WO2022163895A1 - 매엽식 웨이퍼 세정장치 및 이를 이용한 웨이퍼 표면 거칠기 제어방법 - Google Patents
매엽식 웨이퍼 세정장치 및 이를 이용한 웨이퍼 표면 거칠기 제어방법 Download PDFInfo
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- WO2022163895A1 WO2022163895A1 PCT/KR2021/001966 KR2021001966W WO2022163895A1 WO 2022163895 A1 WO2022163895 A1 WO 2022163895A1 KR 2021001966 W KR2021001966 W KR 2021001966W WO 2022163895 A1 WO2022163895 A1 WO 2022163895A1
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- wafer
- chemical
- cleaning
- supplying
- rotating
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- 238000004140 cleaning Methods 0.000 title claims abstract description 117
- 238000000034 method Methods 0.000 title claims abstract description 87
- 230000003746 surface roughness Effects 0.000 title claims abstract description 47
- 239000000126 substance Substances 0.000 claims abstract description 174
- 239000000463 material Substances 0.000 claims description 61
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 38
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical group [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 26
- 235000012431 wafers Nutrition 0.000 description 152
- 239000012535 impurity Substances 0.000 description 13
- 239000002245 particle Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000007921 spray Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- -1 that is Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Definitions
- the present invention relates to a wafer cleaning apparatus, and more particularly, to a single-wafered wafer cleaning apparatus and a single-wafered wafer surface roughness control method capable of differentiating the roughness of the front surface and the rear surface of the wafer.
- Impurities such as slurry or particles are attached to the surface of the semiconductor wafer in which the manufacturing process is in progress.
- the cleaning process is similar to the etching process in that it removes the material on the semiconductor wafer surface, but it is different in that the object to be removed is an impurity.
- the wet process can be further divided into a batch method and a spray method.
- FIG. 1 illustrates an example of a cleaning process of a conventional batch method.
- impurities on both sides of the wafer are removed by first precipitating a plurality of wafers in a left-side sedimentation tank containing chemicals, and impurities on both sides of the wafer are removed using chemicals. performs the cleaning process by further removing impurities and chemicals remaining on the wafer surface by precipitating it in the right sedimentation tank.
- the spray method is a method of removing impurities by spraying liquid or gaseous chemicals on the rotating wafer.
- the batch method is advantageous in cleaning a large number of wafers at once, and the spray method is advantageous in cleaning wafers one by one.
- the mass immersion method used a batch method, but the proportion of the spray method (Single Wafer Type, hereinafter referred to as single-wafer type) is increasing due to the advancement of microprocessing and changes in the materials used.
- 3 illustrates an example of a wafer having different roughness on both sides.
- the technical problem to be solved by the present invention is to perform different cleaning processes on both sides of the wafer during the cleaning process of the wafer, and by making different chemicals used depending on the surface of the wafer to be cleaned, the roughness of both surfaces can be different It is to provide a single-wafer type wafer cleaning apparatus that can do this.
- Another technical problem to be solved by the present invention is to perform different cleaning processes on both sides of the wafer in the cleaning process of the wafer, and by making different chemicals to be used depending on the surface of the wafer to be cleaned, the roughness of both surfaces is reduced. It is to provide a single-wafer wafer surface roughness control method that can be different.
- a single-wafer wafer cleaning apparatus for achieving the above technical problem is cleaned by supplying a first chemical substance to the upper portion of the wafer seated on the upper part of the rotating spindle table.
- the lower portion of the wafer is cleaned by supplying the first chemical and a second chemical different from the first chemical, wherein the first chemical is ozone water, and the second chemical is hydrofluoric acid.
- the spin chamber has a spindle table mounted thereon and a spindle table that rotates during the cleaning process.
- the first chemical material supply device supplies the cleaning chemical I to the upper portion of the rotating wafer while the cleaning process is in progress.
- the second chemical material supply device supplies the cleaning chemical II to the lower portion of the rotating wafer while the cleaning process is in progress.
- the third chemical material supply device supplies the cleaning chemical III to the lower portion of the rotating wafer while the cleaning process is in progress.
- the cleaning chemical I and the cleaning chemical II are ozone water
- the cleaning chemical III is hydrofluoric acid.
- the single-wafer wafer surface roughness control method for achieving the other technical problem is a spindle table rotation step of rotating a spindle table on which a wafer is seated, rotating together with the spindle table A first chemical material supply step of supplying cleaning chemical I to the upper portion of the wafer, and a second & second & A third chemical co-supply step is performed.
- a single-wafer wafer surface roughness control method for achieving the above other technical problem is a spindle table rotating step of rotating a spindle table on which a wafer is seated, rotating with the spindle table and A first chemical material supply step of supplying cleaning chemical I to the upper portion of the wafer, and a first chemical material supplying step of alternately supplying cleaning chemical II and cleaning chemical III to the lower portion of the wafer rotating together with the spindle table Carry out the 2nd & 3rd chemical cross-feeding steps.
- a single-wafer wafer surface roughness control method for achieving the above other technical problem is a spindle table rotation step of rotating a spindle table on which a wafer is seated, and the spindle table together with the The first to third chemical material simultaneous supply steps of supplying the first chemical material to the upper portion of the rotating wafer, and simultaneously supplying the second chemical material and the third chemical material to the lower portion of the wafer are performed.
- the single-wafer wafer cleaning apparatus and single-wafer wafer surface roughness control method according to the present invention different cleaning chemicals are used for the front surface of the wafer and the back surface of the wafer in the cleaning process of the wafer. Since the back side of the wafer can be made rougher than the front side of the wafer, it is possible to minimize the generation of impurity particles and the transfer of impurity particles to the front side of the wafer due to the sliding of the wafer during the wafer and semiconductor manufacturing process. There are advantages.
- FIG. 1 illustrates an example of a cleaning process of a conventional batch method.
- 3 illustrates an example of a wafer having different roughness on both sides.
- FIG. 4 illustrates an embodiment of a single-wafer wafer cleaning apparatus according to the present invention.
- FIG 5 is an embodiment of a single-wafer wafer surface roughness control method according to the present invention.
- FIG. 6 illustrates an example of the time, concentration, and flow rate of chemicals supplied in an embodiment of the single-wafer wafer surface roughness control method shown in FIG. 5 and the rotational speed of the spindle table.
- FIG. 8 explains an example of the time, concentration, and flow rate of chemicals supplied in another embodiment of the single-wafer wafer surface roughness control method shown in FIG. 7 and the rotational speed of the spindle table.
- 9 is another embodiment of the single-wafer wafer surface roughness control method according to the present invention.
- FIG. 10 explains an example of the time, concentration, and flow rate of chemicals supplied in another embodiment of the single-wafer wafer surface roughness control method shown in FIG. 9 and the rotation speed of the spindle table.
- 11 shows the degree of roughness of both sides of the wafer when the top and bottom of the wafer are cleaned at the same time or at different times.
- the core idea of the present invention is to perform the cleaning of the upper part of the wafer and the cleaning of the lower part of the wafer at different times, and when cleaning the wafer, the cleaner used on the upper part of the wafer and the cleaner used on the lower part of the wafer are different from each other. It is to allow selective control of the surface roughness of the upper (or front) and the lower (or back) of the wafer. Through this process, the surface roughness of the lower portion of the wafer will be rougher than the surface roughness of the upper portion of the wafer.
- the surface roughness of the upper portion of the wafer is controlled using a first chemical, that is, ozone water (O 3 ), and the surface roughness of the lower portion of the wafer is controlled using the first chemical and the second chemical, that is, hydrofluoric acid (HF). to control the surface roughness.
- a first chemical that is, ozone water (O 3 )
- the surface roughness of the lower portion of the wafer is controlled using the first chemical and the second chemical, that is, hydrofluoric acid (HF).
- the surface roughness of the upper portion of the wafer using ozone water is 0.9 ⁇ to 1.0 ⁇ .
- the experimental result was obtained that the surface roughness of the lower part of the wafer was 1.5 ⁇ or more.
- the surface roughness of the lower part of the wafer is the difference between ozone water and hydrofluoric acid when ozone water and hydrofluoric acid are simultaneously injected.
- Experimental results were obtained that it is more rough than the case of alternating input (cross-injection).
- the single-wafer wafer cleaning apparatus 400 includes a spin chamber 410 , a spindle table 420 , a first chemical material supply apparatus 430 , and a second chemical material supply apparatus 440 . ) and a third chemical material supply device 450 .
- the cleaning chemical I and the cleaning chemical II use ozone (O 3 ) or ozone water
- the cleaning chemical III uses hydrofluoric acid (HF).
- FIG 5 is an embodiment of a single-wafer wafer surface roughness control method according to the present invention.
- the single-wafer wafer surface roughness control method 500 includes a spindle table rotation step 510 , a first chemical material supply step 520 , and a second & third chemical material simultaneous supply step (530).
- the spindle table rotation step 510 the spindle table on which the wafer is seated is rotated.
- the first chemical that is, chemical I
- de-ionized ozone water is supplied to the upper portion of the wafer rotating together with the spindle table. At this time, no cleaning chemicals are supplied to the lower part of the wafer.
- the second chemical and the third chemical that is, the second chemical, cleaning chemical II and cleaning chemical
- the second chemical and the third chemical are placed on the lower portion of the wafer rotating together with the spindle table.
- Substance III is supplied.
- the cleaning chemical II and the cleaning chemical III are ozone water and hydrofluoric acid. At this time, no cleaning chemicals are supplied on the upper part of the wafer.
- the first chemical material supply step 520 and the second & third chemical material supply step 530 have no problem regardless of which step is performed in advance, but when cleaning one side (eg, the top) of the wafer The opposite side of the wafer (eg, the bottom) is to avoid the cleaning process.
- FIG. 6 illustrates an example of the time, concentration, and flow rate of chemicals supplied in an embodiment of the single-wafer wafer surface roughness control method shown in FIG. 5 and the rotational speed of the spindle table.
- the single-wafer wafer surface roughness control method 700 includes a spindle table rotation step 710 , a first chemical material supply step 720 , and a second & third chemical material cross-supply step (730).
- the spindle table rotation step 710 the spindle table on which the wafer is seated is rotated.
- the first chemical material supply step 720 a first chemical material is supplied to the upper portion of the wafer rotating together with the spindle table.
- the second chemical material and the third chemical material are alternately supplied to the lower portion of the wafer rotating together with the spindle table.
- the single-wafer wafer surface roughness control method 700 shown in FIG. 7 is different from the single-wafer wafer surface roughness control method 500 shown in FIG. Although the same, it is different from the single-wafer wafer surface roughness control method 500 shown in FIG.
- FIG. 8 explains an example of the time, concentration, and flow rate of chemicals supplied in another embodiment of the single-wafer wafer surface roughness control method shown in FIG. 7 and the rotational speed of the spindle table.
- ozone water in an amount of 0.5 to 1.5 lpm having a concentration of 5 to 20 ppm is supplied to the upper portion of the wafer rotating at a speed of 500 to 1500 rpm for 1 to 5 seconds. (the left part of FIG. 8).
- Hydrofluoric acid in an amount of 0.5 to 1.5 lpm is supplied for 1 to 5 seconds (right part of FIG. 8).
- the process of cleaning the upper and lower portions of the wafer alternately be performed at least 12 times and up to 18 times.
- FIG. 7 is the same as the embodiment shown in FIG. 5 in that the cleaning moments of the upper part of the wafer and the lower part of the wafer are different from each other, but the second chemical and the third chemical are simultaneously applied when cleaning the lower part. It is different from the embodiment shown in FIG. 5 in that it is used alternately without being used.
- 9 is another embodiment of the single-wafer wafer surface roughness control method according to the present invention.
- the single-wafer wafer surface roughness control method 900 includes a spindle table rotation step 910 and a first to third chemical substance simultaneous supply step 920 .
- the spindle table rotation step 910 the spindle table on which the wafer is seated is rotated.
- the first chemical material is supplied to the upper portion of the wafer being rotated together with the spindle table, and the second chemical material and the third chemical material are supplied to the lower portion of the wafer. .
- FIG. 10 explains an example of the time, concentration, and flow rate of chemicals supplied in another embodiment of the single-wafer wafer surface roughness control method shown in FIG. 9 and the rotation speed of the spindle table.
- ozone water in an amount of 0.5 to 1.5 lpm having a concentration of 5 to 20 ppm is added to the upper portion of the wafer rotating at a speed of 500 to 1500 rpm. Feed for 120 seconds.
- FIG. 9 is different from the embodiment shown in FIGS. 5 and 7 in that the cleaning operation is completed once for 6 to 120 seconds.
- 11 shows the degree of roughness of both sides of the wafer when the top and bottom of the wafer are cleaned at the same time or at different times.
- FIG. 11 the results of performing the embodiment shown in FIGS. 5 to 7 are displayed.
- the center of both the front side and the backside of the wafer and a place a certain distance away from the center were measured for each roughness.
- the roughness of the front side of the wafer is about 0.9 ⁇ (Angstrom, Angstrom), while the roughness of the back side of the wafer is about 0.9 ⁇ rougher in the example of co-feed compared to the example of cross feeding.
- the surface roughness of the backside of the wafer according to the cross-supply shown on the left side of FIG. 11 is 1.5 ⁇ at the center, and the roughness at 50 mm, 100 mm and 140 mm away from the center is 1.6 ⁇ , 1.7 ⁇ , and 1.6 ⁇ , respectively. It can be seen that all of them have a roughness of 1.5 ⁇ or more.
- the surface roughness of the back side of the wafer according to the simultaneous supply shown on the right side of FIG. 11 is 2.4 ⁇ at the center, and the roughness at 50 mm, 100 mm and 140 mm away from the center is 2.5 ⁇ , 2.6 ⁇ , and 2.5 ⁇ , respectively. It can be seen that has
- the back side of the wafer can be manufactured to be rougher than the front side of the wafer, so that slippage when the wafer is seated on the stage in the subsequent process is minimized. and thus, it is possible to minimize the generation of impurity particles due to the sliding of the wafer as in the conventional case.
- batch-type cleaning which had a high proportion of use, only had the same roughness on the front and back surfaces of the wafer, and it was not easy to control the degree of roughness.
- the present invention relates to a wafer cleaning apparatus, and since it is possible to solve the problem that impurity particles are transferred to the front surface of the wafer during the wafer manufacturing process, it is possible to improve the manufacturing yield of the semiconductor industry.
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Abstract
Description
Claims (14)
- 회전하는 스핀들 테이블의 상부에 안착한 웨이퍼의 상부에는 제1 화학물질을 공급하여 세정하고. 상기 웨이퍼의 하부에는 상기 제1화학물질 및 상기 제1화학물질과 다른 제2화학물질을 공급하여 세정하며,상기 제1 화학물질은 오존수이고, 상기 제2 화학물질은 불산인 매엽식 웨이퍼 세정장치.
- 상부에 웨이퍼가 안착하며 세정 공정 중 회전하는 스핀들 테이블을 내장하는 스핀 챔버;세정 공정이 진행되는 도중 세정용 화학물질Ⅰ을 회전하고 있는 상기 웨이퍼의 상부에 공급하는 제1 화학물질 공급장치;세정 공정이 진행되는 도중 세정용 화학물질Ⅱ를 회전하고 있는 상기 웨이퍼의 하부에 공급하는 제2화학물질 공급장치; 및세정 공정이 진행되는 도중 세정용 화학물질Ⅲ을 회전하고 있는 상기 웨이퍼의 하부에 공급하는 제3화학물질 공급장치를 포함하며,상기 세정용 화학물질Ⅰ 및 상기 세정용 화학물질Ⅱ는 오존수이고, 상기 세정용 화학물질Ⅲ은 불산인 매엽식 웨이퍼 세정장치.
- 제2항에서,상기 제1화학물질 공급장치가 상기 웨이퍼의 상부에 상기 세정용 화학물질Ⅰ을 공급하는 동안에는 상기 제2화학물질 공급장치 및 상기 제3화학물질 공급장치가 상기 세정용 화학물질Ⅱ 및 상기 세정용 화학물질Ⅲ을 상기 웨이퍼의 하부에 공급하지 않고,상기 제2화학물질 공급장치 및 상기 제3화학물질 공급장치가 상기 세정용 화학물질Ⅱ 및 상기 세정용 화학물질Ⅲ을 상기 웨이퍼의 하부에 공급하고 있는 동안에는 상기 제1화학물질 공급장치가 상기 웨이퍼의 상부에 상기 세정용 화학물질Ⅰ을 공급하지 않는 매엽식 웨이퍼 세정장치.
- 제3항에서,상기 제2화학물질 공급장치 및 상기 제3화학물질 공급장치가 상기 세정용 화학물질Ⅱ 및 상기 세정용 화학물질Ⅲ을 상기 웨이퍼의 하부에 공급할 때,상기 세정용 화학물질Ⅱ 및 상기 세정용 화학물질Ⅲ을 상기 웨이퍼의 하부에 동시에 공급하는 매엽식 웨이퍼 세정장치.
- 제3항에서,상기 제2화학물질 공급장치 및 상기 제3화학물질 공급장치가 상기 세정용 화학물질Ⅱ 및 상기 세정용 화학물질Ⅲ을 상기 웨이퍼의 하부에 공급할 때,상기 세정용 화학물질Ⅱ 및 상기 세정용 화학물질Ⅲ을 상기 웨이퍼의 하부에 번갈아 가면서 공급하는 매엽식 웨이퍼 세정장치.
- 제2항에서,상기 웨이퍼의 상부에는 상기 세정용 화학물질Ⅰ을 공급하고, 이와 동시에, 상기 웨이퍼의 하부에는 상기 세정용 화학물질Ⅱ 및 상기 세정용 화학물질Ⅲ을 공급하는 매엽식 웨이퍼 세정장치.
- 상부에 웨이퍼가 안착한 스핀들 테이블을 회전시키는 스핀들 테이블 회전단계;상기 스핀들 테이블과 함께 회전하고 있는 상기 웨이퍼의 상부에 세정용 화학물질Ⅰ을 공급하는 제1 화학물질 공급단계; 및상기 스핀들 테이블과 함께 회전하고 있는 상기 웨이퍼의 하부에 세정용 화학물질Ⅱ와 세정용 화학물질Ⅲ을 공급하는 제2 & 제3 화학물질 동시공급단계를 수행하는 매엽식 웨이퍼 표면 거칠기 제어방법.
- 제7항에서,상기 제1 화학물질 공급단계에서는 500~1500 rpm의 속도로 회전하고 있는 웨이퍼의 상부에 5~20 ppm 농도를 가진 0.5~1.5 lpm 양의 오존수를 1~5초 동안 공급하고,상기 제2 & 제3 화학물질 공급단계에서는 500~1500 rpm의 속도로 회전하고 있는 웨이퍼의 상부에 5~20 ppm 농도를 가진 0.5~1.5 lpm 양의 오존수와 0.2~1.0 wt% 농도를 가진 0.5~1.5 lpm 양의 불산을 1~5초 동안 공급하는 매엽식 웨이퍼 표면 거칠기 제어방법.
- 제7항에서,상기 스핀들 테이블 회전단계, 상기 제1 화학물질 공급단계 및 상기 제2 & 제3 화학물질 동시공급단계를 최소 12회에서 최대 18회 반복 수행하는 매엽식 웨이퍼 표면 거칠기 제어방법.
- 상부에 웨이퍼가 안착한 스핀들 테이블을 회전시키는 스핀들 테이블 회전단계;상기 스핀들 테이블과 함께 회전하고 있는 상기 웨이퍼의 상부에 세정용 화학물질Ⅰ을 공급하는 제1 화학물질 공급단계; 및상기 스핀들 테이블과 함께 회전하고 있는 상기 웨이퍼의 하부에 세정용 화학물질Ⅱ와 세정용 화학물질Ⅲ을 번갈아 공급하는 제2 & 제3 화학물질 교차공급단계를 수행하는 매엽식 웨이퍼 표면 거칠기 제어방법.
- 제10항에서,상기 제1 화학물질 공급단계에서는 500~1500 rpm의 속도로 회전하고 있는 웨이퍼의 상부에 5~20 ppm 농도를 가진 0.5~1.5 lpm 양의 오존수를 1~5초 동안 공급하고,상기 제2 & 제3 화학물질 공급단계에서는 500~1500 rpm의 속도로 회전하고 있는 웨이퍼의 상부에 5~20 ppm 농도를 가진 0.5~1.5 lpm 양의 오존수와 0.2~1.0 wt% 농도를 가진 0.5~1.5 lpm 양의 불산을 1~5초 동안 공급하는 매엽식 웨이퍼 표면 거칠기 제어방법.
- 제10항에서,상기 스핀들 테이블 회전단계, 상기 제1 화학물질 공급단계 및 상기 제2 & 제3 화학물질 교차공급단계를 최소 12회에서 최대 18회 반복 수행하는 매엽식 웨이퍼 표면 거칠기 제어방법.
- 상부에 웨이퍼가 안착한 스핀들 테이블을 회전시키는 스핀들 테이블 회전단계; 및상기 스핀들 테이블과 함께 회전하고 있는 상기 웨이퍼의 상부에 제1 화학물질을 공급하고, 이와 동시에 웨이퍼의 하부에 제2 화학물질 및 제3 화학물질을 공급하는 제1 내지 제3 화학물질 동시공급단계를수행하는 매엽식 웨이퍼 표면 거칠기 제어방법.
- 제13항에서, 상기 제1 내지 제3 화학물질 동시공급단계에서는,500~1500 rpm의 속도로 회전하고 있는 상기 웨이퍼의 상부에는 5~20ppm 농도를 가진 0.5~1.5 lpm 양의 오존수를 6 ~ 120초 동안 공급하고, 이와 동시에 상기 웨이퍼의 하부에는 5~20ppm 농도를 가진 0.5~1.5 lpm 양의 오존수와 0.2~1.0wt% 농도를 가진 0.5~1.5 lpm 양의 불산을 6 ~ 120초 동안 공급하는 매엽식 웨이퍼 표면 거칠기 제어방법.
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US20130034966A1 (en) * | 2011-08-04 | 2013-02-07 | Taiwan Semiconductor Manufacturing Company, Ltd., ("Tsmc") | Chemical dispersion method and device |
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US8657963B2 (en) * | 2011-09-22 | 2014-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | In-situ backside cleaning of semiconductor substrate |
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US20130034966A1 (en) * | 2011-08-04 | 2013-02-07 | Taiwan Semiconductor Manufacturing Company, Ltd., ("Tsmc") | Chemical dispersion method and device |
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