WO2022193756A1 - 激光器、光源模组及激光雷达 - Google Patents

激光器、光源模组及激光雷达 Download PDF

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WO2022193756A1
WO2022193756A1 PCT/CN2021/138310 CN2021138310W WO2022193756A1 WO 2022193756 A1 WO2022193756 A1 WO 2022193756A1 CN 2021138310 W CN2021138310 W CN 2021138310W WO 2022193756 A1 WO2022193756 A1 WO 2022193756A1
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light
laser
emitting
driving
electrode
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PCT/CN2021/138310
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English (en)
French (fr)
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费嘉瑞
俞辰韧
刘建峰
向少卿
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上海禾赛科技有限公司
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Publication of WO2022193756A1 publication Critical patent/WO2022193756A1/zh
Priority to US18/466,863 priority Critical patent/US20240006852A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42Arrays of surface emitting lasers
    • H01S5/423Arrays of surface emitting lasers having a vertical cavity
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • H01S5/02345Wire-bonding
    • HELECTRICITY
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    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363Structure of the reflectors, e.g. hybrid mirrors comprising air layers
    • H01S5/18366Membrane DBR, i.e. a movable DBR on top of the VCSEL
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06Systems determining position data of a target
    • G01S17/08Systems determining position data of a target for measuring distance only
    • G01S17/10Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88Lidar systems specially adapted for specific applications
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481Constructional features, e.g. arrangements of optical elements
    • G01S7/4814Constructional features, e.g. arrangements of optical elements of transmitters alone
    • G01S7/4815Constructional features, e.g. arrangements of optical elements of transmitters alone using multiple transmitters
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    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08Construction or shape of optical resonators or components thereof
    • H01S3/08059Constructional details of the reflector, e.g. shape
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    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0425Electrodes, e.g. characterised by the structure
    • H01S5/04256Electrodes, e.g. characterised by the structure characterised by the configuration
    • HELECTRICITY
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    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361Structure of the reflectors, e.g. hybrid mirrors
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    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
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    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/0206Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207Substrates having a special shape
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    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02355Fixing laser chips on mounts
    • H01S5/0237Fixing laser chips on mounts by soldering
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    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
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    • H01S5/04254Electrodes, e.g. characterised by the structure characterised by the shape
    • HELECTRICITY
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    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0425Electrodes, e.g. characterised by the structure
    • H01S5/04256Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
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    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226Modulation at ultra-high frequencies
    • HELECTRICITY
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    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
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    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388Lenses
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    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/34Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Definitions

  • the invention relates to the field of laser detection, in particular to a laser, a light source module and a laser radar.
  • Lidar undertakes important tasks such as road edge detection, obstacle recognition, and real-time localization and mapping (SLAM) in autonomous driving.
  • SLAM real-time localization and mapping
  • the LIDAR system includes a laser emitting system and a light receiving system.
  • the laser emission system includes a light emission unit, which generates emission light pulses, the emission light pulses are incident on the target and are reflected to generate echo beams, and finally the echo beams are received by the light receiving system.
  • the receiving system accurately measures the travel time of an incident light pulse from when it is emitted to when it is reflected back. Because light pulses travel at the speed of light, and the speed of light is known, the travel time can be converted into a measure of distance.
  • Lidar can accurately measure target position (distance and angle), motion state (speed, vibration and attitude) and shape, and detect, identify, distinguish and track targets. Due to the advantages of fast measurement speed, high accuracy and long distance measurement, lidar has been widely used in unmanned vehicles.
  • the light emitting unit of the prior art lidar has the problem of uneven luminous intensity.
  • the problem solved by the present invention is to provide a laser, a light source module and a laser radar to improve the uniformity of the luminous intensity.
  • the technical solution of the present invention provides a laser, comprising: a light-emitting stack, including a first reflecting mirror, an active area, and a second reflecting mirror arranged in sequence along the light-emitting direction; the light-emitting stack includes one or more light-emitting units, each Each of the light-emitting units includes a plurality of regularly arranged light-emitting points; electrode units are located on the side of the first reflector away from the active area, each electrode unit corresponds to one of the light-emitting units, and is used for A driving signal is loaded to the light emitting unit.
  • the electrode unit includes two driving terminals for loading driving signals to the light-emitting unit; the driving terminals are arranged at both ends of the extending direction of the electrode unit, and each driving terminal is provided with a pad, so The pad is used for loading the driving signal.
  • the laser further includes: an insulating layer located on a side of the first mirror away from the active region, the insulating layer covering the electrode units and isolating adjacent electrode units.
  • the electrode unit includes a plurality of driving terminals for loading driving signals to the light-emitting unit; each driving terminal is provided with a solder ball, and the insulating layer is provided with an opening at a position corresponding to the solder ball, The solder balls protrude from the surface of the insulating layer through the openings, and the solder balls are used for loading driving signals.
  • solder balls are uniformly arranged along the extending direction of the electrode unit.
  • the solder balls of adjacent electrode units are staggered along the extending direction of the electrode units.
  • the light-emitting stack further includes a substrate, the substrate is located on the side of the second mirror away from the active area; the light-emitting point includes: a first contact electrode, located on the first mirror away from the active area the surface of the substrate; the second contact electrode is located on the surface of the substrate away from the active region.
  • the second contact electrode is formed with a light exit hole.
  • the light-emitting point includes: a first contact electrode, located on a surface of the first reflector facing away from the active area; a second contact electrode, located on a surface of the second reflector facing the active area.
  • a plurality of first contact electrodes of the same light-emitting unit are connected to the corresponding electrode units; and the second contact electrodes of each light-emitting point in the laser are connected.
  • the light-emitting stack has a microlens structure on the light-emitting surface.
  • the laser is a vertical cavity surface emitting laser
  • the first reflection mirror and the second reflection mirror are distributed Bragg mirrors.
  • the laser is a backside emitting laser.
  • an embodiment of the present invention also provides a light source module, including a laser and a driving board, where the laser is the laser provided by the embodiment of the present invention; the driving board includes: a driving circuit for providing driving a signal; and a first pad for electrically connecting with the electrode unit to provide a driving signal to the electrode unit.
  • the driving board further includes: a second pad for providing signals with different electrical properties to the laser.
  • the second pad is an annular pad surrounding the electrode unit.
  • an embodiment of the present invention further provides a laser radar, including a transmitting module and a receiving module, the transmitting module includes the light source module provided in the embodiment of the present invention, and is suitable for emitting a detection beam; the The receiving module includes one or more photodetectors, which are adapted to receive the echo beams reflected by the target object and convert them into electrical signals.
  • the electrode unit is located on the side of the first reflector away from the active area, that is, the electrode unit is not located in the light-emitting direction, so that the light-emitting surface and the electrode unit are located on different surfaces of the laser, so that The electrode unit does not need to be provided with an opening for light exit, so the electrode unit has a large effective width, thereby reducing parasitic parameters such as parasitic resistance and parasitic inductance, thereby improving the transmission capability of the driving signal and increasing the luminous intensity of the laser. uniformity.
  • 1 is a top view of a laser of the disclosed technology
  • Fig. 2 is the circuit diagram of the light-emitting unit in the laser of Fig. 1;
  • Fig. 3 is the luminance distribution diagram of a plurality of light-emitting points along the OO' line in the light-emitting unit in Fig. 1;
  • Figure 5 is a top view of the laser of Figure 4.
  • FIG. 6 is a schematic side view of the laser according to the first embodiment of the present invention.
  • Fig. 7 is the top view of the array arrangement of the laser shown in Fig. 6;
  • Fig. 8 is the side view of the laser of the second embodiment of the present invention.
  • Figure 9 is a top view of the laser shown in Figure 8.
  • Fig. 10 is the side view of the laser of the third embodiment of the present invention.
  • FIG. 11 is a top view of the laser shown in FIG. 10 .
  • the light emitting unit in the disclosed technology has a problem of uneven luminous intensity.
  • the reasons for the problem are analyzed below.
  • FIG. 1 and FIG. 2 in combination, a top view of a laser and a circuit diagram of a light-emitting unit in the disclosed technology are respectively shown.
  • the laser is a surface-array laser, including a plurality of light-emitting points 20 arranged in an array, so that the light emitted by the surface-array laser can cover a larger field of view, thereby improving the detection efficiency of the lidar.
  • the disclosed technology usually adopts a column addressing structure, and each column of light-emitting points 20 is driven to emit light independently, so that the multiple light-emitting points 20 located in the same column are
  • the light-emitting points 20 constitute a light-emitting unit 10, and the light-emitting unit 10 has a long-striped structure extending along the column direction.
  • the laser is connected with a drive circuit 12 to provide drive signals to each light-emitting unit 10 .
  • the light-emitting points 20 located in the same light-emitting unit 10 are connected in parallel and can be driven to emit light simultaneously when the drive circuit 12 provides drive signals.
  • the driving circuit 12 loads a driving signal to the light-emitting unit 10 through the pads 11 located at the end of the column, because the interconnection metal layer shared by multiple light-emitting points in the light-emitting unit 10 is a long strip with a large length and a small width. specialty.
  • the drive circuit 12 applies a high current and high frequency drive signal to the metal layer through the long strip interconnecting pads at the ends of the metal layer.
  • the laser is a VCSEL top-emitting surface array laser, including: a substrate 31 and a light-emitting stack on the substrate 31 (including a first reflector 37, an active region 38 and a second reflector 39 arranged in sequence along the light-emitting direction). ), the backside of the substrate 31 is covered with a cathode contact metal 30, an anode contact metal 36 is formed on the light emitting stack, and an interconnection metal layer 34 on the anode contact metal 36, the interconnection metal layer 34 There are openings 35 formed therein for the light emitted from the light emitting stack to be emitted.
  • the top view of the interconnect metal layer 34 is shown. Since the interconnection metal layer 34 is formed with the opening 35, the interconnection metal layer 34 is used to further reduce the effective width of the current passing through, thereby further increasing the parasitic parameters such as resistance and parasitic inductance, which in turn leads to high frequency driving The transmission capability of the signal from the pad 40 to the far end is reduced, which makes the problem of uneven laser luminous intensity more serious.
  • an embodiment of the present invention provides a laser, including: a light-emitting stack, including a first reflector, an active region, and a second reflector arranged in sequence along the light-emitting direction; the light-emitting stack includes one or more a plurality of light-emitting units, each of which includes a plurality of light-emitting points arranged regularly; an electrode unit, located on the side of the first reflector away from the active area, each electrode unit is associated with one of the light-emitting points The corresponding unit is used for loading a driving signal to the light-emitting unit through the driving terminal.
  • the electrode unit is located on the side of the first reflector away from the active area, that is, the electrode unit is not located in the light-emitting direction, so that the light-emitting surface and the electrode unit are located on different surfaces of the laser, so that The electrode unit does not need to be provided with an opening for light exit, so the electrode unit has a large effective width, thereby reducing parasitic parameters such as parasitic resistance and parasitic inductance, thereby improving the transmission capability of the driving signal and increasing the luminous intensity of the laser. uniformity.
  • the laser in this embodiment is a surface array laser. More specifically, a vertical-cavity surface-emitting laser (Vertical-Cavity Surface-Emitting Laser, VCSEL) is used as an example for description.
  • VCSEL Vertical-cavity Surface-Emitting Laser
  • the laser includes:
  • the substrate 100 is used to provide a process operating platform.
  • the substrate 100 can also serve as a formation basis for a microlens, so the material of the substrate 100 can also be a material suitable for process requirements or easy to integrate.
  • the material of the substrate 100 is gallium arsenide. In other embodiments, the material of the substrate may also be other III/V compounds such as gallium nitride and silicon.
  • the substrate 100 is N-type doped gallium arsenide.
  • the light-emitting stack includes: a first reflecting mirror 105, an active region 104 and a second reflecting mirror 102 arranged in sequence along the light-emitting direction.
  • the light exit direction is the direction from top to bottom in the figure (the direction shown by the arrow in the figure), therefore, the second reflector 102 , the active region 104 and the The first mirror 105 .
  • the active region 104 is used for radiating photons, and the first mirror 105 and the second mirror 102 form a resonant cavity, which is used to make the radiated photons form coherent oscillation, and provide a strong enough injection current so that the photons can overcome the device's own
  • the various losses form a lasing, after which the laser is emitted from a reflector serving as an exit mirror.
  • the emitted light of a VCSEL is located in the near-infrared band.
  • the second reflector 102 is a distributed Bragg reflector (Distributed Bragg Reflector, DBR).
  • the distributed Bragg reflector is a multi-layer structure composed of two optical films with different refractive indices arranged alternately. Fresnel reflection occurs at each interface of the two optical films.
  • the optical path difference of the reflected light at the two adjacent interfaces is half a wavelength.
  • the reflection at the interface will also cause an optical path difference of half a wavelength. Therefore, the light of the working wavelength is coherently enhanced in all reflections at the interface.
  • the reflectivity of the two DBRs is different.
  • the reflectivity of the DBR on one side is close to 100%, which can be used as the total reflection mirror of the resonator, while the reflectivity of the DBR on the other side is relatively low, which can be used as the output of the resonator. mirror.
  • the light exit direction of the laser is from top to bottom, so the second reflecting mirror 102 is an exit mirror, and an N-type DBR is used.
  • the distributed Bragg mirrors are alternately formed of two optical films with different refractive indices, such as Al x Ga 1-x As/Al 1-y Ga y As, where x and y can have different values.
  • the optical path of each optical film is ⁇ /4, where ⁇ is the working wavelength of the laser.
  • the active region 104 through the multiple quantum well structure, establishes the basis for realizing the inversion distribution of internal carriers to radiate photons.
  • the active region 104 includes gallium indium arsenide (GaInAs)/gallium arsenide (GaAs) quantum hydrazine.
  • GaInAs gallium indium arsenide
  • GaAs gallium arsenide
  • GaAs gallium arsenide
  • the first reflecting mirror 105 is used to cooperate with the second reflecting mirror 102 to form a resonant cavity.
  • the first reflection mirror 105 is a total reflection mirror.
  • the first mirror 105 is also a distributed Bragg mirror, which is alternately formed by two optical films with different refractive indices, such as Al x Ga 1-x As/Al 1-y Ga y As, where x and The value of y can be different.
  • the optical path of each optical film is ⁇ /4, where ⁇ is the working wavelength of the laser.
  • the first reflecting mirror 105 and the second reflecting mirror 102 may also be formed of other dielectric materials. Specifically, it is formed by stacking a high-refractive index material and a low-refractive index material.
  • a high-refractive index material tantalum pentaoxide, hafnium oxide, titanium dioxide, and the like can be used.
  • a low-refractive index material magnesium fluoride, silicon dioxide, and the like can be used.
  • the resistance of the first reflecting mirror 105 and the second reflecting mirror 102 is reduced by doping.
  • the doping types of the first reflecting mirror 105 and the second reflecting mirror 102 are different, wherein the doping type of the second reflecting mirror 102 and the substrate 100 are the same.
  • the first reflecting mirror 105 , the active region 104 and part of the second reflecting mirror 102 are separated into different regions by the spacer structure 106 , thereby forming different light emitting points 203 .
  • the VCSEL laser is a surface-array laser and includes a plurality of light-emitting points 203 .
  • a driving signal needs to be loaded into the active region 104 through the driving circuit to realize photon radiation, thereby forming the light-emitting point 203.
  • the light-emitting point 203 further includes:
  • the first contact electrode 108 is located on the surface of the first mirror 105 facing away from the active region 104 ; and the second contact electrode 101 is located on the surface of the substrate 100 facing away from the active region 104 .
  • the first contact electrode 108 is an anode contact metal layer, which is used for connecting the positive electrode of the driving circuit
  • the second contact electrode 101 is a cathode contact electrode, which is used for connecting the negative electrode of the driving circuit.
  • the laser emits light from the position of the substrate 100 , and a light-emitting hole is formed in the second contact electrode 101 .
  • the laser further includes electrode units 107 located on the side of the first reflecting mirror 105 away from the active area 104, each electrode unit 107 corresponds to one of the light-emitting units 200, and is used to transmit to the light-emitting unit. 200 Load the drive signal.
  • the light-emitting direction of the laser in the embodiment of the present invention is the direction from the active region 104 to the second reflecting mirror 102 (from top to bottom, as shown by the arrow in FIG. 6 ).
  • the electrode unit 107 is located at the first reflecting mirror 105 away from the one side of the source region 104 . Therefore, the electrode unit 107 does not need to be provided with a light hole, thereby ensuring the integrity of the material of the electrode unit 107, reducing the inductance and parasitic capacitance of the electrode unit 107, so the electrode unit 107 has a larger effective width, thereby reducing parasitic
  • the parasitic parameters such as resistance and parasitic inductance can improve the transmission capability of the driving signal and improve the uniformity of the luminous intensity of the laser.
  • the electrode unit 107 is located above the first contact electrode 108 and is electrically connected to the first contact electrode 108 . Specifically, the electrode unit 107 is used to realize the electrical connection between the driving circuit and the light-emitting point, and transmit the driving signal of the external circuit to the first contact electrode 108 .
  • a contact layer 109 is further formed between the electrode unit 107 and the first contact electrode 108 for reducing the contact resistance between the electrode unit 107 and the first contact electrode 108 .
  • FIG. 7 is a top view of the array arrangement of the lasers shown in FIG. 6 .
  • the light-emitting points 203 illustrate the light-emitting positions formed by the electrodes 101 shown in FIG. 6 .
  • the light-emitting points 203 are arranged in a matrix array, and the light-emitting points 203 along the column direction constitute a light-emitting unit 200 .
  • the plurality of first contact electrodes 108 of the same light-emitting unit 200 are connected to the corresponding electrode units 107, which are correspondingly strip electrodes along the column direction.
  • the second contact electrodes 101 of the light-emitting points 203 of the laser are connected to each other.
  • the light-emitting points 203 may also be arranged in a honeycomb pattern.
  • the electrode unit 107 can be made of a non-light-transmitting material.
  • the electrode unit 107 is an interconnection metal layer.
  • the interconnection metal layer may be metal materials such as copper and aluminum.
  • the laser in the embodiment of the present invention includes a plurality of rows of strip electrodes, and insulation layers 120 are used to achieve insulation between adjacent strip electrodes.
  • the insulating layer 120 can be made of silicon oxide, silicon nitride, silicon oxynitride, or the like. These materials are insulating materials commonly used in semiconductor processes and have low dielectric constants, which can reduce parasitic capacitances.
  • the light emitting direction of the laser is the direction from the active region 104 to the second reflecting mirror 102 .
  • the light formed by the light-emitting stack exits through the substrate 100 , that is, the surface of the substrate 100 facing away from the second mirror 102 is the light-emitting surface, and the surface of the substrate 100 that realizes light-emitting is defined as the backside of the substrate.
  • a micro-lens structure 110 is also formed on the back of the substrate for condensing the light formed by the light-emitting stack.
  • a convex surface with a certain curvature is formed on the back surface of the substrate 100 corresponding to each light emitting point, and the convex surface constitutes the microlens structure 110 .
  • the second contact electrodes 101 are located on the backside of the substrate between the microlens structures 110 .
  • the second contact electrodes 101 of the light-emitting points of the laser are connected to each other.
  • the first contact electrode 101 is a metal layer located on the backside of the substrate, and the metal layer has a light exit hole formed at the position of the microlens structure.
  • the electrode unit 107 includes two driving terminals for loading driving signals to the light-emitting unit.
  • the drive terminal refers to the connection terminal where the electrode unit 107 is electrically connected to the drive circuit.
  • the driving ends are arranged at both ends of the electrode unit in the extending direction, so as to reduce the transmission distance of the driving signal.
  • the electrode unit 107 is a bar-shaped electrode, and two ends of the bar-shaped electrode are the driving ends 201 and 202 .
  • the two driving terminals 201 and 202 cooperate to load a driving signal to a light-emitting unit 200 at the same time, so that the light-emitting point 203 of the light-emitting unit 200 emits light.
  • each light-emitting unit 200 is connected to two driving ends 201 and 202, and the distance between the light-emitting point and the driving end is reduced, which can reduce the driving signal.
  • the transmission distance from the driving circuit to the light-emitting point 203 can reduce the problem of weakening the driving signal caused by parasitic capacitance and resistance, thereby improving the light uniformity of the laser.
  • each of the driving terminals 201 and 202 is provided with a pad, and the pad is used for connecting with the driving circuit to load the driving signal.
  • the driving terminal may also be electrically connected to the driving circuit by means of solder balls, wire bonding, or the like.
  • each electrode unit 107 may be provided with only one driving end.
  • the light output surface and the electrical connection are respectively arranged on different surfaces of the laser, so as to improve the uniformity of light output. sexual purpose.
  • a plurality of driving terminals (for example: 3 or more) are arranged on the electrode unit, and the driving signals are simultaneously loaded by the plurality of driving terminals, so that electric energy can be injected into the light-emitting unit through multiple positions, thereby further shortening the driving signal.
  • the transmission distance is further reduced, and the parasitic capacitance and resistance are further reduced to improve the problem of uneven light emission.
  • the laser further includes: an insulating layer 320 located on a side of the first mirror 305 away from the active region 304 , the insulating layer 320 covers the electrode units 307 and isolates adjacent electrode units 307 .
  • the insulating layer 320 is used to achieve insulation between adjacent electrode units 307 and also to achieve insulation between driving terminals.
  • the insulating layer 320 adopts a low dielectric constant dielectric material, so that parasitic capacitance can be reduced.
  • a low dielectric constant dielectric material for example, silicon oxide, silicon nitride, silicon oxynitride, and the like. These materials are commonly used dielectric materials in semiconductor processes, and thus have good process compatibility.
  • the electrode unit 307 includes a plurality of driving terminals for loading driving signals to the light-emitting unit 311 .
  • the driving terminal electrically connects the electrode unit 307 with the driving circuit through the conductive element.
  • the conductive elements are solder balls.
  • each driving end is provided with a solder ball 310
  • the insulating layer 320 is provided with an opening at a position corresponding to the solder ball 310 .
  • Solder balls 310 are filled in the openings and protrude from the surface of the insulating layer 320 , and the solder balls 310 are used for loading driving signals.
  • solder balls 310 are connected to the electrode units 307 exposed by the opening. Disposing a plurality of solder balls 310 in sequence along the column electrode unit 307 can further reduce the transmission distance of the driving signal from the driving circuit to the electrode unit 307 , thereby reducing parasitic resistance and capacitance.
  • the driving terminal can be arranged more flexibly in the column direction, and the number of the driving terminal can be increased, so that the parasitic resistance and capacitance can be further reduced.
  • the uniformity of light output is improved.
  • the arrangement of the plurality of driving terminals on the column electrode unit 307 is realized by means of solder balls.
  • the conductive element can also be implemented by arranging contact plugs in the insulating layer to electrically connect the electrode unit 307 with the driving circuit.
  • the solder balls 310 are evenly arranged along the extending direction of the electrode unit 307 , thereby ensuring that each driving end has a similar signal transmission distance and improving the uniformity of laser light output.
  • the electrode units 307 are strip electrodes along the column direction, and the solder balls 310 are uniformly arranged along the column direction.
  • the size of the solder balls 310 in the disclosed technology is relatively large.
  • the solder balls of the electrode units 307 are staggered along the extending direction of the electrode units 307 . In this way, the distance between adjacent solder balls of adjacent electrode units 307 can be increased, and the problem of short circuit between adjacent solder balls can be reduced.
  • the interconnect structure may also be arranged not staggered along the extending direction of the electrode unit 307 .
  • the laser includes a substrate, the substrate is a part of the light-emitting stack, and the substrate is located on the side of the second mirror away from the active region, that is, the laser It is a backside emitting laser.
  • the substrate may also be removed after the light emitting unit is formed on the substrate. That is, the laser may also not include a substrate.
  • the microlens structure when the laser does not include a substrate, the microlens structure may be provided on the light-emitting side of the laser.
  • the laser in the embodiment of the present invention is a back-emitting laser
  • the laser includes: a back surface serving as a light-emitting surface, and a front surface opposite to the back surface.
  • the light-emitting direction A is from the front to the back of the laser.
  • the first contact electrode 1 is an anode contact electrode, and is connected to the driving circuit through the electrode unit 3 .
  • the electrode unit 3 is located on the front side of the laser, and is the anode interconnection metal layer of the laser. As shown in FIG. 11 , the electrode unit 3 is a plurality of strip electrodes along the column direction and distributed in parallel in the light emitting area 602 of the laser.
  • the second contact electrode 2 is a cathode contact electrode and is located on the back of the laser.
  • the difference from the first embodiment is that in the embodiment of the present invention, the second contact electrode 2 is disposed on the second reflector, and is connected to the cathode interconnection metal layer through an interconnection structure perpendicular to the direction of the light-emitting stack. 4.
  • the cathode interconnection metal layer 4 is located on the front side of the laser, and is located in the peripheral region 601 around the light-emitting region 602 .
  • the anode interconnection metal layer and the cathode interconnection metal layer 4 are both located on the front side of the laser, forming a coplanar electrode.
  • the driving circuit can be connected to the anode interconnection metal layer and the cathode interconnection metal layer 4 by means of solder balls.
  • the first contact electrode 1 may be a cathode contact electrode
  • the second contact electrode 2 may be an anode contact electrode, which are respectively used for loading driving signals of different electrical properties in the driving circuit.
  • the first contact electrode and the second contact electrode are coplanar electrodes
  • the laser may include an N-type doped substrate or an undoped substrate, and the substrate is prepared as a micro- lens structure.
  • the laser may not contain a substrate. Specifically, after the light emitting stack is formed, the substrate is removed.
  • the second contact electrodes 2 of a plurality of light-emitting points in the laser are connected together, and the cathode interconnection metal layer 4 has a rectangular structure.
  • the cathode interconnection metal layer 4 here is a rectangle disposed on one side of the light-emitting region. In other embodiments, it may also be a ring-shaped, elliptical, or racetrack-shaped structure surrounding the light-emitting area.
  • the arrangement of the laser light-emitting points of the present invention is not limited to the matrix array arrangement shown in FIG. 7 , FIG. 9 or FIG.
  • the electrode unit is also not limited to the rectangle shown in FIG. 7 , FIG. 9 or FIG. 11 .
  • one light-emitting unit may be a plurality of light-emitting points regularly arranged along one extending direction; in addition, the shape of the electrode unit may be set according to the arrangement position of the light-emitting points, as shown in FIG. 5 Curved edge shape shown.
  • an embodiment of the present invention further provides a light source module including a laser and a driving board.
  • the laser is the laser of the embodiment of the present invention, and the technical details refer to the relevant description of the foregoing embodiment.
  • the driving board includes: a driving circuit for providing a driving signal; and a first pad for providing a driving signal to the electrode unit by being electrically connected to the electrode unit.
  • the outgoing light formed by the light source module of the present invention has high uniformity.
  • the driving board further includes: a second pad for providing signals with different electrical properties to the laser.
  • the driver board may be an integrated circuit (integrated circuit, IC) chip or a printed circuit board (printed circuit board, PCB).
  • the IC chip or the PCB board is provided with a first bonding pad and a second bonding pad with different electrical properties, which are respectively electrically connected with the interconnecting metals corresponding to the electrical properties of the laser through conductive elements.
  • the driving circuit includes a driving switch that controls the on-off of the driving signal. When the driving switch is turned on, the driving signal is injected into the laser to control the laser to emit light; when the driving switch is turned off, the laser stops emitting light.
  • the driving switch can be a MOS switch, such as PMOS or NMOS.
  • the driving switch may be a GaN switch.
  • an IC chip is used as a driving board, and a MOS switch tube is used to control the laser to emit light.
  • the MOS switch tube integrated on the IC chip usually has a structure with a large aspect ratio.
  • the extension direction of the MOS switch tube can be made consistent with the extension direction of the laser electrode unit.
  • the solder balls are respectively electrically connected along the extending direction of the MOS switch tube, so that the driving signal of the MOS switch tube is output from the plurality of driving ends, and the loss caused by the transmission of the driving signal in the extending direction of the MOS switch tube is reduced.
  • the present invention also provides a laser radar, including a transmitting module and a receiving module,
  • the transmitting module includes the light source module provided in the embodiment of the present invention, and is suitable for emitting a detection beam; the receiving module includes one or more photodetectors, which are suitable for receiving the return of the detection beam reflected by the target object. wave beams and converted into electrical signals.
  • the light source module provides uniform outgoing light, which can improve the detection accuracy of the laser radar.

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Abstract

一种激光器、光源模组及激光雷达,激光器包括:发光叠层,包括沿出光方向依次设置的第一反射镜(105)、有源区(104)、第二反射镜(102);发光叠层包括一个或多个发光单元(200),每个发光单元(200)包括多个规则排布的发光点(203);电极单元(107),位于第一反射镜(105)背离有源区(104)的一侧,每个电极单元(107)与一个发光单元(200)相对应,用于向发光单元(200)加载驱动信号。激光器能够提高发光强度的均匀性。

Description

激光器、光源模组及激光雷达 技术领域
本发明涉及激光探测领域,尤其涉及一种激光器、光源模组及激光雷达。
背景技术
激光雷达(LIDAR)在自动驾驶中承担了路沿检测、障碍物识别以及实时定位与绘图(SLAM)等重要任务。
具体地,LIDAR系统包括激光发射系统和光接收系统。激光发射系统包括光发射单元,产生发射光脉冲,所述发射光脉冲入射到目标物上反射并产生回波光束,最终所述回波光束被光接收系统所接收。接收系统准确地测量入射光脉冲从发射到被反射回的传播时间。因为光脉冲以光速传播,且光速是已知的,传播时间即可被转换为对距离的测量。
激光雷达能精确测量目标位置(距离和角度)、运动状态(速度、振动和姿态)和形状,探测、识别、分辨和跟踪目标。由于具有测量速度快、精度高和测距远等优点,激光雷达在无人车上得到了广泛应用。
现有技术激光雷达的光发射单元存在发光强度不均的问题。
发明内容
本发明解决的问题是提供一种激光器、光源模组及激光雷达,以提高发光强度的均匀性。
本发明技术方案提供一种激光器,包括:发光叠层,包括沿出光方向依次设置的第一反射镜、有源区、第二反射镜;所述发光叠层包括一个或多个发光单元,每个所述发光单元包括多个规则排布的发光点;电极单元,位于所述第一反射镜背离所述有源区的一侧,每个电极单元与一个所述发光单元相对应,用于向所述发光单元加载驱动信号。
可选地,所述电极单元包括两个驱动端,用于向发光单元加载驱动信号;所述驱动端设置于所述电极单元延伸方向的两端,每个驱动端设有一个焊盘,所述焊盘用于加载所述驱动信号。
可选地,所述激光器还包括:绝缘层,位于第一反射镜远离所述有源区的一侧,所述绝缘层覆盖电极单元并隔离相邻的电极单元。
可选地,所述电极单元包括多个驱动端,用于向发光单元加载驱动信号;每个驱动端设有一个焊球,所述绝缘层与所述焊球对应的位置设有开孔,所述焊球通过开孔凸出于绝缘层表面,所述焊球用于加载驱动信号。
可选地,所述焊球沿电极单元延伸方向均匀排列。
可选地,相邻所述电极单元的焊球沿所述电极单元的延伸方向交错排列。
可选地,所述发光叠层还包括衬底,所述衬底位于第二反射镜背离有源区的一面;所述发光点包括:第一接触电极,位于第一反射镜背离有源区的面上;第二接触电极,位于衬底背离有源区的面上。
可选地,所述第二接触电极形成有出光孔。
可选地,所述发光点包括:第一接触电极,位于第一反射镜背离有源区的面上;第二接触电极,位于第二反射镜朝向有源区的面上。
可选地,同一发光单元的多个第一接触电极连接至对应的所述电极单元;激光器中各发光点的第二接触电极相连。
可选地,所述发光叠层在出光面上具有微透镜结构。
可选地,所述激光器为垂直腔面发射激光器,所述第一反射镜和第二反射镜为分布式布拉格反射镜。
可选地,所述激光器为背面发光激光器。
为了解决所述技术问题,本发明实施例还提供一种光源模组,包括激光器和驱动板,所述激光器为本发明实施例提供的激光器;所述驱动板包括:驱动电路,用于提供驱动信号;以及第一焊垫,用于与所述电极单元电连接向所述电极单元提供驱动信号。
可选地,所述驱动板还包括:第二焊垫,用于向激光器提供不同电性的信号。
可选地,所述第二焊垫为围绕电极单元的环形焊垫。
为了解决所述技术问题,本发明实施例还提供一种激光雷达,包括发射模块和接收模块,所述发射模块包括本发明实施例提供的所述光源模组,适于发出探测光束;所述接收模块包括一个或多个光电探测器,适于接收所述探测光束被目标物反射的回波光束,并转换为电信号。
与现有技术相比,本发明的技术方案具有以下优点:
本发明实施例中电极单元位于第一反射镜背离所述有源区的一侧,即所述电极单元并不位于出光方向上,从而使出光面和电极单元分别位于激光器的不同面上,这样电极单元无需设置用于使光出射的开孔,因此电极单元具有较大的有效宽度,从而减小了寄生电阻和寄生电感等寄生参数,进而可以提高驱动信号的传输能力,并提高激光器发光强度的均匀性。
附图说明
图1是公开技术一种激光器的俯视图;
图2是图1激光器中发光单元的电路图;
图3是图1中发光单元中沿OO’线的多个发光点的亮度分布图;
图4是公开技术中另一种激光器的侧面示意图;
图5是图4激光器的俯视图;
图6是本发明第一实施例激光器的侧面示意图;
图7是图6所示激光器的阵列排布俯视图;
图8是本发明第二实施例激光器的侧视图;
图9是图8所示激光器的俯视图;
图10是本发明第三实施例激光器的侧视图;
图11是图10所示激光器俯视图。
具体实施方式
如背景技术所述,公开的技术中光发射单元存在发光强度不均的问题。下面分析产生所述问题的原因。结合参考图1和图2,分别示出了公开技术中一种激光器的俯视图和发光单元的电路图。所述激光器为面阵型激光器,包括阵列式排布的多个发光点20,从而使面阵激光器发出的光可以覆盖较大的视场范 围,进而提高利于激光雷达的探测效率。为了使面阵激光器中二维阵列排布的多个发光点20同时具有较高的发光功率,公开技术通常采用列寻址结构,对每一列发光点20单独驱动发光,因而位于同一列的多个发光点20构成一发光单元10,且所述发光单元10具有沿列向延伸的长条状结构。
所述激光器外接一驱动电路12,向各发光单元10提供驱动信号,位于同一发光单元10的多个发光点20为并联连接,在驱动电路12提供驱动信号时可同时受驱发光。具体地,驱动电路12通过位于列向端部的焊盘11向发光单元10加载驱动信号,因为发光单元10中多个发光点共用的互连金属层为长条状,具有长度大且宽度小的特点。驱动电路12通过长条状互连金属层端部的焊盘,向金属层加载大电流、高频率的驱动信号。由于互连金属层的长宽比较大,容易产生电阻和寄生电容,这使得随着发光点远离焊盘11,发光点上的偏压逐渐降低,因此发光亮度也逐渐降低。
如图3所示的发光单元中沿OO’方向多个发光点的亮度分布图,靠近焊盘11的发光点21亮度明显大于远离焊盘11的发光点22。因而激光器发光强度存在不均匀的问题。
参考图4,示出了公开技术中另一种激光器的侧面示意图。所述激光器为VCSEL顶发光面阵激光器,包括:衬底31以及位于衬底31上的发光叠层(包括沿出光方向依次设置的第一反射镜37、有源区38和第二反射镜39),所述衬底31的背面覆盖有阴极接触金属30,所述发光叠层上形成有阳极接触金属36,以及位于阳极接触金属36上的互连金属层34,所述互连金属层34中形成有开孔35,用于使发光叠层发出的光出射。
结合参考图5所示的互连金属层34的俯视图。由于互连金属层34中形成有开孔35,所述互连金属层34用于使电流经过的有效宽度进一步减小,从而使得电阻和寄生电感等寄生参数进一步增大,进而导致高频驱动信号从焊盘40向远端的传输能力下降,这使得激光器发光强度不均匀的问题更加严重。
为了解决上述技术问题,本发明实施例提供一种激光器,包括:发光叠层,包括沿出光方向依次设置的第一反射镜、有源区、第二反射镜;所述发光叠层包括一个或多个发光单元,每个所述发光单元包括多个规则排布的发光点;电极单元,位于所述第一反射镜背离所述有源区的一侧,每个电极单元与一个所 述发光单元相对应,用于通过驱动端向所述发光单元加载驱动信号。本发明实施例中电极单元位于第一反射镜背离所述有源区的一侧,即所述电极单元并不位于出光方向上,从而使出光面和电极单元分别位于激光器的不同面上,这样电极单元无需设置用于使光出射的开孔,因此电极单元具有较大的有效宽度,从而减小了寄生电阻和寄生电感等寄生参数,进而可以提高驱动信号的传输能力,并提高激光器发光强度的均匀性。
为使本发明的上述目的、特征和优点能够更为明显易懂,下面结合附图对本发明的具体实施例做详细的说明。
结合参考图6和图7,示出了本发明第一实施例激光器的侧面和俯视示意图。本实施例激光器为面阵激光器。更具体地,此处以垂直腔面发射激光器(Vertical-Cavity Surface-Emitting Laser,VCSEL)为例进行说明。
所述激光器包括:
衬底100,用于提供工艺操作平台。
本实施例中,所述衬底100还可以作为微透镜的形成基础,因此所述衬底100的材料还可以是适宜于工艺需要或易于集成的材料。
本实施例中,所述衬底100的材料为砷化镓。在其他实施例中,所述衬底的材料还可以为氮化镓、硅等其它III/V化合物。
具体地,所述衬底100为N型掺杂的砷化镓。
发光叠层,包括:沿出光方向依次设置的第一反射镜105、有源区104和第二反射镜102。
本实施例中,所述出光方向为图中自上至下的方向(图中箭头所示方向),因此,依次位于所述衬底100上的为第二反射镜102、有源区104和第一反射镜105。其中有源区104用于辐射光子,所述第一反射镜105和第二反射镜102构成谐振腔,用于使辐射的光子形成相干振荡,提供足够强的注入电流使得光子能够克服器件自身的各种损耗形成激射,之后激光从作为出射镜的反射镜出射。一般,VCSEL出射光位于近红外波段。
本实施例中,所述第二反射镜102为分布式布拉格反射镜(Distributed Bragg Reflector,DBR)。分布式布拉格反射镜为一种多层结构,由两种不同折射率 的光学薄膜交替排列构成。在两种光学薄膜的每个界面处都发生菲涅尔反射。在工作波长时,两个相邻界面处反射光的光程差为半个波长,另外,界面处的反射也会造成半个波长的光程差。因此,工作波长的光在界面处的所有反射光发生相干增强。
需要说明的是,两个DBR的反射率不同,其中一侧DBR的反射率接近100%,可作为谐振腔的全反射镜,而另一侧DBR反射率相对较低,可作为谐振腔的出射镜。本实施例中,激光器的出光方向自上至下,因此第二反射镜102为出射镜,采用N型DBR。
所述分布式布拉格反射镜为不同折射率的两种光学薄膜交替形成,如Al xGa 1-xAs/Al 1-yGa yAs,其中x与y取值可以不同。并且每层光学薄膜的光程为λ/4,其中,λ为激光器的工作波长。
有源区104,通过多量子阱结构,建立起实现内部载流子反转分布的基础,以辐射出光子。
例如,所述有源区104包括砷化镓铟(GaInAs)/砷化镓(GaAs)量子肼。
第一反射镜105,用于和第二反射镜102相配合构成谐振腔。为了使激光器的出射光能自上至下出射,所述第一反射镜105为全反射镜。具体地,所述第一反射镜105也为分布式布拉格反射镜,由不同折射率的两种光学薄膜交替形成,如Al xGa 1-xAs/Al 1-yGa yAs,其中x与y取值可以不同。并且每层光学薄膜的光程为λ/4,其中,λ为激光器的工作波长。
需要说明的是,在其他实施例中,第一反射镜105和第二反射镜102,也可以由其他介质材料构成。具体地,通过层叠高折射率材料和低折射率材料而形成,对于高折射率材料,可以采用五二氧化二钽、氧化铪、以及二氧化钛等。对于低折射率材料,可以采用氟化镁以及二氧化硅等。
需要说明的是,通过对第一反射镜105和第二反射镜102进行掺杂以降低其电阻。具体的,第一反射镜105和第二反射镜102的掺杂类型不同,其中第二反射镜102与衬底100的掺杂类型相同。
结合参考图6和图7,第一反射镜105、有源区104及部分第二反射镜102通过间隔结构106分隔为不同的区域,从而形成不同的发光点203。如图7所示,VCSEL激光器为面阵型激光器,包括多个发光点203。激光器发光时,需要通 过驱动电路向有源区104加载驱动信号,以实现光子辐射,从而构成发光点203。本实施例中,所述发光点203还包括:
第一接触电极108,位于所述第一反射镜105背离有源区104的面上;以及第二接触电极101,位于衬底100背离有源区104的面上。
此处所述第一接触电极108为阳极接触金属层,用于连接驱动电路的正极,第二接触电极101为阴极接触电极,用于连接驱动电路的负极。
本实施例中,所述激光器从衬底100的位置处出光,所述第二接触电极101中形成有出光孔。
所述激光器还包括电极单元107,位于所述第一反射镜105背离所述有源区104的一侧,每个电极单元107与一个所述发光单元200相对应,用于向所述发光单元200加载驱动信号。
本发明实施例激光器出光方向为自有源区104至第二反射镜102的方向(自上至下,如图6箭头所示),所述电极单元107位于第一反射镜105背离所述有源区104的一侧。因此所述电极单元107无需设置出光孔,从而保证了电极单元107材料的完整性,减小了电极单元107的电感和寄生电容,因此电极单元107具有较大的有效宽度,从而减小了寄生电阻和寄生电感等寄生参数,进而可以提高驱动信号的传输能力,并提高激光器发光强度的均匀性。
如图6所示,本实施例中,所述电极单元107位于所述第一接触电极108上方,且与第一接触电极108电性连接。具体地说,所述电极单元107用于实现驱动电路和发光点之间的电性连接,将外接电路的驱动信号传输至所述第一接触电极108。
本实施例所述电极单元107与所述第一接触电极108之间还形成有接触层109,用于降低电极单元107与所述第一接触电极108之间的接触电阻。
图7是图6所示激光器的阵列排布俯视图。
发光点203示意了图6所示电极101形成的出光位置,本实施例中发光点203呈矩阵阵列排布,且沿列向的发光点203构成一发光单元200。同一发光单元200的多个第一接触电极108连接至对应的电极单元107,相应地,所述电极单元107 为沿列向的条形电极。此外,本实施例中,激光器各发光点203的第二接触电极101相连。在其他实施例中,所述发光点203还可以呈蜂窝式排列。
本实施例中,由于发光点203的出光面为衬底100,所述电极单元107相对于发光叠层位于出光面另一侧,因此所述电极单元107可以采用非透光材料。具体地,所述电极单元107为互连金属层。所述互连金属层可以为铜、铝等金属材料。
本发明实施例激光器包括多列条形电极,且相邻条形电极之间通过绝缘层120实现绝缘。
所述绝缘层120可以采用氧化硅、氮化硅、氮氧化硅等。这些材料为半导体工艺常用的绝缘材料,且具有较低的介电常数,从而可以降低寄生电容。
继续参考图6,本发明实施例激光器的出光方向为自有源区104至第二反射镜102的方向。发光叠层形成的光通过衬底100出射,即所述衬底100背离所述第二反射镜102的面为出光面,定义所述衬底100实现出光的面为衬底背面。本发明实施例中,所述衬底背面还形成有微透镜结构110,用于对发光叠层形成的光进行会聚。
具体地,所述衬底100背面对应每一发光点的位置形成有具有一定曲率的凸面,所述凸面构成所述微透镜结构110。
需要说明的是,第二接触电极101位于微透镜结构110之间的衬底背面。本实施例中,激光器各发光点的第二接触电极101相连。相应地,所述第一接触电极101为位于衬底背面的金属层,所述金属层在微透镜结构的位置处形成有出光孔。
请继续参考图7,电极单元107包括两个驱动端,用于向发光单元加载驱动信号。
此处所述驱动端指的是电极单元107与驱动电路电连接的连接端。所述驱动端设置于所述电极单元延伸方向的两端,以减少驱动信号的传输距离。
本实施例中,所述电极单元107为条形电极,所述条形电极的两个端部为驱动端201和202。相应地,两个驱动端201和202配合,同时向一发光单元200加载驱动信号,使发光单元200的发光点203进行发光。与公开技术中,每一列 的发光点仅有一个驱动端的方案相比,本发明实施例中每个发光单元200连接两个驱动端201和202,发光点对应驱动端的距离缩小,可以减少驱动信号从驱动电路到发光点203的传输距离,从而可以减少寄生电容和电阻造成的驱动信号减弱问题,进而提高激光器的光均匀性。
具体地,驱动端201和202各设有一个焊盘,所述焊盘用于与驱动电路相连,以加载所述驱动信号。在其他实施例中,所述驱动端还可以通过焊球、打线等的方式实现与驱动电路的电连接。
需要说明的是,在其他实施例中,也可以每一电极单元107只设置有一个驱动端,本发明实施例通过将出光面和电连接分别设置在激光器的不同面上,已经实现提高出光均匀性的目的。
作为优选,在电极单元上设置多个驱动端(比如:3个及以上),通过多个驱动端同时加载驱动信号,可以使得电能量能通过多个位置注入到发光单元,从而进一步缩短驱动信号的传输距离,进而进一步减小寄生电容和电阻,以改善发光不均的问题。
参考图8和图9,示意出了本发明第二实施例激光器的侧视图和俯视图。本实施例与第一实施例的相同之处不再赘述,本实施例与第一实施例的不同之处在于:
所述激光器还包括:绝缘层320,位于第一反射镜305远离所述有源区304的一侧,所述绝缘层320覆盖电极单元307并隔离相邻的电极单元307。
所述绝缘层320用于实现相邻电极单元307之间的绝缘,还用于实现驱动端之间的绝缘。
所述绝缘层320采用低介电常数的介质材料,从而可以降低寄生电容。例如,氧化硅、氮化硅、氮氧化硅等。这些材料为半导体工艺常用的介质材料,从而具有良好的工艺兼容性。
所述电极单元307包括多个驱动端,用于向发光单元311加载驱动信号。驱动端通过导电元件将电极单元307与驱动电路电连接。
在本实施例中,导电元件为焊球,如图9所示,每个驱动端设有一个焊球310,所述绝缘层320与所述焊球310对应的位置设有开孔,所述焊球310填充于所述开口中且凸出于绝缘层320的表面,所述焊球310用于加载驱动信号。
具体的,所述焊球310与开口露出的电极单元307相连。沿着列向电极单元307依次设置多个焊球310,可以进一步减少驱动信号自驱动电路至电极单元307的传输距离,进而可以减少寄生电阻和电容。
与在电极单元307端部设置驱动端的方案相比,本发明实施例中,驱动端在列向的可布置的位置更加灵活,可布置的数量也更多,从而能进一步减少寄生电阻和电容,进而提高出光均匀性。
本发明实施例通过焊球的方式实现列向电极单元307上多个驱动端的设置。在其他实施例中,导电元件还可以通过在绝缘层中设置接触插塞的方式实现,将电极单元307与驱动电路电连接。
如图9所示,所述焊球310沿电极单元307延伸方向均匀排列,从而可以保证每个驱动端具有相近的信号传输距离,提高激光器出光均匀性。
本实施例中,所述电极单元307为沿列向的条形电极,所述焊球310沿列向均匀排列。
需要说明的是,公开技术中焊球310的尺寸较大,为了避免相邻电极单元307之间的短路,本发明实施例中,电极单元307的焊球沿所述电极单元307的延伸方向交错排列,这样可以增大相邻电极单元307的相邻焊球之间的距离,减少相邻焊球之间短接的问题。在其他实施例中,如果驱动端实现驱动电路和电极单元之间电连接的互连结构尺寸较小,也可以设置互连结构沿所述电极单元307的延伸方向并非交错排列。
需要说明的是,在上述实施例中,所述激光器包括衬底,所述衬底为发光叠层的一部分,且所述衬底位于第二反射镜背离有源区的一面,即所述激光器为背面发光激光器。在其他实施例中,还可以在衬底上形成发光单元之后,去除所述衬底。也就是说,激光器还可以不包括衬底。
还需要说明的是,对于设置有微透镜结构的实施例,在激光器不包括衬底时,在激光器出光侧设置微透镜结构即可。
参考图10和图11分别示出了本发明第三实施例激光器的侧视图和俯视图。本发明实施例中与第一实施例中类似的,激光器为背向发光激光器,激光器包括:作为出光面的背面,以及与背面相对的正面。出光方向A自激光器的正面至背面。
第一接触电极1为阳极接触电极,通过电极单元3与驱动电路相连。
所述电极单元3位于激光器的正面,为激光器的阳极互连金属层。如图11所示,电极单元3且为沿列向的多个条形电极,且平行分布在激光器的发光区602。
第二接触电极2为阴极接触电极,位于激光器的背面。与第一实施例的不同之处在于:本发明实施例中,所述第二接触电极2设置在第二反射镜上,通过垂直于发光叠层方向的互连结构连接至阴极互连金属层4,所述阴极互连金属层4位于激光器的正面,且位于发光区602周边的外围区601。
本发明实施例中,阳极互连金属层和阴极互连金属层4均位于激光器的正面,构成共面电极。驱动电路可以通过焊球的方式与所述阳极互连金属层和阴极互连金属层4相连。
需要说明的是,在其他实施例中,还可以为第一接触电极1为阴极接触电极,第二接触电极2为阳极接触电极,分别用于加载驱动电路中不同电性的驱动信号。
需要说明的是,本实施例中,第一接触电极和第二接触电极为共面电极,激光器可以包括N型掺杂的衬底、或不掺杂的衬底,所述衬底制备成微透镜结构。在其他实施例中,激光器可以不包含衬底。具体的,在发光叠层形成之后,去除衬底。
本实施例中,激光器中多个发光点的第二接触电极2连接在一起,所述阴极互连金属层4为矩形结构。具体的,此处阴极互连金属层4为设置于所述发光区一侧的矩形。在其他实施例中,还可以为围绕发光区的环形、椭圆形、跑道形等结构。
需要说明的是,本发明的激光器发光点排布不限于图7、图9或图11所示的矩阵阵列排布,还可以是其他规则排列方式,如图5所示的交错排布。电极单元也不限于图7、图9或图11所示的矩形。例如:图5所示交错排布的发光点, 一个发光单元可以是沿一个延伸方向规则排布的多个发光点;此外,电极单元的形状可根据发光点的排布位置设置,如图5所示的弯曲边缘形状。
为了解决所述技术问题,本发明实施例还提供一种光源模组,包括激光器和驱动板。
其中,所述激光器为本发明实施例激光器,技术细节参考前述实施例的相关描述。
所述驱动板包括:驱动电路,用于提供驱动信号;以及第一焊垫,用于与所述电极单元电连接向所述电极单元提供驱动信号。本发明光源模组形成的出射光具有较高的均匀性。
此外,所述驱动板还包括:第二焊垫,用于向激光器提供不同电性的信号。
所述驱动板可以为集成电路(integrated circuit,IC)芯片或印制电路板(printed circuit board,PCB)。IC芯片或PCB板上设置有不同电性的第一焊垫和第二焊垫,分别与激光器对应电性的互连金属通过导电元件电连接。驱动电路包含控制驱动信号通断的驱动开关,在驱动开关导通时,驱动信号注入激光器,控制激光器发光;驱动开关断开时,激光器停止发光。在IC芯片中,所述驱动开关可以为MOS开关管,如PMOS或NMOS。在PCB板中,所述驱动开关可以为GaN开关。
在一具体实施例中,采用IC芯片作为驱动板,用MOS开关管控制激光器发光。集成于IC芯片上的MOS开关管通常为长宽比较大的结构,对于本发明以焊球作为导电元件的实施例,可以使MOS开关管的延伸方向与激光器电极单元的延伸方向一致,多个焊球分别沿MOS开关管的延伸方向与其电连接,从而使MOS开关管的驱动信号从多个驱动端输出,降低驱动信号在MOS开关管延伸方向传输造成的损失。
相应地,本发明还提供一种激光雷达,包括发射模块和接收模块,
所述发射模块包括本发明实施例提供的所述的光源模组,适于发出探测光束;所述接收模块包括一个或多个光电探测器,适于接收所述探测光束被目标物反射的回波光束,并转换为电信号。
本发明实施例激光雷达的发射模块中,光源模组提供均匀的出射光,可以提高激光雷达的探测精度。
虽然本发明披露如上,但本发明并非限定于此。任何本领域技术人员,在不脱离本发明的精神和范围内,均可作各种更动与修改,因此本发明的保护范围应当以权利要求所限定的范围为准。虽然本发明披露如上,但本发明并非限定于此。任何本领域技术人员,在不脱离本发明的精神和范围内,均可作各种更动与修改,因此本发明的保护范围应当以权利要求所限定的范围为准。

Claims (17)

  1. 一种激光器,包括:
    发光叠层,包括沿出光方向依次设置的第一反射镜、有源区、第二反射镜;
    所述发光叠层包括一个或多个发光单元,每个所述发光单元包括多个规则排布的发光点;
    电极单元,位于所述第一反射镜背离所述有源区的一侧,每个电极单元与一个所述发光单元相对应,用于向所述发光单元加载驱动信号。
  2. 如权利要求1所述的激光器,其特征在于,所述电极单元包括两个驱动端,用于向发光单元加载驱动信号;
    所述驱动端设置于所述电极单元延伸方向的两端,每个驱动端设有一个焊盘,所述焊盘用于加载所述驱动信号。
  3. 如权利要求1所述的激光器,其特征在于,所述激光器还包括:绝缘层,位于第一反射镜远离所述有源区的一侧,所述绝缘层覆盖电极单元并隔离相邻的电极单元。
  4. 如权利要求3所述的激光器,其特征在于,所述电极单元包括多个驱动端,用于向发光单元加载驱动信号;每个驱动端设有一个焊球,所述绝缘层与所述焊球对应的位置设有开孔,所述焊球通过开孔凸出于绝缘层表面,所述焊球用于加载驱动信号。
  5. 如权利要求4所述的激光器,其特征在于,所述焊球沿电极单元延伸方向均匀排列。
  6. 如权利要求4所述的激光器,其特征在于,相邻所述电极单元的焊球沿所述电极单元的延伸方向交错排列。
  7. 如权利要求1所述的激光器,其特征在于,所述发光叠层还包括衬底,所述衬底位于第二反射镜背离有源区的一面;
    所述发光点包括:
    第一接触电极,位于第一反射镜背离有源区的面上;
    第二接触电极,位于衬底背离有源区的面上。
  8. 如权利要求7所述的激光器,其特征在于,所述第二接触电极形成有出光孔。
  9. 如权利要求1所述的激光器,其特征在于,所述发光点包括:第一接触电极,位于第一反射镜背离有源区的面上;第二接触电极,位于第二反射镜朝向有源区的面上。
  10. 如权利要求7或9所述的激光器,其特征在于,同一发光单元的多个第一接触电极连接至对应的所述电极单元;
    激光器中各发光点的第二接触电极相连。
  11. 如权利要求1-9任一项所述的激光器,其特征在于,所述发光叠层在出光面上具有微透镜结构。
  12. 如权利要求1-9任一项所述的激光器,其特征在于,所述激光器为垂直腔面发射激光器,所述第一反射镜和第二反射镜为分布式布拉格反射镜。
  13. 如权利要求12所述的激光器,其特征在于,所述激光器为背面发光激光器。
  14. 一种光源模组,包括激光器和驱动板,所述激光器为权利要求1~13任一项所述的激光器;
    所述驱动板包括:驱动电路,用于提供驱动信号;以及第一焊垫,用于与所述电极单元电连接向所述电极单元提供驱动信号。
  15. 如权利要求14所述的光源模组,其特征在于,所述驱动板还包括:第二焊垫,用于向激光器提供不同电性的信号。
  16. 如权利要求15所述的光源模组,其特征在于,所述第二焊垫为围绕电极单元的环形焊垫。
  17. 一种激光雷达,包括发射模块和接收模块,
    所述发射模块包括权利要求14~16任一项所述的光源模组,适于发出探测光束;
    所述接收模块包括一个或多个光电探测器,适于接收所述探测光束被目标物反射的回波光束,并转换为电信号。
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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240045126A1 (en) * 2022-08-04 2024-02-08 Stmicroelectronics (Research & Development) Limited Flood and dot emitter
CN116667155A (zh) * 2023-07-24 2023-08-29 深圳市速腾聚创科技有限公司 发射模组、激光发射模块和激光雷达设备
CN116774190A (zh) * 2023-08-17 2023-09-19 深圳市速腾聚创科技有限公司 发射模组、激光发射模块和激光雷达设备

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101154792A (zh) * 2006-09-28 2008-04-02 富士施乐株式会社 表面发射型半导体阵列装置
CN102664347A (zh) * 2012-05-04 2012-09-12 中国科学院长春光学精密机械与物理研究所 具有模式控制结构的高功率电泵外腔垂直腔面发射激光器
CN102709808A (zh) * 2012-05-29 2012-10-03 中国科学院长春光学精密机械与物理研究所 微透镜集成垂直腔面发射激光器的相干控制阵列结构
CN103181040A (zh) * 2010-11-03 2013-06-26 皇家飞利浦电子股份有限公司 用于垂直外部腔体表面发射激光器的光学元件
CN109149361A (zh) * 2018-10-10 2019-01-04 南京工程学院 一种基于电介质布拉格反射镜的垂直腔面发射硅衬底GaN激光器及其制备方法
WO2020050777A1 (en) * 2018-09-04 2020-03-12 Ams Sensors Asia Pte. Ltd. Linear vcsel arrays
CN111162451A (zh) * 2019-12-26 2020-05-15 浙江博升光电科技有限公司 底部发射垂直腔面发射激光器
CN111682402A (zh) * 2020-06-19 2020-09-18 北京工业大学 一种对称dbr结构的面发射半导体激光芯片及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE342596T1 (de) * 2002-04-25 2006-11-15 Avalon Photonics Ag Hochgeschwindigkeitstauglicher vertikalresonator- oberflächenemissionslaser (vcsel) mit niedriger parasitärkapazität
JP6083194B2 (ja) * 2012-11-06 2017-02-22 富士ゼロックス株式会社 面発光型半導体レーザアレイ装置、光源および光源モジュール
JP7027032B2 (ja) * 2016-09-28 2022-03-01 スタンレー電気株式会社 照明用の垂直共振器型発光素子モジュール
JP7293631B2 (ja) * 2018-03-01 2023-06-20 株式会社リコー 反射鏡、面発光レーザ、反射鏡の製造方法及び面発光レーザの製造方法
CN108777433A (zh) * 2018-03-23 2018-11-09 江苏宜兴德融科技有限公司 垂直面腔表面发射激光器及其制备方法
CN208078381U (zh) * 2018-03-23 2018-11-09 江苏宜兴德融科技有限公司 垂直面腔表面发射激光器
CN109672086A (zh) * 2019-01-29 2019-04-23 太原理工大学 衬底掺杂反馈垂直腔面发射混沌激光芯片
CN114223102A (zh) * 2019-08-20 2022-03-22 索尼半导体解决方案公司 半导体激光器驱动装置、电子设备及半导体激光器驱动装置的制造方法
CN111900623B (zh) * 2020-07-31 2021-11-30 常州纵慧芯光半导体科技有限公司 一种激光器及其制造方法与应用

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101154792A (zh) * 2006-09-28 2008-04-02 富士施乐株式会社 表面发射型半导体阵列装置
CN103181040A (zh) * 2010-11-03 2013-06-26 皇家飞利浦电子股份有限公司 用于垂直外部腔体表面发射激光器的光学元件
CN102664347A (zh) * 2012-05-04 2012-09-12 中国科学院长春光学精密机械与物理研究所 具有模式控制结构的高功率电泵外腔垂直腔面发射激光器
CN102709808A (zh) * 2012-05-29 2012-10-03 中国科学院长春光学精密机械与物理研究所 微透镜集成垂直腔面发射激光器的相干控制阵列结构
WO2020050777A1 (en) * 2018-09-04 2020-03-12 Ams Sensors Asia Pte. Ltd. Linear vcsel arrays
CN109149361A (zh) * 2018-10-10 2019-01-04 南京工程学院 一种基于电介质布拉格反射镜的垂直腔面发射硅衬底GaN激光器及其制备方法
CN111162451A (zh) * 2019-12-26 2020-05-15 浙江博升光电科技有限公司 底部发射垂直腔面发射激光器
CN111682402A (zh) * 2020-06-19 2020-09-18 北京工业大学 一种对称dbr结构的面发射半导体激光芯片及其制备方法

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