WO2022147913A1 - Package structure for radio frequency front-end module, and mobile terminal - Google Patents

Package structure for radio frequency front-end module, and mobile terminal Download PDF

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Publication number
WO2022147913A1
WO2022147913A1 PCT/CN2021/084111 CN2021084111W WO2022147913A1 WO 2022147913 A1 WO2022147913 A1 WO 2022147913A1 CN 2021084111 W CN2021084111 W CN 2021084111W WO 2022147913 A1 WO2022147913 A1 WO 2022147913A1
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WO
WIPO (PCT)
Prior art keywords
chip
radio frequency
printed circuit
packaged
circuit board
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PCT/CN2021/084111
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French (fr)
Chinese (zh)
Inventor
何文卿
Original Assignee
闻泰科技(深圳)有限公司
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Publication of WO2022147913A1 publication Critical patent/WO2022147913A1/en

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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40Circuits
    • H04B1/401Circuits for selecting or indicating operating mode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/071Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40Circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/182Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16135Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked

Definitions

  • the present disclosure relates to the technical field of packaging, and in particular, to a packaging structure of a radio frequency front-end module and a mobile terminal.
  • 5G terminal equipment With the continuous development and evolution of 5G terminal equipment, 5G terminal equipment needs to be compatible with various countries and regions, taking into account various aspects such as design cost and performance. Therefore, in the selection of RF front-end modules, it is necessary to comprehensively consider the miniaturization and combination flexibility of the RF front-end modules.
  • the RF amplifier unit and the duplex unit are both integrated in the RF front-end module, that is, the RF amplifier unit and the duplex unit are integrated into one chip.
  • Changes in demand require manufacturers to continuously develop new RF front-end modules, that is, they need to use new RF front-end modules for matching, which results in huge development pressure on RF front-end module manufacturers.
  • manufacturers will develop large and comprehensive products, which will increase the chip area and waste material costs.
  • the technical problem to be solved by the present disclosure is to solve the problems of huge development pressure, increased chip area and waste of material cost when RF front-end module manufacturers develop new RF front-end modules.
  • the present disclosure provides a packaging structure and a mobile terminal for a radio frequency front-end module, so that the design of the radio frequency amplification unit and the duplex unit can be carried out independently, and the radio frequency front-end module is improved.
  • the flexibility of group application makes the design of the RF front-end module more compact, effectively saving the layout space of the printed circuit board.
  • an embodiment of the present disclosure provides a packaging structure of a radio frequency front-end module, including:
  • the first radio frequency switch is respectively connected to the radio frequency amplifying unit and the duplex unit, and the duplex unit is connected to the second radio frequency switch connection;
  • the radio frequency amplification unit, the first radio frequency switch, the duplex unit and the second radio frequency switch are packaged as at least two chips, and the radio frequency amplification unit and the duplex unit are packaged in different places. in the chip;
  • the at least two chips are superimposed and soldered on the printed circuit board along a direction perpendicular to the printed circuit board.
  • the duplex unit includes at least two duplex paths, and the duplex paths are used to filter radio frequency signals;
  • the first radio frequency switch is connected to the duplex unit through one of the duplex paths
  • the second radio frequency switch is connected to the duplex unit through one of the duplex paths.
  • the chip with the largest distance from the printed circuit board is provided with a plurality of pads adjacent to the surface of the printed circuit board, and the remaining chips are away from the surface of the printed circuit board and A plurality of pads are arranged adjacent to the surface of the printed circuit board.
  • the radio frequency amplification unit, the first radio frequency switch, the duplex unit and the second radio frequency switch are packaged into two chips, and the two chips include a first chip and a second chip, The first chip and the second chip are superimposed and welded on the printed circuit board along a direction perpendicular to the printed circuit board.
  • the first chip is welded on the printed circuit board, and the second chip is welded on the first chip;
  • the pads of the first chip facing away from the surface of the printed circuit board have the same number and distribution positions as the pads of the second chip adjacent to the surface of the printed circuit board.
  • the input end of the radio frequency front-end module is connected to the pad on one side of the first chip adjacent to the printed circuit board;
  • the output end of the RF front-end module is connected to the pad on the side of the second chip adjacent to the printed circuit board.
  • the radio frequency amplification unit and the first radio frequency switch are packaged as the first chip, and the duplex unit and the second radio frequency switch are packaged as the second chip; or,
  • the radio frequency amplification unit is packaged as the first chip, and the first radio frequency switch, the duplex unit and the second radio frequency switch are packaged as the second chip.
  • the first chip is soldered to the printed circuit board
  • the second chip is soldered to a surface of the first chip facing away from the printed circuit board.
  • the radio frequency amplification unit, the first radio frequency switch, the duplex unit and the second radio frequency switch are packaged into three chips, and the three chips include a first chip, a second chip and For the third chip, the first chip, the second chip and the third chip are superimposed and welded on the printed circuit board along a direction perpendicular to the printed circuit board.
  • the radio frequency amplification unit and the first radio frequency switch are packaged as the first chip, the duplex unit is packaged as the second chip, and the second radio frequency switch is packaged as the first chip a third chip; or,
  • the radio frequency amplification unit is packaged as the first chip, the first radio frequency switch and the duplex unit are packaged as the second chip, and the second radio frequency switch is packaged as the third chip; or,
  • the radio frequency amplification unit is packaged as the first chip
  • the first radio frequency switch is packaged as the second chip
  • the duplex unit and the second radio frequency switch are packaged as the third chip .
  • the first die is soldered to the printed circuit board
  • the second die is soldered to a surface of the first die facing away from the printed circuit board
  • the third die is soldered to the second die The chip faces away from the surface of the printed circuit board.
  • the output end of the RF front-end module is connected to a pad on a side of the third chip adjacent to the printed circuit board.
  • the radio frequency amplification unit is packaged as a first chip
  • the first radio frequency switch is packaged as a second chip
  • the duplex unit is packaged as a third chip
  • the second radio frequency switch is packaged as a the fourth chip
  • the first chip, the second chip, the third chip and the fourth chip are sequentially stacked and welded on the printed circuit board along the direction perpendicular to the printed circuit board, and the first chip is welded to the printed circuit board. on the printed circuit board.
  • the package structure of the RF front-end module further includes: a heat dissipation pad;
  • the heat dissipation pad is disposed on a surface of the first chip adjacent to the printed circuit board.
  • an embodiment of the present disclosure further provides a mobile terminal, including the packaging structure of the radio frequency front-end module as described in the first aspect.
  • the packaging structure of the radio frequency front-end module includes a radio frequency amplification unit, a first radio frequency switch, a duplex unit, and a second radio frequency switch.
  • the first radio frequency switch is respectively connected to the radio frequency amplification unit and the duplex unit.
  • the duplex unit Connected with the second radio frequency switch, the radio frequency amplifying unit, the first radio frequency switch, the duplex unit and the second radio frequency switch are packaged into at least two chips, and the radio frequency amplifying unit and the duplex unit are packaged in different chips.
  • the design of the RF amplifier unit and the duplex unit can be carried out independently, and the RF amplifier unit can remain relatively stable and independent.
  • the same RF amplification can be maintained. It can be applied to different countries and regions only by adjusting the duplex unit, which makes the frequency band collocation of the RF front-end module more flexible, reduces the design redundancy of the RF front-end module, and improves the application of the RF front-end module. flexibility, which relieves the development pressure of manufacturers.
  • At least two chips are arranged along the direction perpendicular to the printed circuit board, superimposed and welded on the printed circuit board, which makes the design of the RF front-end module more compact, reduces the area occupied by the RF front-end module on the printed circuit board, and effectively saves money the layout space of the printed circuit board.
  • FIG. 1 is a schematic diagram of a connection structure of a radio frequency front-end module according to an embodiment of the present disclosure
  • FIG. 2 is a schematic diagram of a packaging structure of a radio frequency front-end module according to an embodiment of the present disclosure
  • FIG. 3 is a schematic diagram of a packaging and disassembling manner of a radio frequency front-end module according to an embodiment of the present disclosure
  • FIG. 4 is a schematic diagram of a packaging and disassembling manner of a radio frequency front-end module according to an embodiment of the present disclosure
  • FIG. 5 is a schematic diagram of setting pads on a chip according to an embodiment of the present disclosure.
  • FIG. 6 is a schematic diagram of another RF front-end module packaging structure provided by an embodiment of the present disclosure.
  • FIG. 7 is a schematic diagram of a package and disassembly method of another radio frequency front-end module provided by an embodiment of the present disclosure
  • FIG. 8 is a schematic diagram of a packaging and disassembling manner of another radio frequency front-end module provided by an embodiment of the present disclosure
  • FIG. 9 is a schematic diagram of a packaging and disassembling manner of another radio frequency front-end module provided by an embodiment of the present disclosure.
  • FIG. 10 is a schematic diagram of another RF front-end module packaging structure provided by an embodiment of the present disclosure.
  • FIG. 11 is a schematic diagram of another packaging and disassembling manner of a radio frequency front-end module according to an embodiment of the present disclosure.
  • FIG. 1 is a schematic diagram of a connection structure of a radio frequency front-end module according to an embodiment of the present disclosure.
  • the package structure of the RF front-end module includes a RF amplifier unit 1, a first RF switch 2, a duplex unit 3 and a second RF switch 4.
  • the first RF switch 2 is connected to the RF amplifier unit 1 and the duplex unit respectively.
  • the unit 3 is connected, and the duplex unit 3 is connected with the second radio frequency switch 4 .
  • the input terminal IN of the radio frequency front-end module inputs a small radio frequency signal
  • the radio frequency amplification unit 1 is used to amplify the radio frequency signal input by the input terminal IN of the radio frequency front-end module
  • the duplex unit 3 includes a plurality of duplex paths
  • the duplex channel is used to filter the amplified RF signal
  • the first RF switch 2 and the second RF switch 4 are used to select the channel for accessing the RF front-end module
  • the second RF switch 4 outputs the filtered signal through the output terminal OUT.
  • FIG. 1 exemplarily shows that the duplex unit 3 includes two duplex modules 31 and one filter module 32.
  • the radio frequency transmission path in the duplex unit 3 is connected to the radio frequency amplifying unit 1, and the one that is not connected to the radio frequency amplifying unit 1 is the radio frequency transmission path.
  • the duplex module 31 can filter the radio frequency transmitting channel and the radio frequency receiving channel with different bandwidths, and the filtering module 32 can only filter the radio frequency transmitting channel with a set bandwidth.
  • FIG. 2 is a schematic diagram of a packaging structure of a radio frequency front-end module according to an embodiment of the present disclosure.
  • the radio frequency amplification unit 1, the first radio frequency switch 2, the duplex unit 3 and the second radio frequency switch 4 are packaged into at least two chips
  • FIG. 2 exemplarily sets the radio frequency amplification unit 1, the first radio frequency
  • the switch 2 , the duplex unit 3 and the second radio frequency switch 4 are packaged as a chip 100 and a chip 200
  • the radio frequency amplification unit 1 and the duplex unit 3 are packaged in different chips.
  • the RF amplifier unit and the duplex unit are both integrated in the RF front-end module, that is, the RF amplifier unit and the duplex unit are integrated into one chip.
  • Changes in demand require manufacturers to continuously develop new RF front-end modules, that is, they need to use new RF front-end modules for matching, which results in huge development pressure on RF front-end module manufacturers.
  • manufacturers will develop large and comprehensive products, which will increase the chip area and waste material costs.
  • the radio frequency amplifying unit 1 and the duplex unit 3 are set to be packaged in different chips.
  • the chips are used together, it is ensured that there is one chip encapsulated with the radio frequency amplifying unit 1 and one chip encapsulated with the duplex unit 3 .
  • the chips can be used together.
  • it solves the need to constantly design and develop new RF front-end modules due to the different RF front-end module designs and changes in demand caused by the RF amplifier unit 1 and the duplex unit 3 being packaged in one chip. , resulting in waste of resources such as material cost, so that the design of the RF amplifier unit 1 and the duplex unit 3 can be carried out independently, and the RF amplifier unit 1 can remain relatively stable and independent.
  • the RF front-end module is divided into at least two modules and designed into a package form that can be superimposed and welded, so that the design of the RF front-end module is more compact, and the area of the printed circuit board 5 occupied by the RF front-end module is reduced. , effectively saving the layout space of the printed circuit board 5 .
  • the chip with the largest distance from the printed circuit board 5 is set.
  • the surface of the chip 100 facing away from the printed circuit board 5 and the surface adjacent to the printed circuit board 5 are provided with a plurality of pads.
  • other chips, such as the top and bottom of the chip 100 are provided with a plurality of soldering pads, and the lowermost chip, such as the chip 100, is soldered or mounted on the printed circuit board through the bottom pads.
  • the remaining chips, such as the chip 200 are welded between the two chips through the pads at the bottom and the pads reserved on the top of the chip 100 below the chip 200, thereby forming a superimposed welding RF front-end module package structure. Therefore, the design of the RF front-end module is made more compact, the area occupied by the RF front-end module on the printed circuit board 5 is reduced, and the layout space of the printed circuit board 5 is effectively saved.
  • the radio frequency amplification unit 1, the first radio frequency switch 2, the duplex unit 3 and the second radio frequency switch 4 may be packaged into two chips, and the two chips include the first chip 6 and the second radio frequency switch 4.
  • the second chip 7 , the first chip 6 and the second chip 7 are superimposed and soldered on the printed circuit board 5 along the direction perpendicular to the printed circuit board 5 .
  • FIG. 3 is a schematic diagram of a packaging and disassembling manner of a radio frequency front-end module according to an embodiment of the present disclosure.
  • the radio frequency amplification unit 1 and the first radio frequency switch 2 may be packaged
  • the duplex unit 3 and the second radio frequency switch 4 are packaged as a second chip 7 .
  • the radio frequency amplification unit 1 and the first radio frequency switch 2 are packaged as the first chip 6
  • the duplex unit 3 and the second radio frequency switch 4 are packaged as the second chip 7, so that the radio frequency amplification unit 1 and the duplex unit 3 are packaged as the second chip 7.
  • Being packaged in different chips makes the frequency band collocation of the RF front-end module more flexible, reduces the design redundancy of the RF front-end module, improves the flexibility of the application of the RF front-end module, and relieves the development pressure of manufacturers.
  • FIG. 4 is a schematic diagram of a packaging and disassembling manner of a radio frequency front-end module according to an embodiment of the present disclosure.
  • the RF amplification unit 1 when the RF amplification unit 1 , the first RF switch 2 , the duplex unit 3 and the second RF switch 4 are packaged into two chips, the RF amplification unit 1 may also be packaged as the first RF amplification unit 1 .
  • a chip 6 , the first radio frequency switch 2 , the duplex unit 3 and the second radio frequency switch 4 are packaged as a second chip 7 .
  • the radio frequency amplifying unit 1 is packaged as the first chip 6
  • the first radio frequency switch 2 the duplex unit 3 and the second radio frequency switch 4 are packaged as the second chip 7
  • the radio frequency amplifying unit 1 and the duplex unit 3 are packaged as the second chip 7 .
  • Being packaged in different chips makes the frequency band collocation of the RF front-end module more flexible, reduces the design redundancy of the RF front-end module, improves the flexibility of the application of the RF front-end module, and relieves the development pressure of manufacturers.
  • the first chip 6 may be soldered to the printed circuit board 5
  • the second chip 7 may be soldered to the surface of the first chip 6 away from the printed circuit board 5 .
  • a radio frequency switch 2 , a duplex unit 3 and a second radio frequency switch 4 are packaged into two chips
  • the radio frequency amplification unit 1 and the first radio frequency switch 2 can be packaged as a first chip 6
  • the duplex unit 3 and the second radio frequency switch 4 are packaged as a first chip 6 .
  • the radio frequency switch 4 is packaged as the second chip 7, or the radio frequency amplification unit 1 is packaged as the first chip 6, and the first radio frequency switch 2, the duplex unit 3 and the second radio frequency switch 4 are packaged as the second chip 7, which realizes
  • the first chip 6 encapsulated with the radio frequency amplifier unit 1 is welded on the printed circuit board 5 , and the radio frequency amplifier unit 1 can dissipate heat through the metal layer on the printed circuit board 5 , which is conducive to optimizing the heat dissipation effect of the radio frequency amplifier unit 1 .
  • connection sequence of the duplex unit 3 and the second RF switch 4 is set at the upper and lower positions of the package, which is beneficial to simplify the design of the pads at the bottom of the uppermost chip and the top and bottom of the remaining chips.
  • the radio frequency amplification unit 1 and the first radio frequency switch 2 are packaged as the first chip 6, and the duplex unit 3 and the second radio frequency switch 4 are packaged as the second chip 7, it is only necessary to pass through the adjacent chips, the upper chip
  • the pads on the bottom and the pads on the top of the lower chip can realize the electrical connection relationship between the first radio frequency switch 2 and the duplex unit 3 .
  • the RF amplifier unit 1 is packaged as the first chip 6, and the first RF switch 2, the duplex unit 3 and the second RF switch 4 are packaged as the second chip 7, it only needs to pass through the adjacent chips, the upper chip
  • the pad on the bottom and the pad on the top of the lower chip can realize the electrical connection relationship between the RF amplification unit 1 and the first RF switch 2, and in the above case, the input terminal IN of the RF front-end module can be directly printed through the lowermost chip.
  • the pads on one side of the circuit board 5 realize the connection with the printed circuit board 5 .
  • FIG. 5 is a schematic diagram of an on-chip pad arrangement according to an embodiment of the present disclosure.
  • the diagram on the left side of FIG. 5 may be the arrangement of the pads on the side of the first chip 6 away from the printed circuit board 5 or the arrangement of the pads on the side of the second chip 7 adjacent to the printed circuit board 5 .
  • the figure on the right in 5 may be the arrangement of the pads on the side of the first chip 6 adjacent to the printed circuit board 5 .
  • the first chip 6 is soldered on the printed circuit board 5 through the pads on the side of the first chip 6 adjacent to the printed circuit board 5 , and the pads on the side of the first chip 6 away from the printed circuit board 5 are adjacent to the second chip 7
  • the number and distribution of the pads on the side of the printed circuit board 5 are the same
  • the second chip 7 passes through the pads on the side of the second chip 7 adjacent to the printed circuit board 5 and the first chip 6 on the side away from the printed circuit board 5 . Solder to the first chip 6 .
  • both the input terminal IN and the output terminal OUT of the RF front-end module in FIG. 1 need to be connected to the printed circuit board 5 , and the input terminal IN can be connected to the printed circuit board 5 through the welding relationship between the first chip 6 and the printed circuit board 5 .
  • the output terminal OUT is led out from the pad on the side of the second chip 7 adjacent to the printed circuit board 5 , and the connection with the printed circuit board 5 can be realized through the pad passing through the first chip 6 .
  • FIG. 6 is a schematic diagram of another RF front-end module packaging structure according to an embodiment of the present disclosure.
  • the radio frequency amplification unit 1 , the first radio frequency switch 2 , the duplex unit 3 and the second radio frequency switch 4 can be packaged into three chips, and the three chips include a first chip 6 and a second chip 7 and the third chip 8 , the first chip 6 , the second chip 7 and the third chip 8 are superimposed and welded on the printed circuit board 5 along the direction perpendicular to the printed circuit board 5 .
  • FIG. 7 is a schematic diagram of another packaging and disassembling manner of a radio frequency front-end module according to an embodiment of the present disclosure. 1 , 6 and 7 , when the radio frequency amplifying unit 1 , the first radio frequency switch 2 , the duplex unit 3 and the second radio frequency switch 4 are packaged into three chips, the radio frequency amplifying unit 1 and the first radio frequency switch can be set 2 is packaged as the first chip 6 , the duplex unit 3 is packaged as the second chip 7 , and the second radio frequency switch 4 is packaged as the third chip 8 .
  • the radio frequency amplification unit 1 and the first radio frequency switch 2 are packaged as the first chip 6, the duplex unit 3 is packaged as the second chip 7, and the second radio frequency switch 4 is packaged as the third chip 8, so that the radio frequency amplification Unit 1 and duplex unit 3 are packaged in different chips, which makes the frequency band collocation of the RF front-end module more flexible, reduces the design redundancy of the RF front-end module, improves the flexibility of the application of the RF front-end module, and alleviates the The development pressure of manufacturers.
  • FIG. 8 is a schematic diagram of another packaging and disassembling manner of a radio frequency front-end module according to an embodiment of the present disclosure. 1 , 6 and 8 , when the radio frequency amplifying unit 1 , the first radio frequency switch 2 , the duplex unit 3 and the second radio frequency switch 4 are packaged into three chips, the radio frequency amplifying unit 1 may be packaged as the first The chip 6 , the first RF switch 2 and the duplex unit 3 are packaged as a second chip 7 , and the second RF switch 4 is packaged as a third chip 8 .
  • the RF amplification unit 1 is packaged as the first chip 6, the first RF switch 2 and the duplex unit 3 are packaged as the second chip 7, and the second RF switch 4 is packaged as the third chip 8, so that the RF amplification Unit 1 and duplex unit 3 are packaged in different chips, which makes the frequency band collocation of the RF front-end module more flexible, reduces the design redundancy of the RF front-end module, improves the flexibility of the application of the RF front-end module, and alleviates the The development pressure of manufacturers.
  • FIG. 9 is a schematic diagram of another packaging and disassembling manner of a radio frequency front-end module according to an embodiment of the present disclosure. 1 , 6 and 9 , when the radio frequency amplifying unit 1 , the first radio frequency switch 2 , the duplex unit 3 and the second radio frequency switch 4 are packaged into three chips, the radio frequency amplifying unit 1 may be packaged as the first The chip 6 , the first radio frequency switch 2 are packaged as the second chip 7 , the duplex unit 3 and the second radio frequency switch 4 are packaged as the third chip 8 .
  • the radio frequency amplification unit 1 is packaged as the first chip 6, the first radio frequency switch 2 is packaged as the second chip 7, the duplex unit 3 and the second radio frequency switch 4 are packaged as the third chip 8, so that the radio frequency
  • the amplification unit 1 and the duplex unit 3 are packaged in different chips, which makes the frequency band collocation of the RF front-end module more flexible, reduces the design redundancy of the RF front-end module, and improves the flexibility of the application of the RF front-end module. Alleviate the development pressure of manufacturers.
  • the first chip 6 may be welded to the printed circuit board 5
  • the second chip 7 may be welded to the surface of the first chip 6 away from the printed circuit board 5
  • the third chip 8 Soldered to the surface of the second chip 7 away from the printed circuit board 5
  • the radio frequency amplifying unit 1 can be set and the first radio frequency switch 2 is packaged as the first chip 6, the duplex unit 3 is packaged as the second chip 7, the second radio frequency switch 4 is packaged as the third chip 8, or the radio frequency amplification unit 1 is packaged as the first chip
  • the chip 6, the first radio frequency switch 2 and the duplex unit 3 are packaged as the second chip 7, the second radio frequency switch 4 is packaged as the third chip 8, or the radio frequency amplification unit 1 is packaged as the first chip 6, the first The RF switch 2 is packaged as a second chip 7 , the duplex unit 3 and
  • the diagram on the left side of FIG. 5 may show the arrangement of the pads on the side of the first chip 6 away from the printed circuit board 5 , the arrangement of the pads on the side of the second chip 7 adjacent to and away from the printed circuit board 5 , or the arrangement of the pads on the side of the third chip 8 adjacent to the printed circuit board 5 .
  • the arrangement of the pads on the side of the circuit board 5 , the right side of FIG. 5 shows the arrangement of the pads on the side of the first chip 6 adjacent to the printed circuit board 5 .
  • the first chip 6 is soldered to the printed circuit board 5
  • the second chip 7 is soldered to the surface of the first chip 6 facing away from the printed circuit board 5
  • the third chip 8 is soldered to the surface of the second chip 7 facing away from the printed circuit board 5.
  • the duplex unit 3 is packaged as the second chip 7
  • the second RF switch 4 is packaged as the third chip 8
  • only the In adjacent chips the pads on the bottom of the upper chip and the pads on the top of the lower chip can realize the electrical connection relationship between the first RF switch 2 and the duplex unit 3 and the electrical connection relationship between the duplex unit 3 and the second RF switch 4.
  • the RF amplifier unit 1 is packaged as the first chip 6, the first RF switch 2 and the duplex unit 3 are packaged as the second chip 7, and the second RF switch 4 is packaged as the third chip 8, only the In adjacent chips, the pads on the bottom of the upper chip and the pads on the top of the lower chip can realize the electrical connection relationship between the radio frequency amplification unit 1 and the first radio frequency switch 2 and the duplex unit 3 and the second radio frequency switch 4 .
  • the RF amplifier unit 1 is packaged as the first chip 6
  • the first RF switch 2 is packaged as the second chip 7
  • the duplex unit 3 and the second RF switch 4 are packaged as the third chip 8
  • the The electrical connection relationship between the radio frequency amplification unit 1 and the first radio frequency switch 2 and the first radio frequency switch 2 and the duplex unit 3 can be realized through the pads at the bottom of the upper chip and the pads at the top of the lower chip in the adjacent chips, and the above
  • the input terminal IN of the RF front-end module can be directly connected to the printed circuit board 5 through the pad on the side of the lowermost chip adjacent to the printed circuit board 5 .
  • both the input terminal IN and the output terminal OUT of the RF front-end module in FIG. 1 need to be connected to the printed circuit board 5 , and the input terminal IN can be connected to the printed circuit board 5 through the welding relationship between the first chip 6 and the printed circuit board 5 .
  • Connection, the output terminal OUT is led out from the pad on the side of the third chip 8 adjacent to the printed circuit board 5 , and the connection with the printed circuit board 5 can be realized through the pad passing through the second chip 7 and the pad passing through the first chip 6 .
  • FIG. 10 is a schematic diagram of another RF front-end module packaging structure according to an embodiment of the present disclosure. 1 and 10 , it can be set that the radio frequency amplification unit 1 is packaged as the first chip 6 , the first radio frequency switch 2 is packaged as the second chip 7 , the duplex unit 3 is packaged as the third chip 8 , and the second radio frequency switch 4 is packaged as a fourth chip 9; the first chip 6, the second chip 7, the third chip 8 and the fourth chip 9 are superimposed and welded on the printed circuit board 5 in the direction perpendicular to the printed circuit board 5, the first The chip 6 is soldered to the printed circuit board 5 .
  • FIG. 11 is a schematic diagram of another packaging and disassembling manner of a radio frequency front-end module according to an embodiment of the present disclosure.
  • the radio frequency amplification unit 1 is packaged as a first chip 6
  • the first radio frequency switch 2 is packaged as a second chip 7
  • the duplex unit 3 is packaged as a third chip 8
  • the second radio frequency switch 2 is packaged as a second chip 7 .
  • the switch 4 is packaged as a fourth chip 9 .
  • the radio frequency amplification unit 1 is packaged as the first chip 6
  • the first radio frequency switch 2 is packaged as the second chip 7
  • the duplex unit 3 is packaged as the third chip 8
  • the second radio frequency switch 4 is packaged as the first chip 8.
  • the RF amplifier unit 1 and the duplex unit 3 are packaged in different chips, which makes the frequency band collocation of the RF front-end module more flexible, reduces the design redundancy of the RF front-end module, and improves the RF front-end module.
  • the flexibility of group application relieves the development pressure of manufacturers.
  • the radio frequency amplifier unit 1 is set to be packaged as the first chip 6, and the first chip 6 is welded to the printed circuit board 5, so that the first chip 6 encapsulated with the radio frequency amplifier unit 1 is welded to the printed circuit board 5, and the radio frequency amplifier unit 1 is welded to the printed circuit board 5.
  • the amplifying unit 1 can dissipate heat through the metal layer on the printed circuit board 5 , which is conducive to optimizing the heat dissipation effect of the radio frequency amplifying unit 1 .
  • the radio frequency amplification unit 1 is packaged as the first chip 6
  • the first radio frequency switch 2 is packaged as the second chip 7
  • the duplex unit 3 is packaged as the third chip 8
  • the second radio frequency switch 4 is packaged as the fourth chip 9 5 shows the pad arrangement on the side of the first chip 6 away from the printed circuit board 5, the pad arrangement on the side of the second chip 7 adjacent to and away from the printed circuit board 5, the third chip 8
  • the pad arrangement on the side adjacent to and away from the printed circuit board 5 or the pad arrangement on the side of the fourth chip 9 adjacent to the printed circuit board 5, the right side of FIG. 5 shows the side of the first chip 6 adjacent to the printed circuit board 5 pad settings.
  • the first chip 6 , the second chip 7 , the third chip 8 and the fourth chip 9 are arranged to be stacked and welded on the printed circuit board 5 in the direction perpendicular to the printed circuit board 5 in sequence, that is, the first chip 6 is set to be welded to the printed circuit board 5 .
  • the second chip 7 is soldered to the surface of the first chip 6 facing away from the printed circuit board 5
  • the third chip 8 is soldered to the surface of the second chip 7 facing away from the printed circuit board 5
  • the fourth chip 9 is soldered to the third
  • the chip 8 is away from the surface of the printed circuit board 5, and the upper and lower positions of the package are set according to the connection sequence of the RF amplifier unit 1, the first RF switch 2, the duplex unit 3 and the second RF switch 4 in the RF front-end module, which is beneficial to Simplify the design of the pads at the bottom of the top chip and the top and bottom of the rest of the chips.
  • both the input terminal IN and the output terminal OUT of the RF front-end module in FIG. 1 need to be connected to the printed circuit board 5 , and the input terminal IN can be connected to the printed circuit board 5 through the welding relationship between the first chip 6 and the printed circuit board 5 .
  • the output terminal OUT is drawn from the pad on the side of the fourth chip 9 adjacent to the printed circuit board 5, and can be realized through the pads of the third chip 8, the pads of the second chip 7 and the pads of the first chip 6. Connection to the printed circuit board 5.
  • the chip soldered on the printed circuit board 5 may be provided with a grounding heat dissipation pad 11 on one side adjacent to the printed circuit board 5 .
  • a grounding heat dissipation pad 11 may be provided on the side of the first chip 6 adjacent to the printed circuit board 5, and the grounding heat dissipation pad 11 has a larger area, which is conducive to optimizing the heat dissipation effect of the first chip 6, for example, is conducive to Optimize the heat dissipation effect of the RF amplifier unit 1.
  • the remaining pads 12 in FIG. 5 can be signal transmission pads, which are smaller in area than the grounding heat dissipation pads 11 .
  • FIG. 5 only exemplarily shows the number and arrangement of the pads on the chip surface, the embodiment of the present disclosure does not specifically limit the number and arrangement of the pads on the chip surface, to ensure that the chip Corresponding welding can be achieved between the printed circuit board 5 and the chips.
  • the embodiment of the present disclosure sets the radio frequency amplification unit and the duplex unit to be packaged in different chips, which solves the difference and requirements of the RF front-end module design caused by the radio frequency amplification unit and the duplex unit being packaged in one chip.
  • the change of the RF front-end module requires continuous design and development of new RF front-end modules, resulting in waste of resources such as material cost, so that the design of the RF amplifier unit and the duplex unit can be carried out independently, and the RF amplifier unit can remain relatively stable.
  • the same RF amplifier unit can be maintained, and it can be applied to different countries and regions only by adjusting the duplex unit, making the frequency band collocation of the RF front-end module more flexible , reducing the design redundancy of the RF front-end module, improving the flexibility of the application of the RF front-end module, and relieving the development pressure of manufacturers.
  • at least two chips are arranged along the direction perpendicular to the printed circuit board, superimposed and welded on the printed circuit board, which makes the design of the RF front-end module more compact, reduces the area occupied by the RF front-end module on the printed circuit board, and effectively saves money the layout space of the printed circuit board.
  • Embodiments of the present disclosure also provide a mobile terminal, which includes the packaging structure of the RF front-end module as described in the above embodiments. Therefore, the mobile terminal provided by the embodiments of the present disclosure also has the above beneficial effects, which will not be repeated here.
  • the mobile terminal may be, for example, an electronic device such as a mobile phone or a tablet computer.
  • the packaging structure of the radio frequency front-end module includes a radio frequency amplification unit, a first radio frequency switch, a duplex unit and a second radio frequency switch, which are packaged into at least two chips, and the radio frequency amplification unit and the duplex unit are packaged In different chips, the design of the RF amplifier unit and the duplex unit can be carried out independently, which improves the flexibility of the RF front-end module application, makes the design of the RF front-end module more compact, and effectively saves the layout space of the printed circuit board. , has strong industrial practicability.

Abstract

The present application relates to a package structure for a radio frequency front-end module, and a mobile terminal. The package structure for a radio frequency front-end module comprises a radio frequency amplification unit, a first radio frequency switch, a duplex unit, and a second radio frequency switch; the first radio frequency switch is separately connected to the radio frequency amplification unit and the duplex unit; the duplex unit is connected to the second radio frequency switch; the radio frequency amplification unit, the first radio frequency switch, the duplex unit, and the second radio frequency switch are packaged into at least two chips, and the radio frequency amplification unit and the duplex unit are packaged in different chips; the at least two chips are stacked and soldered on a printed circuit board in a direction perpendicular to the printed circuit board. By means of the technical solution of the present application, design of the radio frequency amplification unit and design of the duplex unit can be performed independently; thus, the flexibility of application of the radio frequency front-end module is improved, the design of the radio frequency front-end module is more compact, and the layout space of the printed circuit board is effectively saved.

Description

一种射频前端模组的封装结构及移动终端A package structure of a radio frequency front-end module and a mobile terminal
本公开要求于2021年1月5日提交中国专利局、申请号为2021100090559、发明名称为“一种射频前端模组的封装结构及移动终端”的中国专利申请的优先权,其全部内容通过引用结合在本公开中。This disclosure claims the priority of the Chinese patent application with the application number 2021100090559 and the invention titled "A package structure of a radio frequency front-end module and a mobile terminal" filed with the China Patent Office on January 5, 2021, the entire contents of which are by reference Incorporated in this disclosure.
技术领域technical field
本公开涉及封装技术领域,尤其涉及一种射频前端模组的封装结构及移动终端。The present disclosure relates to the technical field of packaging, and in particular, to a packaging structure of a radio frequency front-end module and a mobile terminal.
背景技术Background technique
随着5G终端设备的不断发展和演进,5G终端设备需要兼容各个国家和地区,并兼顾设计成本和性能等各个方面。因此,在射频前端模组的选择上,需要综合考虑射频前端模组的小型化以及组合灵活性。With the continuous development and evolution of 5G terminal equipment, 5G terminal equipment needs to be compatible with various countries and regions, taking into account various aspects such as design cost and performance. Therefore, in the selection of RF front-end modules, it is necessary to comprehensively consider the miniaturization and combination flexibility of the RF front-end modules.
从目前可用的射频前端模组来看,射频放大单元和双工单元均集成在射频前端模组中,即射频放大单元和双工单元集成于一个芯片,随着射频前端模组设计的不同以及需求的改变,需要厂家不断开发出新的射频前端模组,即需要使用新的射频前端模组进行匹配,这就造成射频前端模组厂家巨大的开发压力。另一方面,厂家为了避免射频前端模组出现很多型号,会开发出大而全的产品,又会造成芯片面积的增大和物料成本的浪费。From the perspective of the currently available RF front-end modules, the RF amplifier unit and the duplex unit are both integrated in the RF front-end module, that is, the RF amplifier unit and the duplex unit are integrated into one chip. Changes in demand require manufacturers to continuously develop new RF front-end modules, that is, they need to use new RF front-end modules for matching, which results in huge development pressure on RF front-end module manufacturers. On the other hand, in order to avoid many models of RF front-end modules, manufacturers will develop large and comprehensive products, which will increase the chip area and waste material costs.
发明内容SUMMARY OF THE INVENTION
(一)要解决的技术问题(1) Technical problems to be solved
本公开要解决的技术问题是解决射频前端模组厂家开发新的射频前端模组时开发压力巨大、造成芯片面积增大和物料成本浪费的问题。The technical problem to be solved by the present disclosure is to solve the problems of huge development pressure, increased chip area and waste of material cost when RF front-end module manufacturers develop new RF front-end modules.
(二)技术方案(2) Technical solutions
为了解决上述技术问题或者至少部分地解决上述技术问题,本公开提供了一种射频前端模组的封装结构及移动终端,使得射频放大单 元和双工单元的设计可以独立进行,提高了射频前端模组应用的灵活性,使得射频前端模组的设计更加紧凑,有效节省了印刷电路板的布局空间。In order to solve the above technical problems or at least partially solve the above technical problems, the present disclosure provides a packaging structure and a mobile terminal for a radio frequency front-end module, so that the design of the radio frequency amplification unit and the duplex unit can be carried out independently, and the radio frequency front-end module is improved. The flexibility of group application makes the design of the RF front-end module more compact, effectively saving the layout space of the printed circuit board.
第一方面,本公开实施例提供了一种射频前端模组的封装结构,包括:In a first aspect, an embodiment of the present disclosure provides a packaging structure of a radio frequency front-end module, including:
射频放大单元、第一射频开关、双工单元和第二射频开关,所述第一射频开关分别与所述射频放大单元和所述双工单元连接,所述双工单元与所述第二射频开关连接;a radio frequency amplifying unit, a first radio frequency switch, a duplex unit and a second radio frequency switch, the first radio frequency switch is respectively connected to the radio frequency amplifying unit and the duplex unit, and the duplex unit is connected to the second radio frequency switch connection;
所述射频放大单元、所述第一射频开关、所述双工单元和所述第二射频开关被封装为至少两个芯片,所述射频放大单元和所述双工单元被封装在不同的所述芯片中;The radio frequency amplification unit, the first radio frequency switch, the duplex unit and the second radio frequency switch are packaged as at least two chips, and the radio frequency amplification unit and the duplex unit are packaged in different places. in the chip;
所述至少两个芯片沿垂直于印刷电路板的方向,叠加焊接于所述印刷电路板上。The at least two chips are superimposed and soldered on the printed circuit board along a direction perpendicular to the printed circuit board.
可选地,所述双工单元包括至少两条双工通路,所述双工通路用于对射频信号进行滤波;Optionally, the duplex unit includes at least two duplex paths, and the duplex paths are used to filter radio frequency signals;
所述第一射频开关通过其中一条双工通路与所述双工单元连接,所述第二射频开关通过其中一条双工通路与所述双工单元连接。The first radio frequency switch is connected to the duplex unit through one of the duplex paths, and the second radio frequency switch is connected to the duplex unit through one of the duplex paths.
可选地,所述至少两个芯片中,与所述印刷电路板之间距离最大的芯片临近所述印刷电路板的表面设置有多个焊盘,其余芯片背离所述印刷电路板的表面和临近所述印刷电路板的表面均设置有多个焊盘。Optionally, among the at least two chips, the chip with the largest distance from the printed circuit board is provided with a plurality of pads adjacent to the surface of the printed circuit board, and the remaining chips are away from the surface of the printed circuit board and A plurality of pads are arranged adjacent to the surface of the printed circuit board.
可选地,所述射频放大单元、所述第一射频开关、所述双工单元和所述第二射频开关被封装为两个芯片,所述两个芯片包括第一芯片和第二芯片,所述第一芯片和所述第二芯片沿垂直于印刷电路板的方向,叠加焊接于所述印刷电路板上。Optionally, the radio frequency amplification unit, the first radio frequency switch, the duplex unit and the second radio frequency switch are packaged into two chips, and the two chips include a first chip and a second chip, The first chip and the second chip are superimposed and welded on the printed circuit board along a direction perpendicular to the printed circuit board.
可选地,所述第一芯片焊接于所述印刷电路板上,所述第二芯片焊接于所述第一芯片上;Optionally, the first chip is welded on the printed circuit board, and the second chip is welded on the first chip;
所述第一芯片背离所述印刷电路板表面的焊盘与所述第二芯片临近所述印刷电路板表面的焊盘的数量和分布位置相同。The pads of the first chip facing away from the surface of the printed circuit board have the same number and distribution positions as the pads of the second chip adjacent to the surface of the printed circuit board.
可选地,所述射频前端模组的输入端与所述第一芯片临近所述印 刷电路板一侧的焊盘连接;Optionally, the input end of the radio frequency front-end module is connected to the pad on one side of the first chip adjacent to the printed circuit board;
所述射频前端模组的输出端与所述第二芯片临近所述印刷电路板一侧的焊盘连接。The output end of the RF front-end module is connected to the pad on the side of the second chip adjacent to the printed circuit board.
可选地,所述射频放大单元和所述第一射频开关被封装为所述第一芯片,所述双工单元和所述第二射频开关被封装为所述第二芯片;或者,Optionally, the radio frequency amplification unit and the first radio frequency switch are packaged as the first chip, and the duplex unit and the second radio frequency switch are packaged as the second chip; or,
所述射频放大单元被封装为所述第一芯片,所述第一射频开关、所述双工单元和所述第二射频开关被封装为所述第二芯片。The radio frequency amplification unit is packaged as the first chip, and the first radio frequency switch, the duplex unit and the second radio frequency switch are packaged as the second chip.
可选地,所述第一芯片焊接到所述印刷电路板上,所述第二芯片焊接到所述第一芯片背离所述印刷电路板的表面。Optionally, the first chip is soldered to the printed circuit board, and the second chip is soldered to a surface of the first chip facing away from the printed circuit board.
可选地,所述射频放大单元、所述第一射频开关、所述双工单元和所述第二射频开关被封装为三个芯片,所述三个芯片包括第一芯片、第二芯片和第三芯片,所述第一芯片、所述第二芯片和所述第三芯片沿垂直于印刷电路板的方向,叠加焊接于所述印刷电路板上。Optionally, the radio frequency amplification unit, the first radio frequency switch, the duplex unit and the second radio frequency switch are packaged into three chips, and the three chips include a first chip, a second chip and For the third chip, the first chip, the second chip and the third chip are superimposed and welded on the printed circuit board along a direction perpendicular to the printed circuit board.
可选地,所述射频放大单元和所述第一射频开关被封装为所述第一芯片,所述双工单元被封装为所述第二芯片,所述第二射频开关被封装为所述第三芯片;或者,Optionally, the radio frequency amplification unit and the first radio frequency switch are packaged as the first chip, the duplex unit is packaged as the second chip, and the second radio frequency switch is packaged as the first chip a third chip; or,
所述射频放大单元被封装为所述第一芯片,所述第一射频开关和所述双工单元被封装为所述第二芯片,所述第二射频开关被封装为所述第三芯片;或者,The radio frequency amplification unit is packaged as the first chip, the first radio frequency switch and the duplex unit are packaged as the second chip, and the second radio frequency switch is packaged as the third chip; or,
所述射频放大单元被封装为所述第一芯片,所述第一射频开关被封装为所述第二芯片,所述双工单元被和所述第二射频开关被封装为所述第三芯片。The radio frequency amplification unit is packaged as the first chip, the first radio frequency switch is packaged as the second chip, the duplex unit and the second radio frequency switch are packaged as the third chip .
可选地,所述第一芯片焊接到所述印刷电路板上,所述第二芯片焊接到所述第一芯片背离所述印刷电路板的表面,所述第三芯片焊接到所述第二芯片背离所述印刷电路板的表面。Optionally, the first die is soldered to the printed circuit board, the second die is soldered to a surface of the first die facing away from the printed circuit board, and the third die is soldered to the second die The chip faces away from the surface of the printed circuit board.
可选地,所述射频前端模组的输出端与所述第三芯片临近所述印刷电路板一侧的焊盘连接。Optionally, the output end of the RF front-end module is connected to a pad on a side of the third chip adjacent to the printed circuit board.
可选地,所述射频放大单元被封装为第一芯片,所述第一射频开关被封装为第二芯片,所述双工单元被封装为第三芯片,所述第二射 频开关被封装为第四芯片;Optionally, the radio frequency amplification unit is packaged as a first chip, the first radio frequency switch is packaged as a second chip, the duplex unit is packaged as a third chip, and the second radio frequency switch is packaged as a the fourth chip;
所述第一芯片、所述第二芯片、所述第三芯片和所述第四芯片沿垂直于印刷电路板的方向,依次叠加焊接于所述印刷电路板上,所述第一芯片焊接到所述印刷电路板上。The first chip, the second chip, the third chip and the fourth chip are sequentially stacked and welded on the printed circuit board along the direction perpendicular to the printed circuit board, and the first chip is welded to the printed circuit board. on the printed circuit board.
可选地,所述射频前端模组的封装结构还包括:散热焊盘;Optionally, the package structure of the RF front-end module further includes: a heat dissipation pad;
所述散热焊盘设置于所述第一芯片临近于所述印刷电路板的表面上。The heat dissipation pad is disposed on a surface of the first chip adjacent to the printed circuit board.
第二方面,本公开实施例还提供了一种移动终端,包括如第一方面所述的射频前端模组的封装结构。In a second aspect, an embodiment of the present disclosure further provides a mobile terminal, including the packaging structure of the radio frequency front-end module as described in the first aspect.
(三)有益效果(3) Beneficial effects
本公开实施例提供的技术方案与现有技术相比具有如下优点:Compared with the prior art, the technical solutions provided by the embodiments of the present disclosure have the following advantages:
本公开实施例提供的射频前端模组的封装结构包括射频放大单元、第一射频开关、双工单元和第二射频开关,第一射频开关分别与射频放大单元和双工单元连接,双工单元与第二射频开关连接,射频放大单元、第一射频开关、双工单元和第二射频开关被封装为至少两个芯片,射频放大单元和双工单元被封装在不同的芯片中。由此,解决了射频放大单元和双工单元封装在一个芯片内导致的随着射频前端模组设计的不同以及需求的改变,需要不停地进行新的射频前端模组的设计和开发,造成物料成本等资源浪费的问题,使得射频放大单元和双工单元的设计可以独立进行,射频放大单元能够保持相对的稳定和独立,在不同的射频前端模组的设计中,可以保持同样的射频放大单元,只需要对双工单元进行调整即可应用到不同的国家和地区,使得射频前端模组的频段搭配更加灵活,减小了射频前端模组的设计冗余,提高了射频前端模组应用的灵活性,缓解了厂家的开发压力。另外,设置至少两个芯片沿垂直于印刷电路板的方向,叠加焊接于印刷电路板上,使得射频前端模组的设计更加紧凑,减小了射频前端模组占据印刷电路板的面积,有效节省了印刷电路板的布局空间。The packaging structure of the radio frequency front-end module provided by the embodiment of the present disclosure includes a radio frequency amplification unit, a first radio frequency switch, a duplex unit, and a second radio frequency switch. The first radio frequency switch is respectively connected to the radio frequency amplification unit and the duplex unit. The duplex unit Connected with the second radio frequency switch, the radio frequency amplifying unit, the first radio frequency switch, the duplex unit and the second radio frequency switch are packaged into at least two chips, and the radio frequency amplifying unit and the duplex unit are packaged in different chips. As a result, it solves the need to constantly design and develop new RF front-end modules due to the different RF front-end module designs and changes in demand caused by the RF amplifier unit and the duplex unit being packaged in one chip. Due to the waste of resources such as material cost, the design of the RF amplifier unit and the duplex unit can be carried out independently, and the RF amplifier unit can remain relatively stable and independent. In the design of different RF front-end modules, the same RF amplification can be maintained. It can be applied to different countries and regions only by adjusting the duplex unit, which makes the frequency band collocation of the RF front-end module more flexible, reduces the design redundancy of the RF front-end module, and improves the application of the RF front-end module. flexibility, which relieves the development pressure of manufacturers. In addition, at least two chips are arranged along the direction perpendicular to the printed circuit board, superimposed and welded on the printed circuit board, which makes the design of the RF front-end module more compact, reduces the area occupied by the RF front-end module on the printed circuit board, and effectively saves money the layout space of the printed circuit board.
附图说明Description of drawings
此处的附图被并入说明书中并构成本说明书的一部分,示出了符 合本公开的实施例,并与说明书一起用于解释本公开的原理。The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description serve to explain the principles of the disclosure.
为了更清楚地说明本公开实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,对于本领域普通技术人员而言,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the accompanying drawings that are required to be used in the description of the embodiments or the prior art will be briefly introduced below. In other words, on the premise of no creative labor, other drawings can also be obtained from these drawings.
图1为本公开实施例提供的一种射频前端模组的连接结构示意图;1 is a schematic diagram of a connection structure of a radio frequency front-end module according to an embodiment of the present disclosure;
图2为本公开实施例提供的一种射频前端模组封装结构的示意图;FIG. 2 is a schematic diagram of a packaging structure of a radio frequency front-end module according to an embodiment of the present disclosure;
图3为本公开实施例提供的一种射频前端模组的封装拆分方式示意图;FIG. 3 is a schematic diagram of a packaging and disassembling manner of a radio frequency front-end module according to an embodiment of the present disclosure;
图4为本公开实施例提供的一种射频前端模组的封装拆分方式示意图;FIG. 4 is a schematic diagram of a packaging and disassembling manner of a radio frequency front-end module according to an embodiment of the present disclosure;
图5为本公开实施例提供的一种芯片上焊盘设置的示意图;FIG. 5 is a schematic diagram of setting pads on a chip according to an embodiment of the present disclosure;
图6为本公开实施例提供的另一种射频前端模组封装结构的示意图;6 is a schematic diagram of another RF front-end module packaging structure provided by an embodiment of the present disclosure;
图7为本公开实施例提供的另一种射频前端模组的封装拆分方式示意图;FIG. 7 is a schematic diagram of a package and disassembly method of another radio frequency front-end module provided by an embodiment of the present disclosure;
图8为本公开实施例提供的另一种射频前端模组的封装拆分方式示意图;FIG. 8 is a schematic diagram of a packaging and disassembling manner of another radio frequency front-end module provided by an embodiment of the present disclosure;
图9为本公开实施例提供的另一种射频前端模组的封装拆分方式示意图;FIG. 9 is a schematic diagram of a packaging and disassembling manner of another radio frequency front-end module provided by an embodiment of the present disclosure;
图10为本公开实施例提供的另一种射频前端模组封装结构的示意图;10 is a schematic diagram of another RF front-end module packaging structure provided by an embodiment of the present disclosure;
图11为本公开实施例提供的另一种射频前端模组的封装拆分方式示意图。FIG. 11 is a schematic diagram of another packaging and disassembling manner of a radio frequency front-end module according to an embodiment of the present disclosure.
具体实施方式Detailed ways
为了能够更清楚地理解本公开的上述目的、特征和优点,下面将对本公开的方案进行进一步描述。需要说明的是,在不冲突的情况下,本公开的实施例及实施例中的特征可以相互组合。In order to more clearly understand the above objects, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that the embodiments of the present disclosure and the features in the embodiments may be combined with each other under the condition of no conflict.
在下面的描述中阐述了很多具体细节以便于充分理解本公开,但 本公开还可以采用其他不同于在此描述的方式来实施;显然,说明书中的实施例只是本公开的一部分实施例,而不是全部的实施例。Many specific details are set forth in the following description to facilitate a full understanding of the present disclosure, but the present disclosure can also be implemented in other ways different from those described herein; obviously, the embodiments in the specification are only a part of the embodiments of the present disclosure, and Not all examples.
图1为本公开实施例提供的一种射频前端模组的连接结构示意图。如图1所示,射频前端模组的封装结构包括射频放大单元1、第一射频开关2、双工单元3和第二射频开关4,第一射频开关2分别与射频放大单元1和双工单元3连接,双工单元3与第二射频开关4连接。具体地,射频前端模组的输入端IN输入较小的射频信号,射频放大单元1用于对射频前端模组的输入端IN输入的射频信号进行放大,双工单元3包括多条双工通路,双工通路用于对放大后的射频信号进行滤波,第一射频开关2和第二射频开关4用于选择接入射频前端模组的通路,第二射频开关4通过输出端OUT输出滤波后的射频信号。图1示例性地示出双工单元3包括两个双工模块31和一个滤波模块32,双工单元3中与射频放大单元1连接的为射频发射通路,未与射频放大单元1连接的为射频接收通路,双工模块31可以对射频发射通路和射频接收通路进行不同带宽的滤波,滤波模块32仅能对射频发射通路进行设定带宽的滤波。FIG. 1 is a schematic diagram of a connection structure of a radio frequency front-end module according to an embodiment of the present disclosure. As shown in FIG. 1 , the package structure of the RF front-end module includes a RF amplifier unit 1, a first RF switch 2, a duplex unit 3 and a second RF switch 4. The first RF switch 2 is connected to the RF amplifier unit 1 and the duplex unit respectively. The unit 3 is connected, and the duplex unit 3 is connected with the second radio frequency switch 4 . Specifically, the input terminal IN of the radio frequency front-end module inputs a small radio frequency signal, the radio frequency amplification unit 1 is used to amplify the radio frequency signal input by the input terminal IN of the radio frequency front-end module, and the duplex unit 3 includes a plurality of duplex paths , the duplex channel is used to filter the amplified RF signal, the first RF switch 2 and the second RF switch 4 are used to select the channel for accessing the RF front-end module, and the second RF switch 4 outputs the filtered signal through the output terminal OUT. the radio frequency signal. FIG. 1 exemplarily shows that the duplex unit 3 includes two duplex modules 31 and one filter module 32. The radio frequency transmission path in the duplex unit 3 is connected to the radio frequency amplifying unit 1, and the one that is not connected to the radio frequency amplifying unit 1 is the radio frequency transmission path. For the radio frequency receiving channel, the duplex module 31 can filter the radio frequency transmitting channel and the radio frequency receiving channel with different bandwidths, and the filtering module 32 can only filter the radio frequency transmitting channel with a set bandwidth.
图2为本公开实施例提供的一种射频前端模组封装结构的示意图。结合图1和图2,射频放大单元1、第一射频开关2、双工单元3和第二射频开关4被封装为至少两个芯片,图2示例性地设置射频放大单元1、第一射频开关2、双工单元3和第二射频开关4被封装为芯片100和芯片200,射频放大单元1和双工单元3被封装在不同的芯片中。FIG. 2 is a schematic diagram of a packaging structure of a radio frequency front-end module according to an embodiment of the present disclosure. 1 and 2, the radio frequency amplification unit 1, the first radio frequency switch 2, the duplex unit 3 and the second radio frequency switch 4 are packaged into at least two chips, and FIG. 2 exemplarily sets the radio frequency amplification unit 1, the first radio frequency The switch 2 , the duplex unit 3 and the second radio frequency switch 4 are packaged as a chip 100 and a chip 200 , and the radio frequency amplification unit 1 and the duplex unit 3 are packaged in different chips.
从目前可用的射频前端模组来看,射频放大单元和双工单元均集成在射频前端模组中,即射频放大单元和双工单元集成于一个芯片,随着射频前端模组设计的不同以及需求的改变,需要厂家不断开发出新的射频前端模组,即需要使用新的射频前端模组进行匹配,这就造成射频前端模组厂家巨大的开发压力。另一方面,厂家为了避免射频前端模组出现很多型号,会开发出大而全的产品,又会造成芯片面积的增大和物料成本的浪费。From the perspective of the currently available RF front-end modules, the RF amplifier unit and the duplex unit are both integrated in the RF front-end module, that is, the RF amplifier unit and the duplex unit are integrated into one chip. Changes in demand require manufacturers to continuously develop new RF front-end modules, that is, they need to use new RF front-end modules for matching, which results in huge development pressure on RF front-end module manufacturers. On the other hand, in order to avoid many models of RF front-end modules, manufacturers will develop large and comprehensive products, which will increase the chip area and waste material costs.
由此,本公开实施例设置射频放大单元1和双工单元3被封装在不同的芯片中,芯片在搭配使用时,确保有一个封装有射频放大单元1 的芯片和一个封装有双工单元3的芯片可以搭配使用即可。由此,解决了射频放大单元1和双工单元3封装在一个芯片内导致的随着射频前端模组设计的不同以及需求的改变,需要不停地进行新的射频前端模组的设计和开发,造成物料成本等资源浪费的问题,使得射频放大单元1和双工单元3的设计可以独立进行,射频放大单元1能够保持相对的稳定和独立,在不同的射频前端模组的设计中,可以保持同样的射频放大单元1,只需要对双工单元3进行调整就可以应用到不同的国家和地区,使得射频前端模组的频段搭配更加灵活,减小了射频前端模组的设计冗余,提高了射频前端模组应用的灵活性,缓解了厂家的开发压力。Therefore, in the embodiment of the present disclosure, the radio frequency amplifying unit 1 and the duplex unit 3 are set to be packaged in different chips. When the chips are used together, it is ensured that there is one chip encapsulated with the radio frequency amplifying unit 1 and one chip encapsulated with the duplex unit 3 . The chips can be used together. As a result, it solves the need to constantly design and develop new RF front-end modules due to the different RF front-end module designs and changes in demand caused by the RF amplifier unit 1 and the duplex unit 3 being packaged in one chip. , resulting in waste of resources such as material cost, so that the design of the RF amplifier unit 1 and the duplex unit 3 can be carried out independently, and the RF amplifier unit 1 can remain relatively stable and independent. In the design of different RF front-end modules, you can Keeping the same RF amplifier unit 1, it can be applied to different countries and regions only by adjusting the duplex unit 3, which makes the frequency band collocation of the RF front-end module more flexible and reduces the design redundancy of the RF front-end module. It improves the flexibility of RF front-end module application and relieves the development pressure of manufacturers.
结合图1和图2,设置至少两个芯片,例如芯片100和芯片200沿垂直于印刷电路板5的方向,叠加焊接于印刷电路板5上。具体地,将射频前端模组拆分为至少两个模组并设计成可叠加焊接的封装形式,使得射频前端模组的设计更加紧凑,减小了射频前端模组占据印刷电路板5的面积,有效节省了印刷电路板5的布局空间。1 and 2 , at least two chips, for example, chip 100 and chip 200 , are superimposed and soldered on the printed circuit board 5 along a direction perpendicular to the printed circuit board 5 . Specifically, the RF front-end module is divided into at least two modules and designed into a package form that can be superimposed and welded, so that the design of the RF front-end module is more compact, and the area of the printed circuit board 5 occupied by the RF front-end module is reduced. , effectively saving the layout space of the printed circuit board 5 .
可选地,结合图1和图2,至少两个芯片中,设置与印刷电路板5之间距离最大的芯片,例如芯片200临近印刷电路板5的表面设置有多个焊盘,其余芯片,例如芯片100背离印刷电路板5的表面和临近印刷电路板5的表面均设置有多个焊盘,即设置叠加焊接封装结构中,位于最上方的芯片,例如芯片200的底部设置有多个用于焊接的焊盘,其余芯片,例如芯片100的顶部和底部均设置有多个用于焊接的焊盘,位于最下方的芯片,例如芯片100通过底部的焊盘焊接或者贴片在印刷电路板5上,其余芯片,例如芯片200通过底部的焊盘以及位于该芯片200下方芯片100顶部预留的焊盘实现这两个芯片之间的焊接,进而形成叠加焊接的射频前端模组封装结构。由此,使得射频前端模组的设计更加紧凑,减小了射频前端模组占据印刷电路板5的面积,有效节省了印刷电路板5的布局空间。Optionally, with reference to FIG. 1 and FIG. 2 , among at least two chips, the chip with the largest distance from the printed circuit board 5 is set. For example, the surface of the chip 100 facing away from the printed circuit board 5 and the surface adjacent to the printed circuit board 5 are provided with a plurality of pads. For the soldering pads, other chips, such as the top and bottom of the chip 100, are provided with a plurality of soldering pads, and the lowermost chip, such as the chip 100, is soldered or mounted on the printed circuit board through the bottom pads. 5, the remaining chips, such as the chip 200, are welded between the two chips through the pads at the bottom and the pads reserved on the top of the chip 100 below the chip 200, thereby forming a superimposed welding RF front-end module package structure. Therefore, the design of the RF front-end module is made more compact, the area occupied by the RF front-end module on the printed circuit board 5 is reduced, and the layout space of the printed circuit board 5 is effectively saved.
可选地,结合图1和图2,可以设置射频放大单元1、第一射频开关2、双工单元3和第二射频开关4被封装为两个芯片,两个芯片包括第一芯片6和第二芯片7,第一芯片6和第二芯片7沿垂直于印刷电路 板5的方向,叠加焊接于印刷电路板5上。Optionally, in conjunction with FIG. 1 and FIG. 2 , the radio frequency amplification unit 1, the first radio frequency switch 2, the duplex unit 3 and the second radio frequency switch 4 may be packaged into two chips, and the two chips include the first chip 6 and the second radio frequency switch 4. The second chip 7 , the first chip 6 and the second chip 7 are superimposed and soldered on the printed circuit board 5 along the direction perpendicular to the printed circuit board 5 .
图3为本公开实施例提供的一种射频前端模组的封装拆分方式示意图。结合图1至图3,射频放大单元1、第一射频开关2、双工单元3和第二射频开关4被封装为两个芯片时,可以设置射频放大单元1和第一射频开关2被封装为第一芯片6,双工单元3和第二射频开关4被封装为第二芯片7。具体地,设置射频放大单元1和第一射频开关2被封装为第一芯片6,双工单元3和第二射频开关4被封装为第二芯片7,使得射频放大单元1和双工单元3被封装在不同的芯片中,使得射频前端模组的频段搭配更加灵活,减小了射频前端模组的设计冗余,提高了射频前端模组应用的灵活性,缓解了厂家的开发压力。FIG. 3 is a schematic diagram of a packaging and disassembling manner of a radio frequency front-end module according to an embodiment of the present disclosure. 1 to 3, when the radio frequency amplification unit 1, the first radio frequency switch 2, the duplex unit 3 and the second radio frequency switch 4 are packaged into two chips, the radio frequency amplification unit 1 and the first radio frequency switch 2 may be packaged For the first chip 6 , the duplex unit 3 and the second radio frequency switch 4 are packaged as a second chip 7 . Specifically, it is set that the radio frequency amplification unit 1 and the first radio frequency switch 2 are packaged as the first chip 6, and the duplex unit 3 and the second radio frequency switch 4 are packaged as the second chip 7, so that the radio frequency amplification unit 1 and the duplex unit 3 are packaged as the second chip 7. Being packaged in different chips makes the frequency band collocation of the RF front-end module more flexible, reduces the design redundancy of the RF front-end module, improves the flexibility of the application of the RF front-end module, and relieves the development pressure of manufacturers.
图4为本公开实施例提供的一种射频前端模组的封装拆分方式示意图。结合图1、图2和图4,射频放大单元1、第一射频开关2、双工单元3和第二射频开关4被封装为两个芯片时,也可以设置射频放大单元1被封装为第一芯片6,第一射频开关2、双工单元3和第二射频开关4被封装为第二芯片7。同样地,设置射频放大单元1被封装为第一芯片6,第一射频开关2、双工单元3和第二射频开关4被封装为第二芯片7,使得射频放大单元1和双工单元3被封装在不同的芯片中,使得射频前端模组的频段搭配更加灵活,减小了射频前端模组的设计冗余,提高了射频前端模组应用的灵活性,缓解了厂家的开发压力。FIG. 4 is a schematic diagram of a packaging and disassembling manner of a radio frequency front-end module according to an embodiment of the present disclosure. 1 , 2 and 4 , when the RF amplification unit 1 , the first RF switch 2 , the duplex unit 3 and the second RF switch 4 are packaged into two chips, the RF amplification unit 1 may also be packaged as the first RF amplification unit 1 . A chip 6 , the first radio frequency switch 2 , the duplex unit 3 and the second radio frequency switch 4 are packaged as a second chip 7 . Similarly, it is set that the radio frequency amplifying unit 1 is packaged as the first chip 6 , the first radio frequency switch 2 , the duplex unit 3 and the second radio frequency switch 4 are packaged as the second chip 7 , so that the radio frequency amplifying unit 1 and the duplex unit 3 are packaged as the second chip 7 . Being packaged in different chips makes the frequency band collocation of the RF front-end module more flexible, reduces the design redundancy of the RF front-end module, improves the flexibility of the application of the RF front-end module, and relieves the development pressure of manufacturers.
可选地,结合图1至图4,可以设置第一芯片6焊接到印刷电路板5上,第二芯片7焊接到第一芯片6背离印刷电路板5的表面,由于射频放大单元1、第一射频开关2、双工单元3和第二射频开关4被封装为两个芯片时,可以设置射频放大单元1和第一射频开关2被封装为第一芯片6,双工单元3和第二射频开关4被封装为第二芯片7,或者射频放大单元1被封装为第一芯片6,第一射频开关2、双工单元3和第二射频开关4被封装为第二芯片7,实现了将封装有射频放大单元1的第一芯片6焊接于印刷电路板5上,射频放大单元1可以通过印刷电路板5上的金属层进行散热,有利于优化射频放大单元1的散热效果。Optionally, with reference to FIGS. 1 to 4 , the first chip 6 may be soldered to the printed circuit board 5 , and the second chip 7 may be soldered to the surface of the first chip 6 away from the printed circuit board 5 . When a radio frequency switch 2 , a duplex unit 3 and a second radio frequency switch 4 are packaged into two chips, the radio frequency amplification unit 1 and the first radio frequency switch 2 can be packaged as a first chip 6 , and the duplex unit 3 and the second radio frequency switch 4 are packaged as a first chip 6 . The radio frequency switch 4 is packaged as the second chip 7, or the radio frequency amplification unit 1 is packaged as the first chip 6, and the first radio frequency switch 2, the duplex unit 3 and the second radio frequency switch 4 are packaged as the second chip 7, which realizes The first chip 6 encapsulated with the radio frequency amplifier unit 1 is welded on the printed circuit board 5 , and the radio frequency amplifier unit 1 can dissipate heat through the metal layer on the printed circuit board 5 , which is conducive to optimizing the heat dissipation effect of the radio frequency amplifier unit 1 .
另外,设置第一芯片6焊接到印刷电路板5上,第二芯片7焊接 到第一芯片6背离印刷电路板5的表面,依照射频前端模组中的射频放大单元1、第一射频开关2、双工单元3和第二射频开关4的连接顺序进行封装上下位置的设置,有利于简化最上方芯片底部以及其余芯片顶部和底部的焊盘设计。In addition, set the first chip 6 to be welded to the printed circuit board 5, and the second chip 7 to be welded to the surface of the first chip 6 away from the printed circuit board 5, according to the radio frequency amplification unit 1 and the first radio frequency switch 2 in the radio frequency front-end module. , The connection sequence of the duplex unit 3 and the second RF switch 4 is set at the upper and lower positions of the package, which is beneficial to simplify the design of the pads at the bottom of the uppermost chip and the top and bottom of the remaining chips.
例如对于射频放大单元1和第一射频开关2被封装为第一芯片6,双工单元3和第二射频开关4被封装为第二芯片7的情况,仅需要通过相邻芯片中,上方芯片底部的焊盘以及下方芯片顶部的焊盘实现第一射频开关2和双工单元3的电连接关系即可。例如对于射频放大单元1被封装为第一芯片6,第一射频开关2、双工单元3和第二射频开关4被封装为第二芯片7的情况,仅需要通过相邻芯片中,上方芯片底部的焊盘以及下方芯片顶部的焊盘实现射频放大单元1和第一射频开关2的电连接关系即可,且上述情况中射频前端模组的输入端IN可以直接通过最下方的芯片临近印刷电路板5一侧的焊盘实现与印刷电路板5的连接。For example, in the case where the radio frequency amplification unit 1 and the first radio frequency switch 2 are packaged as the first chip 6, and the duplex unit 3 and the second radio frequency switch 4 are packaged as the second chip 7, it is only necessary to pass through the adjacent chips, the upper chip The pads on the bottom and the pads on the top of the lower chip can realize the electrical connection relationship between the first radio frequency switch 2 and the duplex unit 3 . For example, in the case where the RF amplifier unit 1 is packaged as the first chip 6, and the first RF switch 2, the duplex unit 3 and the second RF switch 4 are packaged as the second chip 7, it only needs to pass through the adjacent chips, the upper chip The pad on the bottom and the pad on the top of the lower chip can realize the electrical connection relationship between the RF amplification unit 1 and the first RF switch 2, and in the above case, the input terminal IN of the RF front-end module can be directly printed through the lowermost chip. The pads on one side of the circuit board 5 realize the connection with the printed circuit board 5 .
图5为本公开实施例提供的一种芯片上焊盘设置的示意图。结合图1至图5,图5中左侧图表示的可以是第一芯片6背离印刷电路板5一侧的焊盘设置或者第二芯片7临近印刷电路板5一侧的焊盘设置,图5中右侧图表示的可以是第一芯片6临近印刷电路板5一侧的焊盘设置。具体地,第一芯片6通过第一芯片6临近印刷电路板5一侧的焊盘焊接在印刷电路板5上,第一芯片6背离印刷电路板5一侧的焊盘与第二芯片7临近印刷电路板5一侧的焊盘的数量和分布位置相同,第二芯片7通过第二芯片7临近印刷电路板5一侧的焊盘以及第一芯片6背离印刷电路板5一侧的焊盘焊接到第一芯片6。FIG. 5 is a schematic diagram of an on-chip pad arrangement according to an embodiment of the present disclosure. With reference to FIGS. 1 to 5 , the diagram on the left side of FIG. 5 may be the arrangement of the pads on the side of the first chip 6 away from the printed circuit board 5 or the arrangement of the pads on the side of the second chip 7 adjacent to the printed circuit board 5 . The figure on the right in 5 may be the arrangement of the pads on the side of the first chip 6 adjacent to the printed circuit board 5 . Specifically, the first chip 6 is soldered on the printed circuit board 5 through the pads on the side of the first chip 6 adjacent to the printed circuit board 5 , and the pads on the side of the first chip 6 away from the printed circuit board 5 are adjacent to the second chip 7 The number and distribution of the pads on the side of the printed circuit board 5 are the same, and the second chip 7 passes through the pads on the side of the second chip 7 adjacent to the printed circuit board 5 and the first chip 6 on the side away from the printed circuit board 5 . Solder to the first chip 6 .
另外,图1中射频前端模组的输入端IN和输出端OUT均需要与印刷电路板5连接,输入端IN可以通过第一芯片6与印刷电路板5的焊接关系实现与印刷电路板5的连接,输出端OUT由第二芯片7临近印刷电路板5一侧的焊盘引出,经由贯穿第一芯片6的焊盘可实现与印刷电路板5的连接。In addition, both the input terminal IN and the output terminal OUT of the RF front-end module in FIG. 1 need to be connected to the printed circuit board 5 , and the input terminal IN can be connected to the printed circuit board 5 through the welding relationship between the first chip 6 and the printed circuit board 5 . For connection, the output terminal OUT is led out from the pad on the side of the second chip 7 adjacent to the printed circuit board 5 , and the connection with the printed circuit board 5 can be realized through the pad passing through the first chip 6 .
图6为本公开实施例提供的另一种射频前端模组封装结构的示意图。结合图1和图6,可以设置射频放大单元1、第一射频开关2、双 工单元3和第二射频开关4被封装为三个芯片,三个芯片包括第一芯片6、第二芯片7和第三芯片8,第一芯片6、第二芯片7和第三芯片8沿垂直于印刷电路板5的方向,叠加焊接于印刷电路板5上。FIG. 6 is a schematic diagram of another RF front-end module packaging structure according to an embodiment of the present disclosure. 1 and 6 , the radio frequency amplification unit 1 , the first radio frequency switch 2 , the duplex unit 3 and the second radio frequency switch 4 can be packaged into three chips, and the three chips include a first chip 6 and a second chip 7 and the third chip 8 , the first chip 6 , the second chip 7 and the third chip 8 are superimposed and welded on the printed circuit board 5 along the direction perpendicular to the printed circuit board 5 .
图7为本公开实施例提供的另一种射频前端模组的封装拆分方式示意图。结合图1、图6和图7,射频放大单元1、第一射频开关2、双工单元3和第二射频开关4被封装为三个芯片时,可以设置射频放大单元1和第一射频开关2被封装为第一芯片6,双工单元3被封装为第二芯片7,第二射频开关4被封装为第三芯片8。具体地,设置射频放大单元1和第一射频开关2被封装为第一芯片6,双工单元3被封装为第二芯片7,第二射频开关4被封装为第三芯片8,使得射频放大单元1和双工单元3被封装在不同的芯片中,使得射频前端模组的频段搭配更加灵活,减小了射频前端模组的设计冗余,提高了射频前端模组应用的灵活性,缓解了厂家的开发压力。FIG. 7 is a schematic diagram of another packaging and disassembling manner of a radio frequency front-end module according to an embodiment of the present disclosure. 1 , 6 and 7 , when the radio frequency amplifying unit 1 , the first radio frequency switch 2 , the duplex unit 3 and the second radio frequency switch 4 are packaged into three chips, the radio frequency amplifying unit 1 and the first radio frequency switch can be set 2 is packaged as the first chip 6 , the duplex unit 3 is packaged as the second chip 7 , and the second radio frequency switch 4 is packaged as the third chip 8 . Specifically, it is set that the radio frequency amplification unit 1 and the first radio frequency switch 2 are packaged as the first chip 6, the duplex unit 3 is packaged as the second chip 7, and the second radio frequency switch 4 is packaged as the third chip 8, so that the radio frequency amplification Unit 1 and duplex unit 3 are packaged in different chips, which makes the frequency band collocation of the RF front-end module more flexible, reduces the design redundancy of the RF front-end module, improves the flexibility of the application of the RF front-end module, and alleviates the The development pressure of manufacturers.
图8为本公开实施例提供的另一种射频前端模组的封装拆分方式示意图。结合图1、图6和图8,射频放大单元1、第一射频开关2、双工单元3和第二射频开关4被封装为三个芯片时,可以设置射频放大单元1被封装为第一芯片6,第一射频开关2和双工单元3被封装为第二芯片7,第二射频开关4被封装为第三芯片8。具体地,设置射频放大单元1被封装为第一芯片6,第一射频开关2和双工单元3被封装为第二芯片7,第二射频开关4被封装为第三芯片8,使得射频放大单元1和双工单元3被封装在不同的芯片中,使得射频前端模组的频段搭配更加灵活,减小了射频前端模组的设计冗余,提高了射频前端模组应用的灵活性,缓解了厂家的开发压力。FIG. 8 is a schematic diagram of another packaging and disassembling manner of a radio frequency front-end module according to an embodiment of the present disclosure. 1 , 6 and 8 , when the radio frequency amplifying unit 1 , the first radio frequency switch 2 , the duplex unit 3 and the second radio frequency switch 4 are packaged into three chips, the radio frequency amplifying unit 1 may be packaged as the first The chip 6 , the first RF switch 2 and the duplex unit 3 are packaged as a second chip 7 , and the second RF switch 4 is packaged as a third chip 8 . Specifically, it is set that the RF amplification unit 1 is packaged as the first chip 6, the first RF switch 2 and the duplex unit 3 are packaged as the second chip 7, and the second RF switch 4 is packaged as the third chip 8, so that the RF amplification Unit 1 and duplex unit 3 are packaged in different chips, which makes the frequency band collocation of the RF front-end module more flexible, reduces the design redundancy of the RF front-end module, improves the flexibility of the application of the RF front-end module, and alleviates the The development pressure of manufacturers.
图9为本公开实施例提供的另一种射频前端模组的封装拆分方式示意图。结合图1、图6和图9,射频放大单元1、第一射频开关2、双工单元3和第二射频开关4被封装为三个芯片时,可以设置射频放大单元1被封装为第一芯片6,第一射频开关2被封装为第二芯片7,双工单元3被和第二射频开关4被封装为第三芯片8。具体地,设置射频放大单元1被封装为第一芯片6,第一射频开关2被封装为第二芯片7,双工单元3被和第二射频开关4被封装为第三芯片8,使得射频放 大单元1和双工单元3被封装在不同的芯片中,使得射频前端模组的频段搭配更加灵活,减小了射频前端模组的设计冗余,提高了射频前端模组应用的灵活性,缓解了厂家的开发压力。FIG. 9 is a schematic diagram of another packaging and disassembling manner of a radio frequency front-end module according to an embodiment of the present disclosure. 1 , 6 and 9 , when the radio frequency amplifying unit 1 , the first radio frequency switch 2 , the duplex unit 3 and the second radio frequency switch 4 are packaged into three chips, the radio frequency amplifying unit 1 may be packaged as the first The chip 6 , the first radio frequency switch 2 are packaged as the second chip 7 , the duplex unit 3 and the second radio frequency switch 4 are packaged as the third chip 8 . Specifically, it is set that the radio frequency amplification unit 1 is packaged as the first chip 6, the first radio frequency switch 2 is packaged as the second chip 7, the duplex unit 3 and the second radio frequency switch 4 are packaged as the third chip 8, so that the radio frequency The amplification unit 1 and the duplex unit 3 are packaged in different chips, which makes the frequency band collocation of the RF front-end module more flexible, reduces the design redundancy of the RF front-end module, and improves the flexibility of the application of the RF front-end module. Alleviate the development pressure of manufacturers.
可选地,结合图1以及图6至图9,可以设置第一芯片6焊接到印刷电路板5上,第二芯片7焊接到第一芯片6背离印刷电路板5的表面,第三芯片8焊接到第二芯片7背离印刷电路板5的表面,由于射频放大单元1、第一射频开关2、双工单元3和第二射频开关4被封装为三个芯片时,可以设置射频放大单元1和第一射频开关2被封装为第一芯片6,双工单元3被封装为第二芯片7,第二射频开关4被封装为第三芯片8,或者设置射频放大单元1被封装为第一芯片6,第一射频开关2和双工单元3被封装为第二芯片7,第二射频开关4被封装为第三芯片8,或者设置射频放大单元1被封装为第一芯片6,第一射频开关2被封装为第二芯片7,双工单元3被和第二射频开关4被封装为第三芯片8,实现了将封装有射频放大单元1的第一芯片6焊接于印刷电路板5上,射频放大单元1可以通过印刷电路板5上的金属层进行散热,有利于优化射频放大单元1的散热效果。Optionally, with reference to FIG. 1 and FIG. 6 to FIG. 9 , the first chip 6 may be welded to the printed circuit board 5 , the second chip 7 may be welded to the surface of the first chip 6 away from the printed circuit board 5 , and the third chip 8 Soldered to the surface of the second chip 7 away from the printed circuit board 5, since the radio frequency amplifying unit 1, the first radio frequency switch 2, the duplex unit 3 and the second radio frequency switch 4 are packaged into three chips, the radio frequency amplifying unit 1 can be set and the first radio frequency switch 2 is packaged as the first chip 6, the duplex unit 3 is packaged as the second chip 7, the second radio frequency switch 4 is packaged as the third chip 8, or the radio frequency amplification unit 1 is packaged as the first chip The chip 6, the first radio frequency switch 2 and the duplex unit 3 are packaged as the second chip 7, the second radio frequency switch 4 is packaged as the third chip 8, or the radio frequency amplification unit 1 is packaged as the first chip 6, the first The RF switch 2 is packaged as a second chip 7 , the duplex unit 3 and the second RF switch 4 are packaged as a third chip 8 , and the first chip 6 packaged with the RF amplifier unit 1 is soldered to the printed circuit board 5 . On the other hand, the radio frequency amplifying unit 1 can dissipate heat through the metal layer on the printed circuit board 5 , which is beneficial to optimize the heat dissipation effect of the radio frequency amplifying unit 1 .
设置第一芯片6焊接到印刷电路板5上,第二芯片7焊接到第一芯片6背离印刷电路板5的表面,第三芯片8焊接到第二芯片7背离印刷电路板5的表面时,图5中左侧图表示的可以是第一芯片6背离印刷电路板5一侧的焊盘设置、第二芯片7临近和背离印刷电路板5一侧的焊盘设置或者第三芯片8临近印刷电路板5一侧的焊盘设置,图5中右侧图表示的是第一芯片6临近印刷电路板5一侧的焊盘设置。When the first chip 6 is welded to the printed circuit board 5, the second chip 7 is welded to the surface of the first chip 6 away from the printed circuit board 5, and the third chip 8 is welded to the surface of the second chip 7 away from the printed circuit board 5, The diagram on the left side of FIG. 5 may show the arrangement of the pads on the side of the first chip 6 away from the printed circuit board 5 , the arrangement of the pads on the side of the second chip 7 adjacent to and away from the printed circuit board 5 , or the arrangement of the pads on the side of the third chip 8 adjacent to the printed circuit board 5 . The arrangement of the pads on the side of the circuit board 5 , the right side of FIG. 5 shows the arrangement of the pads on the side of the first chip 6 adjacent to the printed circuit board 5 .
另外,设置第一芯片6焊接到印刷电路板5上,第二芯片7焊接到第一芯片6背离印刷电路板5的表面,第三芯片8焊接到第二芯片7背离印刷电路板5的表面,依照射频前端模组中的射频放大单元1、第一射频开关2、双工单元3和第二射频开关4的连接顺序进行封装上下位置的设置,有利于简化最上方芯片底部以及其余芯片顶部和底部的焊盘设计。In addition, the first chip 6 is soldered to the printed circuit board 5, the second chip 7 is soldered to the surface of the first chip 6 facing away from the printed circuit board 5, and the third chip 8 is soldered to the surface of the second chip 7 facing away from the printed circuit board 5. , according to the connection sequence of the RF amplifier unit 1, the first RF switch 2, the duplex unit 3 and the second RF switch 4 in the RF front-end module, the upper and lower positions of the package are set, which is beneficial to simplify the bottom of the top chip and the top of the other chips. and pad design at the bottom.
例如对于射频放大单元1和第一射频开关2被封装为第一芯片6,双工单元3被封装为第二芯片7,第二射频开关4被封装为第三芯片8 的情况,仅需要通过相邻芯片中,上方芯片底部的焊盘以及下方芯片顶部的焊盘实现第一射频开关2和双工单元3的电连接关系以及双工单元3和第二射频开关4的电连接关系即可。例如对于射频放大单元1被封装为第一芯片6,第一射频开关2和双工单元3被封装为第二芯片7,第二射频开关4被封装为第三芯片8的情况,仅需要通过相邻芯片中,上方芯片底部的焊盘以及下方芯片顶部的焊盘实现射频放大单元1和第一射频开关2以及双工单元3和第二射频开关4的电连接关系即可。例如对于射频放大单元1被封装为第一芯片6,第一射频开关2被封装为第二芯片7,双工单元3被和第二射频开关4被封装为第三芯片8的情况,仅需要通过相邻芯片中,上方芯片底部的焊盘以及下方芯片顶部的焊盘实现射频放大单元1和第一射频开关2以及第一射频开关2和双工单元3的电连接关系即可,且上述情况中,射频前端模组的输入端IN均可以直接通过最下方的芯片临近印刷电路板5一侧的焊盘实现与印刷电路板5的连接。For example, in the case where the RF amplifier unit 1 and the first RF switch 2 are packaged as the first chip 6, the duplex unit 3 is packaged as the second chip 7, and the second RF switch 4 is packaged as the third chip 8, only the In adjacent chips, the pads on the bottom of the upper chip and the pads on the top of the lower chip can realize the electrical connection relationship between the first RF switch 2 and the duplex unit 3 and the electrical connection relationship between the duplex unit 3 and the second RF switch 4. . For example, in the case where the RF amplifier unit 1 is packaged as the first chip 6, the first RF switch 2 and the duplex unit 3 are packaged as the second chip 7, and the second RF switch 4 is packaged as the third chip 8, only the In adjacent chips, the pads on the bottom of the upper chip and the pads on the top of the lower chip can realize the electrical connection relationship between the radio frequency amplification unit 1 and the first radio frequency switch 2 and the duplex unit 3 and the second radio frequency switch 4 . For example, in the case where the RF amplifier unit 1 is packaged as the first chip 6 , the first RF switch 2 is packaged as the second chip 7 , the duplex unit 3 and the second RF switch 4 are packaged as the third chip 8 , only the The electrical connection relationship between the radio frequency amplification unit 1 and the first radio frequency switch 2 and the first radio frequency switch 2 and the duplex unit 3 can be realized through the pads at the bottom of the upper chip and the pads at the top of the lower chip in the adjacent chips, and the above In this case, the input terminal IN of the RF front-end module can be directly connected to the printed circuit board 5 through the pad on the side of the lowermost chip adjacent to the printed circuit board 5 .
另外,图1中射频前端模组的输入端IN和输出端OUT均需要与印刷电路板5连接,输入端IN可以通过第一芯片6与印刷电路板5的焊接关系实现与印刷电路板5的连接,输出端OUT由第三芯片8临近印刷电路板5一侧的焊盘引出,经由贯穿第二芯片7的焊盘以及贯穿第一芯片6的焊盘可实现与印刷电路板5的连接。In addition, both the input terminal IN and the output terminal OUT of the RF front-end module in FIG. 1 need to be connected to the printed circuit board 5 , and the input terminal IN can be connected to the printed circuit board 5 through the welding relationship between the first chip 6 and the printed circuit board 5 . Connection, the output terminal OUT is led out from the pad on the side of the third chip 8 adjacent to the printed circuit board 5 , and the connection with the printed circuit board 5 can be realized through the pad passing through the second chip 7 and the pad passing through the first chip 6 .
图10为本公开实施例提供的另一种射频前端模组封装结构的示意图。结合图1和图10,可以设置射频放大单元1被封装为第一芯片6,第一射频开关2被封装为第二芯片7,双工单元3被封装为第三芯片8,第二射频开关4被封装为第四芯片9;第一芯片6、第二芯片7、第三芯片8和第四芯片9沿垂直于印刷电路板5的方向,依次叠加焊接于印刷电路板5上,第一芯片6焊接到印刷电路板5上。FIG. 10 is a schematic diagram of another RF front-end module packaging structure according to an embodiment of the present disclosure. 1 and 10 , it can be set that the radio frequency amplification unit 1 is packaged as the first chip 6 , the first radio frequency switch 2 is packaged as the second chip 7 , the duplex unit 3 is packaged as the third chip 8 , and the second radio frequency switch 4 is packaged as a fourth chip 9; the first chip 6, the second chip 7, the third chip 8 and the fourth chip 9 are superimposed and welded on the printed circuit board 5 in the direction perpendicular to the printed circuit board 5, the first The chip 6 is soldered to the printed circuit board 5 .
图11为本公开实施例提供的另一种射频前端模组的封装拆分方式示意图。结合图1、图10和图11,射频放大单元1被封装为第一芯片6,第一射频开关2被封装为第二芯片7,双工单元3被封装为第三芯片8,第二射频开关4被封装为第四芯片9。具体地,设置射频放大单元1被封装为第一芯片6,第一射频开关2被封装为第二芯片7,双工 单元3被封装为第三芯片8,第二射频开关4被封装为第四芯片9,使得射频放大单元1和双工单元3被封装在不同的芯片中,使得射频前端模组的频段搭配更加灵活,减小了射频前端模组的设计冗余,提高了射频前端模组应用的灵活性,缓解了厂家的开发压力。FIG. 11 is a schematic diagram of another packaging and disassembling manner of a radio frequency front-end module according to an embodiment of the present disclosure. 1 , 10 and 11 , the radio frequency amplification unit 1 is packaged as a first chip 6 , the first radio frequency switch 2 is packaged as a second chip 7 , the duplex unit 3 is packaged as a third chip 8 , and the second radio frequency switch 2 is packaged as a second chip 7 . The switch 4 is packaged as a fourth chip 9 . Specifically, it is set that the radio frequency amplification unit 1 is packaged as the first chip 6, the first radio frequency switch 2 is packaged as the second chip 7, the duplex unit 3 is packaged as the third chip 8, and the second radio frequency switch 4 is packaged as the first chip 8. Four chips 9, so that the RF amplifier unit 1 and the duplex unit 3 are packaged in different chips, which makes the frequency band collocation of the RF front-end module more flexible, reduces the design redundancy of the RF front-end module, and improves the RF front-end module. The flexibility of group application relieves the development pressure of manufacturers.
另外,设置射频放大单元1被封装为第一芯片6,第一芯片6焊接到印刷电路板5上,实现了将封装有射频放大单元1的第一芯片6焊接于印刷电路板5上,射频放大单元1可以通过印刷电路板5上的金属层进行散热,有利于优化射频放大单元1的散热效果。In addition, the radio frequency amplifier unit 1 is set to be packaged as the first chip 6, and the first chip 6 is welded to the printed circuit board 5, so that the first chip 6 encapsulated with the radio frequency amplifier unit 1 is welded to the printed circuit board 5, and the radio frequency amplifier unit 1 is welded to the printed circuit board 5. The amplifying unit 1 can dissipate heat through the metal layer on the printed circuit board 5 , which is conducive to optimizing the heat dissipation effect of the radio frequency amplifying unit 1 .
设置射频放大单元1被封装为第一芯片6,第一射频开关2被封装为第二芯片7,双工单元3被封装为第三芯片8,第二射频开关4被封装为第四芯片9时,图5中左侧图表示的可以是第一芯片6背离印刷电路板5一侧的焊盘设置、第二芯片7临近和背离印刷电路板5一侧的焊盘设置、第三芯片8临近和背离印刷电路板5一侧的焊盘设置或者第四芯片9临近印刷电路板5一侧的焊盘设置,图5中右侧图表示的是第一芯片6临近印刷电路板5一侧的焊盘设置。It is set that the radio frequency amplification unit 1 is packaged as the first chip 6 , the first radio frequency switch 2 is packaged as the second chip 7 , the duplex unit 3 is packaged as the third chip 8 , and the second radio frequency switch 4 is packaged as the fourth chip 9 5 shows the pad arrangement on the side of the first chip 6 away from the printed circuit board 5, the pad arrangement on the side of the second chip 7 adjacent to and away from the printed circuit board 5, the third chip 8 The pad arrangement on the side adjacent to and away from the printed circuit board 5 or the pad arrangement on the side of the fourth chip 9 adjacent to the printed circuit board 5, the right side of FIG. 5 shows the side of the first chip 6 adjacent to the printed circuit board 5 pad settings.
另外,设置第一芯片6、第二芯片7、第三芯片8和第四芯片9沿垂直于印刷电路板5的方向,依次叠加焊接于印刷电路板5上,即设置第一芯片6焊接到印刷电路板5上,第二芯片7焊接到第一芯片6背离印刷电路板5的表面,第三芯片8焊接到第二芯片7背离印刷电路板5的表面,第四芯片9焊接到第三芯片8背离印刷电路板5的表面,依照射频前端模组中的射频放大单元1、第一射频开关2、双工单元3和第二射频开关4的连接顺序进行封装上下位置的设置,有利于简化最上方芯片底部以及其余芯片顶部和底部的焊盘设计,仅需要通过相邻芯片中,上方芯片底部的焊盘以及下方芯片顶部的焊盘实现射频放大单元1和第一射频开关2、第一射频开关2和双工单元3以及双工单元3和第二射频开关4的电连接关系即可。In addition, the first chip 6 , the second chip 7 , the third chip 8 and the fourth chip 9 are arranged to be stacked and welded on the printed circuit board 5 in the direction perpendicular to the printed circuit board 5 in sequence, that is, the first chip 6 is set to be welded to the printed circuit board 5 . On the printed circuit board 5, the second chip 7 is soldered to the surface of the first chip 6 facing away from the printed circuit board 5, the third chip 8 is soldered to the surface of the second chip 7 facing away from the printed circuit board 5, and the fourth chip 9 is soldered to the third The chip 8 is away from the surface of the printed circuit board 5, and the upper and lower positions of the package are set according to the connection sequence of the RF amplifier unit 1, the first RF switch 2, the duplex unit 3 and the second RF switch 4 in the RF front-end module, which is beneficial to Simplify the design of the pads at the bottom of the top chip and the top and bottom of the rest of the chips. Only the pads on the bottom of the upper chip and the pads on the top of the lower chip in the adjacent chips are used to realize the RF amplification unit 1, the first RF switch 2, and the first RF switch. An electrical connection relationship between the radio frequency switch 2 and the duplex unit 3 and the duplex unit 3 and the second radio frequency switch 4 is sufficient.
另外,图1中射频前端模组的输入端IN和输出端OUT均需要与印刷电路板5连接,输入端IN可以通过第一芯片6与印刷电路板5的焊接关系实现与印刷电路板5的连接,输出端OUT由第四芯片9临近印刷电路板5一侧的焊盘引出,经由贯穿第三芯片8的焊盘、第二芯 片7的焊盘以及贯穿第一芯片6的焊盘可实现与印刷电路板5的连接。In addition, both the input terminal IN and the output terminal OUT of the RF front-end module in FIG. 1 need to be connected to the printed circuit board 5 , and the input terminal IN can be connected to the printed circuit board 5 through the welding relationship between the first chip 6 and the printed circuit board 5 . Connection, the output terminal OUT is drawn from the pad on the side of the fourth chip 9 adjacent to the printed circuit board 5, and can be realized through the pads of the third chip 8, the pads of the second chip 7 and the pads of the first chip 6. Connection to the printed circuit board 5.
可选地,结合图1至图11,可以设置焊接于印刷电路板5上的芯片临近印刷电路板5的一侧设置有接地散热焊盘11。示例性地,可以设置第一芯片6临近印刷电路板5的一侧设置有接地散热焊盘11,接地散热焊盘11的面积较大,有利于优化第一芯片6的散热效果,例如有利于优化射频放大单元1的散热效果。图5中其余的焊盘12则可以为信号传输焊盘,相较于接地散热焊盘11面积更小。Optionally, with reference to FIG. 1 to FIG. 11 , the chip soldered on the printed circuit board 5 may be provided with a grounding heat dissipation pad 11 on one side adjacent to the printed circuit board 5 . Exemplarily, a grounding heat dissipation pad 11 may be provided on the side of the first chip 6 adjacent to the printed circuit board 5, and the grounding heat dissipation pad 11 has a larger area, which is conducive to optimizing the heat dissipation effect of the first chip 6, for example, is conducive to Optimize the heat dissipation effect of the RF amplifier unit 1. The remaining pads 12 in FIG. 5 can be signal transmission pads, which are smaller in area than the grounding heat dissipation pads 11 .
需要说明的是,图5仅示例性地示出了焊盘在芯片表面的设置数量和排布方式,本公开实施例对焊盘在芯片表面的设置数量和排布方式不作具体限定,确保芯片与印刷电路板5之间以及芯片与芯片之间实现对应的焊接即可。It should be noted that FIG. 5 only exemplarily shows the number and arrangement of the pads on the chip surface, the embodiment of the present disclosure does not specifically limit the number and arrangement of the pads on the chip surface, to ensure that the chip Corresponding welding can be achieved between the printed circuit board 5 and the chips.
综上,本公开实施例设置射频放大单元和双工单元被封装在不同的芯片中,解决了射频放大单元和双工单元封装在一个芯片内导致的随着射频前端模组设计的不同以及需求的改变,需要不停地进行新的射频前端模组的设计和开发,造成物料成本等资源浪费的问题,使得射频放大单元和双工单元的设计可以独立进行,射频放大单元能够保持相对的稳定和独立,在不同的射频前端模组的设计中,可以保持同样的射频放大单元,只需要对双工单元进行调整即可应用到不同的国家和地区,使得射频前端模组的频段搭配更加灵活,减小了射频前端模组的设计冗余,提高了射频前端模组应用的灵活性,缓解了厂家的开发压力。另外,设置至少两个芯片沿垂直于印刷电路板的方向,叠加焊接于印刷电路板上,使得射频前端模组的设计更加紧凑,减小了射频前端模组占据印刷电路板的面积,有效节省了印刷电路板的布局空间。In summary, the embodiment of the present disclosure sets the radio frequency amplification unit and the duplex unit to be packaged in different chips, which solves the difference and requirements of the RF front-end module design caused by the radio frequency amplification unit and the duplex unit being packaged in one chip. The change of the RF front-end module requires continuous design and development of new RF front-end modules, resulting in waste of resources such as material cost, so that the design of the RF amplifier unit and the duplex unit can be carried out independently, and the RF amplifier unit can remain relatively stable. and independent, in the design of different RF front-end modules, the same RF amplifier unit can be maintained, and it can be applied to different countries and regions only by adjusting the duplex unit, making the frequency band collocation of the RF front-end module more flexible , reducing the design redundancy of the RF front-end module, improving the flexibility of the application of the RF front-end module, and relieving the development pressure of manufacturers. In addition, at least two chips are arranged along the direction perpendicular to the printed circuit board, superimposed and welded on the printed circuit board, which makes the design of the RF front-end module more compact, reduces the area occupied by the RF front-end module on the printed circuit board, and effectively saves money the layout space of the printed circuit board.
本公开实施例还提供了一种移动终端,移动终端包括如上述实施例所述的射频前端模组的封装结构,因此本公开实施例提供的移动终端也具备上述有益效果,这里不再赘述。示例性地,移动终端例如可以为手机或者平板电脑等电子设备。Embodiments of the present disclosure also provide a mobile terminal, which includes the packaging structure of the RF front-end module as described in the above embodiments. Therefore, the mobile terminal provided by the embodiments of the present disclosure also has the above beneficial effects, which will not be repeated here. Exemplarily, the mobile terminal may be, for example, an electronic device such as a mobile phone or a tablet computer.
需要说明的是,在本文中,诸如“第一”和“第二”等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来, 而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包括要素的过程、方法、物品或者设备中还存在另外的相同要素。It should be noted that, in this document, relational terms such as "first" and "second" etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply these There is no such actual relationship or sequence between entities or operations. Moreover, the terms "comprising", "comprising" or any other variation thereof are intended to encompass a non-exclusive inclusion such that a process, method, article or device that includes a list of elements includes not only those elements, but also includes not explicitly listed or other elements inherent to such a process, method, article or apparatus. Without further limitation, an element qualified by the phrase "comprising a..." does not preclude the presence of additional identical elements in the process, method, article, or device that includes the element.
以上仅是本公开的具体实施方式,使本领域技术人员能够理解或实现本公开。对这些实施例的多种修改对本领域的技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本公开的精神或范围的情况下,在其它实施例中实现。因此,本公开将不会被限制于本文的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。The above are only specific embodiments of the present disclosure, so that those skilled in the art can understand or implement the present disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present disclosure. Therefore, the present disclosure is not to be limited to the embodiments herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
工业实用性Industrial Applicability
本公开提供的射频前端模组的封装结构包括射频放大单元、第一射频开关、双工单元和第二射频开关,将其封装为至少两个芯片,通过将射频放大单元和双工单元被封装在不同的芯片中,使得射频放大单元和双工单元的设计可以独立进行,提高了射频前端模组应用的灵活性,使得射频前端模组的设计更加紧凑,有效节省了印刷电路板的布局空间,具有很强的工业实用性。The packaging structure of the radio frequency front-end module provided by the present disclosure includes a radio frequency amplification unit, a first radio frequency switch, a duplex unit and a second radio frequency switch, which are packaged into at least two chips, and the radio frequency amplification unit and the duplex unit are packaged In different chips, the design of the RF amplifier unit and the duplex unit can be carried out independently, which improves the flexibility of the RF front-end module application, makes the design of the RF front-end module more compact, and effectively saves the layout space of the printed circuit board. , has strong industrial practicability.

Claims (15)

  1. 一种射频前端模组的封装结构,其特征在于,包括:A package structure of a radio frequency front-end module, characterized in that it includes:
    射频放大单元、第一射频开关、双工单元和第二射频开关,所述第一射频开关分别与所述射频放大单元和所述双工单元连接,所述双工单元与所述第二射频开关连接;a radio frequency amplifying unit, a first radio frequency switch, a duplex unit and a second radio frequency switch, the first radio frequency switch is respectively connected to the radio frequency amplifying unit and the duplex unit, and the duplex unit is connected to the second radio frequency switch connection;
    所述射频放大单元、所述第一射频开关、所述双工单元和所述第二射频开关被封装为至少两个芯片,所述射频放大单元和所述双工单元被封装在不同的所述芯片中;The radio frequency amplification unit, the first radio frequency switch, the duplex unit and the second radio frequency switch are packaged as at least two chips, and the radio frequency amplification unit and the duplex unit are packaged in different places. in the chip;
    所述至少两个芯片沿垂直于印刷电路板的方向,叠加焊接于所述印刷电路板上。The at least two chips are superimposed and soldered on the printed circuit board along a direction perpendicular to the printed circuit board.
  2. 根据权利要求1所述的射频前端模组的封装结构,其特征在于,所述双工单元包括至少两条双工通路,所述双工通路用于对射频信号进行滤波;The packaging structure of the radio frequency front-end module according to claim 1, wherein the duplex unit comprises at least two duplex paths, and the duplex paths are used for filtering radio frequency signals;
    所述第一射频开关通过其中一条双工通路与所述双工单元连接,所述第二射频开关通过其中一条双工通路与所述双工单元连接。The first radio frequency switch is connected to the duplex unit through one of the duplex paths, and the second radio frequency switch is connected to the duplex unit through one of the duplex paths.
  3. 根据权利要求1所述的射频前端模组的封装结构,其特征在于,所述至少两个芯片中,与所述印刷电路板之间距离最大的芯片临近所述印刷电路板的表面设置有多个焊盘,其余芯片背离所述印刷电路板的表面和临近所述印刷电路板的表面均设置有多个焊盘。The package structure of the RF front-end module according to claim 1, wherein among the at least two chips, the chip with the largest distance from the printed circuit board is disposed adjacent to the surface of the printed circuit board. A plurality of pads are provided on the surfaces of the remaining chips away from the printed circuit board and on the surfaces adjacent to the printed circuit board.
  4. 根据权利要求1所述的射频前端模组的封装结构,其特征在于,所述射频放大单元、所述第一射频开关、所述双工单元和所述第二射频开关被封装为两个芯片,所述两个芯片包括第一芯片和第二芯片,所述第一芯片和所述第二芯片沿垂直于印刷电路板的方向,叠加焊接于所述印刷电路板上。The packaging structure of the radio frequency front-end module according to claim 1, wherein the radio frequency amplification unit, the first radio frequency switch, the duplex unit and the second radio frequency switch are packaged into two chips , the two chips include a first chip and a second chip, and the first chip and the second chip are superimposed and welded on the printed circuit board along a direction perpendicular to the printed circuit board.
  5. 根据权利要求4所述的射频前端模组的封装结构,其特征在于,所述第一芯片焊接于所述印刷电路板上,所述第二芯片焊接于所述第一芯片上;The package structure of the RF front-end module according to claim 4, wherein the first chip is welded on the printed circuit board, and the second chip is welded on the first chip;
    所述第一芯片背离所述印刷电路板表面的焊盘与所述第二芯片临近所述印刷电路板表面的焊盘的数量和分布位置相同。The pads of the first chip facing away from the surface of the printed circuit board have the same number and distribution positions as the pads of the second chip adjacent to the surface of the printed circuit board.
  6. 根据权利要求5所述的射频前端模组的封装结构,其特征在于,所述射频前端模组的输入端与所述第一芯片临近所述印刷电路板一侧的焊盘连接;The packaging structure of the RF front-end module according to claim 5, wherein the input end of the RF front-end module is connected to a pad on one side of the first chip adjacent to the printed circuit board;
    所述射频前端模组的输出端与所述第二芯片临近所述印刷电路板一侧的焊盘连接。The output end of the RF front-end module is connected to the pad on the side of the second chip adjacent to the printed circuit board.
  7. 根据权利要求4所述的射频前端模组的封装结构,其特征在于,所述射频放大单元和所述第一射频开关被封装为所述第一芯片,所述双工单元和所述第二射频开关被封装为所述第二芯片;或者,The packaging structure of the radio frequency front-end module according to claim 4, wherein the radio frequency amplification unit and the first radio frequency switch are packaged as the first chip, the duplex unit and the second radio frequency switch are packaged as the first chip. The radio frequency switch is packaged as the second chip; or,
    所述射频放大单元被封装为所述第一芯片,所述第一射频开关、所述双工单元和所述第二射频开关被封装为所述第二芯片。The radio frequency amplification unit is packaged as the first chip, and the first radio frequency switch, the duplex unit and the second radio frequency switch are packaged as the second chip.
  8. 根据权利要求7所述的射频前端模组的封装结构,其特征在于,所述第一芯片焊接到所述印刷电路板上,所述第二芯片焊接到所述第一芯片背离所述印刷电路板的表面。The package structure of the RF front-end module according to claim 7, wherein the first chip is welded to the printed circuit board, and the second chip is welded to the first chip away from the printed circuit surface of the board.
  9. 根据权利要求1所述的射频前端模组的封装结构,其特征在于,所述射频放大单元、所述第一射频开关、所述双工单元和所述第二射频开关被封装为三个芯片,所述三个芯片包括第一芯片、第二芯片和第三芯片,所述第一芯片、所述第二芯片和所述第三芯片沿垂直于印刷电路板的方向,叠加焊接于所述印刷电路板上。The packaging structure of the radio frequency front-end module according to claim 1, wherein the radio frequency amplification unit, the first radio frequency switch, the duplex unit and the second radio frequency switch are packaged into three chips , the three chips include a first chip, a second chip and a third chip, and the first chip, the second chip and the third chip are superimposed and welded to the printed circuit board.
  10. 根据权利要求9所述的射频前端模组的封装结构,其特征在于,所述射频放大单元和所述第一射频开关被封装为所述第一芯片,所述双工单元被封装为所述第二芯片,所述第二射频开关被封装为所述第三芯片;或者,The packaging structure of the RF front-end module according to claim 9, wherein the RF amplification unit and the first RF switch are packaged as the first chip, and the duplex unit is packaged as the The second chip, the second radio frequency switch is packaged as the third chip; or,
    所述射频放大单元被封装为所述第一芯片,所述第一射频开关和所述双工单元被封装为所述第二芯片,所述第二射频开关被封装为所述第三芯片;或者,The radio frequency amplification unit is packaged as the first chip, the first radio frequency switch and the duplex unit are packaged as the second chip, and the second radio frequency switch is packaged as the third chip; or,
    所述射频放大单元被封装为所述第一芯片,所述第一射频开关被 封装为所述第二芯片,所述双工单元被和所述第二射频开关被封装为所述第三芯片。The radio frequency amplification unit is packaged as the first chip, the first radio frequency switch is packaged as the second chip, the duplex unit and the second radio frequency switch are packaged as the third chip .
  11. 根据权利要求10所述的射频前端模组的封装结构,其特征在于,所述第一芯片焊接到所述印刷电路板上,所述第二芯片焊接到所述第一芯片背离所述印刷电路板的表面,所述第三芯片焊接到所述第二芯片背离所述印刷电路板的表面。The package structure of the RF front-end module according to claim 10, wherein the first chip is welded to the printed circuit board, and the second chip is welded to the first chip away from the printed circuit the surface of the board, the third die is soldered to the surface of the second die facing away from the printed circuit board.
  12. 根据权利要求9-11任一项所述的射频前端模组的封装结构,其特征在于,所述射频前端模组的输出端与所述第三芯片临近所述印刷电路板一侧的焊盘连接。The packaging structure of the radio frequency front-end module according to any one of claims 9-11, wherein the output end of the radio frequency front-end module and the pad on one side of the third chip are adjacent to the printed circuit board connect.
  13. 根据权利要求1所述的射频前端模组的封装结构,其特征在于,所述射频放大单元被封装为第一芯片,所述第一射频开关被封装为第二芯片,所述双工单元被封装为第三芯片,所述第二射频开关被封装为第四芯片;The packaging structure of the RF front-end module according to claim 1, wherein the RF amplifier unit is packaged as a first chip, the first RF switch is packaged as a second chip, and the duplex unit is packaged as a first chip. packaged as a third chip, and the second radio frequency switch is packaged as a fourth chip;
    所述第一芯片、所述第二芯片、所述第三芯片和所述第四芯片沿垂直于印刷电路板的方向,依次叠加焊接于所述印刷电路板上,所述第一芯片焊接到所述印刷电路板上。The first chip, the second chip, the third chip and the fourth chip are sequentially stacked and welded on the printed circuit board along the direction perpendicular to the printed circuit board, and the first chip is welded to the printed circuit board. on the printed circuit board.
  14. 根据权利要求1-13任一项所述的射频前端模组的封装结构,其特征在于,所述射频前端模组的封装结构还包括:散热焊盘;The packaging structure of the RF front-end module according to any one of claims 1-13, wherein the packaging structure of the RF front-end module further comprises: a heat dissipation pad;
    所述散热焊盘设置于所述第一芯片临近于所述印刷电路板的表面上。The heat dissipation pad is disposed on a surface of the first chip adjacent to the printed circuit board.
  15. 一种移动终端,其特征在于,包括如权利要求1-14任一项所述的射频前端模组的封装结构。A mobile terminal, characterized in that it comprises the packaging structure of the radio frequency front-end module according to any one of claims 1-14.
PCT/CN2021/084111 2021-01-05 2021-03-30 Package structure for radio frequency front-end module, and mobile terminal WO2022147913A1 (en)

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