WO2023045113A1 - 一种可实现芯片自毁的芯片附属装置及其控制方法 - Google Patents

一种可实现芯片自毁的芯片附属装置及其控制方法 Download PDF

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Publication number
WO2023045113A1
WO2023045113A1 PCT/CN2021/137749 CN2021137749W WO2023045113A1 WO 2023045113 A1 WO2023045113 A1 WO 2023045113A1 CN 2021137749 W CN2021137749 W CN 2021137749W WO 2023045113 A1 WO2023045113 A1 WO 2023045113A1
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Prior art keywords
chip
self
module
destruction
circuit
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Ceased
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PCT/CN2021/137749
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English (en)
French (fr)
Inventor
刘鹏
刘波
焦国华
赵智军
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Shenzhen Institute of Advanced Technology of CAS
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Shenzhen Institute of Advanced Technology of CAS
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/40—Arrangements for protection of devices protecting against tampering, e.g. unauthorised inspection or reverse engineering
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
    • G06F21/70—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer
    • G06F21/78—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data

Definitions

  • the invention relates to the fields of information security and integrated circuits, in particular to a chip attachment capable of self-destructing the chip and a control method thereof.
  • the core Components are core chips that contain key technologies or information.
  • the present invention provides a chip attachment capable of self-destructing the chip and a control method thereof.
  • a chip accessory device capable of self-destruction of the chip comprising a substrate and a self-destruction module electrically integrated on the substrate, the substrate is fixedly arranged in the system circuit where the target chip is located, and is electrically connected to the system circuit connect;
  • the self-destruct module includes an excitation unit in contact with the target chip, and the excitation unit forms a closed space with the target chip through a sealing member;
  • the excitation unit is provided with a heating circuit that can be activated and conducted in a preset manner.
  • the heating circuit is coated with an energetic material that can undergo a deflagration reaction when heated, and is heated by exciting and conducting the heating circuit to achieve Exciting the energetic material to undergo an explosion reaction, and then destroying the target chip in the confined space.
  • the heating circuit includes electrode pads, wires and heating elements
  • Both ends of the heating element are respectively connected to one of the wires;
  • One end of the wire is connected to the heating element, and the other end is connected to the electrode pad.
  • the self-destruction module further includes a trigger unit for preventing false triggering, and the trigger unit is electrically connected to the excitation unit;
  • the trigger unit is provided with a power isolation switch or a fuse.
  • it also includes an acquisition module and a control module, and the control module is electrically integrated on the substrate;
  • the control module is respectively connected to the collection module and the self-destruction module, and is used to control the operation of the self-destruction module according to the information collected by the collection module.
  • a photosensitive diode is integrated in the acquisition module, and a triode switch, a power transistor and a series resistor are integrated in the control module;
  • the base of the transistor switch is connected to the anode of the photodiode, the emitter is connected to the series resistor and the base of the power transistor, and the collector is connected to the cathode of the photodiode and the emitter of the power transistor.
  • the triode switch when the light intensity is less than 50 lux, the resistance value of the photodiode decreases, the triode switch is turned on, and the power triode is further turned on, so as to start the self-destruct module.
  • the acquisition module includes a photosensitive sensor, and/or a force sensitive sensor, and/or a gravity sensor;
  • the energetic material includes lead styphate sol and thermite.
  • control method of a chip attachment capable of self-destruction of the chip includes the following:
  • the self-destruct module is electrically integrated on the substrate, the substrate is fixedly arranged in the system circuit of the target chip, the excitation unit forms a closed space with the target chip through the sealing component, and the heating circuit coated with energetic material faces the target chip. the target chip;
  • the energetic material coated on the heating circuit After being heated to a preset temperature by the heating circuit, the energetic material coated on the heating circuit undergoes an explosion reaction, forming an impact in the confined space, and destroying the target chip.
  • the attached device of the chip also includes a trigger device, a collection device and a control device, and the control method further includes:
  • the control module analyzes the information collected by the collection module, and sends a self-destruction instruction after satisfying the preset self-destruction condition;
  • the false trigger setting of the trigger device is removed, and the excitation module is stimulated to self-destruct.
  • a photosensitive diode is integrated in the acquisition module, and a triode switch, a power transistor and a series resistor are integrated in the control module;
  • the resistance value of the photosensitive diode decreases, the triode switch is turned on, and the power triode is further turned on, thereby starting the self-destruct module.
  • the invention provides a chip attachment device capable of self-destruction of the chip and its control method.
  • the complete destruction of the target chip is realized by adding an attachment module with a self-destruction device, thereby Ensure the information security of the chip.
  • the self-destruct module By integrating the self-destruct module on the substrate and adopting the secondary excitation structure design of weak current excitation-chemical explosion, it can effectively reduce the impact of high current output on the original system load.
  • the heating circuit is turned on and the heat is released, so that the energetic material undergoes a violent explosion reaction when heated, and instantly produces a strong impact on the target chip in a small confined space, resulting in penetrating or crushing damage to the target chip. , and the physical damage is irrecoverable, so the damage effect is more thorough.
  • FIG. 1 is a schematic structural view of a chip attachment device according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram of a complete structure of a chip attachment device according to an embodiment of the present invention
  • Fig. 3 is a schematic structural diagram of a heating circuit according to an embodiment of the present invention.
  • FIG. 4 is a schematic flow chart of a control method according to an embodiment of the present invention.
  • Fig. 5 is a schematic diagram of the principle of the control method of the embodiment of the present invention.
  • This embodiment proposes a chip attachment device capable of self-destruction of the chip.
  • the schematic structural diagram of the chip attachment device is shown in Figure 1 of the specification.
  • the specific plan is as follows:
  • a chip attachment device capable of self-destruction of the chip includes a substrate 1 and a self-destruct module 2 electrically integrated on the substrate 1, the substrate 1 is fixedly arranged in the system circuit 7 where the target chip 8 is located, and is connected with the system The circuit 7 is electrically connected.
  • a collection module 3 and a control module 4 can also be integrated on the substrate 1.
  • the control module 4 is respectively connected to the collection module 3 and the self-destruct module 2 to control the operation of the self-destruct module 2 according to the information collected by the collection module 3.
  • functional devices such as sensors and logic chips can be integrated according to application requirements, so as to realize the rapid self-destruction function under specific conditions.
  • the chip accessory device provided in this embodiment does not need to change the internal structure of the chip, only needs to make small changes to the system circuit 7 where the chip is located, and connect the chip accessory device to the system circuit 7 where the chip is located, to realize the target chip 8. self-destruct.
  • the circuit of the substrate 1 is a printed circuit board, which can be electrically connected with the system circuit 7 where the target chip 8 is located.
  • the substrate 1 can be fixedly connected to the bottom or top of the target chip 8 through a connector, and communicate with the system circuit 7 through a connector to obtain power support.
  • it is fixed on the surface of the target chip 8 of the system circuit 7 by screws or connectors, and a sealing member 16 is added between the target chip 8 and the self-destruct module 2 to form a narrow sealed space.
  • the substrate 1 is connected to the system circuit 7 using a flexible cable 17 and obtains power support.
  • the circuit of the substrate 1 is made by PCB technology, and the circuit diagram is planned according to the integrated hardware configuration requirements, and sensors, logic chips, and self-destruct devices can be connected in series.
  • the acquisition module 3 includes a photosensitive sensor, and/or a force sensitive sensor, and/or a gravity sensor.
  • the control module 4 is provided with a logic processor, which includes but is not limited to any known logic chip, which is mainly used to analyze and verify the data information collected by the sensor, and compare it with a preset threshold to determine Whether to start the self-destruct procedure.
  • the self-destruction program When the environmental information of the system circuit 7 acquired by the sensor reaches a preset trigger condition, the self-destruction program will be activated after analysis and confirmation by the logic chip, and then the excitation circuit will be turned on and heat will be released, so that the pre-embedded energetic material 15 will be heated and generate The violent explosion reaction instantly produces a powerful impact on the target chip 8 in a narrow and confined space, causing the target chip 8 to be completely damaged through penetration or crushing. This kind of penetrating or shattering physical damage is irreversible, so the damage effect is more thorough.
  • the self-destruct module 2 includes a trigger unit and an excitation unit 5 , and the trigger unit is electrically connected to the excitation unit 5 .
  • the excitation unit 5 is in contact with the target chip 8 and forms a sealed space with the target chip 8 through the sealing member 16 .
  • the trigger unit is mainly used to prevent false triggering, and a power isolation switch or fuse can be set in the trigger unit to prevent false triggering.
  • the excitation unit 5 is provided with a heating circuit 9 that can be activated and turned on in a preset manner.
  • the heating circuit 9 is coated with an energetic material 15 that can undergo a deflagration reaction when heated, and a part of the energetic material 15 is coated.
  • the side faces the target chip 8, and is heated by energizing and conducting the heating circuit 9, so as to promote the explosive reaction of the energetic material 15, and then destroy the target chip 8 in the confined space.
  • the default mode is weak current conduction.
  • the structure of the excitation unit 5 is shown in Figure 2 of the specification.
  • the main function of the energetic material 15 is chemical detonation, and any energetic material 15 known in the art can be used, preferably lead styphate sol and thermite.
  • the chemical explosion method provided by this embodiment completely destroys the physical structure of the chip, and there is no possibility of restoring the stored information.
  • the destructive effect is stronger, and the damage effect is more thorough, so as to ensure the information security of the chip.
  • the heating circuit 9 is a bridge heating circuit 9 .
  • Bridge heating circuit 9 comprises electrode pad 91, lead 92 and heating element 93, and the two ends of heating element 93 respectively connect a lead 92; One end of lead 92 connects heating element 93, and the other end connects electrode pad 91, and specific structure is as follows As shown in Figure 3 of the description.
  • the excitation unit 5 adopts a weak current excitation-chemical explosion secondary excitation structure, which can effectively reduce the impact of high current output on the load of the original system circuit 7 .
  • the bridge heating circuit 9 will form a hot zone locally, thereby stimulating the energetic material 15 coated on the bridge circuit to undergo an explosion reaction, and instantly form a huge impact force in the airtight package. , so as to realize rapid and precise destruction of the target chip 8 and avoid core information from being stolen.
  • the chip attachment is taken as an example of collecting optical signals, that is, the chip attachment integrates a photosensitive device.
  • the acquisition module 3 is integrated with a photodiode 11, and the control module 4 is integrated with a triode switch 12, a power transistor 13 and a series resistor 14; the base of the triode switch 12 is connected to the anode of the photodiode 11, and the emitter is connected to the series resistor 14 and the power transistor
  • the base of 13, the collector connects the cathode of photodiode 11 and the emitter of power triode 13.
  • the flexible cable 17, the photosensitive device and the self-destruct module 2 are connected through the copper foil circuit 18 inside the printed circuit board.
  • the substrate 1 is a polyester fiber printed circuit board, which is fixed on the surface of the target chip 8 of the system circuit 7 by screws, and a sealing member 16 is added between the target chip 8 and the self-destruct device to form a narrow sealed space.
  • the chip attachment is connected to the system circuit 7 using a flexible cable 17 and obtains power support.
  • the complete structural diagram of the chip attachment is shown in Figure 2 of the specification.
  • the photodiode 11 When the light intensity is less than 50 lux, the resistance value of the photodiode 11 decreases, the triode switch 12 is turned on, and the power triode 13 is further turned on, so as to start the self-destruct module 2 .
  • the photodiode 11 is preset to ensure that the resistance is significantly reduced when the light intensity is >50 lux, and then the triode is turned on, and then the triode is further turned on, thereby turning on the self-destruct unit and causing the energetic material 15 to explode.
  • the power triode 13 can control the circuit to pass a relatively large current, so as to realize the explosion of the energetic material 15 .
  • the entire photosensitive control circuit is designed with diodes and triodes, and its leakage current is very small when it is not working, which ensures ultra-low standby power consumption and improves the safety performance of the entire self-destruct system.
  • a chip accessory device that can realize chip self-destruction is designed.
  • On the basis of not changing the original system circuit structure by adding an accessory module with a self-destruct device to completely destroy the target chip, so as to ensure the chip's information security.
  • the self-destruct module By integrating the self-destruct module on the substrate and adopting the secondary excitation structure design of weak current excitation-chemical explosion, it can effectively reduce the impact of high current output on the original system load.
  • the heating circuit is turned on and the heat is released, so that the energetic material undergoes a violent explosion reaction when heated, and instantly produces a strong impact on the target chip in a small confined space, resulting in penetrating or crushing damage to the target chip. , and the physical damage is irrecoverable, so the damage effect is more thorough.
  • This embodiment proposes a control method for a chip attachment that can realize chip self-destruction, which is applicable to the chip attachment of Embodiment 1.
  • the method flow chart is shown in Figure 4 of the specification, and the flow chart is shown in Figure 5 of the specification .
  • the specific plan is as follows:
  • the self-destruct module is electrically integrated on the substrate, the substrate is fixedly arranged in the system circuit of the target chip, the excitation unit forms a closed space with the target chip through the sealing component, and the heating circuit coated with energetic material faces the target chip;
  • Control methods include the following:
  • the control module analyzes the information collected by the acquisition module, and judges whether it is self-destructed, and if not, restores the original state;
  • the chip attachment is taken as an example of collecting optical signals, that is, the chip attachment integrates a photosensitive device.
  • the acquisition module is integrated with a photodiode
  • the control module is integrated with a triode switch, a power transistor and a series resistor; the base of the triode switch is connected to the anode of the photodiode, the emitter is connected to the series resistor and the base of the power transistor, and the collector is connected to the photodiode
  • the cathode and the emitter of the power transistor are connected through the copper foil circuit inside the printed circuit board.
  • the base plate is made of polyester fiber printed circuit board, which is fixed on the surface of the target chip of the system circuit by screws, and a sealing component is added between the target chip and the self-destruct device to form a narrow sealed space.
  • the chip attachment device is connected to the system circuit with a flexible cable and obtains power support.
  • the triode switch is turned on, the power triode is further turned on, and then the self-destruct module is activated.
  • the triode is selected as a power triode.
  • the entire photosensitive control circuit is designed with diodes and triodes, and its leakage current is very small when it is not working, which ensures ultra-low standby power consumption and improves the safety performance of the entire self-destruct system.
  • the excitation unit is provided with a heating circuit that can be activated and conducted in a preset manner.
  • the heating circuit is coated with an energetic material that can undergo a detonation reaction when heated and faces the target chip.
  • the heating circuit is heated by energizing and conducting the heating circuit.
  • Energetic materials are excited to undergo explosion reactions, and then target chips are destroyed in confined spaces.
  • the main function of the energetic material is chemical detonation, and energetic materials in the field can be used, preferably lead styphate sol and thermite.
  • This embodiment proposes a control method for a chip attachment that can realize self-destruction of the chip, which is applicable to the chip attachment of Embodiment 1, and makes the chip attachment of Embodiment 1 into a method to make it more practical.
  • the invention provides a chip attachment device capable of self-destruction of the chip and its control method.
  • the complete destruction of the target chip is realized by adding an attachment module with a self-destruction device, thereby Ensure the information security of the chip.
  • the self-destruct module By integrating the self-destruct module on the substrate and adopting the secondary excitation structure design of weak current excitation-chemical explosion, it can effectively reduce the impact of high current output on the original system load.
  • the heating circuit is turned on and the heat is released, so that the energetic material undergoes a violent explosion reaction when heated, and instantly produces a strong impact on the target chip in a small confined space, resulting in penetrating or crushing damage to the target chip. , and the physical damage is irrecoverable, so the damage effect is more thorough.
  • each module or each step of the present invention described above can be realized by a general-purpose computing device, and they can be concentrated on a single computing device, or distributed on a network formed by multiple computing devices.
  • they can be implemented with executable program codes of computer devices, so that they can be stored in storage devices and executed by computing devices, or they can be made into individual integrated circuit modules, or a plurality of modules in them Or the steps are fabricated into a single integrated circuit module to realize.
  • the present invention is not limited to any specific combination of hardware and software.

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Abstract

本发明提供了一种可实现芯片自毁的芯片附属装置及其控制方法，芯片附属装置包括基板和电性集成在基板上的自毁模块，基板固定设置于目标芯片所在的系统电路中，并与系统电路电性连接；自毁模块包括与目标芯片接触的激发单元，激发单元通过密封部件与目标芯片形成密闭空间；激发单元上设置有能够以预设方式激发导通的加热电路，加热电路上涂敷有受热能够发生燃爆反应的含能材料并面向目标芯片。本发明提供的芯片附属装置在不改动原有系统电路结构基础上，通过激发电路导通加热电路并释放热量，使含能材料受热发生剧烈的燃爆反应，对目标芯片产生强大的冲击，致使目标芯片产生贯穿性或粉碎性的损毁效果。

Description

一种可实现芯片自毁的芯片附属装置及其控制方法 技术领域
本发明涉及信息安全和集成电路领域，具体而言，涉及一种可实现芯片自毁的芯片附属装置及其控制方法。
 背景技术
随着现代信息技术的高速发展，各类基于硅基半导体材料的微芯片和微机电系统器件在军民信息电子领域获得广泛地应用，其涉及到信息获取、分析、存储、传输等各个环节，核心部件为包含了关键技术或信息的核心芯片。
如果载有这类核心芯片的信息设备发生丢失、被窃等意外时，就有可能会导致关键技术或重要信息被窃取泄密，因此需要在产品中增加相应的自毁功能，以确保核心芯片能够在紧急情况下被及时、可靠地销毁。但对于已定型产品而言，在芯片内部设计自毁结构无异于开发新的芯片器件，增加了产品开发难度。如果能不改变核心芯片内部结构，仅对原有电路系统进行小幅度改动，通过增加具有自毁功能的模块就能够实现对核心芯片的可控自毁功能，这将会有效扩展自毁技术的应用。
目前针对芯片自毁多采用瞬间强脉冲电流击穿芯片电路致使其电学功能丧失，但芯片的物理结构损毁不彻底，存储信息仍有部分恢复的可能性。只有采用物理或化学方法彻底损毁芯片的物理结构或功能层才能确保芯片被彻底毁坏，信息不可恢复。
因此，需要一种无需改变核心芯片内部结构即可物理损毁芯片的方案能够解决上述问题。
 技术问题
基于现有技术存在的问题，本发明提供了一种可实现芯片自毁的芯片附属装置及其控制方法。
 技术解决方案
一种可实现芯片自毁的芯片附属装置，包括基板和电性集成在所述基板上的自毁模块，所述基板固定设置于目标芯片所在的系统电路中，并与所述系统电路电性连接；
所述自毁模块包括与所述目标芯片接触的激发单元，所述激发单元通过密封部件与所述目标芯片形成密闭空间；
所述激发单元上设置有能够以预设方式激发导通的加热电路，所述加热电路上涂敷有受热能够发生燃爆反应的含能材料，通过激发导通所述加热电路进行加热，以激发所述含能材料发生燃爆反应，进而在所述密闭空间内摧毁所述目标芯片。
在一个具体实施例中，所述加热电路包括电极焊盘、导线和加热元件；
所述加热元件的两端各连接一个所述导线；
所述导线的一端连接所述加热元件，另一端连接所述电极焊盘。
在一个具体实施例中，所述自毁模块还包括防止误触发的触发单元，所述触发单元与所述激发单元电性连接；
所述触发单元中设置有电源隔离开关或保险丝。
在一个具体实施例中，还包括采集模块和控制模块，所述控制模块电性集成在所述基板上；
所述控制模块分别连接所述采集模块和所述自毁模块，用以根据所述采集模块采集的信息控制所述自毁模块的运行。
在一个具体实施例中，所述采集模块中集成有光敏二极管，所述控制模块中集成有三极管开关、功率三极管和串联电阻；
所述三极管开关的基极连接所述光敏二极管的正极，发射极连接所述串联电阻和功率三极管的基极，集电极连接所述光敏二极管的负极和所述功率三极管的发射极。
在一个具体实施例中，在光强度小于50lux时，所述光敏二极管的电阻值降低，导通所述三极管开关，进一步导通所述功率三极管，进而启动所述自毁模块。
在一个具体实施例中，所述采集模块包括光敏传感器、和/或力敏传感器、和/或重力传感器；
和/或所述含能材料包括斯蒂芬酸铅溶胶和铝热剂。
一种可实现芯片自毁的芯片附属装置的控制方法，适用于上述任一项所述的芯片附属装置，控制方法包括如下：
自毁模块电性集成在基板上，将所述基板固定设置在目标芯片的系统电路中，激发单元通过密封部件与所述目标芯片形成密闭空间，且涂敷有含能材料的加热电路朝向所述目标芯片；
满足预设自毁条件后，在所述激发单元上以预设方式激发导通所述加热电路；
经所述加热电路加热到预设温度后，所述加热电路上涂敷的含能材料发生燃爆反应，在所述密闭空间内形成冲击，摧毁所述目标芯片。
在一个具体实施例中，所述芯片附属装置还包括触发装置、采集装置和控制装置，所述控制方法还包括：
通过所述采集模块采集系统电路的信息，并发送给所述控制装置；
所述控制模块分析所述采集模块采集的信息，在满足预设自毁条件后，发出自毁指令；
解除所述触发装置的误触发设置，激发所述激发模块自毁。
在一个具体实施例中，所述采集模块中集成有光敏二极管，所述控制模块中集成有三极管开关、功率三极管和串联电阻；
在光强度小于50lux时，所述光敏二极管的电阻值降低，导通所述三极管开关，进一步导通所述功率三极管，进而启动所述自毁模块。
 有益效果
本发明具有如下有益效果：
本发明提供了一种可实现芯片自毁的芯片附属装置及其控制方法，在不改动原有系统电路结构基础上，通过增加具有自毁装置的附属模块以实现对目标芯片的彻底销毁，从而确保芯片的信息安全。通过基板集成自毁模块，采用弱电流激发-化学燃爆的二级激发结构设计，能有效降低大电流输出对原系统载荷的影响。通过激发电路导通加热电路并释放热量，使含能材料受热发生剧烈的燃爆反应，瞬间在狭小的密闭空间内对目标芯片产生强大的冲击，致使目标芯片产生贯穿性或粉碎性的损毁效果，且该物理性损毁具有不可恢复性，因而损毁效果更彻底。
 附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。
图1是本发明实施例的芯片附属装置的结构示意图；
图2是本发明实施例的芯片附属装置的完整结构示意图；
图3是本发明实施例的加热电路结构示意图；
图4是本发明实施例的控制方法流程示意图；
图5是本发明实施例的控制方法原理示意图。
附图标记：
1-基板；2-自毁模块；3-采集模块；4-控制模块；5-激发单元；7-系统电路；8-目标芯片；9-加热电路；10-自毁装置；11-光电二极管；12-三极管开关；13-功率三极管；14-串联电阻；15-含能材料；16-密封部件；17-柔性排线；18-铜箔线路；91-电极焊盘；92-导线；93-加热元件。
 本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例1
本实施例提出了一种可实现芯片自毁的芯片附属装置，芯片附属装置的结构示意图如说明书附图1所示。具体方案如下:
一种可实现芯片自毁的芯片附属装置，芯片附属装置包括基板1和电性集成在基板1上的自毁模块2，基板1固定设置于目标芯片8所在的系统电路7中，并与系统电路7电性连接。此外，基板1上还可集成采集模块3、控制模块4等，控制模块4分别连接采集模块3和自毁模块2，用以根据采集模块3采集的信息控制自毁模块2的运行。具体地，可根据应用需求集成传感器、逻辑芯片等功能器件，以实现特定状况下的快速自毁功能。
本实施例提供的芯片附属装置，无需改变芯片内部结构，只需对芯片所在的系统电路7进行小幅度改动，将芯片附属装置接入芯片所在的系统电路7，即可实现对目标芯片8的自毁。
具体地，基板1电路为印刷线路板，可与目标芯片8所在的系统电路7电性连接。在本实施例中，基板1可通过连接件固定连接在目标芯片8底部或顶部，并通过接插件与系统电路7连通以获取电力支持。如通过螺丝或接插件固定设置在系统电路7的目标芯片8表面，并在目标芯片8与自毁模块2之间增加密封部件16以形成狭小的密封空间。根据系统电路7的总体结构，基板1采用柔性排线17与系统电路7相连并获取电力支持。优选地，基板1电路采用PCB工艺制成，并根据集成的硬件配置需求规划电路图，可将传感器、逻辑芯片、自毁装置串联。
采集模块3包括光敏传感器、和/或力敏传感器、和/或重力传感器。控制模块4中设置有逻辑处理器，逻辑处理器包括但不限于任何一种已知的逻辑芯片，其主要用于对传感器所采集的数据信息进行分析核实，并与预设阈值比对以确定是否启动自毁程序。当传感器获取的系统电路7的环境信息达到某个预设触发条件时，经逻辑芯片分析确认后将激活自毁程序，进而导通激发电路并释放热量，使预埋的含能材料15受热发生剧烈的燃爆反应，瞬间在狭小的密闭空间内对目标芯片8产生强大的冲击，致使目标芯片8产生贯穿或粉碎性的彻底损毁。这种贯穿或粉碎性的物理性损毁具有不可恢复性，因而损毁效果更彻底。
具体地，自毁模块2包括触发单元和激发单元5，触发单元与激发单元5电性连接。激发单元5与目标芯片8接触，并通过密封部件16与目标芯片8形成密闭空间。触发单元主要用于防止误触发，触发单元中可设置电源隔离开关或保险丝，以此来防止误触发。
其中，激发单元5上设置有能够以预设方式激发导通的加热电路9，加热电路9上涂敷有受热能够发生燃爆反应的含能材料15，且涂敷有含能材料15的一侧面向目标芯片8，通过激发导通加热电路9进行加热，以促使含能材料15发生燃爆反应，进而在密闭空间内摧毁目标芯片8。在本实施例中，预设方式为弱电流导通。激发单元5的结构如说明书附图2所示。含能材料15主要作用是化学燃爆，其可以采用任何一种本领域已知的含能材料15，优选斯蒂芬酸铅溶胶和铝热剂。相比现有技术中采用瞬间强脉冲电流击穿芯片电路致使其电学功能丧失，本实施例提供的化学燃爆方式彻底损毁了芯片的物理结构，存储信息不存在恢复的可能性，对芯片电路的毁灭性更强，损毁效果更彻底，从而确保芯片的信息安全。
在本实施例中，加热电路9为桥式加热电路9。桥式加热电路9包括电极焊盘91、导线92和加热元件93，加热元件93的两端各连接一个导线92；导线92的一端连接加热元件93，另一端连接电极焊盘91，具体结构如说明书附图3所示。激发单元5采用弱电流激发-化学燃爆的二级激发结构，能有效降低大电流输出对原系统电路7载荷的影响。当激发电流导通时会使桥式加热电路9在局部形成热区，从而激发涂敷在桥式电路上的含能材料15发生燃爆反应，瞬间在密闭的封装壳内形成巨大的冲击力，从而实现对目标芯片8快速、精准地摧毁，避免核心信息被窃取。
在本实施例中，芯片附属装置以采集光信号为例，即芯片附属装置集成了光敏器件。采集模块3中集成有光敏二极管11，控制模块4中集成有三极管开关12、功率三极管13和串联电阻14；三极管开关12的基极连接光敏二极管11的正极，发射极连接串联电阻14和功率三极管13的基极，集电极连接光敏二极管11的负极和功率三极管13的发射极。通过印刷线路板内部的铜箔线路18将柔性排线17、光敏器件和自毁模块2相连。基板1采用聚酯纤维印刷线路板，通过螺丝固定在系统电路7的目标芯片8表面，并在目标芯片8与自毁装置之间增加密封部件16以形成狭小的密封空间。根据系统电路7的总体结构，芯片附属装置采用柔性排线17与系统电路7相连并获取电力支持。完整的芯片附属装置结构图如说明书附图2所示。
在光强度小于50lux时，光敏二极管11的电阻值降低，导通三极管开关12，进一步导通功率三极管13，进而启动自毁模块2。光敏二极管11经预置后能确保在光强>50 lux时电阻明显降低，进而导通三极管，再进一步导通三极管，从而开启自毁单元，引发含能材料15爆炸。功率三极管13能控制电路通过较大的电流，以实现含能材料15燃爆。同时，整个光敏控制电路采用二极管和三极管设计，其在未工作状态时漏电流很小，保证了超低待机功耗，提升了整个自毁系统的安全性能。
本实施例设计了一种可实现芯片自毁的芯片附属装置，在不改动原有系统电路结构基础上，通过增加具有自毁装置的附属模块以实现对目标芯片的彻底销毁，从而确保芯片的信息安全。通过基板集成自毁模块，采用弱电流激发-化学燃爆的二级激发结构设计，能有效降低大电流输出对原系统载荷的影响。通过激发电路导通加热电路并释放热量，使含能材料受热发生剧烈的燃爆反应，瞬间在狭小的密闭空间内对目标芯片产生强大的冲击，致使目标芯片产生贯穿性或粉碎性的损毁效果，且该物理性损毁具有不可恢复性，因而损毁效果更彻底。
实施例2
本实施例提出了一种可实现芯片自毁的芯片附属装置的控制方法，适用于实施例1的芯片附属装置，方法流程图如说明书附图4所示，流程框图如说明书附图5所示。具体方案如下：
自毁模块电性集成在基板上，将基板固定设置在目标芯片的系统电路中，激发单元通过密封部件与目标芯片形成密闭空间，且涂敷有含能材料的加热电路朝向目标芯片；
控制方法包括如下：
101、通过采集模块采集系统电路的信息，并发送给控制装置；
102、控制模块分析采集模块采集的信息，并判断是否自毁，若否，则恢复原始状态；
103、若是，则解除触发单元上的保险；
104、在激发单元上以预设方式激发导通加热电路，经加热电路加热到预设温度后，加热电路上涂敷的含能材料发生燃爆反应，在密闭空间内形成冲击，摧毁目标芯片。
在本实施例中，芯片附属装置以采集光信号为例，即芯片附属装置集成了光敏器件。采集模块中集成有光敏二极管，控制模块中集成有三极管开关、功率三极管和串联电阻；三极管开关的基极连接光敏二极管的正极，发射极连接串联电阻和功率三极管的基极，集电极连接光敏二极管的负极和功率三极管的发射极。通过印刷线路板内部的铜箔线路将柔性排线、光敏器件和自毁模块相连。基板采用聚酯纤维印刷线路板，通过螺丝固定在系统电路的目标芯片表面，并在目标芯片与自毁装置之间增加密封部件以形成狭小的密封空间。根据系统电路的总体结构，芯片附属装置采用柔性排线与系统电路相连并获取电力支持。在光强度小于50lux时，光敏二极管的电阻值降低，导通三极管开关，进一步导通功率三极管，进而启动自毁模块。为了能控制系统电路通过较大的电流，三极管选择了功率性三极管。同时，整个光敏控制电路采用二极管和三极管设计，其在未工作状态时漏电流很小，保证了超低待机功耗，提升了整个自毁系统的安全性能。
其中，激发单元上设置有能够以预设方式激发导通的加热电路，加热电路上涂敷有受热能够发生燃爆反应的含能材料并面向目标芯片，通过激发导通加热电路进行加热，以激发含能材料发生燃爆反应，进而在密闭空间内摧毁目标芯片。含能材料主要作用是化学燃爆，其可以采用本领域的含能材料，优选斯蒂芬酸铅溶胶和铝热剂。
本实施例提出了一种可实现芯片自毁的芯片附属装置的控制方法，适用于实施例1的芯片附属装置，将实施例1的芯片附属装置方法化，使其更具实用性。
本发明提供了一种可实现芯片自毁的芯片附属装置及其控制方法，在不改动原有系统电路结构基础上，通过增加具有自毁装置的附属模块以实现对目标芯片的彻底销毁，从而确保芯片的信息安全。通过基板集成自毁模块，采用弱电流激发-化学燃爆的二级激发结构设计，能有效降低大电流输出对原系统载荷的影响。通过激发电路导通加热电路并释放热量，使含能材料受热发生剧烈的燃爆反应，瞬间在狭小的密闭空间内对目标芯片产生强大的冲击，致使目标芯片产生贯穿性或粉碎性的损毁效果，且该物理性损毁具有不可恢复性，因而损毁效果更彻底。
本领域普通技术人员应该明白，上述的本发明的各模块或各步骤可以用通用的计算装置来实现，它们可以集中在单个计算装置上，或者分布在多个计算装置所组成的网络上，可选地，他们可以用计算机装置可执行的程序代码来实现，从而可以将它们存储在存储装置中由计算装置来执行，或者将它们分别制作成各个集成电路模块，或者将它们中的多个模块或步骤制作成单个集成电路模块来实现。这样，本发明不限制于任何特定的硬件和软件的结合。
注意，上述仅为本发明的较佳实施例及所运用技术原理。本领域技术人员会理解，本发明不限于这里的特定实施例，对本领域技术人员来说能够进行各种明显的变化、重新调整和替代而不会脱离本发明的保护范围。因此，虽然通过以上实施例对本发明进行了较为详细的说明，但是本发明不仅仅限于以上实施例，在不脱离本发明构思的情况下，还可以包括更多其他等效实施例，而本发明的范围由所附的权利要求范围决定。
以上公开的仅为本发明的几个具体实施场景，但是，本发明并非局限于此，任何本领域的技术人员能思之的变化都应落入本发明的保护范围。

Claims (10)

  1. 一种可实现芯片自毁的芯片附属装置，其特征在于，包括基板和电性集成在所述基板上的自毁模块，所述基板固定设置于目标芯片所在的系统电路上，并与所述系统电路电性连接；
    所述自毁模块包括与所述目标芯片接触的激发单元，所述激发单元通过密封部件与所述目标芯片形成密闭空间；
    所述激发单元上设置有能够以预设方式激发导通的加热电路，所述加热电路上涂敷有受热能够发生燃爆反应的含能材料，通过激发导通所述加热电路进行加热，以激发所述含能材料发生燃爆反应，进而在所述密闭空间内摧毁所述目标芯片。
  2. 根据权利要求1所述的芯片附属装置，其特征在于，所述加热电路包括电极焊盘、导线和加热元件；
    所述加热元件的两端各连接一个所述导线；
    所述导线的一端连接所述加热元件，另一端连接所述电极焊盘。
  3. 根据权利要求1所述的芯片附属装置，其特征在于，所述自毁模块还包括防止误触发的触发单元，所述触发单元与所述激发单元电性连接；
    所述触发单元中设置有电源隔离开关或保险丝。
  4. 根据权利要求1所述的芯片附属装置，其特征在于，还包括采集模块和控制模块，所述控制模块电性集成在所述基板上；
    所述控制模块分别连接所述采集模块和所述自毁模块，用以根据所述采集模块采集的信息控制所述自毁模块的运行。
  5. 根据权利要求4所述的芯片附属装置，其特征在于，所述采集模块中集成有光敏二极管，所述控制模块中集成有三极管开关、功率三极管和串联电阻；
    所述三极管开关的基极连接所述光敏二极管的正极，发射极连接所述串联电阻和功率三极管的基极，集电极连接所述光敏二极管的负极和所述功率三极管的发射极。
  6. 根据权利要求5所述的芯片附属装置，其特征在于，在光强度小于50lux时，所述光敏二极管的电阻值降低，导通所述三极管开关，进一步导通所述功率三极管，进而启动所述自毁模块。
  7. 根据权利要求4所述的芯片附属装置，其特征在于，所述采集模块包括光敏传感器、和/或力敏传感器、和/或重力传感器；
    和/或所述含能材料包括斯蒂芬酸铅溶胶和铝热剂。
  8. 一种可实现芯片自毁的芯片附属装置的控制方法，其特征在于，适用于权利要求1-7任一项所述的芯片附属装置，控制方法包括如下：
    自毁模块电性集成在基板上，将所述基板固定设置在目标芯片的系统电路中，激发单元通过密封部件与所述目标芯片形成密闭空间，且涂敷有含能材料的加热电路朝向所述目标芯片；
    满足预设自毁条件后，在所述激发单元上以预设方式激发导通所述加热电路；
    经所述加热电路加热到预设温度后，所述加热电路上涂敷的含能材料发生燃爆反应，在所述密闭空间内形成冲击，摧毁所述目标芯片。
  9. 根据权利要求8所述的控制方法，其特征在于，所述芯片附属装置还包括触发装置、采集装置和控制装置，所述控制方法还包括：
    通过所述采集模块采集系统电路的信息，并发送给所述控制装置；
    所述控制模块分析所述采集模块采集的信息，在满足预设自毁条件后，发出自毁指令；
    解除所述触发装置的误触发设置，激发所述激发模块自毁。
  10. 根据权利要求9所述的控制方法，其特征在于，所述采集模块中集成有光敏二极管，所述控制模块中集成有三极管开关、功率三极管和串联电阻；
    在光强度小于50lux时，所述光敏二极管的电阻值降低，导通所述三极管开关，进一步导通所述功率三极管，进而启动所述自毁模块。
PCT/CN2021/137749 2021-09-22 2021-12-14 一种可实现芯片自毁的芯片附属装置及其控制方法 Ceased WO2023045113A1 (zh)

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