WO2023051121A1 - 基板处理装置 - Google Patents

基板处理装置 Download PDF

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Publication number
WO2023051121A1
WO2023051121A1 PCT/CN2022/115058 CN2022115058W WO2023051121A1 WO 2023051121 A1 WO2023051121 A1 WO 2023051121A1 CN 2022115058 W CN2022115058 W CN 2022115058W WO 2023051121 A1 WO2023051121 A1 WO 2023051121A1
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WO
WIPO (PCT)
Prior art keywords
liquid
temperature
recovery tank
pipeline
chemical liquid
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PCT/CN2022/115058
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English (en)
French (fr)
Inventor
冯浩
王昱琪
徐融
张晓燕
王晖
Original Assignee
盛美半导体设备(上海)股份有限公司
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Priority to JP2024519620A priority Critical patent/JP2024533796A/ja
Priority to KR1020247013959A priority patent/KR20240065167A/ko
Publication of WO2023051121A1 publication Critical patent/WO2023051121A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Definitions

  • the present invention relates to the technical field of semiconductor manufacturing, and more particularly, to a substrate processing device.
  • the conventional substrate cleaning device shown in FIG. 1 includes a liquid supply tank 200', a cleaning chamber 100' and a recovery tank 300'.
  • the liquid supply tank 200' adjusts the temperature of the chemical liquid through its internal circulation line L1' to provide the cleaning chamber with a constant temperature chemical liquid. After the cleaning process is completed, the used chemical liquid will flow back to the recovery tank 300', and then flow back from the recovery tank 300' to the liquid supply tank 200' for recycling. However, the cleaning of the substrate by the chemical liquid in the cleaning chamber 100' and the temporary storage of the liquid in the recovery tank 300' will cause the temperature of the chemical liquid to drop.
  • the chemical liquid in the tank 200' produces a large temperature difference, sometimes up to 20°C, which increases the difficulty of temperature control in the liquid supply tank 200', making the temperature of the chemical liquid supplied to the cleaning chamber 100' lower than the predetermined cleaning temperature, which will eventually lead to The cleaning effect of the substrate becomes poor, which in turn affects the product yield.
  • the object of the present invention is to provide a substrate processing device, which can effectively control the temperature of the chemical liquid and improve the product yield.
  • the substrate processing device provided by the present invention includes:
  • the processing chamber has a liquid inlet and a liquid outlet
  • the liquid supply tank has a first liquid inlet, a second liquid inlet and a liquid outlet;
  • the recovery tank has a first liquid inlet, a second liquid inlet and a liquid outlet;
  • the first pipeline is used to connect the first liquid inlet and the liquid outlet of the liquid supply tank, so that the chemical liquid circulates inside the liquid supply tank;
  • the second pipeline is used to connect the first pipeline and the liquid inlet of the processing chamber, so as to transport the chemical liquid in the liquid supply tank to the processing chamber;
  • the third pipeline is used to connect the first pipeline and the first liquid inlet of the recovery tank, so as to transport the chemical liquid in the liquid supply tank to the recovery tank;
  • the fourth pipeline is used to connect the liquid outlet of the treatment chamber and the second liquid inlet of the recovery tank, so as to return the used chemical liquid in the treatment chamber to the recovery tank;
  • the fifth pipeline is used to connect the liquid outlet of the recovery tank and the second liquid inlet of the liquid supply tank, so as to transport the chemical liquid in the recovery tank back to the liquid supply tank;
  • the temperature of the chemical liquid transported to the recovery tank through the third pipeline is higher than the temperature of the chemical liquid transported to the recovery tank through the fourth pipeline.
  • a first circulating pump, a first heater and a first temperature controller are sequentially arranged on the first pipeline;
  • the first circulating pump is configured to make the chemical liquid flow from the liquid supply tank through the first pipeline and return to the liquid supply tank, so that the chemical liquid circulates inside the liquid supply tank;
  • the first heater is configured to heat the chemical liquid flowing through the first pipeline
  • the first temperature controller is configured to detect the temperature of the chemical liquid and control the start and stop of the first heater, so as to maintain the temperature of the chemical liquid in the liquid supply tank at a preset temperature.
  • the flow rate of the chemical liquid transported to the recovery tank through the third pipeline is not less than the flow rate of the chemical liquid transported to the recovery tank through the fourth pipeline.
  • a heating jacket arranged outside the fourth pipeline is also included.
  • the present invention also includes a second heater and a second temperature controller arranged in the recovery tank, and the second temperature controller controls the start and stop of the second heater to make the temperature in the recovery tank The temperature of the chemical liquid does not exceed the set temperature.
  • the liquid outlet of the recovery tank is located at the bottom of the recovery tank.
  • the present invention also includes a liquid level controller configured in the recovery tank, a second circulating pump configured on the fifth pipeline, and the liquid level controller controls the start and stop of the second circulating pump to Keep the liquid level in the recovery tank from exceeding the preset level.
  • the liquid level controller is set with a first liquid level value and a second liquid level value, and when the liquid level controller detects that the liquid level in the recovery tank exceeds the first liquid level value, The liquid level controller sends an instruction to turn on the second circulation pump, and pumps the chemical liquid in the recovery tank back to the liquid supply tank;
  • the liquid level controller When the liquid level controller detects that the liquid level in the recovery tank is lower than the second liquid level value, the liquid level controller sends an instruction to turn off the second circulation pump, and stops pumping the chemical liquid in the recovery tank back to the liquid supply tank.
  • the fifth pipeline is equipped with a temperature alarm, and the temperature alarm is set with a safe temperature.
  • the temperature alarm detects that the temperature of the chemical liquid in the fifth pipeline exceeds the safe temperature, The temperature alarm sends out an alarm, and the substrate processing device stops working.
  • the safety temperature has an upper limit and a lower limit
  • the upper limit is the substrate processing temperature
  • the lower limit is the critical temperature at which particles agglomerate in the chemical liquid, when the temperature alarm detects
  • the temperature alarm will sound an alarm to remind the substrate processing device to stop working.
  • part of the chemical liquid with a higher temperature in the liquid supply tank is returned to the recovery tank to increase the overall temperature of the chemical liquid in the recovery tank, reduce the temperature fluctuation of the chemical liquid in the process of recycling, and reduce the size of the recovery tank and the supply liquid.
  • the temperature difference of the chemical liquid in the tank can further improve the temperature control accuracy of the liquid supply tank, so that the temperature of the chemical liquid supplied to the processing chamber can be kept constant, a better cleaning effect can be obtained, and the product yield can be improved.
  • FIG. 1 shows a substrate cleaning device in the prior art
  • FIG. 2 shows a substrate processing apparatus according to an embodiment of the present invention.
  • the substrate processing apparatus proposed by the present invention includes a processing chamber 100 , a liquid supply tank 200 and a recovery tank 300 .
  • the processing chamber 100 has a liquid inlet and a liquid outlet for performing liquid processing on the substrate.
  • the processing chamber 100 includes a spin chuck 101 for holding the substrate, a nozzle 102 for spraying the chemical liquid on the surface of the substrate, and a protective cover 103 for preventing the chemical liquid from splashing and collecting the chemical liquid,
  • the liquid inlet of the processing chamber 100 is connected to the nozzle 102 , and the liquid outlet of the processing chamber 100 is located at the bottom of the processing chamber 100 .
  • the processing chamber 100 is a single-wafer cleaning chamber.
  • the liquid supply tank 200 has a first liquid inlet, a second liquid inlet and a liquid outlet for storing chemical liquid and supplying the chemical liquid to the processing chamber 100 .
  • the first liquid inlet and the liquid outlet of the liquid supply tank 200 are connected by a first pipeline L1 to make the chemical liquid circulate inside the liquid supply tank 200 .
  • a first circulation pump 11 , a first heater 12 and a first temperature controller 13 are sequentially arranged along the flow direction of the chemical liquid on the first pipeline L1 , and the first circulation pump 11 is configured to make the chemical liquid flow from the liquid supply tank 200 Return to the liquid supply tank 200 through the first pipeline L1, so that the chemical liquid circulates inside the liquid supply tank 200, the first heater 12 is configured to heat the chemical liquid flowing through the first pipeline L1, and the first temperature controller 13 is configured In order to detect the temperature of the chemical liquid and control the start and stop of the first heater 12, the temperature of the chemical liquid in the liquid supply tank 200 is maintained at a preset temperature.
  • the chemical liquid contained in the liquid supply tank 200 is ST250, which is used to clean the substrate, and the process temperature of the chemical liquid is controlled at 40 ⁇ 0.1°C.
  • the first temperature controller 13 sets the process temperature to 40°C. When the first temperature controller 13 detects that the temperature of the chemical liquid in the liquid supply tank 200 is lower than 40°C, the first temperature controller 13 will send a signal to turn on the first heater. 12, the chemical liquid in the liquid supply tank 200 is circulated and heated. When the first temperature controller 13 detects that the temperature of the chemical liquid in the liquid supply tank 200 is higher than 40°C, the first temperature controller 13 will send a shutdown first An instruction from the heater 12 stops circulating and heating the chemical liquid in the liquid supply tank 200 .
  • the first pipeline L1 is connected to the liquid inlet of the processing chamber 100 through the second pipeline L2, so as to transport the chemical liquid in the liquid supply tank 200 to the processing chamber 100, and the processing chamber 100 sprays the chemical liquid on the substrate through the nozzle 102 to process the substrate. deal with. In practical applications, multiple processing chambers 100 may be provided. Correspondingly, multiple second pipelines L2 are drawn from the first pipeline L1 , and each second pipeline L2 is connected to one processing chamber 100 . After the chemical solution supplied to the processing chamber 100 processes the substrate, the temperature will drop, usually to room temperature, about 26°C.
  • the recovery tank 300 has a first liquid inlet, a second liquid inlet and a liquid outlet.
  • the first pipeline L1 is connected to the first liquid inlet of the recovery tank 300 through the third pipeline L3 to deliver the chemical liquid in the liquid supply tank 200 to the recovery tank 300 .
  • the liquid outlet of the processing chamber 100 is connected to the second liquid inlet of the recovery tank 300 through the fourth pipeline L4 to return the used chemical liquid in the processing chamber 100 to the recovery tank 300.
  • the processing chamber 100 uses The final chemical liquid flows back to the recovery tank 300 through the fourth pipeline L4 by gravity.
  • the recovery tank 300 simultaneously receives the chemical liquid from the liquid supply tank 200 and the chemical liquid from the processing chamber 100, wherein the temperature of the chemical liquid from the liquid supply tank 200 is higher than the temperature of the chemical liquid from the processing chamber 100, and the two are mixed,
  • the overall temperature of the chemical liquid in the recovery tank 300 can be increased, thereby avoiding particle agglomeration caused by the temperature drop of the chemical liquid in the recovery tank 300 to a certain extent.
  • the chemical liquid in the liquid supply tank 200 still flows through the third pipeline L3 through the recovery tank 300 and returns to the liquid supply tank 200, that is, the recovery tank 300 does not matter whether the processing chamber 100 Whether there is chemical liquid flowing back to the recovery tank 300 through the fourth pipeline L4, the recovery tank 300 all participates in the circulation of the chemical liquid, so that the chemical liquid in the recovery tank 300 is not only in a flowing state all the time, but also has a temperature close to the chemical liquid in the liquid supply tank 200. liquid temperature.
  • the flow rate of the chemical liquid transported to the recovery tank 300 through the third pipeline L3 is not less than the flow rate of the chemical liquid transported to the recovery tank 300 through the fourth line L4, that is, the thermal chemical liquid flowing back into the recovery tank 300
  • the flow rate of the liquid is greater than that of the cold chemical liquid, so that the thermal chemical liquid in the liquid supply tank 200 can be used more effectively to heat the cold chemical liquid from the processing chamber 100 .
  • a heating jacket 41 can be provided outside the fourth pipeline L4 to partially compensate for the temperature loss of the chemical liquid when it flows back from the processing chamber 100 to the recovery tank 300, thereby improving the chemical liquid from the treatment chamber 100.
  • the chamber 100 enters the temperature of the recovery tank 300.
  • the heating mantle 41 is set at a temperature of 50°C to 60°C.
  • the recovery tank 300 is equipped with a second heater 301 , a second temperature controller 302 and a liquid level controller 303 .
  • the second temperature controller 302 controls the start and stop of the second heater 301 so that the temperature of the chemical liquid in the recovery tank 300 does not exceed the set temperature.
  • the temperature set by the second temperature controller 302 is 40°C.
  • the liquid outlet of the recovery tank 300 is located at the bottom of the recovery tank 300 and is connected to the liquid supply tank 200 through a fifth pipeline L5.
  • a second circulation pump 51 is provided on the fifth line L5.
  • the liquid level controller 303 configured by the recovery tank 300 controls the start and stop of the second circulating pump 51 so that the liquid level in the recovery tank 300 does not exceed a preset liquid level.
  • the liquid level controller 303 is set with a first liquid level value and a second liquid level value, and when the liquid level in the recovery tank 300 exceeds the first liquid level value, the liquid level controller 300 will send a second loop to start Pump 51 pumps the chemical liquid in the recovery tank 300 back to the liquid supply tank 200; when the liquid level in the recovery tank 300 is lower than the second liquid level value, the liquid level controller 300 will send the second circulating pump to close 51, stop pumping the chemical liquid in the recovery tank 300 back to the liquid supply tank 200, and now the recovery tank 300 is in the process of collecting the chemical liquid.
  • a temperature alarm 52 is also arranged on the fifth pipeline L5, and the temperature alarm 52 is set with a safe temperature.
  • the temperature alarm 52 detects that the temperature of the chemical liquid in the fifth pipeline L5 exceeds the safe temperature, the temperature alarm will 52 gives an alarm, and the substrate processing apparatus stops working.
  • the safe temperature has an upper limit and a lower limit, the upper limit is the substrate processing temperature, and the lower limit is the critical temperature at which particles agglomerate in the chemical liquid.
  • the temperature alarm 52 detects that the temperature of the chemical liquid in the fifth pipeline L5 is higher than the upper limit or lower than the lower limit, the temperature alarm 52 sends out an alarm to remind the substrate processing device to stop working.
  • the safe temperature is 34°C-40°C.
  • the recovery tank 300 not only receives the chemical liquid used in the processing chamber 100, but also receives the unused chemical liquid from the liquid supply tank 200.
  • the two are mixed to increase the temperature of the chemical liquid in the recovery tank 300 and reduce the recovery time.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

本发明揭示一种基板处理装置，包括处理腔、供液槽和回收槽。第一管线连接供液槽的第一进液口与出液口，以使化学液在供液槽内部循环；第二管线连接第一管线和处理腔的进液口，以将供液槽内的化学液输送至处理腔；第三管线连接第一管线和回收槽的第一进液口，以将供液槽内的化学液输送至回收槽；第四管线连接处理腔的出液口和回收槽的第二进液口，以将处理腔内使用后的化学液回流至回收槽；第五管线连接回收槽的出液口和供液槽的第二进液口，以将回收槽内的化学液输送回供液槽；其中，通过第三管线输送至回收槽的化学液温度高于通过第四管线输送至回收槽的化学液温度。

Description

基板处理装置 技术领域
本发明涉及半导体制造技术领域，更具体地，涉及一种基板处理装置。
背景技术
单片清洗设备中，常采用高温化学液对基板清洗，对于某些化学液(例如ST250)，其粘度随温度变化较大，当温度较低时，化学液粘度增大，化学液中颗粒会形成团聚，这将导致基板清洗效果变差。基于上述原因，高温化学液清洗基板时，不仅需要保证供应至基板的化学液温度维持在预定温度，还要保证化学液在整个循环过程中具有较小的温度波动，才能获得较佳的清洗效果。
图1示出的传统基板清洗装置，包括供液槽200’、清洗腔100’和回收槽300’。供液槽200’通过其配置的内循环管线L1’调整化学液的温度，为清洗腔提供温度恒定的化学液。当清洗工艺完成后，使用后的化学液会回流到回收槽300’，再由回收槽300’回流到供液槽200’循环使用。然而，化学液在清洗腔100’内清洗基板以及在回收槽300’暂时存液均会导致化学液温度下降，不仅化学液会因温度下降产生颗粒团聚，还会使得回收槽300’与供液槽200’内化学液产生较大温差，温差有时可达20℃，增加供液槽200’控温难度，使得供应至清洗腔100’的化学液温度低于预定的清洗温度，这些最终都会导致基板清洗效果变差，进而影响产品良率。
发明内容
本发明的目的是提供一种基板处理装置，实现对化学液进行有效控温，提升产品良率。
为实现上述目的，本发明提供的基板处理装置，包括：
处理腔，具有进液口和出液口；
供液槽，具有第一进液口、第二进液口和出液口；
回收槽，具有第一进液口、第二进液口和出液口；
第一管线，用于连接供液槽的第一进液口与出液口，以使化学液在供液槽 内部循环；
第二管线，用于连接第一管线和处理腔的进液口，以将供液槽内的化学液输送至处理腔；
第三管线，用于连接第一管线和回收槽的第一进液口，以将供液槽内的化学液输送至回收槽；
第四管线，用于连接处理腔的出液口和回收槽的第二进液口，以将处理腔内使用后的化学液回流至回收槽；
第五管线，用于连接回收槽的出液口和供液槽的第二进液口，以将回收槽内的化学液输送回供液槽；
其中，通过第三管线输送至回收槽的化学液温度高于通过第四管线输送至回收槽的化学液温度。
作为本发明的一种可选方案，所述第一管线上依次配置有第一循环泵、第一加热器和第一温度控制器；
第一循环泵被配置为使化学液从供液槽流经第一管线返回供液槽，以使化学液在供液槽内部循环；
第一加热器被配置为加热流经第一管线的化学液；
第一温度控制器被配置为检测化学液温度并控制第一加热器的启停，以使供液槽内的化学液温度维持在预设温度。
作为本发明的一种可选方案，经第三管线输送至回收槽的化学液流量不小于经第四管线输送至回收槽的化学液流量。
作为本发明的一种可选方案，还包括配置在所述第四管线外侧的加热套。
作为本发明的一种可选方案，还包括配置在所述回收槽的第二加热器和第二温度控制器，第二温度控制器通过控制第二加热器的启停以使回收槽内的化学液温度不超过设定温度。
作为本发明的一种可选方案，所述回收槽的出液口位于回收槽的底部。
作为本发明的一种可选方案，还包括配置在所述回收槽的液位控制器，配置在第五管线上的第二循环泵，液位控制器通过控制第二循环泵的启停以使回收槽内的液位不超过预设液位。
作为本发明的一种可选方案，液位控制器设定有第一液位值和第二液位值， 当液位控制器检测到回收槽内的液位超过第一液位值时，液位控制器发送开启第二循环泵的指令，将回收槽内的化学液泵送回供液槽；
当液位控制器检测到回收槽内的液位低于第二液位值时，液位控制器发送关闭第二循环泵的指令，停止将回收槽内的化学液泵送回供液槽。
作为本发明的一种可选方案，所述第五管线上配置有温度报警器，温度报警器设定有安全温度，当温度报警器检测到第五管线内的化学液温度超过安全温度时，温度报警器发出警报，基板处理装置停止作业。
作为本发明的一种可选方案，所述安全温度设有上限值和下限值，上限值为基板处理温度，下限值为化学液出现颗粒团聚的临界温度，当温度报警器检测到第五管线内的化学液温度高于上限值或低于下限值时，温度报警器均发出警报，提醒基板处理装置停止作业。
本发明通过将供液槽具有较高温度的化学液部分回流至回收槽，用以提高回收槽内化学液的整体温度，降低化学液在循环使用过程中的温度波动，缩小回收槽与供液槽内化学液的温差，进而提高供液槽的温控精度，从而使得供应至处理腔的化学液温度恒定，获得较佳的清洗效果，提高产品良率。
附图概述
图1示出了现有技术中基板清洗装置；
图2示出了本发明一实施例的基板处理装置。
本发明的较佳实施方式
为详细说明本发明的技术内容、构造特征、所达成目的及效果，下面将结合实施例并配合图式予以详细说明。
参见图2，本发明提出的基板处理装置，包括处理腔100、供液槽200以及回收槽300。处理腔100具有进液口和出液口，用于对基板执行液处理。在一具体实施例中，处理腔100包括用于保持基板的旋转卡盘101，用于向基板表面喷淋化学液的喷嘴102，以及用于防止化学液飞溅并收集化学液的保护罩103，处理腔100的进液口与喷嘴102相连，处理腔100的出液口位于处理腔100底部。在本实施例中，处理腔100为单片清洗腔。
供液槽200具有第一进液口、第二进液口和出液口，用于盛放化学液并向处理腔100供应化学液。供液槽200的第一进液口与出液口由第一管线L1相连，以使化学液在供液槽200内部循环。在第一管线L1上沿化学液流动方向依次配置有第一循环泵11、第一加热器12和第一温度控制器13，第一循环泵11被配置为使化学液从供液槽200流经第一管线L1返回供液槽200，以使化学液在供液槽200内部循环，第一加热器12被配置为加热流经第一管线L1的化学液，第一温度控制器13被配置为检测化学液温度并控制第一加热器12的启停，以使供液槽200内的化学液温度维持在预设温度。在本实施例中，供液槽200内盛放的化学液为ST250，用于对基板进行清洗，化学液的工艺温度控制在40±0.1℃。第一温度控制器13设定工艺温度为40℃，当第一温度控制器13检测到供液槽200内化学液温度低于40℃时，第一温度控制器13将发送开启第一加热器12的指令，对供液槽200内的化学液循环加热，当第一温度控制器13检测到供液槽200内化学液温度高于40℃时，第一温度控制器13将发送关闭第一加热器12的指令，停止对供液槽200内的化学液循环加热。
第一管线L1通过第二管线L2连接处理腔100的进液口，以将供液槽200内的化学液输送至处理腔100，处理腔100通过喷嘴102向基板喷淋化学液以对基板进行处理。实际应用中，处理腔100可以设置有多个，相应地，第一管线L1上引出多条第二管线L2，每条第二管线L2连接一个处理腔100。供应至处理腔100的化学液对基板进行处理后，温度会下降，通常下降至室温，大约在26℃。
回收槽300具有第一进液口、第二进液口和出液口。第一管线L1通过第三管线L3连接回收槽300的第一进液口，以将供液槽200内的化学液输送至回收槽300。处理腔100的出液口通过第四管线L4连接回收槽300的第二进液口，以将处理腔100内使用后的化学液回流至回收槽300，在本实施例中，处理腔100使用后的化学液通过重力经第四管线L4回流至回收槽300。回收槽300内同时接收来自供液槽200的化学液和来自处理腔100的化学液，其中，来自供液槽200的化学液的温度高于来自处理腔100的化学液温度，两者混合，能够提高回收槽300内的化学液整体温度，从而可以一定程度上避免化学液在回收槽300内温度降低产生颗粒团聚的现象。
由于第三管线L3的设置，即使在处理腔100全部停止工作时，供液槽200内的化学液仍然经第三管线L3流经回收槽300返回供液槽200，即回收槽300无论处理腔100是否有化学液经第四管线L4回流至回收槽300，回收槽300均参与化学液的循环，使得回收槽300内的化学液不仅始终处于流动状态，且温度接近供液槽200内的化学液温度。
在一实施例中，经第三管线L3输送至回收槽300的化学液流量不小于经第四管线L4输送至回收槽300的化学液流量，也就是说，回流至回收槽300内的热化学液的流量大于冷化学液的流量，从而能够更有效地利用供液槽200内的热化学液加热来自处理腔100的冷化学液。
为了进一步提升回收槽300内收集的化学液温度，可以在第四管线L4的外侧设置加热套41，部分补偿化学液从处理腔100回流至回收槽300时的温度损失，进而提高化学液由处理腔100进入回收槽300的温度。在本实施例中，加热套41设置温度为50℃～60℃。
在本实施例中，回收槽300配置有第二加热器301、第二温度控制器302和液位控制器303。第二温度控制器302通过控制第二加热器301的启停以使回收槽300内的化学液温度不超过设定温度。在本实施例中，第二温度控制器302设定温度为40℃。
回收槽300的出液口位于回收槽300的底部，并通过第五管线L5连接供液槽200。通过将回收槽300的出液口设置在回收槽300底部，能够避免出现循环死角，从而使得回收槽300内部化学液温度均匀。第五管线L5上设置有第二循环泵51。由回收槽300配置的液位控制器303控制第二循环泵51的启停以使回收槽300内的液位不超过预设液位。具体地，液位控制器303设定有第一液位值和第二液位值，当回收槽300内的液位超过第一液位值时，液位控制器300将发送开启第二循环泵51的指令，将回收槽300内的化学液泵送回供液槽200；当回收槽300内的液位低于第二液位值时，液位控制器300将发送关闭第二循环泵51的指令，停止将回收槽300内的化学液泵送回供液槽200，此时回收槽300处于收集化学液的过程。
此外，在第五管线L5上还配置有温度报警器52，温度报警器52设定有安全温度，当温度报警器52检测到第五管线L5内的化学液温度超过安全温度时， 温度报警器52发出警报，基板处理装置停止作业。安全温度设有上限值和下限值，上限值为基板处理温度，下限值为化学液出现颗粒团聚的临界温度。当温度报警器52检测到第五管线L5内的化学液温度高于上限值或低于下限值时，温度报警器52均发出警报，提醒基板处理装置停止作业。在本实施例中，安全温度为34℃～40℃。
在本发明中，回收槽300不仅接收处理腔100使用过的化学液，同时接收来自供液槽200未使用过的化学液，两者混合，能够提升回收槽300内的化学液温度，缩小回收槽300与供液槽200的化学液温差，处理腔100回流管路外设置加热套，能够减小化学液温度损失，且在回收槽300内设置加热器，能够进一步提高回收槽300内化学液温度，减少化学液整个循环过程中的温度波动，使得供液槽200的温度控制更加容易，使得基板处理装置能够连续作业，并获得较佳的清洗的效果。
综上所述，本发明通过上述实施方式及相关图式说明，己具体、详实的揭露了相关技术，使本领域的技术人员可以据以实施。而以上所述实施例只是用来说明本发明，而不是用来限制本发明的，本发明的权利范围，应由本发明的权利要求来界定。至于本文中所述元件数目的改变或等效元件的代替等仍都应属于本发明的权利范围。

Claims (10)

  1. 一种基板处理装置，其特征在于，包括：
    处理腔，具有进液口和出液口；
    供液槽，具有第一进液口、第二进液口和出液口；
    回收槽，具有第一进液口、第二进液口和出液口；
    第一管线，用于连接供液槽的第一进液口与出液口，以使化学液在供液槽内部循环；
    第二管线，用于连接第一管线和处理腔的进液口，以将供液槽内的化学液输送至处理腔；
    第三管线，用于连接第一管线和回收槽的第一进液口，以将供液槽内的化学液输送至回收槽；
    第四管线，用于连接处理腔的出液口和回收槽的第二进液口，以将处理腔内使用后的化学液回流至回收槽；
    第五管线，用于连接回收槽的出液口和供液槽的第二进液口，以将回收槽内的化学液输送回供液槽；
    其中，通过第三管线输送至回收槽的化学液温度高于通过第四管线输送至回收槽的化学液温度。
  2. 根据权利要求1所述的基板处理装置，其特征在于，所述第一管线上依次配置有第一循环泵、第一加热器和第一温度控制器；
    第一循环泵被配置为使化学液从供液槽流经第一管线返回供液槽，以使化学液在供液槽内部循环；
    第一加热器被配置为加热流经第一管线的化学液；
    第一温度控制器被配置为检测化学液温度并控制第一加热器的启停，以使供液槽内的化学液温度维持在预设温度。
  3. 根据权利要求1所述的基板处理装置，其特征在于，经第三管线输送至回收槽的化学液流量不小于经第四管线输送至回收槽的化学液流量。
  4. 根据权利要求1所述的基板处理装置，其特征在于，还包括配置在所述第四管线外侧的加热套。
  5. 根据权利要求1所述的基板处理装置，其特征在于，还包括配置在所述回收槽的第二加热器和第二温度控制器，第二温度控制器通过控制第二加热器的启停以使回收槽内的化学液温度不超过设定温度。
  6. 根据权利要求1所述的基板处理装置，其特征在于，所述回收槽的出液口位于回收槽的底部。
  7. 根据权利要求1所述的基板处理装置，其特征在于，还包括配置在所述回收槽的液位控制器，配置在第五管线上的第二循环泵，液位控制器通过控制第二循环泵的启停以使回收槽内的液位不超过预设液位。
  8. 根据权利要求7所述的基板处理装置，其特征在于，所述液位控制器设定有第一液位值和第二液位值，当液位控制器检测到回收槽内的液位超过第一液位值时，液位控制器发送开启第二循环泵的指令，将回收槽内的化学液泵送回供液槽；
    当液位控制器检测到回收槽内的液位低于第二液位值时，液位控制器发送关闭第二循环泵的指令，停止将回收槽内的化学液泵送回供液槽。
  9. 根据权利要求1所述的基板处理装置，其特征在于，还包括配置在所述第五管线上的温度报警器，温度报警器设定有安全温度，当温度报警器检测到第五管线内的化学液温度超过安全温度时，温度报警器发出警报，基板处理装置停止作业。
  10. 根据权利要求9所述的基板处理装置，其特征在于，所述安全温度设有上限值和下限值，上限值为基板处理温度，下限值为化学液出现颗粒团聚的临界温度，当温度报警器检测到第五管线内的化学液温度高于上限值或低于下限值时，温度报警器均发出警报，提醒基板处理装置停止作业。
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