WO2022193579A1 - 一种扩散装置 - Google Patents

一种扩散装置 Download PDF

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Publication number
WO2022193579A1
WO2022193579A1 PCT/CN2021/118301 CN2021118301W WO2022193579A1 WO 2022193579 A1 WO2022193579 A1 WO 2022193579A1 CN 2021118301 W CN2021118301 W CN 2021118301W WO 2022193579 A1 WO2022193579 A1 WO 2022193579A1
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Prior art keywords
liquid
silicon wafer
diffusion
chain
roller
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PCT/CN2021/118301
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English (en)
French (fr)
Inventor
任常瑞
王敏
符黎明
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常州时创能源股份有限公司
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Publication of WO2022193579A1 publication Critical patent/WO2022193579A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C13/00—Means for manipulating or holding work, e.g. for separate articles
    • B05C13/02—Means for manipulating or holding work, e.g. for separate articles for particular articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the utility model relates to the technical field of solar cell diffusion, in particular to a diffusion device.
  • the diameter of the furnace tube of the diffusion furnace used in the diffusion and gettering process of solar cells has become larger, and the increase of the furnace tube space is caused by the increase of the furnace tube.
  • the problems caused are becoming more and more obvious.
  • the tightness of the diffusion furnace tube becomes worse, and the difficulty of debugging the diffusion process increases, which increases the difference in the diffusion effect of silicon wafers located at different positions of the diffusion furnace tube, and also increases the difference in the diffusion effect within a single silicon wafer.
  • the electrical performance of the solar cell is not ideal and the discreteness is not good.
  • the diffusion gettering process of large-sized silicon wafers can use a chain diffusion furnace for diffusion gettering.
  • the diffusion source of chain diffusion is liquid, and the uniformity of its coating on the surface of the silicon wafer greatly affects Diffusion gettering effect.
  • the purpose of this utility model is to provide a diffusion device, which can improve the diffusion gettering effect of silicon wafers, improve the uniformity of the diffusion gettering process of silicon wafers, and can realize large-scale industrialized continuous production.
  • a diffusion device includes a chain coating module and a chain annealing module which are connected in sequence.
  • the silicon wafer is first coated with a layer of liquid source on its surface through the chain coating module, and then pushed through the chain annealing module at high temperature to complete the process.
  • the chain coating module includes a liquid storage tank, a conveying roller and a liquid coating roller located above the conveying roller, a plurality of drip pipes are arranged above the conveying roller, the liquid storage tank and the dripping The liquid pipes are connected by pipelines.
  • the drip tube is arranged above the liquid coating roller or the liquid coating roller is located above the silicon wafer on the side of the device inlet.
  • the axis of the liquid coating roller corresponds up and down with the axis of the conveying roller below it.
  • the distance between the liquid coating roller and the silicon wafer is adjustable to control the thickness of the liquid source on the surface of the silicon wafer.
  • the liquid storage tank is provided with a pump body, an input end of the pump body is connected to the liquid storage tank, and an output end of the pump body is connected to a drip tube through a pipeline.
  • the drip tube is provided with a first sensor on one side of the device inlet.
  • the pump body transports the liquid source to the drip tube, and the drip tube drops the liquid source.
  • the drip tube drops the liquid source.
  • a second sensor is arranged inside the liquid storage tank, and the second sensor is used for sensing the liquid level of the liquid source in the liquid storage tank.
  • the liquid coating roller is a sponge roller, a rubber roller or a plastic roller.
  • a drying unit is further provided on the side of the liquid coating roller located at the outlet of the device.
  • the chain annealing module further includes a chain oxidation module.
  • the chain oxidation module is provided with a wet oxygen oxidation unit.
  • the silicon wafer is forwarded to the chain coating module through the conveying roller.
  • the control system transmits a signal to the liquid storage tank.
  • the pump body transports the liquid source of the liquid storage tank to the drip tube, and the drip tube directly drips the liquid source on the upper surface of the silicon wafer.
  • the roller further coats the liquid source on the surface of the silicon wafer evenly.
  • the silicon wafer coated with the liquid source on the surface is transported to the drying unit along with the conveying roller, and the liquid source on the surface of the silicon wafer is dried.
  • the dried silicon wafers are forwarded to the chain annealing module along with the transfer rollers, and the diffusion source on the surface of the silicon wafers is advanced at high temperature to complete the chain diffusion gettering process of the silicon wafers.
  • the silicon wafer is forwarded to the chain coating module through the conveying roller, and when the first sensor senses the silicon wafer, the control system transmits a signal to the liquid storage
  • the pump body of the tank transports the liquid source of the liquid storage tank to the drip tube, and the drip tube directly drips the liquid source on the liquid coating roller, and the liquid coating roller is in a liquid state.
  • the position of the roller, the liquid coating roller evenly coats the liquid source on the upper surface of the silicon wafer.
  • the silicon wafer coated with the liquid source on the surface is transported to the drying unit along with the conveying roller, and the liquid source on the surface of the silicon wafer is dried.
  • the dried silicon wafers are forwarded to the chain annealing module along with the transfer rollers, and the diffusion source on the surface of the silicon wafers is advanced at high temperature to complete the chain diffusion gettering process of the silicon wafers.
  • the silicon wafer is forwarded to the chain-type oxidation module through the conveying roller, and the chain-type wet oxygen oxidation is performed to produce a surface of the silicon wafer.
  • the thicker oxide layer reduces the dead layer formed on the surface of the silicon wafer by the chain diffusion gettering process and improves the conversion efficiency of the solar cell.
  • the utility model has the following advantages: the diffusion device of the utility model improves the uniformity of the liquid diffusion source coating on the surface of the silicon wafer, the process is pollution-free, and greatly saves the liquid diffusion source. It is suitable for silicon wafers of any size, and realizes large-scale industrial production of chain diffusion; the diffusion device of the utility model can reduce the diffusion dead layer on the surface of the silicon wafer and improve the conversion efficiency of solar cells.
  • Fig. 1 is the structural representation of the diffusion device of the present invention
  • Fig. 2 is another structural schematic diagram of the diffusion device of the present invention.
  • FIG. 3 is a schematic structural diagram of the chain coating module according to Embodiment 1 of the present invention.
  • FIG. 4 is a schematic structural diagram of a chain coating module according to Embodiment 2 of the present invention.
  • the diffusion device of the present invention includes a chain coating module 100 and a chain annealing module 200 which are connected in sequence, and the direction of the arrow in the figure is the traveling direction of the silicon wafer.
  • the silicon wafer 1 is first coated with a layer of liquid source 10 on its surface through the chain coating module 100 , and then advanced at a high temperature through the chain annealing module 200 to complete the chain diffusion gettering process.
  • the diffusion device of the present invention includes a chain coating module 100 , a chain annealing module 200 and a chain oxidation module 300 connected in sequence, and the arrow direction in the figure is the direction of the silicon wafer.
  • the silicon wafer 1 is first coated with a layer of liquid source 10 on its surface through the chain coating module 100 , and then advanced at a high temperature through the chain annealing module 200 to complete the chain diffusion gettering process.
  • the present invention combines the chain-type oxidation module 300 to produce an oxide layer on the surface of the silicon wafer by wet oxygen oxidation, which is used to reduce the chain-type diffusion gettering
  • the dead layer formed on the surface of the silicon wafer by the process improves the conversion efficiency of the solar cell.
  • the chain coating module 100 of the present invention is used to coat a layer of liquid source 10 on the surface of the silicon wafer 1 , including a liquid storage tank 2 , a transfer roller 3 and a coating layer located above the transfer roller 3 .
  • the liquid roller 4 wherein the axis of the liquid coating roller 4 corresponds up and down with the axis of the conveying roller 3 below it.
  • Above the conveying roller 3, a plurality of drip tubes 5 are arranged side by side, and the drip tubes 5 are arranged above the silicon wafer where the coating roller 4 is located on one side of the inlet of the entire device.
  • the liquid storage tank 2 is used for storing the liquid source 10, and the liquid source 10 is a liquid diffusion gettering source, and the liquid diffusion gettering source includes but is not limited to phosphoric acid and boric acid.
  • the liquid storage tank 2 is provided with a pump body 6 , the input end of the pump body 6 is connected to the liquid storage tank 2 , and the output end of the pump body 6 is connected to the drip tube 5 through the pipeline 6 .
  • the drip tube 5 is provided with a first sensor 7 on one side of the device inlet. When the first sensor 7 senses the silicon wafer 1, the signal is transmitted to the pump body 6 through the control system, and the pump body 6 transports the liquid source 10 to the dripping liquid.
  • the pipe 5, the drop pipe 5 drops the liquid source 10 on the silicon wafer 1.
  • a second sensor 8 is arranged inside the liquid storage tank 2 , and the second sensor 8 is used to sense the liquid level of the liquid source 10 in the liquid storage tank 2 .
  • the control The system sends out a warning message to remind.
  • the liquid coating roller 4 is a sponge roller, a rubber roller or a plastic roller, and the present invention is preferably a rubber roller.
  • a drying unit 9 is also provided on the side of the liquid coating roller 4 which is located at the outlet of the device.
  • the control system transmits the signal to the pump body 6, and the pump body 6 sends the liquid storage tank
  • the liquid source 10 of the The liquid source 10 on the upper surface of the silicon wafer 1 is further coated evenly.
  • the distance between the liquid coating roller 4 and the silicon wafer 1 can be adjusted to control the thickness of the liquid source on the surface of the silicon wafer.
  • the silicon wafer 1 coated with the liquid source 10 on the surface is conveyed forward to the drying unit 9 along with the conveying roller 3 to dry the liquid source 10 on the surface of the silicon wafer 1 .
  • the dried silicon wafer 1 is continuously conveyed to the chain annealing module 200 along with the conveying roller 3 forward, and the diffusion source on the surface of the silicon wafer is advanced at a high temperature to complete the chain diffusion gettering process of the silicon wafer.
  • the chain coating module 100 of the present invention is used to coat a layer of liquid source 10 on the surface of the silicon wafer 1, including a liquid storage tank 2, a transfer roller 3 and a coating layer located above the transfer roller 3.
  • the liquid roller 4 wherein the axis of the liquid coating roller 4 corresponds up and down with the axis of the conveying roller 3 below it.
  • Above the conveying roller 3 is provided a plurality of drip tubes 5 arranged side by side, and the drip tubes 5 are provided above the liquid coating roller 4 .
  • the liquid storage tank 2 is used to store the liquid getter source 8, and the liquid getter source 8 is a liquid diffusion source, including but not limited to phosphoric acid and boric acid.
  • the liquid storage tank 2 is provided with a pump body 6 , the input end of the pump body 6 is connected to the liquid storage tank 2 , and the output end of the pump body 6 is connected to the drip tube 5 through the pipeline 6 .
  • the drip tube 5 is provided with a first sensor 7 on one side of the device inlet. When the first sensor 7 senses the silicon wafer 1, the signal is transmitted to the pump body 6 through the control system, and the pump body 6 transports the liquid source 10 to the dripping liquid.
  • the pipe 5, the drop pipe 5 drops the liquid source 10 on the silicon wafer 1.
  • a second sensor 8 is arranged inside the liquid storage tank 2 , and the second sensor 8 is used to sense the liquid level of the liquid source 10 in the liquid storage tank 2 .
  • the control The system sends out a warning message to remind.
  • the liquid coating roller 4 is a sponge roller, a rubber roller or a plastic roller, and the present invention is preferably a rubber roller.
  • a drying unit 9 is also provided on the side of the liquid coating roller 4 located at the outlet of the device.
  • the control system transmits the signal to the pump body 6, and the pump body 6 sends the liquid storage tank
  • the liquid source 10 of the When in position, the liquid coating roller 4 rotates simultaneously with the conveying roller 3, and the liquid coating roller 4 evenly coats the liquid source 10 on the upper surface of the silicon wafer.
  • the distance between the liquid coating roller 4 and the silicon wafer 1 can be adjusted to control the thickness of the liquid source on the surface of the silicon wafer.
  • the silicon wafer 1 coated with the liquid source 10 on the surface is conveyed forward to the drying unit 9 along with the conveying roller 3 to dry the liquid source 10 on the surface of the silicon wafer 1 .
  • the dried silicon wafer 1 is continuously conveyed to the chain annealing module 200 along with the conveying roller 3 forward, and the diffusion source on the surface of the silicon wafer is advanced at a high temperature to complete the chain diffusion gettering process of the silicon wafer.
  • the silicon wafer that has completed the chain diffusion gettering in any of the embodiments 1-2 is conveyed forward to the chain oxidation module 300 through the conveying roller, and a layer of silicon wafer with a certain thickness is formed on the surface of the silicon wafer through wet oxygen oxidation.
  • the oxide layer is used to reduce the dead layer formed on the surface of the silicon wafer by the chain diffusion gettering process and improve the conversion efficiency of the solar cell.
  • the oxide layer can be removed by a subsequent pickling process.
  • the diffusion device of the utility model improves the coating uniformity of the liquid diffusion source on the surface of the silicon wafer, the process is pollution-free, and the usage amount of the liquid diffusion source is greatly saved; it is suitable for silicon wafers of any size, and realizes chain diffusion. Large-scale industrial production.
  • the diffusion device of the utility model is combined with the chain type oxidation module, which can reduce the dead layer formed by the chain type diffusion on the surface of the silicon wafer and improve the conversion efficiency of the solar cell.

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Abstract

一种扩散装置，包括依次连接的链式涂覆模块及链式退火模块，硅片先经过链式涂覆模块在其表面涂覆一层液态源，再经过链式退火模块进行高温推进，完成链式扩散吸杂工艺，链式涂覆模块包括储液槽、传送辊和位于传送辊上方的涂液辊，传送辊的上方设置有多根滴液管。该扩散装置提高了液态扩散源在硅片表面涂覆的均匀性，过程无污染，而且大大节省了液态扩散源的使用量；适用于任何尺寸的硅片，实现了链式扩散吸杂的大规模产业化生产；该扩散装置能够减少硅片表面的扩散死层，提高了太阳能电池的转换效率。

Description

一种扩散装置 技术领域
本实用新型涉及太阳能电池扩散技术领域，尤其涉及一种扩散装置。
 背景技术
随着太阳能电池的规格越来越向大尺寸硅片方向发展，以及追求更高的转换效率，导致太阳能电池扩散吸杂工序所用的扩散炉炉管的管径变大，炉管空间的增加所带来的问题也越来越明显。扩散炉管的密封性变差，扩散工艺调试难度加大，使得位于扩散炉管不同位置的硅片的扩散效果差异增大，以及单片硅片片内的扩散效果差异也随之增大，最终导致太阳能电池的电性能不够理想，离散性不好。因此，大尺寸硅片的扩散吸杂工序可使用链式扩散炉来进行扩散吸杂，然而链式扩散的扩散源为液体，其涂覆在硅片表面的均匀程度在很大程度上影响了扩散吸杂效果。
 技术解决方案
发明目的：本实用新型的目的是提出一种扩散装置，能够改善硅片的扩散吸杂效果，提高硅片扩散吸杂工艺的均匀性，能够实现大规模的产业化连续生产。
技术方案：本实用新型所采用如下技术方案：
一种扩散装置，包括依次连接的链式涂覆模块及链式退火模块，硅片先经过链式涂覆模块在其表面涂覆一层液态源，再经过链式退火模块进行高温推进，完成扩散工艺，所述链式涂覆模块包括储液槽、传送辊和位于传送辊上方的涂液辊，所述传送辊的上方设置有多根滴液管，所述储液槽和所述滴液管通过管路连接。
优选的，所述滴液管设置在涂液辊的上方或涂液辊位于装置入口一侧的硅片上方。
优选的，所述涂液辊的轴心与其下方的传送辊的轴心上下对应。
优选的，所述涂液辊与硅片之间的距离可调，用于控制硅片表面液态源的厚度。
优选的，所述储液槽设置有泵体，所述泵体的输入端连接储液槽，所述泵体的输出端通过管路连接滴液管。
优选的，所述滴液管位于装置入口的一侧设置有第一传感器，所述第一传感器感应到硅片时，泵体将液态源输送至滴液管，滴液管将液态源滴落在硅片上或涂液辊上。
优选的，所述储液槽内部设置有第二传感器，所述第二传感器用于感应储液槽内液态源的液位。
优选的，所述涂液辊为海绵辊、橡胶辊或塑料辊。
优选的，所述涂液辊位于装置出口的一侧还设置有烘干单元。
优选的，所述链式退火模块之后还包括链式氧化模块。
优选的，所述链式氧化模块设置有湿氧氧化单元。
作为一种优选方案，本实用新型的扩散装置工作时，硅片通过传送辊向前传送至链式涂覆模块，当第一传感器感应到硅片时，控制系统将信号传送给位于储液槽的泵体，泵体将储液槽的液态源输送至滴液管，滴液管将液态源直接滴涂在硅片上表面，硅片随着传送辊传送至涂液辊的位置，涂液辊将硅片表面的液态源进一步涂覆均匀。表面涂覆有液态源的硅片随着传送辊向前传送至烘干单元，将硅片表面的液态源烘干。烘干后的硅片随着传送辊向前传送至链式退火模块，对硅片表面的扩散源进行高温推进，完成硅片的链式扩散吸杂工艺。
作为另一种优选方案，本实用新型的扩散装置工作时，硅片通过传送辊向前传送至链式涂覆模块，当第一传感器感应到硅片时，控制系统将信号传送给位于储液槽的泵体，泵体将储液槽的液态源输送至滴液管，滴液管将液态源直接滴加在涂液辊上，涂液辊处于带液状态，当硅片传送至涂液辊的位置，涂液辊将液态源均匀地涂覆在硅片上表面。表面涂覆有液态源的硅片随着传送辊向前传送至烘干单元，将硅片表面的液态源烘干。烘干后的硅片随着传送辊向前传送至链式退火模块，对硅片表面的扩散源进行高温推进，完成硅片的链式扩散吸杂工艺。
作为另一种优选方案，本实用新型的扩散装置完成硅片的扩散吸杂工艺后，硅片通过传送辊向前传送至链式氧化模块，进行链式湿氧氧化，在硅片表面生产一层较厚的氧化层，减少链式扩散吸杂工艺在硅片表面形成的死层，提高太阳能电池的转换效率。
 有益效果
有益效果：与现有技术相比，本实用新型具有以下优点：本实用新型的扩散装置提高了液态扩散源在硅片表面涂覆的均匀性，过程无污染，而且大大节省了液态扩散源的使用量；适用于任何尺寸的硅片，实现了链式扩散的大规模产业化生产；本实用新型的扩散装置能够减少硅片表面的扩散死层，提高了太阳能电池的转换效率。
 附图说明
图1是本实用新型的扩散装置的结构示意图；
图2是本实用新型的扩散装置的另一结构示意图；
图3是本实用新型实施例1的链式涂覆模块的结构示意图；
图4是本实用新型实施例2的链式涂覆模块的结构示意图。
 本发明的最佳实施方式
下面结合附图和实施例对本实用新型的技术方案作进一步的说明。
如图1，本实用新型的扩散装置包括依次连接的链式涂覆模块100、链式退火模块200，图中箭头方向为硅片行进方向。硅片1先经过链式涂覆模块100在其表面涂覆一层液态源10；再经过链式退火模块200进行高温推进，完成链式扩散吸杂工艺。
如图2，本实用新型的扩散装置包括依次连接的链式涂覆模块100、链式退火模块200和链式氧化模块300，图中箭头方向为硅片行进方向。硅片1先经过链式涂覆模块100在其表面涂覆一层液态源10；再经过链式退火模块200进行高温推进，完成链式扩散吸杂工艺。由于链式扩散工艺会造成硅片表面的死层效应较严重，因此本实用新型结合链式氧化模块300，利用湿氧氧化在硅片表面生产一层氧化层，用于减少链式扩散吸杂工艺在硅片表面形成的死层，提高了太阳能电池的转换效率。
实施例1
如图1和图3，本实用新型的链式涂覆模块100，用于在硅片1表面涂覆一层液态源10，包括储液槽2、传送辊3和位于传送辊3上方的涂液辊4，其中涂液辊4的轴心与其下方的传送辊3的轴心上下对应。传送辊3的上方设置有多根并排排列的滴液管5，滴液管5设置在涂液辊4位于整个装置入口一侧的硅片上方。储液槽2用于储存液态源10，液态源10为液态扩散吸杂源，液态扩散吸杂源包括但不限于磷酸和硼酸。储液槽2内部设置有泵体6，泵体6的输入端连接储液槽2，泵体6的输出端通过管路6连接滴液管5。滴液管5位于装置入口的一侧设置有第一传感器7，第一传感器7感应到硅片1时，通过控制系统将信号传送至泵体6，泵体6将液态源10输送至滴液管5，滴液管5将液态源10滴落在硅片1上。储液槽2内部设置有第二传感器8，第二传感器8用于感应储液槽2内液态源10的液位，当储液槽2的液位低于第二传感器8的位置时，控制系统发出预警信息进行提醒。其中，涂液辊4为海绵辊、橡胶辊或塑料辊，本实用新型优选为橡胶辊。涂液辊4位于装置出口的一侧还设置有烘干单元9。
当硅片1通过传送辊3向前传送至链式涂覆模块100，此时第一传感器7感应到硅片1时，通过控制系统将信号传送给泵体6，泵体6将储液槽2的液态源10输送至滴液管5，滴液管5将液态源10直接滴涂在硅片1表面，硅片1随着传送辊2传送至涂液辊4的位置，涂液辊4将硅片1上表面的液态源10进一步涂覆均匀。涂液辊4与硅片1之间的距离可以调整，用于控制硅片表面液态源的厚度。表面涂覆有液态源10的硅片1随着传送辊3继续向前传送至烘干单元9，将硅片1表面的液态源10烘干。烘干后的硅片1随着传送辊3向前继续传送至链式退火模块200，对硅片表面的扩散源进行高温推进，完成硅片的链式扩散吸杂工艺。
实施例2
如图1和图4，本实用新型的链式涂覆模块100，用于在硅片1表面涂覆一层液态源10，包括储液槽2、传送辊3和位于传送辊3上方的涂液辊4，其中涂液辊4的轴心与其下方的传送辊3的轴心上下对应。传送辊3的上方设置有多根并排排列的滴液管5，滴液管5设置在涂液辊4的上方。储液槽2用于储存液态吸杂源8，液态吸杂源8为液态扩散源，包括但不限于磷酸和硼酸。储液槽2内部设置有泵体6，泵体6的输入端连接储液槽2，泵体6的输出端通过管路6连接滴液管5。滴液管5位于装置入口的一侧设置有第一传感器7，第一传感器7感应到硅片1时，通过控制系统将信号传送至泵体6，泵体6将液态源10输送至滴液管5，滴液管5将液态源10滴落在硅片1上。储液槽2内部设置有第二传感器8，第二传感器8用于感应储液槽2内液态源10的液位，当储液槽2的液位低于第二传感器8的位置时，控制系统发出预警信息进行提醒。其中，涂液辊4为海绵辊、橡胶辊或塑料辊，本实用新型优选为橡胶辊。涂液辊4位于装置出口的一侧还设置有烘干单元9。
当硅片1通过传送辊3向前传送至链式涂覆模块100，此时第一传感器7感应到硅片1时，通过控制系统将信号传送给泵体6，泵体6将储液槽2的液态源10输送至滴液管5，滴液管5将液态源10直接滴加至涂液辊4上，涂液辊4处于带液状态，当硅片1传送至涂液辊4的位置时，涂液辊4同传送辊3同时转动，涂液辊4将液态源10均匀地涂覆在硅片上表面。涂液辊4与硅片1之间的距离可以调整，用于控制硅片表面液态源的厚度。表面涂覆有液态源10的硅片1随着传送辊3继续向前传送至烘干单元9，将硅片1表面的液态源10烘干。烘干后的硅片1随着传送辊3向前继续传送至链式退火模块200，对硅片表面的扩散源进行高温推进，完成硅片的链式扩散吸杂工艺。
实施例3
将实施例1-2中任一实施例完成链式扩散吸杂的硅片，通过传送辊继续向前传送至链式氧化模块300，通过湿氧氧化在硅片表面生成一层具有一定厚度的氧化层，该氧化层用于减少链式扩散吸杂工艺在硅片表面形成的死层，提高太阳能电池的转换效率。该氧化层可通过后道酸洗工序去除。
本实用新型的扩散装置提高了液态扩散源在硅片表面涂覆的均匀性，过程无污染，而且大大节省了液态扩散源的使用量；适用于任何尺寸的硅片，实现了链式扩散的大规模产业化生产。本实用新型的扩散装置结合了链式氧化模块，能够减少链式扩散在硅片表面形成的死层，提高了太阳能电池的转换效率。

Claims (11)

  1. 一种扩散装置，包括依次连接的链式涂覆模块及链式退火模块，硅片先经过链式涂覆模块在其表面涂覆一层液态源，再经过链式退火模块进行高温推进，完成链式扩散工艺，其特征在于：所述链式涂覆模块包括储液槽、传送辊和位于传送辊上方的涂液辊，所述传送辊的上方设置有多根滴液管。
  2. 根据权利要求1所述的一种扩散装置，其特征在于：所述滴液管设置在涂液辊的上方或涂液辊位于装置入口一侧的硅片上方。
  3. 根据权利要求2所述的一种扩散装置，其特征在于：所述涂液辊的轴心与其下方的传送辊的轴心上下对应。
  4. 根据权利要求3所述的一种扩散装置，其特征在于：所述涂液辊与硅片之间的距离可调，用于控制硅片表面液态源的厚度。
  5. 根据权利要求1所述的一种扩散装置，其特征在于：所述储液槽内部设置有泵体，所述泵体的输入端连接储液槽，所述泵体的输出端连接滴液管。
  6. 根据权利要求5所述的一种扩散装置，其特征在于：所述滴液管位于装置入口的一侧设置有第一传感器，所述第一传感器感应到硅片时，泵体将液态源输送至滴液管，滴液管将液态源滴落在硅片上或涂液辊上。
  7. 根据权利要求6所述的一种扩散装置，其特征在于：所述储液槽内部设置有第二传感器，所述第二传感器用于感应储液槽内液态源的液位。
  8. 根据权利要求1所述的一种扩散装置，其特征在于：所述涂液辊为海绵辊、橡胶辊或塑料辊。
  9. 根据权利要求1所述的一种扩散装置，其特征在于：所述涂液辊位于装置出口的一侧还设置有烘干单元。
  10. 根据权利要求1所述的一种扩散装置，其特征在于：所述链式退火模块之后还包括链式氧化模块。
  11. 根据权利要求10所述的一种扩散装置，其特征在于：所述链式氧化模块设置有湿氧氧化单元。
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