CN113038046B - Pixel sensing array and vision sensor - Google Patents
Pixel sensing array and vision sensor Download PDFInfo
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
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- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
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- H04N23/84—Camera processing pipelines; Components thereof for processing colour signals
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
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Abstract
The embodiment of the invention discloses a pixel sensing array and a vision sensor. The pixel sensing array includes a pixel structure including: the first pixel sensing unit is used for receiving light rays of a first wave band, and the second pixel sensing unit is used for receiving light rays of a second wave band; the second pixel sensing unit comprises a plurality of sub-pixel sensing units, and the sub-pixel sensing units are arranged around the first pixel sensing unit. According to the technical scheme, the method and the device are beneficial to acquiring different kinds of image information through the vision sensor comprising the pixel sensing array, so that the performance of the vision sensor is improved, the application scene of the vision sensor is widened, the pixel integration level of the pixel sensing array is improved, and the quality of the image acquired by the vision sensor is improved.
Description
Technical Field
The embodiment of the invention relates to the technical field of image sensing, in particular to a pixel sensing array and a vision sensor.
Background
The vision sensor is an instrument for acquiring external environment image information by using an optical element and an imaging device, and currently, the vision sensor in the prior art can only acquire one type of image information, for example, the existing vision sensor comprises an active pixel sensor (Active Pixel Sensor, APS) and a dynamic vision sensor (Dynamic Vision Sensor, DVS), wherein the active pixel sensor mainly senses color information, and the dynamic vision sensor mainly senses change of light intensity.
However, the lack of a sensor capable of acquiring two image information simultaneously in the prior art limits the performance and application of visual sensors. In addition, the vision sensor generally acquires image information through a pixel array formed by photosensitive devices, however, the pixel integration level of the existing vision sensor is low, and the quality of the image acquired by the vision sensor is affected.
Disclosure of Invention
The embodiment of the invention provides a pixel sensing array and a vision sensor, which are used for improving the performance of the vision sensor, widening the application scene of the vision sensor and improving the pixel integration level of the pixel sensing array.
In a first aspect, an embodiment of the present invention provides a pixel sensing array, including a pixel structure, where the pixel structure includes:
the device comprises a first pixel sensing unit and a second pixel sensing unit, wherein the first pixel sensing unit is used for receiving light rays of a first wave band, and the second pixel sensing unit is used for receiving light rays of a second wave band;
the second pixel sensing unit comprises a plurality of sub-pixel sensing units, and the sub-pixel sensing units are arranged around the first pixel sensing unit.
Optionally, the photosensitive area of the sub-pixel sensing unit is smaller than the photosensitive area of the first pixel sensing unit.
Optionally, each of the pixel structures includes one of the first pixel sensing units and one of the second pixel sensing units;
the plurality of sub-pixel sensing units encircle four side edges of the first pixel sensing unit, the number of the sub-pixel sensing units encircling each side edge of the first pixel sensing unit is equal, and one row of sub-pixel sensing units encircling the adjacent edge of the first pixel sensing unit are connected with one row of sub-pixel sensing units and share one sub-pixel sensing unit.
Optionally, the first pixel sensing unit is further configured to convert the light of the first wavelength band into an electrical signal representing light intensity information thereof; the second pixel sensing unit is further configured to convert the light of the second wavelength band into an electrical signal representing color and light intensity information thereof;
at least one of the first band and the second band includes an infrared band; alternatively, at least one of the first band and the second band includes an ultraviolet band.
Optionally, the plurality of sub-pixel sensing units include at least three sub-pixel sensing units, and the at least three sub-pixel sensing units are respectively configured to receive light rays of different color components and output an electrical signal representing light intensity information of the corresponding color component.
Optionally, in the pixel structure, the first pixel sensing unit is configured to simulate a rod cell, so as to obtain an electrical signal representing a light intensity variation of the light of the first wavelength band;
the second pixel sensing unit is used for simulating a cone cell so as to acquire an electric signal representing color light intensity information of the light rays of the second wave band.
Optionally, the second pixel sensing unit includes at least a sub-pixel sensing unit with a red center frequency, a sub-pixel sensing unit with a green center frequency, and a sub-pixel sensing unit with a blue center frequency.
Optionally, in the pixel structure, the sub-pixel sensing units surrounding each side edge of the first pixel sensing unit include a sub-pixel sensing unit with a red center frequency, a sub-pixel sensing unit with a green center frequency, and a sub-pixel sensing unit with a blue center frequency, and the center frequencies of the sub-pixel sensing units surrounding each adjacent edge of the first pixel sensing unit are the same as those of the sub-pixel sensing units shared by a column of the sub-pixel sensing units.
Optionally, the first band of wavelengths includes an infrared band of wavelengths; the first pixel sensing unit comprises a first photosensitive device, and the first photosensitive device is an infrared photosensitive device; or the first pixel sensing unit comprises a first photosensitive device and a first optical filter device arranged on the first photosensitive device, wherein the first photosensitive device is an infrared photosensitive device and/or the first optical filter device is an infrared optical filter device;
Alternatively, the first band of wavelengths includes an ultraviolet band; the first pixel sensing unit comprises a first photosensitive device, and the first photosensitive device is an ultraviolet photosensitive device; or the first pixel sensing unit comprises a first photosensitive device and a first optical filter device arranged on the first photosensitive device, wherein the first photosensitive device is an ultraviolet photosensitive device and/or the first optical filter device is an ultraviolet optical filter device.
Optionally, the sub-pixel sensing unit includes a second photosensitive device and a second filter device disposed on the second photosensitive device, and filter colors of the second filter devices in at least three sub-pixel sensing units are different.
Optionally, the second wavelength band includes an infrared wavelength band, and the second filter device includes an infrared filter device; alternatively, the second wavelength band includes an ultraviolet band, and the second filter device includes an ultraviolet filter device.
Optionally, a plurality of the pixel structures are arranged in an array to form a pixel sensing array; any two adjacent pixel structures share two adjacent rows or columns of sub-pixel sensing units.
In a second aspect, an embodiment of the present invention further provides a vision sensor, including a sensing control unit and the pixel sensing array in the first aspect;
The sensing control unit is electrically connected with the first pixel sensing unit and the second pixel sensing unit, and is used for processing light rays of the first wave band and light rays of the second wave band.
Optionally, the first pixel sensing unit is further configured to convert the light of the first wavelength band into an electrical signal representing light intensity information thereof; the second pixel sensing unit is further configured to convert the light of the second wavelength band into an electrical signal representing color and light intensity information thereof; the pixel structures are arranged in an array mode to form a pixel sensing array; any two adjacent pixel structures share one row or one column of the sub-pixel sensing units adjacent to the pixel structures;
the pixel sensing array is provided with a plurality of repeating units, wherein each repeating unit comprises three rows and three columns of pixel structures, one pixel structure positioned at the center and four pixel structures positioned at four corners; the sensing control unit is used for generating an electric signal representing the light intensity variation of the light signal of the first wave band according to the difference between at least one of the first pixel sensing units positioned at four corners in the repeating unit and the electric signal converted by the first pixel sensing unit positioned at the center.
Optionally, in a row direction of the pixel sensing array, two repeating units spaced apart share two first pixel sensing units in two adjacent pixel structures; in the column direction of the pixel sensing array, two spaced repeating units share the first pixel sensing unit in two adjacent pixel structures.
Optionally, the sensing control unit is further configured to generate an image signal according to an electrical signal representing the light intensity variation of the light signal in the first band and an electrical signal representing color light intensity information of the light ray in the second band converted by the second pixel sensing unit in the repeating unit.
The pixel sensing array provided by the embodiment of the invention comprises pixel structures, wherein each pixel structure comprises a first pixel sensing unit and a second pixel sensing unit, each pixel structure can receive light rays of a first wave band of a corresponding pixel area through the first pixel sensing unit and receive light rays of a second wave band of the corresponding pixel area through the second pixel sensing unit, and when the first wave band and the second wave band are different wave bands, the scheme can also realize that different information in a target light signal is sensed through the first pixel sensing unit and the second pixel sensing unit. The second pixel sensing unit includes a plurality of sub-pixel sensing units disposed around the first pixel sensing unit, which helps to reduce a distance between the first pixel sensing unit and the sub-pixel sensing unit in each pixel structure and reduce a distance between adjacent sub-pixel sensing units. The technical scheme of the invention is beneficial to solving the problems that the vision sensor in the prior art can only acquire single-kind image information and has low pixel integration level, is beneficial to acquiring different-kind image information through the vision sensor comprising the pixel sensor array, so as to improve the performance of the vision sensor, widen the application scene of the vision sensor, and is also beneficial to improving the pixel integration level of the pixel sensor array, thereby improving the quality of the image acquired by the vision sensor.
Drawings
Fig. 1 is a schematic diagram of a pixel structure according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of another pixel structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a pixel sensor array according to an embodiment of the present invention;
FIG. 4 is a schematic block diagram of a vision sensor according to an embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of a repeating unit according to an embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
An embodiment of the present invention provides a pixel sensing array, where the pixel sensing array includes a pixel structure, and fig. 1 is a schematic diagram of the pixel structure provided by the embodiment of the present invention, as shown in fig. 1, the pixel sensing array provided by the embodiment of the present invention includes a pixel structure 100, where the pixel structure 100 includes: the first pixel sensing unit 10 and the second pixel sensing unit, wherein the first pixel sensing unit 10 is used for receiving light rays of a first wave band, and the second pixel sensing unit is used for receiving light rays of a second wave band; the second pixel sensing unit includes a plurality of sub-pixel sensing units 21, and the plurality of sub-pixel sensing units 21 are disposed around the first pixel sensing unit 10.
The pixel sensing array provided by the embodiment of the invention can be applied to a vision sensor to collect the target light signal through the pixel sensing array, and then the target light signal is converted into a corresponding image signal or video signal through the vision sensor, wherein the target light signal can come from a static person, a dynamic person, a static scene or a dynamic scene, and the like.
Specifically, each of the first and second pixel sensing units 10 and 10 may include a photosensitive unit, and the first and second pixel sensing units 10 and 10 may be used to constitute a plurality of pixel structures in a pixel sensing array, one of which is schematically shown in fig. 1, and each of which may correspond to one pixel in an image such that each pixel structure converts an optical signal in a corresponding pixel region into a corresponding electrical signal through the first and second pixel sensing units 10 and 10 therein.
The first pixel sensing unit 10 is configured to receive light of a first wavelength band, which means that when the first pixel sensing unit 10 is capable of extracting light of the first wavelength band in the target optical signal, for example, when the first pixel sensing unit 10 includes a photosensitive unit, the light of the first wavelength band in the target optical signal can be directly extracted by the photosensitive unit and converted into a corresponding electrical signal, and when the first pixel sensing unit 10 includes the photosensitive unit and a filtering unit, the light of the first wavelength band in the target optical signal can be extracted by the filtering unit and converted into a corresponding electrical signal by the photosensitive unit. The light rays of the first wave band can be light rays of at least partial wave bands in visible light, infrared light and ultraviolet light.
Similarly, the second pixel sensing unit is configured to receive light of a second wavelength band, which means that the second pixel sensing unit is capable of extracting light of the second wavelength band in the target optical signal through the sub-pixel sensing unit 21, for example, when the sub-pixel sensing unit 21 in the second pixel sensing unit 20 includes a photosensitive unit, the light of the second wavelength band in the target optical signal can be directly extracted through the photosensitive unit, and the light of the second wavelength band is converted into a corresponding electrical signal, and when the sub-pixel sensing unit 21 in the second pixel sensing unit 20 includes the photosensitive unit and a filtering unit, the light of the second wavelength band in the target optical signal can be extracted through the filtering unit, and the light of the second wavelength band is converted into the corresponding electrical signal through the photosensitive unit. The light rays of the second wave band can be light rays of at least partial wave bands in visible light, infrared light and ultraviolet light.
The first and second bands may be the same band or different bands. When the first band and the second band are different bands, different information in the target optical signal is sensed by the first pixel sensing unit 10 and the second pixel sensing unit 20, so that performance of the vision sensor including the pixel structure is improved, and application scene of the vision sensor is widened.
Fig. 1 only schematically illustrates a case where one second pixel sensing unit includes twelve sub-pixel sensing units 21 disposed around the first pixel sensing unit 10, and in practical applications, the number of sub-pixel sensing units 21 in the second pixel sensing unit may be set according to requirements, which is not particularly limited in this embodiment. The plurality of sub-pixel sensing units 21 are disposed around the first pixel sensing unit 10, which means that the plurality of sub-pixel sensing units 21 in the second pixel sensing unit are connected end to end and around the periphery of the first pixel sensing unit 10. In the pixel sensing array of the prior art, the light sensitive area of each pixel sensing unit is equal, and different pixel sensing units in the pixel sensing array are generally alternately arranged, compared with the prior art, the second pixel sensing unit in the embodiment comprises a plurality of sub-pixel sensing units 21, and the plurality of sub-pixel sensing units 21 are arranged around the first pixel sensing unit 10, so that the first pixel sensing unit 10 can receive the light of the first wave band of the pixel area corresponding to the pixel structure 100, the plurality of sub-pixel sensing units 21 can receive the light of the second wave band around the first pixel sensing unit 10 in the pixel area, which is beneficial to determining the image signal or the video signal of the pixel area, and simultaneously, is beneficial to reducing the distance between the center of the first pixel sensing unit 10 and the center of the sub-pixel sensing unit 21 and reducing the distance between the adjacent sub-pixel sensing units 21.
The pixel sensing array provided by the embodiment of the invention comprises pixel structures, wherein each pixel structure comprises a first pixel sensing unit and a second pixel sensing unit, each pixel structure can receive light rays of a first wave band of a corresponding pixel area through the first pixel sensing unit and receive light rays of a second wave band of the corresponding pixel area through the second pixel sensing unit, and when the first wave band and the second wave band are different wave bands, the scheme can also realize that different information in a target light signal is sensed through the first pixel sensing unit and the second pixel sensing unit. The second pixel sensing unit includes a plurality of sub-pixel sensing units disposed around the first pixel sensing unit, which helps to reduce a distance between the first pixel sensing unit and the sub-pixel sensing unit in each pixel structure and reduce a distance between adjacent sub-pixel sensing units. The technical scheme of the invention is beneficial to solving the problems that the vision sensor in the prior art can only acquire single-kind image information and has low pixel integration level, is beneficial to acquiring different-kind image information through the vision sensor comprising the pixel sensor array, so as to improve the performance of the vision sensor, widen the application scene of the vision sensor, and is also beneficial to improving the pixel integration level of the pixel sensor array, thereby improving the quality of the image acquired by the vision sensor.
On the basis of the above-described scheme, optionally, referring to fig. 1, the photosensitive area of the sub-pixel sensing unit 21 is set smaller than that of the first pixel sensing unit 10.
In the pixel sensing array in the prior art, the photosensitive area of each pixel sensing unit is equal, and compared with the prior art, the embodiment of the invention sets the photosensitive area of the sub-pixel sensing unit 21 smaller than the photosensitive area of the first pixel sensing unit 10, which is helpful for reducing the distance between the first pixel sensing unit 10 and the sub-pixel sensing unit 21 in each pixel structure 100, and also for reducing the distance between adjacent sub-pixel sensing units 21, so as to improve the pixel integration level of the pixel sensing array, and further improve the image quality obtained by the vision sensor. For example, the photosensitive area of each sub-pixel sensing unit 21 may be set to be one fourth of the photosensitive area of the first pixel sensing unit 10, and compared with the arrangement mode in which the photosensitive areas of the sub-pixel sensing units 21 and the first pixel sensing units 10 are equal, each side edge of the first pixel sensing unit 10 is adjacent to two sub-pixel sensing units 21, which is helpful to improve the pixel integration of the pixel sensing array by reducing the distance between the adjacent pixel sensing units, and further improve the image accuracy obtained by the pixel sensing array.
Optionally, referring to fig. 1, each pixel structure 100 is arranged to include a first pixel sensing unit 10 and a second pixel sensing unit; the plurality of sub-pixel sensing units 21 surround four side edges of the first pixel sensing unit 10, the number of sub-pixel sensing units 21 surrounding each side edge of the first pixel sensing unit 10 is equal, and one row of sub-pixel sensing units 21 surrounding the adjacent edge of the first pixel sensing unit 10 is connected with one column of sub-pixel sensing units 21, and shares one sub-pixel sensing unit 21.
Illustratively, fig. 1 shows a case where the photosensitive areas of the first pixel sensing unit 10 and the sub-pixel sensing unit 21 are each approximately square, and description is given by taking an example where the photosensitive area of each sub-pixel sensing unit 21 is one-fourth of the photosensitive area of the first pixel sensing unit 10: one second pixel sensing unit includes twelve sub-pixel sensing units 21, twelve sub-pixel sensing units 21 surround four side edges of the first pixel sensing unit 10, four sub-pixel sensing units 21 are correspondingly arranged on each side edge of the first pixel sensing unit 10, one row of sub-pixel sensing units 21 positioned on two adjacent edges of the first pixel sensing unit 10 is connected with one column of sub-pixel sensing units 21, and one sub-pixel sensing unit 21 is shared, namely, each of the four sub-pixel sensing units 21 positioned at four corners of the pixel structure 100 is shared by one row of sub-pixel sensing units 21 and one column of sub-pixel sensing units 21 to which the sub-pixel sensing unit 21 belongs. The advantage of this arrangement is that each side edge of the first pixel sensing unit 10 is adjacent to two sub-pixel sensing units 21, and four corners of the first pixel sensing unit 10 are also adjacent to four sub-pixel sensing units 21, so that the first pixel sensing unit 10 in each pixel structure 100 is used for receiving light rays of the first waveband, the sub-pixel sensing units 21 are used for receiving light rays of the second waveband, further, image signals or video signals of a pixel area corresponding to the pixel structure 100 are determined, and meanwhile, the pixel integration level of the pixel sensing array is improved, and further, the image accuracy obtained by the pixel sensing array is improved.
On the basis of the above scheme, optionally, with continued reference to fig. 1, the first pixel sensing unit 10 is further configured to convert the light of the first wavelength band into an electrical signal representing the light intensity information thereof; the second pixel sensing unit is also used for converting the light rays of the second wave band into electric signals representing color light intensity information of the light rays; at least one of the first band and the second band includes an infrared band; alternatively, at least one of the first band and the second band includes an ultraviolet band.
Specifically, the first pixel sensing unit 10 converts the light of the first wavelength band into an electrical signal representing the light intensity information thereof, where the light intensity information is specifically the light intensity information of the light of the first wavelength band, and may also be understood as gray information corresponding to the light intensity. The second pixel sensing unit converts light rays of a second wave band into electric signals representing color light intensity information of the light rays, wherein the color light intensity information comprises absolute light intensity information and chromaticity information of light.
Illustratively, when the pixel sensor array is applied to the vision sensor, the present solution is beneficial for the vision sensor to determine the light intensity variation of the light of the first band in the corresponding pixel area according to the difference between the electrical signals converted by the first pixel sensor unit 10 in the different pixel structures 100 of the pixel sensor array, so as to increase the dynamic range of the image collected by the vision sensor and increase the shooting speed of the vision sensor, and the vision sensor can also determine the color light intensity information of the light of the second band in the corresponding pixel area according to the electrical signals converted by each sub-pixel sensor unit 21 in the second pixel sensor unit, so as to improve the color reduction degree and the image quality of the image collected by the vision sensor. The technical scheme of the embodiment is beneficial to simultaneously acquiring high-quality color light intensity signals and high-speed light intensity variation signals through the pixel structure in the pixel sensing array, and enriches the visual information of the image acquired by the pixel sensing array through the complementation of the image signals of two modes.
At least one of the first and second bands includes an infrared band, or at least one of the first and second bands includes an ultraviolet band, illustratively, the first band includes a visible band and an infrared band, and the second band includes a visible band; the first wave band and the second wave band both comprise visible light wave bands and infrared wave bands; the first wave band comprises a visible light wave band and an ultraviolet wave band, and the second wave band comprises a visible light wave band; the first and second bands both include both the visible band and the ultraviolet band. The advantage of this is that when the first and second bands are different bands, it is helpful to sense different information in the target optical signal through the first and second pixel sensing units 10 and 10, so as to improve the performance of the vision sensor including the pixel structure and widen the application scene of the vision sensor, for example, when at least one of the first and second bands includes an infrared band, the vision sensor may be applied to an infrared imaging scene, and when at least one of the first and second bands includes an ultraviolet band, the vision sensor may be applied to an ultraviolet imaging scene.
Fig. 2 is a schematic diagram of another pixel structure according to an embodiment of the present invention, optionally, on the basis of the above embodiment, a plurality of sub-pixel sensing units 21 are provided, including at least three sub-pixel sensing units 21, where the at least three sub-pixel sensing units 21 are respectively configured to receive light rays of different color components, and output an electrical signal representing light intensity information of the corresponding color component.
Illustratively, each sub-pixel sensing unit 21 may include a light sensing unit and a filtering unit, through which light of a corresponding color component is extracted and converted into an electrical signal representing light intensity information of its color component by the light sensing unit. Alternatively, the second pixel sensing unit 20 includes at least a sub-pixel sensing unit 21R having a center frequency of red, a sub-pixel sensing unit 21G having a center frequency of green, and a sub-pixel sensing unit 21B having a center frequency of blue.
The sub-pixel sensing unit 21R (hereinafter referred to as a red sub-pixel sensing unit 21R) having a red center frequency mainly extracts a red component of the light of the second wavelength band and converts it into an electrical signal representing the light intensity information of its color component. The sub-pixel sensing unit 21G (hereinafter, simply referred to as a green sub-pixel sensing unit 21G) having a center frequency of green is a sub-pixel sensing unit that mainly extracts light of a green component in light of the second wavelength band and converts it into an electric signal representing light intensity information of its color component. The sub-pixel sensing unit 21B having a center frequency of blue (hereinafter referred to as a blue sub-pixel sensing unit 21B) is a sub-pixel sensing unit that mainly extracts light of a blue component in light of the second wavelength band and converts it into an electric signal representing light intensity information of its color component. The advantage of this arrangement is that a high accuracy of the acquisition of absolute light intensity information and chromaticity information of the light rays of different color components can be achieved.
On the basis of the above-described scheme, optionally, referring to fig. 2, in the pixel structure 100, the sub-pixel sensing units 21 surrounding each side edge of the first pixel sensing unit 10 include red sub-pixel sensing units 21R, green sub-pixel sensing units 21G, and blue sub-pixel sensing units 21B, and the center frequency of the sub-pixel sensing units 21 shared by one row of sub-pixel sensing units 21 surrounding each adjacent edge of the first pixel sensing unit 10 is the same as that of the sub-pixel sensing units 21 shared by one column of sub-pixel sensing units 21.
The sub-pixel sensing units 21 surrounding each side edge of the first pixel sensing unit 10 include a red sub-pixel sensing unit 21R, a green sub-pixel sensing unit 21G and a blue sub-pixel sensing unit 21B, so that the red sub-pixel sensing unit 21R, the green sub-pixel sensing unit 21G and the blue sub-pixel sensing unit 21B surrounding any side edge of the first pixel sensing unit 10 in the pixel structure 100 can be used for acquiring absolute light intensity information and chromaticity information of light rays of different color components in the pixel region, thereby improving convenience in acquiring image information. The case where one row of sub-pixel sensing units 21 surrounding each adjacent edge of the first pixel sensing unit 10 shares a sub-pixel sensing unit 21 with one column of sub-pixel sensing units 21, that is, the sub-pixel sensing units 21 located at four corners of the pixel structure 100 may be the same as the red sub-pixel sensing units 21R, the same as the green sub-pixel sensing units 21G, or the same as the blue sub-pixel sensing units 21B, and fig. 2 schematically illustrates the case where the sub-pixel sensing units 21 located at four corners of the pixel structure 100 are the same as the blue sub-pixel sensing units 21B, by setting the center frequencies of the sub-pixel sensing units 21 shared by one row of sub-pixel sensing units 21 surrounding each adjacent edge of the first pixel sensing unit 10 and the sub-pixel sensing units 21 located at four corners of the pixel structure 100 to be the same, the scheme can realize multiplexing of the sub-pixel sensing units 21 located at four corners of the pixel structure 100, so as to enhance the pixel filling factor of the pixel sensing array.
On the basis of the above scheme, optionally, referring to fig. 2, the sub-pixel sensing units 21 shared by a row of sub-pixel sensing units 21 surrounding each adjacent edge of the first pixel sensing unit 10 and a column of sub-pixel sensing units 21 are all blue sub-pixel sensing units 21B, each sub-pixel sensing unit 21 surrounding the first pixel sensing unit 10 is arranged in a central symmetry manner with respect to the pixel structure 100, and in the pixel structure 100, the number ratio of the red sub-pixel sensing units 21R, the green sub-pixel sensing units 21G and the blue sub-pixel sensing units 21B is 1:1:1.
Illustratively, one second pixel sensing unit including twelve sub-pixel sensing units 21 is still illustrated. Four sub-pixel sensing units 21 are correspondingly arranged at each side edge of the first pixel sensing unit 10, the sub-pixel sensing units 21 positioned at four corners of the pixel structure 100 are both blue sub-pixel sensing units 21B, meanwhile, as the sub-pixel sensing units 21 are arranged in a central symmetry mode with respect to the pixel structure 100, and the number ratio of the red sub-pixel sensing units 21R, the green sub-pixel sensing units 21G to the blue sub-pixel sensing units 21B is 1:1:1, among the four sub-pixel sensing units 21 arranged at each side edge of the first pixel sensing unit 10, two sub-pixel sensing units 21 at two sides are both blue sub-pixel sensing units 21B, one of the two sub-pixel sensing units 21 in the middle is the red sub-pixel sensing unit 21R, and the other sub-pixel sensing unit 21G is the green sub-pixel sensing unit 21G. The advantage of this arrangement is that one column of three consecutive sub-pixel sensing units from the upper right sub-pixel sensing unit 21 of the pixel structure 100, one row of three consecutive sub-pixel sensing units from the lower right sub-pixel sensing unit 21 of the pixel structure 100, one column of three consecutive sub-pixel sensing units from the lower left sub-pixel sensing unit 21 of the pixel structure 100, and one row of three consecutive sub-pixel sensing units from the upper left sub-pixel sensing unit 21 of the pixel structure 100, wherein each of the three consecutive sub-pixel sensing units 21 includes the red sub-pixel sensing unit 21R, the green sub-pixel sensing unit 21G, and the blue sub-pixel sensing unit 21B, and each of the three consecutive sub-pixel sensing units 21 can be used to acquire absolute light intensity information and chromaticity information of light rays of different color components in the pixel region, thereby improving convenience of image information acquisition.
Referring to fig. 1 and 2, optionally, in the pixel structure 100, the first pixel sensing unit 10 is configured to simulate a rod cell to obtain an electrical signal representing the light intensity variation of the light of the first wavelength band; the second pixel sensing unit is used for simulating the cone cells so as to acquire an electric signal representing color light intensity information of light rays of a second wave band.
Specifically, the embodiment of the invention can simulate different visual perception cells in human retina by using the pixel structure 100 in the pixel sensing array, convert the light of the first wave band into the electric signal representing the light intensity information thereof by the first pixel sensing unit 10, and determine the electric signal representing the light intensity variation of the light of the first wave band of the corresponding pixel region according to the difference between the electric signals converted by the first pixel sensing unit 10 in different pixel structures 100 so as to simulate the video rod cells to acquire the light intensity gradient information, thereby improving the perception capability of the pixel structure to the dynamic target and increasing the dynamic range and shooting speed of the image acquired by the pixel structure; the sub-pixel sensing units 21 in the second pixel sensing units convert the light rays of the second wave band into electric signals representing the color light intensity information of the light rays, so that the cone cells are simulated to acquire the color light intensity information, and the color reproducibility and the image quality of the image acquired by the pixel structure are improved.
Referring to fig. 1 and 2, optionally, in one embodiment of the present invention, the first band of wavelengths includes an infrared band of wavelengths; the first pixel sensing unit 10 includes a first photosensitive device, which is an infrared photosensitive device.
In particular, the first photosensitive device may be a Photodiode (PD) capable of converting an optical signal into a corresponding electrical signal. When the first band includes the infrared band, the first photosensitive device may be an infrared-sensitive photosensitive device, such as an infrared photodiode. So that the first pixel sensing unit can sense the light intensity change information of the infrared rays in the target light signal through the first photosensitive device.
Alternatively, in another embodiment of the present invention, the first pixel sensing unit 10 includes a first photosensitive device and a first filter device disposed on the first photosensitive device, and the first photosensitive device is an infrared photosensitive device and/or the first filter device is an infrared filter device.
Specifically, the first filter device is used to select the wavelength band of light passing through the device, and the first filter device may be a Color filter (Color filter), or an optical lens capable of extracting an optical signal of a set component, such as a bayer lens. The first optical filter device may be disposed on the photosensitive surface of the first photosensitive device, so that the target optical signal is firstly irradiated to the surface of the first optical filter device, and the first optical filter device may extract light rays of a first wavelength band including an infrared wavelength band in the target optical signal, so that the light rays of the first wavelength band are irradiated to the photosensitive surface of the first photosensitive device, and the optical signal of the first set wavelength band is converted into a corresponding electrical signal through the first photosensitive device. According to the embodiment of the invention, the first photosensitive device is an infrared photosensitive device and/or the first optical filter device is an infrared optical filter device, so that the first pixel sensing unit is helped to sense the light intensity change information of infrared rays in the target light signal.
Alternatively, in another embodiment of the present invention, the first band of wavelengths comprises the ultraviolet band; the first pixel sensing unit 10 includes a first photosensitive device, which is an ultraviolet photosensitive device. In particular, when the first wavelength band includes an ultraviolet band, the first photosensitive device may be a photosensitive device sensitive to ultraviolet rays, such as an ultraviolet photodiode. So that the first pixel sensing unit can sense the light intensity change information of ultraviolet rays in the target light signal through the first photosensitive device.
Alternatively, in another embodiment of the present invention, the first pixel sensing unit 10 includes a first photosensitive device and a first filter device disposed on the first photosensitive device, and the first photosensitive device is an ultraviolet photosensitive device and/or the first filter device is an ultraviolet filter device. According to the embodiment of the invention, the first photosensitive device is arranged as an ultraviolet photosensitive device and/or the first optical filter device is arranged as an ultraviolet optical filter device, so that the first pixel sensing unit is helped to sense the light intensity change information of ultraviolet rays in the target light signal.
Alternatively, in another embodiment of the present invention, the sub-pixel sensing unit 21 includes a second light sensing device and a second light filtering device disposed on the second light sensing device, and the second light filtering devices in at least three sub-pixel sensing units 21 are different in filtering color.
In particular, the second photosensitive device may be a Photodiode (PD) capable of converting an optical signal into a corresponding electrical signal. The second filter device is used to select the wavelength band of light passing through the device, and the first filter device may be a Color filter (Color filter), or an optical lens capable of extracting a light signal of a set component, such as a bayer lens. The second optical filter device may be disposed on a photosensitive surface of the second optical sensor, and after the second optical filter device extracts an optical signal of a second band in the target optical signal, the second optical filter device may convert light of the second band into a corresponding electrical signal.
Illustratively, when the second pixel sensing unit includes the sub-pixel sensing unit 21R having a red center frequency, the sub-pixel sensing unit 21G having a green center frequency, and the sub-pixel sensing unit 21B having a blue center frequency, the second filter devices corresponding to the sub-pixel sensing unit 21R having a red center frequency, the sub-pixel sensing unit 21G having a green center frequency, and the sub-pixel sensing unit 21B having a blue center frequency are the red, green, and blue second filter devices, respectively. When the target optical signal is irradiated to the second pixel sensing unit, the second filter device in each sub-pixel sensing unit 21 extracts the optical signal of the red band, the optical signal of the green band and the optical signal of the blue band in the target optical signal, respectively, so that the second photosensitive device in the second pixel sensing unit can convert the optical signal of the corresponding band into the corresponding electrical signal. The second pixel sensing unit realizes the high-precision acquisition of absolute light intensity information and chromaticity information of different components of the optical signals by sensing the different components of the optical signals in the target optical signals.
Alternatively, on the basis of the above-described aspect, when the second wavelength band includes an infrared wavelength band, the second filter device includes an infrared filter device. Therefore, the second pixel sensing unit can sense the light signal of the red light component, the light signal of the green light component and the light signal of the blue light component in the target light signal, and also can sense the light signal of the infrared component, so that the sensing capability of the pixel structure on the color light intensity information of the infrared rays in the target light signal is improved. Alternatively, when the second wavelength band includes an ultraviolet band, the second filter device includes an ultraviolet filter device. Therefore, the second pixel sensing unit can sense the light signal of the red light component, the light signal of the green light component and the light signal of the blue light component in the target light signal, and also can sense the light signal of the ultraviolet component, so that the sensing capability of the pixel structure on the color light intensity information of ultraviolet rays in the target light signal is improved.
Fig. 3 is a schematic structural diagram of a pixel sensor array according to an embodiment of the present invention, where the pixel sensor array may include the pixel structure 100 shown in fig. 1 or fig. 2. Referring to fig. 1 to 3, optionally, a plurality of pixel structures 100 are arranged in an array to form a pixel sensing array on the basis of the above aspects; any two adjacent pixel structures 100 share a row or column of sub-pixel sensing units 21 adjacent to each other.
Specifically, each pixel structure 100 in the pixel sensing array may correspond to one pixel in an image, such that each pixel structure 100 converts an optical signal in a corresponding pixel region into a corresponding electrical signal through the first pixel sensing unit 10 and the second pixel sensing unit therein.
Any two adjacent pixel structures 100 share two adjacent rows or columns of sub-pixel sensing units 21, which means that any two adjacent pixel structures 100 in each row share two adjacent columns of sub-pixel sensing units 21, that is, the column of sub-pixel sensing units 21 belong to two adjacent pixel structures 100 at the same time, the two adjacent pixel structures 100 can use the column of sub-pixel sensing units 21 to receive light rays of the second wave band, and any two adjacent pixel structures 100 in each column share two adjacent rows of sub-pixel sensing units 21, that is, the row of sub-pixel sensing units 21 belong to two adjacent pixel structures 100 at the same time, and the two adjacent pixel structures 100 can use the row of sub-pixel sensing units 21 to receive light rays of the second wave band. Illustratively, in the first row of the pixel structure 100 of the pixel sensing array, the first pixel structure 100 and the second pixel structure 100 share a column of the sub-pixel sensing units 21 adjacent to each other, that is, a column of the sub-pixel sensing units 21 located on the right side of the first pixel sensing unit 10 of the first pixel structure 100 may be shared by the first pixel structure 100 and the second pixel structure 100, and in the first column of the pixel structure 100 of the pixel sensing array, the first pixel structure 100 and the second pixel structure 100 share a row of the sub-pixel sensing units 21 adjacent to each other, that is, a row of the sub-pixel sensing units 21 located under the first pixel sensing unit 10 of the first pixel structure 100 may be shared by the first pixel structure 100 and the second pixel structure 100. The advantage of this embodiment is that not only is multiplexing of the sub-pixel sensing units in the adjacent pixel structure achieved, but also the pixel filling factor of the pixel sensing array is facilitated to be improved.
The embodiment of the invention also provides a visual sensor, and fig. 4 is a schematic block diagram of a visual sensor provided by the embodiment of the invention, as shown in fig. 1 to fig. 4, where the visual sensor provided by the embodiment of the invention includes a sensing control unit 30 and a pixel sensing array in any of the above embodiments of the invention; the sensing control unit 30 is electrically connected to the first pixel sensing unit 10 and the second pixel sensing unit 20, and the sensing control unit 30 is configured to process light of the first wavelength band and light of the second wavelength band.
Illustratively, the first pixel sensing unit 10 can extract light of a first wavelength band in the target optical signal and convert the light of the first wavelength band into a corresponding electrical signal, the second pixel sensing unit 20 can extract light of a second wavelength band in the target optical signal through the sub-pixel sensing unit 21 therein and convert the light of the second wavelength band into a corresponding electrical signal, and the sensing control unit 30 can process the electrical signal converted by the first pixel sensing unit 10 and the electrical signal converted by the sub-pixel sensing unit 21 in the second pixel sensing unit 20 to obtain image information of the pixel region corresponding to each pixel structure 100 in the pixel sensing array.
The vision sensor provided by the embodiment of the invention comprises the pixel sensing array provided by any embodiment of the invention, so that the vision sensor has the corresponding functional structure and beneficial effects of the pixel sensing array, and the details are not repeated here.
FIG. 5 is a schematic diagram of a repeating unit provided in an embodiment of the present invention, where the repeating unit may be a repeating unit in the pixel sensor array shown in FIG. 3. Referring to fig. 1 to 5, optionally, the first pixel sensing unit 10 is further configured to convert the light of the first wavelength band into an electrical signal representing the light intensity information thereof; the second pixel sensing unit 20 is further configured to convert the light of the second wavelength band into an electrical signal representing color light intensity information thereof; the pixel structures 100 are arranged in an array to form a pixel sensing array; any two adjacent pixel structures 100 share a row or column of sub-pixel sensing units 21 adjacent to each other; the pixel sensing array is provided with a plurality of repeating units, and each repeating unit comprises one pixel structure 100 positioned at the center of three rows and three columns of pixel structures 100 and four pixel structures 100 positioned at four corners; the sensing control unit 30 is configured to generate an electrical signal representing an amount of change in light intensity of the optical signal of the first wavelength band according to a difference between at least one of the first pixel sensing units 10 (i.e., the first pixel sensing units 10 b) located at four corners of the repeating unit and the electrical signal converted by the first pixel sensing unit 10 (i.e., the first pixel sensing unit 10 a) located at the center.
Fig. 3 shows a case where the even-numbered pixel structures 100 in the pixel sensor array include the first pixel sensor unit 10a, and the odd-numbered pixel structures 100 include the first pixel sensor unit 10b, that is, the even-numbered pixel structures 100 in the pixel sensor array serve as the pixel structures 100 in the center in the repeating unit, in practical application, in any three rows and three columns of pixel structures 100 in the pixel sensor array, one pixel structure 100 in the center and four pixel structures 100 in four corners can form one repeating unit, and the sensing control unit 30 can perform differential operation on the values corresponding to the electrical signals converted by the first pixel sensor unit 10a in the pixel structure 100 in the center in each repeating unit and the electrical signals converted by the first pixel sensor unit 10b in the pixel structure 100 in four corners to obtain differential signals, so as to simulate the excited rod cells and the inhibited rod cells of human eyes to acquire the electrical signals representing the light intensity variation of the light of the pixel region, thereby enhancing the sensing capability of the visual sensor on the dynamic target, increasing the visual sensor acquisition range of the visual sensor, and improving the visual photographing speed of the dynamic sensor.
Illustratively, the sensing control unit 30 may perform a difference with the values corresponding to the electrical signals converted by any one of the four first pixel sensing units 10b only according to the values corresponding to the electrical signals converted by the first pixel sensing units 10a to obtain a differential signal; alternatively, the sensing control unit 30 may also perform a difference with an average value of the values corresponding to the electrical signals converted by any two of the four first pixel sensing units 10b according to the values corresponding to the electrical signals converted by the first pixel sensing units 10a, so as to obtain a differential signal; alternatively, the sensing control unit 30 may also perform a difference with an average value of the values corresponding to the electrical signals converted by any three of the four first pixel sensing units 10b according to the values corresponding to the electrical signals converted by the first pixel sensing units 10a, so as to obtain a differential signal; alternatively, the sensing control unit 3 may further perform a difference between the average value of the values corresponding to the electrical signals converted by the four first pixel sensing units 10b according to the values corresponding to the electrical signals converted by the first pixel sensing units 10a, so as to obtain the differential signal.
Referring to fig. 1 to 5, optionally, in the row direction of the pixel sensing array, two repeating units spaced apart share two first pixel sensing units 10 in two adjacent two pixel structures 100; in the column direction of the pixel sensing array, adjacent repeating units share the first pixel sensing unit 10 in both adjacent two pixel structures 100.
In fig. 3, three repeating units in the pixel sensor array, that is, two repeating units in the first three rows of pixel structures 100 and two repeating units in the last three rows of pixel structures 100 are shown highlighted by thick lines, and these three repeating units are illustrated as examples. Illustratively, in the row direction of the pixel sensing array, two repeating units spaced apart refer to a first and a third repeating unit in the first three rows of pixel structures 100, wherein the first repeating unit refers to a repeating unit centered on the second pixel structure 100 of the second row, and the third repeating unit refers to a repeating unit centered on the fourth pixel structure 100 of the second row, and the first and third repeating units are spaced apart by one repeating unit, i.e., a repeating unit centered on the third pixel structure 100 of the second row. In the row direction of the pixel sensor array, two repeating units spaced apart from each other share two first pixel sensor units 10b in two pixel structures 100 adjacent to each other, i.e., a first and a third repeating unit in the first three row of pixel structures 100, share a first pixel sensor unit 10b in two pixel structures 100 on the right side of the first repeating unit, and are also first pixel sensor units 10b in two pixel structures 100 on the left side of the third repeating unit, i.e., a first pixel sensor unit 10b in a third column of pixel sensor array and a first pixel sensor unit 10b in a third column of pixel structures 100. When the first repeating unit in the first three-row pixel structure 100 acquires the differential signal according to the first pixel sensing unit 10a and the two first pixel sensing units 10b on the right side, the third repeating unit in the first three-row pixel structure 100 may also acquire the differential signal according to the two first pixel sensing units 10b and the first pixel sensing unit 10a thereof, so as to obtain an electrical signal representing the light intensity variation of the optical signal of the first band in the corresponding pixel region.
Similarly, in the column direction of the pixel sensing array, two repeating units spaced apart from each other refer to a first repeating unit and a third repeating unit in the first three columns (three columns from the left) of the pixel structures 100, wherein the first repeating unit refers to a repeating unit centered on the second pixel structure 100 of the second row, the third repeating unit refers to a repeating unit centered on the second pixel structure 100 of the fourth row, and one repeating unit is spaced apart between the first and third repeating units, that is, a repeating unit centered on the second pixel structure 100 of the third row. In the column direction of the pixel sensing array, two repeating units spaced apart from each other share two first pixel sensing units 10b in two pixel structures 100 adjacent to each other, that is, a first and a third repeating unit in the first three-column pixel structure 100, share a first pixel sensing unit 10b in two pixel structures 100 below the first repeating unit, and the two first pixel sensing units 10b are also first pixel sensing units 10b in two pixel structures 100 above the third repeating unit, that is, a first pixel sensing unit 10b in a third row first and a third row third pixel structure 100 of the pixel sensing array. When the first repeating unit in the first three-column pixel structure 100 acquires the differential signal according to the first pixel sensing unit 10a and the two first pixel sensing units 10b below, the third repeating unit in the first three-column pixel structure 100 may also acquire the differential signal according to the two first pixel sensing units 10b and the first pixel sensing unit 10a thereof, so as to obtain an electrical signal representing the light intensity variation of the optical signal of the first band in the corresponding pixel region. The advantage of this embodiment is that the repeating unit can simulate the excited rod cells and the suppressed rod cells of the human eye to obtain the electric signals representing the light intensity variation of the light rays in the pixel area, so as to improve the sensing capability of the vision sensor on the dynamic target, increase the dynamic range of the image acquired by the vision sensor, improve the shooting speed of the vision sensor, and further facilitate the improvement of the pixel filling factor of the pixel sensing array.
Referring to fig. 1 to 5, the sensing control unit 30 is optionally further configured to generate an image signal according to an electrical signal representing the amount of change in light intensity of the light signal of the first wavelength band and an electrical signal representing color light intensity information of the light of the second wavelength band converted by the second pixel sensing unit 20 in the repeating unit.
The sensing control unit 30 may also convert the light of the second wavelength band into an electrical signal representing the color intensity information thereof through the sub-pixel sensing unit 21 in the second pixel sensing unit 20 to simulate a cone cell to acquire the color intensity information. Preferably, the sensing control unit 30 may perform a difference between the average value of the values corresponding to the electrical signals converted by the first pixel sensing units 10a in each repeating unit and the average value of the values corresponding to the electrical signals converted by the four first pixel sensing units 10b to obtain a differential signal, thereby generating an electrical signal representing the light intensity variation of the optical signal of the first band, and convert the light of the second band into an electrical signal representing the color light intensity information thereof through each sub-pixel sensing unit 21 surrounding the first pixel sensing unit 10a in the repeating unit, so as to simultaneously obtain a high-quality color light intensity signal and a high-speed light intensity variation signal through the repeating unit, and obtain an image signal of a corresponding pixel area through the sensing control unit according to the color light intensity signal and the light intensity variation signal obtained by each repeating unit, thereby enriching the visual information of the image obtained by the visual sensor.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (13)
1. A pixel sensing array comprising a pixel structure, the pixel structure comprising:
the device comprises a first pixel sensing unit and a second pixel sensing unit, wherein the first pixel sensing unit is used for receiving light rays of a first wave band, and the second pixel sensing unit is used for receiving light rays of a second wave band;
the second pixel sensing unit comprises a plurality of sub-pixel sensing units, and the sub-pixel sensing units are arranged around the first pixel sensing unit;
the first pixel sensing unit is used for simulating a video rod cell so as to acquire an electric signal representing the light intensity variation of the light rays of the first wave band;
The second pixel sensing unit is used for simulating a cone cell so as to acquire an electric signal representing color light intensity information of the light rays of the second wave band; the first pixel sensing unit is further used for converting the light rays of the first wave band into electric signals representing the light intensity information of the light rays; the second pixel sensing unit is further configured to convert the light of the second wavelength band into an electrical signal representing color and light intensity information thereof; the pixel structures are arranged in an array mode to form a pixel sensing array; any two adjacent pixel structures share one row or one column of the sub-pixel sensing units adjacent to the pixel structures;
the pixel sensing array is provided with a plurality of repeating units, wherein each repeating unit comprises three rows and three columns of pixel structures, one pixel structure positioned at the center and four pixel structures positioned at four corners;
the first pixel sensing units located at the center in each repeating unit transmit the converted electric signals to a sensing control unit, and at least one of the first pixel sensing units located at four corners transmits the converted electric signals to the sensing control unit, so that the sensing control unit performs differential operation with the at least one of the first pixel sensing units located at four corners based on the electric signals converted by the first pixel sensing units located at the center in the repeating units, and generates differential signals representing the light intensity variation of the optical signals of the first band.
2. The pixel sensor array of claim 1, wherein the subpixel sensor cell has a photosensitive area that is smaller than the photosensitive area of the first pixel sensor cell.
3. The pixel sensor array of claim 1, wherein each of said pixel structures comprises one of said first pixel sensor cell and one of said second pixel sensor cell;
the plurality of sub-pixel sensing units encircle four side edges of the first pixel sensing unit, the number of the sub-pixel sensing units encircling each side edge of the first pixel sensing unit is equal, and one row of sub-pixel sensing units encircling the adjacent edge of the first pixel sensing unit are connected with one row of sub-pixel sensing units and share one sub-pixel sensing unit.
4. The pixel sensing array of claim 3, wherein at least one of the first band of wavelengths and the second band of wavelengths comprises an infrared band of wavelengths; alternatively, at least one of the first band and the second band includes an ultraviolet band.
5. The pixel sensor array of claim 4, wherein the plurality of sub-pixel sensor cells comprises at least three of the sub-pixel sensor cells, each of the at least three sub-pixel sensor cells configured to receive light of a different color component and output an electrical signal indicative of light intensity information of the corresponding color component.
6. The pixel sensor array of claim 1, wherein the second pixel sensor cell comprises at least a red center frequency sub-pixel sensor cell, a green center frequency sub-pixel sensor cell, and a blue center frequency sub-pixel sensor cell.
7. The pixel sensor array of claim 4, wherein the first band of wavelengths comprises the infrared band of wavelengths; the first pixel sensing unit comprises a first photosensitive device, and the first photosensitive device is an infrared photosensitive device; or the first pixel sensing unit comprises a first photosensitive device and a first optical filter device arranged on the first photosensitive device, wherein the first photosensitive device is an infrared photosensitive device and/or the first optical filter device is an infrared optical filter device;
alternatively, the first band of wavelengths includes an ultraviolet band; the first pixel sensing unit comprises a first photosensitive device, and the first photosensitive device is an ultraviolet photosensitive device; or the first pixel sensing unit comprises a first photosensitive device and a first optical filter device arranged on the first photosensitive device, wherein the first photosensitive device is an ultraviolet photosensitive device and/or the first optical filter device is an ultraviolet optical filter device.
8. The pixel sensing array according to claim 5, wherein the sub-pixel sensing units comprise a second light sensing device and a second light filtering device disposed on the second light sensing device, wherein the second light filtering devices in at least three of the sub-pixel sensing units have different filter colors.
9. The pixel sensor array of claim 8, wherein the second wavelength band comprises an infrared wavelength band and the second filter device comprises an infrared filter device; alternatively, the second wavelength band includes an ultraviolet band, and the second filter device includes an ultraviolet filter device.
10. The pixel sensing array according to any one of claims 1-9, wherein a plurality of the pixel structures are arranged in an array to form the pixel sensing array; any two adjacent pixel structures share two adjacent rows or columns of sub-pixel sensing units.
11. A vision sensor comprising a sensing control unit and a pixel sensing array according to any one of claims 1-10;
the sensing control unit is electrically connected with the first pixel sensing unit and the second pixel sensing unit, and is used for processing light rays of the first wave band and light rays of the second wave band.
12. The vision sensor of claim 11, wherein in a row direction of the pixel sensing array, two of the repeating units that are spaced apart share two of the first pixel sensing units in two of the pixel structures that are adjacent to each other; in the column direction of the pixel sensing array, two spaced repeating units share the first pixel sensing unit in two adjacent pixel structures.
13. The vision sensor of claim 11, wherein the sensing control unit is further configured to generate an image signal based on an electrical signal representing an amount of change in light intensity of the light signal of the first wavelength band and an electrical signal representing color light intensity information of the light of the second wavelength band converted by the second pixel sensing unit in the repeating unit.
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