WO2022222148A1

WO2022222148A1 - Chip transfer method and apparatus, display backplane, and display

Info

Publication number: WO2022222148A1
Application number: PCT/CN2021/089409
Authority: WO
Inventors: 李强; 汪楷伦
Original assignee: 重庆康佳光电技术研究院有限公司
Priority date: 2021-04-23
Filing date: 2021-04-23
Publication date: 2022-10-27

Abstract

A chip transfer method and apparatus, a display backplane, and a display. In the chip transfer process, after a first pad (621) of a chip is abutted against a corresponding second pad (72) on a circuit substrate (71), the first pad (621) and the second pad (72) are bonded by applying high frequency mechanical vibration and pressure on the abutted first pad (621) and second pad (72).

Description

Chip transfer method, device, display backplane and display

technical field

The present invention relates to the technical field of chip transfer, and in particular, to a chip transfer method, a device, a display backplane and a display.

Background technique

Micro LED is sought after by various manufacturers due to its high brightness, wide color gamut coverage and high contrast ratio. It is called the next-generation display device, and its popularity has continued to rise in recent years; however, there are still many problems to be overcome in the actual production process. , such as chip yield improvement, massive transfer, and massive inspection and repair;

The mass transfer process requires the red, green and blue LED chips to be transferred and bonded to the display substrate of the display backplane in batches. The electrode pads of the LED chip are in contact with the metal pads on the display substrate that are heated to a molten state at a high temperature, and after the display substrate is cooled, the metal pads on it change from a molten state to a solidified state to complete the electrode pads and the Bonding of metal pads.

In the process of LED chip transfer, it needs to be completed through multiple batches. Therefore, during the LED chip transfer process, it is necessary to heat the entire surface of the display substrate at a high temperature to keep the metal pads on the display substrate in a melted state; while in the current batch of chips When transferring, due to the previously transferred Micro The electrode pads of the LED chip are only in contact with the metal pads in the melted state on the display substrate but are not fixed, that is, the bonding is not completed. Therefore, in the subsequent transfer process of the LED chips, the Micro LED chips that have been transferred earlier The electrode pads are easily separated from the metal pads on the circuit board, resulting in low yield; and after multiple batches of LED chips are transferred and heated at high temperature, it is easy to have a thermal impact on the display substrate, affecting the reliability and service life of the display substrate.

Therefore, how to improve the bonding yield during the chip transfer process and how to avoid high temperature heating of the display substrate is an urgent problem to be solved.

technical problem

In view of the above-mentioned deficiencies of the prior art, the purpose of the present application is to provide a chip transfer method, device, display backplane and display, aiming to solve the problems in the related art, such as the low yield rate of bonding during the chip transfer process and the need for the display substrate to be High temperature heating problem.

technical solutions

A chip transfer device, comprising:

A carrying table is configured to carry a circuit substrate, the circuit substrate is provided with a die bonding area, the die bonding area is provided with a second pad corresponding to the first pad on the chip, the circuit substrate When being carried on the carrying table, the second bonding pad is away from the side of the carrying table that is in contact with the circuit substrate;

a transfer head, configured to pick up a chip from the transfer substrate, and the first pad of the chip picked up by the transfer head is away from the side of the chip in contact with the transfer head;

a motion control platform, configured to drive the transfer head and/or the carrying platform to move, so as to connect the first pad of the chip picked up by the transfer head with the corresponding chip bonding area on the circuit substrate The second pads inside are butted, and a relative pressure is generated between the butted first pads and the second pads;

The vibration control platform is configured to generate high-frequency mechanical vibration, and the high-frequency mechanical vibration acts on the chip picked up by the transfer head and/or the circuit substrate carried by the carrying platform, so that the butted first pad and The second pad is bonded under the high frequency mechanical vibration and the pressure.

After the transfer head of the above-mentioned chip transfer device picks up the chip from the transfer substrate, it drives the transfer head and/or the carrier table of the chip transfer device to move through its motion control platform, so as to connect the first pad of the chip picked up by the transfer head to the carrier table. The corresponding second pads on the circuit substrate are butted together, and a relative pressure is generated between the butted first pads and the second pads; the vibration control platform of the chip transfer device produces a vibration control platform that acts on the chip and the chip picked up by the transfer head. / or under the high-frequency mechanical vibration of the circuit substrate carried by the carrier, so that the butted first pad and the second pad are bonded under the high-frequency mechanical vibration and pressure, so as to avoid the subsequent chip transfer process. The first pad of the transferred chip and the corresponding second pad on the circuit substrate are separated due to non-bonding, which improves the yield of bonding during the chip transfer process; and because it is no longer necessary to heat the circuit substrate at high temperature The second pad on it is melted, thereby avoiding various adverse effects caused by high temperature heating of the circuit substrate, improving its reliability and prolonging its service life.

Based on the same inventive concept, the present application also provides a chip transfer method, including:

The circuit substrate is arranged on the carrier table of the chip transfer device as described above;

Picking up chips from the transfer substrate by the transfer head;

Controlling the movement of the transfer head and/or the carrying table, so that the first pads of the chips picked up by the transfer head are butted with the second pads in the corresponding chip bonding area on the circuit substrate , and generate relative pressure between the butt-jointed first pad and second pad;

And control the vibration control platform to generate high-frequency mechanical vibration, and the high-frequency mechanical vibration acts on the chip picked up by the transfer head and/or the circuit substrate carried by the carrying platform, so that the butted first pad and The second pad is bonded under the high frequency mechanical vibration and the pressure.

The above chip transfer method, after the first pad of the chip picked up by the transfer head and the corresponding second pad on the circuit substrate are butted, the high-frequency mechanical vibration and The bonding is completed under pressure, that is, the first pads of the chips transferred in each batch can be bonded with the corresponding second pads on the circuit substrate during the transfer process of the batch, avoiding the transfer of subsequent batches of chips. During the process, because the first pad of the previously transferred chip and the corresponding second pad on the circuit substrate are separated due to unbonded bonding, the yield of bonding during the chip transfer process is improved; and in the chip transfer process It is no longer necessary to heat the circuit substrate at a high temperature, which can avoid various adverse effects caused by the high temperature heating of the circuit substrate, improve its reliability and prolong its service life.

Based on the same inventive concept, the present application also provides a display backplane, comprising a display substrate provided with a plurality of chip bonding areas, and micro LED chips disposed in the plurality of chip bonding areas, the micro LED chips Chips are transferred to the die bond pads by the chip transfer method described above. Therefore, the display backplane has higher yield, better reliability and longer service life.

Based on the same inventive concept, the present application also provides a display including a frame and the above-mentioned display backplane; the display backplane is fixed on the frame.

The above-mentioned display is equipped with the above-mentioned display backplane. Since the display backplane has a higher yield rate, better reliability and longer service life, the display provided by the present application is relatively more advanced than the display backplane in the related art. The resulting display has higher yield, better reliability, and longer service life. .

beneficial effect

After the transfer head of the chip transfer device picks up the chip from the transfer substrate, it drives the transfer head and/or the carrier table of the chip transfer device to move through its motion control platform, so as to connect the first pad of the chip picked up by the transfer head to the carrier table. The corresponding second pads on the circuit substrate are butted, and a relative pressure is generated between the butted first pads and the second pads; the vibration control platform of the chip transfer device generates a vibration control platform that acts on the chips picked up by the transfer head and/or Or under the high-frequency mechanical vibration of the circuit substrate carried by the bearing platform, the first pad and the second pad that are butted are bonded under the high-frequency mechanical vibration and pressure, so as to avoid the subsequent chip transfer process. The first pad of the chip and the corresponding second pad on the circuit substrate are separated due to unbonded bonding, which improves the bonding yield during the chip transfer process; and because it is no longer necessary to heat the circuit substrate at high temperature, the The second pad on it is melted, thereby avoiding various adverse effects caused by high temperature heating of the circuit substrate, improving its reliability and prolonging its service life.

Description of drawings

FIG. 1 is a schematic structural diagram 1 of a chip transfer apparatus provided by an embodiment of the present application;

FIG. 2 is a second structural schematic diagram of a chip transfer apparatus provided by an embodiment of the present application;

FIG. 3 is a third schematic structural diagram of a chip transfer apparatus provided by an embodiment of the present application;

FIG. 4 is a fourth schematic structural diagram of a chip transfer apparatus provided by an embodiment of the present application;

FIG. 5 is a fifth structural schematic diagram of a chip transfer apparatus provided by an embodiment of the present application;

FIG. 6 is a sixth schematic structural diagram of a chip transfer apparatus provided by an embodiment of the present application;

FIG. 7 is a seventh schematic structural diagram of a chip transfer apparatus provided by an embodiment of the present application;

FIG. 8 is a schematic flowchart 1 of a chip transfer method provided by an embodiment of the present application;

FIG. 9 is a schematic flowchart of a chip repairing process provided by an embodiment of the present application;

Fig. 10-1 is the Micro Micro on the growth substrate provided by the embodiment of the application LED chip schematic diagram;

FIG. 10-2 is a schematic diagram of lamination of a growth substrate and a transfer substrate according to an embodiment of the present application;

10-3 is a schematic diagram of peeling off a growth substrate provided by an embodiment of the present application;

10-4 is a schematic diagram of a growth substrate after peeling off according to an embodiment of the present application;

10-5 is a schematic diagram of a display substrate provided by an embodiment of the present application;

11-1 is a schematic diagram of the installation structure of the transfer head provided by the embodiment of the application;

11-2 is a schematic diagram of the installation structure of the first horn according to the embodiment of the application;

11-3 is a schematic structural diagram of an installation jig provided by an embodiment of the present application;

11-4 is a schematic structural diagram of an installation jig inserted into an expansion hole provided by an embodiment of the application;

11-5 is a schematic diagram of the expansion state of the installation jig provided by the embodiment of the application after being rotated in the expansion hole;

FIG. 12-1 is a schematic structural diagram of a carrier for carrying a transfer substrate according to an embodiment of the present application;

FIG. 12-2 is a schematic structural diagram of the bonding of the transfer head and the transfer substrate according to the embodiment of the application;

12-3 is a schematic structural diagram of a transfer head picking up chips from a transfer substrate according to an embodiment of the application;

FIG. 12-4 is a schematic structural diagram of a display substrate supported by a support table according to an embodiment of the present application;

12-5 is a schematic structural diagram of alignment of a transfer head and a display substrate according to an embodiment of the application;

12-6 is a schematic structural diagram of a transfer head and a display substrate being attached according to an embodiment of the application;

12-7 is a schematic diagram of a bonding structure of a first pad and a second pad provided by an embodiment of the application;

12-8 is a schematic structural diagram of the transfer head leaving the display substrate according to the embodiment of the application;

FIG. 13 is a second schematic flowchart of a chip transfer method provided by an embodiment of the present application;

Description of reference numbers:

1-carrying platform, 2-transfer head, 21-connecting rod, 211-connecting end, 31-first electrical signal generator, 32-first transducer, 33-first horn, 331-expansion hole, 332-installation hole, 35-second electrical signal generator, 36-second transducer, 37-second horn, 41-X-Y axis moving platform, 42-Z axis moving platform, 51-energy conversion piece, 61-growth substrate, 62-Micro LED chip, 621-first pad, 63-pyrolytic adhesive layer, 64-transfer substrate, 71-circuit substrate, 72-second pad, 73-conductive channel layer, 8- Mounting fixture, 81-mounting end.

Embodiments of the present invention

In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the related drawings. The preferred embodiments of the present application are shown in the accompanying drawings. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that a thorough and complete understanding of the disclosure of this application is provided.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the present application are for the purpose of describing particular embodiments only, and are not intended to limit the present application.

In the related art, when transferring LED chips, it is necessary to heat the entire surface of the display substrate at a high temperature to keep the metal pads on the display substrate in a melted state; The electrode pads of the LED chip are only in contact with the metal pads in the melted state on the display substrate and are not fixed. In the subsequent LED chip transfer process, the electrode pads of the previously transferred Micro LED chips are easily connected to the circuit board. The metal pads on it are detached, resulting in low yield; and after multiple batches of LED chips are transferred and heated at high temperature, it is easy to have a thermal impact on the display substrate, which affects the reliability and service life of the display substrate.

Based on this, the present application hopes to provide a solution that can solve the above technical problems, the details of which will be described in the subsequent embodiments.

This embodiment provides a chip transfer device, which can be used to transfer chips. The chips can include various semiconductor chips, such as light-emitting chips (such as LED chips, which can include ordinary-sized LED chips, Micro LED chips, Mini LED chips, etc.) ), driver chips, control chips, resistor chips, capacitor chips, etc. It can be used for the transfer of a single or a small number of chips, and it can also be used for the batch transfer of a large number of chips.

The chip transfer device provided in this embodiment includes a carrying platform, a transfer head, a motion control platform and a vibration control platform, wherein:

The carrying table is configured to carry the circuit substrate. The circuit substrate is provided with a chip bonding area, and the chip bonding area is provided with a second pad corresponding to the first pad on the chip. When the circuit substrate is carried on the carrier, the second pad is far away from the carrier and the The contact side of the circuit substrate is used for docking with the first pad of the chip to be transferred; it should be understood that the circuit substrate in this embodiment can be flexibly set according to specific application scenarios, for example, when the transferred chip is a light-emitting chip, the circuit The substrate can be, but is not limited to, a display substrate in the display field (the display substrate can be applied to, but not limited to, televisions, monitors, mobile terminals, wearable devices, advertising screens, and signs), and a light board in the lighting field (the light board can be Applied but not limited to the field of household lighting, medical lighting, decoration, automotive, transportation).

The transfer head is configured to pick up the chip from the transfer substrate, and the first pad of the chip picked up by the transfer head is away from the side of the chip in contact with the transfer head, so as to be opposite to the second pad; the transfer head in this embodiment can pass But it is not limited to picking up chips from the transfer substrate by adsorption methods such as magnetic force, static electricity, vacuum, etc. The transfer head in this embodiment can pick up one chip from the transfer substrate at a time, and can also pick up two or more chips as required ( That is, multiple chips); the transfer substrate in this embodiment may be a growth substrate for chips, or a transient substrate for carrying chips transferred from the growth substrate.

The motion control platform is configured to drive the transfer head and/or the carrying table to move, so as to connect the first pad of the chip picked up by the transfer head with the second pad in the corresponding chip bonding area on the circuit substrate, and make the Relative pressure is generated between the butted first pad and the second pad. The motion control platform in this embodiment can move and/or rotate in a super-corresponding direction by driving at least one of the transfer head and the carrying table, so that the first pad of the chip picked up by the transfer head is in the corresponding chip bonding area on the circuit substrate. The second pad is butted (that is, the first pad is in opposite contact with the corresponding second pad), and after the first pad and the second pad are butted, at least one of the transfer head and the carrier can be driven Move so as to create relative pressure between the first pad and the second pad. For example, the transfer head can be controlled to move toward the transfer head, so that the first pad of the chip picked up on the transfer head generates a pressure on the corresponding second pad on the circuit substrate, or the transfer head can be controlled to move toward the transfer head, so that the circuit substrate The second pad produces a pressure on the first pad of the chip picked up on the transfer head, and of course, both the transfer head and the carrier can be controlled to move toward each other. And it should be understood that the magnitude of the pressure generated in this embodiment meets the bonding requirements of the first pad and the second pad, and will not affect the first pad (or chip) and the second pad (or circuit board) to cause damage. For ease of understanding, a specific motion control manner is illustrated in the following chapters in this embodiment.

The vibration control platform is configured to generate high-frequency mechanical vibration, and the high-frequency mechanical vibration acts on the chip picked up by the transfer head and/or the circuit substrate carried by the carrier, so that the butted first pad and second pad are in the high-frequency mechanical Bonding is done under vibration and pressure. Since both the first pad and the second pad are made of conductive materials, the essence of the bonding between the first pad and the second pad is the effect of pressure and high-frequency mechanical vibration on the first pad and the second pad. In the close contact between the two, electron sharing and atomic diffusion are generated, thereby forming a conductive channel layer and realizing bonding. For example, when one of the first pad and the second pad is made of gold and the other is made of aluminum, the first pad and the second pad will be close together under the action of pressure and high-frequency mechanical vibration. Electron sharing and atomic diffusion occur in the contact, thereby forming an intermetallic compound layer, that is, a conductive channel layer, to achieve bonding.

In addition, in this embodiment, when an oxide layer film is formed on the surface of the first pad and/or the second pad, the oxide layer film can be broken by high-frequency mechanical vibration, so that the first pad can be lifted. The success rate of bonding with the second pad.

The high-frequency mechanical vibration in this embodiment refers to the mechanical vibration whose vibration frequency is above 10KHZ, for example, the vibration frequency may be between 10KHZ and 45KHZ. And it should be understood that the vibration amplitude of the mechanical vibration in this embodiment can be flexibly set, and the vibration amplitude is set so that the first pad and the second pad can be bonded without affecting the first pad (or chip) and the second pad (or circuit substrate).

It can be seen that the chip transfer device provided in this embodiment can drive the transfer head and/or the carrying platform of the chip transfer device to move through its motion control platform after picking up chips from the transfer substrate through its transfer head, so as to transfer the chips picked up by the transfer head. The first pad is butted with the corresponding second pad on the circuit substrate on the bearing platform, so that a relative pressure is generated between the butted first pad and the second pad, and the vibration control platform generates the effect on the transfer Under the high-frequency mechanical vibration of the chip picked up by the head and/or the circuit substrate carried by the carrier, the first pad and the second pad that are connected to each other are bonded, and there is no need to heat the circuit substrate at high temperature to avoid high temperature heating to the circuit substrate. Various adverse effects caused; and it can also avoid the occurrence of detachment of the first pad of the previously transferred chip and the corresponding second pad on the circuit substrate due to non-bonding during the subsequent chip transfer process, improving the chip. Bond yield during transfer.

In this embodiment, the vibration control platform of the chip transfer device may include at least one of a first vibration generating part and a second vibration generating part; wherein the first high-frequency mechanical vibration generated by the first vibration generating part acts on the transfer head , so as to act on the chip picked up by the transfer head; the second high-frequency mechanical vibration generated by the second vibration generating component acts on the bearing platform, thereby acting on the circuit substrate carried by the bearing platform. That is, in this embodiment, in order to bond the first pad and the second pad, only the first high-frequency mechanical vibration acting on the transfer head, or only the second high-frequency mechanical vibration acting on the bearing platform can be generated as required. The first high-frequency mechanical vibration acting on the transfer head and the second high-frequency mechanical vibration acting on the bearing platform can also be generated according to requirements. For ease of understanding, several setting examples are used for illustration below.

Vibration control platform setting example 1:

Referring to the chip transfer device shown in FIG. 1 , it includes a carrier table 1 , a transfer head 2 , and a first vibration generating component. The first vibration generating component includes a first electrical signal generator 31, a first transducer 32, and a first horn 33. The first horn 33 is located between the first transducer 32 and the transfer head 2, and the first horn 33 is located between the first transducer 32 and the transfer head 2. An electrical signal generator 31 is configured to generate a first high-frequency electrical signal, and the first transducer 32 is configured to convert the first high-frequency electrical signal output by the first electrical signal generator 31 into a first high-frequency mechanical vibration , the first amplitude transformer 33 is configured to amplify the amplitude of the first high-profile mechanical vibration generated by the first transducer 32 and transmit it to the transfer head, so as to act on the chips picked up by the transfer head. The first electrical signal generator 31 in this example may be, but is not limited to, a first power supply/ultrasonic controller, which is configured to convert 50HZ electrical energy into a first high-frequency electrical signal of 10KHZ to 45KHZ, such as 10KHZ, 15KHZ , 20KHZ, 25KHZ , 30KHZ, 40KHZ Or the first high frequency electrical signal of 45KHZ. In this example, the first vibration generating component can be controlled to generate the first high-frequency mechanical vibration after the first pad of the chip grasped by the transfer head is butted with the corresponding second pad on the circuit substrate, and then the first pad of the chip can be controlled to generate the first high-frequency mechanical vibration. After the first pad and the second pad are bonded, the first vibration generating part is turned off; the first vibration generating part can also be turned on during each chip transfer process, or during the entire chip transfer process, as required to generate the first vibration. High frequency mechanical vibration.

In this example, the transfer head 2 can be fixedly connected to one end of the first horn 33 , and the two can also be tightly connected and not fixedly connected, at least to ensure that the first high-frequency mechanical vibration energy can be transmitted to the transfer head 2 ie Can.

Vibration control platform setting example 2:

Referring to the chip transfer device shown in FIG. 2 , it includes a carrier table 1 , a transfer head 2 , and also includes a second vibration generating component. The second vibration generating component includes a second electrical signal generator 35, a second transducer 36, and a second horn 37. The second horn 37 is located between the second transducer 36 and the bearing platform 1, and the first The second electrical signal generator 35 is configured to generate a second high-frequency electrical signal, and the second transducer 36 is configured to convert the second high-frequency electrical signal output by the second electrical signal generator 35 into a second high-frequency mechanical vibration , the second amplitude transformer 37 is configured to amplify the amplitude of the second high-profile mechanical vibration generated by the second transducer 36 and transmit it to the carrier, thereby acting on the circuit substrate carried by the carrier. The second electrical signal generator 35 in this example may be, but is not limited to, a second power supply/ultrasonic controller, which is configured to convert the electrical energy of 50HZ into a second high-frequency electrical signal of 10KHZ to 45KHZ, such as 10KHZ, 18KHZ , 20KHZ, 26KHZ , 30KHZ, 40KHZ Or the second high frequency electrical signal of 45KHZ. In this example, the second vibration generating component may be controlled to generate the second high-frequency mechanical vibration after the first pad of the chip grasped by the transfer head is butted with the corresponding second pad on the circuit substrate, and the second vibration generating component may be controlled to generate the second high-frequency mechanical vibration. After the first pad and the second pad are bonded, the second vibration generating part is turned off; the second vibration generating part can also be turned on during each chip transfer process, or during the entire chip transfer process, as required to generate the second vibration generating part. High frequency mechanical vibration.

In this example, the carrying table 1 can be fixedly connected with the second horn 37 , and the two can also be closely attached and not fixedly connected, as long as the second high-frequency mechanical vibration can at least be transmitted to the carrying table 1 .

Vibration control platform setting example three:

Referring to the chip transfer device shown in FIG. 3 , compared to the chip transfer device shown in FIGS. 1 and 2 , it includes a first vibration generating part and a second vibration generating part. In this example, only one of the first vibration generating part and the second vibration generating part can be controlled to activate to generate the first high-frequency mechanical vibration or the second high-frequency mechanical vibration according to demand; the first vibration generating part can also be controlled according to demand Both the component and the second vibration generating component are activated to generate the first high frequency mechanical vibration and the second high frequency mechanical vibration.

In this example, when both the first vibration generating part and the second vibration generating part are controlled to be activated, the first high frequency electrical signal generated by the first electrical signal generator 31 and the first high frequency electrical signal generated by the second electrical signal generator 35 can be controlled At least one of the phases and frequencies of the high-frequency electrical signals are different, so as to enhance the vibration effect of the first high-frequency mechanical vibration and the second high-frequency mechanical vibration, and further ensure the bonding quality of the first pad and the second pad.

In this example, the second vibration amplitude of the second high-frequency mechanical vibration can be set to be different from the first vibration amplitude of the first high-frequency mechanical vibration, for example, the pseudo second vibration amplitude can be set larger than the first vibration amplitude value.

It should be understood that the first electrical signal generator 31 and the second electrical signal generator 35 in this example may also multiplex one electrical signal generator in some application scenarios. The first transducer 32 and the second transducer 36 may also reuse one transducer in some application scenarios.

In this embodiment, the motion control platform can drive the transfer head and/or the carrier to move in the corresponding direction, so as to connect the first pad of the chip picked up by the transfer head with the second pad in the corresponding chip bonding area on the circuit substrate The disks are butted, and a relative pressure is generated between the butted first pads and the second pads. The motion control platform can further control the movement of the drive transfer head, or only control the movement of the carrying table, or optionally control the movement of the transfer head and the carrying table. Moreover, the way of controlling the movement of the transfer head and/or the carrying table includes movement and/or rotation, and the direction of controlling the movement of the transfer head and/or the carrying table can also be flexibly set according to requirements. For ease of understanding, this embodiment is described by taking the chip transfer device located in the three-dimensional coordinate system as an example. The motion control platform in this embodiment may include an X-Y axis mobile platform that controls the target object to move in the X axis or Y axis direction and a Z axis mobile platform that controls the target object to move in the Z axis direction. Of course, the control target can also be set according to requirements. A rotating control platform where the object turns in the corresponding direction. Refer to FIG. 1 to FIG. 6 for an example of setting the motion control platform shown in this embodiment.

Referring to the three chip transfer devices shown in FIGS. 1 to 3 , the motion control platform includes a Z-axis moving platform 42 that drives the transfer head 2 to move along the Z-axis, and a Z-axis moving platform 42 that drives the carrier table 1 to move along the X-axis or the Y-axis. The X-Y axis moving platform 41, through the X-Y axis moving platform 41, can control the carrier table 1 to move in the corresponding direction, so that the chip bonding area on the circuit substrate on the carrier table 1 corresponds to the position of the chip picked up by the transfer head 2; The transfer head 2 can be controlled to move in a direction close to the carrying table 1 through the Z-axis moving platform 42, so that the first pad of the chip picked up by the transfer head 2 is butted with the second pad in the corresponding chip bonding area on the circuit substrate, and is After the two are docked, they continue to control the tendency of the transfer head 2 to move in the direction close to the bearing platform 1, so that the first pad generates a pressure on the second pad to which it is butted. In Figure 1-3, the pressure is downward. a pressure.

Referring to the chip transfer device shown in FIG. 4 , its motion control platform includes a Z-axis moving platform 42 that drives the carrying table 1 to move along the Z-axis, and an X-Y axis moving platform 41 that drives the transfer head 2 to move along the X-axis or Y-axis , the transfer head 2 can be controlled to move in the corresponding direction through the X-Y axis moving platform 41, so that the chip bonding area on the circuit substrate on the bearing platform 1 corresponds to the position of the chip picked up by the transfer head 2; the Z axis moving platform 42 can control the carrying table 1 to move in the direction close to the transfer head 2, so that the first pad of the chip picked up by the transfer head 2 is docked with the second pad in the corresponding chip bonding area on the circuit substrate, and continues after the two are docked. The tendency of the carrier table 1 to move toward the direction close to the transfer head 2 is controlled, so that the second pad produces a pressure on the first pad that it abuts against. In FIG. 4 the pressure is an upward pressure.

Referring to the chip transfer device shown in FIG. 5, its motion control platform includes a Z-axis moving platform 42 that drives the transfer head 2 to move along the Z-axis, and an X-Y axis moving platform 41 that drives the transfer head 2 to move along the X-axis or Y-axis , the transfer head 2 can be controlled to move in the corresponding direction through the X-Y axis moving platform 41, so that the chip bonding area on the circuit substrate on the bearing platform 1 corresponds to the position of the chip picked up by the transfer head 2; the Z axis moving platform 42 The transfer head 2 can be controlled to move in the direction close to the bearing platform 1, so that the first pad of the chip picked up by the transfer head 2 is connected to the second pad in the corresponding chip bonding area on the circuit substrate, and continues after the two are connected. The tendency of the transfer head 2 to move toward the direction close to the bearing platform 1 is controlled, so that the first pad produces a downward pressure on the second pad that it abuts against. In this example, the carrier table 1 may remain stationary during the chip transfer process.

Referring to the chip transfer device shown in FIG. 6 , its motion control platform includes a Z-axis moving platform 42 that drives the carrier table 1 to move along the Z-axis, and an X-Y axis moving platform 41 that drives the carrier table 1 to move along the X-axis or Y-axis , through the X-Y axis moving platform 41 can control the bearing platform 1 to move in the corresponding direction, so that the chip bonding area on the circuit substrate on the bearing platform 1 corresponds to the position of the chip picked up by the transfer head 2; through the Z axis moving platform 42 can control the carrying table 1 to move in the direction close to the transfer head 2, so that the first pad of the chip picked up by the transfer head 2 is docked with the second pad in the corresponding chip bonding area on the circuit substrate, and continues after the two are docked. The tendency of the carrier table 1 to move toward the direction close to the transfer head 2 is controlled, so that the second pad generates an upward pressure on the first pad it abuts against. In this example, the transfer head 2 can remain stationary after picking up chips from the transfer substrate and reaching a set position.

Of course, it should be understood that the chip transfer arrangement in the above examples may further include controlling the rotation of at least one of the transfer head 2 and the carrier table 1 to a preset direction to control the platform, so that the first pad and the second pad are rotated Also angularly aligned when docked. And the above examples are only examples for easy understanding, on this basis, other alternative combinations can also be used according to requirements. 2 and the carrying platform 1 can both move along the Z axis, etc., which will not be repeated here.

Another optional embodiment:

The chip transfer apparatus provided in this embodiment may further include a heating platform, and the heating platform is configured to heat the circuit substrate on the bearing platform to a first temperature range, thereby promoting the bonding of the butted first pads and second pads Atom diffusion at the interface improves bonding efficiency and quality. The first temperature range in this embodiment is a low temperature range, and the maximum temperature value in the first temperature range is less than the first temperature threshold for melting the first pad, and less than the second temperature for melting the second pad critical value. For example, the value of the first temperature range may be, but not limited to, 70°C to 150°C.

In an example of this embodiment, the heating platform can heat the circuit substrate on the supporting platform by, but not limited to, converting electrical energy into thermal energy. In this example, the heating platform includes an energy conversion element that converts electrical energy into thermal energy, and the energy conversion element may or may not be provided on the supporting table. In some application scenarios, when the energy conversion member is disposed on the carrying table, the energy conversion member may be embedded in the carrying table. For example, referring to the chip transfer device illustrated in FIGS. 1 to 6 , the energy conversion member 51 can be embedded in the carrier 1 to improve integration and simplify the device structure. The carrier 1 has heat transfer characteristics. Of course, the energy conversion member 51 can also be directly disposed on the surface of the carrying table 1. For example, referring to the chip transfer device shown in FIG. 7, the energy conversion member 51 is disposed on the upper surface of the carrying table 1. At this time, the circuit substrate can be directly disposed on the energy conversion element 51, thereby improving the heating efficiency and the utilization rate of energy. Of course, in other application examples, a part of the energy conversion member 51 may be exposed on the carrying platform, and a part may be embedded in the carrying platform. The specific setting method and the specific shape and size of the energy conversion member can be set flexibly, and will not be repeated here.

In another example of this embodiment, the stage may also be configured to carry the transfer substrate. That is, in this example, the stage may be used to carry the transfer substrate and the circuit substrate. Of course, it should be understood that the transfer substrate may not be disposed on the carrying table but be placed in other positions, which will not be repeated here.

In this example, the heating platform may also be configured to heat the transfer substrate on the stage to a second temperature range, where the second temperature range is a low temperature range, and the maximum temperature value in the second temperature range is less than the first temperature threshold value and the second temperature threshold. The second temperature range may be the same as or different from the above-mentioned first temperature range. For example, the value of the second temperature range can be but not limited to 80°C to 100°C, for example, it can be set to 80°C, 90°C or 100°C, etc.; or the second temperature range is also 70°C to 150°C. The heating platform heats the transfer substrate on the carrier table to the second temperature range, so that the first pad on the chip is preheated to a certain temperature before being picked up by the transfer head, which can further promote the first pad in the subsequent chip transfer process. Bond with the corresponding second pad to improve the bonding efficiency and quality. And when the chip is fixed on the transfer substrate by the pyrolysis adhesive, the debonding treatment can also be performed by the heating, which avoids setting a heating device separately to debond the transfer substrate, further simplifies the transfer process, improves the transfer efficiency, and reduces the transfer cost.

Of course, it should be understood that, in some application examples of this embodiment, the heating platform may not heat the transfer substrate.

In yet another example of this embodiment, the heating platform may also be configured such that after the second pads in the bonding regions of the chips of the circuit substrate are bonded to the corresponding first pads of the chips, The circuit substrate is heated to a third temperature range, the third temperature range is a high temperature range, and the minimum temperature value in the third temperature range is greater than or equal to the first temperature threshold and/or the second temperature threshold, so that the first soldering The pads and/or the second pads are melted, so that after the first pads and/or the second pads change from a high-temperature melting state to a low-temperature curing state, the bond between the first and second bonding pads can be further improved. bond quality. Moreover, since the circuit substrate only needs to be heated at a high temperature once, the influence of the high temperature heating on the circuit substrate can be minimized.

In the chip transfer device provided in this embodiment, after the first pad of the chip is connected with the second pad in the corresponding chip bonding area on the circuit substrate, the pressure and high-frequency mechanical vibration acting between the two Furthermore, at least one of the first pad and the second pad of the platform can be heated to promote the bonding therebetween, which can further improve the bonding efficiency and quality.

Another optional embodiment:

This embodiment provides a chip transfer method of the chip transfer apparatus in the above examples, as shown in FIG. 8 , which includes but is not limited to:

S801: Set the circuit substrate on the stage.

It should be understood that, in this embodiment, when the carrier table is further configured to carry the circuit substrate, the circuit substrate can also be arranged on the carrier table, and can be arranged simultaneously with the circuit substrate, or can be arranged prior to the circuit substrate , or later than the circuit board setting.

S802: Pick up chips from the transfer substrate through the transfer head.

The transfer head in this step can pick up the chips from the transfer substrate by, but not limited to, at least one of magnetic force, electrostatic force, and vacuum adsorption.

S803: Control the movement of the transfer head and/or the carrying table, so that the first pads of the chips picked up by the transfer head are butted with the second pads in the corresponding chip bonding areas on the circuit substrate, and make the butted first pads Relative pressure is created between the pad and the second pad.

As shown in the above examples, in this embodiment, at least one of the transfer head and the stage can be controlled to move in a super-corresponding direction, so that the first pad of the chip picked up by the transfer head is bonded to the corresponding chip on the circuit substrate The second pads in the area are butted, and a relative pressure is generated between the butted first pads and the second pads, which will not be repeated here.

S804: and control the vibration control platform to generate high-frequency mechanical vibration, and the high-frequency mechanical vibration acts on the chip picked up by the transfer head and/or the circuit substrate carried by the carrier, so that the butted first pad and second pad are in the high-frequency mechanical Bonding is done under vibration and pressure.

As shown in the above examples, in this embodiment, the vibration control platform can be controlled to generate at least one of the first high-frequency vibration acting on the transfer head and the second high-frequency vibration acting on the bearing platform, so that the docked The first pad and the second pad are bonded under high-frequency mechanical vibration and pressure, which will not be repeated here.

In an example of this embodiment, in order to improve the bonding efficiency and quality of the first pad and the second pad, the bonding is completed under high-frequency mechanical vibration and pressure on the butted first pad and the second pad. Before the combination, the method may further include: controlling a heating platform of the chip transfer device to heat the circuit substrate on the bearing platform to a first temperature range. For example, in one application scenario, the heating platform of the chip transfer device can be controlled to preheat the circuit substrate on the carrier table to a first temperature range before the chip is picked up from the transfer substrate by the transfer head, and can be used in the subsequent chip transfer process. maintained in this first temperature range.

In yet another example of this embodiment, when the carrier table is configured to also carry the transfer substrate, before the chips are picked up from the transfer substrate by the transfer head, the method further includes:

The transfer substrate is set on the carrier table, and before the chip is picked up from the transfer substrate by the transfer head, the heating platform of the chip transfer device is controlled to heat the transfer substrate on the carrier table to the second temperature range; The pads are preheated to a certain temperature before being picked up by the transfer head, which can further promote the bonding between the first pads and the corresponding second pads in the subsequent chip transfer process, and improve the bonding efficiency and quality. And when the chip is fixed on the transfer substrate by the pyrolysis adhesive, the debonding treatment can also be performed by the heating, so that a separate heating device can be avoided to debond the transfer substrate, which further simplifies the transfer process, improves the transfer efficiency, and reduces the transfer cost.

In this embodiment, during a chip transfer process, the vibration control platform is controlled to generate high-frequency mechanical vibration, so that after the butted first pad and second pad are bonded under high-frequency mechanical vibration and pressure, When the transfer head is controlled to be far away from the circuit substrate, the suction force generated by the transfer head to keep picking up chips can be controlled to be away from the circuit substrate;

When residual chips are adsorbed on the transfer head, it indicates that some chips have not been successfully transferred during the chip transfer process, and a repair process needs to be performed. In this embodiment, other existing repair processes can be used for chip repair. The new repair process provided in this embodiment can also be used. The repair process is shown in FIG. 9, including:

S901: Remove the residual chips on the transfer head and obtain the target chip bonding area corresponding to the residual chips on the circuit substrate.

S902: Pick up chips of the same type as the residual chips from the transfer substrate as supplementary chips by using the transfer head.

In one application scenario, the repair process can be performed after the other chip bonding areas on the circuit substrate have been transferred. At this time, before the chip of the same type as the residual chip is picked up from the transfer substrate by the transfer head as a supplementary chip , and also includes transferring the chips on the transfer substrate to other remaining chip bonding areas on the circuit substrate through the transfer head through the chip transfer method of the above example.

In another application scenario, the patching process can also be performed first, and then the next chip transfer can be performed by using the chip transfer method of the above example.

S903: Control the movement of the transfer head and/or the stage to connect the first pads of the complementary chips picked up by the transfer head with the second pads in the bonding area of the target chip on the circuit substrate, and make the butted first pads Relative pressure is generated between the pad and the second pad.

S904: and control the vibration control platform to generate high-frequency mechanical vibration, and the high-frequency mechanical vibration acts on the complementary chip and/or the circuit substrate, so that the butted first pad and second pad are bonded under high-frequency mechanical vibration and pressure .

In another example of this embodiment, in order to further improve the overall bonding quality and reliability, after the second pads in the bonding regions of each chip of the circuit substrate are bonded to the first pads of the corresponding chip, the That is, after the chip transfer is completed, it can also include:

Controlling the heating platform to heat the circuit substrate on the bearing platform to a third temperature range, so as to melt the bonded first pad and/or the second pad, so that the first pad and/or the second pad are After the high temperature melting state becomes the low temperature curing state, the bonding quality between the bonded first pad and the second pad can be further improved. Moreover, since the circuit substrate only needs to be heated at a high temperature once, the influence of the high temperature heating on the circuit substrate can be minimized.

Yet another optional embodiment:

For ease of understanding, this embodiment takes a specific application scenario as an example for description on the basis of the foregoing embodiments.

In this embodiment, it is assumed that the material of the first pad of the chip includes gold, such as gold; the material of the second pad on the circuit substrate includes aluminum, such as aluminum. And set the chip as a flip-chip Micro LED chips, circuit substrates are display substrates. The following describes the process from the growth of the Micro LED chip to the transfer to the circuit substrate as an example, as shown in Figure 13, including:

S1301: Growing Micro LED chips on a growth substrate.

For example, as shown in FIG. 10-1, a Micro LED chip 62 is prepared on the growth substrate 61 through but not limited to epitaxy, exposure, development, etching and deposition. The Micro LED chip at this time is generally referred to as COW (Chip On Wafer, chip on wafer), Micro The first pad 621 of the LED chip is made of gold metal by evaporation; the first pad 621 includes an electrode pad, and can also include other pads according to requirements.

S1302: Laminate the Micro LED chip on the growth substrate to the side of the transfer substrate (which may also be referred to as a temporary storage substrate) provided with a pyrolytic adhesive layer.

The transfer substrate in this example can be, but is not limited to, a sapphire substrate with a pyrolytic adhesive film or a sapphire substrate coated with a pyrolytic adhesive solution; as shown in FIG. 10-2, the Micro LED chips 62 on the growth substrate 61 and the transfer substrate are The substrate 64 is attached to the side provided with the pyrolysis adhesive layer 63 . Of course, the pyrolytic adhesive layer can be replaced with a photolytic adhesive layer or other types of adhesive layers, which will not be repeated here.

S1303: Peel off the growth substrate, thereby transferring the Micro LED chips to the transfer substrate.

For example, the growth substrate can be peeled off using but not limited to LLO (Laser Lift Off, laser lift off) technology, the principle of which is that a specific wavelength (eg 266nm) laser makes the growth substrate and the Micro The gallium nitride between the LED chips is decomposed into metal gallium and nitrogen to achieve growth substrate lift-off. Referring to Fig. 10-3, the arrow in the figure shows the laser irradiation direction, the growth substrate 61 can be peeled off so that the Micro The LED chips 62 are transferred to the transfer substrate 64, and the state after the transfer is shown in FIG. 10-4.

S1304: Place the transfer substrate on the carrier table of the chip transfer device.

In this example, the chip transfer apparatus shown in FIG. 1 is used, and as shown in FIG. 12-1 , the stage 1 is configured to also carry the transfer substrate 64 . In an application example, the transfer head 2 of the chip transfer device shown in FIG. 1 is fixedly connected to the first horn 33 . And it should be understood that the way of fixed connection between the transfer head 2 and the first horn 33 can be set flexibly, such as but not limited to clip connection, socket connection, screw connection, pin connection, threaded screw hole fitting connection, etc., and The connection can be detachable or non-detachable. For ease of understanding, a specific fixed connection manner is used as an example for description, as shown in FIG. 11-1 to FIG. 11-5. In Figure 11-1, the transfer head 2 is provided with a connecting rod 21, one end of the connecting rod is connected to the transfer head 2, and the other end is connected to the first horn 33 as a connecting end 211. In this example, the connecting end 211 is set as Cylindrical fixed terminal. Referring to FIG. 11-2 , one end of the first horn 33 is connected to the first transducer 32 , and the other end is provided with an expansion hole 331 and a mounting hole 332 . See the mounting fixture 8 shown in 11-3, which has a mounting end 81, which in this example is provided as an oval head. 11-4, during installation, the installation end 81 of the installation fixture 8 is inserted into the expansion hole 331, the installation end 81 is an oval head, and the expansion hole 331 is not elliptical, and the installation end 81 is inserted into the expansion hole 331. parallel to the short radius of the expansion hole 331; then rotate the mounting end 81 so that the long radius of the mounting end 81 gradually tends to be parallel to the short radius of the expansion hole 331, so that the short radius of the expansion hole 331 expands, and the long radius of the mounting end 81 is the same as the short radius of the expansion hole 331. When the short radius of the expansion hole 331 is close to the vertical, the short radius of the mounting hole 332 (also set as an oval hole in this example) is also driven to expand to the maximum. At this time, the connecting end 211 of the connecting rod 21 can be inserted into the installation hole 332, and then rotate the mounting end 81 so that its short radius and the short radius of the expansion hole 331 are nearly parallel, and then remove the mounting end 81 from the expansion hole 331. During this process, the expansion hole 331 and the short radius of the mounting hole 332 shrink, After the short radius of the mounting hole 332 is contracted, a tight connection is finally formed with the connecting end 211 .

S1305: Control the heating platform to preheat the transfer substrate on the carrier table, and then control the transfer head to pick up Micro LED chips from the transfer substrate on the carrier table.

Referring to Fig. 12-1, the transfer substrate 64 on the carrier table 1 is preheated to the second temperature range by controlling the heating platform. In this example, the heating temperature is set to 80°C. When the debonding is completed, the transfer substrate 64 is heated. Micro on The first solder leg of the LED chip is also heated to facilitate subsequent bonding. Referring to Figure 12-1 and Figure 12-3, the operation control platform controls the transfer head 2 and the carrier table 1, so that the transfer head 2 is close to the transfer substrate 64 on the carrier table 1, and finally picks up Micro LEDs from the transfer substrate 64 chip. The number of Micro LED chips picked up by the transfer head 2 at one time can be set flexibly, which can be a single chip or multiple chips, as shown in Figure 12-3. In this example, picking multiple chips is used as an example for description.

S1306: Place the display substrate on the carrying table.

Referring to FIG. 10-5 , the display substrate 71 is provided with a plurality of die bonding areas, and each die bonding area is provided with a second pad 72 corresponding to the first pad on the Micro LED chip. Referring to FIG. 12-4 , the display substrate 71 is placed on the support table 1, and the display substrate 71 is heated to a first temperature range by a heating platform. In this example, the heating temperature is also set to 80°C. It should be understood that, in this example, the display substrate 71 can be placed on the carrier table 1 of the chip transfer device at the same time in S1304, and the transfer substrate 64 and the display substrate 71 can be heated at the same time, thereby saving the preheating time and improving the transfer efficiency.

In this example, it is assumed that the second pad 72 on the display substrate 71 is made of aluminum metal by vapor deposition. Since the aluminum metal is rapidly oxidized in the air to form a nanometer-thick aluminum oxide film, the denser aluminum oxide film can prevent the internal further oxidation occurs.

S1307: Control the movement of the transfer head and the stage to connect the first pad of the Micro LED chip picked up by the transfer head with the corresponding second pad on the display substrate, and make the butted first and second pads relative pressure between them.

Referring to FIG. 12-5 , by moving the platform 42 along the Z axis and the platform 41 along the X-Y axis, the first pads of the Micro LED chips on the transfer head 2 are aligned with the corresponding second pads on the display substrate 71 . As shown in FIG. 12-6 , the Z-axis moving platform 42 is controlled so that after the corresponding first pad and the second pad are connected, keep the transfer head 2 pressed down, so that the Micro LED chip on the transfer head 2 can be soldered first. The disk generates a pressure F downward (ie, to the second pad that is butted against it), so that there is an interactive pressure between the first and second pads that are butted.

S1308: Control the vibration control platform to generate first high-frequency mechanical vibration, and the first high-frequency mechanical vibration acts on the Micro LED chip picked up by the transfer head, so that the butted first pad and second pad are under high-frequency mechanical vibration and pressure Bonding is completed.

Referring to FIG. 12-6 , the butted first pad and second pad are bonded under the action of pressure F and first high-frequency mechanical vibration Z.

In this example, the first pad of the Micro LED chip is made of gold metal, and the second pad on the display substrate is made of aluminum metal. The essence of the bonding between the first pad and the second pad is at the bonding interface ( gold-aluminum) in intimate contact resulting in electron sharing and atomic diffusion resulting in intermetallic compounds (IMCs), thus forming conductive channel layers 73 as shown in Figures 12-7. The low-temperature heating of the transfer substrate 64 and the display substrate 71 by the heating platform can promote the atomic diffusion at the bonding interface, and improve the bonding efficiency and quality. And the first high-frequency mechanical vibration Z (which may be, but not limited to, vibration generated by ultrasonic waves) can also break the oxide layer film on the surface of the second pad on the display substrate, so that the bonding power is higher.

S1309: Move the platform through the Z axis to control the rise of the transfer head.

Since the Micro LED chip is already bonded on the display substrate, the transfer head picks up the Micro LED The suction force of the LED chips is not enough to remove the bonded Micro LED chips, so in this example, the suction force generated when picking up the chips can be maintained when the control transfer head rises; The transfer head picks up and leaves the display substrate, so that it is convenient to find the chip bonding area where the chip transfer fails, so as to facilitate the subsequent repairing process. For example, as shown in Figure 12-8, it is assumed that during the current chip transfer process, there is a residual Micro chip with a bonding problem when the transfer head 2 rises. LED chip C, and get the residual Micro The LED chip C corresponds to the target bonding area on the display substrate. In order to re-transfer Micro to the target bonding area in the subsequent repair process LED chips. When re-transferring, the steps from S1305 to S1309 may be adopted but not limited to transfer. The chip transfer can also be performed according to other chip transfer methods, which will not be repeated here.

In some application scenarios, the same COW can only produce a single luminous color Micro LED chips, when red, green, and blue Micro LED chips need to be transferred to the display substrate in batches in production, when the chip transfer device provided in this application is used for chip transfer, the required amount can be set during COW production. Red, green and blue Micro LED chips are arranged in pitch and transferred to the display substrate in batches. Since the heating temperature of the carrier is not enough to melt the bonded Micro LEDs LED chips (among which the melting point of gold is 1064.18°C and the melting point of aluminum is 660.4°C), so the subsequent batches of chip transfer will not affect the Micro LED chips that have been transfer-bonded before; and because the chips in this application The transfer device has this advantage, so the chip transfer device is especially suitable for the repairing process of Micro LED chips.

S1310 : Control the heating platform to heat the display substrate on the bearing platform to a third temperature range, for example, greater than 660.4° C., so as to melt the bonded second pads.

Through this step, after the second pad is changed from a high temperature melting state to a low temperature curing state, the bonding quality between the bonded first pad and the second pad can be further improved. Moreover, since only one overall high temperature heating needs to be performed on the display substrate, the influence of the high temperature heating on the display substrate can be minimized.

Another optional embodiment:

This embodiment provides a display backplane, the display backplane includes a display substrate, a plurality of chip bonding areas are provided on the display substrate, and the display backplane further includes micro LED chips disposed in the plurality of chip bonding areas , and at least one micro LED chip is transferred to the chip bonding area using the chip transfer method shown in the above embodiment, which has higher yield, better reliability and longer service life than the existing display backplane.

This embodiment also provides a display, which includes a frame and a display backplane as shown above; the display backplane is fixed on the frame. The display can be made of various electronic devices using the display backplane shown above, for example, including but not limited to various smart mobile terminals, vehicle terminals, PCs, monitors, electronic advertising boards, and the like.

It should be understood that the application of the present invention is not limited to the above examples. For those of ordinary skill in the art, improvements or transformations can be made according to the above descriptions, and all these improvements and transformations should belong to the protection scope of the appended claims of the present invention.

Claims

A chip transfer device, comprising: a carrying table configured to carry a circuit substrate, the circuit substrate is provided with a chip bonding area, and the chip bonding area is provided with a first pad corresponding to a first pad on a chip Two pads, when the circuit substrate is carried on the carrier, the second pad is away from the side of the carrier that is in contact with the circuit substrate; the transfer head is configured to pick up chips from the transfer substrate, The first pad of the chip picked up by the transfer head is far away from the side of the chip in contact with the transfer head; the motion control platform is configured to drive the transfer head and/or the carrying table to move, so as to The first pad of the chip picked up by the transfer head is butted with the second pad in the corresponding chip bonding area on the circuit substrate, so that the butted first pad and the second pad are connected A relative pressure is generated between them; the vibration control platform is configured to generate high-frequency mechanical vibration, and the high-frequency mechanical vibration acts on the chip picked up by the transfer head and/or the circuit substrate The first pad and the second pad are bonded under the high-frequency mechanical vibration and the pressure.
The chip transfer apparatus of claim 1, wherein the vibration control platform includes at least one of a first vibration generating part and a second vibration generating part; the first vibration generating part includes a first electrical signal generator , a first transducer, a first horn, the first horn being located between the first transducer and the transfer head, the first transducer being configured to convert the first transducer A first high-frequency electrical signal output by an electrical signal generator is converted into a first high-frequency mechanical vibration, and transmitted to the chip picked up by the transfer head through the first horn; the second vibration generating component includes a first high-frequency mechanical vibration. Two electrical signal generators, a second transducer, and a second horn, the second horn is located between the second transducer and the carrier, and the second transducer is configured In order to convert the second high-frequency electrical signal output by the second electrical signal generator into a second high-frequency mechanical vibration, and transmit it to the circuit substrate on the carrying platform through the second amplitude transformer.
The chip transfer apparatus according to claim 2, wherein when the vibration control platform includes a first vibration generating part and a second vibration generating part, the difference between the first high frequency electrical signal and the second high frequency electrical signal At least one of phase and frequency are different.
The chip transfer apparatus of claim 2, wherein when the vibration control platform includes a first vibration generating component, the frequency of the first high-frequency electrical signal generated by the first electrical signal generator is configured to be 10KHZ to 45KHZ ;

When the vibration control platform includes a second vibration generating component, the frequency of the second high-frequency electrical signal generated by the second electrical signal generator is configured to be 10KHZ to 45KHZ.
The chip transfer apparatus according to any one of claims 1-4, wherein the chip transfer apparatus further comprises a heating platform configured to heat the circuit substrate on the carrying platform to a first The temperature range, the maximum temperature value within the first temperature range, is less than a first temperature threshold for melting the first pad, and is less than a second temperature threshold for melting the second pad.
The chip transfer apparatus of claim 5 , wherein the heating platform includes an energy conversion member that converts electrical energy into thermal energy, and the energy conversion member is disposed on the support table.
6. The chip transfer apparatus of claim 5, wherein the stage is further configured to carry the transfer substrate, and the heating stage is further configured to heat the transfer substrate on the stage to a second The temperature range, the maximum temperature value in the second temperature range, is smaller than the first temperature threshold value and the second temperature threshold value.
The chip transfer apparatus according to claim 5, wherein the heating platform is further configured so that after the second pads in each die bonding area of the circuit substrate are bonded to the first pads of the corresponding chips, The circuit substrate on the carrying table is heated to a third temperature range, and the minimum temperature value in the third temperature range is greater than or equal to the first temperature threshold and/or the second temperature threshold.
The chip transfer apparatus according to any one of claims 1-4, wherein the material of the first pad includes gold, and the material of the second pad includes aluminum.
The chip transfer apparatus according to any one of claims 1-4, wherein the chip comprises a micro LED chip, and the circuit substrate comprises a display substrate.
A chip transfer method, comprising: arranging a circuit substrate on a carrier table of the chip transfer device according to any one of claims 1-10; picking up chips from the transfer substrate by the transfer head; controlling the transfer head and/or the carrying table moves, so that the first pads of the chips picked up by the transfer head are butted with the second pads in the corresponding chip bonding areas on the circuit substrate, so that the butt joints A relative pressure is generated between the first pad and the second pad; and the vibration control platform is controlled to generate high-frequency mechanical vibration, and the high-frequency mechanical vibration acts on the chips and/or all the chips picked up by the transfer head. The circuit substrate carried by the bearing platform, so that the butted first pad and the second pad are bonded under the high-frequency mechanical vibration and the pressure.
The chip transfer method of claim 11, wherein before the butted first pad and the second pad are bonded under the high-frequency mechanical vibration and the pressure, further comprising: controlling the The heating platform of the chip transfer device heats the circuit substrate on the carrying platform to a first temperature range, and the maximum temperature value within the first temperature range is less than the first temperature that melts the first pad. a temperature threshold, and is less than a second temperature threshold that causes the second pad to melt.
The chip transfer method of claim 12, wherein the first temperature range is 70°C to 150°C.
13. The chip transfer method of claim 12, wherein the chip transfer is controlled before the butted first pad and the second pad are bonded under the high-frequency mechanical vibration and the pressure The heating platform of the unit includes:

Before the chip is picked up from the transfer substrate by the transfer head, the heating platform of the chip transfer device is controlled to heat the circuit substrate on the carrier table to the first temperature range.
The chip transfer method according to claim 14, wherein before the chips are picked up from the transfer substrate by the transfer head, the method further comprises: setting the transfer substrate on the stage; controlling the chip transfer device a heating platform for heating the transfer substrate on the carrying platform to a second temperature range; the maximum temperature value within the second temperature range is less than a first temperature threshold for melting the first pad, and less than a second temperature threshold that causes the second pad to melt.
The chip transfer method of claim 14 , wherein the control of the vibration control platform generates high-frequency mechanical vibration, so that the butted first pad and the second pad are in the high-frequency mechanical vibration and all the After the bonding is completed under the pressure, the method further includes: controlling the transfer head to keep away from the circuit substrate while maintaining the suction force generated when picking up chips; and removing the residual chips when the transfer head is adsorbed with residual chips. chip and obtain the target chip bonding area corresponding to the residual chip on the circuit substrate; pick up the chip of the same type as the residual chip from the transfer substrate through the transfer head as a supplementary chip; control the transfer head and /or the carrying table moves, so that the first pads of the complementary chips picked up by the transfer head are butted with the second pads in the bonding area of the target chip on the circuit substrate, so that the butted pads A relative pressure is generated between the first pad and the second pad; and the vibration control platform is controlled to generate high-frequency mechanical vibration, and the high-frequency mechanical vibration acts on the supplementary chip and/or the circuit substrate , so that the butted first pad and second pad are bonded under the high-frequency mechanical vibration and the pressure.
17. The chip transfer method of claim 16, wherein before the chip of the same type as the residual chip is picked up from the transfer substrate by the transfer head as a supplementary chip, further comprising transferring the transfer head by the transfer head The chips on the substrate are transferred to other chip bonding areas remaining on the circuit substrate.
The chip transfer method according to claim 14, wherein after the second pads in each die bonding area of the circuit substrate are bonded to the first pads of the corresponding chip, the method further comprises: controlling the heating platform The circuit substrate on the carrying table is heated to a third temperature range, and the minimum temperature value in the third temperature range is greater than or equal to the first temperature threshold and/or the second temperature threshold.
A display backplane, comprising a display substrate provided with a plurality of chip bonding areas, and a micro LED chip disposed in the plurality of chip bonding areas, the micro LED chip passing through any one of claims 11-18 The chip transfer method described in item is transferred to the chip bonding area.
A display comprising a frame and a display backplane as claimed in claim 19;

The display backplane is fixed on the frame.