WO2022199413A1

WO2022199413A1 - Pixel sensing array and visual sensor

Info

Publication number: WO2022199413A1
Application number: PCT/CN2022/080681
Authority: WO
Inventors: 何伟; 杨哲宇; 祝夭龙
Original assignee: 北京灵汐科技有限公司
Priority date: 2021-03-23
Filing date: 2022-03-14
Publication date: 2022-09-29

Abstract

Disclosed in embodiments of the present disclosure are a pixel sensing array and a visual sensor. The pixel sensing array comprises a pixel structure. the pixel structure has a first pixel sensing unit and a second pixel sensing unit. The first pixel sensing unit is configured to receive light of a first wave band, and the second pixel sensing unit is configured to receive light of a second wave band. The second pixel sensing unit comprises a plurality of sub-pixel sensing units, and the at least two sub-pixel sensing units are arranged adjacent to the first pixel sensing unit. According to the technical solution of the embodiments of the present disclosure, different types of image information may be acquired by means of a visual sensor comprising a pixel sensing array, so as to improve the performance of the visual sensor, widen the application scenario of the visual sensor, and further facilitate improving the pixel integration of the pixel sensing array, thereby improving the image quality acquired by the vision sensor.

Description

Pixel Sensing Arrays and Vision Sensors

technical field

The present disclosure relates to the technical field of image sensing, and in particular, to a pixel sensing array and a vision sensor.

Background technique

Vision sensor refers to an instrument that uses optical components and imaging devices to obtain image information of the external environment. Vision sensors in related technologies can only obtain one type of image information. For example, vision sensors include Active Pixel Sensor (APS) and dynamic vision. Sensor (Dynamic Vision Sensor, DVS), the active pixel sensor mainly perceives color information, and the dynamic vision sensor mainly perceives the change information of light intensity.

SUMMARY OF THE INVENTION

Embodiments of the present disclosure provide a pixel sensing array and a visual sensor, so as to improve the performance of the visual sensor, broaden the application scenarios of the visual sensor, and improve the pixel integration degree of the pixel sensing array.

In a first aspect, embodiments of the present disclosure provide a pixel sensing array, including a pixel structure, where the pixel structure includes:

a first pixel sensing unit and a second pixel sensing unit, wherein the first pixel sensing unit is used for receiving light of the first wavelength band, and the second pixel sensing unit is used to receive light of the second wavelength band;

The second pixel sensing unit includes a plurality of sub-pixel sensing units, and at least two of the sub-pixel sensing units are disposed adjacent to the first pixel sensing unit.

In a second aspect, an embodiment of the present disclosure further provides a visual sensor, including a sensing control unit and the pixel sensing array described in the first aspect;

The sensing control unit is electrically connected with the first pixel sensing unit and the second pixel sensing unit, and the sensing control unit is used for the first pixel sensing unit and the second pixel sensing unit. The electrical signal obtained by the sensing unit is processed.

The pixel sensing array provided by the embodiment of the present disclosure includes a first pixel sensing unit and a second pixel sensing unit, and the pixel sensing array can receive light of a first wavelength band through the first pixel sensing unit, and pass through the second pixel The sensing unit receives the light of the second wavelength band, and when the first wavelength band and the second wavelength band are different wavelength bands, different information in the target light signal can also be sensed by the first pixel sensing unit and the second pixel sensing unit. The second pixel sensing unit includes a plurality of sub-pixel sensing units, and the plurality of sub-pixel sensing units are arranged around the first pixel sensing unit, which helps to reduce the number of the first pixel sensing unit and the sub-pixel sensing units in each pixel structure. The distance between the pixel sensing units is reduced, the distance between adjacent sub-pixel sensing units is reduced, and the photosensitive area of the sub-pixel sensing unit is smaller than that of the first pixel sensing unit. The spacing between adjacent sub-pixel sensing units is smaller, so that the area of the pixel area corresponding to the sub-pixel sensing unit in the pixel sensing array is smaller, and the area between adjacent pixel areas corresponding to adjacent sub-pixel sensing units is smaller. The distance between them is also smaller. The technical solutions of the embodiments of the present disclosure help to solve the problems in the related art that the visual sensor can only acquire a single type of image information and the pixel integration degree is low, and it is beneficial to acquire different types of images through the visual sensor including the pixel sensor array information to improve the performance of the vision sensor, broaden the application scenarios of the vision sensor, and also help to improve the pixel integration of the pixel sensor array, thereby improving the image quality obtained by the vision sensor.

It should be understood that what is described in this section is not intended to identify key or critical features of embodiments of the disclosure, nor is it intended to limit the scope of the disclosure. Other features of the present disclosure will become readily understood from the following description.

Description of drawings

The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification, and together with the embodiments of the present disclosure, they are used to explain the present disclosure, and are not intended to limit the present disclosure. The above and other features and advantages will become more apparent to those skilled in the art from the description of detailed example embodiments with reference to the accompanying drawings.

The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification, and together with the embodiments of the present disclosure, they are used to explain the present disclosure, and are not intended to limit the present disclosure. The above and other features and advantages will become more apparent to those skilled in the art by describing detailed example embodiments with reference to the accompanying drawings, in which:

FIG. 1 is a schematic structural diagram of a pixel sensing array provided by an embodiment of the present disclosure;

FIG. 2 is a schematic diagram of a pixel structure provided by an embodiment of the present disclosure;

3 is a schematic diagram of another pixel structure provided by an embodiment of the present disclosure;

4 is a schematic diagram of another pixel structure provided by an embodiment of the present disclosure;

5 is a schematic diagram of a pixel structure provided by an embodiment of the present disclosure;

6 is a schematic diagram of another pixel structure provided by an embodiment of the present disclosure;

FIG. 7 is a schematic structural diagram of a pixel sensing array provided by an embodiment of the present disclosure;

8 is a schematic diagram of a module structure of a visual sensor provided by an embodiment of the present disclosure;

FIG. 9 is a schematic structural diagram of a repeating unit provided by an embodiment of the present disclosure.

Detailed ways

In order for those skilled in the art to better understand the technical solutions of the present disclosure, the exemplary embodiments of the present disclosure are described below with reference to the accompanying drawings, including various details of the embodiments of the present disclosure to facilitate understanding, and they should be considered to be exemplary only. Accordingly, those of ordinary skill in the art will recognize that various changes and modifications of the embodiments described herein can be made without departing from the scope and spirit of the present disclosure. Also, descriptions of well-known functions and constructions are omitted from the following description for clarity and conciseness.

Various embodiments of the present disclosure and various features of the embodiments may be combined with each other without conflict.

As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

The terminology used herein is used to describe particular embodiments only and is not intended to limit the present disclosure. As used herein, the singular forms "a" and "the" are intended to include the plural forms as well, unless the context clearly dictates otherwise. It will also be understood that when the terms "comprising" and/or "made of" are used in this specification, the stated features, integers, steps, operations, elements and/or components are specified to be present, but not precluded or Add one or more other features, integers, steps, operations, elements, components, and/or groups thereof. Words like "connected" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art. It will also be understood that terms such as those defined in common dictionaries should be construed as having meanings consistent with their meanings in the context of the related art and the present disclosure, and will not be construed as having idealized or over-formal meanings, unless expressly so limited herein.

The present disclosure will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present disclosure, but not to limit the present disclosure. In addition, it should be noted that, for the convenience of description, the drawings only show some but not all structures related to the present disclosure.

In the related art, the visual sensor cannot obtain color information and light intensity change information at the same time, which limits the performance and application of the visual sensor. In addition, a vision sensor generally acquires image information through a pixel array composed of photosensitive devices. However, the pixel integration degree of the vision sensor in the related art is low, which affects the image quality acquired by the vision sensor.

An embodiment of the present disclosure provides a pixel sensing array. FIG. 1 is a schematic structural diagram of a pixel sensing array provided by an embodiment of the present disclosure. As shown in FIG. 1 , the pixel sensing array provided by an embodiment of the present disclosure includes pixels The pixel structure includes: a first pixel sensing unit 10 and a second pixel sensing unit 20; the first pixel sensing unit 10 is used to receive the light of the first wavelength band, and the second pixel sensing unit 20 is used to receive the first pixel sensing unit 20. Two-wavelength light; the second pixel sensing unit 20 includes a plurality of sub-pixel sensing units 210, and at least two sub-pixel sensing units are disposed adjacent to the first pixel sensing unit.

The pixel sensing array provided by the embodiment of the present disclosure can be applied to a vision sensor, so as to realize the collection of target light signals through the pixel sensing array, and then convert the target light signal into a corresponding image signal or video signal through the vision sensor, wherein, The target light signal may come from a static character, a dynamic character, a static scene, or a dynamic scene, etc., which is not limited in this embodiment of the present disclosure.

In some embodiments, both the first pixel sensing unit 10 and the second pixel sensing unit 20 may include photosensitive units, and the first pixel sensing unit 10 and the second pixel sensing unit 20 may be used to form a pixel sensing array A plurality of pixel structures, each pixel structure can correspond to a pixel in the image, so that each pixel structure passes through the first pixel sensing unit 10 and the second pixel sensing unit 20 in the corresponding pixel area. The optical signal is converted into the corresponding electrical signal.

The first pixel sensing unit 10 is configured to receive the light of the first wavelength band, which means that the first pixel sensing unit 10 can extract the light of the first wavelength band in the target light signal. The first pixel sensing unit 10 may adopt different structures. For example, the first pixel sensing unit 10 includes a photosensitive unit; or, the first pixel sensing unit 10 includes a photosensitive unit and a filter unit.

When the first pixel sensing unit 10 includes a photosensitive unit, the light of the first wavelength band in the target light signal can be directly extracted by the photosensitive unit, and the light of the first wavelength band can be converted into a corresponding electrical signal. When 10 includes a photosensitive unit and a filter unit, the light of the first wavelength band in the target light signal can be extracted by the filter unit, and the light of the first wavelength band can be converted into a corresponding electrical signal by the photosensitive unit. The light in the first wavelength band may be light in at least part of the visible light, infrared and ultraviolet wavelength bands.

Similarly, the second pixel sensing unit 20 is configured to receive the light of the second wavelength band, which means that the second pixel sensing unit 20 can extract the light of the second wavelength band in the target optical signal through the sub-pixel sensing unit 210 , and the second pixel sensing unit 20 The sub-pixel sensing unit 210 of the pixel sensing unit 20 may adopt different structures. For example, the sub-pixel sensing unit 210 of the second pixel sensing unit 20 includes a photosensitive unit; or, the second pixel sensing unit 20 includes a photosensitive unit and a filter unit. When the sub-pixel sensing unit 210 in the second pixel sensing unit 20 includes a photosensitive unit, the light of the second wavelength band in the target light signal can be directly extracted by the photosensitive unit, and the light of the second wavelength band can be converted into corresponding electrical light. signal, when the sub-pixel sensing unit 210 in the second pixel sensing unit 20 includes a photosensitive unit and a filter unit, the light of the second wavelength band in the target light signal can be extracted by the filter unit, and the second wavelength can be extracted by the photosensitive unit. The wavelengths of light are converted into corresponding electrical signals. The light in the second wavelength band may be light in at least part of the visible light, infrared and ultraviolet wavelength bands.

The first band and the second band may be the same band or different bands. When the first wavelength band and the second wavelength band are different wavelength bands, it is helpful to sense different information in the target light signal through the first pixel sensing unit 10 and the second pixel sensing unit 20, so as to improve the vision sensor including the pixel structure performance, and broaden the application scenarios of this vision sensor.

In some embodiments, the first pixel sensing units 10 and the second pixel sensing units 20 are alternately arranged in an array, which means that in each row of the pixel sensing array, the first pixel sensing units 10 and the second pixel sensing units The sensing units 20 are alternately arranged. In each column of the pixel sensing array, the first pixel sensing units 10 and the second pixel sensing units 20 are alternately arranged, and any two first pixel sensing units 10 are not in phase with each other. Adjacent, any two second pixel sensing units 20 are not adjacent. The advantage of this arrangement is that it is beneficial to reduce the spacing between adjacent pixel sensing units, thereby reducing the spacing between adjacent pixel regions corresponding to the pixel sensing units, so as to improve the pixel integration of the pixel sensing array and improve the The image accuracy acquired by the pixel sensing array.

FIG. 1 only schematically shows a case where the second pixel sensing unit 20 includes four sub-pixel sensing units 210. In the embodiment of the present disclosure, the second pixel sensing unit 20 includes a plurality of sub-pixel sensing units 210. This embodiment does not specifically limit the number of the plurality of sub-pixel sensing units 210 . In the pixel sensing array of the related art, the photosensitive area of each pixel sensing unit is equal. Compared with the related art, the embodiment of the present disclosure provides that the second pixel sensing unit 20 includes a plurality of sub-pixel sensing units 210, The photosensitive area of the sub-pixel sensing unit 210 is smaller than that of the first pixel sensing unit 10, and the distance between adjacent sub-pixel sensing units 210 is smaller, so that the sub-pixel sensing units 210 The area of the corresponding pixel area in the sensing array is smaller, and the spacing between adjacent pixel areas corresponding to adjacent sub-pixel sensing units 210 is also smaller. The pixel integration degree is improved, thereby improving the image accuracy obtained by the pixel sensing array.

The pixel sensing array provided by the embodiment of the present disclosure includes a first pixel sensing unit and a second pixel sensing unit, and the pixel sensing array can receive light of a first wavelength band through the first pixel sensing unit, and pass through the second pixel The sensing unit receives the light of the second wavelength band, and when the first wavelength band and the second wavelength band are different wavelength bands, different information in the target light signal can also be sensed by the first pixel sensing unit and the second pixel sensing unit. The second pixel sensing unit includes a plurality of sub-pixel sensing units, and the first pixel sensing unit and the second pixel sensing unit are alternately arranged in an array, so that the photosensitive area of the sub-pixel sensing unit is relatively opposite to that of the first pixel sensing unit. The photosensitive area is smaller, and the spacing between adjacent sub-pixel sensing units is smaller, so that the area of the corresponding pixel area of the sub-pixel sensing unit in the pixel sensing array is smaller, and the adjacent sub-pixel sensing units have smaller areas. The spacing between adjacent pixel regions corresponding to the cells is also smaller. The technical solutions of the embodiments of the present disclosure help to solve the problems in the related art that the visual sensor can only acquire a single type of image information and the pixel integration degree is low, and it is beneficial to acquire different types of images through the visual sensor including the pixel sensor array information to improve the performance of the vision sensor, broaden the application scenarios of the vision sensor, and also help to improve the pixel integration of the pixel sensor array, thereby improving the image quality obtained by the vision sensor.

On the basis of the above solution, optionally, referring to FIG. 1 , the sum of the photosensitive areas of the multiple sub-pixel sensing units 210 is set to be equal to the photosensitive area of the first pixel sensing unit 10 , that is, the second pixel sensing unit 20 has the same photosensitive area. The photosensitive area is equal to the photosensitive area of the first pixel sensing unit 10 .

In some embodiments, in this embodiment, the first pixel sensing unit 10 and the second pixel sensing unit 20 are arranged alternately in an array in the pixel structure 100 , and a plurality of sub-pixels in the second pixel sensing unit 20 The sum of the photosensitive areas of the sensing units 210 is equal to the photosensitive area of the first pixel sensing unit 10, so that the photosensitive area of the second pixel sensing unit 20 is equal to the photosensitive area of the first pixel sensing unit 10, so as to improve the pixel sensitivity On the basis of improving the pixel integration degree of the sensing array and improving the image accuracy obtained by the pixel sensing array, the structure of the pixel sensing array is made more regular, which helps to simplify the fabrication process of the pixel sensing array.

FIG. 2 is a schematic diagram of a pixel structure provided by an embodiment of the present disclosure, and the pixel structure is a pixel structure in the pixel sensing array shown in FIG. 1 ; FIG. 3 is another pixel structure provided by an embodiment of the present disclosure. Schematic diagram, the pixel structure is another pixel structure in the pixel sensing array shown in FIG. 1; FIG. 4 is a schematic diagram of another pixel structure provided by an embodiment of the present disclosure, and the pixel structure is the pixel sensor shown in FIG. 1 . Another pixel structure in an array. As shown in FIGS. 1 to 4 , the pixel sensing array includes at least one pixel structure 100 , and the pixel structure 100 includes a first pixel sensing unit 10 and four second pixel sensing units surrounding the first pixel sensing unit 10 . At least two of the units 20 , and at least one of the four first pixel sensing units 10 surrounding the first pixel sensing unit 10 .

In some embodiments, when the pixel structure 100 includes two second pixel sensing units 20 , the two second pixel sensing units 20 are the first pixel sensing unit 10 located in the center of the pixel structure 100 on the left and right sides of the first pixel sensing unit 10 . Two-pixel sensing units 20, or second pixel sensing units 20 on the upper and lower sides. FIG. 1 schematically shows that the pixel sensing array includes a plurality of pixel structures 100, and each pixel structure 100 is the same as the pixel structure 100 shown in FIG. 2. In practical applications, multiple pixel structures 100 in the pixel sensing array are The pixel structure 100 may also be the same as the pixel structure 100 shown in FIG. 3 , or the same as the pixel structure 100 shown in FIG. 4 , or may also be in other forms. The following will describe several forms of the pixel structure 100 in the pixel sensing array. Schematic illustration.

Referring to FIG. 2, the pixel structure 100 may include one first pixel sensing unit 10a, four second pixel sensing units 20 surrounding the first pixel sensing unit 10a, and four second pixel sensing units 20 surrounding the first pixel sensing unit 10a A pixel sensing unit 10b. Alternatively, referring to FIG. 3, the pixel structure 100 includes a first pixel sensing unit 10a, two second pixel sensing units 20 located on the upper and lower sides of the first pixel sensing unit 10a, and surrounding the first pixel sensing unit Four first pixel sensing units 10b of 10a. Alternatively, referring to FIG. 4, the pixel structure 100 includes a first pixel sensing unit 10a, two second pixel sensing units 20 located on the left and right sides of the first pixel sensing unit 10a, and surrounding the first pixel sensing unit 10a. Four first pixel sensing units 10b of 10a. In addition, FIG. 1 to FIG. 4 all illustrate the case where the pixel structure 100 includes four first pixel sensing units 10b surrounding the first pixel sensing unit 10a, in practical applications, the pixel structure 100 may also include only four One, two, or three of the first pixel sensing units 10b are not limited in this embodiment of the present disclosure.

For example, each pixel structure 100 in the pixel sensing array may correspond to one pixel area. When the pixel structure 100 determines the image information of the corresponding pixel area according to the received target light signal, each pixel structure 100 may The first pixel sensing unit 10 extracts the light of the first wavelength band in the target light signal, and converts the light of the first wavelength band into a corresponding electrical signal, which passes through the sub-pixel sensing unit 210 in each second pixel sensing unit 20 Extracting the light of the second waveband in the target optical signal, and converting the light of the second waveband into a corresponding electrical signal. When the pixel sensing array is applied to a visual sensor, this solution is beneficial to enable the visual sensor to determine the first pixel area of the pixel area according to the difference between the electrical signals converted by different first pixel sensing units 10 in each pixel structure 100. The change amount of light in one wavelength band, and the image information corresponding to the light in the second wavelength band of the pixel area is determined by the plurality of sub-pixel sensing units 210 in the second pixel sensing unit 20, so that the visual sensor can determine each pixel area two kinds of image information.

Referring to FIG. 1 , FIG. 2 and FIG. 4 , optionally, when the pixel structure 100 includes the second pixel sensing units 20 on the left and right sides of the first pixel sensing unit 10 a located in the center, two adjacent pixels in the row direction The structure 100 shares the second pixel sensing unit 20 between the two centrally located first pixel sensing units 10a. The advantage of this arrangement is that in each row of pixel structures, the multiplexing of the second pixel sensing units in adjacent pixel structures is realized. For example, the pixel structure 100 can determine and characterize the pixel area according to its own second pixel sensing unit 20 . The color light intensity signal of the light, wherein the second pixel sensing unit 20 located on the right side of the first pixel sensing unit 10a may also be the second pixel sensing unit in the adjacent pixel structure 100b, so as to realize the first pixel sensing unit 20. The multiplexing of the two-pixel sensing units 20 is also beneficial to improve the pixel fill factor of the pixel sensing array.

Referring to FIGS. 1 to 4 , on the basis of the above solution, optionally, the first pixel sensing units 10 in the pixel structure 100 other than the first pixel sensing unit 10 located in the center are replaced by the pixel structure where the pixel structure 100 is located. 100 and the pixel structure 100 adjacent to itself are shared. The advantage of this arrangement is that the multiplexing of the first pixel sensing units in adjacent pixel structures is realized. For example, the pixel structure 100 can be based on the electrical energy converted by the first pixel sensing unit 10a and the first pixel sensing unit 10b. The differential signal of the signal is used to obtain the light intensity change signal representing the light in the pixel area, wherein the two first pixel sensing units 10b on the right side of the first pixel sensing unit 10a may also be adjacent pixel structures 100b The first pixel sensing unit 10b in the first pixel sensing unit 10b, the two first pixel sensing units 10b below the first pixel sensing unit 10a, or the first pixel sensing unit 10b in the adjacent pixel structure 100a, to achieve The multiplexing of the first pixel sensing units, and this arrangement is also beneficial to improve the pixel fill factor of the pixel sensing array.

In some embodiments, the second pixel sensing unit 20 includes a plurality of sub-pixel sensing units 210 , and the plurality of sub-pixel sensing units 210 are arranged around the first pixel sensing unit 10 . FIG. 5 only schematically shows a case where one second pixel sensing unit includes twelve sub-pixel sensing units 210 arranged around the first pixel sensing unit 10 . In this embodiment of the present disclosure, the number of sub-pixel sensing units 210 in the second pixel sensing unit can be set according to requirements, which is not specifically limited in this embodiment. The multiple sub-pixel sensing units 210 are arranged around the first pixel sensing unit 10 , which means that the multiple sub-pixel sensing units 210 in the second pixel sensing unit are connected end to end and surround the first pixel sensing unit 10 . In the pixel sensing array of the related art, the photosensitive area of each pixel sensing unit is equal, and different pixel sensing units in the pixel sensing array are alternately arranged. The two-pixel sensing unit 20 includes a plurality of sub-pixel sensing units 210, and the plurality of sub-pixel sensing units 210 are arranged around the first pixel sensing unit 10, so that the first pixel sensing unit 10 can receive the pixel area corresponding to the pixel structure 100 The plurality of sub-pixel sensing units 210 can receive the light of the second wavelength band around the first pixel sensing unit 10 in the pixel area, which is helpful to determine the image signal or video signal of the pixel area, and at the same time , also helps to reduce the distance between the center of the first pixel sensing unit 10 and the center of the sub-pixel sensing unit 210, and reduce the distance between adjacent sub-pixel sensing units 210, thereby improving the pixel The pixel integration degree of the sensing array is improved, thereby improving the image accuracy obtained by the pixel sensing array.

In some embodiments, referring to FIG. 5 , the photosensitive area of the sub-pixel sensing unit 210 is set to be smaller than the photosensitive area of the first pixel sensing unit 10 .

In the pixel sensing array of the related art, the photosensitive area of each pixel sensing unit is equal. Compared with the related art, in the embodiment of the present disclosure, the photosensitive area of the sub-pixel sensing unit 210 is set smaller than that of the first pixel sensing unit 10 . The light-sensing area of 100 is not only helpful to reduce the distance between the first pixel sensing unit 10 and the sub-pixel sensing unit 210 in each pixel structure 100, but also helps to reduce the adjacent sub-pixel sensing units 210 to improve the pixel integration of the pixel sensor array, thereby improving the image quality obtained by the vision sensor. Exemplarily, the photosensitive area of each sub-pixel sensing unit 210 may be set to be a quarter of the photosensitive area of the first pixel sensing unit 10 , which is the same as that of the sub-pixel sensing unit 210 and the first pixel sensing unit 10 . Compared with the arrangement in which the photosensitive areas are equal, this solution makes each side edge of the first pixel sensing unit 10 adjacent to the two sub-pixel sensing units 210, which helps to reduce the gap between adjacent pixel sensing units by reducing the The distance can improve the pixel integration degree of the pixel sensing array, thereby improving the image accuracy obtained by the pixel sensing array.

The pixel sensing array provided by the embodiments of the present disclosure helps to solve the problems in the related art that the visual sensor can only obtain a single type of image information and the pixel integration is low, and is beneficial to obtain different image information through the visual sensor including the pixel sensing array. Various types of image information can improve the performance of the vision sensor, broaden the application scenarios of the vision sensor, and also help to improve the pixel integration of the pixel sensor array, thereby improving the image quality obtained by the vision sensor.

Referring to FIG. 5 , each pixel structure 100 includes a first pixel sensing unit 10 and a second pixel sensing unit 20 ; a plurality of sub-pixel sensing units 210 are arranged around four sides of the first pixel sensing unit 10 , the number of sub-pixel sensing units 210 surrounding each side edge of the first pixel sensing unit 10 is equal, and a row of sub-pixel sensing units 210 surrounding adjacent edges of the first pixel sensing unit 10 is connected to a column of sub-pixel sensing units 210 . The sensing units 210 are connected and share one sub-pixel sensing unit 210 .

5 shows the case where the photosensitive areas of the first pixel sensing unit 10 and the sub-pixel sensing unit 210 are both approximately square, so that the photosensitive area of each sub-pixel sensing unit 210 is the photosensitive area of the first pixel sensing unit 10 A quarter of the area is taken as an example to illustrate: a second pixel sensing unit 20 includes twelve sub-pixel sensing units 210, and the twelve sub-pixel sensing units 210 surround the four side edges of the first pixel sensing unit 10, Each side edge of the first pixel sensing unit 10 is provided with four sub-pixel sensing units 210 correspondingly. The sensing units 210 are connected to each other and share one sub-pixel sensing unit 210 , that is, each of the four sub-pixel sensing units 210 located at the four corners of the pixel structure 100 is controlled by the sub-pixel sensing unit 210 and the sub-pixel sensing unit 210 of the row to which it belongs. A column of sub-pixel sensing units 210 is shared. The advantage of this arrangement is that each side edge of the first pixel sensing unit 10 is adjacent to the two sub-pixel sensing units 210 , and the four corners of the first pixel sensing unit 10 are also adjacent to the four sub-pixel sensing units 210 . Adjacent, it is helpful to use the first pixel sensing unit 10 in each pixel structure 100 to receive the light of the first wavelength band, and use the sub-pixel sensing unit 210 to receive the light of the second wavelength band, thereby assisting in determining the corresponding pixel structure 100 It also helps to improve the pixel integration degree of the pixel sensing array, thereby improving the image accuracy obtained by the pixel sensing array.

Referring to FIG. 1 , on the basis of the above solution, optionally, the first pixel sensing unit 10 is further configured to convert the light of the first wavelength band into an electrical signal representing its light intensity information; the second pixel sensing unit 20 is further It is used to convert the light of the second band into an electrical signal that characterizes its color light intensity information.

In some embodiments, the first pixel sensing unit 10 converts the light of the first wavelength band into an electrical signal representing its light intensity information, where the light intensity information is the light intensity information of the light of the first wavelength band, which can also be understood as light Strong corresponding grayscale information. The second pixel sensing unit 20 converts the light of the second wavelength band into an electrical signal representing its color light intensity information, wherein the color light intensity information includes not only absolute light intensity information, but also light chromaticity information.

For example, when the pixel sensing array is applied to a visual sensor, the solution is beneficial to enable the visual sensor to determine the pixel according to the difference between the electrical signals converted by different first pixel sensing units 10 in each pixel structure 100. The change amount of the light intensity of the light in the first waveband of the region, so as to increase the dynamic range of the image collected by the vision sensor and improve the shooting speed of the vision sensor. The electrical signal converted by the sensing unit 210 determines the color intensity information of the light of the second wavelength band in the pixel area, so as to improve the color reproduction degree and image quality of the image collected by the vision sensor. The technical solution of this embodiment helps to simultaneously obtain high-quality color light intensity signals and high-speed light intensity variation signals through the pixel structure, and enriches the image quality of the image obtained by the pixel structure through the complementation of the two modes of image signals. visual information.

At least one of the first waveband and the second waveband includes an infrared waveband, or at least one of the first waveband and the second waveband includes an ultraviolet waveband, for example, the first waveband includes a visible light waveband and an infrared waveband, and the second waveband includes Visible light waveband; both the first waveband and the second waveband include both the visible light waveband and the infrared waveband; the first waveband includes the visible light waveband and the ultraviolet waveband, and the second waveband includes the visible light waveband; both the first waveband and the second waveband include both the visible light waveband , including the ultraviolet band. The advantage of this setting is that when the first wavelength band and the second wavelength band are different wavelength bands, it is helpful to sense different information in the target light signal through the first pixel sensing unit 10 and the second pixel sensing unit 20, so as to improve the The performance of the vision sensor with the pixel structure and the application scenarios of the vision sensor are broadened. For example, when at least one of the first band and the second band includes an infrared band, the vision sensor can be applied to an infrared camera scene, and the first band When at least one of the second wavelength bands includes an ultraviolet wavelength band, the vision sensor can be applied to an ultraviolet imaging scene.

Optionally, in an embodiment of the present disclosure, the first wavelength band includes an infrared wavelength band; the first pixel sensing unit 10 includes a first photosensitive device, and the first photosensitive device is an infrared photosensitive device.

In some embodiments, the first photosensitive device may be a photodiode (Photo-Diode, PD) capable of converting optical signals into corresponding electrical signals. When the first wavelength band includes an infrared wavelength band, the first photosensitive device may be a photosensitive device sensitive to infrared rays, such as an infrared photodiode. So that the first pixel sensing unit can sense the light intensity change information of infrared rays in the target light signal through the first photosensitive device.

Optionally, in another embodiment of the present disclosure, the first pixel sensing unit 10 includes a second photosensitive device and a first filter device disposed on the second photosensitive device, and the second photosensitive device is an infrared photosensitive device The device and/or the first filter device is an infrared filter device.

In some embodiments, the first filter device is used to select the wavelength band of the light passing through the device, and the first filter device may be a color filter or an optical signal capable of extracting a set component optical lenses, such as Byron lenses. The first filter device can be arranged on the photosensitive surface of the second photosensitive device, so that the target light signal is first irradiated to the surface of the first filter device, and the first filter device can detect the first wavelength band including the infrared wavelength band in the target light signal. The light of the first wavelength band is extracted, so that the light of the first wavelength band is irradiated to the photosensitive surface of the second photosensitive device, and the light signal of the first set wavelength band is converted into a corresponding electrical signal by the second photosensitive device. By setting the second photosensitive device to be an infrared photosensitive device and/or the first filter device to be an infrared filter device in the embodiment of the present disclosure, it is helpful for the first pixel sensing unit to sense the light intensity change information of infrared light in the target light signal.

Optionally, in another embodiment of the present disclosure, the first wavelength band includes an ultraviolet wavelength band; the first pixel sensing unit 10 includes a first photosensitive device, and the first photosensitive device is an ultraviolet photosensitive device. When the first wavelength band includes the ultraviolet wavelength band, the first photosensitive device may be a photosensitive device sensitive to ultraviolet rays, such as an ultraviolet photodiode. So that the first pixel sensing unit 10 can sense the light intensity change information of ultraviolet rays in the target light signal through the first photosensitive device.

Optionally, in another embodiment of the present disclosure, the first pixel sensing unit 10 includes a second photosensitive device and a first filter device disposed on the second photosensitive device, and the second photosensitive device is an ultraviolet photosensitive device The device and/or the first filter device is an ultraviolet filter device. By setting the second photosensitive device to be an ultraviolet photosensitive device and/or the first filter device to be an ultraviolet filter device in the embodiment of the present disclosure, it is helpful for the first pixel sensing unit to sense the light intensity change information of ultraviolet light in the target light signal.

Referring to FIG. 1 , optionally, the second pixel sensing unit 20 includes at least three sub-pixel sensing units 210, and the at least three sub-pixel sensing units 210 are respectively configured to receive light of different color components, and output light representing the corresponding color components An electrical signal of light intensity information.

Exemplarily, each sub-pixel sensing unit 210 in the second pixel sensing unit 20 may include a light-sensing unit and a filter unit, the light of the corresponding color component is extracted by the filter unit, and the light is converted into a representative color component by the light-sensing unit. An electrical signal of light intensity information of its color components. Optionally, the second pixel sensing unit 20 at least includes a sub-pixel sensing unit 210R whose center frequency is red, a sub-pixel sensing unit 210G whose center frequency is green, and a sub-pixel sensing unit 210B whose center frequency is blue.

Among them, the sub-pixel sensing unit 210R whose center frequency is red is the sub-pixel sensing unit that mainly extracts the light of the red component in the light of the second wavelength band and converts it into an electrical signal representing the light intensity information of its color component. unit. The sub-pixel sensing unit 210G whose center frequency is green is the sub-pixel sensing unit that mainly extracts the light of the green component in the light of the second wavelength band and converts it into an electrical signal representing the light intensity information of its color component. The sub-pixel sensing unit 210B whose center frequency is blue, that is, the sub-pixel sensing unit that mainly extracts the light of the blue component in the light of the second wavelength band and converts it into an electrical signal representing the light intensity information of its color component. unit. The advantage of such an arrangement is that the absolute light intensity information and chromaticity information of light of different color components can be acquired with high precision.

Referring to FIG. 1 , on the basis of the above solution, optionally, in the second pixel sensing unit 20 , the sub-pixel sensing unit 210G whose center frequency is green, the sub-pixel sensing unit 210R whose center frequency is red, and the center The number ratio of the sub-pixel sensing units 210B whose frequency is blue is 2:1:1.

For example, when the second pixel sensing unit 20 includes four sub-pixel sensing units, each second pixel sensing unit 20 includes two sub-pixel sensing units 210G whose center frequency is green, and one sub-pixel sensing unit 210G whose center frequency is red. The sub-pixel sensing unit 210R and a sub-pixel sensing unit 210B whose center frequency is blue. In this arrangement, the pixel color light intensity ratios perceived by each pixel structure 100 are: 50% green, 25% red, and 25% blue, and green has the highest ratio, so that demosaicing digital image processing can be used. The algorithm reconstructs a full-color image from the incomplete color samples output by the photosensitive unit covered with the green array. Since the human eye is most sensitive to green, this arrangement can increase the proportion of green sampling, so as to obtain the desired target. image.

Referring to FIGS. 1 to 6 , optionally, in the pixel structure 100, the first pixel sensing unit 10 is used for simulating rod cells, so as to obtain an electrical signal representing the light intensity variation of the light in the first waveband; the second The pixel sensing unit 20 is used for simulating cone cells to acquire electrical signals representing color intensity information of light in the second wavelength band.

In some embodiments, the embodiments of the present disclosure can use the pixel structure 100 to simulate different visual perception cells in the retina of the human eye, and the first pixel sensing unit 10 converts the light of the first wavelength band into electrical light representing its light intensity information. signal, and according to the difference between the electrical signals converted by different first pixel sensing units 10 in each pixel structure 100, determine the electrical signal representing the light intensity variation of the first wavelength band of the pixel area to simulate The rod cells obtain the light intensity gradient information, thereby improving the perception ability of the pixel structure to the dynamic target, and increasing the dynamic range and shooting speed of the image collected by the pixel structure; through the sub-pixel sensing unit 210 in the second pixel sensing unit 20 Converting the light in the second band into an electrical signal representing its color light intensity information to simulate the cone cells to obtain the color light intensity information is beneficial to improve the color reproduction degree and image quality of the image collected by the pixel structure.

Referring to FIG. 1 to FIG. 6, optionally, in the pixel structure 100, the first pixel sensing unit 10 located in the center is used to simulate excitatory rod cells, so as to convert the light in the corresponding area into the light intensity information representing its light intensity. Electrical signals; the other first pixel sensing units 10 are used to simulate inhibitory rod cells to convert the light in the corresponding area into electrical signals representing its light intensity information; the second pixel sensing units 20 are used to simulate cone cells , to convert the light of the corresponding area into an electrical signal representing its light intensity information.

For example, in the pixel structure 100 shown in FIG. 2 , the first pixel sensing unit 10a at the center is used to simulate excitatory rod cells, and the first pixel sensing units 10b at the four corners are used to simulate inhibitory rod cells. cells, the four second pixel sensing units 20 are all used to simulate cone cells; in the pixel structure 100 shown in FIG. 3 , the first pixel sensing unit 10a in the center is used to simulate excitatory rod cells, and is located in the four corners The first pixel sensing units 10b are used to simulate suppressive rod cells, and the two second pixel sensing units 20 located on the upper and lower sides of the first pixel sensing unit 10a are used to simulate cone cells; in FIG. 4 In the pixel structure 100 shown, the first pixel sensing unit 10a located in the center is used to simulate excitatory rod cells, and the first pixel sensing units 10b located at the four corners are used to simulate inhibitory rod cells, and the first pixel sensing units 10b located in the first pixel The two second pixel sensing units 20 on the left and right sides of the sensing unit 10a are both used to simulate cone cells. In addition, FIGS. 1 to 4 all show the case where the pixel structure 100 includes four first pixel sensing units 10b surrounding the first pixel sensing unit 10a, but in practical applications, when the pixel structure 100 may only include When one, two or three of the four first pixel sensing units 10b are used, the first pixel sensing units 10b in the corresponding pixel structure 100 are all used to simulate suppressive rod cells.

For example, when the pixel sensing array is applied to the visual sensor, the visual sensor may associate the value corresponding to the electrical signal converted by the first pixel sensing unit 10a in the center of each pixel structure 100 with the first pixel sensing unit. The electrical signal converted in 10b is subjected to a differential operation to obtain a differential signal, thereby simulating the excitatory rod cells and inhibitory rod cells of the human eye to obtain an electrical signal representing the variation of the light intensity of the light in the pixel area. For example, when the pixel structure 100 includes only one first pixel sensing unit 10b, the visual sensor can directly use the value corresponding to the electrical signal converted by the first pixel sensing unit 10a to the electrical signal converted by the first pixel sensing unit 10b. The corresponding values are differenced to obtain a differential signal. When the pixel structure 100 includes two or more first pixel sensing units 10b, the visual sensor may, according to the value corresponding to the electrical signal converted by the first pixel sensing unit 10a, match the electrical value converted by each first pixel sensing unit 10b with the electrical signal converted by the first pixel sensing unit 10b. The average value of the values corresponding to the signals is subtracted to obtain a differential signal. The visual sensor can also convert the light of the second wavelength band into an electrical signal representing its color light intensity information through the sub-pixel sensing unit 210 in the second pixel sensing unit 20, so as to simulate the cone cells to obtain the color light intensity information.

In addition, since each second pixel sensing unit 20 may include a plurality of sub-pixel sensing units 210 , one first pixel sensing unit 10 may be surrounded by a plurality of sub-pixel sensing units 210 . When the pixel sensing array is applied to the visual sensor, this solution is beneficial to enable the visual sensor to acquire the electrical signal corresponding to the light of the second wavelength band only according to the part of the second pixel sensing unit 20 around the first pixel sensing unit 10, It is not necessary to acquire electrical signals corresponding to the light of the second wavelength band according to all the second pixel sensing units 20 around the first pixel sensing unit 10 . For example, referring to FIG. 3 , the visual sensor can determine the light of the second wavelength band in the pixel area according to the two second pixel sensing units 20 located on the upper and lower sides of the first pixel sensing unit 10a in each pixel structure 100 For the corresponding electrical signals, see FIG. 4 , the visual sensor can determine the second pixel in the pixel area according to the two second pixel sensing units 20 located on the left and right sides of the first pixel sensing unit 10 a in each pixel structure 100 . The advantage of this setting is that the corresponding image processing algorithm can be simplified.

FIG. 6 is a schematic diagram of another pixel structure provided by an embodiment of the present disclosure. In the pixel structure 100, the sub-pixel sensing units 210 surrounding each side edge of the first pixel sensing unit 10 include a red sub-pixel sensing unit 210R, a green sub-pixel sensing unit 210G and a blue sub-pixel sensing unit 210G. In the unit 210B, the center frequency of the sub-pixel sensing units 210 shared by a row of sub-pixel sensing units 210 surrounding each adjacent edge of the first pixel sensing unit 10 and a column of sub-pixel sensing units 210 is the same.

In this embodiment of the present disclosure, the sub-pixel sensing unit 210 surrounding each side edge of the first pixel sensing unit 10 includes a red sub-pixel sensing unit 210R, a green sub-pixel sensing unit 210G and a blue sub-pixel sensing unit 210G. unit 210B, so that the red sub-pixel sensing unit 210R, the green sub-pixel sensing unit 210G and the blue sub-pixel sensing unit 210B surrounding any edge of the first pixel sensing unit 10 in the pixel structure 100 can be used for Obtain the absolute light intensity information and chromaticity information of the light of different color components in the pixel area, so as to improve the convenience of obtaining image information. A row of sub-pixel sensing units 210 surrounding each adjacent edge of the first pixel sensing unit 10 and a sub-pixel sensing unit 210 shared by a column of sub-pixel sensing units 210 , that is, the sub-pixel sensing units located at the four corners of the pixel structure 100 210, which can be both the red sub-pixel sensing unit 210R, the green sub-pixel sensing unit 210G, or the blue sub-pixel sensing unit 210B. In the case where the sub-pixel sensing units 210 are both blue sub-pixel sensing units 210B, in this solution, a row of sub-pixel sensing units 210 and a column of sub-pixel sensing units surrounding each adjacent edge of the first pixel sensing unit 10 are arranged The sub-pixel sensing units 210 shared by 210 have the same center frequency, which can realize the multiplexing of the sub-pixel sensing units 210 located at the four corners of the pixel structure 100 to improve the pixel fill factor of the pixel sensing array.

In some embodiments, a row of sub-pixel sensing units 210 surrounding each adjacent edge of the first pixel sensing unit 10 and a sub-pixel sensing unit 210 shared by a column of sub-pixel sensing units 210 are all blue sub-pixel sensing units The unit 210B, each sub-pixel sensing unit 210 surrounding the first pixel sensing unit 10 is arranged in a center-symmetrical manner with respect to the pixel structure 100, and in the pixel structure 100, the red sub-pixel sensing unit 210R and the green sub-pixel sensing unit 210R The number ratio of the unit 210G to the blue sub-pixel sensing unit 210B is 1:1:1.

By way of example, one second pixel sensing unit 20 includes twelve sub-pixel sensing units 210 as an example for description. Each side edge of the first pixel sensing unit 10 is provided with four sub-pixel sensing units 210 correspondingly, and the sub-pixel sensing units 210 located at the four corners of the pixel structure 100 are also the blue sub-pixel sensing units 210B. , since each sub-pixel sensing unit 210 is centrally symmetrically arranged with respect to the pixel structure 100, and the number ratio of the red sub-pixel sensing unit 210R, the green sub-pixel sensing unit 210G and the blue sub-pixel sensing unit 210B is 1 : 1:1, so that among the four sub-pixel sensing units 210 disposed corresponding to each side edge of the first pixel sensing unit 10, the two sub-pixel sensing units 210 on both sides are blue sub-pixel sensing units 210B, one of the two sub-pixel sensing units 210 in the middle is a red sub-pixel sensing unit 210R, and the other is a green sub-pixel sensing unit 210G. The advantage of this arrangement is that there are three consecutive sub-pixel sensing units in a column from the sub-pixel sensing unit 210 in the upper right corner of the pixel structure 100 , and a row from the sub-pixel sensing unit 210 in the lower right corner of the pixel structure 100 Three consecutive sub-pixel sensing units, a column of three consecutive sub-pixel sensing units from the sub-pixel sensing unit 210 in the lower left corner of the pixel structure 100, and a sub-pixel sensing unit from the upper left corner of the pixel structure 100 A row of three consecutive sub-pixel sensing units from unit 210, wherein every three consecutive sub-pixel sensing units 210 includes a red sub-pixel sensing unit 210R, a green sub-pixel sensing unit 210G and a blue sub-pixel Sensing unit 210B, and every three consecutive sub-pixel sensing units 210 can be used to obtain absolute light intensity information and chromaticity information of light of different color components in the pixel area, so as to improve the convenience of obtaining image information .

In the embodiment of the present disclosure, the sub-pixel sensing unit 210 includes a sub-sensing device and a second filter device disposed on the sub-sensing device, and the filter colors of the second filter devices in the at least three sub-pixel sensing units 210 different.

In some embodiments, the sub-sensing device may be a photodiode capable of converting an optical signal into a corresponding electrical signal. The second filter device is used to select the wavelength band of the light passing through the device, and the first filter device may be a color filter, or an optical lens capable of extracting a set component of the optical signal, such as a Byron lens. The second optical filter device can be arranged on the photosensitive surface of the sub-photosensitive device. After the second optical filter device extracts the optical signal of the second wavelength band in the target optical signal, the sub-photosensitive device can convert the light of the second wavelength band into the corresponding electrical light. Signal.

For example, when the second pixel sensing unit 20 includes a sub-pixel sensing unit 210R whose center frequency is red, a sub-pixel sensing unit 210G whose center frequency is green, and a sub-pixel sensing unit 210B whose center frequency is blue, The second filter devices corresponding to the sub-pixel sensing unit 210R whose center frequency is red, the sub-pixel sensing unit 210G whose center frequency is green, and the sub-pixel sensing unit 210B whose center frequency is blue are red, green, and blue, respectively. color second filter device. When the target light signal is irradiated to the second pixel sensing unit 20 , the second filter devices in the four sub-pixel sensing units respectively affect the light signal in the red band, the light signal in the green band and the light signal in the blue band in the target light signal. The optical signal is extracted, so that the sub-photosensitive device in the second pixel sensing unit 20 can convert the optical signal of the corresponding wavelength band into the corresponding electrical signal. The second pixel sensing unit 20 realizes high-precision acquisition of absolute light intensity information and chromaticity information of the light signals of different components by sensing the light signals of different components in the target light signal.

Optionally, based on the above solution, when the second wavelength band includes an infrared wavelength band, the second filter device includes an infrared filter device. In this way, the second pixel sensing unit 20 can not only sense the light signal of the red light component, the light signal of the green light component and the light signal of the blue light component in the target light signal, but also can sense the light signal of the infrared component, which improves the pixel structure. The perception ability of infrared color light intensity information in the target light signal. Optionally, when the second wavelength band includes an ultraviolet wavelength band, the second filter device includes an ultraviolet filter device. In this way, the second pixel sensing unit 20 can not only sense the light signal of the red light component, the light signal of the green light component and the light signal of the blue light component in the target light signal, but also the light signal of the ultraviolet component, which improves the pixel structure. The perception ability of the color light intensity information of ultraviolet light in the target light signal.

Referring to FIGS. 1 , 2 and 3 , on the basis of the above solution, optionally, when the pixel structure 100 includes the second pixel sensing units 20 on the upper and lower sides of the first pixel sensing unit 10 a located in the center, The two pixel structures 100 adjacent in the direction share the second pixel sensing unit 20 between the two centrally located first pixel sensing units 10a. The advantage of this arrangement is that in each column of pixel structures, the multiplexing of the second pixel sensing units in adjacent pixel structures is realized. For example, the pixel structure 100 can determine and characterize the pixel area according to its own second pixel sensing unit 20 . The color light intensity signal of the light, wherein the second pixel sensing unit 20 located under the first pixel sensing unit 10a may also be the second pixel sensing unit in the adjacent pixel structure 100a, so as to realize the second pixel sensing unit 20 in the adjacent pixel structure 100a. The multiplexing of the pixel sensing units 20, and this arrangement is also beneficial to improve the pixel fill factor of the pixel sensing array.

FIG. 7 is a schematic structural diagram of a pixel sensing array provided by an embodiment of the present disclosure. The pixel sensing array may include the pixel structure 100 shown in FIG. 5 or FIG. 6 . Referring to FIGS. 5 to 7 , a plurality of pixel structures 100 are arranged in an array to form a pixel sensing array; any two adjacent pixel structures 100 share an adjacent row or column of sub-pixel sensing units 210 .

In some embodiments, each pixel structure 100 in the pixel sensing array may correspond to one pixel in the image, so that each pixel structure 100 is sensed by the first pixel sensing unit 10 and the second pixel sensing unit 100 therein. The unit 20 converts the optical signals in the corresponding pixel regions into corresponding electrical signals.

Wherein, any two adjacent pixel structures 100 share two adjacent rows or one column of sub-pixel sensing units 210, which means that any two adjacent pixel structures 100 in each row share one adjacent one of the two adjacent pixel structures 100. A column of sub-pixel sensing units 210 , that is, the column of sub-pixel sensing units 210 belongs to two adjacent pixel structures 100 at the same time, and both adjacent pixel structures 100 can use this column of sub-pixel sensing units 210 to receive the second wavelength band. light, and any two adjacent pixel structures 100 in each column share two adjacent rows of sub-pixel sensing units 210 , that is, the sub-pixel sensing units 210 in this row belong to two adjacent pixel structures 100 at the same time. Among them, two adjacent pixel structures 100 can use the row of sub-pixel sensing units 210 to receive light of the second wavelength band. For example, in the pixel structure 100 in the first row of the pixel sensing array, the first pixel structure 100 and the second pixel structure 100 share a column of sub-pixel sensing units 210 adjacent to the two, that is, located in the first pixel. A column of sub-pixel sensing units 210 on the right side of the first pixel sensing unit 10 of the structure 100 can be shared by the first pixel structure 100 and the second pixel structure 100, and the pixel structure 100 in the first column of the pixel sensing array , the first pixel structure 100 and the second pixel structure 100 share a row of sub-pixel sensing units 210 adjacent to the two, that is, a row of sub-pixels located below the first pixel sensing unit 10 of the first pixel structure 100 The sensing unit 210 may be shared by the first pixel structure 100 and the second pixel structure 100 . The advantage of this arrangement is that it not only realizes the multiplexing of sub-pixel sensing units in adjacent pixel structures, but also helps to improve the pixel fill factor of the pixel sensing array.

An embodiment of the present disclosure further provides a visual sensor. FIG. 8 is a schematic diagram of a module structure of a visual sensor provided by an embodiment of the present disclosure. With reference to FIGS. 1 and 8 , the visual sensor provided by the embodiment of the present disclosure includes a sensing control unit. 30 and the pixel sensing array provided by any of the above embodiments of the present disclosure; the sensing control unit 30 is electrically connected to the first pixel sensing unit 10 and the second pixel sensing unit 20, and the sensing control unit 30 is used to detect the first pixel The electrical signals obtained by the sensing unit 10 and the second pixel sensing unit 20 are processed.

For example, the first pixel sensing unit 10 can extract the light of the first wavelength band in the target light signal, and convert the light of the first wavelength band into a corresponding electrical signal, and the second pixel sensing unit 20 can pass the sub-pixels therein. The sensing unit 210 extracts the light of the second wavelength band in the target light signal, and converts the light of the second wavelength band into a corresponding electrical signal, the sensing control unit 30 can convert the electrical signal of the first pixel sensing unit 10, and The electrical signal converted by the sub-pixel sensing unit 210 in the second pixel sensing unit 20 is processed to obtain image information of the pixel area corresponding to the pixel structure.

The visual sensor provided by the embodiments of the present disclosure includes the pixel sensing array provided by any of the above embodiments of the present disclosure. Therefore, the visual sensor has the corresponding functional structure and beneficial effects of the pixel sensing array, which will not be repeated here.

Referring to FIGS. 1 to 5 , on the basis of the above solution, optionally, the pixel sensing array includes at least one pixel structure 100 , and the pixel structure 100 includes a first pixel sensing unit 10 surrounding the first pixel sensing unit. At least two of the four second pixel sensing units 20 of the 10, and at least one of the four first pixel sensing units 10 surrounding the first pixel sensing unit 10; the first pixel sensing unit 10 also It is used to convert the light of the first wavelength band into an electrical signal representing its light intensity information; the second pixel sensing unit 20 is also used to convert the light of the second wavelength band into an electrical signal representing its color light intensity information; accordingly, The sensing control unit 30 is configured to generate an optical signal representing the first wavelength band according to the difference between the electrical signals converted by the first pixel sensing unit 10 located in the center and the other first pixel sensing units 10 in the pixel structure 100 . An electrical signal of the amount of change in light intensity.

For example, the sensing control unit 30 may perform a differential operation on the value corresponding to the electrical signal converted by the first pixel sensing unit 10a in the center of each pixel structure 100 and the electrical signal converted by the first pixel sensing unit 10b, In order to obtain differential signals, the excitatory rod cells and inhibitory rod cells of the human eye can be simulated to obtain electrical signals representing the change of light intensity of the light in the pixel area, so as to improve the visual sensor's ability to perceive dynamic targets and increase the The dynamic range of the images captured by the vision sensor and improve the shooting speed of the vision sensor. For example, when the pixel structure 100 includes only one first pixel sensing unit 10b, the sensing control unit 30 may directly correspond to the value of the electrical signal converted by the first pixel sensing unit 10a, and the first pixel sensing unit 10b The values corresponding to the converted electrical signals are subtracted to obtain a differential signal. When the pixel structure 100 includes two or more first pixel sensing units 10b, the sensing control unit 30 may, according to the value corresponding to the electrical signal converted by the first pixel sensing unit 10a, correspond with each of the first pixel sensing units 10b The average value of the values corresponding to the converted electrical signals is subtracted to obtain a differential signal.

Referring to FIG. 1 to FIG. 5 , on the basis of the above solution, optionally, the sensing control unit 30 is further configured to use the electrical signal representing the light intensity variation of the light signal in the first wavelength band, and at least one of the pixel structures 100 . The two second pixel sensing units 20 convert electrical signals representing color intensity information of light in the second wavelength band to generate image signals.

For example, the sensing control unit 30 can also convert the light of the second wavelength band into an electrical signal representing its color light intensity information through the sub-pixel sensing unit 210 in the second pixel sensing unit 20, so as to simulate the acquisition of cone cells. Color light intensity information. The sensing control unit 30 may acquire the electrical signal corresponding to the light of the second wavelength band only according to a part of the second pixel sensing unit 20 around the first pixel sensing unit 10 , but not necessarily according to all the surrounding areas of the first pixel sensing unit 10 . The second pixel sensing unit 20 obtains the electrical signal corresponding to the light of the second wavelength band. For example, the visual sensor can be based on the two second pixel sensing units 20 on the left and right of the first pixel sensing unit 10 in each pixel structure 100, or The upper and lower second pixel sensing units 20 are used to determine the electrical signal corresponding to the light of the second wavelength band in the pixel area. The advantage of this setting is that the corresponding image processing algorithm can be simplified. The technical solution of this embodiment helps to simultaneously obtain high-quality color light intensity signals and high-speed light intensity variation signals through the pixel structure, and the color light intensity signals and The light intensity variation signal obtains the image signal of the corresponding pixel area, thereby enriching the visual information of the image acquired by the vision sensor.

FIG. 9 is a schematic structural diagram of a repeating unit provided by an embodiment of the present disclosure, and the repeating unit may be a repeating unit in the pixel sensing array shown in FIG. 7 . Referring to FIGS. 5 to 9 , optionally, the first pixel sensing unit 10 is also used to convert the light of the first wavelength band into an electrical signal representing its light intensity information; the second pixel sensing unit 20 is also used to The two-band light is converted into an electrical signal representing its color and light intensity information; a plurality of pixel structures 100 are arranged in an array to form a pixel sensing array; any two adjacent pixel structures 100 share the adjacent row or One column of sub-pixel sensing units 210; there are multiple repeating units in the pixel sensing array, and each repeating unit includes one pixel structure 100 located in the center of the pixel structures 100 in three rows and three columns, and four pixel structures 100 located at the four corners ; The sensing control unit 30 is used for at least one of the first pixel sensing units 10 (ie, the first pixel sensing units 10b ) located at the four corners of the repeating unit, and the first pixel sensing unit 10 located at the center (ie, the first pixel sensing unit 10 b ) The difference between the electrical signals converted by the first pixel sensing unit 10a) generates an electrical signal representing the variation of the light intensity of the light signal in the first wavelength band.

FIG. 7 shows the case where the pixel structure 100 of the even-numbered rows includes the first pixel sensing unit 10a, and the pixel structure 100 of the odd-numbered rows includes the first pixel sensing unit 10b in the pixel sensing array, that is, the pixels of the even-numbered rows of the pixel sensing array In the case where the structure 100 is the pixel structure 100 located in the center in the repeating unit, in practical applications, in any pixel structure 100 with three rows and three columns in the pixel sensing array, one pixel structure 100 located in the center and four pixels located at the four corners Each of the structures 100 can constitute a repeating unit, and the sensing control unit 30 can convert the value corresponding to the electrical signal converted by the first pixel sensing unit 10a in the pixel structure 100 located in the center of each repeating unit to the value corresponding to the electrical signal located at the four corners. The electrical signal converted by the first pixel sensing unit 10b in the pixel structure 100 is subjected to a differential operation to obtain a differential signal, thereby simulating the excitatory rod cells and inhibitory rod cells of the human eye to obtain the light characteristic of the pixel area. The electrical signal of the light intensity change can improve the perception ability of the vision sensor for dynamic targets, increase the dynamic range of the image collected by the vision sensor, and improve the shooting speed of the vision sensor.

For example, the sensing control unit 30 may make a difference between the value corresponding to the electrical signal converted by the first pixel sensing unit 10a and the value corresponding to the electrical signal converted by any one of the four first pixel sensing units 10b, to obtain a differential signal; or, the sensing control unit 30 corresponds to the electrical signal converted by any two of the four first pixel sensing units 10b according to the value corresponding to the electrical signal converted by the first pixel sensing unit 10a. The average value of the values is subtracted to obtain a differential signal; or, the sensor control unit 30 can compare the value corresponding to the electrical signal converted by the first pixel sensing unit 10a with any three of the four first pixel sensing units 10b. The average value of the values corresponding to the converted electrical signals is subtracted to obtain a differential signal; The average value of the values corresponding to the electrical signals converted by the unit 10b is differentiated to obtain a differential signal.

5 to 9 , optionally, in the row direction of the pixel sensing array, two repeating units that are spaced apart share two first pixel sensing units 10 in two adjacent pixel structures 100; In the column direction of the pixel sensing array, adjacent repeating units share the first pixel sensing unit 10 in the two adjacent pixel structures 100 .

In FIG. 7 , the three repeating units in the pixel sensing array are highlighted with bold lines, that is, two repeating units in the pixel structure 100 in the first three rows and two repeating units in the pixel structure 100 in the last three rows. Three repeating units are used as an example to illustrate. For example, in the row direction of the pixel sensing array, the two repeating units that are spaced apart refer to the first and third repeating units in the pixel structure 100 in the first three rows, wherein the first repeating unit refers to the first repeating unit. The second pixel structure 100 in the second row is the repeating unit, and the third repeating unit refers to the repeating unit centered on the fourth pixel structure 100 in the second row. A repeating unit is separated from each other, that is, the repeating unit centered on the third pixel structure 100 of the second row. In the row direction of the pixel sensing array, the two spaced repeating units share the two first pixel sensing units 10b in the two adjacent pixel structures 100, that is, the first pixel structures 100 in the first three rows of pixel structures 100. The first and third repeating units share the first pixel sensing unit 10b in the two pixel structures 100 on the right side of the first repeating unit. These two first pixel sensing units 10b are also the third repeating unit. The first pixel sensing units 10b in the two pixel structures 100 on the left are the first pixel sensing units 10b in the first pixel structure 100 in the third column and the third column in the pixel sensing array. When the first repeating unit in the pixel structure 100 in the first three rows obtains a differential signal according to the first pixel sensing unit 10a and the two first pixel sensing units 10b on the right, the first repeating unit in the pixel structure 100 in the first three rows The three repeating units can also obtain differential signals according to the two first pixel sensing units 10b and their own first pixel sensing units 10a, so as to obtain the light intensity variation of the optical signal representing the first wavelength band in the corresponding pixel area electrical signal.

Similarly, in the column direction of the pixel sensing array, the two repeating units that are spaced apart refer to the first and third repeating units in the first three columns (three columns from the left) of the pixel structure 100, wherein, The first repeating unit refers to the repeating unit centered on the second pixel structure 100 of the second row, the third repeating unit refers to the repeating unit centered on the second pixel structure 100 of the fourth row, the first There is one repeating unit between the first and the third repeating unit, that is, the repeating unit centered on the second pixel structure 100 of the third row. In the column direction of the pixel sensing array, the two spaced repeating units share the two first pixel sensing units 10b in the two adjacent pixel structures 100, that is, the first pixel structures 100 in the first three columns of pixel structures 100. The first and third repeating units share the first pixel sensing unit 10b in the two pixel structures 100 below the first repeating unit. These two first pixel sensing units 10b are also the third repeating unit. The first pixel sensing units 10b in the upper two pixel structures 100 are the first pixel sensing units 10b in the first pixel structure 100 in the third row and the third row of the pixel sensing array. When the first repeating unit in the first three-column pixel structure 100 acquires a differential signal according to the first pixel sensing unit 10a and the two lower first pixel sensing units 10b, the third pixel structure 100 in the first three-column Each repeating unit can also obtain differential signals according to the two first pixel sensing units 10b and its own first pixel sensing unit 10a, so as to obtain the variation of the light intensity of the light signal representing the first wavelength band in the corresponding pixel area. electric signal. The advantage of this setting is that it is not only possible to simulate the excitatory rod cells and inhibitory rod cells of the human eye through the repeating unit to obtain an electrical signal representing the light intensity change of the light in the pixel area, so as to improve the visual sensor's ability to respond to dynamic targets. Perception ability, increase the dynamic range of the image collected by the vision sensor, improve the shooting speed of the vision sensor, and also help to improve the pixel fill factor of the pixel sensor array.

Optionally, the sensing control unit 30 is also used for the electrical signal representing the light intensity variation of the light signal of the first wavelength band, and the light representing the second wavelength band converted by the second pixel sensing unit 20 in the repeating unit. An electrical signal of color and light intensity information to generate an image signal.

For example, the sensing control unit 30 can also convert the light of the second wavelength band into an electrical signal representing its color light intensity information through the sub-pixel sensing unit 210 in the second pixel sensing unit 20, so as to simulate the acquisition of cone cells. Color light intensity information. Preferably, the sensing control unit 30 may, according to the numerical value corresponding to the electrical signal converted by the first pixel sensing unit 10a in each repeating unit, correspond to the numerical value corresponding to the electrical signal converted by the four first pixel sensing units 10b The average value is subtracted to obtain a differential signal, thereby generating an electrical signal representing the light intensity variation of the optical signal in the first wavelength band, and through each sub-pixel sensing unit 210 surrounding the first pixel sensing unit 10a in the repeating unit. The light in the second band is converted into electrical signals representing its color light intensity information, so as to obtain high-quality color light intensity signals and high-speed light intensity variation signals simultaneously through the repeating unit, and through the sensing control unit according to each repeating unit. The acquired color light intensity signal and light intensity variation signal obtain the image signal of the corresponding pixel area, thereby enriching the visual information of the image acquired by the vision sensor.

Note that the above are only preferred embodiments of the present disclosure and applied technical principles. Those skilled in the art will understand that the present disclosure is not limited to the specific embodiments herein, and various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the protection scope of the present disclosure. Therefore, although the present disclosure has been described in detail through the above embodiments, the present disclosure is not limited to the above embodiments, and can also include more other equivalent embodiments without departing from the concept of the present disclosure. The scope is determined by the scope of the appended claims.

Claims

A pixel sensing array, characterized in that it includes a pixel structure, and the pixel structure includes:

a first pixel sensing unit and a second pixel sensing unit, wherein the first pixel sensing unit is used for receiving light of the first wavelength band, and the second pixel sensing unit is used to receive light of the second wavelength band;

The second pixel sensing unit includes a plurality of sub-pixel sensing units, and at least two of the sub-pixel sensing units are disposed adjacent to the first pixel sensing unit.
The pixel sensing array according to claim 1, wherein the first pixel sensing units and the second pixel sensing units are alternately arranged in an array.
The pixel sensing array according to claim 2, wherein the photosensitive area of the second pixel sensing unit is equal to the photosensitive area of the first pixel sensing unit.
The pixel sensing array according to claim 2, wherein the pixel structure comprises one first pixel sensing unit, four second pixel sensing units surrounding the first pixel sensing unit At least two of the sensing units, and at least one of the four first pixel sensing units surrounding the first pixel sensing unit.
The pixel sensing array according to claim 4, wherein the pixel structure comprises two of the second pixel sensing units, and the two second pixel sensing units are the second pixel sensing units located in the center The second pixel sensing units on the left and right sides of a pixel sensing unit, or the second pixel sensing units on the upper and lower sides.
The pixel sensing array according to claim 4, wherein when the pixel structure includes the second pixel sensing units on the left and right sides of the first pixel sensing unit located in the center, they are in phase with each other in the row direction. two adjacent pixel structures share the second pixel sensing unit located between the first pixel sensing units in the center;

When the pixel structure includes the second pixel sensing units on the upper and lower sides of the first pixel sensing unit located in the center, the two adjacent pixel structures in the column direction share the two pixel structures located in the center. the second pixel sensing unit between the first pixel sensing units;

In the pixel structure, the first pixel sensing units other than the first pixel sensing unit located in the center are shared by the pixel structure where the pixel structure is located and the pixel structure adjacent to the pixel structure.
The pixel sensing array according to claim 1, wherein the plurality of sub-pixel sensing units adjacent to the first pixel sensing unit are arranged around the first pixel sensing unit.
The pixel sensing array according to claim 7, wherein the photosensitive area of the sub-pixel sensing unit is smaller than the photosensitive area of the first pixel sensing unit.
The pixel sensing array according to claim 7, wherein each of the pixel structures comprises one of the first pixel sensing units and one of the second pixel sensing units;

The plurality of sub-pixel sensing units surround the four side edges of the first pixel sensing unit, and the number of the sub-pixel sensing units surrounding each side edge of the first pixel sensing unit is equal and surrounding A row of the sub-pixel sensing units on adjacent edges of the first pixel sensing unit is connected to a column of the sub-pixel sensing units, and shares one of the sub-pixel sensing units.
The pixel sensing array according to claim 4 or 9, wherein the first pixel sensing unit is further configured to convert the light of the first wavelength band into an electrical signal representing its light intensity information;

The second pixel sensing unit is also used to convert the light of the second wavelength band into an electrical signal representing its color light intensity information;

Wherein, at least one of the first waveband and the second waveband includes an infrared waveband; or, at least one of the first waveband and the second waveband includes an ultraviolet waveband.
The pixel sensing array according to claim 10, wherein the first wavelength band includes an infrared wavelength band; the first pixel sensing unit includes a first photosensitive device, and the first photosensitive device is an infrared photosensitive device;

Alternatively, the first pixel sensing unit includes a second photosensitive device and a first filter device disposed on the second photosensitive device, and the second photosensitive device is an infrared photosensitive device and/or the first photosensitive device The filter device is an infrared filter device.
The pixel sensing array according to claim 10, wherein the first wavelength band includes an ultraviolet wavelength band; the first pixel sensing unit includes a first photosensitive device, and the first photosensitive device is an ultraviolet photosensitive device;

Alternatively, the first pixel sensing unit includes a second photosensitive device and a first filter device disposed on the second photosensitive device, and the second photosensitive device is an ultraviolet photosensitive device and/or the first photosensitive device The filter device is an ultraviolet filter device.
The pixel sensing array according to claim 4 or 9, wherein the second pixel sensing unit comprises at least three of the sub-pixel sensing units, and the at least three sub-pixel sensing units respectively use It is used for receiving light of different color components, and outputting electrical signals representing the light intensity information of the corresponding color components.
The pixel sensing array according to claim 13, wherein the second pixel sensing unit comprises at least a sub-pixel sensing unit whose center frequency is red, a sub-pixel sensing unit whose center frequency is green, and a center frequency It is a blue sub-pixel sensing unit.
The pixel sensing array according to claim 13, wherein, in the pixel structure, the first pixel sensing unit is used to simulate rod cells to obtain light representing the light of the first wavelength band Strongly varying electrical signals;

The second pixel sensing unit is used for simulating cone cells to obtain electrical signals representing color and intensity information of light in the second wavelength band.
The pixel sensing array according to claim 15, wherein in the pixel structure, the first pixel sensing unit located in the center is used to simulate excitatory rod cells, so as to convert the light in the corresponding area is an electrical signal characterizing its light intensity information; the other first pixel sensing units are used to simulate inhibitory rod cells, so as to convert the light in the corresponding area into an electrical signal characterizing its light intensity information; the second pixel The sensing unit is used to simulate cone cells to convert light in the corresponding area into electrical signals that characterize information about its light intensity.
The pixel sensing array according to claim 15, wherein, in the pixel structure, the sub-pixel sensing units surrounding each side edge of the first pixel sensing unit include a center frequency of A red sub-pixel sensing unit, a sub-pixel sensing unit whose center frequency is green, and a sub-pixel sensing unit whose center frequency is blue, and a row of the sub-pixels surrounding each adjacent edge of the first pixel sensing unit The center frequency of the sub-pixel sensing units shared by the sensing unit and a column of the sub-pixel sensing units is the same.
The pixel sensing array according to claim 11 or 12, wherein the sub-pixel sensing unit comprises a sub-sensing device and a second filter device disposed on the sub-sensing device, at least three of the The filter colors of the second filter elements in the sub-pixel sensing units are different.
The pixel sensing array according to claim 18, wherein the second wavelength band includes an infrared wavelength band, and the second filter device includes an infrared filter device; or, the second wavelength band includes an ultraviolet wavelength band, and the The second filter device includes an ultraviolet filter device.
The pixel sensing array according to claim 9, wherein a plurality of the pixel structures are arranged in an array to form a pixel sensing array; any two adjacent pixel structures share two adjacent pixel structures. A row or column of the sub-pixel sensing units.
A visual sensor, characterized in that it comprises a sensing control unit and the pixel sensing array according to any one of claims 1-20;

The sensing control unit is electrically connected to the first pixel sensing unit and the second pixel sensing unit, and the sensing control unit is used for monitoring the first pixel sensing unit and the second pixel sensing unit. The electrical signals obtained by the sensing unit are processed.
The vision sensor according to claim 21, wherein the pixel sensing array comprises at least one pixel structure, and the pixel structure comprises one of the first pixel sensing units, and the first pixel sensing unit surrounds the first pixel sensing unit. At least two of the four second pixel sensing units of the unit, and at least one of the four first pixel sensing units surrounding the first pixel sensing unit; the first pixel The sensing unit is also used to convert the light of the first wavelength band into an electrical signal representing its light intensity information; the second pixel sensing unit is also used to convert the light of the second wavelength band to light representing its color Electrical signals of strong information;

The sensing control unit is configured to generate, according to the difference between the electrical signals converted by the first pixel sensing unit located in the center and the other first pixel sensing units in the pixel structure, representing the The electrical signal of the light intensity variation of the optical signal in the first band.
The visual sensor according to claim 22, characterized in that, the sensing control unit is further configured to: according to the electrical signal representing the light intensity variation of the light signal in the first wavelength band, and at least one of the pixel structures The two second pixel sensing units convert the electrical signals representing the color intensity information of the light in the second wavelength band to generate an image signal.
The vision sensor according to claim 21, wherein the first pixel sensing unit is further configured to convert the light of the first wavelength band into an electrical signal representing its light intensity information; the second pixel transmits The sensing unit is also used to convert the light of the second wavelength band into electrical signals representing its color light intensity information; a plurality of the pixel structures are arranged in an array to form a pixel sensing array; any two adjacent The pixel structures share two adjacent rows or columns of the sub-pixel sensing units;

The pixel sensing array has a plurality of repeating units, and each repeating unit includes one of the pixel structures located in the center of the pixel structures in three rows and three columns, and four pixel structures located at the four corners; The sensing control unit is used for at least one of the first pixel sensing units located at the four corners of the repeating unit and the electrical signal converted by the first pixel sensing unit located at the center. The difference is generated to generate an electrical signal representing the variation of the light intensity of the light signal in the first wavelength band.
The visual sensor according to claim 24, wherein, in the row direction of the pixel sensing array, the two repeating units that are spaced apart share two of the two adjacent pixel structures. the first pixel sensing unit; in the column direction of the pixel sensing array, the two repeating units that are spaced apart share the first pixel sensor in the two adjacent pixel structures; sense unit.
The visual sensor according to claim 24, characterized in that, the sensing control unit is further configured to: based on the electrical signal representing the light intensity variation of the light signal in the first wavelength band, and all the repeating units in the repeating unit. The second pixel sensing unit converts the electrical signal representing the color intensity information of the light in the second wavelength band to generate an image signal.