WO2022196875A1 - 멤리스터를 이용하여 발광소자를 제어하는 디스플레이 장치 및 방법 - Google Patents
멤리스터를 이용하여 발광소자를 제어하는 디스플레이 장치 및 방법 Download PDFInfo
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- WO2022196875A1 WO2022196875A1 PCT/KR2021/011589 KR2021011589W WO2022196875A1 WO 2022196875 A1 WO2022196875 A1 WO 2022196875A1 KR 2021011589 W KR2021011589 W KR 2021011589W WO 2022196875 A1 WO2022196875 A1 WO 2022196875A1
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- voltage
- light emitting
- memristor
- switching unit
- resistance state
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- 239000010409 thin film Substances 0.000 claims abstract description 47
- 230000008859 change Effects 0.000 claims description 7
- 230000008569 process Effects 0.000 description 14
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- 238000004519 manufacturing process Methods 0.000 description 2
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/30—Driver circuits
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
- G09G2300/0866—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes by means of changes in the pixel supply voltage
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0243—Details of the generation of driving signals
- G09G2310/0251—Precharge or discharge of pixel before applying new pixel voltage
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0262—The addressing of the pixel, in a display other than an active matrix LCD, involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependent on signals of two data electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/043—Preventing or counteracting the effects of ageing
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/028—Generation of voltages supplied to electrode drivers in a matrix display other than LCD
Definitions
- the present invention relates to a display apparatus and method for controlling a light emitting device using a memristor.
- the present invention is based on personal basic research (Ministry of Science and ICT) (R&D) (Project No.: 1711112266, Project No.: 2016R1A3B1908249, Research Project Name: Glass Transparent Electrode-based High Efficiency Optoelectronic Device Research, Organized by: National Research Foundation of Korea) , the research period: 2020.03.01 ⁇ 2021.02.28).
- an active driving method is used for high-resolution displays or moving images that require a fast screen.
- Active driving is a thin film transistor (TFT), which acts as a switch for each pixel, and a capacitor (
- the basic structure is a '2T 1C' structure in which a driving transistor (T2) that controls the amount of current flowing through the pixel is connected. It is a driving method that is maintained during the frame.
- TFT thin film transistor
- T2T 1C' structure in which a driving transistor (T2) that controls the amount of current flowing through the pixel is connected. It is a driving method that is maintained during the frame.
- An embodiment of the present invention aims to provide a display driving apparatus and method for providing an active display driving circuit capable of minimizing a volume and simplifying a structure by using a memristor element.
- a light emitting unit configured to include a light emitting device; a driving unit including a memristor and configured to drive the light emitting unit; and a switching unit including a switching thin film transistor, the switching unit configured to determine whether to apply a data voltage to the driving unit according to a scan voltage, the display driving apparatus may be provided.
- the driving unit a display driving device configured to be connected to a first node branched to the light emitting unit and the switching unit may be provided.
- the switching unit the first node; the gate line for receiving a scan voltage; and a display driving device configured to be connected to a data line for receiving a data voltage.
- the switching unit may be configured to apply the data voltage input from the data line to the first node when the scan voltage is input from the gate line.
- the light emitting unit includes: the first node and; A display driving device configured to be connected to a high potential voltage supply line for receiving a high potential voltage may be provided.
- a set voltage which is a voltage for changing the state of the memristor from a high resistance state to a low resistance state
- a reset voltage which is a voltage for changing the state of the memristor from a low resistance state to a high resistance state
- the driving unit when the set voltage is applied to the first node, do not drive the light emitting unit, the memristor state changes to a low resistance state; driving the light emitting unit when the data voltage is not applied to the first node; When the reset voltage is applied to the first node, the light emitting unit is not driven but the memristor is configured to change state to a high resistance state.
- the set voltage exceeds a difference between the high potential voltage and the driving voltage of the light emitting device; Below the high potential voltage, a display driving device may be provided.
- the reset voltage exceeds: a difference between the high potential voltage and a driving voltage of the light emitting element; A display driving device that is less than the set voltage may be provided.
- the switching unit includes a first switching unit and a second switching unit, and the gate line is a first gate line to which a scan voltage for an operation of the first switching unit is applied and a scan voltage for an operation of the second switching unit is applied to the gate line.
- a second gate line may be included, and the data line may include a first data line to which a set voltage is applied and a second data line to which a reset voltage is applied.
- the first switching unit may include: the first node; the first gate line; and connected to the first data line.
- the second switching unit may include: the first node; the second gate line; and connected to the second data line.
- a display driving method performed by the display driving device, the method comprising: (a) applying a high potential voltage to a high potential voltage supply line; (b) applying a scan voltage, which is a voltage for turning on the switching unit, to the gate line; (c) applying a set voltage, which is a voltage for changing the state of the driver from the high resistance state to the low resistance state, to the data line; (d) turning off the switching unit by removing the scan voltage applied to the gate line; (e) removing the high potential voltage applied to the high potential voltage supply line; (f) applying a scan voltage, which is a voltage for turning on a switching unit, to the gate line; (g) applying a reset voltage, which is a voltage for changing the state of the driving unit from a low resistance state to a high resistance state, to the data line; and (h) removing the scan voltage applied to the gate line and the reset voltage applied to the data line.
- a display driving method performed by the display driving device, the method comprising: (a) applying a high potential voltage to a high potential voltage supply line; (b) applying a scan voltage, which is a voltage for turning on the first switching unit, to the first gate line; (c) a set voltage which is a voltage for changing the state of the driving unit from a high resistance state to a low resistance state on the first data line applying the ; (d) turning off the first switching unit by removing the scan voltage applied to the first gate line; (e) removing the high potential voltage applied to the high potential voltage supply line; (f) applying a scan voltage, which is a voltage for turning on the second switching unit, to the second gate line; (g) applying a reset voltage, which is a voltage for changing the state of the driver from a low resistance state to a high resistance state, to the second data line; and (h) removing the scan voltage applied to the second gate line and the reset voltage applied to the second data line.
- a display driving apparatus and method may provide an active display driving circuit capable of minimizing a volume and simplifying the structure by utilizing a memristor element.
- 1 is a diagram illustrating a conventional display driving device 9 .
- FIG. 2 is a view showing the operation process of the conventional display driving device 9 for each step.
- FIG. 3 is a view showing the display driving apparatus 10a according to the first embodiment of the present invention through the light emitting unit 100 , the driving unit 200 , and the switching unit 300 .
- FIG. 4 is a view showing in more detail the display driving apparatus 10a according to the first embodiment of the present invention.
- 5 is a graph illustrating a relationship between a voltage and a current of the memristor 210 .
- FIG. 6 is a view showing the operation process of the display driving apparatus 10a according to the first embodiment of the present invention for each step.
- 7A is a graph illustrating electrical characteristics of the light emitting device 110 provided as an LED having a size of 30 micrometers.
- 7B is a graph illustrating electrical characteristics of the light emitting device 110 provided as an LED having a size of 50 micrometers.
- 7C is a graph illustrating electrical characteristics of the light emitting device 110 provided as an LED having a size of 100 micrometers.
- FIG 8 is a graph showing the required resistance range of the memristor 210 when a 30 micrometer-sized micro LED is used as the light emitting device 110 .
- FIG. 9 is a graph showing the required resistance range of the memristor 210 when using a micro LED having a size of 50 micrometers as the light emitting device 110 .
- FIG. 10 is a graph showing the required resistance range of the memristor 210 when a micro LED having a size of 100 micrometers is used as the light emitting device 110 .
- FIG. 11 is a flowchart illustrating a display driving method ( S10a ) according to the first embodiment of the present invention.
- FIG. 12 is a view showing the display driving apparatus 10b according to the second embodiment of the present invention through the light emitting unit 100, the driving unit 200, the first switching unit 300a, and the second switching unit 300b. .
- FIG. 13 is a view showing in more detail the display driving apparatus 10b according to the second embodiment of the present invention.
- FIG. 14 is a diagram illustrating an operation process of the display driving apparatus 10b according to the second embodiment of the present invention for each step.
- FIG. 15 is a flowchart illustrating a display driving method ( S10 ) according to a second embodiment of the present invention.
- FIG. 1 is a view showing an existing display driving device 9
- FIG. 2 is a view showing an operation process of the existing display driving device 9 for each step.
- a conventional display driving device 9 includes a light emitting device 110 included in a light emitting unit 100 , a driving thin film transistor 220 and a storage capacitor 230 included in the driving unit 200 , and , and a switch thin film transistor 310 included in the switching unit 300 .
- the conventional display driving apparatus 9 operates through the processes of steps 1 to 6.
- the high potential voltage 41 is applied through the high potential voltage supply line 40 (step 1).
- a scan voltage 21 capable of turning on the switch thin film transistor 310 is applied to the gate terminal of the switch thin film transistor 310 through the gate line 20 (step 2).
- a data voltage 31 capable of turning on the driving thin film transistor 220 is applied to the gate terminal of the driving thin film transistor 220 through the data line 30 (step 3).
- the amount of current that can flow through the driving thin film transistor 220 is determined according to the voltage value of the data voltage 31 applied to the driving thin film transistor 220 , and the brightness of the light emitting device 110 can be determined based on this. .
- step 4 the scan voltage 21 applied to the gate terminal of the switch thin film transistor 310 is removed to turn off the switch thin film transistor 310.
- the charge stored in the storage capacitor 230 is applied to the gate terminal of the driving thin film transistor 220 to allow a current to flow through the driving thin film transistor 220 (step 5).
- the amount of charge stored in the storage capacitor 230 may be an amount of charge that can be turned on during one frame of the driving thin film transistor 220 .
- the conventional display driving device 9 allows the light emitting device 110 to operate for one frame through the steps of steps 1 to 6 described above.
- the micro display to which the micro light emitting device is applied is structurally simpler and has a driving circuit that occupies only a small space. is being demanded
- the driving thin film transistor 220 and the storage capacitor 230 included in the driving unit 200 are replaced with the memristor 210 .
- a circuit is proposed.
- FIG. 3 is a view showing the display driving apparatus 10a according to the first embodiment of the present invention through the light emitting unit 100, the driving unit 200, and the switching unit 300
- FIG. 4 is the first embodiment of the present invention. It is a diagram showing the display driving apparatus 10a according to an example in more detail.
- the display driving device 10a includes a light emitting unit 100 , a driving unit 200 , and a switching unit 300 , like the conventional display driving device 9 .
- the conventional display driving device 9 includes the driving thin film transistor 220 and the storage capacitor 230 , but the display driving device 10a includes the memristor 210 . There is a difference in point.
- the memristor 210 has the same characteristics as the storage capacitor 230 included in the conventional display driving device 9 that can maintain the amount of current flowing for one frame, and the driving included in the existing display driving device 9 .
- the thin film transistor 220 it is a device having all of the characteristics of controlling the amount of current.
- the driving thin film transistor 220 of the conventional display driving device 9 is used by using the memristor 210 having both the characteristic of maintaining the amount of current flowing for one frame and the characteristic of controlling the amount of current. ) and the storage capacitor 230 may be substituted.
- 5 is a graph illustrating a relationship between a voltage and a current of the memristor 210 .
- the memristor 210 has a characteristic that can control the amount of current.
- the memristor 210 has a set voltage and a reset voltage.
- the set voltage refers to a voltage that changes the state of the memristor 210 from a high resistance state to a low resistance state
- the reset voltage refers to a voltage that changes the state of the memristor 210 from a low resistance state to a high resistance state.
- the memristor 210 of FIG. 5 when the voltage is less than 2.6 volts, a current of 10 ⁇ -4 amps flows, and when the voltage exceeds 2.6 volts, a current of 10 ⁇ -3 amps flows. can be checked This means that the resistance of the memristor 210 is converted from a high resistance state to a low resistance state, and therefore it can be seen that the memristor 210 in FIG. 5 has a set voltage value of 2.6 volts.
- the memristor 210 has a set voltage that is converted from a high resistance state to a low resistance state, and a reset voltage that is converted from a low resistance state to a high resistance state, and the voltage value applied to the memristor 210 is set. It can be seen that there is a characteristic of maintaining the previously stored resistance value as it is until the voltage or the reset voltage is reached.
- the structure of the display driving apparatus 10a according to the first embodiment of the present invention, including the memristor 210 having such characteristics, will be described in more detail as follows.
- the light emitting unit 100 is configured to include the light emitting device 110 .
- the driving unit 200 includes the memristor 210 and is configured to drive the light emitting unit 100 .
- the switching unit 300 includes a switch thin film transistor 310 and is configured to determine whether to apply the data voltage 31 to the driver 200 according to the scan voltage 21 .
- the driving unit 200 may be connected to the first node 11 , and the other end may be connected to GND (ground).
- the first node 11 refers to a node connected to the light emitting unit 100 , the driving unit 200 , and the switching unit 300 .
- the driving unit 200 includes the light emitting unit 100 and the switching unit 300 . It may be configured to be connected to the branched first node 11 .
- the driving unit 200 may include the memristor 210 , and thus one end of the memristor 210 may be connected to the first node 11 , and the other end may be connected to GND (ground).
- the switching unit 300 may be configured to be connected to the first node 11 , the gate line 20 for receiving the scan voltage 21 , and the data line 30 for receiving the data voltage 31 .
- the switching unit 300 may include the switch thin film transistor 310 , and thus a gate terminal of the switch thin film transistor 310 may be connected to the gate line 20 , and a drain terminal of the switch thin film transistor 310 may be connected to the first node ( 11 ), and the source terminal may be connected to the data line 30 .
- the switching unit 300 receives the data voltage 31 input from the data line 30 when the scan voltage 21 is input from the gate line 20 . ) may be configured to apply to the first node 11 .
- the light emitting unit 100 may be configured to be connected to the first node 11 and the high potential voltage supply line 40 for receiving the high potential voltage 41 .
- the light emitting unit 100 may include the light emitting device 110 , and thus the light emitting device 110 may be connected to the first node 11 and the high potential voltage supply line 40 .
- FIG. 6 is a view showing the operation process of the display driving apparatus 10a according to the first embodiment of the present invention for each step.
- the display driving apparatus 10a operates through steps 1 to 9 .
- the high potential voltage 41 is applied through the high potential voltage supply line 40 (step 1).
- the memristor 210 may be in a high resistance state.
- a scan voltage 21 capable of turning on the switch thin film transistor 310 is applied to the gate terminal of the switch thin film transistor 310 through the gate line 20 (step 2).
- a set voltage which is a voltage capable of changing the state of the memristor 210 to a low resistance state, is applied to the data line 30 (step 3).
- the data voltage 31 that can be applied to the data line 30 is a set voltage that can change the state of the memristor 210 from a high resistance state to a low resistance state, and the memristor 210 . It may be any one of a reset voltage, which is a voltage that can change a state from a low resistance state to a high resistance state.
- step 3 as described above, the set voltage among the set voltage and the reset voltage is applied as the data voltage 31 . Since the switched thin film transistor 310 is turned on, the set voltage may be applied to the first node 11 .
- the voltage value of the set voltage applied to the memristors 210 may be set to different values for each memristor 210 .
- the set voltage value in step 3 of the present invention exceeds the difference between the high potential voltage 41 value and the driving voltage value of the light emitting device 110 and may be set to a value less than the high potential voltage 41 value. have. This is to prevent the light emitting device 110 from being driven when the set voltage is applied to the first node 11 .
- the set voltage may be provided in a range of 2.2 volts to 5 volts.
- step 4 the scan voltage 21 applied to the gate terminal of the switch thin film transistor 310 is removed to turn off the switch thin film transistor 310 (step 4). At this time, the current generated by the high potential voltage 41 flows along the light emitting device 110 and the memristor 210 .
- the current flows along the light emitting device 110 and the memristor 210 for one frame (step 5) .
- the amount of charge stored in the memristor 210 may be an amount of charge that allows current to flow through the light emitting device 110 and the memristor 210 for one frame.
- the switch thin film transistor 310 When the switch thin film transistor 310 is turned off, the current generated by the high potential voltage 41 flows to the GND (ground) along the light emitting device 110 and the memristor 210, which causes the light emitting device 110 to turn off. will glow
- the set voltage applied in step 3 changes the memristor 210 to a low resistance state.
- a difference in brightness may occur when the light emitting device 110 emits light. have.
- the amount of current flowing through the light emitting device 110 varies according to the resistance value in the low resistance state of the memristor 210 , and thus the brightness of the light emitting device 110 can be adjusted.
- the low resistance state of the memristor 210 must be provided in a plurality of levels (multi-level states). A device may be used.
- FIG. 7a is a graph showing the electrical characteristics of the light emitting device 110 provided as a 30 micrometer-sized LED
- FIG. 7b is a graph showing the electrical characteristics of the light emitting device 110 provided as a 50 micrometer-sized LED
- FIG. 7c is a graph showing electrical characteristics of the light emitting device 110 provided as an LED having a size of 100 micrometers.
- micro LEDs of 30 micrometers, 50 micrometers, and 70 micrometers were used as the light emitting device 110 .
- the change in the current value according to the voltage value in each light emitting device 110 it can be seen that the change in the current according to the voltage value is large in all three cases from 2.2 volts to 4 volts, which is in the range of 2.2 volts to 4 volts. This means that the brightness of the light emitting device 110 can be easily adjusted.
- FIG. 8 is a graph showing the required resistance range of the memristor 210 when a 30 micrometer-sized micro LED is used as the light-emitting device 110
- FIG. 9 is a 50-micrometer-sized micro LED as the light-emitting device 110. It is a graph showing the required resistance range of the memristor 210 when using
- FIG. 10 is a graph showing the required resistance range of the memristor 210 when using a 100 micrometer-sized micro LED as the light emitting device 110 . to be.
- the brightness of the light emitting device 110 is easily adjusted in the range of 2.2 volts to 4 volts, so that the memristor 210 is used. It can be seen that the voltage to be distributed is preferably 1 volt to 2.2 volts.
- the resistance of the memristor 210 is 0.5 to 150 kiloohms, and the light emitting device 110 is 50
- the resistance of the memristor 210 is 0.5 to 4 kiloohms
- the resistance of the memristor 210 is 0.5 to 500 kiloohms. It may be desirable to provide in Ohms.
- step 6 the high potential voltage 41 applied through the high potential voltage supply line 40 is removed (step 6).
- a scan voltage 21 capable of turning on the switch thin film transistor 310 is applied to the gate terminal of the switch thin film transistor 310 through the gate line 20 (step 7).
- a reset voltage which is a voltage capable of changing the state of the memristor 210 to a high resistance state, is applied to the data line 30 (step 8).
- the voltage value of the reset voltage applied to the memristors 210 may be set to different values for each memristor 210 .
- the reset voltage value in step 8 of the present invention must exceed the difference between the high potential voltage 41 and the driving voltage of the light emitting device 110 . This is to prevent the memristor 210 from being unintentionally reset by the voltage distributed to the memristor 210 .
- the memristor 210 when the high potential voltage 41 is 5 volts and the driving voltage of the light emitting device 110 is 2.8 volts to 4 volts, a voltage of a minimum of 1 volt and a maximum of 2.2 volts is distributed to the memristor 210 . , if the reset voltage is less than 2.2 volts, the memristor 210 may be unintentionally reset by the voltage applied to the memristor 210 . Accordingly, the reset voltage of the memristor 210 must exceed the difference between the high potential voltage 41 and the driving voltage of the light emitting device 110 .
- the reset voltage should be set to be less than the set voltage in step 3 .
- the state of the memristor 210 is changed to a high resistance state again.
- the driving thin film transistor 220 and the storage capacitor 230 are replaced with the memristor 210 through the processes of steps 1 to 9, the light emitting device 110 can be operated for one frame.
- step 9 since the memristor 210 can operate even in tens of nanoseconds (sec), when considering tens of milliseconds (sec), which is the operation speed of a general display having a scan rate of 60 Hz per second, additional steps 7 to It will be apparent that the problem with step 9 does not occur.
- FIG. 11 is a flowchart illustrating a display driving method (S10a) according to the first embodiment of the present invention.
- the display driving method S10a includes steps S100a to S800a.
- Step S100a refers to a step of applying the high potential voltage 41 to the high potential voltage supply line 40 , and may correspond to step 1 of the present invention.
- Step S200a refers to a step of applying the scan voltage 21 , which is a voltage for turning on the switching unit 300 to the gate line 20 , and may correspond to step 2 of the present invention.
- Step S300a refers to a step of applying a set voltage, which is a voltage for changing the state of the driver 200 from a high resistance state to a low resistance state, to the data line 30 , and may correspond to step 3 of the present invention.
- a set voltage which is a voltage for changing the state of the driver 200 from a high resistance state to a low resistance state
- Step S400a refers to a step of turning off the switching unit 300 by removing the scan voltage applied to the gate line 20 , and may correspond to step 4 of the present invention.
- Step S500a refers to a step of removing the high potential voltage 41 applied to the high potential voltage supply line 40, and may correspond to steps 5 and 6 of the present invention.
- Step S600a refers to a step of applying the scan voltage 21 , which is a voltage for turning on the switching unit 300 to the gate line 20 , and may correspond to step 7 of the present invention.
- Step S700a refers to a step of applying a reset voltage, which is a voltage for changing the state of the driver 200 from a low resistance state to a high resistance state, to the data line 30 , and may correspond to step 8 of the present invention.
- a reset voltage which is a voltage for changing the state of the driver 200 from a low resistance state to a high resistance state
- Step S800a refers to a step of removing the scan voltage applied to the gate line 20 and the reset voltage applied to the data line 30 , and may correspond to step 9 of the present invention.
- FIG. 12 is a view showing a display driving apparatus 10b according to a second embodiment of the present invention through a light emitting unit 100, a driving unit 200, a first switching unit 300a, and a second switching unit 300b.
- FIG. 13 is a view showing in more detail the display driving apparatus 10b according to the second embodiment of the present invention.
- the display driving apparatus 10b may include a plurality of gate lines, a plurality of data lines, and a plurality of switching units, for example, a first gate It may include a line 20a, a second gate line 20b, a first data line 30a, a second data line 30b, a first switching unit 300a, and a second switching unit 300b.
- both the set voltage and the reset voltage are applied through one data line.
- a data line (first data line, 30a) to which a set voltage is applied and a data line (second data line, 30b) to which a reset voltage is applied can be applied separately.
- a gate terminal of the first switch thin film transistor 310a included in the first switching unit 300a may be connected to the first gate line 20a, and a drain terminal may be connected to the first node 11 . and the source terminal may be connected to the first data line 30a.
- the gate terminal of the second switch thin film transistor 310b included in the second switching unit 300b may be connected to the second gate line 20b, and the drain terminal may be connected to the first node 11, The source terminal may be connected to the second data line 30b.
- FIG. 14 is a diagram illustrating an operation process of the display driving apparatus 10b according to the second embodiment of the present invention for each step.
- the display driving apparatus 10b operates through steps 1 to 9 .
- the high potential voltage 41 is applied through the high potential voltage supply line 40 (step 1).
- the memristor 210 may be in a high resistance state.
- a scan voltage 21 capable of turning on the first switch thin film transistor 310a is applied to the gate terminal of the first switch thin film transistor 310a through the first gate line 20a. (Step 2).
- a set voltage which is a voltage capable of changing the state of the memristor 210 to a low resistance state, is applied to the first data line 30a (step 3).
- step 4 the scan voltage 21 applied to the gate terminal of the first switch thin film transistor 310a is removed to turn off the first switch thin film transistor 310a (step 4). At this time, the current generated by the high potential voltage 41 flows along the light emitting device 110 and the memristor 210 .
- the current flows along the light emitting device 110 and the memristor 210 for one frame (step 5) .
- the amount of charge stored in the memristor 210 may be an amount of charge that allows current to flow through the light emitting device 110 and the memristor 210 for one frame.
- a scan voltage 21 capable of turning on the second switch thin film transistor 310b is applied to the gate terminal of the second switch thin film transistor 310b through the second gate line 20b (step 7).
- a reset voltage which is a voltage capable of changing the state of the memristor 210 to a high resistance state, is applied to the second data line 30b (step 8).
- 15 is a flowchart illustrating a display driving method S10b according to the second embodiment of the present invention.
- the display driving method S10b according to the second embodiment of the present invention includes steps S100b to S800b.
- Step S100b refers to a step of applying the high potential voltage 41 to the high potential voltage supply line 40 , and may correspond to step 1 of the present invention.
- Step S200b refers to a step of applying the scan voltage 21, which is a voltage for turning on the first switching unit 300a, to the first gate line 20a, and may correspond to step 2 of the present invention.
- Step S300b refers to a step of applying a set voltage, which is a voltage for changing the state of the driver 200 from a high resistance state to a low resistance state, to the first data line 30a, and may correspond to step 3 of the present invention.
- a set voltage which is a voltage for changing the state of the driver 200 from a high resistance state to a low resistance state
- Step S400b refers to a step of turning off the first switching unit 300a by removing the scan voltage applied to the first gate line 20a, and may correspond to step 4 of the present invention.
- Step S500b refers to a step of removing the high potential voltage 41 applied to the high potential voltage supply line 40, and may correspond to steps 5 and 6 of the present invention.
- Step S600b refers to a step of applying the scan voltage 21, which is a voltage for turning on the second switching unit 300b, to the second gate line 20b, and may correspond to step 7 of the present invention.
- Step S700b refers to a step of applying a reset voltage, which is a voltage for changing the state of the driver 200 from a low resistance state to a high resistance state, to the second data line 30b, and may correspond to step 8 of the present invention.
- a reset voltage which is a voltage for changing the state of the driver 200 from a low resistance state to a high resistance state
- Step S800b refers to a step of removing the scan voltage applied to the second gate line 20b and the reset voltage applied to the second data line 30b, and may correspond to step 9 of the present invention.
- the display driving apparatuses 10a and 10b according to the first and second embodiments of the present invention and the display driving methods S10a and S10b according to the first and second embodiments of the present invention utilize a memristor element, It is possible to provide an active display driving circuit capable of minimizing the volume and simplifying the structure.
- micro light emitting device having an omnidirectional reflector structure and a manufacturing method thereof according to an embodiment of the present invention have been described above as specific embodiments, but this is merely an example, and the present invention is not limited thereto, and the basic idea disclosed in the present specification is not limited thereto. should be construed as having the widest scope to follow.
- a person skilled in the art may implement a pattern of a shape not specified by combining or substituting the disclosed embodiments, but this also does not depart from the scope of the present invention.
- those skilled in the art can easily change or modify the disclosed embodiments based on the present specification, and it is clear that such changes or modifications also fall within the scope of the present invention.
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Abstract
Description
Claims (14)
- 발광 소자를 포함하도록 구성되는 발광부;멤리스터를 포함하며, 상기 발광부를 구동시키도록 구성되는 구동부; 및스위칭 박막 트랜지스터를 포함하며, 스캔 전압에 따라 데이터 전압을 상기 구동부로 인가할지 여부를 결정하도록 구성되는 스위칭부를 포함하는, 디스플레이 구동 장치.
- 제1항에 있어서,상기 구동부는:상기 발광부 및 상기 스위칭부로 분기되는 제1 노드에 연결되도록 구성되는, 디스플레이 구동 장치.
- 제2항에 있어서,상기 스위칭부는:상기 제1 노드;스캔 전압을 입력 받기 위한 상기 게이트 라인; 및데이터 전압을 입력 받기 위한 데이터 라인에 연결되도록 구성되는, 디스플레이 구동 장치.
- 제3항에 있어서,상기 스위칭부는:상기 게이트 라인으로부터 상기 스캔 전압이 입력되는 경우, 상기 데이터 라인으로부터 입력된 상기 데이터 전압을 상기 제1 노드에 인가하도록 구성되는, 디스플레이 구동 장치.
- 제3항에 있어서,상기 발광부는:상기 제1 노드 및;고전위 전압을 입력 받기 위한 고전위 전압 공급라인에 연결되도록 구성되는, 디스플레이 구동 장치.
- 제5항에 있어서,상기 멤리스터를 고저항 상태에서 저저항 상태로 상태변환 시키기 위한 전압인 셋 전압; 및상기 멤리스터를 저저항 상태에서 고저항 상태로 상태변환 시키기 위한 전압인 리셋 전압 중 어느 하나에 해당하는, 디스플레이 구동 장치.
- 제6항에 있어서,상기 구동부는:상기 제1 노드에 상기 셋 전압이 인가되는 경우, 상기 발광부는 구동 시키지 않되 상기 멤리스터는 저저항 상태로 상태변환하고;상기 제1 노드에 상기 데이터 전압이 인가되지 않는 경우, 상기 발광부를 구동시키고;상기 제1 노드에 상기 리셋 전압이 인가되는 경우, 상기 발광부는 구동 시키지 않되 상기 멤리스터는 고저항 상태로 상태변환하도록 구성되는, 디스플레이 구동 장치.
- 제6항에 있어서,상기 셋 전압은:상기 고전위 전압과 상기 발광 소자의 구동 전압 간의 차이를 초과하고;상기 고전위 전압 미만인, 디스플레이 구동 장치.
- 제8항에 있어서,상기 리셋 전압은:상기 고전위 전압과 상기 발광 소자의 구동 전압 간의 차를 초과하고;상기 셋 전압 미만인, 디스플레이 구동 장치.
- 제3항에 있어서,상기 스위칭부는 제1 스위칭부 및 제2 스위칭부를 포함하고,상기 게이트 라인은 상기 제1 스위칭부 동작을 위한 스캔 전압이 인가되는 제1 게이트 라인 및 상기 제2 스위칭부 동작을 위한 스캔 전압이 인가되는 제2 게이트 라인을 포함하고,상기 데이터 라인은 셋 전압이 인가되는 제1 데이터 라인 및 리셋 전압이 인가되는 제2 데이터 라인을 포함하는, 디스플레이 구동 장치.
- 제10항에 있어서,상기 제1 스위칭부는:상기 제1 노드;상기 제1 게이트 라인; 및상기 제1 데이터 라인에 연결되도록 구성되는, 디스플레이 구동 장치.
- 제11항에 있어서,상기 제2 스위칭부는:상기 제1 노드;상기 제2 게이트 라인; 및상기 제2 데이터 라인에 연결되도록 구성되는, 디스플레이 구동 장치.
- 제1항에 따른 디스플레이 구동 장치에 의해 수행되는 디스플레이 구동 방법에 있어서,(a) 고전위 전압 공급라인에 고전위 전압을 인가하는 단계;(b) 게이트 라인에 스위칭부를 턴온 시키기 위한 전압인 스캔 전압을 인가하는 단계;(c) 데이터 라인에 구동부를 고저항 상태에서 저저항 상태로 상태 변환시키기 위한 전압인 셋 전압을 인가하는 단계;(d) 상기 게이트 라인에 인가되었던 스캔 전압을 제거하여 상기 스위칭부를 턴오프 시키는 단계;(e) 상기 고전위 전압 공급라인에 인가되었던 고전위 전압을 제거하는 단계;(f) 상기 게이트 라인에 스위칭부를 턴온 시키기 위한 전압인 스캔 전압을 인가하는 단계;(g) 상기 데이터 라인에 상기 구동부를 저저항 상태에서 고저항 상태로 상태 변환시키기 위한 전압인 리셋 전압을 인가하는 단계; 및(h) 상기 게이트 라인에 인가되었던 스캔 전압과 상기 데이터 라인에 인가되었던 리셋 전압을 제거하는 단계를 포함하는, 디스플레이 구동 방법.
- 제10항에 따른 디스플레이 구동 장치에 의해 수행되는 디스플레이 구동 방법에 있어서,(a) 고전위 전압 공급라인에 고전위 전압을 인가하는 단계;(b) 제1 게이트 라인에 제1 스위칭부를 턴온 시키기 위한 전압인 스캔 전압을 인가하는 단계;(c) 제1 데이터 라인에 구동부를 고저항 상태에서 저저항 상태로 상태 변환시키기 위한 전압인 셋 전압을 인가하는 단계;(d) 제1 게이트 라인에 인가되었던 스캔 전압을 제거하여 제1 스위칭부를 턴오프 시키는 단계;(e) 고전위 전압 공급라인에 인가되었던 고전위 전압을 제거하는 단계;(f) 제2 게이트 라인에 제2 스위칭부를 턴온 시키기 위한 전압인 스캔 전압을 인가하는 단계;(g) 제2 데이터 라인에 구동부를 저저항 상태에서 고저항 상태로 상태 변환시키기 위한 전압인 리셋 전압을 인가하는 단계; 및(h) 제2 게이트 라인에 인가되었던 스캔 전압과 제2 데이터 라인에 인가되었던 리셋 전압을 제거하는 단계를 포함하는, 디스플레이 구동 방법.
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EP21931818.5A EP4310823A1 (en) | 2021-03-19 | 2021-08-30 | Display device and method for controlling light-emitting element by using memristor |
CN202180095468.1A CN116964659A (zh) | 2021-03-19 | 2021-08-30 | 使用忆阻器控制发光元件的显示装置和方法 |
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KR20110113333A (ko) * | 2010-04-09 | 2011-10-17 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치 및 그 구동방법 |
KR20120070773A (ko) * | 2010-12-22 | 2012-07-02 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치 및 그 구동방법 |
KR20150001424A (ko) * | 2013-06-27 | 2015-01-06 | 엘지디스플레이 주식회사 | 고전압 구동용 액정표시장치 |
KR20150109710A (ko) * | 2014-03-20 | 2015-10-02 | 제주대학교 산학협력단 | 멤리스터 구동 장치 |
KR20150111674A (ko) * | 2014-03-26 | 2015-10-06 | 제주대학교 산학협력단 | 멤리스터 기반 소자 |
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- 2021-03-19 KR KR1020210035671A patent/KR102549338B1/ko active IP Right Grant
- 2021-08-30 US US18/279,932 patent/US20240161683A1/en active Pending
- 2021-08-30 WO PCT/KR2021/011589 patent/WO2022196875A1/ko active Application Filing
- 2021-08-30 EP EP21931818.5A patent/EP4310823A1/en active Pending
- 2021-08-30 CN CN202180095468.1A patent/CN116964659A/zh active Pending
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KR20110113333A (ko) * | 2010-04-09 | 2011-10-17 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치 및 그 구동방법 |
KR20120070773A (ko) * | 2010-12-22 | 2012-07-02 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치 및 그 구동방법 |
KR20150001424A (ko) * | 2013-06-27 | 2015-01-06 | 엘지디스플레이 주식회사 | 고전압 구동용 액정표시장치 |
KR20150109710A (ko) * | 2014-03-20 | 2015-10-02 | 제주대학교 산학협력단 | 멤리스터 구동 장치 |
KR20150111674A (ko) * | 2014-03-26 | 2015-10-06 | 제주대학교 산학협력단 | 멤리스터 기반 소자 |
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US20240161683A1 (en) | 2024-05-16 |
CN116964659A (zh) | 2023-10-27 |
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