WO2023065410A1

WO2023065410A1 - Semiconductor structure bonding method, and semiconductor device

Info

Publication number: WO2023065410A1
Application number: PCT/CN2021/129242
Authority: WO
Inventors: 任小亮
Original assignee: 长鑫存储技术有限公司
Priority date: 2021-10-18
Filing date: 2021-11-08
Publication date: 2023-04-27
Also published as: CN113972143A

Abstract

Disclosed are a semiconductor structure bonding method, and a semiconductor device, which relate to the technical field of semiconductors. The semiconductor structure bonding method comprises: providing a first semiconductor structure with a first surface and a second surface that are opposite to each other; processing the first surface or the second surface to form at least one first element having a first bonding surface; expanding the first semiconductor structure; providing a second semiconductor structure with a second bonding surface; overturning the entire first semiconductor structure; aligning the first bonding surface and the second bonding surface; and completing the bonding process.

Description

Bonding method of semiconductor structure and semiconductor device

This disclosure is based on the Chinese patent application with the application number 202111210755.0, the application date is October 18, 2021, and the application name is "bonding method of semiconductor structure and semiconductor equipment", and claims the priority of the Chinese patent application. The entire content of the patent application is hereby incorporated by reference into this disclosure.

technical field

The present disclosure relates to, but is not limited to, a bonding method of a semiconductor structure and a semiconductor device.

Background technique

During the semiconductor manufacturing process, it is usually necessary to perform various processes on each surface of the semiconductor structure. With the development of the semiconductor industry, the requirements for the integration and function of the semiconductor structure are getting higher and higher. Packaging technology plays an increasingly important role in semiconductor products. In the internal structure of electronic equipment, the density of semiconductor structures such as chips and functional components continues to increase, while the critical dimensions of devices continue to decrease, which brings great challenges to the semiconductor packaging industry.

During the packaging process of the semiconductor structure, the semiconductor structure with the bonding surface will be turned over many times, which will inevitably cause the bonding surface of the semiconductor structure to be polluted, reducing the bonding efficiency and bonding quality of the semiconductor structure.

Contents of the invention

The following is an overview of the subject matter described in detail in this disclosure. This summary is not intended to limit the scope of the claims.

The present disclosure provides a bonding method of a semiconductor structure and a semiconductor device.

A first aspect of an embodiment of the present disclosure provides a method for bonding a semiconductor structure, including:

providing a first semiconductor structure having oppositely disposed first and second sides;

processing the first surface or the second surface so that at least one first monomer is formed on the first surface or the second surface, wherein the first monomer has a first bonding surface ;

performing wafer expansion on the first semiconductor structure;

providing a second semiconductor structure having at least one second monomer having a second bonding surface, the second semiconductor structure being immobilized;

Flipping the first semiconductor structure as a whole, so that the first bonding surface of the at least one first monomer is opposite to the second bonding surface of the at least one second monomer;

performing an alignment process on the at least one first monomer and the at least one second monomer to align the first bonding surface with the second bonding surface;

The first bonding surface is bonded to the second bonding surface.

According to some embodiments of the present disclosure, turning the first semiconductor structure over so that the first bonding surface is opposite to the second bonding surface includes:

Taking any central axis of the first semiconductor structure as a rotation axis, the first semiconductor structure is rotated by a first preset angle so that the first bonding surface is opposite to the second bonding surface;

or,

The first semiconductor structure has a curved edge, and any edge tangent of the first semiconductor structure, or a parallel line parallel to the edge tangent is used as a flip axis, and the first semiconductor structure is completely flipped over the second preset. An angle is set so that the first bonding surface is opposite to the second bonding surface.

According to some embodiments of the present disclosure, performing the alignment process on the first semiconductor structure and the second semiconductor structure includes:

Acquiring a first center point and a first mark of the first monomer;

obtaining a second center point and a second mark of the second monomer;

The first center point coincides with the second center point, and the first mark coincides with the second mark.

According to some embodiments of the present disclosure, obtaining the first center point and the first mark of the first monomer includes:

Perform a first marking process on the first bonding surface, wherein the first marking process includes adding a first marking point and a second marking point on the first bonding surface, the first marking point The shape of the second marking point is different from that of the second marking point, and the first marking point and the second marking point are arranged diagonally;

Obtaining the second center point and the second mark of the second monomer includes:

Perform a second marking process on the second bonding surface, wherein the second marking process includes adding a third marking point and a fourth marking point on the second bonding surface, the third marking point The shape of is different from that of the fourth marking point, and the third marking point and the fourth marking point are arranged diagonally.

According to some embodiments of the present disclosure, the first monomer is square, the number of the first marking point is one, and the number of the second marking point is an odd number greater than or equal to 1;

Performing the first marking process on the first bonding surface includes:

arranging the first marking point at one of the apex corners of the first bonding surface, and arranging an odd number of the second marking points at a plurality of apexes of the first bonding surface at the remaining top corners of the corner;

Wherein, a first virtual connection line is formed between the first marking point and the second marking point at the corner opposite to it, and a second virtual connection line is formed between the remaining second marking points , the intersection of the first virtual connection and the second virtual connection forms the first central point;

The second monomer is square, and the number of the third marking point and the number of the fourth marking point are both one;

Performing the second marking process on the second bonding surface includes:

arranging the third marking point at a vertex among the plurality of vertex corners of the second bonding surface, and the fourth marking point is arranged at a vertex opposite to the third marking point place;

Wherein, a third virtual connection line is formed between the third marking point and the fourth marking point, and the midpoint of the third virtual connection line is the second center point.

According to some embodiments of the present disclosure, processing the first surface or the second surface includes:

performing sawing on the first surface or the second surface to form the at least one first monomer on the first surface or the second surface, wherein the top of the first monomer A surface forms the first bonding surface.

According to some embodiments of the present disclosure, the bonding method of the semiconductor structure further includes:

Irradiating UV rays to the side of the first semiconductor structure away from the first bonding plane.

According to some embodiments of the present disclosure, the bonding connection between the first bonding surface and the second bonding surface includes:

pushing out the at least one first unit by a predetermined distance, and abutting against the second unit aligned therewith;

A mixed bonding connection is performed on the first bonding surface of the first monomer and the second bonding surface of the second monomer.

A second aspect of the embodiments of the present disclosure provides a semiconductor device, including:

The bearing platform, the fixing component is arranged on the bearing platform, and the fixing component is used to fix the first semiconductor structure on the bearing platform, and the second semiconductor structure is fixed on the side of the bearing platform, wherein the The first semiconductor structure has a first face and a second face disposed opposite to each other;

a processing component, configured to process the first surface or the second surface of the first semiconductor structure, so that at least one first monomer is formed on the first surface or the second surface;

An overturning component, connected to the carrying platform, is used to turn over the carrying platform as a whole, so as to turn over the first semiconductor structure as a whole;

an alignment component for aligning the first bonding surface of the at least one first monomer with the second bonding surface of the at least one second monomer of the second semiconductor structure;

The probe assembly is used to realize the bonding connection between the first bonding surface and the second bonding surface.

According to some embodiments of the present disclosure, the fixing assembly includes a fixing ring and a fixing film, the fixing ring is detachably connected to the carrying platform, and the fixing film is attached to the fixing ring for The first semiconductor structure is fixed on the fixing ring.

According to some embodiments of the present disclosure, the first surface or the second surface of the first semiconductor structure is provided with a plurality of criss-crossing dicing lines;

The processing assembly includes a dicing machine that saws the first semiconductor structure along the dicing lane to form the at least one first monomer on the first face or the second face .

According to some embodiments of the present disclosure, the turning assembly includes a first manipulator, and the first manipulator is connected to the carrying platform.

According to some embodiments of the present disclosure, the alignment assembly includes a second manipulator and an observation device, the second manipulator is disposed at the edge of the carrying platform, and the observation device is disposed at the working end of the second manipulator .

According to some embodiments of the present disclosure, the probe assembly includes a probe base and a probe, the probe base is disposed at the working end of the second manipulator, the probe base is disposed close to the observation device, wherein , there are a plurality of probes, and the probes are arranged inside the probe seat, and the probes can move along the axial direction of the probe seat to push the first monomer to move for a predetermined time. distance, so that the first bonding surface is attached to the second bonding surface.

According to some embodiments of the present disclosure, the probe base includes an electrostatic chuck, a plurality of the probes are located in the electrostatic chuck, and one end of the probes can protrude to the outside of the electrostatic chuck.

According to some embodiments of the present disclosure, the probe base includes a probe base body, the probe base body has a working surface, the working surface is provided with an adsorption area, and the adsorption area communicates with the negative pressure device;

Wherein, a plurality of the probes are located inside the probe holder body, and one end of the probes can pass through the adsorption area.

The details of one or more embodiments of the disclosure are set forth in the accompanying drawings and the description below. Other features and advantages of the disclosure will be apparent from the description, drawings, and claims.

Description of drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and, together with the description, serve to explain principles of the embodiments of the disclosure. In the drawings, like reference numerals are used to denote like elements. The drawings in the following description are some, but not all, embodiments of the present disclosure. Those skilled in the art can obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a flow chart of a bonding method for a semiconductor structure according to an exemplary embodiment.

Fig. 2 is a schematic diagram of a bonding method for a semiconductor structure according to an exemplary embodiment.

Fig. 3 is a schematic diagram of a fixing manner of a first semiconductor structure in a method for bonding semiconductor structures according to an exemplary embodiment.

Fig. 4 is a schematic diagram of irradiating a sawn first semiconductor structure with UV rays in a bonding method of semiconductor structures according to an exemplary embodiment.

Fig. 5 is a schematic diagram of performing wafer expansion on a first semiconductor structure in a bonding method for semiconductor structures according to an exemplary embodiment.

FIG. 6 is a schematic view of FIG. 5 in a plan view direction.

Fig. 7 is a schematic diagram of performing a first marking process on a first semiconductor structure in a bonding method of semiconductor structures according to an exemplary embodiment.

Fig. 8 is a schematic diagram showing an alignment process in a bonding method of a semiconductor structure according to an exemplary embodiment.

Fig. 9 is a schematic diagram showing a bonding connection in a bonding method of a semiconductor structure according to an exemplary embodiment.

Fig. 10 is a schematic diagram of a probe assembly in a semiconductor device according to an exemplary embodiment.

Fig. 11 is a schematic diagram of a probe assembly in a semiconductor device according to an exemplary embodiment.

Reference signs:

10. A first semiconductor structure; 20. A second semiconductor structure;

30. Expansion ring; 40. Carrying platform;

50. Probe assembly; 60. Fixed assembly;

70. Processing components; 101. The first side;

102, the second side; 103, the cutting road;

110, the first monomer; 210, the second monomer;

501, probe seat; 502, probe;

601, fixed ring; 602, fixed film;

1101, the first bonding surface; 2101, the second bonding surface;

5011, probe base body; 5012, working surface;

5013. Adsorption area;

A. The first center point; B The second center point;

L1, the first virtual connection; L2, the second virtual connection;

L3, the third virtual connection; L4, the fourth virtual connection;

M, the first marking point; N, the second marking point;

P, the third marking point; Q, the fourth marking point.

Detailed ways

In order to make the purpose, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions in the disclosed embodiments will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments It is a part of the embodiments of the present disclosure, but not all of them. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without making creative efforts belong to the protection scope of the present disclosure. It should be noted that, in the case of no conflict, the embodiments in the present disclosure and the features in the embodiments can be combined arbitrarily with each other.

During the packaging process of the semiconductor structure, the whole wafer is usually cut into a plurality of chips arranged at intervals, and then is adsorbed on the bonding surface of the chip by a transfer device such as a manipulator, so that the chip is separated from the wafer, and then passed through The transfer equipment is turned over many times and then bonded to the semiconductor structure to be bonded. After the semiconductor structure is turned over many times, the bonding surface of the semiconductor structure will inevitably be polluted.

In the semiconductor structure, in order to ensure the reliability and mountability of the bonding of the semiconductor structures, the surface of the bonding surface of the semiconductor structures needs to be cleaned before the bonding of the two semiconductor structures, and each chip needs to be cleaned. As a result, in the subsequent packaging process, especially in the packaging process using a hybrid bonding method, the bonding process is very cumbersome, which reduces the bonding efficiency and bonding quality of the semiconductor structure.

Embodiments of the present disclosure provide a semiconductor structure bonding method and a semiconductor device. By turning over the first semiconductor structure with at least one first monomer as a whole, and then performing the bonding process, the bonding process of the semiconductor structure is greatly reduced. The number of flips in the process avoids the surface contamination of the semiconductor structure caused by multiple flips, thereby effectively improving the bonding quality and bonding efficiency of the semiconductor structure.

An exemplary embodiment of the present disclosure provides a bonding method for a semiconductor structure, as shown in FIG. 1 , and FIG. 1 shows a flow chart of a bonding method for a semiconductor structure provided in an exemplary embodiment according to the present disclosure. , the bonding method of the semiconductor structure will be introduced below with reference to FIGS. 1 to 9 .

This embodiment does not limit the semiconductor structure. The following will introduce the semiconductor structure as a wafer as an example, but this embodiment is not limited to this. The semiconductor structure in this embodiment can also be other structures, such as dynamic random Memory (Dynamic Random Access Memory, DRAM).

As shown in FIG. 1 , an exemplary embodiment of the present disclosure provides a bonding method for a semiconductor structure, including:

Step S100 : providing a first semiconductor structure, the first semiconductor structure has a first surface and a second surface opposite to each other.

Step S200: Processing the first surface or the second surface to form at least one first monomer on the first surface or the second surface, wherein the first monomer has a first bonding surface.

Step S300: Perform wafer expansion on the first semiconductor structure.

Step S400 : providing a second semiconductor structure having at least one second monomer, the second monomer has a second bonding surface, and the second semiconductor structure is fixed.

Step S500: Flip over the first semiconductor structure as a whole, so that the first bonding surface of at least one first monomer is opposite to the second bonding surface of at least one second monomer.

Step S600: performing an alignment process on at least one first monomer and at least one second monomer to align the first bonding surface with the second bonding surface.

Step S700: bonding the first bonding surface and the second bonding surface.

Exemplarily, as shown in FIG. 1 and FIG. 7 , in step S100 , a first semiconductor structure 10 is provided, and the first semiconductor structure 10 has a first surface 101 and a second surface 102 disposed opposite to each other. The first semiconductor structure 10 includes but is not limited to a wafer, wherein the first semiconductor structure 10 may also be a chip or a substrate of semiconductor material. In this embodiment, description is made by taking the first semiconductor structure 10 and the second semiconductor structure 20 as wafers as an example.

Wherein, the wafer may be made of semiconductor material, and the semiconductor material may be one or more of silicon, germanium, silicon-germanium compound, and silicon-oxygen compound.

Referring to FIG. 3 , in step S200 , the first surface 101 of the first semiconductor structure 10 is processed so that at least one first monomer 110 is formed on the first surface 101 . The top surface of the first monomer 110 forms a first bonding surface 1101 .

Alternatively, the second surface 102 of the first semiconductor structure 10 is processed so that at least one first monomer 110 is formed on the second surface 102 . The top surface of the first monomer 110 forms a first bonding surface 1101 . In some embodiments, the first surface 101 or the second surface 102 can be sawed to form at least one first unit 110 on the first surface 101 or the second surface 102, wherein the first unit 110 The top surface forms a first bonding surface 1101 .

Wherein, the formation process of the first monomer 110 can adopt the following method:

On the first surface 101 or the second surface 102 of the first semiconductor structure 10, a plurality of cutting lines 103 arranged alternately in the transverse direction and the vertical direction are designed. Along the same extension direction, the distance between adjacent cutting lines 103 can be the same or Not the same, the distance can be flexibly set according to the design size of the first unit 110 . Then, the first semiconductor structure 10 can be placed on the carrier platform 40 of the semiconductor device, and the first semiconductor structure 10 can be fixed on the carrier platform 40 through the fixing ring 601 and the fixing film 602 . It should be noted that the fixing ring 604 can be an edge ring in a semiconductor device, and the fixing film 602 is made of glue material with adhesiveness, so as to fix the first semiconductor structure 10 on the edge ring. Then use a semiconductor cutting machine to saw along the dicing road 103 to quickly form at least one first monomer 110 on the first surface 101 or the second surface 102 of the first semiconductor structure 10, and cut along the dicing road 103, which can effectively ensure The cutting size of each first monomer 110 .

It should be noted that, referring to FIG. 4, in step S200, after at least one first monomer 110 is formed on the first surface 101 or the second surface 102 of the first semiconductor structure 10, the following steps are further included:

UV rays are irradiated on the side of the first semiconductor structure 10 away from the first bonding surface 1101 to reduce the adhesion between the first monomer 110 and the fixing film, so as to facilitate subsequent expansion of the first semiconductor structure 10 .

Exemplarily, in step S300 , a wafer expansion process is performed on the side of the first semiconductor structure 10 having at least one first monomer 110 . Referring to FIG. 5 and FIG. 6 , the surface of the first semiconductor structure 10 having at least one first monomer 110 may be expanded by a wafer expander. Wherein, the expansion ring 30 in the wafer expansion machine can be press-attached to the edge position on the first semiconductor structure 10 , and the diameter of the expansion ring 30 is smaller than the inner diameter of the fixing ring 601 . Then, lift the fixing ring 601, so that the fixing ring 601 moves upward relative to the expansion ring 30, so that the distance between the adjacent first cells 100 on the first semiconductor structure 10 is increased, which is convenient for the subsequent pairing of the first cells 110. Quasi processing. It should be noted that the first semiconductor structure with multiple first monomers can be expanded first, and then turned over as a whole; it can also be turned over with respect to the first semiconductor structure with multiple first monomers. Afterwards, expand the film.

Wherein, for the first monomer 110 after the expansion process, since the fixing film 602 still has an adhesive effect, after the alignment process, the first monomer 110 is pushed out by the probe assembly 50 by a predetermined position. The distance is such that the first monomer 110 is separated from the fixed film 602 and then attached to the second bonding surface 2101 of the second monomer 210 .

Exemplarily, as shown in FIG. 2 , in step S400 , a second semiconductor structure 20 having at least one second monomer 210 is provided. The second semiconductor structure 20 includes but is not limited to a wafer, wherein the second semiconductor structure 20 can also be a chip or a substrate of semiconductor material. In this embodiment, it is described by taking the second semiconductor structure 20 as a wafer as an example. Wherein, the wafer may be made of semiconductor material, and the semiconductor material may be one or more of silicon, germanium, silicon-germanium compound, and silicon-oxygen compound.

There is a second bonding surface 2101 on the second monomer 210 , and the second bonding surface 2101 may be the top surface of the second monomer 210 . The second semiconductor structure 20 may be fixed in the semiconductor device, so as to be bonded to the flipped first semiconductor structure 10 in a subsequent packaging process.

Referring to FIG. 2 , in step S500, the first semiconductor structure 10 formed with at least one first monomer 110 is turned over as a whole, wherein the edge ring can be turned over as a whole by a manipulator or other equipment in the semiconductor equipment, so as to The first bonding surface 1101 of at least one first monomer 110 on the first semiconductor structure 10 is opposite to the second bonding surface 2101 of at least one second monomer 210 .

It should be noted that, during the overall flipping process of the first semiconductor structure 10, the following methods can be used for flipping:

Taking any central axis of the first semiconductor structure 10 as a rotation axis, the first semiconductor structure 10 is rotated by a first preset angle so that the first bonding surface 1101 is opposite to the second bonding surface 2101 . Wherein, the rotation range of the first preset angle is 0-180°, and the rotation degree of the first preset angle can be flexibly selected according to the fixed position of the second semiconductor structure 20 in the semiconductor device.

Alternatively, the first semiconductor structure 10 can also be turned over as a whole by using the following method:

The first semiconductor structure 10 has a curved edge, and the entire first semiconductor structure 10 is flipped at a second preset angle by taking any edge tangent of the first semiconductor structure 10 as a flip axis. Or, take the parallel line on the first semiconductor structure 10 that is parallel to the edge tangent line as the flip axis, flip the first semiconductor structure as a whole by a second preset angle, so that the first bonding surface 1101 of at least one first monomer 110 It is opposite to the second bonding surface 2101 of the at least one second monomer 210 . Wherein, the rotation range of the second preset angle is 0-180°, and the rotation degree of the second preset angle can be flexibly selected according to the fixed position of the second semiconductor structure 20 in the semiconductor device.

Exemplarily, as shown in FIG. 8 , in step S600 , an alignment process is performed on at least one first monomer 110 and at least one second monomer 210 disposed opposite to each other. It should be noted that when the dimensions of the plurality of first monomers 110 in the first semiconductor structure 10 are the same as the dimensions of the plurality of second monomers 210 in the second semiconductor structure 20, only the first semiconductor The structure 10 and the second semiconductor structure 20 undergo an alignment process. And when the standard size of the first monomer 110 is different from the standard size of the second monomer 210, each first monomer 110 and the corresponding second monomer 210 need to be aligned before being bonded. deal with.

Wherein, the following method can be used for alignment between the first monomer 110 and the second monomer 210:

The first center point A and the first mark of the first unit 110 are obtained. Wherein, before obtaining the first center point A and the first mark of the first monomer 110 , the first marking process is performed on the first bonding surface 1101 of the first monomer 110 . In this embodiment, the first marking process includes adding a first marking point M and a second marking point N on the first bonding surface 1101 . Wherein, the shapes of the first marking point M and the second marking point N are different, and the first marking point M and the second marking point N are diagonally arranged.

In some embodiments, each first unit 110 is square, for example, the shape of the first unit 110 is square or rectangular.

The number of the first marking point M is one, and the number of the second marking point N is an odd number greater than or equal to 1. For example, the number of the second marking point may be 1 or 3. In one embodiment, the number of the first marking point M is 1, and the shape of the first marking point M is T-shaped; the number of the second marking point N is 3, and the shape of the second marking point N is marked It is cross-shaped.

The first marking point M is arranged at one of the multiple vertex corners of the first bonding surface 1101 on the first monomer 110, and an odd number of second marking points N are arranged on multiple corners of the first bonding surface 1101. the rest of the corners. That is to say, the first marking point M and one of the second marking points N are arranged diagonally at both ends of one of the diagonal lines of the square first unit 110, and a second marking point is formed between the two marking points. A virtual connection line L1, the other two second marking points N are set at the two ends of another diagonal line, and a second virtual connection line L2 is formed between the two marking points, so that on the first cell 110 A first center point A is formed on the surface of the bonding surface 1101 , that is, the first center point A is formed by the intersection of the first virtual line L1 and the second virtual line L2 .

It should be noted that, in yet another embodiment, the first marking point M and the second marking point N on the first bonding surface 1101 on the first monomer 110 are both one, wherein the first marking point M and the The second marking points N are arranged symmetrically along the same straight line, and the straight line passes through the central point of the square first unit 110 . At this time, a fourth virtual link L4 is formed between the first marking point M and the second marking point N, and the center of the fourth virtual link L4 is the first central point A.

After completing the first marking process on the first unit 110 and the second marking process on the second unit 210, use a high-speed camera to obtain and record the first center point A, and obtain the first virtual line L1 and the second The virtual connection L2, wherein the first symbol includes the first virtual connection L1 and the second virtual connection L2, or the first symbol includes the fourth virtual connection L4.

A second center point and a second mark of the second monomer 210 are acquired. Wherein, before obtaining the second center point B and the second mark of the second monomer 210, the second marking process is performed on the second bonding surface 2101 of the second monomer 210 first. In this embodiment, the second marking process includes adding a third marking point P and a fourth marking point Q on the second bonding surface 2101 . Wherein, the shapes of the third marking point P and the fourth marking point Q are different, and the third marking point P and the fourth marking point Q are diagonally arranged.

In some embodiments, each second unit 210 is square, for example, the second unit 210 is square or rectangular.

The number of the third marking point P and the number of the fourth marking point Q are both one, wherein, the shape marking the third marking point P is T-shaped, and the shape marking the fourth marking point Q is cross-shaped. The third marking point P is arranged at one of the apex corners of the second bonding surface 2101 of the second monomer 210, and the fourth marking point Q is arranged on the second bonding surface 2101 with the third marking point Point P is at the top corner of the diagonal. A third virtual link L3 is formed between the third marking point P and the fourth marking point Q. At this time, the midpoint of the third virtual line L3 is the second center point B. It should be noted that after the size of the second unit 210 is determined, the arrangement of the third marking point P and the fourth marking point Q After the position is also determined, the length of the third virtual connection L3 and its center point can be quickly determined. The positions of the third virtual connection L3 and its center point can be pre-stored in the control system of the semiconductor device, or can be It was captured and recorded by a high-speed camera. Wherein, the second mark includes a third virtual line L3.

After obtaining the first center point A and the second center point B, as well as the first mark and the second mark, adjust the relative position between the first semiconductor structure 10 and the second semiconductor structure 20 through a device such as a manipulator in the semiconductor device , make the first center point A coincide with the second center point B, and make the third virtual line L3 coincide with the first virtual line L1, or make the third virtual line L3 coincide with the second virtual line L2, Thus, the alignment between the first monomer 110 and the second monomer 210 is quickly completed.

Wherein, the second flag includes a third virtual line L3.

In some embodiments, when there is a fourth dummy line L4 on the first bonding surface 1101 of the first monomer 110, during the alignment process of the first monomer 110 and the second monomer 210, the first The position of the monomer 110 is such that the first central point A on the first bonding surface 1101 of the first monomer 110 coincides with the second central point B on the second bonding surface 2101 of the second monomer 210, and at the same time, The rotation angle of the first unit 110 is adjusted, so that the alignment between the first unit 110 and the second unit 210 is completed quickly.

In this embodiment, by setting marking points in the first unit 110 and the second unit 210, and using the coincidence of the center point and the coincidence of the virtual line, the first unit 110 and the second unit can be quickly realized. The precise alignment between 210 improves the bonding quality in subsequent processes.

Exemplarily, as shown in FIG. 9, in step S700, when at least one first monomer 110 and at least one second monomer 210 are aligned, one of the first monomers 110 is pushed out a predetermined distance, so that the second A unit 110 is detached from the fixing film 602, and the first unit 110 is brought into abutment with the second unit 210 aligned therewith.

Then, hybrid bonding is performed on the first bonding surface 1101 of the first monomer 110 and the second bonding surface 2101 of the second monomer 210 aligned therewith. Among them, hybrid bonding is a direct bonding technique, e.g., forming a bond between surfaces without using an intermediate layer (e.g., solder or adhesive), and can simultaneously achieve metal-metal bonding and Dielectric-dielectric bonding.

It should be noted that, in some embodiments, a separate metal-metal bonding between the first monomer 110 and the second monomer 210 may also be performed; or, it may also be the first monomer 110 and the second monomer A separate dielectric-dielectric bonding is performed between the two monomers 210 .

In the bonding method of the semiconductor structure in this embodiment, the first semiconductor structure having at least one first monomer is turned over as a whole, and then the first monomer is directly bonded to the second semiconductor structure, eliminating the need to The process of separately separating and transporting the first monomer from the first semiconductor structure avoids the surface contamination of the bonding surface of the semiconductor structure caused by multiple flips, thereby effectively improving the bonding quality and bonding efficiency of the semiconductor structure .

An exemplary embodiment of the present disclosure also provides a semiconductor device. The semiconductor device includes a carrier 40 , a processing component 70 , a turning component (not shown in the figure), an alignment component (not shown in the figure) and a probe component 50 .

Wherein, a fixing component 60 is disposed on the carrier platform 40 , and the fixing component 60 is used for fixing the first semiconductor structure 10 on the carrier platform 40 . The second semiconductor structure 20 to be bonded is fixed on the side of the carrying platform 40 . Wherein, the first semiconductor structure 10 has a first surface 101 and a second surface 102 oppositely disposed.

The processing component 70 is used to process the first surface 101 or the second surface 102 of the first semiconductor structure 10, so as to form at least one first unit 110 on the first surface 101 or the second surface 102, wherein the first unit The top surface of the body 110 forms a first bonding surface 1101 .

The overturning component is connected with the carrying platform 40 and is used for turning over the carrying platform 40 as a whole, so as to turn over the first semiconductor structure 10 as a whole.

The alignment component is used for aligning the first bonding surface 1101 of the at least one first monomer 110 and the second bonding surface 2101 of the at least one second monomer 210 of the second semiconductor structure 20 . Wherein, the alignment processing process performed by the alignment component may refer to the alignment processing process in step S600 above.

The probe assembly 50 is used to realize the bonding connection between the first bonding surface 1101 and the second bonding surface 1201 . It should be noted that the bonding connection methods include hybrid bonding, metal-metal bonding and dielectric-dielectric bonding.

As shown in FIGS. 3 and 4 , in some embodiments, the fixing component 60 includes a fixing ring 601 and a fixing film 602 . The fixing ring 601 is detachably connected to the carrying platform 40 . The fixing film 602 is pasted on the fixing ring 601 for fixing the first semiconductor structure 10 on the fixing ring.

Wherein, the fixing ring 601 may adopt an edge ring in a semiconductor device. The fixing film 602 is made of glue material, such as chip tape. The first surface 101 or the second surface 102 of the first semiconductor structure 10 is adhered to the fixing film 602 . Using the fixing ring 601 and the fixing film 602 can quickly and accurately fix the first semiconductor structure 10, improve the stability of the subsequent sawing process of the first semiconductor structure 10, and effectively ensure the sawing of the first semiconductor structure 10 precision.

Referring to FIG. 2 and FIG. 3, in some embodiments, the processing component 70 includes a cutting machine, then the formation process of at least one first monomer 110 on the first semiconductor structure 10 can adopt the following method:

On the first surface 101 or the second surface 102 of the first semiconductor structure 10 are provided a plurality of criss-crossing dicing lines 103 .

Then, the first semiconductor structure 10 is sawed along the cutting line 103 by a cutting machine, so as to form at least one first monomer 110 on the first surface 101 or the second surface 102 . By pre-designing the cutting line 103 on the first surface 101 or the second surface 102 and cutting with a cutting machine to form the first unit 110 , the operation is simple and the cutting size of each first unit 110 can be effectively guaranteed.

In some embodiments, the turning assembly includes a first manipulator connected to the carrying platform 40 . The first manipulator turns over the carrying platform 40 as a whole, so as to realize the whole turning over of the first semiconductor structure 10 .

Through the first manipulator, the flipping accuracy of the first semiconductor structure 10 can be effectively guaranteed, and the accuracy in the subsequent alignment process can be improved, thereby improving the bonding quality of the semiconductor structure.

In some embodiments, the alignment assembly includes a second manipulator and a viewing device. The second manipulator is arranged at the edge of the carrying platform 40, and is used to align the first bonding surface 1101 of at least one first monomer 110 with the second bonding surface 2101 of at least one second monomer 210 of the second semiconductor structure 20. Alignment processing is performed. The observation device is arranged at the working end of the second manipulator, wherein the observation device may include a high-speed camera for acquiring the first center point A of the first semiconductor structure 10, the first virtual line L1 and the second virtual line L2, and The second central point B and the third virtual connection line L3 of the second semiconductor structure 20 are obtained. Using the second manipulator to cooperate with the observation device, the first center point A coincides with the second center point B, and the third virtual line L3 coincides with the first virtual line L1 or the second virtual line L2. Therefore, the alignment between the first monomer 110 and the second monomer 210 can be quickly realized, the alignment accuracy of the semiconductor structure can be improved, and the bonding quality and bonding efficiency of the semiconductor structure can be improved.

As shown in FIGS. 10 and 11 , in some embodiments, the probe assembly 50 includes a probe base 501 and a probe 502 . The probe base 501 is set at the working end of the second manipulator and is set close to the observation device. There are multiple probes 502 , and they are arranged inside the probe holder 501 . Wherein, the probe 502 can move along the axial direction of the probe base 501 to push the first monomer 110 to move a predetermined distance, so that the first bonding surface 1101 of the first monomer 110 is attached to the surface of the second monomer 210. on the second bonding surface 2101 .

In one embodiment, as shown in FIG. 10 , the probe base 501 includes an electrostatic chuck, and a plurality of probes 502 are located in the electrostatic chuck, wherein one end of the probes 502 can protrude to the outside of the electrostatic chuck. Wherein, the electrostatic chuck has an adsorption function, and can absorb the side of the first monomer 110 facing away from the first bonding surface 1101, so as to prevent the position shift of the first monomer 110 after the alignment process, and then, multiple probes The needle 502 is slowly ejected from the electrostatic chuck, and along the ejection direction of the first monomer 110, the position difference between the first monomer 110 and the surrounding first monomers is formed, so that the first monomer 110 of the first monomer 110 A bonding surface 1101 is attached to a second bonding surface 2101 opposite to it. Then, a mixed bonding treatment is performed to bond the first monomer 110 and the second monomer 210 .

In one embodiment, as shown in FIG. 11 , the probe base 501 includes a probe base body 5011, the probe base body 5011 has a working surface 5012, an adsorption region 5013 is arranged on the working surface 5012, the adsorption region 5013 and the negative pressure device connected. By setting the adsorption region 5013 on the probe base body 5011 , the side of the first monomer 110 away from the first bonding surface 1101 can be adsorbed, preventing the position displacement of the first monomer 110 after the alignment process.

Wherein, a plurality of probes 502 are located inside the probe holder body 5011, and one end of the probes 502 can pass through the adsorption area 5013, along the ejection direction of the first monomer 110, make the first monomer 110 and its surroundings The first monomer forms a position difference, so that the first bonding surface 1101 of the first monomer 110 is bonded to the second bonding surface 2101 opposite thereto. Then, a mixed bonding treatment is performed to bond the first monomer 110 and the second monomer 210 .

In the semiconductor device of this embodiment, the first semiconductor structure forming at least one first unit is turned over as a whole, and then the first unit and the second unit are aligned, and then the probe assembly is used to make the first unit One bonding surface and the second bonding surface opposite to it are mixed and bonded, which saves the process of separately separating and transporting the first monomer from the first semiconductor structure, and avoids the semiconductor structure caused by multiple flipping. The surface contamination of the bonding surface can effectively improve the bonding quality and bonding efficiency of the semiconductor structure.

In the description of this specification, descriptions with reference to the terms "embodiments", "exemplary embodiments", "some implementations", "exemplary implementations", "examples" and the like mean that the descriptions are described in conjunction with the implementations or examples. A specific feature, structure, material, or characteristic is included in at least one embodiment or example of the present disclosure.

In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the described specific features, structures, materials or characteristics may be combined in any suitable manner in any one or more embodiments or examples.

In the description of the present disclosure, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated top or positional relationship is based on the top or positional relationship shown in the drawings, and is only for the convenience of describing the present disclosure and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific top, use a specific top construction and operation are therefore not to be construed as limitations on the present disclosure.

It can be understood that the terms "first", "second" and the like used in the present disclosure can be used to describe various structures in the present disclosure, but these structures are not limited by these terms. These terms are only used to distinguish one structure from another.

In one or more drawings, like elements are indicated with like reference numerals. For the sake of clarity, various parts in the drawings are not drawn to scale. Also, some well-known parts may not be shown. For simplicity, the structure obtained after several steps can be described in one figure. In the following, many specific details of the present disclosure, such as structures, materials, dimensions, processing techniques and techniques of devices, are described for a clearer understanding of the present disclosure. However, as will be understood by those skilled in the art, the present disclosure may be practiced without these specific details.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present disclosure, not to limit them; although the present disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still Modifications are made to the technical solutions described in the foregoing embodiments, or equivalent replacements are made to some or all of the technical features; these modifications or replacements do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the various embodiments of the present invention.

Industrial Applicability

In the semiconductor structure bonding method and semiconductor device provided by the embodiments of the present disclosure, the first semiconductor structure with at least one first monomer is turned over as a whole, and then the bonding process is performed, which greatly reduces the bonding of the semiconductor structure. The number of flips in the process avoids the surface contamination of the semiconductor structure caused by multiple flips, thereby effectively improving the bonding quality and bonding efficiency of the semiconductor structure.

Claims

A bonding method for a semiconductor structure, comprising:

providing a first semiconductor structure having oppositely disposed first and second sides;

processing the first surface or the second surface so that at least one first monomer is formed on the first surface or the second surface, wherein the first monomer has a first bonding surface ;

performing wafer expansion on the first semiconductor structure;

providing a second semiconductor structure having at least one second monomer having a second bonding surface, the second semiconductor structure being immobilized;

Flipping the first semiconductor structure as a whole, so that the first bonding surface of the at least one first monomer is opposite to the second bonding surface of the at least one second monomer;

performing an alignment process on the at least one first monomer and the at least one second monomer to align the first bonding surface with the second bonding surface;

The first bonding surface is bonded to the second bonding surface.
The bonding method of a semiconductor structure according to claim 1, wherein, in flipping the first semiconductor structure as a whole, so that the first bonding surface is opposite to the second bonding surface, comprising:

Taking any central axis of the first semiconductor structure as a rotation axis, the first semiconductor structure is rotated by a first preset angle so that the first bonding surface is opposite to the second bonding surface;

or,

The first semiconductor structure has a curved edge, and any edge tangent of the first semiconductor structure, or a parallel line parallel to the edge tangent is used as a flip axis, and the first semiconductor structure is completely flipped over the second preset. An angle is set so that the first bonding surface is opposite to the second bonding surface.
The bonding method of a semiconductor structure according to claim 1, wherein, in performing alignment processing on the first semiconductor structure and the second semiconductor structure, comprising:

Acquiring a first center point and a first mark of the first monomer;

obtaining a second center point and a second mark of the second monomer;

The first center point coincides with the second center point, and the first mark coincides with the second mark.
The bonding method of a semiconductor structure according to claim 3, wherein, in obtaining the first center point and the first mark of the first monomer, comprising:

Perform a first marking process on the first bonding surface, wherein the first marking process includes adding a first marking point and a second marking point on the first bonding surface, the first marking point The shape of the second marking point is different from that of the second marking point, and the first marking point and the second marking point are arranged diagonally;

Obtaining the second center point and the second mark of the second monomer includes:

Perform a second marking process on the second bonding surface, wherein the second marking process includes adding a third marking point and a fourth marking point on the second bonding surface, the third marking point The shape of is different from that of the fourth marking point, and the third marking point and the fourth marking point are arranged diagonally.
The method for bonding a semiconductor structure according to claim 4, wherein the first monomer is square, the number of the first marking point is one, and the number of the second marking point is greater than or equal to 1 an odd number of

Performing the first marking process on the first bonding surface includes:

arranging the first marking point at one of the apex corners of the first bonding surface, and arranging an odd number of the second marking points at a plurality of apexes of the first bonding surface at the remaining top corners of the corner;

Wherein, a first virtual connection line is formed between the first marking point and the second marking point at the corner opposite to it, and a second virtual connection line is formed between the remaining second marking points , the intersection of the first virtual connection and the second virtual connection forms the first central point;

The second monomer is square, and the number of the third marking point and the number of the fourth marking point are both one;

Performing the second marking process on the second bonding surface includes:

arranging the third marking point at a vertex among the plurality of vertex corners of the second bonding surface, and the fourth marking point is arranged at a vertex opposite to the third marking point place;

Wherein, a third virtual connection line is formed between the third marking point and the fourth marking point, and the midpoint of the third virtual connection line is the second central point.
The bonding method of a semiconductor structure according to claim 1, wherein, processing the first surface or the second surface includes:

performing sawing on the first surface or the second surface to form the at least one first monomer on the first surface or the second surface, wherein the top of the first monomer A surface forms the first bonding surface.
The bonding method of a semiconductor structure according to claim 1, wherein the bonding method of the semiconductor structure further comprises:

Irradiating UV rays to the side of the first semiconductor structure away from the first bonding plane.
The bonding method of a semiconductor structure according to any one of claims 1-7, wherein, in the bonding connection between the first bonding surface and the second bonding surface, comprising:

pushing out the at least one first unit by a predetermined distance, and abutting against the second unit aligned therewith;

A mixed bonding connection is performed on the first bonding surface of the first monomer and the second bonding surface of the second monomer.
A semiconductor device comprising:

The bearing platform, the fixing component is arranged on the bearing platform, and the fixing component is used to fix the first semiconductor structure on the bearing platform, and the second semiconductor structure is fixed on the side of the bearing platform, wherein the The first semiconductor structure has a first face and a second face disposed opposite to each other;

a processing component, configured to process the first surface or the second surface of the first semiconductor structure, so that at least one first monomer is formed on the first surface or the second surface;

An overturning component, connected to the carrying platform, is used to turn over the carrying platform as a whole, so as to turn over the first semiconductor structure as a whole;

an alignment component for aligning the first bonding surface of the at least one first monomer with the second bonding surface of the at least one second monomer of the second semiconductor structure;

The probe assembly is used to realize the bonding connection between the first bonding surface and the second bonding surface.
The semiconductor device according to claim 9, wherein the fixing assembly comprises a fixing ring and a fixing film, the fixing ring is detachably connected to the carrier platform, and the fixing film is attached to the fixing ring , for fixing the first semiconductor structure on the fixing ring.
The semiconductor device according to claim 9, wherein a plurality of criss-crossing dicing lines are provided on the first surface or the second surface of the first semiconductor structure;

The processing assembly includes a dicing machine that saws the first semiconductor structure along the dicing lane to form the at least one first monomer on the first face or the second face .
The semiconductor device according to claim 9, wherein the turning assembly includes a first manipulator connected to the carrier.
The semiconductor device according to claim 9, wherein the alignment assembly comprises a second manipulator and an observation device, the second manipulator is arranged at the edge of the carrier table, and the observation device is arranged on the second The working end of the manipulator.
The semiconductor device according to claim 13, wherein the probe assembly comprises a probe base and a probe, the probe base is arranged at the working end of the second manipulator, the probe base is close to the observation The device is set, wherein there are multiple probes, and the probes are arranged inside the probe holder, and the probes can move along the axial direction of the probe holder to push the first The monomer moves a predetermined distance, so that the first bonding surface is attached to the second bonding surface.
The semiconductor device according to claim 14, wherein said probe base includes an electrostatic chuck, a plurality of said probes are located in said electrostatic chuck, and one end of said probes can extend to said electrostatic chuck outside of the disk.
The semiconductor device according to claim 14, wherein the probe base includes a probe base body, the probe base body has a working surface, and the working surface is provided with an adsorption area, and the adsorption area and the negative pressure device connectivity;

Wherein, a plurality of the probes are located inside the probe holder body, and one end of the probes can pass through the adsorption area.