WO2022174425A1 - 一种微发光元件、微发光阵列、转移方法及其显示器 - Google Patents

一种微发光元件、微发光阵列、转移方法及其显示器 Download PDF

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Publication number
WO2022174425A1
WO2022174425A1 PCT/CN2021/077100 CN2021077100W WO2022174425A1 WO 2022174425 A1 WO2022174425 A1 WO 2022174425A1 CN 2021077100 W CN2021077100 W CN 2021077100W WO 2022174425 A1 WO2022174425 A1 WO 2022174425A1
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Prior art keywords
micro
light
adhesive film
transfer adhesive
semiconductor layer
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PCT/CN2021/077100
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English (en)
French (fr)
Inventor
吴政
李佳恩
Original Assignee
厦门三安光电有限公司
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Application filed by 厦门三安光电有限公司 filed Critical 厦门三安光电有限公司
Priority to CN202180001708.7A priority Critical patent/CN115226413A/zh
Priority to PCT/CN2021/077100 priority patent/WO2022174425A1/zh
Publication of WO2022174425A1 publication Critical patent/WO2022174425A1/zh
Priority to US18/450,440 priority patent/US20230395749A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Definitions

  • the present invention relates to a structure for a light-emitting element, in particular to a micro-light-emitting diode structure.
  • the corresponding MicroLED structure is a weakened structure with bridge arms, which is difficult to control yield and high cost.
  • the present invention provides a micro-light-emitting element.
  • the micro-light-emitting element is defined to include a bottom surface, a top surface and a side surface.
  • the top surface has a step surface composed of a transfer adhesive film, and the distance between the transfer adhesive film and the edge of the top surface is 0.2 ⁇ m to 2 ⁇ m, Or 2 ⁇ m to 10 ⁇ m.
  • the top surface and the transfer adhesive film are rectangular, the top surface includes a first long side and a first short side, the transfer adhesive film includes a second long side and a second short side, and the length of the first long side and The lengths of the first short sides are compared to a first ratio, and the lengths of the second long sides and the second short sides are compared to a second ratio, wherein the first ratio is 0.9 to 1.1 times the second ratio.
  • the top surface of the micro light-emitting diode includes a regular or irregular roughened surface, and the regularity generally refers to the patterning of the process.
  • the transfer adhesive film is a continuous film or a discontinuous film.
  • the discontinuous film may be two or more separate patterns.
  • the interval between the transfer adhesive films is 1 ⁇ m to 5 ⁇ m.
  • the transfer adhesive film is a particle film, and the particle film with matching properties can be used as a light extraction structure under the condition of transparency.
  • the thickness of the transfer adhesive film is 0.1 ⁇ m to 2 ⁇ m, or not more than 0.1 ⁇ m, and the thickness here mainly refers to the distance from the highest point of the core particle to the distal surface of the transfer adhesive film, excluding the semiconductor layer
  • the thickness of the transfer adhesive film in the sequence pattern or the hole taking into account the transfer reliability and light transmittance, in some smaller core particle sizes, if the emphasis and reliability are preferred, the thickness of the transfer adhesive film is 0.1 ⁇ m to 2 ⁇ m, In some applications that pursue brightness, it is preferably not greater than 0.1 ⁇ m.
  • the transfer adhesive film transmits light with a wavelength of 400 nm to 750 nm, wherein the transmittance is not less than 90%;
  • the absorption wavelength is light with wavelengths below 360nm, of which the absorption rate is not less than 90%, and the transfer adhesive film absorbs ultraviolet laser and decomposes.
  • the material of the transfer adhesive film includes polyimide or acrylic adhesive.
  • the edge of the transfer adhesive film is inclined, wherein the inclined angle is 40° ⁇ 75°, which changes the path of the light.
  • the length of any side of the side of the transfer adhesive film in contact with the top surface is not less than 10 ⁇ m.
  • the surface of the transfer adhesive film away from the semiconductor layer sequence has grooves, such as a periodically distributed groove array.
  • the spacing is not more than 7 ⁇ m. If the spacing is too large, it is not conducive to the transfer of the core particles after laser decomposition of the transfer adhesive film, and it is easy to cause the rotation of the core particles. In some embodiments, it is not limited to periodic distribution, and more importantly, the concave spacing between slots.
  • the core particle transfer can be achieved through a small number of grooves on the transfer film by a laser with a large spot.
  • a single core particle has a single groove on the transfer film. groove.
  • the depth of the groove is 0.1 ⁇ m to 1 ⁇ m.
  • the grooves account for 50% to 80% of the surface area of the transfer film away from the semiconductor layer sequence, which is large enough to ensure sufficient separation of the transfer film from the temporary substrate.
  • the minimum side length of the micro light-emitting diode is 50 ⁇ m to 100 ⁇ m, or 50 ⁇ m or less.
  • the first electrical connection layer and/or the second electrical connection layer are located on the bottom surface.
  • the substrate is a circuit board, and the bottom surface of the micro-LED is fixed on the circuit board.
  • the thickness of the semiconductor layer sequence is 2.5 ⁇ m to 6 ⁇ m.
  • the thickness of the epitaxial layer is usually thinner than that of the conventional size core particles, which are more easily damaged by external force. Therefore, in the present invention, the matching design is product structure.
  • a micro-light-emitting array which includes a plurality of micro-light-emitting diodes.
  • the micro-light-emitting diodes include a bottom surface, a top surface and a side surface, and also includes a substrate disposed under the bottom surface and a transfer adhesive film covering the top surface.
  • the surface of the transfer adhesive film away from the semiconductor layer sequence has periodic grooves, and the distance from the transfer adhesive film to the edge of the top surface is 0.2 ⁇ m to 2 ⁇ m, or 2 ⁇ m to 10 ⁇ m.
  • the side of the transfer adhesive film close to the semiconductor layer sequence has a roughened surface.
  • the thickness of the transfer adhesive film is 0.1 ⁇ m to 2 ⁇ m, or not more than 0.1 ⁇ m, and the excessive thickness of the transfer adhesive film will lead to an increase in peeling stress. Therefore, the present invention proposes to reduce the thickness of the transfer adhesive film.
  • the thickness of the transfer adhesive film is 1.5 ⁇ m. In practical applications, if the thickness is too thin, the ability to absorb laser light during the transfer process will be weakened, which may easily cause laser damage to the epitaxial material.
  • the transfer adhesive film transmits light with a wavelength of 400 nm to 750 nm, and at least partially absorbs light with a wavelength below 360 nm.
  • the plurality of micro-LEDs have multiple wavelengths, for example, micro-LEDs with three colors of RGB (red, green, and blue) may be included.
  • RGB red, green, and blue
  • the edge of the transfer adhesive film is inclined, wherein the inclined angle is 40° ⁇ 75°.
  • the side length of the side of the transfer adhesive film in contact with the top surface is not less than 10 ⁇ m.
  • the surface of the transfer adhesive film away from the semiconductor layer sequence has periodic grooves, and the spacing of the grooves is not greater than 7 ⁇ m.
  • the material of the transfer adhesive film includes polyimide or acrylic adhesive.
  • the minimum side length of the micro light-emitting diode is 50 ⁇ m to 100 ⁇ m, or 50 ⁇ m or less.
  • the first electrical connection layer and/or the second electrical connection layer is located on the bottom surface.
  • the substrate is a circuit board, and the bottom surface of the micro-LED is fixed on the circuit board.
  • the thickness of the semiconductor layer sequence is 2.5 ⁇ m to 6 ⁇ m.
  • the invention discloses a wafer carrier method, such as a transferred and transported wafer, and discloses a micro-light-emitting array, comprising a plurality of micro-light-emitting diodes, and the micro-light-emitting diodes include:
  • the semiconductor layer sequence including a first semiconductor layer, a second semiconductor layer and an active layer located therebetween;
  • the element has a side surface, a bottom surface and a top surface arranged oppositely;
  • It also includes a substrate and a transfer adhesive film covering part of the top surface, the transfer adhesive film is located between the substrate and the top surface, the top surface includes a first area and a second area, the transfer adhesive film is located in the first area, and the second area surrounds first area.
  • the transmittance of the material of the substrate to light with a wavelength below 360 nm is not less than 95%, and the material of the substrate includes sapphire.
  • the distance from the transfer adhesive film to the edge of the top surface is 0.2 ⁇ m to 2 ⁇ m, or 2 ⁇ m to 10 ⁇ m.
  • the top surface and the transfer adhesive film are rectangular, the top surface includes a first long side and a first short side, the transfer adhesive film includes a second long side and a second short side, and the length of the first long side and The lengths of the first short sides are compared to a first ratio, and the lengths of the second long sides and the second short sides are compared to a second ratio, wherein the first ratio is 0.9 to 1.1 times the second ratio.
  • the transmittance of the transfer adhesive film to light with a wavelength of 400 nm to 750 nm is not less than 90%; and the absorption rate of the transfer adhesive film to light with a wavelength below 360 nm is not less than 90%, and the transfer adhesive film Absorbs UV laser decomposition.
  • the material of the transfer adhesive film includes polyimide or acrylic adhesive.
  • the thickness of the semiconductor layer sequence is 2.5 ⁇ m to 6 ⁇ m.
  • the present invention also provides a method for transferring a micro-luminescence array, which can manufacture the above-mentioned micro-luminescence element and micro-luminescence array. Specifically, the method includes the following steps:
  • Step (1) providing a growth substrate, and fabricating a semiconductor layer sequence on the growth substrate, where the semiconductor layer sequence includes a first semiconductor layer, a second semiconductor layer and an active layer located therebetween;
  • step (2) a separated semiconductor layer sequence structure is fabricated, the separated semiconductor layer sequence structure includes a first mesa and a second mesa, and a first electrical connection layer and a second electrical connection are fabricated on the first mesa and the second mesa respectively Floor;
  • Step (3) fixing the side of the semiconductor layer sequence away from the growth substrate on the first transfer substrate, and then removing the growth substrate;
  • a transfer adhesive film is formed on the surface of the semiconductor layer sequence away from the first transfer substrate, and part of the transfer adhesive film is removed.
  • the one side surface includes a first area and a second area, and the transfer adhesive film covers the first area.
  • the second area surrounds the first area, the transfer adhesive film does not exceed the edge of the surface, the distance from the transfer adhesive film to the edge is 0.2 ⁇ m to 2 ⁇ m, or 2 ⁇ m to 10 ⁇ m, and the thickness of the transfer adhesive film is not greater than 2 ⁇ m.
  • the adhesive film is fixed on the second transfer substrate, and then part of the transfer adhesive film is removed by laser, and the first transfer substrate is peeled off to expose the first electrical connection layer and/or the second electrical connection layer.
  • step (5) is further included, and the transfer adhesive film is completely removed.
  • the invention discloses a display, which is manufactured by the above-mentioned transfer method of the micro-luminescence array.
  • the invention discloses a display, which has a micro-light-emitting array and includes a plurality of micro-light-emitting diodes.
  • the micro-light-emitting diodes include a bottom surface, a top surface and a side surface, as well as a circuit board arranged under the bottom surface and a transfer adhesive film covering the top surface. , the distance from the transfer film to the edge of the top surface is 0.2 ⁇ m to 2 ⁇ m, or 2 ⁇ m to 10 ⁇ m.
  • the surface of the transfer adhesive film away from the semiconductor layer sequence has periodic grooves, and the spacing of the grooves is not greater than 7 ⁇ m.
  • the minimum side length of the micro light-emitting diode is 50 ⁇ m to 100 ⁇ m, or 50 ⁇ m or less.
  • the first electrical connection layer and/or the second electrical connection layer is located on the bottom surface.
  • the thickness of the semiconductor layer sequence is 2.5 ⁇ m to 6 ⁇ m.
  • the beneficial effects of the present invention include: providing a micro-LED core structure with high transfer yield, and other beneficial effects of the present invention will be described in conjunction with specific embodiments.
  • FIG. 1 is a schematic cross-sectional view of a micro-light-emitting array in the prior art
  • FIG. 2 and FIG. 3 are schematic cross-sectional views of growing epitaxial films in Example 1;
  • Example 4 is a schematic cross-sectional view of a chip structure fabricated in Example 1;
  • Example 14 is a schematic cross-sectional view of the third core particle transfer process in Example 1;
  • 15 and 16 are a schematic cross-sectional view and a schematic top view of the micro-light-emitting element in Example 2;
  • FIG. 17 , FIG. 18 and FIG. 19 are schematic cross-sectional views of the micro-light-emitting elements of some embodiments in Example 2;
  • Example 20 is a schematic cross-sectional view of the micro-light-emitting element in Example 3.
  • Example 21 is a schematic cross-sectional view of the micro-light-emitting element in Example 4.
  • Example 22 and 23 are schematic cross-sectional views of the micro-luminescence array in Example 5.
  • Example 24 is a schematic cross-sectional view of the micro-light-emitting element in Example 6;
  • FIG. 25 and 26 are schematic top and cross-sectional views of the display in Embodiment 7.
  • FIG. 25 and 26 are schematic top and cross-sectional views of the display in Embodiment 7.
  • 111 the first semiconductor layer; 111a, the first region; 111b, the second region; 111', the first mesa; 112, the second semiconductor layer; 112', the second mesa; 121, the first electrical connection layer; 122, second electrical connection layer; 210, transfer adhesive film; 220, adhesive layer; 310, wafer; 320, growth substrate; 330, first transfer substrate; 340, second transfer substrate; 350, carrier plate 360, circuit board; 361, first conductive layer; 362, second conductive layer; circle: laser focus position; T: thickness of transfer film; a 1 , a 2 , b 1 , b 2 : the length of the corresponding side ; ⁇ : Inclination angle.
  • a micro-light-emitting array in the prior art includes a plurality of micro-light-emitting diodes.
  • the micro-light-emitting diodes of the present invention mainly refer to light-emitting diodes with a minimum side length of 50 ⁇ m to 100 ⁇ m, or less than 50 ⁇ m.
  • a micro light-emitting diode comprising a semiconductor layer sequence, the semiconductor layer sequence comprising a first semiconductor layer 111, a second semiconductor layer 112 and an active layer 113 located therebetween, the first electrical connection layer 121 and the second electrical connection layer 122 respectively
  • the micro-LED has a side surface, a bottom surface and a top surface arranged opposite to each other, wherein the top surface is the light-emitting surface, the first electrical connection layer 121 and/or the second electrical connection layer.
  • 122 is a metal conductive layer, a non-metallic conductive layer, or a combination of the two.
  • the transfer adhesive film 210 is arranged on the top surface of the micro-LED (here, the top surface mainly refers to the light-emitting surface of the product), and the transfer adhesive film 210 is located on the wafer 310, which usually plays the role of fixing the core particles in the prior art.
  • the usual transfer adhesive film 210 is a continuous film layer, which is difficult to selectively transfer.
  • a laser-separated epitaxial material layer of a micro-LED is often used, for example, a laser-separated first semiconductor layer 111 is used for the first semiconductor layer 111 is a gallium nitride base as an example, the use of laser to decompose gallium nitride materials is easy to generate more gas in a short time, and the required laser energy is large. This problem is not obvious in the process of conventional size core particle transfer.
  • the black circle in the figure is the schematic laser decomposition point, and the epitaxy of the micron-sized core particle is usually 2.5 ⁇ m to 6 ⁇ m thick.
  • the gas extrusion of the core particle is prone to core particle offset and other problems. As a result, the core particles cannot be transferred well.
  • the energy is large, and there is no effective support under the transfer of the tiny core particles, which is easy to damage the epitaxial layer.
  • the present invention provides a method for transferring a micro-luminescence array.
  • a method for transferring a micro-luminescence array comprising the steps of:
  • a growth substrate 320 is provided.
  • the growth substrate 320 is a general-purpose material such as sapphire, gallium arsenide, or silicon.
  • a chemical vapor deposition method is used to fabricate a semiconductor layer sequence on the growth substrate 320.
  • the semiconductor layer sequence from the growth substrate 320 upwards sequentially includes: a first semiconductor layer 111, a second semiconductor layer 112 and a semiconductor layer located on two The active layer 113 between them.
  • a semiconductor layer sequence structure separated from each other is fabricated, an isolation trench extending through the growth substrate is provided between the individual semiconductor layer sequences, and the separated semiconductor layer sequence structure includes a first mesa 111 ′ and a second mesa 112 Specifically, the first mesa 111' may be a P-type surface, and the second mesa 112' may be an N-type surface, and the first electrical connection layer 121 and the first electrical connection layer 121 and the third The two electrical connection layers 122.
  • the first mesa 111' and the second mesa 112' are first fabricated, and then the channel isolation trenches between the semiconductor layer sequence structures are fabricated.
  • the order can be adjusted. order.
  • the side of the semiconductor layer sequence away from the growth substrate 320 is fixed on the first transfer substrate 330 , the first transfer substrate 330 has an adhesive layer 220 , and the adhesive layer 220 and the semiconductor layer are fixed on the first transfer substrate 330 . Sequence bonding, and then removing the growth substrate 320.
  • the fixing method is realized by the bonding of glue materials.
  • the glue material between the core particles is removed, that is, the individual independence between the glue materials is realized.
  • the exposed side of the semiconductor layer sequence after removing the growth substrate 320 may be roughened.
  • One side of the first semiconductor layer 111, and the roughening method includes wet etching or dry etching.
  • the transfer adhesive film 210 is formed on the surface of the semiconductor layer sequence away from the first transfer substrate 330.
  • the first semiconductor layer 111 is imprinted and fixed on the In the transfer adhesive film 210 of the second transfer substrate 340, the micro-LEDs are fixed on the second transfer substrate 340 through the transfer adhesive film 210, and then the first transfer substrate 330 is removed to realize the transfer of the micro-LEDs from the first transfer substrate 330 to the second transfer substrate 330.
  • Two transfer substrates 340, and the electrode surface of the micro-LED is turned upside down.
  • the material of the transfer adhesive film 210 includes polyimide or acrylic adhesive, and the laser in the ultraviolet band passes through the sapphire material.
  • the material of the transfer adhesive film 210 can be decomposed under low energy, and protect the epitaxial layer from laser damage.
  • the partial area transfer adhesive film 210 is removed.
  • the removal here can be performed by etching.
  • the etching method includes dry etching or wet etching. In this embodiment, dry directional etching is used.
  • the coverage of the transfer adhesive film 210 does not exceed the edge of the surface, the transfer adhesive film has a stepped surface, the transfer adhesive film is covered in the first area of the surface, and the transfer adhesive film is removed in the second peripheral area, and the transfer adhesive film 210
  • the distance to the edge is 0.2 ⁇ m to 2 ⁇ m, or 2 ⁇ m to 10 ⁇ m, that is, there is a groove body on the edge of the transfer adhesive film 210 on the top surface of the micro-light-emitting element, which realizes the separation between the individual transfer adhesive films 210 and also transfers the adhesive film.
  • the individual 210 is limited within the surface of the first semiconductor layer 111, and the thickness T of the transfer adhesive film 210 is not greater than 2 ⁇ m, preferably 1.5 ⁇ m in this embodiment. During the transfer process, even a very thin transfer adhesive is not easily removed due to vibration. After falling, one side of the transfer adhesive film 210 is completely bonded to the first semiconductor layer 111 to provide adhesion guarantee. After the removal process, the first electrical connection layer 121 and/or the second electrical connection layer 122 are exposed.
  • the chip structure in the figure constitutes a micro-light-emitting array and is fixed on the wafer for transportation and delivery for downstream users to continue to use laser pickup.
  • the top surface is the first semiconductor layer 111.
  • the top surface may further include other materials, such as a transparent insulating layer or an insulating reflective layer.
  • a micro-light-emitting array composed of a plurality of micro-light-emitting diodes is bonded to the circuit board.
  • step (5) is further included: laser decomposes the transfer adhesive film 210 to form a groove on the side of the transfer adhesive film 210 close to the second transfer substrate 340 , the circle in the figure is The area where the laser acts is located at the interface between the transfer adhesive film 210 and the second transfer substrate 340 , and the transfer adhesive film 210 and the micro-LEDs are separated from the second transfer substrate 340 .
  • the wavelength of the laser is preferably the ultraviolet band of non-visible light.
  • the transfer adhesive film 210 transmits light from a chip with a wavelength of 400 nm to 750 nm.
  • the transmission means that the transmittance is not less than 90%.
  • the material of the film 210 is, for example, the polyimide or acrylic adhesive proposed in the above steps, to avoid the reduction of the light extraction efficiency due to the light absorption of the transfer adhesive film during application, and at least partially absorb light with a wavelength below 360 nm.
  • the absorption here refers to The absorption rate is not less than 90%, and it can be fully decomposed by laser in the ultraviolet band to avoid laser damage to the semiconductor layer sequence.
  • the transfer adhesive film 210 fixed on a circuit board or other carrier is separated from the second transfer substrate 340 together with the micro-LEDs, the transfer adhesive film 210 on the surface of the micro-LEDs is completely removed.
  • the display core particles in the display are fabricated using the transfer method of this embodiment.
  • a micro-LED in order to improve the transfer efficiency or brightness of the micro-LED, a micro-LED is provided.
  • the minimum side length of the micro-LED is 50 ⁇ m to 100 ⁇ m, or less than 50 ⁇ m. Among them, it is preferably 50 ⁇ m or less.
  • a micro light emitting diode includes a semiconductor layer sequence, a first electrical connection layer 121 and a second electrical connection layer 122, the semiconductor layer sequence includes a first semiconductor layer 111, a second semiconductor layer 112 and a In the active layer 113 between them, the micro-LED has side surfaces, a bottom surface and a top surface arranged opposite to each other, and at least the top surface is a light-emitting surface.
  • the bottom surface of the micro-LED is fixed on the circuit board.
  • the transfer adhesive film 210 is disposed in the first area 111a on the top surface of the micro-LED, the top surface further includes a second area 111b, the first area 111a is located in the second area 111b, and the second area 111b is located on the top surface
  • the top surface of the micro-LED has a step formed by the transfer adhesive film 210, and there is a bulge formed by the transfer adhesive film 210.
  • the transfer adhesive film 210 does not exceed the edge of the top surface.
  • the edge not exceeding the top surface refers to It is the top view of the product in the vertical direction
  • the projection of the transfer adhesive film 210 is located in the top surface mainly composed of the first semiconductor layer 111, specifically, the distance D1 from the transfer adhesive film 210 to the edge of the top surface is 0.2 ⁇ m to 2 ⁇ m, or 2 ⁇ m to 10 ⁇ m, in this embodiment, preferably, D1 is 1 ⁇ m, and can also be 3 ⁇ m and 5 ⁇ m, to ensure that the transfer film 210 is connected to the top surface, and no debris occurs during the transfer process.
  • the distance of D1 is related to the shape of the chip.
  • D1 in the long-side direction, usually D1 is larger than the short-side direction.
  • the shape of the transfer adhesive film 210 is proportionally reduced depending on the length-width ratio during the dry etching process, which reduces the chip rotation offset caused by the different etching effects during the etching process and reduces the transfer yield.
  • the ratio of the length a 1 of the long side of the top surface and the length b 1 of the short side of the top surface is basically close to the ratio of the length a 2 of the long side and the length b 2 of the short side of the transfer film.
  • a 1 /b 1 (0.9 ⁇ 1.1)*a 2 /b 2 .
  • the thickness of the transfer adhesive film 210 is set to be no greater than 2 ⁇ m, preferably less than 0.5 ⁇ m. In some embodiments, the thickness of the transfer adhesive film 210 is no greater than 0.1 ⁇ m. ⁇ m to minimize the effect of light absorption by the adhesive.
  • the material of the transfer adhesive film 210 includes polyimide or acrylic adhesive.
  • the transfer adhesive film 210 in order to reduce the area of the transfer adhesive film 210 as much as possible and at the same time ensure the adhesion between the transfer adhesive film 210 and the micro-LEDs, for example, when the transfer adhesive film 210 occupies the surface area of the first semiconductor layer 111 80% or less, or it can be described as the contact area between the transfer adhesive film 210 and the surface of the first semiconductor layer 111 accounting for less than 80% of the overall projected area of the micro-LED, preferably when the first semiconductor layer 111 faces the transfer adhesive film 210.
  • the surface is made of irregular roughening structure or regular graphic roughening structure.
  • the side of the transfer adhesive film 210 away from the top surface has periodic grooves 211 .
  • the periodic grooves 211 are located on the surface of the transfer adhesive film 210 .
  • the spacing of the grooves 211 is not greater than 7 ⁇ m. If the spacing of the grooves 211 is too large, it is difficult to realize the transfer and separation of the core particles, and the rubber material is likely to be pulled and offset. Among them, the depth of the groove 211 is 0.1 ⁇ m to 1 ⁇ m. The depth of the groove 211 is too shallow, which is not conducive to peeling off. If the depth of the groove 211 is too large, the epitaxy of the chip is easily damaged due to excessive laser energy.
  • the groove 211 occupies the surface of the transfer adhesive film 210 away from the semiconductor layer sequence. 50% to 80% of the area.
  • the transfer adhesive film 210 is a patterned discontinuous film with intervals, for example, the interval is 1 ⁇ m to 5 ⁇ m, and some can also be made in the interval. Transfer structures or optical structures.
  • the transfer adhesive film 210 is a discretely distributed particle film.
  • the transfer adhesive film 210 can be partially removed by etching to form a discretely distributed adhesive material.
  • the refractive index of the adhesive material is preferably 1 to 2.5, with a certain
  • the first semiconductor layer 111 is patterned, the particles are located in the patterned holes in the semiconductor layer sequence, and the boundary of the adhesive material is the boundary between the first area 111a and the second area 112b.
  • a micro-light-emitting element suitable for application in mobile phone or watch display is provided. Since normal light intensity and privacy are emphasized in these application fields, side light emission is reduced, The difference between this embodiment and Embodiment 2 is that the edge of the transfer adhesive film 210 is inclined, wherein the inclination angle ⁇ is 40° ⁇ 80°, preferably 45° ⁇ 75°.
  • this embodiment provides a micro-light-emitting element, the transfer adhesive film covers the top surface of the micro-light-emitting element, and the transfer adhesive film
  • the area of the side contacting the semiconductor layer sequence is larger than the area of the side facing away from the semiconductor layer sequence.
  • a micro-light-emitting array including a plurality of micro-light-emitting diodes located on a bracket, and the plurality of micro-light-emitting diodes can be light of the same color, It can be light with different wavelengths or different colors.
  • a plurality of micro-LEDs are composed of red, green, and blue micro-LEDs.
  • the micro-LEDs include a bottom surface, a top surface and a side surface.
  • the core particles and the core particles are independent of the transfer adhesive film 210, the transfer adhesive film 210 is located on the top surface of the micro-LED, and the transfer adhesive film 210 does not exceed the edge of the top surface, the transfer adhesive film 210 to the top surface
  • the distance of the edges is 0.2 ⁇ m to 2 ⁇ m, or 2 ⁇ m to 10 ⁇ m.
  • the bracket includes an adhesive layer 230 and a carrier plate 350 .
  • the adhesive layer 230 may be an insulating adhesive film; the adhesive layer 230 may also be a bonding metal such as solder paste, and the carrier board 350 may be a circuit board for bonding connection.
  • the transfer adhesive film 210 can transmit light with a wavelength of 400 nm to 750 nm. In order to achieve laser peeling and absorption of laser light, the transfer adhesive film 210 at least partially absorbs light with a wavelength below 360 nm.
  • the material of the transfer adhesive film is preferably polyimide or Acrylic glue. Further, in order to solve the problem of stress and light absorption of the transfer adhesive film 210, the thickness of the transfer adhesive film 210 is set to be no greater than 2 ⁇ m, for example, 1.5 ⁇ m. It is possible to reduce the effect of light absorption by the transfer adhesive film 210 .
  • the transfer adhesive film 210 occupies less than 80% of the surface area of the first semiconductor layer 111, Or it can be described as when the contact area between the transfer adhesive film 210 and the surface of the first semiconductor layer 111 accounts for less than 80% of the overall projected area of the micro-LED, it is preferable to make an irregular rough surface on the surface of the first semiconductor layer 111 facing the transfer adhesive film 210 .
  • the side length of the side of the transfer adhesive film 210 in contact with the top surface is not less than 10 ⁇ m.
  • the side of the transfer adhesive film 210 away from the top surface has periodic grooves 211 .
  • the periodic grooves 211 are located on the surface of the transfer adhesive film 210 .
  • the spacing of the grooves 211 is not greater than 7 ⁇ m. If the spacing of the grooves 211 is too large, it is difficult to realize the transfer and separation of the core particles, and the rubber material is likely to be pulled and offset.
  • the difference from Embodiment 5 is that the edge of the transfer adhesive film 210 is inclined, wherein the inclined angle is 40° ⁇ 75°.
  • a display is provided with a micro-light-emitting array
  • the micro-light-emitting array includes a plurality of micro-light-emitting diodes
  • the micro-light-emitting diodes include a bottom surface, a top surface and a side surface
  • the bottom surface is the electrical connection surface
  • the top surface is the light emitting surface, including the first electrical connection layer 121, the second electrical connection layer 122 and the transfer adhesive film 210.
  • the transfer adhesive film 210 is located on the top surface of the micro-LED, and the transfer adhesive film 210 Not exceeding the edge of the top surface, the distance from the transfer film 210 to the edge of the top surface is 0.2 ⁇ m to 2 ⁇ m, or 2 ⁇ m to 10 ⁇ m. In order to improve the display effect, thinning design can be adopted, and the thickness of the transfer adhesive film 210 is not more than 0.5 ⁇ m , or in extreme cases, completely remove the transfer film 210 .
  • the side of the transfer adhesive film 210 away from the top surface has periodic grooves 211 , and the spacing between the grooves 211 of the micro-light-emitting array is not greater than 7 ⁇ m.
  • a circuit board 360 is disposed on the bottom surface of the micro-light-emitting array of the display.
  • the circuit board 360 includes: a first conductive layer 361 bonded and electrically connected to the first electrical connection layer 121 , a second conductive layer 361 bonded and electrically connected to the second electrical connection layer 122 .
  • the conductive layer 362 and the micro-light-emitting array are fixed on the circuit board 360 .

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Abstract

一种微发光元件、微发光阵列、转移方法及其显示器，微发光元件具有侧面、相对设置的底面和顶面，顶面为出光面；微发光元件包括设置在底面下的基板和覆盖在顶面上的转移胶薄膜，转移胶薄膜不超过顶面边缘，在激光去除转移胶薄膜或者转移过程中胶体粘附在顶面上，避免掉落到基板上，避免产生基板脏污。

Description

一种微发光元件、微发光阵列、转移方法及其显示器 技术领域
本发明涉及一种用于发光元件的结构，特别是涉及一种微发光二极管结构。
 背景技术
现在巨量转移主流采用的是Pick-Place图形选取的方案，对应的MicroLED的结构为具有桥臂的弱化结构，该结构在良率控制困难，成本高。
 技术解决方案
本发明为了解决背景技术提到的问题，降低良率控制难度，降低生产成本，提供了一种微发光元件，为了清楚描述产品结构，定义微发光元件包括底面、顶面和侧面，微发光元件包括：半导体层序列，第一电连接层和第二电连接层，具有侧面、相对设置的底面和顶面，至少顶面为出光面，这里的出光面即为微发光元件的主要出光面，不限制侧面和底面也可以有出光；还包括设置在底面下的基板和覆盖在顶面上的转移胶薄膜，顶面包括第一区域和第二区域，转移胶薄膜仅位于第一区域内，第一区域位于第二区域内，第二区域位于顶面的周边，从结构上描述，顶面具有由转移胶薄膜构成的台阶面，转移胶薄膜距离顶面边缘的距离为0.2μm至2μm，或者为2μm至10μm。
根据本发明，优选的，顶面和转移胶薄膜为矩形，顶面包括第一长边和第一短边，转移胶薄膜包括第二长边和第二短边，第一长边的长度和第一短边的长度相比为第一比值，第二长边的长度和第二短边的长度相比为第二比值，其中第一比值为第二比值的0.9至1.1倍。
根据本发明，优选的，微发光二极管的顶面包括规则或者不规则的粗化表面，规则通常指的是工艺的图形化。
根据本发明，优选的，转移胶薄膜为连续薄膜或者不连续薄膜，作为一种示例的不连续薄膜可以是两种以上的分离的图案。
根据本发明，优选的，转移胶薄膜为不连续薄膜时，转移胶薄膜之间的间隔为1μm至5μm。
根据本发明，优选的，转移胶薄膜为颗粒薄膜，具有匹配性的颗粒薄膜在透明的情况下，可作为光萃取结构。
根据本发明，优选的，转移胶薄膜的厚度为0.1μm至2μm，或者不大于0.1μm，这里的厚度主要是指是芯粒最高点至转移胶薄膜的远端面的距离，不包括半导体层序列图形或者孔洞中的转移胶薄膜厚度，兼顾转移可靠性和透光性，在一些较小的芯粒尺寸上，如果偏重与可靠性，则优选为转移胶薄膜的厚度为0.1μm至2μm，在一些追求亮度的应用中，则优选为不大于0.1μm。
根据本发明，优选的，为了匹配紫外激光分解转移胶薄膜，且保证对可见光的透光性，转移胶薄膜透过波长为400nm至750nm的光，其中透过率不小于90%；且至少部分吸收波长为360nm以下波长的光，其中吸收率不小于90%，转移胶薄膜吸收紫外激光分解。
根据本发明，优选的，转移胶薄膜的材料包括聚酰亚胺或者亚克力胶。
根据本发明，优选的，转移胶薄膜边缘为倾斜的，其中倾斜角度为40°~75°，改变出光的路径。
根据本发明，优选的，转移胶薄膜与顶面接触的一面的任意边长不小于10μm。
根据本发明，优选的，转移胶薄膜远离半导体层序列的表面具有凹槽，例如为周期性分布的凹槽阵列，周期性凹槽为步进式激光分解转移胶薄膜后的工艺结构，凹槽的间距不大于7μm，如果间距过大，不利于激光分解转移胶薄膜后转移芯粒，易产生芯粒旋转偏移，在一些实施例中，也不局限于周期性分布，更重要的是凹槽间的间距。
在本发明的一些实施例中，可通过大光斑的激光在转移胶薄膜上通过少数凹槽实现芯粒转移，在该些实施例中，例如在单颗芯粒的转移胶薄膜上具有单个凹槽。
根据本发明，优选的，凹槽的深度为0.1μm至1μm。
根据本发明，优选的，凹槽占转移胶薄膜远离半导体层序列的表面面积的50%至80%，足够大的占比，保证转移胶薄膜与临时基板的充分分离。
根据本发明，优选的，微发光二极管的最小边长为50μm至100μm，或者为50μm以下。
根据本发明，优选的，第一电连接层和/或第二电连接层位于底面，微发光元件例如为倒装芯粒或者垂直芯粒，在一些实施方式中，也可以是正装芯粒。
根据本发明，优选的，基板为电路板，微发光二极管的底面固定在电路板上。
根据本发明，优选的，半导体层序列厚度为2.5μm至6μm，在微发光元件转移的领域，外延层厚度通常薄与常规尺寸芯粒，更容易受到外力破坏，因此在本发明中匹配设计了产品结构。
在本发明中，还公开了一种微发光阵列，包括复数颗微发光二极管，微发光二极管包括底面、顶面和侧面，还包括设置在底面下的基板和覆盖在顶面上的转移胶薄膜，转移胶薄膜远离半导体层序列的表面具有周期性凹槽，转移胶薄膜至顶面边缘的距离为0.2μm至2μm，或者为2μm至10μm。
根据本发明，优选的，转移胶薄膜靠近半导体层序列一侧具有粗化表面。
根据本发明，优选的，转移胶薄膜的厚度为0.1μm至2μm，或者不大于0.1μm，转移胶薄膜厚度过大会导致剥离应力增大，结合微发光二极管的外延设计，容易导致芯粒破裂，因此本发明提出缩小转移胶薄膜厚度，作为优选的，转移胶薄膜的厚度为1.5μm，实际应用中，若厚度过薄则吸收转移过程中激光的能力减弱，容易造成激光损伤外延材料。
根据本发明，优选的，转移胶薄膜透过波长为400nm至750nm的光，至少部分吸收波长为360nm以下波长的光。
根据本发明，优选的，复数颗微发光二极管之间具有多种波长，例如可以包括RGB（红绿蓝）三色的微发光二极管。
根据本发明，优选的，转移胶薄膜边缘为倾斜的，其中倾斜角度为40°~75°。
根据本发明，优选的，转移胶薄膜与顶面接触的一面的边长不小于10μm。
根据本发明，优选的，转移胶薄膜远离半导体层序列的表面具有周期性凹槽，凹槽的间距不大于7μm。
根据本发明，优选的，转移胶薄膜的材料包括聚酰亚胺或者亚克力胶。
根据本发明，优选的，微发光二极管的最小边长为50μm至100μm，或者为50μm以下。
根据本发明，优选的，第一电连接层和/或第二电连接层位于底面。
根据本发明，优选的，基板为电路板，微发光二极管的底面固定在电路板上。
根据本发明，优选的，半导体层序列厚度为2.5μm至6μm。
本发明公开了一种载片方式，例如一种转移运输的晶片，公开了一种微发光阵列，包括复数颗微发光二极管，微发光二极管包括：
半导体层序列，半导体层序列包括第一半导体层、第二半导体层和位于两者之间的有源层；
第一电连接层，与第一半导体层电连接；
第二电连接层，与第二半导体层电连接；
元件具有侧面、相对设置的底面和顶面；
还包括基板和覆盖在部分顶面上的转移胶薄膜，转移胶薄膜位于基板和顶面之间，顶面包括第一区域和第二区域，转移胶薄膜位于第一区域内，第二区域包围第一区域。其中基板的材料对波长为360nm以下波长的光的透过率不小于95%，基板的材料包括蓝宝石。
根据本发明，优选的，转移胶薄膜至顶面边缘的距离为0.2μm至2μm，或者为2μm至10μm。
根据本发明，优选的，顶面和转移胶薄膜为矩形，顶面包括第一长边和第一短边，转移胶薄膜包括第二长边和第二短边，第一长边的长度和第一短边的长度相比为第一比值，第二长边的长度和第二短边的长度相比为第二比值，其中第一比值为第二比值的0.9至1.1倍。
根据本发明，优选的，转移胶薄膜对波长为400nm至750nm的光的透过率不小于90%；且转移胶薄膜对波长为360nm以下波长的光的吸收率不小于90%，转移胶薄膜吸收紫外激光分解。
根据本发明，优选的，转移胶薄膜的材料包括聚酰亚胺或者亚克力胶。
根据本发明，优选的，半导体层序列厚度为2.5μm至6μm。
本发明还提供了一种微发光阵列的转移方法，可制作出上述微发光元件和微发光阵列，具体来说，包括步骤：
步骤（1），提供生长衬底，在生长衬底上制作半导体层序列，半导体层序列包括第一半导体层、第二半导体层和位于两者之间的有源层；
步骤（2），制作出分离的半导体层序列结构，分离的半导体层序列结构包括第一台面和第二台面，分别在第一台面和第二台面上制作第一电连接层和第二电连接层；
步骤（3），将半导体层序列远离生长衬底的一侧固定在第一转移基板上，其后去除生长衬底；
步骤（4），将半导体层序列远离第一转移基板的一侧表面制作转移胶薄膜，去除部分转移胶薄膜，一侧表面包括第一区域和第二区域，转移胶薄膜覆盖在第一区域上，第二区域包围第一区域，转移胶薄膜不超过所述表面的边缘，转移胶薄膜至边缘的距离为0.2μm至2μm，或者为2μm至10μm，转移胶薄膜的厚度不大于2μm，通过转移胶薄膜固定在第二转移基板上，其后利用激光去除部分转移胶薄膜，剥离第一转移基板，露出第一电连接层和/或第二电连接层。
根据本发明，优选的，还包括步骤（5），全部去除转移胶薄膜。
本发明公开了一种显示器，采用上述微发光阵列的转移方法制作。
本发明公开了一种显示器，具有微发光阵列，包括复数颗微发光二极管，微发光二极管包括底面、顶面和侧面，还包括设置在底面下的电路板和覆盖在顶面上的转移胶薄膜，转移胶薄膜至顶面边缘的距离为0.2μm至2μm，或者为2μm至10μm。
根据本发明，优选的，转移胶薄膜远离半导体层序列的表面具有周期性凹槽，凹槽的间距不大于7μm。
根据本发明，优选的，微发光二极管的最小边长为50μm至100μm，或者为50μm以下。
根据本发明，优选的，第一电连接层和/或第二电连接层位于底面。
根据本发明，优选的，半导体层序列厚度为2.5μm至6μm。
 有益效果
本发明的有益效果包括：提供一种具有高转移良率的微发光二极管芯粒结构，本发明的其他有益效果将结合具体实施方式进行说明。
 附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例一起用于解释本发明，并不构成对本发明的限制。此外，附图数据是描述概要，不是按比例绘制。
图1为现有技术的微发光阵列剖面示意图；
图2和图3为实施例1中生长外延膜层的剖面示意图；
图4为实施例1中制作芯片结构的剖面示意图；
图5至图9为实施例1中第一次芯粒转移过程的剖面示意图；
图10至图13为实施例1中第二次芯粒转移过程的剖面示意图；
图14为实施例1中第三次芯粒转移过程的剖面示意图；
图15和图16为实施例2中的微发光元件的剖面示意图和俯视示意图；
图17、图18和图19为实施例2中一些实施方式的微发光元件的剖面示意图；
图20为实施例3中的微发光元件的剖面示意图；
图21为实施例4中的微发光元件的剖面示意图；
图22和图23为实施例5中的微发光阵列的剖面示意图；
图24为实施例6中的微发光元件的剖面示意图；
图25和图26为实施例7中显示器的俯视和剖面示意图。
图中标识：111、第一半导体层；111a、第一区域；111b、第二区域；111`、第一台面；112、第二半导体层；112`、第二台面；121、第一电连接层；122、第二电连接层；210、转移胶薄膜；220、粘结层；310、晶片；320、生长衬底；330、第一转移基板；340、第二转移基板；350、载板；360、电路板;361、第一导电层；362、第二导电层；圆圈：激光聚焦位置；T：转移胶薄膜的厚度；a 1、a 2、b 1、b 2：对应边的长度；α：倾斜角度。
本发明的实施方式
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其它优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。
需要说明的是，本实施例中所提供的图示仅以示意方式说明本发明的基本构想，虽图示中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、 形状及尺寸绘制， 其实际实施时各组件的型态、数量及比例可为一种改变， 且其组件布局型态也可能更为复杂。
参看图1，现有技术中的一种微发光阵列，包括复数颗微发光二极管，本发明的微发光二极管，主要指的是最小边长为50μm至100μm，或者为50μm以下的发光二极管。
微发光二极管，包括半导体层序列，半导体层序列包括第一半导体层111、第二半导体层112和位于两者之间的有源层113，第一电连接层121和第二电连接层122分别于第一半导体层111和第二半导体层112电连接，微发光二极管具有侧面、相对设置的底面和顶面，其中顶面为出光面，第一电连接层121和/或第二电连接层122为金属导电层、非金属导电层或者二者的结合。
设置转移胶薄膜210于微发光二极管顶面上（此处顶面主要说的是产品出光面），转移胶薄膜210位于晶片310上，在现有技术中通常起到固定芯粒的作用，由于通常的转移胶薄膜210为连续的膜层，难以选择性转移，选择性转移时，采用的往往是激光分离微发光二极管的外延材料层，例如激光分离第一半导体层111，以第一半导体层111为氮化镓基为例，利用激光分解氮化镓材料易在短时间内产生较多的气体，需要的激光器能量大，该问题在常规尺寸的芯粒转移过程中问题的困扰并不明显，图中黑色圆圈为示意的激光分解点，而在微米级尺寸的芯粒的外延通常厚度为2.5μm至6μm，转移过程中，一方面气体挤压芯粒容易产生芯粒偏移等问题，导致芯粒无法良好转移，一方面能量较大，微小芯粒的转移下方无有效支撑，容易损伤外延层。
在本发明的第一个实施例中，基于上述现有技术中存在的技术难题，本发明提供一种微发光阵列的转移方法。
一种微发光阵列的转移方法，包括步骤：
（1）参看图2和图3，提供生长衬底320，生长衬底320例如为蓝宝石、砷化镓或者硅等通用材料，根据衬底表面形貌划分，生长衬底320可以是平片或者为图形化衬底，在生长衬底320上采用化学气相沉积的方法制作半导体层序列，半导体层序列从生长衬底320往上依次包括：第一半导体层111、第二半导体层112和位于两者之间的有源层113。
（2）参看图4，制作出彼此分离的半导体层序列结构，个体半导体层序列之间设置贯穿至生长衬底的隔离槽，分离的半导体层序列结构包括第一台面111`和第二台面112`，具体来说第一台面111`可以是P型面，第二台面112`可以是N型面，分别在第一台面111`和第二台面112`上制作第一电连接层121和第二电连接层122，在本实施例中，采用先制作第一台面111`和第二台面112`，再制作半导体层序列结构之间的走道隔离槽，在某些实施方式中，可调整先后顺序。
（3）参看图5至图7，将半导体层序列远离生长衬底320的一侧固定在第一转移基板330上，第一转移基板330上具有粘结层220，粘结层220与半导体层序列粘结，其后去除生长衬底320，在本实施例的固定方式通过胶材的粘合来实现。
参看图8，去除生长衬底320后，移除芯粒与芯粒之间的胶材，即实现胶材之间的个体独立。
参看图9，在本实施例的一些实施方式中，以平片的生长衬底320为例，可以对半导体层序列去除生长衬底320后露出的一面进行粗化，在本实施例中，露出的一面为第一半导体层111，所述粗化的方式包括湿法蚀刻或者干法蚀刻。
（4）参看图10至图12，将半导体层序列远离第一转移基板330的一侧表面制作转移胶薄膜210，例如在本实施例中，通过将第一半导体层111压印进固定在第二转移基板340的转移胶薄膜210中，微发光二极管通过转移胶薄膜210固定在第二转移基板340上，其后去除第一转移基板330，实现微发光二极管从第一转移基板330转移到第二转移基板340，且将微发光二极管的电极面倒置朝上。转移胶薄膜210的材料包括聚酰亚胺或者亚克力胶，紫外波段的激光从蓝宝石材料透过，这些转移胶薄膜210的材料在低能量下既能实现分解，保护外延层不受激光损伤。
参看图13，去除部分区域转移胶薄膜210，这里的去除可以是采用蚀刻的方式进行，蚀刻方式包括干法蚀刻或者湿法蚀刻，本实施例采用干法的指向性蚀刻，在经过去除工艺后，转移胶薄膜210的覆盖面不超过所述表面的边缘，转移胶薄膜存在台阶面，在表面的第一区域内覆盖转移胶薄膜，而外围的第二区域移除转移胶薄膜，转移胶薄膜210至边缘的距离为0.2μm至2μm，或者为2μm至10μm，即在微发光元件顶面的转移胶薄膜210边缘具有槽体，实现了转移胶薄膜210个体之间的分离，也将转移胶薄膜210个体限制在第一半导体层111表面内，转移胶薄膜210的厚度T不大于2μm，在本实施例中优选为1.5μm，在转移过程中，即使是很薄的转移胶也不易因为震动掉落，转移胶薄膜210的一面完全与第一半导体层111接合，提供粘合力保证。经过去除工艺，露出第一电连接层121和/或第二电连接层122。该图中的芯片结构构成微发光阵列固定在晶圆上用于运输传递，供下游用户继续激光拾取使用。
在本实施例中，为了简化描述，顶面为第一半导体层111，在一些实施方式中，顶面还可能包括其他材料，例如透明绝缘层或者绝缘反射层。
在本实施例的一些实施方式中，将多颗微发光二极管组成的微发光阵列键合到电路板上。
参看图14，在本实施例的一些实施方式中，还包括步骤（5），激光分解转移胶薄膜210，在转移胶薄膜210靠近第二转移基板340的一侧形成凹槽，图中圆圈为激光作用的区域，该区域位于转移胶薄膜210和第二转移基板340交界的界面，转移胶薄膜210连同微发光二极管一起与第二转移基板340分离。
在本步骤中，激光的波长优选为非可见光的紫外波段，优选转移胶薄膜210透过波长为400nm至750nm的芯片激发出光，这里的透过指的是透过率不小于90%，转移胶薄膜210的材料例如是上述步骤中提出的聚酰亚胺或者亚克力胶，避免由于应用时转移胶薄膜吸光造成光萃取效率降低，而至少部分吸收波长为360nm以下波长的光，这里的吸收指的是吸收率不小于90%，在紫外波段可被激光充分分解，避免激光伤害到半导体层序列。
在一些实施方式中，固定在例如电路板或者其他载体上的转移胶薄膜210连同微发光二极管一起与第二转移基板340分离之后，其后再全部去除微发光二极管表面的转移胶薄膜210。
在一些实施方式中，利用本实施例的转移方法制作显示器中的显示芯粒。
在本发明的第二个实施例中，为了利于提升微发光二极管的转移效率或者亮度，提供了一种微发光二极管，微发光二极管的最小边长为50μm至100μm，或者50μm以下，本实施例中优选为50μm以下。
参看图15和图16，一种微发光二极管，包括半导体层序列，第一电连接层121和第二电连接层122，半导体层序列包括第一半导体层111、第二半导体层112和位于两者之间的有源层113，微发光二极管具有侧面、相对设置的底面和顶面，至少顶面为出光面，在一些实施方式中，微发光二极管的底面固定在电路板上。
从俯视上看，转移胶薄膜210设置在微发光二极管顶面的第一区域111a内，顶面还包括第二区域111b，第一区域111a位于第二区域111b内，第二区域111b位于顶面的边缘，微发光二极管顶面存在由转移胶薄膜210构成的台阶，存在转移胶薄膜210组成的凸起，转移胶薄膜210不超过顶面的边缘，需要说明的，不超过顶面的边缘指的是产品在竖直方向的俯视图中，转移胶薄膜210的投影位于主要有第一半导体层111构成的顶面内，具体来说，转移胶薄膜210至顶面边缘的距离D1为0.2μm至2μm，或者为2μm至10μm，在本实施例中优选的，D1为1μm，也可以为3μm和5μm，保证转移胶薄膜210与顶面连接，转移过程中无掉屑发生。
本发明的设计中，若当转移胶薄膜210超出顶面边缘时，做激光分解转移胶薄膜210的过程中，容易产生碎屑，造成污染和性能下降。
在本发明的实施中，发现D1的距离跟芯片的形状有关，例如在长边方向，通常D1会大于短边方向。也可以描述为转移胶薄膜210在干法蚀刻过程中形状依靠长宽比例进行等比例缩小，降低蚀刻过程中由于蚀刻作用的不同导致的芯片旋转偏移，降低转移良率。从图中来看，顶面长边的长度a 1和短边的长度b 1的比例基本与转移胶薄膜长边的长度a 2和短边的长度b 2的比例接近，优选的，a 1/b 1=（0.9~1.1）*a 2/b 2。
进一步的，为了解决转移胶膜层210的应力问题和吸光问题，设定转移胶薄膜210的厚度不大于2μm，优选为0.5μm以下，在一些实施方式中，转移胶薄膜210的厚度不大于0.1μm，尽可能降低胶材吸光的影响。转移胶薄膜210的材料包括聚酰亚胺或者亚克力胶。
在一些实施方式中，为了尽可能缩小转移胶薄膜210的面积大小，且同时保证转移胶薄膜210与微发光二极管之间的粘附力，例如当转移胶薄膜210占第一半导体层111表面面积的80%以下时，或者可以描述为转移胶薄膜210与第一半导体层111表面接触的面积占微发光二极管整体投影面积的80%以下时，优选在第一半导体层111朝向转移胶薄膜210的表面制作非规则的粗化结构或者规则的图形粗化结构。
在本实施例中，转移胶薄膜210远离顶面的一面具有周期性凹槽211，周期性凹槽211位于转移胶薄膜210表面，凹槽211产生于激光分解胶材，实现芯粒转移，凹槽211的间距不大于7μm，如果凹槽211的间距过大，难以实现芯粒转移分离，容易产生胶材拉扯偏移。其中，凹槽211的深度为0.1μm至1μm，凹槽211深度太浅不利于剥离，太深则对应激光能量过大容易损伤芯片外延, 凹槽211占转移胶薄膜210远离半导体层序列的表面面积的50%至80%。
参看图17，在一些实施方式中，为了膜层释放内应力，提升产品可靠性，转移胶薄膜210为具有间隔的图形化非连续薄膜，例如间隔为1μm至5μm，也可以在间隔中制作一些转移结构或者光学结构。
参看图18和图19，转移胶薄膜210为离散分布的颗粒薄膜，例如可以经过蚀刻部分去除转移胶薄膜210，形成为离散分布的胶材，胶材的折射系数优选为1~2.5，具有一定光萃取的作用，在一些实施例中，搭配图形化第一半导体层111，颗粒位于半导体层序列中图形孔洞中，胶材的边界为第一区域111a和第二区域112b的界线。
参看图20，在本发明的第三个实施例中，提供一种适合应用在手机或者手表显示的微发光元件，由于该些应用领域中强调法线光强度和私秘性，减少侧面出光，本实施例与实施例2的区别在于，转移胶薄膜210边缘为倾斜的，其中倾斜角度α为40°~80°，优选为45°~75°。
参看图21，在本发明的第四个实施例中，作为一种可选的方案，本实施例提供了一种微发光元件，转移胶薄膜覆盖在微发光元件的顶面，且转移胶薄膜接触半导体层序列的一面面积大于远离半导体层序列的一面面积。利用梯形的转移胶薄膜减少掉屑发生的可能性。
参看图22和图23，在本发明的第五个实施例中，提供了一种微发光阵列，包括位于支架上的复数颗微发光二极管，复数颗微发光二极管可以是同种颜色的光，可以是具有不同波长的光或者不同颜色的光，例如复数颗微发光二极管由红、绿、蓝微发光二极管组成，微发光二极管包括底面、顶面和侧面，其中底面为电连接面，顶面为出光面，芯粒和芯粒之间彼此独立的转移胶薄膜210，转移胶薄膜210位于微发光二极管顶面上，且转移胶薄膜210不超过顶面的边缘，转移胶薄膜210至顶面边缘的距离为0.2μm至2μm，或者为2μm至10μm。当转移胶薄膜210超出顶面边缘时，做激光分解转移胶薄膜210的过程中，容易产生碎屑，碎屑易掉落到支架上，造成污染和性能下降。支架包括粘附层230和载板350。粘附层230可以是绝缘的胶膜；粘附层230也可以是锡膏等键合金属，载板350可以是用于键合连接的电路板。
转移胶薄膜210能透过波长为400nm至750nm的光，为了实现激光剥离，吸收激光,转移胶薄膜210至少部分吸收波长为360nm以下波长的光，转移胶薄膜的材料优选为聚酰亚胺或者亚克力胶。进一步，为了解决转移胶膜210的应力问题和吸光问题，设定转移胶薄膜210的厚度不大于2μm，例如为1.5μm，在一些实施方式中，转移胶薄膜210的厚度不大于0.1μm，尽可能降低转移胶薄膜210吸光的影响。
为了尽可能缩小转移胶薄膜210的面积大小，且同时保证转移胶薄膜210与微发光二极管之间的粘附力，例如当转移胶薄膜210占第一半导体层111表面面积的80%以下时，或者可以描述为转移胶薄膜210与第一半导体层111表面接触的面积占微发光二极管整体投影面积的80%以下时，优选在第一半导体层111朝向转移胶薄膜210的表面制作非规则的粗化结构或者规则的图形粗化结构，为了提供稳定的粘合力，转移胶薄膜210与顶面接触的一面的边长不小于10μm。
在本实施例中，转移胶薄膜210远离顶面的一面具有周期性凹槽211，周期性凹槽211位于转移胶薄膜210表面，凹槽211产生于激光分解胶材，实现芯粒转移，凹槽211的间距不大于7μm，如果凹槽211的间距过大，难以实现芯粒转移分离，容易产生胶材拉扯偏移。
参看图24，在本发明的第六个实施例中，与实施例5的区别在于转移胶薄膜210边缘为倾斜的，其中倾斜角度为40°~75°。
参看图25和图26，在本发明的第七个实施例中，提供了一种显示器，具有微发光阵列，微发光阵列包括复数颗微发光二极管，微发光二极管包括底面、顶面和侧面，其中底面为电连接面，顶面为出光面，包括第一电连接层121、第二电连接层122和转移胶薄膜210，转移胶薄膜210位于微发光二极管顶面上，且转移胶薄膜210不超过顶面的边缘，转移胶薄膜210至顶面边缘的距离为0.2μm至2μm，或者为2μm至10μm，为了改善显示效果，可以通过减薄设计，转移胶薄膜210的厚度不大于0.5μm，或者极限的情况下，全部移除转移胶薄膜210。转移胶薄膜210远离顶面的一面具有周期性凹槽211，微发光阵列的凹槽211间距不大于7μm。
在显示器的微发光阵列底面设置有电路板360，电路板360包括：与第一电连接层121键合电连接的第一导电层361、与第二电连接层122键合电连接的第二导电层362，微发光阵列固定在电路板360上。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和替换，这些改进和替换也应视为本发明的保护范围。

Claims (37)

  1. 一种微发光元件，包括：
    半导体层序列，半导体层序列包括第一半导体层、第二半导体层和位于两者之间的有源层；
    第一电连接层，与第一半导体层电连接；
    第二电连接层，与第二半导体层电连接；
    元件具有侧面、相对设置的底面和顶面；
    其特征在于，还包括设置在底面下的基板和覆盖在部分顶面上的转移胶薄膜，顶面包括第一区域和第二区域，转移胶薄膜位于第一区域内，第二区域包围第一区域。
  2. 根据权利要求1所述的一种微发光元件，其特征在于，转移胶薄膜至顶面边缘的距离为0.2μm至2μm，或者为2μm至10μm。
  3. 根据权利要求1所述的一种微发光元件，其特征在于，顶面和转移胶薄膜为矩形，顶面包括第一长边和第一短边，转移胶薄膜包括第二长边和第二短边，第一长边的长度和第一短边的长度相比为第一比值，第二长边的长度和第二短边的长度相比为第二比值，其中第一比值为第二比值的0.9至1.1倍。
  4. 根据权利要求1所述的一种微发光元件，其特征在于，微发光二极管的顶面包括规则或者不规则的粗化表面。
  5. 根据权利要求1所述的一种微发光元件，其特征在于，转移胶薄膜为连续薄膜或者不连续薄膜。
  6. 根据权利要求5所述的一种微发光元件，其特征在于，转移胶薄膜为不连续薄膜，转移胶薄膜之间的间隔为1μm至5μm。
  7. 根据权利要求1所述的一种微发光元件，其特征在于，转移胶薄膜为颗粒薄膜。
  8. 根据权利要求1所述的一种微发光元件，其特征在于，转移胶薄膜的厚度为0.1μm至2μm，或者不大于0.1μm。
  9. 根据权利要求1所述的一种微发光元件，其特征在于，转移胶薄膜对波长为400nm至750nm的光的透过率不小于90%；且转移胶薄膜对波长为360nm以下波长的光的吸收率不小于90%，转移胶薄膜吸收紫外激光分解。
  10. 根据权利要求1所述的一种微发光元件，其特征在于，转移胶薄膜的材料包括聚酰亚胺或者亚克力胶。
  11. 根据权利要求1所述的一种微发光元件，其特征在于，转移胶薄膜边缘为倾斜的，其中倾斜角度为40°~75°。
  12. 根据权利要求1所述的一种微发光元件，其特征在于，转移胶薄膜与顶面接触的一面的任意边长不小于10μm。
  13. 根据权利要求1所述的一种微发光元件，其特征在于，转移胶薄膜远离半导体层序列的表面具有凹槽，凹槽的间距不大于7μm。
  14. 根据权利要求13所述的一种微发光元件，其特征在于，凹槽在转移胶薄膜远离半导体层序列的表面为周期性分布。
  15. 根据权利要求13所述的一种微发光元件，其特征在于，凹槽的深度为0.1μm至1μm。
  16. 根据权利要求13所述的一种微发光元件，其特征在于，凹槽占转移胶薄膜远离半导体层序列的表面面积的50%至80%。
  17. 根据权利要求1所述的一种微发光元件，其特征在于，微发光二极管的最小边长为50μm至100μm，或者为50μm以下。
  18. 根据权利要求1所述的一种微发光元件，其特征在于，第一电连接层和/或第二电连接层位于底面。
  19. 根据权利要求1或18所述的一种微发光元件，其特征在于，基板为电路板，微发光二极管的底面固定在电路板上。
  20. 根据权利要求1所述的一种微发光元件，其特征在于，半导体层序列厚度为2.5μm至6μm。
  21. 根据权利要求1所述的一种微发光元件，其特征在于，至少顶面为出光面。
  22. 一种微发光阵列，包括复数颗微发光二极管，微发光二极管包括：
    半导体层序列，半导体层序列包括第一半导体层、第二半导体层和位于两者之间的有源层，
    第一电连接层，与第一半导体层电连接，
    第二电连接层，与第二半导体层电连接，
    微发光二极管具有侧面、相对设置的底面和顶面，
    其特征在于，还包括设置在底面下的基板和覆盖在部分顶面上的转移胶薄膜，顶面包括第一区域和第二区域，转移胶薄膜位于第一区域内，第二区域包围第一区域。
  23. 根据权利要求22所述的一种微发光阵列，其特征在于，复数颗微发光二极管之间具有多种波长。
  24. 根据权利要求22所述的一种微发光阵列，其特征在于，第一电连接层和/或第二电连接层位于底面。
  25. 根据权利要求22或者24所述的一种微发光阵列，其特征在于，基板为电路板，微发光二极管的底面固定在电路板上。
  26. 一种微发光阵列，包括复数颗微发光二极管，微发光二极管包括：
    半导体层序列，半导体层序列包括第一半导体层、第二半导体层和位于两者之间的有源层；
    第一电连接层，与第一半导体层电连接；
    第二电连接层，与第二半导体层电连接；
    元件具有侧面、相对设置的底面和顶面；
    其特征在于，还包括基板和覆盖在部分顶面上的转移胶薄膜，转移胶薄膜位于基板和顶面之间，顶面包括第一区域和第二区域，转移胶薄膜位于第一区域内，第二区域包围第一区域。
  27. 根据权利要求26所述的一种微发光阵列，其特征在于，转移胶薄膜至顶面边缘的距离为0.2μm至2μm，或者为2μm至10μm。
  28. 根据权利要求26所述的一种微发光阵列，其特征在于，顶面和转移胶薄膜为矩形，顶面包括第一长边和第一短边，转移胶薄膜包括第二长边和第二短边，第一长边的长度和第一短边的长度相比为第一比值，第二长边的长度和第二短边的长度相比为第二比值，其中第一比值为第二比值的0.9至1.1倍。
  29. 根据权利要求26所述的一种微发光阵列，其特征在于，转移胶薄膜对波长为400nm至750nm的光的透过率不小于90%；且转移胶薄膜对波长为360nm以下波长的光的吸收率不小于90%，转移胶薄膜吸收紫外激光分解。
  30. 根据权利要求26所述的一种微发光阵列，其特征在于，转移胶薄膜的材料包括聚酰亚胺或者亚克力胶。
  31. 根据权利要求26所述的一种微发光阵列，其特征在于，半导体层序列厚度为2.5μm至6μm。
  32. 根据权利要求26所述的一种微发光阵列，其特征在于，基板的材料对波长为360nm以下波长的光的透过率不小于95%。
  33. 根据权利要求26所述的一种微发光阵列，其特征在于，基板的材料为蓝宝石。
  34. 一种微发光阵列的转移方法，包括步骤：
    （1）提供生长衬底，在生长衬底上制作半导体层序列，半导体层序列包括第一半导体层、第二半导体层和位于两者之间的有源层；
    （2）制作出分离的半导体层序列，分离的半导体层序列包括第一台面和第二台面，分别在第一台面和第二台面上制作第一电连接层和第二电连接层；
    （3）将半导体层序列远离生长衬底的一侧固定在第一转移基板上，其后去除生长衬底；
    （4）将半导体层序列远离第一转移基板的顶面制作转移胶薄膜，顶面包括第一区域和第二区域，第二区域包围第一区域，蚀刻去除第二区域的转移胶薄膜，转移胶薄膜至顶面边缘的距离为0.2μm至2μm，或者为2μm至10μm，转移胶薄膜的厚度不大于2μm，通过转移胶薄膜固定在第二转移基板上，其后利用激光去除部分转移胶薄膜，剥离第一转移基板，露出第一电连接层和/或第二电连接层。
  35. 根据权利要求34所述的微发光阵列的转移方法，其特征在于，还包括步骤（5），全部去除转移胶薄膜。
  36. 一种显示器，其特征在于，采用权利要求34或35所述的微发光阵列的转移方法。
  37. 一种显示器，具有微发光阵列，包括复数颗微发光二极管，微发光二极管包括侧面、相对设置的底面和顶面，其特征在于，还包括设置在底面下的电路板和覆盖在部分顶面上的转移胶薄膜，顶面包括第一区域和第二区域，转移胶薄膜位于第一区域内，第二区域包围第一区域。
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