WO2022200423A3 - Elektronisches bauteil, bauteilanordnung, funktionsschicht zum bilden eines elektronischen bauteils und verfahren zum herstellen eines elektronischen bauteils - Google Patents
Elektronisches bauteil, bauteilanordnung, funktionsschicht zum bilden eines elektronischen bauteils und verfahren zum herstellen eines elektronischen bauteils Download PDFInfo
- Publication number
- WO2022200423A3 WO2022200423A3 PCT/EP2022/057625 EP2022057625W WO2022200423A3 WO 2022200423 A3 WO2022200423 A3 WO 2022200423A3 EP 2022057625 W EP2022057625 W EP 2022057625W WO 2022200423 A3 WO2022200423 A3 WO 2022200423A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electronic component
- functional layer
- component
- producing
- forming
- Prior art date
Links
- 239000002346 layers by function Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 4
- 230000001939 inductive effect Effects 0.000 abstract 2
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/10—Metal-oxide dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1272—Semiconductive ceramic capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0013—Printed inductances with stacked layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Coils Or Transformers For Communication (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Offenbart wird ein elektronisches Bauteil (100) aufweisend eine Funktionsschicht (200), welche ein spontan polarisierbares Material und Pinzentren (240, 250) darin aufweist, wobei eine oder mehrere Eigenschaften von in dem spontan polarisierbaren Material ausgebildeten Domänenwänden (220) beeinflusst wird, und Elektroden (310, 320), welche die Funktionsschicht kontaktieren und eine kapazitive Struktur und/oder induktive Struktur bereitstellen, derart, dass zumindest eine elektrische Eigenschaft der kapazitiven und/oder induktiven Struktur durch die in dem spontan polarisierbaren Material ausgebildeten Domänenwände definiert ist.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102021107402.9 | 2021-03-24 | ||
DE102021107402.9A DE102021107402A1 (de) | 2021-03-24 | 2021-03-24 | Elektronisches Bauteil, Bauteilanordnung, Funktionsschicht zum Bilden eines elektronischen Bauteils und Verfahren zum Herstellen eines elektronischen Bauteils |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2022200423A2 WO2022200423A2 (de) | 2022-09-29 |
WO2022200423A3 true WO2022200423A3 (de) | 2022-12-01 |
Family
ID=81346328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2022/057625 WO2022200423A2 (de) | 2021-03-24 | 2022-03-23 | Elektronisches bauteil, bauteilanordnung, funktionsschicht zum bilden eines elektronischen bauteils und verfahren zum herstellen eines elektronischen bauteils |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE102021107402A1 (de) |
WO (1) | WO2022200423A2 (de) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5280407A (en) * | 1993-01-26 | 1994-01-18 | Charles Stark Draper Laboratory, Inc. | Linearized ferroelectric capacitor |
US5790366A (en) * | 1996-12-06 | 1998-08-04 | Sharp Kabushiki Kaisha | High temperature electrode-barriers for ferroelectric and other capacitor structures |
DE102018112605A1 (de) * | 2018-05-25 | 2019-11-28 | Helmholtz-Zentrum Dresden - Rossendorf E.V. | Verfahren zur Rekonfiguration einer Vortex-Dichte in einem Seltenen-Erd-Manganat, ein nichtflüchtiger Impedanzschalter und dessen Verwendung |
DE102018125270A1 (de) * | 2018-10-12 | 2020-04-16 | Helmholtz-Zentrum Dresden - Rossendorf E.V. | Verfahren zur Herstellung eines keramischen Materials mit lokal einstellbarem Permeabilitätsgradienten, dessen Anwendung in einem Beschichtungsverfahren sowie dessen Verwendung |
US20200321344A1 (en) * | 2019-04-08 | 2020-10-08 | Kepler Computing Inc. | Doped polar layers and semiconductor device incorporating same |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016003626A2 (en) | 2014-06-11 | 2016-01-07 | The Regents Of The University Of California | Method for fabricating superconducting devices using a focused ion beam |
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2021
- 2021-03-24 DE DE102021107402.9A patent/DE102021107402A1/de active Granted
-
2022
- 2022-03-23 WO PCT/EP2022/057625 patent/WO2022200423A2/de active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5280407A (en) * | 1993-01-26 | 1994-01-18 | Charles Stark Draper Laboratory, Inc. | Linearized ferroelectric capacitor |
US5790366A (en) * | 1996-12-06 | 1998-08-04 | Sharp Kabushiki Kaisha | High temperature electrode-barriers for ferroelectric and other capacitor structures |
DE102018112605A1 (de) * | 2018-05-25 | 2019-11-28 | Helmholtz-Zentrum Dresden - Rossendorf E.V. | Verfahren zur Rekonfiguration einer Vortex-Dichte in einem Seltenen-Erd-Manganat, ein nichtflüchtiger Impedanzschalter und dessen Verwendung |
DE102018125270A1 (de) * | 2018-10-12 | 2020-04-16 | Helmholtz-Zentrum Dresden - Rossendorf E.V. | Verfahren zur Herstellung eines keramischen Materials mit lokal einstellbarem Permeabilitätsgradienten, dessen Anwendung in einem Beschichtungsverfahren sowie dessen Verwendung |
US20200321344A1 (en) * | 2019-04-08 | 2020-10-08 | Kepler Computing Inc. | Doped polar layers and semiconductor device incorporating same |
Non-Patent Citations (4)
Title |
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E. RUFF ET AL: "Conductivity Contrast and Tunneling Charge Transport in the Vortexlike Ferroelectric Domain Patterns of Multiferroic Hexagonal YMnO3", PHYSICAL REVIEW LETTERS, vol. 118, no. 3, 1 January 2017 (2017-01-01), US, XP055619153, ISSN: 0031-9007, DOI: 10.1103/PhysRevLett.118.036803 * |
KIM YUNSEOK ET AL: "Origins of domain wall pinning in ferroelectric nanocapacitors", NANO CONVERGENCE, vol. 1, no. 1, 1 December 2014 (2014-12-01), XP055965216, Retrieved from the Internet <URL:https://iopscience.iop.org/article/10.1088/1361-648X/aa73c3/pdf> DOI: 10.1186/s40580-014-0024-4 * |
PAVLO ZUBKO ET AL: "On the persistence of polar domains in ultrathin ferroelectric capacitors", JOURNAL OF PHYSICS: CONDENSED MATTER, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 29, no. 28, 9 June 2017 (2017-06-09), pages 284001, XP020317740, ISSN: 0953-8984, [retrieved on 20170609], DOI: 10.1088/1361-648X/AA73C3 * |
ZHANG DAWEI ET AL: "Superior polarization retention through engineered domain wall pinning", NATURE COMMUNICATIONS, vol. 11, no. 1, 17 January 2020 (2020-01-17), XP055965218, Retrieved from the Internet <URL:http://www.nature.com/articles/s41467-019-14250-7> DOI: 10.1038/s41467-019-14250-7 * |
Also Published As
Publication number | Publication date |
---|---|
DE102021107402A1 (de) | 2022-09-29 |
WO2022200423A2 (de) | 2022-09-29 |
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