WO2022220338A1 - Substrate processing apparatus provided with lift portion - Google Patents

Substrate processing apparatus provided with lift portion Download PDF

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Publication number
WO2022220338A1
WO2022220338A1 PCT/KR2021/009517 KR2021009517W WO2022220338A1 WO 2022220338 A1 WO2022220338 A1 WO 2022220338A1 KR 2021009517 W KR2021009517 W KR 2021009517W WO 2022220338 A1 WO2022220338 A1 WO 2022220338A1
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WO
WIPO (PCT)
Prior art keywords
pocket
substrate
lift
support
center
Prior art date
Application number
PCT/KR2021/009517
Other languages
French (fr)
Korean (ko)
Inventor
이백주
서동원
황재순
Original Assignee
주식회사 한화
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Filing date
Publication date
Application filed by 주식회사 한화 filed Critical 주식회사 한화
Publication of WO2022220338A1 publication Critical patent/WO2022220338A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • the present invention relates to a substrate processing apparatus for depositing a thin film on a substrate or cleaning or etching a substrate.
  • thin film deposition and etching of the substrates performed in the chamber may be performed with respect to the plurality of substrates.
  • the present invention is a substrate processing apparatus capable of simultaneously and evenly processing a plurality of substrates, and may be provided with a lift unit capable of supporting the substrate and elevating the substrate.
  • the temperature gradient of the substrate may vary depending on the shape of the lift part, and the uniformity of the thin film deposited on the substrate may be affected.
  • the present invention may include a disk unit disposed in a chamber for processing a substrate, a pocket unit provided in plurality in the disk unit, on which each substrate is seated, and arranged at an equal angle with respect to the center of the disk unit, and a lift unit for elevating the substrate.
  • the center of the central portion coincides with the center of the pocket portion, and one end of the support piece may be connected to the center portion, and the support piece may be arranged at an equal angle with respect to the center of the central portion and may extend radially.
  • the pocket portion may include a seating surface and a seating sill.
  • the seating surface may seat the substrate and may have the same shape as the substrate.
  • the seating jaw may be formed to face along the circumference of the seating surface, and the seating jaw may protrude vertically upward with respect to the seating surface.
  • the lift part may include a shaft part connected to the support part and extending in length in a direction perpendicular to the support part.
  • a decut portion for fixing the lift portion to the pocket portion by limiting the operation of the support portion during rotation of the pocket portion may be provided on one side of the shaft portion.
  • the decut part is a part of the shaft part cut in the axial direction, and may extend along the length direction of the shaft part.
  • a lift driving unit spaced apart from the disc unit may be provided when the disc unit is rotated.
  • the lift driving unit enters the through hole of the pocket unit in a state where the disc unit is stopped and pushes the end of the shaft unit to raise the lift unit from the pocket unit.
  • the temperature gradient of the substrate in contact with the lift part may affect the uniformity of the thin film to be deposited, and by reducing the temperature gradient, the uniformity of the thin film may be improved.
  • the lift part When depositing the space-division PEALD thin film, the lift part may be located at the exact center of the pocket part into which the substrate is inserted due to the structure of the chamber.
  • the temperature of the center of the substrate may be lower than the temperature of the peripheral portion.
  • the support portion of the lift unit in contact with the substrate may be provided in a shape having a minimum area.
  • the seated substrate may be in contact with the support portion and the seating surface of the pocket portion.
  • a heating means may be provided between the disk portion and the chamber surface, and the heat generated by the heating means may be transferred to the substrate through the disk portion and the pocket portion.
  • the substrate may come into contact with different types of materials during processing, which may result in temperature gradients. Accordingly, the substrate can lower the temperature gradient of the substrate by minimizing the contact area of one of the two types of materials in contact.
  • the area of the support part of the lift part may be minimized while leaving a minimum structure for stable substrate support.
  • the shape of the support part having three support pieces extending radially from the center may be an example for such a structure.
  • the substrate When the substrate is processed by the space division type PEALD, the substrate may perform a first rotation about the center of the pocket portion and a second rotation about the center of the disk portion. Through the first rotation and the second rotation, the substrate may have a uniform temperature gradient.
  • the temperature gradient of the substrate may be improved by at least one of the first rotation, the second rotation, and the shape of the minimum area of the support part, and thus an even film treatment process may be performed.
  • FIG. 1 is a side cross-sectional view of a substrate processing apparatus of the present invention.
  • Figure 2 is a plan view of the disk portion in a state in which the substrate of the present invention is seated in the pocket portion.
  • Figure 3 shows an embodiment of the lift unit of the present invention.
  • FIG. 4 is a lower perspective view of the lift unit of FIG. 3 ;
  • FIG. 5 is a bottom view of the lift unit of FIG. 4 .
  • the apparatus for processing the substrate 50 of the present invention that processes the substrate 50 in a space division method may include at least one of a disk unit 100 , a pocket unit 200 , a second rotating unit, and a first rotating unit.
  • One substrate 50 may be seated in the pocket portion 200 , and a plurality of pocket portions 200 may be provided in the disk portion 100 . Accordingly, the substrate 50 may be seated on the disk unit 100 as many as the number of pocket units 200 .
  • the pocket portion 200 on which the substrate 50 is seated may rotate, and the rotation of the pocket portion 200 includes the first rotation (A) and the second rotation (A). It may include rotation (B).
  • the first rotation unit may include a first rotation shaft 10 , and rotation of the first rotation shaft 10 may first rotate the pocket part 200 .
  • the second rotation unit may include a second rotation shaft 20 , and rotation of the second rotation shaft 20 may cause the pocket part 200 to rotate a second time.
  • the first rotation (A) of the pocket portion 200 is the rotation of the pocket portion 200 with the center of the pocket portion 200 as the rotational center in a plan view. .
  • the first rotation (A) may be a rotation of the pocket part 200 by 360 degrees or more.
  • the second rotation (B) of the pocket part 200 in comparison with the rotation of the pocket part 200 may be that the pocket part 200 rotates about a virtual rotation axis provided outside the pocket part 200 as a rotation center. .
  • the virtual rotation axis may be provided at the center of the chamber 60 or at the center of the disk unit 100 .
  • the second rotation part of the pocket part 200 may rotate the disk part 100 provided with the plurality of pocket parts 200 in order to orbit the pocket part 200 with the center of the disk part 100 as the rotation center.
  • the second rotation (B) of the pocket portion 200 may be referred to as a revolution that rotates around a virtual axis of rotation.
  • the second rotation unit may rotate the pocket unit 200 a second time (B).
  • the first rotation (A) and the second rotation (B) of the pocket portion 200 may have different speeds and directions, respectively, by the control unit.
  • the user can adjust the direction and speed of the first rotation shaft 10 and the second rotation shaft 20 through the control unit, and by monitoring the result of each substrate 50 processing, the first rotation shaft 10 and the second rotation shaft ( 20) direction and speed can be determined.
  • the substrate 50 processing apparatus includes a chamber 60 , a disk part 100 installed in the chamber 60 to support at least one substrate 50 , a source gas, a reaction gas, and a purge gas to the disk part 100 . It may include a gas injection unit (not shown) for spraying different gas injection areas on the upper surface.
  • the chamber 60 may provide a reaction space for a substrate 50 processing process, for example, an ALD process.
  • the disk unit 100 may be rotatably installed on the inner bottom surface of the chamber 60 .
  • a plurality of substrates 50 centered on the circumference of the disk portion 100 may be arranged at regular intervals along the circumference of the disk unit 100 .
  • the disk unit 100 is rotated in a predetermined direction (eg, clockwise) according to the rotation of the rotation shaft to rotate the substrate 50 , thereby moving the substrate 50 in a predetermined order, and the substrate 50 .
  • the silver may be sequentially exposed to the source gas, the purge gas, and the reactant gas.
  • the ALD deposition film may be a specific film targeted through a chemical substitution reaction between a source gas and a reactant gas.
  • the purge gas may be injected after the source gas and the reactive gas are injected.
  • the purge gas may be divided into a first purge gas for a purge gas injected after the source gas and a second purge gas for a purge gas injected after the reaction gas.
  • the substrate 50 is sequentially exposed to each of the source gas, the purge gas, and the reactant gas according to the rotation of the disk unit 100 , and as a result, a single-layer or multi-layer thin film by an Atomic Layer Deposition (ALD) process on the substrate 50 . This can be deposited.
  • ALD Atomic Layer Deposition
  • the source gas is injected to the substrate 50 facing the source gas region, the purge gas is injected to the substrate 50 facing the purge gas region, and the reactive gas is injected to the substrate 50 facing the reactive gas region.
  • the space division method may allow different gas processes to be simultaneously performed on a plurality of substrates 50 .
  • the substrate 50 may be processed in the chamber 60 by at least one of a thin film deposition process of the substrate 50 , a cleaning process of the substrate 50 , and an etching process of the substrate 50 .
  • the thin film be deposited with a uniform thickness over the entire area on the substrate 50 such as a wafer or a PCB disposed in the chamber 60 .
  • the substrate 50 such as a wafer or a PCB disposed in the chamber 60
  • the thin film thickness of the specific substrate 50 and the thin film thickness of the other substrate 50 are uniform.
  • the distribution range of the raw material diffused in the chamber 60 may be uniform. However, in reality, it may be difficult to evenly distribute the raw material in the chamber 60 . As a result, since the distribution of the raw material in the chamber 60 is non-uniform, it may be difficult to uniformly perform a film process such as deposition and etching on the substrate 50 .
  • the raw material tends to be centrally distributed in the center of the chamber 60 in a planar view. Accordingly, on the basis of one substrate 50 , the processing of the region adjacent to the center of the chamber 60 may be performed more intensely than the processing of the region adjacent to the edge of the chamber 60 .
  • the thin film thickness of the first substrate 50 and the thin film thickness of the second substrate 50 are different due to non-uniform distribution of raw materials.
  • the present invention is to make the processing state of each region of a single substrate 50 uniform regardless of non-uniform distribution of raw materials. In addition, it is to make the processing state of the plurality of substrates 50 to be processed simultaneously to each other uniform.
  • a pocket 200 may be provided to simultaneously process a plurality of substrates 50 .
  • a plurality of pocket portions 200 may be installed on the disk portion 100 , and the substrate 50 may be seated on the pocket portion 200 .
  • the disk part 100 or the pocket part 200 can rotate during the process and in order for the substrate 50 to be stably seated on the pocket part 200, the pocket part 200 has a seating surface 210 or a seating jaw ( 220) may be provided.
  • the seating surface 210 may also have a circular shape having the same size as that of the substrate 50 .
  • the seating jaw 220 may be formed to face the circumference of the seating surface 210 and may have a predetermined height. The height of the seating ridge 220 may be equal to or greater than the thickness of the substrate 50 .
  • the process may proceed in a state where the substrate 50 is stably seated on the plurality of pockets 200 provided in the disk unit 100 by the seating surface 210 or the seating ridge 220 .
  • the substrate 50 may be seated on the pocket unit 200 or the substrate 50 may be separated from the pocket unit 200, in which case the lift The unit 300 can ascend and descend.
  • the substrate 50 may face the mounting surface 210 in parallel to the substrate 50 , in which case the substrate 50 is supported by the support unit 310 . ) and may be in contact with the seating surface 210 .
  • the support part 310 When the substrate 50 is seated, in order for the substrate 50 and the seating surface 210 to face in parallel, the support part 310 needs to descend lower than the horizontal height of the seating surface 210, and the lowered support part 310 A space for the lift groove 330 may be provided.
  • a state in which the lift unit 300 is maximally descended may be a state in which the substrate 50 is seated on the pocket unit 200 .
  • the support unit 310 When the lift unit 300 is lowered to the maximum, the support unit 310 may be seated in the lift groove 330 , and the substrate 50 may be seated on the seating surface 210 . As long as the substrate 50 does not completely separate from the pocket unit 200 for another process, the substrate 50 may remain in contact with the support unit 310 when the lift unit 300 is lifted.
  • the substrate 50 can be stably seated in the pocket portion 200 by the seating surface 210 and the lift groove 330, even during the first and second rotations of the pocket portion 200. 50), the stable membrane process can be performed.
  • a suction hole 332 may be formed in the lift groove 330 .
  • An air channel 334 for applying a vacuum to the suction hole 332 may be formed in the pocket portion 200 or the disk portion 300 .
  • the suction hole 332 may suck the support 310 toward the lift groove 330 .
  • the support part 310 may include an upper surface 311 of the support part facing the substrate 50 and a lower surface 312 of the support part seated in the lift groove 330 .
  • the upper surface 311 of the support part may protrude more than the lower surface 312 of the support part.
  • the upper surface 311 of the support part protruding from the lower surface 312 of the support part may cover a gap between the lift groove 330 and the support part 310 .
  • the substrate 50 can be strongly sucked into the lift groove 330 by the suction hole 332 of the lift groove 330 , and in addition, the deposition film component is lifted with the support portion 310 by the upper surface 311 of the support portion. Penetration into the gap space between the grooves 330 can be prevented as much as possible.
  • the center of the pocket portion 200 formed in plurality in the disk portion 100 may be different from the center of the chamber 60 in plan view. Accordingly, the pocket 200 and one side of the substrate 50 seated on the pocket 200 may be disposed adjacent to the center of the chamber 60 , and the other side may be disposed adjacent to the edge of the chamber 60 . .
  • one side of the substrate 50 closer to the center of the disk part 100 is deposited on one side of the substrate 50 more than the other side of the substrate 50 closer to the edge of the disk part 100 .
  • the component density may be relatively higher, and even within a single substrate 50, there may be a problem of non-uniformity of the process for the film.
  • the first rotation unit may be used to prevent non-uniform processing of the substrate 50 .
  • the entire area of the substrate 50 is can be treated uniformly.
  • a thin film having a uniform thickness may be deposited on both the one side and the other side of the substrate 50 .
  • a thin film may be deposited on the substrate 50 with a constant thickness without division of regions.
  • the entire area of the substrate 50 may be etched to a uniform depth.
  • the substrate 50 may maintain a state parallel to the seating surface 210 by the lift part 300 having a 'T' shape of a side cross-section. That is, it may be seated on the pocket portion 200 or spaced apart from the pocket portion 200 without a tilting phenomenon.
  • the concentration of the raw material at the first position and the concentration of the raw material at the second position are mutually can be different.
  • the thickness of the thin film deposited on the first substrate 50 and the thickness of the thin film deposited on the second substrate 50 may be different from each other.
  • the apparatus for processing the substrate 50 of the present invention may further include a second rotation unit.
  • the second rotation of the pocket part 200 may be rotation of the pocket part 200 based on the second rotation shaft 20 provided outside the pocket part 200 .
  • the second rotation shaft 20 may be provided at the center of the chamber 60 or at the center of the disk unit 100 .
  • the second rotating unit may change the central position of the pocket unit 200 while moving the disk unit 100 in which the pocket unit 200 is installed. For example, when the first substrate 50 and the second substrate 50 alternately pass through the first position and the second position by the second rotation unit, the first substrate 50 and the second substrate 50 The thin film thickness can be uniform.
  • the overall yield can be remarkably improved.
  • the first rotating unit and the second rotating unit may be driven independently. Accordingly, a control unit for separately controlling the first rotating unit and the second rotating unit may be provided.
  • the user After confirming the film treatment result of the substrate 50 , the user can post-process the first speed V1 of the first rotating unit and the second speed V2 of the second rotating unit by using the control unit.
  • the movement of the disk unit 100 may be restricted by the first rotating unit.
  • the first rotating unit may first rotate the pocket unit 200 while moving together with the disc unit 100 .
  • the first rotating part includes a first motor M1 for rotating the first rotating shaft 10 , and a first rotating shaft 10 and a pocket part 200 so that the pocket part 200 first rotates by the rotation of the first rotating shaft 10 .
  • a gear, a chain, a magnetic type chain, etc. linked to may be provided.
  • the first rotation unit includes a pocket gear 14 connected to the pocket unit 200 , a main gear 12 linked to the pocket gear 14 , a first rotating shaft 10 connected to the main gear 12 , a first A first motor M1 for rotating the rotating shaft 10 may be provided.
  • the first rotation shaft 10 may be formed at the center of the pocket portion 200 .
  • the first rotation shaft 10 connected to the motor shaft of the first motor may rotate.
  • the main gear 12 may rotate by the rotation of the first rotating shaft 10
  • the pocket gear 14 linked to the main gear 12 may rotate.
  • the pocket part 200 may first rotate.
  • the first rotation shaft 10 connected to the motor shaft of the first motor rotates while the pocket part 200 is attached to the disk part 100 . can be rotated relative to
  • a second rotation shaft 20 connected to the disk unit 100 and a second motor M2 for rotating the second rotation shaft 20 may be provided in the second rotation unit.
  • the first motor M1 and the second motor M2 may be installed outside the chamber 60 . Accordingly, the first rotation shaft 10 connected to the first motor M1 and the second rotation shaft 20 connected to the second motor M2 may pass through the chamber 60 .
  • first rotation shaft 10 and the second rotation shaft 20 are coaxially disposed.
  • the first rotation shaft 10 may be formed in a hollow pipe shape.
  • the second rotation shaft 20 may be rotatably inserted into the hollow of the first rotation shaft 10 .
  • the first rotation shaft 10 may penetrate the chamber 60 .
  • the second rotation shaft 20 is formed in a hollow pipe shape and the first rotation shaft 10 is inserted into the hollow of the second rotation shaft 20 may be possible.
  • the pocket unit 200 and the disk unit 100 may rotate at different rotation speeds by the first motor M1 and the second motor M2 that are separately controlled by the controller, and may rotate in the same direction or in different directions. have.
  • a lift unit 300 for elevating the substrate 50 may be provided.
  • the substrate 50 may be spaced apart from the seating surface 210 of the pocket part 200 when the lift part rises, and may be seated on the seating surface 210 when the lift part 300 descends.
  • a thin film may be deposited on the substrate 50 seated on the seating surface 210 , and in this case, a portion of the thin film may also be deposited on the pocket 200 . Accordingly, the substrate 50 and the pocket portion 200 may be partially bonded by the thin film, and the corresponding bonding may be separated by the lift.
  • the substrate 50 is easily damaged by the lift pressure applied to break the adhesion.
  • a phenomenon that the substrate 50 is tilted and dropped from the lift may occur in the process of peeling the adhesive and in the process of lifting and lowering.
  • the lift unit 300 may have a special structure.
  • a support part 310 extending parallel to the seating surface 210 of the pocket part 200 may be provided on the lift part 300 so that the pressure applied to the substrate 50 is dispersed by a process of peeling the adhesive. .
  • the support part 310 may be in surface contact with the substrate 50 in parallel, and the pressure applied to the substrate 50 may be evenly distributed, and the inclination of the substrate 50 may be reliably prevented in the elevating process. have.
  • the support 310 may be parallel to the seating surface 210 of the pocket 200 .
  • a shaft part 320 extending downward from the center of the support part 310 may be provided on the lift part 300 so that the support part 310 is parallel to the seating surface 210 .
  • the extension direction of the shaft part 320 may be the same as the elevation direction of the support part 310 .
  • the shaft part 320 may be installed through the through hole 230 formed in the disk part 100 .
  • the through hole 230 may extend from the upper surface to the lower surface of the disk unit 100 .
  • the through hole 230 may be located in the center of the disk unit 100 .
  • the shaft unit 320 may be guided upward and downward by the through hole 230 of the disk unit 100 .
  • the shaft portion 320 guided by the through hole 230 is prevented from inclining differently from the lifting direction, and the support portion 310 connected to the shaft portion 320 is always parallel to the seating surface 210 of the pocket portion 200 . can maintain one state.
  • a lift driving unit 340 for pushing the shaft unit 320 upward or pulling downwards may be provided in the chamber 60 .
  • the first rotation unit may be disposed to face the bottom surface of the disk unit 100 .
  • the lift driving unit 340 may maintain a downwardly descending state to escape from the first rotating unit.
  • the lift unit 300 may be in a lowered state by its own weight.
  • the lift driving unit 340 may rise and push the shaft unit 320 upward.
  • the pocket portion 200 may be installed on the upper portion of the disk portion 100 to face the through hole 230 of the disk portion 100 , and to the pocket gear 14 through the through hole 230 of the disk portion 100 . can be connected At this time, a bearing allowing rotation of the pocket gear 14 or the pocket portion 200 may be interposed between the pocket gear 14 and the through hole 230 or between the pocket portion 200 and the through hole 230 . .
  • a heating means 30 may be provided in the apparatus for processing the substrate 50 .
  • the heating means 30 may be installed in the chamber 60 and heated to a high temperature to induce the raw material to be processed on the substrate 50 .
  • the heating means 30 may be installed between the first rotating unit and the bottom surface of the chamber 60 at a position spaced apart from the first rotating unit.
  • the heating means 30 may extend from at least one outer circumferential surface of the disk part 100 to the second rotation shaft 20 . According to this embodiment, since each pocket part 200 can be uniformly heated by the heating means 30 by the rotating disk part 100 , processing uniformity for a single substrate 50 and a plurality of substrates 50 . The processing uniformity of the liver can be improved.
  • the shape of the lift groove 330 may be determined according to the shape of the support part 310 .
  • the substrate 50 may contact the seating surface 210 .
  • the substrate 50 may contact the seating surface 210 and the support part 310 at the same time.
  • the shape of the lift groove 330 may be sufficient if the seating surface 210 and the upper surface of the support part 310 are parallel to each other when the lift part 300 descends.
  • an empty space may be formed between the seated substrate 50 and the pocket part 200 .
  • the empty space may cause vibration due to the process itself such as rotation.
  • the seated substrate 50 may come in contact with the seating surface 210 , the support 310 , and the empty space, which may be an increase in factors that may cause a temperature gradient compared to the case in which there is no empty space. Therefore, the lift groove 330 may be formed in the same shape as the support part 310 .
  • the substrate 50 comes into contact with two different materials, the seat surface 210 and the support part 310 , so that the temperature of the substrate 50 is non-uniform. can do.
  • the support part 310 may be located in the center of the pocket part 200 .
  • a virtual vertical line passing through the center of the pocket portion 200 is referred to as a first position
  • at least one of the center of the pocket, the support portion 310, the shaft portion 320, and the through hole 230 may be provided at the first position. have.
  • the heating means 30 heats the pocket part 200 in the lower part of the disk part 100 , the heat received from the heating means 30 may reach the center of the substrate 50 less.
  • the temperature of the central portion of the substrate 50 may be measured to be lower than the temperature of the edge of the substrate 50 .
  • the temperature gradient of the substrate 50 to be processed may be affected by the support part 310 , and the film deposited on the substrate 50 may be uniformly processed only when the influence of the temperature gradient by the support part 310 is lowered.
  • the shape of the support 310 in contact with the substrate 50 may be selected such that the area in contact with the substrate 50 is minimized. .
  • Such a shape may have to satisfy the condition of not giving an impact that causes defects to the substrate 50 during the lifting operation of the substrate 50 by the lift unit 300 .
  • the support part 310 may be provided in a circular shape, and this may be referred to as a first type.
  • the lift groove 330 may also be provided in a circular shape, and the radius of the lift groove 330 may be larger than the radius of the support part 310 .
  • the thickness of the support part 310 may be the same as the thickness of the lift groove 330 .
  • the support 310 may be provided in a tripod shape, and this may be referred to as a second type.
  • the second type of support 310 may include a support piece 316 and a central portion 314 .
  • the support piece 316 may be provided in plurality, for example, the support piece 316 may be provided in three.
  • the support 310 may be in surface contact with the substrate 50 in a horizontal and parallel manner.
  • the three support pieces 316 may be the most stable and minimal way to stably support a two-dimensional plane. That is, four or more support pieces 316 may be provided, but an increase in the number of support pieces 316 may mean an increase in the area of the support part 310 in contact with the substrate 50 . Accordingly, if not essential for structural stability, three support pieces 316 may be sufficient.
  • the support pieces 316 may be arranged at an angle of 120 degrees in a plane view.
  • the support piece 316 may extend radially from the central portion 314 .
  • One end of each support piece 316 may be connected to the central portion 314 .
  • the lift groove 330 may be formed in the same shape as the second type of support 310 .
  • the area of the support portion 310 of the second type may be significantly reduced than that of the first type.
  • the second type may have a relatively reduced volume of the pocket portion 200 than that of the first type, and the temperature gradient of the substrate 50 according to the second type may be significantly reduced than that of the first type.
  • a lower surface of the central portion 314 may face the shaft portion 320 , and a decut portion 320a may be provided on one side of the shaft portion 320 .
  • the decut part 320a may prevent the support part 310 from rotating when the pocket part 200 rotates according to a change in the shape of the support part 310 in which the contact area with the substrate 50 is reduced.
  • the shaft portion 320 may be vertically connected to the lower surface of the central portion 314 , and the decut portion 320a may also extend vertically along the shaft portion 320 . If necessary according to the design of the support part 310, the decut part 320a may be additionally provided.
  • the average temperature of the substrate with respect to the temperature set by the user may be similar to the first type and the second type.
  • the temperature difference in the horizontal direction of the second type may be smaller than that of the first type.
  • the pocket unit 200 when the pocket unit 200 rotates and revolves at the same time, compared to the case where the pocket unit 200 only revolves, the thickness deviation of the deposition film is reduced and the uniformity is improved.
  • the deviation and uniformity of the deposition film of the second type may be reduced and improved compared to that of the first type. This is because in the shape of the support part 310, the area of the support part 310 in direct contact with the substrate 50 is much reduced in the second type than the first type, so that the temperature gradient of the second type can be improved than that of the first type. .
  • the etching process may be a process of removing portions other than a necessary circuit pattern, and the wet etching rate may indicate the degree of etching.
  • wet etching may perform isotropic etching. That is, excessive etching of the wet etching may cause unnecessary etching that penetrates into the lower portion of the circuit pattern of the substrate 50 , which may be referred to as an undercut phenomenon.
  • the undercut phenomenon of the first type may also be improved compared to that of the first type.

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Abstract

The present invention may comprise: a disc portion arranged in a chamber for processing a substrate; a plurality of pocket portions which are provided on the disc portion so that substrates are respectively seated thereon and which are arranged equiangularly with respect to the center of the disc portion; and a lift portion for moving up/down the substrate. The lift portion is provided for each of the pocket portions and can move up and down at the center of the pocket portion.

Description

리프트부를 구비한 기판 처리 장치Substrate processing apparatus provided with a lift unit
본 발명은 기판에 박막을 증착하거나 기판을 세척 또는 식각하는 기판 처리 장치에 관한 것이다.The present invention relates to a substrate processing apparatus for depositing a thin film on a substrate or cleaning or etching a substrate.
복수의 기판이 배치된 플레이트에 따르면, 챔버 내에서 이루어지는 기판의 박막 증착, 식각 등이 복수의 기판에 대해서 복수로 이루어질 수 있다.According to the plate on which the plurality of substrates are disposed, thin film deposition and etching of the substrates performed in the chamber may be performed with respect to the plurality of substrates.
그러나, 챔버 내에 존재하는 원료의 확산 범위 또는 분포 범위, 기판의 온도가 균일하지 못하므로, 플레이트 상에 배치된 각 기판의 처리 상태가 불균일한 문제가 발생하기 쉽다. However, since the diffusion range or distribution range of the raw material present in the chamber and the temperature of the substrate are not uniform, it is easy to cause a problem that the processing state of each substrate disposed on the plate is not uniform.
이와 같은 박막 두께의 불균일로 인해 단일 기판 상에 제작된 소자의 전기적 특성 편차가 커지고, 수율이 저하되는 문제가 발생될 수 있다. Due to the non-uniformity of the thin film thickness, variations in electrical characteristics of devices fabricated on a single substrate may increase, and a problem of a decrease in yield may occur.
본 발명은 복수의 기판을 동시에 고르게 처리할 수 있는 기판 처리 장치로서, 기판을 지지하고 승강 가능한 리프트부가 마련될 수 있다. The present invention is a substrate processing apparatus capable of simultaneously and evenly processing a plurality of substrates, and may be provided with a lift unit capable of supporting the substrate and elevating the substrate.
기판 처리 공정중 기판은 리프트부와 직접 접촉하기에, 리프트부의 형상에 따라 기판의 온도 구배는 달라질 수 있고, 기판에 증착되는 박막의 균일도는 영향을 받을 수 있다.Since the substrate is in direct contact with the lift part during the substrate processing process, the temperature gradient of the substrate may vary depending on the shape of the lift part, and the uniformity of the thin film deposited on the substrate may be affected.
본 발명은 기판 처리를 위해 챔버 내에 배치되는 디스크부, 디스크부에 복수로 마련되고 각각의 기판이 안착되며 디스크부의 중심에 대하여 등각도로 배열되는 포켓부, 기판을 승강시키는 리프트부를 포함할 수 있다. The present invention may include a disk unit disposed in a chamber for processing a substrate, a pocket unit provided in plurality in the disk unit, on which each substrate is seated, and arranged at an equal angle with respect to the center of the disk unit, and a lift unit for elevating the substrate.
중앙부의 중심은 포켓부의 중심과 일치하며, 지지편의 일단은 중앙부와 연결될 수 있고, 지지편은 중앙부의 중심을 기준으로 등각도로 배열되며 방사형으로 연장될 수 있다. The center of the central portion coincides with the center of the pocket portion, and one end of the support piece may be connected to the center portion, and the support piece may be arranged at an equal angle with respect to the center of the central portion and may extend radially.
포켓부는 안착면과 안착턱을 포함할 수 있다. 안착면은 기판이 안착될 수 있고, 기판과 동일한 형상일 수 있다. 안착턱은 안착면의 둘레를 따라 대면되게 형성될 수 있고, 안착턱은 안착면에 대해 수직 상향으로 돌출될 수 있다. The pocket portion may include a seating surface and a seating sill. The seating surface may seat the substrate and may have the same shape as the substrate. The seating jaw may be formed to face along the circumference of the seating surface, and the seating jaw may protrude vertically upward with respect to the seating surface.
리프트부는 지지부와 연결되고 지지부와 수직하는 방향으로 길이가 연장되는 샤프트부를 포함할 수 있다.The lift part may include a shaft part connected to the support part and extending in length in a direction perpendicular to the support part.
포켓부의 회전시 지지부의 동작을 제한하여 리프트부를 포켓부에 고정시키는 디컷부가 샤프트부의 일측에 마련될 수 있다. A decut portion for fixing the lift portion to the pocket portion by limiting the operation of the support portion during rotation of the pocket portion may be provided on one side of the shaft portion.
디컷부는 샤프트부의 일부를 축방향으로 절개한 것으로서, 샤프트부의 길이 방향을 따라 연장될 수 있다. The decut part is a part of the shaft part cut in the axial direction, and may extend along the length direction of the shaft part.
디스크부의 회전시 디스크부와 이격되는 리프트 구동부가 마련될 수 있다. 리프트 구동부는 디스크부가 정지한 상태에서 포켓부의 통공에 진입되고 샤프트부의 단부를 밀어서 리프트부를 포켓부로부터 상승시킬 수 있다. A lift driving unit spaced apart from the disc unit may be provided when the disc unit is rotated. The lift driving unit enters the through hole of the pocket unit in a state where the disc unit is stopped and pushes the end of the shaft unit to raise the lift unit from the pocket unit.
리프트부의 접촉하는 기판의 온도 구배는 증착하려는 박막의 균일도에 영향을 미칠 수 있고, 이러한 온도 구배를 감소 시킴으로써 박막의 균일도를 개선할 수 있다. The temperature gradient of the substrate in contact with the lift part may affect the uniformity of the thin film to be deposited, and by reducing the temperature gradient, the uniformity of the thin film may be improved.
공간 분할 PEALD 박막 증착시, 챔버 구조상 리프트부는 기판이 삽입되는 포켓부의 정중앙에 위치할 수 있다. 기판의 중앙의 온도가 주변 부분의 온도보다 낮을 수 있다. 이를 개선하기 위해, 기판과 접촉하는 리프트부의 지지부는 최소의 면적을 가지는 형상으로 마련될 수 있다.When depositing the space-division PEALD thin film, the lift part may be located at the exact center of the pocket part into which the substrate is inserted due to the structure of the chamber. The temperature of the center of the substrate may be lower than the temperature of the peripheral portion. In order to improve this, the support portion of the lift unit in contact with the substrate may be provided in a shape having a minimum area.
안착된 기판은 지지부 및 포켓부의 안착면과 접촉할 수 있다. 디스크부와 챔버면 사이에 가열 수단이 구비될 수 있고, 가열 수단에 의한 열기는 디스크부, 포켓부를 통해 기판에 전달될 수 있다. The seated substrate may be in contact with the support portion and the seating surface of the pocket portion. A heating means may be provided between the disk portion and the chamber surface, and the heat generated by the heating means may be transferred to the substrate through the disk portion and the pocket portion.
기판은 공정시 다른 종류의 물질과 접촉할 수 있고, 이로인해 온도 구배가 발생할 수 있다. 따라서, 기판은 접촉하는 두 종류의 물질중 하나의 물질의 접촉 면적을 최소화시켜 기판의 온도 구배를 낮출 수 있다. The substrate may come into contact with different types of materials during processing, which may result in temperature gradients. Accordingly, the substrate can lower the temperature gradient of the substrate by minimizing the contact area of one of the two types of materials in contact.
즉, 리프트부의 지지부의 면적을 안정적인 기판 지지를 위한 최소한의 구조를 남기고 최소화할 수 있다. 중앙으로부터 방사형으로 연장되는 세 개의 지지편을 가지는 지지부의 형상은 이러한 구조를 위한 일 실시 예일 수 있다. That is, the area of the support part of the lift part may be minimized while leaving a minimum structure for stable substrate support. The shape of the support part having three support pieces extending radially from the center may be an example for such a structure.
공간 분할형 PEALD로 기판을 처리하는 경우, 기판은 포켓부의 중앙을 중심으로 한 제1 회전, 디스크부의 중앙을 중심으로 한 제2 회전을 할 수 있다. 제1 회전 및 제2 회전을 통해 기판은 균일한 온도 구배를 가질 수 있다. When the substrate is processed by the space division type PEALD, the substrate may perform a first rotation about the center of the pocket portion and a second rotation about the center of the disk portion. Through the first rotation and the second rotation, the substrate may have a uniform temperature gradient.
결과적으로 기판은 제1 회전, 제2 회전, 지지부의 최소 면적 형상중 적어도 어느 하나에 의해 온도 구배가 개선될 수 있고, 이로 인해 균등한 막 처리 공정이 진행될 수 있다. As a result, the temperature gradient of the substrate may be improved by at least one of the first rotation, the second rotation, and the shape of the minimum area of the support part, and thus an even film treatment process may be performed.
도 1은 본 발명의 기판 처리 장치의 측단면도이다.1 is a side cross-sectional view of a substrate processing apparatus of the present invention.
도 2는 본 발명의 기판이 포켓부에 안착한 상태의 디스크부의 평면도이다.Figure 2 is a plan view of the disk portion in a state in which the substrate of the present invention is seated in the pocket portion.
도 3은 본 발명의 리프트부의 일 실시 예를 도시한 것이다.Figure 3 shows an embodiment of the lift unit of the present invention.
도 4는 도 3의 리프트부의 하부 사시도이다.FIG. 4 is a lower perspective view of the lift unit of FIG. 3 ;
도 5는 도 4의 리프트부의 저면도이다.FIG. 5 is a bottom view of the lift unit of FIG. 4 .
공간 분할 방식으로 기판(50)을 처리하는 본 발명의 기판(50) 처리 장치는 디스크부(100), 포켓부(200), 제2 회전부 및 제1 회전부중 적어도 어느 하나를 포함할 수 있다.The apparatus for processing the substrate 50 of the present invention that processes the substrate 50 in a space division method may include at least one of a disk unit 100 , a pocket unit 200 , a second rotating unit, and a first rotating unit.
포켓부(200)에는 하나의 기판(50)이 안착될 수 있고, 디스크부(100)에는 복수의 포켓부(200)가 마련될 수 있다. 따라서, 기판(50)은 포켓부(200)의 개수만큼 디스크부(100)에 안착될 수 있다. One substrate 50 may be seated in the pocket portion 200 , and a plurality of pocket portions 200 may be provided in the disk portion 100 . Accordingly, the substrate 50 may be seated on the disk unit 100 as many as the number of pocket units 200 .
기판(50)의 증착, 세척, 식각 등의 공정시, 기판(50)이 안착된 포켓부(200)는 회전할 수 있고, 포켓부(200)의 회전은 제1 회전(A), 제2 회전(B)을 포함할 수 있다. During processes such as deposition, cleaning, and etching of the substrate 50 , the pocket portion 200 on which the substrate 50 is seated may rotate, and the rotation of the pocket portion 200 includes the first rotation (A) and the second rotation (A). It may include rotation (B).
제1 회전부는 제1 회전축(10)을 포함할 수 있고, 제1 회전축(10)의 회전은 포켓부(200)를 제1 회전 시킬 수 있다. 제2 회전부는 제2 회전축(20)을 포함할 수 있고, 제2 회전축(20)의 회전은 포켓부(200)를 제2 회전 시킬 수 있다. The first rotation unit may include a first rotation shaft 10 , and rotation of the first rotation shaft 10 may first rotate the pocket part 200 . The second rotation unit may include a second rotation shaft 20 , and rotation of the second rotation shaft 20 may cause the pocket part 200 to rotate a second time.
포켓부(200)의 제1 회전(A)은 평면상으로 포켓부(200)의 중심을 회전 중심으로 하여 포켓부(200)가 회전하는 것으로 이하에서는 포켓부(200)의 자전이라 할 수 있다. 제1 회전(A)은 포켓부(200)가 360도 이상 회전하는 것일 수 있다. The first rotation (A) of the pocket portion 200 is the rotation of the pocket portion 200 with the center of the pocket portion 200 as the rotational center in a plan view. . The first rotation (A) may be a rotation of the pocket part 200 by 360 degrees or more.
포켓부(200)의 자전과 대비하여 포켓부(200)의 제2 회전(B)은, 포켓부(200) 외부에 마련된 가상의 회전축을 회전 중심으로 포켓부(200)가 회전하는 것일 수 있다. 가상의 회전축은 챔버(60)의 중심 또는 디스크부(100)의 중심에 마련될 수 있다. The second rotation (B) of the pocket part 200 in comparison with the rotation of the pocket part 200 may be that the pocket part 200 rotates about a virtual rotation axis provided outside the pocket part 200 as a rotation center. . The virtual rotation axis may be provided at the center of the chamber 60 or at the center of the disk unit 100 .
포켓부(200)의 제2 회전부는 포켓부(200)를 공전시키기 위해 복수의 포켓부(200)가 설치된 디스크부(100)를 디스크부(100)의 중심을 회전 중심으로 하여 회전시킬 수 있다. 포켓부(200)의 제2 회전(B)은 가상의 회전축을 중심으로 회전하는 공전이라 할 수 있다. 제2 회전부는 포켓부(200)를 제2 회전(B)시킬 수 있다.The second rotation part of the pocket part 200 may rotate the disk part 100 provided with the plurality of pocket parts 200 in order to orbit the pocket part 200 with the center of the disk part 100 as the rotation center. . The second rotation (B) of the pocket portion 200 may be referred to as a revolution that rotates around a virtual axis of rotation. The second rotation unit may rotate the pocket unit 200 a second time (B).
포켓부(200)의 제1 회전(A)과 제2 회전(B)은 제어부에 의해서 각각 다른 속도와 회전 방향을 가질 수 있다. 사용자는 제어부를 통해 제1 회전축(10) 및 제2 회전축(20)의 방향과 속도를 조절할 수 있고, 각각의 기판(50) 처리의 결과를 모니터링하여 제1 회전축(10) 및 제2 회전축(20)의 방향과 속도를 결정할 수 있다. The first rotation (A) and the second rotation (B) of the pocket portion 200 may have different speeds and directions, respectively, by the control unit. The user can adjust the direction and speed of the first rotation shaft 10 and the second rotation shaft 20 through the control unit, and by monitoring the result of each substrate 50 processing, the first rotation shaft 10 and the second rotation shaft ( 20) direction and speed can be determined.
기판(50) 처리 장치는 챔버(60), 챔버(60)에 설치되어 적어도 하나의 기판(50)을 지지하는 디스크부(100), 소스 가스, 반응 가스, 및 퍼지 가스를 디스크부(100)상의 각기 다른 가스 분사 영역에 분사하는 가스 분사부(미도시)를 포함할 수 있다. The substrate 50 processing apparatus includes a chamber 60 , a disk part 100 installed in the chamber 60 to support at least one substrate 50 , a source gas, a reaction gas, and a purge gas to the disk part 100 . It may include a gas injection unit (not shown) for spraying different gas injection areas on the upper surface.
챔버(60)는 기판(50) 처리 공정, 예를 들어 ALD 공정을 위한 반응 공간을 제공할 수 있다. 디스크부(100)는 챔버(60)의 내부 바닥면에 회전 가능하게 설치될 수 있다. The chamber 60 may provide a reaction space for a substrate 50 processing process, for example, an ALD process. The disk unit 100 may be rotatably installed on the inner bottom surface of the chamber 60 .
공간 분할 방식으로 ALD 공정을 수행하는 본 발명의 기판(50) 처리 공정의 생산성 향상을 위해, 디스크부(100)가 원형인 경우, 디스크부(100) 원주상에 중심을 둔 복수의 기판(50)이 디스크부(100) 원주를 따라 일정 간격으로 배치될 수 있다. In order to improve the productivity of the substrate 50 processing process of the present invention for performing the ALD process in the space division method, when the disk portion 100 is circular, a plurality of substrates 50 centered on the circumference of the disk portion 100 ) may be arranged at regular intervals along the circumference of the disk unit 100 .
디스크부(100)는 회전축의 회전에 따라 소정 방향(예를 들어, 시계 방향)으로 회전되어 기판(50)을 회전시킴으로써, 정해진 순서에 따라 기판(50)을 이동시킬 수 있고, 기판(50)은 소스 가스, 퍼지 가스, 및 반응 가스에 순차적으로 노출될 수 있다. The disk unit 100 is rotated in a predetermined direction (eg, clockwise) according to the rotation of the rotation shaft to rotate the substrate 50 , thereby moving the substrate 50 in a predetermined order, and the substrate 50 . The silver may be sequentially exposed to the source gas, the purge gas, and the reactant gas.
ALD 증착막은 소스 가스와 반응 가스의 화학 치환 반응을 통해 목표한 특정 막일 수 있다.The ALD deposition film may be a specific film targeted through a chemical substitution reaction between a source gas and a reactant gas.
소스 가스 및 반응 가스의 원자막 한층만 순차대로 적층되면 충분할 수 있고, 소스 가스 및 반응 가스의 분사후 퍼지 가스가 분사될 수 있다. It may be sufficient if only one layer of the atomic film of the source gas and the reactive gas is sequentially stacked, and the purge gas may be injected after the source gas and the reactive gas are injected.
퍼지 가스는 소스 가스후 분사되는 퍼지 가스를 제1 퍼지 가스, 반응 가스후 분사되는 퍼지 가스를 제2 퍼지 가스로 구별될 수 있다. The purge gas may be divided into a first purge gas for a purge gas injected after the source gas and a second purge gas for a purge gas injected after the reaction gas.
기판(50)은 디스크부(100)의 회전에 따라 소스 가스와 퍼지 가스 및 반응 가스 각각에 순차적으로 노출되고, 이로 인해 기판(50) 상에는 ALD(Atomic Layer Deposition) 공정에 의한 단층 또는 복층의 박막이 증착될 수 있다. The substrate 50 is sequentially exposed to each of the source gas, the purge gas, and the reactant gas according to the rotation of the disk unit 100 , and as a result, a single-layer or multi-layer thin film by an Atomic Layer Deposition (ALD) process on the substrate 50 . This can be deposited.
소스 가스는 소스 가스 영역에 대면되는 기판(50)에 분사되고, 퍼지 가스는 퍼지 가스 영역에 대면되는 기판(50)에 분사되며, 반응 가스는 반응 가스 영역에 대면되는 기판(50)에 분사될 수 있다. The source gas is injected to the substrate 50 facing the source gas region, the purge gas is injected to the substrate 50 facing the purge gas region, and the reactive gas is injected to the substrate 50 facing the reactive gas region. can
공간 분할 방식은 여러 장의 기판(50)에 대하여 각기 다른 가스 공정이 동시에 수행되도록 할 수 있다. The space division method may allow different gas processes to be simultaneously performed on a plurality of substrates 50 .
챔버(60) 내에서 기판(50)의 박막 증착 공정, 기판(50)의 세척 공정, 기판(50)의 식각 공정 중 적어도 하나에 의해 기판(50)이 처리될 수 있다.The substrate 50 may be processed in the chamber 60 by at least one of a thin film deposition process of the substrate 50 , a cleaning process of the substrate 50 , and an etching process of the substrate 50 .
수율 개선을 위해 챔버(60) 내에 배치된 웨이퍼, PCB 등의 기판(50)에는 박막이 전영역에 걸쳐 균일한 두께로 증착되는 것이 좋을 수 있다. 또한, 챔버(60) 내에 복수의 기판(50)이 배치된 경우, 특정 기판(50)의 박막 두께와 다른 기판(50)의 박막 두께도 균일한 것이 좋을 수 있다. In order to improve the yield, it may be preferable that the thin film be deposited with a uniform thickness over the entire area on the substrate 50 such as a wafer or a PCB disposed in the chamber 60 . In addition, when a plurality of substrates 50 are disposed in the chamber 60 , it may be preferable that the thin film thickness of the specific substrate 50 and the thin film thickness of the other substrate 50 are uniform.
박막 증착을 포함한 기판(50) 처리가 균일하게 이루어지기 위해서는 챔버(60) 내에 확산된 원료의 분포 범위가 균일해야 할 수 있다. 그러나, 현실적으로 챔버(60) 내의 원료 분포를 고르게 하는 것이 어려울 수 있다. 결과적으로, 챔버(60) 내의 원료 분포가 불균일하므로, 기판(50)에 대한 증착, 식각 등의 막 공정이 균일하게 이루어지기 어려울 수 있다. In order to uniformly process the substrate 50 including thin film deposition, the distribution range of the raw material diffused in the chamber 60 may be uniform. However, in reality, it may be difficult to evenly distribute the raw material in the chamber 60 . As a result, since the distribution of the raw material in the chamber 60 is non-uniform, it may be difficult to uniformly perform a film process such as deposition and etching on the substrate 50 .
원료는 평면상으로 챔버(60)의 가운데에 집중적으로 분포되기 쉽다. 따라서, 한 장의 기판(50)을 기준으로, 챔버(60) 가운데에 인접한 영역에 대한 처리가 챔버(60) 가장자리에 인접한 영역에 대한 처리보다 강하게 이루어질 수 있다. The raw material tends to be centrally distributed in the center of the chamber 60 in a planar view. Accordingly, on the basis of one substrate 50 , the processing of the region adjacent to the center of the chamber 60 may be performed more intensely than the processing of the region adjacent to the edge of the chamber 60 .
따라서, 박막의 증착시 기판(50)의 일측이 타측보다 두껍게 증착되는 불균일 문제가 발생할 수 있다. 이러한 분균일한 공정 처리 문제는 기판(50)의 세척 공정, 식각 공정에서도 동일하게 나타날 수 있다.Accordingly, there may be a non-uniformity problem in that one side of the substrate 50 is deposited thicker than the other side when the thin film is deposited. Such a uniform process treatment problem may also appear in the cleaning process and the etching process of the substrate 50 .
챔버(60) 내에 제1 기판(50)과 제2 기판(50)이 함께 배치된 경우 원료 분포의 불균일로 인해 제1 기판(50)의 박막 두께와 제2 기판(50)의 박막 두께가 달라질 수 있다. When the first substrate 50 and the second substrate 50 are disposed together in the chamber 60 , the thin film thickness of the first substrate 50 and the thin film thickness of the second substrate 50 are different due to non-uniform distribution of raw materials. can
본 발명은 원료의 불균일 분포 여부에 상관없이 단일 기판(50)의 영역별 처리 상태를 균일하게 하기 위한 것이다. 아울러, 동시에 처리되는 복수의 기판(50)의 처리 상태를 서로 균일하게 하기 위한 것이다.The present invention is to make the processing state of each region of a single substrate 50 uniform regardless of non-uniform distribution of raw materials. In addition, it is to make the processing state of the plurality of substrates 50 to be processed simultaneously to each other uniform.
본 발명의 기판(50) 처리 장치는 복수의 기판(50)을 동시에 처리하기 위해 포켓부(200)가 마련될 수 있다. 포켓부(200)는 디스크부(100)에 복수로 설치될 수 있고, 포켓부(200)에는 기판(50)이 안착될 수 있다. In the substrate 50 processing apparatus of the present invention, a pocket 200 may be provided to simultaneously process a plurality of substrates 50 . A plurality of pocket portions 200 may be installed on the disk portion 100 , and the substrate 50 may be seated on the pocket portion 200 .
디스크부(100) 또는 포켓부(200)는 공정 중에 회전할 수 있고 기판(50)이 포켓부(200)에 안정적으로 안착되기 위해서, 포켓부(200)에는 안착면(210) 또는 안착턱(220)이 구비될 수 있다. The disk part 100 or the pocket part 200 can rotate during the process and in order for the substrate 50 to be stably seated on the pocket part 200, the pocket part 200 has a seating surface 210 or a seating jaw ( 220) may be provided.
일 실시 예로, 기판(50)이 원형 형상인 경우, 안착면(210)도 기판(50)과 동일한 크기의 원형 형상일 수 있다. 안착턱(220)은 안착면(210)의 둘레에 대면되게 형성될 수 있고, 소정의 높이를 가질 수 있다. 안착턱(220)의 높이는 기판(50)의 두께보다 같거나 클 수 있다. For example, when the substrate 50 has a circular shape, the seating surface 210 may also have a circular shape having the same size as that of the substrate 50 . The seating jaw 220 may be formed to face the circumference of the seating surface 210 and may have a predetermined height. The height of the seating ridge 220 may be equal to or greater than the thickness of the substrate 50 .
따라서, 기판(50)은 안착면(210) 또는 안착턱(220)에 의해서 디스크부(100)에 마련된 복수의 포켓부(200)에 안정적으로 안착된 상태로 공정이 진행될 수 있다. Accordingly, the process may proceed in a state where the substrate 50 is stably seated on the plurality of pockets 200 provided in the disk unit 100 by the seating surface 210 or the seating ridge 220 .
포켓부(200)의 제1 회전 및 제2 회전이 멈춘 경우, 기판(50)이 포켓부(200)에 안착되거나, 기판(50)이 포켓부(200)로부터 이탈될 수 있고, 이 경우 리프트부(300)는 승강할 수 있다. When the first and second rotations of the pocket unit 200 are stopped, the substrate 50 may be seated on the pocket unit 200 or the substrate 50 may be separated from the pocket unit 200, in which case the lift The unit 300 can ascend and descend.
리프트부(300)가 하강하여 기판(50)이 포켓부(200)에 안착되는 경우, 기판(50)은 안착면(210)에 평행하게 대면할 수 있고, 이때 기판(50)은 지지부(310) 및 안착면(210)과 접촉한 상태일 수 있다.When the lift unit 300 descends and the substrate 50 is seated on the pocket unit 200 , the substrate 50 may face the mounting surface 210 in parallel to the substrate 50 , in which case the substrate 50 is supported by the support unit 310 . ) and may be in contact with the seating surface 210 .
기판(50) 안착시, 기판(50)과 안착면(210)이 평행하게 대면하기 위해서는 지지부(310)가 안착면(210)의 수평 높이보다 낮게 하강할 필요가 있고, 하강된 지지부(310)를 위한 공간인 리프트홈(330)이 마련될 수 있다. When the substrate 50 is seated, in order for the substrate 50 and the seating surface 210 to face in parallel, the support part 310 needs to descend lower than the horizontal height of the seating surface 210, and the lowered support part 310 A space for the lift groove 330 may be provided.
리프트부(300)의 승강시 샤프트부(320)는 포켓부(200)의 통공(230)을 따라 가이드되어 수직 방향으로 움직일 수 있다. 리프트부(300)가 최대로 하강한 상태는 기판(50)이 포켓부(200)에 안착할 상태일 수 있다. When the lift unit 300 is lifted, the shaft unit 320 is guided along the through hole 230 of the pocket unit 200 to move in a vertical direction. A state in which the lift unit 300 is maximally descended may be a state in which the substrate 50 is seated on the pocket unit 200 .
리프트부(300)의 최대 하강시 지지부(310)는 리프트홈(330)에 안착될 수 있고, 기판(50)은 안착면(210)에 안착될 수 있다. 기판(50)이 다른 공정을 위해 포켓부(200)로부터 완전히 이탈하지 않는 이상, 리프트부(300)의 승강시 기판(50)은 지지부(310)와 계속 접촉한 상태일 수 있다. When the lift unit 300 is lowered to the maximum, the support unit 310 may be seated in the lift groove 330 , and the substrate 50 may be seated on the seating surface 210 . As long as the substrate 50 does not completely separate from the pocket unit 200 for another process, the substrate 50 may remain in contact with the support unit 310 when the lift unit 300 is lifted.
따라서, 기판(50)은 안착면(210) 및 리프트홈(330)에 의해 포켓부(200)에 안정적으로 안착될 수 있어, 포켓부(200)의 제1 회전 및 제2 회전시에도 기판(50)의 안정적인 막 공정이 진행될 수 있다. Therefore, the substrate 50 can be stably seated in the pocket portion 200 by the seating surface 210 and the lift groove 330, even during the first and second rotations of the pocket portion 200. 50), the stable membrane process can be performed.
리프트홈(330)에는 석션 구멍(332)이 형성될 수 있다. 포켓부(200) 또는 디스크부(300)에는 석션 구멍(332)에 진공을 인가하는 에어 채널(334)이 형성될 수 있다. 석션 구멍(332)은 지지부(310)를 리프트홈(330)쪽으로 흡인할 수 있다. A suction hole 332 may be formed in the lift groove 330 . An air channel 334 for applying a vacuum to the suction hole 332 may be formed in the pocket portion 200 or the disk portion 300 . The suction hole 332 may suck the support 310 toward the lift groove 330 .
지지부(310)는 기판(50)과 대면하는 지지부의 상면(311), 리프트홈(330)에 안착되는 지지부의 하면(312)을 포함할 수 있다. The support part 310 may include an upper surface 311 of the support part facing the substrate 50 and a lower surface 312 of the support part seated in the lift groove 330 .
지지부의 상면(311)은 지지부의 하면(312)보다 돌출될 수 있다. The upper surface 311 of the support part may protrude more than the lower surface 312 of the support part.
지지부의 하면(312)보다 돌출된 지지부의 상면(311)은 리프트홈(330)과 지지부(310) 사이의 틈새를 커버할 수 있다. The upper surface 311 of the support part protruding from the lower surface 312 of the support part may cover a gap between the lift groove 330 and the support part 310 .
따라서, 기판(50)은 리프트홈(330)의 석션 구멍(332)에 의해 리프트홈(330)에 강하게 흡인될 수 있고, 더하여 지지부의 상면(311)에 의해 증착막 성분이 지지부(310)와 리프트홈(330) 사이의 틈새 공간에 침투하는 것을 최대한 방지할 수 있다. Accordingly, the substrate 50 can be strongly sucked into the lift groove 330 by the suction hole 332 of the lift groove 330 , and in addition, the deposition film component is lifted with the support portion 310 by the upper surface 311 of the support portion. Penetration into the gap space between the grooves 330 can be prevented as much as possible.
디스크부(100)에 복수로 형성된 포켓부(200)의 중심은 평면상으로 챔버(60)의 중심과 다를 수 있다. 따라서, 포켓부(200) 및 포켓부(200)에 안착된 기판(50)의 일측은 챔버(60)의 중심에 인접하게 배치되고, 타측은 챔버(60)의 가장자리에 인접하게 배치될 수 있다. The center of the pocket portion 200 formed in plurality in the disk portion 100 may be different from the center of the chamber 60 in plan view. Accordingly, the pocket 200 and one side of the substrate 50 seated on the pocket 200 may be disposed adjacent to the center of the chamber 60 , and the other side may be disposed adjacent to the edge of the chamber 60 . .
디스크부(100)가 챔버(60)에 중심에 설치된 경우, 디스크부(100)의 중심에 가까운 기판(50)의 일측은 디스크부(100)의 가장자리에 가까운 기판(50)의 타측보다 막 증착 성분 밀도가 상대적으로 더 높을 수 있고, 단일 기판(50)내에서도 막에 대한 공정의 불균일 문제가 발생할 수 있다.When the disk part 100 is installed in the center of the chamber 60 , one side of the substrate 50 closer to the center of the disk part 100 is deposited on one side of the substrate 50 more than the other side of the substrate 50 closer to the edge of the disk part 100 . The component density may be relatively higher, and even within a single substrate 50, there may be a problem of non-uniformity of the process for the film.
기판(50)의 불균일 처리를 방지하기 위해 제1 회전부가 이용될 수 있다.The first rotation unit may be used to prevent non-uniform processing of the substrate 50 .
포켓부(200)의 제1 회전에 따르면 포켓부(200)에 안착된 기판(50)에서 챔버(60)의 중심을 향하는 일측 영역이 고정되지 않고 시시각각 변하게 되므로, 기판(50)의 전 영역이 균일하게 처리될 수 있다. According to the first rotation of the pocket portion 200, since the one side area toward the center of the chamber 60 in the substrate 50 seated on the pocket portion 200 is not fixed and changes every moment, the entire area of the substrate 50 is can be treated uniformly.
일 예로, 제1 회전부에 따르면, 기판(50)의 일측과 타측 모두에 균일한 두께의 박막이 증착될 수 있다. 기판(50)은 영역의 구분없이 일정한 두께로 박막이 증착될 수 있다. 식각의 경우 기판(50)의 전체 영역이 고른 깊이로 식각될 수 있다.For example, according to the first rotating unit, a thin film having a uniform thickness may be deposited on both the one side and the other side of the substrate 50 . A thin film may be deposited on the substrate 50 with a constant thickness without division of regions. In the case of etching, the entire area of the substrate 50 may be etched to a uniform depth.
기판(50)은 측단면의 형상이 'T' 형상인 리프트부(300)에 의해 안착면(210)에 평행한 상태를 유지할 수 있다. 즉, 틸팅 현상 없이 포켓부(200)에 안착되거나 포켓부(200)로부터 이격될 수 있다.The substrate 50 may maintain a state parallel to the seating surface 210 by the lift part 300 having a 'T' shape of a side cross-section. That is, it may be seated on the pocket portion 200 or spaced apart from the pocket portion 200 without a tilting phenomenon.
챔버(60) 내에서 제1 기판(50)이 제1 위치에 배치되고, 제2 기판(50)이 제2 위치에 배치될 때, 제1 위치의 원료 농도와 제2 위치의 원료 농도가 서로 다를 수 있다. 제1 기판(50)에 증착된 박막 두께와 제2 기판(50)에 증착된 박막 두께가 서로 달라질 수 있다. 제1 기판(50)에 증착된 박막 두께와 제2 기판(50)에 증착된 박막 두께를 균일화시키기 위해 본 발명의 기판(50) 처리 장치는 제2 회전부를 더 포함할 수 있다.When the first substrate 50 is disposed in the first position and the second substrate 50 is disposed in the second position in the chamber 60, the concentration of the raw material at the first position and the concentration of the raw material at the second position are mutually can be different. The thickness of the thin film deposited on the first substrate 50 and the thickness of the thin film deposited on the second substrate 50 may be different from each other. In order to equalize the thickness of the thin film deposited on the first substrate 50 and the thickness of the thin film deposited on the second substrate 50 , the apparatus for processing the substrate 50 of the present invention may further include a second rotation unit.
포켓부(200)의 제2 회전은 포켓부(200) 외부에 마련된 제2 회전축(20)을 기준으로 포켓부(200)가 회전하는 것일 수 있다. 이때, 제2 회전축(20)은 챔버(60)의 중심 또는 디스크부(100)의 중심에 마련되는 것이 좋을 수 있다. The second rotation of the pocket part 200 may be rotation of the pocket part 200 based on the second rotation shaft 20 provided outside the pocket part 200 . In this case, the second rotation shaft 20 may be provided at the center of the chamber 60 or at the center of the disk unit 100 .
제2 회전부는 포켓부(200)가 설치된 디스크부(100)를 움직이면서, 포켓부(200)의 중심 위치를 변경시킬 수 있다. 일 예로, 제2 회전부에 의해 제1 기판(50)과 제2 기판(50)이 제1 위치와 제2 위치를 교대로 지나가게 되면, 제1 기판(50)과 제2 기판(50)의 박막 두께가 균일화될 수 있다.The second rotating unit may change the central position of the pocket unit 200 while moving the disk unit 100 in which the pocket unit 200 is installed. For example, when the first substrate 50 and the second substrate 50 alternately pass through the first position and the second position by the second rotation unit, the first substrate 50 and the second substrate 50 The thin film thickness can be uniform.
본 발명에 따르면, 제1 회전부에 의해 단일 기판(50)의 처리 균일도가 개선되고, 제2 회전부에 의해 복수 기판(50) 간의 처리 균일도가 개선되므로, 전체 수율이 획기적으로 개선될 수 있다. According to the present invention, since the processing uniformity of the single substrate 50 is improved by the first rotating unit and the processing uniformity between the plurality of substrates 50 is improved by the second rotating unit, the overall yield can be remarkably improved.
모니터링 등을 통해 박막의 균일한 공정을 하기 위해, 제1 회전부와 제2 회전부는 독립적으로 구동될 수 있다. 따라서, 제1 회전부와 제2 회전부를 구분해서 제어하는 제어부가 마련될 수 있다. In order to uniformly process the thin film through monitoring, etc., the first rotating unit and the second rotating unit may be driven independently. Accordingly, a control unit for separately controlling the first rotating unit and the second rotating unit may be provided.
사용자는 기판(50)의 막 처리 결과를 확인한 후, 사후적으로 제어부를 이용해 제1 회전부의 제1 속도 V1과 제2 회전부의 제2 속도 V2를 구분해서 조절할 수 있다. After confirming the film treatment result of the substrate 50 , the user can post-process the first speed V1 of the first rotating unit and the second speed V2 of the second rotating unit by using the control unit.
포켓부(200)를 제1 회전시키는 제1 회전부가 챔버(60)에 고정된 상태라면, 제1 회전부에 의해 디스크부(100)의 움직임이 제한될 수 있다.If the first rotating unit for first rotating the pocket unit 200 is fixed to the chamber 60 , the movement of the disk unit 100 may be restricted by the first rotating unit.
제2 회전부에 의해 디스크부(100)가 원활하게 움직이도록, 제1 회전부는 디스크부(100)와 함께 움직이면서 포켓부(200)를 제1 회전시킬 수 있다.In order to smoothly move the disk unit 100 by the second rotating unit, the first rotating unit may first rotate the pocket unit 200 while moving together with the disc unit 100 .
제1 회전부에는 제1 회전축(10)을 회전시키는 제1 모터 M1, 제1 회전축(10)의 회전에 의해 포켓부(200)가 제1 회전하도록 제1 회전축(10)과 포켓부(200)에 링크되는 기어, 체인, 마그네틱 타입 체인 등이 마련될 수 있다.The first rotating part includes a first motor M1 for rotating the first rotating shaft 10 , and a first rotating shaft 10 and a pocket part 200 so that the pocket part 200 first rotates by the rotation of the first rotating shaft 10 . A gear, a chain, a magnetic type chain, etc. linked to may be provided.
일 예로, 제1 회전부에는 포켓부(200)에 연결된 포켓 기어(14), 포켓 기어(14)에 링크된 메인 기어(12), 메인 기어(12)에 연결된 제1 회전축(10), 제1 회전축(10)을 회전시키는 제1 모터 M1이 구비될 수 있다. 이때, 단일 기판(50)의 처리 균일도 개선을 위해 제1 회전축(10)은 포켓부(200)의 중심에 형성되는 것이 좋을 수 있다. For example, the first rotation unit includes a pocket gear 14 connected to the pocket unit 200 , a main gear 12 linked to the pocket gear 14 , a first rotating shaft 10 connected to the main gear 12 , a first A first motor M1 for rotating the rotating shaft 10 may be provided. In this case, in order to improve the processing uniformity of the single substrate 50 , the first rotation shaft 10 may be formed at the center of the pocket portion 200 .
제1 모터가 회전하면, 제1 모터의 모터 축에 연결된 제1 회전축(10)이 회전될 수 있다. 제1 회전축(10)의 회전에 의해 메인 기어(12)가 회전하고, 메인 기어(12)에 링크된 포켓 기어(14)가 회전할 수 있다. 포켓 기어(14)가 회전하면 포켓부(200)는 제1 회전할 수 있다.When the first motor rotates, the first rotation shaft 10 connected to the motor shaft of the first motor may rotate. The main gear 12 may rotate by the rotation of the first rotating shaft 10 , and the pocket gear 14 linked to the main gear 12 may rotate. When the pocket gear 14 rotates, the pocket part 200 may first rotate.
제1 모터의 모터 축이 회전하면, 디스크부(100)의 회전 여부에 상관없이 제1 모터의 모터 축에 연결된 제1 회전축(10)이 회전하면서 포켓부(200)가 디스크부(100)에 대해서 상대적으로 회전할 수 있다.When the motor shaft of the first motor rotates, regardless of whether the disk part 100 rotates, the first rotation shaft 10 connected to the motor shaft of the first motor rotates while the pocket part 200 is attached to the disk part 100 . can be rotated relative to
제2 회전부에는 디스크부(100)에 연결된 제2 회전축(20), 제2 회전축(20)을 회전시키는 제2 모터 M2가 마련될 수 있다.A second rotation shaft 20 connected to the disk unit 100 and a second motor M2 for rotating the second rotation shaft 20 may be provided in the second rotation unit.
제1 모터 M1과 제2 모터 M2는 챔버(60)의 외부에 설치될 수 있다. 따라서, 제1 모터 M1에 연결된 제1 회전축(10)과 제2 모터 M2에 연결된 제2 회전축(20)은 챔버(60)를 관통할 수 있다.The first motor M1 and the second motor M2 may be installed outside the chamber 60 . Accordingly, the first rotation shaft 10 connected to the first motor M1 and the second rotation shaft 20 connected to the second motor M2 may pass through the chamber 60 .
외부로부터 밀폐된 구조로 형성된 챔버(60)를 관통하는 요소가 많아질수록 불리하므로, 제1 회전축(10)과 제2 회전축(20)은 동축 상에 배치되는 것이 좋을 수 있다.Since it is disadvantageous as the number of elements penetrating the chamber 60 formed in a closed structure from the outside increases, it may be preferable that the first rotation shaft 10 and the second rotation shaft 20 are coaxially disposed.
일 예로, 제1 회전축(10)은 중공 파이프 형상으로 형성될 수 있다. 이때, 제2 회전축(20)은 제1 회전축(10)의 중공에 회전 가능하게 삽입될 수 있다. For example, the first rotation shaft 10 may be formed in a hollow pipe shape. At this time, the second rotation shaft 20 may be rotatably inserted into the hollow of the first rotation shaft 10 .
이에 따르면, 외형적으로 제1 회전축(10)만이 챔버(60)를 관통할 수 있다. 물론, 제2 회전축(20)이 중공 파이프 형상으로 형성되고 제1 회전축(10)이 제2 회전축(20)의 중공에 삽입되는 실시 예도 가능할 수 있다. Accordingly, externally, only the first rotation shaft 10 may penetrate the chamber 60 . Of course, an embodiment in which the second rotation shaft 20 is formed in a hollow pipe shape and the first rotation shaft 10 is inserted into the hollow of the second rotation shaft 20 may be possible.
제어부에 의해 서로 구분되어 제어되는 제1 모터 M1과 제2 모터 M2에 의해 포켓부(200)와 디스크부(100)는 다른 회전 속도로 회전할 수 있으며, 동일 방향 또는 서로 다른 방향으로 회전할 수도 있다.The pocket unit 200 and the disk unit 100 may rotate at different rotation speeds by the first motor M1 and the second motor M2 that are separately controlled by the controller, and may rotate in the same direction or in different directions. have.
기판(50)을 승강시키는 리프트부(300)가 마련될 수 있다. 기판(50)은 리르트부가 상승하면 포켓부(200)의 안착면(210)으로부터 이격되고, 리프트부(300)가 하강하면 안착면(210)에 안착될 수 있다.A lift unit 300 for elevating the substrate 50 may be provided. The substrate 50 may be spaced apart from the seating surface 210 of the pocket part 200 when the lift part rises, and may be seated on the seating surface 210 when the lift part 300 descends.
안착면(210)에 안착된 기판(50)에는 박막이 증착될 수 있으며, 이때, 박막 일부는 포켓부(200)에도 증착될 수 있다. 이에 따르면, 기판(50)과 포켓부(200)는 박막에 의해 일부 접착된 상태가 될 수 있으며, 리프트에 의해 해당 접착이 떨어질 수 있다. A thin film may be deposited on the substrate 50 seated on the seating surface 210 , and in this case, a portion of the thin film may also be deposited on the pocket 200 . Accordingly, the substrate 50 and the pocket portion 200 may be partially bonded by the thin film, and the corresponding bonding may be separated by the lift.
이때, 접착을 끊기 위해 가해지는 리프트의 압력에 의해 기판(50)이 훼손되기 쉽다. 또한, 접착을 떼어내는 과정, 승강하는 과정에서 기판(50)이 기울어지면서 리프트로부터 떨어지는 현상이 발생될 수도 있다. At this time, the substrate 50 is easily damaged by the lift pressure applied to break the adhesion. In addition, a phenomenon that the substrate 50 is tilted and dropped from the lift may occur in the process of peeling the adhesive and in the process of lifting and lowering.
기판(50)의 훼손을 방지하기 위해 리프트부(300)는 특수한 구조를 취할 수 있다.In order to prevent damage to the substrate 50 , the lift unit 300 may have a special structure.
접착을 떼어내는 과정 등에 의해 기판(50)에 인가되는 압력이 분산되도록, 리프트부(300)에는 포켓부(200)의 안착면(210)에 평행하게 연장되는 지지부(310)가 마련될 수 있다. 지지부(310)는 기판(50)과 평행하게 면접촉할 수 있고, 기판(50)에 가해지는 압력을 고르게 분산시킬 수 있으며, 승강 과정에서 기판(50)이 기울어지는 현상을 확실하게 방지할 수 있다.A support part 310 extending parallel to the seating surface 210 of the pocket part 200 may be provided on the lift part 300 so that the pressure applied to the substrate 50 is dispersed by a process of peeling the adhesive. . The support part 310 may be in surface contact with the substrate 50 in parallel, and the pressure applied to the substrate 50 may be evenly distributed, and the inclination of the substrate 50 may be reliably prevented in the elevating process. have.
기판(50)을 보호하기 위해 지지부(310)는 포켓부(200)의 안착면(210)에 평행한 것이 좋을 수 있다. 지지부(310)가 안착면(210)에 평행하도록 리프트부(300)에는 지지부(310)의 중심으로부터 아래를 향해 연장되는 샤프트부(320)가 마련될 수 있다. In order to protect the substrate 50 , the support 310 may be parallel to the seating surface 210 of the pocket 200 . A shaft part 320 extending downward from the center of the support part 310 may be provided on the lift part 300 so that the support part 310 is parallel to the seating surface 210 .
샤프트부(320)의 연장 방향은 지지부(310)의 승강 방향과 동일할 수 있다. 샤프트부(320)는 디스크부(100)에 형성된 통공(230)에 관통 설치될 수 있다. 이때, 통공(230)은 디스크부(100)의 윗면으로부터 아랫면까지 연장될 수 있다. 통공(230)은 디스크부(100)의 중심에 위치할 수 있다. The extension direction of the shaft part 320 may be the same as the elevation direction of the support part 310 . The shaft part 320 may be installed through the through hole 230 formed in the disk part 100 . In this case, the through hole 230 may extend from the upper surface to the lower surface of the disk unit 100 . The through hole 230 may be located in the center of the disk unit 100 .
샤프트부(320)는 디스크부(100)의 통공(230)에 의해 상승과 하강이 가이드될 수 있다. 통공(230)에 의해 가이드되는 샤프트부(320)는 승강 방향과 다르게 기울어지는 것이 방지되며, 샤프트부(320)에 연결된 지지부(310)는 항상 포켓부(200)의 안착면(210)에 평행한 상태를 유지할 수 있다.The shaft unit 320 may be guided upward and downward by the through hole 230 of the disk unit 100 . The shaft portion 320 guided by the through hole 230 is prevented from inclining differently from the lifting direction, and the support portion 310 connected to the shaft portion 320 is always parallel to the seating surface 210 of the pocket portion 200 . can maintain one state.
챔버(60)에는 샤프트부(320)를 위로 밀거나 아래로 잡아당기는 리프트 구동부(340)가 마련될 수 있다. A lift driving unit 340 for pushing the shaft unit 320 upward or pulling downwards may be provided in the chamber 60 .
제1 회전부는 디스크부(100)의 밑면에 대면하게 배치될 수 있다. 이때, 리프트 구동부(340)는 디스크부(100) 또는 포켓부(200)가 움직일 때, 제1 회전부로부터 도피되게 아래로 하강한 상태를 유지할 수 있다. 이때, 리프트부(300)는 자중에 의해 하강한 상태가 될 수 있다. 리프트 구동부(340)는 디스크부(100) 및 포켓부(200)가 정지되면, 상승해서 샤프트부(320)를 위로 밀어올릴 수 있다.The first rotation unit may be disposed to face the bottom surface of the disk unit 100 . At this time, when the disk unit 100 or the pocket unit 200 moves, the lift driving unit 340 may maintain a downwardly descending state to escape from the first rotating unit. At this time, the lift unit 300 may be in a lowered state by its own weight. When the disk unit 100 and the pocket unit 200 are stopped, the lift driving unit 340 may rise and push the shaft unit 320 upward.
포켓부(200)는 디스크부(100)의 통공(230)에 대면하게 디스크부(100)의 상부에 설치될 수 있고, 디스크부(100)의 통공(230)을 통해 포켓 기어(14)에 연결될 수 있다. 이때, 포켓 기어(14)와 통공(230)의 사이 또는 포켓부(200)와 통공(230)의 사이에는 포켓 기어(14) 또는 포켓부(200)의 회전을 허용하는 베어링이 개재될 수 있다.The pocket portion 200 may be installed on the upper portion of the disk portion 100 to face the through hole 230 of the disk portion 100 , and to the pocket gear 14 through the through hole 230 of the disk portion 100 . can be connected At this time, a bearing allowing rotation of the pocket gear 14 or the pocket portion 200 may be interposed between the pocket gear 14 and the through hole 230 or between the pocket portion 200 and the through hole 230 . .
기판(50) 처리 장치에는 가열 수단(30)이 마련될 수 있다. 가열 수단(30)은 챔버(60) 내에 설치되고 고온으로 가열되어 원료가 기판(50)에 처리되도록 유도할 수 있다. 가열 수단(30)은 제1 회전부와 챔버(60)의 밑면 사이에 제1 회전부로부터 이격된 위치에 설치될 수 있다.A heating means 30 may be provided in the apparatus for processing the substrate 50 . The heating means 30 may be installed in the chamber 60 and heated to a high temperature to induce the raw material to be processed on the substrate 50 . The heating means 30 may be installed between the first rotating unit and the bottom surface of the chamber 60 at a position spaced apart from the first rotating unit.
디스크부(100)가 제2 회전축(20)을 기준으로 회전할 때, 가열 수단(30)는 적어도 디스크부(100)의 일측 외주면으로부터 제2 회전축(20)까지 연장되는 것이 좋다. 본 실시예에 따르면, 회전하는 디스크부(100)에 의해 각 포켓부(200)가 가열 수단(30)에 의해 고르게 가열될 수 있으므로, 단일 기판(50)에 대한 처리 균일도 및 복수 기판(50) 간의 처리 균일도가 개선될 수 있다. When the disk part 100 rotates with respect to the second rotation shaft 20 , the heating means 30 may extend from at least one outer circumferential surface of the disk part 100 to the second rotation shaft 20 . According to this embodiment, since each pocket part 200 can be uniformly heated by the heating means 30 by the rotating disk part 100 , processing uniformity for a single substrate 50 and a plurality of substrates 50 . The processing uniformity of the liver can be improved.
지지부(310)의 형상에 따라, 리프트홈(330)의 형상이 결정될 수 있다. 지지부(310)가 하강시 기판(50)은 안착면(210)과 접촉할 수 있다. 포켓부(200)에 기판(50)이 안착되는 경우, 기판(50)은 안착면(210) 및 지지부(310)와 동시에 접촉할 수 있다. The shape of the lift groove 330 may be determined according to the shape of the support part 310 . When the support part 310 descends, the substrate 50 may contact the seating surface 210 . When the substrate 50 is seated on the pocket part 200 , the substrate 50 may contact the seating surface 210 and the support part 310 at the same time.
따라서, 리프트홈(330)의 형상은 리프트부(300)의 하강시 안착면(210)과 지지부(310)의 상면이 평행을 이루는 형상이면 충분할 수 있다.Accordingly, the shape of the lift groove 330 may be sufficient if the seating surface 210 and the upper surface of the support part 310 are parallel to each other when the lift part 300 descends.
그러나, 리프트홈(330)의 형상이 지지부(310)의 형상보다 크게 마련되는 경우, 안착된 기판(50)과 포켓부(200) 사이에 빈 공간이 형상될 수 있다. 상기 빈 공간은 회전 등의 공정 자체에 의한 진동을 유발할 수 있다. However, when the shape of the lift groove 330 is larger than the shape of the support part 310 , an empty space may be formed between the seated substrate 50 and the pocket part 200 . The empty space may cause vibration due to the process itself such as rotation.
안착된 기판(50)은 안착면(210), 지지부(310), 빈 공간과 접촉할 수 있고, 이는 빈 공간이 없는 경우에 비해 온도 구배를 일으킬 수 있는 요인이 증가한 것일 수 있다. 따라서 리프트홈(330)은 지지부(310)와 동일한 형상으로 형성될 수 있다. The seated substrate 50 may come in contact with the seating surface 210 , the support 310 , and the empty space, which may be an increase in factors that may cause a temperature gradient compared to the case in which there is no empty space. Therefore, the lift groove 330 may be formed in the same shape as the support part 310 .
가열 수단(30)에 의해 안착된 기판(50)이 처리되는 경우, 기판(50)은 안착면(210)과 지지부(310)의 두 종류 다른 물질과 접촉하기에 기판(50)의 온도가 불균일할 수 있다. 구조상 지지부(310)는 포켓부(200)의 중앙에 위치할 수 있다. When the substrate 50 seated by the heating means 30 is processed, the substrate 50 comes into contact with two different materials, the seat surface 210 and the support part 310 , so that the temperature of the substrate 50 is non-uniform. can do. Structurally, the support part 310 may be located in the center of the pocket part 200 .
포켓부(200)의 중앙를 관통하는 가상의 수직선을 제1 위치라고 하면, 제1 위치에는 포켓의 중앙, 지지부(310), 샤프트부(320), 통공(230)중 적어도 어느 하나가 마련될 수 있다. If a virtual vertical line passing through the center of the pocket portion 200 is referred to as a first position, at least one of the center of the pocket, the support portion 310, the shaft portion 320, and the through hole 230 may be provided at the first position. have.
가열 수단(30)이 디스크부(100)의 하부에서 포켓부(200)를 가열하는 경우, 기판(50)의 중앙은 가열 수단(30)으로부터 받는 열이 적게 도달할 수 있다. 기판(50)의 중앙 부분의 온도는 기판(50)의 가장 자리의 온도보다 낮게 측정될 수 있다. When the heating means 30 heats the pocket part 200 in the lower part of the disk part 100 , the heat received from the heating means 30 may reach the center of the substrate 50 less. The temperature of the central portion of the substrate 50 may be measured to be lower than the temperature of the edge of the substrate 50 .
처리되는 기판(50)의 온도 구배가 지지부(310)에 의해서 영향 받을 수 있고, 이러한 지지부(310)에 의한 온도 구배 영향을 낮추어야 기판(50)에 증착되는 막도 균일하게 처리될 수 있다. The temperature gradient of the substrate 50 to be processed may be affected by the support part 310 , and the film deposited on the substrate 50 may be uniformly processed only when the influence of the temperature gradient by the support part 310 is lowered.
지지부(310)에 의한 기판(50)의 온도 구배 영향을 개선하기 위해, 기판(50)과 접촉하는 지지부(310)의 형상은 기판(50)과 접촉하는 면적이 최소화되는 형상으로 선택될 수 있다. 이러한 형상은 리프트부(300)에 의한 기판(50)의 승강 동작시 기판(50)에 결함을 일으키는 충격을 주지 않는 조건을 만족해야할 수 있다. In order to improve the influence of the temperature gradient of the substrate 50 by the support 310 , the shape of the support 310 in contact with the substrate 50 may be selected such that the area in contact with the substrate 50 is minimized. . Such a shape may have to satisfy the condition of not giving an impact that causes defects to the substrate 50 during the lifting operation of the substrate 50 by the lift unit 300 .
지지부(310)의 일 실시 예로, 지지부(310)는 원형으로 마련될 수 있고, 이를 제1 타입이라 할 수 있다. 지지부(310)의 형상과 마찬가지로 리프트홈(330) 또한 원형으로 구비될 수 있고, 리프트홈(330)의 반경은 지지부(310)의 반경보다 클 수 있다. 리프트부(300)의 하강시 지지부(310)는 리프트홈(330)에 정확히 빈공간 없이 삽입될 수 있다. As an example of the support part 310 , the support part 310 may be provided in a circular shape, and this may be referred to as a first type. Like the shape of the support part 310 , the lift groove 330 may also be provided in a circular shape, and the radius of the lift groove 330 may be larger than the radius of the support part 310 . When the lift part 300 is lowered, the support part 310 may be accurately inserted into the lift groove 330 without an empty space.
지지부(310)의 상면과 안착면(210)이 플랫 평면이 되기 위해, 지지부(310)의 두께는 리프트홈(330)의 두께와 동일할 수 있다. In order for the upper surface and the seating surface 210 of the support part 310 to be flat, the thickness of the support part 310 may be the same as the thickness of the lift groove 330 .
지지부(310)의 다른 실시 예로, 지지부(310)는 삼발이 형상으로 마련될 수 있고, 이를 제2 타입이라 할 수 있다. As another embodiment of the support 310 , the support 310 may be provided in a tripod shape, and this may be referred to as a second type.
제2 타입의 지지부(310)는 지지편(316), 중앙부(314)를 포함할 수 있다. 지지편(316)은 복수개로 마련될 수 있고, 예를 들어, 지지편(316)은 3개로 구비될 수 있다. 지지부(310)는 수평으로 평행하게 기판(50)과 면 접촉할 수 있다. The second type of support 310 may include a support piece 316 and a central portion 314 . The support piece 316 may be provided in plurality, for example, the support piece 316 may be provided in three. The support 310 may be in surface contact with the substrate 50 in a horizontal and parallel manner.
세 개의 지지편(316)은 2차원 평면을 안정적으로 지지하는 가장 안정적이고 최소한의 방법일 수 있다. 즉, 지지편(316)은 4개 이상으로 마련될 수 있지만, 지지편(316)의 개수가 늘어나는 것은 기판(50)과 접촉하는 지지부(310)의 면적 증가를 의미할 수 있다. 따라서, 구조상의 안정성을 위하여 필수적이지 않다면 지지편(316)의 개수는 3개로 충분할 수 있다. The three support pieces 316 may be the most stable and minimal way to stably support a two-dimensional plane. That is, four or more support pieces 316 may be provided, but an increase in the number of support pieces 316 may mean an increase in the area of the support part 310 in contact with the substrate 50 . Accordingly, if not essential for structural stability, three support pieces 316 may be sufficient.
지지편(316)은 평면상에서 120도의 각도로 배열될 수 있다. 지지편(316)은 중앙부(314)로부터 방사형으로 연장될 수 있다. 각 지지편(316)의 일단은 중앙부(314)에 연결될 수 있다. 마찬가지로, 리프트홈(330)은 제2 타입의 지지부(310)와 동일한 형상으로 형성될 수 있다. The support pieces 316 may be arranged at an angle of 120 degrees in a plane view. The support piece 316 may extend radially from the central portion 314 . One end of each support piece 316 may be connected to the central portion 314 . Similarly, the lift groove 330 may be formed in the same shape as the second type of support 310 .
중앙부(314)의 중심에서 지지편(316)의 타단까지의 길이가 제1 타입의 지지부(310)의 반경과 동일한 경우, 제2 타입은 제1 타입보다 지지부(310)의 면적이 훨씬 줄어들 수 있다. 즉, 제2 타입은 제1 타입보다 상대적으로 포켓부(200)의 부피가 줄어든 것일 수 있고, 제2 타입에 의한 기판(50)의 온도 구배는 제1 타입보다 훨씬 줄어들 수 있다. When the length from the center of the central portion 314 to the other end of the support piece 316 is the same as the radius of the first type support portion 310, the area of the support portion 310 of the second type may be significantly reduced than that of the first type. have. That is, the second type may have a relatively reduced volume of the pocket portion 200 than that of the first type, and the temperature gradient of the substrate 50 according to the second type may be significantly reduced than that of the first type.
중앙부(314)의 하면에는 샤프트부(320)가 대면할 수 있고, 샤프트부(320)의 일측에는 디컷부(320a)가 마련될 수 있다. 디컷부(320a)는 기판(50)과 접촉 면적이 줄어드는 지지부(310)의 형상 변화에 따라, 포켓부(200)의 회전시 지지부(310)가 회전하는 것을 방지할 수 있다. A lower surface of the central portion 314 may face the shaft portion 320 , and a decut portion 320a may be provided on one side of the shaft portion 320 . The decut part 320a may prevent the support part 310 from rotating when the pocket part 200 rotates according to a change in the shape of the support part 310 in which the contact area with the substrate 50 is reduced.
샤프트부(320)는 중앙부(314)의 하면에 수직으로 연결될 수 있고, 디컷부(320a)도 샤프트부(320)를 따라 수직으로 연장될 수 있다. 지지부(310)의 설계에 따라 필요한 경우 디컷부(320a)는 추가로 마련될 수 있다. The shaft portion 320 may be vertically connected to the lower surface of the central portion 314 , and the decut portion 320a may also extend vertically along the shaft portion 320 . If necessary according to the design of the support part 310, the decut part 320a may be additionally provided.
사용자가 설정한 온도에 대한 기판의 평균 온도는 제1 타입 및 제2 타입이 비슷할 수 있다. The average temperature of the substrate with respect to the temperature set by the user may be similar to the first type and the second type.
그러나, 수평 방향 및 수직 방향의 온도 차이는 제2 타입이 제1 타입보다 수평 방향 온도 차이가 줄어들 수 있다. However, as for the temperature difference in the horizontal direction and the vertical direction, the temperature difference in the horizontal direction of the second type may be smaller than that of the first type.
제1 타입 또는 제2 타입중 어느 경우나 포켓부(200)의 공전만 한 경우에 비해서, 포켓부(200)의 자전과 공전을 동시에 한 경우에, 증착막의 두께 편차가 줄어들고, 균일도가 개선될 수 있다. In either case of the first type or the second type, when the pocket unit 200 rotates and revolves at the same time, compared to the case where the pocket unit 200 only revolves, the thickness deviation of the deposition film is reduced and the uniformity is improved. can
또한, 제2 타입의 증착막 편차와 균일도가 제1 타입보다 줄어들고 개선될 수 있다. 이는 지지부(310) 형상에 있어, 제2 타입이 제1 타입보다 기판(50)과 직접 접촉하는 지지부(310)의 면적이 훨씬 줄어들어, 제2 타입이 제1 타입보다 온도 구배가 개선될 수 있다. Also, the deviation and uniformity of the deposition film of the second type may be reduced and improved compared to that of the first type. This is because in the shape of the support part 310, the area of the support part 310 in direct contact with the substrate 50 is much reduced in the second type than the first type, so that the temperature gradient of the second type can be improved than that of the first type. .
식각 공정은 필요한 회로 패턴을 제외한 나머지 부분을 제거하는 과정일 수 있고, 습식 식각률은 식각의 정도를 나타내는 것일 수 있다. The etching process may be a process of removing portions other than a necessary circuit pattern, and the wet etching rate may indicate the degree of etching.
건식 식각에 비해 습식 식각은 등방성(isotropic)을 지닌 식각이 일어날 수 있다. 즉, 습식 식각의 과도한 식각은 기판(50)의 회로패턴 아래 부분으로 침투하는 불필요한 식각이 발생할 수 있고, 이를 언더컷(undercut) 현상이라 할 수 있다. Compared to dry etching, wet etching may perform isotropic etching. That is, excessive etching of the wet etching may cause unnecessary etching that penetrates into the lower portion of the circuit pattern of the substrate 50 , which may be referred to as an undercut phenomenon.
제2 타입은 제1 타입보다 기판의 온도 구배가 개선되기에 제1 타입의 언더컷 현상도 제1 타입보다 개선될 수 있다. Since the temperature gradient of the substrate is improved in the second type than in the first type, the undercut phenomenon of the first type may also be improved compared to that of the first type.

Claims (6)

  1. 기판 처리를 위해 챔버 내에 배치되는 디스크부;a disk unit disposed in the chamber for substrate processing;
    상기 디스크부에 복수로 마련되고, 각각의 기판이 안착되며, 상기 디스크부의 중심에 대하여 등각도로 배열되는 포켓부;a plurality of pocket portions provided in the disk portion, each of the substrates seated therein, and arranged at an equal angle with respect to the center of the disk portion;
    상기 기판을 승강시키는 리프트부; 를 포함하고,a lift unit for elevating the substrate; including,
    상기 리프트부는 상기 포켓부마다 각각 마련되며, 상기 포켓부의 중심에서 상하로 승강되며,The lift part is provided for each pocket part, and is lifted up and down from the center of the pocket part,
    상기 리프트부는 상기 기판과 대면하는 지지부, 상기 지지부와 연결되고 상기 지지부와 수직하는 방향으로 길이가 연장되는 샤프트부를 포함하고,The lift part includes a support part facing the substrate, a shaft part connected to the support part and extending in length in a direction perpendicular to the support part,
    상기 포켓부의 회전시 상기 지지부의 동작을 제한하여 상기 리프트부를 상기 포켓부에 고정시키는 디컷부가 상기 샤프트부의 일측에 마련되며,A decut part for fixing the lift part to the pocket part by limiting the operation of the support part when the pocket part rotates is provided on one side of the shaft part,
    상기 디컷부는 상기 샤프트부의 일부를 축방향으로 절개한 것으로서, 상기 샤프트부의 길이 방향을 따라 연장되는 기판 처리 장치. The decut portion is a portion of the shaft portion cut in an axial direction, and extends along a longitudinal direction of the shaft portion.
  2. 제1 항에 있어서,The method of claim 1,
    상기 리프트부가 하강하는 경우, 상기 지지부가 삽입되는 리프트홈이 상기 포켓부에 구비되며,When the lift part descends, a lift groove into which the support part is inserted is provided in the pocket part,
    상기 리프트홈의 형상은 상기 지지부의 형상과 동일하고, 상기 리프트홈의 두께는 상기 지지부의 두께와 동일하고,The shape of the lift groove is the same as the shape of the support part, and the thickness of the lift groove is the same as the thickness of the support part,
    상기 지지부는 복수의 지지편과 중앙부를 포함하고,The support portion includes a plurality of support pieces and a central portion,
    상기 중앙부의 중심은 상기 포켓부의 중심과 일치하며,The center of the central portion coincides with the center of the pocket portion,
    상기 지지편의 일단은 상기 중앙부와 연결되고, 상기 지지편은 상기 중앙부의 중심을 기준으로 등각도로 배열되며 방사형으로 연장되는 기판 처리 장치.One end of the support piece is connected to the central portion, and the support piece is arranged at an equal angle with respect to the center of the central portion and extends radially.
  3. 제1 항에 있어서,The method of claim 1,
    상기 포켓부는 안착면과 안착턱을 포함하고,The pocket portion includes a seating surface and a seating chin,
    상기 안착면은 상기 기판이 안착되고, 상기 기판과 동일한 형상이며,The seating surface has the same shape as the substrate on which the substrate is seated,
    상기 안착턱은 상기 안착면의 둘레를 따라 대면되게 형성되고,The seating jaw is formed to face along the circumference of the seating surface,
    상기 안착턱은 상기 안착면에 대해 수직 상향으로 돌출되는 기판 처리 장치.The seating jaw protrudes vertically upward with respect to the seating surface.
  4. 제1 항에 있어서,The method of claim 1,
    상기 지지부가 삽입되는 리프트홈이 상기 포켓부에 구비되며,A lift groove into which the support part is inserted is provided in the pocket part,
    상기 지지부는 상기 기판과 대면하는 상기 지지부의 상면, 상기 리프트홈에 안착되는 상기 지지부의 하면을 포함하고,The support part includes an upper surface of the support part facing the substrate, and a lower surface of the support part seated in the lift groove,
    상기 지지부의 상면은 상기 지지부의 하면보다 돌출되며,The upper surface of the support part protrudes from the lower surface of the support part,
    상기 지지부의 하면보다 돌출된 상기 지지부의 상면은 상기 리프트홈과 상기 지지부 사이의 틈새를 커버하는 기판 처리 장치.The upper surface of the support part protruding from the lower surface of the support part covers a gap between the lift groove and the support part.
  5. 기판 처리를 위해 챔버 내에 배치되는 디스크부;a disk unit disposed in the chamber for substrate processing;
    상기 디스크부에 복수로 마련되고, 각각의 기판이 안착되며, 상기 디스크부의 중심에 대하여 등각도로 배열되는 포켓부;a plurality of pocket portions provided in the disk portion, each of the substrates seated therein, and arranged at an equal angle with respect to the center of the disk portion;
    상기 기판을 승강시키는 리프트부; 를 포함하고,a lift unit for elevating the substrate; including,
    상기 리프트부는 상기 포켓부마다 각각 마련되며, 상기 포켓부의 중심에서 상하로 승강되며,The lift part is provided for each pocket part, and is lifted up and down from the center of the pocket part,
    상기 디스크부의 회전에 의해 상기 포켓부는 상기 디스크부의 중심을 기준으로 공전하고,By the rotation of the disk portion, the pocket portion revolves around the center of the disk portion,
    상기 포켓부의 공전시, 상기 포켓부는 상기 포켓부의 중심을 기준으로 자전하며,When the pocket part is idle, the pocket part rotates based on the center of the pocket part,
    상기 포켓부를 중앙을 관통하는 통공이 구비되고,A through hole passing through the center of the pocket is provided,
    상기 리프트부는 상기 기판과 대면하는 지지부, 상기 지지부와 연결되고 상기 지지부와 수직하는 방향으로 길이가 연장되는 샤프트부를 포함하며,The lift part includes a support part facing the substrate, a shaft part connected to the support part and extending in length in a direction perpendicular to the support part,
    상기 통공에 삽입된 상기 샤프트부에 의해 상기 리프트부의 승강이 안내되고,Elevation of the lift part is guided by the shaft part inserted into the through hole,
    상기 샤프트부의 일부를 절개한 디컷부가 상기 포켓부의 회전시 상기 리프트부를 상기 포켓부에 고정시키며,A decut part cut out of a part of the shaft part fixes the lift part to the pocket part when the pocket part rotates,
    상기 디스크부의 회전시 상기 디스크부와 이격되는 리프트 구동부가 마련되며,A lift driving unit spaced apart from the disc unit is provided when the disc unit rotates,
    상기 리프트 구동부는 상기 디스크부가 정지한 상태에서 상기 포켓부의 통공에 진입되고 상기 샤프트부의 단부를 밀어서 상기 리프트부를 상기 포켓부로부터 상승시키는 기판 처리 장치.The lift driving part enters the through hole of the pocket part while the disk part is stopped and pushes the end of the shaft part to raise the lift part from the pocket part.
  6. 기판 처리를 위해 챔버 내에 배치되는 디스크부;a disk unit disposed in the chamber for substrate processing;
    상기 디스크부에 복수로 마련되고, 각각의 기판이 안착되며, 상기 디스크부의 중심에 대하여 등각도로 배열되는 포켓부;a plurality of pocket portions provided in the disk portion, each of the substrates seated therein, and arranged at an equal angle with respect to the center of the disk portion;
    상기 기판을 승강시키는 리프트부; 를 포함하고,a lift unit for elevating the substrate; including,
    상기 리프트부는 상기 포켓부마다 각각 마련되며, 상기 포켓부의 중심에서 상하로 승강되며,The lift part is provided for each pocket part, and is lifted up and down from the center of the pocket part,
    상기 리프트부는 상기 기판과 대면하는 지지부, 상기 지지부와 연결되고 상기 지지부와 수직하는 방향으로 길이가 연장되는 샤프트부를 포함하고,The lift part includes a support part facing the substrate, a shaft part connected to the support part and extending in length in a direction perpendicular to the support part,
    상기 포켓부를 중앙을 관통하는 통공이 구비되며,A through hole passing through the center of the pocket is provided,
    상기 통공에 삽입된 상기 샤프트부에 의해 상기 리프트부의 승강이 안내되고,Elevation of the lift part is guided by the shaft part inserted into the through hole,
    상기 리프트부가 하강하는 경우, 상기 지지부가 삽입되는 리프트홈이 상기 포켓부에 구비되며,When the lift part descends, a lift groove into which the support part is inserted is provided in the pocket part,
    상기 리프트홈에는 석션 구멍이 형성되고,A suction hole is formed in the lift groove,
    상기 포켓부 또는 상기 디스크부에는 상기 석션 구멍에 진공을 인가하는 에어 채널이 형성되며,An air channel for applying a vacuum to the suction hole is formed in the pocket portion or the disk portion,
    상기 석션 구멍은 상기 지지부를 상기 리프트홈쪽으로 흡인하는 기판 처리 장치.The suction hole is a substrate processing apparatus for sucking the support part toward the lift groove.
PCT/KR2021/009517 2021-04-12 2021-07-22 Substrate processing apparatus provided with lift portion WO2022220338A1 (en)

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KR20050080433A (en) * 2004-02-09 2005-08-12 백용구 Apparatus and method for atomic layer depostion using on independent gas flowing segment cell
KR20090012396A (en) * 2007-07-30 2009-02-04 주식회사 아이피에스 Reactor for depositing thin film on wafer
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KR20150098454A (en) * 2014-02-20 2015-08-28 주식회사 원익아이피에스 Apparatus for processing substrate

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