WO2022209482A1

WO2022209482A1 - High frequency module and communication device

Info

Publication number: WO2022209482A1
Application number: PCT/JP2022/007861
Authority: WO
Inventors: 克也中澤; 広幸可児
Original assignee: 株式会社村田製作所
Priority date: 2021-03-31
Filing date: 2022-02-25
Publication date: 2022-10-06
Also published as: US20240022267A1; CN117099313A

Abstract

The present invention suppresses isolation degradation when transmission signals in different frequency bands are transmitted simultaneously. A high frequency module (1) comprises a first power amplifier, a second power amplifier, a first switch (20), a second switch (30), a third switch (40), and a mounting board (100). The first switch (20), the second switch (30), and the third switch (40) are configured to allow for simultaneous connection of the first power amplifier and the second power amplifier to an antenna terminal. The first switch (20) is disposed between the second switch (30) and the third switch (40) in a plan view in a thickness direction (D1) of the mounting board (100). The second switch (30) and the third switch (40) are disposed on the same one of a first main surface (101) and a second main surface (102) of the mounting board (100).

Description

High frequency module and communication device

The present invention generally relates to a high frequency module and communication device, and more particularly to a high frequency module and communication device for amplifying a first transmission signal and a second transmission signal.

A device that selects a frequency band is conventionally known (see Patent Document 1, for example). The front-end module (FET) of Patent Document 1 includes an SPDT (Single-Pole Double Throw) switch (first switch), two SP4T (Single-Pole 4 Throw) switches (second switch, third switch), 8 SAW filters. The first switch switches connection between the antenna and the second switch and switches connection between the antenna and the third switch. The second switch is connected with the first switch. The second switch selects one SAW filter among the four SAW filters as a connection destination of the first switch. The third switch is connected with the first switch. The third switch selects one SAW filter out of four SAW filters different from the four SAW filters as a connection destination of the first switch.

JP 2019-092201 A

By the way, there is a demand for simultaneous transmission of multiple transmission signals in different frequency bands. For example, in the FET of Patent Document 1, the first switch simultaneously connects the second switch and the third switch to different SAW filters. As a result, the FET of Patent Document 1 simultaneously transmits a transmission signal passing through one SAW filter connected to the second switch and a transmission signal passing through one SAW filter connected to the third switch. However, in the FET of Patent Document 1, isolation may decrease when a plurality of transmission signals in different frequency bands are transmitted simultaneously.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a high-frequency module and a communication device capable of suppressing deterioration of isolation when transmitting a plurality of transmission signals in different frequency bands at the same time.

A high-frequency module according to one aspect of the present invention includes a first power amplifier, a second power amplifier, a first switch, a second switch, a third switch, and a mounting substrate. The first power amplifier amplifies a first transmission signal in a first frequency band. The second power amplifier amplifies a second transmission signal in a second frequency band different from the first frequency band. The first switch is connected to the antenna terminal. The second switch switches connection between the first power amplifier and the first switch. The third switch switches connection between the second power amplifier and the first switch. The mounting board has a first main surface and a second main surface facing each other, and the first power amplifier, the second power amplifier, the first switch, the second switch and the third switch are arranged. ing. The first switch, the second switch, and the third switch are configured to allow simultaneous connection of the first power amplifier and the second power amplifier to the antenna terminal. The first switch is arranged between the second switch and the third switch in plan view from the thickness direction of the mounting substrate. The second switch and the third switch are arranged on the same main surface of the first main surface and the second main surface of the mounting substrate.

A high-frequency module according to one aspect of the present invention includes a first power amplifier, a second power amplifier, a first switch, a second switch, a third switch, and a mounting board. The first power amplifier amplifies a first transmission signal in a first frequency band. The second power amplifier amplifies a second transmission signal in a second frequency band different from the first frequency band. The first switch is connected to the antenna terminal. The second switch switches connection between the first power amplifier and the first switch. The third switch switches connection between the second power amplifier and the first switch. The mounting board has a first main surface and a second main surface facing each other, and the first power amplifier, the second power amplifier, the first switch, the second switch and the third switch are arranged. ing. The first switch, the second switch, and the third switch are configured to allow simultaneous connection of the first power amplifier and the second power amplifier to the antenna terminal. The second switch and the third switch are arranged on different main surfaces of the first main surface and the second main surface of the mounting substrate.

A communication device according to an aspect of the present invention includes the high-frequency module, and a signal processing circuit that processes the first transmission signal and the second transmission signal that pass through the high-frequency module.

According to the high-frequency module and the communication device according to the above configuration of the present invention, it is possible to suppress a decrease in isolation when transmitting signals in different frequency bands at the same time.

FIG. 1 is a schematic circuit diagram showing a high frequency module according to one embodiment. FIG. 2 is a plan view showing the arrangement of electronic components on the first main surface of the mounting board included in the high frequency module. FIG. 3 is a plan view of the arrangement of electronic components on the second main surface of the mounting substrate provided in the high-frequency module, seen through from the first main surface side of the mounting substrate. FIG. 4 shows the same high-frequency module and is a cross-sectional view taken along the line X1-X1 of FIG. FIG. 5 is a cross-sectional view of a high-frequency module according to Modification 1 of one embodiment. FIG. 6 is a cross-sectional view of a high-frequency module according to Modification 2 of one embodiment. FIG. 7 is a cross-sectional view of a high-frequency module according to Modification 3 of one embodiment. FIG. 8 is a cross-sectional view of a high-frequency module according to another modification of modification 3 of one embodiment. FIG. 9 is a plan view showing the arrangement of electronic components on the first main surface of the mounting board of the high-frequency module according to Modification 3 of the embodiment.

2 to 9 referred to in the following embodiments and the like are all schematic diagrams, and the ratio of the size and thickness of each component in the diagram does not necessarily reflect the actual dimensional ratio. Not necessarily.

(embodiment)
A high-frequency module 1 and a communication device 500 according to the present embodiment will be described below with reference to FIGS. 1 to 4. FIG.

(1) Outline As shown in FIG. 1, the high frequency module 1 includes a first power amplifier 81, a second power amplifier 82, a first switch 20, a second switch 30, and a third switch 40. . The first power amplifier 81 amplifies the first transmission signal of the first frequency band. A second power amplifier 82 amplifies a second transmission signal in a second frequency band different from the first frequency band. The first switch 20 is connected to the antenna terminals (here, the first antenna terminal 11 and the second antenna terminal 12). The second switch 30 switches connection between the first power amplifier 81 and the first switch 20 . The third switch 40 switches connection between the second power amplifier 82 and the first switch 20 .

Furthermore, the high-frequency module 1 includes a mounting board 100, a first resin layer 120, and a second resin layer 125, as shown in FIG. The mounting board 100 has a first main surface 101 and a second main surface 102 facing each other in the thickness direction D1 of the mounting board 100 . A first power amplifier 81 , a second power amplifier 82 , a first switch 20 , a second switch 30 and a third switch 40 are arranged on the mounting board 100 .

The high-frequency module 1 according to this embodiment is used, for example, in a communication device 500 compatible with multimodes/multibands. The communication device 500 is, for example, a mobile phone (eg, smart phone), but is not limited to this, and may be, for example, a wearable terminal (eg, smart watch). The high-frequency module 1 is a module compatible with, for example, the 4G (fourth generation mobile communication) standard, the 5G (fifth generation mobile communication) standard, and the like. The 4G standard is, for example, the 3GPP (Third Generation Partnership Project) LTE (Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The first switch 20 is configured to allow simultaneous connection of the first power amplifier 81 and the second power amplifier 82 to the antenna terminal. That is, the high-frequency module 1 is a module capable of supporting carrier aggregation and dual connectivity. Here, carrier aggregation and dual connectivity refer to communication that simultaneously uses radio waves of a plurality of frequency bands.

The high-frequency module 1 according to the present embodiment simultaneously performs communication of signals in the frequency band specified by 4G and communication of signals in another frequency band specified by 4G. The high-frequency module 1 simultaneously performs communication of signals in the frequency band specified by 4G and communication of signals in the frequency band specified by 5G. The high-frequency module 1 simultaneously performs communication of signals in the frequency band specified by 5G and communication of signals in another frequency band specified by 5G. Hereinafter, communication by carrier aggregation or dual connectivity is also referred to as simultaneous communication.

The high-frequency module 1 according to the present embodiment performs communication in a mid-band frequency band (first frequency band) and communication in a high-band frequency band (second frequency band). In this embodiment, for example, Band 41 (frequency band 2496 to 2690 MHz) is a high-band frequency band specified by 4G, and Band 1 (frequency band 1920 to 1980 MHz) is a mid-band frequency band specified by 4G. ) are used, respectively. For example, n41 (frequency band 2496 to 2690 MHz) is used as the high-band frequency band specified by 5G, and n1 (frequency band 1920-1980 MHz) is used as the mid-band frequency band specified by 5G. be done. Bands 41 and n41 are used for time division duplex (TDD) communication. Band1 and n1 are used for frequency division duplex (FDD: Frequency Division Duplex). Band 40, for example, may be used as the high-band frequency band defined by 4G. Band 3, Band 2, Band 25, Band 4, Band 66, Band 39, or Band 34, for example, may be used as the mid-band frequency band specified in 4G. For example, n3 may be used as the mid-band frequency band specified in 5G.

In this embodiment, the high-frequency module 1 is capable of simultaneous communication through carrier aggregation or dual connectivity. Therefore, the high-frequency module 1 can simultaneously perform transmission in the high-band frequency band defined by 4G (or 5G) and transmission in the mid-band frequency band defined by 4G (or 5G). be. The high-frequency module 1 can simultaneously receive signals in the high-band frequency band defined by 4G (or 5G) and in the mid-band frequency band defined by 4G (or 5G). Furthermore, the high-frequency module 1 can simultaneously transmit in the high-band frequency band defined by 4G (or 5G) and receive in the mid-band frequency band defined by 4G (or 5G). be. The high-frequency module 1 can simultaneously receive in the high-band frequency band defined by 4G (or 5G) and transmit in the mid-band frequency band defined by 4G (or 5G).

In the present embodiment, the first transmission filter 61 passes a transmission signal (first transmission signal) in the mid-band frequency band (first frequency band). The second transmission filter 62 passes a transmission signal (second transmission signal) in a high-band frequency band (second frequency band), which is a frequency band different from the first frequency band.

The high-frequency module 1 further includes a first transmission filter 61, a second transmission filter 62, a first reception filter 63, and a second reception filter 64, as shown in FIG. The first reception filter 63 passes a reception signal (first reception signal) in the mid-band frequency band. The second reception filter 64 passes a reception signal (second reception signal) in a high-band frequency band that is different from the mid-band frequency band. That is, the second reception filter 64 passes a reception signal (second reception signal) in a frequency band different from the frequency band of the first reception signal.

(2) Configuration The configurations of the high-frequency module 1 and the communication device 500 according to this embodiment will be described below with reference to FIGS. 1 to 4. FIG.

The high-frequency module 1 is configured, for example, to amplify a transmission signal (high-frequency signal) input from the signal processing circuit 501 (see FIG. 1) and output it to the first antenna 511 and the second antenna 512 . The high-frequency module 1 is configured, for example, to amplify received signals (high-frequency signals) input from the first antenna 511 and the second antenna 512 and output the amplified signals to the signal processing circuit 501 . The signal processing circuit 501 is not a component of the high frequency module 1 but a component of the communication device 500 including the high frequency module 1 . The high frequency module 1 is controlled by, for example, a signal processing circuit 501 included in the communication device 500 . A communication device 500 includes a high frequency module 1 and a signal processing circuit 501 . Communication device 500 further includes a first antenna 511 and a second antenna 512 . The communication device 500 further includes a circuit board on which the high frequency module 1 is mounted. The circuit board is, for example, a printed wiring board. The circuit board has a ground electrode to which a ground potential is applied.

The signal processing circuit 501 processes signals passing through the high-frequency module 1 (for example, received signals and transmitted signals). Signal processing circuitry 501 includes, for example, RF signal processing circuitry 502 and baseband signal processing circuitry 503 . The RF signal processing circuit 502 is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on high frequency signals. The RF signal processing circuit 502, for example, performs signal processing such as up-conversion on the high-frequency signal (transmission signal) output from the baseband signal processing circuit 503, and outputs the processed high-frequency signal. Further, the RF signal processing circuit 502 performs signal processing such as down-conversion on the high-frequency signal (received signal) output from the high-frequency module 1, and converts the processed high-frequency signal to the baseband signal processing circuit. 503.

The baseband signal processing circuit 503 is, for example, a BBIC (Baseband Integrated Circuit). A baseband signal processing circuit 503 generates an I-phase signal and a Q-phase signal from the baseband signal. The baseband signal is, for example, an externally input audio signal, image signal, or the like. A baseband signal processing circuit 503 performs IQ modulation processing by combining the I-phase signal and the Q-phase signal, and outputs a transmission signal. At this time, the transmission signal is generated as a modulated signal (IQ signal) obtained by amplitude-modulating a carrier signal of a predetermined frequency with a period longer than the period of the carrier signal. The received signal processed by the baseband signal processing circuit 503 is used, for example, as an image signal for image display or as an audio signal for communication. The high frequency module 1 according to this embodiment transmits high frequency signals (received signals) between the first antenna 511 and the second antenna 512 and the RF signal processing circuit 502 of the signal processing circuit 501 .

The high-frequency module 1 includes a first antenna terminal 11, a second antenna terminal 12, a first switch 20, a second switch 30, and a third switch 40, as shown in FIG. 1, the high-frequency module 1 includes a first matching circuit 51, a second matching circuit 52, a third matching circuit 53, a fourth matching circuit 54, a first transmission filter 61, and a 2 transmit filter 62 , first receive filter 63 and second receive filter 64 . Furthermore, as shown in FIG. 1, the high-frequency module 1 includes a fifth matching circuit 71, a sixth matching circuit 72, a seventh matching circuit 73, an eighth matching circuit 74, a first power amplifier 81, and a A second power amplifier 82, a first low noise amplifier 83, and a second low noise amplifier 84 are provided. The high frequency module 1 further comprises a first input terminal 91 , a second input terminal 92 , a first output terminal 93 and a second output terminal 94 .

The first antenna terminal 11 is electrically connected to the first antenna 511 . The second antenna terminal 12 is electrically connected to the second antenna 512 . Here, "A is connected to B" means not only that A and B are in contact, but also that A and B are connected via a conductor electrode, conductor terminal, wiring, or other circuit component. including being electrically connected through

The first switch 20 is configured so that the first antenna 511 can be connected to the second switch 30 and the second antenna 512 can be connected to the third switch 40 . That is, the first switch 20 is configured to be able to simultaneously connect the second switch 30 and the third switch 40 to the first antenna 511 and the second antenna 512 .

The first switch 20 is electrically connected to the antenna terminal. Specifically, the first switch 20 is electrically connected to the first antenna terminal 11 and the second antenna terminal 12 . The first switch 20 is electrically connected with the second switch 30 and the third switch 40 . Specifically, the first switch 20 has a first terminal 21 , a second terminal 22 , a third terminal 23 and a fourth terminal 24 . Under the control of the signal processing circuit 501, the first switch 20 performs a connection operation (opening/closing operation) between the first terminal 21 and the second terminal 22 or between the first terminal 21 and the fourth terminal 24, And the connection operation (opening/closing operation) between the third terminal 23 and the fourth terminal 24 or between the third terminal 23 and the second terminal 22 is performed. The first terminal 21 is electrically connected to the first antenna terminal 11 . That is, the first terminal 21 is electrically connected to the first antenna 511 via the first antenna terminal 11 . The third terminal 23 is electrically connected to the second antenna terminal 12 . That is, the third terminal 23 is electrically connected to the second antenna 512 via the second antenna terminal 12 . Note that the first terminal 21 is not limited to being directly connected to the first antenna 511 . A filter, coupler, or the like may be provided between the first terminal 21 and the first antenna 511 . Similarly, third terminal 23 is not limited to being directly connected to second antenna 512 . A filter, coupler, or the like may be provided between the third terminal 23 and the second antenna 512 . The second terminal 22 is electrically connected to the second switch 30 . The fourth terminal 24 is electrically connected to the third switch 40 .

The second switch 30 is electrically connected to the first transmission filter 61 and the first reception filter 63 . The second switch 30 is electrically connected to the first switch 20 . Specifically, the second switch 30 has a common terminal 31 and a plurality of (three in the illustrated example)

selection terminals

32 , 33 and 34 . The second switch 30 selects at least one of the plurality of

selection terminals

32 , 33 , 34 as a connection destination of the common terminal 31 under the control of the signal processing circuit 501 . Common terminal 31 is electrically connected to second terminal 22 of first switch 20 . That is, the common terminal 31 is electrically connected to the first antenna terminal 11 via the first switch 20 . That is, the common terminal 31 is electrically connected to the first antenna 511 via the first antenna terminal 11 . The selection terminal 32 is electrically connected to the first transmission filter 61 and the first reception filter 63 . Connection destinations of the

selection terminals

33 and 34 are omitted for the sake of illustration. Each connection destination of the

selection terminals

33 and 34 is a mid-band frequency band, and is a transmission that passes a signal in a frequency band different from the frequency band through which the signal passes in the first transmission filter 61 and the first reception filter 63. It is electrically connected to the filter and the receive filter.

The third switch 40 is electrically connected to the second transmission filter 62 and the second reception filter 64 . The third switch 40 is electrically connected to the first switch 20 . Specifically, the third switch 40 has a common terminal 41 and a plurality of (three in the illustrated example)

selection terminals

42 , 43 and 44 . The third switch 40 selects at least one of the plurality of

selection terminals

42 , 43 , 44 as a connection destination of the common terminal 41 under the control of the signal processing circuit 501 . Common terminal 41 is electrically connected to fourth terminal 24 of first switch 20 . That is, the common terminal 41 is electrically connected to the second antenna terminal 12 via the first switch 20 . That is, the common terminal 41 is electrically connected to the second antenna 512 via the second antenna terminal 12 . The selection terminal 42 is electrically connected to the second transmission filter 62 and the second reception filter 64 . Connection destinations of the

selection terminals

43 and 44 are omitted for the sake of illustration. Each connection destination of the

selection terminals

43 and 44 is a high-band frequency band, and transmission that passes a signal in a frequency band different from the frequency band through which the signal passes in the second transmission filter 62 and the second reception filter 64. It is electrically connected to the filter and the receive filter.

The first switch 20 can be connected simultaneously with the second switch 30 and the third switch 40. Specifically, the first switch 20 is configured to allow simultaneous connection of the first power amplifier 81 and the second power amplifier 82 to the antenna terminal. More specifically, the first switch 20 is configured to be able to simultaneously connect the first power amplifier 81 and the first antenna terminal 11, and the second power amplifier 82 to the second antenna terminal 12, respectively. That is, the first switch 20 can simultaneously connect the first transmission filter 61 and the second transmission filter 62 . By connecting the first transmission filter 61 and the second transmission filter 62 at the same time, simultaneous communication is possible with the first transmission filter 61 and the second transmission filter 62 . "Simultaneous communication is possible" means that simultaneous communication is possible in the frequency band defined by the 3GPP LTE standard that simultaneous communication is possible.

The first matching circuit 51 is, for example, an inductor. More specifically, the first matching circuit 51 is a chip inductor. The first matching circuit 51 is electrically connected in the path between the second switch 30 and the first transmission filter 61 and performs impedance matching between the second switch 30 and the first transmission filter 61 .

The second matching circuit 52 is, for example, an inductor. More specifically, the second matching circuit 52 is a chip inductor. The second matching circuit 52 is electrically connected in the path between the third switch 40 and the second transmission filter 62 and performs impedance matching between the third switch 40 and the second transmission filter 62 .

The third matching circuit 53 is, for example, an inductor. More specifically, the third matching circuit 53 is a chip inductor. The third matching circuit 53 is electrically connected in the path between the second switch 30 and the first reception filter 63 to match the impedances of the second switch 30 and the first reception filter 63 .

The fourth matching circuit 54 is, for example, an inductor. More specifically, the fourth matching circuit 54 is a chip inductor. The fourth matching circuit 54 is electrically connected in the path between the third switch 40 and the second receive filter 64 and performs impedance matching between the third switch 40 and the second receive filter 64 .

In this embodiment, the first matching circuit 51 and the third matching circuit 53, and the second matching circuit 52 and the fourth matching circuit 54 are integrated into one chip. In the present embodiment, a component in which the first matching circuit 51 and the third matching circuit 53 are integrated into one chip is called a first matching chip 50a, and a component in which the second matching circuit 52 and the fourth matching circuit 54 are integrated into one chip. The part with the second matching chip 50b is called a second matching chip 50b.

The first transmission filter 61 is a filter that passes a transmission signal (first transmission signal) in the mid-band frequency band output from the first power amplifier 81 . The first transmission filter 61 is electrically connected to the second switch 30 via the first matching circuit 51 . That is, the first transmission filter 61 is connected to the second switch 30 and passes the first transmission signal. The first transmission filter 61 is, for example, a ladder-type filter, and has multiple (eg, four) series arm resonators and multiple (eg, three) parallel arm resonators. The first transmission filter 61 is, for example, an elastic wave filter. In the elastic wave filter, each of a plurality of series arm resonators and a plurality of parallel arm resonators is composed of an elastic wave resonator. The acoustic wave filter is, for example, a surface acoustic wave filter that utilizes surface acoustic waves. In a surface acoustic wave filter, each of the plurality of series arm resonators and the plurality of parallel arm resonators is, for example, a SAW (Surface Acoustic Wave) resonator. Note that the first transmission filter 61 is not limited to a SAW filter. The first transmission filter 61 may be a BAW (Bulk Acoustic Wave) filter other than the SAW filter, for example. Resonators in BAW filters are, for example, FBARs (Film Bulk Acoustic Resonators) or SMRs (Solidly Mounted Resonators). A BAW filter has a substrate. The substrate that the BAW filter has is, for example, a silicon substrate.

The second transmission filter 62 is a filter that passes a transmission signal (second transmission signal) in the high-band frequency band output from the second power amplifier 82 . The second transmission filter 62 is electrically connected to the third switch 40 via the second matching circuit 52 . That is, the second transmission filter 62 is connected to the third switch 40 and passes the second transmission signal that is different from the frequency band of the first transmission signal. The second transmission filter 62 is, for example, a ladder-type filter, and has multiple (eg, four) series arm resonators and multiple (eg, three) parallel arm resonators. The second transmission filter 62 is, for example, an elastic wave filter. In the elastic wave filter, each of a plurality of series arm resonators and a plurality of parallel arm resonators is composed of an elastic wave resonator. The acoustic wave filter is, for example, a surface acoustic wave filter that utilizes surface acoustic waves. In the surface acoustic wave filter, each of the multiple series arm resonators and the multiple parallel arm resonators is, for example, a SAW resonator. Note that the second transmission filter 62 is not limited to a SAW filter. The second transmission filter 62 may be a BAW filter other than a SAW filter, for example.

The first reception filter 63 is a filter that passes the reception signal (first reception signal) in the mid-band frequency band that is input to the first low-noise amplifier 83 . The first reception filter 63 is electrically connected to the second switch 30 via the third matching circuit 53 . That is, the first reception filter 63 is connected to the second switch 30 and passes the first reception signal. The first reception filter 63 is, for example, a ladder filter, and has multiple (eg, four) series arm resonators and multiple (eg, three) parallel arm resonators. The first reception filter 63 is, for example, an acoustic wave filter. In the elastic wave filter, each of a plurality of series arm resonators and a plurality of parallel arm resonators is composed of an elastic wave resonator. The acoustic wave filter is, for example, a surface acoustic wave filter that utilizes surface acoustic waves. In the surface acoustic wave filter, each of the multiple series arm resonators and the multiple parallel arm resonators is, for example, a SAW resonator. Note that the first reception filter 63 is not limited to a SAW filter. The first reception filter 63 may be, for example, a BAW filter other than the SAW filter.

The second reception filter 64 is a filter that passes the reception signal (second reception signal) in the high frequency band input to the second low-noise amplifier 84 . The second reception filter 64 is electrically connected to the third switch 40 via the fourth matching circuit 54 . That is, the second reception filter 64 is connected to the third switch 40 and passes the second reception signal in a frequency band different from the frequency band of the first reception signal. The second reception filter 64 is, for example, a ladder-type filter, and has multiple (eg, four) series arm resonators and multiple (eg, three) parallel arm resonators. The second reception filter 64 is, for example, an acoustic wave filter. In the elastic wave filter, each of a plurality of series arm resonators and a plurality of parallel arm resonators is composed of an elastic wave resonator. The acoustic wave filter is, for example, a surface acoustic wave filter that utilizes surface acoustic waves. In the surface acoustic wave filter, each of the multiple series arm resonators and the multiple parallel arm resonators is, for example, a SAW resonator. Note that the second reception filter 64 is not limited to a SAW filter. The second reception filter 64 may be a BAW filter other than the SAW filter, for example.

The fifth matching circuit 71 is, for example, an inductor. More specifically, fifth matching circuit 71 is a chip inductor. The fifth matching circuit 71 is electrically connected in a path between the first transmission filter 61 and the first power amplifier 81 and performs impedance matching between the first transmission filter 61 and the first power amplifier 81 .

The sixth matching circuit 72 is, for example, an inductor. More specifically, sixth matching circuit 72 is a chip inductor. The sixth matching circuit 72 is electrically connected in the path between the second transmission filter 62 and the second power amplifier 82 and performs impedance matching between the second transmission filter 62 and the second power amplifier 82 .

The seventh matching circuit 73 is, for example, an inductor. More specifically, the seventh matching circuit 73 is a chip inductor. The seventh matching circuit 73 is electrically connected in the path between the first reception filter 63 and the first low noise amplifier 83 and performs impedance matching between the first reception filter 63 and the first low noise amplifier 83 .

The eighth matching circuit 74 is, for example, an inductor. More specifically, the eighth matching circuit 74 is a chip inductor. The eighth matching circuit 74 is electrically connected in the path between the second reception filter 64 and the second low noise amplifier 84 and performs impedance matching between the second reception filter 64 and the second low noise amplifier 84 .

The first power amplifier 81 amplifies the transmission signal (first transmission signal) in the mid-band frequency band (first frequency band) output by the RF signal processing circuit 502 of the signal processing circuit 501 . An input terminal of the first power amplifier 81 is electrically connected to the first input terminal 91 . An output terminal of the first power amplifier 81 is electrically connected to the fifth matching circuit 71 . That is, the first power amplifier 81 is electrically connected to the first transmission filter 61 via the fifth matching circuit 71 . That is, the first power amplifier 81 is electrically connected to the second switch 30 via the first transmission filter 61 .

The second power amplifier 82 amplifies the transmission signal (second transmission signal) in the high-band frequency band (second frequency band) output by the RF signal processing circuit 502 of the signal processing circuit 501 . An input terminal of the second power amplifier 82 is electrically connected to the second input terminal 92 . An output terminal of the second power amplifier 82 is electrically connected to the sixth matching circuit 72 . That is, the second power amplifier 82 is electrically connected to the second transmission filter 62 via the sixth matching circuit 72 . That is, the second power amplifier 82 is electrically connected to the third switch 40 via the second transmission filter 62 .

The first low-noise amplifier 83 amplifies the reception signal that has passed through the first reception filter 63 . An input terminal of the first low noise amplifier 83 is electrically connected to the seventh matching circuit 73 , and an output terminal of the first low noise amplifier 83 is electrically connected to the first output terminal 93 . That is, the first low-noise amplifier 83 is electrically connected to the first reception filter 63 via the seventh matching circuit 73 . That is, the first low-noise amplifier 83 is electrically connected to the second switch 30 via the first reception filter 63 .

The second low-noise amplifier 84 amplifies the received signal that has passed through the second receive filter 64 . The input terminal of the second low noise amplifier 84 is electrically connected to the eighth matching circuit 74 and the output terminal of the second low noise amplifier 84 is electrically connected to the second output terminal 94 . That is, it is electrically connected to the second reception filter 64 via the second low noise amplifier 84 and the eighth matching circuit 74 . That is, the second low noise amplifier 84 is electrically connected to the third switch 40 via the second reception filter 64 .

The first input terminal 91 , the second input terminal 92 , the first output terminal 93 and the second output terminal 94 are connected to the RF signal processing circuit 502 . That is, the first power amplifier 81 is electrically connected to the RF signal processing circuit 502 via the first input terminal 91 . The second power amplifier 82 is electrically connected to the RF signal processing circuit 502 via the second input terminal 92 . The first low noise amplifier 83 is electrically connected to the RF signal processing circuit 502 via the first output terminal 93 . The second low noise amplifier 84 is electrically connected to the RF signal processing circuit 502 via the second output terminal 94 .

The high-frequency module 1 further includes a mounting substrate 100, a plurality of (two in the illustrated example) external connection terminals 200, a first resin layer 120, and a second resin layer 125 (see FIG. 4).

The mounting substrate 100 has a first main surface 101 and a second main surface 102 facing each other in the thickness direction D1 of the mounting substrate 100 .

The mounting board 100 is, for example, a printed wiring board, an LTCC (Low Temperature Co-fired Ceramics) board, an HTCC (High Temperature Co-fired Ceramics) board, or a resin multilayer board. Here, the mounting substrate 100 is, for example, a multilayer substrate including a plurality of dielectric layers and a plurality of conductive layers, and is a ceramic substrate. The plurality of dielectric layers and the plurality of conductive layers are laminated in the thickness direction D1 of the mounting substrate 100. As shown in FIG. A plurality of conductive layers are formed in a predetermined pattern defined for each layer. Each of the plurality of conductive layers includes one or a plurality of conductor portions within one plane orthogonal to the thickness direction D1 of the mounting substrate 100. As shown in FIG. The material of each conductive layer is copper, for example. The plurality of conductive layers includes a ground layer. In the high-frequency module 1 , one or more ground terminals included in the plurality of external connection terminals 200 and the ground layer are electrically connected via via conductors or the like of the mounting board 100 .

The mounting board 100 is not limited to a printed wiring board or LTCC board, and may be a wiring structure. The wiring structure is, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed in a predetermined pattern. When there are multiple insulating layers, the multiple insulating layers are formed in a predetermined pattern determined for each layer. The conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. When there are a plurality of conductive layers, the plurality of conductive layers are formed in a predetermined pattern determined for each layer. The conductive layer may include one or more redistribution portions. In the wiring structure, the first surface of the two surfaces facing each other in the thickness direction of the multilayer structure is the first principal surface 101 of the mounting substrate 100, and the second surface is the second principal surface 102 of the mounting substrate 100. is. The wiring structure may be, for example, an interposer. The interposer may be an interposer using a silicon substrate, or may be a multi-layered substrate.

The first main surface 101 and the second main surface 102 of the mounting substrate 100 are separated in the thickness direction D1 of the mounting substrate 100 and intersect the thickness direction D1 of the mounting substrate 100 . The first main surface 101 of the mounting substrate 100 is, for example, orthogonal to the thickness direction D1 of the mounting substrate 100, but may include, for example, a side surface of a conductor portion as a surface that is not orthogonal to the thickness direction D1. . Further, the second main surface 102 of the mounting substrate 100 is, for example, orthogonal to the thickness direction D1 of the mounting substrate 100, but includes, for example, the side surface of the conductor portion as a surface that is not orthogonal to the thickness direction D1. You can Also, the first main surface 101 and the second main surface 102 of the mounting substrate 100 may have fine unevenness, concave portions, or convex portions. Although the mounting substrate 100 has a rectangular shape in plan view from the thickness direction D1 of the mounting substrate 100, the shape is not limited to this and may be, for example, a square shape. Here, the planar view of the mounting board 100 means that the mounting board 100 and the electronic components mounted on the mounting board 100 are orthographically projected onto a plane parallel to the main surface (for example, the first main surface 101) of the mounting board 100. means to see

The high frequency module 1 includes a plurality of electronic components. The plurality of electronic components includes a first switch 20, a second switch 30, a third switch 40, a first matching chip 50a, a second matching chip 50b, a first transmission filter 61, a second transmission filter 62, and a first reception filter 63. , a second receiving filter 64, a fifth matching circuit 71 to an eighth matching circuit 74, a first power amplifier 81, a second power amplifier 82, a first low noise amplifier 83 and a second low noise amplifier . The first matching chip 50 a includes a first matching circuit 51 and a third matching circuit 53 . The second matching chip 50 b includes a second matching circuit 52 and a fourth matching circuit 54 .

Each of the plurality of electronic components of the high-frequency module 1 is mounted on the first main surface 101 or the second main surface 102 of the mounting board 100 . That is, in the high frequency module 1 , each of the plurality of electronic components is arranged on the first main surface 101 or the second main surface 102 of the mounting board 100 . The plurality of electronic components are not limited to components mounted on the mounting substrate 100 and may include circuit elements provided within the mounting substrate 100 . In FIG. 4, illustration of a plurality of wirings constituted by the above-described conductor portions, via conductors, etc. of the mounting board 100 is omitted.

In this embodiment, a first matching chip 50a, a second matching chip 50b, a first transmission filter 61, a second transmission filter 62, a first reception filter 63, a second reception filter 64, a fifth matching circuit 71 to an eighth matching The circuit 74, the first power amplifier 81 and the second power amplifier 82 are arranged on the first major surface 101 (see FIG. 2). Here, "the electronic components (the first transmission filter 61, etc.) are arranged on the first main surface 101" means that the electronic components are not only directly mounted on the first main surface 101, but also is mechanically connected to the mounting substrate 100, and the electronic component is located on the first main surface 101 side of the space on the first main surface 101 side and the space on the second main surface 102 side separated by the mounting substrate 100. It means that it is arranged in the space of In other words, it includes that the electronic component is mounted on the first main surface 101 via other circuit elements, electrodes, and the like.

The first switch 20, the second switch 30, the third switch 40, the first low-noise amplifier 83 and the second low-noise amplifier 84 are integrated into one chip to form a switch IC 300 (see FIG. 3). The switch IC 300 is mounted on the second main surface 102 of the mounting substrate 100 (see FIG. 3). That is, the second switch 30 and the third switch 40 are arranged on the same main surface (the second main surface 102 here) of the first main surface 101 and the second main surface 102 of the mounting substrate 100 . Furthermore, the first switch 20 is arranged on the same main surface (here, the second main surface 102) as the main surface on which the second switch 30 and the third switch 40 are arranged. Here, "the electronic components (first switch 20, etc.) are arranged on the second main surface 102" means that the electronic components are not only directly mounted on the second main surface 102, but also that the electronic components are mounted on the second main surface 102. It is mechanically connected to the mounting substrate 100, and in the space on the first main surface 101 side and the space on the second main surface 102 side separated by the mounting substrate 100, the electronic component is located on the second main surface 102 side. It means that they are placed in space. In other words, it includes that electronic components are mounted on the second main surface 102 via other circuit elements, electrodes, and the like.

A plurality of external connection terminals 200 are arranged on the second main surface 102 . More specifically, the plurality of external connection terminals 200 are arranged on the second main surface 102 of the mounting board 100 . Each of the plurality of external connection terminals 200 is composed of a columnar electrode. Note that the external connection terminals 200 are omitted in FIG.

The plurality of external connection terminals 200 includes a first antenna terminal 11, a second antenna terminal 12, one or more ground terminals, a first input terminal 91, a second input terminal 92, a first output terminal 93 and a second output terminal 94. contains. One or more ground terminals are connected to the ground layer of the mounting substrate 100 as described above. The ground layer is the circuit ground of the high frequency module 1, and the plurality of electronic components of the high frequency module 1 include electronic components connected to the ground layer.

The first resin layer 120 covers a plurality of electronic components arranged on the first main surface 101 of the mounting board 100 on the first main surface 101 side of the mounting board 100 . Here, the first resin layer 120 seals a plurality of electronic components arranged on the first main surface 101 of the mounting board 100 . The first resin layer 120 contains resin (for example, epoxy resin). The first resin layer 120 may contain filler in addition to the resin. Note that the first resin layer 120 is omitted in FIG. Furthermore, the second resin layer 125 is omitted in FIG.

The second resin layer 125 is arranged on the second main surface 102 of the mounting board 100 . The second resin layer 125 covers the plurality of electronic components mounted on the second main surface 102 of the mounting substrate 100 and a part of each of the plurality of external connection terminals 200 on the second main surface 102 side of the mounting substrate 100 . ing. The second resin layer 125 is formed so as to expose the tip surface of each of the plurality of external connection terminals 200 . The second resin layer 125 contains resin (for example, epoxy resin). The second resin layer 125 may contain filler in addition to the resin. The material of the second resin layer 125 may be the same material as the material of the first resin layer 120, or may be a different material. Note that the second resin layer 125 is omitted in FIG.

The arrangement relationship of a plurality of electronic components included in the high-frequency module 1 will be described below. Here, a direction orthogonal to the first direction D1 as the thickness direction D1 is defined as a second direction D2 (see FIG. 2), and a direction orthogonal to both the first direction D1 and the second direction is defined as a third direction D3. .

The fifth matching circuit 71 and the first power amplifier 81 are arranged on the first main surface 101 adjacent to each other along the second direction D2. Of the fifth matching circuit 71 and the first power amplifier 81, the fifth matching circuit 71 is arranged closer to the end of the mounting substrate 100 than the first power amplifier 81 in the second direction D2. The sixth matching circuit 72 and the second power amplifier 82 are arranged on the first main surface 101 adjacent to each other along the second direction D2. Of the sixth matching circuit 72 and the second power amplifier 82, the sixth matching circuit 72 is arranged closer to the end of the mounting substrate 100 than the second power amplifier 82 in the second direction D2. When the mounting board 100 is viewed from the third direction D3, the first power amplifier 81 and the second power amplifier 82 are arranged between the fifth matching circuit 71 and the sixth matching circuit 72 (see FIG. 2). Here, "the fifth matching circuit 71 and the first power amplifier 81 are adjacent to each other along the second direction D2" means that the fifth matching circuit 71 and the first power amplifier 81 are located adjacent to each other in the second direction D2. There are no other electronic components in between. Similarly, "the sixth matching circuit 72 and the second power amplifier 82 are adjacent to each other along the second direction D2" means that the sixth matching circuit 72 and the second power amplifier 82 There are no other electronic components in between.

The first transmission filter 61 is arranged on the first main surface 101 so as to be adjacent to the fifth matching circuit 71 along the third direction D3. The first transmission filter 61 overlaps the fifth matching circuit 71 when the mounting board 100 is viewed from the third direction D3. The second transmission filter 62 is arranged on the first main surface 101 so as to be adjacent to the sixth matching circuit 72 along the third direction D3. The second transmission filter 62 overlaps the sixth matching circuit 72 when the mounting substrate 100 is viewed from the third direction D3. Here, "when the mounting substrate 100 is viewed from the third direction D3, the electronic component A overlaps with the electronic component B" means that at least one of the electronic components A The part overlaps with at least a part of the electronic component B.

The first matching chip 50a and the first reception filter 63 are arranged on the first main surface 101 adjacent to each other along the second direction D2. Of the first matching chip 50a and the first receiving filter 63, the first receiving filter 63 is arranged closer to the end of the mounting substrate 100 than the first matching chip 50a in the second direction D2. The second matching chip 50b and the second reception filter 64 are arranged on the first main surface 101 adjacent to each other along the second direction D2. Of the second matching chip 50b and the second receiving filter 64, the second receiving filter 64 is arranged closer to the end of the mounting substrate 100 than the second matching chip 50b in the second direction D2. When the mounting board 100 is viewed from the third direction D3, the first matching chip 50a and the second matching chip 50b are arranged between the first reception filter 63 and the second reception filter 64 (see FIG. 2). When the mounting board 100 is viewed from the third direction D3, the first transmission filter 61 overlaps the first matching chip 50a. When the mounting substrate 100 is viewed from the third direction D3, the second transmission filter 62 overlaps the second matching chip 50b.

The seventh matching circuit 73 is arranged on the first main surface 101 so as to be adjacent to the first reception filter 63 along the third direction D3. The eighth matching circuit 74 is arranged on the first main surface 101 so as to be adjacent to the second reception filter 64 along the third direction D3. A first matching chip 50a and a second matching chip 50b are arranged between the seventh matching circuit 73 and the eighth matching circuit 74 when the mounting substrate 100 is viewed from the third direction D3.

As described above, the switch IC 300 including the first switch 20, the second switch 30, the third switch 40, the first low noise amplifier 83 and the second low noise amplifier 84 is mounted on the second main surface 102 of the mounting substrate 100. there is

The first switch 20, the second switch 30, and the third switch 40 are arranged along the second direction D2 when the mounting board 100 is viewed from the first direction (thickness direction) D1 (see FIG. 3). ). At this time, the first switch 20 is arranged between the second switch 30 and the third switch 40 in plan view from the first direction (thickness direction) D1 of the mounting board 100 . Here, "the first switch 20 is arranged between the second switch 30 and the third switch 40 in plan view from the first direction (thickness direction) D1 of the mounting board 100" means It means that at least one of a plurality of line segments connecting an arbitrary point within the second switch 30 and an arbitrary point within the third switch 40 in plan view of the substrate 100 passes through the area of the first switch 20 .

A first matching chip 50a, a second matching chip 50b, a first reception filter 63, a second reception filter 64, a seventh matching circuit 73, and a second The 8 matching circuit 74 overlaps the switch IC 300 (see FIG. 2).

More specifically, the first matching circuit 51 included in the first matching chip 50a overlaps the second switch 30 when viewed from the first direction D1 of the mounting board 100 in plan view. The second matching circuit 52 included in the second matching chip 50b overlaps the third switch 40 in plan view from the first direction D1 of the mounting board 100 (see FIG. 4).

Also, the first reception filter 63 overlaps the second switch 30 in plan view from the first direction D1 of the mounting board 100 (see FIG. 4). The second reception filter 64 overlaps the third switch 40 in plan view from the first direction D1 of the mounting board 100 (see FIG. 4).

Here, "the electronic component A overlaps the electronic component B when the mounting board 100 is viewed in plan from the first direction D1" means that the mounting board 100 is viewed in plan from the first direction D1 and the electronic component At least part of A overlaps with at least part of electronic component B.

Furthermore, in the present embodiment, the ground path 130 is formed between the second switch 30 and the third switch 40 in the mounting board 100 in a plan view from the first direction D1 of the mounting board 100 . The ground path 130 includes at least one of one or more ground layers and one or more via conductors included in the mounting substrate 100, and is connected to the ground.

(3) Effects As described above, the high-frequency module 1 of the present embodiment includes the first power amplifier 81, the second power amplifier 82, the first switch 20, the second switch 30, and the third switch 40. , and a mounting substrate 100 . The first power amplifier 81 amplifies the first transmission signal of the first frequency band. A second power amplifier 82 amplifies a second transmission signal in a second frequency band different from the first frequency band. The first switch 20 is connected to the antenna terminals (the first antenna terminal 11 and the second antenna terminal 12). The second switch 30 switches connection between the first power amplifier 81 and the first switch 20 . The third switch 40 switches connection between the second power amplifier 82 and the first switch 20 . The mounting board 100 has a first main surface 101 and a second main surface 102 facing each other, and the first power amplifier 81, the second power amplifier 82, the first switch 20, the second switch 30 and the third switch 40 are connected to each other. are placed. The first switch 20, the second switch 30, and the third switch 40 are configured to allow simultaneous connection of the first power amplifier 81 and the second power amplifier 82 to the antenna terminal. The first switch 20 is arranged between the second switch 30 and the third switch 40 in plan view from the thickness direction D<b>1 of the mounting board 100 . The second switch 30 and the third switch 40 are arranged on the same main surface out of the first main surface 101 and the second main surface 102 of the mounting board 100 .

According to this configuration, the first switch 20 is arranged between the second switch 30 and the third switch 40 . As a result, the path from the first switch 20 to the first power amplifier 81 via the second switch 30 is separated from the path from the first switch 20 to the second power amplifier 82 via the third switch 40. be able to. As a result, when transmitting signals in different frequency bands at the same time, it is possible to suppress a decrease in isolation.

When transmitting two transmission signals with different frequency bands at the same time, the two transmission signals may cause IMD (Intermodulation Distortion) on the receiving side.

For example, by transmitting two transmission signals at the same time, new frequency components that are not present in the original two transmission signals are generated. If the new frequency component is included in the frequency band of the signal that passes through at least one of the first receive filter 63 and the second receive filter 64, the new frequency component may pass through the receive filter. Therefore, by separating the path from the first switch 20 to the first power amplifier 81 via the second switch 30 and the path from the first switch 20 to the second power amplifier 82 via the third switch 40, The possibility of two transmitted signals causing IMD to the receiver can be reduced.

(4) Modifications Modifications according to the embodiment will be described below.

(4.1) Modification 1
A high-frequency module 1A according to Modification 1 will be described with reference to FIG. Regarding the high-frequency module 1A according to Modification 1, the same components as those of the high-frequency module 1 according to the embodiment are denoted by the same reference numerals, and the description thereof is omitted as appropriate.

A high-frequency module 1A according to Modification 1 differs from the high-frequency module 1 according to the embodiment in that the external connection terminals as the plurality of external connection terminals 200 are ball bumps 250 . Further, the high frequency module 1A according to Modification 1 is different from the high frequency module 1 according to the embodiment in that the second resin layer 125 of the high frequency module 1 according to the embodiment is not provided. The high-frequency module 1A according to Modification 1 may include an underfill portion provided in the gap between the switch IC 300 and the second main surface 102 of the mounting board 100 .

The material of the ball bumps 250 forming each of the plurality of external connection terminals 200 is, for example, gold, copper, solder, or the like.

The plurality of external connection terminals 200 may include a mixture of external connection terminals 200 configured by ball bumps 250 and external connection terminals 200 configured by columnar electrodes.

Also in Modification 1, it is possible to suppress a decrease in isolation when transmitting signals in different frequency bands at the same time.

(4.2) Modification 2
In the above embodiment, the first switch 20, the second switch 30, and the third switch 40 are configured to be included in the one-chip switch IC 300, but the configuration is not limited to this. The first switch 20, the second switch 30 and the third switch 40 do not have to be integrated into one chip.

When the first switch 20, the second switch 30 and the third switch 40 are not integrated into one chip, at least the second switch 30 and the third switch 40 among the first switch 20, the second switch 30 and the third switch 40 are arranged on the same main surface, namely the first main surface 101 or the second main surface 102 . For example, in the high frequency module 1B according to Modification 2, as shown in FIG. placed. Alternatively, the second switch 30 and the third switch 40 may be arranged on the second major surface 102 and the first switch 20 may be arranged on the first major surface 101 .

Also in Modification 2, the first switch 20, the second switch 30, and the third switch 40 are arranged along the second direction D2 when the mounting board 100 is viewed from the first direction (thickness direction) D1. ing. At this time, the first switch 20 is arranged between the second switch 30 and the third switch 40 in plan view from the first direction (thickness direction) D1 of the mounting board 100 .

(4.3) Modification 3
When the first switch 20, the second switch 30 and the third switch 40 are not integrated into one chip, the second switch 30 and the third switch 40 may be arranged on different main surfaces.

For example, in the high-frequency module 1C according to Modification 3, as shown in FIG. placed. Note that the first switch 20 may be arranged on the first main surface 101 . In the high-frequency module 1C, the first switch 20, the second switch 30, and the third switch 40 are arranged along the second direction D2 when the mounting substrate 100 is viewed from the first direction (thickness direction) D1. may not be arranged along the second direction D2. Similarly, the first switch 20 may be arranged between the second switch 30 and the third switch 40 in plan view from the first direction (thickness direction) D1 of the mounting board 100, or may be arranged between the second switch 30 and the third switch 40. It does not have to be arranged between the second switch 30 and the third switch 40 .

Further, in a high-frequency module 1D according to another example of modification 3, as shown in FIG. 8, the first switch 20 and the second switch 30 are arranged on the second main surface 102, and the third switch 40 It is arranged on the main surface 101 . Note that the first switch 20 may be arranged on the first main surface 101 . In the high-frequency module 1D, the first switch 20, the second switch 30, and the third switch 40 are arranged along the second direction D2 when the mounting substrate 100 is viewed from the first direction (thickness direction) D1. may not be arranged along the second direction D2. Similarly, the first switch 20 may be arranged between the second switch 30 and the third switch 40 in plan view from the first direction (thickness direction) D1 of the mounting board 100, or may be arranged between the second switch 30 and the third switch 40. It does not have to be arranged between the second switch 30 and the third switch 40 .

(4.4) Modification 4
In the high-frequency module 1E according to Modification 4, as shown in FIG. 9, the first matching chip 50a is arranged closer to the end of the mounting substrate 100 than the first reception filter 63 in the second direction D2. , is different from the high-frequency module 1 of the embodiment. Furthermore, in the high-frequency module 1E according to Modification 4, as shown in FIG. 9, the second matching chip 50b is arranged closer to the end of the mounting substrate 100 than the second reception filter 64 in the second direction D2. It is different from the high-frequency module 1 of the embodiment in that respect. Note that the first resin layer 120 is omitted in FIG. 9 .

As described in the embodiment, the first transmission filter 61 is electrically connected to the second switch 30 via (the first matching circuit 51 of) the first matching chip 50a. The second transmission filter 62 is electrically connected to the third switch 40 via (the second matching circuit 52 of) the second matching chip 50b. The first reception filter 63 is electrically connected to the second switch 30 via (the third matching circuit 53 of) the first matching chip 50a.

That is, by setting the arrangement relationship between the first matching chip 50a and the first reception filter 63 as shown in FIG. It is arranged between the path L1 between the switch 30 and the first power amplifier 81 and the path L2 between the third switch 40 and the second power amplifier 82 .

Similarly, by setting the arrangement relationship between the second matching chip 50b and the second reception filter 64 as shown in FIG. 9, the path L4 between the second reception filter 64 and the third switch 40 is , between the path L1 between the second switch 30 and the first power amplifier 81 and the path L2 between the third switch and the second power amplifier.

One of the arrangement relationship between the first matching chip 50a and the first reception filter 63 and the arrangement relationship between the second matching chip 50b and the second reception filter 64 may be the relationship shown in FIG. . That is, the high-frequency module 1E includes a reception filter that is connected to one of the second switch 30 and the third switch 40 and passes the reception signal. In plan view from the thickness direction D1 of the mounting board 100, the path between the receiving filter and the one switch is the path L1 between the second switch 30 and the first power amplifier 81 and the third switch 40. and the path L2 between the second power amplifier 82 and the second power amplifier 82.

According to this configuration, it is possible to suppress a decrease in isolation when transmitting signals in different frequency bands at the same time.

(4.5) Modification 5
In the embodiment, the first reception filter 63 is configured to overlap the second switch 30 in plan view from the first direction D1 of the mounting substrate 100, but the configuration is not limited to this. The first transmission filter 61 may overlap the second switch 30 in plan view of the mounting substrate 100 from the first direction D1. Alternatively, both the first transmission filter 61 and the first reception filter 63 may overlap the second switch 30 in plan view from the first direction D1 of the mounting board 100 . That is, at least one of the first transmission filter 61 and the first reception filter 63 overlaps the second switch 30 in a plan view from the first direction (thickness direction) D1 of the mounting board 100 .

Similarly, in the embodiment, the second reception filter 64 is configured to overlap the third switch 40 in plan view from the first direction D1 of the mounting substrate 100, but is not limited to this configuration. The second transmission filter 62 may overlap the third switch 40 in plan view of the mounting substrate 100 from the first direction D1. Alternatively, both the second transmission filter 62 and the second reception filter 64 may overlap the third switch 40 in plan view from the first direction D1 of the mounting board 100 . That is, at least one of the second transmission filter 62 and the second reception filter 64 overlaps the third switch 40 in a plan view from the first direction (thickness direction) D1 of the mounting board 100 .

(4.6) Modification 6
Modifications are listed below.

Although the switch IC 300 is arranged on the second main surface 102 of the mounting board 100 in the embodiment, the configuration is not limited to this. The switch IC 300 may be arranged on the first main surface 101 .

In the embodiment, the high-frequency module 1 is configured to include a plurality of antenna terminals (first antenna terminal 11, second antenna terminal 12), but is not limited to this configuration. The high-frequency module 1 may be configured to have one antenna terminal. That is, the high-frequency module 1 may transmit a transmission signal in the mid-band frequency band and a transmission signal in the high-band frequency band via one antenna.

In the embodiment, each of the first matching circuit 51, the second matching circuit 52, the third matching circuit 53, and the fourth matching circuit 54 is configured as a chip inductor, but is not limited to this configuration. Each of the first matching circuit 51, the second matching circuit 52, the third matching circuit 53, and the fourth matching circuit 54 may be a conductor such as a pattern, a capacitor, or a circuit combining an inductor and a capacitor. may be Similarly, each of the fifth matching circuit 71, the sixth matching circuit 72, the seventh matching circuit 73, and the eighth matching circuit 74 may be a conductor portion such as a pattern, a capacitor, or an inductor and a capacitor. It may be a combined circuit.

(summary)
As described above, the high-frequency module (1; 1A; 1B; 1E) of the first aspect includes a first power amplifier (81), a second power amplifier (82), a first switch (20), It comprises a second switch (30), a third switch (40) and a mounting substrate (100). A first power amplifier (81) amplifies a first transmission signal in a first frequency band. A second power amplifier (82) amplifies a second transmission signal in a second frequency band different from the first frequency band. The first switch (20) is connected to the antenna terminals (first antenna terminal 11, second antenna terminal 12). The second switch (30) switches connection between the first power amplifier (81) and the first switch (20). The third switch (40) switches connection between the second power amplifier (82) and the first switch (20). A mounting substrate (100) has a first main surface (101) and a second main surface (102) facing each other, and includes a first power amplifier (81), a second power amplifier (82), a first switch (20 ), a second switch (30) and a third switch (40) are arranged. The first switch (20), the second switch (30) and the third switch (40) are configured to allow simultaneous connection of the first power amplifier (81) and the second power amplifier (82) to the antenna terminal. . The first switch (20) is arranged between the second switch (30) and the third switch (40) in plan view from the thickness direction (D1) of the mounting substrate (100). The second switch (30) and the third switch (40) are arranged on the same main surface out of the first main surface (101) and the second main surface (102) of the mounting substrate (100).

The high frequency module (1C; 1D) of the second aspect includes a first power amplifier (81), a second power amplifier (82), a first switch (20), a second switch (30), a third A switch (40) and a mounting board (100) are provided. A first power amplifier (81) amplifies a first transmission signal in a first frequency band. A second power amplifier (82) amplifies a second transmission signal in a second frequency band different from the first frequency band. The first switch (20) is connected to the antenna terminals (first antenna terminal 11, second antenna terminal 12). The second switch (30) switches connection between the first power amplifier (81) and the first switch (20). The third switch (40) switches connection between the second power amplifier (82) and the first switch (20). A mounting substrate (100) has a first main surface (101) and a second main surface (102) facing each other, and includes a first power amplifier (81), a second power amplifier (82), a first switch (20 ), a second switch (30) and a third switch (40) are arranged. The first switch (20), the second switch (30) and the third switch (40) are configured to allow simultaneous connection of the first power amplifier (81) and the second power amplifier (82) to the antenna terminal. . The second switch (30) and the third switch (40) are arranged on different main surfaces of the first main surface (101) and the second main surface (102) of the mounting substrate (100).

According to this configuration, the path from the first switch (20) through the second switch (30) to the first power amplifier (81) and the first switch (20) through the third switch (40) 2 can be separated from the path to the power amplifier (82). As a result, when transmitting signals in different frequency bands at the same time, it is possible to suppress a decrease in isolation.

In the high-frequency module (1; 1A; 1B; 1E) of the third aspect, in the first aspect, the first switch (20) is provided with the second switch (30) and the third switch (40) on the mounting board (100). ) are arranged on the same principal plane as above.

According to this configuration, the wiring length between the first switch (20) and the second switch (30) and the wiring length between the first switch (20) and the second switch (30) can be shortened.

The radio frequency module (1:1A; 1B; 1E) of the fourth aspect further comprises a plurality of external connection terminals (200) arranged on the second main surface (102) in the third aspect. The first switch (20), the second switch (30) and the third switch (40) are arranged on the second main surface (102) of the mounting substrate (100).

According to this configuration, the mounting board (100) can be miniaturized.

The high-frequency module (1:1A; 1B; 1E) of the fifth aspect has the first switch (20), the second switch (30) and the third switch (40) integrated into one chip in the fourth aspect. ing.

According to this configuration, the mounting board (100) can be miniaturized.

The high frequency module (1:1A; 1B; 1E) of the sixth aspect further comprises a first transmission filter (61) and a first matching circuit (51) in the fourth or fifth aspect. The first transmission filter (61) passes the first transmission signal output from the first power amplifier (81). A first matching circuit (51) provides impedance matching between the first transmission filter (61) and the second switch (30). A first transmission filter (61) and a first matching circuit (51) are arranged on a first main surface (101) of a mounting substrate (100). The first matching circuit (51) overlaps the second switch (30) in plan view from the thickness direction (D1) of the mounting substrate (100).

According to this configuration, the path length between the second switch (30) and the first matching circuit (51) can be shortened.

The high frequency module (1:1A; 1B; 1E) of the seventh aspect comprises the first reception filter (63) in the sixth aspect. The first reception filter (63) is connected to the second switch (30) and passes the first reception signal. The first reception filter (63) is arranged on the first main surface (101) of the mounting substrate (100). At least one of the first transmission filter (61) and the first reception filter (63) overlaps the second switch (30) in plan view from the thickness direction (D1) of the mounting board (100). .

According to this configuration, the path length between the second switch (30) and the one filter can be shortened.

The high-frequency module (1:1A; 1B; 1E) of the eighth aspect further comprises a second transmission filter (62) and a second matching circuit (52) in any one of the fourth to seventh aspects. Prepare. The second transmission filter (62) passes the second transmission signal output from the second power amplifier (82). A second matching circuit (52) provides impedance matching between the second transmit filter (62) and the third switch (40). The second transmission filter (62) and the second matching circuit (52) are arranged on the first main surface (101) of the mounting substrate (100). The second matching circuit (52) overlaps the third switch (40) in plan view from the thickness direction (D1) of the mounting substrate (100).

According to this configuration, the path length between the third switch (40) and the second matching circuit (52) can be shortened.

The high-frequency module (1:1A; 1B; 1E) of the ninth aspect comprises the second reception filter (64) in the eighth aspect. A second receive filter (64) is connected to the third switch (40) and passes the second receive signal. The second reception filter (64) is arranged on the first main surface (101) of the mounting substrate (100). At least one of the second transmission filter (62) and the second reception filter (64) overlaps the third switch (40) in plan view from the thickness direction (D1) of the mounting substrate (100). .

According to this configuration, the path length between the third switch (40) and the one filter can be shortened.

In the high-frequency module (1:1A; 1B; 1C; 1D; 1E) of the tenth aspect, in any one of the first to ninth aspects, in the mounting substrate (100), in the thickness direction of the mounting substrate (100) In plan view from (D1), a path (for example, ground path 130) connected to the ground is formed between the second switch (30) and the third switch (40).

According to this configuration, a path connected to the ground is provided between the second switch (30) and the third switch (40) in plan view from the thickness direction (D1) of the mounting substrate (100). , it is possible to suppress a decrease in isolation when transmission signals in different frequency bands are transmitted at the same time.

The high-frequency module (1:1A; 1B; 1C; 1D; 1E) of the eleventh aspect includes a reception filter (first reception filter 63, second reception filter 64) in any one of the first to tenth aspects , prepare more. The reception filter is connected to one of the second switch (30) and the third switch (40) to pass the reception signal. In a plan view from the thickness direction (D1) of the mounting substrate (100), the paths (path L3, path L4) between the receiving filter and the one switch are the second switch (30) and the first power switch (30). It is arranged between the path (L1) between the amplifier (81) and the path (L2) between the third switch (40) and the second power amplifier (82).

According to this configuration, the path (L1) between the second switch (30) and the first power amplifier (81) and the path (L2) between the third switch (40) and the second power amplifier (82) and the paths of received signals (paths L3 and L4) are arranged. Therefore, the path (L1) between the second switch (30) and the first power amplifier (81) and the path (L2) between the third switch (40) and the second power amplifier (82) are separated. be able to. As a result, when transmitting signals in different frequency bands at the same time, it is possible to suppress a decrease in isolation.

A communication device (500) according to a twelfth aspect comprises the radio frequency module (1:1A; 1B; 1C; 1D; 1E) according to any one of the first to eleventh aspects and a signal processing circuit (501). . A signal processing circuit (501) processes the first transmission signal and the second transmission signal passing through the high frequency modules (1:1A; 1B; 1C; 1D; 1E).

1, 1A, 1B, 1C, 1D, 1E high frequency module 11 first antenna terminal (antenna terminal)
12 second antenna terminal (antenna terminal)
20 first switch 21 first terminal 22 second terminal 23 third terminal 24 fourth terminal 30 second switch 31

common terminal

32, 33, 34 selection terminal 40 third switch 41

common terminal

42, 43, 44 selection terminal 50a 1 matching chip 50b 2nd matching chip 51 1st matching circuit 52 2nd matching circuit 53 3rd matching circuit 54 4th matching circuit 61 1st transmission filter 62 2nd transmission filter 63 1st reception filter 64 2nd reception filter 71 th 5 matching circuit 72 sixth matching circuit 73 seventh matching circuit 74 eighth matching circuit 81 first power amplifier 82 second power amplifier 83 first low noise amplifier 84 second low noise amplifier 91 first input terminal 92 second input terminal 93 1 output terminal 94 second output terminal 100 mounting board 101 first main surface 102 second main surface 120 first resin layer 125 second resin layer 130 ground path 200 external connection terminal 250 ball bump 300 switch IC
500 communication device 501 signal processing circuit 502 RF signal processing circuit 503 baseband signal processing circuit 511 first antenna 512 second antenna D1 first direction (thickness direction)
D2 Second direction D3 Third direction L1, L2, L3, L4 Path

Claims

a first power amplifier that amplifies a first transmission signal in a first frequency band;
a second power amplifier that amplifies a second transmission signal in a second frequency band different from the first frequency band;
a first switch connected to the antenna terminal;
a second switch that switches connection between the first power amplifier and the first switch;
a third switch that switches connection between the second power amplifier and the first switch;
a mounting substrate having a first main surface and a second main surface facing each other, and on which the first power amplifier, the second power amplifier, the first switch, the second switch and the third switch are arranged; , and
the first switch, the second switch, and the third switch are configured to allow simultaneous connection of the first power amplifier and the second power amplifier to the antenna terminal;
The first switch is arranged between the second switch and the third switch in plan view from the thickness direction of the mounting substrate,
The second switch and the third switch are arranged on the same main surface out of the first main surface and the second main surface of the mounting substrate,
high frequency module.
a first power amplifier that amplifies a first transmission signal in a first frequency band;
a second power amplifier that amplifies a second transmission signal in a second frequency band different from the first frequency band;
a first switch connected to the antenna terminal;
a second switch that switches connection between the first power amplifier and the first switch;
a third switch that switches connection between the second power amplifier and the first switch;
a mounting substrate having a first main surface and a second main surface facing each other, and on which the first power amplifier, the second power amplifier, the first switch, the second switch and the third switch are arranged; , and
the first switch, the second switch, and the third switch are configured to allow simultaneous connection of the first power amplifier and the second power amplifier to the antenna terminal;
The second switch and the third switch are arranged on different main surfaces of the first main surface and the second main surface of the mounting substrate,
high frequency module.
The first switch is arranged on the same main surface on which the second switch and the third switch are arranged on the mounting substrate,
The high frequency module according to claim 1.
further comprising a plurality of external connection terminals arranged on the second main surface,
The first switch, the second switch, and the third switch are arranged on the second main surface of the mounting substrate,
The high frequency module according to claim 3.
The first switch, the second switch and the third switch are integrated into one chip,
The high frequency module according to claim 4.
a first transmission filter that passes the first transmission signal output from the first power amplifier;
a first matching circuit for impedance matching between the first transmission filter and the second switch;
The first transmission filter and the first matching circuit are arranged on the first main surface of the mounting substrate,
The first matching circuit overlaps the second switch in plan view from the thickness direction of the mounting substrate.
The high frequency module according to claim 4 or 5.
further comprising a first reception filter connected to the second switch and passing the first reception signal;
The first reception filter is arranged on the first main surface of the mounting substrate,
At least one of the first transmission filter and the first reception filter overlaps the second switch in plan view from the thickness direction of the mounting substrate.
The high frequency module according to claim 6.
a second transmission filter that passes the second transmission signal output from the second power amplifier;
a second matching circuit for impedance matching between the second transmission filter and the third switch;
The second transmission filter and the second matching circuit are arranged on the first main surface of the mounting substrate,
The second matching circuit overlaps the third switch in plan view from the thickness direction of the mounting substrate,
A high-frequency module according to any one of claims 4 to 7.
further comprising a second receive filter connected to the third switch and passing a second receive signal;
The second reception filter is arranged on the first main surface of the mounting substrate,
At least one of the second transmission filter and the second reception filter overlaps the third switch in plan view from the thickness direction of the mounting substrate,
The high frequency module according to claim 8.
In the mounting board, a path connected to ground is formed between the second switch and the third switch in plan view from the thickness direction of the mounting board.
A high-frequency module according to any one of claims 1 to 9.
further comprising a reception filter connected to one of the second switch and the third switch and passing a reception signal;
In a plan view from the thickness direction of the mounting substrate, the path between the receiving filter and the one switch is the path between the second switch and the first power amplifier, the path between the third switch and the arranged between the path to and from the second power amplifier,
The high frequency module according to any one of claims 1-10.
The high frequency module according to any one of claims 1 to 11;
a signal processing circuit that processes the first transmission signal and the second transmission signal passing through the high frequency module;
Communication device.