WO2022187023A1 - Temperature controlled rate of removal in cmp - Google Patents
Temperature controlled rate of removal in cmp Download PDFInfo
- Publication number
- WO2022187023A1 WO2022187023A1 PCT/US2022/017261 US2022017261W WO2022187023A1 WO 2022187023 A1 WO2022187023 A1 WO 2022187023A1 US 2022017261 W US2022017261 W US 2022017261W WO 2022187023 A1 WO2022187023 A1 WO 2022187023A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- temperature
- substrate
- removal rate
- polishing pad
- Prior art date
Links
- 238000005498 polishing Methods 0.000 claims abstract description 232
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 239000002002 slurry Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 38
- 230000007423 decrease Effects 0.000 claims abstract description 18
- 239000003082 abrasive agent Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000007517 polishing process Methods 0.000 claims description 38
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 27
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 27
- 230000007704 transition Effects 0.000 claims description 25
- 239000007788 liquid Substances 0.000 claims description 24
- 239000012530 fluid Substances 0.000 claims description 22
- 238000012544 monitoring process Methods 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 18
- 239000002826 coolant Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000011065 in-situ storage Methods 0.000 claims description 14
- 230000003247 decreasing effect Effects 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 2
- 238000004590 computer program Methods 0.000 claims 3
- 238000001816 cooling Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 239000007921 spray Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 229910000420 cerium oxide Inorganic materials 0.000 description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 238000005421 electrostatic potential Methods 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- -1 e.g. Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000003407 synthetizing effect Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Definitions
- This specification relates to chemical mechanical polishing applications using cerium oxide slurries.
- An integrated circuit is typically formed on a silicon wafer by sequential deposition of conductive, semi conductive or insulative layers.
- One fabrication step involves depositing a layer over a non-planar surface and planarizing the layer. For some applications, the layer is planarized until the top surface of the patterned underlying layer is exposed. For other applications, the layer is planarized until a predetermined thickness is left over the underlying layer.
- CMP Chemical mechanical polishing
- This planarization method mounts the substrate on a carrier head and the surface of the substrate is placed against the surface of a rotating polishing pad.
- a polishing liquid such as an abrasive slurry, is dispensed onto the rotating polishing pad, thereby polishing the layer on the substrate through mechanical and chemical means.
- the abrasive particles in the slurry can be silicon oxide and cerium oxide.
- a method of polishing includes dispensing a polishing slurry containing negatively charged ceria oxide onto a polishing pad, contacting a surface of a substrate to the polishing pad in the presence of the slurry, generating relative motion between the substrate and the polishing pad to polish the surface of the substrate, measuring at a removal rate for the substrate, determining that the measured removal rate is less than a target removal rate, and in response to determining that the measured removal rate is less than the target removal rate, decreasing a temperature of an interface between the polishing pad and the substrate.
- a method of polishing includes dispensing a polishing slurry containing negatively charged ceria oxide onto a polishing pad, contacting a surface of a substrate to the polishing pad in the presence of the slurry, generating relative motion between the substrate and the polishing pad to polish the surface of the substrate, measuring a removal rate for the substrate, determining that the measured removal rate is greater than a target removal rate, and in response to determining that the measured removal rate is greater than the target removal rate increasing a temperature of an interface between the polishing pad and the substrate.
- the abrasive agent may include cerium oxide particles.
- a method for removing material from a substrate includes dispensing a slurry that includes a carrier liquid and an abrasive agent on a surface of a polishing pad, storing an indication of a relative charge on the abrasive agent, contacting a surface of a substrate to the polishing pad in the presence of the slurry, generating relative motion between the substrate and the polishing pad to polish the surface of the substrate, measuring a removal rate for the substrate, comparing a the measured removal rate to a target removal rate and determining whether to increase or decrease the removal rate based on the comparison, determining whether to increase or decrease a temperature of an interface between the polishing pad and the substrate based on the indication of the relative charge of the abrasive agent and on whether to increase or decrease the removal rate, and controlling a temperature of the interface as determined to modify the removal rate.
- a method of polishing includes polishing a layer on a substrate by dispensing a polishing slurry onto a polishing pad, contacting a surface of the layer on the substrate to the polishing pad in the presence of the slurry, and generating relative motion between the substrate and the polishing pad, for an initial portion of polishing of the layer controlling temperature of the polishing to be within a first temperature range, obtaining a temperature transition time that is before an endpoint time, upon determining that the temperature transition time is reached, lowering the temperature of the polishing to be within a lower second temperature range that is lower than the first temperature range, and for a subsequent portion of polishing of the same layer controlling temperature of the polishing to be within the second temperature range until the estimated endpoint time.
- a method of polishing includes polishing a layer on a substrate by dispensing a polishing slurry onto a polishing pad, contacting a surface of the layer on a substrate to the polishing pad in the presence of the slurry, and generating relative motion between the substrate and the polishing pad, for an initial portion of polishing of the layer controlling temperature of the polishing to be within a first temperature range, determining a temperature transition time that is before an endpoint time, upon determining that the temperature transition time is reached increasing pressure on the substrate while increasing coolant flow to continue to maintain the temperature of the polishing to be within the first temperature range, and for a subsequent portion of polishing of the same layer maintaining the increased pressure and controlling temperature of the polishing to be within the first temperature range until the estimated endpoint time.
- Dispensing the coolant fluid may include spraying the coolant fluid through a convergent-divergent nozzle.
- Measuring the removal rate may include monitoring the substrate during polishing with an in-situ optical monitoring system.
- the surface of the substrate may include oxide layer, e.g., silicon oxide.
- Controlling the temperature of the interface may include increasing the polishing rate by increasing the temperature if the indication is positively charged, increasing the polishing rate by decreasing the temperature if the indication is negatively charged, decreasing the polishing rate by decreasing the temperature if the indication is positively charged, or decreasing the polishing rate by increasing the temperature if the indication is negatively charged,.
- a CMP system can achieve a high polishing rate to match customer production demands.
- the method described herein improves the throughput of a system further by reducing the time needed to polish each substrate. This leads to increased substrate output and lowered consumable materials cost per substrate. Optimization of the CMP process temperatures in conjunction with charged ceria applications also allows increased polishing pad lifespan, decreasing costs for customers.
- FIG. 1 is a schematic cross-sectional view of a chemical mechanical polishing system.
- FIG. 2 is a flow chart of a method of polishing.
- FIG. 3 is a flow chart of another implementation of a method of polishing.
- FIG. 4 is a flow chart of yet another implementation of a method of polishing.
- the material removal rate of a CMP process depends on selection of the abrasive and other components of the polishing fluid, pressure applied to the substrate, relative velocity between the polishing pad and substrate, and temperature at the interface between the substrate and polishing pad.
- chemically reactive processes e.g., a polishing process
- increase with temperature can be one technique to increase the removal rate.
- the actual dependency of polishing rate on temperature can be a more complex interaction between the effect of temperature on the polishing pad, e.g., the elastic modulus of the polishing pad, as well as reaction rates driven by temperature.
- the electrostatic potential of the abrasive particles is a component in this interaction.
- Cerium oxide e.g., ceria
- Cerium oxide is an abrasive material in the polishing liquid for some polishing processes.
- the surface of the abrasive ceria particles can have a positive electrostatic potential, a negative electrostatic potential, or a negligible electrostatic potential on the surface of the abrasive particles. This potential might depend on synthetizing techniques. Polishing processes that use polishing liquids with ceria particles exhibit a polishing rate that responds to temperature differently depending on the positive or negative potential at the surface of particles in the slurry.
- the CMP system includes a heater or a cooler to control the temperature at the interface of the substrate and polishing pad.
- the temperature of the polishing process By changing the temperature of the polishing process, the material removal rate increases or decreases depending on the surface charge of the ceria suspended in the slurry.
- cooling can increase the polishing rate and improve topography. Without being limited to any particular theory, cooling using negatively charged ceria can improves the material removal rate by increasing the hardness and modifying the asperity structure of the top surface of the pad.
- FIG. 1 illustrates an example of a polishing system 20.
- the polishing system 20 can include a rotatable disk-shaped platen 22 on which a polishing pad 30 is situated.
- the platen is operable to rotate about an axis 23.
- a motor 24 can turn a drive shaft 26 to rotate the platen 22.
- the polishing pad 30 can be detachably secured to the platen 22, for example, by a layer of adhesive.
- the polishing pad 30 can be a two-layer polishing pad with an outer polishing layer 32 and a softer backing layer 34.
- the polishing system 20 can include a polishing liquid supply port 40 to dispense a polishing liquid 42, such as an abrasive slurry, onto the polishing pad 30.
- the polishing system 20 can also include a polishing pad conditioner to abrade the polishing pad 30 to maintain the polishing pad 30 in a consistent abrasive state.
- a carrier head 50 is operable to hold a substrate 10 against the polishing pad 30.
- Each carrier head 50 also includes a plurality of independently controllable pressurizable chambers, e.g., three chambers 52a-52c, which can apply independently controllable pressurizes to associated zones on the substrate 10.
- the chambers 52a-52c can be defined by a flexible membrane 54 having a bottom surface to which the substrate 10 is mounted.
- the carrier head 50 can also include a retaining ring 56 to retain the substrate 10 below the flexible membrane 54.
- FIGS. 1 and 2 for ease of illustration, there could be two chambers, or four or more chambers, e.g., five chambers.
- other mechanisms to adjust the pressure applied to the substrate e.g., piezoelectric actuators, could be used in the carrier head 50.
- Each carrier head 50 is suspended from a support structure 60, e.g., a carousel or track, and is connected by a drive shaft 62 to a carrier head rotation motor 64 so that the carrier head can rotate about an axis 51.
- each carrier head 50 can oscillate laterally, e.g., on sliders on the carousel, by motion along or track; or by rotational oscillation of the carousel itself.
- the platen 22 is rotated about its central axis 23, and the carrier head 50 is rotated about its central axis 51 and translated laterally across the top surface of the polishing pad 30.
- the polishing system also includes an in-situ monitoring system 70, which can be used to control the polishing parameters, e.g., the applied pressure in one or more of the chambers 52a-52c.
- the in-situ monitoring system 70 can be an optical monitoring system, e.g, a spectrographic monitoring system, particularly for polishing of oxide layers on the substrate.
- the in-situ monitoring system 70 can be an eddy current monitoring system, particularly for polishing of metal layers on the substrate.
- the in-situ monitoring system 70 can include a light source 72, a light detector 74, and circuitry 76 for sending and receiving signals between a controller 90, e.g., a computer, and the light source 72 and light detector 74.
- a controller 90 e.g., a computer
- One or more optical fibers 78 can be used to transmit the light from the light source 72 to a window 36 in the polishing pad 30, and to transmit light reflected from the substrate 10 to the detector 74.
- the light source 72 can be operable to emit white light and the detector 74 can be a spectrometer. The measured spectrum can be converted into a characteristic value indicative of the thickness of the layer being polished in each of the zones.
- the output of the circuitry 76 can be a digital electronic signal that passes through a rotary coupler 28, e.g., a slip ring, in the drive shaft 26 to the controller 90.
- the circuitry 76 could communicate with the controller 90 by a wireless signal.
- the controller 90 can be a computing device that includes a microprocessor, memory and input/output circuitry, e.g., a programmable computer. Although illustrated with a single block, the controller 90 can be a networked system with functions distributed across multiple computers.
- the polishing system 20 includes a temperature sensor 80 to monitor a temperature of the polishing process, e.g., the temperature of the polishing pad 30 and/or polishing liquid 42 on the polishing pad, or of the substrate.
- the temperature sensor 80 could be an infrared (IR) sensor, e.g., an IR camera, positioned above the polishing pad 30 and configured to measure the temperature of the polishing pad 30 and/or polishing liquid 42 on the polishing pad.
- the temperature sensor 64 can be configured to measure the temperature at multiple points along the radius of the polishing pad 30 in order to generate a radial temperature profile.
- the IR camera can have a field of view that spans the radius of the polishing pad 30.
- the temperature sensor is a contact sensor rather than a non-contact sensor.
- the temperature sensor 64 can be thermocouple or IR thermometer positioned on or in the platen 24.
- the temperature sensor 64 can be in direct contact with the polishing pad.
- multiple temperature sensors could be spaced at different radial positions across the polishing pad 30 in order to provide the temperature at multiple points along the radius of the polishing pad 30. This technique could be use in the alternative or in addition to an IR camera.
- the temperature sensor 64 could be positioned inside the carrier head 50 to measure the temperature of the substrate 10. The temperature sensor 64 can be in direct contact (i.e., a contacting sensor) with the semiconductor wafer of the substrate 10.
- multiple temperature sensors are included in the polishing system 20, e.g., to measure temperatures of different components.
- the polishing system 20 also includes a temperature control system 100 to control the temperature of the polishing pad 30 and/or polishing liquid 42 on the polishing pad.
- the temperature control system 100 include a cooling system and/or a heating system. In some implementations both the cooling system and/or heating system operate by delivering a temperature-controlled medium, e.g., a liquid, vapor or spray, onto the polishing surface 36 of the polishing pad 30 (or onto a polishing liquid that is already present on the polishing pad).
- a temperature-controlled medium e.g., a liquid, vapor or spray
- an example temperature control system 100 includes an arm 110 that extends over the platen 22 and polishing pad 30. Multiple nozzles 120 are suspended from the arm 110, and each nozzle 120 is configured to spray a temperature control fluid onto the polishing pad.
- the arm 110 can be supported by a base 112 so that the nozzles 120 are separated from the polishing pad 30 by a gap 126.
- Each nozzle 120 can be configured to start and stop fluid flow through each nozzle 120, e.g., using the controller 12.
- Each nozzle 120 can be configured to direct aerosolized water in a spray 122 toward the polishing pad 30.
- the temperature control fluid is a coolant.
- the coolant be a gas, e.g., air, or a liquid, e.g., water.
- the coolant can be at room temperature or chilled below room temperature, e.g., at 5-15 °C.
- the cooling system uses a spray of air and liquid, e.g., an aerosolized spray of liquid, e.g., water.
- the cooling system can have nozzles that generate an aerosolized spray of water that is chilled below room temperature.
- solid material can be mixed with the gas and/or liquid.
- the solid material can be a chilled material, e.g., ice, or a material that absorbs heat, e.g., by chemical reaction, when dissolved in water.
- this coolant can be below room temperature, e.g., from -100 to 20°C, e.g., below 0°C.
- the temperature control fluid is a heated fluid.
- the heating fluid can be a gas, e.g., steam or heated air, or a liquid, e.g., heated water, or a combination of gas and liquid.
- the heating fluid is above room temperature, e.g., at 40-120 °C, e.g., at 90-110 °C.
- the fluid can be water, such as substantially pure de-ionized water, or water that includes additives or chemicals.
- the heating system uses a spray of steam.
- the steam can includes additives or chemicals.
- the temperature control system 100 can include a single arm to dispense either a coolant or a heating fluid, or two dedicated arms to dispense the coolant and the heating fluid, respectively.
- temperature control system 100 can control the temperature of the polishing process.
- heated or cooled fluid e.g., steam or cold water
- resistive heaters could be supported in the platen 22 to heat the polishing pad 30, and/or in the carrier head 50 to heat the substrate 10.
- Moderating the temperature of the slurry and polishing pad during polishing of a layer allows for increased interaction between charge-carrying abrasives such as cerium oxide.
- the material rate of removal can be beneficially increased by both modulating the physical parameters of the polishing pad as well as altering the chemical interaction characteristics between the charged ceria and filler layer.
- a temperature sensor measures the temperature of the polishing process, e.g., of the polishing pad or polishing liquid on the polishing pad or the substrate, and the controller 90 executes a closed loop control algorithm to control the temperature control system, e.g., the flow rate or temperature of the coolant or heating fluid relative, so as to maintain the polishing process at a desired temperature.
- the in-situ monitoring system measures the polishing rate for the substrate, and the controller 90 executes a closed loop control algorithm to control the temperature control system, e.g., the flow rate or temperature of the coolant or heating fluid relative, so as to maintain the polishing rate at a desired rate.
- a closed loop control algorithm to control the temperature control system, e.g., the flow rate or temperature of the coolant or heating fluid relative, so as to maintain the polishing rate at a desired rate.
- FIG. 2 illustrates a method to carry out this technique, which is applicable for charged ceria slurries.
- the controller 90 stores an indication of the whether the slurry being used contains negatively charged abrasive ceria particles or positively charged abrasive ceria particles (202). Polishing is performed, with the slurry with abrasive ceria particles dispensed onto the polishing pad (204).
- the controller 90 can store a desired temperature or temperature range, e.g., as part of a polishing recipe. So during polishing, the controller 90 can operate to maintain the temperature of the polishing process at the desired temperature or temperature range, e.g., using an open-loop or closed loop algorithm (206).
- the polishing process is monitored by an in-situ monitoring system, and the removal rate is calculated from the acquired data (208). Due to a variety of causes, the removal rate may depart from a desired polishing rate (210). For example, the controller 90 can detect whether the removal rate varies from a target polishing rate by more than a threshold amount. If this occurs, the controller 90 can cause the temperature control system to modify the process temperature so as to compensate and bring the removal rate back toward the desired polishing rate. However, what action should be taken can depend on the charge of the abrasive ceria particles.
- This data can be stored and accessed by the controller 90, e.g., as control logic or a lookup table, in order to determine how to adjust the temperature if the removal rate deviates from the desired polishing rate (212).
- the decision process on whether to increase or decrease the temperature could be embedded in a process recipe associated with a particular slurry that is loaded by the controller.
- the controller 90 then causes the temperature control system to adjust the temperature, e.g., by increasing or decreasing the temperature and/or flow rate of the temperature control fluid to modify the process temperature, e.g., the pad temperature (214).
- the maximum desirable temperature depends on the glass transition temperature for the polishing pad. If the pad becomes too hot, it can become too viscoelastic, and the polishing process may not proceed as expected, e.g., polishing rate may drop or defects may increase.
- the controller can be configured to keep the temperature below 2/3 of the melting point (compared to 0 C) of the polishing layer.
- polishing rate Separate from the issue of the impact of electrostatic charge on the dependence of polishing rate on temperature, for many polishing applications it is useful to reduce the polishing rate as the polishing process approaches the polishing endpoint in order to avoid overpolishing and reduce non-uniformity. On the other hand, keeping the polishing rate high during bulk polishing of thick layers is beneficial.
- One approach to reducing the polishing rate that has been proposed is to reduce the pressure on the substrate. However, this may not be practical in some applications, e.g., where the carrier head is already operating at a low applied pressure, such as for polishing of fragile layers.
- An approach that could be used instead of or in addition to reduction of the applied pressure near the polishing endpoint is to modify the process temperature to reduce the polishing rate. For example, for traditional silica slurries or for positively charged ceria slurries, the temperature can be reduced before the polishing endpoint to reduce the polishing rate.
- FIG. 3 illustrates a method to carry out this technique.
- the temperature of the polishing process is controller to be within a first temperature range (302).
- the initial portion can run from the beginning of the polishing process.
- Control can be performed by the controller 90 using a feedback loop that receives temperature measurements from the sensor 60 and adjusts operation of the temperature control system 100. It may be understood that the temperature of the polishing pad at a particular location, or of the slurry, or the substrate, can be a stand-in for the temperature of the polishing process.
- a temperature transition time is determined that is before an expected endpoint time (304).
- the temperature transition time can be a preset value based on a recipe; in this case the temperature transition time can determined by the user before polishing begins.
- the polishing process can be monitored by the in-situ monitoring system.
- the in-situ monitoring system can project an estimated endpoint time based on measured polishing rate of the substrate, and the transition time can be calculated based on the estimated endpoint time, e.g., a preset time, e.g., 10 seconds, or a percentage, e.g., 5-10% of the total polishing time, before the estimated endpoint time.
- the controller 90 causes the temperature control system to lower the temperature of the polishing to be within a lower second temperature range that is lower than the first temperature range (306).
- the lower second temperature range can be non-overlapping with the first temperature range, or can overlap no more than 25% of the first temperature range.
- the midpoint of the second temperature range can be 20-40°C lower than the midpoint of the first temperature range.
- the temperature of the polishing surface 36 can be lowered to at or below 30°C, e.g., at or below 20°C.
- the controller 90 causes the temperature control system 100 to maintain the temperature of the polishing process within the second temperature range (308).
- the subsequent portion of the polishing process can last until the estimated endpoint time for the layer.
- Another approach that could be used instead reduction of the applied pressure near the polishing endpoint is to increase the pressure on the substrate so as to reduce non uniformity, while also increasing temperature control flow so that the temperature control system maintains the desired temperature.
- the pressure on the substrate and/or the rotation rate of the platen can be increased, and the flow rate of the coolant can be increased before the polishing endpoint to achieve higher non-uniformity without sacrificing polishing rate.
- FIG. 4 illustrates a method to carry out this technique.
- the temperature of the polishing process is controlled to be within a first temperature range (402).
- a temperature transition time is determined that is before an expected endpoint time (404).
- the controller 90 adjust the pressure in one or more chambers in the carrier head 50 to increase pressure on the substrate (406).
- the controller 90 causes the temperature control system to increase the flow rate of the temperature control fluid, e.g., the coolant for silica slurries or for positively charged ceria slurries, so that the temperature is maintained within the first temperature range (408).
- the subsequent portion of the polishing process can last until the estimated endpoint time for the layer.
- the maximum desirable temperature depends on the glass transition temperature for the polishing pad. If the pad becomes too hot, it can become too viscoelastic, and the polishing process may not proceed as expected, e.g., polishing rate may drop or defects may increase.
- the controller can be configured to keep the temperature below 2/3 of the melting point (compared to 0 C) of the polishing layer.
- the temperature may be driven to a desired temperature at the beginning of the polishing process by the temperature control system.
- the temperature can then be maintained within a desired temperature range, e.g., at a temperature of about 50-66% of the melting point (compared to 0 C) of the polishing layer.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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KR1020237033340A KR20230152727A (en) | 2021-03-03 | 2022-02-22 | Temperature-controlled removal rate in CMP |
JP2023553434A JP2024509159A (en) | 2021-03-03 | 2022-02-22 | Temperature-controlled removal rate in CMP |
CN202280032056.8A CN117279741A (en) | 2021-03-03 | 2022-02-22 | Temperature controlled removal rate in CMP |
Applications Claiming Priority (2)
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US202163155924P | 2021-03-03 | 2021-03-03 | |
US63/155,924 | 2021-03-03 |
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WO2022187023A1 true WO2022187023A1 (en) | 2022-09-09 |
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PCT/US2022/017261 WO2022187023A1 (en) | 2021-03-03 | 2022-02-22 | Temperature controlled rate of removal in cmp |
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US (2) | US20220281070A1 (en) |
JP (1) | JP2024509159A (en) |
KR (1) | KR20230152727A (en) |
CN (1) | CN117279741A (en) |
WO (1) | WO2022187023A1 (en) |
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US20090170320A1 (en) * | 2007-12-31 | 2009-07-02 | Jens Heinrich | Cmp system and method using individually controlled temperature zones |
US20120190273A1 (en) * | 2011-01-20 | 2012-07-26 | Katsutoshi Ono | Polishing method and polishing apparatus |
US20190143476A1 (en) * | 2017-11-14 | 2019-05-16 | Applied Materials, Inc. | Temperature Control of Chemical Mechanical Polishing |
CN109822401A (en) * | 2019-03-29 | 2019-05-31 | 湖南科技大学 | Active control shear action and temperature-induced gradient thicken polishing method |
JP2020203375A (en) * | 2019-06-11 | 2020-12-24 | 株式会社荏原製作所 | Polishing method and polishing apparatus |
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- 2022-02-22 KR KR1020237033340A patent/KR20230152727A/en unknown
- 2022-02-22 US US17/677,891 patent/US20220281061A1/en active Pending
- 2022-02-22 WO PCT/US2022/017261 patent/WO2022187023A1/en active Application Filing
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US20220281061A1 (en) | 2022-09-08 |
TW202247945A (en) | 2022-12-16 |
US20220281070A1 (en) | 2022-09-08 |
CN117279741A (en) | 2023-12-22 |
KR20230152727A (en) | 2023-11-03 |
JP2024509159A (en) | 2024-02-29 |
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