CN113038046A - Pixel sensing array and vision sensor - Google Patents
Pixel sensing array and vision sensor Download PDFInfo
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- CN113038046A CN113038046A CN202110310300.XA CN202110310300A CN113038046A CN 113038046 A CN113038046 A CN 113038046A CN 202110310300 A CN202110310300 A CN 202110310300A CN 113038046 A CN113038046 A CN 113038046A
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Abstract
The embodiment of the invention discloses a pixel sensing array and a visual sensor. The pixel sensing array includes a pixel structure, the pixel structure including: the light source comprises a first pixel sensing unit and a second pixel sensing unit, wherein the first pixel sensing unit is used for receiving light rays of a first wave band, and the second pixel sensing unit is used for receiving light rays of a second wave band; the second pixel sensing unit comprises a plurality of sub-pixel sensing units which are arranged around the first pixel sensing unit. The technical scheme of the invention is beneficial to acquiring different types of image information through the visual sensor comprising the pixel sensing array so as to improve the performance of the visual sensor, widen the application scene of the visual sensor, and also is beneficial to improving the pixel integration level of the pixel sensing array so as to improve the image quality acquired by the visual sensor.
Description
Technical Field
The embodiment of the invention relates to the technical field of image sensing, in particular to a pixel sensing array and a visual sensor.
Background
The visual Sensor is an instrument for acquiring image information of an external environment by using an optical element and an imaging device, and currently, a visual Sensor in the prior art can acquire only one type of image information, for example, the prior visual Sensor includes an Active Pixel Sensor (APS) and a Dynamic Visual Sensor (DVS), the Active Pixel Sensor mainly senses color information, and the Dynamic visual Sensor mainly senses a change in light intensity.
However, the prior art lacks a sensor capable of simultaneously acquiring two kinds of image information, and the performance and application of the vision sensor are limited. In addition, the vision sensor generally obtains image information through a pixel array formed by photosensitive devices, however, the pixel integration degree of the existing vision sensor is low, and the image quality obtained by the vision sensor is affected.
Disclosure of Invention
The embodiment of the invention provides a pixel sensing array and a visual sensor, which are used for improving the performance of the visual sensor, widening the application scene of the visual sensor and improving the pixel integration level of the pixel sensing array.
In a first aspect, an embodiment of the present invention provides a pixel sensing array, including a pixel structure, where the pixel structure includes:
the light source comprises a first pixel sensing unit and a second pixel sensing unit, wherein the first pixel sensing unit is used for receiving light rays of a first wave band, and the second pixel sensing unit is used for receiving light rays of a second wave band;
the second pixel sensing unit comprises a plurality of sub-pixel sensing units which are arranged around the first pixel sensing unit.
Optionally, a photosensitive area of the sub-pixel sensing unit is smaller than a photosensitive area of the first pixel sensing unit.
Optionally, each of the pixel structures includes one of the first pixel sensing units and one of the second pixel sensing units;
the plurality of sub-pixel sensing units surround the four side edges of the first pixel sensing unit, the number of the sub-pixel sensing units surrounding each side edge of the first pixel sensing unit is equal, and one row of the sub-pixel sensing units surrounding the adjacent edge of the first pixel sensing unit is connected with one column of the sub-pixel sensing units and shares one sub-pixel sensing unit.
Optionally, the first pixel sensing unit is further configured to convert the light in the first wavelength band into an electrical signal representing light intensity information of the light; the second pixel sensing unit is also used for converting the light rays in the second wave band into electric signals representing the color light intensity information of the light rays;
at least one of the first and second bands comprises an infrared band; alternatively, at least one of the first and second wavelength bands comprises an ultraviolet band.
Optionally, the plurality of sub-pixel sensing units include at least three sub-pixel sensing units, and the at least three sub-pixel sensing units are respectively configured to receive light beams of different color components and output electrical signals representing light intensity information of corresponding color components.
Optionally, in the pixel structure, the first pixel sensing unit is configured to simulate a rod cell to obtain an electrical signal representing a variation of light intensity of the light of the first wavelength band;
the second pixel sensing unit is used for simulating cone cells so as to obtain an electric signal representing the color and light intensity information of the light rays with the second wave band.
Optionally, the second pixel sensing units at least include sub-pixel sensing units with a red center frequency, sub-pixel sensing units with a green center frequency, and sub-pixel sensing units with a blue center frequency.
Optionally, in the pixel structure, the sub-pixel sensing units surrounding each side edge of the first pixel sensing unit include a sub-pixel sensing unit with a red center frequency, a sub-pixel sensing unit with a green center frequency, and a sub-pixel sensing unit with a blue center frequency, and a row of the sub-pixel sensing units surrounding each adjacent edge of the first pixel sensing unit has the same center frequency as the sub-pixel sensing units shared by a column of the sub-pixel sensing units.
Optionally, the first band comprises an infrared band; the first pixel sensing unit comprises a first photosensitive device, and the first photosensitive device is an infrared photosensitive device; or, the first pixel sensing unit includes a first photosensitive device and a first filter device disposed on the first photosensitive device, and the first photosensitive device is an infrared photosensitive device and/or the first filter device is an infrared filter device;
alternatively, the first band comprises an ultraviolet band; the first pixel sensing unit comprises a first photosensitive device, and the first photosensitive device is an ultraviolet photosensitive device; or, the first pixel sensing unit comprises a first photosensitive device and a first light filtering device arranged on the first photosensitive device, and the first photosensitive device is an ultraviolet photosensitive device and/or the first light filtering device is an ultraviolet light filtering device.
Optionally, the sub-pixel sensing units include a second photosensitive device and a second filter device disposed on the second photosensitive device, and filter colors of the second filter devices in at least three of the sub-pixel sensing units are different.
Optionally, the second wavelength band comprises an infrared wavelength band, and the second filter device comprises an infrared filter device; alternatively, the second wavelength band includes an ultraviolet wavelength band, and the second filter device includes an ultraviolet filter device.
Optionally, a plurality of the pixel structures are arranged in an array to form a pixel sensing array; any two adjacent pixel structures share one row or one column of the sub-pixel sensing units which are adjacent to each other.
In a second aspect, an embodiment of the present invention further provides a vision sensor, including a sensing control unit and the pixel sensing array of the first aspect;
the sensing control unit is electrically connected with the first pixel sensing unit and the second pixel sensing unit and is used for processing the light rays of the first wave band and the second wave band.
Optionally, the first pixel sensing unit is further configured to convert the light in the first wavelength band into an electrical signal representing light intensity information of the light; the second pixel sensing unit is also used for converting the light rays in the second wave band into electric signals representing the color light intensity information of the light rays; the pixel structures are arranged in an array to form a pixel sensing array; any two adjacent pixel structures share one row or one column of the sub-pixel sensing units adjacent to the pixel structures;
the pixel sensing array is provided with a plurality of repeating units, and each repeating unit comprises three rows and three columns of pixel structures, one pixel structure located at the center and four pixel structures located at four corners; the sensing control unit is used for generating an electric signal representing the light intensity variation of the optical signal of the first waveband according to the difference between the electric signals converted by at least one of the first pixel sensing units positioned at four corners in the repeating unit and the first pixel sensing unit positioned at the center.
Optionally, in the row direction of the pixel sensing array, two spaced repeating units share two first pixel sensing units in two adjacent pixel structures; in the column direction of the pixel sensing array, two spaced repeating units share the first pixel sensing unit in two adjacent pixel structures.
Optionally, the sensing control unit is further configured to generate an image signal according to an electrical signal representing a light intensity variation of the optical signal in the first wavelength band and an electrical signal representing color light intensity information of the light in the second wavelength band converted by the second pixel sensing unit in the repeating unit.
The pixel sensing array provided by the embodiment of the invention comprises a pixel structure, wherein the pixel structure comprises a first pixel sensing unit and a second pixel sensing unit, each pixel structure can receive light rays of a first wave band of a corresponding pixel area through the first pixel sensing unit and receive light rays of a second wave band of the corresponding pixel area through the second pixel sensing unit, and when the first wave band and the second wave band are different wave bands, the scheme can also realize that different information in a target optical signal is sensed through the first pixel sensing unit and the second pixel sensing unit. The second pixel sensing unit comprises a plurality of sub-pixel sensing units, and the plurality of sub-pixel sensing units are arranged around the first pixel sensing unit, so that the distance between the first pixel sensing unit and the sub-pixel sensing unit in each pixel structure is reduced, and the distance between the adjacent sub-pixel sensing units is reduced. The technical scheme of the invention is beneficial to solving the problems that the vision sensor in the prior art can only obtain single type of image information and the pixel integration level is low, is beneficial to obtaining different types of image information through the vision sensor comprising the pixel sensing array so as to improve the performance of the vision sensor and widen the application scene of the vision sensor, and is also beneficial to improving the pixel integration level of the pixel sensing array so as to improve the image quality obtained by the vision sensor.
Drawings
Fig. 1 is a schematic diagram of a pixel structure according to an embodiment of the invention;
FIG. 2 is a schematic diagram of another pixel structure provided by an embodiment of the invention;
FIG. 3 is a schematic structural diagram of a pixel sensor array according to an embodiment of the present invention;
fig. 4 is a schematic block diagram of a vision sensor according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a repeating unit according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
An embodiment of the present invention provides a pixel sensing array, where the pixel sensing array includes a pixel structure, fig. 1 is a schematic diagram of a pixel structure provided in an embodiment of the present invention, and as shown in fig. 1, the pixel sensing array provided in an embodiment of the present invention includes a pixel structure 100, where the pixel structure 100 includes: the pixel array comprises a first pixel sensing unit 10 and a second pixel sensing unit, wherein the first pixel sensing unit 10 is used for receiving light rays of a first wave band, and the second pixel sensing unit is used for receiving light rays of a second wave band; the second pixel sensing unit includes a plurality of sub-pixel sensing units 21, and the plurality of sub-pixel sensing units 21 are disposed around the first pixel sensing unit 10.
The pixel sensing array provided by the embodiment of the invention can be applied to a visual sensor, so as to realize the acquisition of a target light signal through the pixel sensing array, and further convert the target light signal into a corresponding image signal or a corresponding video signal through the visual sensor, wherein the target light signal can be from a static person, a dynamic person, a static scene or a dynamic scene, and the like, which is not limited in the embodiment of the invention.
Specifically, each of the first pixel sensing unit 10 and the second pixel sensing unit may include a photosensitive unit, and the first pixel sensing unit 10 and the second pixel sensing unit may be configured to constitute a plurality of pixel structures in a pixel sensing array, and fig. 1 schematically illustrates only one pixel structure in the pixel sensing array, and each pixel structure in the pixel sensing array may correspond to one pixel in an image, so that each pixel structure converts an optical signal in a corresponding pixel region into a corresponding electrical signal through the first pixel sensing unit 10 and the second pixel sensing unit therein.
The first pixel sensing unit 10 is configured to receive light of a first wavelength band, which means that the first pixel sensing unit 10 can extract light of the first wavelength band from a target optical signal, for example, when the first pixel sensing unit 10 includes a light sensing unit, the light of the first wavelength band from the target optical signal can be directly extracted by the light sensing unit, and the light of the first wavelength band is converted into a corresponding electrical signal, and when the first pixel sensing unit 10 includes a light sensing unit and a light filtering unit, the light of the first wavelength band from the target optical signal can be extracted by the light filtering unit, and the light of the first wavelength band is converted into a corresponding electrical signal by the light sensing unit. The light of the first wavelength band may be light of at least some of visible light, infrared light and ultraviolet light.
Similarly, the second pixel sensing unit is configured to receive light in a second wavelength band, which means that the second pixel sensing unit can extract light in the second wavelength band from the target optical signal through the sub-pixel sensing unit 21, for example, when the sub-pixel sensing unit 21 in the second pixel sensing unit 20 includes a light sensing unit, the light in the second wavelength band from the target optical signal can be directly extracted through the light sensing unit and converted into a corresponding electrical signal, and when the sub-pixel sensing unit 21 in the second pixel sensing unit 20 includes a light sensing unit and a light filtering unit, the light in the second wavelength band from the target optical signal can be extracted through the light filtering unit and converted into a corresponding electrical signal through the light sensing unit. The light of the second waveband can be light of at least partial waveband in visible light, infrared light and ultraviolet waveband.
The first and second bands may be the same band or different bands. When the first waveband and the second waveband are different wavebands, sensing of different information in the target optical signal through the first pixel sensing unit 10 and the second pixel sensing unit 20 is facilitated, so that the performance of the visual sensor comprising the pixel structure is improved, and the application scene of the visual sensor is widened.
Fig. 1 only schematically illustrates a case where one second pixel sensing unit includes twelve sub-pixel sensing units 21 arranged around the first pixel sensing unit 10, and in practical applications, the number of sub-pixel sensing units 21 in each second pixel sensing unit may be set according to requirements, which is not specifically limited in this embodiment. The plurality of sub-pixel sensing units 21 are disposed around the first pixel sensing unit 10, which means that the plurality of sub-pixel sensing units 21 in the second pixel sensing unit are connected end to end and surround the first pixel sensing unit 10. In the pixel sensing array of the prior art, the light sensing area of each pixel sensing unit is equal, and the different pixel sensing units in the pixel sensing array are generally alternately arranged, compared with the prior art, the second pixel sensing unit in this embodiment includes a plurality of sub-pixel sensing units 21, and the plurality of sub-pixel sensing units 21 are arranged around the first pixel sensing unit 10, so that the first pixel sensing unit 10 can receive the light of the first wavelength band of the pixel region corresponding to the pixel structure 100, the plurality of sub-pixel sensing units 21 can receive the light of the second wavelength band around the first pixel sensing unit 10 in the pixel region, which helps to determine the image signal or video signal of the pixel region, and at the same time, helps to reduce the distance between the center of the first pixel sensing unit 10 and the center of the sub-pixel sensing unit 21, and reduces the distance between the adjacent sub-pixel sensing units 21, the advantage of setting up like this is favorable to promoting the pixel integration level of pixel sensing array, and then promotes the image accuracy that this pixel sensing array acquireed.
The pixel sensing array provided by the embodiment of the invention comprises a pixel structure, wherein the pixel structure comprises a first pixel sensing unit and a second pixel sensing unit, each pixel structure can receive light rays of a first wave band of a corresponding pixel area through the first pixel sensing unit and receive light rays of a second wave band of the corresponding pixel area through the second pixel sensing unit, and when the first wave band and the second wave band are different wave bands, the scheme can also realize that different information in a target optical signal is sensed through the first pixel sensing unit and the second pixel sensing unit. The second pixel sensing unit comprises a plurality of sub-pixel sensing units, and the plurality of sub-pixel sensing units are arranged around the first pixel sensing unit, so that the distance between the first pixel sensing unit and the sub-pixel sensing unit in each pixel structure is reduced, and the distance between the adjacent sub-pixel sensing units is reduced. The technical scheme of the invention is beneficial to solving the problems that the vision sensor in the prior art can only obtain single type of image information and the pixel integration level is low, is beneficial to obtaining different types of image information through the vision sensor comprising the pixel sensing array so as to improve the performance of the vision sensor and widen the application scene of the vision sensor, and is also beneficial to improving the pixel integration level of the pixel sensing array so as to improve the image quality obtained by the vision sensor.
On the basis of the above scheme, optionally, referring to fig. 1, the light sensing area of the sub-pixel sensing unit 21 is set smaller than that of the first pixel sensing unit 10.
In the pixel sensing array in the prior art, the photosensitive area of each pixel sensing unit is equal, and compared with the prior art, the embodiment of the present invention sets the photosensitive area of the sub-pixel sensing unit 21 to be smaller than the photosensitive area of the first pixel sensing unit 10, which is not only beneficial to reducing the distance between the first pixel sensing unit 10 and the sub-pixel sensing unit 21 in each pixel structure 100, but also beneficial to reducing the distance between adjacent sub-pixel sensing units 21, so as to improve the pixel integration level of the pixel sensing array and further improve the image quality obtained by the vision sensor. For example, the light sensing area of each sub-pixel sensing unit 21 may be one fourth of the light sensing area of the first pixel sensing unit 10, and compared with the arrangement mode that the light sensing areas of the sub-pixel sensing units 21 and the first pixel sensing unit 10 are equal, the scheme enables each side edge of the first pixel sensing unit 10 to be adjacent to two sub-pixel sensing units 21, which is beneficial to improving the pixel integration of the pixel sensing array by reducing the distance between adjacent pixel sensing units, and further improving the image accuracy obtained by the pixel sensing array.
Alternatively, referring to fig. 1, each pixel structure 100 is provided to include one first pixel sensing unit 10 and one second pixel sensing unit; the plurality of sub-pixel sensing units 21 surround the four side edges of the first pixel sensing unit 10, the number of sub-pixel sensing units 21 surrounding each side edge of the first pixel sensing unit 10 is equal, and a row of sub-pixel sensing units 21 surrounding the adjacent edge of the first pixel sensing unit 10 is connected with a column of sub-pixel sensing units 21 and shares one sub-pixel sensing unit 21.
For example, fig. 1 shows a case where the photosensitive areas of the first pixel sensing unit 10 and the sub-pixel sensing unit 21 are both approximately square, and the photosensitive area of each sub-pixel sensing unit 21 is one fourth of the photosensitive area of the first pixel sensing unit 10: the second pixel sensing unit comprises twelve sub-pixel sensing units 21, the twelve sub-pixel sensing units 21 surround the four side edges of the first pixel sensing unit 10, four sub-pixel sensing units 21 are correspondingly arranged on each side edge of the first pixel sensing unit 10, a row of sub-pixel sensing units 21 on two adjacent edges of the first pixel sensing unit 10 is connected with a column of sub-pixel sensing units 21, and one sub-pixel sensing unit 21 is shared, namely, each of the four sub-pixel sensing units 21 on the four corners of the pixel structure 100 is shared by the sub-pixel sensing unit 21 on the row and the sub-pixel sensing unit 21 on the column. The advantage of this arrangement is that each side edge of the first pixel sensing unit 10 is adjacent to two sub-pixel sensing units 21, and four corners of the first pixel sensing unit 10 are also adjacent to four sub-pixel sensing units 21, which is helpful for receiving light of a first wavelength band by using the first pixel sensing unit 10 in each pixel structure 100, and receiving light of a second wavelength band by using the sub-pixel sensing units 21, thereby assisting in determining an image signal or a video signal of a pixel region corresponding to the pixel structure 100, and simultaneously, assisting in improving the pixel integration level of the pixel sensing array, thereby improving the accuracy of an image acquired by the pixel sensing array.
On the basis of the above scheme, optionally, with reference to fig. 1, the first pixel sensing unit 10 is further configured to convert the light in the first wavelength band into an electrical signal representing light intensity information of the light; the second pixel sensing unit is also used for converting the light rays in the second wave band into electric signals representing the color light intensity information of the light rays; at least one of the first and second bands comprises an infrared band; alternatively, at least one of the first and second wavelength bands includes an ultraviolet band.
Specifically, the first pixel sensing unit 10 converts the light of the first wavelength band into an electrical signal representing the light intensity information thereof, which is specifically the light intensity information of the light of the first wavelength band, and can also be understood as the gray scale information corresponding to the light intensity. The second pixel sensor unit converts the light in the second waveband into an electric signal representing color light intensity information of the second pixel sensor unit, wherein the color light intensity information not only comprises absolute light intensity information, but also comprises chromaticity information of the light.
For example, when the pixel sensing array is applied to a vision sensor, the present solution is beneficial to enable the vision sensor to determine the light intensity variation of the light in the first wavelength band in the corresponding pixel region according to the difference between the electrical signals converted by the first pixel sensing units 10 in different pixel structures 100 of the pixel sensing array, so as to increase the dynamic range of the image acquired by the vision sensor and improve the shooting speed of the vision sensor, and the vision sensor can also determine the color light intensity information of the light in the second wavelength band in the corresponding pixel region according to the electrical signals converted by the sub-pixel sensing units 21 in the second pixel sensing unit, so as to improve the color rendition and image quality of the image acquired by the vision sensor. The technical scheme of the embodiment is beneficial to simultaneously acquiring high-quality color light intensity signals and high-speed light intensity variable quantity signals through the pixel structure in the pixel sensing array, and enriching the visual information of the image acquired by the pixel sensing array through the complementation of the image signals of two modes.
At least one of the first and second bands comprises an infrared band or at least one of the first and second bands comprises an ultraviolet band, illustratively the first band comprises a visible band and an infrared band and the second band comprises a visible band; the first waveband and the second waveband comprise a visible light waveband and an infrared waveband; the first wave band comprises a visible light wave band and an ultraviolet wave band, and the second wave band comprises a visible light wave band; the first and second bands both include visible and ultraviolet bands. The advantage of such an arrangement is that when the first wavelength band and the second wavelength band are different wavelength bands, it is helpful to sense different information in the target light signal through the first pixel sensing unit 10 and the second pixel sensing unit, so as to improve the performance of the visual sensor including the pixel structure, and widen the application scene of the visual sensor, for example, when at least one of the first wavelength band and the second wavelength band includes an infrared wavelength band, the visual sensor may be applied in an infrared camera scene, and when at least one of the first wavelength band and the second wavelength band includes an ultraviolet wavelength band, the visual sensor may be applied in an ultraviolet camera scene.
Fig. 2 is a schematic diagram of another pixel structure provided in an embodiment of the present invention, and optionally, on the basis of the above embodiment, a plurality of sub-pixel sensing units 21 are provided, where the sub-pixel sensing units 21 include at least three sub-pixel sensing units 21, and the at least three sub-pixel sensing units 21 are respectively configured to receive light beams of different color components and output electrical signals representing light intensity information of corresponding color components.
Each of the sub-pixel sensing units 21 may illustratively include a light sensing unit and a light filtering unit, through which light corresponding to a color component is extracted and converted into an electrical signal representing light intensity information of the color component thereof by the light sensing unit. Alternatively, the second pixel sensing unit 20 includes at least a sub-pixel sensing unit 21R having a center frequency of red, a sub-pixel sensing unit 21G having a center frequency of green, and a sub-pixel sensing unit 21B having a center frequency of blue.
The sub-pixel sensing unit 21R having a red center frequency (hereinafter referred to as a red sub-pixel sensing unit 21R) is a sub-pixel sensing unit that mainly extracts the red component of the light in the second wavelength band and converts the red component into an electrical signal representing the intensity information of the color component. The sub-pixel sensing unit 21G having a green center frequency (hereinafter referred to as a green sub-pixel sensing unit 21G) is a sub-pixel sensing unit that mainly extracts the green component of the light in the second wavelength band and converts the green component into an electrical signal representing the light intensity information of the color component. The sub-pixel sensing unit 21B having a blue central frequency (hereinafter referred to as a blue sub-pixel sensing unit 21B) is a sub-pixel sensing unit that mainly extracts the light of the blue component in the light of the second wavelength band and converts the light into an electrical signal representing the light intensity information of the color component thereof. This has the advantage that a high accuracy of obtaining the absolute intensity information and the chromaticity information of the light of different color components can be achieved.
On the basis of the above scheme, optionally, referring to fig. 2, in the pixel structure 100, the sub-pixel sensing units 21 surrounding each side edge of the first pixel sensing unit 10 each include a red sub-pixel sensing unit 21R, a green sub-pixel sensing unit 21G and a blue sub-pixel sensing unit 21B, and the center frequencies of the sub-pixel sensing units 21 shared by a row of sub-pixel sensing units 21 surrounding each adjacent edge of the first pixel sensing unit 10 and a column of sub-pixel sensing units 21 are the same.
In the scheme, the sub-pixel sensing units 21 surrounding each side edge of the first pixel sensing unit 10 respectively comprise the red sub-pixel sensing unit 21R, the green sub-pixel sensing unit 21G and the blue sub-pixel sensing unit 21B, so that the red sub-pixel sensing unit 21R, the green sub-pixel sensing unit 21G and the blue sub-pixel sensing unit 21B surrounding any side edge of the first pixel sensing unit 10 in the pixel structure 100 can be used for acquiring absolute light intensity information and chromaticity information of light rays with different color components in the pixel region, and convenience in acquiring image information is improved. A row of sub-pixel sensing units 21 surrounding each adjacent edge of the first pixel sensing unit 10 and a column of sub-pixel sensing units 21, i.e., the sub-pixel sensing units 21 located at the four corners of the pixel structure 100, may be the same as the red sub-pixel sensing unit 21R, the same as the green sub-pixel sensing unit 21G, or both, the blue sub-pixel sensing unit 21B, fig. 2 schematically shows the case where the sub-pixel sensing units 21 located at the four corners of the pixel structure 100 are both the blue sub-pixel sensing unit 21B, in the scheme, the center frequencies of the sub-pixel sensing units 21 shared by the sub-pixel sensing units 21 in one row and the sub-pixel sensing units 21 in one column around each adjacent edge of the first pixel sensing unit 10 are the same, so that multiplexing of the sub-pixel sensing units 21 positioned at four corners of the pixel structure 100 can be realized, and the pixel filling factor of the pixel sensing array is improved.
On the basis of the above scheme, optionally, referring to fig. 2, the sub-pixel sensing units 21 shared by the sub-pixel sensing units 21 in one row and the sub-pixel sensing units 21 in one column around each adjacent edge of the first pixel sensing unit 10 are all blue sub-pixel sensing units 21B, the sub-pixel sensing units 21 around the first pixel sensing unit 10 are arranged in a central symmetry manner with respect to the pixel structure 100, and in the pixel structure 100, the number ratio of the red sub-pixel sensing units 21R, the green sub-pixel sensing units 21G and the blue sub-pixel sensing units 21B is 1:1: 1.
Illustratively, it is still exemplified that one second pixel sensing unit includes twelve sub-pixel sensing units 21. Each side edge of the first pixel sensing unit 10 is correspondingly provided with four sub-pixel sensing units 21, and the sub-pixel sensing units 21 located at the four corners of the pixel structure 100 are also blue sub-pixel sensing units 21B, meanwhile, since the sub-pixel sensing units 21 are arranged in a central symmetry manner with respect to the pixel structure 100, and the number ratio of the red sub-pixel sensing units 21R, the green sub-pixel sensing units 21G and the blue sub-pixel sensing units 21B is 1:1:1, two sub-pixel sensing units 21 on two sides of the four sub-pixel sensing units 21 arranged corresponding to each side edge of the first pixel sensing unit 10 are both blue sub-pixel sensing units 21B, one of the two sub-pixel sensing units 21 in the middle is a red sub-pixel sensing unit 21R, and the other is a green sub-pixel sensing unit 21G. This has the advantage that a column of three consecutive sub-pixel sensing units from the sub-pixel sensing unit 21 at the upper right corner of the pixel structure 100, a row of three consecutive sub-pixel sensing units from the sub-pixel sensing unit 21 at the lower right corner of the pixel structure 100, a column of three consecutive sub-pixel sensing units from the sub-pixel sensing unit 21 at the lower left corner of the pixel structure 100, and a row of three consecutive sub-pixel sensing units from the sub-pixel sensing unit 21 at the upper left corner of the pixel structure 100, wherein each three consecutive sub-pixel sensing units 21 comprises a red sub-pixel sensing unit 21R, a green sub-pixel sensing unit 21G and a blue sub-pixel sensing unit 21B, and each three consecutive sub-pixel sensing units 21 can be used to obtain absolute intensity information and chromaticity information of light of different color components in the pixel area, to improve the convenience of the acquisition of the image information.
Referring to fig. 1 and 2, alternatively, in the pixel structure 100, the first pixel sensing unit 10 is used for simulating rod cells to obtain an electrical signal representing the variation of the light intensity of the light in the first wavelength band; the second pixel sensing unit is used for simulating cone cells so as to obtain an electric signal representing the color intensity information of the light rays with the second wave band.
Specifically, the embodiment of the present invention may utilize the pixel structure 100 in the pixel sensing array to simulate different visual perception cells in the retina of a human eye, convert light rays in a first waveband into electrical signals representing light intensity information of the light rays through the first pixel sensing unit 10, and determine the electrical signals representing the light intensity variation of the light rays in the first waveband in a corresponding pixel region according to the difference between the electrical signals converted by the first pixel sensing unit 10 in different pixel structures 100, so as to simulate rod cells to obtain light intensity gradient information, thereby improving the perception capability of the pixel structure on a dynamic target, and increasing the dynamic range and shooting speed of an image acquired by the pixel structure; the sub-pixel sensing unit 21 in the second pixel sensing unit converts the light of the second waveband into an electric signal representing the color light intensity information of the sub-pixel sensing unit so as to simulate the cone cells to acquire the color light intensity information, thereby being beneficial to improving the color reduction degree and the image quality of the image acquired by the pixel structure.
Referring to fig. 1 and 2, optionally, in one embodiment of the invention, the first band comprises an infrared band; the first pixel sensing unit 10 includes a first photosensitive device, which is an infrared photosensitive device.
In particular, the first Photo sensing device may be a Photo-Diode (PD) capable of converting an optical signal into a corresponding electrical signal. When the first wavelength band includes an infrared wavelength band, the first photosensitive device may be a photosensitive device sensitive to infrared rays, such as an infrared photodiode. So that the first pixel sensing unit can sense the light intensity change information of the infrared ray in the target light signal through the first photosensitive device.
Optionally, in another embodiment of the present invention, the first pixel sensing unit 10 includes a first photosensitive device and a first filter device disposed on the first photosensitive device, and the first photosensitive device is an infrared photosensitive device and/or the first filter device is an infrared filter device.
Specifically, the first filter device is used to select a wavelength band of light passing through the device, and the first filter device may be a Color filter (Color filter) or an optical lens capable of extracting a light signal of a set component, such as a bayer lens. The first light filter device can be arranged on the photosensitive surface of the first photosensitive device, so that the target light signal firstly irradiates the surface of the first light filter device, the first light filter device can extract light rays of a first wave band including an infrared wave band in the target light signal, the light rays of the first wave band irradiate the photosensitive surface of the first photosensitive device, and the first light signal with a set wave band is converted into a corresponding electric signal through the first photosensitive device. According to the embodiment of the invention, the first photosensitive device is an infrared photosensitive device and/or the first filter device is an infrared filter device, so that the first pixel sensing unit can sense the light intensity change information of infrared rays in the target optical signal.
Optionally, in another embodiment of the present invention, the first wavelength band comprises an ultraviolet band; the first pixel sensing unit 10 includes a first photosensitive device, which is an ultraviolet photosensitive device. In particular, when the first wavelength band includes an ultraviolet wavelength band, the first photosensitive device may be an ultraviolet-sensitive photosensitive device, such as an ultraviolet photodiode. So that the first pixel sensing unit can sense the light intensity change information of the ultraviolet rays in the target light signal through the first photosensitive device.
Optionally, in another embodiment of the present invention, the first pixel sensing unit 10 includes a first photosensitive device and a first filter device disposed on the first photosensitive device, and the first photosensitive device is an ultraviolet photosensitive device and/or the first filter device is an ultraviolet filter device. According to the embodiment of the invention, the first photosensitive device is an ultraviolet photosensitive device and/or the first filtering device is an ultraviolet filtering device, so that the first pixel sensing unit can sense the light intensity change information of ultraviolet rays in the target optical signal.
Alternatively, in another embodiment of the present invention, the sub-pixel sensing units 21 include a second photosensitive device and a second filter device disposed on the second photosensitive device, and the filter colors of the second filter devices in at least three sub-pixel sensing units 21 are different.
In particular, the second Photo sensing device may be a Photo-Diode (PD) capable of converting an optical signal into a corresponding electrical signal. The second filter device is used to select the wavelength band of light passing through the device, and the first filter device may be a Color filter (Color filter) or an optical lens capable of extracting a light signal of a set component, such as a bayer lens. The second light filter device can be arranged on the light sensing surface of the second light sensing device, and after the second light filter device extracts the optical signals of the second waveband in the target optical signals, the second light sensing device can convert the light of the second waveband into corresponding electric signals.
Illustratively, when the second pixel sensing units include the sub-pixel sensing unit 21R having the center frequency of red, the sub-pixel sensing unit 21G having the center frequency of green, and the sub-pixel sensing unit 21B having the center frequency of blue, the second optical filter devices corresponding to the sub-pixel sensing unit 21R having the center frequency of red, the sub-pixel sensing unit 21G having the center frequency of green, and the sub-pixel sensing unit 21B having the center frequency of blue are red, green, and blue second optical filter devices, respectively. When the target optical signal is irradiated to the second pixel sensing unit, the second optical filter device in each sub-pixel sensing unit 21 extracts an optical signal in a red wavelength band, an optical signal in a green wavelength band, and an optical signal in a blue wavelength band from the target optical signal, so that the second optical filter device in the second pixel sensing unit can convert the optical signal in the corresponding wavelength band into a corresponding electrical signal. The second pixel sensing unit realizes the high-precision acquisition of the absolute light intensity information and the chromaticity information of the optical signals with different components by sensing the optical signals with different components in the target optical signal.
Optionally, on the basis of the above scheme, when the second wavelength band includes an infrared band, the second filter device includes an infrared filter device. Therefore, the second pixel sensing unit can sense the light signal of the red light component, the light signal of the green light component and the light signal of the blue light component in the target light signal, and can also sense the light signal of the infrared component, and the sensing capability of the pixel structure on the color light intensity information of the infrared ray in the target light signal is improved. Optionally, when the second wavelength band includes an ultraviolet wavelength band, the second filter device includes an ultraviolet filter device. Therefore, the second pixel sensing unit can sense the light signal of the red light component, the light signal of the green light component and the light signal of the blue light component in the target light signal, and can also sense the light signal of the ultraviolet component, and the sensing capability of the pixel structure on the color light intensity information of ultraviolet rays in the target light signal is improved.
Fig. 3 is a schematic structural diagram of a pixel sensor array according to an embodiment of the present invention, where the pixel sensor array may include the pixel structure 100 shown in fig. 1 or fig. 2. Referring to fig. 1 to fig. 3, on the basis of the above solutions, optionally, a plurality of pixel structures 100 are arranged in an array to form a pixel sensing array; any two adjacent pixel structures 100 share two adjacent rows or columns of sub-pixel sensing units 21.
Specifically, each pixel structure 100 in the pixel sensing array may correspond to one pixel in an image, so that each pixel structure 100 converts an optical signal in a corresponding pixel region into a corresponding electrical signal through the first pixel sensing unit 10 and the second pixel sensing unit therein.
Any two adjacent pixel structures 100 share two adjacent rows or columns of sub-pixel sensing units 21, which means that any two adjacent pixel structures 100 in each row share two adjacent columns of sub-pixel sensing units 21, that is, the column of sub-pixel sensing units 21 belongs to two adjacent pixel structures 100 at the same time, both the two adjacent pixel structures 100 can receive light of the second wavelength band by using the column of sub-pixel sensing units 21, and any two adjacent pixel structures 100 in each column share two adjacent rows of sub-pixel sensing units 21, that is, the row of sub-pixel sensing units 21 belongs to two adjacent pixel structures 100 at the same time, and both the two adjacent pixel structures 100 can receive light of the second wavelength band by using the row of sub-pixel sensing units 21. Illustratively, in the first row of pixel structures 100 of the pixel sensor array, the first pixel structure 100 and the second pixel structure 100 share a column of the sub-pixel sensor units 21 adjacent to each other, i.e., the column of the sub-pixel sensor units 21 located at the right side of the first pixel sensor unit 10 of the first pixel structure 100, may be shared by the first pixel structure 100 and the second pixel structure 100, and in the first column of pixel structures 100 of the pixel sensor array, the first pixel structure 100 and the second pixel structure 100 share a row of the sub-pixel sensor units 21 adjacent to each other, i.e., the row of the sub-pixel sensor units 21 located below the first pixel sensor unit 10 of the first pixel structure 100, may be shared by the first pixel structure 100 and the second pixel structure 100. The advantage of this embodiment is that not only the multiplexing of the sub-pixel sensing units in the adjacent pixel structures is realized, but also the pixel filling factor of the pixel sensing array is improved.
Fig. 4 is a schematic block structure diagram of a vision sensor according to an embodiment of the present invention, as shown in fig. 1 to 4, the vision sensor according to an embodiment of the present invention includes a sensing control unit 30 and a pixel sensing array according to any of the embodiments of the present invention; the sensing control unit 30 is electrically connected to the first pixel sensing unit 10 and the second pixel sensing unit 20, and the sensing control unit 30 is configured to process the light of the first wavelength band and the light of the second wavelength band.
Illustratively, the first pixel sensing unit 10 can extract light in a first wavelength band from the target light signal and convert the light in the first wavelength band into a corresponding electrical signal, the second pixel sensing unit 20 can extract light in a second wavelength band from the target light signal through the sub-pixel sensing unit 21 therein and convert the light in the second wavelength band into a corresponding electrical signal, and the sensing control unit 30 can process the electrical signal converted by the first pixel sensing unit 10 and the electrical signal converted by the sub-pixel sensing unit 21 in the second pixel sensing unit 20 to obtain image information of a pixel region corresponding to each pixel structure 100 in the pixel sensing array.
The visual sensor provided by the embodiment of the present invention includes the pixel sensing array provided by any of the above embodiments of the present invention, and therefore, the visual sensor has a corresponding functional structure and beneficial effects of the pixel sensing array, and details are not repeated here.
Fig. 5 is a schematic structural diagram of a repeating unit according to an embodiment of the present invention, which may be a repeating unit in the pixel sensor array shown in fig. 3. Referring to fig. 1 to 5, optionally, the first pixel sensor unit 10 is further configured to convert the light of the first wavelength band into an electrical signal representing light intensity information thereof; the second pixel sensing unit 20 is further configured to convert the light of the second wavelength band into an electrical signal representing color intensity information thereof; the plurality of pixel structures 100 are arranged in an array to form a pixel sensing array; any two adjacent pixel structures 100 share two adjacent rows or columns of sub-pixel sensing units 21; the pixel sensing array is provided with a plurality of repeating units, and each repeating unit comprises one pixel structure 100 positioned at the center in three rows and three columns of pixel structures 100 and four pixel structures 100 positioned at four corners; the sensing control unit 30 is configured to generate an electrical signal representing the amount of change in the light intensity of the optical signal in the first wavelength band according to the difference between the electrical signals converted by at least one of the first pixel sensing units 10 (i.e., the first pixel sensing unit 10b) located at the four corners and the first pixel sensing unit 10 (i.e., the first pixel sensing unit 10a) located at the center among the repeating units.
Fig. 3 shows a case where the pixel structure 100 in the even-numbered row in the pixel sensor array includes the first pixel sensor unit 10a, and the pixel structure 100 in the odd-numbered row includes the first pixel sensor unit 10b, that is, a case where the pixel structure 100 in the even-numbered row in the pixel sensor array is taken as the pixel structure 100 located at the center in the repeating unit, in practical applications, one pixel structure 100 located at the center and four pixel structures 100 located at four corners in any three rows and three columns of the pixel sensor array 100 may constitute one repeating unit, and the sensing control unit 30 may perform a difference operation on a value corresponding to the electrical signal converted by the first pixel sensor unit 10a in the pixel structure 100 located at the center in each repeating unit and the electrical signal converted by the first pixel sensor unit 10b in the pixel structure 100 located at four corners to obtain a difference signal, therefore, the exciting type rod cells and the inhibiting type rod cells of the human eyes are simulated to obtain the electric signals representing the light intensity variation of the light rays of the pixel region, so that the perception capability of the visual sensor to a dynamic target is improved, the dynamic range of the image acquired by the visual sensor is enlarged, and the shooting speed of the visual sensor is improved.
For example, the sensing control unit 30 may make a difference with a value corresponding to the electrical signal converted by any one of the four first pixel sensing units 10b based on only a value corresponding to the electrical signal converted by the first pixel sensing unit 10a to obtain a differential signal; alternatively, the sensing control unit 30 may also perform a difference between a value corresponding to the electrical signal converted by the first pixel sensing unit 10a and an average value of values corresponding to the electrical signals converted by any two of the four first pixel sensing units 10b to obtain a differential signal; alternatively, the sensing control unit 30 may also perform a difference between the value corresponding to the electrical signal converted by the first pixel sensing unit 10a and an average value of the values corresponding to any three of the electrical signals converted by the four first pixel sensing units 10b to obtain a differential signal; alternatively, the sensing control unit 3 may further obtain a differential signal by subtracting an average value of the values corresponding to the electrical signals converted by the four first pixel sensing units 10b according to the value corresponding to the electrical signal converted by the first pixel sensing unit 10 a.
Referring to fig. 1 to 5, on the basis of the above scheme, optionally, in the row direction of the pixel sensing array, two spaced repeating units share two first pixel sensing units 10 in two adjacent pixel structures 100; in the column direction of the pixel sensing array, the first pixel sensing unit 10 in two adjacent pixel structures 100 is shared by adjacent repeating units.
In fig. 3, three repeating units in the pixel sensor array, namely two repeating units in the first three rows of pixel structures 100 and two repeating units in the last three rows of pixel structures 100, are highlighted by thick lines, and the three repeating units are taken as an example for explanation. Illustratively, in the row direction of the pixel sensor array, the two spaced repeating units refer to the first and third repeating units in the first three rows of pixel structures 100, wherein the first repeating unit refers to the repeating unit centered on the second pixel structure 100 in the second row, the third repeating unit refers to the repeating unit centered on the fourth pixel structure 100 in the second row, and the first and third repeating units are spaced by one repeating unit, that is, the repeating unit centered on the third pixel structure 100 in the second row. In the row direction of the pixel sensor array, two first pixel sensor units 10b in two adjacent pixel structures 100, i.e., the first and third repeating units in the first three rows of pixel structures 100, are shared by two spaced repeating units, and the first pixel sensor unit 10b in the two pixel structures 100 on the right side of the first repeating unit is shared by two first pixel sensor units 10b, and the first pixel sensor unit 10b in the two pixel structures 100 on the left side of the third repeating unit is also shared by the first pixel sensor unit 10b in the third pixel structure 100 on the third column, i.e., the first pixel sensor unit 10b in the third column, the first and the third column of the pixel sensor array. When the first repeating unit in the first three rows of pixel structures 100 acquires the differential signal according to the first pixel sensing unit 10a and the two first pixel sensing units 10b on the right side, the third repeating unit in the first three rows of pixel structures 100 may also acquire the differential signal according to the two first pixel sensing units 10b and the first pixel sensing unit 10a thereof, so as to obtain the electrical signal representing the light intensity variation of the optical signal of the first wavelength band in the corresponding pixel region.
Similarly, in the column direction of the pixel sensor array, the two spaced repeating units refer to the first and third repeating units in the first three columns (three columns from the left), where the first repeating unit refers to the repeating unit centered on the second pixel structure 100 in the second row, the third repeating unit refers to the repeating unit centered on the second pixel structure 100 in the fourth row, and the first and third repeating units are spaced from each other by one repeating unit, i.e., the repeating unit centered on the second pixel structure 100 in the third row. In the column direction of the pixel sensor array, two first pixel sensor units 10b in two adjacent pixel structures 100, i.e., the first and third pixel sensor units in the first three columns of pixel structures 100, are shared by two spaced repeating units, and the first pixel sensor unit 10b in the two pixel structures 100 below the first repeating unit, the two first pixel sensor units 10b, and the first pixel sensor unit 10b in the two pixel structures 100 above the third repeating unit, i.e., the first pixel sensor unit 10b in the third row, the first pixel sensor unit 10b in the third pixel structure 100 in the third row and the third row of the pixel sensor array, are shared by two spaced repeating units. When the first repeating unit in the first three-column pixel structure 100 acquires the differential signal according to the first pixel sensing unit 10a and the two first pixel sensing units 10b below the first three-column pixel structure, the third repeating unit in the first three-column pixel structure 100 may also acquire the differential signal according to the two first pixel sensing units 10b and the first pixel sensing unit 10a thereof, so as to obtain the electrical signal representing the light intensity variation of the optical signal of the first wavelength band in the corresponding pixel region. The advantage that this embodiment set up like this lies in, not only can obtain the signal of telecommunication that the light intensity variation of the light of this pixel region of sign through exciting type rod cell and the suppression type rod cell of repetitive unit simulation human eye to promote the perception ability of vision sensor to dynamic target, increase the dynamic range of the image that vision sensor gathered, and improve vision sensor's speed of shooing, still be favorable to promoting the pixel fill factor of pixel sensor array.
Referring to fig. 1 to 5, optionally, the sensing control unit 30 is further configured to generate an image signal according to an electrical signal representing the light intensity variation of the light signal of the first wavelength band and an electrical signal representing the color light intensity information of the light of the second wavelength band converted by the second pixel sensing unit 20 in the repeating unit.
Illustratively, the sensing control unit 30 may also convert the light of the second wavelength band into an electrical signal representing the color intensity information thereof through the sub-pixel sensing unit 21 in the second pixel sensing unit 20 to simulate the cone cells to obtain the color intensity information. Preferably, the sensing control unit 30 may determine a value corresponding to the electrical signal converted by the first pixel sensing unit 10a in each repeating unit, the average value of the values corresponding to the electrical signals converted by the four first pixel sensing units 10b is differenced to obtain a differential signal, further generates an electrical signal representing the variation of the light intensity of the optical signal of the first wavelength band, and converts the light of the second wavelength band into an electrical signal representing the color intensity information thereof by each sub-pixel sensing unit 21 surrounding the first pixel sensing unit 10a in the repeating unit, so as to obtain high-quality color light intensity signals and high-speed light intensity variation signals simultaneously through the repeating unit, and the sensing control unit obtains the image signal of the corresponding pixel region according to the color light intensity signal and the light intensity variation quantity signal obtained by each repeating unit, thereby enriching the visual information of the image obtained by the visual sensor.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (16)
1. A pixel sensing array comprising a pixel structure, the pixel structure comprising:
the light source comprises a first pixel sensing unit and a second pixel sensing unit, wherein the first pixel sensing unit is used for receiving light rays of a first wave band, and the second pixel sensing unit is used for receiving light rays of a second wave band;
the second pixel sensing unit comprises a plurality of sub-pixel sensing units which are arranged around the first pixel sensing unit.
2. The pixel sensing array of claim 1, wherein a photosensitive area of the sub-pixel sensing unit is smaller than a photosensitive area of the first pixel sensing unit.
3. The pixel sensing array of claim 1, wherein each of the pixel structures comprises one of the first pixel sensing units and one of the second pixel sensing units;
the plurality of sub-pixel sensing units surround the four side edges of the first pixel sensing unit, the number of the sub-pixel sensing units surrounding each side edge of the first pixel sensing unit is equal, and one row of the sub-pixel sensing units surrounding the adjacent edge of the first pixel sensing unit is connected with one column of the sub-pixel sensing units and shares one sub-pixel sensing unit.
4. The pixel sensing array of claim 3, wherein the first pixel sensing unit is further configured to convert the light in the first wavelength band into an electrical signal representing light intensity information thereof; the second pixel sensing unit is also used for converting the light rays in the second wave band into electric signals representing the color light intensity information of the light rays;
at least one of the first and second bands comprises an infrared band; alternatively, at least one of the first and second wavelength bands comprises an ultraviolet band.
5. The pixel sensor array of claim 4, wherein the plurality of sub-pixel sensor units comprises at least three sub-pixel sensor units, and at least three sub-pixel sensor units are respectively configured to receive light beams of different color components and output electrical signals representing intensity information of the corresponding color components.
6. The pixel sensing array of claim 5, wherein in the pixel structure, the first pixel sensing unit is configured to simulate rod cells to obtain an electrical signal representing the variation of the light intensity of the light of the first wavelength band;
the second pixel sensing unit is used for simulating cone cells so as to obtain an electric signal representing the color and light intensity information of the light rays with the second wave band.
7. The pixel sensing array of claim 5, wherein the second pixel sensing units comprise at least sub-pixel sensing units with a red center frequency, sub-pixel sensing units with a green center frequency, and sub-pixel sensing units with a blue center frequency.
8. The pixel sensing array of claim 7, wherein the sub-pixel sensing units surrounding each side edge of the first pixel sensing unit in the pixel structure comprise sub-pixel sensing units having a red center frequency, sub-pixel sensing units having a green center frequency, and sub-pixel sensing units having a blue center frequency, and wherein a row of the sub-pixel sensing units surrounding each adjacent edge of the first pixel sensing unit has the same center frequency as the sub-pixel sensing units shared by a column of the sub-pixel sensing units.
9. The pixel sensing array of claim 4, wherein the first band of wavelengths comprises an infrared band; the first pixel sensing unit comprises a first photosensitive device, and the first photosensitive device is an infrared photosensitive device; or, the first pixel sensing unit includes a first photosensitive device and a first filter device disposed on the first photosensitive device, and the first photosensitive device is an infrared photosensitive device and/or the first filter device is an infrared filter device;
alternatively, the first band comprises an ultraviolet band; the first pixel sensing unit comprises a first photosensitive device, and the first photosensitive device is an ultraviolet photosensitive device; or, the first pixel sensing unit comprises a first photosensitive device and a first light filtering device arranged on the first photosensitive device, and the first photosensitive device is an ultraviolet photosensitive device and/or the first light filtering device is an ultraviolet light filtering device.
10. The pixel sensing array of claim 5, wherein the sub-pixel sensing units comprise a second photosensitive device and a second filter device disposed on the second photosensitive device, wherein the filter colors of the second filter devices in at least three of the sub-pixel sensing units are different.
11. The pixel sensing array of claim 10, wherein the second wavelength band comprises an infrared band, and the second filter device comprises an infrared filter device; alternatively, the second wavelength band includes an ultraviolet wavelength band, and the second filter device includes an ultraviolet filter device.
12. A pixel sensor array according to any one of claims 1 to 11, wherein a plurality of said pixel structures are arranged in an array to form a pixel sensor array; any two adjacent pixel structures share one row or one column of the sub-pixel sensing units which are adjacent to each other.
13. A vision sensor comprising a sensing control unit and a pixel sensing array according to any one of claims 1 to 12;
the sensing control unit is electrically connected with the first pixel sensing unit and the second pixel sensing unit and is used for processing the light rays of the first wave band and the second wave band.
14. The vision sensor as claimed in claim 13, wherein said first pixel sensing unit is further configured to convert light of said first wavelength band into an electrical signal indicative of light intensity information thereof; the second pixel sensing unit is also used for converting the light rays in the second wave band into electric signals representing the color light intensity information of the light rays; the pixel structures are arranged in an array to form a pixel sensing array; any two adjacent pixel structures share one row or one column of the sub-pixel sensing units adjacent to the pixel structures;
the pixel sensing array is provided with a plurality of repeating units, and each repeating unit comprises three rows and three columns of pixel structures, one pixel structure located at the center and four pixel structures located at four corners; the sensing control unit is used for generating an electric signal representing the light intensity variation of the optical signal of the first waveband according to the difference between the electric signals converted by at least one of the first pixel sensing units positioned at four corners in the repeating unit and the first pixel sensing unit positioned at the center.
15. The vision sensor of claim 14, wherein two of the repeating units spaced apart in a row direction of the pixel sensing array share two of the first pixel sensing units in two of the pixel structures that are adjacent to each other; in the column direction of the pixel sensing array, two spaced repeating units share the first pixel sensing unit in two adjacent pixel structures.
16. The vision sensor as claimed in claim 14, wherein said sensing control unit is further configured to generate an image signal based on an electrical signal representing the variation of the light intensity of the light signal of the first wavelength band and an electrical signal representing the color intensity information of the light of the second wavelength band converted by said second pixel sensing unit in said repeating unit.
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