WO2022145412A1

WO2022145412A1 - High frequency module and communication apparatus

Info

Publication number: WO2022145412A1
Application number: PCT/JP2021/048495
Authority: WO
Inventors: 正英武部; ▲琢▼真黒▲柳▼
Original assignee: 株式会社村田製作所
Priority date: 2020-12-28
Filing date: 2021-12-27
Publication date: 2022-07-07

Abstract

The present invention decreases the size of a high frequency module. A high frequency module (200) is provided with a mounting substrate (9), a first electronic component (1), a second electronic component (2), and a third electronic component (3). The first electronic component (1) includes a first transmission filter (51) and a second transmission filter (52). The first electronic component (1) has a substrate common to the first transmission filter (51) and the second transmission filter (52). The second electronic component (2) includes a third transmission filter (53). The third electronic component (3) includes a first reception filter (61), a second reception filter (62), and a third reception filter (63). The third electronic component (3) has a substrate common to the first reception filter (61), the second reception filter (62), and the third reception filter (63).

Description

High frequency module and communication equipment

The present invention generally relates to a high frequency module and a communication device, and more particularly to a high frequency module including a mounting board and a communication device including the high frequency module.

Patent Document 1 discloses a high-frequency module including a mounting board, two transmission filters mounted on the main surface of the mounting board, and two receiving filters mounted on the main surface of the mounting board. There is.

International Publication No. 2019/181590

In the high frequency module disclosed in Patent Document 1, the number of parts of each of the transmission filter and the reception filter increases with the recent multi-banding of mobile communication devices such as mobile phones, for example, the number of each of the transmission filter and the reception filter increases. When the number is 3 or more, there is a problem that the high frequency module becomes large.

An object of the present invention is to provide a high frequency module and a communication device capable of miniaturization.

The high frequency module according to one aspect of the present invention includes a mounting board, a first electronic component, a second electronic component, and a third electronic component. The mounting board has a first main surface and a second main surface facing each other. The first electronic component is mounted on the first main surface of the mounting board. The second electronic component is mounted on the mounting board. The third electronic component is mounted on the mounting board. The first electronic component includes a first transmission filter and a second transmission filter. The first transmission filter has a pass band including the transmission band of the first communication band. The second transmission filter has a pass band including a transmission band of a second communication band different from the first communication band. The first electronic component has a substrate common to the first transmission filter and the second transmission filter. The second electronic component includes a third transmission filter. The third transmission filter has a pass band including a transmission band of the third communication band. The third communication band is different from the first communication band and the second communication band. The third electronic component includes a first reception filter, a second reception filter, and a third reception filter. The first reception filter has a pass band including the reception band of the first communication band. The second reception filter has a pass band including the reception band of the second communication band. The third reception filter has a pass band including the reception band of the third communication band. The third electronic component has a substrate common to the first receiving filter, the second receiving filter, and the third receiving filter.

The communication device according to one aspect of the present invention includes the high frequency module and a signal processing circuit. The signal processing circuit is connected to the high frequency module.

The high frequency module and communication device according to the above aspect of the present invention can be miniaturized.

FIG. 1 is a plan view of the high frequency module according to the first embodiment. FIG. 2 is a plan view of the same high frequency module. FIG. 3 shows the high frequency module of the same as above, and is a sectional view taken along line XX of FIG. FIG. 4 shows the high frequency module of the same as above, and is a sectional view taken along line YY of FIG. FIG. 5 is a perspective view of the same high-frequency module as seen through the first transmission filter, the second transmission filter, and the plurality of first external terminals from the main surface of the first electronic component on the side opposite to the mounting board side. .. FIG. 6 is a cross-sectional view of the first electronic component in the same high frequency module. FIG. 7 is a cross-sectional view of the second electronic component in the same high frequency module. FIG. 8 is a cross-sectional view of the third electronic component in the same high frequency module. FIG. 9 is a circuit configuration diagram of a communication device including the same high frequency module. FIG. 10 is a cross-sectional view of another example 1 of the first electronic component in the same high frequency module. FIG. 11 is a cross-sectional view of another example 2 of the first electronic component in the same high frequency module. FIG. 12 is a cross-sectional view of another example 2 of the second electronic component in the same high frequency module. FIG. 13 is a cross-sectional view of another example 2 of the third electronic component in the same high frequency module. FIG. 14 is a plan view of the high frequency module according to the second embodiment. FIG. 15 is a plan view of the high frequency module according to the third embodiment. FIG. 16 is a cross-sectional view of the high frequency module according to the fourth embodiment. FIG. 17 is another cross-sectional view of the same high frequency module.

FIGS. 1 to 8 and 10 to 17 referred to in the following embodiments and the like are schematic views, and the ratio of the size and the thickness of each component in the figure does not necessarily reflect the actual dimensional ratio. Not always.

(Embodiment 1)
The high-frequency module 200 according to the first embodiment includes, for example, a mounting board 9, a first electronic component 1, a second electronic component 2, and a third electronic component 3, as shown in FIGS. 1 to 4. The mounting board 9 has a first main surface 91 and a second main surface 92 facing each other. The first electronic component 1 is mounted on the first main surface 91 of the mounting board 9. The second electronic component 2 is mounted on the first main surface 91 of the mounting board 9. The third electronic component 3 is mounted on the first main surface 91 of the mounting board 9. The first electronic component 1 includes a first transmission filter 51 (hereinafter, also referred to as a first transmission filter 51) and a transmission filter 52 (hereinafter, also referred to as a second transmission filter 52). The first transmission filter 51 has a pass band including the transmission band of the first communication band. The second transmission filter 52 has a pass band including a transmission band of a second communication band different from the first communication band. The second electronic component 2 includes a transmission filter 53 (hereinafter, also referred to as a third transmission filter 53). The third transmission filter 53 has a pass band including the transmission band of the third communication band. The third communication band is different from the first communication band and the second communication band. The third electronic component 3 includes a reception filter 61 (hereinafter, also referred to as a first reception filter 61), a reception filter 62 (hereinafter, also referred to as a second reception filter 62), and a reception filter 63 (hereinafter, a third reception filter 63). Also called), including. The first reception filter 61 has a pass band including the reception band of the first communication band. The second reception filter 62 has a pass band including the reception band of the second communication band. The third reception filter 63 has a pass band including the reception band of the third communication band.

Further, the high frequency module 200 further includes a resin layer 170 (hereinafter, also referred to as a first resin layer 170) and a shield layer 180 (see FIGS. 3 and 4). The first resin layer 170 is arranged on the first main surface 91 of the mounting substrate 9. The resin layer 170 covers the outer peripheral surface 13 of the first electronic component 1, the outer peripheral surface 23 of the second electronic component 2, and the outer peripheral surface 33 of the third electronic component 3. The shield layer 180 covers the first resin layer 170. The shield layer 180 overlaps each of the first electronic component 1, the second electronic component 2, and the third electronic component 3 in a plan view from the thickness direction D1 of the mounting substrate 9.

Further, the high frequency module 200 further includes a fourth electronic component 4 (see FIGS. 2 to 4). The fourth electronic component 4 is mounted on the second main surface 92 of the mounting board 9.

Further, the high frequency module 200 further includes a second resin layer 190 (see FIGS. 3 and 4). The second resin layer 190 is arranged on the second main surface 92 of the mounting substrate 9. The second resin layer 190 covers the outer peripheral surface 43 of the fourth electronic component 4.

Hereinafter, the high frequency module 200 and the communication device 300 according to the first embodiment will be described in more detail with reference to FIGS. 1 to 9.

(1) High Frequency Module and Communication Device (1.1) Circuit Configuration of High Frequency Module and Communication Device The circuit configuration of the high frequency module 200 and communication device 300 according to the first embodiment will be described with reference to FIG.

The high frequency module 200 is used, for example, in the communication device 300. The communication device 300 is, for example, a mobile phone (for example, a smartphone), but is not limited to this, and may be, for example, a wearable terminal (for example, a smart watch). The high frequency module 200 is a module capable of supporting, for example, a 4G (4th generation mobile communication) standard, a 5G (5th generation mobile communication) standard, and the like. The 4G standard is, for example, a 3GPP (Third Generation Partnership Project) LTE (Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The high frequency module 200 is a module capable of supporting carrier aggregation and dual connectivity, for example. The high frequency module 200 can also support two uplink carrier aggregations that simultaneously use two frequency bands in the uplink.

The high frequency module 200 is configured so that, for example, the transmission signal input from the signal processing circuit 301 can be amplified and output to the antenna 310. Further, the high frequency module 200 is configured to amplify the received signal input from the antenna 310 and output it to the signal processing circuit 301. The signal processing circuit 301 is not a component of the high frequency module 200, but a component of the communication device 300 including the high frequency module 200. The high frequency module 200 according to the first embodiment is controlled by, for example, a signal processing circuit 301 included in the communication device 300. The communication device 300 includes a high frequency module 200 and a signal processing circuit 301. The communication device 300 further includes an antenna 310. The communication device 300 further includes a circuit board on which the high frequency module 200 is mounted. The circuit board is, for example, a printed wiring board. The circuit board has a ground electrode to which a ground potential is applied.

The signal processing circuit 301 includes, for example, an RF signal processing circuit 302 and a baseband signal processing circuit 303. The RF signal processing circuit 302 is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on a high frequency signal. The RF signal processing circuit 302 performs signal processing such as up-conversion on the high frequency signal (transmission signal) output from the baseband signal processing circuit 303, and outputs the signal processed high frequency signal. Further, the RF signal processing circuit 302 performs signal processing such as down-conversion on the high frequency signal (received signal) output from the high frequency module 200, and uses the processed high frequency signal as a baseband signal processing circuit. Output to 303. The baseband signal processing circuit 303 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 303 generates an I-phase signal and a Q-phase signal from the baseband signal. The baseband signal is, for example, an audio signal, an image signal, or the like input from the outside. The baseband signal processing circuit 303 performs IQ modulation processing by synthesizing an I-phase signal and a Q-phase signal, and outputs a transmission signal. At this time, the transmission signal is generated as a modulation signal (IQ signal) in which a carrier signal having a predetermined frequency is amplitude-modulated with a period longer than the period of the carrier signal. The received signal processed by the baseband signal processing circuit 303 is used, for example, for displaying an image as an image signal or for a call of a user of the communication device 300 as an audio signal. The high frequency module 200 transmits a high frequency signal (received signal, transmitted signal) between the antenna 310 and the RF signal processing circuit 302 of the signal processing circuit 301.

The high frequency module 200 includes a plurality of (for example, four) transmission filters 51 to 54 and a plurality of (for example, nine) reception filters 61 to 69. Further, the high frequency module 200 includes a plurality of (for example, two)

power amplifiers

71 and 72, and a plurality of (for example, two)

output matching circuits

131 and 132. Further, the high frequency module 200 includes a plurality of (for example, nine) low noise amplifiers 81 to 89, and a plurality of inductors L1 to L9 included in a plurality of (for example, nine) input matching circuits. Further, the high frequency module 200 includes a first switch 104, a second switch 105, and a third switch 106. Further, the high frequency module 200 further includes a plurality of (for example, nine) inductors L11 to L19.

Further, the high frequency module 200 is provided with a plurality of external connection terminals T0. The plurality of external connection terminals T0 include an antenna terminal T1, two signal input terminals T2 and T3, a signal output terminal T4, and a plurality of ground terminals T5 (see FIGS. 3 and 4). The plurality of ground terminals T5 are terminals that are electrically connected to the ground electrode of the above-mentioned circuit board included in the communication device 300 and are given a ground potential.

Hereinafter, the circuit configuration of the high frequency module 200 will be described in more detail with reference to FIG.

The plurality (4) transmission filters 51 to 54 are transmission filters having different frequency bands as pass bands. Hereinafter, the transmission filter 54 is also referred to as a fourth transmission filter 54. In FIG. 9, in order to make it easy to understand that the pass band of the first transmission filter 51 corresponds to the transmission band (1920 MHz-1980 MHz) of Band 1 of the 3GPP LTE standard, it is on the left side of the graphic symbol of the first transmission filter 51. , "B1Tx". Similarly, in FIG. 9, in order to make it easy to understand that the second transmission filter 52 corresponds to the band 3 transmission band (1710 MHz-1785 MHz) of the 3GPP LTE standard, on the left side of the graphic symbol of the second transmission filter 52. , "B3Tx" is written. Similarly, in FIG. 9, it is easy to understand that the third transmission filter 53 corresponds to the 3GPP LTE standard Band 66 transmission band (1710 MHz-1780 MHz) and the 5G NR standard n70 transmission band (1695 MHz-1710 MHz). Therefore, "B66Tx / 70" is written on the left side of the graphic symbol of the third transmission filter 53. Similarly, in FIG. 9, in order to make it easy to understand that the 4th transmission filter 54 corresponds to the communication band (2494MHz-2690MHz) of Band 41 of the 3GPP LTE standard, on the left side of the graphic symbol of the 4th transmission filter 54. It is written as "B41T". In the high frequency module 200, the first communication band is Band 1 of the 3GPP LTE standard, the second communication band is Band 3 of the 3GPP LTE standard, and the third communication band is Band 66 of the 3GPP LTE standard.

The plurality (9) reception filters 61 to 69 are reception filters having different frequency bands as pass bands. In the following, the reception filter 64, the reception filter 65, the reception filter 66, the reception filter 67, the reception filter 68, and the reception filter 69 are, respectively, the fourth reception filter 64, the fifth reception filter 65, the sixth reception filter 66, and the seventh. It may be referred to as a reception filter 67, an eighth reception filter 68, and a ninth reception filter 69. In FIG. 9, in order to make it easy to understand that the pass band of the first reception filter 61 corresponds to the reception band (2110MHz-2170MHz) of Band 1 of the 3GPP LTE standard, it is on the left side of the graphic symbol of the first reception filter 61. , "B1Rx". Similarly, in FIG. 9, in order to make it easy to understand that the second reception filter 62 corresponds to the reception band (1805 MHz-1880 MHz) of Band 3 of the 3GPP LTE standard, on the left side of the graphic symbol of the second reception filter 62. , "B3Rx". Similarly, in FIG. 9, in order to make it easy to understand that the third reception filter 63 corresponds to the reception band (2110MHz-2200MHz) of Band 66 of the 3GPP LTE standard, it is on the left side of the graphic symbol of the third reception filter 63. , "B66Rx". Similarly, in FIG. 9, it is easy to understand that the fourth reception filter 64 corresponds to the communication band of Band 25 of the 3GPP LTE standard (1930 MHz-1995 MHz) and the communication band of Band 70 of the 3GPP LTE standard (1995 MHz-2020 MHz). Therefore, "B25 / 70" is written on the left side of the graphic symbol of the fourth reception filter 64. Similarly, in FIG. 9, in order to make it easy to understand that the fifth reception filter 65 corresponds to the reception band (1452 MHz-1496 MHz) of Band 32 of the 3GPP LTE standard, on the left side of the graphic symbol of the fifth reception filter 65. , "B32". Similarly, in FIG. 9, in order to make it easy to understand that the 6th reception filter 66 corresponds to the communication band (2300MHz-2400MHz) of the Band 40 of the 3GPP LTE standard, it is on the left side of the graphic symbol of the 6th reception filter 66. , "B40" is written. Similarly, in FIG. 9, in order to make it easy to understand that the 7th reception filter 67 corresponds to the reception band (2350MHz-2360MHz) of the Band 30 of the 3GPP LTE standard, on the left side of the graphic symbol of the 7th reception filter 67. , "B30". Similarly, in FIG. 9, in order to make it easy to understand that the 8th reception filter 68 corresponds to the reception band (2620MHz-2690MHz) of Band 7 of the 3GPP LTE standard, on the left side of the graphic symbol of the 8th reception filter 68. , "B7" is written. Similarly, in FIG. 9, in order to make it easy to understand that the 9th reception filter 69 corresponds to the communication band (2494MHz-2690MHz) of Band 41 of the 3GPP LTE standard, on the left side of the graphic symbol of the 9th reception filter 69. , "B41R" is written.

The power amplifier 71 (hereinafter, also referred to as a first power amplifier 71) has a first input terminal and a first output terminal. The first power amplifier 71 amplifies the transmission signal input to the first input terminal and outputs it from the first output terminal. The first input terminal of the first power amplifier 71 is connected to the signal input terminal T2. The first input terminal of the first power amplifier 71 is connected to the signal processing circuit 301 via the signal input terminal T2. The signal input terminal T2 is a terminal for inputting a high frequency signal (transmission signal) from an external circuit (for example, a signal processing circuit 301) to the high frequency module 200. In the high frequency module 200, the first output terminal of the first power amplifier 71 and the fourth transmission filter 54 are connected via an output matching circuit 131 (hereinafter, also referred to as a first output matching circuit 131). The first power amplifier 71 is a multi-stage amplifier including, for example, a driver stage amplifier and a final stage amplifier. In the first power amplifier 71, the input terminal of the driver stage amplifier is connected to the signal input terminal T2, the output terminal of the driver stage amplifier is connected to the input terminal of the final stage amplifier, and the output terminal of the final stage amplifier is the first output matching. It is connected to the circuit 131. The first power amplifier 71 is not limited to the multi-stage amplifier, and may be, for example, a common mode synthesis amplifier, a differential synthesis amplifier, or a Doherty amplifier.

The power amplifier 72 (hereinafter, also referred to as a second power amplifier 72) has a second input terminal and a second output terminal. The second power amplifier 72 amplifies the transmission signal input to the second input terminal and outputs it from the second output terminal. The second input terminal of the second power amplifier 72 is connected to the signal input terminal T3. The second input terminal of the second power amplifier 72 is connected to the signal processing circuit 301 via the signal input terminal T3. The signal input terminal T3 is a terminal for inputting a high frequency signal (transmission signal) from an external circuit (for example, a signal processing circuit 301) to the high frequency module 200. In the high-frequency module 200, the second output terminal of the second power amplifier 72 and the first transmission filter 51, the second transmission filter 52, and the third transmission filter 53 form an output matching circuit 132 (hereinafter referred to as a second output matching circuit 132). It is also possible to connect via the second switch 105. The second power amplifier 72 is a multi-stage amplifier including, for example, a driver stage amplifier and a final stage amplifier. In the second power amplifier 72, the input terminal of the driver stage amplifier is connected to the signal input terminal T3, the output terminal of the driver stage amplifier is connected to the input terminal of the final stage amplifier, and the output terminal of the final stage amplifier is the second output matching. It is connected to the circuit 132. The second power amplifier 72 is not limited to the multi-stage amplifier, and may be, for example, an in-phase synthesis amplifier, a differential synthesis amplifier, or a Doherty amplifier.

The two

power amplifiers

71 and 72 correspond to different power classes. The "power class" is a classification (User Equipment Power Class) of the output power of the terminal (communication device 300) defined by the maximum output power, etc., and the smaller the number listed next to the "power class", the higher the classification. Indicates that it corresponds to the output power. For example, the maximum output power (29 dBm) of the power class 1 is larger than the maximum output power (26 dBm) of the power class 2, and the maximum output power (26 dBm) of the power class 2 is larger than the maximum output power (23 dBm) of the power class 3. The measurement of the maximum output power is performed by a method specified by, for example, 3GPP or the like. The first power amplifier 71 corresponds to the first power class (for example, power class 2), and the second power amplifier 72 corresponds to the second power class (for example, power class 3) having a smaller maximum output power than the first power class. There is. The high frequency module 200 may further include a controller. The controller controls, for example, the first power amplifier 71 and the second power amplifier 72 according to the control signal from the signal processing circuit 301.

The first output matching circuit 131 is provided in the signal path between the first output terminal of the first power amplifier 71 and the fourth transmission filter 54. The first output matching circuit 131 is a circuit for achieving impedance matching between the first power amplifier 71 and the fourth transmission filter 54. The first output matching circuit 131 includes, for example, a first inductor connected between the first output terminal of the first power amplifier 71 and the fourth transmission filter 54. The first output matching circuit 131 may include, for example, a plurality of inductors and a plurality of capacitors.

The second output matching circuit 132 is provided in the signal path between the second output terminal of the second power amplifier 72 and the second switch 105. The second output matching circuit 132 is a circuit for impedance matching between the second power amplifier 72 and the first transmission filter 51, the second transmission filter 52, and the third transmission filter 53. The second output matching circuit 132 includes, for example, a second inductor connected between the second output terminal of the second power amplifier 72 and the second switch 105. The second output matching circuit 132 may include, for example, a plurality of inductors and a plurality of capacitors.

Each of the plurality of low noise amplifiers 81 to 89 has an input terminal and an output terminal. Each of the plurality of low noise amplifiers 81 to 89 amplifies the received signal input to the input terminal and outputs it from the output terminal. The plurality of low noise amplifiers 81 to 89 are connected one-to-one to the plurality of reception filters 61 to 69. The input terminal of the low noise amplifier 81 is connected to the first reception filter 61 via an input matching circuit including the inductor L1 among the plurality of input matching circuits. The input terminal of the low noise amplifier 82 is connected to the second reception filter 62 via an input matching circuit including the inductor L2 among the plurality of input matching circuits. The input terminal of the low noise amplifier 83 is connected to the third reception filter 63 via an input matching circuit including the inductor L3 among the plurality of input matching circuits. The input terminal of the low noise amplifier 84 is connected to the fourth reception filter 64 via an input matching circuit including the inductor L4 among the plurality of input matching circuits. The input terminal of the low noise amplifier 85 is connected to the fifth reception filter 65 via an input matching circuit including the inductor L5 among the plurality of input matching circuits. The input terminal of the low noise amplifier 86 is connected to the sixth reception filter 66 via an input matching circuit including an inductor L6 among a plurality of input matching circuits. The input terminal of the low noise amplifier 87 is connected to the seventh reception filter 67 via an input matching circuit including the inductor L7 among the plurality of input matching circuits. The input terminal of the low noise amplifier 88 is connected to the eighth reception filter 68 via an input matching circuit including the inductor L8 among the plurality of input matching circuits. The input terminal of the low noise amplifier 89 is connected to the ninth reception filter 69 via an input matching circuit including the inductor L9 among the plurality of input matching circuits. The output terminals of the plurality of low noise amplifiers 81 to 89 can be connected to the signal output terminal T4 via the third switch 106. The output terminals of the plurality of low noise amplifiers 81 to 89 are connected to the signal processing circuit 301 via, for example, the third switch 106 and the signal output terminal T4. The signal output terminal T4 is a terminal for outputting a high frequency signal (received signal) from the low noise amplifiers 81 to 89 to an external circuit (for example, a signal processing circuit 301).

The plurality of input matching circuits are circuits for achieving impedance matching between the plurality of low noise amplifiers 81 to 89 and the plurality of receiving filters 61 to 69.

The first switch 104 has a common terminal 140 and a plurality of (for example, six) selection terminals 141 to 146. In the first switch 104, the common terminal 140 is connected to the antenna terminal T1. The high frequency module 200 is not limited to the case where the common terminal 140 and the antenna terminal T1 are connected without interposing other circuit elements, and may be connected, for example, via a low-pass filter and a coupler. The selection terminal 141 is connected to the connection point between the output terminal of the third transmission filter 53, the input terminal of the third reception filter 63, and the input terminal of the fourth reception filter 64 via a matching circuit including the inductor L11. .. The selection terminal 142 has an inductor L12 and an inductor at the connection points between the output terminal of the first transmission filter 51, the output terminal of the second transmission filter 52, the input terminal of the second reception filter 62, and the input terminal of the fifth reception filter 65. It is connected via a matching circuit including L13. Further, the selection terminal 142 is connected to the input terminal of the first reception filter 61. Further, the selection terminal 142 is connected to the input terminal of the sixth reception filter 66 via a matching circuit including the inductor L14. The selection terminal 143 is connected to the input terminal of the seventh reception filter 67. The selection terminal 144 is connected to the input terminal of the eighth receive filter 68 via a matching circuit including the inductor L15. The selection terminal 145 is connected to the input terminal of the ninth reception filter 69 via a matching circuit including the inductor L16 and the inductor L17. The selection terminal 146 is connected to the output terminal of the fourth transmission filter 54 via a matching circuit including the inductor L18 and the inductor L19. The first switch 104 is, for example, a switch capable of connecting one or more of the six selection terminals 141 to 146 to the common terminal 140. Here, the first switch 104 is, for example, a switch capable of one-to-one and one-to-many connections.

The first switch 104 is controlled by, for example, the signal processing circuit 301. The first switch 104 switches the connection state between the common terminal 140 and the six selection terminals 141 to 146 according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The first switch 104 is, for example, a switch IC (Integrated Circuit).

The second switch 105 has a common terminal 150 and a plurality of (for example, three) selection terminals 151 to 153. In the second switch 105, the common terminal 150 is connected to the second output terminal of the second power amplifier 72 via the second output matching circuit 132. The selection terminal 151 is connected to the input terminal of the first transmission filter 51. The selection terminal 152 is connected to the input terminal of the second transmission filter 52. The selection terminal 153 is connected to the input terminal of the third transmission filter 53. The second switch 105 is, for example, a switch capable of connecting one or more of the three selection terminals 151 to 153 to the common terminal 150.

The second switch 105 is controlled by, for example, the signal processing circuit 301. In this case, the second switch 105 switches the connection state between the common terminal 150 and the three selection terminals 151 to 153 according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The second switch 105 is, for example, a switch IC.

The third switch 106 has a common terminal 160 and a plurality of (for example, nine) selection terminals 161 to 169. In the third switch 106, the common terminal 160 is connected to the signal output terminal T4. The selection terminal 161 is connected to the output terminal of the first reception filter 61 via the low noise amplifier 81 and the inductor L1. The selection terminal 162 is connected to the output terminal of the second reception filter 62 via the low noise amplifier 82 and the inductor L2. The selection terminal 163 is connected to the output terminal of the third receive filter 63 via the low noise amplifier 83 and the inductor L3. The selection terminal 164 is connected to the output terminal of the fourth reception filter 64 via the low noise amplifier 84 and the inductor L4. The selection terminal 165 is connected to the output terminal of the fifth reception filter 65 via the low noise amplifier 85 and the inductor L5. The selection terminal 166 is connected to the output terminal of the sixth reception filter 66 via the low noise amplifier 86 and the inductor L6. The selection terminal 167 is connected to the output terminal of the seventh reception filter 67 via the low noise amplifier 87 and the inductor L7. The selection terminal 168 is connected to the output terminal of the eighth receive filter 68 via the low noise amplifier 88 and the inductor L8. The selection terminal 169 is connected to the output terminal of the ninth reception filter 69 via the low noise amplifier 89 and the inductor L9. The third switch 106 is, for example, a switch capable of connecting one or more of nine selection terminals 161 to 169 to the common terminal 160. Here, the third switch 106 is, for example, a switch capable of one-to-one and one-to-many connections.

The third switch 106 is controlled by, for example, the signal processing circuit 301. The third switch 106 switches the connection state between the common terminal 160 and the nine selection terminals 161 to 169 according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The third switch 106 is, for example, a switch IC.

(1.2) Structure of High Frequency Module As shown in FIGS. 1 to 4, the high frequency module 200 includes a mounting board 9, a first electronic component 1, a second electronic component 2, a third electronic component 3, and a second component. It includes four electronic components (see FIGS. 2 and 3), a fifth electronic component 6, and a sixth electronic component 8 (see FIGS. 2 and 3). The first electronic component 1 includes a first transmission filter 51 and a second transmission filter 52. The second electronic component 2 includes a third transmission filter 53. The third electronic component 3 includes a first reception filter 61, a second reception filter 62, and a third reception filter 63. The third electronic component 3 further includes a fourth receiving filter 64. The fourth electronic component 4 includes a second switch 105 (see FIG. 9). The fifth electronic component 6 includes an eighth receiving filter 68 and a ninth receiving filter 69. The sixth electronic component 8 includes an amplification unit 80 and a first switch 104 (see FIG. 2). The amplification unit 80 includes nine low noise amplifiers 81 to 89 (see FIG. 9) and a third switch 106 (see FIG. 9). Further, the high frequency module 200 includes a first inductor included in the first output matching circuit 131 (see FIG. 9) and a second inductor included in the second output matching circuit 132 (see FIG. 9). Further, the high frequency module 200 includes a fourth transmission filter 54, a fifth reception filter 65, a sixth reception filter 66, and a seventh reception filter 67. Further, the high frequency module 200 includes a first power amplifier 71, a second power amplifier 72, nine inductors L1 to L9, and nine inductors L11 to L19. Further, the high frequency module 200 includes a plurality of external connection terminals T0 (see FIGS. 3 and 4). Further, the high frequency module 200 includes a first resin layer 170, a shield layer 180, and a second resin layer 190.

The mounting board 9 has a first main surface 91 and a second main surface 92 facing each other in the thickness direction D1 of the mounting board 9 (see FIGS. 3 and 4). The mounting substrate 9 is, for example, a multilayer substrate including a plurality of dielectric layers and a plurality of conductive layers. The plurality of dielectric layers and the plurality of conductive layers are laminated in the thickness direction D1 of the mounting substrate 9. The plurality of conductive layers are formed in a predetermined pattern defined for each layer. Each of the plurality of conductive layers includes one or a plurality of conductor portions in one plane orthogonal to the thickness direction D1 of the mounting substrate 9. The material of each conductive layer is, for example, copper. The plurality of conductive layers include a ground layer. In the high frequency module 200, a plurality of ground terminals T5 and a ground layer are electrically connected via a via conductor or the like included in the mounting substrate 9. The mounting substrate 9 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate. The mounting substrate 9 is not limited to the LTCC substrate, and may be, for example, a printed wiring board, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multilayer substrate. The outer edge of the mounting board 9 is a square shape in a plan view from the thickness direction D1 of the mounting board 9.

Further, the mounting board 9 is not limited to the LTCC board, and may be, for example, a wiring structure. The wiring structure is, for example, a multi-layer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed in a predetermined pattern. When there are a plurality of insulating layers, the plurality of insulating layers are formed in a predetermined pattern determined for each layer. The conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. When there are a plurality of conductive layers, the plurality of conductive layers are formed in a predetermined pattern determined for each layer. The conductive layer may include one or more rewiring portions. In the wiring structure, of the two surfaces facing each other in the thickness direction of the multilayer structure, the first surface is the first main surface 91 of the mounting board 9, and the second surface is the second main surface 92 of the mounting board 9. Is. The wiring structure may be, for example, an interposer. The interposer may be an interposer using a silicon substrate or a substrate composed of multiple layers.

The first main surface 91 and the second main surface 92 of the mounting board 9 are separated from each other in the thickness direction D1 of the mounting board 9, and intersect with the thickness direction D1 of the mounting board 9. The first main surface 91 of the mounting board 9 is, for example, orthogonal to the thickness direction D1 of the mounting board 9, but may include, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1. .. Further, the second main surface 92 of the mounting board 9 is, for example, orthogonal to the thickness direction D1 of the mounting board 9, but includes, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1. You may. Further, the first main surface 91 and the second main surface 92 of the mounting substrate 9 may be formed with fine irregularities, concave portions or convex portions.

In the high frequency module 200, a plurality of first circuit components are mounted on the first main surface 91 of the mounting board 9. The plurality of first circuit components include a first electronic component 1, a second electronic component 2, a third electronic component 3, a fourth transmission filter 54, a fifth reception filter 65, a sixth reception filter 66, and the like. It includes a seventh receiving filter 67, a fifth electronic component 6, a first power amplifier 71, a second power amplifier 72, nine inductors L1 to L9, and nine inductors L11 to L19. "The first circuit component is mounted on the first main surface 91 of the mounting board 9" means that the first circuit component is arranged on the first main surface 91 of the mounting board 9 (mechanically connected). The fact that the first circuit component is electrically connected to (the appropriate conductor portion) of the mounting board 9 is included.

In the high frequency module 200, a plurality of second circuit components are mounted on the second main surface 92 of the mounting board 9. The plurality of second circuit components include a fourth electronic component 4 and a sixth electronic component 8. "The second circuit component is mounted on the second main surface 92 of the mounting board 9" means that the second circuit component is arranged on the second main surface 92 of the mounting board 9 (mechanically connected). The fact that the second circuit component is electrically connected to (the appropriate conductor portion) of the mounting board 9 is included.

Each of the four transmission filters 51 to 54 is, for example, a ladder type filter and has a plurality of series arm resonators and a plurality of parallel arm resonators. Each of the four transmission filters 51-54 is, for example, an elastic wave filter. In the elastic wave filter, each of the plurality of series arm resonators and the plurality of parallel arm resonators is composed of elastic wave resonators. The surface acoustic wave filter is, for example, a surface acoustic wave filter that utilizes a surface acoustic wave. In the surface acoustic wave filter, each of the plurality of series arm resonators and the plurality of parallel arm resonators is, for example, a SAW (Surface Acoustic Wave) resonator.

As shown in FIG. 1, the first electronic component 1 including the first transmission filter 51 and the second transmission filter 52 is mounted on the first main surface 91 of the mounting board 9. The first electronic component 1 is mounted on the first main surface 91 of the mounting board 9 so that its thickness direction is aligned with the thickness direction D1 of the mounting board 9. The outer edge of the first electronic component 1 is a square shape in a plan view from the thickness direction D1 of the mounting substrate 9.

As shown in FIGS. 5 and 6, the first electronic component 1 has a substrate 10 common to the first transmission filter 51 and the second transmission filter 52. The first transmission filter 51 has a first substrate. The second transmission filter 52 has a second substrate. In the first electronic component 1, the first substrate and the second substrate are common substrates 10. The substrate 10 is a piezoelectric substrate, for example, a lithium tantalate substrate or a lithium niobate substrate. The first transmission filter 51 has a plurality of first IDT (Interdigital Transducer) electrodes 516 formed on the substrate 10. The second transmission filter 52 has a plurality of second IDT electrodes 526 formed on the substrate 10. In the first transmission filter 51, each of the plurality of first IDT electrodes 516 is a component of the SAW resonator. In the second transmission filter 52, each of the plurality of second IDT electrodes 526 is a component of the SAW resonator. Further, the first electronic component 1 is arranged one by one on one side and the other side in the direction in which the plurality of electrode fingers of each of the plurality of first IDT electrodes 516 are arranged in a plan view from the thickness direction of the substrate 10. It has a reflector 517. That is, the first electronic component 1 has twice the number of reflectors 517 as the number of the first IDT electrodes 516. The reflector 517 is formed on the substrate 10 so as to be adjacent to the first IDT electrode 516 in a plan view from the thickness direction of the substrate 10, and elastic in the direction in which a plurality of electrode fingers of the first IDT electrode 516 are arranged. Reflects elastic waves in the wave propagation direction. Further, the first electronic component 1 is arranged one by one on one side and the other side in the direction in which the plurality of electrode fingers of each of the plurality of second IDT electrodes 526 are arranged in a plan view from the thickness direction of the substrate 10. It has a reflector 527. In the first electronic component 1, the electrode finger cycle, which is the cycle of the plurality of electrode fingers of the first IDT electrode 516, is determined based on the pass band of the first transmission filter 51. Further, in the first electronic component 1, the electrode finger cycle, which is the cycle of the plurality of electrode fingers of the second IDT electrode 526, is determined based on the pass band of the second transmission filter 52.

As shown in FIG. 6, the substrate 10 in the first electronic component 1 has a first main surface 10A and a second main surface 10B facing each other in the thickness direction of the substrate 10. Further, the first electronic component 1 includes a spacer layer 16, a cover member 17, and eight first external terminals 15 (see FIGS. 1 and 5) as constituent elements of the package structure. As shown in FIG. 5, the plurality of first external terminals 15 include an input terminal 511, an output terminal 512 and a ground terminal 513 of the first transmission filter 51, and an input terminal 521, an output terminal 522 and a ground of the second transmission filter 52. Includes terminal 523 and.

The spacer layer 16 is provided on the first main surface 10A side of the substrate 10. In a plan view from the thickness direction of the substrate 10, the spacer layer 16 includes a rectangular frame-shaped portion formed along the outer edge of the substrate 10. The spacer layer 16 has electrical insulation. The material of the spacer layer 16 is an epoxy resin, polyimide, or the like. The cover member 17 has a flat plate shape. The cover member 17 is arranged on the spacer layer 16 so as to face the substrate 10 in the thickness direction of the substrate 10. The cover member 17 overlaps the plurality of first IDT electrodes 516 and the plurality of second IDT electrodes 526 in the thickness direction of the substrate 10, and the plurality of first IDT electrodes 516 and the plurality of second IDT electrodes 526 in the thickness direction of the substrate 10. Away from. The cover member 17 has electrical insulation. The material of the cover member 17 is epoxy resin, polyimide, or the like. The plurality of first external terminals 15 are exposed from the cover member 17. The first electronic component 1 is connected to the first main surface 91 of the mounting board 9 by a plurality of first external terminals 15. "The plurality of first external terminals 15 are connected to the first main surface 91 of the mounting board 9" means that the plurality of first external terminals 15 of the first electronic component 1 are connected to the first main surface 91 of the mounting board 9. It means that they are mechanically and electrically connected to a plurality of conductor portions of the mounting board 9 that are directly bonded to the mounting board 9 and overlap the first electronic component 1 in the thickness direction D1 of the mounting board 9.

As shown in FIG. 1, the second electronic component 2 including the third transmission filter 53 is mounted on the first main surface 91 of the mounting board 9. The second electronic component 2 is mounted on the first main surface 91 of the mounting board 9 so that its thickness direction is aligned with the thickness direction D1 of the mounting board 9. The outer edge of the second electronic component 2 is a square shape in a plan view from the thickness direction D1 of the mounting substrate 9.

As shown in FIG. 7, the second electronic component 2 has a substrate 20. The substrate 20 is a piezoelectric substrate, for example, a lithium tantalate substrate or a lithium niobate substrate. The third transmission filter 53 has a plurality of third IDT electrodes 536 formed on the substrate 20. In the third transmission filter 53, each of the plurality of third IDT electrodes 536 is a component of the SAW resonator. Further, the second electronic component 2 is arranged one by one on one side and the other side in the direction in which the plurality of electrode fingers of each of the plurality of third IDT electrodes 536 are arranged in a plan view from the thickness direction of the substrate 20. Has a reflector. In the second electronic component 2, the electrode finger cycle, which is the cycle of the plurality of electrode fingers of the third IDT electrode 536, is determined based on the pass band of the third transmission filter 53.

The substrate 20 has a first main surface 20A and a second main surface 20B facing each other in the thickness direction of the substrate 20. Further, the second electronic component 2 includes a spacer layer 26, a cover member 27, and four second external terminals 25 as components of the package structure. The four second external terminals 25 include an input terminal, an output terminal, and a ground terminal of the third transmission filter 53.

The spacer layer 26 is provided on the first main surface 20A side of the substrate 20. In a plan view from the thickness direction of the substrate 20, the spacer layer 26 includes a rectangular frame-shaped portion formed along the outer edge of the substrate 20. The spacer layer 26 has electrical insulation. The cover member 27 has a flat plate shape. The cover member 27 is arranged on the spacer layer 26 so as to face the substrate 20 in the thickness direction of the substrate 20. The cover member 27 overlaps with the plurality of third IDT electrodes 536 in the thickness direction of the substrate 20, and is separated from the plurality of third IDT electrodes 536 in the thickness direction of the substrate 20. The plurality of second external terminals 25 are exposed from the cover member 27. The second electronic component 2 is connected to the first main surface 91 of the mounting board 9 by a plurality of second external terminals 25. "The plurality of second external terminals 25 are connected to the first main surface 91 of the mounting board 9" means that the plurality of second external terminals 25 of the second electronic component 2 are connected to the first main surface 91 of the mounting board 9. It means that they are mechanically and electrically connected to a plurality of conductor portions of the mounting board 9 that are directly bonded to the mounting board 9 and overlap the second electronic component 2 in the thickness direction D1 of the mounting board 9.

Each of the nine receiving filters 61 to 69 is, for example, a ladder type filter and has a plurality of series arm resonators and a plurality of parallel arm resonators. Each of the nine receiving filters 61-69 is, for example, an elastic wave filter. In the elastic wave filter, each of the plurality of series arm resonators and the plurality of parallel arm resonators is composed of elastic wave resonators. The surface acoustic wave filter is, for example, a surface acoustic wave filter that utilizes a surface acoustic wave. In a surface acoustic wave filter, each of the plurality of series arm resonators and the plurality of parallel arm resonators is, for example, a SAW resonator.

As shown in FIG. 1, the third electronic component 3 including the first reception filter 61, the second reception filter 62, and the third reception filter 63 is mounted on the first main surface 91 of the mounting board 9. The third electronic component 3 is mounted on the first main surface 91 of the mounting board 9 so that its thickness direction is aligned with the thickness direction D1 of the mounting board 9. The outer edge of the third electronic component 3 is a square shape in a plan view from the thickness direction D1 of the mounting substrate 9. In the third electronic component 3, the second reception filter 62, the first reception filter 61, and the third reception filter 63 are the second reception filter 62 and the first reception filter in a plan view from the thickness direction D1 of the mounting board 9. 61 and the third reception filter 63 are arranged in this order. The third electronic component 3 further includes a fourth receiving filter 64.

As shown in FIG. 8, the third electronic component 3 has a substrate 30 common to the first receiving filter 61, the second receiving filter 62, and the third receiving filter 63. The first reception filter 61 has a third substrate. The second reception filter 62 has a fourth substrate. The third reception filter 63 has a fifth substrate. In the third electronic component 3, the third substrate, the fourth substrate, and the fifth substrate are common substrates 30. When the third electronic component 3 also includes the fourth receiving filter 64, the substrate 30 is common to the first receiving filter 61, the second receiving filter 62, the third receiving filter 63, and the fourth receiving filter 64. The substrate 30 is a piezoelectric substrate, for example, a lithium tantalate substrate or a lithium niobate substrate. The first reception filter 61 has a plurality of IDT electrodes 616 formed on the substrate 30. In the first reception filter 61, each of the plurality of IDT electrodes 616 is a component of the SAW resonator. The second reception filter 62 has a plurality of IDT electrodes 626 formed on the substrate 30. In the second reception filter 62, each of the plurality of IDT electrodes 626 is a component of the SAW resonator. The third reception filter 63 has a plurality of IDT electrodes 636 formed on the substrate 30. In the third reception filter 63, each of the plurality of IDT electrodes 636 is a component of the SAW resonator. In the third electronic component 3, the electrode finger cycle, which is the cycle of the plurality of electrode fingers of the IDT electrode 616, is determined based on the pass band of the first reception filter 61. Further, in the third electronic component 3, the electrode finger cycle, which is the cycle of the plurality of electrode fingers of the IDT electrode 626, is determined based on the pass band of the second reception filter 62. Further, in the third electronic component 3, the electrode finger cycle, which is the cycle of the plurality of electrode fingers of the IDT electrode 636, is determined based on the pass band of the third reception filter 63. Further, in the third electronic component 3, the electrode finger cycle, which is the cycle of a plurality of electrode fingers of the IDT electrode of the fourth receiving filter 64, is determined based on the pass band of the fourth receiving filter 64.

The substrate 30 has a first main surface 30A and a second main surface 30B facing each other in the thickness direction of the substrate 30. Further, the third electronic component 3 includes a spacer layer 36, a cover member 37, and a plurality of (for example, 16) third external terminals 35 as components of the package structure. The plurality of third external terminals 35 include an input terminal, an output terminal and a ground terminal of the first reception filter 61, an input terminal, an output terminal and a ground terminal of the second reception filter 62, and an input terminal of the third reception filter 63. Includes output terminal and ground terminal.

The spacer layer 36 is provided on the first main surface 30A side of the substrate 30. In a plan view from the thickness direction of the substrate 30, the spacer layer 36 includes a rectangular frame-shaped portion formed along the outer edge of the substrate 30. The spacer layer 36 has electrical insulation. The cover member 37 has a flat plate shape. The cover member 37 is arranged on the spacer layer 36 so as to face the substrate 30 in the thickness direction of the substrate 30. The cover member 37 overlaps the plurality of IDT electrodes 616, the plurality of IDT electrodes 626, and the plurality of IDT electrodes 636 in the thickness direction of the substrate 30, and the plurality of IDT electrodes 616 and the plurality of IDTs in the thickness direction of the substrate 30. It is separated from the electrode 626 and the plurality of IDT electrodes 636. The plurality of third external terminals 35 are exposed from the cover member 37. The third electronic component 3 has a plurality of third external terminals 35, and is connected to the first main surface 91 of the mounting board 9 by the plurality of third external terminals 35. "The plurality of third external terminals 35 are connected to the first main surface 91 of the mounting board 9" means that the plurality of third external terminals 35 of the third electronic component 3 are connected to the first main surface 91 of the mounting board 9. It means that they are mechanically and electrically connected to a plurality of conductor portions of the mounting board 9 that are directly bonded to the mounting board 9 and overlap the third electronic component 3 in the thickness direction D1 of the mounting board 9.

As shown in FIG. 1, the fifth reception filter 65, the sixth reception filter 66, and the seventh reception filter 67 are mounted on the first main surface 91 of the mounting board 9. The outer edges of the fifth receiving filter 65, the sixth receiving filter 66, and the seventh receiving filter 67 are square in plan view from the thickness direction D1 of the mounting board 9. Each of the fifth receiving filter 65, the sixth receiving filter 66, and the seventh receiving filter 67 is an electronic component having the same structure as the second electronic component 2. The fifth receiving filter 65, the sixth receiving filter 66, and the seventh receiving filter 67 determine the electrode finger cycle, which is the cycle of the plurality of electrode fingers of the IDT electrode, based on their respective pass bands.

As shown in FIG. 1, the fifth electronic component 6 including the eighth receiving filter 68 and the ninth receiving filter 69 is mounted on the first main surface 91 of the mounting board 9. In a plan view from the thickness direction D1 of the mounting substrate 9, the outer edge of the fifth electronic component 6 has a square shape. The fifth electronic component 6 is an electronic component having the same structure as the third electronic component 3. The fifth electronic component 6 has a plurality of fifth external terminals 615. The eighth receiving filter 68 and the ninth receiving filter 69 determine the electrode finger cycle, which is the cycle of the plurality of electrode fingers of the IDT electrode, based on their respective pass bands.

Each of the first power amplifier 71 and the second power amplifier 72 is a power amplification IC chip. As described above, the first power amplifier 71 and the second power amplifier 72 are mounted on the first main surface 91 of the mounting board 9. The outer edges of the first power amplifier 71 and the second power amplifier 72 are square in plan view from the thickness direction D1 of the mounting substrate 9. As described above, in the high frequency module 200, the first power amplifier 71 corresponds to the power class 1, the second power amplifier 72 corresponds to the power class 2 or the power class 3, and the plan view from the thickness direction D1 of the mounting board 9 The external size (chip size) of the first power amplifier 71 is larger than the external size (chip size) of the second power amplifier 72.

Each of the driver stage amplifier and the final stage amplifier of the first power amplifier 71 includes an amplification transistor. The amplification transistor is, for example, an HBT (Heterojunction Bipolar Transistor). The amplification transistor is not limited to the HBT, but may be a bipolar transistor or a FET (Field Effect Transistor). The FET is, for example, a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor).

Each of the driver stage amplifier and the final stage amplifier of the second power amplifier 72 includes an amplification transistor. The amplification transistor is, for example, an HBT. The amplification transistor is not limited to the HBT, but may be a bipolar transistor or FET. The FET is, for example, a MOSFET.

The first inductor included in the first output matching circuit 131 is an inner layer inductor provided in the mounting board 9.

The second inductor included in the second output matching circuit 132 is an inner layer inductor provided in the mounting board 9.

Each of the nine inductors L1 to L9 is, for example, a chip inductor. The nine inductors L1 to L9 are mounted on the first main surface 91 of the mounting board 9. In a plan view from the thickness direction D1 of the mounting substrate 9, the outer edges of each of the nine inductors L1 to L9 are square.

Each of the nine inductors L11 to L19 is, for example, a chip inductor. The nine inductors L11 to L19 are mounted on the first main surface 91 of the mounting board 9. In a plan view from the thickness direction D1 of the mounting substrate 9, the outer edges of each of the nine inductors L11 to L19 are square.

The fourth electronic component 4 (see FIGS. 2 to 4) including the second switch 105 is mounted on the second main surface 92 of the mounting board 9. In a plan view from the thickness direction D1 of the mounting substrate 9, the outer edge of the fourth electronic component 4 has a square shape. The fourth electronic component 4 is an IC chip having a circuit unit. The circuit unit includes a plurality of FETs as a plurality of switching elements. Each of the plurality of switching elements is not limited to the FET, and may be, for example, a bipolar transistor. The fourth electronic component 4 has a plurality of fourth external terminals 45 (see FIGS. 3 and 4). Each of the plurality of fourth external terminals 45 is a bump. The fourth electronic component 4 is flip-chip mounted on the second main surface 92 of the mounting board 9.

The sixth electronic component 8 (see FIGS. 2 and 3) including the amplification unit 80 including the nine low noise amplifiers 81 to 89 and the third switch 106 and the first switch 104 is the second main surface of the mounting board 9. It is implemented in 92. The sixth electronic component 8 has a plurality of sixth external terminals 805 (see FIG. 3). Each of the plurality of sixth external terminals 805 is a bump. The outer edge of the sixth electronic component 8 is a square shape in a plan view from the thickness direction D1 of the mounting substrate 9. Each of the nine low noise amplifiers 81 to 89 includes a FET as an amplification transistor for amplifying a received signal input to the input terminal. The amplification transistor is not limited to the FET, and may be, for example, a bipolar transistor.

As shown in FIGS. 3 and 4, the plurality of external connection terminals T0 are arranged on the second main surface 92 of the mounting board 9. "The external connection terminal T0 is arranged on the second main surface 92 of the mounting board 9" means that the external connection terminal T0 is mechanically connected to the second main surface 92 of the mounting board 9 and that it is external. Includes that the connection terminal T0 is electrically connected to (the appropriate conductor portion) of the mounting board 9.

As shown in FIG. 9, the plurality of external connection terminals T0 include an antenna terminal T1, a signal input terminal T2, a signal input terminal T3, a signal output terminal T4, and a plurality of ground terminals T5 (see FIGS. 3 and 4). And, including. The plurality of ground terminals T5 are electrically connected to the ground layer of the mounting board 9. The ground layer is the circuit ground of the high frequency module 200, and the plurality of circuit components of the high frequency module 200 include circuit components that are electrically connected to the ground layer.

The material of the plurality of external connection terminals T0 is, for example, a metal (for example, copper, copper alloy, etc.). Each of the plurality of external connection terminals T0 is a columnar electrode. The columnar electrode is, for example, a columnar electrode. The plurality of external connection terminals T0 are bonded to the conductor portion of the mounting substrate 9 by, for example, solder, but the present invention is not limited to this, and the plurality of external connection terminals T0 are bonded by using, for example, a conductive adhesive (for example, a conductive paste). It may be bonded or it may be directly bonded.

As shown in FIGS. 3 and 4, the first resin layer 170 is arranged on the first main surface 91 of the mounting substrate 9. The first resin layer 170 contains a resin (for example, an epoxy resin). The first resin layer 170 may contain a filler in addition to the resin.

The first resin layer 170 covers the outer peripheral surface 13 of the first electronic component 1, the outer peripheral surface 23 of the second electronic component 2, and the outer peripheral surface 33 of the third electronic component 3. The outer peripheral surface 13 of the first electronic component 1 includes four side surfaces of the first electronic component 1 connecting the main surface 11 on the side opposite to the mounting board 9 side and the main surface on the mounting board 9 side. The outer peripheral surface 23 of the second electronic component 2 includes four side surfaces of the second electronic component 2 connecting the main surface 21 on the side opposite to the mounting board 9 side and the main surface on the mounting board 9 side. The outer peripheral surface 33 of the third electronic component 3 includes four side surfaces of the third electronic component 3 connecting the main surface 31 on the side opposite to the mounting board 9 side and the main surface on the mounting board 9 side. The first resin layer 170 also covers at least a part of each side surface of the plurality of first external terminals 15 of the first electronic component 1. Further, the first resin layer 170 also covers at least a part of each side surface of the plurality of second external terminals 25 of the second electronic component 2. Further, the first resin layer 170 also covers at least a part of each side surface of the plurality of third external terminals 35 of the third electronic component 3. The first resin layer 170 also covers the outer peripheral surface of the fourth transmission filter 54. The first resin layer 170 also covers the fifth receiving filter 65, the sixth receiving filter 66, the seventh receiving filter 67, and the fifth electronic component 6. Further, the first resin layer 170 also covers the first power amplifier 71, the second power amplifier 72, the nine inductors L1 to L9, and the nine inductors L11 to L19.

The shield layer 180 covers the first resin layer 170. The shield layer 180 has conductivity. In the high frequency module 200, the shield layer 180 is provided for the purpose of electromagnetic shielding inside and outside the high frequency module 200. The shield layer 180 has a multi-layer structure in which a plurality of metal layers are laminated, but the shield layer 180 is not limited to this and may be one metal layer. The metal layer contains one or more metals. The shield layer 180 covers the main surface 171 of the first resin layer 170 opposite to the mounting substrate 9 side, the outer peripheral surface 173 of the first resin layer 170, and the outer peripheral surface 93 of the mounting substrate 9. The shield layer 180 is in contact with at least a part of the outer peripheral surface of the ground layer of the mounting substrate 9. Thereby, the potential of the shield layer 180 can be made the same as the potential of the ground layer.

The shield layer 180 is mounted on the main surface 11 on the side opposite to the mounting board 9 side in the first electronic component 1, the main surface 21 on the side opposite to the mounting board 9 side in the second electronic component 2, and the transmission filter 54. It covers the main surface on the side opposite to the substrate 9 side. The shield layer 180 is mounted on the main surface 11 on the side opposite to the mounting board 9 side in the first electronic component 1, the main surface 21 on the side opposite to the mounting board 9 side in the second electronic component 2, and the transmission filter 54. It is in contact with the main surface on the side opposite to the substrate 9 side. In the high frequency module 200, the shield layer 180 is in contact with the entire main surface 11 on the side opposite to the mounting board 9 side in the first electronic component 1. Further, the shield layer 180 is in contact with the entire area of the main surface 21 on the side opposite to the mounting board 9 side in the second electronic component 2.

The second resin layer 190 includes an outer peripheral surface 43 of the fourth electronic component 4 mounted on the second main surface 92 of the mounting board 9, an outer peripheral surface 803 of the sixth electronic component 8, and a plurality of external connection terminals T0, respectively. It covers the outer peripheral surface of the. The second resin layer 190 also covers at least a part of each side surface of the plurality of fourth external terminals 45 of the fourth electronic component 4. Further, the second resin layer 190 also covers at least a part of each side surface of the plurality of sixth external terminals 805 of the sixth electronic component 8. The second resin layer 190 contains a resin (for example, an epoxy resin). The second resin layer 190 may contain a filler in addition to the resin. The material of the second resin layer 190 may be the same material as the material of the first resin layer 170, or may be a different material. The second resin layer 190 does not cover the main surface 41 of the fourth electronic component 4 on the side opposite to the mounting substrate 9 side. The second resin layer 190 does not cover the main surface 801 of the sixth electronic component 8 on the side opposite to the mounting substrate 9 side. Further, the second resin layer 190 does not cover the tip surface of the plurality of external connection terminals T0 on the side opposite to the mounting board 9 side. In the high frequency module 200, the main surface 41 of the fourth electronic component 4, the main surface 801 of the sixth electronic component 8, the tip surfaces of the plurality of external connection terminals T0, and the mounting substrate 9 side in the second resin layer 190 are The main surface 191 on the opposite side and the main surface 191 are substantially flush with each other.

In the high frequency module 200, the shield layer 180 also covers the outer peripheral surface 193 of the second resin layer 190.

(1.3) Layout of High Frequency Module In the high frequency module 200, as described above, the first electronic component 1 includes the first transmission filter 51 and the second transmission filter 52, and the second electronic component 2 is the third. The transmission filter 53 is included, and the third electronic component 3 includes a first reception filter 61, a second reception filter 62, and a third reception filter 63.

In the high frequency module 200, the first electronic component 1 is adjacent to the second electronic component 2 in a plan view from the thickness direction D1 of the mounting substrate 9. "The first electronic component 1 is adjacent to the second electronic component 2" means that "the first electronic component 1 is adjacent to the second electronic component 2" is between the first electronic component 1 and the second electronic component 2 in a plan view from the thickness direction D1 of the mounting board 9. Other first circuit components (third electronic component 3, fifth receiving filter 65, sixth receiving filter 66, seventh receiving filter 67, fifth electronic component 6, first power amplifier 71, second power amplifier 72, It means that the first electronic component 1 and the second electronic component 2 are adjacent to each other without the inductors L1 to L9 and the inductors L11 to L19).

In the high frequency module 200, the third electronic component 3 is the third electronic component 3 in the direction orthogonal to the direction in which the first electronic component 1 and the second electronic component 2 are arranged in a plan view from the thickness direction D1 of the mounting substrate 9. 1 It is lined up with the electronic component 1 and the second electronic component 2. In the high frequency module 200, the first electronic component 1, the second electronic component 2, the fourth transmission filter 54, the first power amplifier 71, and the second power amplifier 72 are arranged in a plan view from the thickness direction D1 of the mounting substrate 9. The first region in which the third electronic component 3, the fifth receiving filter 65, the sixth receiving filter 66, the seventh receiving filter 67, and the fifth electronic component 6 are arranged are arranged in the first region. In between, there is a third region in which the inductors L11 to L19 are arranged. In the high frequency module 200, the first electronic component 1 and the third electronic component 3 are arranged in the direction in which the first electronic component 1 and the third electronic component 3 are arranged in a plan view from the thickness direction D1 of the mounting substrate 9. The inductor L12 is located between them. Further, in the high frequency module 200, the second electronic component 2 and the third electronic component are arranged in the direction in which the second electronic component 2 and the third electronic component 3 are arranged in a plan view from the thickness direction D1 of the mounting substrate 9. The inductor L11 is located between the three and the third.

In the first electronic component 1, the second transmission filter 52 and the first transmission filter 51 are arranged side by side with the first electronic component 1 and the second electronic component 2 in a plan view from the thickness direction D1 of the mounting board 9. They are lined up in the direction along which they are. In the first electronic component 1, the second transmission filter 52 is located on the side opposite to the second electronic component 2 side when viewed from the first transmission filter 51. Therefore, in the high frequency module 200, the second transmission filter 52, the first transmission filter 51, and the third transmission filter 53 are the second transmission filter 52 and the first transmission filter in a plan view from the thickness direction D1 of the mounting substrate 9. 51 and the third transmission filter 53 are arranged in this order.

The frequency difference between the Band 3 transmission band corresponding to the second transmission filter 52 and the Band 3 reception band is 20 MHz. The frequency difference means the difference between the lower limit frequency of the relatively high frequency band and the upper limit frequency of the relatively low frequency band among the transmission band and the reception band of the same communication band. Therefore, the frequency difference between the Band 3 transmission band and the Band 3 reception band is 20 MHz, which is the difference between the lower limit frequency of the Band 3 reception band (1805 MHz) and the upper limit frequency of the Band 3 transmission band (1785 MHz). The frequency difference between the Band1 transmission band corresponding to the first transmission filter 51 and the Band1 reception band is 130 MHz. The frequency difference between the Band 66 transmission band and the Band 66 reception band corresponding to the third transmission filter 53 is 330 MHz. Among the first transmission filter 51, the second transmission filter 52, and the third transmission filter 53, the second transmission filter 52 corresponding to Band 3 having the smallest frequency difference between the transmission band and the reception band is the first transmission filter 51 and the third transmission filter 52. Since the second transmission filter 52 tends to generate heat more easily than the transmission filter 53 and the withstand power tends to decrease, the second transmission filter 52 is made larger than the first transmission filter 51. In the high frequency module 200, the first transmission filter 51 is smaller than the second transmission filter 52 and the third transmission filter 53 in a plan view from the thickness direction D1 from the mounting substrate 9. "The first transmission filter 51 is smaller than the second transmission filter 52 and the third transmission filter 53" means that the first transmission filter in the first electronic component 1 is viewed from the thickness direction D1 of the mounting substrate 9. It means that the filter area of 51 is smaller than the filter area of the second transmission filter 52 and the filter area of the third transmission filter 53. The filter region of the first transmission filter 51 is, for example, a virtual polygonal region including a plurality of first IDT electrodes 516 of the first transmission filter 51 as shown by the alternate long and short dash line in FIG. The outer edge of the filter region of the first transmission filter 51 includes a line segment along a part of the outer edge of each of the plurality of first IDT electrodes 516 and a line segment connecting arbitrary two adjacent first IDT electrodes 516 with each other at the shortest distance. ,including. The filter region of the second transmission filter 52 is, for example, a virtual polygonal region including a plurality of second IDT electrodes 526 of the second transmission filter 52 as shown by the alternate long and short dash line in FIG. The outer edge of the filter region of the second transmission filter 52 includes a line segment along a part of the outer edge of each of the plurality of second IDT electrodes 526 and a line segment connecting any two adjacent second IDT electrodes 526 at the shortest distance. ,including. Similarly, the filter region of the third transmission filter 53 is a virtual polygonal region including a plurality of third IDT electrodes 536 of the third transmission filter 53. The outer edge of the filter region of the third transmission filter 53 includes a line segment along a part of the outer edge of each of the plurality of third IDT electrodes 536 and a line segment connecting arbitrary two adjacent third IDT electrodes 536 with each other at the shortest distance. ,including.

In the third electronic component 3, the second reception filter 62, the first reception filter 61, and the third reception filter 63 are the second transmission filter 52 and the first transmission filter in a plan view from the thickness direction D1 of the mounting board 9. The second reception filter 62, the first reception filter 61, and the third reception filter 63 are arranged in this order in a direction parallel to the direction in which the 51 and the third transmission filter 53 are arranged.

In the high frequency module 200, the first electronic component 1, the second electronic component 2, and the third electronic component 3 are mounted on the first main surface 91 of the mounting board 9, whereas the fourth electronic component 4 is mounted on the mounting board. It is mounted on the second main surface 92 of 9.

The fourth electronic component 4 is an IC chip including a second switch 105 to which the first transmission filter 51, the second transmission filter 52, and the third transmission filter 53 are connected. The fourth electronic component 4 overlaps the first electronic component 1 and the second electronic component 2 in a plan view from the thickness direction D1 of the mounting substrate 9 (see FIG. 2). The fourth electronic component 4 does not overlap with the first power amplifier 71, the second power amplifier 72, the first output matching circuit 131, and the second output matching circuit 132 in a plan view from the thickness direction D1 of the mounting board 9. .. Here, the fourth electronic component 4 overlaps the first transmission filter 51, the second transmission filter 52, and the third transmission filter 53 in a plan view from the thickness direction D1 of the mounting substrate 9. In the high frequency module 200, the fourth electronic component 4 overlaps a part of the first electronic component 1 and a part of the second electronic component 2 in a plan view from the thickness direction D1 of the mounting substrate 9, but the first electronic component It may be configured to overlap all of 1 and all of the second electronic components, or may be configured to overlap one part of the first electronic component 1 and the second electronic component 2 and all of the other. .. In the high frequency module 200, the fourth electronic component 4 overlaps a part of each of the first transmission filter 51, the second transmission filter 52, and the third transmission filter 53 in a plan view from the thickness direction D1 of the mounting substrate 9. It may be configured to overlap all of the first transmission filter 51, the second transmission filter 52, and the third transmission filter 53.

The sixth electronic component 8 is mounted on the second main surface 92 of the mounting board 9 as described above. The sixth electronic component 8 overlaps with the third electronic component 3 in a plan view from the thickness direction D1 of the mounting substrate 9 (see FIGS. 2 and 3). Further, the sixth electronic component 8 overlaps the entire third electronic component 3 in a plan view from the thickness direction D1 of the mounting substrate 9, but is not limited to this, and the sixth electronic component 8 overlaps a part of the third electronic component 3. It may be. Further, the sixth electronic component 8 is a plan view from the thickness direction D1 of the mounting board 9, and is a fifth receiving filter 65, a sixth receiving filter 66, a seventh receiving filter 67, a fifth electronic component 6, and an inductor L1 to. It overlaps with L9, inductors L11 to L14, inductor L18 and inductor L19.

(2) Effect (2.1) High Frequency Module The high frequency module 200 according to the first embodiment includes a mounting board 9, a first electronic component 1, a second electronic component 2, and a third electronic component 3. The mounting board 9 has a first main surface 91 and a second main surface 92 facing each other. The first electronic component 1 is mounted on the first main surface 91 of the mounting board 9. The second electronic component 2 is mounted on the first main surface 91 of the mounting board 9. The third electronic component 3 is mounted on the first main surface 91 of the mounting board 9. The first electronic component 1 includes a first transmission filter 51 and a second transmission filter 52. The first transmission filter 51 has a pass band including the transmission band of the first communication band. The second transmission filter 52 has a pass band including a transmission band of a second communication band different from the first communication band. The first electronic component 1 has a substrate 10 common to the first transmission filter 51 and the second transmission filter 52. The second electronic component 2 includes a third transmission filter 53. The third transmission filter 53 has a pass band including the transmission band of the third communication band. The third communication band is different from the first communication band and the second communication band. The third electronic component 3 includes a first reception filter 61, a second reception filter 62, and a third reception filter 63. The first reception filter 61 has a pass band including the reception band of the first communication band. The second reception filter 62 has a pass band including the reception band of the second communication band. The third reception filter 63 has a pass band including the reception band of the third communication band. The third electronic component 3 has a substrate 30 common to the first receiving filter 61, the second receiving filter 62, and the third receiving filter 63.

The high frequency module 200 according to the first embodiment can be miniaturized. More specifically, the high-frequency module 200 can reduce the external size of the high-frequency module 200 in a plan view from the thickness direction D1 of the mounting substrate 9.

In the high frequency module 200, the first electronic component 1 has a plurality of first external terminals 15 and is connected to the first main surface 91 of the mounting board 9 by the plurality of first external terminals 15. The second electronic component 2 has a plurality of second external terminals 25, and is connected to the first main surface 91 of the mounting board 9 by the plurality of second external terminals 25. The third electronic component 3 has a plurality of third external terminals 35, and is connected to the first main surface 91 of the mounting board 9 by the plurality of third external terminals 35. This makes it possible to reduce the size of the high frequency module 200.

The operating temperature of the first transmission filter 51, the second transmission filter 52, and the third transmission filter 53 is higher than the operating temperature of the first reception filter 61, the second reception filter 62, and the third reception filter 63. , The temperature tends to rise. In the high frequency module 200, since the first electronic component 1 is configured to include the first transmission filter 51 and the second transmission filter 52 and the second electronic component 2 includes the third transmission filter 53, the first transmission is performed. Compared with a configuration in which the filter 51, the second transmission filter 52, and the third transmission filter 53 have a common substrate, it is possible to suppress a temperature rise and improve reliability.

In the high frequency module 200, the first transmission filter 51 is smaller than the second transmission filter 52 and the third transmission filter 53 in a plan view from the thickness direction D1 from the mounting substrate 9. As a result, in the high frequency module 200, the first electronic component 1 can be downsized as compared with the configuration in which the second transmission filter 52 and the third transmission filter 53 have a common substrate. By reducing the size of the first electronic component 1, the high-frequency module 200 has a plurality of first external terminals 15 of the first electronic component 1 due to the difference in linear expansion coefficient between the first electronic component 1 and the mounting board 9. It is possible to reduce the stress applied to the first electronic component 1 and improve the connection reliability between the first electronic component 1 and the mounting board 9.

In the high frequency module 200, the first communication band is Band 1 of the 3GPP LTE standard, the second communication band is Band 3 of the 3GPP LTE standard, and the third communication band is Band 66 of the 3GPP LTE standard. Therefore, in the high frequency module 200, the combination of the first communication band and the second communication band is a combination capable of simultaneous communication in the high frequency module 200. Here, simultaneous communication is possible means that at least one of simultaneous reception, simultaneous transmission, and simultaneous transmission / reception is possible. The high frequency module 200 is a combination capable of simultaneous reception and a combination capable of simultaneous transmission. Further, in the high frequency module 200, the combination of the third communication band and the first communication band is a combination in which simultaneous reception is not performed in the high frequency module 200, and the combination of the third communication band and the second communication band is a high frequency module. It is a combination that does not perform simultaneous reception in 200.

The high frequency module 200 further includes a resin layer 170 and a shield layer 180. The resin layer 170 is arranged on the first main surface 91 of the mounting substrate 9. The resin layer 170 is arranged on the first main surface 91 of the mounting substrate 9, and at least the outer peripheral surface 13 of the first electronic component 1, the outer peripheral surface 23 of the second electronic component 2, and the outer peripheral surface 33 of the third electronic component 3 are arranged. It covers and. The shield layer 180 covers the resin layer 170 and overlaps at least a part of each of the first electronic component 1, the second electronic component 2, and the third electronic component 3 in a plan view from the thickness direction D1 of the mounting substrate 9. ing. In other words, the shield layer 180 is a plan view of the mounting substrate 9 from the thickness direction D1 of at least a part of the first electronic component 1, at least a part of the second electronic component 2, and the third electronic component 3. It overlaps at least partly. The shield layer 180 is in contact with the main surface 11 on the side opposite to the mounting board 9 side in the first electronic component 1. As a result, the high frequency module 200 can easily dissipate the heat generated by the first electronic component 1 through the shield layer 180, so that the temperature rise of the first electronic component 1 can be suppressed.

Further, in the high frequency module 200, a sixth electronic component including nine receiving filters 61 to 69, nine inductors L1 to L9, and nine low noise amplifiers 81 to 89 in a plan view from the thickness direction D1 of the mounting substrate 9. 8 overlaps. As a result, the high frequency module 200 can improve the NF (Noise Figure) of the nine low noise amplifiers 81 to 89.

(2.2) Communication device The communication device 300 according to the first embodiment includes a signal processing circuit 301 and a high frequency module 200. The signal processing circuit 301 is connected to the high frequency module 200.

Since the communication device 300 includes the high frequency module 200, it is possible to reduce the size.

The plurality of electronic components constituting the signal processing circuit 301 may be mounted on the above-mentioned circuit board, for example, or a circuit board (first circuit board) different from the circuit board (first circuit board) on which the high frequency module 200 is mounted. It may be mounted on the second circuit board).

(3) Other Examples of First Electronic Components, Second Electronic Components and Third Electronic Components in High Frequency Modules (3.1) Examples of First Electronic Components, Examples of Second Electronic Components 1, and Third Electronic Components Example 1
In the high frequency module 200 according to the first embodiment, in the first electronic component 1, the substrate 10 is composed of a piezoelectric substrate, but the present invention is not limited to this, and the substrate 10 may be a silicon substrate. As shown in FIG. 10, the first electronic component 1 according to Example 1 has a plurality of first IDT electrodes on a piezoelectric substrate having a laminated structure of a substrate 10 made of a silicon substrate, a bass velocity film 18, and a piezoelectric layer 19. 516 and a plurality of second IDT electrodes 526 are formed. In the first electronic component 1 according to the first embodiment, the same components as those of the first electronic component 1 of the high frequency module 200 according to the first embodiment are designated by the same reference numerals, and the description thereof will be omitted as appropriate.

In the first electronic component 1 according to Example 1, the piezoelectric substrate includes the substrate 10, the low sound velocity film 18 formed on the substrate 10, and the piezoelectric layer 19 formed on the low sound velocity film 18. including. The substrate 10 has a first main surface 10A and a second main surface 10B facing each other in the thickness direction of the substrate 10. The low sound velocity film 18 is formed on the first main surface 10A of the substrate 10.

The bass sound film 18 is located away from the outer edge of the substrate 10 in a plan view from the thickness direction of the substrate 10.

The first electronic component 1 according to Example 1 further includes an insulating layer 14 that covers a region of the first main surface 10A of the substrate 10 that is not covered by the bass sound film 18. The insulating layer 14 has electrical insulation. A part of the insulating layer 14 is formed on the first main surface 10A of the substrate 10. The insulating layer 14 includes a first portion surrounding the plurality of first IDT electrodes 516 and a second portion surrounding the plurality of second IDT electrodes 526. A part of the insulating layer 14 overlaps the outer peripheral portion of the piezoelectric layer 19 in the thickness direction of the substrate 10. The outer peripheral surface of the piezoelectric layer 19 and the outer peripheral surface of the low sound velocity film 18 are covered with the insulating layer 14. The material of the insulating layer 14 is an epoxy resin, polyimide, or the like.

The material of the piezoelectric layer 19 is, for example, lithium niobate or lithium tantalate. The low sound velocity film 18 is a film in which the sound velocity of the bulk wave propagating in the low tone velocity film 18 is lower than the sound velocity of the bulk wave propagating in the piezoelectric layer 19. The material of the low sound velocity film 18 is, for example, silicon oxide, but is not limited to silicon oxide, and at least one material selected from the group consisting of tantalum oxide and a compound obtained by adding fluorine, carbon or boron to silicon oxide. It may consist of. On the substrate 10, the speed of sound of the bulk wave propagating on the substrate 10 is higher than the speed of sound of the elastic wave propagating on the piezoelectric layer 19. Here, the bulk wave propagating on the substrate 10 is the lowest sound velocity bulk wave among the plurality of bulk waves propagating on the substrate 10.

The first electronic component 1 according to Example 1 may further have a high sound velocity film provided between the substrate 10 and the low sound velocity film 18. The high sound velocity film is a film in which the sound velocity of the bulk wave propagating in the high sound velocity film is higher than the sound velocity of the elastic wave propagating in the piezoelectric layer 19. The material of the treble velocity film is, for example, silicon nitride, but is not limited to silicon nitride, and is not limited to diamond-like carbon, aluminum nitride, silicon carbide, silicon nitride, silicon oxynitride, silicon, sapphire, lithium tantalate, and lithium niobate. , Crystal, zirconia, cordylite, mulite, steatite, forsterite, magnesia and diamond may consist of at least one material selected from the group.

The thickness of the piezoelectric layer 19 is, for example, 3.5λ or less when the wavelength of the elastic wave determined by the finger period of each of the first IDT electrode 516 and the second IDT electrode 526 is λ. The thickness of the bass sound film 18 is, for example, 2.0λ or less.

The first electronic component 1 according to Example 1 may include, for example, an adhesion layer interposed between the low sound velocity film 18 and the piezoelectric layer 19. The adhesion layer is made of, for example, a resin (epoxy resin, polyimide resin). Further, the first electronic component 1 may be provided with a dielectric film between the low sound velocity film 18 and the piezoelectric layer 19, either on the piezoelectric layer 19 or under the low sound velocity film 18.

The second electronic component 2 according to Example 1 employs a silicon substrate instead of the piezoelectric substrate as the substrate 20, and similarly to the first electronic component 1 according to Example 1, the silicon substrate, the bass velocity film, and the piezoelectric layer. A piezoelectric substrate containing the above is adopted. The third electronic component 3 according to Example 1 employs a silicon substrate instead of the piezoelectric substrate as the substrate 30, and similarly to the first electronic component 1 according to Example 1, the silicon substrate, the bass velocity film, and the piezoelectric layer. A piezoelectric substrate containing the above is adopted.

(3.2) Example 2 of the first electronic component, Example 2 of the second electronic component, Example 2 of the third electronic component
The first electronic component 1 according to Example 2 will be described with reference to FIG. In the first electronic component 1 according to the second embodiment, the same components as those of the first electronic component 1 of the high frequency module 200 according to the first embodiment are designated by the same reference numerals, and the description thereof will be omitted as appropriate.

In the first electronic component 1 according to Example 2, the substrate 10 is a silicon substrate. The substrate 10 has a first main surface 10A and a second main surface 10B facing each other in the thickness direction of the substrate 10. The first electronic component 1 according to Example 2 includes an electric insulating film 12 formed on the first main surface 10A of the substrate 10. The material of the electric insulating film 12 is, for example, silicon oxide.

In the first electronic component 1 according to Example 2, each of the first transmission filter 51 and the second transmission filter 52 is a bulk elastic wave filter. In the first transmission filter 51, each of the plurality of elastic wave resonators is the first BAW resonator 518. In the second transmission filter 52, each of the plurality of elastic wave resonators is the second BAW resonator 528.

The first BAW resonator 518 includes a first electrode 5181, a piezoelectric film 5182, and a second electrode 5183. The piezoelectric film 5182 is formed on the first electrode 5181. The second electrode 5183 is formed on the piezoelectric film 5182. The material of the piezoelectric film 5182 is, for example, AlN, ScAlN or PZT. In the first BAW resonator 518, the thickness of the piezoelectric film 5182 is determined based on the pass band of the first transmission filter 51.

The first BAW resonator 518 has a cavity 5184 on the side of the first electrode 5181 opposite to the piezoelectric film 5182 side. The first BAW resonator 518 can suppress the propagation of elastic wave energy to the substrate 10 side by increasing the acoustic impedance ratio between the first electrode 5181 and the medium directly under the first electrode 5181, and has a cavity 5184. The electromechanical coupling coefficient can be increased as compared with the case where it is not performed. The first BAW resonator 518 is an FBAR (Film Bulk Acoustic Resonator).

The second BAW resonator 528 includes a first electrode 5281, a piezoelectric film 5582, and a second electrode 5283. The piezoelectric film 5582 is formed on the first electrode 5281. The second electrode 5283 is formed on the piezoelectric film 5282. The material of the piezoelectric film 5482 is, for example, AlN, ScAlN or PZT. In the second BAW resonator 528, the thickness of the piezoelectric film 5582 is determined based on the pass band of the second transmission filter 52.

The second BAW resonator 528 has a cavity 5284 on the side of the first electrode 5281 opposite to the piezoelectric film 5482 side. The second BAW resonator 528 is an FBAR. The second BAW resonator 528 has a structure similar to that of the first BAW resonator 518.

The first electronic component 1 according to Example 2 includes a spacer layer 16, a cover member 17, and a plurality of first external terminals 15 as constituent elements of the package structure.

The spacer layer 16 is provided on the side of the electric insulating film 12 opposite to the first main surface 10A side of the substrate 10. The spacer layer 16 surrounds a plurality of first BAW resonators 518 and a plurality of second BAW resonators 528 in a plan view from the thickness direction of the substrate 10. In a plan view from the thickness direction of the substrate 10, the spacer layer 16 includes a rectangular frame-shaped portion formed along the outer edge of the substrate 10. The spacer layer 16 has electrical insulation. The material of the spacer layer 16 is an epoxy resin, polyimide, or the like. The cover member 17 has a flat plate shape. The cover member 17 is arranged on the spacer layer 16 so as to face the electric insulating film 12 in the thickness direction of the substrate 10. The cover member 17 overlaps the plurality of first BAW resonators 518 and the plurality of second BAW resonators 528 in the thickness direction of the substrate 10, and the plurality of first BAW resonators 518 and the plurality of first BAW resonators 518 in the thickness direction of the substrate 10. It is far from the 2BAW resonator 528. The cover member 17 has electrical insulation. The material of the cover member 17 is epoxy resin, polyimide, or the like. The plurality of first external terminals 15 are exposed from the cover member 17. The first electronic component 1 may have a configuration that does not include the electric insulating film 12.

The second electronic component 2 according to Example 2 will be described with reference to FIG. In the second electronic component 2 according to the second embodiment, the same components as those of the second electronic component 2 of the high frequency module 200 according to the first embodiment are designated by the same reference numerals, and the description thereof will be omitted as appropriate.

In the second electronic component 2 according to Example 2, the substrate 20 is a silicon substrate. The substrate 20 has a first main surface 20A and a second main surface 20B facing each other in the thickness direction of the substrate 20. The second electronic component 2 according to Example 2 includes an electric insulating film 22 formed on the first main surface 20A of the substrate 20. The second electronic component 2 according to Example 2 includes a spacer layer 26, a cover member 27, and a plurality of second external terminals 25 as components of the package structure. The spacer layer 26 is provided on the side of the electric insulating film 22 opposite to the first main surface 20A side of the substrate 20. The material of the electric insulating film 22 is, for example, silicon oxide. The second electronic component 2 may have a configuration that does not include the electric insulating film 22.

In the second electronic component 2 according to Example 2, the third transmission filter 53 is a bulk elastic wave filter. In the third transmission filter 53, each of the plurality of elastic wave resonators is the third BAW resonator 538.

The third BAW resonator 538 includes a first electrode 5381, a piezoelectric film 5382, and a second electrode 5383. The piezoelectric film 5382 is formed on the first electrode 5381. The second electrode 5383 is formed on the piezoelectric film 5382. The material of the piezoelectric film 5382 is, for example, AlN, ScAlN or PZT. In the third BAW resonator 538, the thickness of the piezoelectric film 5382 is determined based on the pass band of the third transmission filter 53.

The third BAW resonator 538 has a cavity 5384 on the side of the first electrode 5381 opposite to the piezoelectric film 5382 side. The third BAW resonator 538 is an FBAR.

The third electronic component 3 according to Example 2 will be described with reference to FIG. In the third electronic component 3 according to the second embodiment, the same components as those of the third electronic component 3 of the high frequency module 200 according to the first embodiment are designated by the same reference numerals, and the description thereof will be omitted as appropriate.

In the third electronic component 3 according to Example 2, the substrate 30 is a silicon substrate. The substrate 30 has a first main surface 30A and a second main surface 30B facing each other in the thickness direction of the substrate 30. The third electronic component 3 according to Example 2 includes an electric insulating film 32 formed on the first main surface 30A of the substrate 30. The third electronic component 3 according to Example 2 includes a spacer layer 36, a cover member 37, and a plurality of third external terminals 35 as components of the package structure. The spacer layer 36 is provided on the side of the electric insulating film 32 opposite to the first main surface 30A side of the substrate 30. The material of the electric insulating film 32 is, for example, silicon oxide. The third electronic component 3 may have a configuration that does not include the electric insulating film 32.

In the third electronic component 3 according to Example 2, the first receiving filter 61 is a bulk elastic wave filter. In the first reception filter 61, each of the plurality of elastic wave resonators is a BAW resonator 618.

The BAW resonator 618 includes a first electrode 6181, a piezoelectric film 6182, and a second electrode 6183. The piezoelectric film 6182 is formed on the first electrode 6181. The second electrode 6183 is formed on the piezoelectric film 6182. The material of the piezoelectric film 6182 is, for example, AlN, ScAlN or PZT. In the BAW resonator 618, the thickness of the piezoelectric film 6182 is determined based on the pass band of the first reception filter 61.

The BAW resonator 618 has a cavity 6184 on the side of the first electrode 6181 opposite to the piezoelectric film 6182 side. The BAW resonator 618 is an FBAR.

In the third electronic component 3 according to Example 2, the second receiving filter 62 is a bulk elastic wave filter. In the second receiving filter 62, each of the plurality of elastic wave resonators is a BAW resonator 628.

The BAW resonator 628 includes a first electrode 6281, a piezoelectric film 6282, and a second electrode 6283. The piezoelectric film 6282 is formed on the first electrode 6281. The second electrode 6283 is formed on the piezoelectric film 6282. The material of the piezoelectric film 6282 is, for example, AlN, ScAlN or PZT. In the BAW resonator 628, the thickness of the piezoelectric film 6282 is determined based on the pass band of the second reception filter 62.

The BAW resonator 628 has a cavity 6284 on the side of the first electrode 6281 opposite to the piezoelectric film 6282 side. The BAW resonator 628 is an FBAR.

In the third electronic component 3 according to Example 2, the third receiving filter 63 is a bulk elastic wave filter. In the third receiving filter 63, each of the plurality of elastic wave resonators is a BAW resonator 638.

The BAW resonator 638 includes a first electrode 6381, a piezoelectric film 6382, and a second electrode 6383. The piezoelectric film 6382 is formed on the first electrode 6381. The second electrode 6383 is formed on the piezoelectric film 6382. The material of the piezoelectric film 6382 is, for example, AlN, ScAlN or PZT. In the BAW resonator 638, the thickness of the piezoelectric film 6382 is determined based on the pass band of the third reception filter 63.

The BAW resonator 638 has a cavity 6384 on the side of the first electrode 6381 opposite to the piezoelectric film 6382 side. The BAW resonator 638 is an FBAR.

In the third electronic component 3 according to Example 2, the fourth receiving filter 64 is a bulk elastic wave filter. In the fourth receiving filter 64, each of the plurality of elastic wave resonators is a BAW resonator.

(3.3) Example 3 of the first electronic component, Example 3 of the second electronic component, Example 3 of the third electronic component
In the first electronic component according to Example 3, instead of forming a cavity 5184 in the substrate 10 in the plurality of first BAW resonators 518 of the first transmission filter 51 in the first electronic component 1 (see FIG. 11) according to Example 2. , A part of the electric insulating film 12 may be arranged so as to form a cavity between the electric insulating film 12 and the first main surface 10A of the substrate 10. In this case, the first electrode 5181 is formed on the side of the electrical insulating film 12 opposite to the cavity side, the piezoelectric film 5182 is formed on the first electrode 5181, and the second electrode 5183 is formed on the piezoelectric film 5182. The structure may be the same. The cavity between a part of the electric insulating film 12 and the first main surface 10A of the substrate 10 can be formed by using, for example, a sacrificial layer etching technique. Further, in the first electronic component according to Example 3, a cavity 5284 is formed in the substrate 10 in the plurality of second BAW resonators 528 of the second transmission filter 52 in the first electronic component 1 (see FIG. 11) according to Example 2. Alternatively, a part of the electric insulating film 12 may be arranged so as to form a cavity between the electric insulating film 12 and the first main surface 10A of the substrate 10. In this case, the first electrode 5281 is formed on the side of the electrical insulating film 12 opposite to the cavity side, the piezoelectric film 5482 is formed on the first electrode 5281, and the second electrode 5283 is formed on the piezoelectric film 5282. The structure may be the same. The substrate 10 is not limited to a silicon substrate, and may be, for example, a spinel substrate.

In the second electronic component according to Example 3, instead of forming the cavity 5384 in the substrate 20 in the plurality of third BAW resonators 538 of the third transmission filter 53 in the second electronic component 2 (see FIG. 12) according to Example 2. , A part of the electric insulating film 22 may be arranged so as to form a cavity between the electric insulating film 22 and the first main surface 20A of the substrate 20. In this case, the first electrode 5381 is formed on the side of the electrical insulating film 22 opposite to the cavity side, the piezoelectric film 5382 is formed on the first electrode 5381, and the second electrode 5383 is formed on the piezoelectric film 5382. The structure may be the same. The substrate 20 is not limited to a silicon substrate, and may be, for example, a spinel substrate.

In the third electronic component according to Example 3, instead of forming a cavity 6184 in the substrate 30 in the plurality of BAW resonators 618 of the first receiving filter 61 in the third electronic component 3 (see FIG. 13) according to Example 2. A part of the electric insulating film 32 may be arranged so as to form a cavity between the electric insulating film 32 and the first main surface 30A of the substrate 30. In this case, the first electrode 6181 is formed on the side of the electrical insulating film 32 opposite to the cavity side, the piezoelectric film 6182 is formed on the first electrode 6181, and the second electrode 6183 is formed on the piezoelectric film 6182. The structure may be the same. The substrate 30 is not limited to a silicon substrate, and may be, for example, a spinel substrate. Further, in the third electronic component according to Example 3, instead of forming a cavity 6284 in the substrate 30 in the plurality of BAW resonators 628 of the second receiving filter 62 in the third electronic component 3 (see FIG. 13) according to Example 2. In addition, a part of the electric insulating film 32 may be arranged so as to form a cavity between the electric insulating film 32 and the first main surface 30A of the substrate 30. In this case, the first electrode 6281 is formed on the side of the electrical insulating film 32 opposite to the cavity side, the piezoelectric film 6282 is formed on the first electrode 6281, and the second electrode 6283 is formed on the piezoelectric film 6282. The structure may be the same. Further, in the third electronic component according to Example 3, instead of forming the cavity 6384 in the substrate 30 in the plurality of BAW resonators 638 of the third receiving filter 63 in the third electronic component 3 (see FIG. 13) according to Example 2. In addition, a part of the electric insulating film 32 may be arranged so as to form a cavity between the electric insulating film 32 and the first main surface 30A of the substrate 30. In this case, the first electrode 6381 is formed on the side of the electrical insulating film 32 opposite to the cavity side, the piezoelectric film 6382 is formed on the first electrode 6381, and the second electrode 6383 is formed on the piezoelectric film 6382. The structure may be the same. The structure of the fourth reception filter 64 is the same as the structure of the third reception filter 63.

(3.4) Example 4 of the first electronic component, Example 4 of the second electronic component, Example 4 of the third electronic component
In the first electronic component according to Example 4, each of the plurality of elastic wave resonators of the first transmission filter 51 and the plurality of elastic wave resonators of the second transmission filter 52 in the first electronic component 1 according to Example 2 is FBAR. It is not SMR (Solidly Mounted Resonator). Further, in the second electronic component according to Example 4, each of the plurality of elastic wave resonators of the third transmission filter 53 in the second electronic component 2 according to Example 2 is not FBAR but SMR. Further, in the third electronic component according to Example 4, the plurality of elastic wave resonators of the first reception filter 61, the plurality of elastic wave resonators of the second reception filter 62, and the second one in the third electronic component 3 according to Example 2. 3 Each of the plurality of elastic wave resonators of the reception filter 63 is an SMR, not an FBAR.

(Embodiment 2)
The high frequency module 200a according to the second embodiment will be described with reference to FIG. Regarding the high frequency module 200a according to the second embodiment, the same components as the high frequency module 200 according to the first embodiment are designated by the same reference numerals and the description thereof will be omitted.

In the high frequency module 200a according to the second embodiment, the first communication band corresponding to the first transmission filter 51 is Band 1 of the 3GPP LTE standard, and the second communication band corresponding to the second transmission filter 52 is the Band 66 of the 3GPP LTE standard. It differs from the high frequency module 200 according to the first embodiment in that the third communication band supported by the third transmission filter 53 is Band 3 of the 3GPP LTE standard.

The frequency difference between the transmission band of the third communication band and the reception band of the third communication band is smaller than the frequency difference between the transmission band of the first communication band and the reception band of the first communication band, and It is smaller than the frequency difference between the transmission band of the second communication band and the reception band of the second communication band. The frequency difference between the Band 3 transmission band and the Band 3 reception band is 20 MHz. The frequency difference between the Band 1 transmission band and the Band 1 reception band is 130 MHz. The frequency difference between the Band 66 transmission band and the Band 66 reception band is 330 MHz.

In the high frequency module 200a, similarly to the high frequency module 200 according to the first embodiment, the first electronic component 1 includes the first transmission filter 51 and the second transmission filter 52, and the second electronic component 2 includes the third transmission filter 53. Since the third electronic component 3 includes the first reception filter 61, the second reception filter 62, and the third reception filter 63, it is possible to reduce the size.

Further, the high frequency module 200a has a second transmission filter 53 corresponding to Band 3 having the smallest frequency difference between the transmission band and the reception band among the first transmission filter 51, the second transmission filter 52, and the third transmission filter 53. Since the first electronic component 1 includes the first transmission filter 51 and the second transmission filter 52 in the electronic component 2, it is possible to suppress the temperature rise of the first electronic component 1.

(Embodiment 3)
The high frequency module 200b according to the third embodiment will be described with reference to FIG. Regarding the high frequency module 200b according to the third embodiment, the same components as the high frequency module 200 according to the first embodiment are designated by the same reference numerals and the description thereof will be omitted.

The high frequency module 200b according to the third embodiment is different from the high frequency module 200 according to the first embodiment in that the third transmission filter included in the second electronic component 2 is not the transmission filter 53 but the transmission filter 54.

The transmission filter 54 is a transmission filter connected to the first power amplifier 71 instead of the second power amplifier 72. In the high frequency module 200b, the third communication band is Band 41 of the 3GPP LTE standard.

The first power amplifier 71 corresponds to the first power class, and the second power amplifier 72 corresponds to the second power class. The maximum output power of the first power class is larger than the maximum output power of the second power class. The third transmission filter (transmission filter 54) is connected to the first power amplifier 71. As a result, the high frequency module 200b can suppress the temperature rise of the third transmission filter (transmission filter 54) connected to the first power amplifier 71, which has a larger maximum output power than the second power amplifier 72.

In the high frequency module 200b according to the third embodiment, the first electronic component 1 includes a first transmission filter 51 and a second transmission filter 52, and the second electronic component 2 includes a third transmission filter (transmission filter 54). Since the 3 electronic component 3 includes the first reception filter 61, the second reception filter 62, and the third reception filter (reception filter 64), it is possible to reduce the size.

(Embodiment 4)
The high frequency module 200c according to the fourth embodiment will be described with reference to FIGS. 16 and 17. Regarding the high frequency module 200c according to the fourth embodiment, the same components as the high frequency module 200 according to the first embodiment are designated by the same reference numerals and the description thereof will be omitted.

The high frequency module 200c according to the fourth embodiment is different from the high frequency module 200 according to the first embodiment in that a plurality of external connection terminals T0 are ball bumps. Further, the high frequency module 200c according to the fourth embodiment is different from the high frequency module 200 according to the first embodiment in that the second resin layer 190 of the high frequency module 200 according to the first embodiment is not provided. The high-frequency module 200c according to the fourth embodiment is provided in the first gap between the fourth electronic component 4 mounted on the second main surface 92 of the mounting board 9 and the second main surface 92 of the mounting board 9. The underfill portion may be provided with a second underfill portion provided in the gap between the sixth electronic component 8 and the second main surface 92 of the mounting board 9.

The material of the ball bump constituting each of the plurality of external connection terminals T0 is, for example, gold, copper, solder, or the like.

The plurality of external connection terminals T0 may be a mixture of an external connection terminal T0 composed of ball bumps and an external connection terminal T0 composed of columnar electrodes.

(Modification example)
The above-mentioned embodiments 1 to 4 and the like are only one of various embodiments of the present invention. The above-described embodiments 1 to 4 and the like can be variously modified according to the design and the like as long as the object of the present invention can be achieved, and different components of different embodiments may be appropriately combined.

In the

high frequency modules

200, 200a, 200b, and 200c, the second electronic component 2 is smaller than the third electronic component 3 in the plan view from the thickness direction D1 of the mounting substrate 9, but the first electronic component 1 is also the third. It may be smaller than the electronic component 3.

Further, the third electronic component 3 may include the first reception filter 61, the second reception filter 62, and the third reception filter 63, and may not include the fourth reception filter 64. That is, the fourth reception filter 64 may be a separate body (separate electronic component) from the third electronic component 3.

Further, the

high frequency modules

200, 200a, 200b, and 200c may have a configuration in which the second electronic component 2 is mounted on the second main surface 92 instead of the first main surface 91 of the mounting board 9. Further, the

high frequency modules

200, 200a, 200b, and 200c may have a configuration in which the third electronic component 3 is mounted on the second main surface 92 instead of the first main surface 91 of the mounting board 9.

Further, in the high frequency module 200, the first electronic component 1 includes a first transmission filter 51 corresponding to the first communication band and a second transmission filter 52 corresponding to the second communication band, and the second electronic component 2 is a third. A first reception filter 61 and a second communication band in which the third electronic component 3 corresponds to the first communication band, including a third transmission filter 53 corresponding to the communication band and a fourth transmission filter 54 corresponding to the fourth communication band. The configuration may include a second reception filter 62 corresponding to the above, a third reception filter 63 corresponding to the third communication band, and a fourth reception filter 64 corresponding to the fourth communication band. In this case, the first communication band, the second communication band, the third communication band, and the fourth communication band are Band1, Band66, Band3, and Band25, respectively.

In the

high frequency modules

200 and 200c, the first communication band is 3GPP LTE standard Band 1 or 5G NR standard n1, and the second communication band is 3GPP LTE standard Band 3 or 5G NR standard n3, and the third communication. The band may include at least 3GPP LTE standard Band66 or 5G NR standard n66 among 3GPP LTE standard Band66 or 5G NR standard n66 and 3GPP LTE standard Band70 or 5G NR standard n70. ..

Further, in the

high frequency modules

200 and 200c, when the third electronic component 3 further includes a fourth reception filter 64 having a pass band including the reception band of the fourth communication band, the third communication band is Band 66 of the 3GPP LTE standard or 5G NR standard n66, and the 4th communication band is at least 3GPP LTE standard Band25 or 5G out of 3GPP LTE standard Band25 or 5G NR standard n25 and 3GPP LTE standard Band70 or 5G NR standard n70. It may contain n25 of the NR standard.

Further, in the high frequency module 200a, the first communication band is 3GPP LTE standard Band 1 or 5G NR standard n1, and the second communication band is 3GPP LTE standard Band 66 or 5G NR standard n70, and the third communication. The band may be Band 3 of 3GPP LTE standard or n3 of 5G NR standard.

In the

high frequency modules

200, 200a, 200b, and 200c, the resin layer 170 does not only cover the entire outer peripheral surface 13 of the first electronic component 1, but may cover at least a part of the outer peripheral surface 13. .. Further, the resin layer 170 is not limited to the case where the entire outer peripheral surface 23 of the second electronic component 2 is covered, and may cover at least a part of the outer peripheral surface 23. Further, the resin layer 170 is not limited to the case where the entire outer peripheral surface 33 of the third electronic component 3 is covered, and may cover at least a part of the outer peripheral surface 33.

Further, in the

high frequency modules

200, 200a, 200b, and 200c, the shield layer 180 covers at least a part of the main surface 171 of the resin layer 170, not only when the shield layer 180 covers the entire main surface 171 of the resin layer 170. You just have to. Further, in the

high frequency modules

200, 200a, 200b, and 200c, the shield layer 180 is not limited to the case where the shield layer 180 covers all of the main surface 11 on the side opposite to the mounting board 9 side in the first electronic component 1, but also on the main surface. It suffices to cover at least a part of 11. Further, in the

high frequency modules

200, 200a, 200b, and 200c, the shield layer 180 is not limited to the case where the shield layer 180 covers the entire main surface 21 on the side opposite to the mounting board 9 side in the second electronic component 2, and is not limited to the case where the main surface is covered. It suffices to cover at least a part of 21.

Further, each of the plurality of transmission filters 51 to 54 and the plurality of reception filters 61 to 69 is not limited to the ladder type filter, and may be, for example, a longitudinally coupled resonator type elastic surface wave filter.

Further, the above-mentioned elastic wave filter is an elastic wave filter that utilizes a surface acoustic wave or a bulk elastic wave, but is not limited to this, and may be, for example, an elastic wave filter that utilizes an elastic boundary wave, a plate wave, or the like. good.

The circuit configuration of the

high frequency modules

200, 200a, 200b, and 200c is not limited to the example of FIG. 9 described above.

Further, the communication device 300 according to the first embodiment may include any one of the

high frequency modules

200a, 200b, and 200c instead of the high frequency module 200.

(Aspect)
The following aspects are disclosed herein.

The high frequency module (200; 200a; 200b; 200c) according to the first aspect includes a mounting board (9), a first electronic component (1), a second electronic component (2), and a third electronic component (3). ) And. The mounting board (9) has a first main surface (91) and a second main surface (92) facing each other. The first electronic component (1) is mounted on the first main surface (91) of the mounting board (9). The second electronic component (2) is mounted on the mounting board (9). The third electronic component (3) is mounted on the mounting board (9). The first electronic component (1) includes a first transmission filter (51) and a second transmission filter (52). The first transmission filter (51) has a pass band including the transmission band of the first communication band. The second transmission filter (52) has a pass band including a transmission band of the second communication band different from the first communication band. The first electronic component (1) has a substrate (10) common to the first transmission filter (51) and the second transmission filter (52). The second electronic component (2) includes a third transmission filter (53; 54). The third transmission filter (53; 54) has a pass band including the transmission band of the third communication band. The third communication band is different from the first communication band and the second communication band. The third electronic component (3) includes a first receiving filter (61), a second receiving filter (62), and a third receiving filter (63; 64). The first reception filter (61) has a pass band including the reception band of the first communication band. The second reception filter (62) has a pass band including the reception band of the second communication band. The third reception filter (63; 64) has a pass band including the reception band of the third communication band. The third electronic component (3) has a substrate (30) common to the first receiving filter (61), the second receiving filter (62), and the third receiving filter (63; 64).

The high frequency module (200; 200a; 200b; 200c) according to the first aspect can be miniaturized.

In the high frequency module (200; 200a; 200b; 200c) according to the second aspect, in the first aspect, the first electronic component (1) has a plurality of first external terminals (15) and a plurality of first external terminals (15). 1 It is connected to the first main surface (91) of the mounting board (9) by an external terminal (15). The second electronic component (2) has a plurality of second external terminals (25) and is connected to the mounting board (9) by the plurality of second external terminals (25). The third electronic component (3) has a plurality of third external terminals (35) and is connected to the mounting board (9) by the plurality of third external terminals (35).

The high frequency module (200; 200a; 200b; 200c) according to the second aspect can be miniaturized.

In the high frequency module (200; 200a; 200c) according to the third aspect, in the first or second aspect, the first transmission filter (51) is viewed in a plan view from the thickness direction (D1) from the mounting substrate (9). ) Is smaller than the second transmission filter (52) and the third transmission filter (53).

In the high frequency module (200; 200a; 200c) according to the third aspect, the first electronic component (1) and the first electronic component (1) due to the difference in linear expansion coefficient between the first electronic component (1) and the mounting substrate (9) during operation. The stress applied to the joint portion (plurality of first external terminals 15) can be reduced, and the connection reliability between the first electronic component (1) and the mounting substrate (9) can be improved.

In the high frequency module (200; 200c) according to the fourth aspect, in any one of the first to third aspects, the combination of the first communication band and the second communication band is a combination capable of simultaneous communication.

The high frequency module (200; 200c) according to the fourth aspect can reduce the loss when performing simultaneous communication.

In the high frequency module (200; 200c) according to the fifth aspect, in any one of the first to fourth aspects, the first communication band is Band 1 of the 3GPP LTE standard or n1 of the 5G NR standard, and the second. The communication band is 3GPP LTE standard Band3 or 5G NR standard n3, and the third communication band is 3GPP LTE standard Band66 or 5G NR standard n66 and 3GPP LTE standard Band70 or 5G NR standard n70. Among them, at least 3GPP LTE standard Band66 or 5G NR standard n66 is included.

In the high frequency module (200; 200c) according to the fifth aspect, the isolation between the second transmission filter (52) corresponding to the second communication band and the third transmission filter (53) corresponding to the third communication band is improved. It is possible to make it.

In the high frequency module (200; 200c) according to the sixth aspect, in the fifth aspect, the third electronic component (3) has a pass band including the reception band of the fourth communication band (64). Further includes. The third communication band is Band66 of 3GPP LTE standard or n66 of 5G NR standard. The fourth communication band includes at least 3GPP LTE standard Band 25 or 5G NR standard n25 among 3GPP LTE standard Band 25 or 5G NR standard n25 and 3GPP LTE standard Band 70 or 5G NR standard n70.

In the high frequency module (200a) according to the seventh aspect, in any one of the first to third aspects, the frequency difference between the transmission band of the third communication band and the reception band of the third communication band is the third. It is smaller than the frequency difference between the transmission band of the 1 communication band and the reception band of the 1st communication band, and smaller than the frequency difference between the transmission band of the 2nd communication band and the reception band of the 2nd communication band. ..

In the high frequency module (200a) according to the seventh aspect, the third transmission filter (53), which tends to generate heat as compared with the first transmission filter (51) and the second transmission filter (52), is the first electronic component (1). Is included in another second electronic component (2), so that it is possible to suppress the temperature rise of the first transmission filter (51) and the second transmission filter (52).

In the high frequency module (200a) according to the eighth aspect, in the seventh aspect, the combination of the third communication band and the first communication band and the combination of the third communication band and the second communication band are simultaneously received. Neither is an acceptable combination of and simultaneous transmission.

In the high frequency module (200a) according to the ninth aspect, in the seventh or eighth aspect, the first communication band is Band 1 of the 3GPP LTE standard or n1 of the 5G NR standard, and the second communication band is the 3GPP LTE standard. Band 66 or 5G NR standard n70, and the third communication band is 3GPP LTE standard Band 3 or 5G NR standard n3.

The high frequency module (200b) according to the tenth aspect further includes a first power amplifier (71) and a second power amplifier (72) in any one of the first to third aspects. The first power amplifier (71) corresponds to the first power class, and the second power amplifier (72) corresponds to the second power class. The maximum output power of the first power class is larger than the maximum output power of the second power class. The first transmission filter (51) and the second transmission filter (52) can be connected to the second power amplifier (72). The third transmission filter (54) is connected to the first power amplifier (71).

In the high frequency module (200b) according to the tenth aspect, the temperature of the third transmission filter (54) connected to the first power amplifier (71) having a larger maximum output power than that of the second power amplifier (72) rises. Can be suppressed.

In the high frequency module (200b) according to the eleventh aspect, in the tenth aspect, the third communication band is Band 41 of the 3GPP LTE standard.

In the high frequency module (200; 200a; 200b; 200c) according to the twelfth aspect, in any one of the first to eleventh aspects, the first transmission filter (51), the second transmission filter (52) and the third transmission filter (52) are used. Each of the transmission filters (53; 54) is an elastic wave filter.

In the high frequency module (200; 200a; 200b; 200c) according to the thirteenth aspect, in any one of the first to twelfth aspects, the first receiving filter (61), the second receiving filter (62) and the third receiving filter (62). Each of the receiving filters (63; 64) is an elastic wave filter.

In the high frequency module (200; 200a; 200b; 200c) according to the fourteenth aspect, in the twelfth or thirteenth aspect, the surface acoustic wave filter is a surface acoustic wave filter.

In the high frequency module (200; 200a; 200b; 200c) according to the fourteenth aspect, for example, the second transmission filter (52) corresponding to the second communication band and the third transmission filter (53;) corresponding to the third communication band; When simultaneous transmission with 54) is performed, it is possible to suppress the surface acoustic wave of the second transmission filter (52) from generating spurious in the third transmission filter (53; 54).

In the high frequency module (200; 200a; 200b; 200c) according to the fifteenth aspect, in the twelfth or thirteenth aspect, the elastic wave filter is a bulk elastic wave filter.

The high frequency module (200; 200a; 200b; 200c) according to the sixteenth aspect further includes a resin layer (170) and a shield layer (180) in any one of the first to fifteenth aspects. The resin layer (170) is arranged on the first main surface (91) of the mounting substrate (9), and at least the outer peripheral surface (13) of the first electronic component (1) and the outer peripheral surface of the second electronic component (2). It covers the surface (23) and the outer peripheral surface (33) of the third electronic component (3). The shield layer (180) covers the resin layer (170), and the first electronic component (1), the second electronic component (2), and the second electronic component (2) in a plan view from the thickness direction (D1) of the mounting substrate (9). Third electronic component (3) Overlaps at least a part of each. The shield layer (180) is in contact with the main surface (11) of the first electronic component (1) on the side opposite to the mounting board (9) side.

Since the high frequency module (200; 200a; 200b; 200c) according to the sixteenth aspect can easily dissipate the heat generated in the first electronic component (1) through the shield layer (180), the first electronic component (1) can be easily dissipated. ) Can suppress the temperature rise.

The high frequency module (200; 200a; 200b; 200c) according to the 17th aspect further includes a plurality of external connection terminals (T0) in any one of the 1st to 16th aspects. The plurality of external connection terminals (T0) are arranged on the second main surface (92) of the mounting board (9).

The high frequency module (200; 200a; 200b; 200c) according to the eighteenth aspect further includes a fourth electronic component (4) in the seventeenth aspect. The fourth electronic component (4) is mounted on the second main surface (92) of the mounting board (9).

The high frequency module (200; 200a; 200b; 200c) according to the eighteenth aspect can be miniaturized in a configuration including the fourth electronic component (4).

In the high frequency module (200; 200a; 200b; 200c) according to the nineteenth aspect, in the eighteenth aspect, the fourth electronic component (4) includes a first transmission filter (51) and a second transmission filter (52). It is an IC chip including a switch (second switch 105) to which a third transmission filter (53) is connected. The fourth electronic component (4) overlaps the first electronic component (1) and the second electronic component (2) in a plan view from the thickness direction (D1) of the mounting substrate (9).

In the high frequency module (200; 200a; 200b; 200c) according to the nineteenth aspect, the first transmission filter (51), the second transmission filter (52), the third transmission filter (53), and the switch (second switch 105) are used. ), It is possible to shorten the wiring length, and it is possible to improve the filter performance of each of the first transmission filter (51), the second transmission filter (52), and the third transmission filter (53). Become.

The communication device (300) according to the twentieth aspect includes a high frequency module (200; 200a; 200b; 200c) according to any one of the first to nineteenth aspects, and a signal processing circuit (301). The signal processing circuit (301) is connected to a high frequency module (200; 200a; 200b; 200c).

The communication device (300) according to the twentieth aspect can be miniaturized.

1 1st electronic component 10 Substrate 10A 1st main surface 10B 2nd main surface 11 Main surface 12 Electrical insulating film 13 Outer peripheral surface 14 Insulation layer 15 1st external terminal 16 Spacer layer 17 Cover member 18 Bass velocity film 19 Piezoelectric layer 2 2nd electronic component 20 board 20A 1st main surface 20B 2nd main surface 21 main surface 22 electrical insulation film 23 outer peripheral surface 25 2nd external terminal 26 spacer layer 27 cover member 3 3rd electronic component 30 board 30A 1st main surface 30B 2nd main surface 31 Main surface 32 Electrical insulation film 33 Outer surface 35 3rd external terminal 36 Spacer layer 37 Cover member 4 4th electronic component 41 Main surface 43 Outer surface 45 4th external terminal 51 Transmission filter (1st transmission filter)
516 1st IDT electrode 517 Reflector 518 1st BAW resonator 5181 1st electrode 5182 Piezoelectric membrane 5183 2nd electrode 5184 Cavity 52 Transmission filter (2nd transmission filter)
526 2nd IDT electrode 527 Reflector 528 2nd BAW resonator 5281 1st electrode 5582 Piezoelectric film 5283 2nd electrode 5284 Cavity 53 Transmission filter (3rd transmission filter)
536 3rd IDT electrode 538 3rd BAW resonator 5381 1st electrode 5382 Piezoelectric membrane 5383 2nd electrode 5384 Cavity 54 Transmission filter (3rd transmission filter)
6 Fifth electronic component 61 Receive filter (first receive filter)
618 BAW resonator 6181 1st electrode 6182 Piezoelectric film 6183 2nd electrode 6184 Cavity 62 Receiving filter (2nd receiving filter)
628 BAW resonator 6281 1st electrode 6828 Piezoelectric film 6283 2nd electrode 6284 Cavity 63 Receiving filter (3rd receiving filter)
638 BAW resonator 6381 1st electrode 6382 Piezoelectric film 6383 2nd electrode 6384 Cavity 64 Receiving filter (3rd receiving filter)
65 Receive filter 66 Receive filter 67 Receive filter 68 Receive filter 69 Receive filter 71 Power amplifier (first power amplifier)
72 power amplifier (second power amplifier)
8 6th electronic component 80 Amplifier 81-89 Low noise amplifier 801 Main surface 803 Outer surface 805 6th external terminal 9 Mounting board 91 1st main surface 92 2nd main surface 93 Outer surface 104 1st switch 140 Common terminals 141 to 146 Selection terminal 105 2nd switch (switch)
150 Common terminal 151 to 153 Selection terminal 106 Third switch 160 Common terminal 161 to 169 Selection terminal 131 Output matching circuit 132 Output matching circuit 170 Resin layer (first resin layer)
171 Main surface 173 Outer peripheral surface 180 Shield layer 190

Second resin layer

200, 200a, 200b, 200c High frequency module 300 Communication device 301 Signal processing circuit 302 RF signal processing circuit 303 Baseband signal processing circuit 310 Antenna L1 to L9 Inverter L11 to L19 Inductor T0 External connection terminal T1 Antenna terminal T2 Signal input terminal T3 Signal input terminal T4 Signal output terminal T5 Ground terminal D1 Thickness direction

Claims

A mounting board having a first main surface and a second main surface facing each other,
The first electronic component mounted on the first main surface of the mounting board and
The second electronic component mounted on the mounting board and
A third electronic component mounted on the mounting board is provided.
The first electronic component is
A first transmission filter having a pass band including a transmission band of the first communication band,
A second transmission filter having a pass band including a transmission band of a second communication band different from the first communication band is included.
It has a common substrate for the first transmission filter and the second transmission filter, and has a common substrate.
The second electronic component is
A third transmission filter having a pass band including a transmission band of a third communication band different from the first communication band and the second communication band is included.
The third electronic component is
A first reception filter having a pass band including the reception band of the first communication band,
A second reception filter having a pass band including the reception band of the second communication band,
A third reception filter having a pass band including the reception band of the third communication band is included.
Having a substrate common to the first reception filter, the second reception filter, and the third reception filter.
High frequency module.
The first electronic component has a plurality of first external terminals, and is connected to the mounting board by the plurality of first external terminals to the first main surface.
The second electronic component has a plurality of second external terminals, and is connected to the mounting board by the plurality of second external terminals.
The third electronic component has a plurality of third external terminals and is connected to the mounting board by the plurality of third external terminals.
The high frequency module according to claim 1.
In a plan view from the thickness direction from the mounting board, the first transmission filter is smaller than the second transmission filter and the third transmission filter.
The high frequency module according to claim 1 or 2.
The combination of the first communication band and the second communication band is a combination capable of simultaneous communication.
The high frequency module according to any one of claims 1 to 3.
The first communication band is Band 1 of the 3GPP LTE standard or n1 of the 5G NR standard.
The second communication band is Band 3 of the 3GPP LTE standard or n3 of the 5G NR standard.
The third communication band includes at least 3GPP LTE standard Band66 or 5G NR standard n66 among 3GPP LTE standard Band66 or 5G NR standard n66 and 3GPP LTE standard Band70 or 5G NR standard n70. ,
The high frequency module according to any one of claims 1 to 4.
The third electronic component is
A fourth receive filter having a pass band including a receive band of the fourth communication band is further included.
The third communication band is Band66 of the 3GPP LTE standard or n66 of the 5G NR standard.
The fourth communication band includes at least 3GPP LTE standard Band25 or 5G NR standard n25 among 3GPP LTE standard Band25 or 5G NR standard n25 and 3GPP LTE standard Band70 or 5G NR standard n70.
The high frequency module according to claim 5.
The frequency difference between the transmission band of the third communication band and the reception band of the third communication band is
The frequency difference between the transmission band of the first communication band and the reception band of the first communication band is smaller than that of the transmission band of the second communication band and the reception band of the second communication band. Less than the frequency difference between
The high frequency module according to any one of claims 1 to 3.
The combination of the third communication band and the first communication band, and the combination of the third communication band and the second communication band are combinations in which neither simultaneous reception nor simultaneous transmission is allowed.
The high frequency module according to claim 7.
The first communication band is Band 1 of the 3GPP LTE standard or n1 of the 5G NR standard.
The second communication band is Band 66 of the 3GPP LTE standard or n70 of the 5G NR standard.
The third communication band is Band 3 of the 3GPP LTE standard or n3 of the 5G NR standard.
The high frequency module according to claim 7 or 8.
With the first power amplifier
With a second power amplifier,
The first power amplifier corresponds to the first power class and corresponds to the first power class.
The second power amplifier corresponds to the second power class and corresponds to the second power class.
The maximum output power of the first power class is larger than the maximum output power of the second power class.
The first transmission filter and the second transmission filter can be connected to the second power amplifier.
The third transmission filter is connected to the first power amplifier.
The high frequency module according to any one of claims 1 to 3.
The third communication band is Band 41 of the 3GPP LTE standard.
The high frequency module according to claim 10.
Each of the first transmission filter, the second transmission filter, and the third transmission filter is an elastic wave filter.
The high frequency module according to any one of claims 1 to 11.
Each of the first reception filter, the second reception filter, and the third reception filter is an elastic wave filter.
The high frequency module according to any one of claims 1 to 12.
The surface acoustic wave filter is a surface acoustic wave filter.
The high frequency module according to claim 12 or 13.
The elastic wave filter is a bulk elastic wave filter.
The high frequency module according to claim 12 or 13.
The second electronic component and the third electronic component are mounted on the first main surface of the mounting board.
The high frequency module is
A resin layer arranged on the first main surface of the mounting substrate and covering at least the outer peripheral surface of the first electronic component, the outer peripheral surface of the second electronic component, and the outer peripheral surface of the third electronic component. ,
A shield layer that covers the resin layer and overlaps at least a part of each of the first electronic component, the second electronic component, and the third electronic component in a plan view from the thickness direction of the mounting substrate. Further prepared,
The shield layer is
It is in contact with the main surface of the first electronic component on the side opposite to the mounting board side.
The high frequency module according to any one of claims 1 to 15.
Further comprising a plurality of external connection terminals arranged on the second main surface of the mounting board.
The high frequency module according to any one of claims 1 to 16.
Further comprising a fourth electronic component mounted on the second main surface of the mounting board.
The high frequency module according to claim 17.
The fourth electronic component is an IC chip including a switch to which the first transmission filter, the second transmission filter, and the third transmission filter are connected.
The fourth electronic component overlaps the first electronic component and the second electronic component in a plan view from the thickness direction of the mounting substrate.
The high frequency module according to claim 18.
The high frequency module according to any one of claims 1 to 19.
A signal processing circuit connected to the high frequency module.
Communication device.