WO2023013550A1 - Compound, resin composition, cured product and display device - Google Patents

Compound, resin composition, cured product and display device Download PDF

Info

Publication number
WO2023013550A1
WO2023013550A1 PCT/JP2022/029311 JP2022029311W WO2023013550A1 WO 2023013550 A1 WO2023013550 A1 WO 2023013550A1 JP 2022029311 W JP2022029311 W JP 2022029311W WO 2023013550 A1 WO2023013550 A1 WO 2023013550A1
Authority
WO
WIPO (PCT)
Prior art keywords
compound
resin composition
formula
carbon atoms
group
Prior art date
Application number
PCT/JP2022/029311
Other languages
French (fr)
Japanese (ja)
Inventor
西岡拓紀
小森悠佑
三好一登
Original Assignee
東レ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東レ株式会社 filed Critical 東レ株式会社
Priority to KR1020237039960A priority Critical patent/KR20240045164A/en
Priority to JP2022552774A priority patent/JPWO2023013550A1/ja
Publication of WO2023013550A1 publication Critical patent/WO2023013550A1/en

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B11/00Diaryl- or thriarylmethane dyes
    • C09B11/04Diaryl- or thriarylmethane dyes derived from triarylmethanes, i.e. central C-atom is substituted by amino, cyano, alkyl
    • C09B11/10Amino derivatives of triarylmethanes
    • C09B11/24Phthaleins containing amino groups ; Phthalanes; Fluoranes; Phthalides; Rhodamine dyes; Phthaleins having heterocyclic aryl rings; Lactone or lactame forms of triarylmethane dyes
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00Compounds containing amino groups bound to a carbon skeleton
    • C07C211/62Quaternary ammonium compounds
    • C07C211/63Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/16Nitrogen-containing compounds
    • C08K5/17Amines; Quaternary ammonium compounds
    • C08K5/18Amines; Quaternary ammonium compounds with aromatically bound amino groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/16Nitrogen-containing compounds
    • C08K5/17Amines; Quaternary ammonium compounds
    • C08K5/19Quaternary ammonium compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/16Nitrogen-containing compounds
    • C08K5/22Compounds containing nitrogen bound to another nitrogen atom
    • C08K5/27Compounds containing a nitrogen atom bound to two other nitrogen atoms, e.g. diazoamino-compounds
    • C08K5/28Azides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00Compositions of unspecified macromolecular compounds
    • C08L101/12Compositions of unspecified macromolecular compounds characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B11/00Diaryl- or thriarylmethane dyes
    • C09B11/04Diaryl- or thriarylmethane dyes derived from triarylmethanes, i.e. central C-atom is substituted by amino, cyano, alkyl
    • C09B11/10Amino derivatives of triarylmethanes
    • C09B11/12Amino derivatives of triarylmethanes without any OH group bound to an aryl nucleus
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B11/00Diaryl- or thriarylmethane dyes
    • C09B11/28Pyronines ; Xanthon, thioxanthon, selenoxanthan, telluroxanthon dyes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/0226Quinonediazides characterised by the non-macromolecular additives
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/105Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks

Definitions

  • the present invention relates to a compound, a resin composition, a cured product using the same, and a display device.
  • Cured products obtained by curing compositions containing polyimide and polybenzoxazole are widely used as insulating films, protective films, and planarizing films for semiconductor devices and display devices.
  • a display device for example, in applications such as organic electroluminescence (Electroluminescence: hereinafter referred to as EL) display pixel division layer and liquid crystal display black matrix, the cured product is used to improve contrast. It is required to lower the light transmittance.
  • EL organic electroluminescence
  • TFT driving thin film transistor
  • carbon black, organic / inorganic pigments, dyes, etc. are added to the resin composition, as seen in black matrix materials for liquid crystal displays and RGB paste materials. and a method of adding a coloring agent.
  • Techniques for reducing the light transmittance of a cured product in a resin composition include, for example, a method of adding a quinonediazide compound to an alkali-soluble resin, a dye soluble in both an alkaline developer and an organic solvent (see Patent Document 1), A method of adding a black oil-soluble dye to a photosensitive resin (see Patent Document 2), and adding at least one colorant selected from an esterified quinonediazide compound and a dye, an inorganic pigment, and an organic pigment to an alkali-soluble heat-resistant resin. (see Patent Document 3), and a method of adding a xanthene-based acid dye and a triarylmethane-based acid dye to a binder resin (see Patent Document 4).
  • the present invention has the following configurations. [1] A compound represented by formula (1).
  • a n- is an n-valent anion represented by formula (2) or formula (3).
  • R 1 to R 4 each independently represent an alkyl group having 5 to 10 carbon atoms) where n is an integer from 1 to 3.
  • R 5 to R 8 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms which may have a substituent.
  • R 9 to R 14 are , each independently represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 5 carbon atoms, and R 15 to R 18 each independently represent a hydrogen atom, a halogen atom, —SO 3 H, —SO 3 ⁇ , —SO 3 NR 19 R 20 , —COOH, —COO — , —COOR 21 , —CONR 22 R 23 , —OR 24 , —NR 25 R 26 or optionally substituted carbon atoms 1 to 20 R 19 to R 26 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms which may have a substituent.
  • R 5 At least one of R 8 and R 15 to R 18 is a monovalent hydrocarbon group having 1 to 10 carbon atoms having —SO 3 — or —COO
  • R 27 to R 30 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms which may have a substituent.
  • R 31 to R 36 are Each independently represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 5 carbon atoms
  • R 37 to R 41 each independently represent a hydrogen atom, a halogen atom, —SO 3 H, —SO 3 — , —SO 3 NR 42 R 43 , -COOH, -COO - , -COOR 44 , -CONR 45 R 46 , -OR 47 , -NR 48 R 49 or 1 having 1 to 20 carbon atoms which may have a substituent represents a valent hydrocarbon group, adjacent ones among R 37 to R 41 may be bonded to each other to form a cyclic structure, and R 42 to R 49 each independently represent a hydrogen atom or represents an optionally substituted monovalent hydrocarbon group having 1 to 20 carbon atoms, wherein at least two of R 27
  • the quinonediazide compound contains a compound in which sulfonic acid of quinonediazide is ester-bonded to the hydroxy groups of the polyhydroxy compound, and 100 mol% of the hydroxy groups are ester-bonded to the sulfonic acid of quinonediazide.
  • thermochromogenic compound contains an aromatic hydrocarbon compound having at least one aromatic C—H bond and at least three phenolic hydroxyl groups in one aromatic ring, and further has the formula ( The resin composition according to [12] or [13] above, which contains a triazine ring-containing compound represented by 4).
  • R 50 to R 55 are each independently a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkenyl ether group having 2 to 10 carbon atoms , a methylol group, and an alkoxymethyl group, provided that at least one of R 50 to R 55 is a methylol group or an alkoxymethyl group.
  • the (A) alkali-soluble resin contains one or more selected from the group consisting of polyimides, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, and copolymers thereof.
  • the resin composition according to any one of [14].
  • FIG. 1 is a schematic diagram of a substrate used in an organic EL display device
  • the compound of the present invention is a compound represented by formula (1).
  • the compound represented by formula (1) consists of an anion portion represented by A n- and a cation portion represented by (R 1 R 2 R 3 R 4 N + ) n .
  • a n- is an n-valent anion represented by formula (2) or formula (3).
  • R 5 to R 8 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms which may have a substituent.
  • R 9 to R 14 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 5 carbon atoms.
  • R 15 to R 18 each independently represent a hydrogen atom, a halogen atom, —SO 3 H, —SO 3 — , —SO 3 NR 19 R 20 , —COOH, —COO — , —COOR 21 , —CONR 22 R 23 , —OR 24 , —NR 25 R 26 or an optionally substituted monovalent hydrocarbon group having 1 to 20 carbon atoms;
  • R 19 to R 26 each independently represent a hydrogen atom or an optionally substituted monovalent hydrocarbon group having 1 to 20 carbon atoms.
  • the optionally substituted monovalent hydrocarbon group having 1 to 10 carbon atoms or the optionally substituted monovalent hydrocarbon group having 1 to 20 carbon atoms has Substituents that may be used include halogen atoms, hydroxyl groups, alkoxy groups, phenoxy groups, carboxyl groups, sulfo groups, acyl groups, amino groups, imino groups, amide groups, imido groups, nitro groups, cyano groups, —SO 3 — , Known substituents such as —COO — can be mentioned.
  • R 5 to R 8 and R 15 to R 18 is a monovalent hydrocarbon group having 1 to 10 carbon atoms having —SO 3 — or —COO — , —SO 3 - or -COO - .
  • X represents -SO 3 - or -COO - .
  • R 27 to R 30 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms which may have a substituent.
  • R 31 to R 36 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 5 carbon atoms.
  • R 37 to R 41 are each independently a hydrogen atom, a halogen atom, —SO 3 H, —SO 3 — , —SO 3 NR 42 R 43 , —COOH, —COO — , —COOR 44 , —CONR 45 R 46 , -OR 47 , -NR 48 R 49 or an optionally substituted monovalent hydrocarbon group having 1 to 20 carbon atoms; Adjacent ones among R 37 to R 41 may be bonded to each other to form a cyclic structure.
  • R 42 to R 49 each independently represent a hydrogen atom or an optionally substituted monovalent hydrocarbon group having 1 to 20 carbon atoms.
  • mutually adjacent ones refer to groups existing at the ortho position of a substituent when a given group is focused on.
  • R 38 R 37 or R 39 corresponds to R 38 and R 38 adjacent to each other.
  • examples of the substituents that the monovalent hydrocarbon group having 1 to 20 carbon atoms that may have a substituent may have include the substituents described above.
  • At least two of R 27 to R 30 and R 37 to R 41 are monovalent hydrocarbon groups having 1 to 20 carbon atoms having -SO 3 - or -COO- , -SO 3 - or -COO- be. By satisfying this, the structure represented by Formula (3) becomes an anion.
  • R 1 to R 4 in the cation moiety are each independently an alkyl group having 5 to 10 carbon atoms. That is, the cation moiety is a quaternary ammonium cation having four alkyl groups each having 5 to 10 carbon atoms, each of which may be different. In formula (1), all of R 1 , R 2 , R 3 and R 4 are preferably the same substituent. That is, the cation moiety is preferably a quaternary ammonium cation having four identical alkyl groups of 5 to 10 carbon atoms.
  • R 1 to R 4 are the same substituent, it is possible to improve the reliability of an organic EL display device having, as a pixel dividing layer, a cured product made of a resin composition containing the compound of the present invention, which will be described later. can.
  • ammonium cations having four alkyl groups having 5 to 10 carbon atoms include tetrapentylammonium cations, tetrahexylammonium cations, tetraoctylammonium cations, tetradecylammonium cations, and the like.
  • R 1 , R 2 , R 3 and R 4 in formula (1) are preferably alkyl groups having 5 or 6 carbon atoms, such as tetrapentylammonium cation (5 carbon atoms), tetrahexylammonium It preferably has a cation (6 carbon atoms) structure.
  • the compound represented by formula (1) is, for example, an aqueous solution of a salt containing an anion represented by formula (2) or formula (3) (hereinafter referred to as an anion component) and a salt containing the quaternary ammonium cation (by preparing aqueous solutions of each component (hereinafter referred to as a cation component) and mixing the two with stirring, the compound is produced as a precipitate.
  • the counter cation contained in the anion component is not particularly limited, and examples thereof include sodium cations and potassium cations.
  • the counter anion contained in the cation component is not particularly limited, and examples thereof include chloride anions and bromide anions.
  • the compound represented by the formula (1) can be obtained by collecting the generated precipitate by filtration.
  • the obtained compound represented by formula (1) is preferably dried at about 60 to 70°C.
  • a compound represented by formula (1) can be identified by a known method.
  • the hydrogen nuclear magnetic resonance ( 1 H NMR) spectrum of the compound represented by Formula (1) is a superposition of peaks derived from anions and cations that constitute the compound. These peaks can be distinguished by comparing the 1H NMR spectra of the anionic and cationic components, respectively.
  • the triplet peak derived from the alkyl terminal (CH 3 ) of the quaternary ammonium cation having four alkyl groups with 5 to 10 carbon atoms appears in the chemical shift value ( ⁇ ) region of 0.5 to 1.0. .
  • the peak becomes a single triplet peak and the integrated value is 12 ⁇ n.
  • the compound of the present invention preferably has a maximum absorption wavelength in the range of 350 nm or more and 700 nm or less in any of the range of 500 nm or more and 700 nm or less.
  • the maximum absorption wavelength of the compound of the present invention is within this range, the sensitivity of the photosensitive resin composition containing the compound of the present invention, which will be described later, can be improved.
  • the resin composition of the present invention contains the compound of the present invention and (A) an alkali-soluble resin.
  • the content of the compound represented by formula (1) in the resin composition is preferably 10 to 75 parts by mass, more preferably 20 to 50 parts by mass, relative to 100 parts by mass of the alkali-soluble resin (A).
  • the content of the compound represented by Formula (1) is 10 parts by mass or more, the light of the corresponding wavelength can be sufficiently absorbed. Further, by setting the amount to 75 parts by mass or less, it is possible to reduce the residue at the opening.
  • the mass ratio of the ammonium cation species in the formula (1) to the total mass of the organic cation species is preferably 50% by mass or more and 100% by mass or less.
  • the mass ratio of the ammonium cation species is within this range, the storage stability of the resin composition of the present invention during frozen storage can be enhanced.
  • the total mass of organic cationic species and the percentage mass of ammonium cationic species can be determined by cation chromatography.
  • the compound represented by formula (1) is a compound having a maximum absorption wavelength in the range of 500 nm or more and less than 580 nm in the range of 350 nm or more and 700 nm or less, and a compound having a maximum absorption wavelength in the range of 350 nm or more and 700 nm or less. It is preferable to contain a compound having a maximum absorption wavelength in the range of 580 nm or more and 700 nm or less. By containing these compounds, the transmittance of the cured product can be reduced over a wide range of the visible light region. Furthermore, if necessary, the cured product can be made black by using (C) a thermochromic compound described later in combination.
  • Examples of compounds represented by formula (1) having a maximum absorption wavelength in the range of 500 nm or more and less than 580 nm in the region of 350 nm or more and 700 nm or less include C.I. I. Compounds having an anion moiety of Acid Red 52,289 and the like can be mentioned. Examples of the compound represented by formula (1) having a maximum absorption wavelength in the range of 580 nm to 700 nm in the range of 350 nm to 700 nm include C.I. I. Compounds having an anion portion of Acid Blue 83 and 90 are included.
  • the total mass of all chlorine atoms and all bromine atoms contained in the resin composition is preferably 150 mass ppm or less with respect to the total mass of solids in the resin composition. , 100 ppm by mass or less, and more preferably less than 2 ppm by mass, which is the detection limit of combustion ion chromatography.
  • the total mass of all chlorine atoms and all bromine atoms contained in the resin composition can be determined, for example, by burning the resin composition in a combustion tube of an analyzer, absorbing the generated gas into a solution, and subjecting a part of the absorption liquid to ion chromatography. It can be determined by combustion ion chromatography with graphical analysis.
  • the resin composition of the present invention contains (A) an alkali-soluble resin.
  • An alkali-soluble resin is a resin having a dissolution rate of 50 nm/min or more as defined below. More specifically, a silicon wafer is coated with a solution obtained by dissolving a resin in ⁇ -butyrolactone, and prebaked at 120° C. for 4 minutes to form a prebaked film having a film thickness of 10 ⁇ m ⁇ 0.5 ⁇ m.
  • a resin having a dissolution rate of 50 nm/min or more which is obtained from the film thickness reduction when immersed in a 2.38% by mass tetramethylammonium hydroxide aqueous solution at 1° C. for 1 minute and then rinsed with pure water.
  • the alkali-soluble resin preferably has an acidic group in the structural unit of the resin and/or at the end of its main chain in order to impart alkali solubility.
  • Preferred acidic groups include carboxyl groups, hydroxyl groups, sulfonic acid groups, and thiol groups.
  • alkali-soluble resins include polyimides, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, phenolic resins, polymers composed of radically polymerizable monomers having alkali-soluble groups, siloxane polymers, and cyclic olefins. Polymers, cardo resins, and the like.
  • the alkali-soluble resin may contain two or more of these resins.
  • Alkali-soluble resin preferably contains one having high heat resistance.
  • the alkali-soluble resin has a temperature of 200° C. or higher after heat treatment. It is preferable to contain a material with a small amount of outgassing at a high temperature of .
  • the alkali-soluble resin preferably contains one or more selected from the group consisting of polyimides, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, and copolymers thereof. .
  • Polyimides, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, and their copolymers will be explained.
  • Polyimide is not particularly limited as long as it has an imide ring
  • polybenzoxazole is not particularly limited as long as it has a benzoxazole ring.
  • the polyimide precursor is not particularly limited as long as it has a structure that becomes a polyimide having an imide ring by dehydration and ring closure. It is not particularly limited as long as it has a structure that becomes oxazole.
  • Polyimides, polyimide precursors, polybenzoxazoles, and polybenzoxazole precursors are more preferably used as the alkali-soluble resin.
  • a polyimide has a structural unit represented by formula (5).
  • R 56 represents a 4- to 10-valent organic group
  • R 57 represents a 2- to 10-valent organic group
  • R 58 and R 59 each independently represent a hydroxyl group, a carboxy group, a sulfonic acid group, a thiol group, or a substituent represented by formula (6) or formula (7).
  • p represents an integer of 0 to 6
  • q represents an integer of 0 to 8, and p+q>0.
  • R 60 to R 62 each independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an acyl group having 2 to 6 carbon atoms, or represents an aryl group.
  • the above alkyl group, acyl group and aryl group may be unsubstituted or substituted.
  • a polyimide precursor has a structural unit represented by formula (8).
  • R 63 represents a 4- to 10-valent organic group
  • R 64 represents a 2- to 10-valent organic group
  • R 65 represents a substituent represented by the formula (6) or formula (7)
  • R 66 represents a hydroxyl group, a sulfonic acid group, or a thiol group
  • R 67 represents a hydroxyl group, a sulfonic acid group, a thiol group, or the formula ( 6) or a substituent represented by formula (7)
  • r represents an integer of 2 to 8
  • s represents an integer of 0 to 6
  • t represents an integer of 0 to 8, and 2 ⁇ r+s ⁇ 8.
  • Polybenzoxazole has a structural unit represented by formula (9).
  • R 68 represents a divalent to 10-valent organic group
  • R 69 represents a 4- to 10-valent organic group having an aromatic structure
  • R 70 and R 71 each independently represent a hydroxyl group, a carboxy group, a sulfonic acid group, a thiol group, or a substituent represented by formula (6) or formula (7).
  • u represents an integer from 0 to 8
  • v represents an integer from 0 to 6, and u+v>0.
  • a polybenzoxazole precursor has a structural unit represented by formula (10).
  • R 72 represents a divalent to 10-valent organic group having an aromatic structure
  • R 73 represents a 4- to 10-valent organic group
  • R 74 represents a sulfonic acid group, a thiol group or a substituent represented by formula (6) or formula (7)
  • R 75 represents a hydroxyl group, carboxy group, sulfonic acid group, thiol group or formula (6) or formula ( represents a substituent represented by 7);
  • w represents an integer of 2 to 8
  • x represents an integer of 0 to 8
  • y represents an integer of 0 to 6, and 2 ⁇ w+y ⁇ 8.
  • At least one selected from the group consisting of polyimides, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, and copolymers thereof is the above formula (5), formula (8), formula (9) or formula It preferably has 5 to 100,000 structural units represented by (10). Further, one or more selected from the group consisting of polyimides, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, and copolymers thereof is the above formula (5), formula (8), formula (9) Alternatively, it may have other structural units in addition to the structural units represented by formula (10).
  • At least one selected from the group consisting of polyimides, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, and copolymers thereof is the above formula (5), formula (8), formula (9) ) or formula (10) in an amount of 50 mol % or more, more preferably 70 mol % or more of the total number of structural units.
  • R 56 -(R 58 ) p in formula (5) and (R 65 ) r -R 63 -(R 66 ) s in formula (8) are residues of tetracarboxylic acid or derivatives thereof. show. Residues of tetracarboxylic acid derivatives include residues of tetracarboxylic dianhydrides, tetracarboxylic acid dichlorides, and tetracarboxylic acid active diesters.
  • residues of tetracarboxylic acids or derivatives thereof include pyromellitic acid, 3,3′,4,4′-biphenyltetracarboxylic acid, 2,3,3′,4′-biphenyltetracarboxylic acid.
  • R 76 represents an oxygen atom, C(CF 3 ) 2 or C(CH 3 ) 2 .
  • R77 and R78 each independently represent a hydrogen atom or a hydroxyl group.
  • R 68 -(R 70 ) u in the formula (9) and R 72 -(R 74 ) x in the formula (10) each represent a residue of a dicarboxylic acid or a derivative thereof.
  • Residues of dicarboxylic acid derivatives include residues of dicarboxylic anhydrides, dicarboxylic acid chlorides, dicarboxylic acid active esters, tricarboxylic acid anhydrides, tricarboxylic acid chlorides, tricarboxylic acid active esters, and diformyl compounds.
  • dicarboxylic acid residues or residues of derivatives thereof examples include terephthalic acid, isophthalic acid, diphenyletherdicarboxylic acid, bis(carboxyphenyl)hexafluoropropane, biphenyldicarboxylic acid, benzophenonedicarboxylic acid, triphenyldicarboxylic acid, etc., or , their dicarboxylic acid anhydrides, dicarboxylic acid chlorides, dicarboxylic acid active esters, and the like.
  • tricarboxylic acid residues or residues of derivatives thereof include trimellitic acid, trimesic acid, diphenylethertricarboxylic acid, biphenyltricarboxylic acid, etc., or tricarboxylic acid anhydrides, tricarboxylic acid chlorides, and tricarboxylic acids thereof. Examples include residues such as active esters.
  • R 57 -(R 59 ) q in formula (5) and R 64 -(R 67 ) t in formula (8) represent a residue of diamine or a derivative thereof.
  • R 69 -(R 71 ) v in formula (9) and (OH) w -R 73 -(R 75 ) y in formula (10) are bisaminophenol compounds or derivative residues thereof among diamines. represents Diamine and bisaminophenol derivatives include diisocyanate compounds or trimethylsilylated diamines.
  • residues of diamines and bisaminophenol compounds or residues of derivatives thereof include 3,4′-diaminodiphenyl ether, 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenylmethane, 4,4′-diamino diphenylmethane, 1,4-bis(4-aminophenoxy)benzene, benzidine, m-phenylenediamine, p-phenylenediamine, 1,5-naphthalenediamine, 2,6-naphthalenediamine, bis(4-aminophenoxy)biphenyl, bis ⁇ 4-(4-aminophenoxy)phenyl ⁇ ether, 1,4-bis(4-aminophenoxy)benzene, 2,2'-dimethyl-4,4'-diaminobiphenyl, 2,2'-diethyl-4 ,4'-diaminobiphenyl, 3,3'-dimethyl-4,4
  • R 76 represents an oxygen atom, C(CF 3 ) 2 or C(CH 3 ) 2 .
  • R 77 to R 80 each independently represent a hydrogen atom or a hydroxyl group.
  • alkali-soluble resins by blocking the terminal of these alkali-soluble resins with a monoamine, acid anhydride, acid chloride, or monocarboxylic acid having an acidic group, an alkali-soluble resin having an acidic group at the main chain terminal can be obtained.
  • Preferred examples of such monoamines having an acidic group include 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 4-aminosalicylic acid, 5-aminosalicylic acid, 6-aminosalicylic acid, 3-amino -4,6-dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2-aminothiophenol, 3-aminothiophenol, 4-aminothiophenol and the like. You may use 2 or more types of these.
  • acid anhydrides, acid chlorides and monocarboxylic acids include acids such as phthalic anhydride, maleic anhydride, nadic anhydride, cyclohexanedicarboxylic anhydride and 3-hydroxyphthalic anhydride.
  • Monocarboxylic acids such as anhydride, 3-carboxyphenol, 4-carboxyphenol, 3-carboxythiophenol, 4-carboxythiophenol, monoacid chloride compounds in which the carboxyl groups of these are acid chlorides, monoacid chloride compounds and N -hydroxybenzotriazole and active ester compounds obtained by reaction with N-hydroxy-5-norbornene-2,3-dicarboximide. You may use 2 or more types of these.
  • the (A) alkali-soluble resin used in the resin composition is synthesized by a known method.
  • the production methods include, for example, a method of reacting a tetracarboxylic dianhydride and a diamine compound at a low temperature, and a method of obtaining a diester with a tetracarboxylic dianhydride and an alcohol.
  • polyimide it can be obtained, for example, by subjecting the polyamic acid or polyamic acid ester obtained by the method described above to dehydration and ring closure by heating or chemical treatment with an acid or base.
  • a polybenzoxazole precursor such as polyhydroxyamide
  • it can be obtained by a condensation reaction between a bisaminophenol compound and a dicarboxylic acid.
  • a solution of dichloride is added dropwise.
  • polybenzoxazole it can be obtained, for example, by dehydrating and ring-closing the polyhydroxyamide or the like obtained by the above-described method by heating or chemical treatment with an acid or base.
  • the content of the alkali-soluble resin is the resin composition 100 from the viewpoint of obtaining excellent properties as planarizing films, pixel dividing layers, partition walls, and protective films used in organic light-emitting devices, display devices, and semiconductor elements. It is preferably contained in an amount of 0.5% by mass or more and 50% by mass or less, more preferably 1% by mass or more and 30% by mass or less.
  • the resin composition of the present invention preferably further contains (B) a photosensitive compound.
  • a photosensitive compound By containing a photosensitive compound, the resin composition can be made into a photosensitive resin composition and patterned by photolithography.
  • Photosensitive compounds include photoacid generators and photopolymerization initiators. From the viewpoint of resolution, the photosensitive compound preferably contains a photoacid generator.
  • a quinonediazide compound, a sulfonium salt, a phosphonium salt, a diazonium salt, an iodonium salt, and the like can be contained as the photoacid generator.
  • the photosensitive compound preferably contains a quinonediazide compound.
  • the quinonediazide compound includes a polyhydroxy compound in which quinonediazide sulfonic acid is ester-bonded, a polyamino compound in which quinonediazide sulfonic acid is sulfonamide-bonded, and a polyhydroxypolyamino compound in which quinonediazide sulfonic acid is ester-bonded and/or sulfonamide. and the like.
  • the quinonediazide compound contains a compound in which the sulfonic acid of quinonediazide is ester-bonded to the hydroxy groups of the polyhydroxy compound, and the sulfonic acid of quinonediazide is It is more preferable that the ratio of hydroxy groups ester-bonded with is 50 mol % or more and 90 mol % or less.
  • the affinity of the quinonediazide compound to an alkaline aqueous solution is reduced, and the solubility of the unexposed area of the resin composition in an alkaline aqueous solution is greatly reduced.
  • the sulfonyl group is changed to indenecarboxylic acid, and a high dissolution rate in an alkaline aqueous solution of the resin composition in the exposed area can be obtained.
  • a pattern can be obtained with resolution.
  • the quinonediazide compound substituted by 90 mol % or less it is possible to suppress the residue in the pattern openings.
  • a positive photosensitive resin composition that is sensitive to i-line (365 nm), h-line (405 nm) and g-line (436 nm) of a general mercury lamp.
  • the photoacid generators may be used alone or in combination of two or more, and a highly sensitive photosensitive resin composition can be obtained.
  • both a 5-naphthoquinonediazidesulfonyl group and a 4-naphthoquinonediazidesulfonyl group are preferably used.
  • a 5-naphthoquinonediazide sulfonyl ester compound has absorption extending to the g-line region of a mercury lamp, and is suitable for g-line exposure and full-wavelength exposure.
  • a 4-naphthoquinonediazide sulfonyl ester compound has absorption in the i-line region of a mercury lamp and is suitable for i-line exposure.
  • a 4-naphthoquinonediazide sulfonyl ester compound or a 5-naphthoquinone diazidesulfonyl ester compound depending on the exposure wavelength.
  • a naphthoquinonediazidesulfonyl ester compound can be obtained by using a 4-naphthoquinonediazidesulfonyl group and a 5-naphthoquinonediazidesulfonyl group in the same molecule together, or a 4-naphthoquinonediazidesulfonyl ester compound and a 5-naphthoquinonediazidesulfonyl ester compound. can also be used together.
  • the molecular weight of the photoacid generator is preferably 300 or more, more preferably 350 or more, preferably 3000 or less, more preferably 1500 or less, from the viewpoint of heat resistance, mechanical properties, and adhesiveness of the cured product obtained by heat treatment. is.
  • the content of the photosensitive compound is preferably 1 part by mass or more, more preferably 3 parts by mass or more, and preferably 100 parts by mass or less, more preferably with respect to 100 parts by mass of the alkali-soluble resin (A). is 80 parts by mass or less. If it is 1 to 100 parts by mass, photosensitivity can be imparted while maintaining the heat resistance, chemical resistance and mechanical properties of the cured product after heat treatment.
  • the resin composition of the present invention preferably further contains (C) a thermochromic compound.
  • the thermochromic compound does not have a maximum absorption wavelength in the region of 350 nm or more and 700 nm or less before heating, and generates a maximum absorption wavelength in any of the regions of 350 nm or more and 700 nm or less by heating at 120 ° C. or more (hereinafter , sometimes referred to as “thermocoloring”).
  • the thermochromogenic compound preferably contains a compound that, when heated at 120° C. or higher, produces a maximum absorption wavelength in any of the regions of 350 nm to 700 nm and 350 nm to 500 nm.
  • thermochromic compound is preferably a thermochromic compound that thermally develops color at a temperature higher than 180°C.
  • the higher the temperature at which the thermochromic compound thermally develops color the better the heat resistance under high temperature conditions, and the less the color fades due to prolonged irradiation with ultraviolet light and visible light, and the better the light resistance.
  • thermochromogenic compound may be a general heat-sensitive dye or pressure-sensitive dye, or may be another compound.
  • thermochromic compounds are those that develop color by changing their chemical structure and charge state due to the action of acidic groups coexisting in the system during heat treatment at 120 ° C. or higher, or those that develop color by the presence of oxygen in the air. Examples include those that cause a thermal oxidation reaction or the like to develop a thermal color.
  • thermochromic compound examples include a triarylmethane skeleton, a diarylmethane skeleton, a fluorane skeleton, a bislactone skeleton, a phthalide skeleton, a xanthene skeleton, a rhodamine lactam skeleton, a fluorene skeleton, a phenothiazine skeleton, a phenoxazine skeleton, and a spiropyran skeleton. be done.
  • Specific examples include the compounds described in JP-A-2004-326094. Among them, a hydroxyl group-containing compound having a triarylmethane skeleton is particularly preferable because of its high heat color development temperature and excellent heat resistance. These may be contained singly or in combination.
  • thermochromogenic compound contains an aromatic hydrocarbon compound having at least one aromatic C—H bond and at least three phenolic hydroxyl groups in one aromatic ring, and further, the formula (4) It is also preferable to contain a triazine ring-containing compound represented by.
  • R 50 to R 55 are each independently a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkenyl ether group having 2 to 10 carbon atoms, It represents a methylol group and an alkoxymethyl group having 2 to 10 carbon atoms. At least one of R 50 to R 55 is a methylol group or an alkoxymethyl group having 2 to 10 carbon atoms.
  • Aromatic hydrocarbons having at least one aromatic C—H bond and three phenolic hydroxyl groups in one aromatic ring include, for example, phloroglucinol, pyrogallol, 1,2.4-trihydroxybenzene, 2,4 ,5-trihydroxybenzaldehyde, 2,3,4-trihydroxybenzaldehyde, 3,4,5-trihydroxybenzaldehyde, galacetophenone, 2,3,4-trihydroxybenzoic acid, gallic acid, methyl gallate, ethyl gallate , propyl gallate, octyl gallate, 2,3,4-trihydroxybenzophenone, 2,3,4,4′-tetrahydroxybenzophenone and the like.
  • aromatic hydrocarbons having at least one aromatic C—H bond and four or more phenolic hydroxyl groups in one aromatic ring include 1,2,3,4-tetrahydroxybenzene, 1,2, 3,5-tetrahydroxybenzene, 1,2,4,5-tetrahydroxybenzene, leucoquinizarin and the like.
  • at least one substitution position of the other phenolic hydroxyl group for one of the phenolic hydroxyl groups is preferably the ortho or para position.
  • the Examples of the compound in which at least one substitution position of the other phenolic hydroxyl group with respect to any phenolic hydroxyl group is at the para position include 1,2.4-trihydroxybenzene, 2,4,5-trihydroxybenzaldehyde, 1, 2,3,4-tetrahydroxybenzene, 1,2,3,5-tetrahydroxybenzene, 1,2,4,5-tetrahydroxybenzene, leucoquinizarin and the like.
  • R 50 to R 55 has a methylol group or an alkoxymethyl group, and are preferably two or more, more preferably three or more, even more preferably four or more, and most preferably all six are methylol groups or alkoxymethyl groups.
  • Alkoxymethyl groups include methoxymethyl, ethoxymethyl, propoxymethyl and butoxymethyl groups.
  • the content of (C) the thermochromic compound used in the present invention is preferably 5 to 80 parts by mass, particularly preferably 10 to 60 parts by mass, per 100 parts by mass of the (A) alkali-soluble resin.
  • the content of (C) the thermochromic compound is 5 parts by mass or more, the transmittance of the cured product in the ultraviolet-visible region can be reduced. Moreover, if it is 80 parts by mass or less, the heat resistance and strength of the cured product can be maintained, and the water absorption can be reduced.
  • the resin composition of the present invention may contain other colorants.
  • coloring agents include dyes, organic pigments, and inorganic pigments, and can be used according to the purpose.
  • the resin composition of the present invention includes a compound represented by formula (1), (A) an alkali-soluble resin, (B) a photosensitive compound, (C) a thermochromic compound, and other compounds other than colorants, such as heat Various known additives such as a cross-linking agent, a compound having a phenolic hydroxyl group, an adhesion improver and a surfactant may be contained.
  • the resin composition of the present invention may contain a solvent.
  • Solvents include N-methyl-2-pyrrolidone, ⁇ -butyrolactone, ⁇ -valerolactone, ⁇ -valerolactone, N,N-dimethylformamide, N,N-dimethylacetamide, dimethylsulfoxide, 1,3-dimethyl-2 - polar aprotic solvents such as imidazolidinone, N,N'-dimethylpropylene urea, N,N-dimethylisobutyamide, methoxy-N,N-dimethylpropionamide, tetrahydrofuran, dioxane, propylene glycol monomethyl ether, propylene ethers such as glycol monoethyl ether; ketones such as acetone, methyl ethyl ketone and diisobutyl ketone; esters such as ethyl acetate, butyl acetate, isobutyl
  • the content of the solvent is preferably 100 parts by mass or more in order to dissolve the composition in 100 parts by mass of the alkali-soluble resin (A). Moreover, the content of the solvent is preferably 10000 parts by mass or less, more preferably 5000 parts by mass or less with respect to 100 parts by mass of the (A) alkali-soluble resin, from the viewpoint of coating properties.
  • the resin composition of the present invention can be used for forming insulating films, protective films, flattening films, etc. of semiconductor elements and display devices. Among them, it is preferably used for forming a planarizing layer and a pixel dividing layer of an organic EL display device because it is excellent in high heat resistance and low outgassing property to a planarizing layer and a pixel dividing layer. From the point of view of improving the contrast, it is particularly preferable to be used for forming the pixel division layer of the organic EL display device.
  • a compound represented by formula (1) (A) an alkali-soluble resin, optionally (B) a photosensitive compound, (C) a thermochromic compound, and other coloring agents, which are components constituting the resin composition of the present invention. , a thermal cross-linking agent, a compound having a phenolic hydroxyl group, an adhesion improver, a surfactant, a solvent, etc., to obtain a resin composition.
  • the resin composition to be used in the method for producing a resin composition film of the present invention which will be described later, contains a solvent to dissolve the respective components. In such a case, methods for promoting dissolution include heating and stirring.
  • the heating temperature is preferably set within a range that does not impair the performance of the resin composition, and is usually room temperature to 80°C. In this specification, room temperature is 25°C.
  • the order of dissolving each component is not particularly limited, and for example, a method of sequentially dissolving a compound having a low solubility in a solvent may be used.
  • the rotation speed is preferably set within a range that does not impair the performance of the resin composition, and is usually 200 rpm to 2000 rpm. Even when the mixture is stirred, it may be heated as necessary, and the temperature is usually from room temperature to 80°C.
  • ingredients that tend to generate air bubbles during stirring and dissolution such as surfactants and some adhesion improvers
  • dissolving the other ingredients before adding them at the end will prevent poor dissolution of other ingredients due to air bubbles. can be prevented.
  • the obtained resin composition is preferably filtered using a filtration filter to remove dust and particles.
  • filter pore sizes include, but are not limited to, 0.5 ⁇ m, 0.2 ⁇ m, 0.1 ⁇ m, 0.05 ⁇ m, and 0.02 ⁇ m.
  • Materials for the filter include polypropylene (PP), polyethylene (PE), nylon (NY), polytetrafluoroethylene (PTFE), etc., and polyethylene and nylon are preferred.
  • PP polypropylene
  • PE polyethylene
  • nylon NY
  • PTFE polytetrafluoroethylene
  • polyethylene and nylon are preferred.
  • a first aspect of the cured product of the present invention is a cured product obtained by curing the resin composition of the present invention.
  • a second aspect of the cured product of the present invention is a cured product containing the compound of the present invention.
  • the cured product of the present invention can be obtained, for example, by coating a substrate or the like with a resin composition containing the compound represented by the above formula (1), followed by heat treatment and curing.
  • the heat treatment conditions are preferably 200° C. or higher, more preferably 250° C. or higher.
  • the heat treatment conditions are preferably 400° C. or lower, more preferably 350° C. or lower.
  • (1) the above-described resin composition is applied to a substrate to form a coating film, (2) the coating film is exposed to actinic radiation, and the exposed coating (3) developing the exposed coating film with an alkaline solution to obtain a developed coating film; and (4) heating the developed coating film to obtain a cured product. have in this order.
  • the resin composition of the present invention is applied by, for example, a spin coating method, a slit coating method, a dip coating method, a spray coating method, a printing method, etc., and the resin composition is coated. Get a coating of things.
  • the substrate to be coated with the resin composition may be pretreated with the above-described adhesion improver.
  • a solution obtained by dissolving 0.5 to 20% by mass of an adhesion improver in a solvent such as isopropanol, ethanol, methanol, water, tetrahydrofuran, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, ethyl lactate, and diethyl adipate is used.
  • a method of treating the substrate surface include spin coating, slit die coating, bar coating, dip coating, spray coating, vapor treatment, and the like.
  • the formed coating film is optionally dried under reduced pressure, and then using a hot plate, oven, infrared rays, etc., in the range of 50 ° C. to 180 ° C. for 1 minute to several hours.
  • a coating film is obtained by applying the heat treatment of.
  • the coating film is irradiated with actinic radiation (hereinafter sometimes referred to as exposure). At this time, if necessary, the exposure may be performed through a photomask having a desired pattern, or the coating film may be exposed directly with a laser or the like.
  • Actinic rays used for exposure include ultraviolet rays, visible rays, electron beams, X-rays, etc. In the present invention, i-rays (365 nm), h-rays (405 nm) and g-rays (436 nm) of mercury lamps can be used. preferable.
  • the exposed coating film is developed using an alkaline solution to remove the exposed portion of the coating film.
  • the developer at this time is tetramethylammonium hydroxide, diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol. , dimethylaminoethyl methacrylate, cyclohexylamine, ethylenediamine, hexamethylenediamine, and other alkaline compounds.
  • these alkaline aqueous solutions are added with a polar solvent such as N-methyl-2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide, dimethylsulfoxide, ⁇ -butyrolactone, dimethylacrylamide, methanol, ethanol,
  • a polar solvent such as N-methyl-2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide, dimethylsulfoxide, ⁇ -butyrolactone, dimethylacrylamide, methanol, ethanol,
  • Alcohols such as isopropanol, esters such as ethyl lactate and propylene glycol monomethyl ether acetate, and ketones such as cyclopentanone, cyclohexanone, isobutyl ketone and methyl isobutyl ketone may be added.
  • methods such as spray, puddle, immersion, and ultrasonic waves are possible.
  • alcohols such as ethanol and isopropyl alcohol
  • esters such as ethyl lactate and propylene glycol monomethyl ether acetate may be added to the distilled water for rinsing.
  • the step of heat-treating the developed coating film to obtain a cured product By heat-treating the developed coating film, the residual solvent and components with low heat resistance can be removed, so that the heat resistance and chemical resistance of the cured product can be improved.
  • a certain temperature is selected and the temperature is raised stepwise, or a certain temperature range is selected and the temperature is raised continuously for 5 minutes to 5 hours.
  • a method of heat-treating at 230° C. for 60 minutes can be used.
  • the heat treatment conditions in the present invention are preferably 200° C. or higher, more preferably 230° C. or higher.
  • the heat treatment conditions are preferably 400° C. or lower, more preferably 350° C. or lower.
  • the display device of the present invention comprises the cured product of the present invention.
  • a cured product obtained by curing the resin composition is a substrate on which TFTs are formed, a flattening layer on the driving circuit, a pixel dividing layer and a display element on the first electrode, and a flattening layer of a display device having the second electrode in this order. and the pixel division layer.
  • Examples of display devices having such a configuration include liquid crystal display devices and organic EL display devices.
  • the pixel division layer is particularly suitable for use in organic EL display devices in which high heat resistance and low outgassing properties are required for the planarization layer and the pixel division layer, and can improve the contrast of the organic EL display device. is particularly preferably used for
  • a cured product obtained by curing the resin composition of the present invention may be used for either one of the flattening layer and the pixel dividing layer, or may be used for both.
  • An active matrix type display device has a TFT and wirings located on the sides of the TFT and connected to the TFT on a substrate such as glass, and has a flattening layer thereon so as to cover unevenness. Furthermore, a display element is provided on the planarization layer. The display element and the wiring are connected through a contact hole formed in the planarization layer.
  • the resin compositions prepared in Examples and Comparative Examples were spun onto a glass substrate (manufactured by Geomatec Co., Ltd.; hereinafter referred to as "ITO substrate") on which an ITO film was formed by sputtering. It was applied by spin coating using a coater (MS-A100; manufactured by Mikasa) so that the film thickness after heat treatment (cure) was 3.0 ⁇ m, and a buzzer hot plate (HPD-3000BZN; manufactured by AS ONE) was used. was prebaked at 120° C. for 120 seconds to prepare a prebaked film. The resulting prebaked film was developed with a 2.38% by mass tetramethylammonium (TMAH) aqueous solution for 60 seconds to obtain a desired film thickness, and then rinsed with pure water to obtain a developed film.
  • TMAH mass tetramethylammonium
  • the film thicknesses of the pre-baked film and the developed film at the center of the substrate are measured using a stylus profiler (P-15; manufactured by KLA-Tencor Co., Ltd.). determined as follows.
  • Remaining film ratio [%] (film thickness of developed film)/(film thickness of prebaked film) x 100
  • C Remaining film rate is less than 50%.
  • Aperture dimension change [ ⁇ m] (aperture dimension after development) - (aperture dimension after curing)
  • FIGS. 1(a) Schematic diagrams of the substrates used are shown in FIGS.
  • an ITO transparent conductive film of 10 nm was formed on the entire surface of the substrate by a sputtering method and etched as a first electrode 2 .
  • an auxiliary electrode 3 was also formed in order to take out the second electrode (FIG. 1(a)).
  • the obtained substrate was ultrasonically cleaned for 10 minutes with "Semicoclean" (registered trademark) 56 (trade name, manufactured by Furuuchi Chemical Co., Ltd.) and then cleaned with ultrapure water.
  • the entire surface of the substrate was coated with the photosensitive resin composition prepared in each example and comparative example by spin coating, and prebaked on a hot plate at 100° C. for 2 minutes.
  • the film was exposed to UV light through a photomask, it was developed with a 2.38 mass % tetramethylammonium hydroxide aqueous solution to dissolve only the exposed portion, and then rinsed with pure water.
  • the resulting pattern was cured in an oven at 230° C. for 60 minutes under a nitrogen atmosphere.
  • the pixel division layer 4 having a width of 70 ⁇ m and a length of 260 ⁇ m is arranged at a pitch of 155 ⁇ m in the width direction and a pitch of 465 ⁇ m in the length direction, and each opening exposes the first electrode. It is formed only in the effective area of the substrate (FIG. 1(b)). Note that this opening finally becomes a light-emitting pixel.
  • the effective area of the substrate was 16 mm square, and the thickness of the insulating layer was about 1.0 ⁇ m.
  • an organic EL display device was produced using the substrate on which the first electrode 2, the auxiliary electrode 3 and the pixel dividing layer 4 were formed.
  • an organic EL layer 5 including a light-emitting layer was formed by a vacuum deposition method (FIG. 1(c)).
  • the degree of vacuum during vapor deposition was 1 ⁇ 10 ⁇ 3 Pa or less, and the substrate was rotated with respect to the vapor deposition source during vapor deposition.
  • 10 nm of compound (HT-1) was deposited as a hole injection layer
  • 50 nm of compound (HT-2) was deposited as a hole transport layer.
  • a compound (GH-1) as a host material and a compound (GD-1) as a dopant material were deposited on the light-emitting layer to a thickness of 40 nm with a doping concentration of 10%.
  • compounds (ET-1) and (LiQ) as electron-transporting materials were laminated at a volume ratio of 1:1 to a thickness of 40 nm. Structures of compounds used in the organic EL layer are shown below.
  • the film thickness referred to here is the value displayed by the crystal oscillation type film thickness monitor.
  • the produced organic EL display device was driven to emit light by direct current driving at 10 mA/cm 2 , and the light emitting area in the light emitting pixel (light emitting area before UV light irradiation) was measured. Next, it was placed on a hot plate heated to 80° C. with the light-emitting surface facing up, and irradiated with UV light having a wavelength of 365 nm and an illuminance of 0.6 mW/cm 2 . After 1000 hours, light was emitted by direct current driving at 10 mA/cm 2 , and the light-emitting area in the light-emitting pixel (light-emitting area after UV light irradiation) was measured.
  • Luminescent area ratio [%] (luminous area after UV light irradiation) / (luminous area before UV light irradiation) x 100
  • the measurement area was about 201 cm 2 inside a circle with a radius of 8 cm from the center of the wafer, and the number of foreign substances (defect density) per 1 cm 2 of the coating film was determined. "A” when the defect density per substrate is less than 1.00/cm 2 , "B” when it is 1.00/cm 2 or more and less than 3.00/cm 2 , When it was 3.00/cm 2 or more, it was judged as "C".
  • Table 1 shows the anion components and cation components used in Synthesis Examples 1-11.
  • HA hydroxy group-containing diamine compound
  • Example 1 Under yellow light, the compound z-1 obtained in Synthesis Example 1 as the compound represented by formula (1), (A) the polyimide precursor resin a-1 obtained in Synthesis Example 12 as an alkali-soluble resin, (B) photosensitive compound b-1 obtained in Synthesis Example 13 as a chemical compound, compound c-1 as a thermochromic compound (C), thermal cross-linking agent d-1 as other additives, ⁇ -butyrolactone (GBL) and ethyl lactate as a solvent ( EL) was added in the amount shown in Table 1 and dissolved by stirring to prepare composition 1.
  • composition 1 we evaluated the residual film ratio, change in opening size, and reliability.
  • Examples 2 to 11 Comparative Examples 1 to 3
  • Compositions 2 to 14 were prepared according to the compositions shown in Table 2 in the same manner as in Example 1.
  • Compositions 2-14 were evaluated in the same manner as in Example 1.
  • compositions 1 and 11 were evaluated for frozen storage stability.
  • Tables 2 and 3 show the compositions and evaluation results of the resin compositions of Examples and Comparative Examples.
  • compositions 12 to 14 which did not contain the compound represented by formula (1), had a low residual film rate. It was confirmed that the resin composition containing the compound represented by the formula (1) of the present invention has a high residual film rate.
  • the compound, resin composition, and cured product of the present invention can be used as a surface protective film of a semiconductor device, an interlayer insulating film, a pixel division layer of an organic EEL device, a flattening film of a driving TFT substrate of a display device using an organic EL device, It is suitably used for wiring protective insulating films for circuit boards, on-chip microlenses for solid-state imaging devices, flattening films for various displays and solid-state imaging devices, and solder resists for circuit boards.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Materials For Photolithography (AREA)

Abstract

The purpose of the present invention is to provide: a resin composition achieving a high residual film rate when alkaline development is performed; and a compound employed therein. In order to achieve the aforementioned purpose, the compound of the present invention takes the form represented by formula (1). (In the formula, An- represents an anion that has a specific structure and that has n valency. R1-R4 each independently represent an alkyl group having 5-10 carbon atoms. n represents an integer from 1 to 3.)

Description

化合物、樹脂組成物、硬化物、及び表示装置Compound, resin composition, cured product, and display device
 本発明は、化合物、樹脂組成物、及びこれを用いた硬化物、及び表示装置に関する。 The present invention relates to a compound, a resin composition, a cured product using the same, and a display device.
 ポリイミドやポリベンゾオキサゾールを含む組成物を硬化させて得られる硬化物は、半導体素子や表示装置の絶縁膜、保護膜、及び平坦化膜などに広く使用されている。その中で表示装置に使用される時、例えば有機エレクトロルミネッセンス(Electroluminescence:以下ELと記す。)ディスプレイの画素分割層や液晶ディスプレイのブラックマトリクスなどの用途においては、コントラストを向上させるために硬化物の光透過率を低くすることが求められている。また、表示装置の駆動用薄膜トランジスタ(Thin Film Transistor:以下TFTと記す。)への光の進入による劣化や誤作動、リーク電流などを防ぐために、有機ELディスプレイの画素分割層や有機ELディスプレイのTFT基板上に設けられる平坦化膜にも透過率を低くすることが求められる。 Cured products obtained by curing compositions containing polyimide and polybenzoxazole are widely used as insulating films, protective films, and planarizing films for semiconductor devices and display devices. Among them, when used in a display device, for example, in applications such as organic electroluminescence (Electroluminescence: hereinafter referred to as EL) display pixel division layer and liquid crystal display black matrix, the cured product is used to improve contrast. It is required to lower the light transmittance. In addition, in order to prevent deterioration, malfunction, leakage current, etc. due to light entering the driving thin film transistor (hereinafter referred to as TFT) of the display device, the pixel division layer of the organic EL display and the TFT of the organic EL display A planarizing film provided on the substrate is also required to have a low transmittance.
 硬化物における400nm以上の可視光領域の光透過率を低下させる技術としては、液晶ディスプレイ用ブラックマトリクス材料やRGBペースト材料にみられるように、樹脂組成物にカーボンブラックや有機・無機顔料、染料などの着色剤を添加する方法が挙げられる。 As a technique for reducing the light transmittance in the visible light region of 400 nm or more in the cured product, carbon black, organic / inorganic pigments, dyes, etc. are added to the resin composition, as seen in black matrix materials for liquid crystal displays and RGB paste materials. and a method of adding a coloring agent.
 樹脂組成物において硬化物の光透過率を低下させる技術としては、例えば、アルカリ可溶性樹脂にキノンジアジド化合物、アルカリ性現像液及び有機溶剤の双方に可溶な色素を添加する方法(特許文献1参照)、感光性樹脂に黒色の油溶性染料を添加する方法(特許文献2参照)、アルカリ可溶性耐熱性樹脂にエステル化したキノンジアジド化合物と染料、無機顔料、有機顔料から選ばれる少なくとも1種の着色剤を添加する方法(特許文献3参照)、及びバインダー樹脂にキサンテン系酸性染料およびトリアリールメタン系酸性染料を添加する方法(特許文献4参照)、などがある。 Techniques for reducing the light transmittance of a cured product in a resin composition include, for example, a method of adding a quinonediazide compound to an alkali-soluble resin, a dye soluble in both an alkaline developer and an organic solvent (see Patent Document 1), A method of adding a black oil-soluble dye to a photosensitive resin (see Patent Document 2), and adding at least one colorant selected from an esterified quinonediazide compound and a dye, an inorganic pigment, and an organic pigment to an alkali-soluble heat-resistant resin. (see Patent Document 3), and a method of adding a xanthene-based acid dye and a triarylmethane-based acid dye to a binder resin (see Patent Document 4).
特開平7-261015号公報JP-A-7-261015 特開平10-254129号公報JP-A-10-254129 特開2004-145320号公報Japanese Patent Application Laid-Open No. 2004-145320 特開2013-50707号公報JP 2013-50707 A
 しかしながら、これらの技術では、染料を使用していることでアルカリ現像の際の膜減りが大きく、残膜率が低いという課題があった。 However, with these technologies, there was a problem that the film loss during alkali development was large due to the use of dyes, and the residual film rate was low.
 本発明は、以下の構成を有する。
[1]式(1)で表される化合物。
The present invention has the following configurations.
[1] A compound represented by formula (1).
Figure JPOXMLDOC01-appb-C000005
Figure JPOXMLDOC01-appb-C000005
(式(1)中、An-は式(2)又は式(3)で表されるn価のアニオンである。R~Rはそれぞれ独立して、炭素数5~10のアルキル基である。nは1~3の整数をとる。) (In formula (1), A n- is an n-valent anion represented by formula (2) or formula (3). R 1 to R 4 each independently represent an alkyl group having 5 to 10 carbon atoms) where n is an integer from 1 to 3.)
Figure JPOXMLDOC01-appb-C000006
Figure JPOXMLDOC01-appb-C000006
(式(2)中、R~Rは、それぞれ独立に、水素原子又は置換基を有してもよい炭素数1~10の1価の炭化水素基を表す。R~R14は、それぞれ独立に、水素原子又は炭素数1~5の1価の炭化水素基を表す。R15~R18は、それぞれ独立に、水素原子、ハロゲン原子、-SOH、-SO 、-SONR1920、-COOH、-COO、-COOR21、-CONR2223、-OR24、-NR2526又は置換基を有していてもよい炭素原子数1~20の1価の炭化水素基を表す。R19~R26は、それぞれ独立に、水素原子又は置換基を有してもよい炭素原子数1~20の1価の炭化水素基を表す。R~RおよびR15~R18のうち、少なくとも1つは、-SO 若しくは-COOを有する炭素数1~10の1価の炭化水素基、-SO 又は-COOである。Xは-SO 又は-COOを表す。) (In formula (2), R 5 to R 8 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms which may have a substituent. R 9 to R 14 are , each independently represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 5 carbon atoms, and R 15 to R 18 each independently represent a hydrogen atom, a halogen atom, —SO 3 H, —SO 3 , —SO 3 NR 19 R 20 , —COOH, —COO , —COOR 21 , —CONR 22 R 23 , —OR 24 , —NR 25 R 26 or optionally substituted carbon atoms 1 to 20 R 19 to R 26 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms which may have a substituent.R 5 At least one of R 8 and R 15 to R 18 is a monovalent hydrocarbon group having 1 to 10 carbon atoms having —SO 3 or —COO , —SO 3 or —COO .X represents —SO 3 or —COO .)
Figure JPOXMLDOC01-appb-C000007
Figure JPOXMLDOC01-appb-C000007
(式(3)中、R27~R30はそれぞれ独立に、水素原子又は置換基を有してもよい炭素数1~20の1価の炭化水素基を表す。R31~R36は、それぞれ独立に水素原子又は炭素数1~5の1価の炭化水素基を表す。R37~R41は、それぞれ独立に、水素原子、ハロゲン原子、-SOH、-SO 、-SONR4243、-COOH、-COO、-COOR44、-CONR4546、-OR47、-NR4849又は置換基を有していてもよい炭素原子数1~20の1価の炭化水素基を表す。R37~R41のうち、互いに隣接するもの同士は、互いに結合し、環状構造を形成してもよい。R42~R49は、それぞれ独立に、水素原子又は置換基を有してもよい炭素原子数1~20の1価の炭化水素基を表す。R27~R30およびR37~R41のうち、少なくとも2つは-SO 若しくは-COOを有する炭素数1~20の1価の炭化水素基、-SO 又は-COOである。)
[2]式(1)において、R、R、RおよびRがすべて同一の置換基である、上記[1]に記載の化合物。
[3]式(1)中のR、R、RおよびRのすべてが、炭素数5又は6のアルキル基である、上記[1]又は[2]に記載の化合物。
[4]350nm以上700nm以下の領域における最大吸収波長が、500nm以上700nm以下の領域のいずれかに存在する、上記[1]~[3]のいずれかに記載の化合物。
[5]上記[1]~[4]のいずれかに記載の化合物と、(A)アルカリ可溶性樹脂を含有する、樹脂組成物。
[6]前記樹脂組成物中の有機カチオン種の総質量に占める、前記式(1)中のアンモニウムカチオン種の質量の割合が、50質量%以上100質量%以下である、上記[5]に記載の樹脂組成物。
[7]上記[1]~[4]のいずれかに記載の化合物が、
350nm以上700nm以下の領域において、500nm以上580nm未満の範囲に極大吸収波長を有する化合物と、
350nm以上700nm以下の領域において、580nm以上700nm以下の範囲に極大吸収波長を有する化合物を含有する、請求項5又は6に記載の樹脂組成物。
[8]前記樹脂組成物中に含まれる全塩素原子と全臭素原子の総質量が、樹脂組成物の固形分の総質量に対して、150質量ppm以下である上記[5]~[7]のいずれかに記載の樹脂組成物。
[9]更に、(B)感光性化合物を含有する、上記[5]~[8]のいずれかに記載の樹脂組成物。
[10]前記(B)感光性化合物が、キノンジアジド化合物を含有する、上記[9]に記載の樹脂組成物。
[11]前記キノンジアジド化合物が、ポリヒドロキシ化合物のヒドロキシ基にキノンジアジドのスルホン酸がエステル結合した化合物を含有し、該ヒドロキシ基の全体100モル%に対して、キノンジアジドのスルホン酸とエステル結合しているヒドロキシ基の割合が、50モル%以上90モル%以下である、上記[10]に記載の樹脂組成物。
[12]更に、(C)熱発色性化合物を含有する、上記[5]~[11]のいずれかに記載の樹脂組成物。
[13]前記(C)熱発色性化合物が、120℃以上の加熱により、350nm以上700nm以下の領域において、350nm以上500nm以下の領域のいずれかに最大吸収波長を生じる化合物を含有する、上記[12]に記載の樹脂組成物。
[14]前記(C)熱発色性化合物が、1つの芳香環内に少なくとも1つの芳香族C-H結合および少なくとも3つのフェノール性水酸基を有する芳香族炭化水素化合物を含有し、さらに、式(4)で表されるトリアジン環含有化合物を含有する、上記[12]又は[13]に記載の樹脂組成物。
(In Formula (3), R 27 to R 30 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms which may have a substituent. R 31 to R 36 are Each independently represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 5 carbon atoms, and R 37 to R 41 each independently represent a hydrogen atom, a halogen atom, —SO 3 H, —SO 3 , —SO 3 NR 42 R 43 , -COOH, -COO - , -COOR 44 , -CONR 45 R 46 , -OR 47 , -NR 48 R 49 or 1 having 1 to 20 carbon atoms which may have a substituent represents a valent hydrocarbon group, adjacent ones among R 37 to R 41 may be bonded to each other to form a cyclic structure, and R 42 to R 49 each independently represent a hydrogen atom or represents an optionally substituted monovalent hydrocarbon group having 1 to 20 carbon atoms, wherein at least two of R 27 to R 30 and R 37 to R 41 are —SO 3 or —COO is a monovalent hydrocarbon group having 1 to 20 carbon atoms, —SO 3 or —COO .)
[2] The compound according to [1] above, wherein in formula (1), all of R 1 , R 2 , R 3 and R 4 are the same substituent.
[3] The compound according to [1] or [2] above, wherein all of R 1 , R 2 , R 3 and R 4 in formula (1) are alkyl groups having 5 or 6 carbon atoms.
[4] The compound according to any one of [1] to [3] above, wherein the maximum absorption wavelength in the region of 350 nm or more and 700 nm or less is present in any of the region of 500 nm or more and 700 nm or less.
[5] A resin composition containing the compound according to any one of [1] to [4] above and (A) an alkali-soluble resin.
[6] In the above [5], wherein the mass ratio of the ammonium cation species in the formula (1) to the total mass of the organic cation species in the resin composition is 50% by mass or more and 100% by mass or less. The described resin composition.
[7] The compound according to any one of [1] to [4] above,
a compound having a maximum absorption wavelength in the range of 500 nm or more and less than 580 nm in the region of 350 nm or more and 700 nm or less;
7. The resin composition according to claim 5, comprising a compound having a maximum absorption wavelength in the range of 580 nm to 700 nm in the range of 350 nm to 700 nm.
[8] The above [5] to [7], wherein the total mass of all chlorine atoms and all bromine atoms contained in the resin composition is 150 mass ppm or less with respect to the total mass of the solid content of the resin composition. The resin composition according to any one of.
[9] The resin composition according to any one of [5] to [8] above, further comprising (B) a photosensitive compound.
[10] The resin composition according to [9] above, wherein the photosensitive compound (B) contains a quinonediazide compound.
[11] The quinonediazide compound contains a compound in which sulfonic acid of quinonediazide is ester-bonded to the hydroxy groups of the polyhydroxy compound, and 100 mol% of the hydroxy groups are ester-bonded to the sulfonic acid of quinonediazide. The resin composition according to [10] above, wherein the proportion of hydroxy groups is 50 mol% or more and 90 mol% or less.
[12] The resin composition according to any one of [5] to [11] above, further comprising (C) a thermochromic compound.
[13] The above [ 12].
[14] The (C) thermochromogenic compound contains an aromatic hydrocarbon compound having at least one aromatic C—H bond and at least three phenolic hydroxyl groups in one aromatic ring, and further has the formula ( The resin composition according to [12] or [13] above, which contains a triazine ring-containing compound represented by 4).
Figure JPOXMLDOC01-appb-C000008
Figure JPOXMLDOC01-appb-C000008
(式(4)中、R50~R55はそれぞれ独立に、水素原子、炭素原子数1~10のアルキル基、炭素原子数2~10のアルケニル基、炭素原子数2~10のアルケニルエーテル基、メチロール基、アルコキシメチル基を表す。ただし、R50~R55のうち、少なくとも1つはメチロール基またはアルコキシメチル基である。)
[15]前記(A)アルカリ可溶性樹脂が、ポリイミド、ポリイミド前駆体、ポリベンゾオキサゾール、ポリベンゾオキサゾール前駆体及びそれらの共重合体からなる群より選択される一種類以上を含有する、上記[5]~[14]のいずれかに記載の樹脂組成物。
[16]有機EL表示装置の画素分割層の形成に用いられる、上記[5]~[15]のいずれかに記載の樹脂組成物。
[17]上記[5]~[16]のいずれかに記載の樹脂組成物を硬化した硬化物。
[18]上記[1]~[4]のいずれかに記載の化合物を含有する、硬化物。
[19]上記[17]又は[18]に記載の硬化物を具備する表示装置。
(In formula (4), R 50 to R 55 are each independently a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkenyl ether group having 2 to 10 carbon atoms , a methylol group, and an alkoxymethyl group, provided that at least one of R 50 to R 55 is a methylol group or an alkoxymethyl group.)
[15] The above [5], wherein the (A) alkali-soluble resin contains one or more selected from the group consisting of polyimides, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, and copolymers thereof. ] The resin composition according to any one of [14].
[16] The resin composition according to any one of [5] to [15] above, which is used for forming a pixel division layer of an organic EL display device.
[17] A cured product obtained by curing the resin composition according to any one of [5] to [16] above.
[18] A cured product containing the compound according to any one of [1] to [4] above.
[19] A display device comprising the cured product according to [17] or [18] above.
 本発明の化合物を用いることにより、アルカリ現像の際の残膜率が高い樹脂組成物を得ることができる。 By using the compound of the present invention, it is possible to obtain a resin composition having a high residual film rate during alkali development.
有機EL表示装置に使用した基板の概略図である。1 is a schematic diagram of a substrate used in an organic EL display device; FIG.
 以下、本発明を詳細に説明する。 The present invention will be described in detail below.
 本発明の化合物は、式(1)で表される化合物である。式(1)で表される化合物は、An-で表されるアニオン部と、(Rで表されるカチオン部とからなる。 The compound of the present invention is a compound represented by formula (1). The compound represented by formula (1) consists of an anion portion represented by A n- and a cation portion represented by (R 1 R 2 R 3 R 4 N + ) n .
 式(1)中、An-は、前記式(2)又は式(3)で表されるn価のアニオンである。 In formula (1), A n- is an n-valent anion represented by formula (2) or formula (3).
 式(2)中、R~Rは、それぞれ独立に、水素原子又は置換基を有してもよい炭素数1~10の1価の炭化水素基を表す。R~R14は、それぞれ独立に、水素原子又は炭素数1~5の1価の炭化水素基を表す。R15~R18は、それぞれ独立に、水素原子、ハロゲン原子、-SOH、-SO 、-SONR1920、-COOH、-COO、-COOR21、-CONR2223、-OR24、-NR2526又は置換基を有していてもよい炭素原子数1~20の1価の炭化水素基を表す。R19~R26は、それぞれ独立に、水素原子又は置換基を有してもよい炭素原子数1~20の1価の炭化水素基を表す。 In formula (2), R 5 to R 8 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms which may have a substituent. R 9 to R 14 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 5 carbon atoms. R 15 to R 18 each independently represent a hydrogen atom, a halogen atom, —SO 3 H, —SO 3 , —SO 3 NR 19 R 20 , —COOH, —COO , —COOR 21 , —CONR 22 R 23 , —OR 24 , —NR 25 R 26 or an optionally substituted monovalent hydrocarbon group having 1 to 20 carbon atoms; R 19 to R 26 each independently represent a hydrogen atom or an optionally substituted monovalent hydrocarbon group having 1 to 20 carbon atoms.
 ここで、前記置換基を有してもよい炭素数1~10の1価の炭化水素基又は置換基を有してもよい炭素原子数1~20の1価の炭化水素基が有してもよい置換基としては、ハロゲン原子、水酸基、アルコキシ基、フェノキシ基、カルボキシル基、スルホ基、アシル基、アミノ基、イミノ基、アミド基、イミド基、ニトロ基、シアノ基、-SO 、-COOなどの公知の置換基が挙げられる。 Here, the optionally substituted monovalent hydrocarbon group having 1 to 10 carbon atoms or the optionally substituted monovalent hydrocarbon group having 1 to 20 carbon atoms has Substituents that may be used include halogen atoms, hydroxyl groups, alkoxy groups, phenoxy groups, carboxyl groups, sulfo groups, acyl groups, amino groups, imino groups, amide groups, imido groups, nitro groups, cyano groups, —SO 3 , Known substituents such as —COO can be mentioned.
 式(2)中、R~RおよびR15~R18のうち、少なくとも1つは、-SO 若しくは-COOを有する炭素数1~10の1価の炭化水素基、-SO 又は-COOである。Xは-SO 又は-COOを表す。これらを満たすことで、式(2)で表される構造がアニオンとなる。 In formula (2), at least one of R 5 to R 8 and R 15 to R 18 is a monovalent hydrocarbon group having 1 to 10 carbon atoms having —SO 3 or —COO , —SO 3 - or -COO - . X represents -SO 3 - or -COO - . By satisfying these conditions, the structure represented by formula (2) becomes an anion.
 このようなアニオンとしては、C.I.アシッドレッド50、52、289;C.I.アシッドバイオレット9,30などのキサンテン系酸性染料のアニオン部などが挙げられる。 As such anions, C.I. I. Acid Red 50, 52, 289; C.I. I. Examples include the anion portion of xanthene-based acid dyes such as Acid Violet 9 and 30.
 式(3)において、R27~R30はそれぞれ独立に、水素原子又は置換基を有してもよい炭素数1~20の1価の炭化水素基を表す。R31~R36は、それぞれ独立に水素原子又は炭素数1~5の1価の炭化水素基を表す。R37~R41は、それぞれ独立に、水素原子、ハロゲン原子、-SOH、-SO 、-SONR4243、-COOH、-COO、-COOR44、-CONR4546、-OR47、-NR4849又は置換基を有していてもよい炭素原子数1~20の1価の炭化水素基を表す。R37~R41のうち、互いに隣接するもの同士は、互いに結合し、環状構造を形成してもよい。R42~R49は、それぞれ独立に、水素原子又は置換基を有してもよい炭素原子数1~20の1価の炭化水素基を表す。 In formula (3), R 27 to R 30 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms which may have a substituent. R 31 to R 36 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 5 carbon atoms. R 37 to R 41 are each independently a hydrogen atom, a halogen atom, —SO 3 H, —SO 3 , —SO 3 NR 42 R 43 , —COOH, —COO , —COOR 44 , —CONR 45 R 46 , -OR 47 , -NR 48 R 49 or an optionally substituted monovalent hydrocarbon group having 1 to 20 carbon atoms; Adjacent ones among R 37 to R 41 may be bonded to each other to form a cyclic structure. R 42 to R 49 each independently represent a hydrogen atom or an optionally substituted monovalent hydrocarbon group having 1 to 20 carbon atoms.
 ここで、R37~R41のうち、互いに隣接するもの同士というのは、ある基に着目したときに、その置換基のオルト位に存在する基のことを指す。例えば、R38においては、R37またはR39が、R38と互いに隣接するものに該当する。 Here, among R 37 to R 41 , mutually adjacent ones refer to groups existing at the ortho position of a substituent when a given group is focused on. For example, in R 38 , R 37 or R 39 corresponds to R 38 and R 38 adjacent to each other.
 ここで、前記置換基を有してもよい炭素数1~20の1価の炭化水素基が有してもよい置換基としては、前述のような置換基が挙げられる。 Here, examples of the substituents that the monovalent hydrocarbon group having 1 to 20 carbon atoms that may have a substituent may have include the substituents described above.
 R27~R30およびR37~R41のうち、少なくとも2つは-SO 若しくは-COOを有する炭素数1~20の1価の炭化水素基、-SO 又は-COOである。これを満たすことで、式(3)で表される構造がアニオンとなる。 At least two of R 27 to R 30 and R 37 to R 41 are monovalent hydrocarbon groups having 1 to 20 carbon atoms having -SO 3 - or -COO- , -SO 3 - or -COO- be. By satisfying this, the structure represented by Formula (3) becomes an anion.
 このようなアニオンとしては、C.I.アシッドバイオレット15、17、19、21、38、49、72;C.I.アシッドブルー1、3、7、9、15、22、83、90、93、104,108、147;C.I.アシッドグリーン3、5、6、8、9、16、50;C.I.フードグリーン3等のトリアリールメタン系酸性染料のアニオン部などが挙げられる。 As such anions, C.I. I. Acid Violet 15, 17, 19, 21, 38, 49, 72; C.I. I. Acid Blue 1, 3, 7, 9, 15, 22, 83, 90, 93, 104, 108, 147; C.I. I. Acid Green 3, 5, 6, 8, 9, 16, 50; C.I. I. The anion portion of triarylmethane-based acid dyes such as Food Green 3 and the like can be mentioned.
 カチオン部における、R~Rはそれぞれ独立して、炭素数5~10のアルキル基である。すなわち、カチオン部は、それぞれ異なってもよい炭素数5~10のアルキル基を4つ有する第四級アンモニウムカチオンである。式(1)において、R、R、RおよびRのすべてが同一の置換基であることが好ましい。すなわち、カチオン部が、同一の炭素数5~10のアルキル基を4つ有する第四級アンモニウムカチオンであることが好ましい。R~Rがすべて同一の置換基であると、後述する、本発明の化合物を含有する樹脂組成物からなる硬化物を画素分割層として有する有機EL表示装置の信頼性を向上させることができる。このような炭素数5~10のアルキル基を4つ有するアンモニウムカチオンとしては、テトラペンチルアンモニウムカチオン、テトラヘキシルアンモニウムカチオン、テトラオクチルアンモニウムカチオン、テトラデシルアンモニウムカチオン、などが挙げられる。中でも、式(1)中のR、R、RおよびRのすべてが、炭素数5又は6のアルキル基であることが好ましく、テトラペンチルアンモニウムカチオン(炭素数5)、テトラヘキシルアンモニウムカチオン(炭素数6)の構造を有することが好ましい。 R 1 to R 4 in the cation moiety are each independently an alkyl group having 5 to 10 carbon atoms. That is, the cation moiety is a quaternary ammonium cation having four alkyl groups each having 5 to 10 carbon atoms, each of which may be different. In formula (1), all of R 1 , R 2 , R 3 and R 4 are preferably the same substituent. That is, the cation moiety is preferably a quaternary ammonium cation having four identical alkyl groups of 5 to 10 carbon atoms. When all of R 1 to R 4 are the same substituent, it is possible to improve the reliability of an organic EL display device having, as a pixel dividing layer, a cured product made of a resin composition containing the compound of the present invention, which will be described later. can. Examples of ammonium cations having four alkyl groups having 5 to 10 carbon atoms include tetrapentylammonium cations, tetrahexylammonium cations, tetraoctylammonium cations, tetradecylammonium cations, and the like. Among them, all of R 1 , R 2 , R 3 and R 4 in formula (1) are preferably alkyl groups having 5 or 6 carbon atoms, such as tetrapentylammonium cation (5 carbon atoms), tetrahexylammonium It preferably has a cation (6 carbon atoms) structure.
 式(1)で表される化合物は、例えば、式(2)又は式(3)で表されるアニオンを含む塩(以下、アニオン成分)の水溶液と、前記第四級アンモニウムカチオンを含む塩(以下、カチオン成分)の水溶液をそれぞれ調製し、両者を撹拌しながら混合することで、析出物として該化合物が生成する。ここで、アニオン成分に含まれる対カチオンは特に制限されず、例えば、ナトリウムカチオンやカリウムカチオンなどが挙げられる。また、カチオン成分に含まれる対アニオンは特に限定されず、塩化物アニオンや臭化物アニオンなどが挙げられる。生成した析出物をろ過により回収することにより、式(1)で表される化合物を得ることができる。得られた式(1)で表される化合物は、60~70℃程度で乾燥することが好ましい。 The compound represented by formula (1) is, for example, an aqueous solution of a salt containing an anion represented by formula (2) or formula (3) (hereinafter referred to as an anion component) and a salt containing the quaternary ammonium cation ( By preparing aqueous solutions of each component (hereinafter referred to as a cation component) and mixing the two with stirring, the compound is produced as a precipitate. Here, the counter cation contained in the anion component is not particularly limited, and examples thereof include sodium cations and potassium cations. Moreover, the counter anion contained in the cation component is not particularly limited, and examples thereof include chloride anions and bromide anions. The compound represented by the formula (1) can be obtained by collecting the generated precipitate by filtration. The obtained compound represented by formula (1) is preferably dried at about 60 to 70°C.
 式(1)で表される化合物は、公知の方法で同定することができる。例えば、式(1)で表される化合物の水素核磁気共鳴(H NMR)スペクトルは、該化合物を構成するアニオンとカチオンに由来するピークの重ね合わせとなる。これらのピークは、アニオン成分とカチオン成分それぞれの1H NMRスペクトルと比較することで判別できる。中でも、炭素数5~10のアルキル基を4つ有する第四級アンモニウムカチオンのアルキル末端(CH)に由来するトリプレットピークは、化学シフト値(δ)0.5~1.0の領域に現れる。特に、式(1)で表される化合物が同一のアルキル基を4つ有する場合、該ピークは単一のトリプレットピークとなり、かつ積分値は12×nとなる。 A compound represented by formula (1) can be identified by a known method. For example, the hydrogen nuclear magnetic resonance ( 1 H NMR) spectrum of the compound represented by Formula (1) is a superposition of peaks derived from anions and cations that constitute the compound. These peaks can be distinguished by comparing the 1H NMR spectra of the anionic and cationic components, respectively. Among them, the triplet peak derived from the alkyl terminal (CH 3 ) of the quaternary ammonium cation having four alkyl groups with 5 to 10 carbon atoms appears in the chemical shift value (δ) region of 0.5 to 1.0. . In particular, when the compound represented by formula (1) has four identical alkyl groups, the peak becomes a single triplet peak and the integrated value is 12×n.
 本発明の化合物は、350nm以上700nm以下の領域における最大吸収波長が、500nm以上700nm以下の領域のいずれかに存在することが好ましい。本発明の化合物の最大吸収波長がこの範囲にあることで、後述する、本発明の化合物を含有する感光性樹脂組成物の感度を向上させることができる。 The compound of the present invention preferably has a maximum absorption wavelength in the range of 350 nm or more and 700 nm or less in any of the range of 500 nm or more and 700 nm or less. When the maximum absorption wavelength of the compound of the present invention is within this range, the sensitivity of the photosensitive resin composition containing the compound of the present invention, which will be described later, can be improved.
 本発明の樹脂組成物は、本発明の化合物と、(A)アルカリ可溶性樹脂を含有する。 The resin composition of the present invention contains the compound of the present invention and (A) an alkali-soluble resin.
 樹脂組成物における、式(1)で表される化合物の含有量は、(A)アルカリ可溶性樹脂の100質量部に対して、10~75質量部が好ましく、20~50質量部がより好ましい。式(1)で表される化合物の含有量が10質量部以上とすることで、対応する波長の光を十分に吸収させることができる。また、75質量部以下とすることで、開口部残渣を低減させることができる。 The content of the compound represented by formula (1) in the resin composition is preferably 10 to 75 parts by mass, more preferably 20 to 50 parts by mass, relative to 100 parts by mass of the alkali-soluble resin (A). When the content of the compound represented by Formula (1) is 10 parts by mass or more, the light of the corresponding wavelength can be sufficiently absorbed. Further, by setting the amount to 75 parts by mass or less, it is possible to reduce the residue at the opening.
 本発明の樹脂組成物において、有機カチオン種の総質量に占める、前記式(1)中のアンモニウムカチオン種の質量の割合は、50質量%以上100質量%以下であることが好ましい。アンモニウムカチオン種の質量の割合がこの範囲にあることで、本発明の樹脂組成物の冷凍保管時の保存安定性を高めることができる。有機カチオン種の総質量、およびアンモニウムカチオン種の質量の割合は、陽イオンクロマトグラフィーにより求めることができる。 In the resin composition of the present invention, the mass ratio of the ammonium cation species in the formula (1) to the total mass of the organic cation species is preferably 50% by mass or more and 100% by mass or less. When the mass ratio of the ammonium cation species is within this range, the storage stability of the resin composition of the present invention during frozen storage can be enhanced. The total mass of organic cationic species and the percentage mass of ammonium cationic species can be determined by cation chromatography.
 本発明の樹脂組成物において、式(1)で表される化合物は、350nm以上700nm以下の領域において、500nm以上580nm未満の範囲に極大吸収波長を有する化合物と、350nm以上700nm以下の領域において、580nm以上700nm以下の範囲に極大吸収波長を有する化合物を含有することが好ましい。これらの化合物を含有することで、硬化物において、可視光領域の広い範囲で透過率を下げることができる。さらに、必要に応じて、後述する(C)熱発色性化合物併用することで、硬化物を黒色とすることができる。 In the resin composition of the present invention, the compound represented by formula (1) is a compound having a maximum absorption wavelength in the range of 500 nm or more and less than 580 nm in the range of 350 nm or more and 700 nm or less, and a compound having a maximum absorption wavelength in the range of 350 nm or more and 700 nm or less It is preferable to contain a compound having a maximum absorption wavelength in the range of 580 nm or more and 700 nm or less. By containing these compounds, the transmittance of the cured product can be reduced over a wide range of the visible light region. Furthermore, if necessary, the cured product can be made black by using (C) a thermochromic compound described later in combination.
 350nm以上700nm以下の領域において、500nm以上580nm未満の範囲に極大吸収波長を有する、式(1)で表される化合物としては、例えば、C.I.アシッドレッド52、289のアニオン部を有する化合物などが挙げられる。また、350nm以上700nm以下の領域において、580nm以上700nm以下の範囲に極大吸収波長を有する、式(1)で表される化合物としては、例えば、C.I.アシッドブルー83、90のアニオン部を有する化合物などが挙げられる。 Examples of compounds represented by formula (1) having a maximum absorption wavelength in the range of 500 nm or more and less than 580 nm in the region of 350 nm or more and 700 nm or less include C.I. I. Compounds having an anion moiety of Acid Red 52,289 and the like can be mentioned. Examples of the compound represented by formula (1) having a maximum absorption wavelength in the range of 580 nm to 700 nm in the range of 350 nm to 700 nm include C.I. I. Compounds having an anion portion of Acid Blue 83 and 90 are included.
 本発明の樹脂組成物において、樹脂組成物中に含まれる全塩素原子と全臭素原子の総質量は、樹脂組成物中の固形分の総質量に対して、150質量ppm以下であることが好ましく、100質量ppm以下であることがより好ましく、燃焼イオンクロマトグラフィーの検出下限である2質量ppm未満であることがさらに好ましい。樹脂組成物中に含まれる全塩素原子と全臭素原子の総量を樹脂組成物の固形分に対して、150質量ppm以下とすることで、樹脂組成物を硬化した硬化物を有する有機EL表示装置の電極や発光層の劣化を抑制し、長期信頼性を向上させることができる。樹脂組成物中に含まれる全塩素原子と全臭素原子の総質量は、例えば樹脂組成物を分析装置の燃焼管内で燃焼させ、発生したガスを溶液に吸収後、吸収液の一部をイオンクロマトグラフィーにて分析を行う燃焼イオンクロマトグラフィーにより測定できる。 In the resin composition of the present invention, the total mass of all chlorine atoms and all bromine atoms contained in the resin composition is preferably 150 mass ppm or less with respect to the total mass of solids in the resin composition. , 100 ppm by mass or less, and more preferably less than 2 ppm by mass, which is the detection limit of combustion ion chromatography. An organic EL display device having a cured product obtained by curing the resin composition by setting the total amount of all chlorine atoms and all bromine atoms contained in the resin composition to 150 mass ppm or less with respect to the solid content of the resin composition. deterioration of the electrodes and the light-emitting layer can be suppressed, and long-term reliability can be improved. The total mass of all chlorine atoms and all bromine atoms contained in the resin composition can be determined, for example, by burning the resin composition in a combustion tube of an analyzer, absorbing the generated gas into a solution, and subjecting a part of the absorption liquid to ion chromatography. It can be determined by combustion ion chromatography with graphical analysis.
 <(A)アルカリ可溶性樹脂>
 本発明の樹脂組成物は、(A)アルカリ可溶性樹脂を含有する。アルカリ可溶性樹脂とは、以下に定義する溶解速度が50nm/分以上である樹脂をいう。詳細には、γ-ブチロラクトンに樹脂を溶解した溶液をシリコンウエハ上に塗布し、120℃で4分間プリベークを行って膜厚10μm±0.5μmのプリベーク膜を形成し、前記プリベーク膜を23±1℃の2.38質量%テトラメチルアンモニウムヒドロキシド水溶液に1分間浸漬した後、純水でリンス処理したときの膜厚減少から求められる溶解速度が50nm/分以上である樹脂をいう。
<(A) Alkali-soluble resin>
The resin composition of the present invention contains (A) an alkali-soluble resin. An alkali-soluble resin is a resin having a dissolution rate of 50 nm/min or more as defined below. More specifically, a silicon wafer is coated with a solution obtained by dissolving a resin in γ-butyrolactone, and prebaked at 120° C. for 4 minutes to form a prebaked film having a film thickness of 10 μm±0.5 μm. A resin having a dissolution rate of 50 nm/min or more, which is obtained from the film thickness reduction when immersed in a 2.38% by mass tetramethylammonium hydroxide aqueous solution at 1° C. for 1 minute and then rinsed with pure water.
 (A)アルカリ可溶性樹脂は、アルカリ可溶性を付与するため、樹脂の構造単位中及び/又はその主鎖末端に酸性基を有することが好ましい。好ましい酸性基としてはカルボキシル基、水酸基、スルホン酸基、及びチオール基などが挙げられる。 (A) The alkali-soluble resin preferably has an acidic group in the structural unit of the resin and/or at the end of its main chain in order to impart alkali solubility. Preferred acidic groups include carboxyl groups, hydroxyl groups, sulfonic acid groups, and thiol groups.
 (A)アルカリ可溶性樹脂として具体的には、ポリイミド、ポリイミド前駆体、ポリベンゾオキサゾール、ポリベンゾオキサゾール前駆体、フェノール樹脂、アルカリ可溶性基を有するラジカル重合性モノマーからなる重合体、シロキサンポリマー、環状オレフィン重合体、及びカルド樹脂などが挙げられる。(A)アルカリ可溶性樹脂は、これらの樹脂を2種類以上含有してもよい。(A)アルカリ可溶性樹脂は、耐熱性が高いものを含有することが好ましい。加えて、有機発光装置、表示装置、半導体素子に用いられる平坦化膜、画素分割層、隔壁、及び保護膜として優れた特性を得るべく、(A)アルカリ可溶性樹脂は、熱処理後の200℃以上の高温下におけるアウトガス量が少ないものを含有することが好ましい。具体的には、(A)アルカリ可溶性樹脂は、ポリイミド、ポリイミド前駆体、ポリベンゾオキサゾール、ポリベンゾオキサゾール前駆体及びそれらの共重合体からなる群より選択される一種類以上を含有することが好ましい。 (A) Specific examples of alkali-soluble resins include polyimides, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, phenolic resins, polymers composed of radically polymerizable monomers having alkali-soluble groups, siloxane polymers, and cyclic olefins. Polymers, cardo resins, and the like. (A) The alkali-soluble resin may contain two or more of these resins. (A) Alkali-soluble resin preferably contains one having high heat resistance. In addition, in order to obtain excellent properties as a flattening film, a pixel dividing layer, a partition wall, and a protective film used in organic light-emitting devices, display devices, and semiconductor elements, (A) the alkali-soluble resin has a temperature of 200° C. or higher after heat treatment. It is preferable to contain a material with a small amount of outgassing at a high temperature of . Specifically, (A) the alkali-soluble resin preferably contains one or more selected from the group consisting of polyimides, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, and copolymers thereof. .
 ポリイミド、ポリイミド前駆体、ポリベンゾオキサゾール、ポリベンゾオキサゾール前駆体及びそれらの共重合体について説明する。ポリイミドの場合はイミド環を有するものであれば、ポリベンゾオキサゾールの場合はベンゾオキサゾール環を有するものであれば、特に限定されない。またポリイミド前駆体は、脱水閉環することによりイミド環を有するポリイミドとなる構造を有していれば、特に限定されず、ポリベンゾオキサゾール前駆体も、脱水閉環することによりベンゾオキサゾール環を有するポリベンゾオキサゾールとなる構造を有していれば、特に限定されない。 Polyimides, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, and their copolymers will be explained. Polyimide is not particularly limited as long as it has an imide ring, and polybenzoxazole is not particularly limited as long as it has a benzoxazole ring. The polyimide precursor is not particularly limited as long as it has a structure that becomes a polyimide having an imide ring by dehydration and ring closure. It is not particularly limited as long as it has a structure that becomes oxazole.
 (A)アルカリ可溶性樹脂としてより好ましく用いられるものとしては、ポリイミド、ポリイミド前駆体、ポリベンゾオキサゾール、及びポリベンゾオキサゾール前駆体が挙げられる。 (A) Polyimides, polyimide precursors, polybenzoxazoles, and polybenzoxazole precursors are more preferably used as the alkali-soluble resin.
 ポリイミドは式(5)で表される構造単位を有する。 A polyimide has a structural unit represented by formula (5).
Figure JPOXMLDOC01-appb-C000009
Figure JPOXMLDOC01-appb-C000009
式(5)中、R56は4~10価の有機基、R57は2~10価の有機基を表す。R58及びR59はそれぞれ独立して、水酸基、カルボキシ基、スルホン酸基、チオール基又は式(6)もしくは式(7)で表される置換基を表す。pは0~6の整数を表し、qは0~8の整数を表し、p+q>0である。 In formula (5), R 56 represents a 4- to 10-valent organic group, and R 57 represents a 2- to 10-valent organic group. R 58 and R 59 each independently represent a hydroxyl group, a carboxy group, a sulfonic acid group, a thiol group, or a substituent represented by formula (6) or formula (7). p represents an integer of 0 to 6, q represents an integer of 0 to 8, and p+q>0.
Figure JPOXMLDOC01-appb-C000010
Figure JPOXMLDOC01-appb-C000010
 式(6)及び式(7)において、R60~R62は、それぞれ独立して、水素原子、炭素数1~10のアルキル基、炭素数2~6のアシル基又は炭素数6~15のアリール基を表す。上記のアルキル基、アシル基及びアリール基は、無置換体又は置換体のいずれであっても構わない。 In formulas (6) and (7), R 60 to R 62 each independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an acyl group having 2 to 6 carbon atoms, or represents an aryl group. The above alkyl group, acyl group and aryl group may be unsubstituted or substituted.
 ポリイミド前駆体は式(8)で表される構造単位を有する。 A polyimide precursor has a structural unit represented by formula (8).
Figure JPOXMLDOC01-appb-C000011
Figure JPOXMLDOC01-appb-C000011
 式(8)中、R63は4~10価の有機基、R64は2~10価の有機基を表す。R65は前記式(6)又は式(7)で表される置換基を表し、R66は水酸基、スルホン酸基、チオール基を表し、R67は水酸基、スルホン酸基、チオール基又は式(6)もしくは式(7)で表される置換基を表す。rは2~8の整数を表し、sは0~6の整数を表し、tは0~8の整数を表し、2≦r+s≦8である。 In formula (8), R 63 represents a 4- to 10-valent organic group, and R 64 represents a 2- to 10-valent organic group. R 65 represents a substituent represented by the formula (6) or formula (7), R 66 represents a hydroxyl group, a sulfonic acid group, or a thiol group, R 67 represents a hydroxyl group, a sulfonic acid group, a thiol group, or the formula ( 6) or a substituent represented by formula (7); r represents an integer of 2 to 8, s represents an integer of 0 to 6, t represents an integer of 0 to 8, and 2≦r+s≦8.
 ポリベンゾオキサゾールは式(9)で表される構造単位を有する。 Polybenzoxazole has a structural unit represented by formula (9).
Figure JPOXMLDOC01-appb-C000012
Figure JPOXMLDOC01-appb-C000012
 式(9)中、R68は2~10価の有機基、R69は芳香族構造を有する4~10価の有機基を表す。R70及びR71はそれぞれ独立して、水酸基、カルボキシ基、スルホン酸基、チオール基又は式(6)もしくは式(7)で表される置換基を表す。uは0~8の整数を表し、vは0~6の整数を表し、u+v>0である。 In formula (9), R 68 represents a divalent to 10-valent organic group, and R 69 represents a 4- to 10-valent organic group having an aromatic structure. R 70 and R 71 each independently represent a hydroxyl group, a carboxy group, a sulfonic acid group, a thiol group, or a substituent represented by formula (6) or formula (7). u represents an integer from 0 to 8, v represents an integer from 0 to 6, and u+v>0.
 ポリベンゾオキサゾール前駆体は式(10)で表される構造単位を有する。 A polybenzoxazole precursor has a structural unit represented by formula (10).
Figure JPOXMLDOC01-appb-C000013
Figure JPOXMLDOC01-appb-C000013
 式(10)中、R72は芳香族構造を有する2~10価の有機基、R73は4~10価の有機基を表す。R74はスルホン酸基、チオール基又は式(6)もしくは式(7)で表される置換基を表し、R75は水酸基、カルボキシ基、スルホン酸基、チオール基又は式(6)もしくは式(7)で表される置換基を表す。wは2~8の整数を表し、xは0~8の整数を表し、yは0~6の整数を表し、2≦w+y≦8である。 In formula (10), R 72 represents a divalent to 10-valent organic group having an aromatic structure, and R 73 represents a 4- to 10-valent organic group. R 74 represents a sulfonic acid group, a thiol group or a substituent represented by formula (6) or formula (7), R 75 represents a hydroxyl group, carboxy group, sulfonic acid group, thiol group or formula (6) or formula ( represents a substituent represented by 7); w represents an integer of 2 to 8, x represents an integer of 0 to 8, y represents an integer of 0 to 6, and 2≦w+y≦8.
 ポリイミド、ポリイミド前駆体、ポリベンゾオキサゾール、ポリベンゾオキサゾール前駆体及びそれらの共重合体からなる群より選択される1種以上は、上記式(5)、式(8)、式(9)又は式(10)で表される構造単位を5~100,000個有することが好ましい。また、ポリイミド、ポリイミド前駆体、ポリベンゾオキサゾール、ポリベンゾオキサゾール前駆体及びそれらの共重合体からなる群より選択される1種以上は、上記式(5)、式(8)、式(9)又は式(10)で表される構造単位に加えて、他の構造単位を有してもよい。この場合、ポリイミド、ポリイミド前駆体、ポリベンゾオキサゾール、ポリベンゾオキサゾール前駆体及びそれらの共重合体からなる群より選択される1種以上は、上記式(5)、式(8)、式(9)又は式(10)で表される構造単位を、全構造単位数のうち50モル%以上有することが好ましく、70モル%以上有することがより好ましい。 At least one selected from the group consisting of polyimides, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, and copolymers thereof is the above formula (5), formula (8), formula (9) or formula It preferably has 5 to 100,000 structural units represented by (10). Further, one or more selected from the group consisting of polyimides, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, and copolymers thereof is the above formula (5), formula (8), formula (9) Alternatively, it may have other structural units in addition to the structural units represented by formula (10). In this case, at least one selected from the group consisting of polyimides, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, and copolymers thereof is the above formula (5), formula (8), formula (9) ) or formula (10) in an amount of 50 mol % or more, more preferably 70 mol % or more of the total number of structural units.
 式(5)中のR56-(R58、及び式(8)中の(R65-R63-(R66はテトラカルボン酸の残基又はその誘導体の残基を表す。テトラカルボン酸誘導体の残基としては、テトラカルボン酸二無水物、テトラカルボン酸二塩化物又はテトラカルボン酸活性ジエステルの残基などが挙げられる。 R 56 -(R 58 ) p in formula (5) and (R 65 ) r -R 63 -(R 66 ) s in formula (8) are residues of tetracarboxylic acid or derivatives thereof. show. Residues of tetracarboxylic acid derivatives include residues of tetracarboxylic dianhydrides, tetracarboxylic acid dichlorides, and tetracarboxylic acid active diesters.
 テトラカルボン酸の残基又はその誘導体の残基の例としては、ピロメリット酸、3,3’,4,4’-ビフェニルテトラカルボン酸、2,3,3’,4’-ビフェニルテトラカルボン酸、2,2’,3,3’-ビフェニルテトラカルボン酸、3,3’,4,4’-ベンゾフェノンテトラカルボン酸、2,2’,3,3’-ベンゾフェノンテトラカルボン酸、2,2-ビス(3,4-ジカルボキシフェニル)ヘキサフルオロプロパン、2,2-ビス(2,3-ジカルボキシフェニル)ヘキサフルオロプロパン、1,1-ビス(3,4-ジカルボキシフェニル)エタン、1,1-ビス(2,3-ジカルボキシフェニル)エタン、ビス(3,4-ジカルボキシフェニル)メタン、ビス(2,3-ジカルボキシフェニル)メタン、ビス(3,4-ジカルボキシフェニル)エーテル、1,2,5,6-ナフタレンテトラカルボン酸、2,3,6,7-ナフタレンテトラカルボン酸、2,3,5,6-ピリジンテトラカルボン酸、3,4,9,10-ペリレンテトラカルボン酸及び下記に示した構造の芳香族テトラカルボン酸や、ブタンテトラカルボン酸、1,2,3,4-シクロペンタンテトラカルボン酸などの脂肪族のテトラカルボン酸、又は、それらのテトラカルボン酸二無水物、テトラカルボン酸二塩化物若しくはテトラカルボン酸活性ジエステルなどの残基が挙げられる。 Examples of residues of tetracarboxylic acids or derivatives thereof include pyromellitic acid, 3,3′,4,4′-biphenyltetracarboxylic acid, 2,3,3′,4′-biphenyltetracarboxylic acid. , 2,2′,3,3′-biphenyltetracarboxylic acid, 3,3′,4,4′-benzophenonetetracarboxylic acid, 2,2′,3,3′-benzophenonetetracarboxylic acid, 2,2- bis(3,4-dicarboxyphenyl)hexafluoropropane, 2,2-bis(2,3-dicarboxyphenyl)hexafluoropropane, 1,1-bis(3,4-dicarboxyphenyl)ethane, 1, 1-bis(2,3-dicarboxyphenyl)ethane, bis(3,4-dicarboxyphenyl)methane, bis(2,3-dicarboxyphenyl)methane, bis(3,4-dicarboxyphenyl)ether, 1,2,5,6-naphthalenetetracarboxylic acid, 2,3,6,7-naphthalenetetracarboxylic acid, 2,3,5,6-pyridinetetracarboxylic acid, 3,4,9,10-perylenetetracarboxylic acid Acids and aromatic tetracarboxylic acids having the structures shown below, aliphatic tetracarboxylic acids such as butanetetracarboxylic acid and 1,2,3,4-cyclopentanetetracarboxylic acid, or their tetracarboxylic acid di Examples include residues such as anhydrides, tetracarboxylic acid dichlorides or tetracarboxylic acid activated diesters.
Figure JPOXMLDOC01-appb-C000014
Figure JPOXMLDOC01-appb-C000014
 式中、R76は酸素原子、C(CF、又はC(CHを表す。R77及びR78はそれぞれ独立に水素原子、又は水酸基を表す。 In the formula, R 76 represents an oxygen atom, C(CF 3 ) 2 or C(CH 3 ) 2 . R77 and R78 each independently represent a hydrogen atom or a hydroxyl group.
 上記式(9)中のR68-(R70、及び式(10)中のR72-(R74はジカルボン酸の残基又はその誘導体の残基を表す。ジカルボン酸誘導体の残基としては、ジカルボン酸無水物、ジカルボン酸塩化物、ジカルボン酸活性エステル、トリカルボン酸無水物、トリカルボン酸塩化物、トリカルボン酸活性エステル、ジホルミル化合物の残基が挙げられる。 R 68 -(R 70 ) u in the formula (9) and R 72 -(R 74 ) x in the formula (10) each represent a residue of a dicarboxylic acid or a derivative thereof. Residues of dicarboxylic acid derivatives include residues of dicarboxylic anhydrides, dicarboxylic acid chlorides, dicarboxylic acid active esters, tricarboxylic acid anhydrides, tricarboxylic acid chlorides, tricarboxylic acid active esters, and diformyl compounds.
 ジカルボン酸の残基又はその誘導体の残基の例としては、テレフタル酸、イソフタル酸、ジフェニルエーテルジカルボン酸、ビス(カルボキシフェニル)ヘキサフルオロプロパン、ビフェニルジカルボン酸、ベンゾフェノンジカルボン酸、トリフェニルジカルボン酸など、又は、それらのジカルボン酸無水物、ジカルボン酸塩化物、ジカルボン酸活性エステルなどの残基が挙げられる。また、トリカルボン酸の残基又はその誘導体の残基の例としては、トリメリット酸、トリメシン酸、ジフェニルエーテルトリカルボン酸、ビフェニルトリカルボン酸など、又は、それらのトリカルボン酸無水物、トリカルボン酸塩化物、トリカルボン酸活性エステルなどの残基が挙げられる。 Examples of dicarboxylic acid residues or residues of derivatives thereof include terephthalic acid, isophthalic acid, diphenyletherdicarboxylic acid, bis(carboxyphenyl)hexafluoropropane, biphenyldicarboxylic acid, benzophenonedicarboxylic acid, triphenyldicarboxylic acid, etc., or , their dicarboxylic acid anhydrides, dicarboxylic acid chlorides, dicarboxylic acid active esters, and the like. Examples of tricarboxylic acid residues or residues of derivatives thereof include trimellitic acid, trimesic acid, diphenylethertricarboxylic acid, biphenyltricarboxylic acid, etc., or tricarboxylic acid anhydrides, tricarboxylic acid chlorides, and tricarboxylic acids thereof. Examples include residues such as active esters.
 式(5)中のR57-(R59及び式(8)中のR64-(R67は、ジアミンの残基又はその誘導体の残基を表す。
また、式(9)中のR69-(R71及び式(10)中の(OH)-R73-(R75は、ジアミンの中でもビスアミノフェノール化合物又はその誘導体残基を表す。ジアミン及びビスアミノフェノール誘導体としては、ジイソシアネート化合物又はトリメチルシリル化ジアミンが挙げられる。
R 57 -(R 59 ) q in formula (5) and R 64 -(R 67 ) t in formula (8) represent a residue of diamine or a derivative thereof.
Further, R 69 -(R 71 ) v in formula (9) and (OH) w -R 73 -(R 75 ) y in formula (10) are bisaminophenol compounds or derivative residues thereof among diamines. represents Diamine and bisaminophenol derivatives include diisocyanate compounds or trimethylsilylated diamines.
 ジアミン及びビスアミノフェノール化合物の残基又はその誘導体の残基の例としては、3,4’-ジアミノジフェニルエーテル、4,4’-ジアミノジフェニルエーテル、3,4’-ジアミノジフェニルメタン、4,4’-ジアミノジフェニルメタン、1,4-ビス(4-アミノフェノキシ)ベンゼン、ベンジジン、m-フェニレンジアミン、p-フェニレンジアミン、1,5-ナフタレンジアミン、2,6-ナフタレンジアミン、ビス(4-アミノフェノキシ)ビフェニル、ビス{4-(4-アミノフェノキシ)フェニル}エーテル、1,4-ビス(4-アミノフェノキシ)ベンゼン、2,2’-ジメチル-4,4’-ジアミノビフェニル、2,2’-ジエチル-4,4’-ジアミノビフェニル、3,3’-ジメチル-4,4’-ジアミノビフェニル、3,3’-ジエチル-4,4’-ジアミノビフェニル、2,2’,3,3’-テトラメチル-4,4’-ジアミノビフェニル、3,3’,4,4’-テトラメチル-4,4’-ジアミノビフェニル、2,2’-ジ(トリフルオロメチル)-4,4’-ジアミノビフェニル、9,9-ビス(4-アミノフェニル)フルオレン、2,2-ビス(3-アミノ-4-ヒドロキシフェニル)ヘキサフルオロプロパン、2,2’-ビス(トリフルオロメチル)-3,3’-ジヒドロキシベンジジン、2,2’-ビス(トリフルオロメチル)-5,5’-ジヒドロキシベンジジンあるいはこれらの芳香族環の水素原子の少なくとも一部をアルキル基、水酸基又はハロゲン原子で置換した化合物や、脂肪族のシクロヘキシルジアミン、メチレンビスシクロヘキシルアミン及び下記に示した構造のジアミンの残基などが挙げられる。これらを2種以上用いてもよい。 Examples of residues of diamines and bisaminophenol compounds or residues of derivatives thereof include 3,4′-diaminodiphenyl ether, 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenylmethane, 4,4′-diamino diphenylmethane, 1,4-bis(4-aminophenoxy)benzene, benzidine, m-phenylenediamine, p-phenylenediamine, 1,5-naphthalenediamine, 2,6-naphthalenediamine, bis(4-aminophenoxy)biphenyl, bis{4-(4-aminophenoxy)phenyl}ether, 1,4-bis(4-aminophenoxy)benzene, 2,2'-dimethyl-4,4'-diaminobiphenyl, 2,2'-diethyl-4 ,4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminobiphenyl, 3,3'-diethyl-4,4'-diaminobiphenyl, 2,2',3,3'-tetramethyl- 4,4'-diaminobiphenyl, 3,3',4,4'-tetramethyl-4,4'-diaminobiphenyl, 2,2'-di(trifluoromethyl)-4,4'-diaminobiphenyl, 9 ,9-bis(4-aminophenyl)fluorene, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, 2,2′-bis(trifluoromethyl)-3,3′-dihydroxybenzidine , 2,2'-bis(trifluoromethyl)-5,5'-dihydroxybenzidine or compounds in which at least a portion of the hydrogen atoms of these aromatic rings are substituted with alkyl groups, hydroxyl groups or halogen atoms, and aliphatic Examples include cyclohexyldiamine, methylenebiscyclohexylamine, and residues of diamines having the structures shown below. You may use 2 or more types of these.
Figure JPOXMLDOC01-appb-C000015
Figure JPOXMLDOC01-appb-C000015
 式中、R76は酸素原子、C(CF、又はC(CHを表す。R77~R80はそれぞれ独立に水素原子、又は水酸基を表す。 In the formula, R 76 represents an oxygen atom, C(CF 3 ) 2 or C(CH 3 ) 2 . R 77 to R 80 each independently represent a hydrogen atom or a hydroxyl group.
 また、これらのアルカリ可溶性樹脂の末端を、酸性基を有するモノアミン、酸無水物、酸クロリド、モノカルボン酸により封止することで、主鎖末端に酸性基を有するアルカリ可溶性樹脂を得ることができる。 In addition, by blocking the terminal of these alkali-soluble resins with a monoamine, acid anhydride, acid chloride, or monocarboxylic acid having an acidic group, an alkali-soluble resin having an acidic group at the main chain terminal can be obtained. .
 このような酸性基を有するモノアミンの好ましい例としては、2-アミノ安息香酸、3-アミノ安息香酸、4-アミノ安息香酸、4-アミノサリチル酸、5-アミノサリチル酸、6-アミノサリチル酸、3-アミノ-4,6-ジヒドロキシピリミジン、2-アミノフェノール、3-アミノフェノール、4-アミノフェノール、2-アミノチオフェノール、3-アミノチオフェノール、4-アミノチオフェノールなどが挙げられる。これらを2種以上用いてもよい。 Preferred examples of such monoamines having an acidic group include 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 4-aminosalicylic acid, 5-aminosalicylic acid, 6-aminosalicylic acid, 3-amino -4,6-dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2-aminothiophenol, 3-aminothiophenol, 4-aminothiophenol and the like. You may use 2 or more types of these.
 また、このような酸無水物、酸クロリド、モノカルボン酸の好ましい例としては、無水フタル酸、無水マレイン酸、ナジック酸無水物、シクロヘキサンジカルボン酸無水物、3-ヒドロキシフタル酸無水物などの酸無水物、3-カルボキシフェノール、4-カルボキシフェノール、3-カルボキシチオフェノール、4-カルボキシチオフェノールなどのモノカルボン酸類及びこれらのカルボキシル基が酸クロリド化したモノ酸クロリド化合物、モノ酸クロリド化合物とN-ヒドロキシベンゾトリアゾールやN-ヒドロキシ-5-ノルボルネン-2,3-ジカルボキシイミドとの反応により得られる活性エステル化合物が挙げられる。これらを2種以上用いてもよい。 Preferred examples of such acid anhydrides, acid chlorides and monocarboxylic acids include acids such as phthalic anhydride, maleic anhydride, nadic anhydride, cyclohexanedicarboxylic anhydride and 3-hydroxyphthalic anhydride. Monocarboxylic acids such as anhydride, 3-carboxyphenol, 4-carboxyphenol, 3-carboxythiophenol, 4-carboxythiophenol, monoacid chloride compounds in which the carboxyl groups of these are acid chlorides, monoacid chloride compounds and N -hydroxybenzotriazole and active ester compounds obtained by reaction with N-hydroxy-5-norbornene-2,3-dicarboximide. You may use 2 or more types of these.
 樹脂組成物に用いられる(A)アルカリ可溶性樹脂は公知の方法により合成される。ポリイミド前駆体、例えばポリアミド酸やポリアミド酸エステルなどの場合、製造方法として例えば、低温中でテトラカルボン酸二無水物とジアミン化合物を反応させる方法、テトラカルボン酸二無水物とアルコールとによりジエステルを得、その後アミンと縮合剤の存在下で反応させる方法、テトラカルボン酸二無水物とアルコールとによりジエステルを得、その後残りのジカルボン酸を酸クロリド化し、アミンと反応させる方法などで合成することができる。 The (A) alkali-soluble resin used in the resin composition is synthesized by a known method. In the case of polyimide precursors such as polyamic acid and polyamic acid esters, the production methods include, for example, a method of reacting a tetracarboxylic dianhydride and a diamine compound at a low temperature, and a method of obtaining a diester with a tetracarboxylic dianhydride and an alcohol. , then a method of reacting with an amine in the presence of a condensing agent, a method of obtaining a diester with a tetracarboxylic dianhydride and an alcohol, and then converting the remaining dicarboxylic acid into an acid chloride and reacting it with an amine. .
 ポリイミドの場合、例えば前述の方法で得られたポリアミド酸又はポリアミド酸エステルを加熱あるいは酸や塩基などの化学処理で脱水閉環することにより得ることができる。 In the case of polyimide, it can be obtained, for example, by subjecting the polyamic acid or polyamic acid ester obtained by the method described above to dehydration and ring closure by heating or chemical treatment with an acid or base.
 ポリベンゾオキサゾール前駆体、例えばポリヒドロキシアミドなどの場合、製造方法としては、ビスアミノフェノール化合物とジカルボン酸を縮合反応させることで得ることが出来る。具体的には、ジシクロヘキシルカルボジイミド(DCC)のような脱水縮合剤と酸を反応させ、ここにビスアミノフェノール化合物を加える方法やピリジンなどの3級アミンを加えたビスアミノフェノール化合物の溶液にジカルボン酸ジクロリドの溶液を滴下するなどがある。 In the case of a polybenzoxazole precursor, such as polyhydroxyamide, it can be obtained by a condensation reaction between a bisaminophenol compound and a dicarboxylic acid. Specifically, a method of reacting a dehydration condensing agent such as dicyclohexylcarbodiimide (DCC) with an acid and then adding a bisaminophenol compound thereto, or a method of adding a tertiary amine such as pyridine to a solution of a bisaminophenol compound and dicarboxylic acid. For example, a solution of dichloride is added dropwise.
 ポリベンゾオキサゾールの場合、例えば前述の方法で得られたポリヒドロキシアミドなどを加熱あるいは酸や塩基などの化学処理で脱水閉環することにより得ることができる。 In the case of polybenzoxazole, it can be obtained, for example, by dehydrating and ring-closing the polyhydroxyamide or the like obtained by the above-described method by heating or chemical treatment with an acid or base.
 (A)アルカリ可溶性樹脂の含有量は、有機発光装置、表示装置、半導体素子に用いられる平坦化膜、画素分割層、隔壁、及び保護膜として優れた特性を得られる観点から、樹脂組成物100質量%中に0.5質量%以上50質量%以下含まれることが好ましく、1質量%以上30質量%以下含まれることがより好ましい。 (A) The content of the alkali-soluble resin is the resin composition 100 from the viewpoint of obtaining excellent properties as planarizing films, pixel dividing layers, partition walls, and protective films used in organic light-emitting devices, display devices, and semiconductor elements. It is preferably contained in an amount of 0.5% by mass or more and 50% by mass or less, more preferably 1% by mass or more and 30% by mass or less.
 <(B)感光性化合物>
 本発明の樹脂組成物は、更に、(B)感光性化合物を含有することが好ましい。(B)感光性化合物を含有することで、樹脂組成物を感光性樹脂組成物とし、フォトリソグラフィーによるパターン加工が可能となる。(B)感光性化合物としては、光酸発生剤や光重合開始剤などが挙げられる。感光性化合物としては、解像度の観点で、光酸発生剤を含有することが好ましい。
<(B) Photosensitive compound>
The resin composition of the present invention preferably further contains (B) a photosensitive compound. (B) By containing a photosensitive compound, the resin composition can be made into a photosensitive resin composition and patterned by photolithography. (B) Photosensitive compounds include photoacid generators and photopolymerization initiators. From the viewpoint of resolution, the photosensitive compound preferably contains a photoacid generator.
 光酸発生剤としては、キノンジアジド化合物、スルホニウム塩、ホスホニウム塩、ジアゾニウム塩、ヨードニウム塩などを含有することができる。(B)感光性化合物は、キノンジアジド化合物を含有することが好ましい。キノンジアジド化合物としては、ポリヒドロキシ化合物にキノンジアジドのスルホン酸がエステル結合したもの、ポリアミノ化合物にキノンジアジドのスルホン酸がスルホンアミド結合したもの、ポリヒドロキシポリアミノ化合物にキノンジアジドのスルホン酸がエステル結合及び/又はスルホンアミド結合したものなどが挙げられる。中でも、ポリヒドロキシ化合物にキノンジアジドのスルホン酸がエステル結合したものが好ましい。特に、本発明の樹脂組成物において、キノンジアジド化合物が、ポリヒドロキシ化合物のヒドロキシ基にキノンジアジドのスルホン酸がエステル結合した化合物を含有し、該ヒドロキシ基の全体100モル%に対して、キノンジアジドのスルホン酸とエステル結合しているヒドロキシ基の割合が、50モル%以上90モル%以下であることがより好ましい。50モル%以上置換されているキノンジアジド化合物を含有することで、キノンジアジド化合物のアルカリ水溶液に対する親和性が低下し、未露光部の樹脂組成物のアルカリ水溶液に対する溶解性を大きく低下させるとともに、露光によりキノンジアジドスルホニル基がインデンカルボン酸に変化し、露光部の樹脂組成物のアルカリ水溶液に対する大きな溶解速度を得ることができ、結果として組成物の露光部と未露光部の溶解速度比を大きくして、高い解像度でパターンを得ることができる。また、90モル%以下置換されているキノンジアジド化合物を含有することで、パターン開口部の残渣を抑制することができる。このようなキノンジアジド化合物を用いることで、一般的な水銀灯のi線(365nm)、h線(405nm)、g線(436nm)に感光するポジ型の感光性樹脂組成物を得ることができる。また、光酸発生剤は単独で使用しても、2種以上組み合わせて使用してもよく、高感度な感光性樹脂組成物を得ることができる。 A quinonediazide compound, a sulfonium salt, a phosphonium salt, a diazonium salt, an iodonium salt, and the like can be contained as the photoacid generator. (B) The photosensitive compound preferably contains a quinonediazide compound. The quinonediazide compound includes a polyhydroxy compound in which quinonediazide sulfonic acid is ester-bonded, a polyamino compound in which quinonediazide sulfonic acid is sulfonamide-bonded, and a polyhydroxypolyamino compound in which quinonediazide sulfonic acid is ester-bonded and/or sulfonamide. and the like. Among them, a polyhydroxy compound in which a sulfonic acid of quinonediazide is ester-bonded is preferable. In particular, in the resin composition of the present invention, the quinonediazide compound contains a compound in which the sulfonic acid of quinonediazide is ester-bonded to the hydroxy groups of the polyhydroxy compound, and the sulfonic acid of quinonediazide is It is more preferable that the ratio of hydroxy groups ester-bonded with is 50 mol % or more and 90 mol % or less. By containing a quinonediazide compound substituted by 50 mol % or more, the affinity of the quinonediazide compound to an alkaline aqueous solution is reduced, and the solubility of the unexposed area of the resin composition in an alkaline aqueous solution is greatly reduced. The sulfonyl group is changed to indenecarboxylic acid, and a high dissolution rate in an alkaline aqueous solution of the resin composition in the exposed area can be obtained. A pattern can be obtained with resolution. In addition, by containing the quinonediazide compound substituted by 90 mol % or less, it is possible to suppress the residue in the pattern openings. By using such a quinonediazide compound, it is possible to obtain a positive photosensitive resin composition that is sensitive to i-line (365 nm), h-line (405 nm) and g-line (436 nm) of a general mercury lamp. Further, the photoacid generators may be used alone or in combination of two or more, and a highly sensitive photosensitive resin composition can be obtained.
 キノンジアジドは5-ナフトキノンジアジドスルホニル基、4-ナフトキノンジアジドスルホニル基のいずれも好ましく用いられる。5-ナフトキノンジアジドスルホニルエステル化合物は水銀灯のg線領域まで吸収が伸びており、g線露光及び全波長露光に適している。4-ナフトキノンジアジドスルホニルエステル化合物は水銀灯のi線領域に吸収を持っており、i線露光に適している。本発明においては、露光する波長によって4-ナフトキノンジアジドスルホニルエステル化合物、又は5-ナフトキノンジアジドスルホニルエステル化合物を選択することが好ましい。また、同一分子中に4-ナフトキノンジアジドスルホニル基、5-ナフトキノンジアジドスルホニル基を併用した、ナフトキノンジアジドスルホニルエステル化合物を得ることもできるし、4-ナフトキノンジアジドスルホニルエステル化合物と5-ナフトキノンジアジドスルホニルエステル化合物を併用することもできる。 As for quinonediazide, both a 5-naphthoquinonediazidesulfonyl group and a 4-naphthoquinonediazidesulfonyl group are preferably used. A 5-naphthoquinonediazide sulfonyl ester compound has absorption extending to the g-line region of a mercury lamp, and is suitable for g-line exposure and full-wavelength exposure. A 4-naphthoquinonediazide sulfonyl ester compound has absorption in the i-line region of a mercury lamp and is suitable for i-line exposure. In the present invention, it is preferable to select a 4-naphthoquinonediazide sulfonyl ester compound or a 5-naphthoquinone diazidesulfonyl ester compound depending on the exposure wavelength. Further, a naphthoquinonediazidesulfonyl ester compound can be obtained by using a 4-naphthoquinonediazidesulfonyl group and a 5-naphthoquinonediazidesulfonyl group in the same molecule together, or a 4-naphthoquinonediazidesulfonyl ester compound and a 5-naphthoquinonediazidesulfonyl ester compound. can also be used together.
 光酸発生剤の分子量は、熱処理により得られる硬化物の耐熱性、機械特性、接着性の点から、好ましくは300以上、より好ましくは350以上であり、好ましくは3000以下、より好ましくは1500以下である。 The molecular weight of the photoacid generator is preferably 300 or more, more preferably 350 or more, preferably 3000 or less, more preferably 1500 or less, from the viewpoint of heat resistance, mechanical properties, and adhesiveness of the cured product obtained by heat treatment. is.
 (B)感光性化合物の含有量は、(A)アルカリ可溶性樹脂100質量部に対して、好ましくは1質量部以上、より好ましくは3質量部以上であり、好ましくは100質量部以下、より好ましくは80質量部以下である。1~100質量部であれば、熱処理後の硬化物の耐熱性、耐薬品性、機械特性を維持しつつ、感光性を付与することができる。 (B) The content of the photosensitive compound is preferably 1 part by mass or more, more preferably 3 parts by mass or more, and preferably 100 parts by mass or less, more preferably with respect to 100 parts by mass of the alkali-soluble resin (A). is 80 parts by mass or less. If it is 1 to 100 parts by mass, photosensitivity can be imparted while maintaining the heat resistance, chemical resistance and mechanical properties of the cured product after heat treatment.
 <(C)熱発色性化合物>
 本発明の樹脂組成物は、更に、(C)熱発色性化合物を含有することが好ましい。(C)熱発色性化合物は、加熱前は350nm以上700nm以下の領域に最大吸収波長がなく、120℃以上での加熱により、350nm以上700nm以下の領域のいずれかに最大吸収波長を生じる(以下、「熱発色する」と呼ぶ場合がある。)化合物である。(C)熱発色性化合物は、120℃以上の加熱により、350nm以上700nm以下の領域において、350nm以上500nm以下の領域のいずれかに最大吸収波長を生じる化合物を含有することが好ましい。かかる(C)熱発色性化合物を用いることにより、120℃以上の加熱後、350nm~500nmの透過率を大きく低下させることができ、より黒色度の高い硬化物を得られる。
<(C) Thermochromic compound>
The resin composition of the present invention preferably further contains (C) a thermochromic compound. (C) The thermochromic compound does not have a maximum absorption wavelength in the region of 350 nm or more and 700 nm or less before heating, and generates a maximum absorption wavelength in any of the regions of 350 nm or more and 700 nm or less by heating at 120 ° C. or more (hereinafter , sometimes referred to as “thermocoloring”). (C) The thermochromogenic compound preferably contains a compound that, when heated at 120° C. or higher, produces a maximum absorption wavelength in any of the regions of 350 nm to 700 nm and 350 nm to 500 nm. By using such a thermochromic compound (C), the transmittance at 350 nm to 500 nm can be greatly reduced after heating at 120° C. or higher, and a cured product with a higher degree of blackness can be obtained.
 (C)熱発色性化合物は、180℃より高温で熱発色する熱発色性化合物が好ましい。熱発色性化合物が熱発色する温度が高いほど高温条件下での耐熱性に優れ、また長時間の紫外光及び可視光の照射により退色することが少なく耐光性に優れる。 (C) The thermochromic compound is preferably a thermochromic compound that thermally develops color at a temperature higher than 180°C. The higher the temperature at which the thermochromic compound thermally develops color, the better the heat resistance under high temperature conditions, and the less the color fades due to prolonged irradiation with ultraviolet light and visible light, and the better the light resistance.
 (C)熱発色性化合物は、一般の感熱色素又は感圧色素であってもよいし、その他の化合物であってもよい。これらの熱発色性化合物は120℃以上の加熱処理時に系中に共存する酸性基の作用により、その化学構造や電荷状態を変化させることによって発色するもの、あるいは空気中の酸素の存在により120℃以上で熱酸化反応等を起こして熱発色するもの等が挙げられる。熱発色性化合物の骨格構造としては、トリアリールメタン骨格、ジアリールメタン骨格、フルオラン骨格、ビスラクトン骨格、フタリド骨格、キサンテン骨格、ローダミンラクタム骨格、フルオレン骨格、フェノチアジン骨格、フェノキサジン骨格、スピロピラン骨格等が挙げられる。具体的には、特開2004-326094号公報に記載の化合物等が挙げられる。中でも、トリアリールメタン骨格を有する水酸基含有化合物は、熱発色する温度が高く耐熱性に優れるため特に好ましい。これらは単独でもしくは混合して含有してもよい。 (C) The thermochromogenic compound may be a general heat-sensitive dye or pressure-sensitive dye, or may be another compound. These thermochromic compounds are those that develop color by changing their chemical structure and charge state due to the action of acidic groups coexisting in the system during heat treatment at 120 ° C. or higher, or those that develop color by the presence of oxygen in the air. Examples include those that cause a thermal oxidation reaction or the like to develop a thermal color. Examples of the skeleton structure of the thermochromic compound include a triarylmethane skeleton, a diarylmethane skeleton, a fluorane skeleton, a bislactone skeleton, a phthalide skeleton, a xanthene skeleton, a rhodamine lactam skeleton, a fluorene skeleton, a phenothiazine skeleton, a phenoxazine skeleton, and a spiropyran skeleton. be done. Specific examples include the compounds described in JP-A-2004-326094. Among them, a hydroxyl group-containing compound having a triarylmethane skeleton is particularly preferable because of its high heat color development temperature and excellent heat resistance. These may be contained singly or in combination.
 また、(C)熱発色性化合物は、1つの芳香環内に少なくとも1つの芳香族C-H結合および少なくとも3つのフェノール性水酸基を有する芳香族炭化水素化合物を含有し、さらに、式(4)で表されるトリアジン環含有化合物を含有することも好ましい。 In addition, (C) the thermochromogenic compound contains an aromatic hydrocarbon compound having at least one aromatic C—H bond and at least three phenolic hydroxyl groups in one aromatic ring, and further, the formula (4) It is also preferable to contain a triazine ring-containing compound represented by.
Figure JPOXMLDOC01-appb-C000016
Figure JPOXMLDOC01-appb-C000016
式(4)中、R50~R55はそれぞれ独立に、水素原子、炭素原子数1~10のアルキル基、炭素原子数2~10のアルケニル基、炭素原子数2~10のアルケニルエーテル基、メチロール基、炭素原子数2~10のアルコキシメチル基を表す。ただし、R50~R55のうち、少なくとも1つはメチロール基または炭素原子数2~10のアルコキシメチル基である。
本発明の樹脂組成物がこれらの化合物を含有することにより、硬化時の雰囲気に依らず加熱により発色し、硬化後に300nm~500nmの透過率を下げることができる。
In formula (4), R 50 to R 55 are each independently a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkenyl ether group having 2 to 10 carbon atoms, It represents a methylol group and an alkoxymethyl group having 2 to 10 carbon atoms. At least one of R 50 to R 55 is a methylol group or an alkoxymethyl group having 2 to 10 carbon atoms.
By containing these compounds, the resin composition of the present invention develops color by heating regardless of the atmosphere during curing, and can reduce the transmittance of 300 nm to 500 nm after curing.
 1つの芳香環内に少なくとも1つの芳香族C-H結合および3つのフェノール性水酸基を有する芳香族炭化水素としては、例えばフロログルシノール、ピロガロール、1,2.4-トリヒドロキシベンゼン、2,4,5-トリヒドロキシベンズアルデヒド、2,3,4-トリヒドロキシベンズアルデヒド、3,4,5-トリヒドロキシベンズアルデヒド、ガラセトフェノン、2,3,4-トリヒドロキシ安息香酸、没食子酸、没食子酸メチル、没食子酸エチル、没食子酸プロピル、没食子酸オクチル、2,3,4-トリヒドロキシベンゾフェノン、2,3,4,4’-テトラヒドロキシベンゾフェノンなどが挙げられる。また、1つの芳香環内に少なくとも1つの芳香族C-H結合および4つ以上のフェノール性水酸基を有する芳香族炭化水素としては、1,2,3,4-テトラヒドロキシベンゼン、1,2,3,5-テトラヒドロキシベンゼン、1,2,4,5-テトラヒドロキシベンゼン、ロイコキニザリンなどが挙げられる。中でも、硬化後の300nm~500nmの透過率をより下げる観点から、いずれかのフェノール性水酸基に対するそれ以外のフェノール性水酸基の少なくとも1つの置換位置が、オルト位またはパラ位であることが好ましく、パラ位であることがより好ましい。いずれかのフェノール性水酸基に対するそれ以外のフェノール性水酸基の少なくとも1つの置換位置がパラ位である化合物としては、1,2.4-トリヒドロキシベンゼン、2,4,5-トリヒドロキシベンズアルデヒド、1,2,3,4-テトラヒドロキシベンゼン、1,2,3,5-テトラヒドロキシベンゼン、1,2,4,5-テトラヒドロキシベンゼン、ロイコキニザリンなどが挙げられる。 Aromatic hydrocarbons having at least one aromatic C—H bond and three phenolic hydroxyl groups in one aromatic ring include, for example, phloroglucinol, pyrogallol, 1,2.4-trihydroxybenzene, 2,4 ,5-trihydroxybenzaldehyde, 2,3,4-trihydroxybenzaldehyde, 3,4,5-trihydroxybenzaldehyde, galacetophenone, 2,3,4-trihydroxybenzoic acid, gallic acid, methyl gallate, ethyl gallate , propyl gallate, octyl gallate, 2,3,4-trihydroxybenzophenone, 2,3,4,4′-tetrahydroxybenzophenone and the like. Further, aromatic hydrocarbons having at least one aromatic C—H bond and four or more phenolic hydroxyl groups in one aromatic ring include 1,2,3,4-tetrahydroxybenzene, 1,2, 3,5-tetrahydroxybenzene, 1,2,4,5-tetrahydroxybenzene, leucoquinizarin and the like. Among them, from the viewpoint of further lowering the transmittance of 300 nm to 500 nm after curing, at least one substitution position of the other phenolic hydroxyl group for one of the phenolic hydroxyl groups is preferably the ortho or para position. It is more preferable that the Examples of the compound in which at least one substitution position of the other phenolic hydroxyl group with respect to any phenolic hydroxyl group is at the para position include 1,2.4-trihydroxybenzene, 2,4,5-trihydroxybenzaldehyde, 1, 2,3,4-tetrahydroxybenzene, 1,2,3,5-tetrahydroxybenzene, 1,2,4,5-tetrahydroxybenzene, leucoquinizarin and the like.
 また、式(4)で表されるトリアジン環含有化合物は、式(4)において、R50~R55のうち、少なくとも1つはメチロール基またはアルコキシメチル基を有し、メチロール基またはアルコキシメチル基は2つ以上が好ましく、3つ以上がより好ましく、4つ以上がさらに好ましく、6つ全てがメチロール基またはアルコキシメチル基であることが最も好ましい。アルコキシメチル基としては、メトキシメチル基、エトキシメチル基、プロポキシメチル基、ブトキシメチル基などが挙げられる。 In the triazine ring-containing compound represented by formula (4), at least one of R 50 to R 55 has a methylol group or an alkoxymethyl group, and are preferably two or more, more preferably three or more, even more preferably four or more, and most preferably all six are methylol groups or alkoxymethyl groups. Alkoxymethyl groups include methoxymethyl, ethoxymethyl, propoxymethyl and butoxymethyl groups.
 本発明で用いる(C)熱発色性化合物の含有量は、(A)アルカリ可溶性樹脂の100質量部に対して、5~80質量部が好ましく、特に10~60質量部が好ましい。(C)熱発色性化合物の含有量が5質量部以上であれば、硬化物の紫外可視光領域における透過率を低下させることができる。また80質量部以下であれば、硬化物の耐熱性や強度を維持し、吸水率を低減することができる。 The content of (C) the thermochromic compound used in the present invention is preferably 5 to 80 parts by mass, particularly preferably 10 to 60 parts by mass, per 100 parts by mass of the (A) alkali-soluble resin. When the content of (C) the thermochromic compound is 5 parts by mass or more, the transmittance of the cured product in the ultraviolet-visible region can be reduced. Moreover, if it is 80 parts by mass or less, the heat resistance and strength of the cured product can be maintained, and the water absorption can be reduced.
 <その他着色剤>
 本発明の樹脂組成物は、その他着色剤を含有してもよい。このような着色剤は、染料、有機顔料、無機顔料が挙げられるが、目的に合わせて用いることができる。
<Other coloring agents>
The resin composition of the present invention may contain other colorants. Such coloring agents include dyes, organic pigments, and inorganic pigments, and can be used according to the purpose.
 本発明の樹脂組成物は、式(1)で表される化合物、(A)アルカリ可溶性樹脂、(B)感光性化合物、(C)熱発色性化合物以外、その他着色剤以外の化合物として、熱架橋剤、フェノ-ル性水酸基を有する化合物、密着改良剤、界面活性剤などの種々の公知の添加剤を含有してもよい。 The resin composition of the present invention includes a compound represented by formula (1), (A) an alkali-soluble resin, (B) a photosensitive compound, (C) a thermochromic compound, and other compounds other than colorants, such as heat Various known additives such as a cross-linking agent, a compound having a phenolic hydroxyl group, an adhesion improver and a surfactant may be contained.
 <溶剤>
 本発明の樹脂組成物は、溶剤を含有してもよい。溶剤としては、N-メチル-2-ピロリドン、γ-ブチロラクトン、γ-バレロラクトン、δ-バレロラクトン、N,N-ジメチルホルムアミド、N,N-ジメチルアセトアミド、ジメチルスルホキシド、1,3-ジメチル-2-イミダゾリジノン、N,N’-ジメチルプロピレン尿素、N,N-ジメチルイソ酪酸アミド、メトキシ-N,N-ジメチルプロピオンアミドなどの極性の非プロトン性溶媒、テトラヒドロフラン、ジオキサン、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテルなどのエーテル類、アセトン、メチルエチルケトン、ジイソブチルケトンなどのケトン類、酢酸エチル、酢酸ブチル、酢酸イソブチル、酢酸プロピル、プロピレングリコールモノメチルエーテルアセテート、3-メチル-3-メトキシブチルアセテートなどのエステル類、乳酸エチル、乳酸メチル、ジアセトンアルコール、3-メチル-3-メトキシブタノールなどのアルコール類、トルエン、キシレンなどの芳香族炭化水素類等が挙げられる。これらを2種以上含有してもよい。溶剤の含有量は、(A)アルカリ可溶性樹脂100質量部に対して、組成物を溶解させるため、100質量部以上含有することが好ましい。また、溶剤の含有量は、塗布性の観点から、(A)アルカリ可溶性樹脂100質量部に対して、10000質量部以下が好ましく、5000質量部以下がより好ましい。
<Solvent>
The resin composition of the present invention may contain a solvent. Solvents include N-methyl-2-pyrrolidone, γ-butyrolactone, γ-valerolactone, δ-valerolactone, N,N-dimethylformamide, N,N-dimethylacetamide, dimethylsulfoxide, 1,3-dimethyl-2 - polar aprotic solvents such as imidazolidinone, N,N'-dimethylpropylene urea, N,N-dimethylisobutyamide, methoxy-N,N-dimethylpropionamide, tetrahydrofuran, dioxane, propylene glycol monomethyl ether, propylene ethers such as glycol monoethyl ether; ketones such as acetone, methyl ethyl ketone and diisobutyl ketone; esters such as ethyl acetate, butyl acetate, isobutyl acetate, propyl acetate, propylene glycol monomethyl ether acetate, and 3-methyl-3-methoxybutyl acetate; alcohols such as ethyl lactate, methyl lactate, diacetone alcohol and 3-methyl-3-methoxybutanol; and aromatic hydrocarbons such as toluene and xylene. You may contain 2 or more types of these. The content of the solvent is preferably 100 parts by mass or more in order to dissolve the composition in 100 parts by mass of the alkali-soluble resin (A). Moreover, the content of the solvent is preferably 10000 parts by mass or less, more preferably 5000 parts by mass or less with respect to 100 parts by mass of the (A) alkali-soluble resin, from the viewpoint of coating properties.
 本発明の樹脂組成物は、半導体素子や表示装置の絶縁膜、保護膜、及び平坦化膜などの形成に用いることができる。中でも、平坦化層や画素分割層に対して高耐熱性や低アウトガス性に優れることから、有機EL表示装置の平坦化層や画素分割層の形成に用いられることが好ましく、有機EL表示装置のコントラストを向上させられる点から、有機EL表示装置の画素分割層の形成に用いられることが特に好ましい。 The resin composition of the present invention can be used for forming insulating films, protective films, flattening films, etc. of semiconductor elements and display devices. Among them, it is preferably used for forming a planarizing layer and a pixel dividing layer of an organic EL display device because it is excellent in high heat resistance and low outgassing property to a planarizing layer and a pixel dividing layer. From the point of view of improving the contrast, it is particularly preferable to be used for forming the pixel division layer of the organic EL display device.
 <樹脂組成物を製造する方法>
 次に、本発明の樹脂組成物を製造する方法の一例について説明する。
<Method for producing a resin composition>
Next, an example of a method for producing the resin composition of the present invention will be described.
 本発明の樹脂組成物を構成する成分である、式(1)で表される化合物、(A)アルカリ可溶性樹脂、必要により(B)感光性化合物、(C)熱発色性化合物、その他着色剤、熱架橋剤、フェノール性水酸基を有する化合物、密着改良剤、界面活性剤、溶剤などを混合することにより、樹脂組成物を得ることができる。後述する本発明の樹脂組成物膜を製造する方法に供する樹脂組成物は、溶剤を含有し、前記各成分を溶解させることが好ましい。かかる場合に溶解を促進する方法としては、加熱や攪拌が挙げられる。加熱する場合、加熱温度は樹脂組成物の性能を損なわない範囲で設定することが好ましく、通常、室温~80℃である。なお、本明細書において室温とは、25℃とする。また、各成分を溶解する順序は特に限定されず、例えば、溶剤に対し溶解性の低い化合物から順次溶解させる方法などが挙げられる。攪拌する場合、回転数は樹脂組成物の性能を損なわない範囲で設定することが好ましく、通常、200rpm~2000rpmである。攪拌する場合でも必要に応じて加熱してもよく、通常、室温~80℃である。また、界面活性剤や一部の密着改良剤など、撹拌溶解時に気泡を発生しやすい成分については、他の成分を溶解してから最後に添加することで、気泡の発生による他成分の溶解不良を防ぐことができる。 A compound represented by formula (1), (A) an alkali-soluble resin, optionally (B) a photosensitive compound, (C) a thermochromic compound, and other coloring agents, which are components constituting the resin composition of the present invention. , a thermal cross-linking agent, a compound having a phenolic hydroxyl group, an adhesion improver, a surfactant, a solvent, etc., to obtain a resin composition. It is preferable that the resin composition to be used in the method for producing a resin composition film of the present invention, which will be described later, contains a solvent to dissolve the respective components. In such a case, methods for promoting dissolution include heating and stirring. When heating, the heating temperature is preferably set within a range that does not impair the performance of the resin composition, and is usually room temperature to 80°C. In this specification, room temperature is 25°C. Moreover, the order of dissolving each component is not particularly limited, and for example, a method of sequentially dissolving a compound having a low solubility in a solvent may be used. When stirring, the rotation speed is preferably set within a range that does not impair the performance of the resin composition, and is usually 200 rpm to 2000 rpm. Even when the mixture is stirred, it may be heated as necessary, and the temperature is usually from room temperature to 80°C. In addition, for ingredients that tend to generate air bubbles during stirring and dissolution, such as surfactants and some adhesion improvers, dissolving the other ingredients before adding them at the end will prevent poor dissolution of other ingredients due to air bubbles. can be prevented.
 得られた樹脂組成物は、濾過フィルターを用いて濾過し、ゴミや粒子を除去することが好ましい。フィルター孔径は、例えば0.5μm、0.2μm、0.1μm、0.05μm、0.02μmなどがあるが、これらに限定されない。濾過フィルターの材質には、ポリプロピレン(PP)、ポリエチレン(PE)、ナイロン(NY)、ポリテトラフルオロエチエレン(PTFE)などがあるが、ポリエチレンやナイロンが好ましい。また、樹脂組成物中に有機顔料を含有する場合、これらの粒子径より大きな孔径の濾過フィルターを用いることが好ましい。 The obtained resin composition is preferably filtered using a filtration filter to remove dust and particles. Examples of filter pore sizes include, but are not limited to, 0.5 μm, 0.2 μm, 0.1 μm, 0.05 μm, and 0.02 μm. Materials for the filter include polypropylene (PP), polyethylene (PE), nylon (NY), polytetrafluoroethylene (PTFE), etc., and polyethylene and nylon are preferred. Moreover, when an organic pigment is contained in the resin composition, it is preferable to use a filtration filter having a pore size larger than the particle size of these pigments.
 <硬化物>
 本発明の硬化物の第一の態様は、本発明の樹脂組成物を硬化した硬化物である。また、本発明の硬化物の第二の態様は、本発明の化合物を含有する硬化物である。
<Cured product>
A first aspect of the cured product of the present invention is a cured product obtained by curing the resin composition of the present invention. A second aspect of the cured product of the present invention is a cured product containing the compound of the present invention.
 本発明の硬化物は、例えば、上述した式(1)で表される化合物を含有する樹脂組成物を基板等に塗布して加熱処理して硬化することで、得ることができる。加熱処理条件としては200℃以上が好ましく、250℃以上がより好ましい。また加熱処理条件は、400℃以下が好ましく、350℃以下がより好ましい。 The cured product of the present invention can be obtained, for example, by coating a substrate or the like with a resin composition containing the compound represented by the above formula (1), followed by heat treatment and curing. The heat treatment conditions are preferably 200° C. or higher, more preferably 250° C. or higher. The heat treatment conditions are preferably 400° C. or lower, more preferably 350° C. or lower.
 <硬化物を製造する方法>
 本発明の硬化物を製造する方法の一例について説明する。
<Method for producing cured product>
An example of the method for producing the cured product of the present invention will be described.
 硬化物を製造する方法の一例では、(1)上述した樹脂組成物を、基板に塗布し塗膜を形成する工程、(2)上記塗膜に活性化学線を用いて露光し、露光した塗膜を得る工程、(3)上記露光した塗膜をアルカリ溶液を用いて現像し、現像した塗膜を得る工程、及び、(4)上記現像した塗膜を加熱して硬化物を得る工程をこの順に有する。 In one example of a method for producing a cured product, (1) the above-described resin composition is applied to a substrate to form a coating film, (2) the coating film is exposed to actinic radiation, and the exposed coating (3) developing the exposed coating film with an alkaline solution to obtain a developed coating film; and (4) heating the developed coating film to obtain a cured product. have in this order.
 (1)樹脂組成物の塗膜を形成する工程では、本発明の樹脂組成物を、例えば、スピンコート法、スリットコート法、ディップコート法、スプレーコート法、印刷法などで塗布し、樹脂組成物の塗膜を得る。塗布に先立ち、樹脂組成物を塗布する基材を予め前述した密着改良剤で前処理してもよい。例えば、密着改良剤をイソプロパノール、エタノール、メタノール、水、テトラヒドロフラン、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノメチルエーテル、乳酸エチル、アジピン酸ジエチルなどの溶媒に0.5~20質量%溶解させた溶液を用いて、基材表面を処理する方法が挙げられる。基材表面の処理方法としては、スピンコート、スリットダイコート、バーコート、ディップコート、スプレーコート、蒸気処理などの方法が挙げられる。塗膜を乾燥する工程では、製膜した塗膜を必要に応じて減圧乾燥処理を施し、その後、ホットプレート、オーブン、赤外線などを用いて、50℃~180℃の範囲で1分間~数時間の熱処理を施すことで塗膜を得る。 (1) In the step of forming a coating film of the resin composition, the resin composition of the present invention is applied by, for example, a spin coating method, a slit coating method, a dip coating method, a spray coating method, a printing method, etc., and the resin composition is coated. Get a coating of things. Prior to application, the substrate to be coated with the resin composition may be pretreated with the above-described adhesion improver. For example, a solution obtained by dissolving 0.5 to 20% by mass of an adhesion improver in a solvent such as isopropanol, ethanol, methanol, water, tetrahydrofuran, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, ethyl lactate, and diethyl adipate is used. and a method of treating the substrate surface. Methods for treating the substrate surface include spin coating, slit die coating, bar coating, dip coating, spray coating, vapor treatment, and the like. In the step of drying the coating film, the formed coating film is optionally dried under reduced pressure, and then using a hot plate, oven, infrared rays, etc., in the range of 50 ° C. to 180 ° C. for 1 minute to several hours. A coating film is obtained by applying the heat treatment of.
 次に、(2)上記塗膜を露光する工程について説明する。
上記塗膜に活性化学線を照射する(以下、露光という場合もある。)。このとき、必要に応じて所望のパタ-ンを有するフォトマスクを介して露光してもよいし、レーザーなどで直接塗膜に露光してもよい。露光に用いられる活性化学線としては紫外線、可視光線、電子線、X線などがあるが、本発明では水銀灯のi線(365nm)、h線(405nm)、g線(436nm)を用いることが好ましい。
Next, (2) the step of exposing the coating film will be described.
The coating film is irradiated with actinic radiation (hereinafter sometimes referred to as exposure). At this time, if necessary, the exposure may be performed through a photomask having a desired pattern, or the coating film may be exposed directly with a laser or the like. Actinic rays used for exposure include ultraviolet rays, visible rays, electron beams, X-rays, etc. In the present invention, i-rays (365 nm), h-rays (405 nm) and g-rays (436 nm) of mercury lamps can be used. preferable.
 次に、(3)露光した塗膜を、アルカリ溶液を用いて現像し、現像した塗膜を得る工程について説明する。
上記露光した塗膜を、アルカリ溶液を用いて現像し、塗膜の露光部を除去する。このときの現像液は、テトラメチルアンモニウムヒドロキシド、ジエタノールアミン、ジエチルアミノエタノール、水酸化ナトリウム、水酸化カリウム、炭酸ナトリウム、炭酸カリウム、トリエチルアミン、ジエチルアミン、メチルアミン、ジメチルアミン、酢酸ジメチルアミノエチル、ジメチルアミノエタノール、ジメチルアミノエチルメタクリレート、シクロヘキシルアミン、エチレンジアミン、ヘキサメチレンジアミンなどのアルカリ性を示す化合物の水溶液が好ましい。また場合によっては、これらのアルカリ水溶液にN-メチル-2-ピロリドン、N,N-ジメチルホルムアミド、N,N-ジメチルアセトアミド、ジメチルスルホキシド、γ-ブチロラクトン、ジメチルアクリルアミドなどの極性溶媒、メタノール、エタノール、イソプロパノールなどのアルコール類、乳酸エチル、プロピレングリコールモノメチルエーテルアセテートなどのエステル類、シクロペンタノン、シクロヘキサノン、イソブチルケトン、メチルイソブチルケトンなどのケトン類などを1種又は2種以上添加してもよい。現像方式としては、スプレー、パドル、浸漬、超音波等の方式が可能である。
Next, (3) the step of developing the exposed coating film with an alkaline solution to obtain a developed coating film will be described.
The exposed coating film is developed using an alkaline solution to remove the exposed portion of the coating film. The developer at this time is tetramethylammonium hydroxide, diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol. , dimethylaminoethyl methacrylate, cyclohexylamine, ethylenediamine, hexamethylenediamine, and other alkaline compounds. In some cases, these alkaline aqueous solutions are added with a polar solvent such as N-methyl-2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide, dimethylsulfoxide, γ-butyrolactone, dimethylacrylamide, methanol, ethanol, One or more of alcohols such as isopropanol, esters such as ethyl lactate and propylene glycol monomethyl ether acetate, and ketones such as cyclopentanone, cyclohexanone, isobutyl ketone and methyl isobutyl ketone may be added. As a developing method, methods such as spray, puddle, immersion, and ultrasonic waves are possible.
 次に、現像によって形成したパターンを蒸留水にてリンス処理をすることが好ましい。ここでもエタノール、イソプロピルアルコールなどのアルコール類、乳酸エチル、プロピレングリコールモノメチルエーテルアセテートなどのエステル類などを蒸留水に加えてリンス処理をしてもよい。 Next, it is preferable to rinse the pattern formed by development with distilled water. Also here, alcohols such as ethanol and isopropyl alcohol, and esters such as ethyl lactate and propylene glycol monomethyl ether acetate may be added to the distilled water for rinsing.
 次に、(4)現像した塗膜を加熱処理して硬化物を得る工程について説明する。
現像した塗膜を加熱処理にすることにより残留溶剤や耐熱性の低い成分を除去できるため、硬化物の耐熱性及び耐薬品性を向上させることができる。この加熱処理はある温度を選び、段階的に昇温するか、ある温度範囲を選び連続的に昇温しながら5分間~5時間実施する。例えば、230℃で60分間加熱処理する方法などが挙げられる。本発明においての加熱処理条件としては200℃以上が好ましく、230℃以上がより好ましい。また加熱処理条件は、400℃以下が好ましく、350℃以下がより好ましい。
Next, (4) the step of heat-treating the developed coating film to obtain a cured product will be described.
By heat-treating the developed coating film, the residual solvent and components with low heat resistance can be removed, so that the heat resistance and chemical resistance of the cured product can be improved. For this heat treatment, a certain temperature is selected and the temperature is raised stepwise, or a certain temperature range is selected and the temperature is raised continuously for 5 minutes to 5 hours. For example, a method of heat-treating at 230° C. for 60 minutes can be used. The heat treatment conditions in the present invention are preferably 200° C. or higher, more preferably 230° C. or higher. The heat treatment conditions are preferably 400° C. or lower, more preferably 350° C. or lower.
 <表示装置>
 本発明の表示装置は、本発明の硬化物を具備する。
樹脂組成物を硬化した硬化物は、TFTが形成された基板、駆動回路上の平坦化層、第一電極上の画素分割層及び表示素子、第二電極をこの順に有する表示装置の平坦化層や画素分割層に含まれる。かかる構成の表示装置としては、液晶表示装置や有機EL表示装置などが挙げられる。中でも、平坦化層や画素分割層に対して高耐熱性や低アウトガス性が要求される有機EL表示装置に特に好適に用いられ、有機EL表示装置のコントラストを向上させられる点から、画素分割層に特に好適に用いられる。
<Display device>
The display device of the present invention comprises the cured product of the present invention.
A cured product obtained by curing the resin composition is a substrate on which TFTs are formed, a flattening layer on the driving circuit, a pixel dividing layer and a display element on the first electrode, and a flattening layer of a display device having the second electrode in this order. and the pixel division layer. Examples of display devices having such a configuration include liquid crystal display devices and organic EL display devices. Among them, the pixel division layer is particularly suitable for use in organic EL display devices in which high heat resistance and low outgassing properties are required for the planarization layer and the pixel division layer, and can improve the contrast of the organic EL display device. is particularly preferably used for
 本発明の樹脂組成物を硬化した硬化物は、平坦化層、画素分割層のいずれか一方のみに用いてもよいし、両方に用いてもよい。アクティブマトリックス型の表示装置は、ガラスなどの基板上にTFTとTFTの側方部に位置しTFTと接続された配線とを有し、その上に凹凸を覆うようにして平坦化層を有し、さらに平坦化層上に表示素子が設けられている。表示素子と配線とは、平坦化層に形成されたコンタクトホールを介して接続される。 A cured product obtained by curing the resin composition of the present invention may be used for either one of the flattening layer and the pixel dividing layer, or may be used for both. An active matrix type display device has a TFT and wirings located on the sides of the TFT and connected to the TFT on a substrate such as glass, and has a flattening layer thereon so as to cover unevenness. Furthermore, a display element is provided on the planarization layer. The display element and the wiring are connected through a contact hole formed in the planarization layer.
 以下実施例等をあげて本発明を説明するが、本発明はこれらの例によって限定されるものではない。 The present invention will be described below with reference to examples, etc., but the present invention is not limited to these examples.
 <残膜率の評価>
 実施例及び比較例で調製した樹脂組成物(以下、ワニスと記す場合もある。)を、ITOをスパッタにより成膜したガラス基板(ジオマテック(株)製;以下、「ITO基板」)上にスピンコーター(MS-A100;ミカサ社製)を用いて加熱処理(キュア)後の膜厚が3.0μmとなるようにスピンコートで塗布し、ブザーホットプレート(HPD-3000BZN;アズワン社製)を用いて120℃で120秒間プリベークし、プリベーク膜を作製した。得られたプリベーク膜を、2.38質量%のテトラメチルアンモニウム(TMAH)水溶液で所望の膜厚を得るべく60秒間現像し、次いで純水でリンスし、現像膜を得た。
<Evaluation of residual film ratio>
The resin compositions prepared in Examples and Comparative Examples (hereinafter also referred to as varnish) were spun onto a glass substrate (manufactured by Geomatec Co., Ltd.; hereinafter referred to as "ITO substrate") on which an ITO film was formed by sputtering. It was applied by spin coating using a coater (MS-A100; manufactured by Mikasa) so that the film thickness after heat treatment (cure) was 3.0 μm, and a buzzer hot plate (HPD-3000BZN; manufactured by AS ONE) was used. was prebaked at 120° C. for 120 seconds to prepare a prebaked film. The resulting prebaked film was developed with a 2.38% by mass tetramethylammonium (TMAH) aqueous solution for 60 seconds to obtain a desired film thickness, and then rinsed with pure water to obtain a developed film.
 プリベーク膜及び現像膜の、基板中央部における膜厚を、触針式プロファイラー(P-15;ケーエルエー・テンコール社製)を用いて測定し、これらの値から残膜率を次式で求め、以下のように判定した。
残膜率[%] = (現像膜の膜厚)/(プリベーク膜の膜厚)×100
A:残膜率が80%以上100%以下
B:残膜率が50%以上80%未満
C:残膜率が50%未満。
The film thicknesses of the pre-baked film and the developed film at the center of the substrate are measured using a stylus profiler (P-15; manufactured by KLA-Tencor Co., Ltd.). determined as follows.
Remaining film ratio [%] = (film thickness of developed film)/(film thickness of prebaked film) x 100
A: Remaining film rate is 80% or more and 100% or less B: Remaining film rate is 50% or more and less than 80% C: Remaining film rate is less than 50%.
 (2)開口寸法変化の評価
 上記手順で得られたプリベーク膜をghi線マスクアライナー(PEM-6M;ユニオン光学(株)製)を用いてそれぞれ0~1000mJ/cmの露光量にて感度測定用のグレースケールマスク(MDRM MODEL 4000-5-FS;Opto-Line International社製)を介して露光した。露光後、2.38質量%のテトラメチルアンモニウム(TMAH)水溶液で所望の膜厚を得るべく60秒間現像し、次いで純水でリンスし、レリーフパターンを得た。FDP顕微鏡MX61(オリンパス(株)製)を用いて倍率100倍で観察し、20μmのライン・アンド・スペースパターンを1対1の幅に形成する露光量での開口寸法(現像後の開口寸法)を測定した。その後、得られたパターンを、窒素雰囲気下230℃のオーブン中で60分間キュアし、上記と同じ露光量における開口寸法(キュア後の開口寸法)を測定した。これらの測定値から、開口寸法変化を次式で求め、以下のように判定した。
開口寸法変化[μm]=(現像後の開口寸法)-(キュア後の開口寸法)
A:開口寸法変化が0.0μm以上0.1μm以下
B:開口寸法変化が0.1um超0.2μm以下
C:開口寸法変化が0.2μm超、または0.0μm未満。
(2) Evaluation of changes in opening dimensions The sensitivity of the pre-baked film obtained by the above procedure was measured using a ghi-line mask aligner (PEM-6M; manufactured by Union Optical Co., Ltd.) at an exposure amount of 0 to 1000 mJ/cm 2 . (MDRM MODEL 4000-5-FS; manufactured by Opto-Line International). After the exposure, the film was developed with a 2.38 mass % tetramethylammonium (TMAH) aqueous solution for 60 seconds to obtain a desired film thickness, and then rinsed with pure water to obtain a relief pattern. Observed at a magnification of 100 using an FDP microscope MX61 (manufactured by Olympus Corporation), aperture size (aperture size after development) at an exposure amount that forms a 20 μm line-and-space pattern with a width of 1:1. was measured. After that, the resulting pattern was cured in an oven at 230° C. for 60 minutes in a nitrogen atmosphere, and the opening size (opening size after curing) was measured at the same exposure dose as above. From these measured values, the change in opening dimension was obtained by the following formula and judged as follows.
Aperture dimension change [μm] = (aperture dimension after development) - (aperture dimension after curing)
A: Change in opening dimension is 0.0 μm or more and 0.1 μm or less B: Change in opening dimension is more than 0.1 μm and not more than 0.2 μm C: Change in opening dimension is more than 0.2 μm or less than 0.0 μm.
 (3)信頼性の評価
 信頼性の評価は、実施例及び比較例で調製した樹脂組成物からなる硬化物を画素分割層として有する有機EL表示装置の発光面積率により評価した。
(3) Evaluation of Reliability Reliability was evaluated based on the emission area ratio of an organic EL display device having, as a pixel dividing layer, a cured product made of the resin composition prepared in Examples and Comparative Examples.
 図1(a)~(d)に使用した基板の概略図を示す。まず、38×46mmの無アルカリガラス基板1に、スパッタ法によりITO透明導電膜10nmを基板全面に形成し、第一電極2としてエッチングした。また、同時に第二電極を取り出すため補助電極3も同時に形成した(図1(a))。得られた基板を“セミコクリーン”(登録商標)56(商品名、フルウチ化学(株)製)で10分間超音波洗浄してから、超純水で洗浄した。次にこの基板全面に、各実施例及び比較例で調製した感光性樹脂組成物をスピンコート法により塗布し、100℃のホットプレート上で2分間プリベークした。この膜にフォトマスクを介してUV露光した後、2.38質量%水酸化テトラメチルアンモニウム水溶液で現像し、露光部分のみを溶解させた後、純水でリンスした。得られたパターンを、窒素雰囲気下230℃のオーブン中で60分間キュアした。このようにして、幅70μm、長さ260μmの開口部が幅方向にピッチ155μm、長さ方向にピッチ465μmで配置され、それぞれの開口部が第一電極を露出せしめる形状の画素分割層4を、基板有効エリアに限定して形成した(図1(b))。なお、この開口部が最終的に発光画素となる。また、基板有効エリアは16mm四方、絶縁層の厚さは約1.0μmであった。 Schematic diagrams of the substrates used are shown in FIGS. First, on an alkali-free glass substrate 1 of 38×46 mm, an ITO transparent conductive film of 10 nm was formed on the entire surface of the substrate by a sputtering method and etched as a first electrode 2 . At the same time, an auxiliary electrode 3 was also formed in order to take out the second electrode (FIG. 1(a)). The obtained substrate was ultrasonically cleaned for 10 minutes with "Semicoclean" (registered trademark) 56 (trade name, manufactured by Furuuchi Chemical Co., Ltd.) and then cleaned with ultrapure water. Next, the entire surface of the substrate was coated with the photosensitive resin composition prepared in each example and comparative example by spin coating, and prebaked on a hot plate at 100° C. for 2 minutes. After the film was exposed to UV light through a photomask, it was developed with a 2.38 mass % tetramethylammonium hydroxide aqueous solution to dissolve only the exposed portion, and then rinsed with pure water. The resulting pattern was cured in an oven at 230° C. for 60 minutes under a nitrogen atmosphere. In this manner, the pixel division layer 4 having a width of 70 μm and a length of 260 μm is arranged at a pitch of 155 μm in the width direction and a pitch of 465 μm in the length direction, and each opening exposes the first electrode. It is formed only in the effective area of the substrate (FIG. 1(b)). Note that this opening finally becomes a light-emitting pixel. The effective area of the substrate was 16 mm square, and the thickness of the insulating layer was about 1.0 μm.
 次に、第一電極2、補助電極3、画素分割層4を形成した基板を用いて有機EL表示装置の作製を行った。前処理として窒素プラズマ処理をおこなった後、真空蒸着法により発光層を含む有機EL層5を形成した(図1(c))。なお、蒸着時の真空度は1×10-3Pa以下であり、蒸着中は蒸着源に対して基板を回転させた。まず、正孔注入層として化合物(HT-1)を10nm、正孔輸送層として化合物(HT-2)を50nm蒸着した。次に発光層に、ホスト材料としての化合物(GH-1)とドーパント材料としての化合物(GD-1)を、ドープ濃度が10%になるようにして40nmの厚さに蒸着した。次に、電子輸送材料として化合物(ET-1)と(LiQ)を体積比1:1で40nmの厚さに積層した。有機EL層で用いた化合物の構造を以下に示す。 Next, using the substrate on which the first electrode 2, the auxiliary electrode 3 and the pixel dividing layer 4 were formed, an organic EL display device was produced. After performing a nitrogen plasma treatment as a pretreatment, an organic EL layer 5 including a light-emitting layer was formed by a vacuum deposition method (FIG. 1(c)). The degree of vacuum during vapor deposition was 1×10 −3 Pa or less, and the substrate was rotated with respect to the vapor deposition source during vapor deposition. First, 10 nm of compound (HT-1) was deposited as a hole injection layer, and 50 nm of compound (HT-2) was deposited as a hole transport layer. Next, a compound (GH-1) as a host material and a compound (GD-1) as a dopant material were deposited on the light-emitting layer to a thickness of 40 nm with a doping concentration of 10%. Next, compounds (ET-1) and (LiQ) as electron-transporting materials were laminated at a volume ratio of 1:1 to a thickness of 40 nm. Structures of compounds used in the organic EL layer are shown below.
Figure JPOXMLDOC01-appb-C000017
Figure JPOXMLDOC01-appb-C000017
 次に、化合物(LiQ)を2nm蒸着した後、MgAgを、MgとAgの体積比が10:1で10nm共蒸着して第二電極6とした(図1(d))。最後に、低湿窒素雰囲気下でエポキシ樹脂系接着剤を用いてキャップ状ガラス板を接着することで封止をし、1枚の基板上に5mm四方の発光装置を4つ作製した。なお、ここで言う膜厚は水晶発振式膜厚モニター表示値である。 Next, after vapor-depositing a compound (LiQ) to a thickness of 2 nm, MgAg was co-deposited to a thickness of 10 nm at a volume ratio of Mg and Ag of 10:1 to form the second electrode 6 (Fig. 1(d)). Finally, in a low-humidity nitrogen atmosphere, a cap-shaped glass plate was adhered using an epoxy resin adhesive for sealing, and four 5 mm square light emitting devices were fabricated on one substrate. Incidentally, the film thickness referred to here is the value displayed by the crystal oscillation type film thickness monitor.
 作製した有機EL表示装置を10mA/cmで直流駆動にて発光させ、発光画素における発光面積(UV光照射前の発光面積)を測定した。次に、発光面を上にして80℃に加熱したホットプレートに乗せ、波長365nm、照度0.6mW/cmのUV光を照射した。1000時間経過後に10mA/cmで直流駆動にて発光させ、発光画素における発光面積(UV光照射後の発光面積)を測定した。これらの測定値から、発光面積率を次式で求め、その値から信頼性を以下のように判定した。
発光面積率[%]=(UV光照射後の発光面積)/(UV光照射前の発光面積)×100
A:発光面積率が75%超100%以下
B:発光面積率が50%超75%以下
C:発光面積率が50%以下。
The produced organic EL display device was driven to emit light by direct current driving at 10 mA/cm 2 , and the light emitting area in the light emitting pixel (light emitting area before UV light irradiation) was measured. Next, it was placed on a hot plate heated to 80° C. with the light-emitting surface facing up, and irradiated with UV light having a wavelength of 365 nm and an illuminance of 0.6 mW/cm 2 . After 1000 hours, light was emitted by direct current driving at 10 mA/cm 2 , and the light-emitting area in the light-emitting pixel (light-emitting area after UV light irradiation) was measured. From these measured values, the emission area ratio was determined by the following formula, and the reliability was determined as follows from the value.
Luminescent area ratio [%] = (luminous area after UV light irradiation) / (luminous area before UV light irradiation) x 100
A: Emission area ratio of more than 75% and 100% or less B: Emission area ratio of more than 50% and 75% or less C: Emission area ratio of 50% or less.
 (4)樹脂組成物の冷凍保存安定性の評価
 東京エレクトロン(株)製塗布・現像装置“CLEAN TRACK ACT-12”を用いて、ろ過後-18℃の冷凍庫で60日間静置保存した各ワニスを12インチSiウエハ上に塗布し、100℃で3分間、ホットプレートで乾燥させ、膜厚1000nmの感光性樹脂膜を得た。得られた感光性樹脂膜について、(株)トプコン製ウエハ表面検査装置“WM-10”にて0.27μm以上の大きさの異物数を計測した。計測面積はウエハの中心から半径8cmの円の内側の約201cmとし、塗膜1cmあたりの異物数(欠陥密度)を求めた。基板1枚あたりの欠陥密度が1.00個/cm未満であった場合は「A」、1.00個/cm以上3.00個/cm未満であった場合は「B」、3.00個/cm以上であった場合は「C」と判定した。
(4) Evaluation of frozen storage stability of the resin composition Each varnish was stored statically in a freezer at -18 ° C. for 60 days after filtration using a coating / developing device "CLEAN TRACK ACT-12" manufactured by Tokyo Electron Co., Ltd. was applied onto a 12-inch Si wafer and dried on a hot plate at 100° C. for 3 minutes to obtain a photosensitive resin film with a thickness of 1000 nm. For the obtained photosensitive resin film, the number of foreign substances having a size of 0.27 μm or more was counted using a wafer surface inspection device “WM-10” manufactured by Topcon Corporation. The measurement area was about 201 cm 2 inside a circle with a radius of 8 cm from the center of the wafer, and the number of foreign substances (defect density) per 1 cm 2 of the coating film was determined. "A" when the defect density per substrate is less than 1.00/cm 2 , "B" when it is 1.00/cm 2 or more and less than 3.00/cm 2 , When it was 3.00/cm 2 or more, it was judged as "C".
 [合成例1]
 セパラブルフラスコにアニオン成分としてC.I.アシッドレッド52 20.3g(0.035モル)、純水400gを投入し、室温で30分攪拌した。ここにカチオン成分としてテトラヘキシルアンモニウムブロミド 16.9g(0.039モル)を純水1700gに溶解させた水溶液を投入後、室温で60分攪拌した。その後、反応液をろ過し、赤色の固体を得た。この固体を減圧下60℃で8時間乾燥させ、式(1)で表される化合物z-1を得た。得られた化合物は、水素核磁気共鳴分光法(H NMR)(JNM-ECZ400R;日本電子(株)製)により同定を行った。
[Synthesis Example 1]
C.I. as an anion component was added to a separable flask. I. 20.3 g (0.035 mol) of Acid Red 52 and 400 g of pure water were added and stirred at room temperature for 30 minutes. An aqueous solution prepared by dissolving 16.9 g (0.039 mol) of tetrahexylammonium bromide as a cationic component in 1700 g of pure water was added thereto, followed by stirring at room temperature for 60 minutes. After that, the reaction solution was filtered to obtain a red solid. This solid was dried at 60° C. for 8 hours under reduced pressure to obtain compound z-1 represented by formula (1). The obtained compound was identified by hydrogen nuclear magnetic resonance spectroscopy ( 1 H NMR) (JNM-ECZ400R; manufactured by JEOL Ltd.).
 H NMR(400MHz,DMSO-d)δ:8.26(d,J=2.0Hz,1H,ArH),7.72(dd,J=8.0Hz,J=2.0Hz,1H,ArH),7.14(d,J=8.0Hz,1H,ArH),7.03(s,4H,ArH),6.92(s,2H,ArH),3.66-3.61(m,8H,ArNCH),3.18-3.13(m,8H,NCH),1.56(br,8H,NCHCH),1.29(br,24H,N(CH(CH),1.21(t,J=6.8Hz,12H,ArNCHCH),0.88(t,J=7.0Hz,12H,N(CHCH)。 1 H NMR (400 MHz, DMSO-d 6 ) δ: 8.26 (d, J = 2.0 Hz, 1H, ArH), 7.72 (dd, J = 8.0 Hz, J = 2.0 Hz, 1H, ArH), 7.14 (d, J=8.0 Hz, 1H, ArH), 7.03 (s, 4H, ArH), 6.92 (s, 2H, ArH), 3.66-3. 61 (m, 8H, ArNCH 2 ), 3.18-3.13 (m, 8H, NCH 2 ), 1.56 (br, 8H, NCH 2 CH 2 ), 1.29 (br, 24H, N( CH2 ) 2 ( CH2 ) 3 ), 1.21 (t, J = 6.8 Hz, 12H, ArNCH2CH3 ), 0.88 (t, J = 7.0 Hz, 12H, N( CH2 ) 5CH3 ) .
 [合成例2]
合成例1において、カチオン成分として、テトラヘキシルアンモニウムブロミド 16.9g(0.039モル)の代わりに、テトラペンチルアンモニウムブロミド 14.8g(0.039モル)を使用した以外は同様にして、式(1)で表される化合物z-2を得た。同定の結果を下記に示す。
[Synthesis Example 2]
In Synthesis Example 1, the formula ( A compound z-2 represented by 1) was obtained. The identification results are shown below.
 H NMR(400MHz,DMSO-d):8.26(d,J=2.0Hz,1H,ArH),7.72(dd,J1=8.0Hz,J2=2.0Hz,1H,ArH),7.14(d,J=8.0Hz,1H,ArH),7.03(s,4H,ArH),6.92(s,2H,ArH),3.66-3.61(m,8H,ArNCH),3.18-3.14(m,8H,NCH),1.61-1.54(m,8H,NCHCH),1.38-1.15(m,28H),0.89(t,J=7.0Hz,12H,N(CHCH)。 1 H NMR (400 MHz, DMSO-d 6 ): 8.26 (d, J = 2.0 Hz, 1 H, ArH), 7.72 (dd, J = 8.0 Hz, J = 2.0 Hz, 1 H, ArH ), 7.14 (d, J = 8.0Hz, 1H, ArH), 7.03 (s, 4H, ArH), 6.92 (s, 2H, ArH), 3.66-3.61 (m , 8H, ArNCH 2 ), 3.18-3.14 (m, 8H, NCH 2 ), 1.61-1.54 (m, 8H, NCH 2 CH 2 ), 1.38-1.15 (m , 28H), 0.89 (t , J=7.0 Hz, 12H, N( CH2 ) 4CH3 ).
 [合成例3]
合成例1において、アニオン成分として、C.I.アシッドレッド52 20.3g(0.035モル)の代わりに、C.I.アシッドレッド289 23.7g(0.035モル)を使用した以外は同様にして、式(1)で表される化合物z-3を得た。同定の結果を下記に示す。
[Synthesis Example 3]
In Synthesis Example 1, C.I. I. Instead of 20.3 g (0.035 mol) of Acid Red 52, C.I. I. Compound z-3 represented by formula (1) was obtained in the same manner except that 23.7 g (0.035 mol) of Acid Red 289 was used. The identification results are shown below.
 H NMR(400MHz,DMSO-d):9.92(s,2H,ArNH),8.04-7.18(m,14H,ArH),6.01(s,2H,ArH),3.18-3.13(m,8H,NCH),2.20-2.15(m,6H,ArCH),1.56(br,8H,NCHCH),1.29(br,24H,N(CH(CH),0.88(t,J=7.0Hz,12H,N(CHCH)。 1 H NMR (400 MHz, DMSO-d 6 ): 9.92 (s, 2H, ArNH), 8.04-7.18 (m, 14H, ArH), 6.01 (s, 2H, ArH), 3 .18-3.13 (m, 8H, NCH 2 ), 2.20-2.15 (m, 6H, ArCH 3 ), 1.56 (br, 8H, NCH 2 CH 2 ), 1.29 (br , 24H, N( CH2 ) 2 ( CH2 ) 3 ) , 0.88 (t, J=7.0 Hz, 12H, N( CH2 ) 5CH3 ).
 [合成例4]
合成例1において、アニオン成分として、C.I.アシッドレッド52 20.3g(0.035モル)の代わりに、C.I.アシッドブルー90 29.9g(0.035モル)を使用した以外は同様にして、式(1)で表される化合物z-4を得た。同定の結果を下記に示す。
[Synthesis Example 4]
In Synthesis Example 1, C.I. I. Instead of 20.3 g (0.035 mol) of Acid Red 52, C.I. I. Compound z-4 represented by formula (1) was obtained in the same manner except that 29.9 g (0.035 mol) of Acid Blue 90 was used. The identification results are shown below.
 H NMR(400MHz,DMSO-d):10.03(s,1H,ArNH),7.59-7.50(m,4H,ArH),7.39-7.17(m,8H,ArH),7.04-6.78(m,10H,ArH),4.80(s,4H,ArCHN),4.04(m,2H,ArOCH),3.68-3.62(m,4H,ArNCH),3.15(m,8H,NCH),1.79(br s,6H,ArCH),1.56(br,8H,NCHCH),1.35-1.19(m,33H),0.88(t,J=7.0Hz,12H,N(CHCH)。 1 H NMR (400 MHz, DMSO-d 6 ): 10.03 (s, 1H, ArNH), 7.59-7.50 (m, 4H, ArH), 7.39-7.17 (m, 8H, ArH), 7.04-6.78 (m, 10H, ArH), 4.80 (s, 4H, ArCH2N ), 4.04 (m, 2H, ArOCH2 ), 3.68-3.62 (m, 4H, ArNCH2 ), 3.15 (m, 8H, NCH2 ), 1.79 (br s, 6H , ArCH3 ), 1.56 (br, 8H, NCH2CH2 ), 1. 35-1.19 (m, 33H), 0.88 (t, J=7.0Hz, 12H, N(CH2)5CH3 ) .
 [合成例5]
合成例1において、アニオン成分として、C.I.アシッドレッド52 20.3g(0.035モル)の代わりに、C.I.アシッドブルー90 29.9g(0.035モル)を、カチオン成分として、テトラヘキシルアンモニウムブロミド 16.9g(0.039モル)の代わりに、テトラペンチルアンモニウムブロミド 14.8g(0.039モル)を使用した以外は同様にして、式(1)で表される化合物z-5を得た。同定の結果を下記に示す。
[Synthesis Example 5]
In Synthesis Example 1, C.I. I. Instead of 20.3 g (0.035 mol) of Acid Red 52, C.I. I. 29.9 g (0.035 mol) of Acid Blue 90 is used, and 14.8 g (0.039 mol) of tetrapentylammonium bromide is used instead of 16.9 g (0.039 mol) of tetrahexylammonium bromide as a cationic component. Compound z-5 represented by formula (1) was obtained in the same manner except that The identification results are shown below.
 H NMR(400MHz,DMSO-d):H NMR(400MHz,DMSO-d):10.03(s,1H,ArNH),7.59-7.50(m,4H,ArH),7.39-7.17(m,8H,ArH),7.04-6.78(m,10H,ArH),4.80(s,4H,ArCHN),4.04(m,2H,ArOCH),3.68-3.62(m,4H,ArNCH),3.18-3.14(m,8H,NCH),1.79(br s,6H,ArCH),1.61-1.54(m,8H,NCHCH),1.39-1.19(m,33H),0.89(t,J=7.0Hz,12H,N(CHCH)。 1 H NMR (400 MHz, DMSO-d 6 ): 1 H NMR (400 MHz, DMSO-d 6 ): 10.03 (s, 1 H, ArNH), 7.59-7.50 (m, 4H, ArH), 7.39-7.17 (m, 8H, ArH), 7.04-6.78 (m, 10H, ArH), 4.80 (s, 4H, ArCH 2 N), 4.04 (m, 2H , ArOCH 2 ), 3.68-3.62 (m, 4H, ArNCH 2 ), 3.18-3.14 (m, 8H, NCH 2 ), 1.79 (br s, 6H, ArCH 3 ), 1.61-1.54 (m, 8H, NCH 2 CH 2 ), 1.39-1.19 (m, 33H), 0.89 (t, J=7.0 Hz, 12H, N(CH 2 ) 4 CH3 ).
 [合成例6]
合成例1において、アニオン成分として、C.I.アシッドレッド52 20.3g(0.035モル)の代わりに、C.I.アシッドブルー83 28.9g(0.035モル)を使用した以外は同様にして、式(1)で表される化合物z-6を得た。同定の結果を下記に示す。
[Synthesis Example 6]
In Synthesis Example 1, C.I. I. Instead of 20.3 g (0.035 mol) of Acid Red 52, C.I. I. Compound z-6 represented by formula (1) was obtained in the same manner except that 28.9 g (0.035 mol) of Acid Blue 83 was used. The identification results are shown below.
 H NMR(400MHz,DMSO-d):9.68(s,1H,ArNH),7.60-7.50(m,4H,ArH),7.35-7.19(m,12H,ArH),7.07-6.97(m,8H,ArH),4.86(s,4H,ArCHN),4.03(q,J=6.9Hz,2H,ArOCH),3.71-3.69(m,4H,ArNCH),3.15(m,8H,NCH),1.56(br,8H,NCHCH),1.35-1.22(m,25H),0.88(t,J=7.0Hz,12H,N(CHCH)。 1 H NMR (400 MHz, DMSO-d 6 ): 9.68 (s, 1H, ArNH), 7.60-7.50 (m, 4H, ArH), 7.35-7.19 (m, 12H, ArH), 7.07-6.97 (m, 8H, ArH), 4.86 (s, 4H, ArCH2N ), 4.03 (q, J=6.9Hz, 2H, ArOCH2 ), 3 .71-3.69 (m, 4H, ArNCH 2 ), 3.15 (m, 8H, NCH 2 ), 1.56 (br, 8H, NCH 2 CH 2 ), 1.35-1.22 (m , 25H), 0.88 (t , J=7.0 Hz, 12H, N( CH2 ) 5CH3 ).
 [合成例7]
合成例1において、アニオン成分として、C.I.アシッドレッド52 20.3g(0.035モル)の代わりに、C.I.アシッドブルー1 19.1g(0.035モル)を使用した以外は同様にして、式(1)で表される化合物z-7を得た。同定の結果を下記に示す。
[Synthesis Example 7]
In Synthesis Example 1, C.I. I. Instead of 20.3 g (0.035 mol) of Acid Red 52, C.I. I. Compound z-7 represented by formula (1) was obtained in the same manner except that 19.1 g (0.035 mol) of Acid Blue 1 was used. The identification results are shown below.
 H NMR(400MHz,DMSO-d):8.19(d,J=1.6Hz,1H,ArH),7.62(dd,J=8.0Hz,J=1.6Hz,1H,ArH),7.29(d,J=9.2Hz,4H,ArH),6.98-6.91(m,5H,ArH),3.62(q,J=6.9Hz,ArNCH),3.15(m,8H,NCH),1.56(br,8H,NCHCH),1.29(br,24H,N(CH(CH),1.20(t,J=7.0Hz,12H,ArNCHCH),0.88(t,J=7.0Hz,12H,N(CHCH)。 1 H NMR (400 MHz, DMSO- d6 ): 8.19 (d, J = 1.6 Hz, 1 H, ArH), 7.62 (dd, J = 8.0 Hz, J = 1.6 Hz, 1 H , ArH), 7.29 (d, J = 9.2 Hz, 4H, ArH), 6.98-6.91 (m, 5H, ArH), 3.62 (q, J = 6.9 Hz, ArNCH 2 ), 3.15(m, 8H, NCH2 ), 1.56(br, 8H, NCH2CH2 ), 1.29(br, 24H, N( CH2 ) 2 ( CH2 ) 3 ), 1 .20 (t, J=7.0 Hz, 12H, ArNCH2CH3 ), 0.88 (t , J=7.0 Hz, 12H, N( CH2 ) 5CH3 ) .
 [合成例8]
合成例1において、カチオン成分として、テトラヘキシルアンモニウムブロミド 16.9g(0.039モル)の代わりに、テトラデシルアンモニウムブロミド 21.5g(0.039モル)を使用した以外は同様にして、化合物z-8を得た。同定の結果を下記に示す。
[Synthesis Example 8]
In the same manner as in Synthesis Example 1, compound z -8 was obtained. The identification results are shown below.
 H NMR(400MHz,DMSO-d):8.26(d,J=2.0Hz,1H,ArH),7.72(dd,J1=8.0Hz,J2=2.0Hz,1H,ArH),7.14(d,J=8.0Hz,1H,ArH),7.03(s,4H,ArH),6.92(s,2H,ArH),3.66-3.61(m,8H,ArNCH),3.18-3.14(m,8H,NCH),1.61-1.54(m,8H,NCHCH),1.38-1.15(m,68H),0.86(t,J=7.0Hz,12H,N(CHCH)。 1 H NMR (400 MHz, DMSO-d 6 ): 8.26 (d, J = 2.0 Hz, 1 H, ArH), 7.72 (dd, J = 8.0 Hz, J = 2.0 Hz, 1 H, ArH ), 7.14 (d, J = 8.0Hz, 1H, ArH), 7.03 (s, 4H, ArH), 6.92 (s, 2H, ArH), 3.66-3.61 (m , 8H, ArNCH 2 ), 3.18-3.14 (m, 8H, NCH 2 ), 1.61-1.54 (m, 8H, NCH 2 CH 2 ), 1.38-1.15 (m , 68H), 0.86 (t , J=7.0 Hz, 12H, N( CH2 ) 9CH3 ).
 [合成例9]
合成例1において、カチオン成分として、デシルアンモニウムブロミド 16.9g(0.039モル)の代わりに、デシルトリペンチルアンモニウムブロミド 14.7g(0.039モル)を使用した以外は同様にして、化合物z-9を得た。同定の結果を下記に示す。
[Synthesis Example 9]
Compound z was prepared in the same manner as in Synthesis Example 1, except that 14.7 g (0.039 mol) of decyltripentylammonium bromide was used instead of 16.9 g (0.039 mol) of decyl ammonium bromide as the cation component. -9 was obtained. The identification results are shown below.
 H NMR(400MHz,DMSO-d):8.26(d,J=2.0Hz,1H,ArH),7.72(dd,J1=8.0Hz,J2=2.0Hz,1H,ArH),7.14(d,J=8.0Hz,1H,ArH),7.03(s,4H,ArH),6.92(s,2H,ArH),3.66-3.61(m,8H,ArNCH),3.18-3.14(m,8H),1.61-1.54(m,8H),1.38-1.15(m,38H),0.91-0.84(m,12H)。 1 H NMR (400 MHz, DMSO-d 6 ): 8.26 (d, J = 2.0 Hz, 1 H, ArH), 7.72 (dd, J = 8.0 Hz, J = 2.0 Hz, 1 H, ArH ), 7.14 (d, J = 8.0Hz, 1H, ArH), 7.03 (s, 4H, ArH), 6.92 (s, 2H, ArH), 3.66-3.61 (m , 8H, ArNCH 2 ), 3.18-3.14 (m, 8H), 1.61-1.54 (m, 8H), 1.38-1.15 (m, 38H), 0.91- 0.84 (m, 12H).
 [合成例10]
合成例1において、カチオン成分として、テトラヘキシルアンモニウムブロミド 16.9g(0.039モル)の代わりに、テトラブチルアンモニウムブロミド 10.5g(0.039モル)を使用した以外は同様にして、化合物z-10を得た。同定の結果を下記に示す。
[Synthesis Example 10]
In the same manner as in Synthesis Example 1, compound z -10 was obtained. The identification results are shown below.
 H NMR(400MHz,DMSO-d):8.26(d,J=2.0Hz,1H,ArH),7.72(dd,J1=8.0Hz,J2=2.0Hz,1H,ArH),7.14(d,J=8.0Hz,1H,ArH),7.03(s,4H,ArH),6.92(s,2H,ArH),3.66-3.61(m,8H,ArNCH),3.18-3.14(m,8H,NCH),1.61-1.54(m,8H,NCHCH),1.38-1.15(m,20H),0.94(t,J=7.0Hz,12H,N(CHCH)。 1 H NMR (400 MHz, DMSO-d 6 ): 8.26 (d, J = 2.0 Hz, 1 H, ArH), 7.72 (dd, J = 8.0 Hz, J = 2.0 Hz, 1 H, ArH ), 7.14 (d, J = 8.0Hz, 1H, ArH), 7.03 (s, 4H, ArH), 6.92 (s, 2H, ArH), 3.66-3.61 (m , 8H, ArNCH 2 ), 3.18-3.14 (m, 8H, NCH 2 ), 1.61-1.54 (m, 8H, NCH 2 CH 2 ), 1.38-1.15 (m , 20H), 0.94 (t, J =7.0 Hz, 12H, N(CH2)3CH3 ) .
 [合成例11]
合成例1において、カチオン成分として、テトラヘキシルアンモニウムブロミド 16.9g(0.039モル)の代わりに、ヘキサデシルトリメチルアンモニウムブロミド 14.2g(0.039モル)を使用した以外は同様にして、化合物z-11を得た。同定の結果を下記に示す。
[Synthesis Example 11]
In Synthesis Example 1, compound z-11 was obtained. The identification results are shown below.
 H NMR(400MHz,DMSO-d):8.26(d,J=2.0Hz,1H,ArH),7.72(dd,J=8.0Hz,J=2.0Hz,1H,ArH),7.14(d,J=8.0Hz,1H,ArH),7.03(s,4H,ArH),6.92(s,2H,ArH),3.66-3.61(m,8H,ArNCH),3.27-3.22(m,2H,NCH),3.02(s,9H,NCH),1.70-1.62(m,2H,NCHCH),1.27-1.19(m,38H),0.85(t,J=7.0Hz,3H,N(CH15CH)。 1 H NMR (400 MHz, DMSO- d6 ): 8.26 (d, J = 2.0 Hz, 1 H, ArH), 7.72 (dd, J = 8.0 Hz, J = 2.0 Hz, 1 H , ArH), 7.14 (d, J = 8.0 Hz, 1H, ArH), 7.03 (s, 4H, ArH), 6.92 (s, 2H, ArH), 3.66-3.61 (m, 8H, ArNCH 2 ), 3.27-3.22 (m, 2H, NCH 2 ), 3.02 (s, 9H, NCH 3 ), 1.70-1.62 (m, 2H, NCH 2 CH 2 ), 1.27-1.19 (m, 38H), 0.85 (t, J=7.0 Hz, 3H, N(CH 2 ) 15 CH 3 ).
 合成例1~11で使用したアニオン成分及びカチオン成分を表1に示す。 Table 1 shows the anion components and cation components used in Synthesis Examples 1-11.
Figure JPOXMLDOC01-appb-T000018
Figure JPOXMLDOC01-appb-T000018
 [合成例12]
 三口フラスコに、2,2-ビス(3-アミノ-4-ヒドロキシフェニル)ヘキサフルオロプロパン(以下、BAHF)18.31g(0.05mol)、プロピレンオキシド17.4g(0.3mol)、アセトン100mLを秤量して溶解させた。ここに、アセトン10mLに塩化3-ニトロベンゾイル20.41g(0.11mol)を溶かした溶液を滴下した。滴下終了後、-15℃で4時間反応させ、その後室温に戻した。析出した白色固体をろ取し、50℃で真空乾燥させた。得られた固体30gを、300mLのステンレスオートクレーブに入れ、2-メトキシエタノール250mLに分散させ、5%パラジウム-炭素を2g加えた。ここに水素を風船で導入して、室温で2時間反応させた。2時間後、風船がこれ以上しぼまないことを確認した。反応終了後、ろ過して触媒であるパラジウム化合物を除去し、減圧留去させて濃縮し、下記構造のヒドロキシ基含有ジアミン化合物(HA)を得た。
[Synthesis Example 12]
2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (hereinafter referred to as BAHF) 18.31 g (0.05 mol), propylene oxide 17.4 g (0.3 mol), and acetone 100 mL are placed in a three-necked flask. Weighed and dissolved. A solution of 20.41 g (0.11 mol) of 3-nitrobenzoyl chloride dissolved in 10 mL of acetone was added dropwise thereto. After completion of the dropwise addition, the mixture was allowed to react at -15°C for 4 hours, and then returned to room temperature. The precipitated white solid was collected by filtration and vacuum dried at 50°C. 30 g of the obtained solid was placed in a 300 mL stainless steel autoclave, dispersed in 250 mL of 2-methoxyethanol, and 2 g of 5% palladium-carbon was added. Hydrogen was introduced here with a balloon and reacted at room temperature for 2 hours. After 2 hours, it was confirmed that the balloon had not deflated any more. After completion of the reaction, the palladium compound as a catalyst was removed by filtration and concentrated by distillation under reduced pressure to obtain a hydroxy group-containing diamine compound (HA) having the following structure.
Figure JPOXMLDOC01-appb-C000019
Figure JPOXMLDOC01-appb-C000019
 乾燥窒素気流下、HA15.1g(0.025モル)、BAHF3.66g(0.01モル)及び1,3-ビス(3-アミノプロピル)テトラメチルジシロキサン(以下、SiDA)0.62g(0.0025モル)をN-メチルピロリドン(NMP)200gに溶解した。ここに2,2-(3,4-ジカルボキシフェニル)ヘキサフルオロプロパン(以下、6FDA)22.2g(0.05モル)をNMP50gとともに加えて、40℃で1時間撹拌した。その後、3-アミノフェノール(以下、MAP)2.73g(0.025モル)を加え、40℃で1時間撹拌した。さらに、N,N-ジメチルホルムアミドジメチルアセタール(以下、DFA)11.9g(0.1モル)をNMP5gで希釈した溶液を投入後、40℃で2時間撹拌を続けた。撹拌終了後、溶液を水2Lに投入して、ポリマー固体の沈殿をろ過で集めた。さらに水2Lで3回洗浄を行い、集めたポリマー固体を50℃の真空乾燥機で72時間乾燥し、(A)アルカリ可溶性樹脂としてポリイミド前駆体樹脂a-1を得た。 Under a dry nitrogen stream, 15.1 g (0.025 mol) of HA, 3.66 g (0.01 mol) of BAHF and 0.62 g (0.01 mol) of 1,3-bis(3-aminopropyl)tetramethyldisiloxane (SiDA) .0025 mol) was dissolved in 200 g of N-methylpyrrolidone (NMP). 22.2 g (0.05 mol) of 2,2-(3,4-dicarboxyphenyl)hexafluoropropane (hereinafter referred to as 6FDA) was added together with 50 g of NMP, and the mixture was stirred at 40° C. for 1 hour. After that, 2.73 g (0.025 mol) of 3-aminophenol (hereinafter referred to as MAP) was added and stirred at 40° C. for 1 hour. Further, a solution prepared by diluting 11.9 g (0.1 mol) of N,N-dimethylformamide dimethylacetal (hereinafter referred to as DFA) with 5 g of NMP was added, and the mixture was stirred at 40° C. for 2 hours. After stirring was completed, the solution was poured into 2 L of water, and polymer solid precipitates were collected by filtration. Further, it was washed three times with 2 L of water, and the collected polymer solid was dried in a vacuum dryer at 50° C. for 72 hours to obtain (A) polyimide precursor resin a-1 as an alkali-soluble resin.
 [合成例13]
 乾燥窒素気流下、4,4’-[1-[4-[1-(4-ヒドロキシフェニル)-1-メチルエチル]フェニル]エチリデン]ビスフェノール(TrisP-PA)21.2g(0.05モル)と5-ナフトキノンジアジドスルホン酸クロリド26.8g(0.1モル)を1,4-ジオキサン450gに溶解させ、室温にした。ここに、1,4-ジオキサン50gと混合したトリエチルアミン12.7gを、系内が35℃以上にならないように滴下した。滴下後、40℃で2時間撹拌した。トリエチルアミン塩を濾過し、濾液を水に投入した。その後、析出した沈殿を濾過で集め、さらに1%塩酸水1Lで洗浄した。その後、さらに水2Lで2回洗浄した。この沈殿を真空乾燥機で乾燥し、下記式で表されるキノンジアジド化合物b-1を得た。
[Synthesis Example 13]
21.2 g (0.05 mol) of 4,4′-[1-[4-[1-(4-hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphenol (TrisP-PA) under dry nitrogen stream and 26.8 g (0.1 mol) of 5-naphthoquinonediazide sulfonyl chloride were dissolved in 450 g of 1,4-dioxane and allowed to cool to room temperature. 12.7 g of triethylamine mixed with 50 g of 1,4-dioxane was added dropwise thereto so that the inside of the system did not reach 35° C. or higher. After dropping, the mixture was stirred at 40°C for 2 hours. The triethylamine salt was filtered and the filtrate was poured into water. After that, the deposited precipitate was collected by filtration and washed with 1 L of 1% aqueous hydrochloric acid. After that, it was washed twice with 2 L of water. This precipitate was dried in a vacuum dryer to obtain a quinonediazide compound b-1 represented by the following formula.
 各実施例及び比較例に示した化合物を以下に示す。 The compounds shown in each example and comparative example are shown below.
Figure JPOXMLDOC01-appb-C000020
Figure JPOXMLDOC01-appb-C000020
 [実施例1]
黄色灯下、式(1)で表される化合物として合成例1で得た化合物z-1、(A)アルカリ可溶性樹脂として合成例12で得たポリイミド前駆体樹脂a-1、(B)感光性化合物として合成例13で得た化合物b-1、(C)熱発色性化合物として化合物c-1、その他添加剤として熱架橋剤d-1、溶剤としてγ-ブチロラクトン(GBL)及び乳酸エチル(EL)を表1に示す量を添加し、攪拌して溶解させ、組成物1を調製した。
[Example 1]
Under yellow light, the compound z-1 obtained in Synthesis Example 1 as the compound represented by formula (1), (A) the polyimide precursor resin a-1 obtained in Synthesis Example 12 as an alkali-soluble resin, (B) photosensitive compound b-1 obtained in Synthesis Example 13 as a chemical compound, compound c-1 as a thermochromic compound (C), thermal cross-linking agent d-1 as other additives, γ-butyrolactone (GBL) and ethyl lactate as a solvent ( EL) was added in the amount shown in Table 1 and dissolved by stirring to prepare composition 1.
 組成物1について、残膜率、開口寸法変化、信頼性の評価を行った。 For composition 1, we evaluated the residual film ratio, change in opening size, and reliability.
 [実施例2~11、比較例1~3]
実施例1と同様の手法で、組成物2~14を表2に記載の組成にて調製した。
実施例1と同様の手法で、組成物2~14を評価した。
[Examples 2 to 11, Comparative Examples 1 to 3]
Compositions 2 to 14 were prepared according to the compositions shown in Table 2 in the same manner as in Example 1.
Compositions 2-14 were evaluated in the same manner as in Example 1.
 [実施例12、13]
 組成物1および11について、冷凍保存安定性の評価を行った。
[Examples 12 and 13]
Compositions 1 and 11 were evaluated for frozen storage stability.
 各実施例及び比較例の樹脂組成物の組成及び評価結果を表2および表3に示す。 Tables 2 and 3 show the compositions and evaluation results of the resin compositions of Examples and Comparative Examples.
Figure JPOXMLDOC01-appb-T000021
Figure JPOXMLDOC01-appb-T000021
Figure JPOXMLDOC01-appb-T000022
Figure JPOXMLDOC01-appb-T000022
 式(1)で表される化合物を含まない組成物12~14では残膜率が低かった。本発明の式(1)で表される化合物を含有する樹脂組成物は、残膜率が高いことが確認された。 Compositions 12 to 14, which did not contain the compound represented by formula (1), had a low residual film rate. It was confirmed that the resin composition containing the compound represented by the formula (1) of the present invention has a high residual film rate.
 本発明の化合物、樹脂組成物、硬化物は、半導体素子の表面保護膜、層間絶縁膜、有機EEL素子の画素分割層、有機EL素子を用いた表示装置の駆動用TFT基板の平坦化膜、回路基板の配線保護絶縁膜、固体撮像素子のオンチップマイクロレンズや各種ディスプレイ・固体撮像素子用平坦化膜、及び回路基板用ソルダーレジストなどに好適に用いられる。 The compound, resin composition, and cured product of the present invention can be used as a surface protective film of a semiconductor device, an interlayer insulating film, a pixel division layer of an organic EEL device, a flattening film of a driving TFT substrate of a display device using an organic EL device, It is suitably used for wiring protective insulating films for circuit boards, on-chip microlenses for solid-state imaging devices, flattening films for various displays and solid-state imaging devices, and solder resists for circuit boards.
1:ガラス基板
2:第一電極
3:補助電極
4:画素分割層
5:有機EL層
6:第二電極
1: glass substrate 2: first electrode 3: auxiliary electrode 4: pixel division layer 5: organic EL layer 6: second electrode

Claims (19)

  1. 式(1)で表される化合物。
    Figure JPOXMLDOC01-appb-C000001
    (式(1)中、An-は式(2)又は式(3)で表されるn価のアニオンである。R~Rはそれぞれ独立して、炭素数5~10のアルキル基である。nは1~3の整数をとる。)
    Figure JPOXMLDOC01-appb-C000002
    (式(2)中、R~Rは、それぞれ独立に、水素原子又は置換基を有してもよい炭素数1~10の1価の炭化水素基を表す。R~R14は、それぞれ独立に、水素原子又は炭素数1~5の1価の炭化水素基を表す。R15~R18は、それぞれ独立に、水素原子、ハロゲン原子、-SOH、-SO 、-SONR1920、-COOH、-COO、-COOR21、-CONR2223、-OR24、-NR2526又は置換基を有していてもよい炭素原子数1~20の1価の炭化水素基を表す。R19~R26は、それぞれ独立に、水素原子又は置換基を有してもよい炭素原子数1~20の1価の炭化水素基を表す。R~RおよびR15~R18のうち、少なくとも1つは、-SO 若しくは-COOを有する炭素数1~10の1価の炭化水素基、-SO 又は-COOである。Xは-SO 又は-COOを表す。)
    Figure JPOXMLDOC01-appb-C000003
    (式(3)中、R27~R30はそれぞれ独立に、水素原子又は置換基を有してもよい炭素数1~20の1価の炭化水素基を表す。R31~R36は、それぞれ独立に水素原子又は炭素数1~5の1価の炭化水素基を表す。R37~R41は、それぞれ独立に、水素原子、ハロゲン原子、-SOH、-SO 、-SONR4243、-COOH、-COO、-COOR44、-CONR4546、-OR47、-NR4849又は置換基を有していてもよい炭素原子数1~20の1価の炭化水素基を表す。R37~R41のうち、互いに隣接するもの同士は、互いに結合し、環状構造を形成してもよい。R42~R49は、それぞれ独立に、水素原子又は置換基を有してもよい炭素原子数1~20の1価の炭化水素基を表す。R27~R30およびR37~R41のうち、少なくとも2つは-SO 若しくは-COOを有する炭素数1~20の1価の炭化水素基、-SO 又は-COOである。)
    A compound represented by formula (1).
    Figure JPOXMLDOC01-appb-C000001
    (In formula (1), A n- is an n-valent anion represented by formula (2) or formula (3). R 1 to R 4 each independently represent an alkyl group having 5 to 10 carbon atoms) where n is an integer from 1 to 3.)
    Figure JPOXMLDOC01-appb-C000002
    (In formula (2), R 5 to R 8 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms which may have a substituent. R 9 to R 14 are , each independently represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 5 carbon atoms, and R 15 to R 18 each independently represent a hydrogen atom, a halogen atom, —SO 3 H, —SO 3 , —SO 3 NR 19 R 20 , —COOH, —COO , —COOR 21 , —CONR 22 R 23 , —OR 24 , —NR 25 R 26 or optionally substituted carbon atoms 1 to 20 R 19 to R 26 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms which may have a substituent.R 5 At least one of R 8 and R 15 to R 18 is a monovalent hydrocarbon group having 1 to 10 carbon atoms having —SO 3 or —COO , —SO 3 or —COO .X represents —SO 3 or —COO .)
    Figure JPOXMLDOC01-appb-C000003
    (In Formula (3), R 27 to R 30 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms which may have a substituent. R 31 to R 36 are Each independently represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 5 carbon atoms, and R 37 to R 41 each independently represent a hydrogen atom, a halogen atom, —SO 3 H, —SO 3 , —SO 3 NR 42 R 43 , -COOH, -COO - , -COOR 44 , -CONR 45 R 46 , -OR 47 , -NR 48 R 49 or 1 having 1 to 20 carbon atoms which may have a substituent represents a valent hydrocarbon group, adjacent ones among R 37 to R 41 may be bonded to each other to form a cyclic structure, and R 42 to R 49 each independently represent a hydrogen atom or represents an optionally substituted monovalent hydrocarbon group having 1 to 20 carbon atoms, wherein at least two of R 27 to R 30 and R 37 to R 41 are —SO 3 or —COO is a monovalent hydrocarbon group having 1 to 20 carbon atoms, —SO 3 or —COO .)
  2. 式(1)において、R、R、RおよびRがすべて同一の置換基である、請求項1に記載の化合物。 2. The compound according to claim 1, wherein in formula (1), R1 , R2 , R3 and R4 are all the same substituents.
  3. 式(1)中のR、R、RおよびRのすべてが、炭素数5又は6のアルキル基である、請求項1又は2に記載の化合物。 3. The compound according to claim 1 or 2, wherein all of R1, R2 , R3 and R4 in formula (1) are alkyl groups having 5 or 6 carbon atoms.
  4. 350nm以上700nm以下の領域における最大吸収波長が、500nm以上700nm以下の領域のいずれかに存在する、請求項1又は2に記載の化合物。 3. The compound according to claim 1 or 2, wherein the maximum absorption wavelength in the range of 350 nm or more and 700 nm or less exists in any of the range of 500 nm or more and 700 nm or less.
  5. 請求項1に記載の化合物と、(A)アルカリ可溶性樹脂を含有する、樹脂組成物。 A resin composition comprising the compound according to claim 1 and (A) an alkali-soluble resin.
  6. 前記樹脂組成物中の有機カチオン種の総質量に占める、前記式(1)中のアンモニウムカチオン種の質量の割合が、50質量%以上100質量%以下である、請求項5に記載の樹脂組成物。 The resin composition according to claim 5, wherein the mass ratio of the ammonium cation species in the formula (1) to the total mass of the organic cation species in the resin composition is 50% by mass or more and 100% by mass or less. thing.
  7. 請求項1又は2に記載の化合物が、
    350nm以上700nm以下の領域において、500nm以上580nm未満の範囲に極大吸収波長を有する化合物と、
    350nm以上700nm以下の領域において、580nm以上700nm以下の範囲に極大吸収波長を有する化合物を含有する、請求項5又は6に記載の樹脂組成物。
    A compound according to claim 1 or 2,
    a compound having a maximum absorption wavelength in the range of 500 nm or more and less than 580 nm in the region of 350 nm or more and 700 nm or less;
    7. The resin composition according to claim 5, comprising a compound having a maximum absorption wavelength in the range of 580 nm to 700 nm in the range of 350 nm to 700 nm.
  8. 前記樹脂組成物中に含まれる全塩素原子と全臭素原子の総質量が、樹脂組成物の固形分の総質量に対して、150質量ppm以下である請求項5又は6に記載の樹脂組成物。 The resin composition according to claim 5 or 6, wherein the total mass of all chlorine atoms and all bromine atoms contained in the resin composition is 150 mass ppm or less with respect to the total mass of solid content of the resin composition. .
  9. 更に、(B)感光性化合物を含有する、請求項5又は6に記載の樹脂組成物。 7. The resin composition according to claim 5, further comprising (B) a photosensitive compound.
  10. 前記(B)感光性化合物が、キノンジアジド化合物を含有する、請求項9に記載の樹脂組成物。 10. The resin composition according to claim 9, wherein (B) the photosensitive compound contains a quinonediazide compound.
  11. 前記キノンジアジド化合物が、ポリヒドロキシ化合物のヒドロキシ基にキノンジアジドのスルホン酸がエステル結合した化合物を含有し、該ヒドロキシ基の全体100モル%に対して、キノンジアジドのスルホン酸とエステル結合しているヒドロキシ基の割合が、50モル%以上90モル%以下である、請求項10に記載の樹脂組成物。 The quinonediazide compound contains a compound in which the sulfonic acid of quinonediazide is ester-bonded to the hydroxy group of the polyhydroxy compound, and the hydroxy group ester-bonded to the sulfonic acid of quinonediazide accounts for 100 mol% of the total hydroxy groups. The resin composition according to claim 10, wherein the ratio is 50 mol% or more and 90 mol% or less.
  12. 更に、(C)熱発色性化合物を含有する、請求項5又は6に記載の樹脂組成物。 7. The resin composition according to claim 5, further comprising (C) a thermochromic compound.
  13. 前記(C)熱発色性化合物が、120℃以上の加熱により、350nm以上700nm以下の領域において、350nm以上500nm以下の領域のいずれかに最大吸収波長を生じる化合物を含有する、請求項12に記載の樹脂組成物。 13. The method according to claim 12, wherein the (C) thermochromogenic compound contains a compound that, when heated at 120° C. or higher, exhibits a maximum absorption wavelength in the range of 350 nm or more and 700 nm or less and in the range of 350 nm or more and 500 nm or less. of the resin composition.
  14. 前記(C)熱発色性化合物が、1つの芳香環内に少なくとも1つの芳香族C-H結合および少なくとも3つのフェノール性水酸基を有する芳香族炭化水素化合物を含有し、さらに、式(4)で表されるトリアジン環含有化合物を含有する、請求項12に記載の樹脂組成物。
    Figure JPOXMLDOC01-appb-C000004
    (式(4)中、R50~R55はそれぞれ独立に、水素原子、炭素原子数1~10のアルキル基、炭素原子数2~10のアルケニル基、炭素原子数2~10のアルケニルエーテル基、メチロール基、アルコキシメチル基を表す。ただし、R50~R55のうち、少なくとも1つはメチロール基またはアルコキシメチル基である。)
    The (C) thermochromic compound contains an aromatic hydrocarbon compound having at least one aromatic C-H bond and at least three phenolic hydroxyl groups in one aromatic ring, and further represented by formula (4) 13. The resin composition according to claim 12, containing the represented triazine ring-containing compound.
    Figure JPOXMLDOC01-appb-C000004
    (In formula (4), R 50 to R 55 are each independently a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkenyl ether group having 2 to 10 carbon atoms , a methylol group, and an alkoxymethyl group, provided that at least one of R 50 to R 55 is a methylol group or an alkoxymethyl group.)
  15. 前記(A)アルカリ可溶性樹脂が、ポリイミド、ポリイミド前駆体、ポリベンゾオキサゾール、ポリベンゾオキサゾール前駆体及びそれらの共重合体からなる群より選択される一種類以上を含有する、請求項5又は6に記載の樹脂組成物。 7. The method according to claim 5 or 6, wherein the (A) alkali-soluble resin contains at least one selected from the group consisting of polyimides, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, and copolymers thereof. The described resin composition.
  16. 有機EL表示装置の画素分割層の形成に用いられる、請求項5又は6に記載の樹脂組成物。 7. The resin composition according to claim 5, which is used for forming a pixel division layer of an organic EL display device.
  17. 請求項5に記載の樹脂組成物を硬化した硬化物。 A cured product obtained by curing the resin composition according to claim 5 .
  18. 請求項1に記載の化合物を含有する、硬化物。 A cured product containing the compound according to claim 1 .
  19. 請求項17又は18に記載の硬化物を具備する表示装置。 A display device comprising the cured product according to claim 17 or 18.
PCT/JP2022/029311 2021-08-04 2022-07-29 Compound, resin composition, cured product and display device WO2023013550A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020237039960A KR20240045164A (en) 2021-08-04 2022-07-29 Compounds, resin compositions, cured products, and display devices
JP2022552774A JPWO2023013550A1 (en) 2021-08-04 2022-07-29

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-127967 2021-08-04
JP2021127967 2021-08-04

Publications (1)

Publication Number Publication Date
WO2023013550A1 true WO2023013550A1 (en) 2023-02-09

Family

ID=85154769

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/029311 WO2023013550A1 (en) 2021-08-04 2022-07-29 Compound, resin composition, cured product and display device

Country Status (3)

Country Link
JP (1) JPWO2023013550A1 (en)
KR (1) KR20240045164A (en)
WO (1) WO2023013550A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09511059A (en) * 1994-03-25 1997-11-04 チバ−ガイギー アクチエンゲゼルシャフト Optical sensor for ion measurement
WO2009116575A1 (en) * 2008-03-19 2009-09-24 アークレイ株式会社 Stabilizer for color developer and use thereof
JP2013050707A (en) * 2011-08-02 2013-03-14 Nippon Kayaku Co Ltd Colored resin composition
US20190292421A1 (en) * 2018-03-23 2019-09-26 Sensor International, Llc Color changeable adhesives and methods of making such adhesives

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3508199B2 (en) 1994-03-25 2004-03-22 住友化学工業株式会社 Resist composition for black matrix, black matrix obtained by the composition
JPH10254129A (en) 1997-03-07 1998-09-25 Toray Ind Inc Photosensitive black paste and production of black matrix substrate using it
JP4360168B2 (en) 2002-10-01 2009-11-11 東レ株式会社 Positive photosensitive resin composition

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09511059A (en) * 1994-03-25 1997-11-04 チバ−ガイギー アクチエンゲゼルシャフト Optical sensor for ion measurement
WO2009116575A1 (en) * 2008-03-19 2009-09-24 アークレイ株式会社 Stabilizer for color developer and use thereof
JP2013050707A (en) * 2011-08-02 2013-03-14 Nippon Kayaku Co Ltd Colored resin composition
US20190292421A1 (en) * 2018-03-23 2019-09-26 Sensor International, Llc Color changeable adhesives and methods of making such adhesives

Also Published As

Publication number Publication date
KR20240045164A (en) 2024-04-05
JPWO2023013550A1 (en) 2023-02-09

Similar Documents

Publication Publication Date Title
TWI686425B (en) Resin, photosensitive resin composition, heat-resistant coating and manufacturing method thereof, and electronic parts and display devices using the heat-resistant coating
KR101251650B1 (en) Photosensitive Resin Composition
EP1365289B1 (en) Precursor composition for positive photosensitive resin and display made with the same
JP4677887B2 (en) Photosensitive resin composition
KR101065761B1 (en) Photosensitive resin precursor composition
JP4082041B2 (en) Positive photosensitive resin precursor composition, electronic component using the same, and display device
TWI485522B (en) Positive photosensitive resin composition, and photosensitive resin layer and display device using the same
JP2008039961A (en) Positive photosensitive resin composition and organic electroluminescence device using the same
JP4595412B2 (en) Photosensitive resin precursor composition
US6887643B2 (en) Photosensitive resin precursor composition
KR100943375B1 (en) Photosensitive Resin Composition and Method for Preparing Heat-Resistant Resin Film
JP2008040324A (en) Resin composition and method for producing patterned resin film using the same
WO2022039034A1 (en) Colored photosensitive resin composition, cured object, display device, and method for producing cured object
JP4924013B2 (en) Positive photosensitive resin composition
WO2023013550A1 (en) Compound, resin composition, cured product and display device
TW202106760A (en) Photosensitive resin composition, photosensitive resin sheet, cured film, method for producing cured film, organic el display device and electronic component
JP2003005369A (en) Positive type photosensitive resin precursor composition
JP4396161B2 (en) Photosensitive resin precursor composition
JP2015114355A (en) Positive photosensitive resin composition
JP5617279B2 (en) Photosensitive resin composition
JP2005309032A (en) Positive photosensitive resin composition
JP5644476B2 (en) Photosensitive resin composition, cured film using the same, method for manufacturing semiconductor device, and semiconductor device
WO2023120352A1 (en) Photosensitive resin composition, cured object, cured object manufacturing method, organic el display device, and display device
WO2023013549A1 (en) Xanthene compound, resin composition, cured object, method for producing cured object, organic el display device, and display device
WO2024135186A1 (en) Photosensitive resin composition, cured product, organic el display device, display device, and phenol compound

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2022552774

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22852969

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE