WO2022223077A1 - Cellule solaire tandem monolithique - Google Patents

Cellule solaire tandem monolithique Download PDF

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Publication number
WO2022223077A1
WO2022223077A1 PCT/DE2022/100305 DE2022100305W WO2022223077A1 WO 2022223077 A1 WO2022223077 A1 WO 2022223077A1 DE 2022100305 W DE2022100305 W DE 2022100305W WO 2022223077 A1 WO2022223077 A1 WO 2022223077A1
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WO
WIPO (PCT)
Prior art keywords
solar cell
tandem solar
cell
sub
silicon
Prior art date
Application number
PCT/DE2022/100305
Other languages
German (de)
English (en)
Inventor
Jörg Müller
Ralf NIEMANN
Enrico Jarzembowski
Fabian Fertig
Original Assignee
Hanwha Q Cells Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by Hanwha Q Cells Gmbh filed Critical Hanwha Q Cells Gmbh
Publication of WO2022223077A1 publication Critical patent/WO2022223077A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells

Definitions

  • the invention relates to a monolithic tandem solar cell.
  • the invention relates to a monolithic tandem solar cell having an upper perovskite sub-cell and a lower monocrystalline silicon sub-cell, also referred to as a perovskite-on-silicon tandem solar cell.
  • a tandem solar cell also known as a multiple solar cell, has at least two solar cells made of different materials that are stacked on top of each other.
  • a distinction is made between mechanically stacked solar cells, in which the materials are separated from one another, and monolithic solar cells, in which all solar cells are built on the same substrate.
  • tandem solar cells that consist of several sub-cells, such as the perovskite-on-silicon tandem solar cells, have so-called heterojunction silicon sub-cells with an n-type silicon absorber that is purely phosphorus-doped.
  • Silicon heterojunction solar cells although widely used in science, have a significantly lower market share in commercial products than tandem solar cells with a silicon-based p-type bottom cell absorber and a perovskite-based top cell absorber.
  • tandem solar cells which have a p-type silicon absorber, a diffusion length in the silicon absorber is crucial for optimized solar cell performance.
  • PERC (passivated emitter rear contact)-based silicon solar cells with a boron-doped silicon substrate are known.
  • a boron-oxygen defect that occurs can lead to a significant deterioration in the diffusion length in the silicon absorber.
  • regeneration processes by eg excess charge carrier generation/injection at temperatures in the range of 100 to 350°C can be applied.
  • this regeneration can be destabilized or even exacerbated even when the boron-oxygen defect has been regenerated.
  • the invention relates to a monolithic tandem solar cell, having an upper perovskite sub-cell and a lower gallium-doped p-type monocrystalline silicon sub-cell.
  • the classification of the solar cell as monolithic means in particular that it is produced in a monolithic construction in which the layers, in particular all layers, are applied or applied one after the other to a substrate or a superstrate and to one another.
  • This solar cell has an improved diffusion length and therefore optimized performance. It also does not have the boron-oxygen defect and therefore does not need to be regenerated to maintain its performance.
  • This invention describes the use of a silicon absorber with a dopant other than boron to enable the use of bottom silicon sub-cells in tandem solar cells without degrading the diffusion length within the silicon sub-cell absorber.
  • gallium is suitable. Contrary to previous assumptions, this enables, for example, the use of adapted PERC-based sub-cells in high-efficiency tandem solar cells by maintaining a high diffusion length within the silicon absorber.
  • this invention enables the use of a higher temperature budget than in the case of tandem solar cells based on a silicon heterojunction Include sub-cell, which can usually only withstand temperatures below about 200 ° C. By applying this invention, a significant increase in the diffusion length within the silicon absorber of a silicon-based sub-cell in a tandem solar cell photovoltaic system is achieved compared to the use of boron-doped silicon substrates.
  • the tandem solar cell During operation, light first enters the tandem solar cell through the upper sub-cell, also called the top cell, and then through the lower sub-cell, also called the bottom cell. Further sub-cells can be arranged between the upper and the lower sub-cell. The light not used by the upper sub-cell can be processed by the sub-cell(s) below it. Silicon-based sub-cells essentially convert infrared light into electrical energy, while perovskite-based sub-cells can essentially use visible portions of sunlight. If both materials are used in combination, more energy can be converted in the same area. As a result, more power is achieved compared to a simple solar cell.
  • the lower gallium-doped p-type monocrystalline silicon partial cell can have gallium doping over the entire surface. However, the gallium doping can also only be present over part of the area.
  • the tandem solar cell is designed as a 2-terminal tandem solar cell.
  • the upper perovskite sub-cell and the lower silicon sub-cell are preferably connected in series.
  • the tandem solar cell is preferably designed as a 3-terminal tandem solar cell. While 2-terminal tandem solar cell means that the tandem solar cell has two electrical connections, a 3-terminal tandem solar cell has three electrical connections. Further alternatively, the tandem solar cell is preferably designed as a 4-terminal tandem solar cell. The greater the number of terminals or electrical connections of the tandem solar cell, the greater the performance that the tandem solar cell achieves, but the more expensive the tandem solar cell is in their manufacture.
  • the tandem sub-cells are preferably electrically isolated from one another and connected in parallel.
  • the 4-terminal solar cells are more expensive because of the additional electrodes and installation costs. Nevertheless, on a yearly basis, it may be the more cost-effective option for a user to use a 4-terminal tandem solar cell, especially when operating outdoors with changing light intensities and spectra.
  • the lower gallium-doped p-type monocrystalline silicon partial cell is in the form of an IBC (interdigitated back contact) solar cell.
  • the IBC solar cell is a solar cell specially optimized for the purpose of concentrating sunlight.
  • a solar cell usually has a front and a back side, with the front side facing the sun during operation, while the back side is turned away from the sun.
  • the IBC solar cell does not have front contacts. Rather, separate p- and n-emitter regions and contacts are provided on the rear side of the solar cell that faces away from the sun. By doing without the partial contact shading on the front, a power gain can be achieved. This further increases the performance of the tandem solar cell.
  • the lower gallium-doped p-type monocrystalline silicon partial cell is preferably designed as a PERC (passivated emitter and rear contact) solar cell.
  • PERC passive emitter and rear contact
  • FIG. 1 shows a cross-sectional view of a tandem solar cell according to a first embodiment
  • FIG. 2 shows a cross-sectional view of a tandem solar cell according to a second embodiment
  • FIG. 3 shows a cross-sectional view of a tandem solar cell according to a third embodiment
  • FIG. 4 shows a cross-sectional view of a tandem solar cell according to a fourth embodiment.
  • the monolithic tandem solar cell has an upper perovskite sub-cell 5 and a lower gallium-doped p-type monocrystalline silicon sub-cell 2 .
  • a rear side electrode 1 is arranged on one side of the lower silicon sub-cell 2, while a Lambertian scatterer 3 and a reflection layer 4 are arranged on an opposite side of the lower silicon sub-cell 2.
  • the upper perovskite cell part 5 is arranged on a side of the reflection layer 4 opposite the lower silicon cell part 2 .
  • an anti-reflection layer/a front-side contact 6 are arranged, which are shown as one layer. Light incident on the tandem solar cell is indicated by the arrows.
  • FIG. 2 shows a cross-sectional view of a tandem solar cell according to a second embodiment.
  • the tandem solar cell corresponds to the tandem solar cell shown in Fig. 1 with the difference that the Lambertian scatterer is not shown, that instead of an anti-reflection layer/front side contact, a reflective layer 4 and front side contacts 7 are shown and that the tandem solar cell is designed as a 2-terminal tandem solar cell is, which has two terminals or electrical connections 8.
  • 3 shows a cross-sectional view of a tandem solar cell according to a third embodiment.
  • a reflection layer 4 is arranged on a side of the silicon partial cell 2 opposite the p-type and n-type emitter regions 9, 10, on which an intermediate layer 11 is also arranged.
  • a further reflection layer 4 is arranged on a side of the intermediate layer 11 which is opposite from the reflection layer 4 , and an upper perovskite partial cell 5 is arranged on the side of the reflection layer 4 which is opposite to the intermediate layer 11 .
  • a reflection layer 4 and front-side contacts 7 are also arranged on a side of the upper perovskite partial cell 5 which is arranged opposite the p-type emitter region 9 .
  • the tandem solar cell is designed as a 3-terminal solar cell because it has three electrical connections 8 .
  • FIG. 4 shows a cross-sectional view of a tandem solar cell according to a fourth embodiment.
  • the tandem solar cell shown in FIG. 4 corresponds to the tandem solar cell shown in FIG. 2, with the difference that it is designed as a 4-terminal tandem solar cell, ie has four electrical connections 8, that it has an intermediate layer 11 between the upper perovskite cell part 5 and of the lower silicon partial cell 2, which each have front-side contacts 7 and rear-side electrodes 1, which are electrically connected by two of the total of four electrical connections 8.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une cellule solaire tandem monolithique comprenant une sous-cellule supérieure de pérovskite (5) et une sous-cellule inférieure de silicium monocristallin de type P dopée au gallium (2).
PCT/DE2022/100305 2021-04-22 2022-04-22 Cellule solaire tandem monolithique WO2022223077A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102021110303.7A DE102021110303A1 (de) 2021-04-22 2021-04-22 Monolithische Tandemsolarzelle
DE102021110303.7 2021-04-22

Publications (1)

Publication Number Publication Date
WO2022223077A1 true WO2022223077A1 (fr) 2022-10-27

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PCT/DE2022/100305 WO2022223077A1 (fr) 2021-04-22 2022-04-22 Cellule solaire tandem monolithique

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DE (1) DE102021110303A1 (fr)
WO (1) WO2022223077A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160163904A1 (en) * 2014-12-03 2016-06-09 The Board Of Trustees Of The Leland Stanford Junior University 2-terminal metal halide semiconductor/c-silicon multijunction solar cell with tunnel junction
US20180019358A1 (en) * 2016-07-13 2018-01-18 Lg Electronics Inc. Tandem solar cell, tandem solar cell module comprising the same, and method for manufacturing thereof
WO2020127030A1 (fr) * 2018-12-20 2020-06-25 Total Sa Unité de production d'énergie solaire en tandem à trois bornes
DE102019114498A1 (de) * 2019-05-29 2020-12-03 Hanwha Q Cells Gmbh Wafer-Solarzelle, Solarmodul und Verfahren zur Herstellung der Wafer-Solarzelle

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160163904A1 (en) * 2014-12-03 2016-06-09 The Board Of Trustees Of The Leland Stanford Junior University 2-terminal metal halide semiconductor/c-silicon multijunction solar cell with tunnel junction
US20180019358A1 (en) * 2016-07-13 2018-01-18 Lg Electronics Inc. Tandem solar cell, tandem solar cell module comprising the same, and method for manufacturing thereof
WO2020127030A1 (fr) * 2018-12-20 2020-06-25 Total Sa Unité de production d'énergie solaire en tandem à trois bornes
DE102019114498A1 (de) * 2019-05-29 2020-12-03 Hanwha Q Cells Gmbh Wafer-Solarzelle, Solarmodul und Verfahren zur Herstellung der Wafer-Solarzelle

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
KOPECEK RADOVAN ET AL: "Bifacial Photovoltaics 2021: Status, Opportunities and Challenges", ENERGIES, vol. 14, no. 8, 8 April 2021 (2021-04-08), pages 1 - 16, XP055898562, DOI: 10.3390/en14082076 *
PEIBST ROBBY ET AL: "From PERC to Tandem: POLO- and p+/n+ Poly-Si Tunneling Junction as Interface Between Bottom and Top Cell", IEEE JOURNAL OF PHOTOVOLTAICS, IEEE, vol. 9, no. 1, January 2019 (2019-01-01), pages 49 - 54, XP011694435, ISSN: 2156-3381, [retrieved on 20181221], DOI: 10.1109/JPHOTOV.2018.2876999 *
PREU RALF ET AL: "Passivated emitter and rear cell-Devices, technology, and modeling", APPLIED PHYSICS REVIEWS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 7, no. 4, 14 December 2020 (2020-12-14), XP012252213, DOI: 10.1063/5.0005090 *

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DE102021110303A1 (de) 2022-10-27

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