WO2022143982A1 - Multiplexer, method for improving isolation of multiplexer, and communication device - Google Patents

Multiplexer, method for improving isolation of multiplexer, and communication device Download PDF

Info

Publication number
WO2022143982A1
WO2022143982A1 PCT/CN2021/143682 CN2021143682W WO2022143982A1 WO 2022143982 A1 WO2022143982 A1 WO 2022143982A1 CN 2021143682 W CN2021143682 W CN 2021143682W WO 2022143982 A1 WO2022143982 A1 WO 2022143982A1
Authority
WO
WIPO (PCT)
Prior art keywords
ground
multiplexer
inductance
filters
capacitive structure
Prior art date
Application number
PCT/CN2021/143682
Other languages
French (fr)
Chinese (zh)
Inventor
蔡华林
庞慰
Original Assignee
诺思(天津)微系统有限责任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 诺思(天津)微系统有限责任公司 filed Critical 诺思(天津)微系统有限责任公司
Publication of WO2022143982A1 publication Critical patent/WO2022143982A1/en

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/54Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56Monolithic crystal filters

Definitions

  • the present invention relates to the technical field of filters, in particular to a multiplexer, a method for improving the isolation of the multiplexer, and a communication device.
  • miniaturization is achieved by reducing the size of the chip and package substrate on the one hand, and better performance is achieved by reducing loss sources and better resonator fit design on the other hand.
  • the existing filter structure there are many passive components used for matching, and at the same time, to improve specific performance such as roll-off insertion loss, etc., additional structures such as more inductance, capacitance, and coupling need to be introduced.
  • FIG. 1 is a schematic diagram of a structure of an acoustic wave filter according to the prior art.
  • this filter 10 there are inductors 121, 122 and a plurality of resonators (usually called series resonators) 101 to 104 between the input terminal 131 and the output terminal 132, and the connection point of each series resonator is connected to the ground terminal.
  • Resonators 111 to 113 (usually referred to as parallel resonators) and inductors 123 to 125 are respectively provided on the multiple branches (usually referred to as parallel branches) of the . Because the parallel resonator is grounded through the inductances 123 to 125, the inductances 123 to 125 are also called ground inductances.
  • the above-mentioned resonators are piezoelectric acoustic wave resonators, and piezoelectric acoustic wave resonators refer to resonators that utilize piezoelectric effect to generate resonance characteristics. Commonly used ones include but are not limited to: bulk acoustic wave piezoelectric resonators (such as FABR, SMR, etc.), Surface acoustic wave piezoelectric resonators.
  • FIG. 2A is a schematic diagram of a structure of a multiplexer according to the prior art.
  • the multiplexer has a common terminal Common and n output terminals F1 to Fn, and contains n filters.
  • Each filter has an inductance to ground.
  • the figure shows two inductances G11 and G12 to ground of filter 1 and two inductances to ground Gn1 and Gn2 of filter n.
  • One end of these inductances to ground is connected to The resonator in the filter (not shown in the figure, please refer to Figure 1), the other end is connected to the ground terminal GND.
  • FIG. 2B is a schematic diagram of mutual inductance between ground inductances of different filters in a multiplexer according to the prior art.
  • FIG. 2B takes the multiplexer shown in FIG. 2A as an example.
  • the ground inductances G11 and Gn1 in the multiplexer 20 generate mutual inductance M due to their proximity (other parts of the multiplexer are omitted in the figure).
  • the two ground inductors may be traces in the same layer or different layers of the multiplexer package substrate, or may be bonding wires. In practice, similar mutual inductances may occur between any two filters of a multiplexer.
  • the inventor found that if there is mutual inductance coupling between the ground inductances of different filters in the multiplexer, the isolation between these filters will deteriorate. For example, the mutual inductance M in FIGS. 2A and 2B will deteriorate the isolation between filter 1 and filter n.
  • the present invention provides a multiplexer, a method for improving the isolation of the multiplexer, and a communication device, and filters in the multiplexer have better isolation.
  • the present invention provides the following technical solutions:
  • a multiplexer includes two or more parallel filters, each of the filters includes a plurality of piezoelectric acoustic wave resonators, the piezoelectric acoustic wave resonator includes an inductance to ground, and the multiplexer has At least one capacitive structure, two poles of the capacitive structure are respectively connected to the remote ends of two grounding inductors, the two grounding inductors belong to different filters and there is mutual inductance between the two grounding inductors.
  • Capacitive structures are structures capable of producing capacitive properties in certain frequency bands.
  • the capacitive structure includes one of the following: a piezoelectric acoustic wave resonator; a plate capacitor in a filter chip; an interdigital capacitor in the filter chip; a capacitive structure in the filter chip; a filter chip Capacitive devices outside the filter chip; capacitive structure outside the filter chip.
  • the distance between the capacitive structure and the ground inductance without mutual inductance in the filter, as well as the distance from the input end and the output end of the filter are all more than 50um, or more than 200um.
  • a plurality of the filters are fabricated in the same chip; or, a plurality of the filters are fabricated in a plurality of chips, and the plurality of chips are arranged in a stacked manner or on the same plane.
  • the first inductance to ground and the second inductance to ground there is mutual inductance between the first inductance to ground and the second inductance to ground, and between the first inductance to ground and the third inductance to ground in the multiple parallel filters, wherein the first, The second and third ground inductances belong to different filters; the remote ends of the first and second ground inductances have a first capacitive structure, and the remote ends of the first and third ground inductances have a first capacitive structure.
  • the fourth inductance to ground and the fifth inductance to ground of the first filter in the plurality of parallel filters are respectively the same as the inductance to ground of the sixth and the seventh inductance to ground of the second filter.
  • Mutual inductance exists; a third capacitive structure is provided between the remote ends of the fourth and sixth ground inductances, and a fourth capacitive structure is provided between the remote ends of the fifth and seventh ground inductances.
  • the capacitance value of the capacitive structure is 0.01pF to 10pF.
  • the ground inductance is a trace in the filter substrate, a bonding wire in the filter, or a trace of each pin of the filter chip.
  • a method for improving isolation of a multiplexer wherein the multiplexer includes a plurality of parallel filters, each of the filters includes a plurality of piezoelectric acoustic wave resonators, and the piezoelectric acoustic wave resonator includes an inductance to ground , the method includes: setting a capacitive structure between two remote ends of the ground inductance with mutual inductance, the capacitive structure is used to improve the isolation between the two filters in the multiplexer, the The two ground inductances belong to the two filters.
  • a communication device includes the multiplexer of the present invention.
  • the technical solution of the present invention for the two filters in the multiplexer, if there is mutual inductance between the ground inductances of the two filters, a capacitive structure is added between the remote ends of the ground inductances. Because the above-mentioned mutual inductance will cause the signal to generate a leakage path between multiple filters and deteriorate the isolation, the addition of the capacitor can reduce the amplitude of the leaked signal by changing the impedance of the leakage path, thereby improving the isolation. According to the technical solution of the present invention, various flexible ways can be used to increase the capacitive structure without increasing the distance between multiple filters, which is also more conducive to the miniaturization of the device.
  • FIG. 1 is a schematic diagram of a structure according to an acoustic wave filter in the prior art
  • 2A is a schematic diagram of a structure of a multiplexer according to the prior art
  • 2B is a schematic diagram of the mutual inductance between the ground inductances of different filters in a multiplexer according to the prior art
  • FIG. 3 is a schematic diagram of adding a capacitive structure between ground inductances with mutual inductance according to an embodiment of the present invention
  • FIG. 4 is a schematic diagram of another additive capacitive structure according to an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of yet another additive capacitive structure according to an embodiment of the present invention.
  • 6A-6C are schematic diagrams of capacitive structures arranged in accordance with embodiments of the present invention.
  • FIGS. 7A to 7C are schematic diagrams of isolation improvement of filters in a duplexer according to an embodiment of the present invention.
  • FIG. 8A is a schematic diagram of a distance between a capacitive structure and a pin of a multiplexer according to an embodiment of the present invention.
  • 8B is a schematic diagram illustrating the effect of the distance between the capacitive structure and the pins of the multiplexer on isolation according to an embodiment of the present invention.
  • FIG. 3 is a schematic diagram of adding a capacitive structure between ground inductances with mutual inductance according to an embodiment of the present invention.
  • Fig. 3 is based on the multiplexer shown in Fig. 2, in which a capacitive structure C1 is set between G11 and Gn1. Both ends of the capacitive structure C1 are respectively connected to the remote ends of the above-mentioned grounding inductance, that is, the ungrounded end of the inductance.
  • the addition of the capacitive structure can change the impedance of the leakage path, thereby reducing the amplitude of the leakage signal, thereby improving the isolation.
  • the capacitive structure can be added in the above manner , thereby improving the isolation between filters.
  • FIG. 4 is a schematic diagram of another added capacitive structure according to an embodiment of the present invention, wherein the inductance G11 to ground of filter 1 and the inductance Gn to ground of filter n are between the mutual inductance M1 except for the mutual inductance M1.
  • a capacitive structure C2 is also added to the multiplexer shown in FIG. 4 , and the position is shown in the figure.
  • FIG. 5 is a schematic diagram of another capacitive structure added according to an embodiment of the present invention, in which the mutual inductance M1 is added between the filter 1 except its ground inductance G11 and the ground inductance Gn1 of the filter n.
  • the ground inductance G11 and the ground inductance Gk2 of the filter k at the output end Fk also have a mutual inductance M3, and a capacitive structure C3 is also added to the multiplexer shown in FIG. 5, and the location is shown in the figure shown in.
  • the above capacitive structure is represented by the symbol of capacitance in the figure.
  • it can be a capacitive element, such as a plate capacitor, an interdigital capacitor, etc., which can be realized in the layout of the filter (that is, it is processed and manufactured on the same lining as the filter).
  • Bottom it can also be a piezoelectric acoustic resonator, using its own capacitive properties in a specific frequency band.
  • It can also be other capacitive structures, that is, structures that can generate capacitive electrical characteristics in certain frequency bands, such as two traces or bonding wires that are close to each other, metal structures with edges close to each other or staggered up and down. That is, the capacitive structure may have multiple implementations, and may coexist in the same multiplexer.
  • the two capacitive structures in FIG. 4 may respectively adopt different structures from the above-mentioned multiple capacitive structures.
  • FIGS. 6A to 6C are schematic diagrams of capacitive structures arranged according to embodiments of the present invention.
  • the plate capacitor 61 (as shown in FIG. 6A ) can be integrated in the substrate, and the finger capacitor 62 (as shown in FIG. 6B ) can also be integrated in the substrate.
  • It can also be implemented inside the chip; it can also be a discrete device, such as a chip capacitor; in addition, it can be a capacitive structure inside or outside the chip, such as the capacitance generated between the layers in the chip , or capacitance generated between metal parts of different layers of the substrate, etc.
  • the chip mentioned in this article refers to the unit formed by processing the piezoelectric acoustic wave filter on the wafer substrate.
  • a resonator can also be integrated between the inductors G11 and G12 with mutual inductance.
  • the 63 resonator 63 plays the role of a capacitive element, which can be connected to one of the inductors G11 and G12 by using a separate chip. It can also be in one filter chip or multiple filter chips of the multiplexer (for example, multiple resonators that function as capacitive elements are required). The resonator frequency of this resonator is different from the resonant frequency of the original resonator in each filter.
  • FIGS. 7A to 7C are schematic diagrams illustrating the isolation improvement of the filter in the duplexer according to the embodiment of the present invention.
  • the thick line is the isolation curve without mutual inductance
  • the thin line is the curve of adding a 5pH mutual inductance and then adding a 0.15pF capacitance to both ends of the mutual inductance. It can be seen that after adding capacitors, the effect of mutual inductance on the deterioration of isolation is almost eliminated.
  • the added capacitance value has an optimal value interval, which is related to the frequency. In the frequency range shown in the above figures, the capacitance value can be 0.01pF to 10pF.
  • FIG. 8A is a schematic diagram of the distance between the capacitive structure and the pins of the multiplexer according to an embodiment of the present invention, wherein D1 to D5 are at least greater than 50um, preferably more than 200um.
  • 8B is a schematic diagram illustrating the influence of the distance between the capacitive structure and the pins of the multiplexer on the isolation according to an embodiment of the present invention, wherein the thick line corresponds to the distance less than 50um, and the thick line corresponds to the distance greater than 200um. As can be seen from the figure, the distance needs to be greater than 50um, and better than 200um.
  • the technical solution of the present invention for the two filters in the multiplexer, if there is mutual inductance between the ground inductances of the two filters, a capacitive structure is added between the remote ends of the ground inductances. Because the above-mentioned mutual inductance will cause the signal to generate a leakage path between multiple filters and deteriorate the isolation, the addition of the capacitor can reduce the amplitude of the leaked signal by changing the impedance of the leakage path, thereby improving the isolation. According to the technical solution of the present invention, various flexible ways can be used to increase the capacitive structure without increasing the distance between multiple filters, which is also more conducive to the miniaturization of the device.

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

Disclosed are a multiplexer, a method for improving the isolation of a multiplexer, and a communication device, wherein there is better isolation between filters in the multiplexer. The multiplexer includes two or more filters connected in parallel, wherein each of the filters includes a plurality of piezoelectric acoustic wave resonators, and the piezoelectric acoustic wave resonators include grounded inductors. The multiplexer has at least one capacitive structure, two poles of the capacitive structure are respectively connected to distal ends of the two grounded inductors, the two grounded inductors belong to different filters, and there is mutual inductance between the two grounded inductors.

Description

多工器和改善多工器隔离度的方法以及通信设备Multiplexer, method for improving isolation of multiplexer, and communication device 技术领域technical field
本发明涉及滤波器技术领域,特别地涉及一种多工器和改善多工器隔离度的方法以及通信设备。The present invention relates to the technical field of filters, in particular to a multiplexer, a method for improving the isolation of the multiplexer, and a communication device.
背景技术Background technique
近年来的通信设备小型化和高性能趋势的加快,给射频前端提出了更高的挑战。在射频通信前端中,一方面要通过减小芯片和封装基板的尺寸来实现小型化,另一方面要通过减少损耗来源以及更好的谐振器配合设计来实现更好的性能。在现有的滤波器结构中,用于匹配的无源器件较多,同时用于改善特定性能比如滚降插损等也需要额外引入更多的电感、电容、耦合等多种结构。In recent years, the trend of miniaturization and high performance of communication equipment has accelerated, posing higher challenges to the RF front-end. In the RF communication front-end, miniaturization is achieved by reducing the size of the chip and package substrate on the one hand, and better performance is achieved by reducing loss sources and better resonator fit design on the other hand. In the existing filter structure, there are many passive components used for matching, and at the same time, to improve specific performance such as roll-off insertion loss, etc., additional structures such as more inductance, capacitance, and coupling need to be introduced.
普通的滤波器的一种典型结构如图1所示,图1是根据现有技术中的声波滤波器的一种结构的示意图。这种滤波器10中,输入端131和输出端132之间有电感121、122以及多个谐振器(通常称作串联谐振器)101~104,各串联谐振器的连接点与接地端之间的多个支路(通常称作并联支路)上分别设置有谐振器111~113(通常称作并联谐振器),以及电感123~125。因为并联谐振器经由电感123~125接地,所以电感123~125又称作对地电感。A typical structure of a common filter is shown in FIG. 1 , which is a schematic diagram of a structure of an acoustic wave filter according to the prior art. In this filter 10, there are inductors 121, 122 and a plurality of resonators (usually called series resonators) 101 to 104 between the input terminal 131 and the output terminal 132, and the connection point of each series resonator is connected to the ground terminal. Resonators 111 to 113 (usually referred to as parallel resonators) and inductors 123 to 125 are respectively provided on the multiple branches (usually referred to as parallel branches) of the . Because the parallel resonator is grounded through the inductances 123 to 125, the inductances 123 to 125 are also called ground inductances.
上述的谐振器为压电声波谐振器,压电声波谐振器是指利用压电效应产生谐振特性的谐振器,常用的包括但不限于:体声波压电谐振器(如FABR、SMR等)、表面声波压电谐振器。The above-mentioned resonators are piezoelectric acoustic wave resonators, and piezoelectric acoustic wave resonators refer to resonators that utilize piezoelectric effect to generate resonance characteristics. Commonly used ones include but are not limited to: bulk acoustic wave piezoelectric resonators (such as FABR, SMR, etc.), Surface acoustic wave piezoelectric resonators.
普通的多工器的一种典型结构如图2A所示,图2A是根据现有技术中的多工器的一种结构的示意图。该多工器具有公共端Common和n个输 出端F1至Fn,以及包含n个滤波器。各滤波器具有对地电感,作为示意,图中示出了滤波器1的两个对地电感G11、G12,以及滤波器n的两个对地电感Gn1、Gn2,这些对地电感一端连接至滤波器中的谐振器(图中未示出,可参考图1),另一端连接至接地端GND。A typical structure of a common multiplexer is shown in FIG. 2A , which is a schematic diagram of a structure of a multiplexer according to the prior art. The multiplexer has a common terminal Common and n output terminals F1 to Fn, and contains n filters. Each filter has an inductance to ground. As an illustration, the figure shows two inductances G11 and G12 to ground of filter 1 and two inductances to ground Gn1 and Gn2 of filter n. One end of these inductances to ground is connected to The resonator in the filter (not shown in the figure, please refer to Figure 1), the other end is connected to the ground terminal GND.
图2B是根据现有技术中的多工器中不同滤波器的对地电感之间的互感的示意图。图2B以图2A所示的多工器为例,例如多工器20中的对地电感G11和Gn1因靠近而产生了互感M(图中省略多工器的其他部分)。该两个对地电感可以是在多工器封装基板的同一层或不同层中的走线,也可以是键合线。在实际当中,多工器的任两个滤波器之间都有可能产生类似的互感。FIG. 2B is a schematic diagram of mutual inductance between ground inductances of different filters in a multiplexer according to the prior art. FIG. 2B takes the multiplexer shown in FIG. 2A as an example. For example, the ground inductances G11 and Gn1 in the multiplexer 20 generate mutual inductance M due to their proximity (other parts of the multiplexer are omitted in the figure). The two ground inductors may be traces in the same layer or different layers of the multiplexer package substrate, or may be bonding wires. In practice, similar mutual inductances may occur between any two filters of a multiplexer.
发明人在实现本发明的过程中发现,多工器中的不同的滤波器的对地电感之间如存在互感耦合,会恶化这些滤波器之间的隔离度。例如图2A和图2B中的互感M,会恶化滤波器1和滤波器n之间的隔离度。During the process of implementing the present invention, the inventor found that if there is mutual inductance coupling between the ground inductances of different filters in the multiplexer, the isolation between these filters will deteriorate. For example, the mutual inductance M in FIGS. 2A and 2B will deteriorate the isolation between filter 1 and filter n.
发明内容SUMMARY OF THE INVENTION
有鉴于此,本发明提出一种多工器和改善多工器隔离度的方法以及通信设备,该多工器中的滤波器之间有更好的隔离度。本发明提供如下技术方案:In view of this, the present invention provides a multiplexer, a method for improving the isolation of the multiplexer, and a communication device, and filters in the multiplexer have better isolation. The present invention provides the following technical solutions:
一种多工器,包含两个或多个并联的滤波器,各所述滤波器包含多个压电声波谐振器,所述压电声波谐振器中包含对地电感,所述多工器具有至少一个容性结构,该容性结构的两极分别连接至两个对地电感的远地端,该两个对地电感属于不同的所述滤波器并且该两个对地电感之间存在互感。容性结构是能够在某些频段产生具有电容特性的结构。A multiplexer includes two or more parallel filters, each of the filters includes a plurality of piezoelectric acoustic wave resonators, the piezoelectric acoustic wave resonator includes an inductance to ground, and the multiplexer has At least one capacitive structure, two poles of the capacitive structure are respectively connected to the remote ends of two grounding inductors, the two grounding inductors belong to different filters and there is mutual inductance between the two grounding inductors. Capacitive structures are structures capable of producing capacitive properties in certain frequency bands.
可选地,所述容性结构包括如下之一种:压电声波谐振器;滤波器芯片内的平板电容;滤波器芯片内的插指电容;滤波器芯片内的容性结构;滤波器芯片外的容性器件;滤波器芯片外的容性结构。Optionally, the capacitive structure includes one of the following: a piezoelectric acoustic wave resonator; a plate capacitor in a filter chip; an interdigital capacitor in the filter chip; a capacitive structure in the filter chip; a filter chip Capacitive devices outside the filter chip; capacitive structure outside the filter chip.
可选地,所述容性结构与滤波器中的不存在互感的对地电感的距离、以及与所述滤波器的输入端、输出端的距离,均在50um以上,或者均在200um以上。Optionally, the distance between the capacitive structure and the ground inductance without mutual inductance in the filter, as well as the distance from the input end and the output end of the filter, are all more than 50um, or more than 200um.
可选地,多个所述滤波器制作于同一个芯片中;或者,多个所述滤波器制作于多个芯片中,该多个芯片堆叠式排布或者在同一平面排布。Optionally, a plurality of the filters are fabricated in the same chip; or, a plurality of the filters are fabricated in a plurality of chips, and the plurality of chips are arranged in a stacked manner or on the same plane.
可选地,所述多个并联的滤波器中的第一对地电感与第二对地电感之间、第一对地电感与第三对地电感之间,均存在互感,其中第一、第二、第三对地电感分属于不同的滤波器;第一、第二对地电感的远地端之间具有第一容性结构,第一、第三对地电感的远地端之间具有第二容性结构。Optionally, there is mutual inductance between the first inductance to ground and the second inductance to ground, and between the first inductance to ground and the third inductance to ground in the multiple parallel filters, wherein the first, The second and third ground inductances belong to different filters; the remote ends of the first and second ground inductances have a first capacitive structure, and the remote ends of the first and third ground inductances have a first capacitive structure. Has a second capacitive structure.
可选地,所述多个并联的滤波器中的第一滤波器的第四对地电感和第五对地电感,分别与第二滤波器中的第六对地电感和第七对地电感存在互感;第四、第六对地电感的远地端之间具有第三容性结构,第五、第七对地电感的远地端之间具有第四容性结构。Optionally, the fourth inductance to ground and the fifth inductance to ground of the first filter in the plurality of parallel filters are respectively the same as the inductance to ground of the sixth and the seventh inductance to ground of the second filter. Mutual inductance exists; a third capacitive structure is provided between the remote ends of the fourth and sixth ground inductances, and a fourth capacitive structure is provided between the remote ends of the fifth and seventh ground inductances.
可选地,所述容性结构的电容值为0.01pF至10pF。Optionally, the capacitance value of the capacitive structure is 0.01pF to 10pF.
可选地,所述对地电感是滤波器基板中的走线、滤波器中的键合线、或者滤波器芯片各管脚的走线。Optionally, the ground inductance is a trace in the filter substrate, a bonding wire in the filter, or a trace of each pin of the filter chip.
一种改善多工器隔离度的方法,所述多工器包含多个并联的滤波器,各所述滤波器包含多个压电声波谐振器,所述压电声波谐振器中包含对地电感,该方法包括:在两个存在互感的对地电感的远地端之间设置容性结构,该容性结构用于改善所述多工器中的两个滤波器之间的隔离度,该两个对地电感分属于所述两个滤波器。A method for improving isolation of a multiplexer, wherein the multiplexer includes a plurality of parallel filters, each of the filters includes a plurality of piezoelectric acoustic wave resonators, and the piezoelectric acoustic wave resonator includes an inductance to ground , the method includes: setting a capacitive structure between two remote ends of the ground inductance with mutual inductance, the capacitive structure is used to improve the isolation between the two filters in the multiplexer, the The two ground inductances belong to the two filters.
一种通信设备,包含本发明所述的多工器。A communication device includes the multiplexer of the present invention.
根据本发明的技术方案,对于多工器中的两个滤波器,若该两个滤波器的对地电感之间存在互感,则在此对地电感的远地端之间加入容性结构。因为上述互感会导致信号在多个滤波器之间产生泄露通路,恶化隔离度,所以电容的加入能够以改变泄露通路的阻抗的方式使泄露信号幅度降低,从而改善了隔离度。根据本发明的技术方案,可以采用各种灵活方式增加容性结构,无需增加多个滤波器之间的距离,从而也更加有利于器件的小型化。According to the technical solution of the present invention, for the two filters in the multiplexer, if there is mutual inductance between the ground inductances of the two filters, a capacitive structure is added between the remote ends of the ground inductances. Because the above-mentioned mutual inductance will cause the signal to generate a leakage path between multiple filters and deteriorate the isolation, the addition of the capacitor can reduce the amplitude of the leaked signal by changing the impedance of the leakage path, thereby improving the isolation. According to the technical solution of the present invention, various flexible ways can be used to increase the capacitive structure without increasing the distance between multiple filters, which is also more conducive to the miniaturization of the device.
附图说明Description of drawings
为了说明而非限制的目的,现在将根据本发明的优选实施例、特别是参考附图来描述本发明,其中:For purposes of illustration and not limitation, the present invention will now be described in accordance with preferred embodiments thereof, particularly with reference to the accompanying drawings, wherein:
图1是根据现有技术中的声波滤波器的一种结构的示意图;1 is a schematic diagram of a structure according to an acoustic wave filter in the prior art;
图2A是根据现有技术中的多工器的一种结构的示意图;2A is a schematic diagram of a structure of a multiplexer according to the prior art;
图2B是根据现有技术中的多工器中不同滤波器的对地电感之间的互感的示意图;2B is a schematic diagram of the mutual inductance between the ground inductances of different filters in a multiplexer according to the prior art;
图3是根据本发明实施方式的在具有互感的对地电感之间添加容性结构的示意图;3 is a schematic diagram of adding a capacitive structure between ground inductances with mutual inductance according to an embodiment of the present invention;
图4是根据本发明实施方式的另一种添加容性结构的示意图;4 is a schematic diagram of another additive capacitive structure according to an embodiment of the present invention;
图5是根据本发明实施方式的又一种添加容性结构的示意图;FIG. 5 is a schematic diagram of yet another additive capacitive structure according to an embodiment of the present invention;
图6A至图6C是根据本发明实施方式的设置的容性结构的示意图;6A-6C are schematic diagrams of capacitive structures arranged in accordance with embodiments of the present invention;
图7A至图7C是根据本发明实施方式的双工器中的滤波器的隔离度改善情况的示意图;7A to 7C are schematic diagrams of isolation improvement of filters in a duplexer according to an embodiment of the present invention;
图8A是根据本发明实施方式的容性结构与多工器的管脚的距离的示意图;8A is a schematic diagram of a distance between a capacitive structure and a pin of a multiplexer according to an embodiment of the present invention;
图8B是根据本发明实施方式的容性结构与多工器的管脚的距离对隔离度的影响的示意图。8B is a schematic diagram illustrating the effect of the distance between the capacitive structure and the pins of the multiplexer on isolation according to an embodiment of the present invention.
具体实施方式Detailed ways
以下结合附图对本发明实施方式的技术方案加以说明。在多工器中, 两个对地电感如果在空间中靠近,则可能产生互感,二者可能是位于基板中的同层或不同层的走线,也可能是任意两条键合线。不同滤波器的对地电感之间的互感会导致信号在滤波器之间产生泄露通路,从而恶化隔离度。The technical solutions of the embodiments of the present invention will be described below with reference to the accompanying drawings. In a multiplexer, if two ground inductances are close in space, mutual inductance may occur, and the two may be traces on the same layer or different layers in the substrate, or may be any two bonding wires. Mutual inductance between the ground inductances of different filters can lead to signal leakage paths between the filters, thereby deteriorating isolation.
以图2所示的多工器为例,例如其中的滤波器1的对地电感G11和滤波器n的对地电感Gn1之间存在互感M1,则本发明实施方式中,如图3所示添加容性结构,图3是根据本发明实施方式的在具有互感的对地电感之间添加容性结构的示意图。图3以图2所示多工器为基础,在其中的G11和Gn1之间设置容性结构C1。容性结构C1的两端分别连接在上述对地电感的远地端,即电感的不接地的一端。Taking the multiplexer shown in FIG. 2 as an example, for example, there is a mutual inductance M1 between the ground inductance G11 of the filter 1 and the ground inductance Gn1 of the filter n. In the embodiment of the present invention, as shown in FIG. 3 Adding a capacitive structure, FIG. 3 is a schematic diagram of adding a capacitive structure between ground inductances with mutual inductance according to an embodiment of the present invention. Fig. 3 is based on the multiplexer shown in Fig. 2, in which a capacitive structure C1 is set between G11 and Gn1. Both ends of the capacitive structure C1 are respectively connected to the remote ends of the above-mentioned grounding inductance, that is, the ungrounded end of the inductance.
容性结构的加入能够改变泄露通路的阻抗,从而使泄露信号幅度降低,继而改善隔离度。从这个意义上来说,凡是有互感的两个对地电感(可以是滤波器并联支路中的任意一支),只要二者分属于不同的滤波器,则均可以按上述方式添加容性结构,从而改善滤波器之间的隔离度。The addition of the capacitive structure can change the impedance of the leakage path, thereby reducing the amplitude of the leakage signal, thereby improving the isolation. In this sense, for any two ground inductances with mutual inductance (which can be any of the parallel branches of the filter), as long as the two belong to different filters, the capacitive structure can be added in the above manner , thereby improving the isolation between filters.
例如图4所示,图4是根据本发明实施方式的另一种添加容性结构的示意图,其中对于滤波器1的对地电感G11和滤波器n的对地电感Gn之间除了互感M1之外还存在的互感M2,则在图4所示的多工器中还添加有容性结构C2,位置如图中所示。For example, as shown in FIG. 4, FIG. 4 is a schematic diagram of another added capacitive structure according to an embodiment of the present invention, wherein the inductance G11 to ground of filter 1 and the inductance Gn to ground of filter n are between the mutual inductance M1 except for the mutual inductance M1. In addition to the mutual inductance M2 that exists outside, a capacitive structure C2 is also added to the multiplexer shown in FIG. 4 , and the position is shown in the figure.
又如图5所示,图5是根据本发明实施方式的又一种添加容性结构的示意图,其中滤波器1除了其对地电感G11和滤波器n的对地电感Gn1之间除了互感M1之外,其对地电感G11与输出端Fk之处的滤波器k的对地电感Gk2也存在互感M3,则在图5所示的多工器中还添加有容性结构C3,位置如图中所示。Also shown in FIG. 5 , FIG. 5 is a schematic diagram of another capacitive structure added according to an embodiment of the present invention, in which the mutual inductance M1 is added between the filter 1 except its ground inductance G11 and the ground inductance Gn1 of the filter n. In addition, the ground inductance G11 and the ground inductance Gk2 of the filter k at the output end Fk also have a mutual inductance M3, and a capacitive structure C3 is also added to the multiplexer shown in FIG. 5, and the location is shown in the figure shown in.
上述容性结构在图中是以电容的符号作示意,在实现中可以是电容元件,例如平板电容、插指电容等,可在滤波器的版图中实现(即与滤波器加工制造在同一衬底上);也可以是压电声波谐振器,利用其本身在特定 频段体现出的电容性质。还可以是其他容性的结构,即能够在某些频段产生容性电学特性的结构,例如两条互相接近的走线或键合线,边缘靠近或者上下交错的金属结构等。即容性结构可以有多种实现方式,可以并存于同一多工器中,例如图4中的2个容性结构可分别采用上述的多种容性结构中的不同结构。The above capacitive structure is represented by the symbol of capacitance in the figure. In the implementation, it can be a capacitive element, such as a plate capacitor, an interdigital capacitor, etc., which can be realized in the layout of the filter (that is, it is processed and manufactured on the same lining as the filter). Bottom); it can also be a piezoelectric acoustic resonator, using its own capacitive properties in a specific frequency band. It can also be other capacitive structures, that is, structures that can generate capacitive electrical characteristics in certain frequency bands, such as two traces or bonding wires that are close to each other, metal structures with edges close to each other or staggered up and down. That is, the capacitive structure may have multiple implementations, and may coexist in the same multiplexer. For example, the two capacitive structures in FIG. 4 may respectively adopt different structures from the above-mentioned multiple capacitive structures.
例如图6A至图6C所示,图6A至图6C是根据本发明实施方式的设置的容性结构的示意图。以多工器60为例,在图2B的基础上,可以在基板中集成平板电容61(如图6A所示),也可以在基板中集成插指电容62(如图6B所示),这里的平板电容和插指电容,也可以在芯片内部实现;也可以是分立器件,例如贴片电容;此外还可以是芯片内或芯片外的容性结构,例如芯片内的层之间产生的电容,或者基板的不同层的金属部分之间产生的电容等。本文中所说芯片是指在晶圆衬底上加工压电声波滤波器所形成的单元。For example, as shown in FIGS. 6A to 6C , FIGS. 6A to 6C are schematic diagrams of capacitive structures arranged according to embodiments of the present invention. Taking the multiplexer 60 as an example, on the basis of FIG. 2B , the plate capacitor 61 (as shown in FIG. 6A ) can be integrated in the substrate, and the finger capacitor 62 (as shown in FIG. 6B ) can also be integrated in the substrate. Here It can also be implemented inside the chip; it can also be a discrete device, such as a chip capacitor; in addition, it can be a capacitive structure inside or outside the chip, such as the capacitance generated between the layers in the chip , or capacitance generated between metal parts of different layers of the substrate, etc. The chip mentioned in this article refers to the unit formed by processing the piezoelectric acoustic wave filter on the wafer substrate.
此外还可以在具有互感的电感G11和G12之间集成谐振器,如图6C所示,63谐振器63起到容性元件的作用,其可以是采用分立的芯片来连接至电感G11和G12之间,也可以是在多工器的其中一颗滤波器芯片或者多颗滤波器芯片中(如需要多个起到容性元件作用的谐振器)。此谐振器的谐振器频率和各滤波器中原有谐振器的谐振频率不同。In addition, a resonator can also be integrated between the inductors G11 and G12 with mutual inductance. As shown in FIG. 6C, the 63 resonator 63 plays the role of a capacitive element, which can be connected to one of the inductors G11 and G12 by using a separate chip. It can also be in one filter chip or multiple filter chips of the multiplexer (for example, multiple resonators that function as capacitive elements are required). The resonator frequency of this resonator is different from the resonant frequency of the original resonator in each filter.
添加上述的容性结构之后,滤波器之间的隔离度得以改善。可参见图7A至图7C,图7A至图7C是根据本发明实施方式的双工器中的滤波器的隔离度改善情况的示意图。如图7A所示,粗线是没有互感的情况下的隔离度曲线,细线是加入了5pH的互感然后在互感的两端加入了0.15pF电容的曲线。可以看出,在加入电容后,互感对隔离度恶化的效果几乎消除。After adding the capacitive structure described above, the isolation between the filters is improved. Referring to FIGS. 7A to 7C , FIGS. 7A to 7C are schematic diagrams illustrating the isolation improvement of the filter in the duplexer according to the embodiment of the present invention. As shown in FIG. 7A , the thick line is the isolation curve without mutual inductance, and the thin line is the curve of adding a 5pH mutual inductance and then adding a 0.15pF capacitance to both ends of the mutual inductance. It can be seen that after adding capacitors, the effect of mutual inductance on the deterioration of isolation is almost eliminated.
当加入电容量不同时,对应的改善效果也不同,如图7B所示,图7B中粗线对应于加入了0.1pF的电容,细线对应于加入了0.15pF的电容。又如图7C所示,图7C中粗线对应于加入了0.4pF的电容,细线对应于加入 了0.15pF的电容。可以看出加入的电容值有一个最优值区间,其与频率有关,在上述各图中所示的频率范围内,该电容值可以为0.01pF至10pF。When the added capacitance is different, the corresponding improvement effect is also different. As shown in FIG. 7B , the thick line in FIG. 7B corresponds to the added capacitance of 0.1 pF, and the thin line corresponds to the added capacitance of 0.15 pF. Also as shown in FIG. 7C , the thick line in FIG. 7C corresponds to the addition of a 0.4pF capacitance, and the thin line corresponds to the addition of a 0.15pF capacitance. It can be seen that the added capacitance value has an optimal value interval, which is related to the frequency. In the frequency range shown in the above figures, the capacitance value can be 0.01pF to 10pF.
添加的容性结构与多工器的其他管脚之间应存在一定的距离,以免产生额外的、会导致多工器隔离度性能恶化的耦合通路。如图8A所示,图8A是根据本发明实施方式的容性结构与多工器的管脚的距离的示意图,其中D1至D5至少大于50um,最好是200um以上。图8B是根据本发明实施方式的容性结构与多工器的管脚的距离对隔离度的影响的示意图,其中粗线对应于该距离小于50um,粗线对应于该距离大于200um。从图中可以看出,该距离需要大于50um,200um以上更好。There should be some distance between the added capacitive structure and the other pins of the multiplexer to avoid additional coupling paths that would degrade the isolation performance of the multiplexer. As shown in FIG. 8A , FIG. 8A is a schematic diagram of the distance between the capacitive structure and the pins of the multiplexer according to an embodiment of the present invention, wherein D1 to D5 are at least greater than 50um, preferably more than 200um. 8B is a schematic diagram illustrating the influence of the distance between the capacitive structure and the pins of the multiplexer on the isolation according to an embodiment of the present invention, wherein the thick line corresponds to the distance less than 50um, and the thick line corresponds to the distance greater than 200um. As can be seen from the figure, the distance needs to be greater than 50um, and better than 200um.
根据本发明的技术方案,对于多工器中的两个滤波器,若该两个滤波器的对地电感之间存在互感,则在此对地电感的远地端之间加入容性结构。因为上述互感会导致信号在多个滤波器之间产生泄露通路,恶化隔离度,所以电容的加入能够以改变泄露通路的阻抗的方式使泄露信号幅度降低,从而改善了隔离度。根据本发明的技术方案,可以采用各种灵活方式增加容性结构,无需增加多个滤波器之间的距离,从而也更加有利于器件的小型化。According to the technical solution of the present invention, for the two filters in the multiplexer, if there is mutual inductance between the ground inductances of the two filters, a capacitive structure is added between the remote ends of the ground inductances. Because the above-mentioned mutual inductance will cause the signal to generate a leakage path between multiple filters and deteriorate the isolation, the addition of the capacitor can reduce the amplitude of the leaked signal by changing the impedance of the leakage path, thereby improving the isolation. According to the technical solution of the present invention, various flexible ways can be used to increase the capacitive structure without increasing the distance between multiple filters, which is also more conducive to the miniaturization of the device.
上述具体实施方式,并不构成对本发明保护范围的限制。本领域技术人员应该明白的是,取决于设计要求和其他因素,可以发生各种各样的修改、组合、子组合和替代。任何在本发明的精神和原则之内所作的修改、等同替换和改进等,均应包含在本发明保护范围之内。The above-mentioned specific embodiments do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions may occur depending on design requirements and other factors. Any modifications, equivalent replacements and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims (10)

  1. 一种多工器,包含两个或多个并联的滤波器,各所述滤波器包含多个压电声波谐振器,所述压电声波谐振器中包含对地电感,其特征在于,A multiplexer, comprising two or more filters in parallel, each of the filters comprising a plurality of piezoelectric acoustic wave resonators, wherein the piezoelectric acoustic wave resonator includes an inductance to ground, characterized in that:
    所述多工器具有至少一个容性结构,该容性结构的两极分别连接至两个对地电感的远地端,该两个对地电感属于不同的所述滤波器并且该两个对地电感之间存在互感。The multiplexer has at least one capacitive structure, and the two poles of the capacitive structure are respectively connected to the remote ends of two grounding inductances, the two grounding inductances belong to different filters and the two grounding There is mutual inductance between inductors.
  2. 根据权利要求1所述的多工器,其特征在于,所述容性结构包括如下至少之一种:The multiplexer according to claim 1, wherein the capacitive structure comprises at least one of the following:
    压电声波谐振器;Piezoelectric acoustic resonator;
    滤波器芯片内的平板电容;The plate capacitor in the filter chip;
    滤波器芯片内的插指电容;Interpolated capacitors in the filter chip;
    滤波器芯片内的容性结构;Capacitive structure inside the filter chip;
    滤波器芯片外的容性器件;Capacitive devices outside the filter chip;
    滤波器芯片外的容性结构。Capacitive structure outside the filter chip.
  3. 根据权利要求1所述的多工器,其特征在于,所述容性结构与滤波器中的不存在互感的对地电感的距离、以及与所述滤波器的输入端、输出端的距离,均在50um以上,或者均在200um以上。The multiplexer according to claim 1, wherein the distance between the capacitive structure and the ground inductance without mutual inductance in the filter, as well as the distance from the input end and the output end of the filter, are all the same. Above 50um, or both above 200um.
  4. 根据权利要求1所述的多工器,其特征在于,The multiplexer of claim 1, wherein:
    多个所述滤波器制作于同一个芯片中;A plurality of the filters are fabricated in the same chip;
    或者,多个所述滤波器制作于多个芯片中,该多个芯片堆叠式排布或者在同一平面排布。Alternatively, a plurality of the filters are fabricated in a plurality of chips, and the plurality of chips are arranged in a stacked manner or on the same plane.
  5. 根据权利要求1所述的多工器,其特征在于,The multiplexer of claim 1, wherein:
    所述多个并联的滤波器中的第一对地电感与第二对地电感之间、第一对地电感与第三对地电感之间,均存在互感,其中第一、第二、第三对地电感分属于不同的滤波器;There are mutual inductances between the first inductance to ground and the second inductance to ground, and between the first inductance to ground and the third inductance to ground in the plurality of parallel filters, wherein the first, second, and third inductances exist. The three-to-ground inductances belong to different filters;
    第一、第二对地电感的远地端之间具有第一容性结构,第一、第三对地电感的远地端之间具有第二容性结构。A first capacitive structure is provided between the remote ends of the first and second ground inductances, and a second capacitive structure is provided between the remote ends of the first and third ground inductances.
  6. 根据权利要求1所述的多工器,其特征在于,The multiplexer of claim 1, wherein:
    所述多个并联的滤波器中的第一滤波器的第四对地电感和第五对地电感,分别与第二滤波器中的第六对地电感和第七对地电感存在互感;The fourth inductance to ground and the fifth inductance to ground of the first filter in the plurality of parallel filters have mutual inductance with the sixth inductance to ground and the seventh inductance to ground in the second filter respectively;
    第四、第六对地电感的远地端之间具有第三容性结构,第五、第七对地电感的远地端之间具有第四容性结构。A third capacitive structure is provided between the remote ends of the fourth and sixth ground inductances, and a fourth capacitive structure is provided between the remote ends of the fifth and seventh ground inductances.
  7. 根据权利要求1所述的多工器,其特征在于,The multiplexer of claim 1, wherein:
    所述容性结构的电容值为0.01pF至10pF。The capacitance value of the capacitive structure is 0.01 pF to 10 pF.
  8. 根据权利要求1至6中任一项所述的多工器,其特征在于,所述对地电感是滤波器基板中的走线、滤波器中的键合线、或者滤波器芯片各管脚的走线。The multiplexer according to any one of claims 1 to 6, wherein the ground inductance is a trace in a filter substrate, a bonding wire in a filter, or each pin of a filter chip 's line.
  9. 一种改善多工器隔离度的方法,所述多工器包含多个并联的滤波器,各所述滤波器包含多个压电声波谐振器,所述压电声波谐振器中包含对地电感,其特征在于,该方法包括:A method for improving isolation of a multiplexer, wherein the multiplexer includes a plurality of parallel filters, each of the filters includes a plurality of piezoelectric acoustic wave resonators, and the piezoelectric acoustic wave resonator includes an inductance to ground , characterized in that the method includes:
    在两个存在互感的对地电感的远地端之间设置容性结构,该容性结构用于改善所述多工器中的两个滤波器之间的隔离度,该两个对地电感分属于所述两个滤波器。A capacitive structure is arranged between the remote ends of two ground inductances with mutual inductance, and the capacitive structure is used to improve the isolation between the two filters in the multiplexer. The two ground inductances belong to the two filters.
  10. 一种通信设备,其特征在于,包含权利要求1至8中任一项所述的多工器。A communication device, comprising the multiplexer according to any one of claims 1 to 8.
PCT/CN2021/143682 2021-01-04 2021-12-31 Multiplexer, method for improving isolation of multiplexer, and communication device WO2022143982A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202110004367.0A CN112865741A (en) 2021-01-04 2021-01-04 Multiplexer and method for improving isolation of multiplexer and communication equipment
CN202110004367.0 2021-01-04

Publications (1)

Publication Number Publication Date
WO2022143982A1 true WO2022143982A1 (en) 2022-07-07

Family

ID=76001436

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/143682 WO2022143982A1 (en) 2021-01-04 2021-12-31 Multiplexer, method for improving isolation of multiplexer, and communication device

Country Status (2)

Country Link
CN (1) CN112865741A (en)
WO (1) WO2022143982A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112865741A (en) * 2021-01-04 2021-05-28 诺思(天津)微系统有限责任公司 Multiplexer and method for improving isolation of multiplexer and communication equipment

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110018653A1 (en) * 2009-07-27 2011-01-27 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Duplexer having resonator filters
CN102035490A (en) * 2009-09-25 2011-04-27 Elmec株式会社 Common mode filter
JPWO2011065270A1 (en) * 2009-11-27 2013-04-11 エルメック株式会社 Common mode filter
TW201406059A (en) * 2012-07-20 2014-02-01 Univ Nat Taiwan Signal transmission circuit and signal transmission cell thereof
CN111064447A (en) * 2019-11-15 2020-04-24 天津大学 Duplexer
CN111384908A (en) * 2020-03-12 2020-07-07 苏州英嘉通半导体有限公司 Power divider circuit, power divider and design method of power divider circuit
CN112865741A (en) * 2021-01-04 2021-05-28 诺思(天津)微系统有限责任公司 Multiplexer and method for improving isolation of multiplexer and communication equipment

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI252605B (en) * 2005-05-31 2006-04-01 Ind Tech Res Inst Multilayered chip-type triplexer
JP6556093B2 (en) * 2016-05-11 2019-08-07 太陽誘電株式会社 Filters and multiplexers
JP6590781B2 (en) * 2016-11-10 2019-10-16 太陽誘電株式会社 Filters and multiplexers
CN109831174A (en) * 2018-11-28 2019-05-31 天津大学 A kind of duplexer
CN111342813B (en) * 2018-12-18 2023-05-12 天津大学 Radio frequency piezoelectric multiplexer and electronic equipment for improving isolation based on phase shift network

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110018653A1 (en) * 2009-07-27 2011-01-27 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Duplexer having resonator filters
CN102035490A (en) * 2009-09-25 2011-04-27 Elmec株式会社 Common mode filter
JPWO2011065270A1 (en) * 2009-11-27 2013-04-11 エルメック株式会社 Common mode filter
TW201406059A (en) * 2012-07-20 2014-02-01 Univ Nat Taiwan Signal transmission circuit and signal transmission cell thereof
CN111064447A (en) * 2019-11-15 2020-04-24 天津大学 Duplexer
CN111384908A (en) * 2020-03-12 2020-07-07 苏州英嘉通半导体有限公司 Power divider circuit, power divider and design method of power divider circuit
CN112865741A (en) * 2021-01-04 2021-05-28 诺思(天津)微系统有限责任公司 Multiplexer and method for improving isolation of multiplexer and communication equipment

Also Published As

Publication number Publication date
CN112865741A (en) 2021-05-28

Similar Documents

Publication Publication Date Title
US10355667B2 (en) Ladder filter, elastic wave filter module, and duplexer
US8279021B2 (en) Duplexer
US10361679B2 (en) Multiplexer
JP5101048B2 (en) Duplexer
US7479846B2 (en) Duplexer
US7586389B2 (en) Impedance transformation and filter using bulk acoustic wave technology
US10615775B2 (en) Multiplexer, transmission apparatus, and reception apparatus
JP4468185B2 (en) Cavity filter structure with equal resonant frequency
CN111342814B (en) Bulk acoustic wave filter, multiplexer and electronic equipment
CN112350684B (en) Acoustic wave filter, multiplexer and communication equipment
JP2018129683A (en) Filter circuit, multiplexer, and module
JPWO2010001522A1 (en) Band stop filter
CN109417378A (en) Multiplexer, high-frequency front-end circuit and communication device
US20190363696A1 (en) Filter including acoustic wave resonator in parallel with circuit element
JP2006513662A5 (en)
CN110504942A (en) A kind of bulk accoustic wave filter and electronic equipment
US10679114B2 (en) Radio-frequency front end circuit, high-frequency signal processing circuit, and communication device
WO2022143982A1 (en) Multiplexer, method for improving isolation of multiplexer, and communication device
CN109672421A (en) Filter circuit and multiplexer
JP5613813B2 (en) Duplexer
CN111342789B (en) Filter unit with coupling inductance, filter and electronic equipment
CN110858764B (en) Multiplexer
JP2020028013A (en) Filter and multiplexer
KR102309055B1 (en) Filter and multiplexer
US20210119610A1 (en) Filter device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21914711

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21914711

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 01/12/2023)