WO2023002592A1 - 固体撮像素子およびその製造方法、並びに電子機器 - Google Patents

固体撮像素子およびその製造方法、並びに電子機器 Download PDF

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WO2023002592A1
WO2023002592A1 PCT/JP2021/027268 JP2021027268W WO2023002592A1 WO 2023002592 A1 WO2023002592 A1 WO 2023002592A1 JP 2021027268 W JP2021027268 W JP 2021027268W WO 2023002592 A1 WO2023002592 A1 WO 2023002592A1
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pixel
solid
state imaging
imaging device
photoelectric conversion
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French (fr)
Japanese (ja)
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博 馬
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Priority to PCT/JP2021/027268 priority patent/WO2023002592A1/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/021—Manufacture or treatment of image sensors covered by group H10F39/12 of image sensors having active layers comprising only Group III-V materials, e.g. GaAs, AlGaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Definitions

  • the present disclosure relates to a solid-state imaging device, a manufacturing method thereof, and an electronic device, and in particular, a solid-state imaging device capable of suppressing dark current in a solid-state imaging device using a compound semiconductor, a manufacturing method thereof, and an electronic device. Regarding.
  • a solid-state imaging device using a compound semiconductor such as InGaAs as a photoelectric conversion layer is known (see Patent Document 1, for example).
  • a P-type diffusion region in which a P-type impurity such as Zn (zinc) is diffused is formed for each pixel as a pixel electrode for reading signal charges generated in the photoelectric conversion unit.
  • the present disclosure has been made in view of such circumstances, and is intended to suppress dark current in a solid-state imaging device using a compound semiconductor.
  • a solid-state imaging device is arranged between a photoelectric conversion layer containing a compound semiconductor, a pixel electrode for extracting an electric charge generated in the photoelectric conversion layer for each pixel, and the pixel electrode of each pixel. and a pixel separator.
  • a method for manufacturing a solid-state imaging device includes forming a pixel separation portion at a pixel boundary on a surface opposite to a light incident surface of a photoelectric conversion layer containing a compound semiconductor, and forming a pixel separation portion inside the pixel separation portion. and forming a pixel electrode for extracting the charge generated in the photoelectric conversion layer for each pixel.
  • An electronic device includes a photoelectric conversion layer containing a compound semiconductor, a pixel electrode for extracting electric charges generated in the photoelectric conversion layer for each pixel, and the pixel electrode disposed between each pixel. and a solid-state imaging device having a pixel separation section.
  • a photoelectric conversion layer containing a compound semiconductor, a pixel electrode for extracting electric charges generated in the photoelectric conversion layer for each pixel, and disposed between the pixel electrode of each pixel and a pixel separation section are provided.
  • a pixel separation portion is formed at a pixel boundary on a surface opposite to a light incident surface of a photoelectric conversion layer containing a compound semiconductor, and the photoelectric conversion layer is formed inside the pixel separation portion.
  • a pixel electrode is formed for extracting the generated charge for each pixel.
  • the solid-state imaging device and electronic equipment may be independent devices, or may be modules incorporated into other devices.
  • FIG. 1 is a cross-sectional view of a first embodiment of a pixel array region according to the present disclosure
  • FIG. FIG. 2 is a diagram for explaining the potential of a pixel in FIG. 1
  • FIG. 2A and 2B are diagrams illustrating a method of manufacturing the pixel of FIG. 1
  • FIG. FIG. 4 is a cross-sectional view of a second embodiment of a pixel array region according to the present disclosure
  • 6 is a diagram showing the pixel circuit of FIG. 5
  • FIG. It is a block diagram showing a configuration example of an imaging device as an electronic device to which the present technology is applied.
  • 1 is a block diagram showing an example of a schematic configuration of a vehicle control system
  • FIG. FIG. 4 is an explanatory diagram showing an example of installation positions of an outside information detection unit and an imaging unit;
  • the definitions of directions such as up and down in the following description are merely definitions for convenience of description, and do not limit the technical idea of the present disclosure. For example, if an object is observed after being rotated by 90°, the upper and lower sides are converted to the left and right when read, and if the object is observed after being rotated by 180°, the upper and lower sides are reversed and read.
  • FIG. 1 is a cross-sectional view of a first embodiment of a pixel array region according to the present disclosure.
  • the pixel array region 1 is configured by arranging pixels Px two-dimensionally in a matrix.
  • the pixel array region 1 shown in FIG. 1 shows a cross-sectional view of two pixels Px arranged horizontally or vertically. ing.
  • the pixel array region 1 is employed as a pixel array region of a solid-state imaging device that photoelectrically converts light in the visible region (eg, 380 nm to less than 780 nm) and short infrared region (eg, 780 nm to less than 2400 nm).
  • the pixel array region 1 is configured by laminating the element substrate 10 and the circuit substrate 30 .
  • a dashed line in FIG. 1 indicates a joint surface between the element substrate 10 and the circuit substrate 30 .
  • the element substrate 10 is a substrate that generates signal charges by photoelectrically converting light incident from the upper surface of FIG. 1 (the surface opposite to the circuit board 30 side).
  • the circuit board 30 is a board on which a readout circuit for reading signal charges generated in the element substrate 10 is formed.
  • the element substrate 10 has a semiconductor layer 11 .
  • the semiconductor layer 11 is configured by stacking, for example, a pixel electrode (pixel electrode layer) 12, a photoelectric conversion layer 13, and a barrier layer 14 from the circuit board 30 side.
  • the pixel electrode 12 functions as a lower electrode (first electrode) of two electrodes sandwiching the photoelectric conversion layer 13 from above and below, and transfers signal charges generated by the photoelectric conversion layer 13 to the circuit board 30 for each pixel Px. It is a semiconductor layer for reading out.
  • the upper surface, which is one surface of the pixel electrode 12 is connected to the photoelectric conversion layer 13
  • the lower surface, which is the other surface on the opposite side, is connected to the contact electrode 17 .
  • the pixel electrode 12 is made of the same compound semiconductor material as that of the photoelectric conversion layer 13, or a compound semiconductor material having a larger bandgap than the same compound semiconductor material, and is formed by diffusing a P-type impurity such as Zn (zinc).
  • InGaAs indium gallium arsenide
  • InP indium phosphide
  • the compound semiconductor material having a bandgap larger than that of the compound semiconductor material of the photoelectric conversion layer 13 can be used as the compound semiconductor material having a bandgap larger than that of the compound semiconductor material of the photoelectric conversion layer 13 .
  • the impurity concentration of the pixel electrode 12 formed of the P-type diffusion region is formed so as to gradually decrease from the contact electrode 17 side toward the photoelectric conversion layer 13 side.
  • the impurity concentration of the pixel electrode 12 is, from the side near the contact electrode 17, a high concentration region 21 having a first concentration (P++), which is the highest concentration, and a second concentration (P+), which is an intermediate concentration.
  • the region 22 is a low concentration region 23 having a third concentration (P-) lower than the second concentration.
  • the thickness of the pixel electrode 12 is, for example, about 100 nm to 500 nm.
  • a pixel separation portion 24 is formed in the pixel boundary portion of the same layer as the pixel electrode 12, and the pixel electrode 12 is electrically separated for each pixel Px. Although illustration is omitted, when the pixel array region 1 is viewed from above, the pixel separation section 24 is formed in a grid pattern and arranged so as to surround the rectangular pixel region. This makes it possible to read the signal charges generated in the photoelectric conversion layer 13 on a pixel-by-pixel basis.
  • the pixel separation section 24 can be formed of, for example, a metal film such as titanium (Ti), tungsten (W), or titanium nitride (TiN), or an oxide film such as silicon oxide (SiO 2 ).
  • the photoelectric conversion layer 13 is a layer that absorbs light of a predetermined wavelength to generate signal charges, and is made of a compound semiconductor material such as a III-V group semiconductor, for example. This photoelectric conversion layer 13 is provided on the entire surface of the pixel array region 1 in common to all the pixels Px, as shown in FIG.
  • Compound semiconductor materials constituting the photoelectric conversion layer 13 include, for example, InGaAs (indium gallium arsenide), InAsSb (indium arsenide antimony), InAs (indium arsenide), InSb (indium antimony), PbS (lead sulfide), PbSe ( lead selenide), GeAu (germanium gold) and HgCdTe (mercury cadmium telluride).
  • the photoelectric conversion layer 13 may be made of Ge (germanium).
  • photoelectric conversion of light with wavelengths from the visible region to the short infrared region is performed.
  • the thickness of the photoelectric conversion layer 13 is, for example, about 3000 nm to 10000 nm.
  • the barrier layer 14 is a semiconductor layer that is connected to the upper electrode 15 on the light incident surface side and arranged to prevent backflow of signal charges generated in the photoelectric conversion layer 13.
  • the barrier layer 14 is common to all the pixels Px. , are provided over the entire surface of the pixel array region 1 .
  • the barrier layer 14 is provided between the photoelectric conversion layer 13 and the upper electrode 15 and is in contact with them.
  • the barrier layer 14 is a region where electric charges discharged from the upper electrode 15 move, and is made of, for example, a compound semiconductor containing N-type impurities. For example, when holes are read from the pixel electrode 12 as signal charges, electrons move to the barrier layer 14 .
  • N-type InP indium phosphide
  • the thickness of the barrier layer 14 can be, for example, about 10 nm to 400 nm, preferably 100 nm or less.
  • An upper electrode 15 is provided on the upper side of the barrier layer 14 (light incident surface side) as an electrode common to each pixel Px, for example.
  • the upper electrode 15 is the upper electrode (second electrode) of the two electrodes sandwiching the photoelectric conversion layer 13 from above and below.
  • the upper electrode 15 discharges the charge that is not used as the signal charge among the charges generated in the photoelectric conversion layer 13 (cathode). For example, when holes are read from the pixel electrode 12 as signal charges, electrons can be discharged through the upper electrode 15 .
  • a predetermined bias voltage Va for example, is applied to the upper electrode 15 .
  • the upper electrode 15 is composed of a conductive film capable of transmitting incident light such as infrared rays, and can be made of, for example, ITO (Indium Tin Oxide) or ITiO (In 2 O 3 —TiO 2 ).
  • a passivation film 16 is formed on the upper side of the upper electrode 15 .
  • Materials for the passivation film 16 include, for example, silicon nitride (SiN), hafnium oxide (HfO 2 ), aluminum oxide (Al 2 O 3 ), zirconium oxide (ZrO 2 ), tantalum oxide (Ta 2 Ta 5 ), and titanium oxide. (TiO 2 ) or the like can be used.
  • the passivation film 16 also functions as an antireflection film.
  • a contact electrode 17 and a passivation film 18 are formed in the same layer on the circuit board 30 side of the semiconductor layer 11 .
  • the contact electrode 17 is connected to at least the high-concentration region 21 of the pixel electrode 12 on the upper surface on the semiconductor layer 11 side, and is connected to the pad electrode 19 on the lower surface on the circuit board 30 side.
  • the passivation film 18 is made of silicon nitride (SiN), hafnium oxide (HfO 2 ), aluminum oxide (Al 2 O 3 ), zirconium oxide (ZrO 2 ), tantalum oxide (Ta 2 Ta 5 ), similar to the passivation film 16 described above. ), titanium oxide (TiO 2 ), or the like.
  • the pad electrode 19 is made of copper (Cu), for example, in the interlayer insulating film 20 .
  • the pad electrodes 19 are electrically connected to the pad electrodes 32 of the circuit board 30 by metal bonding such as Cu--Cu bonding.
  • the interlayer insulating film 20 is also connected to the interlayer insulating film 34 on the circuit board 30 side by oxide film bonding in a planar region other than the CuCu bonding region.
  • the contact electrode 17 is made of, for example, titanium (Ti), tungsten (W), titanium nitride (TiN), platinum (Pt), gold (Au), germanium (Ge), palladium (Pd), zinc (Zn), nickel ( Ni) and aluminum (Al), or an alloy containing at least one of them.
  • the contact electrode 17 may be a single film of such constituent materials, or may be a laminated film in which two or more kinds are combined.
  • the contact electrode 17 is composed of a laminated film of titanium and tungsten.
  • the interlayer insulating film 20 is made of, for example, an inorganic insulating material.
  • inorganic insulating materials that can be used include silicon nitride (SiN), aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ) and hafnium oxide (HfO 2 ).
  • the circuit board 30 has a semiconductor substrate 31 made of a single crystal material such as single crystal silicon (Si).
  • a semiconductor substrate 31 is formed with a readout circuit for the pixel Px, specifically, a capacitive element, a reset transistor, an amplification transistor, a selection transistor, and the like. Details of the pixel circuit will be described later with reference to FIG. A part of the readout circuit for the pixel Px may be formed on the element substrate 10 side.
  • a pad electrode 32 and a contact electrode 33 for electrically connecting the pad electrode 32 and the semiconductor substrate 31 are formed on the semiconductor substrate 31 on the device substrate 10 side. Layers other than the electrodes 32 are filled with an interlayer insulating film 34 .
  • the interlayer insulating film 34 is made of, for example, an inorganic insulating material.
  • inorganic insulating materials that can be used include silicon nitride (SiN), aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ) and hafnium oxide (HfO 2 ).
  • the pixel Px for example, when light with wavelengths in the visible region and the infrared region is incident on the photoelectric conversion layer 13 via the passivation film 16 and the upper electrode 15, the light is photoelectrically converted in the photoelectric conversion layer 13. .
  • a predetermined voltage is applied to the contact electrode 17
  • a potential gradient is generated in the photoelectric conversion layer 13
  • one of the pairs of holes and electrons generated by photoelectric conversion moves to the pixel electrode 12 as a signal charge and is collected from the pixel electrode 12 to the contact electrode 17 .
  • This signal charge moves to the pixel circuit of the semiconductor substrate 31 through the pad electrodes 19 and 32 and is read out for each pixel Px.
  • Each pixel Px of the pixel array region 1 having the above pixel structure outputs a signal obtained by receiving light with wavelengths in the visible region and the short infrared region, for example.
  • the P-type impurity concentration of the pixel electrode 12 formed separately for each pixel is formed so as to gradually decrease from the contact electrode 17 side toward the photoelectric conversion layer 13 side. It is As a result, as shown in the potential diagram of FIG. 2, the electric field of the pixel electrode 12 is gently formed, so that the dark current can be suppressed. In other words, when the P-type diffusion region of the pixel electrode 12 is uniformly formed with a high impurity concentration, a strong electric field is generated, which causes deterioration of dark current. Current can be prevented.
  • the pixel electrode 12 is electrically isolated for each pixel Px by arranging the pixel isolation portion 24 at the pixel boundary in the same layer as the pixel electrode 12 . Thereby, the electrical characteristics of each pixel Px can be separated, and the pixel separability can be improved.
  • the P-type impurity of the pixel electrode 12 is diffused not only in the depth direction (the vertical direction in the drawing) of the element substrate 10 but also in the horizontal direction.
  • a pixel separation plane that is part of the pixel separation section 24 and spreads in the plane direction is formed. Portions 24A are patterned around pixel boundaries.
  • the material of the pixel separation plane portion 24A is, for example, an oxide film of silicon oxide (SiO 2 ), but may also be a metal film such as titanium (Ti) or tungsten (W).
  • a compound semiconductor layer 51 is formed by crystal growth on the upper surface of the pixel separation plane portion 24A and the upper surface of the photoelectric conversion layer 13 where the pixel separation plane portion 24A is not patterned. be done.
  • the material of the compound semiconductor layer 51 can be the same compound semiconductor material as that of the photoelectric conversion layer 13, such as InGaAs (indium gallium arsenide). Formation of the compound semiconductor layer 51 can be achieved by using, for example, a combination of metalorganic vapor phase epitaxy (MOVPE) and micro-area selective epitaxy (MCE).
  • MOVPE metalorganic vapor phase epitaxy
  • MCE micro-area selective epitaxy
  • a compound semiconductor layer 52 having a larger bandgap than the compound semiconductor material of the photoelectric conversion layer 13 is formed on the upper surface of the compound semiconductor layer 51 by crystal growth.
  • N-type InP indium phosphide
  • the material of the compound semiconductor layer 52 can be used as the material of the compound semiconductor layer 52 .
  • trenches 53 are formed by opening the pixel boundary portions of the compound semiconductor layers 51 and 52 until the pixel isolation plane portions 24A are exposed.
  • a pixel separation wall 24B separating the compound semiconductor layers 51 and 52 of each pixel Px is formed.
  • a pixel separation section 24 is constituted by the pixel separation wall 24B and the previously formed pixel separation plane section 24A.
  • a passivation film 18 is formed in a region other than the region where the contact electrode 17 (FIG. 1) is to be formed, and a mask 54 made of an oxide film or the like is formed on the upper surface of the passivation film 18. It is formed. Then, the compound semiconductor layers 51 and 52 are doped with P-type impurities such as Zn (zinc) through the opening regions of the mask 54 by thermal diffusion. As a result, the pixel electrode 12 is formed in the pixel region inside the pixel separation portion 24 in the plane direction.
  • P-type impurities such as Zn (zinc)
  • the high-concentration region 21, the medium-concentration region 22, and the low-concentration region 23 are formed from the side closer to the opening region of the mask 54.
  • FIG. Thereby, the semiconductor layer 11 including the pixel electrode 12, the photoelectric conversion layer 13, and the barrier layer 14 is completed.
  • F in FIG. 3 corresponds to the state in which FIG. 1 is reversed.
  • the semiconductor layer 11 of the element substrate 10 can be formed in the manner described above, and the impurity concentration of the pixel electrode 12 is formed so as to decrease stepwise from the contact electrode 17 toward the photoelectric conversion layer 13 .
  • the P-type impurity is diffused thickly in the depth direction by thermal diffusion, the P-type impurity is diffused widely in the lateral direction. prevented. That is, by arranging the pixel separating portion 24 at the pixel boundary, it is possible to prevent excessive diffusion in the horizontal direction and prevent leaks with adjacent pixels.
  • the pixel separation portion 24 by forming the pixel separation portion 24 with a substantially T-shaped cross-sectional structure composed of the pixel separation plane portion 24A and the pixel separation wall 24B, the low-concentration region 23 in the region opened by the pixel separation plane portion 24A is formed.
  • the uniformity of the impurity concentration is improved, and the flatness of the surface of the pixel electrode 12 in contact with the photoelectric conversion layer 13 is improved. As a result, variations in dark current characteristics can be reduced.
  • FIG. 4 is a cross-sectional view of a second embodiment of a pixel array region according to the present disclosure.
  • the pixel array region 1 of the second embodiment shown in FIG. 4 is different in that pixels Px and pixels Py are alternately arranged in the horizontal direction and the vertical direction, and is common in other respects.
  • the pixel array region 1 of the second embodiment is configured by arranging pixels Px and pixels Py in a checkered pattern.
  • the pixel Px has the same configuration as in the first embodiment.
  • the pixel Px reads signal charges (for example, holes) generated in the photoelectric conversion layer 13 and collected to the contact electrode 17 via the pixel electrode 12, and outputs them as pixel signals.
  • the pixel Py discharges signal charges (for example, holes) generated in the photoelectric conversion layer 13 and collected to the contact electrode 17 via the pixel electrode 12 as unnecessary charges without outputting them as pixel signals. Drain pixels.
  • the pixel separating portion 24 is formed larger in the planar direction, and as a result, the planar area of the pixel electrode 12 is larger than that of the pixel electrode 12 of the pixel Px. is also smaller. In other words, the pixel electrode 12 and the pixel separating portion 24 are formed in different areas in the plane direction between the pixel Px and the pixel Py.
  • the pixel separation section 24 is provided as in the first embodiment, and the impurity concentration of the pixel electrode 12 is set at the contact electrode 17 side. It is formed so that the thickness gradually decreases from the top toward the photoelectric conversion layer 13 side. As a result, the electric field of the pixel electrode 12 is gradually formed in the depth direction of the substrate, so that dark current can be suppressed.
  • the pixel separation section 24 improves the separation of pixels. Furthermore, in the second embodiment, crosstalk can be reduced by alternately arranging pixels Py, which are drain pixels that do not output pixel signals, and pixels Px, which are normal pixels that output pixel signals.
  • the pixel array region 1 of the second embodiment can be manufactured by a method similar to that of the first embodiment described with reference to FIG.
  • the pixel isolation portion 24 since the pixel isolation portion 24 is provided, the lateral diffusion of the P-type impurity can be prevented by the pixel isolation portion 24, so that the P-type impurity There is no need to care about the difference in the degree of diffusion of impurities in the lateral direction, and the process can be performed in a single process (diffusion process). That is, according to the pixel array region 1 of the second embodiment, the steps can be reduced and the diffusion controllability in the process is improved.
  • the pixel separation portion 24 is formed with a substantially T-shaped cross-sectional structure including the pixel separation plane portion 24A and the pixel separation wall 24B.
  • the pixel separation plane portion 24A extending in the plane direction may be omitted, and the pixel separation portion 24 may be formed only by the pixel separation wall 24B in the depth direction (vertical direction).
  • the depth (height) of the pixel separation wall 24B is the same as or deeper than the depth of the pixel electrode 12 .
  • the pixel electrode 12 of each pixel (pixel Px or pixel Py) can be separated, so that the above-described effect can be obtained.
  • the passivation film 16 is formed on the upper side of the upper electrode 15, which is the light incident surface side.
  • a color filter layer that transmits this light (wavelength light) may be arranged in a predetermined arrangement such as a Bayer arrangement.
  • an on-chip lens may be formed on the upper surface of the passivation film 16 or the color filter layer.
  • FIG. 5 shows a schematic configuration of a solid-state imaging device to which the technique of the present disclosure is applied.
  • the solid-state imaging device 100 in FIG. 5 is configured with a pixel array region 103 having a plurality of pixels 102 and a peripheral circuit region therearound.
  • the peripheral circuit area includes a vertical drive circuit 104, a column signal processing circuit 105, a horizontal drive circuit 106, an output circuit 107, a control circuit 108, and the like.
  • the configuration of the pixel array region 103 in which a plurality of pixels 102 are two-dimensionally arranged in a matrix the configuration of the pixel array region 1 according to the first embodiment shown in FIG. 1 and the configuration of the second embodiment shown in FIG.
  • the configuration of the pixel array region 1 according to is adopted.
  • the pixel array region 103 has the pixels Px in FIG.
  • the pixel array region 103 has the pixels Px and the pixels Py of FIG. 4 alternately arranged in the horizontal direction and the vertical direction.
  • a pixel 102 is provided. A specific circuit configuration of the pixel 102 will be described later with reference to FIG.
  • the control circuit 108 receives an input clock and data instructing the operation mode, etc., and outputs data such as internal information of the solid-state imaging device 100 . That is, the control circuit 108 generates clock signals and control signals that serve as references for the operations of the vertical drive circuit 104, the column signal processing circuit 105, the horizontal drive circuit 106, and the like, based on the vertical synchronization signal, horizontal synchronization signal, and master clock. do. The control circuit 108 outputs the generated clock signal and control signal to the vertical drive circuit 104, the column signal processing circuit 105, the horizontal drive circuit 106, and the like.
  • the vertical drive circuit 104 is composed of, for example, a shift register, selects a predetermined pixel drive wiring 110, supplies a pulse for driving the pixels 102 to the selected pixel drive wiring 110, and drives the pixels 102 row by row. do. That is, the vertical driving circuit 104 sequentially selectively scans each pixel 102 in the pixel array region 103 in the vertical direction row by row, and generates a pixel signal based on the signal charge generated by the photoelectric conversion unit of each pixel 102 according to the amount of light received. is supplied to the column signal processing circuit 105 through the vertical signal line 109 .
  • the column signal processing circuit 105 is arranged for each column of the pixels 102, and performs signal processing such as noise removal on the signals output from the pixels 102 of one row for each column.
  • the column signal processing circuit 105 performs signal processing such as CDS (Correlated Double Sampling) for removing pixel-specific fixed pattern noise and AD conversion.
  • the horizontal driving circuit 106 is composed of, for example, a shift register, and sequentially outputs horizontal scanning pulses to select each of the column signal processing circuits 105 in turn, and outputs pixel signals from each of the column signal processing circuits 105 to the horizontal signal line. 111 to output.
  • the output circuit 107 performs signal processing on signals sequentially supplied from each of the column signal processing circuits 105 through the horizontal signal line 111 and outputs the processed signals.
  • the output circuit 107 may perform only buffering, or may perform black level adjustment, column variation correction, various digital signal processing, and the like.
  • the input/output terminal 113 exchanges signals with the outside.
  • the solid-state imaging device 100 configured as described above is a CMOS image sensor called a column AD system in which column signal processing circuits 105 that perform CDS processing and AD conversion processing are arranged for each column. Further, the solid-state imaging device 100 having the configuration of the pixel array region 1 described above as the pixel array region 103 is, for example, a CMOS image sensor that outputs a captured image obtained by receiving light with wavelengths in the visible region and the short infrared region. sensor.
  • the solid-state imaging device 100 that employs the configuration of the pixel array region 1 described above can suppress dark current in each pixel 102 and can generate a high-quality captured image.
  • FIG. 6 shows a pixel circuit of each pixel 102 of the solid-state imaging device 100.
  • Each pixel 102 has a photoelectric conversion unit 121 , a capacitive element 122 , a reset transistor 123 , an amplification transistor 124 and a selection transistor 125 .
  • the photoelectric conversion unit 121 is made of a semiconductor thin film using a compound semiconductor such as InGaAs, and generates charges (signal charges) according to the amount of light received.
  • a predetermined bias voltage Va is applied to the photoelectric conversion unit 121 .
  • the photoelectric conversion section 121 corresponds to the photoelectric conversion layer 13 in FIG. 1, for example.
  • the photoelectric conversion unit 121 is formed, for example, on the element substrate 10 in FIG. 1, and the capacitive element 122, reset transistor 123, amplification transistor 124, and selection transistor 125 are formed on the circuit substrate 30 in FIG.
  • Capacitive element 122 accumulates charges generated by the photoelectric conversion unit 121 .
  • Capacitive element 122 can be configured to include at least one of PN junction capacitance, MOS capacitance, and wiring capacitance, for example.
  • the reset transistor 123 When the reset transistor 123 is turned on by the reset signal RST, the charge accumulated in the capacitor 122 is discharged to the source (ground), thereby resetting the potential of the capacitor 122 .
  • the amplification transistor 124 outputs a pixel signal corresponding to the accumulated potential of the capacitive element 122 . That is, the amplification transistor 124 constitutes a source follower circuit together with a load MOS (not shown) as a constant current source connected via the vertical signal line 109, and the level corresponding to the charge accumulated in the capacitive element 122 is increased. is output from the amplification transistor 124 to the column signal processing circuit 105 via the selection transistor 125 .
  • the selection transistor 125 is turned on when the pixel 102 is selected by the selection signal SEL, and outputs the pixel signal of the pixel 102 to the column signal processing circuit 105 via the vertical signal line 109 .
  • Each signal line through which the selection signal SEL and the reset signal RST are transmitted corresponds to the pixel drive wiring 110 in FIG.
  • the technology of the present disclosure is not limited to application to solid-state imaging devices. That is, the present technology can be applied to an image capture unit (photoelectric conversion unit) such as an imaging device such as a digital still camera or a video camera, a mobile terminal device having an imaging function, or a copying machine using a solid-state imaging device as an image reading unit. It is applicable to general electronic equipment using a solid-state imaging device.
  • the solid-state imaging device may be formed as a single chip, or may be in the form of a module having an imaging function in which an imaging section and a signal processing section or an optical system are packaged together.
  • FIG. 7 is a block diagram showing a configuration example of an imaging device as an electronic device to which this technology is applied.
  • An imaging apparatus 200 in FIG. 7 includes an optical unit 201 including a lens group, a solid-state imaging device (imaging device) 202 adopting the configuration of the solid-state imaging device 100 in FIG. Processor) circuit 203 .
  • the imaging device 200 also includes a frame memory 204 , a display section 205 , a recording section 206 , an operation section 207 and a power supply section 208 .
  • DSP circuit 203 , frame memory 204 , display unit 205 , recording unit 206 , operation unit 207 and power supply unit 208 are interconnected via bus line 209 .
  • the optical unit 201 captures incident light (image light) from a subject and forms an image on the imaging surface of the solid-state imaging device 202 .
  • the solid-state imaging device 202 converts the amount of incident light imaged on the imaging surface by the optical unit 201 into an electric signal on a pixel-by-pixel basis, and outputs the electric signal as a pixel signal.
  • the solid-state imaging device 202 it is possible to use the solid-state imaging device 100 of FIG. 5, that is, the solid-state imaging device having the configuration of the pixel array region 1 of FIG. 1 or 4 as the pixel array region 103 and suppressing the dark current. can.
  • the display unit 205 is, for example, a panel type display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel, and displays moving images or still images captured by the solid-state imaging device 202 .
  • a recording unit 206 records a moving image or still image captured by the solid-state imaging device 202 in a recording medium such as a hard disk or a semiconductor memory.
  • the operation unit 207 issues operation commands for various functions of the imaging device 200 under the user's operation.
  • the power supply unit 208 appropriately supplies various power supplies as operating power supplies for the DSP circuit 203, the frame memory 204, the display unit 205, the recording unit 206, and the operation unit 207 to these supply targets.
  • the solid-state imaging device 100 having the structure of the pixel array region 1 described above as the solid-state imaging device 202 for example, dark current can be suppressed and image quality deterioration can be suppressed. Also, it is possible to improve the S/N ratio and achieve a high dynamic range. Therefore, even in the imaging device 200 such as a video camera, a digital still camera, and a camera module for a mobile device such as a mobile phone, it is possible to improve the image quality of the captured image.
  • FIG. 8 is a diagram showing a usage example of an image sensor using the solid-state imaging device 100 described above.
  • An image sensor using the solid-state imaging device 100 described above can be used, for example, in various cases for sensing light such as visible light, infrared light, ultraviolet light, and X-rays as follows.
  • ⁇ Devices that capture images for viewing purposes, such as digital cameras and mobile devices with camera functions.
  • Devices used for transportation such as in-vehicle sensors that capture images behind, around, and inside the vehicle, surveillance cameras that monitor running vehicles and roads, and ranging sensors that measure the distance between vehicles.
  • Devices used in home appliances such as TVs, refrigerators, air conditioners, etc., to take pictures and operate devices according to gestures ⁇ Endoscopes, devices that perform angiography by receiving infrared light, etc.
  • Equipment used for medical and healthcare purposes such as surveillance cameras for crime prevention and cameras for personal authentication
  • microscopes used for beauty such as microscopes used for beauty
  • Sports such as action cameras and wearable cameras for use in sports ⁇ Cameras, etc. for monitoring the condition of fields and crops , agricultural equipment
  • the technology (the present technology) according to the present disclosure can be applied to various products.
  • the technology according to the present disclosure can be realized as a device mounted on any type of moving body such as automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility, airplanes, drones, ships, and robots. may
  • FIG. 9 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the technology according to the present disclosure can be applied.
  • a vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001.
  • the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an exterior information detection unit 12030, an interior information detection unit 12040, and an integrated control unit 12050.
  • a microcomputer 12051, an audio/image output unit 12052, and an in-vehicle network I/F (interface) 12053 are illustrated.
  • the drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various programs.
  • the driving system control unit 12010 includes a driving force generator for generating driving force of the vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to the wheels, and a steering angle of the vehicle. It functions as a control device such as a steering mechanism to adjust and a brake device to generate braking force of the vehicle.
  • the body system control unit 12020 controls the operation of various devices equipped on the vehicle body according to various programs.
  • the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as headlamps, back lamps, brake lamps, winkers or fog lamps.
  • the body system control unit 12020 can receive radio waves transmitted from a portable device that substitutes for a key or signals from various switches.
  • the body system control unit 12020 receives the input of these radio waves or signals and controls the door lock device, power window device, lamps, etc. of the vehicle.
  • the vehicle exterior information detection unit 12030 detects information outside the vehicle in which the vehicle control system 12000 is installed.
  • the vehicle exterior information detection unit 12030 is connected with an imaging section 12031 .
  • the vehicle exterior information detection unit 12030 causes the imaging unit 12031 to capture an image of the exterior of the vehicle, and receives the captured image.
  • the vehicle exterior information detection unit 12030 may perform object detection processing or distance detection processing such as people, vehicles, obstacles, signs, or characters on the road surface based on the received image.
  • the imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of received light.
  • the imaging unit 12031 can output the electric signal as an image, and can also output it as distance measurement information.
  • the light received by the imaging unit 12031 may be visible light or non-visible light such as infrared rays.
  • the in-vehicle information detection unit 12040 detects in-vehicle information.
  • the in-vehicle information detection unit 12040 is connected to, for example, a driver state detection section 12041 that detects the state of the driver.
  • the driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 detects the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated, or it may be determined whether the driver is dozing off.
  • the microcomputer 12051 calculates control target values for the driving force generator, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, and controls the drive system control unit.
  • a control command can be output to 12010 .
  • the microcomputer 12051 realizes the functions of ADAS (Advanced Driver Assistance System) including collision avoidance or shock mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, or vehicle lane deviation warning. Cooperative control can be performed for the purpose of ADAS (Advanced Driver Assistance System) including collision avoidance or shock mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, or vehicle lane deviation warning. Cooperative control can be performed for the purpose of ADAS (Advanced Driver Assistance System) including collision avoidance or shock mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, or vehicle
  • the microcomputer 12051 controls the driving force generator, the steering mechanism, the braking device, etc. based on the information about the vehicle surroundings acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, so that the driver's Cooperative control can be performed for the purpose of autonomous driving, etc., in which vehicles autonomously travel without depending on operation.
  • the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the information detection unit 12030 outside the vehicle.
  • the microcomputer 12051 controls the headlamps according to the position of the preceding vehicle or the oncoming vehicle detected by the vehicle exterior information detection unit 12030, and performs cooperative control aimed at anti-glare such as switching from high beam to low beam. It can be carried out.
  • the audio/image output unit 12052 transmits at least one of audio and/or image output signals to an output device capable of visually or audibly notifying the passengers of the vehicle or the outside of the vehicle.
  • an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are illustrated as output devices.
  • the display unit 12062 may include at least one of an on-board display and a head-up display, for example.
  • FIG. 10 is a diagram showing an example of the installation position of the imaging unit 12031.
  • the vehicle 12100 has imaging units 12101, 12102, 12103, 12104, and 12105 as the imaging unit 12031.
  • the imaging units 12101, 12102, 12103, 12104, and 12105 are provided at positions such as the front nose of the vehicle 12100, the side mirrors, the rear bumper, the back door, and the upper part of the windshield in the vehicle interior, for example.
  • An image pickup unit 12101 provided in the front nose and an image pickup unit 12105 provided above the windshield in the passenger compartment mainly acquire images in front of the vehicle 12100 .
  • Imaging units 12102 and 12103 provided in the side mirrors mainly acquire side images of the vehicle 12100 .
  • An imaging unit 12104 provided in the rear bumper or back door mainly acquires an image behind the vehicle 12100 .
  • Forward images acquired by the imaging units 12101 and 12105 are mainly used for detecting preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, and the like.
  • FIG. 10 shows an example of the imaging range of the imaging units 12101 to 12104.
  • the imaging range 12111 indicates the imaging range of the imaging unit 12101 provided in the front nose
  • the imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided in the side mirrors, respectively
  • the imaging range 12114 The imaging range of an imaging unit 12104 provided on the rear bumper or back door is shown. For example, by superimposing the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 viewed from above can be obtained.
  • At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information.
  • at least one of the imaging units 12101 to 12104 may be a stereo camera composed of a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.
  • the microcomputer 12051 determines the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and changes in this distance over time (relative velocity with respect to the vehicle 12100). , it is possible to extract, as the preceding vehicle, the closest three-dimensional object on the traveling path of the vehicle 12100, which runs at a predetermined speed (for example, 0 km/h or more) in substantially the same direction as the vehicle 12100. can. Furthermore, the microcomputer 12051 can set the inter-vehicle distance to be secured in advance in front of the preceding vehicle, and can perform automatic braking control (including following stop control) and automatic acceleration control (including following start control). In this way, cooperative control can be performed for the purpose of automatic driving in which the vehicle autonomously travels without depending on the operation of the driver.
  • automatic braking control including following stop control
  • automatic acceleration control including following start control
  • the microcomputer 12051 converts three-dimensional object data related to three-dimensional objects to other three-dimensional objects such as motorcycles, ordinary vehicles, large vehicles, pedestrians, and utility poles. It can be classified and extracted and used for automatic avoidance of obstacles. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into those that are visible to the driver of the vehicle 12100 and those that are difficult to see. Then, the microcomputer 12051 judges the collision risk indicating the degree of danger of collision with each obstacle, and when the collision risk is equal to or higher than the set value and there is a possibility of collision, an audio speaker 12061 and a display unit 12062 are displayed. By outputting an alarm to the driver via the drive system control unit 12010 and performing forced deceleration and avoidance steering via the drive system control unit 12010, driving support for collision avoidance can be performed.
  • At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays.
  • the microcomputer 12051 can recognize a pedestrian by determining whether or not the pedestrian exists in the captured images of the imaging units 12101 to 12104 .
  • recognition of a pedestrian is performed by, for example, a procedure for extracting feature points in images captured by the imaging units 12101 to 12104 as infrared cameras, and performing pattern matching processing on a series of feature points indicating the outline of an object to determine whether or not the pedestrian is a pedestrian.
  • the audio image output unit 12052 outputs a rectangular outline for emphasis to the recognized pedestrian. is superimposed on the display unit 12062 . Also, the audio/image output unit 12052 may control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.
  • the technology according to the present disclosure can be applied to the imaging unit 12031 among the configurations described above.
  • an image sensor for example, the solid-state imaging device 100
  • the technology according to the present disclosure can be applied to the imaging unit 12031.
  • the technology according to the present disclosure is not limited to application to a solid-state imaging device that detects the distribution of the incident light amount of light with a wavelength in the visible region or the short infrared region and captures an image.
  • a solid-state imaging device that captures the distribution of the amount of incident light as an image, or in a broader sense, a solid-state imaging device such as a fingerprint detection sensor that detects the distribution of other physical quantities such as pressure and capacitance and captures the image as an image ( Physical quantity distribution detection device) can be applied to the whole.
  • the technology according to the present disclosure can also be applied to a solid-state imaging device that uses electrons as signal charges. can.
  • the conductivity types of the semiconductor layer 11, the semiconductor substrate 31, etc. are reversed, or the polarity of the applied bias voltage is reversed.
  • the technique of this disclosure can take the following configurations.
  • a photoelectric conversion layer containing a compound semiconductor a pixel electrode for extracting the charge generated in the photoelectric conversion layer for each pixel;
  • a solid-state imaging device comprising: a pixel separation section arranged between the pixel electrodes of each pixel.
  • the pixel electrode has an impurity concentration gradually reduced toward the photoelectric conversion layer.
  • the pixel separation section has a substantially T-shaped cross-sectional structure including a separation wall separating the pixel electrodes of each pixel and a planar section extending in a plane direction. .
  • a method for manufacturing a solid-state imaging device comprising: forming a pixel electrode for extracting electric charges generated in the photoelectric conversion layer for each pixel in a pixel region inside the pixel separation portion in a plane direction. (11) a photoelectric conversion layer containing a compound semiconductor; a pixel electrode for extracting the charge generated in the photoelectric conversion layer for each pixel; An electronic device, comprising: a solid-state image pickup device having a pixel separating portion disposed between the pixel electrodes of each pixel.

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