WO2023016453A1

WO2023016453A1 - Infrared detection chip and infrared detector

Info

Publication number: WO2023016453A1
Application number: PCT/CN2022/111150
Authority: WO
Inventors: 王敏; 金瑛
Original assignee: 南方科技大学
Priority date: 2021-08-09
Filing date: 2022-08-09
Publication date: 2023-02-16
Also published as: CN114136453A

Abstract

An infrared detection chip (100) and an infrared detector. The infrared detection chip (100) comprises an optical component (10), an infrared detection array (20), and a photoelectric readout module (30). The infrared detection array (20) comprises a plurality of infrared detection units (21) arranged in an array. The infrared detection units (21) can emit visible light under the effect of excitation light and can also have their temperature changed under the effect of infrared radiation to change the intensity of the visible light. The intensity of the visible light is negatively correlated with the temperature of the infrared detection units (21), and the temperature of the infrared detection units (21) is positively correlated with the intensity of the received infrared radiation. Photoelectric readout units (31) of the photoelectric readout module (30) have one-to-one correspondence to the infrared detection units (21), and the photoelectric readout units (31) are configured to detect the intensity of the visible light emitted by the infrared detection units (21) and convert same into an electrical signal.

Description

Infrared detection chip and infrared detector

technical field

The invention relates to the technical field of infrared detection, in particular to an infrared detection chip and an infrared detector.

Background technique

At present, uncooled infrared focal plane array technology has been widely used in related fields: in the military, it has become one of the main forces to defend national security; in civilian use, it has been widely used in industry, medical treatment, fire protection and Under video surveillance.

In recent years, several new optical readout uncooled infrared imaging technologies have been developed successively, mainly including dual-material micro-cantilever beam detection technology, Fabry-Perot microcavity infrared detection technology, pyroelectric-optic uncooled infrared detection technology, etc. But they still have some technical problems unresolved. For example, the inherent mechanical noise of the dual-material micro-cantilever detector is not easy to remove, which limits its industrial application; the residual stress and surface roughness of the movable micromirror of the Fabry-Perot microcavity infrared detector Control could be improved. Pyro-optic uncooled infrared detectors require crystal thin films with high electro-optic properties, and the preparation and performance optimization of materials are very difficult. Therefore, it is very necessary to continue to improve the existing technology or research and develop new optical readout infrared thermal imaging technology.

Contents of the invention

The invention provides an infrared detection chip and an infrared detector.

The infrared detection chip according to the embodiment of the present invention includes an optical component, an infrared detection array and a photoelectric readout module.

The infrared detection array is arranged under the optical component, and the infrared detection array includes a plurality of infrared detection units arranged in an array, and the infrared detection units can emit visible light under the action of excitation light, and the infrared detection units also Under the action of the infrared radiation converged by the optical components, temperature changes can occur so that the intensity of the visible light changes; the intensity of the visible light is negatively correlated with the temperature of the infrared detection unit, and the infrared detection unit The size of the temperature is positively correlated with the intensity of the infrared radiation received by the infrared detection unit; and

The photoelectric readout module is arranged under the infrared detection array, and the photoelectric readout module includes a plurality of photoelectric readout units arranged in an array, and the photoelectric readout units correspond to the infrared detection units one by one, so The photoelectric readout unit is used to detect the intensity of the visible light and convert it into an electrical signal.

In the infrared detection chip of the embodiment of the present invention, the infrared detection unit excited by the excitation light can emit visible light, and the infrared radiation will cause the temperature change of the infrared detection unit, thereby causing the intensity of the visible light emitted by the infrared detection unit to change. The stronger the intensity, the smaller the intensity of visible light. Therefore, when the infrared radiation is concentrated on the infrared detection unit, it will cause the change of the luminous intensity of visible light, and the photoelectric readout unit can convert the change of luminous intensity into an electrical signal. In this way, the distribution of infrared radiation can be converted into the light intensity distribution of visible light, and finally the infrared radiation intensity of different positions and regions can be obtained through the change of the electrical signal of the photoelectric readout unit to realize the infrared imaging of the heat source. In this way, it is only necessary to set the infrared detection unit in the infrared detection array to be excited by the excitation light to emit visible light and to be able to change the temperature of the emitted visible light under the action of infrared radiation to cause changes in the intensity of the emitted visible light to achieve infrared imaging. The structure and preparation process of the detection chip are relatively simple, the cost is low, and the sensitivity is high.

In some embodiments, the optical component includes a plurality of microlenses arranged in an array, and the microlenses are in one-to-one correspondence with the infrared detection units, and the infrared detection units are located on the focal plane of the microlenses, The microlens is used to focus the infrared radiation on the infrared detection unit.

In some embodiments, the infrared detection unit is made of fluorescent thermosensitive material.

In some embodiments, a vacuum cavity is formed in the infrared detection chip, and the infrared detection unit is located in the vacuum cavity.

In some embodiments, the infrared detection chip further includes a thermal insulation structure, and the thermal insulation structure is stacked and disposed below the infrared detection unit and between the infrared detection unit and the photoelectric readout unit.

In some embodiments, the infrared detector further includes a filter, and the filter is arranged between the infrared detection array and the photoelectric readout module and covers the photoelectric readout unit.

In some embodiments, the photoelectric readout module includes at least one of a CCD chip, a CMOS chip, and a CIS chip.

In some embodiments, the infrared detection chip further includes at least one light-shielding element, and each light-shielding element covers one infrared detection unit.

The infrared detector according to the embodiment of the present invention includes a casing and the infrared detection chip described in any of the above embodiments, and the infrared detection chip is arranged in the casing.

In the infrared detector according to the embodiment of the present invention, the infrared detection unit excited by the excitation light can emit visible light, and the infrared radiation will cause the temperature change of the infrared detection unit, thereby causing the intensity of the visible light emitted by the infrared detection unit to change. The stronger the intensity, the smaller the intensity of visible light. Therefore, when the infrared radiation is concentrated on the infrared detection unit, it will cause the change of the luminous intensity of visible light, and the photoelectric readout unit can convert the change of luminous intensity into an electrical signal. In this way, the distribution of infrared radiation can be converted into the intensity distribution of visible light. Finally, the intensity of infrared radiation at different positions and regions can be obtained through the change of the electrical signal of the photoelectric readout unit to realize infrared imaging of heat sources. In this way, it is only necessary to set the infrared detection unit in the infrared detection array to be excited by the excitation light to emit visible light and to be able to change the temperature of the emitted visible light under the action of infrared radiation to cause changes in the intensity of the emitted visible light to achieve infrared imaging. The structure and preparation process of the detection chip are relatively simple, the cost is low, and the sensitivity is high.

Additional aspects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.

Description of drawings

The above and/or additional aspects and advantages of the present application will become apparent and understandable from the description of the embodiments in conjunction with the following drawings, wherein:

Fig. 1 is a schematic structural view of an infrared detector according to an embodiment of the present invention;

Fig. 2 is another structural schematic diagram of an infrared detector according to an embodiment of the present invention;

Fig. 3 is another structural schematic diagram of the infrared detector according to the embodiment of the present invention.

Description of main component symbols:

Infrared detection chip 100, optical components 10, infrared detection array 20, infrared detection unit 21, photoelectric readout module 30, photoelectric readout unit 31, optical film 32, back-end processing part 40, vacuum chamber 50, bracket 60, heat insulation structure 70 , a filter 80 , and a shading element 90 .

Detailed ways

Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation indicated by rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc. The positional relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, Therefore, it should not be construed as limiting the invention.

In the description of the present invention, it should be noted that unless otherwise specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; it can be mechanically connected, or electrically connected, or can communicate with each other; it can be directly connected, or indirectly connected through an intermediary, and it can be the internal communication of two components or the interaction of two components relation. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention according to specific situations.

In the present invention, unless otherwise clearly specified and limited, a first feature being "on" or "under" a second feature may include direct contact between the first and second features, and may also include the first and second features Not in direct contact but through another characteristic contact between them. Moreover, "above", "above" and "above" the first feature on the second feature include that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is horizontally higher than the second feature. "Below", "beneath" and "under" the first feature to the second feature include that the first feature is directly below and obliquely below the second feature, or simply means that the first feature has a lower level than the second feature.

The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. Furthermore, the present disclosure may repeat reference numerals and/or reference letters in different instances, such repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and/or arrangements discussed. In addition, various specific process and material examples are provided herein, but one of ordinary skill in the art would recognize the use of other processes and/or the use of other materials.

Please refer to Fig. 1, the infrared detection chip 100 of the embodiment of the present invention includes an optical component 10, an infrared detection array 20 and a photoelectric readout module 30, the infrared detection array 20 is arranged under the optical component 10, and the infrared detection array 20 includes a plurality of array rows The infrared detection unit 21 of the cloth, the infrared detection unit 21 can emit visible light under the action of the excitation light, and the infrared detection unit 21 can also generate visible light under the action of the infrared radiation (the solid arrow in Fig. 1 ) converged by the optical component 10. The temperature changes so that the intensity of the visible light (dotted arrow in FIG. 1 ) emitted by the infrared detection unit 21 changes. The intensity of visible light emitted by the infrared detection unit 21 is negatively correlated with the temperature of the infrared detection unit 21 , and the temperature of the infrared detection unit 21 is positively correlated with the intensity of infrared radiation received by the infrared detection unit 21 . The photoelectric readout module 30 is arranged below the infrared detection array 20. The photoelectric readout module 30 includes a plurality of photoelectric readout units 31 arranged in an array. The photoelectric readout units 31 correspond to the infrared detection units 21 one by one. It is used to detect the intensity of the visible light emitted by the infrared detection unit 21 and convert it into an electrical signal.

It can be understood that at present, uncooled infrared focal plane array technology has been widely used in related fields: in the military, it has become one of the main forces to defend national security; in civilian use, it has been widely used in industrial, medical , fire protection and video surveillance. In other words, infrared detection chips have very broad market application prospects. With the advent of the 5G and AI era, new application fields will surely open a new peak in the development of infrared detection chips. At present, the research and development of infrared chips in my country has achieved staged success, and the independent development of high-performance and low-cost infrared detection chips has the potential for source innovation.

In recent years, several new optical readout uncooled infrared imaging technologies have been developed successively, mainly including dual-material micro-cantilever beam detection technology, Fabry-Perot microcavity infrared detection technology, pyroelectric-optic uncooled infrared detection technology, etc. But they still have some technical problems unresolved. For example, the inherent mechanical noise of the dual-material micro-cantilever detector is not easy to remove, which limits its industrial application; the residual stress and surface roughness of the movable micromirror of the Fabry-Perot microcavity infrared detector Control could be improved. Pyro-optic uncooled infrared detectors require crystal thin films with high electro-optic properties, and the preparation and performance optimization of materials are very difficult. Therefore, it still has important academic and practical application value to continue to improve the existing technology or research and develop new optical readout infrared thermal imaging technology to achieve low manufacturing cost and high sensitivity.

In the infrared detection chip 100 of the embodiment of the present invention, the infrared detection array 20 includes a plurality of infrared detection units 21 arranged in an array, the infrared detection units 21 can emit visible light under the action of excitation light, and the infrared detection units 21 can also pass through The temperature of the infrared radiation collected by the optical component 10 changes, so that the intensity of the visible light emitted by the infrared detection unit 21 changes. The intensity of visible light is negatively correlated with the temperature of the infrared detection unit 21, the temperature of the infrared detection unit 21 is positively correlated with the intensity of the infrared radiation received by the infrared detection unit 21, and the photoelectric readout unit 31 can read the intensity of visible light to convert into an electrical signal. In this way, the radiation of infrared radiation will cause the temperature of the infrared detection unit 21 to change, thereby causing the intensity of the visible light emitted by the infrared detection unit 21 to change. The stronger the intensity of the infrared radiation, the smaller the intensity of the visible light. Therefore, when the infrared radiation When it is converged on the infrared detection unit 21, it will cause changes in the luminous intensity of visible light, and the photoelectric readout unit 31 can convert the change of luminous intensity into changes in electrical signals, so that the distribution of infrared radiation can be converted into visible light. Finally, the intensity of the infrared radiation at different positions and regions can be obtained through the change of the electrical signal of the photoelectric readout unit 31 to realize the infrared imaging of the heat source. In this way, only the infrared detection unit in the infrared detection array 20 needs to be 21 is set so that it can be excited by the excitation light to emit visible light and can cause temperature changes under the action of infrared radiation to cause changes in the intensity of the emitted visible light to achieve infrared imaging. The structure and manufacturing process of the infrared detection chip 100 are relatively simple and cost-effective. lower, higher sensitivity.

Specifically, the excitation light can be white light, blue light, ultraviolet light or X-ray. At normal temperature, the infrared detection unit 21 can emit visible light under the excitation of the excitation light. Of course, the type of excitation light is not limited here, only the It only needs that the infrared detection unit can emit visible light under the action of excitation light. It can be understood that the wavelengths of excitation light and infrared radiation can be the same or different. In the embodiment of the present invention, the infrared detection chip 100 can be calibrated. In the initial situation, the infrared detection unit 21 is excited by the excitation light to emit a certain intensity of visible light, which is used as a calibration. During detection, the infrared radiation with temperature information generated by the heat source will converge on the infrared detection unit 21 through the optical component 10, causing the temperature of the infrared detection unit 21 to rise, thereby changing the intensity of visible light emitted by the infrared detection unit 21 , so that the electrical signal of the photoelectric readout unit 31 changes, and the temperature is positively correlated with the intensity of the infrared radiation received by each infrared detection unit 21 . Thus, the change of the intensity of visible light can be monitored through the change of the electrical signal to obtain the temperature rise of the infrared detection unit 21, and then the intensity of the infrared radiation can be obtained, so that the distribution of the infrared radiation can be detected and the thermal imaging of the heat source can be realized.

It can be understood that the infrared detection chip 100 in the embodiment of the present invention is a detection chip based on optical-optical-electrical conversion. Specifically, when receiving infrared radiation, the optical component 10 converges the infrared radiation to the infrared detection array 20. On the detection unit 21, the temperature of the infrared detection unit 21 changes under the action of infrared radiation, which causes the intensity of the visible light emitted by the infrared detection unit 21 to change, so that the distribution of infrared radiation can be converted into the light intensity distribution of visible light, that is, to achieve After the "light-to-light" conversion, then the photoelectric readout unit 31 of the photoelectric readout module 30 can detect the light intensity change of the corresponding infrared detection unit 21 to generate a change in the electrical signal, that is, realize the "opto-electrical "Conversion, thus, according to the change of the electrical signal, the thermal image of the infrared target under test can be calculated and obtained.

In the present invention, the photoelectric readout module 30 may include at least one of a CCD chip, a CMOS chip, and a CIS chip. In this way, the photoelectric readout module 30 can directly and accurately detect the luminous intensity of each infrared detection unit 21 to generate an image. The photoelectric readout unit 31 can be understood as a photosensitive unit, and the array composed of a plurality of photoelectric readout units 31 can be understood as a photosensitive array, and the photosensitive array can detect the intensity of visible light emitted by each infrared detection unit 21 to obtain the distribution of infrared radiation to generate an infrared image.

In some embodiments, the photoelectric readout module 30 may further include an optical film 32 , and the optical film 32 is stacked above the photoelectric readout unit 31 and covers the photoelectric readout unit 31 .

It can be understood that, in the embodiments of the present invention, infrared imaging can be realized by directly using the principle that the infrared detection unit 21 can change the intensity of the emitted visible light under the action of infrared radiation. Compared with the existing The above-mentioned infrared forming technologies in the technology are simple and the cost is low. At the same time, in the present invention, the infrared image is directly calculated through the distribution of light intensity, which can reduce the interference of useful signals such as environmental disturbances, and facilitate the realization of weak infrared images. detection perception.

In addition, it can also be understood that referring to FIG. 1 , in an embodiment of the invention, the infrared detection chip 100 also includes a back-end processing part 40, and the back-end processing part 40 can be located below the photoelectric readout module 30, that is, the bottom layer The back-end processing part 40 can properly process the electrical signal converted by the photoelectric readout unit 31 and then output it and perform subsequent processing to complete infrared imaging. Specifically, the back-end processing part 4031 can design the readout circuit of the infrared detector by combining the capacitive feedback transimpedance amplifier and the correlated double sampling circuit.

In some embodiments, the optical component 10 includes a plurality of microlenses arranged in an array (not shown), the microlenses correspond to the infrared detection units 21 one by one, the infrared detection unit 21 is located on the focal plane of the microlenses, and the microlenses The lens is used to focus the infrared radiation on the infrared detection unit 21 .

In this way, the infrared light radiation can be more accurately focused on the corresponding infrared detection unit 21 through an array composed of multiple microlenses, so as to excite the infrared detection unit 21 to emit visible light, and then accurately convert the distribution of infrared radiation into the distribution of light intensity .

Specifically, in such an embodiment, the microlenses can be silicon microlenses or PS microlenses, for example, chemical etching, photoresist hot melting, or ion beam etching can be used to etch silicon wafers and organic materials. A microlens array is formed. It can be understood that, in the embodiment of the present invention, the number of microlenses corresponds to the number of infrared detection units 21 and photoelectric readout units 31 , and the three correspond one-to-one.

In some embodiments, the infrared detection unit 21 can be made of fluorescent thermosensitive material

In this way, the fluorescent thermosensitive material excited by the excitation light can emit visible light, and when it absorbs the infrared radiation signal with the temperature information of the measured object, the temperature of the infrared detection unit 21 itself will change, so that the infrared detection unit 21 The intensity of the emitted visible light also changes, and then, the photoelectric readout module 30 can convert the change of the luminous intensity into a change of the electrical signal, and then perform subsequent processing by the back-end processing part 40 to generate an infrared image of the measured target.

Specifically, in such an embodiment, the infrared detection unit 21 may be a fluorescent heat-sensitive thin film made of a fluorescent heat-sensitive material, and the infrared detection array 20 may be manufactured using a MEMS process. The infrared detection unit 21 emits visible light when it receives the excitation light at normal temperature. When the infrared detection unit 21 receives infrared radiation, its temperature rises. Due to the thermal quenching effect of the fluorescent heat-sensitive material in the infrared detection unit 21, The luminous intensity of the infrared detection unit 21 at the position where the temperature rises will decrease, so that the intensity of visible light emitted by the infrared detection unit 21 at different positions and different regions of the infrared detection array 20 is different, and the photoelectric readout module 30 The readout unit 31 can convert the change of the luminous intensity into the change of the electrical signal, and output it after proper processing by the back-end processing part 40 to complete the infrared imaging.

It can be understood that for the infrared detection unit 21, the greater the intensity of the received infrared radiation, the higher the temperature, and the higher the temperature, the lower the luminous intensity. It can be seen that the measured heat source is transferred to the optical component 10 through the microlens. When the infrared rays of external radiation are focused on the surface of the infrared detection unit 21, the temperature of the infrared detection unit 21 will change. For example, the fluorescent heat-sensitive material in the infrared detection unit 21 excited by the excitation light emits visible light, and the received infrared radiation The higher the temperature, the lower the intensity of the visible light emitted by the infrared detection unit 21 with the higher temperature. In this way, it is only necessary to convert the change of the visible light intensity into the change of the electrical signal to get the result of each infrared detection unit 21. The size of the received infrared radiation enables thermal imaging of the measured heat source.

Please refer to FIG. 2 , in some embodiments, a vacuum cavity 50 is formed in the infrared detection chip 100 , and the infrared detection unit 21 is located in the vacuum cavity 50 .

In this way, placing the infrared detection unit 21 in a vacuum environment can minimize the influence of the external environment on the detection results.

Specifically, in such an embodiment, a vacuum cavity 50 may be formed in the infrared detection chip 100, and the infrared detection array 20 is disposed in the vacuum cavity 50. For example, in the embodiment shown in FIG. 2, the infrared detection chip 100 It can include a bracket 60, the optical component 10 can be arranged on the top of the bracket 60, the infrared detection array 20 and the photoelectric readout module 30 can be stacked and arranged under the bracket 60, the infrared detection array 20 is accommodated in the bracket 60, and the bracket 60 can be Vacuuming is performed to form a vacuum chamber 50 . In such an embodiment, the support 60 can be made of optical materials, and an element (not shown) for generating excitation light can be arranged on one side of the support 60, and the excitation light can be injected into the vacuum chamber 50 from the support 60 The internal illumination is on the infrared detection array 20 so that the infrared detection array 20 can emit visible light.

In addition, in some embodiments, the infrared detection array 20 may also be packaged in a vacuum package to form a vacuum chamber 50 inside, for example, the infrared detection array 20 may be vacuum packaged with a packaging film. It should be noted that, in such an embodiment, the installation position of the element generating the excitation light is not limited, and it is only required that the excitation light can be irradiated onto the infrared detection array 20 .

It can be understood that since the physical contact between the infrared detection unit 21 and the photoelectric readout unit 31 will provide a heat conduction path, part of the heat signal absorbed by the infrared detection unit 21 will be transmitted to the photoelectric readout unit 31, resulting in the loss of part of the infrared radiation signal . Therefore, referring to FIG. 2 , in some implementations, the infrared detection chip 100 further includes a thermal insulation structure 70 , and the thermal insulation structure 70 is stacked under the infrared detection unit 21 and located between the infrared detection unit 21 and the photoelectric readout unit 31 .

In this way, the thermal insulation structure 70 can be used to block the heat transfer between the infrared detection unit 21 and the photoelectric readout unit 31 as much as possible, thereby preventing the infrared detection unit 21 from causing more heat loss and causing the loss of part of the infrared radiation signal, and improving the detection efficiency. accuracy.

Specifically, in such an embodiment, the thermal insulation structure 70 can adopt a micro-bridge structure, which can isolate the heat transfer between the infrared detection unit 21 and the photoelectric readout unit 31 as much as possible without affecting the transmission of visible light. Improve detection accuracy.

Please continue to refer to FIG. 2 , in some embodiments, the infrared detection chip 100 further includes a filter 80 , the filter 80 is disposed between the infrared detection array 20 and the photoelectric readout module 30 and covers the photoelectric readout unit 31 .

In this way, the filter 80 can filter light to avoid affecting the accuracy of detection. For example, the filter 80 can be a bandpass filter, and the filter 80 can filter out light outside a specific wavelength range to ensure that the photoelectric readout unit 31 The accuracy of the intensity of the detected light. Specifically, in the embodiment shown in 2 , the filter 80 may be disposed between the heat insulating structure 70 and the photoelectric readout module 30 . Certainly, in other implementation manners, the filter 80 may also be disposed between the infrared detection array 20 and the heat insulating structure 70 , which is not specifically limited here.

Referring to FIG. 3 , in some implementations, the infrared detection chip 100 further includes at least one light-shielding element 90 , and each light-shielding element covers one infrared detection unit 21 .

In this way, the light shielding element 90 can be used to shield part of the infrared detection unit 21 so as to compensate for the heat generated by the photoelectric readout unit 31 during operation and the intensity of visible light emitted by the infrared detection unit 21 .

Specifically, the light-shielding element 90 can be a light-shielding film layer capable of shielding infrared light and visible light. In the embodiment shown in FIG. The lens is used to cover the infrared detection unit 21. Of course, it can be understood that in other embodiments, the shading element 90 can also be directly stacked on the infrared detection unit 21 to cover the infrared detection unit, which is not limited here.

In the present invention, each infrared detection unit 21 can be regarded as a pixel point (i.e., a picture element). As can be seen from the above, since the physical contact between the infrared detection unit 21 and the photoelectric readout unit 31 will provide a heat conduction path, therefore, The heat generated by the photoelectric readout unit 31 during operation can be transferred to the infrared detection unit 21 to cause the temperature of the infrared detection unit 21 to rise and affect the intensity of visible light, or the heat on the infrared detection unit 21 can be transferred to the photoelectric readout unit 31 Therefore, the noise of the photoelectric readout unit 31 is increased, which is likely to interfere with the detection results. In this embodiment, part of the infrared detection unit 21 is covered by the shading element 90, and the covered infrared detection unit 21 can be called a blind pixel. In this way, the infrared detection unit 21 corresponding to the shading element 90 (ie, the blind pixel ) is caused by the heat generated by components such as the photoelectric readout unit 21, so the temperature can be realized only by obtaining the luminous intensity of the blind pixel and the luminous intensity of other pixels Compensation, so as to obtain the accurate temperature rise of the infrared detection unit 21 to obtain the distribution of infrared radiation, for example, the temperature rise caused by the photoelectric readout module 30 can be calculated through blind pixels, and the photoelectric readout module 30 can be calculated by other pixels. Read out the temperature rise caused by both the module 30 and the infrared radiation. Therefore, the temperature rise caused by the infrared radiation can be obtained only by subtracting the former from the latter, and the infrared radiation can be accurately obtained according to the temperature rise of each position. distribution for thermal imaging.

Further, in order to improve the accuracy of compensation, in such an embodiment, the number of shading elements 90 is the same as the number of columns of the infrared detection array 20 , and each row of the infrared detection array 20 is provided with one shading element 90 . For example, the infrared detection array 20 is an N×M array composed of N rows and M columns. At this time, M blind pixels can be introduced to compensate the temperature, and each column or row uses a blind pixel. Perform temperature compensation to improve the accuracy of compensation.

In addition, it can also be understood that in the present invention, the thermal insulation structure 70 and the introduction of blind pixels can be used simultaneously to eliminate and compensate the influence of the heat generated inside the infrared detection chip 100 itself on the temperature of the infrared detection unit 21 , improving the detection accuracy and sensitivity.

The infrared detector in the embodiment of the present invention includes a casing and the infrared detection chip 100 described in any of the above embodiments, and the infrared detection chip 100 is installed in the casing.

In the infrared detector in the embodiment of the present invention, the infrared detection unit 21 excited by the excitation light emits visible light, and the infrared radiation will cause the temperature of the infrared detection unit 21 to change, thereby causing the intensity of the visible light emitted by the infrared detection unit 21 to change. The stronger the intensity of the infrared radiation, the smaller the intensity of the visible light. Therefore, when the infrared radiation is concentrated on the infrared detection unit 21, it will cause a change in the luminous intensity of the visible light, and the photoelectric readout unit 31 can convert the change of the luminous intensity In this way, the distribution of infrared radiation can be converted into the intensity distribution of visible light. Finally, the intensity of infrared radiation at different positions and regions can be obtained through the change of the electrical signal of the photoelectric readout unit 31 to realize Infrared imaging of heat sources, in this way, only the infrared detection unit 21 in the infrared detection array 20 needs to be set to be able to be excited by the excitation light to emit visible light, and the temperature change under the action of infrared radiation can cause the intensity of the emitted visible light to change Infrared imaging can be realized. The structure and manufacturing process of the infrared detection chip 100 are relatively simple, the cost is low, and the sensitivity is high.

In the description of this specification, descriptions referring to the terms "one embodiment", "certain embodiments", "exemplary embodiments", "example", "specific examples", or "some examples" are meant to be combined with Specific features, structures, materials, or characteristics described in the preceding embodiments or examples are included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the described specific features, structures, materials or characteristics may be combined in any suitable manner in any one or more embodiments or examples.

Although the embodiments of the present invention have been shown and described, those skilled in the art can understand that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principle and spirit of the present invention. The scope of the invention is defined by the claims and their equivalents.

Claims

An infrared detection chip is characterized in that, comprising:

optical components;

An infrared detection array arranged under the optical component, the infrared detection array includes a plurality of infrared detection units arranged in an array, the infrared detection units can emit visible light under the action of excitation light, and the infrared detection units can also Under the action of the infrared radiation converged by the optical components, the temperature changes so that the intensity of the visible light changes; the intensity of the visible light is negatively correlated with the temperature of the infrared detection unit, and the intensity of the infrared detection unit The temperature is positively correlated with the intensity of the infrared radiation received by the infrared detection unit; and

A photoelectric readout module arranged under the infrared detection array, the photoelectric readout module includes a plurality of photoelectric readout units arranged in an array, the photoelectric readout units correspond to the infrared detection units one by one, the The photoelectric readout unit is used to detect the intensity of the visible light and convert it into an electrical signal.
The infrared detection chip according to claim 1, wherein the optical component comprises a plurality of microlenses arranged in an array, and the microlenses are in one-to-one correspondence with the infrared detection unit, and the infrared detection unit is located at the On the focal plane of the microlens, the microlens is used to focus the infrared radiation on the infrared detection unit.
The infrared detection chip according to claim 1, wherein the infrared detection unit is made of fluorescent heat-sensitive material.
The infrared detection chip according to claim 1, wherein a vacuum cavity is formed in the infrared detection chip, and the infrared detection unit is located in the vacuum cavity.
The infrared detection chip according to claim 1, characterized in that, the infrared detection chip further comprises a thermal insulation structure, and the thermal insulation structure is stacked under the infrared detection unit and is located between the infrared detection unit and the photoelectric reader. between units.
The infrared detection chip according to claim 1, wherein the infrared detector further comprises a filter, the filter is arranged between the infrared detection array and the photoelectric readout module and covers the photoelectric readout module. Read unit.
The infrared detection chip according to claim 1, wherein the photoelectric readout module comprises at least one of a CCD chip, a CMOS chip, and a CIS chip.
The infrared detection chip according to claim 1, further comprising at least one light-shielding element, each of the light-shielding elements covers one of the infrared detection units.
An infrared detector, characterized in that, comprising:

shell; and

The infrared detection chip according to any one of claims 1-8, wherein the infrared detection chip is arranged in the housing.