WO2023061086A1 - Amplificateur de puissance - Google Patents

Amplificateur de puissance Download PDF

Info

Publication number
WO2023061086A1
WO2023061086A1 PCT/CN2022/116399 CN2022116399W WO2023061086A1 WO 2023061086 A1 WO2023061086 A1 WO 2023061086A1 CN 2022116399 W CN2022116399 W CN 2022116399W WO 2023061086 A1 WO2023061086 A1 WO 2023061086A1
Authority
WO
WIPO (PCT)
Prior art keywords
circuit
stage
amplifying
temperature coefficient
power amplifier
Prior art date
Application number
PCT/CN2022/116399
Other languages
English (en)
Chinese (zh)
Inventor
胡滨
郭嘉帅
Original Assignee
深圳飞骧科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳飞骧科技股份有限公司 filed Critical 深圳飞骧科技股份有限公司
Publication of WO2023061086A1 publication Critical patent/WO2023061086A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only

Definitions

  • the utility model relates to the field of amplifier circuits, in particular to a power amplifier.
  • the power amplifier has assumed an increasingly important role in the radio frequency amplifier circuit module in the mobile communication system.
  • the power amplifier in the related art includes an input matching network circuit, an amplifying circuit module and an output matching network circuit connected in sequence, and the amplifying circuit module includes a driving stage amplifying circuit, an output stage amplifying circuit and a bias circuit.
  • the bias circuit is generally a bias circuit with a traditional negative temperature coefficient, and both the drive stage amplifier circuit and the output stage amplifier circuit are implemented by triode tubes.
  • the power amplifier of the related art adopts a driver stage amplifying circuit and an output stage amplifying circuit of a two-stage structure, and the turn-on voltage of the transistors in the driving stage amplifying circuit and the output stage amplifying circuit increases at low temperatures and decreases at high temperatures.
  • the bias circuit generally uses a traditional negative temperature coefficient bias circuit to match the difference in quiescent current caused by the different turn-on voltages of high and low temperature transistors, but this compensation method cannot be used for high and low temperature gains. The difference is compensated so that the gain of the power amplifier varies greatly with temperature.
  • the utility model proposes a power amplifier whose gain varies with temperature in a small range.
  • an embodiment of the present invention provides a power amplifier, which includes an input matching network circuit, an amplifying circuit module, and an output matching network circuit connected in sequence, and the input matching network circuit is used to connect externally connected
  • the front-stage circuit is impedance-matched with the amplifying circuit module;
  • the amplifying circuit module includes an amplifying stage circuit and a bias circuit, and the biasing circuit is used to adjust the bias voltage of the amplifying stage circuit to realize adjusting the amplifying stage
  • the size of the output gain of the circuit is used to realize its impedance matching with the externally connected rear stage circuit;
  • the amplifier stage circuit includes a driver stage amplifier circuit and an output stage amplifier circuit connected in sequence, and the driver stage amplifier circuit
  • the circuit is used to amplify the signal, and the output stage amplifying circuit is used to amplify the signal;
  • the bias circuit includes a positive temperature coefficient circuit and a negative temperature coefficient circuit, and the positive temperature coefficient circuit is used to generate a first bias with a positive temperature coefficient setting voltage
  • the positive temperature coefficient circuit includes a first current mirror circuit with a positive temperature coefficient, and the positive temperature coefficient circuit outputs the first bias voltage through the first current mirror circuit.
  • the negative temperature coefficient circuit includes a second current mirror circuit with a negative temperature coefficient, and the negative temperature coefficient circuit outputs the second bias voltage through the second current mirror circuit.
  • the amplifying circuit of the driving stage is realized by transistors.
  • the driving stage amplifier circuit is realized by NPN triode.
  • the output-stage amplifying circuit is realized by transistors.
  • the output-stage amplifying circuit is realized by an NPN triode.
  • the amplifying stage circuit further includes a feedback circuit arranged in parallel with the driving stage amplifying circuit, and the feedback circuit is used to adjust the gain of the amplifying stage circuit.
  • the amplifying stage circuit further includes an interstage matching circuit arranged between the driving stage amplifying circuit and the output stage amplifying circuit, and the interstage matching circuit is used to connect the driving stage amplifying circuit and the output stage amplifying circuit
  • the interstage matching circuit is used to connect the driving stage amplifying circuit and the output stage amplifying circuit
  • the power amplifier of the present invention includes a positive temperature coefficient circuit and a negative temperature coefficient circuit by setting a bias circuit, and the positive temperature coefficient circuit outputs the first bias voltage to the driving stage amplifying circuit , so that the gain of the driver-stage amplifying circuit increases as the temperature increases; the negative temperature coefficient circuit outputs the second bias voltage to the output-stage amplifying circuit, so that the output-stage amplifying circuit
  • the gain decreases with increasing temperature. Therefore, the gain of the amplifying stage circuit is the positive temperature coefficient gain of the driving stage amplifying circuit plus the negative temperature coefficient gain of the output stage amplifying circuit. The influence of high and low temperature on the gain of the amplifying stage circuit is reduced. Therefore, the variation range of the gain of the power amplifier of the utility model with temperature is small.
  • Fig. 1 is the circuit structure diagram of the power amplifier of the utility model embodiment one;
  • Fig. 2 is the circuit structural diagram of the amplification stage circuit of the utility model embodiment two;
  • FIG. 3 is a schematic diagram of a gain curve of a power amplifier in the related art
  • Fig. 4 is a schematic diagram of the gain curve of the power amplifier of the present invention.
  • the utility model provides a power amplifier 100 .
  • FIG. 1 is a circuit structure diagram of a power amplifier according to Embodiment 1 of the present invention.
  • the power amplifier 100 includes an input matching network circuit 1, an amplifying circuit module 2 and an output matching network circuit 3 connected in sequence,
  • the input matching network circuit 1 is used for impedance matching the externally connected pre-stage circuit and the amplifying circuit module 2 .
  • the input terminal Pin of the input matching network circuit 1 is used as the signal input terminal of the power amplifier 100 .
  • the amplifier circuit module 2 includes an amplifier stage circuit 21 and a bias circuit 22 .
  • the amplifying stage circuit 21 includes a driving stage amplifying circuit 211 and an output stage amplifying circuit 212 connected in sequence.
  • the driver amplifier circuit 211 is used for amplifying signals.
  • the driving stage amplifying circuit 211 is realized by transistors.
  • the driver amplifier circuit 211 is realized by using an NPN triode.
  • the output stage amplifying circuit 212 is used for amplifying signals.
  • the output stage amplifying circuit 212 is realized by transistors.
  • the output-stage amplifying circuit 212 is realized by using an NPN triode.
  • the bias circuit 22 is used for adjusting the bias voltage of the amplifier circuit 21 so as to adjust the output gain of the amplifier circuit 21 .
  • the bias circuit 22 includes a positive temperature coefficient circuit 221 and a negative temperature coefficient circuit 222 .
  • the positive temperature coefficient circuit 221 is used to generate a first bias voltage VP with a positive temperature coefficient, and output the first bias voltage VP to the input of the driving stage amplifying circuit 211, so that the driving stage The gain of the amplifying circuit 211 increases as the temperature increases.
  • the first bias voltage VP increases as the temperature increases.
  • the positive temperature coefficient circuit 221 includes a first current mirror circuit with a positive temperature coefficient.
  • the positive temperature coefficient circuit 221 outputs the first bias voltage VP through the first current mirror circuit.
  • the negative temperature coefficient circuit 222 is used to generate a second bias voltage VN with a negative temperature coefficient, and output the second bias voltage VN to the input of the output stage amplifying circuit 212, so that the output stage The gain of the amplifying circuit 212 decreases as the temperature increases.
  • the second bias voltage VN decreases as the temperature increases.
  • the negative temperature coefficient circuit 222 includes a second current mirror circuit with a negative temperature coefficient.
  • the negative temperature coefficient circuit 222 outputs the second bias voltage VN through the second current mirror circuit.
  • the output matching network circuit 3 is used to achieve impedance matching with an externally connected subsequent stage circuit.
  • the output terminal Pout of the output matching network circuit 3 is used as the signal output terminal of the power amplifier 100 .
  • the working principle of the power amplifier 100 to reduce the influence of temperature on the gain is as follows:
  • the positive temperature coefficient circuit 221 generates a first bias voltage VP with a positive temperature coefficient, and the first bias voltage VP increases as the temperature rises, so that the gain of the driving stage amplifier circuit 211 increases with temperature. high and increased.
  • the negative temperature coefficient circuit 222 is used to generate a second bias voltage VN with a negative temperature coefficient, and the second bias voltage VN decreases as the temperature rises, so that the gain of the output stage amplifying circuit 212 decreases with temperature increase and decrease.
  • the gain of the amplifying stage circuit 21 is the positive temperature coefficient gain of the driving stage amplifying circuit 211 plus the negative temperature coefficient gain of the output stage amplifying circuit 212, and the two kinds of gains cancel each other out due to the amplitude of high and low temperature changes, thereby increasing The amplitude reduces the influence of high and low temperature on the gain of the amplifier stage circuit 21 . Therefore, the variation range of the gain of the power amplifier 100 of the present invention with temperature is small.
  • Embodiment 2 of the present utility model provides another power amplifier. Please refer to FIG. 2 .
  • FIG. 2 is a circuit structure diagram of an amplifier stage circuit in Embodiment 2 of the present invention.
  • the circuit of the power amplifier of Embodiment 2 is basically the same as that of the power amplifier 100 of Embodiment 1, and the two differences are:
  • the amplifying stage circuit 21A of the power amplifier of the second embodiment also includes a feedback circuit 213 arranged in parallel with the driving stage amplifying circuit 211A and an interstage stage arranged between the driving stage amplifying circuit 211A and the output stage amplifying circuit 212A.
  • matching circuit 214 is arranged in parallel with the driving stage amplifying circuit 211A and an interstage stage arranged between the driving stage amplifying circuit 211A and the output stage amplifying circuit 212A.
  • the feedback circuit 213 is used to adjust the gain of the amplifier circuit 21A. Through the adjustment function of the feedback circuit 213, the gain of the amplifier stage circuit 21A is more stable, and the performance of the amplifier stage circuit 21A is better.
  • the inter-stage matching circuit 214 is used to achieve impedance matching between the driver stage amplifying circuit 211A and the output stage amplifying circuit 212A, so that the signal amplification performance of the amplifying stage circuit 21A is better.
  • a gain test is performed on a power amplifier of related technology and the signal of the output terminal Pout of the power amplifier 100 of the present invention.
  • FIG. 3 is a schematic diagram of a gain curve of a power amplifier in the related art.
  • FIG. 4 is a schematic diagram of the gain curve of the power amplifier of the present invention.
  • the power amplifier of the present invention includes a positive temperature coefficient circuit and a negative temperature coefficient circuit by setting a bias circuit, and the positive temperature coefficient circuit outputs the first bias voltage to the driving stage amplifying circuit , so that the gain of the driver-stage amplifying circuit increases as the temperature increases; the negative temperature coefficient circuit outputs the second bias voltage to the output-stage amplifying circuit, so that the output-stage amplifying circuit
  • the gain decreases with increasing temperature. Therefore, the gain of the amplifying stage circuit is the positive temperature coefficient gain of the driving stage amplifying circuit plus the negative temperature coefficient gain of the output stage amplifying circuit. The influence of high and low temperature on the gain of the amplifying stage circuit is reduced. Therefore, the variation range of the gain of the power amplifier of the utility model with temperature is small.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

Est prévu dans le présent modèle d'utilité un amplificateur de puissance. L'amplificateur de puissance comprend un circuit de réseau d'adaptation d'entrée, un module de circuit d'amplification et un circuit de réseau d'adaptation de sortie, qui sont connectés en séquence. Un circuit d'étage d'amplification comprend un circuit d'amplification d'étage d'attaque et un circuit d'amplification d'étage de sortie, qui sont connectés en séquence. Un circuit de polarisation comprend un circuit à coefficient de température positif et un circuit à coefficient de température négatif, le circuit à coefficient de température positif étant utilisé pour générer une première tension de polarisation qui a un coefficient de température positif et délivrer la première tension de polarisation au circuit d'amplification d'étage d'attaque, de telle sorte qu'un gain du circuit d'amplification d'étage d'attaque augmente avec la montée en température ; la première tension de polarisation augmente avec la montée en température ; le circuit à coefficient de température négatif est utilisé pour générer une seconde tension de polarisation qui a un coefficient de température négatif et délivre la seconde tension de polarisation au circuit d'amplification d'étage de sortie, de telle sorte qu'un gain du circuit d'amplification d'étage de sortie diminue avec la montée de température ; et la seconde tension de polarisation diminue avec la montée en température. L'amplitude d'un gain d'un amplificateur de puissance du présent modèle d'utilité changeant avec la température est faible.
PCT/CN2022/116399 2021-10-15 2022-09-01 Amplificateur de puissance WO2023061086A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202122495185.6U CN216390921U (zh) 2021-10-15 2021-10-15 功率放大器
CN202122495185.6 2021-10-15

Publications (1)

Publication Number Publication Date
WO2023061086A1 true WO2023061086A1 (fr) 2023-04-20

Family

ID=81245432

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2022/116399 WO2023061086A1 (fr) 2021-10-15 2022-09-01 Amplificateur de puissance

Country Status (2)

Country Link
CN (1) CN216390921U (fr)
WO (1) WO2023061086A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN216390921U (zh) * 2021-10-15 2022-04-26 深圳飞骧科技股份有限公司 功率放大器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101656511A (zh) * 2009-09-04 2010-02-24 惠州市正源微电子有限公司 射频功率放大器温度补偿电路
US20180262163A1 (en) * 2017-02-28 2018-09-13 Psemi Corporation Current Mirror Bias Compensation Circuit
US20180262166A1 (en) * 2017-02-28 2018-09-13 Psemi Corporation Positive Temperature Coefficient Bias Compensation Circuit
WO2021169250A1 (fr) * 2020-02-25 2021-09-02 广州慧智微电子有限公司 Circuit amplificateur de puissance radiofréquence et procédé de commande de gain
CN216390921U (zh) * 2021-10-15 2022-04-26 深圳飞骧科技股份有限公司 功率放大器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101656511A (zh) * 2009-09-04 2010-02-24 惠州市正源微电子有限公司 射频功率放大器温度补偿电路
US20180262163A1 (en) * 2017-02-28 2018-09-13 Psemi Corporation Current Mirror Bias Compensation Circuit
US20180262166A1 (en) * 2017-02-28 2018-09-13 Psemi Corporation Positive Temperature Coefficient Bias Compensation Circuit
WO2021169250A1 (fr) * 2020-02-25 2021-09-02 广州慧智微电子有限公司 Circuit amplificateur de puissance radiofréquence et procédé de commande de gain
CN216390921U (zh) * 2021-10-15 2022-04-26 深圳飞骧科技股份有限公司 功率放大器

Also Published As

Publication number Publication date
CN216390921U (zh) 2022-04-26

Similar Documents

Publication Publication Date Title
CN110677132B (zh) 一种射频线性功率放大器电路
US10951183B2 (en) PA output memory neutralization using baseband I/O capacitance current compensation
CN100547909C (zh) 改善线性度和频带的放大器电路
US20090315621A1 (en) Amplifier with gain expansion stage
WO2023061086A1 (fr) Amplificateur de puissance
CN103248330A (zh) 一种高增益精度的可编程增益放大器
CN103840775A (zh) 一种片上实现直流失调消除功能的限幅放大器
CN115603672A (zh) 一种基于可变交叉耦合对的毫米波负载调制平衡放大器
CN114070213A (zh) 运算放大器
CN103346742A (zh) 声光q开关驱动器
CN112468104A (zh) 一种运算放大器
US8952757B2 (en) Amplifiers with enhanced power supply rejection ratio at the output stage
CN111697936B (zh) 一种低功耗互补型数字可变增益放大器
CN116232242A (zh) Ab类输出级的偏置电路以及ab类放大器、芯片和电子设备
WO2018113109A1 (fr) Amplificateur de puissance rf et circuit de commande de gain correspondant
CN114362686A (zh) 一种基于交调对消技术的放大器
CN210157152U (zh) 一种catv信号放大器的电压温漂补偿电路
CN110829984B (zh) 一种高线性度的功率放大器
KR100418180B1 (ko) 선형화기 커패시터를 이용한 전력증폭회로
CN113595515B (zh) 一种应用于射频放大器的高线性偏置电路
CN215990716U (zh) 一种用于驱动级差分放大器的偏置电路
CN115021687B (zh) 运算放大器和电子系统
CN117097323A (zh) 一种宽输出摆幅低失真的模拟缓冲器Buffer电路
CN113258888A (zh) 一种应用于高线性功率放大器的自动调整偏置电路
WO2021120242A1 (fr) Puce de commutation d'alimentation électrique frontale radiofréquence 5g compatible avec modes apt et et

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22880031

Country of ref document: EP

Kind code of ref document: A1