WO2022189916A1 - 表示装置、及び表示装置の作製方法 - Google Patents

表示装置、及び表示装置の作製方法 Download PDF

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Publication number
WO2022189916A1
WO2022189916A1 PCT/IB2022/051908 IB2022051908W WO2022189916A1 WO 2022189916 A1 WO2022189916 A1 WO 2022189916A1 IB 2022051908 W IB2022051908 W IB 2022051908W WO 2022189916 A1 WO2022189916 A1 WO 2022189916A1
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Prior art keywords
layer
light
light emitting
emitting element
film
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Ceased
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PCT/IB2022/051908
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English (en)
French (fr)
Japanese (ja)
Inventor
山崎舜平
瀬尾哲史
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to KR1020267006048A priority Critical patent/KR20260046181A/ko
Priority to CN202280019162.2A priority patent/CN117083984A/zh
Priority to KR1020237030327A priority patent/KR102934079B1/ko
Priority to US18/549,205 priority patent/US20240172487A1/en
Priority to JP2023504877A priority patent/JP7817984B2/ja
Publication of WO2022189916A1 publication Critical patent/WO2022189916A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • One embodiment of the present invention relates to a display device.
  • One embodiment of the present invention relates to a method for manufacturing a display device.
  • one aspect of the present invention is not limited to the above technical field.
  • Technical fields of one embodiment of the present invention disclosed in this specification and the like include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices, input/output devices, and driving methods thereof. , or methods for producing them, can be mentioned as an example.
  • a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics.
  • Devices that require high-definition display panels include, for example, smartphones, tablet terminals, and notebook computers.
  • stationary display devices such as television devices and monitor devices are also required to have higher definition along with higher resolution.
  • devices that require the highest definition include, for example, devices for virtual reality (VR) or augmented reality (AR).
  • VR virtual reality
  • AR augmented reality
  • Display devices that can be applied to display panels typically include liquid crystal display devices, organic EL (Electro Luminescence) elements, light-emitting devices equipped with light-emitting elements such as light-emitting diodes (LEDs), and electrophoretic display devices.
  • Examples include electronic paper that performs display by, for example.
  • Patent Document 1 describes an example of a display device for VR using an organic EL element.
  • An object of one embodiment of the present invention is to provide a high-definition display device.
  • An object of one embodiment of the present invention is to provide a display device with a high aperture ratio.
  • An object of one embodiment of the present invention is to provide a display device with high luminance.
  • An object of one embodiment of the present invention is to provide a high-contrast display device.
  • An object of one embodiment of the present invention is to provide a highly reliable display device.
  • An object of one embodiment of the present invention is to provide a display device with a novel structure.
  • An object of one embodiment of the present invention is to provide a novel method for manufacturing a display device.
  • An object of one embodiment of the present invention is to provide a method for manufacturing the above display device with high yield.
  • One aspect of the present invention aims to alleviate at least one of the problems of the prior art.
  • One embodiment of the present invention is a display device including a first light-emitting element and a second light-emitting element.
  • a first pixel electrode, a first light emitting layer, and a common electrode are laminated in this order.
  • a second pixel electrode, a second light emitting layer, and a common electrode are laminated in this order.
  • a region between the first light emitting element and the second light emitting element has a first layer and a second layer.
  • the first layer overlies the second light-emitting layer and includes the same material as the first light-emitting layer.
  • a second layer overlaps the first light-emitting layer and includes the same material as the second light-emitting layer.
  • the edge of the first light emitting layer and the edge of the first layer are provided to face each other.
  • the edge of the second light emitting layer and the edge of the second layer are provided to face each other.
  • Another embodiment of the present invention is a display device including a first light-emitting element and a second light-emitting element.
  • a first pixel electrode, a first light emitting layer, a first intermediate layer, a third light emitting layer, and a common electrode are laminated in this order.
  • a second pixel electrode, a second light emitting layer, a second intermediate layer, a fourth light emitting layer, and a common electrode are laminated in this order.
  • a first layer, a second layer, a third layer, and a fourth layer are provided between the first light-emitting element and the second light-emitting element.
  • the first layer overlaps the second light-emitting layer, the second intermediate layer, and the fourth light-emitting layer and includes the same material as the first light-emitting layer.
  • a second layer overlaps the first light-emitting layer, the first intermediate layer, and the third light-emitting layer and includes the same material as the second light-emitting layer.
  • a third layer overlaps the first layer and includes the same material as the third light-emitting layer.
  • a fourth layer overlaps the second layer and includes the same material as the fourth light-emitting layer. In a region between the first light emitting element and the second light emitting element, the edge of the first light emitting layer and the edge of the first layer are provided to face each other.
  • the edge of the second light emitting layer and the edge of the second layer are provided to face each other.
  • the edge of the third light emitting layer and the edge of the third layer are provided to face each other.
  • the edge of the fourth light emitting layer and the edge of the fourth layer are provided to face each other.
  • the first light-emitting layer and the third light-emitting layer contain the same material
  • the second light-emitting layer and the fourth light-emitting layer contain the same material
  • the resin layer is preferably positioned between the first light emitting element and the second light emitting element. Further, the end of the first light emitting layer and the end of the first layer face each other with the resin layer interposed therebetween, and the end of the second light emitting layer and the end of the second layer are It is preferable to face each other with a resin layer interposed therebetween.
  • first insulating layer is located in a region between the first light-emitting element and the second light-emitting element, and the first insulating layer is located between the edge of the first light-emitting layer and the second light-emitting layer. , the edge of the first layer, and the edge of the second layer.
  • Another embodiment of the present invention includes a first step of forming a first pixel electrode and a second pixel electrode side by side, and forming an island-shaped electrode over the first pixel electrode using a first metal mask.
  • the first light emitting layer is in contact with the side surface of the first light emitting layer exposed by etching and the side surface of the second light emitting layer. It is preferable to have a seventh step of forming an insulating layer of .
  • an inorganic insulating film formed by an atomic layer deposition method for the first insulating layer it is preferable to use an inorganic insulating film formed by an atomic layer deposition method for the first insulating layer.
  • a display device having a novel configuration can be provided.
  • a novel method for manufacturing a display device can be provided.
  • at least one of the problems of the prior art can be alleviated.
  • 1A to 1D are diagrams showing configuration examples of a display device.
  • 2A to 2C are diagrams showing configuration examples of the display device.
  • 3A and 3B are diagrams showing configuration examples of the display device.
  • 4A and 4B are diagrams illustrating configuration examples of a display device.
  • 5A and 5B are diagrams showing configuration examples of the display device.
  • 6A and 6B are diagrams showing configuration examples of the display device.
  • 7A and 7B are diagrams showing configuration examples of a display device.
  • 8A to 8C are diagrams illustrating an example of a method for manufacturing a display device.
  • 9A to 9C are diagrams illustrating an example of a method for manufacturing a display device.
  • 10A to 10C are diagrams illustrating an example of a method for manufacturing a display device.
  • FIGS. 11A to 11C are diagrams illustrating an example of a method for manufacturing a display device.
  • 12A to 12C are diagrams illustrating an example of a method for manufacturing a display device.
  • FIG. 13 is a perspective view showing an example of a display device.
  • FIG. 14A is a cross-sectional view showing an example of a display device;
  • FIG. 14B is a cross-sectional view showing an example of a transistor;
  • 15A to 15E are diagrams showing examples of pixels of a display device.
  • 16A to 16G are diagrams showing examples of pixels of a display device.
  • 17A to 17F are diagrams showing configuration examples of light-emitting devices.
  • 18A to 18D are diagrams showing examples of pixels of a display device.
  • 18E and 18F are diagrams showing an example of a pixel circuit of a display device.
  • 19A to 19J are diagrams showing configuration examples of display devices.
  • 20A and 20B are diagrams illustrating examples of electronic devices.
  • 21A to 21D are diagrams illustrating examples of electronic devices.
  • 22A to 22F are diagrams illustrating examples of electronic devices.
  • 23A to 23F are diagrams illustrating examples of electronic devices.
  • FIG. 24 is a diagram showing the relationship between product screen size and pixel density.
  • film and the term “layer” can be interchanged with each other.
  • conductive layer or “insulating layer” may be interchangeable with the terms “conductive film” or “insulating film.”
  • an EL layer refers to a layer provided between a pair of electrodes of a light-emitting element and containing at least a light-emitting substance (also referred to as a light-emitting layer) or a laminate including a light-emitting layer.
  • a display panel which is one aspect of a display device, has a function of displaying (outputting) an image or the like on a display surface. Therefore, the display panel is one aspect of the output device.
  • the substrate of the display panel is attached with a connector such as FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package), or the substrate is mounted with a COG (Chip On Glass) method.
  • a connector such as FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package)
  • COG Chip On Glass
  • One embodiment of the present invention is a display device including a light-emitting element (also referred to as a light-emitting device).
  • a display device has at least two light-emitting elements that emit light of different colors. Each light-emitting element has a pair of electrodes and an EL layer therebetween.
  • the light-emitting element is preferably an organic EL element (organic electroluminescence element). Two or more light-emitting elements that emit different colors have EL layers each containing a different material.
  • a full-color display device can be realized by using three types of light-emitting elements that emit red (R), green (G), and blue (B) light.
  • a vapor deposition method using a shadow mask such as a fine metal mask (hereinafter also referred to as FMM: Fine Metal Mask) is used. known to form.
  • FMM Fine Metal Mask
  • island-like organic films are formed due to various influences such as FMM accuracy, positional deviation between the FMM and the substrate, FMM deflection, and broadening of the contour of the formed film due to vapor scattering and the like. Since the shape and position deviate from the design, it is difficult to increase the definition and aperture ratio of the display device. Therefore, measures have been taken to artificially increase the definition (also called pixel density) by applying a special pixel arrangement method such as a pentile arrangement.
  • two adjacent island-shaped organic films can be partially overlapped in order to achieve higher definition and higher aperture ratio.
  • the distance between the light emitting regions can be significantly shortened compared to the case where the two island-shaped organic films are not overlapped.
  • current leakage occurs between the adjacent two light-emitting elements through the overlapped organic film, resulting in unintended light emission.
  • the display quality is degraded due to a decrease in luminance, a decrease in contrast, and the like.
  • power efficiency, power consumption, etc. deteriorate due to leakage current.
  • the organic films of two adjacent light-emitting elements are formed separately using FMM so that the organic films partially overlap each other.
  • a layer containing at least a light-emitting organic compound also referred to as a light-emitting layer
  • FMM light-emitting layer
  • a common film may be used without separately forming the other organic films that constitute the light emitting element.
  • An organic laminated film in which at least two kinds of light-emitting layers and another organic film are laminated is positioned in a region between two adjacent light-emitting elements. After that, by photolithography, a portion of the organic laminated film located between two adjacent light emitting elements is etched to divide the organic laminated film. Thereby, a current leak path (leak path) can be divided between two adjacent light emitting elements. Therefore, brightness can be increased, contrast can be increased, power efficiency can be increased, power consumption can be reduced, and the like.
  • an insulating layer in order to protect the side surfaces of the organic laminated film exposed by etching. Thereby, the reliability of the display device can be improved.
  • a display device in which minute light-emitting elements are integrated can be realized.
  • a so-called stripe arrangement in which R, G, and B are arranged in one direction, and 300 ppi or more A display device with a definition of 500 ppi or more, 700 ppi or more, or 1000 ppi or more can be realized.
  • an effective light emitting area ratio aperture ratio
  • a minute light-emitting element can be manufactured with high precision, so that a complicated pixel arrangement method can be realized.
  • a complicated pixel arrangement method can be realized. For example, not only stripe arrangement but also various arrangement methods such as S stripe arrangement, Bayer arrangement and delta arrangement can be applied.
  • the effective light emitting area ratio refers to the ratio of the area of a region that can be regarded as a light emitting region in one pixel to the area of one pixel calculated from the pixel repetition pitch of the display device.
  • FIG. 1A shows a schematic top view of a display device 100 of one embodiment of the present invention.
  • the display device 100 includes a plurality of light emitting elements 110R that emit red, a plurality of light emitting elements 110G that emit green, and a plurality of light emitting elements 110B that emit blue.
  • the light emitting region of each light emitting element is labeled with R, G, and B. As shown in FIG.
  • the light emitting elements 110R, 110G, and 110B are arranged in a matrix.
  • FIG. 1A shows a so-called stripe arrangement in which light emitting elements of the same color are arranged in one direction.
  • the arrangement method of the light emitting elements is not limited to this, and an arrangement method such as an S-stripe arrangement, a delta arrangement, a Bayer arrangement, a zigzag arrangement, or the like may be applied, or a pentile arrangement may be used.
  • the light emitting elements 110R, 110G, and 110B are arranged in the X direction. In addition, light emitting elements of the same color are arranged in the Y direction intersecting with the X direction.
  • EL elements such as OLEDs (Organic Light Emitting Diodes) or QLEDs (Quantum-dot Light Emitting Diodes) are preferably used as the light emitting elements 110R, 110G, and 110B.
  • the light-emitting substance of the EL element include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), and a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF) material. ) and the like.
  • TADF thermally activated delayed fluorescence
  • FIG. 1B is a schematic cross-sectional view corresponding to dashed-dotted line A1-A2 in FIG. 1A
  • FIG. 1C is a schematic cross-sectional view corresponding to dashed-dotted line B1-B2.
  • FIG. 1B shows cross sections of the light emitting element 110R, the light emitting element 110G, and the light emitting element 110B.
  • the light emitting element 110R has a pixel electrode 111R, an organic layer 115, an organic layer 112R, an organic layer 116, an organic layer 114, and a common electrode 113.
  • the light emitting element 110G has a pixel electrode 111G, an organic layer 115, an organic layer 112G, an organic layer 116, an organic layer 114, and a common electrode 113.
  • the light emitting element 110B has a pixel electrode 111B, an organic layer 115, an organic layer 112B, an organic layer 116, an organic layer 114, and a common electrode 113.
  • the organic layer 114 and the common electrode 113 are commonly provided for the light emitting elements 110R, 110G, and 110B.
  • the organic layer 114 can also be referred to as a common layer.
  • the organic layer 112R of the light-emitting element 110R has at least a light-emitting organic compound that emits red light.
  • the organic layer 112G included in the light-emitting element 110G contains at least a light-emitting organic compound that emits green light.
  • the organic layer 112B included in the light-emitting element 110B contains at least a light-emitting organic compound that emits blue light.
  • the organic layer 112R, the organic layer 112G, and the organic layer 112B can each be called a light-emitting layer.
  • the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B may be referred to as the light-emitting element 110 when describing matters common to them.
  • the symbols omitting the letters may be used. be.
  • the laminated film positioned between the pixel electrode and the common electrode 113 can be called an EL layer.
  • the organic layer 115 is a layer located between the organic layer 112 and the pixel electrode 111 .
  • the organic layer 116 is a layer located between the organic layer 112 and the organic layer 114 .
  • Organic layer 114 is a layer located between organic layer 116 and common electrode 113 .
  • the organic layer 115, the organic layer 116, and the organic layer 114 can each independently have one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.
  • the organic layer 115 has a stacked structure of a hole injection layer and a hole transport layer from the pixel electrode 111 side
  • the organic layer 116 has an electron transport layer
  • the organic layer 114 has an electron injection layer. can do.
  • the organic layer 115 has a stacked structure of an electron injection layer and an electron transport layer from the pixel electrode 111 side
  • the organic layer 116 has a hole transport layer
  • the organic layer 114 has a hole injection layer. can do.
  • organic layer 112, the organic layer 114, the organic layer 115, and the organic layer 116 which are positioned between a pair of electrodes of the light-emitting element, are referred to as organic layers to mean layers constituting the organic EL element. including, but not necessarily including organic compounds.
  • each of the organic layer 112, the organic layer 114, the organic layer 115, and the organic layer 116 can be a film containing only an inorganic compound or an inorganic substance without containing an organic compound.
  • a pixel electrode 111R, a pixel electrode 111G, and a pixel electrode 111B are provided for each light emitting element.
  • the common electrode 113 and the organic layer 114 are provided as a continuous layer common to each light emitting element.
  • a conductive film having a property of transmitting visible light is used for one of the pixel electrodes and the common electrode 113, and a conductive film having a reflective property is used for the other.
  • a protective layer 121 is provided on the common electrode 113 to cover the light emitting elements 110R, 110G, and 110B.
  • the protective layer 121 has a function of preventing impurities such as water from diffusing into each light emitting element from above.
  • a slit 120 is provided between two adjacent light emitting elements.
  • the slit 120 corresponds to an etched portion of the organic layer 115, the organic layer 112, and the organic layer 116 positioned between two adjacent light emitting elements.
  • An insulating layer 125 and a resin layer 126 are provided in the slit 120 .
  • the insulating layer 125 is provided along the side walls and bottom surface of the slit 120 .
  • the resin layer 126 is provided on the insulating layer 125 and has a function of filling the concave portion positioned in the slit 120 and planarizing the upper surface thereof.
  • the slit 120 has the insulating layer 125 and the resin layer 126 , it has the effect of preventing a short circuit between the pixel electrode 111 and the common electrode 113 .
  • the resin layer 126 has the effect of improving the adhesion of the organic layer 114 . That is, since the adhesion of the organic layer 114 is improved by providing the resin layer 126, film peeling of the organic layer 114 can be suppressed.
  • the insulating layer 125 is provided in contact with the side surface of the organic layer (eg, the organic layer 115 or the like), a structure in which the organic layer and the resin layer 126 do not contact can be employed.
  • the organic layer and the resin layer 126 When the organic layer and the resin layer 126 are in contact with each other, the organic layer may be dissolved by an organic solvent or the like contained in the resin layer 126 . Therefore, by providing the insulating layer 125 between the organic layer and the resin layer 126 as shown in this embodiment mode, the side surface of the organic layer can be protected.
  • the slit 120 has a configuration that can divide at least one or more of the hole injection layer, the hole transport layer, the electron blocking layer, the light emitting layer, the hole blocking layer, the electron transport layer, and the electron injection layer. good.
  • the insulating layer 125 can be an insulating layer containing an inorganic material.
  • an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used, for example.
  • the insulating layer 125 may have a single-layer structure or a laminated structure.
  • the oxide insulating film includes a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, and an oxide film.
  • Examples include a hafnium film and a tantalum oxide film.
  • Examples of the nitride insulating film include a silicon nitride film and an aluminum nitride film.
  • As the oxynitride insulating film a silicon oxynitride film, an aluminum oxynitride film, or the like can be given.
  • nitride oxide insulating film a silicon nitride oxide film, an aluminum nitride oxide film, or the like can be given.
  • an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by an ALD method to the insulating layer 125, the insulating layer 125 with few pinholes and an excellent function of protecting the EL layer can be obtained. can be formed.
  • oxynitride refers to a material whose composition contains more oxygen than nitrogen
  • nitride oxide refers to a material whose composition contains more nitrogen than oxygen. point to the material.
  • silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen
  • silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen. indicates
  • a sputtering method, a CVD method, a PLD method, an ALD method, or the like can be used to form the insulating layer 125 .
  • the insulating layer 125 is preferably formed by an ALD method with good coverage.
  • An insulating layer containing an organic material can be suitably used as the resin layer 126 .
  • acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins are applied as the resin layer 126. can do.
  • an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used.
  • PVA polyvinyl alcohol
  • a photosensitive resin can be used as the resin layer 126 .
  • a photoresist may be used as the photosensitive resin.
  • a positive material or a negative material can be used for the photosensitive resin.
  • a colored material for example, a material containing a black pigment
  • a reflective film for example, a metal film containing one or more selected from silver, palladium, copper, titanium, and aluminum
  • a function of improving the light extraction efficiency by reflecting emitted light by the reflecting film may be imparted.
  • the upper surface of the resin layer 126 is preferably as flat as possible, but it may have a gently curved shape.
  • FIG. 1B and the like show an example in which the upper surface of the resin layer 126 has a corrugated shape having concave portions and convex portions, the present invention is not limited to this.
  • the top surface of resin layer 126 may be convex, concave, or flat.
  • a laminated film of an inorganic insulating film and an organic insulating film can also be used as the protective layer 121 .
  • a structure in which an organic insulating film is sandwiched between a pair of inorganic insulating films is preferable.
  • the organic insulating film functions as a planarizing film.
  • the upper surface of the organic insulating film can be flattened, so that the coverage of the inorganic insulating film thereon can be improved, and the barrier property can be enhanced.
  • the upper surface of the protective layer 121 is flat, when a structure (for example, a color filter, an electrode of a touch sensor, or a lens array) is provided above the protective layer 121, an uneven shape due to the structure below may be formed. This is preferable because it can reduce the impact.
  • a structure for example, a color filter, an electrode of a touch sensor, or a lens array
  • the protective layer 121 can have, for example, a single layer structure or a laminated structure including at least an inorganic insulating film.
  • inorganic insulating films include oxide films and nitride films such as silicon oxide films, silicon oxynitride films, silicon nitride oxide films, silicon nitride films, aluminum oxide films, aluminum oxynitride films, and hafnium oxide films.
  • a semiconductor material such as indium gallium oxide or indium gallium zinc oxide may be used for the protective layer 121 .
  • slits 120 may be provided between light emitting elements of the same color. In this way, by providing the slit 120, it is possible to suitably prevent current from flowing through two adjacent EL layers and unintended light emission even between light emitting elements of the same color. Therefore, the contrast can be increased, and a display device with high display quality can be realized.
  • the organic layer 112R, the organic layer 112G, or the organic layer 112B is strip-shaped so that the organic layer 112R, the organic layer 112G, or the organic layer 112B is continuous between the light emitting elements of the same color.
  • FIG. 1A also shows a connection electrode 111C electrically connected to the common electrode 113.
  • FIG. 111 C of connection electrodes are given the electric potential (for example, anode electric potential or cathode electric potential) for supplying to the common electrode 113.
  • FIG. The connection electrode 111C is provided outside the display area where the light emitting elements 110R and the like are arranged. Further, in FIG. 1A, the common electrode 113 is indicated by a dashed line.
  • connection electrodes 111C can be provided along the periphery of the display area. For example, it may be provided along one side of the periphery of the display area, or may be provided over two or more sides of the periphery of the display area. That is, when the top surface shape of the display area is rectangular, the top surface shape of the connection electrode 111C can be strip-shaped, L-shaped, U-shaped (square bracket-shaped), square, or the like.
  • FIG. 1D is a schematic cross-sectional view corresponding to the dashed-dotted line C1-C2 in FIG. 1A.
  • FIG. 1D shows a connection portion 130 where the connection electrode 111C and the common electrode 113 are electrically connected.
  • the connection section 130 the common electrode 113 is provided on the connection electrode 111C with the organic layer 114 interposed therebetween.
  • An insulating layer 125 is provided in contact with the side surface of the connection electrode 111 ⁇ /b>C, and a resin layer 126 is provided on the insulating layer 125 .
  • the organic layer 114 may not be provided on the connecting portion 130 .
  • the connection portion 130 the common electrode 113 is provided on the connection electrode 111 ⁇ /b>C so as to be in contact therewith, and the protective layer 121 is provided to cover the common electrode 113 .
  • FIGS. 2A, 2B, and 2C show examples in which the insulating layer 125 is not provided.
  • the resin layer 126 is provided in contact with the side surfaces of the organic layer 115, the organic layer 112, and the organic layer . Further, as shown in FIG. 2C, a resin layer 126 is provided in contact with the side surface of the connection electrode 111C.
  • FIG. 3A is a cross-sectional schematic diagram including a portion of light emitting element 110R, a portion of light emitting element 110G, and a region therebetween in FIG. 1B.
  • the end of the pixel electrode 111 is preferably tapered.
  • the step coverage of the organic layer 115 and the like can be improved.
  • the end of the object being tapered means that the angle formed by the surface and the surface to be formed is greater than 0 degree and less than 90 degrees in the region of the end, and It refers to having a cross-sectional shape that continuously increases in thickness. Note that although the case where the pixel electrode 111R and the like has a single-layer structure is shown here, a plurality of layers may be laminated.
  • An organic layer 112R is provided to cover the organic layer 115 on the light emitting element 110R side of the slit 120 .
  • a layer 135R is provided on the organic layer 115 on the light emitting element 110G side of the slit 120. As shown in FIG. The layer 135R can also be said to be a cut piece that is left on the side of the light emitting element 110G after a part of the film that will be the organic layer 112R is cut off by the slit 120 .
  • an organic layer 112G is provided to cover the organic layer 115 on the light emitting element 110G side of the slit 120.
  • a layer 135G is provided on the organic layer 112R on the light emitting element 110R side of the slit 120.
  • the layer 135G can also be said to be a cut piece that is left on the side of the light emitting element 110R after a part of the film that will become the organic layer 112G is cut off by the slit 120 .
  • one or both of the layers 135R and 135G may not be formed. Specifically, if the end of the organic layer 112R before forming the slit 120 overlaps the formation position of the slit 120, the layer 135R may not be formed.
  • An organic layer 116 is provided to cover the organic layer 112R and the layer 135G.
  • An organic layer 116 is provided to cover the organic layer 112G and the layer 135R. These organic layers 116 are formed by dividing a continuous film by the slits 120 in the same manner as the organic layer 115 .
  • the insulating layer 125 is provided inside the slit 120 and covers the side surfaces of the pair of organic layers 115, 112R, 112G, 135R, 135G, and the pair of organic layers 116. It is provided in contact with the side surface. Also, the insulating layer 125 is provided to cover the upper surface of the substrate 101 .
  • the resin layer 126 is provided in contact with the upper and side surfaces of the insulating layer 125 .
  • the resin layer 126 has a function of flattening the concave portion of the surface on which the organic layer 114 is formed.
  • the organic layer 114, the common electrode 113, and the protective layer 121 are formed in this order to cover the upper surfaces of the organic layer 116, the insulating layer 125, and the resin layer 126. Note that the organic layer 114 may be omitted if unnecessary.
  • the layers 135R and 135G are portions located at the ends of the film that will become the organic layer 112R or the organic layer 112G.
  • the thickness of the organic film tends to gradually decrease toward the end, so the layers 135R and 135G are thinner than the organic layer 112R or the organic layer 112G. have a part.
  • the layers 135R and 135G may be so thin that they cannot be observed by cross-sectional observation.
  • the layers 135R and 135G contain a light-emitting compound (for example, a fluorescent material, a phosphorescent material, or a quantum dot), they cannot be irradiated with light such as ultraviolet light or visible light in plan view. , light emission is obtained by photoluminescence.
  • the presence of the layers 135R and 135G can be confirmed by observing this light emission with an optical microscope or the like. Specifically, since the layer 135R overlaps the organic layer 112G in the portion where the layer 135R is located, when the portion is irradiated with ultraviolet light or the like, the light from the layer 135R and the light from the organic layer 112G are mixed. Both are confirmed.
  • the layers 135R and 135G contain the same material as the organic layers 112R and 112G.
  • the compounds contained in the layers 135R and 135G can also be estimated.
  • the organic layer 112R and the organic layer 112G are formed separately using FMM, and the other organic layers (the organic layer 115 and the organic layer 116) are formed as a continuous film.
  • the other organic layers are formed as a continuous film.
  • either one of organic layer 115, organic layer 116, or both may be fabricated separately using FMM.
  • fragments of the organic layer 115 or the organic layer 116 may remain in the vicinity of the slit 120 in the same manner as the layer 135R.
  • FIG. 3B is a schematic cross-sectional view when the insulating layer 125 is not provided.
  • the resin layer 126 is provided in contact with a side surface of the pair of organic layers 115, a side surface of the organic layer 112R, a side surface of the organic layer 112G, a side surface of the layer 135R, a side surface of the layer 135G, and a side surface of the pair of organic layers .
  • part of the EL layer may be dissolved by the solvent used when forming the film that becomes the resin layer 126 . Therefore, when the insulating layer 125 is not provided, water or an alcohol such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin is preferably used as a solvent for the resin layer 126 .
  • the solvent is not limited to this, and a solvent that does not dissolve or hardly dissolves the EL layer may be used.
  • the light-emitting element 110R, the light-emitting element 110G, and the region therebetween have been described. has a similar configuration.
  • FIG. 4A shows a schematic cross-sectional view of a display device exemplified below.
  • the display device includes a light-emitting element 110R, a light-emitting element 110G, and a light-emitting element 110B.
  • a light-emitting element 110R, a light-emitting element 110G, and a light-emitting element 110B shown in FIG. 4A are light-emitting elements to which a so-called tandem structure is applied, in which two light-emitting layers are laminated via a charge generation layer (also referred to as an intermediate layer). .
  • a charge generation layer also referred to as an intermediate layer
  • an organic layer 115, an organic layer 112R1, an organic layer 116, a charge generation layer 117, an organic layer 118, an organic layer 112R2, an organic layer 119, an organic layer 114, and a common electrode 113 are laminated on a pixel electrode 111R. It has a configured configuration.
  • the light emitting element 110G includes a pixel electrode 111G, an organic layer 115, an organic layer 112G1, an organic layer 116, a charge generation layer 117, an organic layer 118, an organic layer 112G2, an organic layer 119, an organic layer 114, and a common electrode 113. have.
  • the light emitting element 110B has a pixel electrode 111B, an organic layer 115, an organic layer 112B1, an organic layer 116, a charge generation layer 117, an organic layer 118, an organic layer 112B2, an organic layer 119, an organic layer 114, and a common electrode 113. .
  • a slit 120 is provided between two adjacent light emitting elements.
  • the slit 120 is formed so as to divide the laminated structure from the organic layer 115 to the organic layer 119 provided in the region between the two pixel electrodes.
  • an insulating layer 125 and a resin layer 126 are provided inside the slit 120 . Note that a structure in which the insulating layer 125 is not provided may be employed.
  • FIG. 4B is a schematic cross-sectional view including a portion of the light emitting element 110R, a portion of the light emitting element 110G, and a region therebetween in FIG. 4A.
  • a layer 135G1 is provided between the organic layer 115 and the organic layer 116 on the light emitting element 110R side of the slit 120. As shown in FIG. A layer 135 G 2 is provided between the organic layer 118 and the organic layer 119 .
  • a layer 135R1 is provided between the organic layer 115 and the organic layer 116 on the light emitting element 110G side of the slit 120. As shown in FIG. A layer 135R2 is provided between the organic layer 118 and the organic layer 119. FIG.
  • the layers 135R1 and 135R2 can also be said to be pieces of the films that are part of the organic layers 112R1 and 112R2, respectively, cut off by the slits 120 and remaining on the light emitting element 110G side.
  • the layers 135G1 and 135G2 can also be said to be fragments of the films that become the organic layers 112G1 and 112G2, respectively, cut off by the slit 120 and remaining on the light emitting element 110R side.
  • the side surface of the layer 135R1 and the side surface of the organic layer 112R1 are provided to face each other with the resin layer 126 (and the insulating layer 125) interposed therebetween.
  • the side surfaces of the layer 135R2 and the organic layer 112R2, the layer 135G1 and the organic layer 112G1, and the layer 135G2 and the organic layer 112G2 are provided facing each other with the resin layer 126 (and the insulating layer 125) interposed therebetween.
  • one or more of the layers 135R1, 135R2, 135G1, and 135G2 may not be provided.
  • the stacking order of the organic layer 112R1 and the layer 135G1, the stacking order of the organic layer 112R2 and the layer 135G2, the stacking order of the organic layer 112G1 and the layer 135R1, and the stacking order of the organic layer 112G2 and the layer 135R2 are respectively different from the organic layer 112R1 and the organic layer 135G2.
  • the stacking order of the layer 112G1 or the stacking order of the organic layer 112R2 and the organic layer 112G2 does not matter.
  • the charge generation layer 117 is provided between two light emitting layers (organic layer 112R1 and organic layer 112R2) of the light emitting element.
  • the organic layer 118 is provided between the charge generation layer 117 and the organic layer 112R2.
  • the organic layer 119 is provided between the organic layer 112R2 and the organic layer 114.
  • FIG. Organic layer 118 and organic layer 119 may each independently include one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.
  • the laminated structure from the organic layer 115 to the organic layer 116 and the laminated structure from the organic layer 118 to the organic layer 114 can each be called one light emitting unit.
  • the light-emitting element 110 shown in FIG. 4A and the like can be called a light-emitting element having a tandem structure in which two light-emitting units are stacked with the charge generation layer 117 interposed therebetween.
  • FIG. 5A is a modification of FIG. 3A.
  • FIG. 5A shows an example in which an insulating layer 131 covering the edge of the pixel electrode is provided.
  • the insulating layer 131 has a function of planarizing the surface on which the organic layer 115 is formed.
  • the ends of the insulating layer 131 are preferably tapered.
  • the surface can be gently curved. Therefore, coverage with a film formed over the insulating layer 131 can be improved.
  • Examples of materials that can be used for the insulating layer 131 include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimideamide resins, siloxane resins, benzocyclobutene-based resins, phenolic resins, precursors of these resins, and the like. be done.
  • the insulating layer 131 may have recesses in regions overlapping the slits 120 .
  • This recess can be formed by partially etching the upper portion of the insulating layer 131 during etching for forming the slit 120 .
  • a part of the insulating layer 125 is formed so as to fit in the recess of the insulating layer 131, so that the adhesion therebetween can be improved.
  • the slit 120 is provided in a region overlapping with the insulating layer 131 .
  • the layers 135R and 135G are also provided in regions overlapping with the insulating layer 131. FIG.
  • FIG. 5B is an example in which the insulating layer 131 is applied to FIG. 4B.
  • the slit 120, the layer 135R1, the layer 135R2, the layer 135G1, and the layer 135G2 are provided in regions overlapping the insulating layer 131, respectively.
  • FIG. 6A and 6B are examples in which an insulating layer 132 is provided on the insulating layer 131.
  • FIG. 6A and 6B are examples in which an insulating layer 132 is provided on the insulating layer 131.
  • the insulating layer 132 overlaps the edge of the pixel electrode 111 with the insulating layer 131 interposed therebetween. Also, the insulating layer 132 is provided to cover the end portion of the insulating layer 131 . Also, the insulating layer 132 has a portion in contact with the upper surface of the pixel electrode 111 .
  • the insulating layer 132 preferably has tapered ends. Accordingly, step coverage of a film formed over the insulating layer 132, such as an EL layer provided to cover the end portion of the insulating layer 132, can be improved.
  • the thickness of the insulating layer 132 is preferably thinner than that of the insulating layer 131 .
  • step coverage of a film formed over the insulating layer 132 can be improved.
  • Examples of inorganic insulating materials that can be used for the insulating layer 132 include oxides or nitrides such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, or hafnium oxide. be able to. Alternatively, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, neodymium oxide, or the like may be used.
  • the insulating layer 132 may be laminated with a film containing the inorganic insulating material.
  • a film containing the inorganic insulating material for example, a stacked structure in which a silicon oxide film or a silicon oxynitride film is stacked over a silicon nitride film, a stacked structure in which a silicon oxide film or a silicon oxynitride film is stacked over an aluminum oxide film, or the like can be employed. Since the silicon oxide film and the silicon oxynitride film are films that are particularly difficult to be etched, they are preferably arranged on the upper side.
  • the silicon nitride film and the aluminum oxide film are films into which water, hydrogen, oxygen, and the like are difficult to diffuse, by arranging them on the insulating layer 131 side, gases released from the insulating layer 131 can diffuse into the light-emitting element. Acts as a barrier layer to prevent
  • the slit 120 is provided in a region overlapping with the insulating layer 132 .
  • the layers 135R and 135G are also provided in regions overlapping with the insulating layer 132 .
  • the insulating layer 132 By providing the insulating layer 132, it is possible to prevent the upper surface of the insulating layer 131 from being etched when the slits 120 are formed.
  • FIG. 6B is an example in which the insulating layer 132 is applied to FIG. 5B.
  • the slit 120, the layers 135R1, 135R2, 135G1, and 135G2 are provided in regions overlapping the insulating layer 132 respectively.
  • FIG. 7A is a schematic cross-sectional view of a display device exemplified below.
  • 7A shows a cross section of a region including the light emitting element 110R, the light emitting element 110G, the light emitting element 110B, and the connecting portion 130.
  • FIG. 7B is a schematic cross-sectional view enlarging the slit 120 positioned between the light emitting elements 110R and 110G and its vicinity.
  • a layer 135B which is a part (snip) of the organic layer 112B divided by the slits 120, is provided near the light emitting elements 110R and 110G.
  • a conductive layer 161, a conductive layer 162, and a resin layer 163 are provided under the pixel electrode 111.
  • the conductive layer 161 is provided on the insulating layer 105 .
  • the conductive layer 161 has a portion penetrating through the insulating layer 105 in the opening provided in the insulating layer 105 .
  • the conductive layer 161 functions as a wiring or an electrode that electrically connects a wiring, transistor, electrode, or the like (not shown) located below the insulating layer 105 to the pixel electrode 111 .
  • a conductive layer 162 is provided on the conductive layer 161 and the resin layer 163 .
  • the conductive layer 162 functions as an electrode that electrically connects the conductive layer 161 and the pixel electrode 111 .
  • the light emitting element 110 is a top emission type light emitting element
  • a film reflecting visible light is used as the conductive layer 162
  • a film transmitting visible light is used as the pixel electrode 111R.
  • the conductive layer 162 can function as a reflective electrode by using the film including the conductive layer 162 .
  • the conductive layer 162 and the pixel electrode 111 can be provided over the opening portion (also referred to as the contact portion) of the insulating layer 105 with the resin layer 163 interposed therebetween; can be done. Therefore, the aperture ratio can be increased.
  • 7A and 7B show examples in which the shape of the resin layer 126 is different from the above.
  • the upper portion of the resin layer 126 has a wider shape than the slit 120.
  • the insulating layer 125 is processed using the resin layer 126 as an etching mask, a portion covered with the upper portion of the resin layer 126 remains.
  • part of the sacrificial layer 145 used in the manufacturing process of the display device also remains for the same reason. Specifically, a sacrificial layer 145 is provided on the organic layer 116 in the vicinity of the slit 120 .
  • a portion of the insulating layer 125 is provided to cover the upper surface of the sacrificial layer 145 .
  • a resin layer 126 is provided to cover the sacrificial layer 145 and the insulating layer 125 .
  • the end of the insulating layer 125 and the end of the sacrificial layer 145 each have a tapered shape. Thereby, the step coverage of the organic layer 114 and the like can be improved.
  • the layers 135R, 135G, and 135B each have a region in contact with the insulating layer 125 and overlapping with the insulating layer 125, the sacrificial layer 145, and the resin layer 126.
  • FIG. 7A An example of a method for manufacturing a display device of one embodiment of the present invention is described below with reference to drawings.
  • the display device shown in FIG. 7A will be described as an example.
  • 8A to 11C are schematic cross-sectional views in each step of an example of a method for manufacturing a display device illustrated below.
  • FIG. 8A etc. the cross-sectional schematic diagram in the connection part 130 and its vicinity is also shown on the right side.
  • the thin films (insulating film, semiconductor film, conductive film, etc.) constituting the display device can be formed by sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD). method, atomic layer deposition (ALD: Atomic Layer Deposition) method, or the like.
  • the CVD method includes a plasma enhanced CVD (PECVD) method, a thermal CVD method, and the like.
  • PECVD plasma enhanced CVD
  • thermal CVD methods is a metal organic chemical vapor deposition (MOCVD) method.
  • thin films that make up the display device can be applied by spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, etc. It can be formed by a method such as coating or knife coating.
  • the thin film when processing the thin film that constitutes the display device, a photolithography method or the like can be used.
  • the thin film may be processed by a nanoimprint method, a sandblast method, a lift-off method, or the like.
  • an island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.
  • a photolithography method there are typically the following two methods.
  • One is a method of forming a resist mask on a thin film to be processed, processing the thin film by etching or the like, and removing the resist mask.
  • the other is a method of forming a photosensitive thin film, then performing exposure and development to process the thin film into a desired shape.
  • the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these.
  • ultraviolet rays, KrF laser light, ArF laser light, or the like can also be used.
  • extreme ultraviolet (EUV) light, X-rays, or the like may be used.
  • An electron beam can also be used instead of the light used for exposure.
  • the use of extreme ultraviolet light, X-rays, or electron beams is preferable because extremely fine processing is possible.
  • a photomask is not necessary when exposure is performed by scanning a beam such as an electron beam.
  • substrate 101 a substrate having heat resistance enough to withstand at least heat treatment performed later can be used.
  • a substrate having heat resistance enough to withstand at least heat treatment performed later can be used.
  • a substrate having heat resistance enough to withstand at least heat treatment performed later can be used.
  • a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used.
  • a semiconductor substrate such as a single crystal semiconductor substrate made of silicon, silicon carbide, or the like, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate can be used.
  • the substrate 101 it is preferable to use a substrate in which a semiconductor circuit including a semiconductor element such as a transistor is formed on the above semiconductor substrate or insulating substrate.
  • the semiconductor circuit preferably constitutes, for example, a pixel circuit, a gate line driver circuit (gate driver), a source line driver circuit (source driver), and the like.
  • gate driver gate line driver
  • source driver source driver
  • an arithmetic circuit, a memory circuit, and the like may be configured.
  • An insulating layer 105 is provided on the top of the substrate 101 .
  • the insulating layer 105 is provided with a plurality of openings that reach the transistors, wirings, electrodes, or the like provided over the substrate 101 .
  • the opening can be formed by photolithography.
  • An inorganic insulating material or an organic insulating material can be used as the insulating layer 105 .
  • a conductive film to be the conductive layer 161 is formed over the insulating layer 105 . At this time, recesses are formed in the conductive film due to the openings in the insulating layer 105 .
  • a photosensitive resin is preferably used as the resin layer 163 .
  • the resin layer 163 can be formed by first forming a resin film, exposing the resin film through a photomask, and then performing development processing. After that, in order to adjust the height of the upper surface of the resin layer 163, the upper portion of the resin layer 163 may be etched by ashing or the like.
  • the resin layer 163 when a non-photosensitive resin is used as the resin layer 163, after the resin film is formed, the resin film is coated until the surface of the conductive film, which becomes the conductive layer 161, is exposed so that the thickness is optimal. By etching the upper portion of the film by ashing or the like, the resin layer 163 can be formed.
  • a conductive film to be the conductive layer 161 and a conductive film to be the conductive layer 162 are formed over the resin layer 163 .
  • a resist mask is formed over the two layers of the conductive films by a photolithography method, and unnecessary portions of the conductive films are removed by etching. After that, the resist mask is removed, so that the conductive layers 161 and 162 can be formed in the same step.
  • the conductive layer 161 and the conductive layer 162 are formed in the same step using the same photomask here, the conductive layer 161 and the conductive layer 162 may be formed separately using different photomasks. good.
  • an organic layer 115 is formed on the pixel electrode 111 (FIG. 8B).
  • the organic layer 115 is preferably deposited without using FMM.
  • the organic layer 115 may be produced separately using FMM. In that case, the later description of the organic layer 112R and the like can be used.
  • the organic layer 115 can be preferably formed by a vacuum deposition method.
  • the film is not limited to this, and can be formed by a sputtering method, an inkjet method, or the like. Note that the method is not limited to this, and the film forming method described above can be used as appropriate.
  • the organic layer 112R is preferably formed by vacuum deposition via FMM. Note that the island-shaped organic layer 112R may be formed by a sputtering method using FMM or an inkjet method.
  • FIG. 8C shows how the organic layer 112R is deposited through the FMM 151R.
  • FIG. 8C shows a state in which a film is formed by a so-called face-down method in which the substrate is turned over so that the surface to be formed faces downward.
  • the FMM 151G is used to form an organic layer 112G on the pixel electrode 111G (FIG. 9A).
  • the FMM 151B is used to form an organic layer 112B on the pixel electrode 111B (FIG. 9B).
  • the organic layer 112B can also have a pattern extending outward from the pixel electrode 111B. As a result, as shown in FIG. 9B, a region RB in which the organic layer 112B is stacked on the organic layer 112R and a region GB in which the organic layer 112B is stacked on the organic layer 112G can be formed.
  • the organic layer 112R, the organic layer 112G, and the organic layer 112B are formed on the connection electrode 111C.
  • the formation order is not limited to this.
  • an organic layer 116 is formed to cover the organic layers 112R, 112G, and 112B (FIG. 9C).
  • the organic layer 116 can be formed by a method similar to that of the organic layer 115 .
  • a sacrificial film 144 is formed to cover the organic layer 116 .
  • a film having high resistance to the etching treatment of the organic layer 115, the organic layer 112, and the organic layer 116 that is, a film having a high etching selectivity can be used.
  • a film having a high etching selectivity with respect to the sacrificial film such as the sacrificial film 146 described later, can be used.
  • the sacrificial film 144 be a film that can be removed by a wet etching method that causes little damage to the organic layer 115, the organic layer 112, and the organic layer .
  • the sacrificial film 144 for example, an inorganic film such as a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic insulating film can be suitably used.
  • the sacrificial film 144 can be formed by various film formation methods such as sputtering, vapor deposition, CVD, and ALD.
  • the sacrificial film 144 that is directly formed on the organic layer 116 is preferably formed using the ALD method.
  • metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or the metal materials can be used.
  • a low melting point material such as aluminum or silver.
  • a metal oxide such as indium gallium zinc oxide (In--Ga--Zn oxide, also referred to as IGZO) can be used.
  • indium oxide, indium zinc oxide (In—Zn oxide), indium tin oxide (In—Sn oxide), indium titanium oxide (In—Ti oxide), indium tin zinc oxide (In—Sn -Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), and the like can be used.
  • indium tin oxide containing silicon or the like can be used.
  • element M is aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten , or one or more selected from magnesium).
  • M is preferably one or more selected from gallium, aluminum, and yttrium.
  • an oxide such as aluminum oxide, hafnium oxide, or silicon oxide, a nitride such as silicon nitride or aluminum nitride, or an oxynitride such as silicon oxynitride can be used.
  • Such an inorganic insulating material can be formed using a film formation method such as a sputtering method, a CVD method, or an ALD method.
  • a material that is soluble in a chemically stable solvent may be used for at least the organic layer 116 located on the top of the EL layer.
  • a material that dissolves in water or alcohol can be suitably used for the sacrificial film 144 .
  • the sacrificial film 144 is formed, it is preferably dissolved in a solvent such as water or alcohol and applied by a wet film formation method, and then heat treatment is performed to evaporate the solvent. At this time, heat treatment is preferably performed in a reduced-pressure atmosphere because the solvent can be removed at a low temperature in a short time, so that thermal damage to the EL layer can be reduced.
  • Wet film formation methods that can be used to form the sacrificial film 144 include spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating. There are coats.
  • an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used.
  • PVA polyvinyl alcohol
  • polyvinyl butyral polyvinylpyrrolidone
  • polyethylene glycol polyglycerin
  • pullulan polyethylene glycol
  • pullulan polyglycerin
  • pullulan water-soluble cellulose
  • alcohol-soluble polyamide resin water-soluble polyamide resin
  • the sacrificial film 146 is a film used as a hard mask when etching the sacrificial film 144 later.
  • the sacrificial film 144 is exposed when the sacrificial film 146 is processed later. Therefore, for the sacrificial film 144 and the sacrificial film 146, a combination of films having a high etching selectivity is selected. Therefore, a film that can be used for the sacrificial film 146 can be selected according to the etching conditions for the sacrificial film 144 and the etching conditions for the sacrificial film 146 .
  • the sacrificial film 146 can be selected from various materials according to the etching conditions for the sacrificial film 144 and the etching conditions for the sacrificial film 146 .
  • it can be selected from films that can be used for the sacrificial film 144 .
  • an oxide film can be used as the sacrificial film 146 .
  • an oxide film or an oxynitride film such as silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, hafnium oxide, or hafnium oxynitride can be used.
  • a nitride film can be used as the sacrificial film 146.
  • nitrides such as silicon nitride, aluminum nitride, hafnium nitride, titanium nitride, tantalum nitride, tungsten nitride, gallium nitride, and germanium nitride can also be used.
  • the sacrificial film 144 an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide formed by an ALD method is used, and as the sacrificial film 146, an indium gallium zinc oxide (In—Ga—Zn It is preferable to use a metal oxide containing indium such as an oxide (also referred to as IGZO).
  • the sacrificial film 146 is preferably made of metal such as tungsten, molybdenum, copper, aluminum, titanium, and tantalum, or an alloy containing the metal.
  • an organic film that can be used for the organic layer 115, the organic layer 112, the organic layer 116, or the like may be used.
  • the same organic film used for organic layer 115 , organic layer 112 , or organic layer 116 can be used for sacrificial film 146 .
  • a deposition apparatus can be used in common with the organic layers 115, 112, and 116, which is preferable.
  • the later sacrificial layer 147 can be used as a mask to simultaneously remove the organic layers 115, 112, and 116, etc., the process can be simplified.
  • a resist mask 143 is formed on the sacrificial film 146 at positions overlapping with the pixel electrodes 111R, 111G, and 111B (FIG. 10A).
  • the resist mask 143 can use a resist material containing a photosensitive resin, such as a positive resist material or a negative resist material.
  • the resist mask 143 is formed on the sacrificial film 144 without the sacrificial film 146, if defects such as pinholes are present in the sacrificial film 144, the organic layer 115 and the organic layer 115 and the organic layer 115 may be damaged by the solvent of the resist material. 112, the organic layer 116, etc. may be dissolved. Using the sacrificial film 146 can prevent such a problem from occurring.
  • the resist mask 143 is formed directly on the sacrificial film 144 without using the sacrificial film 146. may be allowed.
  • etching the sacrificial film 146 it is preferable to use etching conditions with a high selectivity so that the sacrificial film 144 is not removed by the etching.
  • Etching of the sacrificial film 146 can be performed by wet etching or dry etching. By using dry etching, reduction of the pattern of the sacrificial layer 147 can be suppressed.
  • the removal of the resist mask 143 can be performed by wet etching or dry etching.
  • the resist mask 143 is removed while the organic layer 116 is covered with the sacrificial film 144, the influence on the organic layers 115, 112, and 116 is suppressed.
  • the organic layer 115, the organic layer 112, and the organic layer 116 come into contact with oxygen, the electrical characteristics may be adversely affected, so it is suitable for etching using oxygen gas such as plasma ashing.
  • the organic layer 116 and the like do not come into contact with the chemical solution, so that the organic layer 116 and the like can be prevented from dissolving.
  • Etching of the sacrificial film 144 can be performed by wet etching or dry etching, but dry etching is preferable because pattern shrinkage can be suppressed.
  • the organic layer 112R, the organic layer 112G, and the organic layer 112B are partly separated by etching, so that the layer 135R, which is a fragment of the organic layer 112R, the layer 135G, which is a fragment of the organic layer 112G, and the organic layer are separated.
  • a layer 135B is formed which is a snippet of 112B.
  • etching gas that does not contain oxygen as a main component is preferably used for etching the organic layer 116, the organic layer 112, and the organic layer 115.
  • Etching gases that do not contain oxygen as a main component include, for example, CF4 , C4F8 , SF6 , CHF3 , Cl2 , H2O , BCl3 , H2, and noble gases (such as He).
  • a mixed gas of the above gas and a diluent gas that does not contain oxygen can be used as an etching gas.
  • the etching of the organic layer 116, the organic layer 112, and the organic layer 115 is not limited to the above, and may be performed by dry etching using another gas, or may be performed by wet etching.
  • etching gas containing oxygen gas or dry etching using oxygen gas is used for etching the organic layer 116, the organic layer 112, and the organic layer 115. Therefore, etching can be performed under low-power conditions while maintaining a sufficiently high etching rate, so that damage due to etching can be reduced. Furthermore, problems such as adhesion of reaction products that occur during etching can be suppressed.
  • an etching gas obtained by adding oxygen gas to the above etching gas that does not contain oxygen as a main component can be used.
  • the insulating layer 105 is exposed when the organic layer 116, the organic layer 112, and the organic layer 115 are etched. Therefore, it is preferable to use a film having high resistance to etching of the organic layer 115 as the insulating layer 105 .
  • the organic layer 115 is etched, the upper portion of the insulating layer 105 may be etched and the portion not covered with the organic layer 115 may be thinned.
  • the sacrificial layer 147 may be etched at the same time when the organic layers 116, 112, and 115 are etched. Etching the organic layer 116, the organic layer 112, the organic layer 115, and the sacrificial layer 147 by the same treatment is preferable because the process can be simplified and the manufacturing cost of the display device can be reduced.
  • sacrificial layer 147 is removed to expose the upper surface of sacrificial layer 145 (FIG. 10C). At this time, it is preferable to leave the sacrificial layer 145 as it is. Note that the sacrificial layer 147 may not be removed at this point.
  • the insulating film 125f functions as a barrier layer that prevents impurities such as water from diffusing into the EL layer.
  • the insulating film 125f is preferably formed by an ALD method, which has excellent step coverage, because the side surfaces of the EL layer can be preferably covered.
  • the insulating film 125f is preferably made of the same material as the sacrificial layer 145 because it can be etched simultaneously in a later step.
  • the insulating film 125f and the sacrificial layer 145 are preferably formed using an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide formed by an ALD method.
  • the material that can be used for the insulating film 125f is not limited to this, and the material that can be used for the sacrificial film 144 can be used as appropriate.
  • a resin layer 126 is formed in a region overlapping with the slit 120 (FIG. 11A).
  • the resin layer 126 can be formed by a method similar to that of the resin layer 163 .
  • the insulating film 125f and the sacrificial layer 145 are preferably etched in the same step.
  • the etching of the sacrificial layer 145 is preferably performed by wet etching that causes less etching damage to the organic layer 116 .
  • wet etching using a tetramethylammonium hydroxide (TMAH) aqueous solution, dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixed liquid thereof is preferably used.
  • TMAH tetramethylammonium hydroxide
  • the insulating film 125f and the sacrificial layer 145 it is preferable to remove one or both of the insulating film 125f and the sacrificial layer 145 by dissolving them in a solvent such as water or alcohol.
  • a solvent such as water or alcohol.
  • alcohol capable of dissolving the insulating film 125f and the sacrificial layer 145 various alcohols such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin can be used.
  • IPA isopropyl alcohol
  • heat treatment is preferably performed in an inert gas atmosphere or a reduced pressure atmosphere.
  • the heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., more preferably 70° C. to 120° C.
  • a reduced-pressure atmosphere is preferable because drying can be performed at a lower temperature.
  • the organic layer 114 is formed to cover the organic layer 116, the insulating layer 125, the sacrificial layer 145, the resin layer 126, and the like.
  • the organic layer 114 can be formed by the same method as the organic layer 115 and the like.
  • a shielding mask may be used to prevent the organic layer 114 from being formed on the connection electrode 111C.
  • the common electrode 113 can be formed by a film forming method such as vapor deposition or sputtering. Alternatively, a film formed by an evaporation method and a film formed by a sputtering method may be stacked.
  • the common electrode 113 is preferably formed so as to include the region where the organic layer 114 is formed. That is, the end portion of the organic layer 114 can overlap with the common electrode 113 .
  • the common electrode 113 may be formed using a shielding mask.
  • connection portion 130 has a structure in which the organic layer 114 is sandwiched between the connection electrode 111C and the common electrode 113. At this time, it is preferable to use a material with as low electric resistance as possible for the organic layer 114 . Alternatively, it is preferable to reduce the electrical resistance in the thickness direction of the organic layer 114 by forming it as thin as possible. For example, by using an electron-injecting or hole-injecting material with a thickness of 1 nm or more and 5 nm or less, preferably 1 nm or more and 3 nm or less, for the organic layer 114, the electric resistance between the connection electrode 111C and the common electrode 113 can be reduced. It may be so small that it can be ignored.
  • a protective layer 121 is formed on the common electrode 113 (FIG. 11C).
  • a sputtering method, a PECVD method, or an ALD method is preferably used for forming the inorganic insulating film used for the protective layer 121 .
  • the ALD method is preferable because it has excellent step coverage and hardly causes defects such as pinholes.
  • the display device shown in FIG. 7A can be manufactured.
  • the resin layer 126 is formed to be wider than the slit 120 in the above example, the width of the resin layer 126 and the width of the slit 120 may be the same.
  • FIG. 12A is a schematic cross-sectional view when the resin layer 126 is formed after forming the insulating film 125f.
  • the resin layer 126 is formed only inside the slit 120 by etching the upper portion of the resin layer 126 by ashing or the like. be able to. At this time, it is preferable to bring the top surface of the resin layer 126 as close to the top surface of the adjacent organic layer 116 as possible. As a result, the step caused by the slit 120 can be reduced, and the step coverage of the organic layer 114 and the like can be improved.
  • a display device can be manufactured as shown in FIG. 12C.
  • FIG. 12C shows an example in which the organic layer 114 is not provided between the connection electrode 111C and the common electrode 113 . Since the connection electrode 111C and the common electrode 113 are in contact with each other, the contact resistance therebetween can be made extremely small, and power consumption can be reduced.
  • the display device of this embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment includes a relatively large screen such as a television device, a desktop or notebook personal computer, a computer monitor, a digital signage, a large game machine such as a pachinko machine, or the like. In addition to electronic devices, it can be used for display parts of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, smartphones, wristwatch terminals, tablet terminals, personal digital assistants, and sound reproducing devices.
  • Display device 400 13 shows a perspective view of the display device 400, and FIG. 14A shows a cross-sectional view of the display device 400. As shown in FIG.
  • the display device 400 has a configuration in which a substrate 452 and a substrate 451 are bonded together.
  • the substrate 452 is clearly indicated by dashed lines.
  • the display device 400 has a display section 462, a circuit 464, wiring 465, and the like.
  • FIG. 13 shows an example in which an IC 473 and an FPC 472 are mounted on the display device 400 . Therefore, the configuration shown in FIG. 13 can also be said to be a display module including the display device 400, an IC (integrated circuit), and an FPC.
  • a scanning line driving circuit for example, can be used as the circuit 464 .
  • the wiring 465 has a function of supplying signals and power to the display section 462 and the circuit 464 .
  • the signal and power are input to the wiring 465 from the outside through the FPC 472 or input to the wiring 465 from the IC 473 .
  • FIG. 13 shows an example in which an IC 473 is provided on a substrate 451 by a COG (Chip On Glass) method, a COF (Chip on Film) method, or the like.
  • IC 473 for example, an IC having a scanning line driver circuit, a signal line driver circuit, or the like can be applied.
  • the display device 400 and the display module may be configured without an IC.
  • the IC may be mounted on the FPC by the COF method or the like.
  • FIG. 14A shows an example of a cross section of the display device 400 when part of the region including the FPC 472, part of the circuit 464, part of the display portion 462, and part of the region including the connection portion are cut. show.
  • FIG. 14A shows an example of a cross section of the display portion 462, in particular, a region including the light emitting element 430b that emits green light and the light emitting element 430c that emits blue light.
  • the display device 400 illustrated in FIG. 14A includes the transistor 202, the transistor 210, the light-emitting elements 430b, 430c, and the like between the substrate 453 and the substrate 454.
  • the light-emitting elements exemplified in Embodiment 1 can be applied to the light-emitting elements 430b and 430c.
  • the three sub-pixels are red (R), green (G), and blue (B).
  • Color sub-pixels such as yellow (Y), cyan (C), and magenta (M) sub-pixels.
  • the four sub-pixels include R, G, B, and white (W) sub-pixels, and R, G, B, and Y four-color sub-pixels. be done.
  • the substrate 454 and the protective layer 416 are adhered via the adhesive layer 442 .
  • the adhesive layer 442 is provided so as to overlap each of the light emitting elements 430b and 430c, and the display device 400 has a solid sealing structure.
  • the light-emitting elements 430b and 430c have conductive layers 411a, 411b, and 411c as pixel electrodes.
  • the conductive layer 411b reflects visible light and functions as a reflective electrode.
  • the conductive layer 411c is transparent to visible light and functions as an optical adjustment layer.
  • the conductive layer 411 a is connected to the conductive layer 222 b included in the transistor 210 through an opening provided in the insulating layer 214 .
  • the transistor 210 has a function of controlling driving of the light emitting element.
  • An EL layer 412G or an EL layer 412B is provided to cover the pixel electrodes.
  • An insulating layer 421 is provided in contact with a side surface of the EL layer 412G and a side surface of the EL layer 412B, and a resin layer 422 is provided so as to fill recesses of the insulating layer 421.
  • FIG. An organic layer 414, a common electrode 413, and a protective layer 416 are provided to cover the EL layers 412G and 412B.
  • a layer 415B and a layer 415G are provided in contact with the insulating layer 421 .
  • Layer 415B includes the same material as EL layer 412B
  • layer 415G includes the same material as EL layer 412G.
  • the light emitted by the light emitting element is emitted to the substrate 452 side.
  • a material having high visible light transmittance is preferably used for the substrate 452 .
  • Both the transistor 202 and the transistor 210 are formed over the substrate 451 . These transistors can be made with the same material and the same process.
  • the substrate 453 and the insulating layer 212 are bonded together by an adhesive layer 455 .
  • a manufacturing substrate provided with the insulating layer 212 , each transistor, each light emitting element, etc., and the substrate 454 provided with the light shielding layer 417 are bonded together by the adhesive layer 442 .
  • the formation substrate is peeled off and a substrate 453 is attached to the exposed surface, so that each component formed over the formation substrate is transferred to the substrate 453 .
  • Each of the substrates 453 and 454 preferably has flexibility. Thereby, the flexibility of the display device 400 can be enhanced.
  • an inorganic insulating film that can be used for the insulating layers 211 and 215 can be used.
  • a connecting portion 204 is provided in a region of the substrate 453 where the substrate 454 does not overlap.
  • the wiring 465 is electrically connected to the FPC 472 through the conductive layer 466 and the connection layer 242 .
  • the conductive layer 466 can be obtained by processing the same conductive film as the pixel electrode. Thereby, the connecting portion 204 and the FPC 472 can be electrically connected via the connecting layer 242 .
  • the transistor 202 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 having a channel formation region 231i and a pair of low-resistance regions 231n, and one of the pair of low-resistance regions 231n.
  • a conductive layer 222a connected to a pair of low-resistance regions 231n, a conductive layer 222b connected to the other of a pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223 have
  • the insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i.
  • the insulating layer 225 is located between the conductive layer 223 and the channel formation region 231i.
  • the conductive layers 222a and 222b are each connected to the low resistance region 231n through openings provided in the insulating layer 215.
  • One of the conductive layers 222a and 222b functions as a source and the other functions as a drain.
  • FIG. 14A shows an example in which the insulating layer 225 covers the upper and side surfaces of the semiconductor layer.
  • the conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layers 225 and 215, respectively.
  • the insulating layer 225 overlaps the channel formation region 231i of the semiconductor layer 231 and does not overlap the low resistance region 231n.
  • the insulating layer 225 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layers 222a and 222b are connected to the low-resistance regions 231n through openings in the insulating layer 215, respectively.
  • an insulating layer 218 may be provided to cover the transistor.
  • the structure of the transistor included in the display device of this embodiment there is no particular limitation on the structure of the transistor included in the display device of this embodiment.
  • a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used.
  • the transistor structure may be either a top-gate type or a bottom-gate type.
  • gates may be provided above and below a semiconductor layer in which a channel is formed.
  • a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates is applied to the transistors 202 and 210 .
  • a transistor may be driven by connecting two gates and applying the same signal to them.
  • the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other.
  • the crystallinity of the semiconductor material used for the semiconductor layer of the transistor is not particularly limited, either.
  • a semiconductor having a crystalline region in the semiconductor) may be used.
  • a single crystal semiconductor or a crystalline semiconductor is preferably used because deterioration in transistor characteristics can be suppressed.
  • a semiconductor layer of a transistor preferably includes a metal oxide (also referred to as an oxide semiconductor).
  • the display device of this embodiment preferably uses a transistor including a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).
  • the bandgap of the metal oxide used for the semiconductor layer of the transistor is preferably 2 eV or more, more preferably 2.5 eV or more.
  • the metal oxide preferably contains at least indium or zinc, and more preferably contains indium and zinc.
  • metal oxides include indium and M (where M is gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium). , hafnium, tantalum, tungsten, magnesium, and cobalt) and zinc.
  • M is preferably one or more selected from gallium, aluminum, yttrium and tin, more preferably gallium.
  • a metal oxide containing indium, M, and zinc may be hereinafter referred to as an In-M-Zn oxide.
  • the atomic ratio of In in the In-M-Zn oxide is preferably equal to or higher than the atomic ratio of M.
  • the atomic ratio of In in the In-M-Zn oxide may be less than the atomic ratio of M.
  • the amount of change in the threshold voltage or the amount of change in the shift voltage (Vsh) measured by NBTIS (Negative Bias Temperature Illumination Stress) test of the transistor can be reduced.
  • the semiconductor layer of the transistor may contain silicon.
  • silicon examples include amorphous silicon and crystalline silicon (low-temperature polysilicon, monocrystalline silicon, etc.).
  • the semiconductor layer of the transistor may have a layered material that functions as a semiconductor.
  • a layered substance is a general term for a group of materials having a layered crystal structure.
  • a layered crystal structure is a structure in which layers formed by covalent or ionic bonds are stacked via bonds such as van der Waals forces that are weaker than covalent or ionic bonds.
  • a layered material has high electrical conductivity within a unit layer, that is, high two-dimensional electrical conductivity. By using a material that functions as a semiconductor and has high two-dimensional electrical conductivity for the channel formation region, a transistor with high on-state current can be provided.
  • Chalcogenides are compounds containing chalcogens (elements belonging to group 16). Chalcogenides include transition metal chalcogenides and Group 13 chalcogenides.
  • transition metal chalcogenides applicable as semiconductor layers of transistors include molybdenum sulfide (typically MoS 2 ), molybdenum selenide (typically MoSe 2 ), molybdenum tellurium (typically MoTe 2 ), tungsten sulfide (typically WS 2 ), tungsten selenide (typically WSe 2 ), tungsten tellurium (typically WTe 2 ), hafnium sulfide (typically HfS 2 ), hafnium selenide (typically HfSe 2 ), zirconium sulfide (typically ZrS 2 ), zirconium selenide (typically ZrSe 2 ), and the like.
  • molybdenum sulfide typically MoS 2
  • molybdenum selenide typically MoSe 2
  • molybdenum tellurium typically MoTe 2
  • tungsten sulfide typically WS 2
  • the transistor included in the circuit 464 and the transistor included in the display portion 462 may have the same structure or different structures.
  • the plurality of transistors included in the circuit 464 may all have the same structure, or may have two or more types.
  • the plurality of transistors included in the display portion 462 may all have the same structure, or may have two or more types.
  • the insulating layer can function as a barrier layer. With such a structure, diffusion of impurities from the outside into the transistor can be effectively suppressed, and the reliability of the display device can be improved.
  • Inorganic insulating films are preferably used as the insulating layer 211, the insulating layer 212, the insulating layer 215, the insulating layer 218, and the insulating layer 225, respectively.
  • As the inorganic insulating film for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, an aluminum nitride film, or the like can be used.
  • a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used.
  • two or more of the inorganic insulating films described above may be laminated and used.
  • An organic insulating film is suitable for the insulating layer 214 that functions as a planarizing layer.
  • materials that can be used for the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimideamide resins, siloxane resins, benzocyclobutene-based resins, phenolic resins, precursors of these resins, and the like.
  • a light shielding layer 417 is preferably provided on the surface of the substrate 454 on the substrate 453 side.
  • various optical members can be arranged outside the substrate 454 .
  • optical members include polarizing plates, retardation plates, light diffusion layers (diffusion films, etc.), antireflection layers, light collecting films, and the like.
  • an antistatic film that suppresses adhesion of dust, a water-repellent film that prevents adhesion of dirt, a hard coat film that suppresses the occurrence of scratches due to use, a shock absorption layer, etc. are arranged on the outside of the substrate 454.
  • an antistatic film that suppresses adhesion of dust, a water-repellent film that prevents adhesion of dirt, a hard coat film that suppresses the occurrence of scratches due to use, a shock absorption layer, etc. are arranged.
  • the protective layer 416 that covers the light-emitting element By providing the protective layer 416 that covers the light-emitting element, it is possible to prevent impurities such as water from entering the light-emitting element and improve the reliability of the light-emitting element.
  • the connecting part 228 is shown in FIG. 14A. At the connecting portion 228, the common electrode 413 and the wiring are electrically connected.
  • FIG. 14A shows an example in which the wiring has the same laminated structure as that of the pixel electrode.
  • the substrates 453 and 454 glass, quartz, ceramics, sapphire, resins, metals, alloys, semiconductors, etc. can be used, respectively.
  • a material that transmits the light is used for the substrate on the side from which the light from the light-emitting element is extracted.
  • the flexibility of the display device can be increased.
  • a polarizing plate may be used as the substrate 453 or the substrate 454 .
  • polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resins, acrylic resins, polyimide resins, polymethyl methacrylate resins, polycarbonate (PC) resins, and polyether resins are used, respectively.
  • PES resin Sulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, or the like can be used.
  • PES polyamide resin
  • aramid polysiloxane resin
  • polystyrene resin polyamideimide resin
  • polyurethane resin polyvinyl chloride resin
  • polyvinylidene chloride resin polypropylene resin
  • PTFE resin polytetrafluoroethylene
  • ABS resin cellulose nanofiber, or the like
  • One or both of the substrates 453 and 454 may be made of glass having a thickness sufficient to be flexible.
  • a substrate having high optical isotropy has small birefringence (it can be said that the amount of birefringence is small).
  • Films with high optical isotropy include triacetyl cellulose (TAC, also called cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.
  • TAC triacetyl cellulose
  • COP cycloolefin polymer
  • COC cycloolefin copolymer
  • a film having a low water absorption rate as the substrate.
  • various curable adhesives such as photocurable adhesives such as ultraviolet curable adhesives, reaction curable adhesives, thermosetting adhesives, and anaerobic adhesives can be used.
  • These adhesives include epoxy resins, acrylic resins, silicone resins, phenol resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, and the like.
  • a material with low moisture permeability such as epoxy resin is preferable.
  • a two-liquid mixed type resin may be used.
  • an adhesive sheet or the like may be used.
  • connection layer 242 an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), or the like can be used.
  • ACF Anisotropic Conductive Film
  • ACP Anisotropic Conductive Paste
  • materials that can be used for conductive layers such as various wirings and electrodes constituting display devices include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, Examples include metals such as tantalum and tungsten, and alloys containing these metals as main components. A film containing these materials can be used as a single layer or as a laminated structure.
  • conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphene can be used.
  • metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials can be used.
  • a nitride of the metal material eg, titanium nitride
  • it is preferably thin enough to have translucency.
  • a stacked film of any of the above materials can be used as the conductive layer.
  • a laminated film of a silver-magnesium alloy and indium tin oxide because the conductivity can be increased.
  • conductive layers such as various wirings and electrodes that constitute a display device, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) of light-emitting elements.
  • Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resins and epoxy resins, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.
  • the display device 100 shown in FIG. 1A is an example in which a stripe arrangement is applied.
  • it is composed of three sub-pixels, R, G, and B sub-pixels.
  • Sub-pixels R, G, and B each have a light-emitting device with a different emission color.
  • sub-pixels R, G, and B can be red, green, and blue sub-pixels, respectively.
  • a pixel 103 shown in FIG. 15A is composed of three sub-pixels R, G, and B sub-pixels.
  • the pixel 103 shown in FIG. 15B includes a subpixel G having a substantially trapezoidal top surface shape with rounded corners, a subpixel R having a substantially triangular top surface shape with rounded corners, and a substantially quadrangular or substantially hexagonal top surface shape with rounded corners. and a sub-pixel B having Further, the sub-pixel G has a larger light-emitting area than the sub-pixel R.
  • the shape and size of each sub-pixel can be determined independently.
  • sub-pixels with more reliable light emitting devices can be smaller in size.
  • the sub-pixel R may be a red sub-pixel
  • the sub-pixel G may be a green sub-pixel
  • the sub-pixel B may be a blue sub-pixel.
  • a delta arrangement is applied to the pixels 125a and 125b shown in FIGS. 15D and 15E.
  • the pixel 125a has two sub-pixels (sub-pixels R and G) in the upper row (first row) and one sub-pixel (sub-pixel B) in the lower row (second row).
  • the pixel 125b has one sub-pixel (sub-pixel B) in the upper row (first row) and two sub-pixels (sub-pixels R and G) in the lower row (second row).
  • FIG. 15D is an example in which each sub-pixel has a substantially square top surface shape with rounded corners
  • FIG. 15E is an example in which each sub-pixel has a circular top surface shape.
  • the top surface shape of the sub-pixel may be a polygonal shape with rounded corners, an elliptical shape, a circular shape, or the like.
  • the EL layer is processed into an island shape using a resist mask.
  • the resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, depending on the heat resistance temperature of the EL layer material and the curing temperature of the resist material, curing of the resist film may be insufficient.
  • a resist film that is insufficiently hardened may take a shape away from the desired shape during processing.
  • the top surface shape of the EL layer may be a polygon with rounded corners, an ellipse, or a circle. For example, when a resist mask having a square top surface is formed, a resist mask having a circular top surface is formed, and the EL layer may have a circular top surface.
  • a technique for correcting the mask pattern in advance so that the design pattern and the transfer pattern match.
  • OPC Optical Proximity Correction
  • a pattern for correction is added to a corner portion of a figure on a mask pattern.
  • a stripe arrangement is applied to the pixels 103 shown in FIGS. 16A to 16C.
  • a pixel 103 shown in FIGS. 16A to 16C is composed of four sub-pixels R, G, B, and W sub-pixels.
  • the sub-pixels R, G, B, and W have light-emitting devices with different emission colors.
  • sub-pixels R, G, B, and W can be red, green, blue, and white sub-pixels, respectively.
  • FIG. 16A is an example in which each sub-pixel has a rectangular top surface shape
  • FIG. 16B is an example in which each sub-pixel has a top surface shape connecting two semicircles and a rectangle
  • FIG. This is an example where the sub-pixel has an elliptical top surface shape.
  • FIG. 16D is an example in which each sub-pixel has a square top surface shape
  • FIG. 16E is an example in which each sub-pixel has a substantially square top surface shape with rounded corners
  • FIG. which have a circular top shape
  • FIG. 16G is an example having sub-pixels R, G, B and three sub-pixels W to which a stripe arrangement is applied.
  • a device manufactured using a metal mask or FMM may be referred to as a device with an MM (metal mask) structure.
  • a device manufactured without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure.
  • light-emitting devices can be broadly classified into single structures and tandem structures.
  • a single-structure device preferably has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers.
  • the light-emitting unit preferably includes one or more light-emitting layers.
  • the luminescent color of the first luminescent layer and the luminescent color of the second luminescent layer have a complementary color relationship, it is possible to obtain a configuration in which the entire light emitting device emits white light.
  • the white light emitting device when comparing the white light emitting device (single structure or tandem structure) and the light emitting device having the SBS structure, the light emitting device having the SBS structure can consume less power than the white light emitting device. When it is desired to keep power consumption low, it is preferable to use a light-emitting device with an SBS structure. On the other hand, the white light emitting device is preferable because the manufacturing process is simpler than that of the SBS structure light emitting device, so that the manufacturing cost can be lowered or the manufacturing yield can be increased.
  • the light emitting device has an EL layer 786 between a pair of electrodes (lower electrode 772, upper electrode 788).
  • EL layer 786 can be composed of multiple layers such as layer 4420 , light-emitting layer 4411 , and layer 4430 .
  • the layer 4420 can have, for example, a layer containing a substance with high electron-injection properties (electron-injection layer) and a layer containing a substance with high electron-transport properties (electron-transporting layer).
  • the light-emitting layer 4411 contains, for example, a light-emitting compound.
  • Layer 4430 can have, for example, a layer containing a substance with high hole-injection properties (hole-injection layer) and a layer containing a substance with high hole-transport properties (hole-transport layer).
  • a structure having a layer 4420, a light-emitting layer 4411, and a layer 4430 provided between a pair of electrodes can function as a single light-emitting unit, and the structure of FIG. 17A is referred to herein as a single structure.
  • FIG. 17B is a modification of the EL layer 786 included in the light emitting device shown in FIG. 17A.
  • the light-emitting device shown in FIG. It has a top layer 4420-1, a layer 4420-2 on layer 4420-1, and a top electrode 788 on layer 4420-2.
  • layer 4430-1 functions as a hole injection layer
  • layer 4430-2 functions as a hole transport layer
  • layer 4420-1 functions as an electron Functioning as a transport layer
  • layer 4420-2 functions as an electron injection layer.
  • layer 4430-1 functions as an electron-injecting layer
  • layer 4430-2 functions as an electron-transporting layer
  • layer 4420-1 functions as a hole-transporting layer.
  • a configuration in which a plurality of light-emitting layers (light-emitting layers 4411, 4412, and 4413) are provided between layers 4420 and 4430 as shown in FIGS. 17C and 17D is also a variation of the single structure.
  • tandem structure a structure in which a plurality of light-emitting units (EL layers 786a and 786b) are connected in series via an intermediate layer (charge generation layer) 4440 is referred to as a tandem structure in this specification. call.
  • the configurations shown in FIGS. 17E and 17F are referred to as tandem structures, but are not limited to this, and for example, the tandem structures may be referred to as stack structures. Note that the tandem structure enables a light-emitting device capable of emitting light with high luminance.
  • light-emitting materials that emit light of the same color may be used for the light-emitting layers 4411, 4412, and 4413.
  • FIG. 17D shows an example in which a colored layer 785 functioning as a color filter is provided. A desired color of light can be obtained by passing the white light through the color filter.
  • the same light-emitting material may be used for the light-emitting layers 4411 and 4412 .
  • light-emitting materials that emit light of different colors may be used for the light-emitting layers 4411 and 4412 .
  • white light emission can be obtained.
  • FIG. 17F shows an example in which a colored layer 785 is further provided.
  • the layer 4420 and the layer 4430 may have a laminated structure consisting of two or more layers as shown in FIG. 17B.
  • a structure that separates the light-emitting layers (here, blue (B), green (G), and red (R)) for each light-emitting device is sometimes called an SBS (Side By Side) structure.
  • the emission color of the light-emitting device can be red, green, blue, cyan, magenta, yellow, white, or the like, depending on the material forming the EL layer 786 . Further, the color purity can be further enhanced by providing the light-emitting device with a microcavity structure.
  • a light-emitting device that emits white light preferably has a structure in which two or more types of light-emitting substances are contained in the light-emitting layer.
  • two or more light-emitting substances may be selected so that the light emission of each light-emitting substance has a complementary color relationship.
  • the emission color of the first light-emitting layer and the emission color of the second light-emitting layer have a complementary color relationship, it is possible to obtain a light-emitting device that emits white light as a whole. The same applies to light-emitting devices having three or more light-emitting layers.
  • the light-emitting layer preferably contains two or more light-emitting substances that emit light such as R (red), G (green), B (blue), Y (yellow), and O (orange).
  • R red
  • G green
  • B blue
  • Y yellow
  • O orange
  • a light-emitting device has at least a light-emitting layer. Further, in the light-emitting device, layers other than the light-emitting layer include a substance with high hole-injection property, a substance with high hole-transport property, a hole-blocking material, a substance with high electron-transport property, an electron-blocking material, and a layer with high electron-injection property. A layer containing a substance, a bipolar substance (a substance with high electron-transport properties and high hole-transport properties), or the like may be further included.
  • Both low-molecular-weight compounds and high-molecular-weight compounds can be used in the light-emitting device, and inorganic compounds may be included.
  • Each of the layers constituting the light-emitting device can be formed by a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.
  • the light-emitting device may have one or more layers selected from a hole-injection layer, a hole-transport layer, a hole-blocking layer, an electron-blocking layer, an electron-transporting layer, and an electron-injecting layer, in addition to the light-emitting layer. can.
  • the hole-injecting layer is a layer that injects holes from the anode into the hole-transporting layer, and contains a material with high hole-injecting properties.
  • highly hole-injecting materials include aromatic amine compounds and composite materials containing a hole-transporting material and an acceptor material (electron-accepting material).
  • the hole-transporting layer is a layer that transports holes injected from the anode to the light-emitting layer by means of the hole-injecting layer.
  • a hole-transporting layer is a layer containing a hole-transporting material.
  • the hole-transporting material a substance having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these can be used as long as they have a higher hole-transport property than electron-transport property.
  • hole-transporting materials include ⁇ -electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.), aromatic amines (compounds having an aromatic amine skeleton), and other highly hole-transporting materials. is preferred.
  • ⁇ -electron-rich heteroaromatic compounds e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.
  • aromatic amines compounds having an aromatic amine skeleton
  • other highly hole-transporting materials is preferred.
  • the electron-transporting layer is a layer that transports electrons injected from the cathode to the light-emitting layer by the electron-injecting layer.
  • the electron-transporting layer is a layer containing an electron-transporting material.
  • an electron-transporting material a substance having an electron mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these substances can be used as long as they have a higher electron-transport property than hole-transport property.
  • electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, ⁇ electron deficient including oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives with quinoline ligands, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other nitrogen-containing heteroaromatic compounds
  • a material having a high electron transport property such as a type heteroaromatic compound can be used.
  • the electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer that contains a material with high electron injection properties.
  • Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection properties.
  • a composite material containing an electron-transporting material and a donor material (electron-donating material) can also be used as a material with high electron-injecting properties.
  • Examples of the electron injection layer include lithium, cesium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF 2 ), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2 -pyridyl)phenoratritium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenoratritium (abbreviation: LiPPP) , lithium oxide (LiO x ), cesium carbonate, etc., alkali metals, alkaline earth metals, or compounds thereof.
  • Liq lithium, cesium, lithium fluoride
  • CsF cesium fluoride
  • CaF 2 calcium fluoride
  • Liq 8-(quinolinolato)lithium
  • LiPP 2-(2 -pyridyl)phenoratritium
  • a material having an electron transport property may be used as the electron injection layer described above.
  • a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material.
  • a compound having at least one of a pyridine ring, diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and triazine ring can be used.
  • the lowest unoccupied molecular orbital (LUMO) of the organic compound having an unshared electron pair is preferably -3.6 eV or more and -2.3 eV or less.
  • CV cyclic voltammetry
  • photoelectron spectroscopy optical absorption spectroscopy
  • inverse photoelectron spectroscopy etc. are used to determine the highest occupied molecular orbital (HOMO) level and LUMO level of an organic compound. can be estimated.
  • BPhen 4,7-diphenyl-1,10-phenanthroline
  • NBPhen 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline
  • HATNA diquinoxalino [2,3-a:2′,3′-c]phenazine
  • TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3 , 5-triazine
  • TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3 , 5-triazine
  • a light-emitting layer is a layer containing a light-emitting substance.
  • the emissive layer can have one or more emissive materials.
  • a substance exhibiting emission colors such as blue, purple, violet, green, yellow-green, yellow, orange, and red is used as appropriate.
  • a substance that emits near-infrared light can be used as the light-emitting substance.
  • Examples of light-emitting substances include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.
  • fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives. be done.
  • Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton, and phenylpyridine derivatives having an electron-withdrawing group.
  • organometallic complexes especially iridium complexes
  • platinum complexes, rare earth metal complexes, etc. which are used as ligands, can be mentioned.
  • the light-emitting layer may contain one or more organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material).
  • One or both of a hole-transporting material and an electron-transporting material can be used as the one or more organic compounds.
  • Bipolar materials or TADF materials may also be used as one or more organic compounds.
  • the light-emitting layer preferably includes, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that easily form an exciplex.
  • ExTET Exciplex-Triplet Energy Transfer
  • a combination that forms an exciplex that emits light that overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting substance energy transfer becomes smooth and light emission can be efficiently obtained. With this configuration, high efficiency, low-voltage driving, and long life of the light-emitting device can be realized at the same time.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • a pixel can have a structure in which a plurality of types of sub-pixels having light-emitting devices emitting different colors are provided.
  • a pixel can be configured to have three types of sub-pixels.
  • the three sub-pixels are red (R), green (G), and blue (B) sub-pixels, and yellow (Y), cyan (C), and magenta (M) sub-pixels. etc.
  • the pixel can be configured to have four types of sub-pixels. Examples of the four sub-pixels include R, G, B, and white (W) sub-pixels, and R, G, B, and Y sub-pixels.
  • the arrangement of sub-pixels includes, for example, a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.
  • top surface shapes of sub-pixels include triangles, quadrilaterals (including rectangles and squares), polygons such as pentagons, shapes with rounded corners of these polygons, ellipses, and circles.
  • the top surface shape of the sub-pixel corresponds to the top surface shape of the light emitting region of the light emitting device.
  • a display device of one embodiment of the present invention may include a light-receiving device in a pixel.
  • a display device having a light-emitting device and a light-receiving device in a pixel, since the pixel has a light-receiving function, it is possible to detect contact or proximity of an object while displaying an image. For example, not only can an image be displayed by all the sub-pixels of the display device, but also some sub-pixels can emit light as a light source and the remaining sub-pixels can be used to display an image.
  • light-emitting devices are arranged in matrix in the display portion, and an image can be displayed on the display portion.
  • light receiving devices are arranged in a matrix in the display section, and the display section has one or both of an imaging function and a sensing function in addition to an image display function.
  • the display part can be used for an image sensor or a touch sensor. That is, by detecting light on the display portion, an image can be captured, or proximity or contact of an object (a finger, hand, pen, or the like) can be detected.
  • the display device of one embodiment of the present invention can use a light-emitting device as a light source of a sensor. Therefore, it is not necessary to provide a light receiving portion and a light source separately from the display device, and the number of parts of the electronic device can be reduced.
  • the light-receiving device when an object reflects (or scatters) light emitted by a light-emitting device included in the display portion, the light-receiving device can detect the reflected light (or scattered light).
  • the reflected light or scattered light.
  • imaging or touch detection is possible.
  • the display device can capture an image using the light receiving device.
  • the display device of this embodiment can be used as a scanner.
  • an image sensor can be used to acquire data related to biometric information such as fingerprints and palm prints. That is, the biometric authentication sensor can be incorporated in the display device.
  • the biometric authentication sensor can be incorporated into the display device.
  • the display device can detect proximity or contact of an object using the light receiving device.
  • a pn-type or pin-type photodiode can be used as the light receiving device.
  • a light-receiving device functions as a photoelectric conversion device (also referred to as a photoelectric conversion element) that detects light incident on the light-receiving device and generates an electric charge. The amount of charge generated from the light receiving device is determined based on the amount of light incident on the light receiving device.
  • organic photodiode having a layer containing an organic compound as the light receiving device.
  • Organic photodiodes can be easily made thinner, lighter, and larger, and have a high degree of freedom in shape and design, so that they can be applied to various display devices.
  • an organic EL device is used as the light emitting device and an organic photodiode is used as the light receiving device.
  • An organic EL device and an organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated in a display device using an organic EL device.
  • the pixels shown in FIGS. 18A and 18B have sub-pixels G, sub-pixels B, sub-pixels R, and sub-pixels PS.
  • a stripe arrangement is applied to the pixels shown in FIG. 18A.
  • a matrix arrangement is applied to the pixels shown in FIG. 18B.
  • the pixels shown in FIGS. 18C and 18D have sub-pixels G, sub-pixels B, sub-pixels R, sub-pixels PS, and sub-pixels IRS.
  • FIGS. 18C and 18D show an example in which one pixel is provided over 2 rows and 3 columns.
  • Three sub-pixels (sub-pixel G, sub-pixel B, and sub-pixel R) are provided in the upper row (first row).
  • three sub-pixels (one sub-pixel PS and two sub-pixels IRS) are provided in the lower row (second row).
  • two sub-pixels are provided in the lower row (second row). Note that the layout of sub-pixels is not limited to the configurations shown in FIGS. 18A to 18D.
  • the sub-pixel R has a light-emitting device that emits red light.
  • Sub-pixel G has a light-emitting device that emits green light.
  • Sub-pixel B has a light-emitting device that emits blue light.
  • the sub-pixel PS and the sub-pixel IRS each have a light receiving device.
  • the wavelength of light detected by the sub-pixels PS and IRS is not particularly limited.
  • the light receiving area of the sub-pixel PS is smaller than the light receiving area of the sub-pixel IRS.
  • the sub-pixels PS can be used to capture images for personal authentication using a fingerprint, palm print, iris, pulse shape (including vein shape and artery shape), face, or the like.
  • the sub-pixel IRS can be used for a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, a hover touch sensor, a non-contact sensor, or a touchless sensor).
  • the sub-pixel IRS can appropriately determine the wavelength of light to be detected according to the application.
  • sub-pixel IRS preferably detects infrared light. This enables touch detection even in dark places.
  • the touch sensor or near-touch sensor can detect the proximity or contact of an object (finger, hand, pen, etc.).
  • a touch sensor can detect an object by direct contact between the display device and the object.
  • the near-touch sensor can detect the object even if the object does not touch the display device.
  • the display device can detect the object when the distance between the display device and the object is 0.1 mm or more and 300 mm or less, preferably 3 mm or more and 50 mm or less.
  • the display device can be operated without direct contact with the object, in other words, the display device can be operated without contact.
  • the risk of staining or scratching the display device can be reduced, or the object can be displayed without directly touching the stain (for example, dust or virus) attached to the display device. It becomes possible to operate the device.
  • the sub-pixels PS are provided in all the pixels included in the display device.
  • the sub-pixels IRS used for touch sensors or near-touch sensors do not require high detection accuracy compared to the sub-pixels PS, so they may be provided in some pixels of the display device.
  • a light receiving device has at least an active layer that functions as a photoelectric conversion layer between a pair of electrodes.
  • one of a pair of electrodes may be referred to as a pixel electrode and the other may be referred to as a common electrode.
  • one electrode functions as an anode and the other electrode functions as a cathode.
  • the pixel electrode functions as an anode and the common electrode functions as a cathode will be described below as an example. That is, the light-receiving device can be driven by applying a reverse bias between the pixel electrode and the common electrode to detect light incident on the light-receiving device, generate charges, and extract them as current.
  • a manufacturing method similar to that for the light-emitting device can also be applied to the light-receiving device.
  • the island-shaped active layer (also called photoelectric conversion layer) of the light receiving device is not formed by a pattern of a metal mask, but is formed by processing after forming a film that will be the active layer over the entire surface. , an island-shaped active layer can be formed with a uniform thickness. Further, by providing the sacrificial layer over the active layer, the damage to the active layer during the manufacturing process of the display device can be reduced, and the reliability of the light receiving device can be improved.
  • a layer shared by the light-receiving device and the light-emitting device may have different functions in the light-emitting device and in the light-receiving device. Components are sometimes referred to herein based on their function in the light emitting device.
  • a hole-injecting layer functions as a hole-injecting layer in light-emitting devices and as a hole-transporting layer in light-receiving devices.
  • an electron-injecting layer functions as an electron-injecting layer in light-emitting devices and as an electron-transporting layer in light-receiving devices.
  • a layer shared by the light-receiving device and the light-emitting device may have the same function in the light-emitting device as in the light-receiving device.
  • a hole-transporting layer functions as a hole-transporting layer in both a light-emitting device and a light-receiving device
  • an electron-transporting layer functions as an electron-transporting layer in both a light-emitting device and a light-receiving device.
  • the active layer of the light receiving device contains a semiconductor.
  • the semiconductor include inorganic semiconductors such as silicon and organic semiconductors including organic compounds.
  • an organic semiconductor is used as the semiconductor included in the active layer.
  • the light-emitting layer and the active layer can be formed by the same method (for example, a vacuum deposition method), and a manufacturing apparatus can be shared, which is preferable.
  • Electron-accepting organic semiconductor materials such as fullerenes (eg, C 60 , C 70 , etc.) and fullerene derivatives can be used as n-type semiconductor materials for the active layer.
  • Fullerenes have a soccer ball-like shape, which is energetically stable.
  • Fullerene has both deep (low) HOMO and LUMO levels. Since fullerene has a deep LUMO level, it has an extremely high electron-accepting property (acceptor property).
  • acceptor property electron-accepting property
  • a high electron-accepting property is useful as a light-receiving device because charge separation occurs quickly and efficiently.
  • Both C 60 and C 70 have broad absorption bands in the visible light region, and C 70 is particularly preferable because it has a larger ⁇ -electron conjugated system than C 60 and has a wide absorption band in the long wavelength region.
  • [6,6]-Phenyl-C71- butylic acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61- butylic acid methyl ester (abbreviation: PC60BM), 1 ',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6] fullerene-C 60 (abbreviation: ICBA) and the like.
  • PC70BM [6,6]-Phenyl-C71- butylic acid methyl ester
  • PC60BM [6,6]-Phenyl-C61- butylic acid methyl ester
  • ICBA 1,6] fullerene-C 60
  • Materials for the n-type semiconductor include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, Oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, quinone derivatives, etc. is mentioned.
  • Materials for the p-type semiconductor of the active layer include copper (II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), and tin phthalocyanine.
  • electron-donating organic semiconductor materials such as (SnPc) and quinacridone;
  • Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton.
  • materials for p-type semiconductors include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives and the like.
  • the HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material.
  • the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.
  • a spherical fullerene as the electron-accepting organic semiconductor material, and use an organic semiconductor material with a shape close to a plane as the electron-donating organic semiconductor material. Molecules with similar shapes tend to gather together, and when molecules of the same type aggregate, the energy levels of the molecular orbitals are close to each other, so the carrier transportability can be enhanced.
  • the active layer is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor.
  • the active layer may be formed by laminating an n-type semiconductor and a p-type semiconductor.
  • the light-receiving device further includes, as layers other than the active layer, a layer containing a highly hole-transporting substance, a highly electron-transporting substance, a bipolar substance (substances having high electron-transporting and hole-transporting properties), or the like. may have.
  • the layer is not limited to the above, and may further include a layer containing a highly hole-injecting substance, a hole-blocking material, a highly electron-injecting material, an electron-blocking material, or the like.
  • Both low-molecular-weight compounds and high-molecular-weight compounds can be used in the light-receiving device, and inorganic compounds may be included.
  • the layers constituting the light-receiving device can be formed by methods such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, and a coating method.
  • hole-transporting materials include polymer compounds such as poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonic acid) (PEDOT/PSS), molybdenum oxide, and copper iodide (CuI).
  • Inorganic compounds such as can be used.
  • an inorganic compound such as zinc oxide (ZnO) can be used as the electron-transporting material.
  • 6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c′]dithiophene-1 ,3-diyl]]polymer (abbreviation: PBDB-T) or a polymer compound such as a PBDB-T derivative can be used.
  • a method of dispersing an acceptor material in PBDB-T or a PBDB-T derivative can be used.
  • three or more kinds of materials may be mixed in the active layer.
  • a third material may be mixed in addition to the n-type semiconductor material and the p-type semiconductor material.
  • the third material may be a low-molecular compound or a high-molecular compound.
  • FIG. 18E shows an example of a pixel circuit of a sub-pixel having a light receiving device
  • FIG. 18F shows an example of a pixel circuit of a sub-pixel having a light emitting device.
  • a pixel circuit PIX1 shown in FIG. 18E has a light receiving device PD, a transistor M11, a transistor M12, a transistor M13, a transistor M14, and a capacitive element C2.
  • a light receiving device PD a transistor M11, a transistor M12, a transistor M13, a transistor M14, and a capacitive element C2.
  • an example using a photodiode is shown as the light receiving device PD.
  • the light receiving device PD has a cathode electrically connected to the wiring V1 and an anode electrically connected to one of the source and drain of the transistor M11.
  • the transistor M11 has its gate electrically connected to the wiring TX, and the other of its source and drain electrically connected to one electrode of the capacitor C2, one of the source and drain of the transistor M12, and the gate of the transistor M13.
  • the transistor M12 has a gate electrically connected to the wiring RES and the other of the source and the drain electrically connected to the wiring V2.
  • One of the source and the drain of the transistor M13 is electrically connected to the wiring V3, and the other of the source and the drain is electrically connected to one of the source and the drain of the transistor M14.
  • the transistor M14 has a gate electrically connected to the wiring SE and the other of the source and the drain electrically connected to the wiring OUT1.
  • a constant potential is supplied to each of the wiring V1, the wiring V2, and the wiring V3.
  • the wiring V2 is supplied with a potential lower than that of the wiring V1.
  • the transistor M12 is controlled by a signal supplied to the wiring RES, and has a function of resetting the potential of the node connected to the gate of the transistor M13 to the potential supplied to the wiring V2.
  • the transistor M11 is controlled by a signal supplied to the wiring TX, and has a function of controlling the timing at which the potential of the node changes according to the current flowing through the light receiving device PD.
  • the transistor M13 functions as an amplifying transistor that outputs according to the potential of the node.
  • the transistor M14 is controlled by a signal supplied to the wiring SE, and functions as a selection transistor for reading an output corresponding to the potential of the node by an external circuit connected to the wiring OUT1.
  • a pixel circuit PIX2 shown in FIG. 18F has a light emitting device EL, a transistor M15, a transistor M16, a transistor M17, and a capacitive element C3.
  • a light emitting device EL an example using a light-emitting diode is shown as the light-emitting device EL.
  • an organic EL element it is preferable to use an organic EL element as the light emitting device EL.
  • the transistor M15 has a gate electrically connected to the wiring VG, one of the source and the drain electrically connected to the wiring VS, and the other of the source and the drain being connected to one electrode of the capacitor C3 and the gate of the transistor M16.
  • electrically connected to the One of the source and drain of the transistor M16 is electrically connected to the wiring V4, and the other is electrically connected to the anode of the light emitting device EL and one of the source and drain of the transistor M17.
  • the transistor M17 has a gate electrically connected to the wiring MS and the other of the source and the drain electrically connected to the wiring OUT2.
  • a cathode of the light emitting device EL is electrically connected to the wiring V5.
  • a constant potential is supplied to each of the wiring V4 and the wiring V5.
  • the anode side of the light emitting device EL can be at a higher potential and the cathode side can be at a lower potential than the anode side.
  • the transistor M15 is controlled by a signal supplied to the wiring VG and functions as a selection transistor for controlling the selection state of the pixel circuit PIX2.
  • the transistor M16 functions as a driving transistor that controls the current flowing through the light emitting device EL according to the potential supplied to its gate. When the transistor M15 is on, the potential supplied to the wiring VS is supplied to the gate of the transistor M16, and the light emission luminance of the light emitting device EL can be controlled according to the potential.
  • the transistor M17 is controlled by a signal supplied to the wiring MS, and has a function of outputting the potential between the transistor M16 and the light emitting device EL to the outside through the wiring OUT2.
  • an image may be displayed by causing the light-emitting element to emit light in pulses.
  • the light-emitting element By shortening the driving time of the light-emitting element, power consumption of the display panel and heat generation can be suppressed.
  • an organic EL element is suitable because of its excellent frequency characteristics.
  • the frequency can be, for example, 1 kHz or more and 100 MHz or less.
  • transistor M11 the transistor M12, the transistor M13, and the transistor M14 included in the pixel circuit PIX1
  • metal is added to semiconductor layers in which channels are formed.
  • a transistor including an oxide (oxide semiconductor) is preferably used.
  • a transistor that uses metal oxide which has a wider bandgap than silicon and a lower carrier density, can achieve extremely low off-current. Therefore, the small off-state current can hold charge accumulated in the capacitor connected in series with the transistor for a long time. Therefore, transistors including an oxide semiconductor are preferably used particularly for the transistor M11, the transistor M12, and the transistor M15 which are connected in series to the capacitor C2 or the capacitor C3. Further, by using a transistor including an oxide semiconductor for other transistors, the manufacturing cost can be reduced.
  • transistors in which silicon is used as a semiconductor in which a channel is formed can be used for the transistors M11 to M17.
  • highly crystalline silicon such as single crystal silicon or polycrystalline silicon because high field-effect mobility can be achieved and high-speed operation is possible.
  • At least one of the transistors M11 to M17 may be formed using an oxide semiconductor, and the rest may be formed using silicon.
  • transistors are shown as n-channel transistors in FIGS. 18E and 18F, p-channel transistors can also be used.
  • the transistors included in the pixel circuit PIX1 and the transistors included in the pixel circuit PIX2 are preferably formed side by side on the same substrate. In particular, it is preferable that the transistors included in the pixel circuit PIX1 and the transistors included in the pixel circuit PIX2 are mixed in one region and periodically arranged.
  • each pixel circuit it is preferable to provide one or a plurality of layers having one or both of a transistor and a capacitive element at positions overlapping with the light receiving device PD or the light emitting device EL.
  • the effective area occupied by each pixel circuit can be reduced, and a high-definition light receiving section or display section can be realized.
  • the display device of the present embodiment can add two functions in addition to the display function by mounting two types of light receiving devices in one pixel. Functionalization becomes possible. For example, it is possible to realize a high-definition imaging function and a sensing function such as a touch sensor or a near-touch sensor. In addition, by combining a pixel equipped with two types of light receiving devices and a pixel with another configuration, the functions of the display device can be further increased. For example, a light-emitting device that emits infrared light, or a pixel having various sensor devices can be used.
  • Display panel configuration example Wearable electronic devices for VR, AR, etc. can provide 3D images by using parallax. In that case, it is necessary to display the image for the right eye in the field of view of the right eye and the image for the left eye in the field of view of the left eye, respectively.
  • the shape of the display portion of the display device may be a horizontally long rectangular shape, but the pixels provided outside the field of view of the right eye and the left eye do not contribute to the display, so the pixels always display black. It will happen.
  • the display portion of the display panel is divided into two regions for the right eye and the left eye, and pixels are not arranged in the outer region that does not contribute to display.
  • power consumption required for pixel writing can be reduced.
  • the load on the source line, the gate line, and the like is reduced, display with a high frame rate is possible. As a result, a smooth moving image can be displayed, and a sense of reality can be enhanced.
  • FIG. 19A shows a configuration example of the display panel.
  • a left eye display section 702L and a right eye display section 702R are arranged inside the substrate 701.
  • a driver circuit, wiring, an IC, an FPC, and the like may be arranged on the substrate 701.
  • FIG. 19A shows a configuration example of the display panel.
  • a driver circuit, wiring, an IC, an FPC, and the like may be arranged on the substrate 701.
  • a display section 702L and a display section 702R shown in FIG. 19A have a square top surface shape.
  • the top surface shape of the display portion 702L and the display portion 702R may be other regular polygons.
  • 19B shows an example of a regular hexagon
  • FIG. 19C shows an example of a regular octagon
  • FIG. 19D shows an example of a regular decagon
  • FIG. An example of a rectangular shape is shown.
  • Polygons other than regular polygons may also be used.
  • a regular polygon with rounded corners or a polygon may also be used.
  • the straight line portion of the outline of each display section may not be a straight line, and there may be a stepped portion.
  • a linear portion that is not parallel to the pixel arrangement direction has a stepped top surface shape.
  • the user views the image without visually recognizing the shape of the pixels, even if the oblique outline of the display section is strictly stepped, it can be regarded as a straight line.
  • the curved portion of the outline of the display section is strictly stepped, it can be regarded as a curved line.
  • FIG. 19F shows an example in which the upper surface shape of the display section 702L and the display section 702R is circular.
  • the upper surface shapes of the display section 702L and the display section 702R may be bilaterally asymmetric. Also, they do not have to be regular polygons.
  • FIG. 19G shows an example in which the upper surface shape of the display section 702L and the display section 702R is a left-right asymmetrical octagon.
  • FIG. 19H shows an example of a regular heptagon. In this way, even when the upper surface shapes of the display portions 702L and 702R are asymmetrical, it is preferable that the display portions 702L and 702R are arranged symmetrically. As a result, it is possible to provide an image that does not give a sense of discomfort.
  • FIG. 19I is an example in which the two circular display parts in FIG. 19F are connected.
  • FIG. 19J is an example in which the two regular octagonal display portions in FIG. 19C are connected.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • a metal oxide used for an OS transistor preferably contains at least indium or zinc, and more preferably contains indium and zinc.
  • metal oxides include indium and M (where M is gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium). , hafnium, tantalum, tungsten, magnesium, and cobalt) and zinc.
  • M is preferably one or more selected from gallium, aluminum, yttrium and tin, more preferably gallium.
  • the metal oxide is formed by chemical vapor deposition (CVD) such as sputtering, metal organic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD). It can be formed by a layer deposition method or the like.
  • CVD chemical vapor deposition
  • MOCVD metal organic chemical vapor deposition
  • ALD atomic layer deposition
  • oxides containing indium (In), gallium (Ga), and zinc (Zn) will be described as examples of metal oxides. Note that an oxide containing indium (In), gallium (Ga), and zinc (Zn) is sometimes called an In--Ga--Zn oxide.
  • Crystal structures of oxide semiconductors include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and polycrystal. (poly crystal) and the like.
  • the crystal structure of the film or substrate can be evaluated using an X-ray diffraction (XRD) spectrum.
  • XRD X-ray diffraction
  • it can be evaluated using an XRD spectrum obtained by GIXD (Grazing-Incidence XRD) measurement.
  • GIXD Gram-Incidence XRD
  • the GIXD method is also called a thin film method or a Seemann-Bohlin method.
  • the XRD spectrum obtained by the GIXD measurement may be simply referred to as the XRD spectrum.
  • the shape of the peak of the XRD spectrum is almost bilaterally symmetrical.
  • the shape of the peak of the XRD spectrum is left-right asymmetric.
  • the asymmetric shape of the peaks in the XRD spectra demonstrates the presence of crystals in the film or substrate. In other words, the film or substrate cannot be said to be in an amorphous state unless the shape of the peaks in the XRD spectrum is symmetrical.
  • the crystal structure of the film or substrate can be evaluated by a diffraction pattern (also referred to as a nano beam electron diffraction pattern) observed by nano beam electron diffraction (NBED).
  • a diffraction pattern also referred to as a nano beam electron diffraction pattern
  • NBED nano beam electron diffraction
  • a halo is observed in the diffraction pattern of a quartz glass substrate, and it can be confirmed that the quartz glass is in an amorphous state.
  • a spot-like pattern is observed instead of a halo. Therefore, it cannot be concluded that the In--Ga--Zn oxide film formed at room temperature is in an intermediate state, neither single crystal nor polycrystal, nor amorphous state, and is in an amorphous state. Presumed.
  • oxide semiconductors may be classified differently from the above when their structures are focused. For example, oxide semiconductors are classified into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the above CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, amorphous-like oxide semiconductors (a-like OS), amorphous oxide semiconductors, and the like.
  • CAAC-OS is an oxide semiconductor that includes a plurality of crystal regions, and the c-axes of the plurality of crystal regions are oriented in a specific direction. Note that the specific direction is the thickness direction of the CAAC-OS film, the normal direction to the formation surface of the CAAC-OS film, or the normal direction to the surface of the CAAC-OS film.
  • a crystalline region is a region having periodicity in atomic arrangement. If the atomic arrangement is regarded as a lattice arrangement, the crystalline region is also a region with a uniform lattice arrangement.
  • CAAC-OS has a region where a plurality of crystal regions are connected in the a-b plane direction, and the region may have strain.
  • the strain refers to a portion where the orientation of the lattice arrangement changes between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement in a region where a plurality of crystal regions are connected. That is, CAAC-OS is an oxide semiconductor that is c-axis oriented and has no obvious orientation in the ab plane direction.
  • each of the plurality of crystal regions is composed of one or more microcrystals (crystals having a maximum diameter of less than 10 nm).
  • the maximum diameter of the crystalline region is less than 10 nm.
  • the size of the crystal region may be about several tens of nanometers.
  • the CAAC-OS includes a layer containing indium (In) and oxygen (hereinafter referred to as an In layer) and a layer containing gallium (Ga), zinc (Zn), and oxygen (
  • In layer a layer containing indium (In) and oxygen
  • Ga gallium
  • Zn zinc
  • oxygen oxygen
  • it tends to have a layered crystal structure (also referred to as a layered structure) in which (Ga, Zn) layers are laminated.
  • the (Ga, Zn) layer may contain indium.
  • the In layer may contain gallium.
  • the In layer may contain zinc.
  • the layered structure is observed as a lattice image in, for example, a high-resolution TEM (Transmission Electron Microscope) image.
  • a plurality of bright points are observed in the electron beam diffraction pattern of the CAAC-OS film.
  • a certain spot and another spot are observed at point-symmetrical positions with respect to the spot of the incident electron beam that has passed through the sample (also referred to as a direct spot) as the center of symmetry.
  • the lattice arrangement in the crystal region is basically a hexagonal lattice, but the unit cell is not always a regular hexagon and may be a non-regular hexagon. Moreover, the distortion may have a lattice arrangement such as a pentagon or a heptagon.
  • the distortion of the lattice arrangement suppresses the formation of grain boundaries. This is because the CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the ab plane direction, the bond distance between atoms changes due to the substitution of metal atoms, and the like. It is considered to be for
  • a crystal structure in which clear grain boundaries are confirmed is called a polycrystal.
  • a grain boundary becomes a recombination center, traps carriers, and is highly likely to cause a decrease in on-current of a transistor, a decrease in field-effect mobility, and the like. Therefore, a CAAC-OS in which no clear grain boundaries are observed is one of crystalline oxides having a crystal structure suitable for a semiconductor layer of a transistor.
  • a structure containing Zn is preferable for forming a CAAC-OS.
  • In--Zn oxide and In--Ga--Zn oxide are preferable because they can suppress the generation of grain boundaries more than In oxide.
  • CAAC-OS is an oxide semiconductor with high crystallinity and no clear crystal grain boundaries. Therefore, it can be said that the decrease in electron mobility due to grain boundaries is less likely to occur in CAAC-OS.
  • a CAAC-OS can be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Therefore, an oxide semiconductor including CAAC-OS has stable physical properties. Therefore, an oxide semiconductor including CAAC-OS is resistant to heat and has high reliability.
  • CAAC-OS is also stable against high temperatures (so-called thermal budget) in the manufacturing process. Therefore, the use of the CAAC-OS for the OS transistor makes it possible to increase the degree of freedom in the manufacturing process.
  • nc-OS has periodic atomic arrangement in a minute region (eg, a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm).
  • the nc-OS has minute crystals.
  • the size of the minute crystal is, for example, 1 nm or more and 10 nm or less, particularly 1 nm or more and 3 nm or less, the minute crystal is also called a nanocrystal.
  • nc-OS does not show regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed in the entire film.
  • an nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor depending on the analysis method.
  • an nc-OS film is subjected to structural analysis using an XRD apparatus, out-of-plane XRD measurement using ⁇ /2 ⁇ scanning does not detect a peak indicating crystallinity.
  • an nc-OS film is subjected to electron beam diffraction (also referred to as selected area electron beam diffraction) using an electron beam with a probe diameter larger than that of nanocrystals (for example, 50 nm or more), a diffraction pattern such as a halo pattern is obtained. is observed.
  • an nc-OS film is subjected to electron diffraction (also referred to as nanobeam electron diffraction) using an electron beam with a probe diameter close to or smaller than the size of a nanocrystal (for example, 1 nm or more and 30 nm or less)
  • an electron beam diffraction pattern is obtained in which a plurality of spots are observed within a ring-shaped area centered on the direct spot.
  • An a-like OS is an oxide semiconductor having a structure between an nc-OS and an amorphous oxide semiconductor.
  • An a-like OS has void or low density regions. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS. In addition, the a-like OS has a higher hydrogen concentration in the film than the nc-OS and the CAAC-OS.
  • CAC-OS relates to material composition.
  • CAC-OS is, for example, one structure of a material in which elements constituting a metal oxide are unevenly distributed with a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or in the vicinity thereof.
  • the metal oxide one or more metal elements are unevenly distributed, and the region having the metal element has a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or a size in the vicinity thereof.
  • the mixed state is also called mosaic or patch.
  • CAC-OS is a structure in which the material is separated into a first region and a second region to form a mosaic shape, and the first region is distributed in the film (hereinafter, also referred to as a cloud shape). ). That is, CAC-OS is a composite metal oxide in which the first region and the second region are mixed.
  • the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in the In--Ga--Zn oxide are denoted by [In], [Ga], and [Zn], respectively.
  • the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film.
  • the second region is a region where [Ga] is greater than [Ga] in the composition of the CAC-OS film.
  • the first region is a region in which [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region.
  • the second region is a region in which [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.
  • the first region is a region whose main component is indium oxide, indium zinc oxide, or the like.
  • the second region is a region containing gallium oxide, gallium zinc oxide, or the like as a main component. That is, the first region can be rephrased as a region containing In as a main component. Also, the second region can be rephrased as a region containing Ga as a main component.
  • a clear boundary between the first region and the second region may not be observed.
  • the CAC-OS in the In—Ga—Zn oxide means a region containing Ga as a main component and a region containing In as a main component in a material structure containing In, Ga, Zn, and O. Each region is a mosaic, and refers to a configuration in which these regions exist randomly. Therefore, CAC-OS is presumed to have a structure in which metal elements are unevenly distributed.
  • a CAC-OS can be formed, for example, by a sputtering method under the condition that the substrate is not intentionally heated.
  • a sputtering method one or more selected from an inert gas (typically argon), an oxygen gas, and a nitrogen gas may be used as a deposition gas. good.
  • the flow rate ratio of the oxygen gas to the total flow rate of the film forming gas during film formation is preferably as low as possible.
  • the flow ratio of the oxygen gas to the total flow rate of the film forming gas during film formation is 0% or more and less than 30%, preferably 0% or more and 10% or less.
  • an EDX mapping obtained using energy dispersive X-ray spectroscopy shows that a region containing In as a main component It can be confirmed that the (first region) and the region (second region) containing Ga as the main component are unevenly distributed and have a mixed structure.
  • the first region is a region with higher conductivity than the second region. That is, when carriers flow through the first region, conductivity as a metal oxide is developed. Therefore, by distributing the first region in the form of a cloud in the metal oxide, a high field effect mobility ( ⁇ ) can be realized.
  • the second region is a region with higher insulation than the first region.
  • the leakage current can be suppressed by distributing the second region in the metal oxide.
  • CAC-OS when used for a transistor, the conductivity caused by the first region and the insulation caused by the second region act in a complementary manner to provide a switching function (turning ON/OFF). functions) can be given to the CAC-OS.
  • a part of the material has a conductive function
  • a part of the material has an insulating function
  • the whole material has a semiconductor function.
  • CAC-OS is most suitable for various semiconductor devices including display devices.
  • Oxide semiconductors have a variety of structures, each with different characteristics.
  • An oxide semiconductor of one embodiment of the present invention includes two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, a CAC-OS, an nc-OS, and a CAAC-OS. may
  • an oxide semiconductor with low carrier concentration is preferably used for a transistor.
  • the carrier concentration of the oxide semiconductor is 1 ⁇ 10 17 cm ⁇ 3 or less, preferably 1 ⁇ 10 15 cm ⁇ 3 or less, more preferably 1 ⁇ 10 13 cm ⁇ 3 or less, more preferably 1 ⁇ 10 11 cm ⁇ 3 or less. 3 or less, more preferably less than 1 ⁇ 10 10 cm ⁇ 3 and 1 ⁇ 10 ⁇ 9 cm ⁇ 3 or more.
  • the impurity concentration in the oxide semiconductor film may be lowered to lower the defect level density.
  • a low impurity concentration and a low defect level density are referred to as high-purity intrinsic or substantially high-purity intrinsic.
  • an oxide semiconductor with a low carrier concentration is sometimes referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor.
  • the trap level density may also be low.
  • the charge trapped in the trap level of the oxide semiconductor takes a long time to disappear, and may behave as if it were a fixed charge. Therefore, a transistor whose channel formation region is formed in an oxide semiconductor with a high trap level density might have unstable electrical characteristics.
  • Impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon, and the like.
  • the impurities in the oxide semiconductor refer to, for example, substances other than the main components of the oxide semiconductor. For example, an element whose concentration is less than 0.1 atomic percent can be said to be an impurity.
  • the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon in the vicinity of the interface with the oxide semiconductor are 2 ⁇ 10 18 atoms/cm 3 or less, preferably 2 ⁇ 10 17 atoms/cm 3 or less.
  • the concentration of alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS is set to 1 ⁇ 10 18 atoms/cm 3 or less, preferably 2 ⁇ 10 16 atoms/cm 3 or less.
  • the nitrogen concentration in the oxide semiconductor obtained by SIMS is less than 5 ⁇ 10 19 atoms/cm 3 , preferably 5 ⁇ 10 18 atoms/cm 3 or less, more preferably 1 ⁇ 10 18 atoms/cm 3 or less. , more preferably 5 ⁇ 10 17 atoms/cm 3 or less.
  • the oxide semiconductor reacts with oxygen that bonds to a metal atom to form water, which may cause oxygen vacancies.
  • oxygen vacancies When hydrogen enters the oxygen vacancies, electrons, which are carriers, may be generated.
  • part of hydrogen may bond with oxygen that bonds with a metal atom to generate an electron, which is a carrier. Therefore, a transistor including an oxide semiconductor containing hydrogen is likely to have normally-on characteristics. Therefore, hydrogen in the oxide semiconductor is preferably reduced as much as possible.
  • the hydrogen concentration in the oxide semiconductor obtained by SIMS is less than 1 ⁇ 10 20 atoms/cm 3 , preferably less than 1 ⁇ 10 19 atoms/cm 3 , more preferably less than 5 ⁇ 10 18 atoms/cm. Less than 3 , more preferably less than 1 ⁇ 10 18 atoms/cm 3 .
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • An electronic device of this embodiment includes a display device of one embodiment of the present invention.
  • the display device of one embodiment of the present invention can easily have high definition, high resolution, and large size. Therefore, the display device of one embodiment of the present invention can be used for display portions of various electronic devices.
  • the display device of one embodiment of the present invention can be manufactured at low cost, the manufacturing cost of the electronic device can be reduced.
  • Examples of electronic devices include televisions, desktop or notebook personal computers, monitors for computers, digital signage, large game machines such as pachinko machines, and other electronic devices with relatively large screens. Examples include cameras, digital video cameras, digital photo frames, mobile phones, mobile game machines, mobile information terminals, and sound reproducing devices.
  • the display device of one embodiment of the present invention can have high definition, it can be suitably used for an electronic device having a relatively small display portion.
  • electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), VR devices such as head-mounted displays, and glasses-type AR devices that can be worn on the head. equipment and the like.
  • Wearable devices also include devices for SR (Substitutional Reality) and devices for MR (Mixed Reality).
  • the electronic device of this embodiment can be incorporated along the inner or outer wall of a house or building, or along the curved surface of the interior or exterior of an automobile.
  • the electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, number of revolutions, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage , power, radiation, flow, humidity, gradient, vibration, odor or infrared sensing, detection or measurement).
  • the electronic device of this embodiment can have various functions. For example, functions to display various information (still images, moving images, text images, etc.) on the display, touch panel functions, functions to display calendars, dates or times, functions to execute various software (programs), wireless communication function, a function of reading a program or data recorded on a recording medium, and the like.
  • An electronic device 6500 shown in FIG. 20A is a mobile information terminal that can be used as a smartphone.
  • the electronic device 6500 has a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like.
  • a display portion 6502 has a touch panel function.
  • the display device of one embodiment of the present invention can be applied to the display portion 6502 .
  • FIG. 20B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.
  • a light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, and a printer are placed in a space surrounded by the housing 6501 and the protective member 6510.
  • a substrate 6517, a battery 6518, and the like are arranged.
  • a display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 with an adhesive layer (not shown).
  • a portion of the display panel 6511 is folded back in a region outside the display portion 6502, and the FPC 6515 is connected to the folded portion.
  • An IC6516 is mounted on the FPC6515.
  • the FPC 6515 is connected to terminals provided on the printed circuit board 6517 .
  • a flexible display (flexible display device) of one embodiment of the present invention can be applied to the display panel 6511 . Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, the thickness of the electronic device can be reduced and the large-capacity battery 6518 can be mounted. In addition, by folding back part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.
  • FIG. 21A An example of a television device is shown in FIG. 21A.
  • a television set 7100 has a display portion 7000 incorporated in a housing 7101 .
  • a configuration in which a housing 7101 is supported by a stand 7103 is shown.
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 .
  • the television device 7100 is configured to include a receiver, a modem, and the like.
  • the receiver can receive general television broadcasts. Also, by connecting to a wired or wireless communication network via a modem, one-way (from the sender to the receiver) or two-way (between the sender and the receiver, or between the receivers, etc.) information communication is performed. is also possible.
  • FIG. 21B shows an example of a notebook personal computer.
  • a notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like.
  • the display portion 7000 is incorporated in the housing 7211 .
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 .
  • FIGS. 21C and 21D An example of digital signage is shown in FIGS. 21C and 21D.
  • a digital signage 7300 shown in FIG. 21C includes a housing 7301, a display unit 7000, speakers 7303, and the like. Furthermore, it can have an LED lamp, an operation key (including a power switch or an operation switch), connection terminals, various sensors, a microphone, and the like.
  • FIG. 21D shows a digital signage 7400 attached to a cylindrical post 7401.
  • FIG. A digital signage 7400 has a display section 7000 provided along the curved surface of a pillar 7401 .
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 in FIGS. 21C and 21D.
  • the wider the display unit 7000 the more information can be provided at once.
  • the wider the display unit 7000 the more conspicuous it is, and the more effective the advertisement can be, for example.
  • a touch panel By applying a touch panel to the display unit 7000, not only can images or moving images be displayed on the display unit 7000, but also the user can intuitively operate the display unit 7000, which is preferable. Further, when used for providing information such as route information or traffic information, usability can be enhanced by intuitive operation.
  • the digital signage 7300 or digital signage 7400 is preferably capable of cooperating with an information terminal 7311 or information terminal 7411 such as a smartphone possessed by the user through wireless communication.
  • advertisement information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411 .
  • display on the display portion 7000 can be switched.
  • FIG. 22A is a diagram showing the appearance of the camera 8000 with the finder 8100 attached.
  • a camera 8000 has a housing 8001, a display unit 8002, an operation button 8003, a shutter button 8004, and the like.
  • a detachable lens 8006 is attached to the camera 8000 .
  • lens 8006 and housing 8001 may be integrated.
  • the camera 8000 can capture an image by pressing the shutter button 8004 or by touching the display unit 8002 that functions as a touch panel.
  • the viewfinder 8100 has a housing 8101, a display section 8102, buttons 8103, and the like.
  • the housing 8101 is attached to the camera 8000 by mounts that engage the mounts of the camera 8000 .
  • a viewfinder 8100 can display an image or the like received from the camera 8000 on a display portion 8102 .
  • the button 8103 has a function as a power button or the like.
  • the display device of one embodiment of the present invention can be applied to the display portion 8002 of the camera 8000 and the display portion 8102 of the viewfinder 8100 .
  • the camera 8000 having a built-in finder may also be used.
  • FIG. 22B is a diagram showing the appearance of the head mounted display 8200.
  • FIG. 22B is a diagram showing the appearance of the head mounted display 8200.
  • a cable 8205 supplies power from a battery 8206 to the main body 8203 .
  • a main body 8203 includes a wireless receiver or the like, and can display received video information on a display portion 8204 .
  • the main body 8203 is equipped with a camera, and information on the movement of the user's eyeballs or eyelids can be used as input means.
  • the mounting section 8201 may be provided with a plurality of electrodes capable of detecting a current flowing along with the movement of the user's eyeballs at a position where it touches the user, and may have a function of recognizing the line of sight. Moreover, it may have a function of monitoring the user's pulse based on the current flowing through the electrode.
  • the mounting unit 8201 may have various sensors such as a temperature sensor, a pressure sensor, an acceleration sensor, etc., and has a function of displaying biological information of the user on the display unit 8204, In addition, a function of changing an image displayed on the display portion 8204 may be provided.
  • the display device of one embodiment of the present invention can be applied to the display portion 8204 .
  • FIG. 22C to 22E are diagrams showing the appearance of the head mounted display 8300.
  • FIG. A head mounted display 8300 includes a housing 8301 , a display portion 8302 , a band-shaped fixture 8304 , and a pair of lenses 8305 .
  • the user can visually recognize the display on the display unit 8302 through the lens 8305 .
  • the display portion 8302 it is preferable to arrange the display portion 8302 in a curved manner because the user can feel a high presence.
  • three-dimensional display or the like using parallax can be performed.
  • the configuration is not limited to the configuration in which one display portion 8302 is provided, and two display portions 8302 may be provided and one display portion may be arranged for one eye of the user.
  • the display device of one embodiment of the present invention can be applied to the display portion 8302 .
  • the display device of one embodiment of the present invention can also achieve extremely high definition. For example, even when the display is magnified using the lens 8305 as shown in FIG. 22E and visually recognized, the pixels are difficult for the user to visually recognize. In other words, the display portion 8302 can be used to allow the user to view highly realistic images.
  • FIG. 22F is a diagram showing the appearance of a goggle-type head mounted display 8400.
  • the head mounted display 8400 has a pair of housings 8401, a mounting section 8402, and a cushioning member 8403.
  • a display portion 8404 and a lens 8405 are provided in the pair of housings 8401, respectively.
  • the user can visually recognize the display unit 8404 through the lens 8405.
  • the lens 8405 has a focus adjustment mechanism, and the focus adjustment mechanism can adjust the position of the lens 8405 according to the user's visual acuity.
  • the display portion 8404 is preferably square or horizontally long rectangular. This makes it possible to enhance the sense of reality.
  • the mounting part 8402 preferably has plasticity and elasticity so that it can be adjusted according to the size of the user's face and does not slip off.
  • a part of the mounting portion 8402 preferably has a vibration mechanism that functions as a bone conduction earphone. As a result, you can enjoy video and audio without the need for separate audio equipment such as earphones and speakers.
  • the housing 8401 may have a function of outputting audio data by wireless communication.
  • the mounting part 8402 and the cushioning member 8403 are parts that come into contact with the user's face (forehead, cheeks, etc.). Since the cushioning member 8403 is in close contact with the user's face, it is possible to prevent light leakage and enhance the sense of immersion. It is preferable to use a soft material for the cushioning member 8403 so that the cushioning member 8403 comes into close contact with the user's face when the head mounted display 8400 is worn by the user. For example, materials such as rubber, silicone rubber, urethane, and sponge can be used.
  • a member that touches the user's skin is preferably detachable for easy cleaning or replacement.
  • the electronic device shown in FIGS. 23A to 23F includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006, sensors 9007 (force, displacement, position, speed). , acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared rays , detection or measurement), a microphone 9008, and the like.
  • the electronic devices shown in FIGS. 23A to 23F have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a calendar, a function to display the date or time, a function to control processing by various software (programs), It can have a wireless communication function, a function of reading and processing programs or data recorded on a recording medium, and the like. Note that the functions of the electronic device are not limited to these, and can have various functions.
  • the electronic device may have a plurality of display units.
  • the electronic device is equipped with a camera, etc., and has the function of capturing still images or moving images and storing them in a recording medium (external or built into the camera), or the function of displaying the captured image on the display unit, etc. good.
  • the display device of one embodiment of the present invention can be applied to the display portion 9001 .
  • FIG. 23A is a perspective view showing a mobile information terminal 9101.
  • the mobile information terminal 9101 can be used as a smart phone, for example.
  • the portable information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like.
  • the mobile information terminal 9101 can display text and image information on its multiple surfaces.
  • FIG. 23A shows an example in which three icons 9050 are displayed.
  • Information 9051 indicated by a dashed rectangle can also be displayed on another surface of the display portion 9001 . Examples of the information 9051 include notification of incoming e-mail, SNS, telephone, etc., title of e-mail, SNS, etc., sender name, date and time, remaining battery power, strength of antenna reception, and the like.
  • an icon 9050 or the like may be displayed at the position where the information 9051 is displayed.
  • FIG. 23B is a perspective view showing the mobile information terminal 9102.
  • the portable information terminal 9102 has a function of displaying information on three or more sides of the display portion 9001 .
  • information 9052, information 9053, and information 9054 are displayed on different surfaces.
  • the user can confirm the information 9053 displayed at a position where the mobile information terminal 9102 can be viewed from above the mobile information terminal 9102 while the mobile information terminal 9102 is stored in the chest pocket of the clothes.
  • the user can check the display without taking out the portable information terminal 9102 from the pocket, and can determine, for example, whether to receive a call.
  • FIG. 23C is a perspective view showing a wristwatch-type mobile information terminal 9200.
  • the mobile information terminal 9200 can be used as a smart watch (registered trademark), for example.
  • the display portion 9001 has a curved display surface, and display can be performed along the curved display surface.
  • Hands-free communication is also possible by allowing the mobile information terminal 9200 to communicate with, for example, a headset capable of wireless communication.
  • the portable information terminal 9200 can transmit data to and from another information terminal through the connection terminal 9006, and can be charged. Note that the charging operation may be performed by wireless power supply.
  • FIG. 23D to 23F are perspective views showing a foldable personal digital assistant 9201.
  • FIG. 23D is a perspective view of the portable information terminal 9201 in an unfolded state
  • FIG. 23F is a folded state
  • FIG. 23E is a perspective view of a state in the middle of changing from one of FIGS. 23D and 23F to the other.
  • the portable information terminal 9201 has excellent portability in the folded state, and has excellent display visibility due to a seamless wide display area in the unfolded state.
  • a display portion 9001 included in the portable information terminal 9201 is supported by three housings 9000 connected by hinges 9055 .
  • the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • FIG. 24 is a diagram showing the relationship between product screen size and pixel density.
  • the horizontal axis is the screen size (inch), and the vertical axis is the pixel density (ppi).
  • typical screen sizes for products such as ⁇ OLEDs, smartphones, watch-type devices, notebook PCs, tablet terminals, in-vehicle displays, monitor devices, and television devices (TVs) used in AR products or VR products and the range of pixel densities.
  • TVs television devices
  • FIG. 24 shows side by side the technologies that can be applied to each product.
  • BP denotes backplane
  • FP denotes frontplane.
  • the full-color OLED technology can be broadly divided into separate coating technology using fine metal masks (FMM + SBS), separate coating technology using printing methods such as inkjet (printing + SBS), and a combination of white OLED and color filters.
  • FMM + SBS fine metal masks
  • printing methods such as inkjet (printing + SBS)
  • W+CF technology
  • B+Qd technology that combines blue OLED and quantum dots.
  • OLED organic light emitting diode
  • tandem structure in which a plurality of light emitting units are stacked and a single structure in which light emitting units are not stacked.
  • Backplane manufacturing technologies include LSI technology using Si substrates, LTPS (Low Temperature Poly Silicon) technology, LTPO (Low Temperature Poly Silicon and Oxide) technology, and OS (Oxide Semiconductor) technology.
  • MML Metal Mask Less
  • the MML technology is a technology capable of realizing high aperture ratio, high efficiency, high brightness, high display quality, high contrast, and high reliability as compared with the full-color technology described above.
  • the MML technology can be applied to display devices of all screen sizes and resolutions shown in FIG. In particular, it can be suitably used for a microdisplay whose screen size is about 1 inch and whose resolution exceeds 1000 ppi.
  • HMML Hybrid MML
  • the HMML technology can replace the conventional FMM+SBS full-color technology, and is a technology capable of achieving a higher aperture ratio, higher reliability, higher display quality, and higher contrast.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.

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CN202280019162.2A CN117083984A (zh) 2021-03-11 2022-03-04 显示装置以及显示装置的制造方法
KR1020237030327A KR102934079B1 (ko) 2021-03-11 2022-03-04 표시 장치 및 표시 장치의 제작 방법
US18/549,205 US20240172487A1 (en) 2021-03-11 2022-03-04 Display apparatus and manufacturing method of the display apparatus
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