WO2023008176A1 - Fluorinated arylsulfonate polymer compound and use thereof - Google Patents
Fluorinated arylsulfonate polymer compound and use thereof Download PDFInfo
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- WO2023008176A1 WO2023008176A1 PCT/JP2022/027373 JP2022027373W WO2023008176A1 WO 2023008176 A1 WO2023008176 A1 WO 2023008176A1 JP 2022027373 W JP2022027373 W JP 2022027373W WO 2023008176 A1 WO2023008176 A1 WO 2023008176A1
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- group
- charge
- transporting
- carbon atoms
- fluorinated
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- 229920000642 polymer Polymers 0.000 title claims abstract description 66
- 150000001875 compounds Chemical class 0.000 title claims abstract description 62
- 125000005228 aryl sulfonate group Chemical group 0.000 title abstract description 3
- 239000000126 substance Substances 0.000 claims abstract description 55
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 37
- 125000003118 aryl group Chemical group 0.000 claims abstract description 34
- 239000002019 doping agent Substances 0.000 claims abstract description 29
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- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 5
- 229910052783 alkali metal Chemical group 0.000 claims abstract description 4
- 150000001340 alkali metals Chemical group 0.000 claims abstract description 4
- 125000006367 bivalent amino carbonyl group Chemical group [H]N([*:1])C([*:2])=O 0.000 claims abstract description 4
- 125000006297 carbonyl amino group Chemical group [H]N([*:2])C([*:1])=O 0.000 claims abstract description 4
- 239000002966 varnish Substances 0.000 claims description 60
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- 230000005525 hole transport Effects 0.000 claims description 11
- 125000001624 naphthyl group Chemical group 0.000 claims description 7
- 150000004982 aromatic amines Chemical class 0.000 claims description 6
- 238000005401 electroluminescence Methods 0.000 claims description 4
- 125000000962 organic group Chemical group 0.000 claims description 4
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- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 7
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- KYWIYKKSMDLRDC-UHFFFAOYSA-N undecan-2-one Chemical compound CCCCCCCCCC(C)=O KYWIYKKSMDLRDC-UHFFFAOYSA-N 0.000 description 1
- 125000003774 valeryl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
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- H10K50/17—Carrier injection layers
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Abstract
Description
正孔注入層の形成方法は、蒸着法に代表されるドライプロセスと、スピンコート法に代表されるウェットプロセスとに大別され、これら各プロセスを比べると、ウェットプロセスの方が大面積に平坦性の高い薄膜を効率的に製造できる。それゆえ、有機ELディスプレイの大面積化が進められている現在、ウェットプロセスで形成可能な正孔注入層が望まれており、ウェットプロセスで成膜可能な正孔注入材料に関する技術の報告がなされている(特許文献1)。 Organic functional films made of organic compounds are used as light-emitting layers and charge injection layers in organic electroluminescence (hereinafter referred to as organic EL) devices. In particular, the hole-injecting layer carries out charge transfer between the anode and the hole-transporting layer or the light-emitting layer, and plays an important role in achieving low-voltage driving and high luminance of the organic EL device.
The method of forming the hole injection layer is broadly divided into a dry process typified by vapor deposition and a wet process typified by spin coating. It is possible to efficiently manufacture a thin film with high resistance. Therefore, at present, where organic EL displays are becoming larger in area, there is a demand for a hole injection layer that can be formed by a wet process, and a technology related to a hole injection material that can be formed by a wet process has been reported. (Patent Document 1).
1. 下記式(1)で表される繰り返し単位を含むことを特徴とするフッ素化アリールスルホン酸ポリマー化合物、
2. さらに下記式(2)で表される繰り返し単位を含む1のフッ素化アリールスルホン酸ポリマー化合物、
3. 前記R’が、フッ化アリール基である2のフッ素化アリールスルホン酸ポリマー化合物、
4. 前記ArFが、パーフルオロアリーレン基である1~3のいずれかのフッ素化アリールスルホン酸ポリマー化合物、
5. 前記ArFが、テトラフルオロフェニレン基である4のフッ素化アリールスルホン酸ポリマー化合物、
6. 前記ArSが、環上に2つ以上の前記SO3R基を有するアリール基である1~5のいずれかのフッ素化アリールスルホン酸ポリマー化合物、
7. 前記ArSが、環上に2つ以上の前記SO3R基を有するナフチル基である6のフッ素化アリールスルホン酸ポリマー化合物、
8. 前記Xが、Oである1~7のいずれかのフッ素化アリールスルホン酸ポリマー化合物、
9. 1~8のいずれかのフッ素化アリールスルホン酸ポリマー化合物からなるドーパント物質、
10. 電荷輸送性物質と、9のドーパント物質と、溶媒とを含む電荷輸送性ワニス、
11. 前記電荷輸送性物質が、アリールアミン誘導体またはチオフェン誘導体である10の電荷輸送性ワニス、
12. 10または11の電荷輸送性ワニスから得られた電荷輸送性薄膜、
13. 12の電荷輸送性薄膜を備える電子素子、
14. 12の電荷輸送性薄膜を備える有機エレクトロルミネッセンス素子、
15. 前記電荷輸送性薄膜が、正孔注入層または正孔輸送層である14の有機エレクトロルミネッセンス素子
を提供する。 That is, the present invention
1. a fluorinated arylsulfonic acid polymer compound comprising a repeating unit represented by the following formula (1);
2. Furthermore, one fluorinated arylsulfonic acid polymer compound containing a repeating unit represented by the following formula (2),
3. 2 fluorinated arylsulfonic acid polymer compound, wherein R′ is a fluorinated aryl group;
4. The fluorinated arylsulfonic acid polymer compound according to any one of 1 to 3, wherein the Ar F is a perfluoroarylene group;
5. The fluorinated arylsulfonic acid polymer compound of 4, wherein said Ar F is a tetrafluorophenylene group;
6. The fluorinated arylsulfonic acid polymer compound of any one of 1 to 5, wherein said Ar S is an aryl group having two or more said SO 3 R groups on the ring;
7. The fluorinated arylsulfonic acid polymer compound of 6, wherein said Ar S is a naphthyl group having two or more said SO 3 R groups on the ring;
8. The fluorinated arylsulfonic acid polymer compound according to any one of 1 to 7, wherein X is O;
9. a dopant substance comprising a fluorinated arylsulfonic acid polymer compound according to any one of 1 to 8;
10. a charge-transporting varnish comprising a charge-transporting substance, nine dopant substances, and a solvent;
11. 10 charge-transporting varnishes, wherein the charge-transporting substance is an arylamine derivative or a thiophene derivative;
12. a charge-transporting thin film obtained from the charge-transporting varnish of 10 or 11;
13. an electronic device comprising 12 charge-transporting thin films;
14. an organic electroluminescence device comprising 12 charge-transporting thin films;
15. Provide 14 organic electroluminescent devices wherein the charge-transporting thin film is a hole-injecting layer or a hole-transporting layer.
また、本発明のフッ素化アリールスルホン酸ポリマー化合物を含む薄膜は、上層塗布性が良好である。
このような特性を有する本発明のフッ素化アリールスルホン酸ポリマー化合物は、有機EL素子をはじめとする電子素子用薄膜、特に有機ELディスプレイ用薄膜の製造の際のドーパント物質として好適に用いることができる。 When the fluorinated arylsulfonic acid polymer compound of the present invention is used together with a charge-transporting substance as a dopant substance, it provides a charge-transporting thin film with excellent electrical characteristics, and an organic EL device provided with the thin film exhibits excellent characteristics. In particular, it has excellent life performance.
In addition, the thin film containing the fluorinated arylsulfonic acid polymer compound of the present invention has good upper layer coatability.
The fluorinated arylsulfonic acid polymer compound of the present invention having such properties can be suitably used as a dopant substance in the production of thin films for electronic devices such as organic EL devices, particularly thin films for organic EL displays. .
[1]フッ素化アリールスルホン酸ポリマー化合物
本発明に係るフッ素化アリールスルホン酸ポリマー化合物は、下記式(1)で表される繰り返し単位を含むことを特徴とする。 The present invention will be described in more detail below.
[1] Fluorinated Arylsulfonic Acid Polymer Compound The fluorinated arylsulfonic acid polymer compound according to the present invention is characterized by containing a repeating unit represented by the following formula (1).
ArFのフッ化アリーレン基は、アリーレン基上の少なくとも1つの水素原子がフッ素原子で置換されたものであれば特に限定はないが、残りの水素原子の少なくとも1つがスルホ基以外の電子吸引基で置換されていることが好ましい。
電子吸引基としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子等のハロゲン原子;ニトロ基;シアノ基;アシル基;カルボキシ基;カルボン酸エステル基;ホルミル基、アセチル基等のアシル基などが挙げられる。
特にArFのフッ化アリーレン基は、2つ以上のフッ素原子で置換されたアリーレン基が好ましく、パーフルオロアリーレン基がより好ましい。 In Formula (1), Ar F represents a fluorinated arylene group.
The fluorinated arylene group of Ar F is not particularly limited as long as at least one hydrogen atom on the arylene group is substituted with a fluorine atom, but at least one of the remaining hydrogen atoms is an electron-withdrawing group other than a sulfo group. is preferably substituted with
Examples of electron-withdrawing groups include halogen atoms such as fluorine, chlorine, bromine and iodine atoms; nitro group; cyano group; acyl group; carboxy group; mentioned.
In particular, the fluorinated arylene group of Ar F is preferably an arylene group substituted with two or more fluorine atoms, more preferably a perfluoroarylene group.
したがって、ArFとしては、テトラフルオロフェニレン基が好ましく、2,3,5,6-テトラフルオロ-1,4-フェニレン基がより好ましい。 Although the number of carbon atoms in the arylene group constituting Ar F is not particularly limited, it preferably has 6 to 20 carbon atoms, more preferably 6 to 16 carbon atoms. Specific examples thereof include 1,4-phenylene, 1,3-phenylene, 1,2-phenylene, 1,5-naphthylene, 1,7-naphthylene, 1,8-naphthylene, 2,6-naphthylene, 2, Examples include 7-naphthylene, 4,4'-biphenylylene, anthracenyl group and the like, with phenylene group being preferred, and 1,4-phenylene group being more preferred.
Therefore, Ar F is preferably a tetrafluorophenylene group, more preferably a 2,3,5,6-tetrafluoro-1,4-phenylene group.
より一層好適なフッ素化アリールスルホン酸ポリマー化合物としては、下記式(1-3)で示されるものが挙げられる。
More preferred fluorinated arylsulfonic acid polymer compounds include those represented by the following formula (1-3).
ArSを構成するアリール基の炭素数に特に制限はないが、炭素数6~30が好ましく、炭素数6~20がより好ましく、炭素数6~12がより一層好ましい。その具体例としては、フェニル、1-ナフチル、2-ナフチル、1-アントリル、2-アントリル、9-アントリル、1-フェナントリル、2-フェナントリル、3-フェナントリル、4-フェナントリル、9-フェナントリル基等が挙げられるが、ナフチル基が好ましく、1-ナフチル基がより好ましい。
また、ArSが有するSO3R基の数は、1つ以上であればよいが、2~4個が好ましく、2個がより好ましい。
好適なArSとしては、下記式(ArS-1)~(ArS-6)で示されるものが挙げられる。 Ar S represents an aryl group having at least one SO 3 R group on the ring, and R represents a hydrogen atom or an alkali metal atom such as Li, Na, K, etc., preferably a hydrogen atom.
Although the number of carbon atoms in the aryl group constituting Ar S is not particularly limited, it preferably has 6 to 30 carbon atoms, more preferably 6 to 20 carbon atoms, and even more preferably 6 to 12 carbon atoms. Specific examples thereof include phenyl, 1-naphthyl, 2-naphthyl, 1-anthryl, 2-anthryl, 9-anthryl, 1-phenanthryl, 2-phenanthryl, 3-phenanthryl, 4-phenanthryl and 9-phenanthryl groups. Among them, a naphthyl group is preferred, and a 1-naphthyl group is more preferred.
The number of SO 3 R groups possessed by Ar S may be 1 or more, preferably 2 to 4, more preferably 2.
Suitable Ar s include those represented by the following formulas (Ar s -1) to (Ar s -6).
この1価の有機基としては、1価炭化水素基、ヘテロアリール基、-COOR”基(R”は、水素原子または炭素数1~10のアルキル基を表す。)等が挙げられる。
1価炭化水素基の炭素数に特に制限はないが、炭素数1~20が好ましく、炭素数6~20がより好ましく、炭素数6~10がより一層好ましい。その具体例としては、メチル、エチル、n-プロピル、イソプロピル、n-ブチル、イソブチル、sec-ブチル、tert-ブチル、n-ペンチル、シクロペンチル、n-ヘキシル、シクロヘキシル、n-ヘプチル、n-オクチル、n-ノニル、n-デシル基等のアルキル基;フェニル、1-ナフチル、2-ナフチル、1-アントリル、2-アントリル、9-アントリル、1-フェナントリル、2-フェナントリル、3-フェナントリル、4-フェナントリル、9-フェナントリル基等のアリール基等が挙げられる。 In formula (2), R' represents a monovalent organic group.
Examples of the monovalent organic group include a monovalent hydrocarbon group, a heteroaryl group, a —COOR″ group (R″ represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms), and the like.
Although the number of carbon atoms in the monovalent hydrocarbon group is not particularly limited, it preferably has 1 to 20 carbon atoms, more preferably 6 to 20 carbon atoms, and even more preferably 6 to 10 carbon atoms. Specific examples include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, cyclopentyl, n-hexyl, cyclohexyl, n-heptyl, n-octyl, Alkyl groups such as n-nonyl and n-decyl groups; , aryl groups such as 9-phenanthryl group.
特に、ハロゲン原子で置換されたフェニル基が好ましく、フッ化フェニル基がより好ましく、パーフルオロフェニル基がより一層好ましい。 Among these, in consideration of improving the device characteristics and life characteristics of an organic EL device obtained by using the fluorinated arylsulfonic acid polymer compound of the present invention as a dopant substance, R′ is an aryl substituted with a halogen atom. groups are preferred, fluorinated aryl groups are more preferred, and perfluoroaryl groups are even more preferred.
In particular, a phenyl group substituted with a halogen atom is preferred, a fluorinated phenyl group is more preferred, and a perfluorophenyl group is even more preferred.
また、分子量分布(Mw/Mn)は、1~3が好ましく、1~2がより好ましい。
なお、この重量平均分子量は、ポリエチレンオキシドを標準試料としたゲルパーミエーションクロマトグラフィー(GPC)による測定値である。 The molecular weight of the fluorinated arylsulfonic acid polymer compound of the present invention is not particularly limited, but from the viewpoint of improving heat resistance and ensuring solubility in solvents, the weight average molecular weight Mw is preferably 1000 to 50000, more preferably 1500 to 10000. Preferably, 2000 to 10000 is even more preferable.
Further, the molecular weight distribution (Mw/Mn) is preferably 1-3, more preferably 1-2.
The weight average molecular weight is a value measured by gel permeation chromatography (GPC) using polyethylene oxide as a standard sample.
なお、この際、式(1A)で表されるモノマーは2種以上を組み合わせて用いてもよく、式(2A)で表されるモノマーは2種以上を組み合わせて用いてもよい。 The fluorinated arylsulfonic acid polymer compound of the present invention is prepared by reacting a monomer represented by the following formula (1A) and optionally a monomer represented by the following formula (2A) in the presence of a solvent and a radical polymerization initiator to form a known radical It can be obtained by polymerizing by a polymerization method.
At this time, two or more monomers represented by formula (1A) may be used in combination, and two or more monomers represented by formula (2A) may be used in combination.
ラジカル熱重合開始剤は、分解温度以上に加熱することにより、ラジカルを発生させる化合物である。このようなラジカル熱重合開始剤としては、例えば、ケトンパーオキサイド類(メチルエチルケトンパーオキサイド、シクロヘキサノンパーオキサイド等)、ジアシルパーオキサイド類(アセチルパーオキサイド、ベンゾイルパーオキサイド等)、ハイドロパーオキサイド類(過酸化水素、tert-ブチルハイドロパーオキサイド、クメンハイドロパーオキサイド等)、ジアルキルパーオキサイド類(ジ-tert-ブチルパーオキサイド、ジクミルパーオキサイド、ジラウロイルパーオキサイド等)、パーオキシケタール類(ジブチルパーオキシシクロヘキサン等)、アルキルパーエステル類(パーオキシネオデカン酸-tert-ブチルエステル、パーオキシピバリン酸-tert-ブチルエステル、パーオキシ2-エチルシクロヘキサン酸-tert-アミルエステル等)、過硫酸塩類(過硫酸カリウム、過硫酸ナトリウム、過硫酸アンモニウム等)、アゾ系化合物(アゾビスイソブチロニトリル、2,2’-ジ(2-ヒドロキシエチル)アゾビスイソブチロニトリル等)等が挙げられる。ラジカル熱重合開始剤は、1種単独で使用してもよく、2種以上を組み合わせて使用してもよい。 As the radical polymerization initiator, known compounds such as radical thermal polymerization initiators and radical photopolymerization initiators can be used.
A radical thermal polymerization initiator is a compound that generates radicals when heated to a decomposition temperature or higher. Examples of such radical thermal polymerization initiators include ketone peroxides (methyl ethyl ketone peroxide, cyclohexanone peroxide, etc.), diacyl peroxides (acetyl peroxide, benzoyl peroxide, etc.), hydroperoxides (peroxide Hydrogen, tert-butyl hydroperoxide, cumene hydroperoxide, etc.), dialkyl peroxides (di-tert-butyl peroxide, dicumyl peroxide, dilauroyl peroxide, etc.), peroxyketals (dibutylperoxycyclohexane etc.), alkyl peresters (peroxyneodecanoic acid -tert-butyl ester, peroxypivalic acid -tert-butyl ester, peroxy 2-ethylcyclohexanoic acid -tert-amyl ester, etc.), persulfates (potassium persulfate, sodium persulfate, ammonium persulfate, etc.), azo compounds (azobisisobutyronitrile, 2,2'-di(2-hydroxyethyl)azobisisobutyronitrile, etc.), and the like. The radical thermal polymerization initiator may be used singly or in combination of two or more.
本発明の電荷輸送性ワニスは、上述したフッ素化アリールスルホン酸ポリマー化合物からなるドーパント物質と、電荷輸送性物質と、溶媒とを含むものである。
なお、本発明において、電荷輸送性とは、導電性と同義であり、正孔輸送性と同義である。電荷輸送性ワニスとは、それ自体に電荷輸送性があるものでもよく、それにより得られる固体膜が電荷輸送性を有するものでもよい。 [2] Charge-Transporting Varnish The charge-transporting varnish of the present invention contains a dopant substance comprising the fluorinated arylsulfonic acid polymer compound described above, a charge-transporting substance, and a solvent.
In the present invention, the term "charge-transporting property" has the same meaning as conductivity and the same meaning as hole-transporting property. The charge-transporting varnish may itself have charge-transporting properties, or the solid film obtained therefrom may have charge-transporting properties.
その具体例としては、オリゴアニリン誘導体、N,N’-ジアリールベンジジン誘導体、N,N,N’,N’-テトラアリールベンジジン誘導体等のアリールアミン誘導体;オリゴチオフェン誘導体、チエノチオフェン誘導体、チエノベンゾチオフェン誘導体等のチオフェン誘導体;オリゴピロール等のピロール誘導体などの各種電荷輸送性化合物や、電荷輸送性オリゴマー、ポリチオフェン誘導体、ポリアニリン誘導体、ポリピロール誘導体等の電荷輸送性ポリマー等が挙げられ、これらの中でも、ポリチオフェン誘導体、アリールアミン誘導体が好ましい。 The charge-transporting substance is not particularly limited, and can be appropriately selected from charge-transporting compounds, charge-transporting oligomers, charge-transporting polymers, and the like used in the field of organic EL and the like.
Specific examples thereof include arylamine derivatives such as oligoaniline derivatives, N,N'-diarylbenzidine derivatives, N,N,N',N'-tetraarylbenzidine derivatives; oligothiophene derivatives, thienothiophene derivatives, and thienobenzothiophene. Thiophene derivatives such as derivatives; various charge-transporting compounds such as pyrrole derivatives such as oligopyrrole; charge-transporting polymers such as charge-transporting oligomers, polythiophene derivatives, polyaniline derivatives, and polypyrrole derivatives; Derivatives, arylamine derivatives are preferred.
炭素数6~20のアリールオキシ基の具体例としては、フェノキシ、アントラセノキシ、ナフトキシ、フェナントレノキシ、フルオレノキシ基等が挙げられる。
ハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子等が挙げられる。 Specific examples of aryl groups having 6 to 20 carbon atoms include phenyl, tolyl, 1-naphthyl, 2-naphthyl, 1-anthryl, 2-anthryl, 9-anthryl, 1-phenanthryl, 2-phenanthryl, 3-phenanthryl, Examples include 4-phenanthryl and 9-phenanthryl groups, with phenyl, tolyl and naphthyl being preferred.
Specific examples of aryloxy groups having 6 to 20 carbon atoms include phenoxy, anthracenoxy, naphthoxy, phenanthreoxy and fluorenoxy groups.
Halogen atoms include fluorine, chlorine, bromine, and iodine atoms.
Ra~Rdは、それぞれ独立に、水素原子、炭素数1~40のアルキル基、炭素数1~40のフルオロアルキル基、または炭素数6~20のアリール基を表し、これらの基の具体例としては上記で挙げた基と同様のものが挙げられる。
中でも、Ra~Rdは、それぞれ独立に、水素原子、炭素数1~8のアルキル基、炭素数1~8のフルオロアルキル基、またはフェニル基が好ましい。
Reは、水素原子、炭素数1~8のアルキル基、炭素数1~8のフルオロアルキル基、またはフェニル基であるが、水素原子、メチル基、プロピル基、またはブチル基が好ましい。
hは、1~5の整数が好ましく、1、2または3がより好ましい。 In the above formula (1), R 1 and R 2 are each independently a hydrogen atom, a fluoroalkyl group having 1 to 40 carbon atoms, an alkoxy group having 1 to 40 carbon atoms, —O[C(R a R b ) —C(R c R d )—O] h —R e , —OR f , or —O—Y—O— which is a sulfo group or formed by combining R 1 and R 2 is preferred.
Each of R a to R d independently represents a hydrogen atom, an alkyl group having 1 to 40 carbon atoms, a fluoroalkyl group having 1 to 40 carbon atoms, or an aryl group having 6 to 20 carbon atoms. Examples include those similar to those listed above.
Among them, R a to R d are each independently preferably a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, a fluoroalkyl group having 1 to 8 carbon atoms, or a phenyl group.
R e is a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, a fluoroalkyl group having 1 to 8 carbon atoms or a phenyl group, preferably a hydrogen atom, a methyl group, a propyl group or a butyl group.
h is preferably an integer of 1 to 5, more preferably 1, 2 or 3.
好ましくは、上記ポリチオフェン誘導体は、R1が、スルホ基であり、R2’が、炭素数1~40のアルコキシ基もしくは-O-[Z-O]h-Reである繰り返し単位を含むか、またはR1’およびR2’が結合して形成される-O-Y-O-である繰り返し単位を含む。
より好ましくは、上記ポリチオフェン誘導体は、R1’が、スルホ基であり、R2’が、-O[C(RaRb)-C(RcRd)-O]h-Reまたは-ORfである繰り返し単位を含む。
より一層好ましくは、上記ポリチオフェン誘導体は、R1’が、スルホ基であり、R2’が、-O[C(RaRb)-C(RcRd)-O]h-Reである繰り返し単位を含むか、またはR1’およびR2’が結合して形成される-O-Y-O-である繰り返し単位を含む。
さらに好ましくは、上記ポリチオフェン誘導体は、R1’が、スルホ基であり、R2’が、-O-CH2CH2-O-CH2CH2-O-CH3、-O-CH2CH2-O-CH2CH2-OH、もしくは-O-CH2CH2-OHである繰り返し単位を含むか、またはR1’およびR2’が互いに結合して、下記式(Y1)および(Y2)で表される基である繰り返し単位を含む。 For example, the polythiophene derivative according to a preferred embodiment of the present invention includes repeating units in which R 1 ' is a sulfo group and R 2 ' is other than a sulfo group, or R 1 and R 2 ' are linked. It contains repeating units that are —O—Y—O— formed by
Preferably, the polythiophene derivative contains a repeating unit in which R 1 is a sulfo group and R 2 ' is an alkoxy group having 1 to 40 carbon atoms or -O-[ZO] h -R e , or a repeating unit in which R 1 ' and R 2 ' are joined to form -O-Y-O-.
More preferably, in the above polythiophene derivative, R 1 ' is a sulfo group and R 2 ' is -O[C(R a R b )-C(R c R d )-O] h -R e or -OR f .
Even more preferably, in the above polythiophene derivative, R 1 ' is a sulfo group and R 2 ' is -O[C(R a R b )-C(R c R d )-O] h -R e or -O-Y-O- formed by combining R 1 ' and R 2 '.
More preferably, in the above polythiophene derivative, R 1 ' is a sulfo group and R 2 ' is -O-CH 2 CH 2 -O-CH 2 CH 2 -O-CH 3 , -O-CH 2 CH 2 --O--CH 2 CH 2 --OH or --O--CH 2 CH 2 --OH, or R 1 ' and R 2 ' are bonded to each other, and the following formulas (Y1) and ( It contains a repeating unit which is a group represented by Y2).
アミン付加体は、アミン自体またはその溶液にポリチオフェン誘導体を投入し、よく撹拌することで得ることができる。 Amine compounds that can be used to form amine adducts include methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, s-butylamine, t-butylamine, n-pentylamine, n-hexylamine. , n-heptylamine, n-octylamine, 2-ethylhexylamine, n-nonylamine, n-decylamine, n-undecylamine, n-dodecylamine, n-tridecylamine, n-tetradecylamine, n-penta Monoalkylamine compounds such as decylamine, n-hexadecylamine, n-heptadecylamine, n-octadecylamine, n-nonadecylamine, n-eicosanylamine; aniline, tolylamine, 1-naphthylamine, 2-naphthylamine, 1- anthrylamine, 2-anthrylamine, 9-anthrylamine, 1-phenanthrylamine, 2-phenanthrylamine, 3-phenanthrylamine, 4-phenanthrylamine, 9-phenanthrylamine Primary amine compounds such as monoarylamine compounds such as; N-ethylmethylamine, N-methyl-n-propylamine, N-methylisopropylamine, N-methyl-n-butylamine, N-methyl-s-butylamine, N -methyl-t-butylamine, N-methylisobutylamine, diethylamine, N-ethyl-n-propylamine, N-ethylisopropylamine, N-ethyl-n-butylamine, N-ethyl-s-butylamine, N-ethyl- t-butylamine, dipropylamine, Nn-propylisopropylamine, Nn-propyl-n-butylamine, Nn-propyl-s-butylamine, diisopropylamine, Nn-butylisopropylamine, Nt -butylisopropylamine, di(n-butyl)amine, di(s-butyl)amine, diisobutylamine, aziridine (ethyleneimine), 2-methylaziridine (propyleneimine), 2,2-dimethylaziridine, azetidine (trimethylene imine), 2-methylazetidine, pyrrolidine, 2-methylpyrrolidine, 3-methylpyrrolidine, 2,5-dimethylpyrrolidine, piperidine, 2,6-dimethylpiperidine, 3,5-dimethylpiperidine, 2,2,6, Dialkylamine compounds such as 6-tetramethylpiperidine, hexamethyleneimine, heptamethyleneimine, octamethyleneimine; phenylamine, N-phenyl-1-naphthylamine, N-phenyl-2-naphthylamine, 1,1′-dinaphthylamine, 2,2′-dinaphthylamine, 1,2′-dinaphthylamine, carbazole, 7H-benzo[c] Diarylamine compounds such as carbazole, 11H-benzo[a]carbazole, 7H-dibenzo[c,g]carbazole, 13H-dibenzo[a,i]carbazole; N-methylaniline, N-ethylaniline, Nn-propyl Aniline, N-isopropylaniline, Nn-butylaniline, Ns-butylaniline, N-isobutylaniline, N-methyl-1-naphthylamine, N-ethyl-1-naphthylamine, Nn-propyl-1- secondary amine compounds such as alkylarylamine compounds such as naphthylamine, indoline, isoindoline, 1,2,3,4-tetrahydroquinoline and 1,2,3,4-tetrahydroisoquinoline; N,N-dimethylethylamine, N, N-dimethyl-n-propylamine, N,N-dimethylisopropylamine, N,N-dimethyl-n-butylamine, N,N-dimethyl-s-butylamine, N,N-dimethyl-t-butylamine, N,N -dimethylisobutylamine, N,N-diethylmethylamine, N-methyldi(n-propyl)amine, N-methyldiisopropylamine, N-methyldi(n-butyl)amine, N-methyldiisobutylamine, triethylamine, N,N - diethyl-n-butylamine, N,N-diisopropylethylamine, N,N-di(n-butyl)ethylamine, tri(n-propyl)amine, tri(i-propyl)amine, tri(n-butyl)amine, Trialkylamine compounds such as tri(i-butyl)amine, 1-methylacetidine, 1-methylpyrrolidine, and 1-methylpiperidine; triarylamine compounds such as triphenylamine; N-methyldiphenylamine, N-ethyldiphenylamine, Alkyldiarylamine compounds such as 9-methylcarbazole and 9-ethylcarbazole; N,N-diethylaniline, N,N-di(n-propyl)aniline, N,N-di(i-propyl)aniline, N,N -tertiary amine compounds such as dialkylarylamine compounds such as di(n-butyl)aniline; Amine compounds are preferred. More preferred are trialkylamine compounds, and even more preferred is triethylamine.
The amine adduct can be obtained by adding the polythiophene derivative to the amine itself or its solution and stirring well.
ポリチオフェン誘導体またはそのアミン付加体では、それらを構成する繰り返し単位の一部において、その化学構造が「キノイド構造」と呼ばれる酸化型の構造となっている場合がある。用語「キノイド構造」は、用語「ベンゼノイド構造」に対して用いられるもので、芳香環を含む構造である後者に対し、前者は、その芳香環内の二重結合が環外に移動し(その結果、芳香環は消失する)、環内に残る他の二重結合と共役する2つの環外二重結合が形成された構造を意味する。当業者にとって、これらの両構造の関係は、ベンゾキノンとヒドロキノンの構造の関係から容易に理解できるものである。種々の共役ポリマーの繰り返し単位についてのキノイド構造は、当業者にとって周知である。一例として、上記式(H1)で表される繰り返し単位を含むポリチオフェン誘導体の繰り返し単位に対応するキノイド構造を、下記式(H1’)に示す。 In addition, the above polythiophene derivative or its amine adduct may be treated with a reducing agent before use.
In polythiophene derivatives or their amine adducts, some of the repeating units constituting them may have an oxidized chemical structure called a "quinoid structure". The term "quinoid structure" is used for the term "benzenoid structure", the latter being a structure containing an aromatic ring, whereas the former is a structure in which the double bond within the aromatic ring moves out of the ring (the As a result, the aromatic ring disappears), meaning a structure in which two exocyclic double bonds conjugated with other double bonds remaining in the ring are formed. For those skilled in the art, the relationship between these two structures can be readily understood from the relationship between the structures of benzoquinone and hydroquinone. Quinoid structures for repeating units of various conjugated polymers are well known to those skilled in the art. As an example, the quinoid structure corresponding to the repeating unit of the polythiophene derivative containing the repeating unit represented by the above formula (H1) is shown in the following formula (H1').
そこで、上記ポリチオフェン誘導体を、還元剤を用いる還元処理に付すと、ポリチオフェン誘導体にキノイド構造が過剰に導入されていても、還元によりキノイド構造が減少し、ポリチオフェン誘導体の有機溶媒に対する溶解性や分散性が向上するため、均質性に優れた薄膜を与える良好な電荷輸送性ワニスを、安定的に製造することが可能になる。 There is a correlation between the amount of the quinoid structure contained in the polythiophene derivative and the solubility and dispersibility of the polythiophene derivative in organic solvents. be. Therefore, the introduction of the quinoid structure after the thin film is formed from the charge-transporting varnish does not cause any problems, but if the quinoid structure is excessively introduced into the polythiophene derivative due to the above unintended oxidation reaction, the charge May interfere with production of transportable varnishes. Polythiophene derivatives are known to vary in solubility and dispersibility in organic solvents. It is considered that it fluctuates according to the difference in the production conditions of each polythiophene derivative.
Therefore, when the polythiophene derivative is subjected to a reduction treatment using a reducing agent, even if the quinoid structure is excessively introduced into the polythiophene derivative, the quinoid structure is reduced by the reduction, and the solubility and dispersibility of the polythiophene derivative in an organic solvent are improved. is improved, it becomes possible to stably produce a good charge-transporting varnish that gives a thin film with excellent uniformity.
このような還元剤も還元が適切にされる限り特に制限はないが、例えば、市販品で入手が容易であるアンモニア水、ヒドラジン等が適当である。
また、還元剤の量は、用いる還元剤の量に応じて異なるため一概に規定できないが、処理すべきポリチオフェン誘導体やアミン付加体100質量部に対し、通常、還元が適切にされる観点から、0.1質量部以上であり、過剰な還元剤が残存しないようにする観点から、10質量部以下である。 The conditions for the reduction treatment are such that the quinoid structure is reduced to appropriately convert to the non-oxidized structure, that is, the benzenoid structure (for example, in the polythiophene derivative containing the repeating unit represented by the above formula (H1), The quinoid structure represented by the above formula (H1′) is not particularly limited as long as it can be converted to the structure represented by the above formula (H1), for example, in the presence of an appropriate solvent or This treatment can be carried out simply by contacting the polythiophene derivative or amine adduct with a reducing agent in the absence thereof.
Such a reducing agent is not particularly limited as long as the reduction is performed properly, but suitable examples include aqueous ammonia, hydrazine, etc., which are readily available on the market.
In addition, the amount of the reducing agent varies depending on the amount of the reducing agent to be used, and cannot be categorically defined. It is 0.1 parts by mass or more and 10 parts by mass or less from the viewpoint of preventing excess reducing agent from remaining.
また、式(H1)で表される繰り返し単位を含むポリチオフェン誘導体は、市販品を用いても、チオフェン誘導体などを出発原料とした公知の方法によって重合したものを用いてもよいが、いずれの場合も再沈殿やイオン交換等の方法により精製されたものを用いることが好ましい。精製したものを用いることで、本発明の電荷輸送性ワニスから得られる薄膜を備えた有機EL素子の特性をより高めることができる。 The polythiophene derivative or its amine adduct contained in the charge-transporting varnish used in the present invention may be only one type of polythiophene derivative or its amine adduct containing a repeating unit represented by formula (H1), or two types. or more.
In addition, as the polythiophene derivative containing a repeating unit represented by formula (H1), a commercially available product or a product obtained by polymerizing a thiophene derivative or the like as a starting material by a known method may be used. It is also preferable to use those purified by methods such as reprecipitation and ion exchange. By using the purified varnish, the characteristics of the organic EL device provided with the thin film obtained from the charge-transporting varnish of the present invention can be further enhanced.
炭素数1~20のアルキル基としては、直鎖状、分岐鎖状、環状のいずれでもよく、例えば、メチル、エチル、n-プロピル、イソプロピル、n-ブチル、イソブチル、s-ブチル、t-ブチル、n-ペンチル、n-ヘキシル、n-ヘプチル、n-オクチル、n-ノニル、n-デシル基等の炭素数1~20の直鎖または分岐鎖状アルキル基;シクロプロピル、シクロブチル、シクロペンチル、シクロヘキシル、シクロヘプチル、シクロオクチル、シクロノニル、シクロデシル、ビシクロブチル、ビシクロペンチル、ビシクロヘキシル、ビシクロヘプチル、ビシクロオクチル、ビシクロノニル、ビシクロデシル基等の炭素数3~20の環状アルキル基などが挙げられる。 In each formula above, the halogen atom includes a fluorine atom, a chlorine atom, a bromine atom, an iodine atom and the like.
The alkyl group having 1 to 20 carbon atoms may be linear, branched or cyclic, and examples thereof include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, s-butyl and t-butyl. , n-pentyl, n-hexyl, n-heptyl, n-octyl, n-nonyl, n-decyl, linear or branched alkyl groups having 1 to 20 carbon atoms; cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl , cycloheptyl, cyclooctyl, cyclononyl, cyclodecyl, bicyclobutyl, bicyclopentyl, bicyclohexyl, bicycloheptyl, bicyclooctyl, bicyclononyl, and bicyclodecyl groups.
その具体例としては、フルオロメチル、ジフルオロメチル、トリフルオロメチル、ペンタフルオロエチル、2,2,2-トリフルオロエチル、ヘプタフルオロプロピル、2,2,3,3,3-ペンタフルオロプロピル、2,2,3,3-テトラフルオロプロピル、2,2,2-トリフルオロ-1-(トリフルオロメチル)エチル、ノナフルオロブチル、4,4,4-トリフルオロブチル、ウンデカフルオロペンチル、2,2,3,3,4,4,5,5,5-ノナフルオロペンチル、2,2,3,3,4,4,5,5-オクタフルオロペンチル、トリデカフルオロヘキシル、2,2,3,3,4,4,5,5,6,6,6-ウンデカフロオロヘキシル、2,2,3,3,4,4,5,5,6,6-デカフルオロヘキシル、3,3,4,4,5,5,6,6,6-ノナフルオロヘキシル基等が挙げられる。 Examples of the haloalkyl group having 1 to 20 carbon atoms include those obtained by substituting at least one hydrogen atom of the alkyl group having 1 to 20 carbon atoms with a halogen atom. Alkyl groups are more preferred.
Specific examples thereof include fluoromethyl, difluoromethyl, trifluoromethyl, pentafluoroethyl, 2,2,2-trifluoroethyl, heptafluoropropyl, 2,2,3,3,3-pentafluoropropyl, 2, 2,3,3-tetrafluoropropyl, 2,2,2-trifluoro-1-(trifluoromethyl)ethyl, nonafluorobutyl, 4,4,4-trifluorobutyl, undecafluoropentyl, 2,2 , 3,3,4,4,5,5,5-nonafluoropentyl, 2,2,3,3,4,4,5,5-octafluoropentyl, tridecafluorohexyl, 2,2,3, 3,4,4,5,5,6,6,6-undecafluorohexyl, 2,2,3,3,4,4,5,5,6,6-decafluorohexyl, 3,3, 4,4,5,5,6,6,6-nonafluorohexyl group and the like.
特に、R1~R6は、水素原子、フッ素原子、メチル基、フェニル基またはジフェニルアミノ基(Y2およびY3がフェニル基である-NY2Y3)がより好ましく、R1~R4が水素原子であり、かつ、R5およびR6が同時に水素原子またはジフェニルアミノ基がより一層好ましい。 In formula (H2), R 1 to R 6 are a hydrogen atom, a halogen atom, an alkyl group having 1 to 20 carbon atoms optionally substituted by Z 1 , and an alkyl group having 6 to 20 carbon atoms optionally substituted by Z 2 . 20 aryl groups, -NHY 1 , -NY 2 Y 3 , -OY 4 or -SY 5 are preferred, and in this case Y 1 to Y 5 have 1 to 5 carbon atoms optionally substituted by Z 1 An alkyl group having 10 carbon atoms or an aryl group having 6 to 10 carbon atoms which may be substituted with Z 2 is preferred, and an alkyl group having 1 to 6 carbon atoms which may be substituted with Z 1 or an aryl group having 1 to 6 carbon atoms which may be substituted with Z 2 A phenyl group having a low molecular weight is more preferred, and an alkyl group having 1 to 6 carbon atoms or a phenyl group is even more preferred.
In particular, R 1 to R 6 are more preferably a hydrogen atom, a fluorine atom, a methyl group, a phenyl group or a diphenylamino group (-NY 2 Y 3 in which Y 2 and Y 3 are phenyl groups), and R 1 to R 4 is a hydrogen atom, and R 5 and R 6 are more preferably both a hydrogen atom or a diphenylamino group.
また、Z3は、ハロゲン原子が好ましく、フッ素原子がより好ましく、存在しないこと(すなわち、非置換の基であること)がより一層好ましい。
kおよびlとしては、式(H2)で表されるアニリン誘導体の溶解性を高める観点から、好ましくは、k+l≦8であり、より好ましくは、k+l≦5である。 In particular, in R 1 to R 6 and Y 1 to Y 5 , Z 1 is preferably a halogen atom or an aryl group having 6 to 10 carbon atoms optionally substituted by Z 3 , more preferably a fluorine atom or a phenyl group. preferably not present (that is, an unsubstituted group), and Z 2 is preferably a halogen atom or an alkyl group having 1 to 10 carbon atoms optionally substituted by Z 3 , A fluorine atom or an alkyl group having 1 to 6 carbon atoms is more preferable, and its absence (that is, an unsubstituted group) is even more preferable.
Z 3 is preferably a halogen atom, more preferably a fluorine atom, and more preferably absent (that is, an unsubstituted group).
From the viewpoint of increasing the solubility of the aniline derivative represented by formula (H2), k and l are preferably k+l≦8, more preferably k+l≦5.
また、式(H3)で表されるアニリン誘導体の溶媒に対する溶解性を高めるとともに、得られる薄膜の均一性を高めることを考慮すると、R11およびR13が共に水素原子であることが好ましい。
特に、R11およびR13が共に水素原子であり、R12およびR14が、それぞれ独立して、フェニル基(このフェニル基は、ハロゲン原子、ニトロ基、シアノ基、水酸基、チオール基、リン酸基、スルホ基、カルボキシ基、炭素数1~20のアルコキシ基、炭素数1~20のチオアルコキシ基、炭素数1~20のアルキル基、炭素数1~20のハロアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基、炭素数7~20のアラルキル基、または炭素数1~20のアシル基で置換されていてもよい。)、または上記式(H3a)で表される基であることが好ましく、R11およびR13が、共に水素原子であり、R12およびR14が、それぞれ独立して、フェニル基、またはR19’およびR20’が共にフェニル基である下記式(H3a′)で表される基であることがより好ましく、R11およびR13が、共に水素原子であり、R12およびR14が、共にフェニル基であることがより一層好ましい。
また、mとしては、化合物の入手容易性、製造の容易性、コスト面などを考慮すると、2~4が好ましく、溶媒への溶解性を高めることを考慮すると、2または3がより好ましく、化合物の入手容易性、製造の容易性、製造コスト、溶媒への溶解性、得られる薄膜の透明性等のバランスを考慮すると、2が最適である。 In formula (H3), R 7 to R 10 are preferably a hydrogen atom, a halogen atom, an alkyl group having 1 to 4 carbon atoms, a perfluoroalkyl group having 1 to 4 carbon atoms, or an alkoxy group having 1 to 4 carbon atoms, A hydrogen atom is more preferred.
Moreover, both R 11 and R 13 are preferably hydrogen atoms in consideration of increasing the solubility of the aniline derivative represented by formula (H3) in solvents and improving the uniformity of the resulting thin film.
In particular, both R 11 and R 13 are hydrogen atoms, and R 12 and R 14 are each independently a phenyl group (the phenyl group is a halogen atom, a nitro group, a cyano group, a hydroxyl group, a thiol group, a phosphoric acid group, sulfo group, carboxy group, alkoxy group having 1 to 20 carbon atoms, thioalkoxy group having 1 to 20 carbon atoms, alkyl group having 1 to 20 carbon atoms, haloalkyl group having 1 to 20 carbon atoms, and 2 to 20 carbon atoms. an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, an aralkyl group having 7 to 20 carbon atoms, or an acyl group having 1 to 20 carbon atoms.), or a group represented by the above formula (H3a), wherein R 11 and R 13 are both hydrogen atoms, R 12 and R 14 are each independently a phenyl group, or R 19' and more preferably a group represented by the following formula (H3a') in which both R 20' are phenyl groups, both R 11 and R 13 are hydrogen atoms, and both R 12 and R 14 are phenyl groups; is even more preferable.
In addition, m is preferably 2 to 4 in consideration of the availability of the compound, ease of production, cost, etc., and more preferably 2 or 3 in consideration of increasing the solubility in the solvent. Considering the balance among availability, ease of production, production cost, solubility in solvents, transparency of the resulting thin film, etc., 2 is the most suitable.
なお、本発明の電荷輸送性ワニスには、フッ素化アリールスルホン酸ポリマー化合物以外に、公知の有機系ドーパント物質や無機系ドーパント物質を含んでいてもよいが、これらその他のドーパント物質は含まないことが好ましい。 In the charge-transporting varnish of the present invention, the amount of the fluorinated arylsulfonic acid polymer compound used as the dopant substance is, in terms of the substance amount (mole) ratio, with respect to 1 charge-transporting substance such as a polythiophene derivative or an arylamine derivative: It is preferably about 0.01 to 20.0, more preferably about 0.05 to 15.
The charge-transporting varnish of the present invention may contain known organic dopant substances and inorganic dopant substances in addition to the fluorinated arylsulfonic acid polymer compound, but should not contain other dopant substances. is preferred.
クロロホルム、クロロベンゼン等の塩素系溶媒;
トルエン、キシレン、テトラリン、シクロヘキシルベンゼン、デシルベンゼン等の芳香族炭化水素系溶媒;
1-オクタノール、1-ノナノール、1-デカノール等の脂肪族アルコール系溶媒;
テトラヒドロフラン、ジオキサン、アニソール、4-メトキシトルエン、3-フェノキシトルエン、ジベンジルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールブチルメチルエーテル、トリエチレングリコールジメチルエーテル、トリエチレングリコールブチルメチルエーテル等のエーテル系溶媒;
安息香酸メチル、安息香酸エチル、安息香酸ブチル、安息香酸イソアミル、フタル酸ビス(2-エチルヘキシル)、マレイン酸ジブチル、シュウ酸ジブチル、酢酸ヘキシル、ジエチレングリコールモノエチルエーテルアセテート、ジエチレングリコールモノブチルエーテルアセテート等のエステル系溶媒
等が挙げられる。 Examples of low-polarity solvents include
Chlorinated solvents such as chloroform and chlorobenzene;
aromatic hydrocarbon solvents such as toluene, xylene, tetralin, cyclohexylbenzene, decylbenzene;
Aliphatic alcohol solvents such as 1-octanol, 1-nonanol, 1-decanol;
Ether solvents such as tetrahydrofuran, dioxane, anisole, 4-methoxytoluene, 3-phenoxytoluene, dibenzyl ether, diethylene glycol dimethyl ether, diethylene glycol butyl methyl ether, triethylene glycol dimethyl ether, triethylene glycol butyl methyl ether;
Esters such as methyl benzoate, ethyl benzoate, butyl benzoate, isoamyl benzoate, bis(2-ethylhexyl) phthalate, dibutyl maleate, dibutyl oxalate, hexyl acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, etc. A solvent etc. are mentioned.
N,N-ジメチルホルムアミド、N,N-ジメチルアセトアミド、N,N-ジメチルイソブチルアミド、N-メチルピロリドン、1,3-ジメチル-2-イミダゾリジノン等のアミド系溶媒;
エチルメチルケトン、イソホロン、シクロヘキサノン等のケトン系溶媒;
アセトニトリル、3-メトキシプロピオニトリル等のシアノ系溶媒;
エチレングリコール、ジエチレングリコール、トリエチレングリコール、ジプロピレングリコール、1,3-ブタンジオール、2,3-ブタンジオール等の多価アルコール系溶媒;
ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノフェニルエーテル、トリエチレングリコールモノメチルエーテル、ジプロピレングリコールモノメチルエーテル、ベンジルアルコール、2-フェノキシエタノール、2-ベンジルオキシエタノール、3-フェノキシベンジルアルコール、テトラヒドロフルフリルアルコール等の脂肪族アルコール以外の1価アルコール系溶媒;
ジメチルスルホキシド等のスルホキシド系溶媒
等が挙げられる。 In addition, as a highly polar solvent, for example,
Amide solvents such as N,N-dimethylformamide, N,N-dimethylacetamide, N,N-dimethylisobutyramide, N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone;
Ketone solvents such as ethyl methyl ketone, isophorone, cyclohexanone;
Cyano solvents such as acetonitrile and 3-methoxypropionitrile;
Polyhydric alcohol solvents such as ethylene glycol, diethylene glycol, triethylene glycol, dipropylene glycol, 1,3-butanediol, 2,3-butanediol;
Other than aliphatic alcohols such as diethylene glycol monomethyl ether, diethylene glycol monophenyl ether, triethylene glycol monomethyl ether, dipropylene glycol monomethyl ether, benzyl alcohol, 2-phenoxyethanol, 2-benzyloxyethanol, 3-phenoxybenzyl alcohol and tetrahydrofurfuryl alcohol A monohydric alcohol solvent of;
Sulfoxide solvents such as dimethylsulfoxide and the like are included.
金属酸化物ナノ粒子の一次粒子径は、ナノサイズであれば特に限定されるものではないが、2~150nmが好ましく、3~100nmがより好ましく、5~50nmがより一層好ましい。なお、粒子径は、BET法による窒素吸着等温線を用いた測定値である。 Furthermore, the charge-transporting varnish of the present invention may contain one or more metal oxide nanoparticles. A nanoparticle means a fine particle having an average primary particle size of the order of nanometers (typically 500 nm or less). Metal oxide nanoparticles refer to metal oxides shaped into nanoparticles.
The primary particle size of the metal oxide nanoparticles is not particularly limited as long as it is nano-sized, but is preferably 2 to 150 nm, more preferably 3 to 100 nm, and even more preferably 5 to 50 nm. The particle size is a measured value using a nitrogen adsorption isotherm by the BET method.
通常の意味での金属としては、特に限定されるものではないが、スズ(Sn)、チタン(Ti)、アルミニウム(Al)、ジルコニウム(Zr)、亜鉛(Zn)、ニオブ(Nb)、タンタル(Ta)およびW(タングステン)からなる群より選択される1種または2種以上を用いることが好ましい。
一方、半金属とは、化学的および/または物理的性質が金属と非金属の中間である元素を意味する。半金属の普遍的な定義は確立されていないが、本発明では、ホウ素(B)、ケイ素(Si)、ゲルマニウム(Ge)、ヒ素(As)、アンチモン(Sb)およびテルル(Te)の計6元素を半金属とする。これらの半金属は、単独で用いても、2種以上を組み合わせて用いてもよく、また通常の意味での金属と組み合わせて用いてもよい。 The metals constituting the metal oxide nanoparticles include not only metals in the usual sense, but also semimetals.
Metals in the usual sense include, but are not limited to, tin (Sn), titanium (Ti), aluminum (Al), zirconium (Zr), zinc (Zn), niobium (Nb), tantalum ( It is preferable to use one or more selected from the group consisting of Ta) and W (tungsten).
On the other hand, metalloids refer to elements whose chemical and/or physical properties are intermediate between those of metals and nonmetals. A universal definition of metalloids has not been established, but in the present invention, a total of six Let the elements be semimetals. These semimetals may be used alone or in combination of two or more, and may also be used in combination with metals in the usual sense.
シリカゾルとしては、特に限定されるものではなく、公知のシリカゾルから適宜選択して用いることができる。
市販のシリカゾルは通常、分散液の形態にある。市販のシリカゾルとしては、SiO2ナノ粒子が種々の溶媒、例えば、水、メタノール、メチルエチルケトン、メチルイソブチルケトン、N,N-ジメチルアセトアミド、エチレングリコール、イソプロパノール、メタノール、エチレングリコールモノプロピルエーテル、シクロヘキサノン、酢酸エチル、トルエン、プロピレングリコールモノメチルエーテルアセタート等に分散したものが挙げられる。 In particular, in the present invention, it is preferable to use silica sol in which SiO 2 nanoparticles are dispersed in a dispersion medium as the metal oxide nanoparticles.
The silica sol is not particularly limited, and can be appropriately selected from known silica sols and used.
Commercially available silica sols are usually in the form of dispersions. As commercially available silica sols, SiO2 nanoparticles are mixed with various solvents such as water, methanol, methyl ethyl ketone, methyl isobutyl ketone, N,N-dimethylacetamide, ethylene glycol, isopropanol, methanol, ethylene glycol monopropyl ether, cyclohexanone, acetic acid. Examples include those dispersed in ethyl, toluene, propylene glycol monomethyl ether acetate, and the like.
また、シリカゾルの固形分濃度も特に限定されるものではないが、5~60質量%が好ましく、10~50質量%がより好ましく、15~30質量%がより一層好ましい。 Specific examples of commercially available silica sols include Snowtex (registered trademark) ST-O, ST-OS, ST-O-40 and ST-OL manufactured by Nissan Chemical Industries, Ltd., and Silidol 20 manufactured by Nippon Chemical Industries Co., Ltd. , 30, 40, etc.; methanol silica sol manufactured by Nissan Chemical Co., Ltd., MA-ST-M, MA-ST-L, IPA-ST, IPA-ST-L, IPA-ST-ZL, EG- Examples include, but are not limited to, organosilica sols such as ST.
The solid content concentration of the silica sol is also not particularly limited, but is preferably 5 to 60% by mass, more preferably 10 to 50% by mass, and even more preferably 15 to 30% by mass.
有機シラン化合物としては、ジアルコキシシラン化合物、トリアルコキシシラン化合物またはテトラアルコキシシラン化合物が挙げられる。 When the resulting thin film is used as a hole injection layer of an organic EL device, the charge-transporting varnish of the present invention is used for the purpose of improving the injection properties into the hole-transporting layer and improving the life characteristics of the device. It may contain a silane compound. Its content is usually about 1 to 30% by mass with respect to the total mass of the charge-transporting substance and the dopant substance.
Examples of organic silane compounds include dialkoxysilane compounds, trialkoxysilane compounds, and tetraalkoxysilane compounds.
また、電荷輸送性ワニスの固形分濃度は、ワニスの粘度および表面張力等や、作製する薄膜の厚み等を勘案して適宜決定されるものではあるが、通常、0.1~10.0質量%程度であり、ワニスの塗布性を向上させることを考慮すると、好ましくは0.5~5.0質量%程度、より好ましくは1.0~3.0質量%程度である。 The viscosity of the charge-transporting varnish is determined appropriately according to the thickness of the thin film to be produced and the solid content concentration, but is usually 1 to 50 mPa·s at 25°C. In the present invention, the solid content means components other than the solvent contained in the charge-transporting varnish.
The solid content concentration of the charge-transporting varnish is appropriately determined in consideration of the viscosity and surface tension of the varnish, the thickness of the thin film to be produced, etc., but is usually 0.1 to 10.0 mass. %, preferably about 0.5 to 5.0% by mass, more preferably about 1.0 to 3.0% by mass, in consideration of improving the coatability of the varnish.
この場合、電荷輸送性薄膜は、上述した電荷輸送性ワニスを基材上に塗布して焼成して形成することができる。
ワニスの塗布方法としては、特に限定されるものではなく、ディップ法、スピンコート法、転写印刷法、ロールコート法、刷毛塗り、インクジェット法、スプレー法、スリットコート法等が挙げられ、塗布方法に応じてワニスの粘度および表面張力を調節することが好ましい。 Since the charge-transporting varnish described above can be used to easily produce a charge-transporting thin film, it can be suitably used in the production of electronic devices, particularly organic EL devices.
In this case, the charge-transporting thin film can be formed by coating the above-described charge-transporting varnish on the base material and baking it.
The method of applying the varnish is not particularly limited, and includes dipping, spin coating, transfer printing, roll coating, brush coating, inkjet, spraying, slit coating, and the like. It is preferable to adjust the viscosity and surface tension of the varnish accordingly.
なお、焼成の際、より高い均一成膜性を発現させたり、基材上で反応を進行させたりする目的で、2段階以上の温度変化をつけてもよく、加熱は、例えば、ホットプレートやオーブン等、適当な機器を用いて行えばよい。 The firing temperature is appropriately determined within a range of about 100 to 260° C. in consideration of the use of the obtained thin film, the degree of charge transport property to be imparted to the obtained thin film, the type and boiling point of the solvent, etc. For example, the obtained thin film is is used as a hole injection layer of an organic EL device, the temperature is preferably about 140 to 250°C, more preferably about 145 to 240°C. A thin film with good charge transport properties can also be obtained by calcination.
It should be noted that, during the firing, the temperature may be changed in two or more stages for the purpose of expressing a higher uniform film-forming property or promoting the reaction on the substrate. Suitable equipment such as an oven may be used.
上記電荷輸送性薄膜を有機EL素子に適用する場合、有機EL素子を構成する一対の電極の間に、上述の電荷輸送性薄膜を備える構成とすることができる。
有機EL素子の代表的な構成としては、以下(a)~(f)が挙げられるが、これらに限定されるわけではない。なお、下記構成において、必要に応じて、発光層と陽極の間に電子ブロック層等を、発光層と陰極の間にホール(正孔)ブロック層等を設けることもできる。また、正孔注入層、正孔輸送層あるいは正孔注入輸送層が電子ブロック層等としての機能を兼ね備えていてもよく、電子注入層、電子輸送層あるいは電子注入輸送層がホール(正孔)ブロック層等としての機能を兼ね備えていてもよい。さらに、必要に応じて各層の間に任意の機能層を設けることも可能である。
(a)陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/電子注入層/陰極
(b)陽極/正孔注入層/正孔輸送層/発光層/電子注入輸送層/陰極
(c)陽極/正孔注入輸送層/発光層/電子輸送層/電子注入層/陰極
(d)陽極/正孔注入輸送層/発光層/電子注入輸送層/陰極
(e)陽極/正孔注入層/正孔輸送層/発光層/陰極
(f)陽極/正孔注入輸送層/発光層/陰極 [3] Organic EL element When the charge-transporting thin film is applied to an organic EL element, the charge-transporting thin film may be provided between a pair of electrodes constituting the organic EL element.
Typical structures of the organic EL element include (a) to (f) below, but are not limited to these. In the following structure, an electron blocking layer or the like may be provided between the light emitting layer and the anode, and a hole blocking layer or the like may be provided between the light emitting layer and the cathode, if necessary. Further, the hole injection layer, the hole transport layer or the hole injection transport layer may also function as an electron blocking layer or the like, and the electron injection layer, the electron transport layer or the electron injection transport layer may contain holes (holes). It may also have a function as a block layer or the like. Furthermore, it is also possible to provide arbitrary functional layers between each layer as needed.
(a) anode/hole-injection layer/hole-transport layer/light-emitting layer/electron-transport layer/electron-injection layer/cathode (b) anode/hole-injection layer/hole-transport layer/light-emitting layer/electron-injection-transport layer/ Cathode (c) anode/hole injection transport layer/light emitting layer/electron transport layer/electron injection layer/cathode (d) anode/hole injection transport layer/light emitting layer/electron injection transport layer/cathode (e) anode/positive Hole-injection layer/hole-transport layer/light-emitting layer/cathode (f) Anode/hole-injection-transport layer/light-emitting layer/cathode
「電子注入層」、「電子輸送層」および「電子注入輸送層」とは、発光層と陰極との間に形成される層であって、電子を陰極から発光層へ輸送する機能を有するものであり、発光層と陰極の間に、電子輸送性材料の層が1層のみ設けられる場合、それが「電子注入輸送層」であり、発光層と陰極の間に、電子輸送性材料の層が2層以上設けられる場合、陰極に近い層が「電子注入層」であり、それ以外の層が「電子輸送層」である。
「発光層」とは、発光機能を有する有機層であって、ドーピングシステムを採用する場合、ホスト材料とドーパント材料を含んでいる。このとき、ホスト材料は、主に電子と正孔の再結合を促し、励起子を発光層内に閉じ込める機能を有し、ドーパント材料は、再結合で得られた励起子を効率的に発光させる機能を有する。燐光素子の場合、ホスト材料は主にドーパントで生成された励起子を発光層内に閉じ込める機能を有する。 "Hole injection layer", "hole transport layer" and "hole injection transport layer" are layers formed between a light-emitting layer and an anode that transport holes from the anode to the light-emitting layer. When only one layer of a hole-transporting material is provided between the light-emitting layer and the anode, it is a "hole-injection-transport layer", and between the light-emitting layer and the anode, When two or more layers of hole-transporting material are provided, the layer close to the anode is the "hole-injecting layer" and the other layer is the "hole-transporting layer". In particular, the hole-injecting (transporting) layer is a thin film that is excellent not only in the ability to accept holes from the anode but also in the ability to inject holes into the hole-transporting (light-emitting) layer.
"Electron injection layer", "electron transport layer" and "electron injection transport layer" are layers formed between a light-emitting layer and a cathode, and have the function of transporting electrons from the cathode to the light-emitting layer. and when only one layer of the electron-transporting material is provided between the light-emitting layer and the cathode, it is the "electron-injection-transporting layer", and a layer of the electron-transporting material is provided between the light-emitting layer and the cathode When two or more layers are provided, the layer close to the cathode is the "electron injection layer" and the other layer is the "electron transport layer".
A "light-emitting layer" is an organic layer having a light-emitting function, and includes a host material and a dopant material when a doping system is employed. At this time, the host material mainly promotes recombination of electrons and holes and has the function of confining excitons in the light-emitting layer, and the dopant material efficiently emits the excitons obtained by recombination. have a function. In the case of a phosphorescent device, the host material mainly functions to confine excitons generated by the dopant within the light-emitting layer.
本発明の電荷輸送性ワニスから得られる薄膜からなる正孔注入層を有するOLED素子の作製方法の一例は、以下のとおりである。なお、電極は、電極に悪影響を与えない範囲で、アルコール、純水等による洗浄や、UVオゾン処理、酸素-プラズマ処理等による表面処理を予め行うことが好ましい。
陽極基板上に、上記の方法により、本発明の電荷輸送性薄膜からなる正孔注入層を形成する。これを真空蒸着装置内に導入し、正孔輸送層、発光層、電子輸送層、電子輸送層/ホールブロック層、電子注入層、陰極金属を順次蒸着する。あるいは、当該方法において蒸着で正孔輸送層と発光層を形成する代わりに、正孔輸送性高分子を含む正孔輸送層形成用組成物と発光性高分子を含む発光層形成用組成物を用いてウェットプロセスによってこれらの層を形成する。なお、必要に応じて、発光層と正孔輸送層との間に電子ブロック層を設けてよい。 Examples of the materials to be used and the manufacturing method for manufacturing an EL device using the charge-transporting varnish of the present invention include, but are not limited to, the following.
An example of a method for producing an OLED device having a hole injection layer made of a thin film obtained from the charge-transporting varnish of the present invention is as follows. The electrodes are preferably cleaned with alcohol, pure water, or the like, or surface-treated with UV ozone treatment, oxygen-plasma treatment, or the like in advance, as long as the electrodes are not adversely affected.
A hole injection layer comprising the charge-transporting thin film of the present invention is formed on the anode substrate by the method described above. This is introduced into a vacuum vapor deposition apparatus, and a hole transport layer, a light emitting layer, an electron transport layer, an electron transport layer/hole blocking layer, an electron injection layer, and a cathode metal are sequentially vapor-deposited. Alternatively, instead of forming the hole-transporting layer and the light-emitting layer by vapor deposition in the method, a composition for forming a hole-transporting layer containing a hole-transporting polymer and a composition for forming a light-emitting layer containing a light-emitting polymer are used. are used to form these layers by a wet process. An electron blocking layer may be provided between the light-emitting layer and the hole-transporting layer, if necessary.
なお、金属陽極を構成するその他の金属としては、金、銀、銅、インジウムやこれらの合金等が挙げられるが、これらに限定されるわけではない。 Anode materials include transparent electrodes typified by indium tin oxide (ITO) and indium zinc oxide (IZO), and metal anodes composed of metals typified by aluminum and alloys thereof. It is preferable to have undergone a heat treatment. Polythiophene derivatives and polyaniline derivatives having high charge transport properties can also be used.
Other metals constituting the metal anode include gold, silver, copper, indium, and alloys thereof, but are not limited to these.
また、蒸着で発光層を形成する場合、発光性ドーパントと共蒸着してもよく、発光性ドーパントとしては、トリス(2-フェニルピリジン)イリジウム(III)(Ir(ppy)3)等の金属錯体や、ルブレン等のナフタセン誘導体、キナクリドン誘導体、ペリレン等の縮合多環芳香族環等が挙げられるが、これらに限定されない。 Materials for forming the light-emitting layer include metal complexes such as aluminum complexes of 8-hydroxyquinoline, metal complexes of 10-hydroxybenzo[h]quinoline, bisstyrylbenzene derivatives, bisstyrylarylene derivatives, (2-hydroxyphenyl)benzo Low-molecular light-emitting materials such as thiazole metal complexes and silol derivatives; poly(p-phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly(3-alkyl thiophene), polyvinyl carbazole, etc., mixed with a light-emitting material and an electron transfer material, but not limited to these.
Further, when the light-emitting layer is formed by vapor deposition, it may be co-deposited with a light - emitting dopant. , naphthacene derivatives such as rubrene, quinacridone derivatives, condensed polycyclic aromatic rings such as perylene, and the like, but are not limited thereto.
陰極材料としては、アルミニウム、マグネシウム-銀合金、アルミニウム-リチウム合金等が挙げられるが、これらに限定されない。
電子ブロック層を形成する材料としては、トリス(フェニルピラゾール)イリジウム等が挙げられるが、これに限定されない。 Materials for forming the electron injection layer include metal oxides such as lithium oxide (Li 2 O), magnesium oxide (MgO), alumina (Al 2 O 3 ), lithium fluoride (LiF), and sodium fluoride (NaF). metal fluorides of, but are not limited to:
Cathode materials include, but are not limited to, aluminum, magnesium-silver alloys, aluminum-lithium alloys, and the like.
Materials for forming the electron blocking layer include, but are not limited to, tris(phenylpyrazole) iridium.
(1)1H-NMR
Bruker社製 核磁気共鳴分光計AVANCE III HD500MHz
(2)重量平均分子量(Mw)および数平均分子量(Mn)測定
(条件A)(株)島津製作所製GPC装置Prominence(カラム:TSKgel α2500+α3000+α4000、カラム温度:40℃、検出器:UV検出器(254nm)およびRI検出器、溶離液:MeOH、LiBr(10mM)、カラム流速:1mL/min)、標準試料:ポリエチレンオキシド
(条件B)東ソー(株)製GPC装置HLC-8320GPC(カラム:Shodex KD-805、カラム温度:50℃、検出器:UV検出器(254nm)およびRI検出器、溶離液:DMF、LiBr(30mM)、リン酸(30mM)THF(1%)、カラム流速:1mL/min)、標準試料:ポリエチレンオキシド
(3)基板の洗浄
長州産業(株)製、基板洗浄装置(減圧プラズマ方式)
(4)電荷輸送性ワニスの塗布
ミカサ(株)製 スピンコーターMS-A100
(5)有機EL素子の作製
長州産業(株)製 多機能蒸着装置システムC-E2L1G1-N
(6)有機EL素子の輝度等の測定
(株)EHC製 多チャンネルIVL測定装置
(7)電荷輸送性薄膜の接触角の測定
協和界面科学(株)接触角計DropMaster DM-700 Hereinafter, the present invention will be described in more detail with reference to Synthesis Examples, Preparation Examples, Examples and Comparative Examples, but the present invention is not limited to the following Examples. In addition, the used apparatus is as follows.
( 1 ) 1H-NMR
Bruker nuclear magnetic resonance spectrometer AVANCE III HD500MHz
(2) Measurement of weight average molecular weight (Mw) and number average molecular weight (Mn) (Condition A) Shimadzu Corporation GPC apparatus Prominence (column: TSKgel α2500 + α3000 + α4000, column temperature: 40 ° C., detector: UV detector (254 nm) ) and RI detector, eluent: MeOH, LiBr (10 mM), column flow rate: 1 mL / min), standard sample: polyethylene oxide (condition B) Tosoh Corporation GPC device HLC-8320GPC (column: Shodex KD-805 , column temperature: 50 ° C., detector: UV detector (254 nm) and RI detector, eluent: DMF, LiBr (30 mM), phosphoric acid (30 mM) THF (1%), column flow rate: 1 mL / min), Standard sample: Cleaning of polyethylene oxide (3) substrate Choshu Sangyo Co., Ltd., substrate cleaning device (low pressure plasma method)
(4) Application of charge-transporting varnish Spin coater MS-A100 manufactured by Mikasa Co., Ltd.
(5) Preparation of organic EL element Multifunctional vapor deposition equipment system C-E2L1G1-N manufactured by Choshu Sangyo Co., Ltd.
(6) Measurement of luminance etc. of organic EL element Multi-channel IVL measuring device manufactured by EHC Co., Ltd. (7) Measurement of contact angle of charge-transporting thin film Kyowa Interface Science Co., Ltd. Contact angle meter DropMaster DM-700
[合成例1]化合物1の合成
反応液を室温まで冷却した後、ジメチルスルホキシド200gを加え、室温で3時間撹拌して析出した生成物を溶解させた。得られた溶液をろ過した後、ろ液を減圧して溶媒を取り除き、粗生成物を得た。得られた粗生成物を2-プロパノール(純正化学(株)製)と酢酸エチル(純正化学(株)製、以下同様)の混合溶媒(1/1(w/w))900gに加え、室温で1時間撹拌した。析出した固体をろ過で回収し、得られた固体を減圧下で乾燥して化合物1を得た(収量11.3g、収率76%)。
化合物1の1H-NMRスペクトルを以下に示す。 In a three-necked flask, 10.0 g of sodium 1-naphthol-3,6-disulfonate (manufactured by Yamada Chemical Industry Co., Ltd.) and 2,3,4,5,6-pentafluorostyrene (manufactured by Tokyo Chemical Industry Co., Ltd.) , the same applies hereinafter) and 5.02 g of sodium carbonate (manufactured by Kanto Kagaku Co., Ltd.) are added, and 100 g of dimethyl sulfoxide (manufactured by Junsei Chemical Co., Ltd.; the same applies hereinafter) are added thereto. and stirred for 30 hours.
After the reaction solution was cooled to room temperature, 200 g of dimethylsulfoxide was added and stirred at room temperature for 3 hours to dissolve the precipitated product. After filtering the resulting solution, the filtrate was decompressed to remove the solvent to obtain a crude product. The resulting crude product was added to 900 g of a mixed solvent (1/1 (w/w)) of 2-propanol (manufactured by Junsei Chemical Co., Ltd.) and ethyl acetate (manufactured by Junsei Chemical Co., Ltd.; and stirred for 1 hour. The precipitated solid was collected by filtration, and the resulting solid was dried under reduced pressure to obtain compound 1 (yield: 11.3 g, yield: 76%).
The 1 H-NMR spectrum of compound 1 is shown below.
Mw=2340,Mn=2270,Mw/Mn=1.03(GPC,条件A) In a two-necked flask, 2.0 g of the compound 1 obtained in Synthesis Example 1 and 0.043 g of ammonium persulfate (manufactured by Tokyo Kasei Kogyo Co., Ltd.) were added, and 10 g of degassed ion-exchanged water was added thereto. The mixture was stirred at 65° C. for 20 hours in an atmosphere. After the reaction solution was cooled to room temperature, it was added dropwise to 150 g of methanol (manufactured by Junsei Chemical Co., Ltd., the same shall apply hereinafter) and stirred at room temperature for 1 hour. The precipitated solid was recovered by filtration, and the recovered solid was dried under reduced pressure. After adding and dissolving 5.5 g of ion-exchanged water to the obtained dried product, 20 mL of a cation exchange resin (Dowex Monosphere 650C, manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., the same shall apply hereinafter) was added and left at room temperature for 20 minutes. After stirring, it was filtered. The filtrate was decompressed to remove the solvent to give polymer A (0.95 g).
Mw=2340, Mn=2270, Mw/Mn=1.03 (GPC, condition A)
Mw=5150,Mn=3550,Mw/Mn=1.23(GPC,条件B) In a two-necked flask, 2.0 g of Compound 1 obtained in Synthesis Example 1, 0.74 g of 2,3,4,5,6-pentafluorostyrene, AIBN (manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.) and 0.2 g of AIBN were placed. Then, 20 g of degassed dimethylformamide (manufactured by Junsei Chemical Co., Ltd.) was added thereto, and the mixture was stirred at 80° C. for 8 hours in a nitrogen atmosphere. After the reaction solution was cooled to room temperature, it was added to 200 g of a mixed solvent of methanol and ethyl acetate (1/3 (w/w)) and stirred at room temperature for 1 hour. The precipitated solid was recovered by filtration, and the recovered solid was dried under reduced pressure. After adding and dissolving 10 g of ion-exchanged water to the resulting dried product, 20 mL of a cation exchange resin (Dowex Monosphere 650C) was added, and the mixture was stirred at room temperature for 20 minutes and then filtered. The filtrate was decompressed to remove the solvent to give polymer B (1.59 g).
Mw=5150, Mn=3550, Mw/Mn=1.23 (GPC, condition B)
[比較例1-1]化合物2の合成
[調製例1-1]
米国特許第8017241号明細書および国際公開第2016/171935号記載の方法に順次従って合成した、式(H1a)で表される繰り返し単位を含むポリマーであるポリチオフェン誘導体のアミン付加体0.5gに、1,3-ジメチル-2-イミダゾリジノン(関東化学(株)製、以下同様)8.75gとn-ブチルアミン(東京化成工業(株)製)0.75gを加え、ホットスターラーを用いて80℃で3時間撹拌し、ポリチオフェンが溶解した溶液を得た。 [4] Preparation of composition for preparing charge-transporting varnish [Preparation Example 1-1]
To 0.5 g of an amine adduct of a polythiophene derivative, which is a polymer containing a repeating unit represented by formula (H1a), synthesized sequentially according to the methods described in U.S. Pat. No. 8,017,241 and WO 2016/171935, Add 8.75 g of 1,3-dimethyl-2-imidazolidinone (manufactured by Kanto Kagaku Co., Ltd., the same shall apply hereinafter) and 0.75 g of n-butylamine (manufactured by Tokyo Chemical Industry Co., Ltd.) and add 80 g using a hot stirrer. C. for 3 hours to obtain a solution in which polythiophene was dissolved.
水分散のシリカゾルであるST-OS(日産化学(株)製)100gと、ジプロピレングリコールモノメチルエーテル(関東化学(株)製、以下同様)をナスフラスコに入れ、エバポレーターを用いてST-OS中に含まれる水をジプロピレングリコールモノメチルエーテルに溶媒置換し、ジプロピレングリコールモノメチルエーテル分散のシリカゾル(シリカ濃度9.43%)を得た。 [Preparation Example 1-2]
100 g of ST-OS (manufactured by Nissan Chemical Co., Ltd.), which is a water-dispersed silica sol, and dipropylene glycol monomethyl ether (manufactured by Kanto Chemical Co., Ltd., hereinafter the same) are placed in an eggplant flask, and the ST-OS is evaporated using an evaporator. The water contained in the solution was solvent-substituted with dipropylene glycol monomethyl ether to obtain a dipropylene glycol monomethyl ether-dispersed silica sol (silica concentration: 9.43%).
実施例1-1で得られたポリマーAが5.0質量%含まれる、ジエチレングリコール(関東化学(株)製、以下同様)溶液を調製した。上記溶液は、ホットスターラーを用いて、50℃で1時間撹拌することで調製した。 [Preparation Example 1-3]
A diethylene glycol (manufactured by Kanto Kagaku Co., Ltd., hereinafter the same) solution containing 5.0% by mass of the polymer A obtained in Example 1-1 was prepared. The above solution was prepared by stirring at 50° C. for 1 hour using a hot stirrer.
実施例1-2で得られたポリマーBが10質量%含まれる、1,3-ジメチル-2-イミダゾリジノン溶液を調製した。上記溶液は、ホットスターラーを用いて、50℃で1時間撹拌することで調製した。 [Preparation Example 1-4]
A 1,3-dimethyl-2-imidazolidinone solution containing 10% by mass of Polymer B obtained in Example 1-2 was prepared. The above solution was prepared by stirring at 50° C. for 1 hour using a hot stirrer.
市販で入手可能な、テトラフルオロエチレンとフッ化スルホンビニルエーテルの共重合体であるD-66-20BS水溶液(Solvay社製、AQUIVION)を、エバポレーターにより水を留去した後、減圧乾燥機にて80℃、1時間乾燥させ、D-66-20BSの粉末を得た。その後、D-66-20BSが5質量%含まれる、1,3-ジメチル-2-イミダゾリジノン溶液を調製した。上記溶液は、ホットスターラーを用いて、80℃で2時間撹拌することで調製した。 [Preparation Example 1-5]
A commercially available D-66-20BS aqueous solution (manufactured by Solvay, AQUIVION), which is a copolymer of tetrafluoroethylene and fluorinated sulfone vinyl ether, was distilled with an evaporator to remove water, and then dried at 80°C with a vacuum dryer. ℃ for 1 hour to obtain a powder of D-66-20BS. After that, a 1,3-dimethyl-2-imidazolidinone solution containing 5% by mass of D-66-20BS was prepared. The above solution was prepared by stirring at 80° C. for 2 hours using a hot stirrer.
比較例1-1で得られた化合物2が10質量%含まれる、ジエチレングリコール溶液を調製した。上記溶液は、ホットスターラーを用いて、50℃で1時間撹拌することで調製した。 [Preparation Example 1-6]
A diethylene glycol solution containing 10% by mass of Compound 2 obtained in Comparative Example 1-1 was prepared. The above solution was prepared by stirring at 50° C. for 1 hour using a hot stirrer.
[実施例2-1]
サンプル管に、1,3-ジメチル-2-イミダゾリジノン1.723g、ジエチレングリコール3.537g、ジプロピレングリコールモノメチルエーテル2.927gを加え、スターラーを用いて室温で30分間撹拌した。その後、調製例1-3で得られたポリマーAのジエチレングリコール溶液0.42gを加え、スターラーを用いて室温で30分間撹拌した。次いで、調製例1-1で得られた溶液0.28gを加え、室温で30分間欠撹拌した。さらに、調製例1-2で得られたジプロピレングリコールモノメチルエーテル分散のシリカゾル1.113gを加え、室温で30分間撹拌した。得られた混合溶液を、孔径0.2μmのPPシリンジフィルターでろ過し、電荷輸送性ワニスを得た。 [5] Preparation of charge-transporting varnish [Example 2-1]
1.723 g of 1,3-dimethyl-2-imidazolidinone, 3.537 g of diethylene glycol and 2.927 g of dipropylene glycol monomethyl ether were added to the sample tube and stirred at room temperature for 30 minutes using a stirrer. After that, 0.42 g of the diethylene glycol solution of polymer A obtained in Preparation Example 1-3 was added and stirred at room temperature for 30 minutes using a stirrer. Then, 0.28 g of the solution obtained in Preparation Example 1-1 was added and intermittently stirred at room temperature for 30 minutes. Further, 1.113 g of the dipropylene glycol monomethyl ether-dispersed silica sol obtained in Preparation Example 1-2 was added and stirred at room temperature for 30 minutes. The resulting mixed solution was filtered through a PP syringe filter with a pore size of 0.2 μm to obtain a charge-transporting varnish.
サンプル管に、1,3-ジメチル-2-イミダゾリジノン2.524g、ジプロピレングリコール3.451g、ジプロピレングリコールモノメチルエーテル2.443gを加え、スターラーを用いて室温で30分間撹拌した。その後、調製例1-3で得られたポリマーBの1,3-ジメチル-2-イミダゾリジノン溶液0.21gを加え、スターラーを用いて室温で30分間撹拌した。次いで、調製例1-1で得られた溶液0.28gを加え、室温で30分間撹拌した。さらに、調製例1-2で得られたジプロピレングリコールモノメチルエーテル分散のシリカゾル1.113gを加え、室温で30分間撹拌した。得られた混合溶液を、孔径0.2μmのPPシリンジフィルターでろ過し、電荷輸送性ワニスを得た。 [Example 2-2]
2.524 g of 1,3-dimethyl-2-imidazolidinone, 3.451 g of dipropylene glycol and 2.443 g of dipropylene glycol monomethyl ether were added to the sample tube and stirred at room temperature for 30 minutes using a stirrer. After that, 0.21 g of the 1,3-dimethyl-2-imidazolidinone solution of polymer B obtained in Preparation Example 1-3 was added, and stirred at room temperature for 30 minutes using a stirrer. Then, 0.28 g of the solution obtained in Preparation Example 1-1 was added and stirred at room temperature for 30 minutes. Further, 1.113 g of the dipropylene glycol monomethyl ether-dispersed silica sol obtained in Preparation Example 1-2 was added and stirred at room temperature for 30 minutes. The resulting mixed solution was filtered through a PP syringe filter with a pore size of 0.2 μm to obtain a charge-transporting varnish.
サンプル管に、1,3-ジメチル-2-イミダゾリジノン2.308g、ジプロピレングリコール3.444g、ジプロピレングリコールモノメチルエーテル2.435gを加え、スターラーを用いて室温で30分間撹拌した。その後、調製例1-5で得られたD-66-20BSの1,3-ジメチル-2-イミダゾリジノン溶液0.42gを加え、スターラーを用いて室温で30分間撹拌した。次いで、調製例1-1で得られた溶液0.28gを加え、室温で30分間撹拌した。さらに、調製例1-2で得られたジプロピレングリコールモノメチルエーテル分散のシリカゾル1.113gを加え、室温で30分間撹拌した。得られた混合溶液を、孔径0.2μmのPPシリンジフィルターでろ過し、電荷輸送性ワニスを得た。 [Comparative Example 2-1]
2.308 g of 1,3-dimethyl-2-imidazolidinone, 3.444 g of dipropylene glycol and 2.435 g of dipropylene glycol monomethyl ether were added to the sample tube and stirred at room temperature for 30 minutes using a stirrer. After that, 0.42 g of the 1,3-dimethyl-2-imidazolidinone solution of D-66-20BS obtained in Preparation Example 1-5 was added and stirred at room temperature for 30 minutes using a stirrer. Then, 0.28 g of the solution obtained in Preparation Example 1-1 was added and stirred at room temperature for 30 minutes. Further, 1.113 g of the dipropylene glycol monomethyl ether-dispersed silica sol obtained in Preparation Example 1-2 was added and stirred at room temperature for 30 minutes. The resulting mixed solution was filtered through a PP syringe filter with a pore size of 0.2 μm to obtain a charge-transporting varnish.
サンプル管に、1,3-ジメチル-2-イミダゾリジノン1.727g、ジエチレングリコール3.755g、ジプロピレングリコールモノメチルエーテル2.936gを加え、スターラーを用いて室温で30分間撹拌した。その後、調製例1-6で得られた化合物2のジエチレングリコール溶液0.21gを加え、スターラーを用いて室温で30分間撹拌した。次いで、調製例1-1で得られた溶液0.28gを加え、室温で30分間撹拌した。さらに、調製例1-2で得られたジプロピレングリコールモノメチルエーテル分散のシリカゾル1.113gを加え、室温で30分間撹拌した。得られた混合溶液を、孔径0.2μmのPPシリンジフィルターでろ過し、電荷輸送性ワニスを得た。 [Comparative Example 2-2]
1.727 g of 1,3-dimethyl-2-imidazolidinone, 3.755 g of diethylene glycol and 2.936 g of dipropylene glycol monomethyl ether were added to the sample tube and stirred at room temperature for 30 minutes using a stirrer. After that, 0.21 g of the diethylene glycol solution of compound 2 obtained in Preparation Example 1-6 was added, and the mixture was stirred at room temperature for 30 minutes using a stirrer. Then, 0.28 g of the solution obtained in Preparation Example 1-1 was added and stirred at room temperature for 30 minutes. Further, 1.113 g of the dipropylene glycol monomethyl ether-dispersed silica sol obtained in Preparation Example 1-2 was added and stirred at room temperature for 30 minutes. The resulting mixed solution was filtered through a PP syringe filter with a pore size of 0.2 μm to obtain a charge-transporting varnish.
上記実施例2-1、実施例2-2、比較例2-1および比較例2-2で得られた電荷輸送性ワニスを、スピンコーターを用いてITO基板に塗布した後、大気下、120℃で1分間乾燥した。次に、乾燥させたITO基板を大気雰囲気下、230℃で15分間焼成し、ITO基板上に30nmの均一な電荷輸送性薄膜を形成した。ITO基板としては、厚さ50nmのITO膜が基板表面に均一に形成された、50mm×50mm×0.7tのガラス基板を用い、使用前にO2プラズマ洗浄装置(150W、30秒間)によって表面上の不純物を除去した。
得られた各薄膜上に、アニソール(東京化成工業(株)製)を1μL滴下し、その接触角を測定した結果を表1に示す。 [6] Evaluation of Upper Layer Coatability The charge-transporting varnishes obtained in Examples 2-1, 2-2, and Comparative Examples 2-1 and 2-2 were coated on an ITO substrate using a spin coater. After coating, the coating was dried at 120° C. for 1 minute in the atmosphere. Next, the dried ITO substrate was baked at 230° C. for 15 minutes in an air atmosphere to form a uniform charge-transporting thin film of 30 nm on the ITO substrate. As the ITO substrate, a glass substrate of 50 mm × 50 mm × 0.7 t , on which an ITO film with a thickness of 50 nm is uniformly formed, was used. remove impurities from above.
1 μL of anisole (manufactured by Tokyo Kasei Kogyo Co., Ltd.) was dropped on each of the obtained thin films, and the contact angle was measured. Table 1 shows the results.
[実施例3-1]
実施例2-1で得られたワニスを、スピンコーターを用いて不純物を除去した上記と同様のITO基板に塗布した後、大気下、120℃で1分間乾燥した。次に、乾燥させたITO基板を大気雰囲気下、230℃で15分間焼成し、ITO基板上に30nmの均一な薄膜を形成した。
次いで、薄膜を形成したITO基板に対し、蒸着装置(真空度1.0×10-5Pa)を用いて、α-NPD(N,N’-ジ(1-ナフチル)-N,N’-ジフェニルベンジジン)を0.2nm/秒にて30nm成膜した。次に、関東化学(株)製の電子ブロック材料HTEB-01を10nm成膜した。次いで、新日鉄住金化学(株)製の発光層ホスト材料NS60と発光層ドーパント材料Ir(ppy)3を共蒸着した。共蒸着は、Ir(ppy)3の濃度が6%になるように蒸着レートをコントロールし、40nm積層させた。次いで、Alq3、フッ化リチウムおよびアルミニウムの薄膜を順次積層して、有機EL素子を得た。この際、蒸着レートは、Alq3およびアルミニウムについては0.2nm/秒、フッ化リチウムについては0.02nm/秒の条件でそれぞれ行い、膜厚は、それぞれ20nm、0.5nmおよび80nmとした。 [7] Preparation and property evaluation of organic EL device [Example 3-1]
The varnish obtained in Example 2-1 was applied to the same ITO substrate as described above from which impurities had been removed using a spin coater, and then dried in the air at 120° C. for 1 minute. Next, the dried ITO substrate was baked at 230° C. for 15 minutes in an air atmosphere to form a uniform thin film of 30 nm on the ITO substrate.
Next, α-NPD(N,N'-di(1-naphthyl)-N, N'- diphenylbenzidine) was deposited at a rate of 0.2 nm/second to a thickness of 30 nm. Next, an electronic block material HTEB-01 manufactured by Kanto Kagaku Co., Ltd. was deposited to a thickness of 10 nm. Next, a light-emitting layer host material NS60 manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. and a light-emitting layer dopant material Ir(ppy) 3 were co-evaporated. In the co-evaporation, the deposition rate was controlled so that the concentration of Ir(ppy) 3 was 6%, and the layers were deposited to a thickness of 40 nm. Then, thin films of Alq 3 , lithium fluoride and aluminum were sequentially laminated to obtain an organic EL device. At this time, the vapor deposition rate was 0.2 nm/sec for Alq 3 and aluminum, and 0.02 nm/sec for lithium fluoride, respectively, and the film thicknesses were 20 nm, 0.5 nm and 80 nm, respectively.
酸素濃度2ppm以下、露点-76℃以下の窒素雰囲気中で、有機EL素子を封止基板の間に収め、封止基板を接着剤((株)MORESCO製、モレスコモイスチャーカットWB90US(P))により貼り合わせた。この際、捕水剤(ダイニック(株)製、HD-071010W-40)を有機EL素子と共に封止基板内に収めた。貼り合わせた封止基板に対し、UV光を照射(波長:365nm、照射量:6,000mJ/cm2)した後、80℃で1時間、アニーリング処理して接着剤を硬化させた。 In order to prevent deterioration of characteristics due to the influence of oxygen, water, etc. in the air, the characteristics of the organic EL element were evaluated after being sealed with a sealing substrate. Sealing was performed by the following procedure.
In a nitrogen atmosphere with an oxygen concentration of 2 ppm or less and a dew point of −76° C. or less, the organic EL element was placed between the sealing substrates, and the sealing substrates were coated with an adhesive (manufactured by MORESCO Co., Ltd., MORESCO Moisture Cut WB90US (P)). pasted together by At this time, a water capturing agent (HD-071010W-40 manufactured by Dainic Co., Ltd.) was placed in the sealing substrate together with the organic EL element. The bonded sealing substrates were irradiated with UV light (wavelength: 365 nm, irradiation amount: 6,000 mJ/cm 2 ) and then annealed at 80° C. for 1 hour to cure the adhesive.
実施例2-1で得られたワニスに代えて、実施例2-2で得られたワニスを用いた以外は、実施例3-1の手順を繰り返し、有機EL素子を得た。 [Example 3-2]
An organic EL device was obtained by repeating the procedure of Example 3-1 except that the varnish obtained in Example 2-2 was used instead of the varnish obtained in Example 2-1.
実施例2-1で得られたワニスに代えて、比較例2-2で得られたワニスを用いた以外は、実施例3-1の手順を繰り返し、有機EL素子を得た。 [Comparative Example 3-1]
An organic EL device was obtained by repeating the procedure of Example 3-1 except that the varnish obtained in Comparative Example 2-2 was used in place of the varnish obtained in Example 2-1.
また、化合物1とパーフルオロスチレンの共重合体からなるポリマーBを用いた実施例3-2の素子では、素子効率と寿命が優れることがわかる。これは、ポリマー中のフッ素原子の割合が向上し、電荷輸送性薄膜の表面改質効果が高まったためと推察される。 As shown in Table 1, the organic EL devices produced in Examples 3-1, 3-2, and Comparative Example 3-1 all exhibit good initial characteristics. It can be seen that the device of Example 3-1 and the device of Example 3-2 using polymer B exhibit better life characteristics than the device of Comparative Example 3-1 using compound 2. It is presumed that this is because the heat resistance of the compound was improved due to the increase in molecular weight due to the polymerization.
It is also found that the element of Example 3-2 using polymer B, which is a copolymer of compound 1 and perfluorostyrene, is excellent in element efficiency and life. It is presumed that this is because the ratio of fluorine atoms in the polymer was increased, and the effect of modifying the surface of the charge-transporting thin film was enhanced.
Claims (15)
- 下記式(1)で表される繰り返し単位を含むことを特徴とするフッ素化アリールスルホン酸ポリマー化合物。
- 前記R’が、フッ化アリール基である請求項2記載のフッ素化アリールスルホン酸ポリマー化合物。 The fluorinated arylsulfonic acid polymer compound according to claim 2, wherein said R' is a fluorinated aryl group.
- 前記ArFが、パーフルオロアリーレン基である請求項1~3のいずれか1項記載のフッ素化アリールスルホン酸ポリマー化合物。 The fluorinated arylsulfonic acid polymer compound according to any one of claims 1 to 3, wherein said Ar F is a perfluoroarylene group.
- 前記ArFが、テトラフルオロフェニレン基である請求項4記載のフッ素化アリールスルホン酸ポリマー化合物。 5. The fluorinated arylsulfonic acid polymer compound of claim 4, wherein said Ar F is a tetrafluorophenylene group.
- 前記ArSが、環上に2つ以上の前記SO3R基を有するアリール基である請求項1~5のいずれか1項記載のフッ素化アリールスルホン酸ポリマー化合物。 The fluorinated arylsulfonic acid polymer compound according to any one of claims 1 to 5, wherein said Ar S is an aryl group having two or more said SO 3 R groups on the ring.
- 前記ArSが、環上に2つ以上の前記SO3R基を有するナフチル基である請求項6記載のフッ素化アリールスルホン酸ポリマー化合物。 7. The fluorinated arylsulfonic acid polymer compound of claim 6, wherein said ArS is a naphthyl group having two or more said SO3R groups on the ring.
- 前記Xが、Oである請求項1~7のいずれか1項記載のフッ素化アリールスルホン酸ポリマー化合物。 The fluorinated arylsulfonic acid polymer compound according to any one of claims 1 to 7, wherein said X is O.
- 請求項1~8のいずれか1項記載のフッ素化アリールスルホン酸ポリマー化合物からなるドーパント物質。 A dopant substance comprising the fluorinated arylsulfonic acid polymer compound according to any one of claims 1 to 8.
- 電荷輸送性物質と、請求項9記載のドーパント物質と、溶媒とを含む電荷輸送性ワニス。 A charge-transporting varnish containing a charge-transporting substance, the dopant substance according to claim 9, and a solvent.
- 前記電荷輸送性物質が、アリールアミン誘導体またはチオフェン誘導体である請求項10記載の電荷輸送性ワニス。 The charge-transporting varnish according to claim 10, wherein the charge-transporting substance is an arylamine derivative or a thiophene derivative.
- 請求項10または11記載の電荷輸送性ワニスから得られた電荷輸送性薄膜。 A charge-transporting thin film obtained from the charge-transporting varnish according to claim 10 or 11.
- 請求項12記載の電荷輸送性薄膜を備える電子素子。 An electronic device comprising the charge-transporting thin film according to claim 12.
- 請求項12記載の電荷輸送性薄膜を備える有機エレクトロルミネッセンス素子。 An organic electroluminescence device comprising the charge-transporting thin film according to claim 12.
- 前記電荷輸送性薄膜が、正孔注入層または正孔輸送層である請求項14記載の有機エレクトロルミネッセンス素子。 The organic electroluminescence device according to claim 14, wherein the charge-transporting thin film is a hole injection layer or a hole transport layer.
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