WO2023005672A1

WO2023005672A1 - Growth substrate assembly and manufacturing method therefor, and manufacturing method for light-emitting assembly

Info

Publication number: WO2023005672A1
Application number: PCT/CN2022/105584
Authority: WO
Inventors: 翟峰
Original assignee: 重庆康佳光电技术研究院有限公司
Priority date: 2021-07-26
Filing date: 2022-07-14
Publication date: 2023-02-02
Also published as: CN115692451A

Abstract

The present application relates to a growth substrate assembly, a manufacturing method therefor, and a manufacturing method for a light-emitting assembly. The growth substrate assembly comprises: a growth substrate, multiple light-emitting chips disposed on the growth substrate, and a hot-melt adhesive layer attached to the growth substrate and partially covering the bottom surface of the light-emitting chips. Positive electrodes and negative electrodes are grown on the bottom surfaces of the light-emitting chips, the bottom surfaces being the surfaces of the light-emitting chips distant from the growth substrate. The positive electrodes, the negative electrodes, and a region between the positive electrodes and the negative electrodes on the bottom surfaces of the light-emitting chips are exposed to the hot-melt adhesive layer.

Description

Growth substrate assembly and manufacturing method thereof, and manufacturing method of light-emitting assembly

technical field

The present application relates to the field of light-emitting chips, in particular to a growth substrate assembly, a manufacturing method thereof, and a manufacturing method of a light-emitting assembly.

Background technique

As a new generation of display technology, Micro-LED has higher photoelectric efficiency, higher brightness, higher contrast, and lower power consumption than existing liquid crystal displays, and can also be combined with flexible panels to achieve flexible show.

The Micro-LED display panel includes several pixel regions SPR (Subpixel Rendering, sub-pixel rendering), each pixel area SPR includes red Micro-LED chips, blue Micro-LED chips, and green Micro-LED chips. In the production process of the display panel, it is necessary to transfer the red Micro-LED chip, the blue Micro-LED chip and the green Micro-LED chip from their respective growth substrates (WAFER) to the display backplane; Taking the transfer process of the chip as an example, the transfer process is as follows:

Bonding the side of the temporary substrate provided with the first adhesive layer to the side of the growth substrate on which the red Micro-LED chip is grown, then peeling off the growth substrate, and transferring the red Micro-LED chip to the temporary substrate;

Bonding the side of the transfer substrate provided with the second adhesive layer with the side of the temporary substrate carrying the red Micro-LED chips, so as to selectively pick up the corresponding red Micro-LED chips from the temporary substrate;

Transfer the red micro-LED chip picked up by the transfer substrate to the corresponding chip bonding area on the display backplane.

In the above chip transfer process, it is necessary to select two kinds of adhesive materials to make the first adhesive layer and the second adhesive layer respectively, and it is necessary to ensure that the viscosity of the first adhesive layer is lower than that of the second adhesive layer, so it is difficult to find a suitable adhesive. materials, and the above transfer process needs to transfer the Micro-LED chip from the growth substrate to the temporary substrate, and from the temporary substrate to the transfer substrate. The transfer efficiency is low and the temporary substrate and the transfer substrate need to be prepared, and the transfer cost is also high.

Therefore, how to improve the transfer efficiency of LED chips and reduce the transfer cost is an urgent problem to be solved at present.

technical problem

In view of the deficiencies of the above-mentioned prior art, the purpose of this application is to provide a growth substrate assembly and its manufacturing method, and a manufacturing method of a light-emitting assembly, aiming to solve the problem of how to improve the transfer efficiency of LED chips and reduce the transfer cost in related technologies .

technical solution

The application provides a growth substrate assembly, including:

growth substrate;

A plurality of light-emitting chips arranged on the growth substrate, positive electrodes and negative electrodes are grown on the bottom surfaces of the plurality of light-emitting chips, and the bottom surface is the side of the light-emitting chips away from the growth substrate;

A hot-melt adhesive layer provided on the growth substrate to partially cover the bottom surface of the light-emitting chip, the positive electrode, the negative electrode, and the connection between the positive electrode and the negative electrode on the bottom surface of the light-emitting chip The area between is exposed to the hot-melt adhesive layer.

Based on the same inventive concept, the present application also provides a method for manufacturing the growth substrate assembly as described above, including:

growing several light-emitting chips on a growth substrate;

A sacrificial layer unit is respectively arranged on the bottom surface of each of the light-emitting chips, and each of the sacrificial layer units separates the positive electrode, the negative electrode, and the area between the positive electrode and the negative electrode on the bottom surface of each of the light-emitting chips. cover;

A hot-melt adhesive layer is formed on the growth substrate, the hot-melt adhesive layer partially covers the bottom surfaces of the plurality of light-emitting chips, and the sacrificial layer unit is exposed to the hot-melt adhesive layer;

After the hot-melt adhesive layer is cured, each of the sacrificial layer units is removed, so that the positive electrode, the negative electrode, and the area between the positive electrode and the negative electrode of each light-emitting chip are exposed to the The hot melt adhesive layer.

Based on the same inventive concept, the present application also provides a method for manufacturing a light-emitting component, including:

Fabricating the growth substrate assembly by the method for fabricating the growth substrate assembly as described above;

The side of the growth substrate on which the light-emitting chip is grown is placed on the circuit board, facing the side of the circuit board where the chip bonding area is provided;

Carrying out first heating to the hot-melt adhesive layer, so that the hot-melt adhesive layer liquefies and then flows onto the circuit board, forming glue columns on both sides of the light-emitting chip;

The light-emitting chip on the growth substrate is peeled off from the growth substrate, and the peeled light-emitting chip falls onto the corresponding chip bonding area along the channels formed by the glue columns on both sides thereof ;

The hot-melt adhesive layer is removed together with the growth substrate, and the pads in each chip bonding area are connected to the positive electrode and the negative electrode of the corresponding light-emitting chip.

Based on the same inventive concept, the present application also provides a light-emitting component, which is manufactured by the method for manufacturing the light-emitting component as described above.

Beneficial effect

The above-mentioned growth substrate assembly is provided with a plurality of light-emitting chips on the growth substrate, and the bottom surface of each light-emitting chip is far away from the growth substrate and has a positive electrode and a negative electrode; layer, and the positive and negative electrodes of the light-emitting chip and the area between them are exposed to the hot melt adhesive layer; when the light-emitting chip on the growth substrate is transferred to the circuit board, the side of the growth substrate with the light-emitting chip After being arranged facing the side of the circuit board with the chip bonding area, the hot melt adhesive layer is heated to at least liquefy (that is, melt) the area covering the bottom surface of the light-emitting chip, and then flows to the circuit board under the action of gravity, and Glue pillars are formed on both sides of each light-emitting chip, so that after the light-emitting chips on the growth substrate are peeled off from the growth substrate, the channels formed by the glue pillars on both sides of the growth substrate fall onto the corresponding chip bonding regions respectively, In this way, the light-emitting chip can be directly transferred to the circuit board. In the whole process, it is no longer necessary to transfer the light-emitting chip from the growth substrate to the temporary substrate, and then from the temporary substrate to the transfer substrate, and it is no longer necessary to prepare the temporary substrate and the transfer substrate. Higher, and lower transfer costs.

The growth substrate assembly obtained by the method for manufacturing the growth substrate assembly described above does not need to transfer the light-emitting chip from the growth substrate to the temporary substrate, and then from the temporary substrate to the circuit board during the process of transferring the light-emitting chip on the growth substrate assembly to the circuit board. Transfer to the transfer substrate, and it is no longer necessary to prepare a temporary substrate and a transfer substrate, the chip transfer efficiency is higher, and the transfer cost is lower.

In the process of transferring the light-emitting chip on the growth substrate assembly to the circuit board in the above method of manufacturing the light-emitting component, it is no longer necessary to transfer the light-emitting chip from the growth substrate to the temporary substrate, and then from the temporary substrate to the transfer substrate. Furthermore, it is necessary to prepare a temporary substrate and a transfer substrate, and the chip transfer efficiency is higher, and the transfer cost is lower, so that the manufacturing efficiency of the light-emitting component is higher, and the manufacturing cost is lower.

The light-emitting chip of the above-mentioned light-emitting assembly is directly transferred from the above-mentioned growth substrate assembly to the circuit board. The entire transfer process does not need to transfer the light-emitting chip from the growth substrate to the temporary substrate, and then from the temporary substrate to the transfer substrate, and no longer needs to prepare the temporary substrate. 1. Transfer the substrate, the chip transfer efficiency is higher, and the transfer cost is lower, so that the manufacturing efficiency of the light-emitting component is higher, and the manufacturing cost is lower.

Description of drawings

Figure 1-1 is a schematic diagram of Micro-LED chips of three colors transferred from the growth substrate to the display backplane in the related art;

Figure 1-2 is a schematic diagram of the process of transferring red light Micro-LED chips in related technologies;

Figure 1-3 is a schematic diagram of the lamination area of the temporary substrate and the growth substrate in the related art;

1-4 are schematic diagrams of temporary substrates carrying red Micro-LED chips in the related art;

Figure 1-5 is a schematic diagram of a temporary substrate after some red Micro-LED chips are picked up in the related art;

Figure 1-6 is a schematic diagram of the display backplane after the Micro-LED chip transfer and bonding are completed;

FIG. 2 is a schematic structural diagram of the growth substrate provided in the embodiment of the present application;

Fig. 3 is a schematic diagram 1 of the structure of the growth substrate assembly provided by the embodiment of the present application;

Fig. 4 is a schematic diagram II of the structure of the growth substrate assembly provided by the embodiment of the present application;

Fig. 5 is a structural schematic diagram III of the growth substrate assembly provided in the embodiment of the present application;

Fig. 6 is a schematic diagram 4 of the structure of the growth substrate assembly provided by the embodiment of the present application;

FIG. 7 is a schematic flowchart of a method for manufacturing a growth substrate assembly provided in another optional embodiment of the present application;

Fig. 8 is a schematic diagram of the manufacturing process of the growth substrate assembly provided by another alternative embodiment of the present application;

Fig. 9 is a schematic diagram of a manufacturing process of a light-emitting component provided in another optional embodiment of the present application;

Fig. 10 is a schematic diagram of the manufacturing process of the light-emitting component provided by another optional embodiment of the present application;

Fig. 11 is a schematic diagram of bonding a growth substrate and a circuit board provided in another optional embodiment of the present application;

Fig. 12 is a schematic diagram of the transfer process of the first light-emitting chip provided in another optional embodiment of the present application;

Fig. 13 is a schematic diagram of the transfer process of the second light-emitting chip provided in another optional embodiment of the present application;

Fig. 14 is a schematic diagram of a third light-emitting chip transfer process provided in another optional embodiment of the present application;

Explanation of reference signs:

10-Growth substrate, 10a-Red chip growth substrate, 10b-Green chip growth substrate, 10c-Blue chip growth substrate, 100-Pixel area SPR, 101-Red Micro-LED chip, 102-Chip vacancies, 20- Temporary substrate, 201-first adhesive layer, 30-transfer substrate, 301-second adhesive layer, 302-display backplane, 4-growth substrate, 41-first growth substrate, 42-second growth substrate, 43 -the third growth substrate, 5-light-emitting chip, 50-electrode, 51-the first light-emitting chip, 52-the second light-emitting chip, 53-the third light-emitting chip, 6-hot-melt adhesive layer, 61-hot-melt glue unit, 62-glue column, 7-sacrificial layer unit, 8-circuit board, 81-welding pad.

Embodiments of the present invention

In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Preferred embodiments of the application are shown in the accompanying drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the application more thorough and comprehensive.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terminology used herein in the description of the application is only for the purpose of describing specific embodiments, and is not intended to limit the application.

In Micro-LED display technology, as shown in Figure 1-1, there are several pixel regions SPR 100 on the display panel, each SPR 100 includes red Micro-LED chips, blue Micro-LED chips, and green Micro-LED chips. When preparing a display panel, it is necessary to grow red Micro-LED chips, blue Micro-LED chips, and green Micro-LED chips from their respective growth substrates (such as the red chip growth substrate 10a and the green chip growth substrate 10a in Figure 1-1). The substrate 10 b and the blue light chip growth substrate 10 c ) are transferred to the display backplane 302 . Taking the transfer process of the red Micro-LED chip as an example, the process of transferring the Micro-LED chip from the growth substrate to the display backplane 302 is introduced, as shown in Figure 1-2 to Figure 1-5:

S201: Attach the side of the temporary substrate 20 provided with the first adhesive layer 201 to the side of the growth substrate 10 on which the red Micro-LED chip 101 is grown; one of the top views after bonding is shown in Figure 1-3 ;

S202 to S203: Peel off the growth substrate 10, and transfer the red Micro-LED chip 101 to the temporary substrate 20; at this time, a top view of the temporary substrate 20 is shown in Fig. 1-4;

S204: Attach the side of the transfer substrate 30 provided with the second adhesive layer 301 to the side of the temporary substrate 20 carrying the red Micro-LED chips 101, so as to selectively pick up the corresponding red Micro-LED chips from the temporary substrate 101. -LED chip 101; as shown in Figures 1-5, the red light Micro-LED chip at the corresponding position on the temporary substrate 20 is picked up, leaving a corresponding chip vacancy 102;

S205: Transfer the red Micro-LED chips picked up by the transfer substrate 20 to corresponding chip bonding areas on the display backplane 302 .

The blue Micro-LED chip and the green Micro-LED chip are also transferred to the display backplane by the above-mentioned chip transfer process in sequence, and the display backplane that completes the transfer of all Micro-LED chips is shown in Figure 1-6.

In the above chip transfer process, two kinds of adhesive materials need to be selected to make the first adhesive layer 201 and the second adhesive layer 301 respectively, and it is necessary to ensure that the viscosity of the first adhesive layer 201 is lower than that of the second adhesive layer 301 , it is difficult to find a suitable material, and the above transfer process needs to transfer the Micro-LED chip from the growth substrate 10 to the temporary substrate 20, from the temporary substrate 20 to the transfer substrate 30, the transfer efficiency is low and the temporary substrate 10 and the transfer substrate 20 need to be prepared , the transfer cost is also higher.

Based on this, the present application hopes to provide a solution capable of solving the above-mentioned technical problems, the details of which will be described in subsequent embodiments.

This embodiment provides a growth substrate assembly, including a growth substrate and several light-emitting chips located on the growth substrate.

Wherein, the growth substrate carries the light-emitting chips in the growth substrate assembly, and in this embodiment, these light-emitting chips can be directly grown on the growth substrate. In this embodiment, the shape and material of the growth substrate are not limited. For example, it can be but not limited to a rectangular substrate, a circular substrate, and its material can be but not limited to a silicon substrate, a gallium nitride substrate, a gallium arsenide substrate, a sapphire substrate. Substrate etc.

Electrodes are grown on the bottom surfaces of several light-emitting chips, and the grown electrodes include positive electrodes and negative electrodes; the bottom surface of the light-emitting chips is the side away from the growth substrate of the light-emitting chips. It should be understood that the light-emitting chip in this embodiment can be replaced with other electronic chips according to application requirements, such as a resistor chip, a capacitor chip, a driver chip, a control chip, etc., which will not be repeated here.

It should be understood that the light-emitting chip in this embodiment can be a miniature light-emitting chip, for example, it can include but not limited to at least one of Mini LED chip and Micro-LED chip, or it can be an ordinary light-emitting chip with a size greater than or equal to 200 microns .

The growth substrate assembly in this embodiment also includes a hot-melt adhesive layer arranged on the growth substrate to partially cover the bottom surface of the light-emitting chip, the positive electrode, the negative electrode, and the area between the positive electrode and the negative electrode on the bottom surface of the light-emitting chip Exposed to the hot-melt adhesive layer; that is, the hot-melt adhesive layer in this embodiment only covers a part of the bottom surface of the light-emitting chip, so that the positive electrode, the negative electrode, and the area between the positive electrode and the negative electrode of the light-emitting chip are exposed . In this embodiment, the positive electrode, the negative electrode, and the area between the positive electrode and the negative electrode of the light-emitting chip can all be exposed to the hot-melt adhesive layer, or only a part of it can be exposed outside the hot-melt adhesive layer, but it is necessary to ensure that the electrode The bottom surface (that is, the side of the electrode away from the growth substrate) is exposed outside the hot-melt adhesive layer. The hot-melt adhesive layer in this embodiment can change from a solidified state to a liquefied (ie melted) state when heated to a certain extent, and flow down along both sides of the light-emitting chip under the action of gravity, so that the heat on both sides of the light-emitting chip A gel column is formed.

It should be noted that the exposure of the positive electrode and the negative electrode of the light-emitting chip to the hot melt adhesive layer in this embodiment does not necessarily mean that the hot melt adhesive layer does not cover any area of the electrode of the light-emitting chip at all, but that the positive electrode of the light-emitting chip And the negative electrode is not completely covered by the hot melt adhesive layer.

And in an example of this embodiment, the hot-melt adhesive layer may be, but not limited to, a non-conductive adhesive layer. Certainly, in some other application examples, the hot-melt adhesive layer may also be a conductive adhesive layer.

In this embodiment, when transferring the light-emitting chip on the growth substrate to the circuit board, after the side of the growth substrate on which the light-emitting chip is grown and the side of the circuit board provided with the chip bonding area are arranged to face each other, the thermal The melt layer is heated to at least liquefy the area covering the bottom surface of the light-emitting chip, and the liquefied hot-melt glue layer flows to the circuit board under the action of gravity, and forms glue columns on both sides of the light-emitting chip, and the light-emitting chip on the growth substrate is After being peeled off from the growth substrate, the channels formed by the glue columns on both sides fall to the corresponding chip bonding areas respectively, so as to realize the direct transfer of the light-emitting chip to the circuit board. The whole process does not need to remove the light-emitting chip from the The growth substrate is transferred to the temporary substrate, and then transferred from the temporary substrate to the transfer substrate. It is no longer necessary to prepare the temporary substrate and the transfer substrate, and the transfer efficiency is higher and the transfer cost is lower. And when the light-emitting chip falls from the growth substrate to the corresponding chip bonding area on the circuit board, it falls along the channel formed by the glue columns on both sides, so as to ensure that the light-emitting chip falls accurately to its corresponding chip bond. And due to the limitation of the glue columns on both sides, it can also avoid the flipping or tilting of the light-emitting chip during the falling process, which can further improve the quality and reliability of chip transfer bonding.

The circuit board in this embodiment may be a display backplane, or various circuit boards for lighting, and may be a flexible circuit board or a rigid circuit board. When it is a display backplane, the display backplane may be, but not limited to, a glass backplane or a PCB board.

In this embodiment, a plurality of chip bonding areas are provided on the circuit board, and bonding pads corresponding to the positive electrodes and the negative electrodes of the light-emitting chip are provided in the chip bonding areas. It should be understood that the number of bonding areas of each chip and the distribution on the circuit board can be flexibly set according to application requirements. For example, the bonding areas of each chip can be distributed in an array on the circuit board, or can be flexibly distributed or even It can be flexibly distributed according to requirements; in some application examples, in order to facilitate the transfer of light-emitting chips directly from the growth substrate to the circuit board, the distribution of each chip bonding area on the circuit board can be consistent with the layout and layout of the corresponding light-emitting chips on the growth substrate. The location corresponds to the distribution.

In this embodiment, the hot-melt adhesive layer can be an integrally formed whole layer of adhesive layer, and can also include several hot-melt adhesive units, one hot-melt adhesive unit corresponds to one light-emitting chip, and each hot-melt adhesive unit is separated from each other. The glue-melting unit partially covers the bottom surface of its corresponding light-emitting chip, and the electrodes of the light-emitting chip are exposed to the hot-melt glue layer.

In addition, it should be understood that, in this embodiment, one light-emitting chip can be set in one chip bonding area, and multiple light-emitting chips can also be set according to requirements. The transfer is done during the chip transfer process.

In some examples of this embodiment, there is a gap between the hot melt adhesive layer and the positive electrode and the negative electrode of the light emitting chip, that is, the hot melt adhesive layer does not directly contact the electrodes of the light emitting chip. This is mainly because when preparing the growth substrate assembly, when the hot melt adhesive layer is set on the growth substrate and the light-emitting chip, the positive electrode and negative electrode of the light-emitting chip are covered and protected by other protective structures (that is, the sacrificial layer unit). Therefore, The hot melt adhesive will not directly cover the surface of the positive electrode and the negative electrode of the light-emitting chip, and the two are separated by a sacrificial layer unit. Even if the sacrificial layer unit is subsequently removed, there will still be a certain gap between the hot melt adhesive layer and the positive and negative electrodes of the light-emitting chip.

In some examples of this embodiment, in addition to the growth substrate, the light-emitting chip, and the hot-melt adhesive layer, the growth substrate assembly also includes several sacrificial layer units. The sacrificial layer units correspond to the light-emitting chips one by one, and cover the light-emitting chip The positive electrode, the negative electrode, and the area between the positive and negative electrodes. That is to say, in the final form of the growth substrate assembly, the sacrificial layer unit is not removed, but remains. It can be understood that, compared with the growth substrate assembly in which the sacrificial layer unit is removed, the sacrificial layer unit on the light-emitting chip can be used in the process of transporting the growth substrate assembly. Protect the area and maintain the quality of the light-emitting chip. Of course, if the sacrificial layer unit is removed during the preparation of the growth substrate assembly, this will naturally facilitate the subsequent application of the growth substrate assembly. For example, when the growth substrate assembly is used to prepare a display panel, it is not necessary to remove the sacrificial layer unit. It is beneficial to improve the preparation efficiency of the display panel, reduce the burden on the display panel manufacturer, and thus enhance the market competitiveness of the growth substrate component.

In some examples, the sacrificial layer unit is a photoresist layer unit, which can be prepared by positive photoresist or negative photoresist. In other examples, the sacrificial layer unit may be a polyvinyl alcohol layer unit.

For ease of understanding, descriptions are given below in conjunction with several exemplary growth substrate assembly structures.

An exemplary growth substrate assembly is shown in FIG. 2 to FIG. 3, which includes a growth substrate 4, a number of light-emitting chips 5 formed on the growth substrate 4, and an electrode 50 is provided on the bottom surface of each light-emitting chip 5, that is, an electrode 50 Located on the side of the light-emitting chip 5 away from the growth substrate 4 , the electrodes 50 include a positive electrode and a negative electrode. The growth substrate assembly further includes a hot-melt adhesive layer 6 disposed on the growth substrate 4 and covering at least a part of the bottom surface of each light-emitting chip 5 . In this example, the hot-melt adhesive layer 6 is flush with the electrodes 50 of the light-emitting chip 5 (i.e., the positive electrode and the negative electrode). 6 can also be slightly higher or slightly lower than the electrode 50. The hot-melt adhesive layer 6 in this example is an integrally formed adhesive layer, that is, the gaps between the light-emitting chips 5 are also filled and covered by the hot-melt adhesive layer 6 .

Another exemplary growth substrate assembly is shown in FIG. 4, which includes a growth substrate 4, a number of light-emitting chips 5 formed on the growth substrate 4, and electrodes 50 (including positive electrodes and negative electrodes) are provided on the bottom surface of each light-emitting chip 5. ). The growth substrate assembly further includes a hot-melt adhesive layer 6 disposed on the growth substrate 4 and covering at least a part of the bottom surface of each light-emitting chip 5 . In this example, the hot-melt adhesive layer 6 is flush with the electrode 50 of the light-emitting chip 5 , and may be slightly higher or slightly lower than the electrode 50 . The hot-melt glue layer 6 in this example includes several hot-melt glue units 61, one hot-melt glue unit 61 corresponds to a light-emitting chip 5, and each hot-melt glue unit 61 is separated from each other, and the hot-melt glue unit 61 lights up its corresponding light-emitting chip 5. The bottom surface of the chip 5 is partially covered, and the bottom surface of the light-emitting chip 5 including the positive electrode, the negative electrode and the area between them are exposed to the hot-melt adhesive unit 61 . The shape of the hot-melt adhesive unit 61 in this embodiment can be set flexibly, for example, it can be an arc as shown in Figure 4, or it can be a rectangle as shown in Figure 5, and of course it can also be other regular shapes, or it can be different. Regular shape, without any limitation here.

It should be understood that, in this embodiment, the hot-melt adhesive layer can also cover at least a part of the area between the positive electrode and the negative electrode of the light-emitting chip, as long as it is ensured that the hot-melt adhesive covering this area can be turned into a liquid state after being heated. Flow along both sides of the light-emitting chip to the circuit board to form a glue column.

According to the foregoing introduction, it can be seen that the positive electrode, the negative electrode, and the area between the positive electrode and the negative electrode of the light-emitting chip 5 are exposed to the hot melt adhesive layer 6, which only means that the positive electrode, the negative electrode, and the area between the two electrodes will not be covered. The hot-melt adhesive layer 6 is completely covered, and they each have some areas exposed to the hot-melt adhesive layer 6. For example, in general, the end face of the free end of the electrode 50 can be exposed to the hot-melt adhesive layer 6. The electrodes 50 of the light-emitting chip 5 are eutectically bonded to the pads on the circuit board. In some examples of this embodiment, although the electrode 50 of the light-emitting chip 5 is exposed to the hot melt adhesive layer 6, the electrode 50 can also be in contact with the hot melt adhesive layer 6, that is, there is a part of the electrode 50 covered by the hot melt adhesive layer. 6, for example, in the light-emitting chip 50 shown in FIG. 3 and FIG. However, in some examples, please continue to refer to FIG. 4, there is no direct contact between the hot melt adhesive layer 6 and the electrode 50 of the light-emitting chip 5, and there are A certain gap. It can be understood that, compared with the situation where the hot melt adhesive layer 6 directly contacts the electrode 50, the solution of setting a gap between the two can prevent the hot melt adhesive layer 6 from affecting the bonding of the light emitting chip 5 and the circuit board, which is conducive to improving the growth rate. The application quality of the light-emitting chip 5 in the substrate assembly.

In some examples of this embodiment, another growth substrate assembly is provided, as shown in FIG. Located on the bottom surface of the light-emitting chip 5, the electrode 50 of the light-emitting chip 5 is covered to ensure that the hot melt adhesive layer 6 does not completely cover the electrode 50 of the light-emitting chip 5 during the process of preparing the growth substrate assembly. It can be understood that during the application process of the growth substrate assembly, the sacrificial layer unit 7 will be removed before the hot melt adhesive layer 6, for example, the sacrificial layer unit 7 may be removed by wet etching, therefore, in this embodiment In this example, when selecting the material of the sacrificial layer unit 7, it should be ensured that the sacrificial layer unit 7 has at least one removal method that meets the requirements, and the removal method that meets the requirements needs to ensure that the hot melt adhesive layer 6 is basically not affected, let alone the luminescence chip5. In some examples of this embodiment, the sacrificial layer unit 7 can be formed of photoresist or polyvinyl alcohol.

In some examples of this embodiment, the sacrificial layer unit 7 may be disposed on the bottom surface of the light-emitting chip 5 by means including but not limited to dispensing, coating, and the like. In some examples, the sacrificial layer unit 7 can completely cover the electrode 50 of the light emitting chip 5 and the area between the two electrodes 50 , as shown in FIG. 6 . In this case, during the subsequent application of the growth substrate assembly, after the sacrificial layer unit 7 is removed, there will be a gap between the hot melt adhesive layer 6 and the electrode 50 , similar to that shown in FIG. 4 . In some examples, the sacrificial layer unit 7 covers the end face of the free end of the electrode 50 and the area between the two electrodes 50, but the partial area on the side of the electrode 50 will not be covered by the sacrificial layer unit 7. In some examples, hot melt adhesive The layer 6 will cover the area on the side of the electrode 50 that is not covered by the sacrificial layer unit 7 , that is, the hot melt adhesive layer 6 may be in direct contact with a part of the electrode 50 of the light emitting chip 5 .

It can be understood that, since the sacrificial layer unit 7 is set first when the growth substrate assembly is prepared, and then the hot-melt adhesive layer 6 is formed, the hot-melt adhesive layer 6 set later may cover the sacrificial layer set earlier. For some areas of unit 7, please continue to refer to FIG. 6 .

The growth substrate 4 in this embodiment may include, but not limited to, a growth substrate for growing red light-emitting chips, a growth substrate for growing green light-emitting chips, a growth substrate for growing blue light-emitting chips, a growth substrate for growing ultraviolet light-emitting chips, etc. It can be flexibly set according to application requirements. In this embodiment, when the light-emitting chip 5 on the growth substrate 4 is transferred to the circuit board, after the side of the growth substrate 4 on which the light-emitting chip 5 is grown and the side of the circuit board where the chip bonding area is provided face to face, Heat the hot-melt adhesive layer 6 to at least liquefy the area covering the bottom surface of the light-emitting chip 5, and the liquefied hot-melt adhesive layer 6 flows to the circuit board under the action of gravity, and forms glue columns on both sides of the light-emitting chip. After the light-emitting chip 5 on the growth substrate 4 is peeled off from the growth substrate 4, it falls to the corresponding chip bonding area along the channels formed by the glue columns on both sides, so as to realize the direct and precise transfer of the light-emitting chip 5 On the circuit board, the whole process is fast and simple, and there is no need to transfer the light-emitting chip from the growth substrate to the temporary substrate, and then from the temporary substrate to the transfer substrate, and it is no longer necessary to prepare the temporary substrate and the transfer substrate, the transfer efficiency is higher, and Transfer costs are lower.

Another optional embodiment:

For ease of understanding, this embodiment will be described below with an example manufacturing method of the above-mentioned growth substrate assembly, as shown in FIG. 7 , which includes but is not limited to:

S701: growing several light-emitting chips on the growth substrate, electrodes (including positive electrodes and negative electrodes) are grown on the bottom surfaces of the several light-emitting chips, and the bottom surface of the light-emitting chips is the side away from the growth substrate of the light-emitting chips.

It should be understood that, in this embodiment, various light-emitting chip growth methods may be used for growing the light-emitting chip on the growth substrate, which is not limited here.

S702: Arrange sacrificial layer units on the bottom surface of each light-emitting chip, and each sacrificial layer unit covers the positive electrode, the negative electrode, and the area between the positive electrode and the negative electrode on the bottom surface of each light-emitting chip.

In this embodiment, the size and shape of each sacrificial layer unit is not limited, it only needs to completely cover the positive electrode, the negative electrode and the area between the two of the light-emitting chip and not completely cover the bottom surface of the light-emitting chip.

In this embodiment, the formation method and specific material of the sacrificial layer unit can be flexibly selected. For example, in some examples, the sacrificial layer unit can be but not limited to a photoresist layer unit or a polyvinyl alcohol layer unit. As long as the hot melt adhesive layer is subsequently formed on it, it can be removed. It can be understood that when using a growth substrate assembly to prepare a light-emitting assembly (such as a display panel), it is necessary to transfer and bond the light-emitting chip in the growth substrate assembly to a corresponding circuit board. The chip is peeled off from the growth substrate and the hot melt adhesive layer, and the sacrificial layer unit attached to the bottom surface of the light-emitting chip needs to be removed. Therefore, the sacrificial layer

S703: forming a hot-melt adhesive layer on the growth substrate, the hot-melt adhesive layer partially covers the bottom surfaces of the plurality of light-emitting chips, and the sacrificial layer units are exposed to the hot-melt adhesive layer, so as to facilitate subsequent removal of the sacrificial layer units.

S704: After the hot-melt adhesive layer is cured, remove each sacrificial layer unit, so that the positive electrode, the negative electrode, and the area between the positive electrode and the negative electrode on the bottom surface of each light-emitting chip are exposed to the hot-melt adhesive layer.

For example, when the sacrificial layer unit is a photoresist unit, the photoresist unit can be washed away, so that the electrode of the light emitting chip covered by it is exposed to the hot melt adhesive layer.

In the field of Micro-LED display, the number of Micro-LED chips transferred to the display backplane is basically tens of thousands or more. Therefore, after the Micro-LED chip is completed, it is difficult to detect the dead pixels on the display backplane, and even if the bad pixels are detected, it is difficult to repair them. Even if they are repaired, the repair process is complicated. In addition, when transferring Micro-LED chips, the entire surface of the Micro-LED chips on the growth substrate is lifted off by laser, and all Micro-LED chips are transferred to the temporary substrate, resulting in the final preparation of Micro-LED display devices. The quality of the upper chip is uncontrollable, and the maintenance cost in the later stage is relatively high; in addition, because the light-emitting wavelength of the Micro-LED chip cannot be selected in advance, the final display device has poor light-emitting uniformity. To solve this problem, in this embodiment, in the above step S702, before setting the sacrificial layer unit on the bottom surface of each light-emitting chip, it may also include but not limited to:

Detect each light-emitting chip on the growth substrate, and remove the unqualified light-emitting chip from the growth substrate; so that the light-emitting chips left on the growth substrate are all qualified light-emitting chips, and try to avoid the light-emitting chips transferred to the circuit board. The occurrence of dead pixels on the chip, so as to avoid subsequent detection and repair of dead pixels as much as possible, improve product quality and reduce maintenance costs.

In this embodiment, detecting each light-emitting chip on the growth substrate may include but not limited to at least one of the following:

Detect the appearance of each light-emitting chip;

The optical characteristics of each light-emitting chip are detected.

For example, in one example, the optical specificity and appearance quality of the light-emitting chip on the growth substrate can be generated in advance by not limited to the Micro PL/AOI detection method, and the corresponding mapping data can be generated to determine the unqualified light emission. chip and remove it from the growth substrate.

In some examples of this embodiment, detecting the optical characteristics of each light-emitting chip may include but not limited to: detecting the main wavelength of each light-emitting chip, and if the difference between the main wavelength and the preset standard main wavelength is greater than the preset The light-emitting chip with the difference value is judged as an unqualified light-emitting chip, so that the dominant wavelength consistency of the light-emitting chip remaining on the growth substrate is good, and the uniformity of light emission of the light-emitting component is improved, so that the display effect or lighting effect is better. good.

For ease of understanding, the following uses the sacrificial layer unit as the photoresist layer unit to illustrate the process of manufacturing the growth substrate assembly shown in Figure 4 as an example; the manufacturing process of the growth substrate assembly shown in Figure 3 and Figure 5 is similar, No more details here.

An example of making the growth substrate assembly shown in Figure 4 is shown in Figure 8, which includes but is not limited to:

S801: grow several light-emitting chips 5 on the growth substrate 4, electrodes 50 (including positive electrodes and negative electrodes) are grown on the bottom surfaces of the several light-emitting chips 5, and the bottom surface of the light-emitting chips 5 is the side away from the growth substrate of the light-emitting chips 5.

It should be understood that, the way of growing the light-emitting chip 5 on the growth substrate in this example can adopt various ways of growing the light-emitting chip 5 , which will not be repeated here.

S802: Set sacrificial layer units 7 on the bottom surfaces of the light emitting chips 5 respectively, and each sacrificial layer unit 7 respectively covers the positive electrode, the negative electrode and the area between the positive electrodes and the negative electrodes on the bottom surface of each light emitting chip.

In this example, the shape of each sacrificial layer unit 7 is arc, and the shape of each sacrificial layer unit 7 is the same, of course, some of them may be the same and some of them may be different. And its shape is not limited to arc, it can also be rectangular, etc., which will not be repeated here.

S803: Forming several hot-melt glue units 61 on the growth substrate 4, the several hot-melt glue units 61 respectively cover a part of the bottom surface of several light-emitting chips 5, and the sacrificial layer unit 7 is exposed to the hot-melt glue units 61, so as to facilitate subsequent Removal of the sacrificial layer unit 7.

S804: After the hot-melt adhesive layer is cured, remove each sacrificial layer unit 7, so that the positive electrode, the negative electrode, and the area between the positive electrode and the negative electrode on the bottom surface of each light-emitting chip 5 are exposed to the hot-melt adhesive unit 61, thereby manufacturing The growth substrate assembly shown in Figure 4 was obtained.

It should be understood that, if the growth substrate assembly to be prepared is the growth substrate assembly shown in FIG. 6 , it is not necessary to remove the sacrificial layer unit 7, and the growth substrate assembly can be directly produced after the hot melt adhesive layer is solidified. .

It can be seen that the manufacturing method of the growth substrate assembly provided by this embodiment is simple, convenient and efficient. When the light-emitting chip on the growth substrate assembly is transferred to the circuit board, it is no longer necessary to transfer the light-emitting chip from the growth substrate to the temporary substrate, and then from the temporary substrate to the transfer substrate, and it is no longer necessary to prepare the temporary substrate and the transfer substrate, The chip transfer efficiency is higher, and the transfer cost is lower.

Yet another optional embodiment:

This embodiment also provides a light-emitting assembly, which is made by using the growth substrate assembly in the above-mentioned embodiments. For ease of understanding, this embodiment will be described below by taking a manufacturing method of a light-emitting component as an example. Please refer to Fig. 9, the manufacturing method of the light-emitting component may include but not limited to:

S901: Fabricate a growth substrate assembly; in this embodiment, it can be produced by but not limited to the method for fabricating the growth substrate assembly shown in the above embodiments, and will not be repeated here.

S902: Arranging the side of the growth substrate on which the light-emitting chip is grown on the circuit board, facing the side of the circuit board provided with the chip bonding area.

In this embodiment, the side of the growth substrate on which the light-emitting chip is grown is placed on the circuit board, and when it is arranged opposite to the side of the circuit board provided with the chip bonding area, the positive electrode and the negative electrode of the light-emitting chip are in contact with the circuit board. The corresponding pads in the bonding area of the upper chip can be directly contacted, and there is a certain gap between the hot melt adhesive layer and the circuit board.

Of course, in this embodiment, when the side of the growth substrate on which the light-emitting chip is grown is arranged on the circuit board, and is arranged in a position opposite to the side of the circuit board provided with the chip bonding area, the electrodes of the light-emitting chip and the chip on the circuit board A certain gap can also be reserved between the corresponding pads in the bonding area, and there is a certain gap between the hot-melt adhesive layer and the circuit board.

S903: performing first heating on the hot-melt adhesive layer, so that the hot-melt adhesive layer liquefies and then flows onto the circuit board to form adhesive columns on both sides of the light-emitting chip.

Of course, after the first heating of the hot-melt adhesive layer, other regions of the hot-melt adhesive layer may also be liquefied. Moreover, the temperature and heating time specifically adopted for the first heating in this embodiment can be flexibly set according to the specific material of the hot-melt adhesive layer and the required liquefaction state of the hot-melt adhesive layer, and there is no limitation here.

S904: Peel off the light-emitting chip on the growth substrate from the growth substrate, and drop the peeled light-emitting chip onto the respective corresponding chip bonding regions along the channels formed by the glue columns on both sides thereof.

In this embodiment, the method of peeling off the light-emitting chip on the growth substrate from the growth substrate can be flexibly adopted, for example, but not limited to, laser lift-off method can be used.

In this embodiment, when the light-emitting chip falls from the growth substrate to the corresponding chip bonding area on the circuit board, it falls along the channels formed by the glue columns on both sides, so as to ensure that the light-emitting chip falls accurately to its bonding area. The corresponding chip bonding area, and due to the limitation of the glue columns on both sides, can also prevent the light-emitting chip from flipping or tilting during the falling process, which can further improve the quality and reliability of chip transfer bonding.

S905: Remove the hot-melt adhesive layer together with the growth substrate, and connect the pads in the bonding regions of each chip to the positive electrode and the negative electrode of the corresponding light-emitting chip. In this step, since the growth substrate is made of sapphire and other materials, the circuit board is densely covered with metal circuits and an inorganic protective layer; the characteristic of the hot-melt adhesive layer is that it has poor wettability with metal, so it is easier to separate from the circuit board ; In addition, even if the hot-melt adhesive layer remains on the circuit board, when the electrodes of the light-emitting chip and the pads in the chip bonding area are subsequently heated and welded, the hot-melt adhesive layer will also gather in the place where there is no metal solder, and will not Interfere with the electrical connection of the light-emitting chip.

In some examples of this embodiment, in order to facilitate the removal of the hot-melt adhesive layer, removing the hot-melt adhesive layer together with the growth substrate in S905 includes:

After the hot-melt adhesive layer is heated for a second time to further liquefy, the hot-melt adhesive layer is removed together with the growth substrate. In some examples of this embodiment, in order to make the hot melt adhesive layer follow the growth substrate better after the second heating, it can be selected to heat the hot melt adhesive layer from the side away from the growth substrate, so that the hot melt adhesive The part of the layer away from the growth substrate will melt first, and the adhesion between the hot melt adhesive layer and the circuit board will be reduced; at the same time, the side of the hot melt adhesive layer close to the growth substrate is not completely melted, and its contact with the growth substrate There is still a large bonding force between them, which can ensure that the hot melt adhesive layer is removed along with the growth substrate.

It can be seen that in the production of light-emitting components, the side of the growth substrate on which the light-emitting chip is grown can be directly aligned with the circuit board, and then the hot-melt adhesive layer is heated to at least liquefy the area covering the bottom surface of the light-emitting chip. Under the action of gravity, the glue layer flows along both sides of the light-emitting chip to the circuit board to form glue columns. At this time, the light-emitting chips on the growth substrate are peeled off from the growth substrate, and then follow the channels formed by the glue columns on both sides. Falling onto the corresponding chip bonding area, so as to realize the direct transfer of the light-emitting chip to the circuit board, the entire chip transfer process does not need a temporary substrate, transfer substrate or transfer head, the production efficiency is higher, and the production cost is lower .

For ease of understanding, this embodiment will be described below in conjunction with an application scenario as an example. In this application scenario, the light-emitting chips set on the circuit board are light-emitting chips of the same color. The manufacturing process of the light-emitting component in this application scenario is shown in Figure 10, which includes but is not limited to:

S1001: Place the side of the growth substrate 4 on which the light-emitting chip 5 grows on the circuit board 8, and set it opposite to the side of the circuit board 8 provided with the chip bonding area, wherein the chip bonding area is provided with the light-emitting chip 5 The positive electrode and the negative electrode respectively correspond to the pads 81.

In this embodiment, when the side of the growth substrate 4 on which the light-emitting chip 5 is grown is placed on the circuit board 8, and is positioned opposite to the side of the circuit board 8 provided with the chip bonding area, the positive electrode of the light-emitting chip 5 and the At least one of the negative electrodes is in direct contact with the corresponding pad 81 in the chip bonding area on the circuit board 8 , as shown in FIG. 11 , and there is a certain gap between the hot melt glue unit 61 and the circuit board 4 .

Of course, in this embodiment, when the side of the growth substrate 4 on which the light-emitting chip 5 is grown is set on the circuit board 8, and is arranged in a position opposite to the side of the circuit board 8 provided with the chip bonding area, the front side of the light-emitting chip 5 A certain gap can also be reserved between the electrode and the negative electrode and the corresponding pad 81 in the chip bonding area on the circuit board 8, and there is a certain gap between the hot-melt glue unit 61 and the circuit board 8, as shown in FIG. 10 .

S1002: First heat the hot-melt glue unit 61 to make it liquefy at least the area covered on the bottom surface and flow to the circuit board along the two sides of the light-emitting chip 5 under the action of gravity to form glue columns 62, so as to play a relatively fixed effect, and the glue column 62 forms a channel for the light-emitting chip 5 to fall onto the circuit board; the light-emitting chip 5 on the growth substrate 4 is peeled off from the growth substrate 4, and the peeled light-emitting chip 5 falls along the above-mentioned channel to the on the corresponding chip bonding area.

Of course, after the first heating of the hot-melt glue unit 61 , other regions of the hot-melt glue unit 61 may also be liquefied. Moreover, the temperature and heating time specifically adopted for the first heating in this embodiment can be flexibly set according to the specific material of the hot-melt glue unit 61 and the required liquefaction state of the hot-melt glue unit 61 , which is not limited here.

S1003: Remove the hot-melt adhesive unit 61 together with the growth substrate 4, and connect the pads 81 in each chip bonding area to the positive electrodes and negative electrodes of the respective corresponding light-emitting chips 5.

For example, the hot-melt glue unit 61 can be heated for a second time to further liquefy, and then the hot-melt glue unit 61 can be removed together with the growth substrate.

In this step, even if the hot-melt adhesive remains on the circuit board, when the electrodes of the light-emitting chip and the pads in the chip bonding area are subsequently heated and soldered, the hot-melt adhesive layer will gather in the place where there is no solder, and will not Interfere with the electrical connection of the light-emitting chip.

For ease of understanding, this embodiment will be described below in conjunction with another application scenario as an example. In this example, the growth substrate includes a first light-emitting chip (for example, a red light-emitting chip), a second light-emitting chip (for example, a green light-emitting chip) and a third light-emitting chip (for example, a blue light-emitting chip). A growth substrate, a second growth substrate and a third growth substrate.

The process of sequentially transferring the first light-emitting chip, the second light-emitting chip and the third light-emitting chip to the circuit board is taken as an example to describe below.

The process of transferring the first light-emitting chip to the circuit board is shown in Figure 12, including:

S1201: Place the side of the first growth substrate 41 on which the first light-emitting chip 51 grows on the circuit board 8, and set it opposite to the side of the circuit board 8 provided with the chip bonding area, wherein the chip bonding area is provided with Pads 81 corresponding to positive and negative electrodes of the first light emitting chip 51 .

S1202: First heat the hot-melt glue unit 61 to make it liquefy at least the area covered on the bottom surface and flow to the circuit board along both sides of the first light-emitting chip 51 under the action of gravity to form glue columns 62, thereby Relatively fixed and the role of forming a channel for the first light-emitting chip 51 to fall; the first light-emitting chip 51 on the first growth substrate 41 is peeled off from the first growth substrate 4, and the first light-emitting chip 51 after peeling is along its two sides. The channels formed by the glue pillars 62 respectively fall on the respective corresponding chip bonding regions.

S1203: After the second heating is performed on the hot-melt glue unit 61 to further liquefy it, the hot-melt glue unit 61 is removed together with the first growth substrate 41 .

The process of transferring the second light-emitting chip to the circuit board is shown in Figure 13, including:

S1301: Place the side of the second growth substrate 42 on which the second light-emitting chip 52 grows on the circuit board 8, and set it opposite to the side of the circuit board 8 provided with the chip bonding area, wherein the chip bonding area is provided with Pads 81 corresponding to positive and negative electrodes of the second light emitting chip 52 .

Referring to FIG. 13 , the previously transferred first light emitting chip 51 will not interfere with the subsequently transferred second light emitting chip 52 on the circuit board 8 .

S1302: First heat the hot-melt glue unit 61 to liquefy at least the area covered on the bottom surface and flow to the circuit board along the two sides of the second light-emitting chip 52 under the action of gravity to form the glue column 62, so as to play a relatively The role of fixing and forming a channel for the second light-emitting chip 52 to fall; and peeling the second light-emitting chip 52 on the second growth substrate 42 from the first growth substrate 4, and the peeled second light-emitting chip 52 along its two sides The channels formed by the glue pillars 62 respectively fall on the respective corresponding chip bonding regions.

S1303: The hot-melt glue unit 61 may be heated for a second time to be further liquefied, and then the hot-melt glue unit 61 is removed together with the second growth substrate 42 .

The process of transferring the third light-emitting chip to the circuit board is shown in Figure 14, including:

S1401: Place the side of the third growth substrate 43 on which the third light-emitting chip 53 grows on the circuit board 8, and set it opposite to the side of the circuit board 8 provided with the chip bonding area, wherein the chip bonding area is provided with Pads 81 corresponding to positive and negative electrodes of the third light emitting chip 53 .

Referring to FIG. 13 , the previously transferred first light emitting chip 51 and the second light emitting chip 52 on the circuit board 8 will not interfere with the subsequent transferred third light emitting chip 53 .

S1402: First heat the hot-melt glue unit 61 to liquefy at least the area covered on the bottom surface and flow to the circuit board along the two sides of the third light-emitting chip 53 to form glue columns 62 under the action of gravity, so as to play a relatively The role of fixing and forming a channel for the third light-emitting chip 53 to fall; peeling the third light-emitting chip 53 on the third growth substrate 43 from the first growth substrate 4, and the third light-emitting chip 53 after peeling is along the sides of the third light-emitting chip 53. The channels formed by the glue pillars 62 drop onto the corresponding chip bonding areas respectively.

S1403: The hot-melt glue unit 61 may be heated for a second time to be further liquefied, and then the hot-melt glue unit 61 is removed together with the third growth substrate 43 .

In this example, the positive electrode and the negative electrode of the first light-emitting chip 51, the second light-emitting chip 52, and the third light-emitting chip 53 can be welded to the pad 81 in the chip bonding area at one time, thereby improving welding efficiency and Consistency of welding. Of course, the welding of the positive electrode, the negative electrode and the welding pad can also be completed after each transfer of the light-emitting chip. And it should be understood that the transfer order of the first light emitting chip 51 , the second light emitting chip 52 and the third light emitting chip 53 can be flexibly adjusted, and is not limited to the order of the above examples, and will not be repeated here.

It can be seen that in the process of chip transfer of the above-mentioned multiple luminescent colors, there is no need to transfer the light-emitting chip from the growth substrate to the temporary substrate, and then from the temporary substrate to the transfer substrate, and it is no longer necessary to prepare the temporary substrate, the transfer substrate, and the chip transfer. The efficiency is higher, and the transfer cost is lower, so that the manufacturing efficiency of the light-emitting component is higher, and the manufacturing cost is lower.

This embodiment also provides a display screen, which can be a flexible display screen or a rigid display screen, and it can be a display screen of a regular shape, such as a rectangle, a circle, an ellipse, etc., or a display screen of a special shape. Screen. The display screen includes a display screen frame and a display panel as shown in the above examples, the display panel is made of the above-mentioned light-emitting components, and the display panel is fixed in the display screen frame. It should be understood that the display screen in this embodiment can be applied to various electronic devices, such as monitors, computers, mobile phones, smart watches, vehicle-mounted devices, billboards, and the like. The display screen has higher production efficiency, lower cost, better yield rate, higher light extraction efficiency and better display effect.

It should be understood that the application of the present application is not limited to the above examples, and those skilled in the art can make improvements or changes based on the above descriptions, and all these improvements and changes should belong to the protection scope of the appended claims of the present application.

Claims

A growth substrate assembly comprising:

growth substrate;

A plurality of light-emitting chips arranged on the growth substrate, positive electrodes and negative electrodes are grown on the bottom surfaces of the plurality of light-emitting chips, and the bottom surface is the side of the light-emitting chips away from the growth substrate;

A hot-melt adhesive layer attached to the growth substrate and partially covering the bottom surface of the light-emitting chip, the positive electrode, the negative electrode, and the connection between the positive electrode and the negative electrode on the bottom surface of the light-emitting chip The area between is exposed to the hot-melt adhesive layer.
The growth substrate assembly according to claim 1, wherein the hot-melt adhesive layer includes several hot-melt adhesive units, one of the hot-melt adhesive units corresponds to one of the light-emitting chips, and each of the hot-melt adhesive units is separated from each other , the hot-melt adhesive unit partially covers the bottom surface of the corresponding light-emitting chip.
The growth substrate assembly according to claim 1, wherein the hot melt adhesive layer is flush with the positive electrode and the negative electrode of the light emitting chip.
The growth substrate assembly according to claim 1, wherein the hot-melt adhesive layer is a non-conductive adhesive layer.
The growth substrate assembly according to claim 1, wherein there is a gap between the hot melt adhesive layer and the positive electrode and the negative electrode.
The growth substrate assembly according to claim 1, further comprising a plurality of sacrificial layer units corresponding to the light-emitting chips one by one, the sacrificial layer units covering the positive electrodes, The negative electrode and the region between the positive electrode and the negative electrode.
The growth substrate assembly according to claim 6, wherein the sacrificial layer unit is a photoresist layer unit.
The growth substrate assembly according to claim 6, wherein the sacrificial layer unit is a polyvinyl alcohol layer unit.
The growth substrate assembly according to claim 6, wherein at least one part of the sacrificial layer unit is covered by the hot-melt adhesive layer.
A method for manufacturing a growth substrate assembly as claimed in claim 1, comprising:

growing several light-emitting chips on a growth substrate;

A sacrificial layer unit is respectively arranged on the bottom surface of each of the light-emitting chips, and each of the sacrificial layer units respectively connects the positive electrode, the negative electrode, and the positive electrode and the negative electrode on the bottom surface of each of the light-emitting chips. area coverage between

A hot-melt adhesive layer is formed on the growth substrate, the hot-melt adhesive layer partially covers the bottom surfaces of the plurality of light-emitting chips, and the sacrificial layer unit is partially exposed to the hot-melt adhesive layer;

After the hot-melt adhesive layer is cured, remove each sacrificial layer unit, so that the positive electrode, the negative electrode, and the area between the positive electrode and the negative electrode on the bottom surface of each light-emitting chip exposed to the hot melt adhesive layer.
The manufacturing method of the growth substrate assembly according to claim 10, wherein the sacrificial layer unit is a photoresist layer unit.
The method for manufacturing a growth substrate assembly according to claim 10, wherein the sacrificial layer unit is a polyvinyl alcohol layer unit.
The method for manufacturing a growth substrate assembly according to claim 10, wherein, before arranging the sacrificial layer unit on the bottom surface of each of the light-emitting chips, further comprising:

Detecting each of the light-emitting chips on the growth substrate;

removing the unqualified light-emitting chip from the growth substrate;

The detecting each of the light-emitting chips on the growth substrate includes at least one of the following:

Detecting the appearance of each of the light-emitting chips;

The optical characteristics of each of the light-emitting chips are detected.
The method for manufacturing a growth substrate assembly according to claim 13, wherein said detecting the optical characteristics of each of said light-emitting chips comprises:

The dominant wavelength of each light-emitting chip is detected.
A method for manufacturing a light-emitting component, including:

Manufacturing the growth substrate assembly by the method for manufacturing the growth substrate assembly as claimed in claim 10;

The side of the growth substrate on which the light-emitting chip is grown is placed on the circuit board, facing the side of the circuit board where the chip bonding area is provided;

Carrying out first heating to the hot-melt adhesive layer, so that the hot-melt adhesive layer liquefies and then flows onto the circuit board, forming glue columns on both sides of the light-emitting chip;

The light-emitting chip on the growth substrate is peeled off from the growth substrate, and the peeled light-emitting chip falls onto the corresponding bonding area of the chip along the channels formed by the glue columns on both sides thereof;

The hot-melt adhesive layer is removed together with the growth substrate, and the pads in each chip bonding area are connected to the positive electrode and the negative electrode of the corresponding light-emitting chip.
The manufacturing method of a light-emitting component according to claim 15, wherein said removing said hot-melt adhesive layer together with said growth substrate comprises:

After the hot-melt adhesive layer is heated for a second time to further liquefy, the hot-melt adhesive layer is removed together with the growth substrate.
The manufacturing method of a light-emitting component according to claim 16, wherein the second heating is heating the hot-melt adhesive layer from a side of the hot-melt adhesive layer away from the growth substrate.