CN112865835A - Packaging structure of radio frequency front-end module and mobile terminal - Google Patents
Packaging structure of radio frequency front-end module and mobile terminal Download PDFInfo
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- CN112865835A CN112865835A CN202110009055.9A CN202110009055A CN112865835A CN 112865835 A CN112865835 A CN 112865835A CN 202110009055 A CN202110009055 A CN 202110009055A CN 112865835 A CN112865835 A CN 112865835A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/401—Circuits for selecting or indicating operating mode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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Abstract
The present disclosure relates to a packaging structure of a radio frequency front-end module and a mobile terminal, wherein the packaging structure of the radio frequency front-end module comprises a radio frequency amplification unit, a first radio frequency switch, a duplex unit and a second radio frequency switch, the first radio frequency switch is respectively connected with the radio frequency amplification unit and the duplex unit, and the duplex unit is connected with the second radio frequency switch; the radio frequency amplification unit, the first radio frequency switch, the duplex unit and the second radio frequency switch are packaged into at least two chips, and the radio frequency amplification unit and the duplex unit are packaged into different chips; at least two chips are overlapped and welded on the printed circuit board along the direction vertical to the printed circuit board. Through the technical scheme disclosed by the invention, the design of the radio frequency amplification unit and the duplex unit can be independently carried out, the application flexibility of the radio frequency front-end module is improved, the design of the radio frequency front-end module is more compact, and the layout space of the printed circuit board is effectively saved.
Description
Technical Field
The present disclosure relates to the field of packaging technologies, and in particular, to a packaging structure of a radio frequency front end module and a mobile terminal.
Background
With the continuous development and evolution of 5G terminal devices, the 5G terminal devices need to be compatible with various countries and regions, and also consider various aspects such as design cost and performance. Therefore, in the selection of the rf front-end module, the miniaturization and the combination flexibility of the rf front-end module need to be considered comprehensively.
From the currently available rf front-end module, the rf amplifying unit and the duplex unit are integrated in the rf front-end module, that is, the rf amplifying unit and the duplex unit are integrated on a chip, and with the design difference and the requirement change of the rf front-end module, a manufacturer needs to continuously develop a new rf front-end module, that is, a new rf front-end module needs to be used for matching, which causes great development pressure for the rf front-end module manufacturer. On the other hand, in order to avoid the occurrence of many models of the rf front-end module, manufacturers develop large and complete products, which may increase chip area and waste material cost.
Disclosure of Invention
In order to solve the above technical problem or at least partially solve the above technical problem, the present disclosure provides a package structure of a radio frequency front end module and a mobile terminal, so that the design of a radio frequency amplification unit and a duplex unit can be performed independently, the flexibility of the application of the radio frequency front end module is improved, the design of the radio frequency front end module is more compact, and the layout space of a printed circuit board is effectively saved.
In a first aspect, an embodiment of the present disclosure provides a package structure of a radio frequency front end module, including:
the radio frequency switch is respectively connected with the radio frequency amplification unit and the duplex unit, and the duplex unit is connected with the second radio frequency switch;
the radio frequency amplification unit, the first radio frequency switch, the duplexing unit and the second radio frequency switch are packaged into at least two chips, and the radio frequency amplification unit and the duplexing unit are packaged into different chips;
the at least two chips are overlapped and welded on the printed circuit board along the direction perpendicular to the printed circuit board.
Optionally, among the at least two chips, a chip having the largest distance from the printed circuit board is provided with a plurality of pads on a surface close to the printed circuit board, and the rest of the chips are provided with a plurality of pads on a surface away from the printed circuit board and a surface close to the printed circuit board.
Optionally, the radio frequency amplifying unit, the first radio frequency switch, the duplexing unit, and the second radio frequency switch are packaged into two chips, where the two chips include a first chip and a second chip, and the first chip and the second chip are stacked and soldered on the printed circuit board along a direction perpendicular to the printed circuit board.
Optionally, the rf amplifying unit and the first rf switch are packaged as the first chip, and the duplexing unit and the second rf switch are packaged as the second chip; alternatively, the first and second electrodes may be,
the radio frequency amplifying unit is packaged as the first chip, and the first radio frequency switch, the duplexing unit and the second radio frequency switch are packaged as the second chip.
Optionally, the first chip is soldered to the printed circuit board, and the second chip is soldered to a surface of the first chip facing away from the printed circuit board.
Optionally, the radio frequency amplifying unit, the first radio frequency switch, the duplexing unit, and the second radio frequency switch are packaged into three chips, where the three chips include a first chip, a second chip, and a third chip, and the first chip, the second chip, and the third chip are stacked and soldered on the printed circuit board along a direction perpendicular to the printed circuit board.
Optionally, the rf amplifying unit and the first rf switch are packaged as the first chip, the duplexing unit is packaged as the second chip, and the second rf switch is packaged as the third chip; alternatively, the first and second electrodes may be,
the radio frequency amplifying unit is packaged as the first chip, the first radio frequency switch and the duplexing unit are packaged as the second chip, and the second radio frequency switch is packaged as the third chip; alternatively, the first and second electrodes may be,
the radio frequency amplifying unit is packaged as the first chip, the first radio frequency switch is packaged as the second chip, and the duplexing unit and the second radio frequency switch are packaged as the third chip.
Optionally, the first chip is soldered to the printed circuit board, the second chip is soldered to a surface of the first chip facing away from the printed circuit board, and the third chip is soldered to a surface of the second chip facing away from the printed circuit board.
Optionally, the rf amplifying unit is packaged as a first chip, the first rf switch is packaged as a second chip, the duplexing unit is packaged as a third chip, and the second rf switch is packaged as a fourth chip;
the first chip, the second chip, the third chip and the fourth chip are sequentially overlapped and welded on the printed circuit board along the direction perpendicular to the printed circuit board, and the first chip is welded on the printed circuit board.
In a second aspect, an embodiment of the present disclosure further provides a mobile terminal, including the package structure of the radio frequency front end module according to the first aspect.
Compared with the prior art, the technical scheme provided by the embodiment of the disclosure has the following advantages:
the packaging structure of the radio frequency front-end module provided by the embodiment of the disclosure comprises a radio frequency amplification unit, a first radio frequency switch, a duplex unit and a second radio frequency switch, wherein the first radio frequency switch is respectively connected with the radio frequency amplification unit and the duplex unit, the duplex unit is connected with the second radio frequency switch, the radio frequency amplification unit, the first radio frequency switch, the duplex unit and the second radio frequency switch are packaged into at least two chips, and the radio frequency amplification unit and the duplex unit are packaged into different chips. Therefore, the problem that the design and development of a new radio frequency front-end module need to be carried out continuously along with the difference of the design of the radio frequency front-end module and the change of the requirement caused by the fact that the radio frequency amplification unit and the duplex unit are packaged in a chip, and the material cost and other resources are wasted is solved, the design of the radio frequency amplification unit and the duplex unit can be carried out independently, the radio frequency amplification unit can be kept relatively stable and independent, in the design of different radio frequency front-end modules, the same radio frequency amplification unit can be kept, the radio frequency amplification unit can be applied to different countries and regions only by adjusting the duplex unit, the frequency band collocation of the radio frequency front-end module is more flexible, the design redundancy of the radio frequency front-end module is reduced, the application flexibility of the radio frequency front-end module is improved, and the development pressure of a manufacturer is relieved. In addition, at least two chips are arranged and welded on the printed circuit board in a superposition mode along the direction perpendicular to the printed circuit board, so that the design of the radio frequency front-end module is more compact, the area of the radio frequency front-end module occupying the printed circuit board is reduced, and the layout space of the printed circuit board is effectively saved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure.
In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present disclosure, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.
Fig. 1 is a schematic diagram of a connection structure of a radio frequency front end module according to an embodiment of the present disclosure;
fig. 2 is a schematic diagram of a radio frequency front end module package structure according to an embodiment of the disclosure;
fig. 3 is a schematic diagram illustrating a package splitting manner of a radio frequency front end module according to an embodiment of the present disclosure;
fig. 4 is a schematic diagram illustrating a package splitting manner of a radio frequency front end module according to an embodiment of the present disclosure;
fig. 5 is a schematic diagram of an on-chip pad arrangement provided in an embodiment of the present disclosure;
fig. 6 is a schematic diagram of another rf front end module package structure according to an embodiment of the disclosure;
fig. 7 is a schematic diagram illustrating another package splitting manner of a radio frequency front end module according to an embodiment of the present disclosure;
fig. 8 is a schematic diagram illustrating another package splitting manner of a radio frequency front end module according to an embodiment of the present disclosure;
fig. 9 is a schematic diagram illustrating another package splitting manner of a radio frequency front end module according to an embodiment of the present disclosure;
fig. 10 is a schematic diagram of another rf front end module package structure according to an embodiment of the disclosure;
fig. 11 is a schematic diagram illustrating another package splitting manner of a radio frequency front end module according to an embodiment of the present disclosure.
Detailed Description
In order that the above objects, features and advantages of the present disclosure may be more clearly understood, aspects of the present disclosure will be further described below. It should be noted that the embodiments and features of the embodiments of the present disclosure may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced in other ways than those described herein; it is to be understood that the embodiments disclosed in the specification are only a few embodiments of the present disclosure, and not all embodiments.
Fig. 1 is a schematic diagram of a connection structure of a radio frequency front end module according to an embodiment of the present disclosure. As shown in fig. 1, the packaging structure of the rf front-end module includes an rf amplifying unit 1, a first rf switch 2, a duplex unit 3, and a second rf switch 4, where the first rf switch 2 is connected to the rf amplifying unit 1 and the duplex unit 3, respectively, and the duplex unit 3 is connected to the second rf switch 4. Specifically, a small radio frequency signal is input to an input end IN of the radio frequency front-end module, the radio frequency amplification unit 1 is configured to amplify the radio frequency signal input to the input end IN of the radio frequency front-end module, the duplex unit 3 includes a plurality of duplex paths, the duplex paths are configured to filter the amplified radio frequency signal, the first radio frequency switch 2 and the second radio frequency switch 4 are configured to select a path to be accessed to the radio frequency front-end module, and the second radio frequency switch 4 outputs the filtered radio frequency signal through an output end OUT. Fig. 1 exemplarily shows that the duplexing unit 3 includes two duplexing modules 31 and one filtering module 32, a radio frequency transmission path is connected to the radio frequency amplifying unit 1 in the duplexing unit 3, a radio frequency reception path is not connected to the radio frequency amplifying unit 1, the duplexing module 31 can perform filtering with different bandwidths on the radio frequency transmission path and the radio frequency reception path, and the filtering module 32 can perform filtering with a set bandwidth only on the radio frequency transmission path.
Fig. 2 is a schematic diagram of a radio frequency front end module package structure according to an embodiment of the disclosure. Referring to fig. 1 and 2, the rf amplifying unit 1, the first rf switch 2, the duplexer unit 3, and the second rf switch 4 are packaged as at least two chips, fig. 2 exemplarily sets that the rf amplifying unit 1, the first rf switch 2, the duplexer unit 3, and the second rf switch 4 are packaged as a chip 100 and a chip 200, and the rf amplifying unit 1 and the duplexer unit 3 are packaged in different chips.
From the currently available rf front-end module, the rf amplifying unit and the duplex unit are integrated in the rf front-end module, that is, the rf amplifying unit and the duplex unit are integrated on a chip, and with the design difference and the requirement change of the rf front-end module, a manufacturer needs to continuously develop a new rf front-end module, that is, a new rf front-end module needs to be used for matching, which causes great development pressure for the rf front-end module manufacturer. On the other hand, in order to avoid the occurrence of many models of the rf front-end module, manufacturers develop large and complete products, which may increase chip area and waste material cost.
Therefore, the radio frequency amplification unit 1 and the duplex unit 3 are packaged in different chips, and when the chips are used in a matched mode, the chip packaged with the radio frequency amplification unit 1 and the chip packaged with the duplex unit 3 can be used in a matched mode. Therefore, the problem that the design and development of a new radio frequency front end module need to be carried out ceaselessly along with the different design of the radio frequency front end module and the change of the requirement caused by the fact that the radio frequency amplification unit 1 and the duplex unit 3 are packaged in one chip, and the waste of resources such as material cost is caused is solved, the design of the radio frequency amplification unit 1 and the duplex unit 3 can be carried out independently, the radio frequency amplification unit 1 can be kept relatively stable and independent, the same radio frequency amplification unit 1 can be kept in the design of different radio frequency front end modules, the radio frequency amplification unit can be applied to different countries and regions only by adjusting the duplex unit 3, the frequency band collocation of the radio frequency front end module is more flexible, the design redundancy of the radio frequency front end module is reduced, the application flexibility of the radio frequency front end module is improved, and the development pressure of manufacturers is relieved.
Referring to fig. 1 and 2, at least two chips, for example, a chip 100 and a chip 200, are disposed and soldered on the printed circuit board 5 in a direction perpendicular to the printed circuit board 5. Specifically, the radio frequency front end module is divided into at least two modules and is designed into a packaging form capable of being welded in a superposed mode, so that the design of the radio frequency front end module is more compact, the area of the printed circuit board 5 occupied by the radio frequency front end module is reduced, and the layout space of the printed circuit board 5 is effectively saved.
Alternatively, referring to fig. 1 and 2, among at least two chips, the chip with the largest distance from the pcb 5 is disposed, for example, the chip 200 is disposed with a plurality of pads on the surface adjacent to the pcb 5, and the rest of the chips, for example, the surface of the chip 100 away from the pcb 5 and the surface adjacent to the pcb 5, are disposed with a plurality of pads, that is, in the overlay bonding package structure, the chip located at the top, for example, the bottom of the chip 200 is disposed with a plurality of pads for bonding, the rest of the chips, for example, the top and the bottom of the chip 100 are disposed with a plurality of pads for bonding, the chip located at the bottom, for example, the chip 100 is bonded or attached to the pcb 5 through the pads at the bottom, and the rest of the chips, for example, the chip 200 is bonded between the two chips through the pads at the bottom and the pads reserved on the top, and then a superposition welded radio frequency front end module packaging structure is formed. Therefore, the design of the radio frequency front-end module is more compact, the area of the radio frequency front-end module occupying the printed circuit board 5 is reduced, and the layout space of the printed circuit board 5 is effectively saved.
Alternatively, in combination with fig. 1 and 2, it may be arranged that the rf amplifying unit 1, the first rf switch 2, the duplexer unit 3, and the second rf switch 4 are packaged into two chips, where the two chips include a first chip 6 and a second chip 7, and the first chip 6 and the second chip 7 are stacked and soldered on the printed circuit board 5 along a direction perpendicular to the printed circuit board 5.
Fig. 3 is a schematic diagram illustrating a package splitting manner of a radio frequency front end module according to an embodiment of the present disclosure. With reference to fig. 1 to 3, when the rf amplifying unit 1, the first rf switch 2, the duplexer unit 3 and the second rf switch 4 are packaged into two chips, it may be configured that the rf amplifying unit 1 and the first rf switch 2 are packaged into the first chip 6, and the duplexer unit 3 and the second rf switch 4 are packaged into the second chip 7. Specifically, the radio frequency amplification unit 1 and the first radio frequency switch 2 are packaged into the first chip 6, the duplex unit 3 and the second radio frequency switch 4 are packaged into the second chip 7, the radio frequency amplification unit 1 and the duplex unit 3 are packaged into different chips, frequency band collocation of the radio frequency front end module is more flexible, design redundancy of the radio frequency front end module is reduced, flexibility of application of the radio frequency front end module is improved, and development pressure of manufacturers is relieved.
Fig. 4 is a schematic diagram illustrating a package splitting manner of a radio frequency front end module according to an embodiment of the present disclosure. With reference to fig. 1, 2 and 4, when the rf amplifying unit 1, the first rf switch 2, the duplexer unit 3 and the second rf switch 4 are packaged as two chips, it may also be arranged that the rf amplifying unit 1 is packaged as a first chip 6, and the first rf switch 2, the duplexer unit 3 and the second rf switch 4 are packaged as a second chip 7. Similarly, the radio frequency amplification unit 1 is packaged into the first chip 6, and the first radio frequency switch 2, the duplex unit 3 and the second radio frequency switch 4 are packaged into the second chip 7, so that the radio frequency amplification unit 1 and the duplex unit 3 are packaged into different chips, the frequency band collocation of the radio frequency front-end module is more flexible, the design redundancy of the radio frequency front-end module is reduced, the flexibility of the application of the radio frequency front-end module is improved, and the development pressure of manufacturers is relieved.
Alternatively, in combination with fig. 1 to 4, a first chip 6 may be soldered to the printed circuit board 5, and a second chip 7 may be soldered to a surface of the first chip 6 away from the printed circuit board 5, and when the rf amplifying unit 1, the first rf switch 2, the duplexer unit 3 and the second rf switch 4 are packaged as two chips, the rf amplifying unit 1 and the first rf switch 2 may be packaged as the first chip 6, the duplexer unit 3 and the second rf switch 4 may be packaged as the second chip 7, or the rf amplifying unit 1 may be packaged as the first chip 6, the first rf switch 2, the duplexer unit 3 and the second rf switch 4 may be packaged as the second chip 7, so that soldering the first chip 6 packaged with the rf amplifying unit 1 to the printed circuit board 5 is achieved, the rf amplifying unit 1 may dissipate heat through a metal layer on the printed circuit board 5, the radiating effect of the radio frequency amplification unit 1 is optimized.
In addition, the first chip 6 is arranged to be welded on the printed circuit board 5, the second chip 7 is welded on the surface, deviating from the printed circuit board 5, of the first chip 6, and the arrangement of the upper position and the lower position of the package is carried out according to the connection sequence of the radio frequency amplification unit 1, the first radio frequency switch 2, the duplex unit 3 and the second radio frequency switch 4 in the radio frequency front-end module, so that the simplification of the bottom of the chip on the top and the pad design of the tops and bottoms of other chips is facilitated.
For example, in the case that the rf amplifying unit 1 and the first rf switch 2 are packaged as the first chip 6, and the diplex unit 3 and the second rf switch 4 are packaged as the second chip 7, the electrical connection relationship between the first rf switch 2 and the diplex unit 3 only needs to be realized through the bonding pad at the bottom of the upper chip and the bonding pad at the top of the lower chip in the adjacent chips. For example, IN the case that the rf amplifying unit 1 is packaged as the first chip 6, and the first rf switch 2, the duplexer unit 3, and the second rf switch 4 are packaged as the second chip 7, it is only necessary to implement the electrical connection relationship between the rf amplifying unit 1 and the first rf switch 2 through the pad at the bottom of the upper chip and the pad at the top of the lower chip IN the adjacent chips, and IN the above case, the input terminal IN of the rf front-end module may be directly connected to the pcb 5 through the pad at the side of the lowest chip adjacent to the pcb 5.
Fig. 5 is a schematic diagram of an arrangement of pads on a chip according to an embodiment of the disclosure. With reference to fig. 1 to 5, the left side of fig. 5 shows that the pads of the first chip 6 on the side facing away from the printed circuit board 5 or the pads of the second chip 7 on the side adjacent to the printed circuit board 5 may be arranged, and the right side of fig. 5 shows that the pads of the first chip 6 on the side adjacent to the printed circuit board 5 may be arranged. Specifically, the first chip 6 is soldered on the printed circuit board 5 through a pad on a side of the first chip 6 adjacent to the printed circuit board 5, the number and distribution positions of the pads on a side of the first chip 6 away from the printed circuit board 5 are the same as those of the pads on a side of the second chip 7 adjacent to the printed circuit board 5, and the second chip 7 is soldered on the first chip 6 through a pad on a side of the second chip 7 adjacent to the printed circuit board 5 and a pad on a side of the first chip 6 away from the printed circuit board 5.
IN addition, IN fig. 1, both the input terminal IN and the output terminal OUT of the rf front-end module need to be connected to the printed circuit board 5, the input terminal IN may be connected to the printed circuit board 5 through the soldering relationship between the first chip 6 and the printed circuit board 5, the output terminal OUT is led OUT from a pad on a side of the second chip 7 adjacent to the printed circuit board 5, and may be connected to the printed circuit board 5 through a pad penetrating through the first chip 6.
Fig. 6 is a schematic diagram of another rf front-end module package structure according to an embodiment of the disclosure. With reference to fig. 1 and 6, it may be configured that the rf amplifying unit 1, the first rf switch 2, the duplexer unit 3, and the second rf switch 4 are packaged into three chips, where the three chips include a first chip 6, a second chip 7, and a third chip 8, and the first chip 6, the second chip 7, and the third chip 8 are stacked and soldered on the printed circuit board 5 along a direction perpendicular to the printed circuit board 5.
Fig. 7 is a schematic diagram illustrating another package splitting manner of a radio frequency front end module according to an embodiment of the present disclosure. With reference to fig. 1, 6 and 7, when the rf amplifying unit 1, the first rf switch 2, the duplexer unit 3 and the second rf switch 4 are packaged into three chips, it may be configured that the rf amplifying unit 1 and the first rf switch 2 are packaged into the first chip 6, the duplexer unit 3 is packaged into the second chip 7, and the second rf switch 4 is packaged into the third chip 8. Specifically, the radio frequency amplification unit 1 and the first radio frequency switch 2 are packaged into the first chip 6, the duplex unit 3 is packaged into the second chip 7, and the second radio frequency switch 4 is packaged into the third chip 8, so that the radio frequency amplification unit 1 and the duplex unit 3 are packaged into different chips, frequency band collocation of the radio frequency front end module is more flexible, design redundancy of the radio frequency front end module is reduced, flexibility of application of the radio frequency front end module is improved, and development pressure of manufacturers is relieved.
Fig. 8 is a schematic diagram illustrating another package splitting manner of a radio frequency front end module according to an embodiment of the present disclosure. With reference to fig. 1, 6 and 8, when the rf amplifying unit 1, the first rf switch 2, the duplexer unit 3 and the second rf switch 4 are packaged into three chips, it may be configured that the rf amplifying unit 1 is packaged into the first chip 6, the first rf switch 2 and the duplexer unit 3 are packaged into the second chip 7, and the second rf switch 4 is packaged into the third chip 8. Specifically, the radio frequency amplification unit 1 is packaged into the first chip 6, the first radio frequency switch 2 and the duplex unit 3 are packaged into the second chip 7, and the second radio frequency switch 4 is packaged into the third chip 8, so that the radio frequency amplification unit 1 and the duplex unit 3 are packaged into different chips, frequency band collocation of the radio frequency front end module is more flexible, design redundancy of the radio frequency front end module is reduced, flexibility of application of the radio frequency front end module is improved, and development pressure of manufacturers is relieved.
Fig. 9 is a schematic diagram illustrating another package splitting manner of a radio frequency front end module according to an embodiment of the present disclosure. With reference to fig. 1, 6 and 9, when the rf amplifying unit 1, the first rf switch 2, the duplexer unit 3 and the second rf switch 4 are packaged into three chips, it may be configured that the rf amplifying unit 1 is packaged into the first chip 6, the first rf switch 2 is packaged into the second chip 7, and the duplexer unit 3 is packaged into the third chip 8 with the second rf switch 4. Specifically, the radio frequency amplification unit 1 is packaged into the first chip 6, the first radio frequency switch 2 is packaged into the second chip 7, the duplex unit 3 is packaged into the third chip 8 together with the second radio frequency switch 4, so that the radio frequency amplification unit 1 and the duplex unit 3 are packaged into different chips, frequency band collocation of the radio frequency front end module is more flexible, design redundancy of the radio frequency front end module is reduced, flexibility of application of the radio frequency front end module is improved, and development pressure of manufacturers is relieved.
Alternatively, in combination with fig. 1 and fig. 6 to 9, a first chip 6 may be arranged to be soldered to the printed circuit board 5, a second chip 7 may be soldered to a surface of the first chip 6 facing away from the printed circuit board 5, and a third chip 8 may be soldered to a surface of the second chip 7 facing away from the printed circuit board 5, since the rf amplifying unit 1, the first rf switch 2, the duplexer unit 3, and the second rf switch 4 are packaged as three chips, the rf amplifying unit 1 and the first rf switch 2 may be arranged to be packaged as the first chip 6, the duplexer unit 3 may be packaged as the second chip 7, the second rf switch 4 may be arranged to be packaged as the third chip 8, or the rf amplifying unit 1 may be arranged to be packaged as the first chip 6, the first rf switch 2 and the duplexer unit 3 may be packaged as the second chip 7, the second rf switch 4 may be packaged as the third chip 8, or the rf amplifying unit 1 may be arranged to be packaged as the first chip 6, the first radio frequency switch 2 is packaged into the second chip 7, the duplex unit 3 and the second radio frequency switch 4 are packaged into the third chip 8, the first chip 6 packaged with the radio frequency amplification unit 1 is welded on the printed circuit board 5, the radio frequency amplification unit 1 can dissipate heat through a metal layer on the printed circuit board 5, and the heat dissipation effect of the radio frequency amplification unit 1 is optimized.
The first chip 6 is arranged to be welded on the printed circuit board 5, the second chip 7 is arranged to be welded on the surface of the first chip 6 departing from the printed circuit board 5, when the third chip 8 is arranged to be welded on the surface of the second chip 7 departing from the printed circuit board 5, the left side diagram in fig. 5 shows that the first chip 6 can be arranged on the pad of one side of the printed circuit board 5, the second chip 7 is arranged on the pad of one side of the printed circuit board 5 or the third chip 8 is arranged on the pad of one side of the printed circuit board 5, and the right side diagram in fig. 5 shows that the first chip 6 is arranged on the pad of one side of the printed circuit board 5.
In addition, the first chip 6 is welded on the printed circuit board 5, the second chip 7 is welded on the surface of the first chip 6 departing from the printed circuit board 5, the third chip 8 is welded on the surface of the second chip 7 departing from the printed circuit board 5, the upper position and the lower position of the package are arranged according to the connection sequence of the radio frequency amplification unit 1, the first radio frequency switch 2, the duplex unit 3 and the second radio frequency switch 4 in the radio frequency front-end module, and the simplification of the bottom of the chip on the top and the bonding pad design of the tops and the bottoms of the other chips is facilitated.
For example, in the case that the rf amplifying unit 1 and the first rf switch 2 are packaged as the first chip 6, the duplexing unit 3 is packaged as the second chip 7, and the second rf switch 4 is packaged as the third chip 8, it is only necessary to realize the electrical connection relationship between the first rf switch 2 and the duplexing unit 3 and the electrical connection relationship between the duplexing unit 3 and the second rf switch 4 through the bonding pad at the bottom of the upper chip and the bonding pad at the top of the lower chip in the adjacent chips. For example, in the case that the rf amplifying unit 1 is packaged as the first chip 6, the first rf switch 2 and the duplexer unit 3 are packaged as the second chip 7, and the second rf switch 4 is packaged as the third chip 8, the electrical connection relationship between the rf amplifying unit 1 and the first rf switch 2, and between the duplexer unit 3 and the second rf switch 4 only need to be realized through the bonding pad at the bottom of the upper chip and the bonding pad at the top of the lower chip in the adjacent chips. For example, IN the case that the rf amplifying unit 1 is packaged as the first chip 6, the first rf switch 2 is packaged as the second chip 7, and the duplexer unit 3 and the second rf switch 4 are packaged as the third chip 8, the electrical connection relationship between the rf amplifying unit 1 and the first rf switch 2, and between the first rf switch 2 and the duplexer unit 3 only needs to be realized through a pad at the bottom of the upper chip and a pad at the top of the lower chip IN the adjacent chips, and IN the above case, the input terminal IN of the rf front-end module can be directly connected to the pcb 5 through a pad at one side of the lowest chip adjacent to the pcb 5.
IN addition, IN fig. 1, both the input terminal IN and the output terminal OUT of the rf front-end module need to be connected to the printed circuit board 5, the input terminal IN may be connected to the printed circuit board 5 through the soldering relationship between the first chip 6 and the printed circuit board 5, the output terminal OUT is led OUT from a pad on a side of the third chip 8 adjacent to the printed circuit board 5, and the input terminal IN may be connected to the printed circuit board 5 through a pad penetrating the second chip 7 and a pad penetrating the first chip 6.
Fig. 10 is a schematic diagram of another rf front-end module package structure according to an embodiment of the disclosure. With reference to fig. 1 and 10, it may be arranged that the rf amplifying unit 1 is packaged as a first chip 6, the first rf switch 2 is packaged as a second chip 7, the diplexing unit 3 is packaged as a third chip 8, and the second rf switch 4 is packaged as a fourth chip 9; the first chip 6, the second chip 7, the third chip 8 and the fourth chip 9 are sequentially and superposedly welded on the printed circuit board 5 along a direction perpendicular to the printed circuit board 5, and the first chip 6 is welded on the printed circuit board 5.
Fig. 11 is a schematic diagram illustrating another package splitting manner of a radio frequency front end module according to an embodiment of the present disclosure. With reference to fig. 1, 10 and 11, the rf amplifying unit 1 is packaged as a first chip 6, the first rf switch 2 is packaged as a second chip 7, the duplexer unit 3 is packaged as a third chip 8, and the second rf switch 4 is packaged as a fourth chip 9. Specifically, it is set that the radio frequency amplification unit 1 is packaged as a first chip 6, the first radio frequency switch 2 is packaged as a second chip 7, the duplex unit 3 is packaged as a third chip 8, and the second radio frequency switch 4 is packaged as a fourth chip 9, so that the radio frequency amplification unit 1 and the duplex unit 3 are packaged in different chips, so that the frequency band collocation of the radio frequency front end module is more flexible, the design redundancy of the radio frequency front end module is reduced, the flexibility of the application of the radio frequency front end module is improved, and the development pressure of manufacturers is relieved.
In addition, the radio frequency amplification unit 1 is packaged into the first chip 6, the first chip 6 is welded on the printed circuit board 5, the first chip 6 packaged with the radio frequency amplification unit 1 is welded on the printed circuit board 5, the radio frequency amplification unit 1 can dissipate heat through a metal layer on the printed circuit board 5, and the heat dissipation effect of the radio frequency amplification unit 1 is optimized.
It is arranged that the radio frequency amplifying unit 1 is packaged as a first chip 6, the first radio frequency switch 2 is packaged as a second chip 7, the duplexing unit 3 is packaged as a third chip 8, and when the second radio frequency switch 4 is packaged as a fourth chip 9, what is shown on the left side in fig. 5 may be that the first chip 6 deviates from the pad setting on the side of the printed circuit board 5, the second chip 7 is close to and deviates from the pad setting on the side of the printed circuit board 5, the third chip 8 is close to and deviates from the pad setting on the side of the printed circuit board 5 or the fourth chip 9 is close to the pad setting on the side of the printed circuit board 5, and what is shown on the right side in fig. 5 is that the first chip 6 is close to the pad setting on the side of the printed circuit.
In addition, the first chip 6, the second chip 7, the third chip 8 and the fourth chip 9 are sequentially arranged and welded on the printed circuit board 5 in an overlapping manner along a direction perpendicular to the printed circuit board 5, that is, the first chip 6 is arranged to be welded on the printed circuit board 5, the second chip 7 is welded on the surface of the first chip 6 departing from the printed circuit board 5, the third chip 8 is welded on the surface of the second chip 7 departing from the printed circuit board 5, and the fourth chip 9 is welded on the surface of the third chip 8 departing from the printed circuit board 5, the upper and lower positions of the package are arranged according to the connection sequence of the radio frequency amplification unit 1, the first radio frequency switch 2, the duplex unit 3 and the second radio frequency switch 4 in the radio frequency front-end module, which is beneficial to simplifying the pad design of the bottom of the uppermost chip and the tops and bottoms of the rest chips, and only the pads of the bottom of the upper chip and the top of the lower chip in the adjacent chips are needed to realize that the radio frequency amplification, The first rf switch 2 and the duplex unit 3, and the duplex unit 3 and the second rf switch 4 may be electrically connected.
IN addition, IN fig. 1, both the input terminal IN and the output terminal OUT of the rf front-end module need to be connected to the printed circuit board 5, the input terminal IN may be connected to the printed circuit board 5 through the soldering relationship between the first chip 6 and the printed circuit board 5, the output terminal OUT is led OUT from a pad on a side of the fourth chip 9 adjacent to the printed circuit board 5, and may be connected to the printed circuit board 5 through a pad penetrating through the third chip 8, a pad penetrating through the second chip 7, and a pad penetrating through the first chip 6.
Alternatively, in conjunction with fig. 1 to 11, a side of the chip soldered to the printed circuit board 5 adjacent to the printed circuit board 5 may be provided with a ground heat-dissipating pad 11. For example, the first chip 6 may be provided with a ground heat dissipation pad 11 on a side thereof adjacent to the printed circuit board 5, and the ground heat dissipation pad 11 has a larger area, which is beneficial to optimize the heat dissipation effect of the first chip 6, for example, the heat dissipation effect of the radio frequency amplification unit 1. The remaining pads 12 in fig. 5 may be signal transmission pads, and have a smaller area compared to the ground heat dissipation pad 11.
It should be noted that fig. 5 only exemplarily shows the number and arrangement of the pads on the chip surface, and the number and arrangement of the pads on the chip surface are not specifically limited in the embodiment of the present disclosure, so as to ensure that the corresponding soldering between the chip and the printed circuit board 5 and between the chip and the chip is achieved.
In summary, the embodiments of the present disclosure provide that the rf amplifying unit and the duplexer unit are packaged in different chips, so as to solve the problem of resource waste such as material cost caused by the fact that the rf amplifying unit and the duplexer unit are packaged in one chip and the design and development of a new rf front end module need to be continuously performed along with the design change and the requirement change of the rf front end module, so that the design of the rf amplifying unit and the duplexer unit can be independently performed, the rf amplifying unit can be kept relatively stable and independent, in the design of different rf front end modules, the same rf amplifying unit can be kept, and the same rf amplifying unit can be applied to different countries and regions only by adjusting the duplexer unit, so that the frequency band collocation of the rf front end module is more flexible, the design redundancy of the rf front end module is reduced, and the flexibility of the application of the rf front end module is improved, the development pressure of manufacturers is relieved. In addition, at least two chips are arranged and welded on the printed circuit board in a superposition mode along the direction perpendicular to the printed circuit board, so that the design of the radio frequency front-end module is more compact, the area of the radio frequency front-end module occupying the printed circuit board is reduced, and the layout space of the printed circuit board is effectively saved.
The embodiment of the present disclosure further provides a mobile terminal, where the mobile terminal includes the encapsulation structure of the radio frequency front end module according to the embodiment, and therefore the mobile terminal provided in the embodiment of the present disclosure also has the above beneficial effects, which is not described herein again. Illustratively, the mobile terminal may be an electronic device such as a mobile phone or a tablet computer.
It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The foregoing are merely exemplary embodiments of the present disclosure, which enable those skilled in the art to understand or practice the present disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A packaging structure of a radio frequency front end module is characterized by comprising:
the radio frequency switch is respectively connected with the radio frequency amplification unit and the duplex unit, and the duplex unit is connected with the second radio frequency switch;
the radio frequency amplification unit, the first radio frequency switch, the duplexing unit and the second radio frequency switch are packaged into at least two chips, and the radio frequency amplification unit and the duplexing unit are packaged into different chips;
the at least two chips are overlapped and welded on the printed circuit board along the direction perpendicular to the printed circuit board.
2. The package structure of the rf front-end module according to claim 1, wherein a plurality of pads are disposed on a surface of the at least two chips, which is close to the pcb and has a largest distance from the pcb, and a plurality of pads are disposed on surfaces of the remaining chips, which are away from the pcb, and surfaces of the remaining chips, which are close to the pcb.
3. The package structure of the rf front-end module as claimed in claim 1, wherein the rf amplifying unit, the first rf switch, the duplexer unit and the second rf switch are packaged as two chips, the two chips include a first chip and a second chip, and the first chip and the second chip are stacked and soldered on the pcb along a direction perpendicular to the pcb.
4. The package structure of the rf front-end module as claimed in claim 3, wherein the rf amplifying unit and the first rf switch are packaged as the first chip, and the diplex unit and the second rf switch are packaged as the second chip; alternatively, the first and second electrodes may be,
the radio frequency amplifying unit is packaged as the first chip, and the first radio frequency switch, the duplexing unit and the second radio frequency switch are packaged as the second chip.
5. The package structure of claim 4, wherein the first chip is bonded to the printed circuit board, and the second chip is bonded to a surface of the first chip facing away from the printed circuit board.
6. The package structure of the rf front-end module of claim 1, wherein the rf amplifying unit, the first rf switch, the duplexer unit and the second rf switch are packaged into three chips, the three chips include a first chip, a second chip and a third chip, and the first chip, the second chip and the third chip are stacked and soldered on the pcb along a direction perpendicular to the pcb.
7. The package structure of the rf front-end module as claimed in claim 6, wherein the rf amplifying unit and the first rf switch are packaged as the first chip, the duplexer unit is packaged as the second chip, and the second rf switch is packaged as the third chip; alternatively, the first and second electrodes may be,
the radio frequency amplifying unit is packaged as the first chip, the first radio frequency switch and the duplexing unit are packaged as the second chip, and the second radio frequency switch is packaged as the third chip; alternatively, the first and second electrodes may be,
the radio frequency amplifying unit is packaged as the first chip, the first radio frequency switch is packaged as the second chip, and the duplexing unit and the second radio frequency switch are packaged as the third chip.
8. The package structure of claim 7, wherein the first chip is bonded to the printed circuit board, the second chip is bonded to a surface of the first chip facing away from the printed circuit board, and the third chip is bonded to a surface of the second chip facing away from the printed circuit board.
9. The package structure of the rf front-end module as claimed in claim 1, wherein the rf amplifying unit is packaged as a first chip, the first rf switch is packaged as a second chip, the duplexer unit is packaged as a third chip, and the second rf switch is packaged as a fourth chip;
the first chip, the second chip, the third chip and the fourth chip are sequentially overlapped and welded on the printed circuit board along the direction perpendicular to the printed circuit board, and the first chip is welded on the printed circuit board.
10. A mobile terminal, characterized in that it comprises a packaging structure of a radio frequency front end module according to any of claims 1-9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110009055.9A CN112865835A (en) | 2021-01-05 | 2021-01-05 | Packaging structure of radio frequency front-end module and mobile terminal |
| PCT/CN2021/084111 WO2022147913A1 (en) | 2021-01-05 | 2021-03-30 | Package structure for radio frequency front-end module, and mobile terminal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110009055.9A CN112865835A (en) | 2021-01-05 | 2021-01-05 | Packaging structure of radio frequency front-end module and mobile terminal |
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| Publication Number | Publication Date |
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| CN112865835A true CN112865835A (en) | 2021-05-28 |
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| CN202110009055.9A Pending CN112865835A (en) | 2021-01-05 | 2021-01-05 | Packaging structure of radio frequency front-end module and mobile terminal |
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| WO (1) | WO2022147913A1 (en) |
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| WO2022147913A1 (en) | 2022-07-14 |
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