WO2023040757A1 - 一种等离子刻蚀腔的清洗方法及应用 - Google Patents

一种等离子刻蚀腔的清洗方法及应用 Download PDF

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WO2023040757A1
WO2023040757A1 PCT/CN2022/118025 CN2022118025W WO2023040757A1 WO 2023040757 A1 WO2023040757 A1 WO 2023040757A1 CN 2022118025 W CN2022118025 W CN 2022118025W WO 2023040757 A1 WO2023040757 A1 WO 2023040757A1
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Prior art keywords
cleaning
etching chamber
plasma etching
sccm
coupled plasma
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PCT/CN2022/118025
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English (en)
French (fr)
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梁枫
杨宇新
李雪冬
刘小波
李佳鹤
彭泰彦
许开东
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江苏鲁汶仪器有限公司
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Priority to KR1020247009651A priority Critical patent/KR20240055013A/ko
Priority to EP22869126.7A priority patent/EP4403270A1/en
Publication of WO2023040757A1 publication Critical patent/WO2023040757A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma

Definitions

  • the invention belongs to the technical field of semiconductors, and in particular relates to a cleaning method and application of a plasma etching chamber.
  • etching is a common process step, which uses chemical or physical methods to etch specific patterns from the surface of the substrate. Etching is divided into dry etching and wet etching. In dry etching technology, reactive ion etching (RIE) has been widely used in many fields due to its good selectivity, high anisotropy and etching precision. got applied.
  • RIE reactive ion etching
  • Reactive ion etching refers to the use of a high-frequency electric field in a chamber with a certain degree of vacuum to make the etching gas glow discharge to generate ions, electrons, free radicals and other active substances with high energy.
  • Etching process includes both physical and chemical effects.
  • the physical effect is the process in which ions obtain high kinetic energy under an electric field to bombard the sample surface to produce sputtering etching on the sample.
  • the chemical effect is the process of highly chemically active ions, electrons, and free The process of chemical interaction between the substrate and the surface substance of the sample.
  • etching equipment etch materials are very single (such as Pt, Ru, Ir, NiFe, Au, etc.), so the cleaning process is also relatively simple, only for a specific material.
  • metal gate materials such as Mo, Ta, etc.
  • high-permittivity gate materials such as Al2O3 , HfO2 and ZrO2, etc.
  • the demand for dry etching of new non-volatile materials is increasing.
  • the film layer of MRAM is very complex and has many different materials. Therefore, mixed metal and SiO contamination will be generated in the chamber after etching, which is difficult to be removed by the vacuum pump.
  • the object of the present invention is to provide a kind of cleaning method and application of plasma etching chamber, the method among the present invention all has excellent cleaning effect for the mixed contamination of metal and SiO attached on the cavity wall and window.
  • the invention provides a method for cleaning a plasma etching chamber, comprising the following steps:
  • the cleaning sheet is placed in the plasma etching chamber after the sample processing is completed, and an inert gas is introduced to perform capacitively coupled plasma cleaning;
  • the chemical cleaning gas includes one or more of CH 2 F 2 , BCl 3 , CF 4 , NF 3 , SF 6 , Cl 2 , and O 2 .
  • the inert gas includes one or more of He, Kr, Ne, Ar and Xe.
  • 1-200 sccm of O 2 is also fed during the capacitively coupled plasma cleaning.
  • the RF power of the capacitively coupled plasma cleaning is 500-2000W
  • the cavity pressure is 10-50mT
  • the total gas flow rate is 100-500 sccm.
  • 50-300 sccm of inert gas is also passed through during the inductively coupled plasma cleaning.
  • the RF power of the inductively coupled plasma cleaning is 500-2000W
  • the cavity pressure is 10-50mT
  • the total gas flow rate is 100-500 sccm.
  • the plasma etching chamber is provided with electrodes parallel to the window, and a Faraday shielding device and a radio frequency coil are provided outside the window.
  • the present invention provides the application of the above-mentioned cleaning method in cleaning the mixed contamination of metal and SiO in the plasma etching chamber.
  • the metal and SiO mixed contamination is located at the window and cavity wall.
  • the metal is one or more of Ru, Ta, TiN, Cu, Ag, Al, Pt and Mg.
  • the invention provides a method for cleaning a plasma etching chamber, comprising the following steps: A) placing a cleaning sheet in the plasma etching chamber after sample processing is completed, feeding an inert gas to perform capacitively coupled plasma cleaning; B) then A chemical cleaning gas is introduced to perform inductively coupled plasma cleaning; the chemical cleaning gas includes one or more of CH 2 F 2 , CF 4 , NF 3 , SF 6 , and O 2 .
  • the present invention performs CCP Faraday physical cleaning first in the plasma etching chamber, and then performs ICP chemical cleaning, which not only can have a good cleaning effect on the cavity wall and window of the plasma etching chamber, but also, the present invention uses different gas Combined, it improves the cleaning ability of various metal stains.
  • FIG. 1 is a schematic structural view of a plasma etching chamber in an embodiment of the present invention
  • 1 is a cleaning sheet
  • 2 is a cavity wall
  • 3 is a window
  • 4 is a Faraday shielding device
  • 5 is an air inlet
  • 6 is a radio frequency coil
  • 7 is an electrode.
  • the invention provides a method for cleaning a plasma etching chamber, comprising the following steps:
  • the cleaning sheet is placed in the plasma etching chamber after the sample processing is completed, and an inert gas is introduced to perform capacitively coupled plasma cleaning;
  • the chemical cleaning gas includes one or more of CH 2 F 2 , CF 4 , NF 3 , SF 6 , and O 2 .
  • the plasma etching chamber has the structure shown in FIG. 1 , electrodes are arranged inside the plasma etching chamber, the electrodes are parallel to the window and the Faraday shielding device arranged outside the window, and the outside of the window is A radio frequency coil is also provided for generating plasma by inductive coupling.
  • the window is also provided with an air inlet.
  • the plasma etching chamber is also equipped with two radio frequency matching devices, one matching device is used to load radio frequency power to the Faraday layer (Faraday shielding device), the other is used to load radio frequency power to the inner and outer coils (radio frequency coils), and the two radio frequency matching Both devices are controlled by an RF power supply.
  • the inside of the plasma etching chamber is provided with electrodes, and the electrodes are arranged in parallel with the window and the Faraday shielding device.
  • the RF power supply When performing Faraday physical cleaning (capacitively coupled plasma cleaning), the RF power supply is connected to the Faraday RF matcher, coil matcher Without electricity, all the power from the Faraday matching device is loaded on the Faraday layer, and the cleaning gas is ionized on the upper part of the cavity through capacitive coupling to form active plasma, and the capacitively coupled plasma cleaning is performed on the lower surface of the coupling window.
  • the RF power supply is connected to the inner and outer coil matchers, the Faraday matcher is not powered, and the coil generates active plasma through inductive coupling to clean the cavity wall.
  • the metal contamination can be Ru, Ta, TiN, Cu, Ag, etc.; the metal and SiO SiO contamination is distributed on both the chamber wall and the lower surface of the window in the chamber.
  • the cleaning sheet is firstly conveyed to the inside of the chamber, and then the inert gas is introduced, the radio frequency power supply is connected to the Faraday radio frequency matching device, and the Faraday layer is energized to perform capacitively coupled plasma cleaning.
  • the cleaning sheet is coated with SiO on a bare silicon chip and placed on the surface of the electrode to protect the ESC and prevent the cleaned material from contaminating the surface of the ESC.
  • the inert gas is preferably one or more of He, Kr, Ne, Ar and Xe.
  • a certain proportion of O 2 is introduced together with the inert gas, which can further Improve cleaning effect.
  • the O2 flow rate is preferably 1 to 200 sccm, more preferably 50 to 150 sccm, most preferably 80 to 120 sccm;
  • the RF power of the capacitively coupled plasma cleaning is preferably 500-2000W, more preferably 1000-1500W, such as 500W, 600W, 700W, 800W, 900W, 1000W, 1100W, 1200W, 1300W, 1400W, 1500W, 1600W, 1700W, 1800W, 1900W, 2000W, preferably a range value with any of the above values as the upper or lower limit;
  • the cavity pressure is preferably 10-50mT, more preferably 20-40mT, such as 10mT, 15mT, 20mT, 25mT, 30mT, 35mT, 40mT, preferably a range value with any of the above values as the upper or lower limit;
  • the total gas flow rate is preferably 100 to 500 sccm, more preferably 200 to 400 sccm, such as 100 sccm, 150 sccm, 200 sccm, 250 sccm, 300 sccm, 350 sccm, 400 sccm, 450 sccm, 500 sccm, preferably in the range with any of the above values as the upper or lower limit value;
  • the time for the capacitively coupled plasma cleaning is preferably 2-5 minutes, more preferably 3-4 minutes, such as 2 minutes, 3 minutes, 4 minutes, 5 minutes, preferably within a range with any of the above values as the upper limit or lower limit.
  • the cleaning time is related to the etching time. If the etching time is long and the amount of etching is large, the resulting contamination will also increase, and the corresponding cleaning time should also be extended.
  • the present invention injects chemical cleaning gas into the etching chamber, connects the radio frequency power supply to the inner and outer coil matching devices, and performs inductive coupling plasma cleaning without powering on the Faraday matching device.
  • the chemical cleaning gas includes one or more of CH 2 F 2 , CF 4 , NF 3 , SF 6 , O 2 , preferably, when performing the inductively coupled plasma cleaning, also A certain proportion of inert gas may be introduced, and the flow rate of the inert gas is preferably 50-300 sccm, more preferably 100-250 sccm, and most preferably 150-200 sccm.
  • the inert gas is introduced to start the ignition, and then the chemical cleaning gas is introduced.
  • the RF power of the inductively coupled plasma cleaning is preferably 500-2000W, more preferably 1000-1500W, such as 500W, 600W, 700W, 800W, 900W, 1000W, 1100W, 1200W, 1300W, 1400W, 1500W, 1600W, 1700W, 1800W, 1900W, 2000W, preferably a range value with any of the above values as the upper or lower limit;
  • the cavity pressure is preferably 10-50mT, more preferably 20-40mT, such as 10mT, 15mT, 20mT, 25mT, 30mT, 35mT, 40mT, preferably a range value with any of the above values as the upper or lower limit;
  • the total gas flow rate is preferably 100 to 500 sccm, more preferably 200 to 400 sccm, such as 100 sccm, 150 sccm, 200 sccm, 250 sccm, 300 sccm, 350 sccm, 400 sccm, 450 sccm, 500 sccm, preferably in the range with any of the above values as the upper or lower limit value;
  • the time for the capacitively coupled plasma cleaning is preferably 2-5 minutes, more preferably 3-4 minutes, such as 2 minutes, 3 minutes, 4 minutes, 5 minutes, preferably within a range with any of the above values as the upper limit or lower limit.
  • the cleaning time is related to the etching time. If the etching time is long and the amount of etching is large, the resulting contamination will also increase, and the corresponding cleaning time should also be extended.
  • the invention provides a method for cleaning a plasma etching chamber, comprising the following steps: A) placing a cleaning sheet in the plasma etching chamber after sample processing is completed, feeding an inert gas to perform capacitively coupled plasma cleaning; B) then A chemical cleaning gas is introduced to perform inductively coupled plasma cleaning; the chemical cleaning gas includes one or more of CH 2 F 2 , CF 4 , NF 3 , SF 6 , and O 2 .
  • the present invention performs CCP Faraday physical cleaning first in the plasma etching chamber, and then performs ICP chemical cleaning, which not only can have a good cleaning effect on the cavity wall and window of the plasma etching chamber, but also, the present invention uses different gas Combined, it improves the cleaning ability of various metal stains.
  • the following examples all correspond to the mixed contamination caused by the etching amount of about 50nm Metal (TiN, Ta, Mg, Ru, Cu, etc.) and about 50nm SiO.
  • the power is increased to 2000W, and the cavity pressure is controlled to 20mT;
  • the power is increased to 2000W, and the cavity pressure is controlled to 40mT;
  • Collect particle data the number of 0.07 ⁇ m and 0.12 ⁇ m particles is about 20, and the cleaning effect is better.
  • the power is increased to 2000W, and the cavity pressure is controlled to 20mT;
  • the power is increased to 2000W, and the cavity pressure is controlled to 40mT;
  • Collect particle data the number of 0.07 ⁇ m and 0.12 ⁇ m particles is about 20, and the cleaning effect is better.
  • the CCP process in Comparative Example 1 is the same as the CCP process in Example 2.
  • Collect particle data the number of 0.07 ⁇ m and 0.12 ⁇ m particles is greater than 100, and the cleaning effect is poor.
  • the ICP process in Comparative Example 2 is the same as the ICP process in Example 2.
  • Collect particle data the number of 0.07 ⁇ m and 0.12 ⁇ m particles are both 40-50, and the cleaning effect is average.
  • the CCP process in Comparative Example 3 is the same as the CCP process in Example 1.
  • Collect particle data the number of 0.07 ⁇ m and 0.12 ⁇ m particles is greater than 100, and the cleaning effect is poor.
  • the ICP process in Comparative Example 4 is the same as the ICP process in Example 1.
  • Collect particle data the number of 0.07 ⁇ m and 0.12 ⁇ m particles is about 50, and the cleaning effect is average.

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Abstract

一种等离子刻蚀腔的清洗方法，包括以下步骤：A）将清洗片（1）置于完成样品加工后的等离子刻蚀腔内，通入惰性气体,进行电容耦合等离子体清洗；B）然后通入化学清洗气体，进行电感耦合等离子体清洗；化学清洗气体包括CH2F2、如4、NF3、SF6、O2中的一种或几种。通过在等离子刻蚀腔中先进行CCP法拉第物理清洗，然后再进行ICP化学清洗，不仅能够对等离子刻蚀腔的腔壁和窗口都有较好的清洗效果，而且通过不同的气体组合，提升了对多种金属沾污的清洗能力

Description

一种等离子刻蚀腔的清洗方法及应用
本申请要求于2021年09月17日提交中国专利局、申请号为202111092346.5、发明名称为“一种等离子刻蚀腔的清洗方法及应用”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明属于半导体技术领域，尤其涉及一种等离子刻蚀腔的清洗方法及应用。
背景技术
在集成电路制造工艺和MEMS工艺中，刻蚀是一个常见的工艺步骤，它是利用化学或物理方法从基底表面刻蚀出特定图案。刻蚀分为干法蚀刻和湿法蚀刻两种，而在干法蚀刻技术中，反应离子蚀刻(RIE)由于具有良好的选择性、高的各向异性和刻蚀精度，使得其在许多领域得到了应用。
反应离子刻蚀(RIE)指的是在具有一定真空度的腔室中，利用高频电场使刻蚀气体辉光放电产生离子、电子、游离基等具有高能量的活性物质，对样品表面进行刻蚀的过程。刻蚀过程包含物理和化学两方面的作用，物理作用是离子在电场下获得很高的动能轰击样品表面对样品产生溅射刻蚀的过程，化学作用是具有高化学活性的离子、电子、游离基与样品表面物质发生化学作用的过程。
目前，大部分刻蚀设备刻蚀的材料都很单一(如Pt、Ru、Ir、NiFe、Au等)，所以清洗工艺也较为单一，仅仅是针对某种特定材料。但是，随着近年来第三代存储器——磁存储器(MRAM)的不断发展和集成度的不断提高，对金属栅极材料(如Mo、Ta等)和高介电系数栅极材料(如Al2O3、HfO2和ZrO2等)等新型非挥发性材料的干法刻蚀需求不断增加。MRAM的膜层是很复杂的，有很多不同的材料，因此，刻蚀结束后会在腔室中产生金属和SiO混合沾污，难以被真空泵抽走，这不仅会产生颗粒沾污，也会导致工艺随时间推移，使工艺过程的重复性下降。为了解决非挥发性材料在干法刻蚀过程中产生的侧壁沉积和颗粒沾污，提高等离子体腔室的清洗工艺效率是十分必要的。
发明内容
本发明的目的在于提供一种等离子刻蚀腔的清洗方法及应用，本发明中的 方法对于腔壁和窗口上附着的金属和SiO混合沾污均具有优异的清洗效果。
本发明提供一种等离子刻蚀腔的清洗方法，包括以下步骤：
A)将清洗片置于完成样品加工后的等离子刻蚀腔内，通入惰性气体，进行电容耦合等离子体清洗；
B)然后通入化学清洗气体，进行电感耦合等离子体清洗；
所述化学清洗气体包括CH 2F 2、BCl 3、CF 4、NF 3、SF 6、Cl 2、O 2中的一种或几种。
优选的，所述惰性气体包括He、Kr、Ne、Ar和Xe中的一种或几种。
优选的，所述电容耦合等离子体清洗时还通入1～200sccm的O 2。
优选的，所述电容耦合等离子体清洗的射频功率为500～2000W，腔体压力为10～50mT，总的气体流量为100～500sccm。
优选的，所述电感耦合等离子体清洗时还通入50～300sccm的惰性气体。
优选的，所述电感耦合等离子体清洗的射频功率为500～2000W，腔体压力为10～50mT，总的气体流量为100～500sccm。
优选的，所述等离子刻蚀腔内设置有与窗口平行的电极，所述窗口外部设置有法拉第屏蔽装置和射频线圈。
本发明提供如上文所述的清洗方法在清洗等离子刻蚀腔内金属和SiO混合沾污时的应用。
优选的，所述金属和SiO混合沾污位于窗口和腔壁处。
优选的，所述金属为Ru、Ta、TiN、Cu、Ag、Al、Pt和Mg中的一种或几种。
本发明提供一种等离子刻蚀腔的清洗方法，包括以下步骤：A)将清洗片置于完成样品加工后的等离子刻蚀腔内，通入惰性气体，进行电容耦合等离子体清洗；B)然后通入化学清洗气体，进行电感耦合等离子体清洗；所述化学清洗气体包括CH 2F 2、CF 4、NF 3、SF 6、O 2中的一种或几种。本发明在等离子刻蚀腔中先进行CCP法拉第物理清洗，然后在进行ICP化学清洗，不仅能够对等离子刻蚀腔的腔壁和窗口都有较好的清洗效果，而且，本发明通过不同的气体组合，提升了对多种金属沾污的清洗能力。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据提供的附图获得其他的附图。
图1为本发明实施例中等离子刻蚀腔的结构示意图；
1为清洗片，2为腔壁，3为窗口，4为法拉第屏蔽装置，5为进气口，6为射频线圈，7为电极。
具体实施方式
本发明提供一种等离子刻蚀腔的清洗方法，包括以下步骤：
A)将清洗片置于完成样品加工后的等离子刻蚀腔内，通入惰性气体，进行电容耦合等离子体清洗；
B)然后通入化学清洗气体，进行电感耦合等离子体清洗；
所述化学清洗气体包括CH 2F 2、CF 4、NF 3、SF 6、O 2中的一种或几种。
在本发明中，所述等离子刻蚀腔具有图1所示结构，所述等离子刻蚀腔内部设置有电极，所述电极与窗口以及设置在窗口外部的法拉第屏蔽装置平行，所述窗口的外部还设置有射频线圈，用于电感耦合产生等离子体。所述窗口还设置有进气口。
所述等离子刻蚀腔还配置有两个射频匹配器，一个匹配器用来给法拉第层(法拉第屏蔽装置)加载射频功率，另一个用来给内外线圈(射频线圈)加载射频功率，两个射频匹配器均由一个射频电源控制。所述等离子刻蚀腔内部设置有电极，所述电极与窗口以及法拉第屏蔽装置平行设置，在进行法拉第物理清洗(电容耦合等离子体清洗)时，将射频电源连接至法拉第射频匹配器，线圈匹配器不通电，法拉第匹配器发出的功率全部加载到法拉第层上，通过电容耦合在腔体上部电离清洗气体，形成活性等离子体，对耦合窗下表面进行电容耦合等离子体清洗。当进行ICP化学清洗时，将射频电源连接至内外线圈匹配器，法拉第匹配器不通电，线圈通过电感耦合产生活性等离子体，对腔壁进行清洗。
在本发明中，所述等离子刻蚀腔内完成样品加工后，腔室内存在金属与SiO的混合沾污，所述金属沾污可以是Ru、Ta、TiN、Cu、Ag等；所述金属和SiO 沾污在腔室内的腔壁和窗口下表面均有分布。
本发明首先将清洗片传送至腔室内部，然后通入惰性气体，将射频电源连接至法拉第射频匹配器，对法拉第层通电进行电容耦合等离子体清洗。
在本发明中，所述清洗片采用裸硅片镀上SiO，置于电极表面，用来保护ESC，同时防止清洗掉的物质污染ESC表面。
在本发明中，所述惰性气体优选为He、Kr、Ne、Ar和Xe中的一种或几种，优选的，在通入惰性气体的时候一并通入一定比例的O 2，能进一步提高清洗效果。所述O 2的流量优选为1～200sccm，更优选为50～150sccm，最优选为80～120sccm；
所述电容耦合等离子体清洗的射频功率优选为500～2000W，更优选为1000～1500W，如500W、600W、700W、800W、900W、1000W、1100W、1200W、1300W、1400W、1500W、1600W、1700W、1800W、1900W、2000W，优选为以上述任意数值为上限或下限的范围值；
所述腔体压力优选为10～50mT，更优选为20～40mT，如10mT、15mT、20mT、25mT、30mT、35mT、40mT，优选为以上述任意数值为上限或下限的范围值；
所述总的气体流量优选为100～500sccm，更优选为200～400sccm，如100sccm，150sccm，200sccm，250sccm，300sccm，350sccm，400sccm，450sccm，500sccm，优选为以上述任意数值为上限或下限的范围值；
所述电容耦合等离子体清洗的时间优选为2～5min，更优选为3～4min，如2min、3min、4min、5min，优选为以上述任意数值为上限或下限的范围值。在本发明中，清洗时间与刻蚀时间相关，所述刻蚀时间长、刻蚀量多，产生的沾污也随之增多，对应的清洗时间也需延长。
完成电容耦合等离子体清洗之后，本发明在刻蚀腔内通入化学清洗气体，将射频电源连接至内外线圈匹配器，法拉第匹配器不通电，进行电感耦合等离子体清洗。
在本发明中，所述化学清洗气体包括CH 2F 2、CF 4、NF 3、SF 6、O 2中的一种或几种，优选的，在进行所述电感耦合等离子体清洗时，还可通入一定比例的惰性气体，所述惰性气体的流量优选为50～300sccm，更优选为100～250sccm， 最优选为150～200sccm。在进行ICP化学清洗时通入惰性气体启辉，然后再通入化学清洗气体。
所述电感耦合等离子体清洗的射频功率优选为500～2000W，更优选为1000～1500W，如500W、600W、700W、800W、900W、1000W、1100W、1200W、1300W、1400W、1500W、1600W、1700W、1800W、1900W、2000W，优选为以上述任意数值为上限或下限的范围值；
所述腔体压力优选为10～50mT，更优选为20～40mT，如10mT、15mT、20mT、25mT、30mT、35mT、40mT，优选为以上述任意数值为上限或下限的范围值；
所述总的气体流量优选为100～500sccm，更优选为200～400sccm，如100sccm，150sccm，200sccm，250sccm，300sccm，350sccm，400sccm，450sccm，500sccm，优选为以上述任意数值为上限或下限的范围值；
所述电容耦合等离子体清洗的时间优选为2～5min，更优选为3～4min，如2min、3min、4min、5min，优选为以上述任意数值为上限或下限的范围值。在本发明中，清洗时间与刻蚀时间相关，所述刻蚀时间长、刻蚀量多，产生的沾污也随之增多，对应的清洗时间也需延长。
本发明提供一种等离子刻蚀腔的清洗方法，包括以下步骤：A)将清洗片置于完成样品加工后的等离子刻蚀腔内，通入惰性气体，进行电容耦合等离子体清洗；B)然后通入化学清洗气体，进行电感耦合等离子体清洗；所述化学清洗气体包括CH 2F 2、CF 4、NF 3、SF 6、O 2中的一种或几种。本发明在等离子刻蚀腔中先进行CCP法拉第物理清洗，然后在进行ICP化学清洗，不仅能够对等离子刻蚀腔的腔壁和窗口都有较好的清洗效果，而且，本发明通过不同的气体组合，提升了对多种金属沾污的清洗能力。
为了进一步说明本发明，以下结合实施例对本发明提供的一种等离子刻蚀腔的清洗方法及应用进行详细描述，但不能将其理解为对本发明保护范围的限定。
以下所述实施例均对应刻蚀量为50nm左右Metal(TiN、Ta、Mg、Ru和Cu等)与50nm左右SiO所产生的混合沾污。
实施例1：
待样品加工完成后，腔室存在金属与SiO混合沾污；
传送清洗片至腔室；
通入Kr(20％)、Ar(70％)、O2(10％)的组合气体，放电启辉(CCP模式)
启辉完成后，功率提高至2000W，腔压控制为20mT；
清洗3min；
通入NF 3(80％)、He(20％)的组合气体，放电启辉(ICP模式)
启辉完成后，功率提高至2000W，腔压控制为40mT；
清洗3min；
收集颗粒数据：0.07μm与0.12μm颗粒数量均在20左右，清洗效果较好。
实施例2：
待样品加工完成后，腔室存在金属与SiO混合沾污；
传送清洗片至腔室；
通入Xe(20％)、Ar(80％)的组合气体，放电启辉(CCP模式)
启辉完成后，功率提高至2000W，腔压控制为20mT；
清洗3min；
通入SF6(70％)、O2(20％)、He(10％)的组合气体，放电启辉(ICP模式)
启辉完成后，功率提高至2000W，腔压控制为40mT；
清洗3min；
收集颗粒数据：0.07μm与0.12μm颗粒数量均在20左右，清洗效果较好。
对比例1
待样品加工完成后，腔室存在金属与SiO混合沾污；
传送清洗片至腔室；
通入Xe(20％)、Ar(80％)的组合气体，放电启辉(CCP模式)；
提高功率，调整腔压；
清洗3min；
对比例1中的CCP工艺与实施例2中的CCP工艺相同。
收集颗粒数据：0.07μm与0.12μm颗粒数量均大于100，清洗效果较差。
对比例2
待样品加工完成后，腔室存在金属与SiO混合沾污；
传送清洗片至腔室；
通入SF6(70％)、O2(20％)、He(10％)的组合气体，放电启辉(ICP模式)；
提高功率，调整腔压；
清洗3min；
对比例2中的ICP工艺与实施例2中的ICP工艺相同。
收集颗粒数据：0.07μm与0.12μm颗粒数量均在40-50，清洗效果一般。
对比例3
待样品加工完成后，腔室存在金属与SiO混合沾污；
传送清洗片至腔室；
通入Kr(20％)、Ar(70％)、O2(10％)的组合气体，放电启辉(CCP模式)
提高功率，调整腔压；
清洗3min；
对比例3中的CCP工艺与实施例1中的CCP工艺相同。
收集颗粒数据：0.07μm与0.12μm颗粒数量均大于100，清洗效果较差。
对比例4
待样品加工完成后，腔室存在金属与SiO混合沾污；
传送清洗片至腔室；
通入NF 3(80％)、He(20％)的组合气体，放电启辉(ICP模式)
提高功率，调整腔压；
清洗3min；
对比例4中的ICP工艺与实施例1中的ICP工艺相同。
收集颗粒数据：0.07μm与0.12μm颗粒数量均在50左右，清洗效果一般。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通 技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

  1. 一种等离子刻蚀腔的清洗方法，包括以下步骤：
    A)将清洗片置于完成样品加工后的等离子刻蚀腔内，通入惰性气体，进行电容耦合等离子体清洗；
    B)然后通入化学清洗气体，进行电感耦合等离子体清洗；
    所述化学清洗气体包括CH 2F 2、BCl 3、CF 4、NF 3、SF 6、Cl 2、O 2中的一种或几种。
  2. 根据权利要求1所述的清洗方法，其特征在于，所述惰性气体包括He、Kr、Ne、Ar和Xe中的一种或几种。
  3. 根据权利要求1所述的清洗方法，其特征在于，所述电容耦合等离子体清洗时还通入1～200sccm的O 2。
  4. 根据权利要求3所述的清洗方法，其特征在于，所述电容耦合等离子体清洗的射频功率为500～2000W，腔体压力为10～50mT，总的气体流量为100～500sccm。
  5. 根据权利要求1所述的清洗方法，其特征在于，所述电感耦合等离子体清洗时还通入50～300sccm的惰性气体。
  6. 根据权利要求5所述的清洗方法，其特征在于，所述电感耦合等离子体清洗的射频功率为500～2000W，腔体压力为10～50mT，总的气体流量为100～500sccm。
  7. 根据权利要求1所述的清洗方法，其特征在于，所述等离子刻蚀腔内设置有与窗口平行的电极，所述窗口外部设置有法拉第屏蔽装置和射频线圈。
  8. 如权利要求1所述的清洗方法在清洗等离子刻蚀腔内金属和SiO混合沾污时的应用。
  9. 根据权利要求8所述的应用，其特征在于，所述金属和SiO混合沾污位于窗口和腔壁处。
  10. 根据权利要求8所述的应用，其特征在于，所述金属为Ru、Ta、TiN、Cu、Ag、Al、Pt和Mg中的一种或几种。
PCT/CN2022/118025 2021-09-17 2022-09-09 一种等离子刻蚀腔的清洗方法及应用 WO2023040757A1 (zh)

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