WO2022268870A2 - Dispositif de projection optique recouvert hermétiquement et procédé de production correspondant - Google Patents

Dispositif de projection optique recouvert hermétiquement et procédé de production correspondant Download PDF

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Publication number
WO2022268870A2
WO2022268870A2 PCT/EP2022/066987 EP2022066987W WO2022268870A2 WO 2022268870 A2 WO2022268870 A2 WO 2022268870A2 EP 2022066987 W EP2022066987 W EP 2022066987W WO 2022268870 A2 WO2022268870 A2 WO 2022268870A2
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WO
WIPO (PCT)
Prior art keywords
substrate
arrangement
cover
prism
optical projection
Prior art date
Application number
PCT/EP2022/066987
Other languages
German (de)
English (en)
Other versions
WO2022268870A3 (fr
Inventor
Wolfgang Reinert
Vanessa Stenchly
Hans-Joachim Quenzer
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. filed Critical Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority to EP22734955.2A priority Critical patent/EP4359845A2/fr
Publication of WO2022268870A2 publication Critical patent/WO2022268870A2/fr
Publication of WO2022268870A3 publication Critical patent/WO2022268870A3/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/18—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical projection, e.g. combination of mirror and condenser and objective
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00317—Packaging optical devices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10—Scanning systems
    • G02B26/101—Scanning systems with both horizontal and vertical deflecting means, e.g. raster or XY scanners
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/14—Beam splitting or combining systems operating by reflection only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/04—Optical MEMS
    • B81B2201/042—Micromirrors, not used as optical switches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/031—Anodic bondings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H01S5/4093—Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion

Definitions

  • the present invention relates to a hermetically sealed optical projec onsan Aunt such.
  • blue and green charger diodes are finding ever broader fields of application, with blue laser diodes, for example, being widely used and established as components for reading high-density optical storage media (Blu-Ray). Furthermore, various other applications of powerful blue and green laser diodes are emerging, such as RGB light sources in mobile image and video projections and in medical and biological spectroscopy. Both green and blue laser diodes are currently hermetically sealed in special TO headers (TO 38) with an integrated optical window and a copper heat sink, i.e. packed or encapsulated in a housing).
  • TO 38 special TO headers
  • the problem underlying the present invention is therefore to provide a ver improved optical projection arrangement, which also when using a more number of optoelectronic transmission components such.
  • the present invention is also based on the object of creating a corresponding production method for such improved optical projection arrangements.
  • An optical projection arrangement comprises a first assembly, which is arranged on a gas-tight first sub-substrate, and a second assembly, which is arranged on a second sub-substrate.
  • the first assembly comprises an optoelectronic component arranged on the first partial substrate, at least part of the transmission radiation of the optoelectronic component having a main emission direction in a range of ⁇ 30° to a vertical of the first partial substrate, a gas-tight cover element which is connected to the first partial substrate is hermetically joined in order to provide a hermetically sealed housing for the optoelectronic component, the cover element having a material that is transparent to the transmitted radiation, at least in the area of the main emission direction, a lens arrangement, which is fixed with respect to the cover element, for collimating the transmitted radiation of the optoelectronic component, and a prism arrangement which is designed to guide the collimated transmission radiation of the optoelectronic component and decouple it at a decoupling surface.
  • the second assembly comprises a MEMS mirror arrangement with a movably suspended and deflectable MEMS-based mirror element, the prism arrangement and the MEMS mirror arrangement being arranged geometrically in relation to one another in such a way that the emitted transmission radiation hits the movably suspended MEMS element at an angle of incidence ⁇ . meets based mirror element, wherein the angle of incidence ß in the rest state of the MEMS-based mirror element is in a range between 30 ° and 50 °.
  • a method for producing an optical projection arrangement comprises the following steps:
  • Arranging a second assembly on a second sub-substrate with arranging a MEMS mirror array with a movably suspended and deflectable MEMS-based mirror element on the second sub-substrate, wherein the prism array and the MEMS mirror array are arranged geometrically to each other that the coupled from Transmission radiation strikes the movably suspended MEMS-based mirror element at a second angle ⁇ , the angle ⁇ being in a range between 30° and 50° when the MEMS-based mirror element is at rest.
  • the inventive realization of the optical projection arrangement, z. B. as a compact RGB scanner, for example, enables full-color projection of data and images in AR/VR glasses and other applications.
  • the service life of the semiconductor light sources used in particular with wavelengths of less than 500 nm, can be designed to be extremely long-lasting due to the independence from the ambient atmosphere, since a hermetic and organic-free housing seal can ensure a desired, specified, chemical composition of the working atmosphere of the semiconductor light sources, once it has been set.
  • the concept according to the invention allows the entire optical projection arrangement (RGB scanner arrangement) to be geometrically compacted with an integrated MEMS mirror arrangement in a hermetically sealed optical housing while avoiding organic joining materials and introducing a defined working atmosphere.
  • the housed radiation-emitting components of the optical projection arrangement have a long service life with consistently good beam and performance quality.
  • damage to the beam exit areas from the semiconductor light sources can be reduced or completely prevented, which can otherwise occur as a result of the effects of water vapor and volatile organic components and the effect of the extremely intensive and high-energy laser radiation.
  • a compact component size of the optical projection arrangement can be achieved, in particular in connection with a MEMS mirror scanner arrangement additionally integrated in the optical projection arrangement, with parasitic impedances of the electrical connections being reduced and the heat dissipation from the housing being extremely effective.
  • the optical projection arrangement according to the invention is designed, for example, as a first and second subassembly, which are arranged on part substrates (sub strate sections) that are firmly coupled to one another or on a common carrier substrate, with the optical projection arrangement as a photonic arrangement having or specifying an optical central axis, the center point of which is aligned with the moveable MEMS mirror plate of the MEMS mirror element.
  • the optical projection arrangement has For example, one or a plurality of semiconductor-based light sources, which are arranged on a gas-tight, first partial substrate, and with a gas-tight cover element, on which a lens arrangement is also arranged, is housed hermetically tight, and also a prism arrangement (with deflection and beam combination functionality).
  • the at least one hermetically housed semiconductor-based light source has a light exit direction pointing away from the carrier substrate (e.g. vertically), the lens arrangement arranged on the gas-tight cover element being designed for collimating the divergent radiation of the at least one optoelectronic light source.
  • the MEMS mirror arrangement can be surrounded by a dome-like glass cap, for example.
  • This structural arrangement of the individual elements of the optical projection arrangement with the at least one optoelectronic transmission component, the lens arrangement, the prism arrangement and the MEMS mirror arrangement and their geometric alignment with one another allows an extremely compact structure with a small installation volume of the optical projection arrangement to be obtained , wherein due to the hermetic (gas-tight) encapsulation of the at least one optoelectronic transmitting component with the accommodation in a defined working atmosphere set, a long service life of the at least one optoelectronic component and thus the optical projection system can be achieved.
  • the gas-tight, hermetic encapsulation of the at least one optoelectronic transmission component in the gas-tight cover element with the it arranged lens array can be obtained by, for example, a planar optically transmissive cover (cover member) for an improved, packaged, radiation-emitting device can be produced at the wafer level.
  • a method of manufacturing a cap substrate includes the steps of: providing a mold substrate having a structured surface area with a recess and a cap substrate having a glass material; Bonding the cover substrate to the mold substrate to form a sealed cavity between the cover substrate and the mold substrate by means of the recess; annealing the cap substrate and the mold substrate to reduce the viscosity of the cap substrate glass material and providing a positive pressure in the sealed cavity relative to the surrounding atmosphere to based on the reduced viscosity of the cap substrate glass material and the positive pressure in the sealed cavity relative to the surrounding atmosphere to bring about a defined bulging of the glass material of the cover substrate, starting from the closed cavity up to a stop surface spaced apart from the cover substrate, in order to obtain a shaped cover substrate with at least one cover element; and removing the stop member and the molded substrate from the molded cover substrate, wherein the molded cover substrate forms the lid substrate with the at least one lid member.
  • another method for producing a cover substrate comprises the following steps: providing a molded substrate having a structured surface area which has depressions and a cover substrate which has a glass material; bonding a second major surface portion of the cap substrate to a first major surface portion of the mold substrate to form cavities sealed between the cap substrate and the mold substrate by the indentations; Annealing the cover substrate and the mold substrate to reduce the viscosity of the glass material of the cover substrate in order to cause the glass material to flow into the depressions based on the reduced viscosity of the glass material of the cover substrate in order to obtain a molded cover substrate with at least one cover element, and removing the molded substrate from the molded cover substrate, wherein the molded cover substrate forms the lid substrate with the at least one lid member.
  • a mold substrate is used to form cover substrates by means of a glass flow process, whereby optically flat window areas with a defined height can be produced in a glass cover substrate.
  • sensitive radiation sources semiconductor light sources
  • the glass flow process allows the production of very smooth glass surfaces with roughnesses in the range of less than 5 nm.
  • Covering elements for housing radiation-sensitive components e.g. B. only a (single) glass material for the production of the (gas-tight) cover element is used. If a mold substrate is used to form cover elements (cover substrates) by glass flow processes, a large number of cover elements (glass caps) can be formed with similarly shaped dimensions, with which sensitive semiconductor light sources can then be hermetically sealed. If required for structural engineering reasons, these shaped glass cover elements can also be isolated and the cover elements can be used for a single cap on populated carrier substrates both on the wafer level and on the individual substrate level.
  • the housed, radiation-emitting optoelectronic components have a long service life with consistently good beam and power quality.
  • clouding of the exit window and damage to the laser facets can be reduced or prevented since exposure to water vapor and volatile organic components from exposure to the extremely intense and high-energy laser radiation can be reduced or prevented.
  • the heat dissipation from the housing can be improved. Furthermore, low manufacturing costs can be achieved.
  • cover substrates for example, a mold substrate for the production of cover substrates by means of anodic sche Bonding can be used, whereby optically flat, height-defined offset window areas can be produced in a glass-silicon cover substrate, with which sensitive radiation sources can then be hermetically sealed on the wafer and/or individual substrate level.
  • cover substrates with the cover elements with similar properties can also be produced by glass frit bonding or metallic joining techniques instead of the anodic bonding specified above.
  • FIG. 1a shows an exemplary embodiment of the optical projection arrangement in a cross-sectional view according to an exemplary embodiment:
  • FIG. 1b shows an exemplary embodiment of the optical projection arrangement in a plan view according to the exemplary embodiment
  • FIG. 9 shows an exemplary flow chart of the method for producing the optical projection arrangement according to an embodiment
  • the description of an element made of a semiconductor material means that the element has a semiconductor material, i.e. is formed at least partially or also completely from the semiconductor material.
  • the description of an element made of a glass material means that the element comprises a glass material, i.e. is formed at least partially or also completely from the glass material.
  • the figures have a Cartesian coordinate system x, y, z, with the directions x, y, z being arranged orthogonally to one another.
  • the term “lateral” means a direction parallel to the x and/or y direction, ie, parallel to the xy plane, where the term “vertical” indicates a direction parallel to the +/-z direction.
  • FIGS. 1a-e A possible configuration or embodiment of an optical projection arrangement 10 according to an exemplary embodiment will now be described below with reference to FIGS. 1a-e by way of example.
  • FIG. 1a shows an exemplary cross-sectional view of the optical projection assembly 10 with the drawing plane parallel to the x-z plane
  • FIG. 1b shows an exemplary top view of the optical projection assembly 10 with the drawing plane parallel to the x-y plane.
  • the optical projection device 10 now includes, for example, a first assembly 10-1, which is arranged on a gas-tight first partial substrate or a gas-tight first substrate section 20-1, and a second assembly 10-2, which is on a second partial substrate or a second Substrate section 20-2 is arranged.
  • transmission component or transmission component such as a laser diode or an LED
  • At least part of the transmission radiation 32-1 of the optoelectronic component 30-1 has an emission direction or main emission direction in a range of +/-30° or +/-20° to a vertical (to the plane) of the first partial substrate 20-1.
  • the transmission arrangement 30 can have one or a plurality of optoelectronic transmission components, with three optoelectronic transmission components 30-1, 30-2, 30-3 being shown in FIG. 1a by way of example, ie the optoelectronic transmission component 30-1 and the "optional" optoelectronic transmission components 30-2, 30-3.
  • At least part of the respective transmission radiation 32-1 of the optoelectronic component 30-1 or part of the respective transmission radiation 32-1, 32-2, 32-3 of the optoelectronic components 30-1, 30-2, 30-3 an emission direction or main emission direction in an angular range of +/- 30° or +/- 20° to a vertical (to the plane) of the gas-tight first partial substrate 20-1.
  • the center axis of the transmission radiation 32-1, 32-2, 32-3 and/or denotes the main axis of an intensity maximum of the transmission radiation 32.
  • the transmission arrangement 30 has, for example, three individual transmission components 30-1, 30-2, 30-3.
  • the transmission arrangement 30 can be embodied, for example, as a multicolor transmission arrangement or RGB transmission arrangement, with a first transmission component 30-1 having a first, e.g. B. red transmission radiation 32-1, a second transmission component 30-2, a second, z. B. green transmission radiation 32-2 and a third transmission component 30-3 a third, z. B. has blue transmission radiation 32-3.
  • the common transmission radiation 32 can thus have an individual transmission radiation or a combination of several or a combination of all individual transmission radiations 32-1, 32-2, 32-3 of the optoelectronic transmission components 30-1, 30-2, 30-3.
  • the number of optoelectronic transmission components 30-1, 30-2, 30-3 for the transmission arrangement 30 is based on the requirements for the respective use of the optical projection arrangement and includes at least one transmission component 30-1.
  • the first assembly 10-1 also has a gas-tight cover element 38 which is hermetically joined or connected to the gas-tight first partial substrate 20-1 in order to form a hermetically tight or gas-tight housing for the (at least one) optoelectronic component 30-1 or provide for the plurality of optoelectronic components 30-1, 30-2, 30-3, wherein the cover element 38 at least in the area of the main emission direction of Transmission radiation 32 or 32-1, 32-2, 32-3 has a material which is transparent to transmission radiation 32, that is to say it is transparent to transmission radiation 32 emitted.
  • the frame structure 44 is not connected to the cover member 38 at any point (i.e., not directly).
  • the gas-tight cover element 38 can also be designed as the lens holder structure for the lens arrangement 40, in which case the frame structure 44 only supports the prism 50 and the lens arrangement 40 with the cover element 38 (or cover substrate) via the lens holder structure (or . Spacer) 42 is indirectly connected.
  • the lens arrangement 40 can thus be arranged or fixed in a defined focal position with respect to the gas-tight cover element 38 by means of the frame structure 44 and the lens holder structure 42 arranged thereon. According to a further exemplary embodiment, the lens arrangement 40 can also be fixed (glued) to the gas-tight cover element 38 in the defined focal position.
  • the (shaped) gas-tight cover element or cover element 38 has a side wall area 38-1 between a base area 38-2 and a top area 38-3, with the top area 38-3 of the cover element 38 being used for the transmission radiation 32 of the at least one optoelectronic component 30 has permeable material, and is provided for coupling out the transmission radiation.
  • the gas-tight first carrier substrate 20-1 has a thermally conductive and, for example, also electrically insulating ceramic material, for example Al2O3, AIN, SI3N4, LTCC, HTCC, etc., with a low coefficient of thermal expansion, or a semiconductive material, such as silicon, for example .is built from it.
  • the optoelectronic components 30 (3-1, 30-2, 30-2).
  • 1, 38 for the at least one optoelectronic component 30 now has, for example, a reactive atmosphere with exclusively inorganic substances and/or is designed to be hermetically sealed against the ingress of water vapor.
  • the lens arrangement 40 can have (at least) one lens element 40-1 or a plurality of lens elements 40-1, 40-2, 40-3, with three lens elements 40-1, 40-2 , 40-3 are shown, that is, the lens element 40-1 and the "optional" lens elements 40-2, 40-3.
  • the lens arrangement 40 thus has one or a plurality of lens elements 40-1, 40-
  • collimation refers to the parallel direction of divergent light beams, with the lens elements 40-1, 40-2, 40-3 of the lens arrangement 40 also being referred to as collimators or converging lenses.
  • the lens arrangement 40 can also be designed as an integrated multiple lens 40, in which case the lens elements 40-1, 40-2, 40-3 are arranged together in the multiple lens 40 in an integrated manner.
  • the lens arrangement 40 can therefore have a plurality of collimating lenses 40-1, 40-2, 40-3 for the optoelectronic transmission arrangement 30 for collimating the, for example, divergent transmission radiation 32-1, 32-2, 32- 3 of the optoelectronic components 30-1, 30-2, 30-3, e.g. each have a collimating lens 40-# for an optoelectronic component 30-#.
  • the lens arrangement 40 can therefore have a collimation lens 40-# for an optoelectronic component 30-#, the collimation lens 40-# being a collimation lens element or a plurality of collimation lens elements arranged (optically) one behind the other ments (as a collimating lens arrangement) to form the respective collimating lens 40-#.
  • the optical projection arrangement 10 further comprises a prism arrangement 50 with a deflection functionality and (optionally) a beam combining functionality.
  • a broadband anti-reflection coating 56 can be applied.
  • the deflection functionality of the prism arrangement 50 is achieved in that the respective transmission beam 32-1, 32-2, 32-3 from the optoelectronic components 30-1, 30-2, 30-3 is reflected by reflection at a respectively assigned reflection area 50 -1, 50-2, 50-3 of the prism arrangement 50 is deflected in a “common” direction or optical axis through the prism arrangement 50.
  • the prism arrangement 50 there is thus a reflecting or, as far as possible, totally reflecting deflection surface 50-1 for the individual transmission radiations 32-1, 32-2, 32-3 of the optoelectronic components 30-1, 30-2, 30-3 , 50-2, 50-3 provided to the beam deflection in the common, parallel optical axis 54 of the individual transmission beams 30-1, 30-2, 30-3, z. B. have different wavelengths to effect.
  • the beam combination prism 50 thus ends on the beam outlet side with the outlet surface 52 pointing away from the carrier substrate 20, 20-1, 20-2.
  • the end surface 53 of the Pris mas 50 at the opposite end can be designed differently, for example by a Attached square end to protect the mirror surface 50-1, as long as the 45° mirror surface 50-1 for beam deflection is not mechanically or optically impaired.
  • the first partial substrate 20-1 and the second partial substrate 20-2 can be mechanically firmly coupled, e.g. directly flanged, in order to form the carrier substrate 20.
  • first sub-substrate 20-1 and the second sub-substrate 20-2 can form different sections or regions of the carrier substrate 20, i.e. the first sub-substrate 20-1 and the second sub-substrate 20-2 can together form the carrier substrate 20, so that the first Module 10-1 and second module 10-2 are arranged on the common carrier substrate 20 as a combined photonic arrangement.
  • the wavelength range accessible with standard materials for this prism arrangement 50 extends from approximately 300 nm to approximately 2650 nm (“approx.” stands for a range of ⁇ 10% around the specified value).
  • this range can be extended to around 200 to around 3000 nm (“approx.” stands for a range of ⁇ 10% around the specified value), with unencapsulated MEMS, for example -Mirrors 60 are used. In any case, this wide range requires special anti-reflection coatings and, if necessary, a special mirror coating of the MEMS mirror surface 62.
  • the UV and IR extension range is of particular interest for spectroscopic applications for molecular excitation, but can also be used for object detection.
  • a light source 32-1 with a transmission radiation in the near infrared range can also be integrated, for example when using the optical projection arrangement 10 as an RGB scanner unit for data and image projection in mobile applications.
  • the prism arrangement 50 can have an optically effective coating, for example an anti-reflection coating 56, on the coupling-in surface 55 and/or the coupling-out surface 52.
  • a suitable beam combination prism is an optically cemented arrangement of optical glass panes with a thickness in the range 1 - 2 mm, which have been provided with specific dichroic filter coatings or one-sided mirroring and one-sided anti-reflection coating before optical cementing.
  • Optically cemented is understood to be, for example, a bond with an adhesive that is adapted to the refractive index (between two adjacent or adjacent side surfaces of two prism elements), with the adhesive also being optically transparent for the light beam to be transmitted, for example.
  • an adhesive that is adapted to the refractive index (between two adjacent or adjacent side surfaces of two prism elements), with the adhesive also being optically transparent for the light beam to be transmitted, for example.
  • a large number of optical glasses can be used for this, such as AK 7, KZFS12, L-LASF43, RAYVOLUTION etc.
  • the dichroic filter coatings are designed in such a way that they can be used without an air interface and preferably without the need for pre-polarization of the Transmission radiation (e.g. laser radiation) work as a transmission or blocking filter.
  • the filter characteristics are matched to the wavelengths of the emitters and their thermally induced change in wavelength with a sufficient tolerance of at least 20 nm.
  • a gold layer can also be suitable.
  • the cemented glass panes are sawn to a final size of a few millimeters, taking into account the 45° angle position of the inner filter layers, and the edges are optically polished and, if necessary, provided with a broadband anti-reflection layer made of several inorganic oxides or local absorber coatings (e.g. metal oxides, black paint). .
  • a broadband anti-reflection layer made of several inorganic oxides or local absorber coatings (e.g. metal oxides, black paint).
  • the frame structure 44 is mechanically firmly connected to the carrier substrate 20 and the prism arrangement 50, with the frame structure 44 having peripheral walls 44-1 (at least) being optically closed to the outside, for example.
  • FIG. 1c shows a top view
  • FIG. 1d shows a side view (cross-sectional view)
  • FIG. 1e shows a 3D view (three-dimensional view) of the prism arrangement 50 according to an exemplary embodiment.
  • the prism arrangement 50 has, for example, three optical elements or prism elements, e.g. B.
  • the two prism elements 50-1, 50-2, 50-3 are parallelepi- ped-shaped, while the third prism element 50-3 an im Essentially perpendicular (to the base of the prism assembly 50) having side surface (beam exit surface or decoupling surface).
  • other alignment planes can also be used for the decoupling surface in order to adjust the decoupling angle ⁇ and thus also the angle of incidence ⁇ onto the mirror element 62 for the respective desired application of the optical projection arrangement 10 .
  • the individual side surfaces of the prism arrangement 50 or the prism elements 50-1, 50-2, 50-3 are designated by the reference symbols F1-F11, with reference to these side surfaces F1-F11 of the Prism assembly 50 below possible From measurements and also the functions and operation of the prism assembly 50 is described in by way of example.
  • the prism arrangement 50 is provided, for example, for an RGB application, with a first wavelength A1 blue light with a wavelength of 450 nm +/- 20 nm, the second wavelength A2 green light with a wavelength of 510 nm +/- 20 nm, and the third wavelength A3 can correspond to red light with a wavelength of 635 nm +/- 20 nm.
  • a light-transmitting coating or anti-reflection coating is mentioned below, a light transmission or optical transmission for the respective wavelength of more than 99% is assumed.
  • a degree of reflection also reflectivity or reflectance
  • an absorptivity or absorption capacity of greater than 99% is assumed.
  • An exemplary tolerance range for the dimensions given below is in the range of +- 5% or +- 1% and for the angle information in a range between +- 5% or +- 2%.
  • a surface roughness (rms) of ⁇ 20 nm is also assumed, for example.
  • the area is 1 designed as a mirror surface for a first partial light beam with the wavelength ⁇ 1.
  • the side surface F2 has, for example, a length of 1.5 mm and is parallel to the base surface.
  • the side surface F2 is transparent for the wavelength ⁇ 1 and has an antireflection coating, for example.
  • the side surface F3 has a length of 1.5 mm, for example, and is formed parallel to the base surface.
  • the side surface F3 is transparent for the second wavelength ⁇ 2 and has an antireflection coating, for example.
  • the side surface F4 has a length of 1.7 mm, for example, and is formed parallel to the base surface.
  • the side surface F4 is optically transparent for the wavelength ⁇ 3 and has an anti-reflection coating, for example.
  • the side surfaces F2, F3, F4 correspond to the coupling surface 55 shown above.
  • the side surface F5 has a length of 1.5 mm, for example, and is formed perpendicular (vertical) to the base surface (the side surfaces F2 - F4).
  • the side surface F5 is transparent for the wavelengths ⁇ 1, ⁇ 2 and ⁇ 3.
  • the side surface F6 has a length of 1.5 mm, for example, and is formed parallel to the base surface.
  • the side surface F6 is, for example, designed to be matt or absorbing for the wavelengths ⁇ 1, ⁇ 2 and ⁇ 3.
  • the side surface F7 has, for example, a length of 1.5 mm parallel to the base surface and is also designed to be matt or absorbent.
  • the side surface F8 has a length of 2.12 mm, for example, and is formed at an angle of 45° to the base surface.
  • the side surface F8 is transparent for the wavelength ⁇ 1 and reflective for the wavelength ⁇ 2.
  • the side surface F9 has a length of 2.12 mm, for example, and is formed at an angle of 45° to the base surface.
  • the face F9 is transparent for the wavelengths ⁇ 1 and ⁇ 2 and reflective for the wavelength ⁇ 3.
  • the side surfaces F10 and F11 of the prism arrangement 50 are, for example, matt (with a matt surface finish or surface coating) or absorbent (with an absorbent surface finish).
  • 1c also shows the individual transmission radiations 32-1 (A1), 32-2 (12) and 32-3 (A3), which finally form the common, coupled-out transmission radiation 32 along the optical axis 54.
  • Fig. 1e shows to illustrate the geometric structure of the prism assembly 50 with the three prism elements 50-1, 50-2, 50-3 in a 3D view (three-dimensional view), the prism elements 50-1 , 50-2, 50-3 and the side surfaces F1, ..., F11 are drawn in again.
  • the side surfaces F2, F3 and F4 are designed for a 90° beam entry from the transmission components 30-1, 30-2, 30-3. Furthermore, the side surface F5 (decoupling surface 52) can be formed vertically to the base surface, and other alignment levels can also be used for the surface F5 in order to decouple the decoupling angle ⁇ and thus also the angle of incidence ⁇ onto the mirror element 62 for the respective desired application of the optical projection arrangement 10 to be adjusted.
  • the MEMS mirror arrangement 60 can be controlled, for example, with an external control signal S, e.g. via the contact or bonding areas 64, in order, based on the control signal S, to deflect the MEMS-based mirror element 62 and thus align the common transmission radiation 32 in a desired spatial direction (within the to cause mechanical deflection range of the mirror element 62).
  • the prism arrangement 50 of the first assembly 10-1 and the MEMS mirror arrangement 60 of the second assembly 10-2 are now arranged geometrically in relation to one another such that the emitted transmission radiation 32, which, for example, the individual transmission beams 32-1, 32-2, 32 -3 of the optoelectronic components 30-1, 30-2, 30-3 or any combina tion thereof, each at an angle of incidence ß, for example by the the deflection of the MEMS mirror element 62 that can be brought about with the drive signal S can be adjusted, impinges on the movably suspended MEMS-based mirror element 62 .
  • the emitted transmission radiation 32 which, for example, the individual transmission beams 32-1, 32-2, 32 -3 of the optoelectronic components 30-1, 30-2, 30-3 or any combina tion thereof, each at an angle of incidence ß, for example by the the deflection of the MEMS mirror element 62 that can be brought about with the drive signal S can be adjusted, impinges on the movably suspended MEMS-based mirror element 62
  • the angle of incidence ⁇ is in the idle state of the MEMS-based mirror element 62 in a range between 30° and 50° or between 37° and 43° (at 40°+/-3°).
  • the angle of incidence ⁇ is thus the intermediate angle between the incident transmission radiation 32 and the mirror surface of the MEMS-based mirror element 62 in the idle state.
  • the optical projection arrangement 10 comprises, for example, the transmission arrangement 30 with a plurality of semiconductor-based light sources 30-1, 30-2, 30-3, the lens arrangement (lens plane) 40 with a plurality of elements 40-1, 40-2, 40-3 and the deflection prism 50.
  • the semiconductor-based light sources 30-1, 30-2, 30-3 have a light exit direction or emission direction pointing away from the carrier substrate 20, the lens arrangement 40 for collimating the divergent radiation 32-1, 32-2, 32-3 of the optoelectronic light sources 30-1, 30-2, 30-3 is formed.
  • the deflection prism 50 now has the property of guiding the different transmission beams 32-1, 32-2, 32-3 provided by the light sources 30-1, 30-2, 30-3 at different wavelengths and coupling them out at a coupling-out angle ⁇ , wherein the guided transmission radiation 32 of the optoelectronic transmission components 30-1, 30-2, 30-3 strikes the movably suspended MEMS-based mirror surface 62 at the angle of incidence ⁇ .
  • This structural arrangement of the individual elements of the optical projection arrangement 10, ie the optoelectronic transmission components 32-1, 32-2, 32-3, the lens arrangement 40, the prism arrangement 50 and the MEMS mirror arrangement 60 and their geometric alignment and Assignment to each other can be an extremely compact (geo metric) structure with a small volume and small footprint (footprint) of the optical projection assembly 10 can be obtained.
  • the optical projection arrangement 10 which can be implemented in the form of a combined RGB scanner unit, can be used, for example, for data and image projection in mobile applications, such as in a headset for an AR or VR application as smart glasses (data glasses, augmented reality glasses and/or virtual reality glasses or helmet).
  • the optical projection arrangement 10 can, for example, also be operated in the interior of vehicles and can also be used with other wavelengths for spectroscopic applications in medicine, biology, agriculture or plant breeding and waste management.
  • Other areas of application are also possible as a pulsed beam source for LIDAR object detection.
  • applications in the area of local UV radiation are possible, for example for paint curing and sterilization.
  • a light source 32-# with a transmission radiation in the near infrared range can also be integrated, for example when using the optical projection arrangement 10 as an RGB scanner unit for data and image projection in mobile applications.
  • a light source with a transmission radiation in the near infrared range can be used, for example, in an application for data and image projection in a mobile application to recognize a hand in the image and reach for one virtual, projected object back to the application processor via an IR camera. So you can touch images and move objects or make entries by gripping a projected image.
  • the prism arrangement 50 and the MEMS mirror arrangement 60 can be arranged geometrically relative to one another such that the common optical axis 54 of the decoupled (common) transmission radiation 32 of the optoelectronic components 30 passes through the center point 62-1 of the Mirror element 62 (the mirror plate) runs.
  • the prism arrangement 50 and the MEMS mirror arrangement 60 can be arranged geometrically relative to one another in such a way that the emitted transmission radiation 32 of the optoelectronic transmission components 30 is arranged rotationally symmetrically around the center point of the mirror plate 62.
  • the common optical axis can therefore run through the center point of the mirror plate 62 and can be arranged in a rotationally symmetrical manner around this mirror plate 62 .
  • the alignment or deflection of the common transmission radiation 32-1, 32-2, 32-3 can thus be obtained extremely precisely in the desired spatial direction (within the deflection range of the mirror element 62) by means of the deflection of the mirror element 62 caused by the control signal S. Furthermore, a relatively large deflection range of the common transmission radiation 32 can be achieved by means of the controlled deflection of the mirror element 62 .
  • the lens arrangement 40 can be fixed in a defined focal position with respect to the transmission radiation 32-1, 32-2, 32-3 of the transmission components 30-1, 30-2, 30-3 by means of a lens holder structure 42 .
  • the individual lens elements 40-1, 40-2, 40-3 can each be arranged and fixed in a defined focus position with respect to the assigned transmission component 30-1, 30-2, 30-3.
  • the prism arrangement 50 can be arranged on or on the frame structure 44 and fixed to the same. The prism arrangement 50 can thus be arranged and fixed on the first partial substrate (carrier substrate) 20 - 1 by means of the frame structure 44 .
  • the lens holder structure 42 can be configured in a frame structure 44 or as part of the frame structure 44 .
  • the frame structure 44 can be formed with peripheral (e.g. vertically formed and opaque) side walls 44-1 (at least) laterally optically closed to the outside. In this way, for example (at least in sections), an optical channel separation between the transmission radiation 32-1, 32-2, 32-3 of the transmission components 30-1, 30-2, 30-3 up to the coupling into the prism arrangement 50 can be obtained.
  • beam combination prism 50 can therefore rest on frame structure 44, which forms an outwardly optically closed frame with peripheral walls 44-1, insofar as these are designed to be non-transparent for the respective transmission radiation 32-1, 32-2, 32-3.
  • the mechanical fastening can be carried out, for example, by gluing with low-emission adhesives, by means of low-melting solder materials or by a mechanical press connection.
  • the lens holder structure 42 within the frame structure 44 is designed so that the focal position of the individual collimating lenses 40-1, 40-2, 40-3 or an integrated multiple lens 40 can be changed by vertical displacement and fixed in a specific focal position.
  • This positional fixation on the frame structure 44 can be achieved by an adhesive (UV-curing adhesive), by a soldering material, glass frit, solder or by me chanical clamping.
  • polarization plates 46 (retar of the plates) can be arranged or integrated in the lens holder structure 44 below or above the lens elements 40-1, 40-2, 40-3 in order to transmit the radiation 32-1, 32-2, 32-3 for the dichroic coatings 50-1, 50-2, 50-3 located in the prism 50 with a suitable pre-polarization.
  • the decoupling angle a can vary.
  • the MEMS mirror plate 62 may be located closer or slightly farther from the bottom edge 50-4 of the prism 50 accordingly. If one takes, for example, the construction height H of the prism 50 as a unit of measurement, the mirror plate 62 (or its center point 62-1) in this arrangement and orientation is no further than 12 such units of measurement H (12*H) from the lower edge 52- 1 of the prism out coupling surface 52 (lateral) away.
  • the mirror element 62 can be arranged in an inclined (tilted) state (in a preferred inclination) in the direction of the prism arrangement 50.
  • the mirror arrangement 60 can be placed and fixed on a wedge 24 or the second substrate section 20-2 can have a wedge-shaped elevation 24 in order to obtain the inclined (pretilted) structure of the mirror arrangement (in the direction of the prism arrangement).
  • it may be desirable to tilt the mirror arrangement 60 with a preferred inclination in the direction of the prism 50 and thus the area that can be actively irradiated from the "field of view" ( field of view) of the mirror scanner 10 in the direction of the orthogonal axis with respect to the Align carrier substrate 20.
  • This can be formed by an underlying wedge-shaped molded part 24 or by constructing the mirror 60 on the second substrate section 20-2, which is designed to be inclined accordingly.
  • the optoelectronic transmission components 30-1, 30-2, 30-3 can be embodied as semiconductor-based light sources, e.g. LEDs or laser diodes for an RGB transmission radiation 32. Furthermore, the semiconductor-based light sources 30-1, 30-2, 30-3 can be arranged, for example, as an integrated bare die arrangement on the first partial substrate 20-1. If necessary, the semiconductor-based light sources 30-1, 30-2, 30-3 can already be provided with integrated collimation lenses 40-1, 40-2, 40-3 or have additional integrated collimation lenses.
  • the semiconductor-based light sources 30-1, 30-2, 30-3 can also be pre-packaged in a common housing or individual housings, and possibly again with the integrated collimation lenses 40-1, 40-2, 40 -3 be provided.
  • edge-emitting laser diodes or superluminescence diodes 30-1, 30-2, 30-3 (here arranged to radiate upwards) can be used, which allow higher beam powers to be generated .
  • the laser diodes or emitters 30-1, 30-2, 30-3 Kings NEN be built on a common submount 34, in addition to the heat dissipation also serves for electrical contacting.
  • This version is also applicable to vertically emitting emitters (VCSEL, LED, micro-LED, quantum dots, etc.).
  • CTE adaptation coefficient of thermal expansion
  • the semiconductor-based light sources 30-1, 30-2, 30-3 can also be constructed directly on the carrier substrate 20-1 or the carrier substrate 20, for example without a submount 34 (see e.g. also 4, 6 and 7).
  • the semiconductor light sources 30-1, 30-2, 30-3 can also be constructed on ceramic submounts 34 (with an Al 2 O 3 , AIN, SI material or another ceramic material) in order to dissipate heat to improve and absorb mechanical stress.
  • the submounts can carry either only one light source or multiple light sources.
  • edge-emitting laser diodes e.g. around a 90° edge
  • SLED superluminescent light-emitting diodes
  • the semiconductor light sources 30-1, 30-2, 30-3 can also be constructed directly on the carrier substrate 20 and contacted.
  • the carrier substrate 20 (20-1 + 20-2) can, for example, have a printed circuit board material or a thermally conductive and electrically insulating ceramic material with corresponding conductor track and pad metallizations or can also (e.g. for a gas-tight design) have a thermally conductive ceramic material.
  • Material with a low coefficient of thermal expansion such as Al2O3, AIN, SI3N4, LTCC, HTCC or a semiconductor material (e.g. silicon), or consist of the same.
  • a dome-shaped (dome-shaped) glass cap 70 can be joined to the second partial substrate 20-2.
  • the MEMS mirror arrangement 60 can, for example, be surrounded by a dome-shaped cover 70, for example a glass cap, which is transparent to the transmission radiation 32.
  • the transparent cover 70 can have an optically effective coating 72, for example an anti-reflection coating, on the inner and/or outer surface 70-A, 70-B of the transparent cover 70.
  • the optically effective coating 72 can be provided at least in regions on the radiation passage surfaces of the transparent cover 70 .
  • the cover 70 (e.g. dome-shaped glass cap) of the mirror 60 is therefore provided with an anti-reflection coating 72 on both sides, for example, in order to reduce scattered reflections.
  • the dome geometry is preferably rotationally symmetrical, with a slight elliptical base with a ratio of the longitudinal to the transverse axis of up to 1:0.8 being possible.
  • the cover 70 is, for example, at least as high above the mirror surface 62 as corresponds to a diameter D of the movably suspended mirror plate 62 and no higher than half the diameter G/2 of the glass cap 70 itself, measured at the lower inner area of the bulging cap area.
  • the wall thickness of the cover 70 in the optically irradiated area is preferably so thin and uniform that the optical influence on the beam divergence is negligible, i.e. a divergence of less than 0.3°, for example.
  • the cover 70 is not thicker than 200 ⁇ m, 120 ⁇ m or 60 ⁇ m in this area.
  • the transparent cover 70 is designed, for example, as a dome-shaped glass cap or glass dome, but the cover can also have a geometric configuration that differs from a hemisphere.
  • An elliptical or oval peripheral line (parallel to the x-y plane) or an elliptical or oval cross-sectional line (parallel to the x-z plane) can also be provided (at least in sections) for the dome-shaped cover.
  • the diameter of the cover 70 can be, for example, in a range from 2 mm to 16 mm and from about 3 mm to 5 mm and about 4 mm, while the height of the cover 70 above the mirror center point 62-1 is in a range of 1 mm up to 8 mm and about 1.5 mm.
  • the Mirror diameter D ie the diameter of the deflectable part of the MEMS mirror 62, can be in a range from 0.5 mm to 4 mm or from 1 mm to 1.4 mm.
  • the MEMS mirror 62 is mounted on the same carrier substrate 20 as the light sources 30-1, 30-2, 30-3.
  • the carrier substrate 20 can have silicon, for example, although various printed circuit board materials and ceramics can also be considered.
  • the use of a submount 34 is not absolutely necessary depending on the substrate 20 and in particular with small laser power lines.
  • the mirror 62 is protected, for example, by the glass window 70 or hermetically capped, it being possible for a defined internal atmosphere to be enclosed in the glass window 70 with a hermetic capping.
  • the dome-shaped geometry of the glass cap 70 can vary in the height of the half-shell.
  • the second partial substrate 20-2 can also be formed in a gas-tight manner and can have the same material or the same combination of materials as the first partial substrate 20-1.
  • the dome-shaped (dome-shaped) glass cap 70 can thus be hermetically joined to the second sub-substrate 20-2 in order to provide a hermetically sealed housing, e.g form.
  • a broadband anti-reflection coating 56 is applied at the exit surface 52 of the prism 50.
  • the cover element 38 can be designed in such a way that, as part of a laser housing, it encloses a defined inner atmosphere together with the carrier substrate 20 as the base, which usually consists of a water- and hydrocarbon-free gas composition at normal pressure, e.g. nitrogen/oxygen at approx 1000 mbar +/- 100 mbar. Other pressures or priority filling gases are also conceivable.
  • the light sources e.g. laser diodes
  • 30-1, 30-2, 30-3 each have an additional light-sensitive Element (e.g. a photodiode) 31-1, 31-2, 31-3 can be provided.
  • This additional photodiode 31-1, 31-2, 31-3 can be used for power monitoring for the radiation sources 30-1, 30-2, 30-3, for example, adjacent to the respectively assigned radiation source 30-1, 30-2, 30-3 be arranged.
  • the photodiodes are arranged or mounted in order to detect the existing scattered radiation of the assigned th laser diode. Since the frame structure 44 has, for example, side walls 41-1 that are optically closed to the outside, optical channel separation between the transmission components 30-1, 30-2, 30-3 can be achieved, so that crosstalk between the transmission components is avoided and the respective photodiodes only transmit the Detect scattered radiation from the assigned transmission components.
  • the photodiodes can, for example, have an edge length in the size of 400 ⁇ m to 700 ⁇ m and can therefore easily be arranged adjacent to the transmission components 30-1, 30-2, 30-3.
  • the additional photodiode 30-1, 30-2, 30-3 can therefore be integrated in such a way that a small proportion of the emitted radiation 32-1, 32-2, 32-3 of the respective transmission component 30-1, 30- 2, 30-3 to the associated photodiode 31-1,
  • the beam removal to the photodiode can also be arranged, for example, in front of the MEMS mirror 62 or also behind the MEMS mirror 62, preferably on or close to the optical axis 54.
  • the beam deflection can be realized, for example, via an angular prism (beam pickup) or a light guide structure that lies outside the field of view used for the actual projection (field of view) and is deliberately irradiated at certain angular positions of the mirror.
  • This also allows the mirror function, in particular the mirror amplitude, to be checked electronically and readjusted if necessary, for example to compensate for deterioration in the defined internal atmosphere in the mirror housing 60, 70 (e.g. the enclosed vacuum) over time.
  • the increase in attenuation associated with the impairment of the defined internal atmosphere in the glass window 70 leads to an increased electrical power consumption, which otherwise could not be monitored directly.
  • Checking the mirror movement is useful, for example, for the process of switching on the optical projection arrangement 10 (the RGB scanner) and in particular against the background of the operator's eye safety.
  • a second (further) photodiode (PD) 31-4 e.g. with a lens element 40-4 with optical alignment can be arranged pointing towards a viewer (operator) to prevent the User looks directly at the MEMS mirror 62. If this further photodiode 31-4 is illuminated by back-reflection at the viewer, the projection system 10 can be brought into operation within a very short time, e.g. B. ⁇ 1 ps, is switched off.
  • optical projection arrangement 10 Some essential aspects of the optical projection arrangement 10 according to the invention from FIGS. 1a-e are summarized again below.
  • the angle a is in a range between 20° and 40°, preferably at 27° ⁇ 3°.
  • the angle ⁇ is in a range between 30° and 50°, preferably at 40° ⁇ 3°.
  • the common optical axis 54 passes through the center point of the mirror plate 62 and can be arranged in a rotationally symmetrical manner around this mirror plate 62 .
  • the beam combination prism 50 ends on the beam outlet side with an exit surface 52 pointing away from the carrier substrate 20 .
  • the terminating surface 53 of the prism 50 at the opposite end can be designed differently, e.g. with an attached square terminating end to protect the mirror surface, provided that the 45° mirror surface 50-1 for beam deflection is not mechanically or optically impaired as a result.
  • the wavelength range accessible with standard materials for this device extends from about 300 nm to about 2650 nm. By using quartz window and prism materials, this range can be extended to about 20 to about 3000 nm, preferably in this case uncapped MEMS mirrors 60 used. In any case, this wide range requires special anti-reflection coatings 56, 72 and, if necessary, a special mirror coating of the MEMS mirror surface 62.
  • the UV and IR extension range is particularly interesting for spectroscopic applications for molecular excitation, but can also be used for object detection will.
  • AF32 glass with a very flat (plateau-shaped) transmission characteristic or alternatively Borofloat 33 (BF33) with a similar transmission characteristic can be used as the material for the covering element 38 or at least the transmission window 38-3 of the covering element 38.
  • the beam combining prism 40 rests on the frame structure 44 (with the lens holder structure 42), which is optically at least outwardly with peripheral walls 44-1 completed frame structure 44 forms.
  • This frame structure 44 is mechanically firmly connected to the carrier substrate 20 and the prism 50, the prism 50 covering the frame structure 44, for example, entirely.
  • the method of mechanical attachment can be based on an adhesive bond.
  • the lens holder structure 42 within the frame structure 44 is designed in such a way that the focal position of the individual collimating lenses 40-1, 40-2, 40-3 or an integrated multiple lens 40 can be changed by vertical displacement and fixed in a specific focal position. This position fixation can be performed by a UV-curing adhesive. Other methods, such as mechanical clamping, can also be used.
  • Optional polarization plates 46 can be integrated in the lens holder 42 below or above the lenses 40-# in order to suitably pre-polarize the radiation 32 for the dichroic coatings located in the prism.
  • the lens assembly for example with UV-curing adhesive, is also possible directly on the cover 38 with the optical transmission window 38-3, with both the lateral position and the focal position being able to be adjusted by the adhesive connection.
  • the dome-shaped glass cap 70 of the MEMS mirror 60 is provided with an anti-reflective coating 72 on both sides, for example, in order to reduce scattered reflections.
  • the selected geometry of the glass cap 70 allows any reflections to be scattered and not focused in the image area.
  • the wall thickness of the glass cap 70 in the optically irradiated area is preferably made so thin and uniform that the optical influence on the beam divergence is negligible.
  • the glass cap should not be thicker than 200 ⁇ m in this area, preferably not thicker than 140 ⁇ m.
  • the semiconductor light sources 30-# can be constructed on ceramic submounts 34, such as Al20 3, AlN, SbN4, or other ceramics, in order to improve heat dissipation and absorb mechanical stress.
  • the submounts 34 can carry either only one light source 30-# or multiple light sources 30-#.
  • By metallizing the submounts around a 90° edge it is also possible to construct and contact edge-emitting laser diodes (ELED) and superluminescence light-emitting diodes (SLED) in such a way that their radiation is emitted upwards.
  • the semiconductor light sources 30 -# can also be built up and contacted directly on the gas-tight carrier substrate 20 .
  • the gas-tight carrier substrate 20 (20-1 and/or 20-2) has, for example, a thermally conductive ceramic material with a low coefficient of thermal expansion, such as Al2O3, AIN, S13N4, LTCC, HTCC, or silicon.
  • the MEMS mirror assembly 60 can also have a structure other than a dome-shaped glass cover structure 70, with the hermetic sealing of the MEMS mirror assembly 60 being optional.
  • a vacuum is not (absolutely) necessary for operation.
  • the combined RGB scanner unit is used, for example, for data and image projection in mobile applications but also in the interior of vehicles and can be operated with other wavelengths for spectroscopic applications in medicine, biology, agriculture or plant breeding and waste management. Further areas of application as a pulsed beam source for LIDAR object detection are possible. In addition, applications in the area of local UV radiation are possible, for example for paint curing and sterilization.
  • FIG. 2 shows an exemplary embodiment of the optical projection arrangement in a cross-sectional view according to a further exemplary embodiment.
  • the differences or the different configurations of the optical projection arrangement 10 of FIG. 2 compared to the exemplary embodiment of FIGS. 1a-e are essentially presented. Therefore, the above description of FIGS. 1a-e can be applied accordingly to the following description of the exemplary embodiment of FIG. 2, where the technical effects resulting from the differences are presented in the following.
  • FIG. 2 shows an exemplary cross-sectional view of the optical projection arrangement 10 with the drawing plane parallel to the x-z plane.
  • the optical projection arrangement 10 now has, for example, the first assembly 10-1, which is arranged on the first partial substrate 20-1, and the second assembly 10-2, which is arranged on the second partial substrate 20-2.
  • the first subassembly 10-1 of the optical projection arrangement 10 comprises the transmission arrangement 30 with the plurality of optoelectronic (semiconductor-based) transmission components 30-1, 30-2, 30-3, the gas-tight cover element 38, the lens arrangement 40 and the prism Arrangement 50.
  • the lens arrangement 40 is fixed in the defined focal position on the gas-tight cover element 38, e.g. glued.
  • the second subassembly 10-2 of the optical projection arrangement 10 now includes the MEMS mirror arrangement 60 with a movably suspended, deflectable MEMS-based mirror element 62 on the second partial substrate 20-2.
  • edge-emitting laser diodes or superluminescent diodes 30-1, 30-2, 30-3 (here arranged to radiate upwards) can be used, which allow higher beam powers to be generated .
  • the laser diodes 30-1, 30-2, 30-3 can be built on individual AIN submounts 34, which are also used for electrical contacting in addition to heat dissipation.
  • the semiconductor light sources 30-1, 30-2, 30-3 can also be built up and contacted directly on the carrier substrate 20, for example.
  • Embodiments thus relate to an optical projection arrangement 10 based on vertically emitting laser diodes (VCSEL) 30-#.
  • the lenses 40-# are glued to the hermetically joined glass cover 38 in the focal position.
  • the division into an area 20-1, 38 that is hermetically sealed against gas exchange and an open area largely reduces restrictions with regard to the replaceable joining materials and materials for optics assembly in the open area.
  • 38 are the semiconductor light sources 30-# (at least one, but there can also be a plurality) on individual submounts, a common submount 34 or using direct mounting technology on the carrier substrate 20 , whose design and connection technology, for example, does not use organic materials. Rather, these structures can be realized using metallic joining techniques, i.e. soft-soldered connections based on tin or indium-based soft solders or eutectic soldering, e.g. in the AuSn system.
  • connection techniques based on sintering technology, e.g. with silver-based sintering pastes, are also possible. These mentioned metallic connection techniques can also be used for the frame sealing of the glass cover or silicon-glass cover 38 or alternative cover variants with an optical transmission window 38-3. These alternative lid variations may include a milled metal frame or deep drawn metal sheets 38 with a hermetically inserted glass window 38-3 (see, e.g., Figure 5).
  • FIG. 3 shows an exemplary embodiment of the optical projection arrangement in a cross-sectional view according to a further exemplary embodiment.
  • the differences or the different configurations of the optical projection arrangement 10 of FIG. 3 compared to the exemplary embodiment of FIGS. 1a-e and 2 are essentially presented. Therefore, the above description of Figs. 1a-e and 2 can be applied accordingly to the following description of the exemplary embodiment of FIG. 3, the technical effects resulting from the differences being presented in the following in particular
  • FIG. 3 shows an exemplary cross-sectional view of the optical projection arrangement 10 with the drawing plane parallel to the x-z plane.
  • the optical projection arrangement 10 now has, for example, the first assembly 10-1, which is arranged on the first partial substrate 20-1, and the second assembly 10-2, which is arranged on the second partial substrate 20-2.
  • the first subassembly 10-1 of the optical projection arrangement 10 comprises the transmission arrangement 30 with the plurality of optoelectronic (semiconductor-based) transmission components 30-1, 30-2, 30-3, the gas-tight cover element 38, the lens arrangement 40 and the prism Arrangement 50.
  • the lens arrangement 40 is fixed in the defined focal position on the gas-tight cover element 38, e.g. glued.
  • the second subassembly 10-2 of the optical projection arrangement 10 now includes the MEMS mirror arrangement 60 with a movably suspended, deflectable MEMS-based mirror element 62 on the second partial substrate 20-2.
  • edge-emitting laser diodes or superluminescence diodes 30-1, 30-2, 30-3 (arranged to radiate upwards here) can be used, which make it possible to generate higher beam powers .
  • the frame structure 44 can therefore form a frame that is optically closed to the outside, insofar as the wall material is formed to be non-transparent for the respective transmission radiation 32-1, 32-2, 32-3.
  • the gas-tight cover element 38 can have a separating element 38-4, for example, in order to form two partial cavities 38-A, 38-B for optical channel separation of the semiconductor light sources 30-1 and 30-2, 30-3.
  • Exemplary embodiments thus relate to an optical projection arrangement 10 with a glass-silicon cover 38 with a double cavity 38-A, 38-B.
  • the cavity height H 38 is determined by the silicon frame 38-1 of the cover 38 and is not based on a silicon standard Wafer thickness limited to 725 pm.
  • the cavity height H 33 can be adapted to special requirements of the optical structures in the cavity 20, 38 by using particularly thick silicon wafers or a stacked structure.
  • Both the method for the production of glass covers 38 and for the production of silicon-glass covers 38 allow the formation of multi-cavities 38-A, 38-B, ... in a cover 38, which allow optical channel separation and if necessary to realize a separation of the atmospheres.
  • reactive air gases nitrogen, oxygen, carbon monoxide, carbon dioxide, hydrogen and water
  • FIG. 4 shows an exemplary embodiment of the optical projection arrangement in a cross-sectional view according to a further exemplary embodiment.
  • the differences or the different configurations of the optical projection arrangement 10 of FIG. 4 compared to the exemplary embodiment of FIGS. 1a-e, 2 and 3 are essentially presented. Therefore, the above description of FIGS. 1a-e, 2 and 3 can be applied accordingly to the following description of the exemplary embodiment of FIG. 4, the technical effects resulting from the differences being presented below in particular
  • FIG. 4 shows an exemplary cross-sectional view of the optical projection arrangement 10 with the plane of the drawing parallel to the xz plane.
  • the optical projection arrangement 10 now has, for example, the first assembly 10-1, which is arranged on the first partial substrate 20-1, and the second assembly 10-2, which is arranged on the second partial substrate 20-2.
  • the first subassembly 10-1 of the optical projection arrangement 10 comprises the transmission arrangement 30 with the plurality of optoelectronic (semiconductor-based) transmission components 30-1, 30-2, 30-3, the gas-tight cover element 38, the lens arrangement 40 and the prism Arrangement 50.
  • the lens arrangement 40 is in the defined focus position on the gas-tight cover element.
  • ment 38 fixed, eg glued.
  • the second subassembly 10-2 of the optical projection arrangement 10 now includes the MEMS mirror arrangement 60 with a movably suspended, deflectable MEMS-based mirror element 62 on the second partial substrate 20-2.
  • the frame structure 44 can therefore form a frame that is optically closed to the outside, insofar as the wall material is formed to be non-transparent for the respective transmission radiation 32-1, 32-2, 32-3.
  • the gas-tight cover element 38 can have a separating element 38-4, for example, in order to form two partial cavities 38-A, 38-B for optical channel separation of the semiconductor light sources 30-1 and 30-2, 30-3.
  • the semiconductor-based light sources 30-1, 30-2, 30-3 can also be mounted directly on the carrier substrate 20-1 or the carrier substrate without a submount 34 20 to be constructed.
  • This version is particularly suitable for vertically emitting emitters (VCSEL, LED, micro LED, etc.).
  • VCSEL vertically emitting emitters
  • FIG. 4 without submount 34 can be applied to all of the previously illustrated exemplary embodiments in FIGS. 1a-b, 2 and 3.
  • FIG. 5 shows an exemplary embodiment of the optical projection arrangement in a cross-sectional view according to a further exemplary embodiment.
  • the differences or the different configurations of the optical projection arrangement 10 of FIG. 5 compared to the exemplary embodiment of FIGS. 1a-e, 2, 3 and 4 are essentially presented.
  • the above description of FIGS. 1a-e, 2, 3 and 4 can therefore be applied accordingly to the following description of the exemplary embodiment from FIG. 5, with the technical effects resulting from the differences being presented in the following in particular
  • FIG. 5 shows an exemplary cross-sectional view of the optical projection arrangement 10 with the plane of the drawing parallel to the xz plane.
  • the optical projection arrangement 10 now has, for example, the first assembly 10-1, which is arranged on the first partial substrate 20-1, and the second assembly 10-2, which is arranged on the second partial substrate 20-2.
  • the first subassembly 10-1 of the optical projection arrangement 10 comprises the transmission arrangement 30 with the plurality of optoelectronic (semiconductor-based) transmission components 30-1, 30-2, 30-3, the gas-tight cover element 38, the lens arrangement 40 and the prism Arrangement 50.
  • the lens arrangement 40 is fixed in the defined focus position on the gas-tight cover element 38, eg glued.
  • the second subassembly 10-2 of the optical projection arrangement 10 now includes the MEMS mirror arrangement 60 with a movably suspended, deflectable MEMS-based mirror element 62 on the second partial substrate 20-2.
  • the hermetic cover element 38 has, as a further alternative cover variant, for example a milled metal frame 38-1 or deep-drawn metal sheets 38-1 with a hermetically inserted glass window 38-3.
  • Exemplary embodiments thus also relate to an optical projection arrangement 10 with a metal-glass cover 38 with a hermetic edge seal 38-1, 38-2 and a hermetically inserted glass window 38-3.
  • FIG. 6 shows an exemplary embodiment of the optical projection arrangement in a cross-sectional view according to a further exemplary embodiment.
  • the differences or the different configurations of the optical projection arrangement 10 of FIG. 6 compared to the exemplary embodiment of FIGS. 1a-e and 2-5 are essentially presented. Therefore, the above description of FIGS. 1a-e and 2-5 can be applied accordingly to the following description of the exemplary embodiment of FIG. 6, the technical effects resulting from the differences being presented in the following
  • FIG. 6 shows an exemplary cross-sectional view of the optical projection arrangement 10 with the plane of the drawing parallel to the xz plane.
  • the optical projection arrangement 10 now has, for example, the first assembly 10-1, which is arranged on the first partial substrate 20-1, and the second assembly 10-2, which is arranged on the second partial substrate 20-2.
  • the first subassembly 10-1 of the optical projection arrangement 10 comprises the transmission arrangement 30 with the plurality of optoelectronic (semiconductor-based) transmission components 30-1, 30-2, 30-3, the gas-tight cover element 38, the lens arrangement 40 and the prism Arrangement 50.
  • the lens arrangement 40 is fixed in the defined focus position on the gas-tight cover element 38, for example glued.
  • the second subassembly 10-2 of the optical projection arrangement 10 now includes the MEMS mirror arrangement 60 with a movably suspended, deflectable MEMS-based mirror element 62 on the second partial substrate 20-2.
  • an outer cap or housing 64 can be provided for the projection arrangement 10, the housing 64 being arranged on the substrate 20 and surrounding the first and second assemblies 10-1, 10-2 .
  • an optical exit window 66 is arranged in the outer housing 64 adjacent to the MEMS mirror arrangement 60 with the glass dome 70 .
  • the optical exit window 66 is transparent to the transmission radiation 32 in order to let the transmission radiation 32 coming from the mirror arrangement 60 through to the outside.
  • the optical (optically transparent) exit window 66 has dimensions, for example, in order to release the area that can be actively irradiated by the field of view of the mirror scanner 10 (field of view).
  • the outer cap 64 is provided, for example, to provide further protection and/or hermetic shielding of the entire optical projection arrangement from the ambient atmosphere.
  • FIG. 7 shows an exemplary embodiment of the optical projection arrangement in a cross-sectional view according to a further exemplary embodiment.
  • the differences or the different configurations of the optical projection arrangement 10 of FIG. 7 compared to the exemplary embodiment of FIGS. 1a-e and 2-6 are essentially presented. Therefore, the above description of FIGS. 1a-e and 2-6 can be applied accordingly to the following description of the exemplary embodiment of FIG. 7, the technical effects resulting from the differences being presented below in particular
  • FIG. 7 shows an exemplary cross-sectional view of the optical projection arrangement 10 with the plane of the drawing parallel to the xz plane.
  • the optical projection arrangement 10 now has, for example, the first assembly 10-1, which is arranged on the first partial substrate 20-1, and the second assembly 10-2, which is arranged on the second partial substrate 20-2.
  • the first subassembly 10-1 of the optical projection arrangement 10 comprises the transmission arrangement 30 with the plurality of optoelectronic (semiconductor-based) transmission components 30-1, 30-2, 30-3, the gas-tight cover element 38, the lens arrangement 40 and the prism Arrangement 50.
  • the lens arrangement 40 is fixed in the defined focus position on the gas-tight cover element 38, for example glued.
  • the second subassembly 10-2 of the optical projection arrangement 10 now includes the MEMS mirror arrangement 60 with a movably suspended, deflectable MEMS-based mirror element 62 on the second partial substrate 20-2.
  • the mirror element 62 can be arranged in a state (in a preferred inclination) which is inclined (tilted) in the direction of the prism arrangement 50 .
  • the mirror arrangement 60 can be placed and fixed on a wedge 24, or the second substrate section 20-2 can have a wedge-shaped elevation 24 in order to maintain the inclined (pre-tilted) structure of the mirror arrangement (in the direction of the prism arrangement).
  • it may be desirable to tilt the mirror arrangement 60 with a preferred inclination in the direction of the prism 50 and thus the area that can be actively irradiated from the "field of view" ( field of view) of the mirror scanner 10 in the direction of the orthogonal axis with respect to the Align carrier substrate 20.
  • This can be formed by an underlying wedge-shaped molded part 24 or by constructing the mirror 60 on the second substrate section 20-2, which is designed to be correspondingly inclined.
  • This arrangement with the pre-tilted mirror arrangement 60 can be provided, for example, to allow the transmission beam 32 to impinge on the mirror element 62 from above as steeply or perpendicularly as possible (e.g. ideally perpendicularly) and (ideally) not to cause any shadows to be cast during its beam guidance.
  • the pre-tilted arrangement of the mirror arrangement 60 results in the steepest possible angle of incidence ß of the transmission beam 32 on the mirror element 62, with the scanned beam 32 also being relatively far from the glass dome (dome) 70 when it exits the glass dome (the dome). lower edge of the coupling element 70 removes this passage.
  • the thickness of the glass material of the glass dome 70 which increases towards the lower edge of the glass dome 30 , does not exert any optical disruptive influences on the beam 32 . Furthermore, the projected image produced by the beam 32 is less laterally shifted. In both cases, the mirror plate 62 can be aligned parallel to the assembly substrate 20 in the rest position.
  • a device with a laterally inclined MEMS mirror 60 can be provided, for example, in order to be able to adjust the angular position of the irradiatable area more orthogonally to the carrier substrate.
  • an outer cap or housing 64 can optionally be provided for the projection arrangement 10, with the optional housing 64 being arranged on the substrate 20 and the first and second assemblies 10-1, 10- 2 surrounds.
  • an optical exit window 66 is arranged in the optional outer housing 64 adjacent to the MEMS mirror arrangement 60 with the glass dome 70 .
  • the optical exit window 66 is transparent to the transmission radiation 32 in order to allow the transmission radiation 32 coming from the mirror arrangement 60 to pass to the outside.
  • the optical (optically transparent) exit window 66 has, for example, dimensions in order to release the field of view of the mirror scanner 10 that can be actively irradiated (field of view).
  • the optional outer cap 64 is provided, for example, to provide further protection and/or also hermetic shielding of the entire optical projection arrangement from the ambient atmosphere.
  • FIG. 8 shows an exemplary embodiment of the optical projection arrangement in a cross-sectional view according to a further exemplary embodiment.
  • the differences or the different configurations of the optical projection arrangement 10 of FIG. 8 compared to the exemplary embodiment of FIGS. 1a-e and 2-7 are essentially presented. Therefore, the above description of FIGS. 1a-e and 2-7 can be applied accordingly to the following description of the exemplary embodiment of FIG. 8, the technical effects resulting from the differences being presented below in particular
  • FIG. 8 shows an exemplary cross-sectional view of the optical projection assembly 10 with the drawing plane parallel to the x-z plane.
  • the optical projection arrangement 10 now has, for example, the first assembly 10-1, which is arranged on the first partial substrate 20-1, and the second assembly 10-2, which is arranged on the second partial substrate 20-2.
  • the first subassembly 10-1 of the optical projection arrangement 10 comprises the transmission arrangement 30 with the plurality of optoelectronic (semiconductor-based) transmission components 30-1, 30-2, 30-3, the gas-tight cover element 38, the lens arrangement 40 and the prism Arrangement 50.
  • the lens arrangement 40 is fixed in the defined focus position on the gas-tight cover element 38, e.g. glued.
  • the second subassembly 10-2 of the optical projection arrangement 10 now includes the MEMS mirror arrangement 60 with a movably suspended, deflectable MEMS-based mirror element 62 on the second partial substrate 20-2.
  • the gas-tight cover element 38 shown in FIG. 8 can be produced, for example, using the production method or process sequence for the production of glass cover substrates shown below in FIG. 12 .
  • the cover element 38 has, for example, a (single) homogeneous material or glass material and is hermetically sealed (gas-tight) with the substrate 20 or with the first partial substrate 20-1 ge adds.
  • FIG. 9 now shows an exemplary flowchart of a method 100 for producing the optical projection arrangement 10 according to an exemplary embodiment, with reference being made to the elements and assemblies illustrated in FIGS. 1a-e and 2-8.
  • the method 100 for producing the optical projection arrangement 10 includes a step 110 of arranging a first assembly 10-1 on a gas-tight first partial substrate 20-1.
  • the step 110 of arranging also includes a step 112 of arranging an optoelectronic component (e.g.
  • the transmission component) 30 - # on the first partial substrate 20-1 with at least part of the transmission radiation 32 of the optoelectronic component 30 having a main emission direction in one area of +- 30° to a vertical of the first partial substrate 20-1, and also a step 114 of hermetically joining a gas-tight cover element 38 to the first partial substrate 20-1 in order to provide a hermetically sealed housing for the optoelectronic component 30, wherein the Covering element 38 has a material that is transparent to the transmitted radiation, at least in the area of the main beam direction.
  • the step of arranging 110 further includes a step 116 of arranging a lens assembly 40 fixed with respect to the cover member 38 for collimating the z. B. divergent transmission radiation 32 of the optoelectronic component 30 and also a step 118 of arranging a prism assembly 50, z. B. with deflection and beam combination functionality, fixed with respect to the cover element 38 or to the cover element 38, the prism arrangement 50 being configured to guide the collimated transmission 32 of the optoelectronic component and at a beam angle, e.g. B. a first angle a, relative to a decoupling surface 52 of the prism arrangement 50 acting as a deflection prism.
  • the radiation angle a can be in a range between 20° and 40° or 27°+ ⁇ 3°, for example.
  • the method 100 further includes a step 120 of arranging a second assembly 10-2 on a second partial substrate 20-2.
  • the step 120 of arranging further comprises a step 122 of arranging a, e.g. B. with a control signal anêtba ren, MEMS mirror assembly 60 with a movably suspended and z. B.
  • deflectable MEMS-based mirror element 62 (mirror surface) on the second partial substrate 20-2, wherein the prism arrangement 50 and the MEMS mirror arrangement 60 are arranged geometrically in relation to one another such that the decoupled transmission radiation 32 (transmission beam) strikes the movably suspended MEMS-based mirror element 62 at an angle of incidence ⁇ , the Angle of incidence ß in the rest state of the MEMS-based mirror element is in a range between 30 ° and 50 ° or 40 ° + - 3 °.
  • the angle of incidence ⁇ on the mirror surface 62 of the MEMS mirror element 60 can be adjusted by deflecting the MEMS mirror element 62 .
  • the optoelectronic component 30 has a plurality of semiconductor-based light sources 30-#, e.g. B. LEDs or laser diodes for an RGB transmission radiation 32, wherein the method 100 further comprises a step 130 of arranging the semiconductor-based light sources 30 - # as an integrated bare-die arrangement on the first sub-substrate 20-1, wherein the semiconductor-based light sources 30-# may optionally have integrated collimation lenses.
  • semiconductor-based light sources 30-# e.g. B. LEDs or laser diodes for an RGB transmission radiation 32
  • the method 100 further comprises a step 130 of arranging the semiconductor-based light sources 30 - # as an integrated bare-die arrangement on the first sub-substrate 20-1, wherein the semiconductor-based light sources 30-# may optionally have integrated collimation lenses.
  • the semiconductor-based light sources 30-# can be arranged directly on the first partial substrate 20-1 (carrier substrate) without a submount, for example (step 132).
  • an optically effective coating 56, z. an anti-reflection coating, etc. may be placed on the coupling and/or coupling-out surface 52 of the prism assembly (step 134).
  • the prism arrangement and the MEMS mirror arrangement 60 can be arranged geometrically in relation to one another (step 136) in such a way that the (common) optical axis 54 of the emitted transmission radiation 32 of the optoelectronic component 30 passes through the center point of the mirror element or the mirror gel plate 62 runs.
  • the prism arrangement 50 and the MEMS mirror arrangement 60 can be arranged geometrically relative to one another (step 138) such that the emitted transmission radiation 32 of the optoelectronic component 30 is arranged rotationally symmetrically around the center point of the mirror plate 62.
  • the lens arrangement 40 can be fixed in a defined focal position with respect to the gas-tight cover element 38 by means of a lens holder structure 42 as part of a holding structure 44 (step 140), the prism arrangement 50 being attached to/on the frame structure 44 with the lens holder structure 42 is arranged and the frame structure 44 with peripheral walls 44-1 forms a (at least) optically closed frame structure 44 to the outside.
  • the lens arrangement 40 can serve to compensate for the deflection of the transmission radiation 32 caused additionally by the dome-shaped or dome-shaped glass cap 70 .
  • the lens holder structure 42 within the frame structure 44 is designed, for example, in such a way that the focus position of the respective collimation lens or an integrated multiple lens 40 can be changed by vertical displacement and fixed in a specific focus position.
  • the lens arrangement 40 can be fixed or glued to the gas-tight cover element 38 in the defined focal position (step 142), the prism arrangement 50 being arranged firmly on the first partial substrate or carrier substrate 20-1 by means of the frame structure will.
  • the mirror element 62 can be arranged in a tilted or tilted state in the direction of the prism arrangement 50 (step 146).
  • the mirror element 62 can therefore be arranged with a preferred inclination in relation to the prism arrangement 50 .
  • the mirror arrangement can be placed and fixed, for example, on a wedge 24 in order to obtain the inclined, pre-tilted structure of the mirror arrangement 60 in the direction of the prism arrangement 50 .
  • the first and second sub-substrates 20-1, 20-2 can be firmly coupled to one another (step 148). This can be done, for example, by directly flanging on the first and second partial substrates 20-1, 20-2. It is thus possible for the MEMS mirror arrangement 60 to be decoupled from the light source and to be constructed on its own substrate (partial substrate 20-2).
  • a dome-shaped or dome-shaped glass cap 70 can be hermetically joined to the second partial substrate 20-2 (step 150) in order to create a hermetically sealed housing, e.g. B. for hermetic shielding and / or Ver encapsulation) for the MEMS mirror assembly 60 to form the ambient atmosphere.
  • an optically effective coating 72 e.g. e.g., an anti-reflective coating, etc.
  • the optically effective coating 72 can be applied, for example, at least to the beam passage surfaces of the dome-shaped glass cap 70 .
  • a reactive atmosphere can be arranged in the hermetically sealed housing for the optoelectronic component 30 with exclusively organic substances (step 154).
  • the hermetically sealed housing for the optoelectronic component 30 can also be hermetically sealed against the ingress of water vapor.
  • FIG. 10 now shows an exemplary flowchart or flow chart 200 for the production of gas-tight cover elements 38 according to a further exemplary embodiment.
  • the cover substrate 90 is bonded to the mold substrate 80 to form a sealed cavity 84 between the cover substrate 90 and the mold substrate 80 via the recess 82.
  • the cap substrate 90 and the mold substrate 80 are annealed to reduce the viscosity of the glass material of the cap substrate 90, further providing a positive pressure in the sealed cavity 84 relative to the ambient atmosphere to reduce the viscosity based on the reduced viscosity of the glass material of the cap sub strats 90 and the overpressure in the closed cavity 84 compared to the surrounding atmosphere, a defined bulging of the glass material of the cover substrate 90 starting from the closed cavity 84 to a stop surface 94 - 1 spaced apart from the cover substrate, in order to obtain a shaped cover substrate 90 with at least one cover element 38 .
  • the stop member 94 and the molded substrate 80 are removed from the molded cover substrate 90 , the molded cover substrate 90 forming the cover substrate with the at least one cover member 38 .
  • the cover substrate 90 has a stiffening structure 92 on the first or second main surface area 90-1, 90-2 of the cover substrate 90, wherein in the step 220 of arranging the cover substrate 90 on the structured surface area 80-1 of the mold substrate 80 placing the cover substrate 90 with the reinforcement member 92 in alignment on the patterned surface area 80-1 of the mold substrate 80 to place the reinforcement member 92 on the cover substrate 90 in an aligned position with the patterned surface area 80-1 of the mold substrate 80.
  • the cover substrate has two opposing stiffening structures 92 which are arranged on the cover substrate 90 on opposite side surfaces 90-1, 90-2 of the cover substrate 90 and opposite one another at a position so that in the step 220 of arranging of the cover substrate 90 on the structured surface area 80-1 of the mold substrate 80 to arrange the cover substrate 90 in alignment on the structured surface area 80-1 of the mold substrate 80 in order to position the reinforcement element 92 facing the mold substrate 80 in an aligned position with the structured surface area of the mold substrate 80 to arrange.
  • the method further comprises the steps of: removing the stiffening structure or stiffening structures 92 from the formed cover substrate 90 after the step of annealing and providing an overpressure, and/or singulating the formed cover substrate to obtain singulated cover elements 38 .
  • FIG. 10 uses the exemplary flowchart 200 to show the production of a cover substrate, for example for housing one or a plurality of optical or optoelectronic components can be used, with the cover substrate provided having the cover element or cover element 38 with the optically transparent window region 38-3 for the transmission radiation.
  • a mold substrate 80 e.g. B. a semiconductor or silicon wafer, provided with a structured surface area 80-1, that is, the mold substrate 80 is provided with at least one depression or recess 82.
  • the cover substrate 90 e.g. B. a glass wafer provided.
  • the cover substrate 90 further includes at the first and second major surface regions 90-1, 90-2 thereof, respectively opposite reinforcing members 92 aligned with one another.
  • the reinforcement members 92 are arranged in pairs opposite each other on the first and second main surface areas 90-1, 90-2 of the cover substrate 90, for example.
  • the reinforcement elements 92 on the opposite main surface areas 90-1, 90-2 of the covering substrate 90 are arranged, for example, congruently or overlapping one another with regard to a vertical projection.
  • the mold substrate 80 can be embodied as a semiconductor substrate (semiconductor wafer or silicon wafer) and the covering substrate 90 can be embodied as a glass substrate or glass wafer.
  • Molded substrate 80 is, for example, a molded substrate having a shape, contour, or topography such as a B. a topographically structured substrate.
  • the mold substrate 80 can be used, for example, as a semiconductor wafer, e.g. B. a silicon wafer, be formed, the surface structuring or topography of the mold substrate processing steps by means of Halbleiterbearbei or silicon processing steps can be obtained extremely precisely.
  • Fer ner can also mechanical surface treatment methods such. e.g. CNC milling, can be used to form the structure in the mold substrate 80.
  • Kings nen in addition to semiconductor materials such. B. Si, SiGe, for example, other materials such. AlN, SiC, refractory glass (e.g.
  • the cover substrate 90 has, for example, a (single) homogeneous material or glass material, in order to form the shaped cover substrate 90 as a cover substrate or glass cap with the individual cover elements 38 therefrom with the following production steps.
  • the cover substrate 90 is also aligned on the structured Oberflä chen Scheme 80-1 of the mold substrate 80 arranged to elements 92, z. B. silicon reinforcement elements, the cover substrate 90 in a directed or predetermined position with the structured surface area 80-1 of the mold substrate 80 to be arranged.
  • the second main surface area 90-2 of the covering substrate 90 which is in contact with the mold substrate 80, ie the raised areas of the structured surface area 80-1 of the mold substrate 80, can be planar and thus without recesses or indentations be trained.
  • the reinforcing elements on the second main surface area 90-2 of the cover substrate 90 are respectively arranged within the depressions 82 of the mold substrate 80, that is, between the raised areas of the structured surface area 80-1 of the mold substrate 80.
  • the cover substrate 90 is then connected to the mold substrate 80, e.g. B. hermetically connected by anodic bonding to at least one sealed cavity 84 between the cover substrate 90 and the mold substrate 80 to form.
  • the indentation 82 arranged in the mold substrate 80 or the indentations 82 arranged in the mold substrate 80 then form the at least one closed cavity 84 between the cover substrate 90 and the mold substrate 80.
  • the hermetic connection 220 of the cover substrate 90 to the mold substrate 80 is carried out in an atmosphere with a defined atmospheric negative pressure in order to enclose a defined atmospheric pressure in the sealed cavities 84 .
  • the glass wafer 90 is aligned with the mold substrate 10 and, for example, anodically bonded in a defined atmosphere in order to include a (defined) gas pressure in the cavities and channel structures 84 .
  • the cap substrate 90 and/or the mold substrate 10 are configured to form the closed cavity 84 with a plurality of closed cavity areas 84 between the cover substrate 90 and the mold substrate 10, wherein the closed cavity areas 84 are fluidly separated from each other or wherein there are also gas exchange channels 84-1 between the cavity regions 84, which are closed off from the ambient atmosphere, in order to fluidly connect them to one another in order to obtain a common, defined atmospheric pressure in the connected cavity regions 84.
  • step 230 the cover substrate 90 and the mold substrate 10 are then tempered, that is, subjected to a temperature treatment or heated (heated) in order to reduce the viscosity of the glass material of the cover substrate 90. Furthermore, in step 130, an overpressure is provided in the (at least one) closed cavity or the closed cavity areas 84 compared to the surrounding atmosphere in order to, based on the reduced viscosity of the glass material of the cover substrate 90 and the overpressure in the closed cavity 84 a defined bulging compared to the surrounding atmosphere, e.g. B.
  • the glass material of the cover substrate 90 starting from the closed cavity 84 can also be referred to as blowing out or deforming the glass material.
  • the Step 230 of annealing in a temperature range above 650°C, e.g. B. be carried out between 650 ° C and 955 ° C or between 650 ° C and 750 ° C.
  • the cover substrate 90 is bulged or blown out to a height h (minus the thickness of the reinforcement elements 92) in the step of tempering and the provision of an overpressure 32 in the region of the closed cavity 84, the height h by the vertical Ab was the stop surface 94-1 of the stop 94 to the first main surface area 90-1 of the cover substrate 90 is predetermined.
  • the area of stop surface 94-1 of stop element 94 that is opposite cavity 84 or cavity areas 84 is flat and parallel to main surface area 90-1 of cover element 90, so that in step 230 of the annealing and the Providing an overpressure to form a flat top area 38 - 3 of the cover element 38 .
  • the region of the stop surface 94-1 of the stop element 94 opposite the cavity 84 or the cavity regions 84 can also be inclined (locally inclined) with respect to the main surface region 90-1 of the cover substrate 90 in order to be inclined in step 130 to form a sloping ceiling area 38 - 3 of the cover element 38 .
  • the stop element 94 can be designed as a reusable tool and have a non-stick coating 94 - 1 (as or on the stop surface 94 - 1 ) for the glass material of the cover substrate 90 .
  • the glass flow process 230 can thus be carried out in a pressure-controlled furnace 96.
  • the stop element 90, the molded substrate 80 and the reinforcing elements 92 are now removed from the molded cover substrate 94 in a subsequent step 240, the molded cover substrate now being removed 90 forms the cover substrate with the at least one cover element or cover element 38 .
  • the cover substrate 90 can e.g. B. for housing one or a plurality of opti's or optoelectronic components 30 are used.
  • the step 240 of removing the stop element 94, the mold substrate 80 and the reinforcement elements 92 can be carried out by means of an etching process, e.g. B.
  • the stop element 94 is not designed as a reusable tool, the stop element 94 can also be removed by means of a semiconductor etching process.
  • the cover substrate 90 is a single homogeneous material, e.g. a glass material
  • the molded cover substrate 94' is also unitary (in one piece) and made of a single homogeneous material, e.g. B. the Glasma material formed.
  • the process flow 200 can further refer to the application or deposition of a metallization 86 as a (continuous) frame structure or as a sealing frame on the second main surface area on the non-bulged areas (base areas) 38-2 of the cap members 38 of the molded cap substrate (the cap substrate) 94'.
  • an anti-reflective coating 88 may be applied to an inside and/or outside region, e.g. B. the radiation exit area or the ceiling area 38-3, of the cover element 38 of the formed cover substrate 94' can be applied or deposited.
  • the sealing frame 86 and/or the optional anti-reflection coating(s) 88 can be deposited onto the cover substrate 94'.
  • This glass cover substrate 94' can then be used to hermetically seal optical assemblies at the wafer level.
  • the process flow 200 may further include singulating the formed cover substrate 94' to obtain singulated cover elements or lid elements 38.
  • FIG. The singulation 260 of the glass cover substrate 94′ can take place, for example, by sawing or laser cutting. With the isolated cover elements 38, optical assemblies can be hermetically sealed at the individual substrate level or at the wafer level by individual encapsulation.
  • the manufacturing method 200 according to the invention from FIG. 10 makes it possible for an improved housed radiation-emitting component to be manufactured particularly advantageously at the wafer level. If a mold substrate 80 is used to shape cover substrates 90 by means of a glass flow process, optically flat glass covers 38 can be produced with the aid of stiffening structures 92, with which sensitive radiation sources 30 can then be hermetically sealed.
  • the method 200 according to the invention for the production of optical components has, for example, the following method steps:
  • the two substrate sides 90-1, 90-2 of the first Substrate 90 or their surfaces, which are the starting surfaces z. B. for an optical window or its T ransmissions vom 38-3 preferably be executed polished.
  • the two substrate sides 90-1, 90-2 preferably have a square surface roughness of less than or equal to 25 nm, preferably less than or equal to 15 nm, particularly preferably less than or equal to 5 nm.
  • the surfaces of an optical window 38-3 through which the radiation 32 used in the application impinges into the optical window and/or is coupled out again represent the transmission surfaces of an optical window 38-3.
  • the two substrate sides 90 - 1 , 90 - 2 of the first substrate 90 are designed to be flat (planar) and/or plane-parallel to one another.
  • the two substrate sides 90-1, 90-2 of the first substrate 90 preferably have a flatness deviation of less than a quarter of the wavelength of the electromagnetic radiation 32 used in the application, wavelengths from the ultraviolet to the infrared wavelength range being particularly preferred (e.g. between about 200 nm and about 15 pm) apply.
  • flatness deviation values of less than 180 nm are advantageous for longer-wave light, for example with a wavelength of 720 nm.
  • the demands on the substrate sides increase, so that values for the flatness deviation of less than 110 nm are preferred.
  • the plane-parallelism deviation of the two substrate sides of the first substrate has values of less than 10 ⁇ m, for example.
  • the first substrate 90 offers very good prerequisites for an optical component that causes, for example, smaller deviations and a smaller beam expansion of the optical beam path 32, which leads to less falsification of the optical signals.
  • the first substrate 90 can have a homogeneous material structure, for example, in order to avoid undesired refractions and/or deflections of the radiation 32 by the optical component produced from the first substrate 90 .
  • the first substrate 90 contains glass and/or a glass-like material, for example, at least in some areas, or the first substrate 90 consists of glass and/or a glass-like material.
  • glass-like materials are substances which, because of their thermodynamic properties (amorphous structure, glass transition temperature), are similar to glasses, although their chemical composition differs from that of silicate glasses. Examples are the artificial glasses or organic vitrodes known in chemistry, such as polymethyl methacrylate (PMMA), polycarbonate and polystyrene.
  • Preferred glasses are, for example, silicate glasses, in particular borosilicate glasses, since borosilicate glasses are very resistant to chemicals and temperatures.
  • the temperature resistance and insensitivity of borosilicate glasses to sudden temperature fluctuations are a result of their low coefficient of thermal expansion.
  • the degree of transmission is very high at over 90%, particularly in the wavelength range visible to humans.
  • the second substrate 80 preferably contains a semiconducting material, at least in partial areas, or the second substrate 80 consists of a semiconducting material.
  • Semiconductor wafers in particular, preferably silicon wafers are used as the second substrate, as a result of which the mature and easily controllable processes of semiconductor technology, in particular silicon technology, can be replaced.
  • At least one reinforcement element 92 is provided, for example by separating it from a reinforcement substrate 92, the reinforcement substrate preferably being designed as a plate or wafer, in particular as a silicon or glass wafer.
  • the reinforcement substrate preferably being designed as a plate or wafer, in particular as a silicon or glass wafer.
  • the reinforcement substrate and/or the at least one reinforcement element 92 consists of or contains a semiconducting material at least in partial areas.
  • a semiconducting material is silicon, since when it is used the mature and easily controllable processes of semiconductor technology, in particular silicon technology, can be used.
  • glasses that have a higher melting point than the first substrate 90 e.g. high-melting glasses
  • Exemplary materials for the reinforcement elements 92 and/or the reinforcement substrate 92 have a thermal expansion coefficient that is as close as possible to the thermal expansion coefficient of the material of the first substrate 90 or is as identical as possible to it.
  • the difference in thermal expansion coefficients should be less than or equal to 5 ppm/°K, or less than or equal to 1 ppm/°K.
  • the reinforcement element 92 can be provided in various ways.
  • the reinforcement member 92 can be manufactured by separating or separating from the reinforcement substrate 92 .
  • Preferred separation methods are sawing, laser cutting or laser processing, breaking (possibly with prior scoring) and/or etching.
  • the reinforcing element is produced, for example, by etching a layer deposited on the first substrate, so that comparatively little material removal can be obtained.
  • the reinforcing substrate 92 and thus the starting material for the reinforcing element 92 can be used much more effectively by a manufacturing process that takes place before the arrangement of the reinforcing element 92 , for example by sawing, laser cutting, breaking or etching. This and the associated savings in further process steps, such as eg paint application, exposure, paint structuring, paint removal, the production costs can be reduced.
  • the production of the reinforcement elements 92 before the arrangement also has the effect that the reinforcement elements 92 can be made of different materials (e.g. from several reinforcement substrates) and with different sizes (e.g. thickness) or shapes as well as with different properties (e.g. with regard to transparency, reflectivity or absorpti on behavior) can be provided for the subsequent arrangement step.
  • This enables an optimized and flexible adaptation of production to the desired specifications.
  • the area of the first substrate 90 that is not in contact or brought into contact with the reinforcement element 92 is exposed to a lesser extent to aggressive media such as etching solutions, so that this area is subsequent contacting and/or connection steps can be better preserved or as a result of which the high surface properties of this area, for example, can be better preserved.
  • the gain elements 92 may be arrayed from a single substrate 92 .
  • This substrate 92 is made by the established methods such as lithography and etching.
  • this substrate 92 can have or consist of a material that can be connected to the first substrate 90 without changing its optical properties. Separated reinforcing elements 92 can be produced on the first substrate 90 by grinding back the reinforcing element substrate 92 .
  • a high surface quality (e.g. low roughness, low flatness deviation) of the reinforcing element can preserve a high surface quality of the first substrate or the high surface quality of the reinforcing element can be transferred to the first substrate in the course of heating and forming in order to achieve a high surface quality for the products to be produced to ensure optical component. Furthermore, by arranging, in particular applying, the at least one reinforcement element on the first substrate, a stack is produced, as a result of which the reinforcement element covers or covers a region of the first substrate. In the rim ends, this stack of first substrate and reinforcement element is referred to as "base stack".
  • first layer 90, a first area or a first device is “arranged or applied on a second layer 80, a second area or a second device can mean here and in the rim end that the first layer 90, the first Region 80 or the first device is arranged or applied directly in direct mechanical and/or electrical contact on the second layer 80, the second region or the second device.
  • an indirect contact can also be referred to, in which further layers, areas and/or devices are arranged between the first layer, the first area or the first device 90 and the second layer, the second area or the second device 80 .
  • the reinforcement element 92 can be arranged on the first substrate 90, for example, with a vacuum handler (vacuum suction cup), a gripper (collet) or a pick-up tool (combination of vacuum suction cup and gripper), which enables the reinforcement element 92 to be arranged with precise positioning the first substrate 90 ensure. In the case of an entire substrate, the adjustment is carried out using a so-called aligner. In this case, the reinforcing element 92 is arranged or applied on the first substrate 90 in such a way that deformation of the region of the first substrate 90 that functions, for example, as an optical window (38-3) is reduced or prevented.
  • this covered area of the first substrate 90 extends to the area of the first substrate 90 that is between or on the contact surface or boundary surface that is between the reinforcement element 92 and the first substrate 90, and the parallel projection of this contact surface lies on the opposite substrate side 90-1, 90-2 of the first substrate 90, the connection vector between a point on the contact surface and its image on the opposite substrate side of the first substrate 90 lying parallel to the resulting normal vector of the contact surface, the resulting Normal vector of the contact surface is determined by vector addition of the normal unit vectors of the infinitesimal partial surfaces of the contact surface, which point in the direction of the first substrate 90 .
  • the surface areas of the first substrate 90 that have points in common with the contact surface or its image belong to the covered area of the first substrate 90.
  • the definition of the covered area of the first substrate 90 is based on a stack (base stack/further base stack) as it is before the deformation according to the present exemplary embodiments of the first substrate 90 .
  • the extra stuff of the reinforcement member 92 stabilizes and protects the covered area of the first substrate 90 and resists deformation.
  • the high level of flatness, plane parallelism and low surface roughness that is present, for example, in the first substrate 90 provided can be maintained, which is the basis for high-quality optical components 38, and also surfaces, such as transmission surfaces, which require subsequent processing (for example a polishing step ) are not accessible, with a high surface quality.
  • the first substrate 92 and the reinforcement element 90 are connected to one another, for example, in a form-fitting manner and/or with a material bond, such as by gluing, soldering or bonding, in order to ensure high positional stability of the reinforcement element 92 the first substrate 90 to ensure.
  • the reinforcement element 92 is expediently arranged on the first substrate 90 in such a way that displacement and/or twisting of the reinforcement element 92 in relation to the first substrate 90 is reduced or prevented.
  • the at least one reinforcing element 92 for example a silicon chip, is arranged on or connected to the first substrate 90 by anodic bonding, direct bonding, plasma-activated bonding and/or thermal bonding.
  • these bonding methods are frequently used connection techniques that lead to stable connections.
  • Such a connection step, such as bonding preferably takes place in a vacuum, which avoids air pockets and/or trapped particles in the connection areas, in particular at the interface between reinforcement element 92 and first substrate 90, and the resulting defects on the surface of the first Substrate 90 and thus reduced to the surface of the optical component.
  • the at least one reinforcement element 92 is placed on a positioning means prior to being placed on the first substrate 90 .
  • the positioning means can be equipped with the reinforcement element 92, i.e. the transfer and arrangement of the reinforcement element, for example with a vacuum handler (vacuum suction cup), a gripper (collet) or a pick-up tool (combination of vacuum suction cup and gripper), which ensures a precisely positioned and ensure precise assembly on the positioning means. All means, devices and tools that stabilize or keep the reinforcing element 92 in its position are suitable as positioning means. This stabilization makes the handling of the reinforcement element 92 much easier with regard to the further process steps. For example, assembly under clean room conditions at atmospheric air pressure and a subsequent connection step, eg anodic bonding, can take place in another clean room area in a vacuum.
  • Suitable positioning means are, for example, adhesive bases based on magnetic or electrostatic forces or substrates that can ensure non-positive (friction-increasing layer), material-to-material (e.g. applied adhesive layer) or form-fitting connections (e.g. indentations or recesses).
  • the positioning means is designed to be electrically conductive, for example.
  • the positioning means contains or consists of electrically conductive and/or semiconductive materials such as silicon, for example.
  • a receiving substrate can be used as an exemplary positioning means.
  • Such a receiving substrate has at least one recess or indentation (receiving indentation) which is designed to receive the reinforcement element 92 and keeps it fixed or adjusted laterally in particular.
  • the receiving substrate can be easily removed after the reinforcing element 92 has been arranged on the first substrate 90 by breaking the positive connection. to release the base stack thus produced from the first substrate 90 and reinforcement element 92 for further process steps.
  • the recording substrate can then be reused for the next assembly process and can thus be replaced several times, which in turn reduces the manufacturing effort and the manufacturing costs.
  • the receiving recess is preferably designed in such a way that at least one of the reinforcement elements 92 protrudes beyond the boundary surfaces of the receiving substrate after it has been arranged on the receiving substrate. For example, all reinforcement elements 92 protrude beyond the boundary surfaces of the receiving substrate after they have been arranged on the receiving substrate.
  • the at least one reinforcement element can preferably have at least one fixing element or be in a mutually active relationship with at least one fixing element (eg mechanical, electrostatic and/or magnetic force coupling).
  • the fixing element reduces or prevents, for example after the base stack has been brought into contact with the at least one second substrate 80, displacement and/or twisting of the reinforcing element relative to the first substrate 90 and thus increases the positional stability of the reinforcing element 92.
  • the reinforcing element 92 and the fixing element are stationary connected to each other mechanically in order to be able to ensure the most stable possible force coupling.
  • the fixing element is clamped between the base stack and the second substrate 80 in the method step of bringing the base stack into contact with the second substrate 80 .
  • suitable receiving grooves for example in the second substrate 80
  • an expedient contact between the base stack and the second substrate 80 can be guaranteed despite the interposed or clamped fixing element.
  • at least part of the fixing element is in contact or connected to an area of the first substrate 90 which, after the base stack has been brought into contact with the second substrate 80, is outside the deflection area or in the support area. Since this area of the first substrate 90 is not subject to deflection or deformation, it promotes improved force absorption and thus increased positional stability of the reinforcement element 92.
  • the fixing element is produced during the manufacture of the reinforcement element 92, which saves additional production steps .
  • one or more support structures are created, with the support structure being created in such a way that the support structure protects the support area, in particular the support surface, of the first substrate 90 and/or acts as a spacer between the first substrate 90 and the second substrate 80 functions.
  • the support area is the area of the first substrate 90 which does not experience any deflection, in particular not as a result of deformation, or as a result of the second substrate Substrate 80 is supported directly or indirectly. Direct support occurs when the first substrate 90 and the second substrate 80 are brought into contact with one another. In the case of indirect support, for example, one or more layers or layer sequences are arranged between the first substrate 90 and the second substrate 80 .
  • the bearing surface is the surface of the bearing area that faces the second substrate 80 .
  • the supporting surface of the first substrate 90 forms the contact surface of the cover and thus the surface of the cover which is provided for the contact or the connection of the cover to the carrier substrate.
  • the contact surface of the cover and/or the surface of the first substrate opposite the contact surface on the other side of the substrate are preferably in at least one of the substrate planes of the first substrate 90. Accordingly, after the cover 38 has been connected to the carrier substrate 20, the carrier substrate plane and the Substrate levels of the first substrate 90, for example, arranged in parallel.
  • the high surface quality of first substrate 90 for example, can be preserved or one or more high-quality surface areas of the overlay structure can be molded onto first substrate 90 during method step 230 of heating and shaping, and thus one or several bearing areas, such as bearing surfaces and thus potential contact surfaces of the optical component 38 to be produced, can be realized with a high surface quality.
  • Such high-quality surface areas with, for example, low roughness and high flatness enable the use of sophisticated connection techniques, such as anodic bonding, with which stable connections between the optical component 38, for example a cover, and the carrier substrate 20 can be produced.
  • At least one reinforcement element 92 is arranged on each of the two substrate sides of the first substrate 90, with opposing reinforcement elements 92 for example at least partially overlapping.
  • such reinforcing elements 92 completely overlap.
  • the areas of the first substrate 90 covered by them are (particularly) well stabilized and protected from deformation.
  • the reinforcement elements 92 are arranged on the first substrate 90 in such a way that no tilting of the area of the first substrate 90 covered by this reinforcement element 92 is promoted during heating and deformation (step 230). This is achieved, for example, in that both reinforcement elements 92 are arranged centrally in the deflection area of the first substrate 90 .
  • a deflection area can be divided into the area of the first substrate 90 covered by the reinforcement element 92 and the deformation area of the first substrate 90.
  • the deformation area in turn represents the area of the first substrate 90 which, due to its change in shape, causes a deflection out of the plane, of the area of the first substrate 90 covered by the reinforcing member 92 is ensured.
  • a central arrangement of a reinforcement element 92 in the deflection area is understood in the sense of the exemplary embodiments that the spacing of the reinforcement element 92 from all directions on the adjoining support areas is, for example, the same size.
  • the distance between the point of application of the resulting force and the contact areas adjacent to the deflection area is the same in all directions. If the resultant force on a reinforcement element 92 is not centric, the distance between the point of attack and the edges of the reinforcement element 92 is not the same in at least one direction.
  • the base stack 90, 92 is brought into contact with the second substrate 80.
  • the base stack 90 , 92 is brought into contact with the second substrate 80 , for example, in such a way that a depression 82 formed in the second substrate 80 forms a cavity 84 between the second substrate 80 and the base stack 90 , 92 .
  • the cavity 84 may prevent direct contact between the deflection portion of the first substrate 90 and the second substrate 80 prior to heating and deformation (at step 230). Such contact could lead to the deflection region of the first substrate 90 adhering to the second substrate 80, e.g. also indirectly through the reinforcement element 92 arranged on the first substrate 90 adhering to the second substrate 80, and prevent or prevent deformation-related deflection of the first substrate 90 in the deflection region make more difficult.
  • a pressure below or above the ambient pressure in particular the atmospheric air pressure
  • a pressure generated in the cavity 84 which is under half or above the ambient pressure generate forces to favor the deformation process.
  • a pressure below or above the ambient pressure in particular the atmospheric air pressure, can be generated in the cavity 84 .
  • a pressure generated in the cavity 84 which is below or above the ambient pressure can thus be used to generate force effects to promote the deformation process.
  • the second substrate 80 should be bonded to the base stack 90, 92 (see step 220). This makes it possible, for example, to produce a cavity 84 between the base stack 90, 92 and the second substrate 80 that is hermetically sealed off from the environment. By performing the bonding process 220 at specific pressures, specific pressure levels in the cavities 84 can be created.
  • the subsequent heating process typically takes place at significantly higher temperatures than the preceding joining process (step 220).
  • the flow properties of the first substrate 90 such as those present in particular near and above the softening point (softening point) and/or the melting temperature, are utilized.
  • the effect of this type of shaping which is also referred to as glass flow, compared to other shaping or embossing processes, such as glass deep drawing or glass embossing (e.g. blank pressing), consists primarily in the fact that optical components, for example with substrate or wafer expansion ments, such as substrate or wafer diameters greater than or equal to 80 mm, and e.g. greater than or equal to 150 mm, or e.g. greater than or equal to 300 mm, with high surface quality, low surface roughness, high surface evenness and high plane-parallelism of the surfaces of the substrate sides.
  • the base stack 90, 92 can be pushed out of the plane or pulled in.
  • a pressure is trapped in the cavity 84 that is higher than the ambient pressure during processing.
  • a pressure difference between the two substrate sides of the first substrate 90, such as in the area of deflection, is caused, so that the base stack 90, 92 is pressed out of the plane.
  • the level is determined by setting an optimal ratio of the enclosed pressure in the cavity and the pressure in the process environment. As in the case of the ideal gas equation, the pressures are adjusted in such a way that they are approximately the same in the cavity and in the process environment when the desired blow-out height of the base stack 90, 92 is reached.
  • deflection limiter 94 which limits the maximum desired deflection caused by deformation.
  • Substrates that are temperature-stable above the softening temperature of the glass can be used as the deflection limiter 94 .
  • the deflection limiter 94 can be used multiple times.
  • the distance height H is set by spacers (the description of the spacers is actually optional).
  • a pressure that is lower than the ambient pressure during processing is enclosed in the cavity.
  • a pressure difference is established between the two substrate sides of the first substrate 90, e.g. in the deflection area, so that the base stack 90, 92 is pressed into the cavity.
  • the underside of the cavity 84 acts as a boundary.
  • the reinforcing elements 92 and the second substrate 80 are completely removed (step 240).
  • parts of the reinforcement element 92 or the further reinforcement element 92 for example as a frame-shaped stabilization structure or screen structure, remain on the first substrate 90 or the finished optical component 38.
  • the finished glass wafer 90 can be joined as a whole to the substrate wafer with a component.
  • a further possibility would be to separate the glass wafer 90' and to mount it on the component substrate wafer using a so-called pick-and-place assembly tool.
  • at least partial areas of the first substrate 90 are provided with at least one finishing coating 88, for example with an anti-reflection coating, an antistatic coating, a reflective coating and/or an absorption coating, and/or functional surface structures, whereby the functionality of the optical component 38 can be improved.
  • Refining coatings 88 used by way of example are anti-reflection coatings which, for example, further reduce reflections on a cover 38, in particular on its optical windows 38-3, and thus further reduce radiation losses.
  • antireflection coatings 88 can be realized, for example, by layer systems made of magnesium fluoride and titanium oxide, or silicon dioxide and titanium oxide.
  • antistatic coatings for example, which minimize electrical charging of the optical component, are used.
  • a material suitable for antistatic coatings in optical applications is ITO (indium tin oxide) because it has high electrical conductivity when doped and has high transparency over a wide range of wavelengths.
  • Sealing frames 86 can be applied to glass cap wafers 90 by a variety of methods.
  • vapor-deposited metallizations with shadow masks preferably designed as frame structures or as a metal surface with cutouts for the optical windows 38-3.
  • a sputtered metal layer or galvanic deposition on a base metallization can also be considered.
  • a printed and pre-tempered glass frit can be provided as such a frame or continuous coating with recesses for the optical windows.
  • FIG. 11 now shows a further exemplary flowchart or flow chart 300 for the production of gas-tight cover elements 38 according to a further exemplary embodiment.
  • Fig. 11 uses the exemplary flow chart 300 to show the production of a cover substrate, which can be used, for example, to house one or a plurality of optical or optoelectronic components 30, the cover substrate produced having the gas-tight cover element or cover element 38 with the optically the transmission radiation has a transparent window area 38-3.
  • a mold substrate 80 e.g. B. a semiconductor or silicon wafer, provided with a structured surface area 80-1, that is, the Mold substrate is provided with at least one recess 82 .
  • the United depressions or recesses 82 can also be formed continuously (as perforations).
  • a cover substrate 90 e.g. B. a glass wafer provided.
  • the mold substrate 80 can therefore be in the form of a semiconductor substrate (semiconductor wafer or silicon wafer) and the covering substrate 90 can be in the form of a glass substrate or glass wafer.
  • the cover substrate 90 is arranged on the structured surface area 80-1 of the mold substrate 80 and connected or joined to the mold substrate, e.g. B. hermetically connected by anodic bonding. That is, the planar glass substrate 90 is anodically bonded to the mold substrate 80 .
  • the mold substrate 80 (e.g., silicon mold substrate) is opened by a grinding process, for example, to open the cavities 84 on the underside.
  • the opening of the mold substrate 80 can also be performed by means of an etching process.
  • an anti-reflection coating 88 can also be applied to an inside and/or outside area, e.g. B. the beam exit area or the De cken Scheme 38-3, the cover element 38 are applied or deposited.
  • the present cover substrate (glass-silicon cover substrate) with the at least one cover element or cover element 38 can now be used to house one or a plurality of optical or optoelectronic components 30 (optical assemblies) at the wafer level.
  • the process flow 300 can also include dicing the cover substrate 80, 90 in order to obtain separated cover elements or cover elements 38.
  • the separating 340 of the glass-silicon cover 80, 90 can take place, for example, by sawing or laser cutting.
  • optical structures such. B. optical transmitting and / or receiving elements, are hermetically sealed or capped at the individual substrate level or at the wafer level by individual capping.
  • the cover element 38 can also be designed as a multi-cavity cover element (glass-silicon cover) 38 by means of a separating element 38-4.
  • the formation of multi-cavities 38-A, 38-B in one Cover element 38 enable, for example, an optical channel separation and, if necessary, a separation of the atmospheres in the individual cavities 38-A, 38-B.
  • FIG. 12 now shows a further exemplary flowchart or flow chart 400 for the production of gas-tight cover elements 38 according to a further exemplary embodiment.
  • a second major surface portion 91-2 of the cap substrate 91 is bonded to a first major surface portion 81-1 of the mold substrate 81 to form cavities between the cap substrate 91 and the mold substrate 81 closed by the recesses 83.
  • the cover substrate 91 and the mold substrate 81 are annealed to reduce the viscosity of the glass material of the cover substrate 91 to cause the glass material to flow into the recesses 83 based on the reduced viscosity of the glass material of the cover substrate 91 to form a molded Cover substrate 91 with at least one cover element 38 to obtain.
  • the molding substrate 81 is removed from the molded cover substrate 90, the molded cover substrate 90 forming the lid substrate with the at least one lid member 38.
  • a negative pressure is created in the closed cavity 83 with respect to the surrounding atmosphere in order to support the flow or drawing of the glass material of the cover substrate 91 into the depressions 83 .
  • a negative pressure or vacuum is sealed in the closed cavity 83 during the bonding 425 in order to obtain a negative pressure in the closed cavity 83 with respect to the surrounding atmosphere during the annealing step 430 in order to prevent the glass material from flowing or being drawn in of the cover substrate 91 into the recesses 83.
  • the cover substrate 91 has a stiffening structure 92 on the first main surface region 91-1 of the cover substrate 91. wherein in the step 425 of placing the cover substrate 91 on the patterned surface area 81-1 of the mold substrate 81, the cover substrate 91 with the reinforcement element 92 aligned is placed on the patterned surface area 81-1 of the mold substrate 81 to attach the reinforcement element 92 to the cover substrate 91 in an aligned position between two indentations 83 of the mold substrate 81;
  • the method 40 further comprises the following steps: removing 435 the stiffening structure or stiffening structures 92 after the annealing step, and dicing 455 the formed cover substrate 91 in order to obtain diced cover elements 38 .
  • FIG. 12 uses the exemplary flowchart 400 to show the production of a cover substrate, which can be used, for example, to house one or a plurality of optical or optoelectronic components (transmitting and/or receiving components), with the cover substrate produced being the cover element or cover element 38 with the optically transparent for the transmission radiation 32 Fen art area 38-3.
  • a cover substrate which can be used, for example, to house one or a plurality of optical or optoelectronic components (transmitting and/or receiving components), with the cover substrate produced being the cover element or cover element 38 with the optically transparent for the transmission radiation 32 Fen art area 38-3.
  • a mold substrate 80' e.g. B. a semiconductor or silicon wafer, is provided with a structured surface area 80'-1, that is, the mold substrate 80' is provided with at least one or a plurality of raised structures 82'.
  • a planar glass substrate 91 is anodically bonded to the first mold substrate 80'.
  • the first silicon mold substrate is thinned, for example by a grinding process, in order to produce stiffening or reinforcing elements 92 on a glass substrate 90.
  • the stiffening elements 92 are provided, for example, to maintain a minimum surface roughness of the glass material of the cover substrate 91 in the glass flow process.
  • a second mold substrate 81 e.g. B. a semiconductor or silicon wafer, manufactured and provided with recessed structures 83 in a first main surface region 81-1.
  • the glass substrate 90 with the reinforcing members 92 is anodically bonded to the second mold substrate 81 (silicon mold substrate) with a vacuum sealed in the recesses 83.
  • the glass material of the glass substrate flows into the recesses or is drawn into the recesses 83 by the enclosed vacuum. Finally, the glass substrate is cooled and removed from the furnace 50.
  • the material of the mold substrate 81 (the second silicon mold substrate) and the silicon reinforcing elements 92, e.g. B. by means of an etching process removed.
  • a metallization and optionally an antireflection coating 86, 88 can be deposited on the inside and/or outside of the glass substrate 91.
  • the resulting glass substrate 91 that is, the prepared glass cap wafer 91, may be placed on a predetermined substrate wafer 20 to hermetically cap optoelectronic devices 30.
  • FIG. 1 A predetermined substrate wafer 20 to hermetically cap optoelectronic devices 30.
  • a hermetic joint connection between the cap wafer 91 and the equipped substrate wafer 20 is carried out.
  • the components 95 are singulated at the wafer level in order to obtain singulated optoelectronic transmitting and/or receiving components 95.
  • FIGS. 13a-b and 14a-b now show exemplary embodiments for a hermetically housed, optoelectronic component 95 according to further exemplary embodiments, which can be produced, for example, according to process flow 400 from FIG.
  • the hermetically housed, optoelectronic component 95 of FIG. 13a shows, for example, a wire-bonded photodetector 31 (wire-bonded photodetector), which is housed between the carrier substrate 20 and the (eg gas-tight) cover element 38 .
  • the cover element 38 can optionally be designed in such a way that the upper side wall 38-3 is designed to be optically transparent for the received radiation.
  • the optoelectronic component 95 has, for example, a radiation-sensitive semiconductor component 31, such as. B. an optoelectronic receiving component or a Fotodi ode on.
  • the hermetically housed optoelectronic component shown in FIG. 13b is in the form of a flip-chip LED, for example, and is housed (eg hermetically) between the carrier substrate and the cover element 38 .
  • the cover element 38 can optionally be designed in such a way that the upper side wall 38-3 is designed to be optically transparent for the transmission radiation.
  • the optoelec tronic component 95 has, for example, a radiation-emitting semiconductor construction element, such as. B. an optoelectronic transmission component.
  • optoelectronic component 95 from FIGS.
  • a number of LEDs of different wavelengths can be accommodated in the housing 38 , for example.
  • a circuit with zener diodes for reverse polarity protection can also be provided.
  • FIG. 14a now shows a further exemplary embodiment for a hermetically housed optoelectronic component 32 according to an exemplary embodiment which is produced, for example, using the method 400 described above.
  • the cover element 38 can optionally be designed in such a way that the upper side wall 38-3 is designed to be optically transparent for the transmission radiation.
  • the optoelec tronic component 95 has, for example, a radiation-emitting semiconductor construction element 30, such as. B. an optoelectronic transmission component, and a strahlungsemp-sensitive semiconductor component 31, such as. B. an optoelectronic receiving component or a photodiode on.
  • FIG. 14a thus shows an embodiment in which the optoelectronic components 30 are integrated under the cover element 38.
  • FIG. This is suitable, for example, for applications in which one or more additional photodiodes 31 are provided for monitoring the power of the radiation-emitting component 30, for example a laser.
  • the radiation reflected by an object 2 can be detected by the receiving element 31 .
  • FIG. 14a shows a driver EC with the transmission element 30 and a monitor photodiode 31 in the cavity.
  • the optoelectronic components 30, 31 shown in FIG. 14a can be contacted with a bonding wire with corresponding terminal areas on the substrate 20.
  • FIG. 14a shows a driver EC with the transmission element 30 and a monitor photodiode 31 in the cavity.
  • the optoelectronic components 30, 31 shown in FIG. 14a can be contacted with a bonding wire with corresponding terminal areas on the substrate 20.
  • FIG. 14b shows an illustration in which an optoelectronic transmission component is designed, for example, as a flip-chip component 30, the statements from FIG. 14a otherwise being equally applicable to the transmission component 30 from 14b.
  • active optical elements 30, 31 can have very small geometries in the hermetically housed, optoelectronic component 95 of FIGS.
  • Combinations of NIR-VCSEL elements 30 with a photodetector 31 in one housing can also be implemented, since a proximity sensor system can be operated with them, for example. There is therefore the emission of a light pulse with the transmission component 30 and the feedback of reflected radiation, which is measured with a photodiode 31 .
  • Some or all of the method steps may be performed by (or using) hardware apparatus, such as a programmable pick and place machine with integrated optical sensing, a microprocessor, a programmable computer, or electronic circuitry. In some embodiments, some or more of the method steps may be performed by such an apparatus. Depending on particular implementation requirements, embodiments of the invention may be implemented in hardware, or in software, or at least partially in hardware, or at least partially in software.

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  • Optical Couplings Of Light Guides (AREA)

Abstract

L'invention concerne un système de projection optique (10) qui comprend un premier module (10-1) disposé sur un premier substrat partiel étanche au gaz (20-1), un composant optoélectronique (30) étant disposé sur le premier substrat partiel (20-1), au moins une partie du rayonnement d'émission (32) du composant optoélectronique (30) présentant une direction de rayonnement principale dans une plage de ± 30° par rapport à une verticale du premier substrat partiel (20-1), un élément de recouvrement étanche aux gaz (38) qui est relié hermétiquement au premier substrat partiel (20-1) afin d'obtenir un boîtier hermétique pour le composant optoélectronique (30); l'élément de recouvrement (38) présentant, au moins dans la zone de la direction de rayonnement principale, un matériau transparent au rayonnement d'émission, un ensemble lentille (40) monté fixe par rapport à l'élément de recouvrement (38) pour la collimation du rayonnement d'émission (32) du composant optoélectronique (30), et un ensemble prisme (50) qui est conçu pour guider le rayonnement d'émission collimaté (32) du composant optoélectronique (30) et pour l'extraire au niveau d'une surface de sortie (52); et en outre un deuxième module (10-1) qui est disposé sur un deuxième substrat partiel (20-1), possédant un ensemble miroir MEMS (60) comprenant un élément de miroir à base de MEMS pouvant être dévié et suspendu de manière mobile (62), l'ensemble prisme (50) et l'ensemble miroir MEMS (60) étant disposés géométriquement l'un par rapport à l'autre de façon que le rayonnement d'émission (32) extrait atteigne l'élément de miroir à base de MEMS suspendu de manière mobile (62) à un angle d'incidence β (62), l'angle d'incidence (β) à l'état de repos de l'élément de miroir à base de MEMS (62) se situant dans une plage comprise entre 30° et 50°.
PCT/EP2022/066987 2021-06-23 2022-06-22 Dispositif de projection optique recouvert hermétiquement et procédé de production correspondant WO2022268870A2 (fr)

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EP22734955.2A EP4359845A2 (fr) 2021-06-23 2022-06-22 Dispositif de projection optique recouvert hermétiquement et procédé de production correspondant

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DE102021206477.9 2021-06-23
DE102021206477.9A DE102021206477B4 (de) 2021-06-23 2021-06-23 Hermetisch verkappte, optische Projektionsanordnung und Verfahren zum Herstellen derselben

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WO2022268870A2 true WO2022268870A2 (fr) 2022-12-29
WO2022268870A3 WO2022268870A3 (fr) 2023-03-23

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Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008003345A1 (de) * 2008-01-07 2009-07-09 Robert Bosch Gmbh Mikrospiegelvorrichtung und Herstellungsverfahren für eine Mikrospiegelvorrichtung
DE102008012384A1 (de) * 2008-03-04 2009-09-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Deckel für Mikro-Systeme und Verfahren zur Herstellung eines Deckels
JP5640420B2 (ja) 2009-05-29 2014-12-17 株式会社リコー 投影型画像表示装置
JP2014056199A (ja) * 2012-09-14 2014-03-27 Hitachi Media Electoronics Co Ltd 走査型投影装置
US20190121133A1 (en) * 2017-10-23 2019-04-25 North Inc. Free space multiple laser diode modules
US10714891B2 (en) * 2018-07-06 2020-07-14 Himax Technologies Limited Projector, electronic device having projector and associated manufacturing method
EP4294767A1 (fr) * 2021-02-19 2023-12-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Procédé de production d'un substrat de couverture, procédé de production d'un composant optoélectronique hermétiquement fermé et composant optoélectronique hermétiquement fermé

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WO2022268870A3 (fr) 2023-03-23
DE102021206477B4 (de) 2023-01-12
DE102021206477A1 (de) 2022-12-29
EP4359845A2 (fr) 2024-05-01

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