WO2023045170A1 - 一种NiO/多孔GaN谐振腔InGaN蓝光探测器及其制备方法 - Google Patents

一种NiO/多孔GaN谐振腔InGaN蓝光探测器及其制备方法 Download PDF

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WO2023045170A1
WO2023045170A1 PCT/CN2021/143370 CN2021143370W WO2023045170A1 WO 2023045170 A1 WO2023045170 A1 WO 2023045170A1 CN 2021143370 W CN2021143370 W CN 2021143370W WO 2023045170 A1 WO2023045170 A1 WO 2023045170A1
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gan
gan layer
nio
ingan
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李国强
孔德麒
王文樑
陈�胜
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South China University of Technology SCUT
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H10F71/1274—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP comprising nitrides, e.g. InGaN or InGaAlN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1276—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention belongs to the field of visible light detectors, and in particular relates to a NiO/porous GaN resonant cavity InGaN blue light detector and a preparation method thereof.
  • VLC visible light communication
  • QE quantum efficiency
  • time response of photodetectors are also important because they determine the distance and rate of data transmission.
  • photodetectors with high sensitivity and wavelength selectivity matching the emission spectrum of light sources are required.
  • silicon-based photodetectors detect blue light emitted by GaN-based white LEDs by implementing blue-filtering techniques.
  • the disadvantages of this technology are low light transmittance, high cost, and complex VLC system.
  • the broadband response of silicon-based photodetectors causes undesired interference effects between the measured signal and the background signal.
  • InGaN materials have good physical and chemical properties. It has high electron mobility, excellent thermal and chemical stability.
  • the bandgap width can be continuously adjusted from 3.4eV to 0.7eV, so that the InGaN detector can achieve continuous detection covering the entire visible light band.
  • the present invention provides a NiO/porous GaN resonant cavity InGaN blue light detector and a preparation method thereof.
  • the NiO/porous GaN resonant cavity formed by the porous GaN layer (resonator bottom mirror)/P-I-N functional layer/NiO layer (resonator top mirror) in the blue light detector of the present invention can effectively enhance blue light resonant absorption and realize high sensitivity and high bandwidth probing.
  • a NiO/porous GaN resonant cavity InGaN blue light detector comprising sequentially laminated substrate, buffer layer, porous GaN layer (resonator bottom mirror), n-GaN layer, InGaN layer, the upper surface part of the n-GaN layer Covered by an InGaN layer, the other part is an exposed part; a p-GaN layer is provided on the InGaN layer, a NiO layer (resonator top mirror) is provided on the p-GaN layer, and the upper surface of the p-GaN layer is partially covered by NiO layer covering, and the other part is an exposed part; the exposed part on the upper surface of the n-GaN layer and the exposed part on the upper surface of the p-GaN layer are provided with an electrode layer.
  • the electrode layer is not in contact with the NiO layer, and the electrode layer is not in contact with the InGaN layer.
  • n-GaN layer, the InGaN layer and the p-GaN layer form a P-I-N functional layer.
  • the upper surface of the n-GaN layer is partly covered by the InGaN layer, and the other part is exposed, which means that the InGaN layer forms a stepped horizontal platform on the n-GaN layer; the mesa on the n-GaN layer is provided with an electrode layer.
  • the upper surface of the p-GaN layer is partly covered by the NiO layer, and the other part is exposed, which means that the NiO layer forms a stepped horizontal platform on the p-GaN layer; the mesa on the p-GaN layer is provided with an electrode layer.
  • the electrode layer is a metal layer electrode
  • the buffer layer is an AlN layer, an AlGaN layer and a GaN layer stacked sequentially from bottom to top, and the AlN layer is arranged on the substrate;
  • the thickness of the porous GaN layer is 2-4 ⁇ m.
  • the pore diameter of the porous GaN layer is 50-60 nm, and the porosity is 90-95%.
  • the thicknesses of n-GaN, InGaN, and p-GaN are 600-900 nm, 150-200 nm, and 100-150 nm, respectively.
  • the thickness of the NiO layer is 30-50 nm.
  • the substrate is a Si substrate.
  • the thicknesses of the AlN layer, the AlGaN layer and the GaN layer are 300-400 nm, 300-400 nm, and 3-4 ⁇ m, respectively.
  • the n-GaN layer and the p-GaN upper metal layer electrode are respectively Ni/Au metal layers, the thickness of the Ni metal layer is 100-110 nm, and the thickness of the Au metal layer is 100-110 nm.
  • the Ni is provided on the n-GaN layer.
  • the Ni is provided on the p-GaN layer.
  • the preparation method of the NiO/porous GaN resonant cavity InGaN blue light detector comprises the following steps:
  • a buffer layer is grown on the substrate by MOCVD method, and then a GaN layer (resonator bottom mirror) is grown on the buffer layer;
  • the GaN layer is etched into a porous GaN layer by electrochemical etching, and an n-GaN layer, an InGaN layer, and a p-GaN layer are grown on the porous GaN layer by MOCVD;
  • the growth of the buffer layer on the substrate by the MOCVD method refers to the growth of the buffer layer on the substrate by the MOCVD method, and the epitaxial growth of the AlN layer, the AlGaN layer and the GaN layer from bottom to top, and the growth of the AlN layer, the AlGaN layer and the GaN layer.
  • the temperatures are 1200-1300°C, 1200-1300°C and 1100-1250°C, respectively.
  • Growing a GaN layer on the buffer layer refers to growing a GaN layer (resonator bottom mirror) on the buffer layer by MOCVD, and the temperature for growing the GaN layer is 1100-1250°C.
  • the electrochemical etching solution is a mixed solution of HF acid and absolute ethanol with a volume concentration of 49%, and the volume ratio is 1:1.
  • the pore diameter of the porous GaN layer is 50-60 nm, and the porosity is 90-95%.
  • the P-I-N functional layer is grown on the substrate by MOCVD method, and the n-GaN layer, the InGaN layer and the n-GaN layer are epitaxially grown in sequence from bottom to top, and the temperatures for growing the n-GaN layer, InGaN layer and n-GaN layer are respectively 1100 ⁇ 1250°C, 650-850°C and 1100-1250°C.
  • the drying time for the first photolithography is 40-50s, the exposure time is 8-10s, the developing time is 55-65s; the ICP etching time is 1-2h.
  • the vapor deposition rate of the metal layer electrode is 0.20-0.25 nm/min.
  • the drying time is 40-50s
  • the exposure time is 8-10s
  • the developing time is 55-65s.
  • the vapor deposition rate of the metal layer electrode is 0.20-0.25 nm/min.
  • NiO layer (resonator top mirror) is prepared, and the evaporation rate of the Ni layer is 0.20-0.25nm/min. And Ni is annealed at 550-650°C for 1-2h to form NiO.
  • NiO/porous GaN resonant cavity InGaN blue light detector in blue light detection.
  • the detector of the present invention has a NiO/porous GaN resonant cavity, which effectively enhances the resonant absorption of blue light and realizes high-sensitivity and high-bandwidth detection.
  • the AlN/AlGaN/GaN buffer layer adopted in the present invention reduces dislocation generation, reduces material defect density from 10 9 to 10 5 , and makes the material quality of the grown porous GaN layer and PIN functional layer better. Moreover, since it is difficult to directly grow InGaN, phase separation is prone to occur.
  • the invention adopts p-GaN/InGaN/n-GaN device structure, reduces phase separation, improves crystal quality of InGaN material, thereby obtains high performance (high quantum efficiency, fast response speed and high sensitivity, etc.) blue light detector.
  • the present invention manufactures NiO (resonator top mirror) through vapor deposition and annealing process to form NiO microcrystals with regular shape, uniform distribution, smooth surface and good quality, which have excellent light confinement and optical resonance characteristics.
  • a porous GaN material (resonator bottom mirror) with regular size, uniform arrangement and distribution, and good quality can be obtained through the electrochemical etching method, and the operation is simple.
  • the present invention has the following beneficial effects and advantages:
  • the present invention adopts the MOCVD high-temperature epitaxy method combined with the MOCVD low-temperature epitaxy method to grow an AlN/AlGaN/GaN buffer layer on a Si substrate by a high-temperature method, and then grow a P-I-N functional layer by a low-temperature method.
  • the preparation method of the invention has the characteristics of simple process, time saving and high efficiency, and low energy consumption, and the quality of the prepared material is good, which is beneficial to large-scale production.
  • the present invention obtains a high-quality porous GaN layer, that is, a bottom mirror of a resonant cavity, through electrochemical etching, and obtains a porous GaN material with regular holes, uniform arrangement and distribution, and good quality.
  • the method has simple process and is favorable for large-scale production.
  • the present invention proposes a method for preparing the top mirror of a resonant cavity by combining NiO layer with evaporation and annealing, and obtains NiO microcrystals with regular shape, uniform distribution, smooth surface and good quality, which have excellent light confinement and optical resonance feature.
  • the NiO/porous GaN resonant cavity InGaN blue light detector of the present invention has a NiO/porous GaN resonant cavity structure, which can greatly enhance blue light resonant absorption and realize high-sensitivity and high-bandwidth detection.
  • Fig. 1 is the structural sectional schematic diagram of NiO/porous GaN resonant cavity InGaN blue light detector provided by the present invention
  • Fig. 2 is the schematic plan view of the top view of the NiO/porous GaN resonator InGaN blue light detector provided by the present invention
  • Fig. 3 is the I-V graph of the NiO/porous GaN resonant cavity InGaN blue light detector prepared by embodiment 1;
  • Example 4 is a graph of the spectral response of the NiO/porous GaN resonant cavity InGaN blue light detector prepared in Example 1.
  • NiO/porous GaN resonant cavity InGaN blue light detector structure cross-sectional schematic diagram as shown in Figure 1 of the present invention comprises successively stacked substrate 1, buffer layer 2, porous GaN layer 3 (resonant cavity bottom mirror), n-GaN layer 4 , InGaN layer 5, the upper surface of the n-GaN layer 4 is partially covered by the InGaN layer 5, and the other part is exposed; the InGaN layer 5 is provided with a p-GaN layer 6, and the p-GaN layer 6 is provided with There is a NiO layer 7 (resonator top mirror), the upper surface of the p-GaN layer 6 is partly covered by the NiO layer 7, and the other part is an exposed part; the exposed part on the upper surface of the n-GaN layer 4 and the p-GaN layer 6 The exposed part of the surface is provided with an electrode layer 8; the electrode layer 8 is not in contact with the NiO layer 7.
  • Electrode layer 8 is not in contact with InGaN layer 5 .
  • the n-GaN layer 4, the InGaN layer 5 and the p-GaN layer 6 form a P-I-N functional layer.
  • the upper surface of the n-GaN layer 4 is partly covered by the InGaN layer 5, and the other part is exposed, which means that the InGaN layer 5 forms a mesa on the n-GaN layer 4; the mesa on the n-GaN layer 4 is provided with an electrode layer.
  • the upper surface of the p-GaN layer 6 is partially covered by the NiO layer 7 , and the other part is exposed, which means that the NiO layer 7 forms a mesa on the p-GaN layer 6 ; the mesa on the p-GaN layer 6 is provided with an electrode layer 8 .
  • the electrode layer 8 is a metal layer electrode
  • the buffer layer 2 is an AlN layer, an AlGaN layer and a GaN layer stacked sequentially from bottom to top, and the AlN layer is disposed on the substrate 1;
  • the thickness of the porous GaN layer 3 is 2-4 ⁇ m.
  • the pore diameter of the porous GaN layer is 50-60 nm, and the porosity is 90-95%.
  • the thicknesses of the n-GaN layer 4 , the InGaN layer 5 and the p-GaN layer 6 are 600-900 nm, 150-200 nm, and 100-150 nm, respectively.
  • the thickness of the NiO layer 7 is 30-50 nm.
  • the substrate 1 is a Si substrate.
  • the thicknesses of the AlN layer, the AlGaN layer, and the GaN layer are 300-400 nm, 300-400 nm, and 3-4 ⁇ m, respectively.
  • the metal layer electrodes on the n-GaN layer 4 and the p-GaN layer 6 are respectively Ni/Au metal layers, the thickness of the Ni metal layer is 100-110 nm, and the thickness of the Au metal layer is 100-110 nm.
  • the Ni is provided on the n-GaN layer.
  • the Ni is provided on the p-GaN layer.
  • the p-GaN layer dopant is Mg element with a concentration of (0.8-1.5) ⁇ 10 18 cm 3 .
  • the n-GaN layer dopant is Si element, and the concentration is (0.8-1.5) ⁇ 10 18 cm 3 .
  • FIG. 2 The top view schematic diagram of the NiO/porous GaN resonant cavity InGaN blue light detector provided by the present invention is shown in FIG. 2 .
  • the present embodiment provides a kind of NiO/porous GaN resonator InGaN, comprises the substrate arranged in order from bottom to top, buffer layer, porous GaN layer (resonator bottom mirror), P-I-N functional layer, NiO layer (resonator top Mirror) and metal layer electrodes;
  • the buffer layer is an AlN layer, an AlGaN layer and a GaN layer arranged in sequence from bottom to top, and the thicknesses of the AlN layer, AlGaN layer and GaN layer are 350nm, 350nm, and 3.5 ⁇ m, respectively.
  • the substrate is a Si substrate; the thickness of the porous GaN layer (resonator bottom mirror) is 3.5 ⁇ m.
  • the P-I-N functional layer is an n-GaN layer, an InGaN layer and a p-GaN layer arranged in sequence from bottom to top, and the thicknesses of the n-GaN layer, InGaN layer and p-GaN layer are 800nm, 170nm and 125nm respectively.
  • the thickness of the NiO layer is 40 nm.
  • the metal layer electrode is a Ni/Au metal layer, the Ni/Au metal layer is a Ni metal layer and an Au metal layer arranged from bottom to top, the thickness of the Ni metal layer is 105nm, and the thickness of the Au metal layer is 105nm.
  • the InGaN layer and the p-GaN layer form a mesa on the n-GaN layer; the mesa on the n-GaN layer is provided with an electrode layer.
  • the NiO layer forms a mesa on the p-GaN layer; the mesa on the p-GaN layer is provided with an electrode layer.
  • This embodiment also provides a method for preparing the NiO/porous GaN resonant cavity InGaN blue light detector, comprising the following steps:
  • a buffer layer is grown on the Si substrate by MOCVD method, and then a GaN layer (resonator bottom mirror) is grown on the buffer layer;
  • the GaN layer is etched into a porous GaN layer by electrochemical etching, and a P-I-N functional layer is grown on it by MOCVD;
  • the first photolithography is performed on the p-GaN layer. After development, the n-GaN is exposed by means of ICP etching, and Ni/Au electrodes are evaporated on it. Then carry out the second photolithography, and after development, evaporate Ni/Au electrodes on p-GaN;
  • the buffer layer means that an AlN layer, an AlGaN layer and a GaN layer are epitaxially grown on the substrate from bottom to top by MOCVD method, and the temperatures for growing the AlN layer, AlGaN layer and GaN layer are 1250°C, 1250°C and 1200°C respectively. .
  • the temperature for growing a GaN layer (resonator bottom mirror) on the buffer layer by MOCVD is 1200°C.
  • the PIN functional layer refers to the use of MOCVD method to epitaxially grow n-GaN layer, InGaN layer and p-GaN layer from bottom to top on the porous GaN layer, and grow n-GaN layer, InGaN layer and p-GaN layer
  • the temperatures were 1250°C, 700°C and 1250°C, respectively.
  • the p-GaN layer dopant is Mg element with a concentration of 1 ⁇ 10 18 cm 3 .
  • the n-GaN layer dopant is Si element with a concentration of 1 ⁇ 10 18 cm 3 .
  • the electrochemical etching solution is a mixed solution of 49% HF acid and absolute ethanol, and the volume ratio is 1:1. Electrochemical etching conditions: the power of the ultraviolet lamp is 150W; the voltage is 15V, and the etching is performed for 25min.
  • the porous GaN layer has a pore diameter of 50 nm and a porosity of 95%.
  • the conditions for the first photolithography are as follows: the drying time is 45s, the exposure time is 9s, and the developing time is 60s.
  • the evaporation rate of the metal layer electrode was 0.225 nm/min.
  • the time of ICP etching is 1.5h.
  • Ni The evaporation rate of the Ni layer was 0.225 nm/min. And Ni was annealed at 600°C for 1.5h to form NiO.
  • NiO/porous GaN resonant cavity InGaN blue light detector prepared in this embodiment was tested.
  • Fig. 3 is the dark current curve of the NiO/porous GaN resonant cavity InGaN blue light detector obtained in this embodiment. It can be seen from the figure that the electrode is made as a Schottky contact. Under a bias voltage of 2V, the dark current reaches 100nA and the photocurrent is 30 ⁇ A. The dark current is low, indicating that the carrier injection efficiency is high, and the detector epitaxy has a high-speed response in the blue light band.
  • Fig. 4 is the spectral response curve of the NiO/porous GaN resonator InGaN blue light detector obtained in this embodiment. It can be seen from the curve that at 445nm, the responsivity is 0.0492A/W. It shows that the detector has higher quantum efficiency and higher sensitivity in the blue light band.
  • the present embodiment provides a kind of NiO/porous GaN resonant cavity InGaN, comprises the substrate that arranges in order from bottom to top, buffer layer, porous GaN layer (resonant cavity bottom mirror), P-I-N functional layer, NiO layer (resonant cavity top Mirror) and metal layer electrodes, the buffer layer is AlN layer, AlGaN layer and GaN layer arranged in sequence from bottom to top, the thickness of AlN layer, AlGaN layer and GaN layer are 400nm, 400nm, 4 ⁇ m respectively.
  • the substrate is a Si substrate; the thickness of the porous GaN layer (resonator bottom mirror) is 4 ⁇ m.
  • the P-I-N functional layer is an n-GaN layer, an InGaN layer and a p-GaN layer arranged in sequence from bottom to top, and the thicknesses of the n-GaN layer, InGaN layer and p-GaN layer are 900nm, 200nm and 150nm respectively.
  • the thickness of the NiO layer is 50 nm.
  • the metal layer electrode is a Ni/Au metal layer, the Ni/Au metal layer is a Ni metal layer and an Au metal layer arranged from bottom to top, the thickness of the Ni metal layer is 110nm, and the thickness of the Au metal layer is 110nm.
  • the InGaN layer and the p-GaN layer form a mesa on the n-GaN layer; the mesa on the n-GaN layer is provided with an electrode layer.
  • the NiO layer forms a mesa on the p-GaN layer; the mesa on the p-GaN layer is provided with an electrode layer.
  • This embodiment also provides a method for preparing the NiO/porous GaN resonant cavity InGaN blue light detector, comprising the following steps:
  • a buffer layer is grown on the Si substrate by MOCVD method, and then a GaN layer (resonator bottom mirror) is grown on the buffer layer;
  • the GaN layer is etched into a porous GaN layer by electrochemical etching, and a P-I-N functional layer is grown on it by MOCVD;
  • the first photolithography is performed on the p-GaN layer. After development, the n-GaN is exposed by ICP etching, and Ni/Au electrodes are evaporated on it; and then the second photolithography is performed. Engraving, after development, evaporate Ni/Au electrodes on p-GaN;
  • the buffer layer means that an AlN layer, an AlGaN layer and a GaN layer are epitaxially grown on the substrate from bottom to top by MOCVD method, and the temperatures for growing the AlN layer, AlGaN layer and GaN layer are 1300°C, 1300°C and 1250°C respectively. .
  • the temperature for growing a GaN layer (resonator bottom mirror) on the buffer layer by MOCVD method is 1250°C.
  • the PIN functional layer means that the n-GaN layer, the InGaN layer and the p-GaN layer are epitaxially grown from bottom to top on the porous GaN layer by MOCVD method at temperatures of 1250°C, 800°C and 1250°C respectively.
  • the p-GaN layer dopant is Mg element with a concentration of 1.2 ⁇ 10 18 cm 3 .
  • the n-GaN layer dopant is Si element with a concentration of 1.2 ⁇ 10 18 cm 3 .
  • the electrochemical etching solution is a mixed solution of 49% HF acid and absolute ethanol, and the volume ratio is 1:1. Electrochemical etching conditions: the power of the ultraviolet lamp is 150W; the voltage is 20V, and the etching is performed for 30min.
  • the porous GaN layer has a pore diameter of 55 nm and a porosity of 92.5%.
  • the drying time is 50s
  • the exposure time is 10s
  • the developing time is 65s.
  • the evaporation rate of the metal layer electrode was 0.25 nm/min.
  • the time of ICP etching is 2h.
  • Ni The evaporation rate of the Ni layer was 0.25 nm/min. And Ni was annealed at 550°C for 2h to form NiO.
  • NiO/porous GaN resonant cavity InGaN blue light detector prepared in this embodiment was tested.
  • NiO/porous GaN resonant cavity InGaN blue light detector prepared in this embodiment is similar to that of Embodiment 1, and the relevant performance parameters can refer to the corresponding drawings of Embodiment 1.
  • the present embodiment provides a kind of NiO/porous GaN resonant cavity InGaN, comprises the substrate that arranges in order from bottom to top, buffer layer, porous GaN layer (resonant cavity bottom mirror), P-I-N functional layer, NiO layer (resonant cavity top Mirror) and metal layer electrodes, the buffer layer is AlN layer, AlGaN layer and GaN layer arranged in sequence from bottom to top, the thickness of AlN layer, AlGaN layer and GaN layer are 300nm, 300nm, 3.0 ⁇ m respectively.
  • the substrate is a Si substrate; the thickness of the porous GaN layer (resonator bottom mirror) is 3.0 ⁇ m.
  • the P-I-N functional layer is an n-GaN layer, an InGaN layer and a p-GaN layer arranged in sequence from bottom to top, and the thicknesses of the n-GaN layer, InGaN layer and p-GaN layer are 600nm, 150nm and 100nm respectively.
  • the thickness of the NiO layer is 30 nm.
  • the metal layer electrode is a Ni/Au metal layer, the Ni/Au metal layer is a Ni metal layer and an Au metal layer arranged from bottom to top, the thickness of the Ni metal layer is 100nm, and the thickness of the Au metal layer is 100nm.
  • the InGaN layer and the p-GaN layer form a mesa on the n-GaN layer; the mesa on the n-GaN layer is provided with an electrode layer.
  • the NiO layer forms a mesa on the p-GaN layer; the mesa on the p-GaN layer is provided with an electrode layer.
  • This embodiment also provides a method for preparing the NiO/porous GaN resonant cavity InGaN blue light detector, comprising the following steps:
  • a buffer layer is grown on the Si substrate by MOCVD method, and then a GaN layer (resonator bottom mirror) is grown on the buffer layer;
  • the GaN layer is etched into a porous GaN layer by electrochemical etching, and a P-I-N functional layer is grown on it by MOCVD;
  • the buffer layer means that an AlN layer, an AlGaN layer and a GaN layer are epitaxially grown on the substrate from bottom to top by MOCVD method, and the temperatures for growing the AlN layer, AlGaN layer and GaN layer are 1200°C, 1200°C and 1100°C respectively. .
  • the temperature for growing a GaN layer (resonator bottom mirror) on the buffer layer by MOCVD is 1100°C.
  • the PIN functional layer means that the n-GaN layer, the InGaN layer and the p-GaN layer are epitaxially grown from bottom to top on the porous GaN layer by MOCVD method at temperatures of 1100°C, 650°C and 1100°C respectively.
  • the p-GaN layer dopant is Mg element with a concentration of 0.8 ⁇ 10 18 cm 3 .
  • the n-GaN layer dopant is Si element with a concentration of 0.8 ⁇ 10 18 cm 3 .
  • the electrochemical etching solution is a mixed solution of 49% HF acid and absolute ethanol, and the volume ratio is 1:1. Electrochemical etching conditions: the power of the ultraviolet lamp is 150W; the voltage is 10V, and the etching is performed for 20min.
  • the porous GaN layer has a pore diameter of 60 nm and a porosity of 90%.
  • Photolithography conditions the drying time is 40s, the exposure time is 8s, the developing time is 55s, and the oxygen ion treatment time is 2min.
  • the evaporation rate of the metal layer electrode was 0.200 nm/min.
  • the time of ICP etching is 1h.
  • Ni The evaporation rate of the Ni layer was 0.200 nm/min. And Ni was annealed at 650°C for 1h to form NiO.
  • NiO/porous GaN resonant cavity InGaN blue light detector prepared in this embodiment was tested.

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Abstract

本发明属于蓝光探测器的技术领域，公开了一种NiO/多孔GaN谐振腔InGaN蓝光探测器及其制备方法。所述探测器包括依次层叠的衬底、缓冲层、多孔GaN层、n-GaN层、InGaN层，所述n-GaN层上表面部分被InGaN层覆盖，另一部分为裸露部分；InGaN层上设有p-GaN层，p-GaN层上设有NiO层，p-GaN层上表面部分被NiO层覆盖，另一部分为裸露部分；n-GaN层上表面的裸露部分和p-GaN层上表面的裸露部分设有电极层。本发明还公开了探测器的制备方法。本发明的探测器提升了蓝光波段的量子效率，有效增强蓝光谐振吸收，实现高灵敏度高带宽探测。

Description

一种NiO/多孔GaN谐振腔InGaN蓝光探测器及其制备方法 技术领域
本发明属于可见光探测器领域，具体涉及一种NiO/多孔GaN谐振腔InGaN蓝光探测器及其制备方法。
背景技术
随着基于GaN的发光二极管(LED)的快速发展，可见光通信(VLC)引起了人们的广泛关注。对于VLC系统的光接收机，光电探测器的量子效率(QE)和时间响应也很重要，因为它们决定了数据传输的距离和速率。为了将光的发射和探测集成在单一芯片上的自由空间VLC系统的小型化和简化，需要具有与光源发射光谱匹配的高灵敏度和波长选择性的光电探测器。目前，基于硅的光电探测器通过实现蓝滤波技术来检测基于氮化镓的白光LED发出的蓝光。但该技术的缺点是透光率低，成本高，VLC系统复杂。此外，硅基光电探测器的宽频带响应在被测信号和背景信号之间造成了不期望的干扰效应。
作为第三代半导体材料研究热点之一的InGaN材料拥有良好的物理化学性质。其拥有高电子迁移率，热稳定性、化学稳定性优异。通过调整合金中In的组分，可以实现禁带宽度从3.4eV到0.7eV的连续调节，从而实现InGaN探测器能够实现覆盖整个可见光波段的连续探测。
虽然InGaN基探测器器件制备研究取得了一定研究进展，但是到目前为止还没有实现商品转化。制约InGaN探测器发展和应用的主要问题是器件结构设计与工艺问题。一方面，器件结构设计缺陷大大影响了器件的性能，导致器件响应度低，带宽窄，灵敏度低，量子效率低。同时，制备工艺不够完善也大大限制了器件性能与生产。
发明内容
为了解决以上问题，本发明提供了一种NiO/多孔GaN谐振腔InGaN蓝光探测器及其制备方法。本发明的蓝光探测器中多孔GaN层(谐振腔底镜)/P-I-N 功能层/NiO层(谐振腔顶镜)所形成的NiO/多孔GaN谐振腔，有效增强蓝光谐振吸收，实现高灵敏度高带宽探测。
本发明的目的通过以下技术方案实现：
一种NiO/多孔GaN谐振腔InGaN蓝光探测器，包括依次层叠的衬底、缓冲层、多孔GaN层(谐振腔底镜)、n-GaN层、InGaN层，所述n-GaN层上表面部分被InGaN层覆盖，另一部分为裸露部分；所述InGaN层上设有p-GaN层，所述p-GaN层上设有NiO层(谐振腔顶镜)，p-GaN层上表面部分被NiO层覆盖，另一部分为裸露部分；所述n-GaN层上表面的裸露部分和p-GaN层上表面的裸露部分设有电极层。
电极层与NiO层不接触，电极层与InGaN层不接触。
所述n-GaN层、InGaN层以及p-GaN层形成P-I-N功能层。
所述n-GaN层上表面部分被InGaN层覆盖，另一部分为裸露部分是指InGaN层在n-GaN层上形成台阶状的水平台面；n-GaN层上的台面设有电极层。
p-GaN层上表面部分被NiO层覆盖，另一部分为裸露部分是指NiO层在p-GaN层上形成台阶状的水平台面；p-GaN层上的台面设有电极层。
所述电极层为金属层电极，
所述缓冲层为从下到上依次层叠的AlN层、AlGaN层和GaN层，AlN层设置于衬底上；
所述多孔GaN层的厚度为2～4μm。
多孔GaN层的孔径为50～60nm，孔隙率为90～95％。
P-I-N功能层中，n-GaN、InGaN、p-GaN的厚度分别为600～900nm、150～200nm、100～150nm。
NiO层厚度为30～50nm。
所述衬底为Si衬底。
缓冲层中，AlN层、AlGaN层和GaN层的厚度分别为300～400nm、300～400nm、3～4μm。
n-GaN层与p-GaN上金属层电极各自为Ni/Au金属层，Ni金属层的厚度为100～110nm，Au金属层的厚度为100～110nm。
所述Ni设置在n-GaN层上。
所述Ni设置在p-GaN层上。
所述NiO/多孔GaN谐振腔InGaN蓝光探测器的制备方法，包括以下步骤：
(1)采用MOCVD方法在衬底上生长缓冲层，再在缓冲层上生长GaN层(谐振腔底镜)；
(2)通过电化学刻蚀的方法将GaN层刻蚀成多孔GaN层，并在多孔GaN层上采用MOCVD方法生长n-GaN层、InGaN层、p-GaN层；
(3)在p-GaN层上进行第一光刻，显影后，通过采用ICP刻蚀的方式刻蚀掉部分p-GaN层和InGaN层，将n-GaN暴露出来形成台面，并在n-GaN上蒸镀电极层；去除第一次光刻后的光刻胶，再进行第二次光刻显影，p-GaN层上得到沉积电极的区域；然后在p-GaN上蒸镀制备电极；
(4)去除第二次光刻的光刻胶，在p-GaN上光刻显影，获得沉积NiO层的区域；在沉积NiO层的区域蒸镀Ni，退火，将Ni氧化成NiO得到NiO层(谐振腔顶镜)。
所述采用MOCVD方法在衬底上生长缓冲层是指采用MOCVD方法在衬底上生长缓冲层从下到上依次外延生长AlN层、AlGaN层和GaN层，生长AlN层、AlGaN层和GaN层的温度分别为1200～1300℃、1200～1300℃和1100～1250℃。
在缓冲层上生长GaN层是指采用MOCVD方法在缓冲层上生长GaN层(谐振腔底镜)，生长GaN层的温度为1100～1250℃。
所述电化学刻蚀的溶液为体积浓度为49％的HF酸与无水乙醇的混合溶液|，体积比为1∶1。电化学刻蚀的条件：紫外灯的功率为150W。电压在10～20V下，刻蚀20～30min。
通过本发明的电化学刻蚀，多孔GaN层的孔径为50～60nm，孔隙率为90～95％。
采用MOCVD方法在衬底上生长P-I-N功能层从下到上依次外延生长n-GaN层、InGaN层和n-GaN层，生长n-GaN层、InGaN层和n-GaN层的温度分别为1100～1250℃、650～850℃和1100～1250℃。
第一次光刻时烘干时间为40～50s，曝光时间为8～10s，显影时间为55～65s；ICP刻蚀的时间为1～2h。
金属层电极的蒸镀速率为0.20～0.25nm/min。
第二次光刻时烘干时间为40～50s，曝光时间为8～10s，显影时间为55～65s。
金属层电极的蒸镀速率为0.20～0.25nm/min。
制备NiO层(谐振腔顶镜)，Ni层的蒸镀速率为0.20～0.25nm/min。并将Ni在550～650℃下退火1～2h成NiO。
所述的NiO/多孔GaN谐振腔InGaN蓝光探测器在蓝光探测中的应用。
本发明的探测器具有NiO/多孔GaN谐振腔，有效增强蓝光谐振吸收，实现高灵敏度高带宽探测。本发明采用的AlN/AlGaN/GaN缓冲层，减少了位错的产生，使材料缺陷密度由10 9减小到10 5，使生长的多孔GaN层与P-I-N功能层材料质量更好。而且由于直接生长InGaN较为困难，易发生相分离。本发明通过采用p-GaN/InGaN/n-GaN器件结构，减少相分离，提高InGaN材料的晶体质量，从而获得高性能(量子效率高，响应速度快和灵敏度高等)蓝光探测器。另外，本发明通过蒸镀，退火工艺制作NiO(谐振腔顶镜)，形成形状规则，分布均匀，表面光滑，质量较好NiO微晶体，拥有极好的光约束与光学共振特征。而且通过电化学刻蚀法可以得到孔洞大小规则，排列分布均匀、质量较好的多孔GaN材料(谐振腔底镜)，操作简单。
和现有技术相比，本发明具有以下有益效果和优点：
(1)本发明采用MOCVD高温外延方法结合MOCVD低温外延方法，通过高温法在Si衬底上生长AlN/AlGaN/GaN缓冲层，再通过低温法生长P-I-N功能层。本发明的制备方法具有工艺简单、省时高效以及能耗低的特点，制得材料质量较好，有利于规模化生产。
(2)本发明通过电化学刻蚀得到优质多孔GaN层即谐振腔底镜，得到孔洞大小规则，排列分布均匀、质量较好的多孔GaN材料。该方法工艺简单，有利于规模化生产。
(3)本发明提出一种蒸镀结合退火得到NiO层制备谐振腔顶镜的方法，得到形状规则，分布均匀，表面光滑，质量较好NiO微晶体，拥有极好的光约束与光学共振特征。
(4)本发明的NiO/多孔GaN谐振腔InGaN蓝光探测器具有NiO/多孔GaN谐振腔结构，可以大大增强蓝光谐振吸收，实现高灵敏度高带宽探测。
附图说明
图1为本发明提供的NiO/多孔GaN谐振腔InGaN蓝光探测器的结构剖面示意图；
图2为本发明提供的NiO/多孔GaN谐振腔InGaN蓝光探测器的俯视面示意图；
图3为实施例1制备的NiO/多孔GaN谐振腔InGaN蓝光探测器的I-V曲线图；
图4为实施例1制备的NiO/多孔GaN谐振腔InGaN蓝光探测器的光谱响应曲线图。
具体实施方式
下面结合实施例，对本发明作进一步地详细说明，但本发明的实施方式不限于此。
本发明的NiO/多孔GaN谐振腔InGaN蓝光探测器结构剖面示意图如图1所示，包括依次层叠的衬底1、缓冲层2、多孔GaN层3(谐振腔底镜)、n-GaN层4、InGaN层5，所述n-GaN层4上表面部分被InGaN层5覆盖，另一部分为裸露部分；所述InGaN层5上设有p-GaN层6，所述p-GaN层6上设有NiO层7(谐振腔顶镜)，p-GaN层6上表面部分被NiO层7覆盖，另一部分为裸露部分；所述n-GaN层4上表面的裸露部分和p-GaN层6上表面的裸露部分设有电极层8；电极层8与NiO层7不接触。
电极层8与InGaN层5不接触。
所述n-GaN层4、InGaN层5以及p-GaN层6形成P-I-N功能层。
所述n-GaN层4上表面部分被InGaN层5覆盖，另一部分为裸露部分是指InGaN层5在n-GaN层4上形成台面；n-GaN层4上的台面设有电极层。
p-GaN层6上表面部分被NiO层7覆盖，另一部分为裸露部分是指NiO层7在p-GaN层6上形成台面；p-GaN层6上的台面设有电极层8。
所述电极层8为金属层电极，
所述缓冲层2为从下到上依次层叠的AlN层、AlGaN层和GaN层，AlN层设置于衬底1上；
所述多孔GaN层3的厚度为2～4μm。
多孔GaN层的孔径为50～60nm，孔隙率为90～95％。
P-I-N功能层中，n-GaN层4、InGaN层5、p-GaN层6的厚度分别为600～900nm、150～200nm、100～150nm。
NiO层7厚度为30～50nm。
所述衬底1为Si衬底。
缓冲层2中，AlN层、AlGaN层和GaN层的厚度分别为300～400nm、300～400nm、3～4μm。
n-GaN层4与p-GaN层6上金属层电极各自为Ni/Au金属层，Ni金属层的厚度为100～110nm，Au金属层的厚度为100～110nm。所述Ni设置在n-GaN层上。所述Ni设置在p-GaN层上。
p-GaN层掺杂剂为Mg元素，浓度为(0.8～1.5)×10 18cm 3。n-GaN层掺杂剂为Si元素，浓度为(0.8～1.5)×10 18cm 3。
本发明提供的NiO/多孔GaN谐振腔InGaN蓝光探测器的俯视面示意图如图2所示。
实施例1
本实施例提供了一种NiO/多孔GaN谐振腔InGaN，包括从下到上依次排布的衬底，缓冲层，多孔GaN层(谐振腔底镜)，P-I-N功能层，NiO层(谐振腔顶镜)以及金属层电极；缓冲层为从下到上依次排布的AlN层、AlGaN层和GaN层，AlN层、AlGaN层和GaN层的厚度分别为350nm、350nm、3.5μm。衬底为Si衬底；多孔GaN层(谐振腔底镜)厚度为3.5μm。P-I-N功能层为从下到上依次排布的n-GaN层、InGaN层和p-GaN层，n-GaN层、InGaN层和p-GaN层的厚度分别为800nm、170nm、125nm。NiO层厚度为40nm。金属层电极为Ni/Au金属层，Ni/Au金属层为从下到上排布的Ni金属层和Au金属层，Ni金属层的厚度为105nm，Au金属层的厚度为105nm。InGaN层和p-GaN层在n-GaN层上形成台面；n-GaN层上的台面设有电极层。NiO层在p-GaN层上形成台面；p-GaN层上的台面设有电极层。
本实施例还提供了制备所述NiO/多孔GaN谐振腔InGaN蓝光探测器的方法，包括以下步骤：
(1)采用MOCVD方法在Si衬底上生长缓冲层，再在缓冲层上生长GaN层(谐振腔底镜)；
(2)通过电化学刻蚀的方法将GaN层刻蚀成多孔GaN层，并在其上采用MOCVD方法生长P-I-N功能层；
(3)在p-GaN层上进行第一次光刻，显影后，通过采用ICP刻蚀的方式将n-GaN暴露出来上，并在上面蒸镀Ni/Au电极。再进行第二次光刻，显影后在p-GaN上蒸镀制备Ni/Au电极；
(4)在p-GaN上光刻显影，并在上面蒸镀Ni，再通过退火的方法，将Ni氧化成NiO得到NiO层(谐振腔顶镜)。
所述缓冲层是指采用MOCVD方法在衬底上从下到上依次外延生长AlN层、AlGaN层和GaN层，生长AlN层、AlGaN层和GaN层的温度分别为1250℃、1250℃和1200℃。
采用MOCVD方法在缓冲层上生长GaN层(谐振腔底镜)的温度为1200℃。
所述P-I-N功能层是指采用MOCVD方法在多孔的GaN层上从下到上依次外延生长n-GaN层、InGaN层和p-GaN层，生长n-GaN层、InGaN层和p-GaN层的温度分别为1250℃、700℃和1250℃。p-GaN层掺杂剂为Mg元素，浓度为1×10 18cm 3。n-GaN层掺杂剂为Si元素，浓度为1×10 18cm 3。
电化学刻蚀的溶液为浓度为49％的HF酸与无水乙醇的混合溶液，体积比为1∶1。电化学刻蚀的条件：紫外灯的功率为150W；电压在15V下，刻蚀25min。多孔GaN层的孔径为50nm，孔隙率为95％。
第一次光刻的条件为烘干时间为45s，曝光时间为9s，显影时间为60s。
金属层电极的蒸镀速率为0.225nm/min。ICP刻蚀的时间为1.5h。
Ni层的蒸镀速率为0.225nm/min。并将Ni在600℃下退火1.5h成NiO。
将本实施例制备的NiO/多孔GaN谐振腔InGaN蓝光探测器进行测试。
图3为本实施例所得NiO/多孔GaN谐振腔InGaN蓝光探测器的暗电流曲线，由图可见，制作电极为肖特基接触，在2V偏压下，暗电流达到100nA，光电流为30μA。暗电流低，说明载流子注入效率高，该探测器外延在蓝光波段拥有高速的响应。
图4，为本实施例所得NiO/多孔GaN谐振腔InGaN蓝光探测器的光谱响应 曲线。由曲线可看出，在445nm处，响应度为0.0492A/W。说明该探测器在蓝光波段拥有更高的量子效率以及较高的灵敏度。
实施例2
本实施例提供了一种NiO/多孔GaN谐振腔InGaN，包括从下到上依次排布的衬底、缓冲层，多孔GaN层(谐振腔底镜)，P-I-N功能层、NiO层(谐振腔顶镜)以及金属层电极，缓冲层为从下到上依次排布的AlN层、AlGaN层和GaN层，AlN层、AlGaN层和GaN层的厚度分别为400nm、400nm、4μm。衬底为Si衬底；多孔GaN层(谐振腔底镜)厚度为4μm。P-I-N功能层为从下到上依次排布的n-GaN层、InGaN层和p-GaN层，n-GaN层、InGaN层和p-GaN层的厚度分别为900nm、200nm、150nm。NiO层厚度为50nm。金属层电极为Ni/Au金属层，Ni/Au金属层为从下到上排布的Ni金属层和Au金属层，Ni金属层的厚度为110nm，Au金属层的厚度为110nm。InGaN层和p-GaN层在n-GaN层上形成台面；n-GaN层上的台面设有电极层。NiO层在p-GaN层上形成台面；p-GaN层上的台面设有电极层。
本实施例还提供了制备所述NiO/多孔GaN谐振腔InGaN蓝光探测器的方法，包括以下步骤：
(1)采用MOCVD方法在Si衬底上生长缓冲层，再在缓冲层上生长GaN层(谐振腔底镜)；
(2)通过电化学刻蚀的方法将GaN层刻蚀成多孔GaN层，并在其上采用MOCVD方法生长P-I-N功能层；
(3)在p-GaN层上进行第一次光刻，显影后，通过采用ICP刻蚀的方式将n-GaN暴露出来上，并在上面蒸镀Ni/Au电极；再进行第二次光刻，显影后在p-GaN上蒸镀制备Ni/Au电极；
(4)在p-GaN上光刻显影，并在上面蒸镀Ni，再通过退火的方法，将Ni氧化成NiO得到NiO层(谐振腔顶镜)。
所述缓冲层是指采用MOCVD方法在衬底上从下到上依次外延生长AlN层、AlGaN层和GaN层，生长AlN层、AlGaN层和GaN层的温度分别为1300℃、1300℃和1250℃。
采用MOCVD方法在缓冲层上生长GaN层(谐振腔底镜)的温度为1250℃。
所述P-I-N功能层是指采用MOCVD方法在多孔的GaN层上从下到上依次外延生长n-GaN层、InGaN层和p-GaN层的温度分别为1250℃、800℃和1250℃。p-GaN层掺杂剂为Mg元素，浓度为1.2×10 18cm 3。n-GaN层掺杂剂为Si元素，浓度为1.2×10 18cm 3。
电化学刻蚀的溶液为49％的HF酸与无水乙醇的混合溶液，体积比为1∶1。电化学刻蚀的条件：紫外灯的功率为150W；电压在20V下，刻蚀30min。多孔GaN层的孔径为55nm，孔隙率为92.5％。
第一次光刻的条件：烘干时间为50s，曝光时间为10s，显影时间为65s。金属层电极的蒸镀速率为0.25nm/min。ICP刻蚀的时间为2h。
Ni层的蒸镀速率为0.25nm/min。并将Ni在550℃下退火2h成NiO。
将本实施例制备的NiO/多孔GaN谐振腔InGaN蓝光探测器进行测试。
本实施例制备的NiO/多孔GaN谐振腔InGaN蓝光探测器的相关性能和实施例1相似，相关性能参数可参照实施例1的相应附图。
实施例3
本实施例提供了一种NiO/多孔GaN谐振腔InGaN，包括从下到上依次排布的衬底、缓冲层，多孔GaN层(谐振腔底镜)，P-I-N功能层、NiO层(谐振腔顶镜)以及金属层电极，缓冲层为从下到上依次排布的AlN层、AlGaN层和GaN层，AlN层、AlGaN层和GaN层的厚度分别为300nm、300nm、3.0μm。衬底为Si衬底；多孔GaN层(谐振腔底镜)厚度为3.0μm。P-I-N功能层为从下到上依次排布的n-GaN层、InGaN层和p-GaN层，n-GaN层、InGaN层和p-GaN层的厚度分别为600nm、150nm、100nm。NiO层厚度为30nm。金属层电极为Ni/Au金属层，Ni/Au金属层为从下到上排布的Ni金属层和Au金属层，Ni金属层的厚度为100nm，Au金属层的厚度为100nm。InGaN层和p-GaN层在n-GaN层上形成台面；n-GaN层上的台面设有电极层。NiO层在p-GaN层上形成台面；p-GaN层上的台面设有电极层。
本实施例还提供了制备所述NiO/多孔GaN谐振腔InGaN蓝光探测器的方法，包括以下步骤：
(1)采用MOCVD方法在Si衬底上生长缓冲层，再在缓冲层上生长GaN层(谐振腔底镜)；
(2)通过电化学刻蚀的方法将GaN层刻蚀成多孔GaN层，并在其上采用MOCVD方法生长P-I-N功能层；
(3)在p-GaN层上进行光刻，显影后，通过采用ICP刻蚀的方式将n-GaN暴露出来上，并在上面蒸镀Ni/Au电极。再进行第二次光刻显影，在p-GaN上蒸镀制备Ni/Au电极；
(4)在p-GaN上光刻显影，并在上面蒸镀Ni，再通过退火的方法，将Ni氧化成NiO得到NiO层(谐振腔顶镜)。
所述缓冲层是指采用MOCVD方法在衬底上从下到上依次外延生长AlN层、AlGaN层和GaN层，生长AlN层、AlGaN层和GaN层的温度分别为1200℃、1200℃和1100℃。
采用MOCVD方法在缓冲层上生长GaN层(谐振腔底镜)的温度为1100℃。
所述P-I-N功能层是指采用MOCVD方法在多孔的GaN层上从下到上依次外延生长n-GaN层、InGaN层和p-GaN层的温度分别为1100℃、650℃和1100℃。p-GaN层掺杂剂为Mg元素，浓度为0.8×10 18cm 3。n-GaN层掺杂剂为Si元素，浓度为0.8×10 18cm 3。
电化学刻蚀的溶液为49％的HF酸与无水乙醇的混合溶液，体积比为1∶1。电化学刻蚀的条件：紫外灯的功率为150W；电压在10V下，刻蚀20min。多孔GaN层的孔径为60nm，孔隙率为90％。
光刻的条件：烘干时间为40s，曝光时间为8s，显影时间为55s，氧离子处理时间为2min。金属层电极的蒸镀速率为0.200nm/min。ICP刻蚀的时间为1h。
Ni层的蒸镀速率为0.200nm/min。并将Ni在650℃下退火1h成NiO。
将本实施例制备的NiO/多孔GaN谐振腔InGaN蓝光探测器进行测试。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受所述实施例的限制，其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。

Claims (10)

  1. 一种NiO/多孔GaN谐振腔InGaN蓝光探测器，其特征在于：包括依次层叠的衬底、缓冲层、多孔GaN层、n-GaN层、InGaN层，所述n-GaN层上表面部分被InGaN层覆盖，另一部分为裸露部分；所述InGaN层上设有p-GaN层，所述p-GaN层上设有NiO层，p-GaN层上表面部分被NiO层覆盖，另一部分为裸露部分；所述n-GaN层上表面的裸露部分和p-GaN层上表面的裸露部分设有电极层。
  2. 根据权利要求1所述NiO/多孔GaN谐振腔InGaN蓝光探测器，其特征在于：电极层与NiO层不接触；
    所述缓冲层为从下到上依次层叠的AlN层、AlGaN层和GaN层，AlN层设置于衬底上；
    所述多孔GaN层的厚度为2～4μm；多孔GaN层的孔径为50～60nm，孔隙率为90～95％；
    所述n-GaN层、InGaN层以及p-GaN层形成P-I-N功能层；
    P-I-N功能层中，n-GaN层、InGaN层、p-GaN层的厚度分别为600～900nm、150～200nm、100～150nm；
    所述NiO层的厚度为30～50nm。
  3. 根据权利要求2所述NiO/多孔GaN谐振腔InGaN蓝光探测器，其特征在于：缓冲层中，AlN层、AlGaN层和GaN层的厚度分别为300～400nm、300～400nm、3～4μm。
  4. 根据权利要求1所述NiO/多孔GaN谐振腔InGaN蓝光探测器，其特征在于：所述衬底为Si衬底；
    n-GaN层上的金属层电极为Ni/Au金属层，Ni金属层的厚度为100～110nm，Au金属层的厚度为100～110nm；Ni设置在n-GaN层上；
    p-GaN层上的金属层电极为Ni/Au金属层，Ni金属层的厚度为100～110nm，Au金属层的厚度为100～110nm；Ni设置在p-GaN层上。
  5. 根据权利要求1所述NiO/多孔GaN谐振腔InGaN蓝光探测器，其特征在于：所述n-GaN层上表面部分被InGaN层覆盖，另一部分为裸露部分是指InGaN层在n-GaN层上形成台阶状的水平台面；n-GaN层上的台面设有电极层；
    p-GaN层上表面部分被NiO层覆盖，另一部分为裸露部分是指NiO层在p-GaN层上形成台阶状的水平台面；p-GaN层上的台面设有电极层。
  6. 根据权利要求1～5任一项所述NiO/多孔GaN谐振腔InGaN蓝光探测器的制备方法，其特征在于：包括以下步骤：
    (1)采用MOCVD方法在衬底上生长缓冲层，再在缓冲层上生长GaN层；
    (2)通过电化学刻蚀的方法将GaN层刻蚀成多孔GaN层，并在多孔GaN层上采用MOCVD方法依次生长n-GaN层、InGaN层、p-GaN层；
    (3)在p-GaN层上进行第一光刻，显影后，通过采用ICP刻蚀的方式刻蚀掉部分p-GaN层和InGaN层，将n-GaN暴露出来形成台面，并在n-GaN上蒸镀电极层；去除第一次光刻后的光刻胶，再进行第二次光刻显影，p-GaN层上得到沉积电极的区域；然后在p-GaN层上蒸镀制备电极；
    (4)去除第二次光刻的光刻胶，在p-GaN层上光刻，获得沉积NiO层的区域；在沉积NiO层的区域蒸镀Ni，退火，将Ni氧化成NiO得到NiO层。
  7. 根据权利要求6所述NiO/多孔GaN谐振腔InGaN蓝光探测器的制备方法，其特征在于：所述采用MOCVD方法在衬底上生长缓冲层是指采用MOCVD方法在衬底上生长缓冲层从下到上依次外延生长AlN层、AlGaN层和GaN层，生长AlN层、AlGaN层和GaN层的温度分别为1200～1300℃、1200～1300℃和1100～1250℃；
    在缓冲层上生长GaN层是指采用MOCVD方法在缓冲层上生长GaN层，生长GaN层的温度为1100～1250℃。
  8. 根据权利要求6所述NiO/多孔GaN谐振腔InGaN蓝光探测器的制备方法，其特征在于：所述电化学刻蚀的溶液为体积浓度为49％的HF酸与无水乙醇的混合溶液，体积比为1∶1；电化学刻蚀的条件：紫外灯的功率为150W，电压在10～20V下，刻蚀20～30min；
    在多孔GaN层上采用MOCVD方法依次生长n-GaN层、InGaN层、p-GaN层，生长n-GaN层、InGaN层和n-GaN层的温度分别为1100～1250℃、650～850℃和1100～1250℃。
  9. 根据权利要求6所述NiO/多孔GaN谐振腔InGaN蓝光探测器的制备方法，其特征在于：在n-GaN上蒸镀电极层时，电极的蒸镀速率为0.20～0.25 nm/mm；
    在p-GaN层上蒸镀制备电极时，电极的蒸镀速率为0.20～0.25nm/min；
    蒸镀Ni时，Ni层的蒸镀速率为0.20～0.25nm/min；退火的条件：在550～650℃下退火1～2h。
  10. 根据权利要求1～5任一项所述NiO/多孔GaN谐振腔InGaN蓝光探测器在蓝光探测中的应用。
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