WO2023013501A1 - 放熱部材および電子装置 - Google Patents

放熱部材および電子装置 Download PDF

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Publication number
WO2023013501A1
WO2023013501A1 PCT/JP2022/028969 JP2022028969W WO2023013501A1 WO 2023013501 A1 WO2023013501 A1 WO 2023013501A1 JP 2022028969 W JP2022028969 W JP 2022028969W WO 2023013501 A1 WO2023013501 A1 WO 2023013501A1
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Prior art keywords
diamond
copper
diamond particles
composite
particle size
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Ceased
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PCT/JP2022/028969
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English (en)
French (fr)
Japanese (ja)
Inventor
基 永沢
孝眞 野口
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Denka Co Ltd
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Denka Co Ltd
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Priority to JP2023540288A priority Critical patent/JP7623500B2/ja
Priority to US18/681,594 priority patent/US20240347415A1/en
Priority to CN202280054488.9A priority patent/CN117795664A/zh
Publication of WO2023013501A1 publication Critical patent/WO2023013501A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/05—Mixtures of metal powder with non-metallic powder
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/01—Alloys based on copper with aluminium as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/02—Alloys based on copper with tin as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/04—Alloys based on copper with zinc as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/254—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/258—Metallic materials

Definitions

  • the present invention relates to heat dissipation members and electronic devices.
  • Patent Document 1 regarding a composite material of metal matrix-thermal conductor particles, since such a composite material contains ceramic particles such as diamond particles and SiC particles, the surface of the composite material is polished to be flat. (Paragraph 0012).
  • the following heat dissipation member and electronic device are provided.
  • a copper-diamond composite comprising a plurality of diamond particles dispersed in a metal matrix containing copper; a metal film bonded to at least one surface of the copper-diamond composite; A heat dissipating member comprising At least one of the plurality of diamond particles is configured to be in contact with both the metal film and the metal matrix in at least one cross section of the heat dissipation member in the lamination direction, In the surface of the copper-diamond composite, the ratio of the exposed area of the diamond particles obtained from (the exposed area of the diamond particles / the area of the metal matrix) ⁇ 100% is 1% or more and 50% or less. Element. 2.
  • the heat dissipating member according to the plurality of diamond particles include first diamond particles in contact with both the metal film and the metal matrix, and second diamond particles entirely embedded in the metal matrix; A heat dissipating member configured such that at least one of the first diamond grains and at least one of the second diamond grains are in contact with each other. 3. 1. 3. The heat dissipating member according to any one of 2, A heat dissipating member, wherein the copper-diamond composite has a thermal conductivity of 600 W/m ⁇ K or more. 4. 1. ⁇ 3.
  • the heat dissipating member according to any one of When the particle size distribution of the diamond particles is measured using an image-type particle size distribution measuring device, in the volume particle size distribution of the sphericity of the diamond particles, the S50 of the sphericity at which the cumulative value is 50% is 0.75 or more. There is a heat dissipation component. 5. 1. ⁇ 4. The heat dissipating member according to any one of When the particle size distribution of the diamond particles is measured using an image-type particle size distribution measuring device, in the volume particle size distribution of the particle size of the diamond particles, the particle size D50 at which the cumulative value is 50% is 300 ⁇ m or less. Heat dissipation material. 6. 1. ⁇ 5. The heat dissipation member according to any one of and an electronic component provided on the heat dissipation member.
  • a heat dissipation member with excellent thermal conductivity and an electronic device using the same are provided.
  • FIG. 3 is a cross-sectional view of the heat radiating member of Example 1 in the stacking direction; FIG.
  • FIG. 1 is a schematic cross-sectional view showing an example of the configuration of a heat radiating member according to this embodiment.
  • the heat dissipation member 100 of this embodiment includes a copper-diamond composite 30 in which a plurality of diamond particles 20 are dispersed in a metal matrix 10 containing copper, and a metal bonded to at least one surface of the copper-diamond composite 30. a membrane 50;
  • the plurality of diamond particles 20 are arranged between the metal film 50 and the metal matrix. At least one first diamond grain (diamond grain 20a) in contact with both of 10 is included.
  • the first At least one or more diamond particles are present.
  • the diamond grains 20a straddling both layers make it possible to exhibit the heat conduction characteristic unique to diamond well over the composite and the metal film 50 . Thereby, the thermal conductivity of the heat radiating member 100 can be improved.
  • the upper limit of the ratio of the exposed area of the diamond particles 20a obtained from (the exposed area of the diamond particles 20a/the area of the metal matrix 10) ⁇ 100% is For example, it is 50% or less, preferably 40% or less, more preferably 30% or less.
  • the lower limit of the ratio of the exposed area of the diamond grains 20a is 1% or more, preferably 5% or more, preferably 10% or more.
  • the plurality of diamond particles 20 includes the first diamond particles (diamond particles 20a) that are in contact with both the metal matrix 10 and the metal film 50, and the second diamond particles that are entirely embedded in the metal matrix 10. It may include two diamond particles (diamond particles 20b), and at least one of the first diamond particles (diamond particles 20a) and at least one of the second diamond particles (diamond particles 20b) may be in contact with each other.
  • Such a connected structure may be composed of at least 2 or more, preferably 3 or more, more preferably 4 or more diamond grains.
  • the connection structure is confirmed in at least one cross section of the heat radiating member 100 in the thickness direction.
  • the film thickness of the metal film formed on the surface can be reduced, and as a result, the thermal conductivity of the entire heat dissipating member composed of the copper-diamond composite and the metal film can be improved. That is, if the surface of the copper-diamond composite is not smoothed, it is necessary to form a thick metal film in order to fill the large irregularities present on the surface. If it becomes, there is a possibility that the overall thermal conductivity may decrease.
  • the lower limit of the thermal conductivity of the heat radiating member 100 is preferably 600 W/m ⁇ K or more, more preferably 630 W/m ⁇ K or more, still more preferably 650 W/m ⁇ K or more. Thereby, the heat dissipation property of the heat dissipation member can be enhanced.
  • the upper limit of the thermal conductivity of the heat radiating member 100 is not particularly limited, but is preferably 950 W/m ⁇ K or less, more preferably 900 W/m ⁇ K or less, and even more preferably 870 W/m ⁇ K or less.
  • the heat dissipation member 100 includes a copper-diamond composite 30 and a metal film 50.
  • the copper-diamond composite 30 includes a metal matrix 10 containing copper and a plurality of diamond particles 20 present in the metal matrix 10 .
  • the lower limit of the thermal conductivity of the copper-diamond composite 30 is preferably 600 W/m ⁇ K or more, more preferably 630 W/m ⁇ K or more, still more preferably 650 W/m ⁇ K or more. Thereby, the heat dissipation property of the heat dissipation member can be enhanced.
  • the upper limit of the thermal conductivity of the copper-diamond composite 30 is not particularly limited. be.
  • the shape and size of the copper-diamond composite 30 can be appropriately set according to the application.
  • Examples of the shape of the copper-diamond composite 30 include flat plate-like, block-like, rod-like, and the like.
  • the metal matrix 10 may contain copper, and may contain other highly thermally conductive metals than copper. That is, the metal matrix 10 is composed of a copper phase and/or a copper alloy phase.
  • the main component in the metal matrix 10 is preferably copper from the viewpoint of thermal conductivity and cost.
  • the lower limit of the content of copper as the main component is preferably 50% by mass or more, more preferably 60% by mass or more, still more preferably 70% by mass or more, and particularly preferably 80% by mass or more in 100% by mass of the metal matrix 10. , and most preferably at least 90% by mass. This takes advantage of the good thermal conductivity of copper and copper alloys.
  • the same copper as the matrix can be used as the surface layer to ensure brazing properties and surface smoothness, and the formation of other surface coating layers can be omitted.
  • the upper limit of the content of copper, which is the main component is not particularly limited in 100% by mass of the metal matrix 10, but may be 100% by mass or less or 99% by mass or less.
  • highly thermally conductive metals include, for example, silver, gold, and aluminum. These may be used alone or in combination of two or more. When combining copper with other highly thermally conductive metals, alloys or composite materials formed of copper and other highly thermally conductive metals can be used. Note that the metal matrix 10 may be made of metal other than the highly thermally conductive metal as long as it does not impair the effects of the present invention.
  • examples of the copper alloy include CuAg, CuAl, CuSn, CuZr, and CrCu.
  • the metal matrix 10 is, for example, a sintered body of metal powder containing copper (and other photothermally conductive metals as necessary).
  • the metal matrix 10 is composed of a sintered body in which at least some of the plurality of diamond particles 20 are embedded.
  • the diamond particles 20 are in a state in which the plurality of particles are entirely embedded in the metal matrix 10, but at least a portion of one particle or a plurality of particles is exposed at the bonding interface 12 of the copper-diamond composite 30. It may be configured as
  • the diamond particles 20 include at least one of non-coated diamond particles that do not have a metal-containing coating layer on their surfaces and coated diamond particles that have a metal-containing coating layer on their surfaces. Coated diamond particles are more preferable from the viewpoint of improving adhesion and dispersibility between diamond and metal particles.
  • the lower limit of the volume ratio of diamond particles 20 in copper-diamond composite 30 is preferably 10% by volume or more, more preferably 20% by volume or more, and still more preferably 30% by volume or more. Thereby, the thermal conductivity of the copper-diamond composite 30 can be enhanced.
  • the upper limit of the volume ratio of the diamond particles 20 in the copper-diamond composite 30 is, for example, preferably 80% by volume or less, more preferably 70% by volume or less, and even more preferably 60% by volume or less.
  • the metal-containing coating layer in the coated diamond particles may contain molybdenum, tungsten, chromium, zirconium, hafnium, vanadium, niobium, tantalum, and alloys thereof. These may be used alone or in combination of two or more. Also, the metal-containing coating layer is configured to cover at least a portion or the entire surface of the particle.
  • the sphericity and particle diameter of diamond particles 20 are measured according to the following procedures.
  • the particle size distribution of the diamond particles 20 is measured using an image-type particle size distribution analyzer (eg, Morphologi 4 manufactured by Malvern).
  • Particle size distribution includes shape distribution and particle size distribution. From the obtained particle size distribution, a volume particle size distribution of sphericity and a volume particle size distribution of particle diameter are created. Then, in the volume particle size distribution of the sphericity of the diamond particles 20, a predetermined cumulative value of sphericity and a predetermined cumulative value of particle diameter are obtained.
  • sphericity and particle size are defined as follows. Circularity: Ratio of the circumference of the projected object and the circumference of the object Particle diameter: Maximum length at two points on the contour of the particle image
  • the lower limit of the sphericity S50 at which the cumulative value of the diamond particles 20 is 50%, measured according to the above procedure, is, for example, 0.75 or more, preferably 0.80 or more, more preferably 0.85 or more, and further Preferably it is 0.9 or more. This increases the packing degree of the diamond particles 20 and increases the thermal conductivity of the composite.
  • the upper limit of the sphericity S50 is not particularly limited, but may be, for example, 1.0 or less, or 0.99 or less.
  • the upper limit of the particle diameter D50 at which the cumulative value of the diamond particles 20 is 50%, measured according to the above procedure, is, for example, 300 ⁇ m or less, preferably 270 ⁇ m or less, more preferably 250 ⁇ m or less, further preferably 220 ⁇ m or less, especially It is preferably 200 ⁇ m or less, most preferably 180 ⁇ m or less. This increases the packing degree of the diamond particles 20 and increases the thermal conductivity of the composite.
  • the lower limit of the particle diameter D50 is not particularly limited, it may be, for example, 5 ⁇ m or more.
  • the upper limit of the flatness of the copper-diamond composite 30 calculated according to JIS B 0621:1984 is, for example, 40 ⁇ m or less, preferably 39 ⁇ m or less, more preferably 38 ⁇ m or less. Thereby, the adhesion between the composite and the metal film can be improved.
  • the lower limit of the above flatness is not particularly limited, but may be 1 ⁇ m or more.
  • the upper limit of the ten-point average height calculated in accordance with JIS B 0601:2013 of the surface of the diamond particles exposed on the surface of the copper-diamond composite 30 (joint interface 12) is, for example, 5 ⁇ m or less, preferably is 4 ⁇ m or less, more preferably 3 ⁇ m or less. Thereby, the adhesion between the composite and the metal film can be improved.
  • the lower limit of the ten-point average height of the diamond particle surface is not particularly limited, but may be 0.1 ⁇ m or more.
  • the metal film 50 may be formed on at least one surface of the copper-diamond composite 30, and may be formed on both surfaces of the flat copper-diamond composite 30, for example.
  • the metal film 50 may contain one or more selected from the group consisting of copper, silver, gold, aluminum, nickel, zinc, tin, and magnesium.
  • the metal film 50 contains the same metal as the main component metal in the metal matrix 10, and preferably contains at least copper or a copper alloy.
  • the content of copper, which is the main component, in 100% by mass of the metal film 50 is preferably 50% by mass or more, more preferably 60% by mass or more, still more preferably 70% by mass or more, particularly preferably 80% by mass or more, and most preferably Preferably, it is 90% by mass or more.
  • the upper limit of the content of copper, which is the main component is not particularly limited in 100% by mass of the metal film 50, but may be 100% by mass or less or 99% by mass or less.
  • the upper limit of the film thickness of the metal film 50 is preferably 150 ⁇ m or less, more preferably 120 ⁇ m or less, and still more preferably 100 ⁇ m or less. Thereby, the thermal conductivity of the heat radiating member can be increased.
  • the lower limit of the film thickness of the metal film 50 is preferably 10 ⁇ m or more, more preferably 15 ⁇ m or more, and even more preferably 20 ⁇ m or more. As a result, the strength of adhesion to the composite and the durability of itself can be enhanced.
  • the metal film 50 is obtained by, for example, a sputtering method or a plating method.
  • the average crystal grain size of the metal in the metal film 50 is preferably 5 nm or more and 50 nm or less, more preferably 10 nm or more and 40 nm or less, and still more preferably 20 nm or more and 30 nm or less.
  • the average grain size is measured with a transmission electron microscope (TEM).
  • the electronic device of the present embodiment includes the above heat dissipation member and an electronic component provided on the heat dissipation member.
  • Examples of electronic components include semiconductor elements.
  • Specific examples of semiconductor elements include power semiconductors, image display elements, microprocessor units, laser diodes, and the like.
  • the heat dissipation member is used for heat sinks, heat spreaders, etc.
  • the heat sink dissipates heat generated during operation of the semiconductor element to an external space, and the heat spreader transfers the heat generated by the semiconductor element to other members.
  • the electronic component may be installed directly on the heat dissipation member or indirectly via a ceramic substrate or the like.
  • An example of a method for manufacturing a heat dissipating member includes a raw material mixing process, a sintering process, a smoothing process, and a film forming process.
  • metal powder containing copper such as copper powder and diamond particles are mixed to obtain a mixture.
  • Various dry and wet methods can be applied to mixing the raw material powders, and a dry mixing method may also be used.
  • a mixture of metal powder and diamond particles is fired to obtain a composite sintered body of copper and diamond particles.
  • the firing temperature can be appropriately selected according to the metal species contained in the metal powder, but in the case of copper powder, it is preferably 800° C. or higher and 1100° C. or lower, more preferably 850° C. or higher and 1000° C. or lower.
  • the firing temperature is preferably 800° C. or higher and 1100° C. or lower, more preferably 850° C. or higher and 1000° C. or lower.
  • the firing temperature By setting the firing temperature to 800° C. or higher, the copper-diamond composite is densified and the desired thermal conductivity is obtained.
  • the sintering temperature By setting the sintering temperature to 1100° C. or less, deterioration due to graphitization of the interfaces of the diamond particles can be suppressed, and a decrease in the inherent thermal conductivity of diamond can be prevented.
  • the firing time is not particularly limited, but is preferably 5 minutes or more and 3 hours or less, more preferably 10 minutes or more and 2 hours or less.
  • the firing time is preferably 5 minutes or more and 3 hours or less, more preferably 10 minutes or more and 2 hours or less.
  • the copper-diamond composite is densified and the desired thermal conductivity is obtained.
  • the firing time is set to 3 hours or less, carbide formation and film thickness increase occur between the diamond in the coated diamond particles and the metal coating the surface, resulting in a decrease in thermal conductivity and a difference in coefficient of linear expansion due to phonon scattering. It is possible to suppress the cracks caused by In addition, the productivity of the complex can be increased.
  • the sintering step either the normal pressure sintering method or the pressure sintering method may be used, but the pressure sintering method is preferable in order to obtain a dense composite.
  • pressure sintering methods include hot press sintering, spark plasma sintering (SPS), and hot isostatic pressure sintering (HIP).
  • SPS spark plasma sintering
  • HIP hot isostatic pressure sintering
  • the pressure is preferably 10 MPa or higher, more preferably 30 MPa or higher.
  • the pressure is preferably 100 MPa or less.
  • the pressure By setting the pressure to 100 MPa or less, it is possible to prevent the diamond from cracking, resulting in an increase in the diamond interface and a decrease in adhesion between the crushed diamond surface and the metal, and a decrease in the original thermal conductivity of the diamond. .
  • the smoothing step at least part of the surface of the composite sintered body is ground and polished to obtain a copper-diamond composite.
  • a metal film is formed on at least part of the surface of the smoothed copper-diamond composite.
  • a general method such as a sputtering method, a plating method, or a pressurized co-firing method using copper foil may be adopted, but a sputtering method may be used to form a thin film. . Also, at least part of the surface of the metal film may be ground and polished. This can improve the surface smoothness of the metal film after the film formation process.
  • an annealing step may be added between the firing step and the smoothing step.
  • the copper-diamond composite may be subjected to processing such as shape processing and perforation processing.
  • Example 1 Copper powder and diamond particles (Mo coat) were weighed to a ratio of 50% by volume:50% by volume, and the weighed powders were uniformly mixed in a V-type mixer to obtain a mixture (raw material mixing step). Subsequently, using an SPS sintering device, the obtained mixture was filled in a mold and heat-sintered at 900° C. for 1 hour under a pressure condition of 30 MPa to disperse a plurality of diamond particles in the copper matrix. A disk-shaped composite sintered body was obtained (sintering step).
  • the particle size distribution (shape distribution/particle size distribution) of the diamond particles was measured using an image-type particle size distribution analyzer (Morphologi 4, manufactured by Malvern).
  • image-type particle size distribution analyzer Malvern
  • the sphericity S 50 at which the cumulative value is 50%, and the particle diameter D 50 at which the cumulative value is 50% in the volume particle size distribution of the diamond particles were determined. These values are the average values of the values measured twice.
  • Sphericity and particle size were defined as follows.
  • Circularity ratio of the circumference of the object to the circumference with the same area as the projected object
  • Particle diameter maximum length at two points on the contour of the particle image
  • Both surfaces of the obtained composite sintered body were smoothed by surface grinding and polishing using a #400 whetstone to obtain a copper-diamond composite (ground composite sintered body) having an outer diameter of 30 mm ⁇ and a thickness of 3 mm. (smoothing step).
  • the content of diamond particles in the copper-diamond composite was 50.8% by volume. Observation and measurement of the flatness of one of the smoothed surfaces of the copper-diamond composite (surface area extending from the copper matrix to the diamond particles) with a digital microscope (VHX-8000, manufactured by Keyence) bottom. The flatness calculated according to JIS B 0621:1984 was 30.1 ⁇ m. In addition, the ten-point average height of the exposed diamond particle surface (ten-point average height Rz of the diamond surface) calculated in accordance with JIS B 0601:2013 on the surface of the copper-diamond composite is 1. was 5 ⁇ m.
  • the thermal conductivity of the copper-diamond composite was measured by a laser flash method and found to be 753 W/m ⁇ K. In addition, the measurement by the laser flash method was performed at room temperature with a carbon coating applied to the sample surface.
  • a Cu film having a thickness of 30 ⁇ m was formed on each of both surfaces of the copper-diamond composite by a sputtering method to obtain a heat dissipating member composed of Cu film/copper-diamond composite/Cu film (formed membrane process).
  • a heat dissipating member composed of Cu film/copper-diamond composite/Cu film (formed membrane process).
  • the average grain size of the Cu film in the heat dissipation member was 26 nm.
  • the crystal grain size was calculated from the number of crystal grains within 1 ⁇ m 2 from the structure obtained by a transmission electron microscope.
  • FIG. 2 shows a cross-sectional SEM image of the heat dissipating member of Example 1 in the thickness direction (the stacking direction of the composite and the Cu film).
  • the existence of a plurality of first diamond grains in contact with both the copper phase (metal matrix) and the Cu film (metal film) in the copper-diamond composite was confirmed.
  • a connecting structure was confirmed in which the second diamond grains whose entire periphery was embedded in the copper phase of the composite and the first diamond partially exposed from the composite were in contact with each other.
  • Examples 2 to 6 Comparative Examples 1 and 2
  • a composite and a heat dissipation member were obtained in the same manner as in Example 1, except that the particle size and sphericity of the diamond particles in Table 1 were changed, and the grinding/polishing conditions were changed to those described in the remarks.
  • the same evaluation as in Example 1 was performed on the obtained composite and heat dissipation member.
  • the presence of a plurality of the first diamond particles, the presence of the second diamond particles and the connecting structure was confirmed. .

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PCT/JP2022/028969 2021-08-06 2022-07-27 放熱部材および電子装置 Ceased WO2023013501A1 (ja)

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JP2023540288A JP7623500B2 (ja) 2021-08-06 2022-07-27 放熱部材および電子装置
US18/681,594 US20240347415A1 (en) 2021-08-06 2022-07-27 Heat dissipation member and electronic device
CN202280054488.9A CN117795664A (zh) 2021-08-06 2022-07-27 散热构件和电子装置

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008085096A (ja) * 2006-09-28 2008-04-10 Kyocera Corp 放熱部材およびこれを用いた電子部品収納用パッケージおよび電子装置
JP2013098491A (ja) * 2011-11-04 2013-05-20 Sumitomo Electric Ind Ltd ヒートシンク、ヒートシンクを作製する方法、半導体装置、半導体モジュール
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