WO2022151770A1 - 麦克风部件及其制作方法 - Google Patents

麦克风部件及其制作方法 Download PDF

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Publication number
WO2022151770A1
WO2022151770A1 PCT/CN2021/122367 CN2021122367W WO2022151770A1 WO 2022151770 A1 WO2022151770 A1 WO 2022151770A1 CN 2021122367 W CN2021122367 W CN 2021122367W WO 2022151770 A1 WO2022151770 A1 WO 2022151770A1
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Prior art keywords
microphone component
polysilicon
diaphragm
polysilicon diaphragm
manufacturing
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PCT/CN2021/122367
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English (en)
French (fr)
Inventor
傅思宇
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绍兴中芯集成电路制造股份有限公司
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Publication of WO2022151770A1 publication Critical patent/WO2022151770A1/zh

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

Definitions

  • the invention relates to the field of electronic technology, in particular to a microphone component and a manufacturing method thereof.
  • Microphones are widely used in mobile phones, digital cameras, notebook computers, hearing aids and other electronic products.
  • the micro microphone is showing the development trend of miniaturization, low cost, high precision and integration.
  • the microphone formed by the traditional assembly method is not only large in size, but also has low precision, so it is difficult to meet the above development trend.
  • silicon miniature microphones formed based on CMOS technology and MEMS technology can achieve high-precision mass production with the help of the powerful infrastructure of integrated circuit (IC) technology, and have the advantages of small size, low cost and high precision.
  • the silicon miniature microphone formed based on the CMOS process and the MEMS process can also realize the monolithic integration with the interface circuit, effectively suppressing the influence of the parasitics introduced by the lead interconnection and packaging on the performance of the microphone. Therefore, silicon miniature microphones formed based on CMOS technology and MEMS technology have become the mainstream of the development of miniature microphones.
  • silicon miniature microphones mainly include three types: piezoelectric, piezoresistive and capacitive.
  • the condenser silicon miniature microphone is the most widely used, because the condenser silicon miniature microphone has the advantages of high sensitivity and low power consumption.
  • Capacitive silicon miniature microphones have a variable capacitor structure, consisting of a movable plate (diaphragm) and a fixed plate (back), and a fixed bias is applied between the plates. Under the action of sound pressure, the diaphragm vibrates, changing the distance between the plates, and causing the capacitance to change. The capacitance change causes the redistribution of charges between the diaphragm and the back plate, thereby realizing the conversion of sound signals to electrical signals (acoustic-electricity).
  • the condenser silicon micro-microphone usually uses doped polysilicon as the diaphragm.
  • Polysilicon has excellent characteristics such as high mobility, easy to achieve large-area growth, and low preparation cost, and is widely used in microelectronic products.
  • the polysilicon diaphragm is required to have a small tensile stress and a small stress gradient in the film. If the internal stress of the polysilicon diaphragm is too large, the structural layer of the capacitive silicon micro-microphone will be deformed or even broken, resulting in device failure. Therefore, controlling the fabrication process conditions to have a smaller tensile stress has become a very critical issue in the MEMS fabrication process.
  • the stress of the polysilicon diaphragm is adjusted by the growth conditions and annealing temperature (the annealing temperature is some as high as 1000°C).
  • the high-temperature annealing of the polysilicon diaphragm is a relatively advanced process (front-end process) in the microphone component process. In order to avoid the high-temperature retreat from affecting other device structures, the high-temperature annealing process is generally the last high-temperature annealing process.
  • the sensitivity stability of the current polysilicon diaphragm is not high in the high temperature and high humidity environment, and the problem of leakage is also prone to occur.
  • the purpose of the present invention is to provide a microphone component and a manufacturing method thereof, which are used to solve the problem that the sensitivity and stability of the microphone components in the prior art, especially the miniature microphone components, are not stable under high temperature and high humidity environment. High, prone to leakage and high production costs.
  • the present invention provides a manufacturing method of a microphone component, the manufacturing method comprising:
  • Step 1 Provide a conductive backplane, a polysilicon diaphragm, a substrate and a supporting structure, the supporting structure is arranged on the substrate, and the polysilicon diaphragm and the conductive backplane are both arranged on the supporting structure,
  • the substrate has a through back cavity, and a sacrificial layer is formed between the conductive back plate and the polysilicon vibrating film;
  • Step 2 etching the sacrificial layer to form a cavity between the conductive backplane and the polysilicon diaphragm;
  • Step 3 After the cavity is formed, an oxidation treatment is performed on the microphone component to form a silicon oxide layer on the surface of the polysilicon diaphragm by using an ultraviolet ozone photolysis oxidation technology.
  • the cavity and the back cavity are disposed on opposite sides of the polysilicon diaphragm, and a vent hole is formed on the polysilicon diaphragm, and the vent hole communicates with the cavity and the back cavity ;
  • the manufacturing method further comprises: forming a silicon oxide layer on the inner wall of the vent hole.
  • the method before etching the sacrificial layer, the method further includes:
  • the sacrificial layer is etched to form the cavity between the conductive backplane and the polysilicon diaphragm.
  • the specific steps of performing oxidation treatment on the microphone component include:
  • Oxygen and protective gas are introduced into the closed chamber, and a silicon oxide layer is formed on the surface of the polysilicon vibrating membrane under ultraviolet light irradiation.
  • the temperature of the ultraviolet light is 50° C. ⁇ 150° C.; the rate of introducing oxygen and/or protective gas is 10 L/min ⁇ 30 L/min.
  • the protective gas includes nitrogen, oxygen and the protective gas form a mixed gas, and the volume content of the oxygen in the mixed gas is 25% to 75%.
  • the material of the sacrificial layer is silicon oxide.
  • the present invention also provides a microphone component manufactured by any one of the aforementioned manufacturing methods.
  • the thickness of the silicon oxide layer is 0.01 times to 0.1 times the thickness of the polysilicon diaphragm.
  • a silicon oxide layer is formed on the surface of the polysilicon diaphragm by using ultraviolet ozone photolysis oxidation technology after etching the sacrificial layer to form a cavity, so that the sensitivity of the microphone component in a high temperature and high humidity environment is relatively stable, and the sensitivity of the microphone component is relatively stable. Larger changes will occur, ensuring the performance of the microphone in a high temperature and high humidity environment, and also reducing the risk of electric leakage in a high temperature and high humidity environment.
  • the silicon oxide layer is formed on the surface of the polysilicon diaphragm, since the silicon oxide layer can properly adjust the stress of the polysilicon diaphragm, for this reason, it is allowed to appropriately increase the stress of the polysilicon when performing the high temperature annealing treatment in the front-end process, thereby The annealing temperature when manufacturing the microphone components is reduced, the annealing process is simplified, and the production cost is reduced.
  • the present invention utilizes the ultraviolet ozone photolysis oxidation technology to perform oxidation treatment on the microphone components.
  • the application of this technology is realized in the back-end process, that is to say, the oxidation treatment is not performed in the furnace tube. In doing so, on the one hand, the process It is simple and can further reduce production costs.
  • the temperature achieved by this technology is relatively low, which will not damage the structure of the front-end process, and can better control the stress of the polysilicon diaphragm to ensure the performance of the microphone components.
  • FIG. 1 is a schematic structural diagram of a microphone component in the prior art.
  • FIG. 2 is a schematic structural diagram of a microphone component in a preferred embodiment of the present invention.
  • FIG. 3 is a flow chart of preparing a microphone component in a preferred embodiment of the present invention.
  • the inventor has analyzed the problems existing in the prior art, and with reference to FIG. 1 , in the existing microphone component, when the sound acts on the upper surface of the diaphragm 2 (polysilicon) as shown by the arrow in the figure, it will cause vibration.
  • the diaphragm 2 vibrates, changing the distance between the conductive plate 1 and the diaphragm 2, causing the capacitance value to change, thereby realizing the conversion of sound signals into electrical signals.
  • the stress of the diaphragm 2 will affect the performance of the microphone. Therefore, the stress of the diaphragm 2 needs to be controlled within a predetermined range.
  • the diaphragm 2 is fabricated, polysilicon is deposited and ion implanted, and the stress of the diaphragm 2 is adjusted through growth adjustment and annealing temperature to ensure the performance of the microphone.
  • the inventor further found that the surface of the doped diaphragm 2 is easily oxidized and softened in a high temperature and high humidity environment, resulting in a large change in sensitivity, resulting in poor performance of the microphone, such as low sound volume, especially when the stress increases.
  • the sensitivity of the small diaphragm 2 changes more, which may directly cause the product to fail in a high temperature and high humidity environment.
  • the diaphragm 2 is directly exposed to the air, and the leakage problem is also likely to occur in a high temperature and high humidity environment.
  • the high temperature annealing temperature is high, the annealing process is complicated, and the production cost is high. For these problems, no effective solutions have been given yet.
  • the present invention proposes a new microphone component and a manufacturing method thereof.
  • FIG. 2 is a schematic structural diagram of a microphone component in a preferred embodiment of the present invention.
  • this embodiment provides a microphone component including a conductive backplane 20 , a polysilicon diaphragm 30 , a support structure 40 and a substrate 70 .
  • the conductive back plate 20 has a plurality of through holes 21 distributed at intervals.
  • the through holes 21 are usually circular holes, and the arrangement can be a honeycomb arrangement.
  • the function of the through holes 21 is to adjust the gap between the polysilicon diaphragm 30 and the conductive back plate 20 . air damping to avoid hindering the movement of the polysilicon diaphragm 30 .
  • the polysilicon diaphragm 30 and the conductive back plate 20 are both disposed on the support structure 40 .
  • the support structure 40 is disposed on the substrate 70 and used to support the polysilicon diaphragm 30 and the conductive backplane 20 .
  • a part of the polysilicon diaphragm 30 is fixed on the support structure 40, and the other part is suspended.
  • a vent hole (not shown) is formed on the polysilicon diaphragm 30 , and the function of the vent hole is to further reduce air damping and avoid hindering the movement of the polysilicon diaphragm 30 .
  • a cavity 50 is formed between the conductive back plate 20 and the polysilicon diaphragm 30, and the cavity 50 provides a vibration space for the polysilicon diaphragm 30.
  • the conductive back plate 20 and the polysilicon diaphragm 30 are used for electrical connection with external circuits, and the conductive back plate 20 and the polysilicon diaphragm 30 form a capacitor.
  • the sound acts on the upper surface S1 of the polysilicon diaphragm 30, it will cause the polysilicon diaphragm 30 to vibrate, change the distance between the conductive backplate 20 and the polysilicon diaphragm 30, and cause the capacitance value to change, thereby realizing the conversion of sound signals into electrical signals .
  • the present invention does not limit the structure and manufacturing method of the support structure 40.
  • the support structure 40 can be formed by using an existing microphone process.
  • a sacrificial layer is grown on the substrate 70 (such as a wafer) to form the support structure 40.
  • the sacrificial layer Existing structures may be adopted, which are not described in detail in the present invention.
  • the substrate 70 has a back cavity 80 therethrough to expose the polysilicon diaphragm 30 .
  • the cavity 50 and the back cavity 80 are disposed on opposite sides of the polysilicon diaphragm 30 , that is, the polysilicon diaphragm 30 is disposed between the substrate 70 and the conductive backplane 20 .
  • vent hole communicates with the cavity 50 and the back cavity 80 .
  • the conductive back plate 20 is disposed between the substrate 70 and the polysilicon diaphragm 30, and at this time, the cavity 50 and the back cavity 80 are disposed on opposite sides of the conductive back plate 20 (not shown). ).
  • the present invention does not require the method of forming the polysilicon diaphragm 30, and it can also be obtained by using the existing microphone process.
  • polysilicon can be deposited on the sacrificial layer, and then ion implantation can be followed by rapid annealing to obtain the polysilicon diaphragm 30, and then By etching the sacrificial layer, a cavity 50 can be formed between the conductive back plate 20 and the polysilicon diaphragm 30 to expose the polysilicon diaphragm 30 .
  • the present invention does not limit the structure and manufacturing method of the conductive backplane 20 , and can also be obtained by using an existing microphone process, such as depositing polysilicon material on a sacrificial layer to form the conductive backplane 20 .
  • a protective layer is formed on the surface of the polysilicon diaphragm 30 , and the protective layer is a silicon oxide layer 60 formed on the surface of the polysilicon diaphragm 30 by using ultraviolet ozone photolysis oxidation technology after the cavity 50 is formed.
  • a silicon oxide layer 60 is formed on the surface of the polysilicon diaphragm 30 of the microphone component by ultraviolet ozone photolysis oxidation technology in the back-end process.
  • the layer 60 is the outermost structure, that is, after the silicon oxide layer 60 is formed, no additional structure is provided on the silicon oxide layer 60 .
  • a silicon oxide layer 60 is formed on the surface of the polysilicon diaphragm 30 exposed on the cavity 50 .
  • a silicon oxide layer is formed on the upper surface S1 of the polysilicon diaphragm 30 exposed on the cavity 50 .
  • a silicon oxide layer 60 is formed on the surface of the polysilicon diaphragm 30 exposed on the back cavity 80 .
  • a silicon oxide layer is formed on the polysilicon diaphragm 30 exposed on the lower surface S2 of the back cavity 80 .
  • a silicon oxide layer 60 is also formed on the inner wall S3 of the vent hole.
  • the present invention does not limit the thickness of the silicon oxide layer 60, which can be set according to actual conditions.
  • the thickness of the silicon oxide layer 60 should not be too small, otherwise the protection effect will be poor, and the thickness of the silicon oxide layer 60 should not be too large, otherwise the vibration space of the polysilicon diaphragm 30 will be affected.
  • the thickness of the silicon oxide layer 60 is preferably 0.01 to 0.1 times the thickness of the polysilicon diaphragm 30 .
  • the silicon oxide layer 60 evenly covers the surface of the polysilicon diaphragm 30, and the protection effect is better.
  • the "uniform coverage" here means that the thickness of the silicon oxide material on the surface of the polysilicon diaphragm 30 is the same.
  • the microphone component provided by the present invention is protected by the silicon oxide layer 60 on the surface of the polysilicon diaphragm 30, which avoids the problem that the sensitivity of the microphone component changes too much due to the oxidation of the polysilicon diaphragm 30 in a high temperature and high humidity environment. , so that the sensitivity of the microphone component provided by the present invention in a high temperature and high humidity environment is relatively stable, and no major changes will occur, ensuring the performance of the microphone component in a high temperature and high humidity environment, and also reducing the high temperature and high humidity environment. leakage risk.
  • the formation of the surface silicon oxide layer 60 enables the stress of the polysilicon diaphragm 30 to be further adjusted after high temperature annealing, so as to reduce the annealing temperature of the microphone components, thereby simplifying the annealing process, reducing equipment requirements, and ultimately reducing production cost.
  • the stress of the polycrystalline silicon diaphragm is sensitive to high temperature, the stress is generally controlled by adjusting the high temperature annealing temperature. Therefore, the temperature control accuracy is required to be high, and the higher the annealing temperature, the more energy it can reduce. Small stress, but the annealing process temperature also has upper limit requirements (such as 1000 ° C), so that the control of stress also reaches the limit.
  • the stress of the polysilicon cannot be adjusted by annealing, so the performance of the microphone components cannot be further improved.
  • the microphone part can be oxidized in the back-end process, so as to adjust the stress of the microphone part by the oxidation process, which helps to perform the annealing process in the front-end process.
  • the stress of the polysilicon diaphragm is increased, thereby reducing the annealing temperature, simplifying the annealing process, reducing the requirements for equipment, and ultimately reducing the production cost.
  • the inventor has also proved through experiments that the setting of the silicon oxide layer 60 can make the polysilicon diaphragm 30 more stable in a high temperature and high humidity environment, and the change in sensitivity can be reduced by 66.67%, that is, the sensitivity stability in a high temperature and high humidity environment is good, The performance is good, therefore, a more obvious effect has been achieved.
  • the risk of electric leakage is also avoided in a high temperature and high humidity environment, and the safety is improved.
  • the silicon oxide layer 60 is grown on the surface of the polysilicon diaphragm 30 by the ultraviolet ozone photolysis oxidation technology (UV/O3).
  • UV/O3 oxidation technology the ultraviolet ozone photolysis oxidation technology to generate silicon oxide.
  • the technology can be implemented in the back-end process, that is, it is not implemented in the furnace tube of the front-end process.
  • the process is simple, the equipment requirements are not high, and it is easy to implement, thereby effectively reducing the production cost.
  • the temperature achieved by this technology is comparable Low, will not destroy the structure of the front-end process, can better control the stress of the polysilicon diaphragm, and ensure the performance of the microphone components.
  • UV/O3 oxidation is as follows: first, oxygen (molecular formula O 2 ) is irradiated by ultraviolet light to generate ozone (molecular formula O 3 ), and the intermediate product is excited singlet oxygen (O 1 D), both of which are It has extremely strong oxidizing property and can oxidize surrounding polysilicon (Si), thereby generating silicon oxide on the surface of the polysilicon diaphragm 30 .
  • the oxidative treatment of the microphone components can be achieved by:
  • oxygen and protective gas are introduced into the airtight chamber, and silicon oxide is formed on the surface of the polysilicon vibrating film under the irradiation of ultraviolet light.
  • the temperature of the ultraviolet light is preferably 50°C to 150°C, and within this temperature range, a better oxidation effect can be achieved.
  • the protective gas in the present invention including but not limited to nitrogen (molecular formula N 2 ), and other inert gases, and the protective gas and oxygen can be passed into the closed chamber at the same time, or can be passed through first.
  • nitrogen and nitrogen are introduced at the same time, and further, the rate of introducing oxygen and/or protective gas is preferably 10L/min ⁇ 30L/min.
  • the present invention has no particular limitation on the time of the oxidation reaction.
  • the reaction time is appropriately increased, for example, it can be controlled within 10 minutes, such as 5 minutes.
  • the degree of oxidation, and thus the stress can be adjusted by adjusting the oxygen content.
  • oxygen and protective gas form a mixed gas in a closed container, preferably, the protective gas is nitrogen, and more preferably, the volume content of the oxygen in the mixed gas is 25% to 75%.
  • the present invention does not limit the type of machine for performing the oxidation treatment, and the oxidation treatment of the microphone components can be realized by configuring a UV lamp in a common heating furnace.
  • other structures other than the polysilicon diaphragm 30 may be protected to prevent other structures from being oxidized, for example, the conductive backplane 20 and the supporting structure 40 may be protected from being oxidized.
  • the present invention does not require a protection method, for example, a protective film can be attached to the part that needs to be protected, and after oxidation, the protective film can be removed.
  • other structures other than the polysilicon diaphragm 30 may not be protected. For example, if the conductive backplane 20 is oxidized, it can also prevent the conductive backplane 20 from leaking electricity in a high temperature and high humidity environment.
  • the present invention also provides a method for manufacturing a microphone component, comprising:
  • Step S11 providing a polysilicon diaphragm 30, a conductive backplate 20, a support structure 40 and a substrate 70, and a sacrificial layer is formed between the conductive backplate 20 and the polysilicon diaphragm 30;
  • Step S12 etching the sacrificial layer to form a cavity 50 between the conductive backplate 20 and the polysilicon diaphragm 30 ;
  • Step S13 after the cavity 50 is formed, an oxidation treatment is performed on the microphone component to form a silicon oxide layer 60 on the surface of the polysilicon diaphragm 30 by using an ultraviolet ozone photolysis oxidation technology.
  • the support structure and the sacrificial layer may be of the same material formed at the same time, or of different materials, or may be of the same material formed at the same time as part of the support structure and the sacrificial layer, which is not limited here.
  • the support structure and the sacrificial layer are formed of the same material at the same time, in step S11, although the support structure and the sacrificial layer are distinguished in words, in fact at least part of the support structure and the sacrificial layer are the same layer.
  • Step S11 Before the etching of S12, at least part of the support structure and the sacrificial layer are indistinguishable.
  • an annealing process is also performed on the microphone components to adjust the stress of the polysilicon diaphragm 30 .
  • the annealing treatment can adopt the existing annealing method, but the annealing temperature can be reduced compared with the prior art, and the requirements for the annealing equipment are not high.
  • the sacrificial layer is etched to form a cavity 50 between the conductive back plate 20 and the polysilicon diaphragm 30 .
  • the material of the sacrificial layer is silicon oxide.
  • the microphone component of the present invention further includes a lead-out electrode, which is formed on the conductive backplane and the polysilicon diaphragm, and is used for connection with an external circuit.
  • the preferred embodiments of the present invention are as described above, but are not limited to the scope provided by the above embodiments.
  • the oxidation treatment is not limited to the UV/O3 oxidation technology.
  • the structure of the microphone component shown in FIG. 2 is only It is illustrated as an illustration and should not be construed as a limitation of the present invention.
  • the microphone component of the present invention can be applied to electronic products such as mobile phones, digital cameras, notebook computers, hearing aids, etc., so that the performance of these electronic products in a high temperature and high humidity environment is stable and the use effect is ensured.

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Abstract

本发明涉及一种麦克风部件及其制作方法，所述制作方法包括提供导电背板、多晶硅振膜、衬底和支撑结构，所述支撑结构设置在衬底上，所述多晶硅振膜和导电背板均设置在支撑结构上，所述衬底具有贯穿的背腔，所述导电背板和多晶硅振膜之间形成牺牲层，刻蚀牺牲层以在导电背板和多晶硅振膜之间形成空腔，形成空腔后对麦克风部件执行氧化处理，以利用紫外线臭氧光解氧化技术在多晶硅振膜的表面上形成氧化硅层。本发明通过在多晶硅振膜的表面形成氧化硅层，提高了麦克风部件在高温高湿环境下的灵敏度稳定性，改善麦克风的性能，同时还能简化退火工艺，降低生产成本。

Description

麦克风部件及其制作方法 技术领域
本发明涉及电子技术领域，特别涉及一种麦克风部件及其制作方法。
背景技术
微型麦克风广泛应用于手机、数码相机、笔记本电脑、助听器等电子产品中。目前微麦克风正呈现出微型化、低成本、高精度、集成化的发展趋势。传统的通过组装方法形成的麦克风，不仅体积大，而且精度低，难以满足上述发展趋势。与传统麦克风相比，基于CMOS工艺和MEMS工艺形成的硅微型麦克风，可借助集成电路(IC)工艺强大的基础设施，实现高精度的批量制造，具有体积小、成本低及精度高的优点。此外，基于CMOS工艺和MEMS工艺形成的硅微型麦克风还可以实现与接口电路的单片集成，有效抑制了引线互联及封装所引入的寄生对麦克风性能的影响。因此基于CMOS工艺和MEMS工艺形成的硅微型麦克风成为微型麦克风发展的主流。
根据不同的转换原理，硅微型麦克风主要包括压电式、压阻式及电容式等三种类型。在商用领域中，电容式硅微型麦克风应用最为广泛，这是因为电容式硅微型麦克风具有高灵敏度以及低功耗等优点。电容式硅微型麦克风呈可变电容器结构，由可动极板(振膜)和固定极板(背板)组成，并在极板之间施加固定偏压。在声压作用下，振膜发生振动，改变极板间距，并引起电容发生变化，电容变化引起振膜与背板间的电荷重新分布，从而实现声音信号到电学信号(声-电)转换。
目前电容式硅微型麦克风通常用掺杂的多晶硅做为振膜。多晶硅具有高迁移率，易于实现大面积生长，制备成本低等优良特性，被广泛用于微电子产品中。在此应用中，要求多晶硅振膜具有较小的张应力且膜内有小的应力梯度，如果多晶硅振膜内应力过大，会使电容式硅微型麦克风结构层形变甚至断裂，造成器件失效，所以，控制制备工艺条件，使其具有较小的张应力，成为MEMS制造工艺中的一个很关键的问题。一般在生长多晶硅后会做离子注入，且通过生长条件和退火温度(退火温度有些高达1000℃以上)等来调 节多晶硅振膜的应力。对多晶硅振膜进行高温退火是麦克风部件工艺中较为靠前的工艺(前端工艺)，为避免高温退后影响其他器件结构，该高温退火工艺一般为最后一道高温退火工艺。而且目前多晶硅振膜在高温高湿环境下的灵敏度稳定性也不高，同时也容易发生漏电的问题。
因此，提供一种新型的麦克风部件及其制作方法是亟待需要解决的问题。
发明内容
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种麦克风部件及其制作方法，用于解决现有技术中麦克风部件，尤其是微型麦克风部件在高温高湿环境下灵敏度稳定性不高、容易发生漏电以及生产成本高等问题。
为实现上述目的及其它相关目的，本发明提供一种麦克风部件的制作方法，所述制作方法包括：
步骤一：提供导电背板、多晶硅振膜、衬底和支撑结构，所述支撑结构设置在所述衬底上，所述多晶硅振膜和所述导电背板均设置在所述支撑结构上，所述衬底具有贯穿的背腔，所述导电背板和所述多晶硅振膜之间形成有牺牲层；
步骤二：刻蚀所述牺牲层，以在所述导电背板和所述多晶硅振膜之间形成空腔；
步骤三：形成所述空腔后，对所述麦克风部件执行氧化处理，以利用紫外线臭氧光解氧化技术在所述多晶硅振膜的表面上形成氧化硅层。
可选地，所述空腔和所述背腔设置在所述多晶硅振膜的相对两侧，所述多晶硅振膜上形成有泄气孔，所述泄气孔连通所述空腔和所述背腔；所述制作方法还包括：在所述泄气孔的内壁上形成氧化硅层。
可选地，刻蚀所述牺牲层之前，还包括：
对所述麦克风部件执行退火处理；
退火处理后，刻蚀牺牲层以在所述导电背板和所述多晶硅振膜之间形成所述空腔。
可选地，对所述麦克风部件执行氧化处理的具体步骤包括：
将所述麦克风部件放入一密闭腔室；
向所述密闭腔室内通入氧气和保护气体，并在紫外光照射下使所述多晶硅振膜的表面形成氧化硅层。
可选地，紫外光照的温度为50℃～150℃；通入氧气和/或保护气体的速率为10L/min～30L/min。
可选地，所述保护气体包括氮气，氧气和所述保护气体形成混合气体，并且所述氧气在所述混合气体中的体积含量为25％～75％。
可选地，所述牺牲层的材料为氧化硅。
为实现上述目的及其它相关目的，本发明还提供一种麦克风部件，由根据前述任一所述的制作方法制作而成。
可选地，所述氧化硅层的厚度为所述多晶硅振膜的厚度的0.01倍～0.1倍。
如上所述，本发明通过在刻蚀牺牲层形成空腔后利用紫外线臭氧光解氧化技术在多晶硅振膜的表面上形成氧化硅层，使得麦克风部件在高温高湿环境下的灵敏度较为稳定，不会产生较大的变化，确保了麦克风在高温高湿环境下的性能，并且也降低了在高温高湿环境下的漏电风险。特别的，在多晶硅振膜的表面形成氧化硅层后，由于氧化硅层可以适当调整多晶硅振膜的应力，为此，则允许在前端工艺中执行高温退火处理时适当调高多晶硅的应力，从而降低了在制作麦克风部件时的退火温度，简化了退火工艺，降低了生产成本。
如上所述，本发明利用紫外线臭氧光解氧化技术对麦克风部件执行氧化处理，该技术应用是在后端工艺中实现的，也就是说并不在炉管中执行氧化处理，这样做，一方面工艺简单，可进一步降低生产成本，另一方面该技术所实现的温度比较低，不会破坏前端工艺的结构，可较好的管控多晶硅振膜的应力，保证麦克风部件的性能。
附图说明
本领域的普通技术人员将会理解，提供的附图用于更好地理解本发明，而不对本发明的范围构成任何限定。
图1为现有技术中麦克风部件的结构示意图。
图2为本发明优选实施例中麦克风部件的结构示意图。
图3为本发明优选实施例中制备麦克风部件的流程图。
具体实施方式
发明人针对现有技术存在的问题进行了分析，并参考图1，在现有的麦克风部件中，当声音如图中箭头所示作用于振膜2(多晶硅)的上表面时，会引起振膜2振动，改变导电板1和振膜2之间的间距，引起电容值变化，从而实现声音信号转换成电信号。其中，振膜2的应力会影响麦克风的性能，为此，需要将振膜2的应力控制在规定的范围内。在现有技术中，在制作振膜2时，会在多晶硅淀积并进行离子注入，且通过生长调节和退火温度等调节振膜2的应力，确保麦克风的性能。
发明人进一步发现：掺杂的振膜2在高温高湿环境下表面容易被氧化变软，导致灵敏度会有较大的变化，造成麦克风的性能不佳，如声音音量较低，尤其是应力越小的振膜2的灵敏度变化更大，可能直接会导致产品在高温高湿环境下失效。此外，振膜2直接暴露在空气中，在高温高湿环境下也容易发生漏电问题。另外，高温退火的温度高，退火工艺复杂，生产成本高。针对这些问题，目前还没有给出有效的解决措施。
对此，本发明提出了一种新的麦克风部件及其制作方法。
为使本发明的上述目的、特征和优点能够更为明显易懂，下面结合附图对本发明的优选实施例做详细的说明。
图2为本发明优选实施例中麦克风部件的结构示意图。如图2所示，本实施例提供一种麦克风部件，包括导电背板20、多晶硅振膜30、支撑结构40和衬底70。所述导电背板20具有若干间隔分布的通孔21，通孔21通常为圆形孔，排布方式可为蜂窝状排列，通孔21的作用是调节多晶硅振膜30与导电背板20间的空气阻尼，避免阻碍多晶硅振膜30的运动。其中所述多晶硅振膜30和导电背板20均设置在支撑结构40上。所述支撑结构40设置在衬底70上，并用来支撑多晶硅振膜30和导电背板20。优选的，所述多晶硅振膜30的一部分固定在支撑结构40上，另一部分悬空设置。进一步的，所述多晶硅振膜30上形成有泄气孔(未图示)，所述泄气孔的作用是进一步降低空气阻尼，避免阻碍多晶硅振膜30的运动。此外，所述导电背板20和多晶 硅振膜30之间形成有空腔50，空腔50为多晶硅振膜30提供振动空间。所述导电背板20和多晶硅振膜30用于与外部电路电连接，所述导电背板20和多晶硅振膜30构成一个电容。当声音作用于多晶硅振膜30的上表面S1时，会引起多晶硅振膜30振动，改变导电背板20和多晶硅振膜30之间的间距，引起电容值变化，从而实现声音信号转换成电信号。
本发明对支撑结构40的结构和制作方式不作限定，具体可采用现有的麦克风工艺来形成支撑结构40，例如在衬底70(如晶圆)上生长牺牲层来形成支撑结构40，牺牲层可采用现有的结构，本发明对其不作详细描述。此外，所述衬底70具有贯穿的背腔80而暴露出多晶硅振膜30。在一些实施例中，所述空腔50和背腔80设置在多晶硅振膜30的相对两侧，也即多晶硅振膜30设置在衬底70和导电背板20之间。进一步的，所述泄气孔连通空腔50和背腔80。在另外的实施例中，导电背板20设置在衬底70和多晶硅振膜30之间，此时，所述空腔50和背腔80设置在导电背板20的相对两侧(未图示)。
此外，本发明对形成多晶硅振膜30的方式也没有要求，也可采用现有麦克风工艺得到，举例来说，可在牺牲层上沉积多晶硅，然后离子注入后快速退火得到多晶硅振膜30，之后刻蚀牺牲层，即可在导电背板20和多晶硅振膜30之间形成空腔50而暴露出多晶硅振膜30。同样的，本发明对导电背板20的结构和制作方式也未作任何限定，亦可采用现有麦克风工艺得到，例如在牺牲层上沉积多晶硅材料来形成导电背板20。
其中，所述多晶硅振膜30的表面形成有保护层，所述保护层是在形成空腔50后利用紫外线臭氧光解氧化技术在多晶硅振膜30的表面形成的氧化硅层60。此处，应理解，通过前端工艺形成麦克风部件后，再在后端工艺中通过紫外线臭氧光解氧化技术在麦克风部件的多晶硅振膜30的表面上形成氧化硅层60，优选地，该氧化硅层60为最外层的结构，也即在形成氧化硅层60后，不会在该氧化硅层60上设置额外的结构。
具体而言，所述多晶硅振膜30暴露在空腔50的表面上形成有氧化硅层60，本实施例中，所述多晶硅振膜30暴露在空腔50的上表面S1形成有氧化硅层60。进一步的，所述多晶硅振膜30暴露在背腔80的表面上还形成有氧化硅层60，本实施例中，所述多晶硅振膜30暴露在背腔80的下表面S2形成 有氧化硅层60。优选的，所述泄气孔的内壁S3亦形成有氧化硅层60。本发明对氧化硅层60的厚度没有限定，具体可根据实际情况设置。一般的，氧化硅层60的厚度不能过小，否则保护效果不佳，且氧化硅层60的厚度也不能过大，否则会影响多晶硅振膜30的振动空间。本实施例中，所述氧化硅层60的厚度优选为多晶硅振膜30的厚度的0.01倍～0.1倍。优选的，所述氧化硅层60均匀覆盖在多晶硅振膜30的表面上，保护效果更好。此处的“均匀覆盖”是指氧化硅材料在多晶硅振膜30的表面的厚度相同。
应知晓，本发明提供的麦克风部件由于其多晶硅振膜30的表面存在氧化硅层60的保护，避免了麦克风部件在高温高湿环境下由于多晶硅振膜30被氧化而导致灵敏度变化太大的问题，使得本发明提供的麦克风部件在高温高湿环境下的灵敏度较为稳定，不会产生较大的变化，确保了麦克风部件在高温高湿环境下的性能，并且也降低了在高温高湿环境下的漏电风险。尤其的，表面氧化硅层60的形成，使得多晶硅振膜30的应力可以在高温退火后得到进一步调整，以便降低麦克风部件的退火温度，从而简化退火工艺，并降低对设备的要求，最终降低生产成本。应理解，在现有技术中，由于多晶硅振膜的应力对高温温度较为敏感，故一般通过调节高温退火温度来控制应力，因此，对温度控制精度要求高，而退火温度越高，越能减小应力，但退火工艺温度也有上限要求(如1000℃)，使得应力的控制也达到了极限。并且一旦经过高温退火处理后，后续无法再通过退火调节多晶硅的应力，因此，麦克风部件的性能基本上也无法再进一步提升。而本发明可以在麦克风部件在经过退火处理后，在后端工艺中再对麦克风部件执行氧化处理，以利用氧化处理来调整麦克风部件的应力，这样做，有助于在前端工艺中执行退火处理时提高多晶硅振膜的应力，从而降低退火温度，简化退火工艺，降低对设备的要求，最终降低生产成本。
发明人通过实验也证明了氧化硅层60的设置可使多晶硅振膜30在高温高湿环境下较为稳定，且灵敏度的变化可以降低66.67％，即在高温高湿环境下的灵敏度稳定性好，性能佳，因此，取得了较为明显的效果。而且由于氧化硅层60的保护，在高温高湿环境下，也避免了漏电的风险，提高了安全性。
本发明实施例中，通过紫外线臭氧光解氧化技术(UV/O3)在多晶硅振 膜30的表面生长氧化硅层60，应理解，利用UV/O3氧化技术来生成氧化硅的好处在于，该氧化技术能够在后端工艺中实现，也即不在前端工艺的炉管中执行，一方面工艺简单，对设备要求不高，便于实施，从而有效降低生产成本，另一方面该技术所实现的温度比较低，不会破坏前端工艺的结构，可较好的管控多晶硅振膜的应力，保证麦克风部件的性能。
UV/O3氧化的作用机理为：首先，氧气(分子式O 2)被紫外光照射后产生臭氧(分子式O 3)，中间产物是被激发的单态氧(O 1D)，该两种物质都具有极强的氧化性，能氧化周围的多晶硅(Si)，从而在多晶硅振膜30的表面生成氧化硅。
在一优选的操作中，可通过如下方式实现对麦克风部件的氧化处理，包括：
首先，将麦克风部件放入一密闭腔室中；
然后，向所述密闭腔室内通入氧气和保护气体，并在紫外光照射下使所述多晶硅振膜的表面形成氧化硅。
进一步优选的，在执行氧化处理时，紫外光照的温度优选为50℃～150℃，该温度范围内，可达到较好的氧化效果。应知晓，本发明对所述保护气体的选用没有要求，包括但不限于氮气(分子式N 2)，还可以是其他惰性气体，而且保护气体和氧气可同时通入密闭腔室，也可以先通入保护气体，再通入氧气。优选的，同时通入氧气和氮气，进一步的，通入氧气和/或保护气体的速率优选为10L/min～30L/min。此外，本发明对氧化反应的时间没有特别的限制，通常的，为了达到较好的氧化效果，适当增加反应时间，例如可控制在10分钟以内，如5分钟。另外，可通过调节氧气含量来调节氧化程度，从而调节应力。进一步的，氧气和保护气体在密闭容器内形成混合气体，优选的，所述保护气体为氮气，更优选的，所述氧气在所述混合气体中的体积含量为25％～75％。本发明对执行氧化处理的机台的种类没有限定，普通的加热炉配置UV灯即可实现麦克风部件的氧化处理。
进一步的，在执行氧化处理时，可对除了多晶硅振膜30以外的其他结构进行防护，以免其他结构被氧化，如对导电背板20和支撑结构40进行防护，避免被氧化。本发明对防护方式不作要求，例如可以是在需要保护的部位贴 保护膜，在氧化后，再将保护膜去除即可。在其他实施例中，也可对除了多晶硅振膜30以外的其他结构不作防护，例如导电背板20如果被氧化，也可以防止导电背板20在高温高湿环境下漏电的问题。
如图3所示，本发明还提供一种麦克风部件的制作方法，包括：
步骤S11：提供多晶硅振膜30、导电背板20、支撑结构40和衬底70，导电背板20和多晶硅振膜30之间形成有牺牲层；
步骤S12：刻蚀牺牲层，以在导电背板20和多晶硅振膜30之间形成空腔50；
步骤S13：形成空腔50后，对麦克风部件执行氧化处理，以利用紫外线臭氧光解氧化技术在多晶硅振膜30的表面上形成氧化硅层60。
需要说明的是，步骤S11中，支撑结构和牺牲层可以是同时形成的同种材料，也可以是不同材料，也可以部分支撑结构和牺牲层时同时形成的同种材料，这里不做限定。在至少部分支撑结构和牺牲层是同时形成的同种材料的实施方式中，在步骤S11中虽然文字上区分了支撑结构和牺牲层，但实际上至少部分支撑结构和牺牲层是同一层，步骤S12的刻蚀前，至少部分支撑结构和牺牲层是无法区分的。
进一步的，在刻蚀牺牲层之前，还对麦克风部件执行退火处理，以调节多晶硅振膜30的应力。退火处理可采用现有的退火方式，但退火温度相比于现有技术可以降低，且对退火设备要求不高。退火处理后，刻蚀牺牲层，以在导电背板20和多晶硅振膜30之间形成空腔50。优选的，牺牲层的材料为氧化硅。
应理解，执行退火处理之前，需要通过材料的淀积在衬底上形成导电背板、支撑结构和多晶硅振膜，由于本发明不涉及对此的改进，故不作详细描述。此外，本发明的麦克风部件还包括引出电极，形成在导电背板和多晶硅振膜上，用于与外部电路连接。
需说明的是，本发明优选实施例如上所述，但并不局限于上述实施例所提供的范围，例如氧化处理不限于UV/O3氧化技术，此外，图2所示的麦克风部件的结构仅作为示意来说明，而不应构成对本发明的限定。本发明的麦克风部件可应用于手机、数码相机、笔记本电脑、助听器等电子产品中，使 得这些电子产品在高温高湿环境下的性能稳定，确保使用效果。
应理解，上述实施例具体公开了本发明优选实施例的特征，使得本领域技术人员可以更好地理解本发明。本领域技术人员应当理解，在本申请文件公开内容的基础上，容易将本发明做适当修改，以实现与本发明所公开的实施例相同的目的和/或实现相同的优点。本领域技术人员还应该认识到，这样的相似构造不脱离本发明公开的范围，并且在不脱离本发明公开范围的情况下，它们可以进行各种改变、替换和变更。

Claims (10)

  1. 一种麦克风部件的制作方法，其特征在于，包括：
    步骤一：提供导电背板、多晶硅振膜、衬底和支撑结构，所述支撑结构设置在所述衬底上，所述多晶硅振膜和所述导电背板均设置在所述支撑结构上，所述衬底具有贯穿的背腔，所述导电背板和所述多晶硅振膜之间形成有牺牲层；
    步骤二：刻蚀所述牺牲层，以在所述导电背板和所述多晶硅振膜之间形成空腔；
    步骤三：形成所述空腔后，对所述麦克风部件执行氧化处理，以利用紫外线臭氧光解氧化技术直接在所述多晶硅振膜的表面上形成氧化硅层。
  2. 根据权利要求1所述的麦克风部件的制作方法，其特征在于，所述空腔和所述背腔设置在所述多晶硅振膜的相对两侧，所述多晶硅振膜上形成有泄气孔，所述泄气孔连通所述空腔和所述背腔；所述制作方法还包括：在所述泄气孔的内壁上形成氧化硅层。
  3. 根据权利要求1所述的麦克风部件的制作方法，其特征在于，刻蚀所述牺牲层之前，还包括：
    对所述麦克风部件执行退火处理；
    退火处理后，刻蚀牺牲层以在所述导电背板和所述多晶硅振膜之间形成所述空腔。
  4. 根据权利要求1所述的麦克风部件的制作方法，其特征在于，对所述麦克风部件执行氧化处理的步骤包括：
    将所述麦克风部件放入一密闭腔室；
    向所述密闭腔室内通入氧气和保护气体，并在紫外光照射下使所述多晶硅振膜的表面形成氧化硅层。
  5. 根据权利要求4所述的麦克风部件的制作方法，其特征在于，紫外光照的温度为50℃～150℃；通入氧气和/或保护气体的速率为10L/min～30L/min。
  6. 根据权利要求5所述的麦克风部件的制作方法，其特征在于，所述保护气体包括氮气，所述氧气和所述保护气体形成混合气体，并且所述氧气在所 述混合气体中的体积含量为25％～75％。
  7. 根据权利要求1-6中任一所述的麦克风部件的制作方法，其特征在于，所述牺牲层的材料为氧化硅。
  8. 根据权利要求1所述的麦克风部件的制作方法，其特征在于，所述氧化硅层的厚度为所述多晶硅振膜的厚度的0.01倍～0.1倍。
  9. 一种麦克风部件，其特征在于，由根据如权利要求1-8中任一项所述的麦克风部件的制作方法制作而成。
  10. 根据权利要求9所述的麦克风部件，其特征在于，所述氧化硅层的厚度为所述多晶硅振膜的厚度的0.01倍～0.1倍。
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