WO2022189884A1 - 表示装置、電子機器 - Google Patents

表示装置、電子機器 Download PDF

Info

Publication number
WO2022189884A1
WO2022189884A1 PCT/IB2022/051720 IB2022051720W WO2022189884A1 WO 2022189884 A1 WO2022189884 A1 WO 2022189884A1 IB 2022051720 W IB2022051720 W IB 2022051720W WO 2022189884 A1 WO2022189884 A1 WO 2022189884A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
insulator
conductor
unit
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2022/051720
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
大澤信晴
佐々木俊毅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to KR1020237034110A priority Critical patent/KR20230156093A/ko
Priority to US18/280,861 priority patent/US20240164132A1/en
Priority to CN202280020650.5A priority patent/CN117016045A/zh
Priority to JP2023504873A priority patent/JPWO2022189884A1/ja
Publication of WO2022189884A1 publication Critical patent/WO2022189884A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/06—Electrode terminals
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/90—Assemblies of multiple devices comprising at least one organic light-emitting element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/70—Testing, e.g. accelerated lifetime tests

Definitions

  • One embodiment of the present invention relates to a display device, an electronic device, or a semiconductor device.
  • one embodiment of the present invention is not limited to the above technical field.
  • a technical field of one embodiment of the invention disclosed in this specification and the like relates to a product, a method, or a manufacturing method.
  • one aspect of the invention relates to a process, machine, manufacture, or composition of matter. Therefore, the technical fields of one embodiment of the present invention disclosed in this specification more specifically include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, driving methods thereof, or manufacturing methods thereof; can be mentioned as an example.
  • a method for manufacturing an organic EL display that enables formation of a light-emitting layer without using a fine metal mask.
  • depositing a first luminescent organic material comprising a mixture of a host material and a dopant material over an electrode array including first and second pixel electrodes formed over an insulating substrate, forming the first light-emitting layer as a continuous film extending over the display area including the electrode array; a step of irradiating a portion of the first light-emitting layer located above the second pixel electrode with ultraviolet light; depositing a second luminescent organic material different from the organic material to form a second light-emitting layer as a continuous film extending over the display area; and forming a counter electrode over the second light-emitting layer.
  • An object of one embodiment of the present invention is to provide a novel display device that is highly convenient, useful, or reliable. Another object is to provide a novel electronic device that is highly convenient, useful, or reliable. Another object is to provide a novel display device, a novel electronic device, or a novel semiconductor device.
  • One embodiment of the present invention is a display device including a first light-emitting device and a second light-emitting device. Note that the second light emitting device is adjacent to the first light emitting device.
  • the first light emitting device comprises a first electrode, a second electrode, a first unit, a second unit, a first intermediate layer and a first layer.
  • the first unit is sandwiched between the second electrode and the first electrode, the second unit is sandwiched between the second electrode and the first unit, and the first intermediate layer is sandwiched between the second electrode and the first unit. Sandwiched between the unit and the first unit, the first layer is sandwiched between the first intermediate layer and the first unit.
  • the first unit has a function of emitting a first light
  • the second unit has a function of emitting a second light
  • the first intermediate layer has the function of supplying holes to the second unit, and the first intermediate layer has the function of supplying electrons to the first layer.
  • the first layer contains unpaired electrons, and the unpaired electrons are observed at a spin density of 1 ⁇ 10 16 spins/cm 3 or more and 1 ⁇ 10 18 spins/cm 3 or less using an electron spin resonance apparatus (ESR). can do.
  • the first layer includes a first inorganic compound and a first organic compound, the first organic compound having a lone pair of electrons, and the first organic compound interacting with the first inorganic compound. , forming a half-occupied orbital.
  • the second light emitting device comprises a third electrode, a fourth electrode, a third unit, a fourth unit, a second intermediate layer and a second layer.
  • the third unit is sandwiched between the fourth electrode and the third electrode
  • the fourth unit is sandwiched between the fourth electrode and the third unit
  • the second intermediate layer is sandwiched between the fourth electrode.
  • Sandwiched between the unit and the third unit, the second layer is sandwiched between the second intermediate layer and the third unit.
  • a third unit has a function of emitting a third light
  • a fourth unit has a function of emitting a fourth light
  • the second intermediate layer has the function of supplying holes to the fourth unit, and the second intermediate layer has the function of supplying electrons to the second layer.
  • the second intermediate layer has a first gap with the first intermediate layer and the second layer has a second gap with the first layer. Also, the second layer includes a first inorganic compound and a first organic compound.
  • one embodiment of the present invention is a display device in which the first light-emitting device includes a third layer, and the third layer is sandwiched between the first unit and the first electrode. is.
  • the second light emitting device also comprises a fourth layer, which is sandwiched between the third unit and the third electrode. Also, the fourth layer has a third gap between it and the third layer.
  • Another aspect of the present invention is a display device, wherein the third layer has an electrical resistivity of 1 ⁇ 10 2 [ ⁇ cm] or more and 1 ⁇ 10 8 [ ⁇ cm] or less. be.
  • Another embodiment of the present invention is a display device in which the unpaired electron has a g value in the range of 2.003 to 2.004.
  • the unpaired electrons are observed in the atmosphere at a spin density of 50% or more of the initial spin density after 24 hours using an electron spin resonance apparatus (ESR).
  • ESR electron spin resonance apparatus
  • the first intermediate layer and the first layer can be processed into a predetermined shape using, for example, a photolithography method. .
  • the second unit and the first layer can be processed into a predetermined shape using, for example, a photolithography method.
  • the second light emitting device can be formed at a position adjacent to the first light emitting device separated from the first light emitting device without using a fine metal mask.
  • Another embodiment of the present invention is a display device in which the first organic compound has an electron-deficient heteroaromatic ring.
  • Another aspect of the present invention is a display device, wherein the first organic compound has a lowest unoccupied molecular orbital (LUMO) level in the range of -3.6 eV to -2.3 eV. .
  • LUMO lowest unoccupied molecular orbital
  • Another embodiment of the present invention is a display device in which the first inorganic compound contains a metal element and oxygen.
  • Another embodiment of the present invention is a display device in which the first inorganic compound contains lithium and oxygen.
  • the driving voltage of the light emitting device can be suppressed.
  • power consumption can be suppressed.
  • Another embodiment of the present invention is a display device in which the first intermediate layer has unpaired electrons.
  • Another embodiment of the present invention is a display device in which the first intermediate layer contains a second organic compound and a third organic compound.
  • the second organic compound has at least one of an electron-rich heteroaromatic ring or an aromatic amine, and the second organic compound has the highest occupied molecular orbital (HOMO) level.
  • the third organic compound has fluorine, and the third organic compound has a lowest unoccupied molecular orbital (LUMO) level of ⁇ 5.0 eV or less. In addition, the third organic compound has an electron-accepting property with respect to the second organic compound.
  • LUMO lowest unoccupied molecular orbital
  • Another embodiment of the present invention is a display device in which the third organic compound has a cyano group.
  • Another aspect of the present invention is a display device in which the first intermediate layer does not contain a metal element.
  • the first intermediate layer can be formed without using a material such as a metal oxide that requires a high temperature for film formation. Also, the temperature required for film formation of the first intermediate layer can be suppressed. In addition, since formation of the first intermediate layer is facilitated, productivity can be enhanced. As a result, it is possible to provide a novel display device with excellent convenience, usefulness, or reliability.
  • Another aspect of the present invention is a display device in which the first intermediate layer includes a fifth layer and a sixth layer.
  • a fifth layer is sandwiched between the first and sixth layers, the fifth layer including a fourth organic compound.
  • the fourth organic compound has the lowest unoccupied molecular orbital (LUMO) level in the range of -4.0 eV to -3.3 eV.
  • Another embodiment of the present invention is the above display device including a first functional layer, a second functional layer, and a display region.
  • the first functional layer includes a driving circuit, and the driving circuit generates a first image signal and a second image signal.
  • a second functional layer overlaps the first functional layer, the second functional layer including a first pixel circuit and a second pixel circuit. Note that the first pixel circuit is supplied with the first image signal, and the second pixel circuit is supplied with the second image signal.
  • the display area comprises a set of pixels, the set of pixels including a first pixel and a second pixel.
  • the first pixel comprises a first light emitting device and a first pixel circuit, the first light emitting device electrically connected to the first pixel circuit.
  • the second pixel comprises a second light emitting device and a second pixel circuit, the second light emitting device electrically connected to the second pixel circuit.
  • Another embodiment of the present invention is an electronic device including a computing portion and the above display device.
  • the calculation unit generates image information, and the display device displays the image information.
  • Another embodiment of the present invention is an electronic device including a computing portion and the above display device.
  • the first functional layer includes an arithmetic unit, the arithmetic unit generates image information, and the display device displays the image information.
  • the terms "source” and “drain” of a transistor interchange with each other depending on the polarity of the transistor and the level of the potential applied to each terminal.
  • a terminal to which a low potential is applied is called a source
  • a terminal to which a high potential is applied is called a drain
  • a terminal to which a high potential is applied is called a source.
  • the connection relationship of transistors may be described on the assumption that the source and the drain are fixed. .
  • the source of a transistor means a source region which is part of a semiconductor film that functions as an active layer, or a source electrode connected to the semiconductor film.
  • the drain of a transistor means a drain region that is part of the semiconductor film or a drain electrode connected to the semiconductor film.
  • a gate means a gate electrode.
  • a state in which transistors are connected in series means, for example, a state in which only one of the source and drain of the first transistor is connected to only one of the source and drain of the second transistor. do.
  • a state in which transistors are connected in parallel means that one of the source and drain of the first transistor is connected to one of the source and drain of the second transistor, and the other of the source and drain of the first transistor is connected to It means the state of being connected to the other of the source and the drain of the second transistor.
  • connection means electrical connection, and corresponds to a state in which current, voltage or potential can be supplied or transmitted. Therefore, the state of being connected does not necessarily refer to the state of being directly connected, but rather the state of wiring, resistors, diodes, transistors, etc., so that current, voltage or potential can be supplied or transmitted.
  • a state of being indirectly connected via a circuit element is also included in this category.
  • connection includes such a case where one conductive film has the functions of a plurality of constituent elements.
  • one of the first electrode and the second electrode of the transistor refers to the source electrode, and the other refers to the drain electrode.
  • a novel display device with excellent convenience, usefulness, or reliability can be provided.
  • a novel display device, a novel electronic device, or a novel semiconductor device can be provided.
  • FIG. 1 is a diagram illustrating the configuration of a display device according to an embodiment.
  • 2A and 2B are diagrams for explaining the configuration of the display panel according to the embodiment.
  • FIG. 3 is a circuit diagram illustrating pixels of the display panel according to the embodiment.
  • 4A and 4B are diagrams for explaining the configuration of the display panel according to the embodiment.
  • 5A to 5C are diagrams for explaining the configuration of the display panel according to the embodiment.
  • FIG. 6 is a diagram for explaining the configuration of the display panel according to the embodiment.
  • FIG. 7 is a diagram for explaining the configuration of the display device according to the embodiment.
  • FIG. 8 is a diagram for explaining the configuration of the display device according to the embodiment.
  • FIG. 9 is a diagram for explaining the configuration of the display device according to the embodiment.
  • FIG. 10A and 10B are diagrams for explaining the configuration of the display device according to the embodiment.
  • FIG. 11 is a diagram for explaining the configuration of the display device according to the embodiment.
  • 12A and 12B are diagrams for explaining the configuration of the display device according to the embodiment.
  • FIG. 13 is a diagram for explaining the configuration of the display device according to the embodiment.
  • FIG. 14 is a diagram for explaining the configuration of the display device according to the embodiment.
  • FIG. 15 is a diagram for explaining the configuration of the display device according to the embodiment.
  • FIG. 16 is a diagram for explaining the configuration of the display device according to the embodiment.
  • 17A and 17B are diagrams for explaining the configuration of the display device according to the embodiment.
  • FIG. 18A to 18C are diagrams for explaining the configuration of a transistor according to the embodiment.
  • 19A to 19C are diagrams illustrating metal oxides according to embodiments.
  • 20A to 20D are diagrams for explaining the electronic device according to the embodiment.
  • 21A and 21B are diagrams for explaining the electronic device according to the embodiment.
  • FIG. 22 is a diagram illustrating the configuration of a light-emitting device according to an example.
  • FIG. 23 is a diagram illustrating the configuration of a light-emitting device according to an example.
  • FIG. 24 is a diagram illustrating the configuration of a light-emitting device according to an example.
  • FIG. 25 is a diagram illustrating current density-luminance characteristics of a light-emitting device according to an example.
  • FIG. 26 is a diagram illustrating luminance-current efficiency characteristics of a light-emitting device according to an example.
  • FIG. 27 is a diagram explaining the voltage-luminance characteristics of the light-emitting device according to the example.
  • FIG. 28 is a diagram explaining the voltage-current characteristics of the light-emitting device according to the example.
  • FIG. 29 is a diagram explaining the emission spectrum of the light emitting device according to the example.
  • FIG. 30 is a diagram illustrating the configuration of a light-emitting device according to an example.
  • FIG. 31 is a diagram illustrating the configuration of a light-emitting device according to an example.
  • FIG. 32 is a diagram illustrating the current density-luminance characteristics of the light-emitting device according to the example.
  • FIG. 33 is a diagram illustrating luminance-current efficiency characteristics of a light-emitting device according to an example.
  • FIG. 34 is a diagram explaining the voltage-luminance characteristics of the light-emitting device according to the example.
  • FIG. 35 is a diagram explaining the voltage-current characteristics of the light-emitting device according to the example.
  • FIG. 36 is a diagram explaining the emission spectrum of the light emitting device according to the example.
  • FIG. 37 is a diagram illustrating the configuration of a measurement sample according to the example.
  • FIG. 38 is an electron spin resonance spectrum of a measurement sample according to Example.
  • FIG. 39 is an electron spin resonance spectrum of a comparative sample according to Example.
  • FIG. 40 is a diagram explaining changes in the electron spin resonance spectrum of the measurement sample according to the example.
  • FIG. 41 is an electron spin resonance spectrum of a measurement sample according to Example.
  • FIG. 42 is an electron spin resonance spectrum of a measurement sample according to Example.
  • FIG. 43 is an electron spin resonance spectrum of a measurement sample according to Example.
  • FIG. 44 is a diagram for explaining spin densities of measurement samples according to Examples.
  • a display device of one embodiment of the present invention includes a first light-emitting device and a second light-emitting device, and the second light-emitting device is adjacent to the first light-emitting device.
  • the first light emitting device comprises a first electrode, a second electrode, a first unit, a second unit, a first intermediate layer and a first layer, the second electrode being the first electrode. Overlying, the first unit sandwiched between the second electrode and the first electrode, the second unit sandwiched between the second electrode and the first unit, and the first intermediate layer sandwiching the second electrode. and the first unit, and the first layer is sandwiched between the first intermediate layer and the first unit.
  • the first unit has a function of emitting a first light
  • the second unit has a function of emitting a second light
  • the first intermediate layer has a function of supplying holes to the second unit.
  • the first intermediate layer has the function of supplying electrons to the first layer.
  • the first layer contains unpaired electrons, and the unpaired electrons are observed at a spin density of 1 ⁇ 10 16 spins/cm 3 or more and 1 ⁇ 10 18 spins/cm 3 or less using an electron spin resonance apparatus (ESR).
  • ESR electron spin resonance apparatus
  • the first layer comprises a first inorganic compound and a first organic compound, the first organic compound comprising a lone pair of electrons, the first organic compound interacting with the first inorganic compound; to form a half-occupied orbital.
  • a second light emitting device comprising a third electrode, a fourth electrode, a third unit, a fourth unit, a second intermediate layer and a second layer, the fourth electrode being the third electrode;
  • the third unit is sandwiched between the fourth electrode and the third electrode, the fourth unit is sandwiched between the fourth electrode and the third unit, and the second intermediate layer is sandwiched between the fourth electrode and the third unit.
  • a third unit the second layer is sandwiched between the second intermediate layer and the third unit, the third unit has a function of emitting a third light,
  • the fourth unit has a function of emitting a fourth light, the second intermediate layer has a function of supplying holes to the fourth unit, and the second intermediate layer provides electrons to the second layer. It has a function to supply.
  • the second intermediate layer has a first gap with the first intermediate layer, the second layer has a second gap with the first layer, and the second layer has a gap with the first layer. It includes an inorganic compound and a first organic compound.
  • FIG. 1 is a cross-sectional view illustrating the structure of a light-emitting device of one embodiment of the present invention.
  • Light-emitting device 550X(i,j) includes electrode 551X(i,j), electrode 552X(i,j), unit 103X(i,j), unit 103X2(i,j), and intermediate layer 106X( i, j) and
  • Electrode 552X(i,j) overlaps electrode 551X(i,j). Also, unit 103X(i,j) is sandwiched between electrode 552X(i,j) and electrode 551X(i,j), and unit 103X2(i,j) is sandwiched between electrode 552X(i,j) and unit 103X(i,j). i,j) and intermediate layer 106X(i,j) comprises a region sandwiched between unit 103X2(i,j) and unit 103X(i,j).
  • the unit 103X(i, j) has a function of emitting light ELX
  • the unit 103X2(i, j) has a function of emitting light ELX2.
  • the light emitting device 550X(i,j) has multiple stacked units between the electrodes 551X(i,j) and the electrodes 552X(i,j).
  • the number of stacked units is not limited to two, and three or more units can be stacked.
  • a plurality of stacked units sandwiched between the electrodes 551X(i, j) and the electrodes 552X(i, j), an intermediate layer 106X(i, j) sandwiched between the plurality of units is sometimes referred to as a stacked light emitting device or a tandem light emitting device. This makes it possible to obtain high-luminance light emission while keeping the current density low. Alternatively, reliability can be improved. Alternatively, the drive voltage can be reduced by comparing the same luminance. Alternatively, power consumption can be suppressed.
  • Unit 103X(i, j) has a single layer structure or a laminated structure.
  • unit 103X(i,j) comprises layer 111X(i,j), layer 112X(i,j) and layer 113X(i,j) (see FIG. 1).
  • Unit 103X(i, j) has a function of emitting light ELX.
  • Layer 111X(i,j) comprises a region sandwiched between layer 112X(i,j) and layer 113X(i,j), and layer 112X(i,j) comprises electrode 551X(i,j) and layer 111X.
  • Layer 113X(i,j) comprises a region sandwiched between electrode 552X(i,j) and layer 111X(i,j).
  • a layer selected from functional layers such as a light-emitting layer, a hole-transport layer, an electron-transport layer, and a carrier-block layer can be used for the unit 103X(i,j).
  • a layer selected from functional layers such as a hole injection layer, an electron injection layer, an exciton blocking layer, and a charge generation layer can be used for the unit 103X(i,j).
  • a material with hole-transport properties can be used for the layer 112X(i,j).
  • the layer 112X(i,j) can be referred to as a hole transport layer. Note that it is preferable to use a material for the layer 112X(i, j) having a bandgap larger than that of the light-emitting material included in the layer 111X(i, j). Thus, energy transfer from excitons generated in the layer 111X(i, j) to the layer 112X(i, j) can be suppressed.
  • a material having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more can be suitably used as a material having a hole-transport property.
  • an amine compound or an organic compound having a ⁇ -electron rich heteroaromatic ring skeleton can be used as a material having a hole-transport property.
  • a compound having an aromatic amine skeleton, a compound having a carbazole skeleton, a compound having a thiophene skeleton, a compound having a furan skeleton, and the like can be used.
  • a compound having an aromatic amine skeleton or a compound having a carbazole skeleton is preferable because it has good reliability, high hole-transport properties, and contributes to reduction in driving voltage.
  • Examples of compounds having an aromatic amine skeleton include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N'-bis(3-methylphenyl )-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviation: TPD), 4,4'-bis[N-(spiro-9,9'-bifluorene-2 -yl)-N-phenylamino]biphenyl (abbreviation: BSPB), 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3′-( 9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4′-(9-phenyl-9H-carba
  • Examples of compounds having a carbazole skeleton include 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4′-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis (3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,3′-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), and the like can be used.
  • mCP 1,3-bis(N-carbazolyl)benzene
  • CBP 4,4′-di(N-carbazolyl)biphenyl
  • CzTP 3,6-bis (3,5-diphenylphenyl)-9-phenylcarbazole
  • PCCP 3,3′-bis(9-phenyl-9H-carbazole)
  • Compounds having a thiophene skeleton include, for example, 4,4′,4′′-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4 -[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]- 6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), etc. can be used.
  • DBT3P-II 4,4′,4′′-(benzene-1,3,5-triyl)tri(dibenzothiophene)
  • DBTFLP-III 2,8-diphenyl-4 -[4-(9-phenyl-9H-fluoren-9-yl)
  • Examples of compounds having a furan skeleton include 4,4′,4′′-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), 4- ⁇ 3-[3- (9-phenyl-9H-fluoren-9-yl)phenyl]phenyl ⁇ dibenzofuran (abbreviation: mmDBFFLBi-II), and the like can be used.
  • DBF3P-II 4,4′,4′′-(benzene-1,3,5-triyl)tri(dibenzofuran)
  • mmDBFFLBi-II 4- ⁇ 3-[3- (9-phenyl-9H-fluoren-9-yl)phenyl]phenyl ⁇ dibenzofuran
  • ⁇ Configuration example of layer 113X (i, j)>> For example, a material having an electron-transporting property, a material having an anthracene skeleton, a mixed material, or the like can be used for the layer 113X(i, j). Also, the layer 113X(i,j) can be referred to as an electron transport layer. Note that it is preferable to use a material for the layer 113X(i, j) that has a larger bandgap than the light-emitting material contained in the layer 111X(i, j). Thus, energy transfer from excitons generated in the layer 111X(i, j) to the layer 113X(i, j) can be suppressed.
  • a metal complex or an organic compound having a ⁇ -electron-deficient heteroaromatic ring skeleton can be used as the electron-transporting material.
  • a material having an electron mobility of 1 ⁇ 10 ⁇ 7 cm 2 /Vs or more and 5 ⁇ 10 ⁇ 5 cm 2 /Vs or less under the condition that the square root of the electric field strength [V/cm] is 600 is considered to have an electron transport property. It can be suitably used for materials having Thereby, the electron transport property in the electron transport layer can be suppressed. Alternatively, the injection amount of electrons into the light-emitting layer can be controlled. Alternatively, it is possible to prevent the light-emitting layer from being in a state of excess electrons.
  • metal complexes include bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis( 2 -methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), bis[2- (2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ), and the like can be used.
  • Examples of the organic compound having a ⁇ -electron-deficient heteroaromatic ring skeleton include a heterocyclic compound having a polyazole skeleton, a heterocyclic compound having a diazine skeleton, a heterocyclic compound having a pyridine skeleton, a heterocyclic compound having a triazine skeleton, and the like. can be used.
  • a heterocyclic compound having a diazine skeleton or a heterocyclic compound having a pyridine skeleton is preferable because of its high reliability.
  • a heterocyclic compound having a diazine (pyrimidine or pyrazine) skeleton has a high electron-transport property and can reduce driving voltage.
  • heterocyclic compounds having a polyazole skeleton examples include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4 -biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1 ,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H -carbazole (abbreviation: CO11), 2,2′,2′′-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-
  • heterocyclic compounds having a diazine skeleton examples include 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3′-(dibenzo thiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3′-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[ f,h]quinoxaline (abbreviation: 2mCzBPDBq), 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl) ) phenyl]pyrimidine (abbreviation:
  • Heterocyclic compounds having a pyridine skeleton include, for example, 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(3 -pyridyl)phenyl]benzene (abbreviation: TmPyPB), and the like can be used.
  • 35DCzPPy 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine
  • TmPyPB 1,3,5-tri[3-(3 -pyridyl)phenyl]benzene
  • heterocyclic compounds having a triazine skeleton examples include 2-[3′-(9,9-dimethyl-9H-fluoren-2-yl)-1,1′-biphenyl-3-yl]-4,6- Diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 2-[(1,1′-biphenyl)-4-yl]-4-phenyl-6-[9,9′-spirobi(9H-fluorene) -2-yl]-1,3,5-triazine (abbreviation: BP-SFTzn), 2- ⁇ 3-[3-(benzo “b” naphtho[1,2-d]furan-8-yl)phenyl] Phenyl ⁇ -4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTZn), 2- ⁇ 3-[3-[3-(benzo "b” naphtho[1,2-d]furan
  • An organic compound having an anthracene skeleton can be used for the layer 113X(i, j).
  • an organic compound containing both an anthracene skeleton and a heterocyclic skeleton can be preferably used.
  • an organic compound containing both an anthracene skeleton and a nitrogen-containing five-membered ring skeleton can be used.
  • an organic compound containing both a nitrogen-containing five-membered ring skeleton containing two heteroatoms in the ring and an anthracene skeleton can be used.
  • a pyrazole ring, imidazole ring, oxazole ring, thiazole ring, and the like can be suitably used for the heterocyclic skeleton.
  • an organic compound containing both an anthracene skeleton and a nitrogen-containing 6-membered ring skeleton can be used.
  • an organic compound containing both a nitrogen-containing 6-membered ring skeleton containing two heteroatoms in the ring and an anthracene skeleton can be used.
  • a pyrazine ring, a pyrimidine ring, a pyridazine ring, or the like can be suitably used for the heterocyclic skeleton.
  • a material in which multiple types of substances are mixed can be used for the layer 113X(i, j).
  • a mixed material containing an alkali metal, an alkali metal compound, or an alkali metal complex and a substance having an electron-transporting property can be used for the layer 113X(i, j).
  • the above light-emitting device may be referred to as a Recombination-Site Tailoring Injection structure (ReSTI structure).
  • the HOMO level of the material having an electron-transport property is more preferably ⁇ 6.0 eV or higher. Further, it is preferable that the alkali metal, alkali metal compound, or alkali metal complex exists with a concentration difference in the thickness direction of the layer 113X(i, j).
  • a metal complex containing an 8-hydroxyquinolinato structure can be used.
  • a methyl-substituted metal complex containing an 8-hydroxyquinolinato structure for example, a 2-methyl-substituted one or a 5-methyl-substituted one
  • a metal complex containing an 8-hydroxyquinolinato structure for example, a 2-methyl-substituted one or a 5-methyl-substituted one
  • 8-hydroxyquinolinato-lithium abbreviation: Liq
  • 8-hydroxyquinolinato-sodium abbreviation: Naq
  • monovalent metal ion complexes especially lithium complexes, are preferred, and Liq is more preferred.
  • emissive materials or emissive materials and host materials
  • the layer 111X(i,j) can be called a light-emitting layer. Note that a structure in which the layer 111X(i, j) is arranged in a region where holes and electrons recombine is preferable. As a result, energy generated by recombination of carriers can be efficiently converted into light and emitted.
  • the layer 111X(i, j) it is preferable to arrange the layer 111X(i, j) away from the metal used for the electrode or the like. As a result, it is possible to suppress the quenching phenomenon caused by the metal used for the electrode or the like.
  • the layer 111X(i, j) at an appropriate position according to the emission wavelength by adjusting the distance from the reflective electrode or the like to the layer 111X(i, j).
  • the amplitude can be strengthened by utilizing the interference phenomenon between the light reflected by the electrodes and the like and the light emitted from the layer 111X(i, j).
  • the spectrum of light can be narrowed by intensifying light of a predetermined wavelength.
  • bright luminescent colors can be obtained with high intensity.
  • layers 111X(i,j) can be placed at appropriate locations between electrodes etc. to form a microresonator structure (microcavity).
  • a fluorescent luminescent material a phosphorescent luminescent material, or a material exhibiting thermally activated delayed fluorescence (TADF) (also referred to as a TADF material) can be used as the luminescent material.
  • TADF thermally activated delayed fluorescence
  • a fluorescent emitting material can be used for layer 111X(i,j).
  • the fluorescent light-emitting materials exemplified below can be used for the layer 111X(i,j).
  • the layer 111X(i, j) is not limited to this, and various known fluorescent light-emitting materials can be used for the layer 111X(i, j).
  • condensed aromatic diamine compounds typified by pyrenediamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 are preferable because of their high hole-trapping properties and excellent luminous efficiency or reliability.
  • N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine abbreviation: 2DPAPPA
  • N,N,N' ,N′,N′′,N′′,N′′′,N′′′-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetramine abbreviation: DBC1
  • DBC1 N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine
  • 2PCAPA N-[9,10-bis(1,1'-biphenyl-2 -yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine
  • 2PCABPhA N-(9,10-diphenyl-2-anthryl
  • DCM1 2-(2- ⁇ 2-[4-(dimethylamino)phenyl]ethenyl ⁇ -6-methyl-4H-pyran-4-ylidene)propanedinitrile
  • DCM2 2- ⁇ 2-methyl- 6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolidin-9-yl)ethenyl]-4H-pyran-4-ylidene ⁇ propandinitrile
  • DCM2 N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine
  • p-mPhTD 7,14-diphenyl-N,N,N',N'-tetrakis
  • 4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine abbreviation: p-mPhAFD
  • a phosphorescent emissive material can be used for layer 111X(i,j).
  • the following phosphorescent materials can be used for the layer 111X(i,j).
  • an organometallic iridium complex having a 4H-triazole skeleton, an organometallic iridium complex having a 1H-triazole skeleton, an organometallic iridium complex having an imidazole skeleton, and an organometallic iridium having a phenylpyridine derivative having an electron-withdrawing group as a ligand A complex, an organometallic iridium complex having a pyrimidine skeleton, an organometallic iridium complex having a pyrazine skeleton, an organometallic iridium complex having a pyridine skeleton, a rare earth metal complex, a platinum complex, etc. can be used for the layer 111X(i, j). .
  • Organometallic iridium complexes having a 4H-triazole skeleton include tris ⁇ 2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazole-3 -yl- ⁇ N2]phenyl- ⁇ C ⁇ iridium(III) (abbreviation: [Ir(mpptz-dmp) 3 ]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium (III) (abbreviation: [Ir(Mptz) 3 ]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium (III) (abbreviation: [Ir(iPrptz-3b) 3 ]), etc. can be used.
  • organometallic iridium complexes having a 1H-triazole skeleton examples include tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium (III) (abbreviation: [Ir(Mptz1-mp) 3 ]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium (III) (abbreviation: [Ir(Prptz1-Me) 3 ) ]), etc. can be used.
  • organometallic iridium complexes having an imidazole skeleton examples include fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpmi) 3 ]) , tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium (III) (abbreviation: [Ir(dmpimpt-Me) 3 ]), etc. can be used.
  • organometallic iridium complexes having a phenylpyridine derivative having an electron-withdrawing group as a ligand include bis[2-(4′,6′-difluorophenyl)pyridinato-N,C 2′ ]iridium(III) tetrakis ( 1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4′,6′-difluorophenyl)pyridinato-N,C 2′ ]iridium(III) picolinate (abbreviation: FIrpic), bis ⁇ 2-[3 ',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C2 ' ⁇ iridium(III) picolinate (abbreviation: [Ir( CF3ppy ) 2 (pic)]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C2 ' ]
  • Organometallic iridium complexes having a pyrimidine skeleton include tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mpm) 3 ]), tris(4-t-butyl-6 -phenylpyrimidinato)iridium (III) (abbreviation: [Ir(tBuppm) 3 ]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium (III) (abbreviation: [Ir( mppm) 2 (acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium (III) (abbreviation: [Ir(tBuppm) 2 (acac)]), (acetyl acetonato)bis[6-(2-norborny
  • organometallic iridium complexes having a pyrazine skeleton examples include (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium (III) (abbreviation: [Ir(mppr-Me) 2 (acac) ]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr) 2 (acac)]), etc. can be done.
  • organometallic iridium complexes having a pyridine skeleton examples include tris(2-phenylpyridinato-N,C2 ' )iridium(III) (abbreviation: [Ir(ppy) 3 ]), bis(2-phenylpyridina to-N,C2 ' )iridium(III) acetylacetonate (abbreviation: [Ir(ppy) 2 (acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir (bzq) 2 (acac)]), tris(benzo[h]quinolinato)iridium (III) (abbreviation: [Ir(bzq) 3 ]), tris(2-phenylquinolinato-N,C 2′ )iridium ( III) (abbreviation: [Ir(pq) 3 ]), bis(2-phenylquinolinato-N
  • Rare earth metal complexes include tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac) 3 (Phen)]), and the like.
  • These compounds mainly emit green phosphorescence and have a peak emission wavelength between 500 nm and 600 nm. Also, an organometallic iridium complex having a pyrimidine skeleton is remarkably excellent in reliability or luminous efficiency.
  • organometallic iridium complexes having a pyrimidine skeleton examples include (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm) 2 (dibm)] ), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium (III) (abbreviation: [Ir(5mdppm) 2 (dpm)]), bis[4,6-di (naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(d1npm) 2 (dpm)]), and the like can be used.
  • organometallic iridium complexes having a pyrazine skeleton examples include (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium (III) (abbreviation: [Ir(tppr) 2 (acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr) 2 (dpm)]), (acetylacetonato)bis[2,3 -Bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq) 2 (acac)]) and the like can be used.
  • Organometallic iridium complexes having a pyridine skeleton include tris(1-phenylisoquinolinato-N,C2 ' )iridium(III) (abbreviation: [Ir(piq) 3 ]), bis(1-phenylisoquino linato-N,C2 ' )iridium(III) acetylacetonate (abbreviation: [Ir(piq) 2 (acac)]), and the like can be used.
  • rare earth metal complexes include tris(1,3-diphenyl-1,3-propanedionate)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM) 3 (Phen)]), tris[1- (2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline) europium (III) (abbreviation: [Eu(TTA) 3 (Phen)]) and the like can be used.
  • PtOEP 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrinplatinum(II) (abbreviation: PtOEP) or the like can be used.
  • an organometallic iridium complex having a pyrazine skeleton provides red light emission with chromaticity suitable for use in display devices.
  • TADF material can be used for layer 111X(i,j).
  • a TADF material exemplified below can be used as a luminescent material.
  • Various known TADF materials can be used as the luminescent material without being limited to this.
  • a TADF material has a small difference between the S1 level and the T1 level, and can reverse intersystem crossing (up-convert) from a triplet excited state to a singlet excited state with a small amount of thermal energy. Thereby, a singlet excited state can be efficiently generated from a triplet excited state. Also, triplet excitation energy can be converted into luminescence.
  • an exciplex also called exciplex, exciplex, or Exciplex
  • an exciplex in which two kinds of substances form an excited state has an extremely small difference between the S1 level and the T1 level, and the triplet excitation energy is replaced by the singlet excitation energy. It functions as a TADF material that can be converted into
  • a phosphorescence spectrum observed at a low temperature may be used as an index of the T1 level.
  • a tangent line is drawn at the tail of the fluorescence spectrum on the short wavelength side
  • the energy of the wavelength of the extrapolated line is the S1 level
  • a tangent line is drawn at the tail of the phosphorescence spectrum on the short wavelength side
  • the extrapolation When the energy of the wavelength of the line is the T1 level, the difference between S1 and T1 is preferably 0.3 eV or less, more preferably 0.2 eV or less.
  • the S1 level of the host material is preferably higher than the S1 level of the TADF material.
  • the T1 level of the host material is preferably higher than the T1 level of the TADF material.
  • fullerene and its derivatives, acridine and its derivatives, eosin derivatives, etc. can be used as the TADF material.
  • Metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd) can also be used as TADF materials. can.
  • protoporphyrin-tin fluoride complex SnF2 (Proto IX)
  • mesoporphyrin-tin fluoride complex SnF2 (Meso IX)
  • hematoporphyrin-tin fluoride which have the following structural formulas complex (SnF 2 (Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF 2 (Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF 2 (OEP)), ethioporphyrin- Tin fluoride complex (SnF 2 (Etio I)), octaethylporphyrin-platinum chloride complex (PtCl 2 OEP), and the like can be used.
  • a heterocyclic compound having one or both of a ⁇ -electron-rich heteroaromatic ring and a ⁇ -electron-deficient heteroaromatic ring can be used as the TADF material.
  • the heterocyclic compound has a ⁇ -electron-rich heteroaromatic ring and a ⁇ -electron-deficient heteroaromatic ring, the heterocyclic compound has both high electron-transporting properties and high hole-transporting properties, which is preferable.
  • skeletons having a ⁇ -electron-deficient heteroaromatic ring a pyridine skeleton, a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and a triazine skeleton are particularly preferable because they are stable and reliable.
  • a benzofuropyrimidine skeleton, a benzothienopyrimidine skeleton, a benzofuropyrazine skeleton, and a benzothienopyrazine skeleton are preferred because they have high acceptor properties and good reliability.
  • an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton are stable and reliable. It is preferred to have A dibenzofuran skeleton is preferable as the furan skeleton, and a dibenzothiophene skeleton is preferable as the thiophene skeleton.
  • an indole skeleton As the pyrrole skeleton, an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarbazole skeleton, and a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferred.
  • a substance in which a ⁇ -electron-rich heteroaromatic ring and a ⁇ -electron-deficient heteroaromatic ring are directly bonded has both the electron-donating property of the ⁇ -electron-rich heteroaromatic ring and the electron-accepting property of the ⁇ -electron-deficient heteroaromatic ring. It is particularly preferable because it becomes stronger and the energy difference between the S1 level and the T1 level becomes smaller, so that thermally activated delayed fluorescence can be efficiently obtained.
  • An aromatic ring to which an electron-withdrawing group such as a cyano group is bonded may be used instead of the ⁇ -electron-deficient heteroaromatic ring.
  • an aromatic amine skeleton, a phenazine skeleton, or the like can be used as the ⁇ -electron-rich skeleton.
  • the ⁇ -electron-deficient skeleton includes a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or borantrene, and a nitrile such as benzonitrile or cyanobenzene.
  • An aromatic ring or heteroaromatic ring having a group or a cyano group, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, or the like can be used.
  • a ⁇ -electron-deficient skeleton and a ⁇ -electron-rich skeleton can be used in place of at least one of the ⁇ -electron-deficient heteroaromatic ring and the ⁇ -electron-rich heteroaromatic ring.
  • a material having a carrier-transport property can be used as the host material.
  • a material having a hole-transporting property, a material having an electron-transporting property, a substance exhibiting thermally activated delayed fluorescence TADF, a material having an anthracene skeleton, a mixed material, and the like can be used as the host material.
  • a structure in which a material having a larger bandgap than the light-emitting material contained in the layer 111X(i, j) is used as the host material is preferable. Accordingly, energy transfer from excitons generated in the layer 111X(i, j) to the host material can be suppressed.
  • a material having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more can be suitably used as a material having a hole-transport property.
  • a hole-transporting material that can be used for the layer 112X(i, j) can be used for the layer 111X(i, j).
  • a material having a hole-transport property that can be used for the hole-transport layer can be used for the layer 111X(i, j).
  • a metal complex or an organic compound having a ⁇ -electron-deficient heteroaromatic ring skeleton can be used as the electron-transporting material.
  • an electron-transporting material that can be used for the layer 113X(i, j) can be used for the layer 111X(i, j).
  • a material having an electron-transport property that can be used for the electron-transport layer can be used for the layer 111X(i, j).
  • An organic compound having an anthracene skeleton can be used as the host material.
  • an organic compound having an anthracene skeleton is suitable. This makes it possible to realize a light-emitting device with good luminous efficiency and durability.
  • an organic compound having an anthracene skeleton an organic compound having a diphenylanthracene skeleton, particularly a 9,10-diphenylanthracene skeleton is preferable because it is chemically stable.
  • the host material has a carbazole skeleton because the hole injection/transport properties are enhanced.
  • the HOMO level is about 0.1 eV shallower than that of carbazole. is.
  • a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.
  • a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton, a substance having both a 9,10-diphenylanthracene skeleton and a benzocarbazole skeleton, and a substance having both a 9,10-diphenylanthracene skeleton and a dibenzocarbazole skeleton are It is preferable as a host material.
  • 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan abbreviation: 2mBnfPPA
  • 9-phenyl-10- ⁇ 4-( 9-phenyl-9H-fluoren-9-yl)biphenyl-4′-yl ⁇ anthracene abbreviation: FLPPA
  • 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene abbreviation: ⁇ N- ⁇ NPAnth
  • PCzPA 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole
  • CzPA 7-[4-[4-[4-(10-phenyl-9-anthracenyl)phenyl ]-9H-carbazole
  • CzPA 7-[4-[4-
  • CzPA, cgDBCzPA, 2mBnfPPA and PCzPA exhibit very good properties.
  • a TADF material can be used as the host material.
  • TADF materials can convert triplet excitation energy to singlet excitation energy through reverse intersystem crossing.
  • a configuration in which carriers recombine is preferable.
  • the excitation energy can be transferred to the luminescent material.
  • the TADF material acts as an energy donor and the luminescent material acts as an energy acceptor. This can increase the luminous efficiency of the light emitting device.
  • a fluorescence-emitting substance can be preferably used.
  • high luminous efficiency can be obtained when the S1 level of the TADF material is higher than the S1 level of the fluorescent material.
  • the T1 level of the TADF material is higher than the S1 level of the fluorescent material.
  • the T1 level of the TADF material is higher than the T1 level of the fluorescent material.
  • a TADF material that emits light that overlaps the wavelength of the absorption band on the lowest energy side of the fluorescent light-emitting substance. This facilitates the transfer of excitation energy from the TADF material to the fluorescent light-emitting substance, making it possible to efficiently obtain light emission.
  • the fluorescent light-emitting substance used as the energy acceptor preferably has a luminophore (skeleton that causes luminescence) and a protecting group around the luminophore. Moreover, it is more preferable to have a plurality of protecting groups. This can suppress the phenomenon that the triplet excitation energy generated in the TADF material is transferred to the triplet excitation energy of the fluorescence-emitting substance.
  • the luminophore refers to an atomic group (skeleton) that causes luminescence in a fluorescent light-emitting substance.
  • the luminophore preferably has a skeleton having a ⁇ bond, preferably contains an aromatic ring, and preferably has a condensed aromatic ring or a condensed heteroaromatic ring.
  • the condensed aromatic ring or condensed heteroaromatic ring includes a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, and the like.
  • a naphthalene skeleton, anthracene skeleton, fluorene skeleton, chrysene skeleton, triphenylene skeleton, tetracene skeleton, pyrene skeleton, perylene skeleton, coumarin skeleton, quinacridone skeleton, and naphthobisbenzofuran skeleton are preferred because of their high fluorescence quantum yield. .
  • a substituent having no ⁇ bond is preferable.
  • saturated hydrocarbons are preferable, and specifically, a methyl group, a branched alkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms forming a ring, A trialkylsilyl group having 3 to 10 carbon atoms can be used as a protecting group.
  • Substituents that do not have a ⁇ bond are poor in the function of transporting carriers.
  • TADF material that can be used as a light-emitting material can be used as a host material.
  • composition example 1 of mixed material A material in which a plurality of kinds of substances are mixed can be used as the host material.
  • a material having an electron-transporting property and a material having a hole-transporting property can be used as a mixed material.
  • composition example 2 of mixed material A material mixed with a phosphorescent substance can be used as the host material.
  • a phosphorescent light-emitting substance can be used as an energy donor that provides excitation energy to a fluorescent light-emitting substance when a fluorescent light-emitting substance is used as the light-emitting substance.
  • the phosphorescent substance When a material mixed with a phosphorescent substance is used as the host material, the phosphorescent substance preferably has a protective group. Moreover, it is more preferable to have a plurality of protecting groups.
  • a substituent having no ⁇ bond is preferable.
  • saturated hydrocarbons are preferable, and specifically, branched alkyl groups having 3 to 10 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3 to 10 carbon atoms forming a ring, and 3 carbon atoms.
  • Above 10 trialkylsilyl groups can be used as protective groups.
  • Substituents that do not have a ⁇ bond are poor in the function of transporting carriers. This allows the lumophores of the fluorescent emitters to be kept away from the phosphorescent emitters and the distance between the phosphorescent and fluorescent emitters to be adequate, with little effect on carrier transport or carrier recombination. can.
  • energy transfer by the Dexter mechanism can be suppressed, and energy transfer by the Forster mechanism can be promoted.
  • the fluorescent light-emitting substance has a luminophore (skeleton that causes light emission) and a protective group around the luminophore. is preferred. Moreover, it is more preferable to have a plurality of protecting groups.
  • composition example 3 of mixed material A mixed material containing a material that forms an exciplex can be used as the host material.
  • a material in which the emission spectrum of the formed exciplex overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting substance can be used as the host material.
  • the drive voltage can be suppressed.
  • ExTET Exciplex-Triplet Energy Transfer
  • At least one of the materials that form an exciplex can be a phosphorescent substance. This makes it possible to take advantage of reverse intersystem crossing. Alternatively, triplet excitation energy can be efficiently converted into singlet excitation energy.
  • the HOMO level of the material having a hole-transporting property is higher than or equal to the HOMO level of the material having an electron-transporting property.
  • the LUMO level of the material having a hole-transporting property is preferably higher than or equal to the LUMO level of the material having an electron-transporting property. Accordingly, an exciplex can be efficiently formed.
  • the LUMO level and HOMO level of the material can be derived from the electrochemical properties (reduction potential and oxidation potential). Specifically, cyclic voltammetry (CV) measurements can be used to measure reduction and oxidation potentials.
  • an exciplex is performed by comparing, for example, the emission spectrum of a material having a hole-transporting property, the emission spectrum of a material having an electron-transporting property, and the emission spectrum of a mixed film in which these materials are mixed. can be confirmed by observing the phenomenon that the emission spectrum of each material shifts to a longer wavelength (or has a new peak on the longer wavelength side).
  • the transient photoluminescence (PL) of a material having a hole-transporting property, the transient PL of a material having an electron-transporting property, and the transient PL of a mixed film in which these materials are mixed are compared, and the transient PL lifetime of the mixed film is This can be confirmed by observing the difference in transient response, such as having a component with a longer lifetime than the transient PL lifetime of each material, or having a larger proportion of a delayed component.
  • the transient PL described above may be read as transient electroluminescence (EL).
  • the formation of an exciplex can also be confirmed. can be confirmed.
  • Intermediate layer 106X(i, j) has a function of supplying electrons to one of unit 103X(i, j) or unit 103X2(i, j) and supplying holes to the other. Also, the intermediate layer 106X(i,j) contains unpaired electrons.
  • intermediate layer 106X(i,j) comprises layer 106X1(i,j) and layer 106X2(i,j).
  • Layer 106X2(i,j) is sandwiched between layer 106X1(i,j) and unit 103X2(i,j).
  • a material that supplies electrons to the anode side and holes to the cathode side upon application of a voltage can be used for layer 106X2(i,j).
  • electrons can be supplied to the unit 103X(i, j) arranged on the anode side
  • holes can be supplied to the unit 103X2(i, j) arranged on the cathode side.
  • layer 106X2(i,j) can be referred to as a charge generation layer.
  • a material with acceptor properties can be used for the layer 106X2(i,j).
  • a composite material containing multiple substances can be used for layer 106X2(i,j).
  • Organic compounds and inorganic compounds can be used as substances having acceptor properties.
  • a substance having an acceptor property can extract electrons from an adjacent hole-transporting layer or a material having a hole-transporting property by application of an electric field.
  • a compound having an electron-withdrawing group (a halogen group or a cyano group) can be used as a substance having acceptor properties.
  • a compound having an electron-withdrawing group a halogen group or a cyano group
  • an organic compound having an acceptor property is easily vapor-deposited and easily formed into a film. Thereby, the productivity of the light-emitting device can be improved.
  • a compound in which an electron-withdrawing group is bound to a condensed aromatic ring having a plurality of heteroatoms such as HAT-CN, is thermally stable and preferable.
  • Radialene derivatives having an electron-withdrawing group are preferred because they have very high electron-accepting properties.
  • Molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, or the like can be used as the substance having acceptor properties.
  • phthalocyanine-based complex compounds such as phthalocyanine (abbreviation: H 2 Pc) and copper phthalocyanine (CuPc), 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis ⁇ 4-[bis(3-methylphenyl)amino]phenyl ⁇ -N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviation: A compound having an aromatic amine skeleton such as DNTPD) can be used.
  • DPAB 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl
  • DPAB 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl
  • DPAB 4,4
  • Polymers such as poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonic acid) (PEDOT/PSS) can also be used.
  • compounds with an aromatic amine skeleton, carbazole derivatives, aromatic hydrocarbons, aromatic hydrocarbons with a vinyl group, polymer compounds (oligomers, dendrimers, polymers, etc.) can be used as hole transporters in composite materials. It can be used for materials having properties.
  • a material having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more can be suitably used as a material having a hole-transport property of the composite material.
  • a substance having a relatively deep HOMO level can be suitably used as a hole-transporting material of the composite material.
  • the HOMO level is preferably ⁇ 5.7 eV or more and ⁇ 5.3 eV or less. This facilitates the injection of holes into the unit 103X2(i, j). Alternatively, hole injection into layer 112X2(i,j) can be facilitated. Alternatively, the reliability of the light emitting device can be improved.
  • Examples of compounds having an aromatic amine skeleton include N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N- (4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis ⁇ 4-[bis(3-methylphenyl)amino]phenyl ⁇ -N,N'-diphenyl-( 1,1′-biphenyl)-4,4′-diamine (abbreviation: DNTPD), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), etc. can be used.
  • DTDPPA 4,4'-bis[N- (4-diphenylaminophenyl)-N-phenylamino]b
  • Carbazole derivatives include, for example, 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9- phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]- 9-phenylcarbazole (abbreviation: PCzPCN1), 4,4′-di(N-carbazolyl)biphenyl (abbreviation: CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB) ), 9-[4-(10-phenyl-9-anthracenyl
  • aromatic hydrocarbons examples include 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl) anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9, 10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl) -1-naphthyl)anthracene (abbreviation: DM
  • aromatic hydrocarbons having a vinyl group examples include 4,4′-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi), 9,10-bis[4-(2,2- Diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA) and the like can be used.
  • DPVBi 4,4′-bis(2,2-diphenylvinyl)biphenyl
  • DPVPA 9,10-bis[4-(2,2- Diphenylvinyl)phenyl]anthracene
  • polymer compounds include poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4- ⁇ N'-[4- (4-diphenylamino)phenyl]phenyl-N′-phenylamino ⁇ phenyl)methacrylamide] (abbreviation: PTPDMA), poly[N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl ) benzidine] (abbreviation: Poly-TPD), etc. can be used.
  • PVK poly(N-vinylcarbazole)
  • PVTPA poly(4-vinyltriphenylamine)
  • PTPDMA poly[N-(4- ⁇ N'-[4- (4-diphenylamino)phenyl]phenyl-N′-phenylamino ⁇ phenyl)methacrylamide]
  • a substance having any one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton can be suitably used as a hole-transporting material of the composite material.
  • a substance comprising an aromatic amine having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine having a naphthalene ring, or an aromatic monoamine having a 9-fluorenyl group bonded to the nitrogen of the amine via an arylene group. can be used for materials having hole-transport properties in composite materials. Note that the reliability of the light-emitting device can be improved by using a substance having an N,N-bis(4-biphenyl)amino group.
  • BnfABP N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine
  • BnfABP N,N-bis( 4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine
  • BBABnf 4,4′-bis(6-phenylbenzo[b]naphtho[1,2 -d]furan-8-yl)-4′′-phenyltriphenylamine
  • BnfBB1BP N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6- amine
  • BBABnf(6) N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine
  • layer 106X1 (i, j) a material having an electron-transport property can be used for the layer 106X1(i,j).
  • layer 106X1(i,j) can be referred to as an electron relay layer.
  • Using layer 106X1(i,j) allows the layers contacting the anode side of layer 106X1(i,j) to be moved away from the layers contacting the cathode side of layer 106X1(i,j). Interactions between layers on the anode side of layer 106X1(i,j) and layers on the cathode side of layer 106X1(i,j) can be mitigated.
  • electrons can be smoothly supplied to the layer in contact with the anode side of the layer 106X1(i, j).
  • a material with a LUMO level can be preferably used for layer 106X1(i,j).
  • the layer 106X1 (i, j).
  • a material having unpaired electrons can be used.
  • a phthalocyanine-based material can be used for the layer 106X1(i, j).
  • metal complexes with metal-oxygen bonds and aromatic ligands can be used for layer 106X1(i,j).
  • Unit 103X2(i, j) has a single-layer structure or a laminated structure.
  • unit 103X2(i,j) comprises layer 111X2(i,j), layer 112X2(i,j) and layer 113X2(i,j) (see FIG. 1).
  • Unit 103X(i, j) has a function of emitting light ELX.
  • Layer 111X2(i,j) comprises the region sandwiched between layer 112X2(i,j) and layer 113X2(i,j), and layer 112X2(i,j) comprises intermediate layer 106X(i,j) and layer 106X2(i,j).
  • Layer 113X2(i,j) comprises the region sandwiched between electrode 552X(i,j) and layer 111X2(i,j).
  • layers selected from functional layers such as a light-emitting layer, a hole-transport layer, an electron-transport layer, and a carrier-block layer can be used in unit 103X2(i,j).
  • a layer selected from functional layers such as a hole injection layer, an electron injection layer, an exciton blocking layer, and a charge generation layer can be used for the unit 103X2(i,j).
  • the same configuration as used for the unit 103X(i,j) can be used for the unit 103X2(i,j).
  • a configuration in which the thickness of a part of the unit 103X(i, j) is changed can be used for the unit 103X2(i, j). This makes it possible to adjust the distance from the reflective electrode or the like to the layer 111X2(i,j). Further, by utilizing the interference phenomenon between the light reflected by the electrodes and the like and the light emitted from the layer 111X2(i,j), the amplitude can be strengthened. Also, a microresonator structure (microcavity) can be constructed.
  • a configuration for emitting light having the same hue as the light ELX emitted by the unit 103X(i, j) is used for the unit 103X2(i, j). be able to.
  • a configuration different from that used for layer 111X(i,j) can be used for layer 111X2(i,j).
  • one can use a fluorescent emitting material and the other can use a phosphorescent emitting material.
  • a configuration different from that employed for the layer 113X(i,j) can be used for the layer 113X2(i,j).
  • Unit 103X2 (i, j) can be configured to emit light having a different hue from the light ELX emitted by the unit 103X(i,j).
  • a unit 103X(i, j) that emits yellow light and a unit 103X2(i, j) that emits blue light can be used.
  • a unit 103X(i, j) that emits red light and green light and a unit 103X2(i, j) that emits blue light can be used.
  • a light emitting device that emits white light can be provided.
  • the light emitting device 550X(i,j) includes an electrode 551X(i,j), an electrode 552X(i,j), a unit 103X(i,j), a unit 103X2(i,j), an intermediate layer 106X(i,j) and layers 105X2(i,j).
  • Layer 105X2(i,j) comprises the region sandwiched between unit 103X(i,j) and intermediate layer 106X(i,j).
  • layer 105X2 (i, j) ⁇ Configuration example of layer 105X2 (i, j)>>
  • a material with electron injection properties can be used for layer 105X2(i,j).
  • the layer 105X2(i, j) can be called an electron injection layer.
  • layer 105X2(i,j) contains unpaired electrons, which are 1 ⁇ 10 16 spins/cm 3 or more and 1 ⁇ 10 18 spins/cm 3 using electron spin resonance (ESR). It can be observed at the following spin densities. Note that the unpaired electron has a g value in the range of 2.003 to 2.004.
  • the unpaired electrons can be observed with an initial spin density of 50% or more after 24 hours in the atmosphere using an electron spin resonance apparatus (ESR).
  • ESR electron spin resonance apparatus
  • the elapsed time can be the time after the sealing structure of the manufactured light-emitting device is destroyed.
  • the degree of freedom of processing steps that can be applied after forming the layer 105X2(i,j) can be increased.
  • the resistance to the heat treatment process can be enhanced.
  • the resistance to the chemical solution treatment process can be enhanced.
  • photolithography is used to form intermediate layer 106X(i,j) and layer 105X2(i,j). ) can be processed into a predetermined shape.
  • the unit 103X2(i, j) after forming the unit 103X2(i, j), photolithography is used to form the unit 103X2(i, j), the intermediate layer 106X(i, j), the layer 105X2(i, j) and the unit 103X2(i,j) can be processed into a predetermined shape. As a result, it is possible to provide a novel display device with excellent convenience, usefulness, or reliability.
  • a mixed material containing an electron-transporting organic compound and a donor inorganic compound can be used for the layer 105X2(i,j).
  • An organic compound having a lone pair of electrons can be used as an organic compound having an electron-transporting property.
  • the organic compound interacts with an inorganic compound having a donor property to form a half-occupied orbital.
  • BPhen 4,7-diphenyl-1,10-phenanthroline
  • NBPhen 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline
  • HATNA diquinoxalino [2,3-a:2′,3′-c]phenazine
  • TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3 , 5-triazine
  • TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3 , 5-triazine
  • an organic compound having an electron-deficient heteroaromatic ring can be used for the layer 105X2(i,j).
  • a compound having at least one of a pyridine ring, diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and triazine ring can be used.
  • an organic compound having a lowest unoccupied molecular orbital (LUMO) level in the range of ⁇ 3.6 eV to ⁇ 2.3 eV can be used for the layer 105X2(i,j).
  • LUMO level and LUMO level of an organic compound can generally be estimated by cyclic voltammetry (CV), photoelectron spectroscopy, light absorption spectroscopy, inverse photoelectron spectroscopy, or the like.
  • An inorganic compound containing a metal element and oxygen can be used as the inorganic compound having a donor property.
  • inorganic compounds containing alkali metals and oxygen can be used.
  • inorganic compounds containing alkaline earth metals and oxygen can also be used.
  • an inorganic compound containing Li and oxygen can be preferably used.
  • the driving voltage of the light emitting device can be suppressed.
  • power consumption of the display device can be suppressed.
  • Light emitting device 550X(i,j) has electrodes 551X(i,j), electrodes 552X(i,j), units 103X(i,j), and layers 104X(i,j).
  • Layer 104X(i,j) comprises the region sandwiched between electrode 551X(i,j) and unit 103X(i,j).
  • Electrode 551X (i, j) a conductive material can be used for electrodes 551X(i,j).
  • a film containing a metal, an alloy, or a conductive compound can be used as the electrode 551X(i,j) in a single layer or a stack of layers.
  • a film that efficiently reflects light can be used for the electrodes 551X(i,j).
  • an alloy containing silver, copper, or the like, an alloy containing silver, palladium, or the like, or a metal film such as aluminum can be used for the electrodes 551X(i,j).
  • a metal film that transmits part of the light and reflects the other part of the light can be used for the electrode 551X(i, j).
  • a microresonator structure microcavity
  • light with a predetermined wavelength can be extracted more efficiently than other light.
  • light with a narrow half width of the spectrum can be extracted. Or you can take out bright colors of light.
  • a film that transmits visible light can be used for the electrodes 551X(i, j).
  • a metal film, an alloy film, a conductive oxide film, or the like thin enough to transmit light can be used as the electrode 551X(i, j) in a single layer or a stacked layer.
  • a material having a work function of 4.0 eV or more can be suitably used for the electrodes 551X(i, j).
  • a conductive oxide containing indium can be used.
  • indium oxide, indium oxide-tin oxide (abbreviation: ITO), indium oxide-tin oxide containing silicon or silicon oxide (abbreviation: ITSO), indium oxide-zinc oxide, tungsten oxide and zinc oxide are included.
  • IWZO Indium oxide
  • a conductive oxide containing zinc can be used.
  • zinc oxide, gallium-added zinc oxide, aluminum-added zinc oxide, or the like can be used.
  • gold Au
  • platinum Pt
  • nickel Ni
  • tungsten W
  • Cr chromium
  • Mo molybdenum
  • iron Fe
  • Co cobalt
  • Cu copper
  • palladium Pd
  • a nitride of a metal material eg, titanium nitride
  • graphene can be used.
  • layer 104X (i, j) ⁇ Configuration example of layer 104X (i, j)>>
  • a material with hole injection properties can be used for layer 104X(i,j).
  • the layer 104X(i,j) can be referred to as a hole injection layer.
  • a substance having acceptor properties can be used for the layer 104X(i, j).
  • a composite material containing multiple substances can be used for layer 104X(i,j). This makes it easier to inject holes from the electrodes 551X(i, j), for example.
  • the driving voltage of the light emitting device can be reduced.
  • a substance having an acceptor property that can be used for the layer 106X2(i,j) can be used for the layer 104X(i,j).
  • a composite material containing a substance having an acceptor property and a material having a hole-transport property can be used for the layer 104X(i, j).
  • the composite material that can be used for layer 106X2(i,j) can be used for layer 104X(i,j).
  • the layer 106X2(i, j) containing the composite material has an electrical resistivity of 1 ⁇ 10 2 [ ⁇ cm] or more and 1 ⁇ 10 8 [ ⁇ cm] or less.
  • the composite material is used for the layer 104X(i,j). It can be used preferably.
  • a composite material of a material having a hole-transporting property having a relatively deep HOMO level HM1 of ⁇ 5.7 eV or more and ⁇ 5.4 eV or less and a substance having an acceptor property is applied to the layer 104X(i, j). can be used. Thereby, the reliability of the light emitting device can be improved.
  • the mixed material is used for the layer 113X(i, j)
  • the composite material is used for the layer 104X(i, j)
  • the relative deep HOMO level HM1 is ⁇ 0.2 eV or more and 0 eV
  • a material having a HOMO level HM2 in the following range can be used for the layer 112X(i,j). Thereby, it may be possible to further improve the reliability of the light-emitting device.
  • a composite material containing a substance having an acceptor property, a material having a hole transport property, and an alkali metal fluoride or an alkaline earth metal fluoride can be used as a material having a hole injection property.
  • a composite material in which the atomic ratio of fluorine atoms is 20% or more can be preferably used. This can reduce the refractive index of layer 104X(i,j).
  • a low refractive index layer can be formed inside the light emitting device.
  • the external quantum efficiency of the light emitting device can be improved.
  • the light emitting device 550X(i,j) has an electrode 551X(i,j), an electrode 552X(i,j), a unit 103X2(i,j), and a layer 105X(i,j). .
  • Electrode 552X(i,j) comprises an area overlapping electrode 551X(i,j), and unit 103X2(i,j) is sandwiched between electrode 552X(i,j) and electrode 551X(i,j). Have an area.
  • Layer 105X(i,j) also comprises a region sandwiched between electrode 552X(i,j) and unit 103X2(i,j).
  • Electrode 552X (i, j) a conductive material can be used for electrodes 552X(i,j).
  • films containing metals, alloys, or conductive compounds can be used for the electrodes 552X(i,j) in a single layer or multiple layers.
  • materials that can be used for electrodes 551X(i,j) can be used for electrodes 552X(i,j).
  • a material having a smaller work function than that of the electrode 551X(i,j) can be suitably used for the electrode 552X(i,j).
  • a material having a work function of 3.8 eV or less is preferable.
  • elements belonging to group 1 of the periodic table of elements elements belonging to group 2 of the periodic table of elements, rare earth metals, and alloys containing these can be used for the electrodes 552X(i,j).
  • lithium (Li), cesium (Cs), etc., magnesium (Mg), calcium (Ca), strontium (Sr), etc., europium (Eu), ytterbium (Yb), etc. and alloys containing these (MgAg, AlLi) can be used for the electrodes 552X(i,j).
  • layer 105X (i, j) ⁇ Configuration example of layer 105X (i, j)>>
  • a material with electron injection properties can be used for the layer 105X(i,j).
  • the layer 105X(i,j) can be referred to as an electron injection layer.
  • a substance having a donor property can be used for the layer 105X(i, j).
  • a material in which a substance having a donor property and a material having an electron-transporting property are combined can be used for the layer 105X(i, j).
  • electrides can be used for layer 105X(i,j). This makes it easier to inject electrons from the electrodes 552X(i, j), for example.
  • a material with a high work function as well as a material with a low work function can be used for the electrodes 552X(i,j).
  • the material used for the electrodes 552X(i, j) can be selected from a wide range of materials regardless of the work function. Specifically, Al, Ag, ITO, indium oxide-tin oxide containing silicon or silicon oxide, or the like can be used for the electrodes 552X(i, j). Alternatively, the driving voltage of the light emitting device can be reduced.
  • alkali metals, alkaline earth metals, rare earth metals, or compounds thereof can be used as the substance having a donor property.
  • an organic compound such as tetrathianaphthacene (abbreviation: TTN), nickelocene, decamethylnickelocene, or the like can be used as a substance having a donor property.
  • Alkali metal compounds include lithium oxide, lithium fluoride (LiF), cesium fluoride (CsF), lithium carbonate, cesium carbonate, 8-hydroxyquinolinato-lithium (abbreviation : Liq), etc. can be used.
  • Calcium fluoride (CaF 2 ) and the like can be used as alkaline earth metal compounds (including oxides, halides, and carbonates).
  • a material in which a plurality of kinds of substances are combined can be used as the material having an electron-injecting property.
  • a substance having a donor property and a material having an electron transport property can be used for a composite material.
  • a metal complex or an organic compound having a ⁇ -electron-deficient heteroaromatic ring skeleton can be used as the electron-transporting material.
  • an electron-transporting material that can be used for the unit 103X(i, j) can be used for the composite material.
  • a microcrystalline alkali metal fluoride and a material having an electron-transporting property can be used for the composite material.
  • a microcrystalline alkaline earth metal fluoride and a material having an electron-transporting property can be used for the composite material.
  • a composite material containing 50 wt % or more of an alkali metal fluoride or an alkaline earth metal fluoride can be preferably used.
  • a composite material containing an organic compound having a bipyridine skeleton can be preferably used. Thereby, the refractive index of the layer 105 can be lowered. Alternatively, the external quantum efficiency of the light emitting device can be improved.
  • a composite material including a first organic compound with a lone pair of electrons and a first metal can be used for layer 105X(i,j). Further, it is preferable that the sum of the number of electrons of the first organic compound and the number of electrons of the first metal is an odd number. Further, the molar ratio of the first metal to 1 mol of the first organic compound is preferably 0.1 or more and 10 or less, more preferably 0.2 or more and 2 or less, and still more preferably 0.2 or more and 0.8 or less. be.
  • the first organic compound having the lone pair of electrons can interact with the first metal to form a singly occupied molecular orbital (SOMO).
  • SOMO singly occupied molecular orbital
  • the spin density measured using an electron spin resonance method is preferably 1 ⁇ 10 16 spins/cm 3 or more, more preferably 5 ⁇ 10 16 spins/cm 3 or more, and still more preferably Composite materials with 1 ⁇ 10 17 spins/cm 3 or greater can be used for layer 105X(i,j).
  • Organic compound with lone pair of electrons materials with electron-transporting properties can be used in organic compounds with lone pairs of electrons.
  • a compound having an electron-deficient heteroaromatic ring can be used.
  • a compound having at least one of a pyridine ring, diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and triazine ring can be used. Thereby, the driving voltage of the light emitting device can be reduced.
  • the lowest unoccupied molecular orbital (LUMO) of the organic compound having an unshared electron pair is preferably ⁇ 3.6 eV or more and ⁇ 2.3 eV or less.
  • the HOMO level and LUMO level of an organic compound can generally be estimated by cyclic voltammetry (CV), photoelectron spectroscopy, light absorption spectroscopy, inverse photoelectron spectroscopy, or the like.
  • BPhen 4,7-diphenyl-1,10-phenanthroline
  • NBPhen 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline
  • HATNA diquinoxalino [2,3-a:2′,3′-c]phenazine
  • TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3 , 5-triazine
  • TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3 , 5-triazine
  • copper phthalocyanine can be used in organic compounds with lone pairs of electrons. Note that the number of electrons in copper phthalocyanine is an odd number.
  • group metals aluminum (Al) and indium (In) are odd numbered groups in the periodic table.
  • Elements of Group 11 have a lower melting point than Group 7 or Group 9 elements, and are suitable for vacuum deposition. Ag is particularly preferred because of its low melting point.
  • the adhesion of the layers 105X(i, j) and the electrodes 552X(i, j) can be improved.
  • the composite material of the first metal and the first organic compound which is an even group in the periodic table, is added to layer 105X(i, j).
  • Iron (Fe) a Group 8 metal, is an even group in the periodic table.
  • Electrode For example, a material in which electrons are added to a mixed oxide of calcium and aluminum at a high concentration, or the like can be used as an electron-injecting material.
  • FIG. 2 illustrates a structure of a display device of one embodiment of the present invention.
  • FIG. 2A is a top view illustrating a display device of one embodiment of the present invention
  • FIG. 2B is a top view illustrating part of the display device.
  • FIG. 3 is a circuit diagram illustrating a pixel of a display device of one embodiment of the present invention.
  • FIG. 4 is a cross-sectional view illustrating the structure of a display device of one embodiment of the present invention.
  • FIG. 4A is a diagram for explaining cross sections along the cutting lines a1-a2, the cutting lines a3-a4, and a pair of pixels 703(i, j) shown in FIG. 2A.
  • FIG. 4B is a cross-sectional view illustrating a transistor that can be used in the display device of one embodiment of the present invention.
  • FIG. 5 illustrates a structure of a display device of one embodiment of the present invention.
  • FIG. 5A is a perspective view illustrating part of a display device of one embodiment of the present invention
  • FIG. 5B is a cross-sectional view of the pixel taken along cutting lines Y1-Y2 and Y3-Y4 in FIG. 5A
  • FIG. 5C is a cross-sectional view of the pixel shown in FIG. 5A taken along the line X1-X2;
  • FIG. 5A is a perspective view illustrating part of a display device of one embodiment of the present invention
  • FIG. 5B is a cross-sectional view of the pixel taken along cutting lines Y1-Y2 and Y3-Y4 in FIG. 5A
  • FIG. 5C. 5B is a cross-sectional view of the pixel shown in FIG. 5A taken along the line X1-X2;
  • FIG. 5A is a perspective view illustrating part of a display device of one embodiment of the present invention
  • FIG. 6 is a cross-sectional view illustrating the structure of a set of pixels in the display device of one embodiment of the present invention.
  • a variable whose value is an integer of 1 or more may be used as a code.
  • (p) which includes a variable p that takes an integer value of 1 or more, may be used as part of the code specifying one of the maximum p components.
  • a device manufactured using a metal mask or FMM may be referred to as a device with an MM (metal mask) structure.
  • a device manufactured without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure.
  • a structure in which a light-emitting layer is separately formed or a light-emitting layer is separately painted in each color light-emitting device is referred to as SBS (Side By Side) structure.
  • SBS Side By Side
  • a light-emitting device capable of emitting white light is sometimes referred to as a white light-emitting device.
  • a white light emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.
  • light-emitting devices can be broadly classified into a single structure and a tandem structure.
  • a single-structure device preferably has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers.
  • the light-emitting unit preferably includes one or more light-emitting layers.
  • the luminescent color of the first luminescent layer and the luminescent color of the second luminescent layer have a complementary color relationship, it is possible to obtain a configuration in which the entire light emitting device emits white light.
  • a device with a tandem structure preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit includes one or more light-emitting layers.
  • each light-emitting unit includes one or more light-emitting layers.
  • a structure in which white light emission is obtained by combining light from the light emitting layers of a plurality of light emitting units may be employed. Note that the structure for obtaining white light emission is the same as the structure of the single structure.
  • the white light emitting device when comparing the white light emitting device (single structure or tandem structure) and the light emitting device having the SBS structure, the light emitting device having the SBS structure can consume less power than the white light emitting device. If it is desired to keep power consumption low, it is preferable to use a light-emitting device with an SBS structure. On the other hand, the white light emitting device is preferable because the manufacturing process is simpler than that of the SBS structure light emitting device, so that the manufacturing cost can be lowered or the manufacturing yield can be increased.
  • the display device 700 comprises a display area 231, which has a set of pixels 703(i,j) (see FIG. 2A). It also comprises a set of pixels 703(i+1,j) adjacent to the set of pixels 703(i,j) (see FIG. 2B).
  • display area 231 comprises a set of 500 or more pixels per inch. It also comprises a group of pixels of 1000 or more, preferably 5000 or more, more preferably 10000 or more pixels per inch. As a result, for example, when used in a goggle-type display device, the screen-door effect can be reduced.
  • the display area 231 comprises a plurality of pixels.
  • the display area 231 has, for example, 7600 or more pixels in the row direction and 4300 or more pixels in the column direction. Specifically, 7680 pixels are provided in the row direction and 4320 pixels are provided in the column direction. Thereby, a fine image can be displayed.
  • ⁇ Configuration example 1 of pixel 703 (i, j)>> Multiple pixels can be used for pixel 703(i,j) (see FIG. 2B). For example, a plurality of pixels displaying colors with different hues can be used. Note that each of the plurality of pixels can be called a sub-pixel. Alternatively, a set of sub-pixels can be called a pixel.
  • the colors displayed by the plurality of pixels can be subjected to additive color mixture or subtractive color mixture.
  • hues of colors that cannot be displayed by individual pixels can be displayed.
  • a pixel 702B (i, j) displaying blue, a pixel 702G (i, j) displaying green, and a pixel 702R (i, j) displaying red are used as the pixel 703 (i, j). be able to. Also, each of the pixel 702B(i,j), the pixel 702G(i,j), and the pixel 702R(i,j) can be called a sub-pixel.
  • a pixel displaying white or the like can be added to the above set and used for the pixel 703 (i, j).
  • a pixel that displays cyan, a pixel that displays magenta, and a pixel that displays yellow can be used for the pixel 703 (i, j).
  • a pixel that emits infrared rays can be added to the above set and used for the pixel 703(i,j).
  • a pixel that emits light including light with a wavelength of 650 nm to 1000 nm can be used as the pixel 703(i,j).
  • the display device 700 includes light emitting devices 550G(i,j) and light emitting devices 550B(i,j) (see FIG. 4A).
  • the display device 700 also includes a base material 510 , a functional layer 520 , an insulating film 705 and a base material 770 .
  • Light emitting device 550G(i,j) and light emitting device 550B(i,j) are sandwiched between substrate 770 and functional layer 520.
  • Functional layer 520 is sandwiched between substrate 770 and substrate 510 .
  • the insulating film 705 is sandwiched between the functional layer 520 and the base material 770, and the insulating film 705 has a function of bonding the functional layer 520 and the base material 770 together.
  • Functional layer 520 includes pixel circuits 530G(i,j) and pixel circuits 530B(i,j).
  • Pixel circuit 530G(i,j) is electrically connected to light emitting device 550G(i,j) through opening 591G
  • pixel circuit 530B(i,j) is electrically connected to light emitting device 550B(i,j). They are electrically connected through the opening 591B.
  • the display device displays information through the substrate 770 (see FIG. 4A).
  • the light emitting device 550G(i,j) emits light in a direction where the functional layer 520 is not arranged.
  • the light-emitting device 550G(i, j) can be called a top-emission light-emitting device.
  • the base material 510 includes a drive circuit GD and terminals 519B. Further, although not shown, a drive circuit SD is provided.
  • the drive circuit GD has a function of supplying a first selection signal and a second selection signal.
  • the drive circuit GD is electrically connected to the conductive film G1(i) to supply a first selection signal, and is electrically connected to the conductive film G2(i) to supply a second selection signal.
  • the drive circuit SD has a function of supplying an image signal and a control signal, the control signal including a first level and a second level.
  • the drive circuit SD is electrically connected to the conductive film S1g(j) to supply an image signal, and electrically connected to the conductive film S2g(j) to supply a control signal.
  • the display device 700 includes a conductive film G1(i), a conductive film G2(i), a conductive film S1g(j), a conductive film S2g(j), a conductive film ANO, and a conductive film VCOM2 (FIG. 3).
  • the conductive film G1(i) is supplied with a first selection signal
  • the conductive film G2(i) is supplied with a second selection signal
  • the conductive film S1g(j) is supplied with an image signal, and is electrically conductive.
  • Membrane S2g(j) is supplied with a control signal.
  • a set of pixels 703(i,j) comprises pixels 702G(i,j) (see FIG. 2B).
  • Pixel 702G(i,j) comprises pixel circuit 530G(i,j) and light emitting device 550G(i,j) (see FIG. 3).
  • the pixel circuit 530G(i, j) is supplied with the first selection signal, and the pixel circuit 530G(i,j) acquires the image signal based on the first selection signal.
  • the conductive film G1(i) can be used to supply the first select signal (see FIG. 3).
  • an image signal can be supplied using the conductive film S1g(j). Note that the operation of supplying the first selection signal and causing the pixel circuit 530G(i, j) to acquire the image signal can be referred to as “writing”.
  • the pixel circuit 530G(i, j) includes a switch SW21, a switch SW22, a transistor M21, a capacitor C21 and a node N21 (see FIG. 3). Also, the pixel circuit 530G(i, j) includes a node N22, a capacitor C22 and a switch SW23.
  • the transistor M21 has a gate electrode electrically connected to the node N21, a first electrode electrically connected to the light emitting device 550G(i,j), and a second electrode electrically connected to the conductive film ANO. electrodes.
  • the switch SW21 has a first terminal electrically connected to the node N21, a second terminal electrically connected to the conductive film S1g(j), and based on the potentials of the conductive film G1(i), and a gate electrode having a function of controlling a conducting state or a non-conducting state.
  • the switch SW22 has a first terminal electrically connected to the conductive film S2g(j) and a gate electrode having a function of controlling a conductive state or a non-conductive state based on the potential of the conductive film G2(i). , provided.
  • Capacitor C21 includes a conductive film electrically connected to node N21 and a conductive film electrically connected to the second electrode of switch SW22.
  • the image signal can be stored in the node N21.
  • the potential of the node N21 can be changed using the switch SW22.
  • the intensity of light emitted by the light emitting device 550G(i,j) can be controlled using the potential of the node N21.
  • a bottom-gate transistor or a top-gate transistor can be used for the functional layer 520 .
  • a transistor can be used as a switch.
  • the transistor includes a semiconductor film 508, a conductive film 504, a conductive film 512A, and a conductive film 512B (see FIG. 4B).
  • a transistor is formed, for example, on the insulating film 501C.
  • the semiconductor film 508 includes a region 508A electrically connected to the conductive film 512A and a region 508B electrically connected to the conductive film 512B.
  • Semiconductor film 508 comprises region 508C between regions 508A and 508B.
  • the conductive film 504 has a region overlapping with the region 508C, and the conductive film 504 functions as a gate electrode.
  • the insulating film 506 has a region sandwiched between the semiconductor film 508 and the conductive film 504 .
  • the insulating film 506 has a function of a gate insulating film.
  • the conductive film 512A has one of the function of the source electrode and the function of the drain electrode, and the conductive film 512B has the other of the function of the source electrode and the function of the drain electrode.
  • the conductive film 524 can be used for a transistor.
  • the conductive film 524 has a region that sandwiches the semiconductor film 508 with the conductive film 504 .
  • the conductive film 524 has a function of a second gate electrode.
  • the insulating film 501D is sandwiched between the semiconductor film 508 and the conductive film 524 and functions as a second gate insulating film.
  • a semiconductor film used for a driver circuit transistor can be formed in the step of forming the semiconductor film used for the pixel circuit transistor.
  • a semiconductor film having the same composition as a semiconductor film used for a transistor in a pixel circuit can be used for a driver circuit.
  • a semiconductor containing a Group 14 element can be used for the semiconductor film 508 .
  • a semiconductor containing silicon can be used for the semiconductor film 508 .
  • Hydroated amorphous silicon can be used for semiconductor film 508 .
  • microcrystalline silicon or the like can be used for the semiconductor film 508 . This makes it possible to provide a functional panel with less display unevenness than a functional panel using polysilicon for the semiconductor film 508, for example. Alternatively, it is easy to increase the size of the function panel.
  • polysilicon can be used for the semiconductor film 508 .
  • the field-effect mobility of the transistor can be higher than that of a transistor using amorphous silicon hydride for the semiconductor film 508, for example.
  • driving capability can be higher than that of a transistor using hydrogenated amorphous silicon for the semiconductor film 508, for example.
  • the aperture ratio of a pixel can be improved as compared with a transistor using hydrogenated amorphous silicon for the semiconductor film 508 .
  • the reliability of the transistor can be higher than that of a transistor using hydrogenated amorphous silicon for the semiconductor film 508 .
  • the temperature required for manufacturing a transistor can be lower than, for example, a transistor using single crystal silicon.
  • a semiconductor film used for a transistor in a driver circuit can be formed in the same process as a semiconductor film used for a transistor in a pixel circuit.
  • the driver circuit can be formed over the same substrate as the substrate forming the pixel circuit. Alternatively, the number of parts constituting the electronic device can be reduced.
  • Single crystal silicon can be used for the semiconductor film 508 .
  • the definition can be improved, for example, as compared with a functional panel using hydrogenated amorphous silicon for the semiconductor film 508 .
  • smart glasses or head-mounted displays can be provided.
  • a metal oxide can be used for the semiconductor film 508 .
  • the pixel circuit can hold an image signal for a longer time than, for example, a pixel circuit using a transistor whose semiconductor film is made of silicon.
  • the selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once a minute, while suppressing flicker. As a result, fatigue accumulated in the user of the information processing apparatus can be reduced. In addition, power consumption associated with driving can be reduced.
  • a transistor using an oxide semiconductor can be used.
  • an oxide semiconductor containing indium, an oxide semiconductor containing indium, gallium, and zinc, or an oxide semiconductor containing indium, gallium, zinc, and tin can be used for the semiconductor film.
  • a transistor whose off-state leakage current is smaller than that of a transistor using silicon for a semiconductor film can be used.
  • a transistor including an oxide semiconductor for a semiconductor film can be used for a switch or the like.
  • the potential of the floating node can be held for a longer time than a circuit using a transistor using silicon as a switch.
  • ⁇ Structure Example 3 of Semiconductor Film 508>> compound semiconductors can be used as semiconductors for transistors. Specifically, a semiconductor containing gallium arsenide can be used.
  • organic semiconductors can be used as semiconductors in transistors.
  • an organic semiconductor containing polyacenes or graphene can be used for the semiconductor film.
  • the light emitting device 550G(i, j) is electrically connected to the pixel circuit 530G(i,j) (see FIG. 3). Note that the light emitting device 550G(i, j) operates based on the potential of the node N21.
  • Light emitting device 550G(i,j) comprises electrodes 551G(i,j) and electrodes 552G(i,j).
  • the electrode 551G(i, j) is electrically connected to the pixel circuit 530G(i, j), and the electrode 552G(i, j) is electrically connected to the conductive film VCOM2.
  • an organic electroluminescence element for example, an organic electroluminescence element, an inorganic electroluminescence element, a light-emitting diode, a QDLED (Quantum Dot LED), or the like can be used for the light-emitting device 550G(i,j).
  • a QDLED Quantum Dot LED
  • a display device 700 described in this embodiment has a set of pixels 703 (i, j) (see FIG. 5A).
  • the set of pixels 703(i,j) comprises pixel 702G(i,j), pixel 702B(i,j) and pixel 702R(i,j).
  • Pixel 702G(i,j) comprises light emitting device 550G(i,j)
  • pixel 702B(i,j) comprises light emitting device 550B(i,j)
  • pixel 702R(i,j) comprises light emitting device 550R(i,j). i, j).
  • the light emitting devices can be arranged at a pitch of 2.8 ⁇ m in the direction of the cutting line X1-X2. Also, the light emitting devices can be arranged at a pitch of 8.4 ⁇ m in the Y3-Y4 direction of the cutting line. Also, a gap of 0.55 ⁇ m can be provided between the light emitting devices. Thereby, the definition of the display device can be increased. Also, the aperture ratio can be increased.
  • Light-emitting device 550G(i,j) includes electrode 551G(i,j), electrode 552G(i,j), unit 103G(i,j), unit 103G2(i,j), intermediate layer 106G(i,j). , layers 105G2(i,j) and layers 104G(i,j) (see FIG. 5B).
  • the conductive film 552 includes electrodes 552G(i, j) and is electrically connected to the conductive film VCOM2.
  • the light emitting device 550B(i, j) has an insulating film 573 between it and the light emitting device 550G(i, j) (see FIG. 5C).
  • insulating inorganic material an insulating organic material, or an insulating composite material containing an inorganic material and an organic material can be used for the insulating film 573 .
  • an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like, or a laminated material obtained by laminating a plurality of films selected from these films can be used for the insulating film 573 .
  • a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, or the like, or a film containing a laminated material in which a plurality of films selected from these are laminated can be used as the insulating film 573 .
  • the silicon nitride film is a dense film and has an excellent function of suppressing the diffusion of impurities.
  • the insulating film 573 can be made of polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, acrylic resin, or the like, or a laminated material or composite material of a plurality of resins selected from these.
  • the insulating film 573 includes an insulating film 573(1) and an insulating film 573(2).
  • an insulating inorganic material can be used for the insulating film 573(1).
  • aluminum oxide can be used for the insulating film 573(1).
  • a dense film formed by chemical vapor deposition, atomic layer deposition (ALD), or the like can be used for the insulating film 573(1).
  • an insulating organic material can be used for the insulating film 573(2).
  • polyimide or acrylic resin can be used for the insulating film 573(2).
  • a photosensitive material can be used for the insulating film 573(2).
  • the display device 700 has a light emitting device 550G(i,j) and a light emitting device 550B(i,j) (see FIGS. 5C and 6). It also has a light emitting device 550R(i,j).
  • Light-emitting device 550G(i,j) includes electrode 551G(i,j), electrode 552G(i,j), unit 103G(i,j), unit 103G2(i,j), intermediate layer 106G(i,j). and layer 105G2(i,j).
  • Unit 103G(i, j) and unit 103G2(i, j) have a configuration for emitting green hue light.
  • the configuration of the light emitting device 550X(i,j) described in Embodiment 1 can be applied to the light emitting device 550G(i,j).
  • the symbol “X” used in the explanation of the light emitting device 550X(i, j) can be read as “G” and used in the explanation of the light emitting device 550G(i, j).
  • Light-emitting device 550B(i,j) includes electrode 551B(i,j), electrode 552B(i,j), unit 103B(i,j), unit 103B2(i,j), intermediate layer 106B(i,j). and layer 105B2(i,j).
  • Unit 103B(i, j) and unit 103B2(i, j) are configured to emit blue hue light.
  • the configuration of the light emitting device 550X(i,j) described in Embodiment 1 can be applied to the light emitting device 550B(i,j).
  • the symbol “X” used in the explanation of the light emitting device 550X(i, j) can be read as “B” and used in the explanation of the light emitting device 550B(i, j).
  • Light emitting device 550R(i,j) includes electrodes 551R(i,j), electrodes 552R(i,j), units 103R(i,j), units 103R2(i,j), intermediate layers 106R(i,j). and layer 105R2(i,j).
  • Unit 103R(i, j) and unit 103R2(i, j) are configured to emit red hue light.
  • the configuration of the light emitting device 550X(i,j) described in Embodiment 1 can be applied to the light emitting device 550R(i,j).
  • the symbol “X” used in the explanation of the light emitting device 550X(i, j) can be read as “R” and used in the explanation of the light emitting device 550R(i, j).
  • Intermediate layer 106B(i,j) has gap 106GB(i,j) with intermediate layer 106G(i,j) (see FIG. 6). Thereby, the current flowing between intermediate layer 106G(i, j) and intermediate layer 106B(i, j) can be suppressed. Also, it is possible to suppress the occurrence of the crosstalk phenomenon between the light emitting device 550G(i, j) and the light emitting device 550B(i, j).
  • the intermediate layer 106R(i,j) has a gap 106RG(i,j) with the intermediate layer 106G(i,j). Thereby, the current flowing between intermediate layer 106R(i, j) and intermediate layer 106G(i, j) can be suppressed. It is possible to suppress the occurrence of the crosstalk phenomenon between the light emitting device 550R(i, j) and the light emitting device 550G(i, j).
  • Layer 105B2(i,j) has a gap 105GB2(i,j) with layer 105G2(i,j) (see FIG. 6).
  • Layer 105R2(i,j) also includes gap 105RG2(i,j) with layer 105G2(i,j).
  • Layer 104B(i,j) has a gap 104GB(i,j) with layer 104G(i,j) (see FIG. 6). Thereby, the current flowing between the layer 104G(i, j) and the layer 104B(i, j) can be suppressed. Also, it is possible to suppress the occurrence of the crosstalk phenomenon between the light emitting device 550G(i, j) and the light emitting device 550B(i, j).
  • Layer 104R(i,j) also has a gap 104RG(i,j) with layer 104G(i,j). Thereby, the current flowing between the layer 104R(i, j) and the layer 104G(i, j) can be suppressed. Also, it is possible to suppress the occurrence of the crosstalk phenomenon between the light emitting device 550R(i, j) and the light emitting device 550G(i, j).
  • FIG. 7 is a block diagram illustrating the structure of a display device of one embodiment of the present invention.
  • FIG. 8 is a block diagram illustrating the configuration of the display unit shown in FIG. 7.
  • FIG. 8 is a block diagram illustrating the configuration of the display unit shown in FIG. 7.
  • FIG. 9 is a block diagram illustrating the structure of a display device of one embodiment of the present invention.
  • FIG. 10 is a block diagram illustrating the configuration of the pixel shown in FIG. 9.
  • FIG. 10 is a block diagram illustrating the configuration of the pixel shown in FIG. 9.
  • FIG. 11 is a block diagram illustrating the structure of a display device of one embodiment of the present invention.
  • FIG. 12A is a flowchart relating to the correction method
  • FIG. 12B is a schematic diagram explaining the correction method.
  • FIG. 7 shows a block diagram for explaining each configuration of the display device 10. As shown in FIG.
  • the display device has a drive circuit 40 , a functional circuit 50 and a display section 60 .
  • the drive circuit 40 has, for example, a gate driver 41 and a source driver 42 .
  • the gate driver 41 has a function of driving a plurality of gate lines GL for outputting signals to the pixel circuits 62R, 62G, 62B.
  • the source driver 42 has a function of driving a plurality of source lines SL for outputting signals to the pixel circuits 62R, 62G, 62B.
  • the drive circuit 40 supplies voltages for display by the pixel circuits 62R, 62G, and 62B to the pixel circuits 62R, 62G, and 62B via a plurality of wirings.
  • the functional circuit 50 has a CPU 51, and the CPU 51 can be used for arithmetic processing of data.
  • the CPU 51 also has a CPU core 53 .
  • the CPU core 53 has a flip-flop 80 for temporarily holding data used for arithmetic processing.
  • the flip-flop 80 has a plurality of scan flip-flops 81 , and each scan flip-flop 81 is electrically connected to a backup circuit 82 provided in the display section 60 .
  • the flip-flop 80 inputs and outputs scan flip-flop data (backup data) to and from a backup circuit 82 .
  • ⁇ Display unit 60>> 8 and 7 a configuration example of arrangement of the backup circuit 82 and the pixel circuits 62R, 62G, and 62B, which are sub-pixels, in the display section 60 will be described.
  • FIG. 8 illustrates a configuration in which a plurality of pixels 61 are arranged in a matrix in the display section 60 .
  • the pixel 61 has a backup circuit 82 in addition to pixel circuits 62R, 62G, and 62B.
  • both the backup circuit 82 and the pixel circuits 62R, 62G, and 62B can be configured with OS transistors, and therefore can be arranged in the same pixel.
  • the display unit 60 has a plurality of pixels 61 provided with pixel circuits 62R, 62G, 62B and a backup circuit .
  • the backup circuit 82 does not necessarily have to be arranged in the pixel 61 which is the repeating unit, as described with reference to FIG. They can be freely arranged according to the shape of the display section 60, the shapes of the pixel circuits 62R, 62G, and 62B, and the like.
  • FIG. 9 is a block diagram schematically showing a configuration example of a display device 10 which is a display device of one embodiment of the present invention.
  • the display device 10 has a layer 20 and a layer 30 , and the layer 30 can be laminated above the layer 20 , for example. Between layers 20 and 30 there may be an interlayer insulator or a conductor for making electrical connections between the different layers.
  • a transistor provided in the layer 20 can be, for example, a transistor including silicon in a channel formation region (also referred to as a Si transistor), for example, a transistor including single crystal silicon in a channel formation region.
  • a transistor including single crystal silicon in a channel formation region is used as the transistor provided in the layer 20
  • the on current of the transistor can be increased. Therefore, the circuit included in the layer 20 can be driven at high speed, which is preferable.
  • the Si transistor can be formed by microfabrication such that the channel length is 3 nm to 10 nm
  • the display device 10 can be provided with an accelerator such as a CPU or GPU, an application processor, and the like.
  • Layer 20 is provided with drive circuitry 40 and functional circuitry 50 .
  • the Si transistors of layer 20 can increase the on-current of the transistors. Therefore, each circuit can be driven at high speed.
  • the drive circuit 40 has a gate line drive circuit, a source line drive circuit, and the like for driving the pixel circuits 62R, 62G, and 62B.
  • the drive circuit 40 has, for example, a gate line drive circuit and a source line drive circuit for driving the pixels 61 of the display section 60 .
  • the drive circuit 40 includes an LVDS (Low Voltage Differential Signaling) circuit or a D/A (Digital to Analog) conversion circuit having a function as an interface for receiving data such as image data from the outside of the display device 10. may have.
  • the Si transistors of layer 20 can increase the on-current of the transistors.
  • the channel length or channel width of the Si transistor may be varied according to the operating speed of each circuit.
  • the transistors provided in layer 30 may be OS transistors, for example.
  • OS transistor a transistor having an oxide containing at least one of indium, element M (element M is aluminum, gallium, yttrium, or tin), and zinc in a channel formation region is preferably used.
  • Such an OS transistor has a very low off-state current. Therefore, it is particularly preferable to use an OS transistor as a transistor provided in a pixel circuit included in a display portion because analog data written to the pixel circuit can be held for a long time.
  • the layer 30 is provided with a display section 60 provided with a plurality of pixels 61 .
  • the pixel 61 is provided with pixel circuits 62R, 62G, and 62B whose emission of red, green, and blue is controlled.
  • Pixel circuits 62 R, 62 G, and 62 B have functions as sub-pixels of pixel 61 . Since the pixel circuits 62R, 62G, and 62B have OS transistors, analog data written to the pixel circuits can be retained for a long period of time.
  • a backup circuit 82 is provided for each of the pixels 61 included in the layer 30 . Note that the backup circuit may be called a storage circuit or a memory circuit. Also, the backup circuit inputs/outputs data (backup data BD) of the scan flip-flops to/from the flip-flops 80 .
  • FIG. 10A and 10B show a configuration example of the pixel circuit 62 applicable to the pixel circuits 62R, 62G, and 62B, and a light emitting element 70 connected to the pixel circuit 62.
  • FIG. 10A is a diagram showing the connection of each element
  • FIG. 10B is a diagram schematically showing the vertical relationship among the drive circuit 40, the pixel circuit 62, and the light emitting element 70. As shown in FIG.
  • a display element can be replaced with “device” in some cases.
  • a display element, a light-emitting element, and a liquid crystal element can be called a display device, a light-emitting device, and a liquid crystal device.
  • a pixel circuit 62 shown as an example in FIGS. 10A and 10B includes a switch SW21, a switch SW22, a transistor M21, and a capacitor C21.
  • the switch SW21, the switch SW22, and the transistor M21 can be composed of OS transistors.
  • Each of the OS transistors of the switch SW21, the switch SW22, and the transistor M21 preferably has a back gate electrode. can be configured to provide
  • the transistor M21 has a gate electrode electrically connected to the switch SW21, a first electrode electrically connected to the light emitting element 70, and a second electrode electrically connected to the conductive film ANO.
  • the conductive film ANO is wiring for applying a potential for supplying current to the light emitting element 70 .
  • the switch SW21 has a first terminal electrically connected to the gate electrode of the transistor M21, a second terminal electrically connected to the source line SL, and the potential of the gate line GL1. and a gate electrode having a function of controlling a non-conducting state.
  • the switch SW22 is conductive or non-conductive based on the potentials of a first terminal electrically connected to the wiring V0, a second terminal electrically connected to the light emitting element 70, and the gate line GL2. and a gate electrode having a function of controlling the
  • the wiring V0 is a wiring for applying a reference potential and a wiring for outputting the current flowing through the pixel circuit 62 to the driving circuit 40 or the function circuit 50 .
  • Capacitor C21 includes a conductive film electrically connected to the gate electrode of transistor M21 and a conductive film electrically connected to the second electrode of switch SW22.
  • the light emitting element 70 includes a first electrode electrically connected to the first electrode of the transistor M21 and a second electrode electrically connected to the conductive film VCOM.
  • the conductive film VCOM is wiring for applying a potential for supplying current to the light emitting element 70 .
  • the intensity of light emitted from the light emitting element 70 can be controlled according to the image signal applied to the gate electrode of the transistor M21. Further, the amount of current flowing through the light emitting element 70 can be increased by the reference potential of the wiring V0 applied via the switch SW22. Further, by monitoring the amount of current flowing through the wiring V0 with an external circuit, the amount of current flowing through the light emitting element can be estimated. This makes it possible to detect pixel defects and the like.
  • the pixel density of the display device 10 can be 1000 ppi or more, or 5000 ppi or more, or 7000 ppi or more. Therefore, the display device 10 can be a display device for AR or VR, for example, and can be suitably applied to an electronic device such as an HMD in which the distance between the display unit and the user is short.
  • the gate line GL1, the gate line GL2, the conductive film VCOM, the wiring V0, the conductive film ANO, and the source line SL are supplied from the driving circuit 40 below the pixel circuit 62 via wiring.
  • wiring for supplying signals and voltages of the drive circuit 40 may be routed around the periphery of the display section 60 and electrically connected to the pixel circuits 62 arranged in a matrix on the layer 30 .
  • it is effective to provide the gate driver 41 of the driving circuit 40 in the layer 30 . That is, it is effective to use an OS transistor as the transistor of the gate driver 41 .
  • a configuration in which part of the function of the source driver 42 of the drive circuit 40 is provided in the layer 30 is effective. For example, it is effective to provide the layer 30 with a demultiplexer that distributes the signal output by the source driver 42 to each source line. It is effective to use an OS transistor as the transistor of the demultiplexer.
  • the backup circuit 82 is preferably a memory having an OS transistor, for example.
  • a backup circuit composed of an OS transistor can suppress a voltage drop according to the data to be backed up and consume almost no power to hold data, because the OS transistor has an extremely small off-state current. , and other advantages.
  • a backup circuit 82 having an OS transistor can be provided in the display portion 60 in which a plurality of pixels 61 are arranged.
  • FIG. 9 illustrates how each pixel 61 is provided with a backup circuit 82 .
  • a backup circuit 82 including an OS transistor can be stacked with the layer 20 including the Si transistor.
  • the backup circuit 82 may be arranged in a matrix like the sub-pixels in the pixel 61, or may be arranged for every plurality of pixels. That is, the backup circuit 82 can be arranged in the layer 30 without being restricted by the arrangement of the pixels 61 . Therefore, it is possible to increase the degree of freedom of the display section/circuit layout, to arrange the circuit area without increasing the circuit area, and to increase the storage capacity of the backup circuit 82 required for arithmetic processing.
  • FIG. 11 shows a modification of each configuration of the display device 10 described above.
  • the block diagram of the display device 10A shown in FIG. 11 corresponds to a configuration in which an accelerator 52 is added to the functional circuit 50 in the display device 10 of FIG.
  • the accelerator 52 functions as a dedicated arithmetic circuit for sum-of-products arithmetic processing of the artificial neural network NN. In the calculation using the accelerator 52, it is possible to perform processing such as correcting the contour of the image by up-converting the display data. It should be noted that power consumption can be reduced by controlling the power gating of the CPU 51 while the accelerator 52 is performing arithmetic processing.
  • the display device of one embodiment of the present invention can be formed by stacking the pixel circuit and the functional circuit, a defective pixel can be detected using the functional circuit provided below the screen circuit. By using the defective pixel information, the display defect caused by the defective pixel can be corrected, and normal display can be performed.
  • correction methods exemplified below may be performed by a circuit provided outside the display device. Also, part of the correction method may be performed by the functional circuit 50 of the display device 10 .
  • FIG. 12A is a flow chart for the correction method described below.
  • step S1 a correction operation is started in step S1.
  • step S2 the pixel current is read.
  • each pixel can be driven to output current to a monitor line electrically connected to the pixel.
  • step S3 the read current is converted into voltage.
  • a digital signal is to be handled in subsequent processing, it can be converted into digital data in step S3.
  • ADC analog-to-digital conversion circuit
  • Pixel parameters of each pixel are obtained based on the obtained data.
  • Pixel parameters include, for example, the threshold voltage or field effect mobility of a driving transistor, the threshold voltage of a light emitting element, and the current value at a predetermined voltage.
  • step S5 it is determined whether or not each pixel is abnormal based on the pixel parameters. For example, if the pixel parameter value exceeds (or falls below) a predetermined threshold value, the pixel is identified as an abnormal pixel.
  • the abnormal pixel includes a dark point defect whose luminance is extremely low with respect to the input data potential, a bright point defect whose luminance is extremely high, and the like.
  • step S5 the address of the abnormal pixel and the type of defect can be identified and obtained.
  • step S6 correction processing is performed.
  • FIG. 12B schematically shows 3 ⁇ 3 pixels.
  • the center pixel is pixel 61D which is a dark spot defect.
  • FIG. 12B schematically shows that the pixel 61D is turned off and the surrounding pixels 61N are turned on with a predetermined luminance.
  • a dark spot defect is a defect in which the luminance of a pixel is unlikely to reach the normal luminance even if correction is performed to increase the data potential to be input to the pixel. Therefore, as shown in FIG. 12B, correction is performed to increase the brightness of the pixels 61N surrounding the dark spot defect pixel 61D. As a result, a normal image can be displayed even when a dark spot defect occurs.
  • the bright spot defect can be made inconspicuous by lowering the brightness of the surrounding pixels.
  • correction parameters can be set for each pixel.
  • corrected image data for displaying an optimum image on the display device 10 can be generated.
  • correction parameters can be set so as to cancel (level) variations in pixel parameters.
  • a reference value is set based on the median value or average value of pixel parameters for some or all pixels, and the correction value for canceling the difference from the reference value for the pixel parameter of a predetermined pixel is It can be set as a correction parameter for the pixel.
  • correction data that considers both a correction amount for compensating for the abnormal pixel and a correction amount for canceling variations in pixel parameters.
  • step S7 the correction operation is terminated.
  • an image can be displayed based on the correction parameters acquired in the correction operation and the input image data.
  • a neural network may be used as one of the correction operations.
  • the configuration is such that sum-of-products computation is repeated.
  • Computation using the accelerator 52 can correct the above-described display failure. It should be noted that power consumption can be reduced by controlling the power gating of the CPU 51 while the accelerator 52 is performing arithmetic processing.
  • the neural network can determine correction parameters based on inference results obtained by machine learning, for example.
  • DNN deep neural networks
  • CNN convolutional neural networks
  • RNN recurrent neural networks
  • DBM deep Boltzmann machines
  • DBN deep belief networks
  • the above-described CPU 51 can continue to hold the data in the middle of the calculation as backup data. Therefore, it is particularly effective in performing a huge amount of arithmetic processing such as an arithmetic operation based on an artificial neural network.
  • the CPU 51 function as an application processor, it is possible to reduce power consumption as well as reduce display defects by combining driving with variable frame frequency.
  • FIG. 13 is a cross-sectional view showing a configuration example of the display device 10.
  • the display device 10 has an insulator 421 and a base material 770 , and the insulator 421 and the base material 770 are attached with a sealant 712 .
  • An OS transistor is preferably used for the pixel circuit.
  • at least part of the driver circuit may be formed using an OS transistor.
  • at least part of the functional circuit may be formed using an OS transistor.
  • at least part of the drive circuit may be externally attached.
  • at least part of the functional circuit may be externally attached.
  • Insulator 421 As the insulator 421, various insulator substrates such as a glass substrate and a sapphire substrate can be used. An insulator 214 is provided over the insulator 421 and an insulator 216 is provided over the insulator 214 .
  • Insulator 222 ⁇ Insulator 222, Insulator 224, Insulator 254, Insulator 280, Insulator 274, Insulator 281>>
  • An insulator 222 , an insulator 224 , an insulator 254 , an insulator 280 , an insulator 274 , and an insulator 281 are provided over the insulator 216 .
  • the insulator 421 , the insulator 214 , the insulator 280 , the insulator 274 , and the insulator 281 function as interlayer films and function as planarization films that cover the uneven shapes below them. good too.
  • An insulator 361 is provided over the insulator 281 .
  • a conductor 317 and a conductor 337 are embedded in the insulator 361 .
  • the height of the top surface of the conductor 337 and the height of the top surface of the insulator 361 can be made approximately the same.
  • An insulator 363 is provided over the conductor 337 and the insulator 361 .
  • a conductor 347 , a conductor 353 , a conductor 355 , and a conductor 357 are embedded in the insulator 363 .
  • the height of the top surfaces of the conductors 353, 355, and 357 and the height of the top surface of the insulator 363 can be approximately the same.
  • a conductor 341 , a conductor 343 , and a conductor 351 are embedded in the insulator 363 .
  • the height of the top surface of the conductor 351 and the height of the top surface of the insulator 363 can be made approximately the same.
  • the insulator 361 and the insulator 363 function as interlayer films and may function as planarization films that cover the uneven shapes below them.
  • the top surface of the insulator 363 may be planarized by planarization treatment using a chemical mechanical polishing (CMP) method or the like in order to improve planarity.
  • CMP chemical mechanical polishing
  • connection electrode 760 is provided over the conductor 353 , the conductor 355 , the conductor 357 , and the insulator 363 .
  • An anisotropic conductor 780 is provided to be electrically connected to the connection electrode 760
  • an FPC (Flexible Printed Circuit) 716 is provided to be electrically connected to the anisotropic conductor 780 .
  • Various signals and the like are supplied to the display device 10 from the outside of the display device 10 by the FPC 716 .
  • FIG. 13 shows three conductors, a conductor 353, a conductor 355, and a conductor 357, as conductors having a function of electrically connecting the connection electrode 760 and the conductor 347.
  • the mode is not limited to this.
  • the number of conductors having a function of electrically connecting the connection electrode 760 and the conductor 347 may be one, two, or four or more. By providing a plurality of conductors having a function of electrically connecting the connection electrode 760 and the conductor 347, contact resistance can be reduced.
  • a transistor 750 is provided over the insulator 214 .
  • the transistor 750 can be a transistor provided in the layer 30 described in Embodiment 3.
  • a transistor provided in the pixel circuit 62 can be used.
  • An OS transistor can be preferably used as the transistor 750 .
  • An OS transistor has a feature of extremely low off-state current. Therefore, since the retention time of image data or the like can be lengthened, the frequency of refresh operations can be reduced. Therefore, power consumption of the display device 10 can be reduced.
  • the transistor 750 can be a transistor provided in the backup circuit 82 .
  • An OS transistor can be preferably used as the transistor 750 .
  • An OS transistor has a feature of extremely low off-state current. Therefore, data held in the flip-flop can be held even during a period in which sharing of the power supply voltage is stopped. Therefore, the normally-off operation of the CPU (the operation of intermittently stopping the power supply voltage) can be achieved. Therefore, power consumption of the display device 10 can be reduced.
  • a conductor 301 a and a conductor 301 b are embedded in the insulator 254 , the insulator 280 , the insulator 274 , and the insulator 281 .
  • Conductor 301 a is electrically connected to one of the source and drain of transistor 750
  • conductor 301 b is electrically connected to the other of the source and drain of transistor 750 .
  • the height of the top surfaces of the conductors 301a and 301b and the height of the top surface of the insulator 281 can be made approximately the same.
  • a conductor 311 , a conductor 313 , a conductor 331 , a capacitor 790 , a conductor 333 , and a conductor 335 are embedded in the insulator 361 .
  • the conductors 311 and 313 are electrically connected to the transistor 750 and function as wirings.
  • the conductors 333 and 335 are electrically connected to the capacitor 790 .
  • the height of the top surfaces of the conductors 331, 333, and 335 and the height of the top surface of the insulator 361 can be approximately the same.
  • capacitor 790 has lower electrode 321 and upper electrode 325 .
  • An insulator 323 is provided between the lower electrode 321 and the upper electrode 325 . That is, the capacitor 790 has a laminated structure in which the insulator 323 functioning as a dielectric is sandwiched between a pair of electrodes.
  • FIG. 13 shows an example in which the capacitor 790 is provided over the insulator 281; however, the capacitor 790 may be provided over an insulator different from the insulator 281.
  • FIG. 13 shows an example in which the conductor 301a, the conductor 301b, and the conductor 305 are formed in the same layer. Further, an example in which the conductor 311, the conductor 313, the conductor 317, and the lower electrode 321 are formed in the same layer is shown. Further, an example in which the conductor 331, the conductor 333, the conductor 335, and the conductor 337 are formed in the same layer is shown. Further, an example in which the conductor 341, the conductor 343, and the conductor 347 are formed in the same layer is shown. Furthermore, an example in which the conductor 351, the conductor 353, the conductor 355, and the conductor 357 are formed in the same layer is shown. By forming a plurality of conductors in the same layer, the manufacturing process of the display device 10 can be simplified, so that the manufacturing cost of the display device 10 can be reduced. Note that they may be formed in different layers and may have different types of materials.
  • a display device 10 shown in FIG. 13 has a light emitting element 70 .
  • the light-emitting element 70 has a conductor 772 , an EL layer 786 and a conductor 788 .
  • the EL layer 786 has an organic compound or an inorganic compound such as quantum dots.
  • Materials that can be used for the organic compound include fluorescent materials, phosphorescent materials, and the like.
  • Materials that can be used for quantum dots include colloidal quantum dot materials, alloy quantum dot materials, core-shell quantum dot materials, core quantum dot materials, and the like.
  • the luminance of the display device 10 can be, for example, 500 cd/m 2 or more, preferably 1000 cd/m 2 or more and 10000 cd/m 2 or less, and more preferably 2000 cd/m 2 or more and 5000 cd/m 2 or less.
  • the conductor 772 is electrically connected to the other of the source and the drain of the transistor 750 through the conductors 351, 341, 331, 313, and 301b.
  • a conductor 772 is formed over the insulator 363 and functions as a pixel electrode.
  • a material that transmits or reflects visible light can be used for the conductor 772 .
  • a light-transmitting material for example, an oxide material containing indium, zinc, tin, or the like is preferably used.
  • a reflective material for example, a material containing aluminum, silver, or the like may be used.
  • the light-emitting element 70 includes a light-transmitting conductor 788 and can be a top-emission light-emitting element. Note that the light-emitting element 70 may have a bottom emission structure in which light is emitted to the conductor 772 side, or a dual emission structure in which light is emitted to both the conductor 772 and the conductor 788 .
  • the light emitting device 70 can have a micro-optical resonator (microcavity) structure. Thereby, light of predetermined colors (for example, RGB) can be extracted, and the display device 10 can display a high-brightness image. Moreover, the power consumption of the display device 10 can be reduced.
  • micro-optical resonator microcavity
  • Light shielding layer 738, insulator 734>> A light shielding layer 738 and an insulator 734 in contact therewith are provided on the substrate 770 side.
  • the light blocking layer 738 has a function of blocking light emitted from adjacent regions.
  • the light shielding layer 738 has a function of blocking external light from reaching the transistor 750 and the like.
  • the insulator 730 can be configured to cover part of the conductor 772 .
  • the present invention is not limited to this.
  • a structure in which the insulator 730 is not provided may be employed. Note that the opening of the display device can be increased without the insulator 730, which is preferable.
  • the light-blocking layer 738 is provided so as to have a region overlapping with the insulator 730 . Also, the light shielding layer 738 is covered with an insulator 734 . A sealing layer 732 is filled between the light emitting element 70 and the insulator 734 .
  • structure 778 is provided between insulator 730 and EL layer 786 . Also, the structure 778 is provided between the insulator 730 and the insulator 734 .
  • the display device 10 can be provided with optical members (optical substrates) such as a polarizing member, a retardation member, and an antireflection member.
  • optical members optical substrates
  • a polarizing member such as a polarizing member, a retardation member, and an antireflection member.
  • a colored layer can be provided.
  • the colored layer is provided so as to have a region overlapping with the light emitting element 70 .
  • the color purity of the light extracted from the light emitting element 70 can be increased. Thereby, a high-quality image can be displayed on the display device 10 .
  • all the light-emitting elements 70 of the display device 10 can be light-emitting elements that emit white light. can do.
  • FIG. 14 is a cross-sectional view showing a configuration example of the display device 10. As shown in FIG. The display device 10 has a substrate 701 and a base material 770 , and the substrate 701 and the base material 770 are bonded together with a sealing material 712 . The display device 10 shown in FIG. 14 is different from the display device 10 shown in FIG. 13 in that the transistor 601 is included.
  • a transistor 441 and a transistor 601 are provided over the substrate 701 .
  • the transistors 441 and 601 can be the transistors provided in the layer 20 described in Embodiment 3. For example, it can be used for the transistor of the driving circuit 40 or the transistor of the functional circuit 50 that the layer 20 has.
  • the transistor 441 includes a conductor 443 functioning as a gate electrode, an insulator 445 functioning as a gate insulator, and part of the substrate 701, and includes a semiconductor region 447 including a channel formation region and a source region. Or it has a low resistance region 449a functioning as one of the drain regions and a low resistance region 449b functioning as the other of the source or drain regions. Transistor 441 may be either p-channel or n-channel.
  • a transistor 441 is electrically isolated from other transistors by an element isolation layer 403 .
  • FIG. 14 shows the case where the element isolation layer 403 electrically isolates the transistor 441 from the transistor 601 .
  • the element isolation layer 403 can be formed using a LOCOS (LOCal Oxidation of Silicon) method, an STI (Shallow Trench Isolation) method, or the like.
  • the semiconductor region 447 has a convex shape.
  • a conductor 443 is provided to cover the side and top surfaces of the semiconductor region 447 with the insulator 445 interposed therebetween. Note that FIG. 14 does not show how the conductor 443 covers the side surface of the semiconductor region 447 .
  • a material that adjusts the work function can be used for the conductor 443 .
  • a transistor in which a semiconductor region has a convex shape such as the transistor 441 can be called a fin transistor because it uses a convex portion of a semiconductor substrate.
  • an insulator functioning as a mask for forming the projection may be provided in contact with the upper portion of the projection.
  • FIG. 14 shows a structure in which part of the substrate 701 is processed to form a convex portion, a semiconductor having a convex shape may be formed by processing an SOI substrate.
  • transistor 441 illustrated in FIG. 14 is an example, and the structure is not limited to that structure, and an appropriate structure may be employed depending on the circuit structure, the operation method of the circuit, or the like.
  • transistor 441 may be a planar transistor.
  • the transistor 601 can have a structure similar to that of the transistor 441 .
  • the insulators 405 , 407 , 409 , and 411 are provided over the substrate 701 .
  • a conductor 451 is embedded in the insulator 405 , the insulator 407 , the insulator 409 , and the insulator 411 .
  • the height of the top surface of the conductor 451 and the height of the top surface of the insulator 411 can be made approximately the same.
  • the insulator 405, the insulator 407, the insulator 409, and the insulator 411 function as interlayer films and may function as planarization films that cover the uneven shapes below them.
  • Insulator 421 and an insulator 214 are provided over the conductor 451 and the insulator 411 .
  • a conductor 453 is embedded in the insulator 421 and the insulator 214 .
  • the height of the top surface of the conductor 453 and the height of the top surface of the insulator 214 can be made approximately the same.
  • An insulator 216 is provided over the conductor 453 and the insulator 214 .
  • a conductor 455 is embedded in the insulator 216 .
  • the height of the top surface of the conductor 455 and the height of the top surface of the insulator 216 can be made approximately the same.
  • Insulator 222 ⁇ Insulator 222, Insulator 224, Insulator 254, Insulator 280, Insulator 274, Insulator 281>>
  • An insulator 222 , an insulator 224 , an insulator 254 , an insulator 280 , an insulator 274 , and an insulator 281 are provided over the conductor 455 and the insulator 216 .
  • a conductor 305 is embedded in the insulator 222 , the insulator 224 , the insulator 254 , the insulator 280 , the insulator 274 , and the insulator 281 .
  • the height of the upper surface of the conductor 305 and the height of the upper surface of the insulator 281 can be made approximately the same.
  • the insulator 421 , the insulator 214 , the insulator 280 , the insulator 274 , and the insulator 281 function as interlayer films and function as planarization films that cover the uneven shapes below them. good too.
  • An insulator 361 is provided over the conductor 305 and the insulator 281 .
  • low-resistance region 449b which functions as the other of the source or drain regions of transistor 441, includes conductors 451, 453, 455, 305, 317, and 317. 337 , a conductor 347 , a conductor 353 , a conductor 355 , a conductor 357 , a connection electrode 760 , and an anisotropic conductor 780 to electrically connect to the FPC 716 .
  • FIG. 15 is a cross-sectional view showing a configuration example of the display device 10. As shown in FIG. The display device 10 has a substrate 701 and a base material 770 , and the substrate 701 and the base material 770 are bonded together with a sealing material 712 . The display device 10 shown in FIG. 15 is different from the display device 10 shown in FIG. 14 in that the transistor 750 has a structure similar to that of the transistor 441 .
  • a transistor 441 and a transistor 601 are provided over the substrate 701 .
  • the transistors 441 and 601 can be the transistors provided in the layer 20 described in Embodiment 3. For example, it can be used for the transistor of the driving circuit 40 or the transistor of the functional circuit 50 that the layer 20 has.
  • the transistor 441 includes a conductor 443 functioning as a gate electrode, an insulator 445 functioning as a gate insulator, and part of the substrate 701, and includes a semiconductor region 447 including a channel formation region and a source region. Or it has a low resistance region 449a functioning as one of the drain regions and a low resistance region 449b functioning as the other of the source or drain regions. Transistor 441 may be either p-channel or n-channel.
  • a transistor 441 is electrically isolated from other transistors by an element isolation layer 403 .
  • FIG. 15 shows the case where the element isolation layer 403 electrically isolates the transistor 441 from the transistor 601 .
  • the element isolation layer 403 can be formed using a LOCOS (LOCal Oxidation of Silicon) method, an STI (Shallow Trench Isolation) method, or the like.
  • the semiconductor region 447 has a convex shape.
  • a conductor 443 is provided to cover the side and top surfaces of the semiconductor region 447 with the insulator 445 interposed therebetween. Note that FIG. 15 does not show how the conductor 443 covers the side surface of the semiconductor region 447 .
  • a material that adjusts the work function can be used for the conductor 443 .
  • a transistor in which a semiconductor region has a convex shape such as the transistor 441 can be called a fin transistor because it uses a convex portion of a semiconductor substrate.
  • an insulator functioning as a mask for forming the projection may be provided in contact with the upper portion of the projection.
  • FIG. 15 shows a structure in which part of the substrate 701 is processed to form a convex portion, a semiconductor having a convex shape may be formed by processing an SOI substrate.
  • transistor 441 illustrated in FIG. 15 is an example, and is not limited to that structure, and an appropriate structure may be employed depending on the circuit structure, the operation method of the circuit, or the like.
  • transistor 441 may be a planar transistor.
  • the transistor 601 can have a structure similar to that of the transistor 441 .
  • the insulators 405 , 407 , 409 , and 411 are provided over the substrate 701 .
  • a conductor 451 is embedded in the insulator 405 , the insulator 407 , the insulator 409 , and the insulator 411 .
  • the height of the top surface of the conductor 451 and the height of the top surface of the insulator 411 can be made approximately the same.
  • the insulator 405, the insulator 407, the insulator 409, and the insulator 411 function as interlayer films and may function as planarization films that cover the uneven shapes below them.
  • Insulator 421 and an insulator 214 are provided over the conductor 451 and the insulator 411 .
  • a conductor 453 is embedded in the insulator 421 and the insulator 214 .
  • the height of the top surface of the conductor 453 and the height of the top surface of the insulator 214 can be made approximately the same.
  • An insulator 216 is provided over the conductor 453 and the insulator 214 .
  • a conductor 455 is embedded in the insulator 216 .
  • the height of the top surface of the conductor 455 and the height of the top surface of the insulator 216 can be made approximately the same.
  • Adhesion layer 459 An adhesion layer 459 is provided over the insulator 216 .
  • a bump 458 is embedded in the adhesive layer 459 .
  • Adhesive layer 459 adheres insulator 216 and substrate 701B.
  • the lower surface of the bump 458 is in contact with the conductor 455 and the upper surface of the bump 458 is in contact with the conductor 305 to electrically connect the conductor 455 and the conductor 305 .
  • a transistor 750 is provided over the substrate 701B.
  • the transistor 750 can be a transistor provided in the layer 30 described in Embodiment 3.
  • a transistor provided in the pixel circuit 62 can be used.
  • the transistor 750 can have a structure similar to that of the transistor 441 .
  • the insulator 405B, the insulator 280, the insulator 274, and the insulator 281 are provided over the substrate 701B.
  • the conductor 305 is embedded in the insulator 405B, the insulator 280, the insulator 274, and the insulator 281.
  • the height of the upper surface of the conductor 305 and the height of the upper surface of the insulator 281 can be made approximately the same.
  • the insulator 405B, the insulator 280, the insulator 274, and the insulator 281 function as interlayer films and may function as planarization films that cover the uneven shapes below them.
  • An insulator 361 is provided over the conductor 305 and the insulator 281 .
  • low resistance region 449b which functions as the other of the source region or the drain region of transistor 441, includes conductor 451, conductor 453, conductor 455, bump 458, conductor 305, and conductor 317.
  • the display device 10 illustrated in FIG. 16 is mainly different from the display device 10 illustrated in FIG. 14 in that the transistors 602 and 603 which are OS transistors are provided instead of the transistors 441 and 601 .
  • an OS transistor can be used as the transistor 750 . That is, the display device 10 illustrated in FIG. 14 is provided with stacked OS transistors.
  • FIG. 16 shows an example in which the transistors 602 and 603 are provided over the substrate 701 .
  • the substrate 701 as described above, a single crystal semiconductor substrate such as a single crystal silicon substrate or another semiconductor substrate can be used. Further, as the substrate 701, various insulating substrates such as a glass substrate and a sapphire substrate may be used.
  • transistor 603 ⁇ transistor 602, transistor 603>>
  • the transistors 602 and 603 can be the transistors provided in the layer 20 described in Embodiment 3.
  • the transistors 602 and 603 can be transistors with structures similar to that of the transistor 750 . Note that the transistors 602 and 603 may be OS transistors having structures different from that of the transistor 750 .
  • the insulator 616 , the insulator 622 , the insulator 624 , the insulator 654 , the insulator 680 , the insulator 674 , and the insulator 681 are provided over the insulator 614 .
  • a conductor 461 is embedded in the insulator 654 , the insulator 680 , the insulator 674 , and the insulator 681 .
  • the height of the top surface of the conductor 461 and the height of the top surface of the insulator 681 can be made approximately the same.
  • a conductor 463 is embedded in the insulator 501 .
  • the height of the top surface of the conductor 463 and the height of the top surface of the insulator 501 can be made approximately the same.
  • An insulator 421 and an insulator 214 are provided over the conductor 463 and the insulator 501 .
  • a conductor 453 is embedded in the insulator 421 and the insulator 214 .
  • the height of the top surface of the conductor 453 and the height of the top surface of the insulator 214 can be made approximately the same.
  • one of the source or drain of transistor 602 is connected to conductor 461, conductor 463, conductor 453, conductor 455, conductor 305, conductor 317, conductor 337, conductor 347, conductor It is electrically connected to the FPC 716 through the body 353 , the conductor 355 , the conductor 357 , the connection electrode 760 , and the anisotropic conductor 780 .
  • a conductor 305 is embedded in the insulator 222 , the insulator 224 , the insulator 254 , the insulator 280 , the insulator 274 , and the insulator 281 .
  • the height of the upper surface of the conductor 305 and the height of the upper surface of the insulator 281 can be made approximately the same.
  • the insulator 613 , the insulator 614 , the insulator 680 , the insulator 674 , the insulator 681 , and the insulator 501 function as interlayer films and function as planarization films that cover the uneven shapes below them. may have
  • all the transistors included in the display device 10 can be OS transistors while the display device 10 has a narrow frame and a small size. Accordingly, for example, the transistor provided in the layer 20 and the transistor provided in the layer 30 described in Embodiment 3 can be manufactured using the same device. Therefore, the manufacturing cost of the display device 10 can be reduced, and the display device 10 can be made inexpensive.
  • FIG. 17 is a cross-sectional view showing a configuration example of the display device 10. As shown in FIG. The main difference from the display device 10 shown in FIG. 14 is that a layer including the transistor 800 is provided between the layer including the transistor 750 and the layers including the transistors 601 and 441 .
  • the layer 20 described in Embodiment 3 can be formed of a layer including the transistors 601 and 441 and a layer including the transistor 800 .
  • the transistor 750 can be the transistor provided in the layer 30 described in Embodiment 3.
  • a conductor 853 is embedded in the insulator 821 and the insulator 814 .
  • the height of the top surface of the conductor 853 and the height of the top surface of the insulator 814 can be made approximately the same.
  • a conductor 855 is embedded in the insulator 816 .
  • the height of the top surface of the conductor 855 and the height of the top surface of the insulator 816 can be made approximately the same.
  • An insulator 822 , an insulator 824 , an insulator 854 , an insulator 880 , an insulator 874 , and an insulator 881 are provided over the conductor 855 and the insulator 816 .
  • the conductor 805 is embedded in the insulator 822 , the insulator 824 , the insulator 854 , the insulator 880 , the insulator 874 , and the insulator 881 .
  • the height of the upper surface of the conductor 805 and the height of the upper surface of the insulator 881 can be made approximately the same.
  • An insulator 421 and an insulator 214 are provided over the conductor 817 and the insulator 881 .
  • low resistance region 449b which functions as the other of the source or drain regions of transistor 441, includes conductors 451, 853, 855, 805, 817, and 817.
  • conductor 455 conductor 305 , conductor 317 , conductor 337 , conductor 347 , conductor 353 , conductor 355 , conductor 357 , connection electrode 760 , and anisotropic conductor 780
  • FPC 716 is electrically connected to
  • a transistor 800 is provided over the insulator 814 .
  • the transistor 800 can be a transistor provided in the layer 20 described in Embodiment 3.
  • the transistor 800 is preferably an OS transistor.
  • transistor 800 can be a transistor provided in backup circuit 82 .
  • a conductor 801 a and a conductor 801 b are embedded in the insulator 854 , the insulator 880 , the insulator 874 , and the insulator 881 .
  • Conductor 801 a is electrically connected to one of the source and drain of transistor 800
  • conductor 801 b is electrically connected to the other of the source and drain of transistor 800 .
  • the height of the top surfaces of the conductors 801a and 801b and the height of the top surface of the insulator 881 can be approximately the same.
  • the transistor 750 can be a transistor provided in the layer 30 described in Embodiment 3.
  • transistor 750 can be a transistor provided in pixel circuit 62 .
  • the transistor 750 is preferably an OS transistor.
  • Insulator 405, insulator 407, insulator 409, insulator 411, insulator 821, insulator 814, insulator 880, insulator 874, insulator 881, insulator 421, insulator 214, insulator 280, insulator 274 , the insulator 281 , the insulator 361 , and the insulator 363 function as interlayer films and may function as planarization films covering the uneven shapes below them.
  • FIG. 17 shows an example in which a conductor 801a, a conductor 801b, and a conductor 805 are formed in the same layer. Further, an example in which the conductor 811, the conductor 813, and the conductor 817 are formed in the same layer is shown.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • ⁇ Structure example of transistor> 18A, 18B, and 18C are a top view and a cross-sectional view of a transistor 200A that can be used in a display device that is one embodiment of the present invention, and the periphery of the transistor 200A.
  • the transistor 200A can be applied to the display device of one embodiment of the present invention.
  • FIG. 18A is a top view of transistor 200A.
  • 18B and 18C are cross-sectional views of the transistor 200A.
  • FIG. 18B is a cross-sectional view of the portion indicated by the dashed-dotted line A1-A2 in FIG. 18A, and is also a cross-sectional view in the channel length direction of the transistor 200A.
  • FIG. 18C is a cross-sectional view of the portion indicated by the dashed-dotted line A3-A4 in FIG. 18A, and is also a cross-sectional view in the channel width direction of the transistor 200A.
  • some elements are omitted for clarity of illustration.
  • the transistor 200A includes a metal oxide 230a over a substrate (not shown), a metal oxide 230b over the metal oxide 230a, and a metal oxide 230b.
  • a conductor 242a and a conductor 242b are spaced apart from each other, and an insulator 280 is arranged over the conductor 242a and the conductor 242b and has an opening formed between the conductor 242a and the conductor 242b.
  • the conductor 260 arranged in the opening, the metal oxide 230b, the conductor 242a, the conductor 242b, and the insulator 280, the insulator 250 arranged between the conductor 260, and the metal It has an oxide 230 b , a conductor 242 a , a conductor 242 b , an insulator 280 , and a metal oxide 230 c interposed between the insulator 250 .
  • the top surface of the conductor 260 preferably substantially coincides with the top surfaces of the insulator 250, the insulator 254, the metal oxide 230c, and the insulator 280.
  • metal oxide 230a, the metal oxide 230b, and the metal oxide 230c may be collectively referred to as the metal oxide 230 below.
  • conductor 242a and the conductor 242b may be collectively referred to as a conductor 242 in some cases.
  • side surfaces of the conductors 242a and 242b on the conductor 260 side are substantially vertical.
  • the transistor 200A illustrated in FIG. 18 is not limited to this, and the angle between the side surfaces and the bottom surfaces of the conductors 242a and 242b is 10° to 80°, preferably 30° to 60°. may be Moreover, the opposing side surfaces of the conductor 242a and the conductor 242b may have a plurality of surfaces.
  • an insulator 254 is interposed between insulator 224, metal oxide 230a, metal oxide 230b, conductor 242a, conductor 242b, and metal oxide 230c, and insulator 280. preferably.
  • the insulator 254 includes the side surface of the metal oxide 230c, the top and side surfaces of the conductor 242a, the top and side surfaces of the conductor 242b, the metal oxide 230a, and the metal oxide 230b. , and the top surface of insulator 224 .
  • the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c are stacked in a region where a channel is formed (hereinafter also referred to as a channel formation region) and its vicinity.
  • a channel formation region a region where a channel is formed
  • the invention is not limited to this.
  • a two-layer structure of the metal oxide 230b and the metal oxide 230c, or a laminated structure of four or more layers may be provided.
  • the conductor 260 has a two-layer structure in the transistor 200A, the present invention is not limited to this.
  • the conductor 260 may have a single-layer structure or a laminated structure of three or more layers.
  • each of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c may have a laminated structure of two or more layers.
  • the metal oxide 230c has a stacked structure consisting of a first metal oxide and a second metal oxide on the first metal oxide
  • the first metal oxide is the metal oxide 230b.
  • the second metal oxide preferably has a similar composition to metal oxide 230a.
  • the conductor 260 functions as a gate electrode of the transistor, and the conductors 242a and 242b function as source and drain electrodes, respectively.
  • the conductor 260 is formed to be embedded in the opening of the insulator 280 and the region sandwiched between the conductors 242a and 242b.
  • the arrangement of the conductors 260 , 242 a and 242 b is selected in a self-aligned manner with respect to the opening of the insulator 280 . That is, in the transistor 200A, the gate electrode can be arranged between the source electrode and the drain electrode in a self-aligned manner. Therefore, since the conductor 260 can be formed without providing a margin for alignment, the area occupied by the transistor 200A can be reduced. As a result, the display device can have high definition. In addition, the display device can have a narrow frame.
  • the conductor 260 preferably has a conductor 260a provided inside the insulator 250 and a conductor 260b provided so as to be embedded inside the conductor 260a.
  • the transistor 200A includes an insulator 214 provided over a substrate (not shown), an insulator 216 provided over the insulator 214, and a conductor 205 embedded in the insulator 216. , insulator 222 disposed over insulator 216 and conductor 205 , and insulator 224 disposed over insulator 222 .
  • a metal oxide 230 a is preferably disposed over the insulator 224 .
  • An insulator 274 functioning as an interlayer film and an insulator 281 are preferably provided over the transistor 200A.
  • the insulator 274 is preferably arranged in contact with top surfaces of the conductor 260 , the insulator 250 , the insulator 254 , the metal oxide 230 c , and the insulator 280 .
  • the insulators 222, 254, and 274 preferably have a function of suppressing at least one diffusion of hydrogen (eg, hydrogen atoms, hydrogen molecules, or the like).
  • insulators 222 , 254 , and 274 preferably have lower hydrogen permeability than insulators 224 , 250 , and 280 .
  • the insulators 222 and 254 preferably have a function of suppressing diffusion of oxygen (eg, at least one of oxygen atoms, oxygen molecules, and the like).
  • insulators 222 and 254 preferably have lower oxygen permeability than insulators 224 , 250 and 280 .
  • insulator 224 , metal oxide 230 , and insulator 250 are separated by insulators 280 and 281 and insulators 254 and 274 . Therefore, impurities such as hydrogen contained in the insulators 280 and 281 or excess oxygen in the insulators 224, the metal oxides 230a, and the insulators 250 interfere with the insulators 224, the metal oxides 230a, and the metal oxides. 230b and the insulator 250 can be suppressed.
  • a conductor 240 (a conductor 240a and a conductor 240b) that is electrically connected to the transistor 200A and functions as a plug is preferably provided.
  • insulators 241 (an insulator 241a and an insulator 241b) are provided in contact with side surfaces of the conductor 240 functioning as a plug. That is, the insulator 241 is provided in contact with the inner walls of the openings of the insulator 254 , the insulator 280 , the insulator 274 , and the insulator 281 .
  • the first conductor of the conductor 240 may be provided in contact with the side surface of the insulator 241 and the second conductor of the conductor 240 may be provided inside.
  • the height of the upper surface of the conductor 240 and the height of the upper surface of the insulator 281 can be made approximately the same.
  • the conductor 240 may be provided as a single layer or a laminated structure of three or more layers. When the structure has a laminated structure, an ordinal number may be assigned in order of formation for distinction.
  • metal oxides functioning as oxide semiconductors are added to the metal oxides 230 (the metal oxides 230a, 230b, and 230c) including the channel formation region. ) is preferably used.
  • oxide semiconductors metal oxides functioning as oxide semiconductors
  • the metal oxide preferably contains at least indium (In) or zinc (Zn). In particular, it preferably contains indium (In) and zinc (Zn). Moreover, it is preferable that the element M is included in addition to these.
  • element M aluminum (Al), gallium (Ga), yttrium (Y), tin (Sn), boron (B), titanium (Ti), iron (Fe), nickel (Ni), germanium (Ge), zirconium (Zr), molybdenum (Mo), lanthanum (La), cerium (Ce), neodymium (Nd), hafnium (Hf), tantalum (Ta), tungsten (W), magnesium (Mg) or cobalt (Co)
  • the element M is preferably one or more of aluminum (Al), gallium (Ga), yttrium (Y), and tin (Sn). Moreover, it is more preferable that the element M contains either one or both of Ga and Sn.
  • the thickness of the metal oxide 230b in a region that does not overlap with the conductor 242 may be thinner than that in a region that overlaps with the conductor 242 .
  • This is formed by removing a portion of the top surface of metal oxide 230b when forming conductors 242a and 242b.
  • a region with low resistance may be formed near the interface with the conductive film.
  • a high-definition display device including a small-sized transistor can be provided.
  • a display device including a transistor with high on-state current and high luminance can be provided.
  • a fast-operating display device can be provided with a fast-operating transistor.
  • a highly reliable display device including a transistor with stable electrical characteristics can be provided.
  • a display device including a transistor with low off-state current and low power consumption can be provided.
  • transistor 200A A detailed structure of the transistor 200A that can be used in the display device that is one embodiment of the present invention will be described.
  • the conductor 205 is arranged so as to have regions that overlap with the metal oxide 230 and the conductor 260 . Further, the conductor 205 is preferably embedded in the insulator 216 .
  • the conductor 205 has a conductor 205a, a conductor 205b, and a conductor 205c.
  • the conductor 205 a is provided in contact with the bottom surface and side walls of the opening provided in the insulator 216 .
  • the conductor 205b is provided so as to be embedded in a recess formed in the conductor 205a.
  • the top surface of the conductor 205 b is lower than the top surface of the conductor 205 a and the top surface of the insulator 216 .
  • the conductor 205c is provided in contact with the top surface of the conductor 205b and the side surface of the conductor 205a.
  • the height of the top surface of the conductor 205c is substantially the same as the height of the top surface of the conductor 205a and the height of the top surface of the insulator 216 . That is, the conductor 205b is surrounded by the conductors 205a and 205c.
  • the conductor 205a and the conductor 205c are conductive materials having a function of suppressing diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, nitrogen oxide molecules (NO, NO, NO, etc.), and copper atoms. It is preferable to use a flexible material. Alternatively, it is preferable to use a conductive material having a function of suppressing diffusion of oxygen (eg, at least one of oxygen atoms, oxygen molecules, and the like).
  • the conductor 205a By using a conductive material having a function of reducing diffusion of hydrogen for the conductor 205a and the conductor 205c, impurities such as hydrogen contained in the conductor 205b are transferred to the metal oxide 230 through the insulator 224 or the like. can be suppressed. Further, by using a conductive material having a function of suppressing diffusion of oxygen for the conductors 205a and 205c, it is possible to suppress reduction in conductivity due to oxidation of the conductor 205b. As the conductive material having a function of suppressing diffusion of oxygen, titanium, titanium nitride, tantalum, tantalum nitride, ruthenium, ruthenium oxide, or the like is preferably used, for example. Therefore, the conductor 205a may be a single layer or a laminate of the above conductive materials. For example, the conductor 205a may be titanium nitride.
  • a conductive material containing tungsten, copper, or aluminum as its main component is preferably used for the conductor 205b.
  • tungsten may be used for the conductor 205b.
  • the conductor 260 may function as a first gate (also referred to as a top gate) electrode.
  • the conductor 205 functions as a second gate (also referred to as a bottom gate) electrode.
  • V th of the transistor 200A can be controlled by changing the potential applied to the conductor 205 independently of the potential applied to the conductor 260 .
  • V th of the transistor 200A can be made higher than 0 V and the off-state current can be reduced. Therefore, applying a negative potential to the conductor 205 can make the drain current smaller when the potential applied to the conductor 260 is 0 V than when no potential is applied.
  • the conductor 205 is preferably provided larger than the channel formation region in the metal oxide 230 .
  • the conductor 205 also extends in a region outside the edge crossing the channel width direction of the metal oxide 230 .
  • the conductor 205 and the conductor 260 preferably overlap with each other with an insulator interposed therebetween on the outside of the side surface of the metal oxide 230 in the channel width direction.
  • the electric field of the conductor 260 functioning as the first gate electrode and the electric field of the conductor 205 functioning as the second gate electrode cause the channel formation region of the metal oxide 230 to be expanded. It can be surrounded electrically.
  • the conductor 205 is extended so that it also functions as a wire.
  • a structure in which a conductor functioning as a wiring is provided under the conductor 205 may be employed.
  • the insulator 214 preferably functions as a barrier insulating film that prevents impurities such as water or hydrogen from entering the transistor 200A from the substrate side. Therefore, the insulator 214 has a function of suppressing the diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, nitrogen oxide molecules (N 2 O, NO, NO 2 and the like), and copper atoms. (It is difficult for the above impurities to permeate.) It is preferable to use an insulating material. Alternatively, it is preferable to use an insulating material that has a function of suppressing the diffusion of oxygen (eg, at least one of oxygen atoms, oxygen molecules, and the like) (the oxygen hardly permeates).
  • oxygen eg, at least one of oxygen atoms, oxygen molecules, and the like
  • the insulator 214 is preferably made of aluminum oxide, silicon nitride, or the like. Accordingly, impurities such as water or hydrogen can be prevented from diffusing from the substrate side to the transistor 200A side with respect to the insulator 214 . Alternatively, diffusion of oxygen contained in the insulator 224 or the like to the substrate side of the insulator 214 can be suppressed.
  • the insulators 216 , 280 , and 281 that function as interlayer films preferably have lower dielectric constants than the insulator 214 .
  • the parasitic capacitance generated between wirings can be reduced.
  • the insulator 216, the insulator 280, and the insulator 281 include silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, silicon oxide to which fluorine is added, silicon oxide to which carbon is added, and carbon and nitrogen are added. Silicon oxide, silicon oxide having holes, or the like may be used as appropriate.
  • the insulators 222 and 224 function as gate insulators.
  • the insulator 224 in contact with the metal oxide 230 preferably releases oxygen by heating.
  • the oxygen released by heating is sometimes referred to as excess oxygen.
  • silicon oxide, silicon oxynitride, or the like may be used as appropriate for the insulator 224 .
  • an oxide material from which part of oxygen is released by heating is preferably used as the insulator 224 .
  • the oxide that desorbs oxygen by heating means that the desorption amount of oxygen in terms of oxygen atoms is 1.0 ⁇ 10 18 atoms/cm 3 or more, preferably 1, in TDS (Thermal Desorption Spectroscopy) analysis. 0 ⁇ 10 19 atoms/cm 3 or more, more preferably 2.0 ⁇ 10 19 atoms/cm 3 or more, or 3.0 ⁇ 10 20 atoms/cm 3 or more.
  • the surface temperature of the film during the TDS analysis is preferably in the range of 100° C. or higher and 700° C. or lower, or 100° C. or higher and 400° C. or lower.
  • the insulator 224 may have a thinner film thickness in a region that does not overlap with the insulator 254 and does not overlap with the metal oxide 230b than in other regions.
  • the thickness of the region of the insulator 224 which does not overlap with the insulator 254 and does not overlap with the metal oxide 230b is preferably a thickness with which oxygen can be diffused sufficiently.
  • the insulator 222 preferably functions as a barrier insulating film that prevents impurities such as water or hydrogen from entering the transistor 200A from the substrate side.
  • insulator 222 preferably has a lower hydrogen permeability than insulator 224 .
  • the insulator 222 preferably has a function of suppressing diffusion of oxygen (eg, at least one of oxygen atoms, oxygen molecules, and the like) (the above-mentioned oxygen is difficult to permeate).
  • oxygen eg, at least one of oxygen atoms, oxygen molecules, and the like
  • insulator 222 preferably has a lower oxygen permeability than insulator 224 .
  • the insulator 222 preferably has a function of suppressing diffusion of oxygen or impurities, so that diffusion of oxygen in the metal oxide 230 to the substrate side can be reduced.
  • the conductor 205 can be prevented from reacting with oxygen contained in the insulator 224 or the metal oxide 230 .
  • an insulator containing oxides of one or both of aluminum and hafnium which are insulating materials, is preferably used.
  • the insulator containing oxides of one or both of aluminum and hafnium aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate), or the like is preferably used.
  • the insulator 222 prevents oxygen from being released from the metal oxide 230 or impurities such as hydrogen from entering the metal oxide 230 from the peripheral portion of the transistor 200A. Acts as a restraining layer.
  • aluminum oxide, bismuth oxide, germanium oxide, niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, or zirconium oxide may be added to these insulators.
  • these insulators may be nitrided. Silicon oxide, silicon oxynitride, or silicon nitride may be stacked over the above insulator.
  • the insulator 222 is, for example, a so-called high oxide such as aluminum oxide, hafnium oxide, tantalum oxide, zirconium oxide, lead zirconate titanate (PZT), strontium titanate (SrTiO 3 ) or (Ba,Sr)TiO 3 (BST).
  • Insulators including -k materials may be used in single layers or stacks. As transistors are miniaturized and highly integrated, thinning of gate insulators may cause problems such as leakage current. By using a high-k material for the insulator functioning as the gate insulator, the gate potential during transistor operation can be reduced while maintaining the physical film thickness.
  • the insulator 222 and the insulator 224 may have a stacked structure of two or more layers. In that case, it is not limited to a laminated structure made of the same material, and a laminated structure made of different materials may be used. For example, an insulator similar to the insulator 224 may be provided under the insulator 222 .
  • Metal oxide 230 has metal oxide 230a, metal oxide 230b over metal oxide 230a, and metal oxide 230c over metal oxide 230b. Having the metal oxide 230a under the metal oxide 230b can suppress the diffusion of impurities from the structure formed below the metal oxide 230a to the metal oxide 230b. In addition, by having the metal oxide 230c on the metal oxide 230b, it is possible to suppress the diffusion of impurities from the structure formed above the metal oxide 230c to the metal oxide 230b.
  • the metal oxide 230 preferably has a laminated structure of a plurality of oxide layers with different atomic ratios of metal atoms.
  • the metal oxide 230 contains at least indium (In) and the element M
  • the ratio is preferably higher than the ratio of the number of atoms of the element M contained in the metal oxide 230b to the number of atoms of all elements forming the metal oxide 230b.
  • the atomic number ratio of the element M contained in the metal oxide 230a to In is larger than the atomic number ratio of the element M contained in the metal oxide 230b to In.
  • the metal oxide 230c can be a metal oxide that can be used for the metal oxide 230a or the metal oxide 230b.
  • the energy of the conduction band bottom of the metal oxide 230a and the metal oxide 230c be higher than the energy of the conduction band bottom of the metal oxide 230b.
  • the electron affinities of the metal oxides 230a and 230c are preferably smaller than the electron affinities of the metal oxide 230b.
  • the metal oxide 230c is preferably a metal oxide that can be used for the metal oxide 230a.
  • the ratio of the number of atoms of the element M contained in the metal oxide 230c to the number of atoms of all the elements forming the metal oxide 230c is higher than the number of atoms of all the elements forming the metal oxide 230b.
  • the atomic ratio of the element M contained in the metal oxide 230c to In is preferably higher than the atomic ratio of the element M contained in the metal oxide 230b to In.
  • the energy level at the bottom of the conduction band changes smoothly at the junction of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c.
  • the energy level of the bottom of the conduction band at the junction of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c continuously changes or continuously joins.
  • the metal oxide 230a and the metal oxide 230b, and the metal oxide 230b and the metal oxide 230c have a common element (main component) other than oxygen, so that the defect level density is low.
  • Mixed layers can be formed.
  • the metal oxide 230b is an In-Ga-Zn oxide
  • the metal oxide 230a and the metal oxide 230c may be In-Ga-Zn oxide, Ga-Zn oxide, gallium oxide, or the like.
  • the metal oxide 230c may have a laminated structure.
  • a stacked structure of In--Ga--Zn oxide and Ga--Zn oxide over the In--Ga--Zn oxide, or an In--Ga--Zn oxide and over the In--Ga--Zn oxide can be used.
  • a stacked structure of an In--Ga--Zn oxide and an oxide not containing In may be used as the metal oxide 230c.
  • the metal oxide 230c has a laminated structure
  • In: Ga: Zn 4:2:3 [atomic number ratio] and a laminated structure with gallium oxide.
  • the main path of carriers becomes the metal oxide 230b.
  • the defect level density at the interface between the metal oxide 230a and the metal oxide 230b and at the interface between the metal oxide 230b and the metal oxide 230c can be reduced. can be lowered. Therefore, the influence of interface scattering on carrier conduction is reduced, and the transistor 200A can obtain high on-current and high frequency characteristics.
  • the constituent elements of the metal oxide 230c are It is expected to suppress the diffusion to the insulator 250 side.
  • the metal oxide 230c has a stacked structure, and the oxide that does not contain In is positioned above the stacked structure, so that In that can diffuse toward the insulator 250 can be suppressed. Since the insulator 250 functions as a gate insulator, the characteristics of the transistor deteriorate when In is diffused. Therefore, by forming the metal oxide 230c into a stacked structure, a highly reliable display device can be provided.
  • a conductor 242 (a conductor 242a and a conductor 242b) functioning as a source electrode and a drain electrode is provided over the metal oxide 230b.
  • Conductors 242 include aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium, beryllium, indium, ruthenium, iridium, strontium, and lanthanum. It is preferable to use a metal element selected from, an alloy containing the above-described metal elements as a component, or an alloy in which the above-described metal elements are combined.
  • tantalum nitride, titanium nitride, tungsten, nitride containing titanium and aluminum, nitride containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, oxide containing strontium and ruthenium, oxide containing lanthanum and nickel, and the like are used. is preferred.
  • tantalum nitride, titanium nitride, nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, and oxides containing lanthanum and nickel are difficult to oxidize. It is preferable because it is a conductive material or a material that maintains conductivity even after absorbing oxygen.
  • the oxygen concentration in the vicinity of the conductor 242 of the metal oxide 230 may be reduced.
  • a metal compound layer containing the metal contained in the conductor 242 and the components of the metal oxide 230 may be formed in the vicinity of the conductor 242 of the metal oxide 230. In such a case, the carrier density increases in the region of the metal oxide 230 near the conductor 242, and the region becomes a low resistance region.
  • a region between the conductor 242a and the conductor 242b is formed so as to overlap with the opening of the insulator 280.
  • the conductor 260 can be arranged in a self-aligned manner between the conductor 242a and the conductor 242b.
  • Insulator 250 functions as a gate insulator.
  • the insulator 250 is preferably placed in contact with the top surface of the metal oxide 230c.
  • silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, silicon oxide to which fluorine is added, silicon oxide to which carbon is added, silicon oxide to which carbon and nitrogen are added, or silicon oxide having vacancies is used. be able to.
  • silicon oxide and silicon oxynitride are preferable because they are stable against heat.
  • the insulator 250 preferably has a reduced impurity concentration such as water or hydrogen.
  • the thickness of the insulator 250 is preferably 1 nm or more and 20 nm or less.
  • a metal oxide may be provided between the insulator 250 and the conductor 260 .
  • the metal oxide preferably suppresses oxygen diffusion from the insulator 250 to the conductor 260 . Accordingly, oxidation of the conductor 260 by oxygen in the insulator 250 can be suppressed.
  • the metal oxide may function as part of the gate insulator. Therefore, in the case where silicon oxide, silicon oxynitride, or the like is used for the insulator 250, a metal oxide that is a high-k material with a high dielectric constant is preferably used as the metal oxide.
  • the gate insulator has a stacked-layer structure of the insulator 250 and the metal oxide, the stacked-layer structure can be stable against heat and have a high relative dielectric constant. Therefore, the gate potential applied during transistor operation can be reduced while maintaining the physical film thickness of the gate insulator. Also, the equivalent oxide thickness (EOT) of the insulator that functions as the gate insulator can be reduced.
  • EOT equivalent oxide thickness
  • a metal oxide containing one or more selected from hafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, germanium, magnesium, or the like can be used.
  • the conductor 260 is shown as having a two-layer structure in FIG. 18, it may have a single-layer structure or a laminated structure of three or more layers.
  • the conductor 260a has the function of suppressing the diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, nitrogen oxide molecules (N 2 O, NO, NO 2 etc.), copper atoms and the like. It is preferable to use a conductor having a Alternatively, it is preferable to use a conductive material having a function of suppressing diffusion of oxygen (eg, at least one of oxygen atoms, oxygen molecules, and the like).
  • the conductor 260a has a function of suppressing diffusion of oxygen
  • oxygen contained in the insulator 250 can suppress oxidation of the conductor 260b and a decrease in conductivity.
  • the conductive material having a function of suppressing diffusion of oxygen tantalum, tantalum nitride, ruthenium, ruthenium oxide, or the like is preferably used, for example.
  • a conductive material containing tungsten, copper, or aluminum as its main component is preferably used for the conductor 260b.
  • the conductor 260 since the conductor 260 also functions as a wiring, a conductor with high conductivity is preferably used.
  • a conductive material whose main component is tungsten, copper, or aluminum can be used.
  • the conductor 260b may have a layered structure, for example, a layered structure of titanium or titanium nitride and the above conductive material.
  • the side surfaces of the metal oxide 230 are covered with the conductor 260 in the region where the metal oxide 230b does not overlap with the conductor 242, in other words, the channel formation region of the metal oxide 230. are placed.
  • the insulator 254 preferably functions as a barrier insulating film that prevents impurities such as water or hydrogen from entering the transistor 200A from the insulator 280 side.
  • insulator 254 preferably has a lower hydrogen permeability than insulator 224 .
  • the insulator 254 includes the sides of the metal oxide 230c, the top and sides of the conductor 242a, the top and sides of the conductor 242b, and the metal oxide 230a and the metal oxide 230b. It preferably touches the sides as well as the top surface of the insulator 224 .
  • hydrogen contained in the insulator 280 enters the metal oxide 230 from the top surface or the side surface of the conductor 242a, the conductor 242b, the metal oxide 230a, the metal oxide 230b, and the insulator 224. can be suppressed.
  • the insulator 254 preferably has a function of suppressing the diffusion of oxygen (eg, at least one of oxygen atoms, oxygen molecules, and the like) (the oxygen is less permeable).
  • insulator 254 preferably has a lower oxygen permeability than insulator 280 or insulator 224 .
  • the insulator 254 is preferably deposited using a sputtering method.
  • oxygen can be added to the vicinity of a region of the insulator 224 which is in contact with the insulator 254 . Accordingly, oxygen can be supplied from the region into the metal oxide 230 through the insulator 224 .
  • the insulator 254 has a function of suppressing upward diffusion of oxygen, diffusion of oxygen from the metal oxide 230 to the insulator 280 can be prevented.
  • the insulator 222 has a function of suppressing diffusion of oxygen downward, oxygen can be prevented from diffusing from the metal oxide 230 to the substrate side. In this manner, oxygen is supplied to the channel formation region of metal oxide 230 . Accordingly, oxygen vacancies in the metal oxide 230 can be reduced, and the normally-on state of the transistor can be suppressed.
  • an insulator containing an oxide of one or both of aluminum and hafnium is preferably deposited.
  • the insulator containing oxides of one or both of aluminum and hafnium aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate), or the like is preferably used.
  • the insulator 224, the insulator 250, and the metal oxide 230 are covered with the insulator 254 having a barrier property against hydrogen; and isolated from the insulator 250 .
  • entry of impurities such as hydrogen from the outside of the transistor 200A can be suppressed, so that the transistor 200A can have good electrical characteristics and reliability.
  • the insulator 280 is provided over the insulator 224 , the metal oxide 230 , and the conductor 242 with the insulator 254 interposed therebetween.
  • the insulator 280 is formed using silicon oxide, silicon oxynitride, silicon nitride oxide, silicon oxide to which fluorine is added, silicon oxide to which carbon is added, silicon oxide to which carbon and nitrogen are added, silicon oxide having vacancies, or the like. It is preferable to have In particular, silicon oxide and silicon oxynitride are preferable because they are thermally stable. In particular, a material such as silicon oxide, silicon oxynitride, or silicon oxide having vacancies is preferable because a region containing oxygen that is released by heating can be easily formed.
  • the concentration of impurities such as water or hydrogen in the insulator 280 is reduced. Also, the upper surface of the insulator 280 may be flattened.
  • the insulator 274 preferably functions as a barrier insulating film that prevents impurities such as water or hydrogen from entering the insulator 280 from above.
  • the insulator 274 an insulator that can be used for the insulator 214, the insulator 254, or the like may be used, for example.
  • An insulator 281 functioning as an interlayer film is preferably provided over the insulator 274 .
  • the insulator 281 preferably has a reduced concentration of impurities such as water or hydrogen in the film.
  • the conductors 240 a and 240 b are arranged in openings formed in the insulators 281 , 274 , 280 , and 254 .
  • the conductor 240a and the conductor 240b are provided to face each other with the conductor 260 interposed therebetween. Note that the top surfaces of the conductors 240 a and 240 b may be flush with the top surface of the insulator 281 .
  • the insulator 241a is provided in contact with the inner walls of the openings of the insulator 281, the insulator 274, the insulator 280, and the insulator 254, and the first conductor of the conductor 240a is formed in contact with the side surface of the insulator 241a. ing.
  • a conductor 242a is positioned at least part of the bottom of the opening, and the conductor 240a is in contact with the conductor 242a.
  • the insulator 241b is provided in contact with the inner walls of the openings of the insulator 281, the insulator 274, the insulator 280, and the insulator 254, and the first conductor of the conductor 240b is formed in contact with the side surface of the insulator 241b. It is A conductor 242b is positioned at least part of the bottom of the opening, and the conductor 240b is in contact with the conductor 242b.
  • a conductive material containing tungsten, copper, or aluminum as its main component is preferably used for the conductors 240a and 240b. Further, the conductor 240a and the conductor 240b may have a laminated structure.
  • the conductor in contact with the metal oxide 230a, the metal oxide 230b, the conductor 242, the insulator 254, the insulator 280, the insulator 274, and the insulator 281 contains the above water.
  • a conductor having a function of suppressing diffusion of impurities such as hydrogen is preferably used.
  • tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, ruthenium oxide, or the like is preferably used.
  • the conductive material having a function of suppressing diffusion of impurities such as water or hydrogen may be used in a single layer or a stacked layer.
  • the conductive material By using the conductive material, absorption of oxygen added to the insulator 280 by the conductors 240a and 240b can be suppressed. In addition, impurities such as water or hydrogen from a layer above the insulator 281 can be prevented from entering the metal oxide 230 through the conductors 240a and 240b.
  • An insulator that can be used for the insulator 254 or the like may be used as the insulator 241a and the insulator 241b, for example. Since the insulators 241a and 241b are provided in contact with the insulator 254, impurities such as water or hydrogen from the insulator 280 or the like are prevented from entering the metal oxide 230 through the conductors 240a and 240b. can. In addition, absorption of oxygen contained in the insulator 280 by the conductors 240a and 240b can be suppressed.
  • a conductor functioning as a wiring may be arranged in contact with the top surface of the conductor 240a and the top surface of the conductor 240b.
  • a conductive material containing tungsten, copper, or aluminum as a main component is preferably used for the conductor functioning as the wiring.
  • the conductor may have a laminated structure, for example, a laminated structure of titanium or titanium nitride and the above conductive material. The conductor may be formed so as to be embedded in an opening provided in the insulator.
  • an insulator substrate, a semiconductor substrate, or a conductor substrate may be used, for example.
  • insulator substrates include glass substrates, quartz substrates, sapphire substrates, stabilized zirconia substrates (yttria stabilized zirconia substrates, etc.), resin substrates, and the like.
  • semiconductor substrates include semiconductor substrates such as silicon and germanium, and compound semiconductor substrates made of silicon carbide, silicon germanium, gallium arsenide, indium phosphide, zinc oxide, and gallium oxide.
  • semiconductor substrate having an insulator region inside the semiconductor substrate such as an SOI (Silicon On Insulator) substrate.
  • Examples of conductive substrates include graphite substrates, metal substrates, alloy substrates, and conductive resin substrates. Alternatively, there are a substrate having a metal nitride, a substrate having a metal oxide, and the like. Furthermore, there are a substrate in which a conductor or a semiconductor is provided on an insulating substrate, a substrate in which a semiconductor substrate is provided with a conductor or an insulator, a substrate in which a conductor substrate is provided with a semiconductor or an insulator, and the like. Alternatively, these substrates provided with elements may be used. Elements provided on the substrate include a capacitive element, a resistance element, a switch element, a light emitting element, a memory element, and the like.
  • Insulators examples include oxides, nitrides, oxynitrides, oxynitrides, metal oxides, metal oxynitrides, metal oxynitrides, and the like having insulating properties.
  • thinning of gate insulators may cause problems such as leakage current.
  • a high-k material for an insulator functioning as a gate insulator voltage reduction during transistor operation can be achieved while maintaining a physical film thickness.
  • a material with a low dielectric constant for the insulator functioning as an interlayer film parasitic capacitance generated between wirings can be reduced. Therefore, the material should be selected according to the function of the insulator.
  • Gallium oxide, hafnium oxide, zirconium oxide, oxides containing aluminum and hafnium, oxynitrides containing aluminum and hafnium, oxides containing silicon and hafnium, and oxynitride containing silicon and hafnium are used as insulators with a high dielectric constant. and nitrides with silicon and hafnium.
  • Insulators with a low dielectric constant include silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, silicon oxide to which fluorine is added, silicon oxide to which carbon is added, silicon oxide to which carbon and nitrogen are added, and vacancies. There are silicon oxide, resin, and the like.
  • a transistor including an oxide semiconductor is surrounded by an insulator (such as the insulator 214, the insulator 222, the insulator 254, and the insulator 274) that has a function of suppressing permeation of impurities such as hydrogen and oxygen.
  • an insulator such as the insulator 214, the insulator 222, the insulator 254, and the insulator 274.
  • Insulators having a function of suppressing permeation of impurities such as hydrogen and oxygen include, for example, boron, carbon, nitrogen, oxygen, fluorine, magnesium, aluminum, silicon, phosphorus, chlorine, argon, gallium, germanium, yttrium, zirconium, Insulators containing lanthanum, neodymium, hafnium, or tantalum may be used in single layers or stacks.
  • an insulator having a function of suppressing permeation of impurities such as hydrogen and oxygen aluminum oxide, magnesium oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, Alternatively, a metal oxide such as tantalum oxide, or a metal nitride such as aluminum nitride, aluminum titanium nitride, titanium nitride, silicon nitride oxide, or silicon nitride can be used.
  • An insulator that functions as a gate insulator preferably has a region containing oxygen that is released by heating. For example, by forming a structure in which silicon oxide or silicon oxynitride having a region containing oxygen released by heating is in contact with the metal oxide 230, oxygen vacancies in the metal oxide 230 can be compensated.
  • Conductors include aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium, beryllium, indium, ruthenium, iridium, strontium, lanthanum, etc. It is preferable to use a metal element selected from, an alloy containing the above-described metal elements as a component, or an alloy in which the above-described metal elements are combined.
  • tantalum nitride, titanium nitride, tungsten, nitride containing titanium and aluminum, nitride containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, oxide containing strontium and ruthenium, oxide containing lanthanum and nickel, and the like are used. is preferred. Also, tantalum nitride, titanium nitride, nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, and oxides containing lanthanum and nickel are difficult to oxidize.
  • a conductive material or a material that maintains conductivity even after absorbing oxygen.
  • a semiconductor with high electrical conductivity typified by polycrystalline silicon containing an impurity element such as phosphorus, or a silicide such as nickel silicide may be used.
  • a plurality of conductors formed of any of the above materials may be stacked and used.
  • a laminated structure in which the material containing the metal element described above and the conductive material containing oxygen are combined may be used.
  • a laminated structure may be employed in which the material containing the metal element described above and the conductive material containing nitrogen are combined.
  • a laminated structure may be employed in which the material containing the metal element described above, the conductive material containing oxygen, and the conductive material containing nitrogen are combined.
  • a conductor functioning as a gate electrode has a stacked-layer structure in which a material containing the above metal element and a conductive material containing oxygen are combined. is preferred.
  • a conductive material containing oxygen is preferably provided on the channel formation region side.
  • a conductive material containing oxygen and a metal element contained in a metal oxide in which a channel is formed is preferably used as a conductor functioning as a gate electrode.
  • a conductive material containing the metal element and nitrogen described above may be used.
  • a conductive material containing nitrogen such as titanium nitride or tantalum nitride may be used.
  • indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, and silicon were added.
  • Indium tin oxide may also be used.
  • indium gallium zinc oxide containing nitrogen may be used.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • FIG. 19A is a diagram illustrating classification of crystal structures of oxide semiconductors, typically IGZO (a metal oxide containing In, Ga, and Zn).
  • IGZO a metal oxide containing In, Ga, and Zn
  • oxide semiconductors are roughly classified into “amorphous”, “crystalline”, and “crystal".
  • “Amorphous” includes completely amorphous.
  • “Crystalline” includes CAAC (c-axis-aligned crystalline), nc (nanocrystalline), and CAC (cloud-aligned composite). The classification of “Crystalline” excludes single crystal, poly crystal, and completely amorphous.
  • “Crystal” includes single crystal and poly crystal.
  • the structure within the thick frame shown in FIG. 19A is an intermediate state between "Amorphous” and “Crystal”, and is a structure belonging to the new crystalline phase. . That is, the structure can be rephrased as a structure completely different from the energetically unstable “Amorphous” and “Crystal”.
  • FIG. 19B shows an XRD spectrum obtained by GIXD (Grazing-Incidence XRD) measurement of a CAAC-IGZO film classified as "Crystalline".
  • the GIXD method is also called a thin film method or a Seemann-Bohlin method.
  • the XRD spectrum obtained by the GIXD measurement shown in FIG. 19B is simply referred to as the XRD spectrum.
  • the thickness of the CAAC-IGZO film shown in FIG. 19B is 500 nm.
  • the crystal structure of a film or substrate can be evaluated by a diffraction pattern (also referred to as a nano beam electron diffraction pattern) observed by nano beam electron diffraction (NBED).
  • a diffraction pattern also referred to as a nano beam electron diffraction pattern
  • NBED nano beam electron diffraction
  • oxide semiconductors may be classified differently from that in FIG. 19A when its crystal structure is focused.
  • oxide semiconductors are classified into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors.
  • non-single-crystal oxide semiconductors include the above CAAC-OS and nc-OS.
  • Non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, amorphous-like oxide semiconductors (a-like OS), amorphous oxide semiconductors, and the like.
  • CAAC-OS is an oxide semiconductor that includes a plurality of crystal regions, and the c-axes of the plurality of crystal regions are oriented in a specific direction. Note that the specific direction is the thickness direction of the CAAC-OS film, the normal direction to the formation surface of the CAAC-OS film, or the normal direction to the surface of the CAAC-OS film.
  • a crystalline region is a region having periodicity in atomic arrangement. If the atomic arrangement is regarded as a lattice arrangement, the crystalline region is also a region with a uniform lattice arrangement.
  • CAAC-OS has a region where a plurality of crystal regions are connected in the a-b plane direction, and the region may have strain.
  • the strain refers to a portion where the orientation of the lattice arrangement changes between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement in a region where a plurality of crystal regions are connected. That is, CAAC-OS is an oxide semiconductor that is c-axis oriented and has no obvious orientation in the ab plane direction.
  • each of the plurality of crystal regions is composed of one or a plurality of minute crystals (crystals having a maximum diameter of less than 10 nm).
  • the maximum diameter of the crystalline region is less than 10 nm.
  • the size of the crystal region may be about several tens of nanometers.
  • CAAC-OS is a layer containing indium (In) and oxygen ( It tends to have a layered crystal structure (also referred to as a layered structure) in which an In layer) and a layer containing the element M, zinc (Zn), and oxygen (hereinafter, a (M, Zn) layer) are laminated.
  • the (M, Zn) layer may contain indium.
  • the In layer contains the element M.
  • the In layer may contain Zn.
  • the layered structure is observed as a lattice image, for example, in a high-resolution TEM image.
  • a plurality of bright points are observed in the electron beam diffraction pattern of the CAAC-OS film.
  • a certain spot and another spot are observed at point-symmetrical positions with respect to the spot of the incident electron beam that has passed through the sample (also referred to as a direct spot) as the center of symmetry.
  • the lattice arrangement in the crystal region is basically a hexagonal lattice, but the unit lattice is not always regular hexagon and may be non-regular hexagon. Moreover, the distortion may have a lattice arrangement of pentagons, heptagons, or the like. Note that in CAAC-OS, no clear crystal grain boundary can be observed even near the strain. That is, it can be seen that the distortion of the lattice arrangement suppresses the formation of grain boundaries. This is because the CAAC-OS can tolerate distortion due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and that the bond distance between atoms changes due to the substitution of metal atoms. It is considered to be for
  • a crystal structure in which clear grain boundaries are confirmed is called a so-called polycrystal.
  • a grain boundary becomes a recombination center, and there is a high possibility that carriers are trapped and cause a decrease in the on-state current of a transistor, a decrease in field-effect mobility, and the like. Therefore, a CAAC-OS in which no clear grain boundaries are observed is one of crystalline oxides having a crystal structure suitable for a semiconductor layer of a transistor.
  • a structure containing Zn is preferable for forming a CAAC-OS.
  • In--Zn oxide and In--Ga--Zn oxide are preferable because they can suppress the generation of grain boundaries more than In oxide.
  • a CAAC-OS is an oxide semiconductor with high crystallinity and no clear grain boundaries. Therefore, it can be said that the decrease in electron mobility due to grain boundaries is less likely to occur in CAAC-OS.
  • a CAAC-OS can be said to be an oxide semiconductor with few impurities or defects (such as oxygen vacancies). Therefore, an oxide semiconductor including CAAC-OS has stable physical properties. Therefore, an oxide semiconductor including CAAC-OS is resistant to heat and has high reliability.
  • CAAC-OS is also stable against high temperatures (so-called thermal budget) in the manufacturing process. Therefore, the use of the CAAC-OS for the OS transistor can increase the degree of freedom in the manufacturing process.
  • nc-OS has periodic atomic arrangement in a minute region (eg, a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm).
  • the nc-OS has minute crystals.
  • the size of the minute crystal is, for example, 1 nm or more and 10 nm or less, particularly 1 nm or more and 3 nm or less, the minute crystal is also called a nanocrystal.
  • nc-OS does not show regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed in the entire film.
  • an nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor depending on the analysis method.
  • an nc-OS film is subjected to structural analysis using an XRD apparatus, out-of-plane XRD measurement using ⁇ /2 ⁇ scanning does not detect a peak indicating crystallinity.
  • an nc-OS film is subjected to electron beam diffraction (also referred to as selected area electron beam diffraction) using an electron beam with a probe diameter larger than that of nanocrystals (for example, 50 nm or more), a diffraction pattern such as a halo pattern is obtained. is observed.
  • an nc-OS film is subjected to electron diffraction (also referred to as nanobeam electron diffraction) using an electron beam with a probe diameter close to or smaller than the size of a nanocrystal (for example, 1 nm or more and 30 nm or less)
  • an electron beam diffraction pattern is obtained in which a plurality of spots are observed within a ring-shaped area centered on the direct spot.
  • An a-like OS is an oxide semiconductor having a structure between an nc-OS and an amorphous oxide semiconductor.
  • An a-like OS has void or low density regions. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS. In addition, the a-like OS has a higher hydrogen concentration in the film than the nc-OS and the CAAC-OS.
  • CAC-OS relates to material composition.
  • CAC-OS is, for example, one structure of a material in which elements constituting a metal oxide are unevenly distributed with a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or in the vicinity thereof.
  • the metal oxide one or more metal elements are unevenly distributed, and the region having the metal element has a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or a size in the vicinity thereof.
  • the mixed state is also called mosaic or patch.
  • CAC-OS is a structure in which the material is separated into a first region and a second region to form a mosaic shape, and the first region is distributed in the film (hereinafter, also referred to as a cloud shape). ). That is, CAC-OS is a composite metal oxide in which the first region and the second region are mixed.
  • the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in the In—Ga—Zn oxide are represented by [In], [Ga], and [Zn], respectively.
  • the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film.
  • the second region is a region where [Ga] is greater than [Ga] in the composition of the CAC-OS film.
  • the first region is a region in which [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region.
  • the second region is a region in which [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.
  • the first region is a region mainly composed of indium oxide, indium zinc oxide, or the like.
  • the second region is a region containing gallium oxide, gallium zinc oxide, or the like as a main component. That is, the first region can be rephrased as a region containing In as a main component. Also, the second region can be rephrased as a region containing Ga as a main component.
  • a region containing In as the main component (first 1 region) and a region containing Ga as a main component (second region) are unevenly distributed and can be confirmed to have a mixed structure.
  • the conductivity attributed to the first region and the insulation attributed to the second region complementarily act to provide a switching function (on/off function).
  • a switching function on/off function
  • CAC-OS a part of the material has a conductive function
  • a part of the material has an insulating function
  • the whole material has a semiconductor function.
  • Oxide semiconductors have various structures and each has different characteristics.
  • An oxide semiconductor of one embodiment of the present invention includes two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, a CAC-OS, an nc-OS, and a CAAC-OS. may
  • an oxide semiconductor with low carrier concentration is preferably used for a transistor.
  • the carrier concentration of the oxide semiconductor is 1 ⁇ 10 17 cm ⁇ 3 or less, preferably 1 ⁇ 10 15 cm ⁇ 3 or less, more preferably 1 ⁇ 10 13 cm ⁇ 3 or less, more preferably 1 ⁇ 10 11 cm ⁇ 3 or less. 3 or less, more preferably less than 1 ⁇ 10 10 cm ⁇ 3 and 1 ⁇ 10 ⁇ 9 cm ⁇ 3 or more.
  • the impurity concentration in the oxide semiconductor film may be lowered to lower the defect level density.
  • a low impurity concentration and a low defect level density are referred to as high-purity intrinsic or substantially high-purity intrinsic.
  • an oxide semiconductor with a low carrier concentration is sometimes referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor.
  • the trap level density may also be low.
  • a charge trapped in a trap level of an oxide semiconductor takes a long time to disappear and may behave like a fixed charge. Therefore, a transistor whose channel formation region is formed in an oxide semiconductor with a high trap level density might have unstable electrical characteristics.
  • Impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon, and the like.
  • the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon in the vicinity of the interface with the oxide semiconductor are 2 ⁇ 10 18 atoms/cm 3 or less, preferably 2 ⁇ 10 atoms/cm 3 or less. 10 17 atoms/cm 3 or less.
  • the concentration of alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS is set to 1 ⁇ 10 18 atoms/cm 3 or less, preferably 2 ⁇ 10 16 atoms/cm 3 or less.
  • the nitrogen concentration in the oxide semiconductor obtained by SIMS is less than 5 ⁇ 10 19 atoms/cm 3 , preferably 5 ⁇ 10 18 atoms/cm 3 or less, more preferably 1 ⁇ 10 18 atoms/cm 3 or less. , more preferably 5 ⁇ 10 17 atoms/cm 3 or less.
  • Hydrogen contained in an oxide semiconductor reacts with oxygen that bonds to a metal atom to form water, which may cause oxygen vacancies. When hydrogen enters the oxygen vacancies, electrons, which are carriers, may be generated. In addition, part of hydrogen may bond with oxygen that bonds with a metal atom to generate an electron, which is a carrier. Therefore, a transistor including an oxide semiconductor containing hydrogen is likely to have normally-on characteristics. Therefore, hydrogen in the oxide semiconductor is preferably reduced as much as possible.
  • the hydrogen concentration obtained by SIMS is less than 1 ⁇ 10 20 atoms/cm 3 , preferably less than 1 ⁇ 10 19 atoms/cm 3 , more preferably less than 5 ⁇ 10 18 atoms/cm. Less than 3 , more preferably less than 1 ⁇ 10 18 atoms/cm 3 .
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • FIG. 20A is a diagram showing the appearance of the head mounted display 8200.
  • FIG. 20A is a diagram showing the appearance of the head mounted display 8200.
  • the head mounted display 8200 has a mounting portion 8201, a lens 8202, a main body 8203, a display portion 8204, a cable 8205 and the like.
  • a battery 8206 is built in the mounting portion 8201 .
  • Cable 8205 supplies power from battery 8206 to body 8203 .
  • a main body 8203 includes a wireless receiver or the like, and can display an image corresponding to received image data or the like on the display portion 8204 .
  • the user's line of sight can be used as an input means by capturing the movement of the user's eyeballs or eyelids with a camera provided in the main body 8203 and calculating the coordinates of the user's line of sight based on the information. can.
  • the mounting portion 8201 may be provided with a plurality of electrodes at positions where it touches the user.
  • the main body 8203 may have a function of recognizing the line of sight of the user by detecting the current flowing through the electrodes as the user's eyeballs move. It may also have a function of monitoring the user's pulse by detecting the current flowing through the electrode.
  • the mounting unit 8201 may have various sensors such as a temperature sensor, a pressure sensor, an acceleration sensor, etc., and may have a function of displaying the biological information of the user on the display unit 8204 . Alternatively, the movement of the user's head or the like may be detected, and the image displayed on the display unit 8204 may be changed according to the movement.
  • the display device of one embodiment of the present invention can be applied to the display portion 8204 .
  • the power consumption of the head mounted display 8200 can be reduced, so that the head mounted display 8200 can be used continuously for a long period of time.
  • the size and weight of the battery 8206 can be reduced, so that the head mounted display 8200 can be reduced in size and weight. This reduces the burden on the user of the head mounted display 8200, making it less likely that the user will feel fatigue.
  • FIG. 20B, 20C, and 20D are diagrams showing the appearance of the head mounted display 8300.
  • FIG. A head mounted display 8300 includes a housing 8301 , a display portion 8302 , a band-shaped fixture 8304 , and a pair of lenses 8305 .
  • a battery 8306 is incorporated in the housing 8301, and power can be supplied from the battery 8306 to the display portion 8302 and the like.
  • the user can see the display on the display portion 8302 through the lens 8305 .
  • the display portion 8302 By arranging the display portion 8302 in a curved manner, the user can feel a high presence.
  • the structure in which one display portion 8302 is provided is exemplified in this embodiment mode, the present invention is not limited to this and, for example, a structure in which two display portions 8302 are provided may be employed. In this case, if one display unit is arranged for one eye of the user, it is possible to perform three-dimensional display using parallax.
  • the display device of one embodiment of the present invention can be applied to the display portion 8302 .
  • the power consumption of the head mounted display 8300 can be reduced, so that the head mounted display 8300 can be used continuously for a long period of time.
  • the size and weight of the battery 8306 can be reduced, so that the head mounted display 8300 can be reduced in size and weight. This reduces the burden on the user of the head mounted display 8300, making it less likely that the user will feel tired.
  • FIGS. 21A and 21B show examples of electronic devices different from the electronic devices shown in FIGS. 20A to 20D.
  • the electronic device shown in FIGS. 21A and 21B includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006, sensors 9007 (force, displacement, position, speed , acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared rays measuring function), and a battery 9009 and the like.
  • the electronic devices shown in FIGS. 21A and 21B have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date, time, etc., and a function to control processing by various software (programs).
  • wireless communication function function to connect to various computer networks using wireless communication function, function to transmit or receive various data using wireless communication function, read programs or data recorded on recording media It can have a function of displaying on a display portion, and the like.
  • the functions that the electronic devices shown in FIGS. 21A and 21B can have are not limited to these, and can have various functions.
  • the electronic device may have a plurality of display portions.
  • a camera or the like is provided in the electronic device to take still images, to take moving images, to save the shot images in a recording medium (external or built into the camera), and to display the shot images on the display unit. and the like.
  • FIGS. 21A and 21B Details of the electronic device shown in FIGS. 21A and 21B will be described below.
  • FIG. 21A is a perspective view showing a mobile information terminal 9101.
  • the mobile information terminal 9101 has one or a plurality of functions selected from, for example, a telephone, notebook, information browsing device, and the like. Specifically, it can be used as a smartphone. Also, the mobile information terminal 9101 can display characters or images on its multiple surfaces. For example, three operation buttons 9050 (also referred to as operation icons or simply icons) can be displayed on one surface of the display portion 9001 . In addition, information 9051 indicated by a dashed rectangle can be displayed on another surface of the display portion 9001 .
  • Examples of the information 9051 include a display notifying an incoming e-mail or SNS (social networking service) or a phone call, the title of the e-mail or SNS, the name of the sender of the e-mail or SNS, the date and time, the time, There are remaining battery power, strength of antenna reception, and so on.
  • an operation button 9050 or the like may be displayed instead of the information 9051 at the position where the information 9051 is displayed.
  • the display device of one embodiment of the present invention can be applied to the portable information terminal 9101 . Accordingly, power consumption of the portable information terminal 9101 can be reduced, so that the portable information terminal 9101 can be used continuously for a long period of time. Further, by reducing the power consumption of the portable information terminal 9101, the size and weight of the battery 9009 can be reduced; therefore, the portable information terminal 9101 can be reduced in size and weight. Accordingly, portability of the portable information terminal 9101 can be improved.
  • FIG. 21B is a perspective view showing a wristwatch-type mobile information terminal 9200.
  • the personal digital assistant 9200 can run various applications such as mobile phone, e-mail, text viewing and writing, music playback, Internet communication, computer games, and the like.
  • the display portion 9001 has a curved display surface, and display can be performed along the curved display surface.
  • FIG. 21B shows an example in which a time 9251, an operation button 9252 (also referred to as an operation icon or simply an icon), and content 9253 are displayed on the display unit 9001.
  • FIG. Content 9253 can be, for example, a video.
  • the mobile information terminal 9200 is capable of performing short-range wireless communication according to communication standards. For example, by intercommunicating with a headset capable of wireless communication, hands-free communication is also possible.
  • the portable information terminal 9200 has a connection terminal 9006 and can directly exchange data with another information terminal through a connector. Also, charging can be performed through the connection terminal 9006 . Note that the charging operation may be performed by wireless power supply without using the connection terminal 9006 .
  • the display device of one embodiment of the present invention can be applied to the portable information terminal 9200 . Accordingly, power consumption of the portable information terminal 9200 can be reduced, so that the portable information terminal 9200 can be used continuously for a long period of time. Further, by reducing the power consumption of the portable information terminal 9200, the size and weight of the battery 9009 can be reduced; therefore, the portable information terminal 9200 can be reduced in size and weight. Thereby, the portability of the portable information terminal 9200 can be improved.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • each embodiment can be combined with any structure described in another embodiment as appropriate to be one embodiment of the present invention. Moreover, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be combined as appropriate.
  • the content (may be part of the content) described in one embodiment may be another content (may be part of the content) described in that embodiment, and/or one or more
  • the contents described in another embodiment (or part of the contents) can be applied, combined, or replaced.
  • the content described in the embodiments means the content described using various drawings or the content described using the sentences described in the specification in each embodiment.
  • constituent elements are classified by function and shown as blocks independent of each other.
  • it is difficult to separate the constituent elements according to their functions and there may be cases where one circuit is associated with a plurality of functions or a single function is associated with a plurality of circuits.
  • the blocks in the block diagrams are not limited to the elements described in the specification and may be interchanged as appropriate depending on the context.
  • electrode and “wiring” in this specification and the like do not functionally limit these components.
  • an “electrode” may be used as part of a “wiring” and vice versa.
  • the terms “electrodes” and “wirings” also include the case where a plurality of “electrodes” or “wirings” are integrally formed.
  • a voltage is a potential difference from a reference potential.
  • the reference potential is a ground voltage
  • the voltage can be translated into a potential.
  • Ground potential does not necessarily mean 0V. Note that the potential is relative, and the potential applied to the wiring or the like may be changed depending on the reference potential.
  • a switch has a function of being in a conducting state (on state) or a non-conducting state (off state) and controlling whether or not current flows.
  • a switch has a function of selecting and switching a path through which current flows.
  • the channel length refers to, for example, a region in which a semiconductor (or a portion of the semiconductor in which current flows when the transistor is on) overlaps with a gate in a top view of a transistor, or a channel is formed.
  • the channel width refers to, for example, a region where a semiconductor (or a portion of the semiconductor where current flows when the transistor is on) overlaps with a gate electrode, or a region where a channel is formed. is the length of the part where the drain and the drain face each other.
  • a and B are connected includes not only direct connection between A and B, but also electrical connection.
  • a and B are electrically connected means that when there is an object having some kind of electrical action between A and B, an electric signal can be exchanged between A and B. What to say.
  • Example 2 In this example, a light-emitting device 1, a light-emitting device 2, and a light-emitting device 3 of one embodiment of the present invention will be described with reference to FIGS.
  • FIG. 22 is a diagram illustrating the configuration of the light emitting device 550G.
  • FIG. 23 is a diagram illustrating the configuration of the light emitting device 550B.
  • FIG. 24 is a diagram illustrating the configuration of the light emitting device 550R.
  • FIG. 25 is a diagram for explaining the current density-luminance characteristics of Light-Emitting Device 1, Light-Emitting Device 2, and Light-Emitting Device 3.
  • FIG. 25 is a diagram for explaining the current density-luminance characteristics of Light-Emitting Device 1, Light-Emitting Device 2, and Light-Emitting Device 3.
  • FIG. 26 is a diagram for explaining the luminance-current efficiency characteristics of Light-Emitting Device 1, Light-Emitting Device 2, and Light-Emitting Device 3.
  • FIG. 26 is a diagram for explaining the luminance-current efficiency characteristics of Light-Emitting Device 1, Light-Emitting Device 2, and Light-Emitting Device 3.
  • FIG. 27 is a diagram for explaining the voltage-luminance characteristics of Light-Emitting Device 1, Light-Emitting Device 2, and Light-Emitting Device 3.
  • FIG. 27 is a diagram for explaining the voltage-luminance characteristics of Light-Emitting Device 1, Light-Emitting Device 2, and Light-Emitting Device 3.
  • FIG. 28 is a diagram for explaining voltage-current characteristics of light-emitting device 1, light-emitting device 2, and light-emitting device 3.
  • FIG. 28 is a diagram for explaining voltage-current characteristics of light-emitting device 1, light-emitting device 2, and light-emitting device 3.
  • FIG. 29 is a diagram for explaining emission spectra when light emitting device 1, light emitting device 2, and light emitting device 3 are caused to emit light at a luminance of 1000 cd/m 2 .
  • the manufactured light-emitting device 1 described in this example has the same configuration as the light-emitting device 550G (see FIG. 22).
  • Table 1 shows the configuration of the light-emitting device 1. Structural formulas of materials used for the light-emitting device described in this example are shown below.
  • a reflective film REFG was formed. Specifically, it was formed by a sputtering method using silver (Ag) as a target.
  • the reflective film REFG contains Ag and has a thickness of 100 nm.
  • an electrode 551G was formed on the reflective film REFG. Specifically, it was formed by a sputtering method using indium oxide-tin oxide (abbreviation: ITSO) containing silicon or silicon oxide as a target.
  • ITSO indium oxide-tin oxide
  • the electrode 551G includes ITSO and has a thickness of 10 nm and an area of 4 mm 2 (2 mm ⁇ 2 mm).
  • the substrate on which the electrode 551G was formed was washed with water, baked at 200° C. for 1 hour, and then subjected to UV ozone treatment for 370 seconds. After that, the substrate was introduced into a vacuum deposition apparatus whose inside was evacuated to about 10 ⁇ 4 Pa, and subjected to vacuum baking at 170° C. for 30 minutes in a heating chamber in the vacuum deposition apparatus. After that, the substrate was allowed to cool for about 30 minutes.
  • layer 112G-1 was formed over layer 104G. Specifically, the materials were deposited using a resistance heating method.
  • layer 112G-1 comprises PCBBiF and has a thickness of 15 nm.
  • layer 112G-2 was formed over layer 112G-1. Specifically, the materials were deposited using a resistance heating method.
  • layer 112G-2 contains 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP) and has a thickness of 20 nm.
  • PCBBi1BP 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine
  • 8BP-4mDBtPBfpm 9-(2-
  • layer 113G-1 was formed over layer 111G. Specifically, the materials were deposited using a resistance heating method.
  • layer 113G-1 comprises 8BP-4mDBtPBfpm and has a thickness of 10 nm.
  • layer 113G-2 was formed over layer 113G-1. Specifically, the materials were deposited using a resistance heating method.
  • the layer 113G-2 contains 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) and has a thickness of 20 nm.
  • layer 105G2 was formed over layer 113G-2. Specifically, the materials were deposited using a resistance heating method.
  • the layer 105G2 contains lithium oxide (abbreviation: Li2O) and has a thickness of 0.1 nm.
  • the layer 106G1 contains copper phthalocyanine (abbreviation: CuPc) and has a thickness of 2 nm.
  • layer 106G2 was formed on layer 106G1. Specifically, the materials were co-evaporated using a resistance heating method.
  • layer 112G2-1 comprises PCBBiF and has a thickness of 20 nm.
  • layer 112G2-2 was formed on layer 112G2-1. Specifically, the materials were deposited using a resistance heating method.
  • layer 112G2-2 includes PCBBi1BP and has a thickness of 20 nm.
  • layer 111G2 was formed on layer 112G2-2. Specifically, the materials were co-evaporated using a resistance heating method.
  • layer 113G2-1 was formed on layer 111G2. Specifically, the materials were deposited using a resistance heating method.
  • layer 113G2-1 comprises 8BP-4mDBtPBfpm and has a thickness of 10 nm.
  • layer 113G2-2 was formed on layer 113G2-1. Specifically, the materials were deposited using a resistance heating method.
  • layer 113G2-2 contains NBPhen and has a thickness of 20 nm.
  • layer 105G was formed over layer 113G2-2. Specifically, the materials were deposited using a resistance heating method.
  • the layer 105G contains lithium fluoride (abbreviation: LiF) and has a thickness of 1 nm.
  • LiF lithium fluoride
  • electrode 552G was formed on layer 105G. Specifically, the materials were co-evaporated using a resistance heating method.
  • a layer CAPG was formed over electrode 552G. Specifically, the materials were deposited using a resistance heating method.
  • the layer CAPG contains 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II) and has a thickness of 70 nm.
  • the manufactured light emitting device 2 described in this example has the same configuration as the light emitting device 550B (see FIG. 23).
  • Table 2 shows the configuration of the light emitting device 2. Structural formulas of materials used for the light-emitting device described in this example are shown below.
  • a reflective film REFB was formed. Specifically, it was formed by a sputtering method using silver (Ag) as a target.
  • the reflective film REFB contains Ag and has a thickness of 100 nm.
  • an electrode 551B was formed on the reflective film REFB. Specifically, it was formed by a sputtering method using indium oxide-tin oxide (abbreviation: ITSO) containing silicon or silicon oxide as a target.
  • ITSO indium oxide-tin oxide
  • the electrode 551B includes ITSO and has a thickness of 85 nm and an area of 4 mm 2 (2 mm ⁇ 2 mm).
  • the substrate on which the electrode 551B was formed was washed with water, baked at 200° C. for 1 hour, and then subjected to UV ozone treatment for 370 seconds. After that, the substrate was introduced into a vacuum deposition apparatus whose inside was evacuated to about 10 ⁇ 4 Pa, and subjected to vacuum baking at 170° C. for 30 minutes in a heating chamber in the vacuum deposition apparatus. After that, the substrate was allowed to cool for about 30 minutes.
  • layer 104B was formed over electrode 551B. Specifically, the materials were co-evaporated using a resistance heating method.
  • layer 104B includes N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf) and OCHD-003 as BBABnf:OCHD.
  • BBABnf N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine
  • -003 1:0.10 (weight ratio) with a thickness of 10 nm.
  • layer 112B-1 was formed over layer 104B. Specifically, the materials were deposited using a resistance heating method.
  • layer 112B-1 comprises BBABnf and has a thickness of 25 nm.
  • layer 112B-2 was formed over layer 112B-1. Specifically, the materials were deposited using a resistance heating method.
  • layer 112B-2 contains 3,3'-(naphthalene-1,4-diyl)bis(9-phenyl-9H-carbazole (abbreviation: PCzN2) and has a thickness of 10 nm.
  • layer 113B-1 was formed over layer 111B. Specifically, the materials were co-evaporated using a resistance heating method.
  • ZADN 2- ⁇ 4-[9,10-di(naphthalen-2-yl)-2-anthryl]phenyl ⁇ -1-phenyl-1H-benzimidazole
  • Liq hydroxyquinolinato-lithium
  • layer 113B-2 was formed over layer 113B-1. Specifically, the materials were deposited using a resistance heating method.
  • layer 113B-2 includes NBPhen and has a thickness of 20 nm.
  • layer 105B2 was formed over layer 113B-2. Specifically, the materials were deposited using a resistance heating method.
  • layer 105B2 contains Li 2 O and has a thickness of 0.05 nm.
  • layer 106B1 comprises CuPc and has a thickness of 2 nm.
  • layer 106B2 was formed over layer 106B1. Specifically, the materials were co-evaporated using a resistance heating method.
  • layer 112B2-1 comprises BBABnf and has a thickness of 25 nm.
  • layer 112B2-2 was formed over layer 112B2-1. Specifically, the materials were deposited using a resistance heating method.
  • layer 112B2-2 includes PCzN2 and has a thickness of 10 nm.
  • layer 111B2 was formed over layer 112B2-2. Specifically, the materials were co-evaporated using a resistance heating method.
  • layer 113B2-1 was formed on layer 111B2. Specifically, the materials were co-evaporated using a resistance heating method.
  • layer 113B2-2 was formed on layer 113B2-1. Specifically, the materials were deposited using a resistance heating method.
  • layer 113B2-2 includes NBPhen and has a thickness of 30 nm.
  • layer 105B was formed over layer 113B2-2. Specifically, the materials were deposited using a resistance heating method.
  • layer 105B contains LiF and has a thickness of 1 nm.
  • electrode 552B was formed on layer 105B. Specifically, the materials were co-evaporated using a resistance heating method.
  • layer CAPB was formed over electrode 552B. Specifically, the materials were deposited using a resistance heating method.
  • the layer CAPB comprises DBT3P-II and has a thickness of 80 nm.
  • the manufactured light-emitting device 3 described in this example has the same configuration as the light-emitting device 550R (see FIG. 24).
  • Table 3 shows the configuration of the light-emitting device 3. Structural formulas of materials used for the light-emitting device described in this example are shown below.
  • a reflective film REFR was formed. Specifically, it was formed by a sputtering method using silver (Ag) as a target.
  • the reflective film REFR contains Ag and has a thickness of 100 nm.
  • an electrode 551R was formed on the reflective film REFR. Specifically, it was formed by a sputtering method using indium oxide-tin oxide (abbreviation: ITSO) containing silicon or silicon oxide as a target.
  • ITSO indium oxide-tin oxide
  • the electrode 551R contains ITSO and has a thickness of 10 nm and an area of 4 mm 2 (2 mm ⁇ 2 mm).
  • the substrate on which the electrode 551R was formed was washed with water, baked at 200° C. for 1 hour, and then subjected to UV ozone treatment for 370 seconds. After that, the substrate was introduced into a vacuum deposition apparatus whose inside was evacuated to about 10 ⁇ 4 Pa, and subjected to vacuum baking at 170° C. for 30 minutes in a heating chamber in the vacuum deposition apparatus. After that, the substrate was allowed to cool for about 30 minutes.
  • layer 104R was formed on electrode 551R. Specifically, the materials were co-evaporated using a resistance heating method.
  • layer 112R was formed over layer 104R. Specifically, the materials were deposited using a resistance heating method.
  • layer 112R comprises PCBBiF and has a thickness of 70 nm.
  • layer 111R was formed on layer 112R. Specifically, the materials were co-evaporated using a resistance heating method.
  • layer 113R-1 was formed on layer 111R. Specifically, the materials were deposited using a resistance heating method.
  • layer 113R-1 comprises 9mDBtBPNfpr and has a thickness of 10 nm.
  • layer 113R-2 was formed over layer 113R-1. Specifically, the materials were deposited using a resistance heating method.
  • layer 113R-2 includes NBPhen and has a thickness of 20 nm.
  • layer 105R2 was formed over layer 113R-2. Specifically, the materials were deposited using a resistance heating method.
  • layer 105R2 contains Li 2 O and has a thickness of 0.1 nm.
  • layer 106R1 was formed over layer 105R2. Specifically, the materials were deposited using a resistance heating method.
  • layer 106R1 comprises CuPC and has a thickness of 2 nm.
  • layer 112R2 was formed over layer 106R2. Specifically, the materials were deposited using a resistance heating method.
  • layer 112R2 comprises PCBBiF and has a thickness of 40 nm.
  • layer 113R2-1 was formed on layer 111R2. Specifically, the materials were deposited using a resistance heating method.
  • layer 113R2-1 comprises 9mDBtBPNfpr and has a thickness of 20 nm.
  • layer 113R2-2 was formed on layer 113R2-1. Specifically, the materials were deposited using a resistance heating method.
  • layer 113R2-2 includes NBPhen and has a thickness of 20 nm.
  • layer 105R-1 was formed over layer 113R2-2. Specifically, the materials were deposited using a resistance heating method.
  • layer 105R-1 contains LiF and has a thickness of 1 nm.
  • layer 105R-2 was formed over layer 105R-1. Specifically, the materials were deposited using a resistance heating method.
  • layer 105R-2 contains Yb and has a thickness of 0.8 nm.
  • electrode 552R was formed on layer 105R-2. Specifically, the materials were co-evaporated using a resistance heating method.
  • a layer CAPR was formed over electrode 552R. Specifically, the materials were deposited using a resistance heating method.
  • the layer CAPR comprises DBT3P-II and has a thickness of 70 nm.
  • Light-Emitting Device 1 When powered, light emitting device 1 emitted light ELG and light ELG2 (see FIG. 22). Also, the light-emitting device 2 emitted light ELB and light ELB2 (see FIG. 23). Also, the light-emitting device 3 emitted light ELR and light ELR2 (see FIG. 24).
  • the operating characteristics of Light Emitting Device 1, Light Emitting Device 2 and Light Emitting Device 3 were measured at room temperature (see FIGS. 25-29). A spectroradiometer (SR-UL1R manufactured by Topcon Corporation) was used to measure luminance, CIE chromaticity and emission spectrum.
  • Table 4 shows main initial characteristics when the fabricated light-emitting device emits light with a luminance of about 1000 cd/m 2 . Table 4 also lists the properties of other light-emitting devices whose constructions are described below.
  • Light-emitting device 1, light-emitting device 2 and light-emitting device 3 were found to exhibit good characteristics.
  • Example 1 In this example, a light-emitting device 4 and a light-emitting device 5 of one embodiment of the present invention will be described with reference to FIGS.
  • FIG. 30 is a diagram illustrating the configuration of the light emitting device 550G.
  • FIG. 31 is a diagram illustrating the configuration of the light emitting device 550G.
  • FIG. 32 is a diagram illustrating the current density-luminance characteristics of light-emitting device 4 and light-emitting device 5.
  • FIG. 32 is a diagram illustrating the current density-luminance characteristics of light-emitting device 4 and light-emitting device 5.
  • FIG. 33 is a diagram illustrating luminance-current efficiency characteristics of light-emitting device 4 and light-emitting device 5.
  • FIG. 33 is a diagram illustrating luminance-current efficiency characteristics of light-emitting device 4 and light-emitting device 5.
  • FIG. 34 is a diagram illustrating voltage-luminance characteristics of light-emitting device 4 and light-emitting device 5.
  • FIG. 34 is a diagram illustrating voltage-luminance characteristics of light-emitting device 4 and light-emitting device 5.
  • FIG. 35 is a diagram illustrating the voltage-current characteristics of light-emitting device 4 and light-emitting device 5.
  • FIG. 36 is a diagram for explaining emission spectra when the light-emitting device 4 and the light-emitting device 5 emit light at a luminance of 1000 cd/m 2 .
  • Light-Emitting Device 5 The manufactured light-emitting device 4 and light-emitting device 5 described in this example have the same configuration as the light-emitting device 550G (see FIG. 30).
  • Table 5 shows the configurations of Light-Emitting Device 4 and Light-Emitting Device 5 .
  • Structural formulas of materials used for the light-emitting device described in this example are shown below.
  • a reflective film REFG was formed. Specifically, it was formed by a sputtering method using an alloy containing silver (Ag), palladium (Pd), and copper (Cu) (abbreviation: APC) as a target.
  • the reflective film REFG includes APC and has a thickness of 100 nm.
  • an electrode 551G was formed on the reflective film REFG. Specifically, it was formed by a sputtering method using indium oxide-tin oxide (abbreviation: ITSO) containing silicon or silicon oxide as a target.
  • ITSO indium oxide-tin oxide
  • the electrode 551G includes ITSO and has a thickness of 100 nm and an area of 4 mm 2 (2 mm ⁇ 2 mm).
  • the substrate on which the electrode 551G was formed was washed with water, baked at 200° C. for 1 hour, and then subjected to UV ozone treatment for 370 seconds. After that, the substrate was introduced into a vacuum deposition apparatus whose inside was evacuated to about 10 ⁇ 4 Pa, and subjected to vacuum baking at 170° C. for 30 minutes in a heating chamber in the vacuum deposition apparatus. After that, the substrate was allowed to cool for about 30 minutes.
  • layer 112G was formed over layer 104G. Specifically, the materials were deposited using a resistance heating method.
  • layer 112G comprises PCBBiF and has a thickness of 65 nm.
  • layer 111G was formed over layer 112G. Specifically, the materials were co-evaporated using a resistance heating method.
  • 2mpPCBPDBq 2-[4′-(9-phenyl-9H-carbazol-3-yl)-3,1′-biphenyl-1-yl]dibenzo[f,h]quinoxaline
  • PCBBiF tris(4-t-butyl-6-phenylpyrimidinato)iridium(III)
  • layer 113G was formed over layer 111G. Specifically, the materials were deposited using a resistance heating method.
  • layer 113G comprises NBPhen and has a thickness of 20 nm.
  • layer 105G2 was formed over layer 113G. Specifically, the materials were deposited using a resistance heating method.
  • the layer 105G2 contains Li 2 O and has a thickness of 0.1 nm.
  • layer 106G1 was formed over layer 105G2. Specifically, the materials were deposited using a resistance heating method.
  • layer 106G1 comprises CuPc and has a thickness of 2 nm.
  • layer 106G2 was formed over layer 106G1. Specifically, the materials were co-evaporated using a resistance heating method.
  • layer 112G comprises PCBBiF and has a thickness of 40 nm.
  • layer 111G2 was formed over layer 112G. Specifically, the materials were co-evaporated using a resistance heating method.
  • layer 113G2-1 contains 2mp PCBPDBq and has a thickness of 10 nm.
  • layer 113G2-2 was formed on layer 113G2-1. Specifically, the materials were deposited using a resistance heating method.
  • layer 113G2-2 contains NBPhen and has a thickness of 20 nm.
  • layer 113G2 was formed on layer 113G2-2. Specifically, the materials were deposited using a resistance heating method.
  • layer 113G2 contains LiF and has a thickness of 1 nm.
  • layer 105G was formed over layer 113G2. Specifically, the materials were deposited using a resistance heating method.
  • layer 105G contains Yb and has a thickness of 0.8 nm.
  • electrode 552G was formed on layer 105G. Specifically, the materials were co-evaporated using a resistance heating method.
  • a layer CAPG was formed over electrode 552G. Specifically, the materials were deposited using a resistance heating method.
  • the layer CAPG comprises DBT3P-II and has a thickness of 70 nm.
  • ⁇ Method for producing light-emitting device 5>> A method comprising the following steps was used to fabricate the light-emitting device 5 described in this example.
  • steps 13-2, 13-3, and 13-4 and a 13-5th step which is different from the method for manufacturing the light-emitting device 4 .
  • the different parts are described in detail, and the above description is used for the parts using the same method.
  • the thirteenth step of the method for manufacturing the light-emitting device 4 in the method for manufacturing the light-emitting device 5 is referred to as step 13-1.
  • Step 13-1 In the thirteenth-1 step, the layer 113G2-2 was formed on the layer 113G2-1 in the same manner as in the thirteenth step in the method for manufacturing the light emitting device 4.
  • layer 113G2-2 contains NBPhen and has a thickness of 20 nm.
  • a sacrificial layer SCR1 was formed on the layer 113G2-2. Specifically, trimethylaluminum (abbreviation: TMA) was used as a precursor, water vapor was used as an oxidizing agent, and the material was deposited by the ALD method. Note that the sacrificial layer may be referred to as a mask layer in this specification and the like.
  • TMA trimethylaluminum
  • the sacrificial layer SCR1 contains aluminum oxide and has a thickness of 30 nm.
  • Step 13-3 In the thirteenth-3rd step, the sacrificial layer SCR2 was formed on the sacrificial layer SCR1. Specifically, the material was deposited using a sputtering method.
  • the sacrificial layer SCR2 contains indium gallium zinc oxide (abbreviation: IGZO) and has a thickness of 50 nm.
  • IGZO indium gallium zinc oxide
  • a slit was formed in the laminated film at a position not overlapping with the electrode 551G. Specifically, a slit having a width of 3 ⁇ m was formed at a position spaced outward by 3.5 ⁇ m from the end of the electrode 551G.
  • Step 13-5 In the thirteenth-fifth step, the sacrificial layer SCR1 and the sacrificial layer SCR2 were removed using a chemical solution.
  • layer 113G2 was formed on layer 113G2-2. Specifically, the materials were deposited using a resistance heating method. Note that the 14th to 17th steps are the same as the manufacturing method of the light emitting device 4 .
  • Table 4 shows main initial characteristics when the fabricated light-emitting device emits light with a luminance of about 1000 cd/m 2 .
  • Light-emitting device 4 was found to exhibit good properties.
  • the light-emitting device 5 exhibited good characteristics even though it was manufactured by adding steps 13-1 to 13-5 to the light-emitting device 4 manufacturing method.
  • the comparative light-emitting device 1 had significantly deteriorated characteristics compared to the light-emitting device 4 and the light-emitting device 5 .
  • Light-emitting device 4, light-emitting device 5, and comparative light-emitting device 1 are all exposed to a chemical solution or etching gas during the manufacturing process. Specifically, the surface in contact with the sacrificial layer SCR1 and the side surfaces formed by the slits are exposed to the chemical solution or etching gas. Further, the light-emitting device 4 and the light-emitting device 5 use materials with lower reactivity than the comparative light-emitting device 1 .
  • the light emitting device 4 and the light emitting device 5 use lithium oxide, and the comparative light emitting device 1 uses metal lithium. As a result, the reaction with the chemical solution or the etching gas was suppressed, and favorable characteristics of the light emitting device 4 and the light emitting device 5 were realized.
  • the manufactured comparative light-emitting device 1 described in this example has the same configuration as the light-emitting device 550G (see FIG. 31).
  • Table 6 shows the configuration of Comparative Light-Emitting Device 1.
  • Comparative Light Emitting Device 1 described in this example was fabricated using a method comprising the following steps.
  • a reflective film REFG was formed. Specifically, it was formed by a sputtering method using an alloy containing silver (Ag), palladium (Pd), and copper (Cu) (abbreviation: APC) as a target.
  • the reflective film REFG includes APC and has a thickness of 100 nm.
  • an electrode 551G was formed on the reflective film REFG. Specifically, it was formed by a sputtering method using indium oxide-tin oxide (abbreviation: ITSO) containing silicon or silicon oxide as a target.
  • ITSO indium oxide-tin oxide
  • the electrode 551G includes ITSO and has a thickness of 100 nm and an area of 4 mm 2 (2 mm ⁇ 2 mm).
  • the substrate on which the electrode 551G was formed was washed with water, baked at 200° C. for 1 hour, and then subjected to UV ozone treatment for 370 seconds. After that, the substrate was introduced into a vacuum deposition apparatus whose inside was evacuated to about 10 ⁇ 4 Pa, and subjected to vacuum baking at 170° C. for 30 minutes in a heating chamber in the vacuum deposition apparatus. After that, the substrate was allowed to cool for about 30 minutes.
  • layer 112G was formed over layer 104G. Specifically, the materials were deposited using a resistance heating method.
  • layer 112G comprises PCBBiF and has a thickness of 60 nm.
  • layer 111G was formed over layer 112G. Specifically, the materials were co-evaporated using a resistance heating method.
  • layer 113G-1 was formed over layer 111G. Specifically, the materials were deposited using a resistance heating method.
  • layer 113G-1 comprises 2mp PCBPDBq and has a thickness of 10 nm.
  • layer 113G-2 was formed over layer 113G-1. Specifically, the materials were deposited using a resistance heating method.
  • layer 113G-2 includes NBPhen and has a thickness of 20 nm.
  • layer 105G2 was formed over layer 113G-2. Specifically, the materials were deposited using a resistance heating method.
  • the layer 105G2 contains Li and has a thickness of 0.1 nm.
  • layer 106G1 was formed over layer 105G2. Specifically, the materials were deposited using a resistance heating method.
  • layer 106G1 comprises CuPc and has a thickness of 2 nm.
  • layer 112G was formed over layer 106G2. Specifically, the materials were deposited using a resistance heating method.
  • layer 112G comprises PCBBiF and has a thickness of 40 nm.
  • layer 113G2-1 was formed on layer 111G2. Specifically, the materials were deposited using a resistance heating method.
  • layer 113G2-1 contains 2mp PCBPDBq and has a thickness of 10 nm.
  • layer 113G2-2 was formed on layer 113G2-1. Specifically, the materials were deposited using a resistance heating method.
  • layer 113G2-2 contains NBPhen and has a thickness of 20 nm.
  • a sacrificial layer SCR1 was formed on layer 113G2-2. Specifically, trimethylaluminum (abbreviation: TMA) was used as a precursor, water vapor was used as an oxidizing agent, and the material was deposited by the ALD method.
  • TMA trimethylaluminum
  • the sacrificial layer SCR1 contains aluminum oxide and has a thickness of 30 nm.
  • a sacrificial layer SCR2 was formed on the sacrificial layer SCR1. Specifically, the material was deposited using a sputtering method.
  • the sacrificial layer SCR2 contains IGZO and has a thickness of 50 nm.
  • a slit was formed in the laminated film at a position not overlapping with the electrode 551G. Specifically, a slit having a width of 3 ⁇ m was formed at a position spaced outward by 3.5 ⁇ m from the end of the electrode 551G.
  • layer 105G was formed over layer 113G2-2. Specifically, the materials were deposited using a resistance heating method.
  • layer 105G contains LiF and has a thickness of 1 nm.
  • Electrode 552G was formed on layer 105G. Specifically, the materials were co-evaporated using a resistance heating method.
  • a layer CAPG was formed over electrode 552G. Specifically, the materials were deposited using a resistance heating method.
  • the layer CAPG comprises IGZO and has a thickness of 70 nm.
  • Comparative Light Emitting Device 1 When powered, Comparative Light Emitting Device 1 emitted light ELG and ELG2 (see FIG. 31). The operating characteristics of Comparative Light Emitting Device 1 were measured at room temperature (see FIGS. 32-36). A spectroradiometer (SR-UL1R manufactured by Topcon Corporation) was used to measure luminance, CIE chromaticity and emission spectrum.
  • Table 4 shows main initial characteristics when the fabricated light-emitting device emits light with a luminance of about 1000 cd/m 2 .
  • Example 2 materials that can be used for a light-emitting device of one embodiment of the present invention will be described with reference to FIGS.
  • FIG. 37 illustrates the structure of a sample for measuring physical properties of a material that can be used for the layer 105X2 of the light-emitting device of one embodiment of the present invention.
  • FIG. 38 is a diagram for explaining how a layer formed using Li 2 O changes in the air.
  • FIG. 39 is a diagram for explaining how a layer formed using Li changes in the air.
  • FIG. 40 is a diagram for explaining how a layer formed using Li 2 O changes in the air and how a layer formed using Li changes in the air.
  • the fabricated measurement sample described in this example has NBPhen, PCBBiF, and layer 105X2 (see FIG. 37). Layer 105X2 is sandwiched between NBPhen and PCBBiF.
  • a measurement sample for measuring physical properties of a material that can be used for the layer 105X2 was prepared using a method having the following steps.
  • a film comprising NBPhen and having a thickness of 30 nm was formed on the substrate 510 .
  • the materials were deposited using a resistance heating method.
  • a 0.5 mm quartz substrate was used as the base material 510 .
  • layer 105X2 was formed over NBPhen. Specifically, Li 2 O was vapor-deposited to a thickness of 0.1 nm using a resistance heating method.
  • a film comprising PCBBiF with a thickness of 30 nm was formed on layer 105X2. Specifically, the materials were deposited using a resistance heating method.
  • the measurement sample was taken out from the vacuum deposition apparatus into a nitrogen atmosphere without being exposed to the air, and was sealed using a sealing base material impermeable to atmospheric components.
  • the electron spin resonance spectrum was measured at room temperature by breaking the sealing of the measurement sample. Specifically, the measurement was performed immediately after the sealing was broken and after one day had passed in the atmosphere after the sealing was broken. Also, the spin strength was compared.
  • a signal was observed near a g value of 2 in the measurement sample prepared using Li 2 O (see FIG. 38). Accordingly, it can be said that the measurement sample has unpaired electrons. Also, a weak signal could be observed after one day in the atmosphere (see FIG. 40).
  • Comparative example 1 The comparative sample fabricated described in this example has NBPhen, PCBBiF, and layer 105X2 (see FIG. 37). Layer 105X2 is sandwiched between NBPhen and PCBBiF.
  • Comparative samples were prepared for measuring physical properties using a method having the following steps.
  • the method for preparing the measurement sample is the same as the above except that Li is used instead of Li 2 O.
  • layer 105X2 was formed over NBPhen. Specifically, Li was vapor-deposited to a thickness of 0.1 nm using a resistance heating method.
  • Example 2 In this example, a composite material that can be used for a light-emitting device of one embodiment of the present invention will be described with reference to FIGS.
  • FIG. 4 is a diagram for explaining how the intensity of an electron spin resonance spectrum in a composite material added to -dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF) changes depending on the amount added.
  • PCBBiF -dimethyl-9H-fluorene-2-amine
  • FIG. 4 is a diagram for explaining how the intensity of an electron spin resonance spectrum in a composite material changes depending on the amount added.
  • FIG. 4 is a diagram for explaining how the intensity of an electron spin resonance spectrum in a composite material changes depending on the amount added.
  • FIG. 44 is a diagram for explaining how the spin density in a composite material in which an organic compound with acceptor properties is added to an organic compound with hole-transport properties changes depending on the addition amount thereof.
  • the manufactured measurement sample described in this example contains an organic compound having an acceptor property and an organic compound having a hole-transport property.
  • a measurement sample was prepared by vapor-depositing the composite material on a quartz substrate using a resistance heating method. Specifically, an organic compound having a hole transport property and an organic compound OCHD-003 having an acceptor property were co-deposited.
  • PCBBiF as an organic compound having a hole-transporting property
  • BBABnf As an organic compound having a hole-transporting property, a measurement sample in which BBABnf:OCHD-003 is 1:0.05 (weight ratio) and a measurement in which BBABnf:OCHD-003 is 1:0.1 A sample was prepared. Note that the measurement sample has a thickness of 300 nm.
  • Electron spin resonance spectra were measured at room temperature. A signal was observed near a g value of 2 in all measurement samples, so it can be said that the samples have unpaired electrons. In addition, spin densities were calculated and compared.
  • FIG. 41 shows an electron spin resonance spectrum of a sample using PCBBiF as an organic compound having a hole-transport property.
  • FIG. 42 shows an electron spin resonance spectrum of a sample using BBABnf as an organic compound having a hole-transport property.
  • FIG. 43 shows an electron spin resonance spectrum of a sample using FLPAPA as an organic compound having a hole-transport property.
  • the spin density of the measurement sample using PCBBiF as the organic compound having hole transport property was It was the highest, and the spin density of the measurement sample using BBABnf was the lowest (see FIG. 44).
  • ANO conductive film, C21: capacitance, C22: capacitance, G1: conductive film, G2: conductive film, GD: drive circuit, GL: gate line, GL1: gate line, GL2: gate line, M21: transistor, N21: node , N22: node, S1g: conductive film, S2g: conductive film, SD: drive circuit, SW21: switch, SW22: switch, SW23: switch, V0: wiring, VCOM: conductive film, VCOM2: conductive film, 10: display device , 10A: display device, 20: layer, 30: layer, 40: drive circuit, 41: gate driver, 42: source driver, 50: functional circuit, 51: CPU, 52: accelerator, 53: CPU core, 60: display part, 61: pixel, 61D: pixel, 61N: pixel, 62: pixel circuit, 62B: pixel circuit, 62G: pixel circuit, 62R: pixel circuit, 70: light emitting element, 80: flip-

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
PCT/IB2022/051720 2021-03-12 2022-02-28 表示装置、電子機器 Ceased WO2022189884A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020237034110A KR20230156093A (ko) 2021-03-12 2022-02-28 표시 장치, 전자 기기
US18/280,861 US20240164132A1 (en) 2021-03-12 2022-02-28 Display Apparatus And Electronic Device
CN202280020650.5A CN117016045A (zh) 2021-03-12 2022-02-28 显示装置及电子设备
JP2023504873A JPWO2022189884A1 (https=) 2021-03-12 2022-02-28

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021039823 2021-03-12
JP2021-039823 2021-03-12

Publications (1)

Publication Number Publication Date
WO2022189884A1 true WO2022189884A1 (ja) 2022-09-15

Family

ID=83227464

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2022/051720 Ceased WO2022189884A1 (ja) 2021-03-12 2022-02-28 表示装置、電子機器

Country Status (6)

Country Link
US (1) US20240164132A1 (https=)
JP (1) JPWO2022189884A1 (https=)
KR (1) KR20230156093A (https=)
CN (1) CN117016045A (https=)
TW (1) TW202243301A (https=)
WO (1) WO2022189884A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012182125A (ja) * 2011-02-11 2012-09-20 Semiconductor Energy Lab Co Ltd 表示装置
JP2018524812A (ja) * 2015-06-23 2018-08-30 ノヴァレッド ゲーエムベーハー 極性マトリクスおよび金属ドーパント含んでいる、ｎ型ドープ半導体材料
JP2018534792A (ja) * 2015-11-10 2018-11-22 ノヴァレッド ゲーエムベーハー アルカリ金属及び第２金属を含む金属層
JP2018201012A (ja) * 2017-04-07 2018-12-20 株式会社半導体エネルギー研究所 発光素子、表示装置、電子機器、及び照明装置
US20190181202A1 (en) * 2017-12-11 2019-06-13 Lg Display Co., Ltd. Electroluminescent display device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080238297A1 (en) 2007-03-29 2008-10-02 Masuyuki Oota Organic el display and method of manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012182125A (ja) * 2011-02-11 2012-09-20 Semiconductor Energy Lab Co Ltd 表示装置
JP2018524812A (ja) * 2015-06-23 2018-08-30 ノヴァレッド ゲーエムベーハー 極性マトリクスおよび金属ドーパント含んでいる、ｎ型ドープ半導体材料
JP2018534792A (ja) * 2015-11-10 2018-11-22 ノヴァレッド ゲーエムベーハー アルカリ金属及び第２金属を含む金属層
JP2018201012A (ja) * 2017-04-07 2018-12-20 株式会社半導体エネルギー研究所 発光素子、表示装置、電子機器、及び照明装置
US20190181202A1 (en) * 2017-12-11 2019-06-13 Lg Display Co., Ltd. Electroluminescent display device

Also Published As

Publication number Publication date
US20240164132A1 (en) 2024-05-16
TW202243301A (zh) 2022-11-01
CN117016045A (zh) 2023-11-07
KR20230156093A (ko) 2023-11-13
JPWO2022189884A1 (https=) 2022-09-15

Similar Documents

Publication Publication Date Title
US12048178B2 (en) Light-emitting element, display module, lighting module, light-emitting device, display device, electronic appliance, and lighting device
US12439814B2 (en) Light-emitting element, light-emitting device, display device, electronic appliance, and lighting device
JP7854034B2 (ja) 発光装置
JP2022189942A (ja) 発光装置
US20230171985A1 (en) Organic semiconductor element, organic el element, and photodiode
US20240224739A1 (en) Display apparatus and electronic device
JP7840328B2 (ja) 表示装置、電子機器
KR20210098332A (ko) 발광 디바이스, 발광 장치, 전자 기기, 및 조명 장치
JP2024110948A (ja) 発光デバイス
JP2023103975A (ja) 発光デバイス、表示装置、電子機器、発光装置、照明装置
CN115148919A (zh) 发光器件用混合材料
US20240164132A1 (en) Display Apparatus And Electronic Device
US20240196663A1 (en) Display apparatus, display module, and electronic device
JP2026069485A (ja) 発光デバイス
JP2024065100A (ja) 発光デバイス、表示装置、および電子機器
JP2026015298A (ja) 発光デバイス
KR20230142580A (ko) 발광 장치 및 전자 기기
WO2024141864A1 (ja) 発光デバイス
JP2024007537A (ja) 発光デバイスの作製方法
JP2024092984A (ja) 表示装置の作製方法、表示装置、表示モジュール、電子機器
WO2022229780A1 (ja) 発光装置および電子機器

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22766455

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2023504873

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 18280861

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 202280020650.5

Country of ref document: CN

ENP Entry into the national phase

Ref document number: 20237034110

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 1020237034110

Country of ref document: KR

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 22766455

Country of ref document: EP

Kind code of ref document: A1