WO2022263968A1 - 表示装置、電子機器 - Google Patents

表示装置、電子機器 Download PDF

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Publication number
WO2022263968A1
WO2022263968A1 PCT/IB2022/055232 IB2022055232W WO2022263968A1 WO 2022263968 A1 WO2022263968 A1 WO 2022263968A1 IB 2022055232 W IB2022055232 W IB 2022055232W WO 2022263968 A1 WO2022263968 A1 WO 2022263968A1
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Prior art keywords
electrode
insulator
conductor
layer
transistor
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Ceased
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PCT/IB2022/055232
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English (en)
French (fr)
Japanese (ja)
Inventor
大澤信晴
奥山拓夢
瀬尾哲史
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to CN202280041852.8A priority Critical patent/CN117480861A/zh
Priority to KR1020247001019A priority patent/KR20240022559A/ko
Priority to US18/569,497 priority patent/US20240284766A1/en
Priority to JP2023529147A priority patent/JP7840328B2/ja
Publication of WO2022263968A1 publication Critical patent/WO2022263968A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H05B33/24—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers of metallic reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00

Definitions

  • One embodiment of the present invention relates to a display device, an electronic device, or a semiconductor device.
  • one embodiment of the present invention is not limited to the above technical field.
  • a technical field of one embodiment of the invention disclosed in this specification and the like relates to a product, a method, or a manufacturing method.
  • one aspect of the invention relates to a process, machine, manufacture, or composition of matter. Therefore, the technical fields of one embodiment of the present invention disclosed in this specification more specifically include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, driving methods thereof, or manufacturing methods thereof; can be mentioned as an example.
  • Light-emitting devices (organic EL devices) utilizing electroluminescence (EL) using organic compounds have been put to practical use.
  • the basic structure of these light-emitting devices is to sandwich an organic compound layer (EL layer) containing a light-emitting material between a pair of electrodes.
  • EL layer organic compound layer
  • Such a light-emitting device is self-luminous, when it is used as a pixel of a display, it has advantages such as high visibility and no need for a backlight, compared to liquid crystal, and is suitable as a flat panel display element.
  • Another great advantage of a display using such a light-emitting device is that it can be made thin and light. Another feature is its extremely fast response speed.
  • a display or a lighting device using such a light-emitting device is suitable for various electronic devices, and research and development are proceeding in search of a light-emitting device having better characteristics.
  • a light-emitting device that emits light having a plurality of emission colors, the light-emitting device having a first light-emitting element and a second light-emitting element, wherein the first light-emitting element and the first lower electrode , a first light-emitting layer on the first lower electrode, a second light-emitting layer on the first light-emitting layer, and an upper electrode on the second light-emitting layer, wherein the second light-emitting element is , a second lower electrode, a first light-emitting layer on the second lower electrode, a second light-emitting layer on the first light-emitting layer, and an upper electrode on the second light-emitting layer.
  • the first light-emitting layer has an emission spectrum peak on the longer wavelength side than the second light-emitting layer, and the distance between the first lower electrode and the first light-emitting layer is the distance between the second lower electrode and the second light-emitting layer. 1 is known (Patent Document 1).
  • Non-Patent Document 1 discloses a method for manufacturing an organic optoelectronic device using standard UV photolithography.
  • An object of one embodiment of the present invention is to provide a novel display device that is highly convenient, useful, or reliable. Another object is to provide a novel electronic device that is highly convenient, useful, or reliable. Another object is to provide a novel display device, a novel electronic device, or a novel semiconductor device.
  • One embodiment of the present invention is a display device including a first light-emitting device, a second light-emitting device, an insulating film, a conductive film, a first reflective film, and a second reflective film. is.
  • the first light emitting device comprises a first electrode, a second electrode and a first unit.
  • the first unit is sandwiched between the first electrode and the second electrode, and the first electrode is sandwiched between the first unit and the insulating film.
  • a second light emitting device comprises a third electrode, a fourth electrode and a second unit.
  • the second unit is sandwiched between the third electrode and the fourth electrode, and the third electrode is sandwiched between the second unit and the insulating film.
  • the third electrode has a first gap with the first electrode.
  • a conductive film electrically connects the second electrode and the fourth electrode, and the first gap is sandwiched between the conductive film and the insulating film.
  • a first reflective film is sandwiched between the first electrode and the insulating film, and the first reflective film has a first distance DR between the second electrode.
  • a second reflective film is sandwiched between the third electrode and the insulating film, and the second reflective film has a second distance DG from the fourth electrode.
  • An aspect of the present invention is a display device in which the second unit has a function of emitting a first light, and the first light has a maximum peak of an emission spectrum in a range of 480 nm or more and 600 nm or less. be.
  • steps generated in the conductive film can be reduced.
  • green light can be used for display. As a result, it is possible to provide a novel display device with excellent convenience, usefulness, or reliability.
  • One embodiment of the present invention is the above display device including a filler.
  • a filler material is sandwiched between the first electrode and the third electrode, and a filler material is sandwiched between the insulating film and the conductive film. Also, the filler is sandwiched between the first unit and the second unit.
  • a gap formed between the first light emitting device and the second light emitting device can be filled with a filler.
  • a step caused by a gap formed between the first light emitting device and the second light emitting device can be reduced.
  • steps generated in the conductive film can be reduced.
  • One embodiment of the present invention is the above display device including a third light-emitting device and a third reflective film.
  • a third light emitting device comprises a fifth electrode, a sixth electrode and a third unit.
  • the third unit is sandwiched between the fifth electrode and the sixth electrode, and the fifth electrode is sandwiched between the third unit and the insulating film. Also, the fifth electrode has a second gap with the third electrode.
  • a conductive film electrically connects the fourth electrode and the sixth electrode, and a second gap is sandwiched between the conductive film and the insulating film.
  • a third reflective film is sandwiched between the fifth electrode and the insulating film, and the third reflective film has a third distance DB from the sixth electrode.
  • the third distance DB satisfies the following formulas (1) to (3) between the first distance DR and the second distance DG.
  • One embodiment of the present invention is the above display device, in which the third distance DB is 200 nm or less.
  • One embodiment of the present invention is the above display device including a third light-emitting device and a third reflective film.
  • a third light emitting device comprises a fifth electrode, a sixth electrode and a third unit.
  • the third unit is sandwiched between the fifth electrode and the sixth electrode, and the fifth electrode is sandwiched between the third unit and the insulating film. Also, the fifth electrode has a second gap with the third electrode.
  • a conductive film electrically connects the fourth electrode and the sixth electrode, and a second gap is sandwiched between the conductive film and the insulating film.
  • a third reflective film is sandwiched between the fifth electrode and the insulating film, and the third reflective film has a third distance DB from the sixth electrode.
  • the third distance DB satisfies the following formulas (1) to (3) between the first distance DR and the second distance DG.
  • An aspect of the present invention is the above display device, in which the first distance DR is 150 nm or less.
  • the first unit has a function of emitting a second light
  • the second light has a wavelength of 600 nm or more and 740 nm or less
  • the third unit emits the third light.
  • the above display device has a function of emitting light
  • the third light has a wavelength of 400 nm or more and 480 nm or less.
  • a step between the first light emitting device and the third light emitting device can be reduced.
  • steps generated in the conductive film can be reduced.
  • red light can be used for display.
  • blue light can be used for display. As a result, it is possible to provide a novel display device with excellent convenience, usefulness, or reliability.
  • An aspect of the present invention is the above display device, in which the first light-emitting device includes the first layer and the second light-emitting device includes the second layer.
  • a first layer is sandwiched between the first unit and the first electrode, and the first layer includes an electron-accepting substance and a hole-transporting material.
  • the first layer has an electric resistivity of 1 ⁇ 10 2 [ ⁇ cm] or more and 1 ⁇ 10 8 [ ⁇ cm] or less.
  • a second layer is sandwiched between the second unit and the third electrode, the second layer having a third gap with the first layer.
  • the second layer contains an electron-accepting substance and a hole-transporting material.
  • the current flowing between the first layer and the second layer can be suppressed. Also, it is possible to suppress the crosstalk phenomenon that occurs between the first light emitting device and the second light emitting device. As a result, it is possible to provide a novel display device with excellent convenience, usefulness, or reliability.
  • One embodiment of the present invention is the above display device including a display region, a first functional layer, and a second functional layer.
  • the display area comprises a set of pixels, the set of pixels including a first pixel and a second pixel.
  • the first pixel comprises a first light emitting device and a first pixel circuit, the first light emitting device electrically connected to the first pixel circuit. Also, the first pixel circuit is supplied with the first image signal.
  • a second pixel comprises a second light emitting device and a second pixel circuit, the second light emitting device electrically connected to the second pixel circuit. Also, the second pixel circuit is supplied with a second image signal.
  • the first functional layer includes first pixel circuits and second pixel circuits.
  • the first functional layer is sandwiched between the first light emitting device and the second functional layer, and the first functional layer is sandwiched between the second light emitting device and the second functional layer.
  • a second functional layer includes a driving circuit, the driving circuit generating a first image signal and a second image signal.
  • the driver circuit can be arranged so as to overlap the first pixel circuit and the second pixel circuit. Also, the area outside the area for displaying image information can be reduced. Also, the distance between the first pixel circuit and the driver circuit can be shortened. Also, the transfer of the image signal can be made without delay. As a result, it is possible to provide a novel display device with excellent convenience, usefulness, or reliability.
  • One embodiment of the present invention is an electronic device including a computing unit and the above display device.
  • the calculation unit generates image information, and the display device displays the image information.
  • One embodiment of the present invention is an electronic device including a computing unit and the above display device.
  • the second functional layer includes an arithmetic unit, the arithmetic unit generates image information, and the display device displays the image information.
  • a novel display device with excellent convenience, usefulness, or reliability can be provided.
  • a novel display device, a novel electronic device, or a novel semiconductor device can be provided.
  • FIG. 1 is a diagram illustrating the configuration of a display device according to an embodiment.
  • FIG. 2 is a diagram illustrating the configuration of the display device according to the embodiment.
  • FIG. 3 is a diagram for explaining the configuration of the display device according to the embodiment.
  • 4A and 4B are diagrams illustrating the configuration of the light emitting device according to the embodiment.
  • 5A and 5B are diagrams for explaining the configuration of the display device according to the embodiment.
  • 6A and 6B are cross-sectional views illustrating the configuration of the display device according to the embodiment.
  • FIG. 7 is a circuit diagram illustrating pixels of the display device according to the embodiment.
  • FIG. 8 is a diagram for explaining the configuration of the display device according to the embodiment.
  • FIG. 9 is a diagram for explaining the configuration of the display device according to the embodiment.
  • FIG. 10 is a diagram for explaining the configuration of the display device according to the embodiment.
  • 11A and 11B are diagrams for explaining the configuration of the display device according to the embodiment.
  • FIG. 12 is a diagram for explaining the configuration of the display device according to the embodiment.
  • 13A and 13B are diagrams for explaining the configuration of the display device according to the embodiment.
  • FIG. 14 is a diagram for explaining the configuration of the display device according to the embodiment.
  • FIG. 15 is a diagram for explaining the configuration of the display device according to the embodiment.
  • FIG. 16 is a diagram for explaining the configuration of the display device according to the embodiment.
  • 17A and 17B are diagrams for explaining the configuration of the display device according to the embodiment.
  • FIG. 18 is a diagram illustrating the configuration of a display device according to an embodiment
  • 19A to 19C are diagrams for explaining the structure of a transistor according to an embodiment.
  • 20A to 20C are diagrams illustrating metal oxides according to embodiments.
  • 21A to 21D are diagrams for explaining the electronic device according to the embodiment.
  • 22A and 22B are diagrams for explaining the electronic device according to the embodiment.
  • 23A and 23B are diagrams illustrating the configuration of a light emitting device according to an example.
  • FIG. 24 is a diagram for explaining the current density-luminance characteristics of the light emitting device according to the example.
  • FIG. 25 is a diagram illustrating luminance-current efficiency characteristics of a light-emitting device according to an example.
  • FIG. 26 is a diagram explaining the voltage-luminance characteristics of the light-emitting device according to the example.
  • FIG. 27 is a diagram illustrating voltage-current characteristics of a light-emitting device according to an example.
  • FIG. 28 is a diagram for explaining emission spectra of light-emitting devices according to Examples.
  • FIG. 29 is a diagram illustrating current density-luminance characteristics of a light-emitting device according to an example.
  • FIG. 30 is a diagram for explaining luminance-current efficiency characteristics of a light-emitting device according to an example.
  • FIG. 31 is a diagram explaining the voltage-luminance characteristics of the light-emitting device according to the example.
  • FIG. 32 is a diagram explaining the voltage-current characteristics of the light-emitting device according to the example.
  • FIG. 33 is a diagram for explaining emission spectra of light-emitting devices according to Examples.
  • FIG. 34 is a diagram illustrating the current density-luminance characteristics of the light-emitting device according to the example.
  • FIG. 35 is a diagram illustrating luminance-current efficiency characteristics of a light-emitting device according to an example.
  • FIG. 36 is a diagram explaining the voltage-luminance characteristics of the light-emitting device according to the example.
  • FIG. 37 is a diagram explaining the voltage-current characteristics of the light-emitting device according to the example.
  • FIG. 38 is a diagram illustrating luminance-blue index characteristics of a light-emitting device according to an example.
  • FIG. 39 is a diagram explaining the emission spectrum of the light emitting device according to the example.
  • FIG. 40A to 40D are diagrams illustrating the configuration of the light emitting device 5 according to the example.
  • FIG. 41 is a diagram illustrating the current density-luminance characteristics of the light-emitting device 5 according to Example.
  • FIG. 42 is a diagram illustrating luminance-current efficiency characteristics of the light-emitting device 5 according to Example.
  • FIG. 43 is a diagram illustrating voltage-luminance characteristics of the light-emitting device 5 according to Example.
  • FIG. 44 is a diagram illustrating voltage-current characteristics of the light-emitting device 5 according to Example.
  • FIG. 45 is a diagram illustrating the emission spectrum of the light emitting device 5 according to Example.
  • FIG. 46 is a diagram illustrating temporal changes in normalized luminance of the light-emitting device 5 according to Example.
  • a display device of one embodiment of the present invention includes a first light-emitting device, a second light-emitting device, an insulating film, a conductive film, a first reflective film, and a second reflective film.
  • the first light emitting device comprises a first electrode, a second electrode and a first unit, the first unit sandwiched between the second electrode and the first electrode, the first electrode 1 unit and an insulating film.
  • the second light emitting device comprises a third electrode, a fourth electrode and a second unit, the second unit sandwiched between the fourth electrode and the third electrode, the third electrode sandwiched between the two units and the insulating film, the third electrode having a first gap with the first electrode.
  • a conductive film electrically connects the second electrode and the fourth electrode, and the first gap is sandwiched between the conductive film and the insulating film.
  • the first reflective film is sandwiched between the first electrode and the insulating film and has a first distance DR from the second electrode.
  • the second reflective film is sandwiched between the third electrode and the insulating film and has a second distance DG from the fourth electrode.
  • the second distance DG is greater than the first distance DR by a difference greater than 20 nm and less than 85 nm.
  • a step formed in the conductive film can be reduced.
  • steps generated in the conductive film can be reduced.
  • FIG. 1 is a cross-sectional view illustrating the structure of a display device of one embodiment of the present invention.
  • FIG. 2 is a cross-sectional view illustrating the structure of a display device of one embodiment of the present invention.
  • FIG. 3 is a cross-sectional view illustrating the structure of a display device of one embodiment of the present invention.
  • the display device 700 described in this embodiment includes a light-emitting device 550R (i, j), a light-emitting device 550G (i, j), an insulating film 521, a conductive film 552, and a reflective film REFR (i, j). and a reflective film REFG (i, j) (see FIG. 1).
  • Light emitting device 550R(i,j) comprises electrode 551R(i,j), electrode 552R(i,j) and unit 103R(i,j).
  • Unit 103R(i,j) is sandwiched between electrode 552R(i,j) and electrode 551R(i,j), and electrode 551R(i,j) is sandwiched between unit 103R(i,j) and insulating film 521. sandwiched between
  • Light emitting device 550G(i,j) comprises electrode 551G(i,j), electrode 552G(i,j) and unit 103G(i,j).
  • Unit 103G(i,j) is sandwiched between electrode 552G(i,j) and electrode 551G(i,j), and electrode 551G(i,j) is sandwiched between unit 103G(i,j) and insulating film 521. sandwiched between
  • Electrode 551G (i, j) ⁇ Configuration example of electrode 551G (i, j)>>
  • the electrode 551G(i,j) has a gap 551RG(i,j) with the electrode 551R(i,j).
  • Conductive film 552 electrically connects electrode 552R (i, j) and electrode 552G (i, j).
  • one conductive film can be used for the conductive film 552, the electrode 552R(i, j), and the electrode 552G(i, j).
  • a region overlapping with the electrode 551R(i,j) of one conductive film can be used as the electrode 552R(i,j)
  • a region overlapping with the electrode 551G(i,j) of the one conductive film can be used as the electrode 552G. (i, j)
  • the conductive film 552 can be used between the electrode 552R (i, j) and the electrode 552G (i, j) of one conductive film.
  • Gap 551 RG (i, j) is sandwiched between conductive film 552 and insulating film 521 .
  • Reflective film REFR (i, j) is sandwiched between electrode 551 R (i, j) and insulating film 521 . Moreover, the reflective film REFR(i, j) has a distance DR between it and the electrode 552R(i, j).
  • Reflective film REFG (i, j) is sandwiched between electrode 551G (i, j) and insulating film 521 . Moreover, the reflective film REFG(i,j) has a distance DG between it and the electrode 552G(i,j).
  • the distance DG and the distance DR are in a relationship that satisfies all of the following formulas (1) to (3).
  • the distance DR is longer than the distance DG, the difference being greater than 20 nm and less than 85 nm. More preferably, the distance DR is longer than the distance DG by a difference of more than 20 nm and less than 40 nm.
  • Unit 103G(i, j) has a function of emitting light ELG. Also, the optical ELG has the maximum peak of the emission spectrum in the range of 480 nm or more and 600 nm or less.
  • steps generated in the conductive film 552 can be reduced.
  • a phenomenon in which a break or a crack occurs in the conductive film 552 along the step can be suppressed.
  • green light can be used for display. As a result, it is possible to provide a novel display device with excellent convenience, usefulness, or reliability.
  • a display device 700 described in this embodiment has a filler 529RG(i, j) (see FIG. 1).
  • the filling material 529RG(i,j) is sandwiched between the insulating film 521 and the conductive film 552.
  • the filling material 529RG fills between the insulating film 521 and the conductive film 552 .
  • Filler 529RG(i,j) is sandwiched between unit 103R(i,j) and unit 103G(i,j). For example, filler 529RG fills between unit 103R and unit 103G.
  • the light emitting device 550G(i,j) can be separated from the light emitting device 550R(i,j).
  • the gap formed between light emitting device 550R(i,j) and light emitting device 550G(i,j) can be filled with filler material 529RG(i,j).
  • the step caused by the gap formed between the light emitting device 550R(i, j) and the light emitting device 550G(i, j) can be reduced.
  • steps generated in the conductive film 552 can be reduced.
  • a phenomenon in which a break or a crack occurs in the conductive film 552 along the step can be suppressed. As a result, it is possible to provide a novel display device with excellent convenience, usefulness, or reliability.
  • an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like, or a laminated material obtained by laminating a plurality of films selected from these can be used as the filler 529RG(i, j).
  • a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, etc., or a film containing a laminated material in which a plurality of films selected from these are laminated can be used as the filler 529RG(i,j).
  • the silicon nitride film is a dense film and has an excellent function of suppressing the diffusion of impurities.
  • polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, acrylic resin, etc., or a laminated material or composite material of a plurality of resins selected from these can be used for the filler 529RG(i,j).
  • Filler 529RG(i,j) comprises, for example, filler 529(1) and filler 529(2).
  • an insulating inorganic material can be used for filler 529(1).
  • aluminum oxide can be used for filler 529(1).
  • a dense film formed by chemical vapor deposition, atomic layer deposition (ALD), or the like can be used as the filler 529(1).
  • an insulating organic material can be used for the filler 529(2).
  • polyimide or acrylic resin can be used for filler 529(2).
  • the filler 529(2) can be formed using a photosensitive material.
  • a display device 700 described in this embodiment has a light-emitting device 550B (i, j) and a reflective film REFB (i, j) (see FIG. 2).
  • the display device 700 also has a filler 529GB(i,j) and a filler 529BR(i,j). Note that the light emitting device 550B(i,j) is adjacent to the light emitting device 550R(i,j+1).
  • Light emitting device 550B(i,j) comprises electrode 551B(i,j), electrode 552B(i,j) and unit 103B(i,j).
  • Unit 103B(i,j) is sandwiched between electrode 552B(i,j) and electrode 551B(i,j), and electrode 551B(i,j) is sandwiched between unit 103B(i,j) and insulating film 521. sandwiched between
  • Electrode 551B(i,j) has gap 551GB(i,j) with electrode 551G(i,j).
  • the conductive film 552 electrically connects the electrodes 552G(i, j) and the electrodes 552B(i, j).
  • a gap 551 GB (i, j) is sandwiched between the conductive film 552 and the insulating film 521 .
  • Reflective film REFB (i, j) is sandwiched between electrode 551 B (i, j) and insulating film 521 . Moreover, the reflective film REFB(i, j) has a distance DB from the electrode 552B(i, j).
  • the distance DB has a relationship that satisfies all of the following formulas (1) to (3) with the distance DR and the distance DG.
  • the distance DB is longer than the distance DR
  • the distance DR is longer than the distance DG
  • the difference between the distance DB and the distance DR is less than 60 nm
  • the difference between the distance DR and the distance DG is less than 35 nm.
  • a display device 700 described in this embodiment includes a light emitting device 550B (i, j) and a reflective film REFB (i, j) (see FIG. 3).
  • Reflective film REFB (i, j) is sandwiched between electrode 551 B (i, j) and insulating film 521 . Moreover, the reflective film REFB(i, j) has a distance DB from the electrode 552B(i, j).
  • the distance DB has a relationship that satisfies all of the following formulas (1) to (3) with the distance DR and the distance DG.
  • the distance DR is longer than the distance DG
  • the distance DG is longer than the distance DB
  • the difference between the distance DR and the distance DG is less than 35 nm
  • the difference between the distance DG and the distance DB is less than 35 nm.
  • the unit 103R (i, j) has a function of emitting light ELR, and the light ELR has a wavelength of 600 nm or more and 740 nm or less (see FIG. 3).
  • Embodiment 2 the configuration described in Embodiment 2 can be used for the unit 103R(i, j).
  • the unit 103B (i, j) has a function of emitting light ELB, and the light ELB has a wavelength of 400 nm or more and 480 nm or less (see FIG. 3).
  • Embodiment 2 the configuration described in Embodiment 2 can be used for unit 103B(i, j).
  • steps generated in the conductive film 552 can be reduced.
  • a phenomenon in which a break or a crack occurs in the conductive film 552 along the step can be suppressed.
  • red light can be used for display.
  • blue light can be used for display. As a result, it is possible to provide a novel display device with excellent convenience, usefulness, or reliability.
  • Light emitting device 550R(i,j) comprises layer 104R(i,j), layer 104R(i,j) sandwiched between unit 103R(i,j) and electrode 551R(i,j).
  • the layer 104R(i, j) contains an electron-accepting substance AM and a hole-transporting material HTM. Also, the layer 104R(i, j) has an electrical resistivity of 1 ⁇ 10 2 [ ⁇ cm] or more and 1 ⁇ 10 8 [ ⁇ cm] or less.
  • the structure of the layer 104 described in Embodiment 3 can be used for the layer 104R(i,j).
  • Light emitting device 550G(i,j) comprises layer 104G(i,j), layer 104G(i,j) sandwiched between unit 103G(i,j) and electrode 551G(i,j).
  • Layer 104G(i,j) also has a gap 104RG(i,j) with layer 104R(i,j). Note that, for example, the gap 104RG (i, j) can be formed using an etching method.
  • a film forming layer 104R(i,j) on electrode 551R(i,j), a laminated film forming unit 103R(i,j), and a unit 103R(i,j). j) and a first sacrificial layer for protecting the layer j) are formed in this order.
  • photolithographic and etching methods are used to shape the first sacrificial layer, unit 103R(i,j) and layer 104R(i,j), into a predetermined shape. Note that when the unnecessary portion of the laminated film that becomes the unit 103R(i, j) is removed using an etching method, the thinner the laminated film is, the less residue is left, and the easier the processing becomes.
  • a first sacrificial layer protecting unit 103R(i,j) and a film that becomes layer 104G(i,j) on electrode 551G(i,j), and unit 103G(i,j). j) and a second sacrificial layer for protecting the unit 103G(i,j) are formed in this order.
  • photolithographic and etching methods are used to form the second sacrificial layer, units 103G(i,j) and layers 104G(i,j), into predetermined shapes. Note that when the unnecessary portion of the laminated film forming the unit 103G(i,j) is removed by etching, the thinner the laminated film is, the less residue is left and the easier the processing becomes.
  • gaps 104RG(i,j) can be formed.
  • the layer 104G(i, j) contains a material AM having electron-accepting properties and a material HTM having hole-transporting properties.
  • the structure of the layer 104 described in Embodiment 3 can be used for the layer 104G(i, j).
  • the current flowing between the layer 104R(i, j) and the layer 104G(i, j) can be suppressed. Also, it is possible to suppress the crosstalk phenomenon that occurs between the light emitting device 550R(i, j) and the light emitting device 550G(i, j). As a result, it is possible to provide a novel display device with excellent convenience, usefulness, or reliability.
  • a device manufactured using a metal mask or FMM fine metal mask, high-definition metal mask
  • a device with an MM (metal mask) structure is sometimes referred to as a device with an MM (metal mask) structure.
  • a device manufactured without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure. Since a display device with an MML structure is manufactured without using a metal mask, it has a higher degree of freedom in designing pixel arrangement, pixel shape, etc. than a display device with an FMM structure or an MM structure.
  • the island-shaped EL layer is not formed by the pattern of the metal mask, but is formed by forming the EL layer over the entire surface and then processing it. Therefore, it is possible to realize a high-definition display device or a display device with a high aperture ratio, which has hitherto been difficult to achieve. Furthermore, since the EL layer can be separately formed for each color, a display device with extremely vivid, high-contrast, and high-quality display can be realized. Further, by providing the sacrificial layer over the EL layer, damage to the EL layer during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.
  • the display device of one embodiment of the present invention can have a structure in which an insulator covering an end portion of the pixel electrode is not provided. In other words, an insulator is not provided between the pixel electrode and the EL layer.
  • the viewing angle (the maximum angle at which a constant contrast ratio is maintained when the screen is viewed obliquely) is 100° or more and less than 180°, preferably 150°. It can be in the range of 170° or more. It should be noted that the above viewing angle can be applied to each of the vertical and horizontal directions.
  • the viewing angle dependency can be improved, and the visibility of images can be improved.
  • the display device has a fine metal mask (FMM) structure
  • FMM fine metal mask
  • a metal mask also referred to as FMM
  • FMM metal mask having openings so that the EL material is deposited in desired regions during EL deposition
  • the EL material is vapor-deposited in a desired region by performing EL vapor deposition through FMM.
  • the substrate size for EL vapor deposition increases, the size and weight of the FMM also increase.
  • heat or the like is applied to the FMM during EL vapor deposition, the FMM may be deformed.
  • there is a method of applying a constant tension to the FMM during EL deposition, and the weight and strength of the FMM are important parameters.
  • the display device of one embodiment of the present invention is manufactured using the MML structure, an excellent effect such as a higher degree of freedom in pixel arrangement and the like than in the FMM structure can be obtained.
  • this structure is highly compatible with, for example, a flexible device, and one or both of the pixel and the driver circuit can have various circuit arrangements.
  • the display device of one embodiment of the present invention includes an OS transistor and a light-emitting device with an MML (metal maskless) structure.
  • MML metal maskless
  • leakage current that can flow through the transistor and leakage current that can flow between adjacent light-emitting elements also referred to as lateral leakage current, side leakage current, or the like
  • an observer can observe any one or more of sharpness of the image, sharpness of the image, high saturation, and high contrast ratio.
  • the leakage current that can flow in the transistor and the horizontal leakage current between light-emitting elements are extremely low, so that light leakage that can occur during black display (so-called whitening) is extremely small (also called pure black display).
  • FIG. 4A is a cross-sectional view illustrating the structure of a light-emitting device 550 of one embodiment of the present invention
  • FIG. 4B is a diagram illustrating energy levels of materials used in the light-emitting device 550 of one embodiment of the present invention.
  • the configuration of the light emitting device 550 described in this embodiment can be applied to the light emitting device 550R(i,j), the light emitting device 550G(i,j), or the light emitting device 550B(i,j).
  • the code "550" used in the description of the light emitting device 550 is replaced with "550R(i,j)", “550G(i,j)” or “550B(i,j)” to 550R(i,j), light emitting device 550G(i,j) or light emitting device 550B(i,j).
  • the reference numerals attached to the elements constituting the light emitting device 550 can also be read appropriately.
  • the code "103" used in the description of the unit 103 is read as “103R(i,j)", “103G(i,j)” or “103B(i,j)", and the unit 103R(i,j) ), unit 103G(i,j) or unit 103B(i,j).
  • a light-emitting device 550 described in this embodiment includes an electrode 551 , an electrode 552X, and the unit 103 .
  • Electrode 552X comprises an area overlapping electrode 551
  • unit 103 comprises an area sandwiched between electrode 551 and electrode 552X.
  • the unit 103 has a single layer structure or a laminated structure.
  • unit 103 comprises layer 111, layer 112 and layer 113 (see Figure 4A).
  • the unit 103 has a function of emitting light EL1.
  • Layer 111 comprises a region sandwiched between layers 112 and 113
  • layer 112 comprises a region sandwiched between electrode 551 and layer 111
  • layer 113 comprises a region sandwiched between electrode 552X and layer 111.
  • a layer selected from functional layers such as a light-emitting layer, a hole-transporting layer, an electron-transporting layer, and a carrier-blocking layer can be used for the unit 103 .
  • a layer selected from functional layers such as a hole injection layer, an electron injection layer, an exciton blocking layer, and a charge generation layer can be used in the unit 103 .
  • a material having a hole-transport property can be used for the layer 112 .
  • Layer 112 can also be referred to as a hole transport layer. Note that a structure in which a material having a larger bandgap than the light-emitting material contained in the layer 111 is used for the layer 112 is preferable. Accordingly, energy transfer from excitons generated in the layer 111 to the layer 112 can be suppressed.
  • a material having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more can be suitably used as a material having a hole-transport property.
  • an amine compound or an organic compound having a ⁇ -electron rich heteroaromatic ring skeleton can be used as a material having a hole-transport property.
  • a compound having an aromatic amine skeleton, a compound having a carbazole skeleton, a compound having a thiophene skeleton, a compound having a furan skeleton, and the like can be used.
  • a compound having an aromatic amine skeleton or a compound having a carbazole skeleton is preferable because it has good reliability, high hole-transport properties, and contributes to reduction in driving voltage.
  • Examples of compounds having an aromatic amine skeleton include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N'-bis(3-methylphenyl )-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviation: TPD), 4,4'-bis[N-(spiro-9,9'-bifluorene-2 -yl)-N-phenylamino]biphenyl (abbreviation: BSPB), 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3′-( 9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4′-(9-phenyl-9H-carba
  • Examples of compounds having a carbazole skeleton include 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4′-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis (3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,3′-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), and the like can be used.
  • mCP 1,3-bis(N-carbazolyl)benzene
  • CBP 4,4′-di(N-carbazolyl)biphenyl
  • CzTP 3,6-bis (3,5-diphenylphenyl)-9-phenylcarbazole
  • PCCP 3,3′-bis(9-phenyl-9H-carbazole)
  • Compounds having a thiophene skeleton include, for example, 4,4′,4′′-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4 -[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]- 6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), etc. can be used.
  • DBT3P-II 4,4′,4′′-(benzene-1,3,5-triyl)tri(dibenzothiophene)
  • DBTFLP-III 2,8-diphenyl-4 -[4-(9-phenyl-9H-fluoren-9-yl)
  • Examples of compounds having a furan skeleton include 4,4′,4′′-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), 4- ⁇ 3-[3- (9-phenyl-9H-fluoren-9-yl)phenyl]phenyl ⁇ dibenzofuran (abbreviation: mmDBFFLBi-II), and the like can be used.
  • DBF3P-II 4,4′,4′′-(benzene-1,3,5-triyl)tri(dibenzofuran)
  • mmDBFFLBi-II 4- ⁇ 3-[3- (9-phenyl-9H-fluoren-9-yl)phenyl]phenyl ⁇ dibenzofuran
  • a material having an electron-transporting property a material having an anthracene skeleton, a mixed material, or the like can be used for the layer 113 .
  • Layer 113 can also be referred to as an electron transport layer. Note that a structure in which a material having a larger bandgap than the light-emitting material contained in the layer 111 is used for the layer 113 is preferable. Thus, energy transfer from excitons generated in the layer 111 to the layer 113 can be suppressed.
  • a metal complex or an organic compound having a ⁇ -electron-deficient heteroaromatic ring skeleton can be used as the electron-transporting material.
  • a material having an electron mobility of 1 ⁇ 10 ⁇ 7 cm 2 /Vs or more and 5 ⁇ 10 ⁇ 5 cm 2 /Vs or less under the condition that the square root of the electric field strength [V/cm] is 600 is considered to have an electron transport property. It can be suitably used for materials having Thereby, the electron transport property in the electron transport layer can be suppressed. Alternatively, the injection amount of electrons into the light-emitting layer can be controlled. Alternatively, it is possible to prevent the light-emitting layer from being in a state of excess electrons.
  • metal complexes include bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis( 2 -methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), bis[2- (2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ), and the like can be used.
  • Examples of the organic compound having a ⁇ -electron-deficient heteroaromatic ring skeleton include a heterocyclic compound having a polyazole skeleton, a heterocyclic compound having a diazine skeleton, a heterocyclic compound having a pyridine skeleton, a heterocyclic compound having a triazine skeleton, and the like. can be used.
  • a heterocyclic compound having a diazine skeleton or a heterocyclic compound having a pyridine skeleton is preferable because of its high reliability.
  • a heterocyclic compound having a diazine (pyrimidine or pyrazine) skeleton has a high electron-transport property and can reduce driving voltage.
  • heterocyclic compounds having a polyazole skeleton examples include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4 -biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1 ,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H -carbazole (abbreviation: CO11), 2,2′,2′′-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-
  • heterocyclic compounds having a diazine skeleton examples include 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3′-(dibenzo thiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3′-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[ f,h]quinoxaline (abbreviation: 2mCzBPDBq), 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl) ) phenyl]pyrimidine (abbreviation:
  • Heterocyclic compounds having a pyridine skeleton include, for example, 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(3 -pyridyl)phenyl]benzene (abbreviation: TmPyPB), and the like can be used.
  • 35DCzPPy 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine
  • TmPyPB 1,3,5-tri[3-(3 -pyridyl)phenyl]benzene
  • heterocyclic compounds having a triazine skeleton examples include 2-[3′-(9,9-dimethyl-9H-fluoren-2-yl)-1,1′-biphenyl-3-yl]-4,6- Diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 2-[(1,1′-biphenyl)-4-yl]-4-phenyl-6-[9,9′-spirobi(9H-fluorene) -2-yl]-1,3,5-triazine (abbreviation: BP-SFTzn), 2- ⁇ 3-[3-(benzo “b” naphtho[1,2-d]furan-8-yl)phenyl] Phenyl ⁇ -4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTZn), 2- ⁇ 3-[3-[3-(benzo "b” naphtho[1,2-d]furan
  • An organic compound having an anthracene skeleton can be used for the layer 113 .
  • an organic compound containing both an anthracene skeleton and a heterocyclic skeleton can be preferably used.
  • an organic compound containing both an anthracene skeleton and a nitrogen-containing five-membered ring skeleton can be used.
  • an organic compound containing both a nitrogen-containing five-membered ring skeleton containing two heteroatoms in the ring and an anthracene skeleton can be used.
  • a pyrazole ring, imidazole ring, oxazole ring, thiazole ring, and the like can be suitably used for the heterocyclic skeleton.
  • an organic compound containing both an anthracene skeleton and a nitrogen-containing 6-membered ring skeleton can be used.
  • an organic compound containing both a nitrogen-containing 6-membered ring skeleton containing two heteroatoms in the ring and an anthracene skeleton can be used.
  • a pyrazine ring, a pyrimidine ring, a pyridazine ring, or the like can be suitably used for the heterocyclic skeleton.
  • a material in which multiple kinds of substances are mixed can be used for the layer 113 .
  • a mixed material containing an alkali metal, an alkali metal compound, or an alkali metal complex and a substance having an electron-transporting property can be used for the layer 113 .
  • the HOMO level of the material having an electron-transport property is more preferably ⁇ 6.0 eV or higher.
  • a composite material of a substance having an electron-accepting property and a material having a hole-transporting property can be used for the layer 104 .
  • a composite material of a substance having an electron-accepting property and a substance having a relatively deep HOMO level HM1 of ⁇ 5.7 eV or more and ⁇ 5.4 eV or less can be used for the layer 104 (FIG. 4B reference).
  • the mixed material can be suitably used for the layer 113 in combination with the structure in which such a composite material is used for the layer 104 . Thereby, the reliability of the light emitting device can be improved.
  • a structure in which the mixed material is used for the layer 113 and the composite material for the layer 104 and a structure in which a material having a hole-transport property is used for the layer 112 can be combined and used preferably.
  • a material having a HOMO level HM2 in the range of -0.2 eV to 0 eV with respect to the relatively deep HOMO level HM1 can be used for the layer 112 (see FIG. 4B).
  • the reliability of the light emitting device can be improved.
  • the above light-emitting device may be referred to as a Recombination-Site Tailoring Injection structure (ReSTI structure).
  • a structure in which the alkali metal, alkali metal compound, or alkali metal complex exists with a concentration difference (including a case where it is 0) in the thickness direction of the layer 113 is preferable.
  • a metal complex containing an 8-hydroxyquinolinato structure can be used.
  • a methyl-substituted metal complex containing an 8-hydroxyquinolinato structure for example, a 2-methyl-substituted one or a 5-methyl-substituted one
  • a metal complex containing an 8-hydroxyquinolinato structure for example, a 2-methyl-substituted one or a 5-methyl-substituted one
  • 8-hydroxyquinolinato-lithium abbreviation: Liq
  • 8-hydroxyquinolinato-sodium abbreviation: Naq
  • monovalent metal ion complexes especially lithium complexes, are preferred, and Liq is more preferred.
  • a light-emitting material or a light-emitting material and a host material, can be used for layer 111 .
  • the layer 111 can be referred to as a light-emitting layer. Note that a structure in which the layer 111 is arranged in a region where holes and electrons recombine is preferable. As a result, energy generated by recombination of carriers can be efficiently converted into light and emitted.
  • the layer 111 it is preferable to arrange the layer 111 away from the metal used for the electrode or the like. As a result, it is possible to suppress the quenching phenomenon caused by the metal used for the electrode or the like.
  • the layer 111 it is preferable to arrange the layer 111 at an appropriate position according to the emission wavelength by adjusting the distance from the reflective electrode or the like to the layer 111 .
  • the amplitude can be strengthened.
  • the spectrum of light can be narrowed by intensifying light of a predetermined wavelength.
  • bright luminescent colors can be obtained with high intensity.
  • layers 111 can be placed at appropriate locations between electrodes etc. to form a microresonator structure (microcavity).
  • a fluorescent luminescent material a phosphorescent luminescent material, or a material exhibiting thermally delayed fluorescence (TADF) (also referred to as a TADF material) can be used as the luminescent material.
  • TADF thermally delayed fluorescence
  • a fluorescent emitting material can be used for layer 111 .
  • the layer 111 can use a fluorescent light-emitting substance exemplified below. Note that the layer 111 is not limited to this, and various known fluorescent light-emitting substances can be used for the layer 111 .
  • condensed aromatic diamine compounds typified by pyrenediamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 are preferable because of their high hole-trapping properties and excellent luminous efficiency or reliability.
  • N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine abbreviation: 2DPAPPA
  • N,N,N' ,N′,N′′,N′′,N′′′,N′′′-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetramine abbreviation: DBC1
  • DBC1 N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine
  • 2PCAPA N-[9,10-bis(1,1'-biphenyl-2 -yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine
  • 2PCABPhA N-(9,10-diphenyl-2-anthryl
  • DCM1 2-(2- ⁇ 2-[4-(dimethylamino)phenyl]ethenyl ⁇ -6-methyl-4H-pyran-4-ylidene)propanedinitrile
  • DCM2 2- ⁇ 2-methyl- 6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolidin-9-yl)ethenyl]-4H-pyran-4-ylidene ⁇ propandinitrile
  • DCM2 N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine
  • p-mPhTD 7,14-diphenyl-N,N,N',N'-tetrakis
  • 4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine abbreviation: p-mPhAFD
  • Phosphorescent materials can be used for layer 111 .
  • the layer 111 can be formed using a phosphorescent substance exemplified below. Note that various known phosphorescent light-emitting substances can be used for the layer 111 without being limited thereto.
  • An iridium complex, an organometallic iridium complex having a pyrimidine skeleton, an organometallic iridium complex having a pyrazine skeleton, an organometallic iridium complex having a pyridine skeleton, a rare earth metal complex, a platinum complex, or the like can be used for the layer 111 .
  • Organometallic iridium complexes having a 4H-triazole skeleton include tris ⁇ 2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazole-3 -yl- ⁇ N2]phenyl- ⁇ C ⁇ iridium(III) (abbreviation: [Ir(mpptz-dmp) 3 ]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium (III) (abbreviation: [Ir(Mptz) 3 ]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium (III) (abbreviation: [Ir(iPrptz-3b) 3 ]), etc. can be used.
  • organometallic iridium complexes having a 1H-triazole skeleton examples include tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium (III) (abbreviation: [Ir(Mptz1-mp) 3 ]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium (III) (abbreviation: [Ir(Prptz1-Me) 3 ) ]), etc. can be used.
  • organometallic iridium complexes having an imidazole skeleton examples include fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpmi) 3 ]) , tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium (III) (abbreviation: [Ir(dmpimpt-Me) 3 ]), etc. can be used.
  • Organometallic iridium complexes having a phenylpyridine derivative having an electron-withdrawing group as a ligand include bis[2-(4′,6′-difluorophenyl)pyridinato-N,C 2′ ]iridium(III) tetrakis (1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4′,6′-difluorophenyl)pyridinato-N,C 2′ ]iridium (III) picolinate (abbreviation: FIrpic), bis ⁇ 2-[ 3′,5′-bis(trifluoromethyl)phenyl]pyridinato-N,C2 ′ ⁇ iridium(III) picolinate (abbreviation: [Ir( CF3ppy ) 2 (pic)]), bis[2-(4 ',6'-difluorophenyl)pyridinato-N,C2 ' ]i
  • Organometallic iridium complexes having a pyrimidine skeleton include tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mpm) 3 ]), tris(4-t-butyl-6 -phenylpyrimidinato)iridium (III) (abbreviation: [Ir(tBuppm) 3 ]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium (III) (abbreviation: [Ir( mppm) 2 (acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium (III) (abbreviation: [Ir(tBuppm) 2 (acac)]), (acetyl acetonato)bis[6-(2-norborny
  • organometallic iridium complexes having a pyrazine skeleton examples include (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium (III) (abbreviation: [Ir(mppr-Me) 2 (acac) ]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr) 2 (acac)]), etc. can be done.
  • organometallic iridium complexes having a pyridine skeleton examples include tris(2-phenylpyridinato-N,C2 ' )iridium(III) (abbreviation: [Ir(ppy) 3 ]), bis(2-phenylpyridina to-N,C2 ' )iridium(III) acetylacetonate (abbreviation: [Ir(ppy) 2 (acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir (bzq) 2 (acac)]), tris(benzo[h]quinolinato)iridium (III) (abbreviation: [Ir(bzq) 3 ]), tris(2-phenylquinolinato-N,C 2′ )iridium ( III) (abbreviation: [Ir(pq) 3 ]), bis(2-phenylquinolinato-N
  • Rare earth metal complexes include tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac) 3 (Phen)]), and the like.
  • These compounds mainly emit green phosphorescence and have a peak emission wavelength between 500 nm and 600 nm. Also, an organometallic iridium complex having a pyrimidine skeleton is remarkably excellent in reliability or luminous efficiency.
  • organometallic iridium complexes having a pyrimidine skeleton examples include (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm) 2 (dibm)] ), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium (III) (abbreviation: [Ir(5mdppm) 2 (dpm)]), bis[4,6-di (naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(d1npm) 2 (dpm)]), and the like can be used.
  • organometallic iridium complexes having a pyrazine skeleton examples include (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium (III) (abbreviation: [Ir(tppr) 2 (acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr) 2 (dpm)]), (acetylacetonato)bis[2,3 -Bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq) 2 (acac)]) and the like can be used.
  • Organometallic iridium complexes having a pyridine skeleton include tris(1-phenylisoquinolinato-N,C2 ' )iridium(III) (abbreviation: [Ir(piq) 3 ]), bis(1-phenylisoquino linato-N,C2 ' )iridium(III) acetylacetonate (abbreviation: [Ir(piq) 2 (acac)]), and the like can be used.
  • rare earth metal complexes include tris(1,3-diphenyl-1,3-propanedionate)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM) 3 (Phen)]), tris[1- (2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline) europium (III) (abbreviation: [Eu(TTA) 3 (Phen)]) and the like can be used.
  • PtOEP 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrinplatinum(II) (abbreviation: PtOEP) or the like can be used.
  • an organometallic iridium complex having a pyrazine skeleton provides red light emission with chromaticity suitable for use in display devices.
  • a TADF material can be used for layer 111 .
  • a TADF material exemplified below can be used as a luminescent material.
  • Various known TADF materials can be used as the luminescent material without being limited to this.
  • a TADF material has a small difference between the S1 level and the T1 level, and can reverse intersystem crossing (up-convert) from a triplet excited state to a singlet excited state with a small amount of thermal energy. Thereby, a singlet excited state can be efficiently generated from a triplet excited state. Also, triplet excitation energy can be converted into luminescence.
  • an exciplex also called exciplex, exciplex, or Exciplex
  • an exciplex in which two kinds of substances form an excited state has an extremely small difference between the S1 level and the T1 level, and the triplet excitation energy is replaced by the singlet excitation energy. It functions as a TADF material that can be converted into
  • a phosphorescence spectrum observed at a low temperature may be used as an index of the T1 level.
  • a tangent line is drawn at the tail of the fluorescence spectrum on the short wavelength side
  • the energy of the wavelength of the extrapolated line is the S1 level
  • a tangent line is drawn at the tail of the phosphorescence spectrum on the short wavelength side
  • the extrapolation When the energy of the wavelength of the line is the T1 level, the difference between S1 and T1 is preferably 0.3 eV or less, more preferably 0.2 eV or less.
  • the S1 level of the host material is preferably higher than the S1 level of the TADF material.
  • the T1 level of the host material is preferably higher than the T1 level of the TADF material.
  • fullerene and its derivatives, acridine and its derivatives, eosin derivatives, etc. can be used as the TADF material.
  • Metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd) can also be used as TADF materials. can.
  • protoporphyrin-tin fluoride complex SnF2 (Proto IX)
  • mesoporphyrin-tin fluoride complex SnF2 (Meso IX)
  • hematoporphyrin-tin fluoride which have the following structural formulas complex (SnF 2 (Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF 2 (Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF 2 (OEP)), ethioporphyrin- Tin fluoride complex (SnF 2 (Etio I)), octaethylporphyrin-platinum chloride complex (PtCl 2 OEP), and the like can be used.
  • a heterocyclic compound having one or both of a ⁇ -electron-rich heteroaromatic ring and a ⁇ -electron-deficient heteroaromatic ring can be used as the TADF material.
  • the heterocyclic compound has a ⁇ -electron-rich heteroaromatic ring and a ⁇ -electron-deficient heteroaromatic ring, the heterocyclic compound has both high electron-transporting properties and high hole-transporting properties, which is preferable.
  • skeletons having a ⁇ -electron-deficient heteroaromatic ring a pyridine skeleton, a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and a triazine skeleton are particularly preferable because they are stable and reliable.
  • a benzofuropyrimidine skeleton, a benzothienopyrimidine skeleton, a benzofuropyrazine skeleton, and a benzothienopyrazine skeleton are preferred because they have high electron-withdrawing properties and good reliability.
  • an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton are stable and reliable. It is preferred to have A dibenzofuran skeleton is preferable as the furan skeleton, and a dibenzothiophene skeleton is preferable as the thiophene skeleton.
  • an indole skeleton As the pyrrole skeleton, an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarbazole skeleton, and a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferred.
  • a substance in which a ⁇ -electron-rich heteroaromatic ring and a ⁇ -electron-deficient heteroaromatic ring are directly bonded has both the electron-donating property of the ⁇ -electron-rich heteroaromatic ring and the electron-accepting property of the ⁇ -electron-deficient heteroaromatic ring. It is particularly preferable because it becomes stronger and the energy difference between the S1 level and the T1 level becomes smaller, so that thermally activated delayed fluorescence can be efficiently obtained.
  • An aromatic ring to which an electron-withdrawing group such as a cyano group is bonded may be used instead of the ⁇ -electron-deficient heteroaromatic ring.
  • an aromatic amine skeleton, a phenazine skeleton, or the like can be used as the ⁇ -electron-rich skeleton.
  • the ⁇ -electron-deficient skeleton includes a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or borantrene, and a nitrile such as benzonitrile or cyanobenzene.
  • An aromatic ring or heteroaromatic ring having a group or a cyano group, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, or the like can be used.
  • a ⁇ -electron-deficient skeleton and a ⁇ -electron-rich skeleton can be used in place of at least one of the ⁇ -electron-deficient heteroaromatic ring and the ⁇ -electron-rich heteroaromatic ring.
  • a material having a carrier-transport property can be used as the host material.
  • a material having a hole-transporting property, a material having an electron-transporting property, a substance exhibiting thermally-activated delayed fluorescence (TADF), a material having an anthracene skeleton, a mixed material, and the like can be used as the host material.
  • TADF thermally-activated delayed fluorescence
  • a material having an anthracene skeleton a mixed material, and the like
  • TADF thermally-activated delayed fluorescence
  • a material having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more can be suitably used as a material having a hole-transport property.
  • a material having a hole-transport property that can be used for the layer 112 can be used for the layer 111 .
  • a material having a hole-transport property that can be used for the hole-transport layer can be used for the layer 111 .
  • an electron-transporting material that can be used for the layer 113 can be used for the layer 111 .
  • a material having an electron-transporting property that can be used for the electron-transporting layer can be used for the layer 111 .
  • An organic compound having an anthracene skeleton can be used as the host material.
  • an organic compound having an anthracene skeleton is suitable. This makes it possible to realize a light-emitting device with good luminous efficiency and durability.
  • an organic compound having an anthracene skeleton an organic compound having a diphenylanthracene skeleton, particularly a 9,10-diphenylanthracene skeleton is preferable because it is chemically stable.
  • the host material has a carbazole skeleton because the hole injection/transport properties are enhanced.
  • the HOMO level is about 0.1 eV shallower than that of carbazole. is.
  • a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.
  • a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton, a substance having both a 9,10-diphenylanthracene skeleton and a benzocarbazole skeleton, and a substance having both a 9,10-diphenylanthracene skeleton and a dibenzocarbazole skeleton are It is preferable as a host material.
  • 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan abbreviation: 2mBnfPPA
  • 9-phenyl-10- ⁇ 4-( 9-phenyl-9H-fluoren-9-yl)biphenyl-4′-yl ⁇ anthracene abbreviation: FLPPA
  • 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene abbreviation: ⁇ N- ⁇ NPAnth
  • PCzPA 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole
  • CzPA 7-[4-[4-[4-(10-phenyl-9-anthracenyl)phenyl ]-9H-carbazole
  • CzPA 7-[4-[4-
  • CzPA, cgDBCzPA, 2mBnfPPA and PCzPA exhibit very good properties.
  • a TADF material can be used as the host material.
  • triplet excitation energy generated in the TADF material can be converted into singlet excitation energy by reverse intersystem crossing. Additionally, the excitation energy can be transferred to the luminescent material.
  • the TADF material acts as an energy donor and the luminescent material acts as an energy acceptor. This can increase the luminous efficiency of the light emitting device.
  • the S1 level of the TADF material is preferably higher than the S1 level of the fluorescent material.
  • the T1 level of the TADF material is preferably higher than the S1 level of the fluorescent material. Therefore, the T1 level of the TADF material is preferably higher than the T1 level of the fluorescent emitter.
  • a TADF material that emits light that overlaps the wavelength of the absorption band on the lowest energy side of the fluorescent light-emitting substance.
  • the fluorescent light-emitting substance has a protective group around the luminophore (skeleton that causes light emission) of the fluorescent light-emitting substance.
  • the protecting group is preferably a substituent having no ⁇ bond, preferably a saturated hydrocarbon.
  • an alkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted cyclo Examples include an alkyl group and a trialkylsilyl group having 3 to 10 carbon atoms, and it is more preferable to have a plurality of protecting groups.
  • Substituents that do not have a ⁇ -bond have poor carrier-transporting functions, and can increase the distance between the TADF material and the luminophore of the fluorescent emitter with little effect on carrier transport or carrier recombination. .
  • the luminophore refers to an atomic group (skeleton) that causes luminescence in a fluorescent light-emitting substance.
  • the luminophore preferably has a skeleton having a ⁇ bond, preferably contains an aromatic ring, and preferably has a condensed aromatic ring or a condensed heteroaromatic ring.
  • the condensed aromatic ring or condensed heteroaromatic ring includes a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, and the like.
  • a naphthalene skeleton, anthracene skeleton, fluorene skeleton, chrysene skeleton, triphenylene skeleton, tetracene skeleton, pyrene skeleton, perylene skeleton, coumarin skeleton, quinacridone skeleton, and naphthobisbenzofuran skeleton are preferred because of their high fluorescence quantum yield. .
  • TADF material that can be used as a light-emitting material can be used as a host material.
  • composition example 1 of mixed material A material in which a plurality of kinds of substances are mixed can be used as the host material.
  • a material having an electron-transporting property and a material having a hole-transporting property can be used as a mixed material.
  • composition example 2 of mixed material A material mixed with a phosphorescent substance can be used as the host material.
  • a phosphorescent light-emitting substance can be used as an energy donor that provides excitation energy to a fluorescent light-emitting substance when a fluorescent light-emitting substance is used as the light-emitting substance.
  • composition example 3 of mixed material A mixed material containing a material that forms an exciplex can be used as the host material.
  • a material in which the emission spectrum of the formed exciplex overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting substance can be used as the host material.
  • the drive voltage can be suppressed.
  • ExTET Exciplex-Triplet Energy Transfer
  • At least one of the materials that form an exciplex can be a phosphorescent substance. This makes it possible to take advantage of reverse intersystem crossing. Alternatively, triplet excitation energy can be efficiently converted into singlet excitation energy.
  • the HOMO level of the material having a hole-transporting property is higher than or equal to the HOMO level of the material having an electron-transporting property.
  • the LUMO level of the material having a hole-transporting property is preferably higher than or equal to the LUMO level of the material having an electron-transporting property. Accordingly, an exciplex can be efficiently formed.
  • the LUMO level and HOMO level of the material can be derived from the electrochemical properties (reduction potential and oxidation potential). Specifically, cyclic voltammetry (CV) measurements can be used to measure reduction and oxidation potentials.
  • an exciplex is performed by comparing, for example, the emission spectrum of a material having a hole-transporting property, the emission spectrum of a material having an electron-transporting property, and the emission spectrum of a mixed film in which these materials are mixed. can be confirmed by observing the phenomenon that the emission spectrum of each material shifts to a longer wavelength (or has a new peak on the longer wavelength side).
  • the transient photoluminescence (PL) of a material having a hole-transporting property, the transient PL of a material having an electron-transporting property, and the transient PL of a mixed film in which these materials are mixed are compared, and the transient PL lifetime of the mixed film is This can be confirmed by observing the difference in transient response, such as having a component with a longer lifetime than the transient PL lifetime of each material, or having a larger proportion of a delayed component.
  • the transient PL described above may be read as transient electroluminescence (EL).
  • the formation of an exciplex can also be confirmed. can be confirmed.
  • the configuration of the light emitting device 550 described in this embodiment can be applied to the light emitting device 550R(i,j), the light emitting device 550G(i,j), or the light emitting device 550B(i,j).
  • the code "550" used in the description of the light emitting device 550 is replaced with "550R(i,j)", “550G(i,j)” or “550B(i,j)” to 550R(i,j), light emitting device 550G(i,j) or light emitting device 550B(i,j).
  • the reference numerals attached to the elements constituting the light emitting device 550 can also be read appropriately.
  • the reference numeral “551” used in the description of the electrode 551 is replaced with “551R(i,j)”, “551G(i,j)” or “551B(i,j)”, and the electrode 551R(i,j) ), electrodes 551G (i, j), or electrodes 551B (i, j).
  • the code "104" used in the description of the layer 104 is replaced with “104R(i,j)", “104G(i,j)” or “104B(i,j)", and the layer 104R(i,j) ), layer 104G(i,j) or layer 104B(i,j).
  • a light-emitting device 550 described in this embodiment includes an electrode 551 , an electrode 552X, a unit 103 , and a layer 104 .
  • Electrode 552X comprises an area overlapping electrode 551
  • unit 103 comprises an area sandwiched between electrode 551 and electrode 552X.
  • Layer 104 also comprises a region sandwiched between electrode 551 and unit 103 . Note that, for example, the configuration described in Embodiment 2 can be used for the unit 103 .
  • Electrode 551 For example, a conductive material can be used for electrode 551 . Specifically, a film containing a metal, an alloy, or a conductive compound can be used as the electrode 551 in a single layer or multiple layers.
  • a film that efficiently reflects light can be used for the electrode 551 .
  • an alloy containing silver, copper, or the like, an alloy containing silver, palladium, or the like, or a metal film such as aluminum can be used for the electrode 551 .
  • a metal film that transmits part of the light and reflects the other part of the light can be used for the electrode 551 .
  • a microresonator structure microcavity
  • light with a predetermined wavelength can be extracted more efficiently than other light.
  • light with a narrow half width of the spectrum can be extracted. Or you can take out bright colors of light.
  • a film that transmits visible light can be used for the electrode 551 .
  • a metal film, an alloy film, a conductive oxide film, or the like that is thin enough to transmit light can be used as the electrode 551 in a single layer or stacked layers.
  • a material having a work function of 4.0 eV or more can be suitably used for the electrode 551 .
  • a conductive oxide containing indium can be used.
  • indium oxide, indium oxide-tin oxide (abbreviation: ITO), indium oxide-tin oxide containing silicon or silicon oxide (abbreviation: ITSO), indium oxide-zinc oxide, tungsten oxide and zinc oxide are included.
  • IWZO Indium oxide
  • a conductive oxide containing zinc can be used.
  • zinc oxide, gallium-added zinc oxide, aluminum-added zinc oxide, or the like can be used.
  • gold Au
  • platinum Pt
  • nickel Ni
  • tungsten W
  • Cr chromium
  • Mo molybdenum
  • iron Fe
  • Co cobalt
  • Cu copper
  • palladium Pd
  • a nitride of a metal material eg, titanium nitride
  • graphene can be used.
  • Layer 104 a material with hole injection properties can be used for layer 104 .
  • Layer 104 can also be referred to as a hole injection layer.
  • an electron-accepting substance can be used for the layer 104 .
  • a composite material containing multiple substances can be used for layer 104 . This makes it easier to inject holes from the electrode 551, for example. Alternatively, the driving voltage of the light emitting device can be reduced.
  • Electrode-accepting substance Organic compounds and inorganic compounds can be used as the electron-accepting substance.
  • a substance having an electron-accepting property can extract electrons from an adjacent hole-transporting layer or a material having a hole-transporting property by application of an electric field.
  • a compound having an electron-withdrawing group (a halogen group or a cyano group) can be used as an electron-accepting substance.
  • an electron-accepting organic compound is easily vapor-deposited and easily formed into a film. Thereby, the productivity of the light-emitting device can be improved.
  • a compound such as HAT-CN in which an electron-withdrawing group is bound to a condensed aromatic ring having a plurality of heteroatoms is thermally stable and preferable.
  • Radialene derivatives having an electron-withdrawing group are preferable because they have very high electron-accepting properties.
  • Molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, or the like can be used as the electron-accepting substance.
  • phthalocyanine-based complex compounds such as phthalocyanine (abbreviation: H 2 Pc) and copper phthalocyanine (CuPc), 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis ⁇ 4-[bis(3-methylphenyl)amino]phenyl ⁇ -N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviation: A compound having an aromatic amine skeleton such as DNTPD) can be used.
  • DPAB 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl
  • DPAB 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl
  • DPAB 4,4
  • Polymers such as poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonic acid) (PEDOT/PSS) can also be used.
  • a composite material containing an electron-accepting substance and a hole-transporting material can be used for the layer 104 .
  • a material with a large work function but also a material with a small work function can be used for the electrode 551 .
  • the material used for the electrode 551 can be selected from a wide range of materials without depending on the work function.
  • compounds with an aromatic amine skeleton, carbazole derivatives, aromatic hydrocarbons, aromatic hydrocarbons with a vinyl group, polymer compounds (oligomers, dendrimers, polymers, etc.) can be used as hole transporters in composite materials. It can be used for materials having properties.
  • a material having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more can be suitably used as a material having a hole-transport property of the composite material.
  • a substance having a relatively deep HOMO level can be suitably used as a hole-transporting material of the composite material.
  • the HOMO level is preferably ⁇ 5.7 eV or more and ⁇ 5.4 eV or less. This facilitates injection of holes into the unit 103 . Also, the injection of holes into the layer 112 can be facilitated. Also, the reliability of the light-emitting device can be improved.
  • Examples of compounds having an aromatic amine skeleton include N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N- (4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis ⁇ 4-[bis(3-methylphenyl)amino]phenyl ⁇ -N,N'-diphenyl-( 1,1′-biphenyl)-4,4′-diamine (abbreviation: DNTPD), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), etc. can be used.
  • DTDPPA 4,4'-bis[N- (4-diphenylaminophenyl)-N-phenylamino]b
  • Carbazole derivatives include, for example, 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9- phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]- 9-phenylcarbazole (abbreviation: PCzPCN1), 4,4′-di(N-carbazolyl)biphenyl (abbreviation: CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB) ), 9-[4-(10-phenyl-9-anthracenyl
  • aromatic hydrocarbons examples include 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl) anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9, 10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl) -1-naphthyl)anthracene (abbreviation: DM
  • aromatic hydrocarbons having a vinyl group examples include 4,4′-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi), 9,10-bis[4-(2,2- Diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA) and the like can be used.
  • DPVBi 4,4′-bis(2,2-diphenylvinyl)biphenyl
  • DPVPA 9,10-bis[4-(2,2- Diphenylvinyl)phenyl]anthracene
  • polymer compounds include poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4- ⁇ N'-[4- (4-diphenylamino)phenyl]phenyl-N′-phenylamino ⁇ phenyl)methacrylamide] (abbreviation: PTPDMA), poly[N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl ) benzidine] (abbreviation: Poly-TPD), etc. can be used.
  • PVK poly(N-vinylcarbazole)
  • PVTPA poly(4-vinyltriphenylamine)
  • PTPDMA poly[N-(4- ⁇ N'-[4- (4-diphenylamino)phenyl]phenyl-N′-phenylamino ⁇ phenyl)methacrylamide]
  • a substance having any one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton can be suitably used as a hole-transporting material of the composite material.
  • a substance comprising an aromatic amine having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine having a naphthalene ring, or an aromatic monoamine having a 9-fluorenyl group bonded to the nitrogen of the amine via an arylene group. can be used for materials having hole-transport properties in composite materials. Note that the reliability of the light-emitting device can be improved by using a substance having an N,N-bis(4-biphenyl)amino group.
  • BnfABP N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine
  • BnfABP N,N-bis( 4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine
  • BBABnf 4,4′-bis(6-phenylbenzo[b]naphtho[1,2 -d]furan-8-yl)-4′′-phenyltriphenylamine
  • BnfBB1BP N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6- amine
  • BBABnf(6) N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine
  • [Configuration example 2 of composite material] For example, a composite material containing an electron-accepting substance, a hole-transporting material, and an alkali metal fluoride or alkaline earth metal fluoride is used as the hole-injecting material. can be done. In particular, a composite material in which the atomic ratio of fluorine atoms is 20% or more can be preferably used. Thereby, the refractive index of the layer 104 can be lowered. Alternatively, a low refractive index layer can be formed inside the light emitting device. Alternatively, the external quantum efficiency of the light emitting device can be improved.
  • the configuration of the light emitting device 550 described in this embodiment can be applied to the light emitting device 550R(i,j), the light emitting device 550G(i,j), or the light emitting device 550B(i,j).
  • the code "550" used in the description of the light emitting device 550 is replaced with "550R(i,j)", “550G(i,j)” or “550B(i,j)” to 550R(i,j), light emitting device 550G(i,j) or light emitting device 550B(i,j).
  • the reference numerals attached to the elements constituting the light emitting device 550 can also be read appropriately.
  • the code "552X” used in the description of the electrode 552X is replaced with “552R (i, j)", “552G (i, j)” or “552B (i, j)", and the electrode 552R (i, j) ), electrodes 552G(i,j) or electrodes 552B(i,j).
  • a light-emitting device 550 described in this embodiment includes an electrode 551 , an electrode 552X, a unit 103 , and a layer 105 .
  • Electrode 552X comprises an area overlapping electrode 551
  • unit 103 comprises an area sandwiched between electrode 551 and electrode 552X.
  • Layer 105 also comprises a region sandwiched between unit 103 and electrode 552X. Note that, for example, the configuration described in Embodiment 2 can be used for the unit 103 .
  • a conductive material can be used for electrode 552X.
  • materials including metals, alloys, or conductive compounds can be used for electrode 552X in a single layer or multiple layers.
  • the material that can be used for the electrode 551 described in Embodiment 3 can be used for the electrode 552X.
  • a material whose work function is smaller than that of the electrode 551 can be suitably used for the electrode 552X.
  • a material having a work function of 3.8 eV or less is preferable.
  • an element belonging to Group 1 of the periodic table, an element belonging to Group 2 of the periodic table, a rare earth metal, and an alloy containing these can be used for the electrode 552X.
  • lithium (Li), cesium (Cs), etc., magnesium (Mg), calcium (Ca), strontium (Sr), etc., europium (Eu), ytterbium (Yb), etc. and alloys containing these (MgAg, AlLi) can be used for electrode 552X.
  • Layer 105 a material with electron injection properties can be used for the layer 105 .
  • Layer 105 can also be referred to as an electron injection layer.
  • a substance having a donor property can be used for the layer 105 .
  • a material in which a substance having a donor property and a material having an electron-transporting property are combined can be used for the layer 105 .
  • an electride can be used for layer 105 . This makes it easier to inject electrons from the electrode 552X, for example.
  • the material used for the electrode 552X can be selected from a wide range of materials without depending on the work function. Specifically, Al, Ag, ITO, indium oxide-tin oxide containing silicon or silicon oxide, or the like can be used for the electrode 552X.
  • the driving voltage of the light emitting device can be reduced.
  • alkali metals, alkaline earth metals, rare earth metals, or compounds thereof can be used as the substance having a donor property.
  • an organic compound such as tetrathianaphthacene (abbreviation: TTN), nickelocene, decamethylnickelocene, or the like can be used as a substance having a donor property.
  • Alkali metal compounds include lithium oxide, lithium fluoride (LiF), cesium fluoride (CsF), lithium carbonate, cesium carbonate, 8-hydroxyquinolinato-lithium (abbreviation : Liq), etc. can be used.
  • Calcium fluoride (CaF 2 ) and the like can be used as alkaline earth metal compounds (including oxides, halides, and carbonates).
  • a material in which a plurality of kinds of substances are combined can be used as the material having an electron-injecting property.
  • a substance having a donor property and a material having an electron transport property can be used for a composite material.
  • a metal complex or an organic compound having a ⁇ -electron-deficient heteroaromatic ring skeleton can be used as a material having an electron-transport property.
  • an electron-transporting material that can be used for the unit 103 can be used for the composite material.
  • a microcrystalline alkali metal fluoride and a material having an electron-transporting property can be used for the composite material.
  • a microcrystalline alkaline earth metal fluoride and a material having an electron-transporting property can be used for the composite material.
  • a composite material containing 50 wt % or more of an alkali metal fluoride or an alkaline earth metal fluoride can be preferably used.
  • a composite material containing an organic compound having a bipyridine skeleton can be preferably used. Thereby, the refractive index of the layer 105 can be lowered. Alternatively, the external quantum efficiency of the light emitting device can be improved.
  • a composite material including a first organic compound with a lone pair of electrons and a first metal can be used for layer 105 . Further, it is preferable that the sum of the number of electrons of the first organic compound and the number of electrons of the first metal is an odd number. Further, the molar ratio of the first metal to 1 mol of the first organic compound is preferably 0.1 or more and 10 or less, more preferably 0.2 or more and 2 or less, and still more preferably 0.2 or more and 0.8 or less. be.
  • the first organic compound having the lone pair of electrons can interact with the first metal to form a singly occupied molecular orbital (SOMO).
  • SOMO singly occupied molecular orbital
  • the spin density measured using an electron spin resonance method is preferably 1 ⁇ 10 16 spins/cm 3 or more, more preferably 5 ⁇ 10 16 spins/cm 3 or more, and still more preferably Composite materials that are greater than or equal to 1 ⁇ 10 17 spins/cm 3 can be used for layer 105 .
  • Organic compound with lone pair of electrons materials with electron-transporting properties can be used in organic compounds with lone pairs of electrons.
  • a compound having an electron-deficient heteroaromatic ring can be used.
  • a compound having at least one of a pyridine ring, diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and triazine ring can be used. Thereby, the driving voltage of the light emitting device can be reduced.
  • the lowest unoccupied molecular orbital (LUMO) level of the organic compound having an unshared electron pair is preferably ⁇ 3.6 eV or more and ⁇ 2.3 eV or less.
  • the HOMO level and LUMO level of an organic compound can be estimated by CV (cyclic voltammetry), photoelectron spectroscopy, light absorption spectroscopy, inverse photoelectron spectroscopy, or the like.
  • BPhen 4,7-diphenyl-1,10-phenanthroline
  • NBPhen 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline
  • HATNA diquinoxalino [2,3-a:2′,3′-c]phenazine
  • TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3 , 5-triazine
  • copper phthalocyanine can be used in organic compounds with lone pairs of electrons. Note that the number of electrons in copper phthalocyanine is an odd number.
  • group metals aluminum (Al) and indium (In) are odd numbered groups in the periodic table.
  • Elements of Group 11 have a lower melting point than Group 7 or Group 9 elements, and are suitable for vacuum deposition. Ag is particularly preferred because of its low melting point.
  • the layer 105 may be made of a composite material of the first metal and the first organic compound, which are even-numbered groups in the periodic table. can be done.
  • Iron (Fe) a Group 8 metal, is an even group in the periodic table.
  • Electrode For example, a material in which electrons are added to a mixed oxide of calcium and aluminum at a high concentration, or the like can be used as an electron-injecting material.
  • FIG. 5A is a top view illustrating the structure of a display device of one embodiment of the present invention
  • FIG. 5B is a perspective view illustrating part of FIG. 5A.
  • a display device 700 described in this embodiment has a region 231, a functional layer 520, and a functional layer 510 (see FIGS. 5A, 5B, and 6A).
  • Region 231 comprises a set of pixels 703(i,j) (see FIG. 5A).
  • the area 231 has a function of displaying image information.
  • region 231 comprises a set of 500 or more pixels per inch. It also comprises a group of pixels of 1000 or more, preferably 5000 or more, more preferably 10000 or more pixels per inch. As a result, for example, when used in a goggle-type display device, the screen-door effect can be reduced.
  • the region 231 comprises a plurality of pixels.
  • the region 231 has, for example, 7600 or more pixels in the row direction and 4300 or more pixels in the column direction. Specifically, 7680 pixels are provided in the row direction and 4320 pixels are provided in the column direction. Thereby, a fine image can be displayed.
  • a set of pixels 703(i,j) comprises pixels 702R(i,j) and pixels 702G(i,j) (see FIG. 5B). Also, the set of pixels 703(i,j) comprises pixels 702B(i,j).
  • each of the plurality of pixels can be called a sub-pixel.
  • a set of sub-pixels can be called a pixel.
  • the colors displayed by the plurality of pixels can be subjected to additive color mixture or subtractive color mixture.
  • hues of colors that cannot be displayed by individual pixels can be displayed.
  • a pixel 702B (i, j) displaying blue, a pixel 702G (i, j) displaying green, and a pixel 702R (i, j) displaying red are used as the pixel 703 (i, j). be able to. Also, each of the pixel 702B(i,j), the pixel 702G(i,j), and the pixel 702R(i,j) can be called a sub-pixel.
  • a pixel displaying white or the like can be added to the above set and used for the pixel 703 (i, j).
  • a pixel that displays cyan, a pixel that displays magenta, and a pixel that displays yellow can be used for the pixel 703 (i, j).
  • a pixel that emits infrared rays can be added to the above set and used for the pixel 703(i,j).
  • a pixel that emits light including light with a wavelength of 650 nm to 1000 nm can be used as the pixel 703(i, j).
  • Pixel 702R(i, j) comprises light emitting device 550R(i,j) and pixel circuit 530R(i,j) (see FIG. 6A).
  • Light emitting device 550R(i,j) is electrically connected to pixel circuit 530R(i,j). For example, they are connected via the opening 591R.
  • the pixel circuit 530R (i, j) is supplied with the first image signal.
  • Pixel 702G(i, j) comprises light emitting device 550G(i,j) and pixel circuit 530G(i,j).
  • Light emitting device 550G(i,j) is electrically connected to pixel circuit 530G(i,j). For example, they are connected via the opening 591G.
  • the pixel circuit 530G (i, j) is supplied with the second image signal.
  • Functional layer 520 includes pixel circuits 530G(i,j) and pixel circuits 530R(i,j).
  • Functional layer 520 is sandwiched between light emitting device 550R(i,j) and functional layer 510 . Functional layer 520 is also sandwiched between light emitting device 550G(i,j) and functional layer 510 .
  • Functional layer 510 includes drive circuit SD. Also, the functional layer 510 includes a drive circuit GD. For example, a single crystal silicon substrate can be used for the functional layer 510 .
  • a drive circuit SD generates a first image signal and a second image signal.
  • the drive circuit SD can be arranged over the functional layer 520 including the pixel circuits 530R(i, j) and the pixel circuits 530G(i, j). Also, the area outside the area 231 for displaying image information can be reduced. Also, the distance between the pixel circuit 530R (i, j) and the drive circuit SD can be shortened. Also, the transfer of the first image signal can be made without delay. As a result, it is possible to provide a novel display device with excellent convenience, usefulness, or reliability.
  • the drive circuit SD has a function of supplying an image signal and a control signal, the control signal including a first level and a second level.
  • the drive circuit SD is electrically connected to the conductive film S1g(j) to supply image signals, and electrically connected to the conductive film S2g(j) to supply control signals (see FIG. 7).
  • the drive circuit GD has a function of supplying a first selection signal and a second selection signal.
  • the drive circuit GD is electrically connected to the conductive film G1(i) to supply a first selection signal, and is electrically connected to the conductive film G2(i) to supply a second selection signal.
  • the pixel circuit 530G(i, j) is supplied with the first selection signal, and the pixel circuit 530G(i,j) acquires the image signal based on the first selection signal.
  • the conductive film G1(i) can be used to supply the first select signal (see FIG. 7).
  • an image signal can be supplied using the conductive film S1g(j). Note that the operation of supplying the first selection signal and causing the pixel circuit 530G(i, j) to acquire the image signal can be referred to as “writing”.
  • the pixel circuit 530G(i, j) includes a switch SW21, a switch SW22, a transistor M21, a capacitor C21 and a node N21 (see FIG. 7). Also, the pixel circuit 530G(i, j) includes a node N22, a capacitor C22 and a switch SW23.
  • the transistor M21 has a gate electrode electrically connected to the node N21, a first electrode electrically connected to the light emitting device 550G(i,j), and a second electrode electrically connected to the conductive film ANO. electrodes.
  • the switch SW21 has a first terminal electrically connected to the node N21, a second terminal electrically connected to the conductive film S1g(j), and based on the potentials of the conductive film G1(i), and a gate electrode having a function of controlling a conducting state or a non-conducting state.
  • the switch SW22 has a first terminal electrically connected to the conductive film S2g(j) and a gate electrode having a function of controlling a conductive state or a non-conductive state based on the potential of the conductive film G2(i). , provided.
  • Capacitor C21 includes a conductive film electrically connected to node N21 and a conductive film electrically connected to the second electrode of switch SW22.
  • the image signal can be stored in the node N21.
  • the potential of the node N21 can be changed using the switch SW22.
  • the intensity of light emitted by the light emitting device 550G(i,j) can be controlled using the potential of the node N21.
  • a bottom-gate transistor or a top-gate transistor can be used for the functional layer 520 .
  • a transistor can be used as a switch.
  • the transistor includes a semiconductor film 508, a conductive film 504, a conductive film 507A, and a conductive film 507B (see FIG. 6B).
  • a transistor is formed, for example, on the insulating film 501C.
  • the semiconductor film 508 includes a region 508A electrically connected to the conductive film 507A and a region 508B electrically connected to the conductive film 507B.
  • Semiconductor film 508 comprises region 508C between regions 508A and 508B.
  • the conductive film 504 has a region overlapping with the region 508C, and the conductive film 504 functions as a gate electrode.
  • the insulating film 506 has a region sandwiched between the semiconductor film 508 and the conductive film 504 .
  • the insulating film 506 has a function of a gate insulating film.
  • the conductive film 507A has one of the function of the source electrode and the function of the drain electrode, and the conductive film 507B has the other of the function of the source electrode and the function of the drain electrode.
  • the conductive film 507A is electrically connected to the conductive film 512A
  • the conductive film 507B is electrically connected to the conductive film 512B.
  • the conductive film 524 can be used for a transistor.
  • the conductive film 524 has a region that sandwiches the semiconductor film 508 with the conductive film 504 .
  • the conductive film 524 has a function of a second gate electrode.
  • the insulating film 501D is sandwiched between the semiconductor film 508 and the conductive film 524 and functions as a second gate insulating film.
  • the insulating film 518 covers the transistor, and the insulating film 501C is sandwiched between the insulating films 501B and 501D.
  • the insulating film 516 includes an insulating film 516A and an insulating film 516B.
  • a semiconductor film used for a driver circuit transistor can be formed in the step of forming the semiconductor film used for the pixel circuit transistor.
  • a semiconductor film having the same composition as a semiconductor film used for a transistor in a pixel circuit can be used for a driver circuit.
  • a semiconductor containing a Group 14 element can be used for the semiconductor film 508 .
  • a semiconductor containing silicon can be used for the semiconductor film 508 .
  • Hydroated amorphous silicon can be used for semiconductor film 508 .
  • microcrystalline silicon or the like can be used for the semiconductor film 508 . This makes it possible to provide a functional panel with less display unevenness than a functional panel using polysilicon for the semiconductor film 508, for example. Alternatively, it is easy to increase the size of the function panel.
  • polysilicon can be used for the semiconductor film 508 .
  • LTPS low temperature poly silicon
  • the field-effect mobility of the transistor can be higher than that of a transistor using amorphous silicon hydride for the semiconductor film 508, for example.
  • driving capability can be higher than that of a transistor using hydrogenated amorphous silicon for the semiconductor film 508, for example.
  • the aperture ratio of a pixel can be improved as compared with a transistor using hydrogenated amorphous silicon for the semiconductor film 508 .
  • the reliability of the transistor can be higher than that of a transistor using hydrogenated amorphous silicon for the semiconductor film 508 .
  • the temperature required for manufacturing a transistor can be lower than, for example, a transistor using single crystal silicon.
  • a semiconductor film used for a transistor in a driver circuit can be formed in the same process as a semiconductor film used for a transistor in a pixel circuit.
  • the driver circuit can be formed over the same substrate as the substrate forming the pixel circuit. Alternatively, the number of parts constituting the electronic device can be reduced.
  • Single crystal silicon can be used for the semiconductor film 508 .
  • the definition can be improved, for example, as compared with a functional panel using hydrogenated amorphous silicon for the semiconductor film 508 .
  • smart glasses or head-mounted displays can be provided.
  • a metal oxide can be used for the semiconductor film 508 .
  • the pixel circuit can hold an image signal for a longer time than, for example, a pixel circuit using a transistor whose semiconductor film is made of silicon.
  • the selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once a minute, while suppressing flicker. As a result, fatigue accumulated in the user of the information processing apparatus can be reduced. In addition, power consumption associated with driving can be reduced.
  • a transistor using an oxide semiconductor can be used.
  • an oxide semiconductor containing indium, an oxide semiconductor containing indium, gallium, and zinc, or an oxide semiconductor containing indium, zinc, and tin can be used for the semiconductor film.
  • a transistor whose off-state leakage current is smaller than that of a transistor using silicon for a semiconductor film can be used.
  • a transistor including an oxide semiconductor for a semiconductor film can be used for a switch or the like.
  • the potential of the floating node can be held for a longer time than a circuit using a transistor using silicon as a switch.
  • a transistor using a metal oxide for a semiconductor film (also referred to as an OS transistor) has significantly higher field-effect mobility than a transistor using amorphous silicon.
  • an OS transistor has extremely low source-drain leakage current (hereinafter also referred to as an off-state current) in an off state, and can retain charge accumulated in a capacitor connected in series with the transistor for a long time. is possible. Further, by using the OS transistor, power consumption of the display device can be reduced.
  • the off current value of the OS transistor per 1 ⁇ m of channel width at room temperature is 1 aA (1 ⁇ 10 ⁇ 18 A) or less, 1 zA (1 ⁇ 10 ⁇ 21 A) or less, or 1 yA (1 ⁇ 10 ⁇ 24 A) or less.
  • the off current value of the Si transistor per 1 ⁇ m channel width at room temperature is 1 fA (1 ⁇ 10 ⁇ 15 A) or more and 1 pA (1 ⁇ 10 ⁇ 12 A) or less. Therefore, it can be said that the off-state current of the OS transistor is about ten digits lower than the off-state current of the Si transistor.
  • the amount of current flowing through the light emitting device it is necessary to increase the amount of current flowing through the light emitting device.
  • the OS transistor when the transistor operates in the saturation region, the OS transistor can reduce the change in the source-drain current with respect to the change in the gate-source voltage as compared with the Si transistor. Therefore, by applying an OS transistor as a drive transistor included in a pixel circuit, the current flowing between the source and the drain can be finely determined according to the change in the voltage between the gate and the source. can be controlled. Therefore, it is possible to increase the gradation in the pixel circuit.
  • the OS transistor flows a more stable current (saturation current) than the Si transistor even when the source-drain voltage gradually increases. be able to. Therefore, by using the OS transistor as the driving transistor, a stable current can be supplied to the light-emitting device even if the current-voltage characteristics of the light-emitting device including the EL material are varied. That is, when the OS transistor operates in the saturation region, even if the source-drain voltage is increased, the source-drain current hardly changes, so that the light emission luminance of the light-emitting device can be stabilized.
  • an OS transistor as a driving transistor included in a pixel circuit, it is possible to suppress black floating, increase emission luminance, provide multiple gradations, and suppress variations in light emitting devices. can be planned.
  • ⁇ Structure Example 3 of Semiconductor Film 508>> compound semiconductors can be used as semiconductors for transistors. Specifically, a semiconductor containing gallium arsenide can be used.
  • organic semiconductors can be used as semiconductors in transistors.
  • an organic semiconductor containing polyacenes or graphene can be used for the semiconductor film.
  • one of the transistors included in the pixel circuit functions as a transistor for controlling current flowing through the light emitting device and can be called a driving transistor.
  • One of the source and drain of the driving transistor is electrically connected to the pixel electrode of the light emitting device.
  • An LTPS transistor is preferably used as the driving transistor. This makes it possible to increase the current flowing through the light emitting device in the pixel circuit.
  • another transistor included in the pixel circuit functions as a switch for controlling selection/non-selection of the pixel and can also be called a selection transistor.
  • the gate of the selection transistor is electrically connected to the gate line, and one of the source and the drain is electrically connected to the source line (signal line).
  • An OS transistor is preferably used as the selection transistor.
  • the structure of the transistor used in the display panel may be selected as appropriate according to the size of the screen of the display panel.
  • a single-crystal Si transistor is used as a display panel transistor, it can be applied to a screen size with a diagonal size of 0.1 inch or more and 3 inches or less.
  • an LTPS transistor is used as a display panel transistor, it can be applied to a screen having a diagonal size of 0.1 inch or more and 30 inches or less, preferably 1 inch or more and 30 inches or less.
  • LTPO When LTPO is used for the display panel, it can be applied to a screen size with a diagonal size of 0.1 inch or more and 50 inches or less, preferably 1 inch or more and 50 inches or less. Further, when an OS transistor is used as a transistor of a display panel, it can be applied to a screen with a diagonal size of 0.1 inch or more and 200 inches or less, preferably 50 inches or more and 100 inches or less.
  • the LTPS transistor uses a laser crystallizer in the manufacturing process, it is difficult to cope with an increase in size (typically, a screen size exceeding 30 inches in diagonal size).
  • the OS transistor is free from restrictions on the use of a laser crystallization apparatus or the like in the manufacturing process, or can be manufactured at a relatively low process temperature (typically 450° C. or lower), and thus has a relatively large area. (Typically, it is possible to correspond to a display panel of 50 inches or more and 100 inches or less in diagonal size).
  • LTPO is applied to the size of the display panel in the region between the case where the LTPS transistor is used and the case where the OS transistor is used (typically, the diagonal size is 1 inch or more and 50 inches or less). becomes possible.
  • the light emitting device 550G(i, j) is electrically connected to the pixel circuit 530G(i,j) (see FIG. 7). Note that the light emitting device 550G(i, j) operates based on the potential of the node N21.
  • Light emitting device 550G(i,j) comprises electrodes 551G(i,j) and electrodes 552G(i,j).
  • the electrode 551G(i, j) is electrically connected to the pixel circuit 530G(i, j), and the electrode 552G(i, j) is electrically connected to the conductive film VCOM2.
  • an organic electroluminescence element for example, an organic electroluminescence element, an inorganic electroluminescence element, a light-emitting diode, a QDLED (Quantum Dot LED), or the like can be used for the light-emitting device 550G(i,j).
  • a QDLED Quantum Dot LED
  • the display device 700 also has a terminal 519B and a conductive film VCOM2 (see FIG. 5A).
  • Terminal 519B is electrically connected to functional layer 510 .
  • the display device can transmit/receive signals to/from the outside of the display device through the terminal 519B.
  • the display device 700 also includes an insulating film 705 and a base material 770 (see FIG. 6A).
  • the insulating film 705 is sandwiched between the functional layer 520 and the base material 770, and the insulating film 705 has a function of bonding the functional layer 520 and the base material 770 together.
  • light emitting device 550R(i,j) and light emitting device 550G(i,j) are sandwiched between substrate 770 and functional layer 520.
  • FIG. The display device also displays information through the substrate 770 (see FIG. 6A).
  • the light emitting device 550G(i,j) emits light in a direction where the functional layer 520 is not arranged.
  • the light-emitting device 550G(i, j) can be called a top-emission light-emitting device.
  • FIG. 8 is a block diagram illustrating the structure of a display device of one embodiment of the present invention.
  • FIG. 9 is a block diagram illustrating the configuration of the display section shown in FIG. 8.
  • FIG. 9 is a block diagram illustrating the configuration of the display section shown in FIG. 8.
  • FIG. 10 is a block diagram illustrating the structure of a display device of one embodiment of the present invention.
  • FIG. 11 is a circuit diagram illustrating the configuration of the pixel shown in FIG. 10.
  • FIG. 11 is a circuit diagram illustrating the configuration of the pixel shown in FIG. 10.
  • FIG. 12 is a block diagram illustrating the structure of a display device of one embodiment of the present invention.
  • FIG. 13A is a flowchart relating to the correction method
  • FIG. 13B is a schematic diagram explaining the correction method.
  • FIG. 8 shows a block diagram for explaining each configuration of the display device 10.
  • the display device has a drive circuit 40 , a functional circuit 50 and a display section 60 .
  • the drive circuit 40 has, for example, a gate driver 41 and a source driver 42 .
  • the gate driver 41 has a function of driving a plurality of gate lines GL for outputting signals to the pixel circuits 62R, 62G, 62B.
  • the source driver 42 has a function of driving a plurality of source lines SL for outputting signals to the pixel circuits 62R, 62G, 62B.
  • the drive circuit 40 supplies voltages for display by the pixel circuits 62R, 62G, and 62B to the pixel circuits 62R, 62G, and 62B via a plurality of wirings.
  • the functional circuit 50 has a CPU 51, and the CPU 51 can be used for arithmetic processing of data.
  • the CPU 51 also has a CPU core 53 .
  • the CPU core 53 has a flip-flop 80 for temporarily holding data used for arithmetic processing.
  • the flip-flop 80 has a plurality of scan flip-flops 81 , and each scan flip-flop 81 is electrically connected to a backup circuit 82 provided in the display section 60 .
  • the flip-flop 80 inputs and outputs scan flip-flop data (backup data) to and from a backup circuit 82 .
  • ⁇ Display unit 60>> 9 and 8 configuration examples of the arrangement of the backup circuit 82 and the pixel circuits 62R, 62G, and 62B, which are sub-pixels, in the display section 60 will be described.
  • FIG. 9 illustrates a configuration in which a plurality of pixels 61 are arranged in a matrix in the display section 60 .
  • the pixel 61 has a backup circuit 82 in addition to pixel circuits 62R, 62G, and 62B.
  • both the backup circuit 82 and the pixel circuits 62R, 62G, and 62B can be configured with OS transistors, and therefore can be arranged in the same pixel.
  • the display unit 60 has a plurality of pixels 61 provided with pixel circuits 62R, 62G, 62B and a backup circuit .
  • the backup circuit 82 does not necessarily need to be arranged in the pixel 61, which is the repeating unit, as described with reference to FIG. They can be freely arranged according to the shape of the display section 60, the shapes of the pixel circuits 62R, 62G, and 62B, and the like.
  • FIG. 10 is a block diagram schematically showing a configuration example of a display device 10 which is a display device of one embodiment of the present invention.
  • the display device 10 has a layer 20 and a layer 30 , and the layer 30 can be laminated above the layer 20 , for example. Between layers 20 and 30 there may be an interlayer insulator or a conductor for making electrical connections between the different layers.
  • a transistor provided in the layer 20 can be, for example, a transistor including silicon in a channel formation region (also referred to as a Si transistor), for example, a transistor including single crystal silicon in a channel formation region.
  • a transistor including single crystal silicon in a channel formation region is used as the transistor provided in the layer 20
  • the on current of the transistor can be increased. Therefore, the circuit included in the layer 20 can be driven at high speed, which is preferable.
  • the Si transistor can be formed by microfabrication such that the channel length is 3 nm to 10 nm
  • the display device 10 can be provided with an accelerator such as a CPU or GPU, an application processor, and the like.
  • Layer 20 is provided with drive circuitry 40 and functional circuitry 50 .
  • the Si transistors of layer 20 can increase the on-current of the transistors. Therefore, each circuit can be driven at high speed.
  • the drive circuit 40 has a gate line drive circuit, a source line drive circuit, and the like for driving the pixel circuits 62R, 62G, and 62B.
  • the drive circuit 40 has, for example, a gate line drive circuit and a source line drive circuit for driving the pixels 61 of the display section 60 .
  • the drive circuit 40 includes an LVDS (Low Voltage Differential Signaling) circuit or a D/A (Digital to Analog) conversion circuit having a function as an interface for receiving data such as image data from the outside of the display device 10. may have.
  • the Si transistors of layer 20 can increase the on-current of the transistors.
  • the channel length or channel width of the Si transistor may be varied according to the operating speed of each circuit.
  • the transistors provided in layer 30 may be OS transistors, for example.
  • OS transistor a transistor having an oxide containing at least one of indium, element M (element M is aluminum, gallium, yttrium, or tin), and zinc in a channel formation region is preferably used.
  • Such an OS transistor has a very low off-state current. Therefore, it is particularly preferable to use an OS transistor as a transistor provided in a pixel circuit included in a display portion because analog data written to the pixel circuit can be held for a long time.
  • the layer 30 is provided with a display section 60 provided with a plurality of pixels 61 .
  • the pixel 61 is provided with pixel circuits 62R, 62G, and 62B whose emission of red, green, and blue is controlled.
  • Pixel circuits 62 R, 62 G, and 62 B have functions as sub-pixels of pixel 61 . Since the pixel circuits 62R, 62G, and 62B have OS transistors, analog data written to the pixel circuits can be retained for a long period of time.
  • a backup circuit 82 is provided for each of the pixels 61 included in the layer 30 . Note that the backup circuit may be called a storage circuit or a memory circuit. Also, the backup circuit inputs/outputs data (backup data BD) of the scan flip-flops to/from the flip-flops 80 .
  • FIG. 11A and 11B show a configuration example of the pixel circuit 62 applicable to the pixel circuits 62R, 62G, and 62B, and a light emitting element 70 connected to the pixel circuit 62.
  • FIG. FIG. 11A is a diagram showing connection of each element
  • FIG. 11B is a diagram schematically showing the vertical relationship among the drive circuit 40, the pixel circuit 62, and the light emitting element 70. As shown in FIG.
  • a display element can be replaced with “device” in some cases.
  • a display element, a light-emitting element, and a liquid crystal element can be called a display device, a light-emitting device, and a liquid crystal device.
  • a pixel circuit 62 shown as an example in FIGS. 11A and 11B includes a switch SW21, a switch SW22, a transistor M21, and a capacitor C21.
  • the switch SW21, the switch SW22, and the transistor M21 can be composed of OS transistors.
  • Each of the OS transistors of the switch SW21, the switch SW22, and the transistor M21 preferably has a back gate electrode. can be configured to provide
  • the transistor M21 has a gate electrode electrically connected to the switch SW21, a first electrode electrically connected to the light emitting element 70, and a second electrode electrically connected to the conductive film ANO.
  • the conductive film ANO is wiring for applying a potential for supplying current to the light emitting element 70 .
  • the switch SW21 has a first terminal electrically connected to the gate electrode of the transistor M21, a second terminal electrically connected to the source line SL, and the potential of the gate line GL1. and a gate electrode having a function of controlling a non-conducting state.
  • the switch SW22 is conductive or non-conductive based on the potentials of a first terminal electrically connected to the wiring V0, a second terminal electrically connected to the light emitting element 70, and the gate line GL2. and a gate electrode having a function of controlling the
  • the wiring V0 is a wiring for applying a reference potential and a wiring for outputting the current flowing through the pixel circuit 62 to the driving circuit 40 or the function circuit 50 .
  • Capacitor C21 includes a conductive film electrically connected to the gate electrode of transistor M21 and a conductive film electrically connected to the second electrode of switch SW22.
  • the light emitting element 70 includes a first electrode electrically connected to the first electrode of the transistor M21 and a second electrode electrically connected to the conductive film VCOM.
  • the conductive film VCOM is wiring for applying a potential for supplying current to the light emitting element 70 .
  • the intensity of light emitted from the light emitting element 70 can be controlled according to the image signal applied to the gate electrode of the transistor M21. Further, the amount of current flowing through the light emitting element 70 can be increased by the reference potential of the wiring V0 applied via the switch SW22. Further, by monitoring the amount of current flowing through the wiring V0 with an external circuit, the amount of current flowing through the light emitting element can be estimated. This makes it possible to detect pixel defects and the like.
  • the pixel density of the display device 10 can be 1000 ppi or more, or 5000 ppi or more, or 7000 ppi or more. Therefore, the display device 10 can be a display device for AR or VR, for example, and can be suitably applied to an electronic device such as an HMD in which the distance between the display unit and the user is short.
  • the gate line GL1, the gate line GL2, the conductive film VCOM, the wiring V0, the conductive film ANO, and the source line SL are supplied from the driving circuit 40 below the pixel circuit 62 via wiring.
  • wiring for supplying signals and voltages of the drive circuit 40 may be routed around the periphery of the display section 60 and electrically connected to the pixel circuits 62 arranged in a matrix on the layer 30 .
  • it is effective to provide the gate driver 41 of the driving circuit 40 in the layer 30 . That is, it is effective to use an OS transistor as the transistor of the gate driver 41 .
  • a configuration in which part of the function of the source driver 42 of the drive circuit 40 is provided in the layer 30 is effective. For example, it is effective to provide the layer 30 with a demultiplexer that distributes the signal output by the source driver 42 to each source line. It is effective to use an OS transistor as the transistor of the demultiplexer.
  • the backup circuit 82 is preferably a memory having an OS transistor, for example.
  • a backup circuit composed of an OS transistor can suppress a voltage drop according to the data to be backed up and consume almost no power to hold data, because the OS transistor has an extremely small off-state current. , and other advantages.
  • a backup circuit 82 having an OS transistor can be provided in the display portion 60 in which a plurality of pixels 61 are arranged. FIG. 10 illustrates how each pixel 61 is provided with a backup circuit 82 .
  • a backup circuit 82 including an OS transistor can be stacked with the layer 20 including the Si transistor.
  • the backup circuit 82 may be arranged in a matrix like the sub-pixels in the pixel 61, or may be arranged for every plurality of pixels. That is, the backup circuit 82 can be arranged in the layer 30 without being restricted by the arrangement of the pixels 61 . Therefore, it is possible to increase the degree of freedom of the display section/circuit layout, to arrange the circuit area without increasing the circuit area, and to increase the storage capacity of the backup circuit 82 required for arithmetic processing.
  • FIG. 12 shows a modification of each configuration of the display device 10 described above.
  • the block diagram of the display device 10A shown in FIG. 12 corresponds to a configuration in which an accelerator 52 is added to the functional circuit 50 in the display device 10 of FIG.
  • the accelerator 52 functions as a dedicated arithmetic circuit for sum-of-products arithmetic processing of the artificial neural network NN. In the calculation using the accelerator 52, it is possible to perform processing such as correcting the contour of the image by up-converting the display data. It should be noted that power consumption can be reduced by controlling the power gating of the CPU 51 while the accelerator 52 is performing arithmetic processing.
  • the display device of one embodiment of the present invention can be formed by stacking the pixel circuit and the functional circuit, a defective pixel can be detected using the functional circuit provided below the screen circuit. By using the defective pixel information, the display defect caused by the defective pixel can be corrected, and normal display can be performed.
  • correction methods exemplified below may be performed by a circuit provided outside the display device. Also, part of the correction method may be performed by the functional circuit 50 of the display device 10 .
  • FIG. 13A is a flowchart for the correction method described below.
  • step S2 "read current of pixel"
  • the current of the pixel is read.
  • each pixel can be driven to output current to a monitor line electrically connected to the pixel.
  • step S3 "voltage conversion"
  • the read current is converted into voltage.
  • a digital signal is to be handled in subsequent processing, it can be converted into digital data in step S3.
  • ADC analog-to-digital conversion circuit
  • Pixel parameters include, for example, the threshold voltage or field effect mobility of a driving transistor, the threshold voltage of a light emitting element, and the current value at a predetermined voltage.
  • step S5 abnormality determination
  • the abnormal pixel includes a dark point defect whose luminance is extremely low with respect to the input data potential, a bright point defect whose luminance is extremely high, and the like.
  • step S5 the address of the abnormal pixel and the type of defect can be identified and obtained.
  • step S6 correction processing
  • FIG. 13B schematically shows 3 ⁇ 3 pixels.
  • the center pixel is pixel 61D which is a dark spot defect.
  • FIG. 13B schematically shows that the pixel 61D is turned off and the surrounding pixels 61N are turned on with a predetermined luminance.
  • a dark spot defect is a defect in which the luminance of a pixel is unlikely to reach the normal luminance even if correction is performed to increase the data potential to be input to the pixel. Therefore, as shown in FIG. 13B, correction is performed to increase the brightness of the pixels 61N surrounding the dark spot defect pixel 61D. As a result, a normal image can be displayed even when a dark spot defect occurs.
  • the bright spot defect can be made inconspicuous by lowering the brightness of the surrounding pixels.
  • correction parameters can be set for each pixel.
  • corrected image data for displaying an optimum image on the display device 10 can be generated.
  • correction parameters can be set so as to cancel (level) variations in pixel parameters.
  • a reference value is set based on the median value or average value of pixel parameters for some or all pixels, and the correction value for canceling the difference from the reference value for the pixel parameter of a predetermined pixel is It can be set as a correction parameter for the pixel.
  • correction data that considers both a correction amount for compensating for the abnormal pixel and a correction amount for canceling variations in pixel parameters.
  • step S7 the correction operation is terminated.
  • an image can be displayed based on the correction parameters acquired in the correction operation and the input image data.
  • a neural network may be used as one of the correction operations.
  • the configuration is such that sum-of-products computation is repeated.
  • Computation using the accelerator 52 can correct the above-described display failure. It should be noted that power consumption can be reduced by controlling the power gating of the CPU 51 while the accelerator 52 is performing arithmetic processing.
  • the neural network can determine correction parameters based on inference results obtained by machine learning, for example.
  • DNN deep neural networks
  • CNN convolutional neural networks
  • RNN recurrent neural networks
  • DBM deep Boltzmann machines
  • DBN deep belief networks
  • the above-described CPU 51 can continue to hold the data in the middle of the calculation as backup data. Therefore, it is particularly effective in performing a huge amount of arithmetic processing such as an arithmetic operation based on an artificial neural network.
  • the CPU 51 function as an application processor, it is possible to reduce power consumption as well as reduce display defects by combining driving with variable frame frequency.
  • FIG. 14 is a cross-sectional view showing a configuration example of the display device 10.
  • the display device 10 has an insulator 421 and a base material 770 , and the insulator 421 and the base material 770 are attached with a sealant 712 .
  • An OS transistor is preferably used for the pixel circuit.
  • at least part of the driver circuit may be formed using an OS transistor.
  • at least part of the functional circuit may be formed using an OS transistor.
  • at least part of the drive circuit may be externally attached.
  • at least part of the functional circuit may be externally attached.
  • Insulator 421 As the insulator 421, various insulator substrates such as a glass substrate and a sapphire substrate can be used. An insulator 214 is provided over the insulator 421 and an insulator 216 is provided over the insulator 214 .
  • Insulator 222 ⁇ Insulator 222, Insulator 224, Insulator 254, Insulator 280, Insulator 274, Insulator 281>>
  • An insulator 222 , an insulator 224 , an insulator 254 , an insulator 280 , an insulator 274 , and an insulator 281 are provided over the insulator 216 .
  • the insulator 421 , the insulator 214 , the insulator 280 , the insulator 274 , and the insulator 281 function as interlayer films and function as planarization films that cover the uneven shapes below them. good too.
  • An insulator 361 is provided over the insulator 281 .
  • a conductor 317 and a conductor 337 are embedded in the insulator 361 .
  • the height of the top surface of the conductor 337 and the height of the top surface of the insulator 361 can be made approximately the same.
  • An insulator 363 is provided over the conductor 337 and the insulator 361 .
  • a conductor 347 , a conductor 353 , a conductor 355 , and a conductor 357 are embedded in the insulator 363 .
  • the height of the top surfaces of the conductors 353, 355, and 357 and the height of the top surface of the insulator 363 can be approximately the same.
  • a conductor 341 , a conductor 343 , and a conductor 351 are embedded in the insulator 363 .
  • the height of the top surface of the conductor 351 and the height of the top surface of the insulator 363 can be made approximately the same.
  • the insulator 361 and the insulator 363 function as interlayer films and may function as planarization films that cover the uneven shapes below them.
  • the top surface of the insulator 363 may be planarized by planarization treatment using a chemical mechanical polishing (CMP) method or the like in order to improve planarity.
  • CMP chemical mechanical polishing
  • connection electrode 760 is provided over the conductor 353 , the conductor 355 , the conductor 357 , and the insulator 363 .
  • An anisotropic conductor 780 is provided to be electrically connected to the connection electrode 760
  • an FPC (Flexible Printed Circuit) 716 is provided to be electrically connected to the anisotropic conductor 780 .
  • Various signals and the like are supplied to the display device 10 from the outside of the display device 10 by the FPC 716 .
  • FIG. 14 shows three conductors, a conductor 353, a conductor 355, and a conductor 357, as conductors having a function of electrically connecting the connection electrode 760 and the conductor 347.
  • the mode is not limited to this.
  • the number of conductors having a function of electrically connecting the connection electrode 760 and the conductor 347 may be one, two, or four or more. By providing a plurality of conductors having a function of electrically connecting the connection electrode 760 and the conductor 347, contact resistance can be reduced.
  • a transistor 750 is provided over the insulator 214 .
  • the transistor 750 can be the transistor provided in the layer 30 described in Embodiment 6.
  • a transistor provided in the pixel circuit 62 can be used.
  • An OS transistor can be preferably used as the transistor 750 .
  • An OS transistor has a feature of extremely low off-state current. Therefore, since the retention time of image data or the like can be lengthened, the frequency of refresh operations can be reduced. Therefore, power consumption of the display device 10 can be reduced.
  • the transistor 750 can be a transistor provided in the backup circuit 82 .
  • An OS transistor can be preferably used as the transistor 750 .
  • An OS transistor has a feature of extremely low off-state current. Therefore, data held in the flip-flop can be held even during a period in which sharing of the power supply voltage is stopped. Therefore, the normally-off operation of the CPU (the operation of intermittently stopping the power supply voltage) can be achieved. Therefore, power consumption of the display device 10 can be reduced.
  • a conductor 301 a and a conductor 301 b are embedded in the insulator 254 , the insulator 280 , the insulator 274 , and the insulator 281 .
  • Conductor 301 a is electrically connected to one of the source and drain of transistor 750
  • conductor 301 b is electrically connected to the other of the source and drain of transistor 750 .
  • the height of the top surfaces of the conductors 301a and 301b and the height of the top surface of the insulator 281 can be made approximately the same.
  • a conductor 311 , a conductor 313 , a conductor 331 , a capacitor 790 , a conductor 333 , and a conductor 335 are embedded in the insulator 361 .
  • the conductors 311 and 313 are electrically connected to the transistor 750 and function as wirings.
  • the conductors 333 and 335 are electrically connected to the capacitor 790 .
  • the height of the top surfaces of the conductors 331, 333, and 335 and the height of the top surface of the insulator 361 can be approximately the same.
  • capacitor 790 has lower electrode 321 and upper electrode 325 .
  • An insulator 323 is provided between the lower electrode 321 and the upper electrode 325 . That is, the capacitor 790 has a laminated structure in which the insulator 323 functioning as a dielectric is sandwiched between a pair of electrodes.
  • FIG. 14 shows an example in which the capacitor 790 is provided over the insulator 281; however, the capacitor 790 may be provided over an insulator different from the insulator 281.
  • FIG. 14 shows an example in which the conductor 301a, the conductor 301b, and the conductor 305 are formed in the same layer. Further, an example in which the conductor 311, the conductor 313, the conductor 317, and the lower electrode 321 are formed in the same layer is shown. Further, an example in which the conductor 331, the conductor 333, the conductor 335, and the conductor 337 are formed in the same layer is shown. Further, an example in which the conductor 341, the conductor 343, and the conductor 347 are formed in the same layer is shown. Furthermore, an example in which the conductor 351, the conductor 353, the conductor 355, and the conductor 357 are formed in the same layer is shown. By forming a plurality of conductors in the same layer, the manufacturing process of the display device 10 can be simplified, so that the manufacturing cost of the display device 10 can be reduced. Note that they may be formed in different layers and may have different types of materials.
  • a display device 10 shown in FIG. 14 has a light emitting element 70 .
  • the light-emitting element 70 has a conductor 772 , an EL layer 786 and a conductor 788 .
  • the EL layer 786 has an organic compound or an inorganic compound such as quantum dots.
  • Materials that can be used for the organic compound include fluorescent materials, phosphorescent materials, and the like.
  • Materials that can be used for quantum dots include colloidal quantum dot materials, alloy quantum dot materials, core-shell quantum dot materials, core quantum dot materials, and the like.
  • the luminance of the display device 10 can be, for example, 500 cd/m 2 or more, preferably 1000 cd/m 2 or more and 10000 cd/m 2 or less, and more preferably 2000 cd/m 2 or more and 5000 cd/m 2 or less.
  • the conductor 772 is electrically connected to the other of the source and the drain of the transistor 750 through the conductors 351, 341, 331, 313, and 301b.
  • a conductor 772 is formed over the insulator 363 and functions as a pixel electrode.
  • a material that transmits or reflects visible light can be used for the conductor 772 .
  • a light-transmitting material for example, an oxide material containing indium, zinc, tin, or the like is preferably used.
  • a reflective material for example, a material containing aluminum, silver, or the like may be used.
  • the light-emitting element 70 includes a light-transmitting conductor 788 and can be a top-emission light-emitting element. Note that the light-emitting element 70 may have a bottom emission structure in which light is emitted to the conductor 772 side, or a dual emission structure in which light is emitted to both the conductor 772 and the conductor 788 .
  • the light emitting device 70 can have a micro-optical resonator (microcavity) structure. Thereby, light of predetermined colors (for example, RGB) can be extracted, and the display device 10 can display a high-brightness image. Moreover, the power consumption of the display device 10 can be reduced.
  • micro-optical resonator microcavity
  • Light shielding layer 738, insulator 734>> A light shielding layer 738 and an insulator 734 in contact therewith are provided on the substrate 770 side.
  • the light blocking layer 738 has a function of blocking light emitted from adjacent regions.
  • the light shielding layer 738 has a function of blocking external light from reaching the transistor 750 and the like.
  • the insulator 730 can be configured to cover part of the conductor 772 .
  • the present invention is not limited to this.
  • a structure in which the insulator 730 is not provided may be employed. Note that the opening of the display device can be increased without the insulator 730, which is preferable.
  • the light-blocking layer 738 is provided so as to have a region overlapping with the insulator 730 . Also, the light shielding layer 738 is covered with an insulator 734 . A sealing layer 732 is filled between the light emitting element 70 and the insulator 734 .
  • structure 778 is provided between insulator 730 and EL layer 786 . Also, the structure 778 is provided between the insulator 730 and the insulator 734 .
  • the display device 10 can be provided with optical members (optical substrates) such as a polarizing member, a retardation member, and an antireflection member.
  • optical members optical substrates
  • a polarizing member such as a polarizing member, a retardation member, and an antireflection member.
  • a colored layer can be provided.
  • the colored layer is provided so as to have a region overlapping with the light emitting element 70 .
  • the color purity of the light extracted from the light emitting element 70 can be increased. Thereby, a high-quality image can be displayed on the display device 10 .
  • all the light-emitting elements 70 of the display device 10 can be light-emitting elements that emit white light. can do.
  • FIG. 15 is a cross-sectional view showing a configuration example of the display device 10. As shown in FIG. The display device 10 has a substrate 701 and a base material 770 , and the substrate 701 and the base material 770 are bonded together with a sealing material 712 . The display device 10 shown in FIG. 15 is different from the display device 10 shown in FIG. 14 in that the transistor 601 is included.
  • a transistor 441 and a transistor 601 are provided over the substrate 701 .
  • the transistors 441 and 601 can be the transistors provided in the layer 20 described in Embodiment 6. For example, it can be used for the transistor of the driving circuit 40 or the transistor of the functional circuit 50 that the layer 20 has.
  • the transistor 441 includes a conductor 443 functioning as a gate electrode, an insulator 445 functioning as a gate insulator, and part of the substrate 701, and includes a semiconductor region 447 including a channel formation region and a source region. Or it has a low resistance region 449a functioning as one of the drain regions and a low resistance region 449b functioning as the other of the source or drain regions. Transistor 441 may be either p-channel or n-channel.
  • a transistor 441 is electrically isolated from other transistors by an element isolation layer 403 .
  • FIG. 15 shows the case where the element isolation layer 403 electrically isolates the transistor 441 from the transistor 601 .
  • the element isolation layer 403 can be formed using a LOCOS (LOCal Oxidation of Silicon) method, an STI (Shallow Trench Isolation) method, or the like.
  • the semiconductor region 447 has a convex shape.
  • a conductor 443 is provided to cover the side and top surfaces of the semiconductor region 447 with the insulator 445 interposed therebetween. Note that FIG. 15 does not show how the conductor 443 covers the side surface of the semiconductor region 447 .
  • a material that adjusts the work function can be used for the conductor 443 .
  • a transistor in which a semiconductor region has a convex shape such as the transistor 441 can be called a fin transistor because it uses a convex portion of a semiconductor substrate.
  • an insulator functioning as a mask for forming the projection may be provided in contact with the upper portion of the projection.
  • FIG. 15 shows a structure in which part of the substrate 701 is processed to form a convex portion, a semiconductor having a convex shape may be formed by processing an SOI substrate.
  • transistor 441 illustrated in FIG. 15 is an example, and is not limited to that structure, and an appropriate structure may be employed depending on the circuit structure, the operation method of the circuit, or the like.
  • transistor 441 may be a planar transistor.
  • the transistor 601 can have a structure similar to that of the transistor 441 .
  • the insulators 405 , 407 , 409 , and 411 are provided over the substrate 701 .
  • a conductor 451 is embedded in the insulator 405 , the insulator 407 , the insulator 409 , and the insulator 411 .
  • the height of the top surface of the conductor 451 and the height of the top surface of the insulator 411 can be made approximately the same.
  • the insulator 405, the insulator 407, the insulator 409, and the insulator 411 function as interlayer films and may function as planarization films that cover the uneven shapes below them.
  • Insulator 421 and an insulator 214 are provided over the conductor 451 and the insulator 411 .
  • a conductor 453 is embedded in the insulator 421 and the insulator 214 .
  • the height of the top surface of the conductor 453 and the height of the top surface of the insulator 214 can be made approximately the same.
  • An insulator 216 is provided over the conductor 453 and the insulator 214 .
  • a conductor 455 is embedded in the insulator 216 .
  • the height of the top surface of the conductor 455 and the height of the top surface of the insulator 216 can be made approximately the same.
  • Insulator 222 ⁇ Insulator 222, Insulator 224, Insulator 254, Insulator 280, Insulator 274, Insulator 281>>
  • An insulator 222 , an insulator 224 , an insulator 254 , an insulator 280 , an insulator 274 , and an insulator 281 are provided over the conductor 455 and the insulator 216 .
  • a conductor 305 is embedded in the insulator 222 , the insulator 224 , the insulator 254 , the insulator 280 , the insulator 274 , and the insulator 281 .
  • the height of the upper surface of the conductor 305 and the height of the upper surface of the insulator 281 can be made approximately the same.
  • the insulator 421 , the insulator 214 , the insulator 280 , the insulator 274 , and the insulator 281 function as interlayer films and function as planarization films that cover the uneven shapes below them. good too.
  • An insulator 361 is provided over the conductor 305 and the insulator 281 .
  • low resistance region 449b which functions as the other of the source or drain regions of transistor 441, includes conductors 451, 453, 455, 305, 317, and 317. 337 , a conductor 347 , a conductor 353 , a conductor 355 , a conductor 357 , a connection electrode 760 , and an anisotropic conductor 780 to electrically connect to the FPC 716 .
  • FIG. 16 is a cross-sectional view showing a configuration example of the display device 10. As shown in FIG. The display device 10 has a substrate 701 and a base material 770 , and the substrate 701 and the base material 770 are bonded together with a sealing material 712 . The display device 10 shown in FIG. 16 is different from the display device 10 shown in FIG. 15 in that the transistor 750 has a structure similar to that of the transistor 441 .
  • a transistor 441 and a transistor 601 are provided over the substrate 701 .
  • the transistors 441 and 601 can be the transistors provided in the layer 20 described in Embodiment 6. For example, it can be used for the transistor of the driving circuit 40 or the transistor of the functional circuit 50 that the layer 20 has.
  • the transistor 441 includes a conductor 443 functioning as a gate electrode, an insulator 445 functioning as a gate insulator, and part of the substrate 701, and includes a semiconductor region 447 including a channel formation region and a source region. Or it has a low resistance region 449a functioning as one of the drain regions and a low resistance region 449b functioning as the other of the source or drain regions. Transistor 441 may be either p-channel or n-channel.
  • low resistance region 449b which functions as the other of the source or drain regions of transistor 441, includes conductor 451, conductor 453, conductor 455, bump 458, conductor 305, and conductor 317.
  • a transistor 441 is electrically isolated from other transistors by an element isolation layer 403 .
  • FIG. 16 shows the case where the element isolation layer 403 electrically isolates the transistor 441 from the transistor 601 .
  • the element isolation layer 403 can be formed using a LOCOS (LOCal Oxidation of Silicon) method, an STI (Shallow Trench Isolation) method, or the like.
  • the semiconductor region 447 has a convex shape.
  • a conductor 443 is provided to cover the side and top surfaces of the semiconductor region 447 with the insulator 445 interposed therebetween. Note that FIG. 16 does not show how the conductor 443 covers the side surface of the semiconductor region 447 .
  • a material that adjusts the work function can be used for the conductor 443 .
  • a transistor in which a semiconductor region has a convex shape such as the transistor 441 can be called a fin transistor because it uses a convex portion of a semiconductor substrate.
  • an insulator functioning as a mask for forming the projection may be provided in contact with the upper portion of the projection.
  • FIG. 16 shows a structure in which part of the substrate 701 is processed to form a convex portion, a semiconductor having a convex shape may be formed by processing an SOI substrate.
  • transistor 441 illustrated in FIG. 16 is an example, and is not limited to that structure, and an appropriate structure may be employed depending on the circuit structure, the operation method of the circuit, or the like.
  • transistor 441 may be a planar transistor.
  • the transistor 601 can have a structure similar to that of the transistor 441 .
  • the insulators 405 , 407 , 409 , and 411 are provided over the substrate 701 .
  • a conductor 451 is embedded in the insulator 405 , the insulator 407 , the insulator 409 , and the insulator 411 .
  • the height of the top surface of the conductor 451 and the height of the top surface of the insulator 411 can be made approximately the same.
  • the insulator 405, the insulator 407, the insulator 409, and the insulator 411 function as interlayer films and may function as planarization films that cover the uneven shapes below them.
  • Insulator 421 and an insulator 214 are provided over the conductor 451 and the insulator 411 .
  • a conductor 453 is embedded in the insulator 421 and the insulator 214 .
  • the height of the top surface of the conductor 453 and the height of the top surface of the insulator 214 can be made approximately the same.
  • An insulator 216 is provided over the conductor 453 and the insulator 214 .
  • a conductor 455 is embedded in the insulator 216 .
  • the height of the top surface of the conductor 455 and the height of the top surface of the insulator 216 can be made approximately the same.
  • Adhesion layer 459 An adhesion layer 459 is provided over the insulator 216 .
  • a bump 458 is embedded in the adhesive layer 459 .
  • Adhesive layer 459 adheres insulator 216 and substrate 701B.
  • the lower surface of the bump 458 is in contact with the conductor 455 and the upper surface of the bump 458 is in contact with the conductor 305 to electrically connect the conductor 455 and the conductor 305 .
  • a transistor 750 is provided over the substrate 701B.
  • the transistor 750 can be the transistor provided in the layer 30 described in Embodiment 6.
  • a transistor provided in the pixel circuit 62 can be used.
  • the transistor 750 can have a structure similar to that of the transistor 441 .
  • the insulator 405B, the insulator 280, the insulator 274, and the insulator 281 are provided over the substrate 701B.
  • the conductor 305 is embedded in the insulator 405B, the insulator 280, the insulator 274, and the insulator 281.
  • the height of the upper surface of the conductor 305 and the height of the upper surface of the insulator 281 can be made approximately the same.
  • the insulator 405B, the insulator 280, the insulator 274, and the insulator 281 function as interlayer films and may function as planarization films that cover the uneven shapes below them.
  • An insulator 361 is provided over the conductor 305 and the insulator 281 .
  • the display device 10 illustrated in FIG. 17 is mainly different from the display device 10 illustrated in FIG. 15 in that the transistors 602 and 603 which are OS transistors are provided instead of the transistors 441 and 601 .
  • an OS transistor can be used as the transistor 750 . That is, the display device 10 illustrated in FIG. 17 is provided with stacked OS transistors.
  • FIG. 17 shows an example in which the transistors 602 and 603 are provided over the substrate 701 .
  • the substrate 701 as described above, a single crystal semiconductor substrate such as a single crystal silicon substrate or another semiconductor substrate can be used. Further, as the substrate 701, various insulating substrates such as a glass substrate and a sapphire substrate may be used.
  • transistor 603 ⁇ transistor 602, transistor 603>>
  • the transistors 602 and 603 can be the transistors provided in the layer 20 described in Embodiment 6.
  • the transistors 602 and 603 can be transistors with structures similar to that of the transistor 750 . Note that the transistors 602 and 603 may be OS transistors having structures different from that of the transistor 750 .
  • the insulator 616 , the insulator 622 , the insulator 624 , the insulator 654 , the insulator 680 , the insulator 674 , and the insulator 681 are provided over the insulator 614 .
  • a conductor 461 is embedded in the insulator 654 , the insulator 680 , the insulator 674 , and the insulator 681 .
  • the height of the top surface of the conductor 461 and the height of the top surface of the insulator 681 can be made approximately the same.
  • a conductor 463 is embedded in the insulator 501 .
  • the height of the top surface of the conductor 463 and the height of the top surface of the insulator 501 can be made approximately the same.
  • An insulator 421 and an insulator 214 are provided over the conductor 463 and the insulator 501 .
  • a conductor 453 is embedded in the insulator 421 and the insulator 214 .
  • the height of the top surface of the conductor 453 and the height of the top surface of the insulator 214 can be made approximately the same.
  • one of the source or drain of transistor 602 is connected to conductor 461, conductor 463, conductor 453, conductor 455, conductor 305, conductor 317, conductor 337, conductor 347, conductor It is electrically connected to the FPC 716 through the body 353 , the conductor 355 , the conductor 357 , the connection electrode 760 , and the anisotropic conductor 780 .
  • a conductor 305 is embedded in the insulator 222 , the insulator 224 , the insulator 254 , the insulator 280 , the insulator 274 , and the insulator 281 .
  • the height of the upper surface of the conductor 305 and the height of the upper surface of the insulator 281 can be made approximately the same.
  • the insulator 613 , the insulator 614 , the insulator 680 , the insulator 674 , the insulator 681 , and the insulator 501 function as interlayer films and function as planarization films that cover the uneven shapes below them. may have
  • all the transistors included in the display device 10 can be OS transistors while the display device 10 has a narrow frame and a small size.
  • the transistor provided in the layer 20 and the transistor provided in the layer 30 described in Embodiment 6 can be manufactured using the same device. Therefore, the manufacturing cost of the display device 10 can be reduced, and the display device 10 can be made inexpensive.
  • FIG. 18 is a cross-sectional view showing a configuration example of the display device 10. As shown in FIG. The main difference from the display device 10 shown in FIG. 15 is that a layer including the transistor 800 is provided between the layer including the transistor 750 and the layers including the transistors 601 and 441 .
  • the layer 20 described in Embodiment 6 can be formed of a layer including the transistors 601 and 441 and a layer including the transistor 800 .
  • the transistor 750 can be the transistor provided in the layer 30 described in Embodiment 6.
  • a conductor 853 is embedded in the insulator 821 and the insulator 814 .
  • the height of the top surface of the conductor 853 and the height of the top surface of the insulator 814 can be made approximately the same.
  • a conductor 855 is embedded in the insulator 816 .
  • the height of the top surface of the conductor 855 and the height of the top surface of the insulator 816 can be made approximately the same.
  • An insulator 822 , an insulator 824 , an insulator 854 , an insulator 880 , an insulator 874 , and an insulator 881 are provided over the conductor 855 and the insulator 816 .
  • the conductor 805 is embedded in the insulator 822 , the insulator 824 , the insulator 854 , the insulator 880 , the insulator 874 , and the insulator 881 .
  • the height of the upper surface of the conductor 805 and the height of the upper surface of the insulator 881 can be made approximately the same.
  • An insulator 421 and an insulator 214 are provided over the conductor 817 and the insulator 881 .
  • low resistance region 449b which functions as the other of the source or drain regions of transistor 441, includes conductors 451, 853, 855, 805, 817, 817, and 855.
  • a transistor 800 is provided over the insulator 814 .
  • the transistor 800 can be the transistor provided in the layer 20 described in Embodiment 6.
  • the transistor 800 is preferably an OS transistor.
  • transistor 800 can be a transistor provided in backup circuit 82 .
  • a conductor 801 a and a conductor 801 b are embedded in the insulator 854 , the insulator 880 , the insulator 874 , and the insulator 881 .
  • Conductor 801 a is electrically connected to one of the source and drain of transistor 800
  • conductor 801 b is electrically connected to the other of the source and drain of transistor 800 .
  • the height of the top surfaces of the conductors 801a and 801b and the height of the top surface of the insulator 881 can be approximately the same.
  • the transistor 750 can be the transistor provided in the layer 30 described in Embodiment 6.
  • transistor 750 can be a transistor provided in pixel circuit 62 .
  • the transistor 750 is preferably an OS transistor.
  • Insulator 405, insulator 407, insulator 409, insulator 411, insulator 821, insulator 814, insulator 880, insulator 874, insulator 881, insulator 421, insulator 214, insulator 280, insulator 274 , the insulator 281 , the insulator 361 , and the insulator 363 function as interlayer films and may function as planarization films covering the uneven shapes below them.
  • FIG. 18 shows an example in which the conductor 801a, the conductor 801b, and the conductor 805 are formed in the same layer. Further, an example in which the conductor 811, the conductor 813, and the conductor 817 are formed in the same layer is shown.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • ⁇ Structure example of transistor> 19A, 19B, and 19C are a top view and a cross-sectional view of a transistor 200A that can be used in a display device that is one embodiment of the present invention, and the periphery of the transistor 200A.
  • the transistor 200A can be applied to the display device of one embodiment of the present invention.
  • FIG. 19A is a top view of transistor 200A.
  • 19B and 19C are cross-sectional views of the transistor 200A.
  • FIG. 19B is a cross-sectional view of the portion indicated by the dashed-dotted line A1-A2 in FIG. 19A, and is also a cross-sectional view in the channel length direction of the transistor 200A.
  • FIG. 19C is a cross-sectional view of the portion indicated by the dashed-dotted line A3-A4 in FIG. 19A, and is also a cross-sectional view of the transistor 200A in the channel width direction.
  • some elements are omitted for clarity of illustration.
  • the transistor 200A includes a metal oxide 230a over a substrate (not shown), a metal oxide 230b over the metal oxide 230a, and a metal oxide 230b.
  • a conductor 242a and a conductor 242b are spaced apart from each other, and an insulator 280 is arranged over the conductor 242a and the conductor 242b and has an opening formed between the conductor 242a and the conductor 242b.
  • the conductor 260 arranged in the opening, the metal oxide 230b, the conductor 242a, the conductor 242b, and the insulator 280, the insulator 250 arranged between the conductor 260, and the metal It has an oxide 230 b , a conductor 242 a , a conductor 242 b , an insulator 280 , and a metal oxide 230 c interposed between the insulator 250 .
  • the top surface of the conductor 260 preferably substantially coincides with the top surfaces of the insulator 250, the insulator 254, the metal oxide 230c, and the insulator 280.
  • metal oxide 230a, the metal oxide 230b, and the metal oxide 230c may be collectively referred to as the metal oxide 230 below.
  • conductor 242a and the conductor 242b may be collectively referred to as a conductor 242 in some cases.
  • side surfaces of the conductors 242a and 242b on the conductor 260 side are substantially vertical.
  • the transistor 200A illustrated in FIG. 19 is not limited to this, and the angle between the side surfaces and the bottom surfaces of the conductors 242a and 242b is 10° to 80°, preferably 30° to 60°. may be Moreover, the opposing side surfaces of the conductor 242a and the conductor 242b may have a plurality of surfaces.
  • an insulator 254 is interposed between insulator 224, metal oxide 230a, metal oxide 230b, conductor 242a, conductor 242b, and metal oxide 230c, and insulator 280. preferably.
  • the insulator 254 includes the side surface of the metal oxide 230c, the top and side surfaces of the conductor 242a, the top and side surfaces of the conductor 242b, the metal oxide 230a, and the metal oxide 230b. , and the top surface of insulator 224 .
  • the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c are stacked in a region where a channel is formed (hereinafter also referred to as a channel formation region) and its vicinity.
  • a channel formation region a region where a channel is formed
  • the invention is not limited to this.
  • a two-layer structure of the metal oxide 230b and the metal oxide 230c, or a laminated structure of four or more layers may be provided.
  • the conductor 260 has a two-layer structure in the transistor 200A, the present invention is not limited to this.
  • the conductor 260 may have a single-layer structure or a laminated structure of three or more layers.
  • each of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c may have a laminated structure of two or more layers.
  • the metal oxide 230c has a stacked structure consisting of a first metal oxide and a second metal oxide on the first metal oxide
  • the first metal oxide is the metal oxide 230b.
  • the second metal oxide preferably has a similar composition to metal oxide 230a.
  • the conductor 260 functions as a gate electrode of the transistor, and the conductors 242a and 242b function as source and drain electrodes, respectively.
  • the conductor 260 is formed to be embedded in the opening of the insulator 280 and the region sandwiched between the conductors 242a and 242b.
  • the arrangement of the conductors 260 , 242 a and 242 b is selected in a self-aligned manner with respect to the opening of the insulator 280 . That is, in the transistor 200A, the gate electrode can be arranged between the source electrode and the drain electrode in a self-aligned manner. Therefore, since the conductor 260 can be formed without providing a margin for alignment, the area occupied by the transistor 200A can be reduced. As a result, the display device can have high definition. In addition, the display device can have a narrow frame.
  • the conductor 260 preferably has a conductor 260a provided inside the insulator 250 and a conductor 260b provided so as to be embedded inside the conductor 260a.
  • the transistor 200A includes an insulator 214 provided over a substrate (not shown), an insulator 216 provided over the insulator 214, and a conductor 205 embedded in the insulator 216. , insulator 222 disposed over insulator 216 and conductor 205 , and insulator 224 disposed over insulator 222 .
  • a metal oxide 230 a is preferably disposed over the insulator 224 .
  • An insulator 274 functioning as an interlayer film and an insulator 281 are preferably provided over the transistor 200A.
  • the insulator 274 is preferably arranged in contact with top surfaces of the conductor 260 , the insulator 250 , the insulator 254 , the metal oxide 230 c , and the insulator 280 .
  • the insulators 222, 254, and 274 preferably have a function of suppressing diffusion of hydrogen (eg, at least one of hydrogen atoms, hydrogen molecules, and the like).
  • insulators 222 , 254 , and 274 preferably have lower hydrogen permeability than insulators 224 , 250 , and 280 .
  • the insulators 222 and 254 preferably have a function of suppressing diffusion of oxygen (eg, at least one of oxygen atoms, oxygen molecules, and the like).
  • insulators 222 and 254 preferably have lower oxygen permeability than insulators 224 , 250 and 280 .
  • insulator 224 , metal oxide 230 , and insulator 250 are separated by insulators 280 and 281 and insulators 254 and 274 . Therefore, impurities such as hydrogen contained in the insulators 280 and 281 or excess oxygen in the insulators 224, the metal oxides 230a, and the insulators 250 interfere with the insulators 224, the metal oxides 230a, and the metal oxides. 230b and the insulator 250 can be suppressed.
  • a conductor 240 (a conductor 240a and a conductor 240b) that is electrically connected to the transistor 200A and functions as a plug is preferably provided.
  • insulators 241 (an insulator 241a and an insulator 241b) are provided in contact with side surfaces of the conductor 240 functioning as a plug. That is, the insulator 241 is provided in contact with the inner walls of the openings of the insulator 254 , the insulator 280 , the insulator 274 , and the insulator 281 .
  • the first conductor of the conductor 240 may be provided in contact with the side surface of the insulator 241 and the second conductor of the conductor 240 may be provided inside.
  • the height of the upper surface of the conductor 240 and the height of the upper surface of the insulator 281 can be made approximately the same.
  • the conductor 240 may be provided as a single layer or a laminated structure of three or more layers. When the structure has a laminated structure, an ordinal number may be assigned in order of formation for distinction.
  • metal oxides functioning as oxide semiconductors are added to the metal oxides 230 (the metal oxides 230a, 230b, and 230c) including the channel formation region. ) is preferably used.
  • oxide semiconductors metal oxides functioning as oxide semiconductors
  • the metal oxide preferably contains at least indium (In) or zinc (Zn). In particular, it preferably contains indium (In) and zinc (Zn). Moreover, it is preferable that the element M is included in addition to these.
  • element M aluminum (Al), gallium (Ga), yttrium (Y), tin (Sn), boron (B), titanium (Ti), iron (Fe), nickel (Ni), germanium (Ge), zirconium (Zr), molybdenum (Mo), lanthanum (La), cerium (Ce), neodymium (Nd), hafnium (Hf), tantalum (Ta), tungsten (W), magnesium (Mg) or cobalt (Co)
  • the element M is preferably one or more of aluminum (Al), gallium (Ga), yttrium (Y), and tin (Sn). Moreover, it is more preferable that the element M contains either one or both of Ga and Sn.
  • the thickness of the metal oxide 230b in the region that does not overlap with the conductor 242 may be thinner than the thickness of the region that overlaps with the conductor 242 in some cases. This is formed by removing a portion of the top surface of metal oxide 230b when forming conductors 242a and 242b.
  • a region with low resistance may be formed near the interface with the conductive film.
  • a high-definition display device including a small-sized transistor can be provided.
  • a display device including a transistor with high on-state current and high luminance can be provided.
  • a fast-operating display device can be provided with a fast-operating transistor.
  • a highly reliable display device including a transistor with stable electrical characteristics can be provided.
  • a display device including a transistor with low off-state current and low power consumption can be provided.
  • transistor 200A A detailed structure of the transistor 200A that can be used in the display device that is one embodiment of the present invention will be described.
  • the conductor 205 is arranged so as to have regions that overlap with the metal oxide 230 and the conductor 260 . Further, the conductor 205 is preferably embedded in the insulator 216 .
  • the conductor 205 has a conductor 205a, a conductor 205b, and a conductor 205c.
  • the conductor 205 a is provided in contact with the bottom surface and side walls of the opening provided in the insulator 216 .
  • the conductor 205b is provided so as to be embedded in a recess formed in the conductor 205a.
  • the top surface of the conductor 205 b is lower than the top surface of the conductor 205 a and the top surface of the insulator 216 .
  • the conductor 205c is provided in contact with the top surface of the conductor 205b and the side surface of the conductor 205a.
  • the height of the top surface of the conductor 205c is substantially the same as the height of the top surface of the conductor 205a and the height of the top surface of the insulator 216 . That is, the conductor 205b is surrounded by the conductors 205a and 205c.
  • the conductor 205a and the conductor 205c are conductive materials having a function of suppressing diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, nitrogen oxide molecules (NO, NO, NO, etc.), and copper atoms. It is preferable to use a flexible material. Alternatively, it is preferable to use a conductive material having a function of suppressing diffusion of oxygen (eg, at least one of oxygen atoms, oxygen molecules, and the like).
  • the conductor 205a By using a conductive material having a function of reducing diffusion of hydrogen for the conductor 205a and the conductor 205c, impurities such as hydrogen contained in the conductor 205b are transferred to the metal oxide 230 through the insulator 224 or the like. can be suppressed. Further, by using a conductive material having a function of suppressing diffusion of oxygen for the conductors 205a and 205c, it is possible to suppress reduction in conductivity due to oxidation of the conductor 205b. As the conductive material having a function of suppressing diffusion of oxygen, titanium, titanium nitride, tantalum, tantalum nitride, ruthenium, ruthenium oxide, or the like is preferably used, for example. Therefore, the conductor 205a may be a single layer or a laminate of the above conductive materials. For example, the conductor 205a may be titanium nitride.
  • a conductive material containing tungsten, copper, or aluminum as its main component is preferably used for the conductor 205b.
  • tungsten may be used for the conductor 205b.
  • the conductor 260 may function as a first gate (also referred to as a top gate) electrode.
  • the conductor 205 functions as a second gate (also referred to as a bottom gate) electrode.
  • V th of the transistor 200A can be controlled by changing the potential applied to the conductor 205 independently of the potential applied to the conductor 260 .
  • V th of the transistor 200A can be made higher than 0 V and the off-state current can be reduced. Therefore, applying a negative potential to the conductor 205 can make the drain current smaller when the potential applied to the conductor 260 is 0 V than when no potential is applied.
  • the conductor 205 is preferably provided larger than the channel formation region in the metal oxide 230 .
  • the conductor 205 preferably extends even in a region outside the edge crossing the channel width direction of the metal oxide 230 .
  • the conductor 205 and the conductor 260 preferably overlap with each other with an insulator interposed therebetween on the outside of the side surface of the metal oxide 230 in the channel width direction.
  • the electric field of the conductor 260 functioning as the first gate electrode and the electric field of the conductor 205 functioning as the second gate electrode cause the channel formation region of the metal oxide 230 to be expanded. It can be surrounded electrically.
  • the conductor 205 is extended so that it also functions as a wire.
  • a structure in which a conductor functioning as a wiring is provided under the conductor 205 may be employed.
  • the insulator 214 preferably functions as a barrier insulating film that prevents impurities such as water or hydrogen from entering the transistor 200A from the substrate side. Therefore, the insulator 214 has a function of suppressing the diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, nitrogen oxide molecules (N 2 O, NO, NO 2 and the like), and copper atoms. (It is difficult for the above impurities to permeate.) It is preferable to use an insulating material. Alternatively, it is preferable to use an insulating material that has a function of suppressing the diffusion of oxygen (eg, at least one of oxygen atoms, oxygen molecules, and the like) (the oxygen hardly permeates).
  • oxygen eg, at least one of oxygen atoms, oxygen molecules, and the like
  • the insulator 214 is preferably made of aluminum oxide, silicon nitride, or the like. Accordingly, impurities such as water or hydrogen can be prevented from diffusing from the substrate side to the transistor 200A side with respect to the insulator 214 . Alternatively, diffusion of oxygen contained in the insulator 224 or the like to the substrate side of the insulator 214 can be suppressed.
  • the insulators 216 , 280 , and 281 that function as interlayer films preferably have lower dielectric constants than the insulator 214 .
  • the parasitic capacitance generated between wirings can be reduced.
  • the insulator 216, the insulator 280, and the insulator 281 include silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, silicon oxide to which fluorine is added, silicon oxide to which carbon is added, and carbon and nitrogen are added. Silicon oxide, silicon oxide having holes, or the like may be used as appropriate.
  • the insulators 222 and 224 function as gate insulators.
  • the insulator 224 in contact with the metal oxide 230 preferably releases oxygen by heating.
  • the oxygen released by heating is sometimes referred to as excess oxygen.
  • silicon oxide, silicon oxynitride, or the like may be used as appropriate for the insulator 224 .
  • an oxide material from which part of oxygen is released by heating is preferably used as the insulator 224 .
  • the oxide that desorbs oxygen by heating means that the desorption amount of oxygen in terms of oxygen atoms is 1.0 ⁇ 10 18 atoms/cm 3 or more, preferably 1, in TDS (Thermal Desorption Spectroscopy) analysis. 0 ⁇ 10 19 atoms/cm 3 or more, more preferably 2.0 ⁇ 10 19 atoms/cm 3 or more, or 3.0 ⁇ 10 20 atoms/cm 3 or more.
  • the surface temperature of the film during the TDS analysis is preferably in the range of 100° C. or higher and 700° C. or lower, or 100° C. or higher and 400° C. or lower.
  • the insulator 224 may have a thinner film thickness in a region that does not overlap with the insulator 254 and does not overlap with the metal oxide 230b than in other regions.
  • the thickness of the region of the insulator 224 which does not overlap with the insulator 254 and does not overlap with the metal oxide 230b is preferably a thickness with which oxygen can be diffused sufficiently.
  • the insulator 222 preferably functions as a barrier insulating film that prevents impurities such as water or hydrogen from entering the transistor 200A from the substrate side.
  • insulator 222 preferably has a lower hydrogen permeability than insulator 224 .
  • the insulator 222 preferably has a function of suppressing diffusion of oxygen (eg, at least one of oxygen atoms, oxygen molecules, and the like) (the above-mentioned oxygen is difficult to permeate).
  • oxygen eg, at least one of oxygen atoms, oxygen molecules, and the like
  • insulator 222 preferably has a lower oxygen permeability than insulator 224 .
  • the insulator 222 preferably has a function of suppressing diffusion of oxygen or impurities, so that diffusion of oxygen in the metal oxide 230 to the substrate side can be reduced.
  • the conductor 205 can be prevented from reacting with oxygen contained in the insulator 224 or the metal oxide 230 .
  • an insulator containing oxides of one or both of aluminum and hafnium which are insulating materials, is preferably used.
  • the insulator containing oxides of one or both of aluminum and hafnium aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate), or the like is preferably used.
  • the insulator 222 prevents oxygen from being released from the metal oxide 230 or impurities such as hydrogen from entering the metal oxide 230 from the peripheral portion of the transistor 200A. Acts as a restraining layer.
  • aluminum oxide, bismuth oxide, germanium oxide, niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, or zirconium oxide may be added to these insulators.
  • these insulators may be nitrided. Silicon oxide, silicon oxynitride, or silicon nitride may be stacked over the above insulator.
  • the insulator 222 is, for example, a so-called high oxide such as aluminum oxide, hafnium oxide, tantalum oxide, zirconium oxide, lead zirconate titanate (PZT), strontium titanate (SrTiO 3 ) or (Ba,Sr)TiO 3 (BST).
  • Insulators including -k materials may be used in single layers or stacks. As transistors are miniaturized and highly integrated, thinning of gate insulators may cause problems such as leakage current. By using a high-k material for the insulator functioning as the gate insulator, the gate potential during transistor operation can be reduced while maintaining the physical film thickness.
  • the insulator 222 and the insulator 224 may have a stacked structure of two or more layers. In that case, it is not limited to a laminated structure made of the same material, and a laminated structure made of different materials may be used. For example, an insulator similar to the insulator 224 may be provided under the insulator 222 .
  • Metal oxide 230 has metal oxide 230a, metal oxide 230b over metal oxide 230a, and metal oxide 230c over metal oxide 230b. Having the metal oxide 230a under the metal oxide 230b can suppress the diffusion of impurities from the structure formed below the metal oxide 230a to the metal oxide 230b. In addition, by having the metal oxide 230c on the metal oxide 230b, it is possible to suppress the diffusion of impurities from the structure formed above the metal oxide 230c to the metal oxide 230b.
  • the metal oxide 230 preferably has a laminated structure of a plurality of oxide layers with different atomic ratios of metal atoms.
  • the metal oxide 230 contains at least indium (In) and the element M
  • the ratio is preferably higher than the ratio of the number of atoms of the element M contained in the metal oxide 230b to the number of atoms of all elements forming the metal oxide 230b.
  • the atomic number ratio of the element M contained in the metal oxide 230a to In is larger than the atomic number ratio of the element M contained in the metal oxide 230b to In.
  • the metal oxide 230c can be a metal oxide that can be used for the metal oxide 230a or the metal oxide 230b.
  • the energy of the conduction band bottom of the metal oxide 230a and the metal oxide 230c be higher than the energy of the conduction band bottom of the metal oxide 230b.
  • the electron affinities of the metal oxides 230a and 230c are preferably smaller than the electron affinities of the metal oxide 230b.
  • the metal oxide 230c is preferably a metal oxide that can be used for the metal oxide 230a.
  • the ratio of the number of atoms of the element M contained in the metal oxide 230c to the number of atoms of all the elements forming the metal oxide 230c is higher than the number of atoms of all the elements forming the metal oxide 230b.
  • the atomic ratio of the element M contained in the metal oxide 230c to In is preferably higher than the atomic ratio of the element M contained in the metal oxide 230b to In.
  • the energy level at the bottom of the conduction band changes smoothly at the junction of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c.
  • the energy level of the bottom of the conduction band at the junction of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c continuously changes or continuously joins.
  • the metal oxide 230a and the metal oxide 230b, and the metal oxide 230b and the metal oxide 230c have a common element (main component) other than oxygen, so that the defect level density is low.
  • Mixed layers can be formed.
  • the metal oxide 230b is an In-Ga-Zn oxide
  • the metal oxide 230a and the metal oxide 230c may be In-Ga-Zn oxide, Ga-Zn oxide, gallium oxide, or the like.
  • the metal oxide 230c may have a laminated structure.
  • a stacked structure of In--Ga--Zn oxide and Ga--Zn oxide over the In--Ga--Zn oxide, or an In--Ga--Zn oxide and over the In--Ga--Zn oxide can be used.
  • a stacked structure of an In--Ga--Zn oxide and an oxide not containing In may be used as the metal oxide 230c.
  • the metal oxide 230c has a laminated structure
  • In: Ga: Zn 4:2:3 [atomic number ratio] and a laminated structure with gallium oxide.
  • the main path of carriers becomes the metal oxide 230b.
  • the defect level density at the interface between the metal oxide 230a and the metal oxide 230b and at the interface between the metal oxide 230b and the metal oxide 230c can be reduced. can be lowered. Therefore, the influence of interface scattering on carrier conduction is reduced, and the transistor 200A can obtain high on-current and high frequency characteristics.
  • the constituent elements of the metal oxide 230c are It is expected to suppress the diffusion to the insulator 250 side.
  • the metal oxide 230c has a stacked structure, and the oxide that does not contain In is positioned above the stacked structure, so that In that can diffuse toward the insulator 250 can be suppressed. Since the insulator 250 functions as a gate insulator, the characteristics of the transistor deteriorate when In is diffused. Therefore, by forming the metal oxide 230c into a stacked structure, a highly reliable display device can be provided.
  • a conductor 242 (a conductor 242a and a conductor 242b) functioning as a source electrode and a drain electrode is provided over the metal oxide 230b.
  • Conductors 242 include aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium, beryllium, indium, ruthenium, iridium, strontium, and lanthanum. It is preferable to use a metal element selected from, an alloy containing the above-described metal elements as a component, or an alloy in which the above-described metal elements are combined.
  • tantalum nitride, titanium nitride, tungsten, nitride containing titanium and aluminum, nitride containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, oxide containing strontium and ruthenium, oxide containing lanthanum and nickel, and the like are used. is preferred.
  • tantalum nitride, titanium nitride, nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, and oxides containing lanthanum and nickel are difficult to oxidize. It is preferable because it is a conductive material or a material that maintains conductivity even after absorbing oxygen.
  • the oxygen concentration in the vicinity of the conductor 242 of the metal oxide 230 may be reduced.
  • a metal compound layer containing the metal contained in the conductor 242 and the components of the metal oxide 230 may be formed in the vicinity of the conductor 242 of the metal oxide 230. In such a case, the carrier density increases in the region of the metal oxide 230 near the conductor 242, and the region becomes a low resistance region.
  • a region between the conductor 242a and the conductor 242b is formed so as to overlap with the opening of the insulator 280.
  • the conductor 260 can be arranged in a self-aligned manner between the conductor 242a and the conductor 242b.
  • Insulator 250 functions as a gate insulator.
  • the insulator 250 is preferably placed in contact with the top surface of the metal oxide 230c.
  • silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, silicon oxide to which fluorine is added, silicon oxide to which carbon is added, silicon oxide to which carbon and nitrogen are added, or silicon oxide having vacancies is used. be able to.
  • silicon oxide and silicon oxynitride are preferable because they are stable against heat.
  • the insulator 250 preferably has a reduced impurity concentration such as water or hydrogen.
  • the thickness of the insulator 250 is preferably 1 nm or more and 20 nm or less.
  • a metal oxide may be provided between the insulator 250 and the conductor 260 .
  • the metal oxide preferably suppresses oxygen diffusion from the insulator 250 to the conductor 260 . Accordingly, oxidation of the conductor 260 by oxygen in the insulator 250 can be suppressed.
  • the metal oxide may function as part of the gate insulator. Therefore, in the case where silicon oxide, silicon oxynitride, or the like is used for the insulator 250, a metal oxide that is a high-k material with a high dielectric constant is preferably used as the metal oxide.
  • the gate insulator has a stacked-layer structure of the insulator 250 and the metal oxide, the stacked-layer structure can be stable against heat and have a high relative dielectric constant. Therefore, the gate potential applied during transistor operation can be reduced while maintaining the physical film thickness of the gate insulator. Also, the equivalent oxide thickness (EOT) of the insulator that functions as the gate insulator can be reduced.
  • EOT equivalent oxide thickness
  • a metal oxide containing one or more selected from hafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, germanium, magnesium, or the like can be used.
  • the conductor 260 is shown as having a two-layer structure in FIG. 19, it may have a single-layer structure or a laminated structure of three or more layers.
  • the conductor 260a has the function of suppressing the diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, nitrogen oxide molecules (N 2 O, NO, NO 2 etc.), copper atoms and the like. It is preferable to use a conductor having a Alternatively, it is preferable to use a conductive material having a function of suppressing diffusion of oxygen (eg, at least one of oxygen atoms, oxygen molecules, and the like).
  • the conductor 260a has a function of suppressing diffusion of oxygen
  • oxygen contained in the insulator 250 can suppress oxidation of the conductor 260b and a decrease in conductivity.
  • the conductive material having a function of suppressing diffusion of oxygen tantalum, tantalum nitride, ruthenium, ruthenium oxide, or the like is preferably used, for example.
  • a conductive material containing tungsten, copper, or aluminum as its main component is preferably used for the conductor 260b.
  • the conductor 260 since the conductor 260 also functions as a wiring, a conductor with high conductivity is preferably used.
  • a conductive material whose main component is tungsten, copper, or aluminum can be used.
  • the conductor 260b may have a layered structure, for example, a layered structure of titanium or titanium nitride and the above conductive material.
  • the side surfaces of the metal oxide 230 are covered with the conductor 260 in the region where the metal oxide 230b does not overlap with the conductor 242, in other words, the channel formation region of the metal oxide 230. are placed.
  • the insulator 254 preferably functions as a barrier insulating film that prevents impurities such as water or hydrogen from entering the transistor 200A from the insulator 280 side.
  • insulator 254 preferably has a lower hydrogen permeability than insulator 224 .
  • the insulator 254 includes the sides of the metal oxide 230c, the top and sides of the conductor 242a, the top and sides of the conductor 242b, and the metal oxide 230a and the metal oxide 230b. It preferably touches the sides as well as the top surface of the insulator 224 .
  • hydrogen contained in the insulator 280 enters the metal oxide 230 from the top surface or the side surface of the conductor 242a, the conductor 242b, the metal oxide 230a, the metal oxide 230b, and the insulator 224. can be suppressed.
  • the insulator 254 preferably has a function of suppressing the diffusion of oxygen (eg, at least one of oxygen atoms, oxygen molecules, and the like) (the oxygen is less permeable).
  • insulator 254 preferably has a lower oxygen permeability than insulator 280 or insulator 224 .
  • the insulator 254 is preferably deposited using a sputtering method.
  • oxygen can be added to the vicinity of a region of the insulator 224 which is in contact with the insulator 254 . Accordingly, oxygen can be supplied from the region into the metal oxide 230 through the insulator 224 .
  • the insulator 254 has a function of suppressing upward diffusion of oxygen, diffusion of oxygen from the metal oxide 230 to the insulator 280 can be prevented.
  • the insulator 222 has a function of suppressing diffusion of oxygen downward, oxygen can be prevented from diffusing from the metal oxide 230 to the substrate side. In this manner, oxygen is supplied to the channel formation region of metal oxide 230 . Accordingly, oxygen vacancies in the metal oxide 230 can be reduced, and the normally-on state of the transistor can be suppressed.
  • an insulator containing an oxide of one or both of aluminum and hafnium is preferably deposited.
  • the insulator containing oxides of one or both of aluminum and hafnium aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate), or the like is preferably used.
  • the insulator 224, the insulator 250, and the metal oxide 230 are covered with the insulator 254 having a barrier property against hydrogen; and isolated from the insulator 250 .
  • entry of impurities such as hydrogen from the outside of the transistor 200A can be suppressed, so that the transistor 200A can have good electrical characteristics and reliability.
  • the insulator 280 is provided over the insulator 224 , the metal oxide 230 , and the conductor 242 with the insulator 254 interposed therebetween.
  • the insulator 280 is formed using silicon oxide, silicon oxynitride, silicon nitride oxide, silicon oxide to which fluorine is added, silicon oxide to which carbon is added, silicon oxide to which carbon and nitrogen are added, silicon oxide having vacancies, or the like. It is preferable to have In particular, silicon oxide and silicon oxynitride are preferable because they are thermally stable. In particular, a material such as silicon oxide, silicon oxynitride, or silicon oxide having vacancies is preferable because a region containing oxygen that is released by heating can be easily formed.
  • the concentration of impurities such as water or hydrogen in the insulator 280 is reduced. Also, the upper surface of the insulator 280 may be flattened.
  • the insulator 274 preferably functions as a barrier insulating film that prevents impurities such as water or hydrogen from entering the insulator 280 from above.
  • the insulator 274 an insulator that can be used for the insulator 214, the insulator 254, or the like may be used, for example.
  • An insulator 281 functioning as an interlayer film is preferably provided over the insulator 274 .
  • the insulator 281 preferably has a reduced concentration of impurities such as water or hydrogen in the film.
  • the conductors 240 a and 240 b are arranged in openings formed in the insulators 281 , 274 , 280 , and 254 .
  • the conductor 240a and the conductor 240b are provided to face each other with the conductor 260 interposed therebetween. Note that the top surfaces of the conductors 240 a and 240 b may be flush with the top surface of the insulator 281 .
  • the insulator 241a is provided in contact with the inner walls of the openings of the insulator 281, the insulator 274, the insulator 280, and the insulator 254, and the first conductor of the conductor 240a is formed in contact with the side surface of the insulator 241a. ing.
  • a conductor 242a is positioned at least part of the bottom of the opening, and the conductor 240a is in contact with the conductor 242a.
  • the insulator 241b is provided in contact with the inner walls of the openings of the insulator 281, the insulator 274, the insulator 280, and the insulator 254, and the first conductor of the conductor 240b is formed in contact with the side surface of the insulator 241b. It is A conductor 242b is positioned at least part of the bottom of the opening, and the conductor 240b is in contact with the conductor 242b.
  • a conductive material containing tungsten, copper, or aluminum as its main component is preferably used for the conductors 240a and 240b. Further, the conductor 240a and the conductor 240b may have a laminated structure.
  • the conductor in contact with the metal oxide 230a, the metal oxide 230b, the conductor 242, the insulator 254, the insulator 280, the insulator 274, and the insulator 281 contains the above water.
  • a conductor having a function of suppressing diffusion of impurities such as hydrogen is preferably used.
  • tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, ruthenium oxide, or the like is preferably used.
  • the conductive material having a function of suppressing diffusion of impurities such as water or hydrogen may be used in a single layer or a stacked layer.
  • the conductive material By using the conductive material, absorption of oxygen added to the insulator 280 by the conductors 240a and 240b can be suppressed. In addition, impurities such as water or hydrogen from a layer above the insulator 281 can be prevented from entering the metal oxide 230 through the conductors 240a and 240b.
  • An insulator that can be used for the insulator 254 or the like may be used as the insulator 241a and the insulator 241b, for example. Since the insulators 241a and 241b are provided in contact with the insulator 254, impurities such as water or hydrogen from the insulator 280 or the like are prevented from entering the metal oxide 230 through the conductors 240a and 240b. can. In addition, absorption of oxygen contained in the insulator 280 by the conductors 240a and 240b can be suppressed.
  • a conductor functioning as a wiring may be arranged in contact with the top surface of the conductor 240a and the top surface of the conductor 240b.
  • a conductive material containing tungsten, copper, or aluminum as a main component is preferably used for the conductor functioning as the wiring.
  • the conductor may have a laminated structure, for example, a laminated structure of titanium or titanium nitride and the above conductive material. The conductor may be formed so as to be embedded in an opening provided in the insulator.
  • an insulator substrate, a semiconductor substrate, or a conductor substrate may be used, for example.
  • insulator substrates include glass substrates, quartz substrates, sapphire substrates, stabilized zirconia substrates (yttria stabilized zirconia substrates, etc.), resin substrates, and the like.
  • semiconductor substrates include semiconductor substrates such as silicon and germanium, and compound semiconductor substrates made of silicon carbide, silicon germanium, gallium arsenide, indium phosphide, zinc oxide, and gallium oxide.
  • semiconductor substrate having an insulator region inside the semiconductor substrate such as an SOI (Silicon On Insulator) substrate.
  • Examples of conductive substrates include graphite substrates, metal substrates, alloy substrates, and conductive resin substrates. Alternatively, there are a substrate having a metal nitride, a substrate having a metal oxide, and the like. Furthermore, there are a substrate in which a conductor or a semiconductor is provided on an insulating substrate, a substrate in which a semiconductor substrate is provided with a conductor or an insulator, a substrate in which a conductor substrate is provided with a semiconductor or an insulator, and the like. Alternatively, these substrates provided with elements may be used. Elements provided on the substrate include a capacitive element, a resistance element, a switch element, a light emitting element, a memory element, and the like.
  • Insulators examples include oxides, nitrides, oxynitrides, oxynitrides, metal oxides, metal oxynitrides, metal oxynitrides, and the like having insulating properties.
  • thinning of gate insulators may cause problems such as leakage current.
  • a high-k material for an insulator functioning as a gate insulator voltage reduction during transistor operation can be achieved while maintaining a physical film thickness.
  • a material with a low dielectric constant for the insulator functioning as an interlayer film parasitic capacitance generated between wirings can be reduced. Therefore, the material should be selected according to the function of the insulator.
  • Gallium oxide, hafnium oxide, zirconium oxide, oxides containing aluminum and hafnium, oxynitrides containing aluminum and hafnium, oxides containing silicon and hafnium, and oxynitride containing silicon and hafnium are used as insulators with a high dielectric constant. and nitrides with silicon and hafnium.
  • Insulators with a low dielectric constant include silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, silicon oxide to which fluorine is added, silicon oxide to which carbon is added, silicon oxide to which carbon and nitrogen are added, and vacancies. There are silicon oxide, resin, and the like.
  • a transistor including an oxide semiconductor is surrounded by an insulator (such as the insulator 214, the insulator 222, the insulator 254, and the insulator 274) that has a function of suppressing permeation of impurities such as hydrogen and oxygen.
  • an insulator such as the insulator 214, the insulator 222, the insulator 254, and the insulator 274.
  • Insulators having a function of suppressing permeation of impurities such as hydrogen and oxygen include, for example, boron, carbon, nitrogen, oxygen, fluorine, magnesium, aluminum, silicon, phosphorus, chlorine, argon, gallium, germanium, yttrium, zirconium, Insulators containing lanthanum, neodymium, hafnium, or tantalum may be used in single layers or stacks.
  • an insulator having a function of suppressing permeation of impurities such as hydrogen and oxygen aluminum oxide, magnesium oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, Alternatively, a metal oxide such as tantalum oxide, or a metal nitride such as aluminum nitride, aluminum titanium nitride, titanium nitride, silicon nitride oxide, or silicon nitride can be used.
  • An insulator that functions as a gate insulator preferably has a region containing oxygen that is released by heating. For example, by forming a structure in which silicon oxide or silicon oxynitride having a region containing oxygen released by heating is in contact with the metal oxide 230, oxygen vacancies in the metal oxide 230 can be compensated.
  • Conductors include aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium, beryllium, indium, ruthenium, iridium, strontium, lanthanum, etc. It is preferable to use a metal element selected from, an alloy containing the above-described metal elements as a component, or an alloy in which the above-described metal elements are combined.
  • tantalum nitride, titanium nitride, tungsten, nitride containing titanium and aluminum, nitride containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, oxide containing strontium and ruthenium, oxide containing lanthanum and nickel, and the like are used. is preferred. Also, tantalum nitride, titanium nitride, nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, and oxides containing lanthanum and nickel are difficult to oxidize.
  • a conductive material or a material that maintains conductivity even after absorbing oxygen.
  • a semiconductor with high electrical conductivity typified by polycrystalline silicon containing an impurity element such as phosphorus, or a silicide such as nickel silicide may be used.
  • a plurality of conductors formed of any of the above materials may be stacked and used.
  • a laminated structure in which the material containing the metal element described above and the conductive material containing oxygen are combined may be used.
  • a laminated structure may be employed in which the material containing the metal element described above and the conductive material containing nitrogen are combined.
  • a laminated structure may be employed in which the material containing the metal element described above, the conductive material containing oxygen, and the conductive material containing nitrogen are combined.
  • a conductor functioning as a gate electrode has a stacked-layer structure in which a material containing the above metal element and a conductive material containing oxygen are combined. is preferred.
  • a conductive material containing oxygen is preferably provided on the channel formation region side.
  • a conductive material containing oxygen and a metal element contained in a metal oxide in which a channel is formed is preferably used as a conductor functioning as a gate electrode.
  • a conductive material containing the metal element and nitrogen described above may be used.
  • a conductive material containing nitrogen such as titanium nitride or tantalum nitride may be used.
  • indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, and silicon were added.
  • Indium tin oxide may also be used.
  • indium gallium zinc oxide containing nitrogen may be used.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • FIG. 20A is a diagram illustrating classification of crystal structures of oxide semiconductors, typically IGZO (a metal oxide containing In, Ga, and Zn).
  • IGZO a metal oxide containing In, Ga, and Zn
  • oxide semiconductors are roughly classified into “amorphous”, “crystalline”, and “crystal".
  • “Amorphous” includes completely amorphous.
  • “Crystalline” includes CAAC (c-axis-aligned crystalline), nc (nanocrystalline), and CAC (cloud-aligned composite) (excluding single crystal and poly crystal).
  • the classification of “Crystalline” excludes single crystal, poly crystal, and completely amorphous.
  • “Crystal” includes single crystal and poly crystal.
  • the structure within the thick frame shown in FIG. 20A is an intermediate state between "amorphous” and “crystal”, and is a structure belonging to the new boundary region (new crystalline phase). . That is, the structure can be rephrased as a structure completely different from the energetically unstable “Amorphous” and “Crystal”.
  • FIG. 20B shows an XRD spectrum obtained by GIXD (Grazing-Incidence XRD) measurement of a CAAC-IGZO film classified as "Crystalline".
  • the GIXD method is also called a thin film method or a Seemann-Bohlin method.
  • the XRD spectrum obtained by the GIXD measurement shown in FIG. 20B is simply referred to as the XRD spectrum.
  • the thickness of the CAAC-IGZO film shown in FIG. 20B is 500 nm.
  • the crystal structure of a film or substrate can be evaluated by a diffraction pattern (also referred to as a nano beam electron diffraction pattern) observed by nano beam electron diffraction (NBED).
  • a diffraction pattern also referred to as a nano beam electron diffraction pattern
  • NBED nano beam electron diffraction
  • oxide semiconductors may be classified differently from that in FIG. 20A when its crystal structure is focused.
  • oxide semiconductors are classified into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors.
  • non-single-crystal oxide semiconductors include the above CAAC-OS and nc-OS.
  • Non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, amorphous-like oxide semiconductors (a-like OS), amorphous oxide semiconductors, and the like.
  • CAAC-OS is an oxide semiconductor that includes a plurality of crystal regions, and the c-axes of the plurality of crystal regions are oriented in a specific direction. Note that the specific direction is the thickness direction of the CAAC-OS film, the normal direction to the formation surface of the CAAC-OS film, or the normal direction to the surface of the CAAC-OS film.
  • a crystalline region is a region having periodicity in atomic arrangement. If the atomic arrangement is regarded as a lattice arrangement, the crystalline region is also a region with a uniform lattice arrangement.
  • CAAC-OS has a region where a plurality of crystal regions are connected in the a-b plane direction, and the region may have strain.
  • the strain refers to a portion where the orientation of the lattice arrangement changes between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement in a region where a plurality of crystal regions are connected. That is, CAAC-OS is an oxide semiconductor that is c-axis oriented and has no obvious orientation in the ab plane direction.
  • each of the plurality of crystal regions is composed of one or a plurality of minute crystals (crystals having a maximum diameter of less than 10 nm).
  • the maximum diameter of the crystalline region is less than 10 nm.
  • the size of the crystal region may be about several tens of nanometers.
  • CAAC-OS is a layer containing indium (In) and oxygen ( It tends to have a layered crystal structure (also referred to as a layered structure) in which an In layer) and a layer containing the element M, zinc (Zn), and oxygen (hereinafter, a (M, Zn) layer) are laminated.
  • the (M, Zn) layer may contain indium.
  • the In layer contains the element M.
  • the In layer may contain Zn.
  • the layered structure is observed as a lattice image, for example, in a high-resolution TEM image.
  • a plurality of bright points are observed in the electron beam diffraction pattern of the CAAC-OS film.
  • a certain spot and another spot are observed at point-symmetrical positions with respect to the spot of the incident electron beam that has passed through the sample (also referred to as a direct spot) as the center of symmetry.
  • the lattice arrangement in the crystal region is basically a hexagonal lattice, but the unit lattice is not always regular hexagon and may be non-regular hexagon. Moreover, the distortion may have a lattice arrangement of pentagons, heptagons, or the like. Note that in CAAC-OS, no clear crystal grain boundary can be observed even near the strain. That is, it can be seen that the distortion of the lattice arrangement suppresses the formation of grain boundaries. This is because the CAAC-OS can tolerate distortion due to the fact that the arrangement of oxygen atoms is not dense in the ab plane direction, or the bond distance between atoms changes due to the substitution of metal atoms. It is considered to be for
  • a crystal structure in which clear grain boundaries are confirmed is called a so-called polycrystal.
  • a grain boundary becomes a recombination center, and there is a high possibility that carriers are trapped and cause a decrease in the on-state current of a transistor, a decrease in field-effect mobility, and the like. Therefore, a CAAC-OS in which no clear grain boundaries are observed is one of crystalline oxides having a crystal structure suitable for a semiconductor layer of a transistor.
  • a structure containing Zn is preferable for forming a CAAC-OS.
  • In--Zn oxide and In--Ga--Zn oxide are preferable because they can suppress the generation of grain boundaries more than In oxide.
  • a CAAC-OS is an oxide semiconductor with high crystallinity and no clear grain boundaries. Therefore, it can be said that the decrease in electron mobility due to grain boundaries is less likely to occur in CAAC-OS.
  • a CAAC-OS can be said to be an oxide semiconductor with few impurities or defects (such as oxygen vacancies). Therefore, an oxide semiconductor including CAAC-OS has stable physical properties. Therefore, an oxide semiconductor including CAAC-OS is resistant to heat and has high reliability.
  • CAAC-OS is also stable against high temperatures (so-called thermal budget) in the manufacturing process. Therefore, the use of the CAAC-OS for the OS transistor can increase the degree of freedom in the manufacturing process.
  • nc-OS has periodic atomic arrangement in a minute region (eg, a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm).
  • the nc-OS has minute crystals.
  • the size of the minute crystal is, for example, 1 nm or more and 10 nm or less, particularly 1 nm or more and 3 nm or less, the minute crystal is also called a nanocrystal.
  • nc-OS does not show regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed in the entire film.
  • an nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor depending on the analysis method.
  • an nc-OS film is subjected to structural analysis using an XRD apparatus, out-of-plane XRD measurement using ⁇ /2 ⁇ scanning does not detect a peak indicating crystallinity.
  • an nc-OS film is subjected to electron beam diffraction (also referred to as selected area electron beam diffraction) using an electron beam with a probe diameter larger than that of nanocrystals (for example, 50 nm or more), a diffraction pattern such as a halo pattern is obtained. is observed.
  • an nc-OS film is subjected to electron diffraction (also referred to as nanobeam electron diffraction) using an electron beam with a probe diameter close to or smaller than the size of a nanocrystal (for example, 1 nm or more and 30 nm or less)
  • an electron beam diffraction pattern is obtained in which a plurality of spots are observed within a ring-shaped area centered on the direct spot.
  • An a-like OS is an oxide semiconductor having a structure between an nc-OS and an amorphous oxide semiconductor.
  • An a-like OS has void or low density regions. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS. In addition, the a-like OS has a higher hydrogen concentration in the film than the nc-OS and the CAAC-OS.
  • CAC-OS relates to material composition.
  • CAC-OS is, for example, one structure of a material in which elements constituting a metal oxide are unevenly distributed with a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or in the vicinity thereof.
  • the metal oxide one or more metal elements are unevenly distributed, and the region having the metal element has a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or a size in the vicinity thereof.
  • the mixed state is also called mosaic or patch.
  • CAC-OS is a structure in which the material is separated into a first region and a second region to form a mosaic shape, and the first region is distributed in the film (hereinafter, also referred to as a cloud shape). ). That is, CAC-OS is a composite metal oxide in which the first region and the second region are mixed.
  • the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in the In—Ga—Zn oxide are represented by [In], [Ga], and [Zn], respectively.
  • the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film.
  • the second region is a region where [Ga] is greater than [Ga] in the composition of the CAC-OS film.
  • the first region is a region in which [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region.
  • the second region is a region in which [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.
  • the first region is a region mainly composed of indium oxide, indium zinc oxide, or the like.
  • the second region is a region containing gallium oxide, gallium zinc oxide, or the like as a main component. That is, the first region can be rephrased as a region containing In as a main component. Also, the second region can be rephrased as a region containing Ga as a main component.
  • a region containing In as the main component (first 1 region) and a region containing Ga as a main component (second region) are unevenly distributed and can be confirmed to have a mixed structure.
  • the conductivity attributed to the first region and the insulation attributed to the second region complementarily act to provide a switching function (on/off function).
  • a switching function on/off function
  • CAC-OS a part of the material has a conductive function
  • a part of the material has an insulating function
  • the whole material has a semiconductor function.
  • Oxide semiconductors have various structures and each has different characteristics.
  • An oxide semiconductor of one embodiment of the present invention includes two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, a CAC-OS, an nc-OS, and a CAAC-OS. may
  • an oxide semiconductor with low carrier concentration is preferably used for a transistor.
  • the carrier concentration of the oxide semiconductor is 1 ⁇ 10 17 cm ⁇ 3 or less, preferably 1 ⁇ 10 15 cm ⁇ 3 or less, more preferably 1 ⁇ 10 13 cm ⁇ 3 or less, more preferably 1 ⁇ 10 11 cm ⁇ 3 or less. 3 or less, more preferably less than 1 ⁇ 10 10 cm ⁇ 3 and 1 ⁇ 10 ⁇ 9 cm ⁇ 3 or more.
  • the impurity concentration in the oxide semiconductor film may be lowered to lower the defect level density.
  • a low impurity concentration and a low defect level density are referred to as high-purity intrinsic or substantially high-purity intrinsic.
  • an oxide semiconductor with a low carrier concentration is sometimes referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor.
  • the trap level density may also be low.
  • a charge trapped in a trap level of an oxide semiconductor takes a long time to disappear and may behave like a fixed charge. Therefore, a transistor whose channel formation region is formed in an oxide semiconductor with a high trap level density might have unstable electrical characteristics.
  • Impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon, and the like.
  • the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon in the vicinity of the interface with the oxide semiconductor are 2 ⁇ 10 18 atoms/cm 3 or less, preferably 2 ⁇ 10 atoms/cm 3 or less. 10 17 atoms/cm 3 or less.
  • the concentration of alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS is set to 1 ⁇ 10 18 atoms/cm 3 or less, preferably 2 ⁇ 10 16 atoms/cm 3 or less.
  • the nitrogen concentration in the oxide semiconductor obtained by SIMS is less than 5 ⁇ 10 19 atoms/cm 3 , preferably 5 ⁇ 10 18 atoms/cm 3 or less, more preferably 1 ⁇ 10 18 atoms/cm 3 or less. , more preferably 5 ⁇ 10 17 atoms/cm 3 or less.
  • Hydrogen contained in an oxide semiconductor reacts with oxygen that bonds to a metal atom to form water, which may cause oxygen vacancies. When hydrogen enters the oxygen vacancies, electrons, which are carriers, may be generated. In addition, part of hydrogen may bond with oxygen that bonds with a metal atom to generate an electron, which is a carrier. Therefore, a transistor including an oxide semiconductor containing hydrogen is likely to have normally-on characteristics. Therefore, hydrogen in the oxide semiconductor is preferably reduced as much as possible.
  • the hydrogen concentration obtained by SIMS is less than 1 ⁇ 10 20 atoms/cm 3 , preferably less than 1 ⁇ 10 19 atoms/cm 3 , more preferably less than 5 ⁇ 10 18 atoms/cm. Less than 3 , more preferably less than 1 ⁇ 10 18 atoms/cm 3 .
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • FIG. 21A is a diagram showing the appearance of the head mounted display 8200.
  • FIG. 21A is a diagram showing the appearance of the head mounted display 8200.
  • the head mounted display 8200 has a mounting portion 8201, a lens 8202, a main body 8203, a display portion 8204, a cable 8205 and the like.
  • a battery 8206 is built in the mounting portion 8201 .
  • Cable 8205 supplies power from battery 8206 to body 8203 .
  • a main body 8203 includes a wireless receiver or the like, and can display an image corresponding to received image data or the like on the display portion 8204 .
  • the user's line of sight can be used as an input means by capturing the movement of the user's eyeballs and eyelids with a camera provided in the main body 8203 and calculating the coordinates of the user's line of sight based on the information. can.
  • the mounting portion 8201 may be provided with a plurality of electrodes at positions where it touches the user.
  • the main body 8203 may have a function of recognizing the line of sight of the user by detecting the current flowing through the electrodes as the user's eyeballs move. It may also have a function of monitoring the user's pulse by detecting the current flowing through the electrode.
  • the mounting unit 8201 may have various sensors such as a temperature sensor, a pressure sensor, an acceleration sensor, etc., and may have a function of displaying the biological information of the user on the display unit 8204 . Alternatively, the movement of the user's head or the like may be detected, and the image displayed on the display unit 8204 may be changed according to the movement.
  • the display device of one embodiment of the present invention can be applied to the display portion 8204 .
  • the power consumption of the head mounted display 8200 can be reduced, so that the head mounted display 8200 can be used continuously for a long period of time.
  • the size and weight of the battery 8206 can be reduced, so that the head mounted display 8200 can be reduced in size and weight. This reduces the burden on the user of the head mounted display 8200, making it less likely that the user will feel fatigue.
  • FIG. 21B, 21C and 21D are diagrams showing the appearance of the head mounted display 8300.
  • FIG. A head mounted display 8300 includes a housing 8301 , a display portion 8302 , a band-shaped fixture 8304 , and a pair of lenses 8305 .
  • a battery 8306 is incorporated in the housing 8301, and power can be supplied from the battery 8306 to the display portion 8302 and the like.
  • the user can see the display on the display portion 8302 through the lens 8305 .
  • the display portion 8302 By arranging the display portion 8302 in a curved manner, the user can feel a high presence.
  • the structure in which one display portion 8302 is provided is exemplified in this embodiment mode, the present invention is not limited to this and, for example, a structure in which two display portions 8302 are provided may be employed. In this case, if one display unit is arranged for one eye of the user, it is possible to perform three-dimensional display using parallax.
  • the display device of one embodiment of the present invention can be applied to the display portion 8302 .
  • the power consumption of the head mounted display 8300 can be reduced, so that the head mounted display 8300 can be used continuously for a long period of time.
  • the size and weight of the battery 8306 can be reduced, so that the head mounted display 8300 can be reduced in size and weight. This reduces the burden on the user of the head mounted display 8300, making it less likely that the user will feel tired.
  • FIGS. 22A and 22B show examples of electronic devices different from the electronic devices shown in FIGS. 21A to 21D.
  • the electronic device shown in FIGS. 22A and 22B includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006, sensors 9007 (force, displacement, position, speed , acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared rays measuring function), and a battery 9009 and the like.
  • the electronic devices shown in FIGS. 22A and 22B have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date, time, etc., and a function to control processing by various software (programs).
  • wireless communication function function to connect to various computer networks using wireless communication function, function to transmit or receive various data using wireless communication function, read programs or data recorded on recording media It can have a function of displaying on a display portion, and the like.
  • the functions that the electronic devices shown in FIGS. 22A and 22B can have are not limited to these, and can have various functions.
  • the electronic device may have a plurality of display portions.
  • a camera or the like is provided in the electronic device to take still images, to take moving images, to save the shot images in a recording medium (external or built into the camera), and to display the shot images on the display unit. and the like.
  • FIG. 22A is a perspective view showing a mobile information terminal 9101.
  • the mobile information terminal 9101 has one or a plurality of functions selected from, for example, a telephone, notebook, information browsing device, and the like. Specifically, it can be used as a smartphone. Also, the mobile information terminal 9101 can display characters or images on its multiple surfaces. For example, three operation buttons 9050 (also referred to as operation icons or simply icons) can be displayed on one surface of the display portion 9001 . In addition, information 9051 indicated by a dashed rectangle can be displayed on another surface of the display portion 9001 .
  • Examples of the information 9051 include a display notifying an incoming e-mail or SNS (social networking service) or a phone call, the title of the e-mail or SNS, the name of the sender of the e-mail or SNS, the date and time, the time, There are remaining battery power, strength of antenna reception, and so on.
  • an operation button 9050 or the like may be displayed instead of the information 9051 at the position where the information 9051 is displayed.
  • the display device of one embodiment of the present invention can be applied to the portable information terminal 9101 . Accordingly, power consumption of the portable information terminal 9101 can be reduced, so that the portable information terminal 9101 can be used continuously for a long period of time. Further, by reducing the power consumption of the portable information terminal 9101, the size and weight of the battery 9009 can be reduced; therefore, the portable information terminal 9101 can be reduced in size and weight. Accordingly, portability of the portable information terminal 9101 can be improved.
  • FIG. 22B is a perspective view showing a wristwatch-type personal digital assistant 9200.
  • the personal digital assistant 9200 can run various applications such as mobile phone, e-mail, text viewing and writing, music playback, Internet communication, computer games, and the like.
  • the display portion 9001 has a curved display surface, and display can be performed along the curved display surface.
  • FIG. 22B shows an example in which a time 9251, an operation button 9252 (also referred to as an operation icon or simply an icon), and content 9253 are displayed on the display unit 9001.
  • FIG. Content 9253 can be, for example, a video.
  • the mobile information terminal 9200 is capable of performing short-range wireless communication according to communication standards. For example, by intercommunicating with a headset capable of wireless communication, hands-free communication is also possible.
  • the portable information terminal 9200 has a connection terminal 9006 and can directly exchange data with another information terminal through a connector. Also, charging can be performed through the connection terminal 9006 . Note that the charging operation may be performed by wireless power supply without using the connection terminal 9006 .
  • the display device of one embodiment of the present invention can be applied to the portable information terminal 9200 . Accordingly, power consumption of the portable information terminal 9200 can be reduced, so that the portable information terminal 9200 can be used continuously for a long period of time. Further, by reducing the power consumption of the portable information terminal 9200, the size and weight of the battery 9009 can be reduced; therefore, the portable information terminal 9200 can be reduced in size and weight. Thereby, the portability of the portable information terminal 9200 can be improved.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • each embodiment can be combined with any structure described in another embodiment as appropriate to be one embodiment of the present invention. Moreover, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be combined as appropriate.
  • the content (may be part of the content) described in one embodiment may be another content (may be part of the content) described in that embodiment, and/or one or more
  • the contents described in another embodiment (or part of the contents) can be applied, combined, or replaced.
  • the content described in the embodiments means the content described using various drawings or the content described using the sentences described in the specification in each embodiment.
  • constituent elements are classified by function and shown as blocks independent of each other.
  • it is difficult to separate the constituent elements according to their functions and there may be cases where one circuit is associated with a plurality of functions or a single function is associated with a plurality of circuits.
  • the blocks in the block diagrams are not limited to the elements described in the specification and may be interchanged as appropriate depending on the context.
  • electrode and “wiring” in this specification and the like do not functionally limit these components.
  • an “electrode” may be used as part of a “wiring” and vice versa.
  • the terms “electrodes” and “wirings” also include the case where a plurality of “electrodes” or “wirings” are integrally formed.
  • a voltage is a potential difference from a reference potential.
  • the reference potential is a ground voltage
  • the voltage can be translated into a potential.
  • Ground potential does not necessarily mean 0V. Note that the potential is relative, and the potential applied to the wiring or the like may be changed depending on the reference potential.
  • a switch has a function of being in a conducting state (on state) or a non-conducting state (off state) and controlling whether or not current flows.
  • a switch has a function of selecting and switching a path through which current flows.
  • the channel length refers to, for example, a region in which a semiconductor (or a portion of the semiconductor in which current flows when the transistor is on) overlaps with a gate in a top view of a transistor, or a channel is formed.
  • the channel width refers to, for example, a region where a semiconductor (or a portion of the semiconductor where current flows when the transistor is on) overlaps with a gate electrode, or a region where a channel is formed. is the length of the part where the drain and the drain face each other.
  • a and B are connected includes not only direct connection between A and B, but also electrical connection.
  • a and B are electrically connected means that when there is an object having some kind of electrical action between A and B, an electric signal can be exchanged between A and B. What to say.
  • Example 2 In this example, a light-emitting device that can be used for the display device of one embodiment of the present invention will be described with reference to FIGS.
  • FIG. 23A and 23B are diagrams illustrating the configuration of light emitting device 550.
  • FIG. 23A and 23B are diagrams illustrating the configuration of light emitting device 550.
  • FIG. 24 is a diagram illustrating the current density-luminance characteristics of the light-emitting device 1.
  • FIG. 25 is a diagram for explaining luminance-current efficiency characteristics of the light-emitting device 1.
  • FIG. 26 is a diagram illustrating voltage-luminance characteristics of the light-emitting device 1.
  • FIG. 27 is a diagram illustrating the voltage-current characteristics of the light emitting device 1.
  • FIG. 28 is a diagram for explaining an emission spectrum when the light-emitting device 1 emits light with a luminance of 1000 cd/m 2 .
  • FIG. 29 is a diagram illustrating the current density-luminance characteristics of the light-emitting device 2.
  • FIG. 30 is a diagram for explaining luminance-current efficiency characteristics of the light-emitting device 2.
  • FIG. 31 is a diagram illustrating voltage-luminance characteristics of the light-emitting device 2.
  • FIG. 32 is a diagram illustrating the voltage-current characteristics of the light emitting device 2.
  • FIG. 33 is a diagram for explaining an emission spectrum when the light emitting device 2 emits light with a luminance of 1000 cd/m 2 .
  • FIG. 34 is a diagram illustrating the current density-luminance characteristics of light-emitting device 3 and light-emitting device 4.
  • FIG. 34 is a diagram illustrating the current density-luminance characteristics of light-emitting device 3 and light-emitting device 4.
  • FIG. 35 is a diagram illustrating luminance-current efficiency characteristics of light-emitting device 3 and light-emitting device 4.
  • FIG. 36 is a diagram illustrating the voltage-luminance characteristics of light-emitting device 3 and light-emitting device 4.
  • FIG. 36 is a diagram illustrating the voltage-luminance characteristics of light-emitting device 3 and light-emitting device 4.
  • FIG. 37 is a diagram illustrating voltage-current characteristics of light-emitting device 3 and light-emitting device 4.
  • FIG. 37 is a diagram illustrating voltage-current characteristics of light-emitting device 3 and light-emitting device 4.
  • FIG. 38 is a diagram illustrating the luminance-blue index characteristics of Light-Emitting Device 3 and Light-Emitting Device 4.
  • FIG. 38 is a diagram illustrating the luminance-blue index characteristics of Light-Emitting Device 3 and Light-Emitting Device 4.
  • FIG. 39 is a diagram for explaining emission spectra when the light-emitting device 3 and the light-emitting device 4 emit light at a luminance of 1000 cd/m 2 .
  • 40A to 40D are diagrams illustrating the configuration of the light emitting device 550.
  • FIG. 40A to 40D are diagrams illustrating the configuration of the light emitting device 550.
  • FIG. 41 is a diagram for explaining the current density-luminance characteristics of the light emitting device 5.
  • FIG. 42 is a diagram illustrating luminance-current efficiency characteristics of the light-emitting device 5.
  • FIG. 43 is a diagram illustrating voltage-luminance characteristics of the light-emitting device 5.
  • FIG. 44 is a diagram illustrating voltage-current characteristics of the light-emitting device 5.
  • FIG. 45 is a diagram for explaining an emission spectrum when the light emitting device 5 emits light with a luminance of 1000 cd/m 2 .
  • FIG. 46 is a diagram for explaining temporal changes in normalized luminance of the light-emitting device 5 when light is emitted at a constant current density (50 mA/cm 2 ).
  • the manufactured light-emitting device 1 described in this example can be used for the display device of one embodiment of the present invention.
  • the light emitting device 1 has a configuration similar to that of the light emitting device 550 (see FIG. 23A).
  • Table 1 shows the configuration of the light-emitting device 1. Structural formulas of materials used for the light-emitting device described in this example are shown below. In addition, in the tables of the present embodiment, subscripts and superscripts are shown in standard sizes for convenience. For example, subscripts used for abbreviations and superscripts used for units are shown in standard sizes in the tables. These descriptions in the table can be read in consideration of the description in the specification. In addition, in the light-emitting device 1, the reflective film REFG(2) has a distance DG of 112 nm from the electrode 552G.
  • a conductive film REFG(1) was formed. Specifically, it was formed by a sputtering method using titanium (Ti) as a target.
  • the conductive film REFG(1) contains Ti and has a thickness of 50 nm.
  • a reflective film REFG(2) was formed on the conductive film REFG(1). Specifically, it was formed by a sputtering method using aluminum (Al) as a target.
  • the reflective film REFG(2) contains Al and has a thickness of 70 nm.
  • a conductive film REFG(3) was formed on the reflective film REFG(2). Specifically, it was formed by a sputtering method using Ti as a target.
  • the conductive film REFG(3) contains Ti and has a thickness of 6 nm.
  • electrode 551G was formed. Specifically, it was formed by a sputtering method using indium oxide-tin oxide (abbreviation: ITSO) containing silicon or silicon oxide as a target.
  • ITSO indium oxide-tin oxide
  • the electrode 551G includes ITSO and has a thickness of 10 nm and an area of 4 mm 2 (2 mm ⁇ 2 mm).
  • the substrate on which the electrode 551G was formed was washed with water, baked at 200° C. for 1 hour, and then subjected to UV ozone treatment for 370 seconds. After that, the substrate was introduced into a vacuum deposition apparatus whose inside was evacuated to about 10 ⁇ 4 Pa, and subjected to vacuum baking at 170° C. for 30 minutes in a heating chamber in the vacuum deposition apparatus. After that, the substrate was allowed to cool for about 30 minutes.
  • layer 104 was formed over electrode 551G. Specifically, the materials were co-evaporated using a resistance heating method.
  • the electron-accepting material OCHD-003 contains fluorine and has a molecular weight of 672.
  • layer 112 comprises PCBBiF and has a thickness of 10 nm.
  • a seventh step layer 111G was formed over layer 112 . Specifically, the materials were co-evaporated using a resistance heating method.
  • layer 113(1) was formed over layer 111G. Specifically, the materials were deposited using a resistance heating method.
  • layer 113(1) comprises 2-[3-(3′-dibenzothiophen-4-yl)biphenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II) and has a thickness of 15 nm. .
  • layer 113(2) was formed on layer 113(1). Specifically, the materials were deposited using a resistance heating method.
  • layer 113(2) contains 2,9-di(2-naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) and has a thickness of 15 nm.
  • the layer 105 contains lithium fluoride (abbreviation: LiF) and has a thickness of 1 nm.
  • LiF lithium fluoride
  • an electrode 552G was formed on layer 105; Specifically, the materials were co-evaporated using a resistance heating method.
  • a conductive film 552 was formed over the electrode 552G. Specifically, it was formed by a sputtering method using indium oxide-tin oxide (abbreviation: ITO) as a target.
  • ITO indium oxide-tin oxide
  • the conductive film 552 contains ITO and has a thickness of 70 nm.
  • Table 2 shows the results of main initial characteristics when the manufactured light-emitting device emits light at a luminance of about 1000 cd/m 2 .
  • the distances in the table are the distance from the reflective film REFG(2) to the electrode 552G, the distance from the reflective film REFR(2) to the electrode 552R, or the distance from the reflective film REFB(2) to the electrode 552B. Also shown are the properties of other light emitting devices and comparative devices described below.
  • the blue index (BI) is one of the indices representing the characteristics of blue light emitting devices, and is a value obtained by dividing current efficiency (cd/A) by y chromaticity.
  • blue light with high color purity is useful for expressing a wide color gamut.
  • blue light with higher color purity tends to have smaller y chromaticity.
  • the value obtained by dividing the current efficiency (cd/A) by the y chromaticity is an index showing the usefulness of the blue light emitting device.
  • a blue light-emitting device with a high BI is suitable for realizing a display device with a wide color gamut and high efficiency.
  • Light-emitting device 1 was found to exhibit good properties. For example, light-emitting device 1 can be driven at a lower voltage than comparative device 1 . In addition, high luminance can be obtained with less power than the comparative device 1. Light-emitting device 1 also uses less material than comparative device 1 . Moreover, the time required for manufacturing can be shortened.
  • the fabricated comparative device 1 described in this reference example has a thickness of 137.5 nm for layer 112 instead of 10 nm, and a thickness of 50 nm for layer 111G instead of 40 nm.
  • the electrode 552G has a thickness of 15 nm instead of a thickness of 25 nm.
  • the reflective film REFG(2) has a distance DG of 250.3 nm from the electrode 552G.
  • Light emitting device 2 The manufactured light-emitting device 2 described in this example can be used for the display device of one embodiment of the present invention.
  • Table 3 shows the configuration of the light-emitting device 2. Structural formulas of materials used for the light-emitting device described in this example are shown below.
  • the reflective film REFR(2) has a distance DR of 137 nm from the electrode 552R.
  • the configuration of the light-emitting device 2 includes an electrode 551R instead of the electrode 551G, a layer 112 with a thickness of 30 nm instead of a thickness of 10 nm, a layer 111R instead of the layer 111G, and a layer 113 ( 2) differs from the light-emitting device 1 in that it has a thickness of 20 nm instead of the thickness of 15 nm and an electrode 552R instead of the electrode 552G.
  • the sixth step of forming the layer 112 the seventh step of forming the layer 111R, and the ninth step of forming the layer 113(2) are the manufacturing method of the light-emitting device 1.
  • the different parts are described in detail, and the above description is used for the parts using the same method.
  • layer 112 comprises PCBBiF and has a thickness of 30 nm.
  • a seventh step layer 111R was formed over layer 112 . Specifically, the materials were co-evaporated using a resistance heating method.
  • 9mDBtBPNfpr 9mDBtBPNfpr
  • PCBBiF phosphorescent dopant
  • layer 113(2) was formed on layer 113(1). Specifically, the materials were deposited using a resistance heating method.
  • layer 113(2) comprises NBPhen and has a thickness of 20 nm.
  • Table 2 shows the results of main initial characteristics when the manufactured light-emitting device emits light at a luminance of about 1000 cd/m 2 .
  • Light-emitting device 2 was found to exhibit good properties. For example, light emitting device 2 can be driven at a lower voltage than comparative device 2 . In addition, high luminance can be obtained with less power than the comparative device 2. Light emitting device 2 also uses less material than comparative device 2 . Moreover, the time required for manufacturing can be shortened.
  • Light Emitting Device 1 has a distance DG of 112 nm between the reflective film REFG(2) and the electrode 552G. Also, the light emitting device 2 has a distance DR of 137 nm between the reflective film REFR(2) and the electrode 552R.
  • the distance DR of 137 nm is 25 nm longer than the distance DG of 112 nm.
  • the display device having the light-emitting device 1 and the light-emitting device 2 has a smaller level difference than the display device having the comparative device 1 and the comparative device 2 .
  • Comparative Device 1 comprises a distance DG of 250.3 nm between the reflective film REFG(2) and the electrode 552G. Also, Comparative Device 2 has a distance DR of 300.3 nm between the reflective film REFR(2) and the electrode 552R.
  • the distance DR of 300.3 nm is 50 nm longer than the distance DG of 250.3 nm.
  • the manufactured light-emitting device 3 described in this example can be used for the display device of one embodiment of the present invention.
  • the light emitting device 3 has a configuration similar to that of the light emitting device 550 (see FIG. 23B).
  • Table 4 shows the configuration of the light-emitting device 3. Structural formulas of materials used for the light-emitting device described in this example are shown below.
  • the reflective film REFB(2) has a distance DB of 193.8 nm from the electrode 552B.
  • the configuration of the light-emitting device 3 includes an electrode 551B instead of the electrode 551G, a layer 112(1) and a layer 112(2) instead of the layer 112, a layer 111B instead of the layer 111G,
  • the light-emitting device 1 is different from the light-emitting device 1 in that the layer 105 contains LiF and Yb at a weight ratio of 1:1 instead of LiF and has a thickness of 1.8 nm, and an electrode 552B instead of the electrode 552G. is different.
  • the conductive film REFB(1) has the same configuration as the conductive film REFG(1)
  • the conductive film REFB(3) has the same configuration as the conductive film REFG(3).
  • the method for manufacturing the light-emitting device 3 includes a sixth step of forming a layer 112(1) instead of the layer 112, a 6-2 step of forming a layer 112(2) on the layer 112(1),
  • the seventh step of forming layer 111B and the tenth step of forming layer 105 are different from the fabrication method of light emitting device 1 .
  • the different parts are described in detail, and the above description is used for the parts using the same method.
  • layer 112(1) was formed over layer 104; Specifically, the material was deposited using a resistance heating method.
  • layer 112(1) comprises PCBBiF and has a thickness of 96 nm.
  • step 6-2 layer 112(2) was formed on layer 112(1). Specifically, the materials were deposited using a resistance heating method.
  • layer 112(2) comprises N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP) and has a thickness of 10 nm.
  • layer 111B was formed over layer 112(2). Specifically, the materials were co-evaporated using a resistance heating method.
  • Table 2 shows the results of main initial characteristics when the manufactured light-emitting device emits light at a luminance of about 1000 cd/m 2 .
  • Light-emitting device 3 was found to exhibit good properties. For example, the light emitting device 3 emitted light exhibiting a deep blue chromaticity. In addition, since it exhibits a high blue index, it can be said that the device is suitable for a display device.
  • light-emitting device 1 comprises a distance DG of 112 nm between reflective film REFG(2) and electrode 552G. Also, light-emitting device 2 has a distance DR of 137 nm between reflective film REFR(2) and electrode 552R, and light-emitting device 3 has a distance DR of 193.8 nm between reflective film REFB(2) and electrode 552B. distance DB.
  • the distance DB of 193.8 nm is 81.8 nm longer than the distance DG of 112 nm.
  • the distance DB of 193.8 nm is 56.8 nm longer than the distance DR of 137 nm.
  • the distance DR of 137 nm is 25 nm longer than the distance DG of 112 nm.
  • the display device having the light-emitting device 1, the light-emitting device 2, and the light-emitting device 3 has a smaller level difference than the display device having the comparative device 1, the comparative device 2, and the light-emitting device 3.
  • the manufactured light-emitting device 3 described in this example can be used for the display device of one embodiment of the present invention.
  • the light emitting device 4 has a configuration similar to that of the light emitting device 550 (see FIG. 23B).
  • Table 5 shows the configuration of the light-emitting device 4.
  • the reflective film REFB(2) has a distance DB of 82 nm from the electrode 552B.
  • the configuration of light-emitting device 4 includes electrode 551B instead of electrode 551G; layer 104 has a thickness of 5 nm instead of 10 nm; (2), layer 111B instead of layer 111G, layer 113(2) with a thickness of 10 nm instead of 15 nm, and electrode 552B instead of electrode 552G. , is different from the light emitting device 1 .
  • the method for manufacturing the light-emitting device 4 includes a fifth step of forming the layer 104, a sixth step of forming the layer 112(1) instead of the layer 112, and a layer 112(2) on the layer 112(1). a seventh step of forming layer 111B; an eighth step of forming layer 113(1); a ninth step of forming layer 113(2); It is different from the production method of Here, the different parts are described in detail, and the above description is used for the parts using the same method.
  • layer 104 was formed over electrode 551B. Specifically, the materials were co-evaporated using a resistance heating method.
  • layer 112(1) was formed over layer 104; Specifically, the materials were deposited using a resistance heating method.
  • layer 112(1) comprises PCBBiF and has a thickness of 5 nm.
  • step 6-2 layer 112(2) was formed on layer 112(1). Specifically, the materials were deposited using a resistance heating method.
  • layer 112(2) comprises DBfBB1TP and has a thickness of 5 nm.
  • layer 111B was formed over layer 112(2). Specifically, the materials were co-evaporated using a resistance heating method.
  • layer 113(1) was formed over layer 111G. Specifically, the materials were deposited using a resistance heating method.
  • layer 113(1) comprises 2mDBTBPDBq-II and has a thickness of 15 nm.
  • layer 113(2) was formed on layer 113(1). Specifically, the material was deposited using a resistance heating method.
  • layer 113(2) comprises NBPhen and has a thickness of 10 nm.
  • Table 2 shows the results of main initial characteristics when the manufactured light-emitting device emits light at a luminance of about 1000 cd/m 2 .
  • Light-emitting device 4 was found to exhibit good properties. For example, the light emitting device 4 can be driven at a low voltage. It also showed high current efficiency. In addition, high luminance can be obtained with low power. Also, the light-emitting device 4 uses less material than the light-emitting device 3 . Moreover, the time required for manufacturing can be shortened.
  • light-emitting device 1 comprises a distance DG of 112 nm between reflective film REFG(2) and electrode 552G. Also, light-emitting device 2 has a distance DR of 137 nm between the reflective film REFR(2) and the electrode 552R, and light-emitting device 4 has a distance of 82 nm between the reflective film REFB(2) and the electrode 552B. Equipped with DB.
  • the distance DR of 137 nm is 55 nm longer than the distance DB of 82 nm.
  • the distance DR of 137 nm is 25 nm longer than the distance DG of 112 nm.
  • the distance DG of 112 nm is 30 nm longer than the distance DB of 82 nm.
  • the display device having light-emitting device 1, light-emitting device 2, and light-emitting device 4 has a smaller level difference than the display device having comparative device 1, comparative device 2, and light-emitting device 3.
  • FIG. 1 The display device having light-emitting device 1, light-emitting device 2, and light-emitting device 4 has a smaller level difference than the display device having comparative device 1, comparative device 2, and light-emitting device 3.
  • the manufactured light emitting device 5 described in this example has the same configuration as the light emitting device 550 (see FIGS. 23A and 40A to 40C).
  • Table 6 shows the configuration of the light-emitting device 5. Note that, in the light-emitting device 5 manufactured to be described in this example, the layer 111G is 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofluoro in place of 8BP-4mDBtPBfpm and PCCP.
  • the area of the electrode 551G of the light emitting device 5 is smaller than the area of the electrode 551G of the light emitting device 1, and has an area of 7.32 ⁇ m 2 (6.42 ⁇ m ⁇ 1.14 ⁇ m).
  • the unit 103G of the light emitting device 5 is separated from other adjacent light emitting devices (see FIG. 40C).
  • the light emitting device 5 includes a filler 529(1) and a filler 529(2) between other adjacent light emitting devices.
  • a reflective film REFG(1) was formed. Specifically, it was formed by a sputtering method using titanium (Ti) as a target.
  • the reflective film REFG(1) contains Ti and has a thickness of 50 nm.
  • a reflective film REFG(2) was formed on the reflective film REFG(1). Specifically, it was formed by a sputtering method using aluminum (Al) as a target.
  • the reflective film REFG(2) contains Al and has a thickness of 70 nm.
  • a reflective film REFG(3) was formed on the reflective film REFG(2). Specifically, it was formed by a sputtering method using Ti as a target.
  • the reflective film REFG(3) contains Ti and has a thickness of 6 nm.
  • the substrate was heated at 300° C. for 1 hour in the atmosphere to oxidize the Ti of the reflective film REFG(3). This improves the translucency of the reflective film REFG(3), and the light transmitted through the reflective film REFG(3) is reflected by the reflective film REFG(2).
  • an electrode 551G was formed on the reflective film REFG(3). Specifically, it was formed by a sputtering method using indium oxide-tin oxide (abbreviation: ITSO) containing silicon or silicon oxide as a target.
  • ITSO indium oxide-tin oxide
  • Electrode 551G comprises ITSO and has a thickness of 10 nm and an area of 7.32 ⁇ m 2 (6.42 ⁇ m ⁇ 1.14 ⁇ m).
  • a plurality of electrodes 551G are arranged in an area of 4 mm 2 (2 mm ⁇ 2 mm) (see FIGS. 40A and 40B), and the center-to-center distance (pitch) is 7.92 ⁇ m.
  • the pixels 703 are regularly arranged in an area of 4 mm 2 with a pixel density of 3207 ppi.
  • the substrate on which the electrode 551G was formed was washed with water, baked at 200° C. for 1 hour, and then subjected to UV ozone treatment for 370 seconds. After that, the substrate was introduced into a vacuum deposition apparatus whose inside was evacuated to about 10 ⁇ 4 Pa, and subjected to vacuum baking at 170° C. for 30 minutes in a heating chamber in the vacuum deposition apparatus. After that, the substrate was allowed to cool for about 30 minutes.
  • layer 104 was formed over electrode 551G. Specifically, the materials were co-evaporated using a resistance heating method.
  • layer 112 comprises PCBBiF and has a thickness of 10 nm.
  • a seventh step layer 111G was formed over layer 112 . Specifically, the materials were co-evaporated using a resistance heating method.
  • 4,8mDBtP2Bfpm 9-(2-naphthyl )-9′-phenyl-9H,9′H-3,3′-bicarbazole
  • ⁇ NCCP 9-(2-naphthyl )-9′-phenyl
  • layer 113(1) was formed over layer 111G. Specifically, the materials were deposited using a resistance heating method.
  • Layer 113(1) is 2- ⁇ 3-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl ⁇ dibenzo[f,h]quinoxaline (abbreviation: 2mPCCzPDBq) with a thickness of 20 nm.
  • layer 113(2) was formed on layer 113(1). Specifically, the materials were deposited using a resistance heating method.
  • layer 113(2) comprises NBPhen and has a thickness of 15 nm.
  • a sacrificial layer (1) was formed on layer 113(2). Specifically, the substrate on which layers 112(2) and 112(2) were formed was taken out from the vacuum deposition apparatus, introduced into an ALD film forming apparatus, and the material was formed into a film using the ALD method.
  • the sacrificial layer (1) contains aluminum oxide and has a thickness of 30 nm.
  • step 10-2 sacrificial layer (2) was formed on sacrificial layer (1). Specifically, the substrate on which the sacrificial layer (1) was formed was taken out from the ALD film forming apparatus, introduced into the sputtering apparatus, and the material was formed into a film using the sputtering method.
  • the sacrificial layer (2) contains tungsten and has a thickness of 50 nm.
  • the sacrificial layer (1) and the sacrificial layer (2) were processed into a predetermined shape. Specifically, after the substrate on which the sacrificial layer (2) was formed was removed from the sputtering apparatus, a resist was formed on the sacrificial layer (2) so as to overlap with the electrode 551G, and etching was performed using a photolithography method. .
  • Step 11-2 the unit 103G and layer 104 were processed into a predetermined shape. Specifically, using the sacrificial layer (1) and the sacrificial layer (2) as a resist, etching processing was performed on unnecessary portions while leaving portions overlapping with the electrodes 551G.
  • step 11-3 the sacrificial layer (2) was removed. Specifically, the sacrificial layer (2) was etched using a dry etching method.
  • an insulating film which later becomes the filler 529(1), is formed. Specifically, an insulating film was formed using the ALD method so as to cover the upper surface of the sacrificial layer (1) and the side surfaces of the unit 103G and the layer 104. As shown in FIG. Note that the insulating film contains aluminum oxide and has a thickness of 10 nm.
  • filler 529(2) was formed into a predetermined shape. Specifically, a photosensitive resin was used. Further, an opening was formed by removing a portion overlapping with the electrode 551G while leaving a space between the other electrode adjacent to the electrode 551G and the electrode 551G.
  • the insulating film formed in the twelfth step was processed into a predetermined shape to form a filler 529(1).
  • the filling material 529(2) is used as a resist to leave a space between another electrode adjacent to the electrode 551G and the electrode 551G and remove a portion overlapping with the electrode 551G to form an opening in the insulating film. formed.
  • the sacrificial layer (1) overlying the electrode 551G was removed using a wet etching method. This exposes layer 113(2) in the opening.
  • the substrate was introduced into a vacuum deposition apparatus whose inside was evacuated to about 10 ⁇ 4 Pa, and subjected to vacuum baking at 70° C. for 90 minutes in a heating chamber in the vacuum deposition apparatus. Then, the substrate was allowed to cool for about 30 minutes.
  • layer 105 was formed over layer 113(2). Specifically, the materials were co-evaporated using a resistance heating method.
  • an electrode 552G was formed on layer 105; Specifically, the materials were co-evaporated using a resistance heating method.
  • a conductive film 552 was formed over the electrode 552G. Specifically, it was formed by a sputtering method using indium oxide-tin oxide (abbreviation: ITO) as a target.
  • ITO indium oxide-tin oxide
  • the conductive film 552 contains ITO and has a thickness of 70 nm.
  • Table 7 shows main initial characteristics when the fabricated light-emitting device emits light at a luminance of about 1000 cd/m 2 .
  • Table 8 shows LT90, which is the elapsed time until the luminance drops to 90% of the initial luminance when the light-emitting device 5 emits light at a constant current density (50 mA/cm 2 ). Also listed in Tables 7 and 8 are the characteristics of Comparative Device 3, whose configuration is described below.
  • a light-emitting device with an extremely small area could be realized.
  • the area of the light emitting device 5 was 7.32 ⁇ m 2 (6.42 ⁇ m ⁇ 1.14 ⁇ m).
  • a plurality of light emitting devices could be arranged with a center-to-center distance (pitch) of 7.92 ⁇ m. In other words, it could be arranged with a pixel density of 3207 ppi.
  • Pitch center-to-center distance
  • light-emitting device 5 exhibited higher current efficiency compared to comparative device 3, which was fabricated without processing unit 103G and layer 103.
  • FIG. Also, a luminance of about 1000 cd/m 2 was obtained at a low voltage.
  • LT90 was long, and the light-emitting device 5 exhibited good reliability. Also, the layer 104 of the device 5 is isolated from the adjacent light emitting device to prevent current from flowing through the layer 104 to the adjacent light emitting device. Further, since the light-emitting device 5 is one embodiment of the present invention and can have a small step, the unit 103G and the layer 104 can be easily processed, and the display device can be manufactured easily.
  • the manufactured comparative device 3 described in this reference example has the same configuration as the light emitting device 550 (see FIG. 40D).
  • the method for manufacturing Comparative Device 3 differs from the method for manufacturing Light-Emitting Device 5 in that, in the step of forming electrode 551G, partition 528 is formed and filler 529(1) and filler 529(2) are not used. . In other words, the 10th to 13-2 steps were not applied, and the method of proceeding to the 14th step after completing the 9th step was applied.
  • ANO conductive film, C21: capacitance, C22: capacitance, G1: conductive film, G2: conductive film, GD: drive circuit, GL: gate line, GL1: gate line, GL2: gate line, M21: transistor, N21: node , N22: node, REFR: reflective film, REFG: reflective film, REFG(1): conductive film, REFG(3): conductive film, REFB: reflective film, S1g: conductive film, S2g: conductive film, SD: drive circuit , SW21: switch, SW22: switch, SW23: switch, V0: wiring, VCOM: conductive film, VCOM2: conductive film, 10: display device, 10A: display device, 20: layer, 30: layer, 40: drive circuit, 41: gate driver, 42: source driver, 50: functional circuit, 51: CPU, 52: accelerator, 53: CPU core, 60: display unit, 61: pixel, 61D: pixel, 61N: pixel, 62: pixel circuit,

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GB2637368A (en) * 2024-01-16 2025-07-23 Lg Display Co Ltd Display apparatus and display panel

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JP2014038782A (ja) * 2012-08-18 2014-02-27 Seiko Epson Corp 電気光学装置、及び電子機器
JP2015062194A (ja) * 2014-11-25 2015-04-02 ユー・ディー・シー アイルランド リミテッド カラー表示装置及びその製造方法
JP2016085968A (ja) * 2014-10-24 2016-05-19 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、及び照明装置
JP2017072812A (ja) * 2015-10-09 2017-04-13 株式会社ジャパンディスプレイ 表示装置
WO2018181049A1 (ja) * 2017-03-30 2018-10-04 株式会社クオルテック Ｅｌ表示パネルの製造方法、ｅｌ表示パネルの製造装置、ｅｌ表示パネル、およびｅｌ表示装置

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JP2014038782A (ja) * 2012-08-18 2014-02-27 Seiko Epson Corp 電気光学装置、及び電子機器
JP2016085968A (ja) * 2014-10-24 2016-05-19 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、及び照明装置
JP2015062194A (ja) * 2014-11-25 2015-04-02 ユー・ディー・シー アイルランド リミテッド カラー表示装置及びその製造方法
JP2017072812A (ja) * 2015-10-09 2017-04-13 株式会社ジャパンディスプレイ 表示装置
WO2018181049A1 (ja) * 2017-03-30 2018-10-04 株式会社クオルテック Ｅｌ表示パネルの製造方法、ｅｌ表示パネルの製造装置、ｅｌ表示パネル、およびｅｌ表示装置

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Publication number Priority date Publication date Assignee Title
GB2637368A (en) * 2024-01-16 2025-07-23 Lg Display Co Ltd Display apparatus and display panel

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