WO2022200423A3 - Elektronisches bauteil, bauteilanordnung, funktionsschicht zum bilden eines elektronischen bauteils und verfahren zum herstellen eines elektronischen bauteils - Google Patents

Elektronisches bauteil, bauteilanordnung, funktionsschicht zum bilden eines elektronischen bauteils und verfahren zum herstellen eines elektronischen bauteils Download PDF

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Publication number
WO2022200423A3
WO2022200423A3 PCT/EP2022/057625 EP2022057625W WO2022200423A3 WO 2022200423 A3 WO2022200423 A3 WO 2022200423A3 EP 2022057625 W EP2022057625 W EP 2022057625W WO 2022200423 A3 WO2022200423 A3 WO 2022200423A3
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WO
WIPO (PCT)
Prior art keywords
electronic component
functional layer
component
producing
forming
Prior art date
Application number
PCT/EP2022/057625
Other languages
English (en)
French (fr)
Other versions
WO2022200423A2 (de
Inventor
Stephan Krüger
Ilona Skorupa
Nan DU
Heidemarie Schmidt
Original Assignee
Helmholtz-Zentrum Dresden - Rossendorf E.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Helmholtz-Zentrum Dresden - Rossendorf E.V. filed Critical Helmholtz-Zentrum Dresden - Rossendorf E.V.
Publication of WO2022200423A2 publication Critical patent/WO2022200423A2/de
Publication of WO2022200423A3 publication Critical patent/WO2022200423A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/10—Metal-oxide dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1272—Semiconductive ceramic capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F17/0013—Printed inductances with stacked layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

Offenbart wird ein elektronisches Bauteil (100) aufweisend eine Funktionsschicht (200), welche ein spontan polarisierbares Material und Pinzentren (240, 250) darin aufweist, wobei eine oder mehrere Eigenschaften von in dem spontan polarisierbaren Material ausgebildeten Domänenwänden (220) beeinflusst wird, und Elektroden (310, 320), welche die Funktionsschicht kontaktieren und eine kapazitive Struktur und/oder induktive Struktur bereitstellen, derart, dass zumindest eine elektrische Eigenschaft der kapazitiven und/oder induktiven Struktur durch die in dem spontan polarisierbaren Material ausgebildeten Domänenwände definiert ist.
PCT/EP2022/057625 2021-03-24 2022-03-23 Elektronisches bauteil, bauteilanordnung, funktionsschicht zum bilden eines elektronischen bauteils und verfahren zum herstellen eines elektronischen bauteils WO2022200423A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102021107402.9 2021-03-24
DE102021107402.9A DE102021107402A1 (de) 2021-03-24 2021-03-24 Elektronisches Bauteil, Bauteilanordnung, Funktionsschicht zum Bilden eines elektronischen Bauteils und Verfahren zum Herstellen eines elektronischen Bauteils

Publications (2)

Publication Number Publication Date
WO2022200423A2 WO2022200423A2 (de) 2022-09-29
WO2022200423A3 true WO2022200423A3 (de) 2022-12-01

Family

ID=81346328

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2022/057625 WO2022200423A2 (de) 2021-03-24 2022-03-23 Elektronisches bauteil, bauteilanordnung, funktionsschicht zum bilden eines elektronischen bauteils und verfahren zum herstellen eines elektronischen bauteils

Country Status (2)

Country Link
DE (1) DE102021107402A1 (de)
WO (1) WO2022200423A2 (de)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5280407A (en) * 1993-01-26 1994-01-18 Charles Stark Draper Laboratory, Inc. Linearized ferroelectric capacitor
US5790366A (en) * 1996-12-06 1998-08-04 Sharp Kabushiki Kaisha High temperature electrode-barriers for ferroelectric and other capacitor structures
DE102018112605A1 (de) * 2018-05-25 2019-11-28 Helmholtz-Zentrum Dresden - Rossendorf E.V. Verfahren zur Rekonfiguration einer Vortex-Dichte in einem Seltenen-Erd-Manganat, ein nichtflüchtiger Impedanzschalter und dessen Verwendung
DE102018125270A1 (de) * 2018-10-12 2020-04-16 Helmholtz-Zentrum Dresden - Rossendorf E.V. Verfahren zur Herstellung eines keramischen Materials mit lokal einstellbarem Permeabilitätsgradienten, dessen Anwendung in einem Beschichtungsverfahren sowie dessen Verwendung
US20200321344A1 (en) * 2019-04-08 2020-10-08 Kepler Computing Inc. Doped polar layers and semiconductor device incorporating same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10224475B2 (en) 2014-06-11 2019-03-05 The Regents Of The University Of California Method for fabricating superconducting devices using a focused ion beam

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5280407A (en) * 1993-01-26 1994-01-18 Charles Stark Draper Laboratory, Inc. Linearized ferroelectric capacitor
US5790366A (en) * 1996-12-06 1998-08-04 Sharp Kabushiki Kaisha High temperature electrode-barriers for ferroelectric and other capacitor structures
DE102018112605A1 (de) * 2018-05-25 2019-11-28 Helmholtz-Zentrum Dresden - Rossendorf E.V. Verfahren zur Rekonfiguration einer Vortex-Dichte in einem Seltenen-Erd-Manganat, ein nichtflüchtiger Impedanzschalter und dessen Verwendung
DE102018125270A1 (de) * 2018-10-12 2020-04-16 Helmholtz-Zentrum Dresden - Rossendorf E.V. Verfahren zur Herstellung eines keramischen Materials mit lokal einstellbarem Permeabilitätsgradienten, dessen Anwendung in einem Beschichtungsverfahren sowie dessen Verwendung
US20200321344A1 (en) * 2019-04-08 2020-10-08 Kepler Computing Inc. Doped polar layers and semiconductor device incorporating same

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
E. RUFF ET AL: "Conductivity Contrast and Tunneling Charge Transport in the Vortexlike Ferroelectric Domain Patterns of Multiferroic Hexagonal YMnO3", PHYSICAL REVIEW LETTERS, vol. 118, no. 3, 1 January 2017 (2017-01-01), US, XP055619153, ISSN: 0031-9007, DOI: 10.1103/PhysRevLett.118.036803 *
KIM YUNSEOK ET AL: "Origins of domain wall pinning in ferroelectric nanocapacitors", NANO CONVERGENCE, vol. 1, no. 1, 1 December 2014 (2014-12-01), XP055965216, Retrieved from the Internet <URL:https://iopscience.iop.org/article/10.1088/1361-648X/aa73c3/pdf> DOI: 10.1186/s40580-014-0024-4 *
PAVLO ZUBKO ET AL: "On the persistence of polar domains in ultrathin ferroelectric capacitors", JOURNAL OF PHYSICS: CONDENSED MATTER, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 29, no. 28, 9 June 2017 (2017-06-09), pages 284001, XP020317740, ISSN: 0953-8984, [retrieved on 20170609], DOI: 10.1088/1361-648X/AA73C3 *
ZHANG DAWEI ET AL: "Superior polarization retention through engineered domain wall pinning", NATURE COMMUNICATIONS, vol. 11, no. 1, 17 January 2020 (2020-01-17), XP055965218, Retrieved from the Internet <URL:http://www.nature.com/articles/s41467-019-14250-7> DOI: 10.1038/s41467-019-14250-7 *

Also Published As

Publication number Publication date
DE102021107402A1 (de) 2022-09-29
WO2022200423A2 (de) 2022-09-29

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