WO2022153774A1 - Wafer holding device - Google Patents
Wafer holding device Download PDFInfo
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- WO2022153774A1 WO2022153774A1 PCT/JP2021/046437 JP2021046437W WO2022153774A1 WO 2022153774 A1 WO2022153774 A1 WO 2022153774A1 JP 2021046437 W JP2021046437 W JP 2021046437W WO 2022153774 A1 WO2022153774 A1 WO 2022153774A1
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- Prior art keywords
- support portion
- support
- wafer
- mode
- elevating
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- 230000003028 elevating effect Effects 0.000 claims description 122
- 230000001174 ascending effect Effects 0.000 claims description 30
- 238000001514 detection method Methods 0.000 claims description 15
- 239000013589 supplement Substances 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 description 181
- 230000002093 peripheral effect Effects 0.000 description 18
- 238000012545 processing Methods 0.000 description 14
- 230000001965 increasing effect Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 238000007689 inspection Methods 0.000 description 7
- 238000004891 communication Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000005484 gravity Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000005060 rubber Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012937 correction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000011179 visual inspection Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Definitions
- the present invention relates to a wafer holding device that receives a wafer (a substantially circular thin plate) carried by a handler or the like in a horizontal state and holds it in a predetermined posture.
- the wafer holding device is used by being incorporated in a processing device for processing and processing a wafer, an appearance inspection device for imaging and inspecting the appearance of a device chip formed on the wafer, and the like.
- a semiconductor device is formed by stacking a large number of semiconductor device circuits (that is, repeated appearance patterns of device chips) on one semiconductor wafer in layers, and then individualized into individual chip components, and the chip components are separated into individual chip components. It is packaged and shipped alone as an electronic component or incorporated into an electrical product.
- the inspection image obtained by capturing the repeated appearance pattern of the device chip formed on the wafer is compared with the reference image, and the inspection regarding the quality of each chip component is performed. It is performed (for example, Patent Document 1).
- the wafer to be inspected is carried from the cassette carrier or the like to the visual inspection device by an automatic transfer device called a handler, and the inspected substrate is paid out and the uninspected substrate is delivered.
- a wafer to be inspected by a visual inspection device is imaged and inspected by being supported by a wafer holding table having a flat upper surface and being sucked and held (for example, a patent).
- Document 2 a wafer to be inspected by a visual inspection device is imaged and inspected by being supported by a wafer holding table having a flat upper surface and being sucked and held.
- the wafer to be inspected is a thin plate or has residual stress, even if the outer circumference of the wafer is held in a flat posture, warpage or deformation is likely to occur, so that a part of the outer circumference of the wafer floats. Sometimes it could not be held in the desired posture.
- a wafer holding device capable of reliably holding a wafer in a desired posture even when only a part of the lower part of the outer circumference of the wafer is allowed to come into contact with the wafer, which is easily warped or deformed.
- the purpose is to do.
- one aspect of the present invention is A wafer holding device that receives a wafer in a horizontal position and holds it in a predetermined posture.
- the first support portion that supports the first support portion that is divided and set in at least three places so as to surround the center of the wafer is supported from below.
- the second support portion that supports the second support portion set at a position that supplements between the first support portions from below, and the second support portion.
- the third support portion that supports the third support portion set at a position that complements between the first support portion and the second support portion from below, and the third support portion.
- a first elevating part that changes the relative height between the upper end of the first support part and the upper end of the second support part
- a second elevating part that changes the relative height between the upper end of the second support part and the upper end of the third support part
- a negative pressure suction part that creates a negative pressure in the first support part and sucks and holds the wafer
- the control unit A first support mode in which the upper end of the first support portion is arranged above the heights of the upper end of the second support portion and the upper end of the third support portion.
- a second support mode in which the upper end of the first support portion and the upper end of the second support portion are arranged at the same height above the height of the upper end of the third support portion. It has at least a third support mode in which the heights of the upper ends of the first support and the upper ends of the second support are arranged at the same height as the height of the upper ends of the third support. While sucking and holding the wafer received in the first support mode, the wafer is switched from the first support mode to the second support mode and then switched to the third support mode.
- the location and area for supporting the wafer can be increased stepwise, even if the wafer is liable to warp or deform, it is possible to prevent the outer peripheral portion from being partially lifted and in a desired posture.
- the outer peripheral portion can be held.
- the three axes of the Cartesian coordinate system are expressed as X, Y, and Z
- the horizontal direction is expressed as the X direction and the Y direction
- the direction perpendicular to the XY plane that is, the gravity direction
- the Z direction is expressed as the Z direction.
- the direction against gravity is expressed as the upper direction
- the direction in which gravity acts is expressed as the lower direction.
- FIG. 1 is a perspective view showing an example of a wafer holding device in a form embodying the present invention.
- FIG. 2 is a plan view showing an example of a wafer holding device in a form embodying the present invention.
- FIGS. 1 and 2 show each part constituting the wafer holding device 1 according to the present invention and an example of its arrangement.
- FIG. 3 is a block diagram showing an example of a wafer holding device in a form embodying the present invention.
- FIG. 3 illustrates the relationship between each unit constituting the wafer holding device 1 according to the present invention and the control unit.
- the wafer holding device 1 receives the wafer W carried by a handler (not shown) or the like in a horizontal state and holds the wafer W in a predetermined posture.
- the area where the circuit pattern is formed and the area where the functional film is formed are adhered to dirt, foreign matter, etc. and scratches. Contact is not allowed to avoid dents and the like.
- the area outside these areas is called a contact allowable area R, and contact is permitted for handling and the like.
- the wafer holding device 1 includes a first support portion 2, a second support portion 3, a third support portion 4, a first elevating portion 5, a second elevating portion 6, a negative pressure suction unit 8, and a control unit 9. Etc. are provided.
- the first support portion 2 is formed by allocating the first support portion S1 set to at least three places in the contact allowable region R set in the lower outer peripheral portion Wb of the wafer W so as to surround the center Wc of the wafer W. It supports from below.
- the first support portion 2 includes a first contact support portion 21, a support column 22, a connecting portion 23, and the like.
- the first contact support portion 21 contacts the first support portion S1 of the lower outer peripheral portion Wb of the wafer W, and supports and holds the first support portion S1 from below. Specifically, when the center Wc of the wafer W is used as a reference in a plan view, the first support portion S1 is set at three locations distributed at intervals of about 120 degrees, and the positions correspond to these portions S1.
- the first contact support portions 21 are arranged at three locations. More specifically, the first contact support portion 21 is arranged at the upper end of the first support portion 2, and the main body is made of metal, resin, rubber, or the like, and the air communication port through which the upper end and air communicate with each other. It has a structure (for example, a tubular shape).
- the support column 22 aligns the upper end position of the first contact support portion 21 with a predetermined height.
- the support column 22 is composed of a rod-shaped member having a predetermined length in the thickness direction (Z direction) of the wafer W.
- the connecting portion 23 is connected to the first elevating portion 5 while fixing the lower parts of the columns 22 respectively.
- the connecting portion 23 has a substantially Y-shape when viewed in a plan view, and is composed of a plate-shaped member having a shape extending radially from the vicinity of the center.
- the second support portion 3 supports the second support portion S2 set at a position that supplements the space between the first support portions S1 in the contact allowable region R set in the lower outer peripheral portion Wb of the wafer W from below.
- the second support portion 3 includes a second contact support portion 31, a support column 32, a connecting portion 33, and the like.
- the second contact support portion 31 contacts the second support portion S2 set at a position to supplement the space between the first support portions S1 of the lower outer peripheral portion Wb of the wafer W, and supports the second support portion S2 from below. be.
- the second support portion S2 is set at three locations distributed at positions displaced by about 60 degrees from the first support portion S1.
- the second contact support portion 31 is arranged so that the position corresponds to these portions S2. More specifically, the second contact support portion 31 is arranged at the upper end of the second support portion 3, and the main body is made of metal, resin, rubber, or the like, and the air communication port through which the upper end and air communicate with each other. It has a structure (for example, a tubular shape).
- the support column 32 aligns the upper end position of the second contact support portion 31 with a predetermined height.
- the support column 32 is composed of a rod-shaped member having a predetermined length in the thickness direction (Z direction) of the wafer W.
- the connecting portion 33 connects to the second elevating portion 6 while fixing the lower part of the support column 32, respectively.
- the connecting portion 33 has a substantially Y-shape when viewed in a plan view, and is composed of a plate-shaped member having a shape extending radially from the vicinity of the center.
- the third support portion 4 has a third support portion S3 set at a position that supplements between the first support portion S1 and the second support portion S2 in the contact allowable region R set in the lower outer peripheral portion Wb of the wafer W. , Support from below.
- the third support portion 4 includes a third contact support portion 41, a support column 42, an arc-shaped contact support portion 43, and the like.
- the third contact support portion 41 is at least a part (circular region) of the third support portion S3 set at a position to supplement between the first support portion S1 and the second support portion S2 of the lower outer peripheral portion Wb of the wafer W. ), And supports the third support portion S3 from below. Specifically, when the center Wc of the wafer W is used as a reference in a plan view, the third contact support portion 41 is displaced by about 30 degrees with respect to the first contact support portion 21 or the second contact support portion 31. It is arranged in 6 places distributed to the above positions.
- the third contact support portion 41 is arranged at the upper end of the third support portion 4, and the main body is made of metal, resin, rubber, or the like, and the air communication port through which the upper end and air communicate with each other. It has a structure (for example, a tubular shape).
- the support column 42 aligns the upper end position of the second contact support portion 31 with a predetermined height.
- the support column 42 is composed of a rod-shaped member having a predetermined length in the thickness direction (Z direction) of the wafer W.
- the arc-shaped contact support portion 43 is a third support portion set at a position that complements between the first support portion S1 and the second support portion S2 in the contact allowable region R set in the lower outer peripheral portion Wb of the wafer W. It abuts on the arcuate region of S3 and supports the region from below. Further, the arcuate contact support portion 43 is arranged so that the upper end thereof is set at the same height as the upper end of the third contact support portion 41. Specifically, when the center Wc of the wafer W is used as a reference in a plan view, the arcuate contact support portion 43 is the first contact support portion 21, the second contact support portion 31, and the third contact support portion.
- Arc-shaped members along the outer edge shape of the wafer W are arranged at positions (for example, 12 places) that fill the gaps of 41. More specifically, the arc-shaped contact support portion 43 is made of metal, resin, rubber, or the like, and is attached to the device frame 1f via a connecting metal fitting or the like (not shown).
- the "same height" includes not only a state where the height is the same in micron units but also a state where the height can be regarded as the same within a range that does not hinder the handling of the waha W, and a slight error in the vertical direction (for example,). An error in millimeters caused by deformation of the elastic member) may be included (the same applies hereinafter).
- the first elevating part 5 changes the relative height between the upper end of the first support part 2 and the upper end of the second support part 3. Specifically, the first elevating portion 5 moves the first supporting portion 2 up and down in the thickness direction (Z direction) of the wafer W, and moves the connecting member 23 of the first supporting portion 2 in the vertical direction (Z direction). ), A rod 51 that moves up and down, a main body 52 attached to the frame 1f, and the like are provided. More specifically, the first elevating unit 5 is composed of a mechanism (so-called actuator) that converts rotary motion into linear motion, such as a rack and pinion mechanism and a cam mechanism, and is a motor (stepping motor) that performs rotary motion. And servo motors, etc.).
- a mechanism that converts rotary motion into linear motion
- This motor is connected to the control unit 8 and rotates at a predetermined rotation speed or stops at a predetermined angle. Therefore, the first elevating unit 5 can move the rod 51 at a predetermined speed or stop it at a predetermined position based on the control signal from the control unit 8. Therefore, the first elevating part 5 can move the first supporting part 2 in the vertical direction or make it stationary at a predetermined height.
- the second elevating part 6 changes the relative height between the upper end of the second support part 3 and the upper end of the third support part 4. Specifically, the second elevating portion 6 moves the second supporting portion 4 up and down in the thickness direction (Z direction) of the wafer W, and moves the connecting member 33 of the second supporting portion 3 in the vertical direction (Z direction). ), A rod 61 that moves up and down, a main body 62, and the like attached to the frame 1f are provided. More specifically, the second elevating unit 6 has the same configuration as the first elevating unit 5, and the rod 61 is moved at a predetermined speed or determined based on the control signal from the control unit 8. It can be stopped at the position of. Therefore, the second elevating part 6 can move the second supporting part 3 in the vertical direction or make it stationary at a predetermined height.
- the negative pressure suction unit 8 creates a negative pressure in the first support portion S1, the second support portion S2, and the third support portion S3 to suck and hold the wafer W.
- the negative pressure suction unit 8 generates a negative pressure at the upper ends of the first support portion 2, the second support portion 3, and the third support portion 4 that come into contact with the lower outer peripheral portion Wb of the wafer W, thereby causing the wafer. It sucks and holds W.
- the negative pressure suction portion 8 includes an air pipe, a switching valve, which are connected to the air communication ports of the first contact support portion 21, the second contact support portion 31, and the third contact support portion 41. It is composed of negative pressure generating means and the like.
- the switching valve communicates (that is, sucks and holds) the air communication ports of the first contact support portion 21, the second contact support portion 31, and the third contact support portion 41 with the negative pressure generating means. It individually switches whether to communicate with the air (that is, release suction), and is connected to the control unit 8.
- Examples of the negative pressure generating means include vacuum pumps, ejectors, pressure tanks connected to them, connecting pipes, and the like.
- the first contact support portion 21, the second contact support portion 31, and the third contact support portion 41 are connected to a negative pressure generating means such as a vacuum pump via a switching valve or the like. Then, the first contact support portion 21, the second contact support portion 31, and the third contact support portion 41 control the switching valve or the like by the control unit 8 to switch to the negative pressure state or the atmosphere release state. Then, the wafer W can be held and released.
- a negative pressure generating means such as a vacuum pump via a switching valve or the like.
- the control unit 9 controls changes in the relative heights of the first elevating unit 5 and the second elevating unit 6. Further, the control unit 9 controls switching of suction holding or release by the negative pressure suction unit 8. Specifically, the control unit 9 controls the motor of the first elevating unit 5 and the motor of the second elevating unit 6, and sets the height at which the wafer W is supported and held by the upper position H / middle position M / lower position. It is changed to L.
- the control unit 9 has a first support mode for switching to the upper position H, a second support mode for switching to the middle position M, and a third support mode for switching to the lower position L, and the control unit 9 can switch to these support modes.
- the upper position H / middle position M / lower position L referred to here are the upper end of the first support portion 2, the upper end of the second support portion 3, and the third, regardless of the difference in the height at which the wafer W is supported. It is a name defined based on the positional relationship between the upper ends of the support portions 4.
- control unit 9 is composed of a computer, a programmable logic controller, etc. (that is, hardware) and an execution program thereof (that is, software), and each unit (first elevating unit) to be controlled. 5 and the motor of the second elevating unit 5, the switching valve of the negative pressure suction unit 8, etc.) and the control signal are input and output to perform a predetermined control process.
- FIG. 4 is a cross-sectional view showing an example of a wafer holding device in a form embodying the present invention.
- FIG. 4A shows that the wafer W is supported at the upper position H.
- FIG. 4B shows that the wafer W is supported at the middle position M.
- FIG. 4C shows how the wafer W is supported at the lower position L.
- the upper position refers to a positional relationship in which the upper end of the first support portion 2 is arranged above the heights of the upper end of the second support portion 3 and the upper end of the third support portion 4. Then, the mode that shifts to such a state and keeps the state is called a "first support mode". Specifically, in the first support mode, the upper end of the first contact holding portion 21 is arranged above the height of the upper ends of the second contact holding portion 31 and the third contact holding portion 41.
- the first contact holding portion 21 comes into contact with the first support portion S1 of the wafer W, but the second support portion S2 And the second contact holding portion 31, and the third support portion S3 and the third contact holding portion 41 are separated from each other.
- the wafer W whose lower outer periphery is supported at three places is easily bent, and the portion of the wafer W other than the first support portion S1 (for example, the second support portion S2) is often in a hanging state.
- the middle position is above the height of the upper end of the third support portion 4, and refers to a positional relationship in which the upper end of the first support portion 2 and the upper end of the second support portion 3 are arranged at the same height.
- the mode that shifts to such a state and keeps the state is called a "second support mode".
- the upper end of the first support portion 2 and the upper end of the second support portion 3 are arranged at the same height above the height of the upper end of the third contact holding portion 41. ..
- the first support portion S1 of the wafer W and the first contact holding portion 21 remain in contact with each other. Further, the second support portion S2 and the second contact holding portion 31 come into contact with each other. That is, the number of places for supporting the lower outer peripheral portion Wb of the wafer W increases, and the interval for supporting the wafer W becomes narrower. At this time, the deflection of the wafer W whose lower outer periphery is supported at six points is improved, and the portion of the wafer W that is not the first support portion S1 and the second support portion S2 (for example, the third support portion S3, etc.) hangs down. Decreases.
- the lower position refers to a positional relationship in which the heights of the upper end of the first support portion 2 and the upper end of the second support portion 3 are arranged at the same height as the height of the upper end of the third support portion 4.
- the mode that shifts to such a state and keeps the state is called a "third support mode".
- the heights of the upper end of the first contact holding portion 21 and the upper end of the second contact holding portion 31 are the same as the height of the upper end of the third contact holding portion 41. To be placed in.
- the wafer W is held in the second support mode (middle position) and then switched to the third support mode (lower position), the first support portion S1 of the wafer W and the first contact holding portion 21 come into contact with each other, and the second support mode (lower position) is used. 2 While the support portion S2 and the second contact holding portion 31 are in contact with each other, the third support portion S3 and the third contact holding portion 41 are further in contact with each other. At this time, since the wafer W supports the lower part of the outer circumference over the entire outer circumference, the central portion Wc has a dent due to its own weight, but if only the outer circumference is focused, the sagging is improved and the wafer W is supported in a flat state. It becomes.
- FIG. 5 is a flow chart showing an example of an operation flow in a mode embodying the present invention.
- the wafer holding device 1 switches the control unit 9 to the first support mode (upper position) and stands by (step s1).
- step s2 the wafer W is placed (step s2), and the first support portion S1 of the wafer W is sucked and held (step s3).
- the third support mode (lower stage position) is switched to (step s5).
- a negative pressure is generated in the second support portion S2 to suck and hold the wafer W, and the second support mode (middle stage).
- a negative pressure is generated in the third support portion S3 to suck and hold the wafer W.
- step s6 a desired process, inspection, etc. is executed (step s6), and it is determined whether or not the process, etc. is completed (step s7). Then, if the processing or the like is not completed, the above-mentioned step s6 is continued, and if the processing or the like is completed, the series of flows is terminated.
- the wafer holding device 1 Since the wafer holding device 1 according to the present invention has such a configuration, the location and area for supporting the wafer W can be increased stepwise, so that even if the wafer W is liable to warp or deform. , The outer peripheral portion can be held in a desired posture while preventing the outer peripheral portion from being partially lifted. Therefore, when holding a wafer that is prone to warping or deformation, it can be reliably held in a desired posture even when only a part of the lower portion of the outer circumference of the wafer is allowed to come into contact with the wafer.
- the third support portion 4 is not limited to such a configuration, and the present invention can be embodied even with other configurations.
- the third contact support portion 41 may be omitted, and the arcuate contact support portion 43 may be arranged at a plurality of locations at a distance.
- the arc-shaped contact support portion 43 may be omitted, and the third contact support portion 41 may be spaced apart from each other at a plurality of locations. Even with such a configuration, since the contact allowable region R set in the lower outer peripheral portion Wb of the wafer W is supported at a plurality of locations over the entire circumference, the wafer W can be reliably held in a desired posture.
- the first support portion S1 and the second support portion S2 are set at positions where they are distributed and arranged at intervals of 60 degrees, and the positions that supplement the gaps between the first support portion S1 and the second support portion S2.
- a third support portion S3 is set in the above, and the first contact support portion 21, the second contact support portion 31, the third contact support portion 41, and the arc-shaped contact are located at positions corresponding to these portions S1 to S3.
- the configuration in which the contact support portion 43 is arranged is illustrated.
- the outer circumference of the wafer W is evenly distributed and supported from below, and when the support state is switched from the upper position to the middle position and the lower position, it is easy to improve the warp of the outer circumference of the wafer, which is preferable. ..
- the first support portion S1 and the second support portion S2 are not limited to such an even arrangement, and may be appropriately changed. Further, the first support portion S1 may be set at four or more locations, and the second support portion S2 may be set at four or more locations. The number of these support points may be appropriately determined according to the thickness of the wafer W, the amount of deformation, the residual stress, and the like.
- ABS negative pressure suction unit 8 In the above description, as the negative pressure suction unit 8, a configuration in which a negative pressure is generated in the first support portion S1, the second support portion S2, and the third support portion S3 to suck and hold the wafer W is illustrated. Further, when the control unit 9 switches to the second support mode (middle position), the control unit 9 generates a negative pressure in the second support portion S2 to suck and hold the wafer W, and switches to the third support mode (lower position). At that time, a flow in which a negative pressure is generated in the third support portion S3 to suck and hold the wafer W is illustrated.
- the location and area for negative pressure suction can be increased. .. Therefore, even if the pressure for sucking and holding the wafer W is set low, the holding force can be increased as a whole, and even if an external force is applied during holding, the wafer W is less likely to come off, which is preferable.
- the negative pressure suction unit 8 is not limited to such a configuration, and the present invention can be embodied even with other configurations.
- the arc-shaped contact support portion 43 may be made of a porous material, or a groove or pore may be provided on the upper surface of the arc-shaped contact support portion 43 so that air can communicate with the third contact support portion 43. It may be connected to the negative pressure generating means in the same manner as the unit 41. By doing so, the location and area of negative pressure suction can be further increased. Therefore, even if the pressure for sucking and holding the wafer W is set low, the holding force can be increased as a whole, and even if an external force is applied during holding, the wafer W is less likely to come off, which is more preferable.
- a configuration in which a negative pressure is generated only in the first support portion S1 or a configuration in which a negative pressure is generated in the first support portion S1 and the second support portion S2 may be used. Even with such a configuration, since the negative pressure suction force acts on the contact allowable region R set in the lower outer peripheral portion Wb of the wafer W, the wafer W can be reliably held in a desired posture.
- the support 32 of the second support 3 is longer than the support 22 of the first support 2, and the connecting member 23 of the first support 2 is above the connecting member 33 of the second support 3.
- the configuration arranged in is illustrated.
- the first support portion 2 and the second support portion 3 are not limited to such a configuration, and the present invention can be embodied even with other configurations.
- the connecting member 23 of the first support portion 2 is arranged below the connecting member 33 of the second support portion 3, and the strut 22 of the first support portion 2 is longer than the strut 32 of the second support portion 3. Is also good.
- the length of the support column 22 of the first support portion 2 is set in consideration of the clearance so that the connecting member 23 and the connecting member 33 do not interfere with each other due to the change between the upper position and the middle position.
- the first elevating part 5 and the second elevating part 6 are independently attached to the device frame 1f, and the first elevating part 5 and the second elevating part 6 are each provided with a motor. Illustrated. Such a configuration is preferable because the rotation angle, rotation speed, and the like of the motor can be controlled to finely control the position and moving speed of the upper ends of the first support portion 2 and the second support portion 3.
- the first elevating part 5 and the second elevating part 6 are not limited to such a configuration, and the present invention can be embodied even with other configurations.
- the first elevating part 5 may be attached to the connecting member 33 of the second support part 3 (so-called two-stage stacking structure).
- the first elevating part 5 and the second elevating part 6 may be an elevating mechanism by rotation of a motor, or an actuator such as an air cylinder may be used.
- the configuration in which the first support portion 2 is moved up and down in the thickness direction (Z direction) of the wafer W is illustrated as the first elevating part 5, and the second support portion 3 is used as the second elevating part 6 as the wafer W.
- the configuration in which the wafer is moved up and down in the thickness direction (Z direction) is illustrated. With such a configuration, the wafer W is lowered from the upper position H to the middle position M, and the wafer W is lowered from the middle position M to the lower position L, so that the center of gravity at the lower position can be lowered downward. Further, since the unit having a relatively small number of parts and a light weight is moved up and down, the actuators of the first elevating part 6 and the second elevating part 7 can be miniaturized. Therefore, it is preferable to incorporate the wafer holding device 1 into an inspection device, a process device, or the like for operation.
- the first elevating part 5 and the second elevating part 6 are not limited to such a configuration, and may have a configuration as described below.
- the first support portion 3 is fixed, the second support portion 3 is moved up and down by the first elevating part 5, and the third support part 4 is moved up and down by the second elevating part 6 (so-called so-called). It may be a raised structure).
- the state in which the second support portion 3 and the third support portion 4 are lowered and the upper end of the first support portion 3 is at the uppermost position is defined as the upper position H.
- the second support portion 3 is raised so that the upper ends of the first support portion 3 and the second support portion 4 are above the upper end of the third support portion 4. Is defined as the middle position.
- a state in which the second support portion 3 and the third support portion 4 are raised and the upper ends of the first support portion 3, the second support portion 4, and the third support portion 4 are at the same height is defined as the lower position.
- the first elevating part 5 a configuration in which the connecting member 23 of the first support part 2 is moved up and down in the vertical direction by one actuator is illustrated. With such a configuration, a plurality of sets of the first contact support portion 21 and the support column 22 can be integrally raised and lowered.
- the first elevating portion 5 is not limited to such a configuration, and may have a configuration in which a plurality of sets of the first contact support portion 21 and the support column 22 are independently raised and lowered. In the case of this configuration, it is not necessary to provide the connecting member 23 in the first support portion 2, and the design can be performed without worrying about the interference of the second support portion 3 with the connecting member 33.
- the second elevating part 6 a configuration in which the connecting member 33 of the second support part 3 is moved up and down in the vertical direction by one actuator is illustrated. With such a configuration, a plurality of sets of second contact support portions 31 and columns 32 can be integrally raised and lowered.
- the second elevating part 6 is not limited to such a configuration, and may have a configuration in which a plurality of sets of the second contact support portion 31 and the support column 32 are independently raised and lowered. In the case of this configuration, it is not necessary to provide the connecting member 33 in the second support portion 3, and the design can be performed without worrying about the interference of the first support portion 2 with the connecting member 23.
- the first support unit 2, the second support unit 3, and the third support unit 4 are provided, and the control unit 9 switches from the first support mode to the second support mode and then switches to the third support mode. Illustrated. However, in applying the present invention, a plurality of support portions and elevating portions that change the relative heights of the upper ends thereof are provided at a finer pitch, and the control unit supports the wafer while increasing the number of support points in more stages. It may be configured to be made to.
- the mode in which the height of supporting and holding the wafer W is changed while increasing the number of supporting points in such a multi-step of three or more steps is called a "first ascending / descending mode".
- the control unit 9 of the wafer holding device 1 has, in addition to the first elevating mode, a "second elevating mode" described in detail below, which is referred to as the first elevating mode. It may be in the form of selecting and executing any of the second ascending / descending modes.
- FIG. 6 is a perspective view showing an example of a wafer holding device in another embodiment of the present invention.
- FIG. 6 shows a state in which the connecting portion 33 and the like of the second support portion 3 attached at the positions indicated by the broken lines are removed.
- the wafer holding device 1 has a structure in which the second support portion 3 is detachable, and the control unit 9 is in either the first elevating mode or the second elevating mode depending on the mounting state of the second support portion 3. Select and execute. More specifically, the control unit 9 executes the first elevating mode when the second support unit 3 is attached, and performs the second elevating mode when the second support unit 3 is removed.
- the second elevating mode to be executed has a fourth support mode and a fifth support mode, and switches from the fourth support mode to the fifth support mode while sucking and holding the wafer W received in the fourth support mode. Is.
- the upper end of the first support portion 2 is arranged above the height of the upper end of the third support portion 4. Specifically, in the fourth support mode, the height of the upper end of the first contact holding portion 21 is higher than the height of the upper end of the third contact holding portion 41 (that is, the lower position).
- the actuator of the first elevating part 5 is controlled so as to be arranged in H, and the height for supporting and holding the wafer W is changed.
- the height of the upper end of the first support portion 2 is arranged at the same height as the height of the upper end of the third support portion 4.
- the height of the upper end of the first contact holding portion 21 is arranged at the same height as the height of the upper end of the third contact holding portion 41 (that is, the lower position).
- the height of supporting and holding the wafer W is changed by controlling the actuator of the first elevating unit 5.
- FIG. 7 is a cross-sectional view showing an example of a wafer holding device in another embodiment embodying the present invention.
- FIG. 7A shows how the wafer W is supported at the upper position H in the second ascending / descending mode.
- FIG. 7B shows how the wafer W is supported at the lower position L in the second ascending / descending mode.
- the operator when switching to the second ascending / descending mode, the operator removes the second contact supporting portion 31 or the connecting portion 33 of the second supporting portion 3 from the rod 61 of the second elevating portion 6 to the control unit 9.
- an operation for executing the second ascending / descending mode (for example, a switch operation) is performed.
- the operator when switching to the first elevating mode, the operator attaches the second contact support portion 31 or the connecting portion 33 of the second support portion 3 to the rod 61 of the second elevating portion 6 with respect to the control unit 9.
- An operation for example, a switch operation for executing the first ascending / descending mode is performed.
- the operator may automatically switch between the first elevating mode and the second elevating mode while attaching and detaching the connecting portion 33 of the second support portion 3. .
- the wafer holding device 1 has a structure in which the second support portion 3 can be attached and detached, includes a presence detection unit 7, and has a configuration in which the second support portion can be removed.
- the presence detection unit 7 detects the mounting state of the second support unit 3. Specifically, the presence detection unit 7 detects whether or not the second contact portion 31 of the second support portion 3 and the connecting portion 33 to which the support column 32 is attached are attached at a predetermined position. Is. More specifically, the presence detection unit 7 is composed of an identification mark 71, an image pickup camera 72, an image processing device 73, and the like, as shown by the broken lines in FIGS. It is connected.
- the identification mark 71 is for determining whether or not the second support portion 3 is attached at a predetermined position. Specifically, the identification mark 71 is attached to the connecting portion 33 of the second support portion 3. More specifically, the identification mark 71 can be exemplified by a two-dimensional code, a predetermined pattern (may be an marking or an engraved one), or the like.
- the image pickup camera 72 captures the identification mark 71 and outputs the captured image to the outside.
- the image processing device 73 processes the image captured by the image pickup camera 72 and determines whether or not the identification mark 71 is included in the image.
- the presence detection unit 7 Since the presence detection unit 7 has such a configuration, if the identification mark 71 is detected, it is determined that the second support unit 3 is attached. On the other hand, if the identification mark 71 is not detected, it is determined that the second support portion 3 has been removed.
- control unit 9 is configured to select and execute either the first elevating mode or the second elevating mode according to the mounting state of the second support unit 3 detected by the presence detection unit 7. Specifically, if the control unit 9 determines that the second support unit 3 is attached to the presence detection unit 7, the control unit 9 executes the first ascending / descending mode, and the presence detection unit 7 executes the second support unit 3 If it is determined that is removed, the second ascending / descending mode is executed.
- FIG. 8 is a flow chart showing an example of an operation flow in another embodiment embodying the present invention.
- the operator attaches or removes the connecting portion 33 of the second support portion 3, and confirms the attached state (step s10). Then, if the second support unit 3 is attached, the control unit 9 executes the above-mentioned first elevating mode (steps s1 to s5). On the other hand, if the second support unit 3 is removed, the control unit 9 executes the second elevating mode (steps s21 to s24) shown below.
- the wafer holding device 1 switches the control unit 9 to the fourth support mode (upper position) and stands by (step s21).
- the wafer W is placed (step s22), and the first support portion S1 of the wafer W is sucked and held (step s23).
- the first elevating part 5 is controlled to switch to the fifth support mode (lower position) (step s24).
- the fourth support mode (upper stage position) When switching from the fourth support mode (upper stage position) to the fifth support mode (lower stage position L), a negative pressure is generated in the third support portion S3 to suck and hold the wafer W.
- step s6 a desired process, inspection, etc. is executed (step s6), and it is determined whether or not the process, etc. is completed (step s7). Then, if the processing or the like is not completed, the above-mentioned step s6 is continued, and if the processing or the like is completed, the series of flows is terminated.
- the first ascending / descending mode when holding a wafer that is prone to warping or deformation, the first ascending / descending mode can be executed to reliably hold the wafer. Further, when holding a wafer that has not been warped or deformed, the second ascending / descending mode can be executed to quickly hold the wafer, which is preferable because the number of wafers processed per unit time can be increased.
- step s10 the configuration in which the operator discriminates (manually discriminates) the mounting state of the second support portion 3 is illustrated.
- the wafer holding device 1 uses the presence detection unit 7 to image the identification mark 71 with the image pickup camera 72, and the image processing device 73 determines the presence or absence of the identification mark 71 to determine the presence or absence of the identification mark 71.
- the configuration may be such that the mounting state of 3 is discriminated (automatically discriminated).
- the presence detection unit 7 is provided with the identification mark 71, the image pickup camera 72, and the image processing device 73, and the configuration in which the mounting state of the second support unit 3 is determined by the presence or absence of the identification mark 71 is illustrated.
- the presence detection unit 7 is not limited to such a configuration, and may have a configuration in which the detachable body of the connecting portion 33 is detected by a sensor or the like and the ON / OFF signal is switched and output according to the detached state. good.
- the third ascending / descending mode has a sixth support mode and a seventh support mode, and switches from the sixth support mode to the seventh support mode while sucking and holding the wafer W received in the sixth support mode. ..
- the third elevating mode is executed in a state where the second support portion 3 is attached (as shown in FIG. 2), similarly to the first elevating mode.
- the upper end of the first support portion is arranged above the heights of the upper end of the second support portion 3 and the upper end of the third support portion 4.
- the height of the upper end of the second contact holding portion 31 and the height of the upper end of the third contact holding portion 41 are arranged at the same height (that is, the lower position L).
- the height that supports and holds the wafer W by controlling the actuator of the first elevating part 5 so that the height of the upper end of the first contact holding part 21 is arranged at the upper position H above these. Change the height.
- the height of the upper end of the first support portion 3 is arranged at the same height as the height of the upper end of the second support portion 4 and the upper end of the third support portion 4 (that is, the lower position L).
- the height of the upper end of the first contact holding portion 21 is the same as the height of the upper end of the second contact holding portion 31 and the upper end of the third contact holding portion 41. (That is, the height at which the wafer W is supported and held is changed by controlling the actuator of the first elevating unit 5 so that the wafer W is arranged at the lower position L).
- FIG. 9 is a cross-sectional view showing an example of a wafer holding device in still another embodiment embodying the present invention.
- FIG. 9A shows how the wafer W is supported at the upper position H in the third ascending / descending mode.
- FIG. 9B shows how the wafer W is supported at the lower position L in the third ascending / descending mode.
- FIG. 10 is a flow chart showing an example of an operation flow in still another embodiment embodying the present invention.
- the operator selects whether to raise or lower the wafer W in the first elevating mode or the third elevating mode in the state where the connecting portion 33 of the second support portion 3 is attached (step s15). Then, the control unit 9 determines which elevating mode is selected (step s16), and if the first elevating mode is selected, executes steps s1 to s5 in the same manner as described above. On the other hand, if the third ascending / descending mode is selected, the third ascending / descending mode (steps s31 to s34) shown below is executed.
- the wafer holding device 1 switches the control unit 9 to the sixth support mode (upper position) and stands by (step s31).
- step s32 the wafer W is placed (step s32), and the first support portion S1 of the wafer W is sucked and held (step s33).
- the first elevating part 5 is controlled to switch to the seventh support mode (lower position) (step s34).
- the sixth support mode upper stage position
- the seventh support mode lower stage position
- a negative pressure is generated in the second support portion S2 and the third support portion S3 to suck and hold the wafer W.
- step s6 a desired process, inspection, etc. is executed (step s6), and it is determined whether or not the process, etc. is completed (step s7). Then, if the processing or the like is not completed, the above-mentioned step s6 is continued, and if the processing or the like is completed, the series of flows is terminated.
- the first ascending / descending mode when holding a wafer that is prone to warping or deformation, the first ascending / descending mode can be executed to reliably hold the wafer. Further, when holding a wafer that has not been warped or deformed, the third ascending / descending mode can be executed to quickly hold the wafer, which is preferable because the number of wafers processed per unit time can be increased.
- step s15 the operator selects whether to raise or lower the wafer W in the first elevating mode or the third elevating mode, and in step s16, it is determined which elevating mode is selected.
- the configuration to be used is illustrated. However, whether to execute the first elevating mode or the third execution mode may be selected by the operation of the operator or the like, but the type information of the wafer W to be handled (so-called recipe file, etc.) ),
- the control unit 9 receives the recipe information in step s15, and the elevating mode may be determined in step s16.
- the operator may decide whether to use the first elevating mode or the third elevating mode depending on the type of wafer W to be held (that is, whether or not it is easily deformed), or the recipe file registered in advance may be used. It may be configured to automatically switch based on the above.
- control unit 9 is configured to automatically switch the elevating mode, it is preferable because the operator can save the trouble of attaching and detaching the second support unit 3. Further, it is more preferable because it is possible to prevent the operator from making a mistake in setting the elevating mode.
- the configuration in which the second support portion 3 is fixed at the lower position L has been illustrated, but the configuration is not limited to this, and the first support portion 2 and the second support portion 3 are moved up and down in conjunction with each other.
- the first contact holding portion 21 and the third contact holding portion 41 may both be switched to the upper position H / lower position L.
- the control unit 9 exemplifies a configuration having a first elevating mode and a second elevating mode or a third elevating mode, but has a first elevating mode, a second elevating mode, and a third elevating mode.
- the second ascending / descending mode is executed by the setup change or operation by the operator, the third ascending / descending mode is executed by the operator's operation, and the third ascending / descending mode is automatically executed based on the wafer W type information. It may be configured to be used. Specifically, in step s11 of the operation flow shown in FIG. 8, a configuration in which the operation flow (step s15 or later) shown in FIG. 10 is executed after determining that the second support portion 3 is attached is exemplified. can.
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Abstract
The present invention provides a wafer holding device that, when holding a wafer that is readily warped or deformed, is capable of holding at a desired attitude in a sure manner, even in cases in which contact with only a portion of an outer perimeter lower portion of the wafer is permitted. Specifically, a wafer holding device that receives a wafer in a horizontal state and holds the wafer at a predetermined attitude is characterized by including: a first supporting unit that supports, out of contact-permitted regions set on an outer perimeter lower portion of the wafer, a first supported part from below; a second supporting unit that supports a second supported part from below; a third supporting unit that supports a third supported part; a first lift unit; a second lift unit; a negative pressure suctioning unit; and a control unit. The control unit has at least a first supporting mode, a second supporting mode, and a third supporting mode, and in a state of holding by suctioning the wafer received in the first supporting mode, switches from the first supporting mode to the second supporting mode, and thereafter switches to the third supporting mode.
Description
本発明は、ハンドラー等で運ばれたウエーハ(略円形の薄板)を水平状態で受け取り、所定の姿勢で保持するウエーハ保持装置に関する。例えば、当該ウエーハ保持装置は、ウエーハを加工・処理等する処理装置や、ウエーハ上に形成されたデバイスチップの外観を撮像して検査する外観検査装置等に組み込んで用いられる。
The present invention relates to a wafer holding device that receives a wafer (a substantially circular thin plate) carried by a handler or the like in a horizontal state and holds it in a predetermined posture. For example, the wafer holding device is used by being incorporated in a processing device for processing and processing a wafer, an appearance inspection device for imaging and inspecting the appearance of a device chip formed on the wafer, and the like.
半導体デバイスは、1枚の半導体ウエーハ上に多数の半導体デバイス回路(つまり、デバイスチップの繰り返し外観パターン)が層状に重なり合って形成された後、個々のチップ部品に個片化され、当該チップ部品がパッケージングされて、電子部品として単体で出荷されたり電気製品に組み込まれたりする。
A semiconductor device is formed by stacking a large number of semiconductor device circuits (that is, repeated appearance patterns of device chips) on one semiconductor wafer in layers, and then individualized into individual chip components, and the chip components are separated into individual chip components. It is packaged and shipped alone as an electronic component or incorporated into an electrical product.
そして、個々のチップ部品が個片化される前に、ウエーハ上に形成されたデバイスチップの繰り返し外観パターンを撮像した検査画像と基準画像とを比較して、各チップ部品の良否等に関する検査が行われる(例えば、特許文献1)。
Then, before each chip component is individualized, the inspection image obtained by capturing the repeated appearance pattern of the device chip formed on the wafer is compared with the reference image, and the inspection regarding the quality of each chip component is performed. It is performed (for example, Patent Document 1).
そして、検査対象となるウエーハは、ハンドラーと呼ばれる自動搬送装置によりカセットキャリア等から外観検査装置へと運ばれ、検査済み基板の払い出しや未検査基板の受け渡しが行われる。
Then, the wafer to be inspected is carried from the cassette carrier or the like to the visual inspection device by an automatic transfer device called a handler, and the inspected substrate is paid out and the uninspected substrate is delivered.
一般的に、外観検査装置で検査等するウエーハは、上面が平坦なウエーハ保持台で下面側から全面支持されて吸引保持等するなどして、撮像・検査等が行われていた(例えば、特許文献2)。
In general, a wafer to be inspected by a visual inspection device is imaged and inspected by being supported by a wafer holding table having a flat upper surface and being sucked and held (for example, a patent). Document 2).
しかし、保持対象となるウエーハの上下面に、配線パターン等の成膜が形成された機能領域がある場合、ウエーハの下面全体を平坦なウエーハ保持台で支持することが禁止される。また、ウエーハの上面側から、押さえ部材を接触させる姿勢矯正や、エアブロー等による加圧・姿勢矯正等が、禁止されていることもある。
However, if there is a functional area on the upper and lower surfaces of the wafer to be held where a film formation such as a wiring pattern is formed, it is prohibited to support the entire lower surface of the wafer with a flat wafer holding base. In addition, posture correction in which the pressing member is brought into contact with the wafer from the upper surface side of the wafer, pressurization / posture correction by air blow, etc. may be prohibited.
さらに、検査対象のウエーハが薄板であったり残留応力があったりすると、ウエーハの外周を平坦な姿勢で保持しようとしても、反りや変形が生じやすいため、ウエーハ外周の一部が浮いた状態となり、所望の姿勢で保持できないことがあった。
Furthermore, if the wafer to be inspected is a thin plate or has residual stress, even if the outer circumference of the wafer is held in a flat posture, warpage or deformation is likely to occur, so that a part of the outer circumference of the wafer floats. Sometimes it could not be held in the desired posture.
そこで本発明は、上記の問題点に鑑みてなされたものであり、
反りや変形を生じ易いウエーハを保持する際に、当該ウエーハの外周下部の一部しか接触が許されていない場合であっても、所望の姿勢で確実に保持することができるウエーハ保持装置を提供することを目的とする。 Therefore, the present invention has been made in view of the above problems.
Provided is a wafer holding device capable of reliably holding a wafer in a desired posture even when only a part of the lower part of the outer circumference of the wafer is allowed to come into contact with the wafer, which is easily warped or deformed. The purpose is to do.
反りや変形を生じ易いウエーハを保持する際に、当該ウエーハの外周下部の一部しか接触が許されていない場合であっても、所望の姿勢で確実に保持することができるウエーハ保持装置を提供することを目的とする。 Therefore, the present invention has been made in view of the above problems.
Provided is a wafer holding device capable of reliably holding a wafer in a desired posture even when only a part of the lower part of the outer circumference of the wafer is allowed to come into contact with the wafer, which is easily warped or deformed. The purpose is to do.
以上の課題を解決するために、本発明に係る一態様は、
ウエーハを水平状態で受け取り、所定の姿勢で保持するウエーハ保持装置であって、
ウエーハの外周下部に設定された接触許容領域のうち、当該ウエーハの中心を取り囲むように少なくとも3ヶ所に振り分けて設定された第1支持部位を、下方から支える第1支持部と、
接触許容領域のうち、第1支持部の間を補う位置に設定された第2支持部位を、下方から支える第2支持部と、
接触許容領域のうち、第1支持部および第2支持部の間を補う位置に設定された第3支持部位を、下方から支える第3支持部と、
第1支持部の上端と第2支持部の上端との相対高さを変更する第1昇降部と、
第2支持部の上端と第3支持部の上端との相対高さを変更する第2昇降部と、
第1支持部位に負圧を生じさせてウエーハを吸引保持する負圧吸引部と、
第1昇降部および第2昇降部における相対高さの変更と、負圧吸引部による吸引保持または解除の切替を制御する制御部を備え、
制御部は、
第2支持部の上端および第3支持部の上端の高さよりも上方に第1支持部の上端を配置させる、第1支持モードと、
第3支持部の上端の高さよりも上方で、第1支持部の上端と第2支持部の上端とを同じ高さに配置させる、第2支持モードと、
第1支持部の上端および第2支持部の上端の高さを、第3支持部の上端の高さと同じ高さに配置させる、第3支持モードとを少なくとも有し、
前記第1支持モードにて受け取った前記ウエーハを吸引保持したまま、当該第1支持モードから前記第2支持モードに切り替えた後、前記第3支持モードに切り替えることを特徴とする。 In order to solve the above problems, one aspect of the present invention is
A wafer holding device that receives a wafer in a horizontal position and holds it in a predetermined posture.
Of the contact allowable area set in the lower part of the outer circumference of the wafer, the first support portion that supports the first support portion that is divided and set in at least three places so as to surround the center of the wafer is supported from below.
In the contact allowable area, the second support portion that supports the second support portion set at a position that supplements between the first support portions from below, and the second support portion.
Of the contact allowable area, the third support portion that supports the third support portion set at a position that complements between the first support portion and the second support portion from below, and the third support portion.
A first elevating part that changes the relative height between the upper end of the first support part and the upper end of the second support part,
A second elevating part that changes the relative height between the upper end of the second support part and the upper end of the third support part,
A negative pressure suction part that creates a negative pressure in the first support part and sucks and holds the wafer,
It is provided with a control unit that controls the change of the relative height in the first elevating part and the second elevating part and the switching of suction holding or release by the negative pressure suction part.
The control unit
A first support mode in which the upper end of the first support portion is arranged above the heights of the upper end of the second support portion and the upper end of the third support portion.
A second support mode in which the upper end of the first support portion and the upper end of the second support portion are arranged at the same height above the height of the upper end of the third support portion.
It has at least a third support mode in which the heights of the upper ends of the first support and the upper ends of the second support are arranged at the same height as the height of the upper ends of the third support.
While sucking and holding the wafer received in the first support mode, the wafer is switched from the first support mode to the second support mode and then switched to the third support mode.
ウエーハを水平状態で受け取り、所定の姿勢で保持するウエーハ保持装置であって、
ウエーハの外周下部に設定された接触許容領域のうち、当該ウエーハの中心を取り囲むように少なくとも3ヶ所に振り分けて設定された第1支持部位を、下方から支える第1支持部と、
接触許容領域のうち、第1支持部の間を補う位置に設定された第2支持部位を、下方から支える第2支持部と、
接触許容領域のうち、第1支持部および第2支持部の間を補う位置に設定された第3支持部位を、下方から支える第3支持部と、
第1支持部の上端と第2支持部の上端との相対高さを変更する第1昇降部と、
第2支持部の上端と第3支持部の上端との相対高さを変更する第2昇降部と、
第1支持部位に負圧を生じさせてウエーハを吸引保持する負圧吸引部と、
第1昇降部および第2昇降部における相対高さの変更と、負圧吸引部による吸引保持または解除の切替を制御する制御部を備え、
制御部は、
第2支持部の上端および第3支持部の上端の高さよりも上方に第1支持部の上端を配置させる、第1支持モードと、
第3支持部の上端の高さよりも上方で、第1支持部の上端と第2支持部の上端とを同じ高さに配置させる、第2支持モードと、
第1支持部の上端および第2支持部の上端の高さを、第3支持部の上端の高さと同じ高さに配置させる、第3支持モードとを少なくとも有し、
前記第1支持モードにて受け取った前記ウエーハを吸引保持したまま、当該第1支持モードから前記第2支持モードに切り替えた後、前記第3支持モードに切り替えることを特徴とする。 In order to solve the above problems, one aspect of the present invention is
A wafer holding device that receives a wafer in a horizontal position and holds it in a predetermined posture.
Of the contact allowable area set in the lower part of the outer circumference of the wafer, the first support portion that supports the first support portion that is divided and set in at least three places so as to surround the center of the wafer is supported from below.
In the contact allowable area, the second support portion that supports the second support portion set at a position that supplements between the first support portions from below, and the second support portion.
Of the contact allowable area, the third support portion that supports the third support portion set at a position that complements between the first support portion and the second support portion from below, and the third support portion.
A first elevating part that changes the relative height between the upper end of the first support part and the upper end of the second support part,
A second elevating part that changes the relative height between the upper end of the second support part and the upper end of the third support part,
A negative pressure suction part that creates a negative pressure in the first support part and sucks and holds the wafer,
It is provided with a control unit that controls the change of the relative height in the first elevating part and the second elevating part and the switching of suction holding or release by the negative pressure suction part.
The control unit
A first support mode in which the upper end of the first support portion is arranged above the heights of the upper end of the second support portion and the upper end of the third support portion.
A second support mode in which the upper end of the first support portion and the upper end of the second support portion are arranged at the same height above the height of the upper end of the third support portion.
It has at least a third support mode in which the heights of the upper ends of the first support and the upper ends of the second support are arranged at the same height as the height of the upper ends of the third support.
While sucking and holding the wafer received in the first support mode, the wafer is switched from the first support mode to the second support mode and then switched to the third support mode.
上記態様によれば、ウエーハを支持する箇所や面積を段階的に増やすことができるので、反りや変形を生じ易いウエーハであっても、部分的な外周部の浮き上がりを防ぎつつ、所望の姿勢で外周部を保持することができる。
According to the above aspect, since the location and area for supporting the wafer can be increased stepwise, even if the wafer is liable to warp or deform, it is possible to prevent the outer peripheral portion from being partially lifted and in a desired posture. The outer peripheral portion can be held.
反りや変形を生じ易いウエーハを保持する際に、当該ウエーハの外周下部の一部しか接触が許されていない場合であっても、所望の姿勢で確実に保持することができる。
When holding a wafer that is prone to warping or deformation, even if only a part of the lower part of the outer circumference of the wafer is allowed to come into contact, it can be reliably held in a desired posture.
以下に、本発明を実施するための形態について、図を用いながら説明する。なお、以下の説明では、直交座標系の3軸をX、Y、Zとし、水平方向をX方向、Y方向と表現し、XY平面に垂直な方向(つまり、重力方向)をZ方向と表現する。また、Z方向は、重力に逆らう方向を上、重力がはたらく方向を下と表現する。
Hereinafter, a mode for carrying out the present invention will be described with reference to the drawings. In the following description, the three axes of the Cartesian coordinate system are expressed as X, Y, and Z, the horizontal direction is expressed as the X direction and the Y direction, and the direction perpendicular to the XY plane (that is, the gravity direction) is expressed as the Z direction. do. Further, in the Z direction, the direction against gravity is expressed as the upper direction, and the direction in which gravity acts is expressed as the lower direction.
図1は、本発明を具現化する形態におけるウエーハ保持装置の一例を示す斜視図である。図2は、本発明を具現化する形態におけるウエーハ保持装置の一例を示す平面図である。図1,2には、本発明に係るウエーハ保持装置1を構成する各部とその配置例が示されている。図3は、本発明を具現化する形態におけるウエーハ保持装置の一例を示すブロック図である。図3には、本発明に係るウエーハ保持装置1を構成する各部と制御部との関わりが例示されている。
FIG. 1 is a perspective view showing an example of a wafer holding device in a form embodying the present invention. FIG. 2 is a plan view showing an example of a wafer holding device in a form embodying the present invention. FIGS. 1 and 2 show each part constituting the wafer holding device 1 according to the present invention and an example of its arrangement. FIG. 3 is a block diagram showing an example of a wafer holding device in a form embodying the present invention. FIG. 3 illustrates the relationship between each unit constituting the wafer holding device 1 according to the present invention and the control unit.
ウエーハ保持装置1は、不図示のハンドラー等で運ばれたウエーハWを水平状態で受け取り、所定の姿勢で保持するものである。保持対象となるウエーハWは、回路パターンが形成されている領域や機能性の成膜が施されている領域(概ね外縁とその周辺一部より内側部分)は、汚れや異物等の付着やキズや凹み等が生じることを避けるため、接触が許されていない。一方、これら領域より外側(外縁とその周辺一部)については、接触許容領域Rと呼ばれ、ハンドリング等のために接触が許されている。
具体的には、ウエーハ保持装置1は、第1支持部2、第2支持部3、第3支持部4、第1昇降部5、第2昇降部6、負圧吸引部8、制御部9等を備えている。 Thewafer holding device 1 receives the wafer W carried by a handler (not shown) or the like in a horizontal state and holds the wafer W in a predetermined posture. In the wafer W to be retained, the area where the circuit pattern is formed and the area where the functional film is formed (generally the outer edge and the inner part from the peripheral part) are adhered to dirt, foreign matter, etc. and scratches. Contact is not allowed to avoid dents and the like. On the other hand, the area outside these areas (the outer edge and a part around the outer edge) is called a contact allowable area R, and contact is permitted for handling and the like.
Specifically, thewafer holding device 1 includes a first support portion 2, a second support portion 3, a third support portion 4, a first elevating portion 5, a second elevating portion 6, a negative pressure suction unit 8, and a control unit 9. Etc. are provided.
具体的には、ウエーハ保持装置1は、第1支持部2、第2支持部3、第3支持部4、第1昇降部5、第2昇降部6、負圧吸引部8、制御部9等を備えている。 The
Specifically, the
第1支持部2は、ウエーハWの外周下部Wbに設定された接触許容領域Rのうち、当該ウエーハWの中心Wcを取り囲むように少なくとも3ヶ所に振り分けて設定された第1支持部位S1を、下方から支えるものである。具体的には、第1支持部2は、第1当接支持部21、支柱22、連結部23等を備えている。
The first support portion 2 is formed by allocating the first support portion S1 set to at least three places in the contact allowable region R set in the lower outer peripheral portion Wb of the wafer W so as to surround the center Wc of the wafer W. It supports from below. Specifically, the first support portion 2 includes a first contact support portion 21, a support column 22, a connecting portion 23, and the like.
第1当接支持部21は、ウエーハWの外周下部Wbの第1支持部位S1と当接し、第1支持部位S1を下方から支え保持するものである。
具体的には、平面視してウエーハWの中心Wcを基準にすると、第1支持部位S1は、約120度間隔で振り分けた3ヶ所に設定されており、これら部位S1と位置が対応する様に第1当接支持部21が3ヶ所に配置されている。
より具体的には、第1当接支持部21は、第1支持部2の上端に配置されて、本体が金属や樹脂、ゴム等で構成されており、上端とエアが連通するエア連通口を備えた構造(例えば筒状)をしている。 The firstcontact support portion 21 contacts the first support portion S1 of the lower outer peripheral portion Wb of the wafer W, and supports and holds the first support portion S1 from below.
Specifically, when the center Wc of the wafer W is used as a reference in a plan view, the first support portion S1 is set at three locations distributed at intervals of about 120 degrees, and the positions correspond to these portions S1. The firstcontact support portions 21 are arranged at three locations.
More specifically, the firstcontact support portion 21 is arranged at the upper end of the first support portion 2, and the main body is made of metal, resin, rubber, or the like, and the air communication port through which the upper end and air communicate with each other. It has a structure (for example, a tubular shape).
具体的には、平面視してウエーハWの中心Wcを基準にすると、第1支持部位S1は、約120度間隔で振り分けた3ヶ所に設定されており、これら部位S1と位置が対応する様に第1当接支持部21が3ヶ所に配置されている。
より具体的には、第1当接支持部21は、第1支持部2の上端に配置されて、本体が金属や樹脂、ゴム等で構成されており、上端とエアが連通するエア連通口を備えた構造(例えば筒状)をしている。 The first
Specifically, when the center Wc of the wafer W is used as a reference in a plan view, the first support portion S1 is set at three locations distributed at intervals of about 120 degrees, and the positions correspond to these portions S1. The first
More specifically, the first
支柱22は、第1当接支持部21の上端位置を所定の高さに揃えるものである。具体的には、支柱22は、ウエーハWの厚み方向(Z方向)に所定の長さを有する棒状部材で構成されている。
The support column 22 aligns the upper end position of the first contact support portion 21 with a predetermined height. Specifically, the support column 22 is composed of a rod-shaped member having a predetermined length in the thickness direction (Z direction) of the wafer W.
連結部23は、支柱22の下部をそれぞれ固定しつつ、第1昇降部5と連結するものである。具体的には、連結部23は、平面視すると略Y字状をしており、中央付近から放射状に伸びた様な形の板状部材で構成されている。
The connecting portion 23 is connected to the first elevating portion 5 while fixing the lower parts of the columns 22 respectively. Specifically, the connecting portion 23 has a substantially Y-shape when viewed in a plan view, and is composed of a plate-shaped member having a shape extending radially from the vicinity of the center.
第2支持部3は、ウエーハWの外周下部Wbに設定された接触許容領域Rのうち、第1支持部位S1の間を補う位置に設定された第2支持部位S2を、下方から支えるものである。具体的には、第2支持部3は、第2当接支持部31、支柱32、連結部33等を備えている。
The second support portion 3 supports the second support portion S2 set at a position that supplements the space between the first support portions S1 in the contact allowable region R set in the lower outer peripheral portion Wb of the wafer W from below. be. Specifically, the second support portion 3 includes a second contact support portion 31, a support column 32, a connecting portion 33, and the like.
第2当接支持部31は、ウエーハWの外周下部Wbの第1支持部位S1の間を補う位置に設定された第2支持部位S2と当接し、第2支持部位S2を下方から支えるものである。
具体的には、平面視してウエーハWの中心Wcを基準にすると、第2支持部位S2は、第1支持部位S1に対して約60度ずれた位置に振り分けた3ヶ所に設定されており、これら部位S2と位置が対応する様に第2当接支持部31が配置されている。
より具体的には、第2当接支持部31は、第2支持部3の上端に配置されて、本体が金属や樹脂、ゴム等で構成されており、上端とエアが連通するエア連通口を備えた構造(例えば筒状)をしている。 The second contact support portion 31 contacts the second support portion S2 set at a position to supplement the space between the first support portions S1 of the lower outer peripheral portion Wb of the wafer W, and supports the second support portion S2 from below. be.
Specifically, when the center Wc of the wafer W is used as a reference in a plan view, the second support portion S2 is set at three locations distributed at positions displaced by about 60 degrees from the first support portion S1. The second contact support portion 31 is arranged so that the position corresponds to these portions S2.
More specifically, the second contact support portion 31 is arranged at the upper end of thesecond support portion 3, and the main body is made of metal, resin, rubber, or the like, and the air communication port through which the upper end and air communicate with each other. It has a structure (for example, a tubular shape).
具体的には、平面視してウエーハWの中心Wcを基準にすると、第2支持部位S2は、第1支持部位S1に対して約60度ずれた位置に振り分けた3ヶ所に設定されており、これら部位S2と位置が対応する様に第2当接支持部31が配置されている。
より具体的には、第2当接支持部31は、第2支持部3の上端に配置されて、本体が金属や樹脂、ゴム等で構成されており、上端とエアが連通するエア連通口を備えた構造(例えば筒状)をしている。 The second contact support portion 31 contacts the second support portion S2 set at a position to supplement the space between the first support portions S1 of the lower outer peripheral portion Wb of the wafer W, and supports the second support portion S2 from below. be.
Specifically, when the center Wc of the wafer W is used as a reference in a plan view, the second support portion S2 is set at three locations distributed at positions displaced by about 60 degrees from the first support portion S1. The second contact support portion 31 is arranged so that the position corresponds to these portions S2.
More specifically, the second contact support portion 31 is arranged at the upper end of the
支柱32は、第2当接支持部31の上端位置を所定の高さに揃えるものである。具体的には、支柱32は、ウエーハWの厚み方向(Z方向)に所定の長さを有する棒状部材で構成されている。
The support column 32 aligns the upper end position of the second contact support portion 31 with a predetermined height. Specifically, the support column 32 is composed of a rod-shaped member having a predetermined length in the thickness direction (Z direction) of the wafer W.
連結部33は、支柱32の下部をそれぞれ固定しつつ、第2昇降部6と連結するものである。具体的には、連結部33は、平面視すると略Y字状をしており、中央付近から放射状に伸びた様な形の板状部材で構成されている。
The connecting portion 33 connects to the second elevating portion 6 while fixing the lower part of the support column 32, respectively. Specifically, the connecting portion 33 has a substantially Y-shape when viewed in a plan view, and is composed of a plate-shaped member having a shape extending radially from the vicinity of the center.
第3支持部4は、ウエーハWの外周下部Wbに設定された接触許容領域Rのうち、第1支持部位S1および第2支持部位S2の間を補う位置に設定された第3支持部位S3を、下方から支えるものである。具体的には、第3支持部4は、第3当接支持部41、支柱42、円弧状当接支持部43等を備えている。
The third support portion 4 has a third support portion S3 set at a position that supplements between the first support portion S1 and the second support portion S2 in the contact allowable region R set in the lower outer peripheral portion Wb of the wafer W. , Support from below. Specifically, the third support portion 4 includes a third contact support portion 41, a support column 42, an arc-shaped contact support portion 43, and the like.
第3当接支持部41は、ウエーハWの外周下部Wbの第1支持部位S1および第2支持部位S2の間を補う位置に設定された第3支持部位S3の少なくとも一部(円状の領域)と当接し、第3支持部位S3を下方から支えるものである。
具体的には、平面視してウエーハWの中心Wcを基準にすると、第3当接支持部41は、第1当接支持部21又は第2当接支持部31に対して約30度ずれた位置に振り分けた6ヶ所に配置されている。
より具体的には、第3当接支持部41は、第3支持部4の上端に配置されて、本体が金属や樹脂、ゴム等で構成されており、上端とエアが連通するエア連通口を備えた構造(例えば筒状)をしている。 The thirdcontact support portion 41 is at least a part (circular region) of the third support portion S3 set at a position to supplement between the first support portion S1 and the second support portion S2 of the lower outer peripheral portion Wb of the wafer W. ), And supports the third support portion S3 from below.
Specifically, when the center Wc of the wafer W is used as a reference in a plan view, the thirdcontact support portion 41 is displaced by about 30 degrees with respect to the first contact support portion 21 or the second contact support portion 31. It is arranged in 6 places distributed to the above positions.
More specifically, the thirdcontact support portion 41 is arranged at the upper end of the third support portion 4, and the main body is made of metal, resin, rubber, or the like, and the air communication port through which the upper end and air communicate with each other. It has a structure (for example, a tubular shape).
具体的には、平面視してウエーハWの中心Wcを基準にすると、第3当接支持部41は、第1当接支持部21又は第2当接支持部31に対して約30度ずれた位置に振り分けた6ヶ所に配置されている。
より具体的には、第3当接支持部41は、第3支持部4の上端に配置されて、本体が金属や樹脂、ゴム等で構成されており、上端とエアが連通するエア連通口を備えた構造(例えば筒状)をしている。 The third
Specifically, when the center Wc of the wafer W is used as a reference in a plan view, the third
More specifically, the third
支柱42は、第2当接支持部31の上端位置を所定の高さに揃えるものである。
具体的には、支柱42は、ウエーハWの厚み方向(Z方向)に所定の長さを有する棒状部材で構成されている。 Thesupport column 42 aligns the upper end position of the second contact support portion 31 with a predetermined height.
Specifically, thesupport column 42 is composed of a rod-shaped member having a predetermined length in the thickness direction (Z direction) of the wafer W.
具体的には、支柱42は、ウエーハWの厚み方向(Z方向)に所定の長さを有する棒状部材で構成されている。 The
Specifically, the
円弧状当接支持部43は、ウエーハWの外周下部Wbに設定された接触許容領域Rのうち、第1支持部位S1および第2支持部位S2の間を補う位置に設定された第3支持部位S3の円弧状の領域と当接し、当該領域を下方から支えるものである。さらに、円弧状当接支持部43は、その上端が第3当接支持部41の上端と同じ高さに設定して配置されている。
具体的には、平面視してウエーハWの中心Wcを基準にすると、円弧状当接支持部43は、第1当接支持部21、第2当接支持部31および第3当接支持部41の隙間を埋めるような位置(例えば12ヶ所)に、ウエーハWの外縁形状に沿った円弧状の部材が配置されている。
より具体的には、円弧状当接支持部43は、金属や樹脂、ゴム等で構成されており、不図示の連結金具等を介して装置フレーム1fに取り付けられている。
なお、「同じ高さ」とは、ミクロン単位で同じ高さである状態のみならず、ウエーハWを取り扱う上で支障の無い範囲で同じとみなせる状態も含み、上下方向の多少の誤差(例えば、弾性部材の変形で生じるミリ単位の誤差)が含まれていても良い(以下も同じ)。 The arc-shapedcontact support portion 43 is a third support portion set at a position that complements between the first support portion S1 and the second support portion S2 in the contact allowable region R set in the lower outer peripheral portion Wb of the wafer W. It abuts on the arcuate region of S3 and supports the region from below. Further, the arcuate contact support portion 43 is arranged so that the upper end thereof is set at the same height as the upper end of the third contact support portion 41.
Specifically, when the center Wc of the wafer W is used as a reference in a plan view, the arcuatecontact support portion 43 is the first contact support portion 21, the second contact support portion 31, and the third contact support portion. Arc-shaped members along the outer edge shape of the wafer W are arranged at positions (for example, 12 places) that fill the gaps of 41.
More specifically, the arc-shapedcontact support portion 43 is made of metal, resin, rubber, or the like, and is attached to the device frame 1f via a connecting metal fitting or the like (not shown).
The "same height" includes not only a state where the height is the same in micron units but also a state where the height can be regarded as the same within a range that does not hinder the handling of the waha W, and a slight error in the vertical direction (for example,). An error in millimeters caused by deformation of the elastic member) may be included (the same applies hereinafter).
具体的には、平面視してウエーハWの中心Wcを基準にすると、円弧状当接支持部43は、第1当接支持部21、第2当接支持部31および第3当接支持部41の隙間を埋めるような位置(例えば12ヶ所)に、ウエーハWの外縁形状に沿った円弧状の部材が配置されている。
より具体的には、円弧状当接支持部43は、金属や樹脂、ゴム等で構成されており、不図示の連結金具等を介して装置フレーム1fに取り付けられている。
なお、「同じ高さ」とは、ミクロン単位で同じ高さである状態のみならず、ウエーハWを取り扱う上で支障の無い範囲で同じとみなせる状態も含み、上下方向の多少の誤差(例えば、弾性部材の変形で生じるミリ単位の誤差)が含まれていても良い(以下も同じ)。 The arc-shaped
Specifically, when the center Wc of the wafer W is used as a reference in a plan view, the arcuate
More specifically, the arc-shaped
The "same height" includes not only a state where the height is the same in micron units but also a state where the height can be regarded as the same within a range that does not hinder the handling of the waha W, and a slight error in the vertical direction (for example,). An error in millimeters caused by deformation of the elastic member) may be included (the same applies hereinafter).
第1昇降部5は、第1支持部2の上端と第2支持部3の上端との相対高さを変更するものである。
具体的には、第1昇降部5は、第1支持部2をウエーハWの厚み方向(Z方向)に昇降動作させるものであり、第1支持部2の連結部材23を上下方向(Z方向)に昇降動作させるロッド51と、フレーム1fに取り付けられた本体部52等を備えている。
より具体的には、第1昇降部5は、ラックアンドピニオン機構やカム機構などの回転運動を直線運動に変換する機構(いわゆる、アクチュエータ)で構成されており、回転運動を行うモータ(ステッピングモータやサーボモータ等)を備えている。このモータは、制御部8に接続されており、所定の回転数で回転したり、所定の角度で静止したりする。そのため、第1昇降部5は、制御部8からの制御信号に基づいて、ロッド51を所定の速度で移動させたり、所定の位置で静止させたりすることができる。そのため、第1昇降部5は、第1支持部2を上下方向に移動させたり、所定の高さで静止させたりすることができる。 The first elevatingpart 5 changes the relative height between the upper end of the first support part 2 and the upper end of the second support part 3.
Specifically, the first elevatingportion 5 moves the first supporting portion 2 up and down in the thickness direction (Z direction) of the wafer W, and moves the connecting member 23 of the first supporting portion 2 in the vertical direction (Z direction). ), A rod 51 that moves up and down, a main body 52 attached to the frame 1f, and the like are provided.
More specifically, the first elevatingunit 5 is composed of a mechanism (so-called actuator) that converts rotary motion into linear motion, such as a rack and pinion mechanism and a cam mechanism, and is a motor (stepping motor) that performs rotary motion. And servo motors, etc.). This motor is connected to the control unit 8 and rotates at a predetermined rotation speed or stops at a predetermined angle. Therefore, the first elevating unit 5 can move the rod 51 at a predetermined speed or stop it at a predetermined position based on the control signal from the control unit 8. Therefore, the first elevating part 5 can move the first supporting part 2 in the vertical direction or make it stationary at a predetermined height.
具体的には、第1昇降部5は、第1支持部2をウエーハWの厚み方向(Z方向)に昇降動作させるものであり、第1支持部2の連結部材23を上下方向(Z方向)に昇降動作させるロッド51と、フレーム1fに取り付けられた本体部52等を備えている。
より具体的には、第1昇降部5は、ラックアンドピニオン機構やカム機構などの回転運動を直線運動に変換する機構(いわゆる、アクチュエータ)で構成されており、回転運動を行うモータ(ステッピングモータやサーボモータ等)を備えている。このモータは、制御部8に接続されており、所定の回転数で回転したり、所定の角度で静止したりする。そのため、第1昇降部5は、制御部8からの制御信号に基づいて、ロッド51を所定の速度で移動させたり、所定の位置で静止させたりすることができる。そのため、第1昇降部5は、第1支持部2を上下方向に移動させたり、所定の高さで静止させたりすることができる。 The first elevating
Specifically, the first elevating
More specifically, the first elevating
第2昇降部6は、第2支持部3の上端と第3支持部4の上端との相対高さを変更するものである。
具体的には、第2昇降部6は、第2支持部4をウエーハWの厚み方向(Z方向)に昇降動作させるものであり、第2支持部3の連結部材33を上下方向(Z方向)に昇降動作させるロッド61と、フレーム1fに取り付けられた本体部62等を備えている。
より具体的には、第2昇降部6は、第1昇降部5と同様の構成をしており、制御部8からの制御信号に基づいて、ロッド61を所定の速度で移動させたり、所定の位置で静止させたりすることができる。そのため、第2昇降部6は、第2支持部3を上下方向に移動させたり、所定の高さで静止させたりすることができる。 The second elevatingpart 6 changes the relative height between the upper end of the second support part 3 and the upper end of the third support part 4.
Specifically, the second elevatingportion 6 moves the second supporting portion 4 up and down in the thickness direction (Z direction) of the wafer W, and moves the connecting member 33 of the second supporting portion 3 in the vertical direction (Z direction). ), A rod 61 that moves up and down, a main body 62, and the like attached to the frame 1f are provided.
More specifically, the second elevatingunit 6 has the same configuration as the first elevating unit 5, and the rod 61 is moved at a predetermined speed or determined based on the control signal from the control unit 8. It can be stopped at the position of. Therefore, the second elevating part 6 can move the second supporting part 3 in the vertical direction or make it stationary at a predetermined height.
具体的には、第2昇降部6は、第2支持部4をウエーハWの厚み方向(Z方向)に昇降動作させるものであり、第2支持部3の連結部材33を上下方向(Z方向)に昇降動作させるロッド61と、フレーム1fに取り付けられた本体部62等を備えている。
より具体的には、第2昇降部6は、第1昇降部5と同様の構成をしており、制御部8からの制御信号に基づいて、ロッド61を所定の速度で移動させたり、所定の位置で静止させたりすることができる。そのため、第2昇降部6は、第2支持部3を上下方向に移動させたり、所定の高さで静止させたりすることができる。 The second elevating
Specifically, the second elevating
More specifically, the second elevating
負圧吸引部8は、第1支持部位S1、第2支持部位S2および第3支持部位S3に負圧を生じさせてウエーハWを吸引保持するものである。
具体的には、負圧吸引部8は、ウエーハWの外周下部Wbと当接する第1支持部2、第2支持部3および第3支持部4の上端に負圧を生じさせることで、ウエーハWを吸引保持するものである。
より具体的には、負圧吸引部8は、第1当接支持部21、第2当接支持部31および第3当接支持部41のエア連通口に接続されたエア配管、切替バルブ、負圧発生手段等で構成されている。 The negativepressure suction unit 8 creates a negative pressure in the first support portion S1, the second support portion S2, and the third support portion S3 to suck and hold the wafer W.
Specifically, the negativepressure suction unit 8 generates a negative pressure at the upper ends of the first support portion 2, the second support portion 3, and the third support portion 4 that come into contact with the lower outer peripheral portion Wb of the wafer W, thereby causing the wafer. It sucks and holds W.
More specifically, the negativepressure suction portion 8 includes an air pipe, a switching valve, which are connected to the air communication ports of the first contact support portion 21, the second contact support portion 31, and the third contact support portion 41. It is composed of negative pressure generating means and the like.
具体的には、負圧吸引部8は、ウエーハWの外周下部Wbと当接する第1支持部2、第2支持部3および第3支持部4の上端に負圧を生じさせることで、ウエーハWを吸引保持するものである。
より具体的には、負圧吸引部8は、第1当接支持部21、第2当接支持部31および第3当接支持部41のエア連通口に接続されたエア配管、切替バルブ、負圧発生手段等で構成されている。 The negative
Specifically, the negative
More specifically, the negative
切替バルブは、第1当接支持部21、第2当接支持部31および第3当接支持部41のエア連通口それぞれと、負圧発生手段とを連通(つまり、吸引保持)させるか、大気と連通(つまり、吸引解除)させるかを個別に切り替えるものであり、制御部8と接続されている。
The switching valve communicates (that is, sucks and holds) the air communication ports of the first contact support portion 21, the second contact support portion 31, and the third contact support portion 41 with the negative pressure generating means. It individually switches whether to communicate with the air (that is, release suction), and is connected to the control unit 8.
負圧発生手段としては、真空ポンプやエジェクタ、それらに接続された圧力タンクや接続用配管等が例示できる。
Examples of the negative pressure generating means include vacuum pumps, ejectors, pressure tanks connected to them, connecting pipes, and the like.
そして、第1当接支持部21、第2当接支持部31、第3当接支持部41は、切替バルブなどを介して真空ポンプなどの負圧発生手段と接続されている。そして、第1当接支持部21、第2当接支持部31、第3当接支持部41は、制御部8にて切替バルブ等を制御して、負圧状態若しくは大気解放状態に切り替えることで、ウエーハWを保持したり保持解除したりすることができる。
Then, the first contact support portion 21, the second contact support portion 31, and the third contact support portion 41 are connected to a negative pressure generating means such as a vacuum pump via a switching valve or the like. Then, the first contact support portion 21, the second contact support portion 31, and the third contact support portion 41 control the switching valve or the like by the control unit 8 to switch to the negative pressure state or the atmosphere release state. Then, the wafer W can be held and released.
制御部9は、第1昇降部5および第2昇降部6における相対高さの変更を制御するものである。さらに、制御部9は、負圧吸引部8による吸引保持または解除の切替を制御するものである。
具体的には、制御部9は、第1昇降部5のモータと第2昇降部6のモータを制御して、ウエーハWを支え保持する高さを、上段位置H/中段位置M/下段位置Lに変更するものである。制御部9は、上段位置Hに切り替える第1支持モード、中段位置Mに切り替える第2支持モード、下段位置Lに切り替える第3支持モードを有しており、これら支持モードに切り替えることができる。なお、ここで言う上段位置H/中段位置M/下段位置Lとは、ウエーハWを支持する高さの違いに依らず、第1支持部2の上端、第2支持部3の上端および第3支持部4の上端の互いの位置関係に基づいて定義づけられた呼称である。 The control unit 9 controls changes in the relative heights of the first elevatingunit 5 and the second elevating unit 6. Further, the control unit 9 controls switching of suction holding or release by the negative pressure suction unit 8.
Specifically, the control unit 9 controls the motor of the first elevatingunit 5 and the motor of the second elevating unit 6, and sets the height at which the wafer W is supported and held by the upper position H / middle position M / lower position. It is changed to L. The control unit 9 has a first support mode for switching to the upper position H, a second support mode for switching to the middle position M, and a third support mode for switching to the lower position L, and the control unit 9 can switch to these support modes. The upper position H / middle position M / lower position L referred to here are the upper end of the first support portion 2, the upper end of the second support portion 3, and the third, regardless of the difference in the height at which the wafer W is supported. It is a name defined based on the positional relationship between the upper ends of the support portions 4.
具体的には、制御部9は、第1昇降部5のモータと第2昇降部6のモータを制御して、ウエーハWを支え保持する高さを、上段位置H/中段位置M/下段位置Lに変更するものである。制御部9は、上段位置Hに切り替える第1支持モード、中段位置Mに切り替える第2支持モード、下段位置Lに切り替える第3支持モードを有しており、これら支持モードに切り替えることができる。なお、ここで言う上段位置H/中段位置M/下段位置Lとは、ウエーハWを支持する高さの違いに依らず、第1支持部2の上端、第2支持部3の上端および第3支持部4の上端の互いの位置関係に基づいて定義づけられた呼称である。 The control unit 9 controls changes in the relative heights of the first elevating
Specifically, the control unit 9 controls the motor of the first elevating
より具体的には、制御部9は、コンピュータやプログラマブルロジックコントローラ等(つまり、ハードウェア)と、その実行プログラム等(つまり、ソフトウェア)で構成されており、制御対象となる各部(第1昇降部5や第2昇降部5のモータ、負圧吸引部8の切替バルブ等)と制御信号を入出力し、所定の制御処理を行うよう構成されている。
More specifically, the control unit 9 is composed of a computer, a programmable logic controller, etc. (that is, hardware) and an execution program thereof (that is, software), and each unit (first elevating unit) to be controlled. 5 and the motor of the second elevating unit 5, the switching valve of the negative pressure suction unit 8, etc.) and the control signal are input and output to perform a predetermined control process.
図4は、本発明を具現化する形態におけるウエーハ保持装置の一例を示す断面図である。図4(a)には、上段位置HにてウエーハWを支持している様子が示されている。
図4(b)には、を中段位置MにてウエーハW支持している様子が示されている。
図4(c)には、下段位置LにてウエーハWを支持している様子が示されている。 FIG. 4 is a cross-sectional view showing an example of a wafer holding device in a form embodying the present invention. FIG. 4A shows that the wafer W is supported at the upper position H.
FIG. 4B shows that the wafer W is supported at the middle position M.
FIG. 4C shows how the wafer W is supported at the lower position L.
図4(b)には、を中段位置MにてウエーハW支持している様子が示されている。
図4(c)には、下段位置LにてウエーハWを支持している様子が示されている。 FIG. 4 is a cross-sectional view showing an example of a wafer holding device in a form embodying the present invention. FIG. 4A shows that the wafer W is supported at the upper position H.
FIG. 4B shows that the wafer W is supported at the middle position M.
FIG. 4C shows how the wafer W is supported at the lower position L.
上段位置は、第2支持部3の上端および第3支持部4の上端の高さよりも上方に第1支持部2の上端を配置させる位置関係を言う。そして、このような状態に移行して当該状態に保つモードを「第1支持モード」と呼ぶ。
具体的には、第1支持モードでは、第2当接保持部31および第3当接保持部41の上端の高さよりも上方に、第1当接保持部21の上端を配置させる。 The upper position refers to a positional relationship in which the upper end of thefirst support portion 2 is arranged above the heights of the upper end of the second support portion 3 and the upper end of the third support portion 4. Then, the mode that shifts to such a state and keeps the state is called a "first support mode".
Specifically, in the first support mode, the upper end of the firstcontact holding portion 21 is arranged above the height of the upper ends of the second contact holding portion 31 and the third contact holding portion 41.
具体的には、第1支持モードでは、第2当接保持部31および第3当接保持部41の上端の高さよりも上方に、第1当接保持部21の上端を配置させる。 The upper position refers to a positional relationship in which the upper end of the
Specifically, in the first support mode, the upper end of the first
第1支持モード(上段位置)にてウエーハWを上方から下降させて受渡動作を行えば、ウエーハWの第1支持部位S1に第1当接保持部21が当接するが、第2支持部位S2と第2当接保持部31や、第3支持部位S3と第3当接保持部41とは離隔した状態となる。このとき、外周下部を3ヶ所で支持されているウエーハWはたわみ易く、ウエーハWの第1支持部位S1ではない部位(例えば、第2支持部位S2)は、垂れ下がった状態になることが多い。
If the wafer W is lowered from above in the first support mode (upper position) to perform the delivery operation, the first contact holding portion 21 comes into contact with the first support portion S1 of the wafer W, but the second support portion S2 And the second contact holding portion 31, and the third support portion S3 and the third contact holding portion 41 are separated from each other. At this time, the wafer W whose lower outer periphery is supported at three places is easily bent, and the portion of the wafer W other than the first support portion S1 (for example, the second support portion S2) is often in a hanging state.
中段位置は、第3支持部4の上端の高さよりも上方で、第1支持部2の上端と第2支持部3の上端とを同じ高さに配置させる位置関係を言う。そして、このような状態に移行して当該状態に保つモードを「第2支持モード」と呼ぶ。
具体的には、第2支持モードでは、第3当接保持部41の上端の高さよりも上方で、第1支持部2の上端と第2支持部3の上端とを同じ高さに配置させる。 The middle position is above the height of the upper end of thethird support portion 4, and refers to a positional relationship in which the upper end of the first support portion 2 and the upper end of the second support portion 3 are arranged at the same height. Then, the mode that shifts to such a state and keeps the state is called a "second support mode".
Specifically, in the second support mode, the upper end of thefirst support portion 2 and the upper end of the second support portion 3 are arranged at the same height above the height of the upper end of the third contact holding portion 41. ..
具体的には、第2支持モードでは、第3当接保持部41の上端の高さよりも上方で、第1支持部2の上端と第2支持部3の上端とを同じ高さに配置させる。 The middle position is above the height of the upper end of the
Specifically, in the second support mode, the upper end of the
第1支持モード(上段位置)でウエーハWを保持した状態から第2支持モード(中段位置)に切り替えれば、ウエーハWの第1支持部位S1と第1当接保持部21とが当接したまま、さらに第2支持部位S2と第2当接保持部31とが当接する。つまり、ウエーハWの外周下部Wbを支持する場所が増えると共に支持する間隔が狭くなる。
このとき、外周下部を6ヶ所で支持されているウエーハWのたわみが改善され、ウエーハWの第1支持部位S1および第2支持部位S2ではない部位(例えば、第3支持部位S3等)の垂れ下がりが減少する。 If the wafer W is held in the first support mode (upper position) and then switched to the second support mode (middle position), the first support portion S1 of the wafer W and the firstcontact holding portion 21 remain in contact with each other. Further, the second support portion S2 and the second contact holding portion 31 come into contact with each other. That is, the number of places for supporting the lower outer peripheral portion Wb of the wafer W increases, and the interval for supporting the wafer W becomes narrower.
At this time, the deflection of the wafer W whose lower outer periphery is supported at six points is improved, and the portion of the wafer W that is not the first support portion S1 and the second support portion S2 (for example, the third support portion S3, etc.) hangs down. Decreases.
このとき、外周下部を6ヶ所で支持されているウエーハWのたわみが改善され、ウエーハWの第1支持部位S1および第2支持部位S2ではない部位(例えば、第3支持部位S3等)の垂れ下がりが減少する。 If the wafer W is held in the first support mode (upper position) and then switched to the second support mode (middle position), the first support portion S1 of the wafer W and the first
At this time, the deflection of the wafer W whose lower outer periphery is supported at six points is improved, and the portion of the wafer W that is not the first support portion S1 and the second support portion S2 (for example, the third support portion S3, etc.) hangs down. Decreases.
下段位置は、第1支持部2の上端および第2支持部3の上端の高さを、第3支持部4の上端の高さと同じ高さに配置させる位置関係を言う。そして、このような状態に移行して当該状態に保つモードを「第3支持モード」と呼ぶ。
具体的には、第3支持モードでは、第1当接保持部21の上端および第2当接保持部31の上端の高さを、第3当接保持部41の上端の高さと同じ高さに配置させる。 The lower position refers to a positional relationship in which the heights of the upper end of thefirst support portion 2 and the upper end of the second support portion 3 are arranged at the same height as the height of the upper end of the third support portion 4. Then, the mode that shifts to such a state and keeps the state is called a "third support mode".
Specifically, in the third support mode, the heights of the upper end of the firstcontact holding portion 21 and the upper end of the second contact holding portion 31 are the same as the height of the upper end of the third contact holding portion 41. To be placed in.
具体的には、第3支持モードでは、第1当接保持部21の上端および第2当接保持部31の上端の高さを、第3当接保持部41の上端の高さと同じ高さに配置させる。 The lower position refers to a positional relationship in which the heights of the upper end of the
Specifically, in the third support mode, the heights of the upper end of the first
第2支持モード(中段位置)でウエーハWを保持した状態から第3支持モード(下段位置)に切り替えれば、ウエーハWの第1支持部位S1と第1当接保持部21とが当接し、第2支持部位S2と第2当接保持部31とが当接したまま、さらに第3支持部位S3と第3当接保持部41とが当接する。
このとき、ウエーハWは、外周下部を外周全域に亘って支持されるため、中心部Wcは自重による凹みが生じるものの、外周のみに着目すれば垂れ下がりが改善され、平坦な状態で支持されることとなる。 If the wafer W is held in the second support mode (middle position) and then switched to the third support mode (lower position), the first support portion S1 of the wafer W and the firstcontact holding portion 21 come into contact with each other, and the second support mode (lower position) is used. 2 While the support portion S2 and the second contact holding portion 31 are in contact with each other, the third support portion S3 and the third contact holding portion 41 are further in contact with each other.
At this time, since the wafer W supports the lower part of the outer circumference over the entire outer circumference, the central portion Wc has a dent due to its own weight, but if only the outer circumference is focused, the sagging is improved and the wafer W is supported in a flat state. It becomes.
このとき、ウエーハWは、外周下部を外周全域に亘って支持されるため、中心部Wcは自重による凹みが生じるものの、外周のみに着目すれば垂れ下がりが改善され、平坦な状態で支持されることとなる。 If the wafer W is held in the second support mode (middle position) and then switched to the third support mode (lower position), the first support portion S1 of the wafer W and the first
At this time, since the wafer W supports the lower part of the outer circumference over the entire outer circumference, the central portion Wc has a dent due to its own weight, but if only the outer circumference is focused, the sagging is improved and the wafer W is supported in a flat state. It becomes.
<動作フロー>
図5は、本発明を具現化する形態における動作フローの一例を示すフロー図である。 <Operation flow>
FIG. 5 is a flow chart showing an example of an operation flow in a mode embodying the present invention.
図5は、本発明を具現化する形態における動作フローの一例を示すフロー図である。 <Operation flow>
FIG. 5 is a flow chart showing an example of an operation flow in a mode embodying the present invention.
先ず、ウエーハ保持装置1は、ウエーハWの受け取りが可能であれば、制御部9を第1支持モード(上段位置)に切り替え、待機する(ステップs1)。
First, if the wafer holding device 1 can receive the wafer W, it switches the control unit 9 to the first support mode (upper position) and stands by (step s1).
その後、ウエーハWを載置し(ステップs2)、ウエーハWの第1支持部位S1を吸引保持させる(ステップs3)。
After that, the wafer W is placed (step s2), and the first support portion S1 of the wafer W is sucked and held (step s3).
そして、第1昇降部5や第2昇降部6を制御して、第2支持モード(中段位置)へ切り替え(ステップs4)した後、第3支持モード(下段位置)へ切り替える(ステップs5)。なお、第1支持モード(上段位置)から第2支持モード(中段位置)へ切り替えたときに、第2支持部位S2に負圧を生じさせてウエーハWを吸引保持し、第2支持モード(中段位置)から第3支持モード(下段位置)へ切り替えたときに、第3支持部位S3に負圧を生じさせてウエーハWを吸引保持させる。
Then, after controlling the first elevating part 5 and the second elevating part 6 to switch to the second support mode (middle stage position) (step s4), the third support mode (lower stage position) is switched to (step s5). When switching from the first support mode (upper stage position) to the second support mode (middle stage position), a negative pressure is generated in the second support portion S2 to suck and hold the wafer W, and the second support mode (middle stage). When switching from the position) to the third support mode (lower position), a negative pressure is generated in the third support portion S3 to suck and hold the wafer W.
その後、所望の処理や検査等を実行し(ステップs6)、処理等が終了したかどうかを判定する(ステップs7)。そして、処理等が終了していなければ、上述のステップs6を継続し、処理等が終了していれば一連のフローを終了する。
After that, a desired process, inspection, etc. is executed (step s6), and it is determined whether or not the process, etc. is completed (step s7). Then, if the processing or the like is not completed, the above-mentioned step s6 is continued, and if the processing or the like is completed, the series of flows is terminated.
この様な構成をしているため、本発明に係るウエーハ保持装置1は、ウエーハWを支持する箇所や面積を段階的に増やすことができるので、反りや変形を生じ易いウエーハWであっても、部分的な外周部の浮き上がりを防ぎつつ、所望の姿勢で外周部を保持することができる。そのため、反りや変形を生じ易いウエーハを保持する際に、当該ウエーハの外周下部の一部しか接触が許されていない場合であっても、所望の姿勢で確実に保持することができる。
Since the wafer holding device 1 according to the present invention has such a configuration, the location and area for supporting the wafer W can be increased stepwise, so that even if the wafer W is liable to warp or deform. , The outer peripheral portion can be held in a desired posture while preventing the outer peripheral portion from being partially lifted. Therefore, when holding a wafer that is prone to warping or deformation, it can be reliably held in a desired posture even when only a part of the lower portion of the outer circumference of the wafer is allowed to come into contact with the wafer.
[変形例]
(第3支持部4について)
なお上述では、第3支持部4として、第3当接支持部41と円弧状当接支持部43を備えた構成を例示した。この場合、第3支持部位S3として、保持対象であるウエーハWの外縁形状に沿った円弧状に設定しておく。
この様な構成であれば、ウエーハWの外周下部Wbに設定された接触許容領域Rの大部分を支持することができ、極めて平坦な状態で支持できるため、より好ましい。 [Modification example]
(About the 3rd support part 4)
In the above description, the configuration including the thirdcontact support portion 41 and the arcuate contact support portion 43 as the third support portion 4 is exemplified. In this case, the third support portion S3 is set in an arc shape along the outer edge shape of the wafer W to be held.
Such a configuration is more preferable because most of the contact allowable region R set in the lower outer peripheral portion Wb of the wafer W can be supported and can be supported in an extremely flat state.
(第3支持部4について)
なお上述では、第3支持部4として、第3当接支持部41と円弧状当接支持部43を備えた構成を例示した。この場合、第3支持部位S3として、保持対象であるウエーハWの外縁形状に沿った円弧状に設定しておく。
この様な構成であれば、ウエーハWの外周下部Wbに設定された接触許容領域Rの大部分を支持することができ、極めて平坦な状態で支持できるため、より好ましい。 [Modification example]
(About the 3rd support part 4)
In the above description, the configuration including the third
Such a configuration is more preferable because most of the contact allowable region R set in the lower outer peripheral portion Wb of the wafer W can be supported and can be supported in an extremely flat state.
しかし、第3支持部4は、この様な構成に限定されず、他の構成であっても本発明を具現化することができる。
例えば、第3当接支持部41を省き、円弧状当接支持部43複数箇所に離隔配置させる構成としても良い。或いは、円弧状当接支持部43を省き、第3当接支持部41を複数箇所に離隔配置させる構成としても良い。この様な構成でも、ウエーハWの外周下部Wbに設定された接触許容領域Rを全周に亘って複数箇所で支えるので、ウエーハWを所望の姿勢で確実に保持することができる。 However, thethird support portion 4 is not limited to such a configuration, and the present invention can be embodied even with other configurations.
For example, the thirdcontact support portion 41 may be omitted, and the arcuate contact support portion 43 may be arranged at a plurality of locations at a distance. Alternatively, the arc-shaped contact support portion 43 may be omitted, and the third contact support portion 41 may be spaced apart from each other at a plurality of locations. Even with such a configuration, since the contact allowable region R set in the lower outer peripheral portion Wb of the wafer W is supported at a plurality of locations over the entire circumference, the wafer W can be reliably held in a desired posture.
例えば、第3当接支持部41を省き、円弧状当接支持部43複数箇所に離隔配置させる構成としても良い。或いは、円弧状当接支持部43を省き、第3当接支持部41を複数箇所に離隔配置させる構成としても良い。この様な構成でも、ウエーハWの外周下部Wbに設定された接触許容領域Rを全周に亘って複数箇所で支えるので、ウエーハWを所望の姿勢で確実に保持することができる。 However, the
For example, the third
なお上述では、平面視してウエーハWの中心Wcを基準にすると、第1支持部位S1と第2支持部位S2が互いに60度間隔で振り分け配置された位置に設定され、これらの間を補う位置に第3支持部位S3が設定されており、これら部位S1~S3に対応する位置に、第1当接支持部21や第2当接支持部31、第3当接支持部41、円弧状当接支持部43が配置されている構成を例示した。この様な構成であれば、ウエーハWの外周を均等に振り分けて下方から支持し、上段位置から中段位置、下段位置へと支持状態を切り替える際に、ウエーハ外周の反りを改善しやすいため、好ましい。しかし、第1支持部位S1と第2支持部位S2は、この様な均等配置に限らず、適宜変更しても良い。また、第1支持部位S1は、4箇所以上に設定されていても良いし、第2支持部位S2は、4箇所以上に設定されていても良い。これら支持点数は、ウエーハWの厚みや変形量、残留応力等に応じて適宜決定すれば良い。
In the above description, when the center Wc of the wafer W is used as a reference in a plan view, the first support portion S1 and the second support portion S2 are set at positions where they are distributed and arranged at intervals of 60 degrees, and the positions that supplement the gaps between the first support portion S1 and the second support portion S2. A third support portion S3 is set in the above, and the first contact support portion 21, the second contact support portion 31, the third contact support portion 41, and the arc-shaped contact are located at positions corresponding to these portions S1 to S3. The configuration in which the contact support portion 43 is arranged is illustrated. With such a configuration, the outer circumference of the wafer W is evenly distributed and supported from below, and when the support state is switched from the upper position to the middle position and the lower position, it is easy to improve the warp of the outer circumference of the wafer, which is preferable. .. However, the first support portion S1 and the second support portion S2 are not limited to such an even arrangement, and may be appropriately changed. Further, the first support portion S1 may be set at four or more locations, and the second support portion S2 may be set at four or more locations. The number of these support points may be appropriately determined according to the thickness of the wafer W, the amount of deformation, the residual stress, and the like.
(負圧吸引部8について)
なお上述では、負圧吸引部8として、第1支持部位S1、第2支持部位S2および第3支持部位S3に負圧を生じさせてウエーハWを吸引保持する構成を例示した。さらに、制御部9は、第2支持モード(中段位置)へ切り替えたときに、第2支持部位S2に負圧を生じさせてウエーハWを吸引保持し、第3支持モード(下段位置)へ切り替えたときに、第3支持部位S3に負圧を生じさせてウエーハWを吸引保持させるフローを例示した。
この様な構成であれば、ウエーハWの外周下部Wbに設定された接触許容領域Rの幅(つまり、径方向の長さ)が短くても、負圧吸引する箇所および面積を増やすことができる。そのため、ウエーハWを吸引保持する圧力を低めに設定しても、全体として保持力を高めることができ、保持中に外力が加わっても外れにくくなるので、好ましい。 (About negative pressure suction unit 8)
In the above description, as the negativepressure suction unit 8, a configuration in which a negative pressure is generated in the first support portion S1, the second support portion S2, and the third support portion S3 to suck and hold the wafer W is illustrated. Further, when the control unit 9 switches to the second support mode (middle position), the control unit 9 generates a negative pressure in the second support portion S2 to suck and hold the wafer W, and switches to the third support mode (lower position). At that time, a flow in which a negative pressure is generated in the third support portion S3 to suck and hold the wafer W is illustrated.
With such a configuration, even if the width (that is, the length in the radial direction) of the contact allowable region R set in the lower outer peripheral portion Wb of the wafer W is short, the location and area for negative pressure suction can be increased. .. Therefore, even if the pressure for sucking and holding the wafer W is set low, the holding force can be increased as a whole, and even if an external force is applied during holding, the wafer W is less likely to come off, which is preferable.
なお上述では、負圧吸引部8として、第1支持部位S1、第2支持部位S2および第3支持部位S3に負圧を生じさせてウエーハWを吸引保持する構成を例示した。さらに、制御部9は、第2支持モード(中段位置)へ切り替えたときに、第2支持部位S2に負圧を生じさせてウエーハWを吸引保持し、第3支持モード(下段位置)へ切り替えたときに、第3支持部位S3に負圧を生じさせてウエーハWを吸引保持させるフローを例示した。
この様な構成であれば、ウエーハWの外周下部Wbに設定された接触許容領域Rの幅(つまり、径方向の長さ)が短くても、負圧吸引する箇所および面積を増やすことができる。そのため、ウエーハWを吸引保持する圧力を低めに設定しても、全体として保持力を高めることができ、保持中に外力が加わっても外れにくくなるので、好ましい。 (About negative pressure suction unit 8)
In the above description, as the negative
With such a configuration, even if the width (that is, the length in the radial direction) of the contact allowable region R set in the lower outer peripheral portion Wb of the wafer W is short, the location and area for negative pressure suction can be increased. .. Therefore, even if the pressure for sucking and holding the wafer W is set low, the holding force can be increased as a whole, and even if an external force is applied during holding, the wafer W is less likely to come off, which is preferable.
しかし、負圧吸引部8は、この様な構成に限定されず、他の構成であっても本発明を具現化することができる。例えば、円弧状当接支持部43を多孔質材料で構成したり、円弧状当接支持部43の上面に溝や細孔を設けてエアが連通する構成にしたりして、第3当接支持部41と同様に負圧発生手段と接続しても良い。そうすることで、負圧吸引する箇所および面積を一層増やすことができる。そのため、ウエーハWを吸引保持する圧力を低めに設定しても、全体として保持力を高めることができ、保持中に外力が加わっても外れにくくなるので、より好ましい。
However, the negative pressure suction unit 8 is not limited to such a configuration, and the present invention can be embodied even with other configurations. For example, the arc-shaped contact support portion 43 may be made of a porous material, or a groove or pore may be provided on the upper surface of the arc-shaped contact support portion 43 so that air can communicate with the third contact support portion 43. It may be connected to the negative pressure generating means in the same manner as the unit 41. By doing so, the location and area of negative pressure suction can be further increased. Therefore, even if the pressure for sucking and holding the wafer W is set low, the holding force can be increased as a whole, and even if an external force is applied during holding, the wafer W is less likely to come off, which is more preferable.
或いは、第1支持部位S1のみに負圧を生じさせる構成や、第1支持部位S1と第2支持部位S2に負圧を生じさせる構成としても良い。この様な構成でも、ウエーハWの外周下部Wbに設定された接触許容領域Rには負圧吸引力がはたらいているので、ウエーハWを所望の姿勢で確実に保持することができる。
Alternatively, a configuration in which a negative pressure is generated only in the first support portion S1 or a configuration in which a negative pressure is generated in the first support portion S1 and the second support portion S2 may be used. Even with such a configuration, since the negative pressure suction force acts on the contact allowable region R set in the lower outer peripheral portion Wb of the wafer W, the wafer W can be reliably held in a desired posture.
(第1支持部2と第2支持部3について)
なお上述では、第1支持部2の支柱22よりも第2支持部3の支柱32の方が長く、第1支持部2の連結部材23が、第2支持部3の連結部材33よりも上方に配置されている構成を例示した。しかし、第1支持部2と第2支持部3は、この様な構成に限定されず、他の構成であっても本発明を具現化することができる。例えば、第1支持部2の連結部材23を第2支持部3の連結部材33よりも下方に配置し、第1支持部2の支柱22を第2支持部3の支柱32よりも長い構成としても良い。このとき、上段位置と中段位置との変更により連結部材23と連結部材33とが干渉しないようなクリアランスを考慮して、第1支持部2の支柱22の長さを設定する。 (About thefirst support part 2 and the second support part 3)
In the above description, thesupport 32 of the second support 3 is longer than the support 22 of the first support 2, and the connecting member 23 of the first support 2 is above the connecting member 33 of the second support 3. The configuration arranged in is illustrated. However, the first support portion 2 and the second support portion 3 are not limited to such a configuration, and the present invention can be embodied even with other configurations. For example, the connecting member 23 of the first support portion 2 is arranged below the connecting member 33 of the second support portion 3, and the strut 22 of the first support portion 2 is longer than the strut 32 of the second support portion 3. Is also good. At this time, the length of the support column 22 of the first support portion 2 is set in consideration of the clearance so that the connecting member 23 and the connecting member 33 do not interfere with each other due to the change between the upper position and the middle position.
なお上述では、第1支持部2の支柱22よりも第2支持部3の支柱32の方が長く、第1支持部2の連結部材23が、第2支持部3の連結部材33よりも上方に配置されている構成を例示した。しかし、第1支持部2と第2支持部3は、この様な構成に限定されず、他の構成であっても本発明を具現化することができる。例えば、第1支持部2の連結部材23を第2支持部3の連結部材33よりも下方に配置し、第1支持部2の支柱22を第2支持部3の支柱32よりも長い構成としても良い。このとき、上段位置と中段位置との変更により連結部材23と連結部材33とが干渉しないようなクリアランスを考慮して、第1支持部2の支柱22の長さを設定する。 (About the
In the above description, the
なお上述では、第1昇降部5と第2昇降部6がそれぞれ独立して、装置フレーム1fに取り付けられており、第1昇降部5と第2昇降部6には各々モータを備えた構成を例示した。この様な構成であれば、モータの回転角度や回転速度等を制御して、第1支持部2や第2支持部3の上端の位置や移動速度等をきめ細かく制御できるため好ましい。
In the above description, the first elevating part 5 and the second elevating part 6 are independently attached to the device frame 1f, and the first elevating part 5 and the second elevating part 6 are each provided with a motor. Illustrated. Such a configuration is preferable because the rotation angle, rotation speed, and the like of the motor can be controlled to finely control the position and moving speed of the upper ends of the first support portion 2 and the second support portion 3.
しかし、第1昇降部5と第2昇降部6は、この様な構成に限定されず、他の構成であっても本発明を具現化することができる。例えば、第1昇降部5が、第2支持部3の連結部材33に取り付けられた構成(いわゆる、2段重ね構造)としても良い。この場合、第1昇降部5と第2昇降部6は、モータの回転による昇降機構であってもよいし、エアシリンダー等のアクチュエータを用いても良い。
However, the first elevating part 5 and the second elevating part 6 are not limited to such a configuration, and the present invention can be embodied even with other configurations. For example, the first elevating part 5 may be attached to the connecting member 33 of the second support part 3 (so-called two-stage stacking structure). In this case, the first elevating part 5 and the second elevating part 6 may be an elevating mechanism by rotation of a motor, or an actuator such as an air cylinder may be used.
なお上述では、第1昇降部5として、第1支持部2をウエーハWの厚み方向(Z方向)に昇降動作させる構成を例示し、第2昇降部6として、第2支持部3をウエーハWの厚み方向(Z方向)に昇降動作させる構成を例示した。この様な構成であれば、上段位置Hから中段位置MにウエーハWを下降させ、中段位置Mから下段位置LにウエーハWを下降させるため、下段位置での重心を下方に下げることができる。また、部品点数が比較的少なく、重量の軽いユニットを昇降動作させるため、第1昇降部6や第2昇降部7のアクチュエータを小型化することができる。そのため、ウエーハ保持装置1を検査装置やプロセス機器等に組み込んで運用するのに好ましい。
In the above description, the configuration in which the first support portion 2 is moved up and down in the thickness direction (Z direction) of the wafer W is illustrated as the first elevating part 5, and the second support portion 3 is used as the second elevating part 6 as the wafer W. The configuration in which the wafer is moved up and down in the thickness direction (Z direction) is illustrated. With such a configuration, the wafer W is lowered from the upper position H to the middle position M, and the wafer W is lowered from the middle position M to the lower position L, so that the center of gravity at the lower position can be lowered downward. Further, since the unit having a relatively small number of parts and a light weight is moved up and down, the actuators of the first elevating part 6 and the second elevating part 7 can be miniaturized. Therefore, it is preferable to incorporate the wafer holding device 1 into an inspection device, a process device, or the like for operation.
しかし、第1昇降部5と第2昇降部6は、この様な構成に限定されず、下述の様な構成としても良い。例えば、第1支持部3を固定しておき、第2支持部3を第1昇降部5にて昇降動作させ、第3支持部4を第2昇降部6にて昇降動作させる構成(いわゆる、せり上がり構造)としても良い。
この場合、第2支持部3と第3支持部4を下降させ、第1支持部3の上端が最も上方にある状態を上段位置Hと定義する。また、第3支持部4が下降したままで、第2支持部3を上昇させて、第1支持部3と第2支持部4の上端が第3支持部4の上端よりも上方にある状態を中段位置と定義する。また、第2支持部3と第3支持部4を上昇させ、第1支持部3と第2支持部4と第3支持部4の上端が同じ高さにある状態を下段位置と定義する。 However, the first elevatingpart 5 and the second elevating part 6 are not limited to such a configuration, and may have a configuration as described below. For example, the first support portion 3 is fixed, the second support portion 3 is moved up and down by the first elevating part 5, and the third support part 4 is moved up and down by the second elevating part 6 (so-called so-called). It may be a raised structure).
In this case, the state in which thesecond support portion 3 and the third support portion 4 are lowered and the upper end of the first support portion 3 is at the uppermost position is defined as the upper position H. Further, while the third support portion 4 remains lowered, the second support portion 3 is raised so that the upper ends of the first support portion 3 and the second support portion 4 are above the upper end of the third support portion 4. Is defined as the middle position. Further, a state in which the second support portion 3 and the third support portion 4 are raised and the upper ends of the first support portion 3, the second support portion 4, and the third support portion 4 are at the same height is defined as the lower position.
この場合、第2支持部3と第3支持部4を下降させ、第1支持部3の上端が最も上方にある状態を上段位置Hと定義する。また、第3支持部4が下降したままで、第2支持部3を上昇させて、第1支持部3と第2支持部4の上端が第3支持部4の上端よりも上方にある状態を中段位置と定義する。また、第2支持部3と第3支持部4を上昇させ、第1支持部3と第2支持部4と第3支持部4の上端が同じ高さにある状態を下段位置と定義する。 However, the first elevating
In this case, the state in which the
また上述では、第1昇降部5として、1つのアクチュエータで第1支持部2の連結部材23を上下方向に昇降させる構成を例示した。この様な構成であれば、複数組ある第1当接支持部21と支柱22を一体的に昇降させることができる。しかし、第1昇降部5は、この様な構成に限らず、複数組ある第1当接支持部21と支柱22を、それぞれ独立して昇降させる構成であっても良い。この構成の場合、第1支持部2において連結部材23を備える必要がなく、第2支持部3の連結部材33との干渉を気にせずに設計することができる。
Further, in the above description, as the first elevating part 5, a configuration in which the connecting member 23 of the first support part 2 is moved up and down in the vertical direction by one actuator is illustrated. With such a configuration, a plurality of sets of the first contact support portion 21 and the support column 22 can be integrally raised and lowered. However, the first elevating portion 5 is not limited to such a configuration, and may have a configuration in which a plurality of sets of the first contact support portion 21 and the support column 22 are independently raised and lowered. In the case of this configuration, it is not necessary to provide the connecting member 23 in the first support portion 2, and the design can be performed without worrying about the interference of the second support portion 3 with the connecting member 33.
また上述では、第2昇降部6として、1つのアクチュエータで第2支持部3の連結部材33を上下方向に昇降させる構成を例示した。この様な構成であれば、複数組ある第2当接支持部31と支柱32を一体的に昇降させることができる。しかし、第2昇降部6は、この様な構成に限らず、複数組ある第2当接支持部31と支柱32を、それぞれ独立して昇降させる構成であっても良い。この構成の場合、第2支持部3において連結部材33を備える必要がなく、第1支持部2の連結部材23との干渉を気にせずに設計することができる。
Further, in the above description, as the second elevating part 6, a configuration in which the connecting member 33 of the second support part 3 is moved up and down in the vertical direction by one actuator is illustrated. With such a configuration, a plurality of sets of second contact support portions 31 and columns 32 can be integrally raised and lowered. However, the second elevating part 6 is not limited to such a configuration, and may have a configuration in which a plurality of sets of the second contact support portion 31 and the support column 32 are independently raised and lowered. In the case of this configuration, it is not necessary to provide the connecting member 33 in the second support portion 3, and the design can be performed without worrying about the interference of the first support portion 2 with the connecting member 23.
なお上述では、第1支持部2、第2支持部3、第3支持部4を備え、制御部9が第1支持モードから第2支持モードに切り替えた後、第3支持モードに切り替える構成を例示した。しかし、本発明を適用する上で、さらに細かなピッチで複数の支持部やそれらの上端の相対高さ変更する昇降部を備え、制御部にてより多段階で支持点数を増やしながらウエーハを支持させる構成としても良い。
In the above description, the first support unit 2, the second support unit 3, and the third support unit 4 are provided, and the control unit 9 switches from the first support mode to the second support mode and then switches to the third support mode. Illustrated. However, in applying the present invention, a plurality of support portions and elevating portions that change the relative heights of the upper ends thereof are provided at a finer pitch, and the control unit supports the wafer while increasing the number of support points in more stages. It may be configured to be made to.
(以下、国優で追加)
なお、この様な3段階以上の多段階で支持点数を増やしながらウエーハWを支え保持する高さを変更するモードを「第1昇降モード」と呼ぶ。 (Hereafter, added as a national actor)
The mode in which the height of supporting and holding the wafer W is changed while increasing the number of supporting points in such a multi-step of three or more steps is called a "first ascending / descending mode".
なお、この様な3段階以上の多段階で支持点数を増やしながらウエーハWを支え保持する高さを変更するモードを「第1昇降モード」と呼ぶ。 (Hereafter, added as a national actor)
The mode in which the height of supporting and holding the wafer W is changed while increasing the number of supporting points in such a multi-step of three or more steps is called a "first ascending / descending mode".
[第2の形態]
そして、本発明を具現化する上で、ウエーハ保持装置1の制御部9は、この第1昇降モードのほかに、詳細を下述する「第2昇降モード」を有し、第1昇降モードと第2昇降モードのいずれかを選択して実行する形態であっても良い。 [Second form]
In embodying the present invention, the control unit 9 of thewafer holding device 1 has, in addition to the first elevating mode, a "second elevating mode" described in detail below, which is referred to as the first elevating mode. It may be in the form of selecting and executing any of the second ascending / descending modes.
そして、本発明を具現化する上で、ウエーハ保持装置1の制御部9は、この第1昇降モードのほかに、詳細を下述する「第2昇降モード」を有し、第1昇降モードと第2昇降モードのいずれかを選択して実行する形態であっても良い。 [Second form]
In embodying the present invention, the control unit 9 of the
図6は、本発明を具現化する別の形態におけるウエーハ保持装置の一例を示す斜視図である。図6には、破線で示す位置に取り付けられていた第2支持部3の連結部33等が取り外されている状態が示されている。
FIG. 6 is a perspective view showing an example of a wafer holding device in another embodiment of the present invention. FIG. 6 shows a state in which the connecting portion 33 and the like of the second support portion 3 attached at the positions indicated by the broken lines are removed.
具体的には、ウエーハ保持装置1は、第2支持部3を着脱可能な構造とし、第2支持部3の取り付け状態に応じて、制御部9は第1昇降モードと第2昇降モードのいずれかを選択して実行する。より具体的には、制御部9は、第2支持部3が取り付けられているときは、第1昇降モードを実行し、第2支持部3が取り外されているときは、第2昇降モードを実行する
第2昇降モードは、第4支持モードと第5支持モードとを有し、第4支持モードにて受け取ったウエーハWを吸引保持したまま、第4支持モードから第5支持モードに切り替えるものである。 Specifically, thewafer holding device 1 has a structure in which the second support portion 3 is detachable, and the control unit 9 is in either the first elevating mode or the second elevating mode depending on the mounting state of the second support portion 3. Select and execute. More specifically, the control unit 9 executes the first elevating mode when the second support unit 3 is attached, and performs the second elevating mode when the second support unit 3 is removed. The second elevating mode to be executed has a fourth support mode and a fifth support mode, and switches from the fourth support mode to the fifth support mode while sucking and holding the wafer W received in the fourth support mode. Is.
第2昇降モードは、第4支持モードと第5支持モードとを有し、第4支持モードにて受け取ったウエーハWを吸引保持したまま、第4支持モードから第5支持モードに切り替えるものである。 Specifically, the
第4支持モードは、第3支持部4の上端の高さよりも上方に第1支持部2の上端を配置させるものである。
具体的には、第4支持モードでは、第1当接保持部21の上端の高さが、第3当接保持部41の上端の高さ(つまり、下段位置)よりも上方にある上段位置Hに配置するよう、第1昇降部5のアクチュエータを制御して、ウエーハWを支え保持する高さを変更する。 In the fourth support mode, the upper end of thefirst support portion 2 is arranged above the height of the upper end of the third support portion 4.
Specifically, in the fourth support mode, the height of the upper end of the firstcontact holding portion 21 is higher than the height of the upper end of the third contact holding portion 41 (that is, the lower position). The actuator of the first elevating part 5 is controlled so as to be arranged in H, and the height for supporting and holding the wafer W is changed.
具体的には、第4支持モードでは、第1当接保持部21の上端の高さが、第3当接保持部41の上端の高さ(つまり、下段位置)よりも上方にある上段位置Hに配置するよう、第1昇降部5のアクチュエータを制御して、ウエーハWを支え保持する高さを変更する。 In the fourth support mode, the upper end of the
Specifically, in the fourth support mode, the height of the upper end of the first
第5支持モードは、第1支持部2の上端の高さを、第3支持部4の上端の高さと同じ高さに配置させるものである。
具体的には、第5支持モードでは、第1当接保持部21の上端の高さが、第3当接保持部41の上端の高さと同じ高さ(つまり、下段位置)に配置するよう、第1昇降部5のアクチュエータを制御して、ウエーハWを支え保持する高さを変更する。 In the fifth support mode, the height of the upper end of thefirst support portion 2 is arranged at the same height as the height of the upper end of the third support portion 4.
Specifically, in the fifth support mode, the height of the upper end of the firstcontact holding portion 21 is arranged at the same height as the height of the upper end of the third contact holding portion 41 (that is, the lower position). , The height of supporting and holding the wafer W is changed by controlling the actuator of the first elevating unit 5.
具体的には、第5支持モードでは、第1当接保持部21の上端の高さが、第3当接保持部41の上端の高さと同じ高さ(つまり、下段位置)に配置するよう、第1昇降部5のアクチュエータを制御して、ウエーハWを支え保持する高さを変更する。 In the fifth support mode, the height of the upper end of the
Specifically, in the fifth support mode, the height of the upper end of the first
図7は、本発明を具現化する別の形態におけるウエーハ保持装置の一例を示す断面図である。図7(a)には、第2昇降モードで、上段位置HにてウエーハWを支持している様子が示されている。図7(b)には、第2昇降モードで、下段位置LにてウエーハWを支持している様子が示されている。
FIG. 7 is a cross-sectional view showing an example of a wafer holding device in another embodiment embodying the present invention. FIG. 7A shows how the wafer W is supported at the upper position H in the second ascending / descending mode. FIG. 7B shows how the wafer W is supported at the lower position L in the second ascending / descending mode.
具体的には、第2昇降モードに切り替える場合、作業者は、第2支持部3の第2当接支持部31ないし連結部33を第2昇降部6のロッド61から取り外し、制御部9に対して第2昇降モードを実行させる操作(例えば、スイッチ操作等)を行う。一方、第1昇降モードに切り替える場合は、作業者は、第2支持部3の第2当接支持部31ないし連結部33を第2昇降部6のロッド61に取り付け、制御部9に対して第1昇降モードを実行させる操作(例えば、スイッチ操作等)を行う。
Specifically, when switching to the second ascending / descending mode, the operator removes the second contact supporting portion 31 or the connecting portion 33 of the second supporting portion 3 from the rod 61 of the second elevating portion 6 to the control unit 9. On the other hand, an operation for executing the second ascending / descending mode (for example, a switch operation) is performed. On the other hand, when switching to the first elevating mode, the operator attaches the second contact support portion 31 or the connecting portion 33 of the second support portion 3 to the rod 61 of the second elevating portion 6 with respect to the control unit 9. An operation (for example, a switch operation) for executing the first ascending / descending mode is performed.
(変形例)
なお上述では、作業者が第2支持部3の連結部33を着脱し、手動で第1昇降モードと第2昇降モードの切り替えを行う構成を例示した。 (Modification example)
In the above description, the configuration in which the operator attaches / detaches the connectingportion 33 of the second support portion 3 and manually switches between the first elevating mode and the second elevating mode has been illustrated.
なお上述では、作業者が第2支持部3の連結部33を着脱し、手動で第1昇降モードと第2昇降モードの切り替えを行う構成を例示した。 (Modification example)
In the above description, the configuration in which the operator attaches / detaches the connecting
しかし、本発明を具現化する上で、作業者が第2支持部3の連結部33を着脱しつつ、自動的に第1昇降モードと第2昇降モードの切り替えを行う構成であっても良い。
具体的には、ウエーハ保持装置1は、第2支持部3を着脱可能な構造をしており、在席検出部7を備え、第2支持部を取り外し可能な構成とする。 However, in embodying the present invention, the operator may automatically switch between the first elevating mode and the second elevating mode while attaching and detaching the connectingportion 33 of the second support portion 3. ..
Specifically, thewafer holding device 1 has a structure in which the second support portion 3 can be attached and detached, includes a presence detection unit 7, and has a configuration in which the second support portion can be removed.
具体的には、ウエーハ保持装置1は、第2支持部3を着脱可能な構造をしており、在席検出部7を備え、第2支持部を取り外し可能な構成とする。 However, in embodying the present invention, the operator may automatically switch between the first elevating mode and the second elevating mode while attaching and detaching the connecting
Specifically, the
在席検出部7は、第2支持部3の取付け状態を検出するものである。
具体的には、在席検出部7は、第2支持部3の第2当接部31や支柱32が取り付けられている連結部33が、所定の位置に取り付けられているかどうかを検出するものである。
より具体的には、在席検出部7は、図1,3,6中の破線で示す様に、識別マーク71、撮像カメラ72、画像処理装置73等で構成されており、制御部9と接続されている。 The presence detection unit 7 detects the mounting state of thesecond support unit 3.
Specifically, the presence detection unit 7 detects whether or not the second contact portion 31 of thesecond support portion 3 and the connecting portion 33 to which the support column 32 is attached are attached at a predetermined position. Is.
More specifically, the presence detection unit 7 is composed of an identification mark 71, animage pickup camera 72, an image processing device 73, and the like, as shown by the broken lines in FIGS. It is connected.
具体的には、在席検出部7は、第2支持部3の第2当接部31や支柱32が取り付けられている連結部33が、所定の位置に取り付けられているかどうかを検出するものである。
より具体的には、在席検出部7は、図1,3,6中の破線で示す様に、識別マーク71、撮像カメラ72、画像処理装置73等で構成されており、制御部9と接続されている。 The presence detection unit 7 detects the mounting state of the
Specifically, the presence detection unit 7 detects whether or not the second contact portion 31 of the
More specifically, the presence detection unit 7 is composed of an identification mark 71, an
識別マーク71は、第2支持部3が所定の位置に取り付けられているかどうかを判別するためのものである。具体的には、識別マーク71は、第2支持部3の連結部33に付されている。より具体的には、識別マーク71は、2次元コードや所定の模様(ケガキや打刻したものでも良い)等が例示できる。
撮像カメラ72は、識別マーク71を撮像し、撮像した画像を外部に出力するものである。
画像処理装置73は、撮像カメラ72で撮像した画像を処理し、当該画像内に識別マーク71が含まれているかどうかを判別するものである。 The identification mark 71 is for determining whether or not thesecond support portion 3 is attached at a predetermined position. Specifically, the identification mark 71 is attached to the connecting portion 33 of the second support portion 3. More specifically, the identification mark 71 can be exemplified by a two-dimensional code, a predetermined pattern (may be an marking or an engraved one), or the like.
Theimage pickup camera 72 captures the identification mark 71 and outputs the captured image to the outside.
Theimage processing device 73 processes the image captured by the image pickup camera 72 and determines whether or not the identification mark 71 is included in the image.
撮像カメラ72は、識別マーク71を撮像し、撮像した画像を外部に出力するものである。
画像処理装置73は、撮像カメラ72で撮像した画像を処理し、当該画像内に識別マーク71が含まれているかどうかを判別するものである。 The identification mark 71 is for determining whether or not the
The
The
在席検出部7は、このような構成をしているため、識別マーク71が検出されれば、第2支持部3が取り付けられていると判別する。一方、識別マーク71が検出されなければ、第2支持部3が取り外されていると判別する。
Since the presence detection unit 7 has such a configuration, if the identification mark 71 is detected, it is determined that the second support unit 3 is attached. On the other hand, if the identification mark 71 is not detected, it is determined that the second support portion 3 has been removed.
そして、制御部9は、在席検出部7で検出した第2支持部3の取付け状態に応じて、第1昇降モードと第2昇降モードのいずれかを選択して実行する構成とする。
具体的には、制御部9は、在席検出部7で第2支持部3が取り付けられていると判別すれば、第1昇降モードを実行し、在席検出部7で第2支持部3が取り外されていると判別されれば、第2昇降モードを実行する。 Then, the control unit 9 is configured to select and execute either the first elevating mode or the second elevating mode according to the mounting state of thesecond support unit 3 detected by the presence detection unit 7.
Specifically, if the control unit 9 determines that thesecond support unit 3 is attached to the presence detection unit 7, the control unit 9 executes the first ascending / descending mode, and the presence detection unit 7 executes the second support unit 3 If it is determined that is removed, the second ascending / descending mode is executed.
具体的には、制御部9は、在席検出部7で第2支持部3が取り付けられていると判別すれば、第1昇降モードを実行し、在席検出部7で第2支持部3が取り外されていると判別されれば、第2昇降モードを実行する。 Then, the control unit 9 is configured to select and execute either the first elevating mode or the second elevating mode according to the mounting state of the
Specifically, if the control unit 9 determines that the
<動作フロー>
図8は、本発明を具現化する別の形態における動作フローの一例を示すフロー図である。 <Operation flow>
FIG. 8 is a flow chart showing an example of an operation flow in another embodiment embodying the present invention.
図8は、本発明を具現化する別の形態における動作フローの一例を示すフロー図である。 <Operation flow>
FIG. 8 is a flow chart showing an example of an operation flow in another embodiment embodying the present invention.
先ず作業者は、第2支持部3の連結部33を取り付け又は取り外し、取付け状態を確認する(ステップs10)。そして、第2支持部3が取り付けられていれば、制御部9は、上述の第1昇降モード(ステップs1~s5)を実行する。一方、第2支持部3が取り外されていれば、制御部9は、以下に示す第2昇降モード(ステップs21~s24)を実行する。
First, the operator attaches or removes the connecting portion 33 of the second support portion 3, and confirms the attached state (step s10). Then, if the second support unit 3 is attached, the control unit 9 executes the above-mentioned first elevating mode (steps s1 to s5). On the other hand, if the second support unit 3 is removed, the control unit 9 executes the second elevating mode (steps s21 to s24) shown below.
第2昇降モードでは、ウエーハ保持装置1は、ウエーハWの受け取りが可能であれば、制御部9を第4支持モード(上段位置)に切り替え、待機する(ステップs21)。
In the second ascending / descending mode, if the wafer W can be received, the wafer holding device 1 switches the control unit 9 to the fourth support mode (upper position) and stands by (step s21).
その後、ウエーハWを載置し(ステップs22)、ウエーハWの第1支持部位S1を吸引保持させる(ステップs23)。
After that, the wafer W is placed (step s22), and the first support portion S1 of the wafer W is sucked and held (step s23).
そして、第1昇降部5を制御して、第5支持モード(下段位置)へ切り替える(ステップs24)。なお、第4支持モード(上段位置)から第5支持モード(下段位置Lへ切り替えたときに、第3支持部位S3に負圧を生じさせてウエーハWを吸引保持させる。
Then, the first elevating part 5 is controlled to switch to the fifth support mode (lower position) (step s24). When switching from the fourth support mode (upper stage position) to the fifth support mode (lower stage position L), a negative pressure is generated in the third support portion S3 to suck and hold the wafer W.
その後、所望の処理や検査等を実行し(ステップs6)、処理等が終了したかどうかを判定する(ステップs7)。そして、処理等が終了していなければ、上述のステップs6を継続し、処理等が終了していれば一連のフローを終了する。
After that, a desired process, inspection, etc. is executed (step s6), and it is determined whether or not the process, etc. is completed (step s7). Then, if the processing or the like is not completed, the above-mentioned step s6 is continued, and if the processing or the like is completed, the series of flows is terminated.
この様な形態であれば、反りや変形を生じ易いウエーハを保持する際は、第1昇降モードを実行して確実に保持することができる。さらに、反りや変形の生じていないウエーハを保持する際は、第2昇降モードを実行して迅速に保持できるため、単位時間あたりのウエーハの処理枚数を増やすことができるので好ましい。
With such a form, when holding a wafer that is prone to warping or deformation, the first ascending / descending mode can be executed to reliably hold the wafer. Further, when holding a wafer that has not been warped or deformed, the second ascending / descending mode can be executed to quickly hold the wafer, which is preferable because the number of wafers processed per unit time can be increased.
なお上述のフローでは、ステップs10において、作業者が第2支持部3の取付け状態を判別(手動判別)する構成を例示した。しかし、ステップs10において、ウエーハ保持装置1は、在席検出部7を用いて識別マーク71を撮像カメラ72で撮像し、識別マーク71の有無を画像処理装置73で判別することで第2支持部3の取付け状態を判別(自動判別)する構成であっても良い。
In the above-mentioned flow, in step s10, the configuration in which the operator discriminates (manually discriminates) the mounting state of the second support portion 3 is illustrated. However, in step s10, the wafer holding device 1 uses the presence detection unit 7 to image the identification mark 71 with the image pickup camera 72, and the image processing device 73 determines the presence or absence of the identification mark 71 to determine the presence or absence of the identification mark 71. The configuration may be such that the mounting state of 3 is discriminated (automatically discriminated).
なお上述では、在席検出部7が識別マーク71や撮像カメラ72、画像処理装置73を備え、識別マーク71の有無で第2支持部3の取付け状態を判別する構成を例示した。
しかし、在席検出部7は、このような構成に限らず、センサ等により連結部33の着脱状体を検出し、着脱状態に応じてON/OFF信号を切り替えて出力する構成であっても良い。 In the above description, the presence detection unit 7 is provided with the identification mark 71, theimage pickup camera 72, and the image processing device 73, and the configuration in which the mounting state of the second support unit 3 is determined by the presence or absence of the identification mark 71 is illustrated.
However, the presence detection unit 7 is not limited to such a configuration, and may have a configuration in which the detachable body of the connectingportion 33 is detected by a sensor or the like and the ON / OFF signal is switched and output according to the detached state. good.
しかし、在席検出部7は、このような構成に限らず、センサ等により連結部33の着脱状体を検出し、着脱状態に応じてON/OFF信号を切り替えて出力する構成であっても良い。 In the above description, the presence detection unit 7 is provided with the identification mark 71, the
However, the presence detection unit 7 is not limited to such a configuration, and may have a configuration in which the detachable body of the connecting
なお上述では、ステップs24において、第4支持モード(上段位置)から第5支持モード(下段位置)へ切り替えたときに、第3支持部位S3に負圧を生じさせてウエーハWを吸引保持させる構成を例示した。このような構成であれば、ウエーハの保持が確実になるため好ましい。しかし、ウエーハWの反りや変形等が少なく、保持が確実にできる場合は、第1支持部位S1による吸引保持だけでも良い。
In the above description, when the fourth support mode (upper stage position) is switched to the fifth support mode (lower stage position) in step s24, a negative pressure is generated in the third support portion S3 to suck and hold the wafer W. Was illustrated. Such a configuration is preferable because the wafer can be reliably held. However, if the wafer W is less warped or deformed and can be reliably held, suction holding by the first support portion S1 may be sufficient.
[第3の形態]
なお上述では、第2支持部3を着脱し、第1昇降モードと第2昇降モードとを選択して切り替える形態を例示した。
しかし、本発明を具現化する上で、第2支持部3の着脱および第2昇降モードの具備は、必須の構成ではなく、第2支持部3を下段位置Lに固定した状態で、第1支持部2を上段位置H/下段位置Lの2段階に切り替えてウエーハWを昇降させる「第3昇降モード」を有し、第1昇降モードと第3昇降モードのいずれかを選択して実行する形態であっても良い。 [Third form]
In the above description, a mode in which thesecond support portion 3 is attached / detached and the first elevating mode and the second elevating mode are selected and switched is illustrated.
However, in embodying the present invention, the attachment / detachment of thesecond support portion 3 and the provision of the second elevating mode are not essential configurations, and the first support portion 3 is fixed at the lower position L. It has a "third ascending / descending mode" in which the support portion 2 is switched between the upper position H and the lower position L to elevate and lower the wafer W, and either the first elevating mode or the third elevating mode is selected and executed. It may be in the form.
なお上述では、第2支持部3を着脱し、第1昇降モードと第2昇降モードとを選択して切り替える形態を例示した。
しかし、本発明を具現化する上で、第2支持部3の着脱および第2昇降モードの具備は、必須の構成ではなく、第2支持部3を下段位置Lに固定した状態で、第1支持部2を上段位置H/下段位置Lの2段階に切り替えてウエーハWを昇降させる「第3昇降モード」を有し、第1昇降モードと第3昇降モードのいずれかを選択して実行する形態であっても良い。 [Third form]
In the above description, a mode in which the
However, in embodying the present invention, the attachment / detachment of the
第3昇降モードは、第6支持モードと第7支持モードとを有し、第6支持モードにて受け取ったウエーハWを吸引保持したまま、第6支持モードから第7支持モードに切り替えるものである。なお、第3昇降モードは、第1昇降モードと同様に、(図2に示すように)第2支持部3が取り付けられた状態で実行する。
The third ascending / descending mode has a sixth support mode and a seventh support mode, and switches from the sixth support mode to the seventh support mode while sucking and holding the wafer W received in the sixth support mode. .. The third elevating mode is executed in a state where the second support portion 3 is attached (as shown in FIG. 2), similarly to the first elevating mode.
第6支持モードは、第2支持部3の上端および第3支持部4の上端の高さよりも上方に第1支持部の上端を配置させるものである。
具体的には、第6支持モードでは、第2当接保持部31の上端の高さと第3当接保持部41の上端の高さを同じ高さ(つまり、下段位置L)に配置しておき、これらよりも上方にある上段位置Hに、第1当接保持部21の上端の高さが配置されるよう、第1昇降部5のアクチュエータを制御して、ウエーハWを支え保持する高さを変更する。 In the sixth support mode, the upper end of the first support portion is arranged above the heights of the upper end of thesecond support portion 3 and the upper end of the third support portion 4.
Specifically, in the sixth support mode, the height of the upper end of the second contact holding portion 31 and the height of the upper end of the thirdcontact holding portion 41 are arranged at the same height (that is, the lower position L). The height that supports and holds the wafer W by controlling the actuator of the first elevating part 5 so that the height of the upper end of the first contact holding part 21 is arranged at the upper position H above these. Change the height.
具体的には、第6支持モードでは、第2当接保持部31の上端の高さと第3当接保持部41の上端の高さを同じ高さ(つまり、下段位置L)に配置しておき、これらよりも上方にある上段位置Hに、第1当接保持部21の上端の高さが配置されるよう、第1昇降部5のアクチュエータを制御して、ウエーハWを支え保持する高さを変更する。 In the sixth support mode, the upper end of the first support portion is arranged above the heights of the upper end of the
Specifically, in the sixth support mode, the height of the upper end of the second contact holding portion 31 and the height of the upper end of the third
第7支持モードは、第1支持部3の上端の高さを、第2支持部4の上端および第3支持部4の上端の高さと同じ高さ(つまり、下段位置L)に配置させるものである。
具体的には、第7支持モードでは、第1当接保持部21の上端の高さが、第2当接保持部31の上端および第3当接保持部41の上端の高さと同じ高さ(つまり、下段位置L)に配置するよう、第1昇降部5のアクチュエータを制御して、ウエーハWを支え保持する高さを変更する。 In the seventh support mode, the height of the upper end of thefirst support portion 3 is arranged at the same height as the height of the upper end of the second support portion 4 and the upper end of the third support portion 4 (that is, the lower position L). Is.
Specifically, in the seventh support mode, the height of the upper end of the firstcontact holding portion 21 is the same as the height of the upper end of the second contact holding portion 31 and the upper end of the third contact holding portion 41. (That is, the height at which the wafer W is supported and held is changed by controlling the actuator of the first elevating unit 5 so that the wafer W is arranged at the lower position L).
具体的には、第7支持モードでは、第1当接保持部21の上端の高さが、第2当接保持部31の上端および第3当接保持部41の上端の高さと同じ高さ(つまり、下段位置L)に配置するよう、第1昇降部5のアクチュエータを制御して、ウエーハWを支え保持する高さを変更する。 In the seventh support mode, the height of the upper end of the
Specifically, in the seventh support mode, the height of the upper end of the first
図9は、本発明を具現化するさらに別の形態におけるウエーハ保持装置の一例を示す断面図である。図9(a)には、第3昇降モードで、上段位置HにてウエーハWを支持している様子が示されている。図9(b)には、第3昇降モードで、下段位置LにてウエーハWを支持している様子が示されている。
FIG. 9 is a cross-sectional view showing an example of a wafer holding device in still another embodiment embodying the present invention. FIG. 9A shows how the wafer W is supported at the upper position H in the third ascending / descending mode. FIG. 9B shows how the wafer W is supported at the lower position L in the third ascending / descending mode.
<動作フロー>
図10は、本発明を具現化するさらに別の形態における動作フローの一例を示すフロー図である。 <Operation flow>
FIG. 10 is a flow chart showing an example of an operation flow in still another embodiment embodying the present invention.
図10は、本発明を具現化するさらに別の形態における動作フローの一例を示すフロー図である。 <Operation flow>
FIG. 10 is a flow chart showing an example of an operation flow in still another embodiment embodying the present invention.
先ず作業者は、第2支持部3の連結部33が取り付いている状態において、第1昇降モードと第3昇降モードのいずれでウエーハWを昇降させるかを選択する(ステップs15)。そして、制御部9は、いずれの昇降モードが選択されているかを判別し(ステップs16)、第1昇降モードが選択されていれば、上述と同様にステップs1~s5を実行する。一方、第3昇降モードが選択されていれば、以下に示す第3昇降モード(ステップs31~s34)を実行する。
First, the operator selects whether to raise or lower the wafer W in the first elevating mode or the third elevating mode in the state where the connecting portion 33 of the second support portion 3 is attached (step s15). Then, the control unit 9 determines which elevating mode is selected (step s16), and if the first elevating mode is selected, executes steps s1 to s5 in the same manner as described above. On the other hand, if the third ascending / descending mode is selected, the third ascending / descending mode (steps s31 to s34) shown below is executed.
第3昇降モードでは、ウエーハ保持装置1は、ウエーハWの受け取りが可能であれば、制御部9を第6支持モード(上段位置)に切り替え、待機する(ステップs31)。
In the third ascending / descending mode, if the wafer W can be received, the wafer holding device 1 switches the control unit 9 to the sixth support mode (upper position) and stands by (step s31).
その後、ウエーハWを載置し(ステップs32)、ウエーハWの第1支持部位S1を吸引保持させる(ステップs33)。
After that, the wafer W is placed (step s32), and the first support portion S1 of the wafer W is sucked and held (step s33).
そして、第1昇降部5を制御して、第7支持モード(下段位置)へ切り替える(ステップs34)。なお、第6支持モード(上段位置)から第7支持モード(下段位置)へ切り替えたときに、第2支持部位S2や第3支持部位S3に負圧を生じさせてウエーハWを吸引保持させる。
Then, the first elevating part 5 is controlled to switch to the seventh support mode (lower position) (step s34). When the sixth support mode (upper stage position) is switched to the seventh support mode (lower stage position), a negative pressure is generated in the second support portion S2 and the third support portion S3 to suck and hold the wafer W.
その後、所望の処理や検査等を実行し(ステップs6)、処理等が終了したかどうかを判定する(ステップs7)。そして、処理等が終了していなければ、上述のステップs6を継続し、処理等が終了していれば一連のフローを終了する。
After that, a desired process, inspection, etc. is executed (step s6), and it is determined whether or not the process, etc. is completed (step s7). Then, if the processing or the like is not completed, the above-mentioned step s6 is continued, and if the processing or the like is completed, the series of flows is terminated.
この様な形態であれば、反りや変形を生じ易いウエーハを保持する際は、第1昇降モードを実行して確実に保持することができる。さらに、反りや変形の生じていないウエーハを保持する際は、第3昇降モードを実行して迅速に保持できるため、単位時間あたりのウエーハの処理枚数を増やすことができるので好ましい。
With such a form, when holding a wafer that is prone to warping or deformation, the first ascending / descending mode can be executed to reliably hold the wafer. Further, when holding a wafer that has not been warped or deformed, the third ascending / descending mode can be executed to quickly hold the wafer, which is preferable because the number of wafers processed per unit time can be increased.
なお上述のフローでは、ステップs15にて作業者が第1昇降モードと第3昇降モードのいずれでウエーハWを昇降させるかを選択し、ステップs16にていずれの昇降モードが選択されているかを判別する構成を例示した。
しかし、第1昇降モードを実行するか、第3実行モードを実行するかは、作業者の操作等により選択する構成であっても良いが、ハンドリングするウエーハWの品種情報(いわゆる、レシピファイル等)と紐付けて登録しておき、制御部9がステップs15にてレシピ情報を受け取り、ステップs16にて昇降モードを判別する構成であっても良い。つまり、保持するウエーハWの種類(つまり、変形しやすいかどうか)により、第1昇降モードを用いるか、第3昇降モードを用いるか作業者が判断しても良いし、予め登録したレシピファイルに基づいて自動的に切り替えする構成であっても良い。 In the above flow, in step s15, the operator selects whether to raise or lower the wafer W in the first elevating mode or the third elevating mode, and in step s16, it is determined which elevating mode is selected. The configuration to be used is illustrated.
However, whether to execute the first elevating mode or the third execution mode may be selected by the operation of the operator or the like, but the type information of the wafer W to be handled (so-called recipe file, etc.) ), The control unit 9 receives the recipe information in step s15, and the elevating mode may be determined in step s16. That is, the operator may decide whether to use the first elevating mode or the third elevating mode depending on the type of wafer W to be held (that is, whether or not it is easily deformed), or the recipe file registered in advance may be used. It may be configured to automatically switch based on the above.
しかし、第1昇降モードを実行するか、第3実行モードを実行するかは、作業者の操作等により選択する構成であっても良いが、ハンドリングするウエーハWの品種情報(いわゆる、レシピファイル等)と紐付けて登録しておき、制御部9がステップs15にてレシピ情報を受け取り、ステップs16にて昇降モードを判別する構成であっても良い。つまり、保持するウエーハWの種類(つまり、変形しやすいかどうか)により、第1昇降モードを用いるか、第3昇降モードを用いるか作業者が判断しても良いし、予め登録したレシピファイルに基づいて自動的に切り替えする構成であっても良い。 In the above flow, in step s15, the operator selects whether to raise or lower the wafer W in the first elevating mode or the third elevating mode, and in step s16, it is determined which elevating mode is selected. The configuration to be used is illustrated.
However, whether to execute the first elevating mode or the third execution mode may be selected by the operation of the operator or the like, but the type information of the wafer W to be handled (so-called recipe file, etc.) ), The control unit 9 receives the recipe information in step s15, and the elevating mode may be determined in step s16. That is, the operator may decide whether to use the first elevating mode or the third elevating mode depending on the type of wafer W to be held (that is, whether or not it is easily deformed), or the recipe file registered in advance may be used. It may be configured to automatically switch based on the above.
制御部9が、自動的に昇降モードを切り替える構成であれば、作業者が第2支持部3を着脱する手間が省けるので好ましい。さらに、作業者による昇降モードの設定間違いを防ぐことができるので、より好ましい。
If the control unit 9 is configured to automatically switch the elevating mode, it is preferable because the operator can save the trouble of attaching and detaching the second support unit 3. Further, it is more preferable because it is possible to prevent the operator from making a mistake in setting the elevating mode.
なお上述では、ステップs34において、第6支持モード(上段位置)から第7支持モード(下段位置)へ切り替えたときに、第2支持部位S2や第3支持部位S3に負圧を生じさせてウエーハWを吸引保持させる構成を例示した。このような構成であれば、ウエーハの保持が確実になるため好ましい。しかし、ウエーハWの反りや変形等が少なく、保持が確実にできる場合は、第1支持部位S1による吸引保持だけでも良い。
In the above description, when the sixth support mode (upper stage position) is switched to the seventh support mode (lower stage position) in step s34, a negative pressure is generated in the second support portion S2 and the third support portion S3 to generate a wafer. The configuration in which W is sucked and held is illustrated. Such a configuration is preferable because the wafer can be reliably held. However, if the wafer W is less warped or deformed and can be reliably held, suction holding by the first support portion S1 may be sufficient.
なお上述では、第2支持部3を下段位置Lに固定しておく構成を例示したが、この様な構成に限らず、第1支持部2と第2支持部3とを連動させて昇降させ、第1当接保持部21と第3当接保持部41とを共に、上段位置H/下段位置Lに切り替える構成であっても良い。
なお上述では、制御部9は、第1昇降モードと、第2昇降モードまたは第3昇降モードを有する構成を例示したが、第1昇降モードと第2昇降モードと第3昇降モードとを有し、作業者による段取り替えや操作により第2昇降モードを実行したり、作業者の操作により第3昇降モードを実行したり、ウエーハWの品種情報に基づいて自動的に第3昇降モードを実行したりする構成であっても良い。具体的には、図8に示した動作フローのステップs11において、第2支持部3が取り付けられていると判別した後、図10に示した動作フロー(ステップs15以降)を実行する構成が例示できる。 In the above description, the configuration in which thesecond support portion 3 is fixed at the lower position L has been illustrated, but the configuration is not limited to this, and the first support portion 2 and the second support portion 3 are moved up and down in conjunction with each other. The first contact holding portion 21 and the third contact holding portion 41 may both be switched to the upper position H / lower position L.
In the above description, the control unit 9 exemplifies a configuration having a first elevating mode and a second elevating mode or a third elevating mode, but has a first elevating mode, a second elevating mode, and a third elevating mode. , The second ascending / descending mode is executed by the setup change or operation by the operator, the third ascending / descending mode is executed by the operator's operation, and the third ascending / descending mode is automatically executed based on the wafer W type information. It may be configured to be used. Specifically, in step s11 of the operation flow shown in FIG. 8, a configuration in which the operation flow (step s15 or later) shown in FIG. 10 is executed after determining that thesecond support portion 3 is attached is exemplified. can.
なお上述では、制御部9は、第1昇降モードと、第2昇降モードまたは第3昇降モードを有する構成を例示したが、第1昇降モードと第2昇降モードと第3昇降モードとを有し、作業者による段取り替えや操作により第2昇降モードを実行したり、作業者の操作により第3昇降モードを実行したり、ウエーハWの品種情報に基づいて自動的に第3昇降モードを実行したりする構成であっても良い。具体的には、図8に示した動作フローのステップs11において、第2支持部3が取り付けられていると判別した後、図10に示した動作フロー(ステップs15以降)を実行する構成が例示できる。 In the above description, the configuration in which the
In the above description, the control unit 9 exemplifies a configuration having a first elevating mode and a second elevating mode or a third elevating mode, but has a first elevating mode, a second elevating mode, and a third elevating mode. , The second ascending / descending mode is executed by the setup change or operation by the operator, the third ascending / descending mode is executed by the operator's operation, and the third ascending / descending mode is automatically executed based on the wafer W type information. It may be configured to be used. Specifically, in step s11 of the operation flow shown in FIG. 8, a configuration in which the operation flow (step s15 or later) shown in FIG. 10 is executed after determining that the
1 ウエーハ保持装置
2 第1支持部
3 第2支持部
4 第3支持部
5 第1昇降部
6 第2昇降部
7 在席検出部
8 負圧吸引部
9 制御部
21 第1当接保持部
22 支柱
23 連結部材
31 第2当接保持部
32 支柱
33 連結部材
41 第3当接保持部
42 支柱
43 連結部材
51 ロッド
52 本体
61 ロッド
62 本体
71 識別マーク
72 撮像カメラ
73 画像処理装置
W ウエーハ
R 接触許容領域
S1 第1支持部位
S2 第2支持部位
S3 第3支持部位 1Wafer holding device 2 1st support 3 2nd support 4 3rd support 5 1st elevating part 6 2nd elevating part 7 Seating detection part 8 Negative pressure suction part 9 Control part 21 1st contact holding part 22 Support column 23 Connecting member 31 Second contact holding part 32 Support column 33 Connecting member 41 Third contact holding part 42 Support column 43 Connecting member 51 Rod 52 Main body 61 Rod 62 Main body 71 Identification mark 72 Imaging camera 73 Image processing device W Wafer R contact Allowable area S1 1st support site S2 2nd support site S3 3rd support site
2 第1支持部
3 第2支持部
4 第3支持部
5 第1昇降部
6 第2昇降部
7 在席検出部
8 負圧吸引部
9 制御部
21 第1当接保持部
22 支柱
23 連結部材
31 第2当接保持部
32 支柱
33 連結部材
41 第3当接保持部
42 支柱
43 連結部材
51 ロッド
52 本体
61 ロッド
62 本体
71 識別マーク
72 撮像カメラ
73 画像処理装置
W ウエーハ
R 接触許容領域
S1 第1支持部位
S2 第2支持部位
S3 第3支持部位 1
Claims (8)
- ウエーハを水平状態で受け取り、所定の姿勢で保持するウエーハ保持装置であって、
前記ウエーハの外周下部に設定された接触許容領域のうち、当該ウエーハの中心を取り囲むように少なくとも3ヶ所に振り分けて設定された第1支持部位を、下方から支える第1支持部と、
前記接触許容領域のうち、前記第1支持部の間を補う位置に設定された第2支持部位を、下方から支える第2支持部と、
前記接触許容領域のうち、前記第1支持部および前記第2支持部の間を補う位置に設定された第3支持部位を、下方から支える第3支持部と、
前記第1支持部の上端と前記第2支持部の上端との相対高さを変更する第1昇降部と、
前記第2支持部の上端と前記第3支持部の上端との相対高さを変更する第2昇降部と、
前記第1支持部位に負圧を生じさせて前記ウエーハを吸引保持する負圧吸引部と、
前記第1昇降部および前記第2昇降部における前記相対高さの変更と、前記負圧吸引部による吸引保持または解除の切替を制御する制御部を備え、
前記制御部は、
前記第2支持部の上端および前記第3支持部の上端の高さよりも上方に前記第1支持部の上端を配置させる、第1支持モードと、
前記第3支持部の上端の高さよりも上方で、前記第1支持部の上端と前記第2支持部の上端とを同じ高さに配置させる、第2支持モードと、
前記第1支持部の上端および前記第2支持部の上端の高さを、前記第3支持部の上端の高さと同じ高さに配置させる、第3支持モードとを少なくとも有し、
前記第1支持モードにて受け取った前記ウエーハを吸引保持したまま、当該第1支持モードから前記第2支持モードに切り替えた後、前記第3支持モードに切り替える
ことを特徴とする、ウエーハ保持装置。 A wafer holding device that receives a wafer in a horizontal position and holds it in a predetermined posture.
Of the contact allowable area set in the lower part of the outer circumference of the wafer, the first support portion that supports the first support portion that is divided and set in at least three places so as to surround the center of the wafer is supported from below.
A second support portion that supports a second support portion set at a position that supplements between the first support portions in the contact allowable region from below, and a second support portion.
A third support portion that supports a third support portion set at a position that complements between the first support portion and the second support portion in the contact allowable region from below, and a third support portion.
A first elevating part that changes the relative height between the upper end of the first support part and the upper end of the second support part, and
A second elevating part that changes the relative height between the upper end of the second support part and the upper end of the third support part, and
A negative pressure suction unit that generates a negative pressure in the first support portion to suck and hold the wafer, and a negative pressure suction unit.
A control unit for controlling the change of the relative height in the first elevating part and the second elevating part and switching of suction holding or release by the negative pressure suction part is provided.
The control unit
A first support mode in which the upper end of the first support portion is arranged above the heights of the upper end of the second support portion and the upper end of the third support portion.
A second support mode in which the upper end of the first support portion and the upper end of the second support portion are arranged at the same height above the height of the upper end of the third support portion.
It has at least a third support mode in which the heights of the upper end of the first support portion and the upper end of the second support portion are arranged at the same height as the height of the upper end of the third support portion.
A wafer holding device, characterized in that, while sucking and holding the wafer received in the first support mode, the wafer holding mode is switched from the first support mode to the second support mode and then switched to the third support mode. - 前記第3支持部位は、保持対象である前記ウエーハの外縁形状に沿った円弧状に設定されていることを特徴とする、請求項1に記載のウエーハ保持装置。 The wafer holding device according to claim 1, wherein the third support portion is set in an arc shape along the outer edge shape of the wafer to be held.
- 前記負圧吸引部は、前記第2支持部位にも負圧を生じさせて前記ウエーハを吸引保持することを特徴とする、請求項1又は請求項2に記載のウエーハ保持装置。 The wafer holding device according to claim 1 or 2, wherein the negative pressure suction unit also generates a negative pressure in the second support portion to suck and hold the wafer.
- 前記負圧吸引部は、前記第3支持部位にも負圧を生じさせて前記ウエーハを吸引保持することを特徴とする、請求項3に記載のウエーハ保持装置。 The wafer holding device according to claim 3, wherein the negative pressure suction unit also generates a negative pressure in the third support portion to suck and hold the wafer.
- ウエーハを水平状態で受け取り、所定の姿勢で保持するウエーハ保持装置であって、
前記ウエーハの外周下部に設定された接触許容領域のうち、当該ウエーハの中心を取り囲むように少なくとも3ヶ所に振り分けて設定された第1支持部位を、下方から支える第1支持部と、
前記接触許容領域のうち、前記第1支持部の間を補う位置に設定された第2支持部位を、下方から支える第2支持部と、
前記接触許容領域のうち、前記第1支持部および前記第2支持部の間を補う位置に設定された第3支持部位を、下方から支える第3支持部と、
前記第1支持部の上端と前記第2支持部の上端との相対高さを変更する第1昇降部と、
前記第2支持部の上端と前記第3支持部の上端との相対高さを変更する第2昇降部と、
前記第1支持部位に負圧を生じさせて前記ウエーハを吸引保持する負圧吸引部と、
前記第1昇降部および前記第2昇降部における前記相対高さの変更と、前記負圧吸引部による吸引保持または解除の切替を制御する制御部を備え、
前記制御部は、第1昇降モードと、第2昇降モードとを少なくとも有し、
前記第1昇降モードは、
前記第2支持部の上端および前記第3支持部の上端の高さよりも上方に前記第1支持部の上端を配置させる、第1支持モードと、
前記第3支持部の上端の高さよりも上方で、前記第1支持部の上端と前記第2支持部の上端とを同じ高さに配置させる、第2支持モードと、
前記第1支持部の上端および前記第2支持部の上端の高さを、前記第3支持部の上端の高さと同じ高さに配置させる、第3支持モードとを少なくとも有し、
前記第1支持モードにて受け取った前記ウエーハを吸引保持したまま、当該第1支持モードから前記第2支持モードに切り替えた後、前記第3支持モードに切り替え、
前記第2昇降モードは、
前記第3支持部の上端の高さよりも上方に前記第1支持部の上端を配置させる、第4支持モードと、
前記第1支持部の上端の高さを、前記第3支持部の上端の高さと同じ高さに配置させる、第5支持モードとを有し、
前記第4支持モードにて受け取った前記ウエーハを吸引保持したまま、当該第4支持モードから前記第5支持モードに切り替え、
前記制御部は、前記第1昇降モードと前記第2昇降モードのいずれかを選択して実行する
ことを特徴とする、ウエーハ保持装置。 A wafer holding device that receives a wafer in a horizontal position and holds it in a predetermined posture.
Of the contact allowable area set in the lower part of the outer circumference of the wafer, the first support portion that supports the first support portion that is divided and set in at least three places so as to surround the center of the wafer is supported from below.
A second support portion that supports a second support portion set at a position that complements the space between the first support portions in the contact allowable region from below, and a second support portion.
A third support portion that supports a third support portion set at a position that complements between the first support portion and the second support portion in the contact allowable region from below, and a third support portion.
A first elevating part that changes the relative height between the upper end of the first support part and the upper end of the second support part, and
A second elevating part that changes the relative height between the upper end of the second support part and the upper end of the third support part, and
A negative pressure suction unit that generates a negative pressure in the first support portion to suck and hold the wafer, and a negative pressure suction unit.
A control unit for controlling the change of the relative height in the first elevating part and the second elevating part and switching of suction holding or release by the negative pressure suction part is provided.
The control unit has at least a first elevating mode and a second elevating mode.
The first ascending / descending mode is
A first support mode in which the upper end of the first support portion is arranged above the heights of the upper end of the second support portion and the upper end of the third support portion.
A second support mode in which the upper end of the first support portion and the upper end of the second support portion are arranged at the same height above the height of the upper end of the third support portion.
It has at least a third support mode in which the heights of the upper end of the first support portion and the upper end of the second support portion are arranged at the same height as the height of the upper end of the third support portion.
While sucking and holding the wafer received in the first support mode, the first support mode is switched to the second support mode, and then the third support mode is switched to.
The second ascending / descending mode is
A fourth support mode in which the upper end of the first support portion is arranged above the height of the upper end of the third support portion.
It has a fifth support mode in which the height of the upper end of the first support portion is arranged at the same height as the height of the upper end of the third support portion.
While sucking and holding the wafer received in the fourth support mode, the fourth support mode is switched to the fifth support mode.
The wafer holding device is characterized in that the control unit selects and executes either the first elevating mode or the second elevating mode. - 前記第2支持部は、着脱可能な構造をしており、
前記第2支持部の取付け状態を検出する在席検出部を備え、
前記制御部は、
前記在席検出部で前記第2支持部の取付けが検出されれば、前記第1昇降モードを実行し、
前記在席検出部で前記第2支持部の取外しが検出されれば、前記第2昇降モードを実行することを特徴とする、請求項5に記載のウエーハ保持装置。 The second support portion has a removable structure and has a removable structure.
A presence detection unit for detecting the mounting state of the second support portion is provided.
The control unit
If the presence detection unit detects that the second support portion is attached, the first ascending / descending mode is executed.
The wafer holding device according to claim 5, wherein if the presence detection unit detects the removal of the second support unit, the second ascending / descending mode is executed. - ウエーハを水平状態で受け取り、所定の姿勢で保持するウエーハ保持装置であって、
前記ウエーハの外周下部に設定された接触許容領域のうち、当該ウエーハの中心を取り囲むように少なくとも3ヶ所に振り分けて設定された第1支持部位を、下方から支える第1支持部と、
前記接触許容領域のうち、前記第1支持部の間を補う位置に設定された第2支持部位を、下方から支える第2支持部と、
前記接触許容領域のうち、前記第1支持部および前記第2支持部の間を補う位置に設定された第3支持部位を、下方から支える第3支持部と、
前記第1支持部の上端と前記第2支持部の上端との相対高さを変更する第1昇降部と、
前記第2支持部の上端と前記第3支持部の上端との相対高さを変更する第2昇降部と、
前記第1支持部位に負圧を生じさせて前記ウエーハを吸引保持する負圧吸引部と、
前記第1昇降部および前記第2昇降部における前記相対高さの変更と、前記負圧吸引部による吸引保持または解除の切替を制御する制御部を備え、
前記制御部は、1昇降モードと、第3昇降モードとを少なくとも有し、
前記第1昇降モードは、
前記第2支持部の上端および前記第3支持部の上端の高さよりも上方に前記第1支持部の上端を配置させる、第1支持モードと、
前記第3支持部の上端の高さよりも上方で、前記第1支持部の上端と前記第2支持部の上端とを同じ高さに配置させる、第2支持モードと、
前記第1支持部の上端および前記第2支持部の上端の高さを、前記第3支持部の上端の高さと同じ高さに配置させる、第3支持モードとを少なくとも有し、
前記第1支持モードにて受け取った前記ウエーハを吸引保持したまま、当該第1支持モードから前記第2支持モードに切り替えた後、前記第3支持モードに切り替え、
前記第3昇降モードは、
前記第2支持部の上端および前記第3支持部の上端の高さよりも上方に前記第1支持部の上端を配置させる、第6支持モードと、
前記第1支持部の上端の高さを、前記第2支持部の上端および前記第3支持部の上端の高さと同じ高さに配置させる、第7支持モードとを有し、
前記第6支持モードにて受け取った前記ウエーハを吸引保持したまま、当該第6支持モードから前記第7支持モードに切り替え、
前記制御部は、前記第1昇降モードと前記第3昇降モードのいずれかを選択して実行することを特徴とする、請求項5に記載のウエーハ保持装置。 A wafer holding device that receives a wafer in a horizontal position and holds it in a predetermined posture.
Of the contact allowable area set in the lower part of the outer circumference of the wafer, the first support portion that supports the first support portion that is divided and set in at least three places so as to surround the center of the wafer is supported from below.
A second support portion that supports a second support portion set at a position that supplements between the first support portions in the contact allowable region from below, and a second support portion.
A third support portion that supports a third support portion set at a position that complements between the first support portion and the second support portion in the contact allowable region from below, and a third support portion.
A first elevating part that changes the relative height between the upper end of the first support part and the upper end of the second support part, and
A second elevating part that changes the relative height between the upper end of the second support part and the upper end of the third support part, and
A negative pressure suction unit that generates a negative pressure in the first support portion to suck and hold the wafer, and a negative pressure suction unit.
A control unit for controlling the change of the relative height in the first elevating part and the second elevating part and switching of suction holding or release by the negative pressure suction part is provided.
The control unit has at least one elevating mode and a third elevating mode.
The first ascending / descending mode is
A first support mode in which the upper end of the first support portion is arranged above the heights of the upper end of the second support portion and the upper end of the third support portion.
A second support mode in which the upper end of the first support portion and the upper end of the second support portion are arranged at the same height above the height of the upper end of the third support portion.
It has at least a third support mode in which the heights of the upper end of the first support portion and the upper end of the second support portion are arranged at the same height as the height of the upper end of the third support portion.
While sucking and holding the wafer received in the first support mode, the first support mode is switched to the second support mode, and then the third support mode is switched to.
The third ascending / descending mode is
A sixth support mode in which the upper end of the first support portion is arranged above the heights of the upper end of the second support portion and the upper end of the third support portion.
It has a seventh support mode in which the height of the upper end of the first support portion is arranged at the same height as the height of the upper end of the second support portion and the upper end of the third support portion.
While sucking and holding the wafer received in the 6th support mode, the 6th support mode is switched to the 7th support mode.
The wafer holding device according to claim 5, wherein the control unit selects and executes either the first elevating mode or the third elevating mode. - 前記負圧吸引部は、前記第3支持部位にも負圧を生じさせて前記ウエーハを吸引保持することを特徴とする、請求項5~7のいずれかに記載のウエーハ保持装置。 The wafer holding device according to any one of claims 5 to 7, wherein the negative pressure suction unit also generates a negative pressure in the third support portion to suck and hold the wafer.
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CN202180088991.1A CN116711061A (en) | 2021-01-15 | 2021-12-16 | Wafer holding device |
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JP2021201876A JP2022109874A (en) | 2021-01-15 | 2021-12-13 | Wafer holding device |
JP2021-201876 | 2021-12-13 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10335437A (en) * | 1997-05-27 | 1998-12-18 | Dainippon Screen Mfg Co Ltd | Wafer processor |
JP2010219190A (en) * | 2009-03-16 | 2010-09-30 | Dainippon Printing Co Ltd | Thin film forming apparatus and thin film forming method |
CN110943021A (en) * | 2018-09-21 | 2020-03-31 | 上海微电子装备(集团)股份有限公司 | Pre-alignment device and method |
-
2021
- 2021-12-16 WO PCT/JP2021/046437 patent/WO2022153774A1/en active Application Filing
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2022
- 2022-01-11 TW TW111101108A patent/TW202232652A/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10335437A (en) * | 1997-05-27 | 1998-12-18 | Dainippon Screen Mfg Co Ltd | Wafer processor |
JP2010219190A (en) * | 2009-03-16 | 2010-09-30 | Dainippon Printing Co Ltd | Thin film forming apparatus and thin film forming method |
CN110943021A (en) * | 2018-09-21 | 2020-03-31 | 上海微电子装备(集团)股份有限公司 | Pre-alignment device and method |
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