WO2023049139A1 - Source d'ondes millimétriques couvrant plusieurs octaves avec mémoire de phase - Google Patents

Source d'ondes millimétriques couvrant plusieurs octaves avec mémoire de phase Download PDF

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Publication number
WO2023049139A1
WO2023049139A1 PCT/US2022/044177 US2022044177W WO2023049139A1 WO 2023049139 A1 WO2023049139 A1 WO 2023049139A1 US 2022044177 W US2022044177 W US 2022044177W WO 2023049139 A1 WO2023049139 A1 WO 2023049139A1
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Prior art keywords
signal
semiconductor laser
frequency
tone
voltage bias
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Application number
PCT/US2022/044177
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English (en)
Inventor
Paul T. HARTIN
Kalin Spariosu
Michael R. Patrizi
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Raytheon Company
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Filing date
Publication date
Priority claimed from US17/948,665 external-priority patent/US20230089039A1/en
Application filed by Raytheon Company filed Critical Raytheon Company
Publication of WO2023049139A1 publication Critical patent/WO2023049139A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06253—Pulse modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/107—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using electro-optic devices, e.g. exhibiting Pockels or Kerr effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature

Definitions

  • Quasi-optical RF and millimeter-wave (MMW) sources utilize a frequency comb (FC) generated by photonic integrated circuit (PIC) based mode locked (ML) semi-conductor lasers (SCLs).
  • FC frequency comb
  • PIC photonic integrated circuit
  • ML SCLs feature an inherent fixed-phase relationship between longitudinal modes within a laser resonator cavity. In essence, the longitudinal modes of the ML laser are mutually coherent.
  • a longitudinal mode is a sinusoidal oscillation of a wave at a fixed frequency.
  • a mode locked laser-based synthesizer utilizes the interference between two or more waves of natural or resonant frequencies within a laser resonator cavity to produce superimposing sinusoidal waves with different frequencies defined by longitudinal mode frequency spacing to form resultant waves of frequencies governed by the difference in the natural or resonant frequencies generated by the frequency “comb.”
  • a synthesizer can generate different frequencies defined by the mode locked laser waveform.
  • Tunable radiofrequency (RF) or MMW tone generation is generated by modulating or tuning the two or more frequency component pairs from the ML SCL generated frequency comb.
  • EW electronic warfare
  • SWaP-C compact, low size, weight, power, and cost MMW sources or synthesizers with wideband frequency tunability.
  • Current state of the art techniques cannot cover the full required bandwidths with a single frequency source, requiring multiple sources, mixing stages, or frequency doublers.
  • a resulting multi-tone approach requires extensive filtering. The resulting systems are highly complex and inefficient, with a large
  • Synthesizers typically have multiple local oscillator (LO) tones possible. In cases where phase memory or extremely fast tuning is required (like EW applications), typically all of the tones are generated simultaneously. Then each tone must be filtered separately, and switches must be used to select the desired tone to send to the mixer. Amplifiers may also be required. High isolation is generally required, so it may require multiple stages of switches. Due to the loss of the filters and switches, additional amplification is generally required to meet the required LO power for passive mixers. Tunable LO sources such as phased-lock loops (PLLs) are often used where possible, but they cannot provide phase memory or high-speed tuning.
  • PLLs phased-lock loops
  • SWaP-C size, weight, power, and cost
  • a synthesizer includes a controller configured to receive a first signal; A digital-to-analog converter (DAC) is coupled to the controller and configured to generate a voltage bias based on the first signal. The voltage bias corresponds to a target resonant frequency.
  • a semiconductor laser is coupled to the DAC and configured to receive a second signal tone. The semiconductor laser generates a plurality of tone signals having octave multiples of a base sub-harmonic tone of the second signal tone.
  • a method includes providing a first signal to a controller. Also, the method includes generating, by a digital-to-analog converter (DAC) coupled to the controller, a voltage bias based on the first signal. The voltage bias corresponds to a target resonant frequency. A second frequency signal tone is provided to a semiconductor laser coupled to the DAC. The second frequency signal tone includes a sub-harmonic multiple values of a frequency comb (FC) component. Furthermore, the method includes generating, by the semiconductor laser, an output signal when a specific tone signal or a plurality of tone signals all having mutual coherence and/or phase memory.
  • DAC digital-to-analog converter
  • FIG. 1 is a schematic diagram of an exemplary tone selectable radio frequency (RF) synthesizer with phase-based memory, in accordance with some embodiments.
  • RF radio frequency
  • FIG. 2 is a schematic diagram of an exemplary structure of a mode locked semiconductor laser (MLSCL), in accordance with some embodiments.
  • MLSCL mode locked semiconductor laser
  • FIG. 3 is a schematic diagram of an input signal waveform comprising a frequency comb having equidistant optical frequency components, in accordance with some embodiments.
  • FIGs. 4A-4B are graphs of coherence between frequency comb tones in the MLSCL of FIG. 2, in accordance with some embodiments.
  • FIG. 5 is a process flowgraph of operations included in an example process 500 performed by a synthesizer, in accordance with some embodiments.
  • first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms may be only used to distinguish one element, component, region, layer or section from another element, component, region, layer, or section. That is, terms such as “first,” “second,” and other numerical terms, when used herein, do not imply a sequence or order unless clearly indicated by the context.
  • a synthesizer comprising a controller configured to receive a first signal.
  • the synthesizer also comprises a digital-to-analog converter (DAC) coupled to the controller and configured to generate a voltage bias based on the first signal, the voltage bias corresponding to a target resonant frequency.
  • DAC digital-to-analog converter
  • the synthesizer includes a semiconductor laser, such as a mode locked semiconductor laser (MLSCL), coupled to the DAC and configured to receive a frequency signal/tone, which generates a plurality of frequencies/tones by the MLSCL - all being phase coherent with respect to each other which may be the source of desired RF local oscillator source(s) potentially spanning muti-octaves and all being phase coherent with respect to each other.
  • a semiconductor laser such as a mode locked semiconductor laser (MLSCL)
  • MLSCL mode locked semiconductor laser
  • the MLSCL is configured to generate an output signal when a specific tone signal of the plurality of tone signals has a local oscillator frequency that corresponds to the target resonant frequency.
  • the present disclosure therefore provides for a tunable synthesizer without the use of a PLL or voltage-controlled oscillator (VCO).
  • VCO voltage-controlled oscillator
  • the present disclosure also provides direct phase locking to a sub-harmonic reference frequency without a frequency divider. This is a single-chip synthesizer solution providing both phase memory and tunability.
  • the MLSCL Due to inherent coherency of the FC components generated by the MLSCL, all the multi-octave frequencies of the injected sub-harmonic tone may be phase locked with inherent coherency with respect to each other. Furthermore, the MLSCL generates an output frequency tone that is the genesis of a RF local oscillator frequency source. Since the MLSCL generates multi octave spanning frequencies based on the DAC / MLSLC generated specific frequency tone, the generated RF local oscillator frequency source(s) can be comprised of multiple octave spanning frequencies - all being mutually coherent / in phase.
  • phase locked output frequency requiring no feedback mechanism is provided. This achieves variable (integer multiple) frequencies from single device.
  • the use of the MLSCL allows for inherent phase coherency which enables phase memory and obviates the need for multiple fixed frequency sources.
  • single MLSCLs near approximately millimeter wave center fundamental frequency architecture offers sub-harmonic to resonant tuning range spanning multi octave ranges (10 MHz to 100 GHz).
  • FIG. 1 illustrates an exemplary tone selectable radio frequency (RF) synthesizer 100 with phase-based memory, in accordance with some embodiments.
  • Synthesizer 100 comprises a controller 110 coupled to a non-volatile memory 120 such as a NAND flash memory.
  • the controller 110 and the non-volatile memory 120 may be mounted onto a memory card that is detachably connected to the synthesizer 100.
  • Controller 110 may also comprise a processor (not shown).
  • the synthesizer 100 is configured to receive a control signal which is fed into the controller 110.
  • the control signal contains information which configures the synthesizer 100 for operation.
  • Synthesizer 100 further comprises a digital-to-analog converter (DAC) 130 coupled to the controller 110.
  • DAC digital-to-analog converter
  • the controller 110 retrieves a voltage bias value VKM from the non-volatile memory 120 and instructs the DAC 130 to generate a voltage bias of a specified voltage bias value VKM.
  • the voltage bias value VKM may be stored in the non-volatile memory 120.
  • the DAC 130 is further coupled to a semiconductor laser 140 to which the DAC 130 provides the voltage bias.
  • the semiconductor laser 140 may comprise a mode locked semiconductor laser (MLSCL).
  • An input signal may also be provided to the synthesizer 100, which is fed directly into the MLSCL 140.
  • the input signal may comprise a plurality of tone signals, each having a local oscillator frequency.
  • the MLSCL 140 receives the input signal and the voltage bias having a value VKM from the DAC 130 and generates a phase locked signal.
  • the synthesizer 100 may further comprises a photodiode 150, such as fiber pigtailed photodiode, which receives the phase locked signal from the MLSCL 140 and generates an emission RF waveform as the output signal of the synthesizer 100.
  • the phase locked signal from the MLSCL 140 may comprise of a single frequency tone generated by the MLSCL, or - if desired, multiple octaves of this tone which is be the source for the RF local oscillator or oscillators.
  • FIG. 2 illustrates an exemplary structure of the MLSCL 140, in accordance with some embodiments.
  • the MLSCL 140 comprises a laser resonator cavity 200 positioned between a first resonator mirror 210 and a second resonator mirror 220, in accordance with some embodiments.
  • the first resonator mirror 210 and the second resonator mirror 220 may be formed by an etching or bonding process. Such process may be similar to that used in photonic integrated circuit (PIC) architectures.
  • PIC photonic integrated circuit
  • the first resonator mirror 210 and the second resonator mirror 220 may be defined by cleaved end faces of the resonator cavity with additional coatings where necessary.
  • the laser resonator cavity 200 further comprises an active quantum well gain medium 230, 240, a saturable absorber 250, and an electro-optical modulator 260.
  • the gain medium 230, 240 may comprise Indium Gallium Arsenide - Phosphide (InGaAsP), for example, and may include one or more quantum wells.
  • the gain medium is the source of optical gain within the MLSCL 140.
  • the gain medium 230, 240 adds energy to amplify waveforms of an input signal provided to the laser resonator cavity 200.
  • the gain is a result of the stimulated emission of the input signal waveforms through electronic transitions from a higher energy state to a lower energy state within the energy band gap of the gain medium 230, 240.
  • a voltage is provided to the gain medium 230, 240 via a DC voltage bias 225.
  • the DC voltage bias 225 may be 5 V.
  • the DC bias 225 serves as an electrical charge pump for the gain medium 230, 240.
  • frequency modulation may also be applied via the DC voltage bias 225.
  • the frequency comb may include discrete lines with an exact constant spacing which equals the pulse repetition frequency fo.
  • a frequency comb may include a series of optical pulses separated in time by a round-trip time within the laser resonator cavity 200.
  • the frequency comb may be defined by the dimensions of the laser resonator cavity 200 such length or separation between resonator mirrors.
  • the frequency comb may also be defined by the optical elements disposed within the laser resonator cavity, such as an electro-optical modulator 260, as will be explained in more detail below.
  • the frequency comb may include millimeter waves of the order of ⁇ 10 to 100 GHz.
  • the saturable absorber 250 is coupled to the gain medium 230, 240 and causes the formation of oscillating waveforms in the laser resonator cavity 200 when an input signal 235 is provided to it. Input signal 235 is similar to the input signal shown in FIG. 1.
  • the saturable absorber 250 may comprise a solid (crystal, glass, polymer) or be constructed of similar material as that of the gain medium 230, 240. According to some embodiments, the saturable absorber 250 may comprise Indium Gallium Arsenide - Phosphide (InGaAsP), and variations thereof.
  • the saturable absorber 250 may be electrically isolated from the gain medium voltage bias 225 (e.g., by an etching process).
  • gain medium 230, 240 may include an electrically isolated region in which the saturable absorber 250 is located that does not apply any gain to waveforms oscillating in the laser resonator cavity 200.
  • the input signal waveforms to the MLSCL - laser resonator cavity 200 may include a tuned frequency tone which can be a sub-harmonic of the frequency comb component generated by the MLSCL which results in MLSCL outputting the base frequency dictated by the DAC, and multi octave multiples of the base frequency afforded by the gain bandwidth of the MLSCL.
  • the MLSCL frequency comb comprising equidistant optical frequency components inherently generates the multi octave spanning multiples of the base sub- harmonic injected frequency all being mutually coherent / in phase.
  • the RF oscillator source can be chosen via RF amplifiers and appropriate filters to generate a single or multiple harmonic tones.
  • the injection signal is employed via the intra-cavity saturable absorber element.
  • the input signal 235 comprises of a frequency signal tone, which can then generate a plurality of tone signals. These mutually coherent frequency tones may be generated by selective RF amplifiers and filter combinations to choose a specific frequency for the RF local oscillator, or multiple octaves of base sub-harmonic frequency.
  • the input signal 235 generated by the DAC is injected into the saturable absorber 250 of the MLSCL 140.
  • the electro-optical modulator 260 may comprise a material with a variable index of refraction, such as, for example, a Kerr crystal.
  • the electro-optical modulator 260 may be disposed within the laser resonator cavity 200, and located downstream of the gain medium 230, 240. In some embodiments, the electro-optical modulator 260 may be positioned in closer proximity to the second resonator mirror 220 than the first resonator mirror 210.
  • Voltage bias VKM 255 may be applied to the electro-optical modulator 260 to vary the electric field applied across the Kerr crystal. As previously described, voltage bias VKM is generated by the DAC 130 upon instruction by the controller 110 and the control signal.
  • the change in electric field in the electro-optical modulator 260 causes a change of refraction index of the Kerr crystal. This gives rise to polarization and/or change of optical phase of signals passing through the electro-optical modulator 260.
  • the change in phase is proportional to the voltage bias 255 applied to the Kerr crystal. This means that only certain frequency tones in the input signal 235 are allowed to pass through the electro-optical modulator 260. Specifically, only the LO tones which have a frequency that match the resonant frequency corresponding to the voltage bias value VKM are allowed to pass. As such, the phase and frequency of waveforms passing through the electro-optical modulator 260 may be controlled by the voltage bias VKM applied to the electro-optical modulator 260.
  • the MLSCL 140 may be similar to that described in U.S. Patent Application Ser. No. 17/748,698, filed on May 19, 2022, the contents of which are hereby incorporated herein in entirety.
  • FIG. 3 illustrates an input signal waveform comprising a frequency comb 300 having equidistant optical frequency components with an exact constant spacing which equals the pulse repetition frequency fo, in accordance with some embodiments.
  • voltage bias VKM applied to the electro-optical modulator 260 controls the operation of the MLSCL 140.
  • the voltage bias VKM sets the operation frequency LAS of the MLSCL 140 such that input tone signals having an LO frequency that match the resonant frequency corresponding to the voltage bias value VKM are allowed to pass through the MLSCL 140. This is shown in FIG.
  • an input signal 235 comprising a sub-harmonic tone with respect to frequency component in the FC: N' 1 fo generates multiple octaves 302 of the base frequency tone: M N' 1 fo with M ( ⁇ N) limited by the bandwidth of the gain medium in the MLSCL.
  • Multiples of the input tone signal having a frequency that match the resonant frequency 304 corresponding to the voltage bias value VKM are allowed to pass through the MLSCL 140. These signals are locked to the operation frequency LAS.
  • the phase memory (coherence) at the active saturable absorber lock is about 300 Hz for a center frequency of 10 MHz to 50 MHz.
  • the coherence between frequency components in the generated sub-harmonic 235 and octave 302 multiples of this frequency can be instantiated up to a frequency of about 100 GHz, as shown in graph 400 of FIG. 4A.
  • Allan deviation (ADEV) on common LO frequencies is well within the linewidth / frequency excursion of base frequency of the MLSCL 140 in free running mode.
  • Inherent coherence between frequency comb LO tones in MLSCL 140, large gain bandwidth and long coherence time provides for multi-octave span millimeter wave generation with phase memory.
  • the MLSCL optical gain bandwidth AIB is greater than about 3.1 THz for a 25 nm equivalent spectral gain bandwidth. As can be seen in graph 450 of FIG. 4B, at a nominal 40 GHz base HAS, the gain bandwidth sustains about 60 frequency comb components at a VKM bias voltage of less than about 6 V.
  • bias voltage VKM is suitable for frequency tuning as it creates a resonance at the desired center frequency at an integer multiple of the reference frequency.
  • Coherent length limits maximum N ratio of output/reference frequency that can achieve a phase lock.
  • N greater than 100,000 is achievable.
  • a resonance range of 100 kHz enables coherent locking to reference without feedback as long as N x Reference variation.
  • fractional frequencies are also possible as long as least common multiple of reference frequency and output frequency is less than the maximum value of N.
  • FIG. 5 is a process flowgraph of operations included in an example process 500 performed by a synthesizer, in accordance with some embodiments.
  • Process 500 includes providing a first signal (such as control signal) to a controller (such as controller 110) (Step 502).
  • Process 500 includes generating, by a digital-to-analog converter (such as DAC 130) coupled to the controller, a voltage bias (such as voltage bias 255) based on the first signal (Step 504).
  • the voltage bias corresponds to a target resonant frequency.
  • process 500 includes providing a second frequency signal tone (such as input signal) to a semiconductor laser (such as MLSCL 140) coupled to the DAC (Step 506).
  • a semiconductor laser such as MLSCL 140
  • process 500 includes generating, by the semiconductor laser, an output signal (such as the phase locked signal of FIG. 1) when a specific tone signal or a plurality of tone signals have a local oscillator frequency that corresponds to the target resonant frequency, all having mutual coherence and/or phase memory (Step 508).
  • an output signal such as the phase locked signal of FIG. 1
  • the disclosure describes a synthesizer architecture using a tunable MMW power oscillator that does not require power amplification (optical and/or RF).
  • the advantages provided by the architecture include implementing a tunable synthesizer without using a PLL or VCO.
  • the architecture allows direct phase locking to a sub-harmonic reference frequency without a frequency divider.
  • Single-chip synthesizer solution is provided that includes both phase memory and tunability.
  • the synthesizer architecture enables a PLL-like frequency synthesis without the pitfalls of losing phase memory.
  • the phase-locked output frequency requires no feedback mechanism.
  • the synthesizer architecture may achieve variable integer multiple / frequencies from a single device.
  • An MLSCL-enabled phase memory may generate inherent phase coherency.
  • the synthesizer architecture obviates the need for multiple fixed frequency sources. Furthermore, the synthesizer architecture utilizes an MLSLO with a near ⁇ MMW center fundamental frequency offering sub-harmonic to resonant tuning range spanning multi-octave (10 MHz - 100 GHz). [0035] Reference in the specification to “one implementation” or “an implementation” means that a particular feature, structure, or characteristic described in connection with the implementation is included in at least one implementation of the disclosure.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

La présente invention concerne un synthétiseur, qui présente un dispositif de commande configuré pour recevoir un premier signal. Un convertisseur numérique-analogique (CNA) est couplé au dispositif de commande et configuré pour générer une polarisation de tension sur la base du premier signal. La polarisation de tension correspond à une fréquence de résonance cible. Un laser à semi-conducteur est couplé au CNA et configuré pour recevoir une seconde tonalité de signal. Le laser à semi-conducteur génère une pluralité de signaux de tonalité présentant des multiples d'octave d'une tonalité sous-harmonique de base de la seconde tonalité de signal.
PCT/US2022/044177 2021-09-22 2022-09-21 Source d'ondes millimétriques couvrant plusieurs octaves avec mémoire de phase WO2023049139A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202163247051P 2021-09-22 2021-09-22
US63/247,051 2021-09-22
US17/948,665 2022-09-20
US17/948,665 US20230089039A1 (en) 2021-09-22 2022-09-20 Multi-octave spanning millimeter wave source with phase memory

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003043231A2 (fr) * 2001-11-15 2003-05-22 Hrl Laboratories, Llc Procede et appareil de synthese et generation de signaux
US7373088B2 (en) * 2001-11-15 2008-05-13 Hrl Laboratories Agile spread waveform generator
US20180115136A1 (en) * 2015-06-08 2018-04-26 University Of Central Florida Research Foundation, Inc. Ultra-low noise mode-locked laser, methods, and applications
US10050704B1 (en) * 2016-08-18 2018-08-14 Hrl Laboratories, Llc Power efficient optical-frequency synthesizer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003043231A2 (fr) * 2001-11-15 2003-05-22 Hrl Laboratories, Llc Procede et appareil de synthese et generation de signaux
US7373088B2 (en) * 2001-11-15 2008-05-13 Hrl Laboratories Agile spread waveform generator
US20180115136A1 (en) * 2015-06-08 2018-04-26 University Of Central Florida Research Foundation, Inc. Ultra-low noise mode-locked laser, methods, and applications
US10050704B1 (en) * 2016-08-18 2018-08-14 Hrl Laboratories, Llc Power efficient optical-frequency synthesizer

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