WO2023017607A1 - 光変調器および光送信器 - Google Patents

光変調器および光送信器 Download PDF

Info

Publication number
WO2023017607A1
WO2023017607A1 PCT/JP2021/029775 JP2021029775W WO2023017607A1 WO 2023017607 A1 WO2023017607 A1 WO 2023017607A1 JP 2021029775 W JP2021029775 W JP 2021029775W WO 2023017607 A1 WO2023017607 A1 WO 2023017607A1
Authority
WO
WIPO (PCT)
Prior art keywords
selective etching
layer
waveguide core
waveguide
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/029775
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
明晨 陳
隆彦 進藤
慈 金澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to US18/682,391 priority Critical patent/US20240353696A1/en
Priority to JP2023541191A priority patent/JP7680690B2/ja
Priority to PCT/JP2021/029775 priority patent/WO2023017607A1/ja
Publication of WO2023017607A1 publication Critical patent/WO2023017607A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/06—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
    • G02F2201/063—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide ridge; rib; strip loaded
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/101—Ga×As and alloy
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/102—In×P and alloy
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/108—Materials and properties semiconductor quantum wells

Definitions

  • the present invention relates to an optical modulator and an optical transmitter, and more particularly to an optical transmitter used in the field of optical communication in which a light source and an optical modulator are monolithically integrated.
  • Non-Patent Document 1 proposes a method of expanding the band by replacing the semiconductor cladding of the EML modulator section with a polymer material having a lower dielectric constant.
  • the EML is a monolithic integrated device in which different waveguide structures are joined, and even if the core material is the same, the clad material is different.
  • the propagation characteristics of the eigenmode in each waveguide are different, optical loss occurs due to light reflection and scattering at the junction, leading to a decrease in the output power of the optical transmitter. was there.
  • An object of the present invention is to provide an EA modulator having a structure with an increased optical confinement factor, and a high-output optical transmitter having a structure that reduces junction loss in optical connections between heterogeneous waveguides made of different clad materials. is to provide
  • the present invention provides an optical modulator having a high mesa structure made of InP-based material, comprising: a waveguide core having a multiple quantum well structure; a lower selective etching layer inserted into the lower clad at a distance from the waveguide core; and an upper selective etching layer inserted into the upper clad at a distance from the waveguide core, wherein the lower selective etching layer and The upper selective etching layer is narrower than the mesa width of the high mesa structure.
  • one embodiment of the optical transmitter comprises a buried semiconductor laser buried with insulating InP, an optical modulator having a high mesa structure made of InP-based material, a waveguide core of the semiconductor laser, and the optical modulator.
  • an optical transmitter monolithically integrated with a connection region for connecting a waveguide core of a semiconductor laser, wherein the connection region comprises a bulk waveguide made of an InGaAsP-based material, and is a connection portion with the waveguide core of the semiconductor laser.
  • the semiconductor-embedded taper portion is embedded with the insulating InP at the connection end surface with the waveguide core of the semiconductor laser, and is connected with the waveguide core of the optical modulator
  • the end faces are embedded in the embedded layer that embeds the waveguide core of the optical modulator, and the tapered embedded interface is characterized by forming an angle of 45 degrees with respect to the optical axis direction of the bulk waveguide.
  • FIG. 1 is a diagram showing the configuration of an optical transmitter according to a first embodiment of the present invention
  • 2A and 2B are diagrams showing a method for manufacturing the optical transmitter of Example 1
  • FIG. 3 is a diagram showing the mesa width dependence of the optical confinement factor in the EA modulator
  • 4 is a diagram showing the dependence of the optical confinement factor on the distance between the waveguide core and the selective etching layer in the EA modulator of Example 1
  • FIG. 5 is a diagram showing the configuration of an optical transmitter according to a second embodiment of the present invention
  • 6 is a diagram showing a semiconductor embedded tapered portion of a connection region in the EA modulator of Example 1
  • FIG. 7 is a diagram showing the configuration of an optical transmitter according to a third embodiment of the present invention
  • FIG. 8 is a diagram showing the dependence of the optical coupling coefficient on the distance between the waveguide core and the selective etching layer in the EA modulator of Example 3.
  • FIG. 3 is a diagram showing the mesa width dependence of
  • EML in which a distributed feedback (DFB) semiconductor laser and an EA modulator are integrally integrated will be described as an example. It can also be applied to an optical transmitter using a light source such as a light source, or using an optical modulator of another type.
  • DFB distributed feedback
  • FIG. 1 shows the configuration of an optical transmitter according to Example 1 of the present invention.
  • FIG. 1(a) is a cross-sectional view of the waveguide core in the optical axis (Z-axis) direction
  • FIG. 1(b) is a cross-sectional view (XY plane) perpendicular to the optical axis in the EA modulator.
  • waveguide cores 112, 122, 132 and a p-InP clad 102 serving as an upper clad are laminated on an n-InP substrate 101 which also serves as a lower clad.
  • the optical transmitter 100 has a configuration in which a DFB laser 110 and an EA modulator 130 are connected by a connection region 120 .
  • a common bottom electrode 103 is formed on the bottom surface of the n-InP substrate 101 , an LD electrode 111 is formed on the top surface of the DFB laser 110 , and an EA electrode 131 is formed on the top surface of the EA modulator 130 .
  • the DFB laser 110 is a buried semiconductor laser embedded with insulating InP doped with impurities such as Fe.
  • the configuration of the EA modulator 130 having a high mesa structure made of InP-based material will be described in detail with reference to FIG. 1(b).
  • the waveguide core 132 has, for example, a multi-quantum well structure (MQW) made of InGaAsP-based material.
  • MQW multi-quantum well structure
  • a portion of the lower clad 101, the waveguide core 132 and the upper clad 102 are processed into a high mesa structure, and both sides of the mesa are embedded with a low refractive index polymer material such as benzocyclobutene (BCB). It is buried by layers 104a and 104b.
  • MQW multi-quantum well structure
  • BCB benzocyclobutene
  • the buried layers 104a and 104b contribute to improving the optical confinement factor and reducing the capacitance of the electrode pads of the EA modulator. It should be noted that the mesa may be protected by passivation film treatment of SiO 2 , SiN, or the like, without embedding the high mesa structure with a polymer or semiconductor material. In that case, the buried layers 104a and 104b in FIG. 1(b) can be regarded as air.
  • a lower selective etching layer 135 a is inserted into the lower clad 101 of the waveguide core 132 with a gap from the waveguide core 132 .
  • the lower selective etching layer 135a is made of a composition having a different etching rate from the waveguide core semiconductor material such as InP, for example, InP, InGaAsP, or InGaAlAs.
  • an upper selective etching layer 135b is inserted in the upper clad with a gap from the waveguide core 132.
  • the width of the selective etching layers 135a and 135b that is, the width in the X-axis direction is processed so as to be narrower than the width of the mesa.
  • Such a structure can reduce the effective refractive index of the cladding region and improve the optical confinement factor in the Y-axis direction.
  • FIG. 2 shows an outline of a manufacturing method of the EA modulator 130 of the optical transmitter of the first embodiment.
  • a selective etching layer 135a, a lower clad layer 133, a waveguide core 132, an upper clad layer 134, a selective etching layer 135b, and an upper clad 102 are sequentially laminated by epitaxial growth such as MOCVD (FIG. 2 ( a)).
  • the material of the waveguide core 132 is preferably an InGaAsP material having a bandgap corresponding to a wavelength of 1.3-1.6 ⁇ m for applications in the field of optical communications.
  • each layer is removed down to a part of the n-InP substrate 101 to form a high mesa structure having a desired width in the X-axis direction (FIG. 2(b)).
  • dry etching using an RIE (Reactive Ion Etching) device or an ICP (Inductively Coupled Plasma) device is used.
  • the selective etching layers 135a and 135b made of InGaAlAs are selectively etched by wet etching using an etchant such as citric acid peroxide (FIG. 2(c)).
  • a polymer material such as BCB is buried on both sides of the high mesa structure to form buried layers 104a and 104b, forming a lower surface electrode 103 and an EA electrode 131 (FIG. 2(d)).
  • each layer is 240 nm for the waveguide core 132, 450 nm for the selective etching layers 135a and 135b, and 200 nm for the lower clad layer 133 and the upper clad layer .
  • the side etching amount in the etching shown in FIG. 2(c) is controlled within the range of 200 to 300 nm. If the amount of side etching is too large, the width of the waveguide in the selective etching layer in the X direction becomes narrow, resulting in an increase in electrical resistance and a decrease in heat conduction efficiency.
  • the width of the selective etching layers 135a and 135b is preferably within the range of 30% to 50% of the mesa width.
  • Fig. 3 shows the dependence of the optical confinement factor on the mesa width in the EA modulator.
  • the case of a conventionally structured EA modulator without a selective etching layer is shown.
  • the narrower the mesa width of the high mesa structure the better the optical confinement coefficient.
  • the mesa width is set to about 1.2 ⁇ m.
  • the optical confinement factor is approximately 0.241.
  • FIG. 4 shows the dependence of the optical confinement factor on the distance between the waveguide core and the selective etching layer in the EA modulator of Example 1.
  • the mesa width of the high mesa structure is 1.2 ⁇ m
  • the distance between the waveguide core and the lower and upper selective etching layers that is, the thickness of the lower clad layer 133 and the upper clad layer 134 varies depending on the thickness. It represents the optical confinement factor.
  • the three graphs represent cases of different side etching amounts. When the side etching amount is 300 nm and the distance between the waveguide core and the selective etching layer is 0.2 ⁇ m, the optical confinement factor is 0.28.
  • the optical confinement factor can be improved by 13% compared to the EA modulator with the conventional structure. It can be seen that when the side etching amount is 100 nm, it is difficult to improve the optical confinement coefficient regardless of the distance between the waveguide core and the selective etching layer.
  • the distance between the waveguide core and the selective etching layer that is, the thickness of the lower clad layer 133 and the upper clad layer 134 as thin as possible. Since the mode field diameter of the propagation mode in the conventional structure is about 0.6 ⁇ m (FWHM), if the diameter is 1 ⁇ m or more, the selective etching layer and the propagation mode hardly overlap, so that the effect of improving the optical confinement factor cannot be obtained. It is desirable that the selective etching layer be as close to the core as possible, but in epitaxial growth, it is necessary to switch the growth gas between layers with different compositions, so an InP layer of about 10 nm is inserted. Therefore, it is desirable that the distance between the waveguide core and the selective etching layer is in the range of 0.01 to 1 ⁇ m.
  • the thickness of the selective etching layers 135a and 135b is found to increase the optical confinement factor by 5% or more in the range of 0.2 to 1 ⁇ m, and it is desirable to keep the thickness within this range.
  • FIG. 5 shows the configuration of an optical transmitter according to Example 2 of the present invention.
  • FIG. 5(a) is a cross-sectional view of the high mesa structure in the direction of the optical axis (Z-axis), and
  • FIG. 5(b) is a perspective view as seen from above.
  • the optical transmitter 200 has a configuration in which a DFB laser 210 and an EA modulator 230 are connected by a connection region 220 .
  • waveguide cores 212, 222, 232 and a p-InP clad 202 serving as an upper clad are laminated on an n-InP substrate 201 which also serves as a lower clad.
  • a common bottom electrode 203 is formed on the bottom surface of the n-InP substrate 201 , an LD electrode 211 is formed on the top surface of the DFB laser 210 , and an EA electrode 231 is formed on the top surface of the EA modulator 230 .
  • the EA modulator 230 of the optical transmitter 200 has a high mesa structure as in the first embodiment, and is embedded with embedded layers 204a and 204b.
  • the waveguide core 222 in the connection region 220 is a bulk waveguide made of InGaAsP material.
  • DFB laser 210, connection region 220 and EA modulator 230 have different layer structures and are fabricated by epitaxial growth three times.
  • the connection of each region is waveguide-connected by a technique called butt joint.
  • the connection region 220 includes a semiconductor-embedded taper portion 223 that is a connection portion with the DFB laser 210, a straight portion 225 that is a connection portion with the EA modulator 230, and a passive taper portion 224 that connects them.
  • the passive tapered portion is omitted if the waveguide cores to be connected have the same width.
  • the connection region 220 connects the waveguide 212 of the DFB laser 210 and the waveguide 232 of the EA modulator 230 with low loss.
  • FIG. 6 shows the semiconductor-embedded taper portion of the connection region in the EA modulator of Example 1.
  • FIG. 6A is a top view of the semiconductor embedded tapered portion 223 of the connection region 220.
  • FIG. FIG. 6(b) is a cross-sectional view of the connection end surface with the DFB laser 210.
  • FIG. The width of the mesa of the DFB laser 210, ie the width of the waveguide core 212, is 2.5 ⁇ m.
  • FIG. 6(d) is a cross-sectional view of the connection end face with the passive tapered portion 224.
  • FIG. FIG. 6(c) is an intermediate cross-sectional view of the connection between the two.
  • the waveguide core 222 is embedded with InP claddings 213a and 213b embedding the waveguide core 212 of the DFB laser 210 in the vicinity of the connection end face with the DFB laser 210.
  • the waveguide core 222 is embedded in the embedded layers 204a and 204b in which the waveguide core 232 of the EA modulator 230 is embedded near the connection end face with the passive tapered portion 224.
  • the tapered embedded interface is processed to form an angle of 45 degrees with respect to the optical axis direction of the waveguide core.
  • the coupling efficiency between the waveguide 212 of the DFB laser 210 and the waveguide core 222 in the connection region 220 is 0.955.
  • the coupling efficiency can be increased to 0.999 in the connection region 220 having the semiconductor-embedded taper portion 223 of the second embodiment.
  • the width of the mesa of the EA modulator 230 that is, the width of the waveguide core 232 is 1.2 ⁇ m. Therefore, the passive tapered portion 224 is provided between the straight portion 225 connected to the waveguide core 232 and the semiconductor embedded tapered portion 223 .
  • the length of the passive taper portion 224 is set to be twice that of the semiconductor-embedded taper portion 223 and is 40 ⁇ m.
  • the straight portion 225 has a length of 20 ⁇ m.
  • the element length of the DFB laser 210 is 300 ⁇ m, and the element length of the EA modulator 230 is 75 ⁇ m. With such a structure of connection region 220, the coupling efficiency between waveguide 212 of DFB laser 210 and waveguide 232 of EA modulator 230 is 0.96.
  • FIG. 7 shows the configuration of an optical transmitter according to Example 3 of the present invention.
  • FIG. 7(a) is a perspective view seen from above
  • FIG. 7(b) is a cross-sectional view (XY plane) perpendicular to the optical axis of the waveguide core in the connection region.
  • the optical transmitter 300 has a configuration in which a DFB laser 310 and an EA modulator 330 are connected by a connection region 320 .
  • a waveguide core 322 and a p-InP clad 302 serving as an upper clad are laminated on an n-InP substrate 301 also serving as a lower clad.
  • connection region 220 has a bulk waveguide made of an InGaAsP-based material as a waveguide core 322, and includes a semiconductor embedded taper portion 323, a passive taper portion 324 and a straight portion 325 as in the second embodiment.
  • the passive tapered portion 324 and straight portion 325 of the connection region 320 are also provided with selective etching layers similar to those of the EA modulator 330 to further improve the optical coupling efficiency between the elements. Since the connection region 320 and the EA modulator 330 are produced by separate epitaxial growths, different layer structures can be introduced. The difference between the selective etching layer of the connection region 320 and the selective etching layer of the EA modulator 330 is that in the connection region 320, the mesa penetrates in the X-axis direction and the buried layer 304a such as BCB, which is a polymer material with a low refractive index, is formed. , 304b. That is, it can be said that the selective etching layer made of the InGaAlAs material of the EA modulator 330 is replaced with the selective etching layer made of the polymer material.
  • a selective etching layer is laminated also in the connection region 320 .
  • etching is performed in two steps before the step of embedding with the embedding layers 304a and 304b.
  • the sides of the mesa of the EA modulator 330 are covered with a photomask to protect it from side etching. That is, only the selective etching layer of the connection region 320 is etched.
  • a second wet etching process removes the protective mask and etches the selective etching layer of both the connection region 320 and the EA modulator 330 . In this manner, the selective etching layer is removed in the connection region 320 except the semiconductor embedded taper portion 323 to penetrate the mesa, and the selective etching layer with a desired width is left in the EA modulator 330 .
  • FIG. 8 shows the dependence of the optical coupling coefficient on the distance between the waveguide core and the selective etching layer in the EA modulator of Example 3.
  • the optical coupling coefficient varies depending on the distance between the waveguide core and the selective etching layer, that is, the thickness of the lower clad layer 427 and the upper clad layer 428 .
  • the maximum optical coupling coefficient between waveguide 312 of DFB laser 310 and waveguide 332 of EA modulator 330 is 0.988. Therefore, according to the configuration of the connection region 320 of Example 3, the coupling efficiency between the DFB laser 310 and the EA modulator 330 can be enhanced.
  • the EA modulator can be shortened and the bandwidth can be broadened due to the structure in which the optical confinement factor of the EA modulator is increased.
  • the semiconductor laser and the EA modulator can be connected. Coupling efficiency can be increased. As a result, it is possible to reduce junction loss in optical connection between waveguides of different types, and realize an optical transmitter capable of high-speed operation and high output.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
PCT/JP2021/029775 2021-08-12 2021-08-12 光変調器および光送信器 Ceased WO2023017607A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US18/682,391 US20240353696A1 (en) 2021-08-12 2021-08-12 Optical Modulator and Optical Transmitter
JP2023541191A JP7680690B2 (ja) 2021-08-12 2021-08-12 光変調器および光送信器
PCT/JP2021/029775 WO2023017607A1 (ja) 2021-08-12 2021-08-12 光変調器および光送信器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/029775 WO2023017607A1 (ja) 2021-08-12 2021-08-12 光変調器および光送信器

Publications (1)

Publication Number Publication Date
WO2023017607A1 true WO2023017607A1 (ja) 2023-02-16

Family

ID=85200054

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2021/029775 Ceased WO2023017607A1 (ja) 2021-08-12 2021-08-12 光変調器および光送信器

Country Status (3)

Country Link
US (1) US20240353696A1 (https=)
JP (1) JP7680690B2 (https=)
WO (1) WO2023017607A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7560005B1 (ja) * 2024-04-09 2024-10-02 三菱電機株式会社 光半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49106784A (https=) * 1973-02-12 1974-10-09
JP2011258810A (ja) * 2010-06-10 2011-12-22 Mitsubishi Electric Corp 半導体光集積素子及びその製造方法
US20180081118A1 (en) * 2014-07-14 2018-03-22 Biond Photonics Inc. Photonic integration by flip-chip bonding and spot-size conversion
JP2018139264A (ja) * 2017-02-24 2018-09-06 Ｎｔｔエレクトロニクス株式会社 光半導体素子及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49106784A (https=) * 1973-02-12 1974-10-09
JP2011258810A (ja) * 2010-06-10 2011-12-22 Mitsubishi Electric Corp 半導体光集積素子及びその製造方法
US20180081118A1 (en) * 2014-07-14 2018-03-22 Biond Photonics Inc. Photonic integration by flip-chip bonding and spot-size conversion
JP2018139264A (ja) * 2017-02-24 2018-09-06 Ｎｔｔエレクトロニクス株式会社 光半導体素子及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7560005B1 (ja) * 2024-04-09 2024-10-02 三菱電機株式会社 光半導体装置

Also Published As

Publication number Publication date
JP7680690B2 (ja) 2025-05-21
US20240353696A1 (en) 2024-10-24
JPWO2023017607A1 (https=) 2023-02-16

Similar Documents

Publication Publication Date Title
KR102241137B1 (ko) 반도체 광 소자
JP5897414B2 (ja) 光デバイスの製造方法
US9423565B2 (en) Coupled waveguide apparatus and structures therefor
JP4505470B2 (ja) 光導波路デバイス及び半導体デバイス
EP0816908A2 (en) Coupling of strongly and weakly guiding waveguides for compact integrated Mach Zehnder modulators
CN111817131B (zh) 半导体集成光学器件以及制造半导体集成光学器件的方法
JP3244115B2 (ja) 半導体レーザー
US6813068B2 (en) Semiconductor optical amplifier and semiconductor laser
WO2016056498A1 (ja) 半導体光集積素子およびその製造方法
JP7680690B2 (ja) 光変調器および光送信器
JPWO2006016453A1 (ja) 半導体レーザ、半導体光アンプ、及び光通信装置
JP2011258785A (ja) 光導波路およびそれを用いた光半導体装置
JP2016189437A (ja) 半導体レーザ素子
JP7244784B2 (ja) 半導体光源素子および光半導体導波路窓構造の製造方法
JP2950302B2 (ja) 半導体レーザ
JPH07168146A (ja) スポット変換光導波路
US12541056B2 (en) Mode field adapter for optical coupling of waveguides
WO2025013161A1 (ja) 半導体光集積素子、半導体光集積素子の製造方法、半導体光装置および半導体光装置の制御方法
US10725241B2 (en) Asymmetrical spot-size converter and method of manufacturing spot-size converter
JPH04283704A (ja) 半導体光導波路
WO2023233525A1 (ja) 光送信器
JP2002057405A (ja) 半導体レーザ装置及びその製造方法
CN112072461A (zh) 电吸收调制激光器及其制作方法
US12259561B2 (en) Spot-size converter
JP2001135887A (ja) 光半導体装置及び光伝送システム

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21953502

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2023541191

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 18682391

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21953502

Country of ref document: EP

Kind code of ref document: A1