WO2022209024A1 - Metal-ceramic bonded substrate and manufacturing method therefor - Google Patents

Metal-ceramic bonded substrate and manufacturing method therefor Download PDF

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Publication number
WO2022209024A1
WO2022209024A1 PCT/JP2021/045174 JP2021045174W WO2022209024A1 WO 2022209024 A1 WO2022209024 A1 WO 2022209024A1 JP 2021045174 W JP2021045174 W JP 2021045174W WO 2022209024 A1 WO2022209024 A1 WO 2022209024A1
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Prior art keywords
metal
ceramic
base plate
reinforcing member
substrate
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PCT/JP2021/045174
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French (fr)
Japanese (ja)
Inventor
正昭 肥後
悟 井手口
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Dowaメタルテック株式会社
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Publication of WO2022209024A1 publication Critical patent/WO2022209024A1/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22DCASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D19/00Casting in, on, or around objects which form part of the product
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/13Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks

Definitions

  • the present invention relates to a metal-ceramic bonding substrate and a manufacturing method thereof, and in particular, a ceramic substrate having a metal plate (metal circuit board) for mounting electronic components formed on one side and a metal base plate for heat dissipation on the other side. and a method of manufacturing the same.
  • a metal circuit board is bonded to one side of the ceramic substrate, and a metal base plate for heat dissipation is bonded to the other side.
  • a semiconductor chip is mounted on the In order to dissipate the heat from heat generating elements such as semiconductor chips to the outside, heat dissipating fins, cooling jackets, etc. are placed on the back side of the heat dissipating metal base plate through through holes formed in the peripheral edge of the metal base plate. It is attached by fastening with screws or bolts.
  • a metal-ceramic bonding substrate As such a metal-ceramic bonding substrate, a metal circuit board is directly bonded to one surface of a ceramic substrate, and a heat radiation member made of aluminum or an aluminum alloy is directly bonded to the other surface of the ceramic substrate.
  • a metal-ceramic bonding substrate has been proposed in which a radiator having a space formed therein is attached by screwing a cover to a heat dissipation member through a screw hole (through hole) formed therein (for example, patent Reference 1).
  • a heat dissipating member is directly bonded to the ceramic substrate by pouring molten aluminum or an aluminum alloy into a mold in which the ceramic substrate is placed and then solidifying the molten metal. Since the strength of the heat dissipating member is not high, the peripheral edge of the screw hole formed in the heat dissipating member may be depressed, or the screws may loosen when used as an insulating substrate for power modules in vehicles, industrial machines, etc. In addition, if the components of the additive metals in the aluminum alloy are adjusted to increase the strength of the heat dissipating member, the thermal conductivity of the heat dissipating member may decrease and the heat dissipation performance may deteriorate. is added, there is a risk that the reliability of the metal-ceramic bonded substrate will be reduced, such as cracking occurring in the ceramic substrate.
  • a pipe member is fitted into the through-hole connecting both main surfaces of the substrate made of a composite of graphite and metal. has been proposed, and in order to improve the adhesion and heat dissipation between the pipe member and the substrate, it has been proposed to join the interface between the pipe member and the substrate with a brazing material or the like (see, for example, Patent Document 2). .
  • a metal-ceramic bonded substrate in which a metal plate is bonded to one surface of a ceramic substrate and a metal base plate is bonded to the other surface is provided. Bonded to the ceramic substrate by directly bonding the outer peripheral surface of an annular member made of metal having higher strength than the metal base plate to the inner peripheral surface of the through hole (for screwing) formed so as to penetrate the surface. It has been proposed to improve the reliability of a metal-ceramic bonded substrate by suppressing deformation of the screwed portion of the metal base plate (see, for example, Patent Document 3).
  • an annular member made of a metal having a melting point and strength higher than those of a metal base plate and a ceramic substrate are arranged separately in a mold, and both surfaces of the ceramic substrate in the mold are in contact with each other.
  • molten metal so as to contact the outer peripheral surface of the annular member and then cooling and solidifying it, a metal plate is formed and directly bonded to one surface of the ceramic substrate, and a metal base plate is formed to form the ceramics. It can be manufactured by bonding directly to the other surface of the substrate, and directly bonding the outer peripheral surface of the annular member to the inner peripheral surface of the through hole penetrating from one surface to the other surface of the metal base plate.
  • the present invention provides a metal-ceramic bonded substrate that can suppress the occurrence of cracks in the ceramic substrate even when a thermal history is applied and can sufficiently suppress warping. It is an object of the present invention to provide a metal-ceramic bonded substrate and a manufacturing method thereof.
  • the metal-ceramic bonded substrate of the present invention is a metal-ceramic bonded substrate in which a metal plate is bonded to one surface of a ceramic substrate and a metal base plate is bonded to the other surface, and a metal base is attached to a side surface of the metal base plate.
  • the side surface of a plate-like reinforcing member made of metal having a higher strength than the plate is joined.
  • the reinforcing member preferably has a through hole, and the through hole preferably extends in a direction perpendicular to the main surface of the reinforcing member.
  • the metal base plate is preferably directly bonded to the ceramic substrate, and the metal plate is preferably directly bonded to the ceramic substrate.
  • the metal base plate is preferably made of aluminum or an aluminum alloy
  • the reinforcing member is preferably made of carbon steel or stainless steel
  • the reinforcing member is preferably made of a material having a tensile strength of 150 MPa or more.
  • the metal plate is preferably made of aluminum or an aluminum alloy, and preferably made of aluminum containing 99.7% by mass or more of aluminum.
  • the reinforcing member joins the ceramic substrate and the base plate when viewed in plan from a direction perpendicular to the main surface of the ceramic substrate. It is preferable that the joint layer is formed in a region other than the region, and that a joint layer made of an alloy is formed at the joint interface between the reinforcing member and the metal base plate.
  • the reinforcing member is preferably rectangular, and may have a shape surrounding the metal base plate.
  • the method for producing a metal-ceramic bonded substrate of the present invention is a method for producing a metal-ceramic bonded substrate in which a metal plate is bonded to one surface of a ceramic substrate and a metal base plate is bonded to the other surface of the ceramic substrate, wherein the metal base plate A plate-shaped reinforcing member made of a metal having a higher melting point and higher strength and a ceramic substrate are arranged in the mold with a gap therebetween, and the metal is placed in contact with both sides of the ceramic substrate in the mold and the side surfaces of the reinforcing member.
  • the metal plate After pouring the molten metal, the metal plate is formed and directly bonded to one surface of the ceramic substrate by cooling and solidifying, and the metal base plate is formed and directly bonded to the other surface of the ceramic substrate. 1) joining the side surface of the reinforcing member to the side surface of the metal base plate;
  • the reinforcing member preferably has a through hole, and the through hole preferably extends in a direction perpendicular to the main surface of the reinforcing member.
  • the molten metal for forming the metal base plate is made of aluminum or an aluminum alloy
  • the reinforcing member is preferably made of carbon steel or stainless steel, and the reinforcing member has a tensile strength of 150 MPa or more. is preferred.
  • the molten metal for forming the metal plate is preferably made of aluminum or an aluminum alloy, and the molten metal for forming the metal plate is preferably made of aluminum containing 99.7% by mass or more of aluminum.
  • the molten metal is poured so as to come into contact with the main surface of the reinforcing member and then cooled and solidified so that the main surface of the reinforcing member is coated with aluminum or an aluminum alloy. is preferably joined.
  • the reinforcing member is bonded to a region other than the bonding region between the ceramic substrate and the base plate when viewed from above in a direction perpendicular to the main surface of the ceramic substrate, and the bonding between the reinforcing member and the metal base plate. It is preferable to form a bonding layer made of an alloy on the bonding interface.
  • the reinforcing member is preferably rectangular, and may have a shape surrounding the metal base plate.
  • the present invention can provide a metal-ceramic bonded substrate that can suppress the occurrence of cracks in the ceramic substrate and sufficiently suppress warping even when a thermal history is applied, and a method for manufacturing the same.
  • FIG. 1 is a plan view (top view) showing an embodiment of a metal-ceramic bonding substrate according to the present invention
  • FIG. FIG. 1B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 1A taken along the line AA.
  • FIG. 1B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 1A taken along the line BB.
  • FIG. 1B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 1A taken along line CC.
  • 1B is a rear view of the metal-ceramic bonding substrate of FIG. 1A;
  • FIG. 2 is a plan view (top view) of a lower mold (mold), which is a mold component used for manufacturing the metal-ceramic bonded substrate shown in FIG. 1;
  • FIG. 2B is a cross-sectional view of the lower mold (mold) of FIG. 2A taken along the line AA.
  • FIG. 2B is a cross-sectional view along the line BB of the lower mold (mold) of FIG. 2A;
  • FIG. 2B is a cross-sectional view taken along the line CC of the lower mold (mold) of FIG. 2A;
  • 2B is a rear view of the lower mold (mold) of FIG. 2A;
  • FIG. FIG. 2B is a cross-sectional view taken along line DD of the lower mold (mold) of FIG.
  • FIG. 2A is a cross-sectional view taken along line EE of the lower mold (mold) of FIG. 2A;
  • FIG. 2B is a cross-sectional view taken along line FF of the lower mold (mold) of FIG. 2A;
  • Fig. 3 is a plan view (top view) of a middle mold that constitutes the lower mold (mold) of Fig. 2;
  • FIG. 3B is a cross-sectional view of the medium size of FIG. 3A taken along the line AA.
  • FIG. 3B is a cross-sectional view along the line BB of the medium size of FIG. 3A;
  • FIG. 3B is a cross-sectional view of the middle size of FIG. 3A taken along the line CC.
  • Figure 3B is a rear view of the medium of Figure 3A;
  • 3 is a plan view (top view) of an outer mold that constitutes the lower mold (mold) of FIG. 2.
  • FIG. FIG. 2 is a plan view (bottom view) of an upper mold (mold) that is a mold component used to manufacture the metal-ceramic bonded substrate shown in FIG. 1;
  • FIG. 2 is a plan view (top view) of an upper mold (mold) that is a mold component used for manufacturing the metal-ceramic bonded substrate shown in FIG. 1;
  • FIG. 6 is a cross-sectional view corresponding to line AA when the upper mold of FIG. 5 is placed on the lower mold of FIG. 2; 6 is a sectional view corresponding to line BB when the upper mold of FIG.
  • FIG. 6 is a cross-sectional view corresponding to the CC line when the upper mold of FIG. 5 is placed on the lower mold of FIG. 2;
  • FIG. 6 is a sectional view corresponding to line DD when the upper mold of FIG. 5 is placed on the lower mold of FIG. 2;
  • FIG. FIG. 6 is a cross-sectional view corresponding to line EE when the upper mold of FIG. 5 is placed on the lower mold of FIG. 2;
  • 6 is a sectional view corresponding to line FF when the upper mold of FIG. 5 is placed on the lower mold of FIG. 2;
  • FIG. FIG. 2 is a plan view showing a second embodiment of the metal-ceramic bonding substrate of the present invention;
  • FIG. 7B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 7A taken along the line AA.
  • FIG. 7B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 7A taken along the line BB.
  • FIG. 7B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 7A taken along line CC.
  • 7B is a rear view of the metal-ceramic bonding substrate of FIG. 7A.
  • FIG. FIG. 5 is a plan view showing a third embodiment of the metal-ceramic bonding substrate of the present invention;
  • FIG. 8B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 8A taken along the line AA.
  • FIG. 8B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 8A taken along the line BB.
  • FIG. 8B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 8A taken along the line CC.
  • 8B is a rear view of the metal-ceramic bonding substrate of FIG. 8A.
  • FIG. FIG. 5 is a plan view showing a fourth embodiment of the metal-ceramic bonding substrate of the present invention;
  • FIG. 9B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 9A taken along the line AA.
  • FIG. 9B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 9A taken along the line BB.
  • FIG. 9B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 9A taken along the line CC.
  • 9B is a rear view of the metal-ceramic bonding substrate
  • the metal-ceramic bonded substrate of the present invention is a metal-ceramic bonded substrate in which a metal plate is bonded to one surface of a ceramic substrate and a metal base plate is bonded to the other surface, and a metal base is attached to a side surface of the metal base plate.
  • the side surface of a plate-like reinforcing member made of metal having a higher strength than the plate is joined.
  • an embodiment of a metal-ceramic bonding substrate 1 includes an electrically insulating ceramic substrate 10 having a substantially rectangular planar shape and (a part of) a side surface of the ceramic substrate 10. ) and the other surface (rear surface (lower surface) in the illustrated embodiment), the metal base plate 12 having a substantially rectangular planar shape and one surface (the upper surface in the illustrated embodiment) of the ceramic substrate 10. and one or more (three in the illustrated embodiment) metal plates 14 for circuit patterns directly bonded to the metal base plate 12, and on the side surface (end portion) of the metal base plate 12, the planar shape is substantially rectangular and substantially uniform.
  • FIGS. 1A to 1E show a state in which the side surfaces of one reinforcement member 16 are joined to the right side surface and the left side surface (both end surfaces) of the metal base plate 12 .
  • the reinforcing member 16 preferably has a through hole 18 extending substantially perpendicularly to the main surface (plate surface) of the reinforcing member 16 .
  • FIG. 1A shows that two through-holes 18 are formed at the end of one reinforcement member 16 .
  • the through holes 18 of the reinforcing member 16 can be used as fastening holes for fastening to other members with screws or bolts.
  • a heat dissipating member such as a heat dissipating fin or a water cooling jacket, or a housing (not shown) surrounding the metal plate 14 for circuit patterns and the semiconductor mounted thereon may be screwed or bolted through the through holes 18.
  • a housing surrounding the metal plate 14 for circuit patterns and the semiconductor mounted thereon may be screwed or bolted through the through holes 18.
  • the reinforcing member 16 by bonding the reinforcing member 16 to the side surface of the metal base plate 12, warping is sufficiently suppressed even when thermal history is applied, and the portions to be fastened with screws or bolts are strengthened by the reinforcing member 16.
  • the deformation of the screwed portion (reinforcing member 16) is sufficiently small, and the loosening (tightening torque) of the screw (or bolt) can be sufficiently suppressed.
  • the back surface of the reinforcing member 16 (the surface opposite to the circuit pattern metal plate 14) and the back surface of the metal base plate 12 (the circuit pattern metal plate 14 is The surface on the opposite side) is approximately the same plane, and the metal base plate 12 joined to the reinforcing member 16 and integrated can be assembled in a state of being in good contact with the heat dissipating member without gaps.
  • the reinforcing member 16 is stronger than the metal base plate 12, and is preferably made of a material having a tensile strength of, for example, 150 MPa or more, further 200 MPa or more, and is preferably made of carbon steel or stainless steel.
  • the metal base plate 12 is preferably directly bonded to the ceramics substrate 10 , and the circuit pattern metal plate 14 is preferably bonded to the ceramics substrate 10 .
  • the metal base plate 12 is preferably made of aluminum or an aluminum alloy, and the metal plate 14 for the circuit pattern is preferably made of aluminum or an aluminum alloy.
  • the metal base plate 12 is preferably made of a material having a tensile strength of, for example, about 70 to 130 MPa (and further 75 to 120 MPa), and is preferably made of aluminum or an aluminum alloy.
  • Chip parts such as semiconductor elements are mounted on the metal plate 14 for the circuit pattern, so a metal with excellent electrical conductivity and thermal conductivity is preferable.
  • Aluminum or an aluminum alloy containing 99.9% by mass or more of aluminum is preferred.
  • the metal base plate 12 has a certain degree of hardness as a structural member as well as thermal conductivity.
  • the ceramic substrate 10 has a function of maintaining insulation between the metal plates 14 when there are a plurality of metal plates 14 for circuit patterns and between the metal plates 14 for circuit patterns and the metal base plate 12 .
  • the main component of ceramic substrate 10 (having a composition of 85% by mass or more) is preferably one or more selected from alumina, aluminum nitride, silicon nitride and silicon carbide.
  • the reinforcing member 16 is formed in a region other than the bonding region between the ceramic substrate 10 and the metal base plate 12 when viewed from above in a direction perpendicular to the main surface of the ceramic substrate 10. is preferred. It is preferable not to form the reinforcing member 16 in the bonding area between the ceramic substrate 10 and the metal base plate 12 in order to ensure heat dissipation.
  • the bonding interface between the reinforcing member 16 and the metal base plate 12 made of aluminum or an aluminum alloy has, for example, an alloy layer of Fe and Al with a thickness of several 100 ⁇ m or less ( A bonding layer (not shown) is preferably formed, and the reinforcing member 16 and the metal base plate 12 are firmly bonded.
  • the metal base plate 12 may have an alloy structure in which Fe diffuses from the alloy layer to the metal base plate 12 side and an intermetallic compound of Fe and Al is formed (dispersed) in the Al matrix. The strength of the metal base plate 12 is improved by the diffusion of Fe into Al and the formation of an intermetallic compound.
  • the method for producing a metal-ceramic bonded substrate of the present invention is a method for producing a metal-ceramic bonded substrate in which a metal plate is bonded to one surface of a ceramic substrate and a metal base plate is bonded to the other surface of the ceramic substrate, wherein the metal base plate A plate-shaped reinforcing member made of a metal having a higher melting point and higher strength and a ceramic substrate are arranged in the mold with a gap therebetween, and the metal is placed in contact with both sides of the ceramic substrate in the mold and the side surfaces of the reinforcing member.
  • the metal plate After pouring the molten metal, the metal plate is formed and directly bonded to one surface of the ceramic substrate by cooling and solidifying, and the metal base plate is formed and directly bonded to the other surface of the ceramic substrate. 1) joining the side surface of the reinforcing member to the side surface of the metal base plate;
  • a metal-ceramic bonded substrate is obtained by bonding a ceramic substrate, a metal base plate, a metal plate for circuit patterns, and a reinforcing member by a molten metal bonding method.
  • the lower mold (mold) illustrated here has a structure in which a middle mold (mold) and an outer mold (mold) are fitted together.
  • 2A is a plan view (top view) of the middle mold 20 and the outer mold 40 that constitute the lower mold 100
  • FIG. 2D is a cross-sectional view along the CC line of FIG. 2A
  • FIG. 2E is a rear view of FIG. 2A
  • FIG. 2F is a cross-sectional view along the DD line of FIG. 2A
  • a cross-sectional view, FIG. 2H, is a cross-sectional view taken along line FF of FIG. 2A.
  • the state in which the ceramic substrate 10 is arranged is indicated by a dotted line for the sake of convenience.
  • a portion indicated by a dotted line where the ceramic substrate 10 is arranged is a ceramic substrate accommodating portion in the mold.
  • a ceramic substrate supporting portion 21 which is a convex portion that abuts against the ceramic substrate 10 for insulation during casting
  • a metal plate forming portion 22 for circuit which is a concave portion corresponding to the metal plate 14 for circuit pattern.
  • a metal base plate forming portion 23 that is a recess (located on the lower surface of the ceramic substrate accommodation portion) corresponding to the metal base plate 12 and a reinforcing member accommodation portion 24 that is a recess for accommodating the reinforcing member 16 are formed,
  • a convex portion 25 corresponding to the through hole 18 of the reinforcing member 16 is formed in the reinforcing member accommodating portion 24 .
  • the reinforcing member accommodating portion 24 is adjacent to the metal base plate forming portion 23 and formed integrally with the metal base plate forming portion 23 .
  • a portion of the middle mold 20 where the reinforcing member 16 is arranged is referred to as a "reinforcing member accommodating portion 24" for convenience.
  • metal base plate forming portion 23 the portion where the molten metal is injected to form the metal base plate 12 is referred to as "metal base plate forming portion 23".
  • the ceramic substrate supporting portion 21 is formed so as to surround the periphery (side surface) of the ceramic substrate 10, and the outer peripheral portion of the ceramic substrate supporting portion 21 abuts on the peripheral portion of one surface (the surface on the circuit pattern side) of the ceramic substrate 10.
  • a step having a substantially L-shaped cross section is provided to support the ceramic substrate 10 at a predetermined position in contact therewith, forming a ceramic substrate accommodating portion which is a space for accommodating the ceramic substrate.
  • the ceramic substrate supporting portion 21 has an L-shaped cross section, so that when the molten aluminum or aluminum alloy is poured into the mold after the ceramic substrate 10 is placed in the ceramic substrate accommodating portion, the ceramic substrate 10 is This is preferable because it can prevent deviation from the predetermined position.
  • the tip (upper end) of the ceramic substrate support portion 21, which has an L-shaped cross section must be at the same height or lower than the upper surface (the surface on the side of the metal base plate) of the ceramic substrate 10. is desirable. However, if it is too low, that is, if it is the same height as or lower than one surface of the ceramics substrate (the surface on the circuit pattern side), there is a high possibility that the ceramics substrate 10 will be misaligned. Therefore, when the ceramics substrate 10 is placed on the ceramics substrate supporter 21, the tip of the ceramics substrate supporter 21 has a thickness corresponding to the thickness of the ceramics substrate 10 from one surface of the ceramics substrate 10 (the surface on the circuit pattern side, the lower surface).
  • the height is approximately half or more to the same height as the thickness of the ceramic substrate 10 . If the tip of the ceramic substrate supporting portion 21 is at the same level as or higher than the upper surface of the ceramic substrate 10, the metal base plate 12 is not joined to the side surface of the ceramic substrate 10 (however, in practice, the ceramic substrate 10 A metal base plate may be joined to the side surface of the ceramic substrate 10 in order to provide a slight clearance (gap) between the side surface of the ceramic substrate 10 and the ceramic substrate supporting portion 21 for easy placement.). At least one (three in the illustrated embodiment) for forming a metal plate 14 for a circuit pattern is provided approximately in the center of the upper surface of the ceramic substrate supporting portion 21 (the surface with which one surface of the ceramic substrate abuts).
  • metal plate forming portion 22 (metal plate forming portion) 22 are formed.
  • the metal plate forming portion 22 is separated from the metal base plate forming portion 23 via the ceramic substrate supporting portion 21, and provides insulation between the metal base plate 12 and the metal plate 14 when the ceramic substrate 10 is arranged. It is designed to be secured.
  • a runner 26 for molten metal which is a concave portion, is formed on the surface adjacent to the metal base plate forming portion 23 of the middle mold 20, a runner 26 for molten metal, which is a concave portion, is formed. Holes 27 (four through-holes are shown in FIG. 2A) for pouring molten metal are formed.
  • FIG. 3A schematically illustrates a plan view (top view) of the middle die 20 that constitutes the lower die of FIG. 4 schematically illustrates a plan view (top view) of the outer mold 40 constituting the lower mold 100 of FIG. 2 as viewed from above.
  • the outer mold 40 has a convex portion 41 that fits into the space of the molten metal storage portion of an upper mold 200 (FIG. 5), which is a mold component to be combined during casting.
  • Molten metal is poured.
  • a molten metal inlet 43 and a grooved runner 44 for supplying molten metal to the circuit metal plate forming portion 22 are formed on the surface (convex portion 41 ) of the outer mold 40 .
  • the pouring hole 27 of the metal plate forming part 22 for the circuit of the middle mold 20 straightly penetrates the plate thickness of the middle mold 20, and the through hole is the tip of the groove of the branched runner 44 of the outer mold. connected nearby.
  • the upper side is the high temperature side of the temperature gradient
  • the lower side is the low temperature side of the temperature gradient.
  • the runner 26 for supplying the molten metal to the metal base plate forming portion 23 is a separate path from the runner 44 for supplying the molten metal to the metal plate forming portion 22 for the circuit. Molten metal is supplied to the runner 26 from the .
  • FIG. 5A and 5B show the structure (plan view) of an upper mold 200 used in combination with the lower mold, which is a mold component for producing a cast product of the metal-ceramic bonding substrate 1 shown in FIG. Schematically exemplified.
  • FIG. 5A is a bottom view (the side covered with the lower mold)
  • FIG. 5B is a top view (the side that faces up when the lower mold is covered).
  • the upper mold 200 has a molten metal reservoir 201 that receives the molten metal supplied to the mold.
  • the molten metal reservoir 201 is formed by a space penetrating the body of the upper mold 200, and during casting, the molten metal is introduced from the upper opening of the upper mold 200 (of the molten metal reservoir 201) through a supply port 204.
  • a metal base plate forming portion 202 which is a recess corresponding to the metal base plate 12
  • a reinforcing member accommodating portion 203 which is a recess for accommodating the reinforcing member 16, are formed.
  • the reinforcing member accommodating portion 203 is adjacent to the metal base plate forming portion 202 and formed integrally with the metal base plate forming portion 202 .
  • a portion of the upper die 200 where the reinforcing member 16 is arranged is referred to as a "reinforcing member accommodating portion 203" for convenience.
  • the portion where the molten metal is injected to form the metal base plate 12 is referred to as "metal base plate forming portion 202".
  • each of the mold components is preferably a carbon material having gas permeability, for example.
  • FIG. 6A to 6F schematically illustrate cross-sectional structures of molds constructed by combining the lower mold 100 shown in FIG. 2 and the upper mold 200 shown in FIG. 6A corresponds to the cross section indicated by the AA line in FIG. 2A
  • FIG. 6B corresponds to the cross section indicated by the BB line in FIG. 2A
  • FIG. 6C is the CC line in FIG. 2A.
  • FIG. 6D corresponds to the cross section at the position indicated by the DD line in FIG. 2A
  • FIG. 6E corresponds to the cross section at the position indicated by the EE line in FIG.
  • FIG. 6F corresponds to a cross section at the position indicated by the FF line in FIG. 2A.
  • the middle mold 20 is housed in the middle mold housing portion 45 of the outer mold 40 of the lower mold 100, which is a mold component (the states shown in FIGS. 2A to 2H).
  • the ceramic substrate 10 is placed on the ceramic substrate supporting portion 21 of the medium mold 20 .
  • a metal plate forming portion 22 which is a space between one surface of the ceramic substrate 10 and the surface of the medium mold 20, is defined.
  • the ceramic substrate supporting portion 21 also plays a role of positioning and preventing displacement so that the ceramic substrate 10 is not displaced from a predetermined position by the molten metal when the molten metal is poured later.
  • a reinforcing member 16 is arranged in the reinforcing member accommodating portion 24 of the middle mold 20 .
  • the reinforcing member 16 is plate-shaped, and through holes 18 for screwing are formed in advance, and the projections 25 of the middle die 20 are positioned corresponding to the through holes 18 of the reinforcing member 16 and have an appropriate size for fitting.
  • the reinforcing member 16 can be arranged at a predetermined position in the reinforcing member accommodating portion 24 .
  • the ceramic substrate 10 and the reinforcing member 16 are positioned apart from each other.
  • 2B to 2D and 2F to 2H which are cross-sectional views of the lower mold 100, show the state in which the ceramic substrate 10 is arranged for the sake of convenience.
  • reinforcing member accommodating portion 203 and reinforcing member accommodating portion 24 are defined.
  • the reinforcing member accommodating portion 203 and the reinforcing member accommodating portion 24 form an integrated space.
  • the metal base plate forming portion 202 and the metal base plate forming portion 23 form an integrated space.
  • the mold is inserted into a heating furnace (not shown) and heated in a non-oxidizing gas atmosphere such as nitrogen gas, and the molten metal material melted in the melting furnace (not shown) is supplied from the molten metal supply port 204. It is introduced into the reservoir 201 . At that time, it is desirable that the molten metal to be poured is in a state in which the oxide film on the surface of the molten metal has been removed.
  • a non-oxidizing gas atmosphere such as nitrogen gas
  • the molten metal supplied from the melting furnace it is preferable to pour the molten metal supplied from the melting furnace while removing the oxide film.
  • the oxide film removal treatment in the case of an aluminum-based molten metal, it is effective to pour the molten metal while removing the oxide film on the surface of the molten metal by passing the molten metal through, for example, a very small nozzle.
  • the molten metal accumulated in the molten metal reservoir 201 in the mold is sent from the molten metal inlet 42 formed by combining the upper mold 200 and the lower mold 100 to the runner 26, and from the molten metal inlet 43 to the runner 44.
  • the metal base plate forming portion 202, the metal base plate forming portion 23, and the metal plate forming portion 22 in the space within the mold are each filled with the molten metal.
  • a portion of the molten metal material introduced into the molten metal storage portion 201 from the molten metal inlet 204 is fed from the molten metal inlet 42 to the runner 26 and filled in the metal base plate forming portion 202 and the metal base plate forming portion 23 . be.
  • the remaining part of the molten metal material introduced into the molten metal reservoir 201 from the molten metal supply port 204 is fed from the molten metal inlet 43 to the runner 44 and passes through the pouring hole 27 to form each metal plate. Part 22 is filled.
  • the low temperature of the mold is reduced by a method such as contacting a water-cooled copper block as a cooling device to the mold outer wall at the low temperature side end (for example, the lower end in FIGS. 6D to 6F). It is desirable to directionally solidify the molten metal by forcibly extracting heat from the side.
  • the metal base plate forming portion 202 and the metal base plate are passed through the runner 26 while being pressurized with an inert gas such as nitrogen gas from the hot water supply port 204 at a pressure of, for example, 5 to 200 kPa. It is desirable to feed the molten metal from the pouring hole 27 to the metal plate forming portion 22 via the forming portion 23 and the runner 44, and solidify while applying pressure.
  • the molten metal is poured into the mold so as to be in contact with both sides of the ceramic substrate 10 and the side surface of the reinforcing member 16, and then cooled and solidified, whereby the side surface and the other side of the ceramic substrate 10 are solidified.
  • a metal base plate 12 having a substantially rectangular planar shape that is bonded to the entire surface (back surface) is directly bonded, and at least one (three in the illustrated embodiment) that is directly bonded to one surface of the ceramic substrate 10.
  • the circuit pattern metal plate 14 is directly joined, and the side surface (inner side surface) of the reinforcing member 16 is joined to the side surface of the metal base plate 12 .
  • the metal base plate 12 is made of aluminum or an aluminum alloy, that is, it is preferable to pour a molten metal made of aluminum or an aluminum alloy into the mold.
  • the metal plate 14 is made of aluminum or an aluminum alloy, that is, it is preferable to pour a molten metal made of aluminum or an aluminum alloy into the mold.
  • a metal having excellent electrical conductivity and thermal conductivity is preferable. It is preferable to pour molten metal of aluminum or aluminum alloy containing more than mass % of aluminum.
  • the metal base plate 12 has thermal conductivity and a certain degree of hardness (strength) as a constituent member, it is preferable that the metal plate 14 has a higher hardness than the circuit metal plate 14 . That is, by changing the compositions of the molten metal used for the metal base plate 12 and the molten metal used for the metal plate 14, the hardness of the metal base plate 12 is greater than the hardness of the metal plate 14. You may pour hot water from the runner provided separately. When metal base plate 12 and metal plate 14 have different aluminum or aluminum alloy compositions, metal supply port 204 and molten metal reservoir 201 may be separately provided (not shown) for pouring.
  • a bonding layer made of, for example, an alloy of Fe and Al is formed at the bonding interface between the reinforcing member 16 made of carbon steel or stainless steel and the metal base plate 12 so that the bonding between the reinforcing member 16 and the metal base plate 12 becomes strong.
  • a bonding layer made of, for example, an alloy of Fe and Al is formed at the bonding interface between the reinforcing member 16 made of carbon steel or stainless steel and the metal base plate 12 so that the bonding between the reinforcing member 16 and the metal base plate 12 becomes strong.
  • a bonding layer made of, for example, an alloy of Fe and Al is formed at the bonding interface between the reinforcing member 16 made of carbon steel or stainless steel and the metal base plate 12 so that the bonding between the reinforcing member 16 and the metal base plate 12 becomes strong.
  • runners 26 for feeding the molten metal to the metal base plate 12 and runners for feeding the molten metal to the metal plate 14 for the circuit pattern are provided. 44 is preferably provided separately.
  • the metal-ceramic bonded body obtained as described above is taken out by removing the upper mold 200 and dismantling the mold.
  • the solidified portion of the runner 26 connected to the metal base plate 12 is cut and removed, and the protrusions on the surface of the metal plate 14 remaining in the pouring hole 27 are polished.
  • the metal-ceramic bonding substrate 1 having a predetermined shape can be obtained by, for example, forming the substrates.
  • FIG. 7A to 7E show schematic diagrams of a metal-ceramic bonding substrate 2 of another embodiment.
  • projections are provided on the surface of the reinforcing member accommodating portion 24 of the mold.
  • a gap is left between the mold 200 and the reinforcing member 16, and when the molten metal is poured, the molten metal also contacts the main surface (plate surface) and the side surface (outer surface) of the reinforcing member 16 other than the joint surface.
  • aluminum or aluminum alloy 30 may be bonded to the main and side surfaces of reinforcing member 16 .
  • the surface (inner surface) of the through-hole 18 can also be made of aluminum or an aluminum alloy. may be formed.
  • the reinforcing member 16 is made of carbon steel and the metal base plate 12 is made of aluminum or an aluminum alloy, the reinforcing member 16 will corrode (galvanic corrosion) when the metal-ceramic substrate is incorporated in a semiconductor device such as a power module. Since there is a possibility, the entire surface of the reinforcing member 16 (the main surface, the side surface to which the metal base plate 12 is not bonded, and the inner surface of the through hole 18) is covered with aluminum or aluminum alloy 30, that is, the surface of the reinforcing member 16 is covered with aluminum or aluminum alloy 30. Preferably, aluminum or aluminum alloy 30 is bonded (formed).
  • a metal-ceramic bonding substrate 3 in which the metal base plate 12 is not bonded to the side surface of the ceramic substrate 10 but is directly bonded to the entire other surface of the ceramic substrate 10 can be used. good. It can be manufactured by changing the shape of the mold so that the shape of the metal base plate 12 of the metal-ceramic bonding substrate of FIG. 8 is formed.
  • a metal-ceramic bonding substrate 4 may be used in which a reinforcing member 16 is bonded so as to surround a metal base plate 12.
  • FIG. 9 By changing the shape of the reinforcing member 16 and changing the shape of the reinforcing member accommodating portion 203 and the reinforcing member accommodating portion 24 so that the reinforcing member 16 of the metal-ceramic bonding substrate shown in FIG. 9 can be accommodated in the mold, can be manufactured.
  • heat radiation pins or fins may be formed integrally with the aluminum base plate on the rear surface of the aluminum base plate (the surface to which the ceramic substrate is not bonded).
  • the pins and fins for heat radiation integrally formed with the aluminum base plate are prepared by preparing a mold having a space substantially the same as the shape of the pins and fins inside, and then pouring an aluminum alloy into the mold. can be made.
  • Example 1 A substantially rectangular aluminum nitride substrate (AlN substrate) having a length of 70 mm, a width of 65 mm, and a thickness of 0.6 mm was prepared as the ceramic substrate 10, and a substantially rectangular substrate having a length of 10 mm, a width of 80 mm, and a thickness of 2 mm was prepared as the reinforcing member 16.
  • a rectangular SPCC (ordinary steel) plate material (having a tensile strength of 270 MPa or more as a material) was prepared.
  • the reinforcing member 16 has a through hole 18 having a diameter of 6 mm and vertically penetrating the plate surface at a position 8 mm from both ends in the width direction and 5 mm in the length direction. For convenience, in FIG.
  • the horizontal direction is represented as the length direction, and the vertical direction as the width direction.
  • the ceramic substrate 10 is placed on the ceramic substrate supporting portion 21 of the middle mold 20 of the lower mold (mold) 100 similar to the mold component shown in FIG.
  • the through hole 18 of the reinforcing member 16 was fitted, and the reinforcing member 16 was accommodated in the reinforcing member accommodating portion 24 .
  • the upper mold 200 was placed over the lower mold 100 as shown in FIG.
  • the inside of the mold is heated in a nitrogen atmosphere, and molten pure aluminum (containing 99.9% by mass or more of Al) is poured into the mold while removing the oxide film on the surface, and then the mold is cooled.
  • a metal base plate 12 (having an outer shape of 80 mm in length and 80 mm in width) is integrally formed on the other surface of the ceramics substrate 10, and 3 is formed on one surface of the ceramics substrate 10.
  • a metal plate 14 made of aluminum for a circuit pattern was formed, and a metal-ceramic bonded body was produced in which reinforcing members 16 were directly bonded to both side surfaces of a metal base plate 12 .
  • the thickness of the metal base plate bonded to the other surface of the ceramic substrate 10 was set to 0.47 mm, and the area of the outer peripheral portion of the ceramic substrate 10 with a width of 0.2 mm (the recess on the drawing, the ceramic substrate of the mold at the time of casting)
  • the thickness of the metal base plate in the portion that was the tip of the support portion was set to 0.77 mm, and the thickness of the metal base plate in other regions (the portion joined to the reinforcing member, etc.) was set to 2 mm.
  • the thickness of the metal plate for the circuit pattern bonded to one surface of the ceramic substrate was set to 0.93 mm.
  • the tensile strength of the metal base plate is about 80 MPa, the thermal conductivity is 237 W/mK, and the electrical conductivity of the metal plate is 62% IACS.
  • a cut metal base plate is used as a test piece for measurement. Next, after taking out the metal-ceramic bonded body from the mold, the aluminum portion formed corresponding to the runner 26 is cut, and the surface of the circuit pattern metal plate 14 is polished to obtain the metal-ceramic bonded substrate 1. was made.
  • Example 2 The thickness of the reinforcing member 16 is set to 3 mm, the thickness of the metal base plate 12 bonded to the other surface of the ceramic substrate 10 is set to 0.8 mm, and the outer peripheral portion of the ceramic substrate 10 has a width of 0.2 mm ( The thickness of the metal base plate in the concave portion) was set to 1.1 mm, and the thickness of the metal base plate in other regions (the portion joined to the reinforcing member, etc.) was set to 3 mm.
  • a metal-ceramic bonded substrate was produced in the same manner as in Example 1, except that the thickness of the circuit pattern metal plate 14 bonded to one surface of the ceramic substrate was 1.6 mm.
  • Example 3 The thickness of the reinforcing member 16 is set to 4 mm, the thickness of the metal base plate 12 bonded to the other surface of the ceramic substrate 10 is set to 1.1 mm, and the outer peripheral portion of the ceramic substrate 10 has a width of 0.2 mm ( The thickness of the metal base plate in the concave portion) was set to 1.45 mm, and the thickness of the metal base plate in other regions (the portion joined to the reinforcing member, etc.) was set to 4 mm.
  • a metal-ceramic bonded substrate was produced in the same manner as in Example 1, except that the thickness of the circuit pattern metal plate 14 bonded to one surface of the ceramic substrate was 2.3 mm.
  • Example 4 A metal-ceramic bonding substrate was produced in the same manner as in Example 2, except that the reinforcing member 16 was made of S45C (carbon steel for machine structural use, which has a tensile strength of 570 MPa or more).
  • Example 5 A metal-ceramic bonding substrate was produced in the same manner as in Example 2, except that the reinforcing member 16 was made of SS400 (general structural rolled steel having a tensile strength of 400 MPa or more).
  • SS400 general structural rolled steel having a tensile strength of 400 MPa or more.
  • Example 6 A metal-ceramic bonding substrate was produced in the same manner as in Example 2, except that the reinforcing member 16 was made of SUS303 (stainless steel) (having a tensile strength of 520 MPa or more).
  • Example 7 A metal-ceramic bonding substrate was produced in the same manner as in Example 2, except that the reinforcing member 16 was made of SUS304 (stainless steel) (having a tensile strength of 520 MPa or more).
  • Example 8 A metal-ceramic bonding substrate was produced in the same manner as in Example 2, except that the reinforcing member 16 was made of SUS316 (stainless steel) (having a tensile strength of 520 MPa or more).
  • Example 9 A metal-ceramic bonding substrate having a shape as shown in FIG. .
  • Example 10 A substantially rectangular reinforcing member 16 having a length of 10 mm, a width of 80 mm, and a thickness of 2.4 mm was prepared, and three protrusions each having a diameter of 1 mm and a height of 0.3 mm were provided in the reinforcing member accommodating portion 24, and one side of the reinforcing member 16 was The main surface (plate surface) of the middle mold 20 is separated from the surface (bottom surface) and the side surface by 0.3 mm, and the gap between the other main surface (plate surface) of the reinforcing member 16 and the outer mold 40 is 0.3 mm Aluminum having a thickness of 0.3 mm was formed (joined) on one main surface, the other main surface and the side surface of the reinforcing member 16 corresponding to FIG. A metal-ceramic bonded substrate was fabricated.
  • Example 11 A substantially rectangular reinforcing member 16 having a length of 10 mm, a width of 80 mm, and a thickness of 2.6 mm was prepared, and three protrusions each having a diameter of 1 mm and a height of 0.2 mm were provided in the reinforcing member accommodating portion 24, and one side of the reinforcing member 16 was The main surface (plate surface) of the middle mold 20 is separated from the surface (bottom surface) and the side surface by 0.2 mm, and the gap between the other main surface (plate surface) of the reinforcing member 16 and the outer mold 40 is 0.2 mm Aluminum having a thickness of 0.2 mm was formed (joined) on one main surface, the other main surface and the side surface of the reinforcing member 16 corresponding to FIG. A metal-ceramic bonded substrate was fabricated.
  • Example 12 A substantially rectangular reinforcing member 16 having a length of 10 mm, a width of 80 mm, and a thickness of 2.0 mm was prepared, and three protrusions each having a diameter of 1 mm and a height of 0.5 mm were provided in the reinforcing member accommodating portion 24, and one side of the reinforcing member 16 was The main surface (plate surface) of the middle mold 20 is supported with a distance of 0.5 mm from the surface (bottom surface) and the side surface of the middle mold 20, and the gap between the other main surface (plate surface) of the reinforcing member 16 and the outer mold 40 is 0.5 mm Aluminum having a thickness of 0.5 mm was formed (joined) on one main surface, the other main surface and the side surface of the reinforcing member 16 corresponding to FIG. A metal-ceramic bonded substrate was fabricated.
  • the reinforcing member 16 has a thickness of 2.4 mm and has a (mouth-like) shape surrounding the outer circumference of the metal base plate 12 with a width of 10 mm. and supports one main surface (plate surface) of the reinforcing member 16 with a distance of 0.3 mm from the surface (bottom surface) and the side surface of the middle mold 20, and the other main surface (plate surface) of the reinforcing member 16 and the outer mold 40 Aluminum with a thickness of 0.3 mm is formed on one main surface, the other main surface and the side surface of the reinforcing member 16 corresponding to FIG. A (bonded) (covered) metal-ceramic bonded substrate was produced.
  • Example 1 A metal-ceramic bonding substrate was produced in the same manner as in Example 2, except that the reinforcing member 16 was not placed in the mold, and pure aluminum molten metal was poured into the reinforcing member accommodating portion 24 and allowed to solidify.
  • Comparative example 2 A metal-ceramic bonding substrate was produced in the same manner as in Comparative Example 2, except that molten aluminum-magnesium alloy A5052 was poured and solidified.
  • the formed metal-base plate has a tensile strength of about 200 MPa, a thermal conductivity of 137 W/(m/K), and an electrical conductivity of 35% IACS.
  • Comparative Example 3 In Comparative Example 3, many voids were observed at the joint interface between the pipe-shaped member and the metal base plate, and it was determined that the joint was defective.
  • a bonding layer (alloy layer) composed of Fe and Al was confirmed.
  • the thickness of the bonding layer in Examples 2 and 9 to 13 was about 150 ⁇ m
  • the thickness of the bonding layer in Example 4 was about 50 ⁇ m
  • the thickness of the bonding layer in Example 5 was about 100 ⁇ m.
  • Examples 10 to 13 aluminum is formed (bonded) on the main surface (plate surface) and side surfaces of the reinforcing member, but a bonding layer is formed between the aluminum on the main surface and side surfaces and the reinforcing member, and the fastening is performed. It was confirmed that the strength (hardness) of aluminum on the surface of the part was improved.
  • warp Located diagonally between the height of the metal plate for the circuit pattern in the center of the metal-ceramic bonding substrate and the outer peripheral edge of the metal-ceramic bonding substrate when viewed from the direction perpendicular to the main surface of the ceramic substrate. Measure the height of the metal base plate (designed to be the same height as the metal plate for the circuit pattern) at two corners (two points), and measure the reference line passing through the two points and the center The warpage of the product was defined as the difference in the height of the metal plate for the circuit pattern.
  • the warp is positive when the height of the central portion is low, and the (initial) warp is preferably in the range of -0.3 to 0.3 mm.
  • the warpage of Examples 1 to 13 and Comparative Examples 1 and 3 was in the range of ⁇ 0.1 to 0.1 mm, which was good. Comparative Example 2 was about +0.5 mm. Further, the warpage after heating the metal-ceramic bonded substrate to 300° C. was calculated by simulation using the finite element method. Those with a warp change of 0.15 mm or less after heating with respect to the initial warp are regarded as excellent products ( ⁇ ), those exceeding 0.15 mm and 0.20 mm or less are regarded as good products ( ⁇ ), and 0.20 mm is regarded as a good product. Those exceeding 0.25 mm or less were regarded as defective products ( ⁇ ), and those exceeding 0.25 mm were regarded as defective products (x). As a result, Examples 1 to 8, 10 to 12 and Comparative Example 2 were good products, Examples 9 and 13 were good products, and Comparative Examples 1 and 3 were bad products.
  • the frame-shaped member corresponding to a case member (housing) for enclosing a semiconductor or the like, which has a bolt fastening portion with a through hole formed therein was prepared.
  • a frame-shaped member corresponding to the water cooling jacket was provided on the back surface of the metal base plate.
  • a frame-shaped member corresponding to the case member was arranged on the surface of the metal base plate, and bolts were fastened through the through-holes of these frame-shaped members and the through-holes of the metal base plate.
  • a heat cycle (one cycle is -40°C x 30 minutes ⁇ 25°C x 10 minutes ⁇ 150°C x 30 minutes ⁇ 25°C x 10 minutes)
  • a heat cycle test was conducted by adding 500 cycles of
  • the bolt tightening torque was measured (actual measurement) before (initial) and after the heat cycle test.
  • a reduction in tightening torque after the heat cycle of 20% or less compared to before the heat cycle was evaluated as good.
  • the presence or absence of cracks in the ceramic substrate of the metal-ceramic bonding substrate after 500 cycles was confirmed.
  • thermo conductivity The heat dissipation of the metal base plate was evaluated by thermal conductivity, and the conductivity of the metal plate for the circuit pattern was evaluated by conductivity. A thermal conductivity of 180 W/mK or higher and an electrical conductivity of 50% IACS or higher were considered good. Examples 1 to 13 and Comparative Examples 1 and 3 were good in both thermal conductivity and electrical conductivity. Comparative Example 2 has a thermal conductivity of 137 W/mK, which is low for a metal base plate (for heat dissipation) and poor in heat dissipation, and has a conductivity of 35%IACS, which is too low to be used as a metal plate for circuit patterns. was not suitable for
  • Vickers hardness Vickers hardness was measured based on JIS-Z2244 for the surface of the circuit pattern metal plate and the surface of the metal base plate in the vicinity of the reinforcing member. Except for Comparative Example 2, the Vickers hardness HV of the surface of the metal plate for circuit pattern was in the range of 20-23. Also, except for Comparative Examples 1 and 2, the Vickers hardness HV of the surface of the metal base plate was in the range of 28-35. The Vickers hardness HV of the metal base plate of Comparative Example 1 is in the range of 20 to 23, and the Vickers hardness HV of the surface of the circuit pattern metal plate and the surface of the metal base plate in Comparative Example 2 is in the range of 45 to 48. Met.
  • Corrosion resistance was judged to be poor when corrosion of the reinforcing member or metal base plate (aluminum or aluminum alloy) was confirmed after the corrosion test in salt water. In some cases, even if the corrosion resistance is poor, if the design is such that it is covered with resin or the like when incorporated into a semiconductor device, the corrosion can be dealt with and no problem arises, but it is desirable that the corrosion resistance is excellent. According to the above test, Examples 10 to 13 and Comparative Examples 1 and 2 were excellent in corrosion resistance with no corrosion observed. Rust and galvanic corrosion were observed in Examples 1 to 5 and 9, and galvanic corrosion was observed in Examples 6 to 8 and Comparative Example 3.
  • Table 1 shows an overview of the evaluation results.
  • the present invention can be applied to metal-ceramic bonding substrates.

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Abstract

This metal-ceramic bonded substrate, in which a metal plate is bonded to one surface of a ceramic substrate and a metal base plate is bonded to the other surface thereof, is characterized in that a side surface of a plate-shaped reinforcing member comprising a metal having a higher strength than that of the metal base plate is bonded to a side surface of the metal base plate. Thus, it is possible to provide a metal-ceramic bonded substrate and a manufacturing method therefor with which cracking of the ceramic substrate can be suppressed and warpage can be adequately suppressed even when a thermal history is applied.

Description

金属-セラミックス接合基板およびその製造方法METAL-CERAMIC BONDING SUBSTRATE AND MANUFACTURING METHOD THEREOF
 本発明は、金属-セラミックス接合基板およびその製造方法に関し、特に、セラミックス基板の一方の面に電子部品搭載用の金属板(金属回路板)が形成され、他方の面に放熱用の金属ベース板が形成された金属-セラミックス接合基板およびその製造方法に関する。 TECHNICAL FIELD The present invention relates to a metal-ceramic bonding substrate and a manufacturing method thereof, and in particular, a ceramic substrate having a metal plate (metal circuit board) for mounting electronic components formed on one side and a metal base plate for heat dissipation on the other side. and a method of manufacturing the same.
 従来、パワーモジュール用絶縁基板として使用されている金属-セラミックス接合基板では、セラミックス基板の一方の面に金属回路板が接合するとともに他方の面に放熱用金属ベース板が接合し、金属回路板上に半導体チップなどが搭載されている。このような半導体チップなどの発熱素子からの熱を外部に放熱するために、放熱用金属ベース板の裏面に放熱フィンや冷却ジャケットなどが、金属ベース板の周縁部に形成された貫通孔を介してねじ止め或いはボルトで締結することにより取り付けられている。 In conventional metal-ceramic bonded substrates used as insulating substrates for power modules, a metal circuit board is bonded to one side of the ceramic substrate, and a metal base plate for heat dissipation is bonded to the other side. A semiconductor chip is mounted on the In order to dissipate the heat from heat generating elements such as semiconductor chips to the outside, heat dissipating fins, cooling jackets, etc. are placed on the back side of the heat dissipating metal base plate through through holes formed in the peripheral edge of the metal base plate. It is attached by fastening with screws or bolts.
 このような金属-セラミックス接合基板として、セラミックス基板の一方の面に金属回路板が直接接合するとともに他方の面にアルミニウムまたはアルミニウム合金からなる放熱部材が直接接合し、この放熱部材の周縁部に形成されたねじ穴(貫通孔)を介して放熱部材に蓋体をねじ止めすることによって、内部に空間が形成された放熱器が取り付けられた金属-セラミックス接合基板が提案されている(例えば、特許文献1参照)。 As such a metal-ceramic bonding substrate, a metal circuit board is directly bonded to one surface of a ceramic substrate, and a heat radiation member made of aluminum or an aluminum alloy is directly bonded to the other surface of the ceramic substrate. A metal-ceramic bonding substrate has been proposed in which a radiator having a space formed therein is attached by screwing a cover to a heat dissipation member through a screw hole (through hole) formed therein (for example, patent Reference 1).
 しかし、特許文献1の金属-セラミックス接合基板では、内部にセラミックス基板を配置した鋳型内にアルミニウムまたはアルミニウム合金の溶湯を注湯した後に凝固させることによって、セラミックス基板に放熱部材が直接接合されており、放熱部材の強度が高くないため、放熱部材に形成されたねじ穴の周縁部が陥没したり、パワーモジュール用絶縁基板として車両や産業用機械などに使用したときにねじが緩むおそれがある。また、アルミニウム合金の添加金属の成分を調整して放熱部材の強度を高くすると、放熱部材の熱伝導率が低下して放熱性が低下する場合があり、また、金属-セラミックス接合基板にヒートサイクルが付加されたときに、セラミックス基板に割れが発生するなど、金属-セラミックス接合基板の信頼性が低下するおそれがある。 However, in the metal-ceramic bonding substrate of Patent Document 1, a heat dissipating member is directly bonded to the ceramic substrate by pouring molten aluminum or an aluminum alloy into a mold in which the ceramic substrate is placed and then solidifying the molten metal. Since the strength of the heat dissipating member is not high, the peripheral edge of the screw hole formed in the heat dissipating member may be depressed, or the screws may loosen when used as an insulating substrate for power modules in vehicles, industrial machines, etc. In addition, if the components of the additive metals in the aluminum alloy are adjusted to increase the strength of the heat dissipating member, the thermal conductivity of the heat dissipating member may decrease and the heat dissipation performance may deteriorate. is added, there is a risk that the reliability of the metal-ceramic bonded substrate will be reduced, such as cracking occurring in the ceramic substrate.
 また、基板のねじ止め用の貫通孔の周縁部のクラックなどの発生を防止するために、黒鉛と金属の複合体からなる基板の両主面間を繋ぐ貫通孔にパイプ部材を嵌合させることが提案され、このパイプ部材と基板の間の密着性および放熱性を向上させるために、パイプ部材と基板の界面をろう材などで接合することが提案されている(例えば、特許文献2参照)。 In addition, in order to prevent the occurrence of cracks in the periphery of the through-hole for screwing the substrate, a pipe member is fitted into the through-hole connecting both main surfaces of the substrate made of a composite of graphite and metal. has been proposed, and in order to improve the adhesion and heat dissipation between the pipe member and the substrate, it has been proposed to join the interface between the pipe member and the substrate with a brazing material or the like (see, for example, Patent Document 2). .
 しかし、特許文献2の基板では、貫通孔にパイプ部材を嵌合させるだけでは、パイプ部材の固定が十分ではなく、パイプ部材と基板の間の密着性を向上させるために、パイプ部材と基板の界面をろう材などで接合する場合、パイプ部材の外周面または貫通孔の内周面にろう材などを形成するのは容易でなく、ろう材などによりパイプ部材と基板を接合して密着性を十分に向上させるのは困難である。 However, in the substrate of Patent Document 2, it is not sufficient to fix the pipe member only by fitting the pipe member into the through hole. When joining the interface with brazing material, it is not easy to form brazing material on the outer peripheral surface of the pipe member or the inner peripheral surface of the through hole. Enough improvement is difficult.
 このような問題を解消するため、セラミックス基板の一方の面に金属板が接合するとともに、他方の面に金属ベース板が接合した金属-セラミックス接合基板において、金属ベース板の一方の面から他方の面に貫通するように形成された(ねじ止め用の)貫通孔の内周面に、金属ベース板より強度が高い金属からなる環状部材の外周面を直接接合させることにより、セラミックス基板に接合した金属ベース板のねじ止め部の変形を抑制して、金属-セラミックス接合基板の信頼性を高めることを提案している(例えば、特許文献3参照)。 In order to solve such a problem, a metal-ceramic bonded substrate in which a metal plate is bonded to one surface of a ceramic substrate and a metal base plate is bonded to the other surface is provided. Bonded to the ceramic substrate by directly bonding the outer peripheral surface of an annular member made of metal having higher strength than the metal base plate to the inner peripheral surface of the through hole (for screwing) formed so as to penetrate the surface. It has been proposed to improve the reliability of a metal-ceramic bonded substrate by suppressing deformation of the screwed portion of the metal base plate (see, for example, Patent Document 3).
 このような金属-セラミックス接合基板は、金属ベース板より融点および強度が高い金属からなる環状部材と、セラミックス基板とを鋳型内に離間して配置させ、鋳型内のセラミックス基板の両面に接触するとともに環状部材の外周面に接触するように溶湯を注湯した後に冷却して固化させることにより、金属板を形成してセラミックス基板の一方の面に直接接合させるとともに、金属ベース板を形成してセラミックス基板の他方の面に直接接合させ、金属ベース板の一方の面から他方の面に貫通する貫通孔の内周面に環状部材の外周面を直接接合させることによって製造することができる。 In such a metal-ceramic bonding substrate, an annular member made of a metal having a melting point and strength higher than those of a metal base plate and a ceramic substrate are arranged separately in a mold, and both surfaces of the ceramic substrate in the mold are in contact with each other. By pouring molten metal so as to contact the outer peripheral surface of the annular member and then cooling and solidifying it, a metal plate is formed and directly bonded to one surface of the ceramic substrate, and a metal base plate is formed to form the ceramics. It can be manufactured by bonding directly to the other surface of the substrate, and directly bonding the outer peripheral surface of the annular member to the inner peripheral surface of the through hole penetrating from one surface to the other surface of the metal base plate.
特開2007-294891号公報JP 2007-294891 A 特開2005-136369号公報JP-A-2005-136369 特開2013-207133号公報JP 2013-207133 A
 しかし、特許文献3の金属-セラミックス接合基板では、ねじ止め部の変形は抑制されるものの、パワーモジュールの製造やパワーモジュールの使用時において、金属-セラミックス接合基板に熱履歴が付加されたときに、特に金属ベース板に大きな反りが発生し、パワーモジュールの製造工程に不具合が発生したり、金属-セラミックス接合基板の放熱用金属ベース板の裏面に放熱フィンや冷却ジャケットなどが金属ベース板の周縁部に形成された貫通孔を介してボルトなどで締結されたパワーモジュールにおいて、ボルトの締結力が低下して信頼性が低下する恐れがあることがわかってきた。 However, in the metal-ceramic bonding substrate of Patent Document 3, although the deformation of the screwed portion is suppressed, when the metal-ceramic bonding substrate is subjected to heat history during the manufacture of the power module and the use of the power module, In particular, the metal base plate may warp significantly, causing defects in the power module manufacturing process. It has been found that in power modules that are fastened with bolts or the like through through-holes formed in parts, there is a possibility that the fastening force of the bolts will be reduced and the reliability will be lowered.
 したがって、本発明は、このような従来の問題点に鑑み、熱履歴が付加された際でもセラミックス基板のクラックの発生を抑制でき、且つ十分に反りを抑制することができる金属-セラミックス接合基板を提供するとともに、その金属-セラミックス接合基板の製造方法を提供することを目的とする。 Therefore, in view of such conventional problems, the present invention provides a metal-ceramic bonded substrate that can suppress the occurrence of cracks in the ceramic substrate even when a thermal history is applied and can sufficiently suppress warping. It is an object of the present invention to provide a metal-ceramic bonded substrate and a manufacturing method thereof.
 本発明の金属-セラミックス接合基板は、セラミックス基板の一方の面に金属板が接合され、他方の面に金属ベース板が接合された金属-セラミックス接合基板において、金属ベース板の側面に、金属ベース板より強度が高い金属からなる板状の強化部材の側面が接合していることを特徴とする。 The metal-ceramic bonded substrate of the present invention is a metal-ceramic bonded substrate in which a metal plate is bonded to one surface of a ceramic substrate and a metal base plate is bonded to the other surface, and a metal base is attached to a side surface of the metal base plate. The side surface of a plate-like reinforcing member made of metal having a higher strength than the plate is joined.
 前記強化部材が貫通孔を備えていることが好ましく、前記貫通孔が、前記強化部材の主面に対して垂直方向に延びていることが好ましい。 The reinforcing member preferably has a through hole, and the through hole preferably extends in a direction perpendicular to the main surface of the reinforcing member.
 前記金属ベース板が前記セラミックス基板に直接接合していることが好ましく、前記金属板が前記セラミックス基板に直接接合していることが好ましい。 The metal base plate is preferably directly bonded to the ceramic substrate, and the metal plate is preferably directly bonded to the ceramic substrate.
 前記金属ベース板がアルミニウムまたはアルミニウム合金からなることが好ましく、前記強化部材が、炭素鋼またはステンレスからなることが好ましく、前記強化部材が150MPa以上の引張強度を有する材料であることが好ましい。 The metal base plate is preferably made of aluminum or an aluminum alloy, the reinforcing member is preferably made of carbon steel or stainless steel, and the reinforcing member is preferably made of a material having a tensile strength of 150 MPa or more.
 前記金属板がアルミニウムまたはアルミニウム合金からなることが好ましく、前記金属板が99.7質量%以上のアルミニウムを含有するアルミニウムからなることが好ましい。 The metal plate is preferably made of aluminum or an aluminum alloy, and preferably made of aluminum containing 99.7% by mass or more of aluminum.
 前記強化部材の主面にアルミニウムまたはアルミニウム合金が接合していることが好ましく、前記強化部材は、前記セラミックス基板の主面に垂直な方向から平面視したときの前記セラミックス基板と前記ベース板の接合領域以外の領域に形成されていることが好ましく、前記強化部材と前記金属ベース板の接合界面に合金からなる接合層が形成されていることが好ましい。 It is preferable that aluminum or an aluminum alloy is bonded to the main surface of the reinforcing member, and the reinforcing member joins the ceramic substrate and the base plate when viewed in plan from a direction perpendicular to the main surface of the ceramic substrate. It is preferable that the joint layer is formed in a region other than the region, and that a joint layer made of an alloy is formed at the joint interface between the reinforcing member and the metal base plate.
 前記強化部材が矩形であることが好ましく、前記強化部材が前記金属ベース板を取り囲む形状であってもよい。 The reinforcing member is preferably rectangular, and may have a shape surrounding the metal base plate.
 本発明の金属-セラミックス接合基板の製造方法は、セラミックス基板の一方の面に金属板が接合するとともに、他方の面に金属ベース板が接合した金属-セラミックス接合基板の製造方法において、金属ベース板より融点および強度が高い金属からなる板状の強化部材と、セラミックス基板とを鋳型内に離間して配置させ、鋳型内のセラミックス基板の両面に接触するとともに強化部材の側面に接触するように金属の溶湯を注湯した後に冷却して固化させることにより、金属板を形成してセラミックス基板の一方の面に直接接合させるとともに、金属ベース板を形成してセラミックス基板の他方の面に直接接合させ、金属ベース板の側面に強化部材の側面を接合させることを特徴とする。 The method for producing a metal-ceramic bonded substrate of the present invention is a method for producing a metal-ceramic bonded substrate in which a metal plate is bonded to one surface of a ceramic substrate and a metal base plate is bonded to the other surface of the ceramic substrate, wherein the metal base plate A plate-shaped reinforcing member made of a metal having a higher melting point and higher strength and a ceramic substrate are arranged in the mold with a gap therebetween, and the metal is placed in contact with both sides of the ceramic substrate in the mold and the side surfaces of the reinforcing member. After pouring the molten metal, the metal plate is formed and directly bonded to one surface of the ceramic substrate by cooling and solidifying, and the metal base plate is formed and directly bonded to the other surface of the ceramic substrate. 1) joining the side surface of the reinforcing member to the side surface of the metal base plate;
 前記強化部材が貫通孔を備えていることが好ましく、前記貫通孔が、前記強化部材の主面に対して垂直方向に延びていることが好ましい。 The reinforcing member preferably has a through hole, and the through hole preferably extends in a direction perpendicular to the main surface of the reinforcing member.
 前記金属ベース板を形成するための金属の溶湯がアルミニウムまたはアルミニウム合金からなることが好ましく、前記強化部材が、炭素鋼またはステンレスからなることが好ましく、前記強化部材が150MPa以上の引張強度を有することが好ましい。 Preferably, the molten metal for forming the metal base plate is made of aluminum or an aluminum alloy, the reinforcing member is preferably made of carbon steel or stainless steel, and the reinforcing member has a tensile strength of 150 MPa or more. is preferred.
 前記金属板を形成するための金属の溶湯がアルミニウムまたはアルミニウム合金からなることが好ましく、前記金属板を形成するための金属の溶湯が99.7質量%以上のアルミニウムを含有するアルミニウムからなることが好ましく、前記金属の溶湯を注湯する際、前記強化部材の主面に接触するように前記金属の溶湯を注湯した後に冷却して固化させることにより、強化部材の主面にアルミニウムまたはアルミニウム合金を接合することが好ましい。 The molten metal for forming the metal plate is preferably made of aluminum or an aluminum alloy, and the molten metal for forming the metal plate is preferably made of aluminum containing 99.7% by mass or more of aluminum. Preferably, when pouring the molten metal, the molten metal is poured so as to come into contact with the main surface of the reinforcing member and then cooled and solidified so that the main surface of the reinforcing member is coated with aluminum or an aluminum alloy. is preferably joined.
 前記強化部材を、前記セラミックス基板の主面に垂直な方向から平面視したときの前記セラミックス基板と前記ベース板の接合領域以外の領域に接合することが好ましく、前記強化部材と前記金属ベース板の接合界面に合金からなる接合層を形成することが好ましい。 Preferably, the reinforcing member is bonded to a region other than the bonding region between the ceramic substrate and the base plate when viewed from above in a direction perpendicular to the main surface of the ceramic substrate, and the bonding between the reinforcing member and the metal base plate. It is preferable to form a bonding layer made of an alloy on the bonding interface.
 前記強化部材が矩形であることが好ましく、前記強化部材が前記金属ベース板を取り囲む形状であってもよい。 The reinforcing member is preferably rectangular, and may have a shape surrounding the metal base plate.
 本発明は、熱履歴が付加された際でもセラミックス基板のクラックの発生を抑制でき、且つ反りを十分に抑制することができる金属-セラミックス接合基板およびその製造方法を提供することができる。 The present invention can provide a metal-ceramic bonded substrate that can suppress the occurrence of cracks in the ceramic substrate and sufficiently suppress warping even when a thermal history is applied, and a method for manufacturing the same.
本発明による金属-セラミックス接合基板の実施の形態を示す平面図(上面図)である。1 is a plan view (top view) showing an embodiment of a metal-ceramic bonding substrate according to the present invention; FIG. 図1Aの金属-セラミックス接合基板のA-A線断面図である。FIG. 1B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 1A taken along the line AA. 図1Aの金属-セラミックス接合基板のB-B線断面図である。FIG. 1B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 1A taken along the line BB. 図1Aの金属-セラミックス接合基板のC-C線断面図である。FIG. 1B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 1A taken along line CC. 図1Aの金属-セラミックス接合基板の背面図である。1B is a rear view of the metal-ceramic bonding substrate of FIG. 1A; FIG. 図1に示す金属-セラミックス接合基板を製造するために使用する鋳型構成部材である下型(鋳型)の平面図(上面図)である。FIG. 2 is a plan view (top view) of a lower mold (mold), which is a mold component used for manufacturing the metal-ceramic bonded substrate shown in FIG. 1; 図2Aの下型(鋳型)のA-A線断面図である。FIG. 2B is a cross-sectional view of the lower mold (mold) of FIG. 2A taken along the line AA. 図2Aの下型(鋳型)のB-B線断面図である。FIG. 2B is a cross-sectional view along the line BB of the lower mold (mold) of FIG. 2A; 図2Aの下型(鋳型)のC-C線断面図である。FIG. 2B is a cross-sectional view taken along the line CC of the lower mold (mold) of FIG. 2A; 図2Aの下型(鋳型)の背面図である。2B is a rear view of the lower mold (mold) of FIG. 2A; FIG. 図2Aの下型(鋳型)のD-D線断面図である。FIG. 2B is a cross-sectional view taken along line DD of the lower mold (mold) of FIG. 2A; 図2Aの下型(鋳型)のE-E線断面図である。FIG. 2B is a cross-sectional view taken along line EE of the lower mold (mold) of FIG. 2A; 図2Aの下型(鋳型)のF-F線断面図である。FIG. 2B is a cross-sectional view taken along line FF of the lower mold (mold) of FIG. 2A; 図2の下型(鋳型)を構成する中型の平面図(上面図)である。Fig. 3 is a plan view (top view) of a middle mold that constitutes the lower mold (mold) of Fig. 2; 図3Aの中型のA-A線断面図である。FIG. 3B is a cross-sectional view of the medium size of FIG. 3A taken along the line AA. 図3Aの中型のB-B線断面図である。FIG. 3B is a cross-sectional view along the line BB of the medium size of FIG. 3A; 図3Aの中型のC-C線断面図である。FIG. 3B is a cross-sectional view of the middle size of FIG. 3A taken along the line CC. 図3Aの中型の背面図である。Figure 3B is a rear view of the medium of Figure 3A; 図2の下型(鋳型)を構成する外型の平面図(上面図)である。3 is a plan view (top view) of an outer mold that constitutes the lower mold (mold) of FIG. 2. FIG. 図1に示す金属-セラミックス接合基板を製造するために使用する鋳型構成部材である上型(鋳型)の平面図(下面図)である。FIG. 2 is a plan view (bottom view) of an upper mold (mold) that is a mold component used to manufacture the metal-ceramic bonded substrate shown in FIG. 1; 図1に示す金属-セラミックス接合基板を製造するために使用する鋳型構成部材である上型(鋳型)の平面図(上面図)である。FIG. 2 is a plan view (top view) of an upper mold (mold) that is a mold component used for manufacturing the metal-ceramic bonded substrate shown in FIG. 1; 図2の下型に図5の上型を配置したときのA-A線に相当する断面図である。FIG. 6 is a cross-sectional view corresponding to line AA when the upper mold of FIG. 5 is placed on the lower mold of FIG. 2; 図2の下型に図5の上型を配置したときのB-B線に相当する断面図である。6 is a sectional view corresponding to line BB when the upper mold of FIG. 5 is arranged on the lower mold of FIG. 2; FIG. 図2の下型に図5の上型を配置したときのC-C線に相当する断面図である。6 is a cross-sectional view corresponding to the CC line when the upper mold of FIG. 5 is placed on the lower mold of FIG. 2; FIG. 図2の下型に図5の上型を配置したときのD-D線に相当する断面図である。6 is a sectional view corresponding to line DD when the upper mold of FIG. 5 is placed on the lower mold of FIG. 2; FIG. 図2の下型に図5の上型を配置したときのE-E線に相当する断面図である。FIG. 6 is a cross-sectional view corresponding to line EE when the upper mold of FIG. 5 is placed on the lower mold of FIG. 2; 図2の下型に図5の上型を配置したときのF-F線に相当する断面図である。6 is a sectional view corresponding to line FF when the upper mold of FIG. 5 is placed on the lower mold of FIG. 2; FIG. 本発明の金属-セラミックス接合基板の第2の実施の形態を示す平面図である。FIG. 2 is a plan view showing a second embodiment of the metal-ceramic bonding substrate of the present invention; 図7Aの金属-セラミックス接合基板のA-A線断面図である。FIG. 7B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 7A taken along the line AA. 図7Aの金属-セラミックス接合基板のB-B線断面図である。FIG. 7B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 7A taken along the line BB. 図7Aの金属-セラミックス接合基板のC-C線断面図である。FIG. 7B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 7A taken along line CC. 図7Aの金属-セラミックス接合基板の背面図である。7B is a rear view of the metal-ceramic bonding substrate of FIG. 7A. FIG. 本発明の金属-セラミックス接合基板の第3の実施の形態を示す平面図である。FIG. 5 is a plan view showing a third embodiment of the metal-ceramic bonding substrate of the present invention; 図8Aの金属-セラミックス接合基板のA-A線断面図である。FIG. 8B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 8A taken along the line AA. 図8Aの金属-セラミックス接合基板のB-B線断面図である。FIG. 8B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 8A taken along the line BB. 図8Aの金属-セラミックス接合基板のC-C線断面図である。FIG. 8B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 8A taken along the line CC. 図8Aの金属-セラミックス接合基板の背面図である。8B is a rear view of the metal-ceramic bonding substrate of FIG. 8A. FIG. 本発明の金属-セラミックス接合基板の第4の実施の形態を示す平面図である。FIG. 5 is a plan view showing a fourth embodiment of the metal-ceramic bonding substrate of the present invention; 図9Aの金属-セラミックス接合基板のA-A線断面図である。FIG. 9B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 9A taken along the line AA. 図9Aの金属-セラミックス接合基板のB-B線断面図である。FIG. 9B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 9A taken along the line BB. 図9Aの金属-セラミックス接合基板のC-C線断面図である。FIG. 9B is a cross-sectional view of the metal-ceramic bonding substrate of FIG. 9A taken along the line CC. 図9Aの金属-セラミックス接合基板の背面図である。9B is a rear view of the metal-ceramic bonding substrate of FIG. 9A. FIG.
<金属-セラミックス接合基板>
 本発明の金属-セラミックス接合基板は、セラミックス基板の一方の面に金属板が接合され、他方の面に金属ベース板が接合された金属-セラミックス接合基板において、金属ベース板の側面に、金属ベース板より強度が高い金属からなる板状の強化部材の側面が接合していることを特徴とする。
<Metal-ceramic bonded substrate>
The metal-ceramic bonded substrate of the present invention is a metal-ceramic bonded substrate in which a metal plate is bonded to one surface of a ceramic substrate and a metal base plate is bonded to the other surface, and a metal base is attached to a side surface of the metal base plate. The side surface of a plate-like reinforcing member made of metal having a higher strength than the plate is joined.
 以下、図面を参照して、本発明による金属-セラミックス接合基板の実施の形態の例について詳細に説明する。 Hereinafter, examples of embodiments of the metal-ceramic bonding substrate according to the present invention will be described in detail with reference to the drawings.
(第1の実施の形態)
 図1A~図1Eに示すように、本発明による金属-セラミックス接合基板1の実施の形態は、平面形状が略矩形の電気絶縁性のセラミックス基板10と、このセラミックス基板10の側面(の一部)および他方の面(図示した実施の形態では裏面(下面))の全面に接合した平面形状が略矩形の金属ベース板12と、セラミックス基板10の一方の面(図示した実施の形態では上面)に直接接合した1以上(図示した実施の形態では3つ)の回路パターン用の金属板14とを備え、金属ベース板12の側面(端部)には、平面形状が略矩形で略均一な厚さを有する平板状の金属ベース板12より強度(引張強度)が高い金属からなる板状の強化部材16の側面が(金属ベース板12の外側の側面に)接合している。図1A~図1Eにおいては金属ベース板12の右側の側面と左側の側面(両端面)に各1枚の強化部材16の側面が接合している状態を示している。金属ベース板12の側面に強化部材16を接合することにより、熱履歴が付加された際でも反りを十分に抑制することができる金属-セラミックス接合基板を提供することができる。
(First embodiment)
As shown in FIGS. 1A to 1E, an embodiment of a metal-ceramic bonding substrate 1 according to the present invention includes an electrically insulating ceramic substrate 10 having a substantially rectangular planar shape and (a part of) a side surface of the ceramic substrate 10. ) and the other surface (rear surface (lower surface) in the illustrated embodiment), the metal base plate 12 having a substantially rectangular planar shape and one surface (the upper surface in the illustrated embodiment) of the ceramic substrate 10. and one or more (three in the illustrated embodiment) metal plates 14 for circuit patterns directly bonded to the metal base plate 12, and on the side surface (end portion) of the metal base plate 12, the planar shape is substantially rectangular and substantially uniform. The side surface of a plate-like reinforcing member 16 made of a metal having a higher strength (tensile strength) than the thick plate-like metal base plate 12 is joined (to the outer side surface of the metal base plate 12). FIGS. 1A to 1E show a state in which the side surfaces of one reinforcement member 16 are joined to the right side surface and the left side surface (both end surfaces) of the metal base plate 12 . By bonding the reinforcing member 16 to the side surface of the metal base plate 12, it is possible to provide a metal-ceramic bonding substrate that can sufficiently suppress warping even when thermal history is applied.
 強化部材16は、強化部材16の主面(板面)に対して略垂直方向に延びる貫通孔18を備えていることが好ましい。図1Aにおいては1枚の強化部材16の端部に貫通孔18が2個形成されているのが示されている。 The reinforcing member 16 preferably has a through hole 18 extending substantially perpendicularly to the main surface (plate surface) of the reinforcing member 16 . FIG. 1A shows that two through-holes 18 are formed at the end of one reinforcement member 16 .
 パワーモジュールなどの半導体装置を製造する際に、強化部材16の貫通孔18を他の部材とネジやボルトで締結するための締結用の孔として使用できる。例えば、放熱フィンや水冷ジャケットなどの放熱部材(図示しない)や、回路パターン用の金属板14やそれに搭載された半導体など囲む筺体(図示しない)を、貫通孔18を介してネジやボルト等で取り付けることができる。
 前述のとおり、本発明においては金属ベース板12の側面に強化部材16を接合することにより、熱履歴が付加された際でも反りが十分に抑制され且つネジやボルトで締結する部位が強化部材16であることから、例えばヒートサイクル試験を行った後もネジ止め部(強化部材16)の変形が十分に小さく、ネジ(またはボルト)のゆるみ(締め付けトルク)の低下を十分に抑制することができる。
 また、図1B~図1Dに示されるように、強化部材16の裏面(回路パターン用の金属板14とは反対側の面)と金属ベース板12の裏面(回路パターン用の金属板14とは反対側の面)は略同一平面となっており、強化部材16に接合されて一体となった金属ベース板12を前記放熱部材などに隙間なく良好に接触させた状態で、組み付けることができる。
When manufacturing a semiconductor device such as a power module, the through holes 18 of the reinforcing member 16 can be used as fastening holes for fastening to other members with screws or bolts. For example, a heat dissipating member (not shown) such as a heat dissipating fin or a water cooling jacket, or a housing (not shown) surrounding the metal plate 14 for circuit patterns and the semiconductor mounted thereon may be screwed or bolted through the through holes 18. can be installed.
As described above, in the present invention, by bonding the reinforcing member 16 to the side surface of the metal base plate 12, warping is sufficiently suppressed even when thermal history is applied, and the portions to be fastened with screws or bolts are strengthened by the reinforcing member 16. Therefore, even after a heat cycle test, for example, the deformation of the screwed portion (reinforcing member 16) is sufficiently small, and the loosening (tightening torque) of the screw (or bolt) can be sufficiently suppressed. .
1B to 1D, the back surface of the reinforcing member 16 (the surface opposite to the circuit pattern metal plate 14) and the back surface of the metal base plate 12 (the circuit pattern metal plate 14 is The surface on the opposite side) is approximately the same plane, and the metal base plate 12 joined to the reinforcing member 16 and integrated can be assembled in a state of being in good contact with the heat dissipating member without gaps.
 強化部材16は、金属ベース板12より強度が大きく、例えば150MPa以上、さらには200MPa以上の引張強度を有する材料であることが好ましく、材質として炭素鋼またはステンレスからなることが好ましい。 The reinforcing member 16 is stronger than the metal base plate 12, and is preferably made of a material having a tensile strength of, for example, 150 MPa or more, further 200 MPa or more, and is preferably made of carbon steel or stainless steel.
 金属ベース板12はセラミックス基板10に直接接合しているのが好ましく、回路パターン用の金属板14はセラミックス基板10に接合しているのが好ましい。また、金属ベース板12はアルミニウムまたはアルミニウム合金からなるのが好ましく、回路パターン用の金属板14はアルミニウムまたはアルミニウム合金からなるのが好ましい。
 また、金属ベース板12は、例えば70~130MPa(、さらには75~120MPa)程度の引張強度を有する材料であることが好ましく、材質としてアルミニウムまたはアルミニウム合金からなることが好ましい。
The metal base plate 12 is preferably directly bonded to the ceramics substrate 10 , and the circuit pattern metal plate 14 is preferably bonded to the ceramics substrate 10 . Also, the metal base plate 12 is preferably made of aluminum or an aluminum alloy, and the metal plate 14 for the circuit pattern is preferably made of aluminum or an aluminum alloy.
Moreover, the metal base plate 12 is preferably made of a material having a tensile strength of, for example, about 70 to 130 MPa (and further 75 to 120 MPa), and is preferably made of aluminum or an aluminum alloy.
 回路パターン用の金属板14は半導体素子などのチップ部品が搭載されるため、電気伝導性、熱伝導性に優れた金属が好ましく、金属がアルミニウムの場合は99.7質量%以上、さらに好ましくは99.9質量%以上のアルミニウムを含むアルミニウムまたはアルミニウム合金であることが好ましい。 Chip parts such as semiconductor elements are mounted on the metal plate 14 for the circuit pattern, so a metal with excellent electrical conductivity and thermal conductivity is preferable. Aluminum or an aluminum alloy containing 99.9% by mass or more of aluminum is preferred.
 金属ベース板12は熱伝導性とともに構成部材としてある程度の硬さを有することが望ましいので、回路用の金属板14より硬さが大きいことが好ましい。 It is desirable that the metal base plate 12 has a certain degree of hardness as a structural member as well as thermal conductivity.
 セラミックス基板10は、回路パターン用の金属板14が複数あるときのそれぞれの金属板14間や、回路パターン用の金属板14と金属ベース板12間との絶縁性を保つ機能を有している。セラミックス基板10の主成分(組成として85質量%以上)は、アルミナ、窒化アルミニウム、窒化珪素および炭化珪素から選択される1種以上からなることが好ましい。 The ceramic substrate 10 has a function of maintaining insulation between the metal plates 14 when there are a plurality of metal plates 14 for circuit patterns and between the metal plates 14 for circuit patterns and the metal base plate 12 . . The main component of ceramic substrate 10 (having a composition of 85% by mass or more) is preferably one or more selected from alumina, aluminum nitride, silicon nitride and silicon carbide.
 また、強化部材16は、図1に示すようにセラミックス基板10の主面に垂直方向(上方)から平面視したときのセラミックス基板10と金属ベース板12の接合領域以外の領域に形成されていることが好ましい。放熱性を確保するためにセラミックス基板10と金属ベース板12の接合領域に強化部材16を形成しないのが好ましい。 1, the reinforcing member 16 is formed in a region other than the bonding region between the ceramic substrate 10 and the metal base plate 12 when viewed from above in a direction perpendicular to the main surface of the ceramic substrate 10. is preferred. It is preferable not to form the reinforcing member 16 in the bonding area between the ceramic substrate 10 and the metal base plate 12 in order to ensure heat dissipation.
 また、炭素鋼からなる強化部材16を使用した場合は、強化部材16とアルミニウムまたはアルミニウム合金からなる金属ベース板12の接合界面には、例えば数100μm以下の厚さのFeとAlの合金層(接合層、図示しない)が形成されていることが好ましく、強化部材16と金属ベース板12が強固に接合される。さらに前記合金層より金属ベース板12の側にFeが拡散して、Alの母相にFeとAlの金属間化合物が形成(分散)された合金組織を有する金属ベース板12としてもよい。FeのAlへの拡散や金属間化合物が形成されることにより金属ベース板12の強度が向上する。 Further, when the reinforcing member 16 made of carbon steel is used, the bonding interface between the reinforcing member 16 and the metal base plate 12 made of aluminum or an aluminum alloy has, for example, an alloy layer of Fe and Al with a thickness of several 100 μm or less ( A bonding layer (not shown) is preferably formed, and the reinforcing member 16 and the metal base plate 12 are firmly bonded. Further, the metal base plate 12 may have an alloy structure in which Fe diffuses from the alloy layer to the metal base plate 12 side and an intermetallic compound of Fe and Al is formed (dispersed) in the Al matrix. The strength of the metal base plate 12 is improved by the diffusion of Fe into Al and the formation of an intermetallic compound.
<製造方法>
 本発明の金属-セラミックス接合基板の製造方法は、セラミックス基板の一方の面に金属板が接合するとともに、他方の面に金属ベース板が接合した金属-セラミックス接合基板の製造方法において、金属ベース板より融点および強度が高い金属からなる板状の強化部材と、セラミックス基板とを鋳型内に離間して配置させ、鋳型内のセラミックス基板の両面に接触するとともに強化部材の側面に接触するように金属の溶湯を注湯した後に冷却して固化させることにより、金属板を形成してセラミックス基板の一方の面に直接接合させるとともに、金属ベース板を形成してセラミックス基板の他方の面に直接接合させ、金属ベース板の側面に強化部材の側面を接合させることを特徴とする。
<Manufacturing method>
The method for producing a metal-ceramic bonded substrate of the present invention is a method for producing a metal-ceramic bonded substrate in which a metal plate is bonded to one surface of a ceramic substrate and a metal base plate is bonded to the other surface of the ceramic substrate, wherein the metal base plate A plate-shaped reinforcing member made of a metal having a higher melting point and higher strength and a ceramic substrate are arranged in the mold with a gap therebetween, and the metal is placed in contact with both sides of the ceramic substrate in the mold and the side surfaces of the reinforcing member. After pouring the molten metal, the metal plate is formed and directly bonded to one surface of the ceramic substrate by cooling and solidifying, and the metal base plate is formed and directly bonded to the other surface of the ceramic substrate. 1) joining the side surface of the reinforcing member to the side surface of the metal base plate;
 以下、本発明の金属-セラミックス接合基板の製造方法の実施の形態の例として、溶湯接合法によりセラミックス基板と金属ベース板、回路パターン用の金属板および強化部材を接合して金属―セラミックス接合基板を製造する方法について図を用いて説明する。 Hereinafter, as an embodiment of the method for manufacturing a metal-ceramic bonded substrate of the present invention, a metal-ceramic bonded substrate is obtained by bonding a ceramic substrate, a metal base plate, a metal plate for circuit patterns, and a reinforcing member by a molten metal bonding method. will be described with reference to the drawings.
 図1A~Eに示す第1の実施の形態の金属-セラミックス接合基板1を溶湯接合法で製造するに際し使用する鋳型について説明する。 A mold used when manufacturing the metal-ceramic bonding substrate 1 of the first embodiment shown in FIGS. 1A to 1E by the molten metal bonding method will be described.
 まず、鋳型構成部材である下型(鋳型)について、図2A~図2Hを用いて説明する。ここで例示する下型(鋳型)は、中型(鋳型)と外型(鋳型)が嵌め合わされた構造を有している。図2Aは下型100を構成する中型20と外型40を上方から見た平面図(上面図)であり、図2Bは図2AのA-A線断面図、図2Cは図2AのB-B線断面図、図2Dは図2AのC-C線断面図、図2Eは図2Aの背面図、図2Fは図2AのD-D線断面図、図2Gは図2AのE-E線断面図、図2Hは図2AのF-F線断面図である。なお、断面図には便宜上セラミックス基板10を配置した状態を点線で示した。セラミックス基板10を配置した点線で示す部分は、鋳型内のセラミックス基板収容部である。 First, the lower mold (mold), which is a mold component, will be described with reference to FIGS. 2A to 2H. The lower mold (mold) illustrated here has a structure in which a middle mold (mold) and an outer mold (mold) are fitted together. 2A is a plan view (top view) of the middle mold 20 and the outer mold 40 that constitute the lower mold 100, FIG. 2D is a cross-sectional view along the CC line of FIG. 2A; FIG. 2E is a rear view of FIG. 2A; FIG. 2F is a cross-sectional view along the DD line of FIG. 2A; A cross-sectional view, FIG. 2H, is a cross-sectional view taken along line FF of FIG. 2A. In addition, in the cross-sectional view, the state in which the ceramic substrate 10 is arranged is indicated by a dotted line for the sake of convenience. A portion indicated by a dotted line where the ceramic substrate 10 is arranged is a ceramic substrate accommodating portion in the mold.
 中型20の表面には、鋳造時に絶縁用のセラミックス基板10と当接する凸部であるセラミックス基板支持部21と、回路パターン用の金属板14に対応する凹部である回路用の金属板形成部22と、金属ベース板12に対応する(セラミックス基板収容部の下面に位置する)凹部である金属ベース板形成部23と、強化部材16を収容する凹部である強化部材収容部24とが形成され、強化部材収容部24には強化部材16の貫通孔18に対応する凸部25が形成されている。なお、強化部材収容部24は、金属ベース板形成部23に隣接して、金属ベース板形成部23と一体的に形成されている。中型20の内部において、強化部材16が配置される部分を便宜上「強化部材収容部24」と表現する。また、溶湯が注入されて金属ベース板12を形成する部分を便宜上「金属ベース板形成部23」と表現する。 On the surface of the middle mold 20, there are formed a ceramic substrate supporting portion 21 which is a convex portion that abuts against the ceramic substrate 10 for insulation during casting, and a metal plate forming portion 22 for circuit which is a concave portion corresponding to the metal plate 14 for circuit pattern. , a metal base plate forming portion 23 that is a recess (located on the lower surface of the ceramic substrate accommodation portion) corresponding to the metal base plate 12 and a reinforcing member accommodation portion 24 that is a recess for accommodating the reinforcing member 16 are formed, A convex portion 25 corresponding to the through hole 18 of the reinforcing member 16 is formed in the reinforcing member accommodating portion 24 . The reinforcing member accommodating portion 24 is adjacent to the metal base plate forming portion 23 and formed integrally with the metal base plate forming portion 23 . A portion of the middle mold 20 where the reinforcing member 16 is arranged is referred to as a "reinforcing member accommodating portion 24" for convenience. For convenience, the portion where the molten metal is injected to form the metal base plate 12 is referred to as "metal base plate forming portion 23".
 前記セラミックス基板支持部21はセラミックス基板10の周囲(側面)を囲むように形成され、セラミックス基板支持部21の外周部はセラミックス基板10の一方の面(回路パターン側の面)の周縁部に当接してセラミックス基板10を所定の位置で支持するために略L字型の断面を有する段差が設けられており、セラミックス基板を収容する空間であるセラミックス基板収容部が形成される。
 セラミックス基板支持部21は、L字型の断面を呈することにより、セラミックス基板10をセラミックス基板収容部に配置した後、アルミニウムまたはアルミニウム合金の溶湯を鋳型内に注湯した際に、セラミックス基板10が所定の位置からずれることを防止できるので好ましい。
 よって、L字型の断面であるセラミックス基板支持部21の先端(上端部)はセラミックス基板10を配置したときに、セラミックス基板10の上面(金属ベース板側の面)の高さと同じか低いことが望ましい。ただし低すぎる場合、すなわちセラミックス基板の一方の面(回路パターン側の面)と同じ高さ或いは低いとセラミックス基板10の位置ずれが発生する可能性が高い。よって、セラミックス基板支持部21の先端は、セラミックス基板支持部21にセラミックス基板10を載せたときに、セラミックス基板10の一方の面(回路パターン側の面、下面)からセラミックス基板10の厚さの概ね半分以上の高さからセラミックス基板10の厚さと同等の高さであることが好ましい。
 なお、前記セラミックス基板支持部21の先端部が、セラミックス基板10の上面と同じか高い場合は、セラミックス基板10の側面に金属ベース板12は接合しない状態となる(ただし、実際にはセラミックス基板10の側面とセラミックス基板支持部21との間には若干のあそび(隙間)を設けて配置しやすいようにするため、セラミックス基板の10の側面に金属ベース板が接合していてもよい。)。
 このセラミックス基板支持部21の上面(セラミックス基板の一方の面が当接する面)の略中央部には、回路パターン用の金属板14を形成するための1以上(図示した実施の形態では3つ)の凹部(金属板形成部)22が形成されている。この金属板形成部22は、セラミックス基板支持部21を介して金属ベース板形成部23から離間しており、セラミックス基板10を配置したときに金属ベース板12と金属板14との間の絶縁を確保するようになっている。
The ceramic substrate supporting portion 21 is formed so as to surround the periphery (side surface) of the ceramic substrate 10, and the outer peripheral portion of the ceramic substrate supporting portion 21 abuts on the peripheral portion of one surface (the surface on the circuit pattern side) of the ceramic substrate 10. A step having a substantially L-shaped cross section is provided to support the ceramic substrate 10 at a predetermined position in contact therewith, forming a ceramic substrate accommodating portion which is a space for accommodating the ceramic substrate.
The ceramic substrate supporting portion 21 has an L-shaped cross section, so that when the molten aluminum or aluminum alloy is poured into the mold after the ceramic substrate 10 is placed in the ceramic substrate accommodating portion, the ceramic substrate 10 is This is preferable because it can prevent deviation from the predetermined position.
Therefore, when the ceramic substrate 10 is placed, the tip (upper end) of the ceramic substrate support portion 21, which has an L-shaped cross section, must be at the same height or lower than the upper surface (the surface on the side of the metal base plate) of the ceramic substrate 10. is desirable. However, if it is too low, that is, if it is the same height as or lower than one surface of the ceramics substrate (the surface on the circuit pattern side), there is a high possibility that the ceramics substrate 10 will be misaligned. Therefore, when the ceramics substrate 10 is placed on the ceramics substrate supporter 21, the tip of the ceramics substrate supporter 21 has a thickness corresponding to the thickness of the ceramics substrate 10 from one surface of the ceramics substrate 10 (the surface on the circuit pattern side, the lower surface). It is preferable that the height is approximately half or more to the same height as the thickness of the ceramic substrate 10 .
If the tip of the ceramic substrate supporting portion 21 is at the same level as or higher than the upper surface of the ceramic substrate 10, the metal base plate 12 is not joined to the side surface of the ceramic substrate 10 (however, in practice, the ceramic substrate 10 A metal base plate may be joined to the side surface of the ceramic substrate 10 in order to provide a slight clearance (gap) between the side surface of the ceramic substrate 10 and the ceramic substrate supporting portion 21 for easy placement.).
At least one (three in the illustrated embodiment) for forming a metal plate 14 for a circuit pattern is provided approximately in the center of the upper surface of the ceramic substrate supporting portion 21 (the surface with which one surface of the ceramic substrate abuts). ) (metal plate forming portion) 22 are formed. The metal plate forming portion 22 is separated from the metal base plate forming portion 23 via the ceramic substrate supporting portion 21, and provides insulation between the metal base plate 12 and the metal plate 14 when the ceramic substrate 10 is arranged. It is designed to be secured.
 中型20の金属ベース板形成部23に隣接した表面には凹部である金属溶湯の湯道26が形成されており、中型20の回路パターン用の金属板形成部22の表面(底面)には貫通孔である金属溶湯の注湯孔27(図2Aにおいて4つの貫通孔が示される)が形成されている。 On the surface adjacent to the metal base plate forming portion 23 of the middle mold 20, a runner 26 for molten metal, which is a concave portion, is formed. Holes 27 (four through-holes are shown in FIG. 2A) for pouring molten metal are formed.
 図3Aは、上記図2の下型を構成する中型20の平面図(上面図)を模式的に例示したものである。
 また、図4に上記図2の下型100を構成する外型40を上方から見た平面図(上面図)を模式的に例示する。
FIG. 3A schematically illustrates a plan view (top view) of the middle die 20 that constitutes the lower die of FIG.
4 schematically illustrates a plan view (top view) of the outer mold 40 constituting the lower mold 100 of FIG. 2 as viewed from above.
 外型40には、鋳造時に組み合わせることになる鋳型構成部材である後述の上型200(図5)の溶湯貯留部の空間に嵌合する凸部41があり、鋳造時には凸部41の上面に金属溶湯が注がれる。
 外型40の表面(凸部41)には、回路用の金属板形成部22に溶湯を供給するための溶湯流入口43と溝状の湯道44が形成されている。また、中型20の回路用の金属板形成部22の前記注湯孔27は中型20の板厚を直線的に貫通しており、その貫通口は枝分かれした外型の湯道44の溝の先端付近につながっている。
The outer mold 40 has a convex portion 41 that fits into the space of the molten metal storage portion of an upper mold 200 (FIG. 5), which is a mold component to be combined during casting. Molten metal is poured.
A molten metal inlet 43 and a grooved runner 44 for supplying molten metal to the circuit metal plate forming portion 22 are formed on the surface (convex portion 41 ) of the outer mold 40 . The pouring hole 27 of the metal plate forming part 22 for the circuit of the middle mold 20 straightly penetrates the plate thickness of the middle mold 20, and the through hole is the tip of the groove of the branched runner 44 of the outer mold. connected nearby.
 鋳造時には凸部41の上面部分に金属溶湯が注がれ、その溶湯が加圧されて溶湯流入口43から湯道44へと送給されることになる。したがって、図2A、図3A、図4Aにおいて、上側が温度勾配の高温側、下側が温度勾配の低温側となる。
 なお、金属ベース板形成部23への溶湯を供給するための湯道26は、回路用の金属板形成部22に溶湯を供給するための湯道44とは別の経路となり、溶湯流入口42から金属溶湯が湯道26に供給される。
During casting, molten metal is poured onto the upper surface of the projection 41 , and the molten metal is pressurized and fed from the molten metal inlet 43 to the runner 44 . Therefore, in FIGS. 2A, 3A, and 4A, the upper side is the high temperature side of the temperature gradient, and the lower side is the low temperature side of the temperature gradient.
The runner 26 for supplying the molten metal to the metal base plate forming portion 23 is a separate path from the runner 44 for supplying the molten metal to the metal plate forming portion 22 for the circuit. Molten metal is supplied to the runner 26 from the .
 図5A、図5Bに、上記図1に示した金属-セラミックス接合基板1の鋳造製品を作製するための鋳型構成部材である、下型と組み合わせて使用する上型200の構造(平面図)を模式的に例示する。図5Aは下面図(下型に被せる側)、図5Bは上面図(下型に被せた際に上になる側)である。上型200は、鋳型に供給された金属溶湯を受け入れる溶湯貯留部201を有する。 5A and 5B show the structure (plan view) of an upper mold 200 used in combination with the lower mold, which is a mold component for producing a cast product of the metal-ceramic bonding substrate 1 shown in FIG. Schematically exemplified. FIG. 5A is a bottom view (the side covered with the lower mold), and FIG. 5B is a top view (the side that faces up when the lower mold is covered). The upper mold 200 has a molten metal reservoir 201 that receives the molten metal supplied to the mold.
 溶湯貯留部201は上型200の胴体を貫通する空間からなり、鋳造時には上型200の上部開口部(溶湯貯留部201の)である給湯口204から金属溶湯が導入されることになる。図5Aに示す上型200の下面の表面には、金属ベース板12に対応する凹部である金属ベース板形成部202と、強化部材16を収容する凹部である強化部材収容部203が形成されている。なお、強化部材収容部203は、金属ベース板形成部202に隣接して、金属ベース板形成部202と一体的に形成されている。上型200の内部において、強化部材16が配置される部分を便宜上「強化部材収容部203」と表現する。また、溶湯が注入されて金属ベース板12を形成する部分を便宜上「金属ベース板形成部202」と表現する。 The molten metal reservoir 201 is formed by a space penetrating the body of the upper mold 200, and during casting, the molten metal is introduced from the upper opening of the upper mold 200 (of the molten metal reservoir 201) through a supply port 204. On the lower surface of the upper mold 200 shown in FIG. 5A, a metal base plate forming portion 202, which is a recess corresponding to the metal base plate 12, and a reinforcing member accommodating portion 203, which is a recess for accommodating the reinforcing member 16, are formed. there is The reinforcing member accommodating portion 203 is adjacent to the metal base plate forming portion 202 and formed integrally with the metal base plate forming portion 202 . A portion of the upper die 200 where the reinforcing member 16 is arranged is referred to as a "reinforcing member accommodating portion 203" for convenience. For convenience, the portion where the molten metal is injected to form the metal base plate 12 is referred to as "metal base plate forming portion 202".
 なお、それぞれの鋳型構成部材(下型100、上型200)の材質は、例えばガス透過性を有する炭素材料とすることが好ましい。 It should be noted that the material of each of the mold components (lower mold 100, upper mold 200) is preferably a carbon material having gas permeability, for example.
 図6A~図6Fに、上記図2に示した下型100と、図5に示した上型200とを組み合わせて構築した鋳型の断面構造を模式的に例示する。図6Aは図2AのA-A線で表示した位置の断面に相当し、図6Bは図2AのB-B線で表示した位置の断面に相当し、図6Cは図2AのC-C線で表示した位置の断面に相当し、図6Dは図2AのD-D線で表示した位置の断面に相当し、図6Eは図2AのE-E線で表示した位置の断面に相当し、図6Fは図2AのF-F線で表示した位置の断面に相当する。 6A to 6F schematically illustrate cross-sectional structures of molds constructed by combining the lower mold 100 shown in FIG. 2 and the upper mold 200 shown in FIG. 6A corresponds to the cross section indicated by the AA line in FIG. 2A, FIG. 6B corresponds to the cross section indicated by the BB line in FIG. 2A, and FIG. 6C is the CC line in FIG. 2A. corresponds to the cross section at the position indicated by , FIG. 6D corresponds to the cross section at the position indicated by the DD line in FIG. 2A, and FIG. 6E corresponds to the cross section at the position indicated by the EE line in FIG. FIG. 6F corresponds to a cross section at the position indicated by the FF line in FIG. 2A.
 次いで、前記鋳型を用いて溶湯接合法により金属-セラミックス接合基板1を作製する製造方法について説明する。
 まず、鋳型構成部材である下型100の外型40における中型収容部45に、中型20を収容する(図2A~図2Hの状態となる)。
 次いで中型20のセラミックス基板支持部21の上にセラミックス基板10を配置する。セラミックス基板10を配置することにより、セラミックス基板10の一方の面と中型20の表面との間の空間である金属板形成部22が画定される。なお、セラミックス基板支持部21は後に金属溶湯を注湯した際に、セラミックス基板10が金属溶湯により所定の位置からずれないように、位置決めの役割および位置ずれ防止の役割もなしている。
Next, a manufacturing method for manufacturing the metal-ceramic bonded substrate 1 by a molten metal bonding method using the mold will be described.
First, the middle mold 20 is housed in the middle mold housing portion 45 of the outer mold 40 of the lower mold 100, which is a mold component (the states shown in FIGS. 2A to 2H).
Next, the ceramic substrate 10 is placed on the ceramic substrate supporting portion 21 of the medium mold 20 . By arranging the ceramic substrate 10, a metal plate forming portion 22, which is a space between one surface of the ceramic substrate 10 and the surface of the medium mold 20, is defined. The ceramic substrate supporting portion 21 also plays a role of positioning and preventing displacement so that the ceramic substrate 10 is not displaced from a predetermined position by the molten metal when the molten metal is poured later.
 中型20の強化部材収容部24には強化部材16を配置する。強化部材16は板状であり、予めねじ止め用の貫通孔18が形成されており、中型20の凸部25は強化部材16の貫通孔18に対応する位置および嵌め込める適当な大きさとなっており、凸部25に強化部材16の貫通孔18を嵌め込むことにより、強化部材16を強化部材収容部24の所定の位置に配置することができる。
 このように中型20に両者を配置することで、セラミックス基板10と強化部材16は互いに離間した位置となる。
 なお、下型100の断面図である図2B~図2D、図2F~図2Hには便宜上、セラミックス基板10を配置した状態を示している。
A reinforcing member 16 is arranged in the reinforcing member accommodating portion 24 of the middle mold 20 . The reinforcing member 16 is plate-shaped, and through holes 18 for screwing are formed in advance, and the projections 25 of the middle die 20 are positioned corresponding to the through holes 18 of the reinforcing member 16 and have an appropriate size for fitting. By fitting the through hole 18 of the reinforcing member 16 into the convex portion 25 , the reinforcing member 16 can be arranged at a predetermined position in the reinforcing member accommodating portion 24 .
By arranging both on the medium mold 20 in this way, the ceramic substrate 10 and the reinforcing member 16 are positioned apart from each other.
2B to 2D and 2F to 2H, which are cross-sectional views of the lower mold 100, show the state in which the ceramic substrate 10 is arranged for the sake of convenience.
 次いで、上型200を下型100に載せることにより、図6A~図6Fに示すように、上型200と下型100との間に空間が形成され、金属ベース板形成部202と金属ベース板形成部23(により金属ベース板12の形状)、強化部材収容部203と強化部材収容部24が画定される。なお、強化部材収容部203と強化部材収容部24は一体の空間となる。同様に、金属ベース板形成部202と金属ベース板形成部23は一体の空間となる。 Next, by placing the upper mold 200 on the lower mold 100, as shown in FIGS. 6A to 6F, a space is formed between the upper mold 200 and the lower mold 100, and the metal base plate forming part 202 and the metal base plate Forming portion 23 (and thus the shape of metal base plate 12), reinforcing member accommodating portion 203 and reinforcing member accommodating portion 24 are defined. Note that the reinforcing member accommodating portion 203 and the reinforcing member accommodating portion 24 form an integrated space. Similarly, the metal base plate forming portion 202 and the metal base plate forming portion 23 form an integrated space.
 次いで、鋳型を(図示しない)加熱炉に挿入し、窒素ガスなどの非酸化性ガス雰囲気中で加熱しておき、(図示しない)溶解炉で溶融させた金属材料の溶湯を給湯口204から溶湯貯留部201に導入する。その際、注湯される金属溶湯は、溶湯表面の酸化皮膜が除去された状態のものであることが望ましい。 Next, the mold is inserted into a heating furnace (not shown) and heated in a non-oxidizing gas atmosphere such as nitrogen gas, and the molten metal material melted in the melting furnace (not shown) is supplied from the molten metal supply port 204. It is introduced into the reservoir 201 . At that time, it is desirable that the molten metal to be poured is in a state in which the oxide film on the surface of the molten metal has been removed.
 例えば、溶解炉から供給される溶湯に対して酸化皮膜除去処理を行いながら注湯するのが好ましい。前記の酸化皮膜除去処理としては、アルミニウム系の金属溶湯の場合であれば、例えば極小ノズルを通過させることにより、溶湯表面の酸化皮膜を除去しながら注湯する手法が有効である。 For example, it is preferable to pour the molten metal supplied from the melting furnace while removing the oxide film. As the oxide film removal treatment, in the case of an aluminum-based molten metal, it is effective to pour the molten metal while removing the oxide film on the surface of the molten metal by passing the molten metal through, for example, a very small nozzle.
 鋳型内の溶湯貯留部201にたまった金属溶湯を、上型200と下型100を組み合わせることで形成される溶湯流入口42から湯道26へ、および溶湯流入口43から湯道44へと送給し、鋳型内の空間の金属ベース板形成部202および金属ベース板形成部23、金属板形成部22に溶湯をそれぞれ充填させる。
 給湯口204から溶湯貯留部201に導入された金属材料の溶湯の一部は、溶湯流入口42から湯道26へ送給され、金属ベース板形成部202および金属ベース板形成部23に充填される。また、給湯口204から溶湯貯留部201に導入された金属材料の溶湯の残りの一部は、溶湯流入口43から湯道44へと送給され、注湯孔27を通って各金属板形成部22に充填される。
The molten metal accumulated in the molten metal reservoir 201 in the mold is sent from the molten metal inlet 42 formed by combining the upper mold 200 and the lower mold 100 to the runner 26, and from the molten metal inlet 43 to the runner 44. The metal base plate forming portion 202, the metal base plate forming portion 23, and the metal plate forming portion 22 in the space within the mold are each filled with the molten metal.
A portion of the molten metal material introduced into the molten metal storage portion 201 from the molten metal inlet 204 is fed from the molten metal inlet 42 to the runner 26 and filled in the metal base plate forming portion 202 and the metal base plate forming portion 23 . be. Further, the remaining part of the molten metal material introduced into the molten metal reservoir 201 from the molten metal supply port 204 is fed from the molten metal inlet 43 to the runner 44 and passes through the pouring hole 27 to form each metal plate. Part 22 is filled.
 鋳型内に金属溶湯を充填(給湯)した後、低温側端部の鋳型外壁(例えば図6D~図6Fの下端)に冷却装置として例えば水冷の銅ブロックを接触させるなどの方法で、鋳型の低温側から強制的に抜熱することにより、金属溶湯を指向性凝固させることが望ましい。引け巣などの鋳造欠陥を防止するために、給湯口204から窒素ガスなどの不活性ガスにより、例えば5~200kPaの圧力で加圧しながら湯道26を経て金属ベース板形成部202および金属ベース板形成部23、および湯道44を経て注湯孔27から金属板形成部22に溶湯送給を行い、加圧しながら凝固を進行させることが望ましい。 After filling (supplying) the molten metal in the mold, the low temperature of the mold is reduced by a method such as contacting a water-cooled copper block as a cooling device to the mold outer wall at the low temperature side end (for example, the lower end in FIGS. 6D to 6F). It is desirable to directionally solidify the molten metal by forcibly extracting heat from the side. In order to prevent casting defects such as shrinkage cavities, the metal base plate forming portion 202 and the metal base plate are passed through the runner 26 while being pressurized with an inert gas such as nitrogen gas from the hot water supply port 204 at a pressure of, for example, 5 to 200 kPa. It is desirable to feed the molten metal from the pouring hole 27 to the metal plate forming portion 22 via the forming portion 23 and the runner 44, and solidify while applying pressure.
 このようにして鋳型内のセラミックス基板10の両面に接触するとともに強化部材16の側面に接触するように金属の溶湯を注湯した後に冷却して固化させることにより、セラミックス基板10の側面および他方の面(裏面)の全面に接合した平面形状が略矩形の金属ベース板12を直接接合するとともに、セラミックス基板10の一方の面に直接接合した1以上の(図示した実施の形態では3つ)の回路パターン用の金属板14を直接接合するとともに、強化部材16の側面(内側面)を金属ベース板12の側面に接合する。 In this way, the molten metal is poured into the mold so as to be in contact with both sides of the ceramic substrate 10 and the side surface of the reinforcing member 16, and then cooled and solidified, whereby the side surface and the other side of the ceramic substrate 10 are solidified. A metal base plate 12 having a substantially rectangular planar shape that is bonded to the entire surface (back surface) is directly bonded, and at least one (three in the illustrated embodiment) that is directly bonded to one surface of the ceramic substrate 10. The circuit pattern metal plate 14 is directly joined, and the side surface (inner side surface) of the reinforcing member 16 is joined to the side surface of the metal base plate 12 .
 前記金属ベース板12がアルミニウムまたはアルミニウム合金からなることが好ましく、すなわちアルミニウムまたはアルミニウム合金からなる金属の溶湯を鋳型内に注湯することが好ましい。また、金属板14がアルミニウムまたはアルミニウム合金からなることが好ましく、すなわちアルミニウムまたはアルミニウム合金からなる金属の溶湯を鋳型内に注湯することが好ましい。 It is preferable that the metal base plate 12 is made of aluminum or an aluminum alloy, that is, it is preferable to pour a molten metal made of aluminum or an aluminum alloy into the mold. Moreover, it is preferable that the metal plate 14 is made of aluminum or an aluminum alloy, that is, it is preferable to pour a molten metal made of aluminum or an aluminum alloy into the mold.
 回路用の金属板14は半導体素子などのチップ部品が搭載されるため、電気伝導性、熱伝導性に優れた金属が好ましく、アルミニウムの場合は99.7質量%以上、さらに好ましくは99.9質量%以上のアルミニウムを含むアルミニウムまたはアルミニウム合金の金属溶湯を注湯することが好ましい。 Since chip parts such as semiconductor elements are mounted on the metal plate 14 for the circuit, a metal having excellent electrical conductivity and thermal conductivity is preferable. It is preferable to pour molten metal of aluminum or aluminum alloy containing more than mass % of aluminum.
 また、金属ベース板12は熱伝導性とともに構成部材としてある程度の硬さ(強度)を有することが望ましいので、回路用の金属板14より硬さが大きいことが好ましい。すなわち、金属ベース板12に用いる金属の溶湯と、金属板14に用いる金属の溶湯の組成を変えて、金属ベース板12の硬さが金属板14の硬さよりも大きくなるように、鋳型中に別々に設けられた湯道より注湯してもよい。
 なお、金属ベース板12と金属板14のアルミニウムまたはアルミニウム合金の組成を異なるものとする場合は、給湯口204および溶湯貯留部201も別々に設けて(図示しない)注湯してもよい。
Moreover, since it is desirable that the metal base plate 12 has thermal conductivity and a certain degree of hardness (strength) as a constituent member, it is preferable that the metal plate 14 has a higher hardness than the circuit metal plate 14 . That is, by changing the compositions of the molten metal used for the metal base plate 12 and the molten metal used for the metal plate 14, the hardness of the metal base plate 12 is greater than the hardness of the metal plate 14. You may pour hot water from the runner provided separately.
When metal base plate 12 and metal plate 14 have different aluminum or aluminum alloy compositions, metal supply port 204 and molten metal reservoir 201 may be separately provided (not shown) for pouring.
 また、炭素鋼またはステンレスからなる強化部材16と金属ベース板12の接合が強固となるように、強化部材16と金属ベース板12の接合界面に、たとえばFeとAlの合金からなる接合層を形成するのが好ましい。
 なお、FeはAl中に拡散して電気伝導性を低下させるため、金属ベース板12へ金属溶湯を送給する湯道26と、回路パターン用の金属板14に金属溶湯を送給する湯道44は別々に設けることが好ましい。
 一方、Al中に拡散したFeはFeAlなどの化合物を形成して金属ベース板12の硬度を増加させ、金属ベース板として適当な硬度(強度)を得ることができる。
In addition, a bonding layer made of, for example, an alloy of Fe and Al is formed at the bonding interface between the reinforcing member 16 made of carbon steel or stainless steel and the metal base plate 12 so that the bonding between the reinforcing member 16 and the metal base plate 12 becomes strong. preferably.
Since Fe diffuses into Al to reduce electrical conductivity, runners 26 for feeding the molten metal to the metal base plate 12 and runners for feeding the molten metal to the metal plate 14 for the circuit pattern are provided. 44 is preferably provided separately.
On the other hand, Fe diffused into Al forms a compound such as FeAl 3 to increase the hardness of the metal base plate 12, thereby obtaining appropriate hardness (strength) for the metal base plate.
 上記のようにして得られた金属-セラミックス接合体を、上型200を取り外し鋳型を解体して取り出す。金属-セラミックス接合体である鋳造製品は、金属ベース板12に繋がる湯道26の凝固部分を切断除去し、注湯孔27の部分に残った金属板14の表面の突起部などを研磨で手入れすること等により、所定形状の金属-セラミックス接合基板1とすることができる。 The metal-ceramic bonded body obtained as described above is taken out by removing the upper mold 200 and dismantling the mold. For the cast product, which is a metal-ceramic bonded body, the solidified portion of the runner 26 connected to the metal base plate 12 is cut and removed, and the protrusions on the surface of the metal plate 14 remaining in the pouring hole 27 are polished. The metal-ceramic bonding substrate 1 having a predetermined shape can be obtained by, for example, forming the substrates.
(第2の実施の形態)
 図7A~図7Eに他の実施の形態の金属-セラミックス接合基板2の模式図を示す。図2において鋳型の強化部材収容部24の表面に突起を設け、さらには強化部材16を強化部材収容部24および強化部材収容部203に収容する際、中型20と強化部材16との間および上型200と強化部材16に隙間を空けておき、金属の溶湯を注湯する際に、強化部材16の主面(板面)および接合面以外の側面(外側面)にも金属溶湯が接触するようにして、強化部材16の主面および側面にアルミニウムまたはアルミニウム合金30を接合してもよい。なお、凸部25の直径を小さくして強化部材16の貫通孔18との間に隙間を設けておき金属溶湯を注湯することにより、貫通孔18の表面(内面)にもアルミニウムまたはアルミニウム合金を形成してもよい。
(Second embodiment)
7A to 7E show schematic diagrams of a metal-ceramic bonding substrate 2 of another embodiment. In FIG. 2, projections are provided on the surface of the reinforcing member accommodating portion 24 of the mold. A gap is left between the mold 200 and the reinforcing member 16, and when the molten metal is poured, the molten metal also contacts the main surface (plate surface) and the side surface (outer surface) of the reinforcing member 16 other than the joint surface. In this manner, aluminum or aluminum alloy 30 may be bonded to the main and side surfaces of reinforcing member 16 . By reducing the diameter of the convex portion 25 and providing a gap between it and the through-hole 18 of the reinforcing member 16 and pouring the molten metal, the surface (inner surface) of the through-hole 18 can also be made of aluminum or an aluminum alloy. may be formed.
 強化部材16が炭素鋼であり金属ベース板12がアルミニウムまたはアルミニウム合金である場合は、パワーモジュールなどの半導体装置に金属-セラミック基板を組み込み使用したときに、強化部材16が腐食(ガルバニック腐食)する可能性があるので、強化部材16の全面(主面および金属ベース板12が接合されていない側面、さらには貫通孔18の内面)をアルミニウムまたはアルミニウム合金30で覆う、すなわち強化部材16の表面にアルミニウムまたはアルミニウム合金30を接合(形成)することが好ましい。 If the reinforcing member 16 is made of carbon steel and the metal base plate 12 is made of aluminum or an aluminum alloy, the reinforcing member 16 will corrode (galvanic corrosion) when the metal-ceramic substrate is incorporated in a semiconductor device such as a power module. Since there is a possibility, the entire surface of the reinforcing member 16 (the main surface, the side surface to which the metal base plate 12 is not bonded, and the inner surface of the through hole 18) is covered with aluminum or aluminum alloy 30, that is, the surface of the reinforcing member 16 is covered with aluminum or aluminum alloy 30. Preferably, aluminum or aluminum alloy 30 is bonded (formed).
(第3の実施の形態)
 他の実施の形態として、図8A~図8Eに示すように、金属ベース板12は、セラミックス基板10の側面に接合せず、他方の面の全面に直接接合した金属-セラミックス接合基板3としてもよい。鋳型の形状を図8の金属-セラミックス接合基板の金属ベース板12の形状が形成されるように変更することなどにより、製造することができる。
(Third Embodiment)
As another embodiment, as shown in FIGS. 8A to 8E, a metal-ceramic bonding substrate 3 in which the metal base plate 12 is not bonded to the side surface of the ceramic substrate 10 but is directly bonded to the entire other surface of the ceramic substrate 10 can be used. good. It can be manufactured by changing the shape of the mold so that the shape of the metal base plate 12 of the metal-ceramic bonding substrate of FIG. 8 is formed.
(第4の実施の形態)
 他の実施の形態として、図9A~図9Eに示すように、金属ベース板12の周囲を囲むように強化部材16を接合した金属-セラミックス接合基板4としてもよい。強化部材16の形状を変更し、鋳型の形状を図9の金属-セラミックス接合基板の強化部材16が収容できるように強化部材収容部203、強化部材収容部24の形状を変更することなどにより、製造することができる。
(Fourth embodiment)
As another embodiment, as shown in FIGS. 9A to 9E, a metal-ceramic bonding substrate 4 may be used in which a reinforcing member 16 is bonded so as to surround a metal base plate 12. FIG. By changing the shape of the reinforcing member 16 and changing the shape of the reinforcing member accommodating portion 203 and the reinforcing member accommodating portion 24 so that the reinforcing member 16 of the metal-ceramic bonding substrate shown in FIG. 9 can be accommodated in the mold, can be manufactured.
 以上、本発明の実施の形態の例を説明したが、これに限らず本発明の主旨に沿うものは本発明に含まれる。例えば、アルミニウムベース板の裏面(セラミックス基板が接合していない面)に、放熱用のピンやフィンが当該アルミニウムベース板と一体に形成されていてもよい。前記アルミニウムベース板と一体に形成された放熱用のピンやフィンは、内部に当該ピンやフィンの形状と略同一の空間を設けた鋳型を準備した後、鋳型にアルミニウム合金を注湯することにより作製することができる。 Although the examples of the embodiments of the present invention have been described above, the present invention is not limited to this, and includes those in line with the gist of the present invention. For example, heat radiation pins or fins may be formed integrally with the aluminum base plate on the rear surface of the aluminum base plate (the surface to which the ceramic substrate is not bonded). The pins and fins for heat radiation integrally formed with the aluminum base plate are prepared by preparing a mold having a space substantially the same as the shape of the pins and fins inside, and then pouring an aluminum alloy into the mold. can be made.
 以下、本発明による金属-セラミックス接合基板およびその製造方法の実施例について詳細に説明する。 Hereinafter, examples of the metal-ceramic bonding substrate and the manufacturing method thereof according to the present invention will be described in detail.
(実施例1)
 セラミックス基板10として、長さ70mm×幅65mm×厚さ0.6mmの略矩形の窒化アルミニウム基板(AlN基板)を用意するとともに、強化部材16として、長さ10mm×幅80mm×厚さ2mmの略矩形の(材料として引張強度が270MPa以上の)SPCC(普通鋼)製の板材を用意した。強化部材16には幅方向両端部から8mm、長さ方向5mmの位置に、直径6mmの板面を垂直に貫通した貫通孔18が形成されている。なお、便宜上、図2Aにおいて横方向を長さ方向、縦方向を幅方向と表す。
 次いで、図2に示す鋳型構成部材と同様の下型(鋳型)100の中型20のセラミックス基板支持部21にセラミックス基板10を配置するとともに、下型100の強化部材収容部24の凸部25に強化部材16の貫通孔18を嵌め合わせ、強化部材16を強化部材収容部24に収容した。
 次いで、図6に示されるように上型200を下型100に被せた。鋳型内を窒素雰囲気にした状態で加熱し、純アルミニウム(99.9質量%以上のAlを含有)の溶湯をその表面の酸化膜を取り除きながら鋳型内に注湯し、その後、鋳型を冷却して溶湯を凝固させることによって、セラミックス基板10の他方の面の全面に(外形が長さ80mm×幅80mmの)金属ベース板12が一体に形成されるとともに、セラミックス基板10の一方の面に3枚の回路パターン用のアルミニウムからなる金属板14が形成され、金属ベース板12の両側面に強化部材16が直接接合した金属-セラミックス接合体を作製した。
 このとき、セラミックス基板10の他方の面に接合した金属ベース板の厚さを0.47mmとし、セラミックス基板10の外周部の幅0.2mmの領域(図面上の凹部、鋳造時に鋳型のセラミックス基板支持部の先端であった部位)の金属ベース板の厚さを0.77mmとし、それ以外の領域(強化部材と接合している部分など)の金属ベース板の厚さを2mmとした。また、セラミックス基板の一方の面に接合した回路パターン用の金属板の厚さを0.93mmとした。
 なお、金属ベース板の引張強度は80MPa程度、熱伝導率は237W/mK、金属板の導電率は62%IACSである。なお、金属ベース板の引張強度は、金属ベース板を切断したものを測定用試験片として用いる。
 次いで、鋳型から金属-セラミックス接合体を取り出した後、湯道26に対応して形成されたアルミニウムの部分を切断し、回路パターン用の金属板14の表面を研磨して金属-セラミックス接合基板1を作製した。
(Example 1)
A substantially rectangular aluminum nitride substrate (AlN substrate) having a length of 70 mm, a width of 65 mm, and a thickness of 0.6 mm was prepared as the ceramic substrate 10, and a substantially rectangular substrate having a length of 10 mm, a width of 80 mm, and a thickness of 2 mm was prepared as the reinforcing member 16. A rectangular SPCC (ordinary steel) plate material (having a tensile strength of 270 MPa or more as a material) was prepared. The reinforcing member 16 has a through hole 18 having a diameter of 6 mm and vertically penetrating the plate surface at a position 8 mm from both ends in the width direction and 5 mm in the length direction. For convenience, in FIG. 2A, the horizontal direction is represented as the length direction, and the vertical direction as the width direction.
Next, the ceramic substrate 10 is placed on the ceramic substrate supporting portion 21 of the middle mold 20 of the lower mold (mold) 100 similar to the mold component shown in FIG. The through hole 18 of the reinforcing member 16 was fitted, and the reinforcing member 16 was accommodated in the reinforcing member accommodating portion 24 .
Then, the upper mold 200 was placed over the lower mold 100 as shown in FIG. The inside of the mold is heated in a nitrogen atmosphere, and molten pure aluminum (containing 99.9% by mass or more of Al) is poured into the mold while removing the oxide film on the surface, and then the mold is cooled. By solidifying the molten metal, a metal base plate 12 (having an outer shape of 80 mm in length and 80 mm in width) is integrally formed on the other surface of the ceramics substrate 10, and 3 is formed on one surface of the ceramics substrate 10. A metal plate 14 made of aluminum for a circuit pattern was formed, and a metal-ceramic bonded body was produced in which reinforcing members 16 were directly bonded to both side surfaces of a metal base plate 12 .
At this time, the thickness of the metal base plate bonded to the other surface of the ceramic substrate 10 was set to 0.47 mm, and the area of the outer peripheral portion of the ceramic substrate 10 with a width of 0.2 mm (the recess on the drawing, the ceramic substrate of the mold at the time of casting) The thickness of the metal base plate in the portion that was the tip of the support portion) was set to 0.77 mm, and the thickness of the metal base plate in other regions (the portion joined to the reinforcing member, etc.) was set to 2 mm. Also, the thickness of the metal plate for the circuit pattern bonded to one surface of the ceramic substrate was set to 0.93 mm.
The tensile strength of the metal base plate is about 80 MPa, the thermal conductivity is 237 W/mK, and the electrical conductivity of the metal plate is 62% IACS. For the tensile strength of the metal base plate, a cut metal base plate is used as a test piece for measurement.
Next, after taking out the metal-ceramic bonded body from the mold, the aluminum portion formed corresponding to the runner 26 is cut, and the surface of the circuit pattern metal plate 14 is polished to obtain the metal-ceramic bonded substrate 1. was made.
(実施例2)
 強化部材16の厚さを3mmとし、セラミックス基板10の他方の面に接合した金属ベース板12の厚さを0.8mmとし、セラミックス基板10の外周部の幅0.2mmの領域(図面上の凹部)の金属ベース板の厚さを1.1mmとし、それ以外の領域(強化部材と接合している部分など)の金属ベース板の厚さを3mmとした。また、セラミックス基板の一方の面に接合した回路パターン用の金属板14の厚さを1.6mmとした以外は実施例1と同様の方法で金属-セラミックス接合基板を作製した。
(Example 2)
The thickness of the reinforcing member 16 is set to 3 mm, the thickness of the metal base plate 12 bonded to the other surface of the ceramic substrate 10 is set to 0.8 mm, and the outer peripheral portion of the ceramic substrate 10 has a width of 0.2 mm ( The thickness of the metal base plate in the concave portion) was set to 1.1 mm, and the thickness of the metal base plate in other regions (the portion joined to the reinforcing member, etc.) was set to 3 mm. A metal-ceramic bonded substrate was produced in the same manner as in Example 1, except that the thickness of the circuit pattern metal plate 14 bonded to one surface of the ceramic substrate was 1.6 mm.
(実施例3)
 強化部材16の厚さを4mmとし、セラミックス基板10の他方の面に接合した金属ベース板12の厚さを1.1mmとし、セラミックス基板10の外周部の幅0.2mmの領域(図面上の凹部)の金属ベース板の厚さを1.45mmとし、それ以外の領域(強化部材と接合している部分など)の金属ベース板の厚さを4mmとした。また、セラミックス基板の一方の面に接合した回路パターン用の金属板14の厚さを2.3mmとした以外は実施例1と同様の方法で金属-セラミックス接合基板を作製した。
(Example 3)
The thickness of the reinforcing member 16 is set to 4 mm, the thickness of the metal base plate 12 bonded to the other surface of the ceramic substrate 10 is set to 1.1 mm, and the outer peripheral portion of the ceramic substrate 10 has a width of 0.2 mm ( The thickness of the metal base plate in the concave portion) was set to 1.45 mm, and the thickness of the metal base plate in other regions (the portion joined to the reinforcing member, etc.) was set to 4 mm. A metal-ceramic bonded substrate was produced in the same manner as in Example 1, except that the thickness of the circuit pattern metal plate 14 bonded to one surface of the ceramic substrate was 2.3 mm.
(実施例4)
 強化部材16の材質を(引張強度が570MPa以上の)S45C(機械構造用炭素鋼)とした以外は実施例2と同様の方法で金属-セラミックス接合基板を作製した。
(Example 4)
A metal-ceramic bonding substrate was produced in the same manner as in Example 2, except that the reinforcing member 16 was made of S45C (carbon steel for machine structural use, which has a tensile strength of 570 MPa or more).
(実施例5)
 強化部材16の材質を(引張強度が400MPa以上の)SS400(一般構造用圧延鋼材)とした以外は実施例2と同様の方法で金属-セラミックス接合基板を作製した。
(Example 5)
A metal-ceramic bonding substrate was produced in the same manner as in Example 2, except that the reinforcing member 16 was made of SS400 (general structural rolled steel having a tensile strength of 400 MPa or more).
(実施例6)
 強化部材16の材質を(引張強度が520MPa以上の)SUS303(ステンレス)とした以外は実施例2と同様の方法で金属-セラミックス接合基板を作製した。
(Example 6)
A metal-ceramic bonding substrate was produced in the same manner as in Example 2, except that the reinforcing member 16 was made of SUS303 (stainless steel) (having a tensile strength of 520 MPa or more).
(実施例7)
 強化部材16の材質を(引張強度が520MPa以上の)SUS304(ステンレス)とした以外は実施例2と同様の方法で金属-セラミックス接合基板を作製した。
(Example 7)
A metal-ceramic bonding substrate was produced in the same manner as in Example 2, except that the reinforcing member 16 was made of SUS304 (stainless steel) (having a tensile strength of 520 MPa or more).
(実施例8)
 強化部材16の材質を(引張強度が520MPa以上の)SUS316(ステンレス)とした以外は実施例2と同様の方法で金属-セラミックス接合基板を作製した。
(Example 8)
A metal-ceramic bonding substrate was produced in the same manner as in Example 2, except that the reinforcing member 16 was made of SUS316 (stainless steel) (having a tensile strength of 520 MPa or more).
(実施例9)
 強化部材16を前記金属ベース板12の外周を10mm幅で取り囲む(口状の)形状とした以外は実施例2と同様の方法で図9に示すような形状の金属-セラミックス接合基板を作製した。
(Example 9)
A metal-ceramic bonding substrate having a shape as shown in FIG. .
(実施例10)
 長さ10mm×幅80mm×厚さ2.4mmの略矩形の強化部材16を用意し、強化部材収容部24に直径1mm、高さ0.3mmの突起部を3ヵ所設けて強化部材16の一方の主面(板面)を中型20の表面(底面)および側面から0.3mm離間させて支持し、強化部材16の他方の主面(板面)と外型40との隙間を0.3mm設けた以外は実施例2と同様の方法で、図7に相当する強化部材16の一方の主面、他方の主面および側面に厚さ0.3mmのアルミニウムが形成(接合)された(に覆われた)金属-セラミックス接合基板を作製した。
(Example 10)
A substantially rectangular reinforcing member 16 having a length of 10 mm, a width of 80 mm, and a thickness of 2.4 mm was prepared, and three protrusions each having a diameter of 1 mm and a height of 0.3 mm were provided in the reinforcing member accommodating portion 24, and one side of the reinforcing member 16 was The main surface (plate surface) of the middle mold 20 is separated from the surface (bottom surface) and the side surface by 0.3 mm, and the gap between the other main surface (plate surface) of the reinforcing member 16 and the outer mold 40 is 0.3 mm Aluminum having a thickness of 0.3 mm was formed (joined) on one main surface, the other main surface and the side surface of the reinforcing member 16 corresponding to FIG. A metal-ceramic bonded substrate was fabricated.
(実施例11)
 長さ10mm×幅80mm×厚さ2.6mmの略矩形の強化部材16を用意し、強化部材収容部24に直径1mm、高さ0.2mmの突起部を3ヵ所設けて強化部材16の一方の主面(板面)を中型20の表面(底面)および側面から0.2mm離間させて支持し、強化部材16の他方の主面(板面)と外型40との隙間を0.2mm設けた以外は実施例2と同様の方法で、図7に相当する強化部材16の一方の主面、他方の主面および側面に厚さ0.2mmのアルミニウムが形成(接合)された(に覆われた)金属-セラミックス接合基板を作製した。
(Example 11)
A substantially rectangular reinforcing member 16 having a length of 10 mm, a width of 80 mm, and a thickness of 2.6 mm was prepared, and three protrusions each having a diameter of 1 mm and a height of 0.2 mm were provided in the reinforcing member accommodating portion 24, and one side of the reinforcing member 16 was The main surface (plate surface) of the middle mold 20 is separated from the surface (bottom surface) and the side surface by 0.2 mm, and the gap between the other main surface (plate surface) of the reinforcing member 16 and the outer mold 40 is 0.2 mm Aluminum having a thickness of 0.2 mm was formed (joined) on one main surface, the other main surface and the side surface of the reinforcing member 16 corresponding to FIG. A metal-ceramic bonded substrate was fabricated.
(実施例12)
 長さ10mm×幅80mm×厚さ2.0mmの略矩形の強化部材16を用意し、強化部材収容部24に直径1mm、高さ0.5mmの突起部を3ヵ所設けて強化部材16の一方の主面(板面)を中型20の表面(底面)および側面から0.5mm離間させて支持し、強化部材16の他方の主面(板面)と外型40との隙間を0.5mm設けた以外は実施例2と同様の方法で、図7に相当する強化部材16の一方の主面、他方の主面および側面に厚さ0.5mmのアルミニウムが形成(接合)された(に覆われた)金属-セラミックス接合基板を作製した。
(Example 12)
A substantially rectangular reinforcing member 16 having a length of 10 mm, a width of 80 mm, and a thickness of 2.0 mm was prepared, and three protrusions each having a diameter of 1 mm and a height of 0.5 mm were provided in the reinforcing member accommodating portion 24, and one side of the reinforcing member 16 was The main surface (plate surface) of the middle mold 20 is supported with a distance of 0.5 mm from the surface (bottom surface) and the side surface of the middle mold 20, and the gap between the other main surface (plate surface) of the reinforcing member 16 and the outer mold 40 is 0.5 mm Aluminum having a thickness of 0.5 mm was formed (joined) on one main surface, the other main surface and the side surface of the reinforcing member 16 corresponding to FIG. A metal-ceramic bonded substrate was fabricated.
(実施例13)
 強化部材16を厚さ2.4mmとし前記金属ベース板12の外周を10mm幅で取り囲む(口状の)形状とし、強化部材収容部24に直径1mm、高さ0.3mmの突起部を3ヵ所設けて強化部材16の一方の主面(板面)を中型20の表面(底面)および側面から0.3mm離間させて支持し、強化部材16の他方の主面(板面)と外型40との隙間を0.3mm設けた以外は実施例2と同様の方法で、図9に相当する強化部材16の一方の主面、他方の主面および側面に厚さ0.3mmのアルミニウムが形成(接合)された(に覆われた)金属-セラミックス接合基板を作製した。
(Example 13)
The reinforcing member 16 has a thickness of 2.4 mm and has a (mouth-like) shape surrounding the outer circumference of the metal base plate 12 with a width of 10 mm. and supports one main surface (plate surface) of the reinforcing member 16 with a distance of 0.3 mm from the surface (bottom surface) and the side surface of the middle mold 20, and the other main surface (plate surface) of the reinforcing member 16 and the outer mold 40 Aluminum with a thickness of 0.3 mm is formed on one main surface, the other main surface and the side surface of the reinforcing member 16 corresponding to FIG. A (bonded) (covered) metal-ceramic bonded substrate was produced.
(比較例1)
 強化部材16を鋳型に配置せず、強化部材収容部24にも純アルミニウムの溶湯を注湯して凝固させた以外は実施例2と同様の方法で金属-セラミックス接合基板を作製した。
(Comparative example 1)
A metal-ceramic bonding substrate was produced in the same manner as in Example 2, except that the reinforcing member 16 was not placed in the mold, and pure aluminum molten metal was poured into the reinforcing member accommodating portion 24 and allowed to solidify.
(比較例2)
 アルミニウム-マグネシウム系合金A5052の溶湯を注湯して凝固させた以外は比較例2と同様の方法で金属-セラミックス接合基板を作製した。形成された金属-ベース板の引張強度は200MPa程度、熱伝導率は137W/(m/K)、導電率は35%IACSである。
(Comparative example 2)
A metal-ceramic bonding substrate was produced in the same manner as in Comparative Example 2, except that molten aluminum-magnesium alloy A5052 was poured and solidified. The formed metal-base plate has a tensile strength of about 200 MPa, a thermal conductivity of 137 W/(m/K), and an electrical conductivity of 35% IACS.
(比較例3)
 板状の強化部材16を鋳型に配置せず、代わりに凸部25を囲むSUS304のパイプ状の部材を配置した。パイプの肉厚は1mm、高さは3mmである。その後、アルミニウムの溶湯を注湯して凝固させた以外は実施例2と同様の方法で金属-セラミックス接合基板を作製した。
(Comparative Example 3)
The plate-shaped reinforcing member 16 was not arranged in the mold, and instead, a pipe-shaped member of SUS304 surrounding the convex portion 25 was arranged. The pipe has a wall thickness of 1 mm and a height of 3 mm. Thereafter, a metal-ceramic bonding substrate was produced in the same manner as in Example 2, except that molten aluminum was poured and solidified.
<評価および結果>
 実施例および比較例について、接合性、ねじ締結性、金属ベース板の反り、放熱性、導電性、耐腐食性について評価、比較した。
<Evaluation and results>
The examples and comparative examples were evaluated and compared with respect to bondability, screw fastening property, warpage of the metal base plate, heat dissipation, electrical conductivity, and corrosion resistance.
(接合性)
 金属-セラミックス接合基板の強化部材と金属ベース板(比較例3はパイプ状の部材と金属ベース板)の接合界面について、接合基板の断面を顕微鏡で観察し、接合界面における接合欠陥の有無、ならびに接合層(Fe-Alの合金層)の有無およびその厚さを確認した。
 その結果、実施例1~5、9~13、比較例1、2は接合界面に接合欠陥は認められず接合性に優れていた。実施例6~8は、強化部材とアルミニウムの金属ベース板の接合界面に微小なボイドが見られたものの十分な接合強度を有し、使用に支障がない状態であった。比較例3はパイプ状の部材と金属ベース板の接合界面にボイドが多く観察され、接合不良と判断された。
 実施例2、4、5、9~13の接合界面を観察したところ、FeとAlからなる接合層(合金層)が確認された。実施例2、9~13の接合層の厚さは約150μm、実施例4の接合層の厚さは約50μm、実施例5の接合層の厚さは約100μmであった。
 なお、実施例10~13は強化部材の主面(板面)および側面にアルミニウムが形成(接合)されているが、主面および側面のアルミニウムと強化部材の間に接合層が形成され、締結部などの表面のアルミニウムの強度(硬さ)が向上しているのが確認された。
(bondability)
Regarding the bonding interface between the reinforcing member of the metal-ceramic bonding substrate and the metal base plate (the pipe-shaped member and the metal base plate in Comparative Example 3), the cross section of the bonding substrate was observed with a microscope to determine the presence or absence of bonding defects at the bonding interface. The presence or absence of a bonding layer (Fe—Al alloy layer) and its thickness were confirmed.
As a result, in Examples 1 to 5, 9 to 13 and Comparative Examples 1 and 2, no bonding defect was observed at the bonding interface and the bonding was excellent. In Examples 6 to 8, although minute voids were observed at the bonding interface between the reinforcing member and the aluminum metal base plate, the bonding strength was sufficient and there was no problem in use. In Comparative Example 3, many voids were observed at the joint interface between the pipe-shaped member and the metal base plate, and it was determined that the joint was defective.
When the bonding interfaces of Examples 2, 4, 5, 9 to 13 were observed, a bonding layer (alloy layer) composed of Fe and Al was confirmed. The thickness of the bonding layer in Examples 2 and 9 to 13 was about 150 μm, the thickness of the bonding layer in Example 4 was about 50 μm, and the thickness of the bonding layer in Example 5 was about 100 μm.
In Examples 10 to 13, aluminum is formed (bonded) on the main surface (plate surface) and side surfaces of the reinforcing member, but a bonding layer is formed between the aluminum on the main surface and side surfaces and the reinforcing member, and the fastening is performed. It was confirmed that the strength (hardness) of aluminum on the surface of the part was improved.
(反り)
 セラミックス基板の主面に垂直な方向から平面視したときの、金属-セラミックス接合基板の中心部の回路パターン用の金属板の高さと、金属-セラミックス接合基板の外周端部の対角に位置する2か所(2点)のコーナー(角部)の金属ベース板(設計上は回路パターン用の金属板と同じ高さ)の高さを測定し、前記2点を通過する基準線と中心部の回路パターン用の金属板の高さの差を製品の反りとした。反りは中心部の高さが低い場合を正とし、(初期の)反りが-0.3~0.3mmの範囲のものが好ましい。
 その結果、反りは実施例1~13、比較例1、3はいずれも-0.1~0.1mmの範囲であり良好であった。比較例2は+0.5mm程度であった。
 また、金属-セラミックス接合基板を300℃に加熱した加熱後の前記反りを有限要素法によるシミュレーションにより計算した。初期の反りに対して加熱後の反りの変化量が0.15mm以下のものを優良品(◎)とし、0.15mmを超え0.20mm以下のものを良品(〇)とし、0.20mmを超え0.25mm以下のものを不具合品(△)とし、0.25mmを超えるものを不良品(×)とした。
 その結果、実施例1~8、10~12、比較例2は良品であり、実施例9、13は優良品であり、比較例1、3は不良品であった。
(warp)
Located diagonally between the height of the metal plate for the circuit pattern in the center of the metal-ceramic bonding substrate and the outer peripheral edge of the metal-ceramic bonding substrate when viewed from the direction perpendicular to the main surface of the ceramic substrate. Measure the height of the metal base plate (designed to be the same height as the metal plate for the circuit pattern) at two corners (two points), and measure the reference line passing through the two points and the center The warpage of the product was defined as the difference in the height of the metal plate for the circuit pattern. The warp is positive when the height of the central portion is low, and the (initial) warp is preferably in the range of -0.3 to 0.3 mm.
As a result, the warpage of Examples 1 to 13 and Comparative Examples 1 and 3 was in the range of −0.1 to 0.1 mm, which was good. Comparative Example 2 was about +0.5 mm.
Further, the warpage after heating the metal-ceramic bonded substrate to 300° C. was calculated by simulation using the finite element method. Those with a warp change of 0.15 mm or less after heating with respect to the initial warp are regarded as excellent products (◎), those exceeding 0.15 mm and 0.20 mm or less are regarded as good products (◯), and 0.20 mm is regarded as a good product. Those exceeding 0.25 mm or less were regarded as defective products (Δ), and those exceeding 0.25 mm were regarded as defective products (x).
As a result, Examples 1 to 8, 10 to 12 and Comparative Example 2 were good products, Examples 9 and 13 were good products, and Comparative Examples 1 and 3 were bad products.
(締結性)
 外形のサイズとして長さ100mm×幅80mm×高さ10mmであり枠の厚さが10mmであるステンレス製(SUS304)の枠状部材であって、さらに4隅の金属ベース板の貫通孔に対応する部分に、貫通孔が形成されたボルト締結部を備えた、水冷ジャケット(放熱部材)に相当する前記枠状部材を準備した。また、外形のサイズとして長さ100mm×幅80mm×高さ10mmであり枠の厚さが10mmであるポリエチレン製の枠状部材であって、さらに4隅の金属ベース板の貫通孔に対応する部分に、貫通孔が形成されたボルト締結部を備えた、半導体などを囲むケース部材(筐体)に相当する前記枠状部材を準備した。
 実施例2、実施例10、実施例11、実施例12および比較例1、2で得られたそれぞれの金属-セラミックス接合基板について、金属ベース板の裏面に前記水冷ジャケットに相当する枠状部材を配置し、金属ベース板の表面に前記ケース部材に相当する枠状部材を配置した後、これらの枠状部材の貫通孔および金属ベース板の前記貫通孔を介してボルトで締結した。
 これらの枠状部材がボルトで締結された、金属-セラミックス接合基板について、ヒートサイクル(1サイクルは-40℃×30分→25℃×10分→150℃×30分→25℃×10分)を500サイクル付加するヒートサイクル試験を行った。評価として、ヒートサイクル試験前(初期)とヒートサイクル後のボルトの締め付けトルクを測定(実測)した。ヒートサイクル後の締め付けトルクの低下が、ヒートサイクル前に比べて20%以下であるものを良好とした。また、500サイクル付加後の金属-セラミックス接合基板のセラミックス基板について、クラックの発生の有無について確認した。
 その結果、実施例2、10、11、12はいずれも初期の値に対してヒートサイクル500サイクルを付加した後も、80%以上の締め付けトルクを維持していた(トルクの低下が20%以下)。一方、比較例1は、初期の値に対してヒートサイクル500サイクルを付加した後は16%の締め付けトルクであった(トルクの低下が84%)。また、締結部に50~100μmの変形が確認された。
 また、実施例1~13および比較例1、3については、ヒートサイクル500サイクル後にセラミックス基板にクラックの発生は認められなかったが、比較例2はセラミックス基板にクラックが入り、金属-セラミックス接合基板として信頼性に劣っていた。
(Fixability)
A frame-shaped member made of stainless steel (SUS304) having an outer size of 100 mm long x 80 mm wide x 10 mm high and a frame thickness of 10 mm, and corresponding to the through holes of the metal base plate at the four corners. A frame-shaped member corresponding to a water-cooling jacket (radiating member) was prepared, which had a bolt fastening portion formed with a through-hole. A polyethylene frame member having an outer size of 100 mm long, 80 mm wide, 10 mm high, and a frame thickness of 10 mm, and further having four corners corresponding to the through holes of the metal base plate. First, the frame-shaped member corresponding to a case member (housing) for enclosing a semiconductor or the like, which has a bolt fastening portion with a through hole formed therein, was prepared.
For each of the metal-ceramic bonded substrates obtained in Examples 2, 10, 11, 12 and Comparative Examples 1 and 2, a frame-shaped member corresponding to the water cooling jacket was provided on the back surface of the metal base plate. A frame-shaped member corresponding to the case member was arranged on the surface of the metal base plate, and bolts were fastened through the through-holes of these frame-shaped members and the through-holes of the metal base plate.
For the metal-ceramic bonding substrate to which these frame members are fastened with bolts, a heat cycle (one cycle is -40°C x 30 minutes → 25°C x 10 minutes → 150°C x 30 minutes → 25°C x 10 minutes) A heat cycle test was conducted by adding 500 cycles of For evaluation, the bolt tightening torque was measured (actual measurement) before (initial) and after the heat cycle test. A reduction in tightening torque after the heat cycle of 20% or less compared to before the heat cycle was evaluated as good. In addition, the presence or absence of cracks in the ceramic substrate of the metal-ceramic bonding substrate after 500 cycles was confirmed.
As a result, in Examples 2, 10, 11, and 12, even after 500 heat cycles were applied to the initial value, the tightening torque was maintained at 80% or more (the decrease in torque was 20% or less). ). On the other hand, in Comparative Example 1, after 500 heat cycles were applied, the tightening torque was 16% of the initial value (the torque decreased by 84%). Moreover, deformation of 50 to 100 μm was confirmed in the fastening portion.
Further, in Examples 1 to 13 and Comparative Examples 1 and 3, no cracks were observed in the ceramic substrate after 500 heat cycles. It was unreliable as
(放熱性、導電性)
 金属ベース板の放熱性は熱伝導率、回路パターン用の金属板の導電性は導電率で評価した。熱伝導率は180W/mK以上、導電率は50%IACS以上を良好とした。
 実施例1~13および比較例1、3については熱伝導率および導電率ともに良好であった。
 比較例2は熱伝導率が137W/mKであり金属ベース板(放熱用)としては熱伝導率が低く放熱性に劣り、導電率は35%IACSで回路パターン用の金属板としては低すぎ使用に適していなかった。
(heat dissipation, conductivity)
The heat dissipation of the metal base plate was evaluated by thermal conductivity, and the conductivity of the metal plate for the circuit pattern was evaluated by conductivity. A thermal conductivity of 180 W/mK or higher and an electrical conductivity of 50% IACS or higher were considered good.
Examples 1 to 13 and Comparative Examples 1 and 3 were good in both thermal conductivity and electrical conductivity.
Comparative Example 2 has a thermal conductivity of 137 W/mK, which is low for a metal base plate (for heat dissipation) and poor in heat dissipation, and has a conductivity of 35%IACS, which is too low to be used as a metal plate for circuit patterns. was not suitable for
(ビッカース硬さ)
 回路パターン用金属板の表面、金属ベース板の強化部材近傍の表面について、JIS-Z2244に基づいてビッカース硬さを測定した。
 比較例2を除き、回路パターン用の金属板の表面のビッカース硬さHVは20~23の範囲であった。また、比較例1、2を除き、金属ベース板の表面のビッカース硬さHVは28~35の範囲であった。
 比較例1の金属ベース板のビッカース硬さHVは20~23の範囲であり、比較例2の回路パターン用の金属板の表面および金属ベース板の表面のビッカース硬さHVは45~48の範囲であった。
(Vickers hardness)
Vickers hardness was measured based on JIS-Z2244 for the surface of the circuit pattern metal plate and the surface of the metal base plate in the vicinity of the reinforcing member.
Except for Comparative Example 2, the Vickers hardness HV of the surface of the metal plate for circuit pattern was in the range of 20-23. Also, except for Comparative Examples 1 and 2, the Vickers hardness HV of the surface of the metal base plate was in the range of 28-35.
The Vickers hardness HV of the metal base plate of Comparative Example 1 is in the range of 20 to 23, and the Vickers hardness HV of the surface of the circuit pattern metal plate and the surface of the metal base plate in Comparative Example 2 is in the range of 45 to 48. Met.
(耐腐食性)
 塩水中での腐食試験を行った後に、強化部材または金属ベース板(アルミニウムまたはアルミニウム合金)の腐食が確認されたときを、耐腐食性に劣るとした。なお、耐腐食性に劣っていても、半導体装置に組み込む際に樹脂などで覆うなどの設計であれば腐食に対処でき問題とならない場合もあるが、耐腐食性に優れているのが望ましい。
 上記試験により、実施例10~13、比較例1、2は腐食が認められず耐腐食性に優れていた。実施例1~5、9は錆およびガルバニック腐食が認められ、実施例6~8、比較例3はガルバニック腐食が認められた。
(Corrosion resistance)
Corrosion resistance was judged to be poor when corrosion of the reinforcing member or metal base plate (aluminum or aluminum alloy) was confirmed after the corrosion test in salt water. In some cases, even if the corrosion resistance is poor, if the design is such that it is covered with resin or the like when incorporated into a semiconductor device, the corrosion can be dealt with and no problem arises, but it is desirable that the corrosion resistance is excellent.
According to the above test, Examples 10 to 13 and Comparative Examples 1 and 2 were excellent in corrosion resistance with no corrosion observed. Rust and galvanic corrosion were observed in Examples 1 to 5 and 9, and galvanic corrosion was observed in Examples 6 to 8 and Comparative Example 3.
 評価結果の概要を表1に示す。
Figure JPOXMLDOC01-appb-T000001
Table 1 shows an overview of the evaluation results.
Figure JPOXMLDOC01-appb-T000001
 本発明は、金属-セラミックス接合基板に適用できる。 The present invention can be applied to metal-ceramic bonding substrates.
1、2、3、4 金属-セラミックス接合基板
10 セラミックス基板
12 金属ベース板
14 金属板
16 強化部材
18 貫通孔
20 中型
21 セラミックス基板支持部
22 金属板形成部
23 金属ベース板形成部
24 強化部材収容部
25 凸部
26 湯道
27 注湯孔
30 アルミニウムまたはアルミニウム合金
40 外型
41 凸部
42、43 溶湯流入口
44 湯道
45 中型収容部
100 下型
200 上型
201 溶湯貯留部
202 金属ベース板形成部
203 強化部材収容部
204 給湯口
 
1, 2, 3, 4 metal-ceramic bonding substrate 10 ceramic substrate 12 metal base plate 14 metal plate 16 reinforcing member 18 through-hole 20 middle die 21 ceramic substrate support portion 22 metal plate forming portion 23 metal base plate forming portion 24 reinforcing member accommodation Portion 25 Convex portion 26 Runner 27 Pouring hole 30 Aluminum or aluminum alloy 40 Outer mold 41 Convex portions 42, 43 Molten metal inlet 44 Runner 45 Middle mold container 100 Lower mold 200 Upper mold 201 Molten metal reservoir 202 Metal base plate formation Part 203 Reinforcing member accommodation part 204 Hot water supply port

Claims (16)

  1.  セラミックス基板の一方の面に金属板が接合され、
     他方の面に金属ベース板が接合された金属-セラミックス接合基板において、
     金属ベース板の側面に、金属ベース板より強度が高い金属からなる板状の強化部材の側面が接合していることを特徴とする、金属-セラミックス接合基板。
    A metal plate is bonded to one side of the ceramic substrate,
    In a metal-ceramic bonded substrate having a metal base plate bonded to the other surface,
    A metal-ceramic bonding substrate, characterized in that the side surface of a metal base plate is joined to the side surface of a plate-shaped reinforcing member made of a metal having a higher strength than the metal base plate.
  2.  前記強化部材が貫通孔を備えていることを特徴とする、請求項1に記載の金属-セラミックス接合基板。 The metal-ceramic bonding substrate according to claim 1, characterized in that said reinforcing member has through holes.
  3.  前記金属ベース板が前記セラミックス基板に直接接合していることを特徴とする、請求項1または2に記載の金属-セラミックス接合基板。 The metal-ceramic bonding substrate according to claim 1 or 2, characterized in that the metal base plate is directly bonded to the ceramic substrate.
  4.  前記金属板が前記セラミックス基板に直接接合していることを特徴とする、請求項1~3のいずれかに記載の金属-セラミックス接合基板。 The metal-ceramic bonding substrate according to any one of claims 1 to 3, wherein the metal plate is directly bonded to the ceramic substrate.
  5.  前記金属ベース板がアルミニウムまたはアルミニウム合金からなることを特徴とする、請求項1~4のいずれかに記載の金属-セラミックス接合基板。 The metal-ceramic bonding substrate according to any one of claims 1 to 4, characterized in that said metal base plate is made of aluminum or an aluminum alloy.
  6.  前記強化部材が、炭素鋼またはステンレスからなることを特徴とする、請求項1~5のいずれかに記載の金属-セラミックス接合基板。 The metal-ceramic bonding substrate according to any one of claims 1 to 5, wherein the reinforcing member is made of carbon steel or stainless steel.
  7.  前記金属板がアルミニウムまたはアルミニウム合金からなることを特徴とする、請求項1~6のいずれかに記載の金属-セラミックス接合基板。 The metal-ceramic bonding substrate according to any one of claims 1 to 6, wherein the metal plate is made of aluminum or an aluminum alloy.
  8.  前記強化部材の主面にアルミニウムまたはアルミニウム合金が接合していることを特徴とする、請求項1~7のいずれかに記載の金属-セラミックス接合基板。 The metal-ceramic bonding substrate according to any one of claims 1 to 7, characterized in that aluminum or an aluminum alloy is bonded to the main surface of the reinforcing member.
  9.  前記強化部材と前記金属ベース板の接合界面に合金からなる接合層が形成されていることを特徴とする、請求項1~8のいずれかに記載の金属-セラミックス接合基板。 The metal-ceramic bonding substrate according to any one of claims 1 to 8, characterized in that a bonding layer made of an alloy is formed on the bonding interface between the reinforcing member and the metal base plate.
  10.  セラミックス基板の一方の面に金属板が接合するとともに、
     他方の面に金属ベース板が接合した金属-セラミックス接合基板の製造方法において、
     金属ベース板より融点および強度が高い金属からなる板状の強化部材と、セラミックス基板とを鋳型内に離間して配置させ、
     鋳型内のセラミックス基板の両面に接触するとともに強化部材の側面に接触するように金属の溶湯を注湯した後に冷却して固化させることにより、
     金属板を形成してセラミックス基板の一方の面に直接接合させるとともに、
     金属ベース板を形成してセラミックス基板の他方の面に直接接合させ、
     金属ベース板の側面に強化部材の側面を接合させることを特徴とする、金属-セラミックス接合基板の製造方法。
    A metal plate is joined to one side of the ceramic substrate,
    In a method for manufacturing a metal-ceramic bonded substrate in which a metal base plate is bonded to the other surface,
    A plate-shaped reinforcing member made of a metal having a melting point and strength higher than those of the metal base plate and a ceramic substrate are spaced apart from each other in the mold,
    By pouring a molten metal so that it contacts both sides of the ceramic substrate in the mold and contacts the side surface of the reinforcing member, and then cooling and solidifying,
    A metal plate is formed and directly bonded to one surface of the ceramic substrate,
    forming a metal base plate and directly bonding it to the other surface of the ceramic substrate;
    A method for manufacturing a metal-ceramic bonded substrate, which comprises bonding a side surface of a reinforcing member to a side surface of a metal base plate.
  11.  前記強化部材が貫通孔を備えていることを特徴とする、請求項10に記載の金属-セラミックス接合基板の製造方法。 The method for producing a metal-ceramic bonding substrate according to claim 10, characterized in that said reinforcing member has through holes.
  12.  前記金属ベース板を形成するための金属の溶湯がアルミニウムまたはアルミニウム合金からなることを特徴とする、請求項10または11に記載の金属-セラミックス接合基板の製造方法。 The method for producing a metal-ceramic bonding substrate according to claim 10 or 11, wherein the molten metal for forming the metal base plate is made of aluminum or an aluminum alloy.
  13.  前記強化部材が、炭素鋼またはステンレスからなることを特徴とする、請求項10~12のいずれかに記載の金属-セラミックス接合基板の製造方法。 The method for producing a metal-ceramic bonding substrate according to any one of claims 10 to 12, characterized in that said reinforcing member is made of carbon steel or stainless steel.
  14.  前記金属板を形成するための金属の溶湯がアルミニウムまたはアルミニウム合金からなることを特徴とする、請求項10~13のいずれかに記載の金属-セラミックス接合基板の製造方法。 The method for producing a metal-ceramic bonding substrate according to any one of claims 10 to 13, wherein the molten metal for forming the metal plate is made of aluminum or an aluminum alloy.
  15.  前記金属の溶湯を注湯する際、前記強化部材の主面に接触するように前記金属の溶湯を注湯した後に冷却して固化させることにより、強化部材の主面にアルミニウムまたはアルミニウム合金を接合することを特徴とする、請求項10~14のいずれかに記載の金属-セラミックス接合基板の製造方法。 When pouring the molten metal, the molten metal is poured so as to come into contact with the main surface of the reinforcing member, and then cooled and solidified, thereby joining aluminum or an aluminum alloy to the main surface of the reinforcing member. The method for producing a metal-ceramic bonding substrate according to any one of claims 10 to 14, characterized in that:
  16.  前記強化部材と前記金属ベース板の接合界面に合金からなる接合層を形成することを特徴とする、請求項10~15のいずれかに記載の金属-セラミックス接合基板の製造方法。
     
     
    16. The method for producing a metal-ceramic bonding substrate according to claim 10, wherein a bonding layer made of an alloy is formed on the bonding interface between said reinforcing member and said metal base plate.

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JP2016187009A (en) * 2015-03-27 2016-10-27 Dowaメタルテック株式会社 Metal-ceramic joined substrate and manufacturing method of the same
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JP2009200258A (en) * 2008-02-21 2009-09-03 Toyota Motor Corp Semiconductor module
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