WO2023045598A1

WO2023045598A1 - Atomizing core, atomizer, aerosol generating device, and atomizing core preparation method

Info

Publication number: WO2023045598A1
Application number: PCT/CN2022/111313
Authority: WO
Inventors: 邱伟华
Original assignee: 东莞市维万特智能科技有限公司
Priority date: 2021-09-22
Filing date: 2022-08-10
Publication date: 2023-03-30

Abstract

An atomizing core, an atomizer, an aerosol generating device, and an atomizing core preparation method. The atomizing core preparation method comprises: first forming a transition layer (2) on an atomizing surface (11) in a thin film deposition manner; then, forming, by means of a thin film deposition process, a heating layer (3) on a surface of the transition layer (2) facing away from a porous substrate (1); and next, forming a protective layer (4) on the heating layer (3) by means of the thin film deposition process, the heating layer (3) being a nickel-chromium alloy layer. The heating layer (3) employs a nickel-chromium alloy layer, thereby reducing the cost of the atomizing core; the arrangement of the transition layer (2) can reduce the roughness of the surface of the porous substrate (1), so that the heating layer (3) has good continuity and it is convenient to adjust and control the thickness of the heating layer (3); moreover, the transition layer (2) can also block sodium and potassium ions of the porous substrate (1) from diffusing into the heating layer (3) under the action of an electric field, so as to enhance the stability of the resistance value of the heating layer (3); the atomizing core processed by the atomizing core preparation method has a larger heating area, realizes more uniform heating, and avoids a phenomenon of excessively high local temperature.

Description

Atomization core, atomizer, aerosol generating device and preparation method of atomization core

technical field

The invention belongs to the technical field of atomization, and in particular relates to an atomization core, an atomization core, an atomizer, an aerosol generating device and a method for preparing the atomization core.

Background technique

The thin-film heating atomizing core used in the aerosol generating device usually attaches a heating film to the atomizing surface of porous ceramics, and heats the aerosol-forming substrate on the atomizing surface through the heating film, so that the aerosol forms a matrix mist turned into smoke. The current thin-film heating atomizing core has the problems of poor continuity and difficult adjustment and control of thickness, which easily leads to poor resistance resistance stability of the thin-film heating layer, which in turn leads to poor heating uniformity of the thin-film heating atomizing core.

Contents of the invention

Based on the above-mentioned problems existing in the prior art, one of the purposes of the embodiments of the present invention is to provide a method by first covering at least part of the outer surface of the porous substrate with a transition layer, and then covering the transition layer with nickel-chromium The heating layer formed by processing the alloy material makes the heating layer have good continuity, which is convenient for adjusting and controlling the thickness of the heating layer, reduces the cost of the heating layer, and enhances the resistance stability of the heating layer.

In order to achieve the above purpose, the technical solution adopted by the present invention is to provide an atomizing core, comprising:

Porous substrate, at least part of the outer surface is formed with an atomization surface for heating and atomizing the aerosol-forming substrate. The sol-forming matrix can be transported to the atomizing surface through the microporous structure;

a transition layer covering at least part of the atomized surface;

A heat generating layer, which is used to heat and atomize the aerosol to form a substrate after being energized, the heat generating layer is combined on the side of the transition layer away from the porous substrate, and the heat generating layer is a nickel-chromium alloy layer; and

The protection layer is covered on the side of the heat generating layer away from the transition layer.

Further, the atomizing core also includes two electrodes for electrically connecting the heating layer and the power supply device, the electrodes are formed on the atomizing surface through a thick film deposition process, and the electrodes are gold layers , silver layer, platinum layer, palladium layer, aluminum layer, copper layer, gold-silver alloy layer, silver-platinum alloy layer, silver-palladium alloy layer at least one.

Further, the protection layer is at least one of an aluminum oxide layer, a silicon oxide layer, an aluminum nitride layer, a silicon nitride layer, a titanium oxide layer, and a titanium nitride layer.

Further, the protective layer has a thickness of 0.5-3 μm.

Further, the thickness of the heat generating layer is 1-5 μm.

Further, the transition layer is at least one of an aluminum nitride layer, a silicon nitride layer, a chromium nitride layer, and a chromium carbide layer.

Further, the transition layer has a thickness of 0.1-1 μm.

Further, the electrodes are arranged in pairs and at intervals on the first area on the atomization surface, the transition layer is covered on the second area on the atomization surface, and the second area is the mist The area on the atomization surface outside the first area, so that the first area and the second area are continuous areas on the atomization surface, and the thickness of the electrode is greater than the thickness and thickness of the heat generating layer The sum of the transition layer thicknesses.

Further, a groove is formed between the two electrodes, and the transition layer, the heat generating part of the heat generating layer, and the protective layer are sequentially stacked from the inner bottom surface of the groove to the top, and the The thickness of the electrode is greater than the sum of the thicknesses of the transition layer, the heat generating part and the protective layer.

Further, the heat generating layer includes a heat generating part formed in the second region, a first connecting part formed on at least part of the surface of one of the electrodes, and a second connecting part formed on at least part of the surface of the other electrode. , the first connecting portion and the second connecting portion are respectively connected to the heating portion.

Further, the first connection part includes a first joint part formed on a side of one of the electrodes away from the porous substrate, and the second connection part includes a first joint part formed on the side of the other electrode away from the porous substrate. The second joint part on one side, the corresponding side of the first joint part is connected to the corresponding side of the heat generating part, and the corresponding side of the second joint is connected to the corresponding side of the heat generating part .

Further, the thickness of the electrode is 20-60 μm.

Based on the above-mentioned problems in the prior art, the second object of the embodiments of the present invention is to provide an atomizer having an atomizing core provided by any of the above solutions.

In order to achieve the above object, the technical solution adopted by the present invention is: to provide an atomizer, including the atomizing core provided by any one of the above solutions.

Based on the above-mentioned problems in the prior art, the third object of the embodiments of the present invention is to provide an aerosol generating device having an atomizing core or an atomizer provided by any of the above solutions.

To achieve the above object, the technical solution adopted by the present invention is to provide an aerosol generating device, including the atomizing core or the atomizer provided by any of the above solutions.

Compared with the prior art, the above one or more technical solutions in the embodiments of the present invention have at least one of the following beneficial effects:

In the atomization core, atomizer and aerosol generating device in the embodiment of the present invention, the atomization core covers the transition layer on the atomization surface, and then coats the heating layer formed by processing the nickel-chromium alloy material on the transition layer , so that the transition layer is interposed between the heat generating layer and the porous substrate. Since the material used for the heating layer is nickel-chromium alloy, its cost is far lower than that of silver, palladium, gold and other precious metals, which can reduce the cost of the atomizing core. Moreover, the setting of the transition layer can not only reduce the roughness of the porous substrate surface, make the heating layer have good continuity, facilitate the adjustment and control of the thickness of the heating layer, and the transition layer can also block the sodium and potassium ions of the porous substrate from the action of the electric field. The lower diffusion enters the heating layer to enhance the stability of the resistance value of the heating layer. In addition, the transition layer can adjust the stress matching between the nickel-chromium alloy heating layer and the surface of the porous substrate, enhance the adhesion between the nickel-chromium alloy heating layer and the porous substrate, improve the stability and reliability of the working performance of the heating layer, and extend the length of the atomizing core. service life.

Based on the above-mentioned problems in the prior art, the fourth object of the embodiments of the present invention is to provide a method for preparing an atomizing core.

In order to achieve the above object, the technical solution adopted by the present invention is to provide a method for preparing an atomizing core, which includes the following steps:

Depositing a transition layer: depositing a transition layer on at least part of the atomized surface of the porous substrate through a thin film deposition process;

Depositing a heating layer: through a thin film deposition process, depositing a heating layer on the side of the transition layer away from the porous substrate, the heating layer is a nickel-chromium alloy layer;

Depositing a protective layer: depositing a protective layer on the side of the heat generating layer away from the transition layer through a thin film deposition process.

Optionally, in the nickel-chromium alloy material of the heating layer, the mass ratio of Ni/(Ni+Cr) is 0.2-0.9.

Optionally, the porosity of the porous substrate is 30%-80%, and the pore diameter of the porous substrate is 10-30 μm.

In the preparation method of the atomizing core in the embodiment of the present invention, the transition layer is firstly formed on the atomization surface in the form of thin film deposition, and then a heating layer is formed on the side of the transition layer away from the porous ceramic substrate through the thin film deposition process, and then the protective The layer is formed on the heating layer through a thin film deposition process, and the heating layer is a metal layer formed by processing a nickel-chromium alloy material. Since the material used for the heating layer is nickel-chromium alloy, its cost is far lower than that of silver, palladium, gold and other precious metals, which can reduce the cost of the atomizing core. Moreover, the setting of the transition layer can not only reduce the roughness of the porous substrate surface, make the heating layer have good continuity, facilitate the adjustment and control of the thickness of the heating layer, and the transition layer can also block the sodium and potassium ions of the porous substrate from the action of the electric field. The lower diffusion enters the heating layer to enhance the stability of the resistance value of the heating layer. At the same time, the transition layer can adjust the stress matching between the nickel-chromium alloy heating layer and the surface of the porous substrate, enhance the adhesion between the nickel-chromium alloy heating layer and the porous substrate, and the protective layer can effectively prevent the carbonization or oxidation of the nickel-chromium alloy heating layer. Improve the stability and reliability of the working performance of the heating layer and prolong the service life of the atomizing core. In addition, the atomizing core processed by the atomizing core preparation method in the embodiment of the present invention has a larger heating area, more uniform heating, and no local excessive temperature phenomenon.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the accompanying drawings that need to be used in the descriptions of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only of the present invention. For some embodiments, those of ordinary skill in the art can also obtain other drawings based on these drawings without paying creative efforts.

Fig. 1 is a schematic cross-sectional structure diagram of an atomizing core provided by Embodiment 1 of the present invention;

Fig. 2 is another schematic cross-sectional structure diagram of the atomizing core provided by Embodiment 1 of the present invention;

Fig. 3 is a schematic top view structure diagram of the atomization core provided by Embodiment 2 of the present invention;

Fig. 4 is a schematic cross-sectional structure diagram of the atomization core provided by Embodiment 2 of the present invention;

Fig. 5 is a schematic cross-sectional structure diagram of a porous substrate provided by Embodiment 2 of the present invention;

Fig. 6 is a schematic cross-sectional structure diagram of the atomization core provided by the third embodiment of the present invention;

Fig. 7 is a schematic cross-sectional structure diagram of a porous substrate provided by Embodiment 3 of the present invention;

Fig. 8 is a schematic cross-sectional structure diagram of the atomization core provided by Embodiment 4 of the present invention;

Fig. 9 is a comparison chart of the resistance values of the atomizing cores prepared in Example 1 to Example 15 of the present invention in a cycle test;

Fig. 10 is a comparison chart of the resistance values of atomizing cores prepared in Example 2, Example 5, Example 8, Example 11 and Example 14 of the present invention in cycle tests;

Fig. 11 is a comparison chart of resistance values of atomizing cores prepared in Examples 1 to 3 of the present invention in cycle tests;

Fig. 12 is a comparison chart of the resistance values of the atomizing cores prepared in Example 2 and Example 4 to Example 6 of the present invention in a cycle test;

Fig. 13 is a comparison chart of the resistance values of the atomizing cores prepared in Example 5 and Example 7 to Example 9 of the present invention in a cycle test;

Fig. 14 is a comparison chart of the resistance values of the atomizing cores prepared in Example 8 and Example 10 to Example 12 of the present invention in a cycle test;

Fig. 15 is a comparison chart of resistance values of atomizing cores prepared in Example 11 and Example 13 to Example 15 of the present invention in a cycle test.

Wherein, each reference sign in the figure:

1-porous substrate; 11-atomization surface; 11a-first region; 11b-second region; 11c-first surface; 11d-second surface; 11e-third surface; 11f-first transition surface; 11g- The second transition surface; 12-protrusion; 13-first depression; 14-second depression;

2- transition layer;

3-heating layer; 31-heating part; 32-first connecting part; 321-first side part; 322-first joint part; 33-second connecting part; 331-second side part; 332-second joint department;

4-protective layer; 41-exposed part; 5-electrode; 6-groove.

Detailed ways

In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

Embodiment one

Please refer to Figs. 1 to 2 together, and now the atomizing core provided by Embodiment 1 of the present invention will be described. The atomizing core provided by Embodiment 1 of the present invention is used in an atomizer, which can generate heat under the electric drive of the power supply device of the aerosol generating device, and heat and atomize the aerosol-forming substrate in the liquid storage chamber of the atomizer to form The smoke is for the user to inhale to achieve the effect of simulating smoking.

Please refer to FIG. 2 , the atomizing core provided by Embodiment 1 of the present invention includes a porous base 1 and a heat generating layer 3 . At least part of the outer surface of the porous substrate 1 is formed with an atomizing surface 11 . The porous substrate 1 has a capillary adsorption microporous structure inside, the porous substrate 1 can absorb and store aerosols through the microporous structure to form a matrix, and the adsorbed and stored aerosol-formed matrix can be continuously transported to the atomizing surface 11 through the microporous structure . The heat generating layer 3 is formed on at least part of the atomizing surface 11 . When the atomizing core is in use, power is supplied to the atomizing core through the power supply device of the aerosol generating device, the heating layer 3 generates heat after being energized, and the heat is transmitted to the aerosol forming matrix on the atomizing surface 11, so that the aerosol forming matrix Atomization forms smoke that can be inhaled by the user.

In some of the embodiments, the porous substrate 1 can also be a porous material capable of absorbing liquid, such as porous ceramics and porous metal. In some of the specific embodiments, the porous substrate 1 is porous ceramics; further, in some of the more specific embodiments, the porosity of the porous substrate 1 is 30%-80%, and the pore diameter of the porous substrate 1 is 10-30 μm.

In some of the embodiments, the heating layer 3 is a metal layer or an alloy layer with stable chemical properties and good electrical and thermal conductivity, and the heating layer 3 is a copper layer, an iron layer, a nickel layer, a chromium layer, a gold layer, a silver layer, or a platinum layer. , palladium layer, molybdenum layer and other metal layers and gold-silver alloy layer, gold-platinum alloy layer, gold-silver-platinum alloy layer, silver-palladium alloy layer, silver-platinum alloy layer, palladium-copper alloy layer, palladium-silver alloy layer, nickel-chromium alloy layer at least any of the . In some specific embodiments, the heating layer 3 is a nickel-chromium alloy layer. The nickel-chromium alloy layer has good thermal performance, and the price of the nickel-chromium alloy layer is higher than that of precious metal layers such as gold layer, silver layer, platinum layer, palladium layer, or gold-silver alloy layer, gold-platinum alloy layer, gold-silver-platinum alloy layer, and silver-palladium alloy layer. , silver-platinum alloy layer, palladium-copper alloy layer, palladium-silver alloy layer and other precious metal alloy layers are cheap. In some of the more specific embodiments, the heating layer 3 is a nickel-chromium alloy layer, and the mass ratio of Ni/(Ni+Cr) is 0.2-0.9. According to the resistance calculation formula, the thickness of the heating layer 3 determines the resistance value of the heating layer 3. The thinner the heating layer 3 is, the larger the resistance value is, and the thicker the heating layer 3 is, the smaller the resistance value is. The thickness of the heating layer 3 is adjusted and controlled to achieve the purpose of adjusting the resistance value of the heating layer 3 . At the same time, in the research and development process, through a large number of experiments, the inventor found that: when the thickness of the heating layer 3 is too thin, the heating layer 3 of the thin layer structure is relatively loose and the continuity is not good, which affects the stability of the resistance value of the heating layer 3 , the heat generating layer 3 is relatively easy to be oxidized or carbonized at high temperature; the thicker the heat generating layer 3 is, the continuity and compactness of the heat generating layer 3 of the thin layer structure will also increase accordingly, so that the resistance to oxidation or carbonization of the heat generating layer 3 The ability is greatly enhanced, thereby enhancing the stability of the resistance of the heating layer 3. However, when the thickness of the heat generating layer 3 is too thick, on the one hand, the formation time of the heat generating layer 3 is longer, thereby greatly reducing the production efficiency; The microstructure is destroyed, affecting the stability of the resistance value of the heating layer 3 . And considering that the resistance of the heating layer 3 is too low, there is a potential safety hazard of short circuit overload of the heating layer 3, and the resistance of the heating layer 3 is too high, there is a problem that the required heating power cannot be reached, so the common resistance of the heating layer 3 is 0.8 ~ 2Ω . Considering the influence of the thickness of the heating layer 3 on the stability of the resistance of the heating layer 3, and considering the positive correlation between the thickness of the heating layer 3 and the formation time, combined with the common resistance of the heating layer 3 being 0.8-2Ω, taking into account the above considerations, the heat generation The thickness of the layer 3 is set to be 1˜5 μm. In some of the specific embodiments, the heating layer 3 is a nickel-chromium alloy layer, and the thickness of the nickel-chromium alloy layer is set to 1-5 μm, so that the resistance stability of the heating layer 3 is improved, and the resistance of the heating layer 3 is within the common resistance range , and the formation time of the heating layer 3 is moderate, thereby improving the resistance stability of the atomizing core, the heating power of the atomizing core is relatively large, the atomizing effect of the atomizing core is good, and the manufacturing cost of the atomizing core is controllable.

In some embodiments, the thin film deposition process may be, but not limited to, a magnetron sputtering process in the thin film deposition process. Because the heating area of the atomizing core is larger and the heating is more uniform, there will be no local overheating phenomenon, which is beneficial to improve the uniformity of heating of the aerosol-forming substrate, thereby improving the atomization effect. In some of the specific embodiments, the heating layer 3 is formed by depositing the magnetron sputtering process, the heating layer 3 is a nickel-chromium alloy layer, the target power density of the magnetron sputtering process is 5-15W/cm ² , and the sputtering pressure is 0.1-0.3Pa, and the sputtering time is 30-90min. In this way, a nickel-chromium alloy layer with a thickness of 1-5 μm is deposited on at least part of the atomized surface 11 of the porous substrate 1 by magnetron sputtering, and the nickel-chromium alloy layer forms the heating layer 3 .

In the process of depositing and forming the heating layer 3 by thin film deposition process, the formation process of the heating layer 3 generally includes: 1. Initial formation of the island: the gaseous target material reaches the surface of the porous substrate 1, adheres and condenses to form some uniform and fine The moving atomic group, the in-situ group is called "island"; 2. The number of islands is saturated: the "island" continuously accepts new deposited atoms, and gradually grows up by merging with other small "islands", and the number of islands quickly reaches saturation; 3. Island growth and nucleation: while small "islands" merge continuously, new small "islands" will be formed on the surface of the vacated porous substrate 1; 4. Merge and grow filling: the formation of small "islands" The merger continues, and the larger "islands" continue to annex the smaller "islands" nearby; 5. Filling the pores to form a film: the isolated small "islands" are connected to each other as the merger progresses, and finally only some Isolated holes and channels, these holes and channels are continuously filled to form a film with continuous morphology and complete coverage.

Please refer to FIG. 1 and FIG. 2 together. In some embodiments, the atomization core further includes a transition layer 2 formed between the heat generating layer 3 and the porous substrate 1 . In a specific embodiment, a transition layer 2 with a thickness of 0.1-1 μm is deposited on at least part of the atomized surface 11 of the porous substrate 1 by a thin film deposition process, and a heat generating layer 3 is formed on the side of the transition layer 2 away from the porous substrate 1 . Because the potential energy of the pits on the surface of the porous substrate 1 is the lowest, the process of forming the transition layer 2 is the same as that of the above-mentioned heat generating layer 3, so the transition layer 2 reduces the roughness of the surface of the porous substrate 1, so that the heat generating layer 3 has a good continuity. It is convenient to adjust and control the thickness of the heating layer 3 . Moreover, the transition layer 2 can also prevent sodium and potassium ions from the porous substrate 1 from diffusing into the heating layer 3 under the action of an electric field, thereby enhancing the stability of the resistance of the heating layer 3 . In addition, the transition layer 2 can adjust the stress matching between the heating layer 3 and the surface of the porous substrate 1, enhance the adhesion between the heating layer 3 and the porous substrate 1, make the heating layer 3 firmly bonded to the porous substrate 1, and improve the heat generation. The stable and reliable working performance of layer 3 prolongs the service life of the atomizing core. In some embodiments, the thin film deposition process may be, but not limited to, a magnetron sputtering process in the thin film deposition process.

In some of the specific embodiments, the transition layer 2 is deposited and formed by the magnetron sputtering process, the target power density of the magnetron sputtering process is 3-12W/cm ² , the sputtering pressure is 0.1-0.5Pa, and the sputtering time is 20-100 min, and the thickness of the transition layer 2 is 0.1-1 μm. When the thickness of the transition layer 2 is too thin, the transition layer 2 cannot achieve the above-mentioned effect of reducing the roughness of the porous substrate 1 surface and blocking the sodium and potassium ions of the porous substrate 1 from diffusing into the heating layer 3 under the action of an electric field; As the thickness of the layer 2 increases, the transition layer 2 can gradually reduce the roughness of the surface of the porous substrate 1, gradually prevent the sodium and potassium ions of the porous substrate 1 from diffusing into the heating layer 3 under the action of an electric field, and gradually adjust the heating layer 3 and the surface of the porous substrate 1. However, when the thickness of the transition layer 2 is too thick, the stress of the transition layer 2 will increase significantly, causing the microstructure of the transition layer 2 to be destroyed during the electrification of the atomizing core, and the transition layer 2 cannot block the porous substrate The sodium and potassium ions in 1 diffuse into the heating layer 3 under the action of the electric field, which affects the stability of the resistance value of the heating layer 3 . Therefore, the thickness of the transition layer 2 is set to 0.1-1 μm, so that the transition layer 2 reduces the roughness of the surface of the porous substrate 1, so that the transition layer 2 prevents the sodium and potassium ions of the porous substrate 1 from diffusing into the heating layer 3 under the action of an electric field, The transition layer 2 adjusts the stress matching between the heating layer 3 and the surface of the porous substrate 1 . Preferably, the thickness of the transition layer 2 is set to 0.3-0.8 μm, which facilitates reducing the surface roughness of the porous substrate 1 and at the same time helps to block the diffusion of sodium and potassium ions in the porous substrate 1 into the heating layer 3 under the action of an electric field.

In some embodiments, the stress values of the transition layer 2 and the porous substrate 1 are close to each other, so that the stresses of the transition layer 2 and the porous substrate 1 are well matched. In some specific embodiments, the porous substrate 1 is porous ceramics, and the transition layer 2 is at least any one of aluminum nitride layer, silicon nitride layer, chromium nitride layer, chromium carbide layer or other ceramic layers.

Please refer to FIG. 1 and FIG. 2 together. In some embodiments, the atomizing core further includes a protective layer 4 formed on the heat generating layer 3 . In a specific embodiment, the protection layer 4 with a thickness of 0.5-3 μm is deposited and formed on the side of the heating layer 3 facing away from the porous substrate 1 through a thin film deposition process. The protective layer 4 blocks the formation of the aerosol matrix and the outside air from entering the heating layer 3, so as to avoid oxidation or carbonization of the heating layer 3 during energization and use, enhance the oxidation resistance and carbonization resistance of the heating layer 3, and enhance the stability of the resistance of the heating layer 3 performance, improve the cycle life of the atomizing core. In some embodiments, the thin film deposition process may be, but not limited to, a magnetron sputtering process in the thin film deposition process. In some of the specific embodiments, the protective layer 4 is formed by depositing the magnetron sputtering process, the target power density of the magnetron sputtering process is 3-12W/cm ² , the sputtering pressure is 0.1-0.5Pa, and the sputtering time is 40-150 minutes. When the thickness of the protective layer 4 is too thin, the protective layer 4 cannot play the role of blocking the aerosol-forming matrix and the outside air from entering the heating layer 3; as the thickness of the protective layer 4 increases, the protective layer 4 can gradually block the aerosol-forming matrix And the outside air enters the heating layer 3; however, when the thickness of the protective layer 4 is too thick, the stress of the protective layer 4 will increase significantly, causing the microstructure of the protective layer 4 to be destroyed during the electrification of the atomizing core, and the protective layer 4 The aerosol-forming matrix and outside air cannot be blocked from entering the heating layer 3, which weakens the oxidation resistance and carbonization resistance of the heating layer 3, affects the stability of the resistance of the heating layer 3, and shortens the cycle life of the atomizing core. Based on the above considerations, the thickness of the protective layer 4 is set to 0.5-3 μm, so that the protective layer 4 blocks the aerosol-forming matrix and external air from entering the heating layer 3 . Preferably, the thickness of the protective layer 4 is set at 0.8-1.5 μm, which can well block the aerosol-forming substrate and external air from entering the heat-generating layer 3 .

In some of the embodiments, the protective layer 4 is chemically stable and has a compact structure. In some specific embodiments, the protective layer 4 is at least any one of an aluminum oxide layer, a silicon oxide layer, an aluminum nitride layer, a silicon nitride layer, a titanium oxide layer, and a titanium nitride layer.

Please refer to FIG. 2 in combination. In some embodiments, the heating layer 3 is provided with two exposed parts 41 that are not deposited to form a protective layer 4. The exposed parts 41 are used to realize the electrical connection between the power supply device and the heating layer 3. connect.

Embodiment 1 of the present invention also provides an atomizer, and the atomizer includes the atomizing core provided in any one of the above embodiments. Since the atomizer has all the technical features of the atomizing core provided by any of the above embodiments, it has the same technical effect as the atomizing core.

Embodiment 1 of the present invention also provides an aerosol generating device, which includes the atomizing core provided in any of the above embodiments or the atomizer provided in any of the above embodiments. Since the aerosol generating device has all the technical features of the atomizing core or atomizer provided by any of the above embodiments, it has the same technical effect as the atomizing core.

Embodiment 1 of the present invention also provides a method for preparing the above-mentioned atomizing core. The method for preparing the atomizing core in Embodiment 1 of the present invention includes the following steps:

Step S1: depositing a transition layer: depositing a transition layer 2 on at least part of the atomized surface 11 of the porous substrate 1 through a thin film deposition process;

Step S2: Depositing the heat generating layer: depositing the heat generating layer 3 on the side of the transition layer 2 facing away from the porous substrate 1 through a thin film deposition process;

Step S3: depositing a protective layer: a protective layer 4 is deposited on the side of the heat generating layer 3 facing away from the transition layer 2 through a thin film deposition process.

In the step S1 of depositing the transition layer, a transition layer 2 with a thickness of 0.1-1 μm is deposited on at least part of the atomized surface 11 of the porous substrate 1 by a thin film deposition process, and the stress value of the transition layer 2 is close to that of the porous substrate 1 . The transition layer 2 reduces the roughness of the surface of the porous substrate 1 , so that the heat generating layer 3 has good continuity, and it is convenient to adjust and control the thickness of the heat generating layer 3 . Moreover, the transition layer 2 can also prevent sodium and potassium ions from the porous substrate 1 from diffusing into the heating layer 3 under the action of an electric field, thereby enhancing the stability of the resistance of the heating layer 3 . In addition, the transition layer 2 can adjust the stress matching between the heating layer 3 and the surface of the porous substrate 1, enhance the adhesion between the heating layer 3 and the porous substrate 1, make the heating layer 3 firmly bonded to the porous substrate 1, and improve the heat generation. The stable and reliable working performance of layer 3 prolongs the service life of the atomizing core. Specifically, the thin film deposition process may be, but not limited to, a magnetron sputtering process in the thin film deposition process. When the transition layer 2 is deposited and formed by the magnetron sputtering process, the target power density of the magnetron sputtering process is 3-12W/cm ² , the sputtering pressure is 0.1-0.5Pa, and the sputtering time is 20-100min. The thickness of layer 2 is 0.1-1 μm. When the thickness of the transition layer 2 is too thin, the transition layer 2 cannot play the above-mentioned effect of reducing the roughness of the porous substrate 1 surface and blocking the sodium and potassium ions of the porous substrate 1 from diffusing into the heating layer 3 under the action of an electric field; If the thickness of the layer 2 is too thick, the stress of the transition layer 2 will increase significantly, causing the microstructure of the transition layer 2 to be destroyed during the electrification and use of the atomizing core, and the transition layer 2 cannot block the sodium and potassium ions of the porous substrate 1 in the electric field. Diffusion into the heating layer 3 under action affects the stability of the resistance value of the heating layer 3 . Therefore, the thickness of the transition layer 2 is set to 0.1-1 μm, so that the transition layer 2 reduces the roughness of the surface of the porous substrate 1, so that the transition layer 2 prevents the sodium and potassium ions of the porous substrate 1 from diffusing into the heating layer 3 under the action of an electric field, The transition layer 2 adjusts the stress matching between the heating layer 3 and the surface of the porous substrate 1 . Preferably, the thickness of the transition layer 2 is set to 0.3-0.8 μm, which facilitates reducing the surface roughness of the porous substrate 1 and at the same time helps to block the diffusion of sodium and potassium ions in the porous substrate 1 into the heating layer 3 under the action of an electric field. Specifically, the porous substrate 1 is a porous ceramic, and a transition layer 2 is deposited on at least part of the atomized surface 11 of the porous ceramic by a thin film deposition process. The transition layer 2 is an aluminum nitride layer, a silicon nitride layer, a chromium nitride layer, At least any one of a chromium carbide layer or other ceramic layers.

In the step S2 of depositing the heat generating layer, the heat generating layer 3 is deposited on the side of the transition layer 2 facing away from the porous substrate 1 by a thin film deposition process. Specifically, the heating layer 3 is a nickel-chromium alloy layer, and the thickness of the nickel-chromium alloy layer is set to 1-5 μm. The nickel-chromium alloy layer has good thermal performance, and the price of the nickel-chromium alloy layer is higher than that of precious metal layers such as gold layer, silver layer, platinum layer, palladium layer, or gold-silver alloy layer, gold-platinum alloy layer, gold-silver-platinum alloy layer, and silver-palladium alloy layer. , silver-platinum alloy layer, palladium-copper alloy layer, palladium-silver alloy layer and other precious metal alloy layers are cheap. In some of the more specific embodiments, the heating layer 3 is a nickel-chromium alloy layer, and the mass ratio of Ni/(Ni+Cr) is 0.2-0.9. According to the resistance calculation formula, the thickness of the heating layer 3 determines the resistance value of the heating layer 3. The thinner the heating layer 3 is, the larger the resistance value is, and the thicker the heating layer 3 is, the smaller the resistance value is. The thickness of the heating layer 3 is adjusted and controlled to achieve the purpose of adjusting the resistance value of the heating layer 3 . At the same time, in the research and development process, through a large number of experiments, the inventor found that: when the thickness of the heating layer 3 is too thin, the heating layer 3 of the thin layer structure is relatively loose and the continuity is not good, which affects the stability of the resistance value of the heating layer 3 , the heat generating layer 3 is relatively easy to be oxidized or carbonized at high temperature; the thicker the heat generating layer 3 is, the continuity and compactness of the heat generating layer 3 of the thin layer structure will also increase accordingly, so that the resistance to oxidation or carbonization of the heat generating layer 3 The ability is greatly enhanced, thereby enhancing the stability of the resistance of the heating layer 3. However, when the thickness of the heat generating layer 3 is too thick, on the one hand, the formation time of the heat generating layer 3 is longer, thereby greatly reducing the production efficiency; The microstructure is destroyed, affecting the stability of the resistance value of the heating layer 3 . And considering that the resistance of the heating layer 3 is too low, there is a potential safety hazard of short circuit overload of the heating layer 3, and the resistance of the heating layer 3 is too high, there is a problem that the required heating power cannot be reached, so the common resistance of the heating layer 3 is 0.8 ~ 2Ω . Considering the influence of the thickness of the heating layer 3 on the stability of the resistance of the heating layer 3, and considering the positive correlation between the thickness of the heating layer 3 and the formation time, combined with the common resistance of the heating layer 3 being 0.8-2Ω, taking into account the above considerations, the heat generation Layer 3 is a nickel-chromium alloy layer, and the thickness of the nickel-chromium alloy layer is set to 1-5 μm, so that the resistance stability of the heating layer 3 is improved, the resistance of the heating layer 3 is within the common resistance range, and the formation time of the heating layer 3 is moderate , so that the resistance stability of the atomizing core is improved, the heating power of the atomizing core is larger, the atomizing effect of the atomizing core is good, and the manufacturing cost of the atomizing core is controllable. Specifically, the thin film deposition process may be, but not limited to, a magnetron sputtering process in the thin film deposition process. When the heating layer 3 is formed by magnetron sputtering process, the heating layer 3 is a nickel-chromium alloy layer, the target power density of the magnetron sputtering process is 5-15W/cm ² , and the sputtering pressure is 0.1-0.3Pa. The injection time is 30-90 minutes. In this way, a nickel-chromium alloy layer with a thickness of 1-5 μm is deposited on at least part of the atomized surface 11 of the porous substrate 1 by magnetron sputtering, and the nickel-chromium alloy layer is the heat generating layer 3 .

In the step S3 of depositing the protective layer, a chemically stable and dense protective layer 4 with a thickness of 0.5-3 μm is deposited on the side of the heating layer 3 facing away from the porous substrate 1 by a thin film deposition process. The protective layer 4 blocks the formation of the aerosol matrix and the outside air from entering the heating layer 3, so as to avoid oxidation or carbonization of the heating layer 3 during energization and use, enhance the oxidation resistance and carbonization resistance of the heating layer 3, and enhance the stability of the resistance of the heating layer 3 performance, improve the cycle life of the atomizing core. In some embodiments, the thin film deposition process may be, but not limited to, a magnetron sputtering process in the thin film deposition process. In some of the specific embodiments, the protective layer 4 is formed by depositing the magnetron sputtering process, the target power density of the magnetron sputtering process is 3-12W/cm2, the sputtering pressure is 0.1-0.5Pa, and the sputtering time is 40～150min. When the thickness of the protective layer 4 is too thin, the protective layer 4 cannot play the role of blocking the aerosol-forming matrix and the outside air from entering the heating layer 3; as the thickness of the protective layer 4 increases, the protective layer 4 can gradually block the aerosol-forming matrix And the outside air enters the heating layer 3; however, when the thickness of the protective layer 4 is too thick, the stress of the protective layer 4 will increase significantly, causing the microstructure of the protective layer 4 to be destroyed during the electrification of the atomizing core, and the protective layer 4 The aerosol-forming matrix and outside air cannot be blocked from entering the heating layer 3, which weakens the oxidation resistance and carbonization resistance of the heating layer 3, affects the stability of the resistance of the heating layer 3, and shortens the cycle life of the atomizing core. Based on the above considerations, the thickness of the protective layer 4 is set to 0.5-3 μm, so that the protective layer 4 blocks the aerosol-forming matrix and external air from entering the heating layer 3 . Preferably, the thickness of the protective layer 4 is set at 0.8-1.5 μm, which can well block the aerosol-forming substrate and external air from entering the heat-generating layer 3 . Specifically, the protection layer 4 is at least any one of an aluminum oxide layer, a silicon oxide layer, an aluminum nitride layer, a silicon nitride layer, a titanium oxide layer, and a titanium nitride layer.

It can be understood that the above method for preparing the atomizing core mainly includes depositing a conductive material on at least part of the outer surface of the porous ceramic substrate by using a thin film deposition process, so as to form a heating layer on the porous ceramic substrate, and obtain a heating layer on the surface. atomizing core. In some embodiments, when the transition layer 2 and/or the protective layer 4 are not included, the corresponding film layer forming steps S1 and S3 can be correspondingly omitted.

In some other embodiments, the method for preparing the atomization core of the above-mentioned atomization core further includes:

Step S4: using the annealing and aging process to perform annealing heat treatment on the atomizing core.

In some of the embodiments, the method for preparing the atomization core of the above-mentioned atomization core further includes:

Step S5: adopting the energization aging process, supplying power to the atomizing core after the annealing heat treatment, and then heating the atomizing core after the annealing heat treatment, so as to perform aging treatment on the microstructure of the heating layer 3 .

In the above step S4, the annealing heat treatment is performed on the atomization core with the heating layer 3 by adopting an annealing aging process. The purpose of the annealing heat treatment is to eliminate the microscopic defects of the heat-generating layer 3, promote the grain growth in the micro-structure of the heat-generating layer 3, and make the heat-generating layer 3 more compact, thereby improving the stability of the resistance value of the atomizing core in the process of recycling, and then The heating power of the atomizing core is stable, the heating is uniform, and the atomization effect is good. Combined with the formation process of the heating layer 3 above, from the perspective of thermodynamic conditions, in a certain volume of the heating layer 3, the coarser the crystal grains in the heating layer 3, the smaller the total grain boundary surface area and the lower the total surface energy. Since the grain coarsening can reduce the surface energy, the heat generating layer 3 is in a relatively stable state with low free energy. To achieve a change trend towards a stable state with low free energy, it is necessary for the conductive material atoms to have a strong Diffusion ability to complete the grain boundary migration movement when the grain grows, and the high temperature annealing heat treatment makes it have this condition. Therefore, the annealing heat treatment of the atomizing core with the heat generating layer 3 can promote the growth of the crystal grains in the microstructure of the heat generating layer 3, making the heat generating layer 3 more dense, and improving the resistance of the heat generating layer 3 during energization and use. Stability, so as to improve the stability of the resistance of the atomizing core during energization and use.

In some specific embodiments, the annealing heat treatment temperature of the heat generating layer 3 of the atomizing core is 500-800° C., and the annealing heat treatment time is 5-60 minutes. In the above step S4, the annealing heat treatment process of the atomizing core is carried out in a protective gas atmosphere. Specifically, the atomizing core is placed in a tube furnace for annealing heat treatment. During the annealing heat treatment process of the atomizing core, the tube furnace is continuously filled with protective gas to prevent the heat generation layer 3 from forming during the annealing heat treatment process of the atomizing core. oxidation. The shielding gas can be, but is not limited to, nitrogen.

It can be understood that the above-mentioned transition layer 2 and protective layer 4 have the same change trend as that of the heat generating layer 3 during the annealing heat treatment. Specifically, from the perspective of thermodynamic conditions, in a certain volume of transition layer 2 or protective layer 4, the coarser the grains in the transition layer 2 or protective layer 4, the smaller the total grain boundary surface area and the lower the total surface energy . Since grain coarsening can reduce the surface energy, the transition layer 2 or protective layer 4 is in a relatively stable state with low free energy. To realize the change trend to a stable state with low free energy, conductive material atoms are required It has a strong diffusion ability to complete the migration movement of the grain boundary when the grain grows, and the high temperature annealing heat treatment makes it have this condition. Therefore, annealing the transition layer 2 or protective layer 4 of the atomization core can promote the grain growth in the microstructure of the transition layer 2 or protective layer 4, making the transition layer 2 or protective layer 4 denser, thereby improving The stability of the resistance value of the atomizing core during the cycle use.

In the above step S5, the atomization core after the annealing heat treatment is subjected to energization and aging treatment: the atomization core after the annealing heat treatment is powered, the atomization core after the annealing heat treatment is energized and then generates heat, and the microstructure of the heating layer 3 is subjected to aging treatment. aging treatment to enhance the electrical stability of the heat generating layer 3 . In some of the specific embodiments, under the atmospheric atmosphere, the heating layer 3 of the atomizing core is powered by a DC stabilized power supply, the power is 6-8W, and the power-on time is 1-20min. The purpose of performing the electrification aging treatment on the atomizing core is to improve the resistance stability of the atomizing core during electrification and use.

Compared with the prior art, the preparation method of the atomizing core in the first embodiment of the present invention adopts the annealing and aging process to perform annealing heat treatment on the heating layer 3 of the atomizing core, so that the crystal grains in the microstructure of the heating layer 3 grow, Make the heating layer 3 denser and reduce the microscopic defects of the heating layer 3 ; then, conduct energization and heating treatment on the atomizing core after the annealing heat treatment, so as to perform further aging treatment on the microstructure of the heating layer 3 . In this way, after annealing heat treatment and energized aging treatment, the atomizing core can improve and increase the resistance stability of the heating layer 3, enhance the electrical stability of the heating layer 3, and then make the heating layer 3 generate more uniform heat, preventing the atomizing core from The phenomenon that the local temperature is too high can have a good atomization effect on the aerosol-forming substrate.

In addition, it is worth noting that in Embodiment 1 of the present invention, the annealing heat treatment is first performed on the atomizing core with the heat generating layer 3 , and then the energized aging treatment is performed on the annealing heat-treated atomizing core. The order of the above-mentioned processing cannot be changed. This is to simulate the real use atmosphere of the atomizing core. Because the electrification aging treatment is generally carried out in the atmosphere, and the annealing heat treatment is usually carried out in the protective gas atmosphere. If you first Conducting electrification aging treatment on the atomizing core will lead to poor stability of the protective layer 4 and cause the heating layer 3 to be oxidized or carbonized in the atmosphere, thereby affecting the service life of the heating layer 3 . Therefore, annealing heat treatment is first performed on the atomizing core with the heating layer 3 under the protective gas atmosphere, so that the grains of the internal structure of the heating layer 3 are coarsened to reduce the surface energy, so that the transition layer 2 and the heating layer on the atomizing core The layer 3 and the protective layer 4 are in a relatively stable state with low free energy, thereby making the transition layer 2, the heating layer 3 and the protective layer 4 denser, reducing the microscopic defects of the transition layer 2, the heating layer 3 and the protective layer 4, Improve the stability of transition layer 2, heat generating layer 3 and protective layer 4. On the one hand, after annealing heat treatment, the stable and dense transition layer 2 can prevent the sodium and potassium ions of the porous ceramic substrate 1 from diffusing into the heating layer 3 under the action of an electric field, further improving the resistance stability of the heating layer 3; on the other hand, After the annealing heat treatment, the stable and dense heating layer 3 can enhance the resistance stability of the heating layer 3; on the other hand, after the annealing heat treatment, the stable and dense protective layer 4 can make the heating layer 3 and the aerosol form a matrix and air Oxygen isolation in the heat-generating layer 3 improves the anti-oxidation performance and anti-carbonization performance of the heat-generating layer 3, thereby improving the resistance stability of the heat-generating layer 3. Then, conduct electrification aging treatment on the atomizing core with heating layer 3 under atmospheric atmosphere: perform aging treatment on the microstructure of transition layer 2, heating layer 3 and protective layer 4, and further improve the resistance stability of heating layer 3.

Embodiment two

The difference between the atomizing core in the second embodiment and the atomizing core in the first embodiment is:

The atomizing core also includes two electrodes 5 for electrically connecting the heating layer 3 with the power supply device. Please refer to FIG. 4 and FIG. 5 together. In a specific embodiment, the electrode 5 is formed on the atomizing surface 11 of the porous substrate 1 through a thick film deposition process, and the thickness of the electrode 5 is 20-60 μm. On the one hand, the electrode 5 is firmly combined on the porous substrate 1 to prevent the electrode 5 from falling off under the impact of the high-temperature and high-speed aerosol-forming matrix fluid; It bears the pressing force from the metal spring pins. On the other hand, the electrode 5 has enough contact area to be electrically connected with the metal spring pins, so that the electrical connection can be easily realized with the power supply device through the metal spring pins, thereby facilitating the heating of the heating layer. 3 and achieve electrical connection with the power supply device through the electrode 5.

In some embodiments, the electrode 5 is at least any one of a gold layer, a silver layer, a platinum layer, a palladium layer, an aluminum layer, a copper layer, a gold-silver alloy layer, a silver-platinum alloy layer, and a silver-palladium alloy layer. In some of the specific embodiments, the metal paste is screen-printed on the porous substrate 1 by a screen-printing process, and the electrodes 5 are formed after drying and sintering. The metal paste is at least any one of gold, silver, platinum, palladium, aluminum, copper, gold-silver alloy, silver-platinum alloy, and silver-palladium alloy to form the electrode 5 on the porous substrate 1 .

Please refer to FIG. 3 and FIG. 4 in conjunction. In some implementations, the electrodes 5 are arranged in pairs and spaced apart on the first region 11a on the atomizing surface 11, and the heat generating layer 3 is at least covered on the second region 11a on the atomizing surface 11. Area 11b, the second area 11b is the area outside the first area 11a on the atomizing surface 11, so that the first area 11a and the second area 11b are continuous areas on the atomizing surface 11, and the heat generating layer 3 includes The heating part 31 of the second region 11b on the atomizing surface 11 of the porous substrate 1, the first connecting part 32 formed on at least part of the surface of one of the electrodes 5, and the second connecting part 33 formed on at least part of the surface of the other electrode 5 , the first connecting portion 32 and the second connecting portion 33 are respectively connected to the heat generating portion 31 . The heating layer 3 is electrically connected to the corresponding electrode 5 through surface-to-surface contact to avoid poor contact between the electrode 5 and the heating layer 3 , thereby improving the stability and reliability of power supply to the heating layer 3 .

Please refer to FIG. 3 and FIG. 4 in conjunction. In some embodiments, the electrodes 5 are arranged in pairs and spaced apart on the first region 11a on the atomizing surface 11, and the transition layer 2 is formed on the second region 11b on the atomizing surface 11. , the heat generating layer 3 is covered on the side of the transition layer 2 facing away from the porous substrate 1 . It can be understood that in this embodiment, the second area 11b is also an area on the atomizing surface 11 outside the first area 11a, so that the first area 11a and the second area 11b are continuous areas on the atomizing surface 11 . The heat generation layer 3 includes a heat generation portion 31 formed on the side of the transition layer 2 away from the porous substrate 1, a first connection portion 32 formed on at least part of the surface of one of the electrodes 5, and a second connection portion 32 formed on at least part of the surface of the other electrode 5. The part 33, the first connecting part 32, and the second connecting part 33 are respectively connected to the heating part 31. The heating layer 3 is electrically connected to the corresponding electrode 5 through surface-to-surface contact to avoid poor contact between the electrode 5 and the heating layer 3 , thereby improving the stability and reliability of power supply to the heating layer 3 .

Please refer to FIG. 4 and FIG. 5 in conjunction. In some embodiments, the thickness of the electrode 5 is greater than the sum of the thicknesses of the transition layer 2, the heat generating part 31 and the protective layer 4, and a groove 6 can be formed between the two electrodes 5. In the groove 6, the transition layer 2, the heating part 31 and the protective layer 4 are sequentially stacked from bottom to top from the inner bottom surface of the groove 6, and the transition layer 2, the heating part 31 and the protective layer 4 are accommodated and positioned on the two electrodes. In the groove 6 between 5, it is beneficial to enhance the stability of the transition layer 2, the heating part 31 and the protective layer 4 on the porous substrate 1.

Please refer to FIG. 4 , in a specific embodiment, the heat generating layer 3 is at least partially formed on the electrode 5 .

Please refer to FIG. 4 , in some specific embodiments, the first connecting portion 32 includes a first side portion 321 extending from the side of the heating portion 31 close to one of the electrodes 5 and bent along the thickness direction of the electrode 5 , The second connecting portion 33 includes a second side portion 331 extending from the side of the heating portion 31 close to the other electrode 5 and extending along the thickness direction of the electrode 5 . The first side portion 321 and the second side portion 331 are respectively combined with on the corresponding side of the corresponding electrode 5 . The first side part 321 and the second side part 331 can be respectively combined with the corresponding side of the corresponding electrode 5, and the heating layer 3 can be electrically connected with the corresponding electrode 5 through the surface-to-surface contact form, so as to avoid the occurrence of the electrode 5 and the heating layer 3. Poor contact, thereby improving the stability and reliability of power supply to the heating layer 3 .

Please refer to FIG. 4 in combination. In some of the more specific embodiments, the first connection part 32 also includes a first connection part 322 formed on the side of one of the electrodes 5 away from the porous substrate 1, and the second connection part 33 also includes a In the second bonding portion 332 on the side of the other electrode 5 away from the porous substrate 1, the corresponding side of the first bonding portion 322 is connected to the corresponding side of the first side portion 321, and the corresponding side of the second bonding portion 332 is connected to the corresponding side of the second bonding portion 332. Corresponding sides of the second side portion 331 are connected. On the one hand, the contact area between the electrode 5 and the heating layer 3 is increased, which is conducive to improving the stability of the power supply from the electrode 5 to the heating layer 3; on the other hand, the contact area between the electrode 5 and the heating layer 3 is increased, thereby reducing heat generation. The contact resistance between the layer 3 and the electrode 5 is conducive to concentrating the heating area on the heating part 31; on the other hand, it can enhance the adhesion of the heating layer 3, so that the heating layer 3 is more firmly combined with the porous substrate 1 and the electrode 5. Specifically, the atomizing surface 11 in the above embodiment is a plane.

It can be understood that the heat generation part 31, the first connection part 32 and the second connection part 33 are formed at one time when the heat generation layer 3 is formed, and the first connection part 32 does not include the first joint part 322, and the second connection part 33 does not include In the case of the second joint portion 332, it is only necessary to perform masking treatment on the side of the electrode 5 away from the porous substrate 1 when the heat generating layer 3 is formed by a thin film deposition process, so that the heat generating layer 3 cannot be deposited and formed on the electrode 5 away from the porous substrate 1. side.

Embodiment 2 of the present invention also provides an atomizer, and the atomizer includes the atomizing core provided in any one of the above embodiments. Since the atomizer has all the technical features of the atomizing core provided by any of the above embodiments, it has the same technical effect as the atomizing core.

Embodiment 2 of the present invention also provides an aerosol generating device, which includes the atomizing core provided in any of the above embodiments or the atomizer provided in any of the above embodiments. Since the aerosol generating device has all the technical features of the atomizing core or atomizer provided by any of the above embodiments, it has the same technical effect as the atomizing core.

Embodiment 2 of the present invention also provides a method for preparing the above-mentioned atomizing core. The difference between the method for preparing the atomizing core in Embodiment 2 of the present invention and the method for preparing the atomizing core in Embodiment 1 is that:

The atomization core preparation method of the above atomization core also includes:

Step S0 : Electrode fabrication: screen printing metal paste on the porous substrate 1 by screen printing, drying and sintering to form the electrode 5 . It can be understood that in other implementation manners, the electrode 5 can also be formed in other ways.

In some of these embodiments, before the step of depositing the transition layer, the porous substrate 1 screen-printed with the electrode 5 is placed in a vacuum chamber, and the vacuum is evacuated to 0.003Pa, and the porous substrate 1 is subjected to a Kaufmann-type ion source pair. Ion cleaning 2 ~ 10min.

Embodiment three

The difference between the atomizing core in the third embodiment and the atomizing core in the second embodiment is that the atomizing surface 11 is not a plane. Specifically, please refer to FIG. 6 and FIG. 7, a first concave portion 13 and a second concave portion 14 are respectively concavely formed on one surface of the porous matrix 1, and the first concave portion 13 and the second concave portion 14 are arranged at intervals to The part between the first depression 13 and the second depression 14 forms a raised portion 12, the atomizing surface 11 includes a first surface 11c where the raised portion 12 is away from the porous matrix 1, and the first depression 13 is away from the porous base 1 The second surface 11d of the second concave portion 14 is away from the third surface 11e of the porous matrix 1, the first transition surface 11f connecting the first surface 11c and the second surface 11d, and the first transition surface 11f connecting the first surface 11c and the third surface 11e The second transition surface 11g. One of the electrodes 5 is deposited and formed in the first recessed portion 13, the other electrode 5 is deposited and formed in the second recessed portion 14, the heating portion 31 is deposited and formed on the first surface 11c of the raised portion 12, and the two electrodes 5 The upper end surface is higher than the upper end surface of the heat generating part 31 .

Embodiment four

The difference between the atomizing core in Embodiment 4 and the atomizing core in Embodiment 3 is that: the upper end faces of the two electrodes 5 are flush with the lower end faces of the heating layer 3 , and the heating layer 3 is formed on the porous substrate 1 and the electrodes 5 A continuous sheet-like structural layer. Specifically, referring to FIG. 8 , the heating layer 3 includes a heating portion 31 formed in the second region 11 b on the atomizing surface 11 of the porous substrate 1 , and a first connecting portion 32 formed on at least part of the surface of one of the electrodes 5 , The second connecting portion 33 formed on at least part of the surface of the other electrode 5 , the first connecting portion 32 and the second connecting portion 33 are respectively connected to the heating portion 31 . The first connection part 32 includes a first joint part 322 formed on the side of one electrode 5 away from the porous substrate 1, and the second connection part 33 includes a second joint part formed on the side of the other electrode 5 away from the porous substrate 1 332. Corresponding sides of the first combining portion 322 are connected to corresponding sides of the heating portion 31 , and corresponding sides of the second combining portion 332 are connected to corresponding sides of the heating portion 31 . That is to say, the first connecting portion 32 may not include the first side portion 321, the second connecting portion 33 may not include the second side portion 331, and the first connecting portion 322 of the first connecting portion 32 is respectively connected to one of the electrodes 5 and The heating part 31 and the second connecting part 332 of the second connection part 33 are respectively connected to the other electrode 5 and the heating part 31 . On the one hand, the contact area between the electrode 5 and the heating layer 3 is increased, which is conducive to improving the stability of the power supply from the electrode 5 to the heating layer 3; on the other hand, the contact area between the electrode 5 and the heating layer 3 is increased, thereby reducing heat generation. The contact resistance between the layer 3 and the electrode 5 is conducive to concentrating the heating area on the heating part 31; on the other hand, it can enhance the adhesion of the heating layer 3, so that the heating layer 3 is more firmly combined with the porous substrate 1 and the electrode 5. Specifically, the atomizing surface 11 in the above embodiment is a plane.

Experimental example

In order to make the above-mentioned implementation details and operations of the present invention clearly understood by those skilled in the art, and to significantly reflect the improved performance of the atomizing core preparation method of the present invention, the following is a specific implementation of the atomizing core preparation method of the present invention through specific experimental examples The process is illustrated with an example.

Experimental example 1

1) The silver-palladium metal paste is screen-printed on the porous substrate 1 by a screen-printing process, and the electrode 5 is formed after drying and sintering. Among them, the drying temperature of the electrode 5 is 80°C, the drying time of the electrode 5 is 20 minutes, and the sintering condition is to keep the temperature environment at 910°C for 20 minutes;

2) Put the porous substrate 1 screen-printed with silver-palladium metal electrodes 5 into a magnetron sputtering vacuum chamber, evacuate to 0.003Pa, and use a Kaufmann-type ion source to perform ion cleaning on the substrate for 5 minutes. The power of the ion source is 200W;

3) A magnetron sputtering process is used to directly deposit the heating layer 3 on the outer surface of the ion-cleaned porous substrate 1 . Among them, the mass ratio of Ni/(Ni+Cr) in the nickel-chromium alloy target used is 80%, the sputtering power density of the nickel-chromium alloy target is 10W/cm ² , the sputtering pressure is 0.3Pa, and the sputtering time for 30min.

The thickness of the heat-generating layer 3 deposited on the porous substrate 1 in Experimental Example 1 was tested by using a procedural instrument, and the thickness of the heat-generating layer 3 was measured to be 1 μm. The atomizing core prepared in Experimental Example 1 is marked as S-1, and the atomizing core S-1 is assembled with a battery and a pod to form an electronic cigarette, and a simulated smoking test is performed on an electronic cigarette smoking machine. After the test, the atomizing core S-1 was taken out to measure the change of its resistance value. It can be clearly seen from Figure 9 that in the first 3000 cycles, the resistance value of the atomizing core S-1 changed significantly at the beginning of the test, and the range of subsequent resistance value changes decreased significantly. The reason for the obvious change in the resistance value of the atomizing core S-1 in the initial cycle test: on the one hand, under the high temperature condition, the sodium and potassium ions in the porous substrate 1 penetrate into the heating layer 3 under the action of the electric field, making the microcosm of the heating layer 3 The structure has changed; on the other hand, it is due to carbonization or oxidation of the heating layer 3 and the aerosol-forming matrix or oxygen in the air under high temperature conditions.

Experimental example 2

The difference between Experimental Example 2 and Experimental Example 1 is that the time for magnetron sputtering of the heating layer 3 is different. The sputtering time in Experimental Example 2 is 60 minutes to increase the thickness of the heating layer 3 deposited on the porous substrate 1 . The thickness of the heating layer 3 in Experimental Example 2 was measured to be 3 μm by using a step meter, and the atomizing core prepared in Experimental Example 2 was marked as S-2. As in Experimental Example 1, the electronic cigarette was assembled into a simulated smoking test on the electronic cigarette smoking machine, and the resistance value change of the atomizing core was measured after the test.

Experimental example 3

The difference between Experimental Example 3 and Experimental Example 1 is that the time for magnetron sputtering of the heating layer 3 is different, and the sputtering time in Experimental Example 3 is 90 minutes to increase the thickness of the heating layer 3 deposited on the porous substrate 1 . The thickness of the heat generating layer 3 in Experimental Example 3 was measured to be 5 μm by using a step meter, and the atomizing core prepared in Experimental Example 3 was marked as S-3. As in Experimental Example 1, the electronic cigarette was assembled into a simulated smoking test on the electronic cigarette smoking machine, and the resistance value change of the atomizing core was measured after the test.

Experimental example 4

The difference between this experimental example and experimental example 2 is: before depositing the heating layer 3, the silver-palladium metal electrode 5 screen-printed on the porous substrate 1 is covered by a mask, and then at least part of the outer surface of the porous substrate 1 An aluminum nitride transition layer 2 is deposited to prevent aluminum nitride from being deposited on the silver-palladium metal electrode 5 . Specifically, aluminum nitride is deposited on the porous substrate 1 using a magnetron sputtering process. Among them, the reaction gas is nitrogen, argon is the working gas, the nitrogen/argon gas flow ratio is 1.2, the sputtering pressure is 0.35Pa, the metal aluminum target sputtering power density is 8W/cm ² , and the sputtering time is 20min. The thickness of the aluminum nitride transition layer 2 in Experimental Example 4 was measured to be 0.1 μm by using a step meter. After the aluminum nitride transition layer 2 is deposited, the heat generating layer 3 is continuously deposited on the side of the aluminum nitride transition layer 2 facing away from the porous substrate 1 using the same process steps as in Experimental Example 1. At the same time, the thickness of the heating layer 3 in Experimental Example 4 was measured to be 3 μm by using the same instrument and testing method as in Experimental Example 1. In addition, the atomizing core prepared in Experimental Example 4 is marked as S-4, and the cycle reliability test of the atomizing core S-4 is carried out by the same method as in Experimental Example 1, and its resistance value is measured.

Experimental example 5

The difference between Experimental Example 5 and Experimental Example 4 lies in that the time for magnetron sputtering the transition layer of aluminum nitride 2 is different, and the sputtering time is 50 minutes. The thickness of the aluminum nitride transition layer 2 in Experimental Example 5 was measured to be 0.5 μm by using a step meter, and the atomization core prepared in Experimental Example 5 was marked as S-5. Using the same method as in Experimental Example 1, the cycle reliability test was carried out on the atomizing core S-5, and its resistance value was measured.

Experimental example 6

The difference between Experimental Example 6 and Experimental Example 4 lies in that the time for magnetron sputtering the aluminum nitride transition layer 2 is different, and the sputtering time is 100 min. The thickness of the aluminum nitride transition layer 2 in Experimental Example 6 was measured to be 1 μm by using a step meter, and the atomizing core prepared in Experimental Example 6 was marked as S-6. Using the same method as in Experimental Example 1, the cycle reliability test was carried out on the atomizing core S-6, and its resistance value was measured.

Experimental example 7

The difference between Experimental Example 7 and Experimental Example 5 is that an aluminum oxide protective layer is deposited on the heating layer 3, that is, after the heating layer 3 is deposited in Experimental Example 5, the magnetron sputtering process is used to continue to place the heating layer 3 away from the porous substrate 1 A protective layer of aluminum oxide is deposited on one side. Before magnetron sputtering the aluminum oxide protective layer, a mask is used to shield the silver-palladium metal electrode 5 screen-printed on the porous substrate 1 to prevent aluminum oxide from being deposited on the silver-palladium metal electrode 5 . Specifically, a magnetron sputtering process is used to deposit the aluminum oxide protective layer. The reactive gas of magnetron sputtering is oxygen, argon is the working gas, the gas flow ratio of oxygen/argon is 1.5, the sputtering pressure is 0.4Pa, and the metal aluminum The sputtering power density of the target is 9W/cm ² , and the sputtering time is 40min. The thickness of the aluminum oxide protective layer in Experimental Example 7 was measured to be 0.5 μm by using a step meter, and the atomizing core prepared in Experimental Example 7 was marked as S-7. Using the same method as in Experimental Example 1, the cycle reliability test was carried out on the atomizing core S-7, and its resistance value was measured.

Experimental example 8

The difference between Experimental Example 8 and Experimental Example 7 is that the time for magnetron sputtering the aluminum oxide protective layer is different, and the sputtering time is 90 minutes. The thickness of the aluminum oxide protective layer in Experimental Example 8 was measured to be 1.5 μm by using a step meter, and the atomizing core prepared in Experimental Example 8 was marked as S-8. Using the same method as in Experimental Example 1, the cycle reliability test was carried out on the atomizing core S-8, and its resistance value was measured.

Experimental example 9

The difference between Experimental Example 9 and Experimental Example 7 is that the time for magnetron sputtering of the aluminum oxide protective layer is different, and the sputtering time is 150 minutes. The thickness of the aluminum oxide protective layer in Experimental Example 9 was measured to be 3 μm by using a step meter, and the atomizing core prepared in Experimental Example 9 was marked as S-9. Using the same method as in Experimental Example 1, the cycle reliability test was carried out on the atomizing core S-9, and its resistance value was measured.

Experiment 10

The difference between Experimental Example 10 and Experimental Example 8 is that: the atomizing core prepared in Experimental Example 8 was placed in a tube furnace for annealing heat treatment. Wherein, the protective gas in the tube furnace is nitrogen, the annealing temperature is 500° C., and the annealing time is 10 min. The annealed atomizing core in Experimental Example 10 is marked as S-10, and the cycle reliability test of atomizing core S-10 is carried out by the same method as Experimental Example 1, and its resistance value is measured.

Experiment 11

The difference between Experimental Example 11 and Experimental Example 10 is that the annealing temperature is different, and the annealing temperature is 700°C. The annealed atomizing core in Experimental Example 11 is marked as S-11, and the cycle reliability test of atomizing core S-11 is carried out by the same method as Experimental Example 1, and its resistance value is measured.

Experiment 12

The difference between Experimental Example 12 and Experimental Example 10 is that the annealing temperature is different, and the annealing temperature is 800°C. The annealed atomizing core in Experimental Example 12 is marked as S-12, and the cycle reliability test of atomizing core S-12 is carried out by the same method as Experimental Example 1, and its resistance value is measured.

Experiment 13

The difference between Experimental Example 13 and Experimental Example 11 is that: the atomizing core prepared in Experimental Example 11 is subjected to energization, heating and aging treatment. Among them, the power supply used in the energization and heating aging treatment is a DC stabilized power supply with a power of 5W. After energizing for 2s, stop for 5s, then continue to energize for 2s and stop for 5s, a total of 100 cycles are performed. The atomizing core after energizing, heating and aging treatment in Experimental Example 13 is marked as S-13, and the cycle reliability test of atomizing core S-13 is carried out by the same method as Experimental Example 1, and its resistance value is measured.

Experiment 14

The difference between Experimental Example 14 and Experimental Example 13 is that the energized power is 7W. The atomizing core after energized heating and aging treatment in Experimental Example 14 is marked as S-14, and the cycle reliability test of atomizing core S-14 is carried out by the same method as in Experimental Example 1, and its resistance value is measured.

Experiment 15

The difference between Experimental Example 15 and Experimental Example 13 is that the energized power is 9W. The atomizing core after electrification heating aging treatment in Experimental Example 15 is marked as S-15, and the cycle reliability test of atomizing core S-15 is carried out by the same method as Experimental Example 1, and its resistance value is measured.

Correlative performance test of atomizing core:

The atomizing cores in Experimental Example 1 to Experimental Example 15 were subjected to cycle reliability tests respectively, and their resistance values were measured. The test results are shown in Table 1 below.

Table 1 The data table of the resistance value of the atomizing core cycle test in Experimental Example 1 to Experimental Example 15

It should be noted that the change resistance value of the total cycle in Table 1 refers to the difference between the resistance value of the test sample after the 3000th cycle test and the initial resistance value of the test sample, and the change resistance value of the total cycle in Table 1 refers to The ratio of the above-mentioned change resistance value of the test sample to the initial resistance value of the test sample. It can be understood that the smaller the change resistance value of the total cycle and/or the smaller the change resistivity of the total cycle, it can be judged that the change of the resistance value after the cycle test is reduced, and the resistance stability of the test sample in the cycle test is higher.

It should be noted that the cycle test data of atomizing core S-1 to atomizing core S-15 in Table 1 are the data obtained through the test of one test sample. Except atomizing core S-1 to atomizing core S-3, the initial resistance values are different because they have heat-generating layers 3 with different thicknesses. Among the other atomizing cores, before the cyclic test, the comparative example of controlling a single variation will select test samples with similar initial resistance values from multiple test samples in the same batch, for example: atomizing core S-4 to atomizing core S-6 is controlled as a single change in the thickness of the transition layer 2, and the test samples with relatively similar initial resistance values are selected from the multiple test samples of the atomizing core S-2 with the heating layer 3 thickness of 3 μm in the same batch.

Combining Figure 9, Figure 11 and Table 1, it can be seen that in the first 3000 cycles, the resistance value of the atomizing core S-1 in Experimental Example 1 changes very obviously, and the change resistance value of the cycle test reaches 1.21Ω, and the change resistance The rate reached 77.6%. The reason why the resistance value of the atomizing core S-1 in Experimental Example 1 changes significantly during the cycle test: on the one hand, it is because the sodium and potassium ions in the porous substrate 1 penetrate into the heating layer 3 under the action of the electric field under high temperature conditions, The microstructure of the heating layer 3 changes, and the sodium and potassium ions in the porous substrate 1 penetrate into the heating layer 3 under the action of the electric field; Oxygen in the air is carbonized or oxidized.

Combining Figure 9, Figure 11 and Table 1, it can be seen that the atomizing core S-1 in Experimental Example 1 has a thickness of heating layer 3 of 1 μm, and its initial resistance value is 1.56Ω, and the atomizing core in Experimental Example 2 S-2, the thickness of the heating layer 3 is 3 μm, and its initial resistance value is 1.25Ω, and the atomizing core S-3 in Experimental Example 3, the thickness of the heating layer 3 is 5 μm, and its initial resistance value is 1.07Ω , because the thickness of the heating layer 3 in Experimental Example 1 to Experimental Example 3 is different, the corresponding initial resistance value will also be different accordingly: the thicker the heating layer 3 is, the lower the initial resistance value is. In this way, the initial resistance value of the atomizing core can be adjusted by changing the thickness of the heating layer 3 .

Combining with Figure 11 and Table 1, it can also be seen that the atomizing core S-1 in Experimental Example 1 has a heat generating layer 3 with a thickness of 1 μm, a changing resistance value of 1.21Ω in a cycle test, and a changing resistivity of 77.6%. For the atomizing core S-2 in Experimental Example 2, the thickness of the heat-generating layer 3 is 3 μm, the changing resistance value of the cycle test is 0.67Ω, and the changing resistivity is 53.6%, and the atomizing core S-2 in Experimental Example 3 is 3. The thickness of the heating layer 3 is 5 μm, and the change resistance value of the cycle test is 0.54Ω, and the change resistance rate is 50.5%. Because the heat generation layer 3 has different thicknesses, the thicker the heat generation layer 3 is, the greater the thickness of the heat generation layer 3 is, the greater the thickness of the heat generation layer 3 after the cycle test. The resistance change is reduced. This is because the heating layer 3 is formed on the porous substrate 1 by thin film deposition. If the surface roughness of the porous substrate 1 is relatively large and the heating layer 3 is relatively thin, the heating layer 3 is discontinuous and loosely distributed. The heat generating layer 3 is easily oxidized or carbonized, which affects the stability of its resistance value. The thicker the heating layer 3 is, the distribution of the heating layer 3 is continuous and dense, which improves the oxidation resistance or carbonization resistance, thereby making the resistance value more stable.

Combining the test data in Figure 9, Figure 12 and Table 1, it can be seen that, taking the atomizing core S-2 in Experimental Example 2 as a comparative example, the changing resistance value of the cycle test is 0.67Ω, and the changing resistivity is 53.6%. The changing resistance value of atomizing core S-4 in experimental example 4 is 0.53Ω, and the changing resistivity is 42.7%. The changing resistance value of atomizing core S-5 in experimental example 5 is 0.4Ω, changing The resistivity is 32.5%, and the changing resistance value of the atomizing core S-6 cycle test in Experimental Example 6 is 0.47Ω, and the changing resistivity is 37.9%. In the first 3000 cycle tests of the atomizing core, its resistance value The changes are all smaller than the resistance value of the atomizing core S-2 atomizing core in Experimental Example 2, indicating that the setting of the aluminum nitride transition layer 2 improves the resistance stability of the heating layer 3 of the atomizing core. This is because the aluminum nitride transition layer 2 can reduce the roughness of the surface of the porous substrate 1 and improve the continuity of the heat generating layer 3. At the same time, the aluminum nitride transition layer 2 can also block the penetration of sodium and potassium ions in the porous substrate 1 into the heat generating layer 3, The purpose of improving and enhancing the resistance stability of the heating layer 3 of the atomizing core is achieved.

Combining Figure 12 and Table 1, it can be seen that, taking the atomizing core S-2 in Experimental Example 2 as a comparative example, the changing resistance value of the cycle test is 0.67Ω, and the changing resistivity is 53.6%. Experimental Example 4 to Experimental Example Among atomizing core S-4, atomizing core S-5 and atomizing core S-6 in 6, the thickness of aluminum nitride transition layer 2 of atomizing core S-4 in experimental example 4 is 0.1 μm, and its cycle The tested variable resistance value was 0.53Ω, the variable resistivity was 42.7%, and the stability of the resistance value was improved; the thickness of the aluminum nitride transition layer 2 of the atomizing core S-5 in Experimental Example 5 was 0.5 μm, and the cycle test The variable resistance value is 0.4Ω, the variable resistivity is 32.5%, and the stability of the resistance value is further improved. The aluminum nitride transition layer 2 of the atomizing core S-6 in Experimental Example 6 has a thickness of 1 μm, and the change resistance value of the cycle test is 0.47Ω, and the change resistivity is 37.9%, and the stability of the resistance value decreases instead. This is because the aluminum nitride transition layer 2 can block sodium and potassium ions in the porous substrate 1 from penetrating into the heating layer 3 under an electric field. The aluminum nitride transition layer 2 is within a certain thickness range, and the thicker the thickness, the better the barrier effect. However, as the thickness of the aluminum nitride transition layer 2 increases to 1 μm, the stress of the aluminum nitride transition layer will increase significantly, causing the microstructure of the heating layer 3 to be destroyed during the cycle test, resulting in the resistance value of the atomizing core cycle test Stability decreased instead.

Combining the test data in Figure 9, Figure 13 and Table 1, it can be seen that, taking the atomizing core S-5 in Experimental Example 5 as a comparative example, the changing resistance value of the cycle test is 0.4Ω, and the changing resistivity is 32.5%. For atomizing core S-7 in Experimental Example 7, after 3000 cycles of testing, the changing resistance value of the cycle test is 0.34Ω, and the changing resistivity is 27%. For atomizing core S-8 in Experimental Example 8, after After 3000 cycle tests, the change resistance value of the cycle test is 0.24Ω, and the change resistance rate is 18.9%. For the atomizing core S-9 in Experimental Example 9, after 3000 cycle tests, the change resistance value of the cycle test is is 0.29Ω, and the change resistivity is 22.7%. The resistance value change of atomizing core S-7, atomizing core S-8 and atomizing core S-9 in Experimental Example 7 to Experimental Example 9 is obviously smaller than that of Experimental Example 5 The atomizing core S-5 in the middle is due to the setting of the aluminum oxide protective layer, which isolates the heating layer 3 from the aerosol forming matrix and the oxygen in the air, so as to avoid the influence of the heating layer 3 being carbonized and oxidized by high temperature during long-term use. The stability of the resistance value improves the resistance stability of the heating layer 3 of the atomizing core, and increases the cycle life of the atomizing core.

Combining Figure 13 and Table 1, it can be seen that, taking the atomizing core S-5 in Experimental Example 5 as a comparative example, the changing resistance value of the cycle test is 0.4Ω, and the changing resistivity is 32.5%. Experimental Example 7 to Experimental Example Among atomizing core S-7, atomizing core S-8 and atomizing core S-9 in 9, the aluminum oxide protective layer thickness of atomizing core S-7 in Experimental Example 7 is 0.5 μm, and the cycle test The changing resistance value is 0.34Ω, and the changing resistivity is 27%. The variable resistance value is 0.24Ω, and the variable resistivity is 18.9%, and the resistance value stability of the cycle test is further improved. The aluminum oxide protective layer of atomizing core S-9 in Experimental Example 9 has a thickness of 3 μm, and its resistance value in the cycle test is 0.29Ω, and the change resistivity is 22.7%. The stability of the resistance value in the cycle test decreases instead. This is because the aluminum oxide protective layer is within a certain thickness range, and the thicker the aluminum oxide protective layer is, the higher the density is, which can better isolate the heating layer 3 from the aerosol-forming matrix and oxygen in the air. However, as the thickness of the alumina protective layer increases to 3 μm, the stress of the alumina protective layer will increase significantly, resulting in the destruction of the microstructure of the alumina protective layer during the cycle test, resulting in the stability of the resistance value of the atomizing core cycle test Instead, it declined.

Combining the test data in Figure 9, Figure 14 and Table 1, it can be seen that taking the atomizing core S-8 in Experimental Example 8 as a comparative example, the changing resistance value of the cycle test is 0.24Ω, and the changing resistivity is 18.9%. For atomizing core S-10 in Experimental Example 10, after 3000 cycles of testing, the changing resistance value of the cycle test is 0.18Ω, and the changing resistivity is 13.5%. For atomizing core S-11 in Experimental Example 11, in After 3000 cycle tests, the change resistance value of the cycle test is 0.13Ω, and the change resistance rate is 9.7%. For the atomizing core S-12 in Experimental Example 12, after 3000 cycle tests, the change resistance value of the cycle test is is 0.21Ω, and the change resistivity is 15.4%. The change of the resistance value of atomizing core S-10, atomizing core S-11 and atomizing core S-12 in Experimental Example 10 to Experimental Example 12 is obviously smaller than that of Experimental Example 8 In the atomizing core S-8, this is because the annealing heat treatment can reduce the microscopic defects of the transition layer 2, the heating layer 3 and the protective layer 4, so that the crystal grains in the microstructure of the heating layer 3 grow up, and the heating layer 3 is made more Dense, so as to improve the stability of the heating layer 3 cycle test resistance of the atomizing core.

Combining the test data in Figure 14 and Table 1, it can be seen that, taking the atomizing core S-8 in Experimental Example 8 as a comparative example, the changing resistance value of the cycle test is 0.24Ω, and the changing resistivity is 18.9%. Experimental Example 10 Among the atomizing core S-10, atomizing core S-11 and atomizing core S-12 in Experimental Example 12, the changing resistance value of the atomizing core S-10 in Experimental Example 10 is 0.18Ω , the change resistivity is 13.5%, the resistance value stability of the cycle test of the atomizing core S-10 in Experimental Example 10, compared to the resistance value of the cycle test of the atomizing core S-8 without annealing heat treatment in Experimental Example 8 The stability has not been significantly improved. This is because the temperature of 500° C. is too low to reach the energy required for grain growth in the microstructure of the heating layer 3 . In Experimental Example 11, the annealing temperature was increased to 700°C. For the atomizing core S-11 in Experimental Example 11, the changing resistance value of the cycle test was 0.13Ω, and the changing resistivity was 9.7%. The atomizing core in Experimental Example 11 The resistance stability of the S-11 cycle test is significantly improved. However, as the annealing temperature was further increased to 800°C in Experimental Example 12, the changing resistance value of the atomizing core S-12 in Experimental Example 12 was 0.21Ω, and the changing resistivity was 15.4%. The resistance stability of the atomizing core S-12 cycle test decreases instead, because too high temperature will destroy the microstructure of the transition layer 2, heating layer 3 or protective layer 4, and affect the stability of the resistance of the heating layer 3 cycle test.

Combining the test data in Figure 9, Figure 15 and Table 1, it can be seen that, taking the atomizing core S-11 in Experimental Example 11 as a comparative example, the changing resistance value of the cycle test is 0.13Ω, and the changing resistivity is 9.7%. For atomizing core S-13 in Experimental Example 13, after 3000 cycles of testing, the changing resistance value of the cycle test is 0.1Ω, and the changing resistivity is 6.8%. For atomizing core S-14 in Experimental Example 14, in After 3000 cycle tests, the change resistance value of the cycle test is 0.07Ω, and the change resistance rate is 4.8%. The resistance value changes of atomizing core S-13 and atomizing core S-14 in Experimental Example 13 to Experimental Example 14 It is obviously smaller than the atomizing core S-11 in Experimental Example 11. This is because the energized heating aging treatment can improve the electrical stability of the heating layer 3 and achieve the purpose of improving and improving the stability of the high heating layer 3 cycle test resistance.

Combining the test data in Figure 10, Figure 15 and Table 1, it can be seen that, taking the atomizing core S-11 in Experimental Example 11 as a comparative example, the changing resistance value of the cycle test is 0.13Ω, and the changing resistivity is 9.7%. In the atomizing core S-13 in Experimental Example 13, the power of the heating and aging treatment was 5W, and the changing resistance value of the cycle test was 0.1Ω, and the changing resistivity was 6.8%. The atomizing core S in Experimental Example 13 The stability of the resistance value of the cycle test of -13 is not significantly improved compared with the stability of the resistance value of the cycle test of the non-annealed atomizing core S-11 in Experimental Example 11. This is because the power of the heating and aging treatment is too low, the heating value of the heating layer 3 is small, the microstructure of the heating layer 3 is improved slightly, and thus the stability of the resistance of the heating layer 3 is improved slightly. In the atomizing core S-14 in Experimental Example 14, the power of the energized heating aging treatment is 7W, the change resistance value of the cycle test is 0.07Ω, and the change resistivity is 4.8%, which can obviously improve the heating layer of the atomizing core. 3 Stability of cycle resistance. In the atomizing core S-15 in Experimental Example 15, the power of heating and aging treatment was increased to 9W, and the changing resistance value of the cycle test was 0.41Ω, and the changing resistivity was 27.7%. The heating layer of the atomizing core was 3 On the contrary, the stability of the cycle resistance decreased. This is because the power of the energization heating aging treatment is too high, the greater the heating value of the heating layer 3, the excessive heating value will destroy the microstructure of the heating layer 3, thereby reducing the stability of the resistance of the heating layer 3.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention should be included in the protection of the present invention. within range.

Claims

An atomizing core, characterized in that it comprises:

Porous substrate, at least part of the outer surface is formed with an atomization surface for heating and atomizing the aerosol-forming substrate. The sol-forming matrix can be transported to the atomizing surface through the microporous structure;

a transition layer covering at least part of the atomized surface;

A heat generating layer, which is used to heat and atomize the aerosol to form a substrate after being energized, the heat generating layer is combined on the side of the transition layer away from the porous substrate, and the heat generating layer is a nickel-chromium alloy layer; and

The protection layer is covered on the side of the heat generating layer away from the transition layer.
The atomizing core according to claim 1, characterized in that, the atomizing core further comprises two electrodes for electrically connecting the heating layer and the power supply device, and the electrodes are formed on the On the atomizing surface, the electrode is at least one of a gold layer, a silver layer, a platinum layer, a palladium layer, an aluminum layer, a copper layer, a gold-silver alloy layer, a silver-platinum alloy layer, and a silver-palladium alloy layer.
The atomizing core according to claim 1, wherein the protective layer is at least one of an aluminum oxide layer, a silicon oxide layer, an aluminum nitride layer, a silicon nitride layer, a titanium oxide layer, and a titanium nitride layer kind.
The atomizing core according to claim 1, characterized in that, the thickness of the protective layer is 0.5-3 μm.
The atomizing core according to claim 1, characterized in that, the thickness of the heating layer is 1-5 μm.
The atomization core according to claim 1, wherein the transition layer is at least one of an aluminum nitride layer, a silicon nitride layer, a chromium nitride layer, and a chromium carbide layer.
The atomizing core according to any one of claims 1 to 6, characterized in that the transition layer has a thickness of 0.1-1 μm.
The atomizing core according to claim 2, wherein the electrodes are arranged in pairs and at intervals on the first region on the atomizing surface, and the transition layer covers the first region on the atomizing surface Two areas, the second area is an area on the atomization surface outside the first area, so that the first area and the second area are continuous areas on the atomization surface, The thickness of the electrode is greater than the sum of the thickness of the heating layer and the thickness of the transition layer.
The atomizing core according to claim 8, wherein a groove is formed between the two electrodes, and the transition layer, the heat generating The heating part of the layer and the protective layer, and the thickness of the electrode is greater than the sum of the thicknesses of the transition layer, the heating part and the protective layer.
The atomizing core according to claim 8, wherein the heating layer includes a heating part formed in the second region, a first connecting part formed in at least part of the surface of one of the electrodes, and a first connecting part formed in the other electrode. A second connection portion on at least part of the surface of the electrode, the first connection portion and the second connection portion are respectively connected to the heating portion.
The atomizing core according to claim 10, wherein the first connection part comprises a first joint part formed on a side of one of the electrodes facing away from the porous substrate, and the second connection part comprises A second joint formed on the side of the other electrode away from the porous substrate, the corresponding side of the first joint is connected to the corresponding side of the heat generating part, and the corresponding side of the second joint The side edges are connected to the corresponding side edges of the heat generating part.
The atomizing core according to claim 2, characterized in that the thickness of the electrode is 20-60 μm.
An atomizer, characterized by comprising the atomizing core according to any one of claims 1-12.
An aerosol generating device, characterized by comprising the atomizing core according to any one of claims 1 to 12 or the atomizer according to claim 13.
A method for preparing an atomizing core, characterized in that it comprises the following steps:

Depositing a transition layer: depositing a transition layer on at least part of the atomized surface of the porous substrate through a thin film deposition process;

Depositing a heating layer: through a thin film deposition process, depositing a heating layer on the side of the transition layer away from the porous substrate to form a heating layer, the heating layer is a nickel-chromium alloy layer;

Depositing a protective layer: depositing a protective layer on the side of the heat generating layer away from the transition layer through a thin film deposition process.
The method for preparing the atomizing core according to claim 15, characterized in that, in the nickel-chromium alloy material of the heating layer, the mass ratio of Ni/(Ni+Cr) is 0.2-0.9.
The preparation method of the atomizing core according to claim 15, characterized in that the porosity of the porous substrate is 30%-80%, and the pore diameter of the porous substrate is 10-30 μm.