WO2022143526A1 - Linear polishing machine - Google Patents

Linear polishing machine Download PDF

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Publication number
WO2022143526A1
WO2022143526A1 PCT/CN2021/141632 CN2021141632W WO2022143526A1 WO 2022143526 A1 WO2022143526 A1 WO 2022143526A1 CN 2021141632 W CN2021141632 W CN 2021141632W WO 2022143526 A1 WO2022143526 A1 WO 2022143526A1
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WO
WIPO (PCT)
Prior art keywords
polishing
linear
pad
polished
polishing machine
Prior art date
Application number
PCT/CN2021/141632
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French (fr)
Chinese (zh)
Inventor
吴孟谕
Original Assignee
广州集成电路技术研究院有限公司
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Publication of WO2022143526A1 publication Critical patent/WO2022143526A1/en

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00Machines or devices using grinding or polishing belts; Accessories therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories

Definitions

  • the invention relates to the technical field of wafer polishing, in particular to a linear polishing machine.
  • CMP Chemical mechanical polishing or planarization
  • One of the chemical mechanical polishing equipment includes a polishing head, a polishing disc, a polishing pad organizer, and a fluid pipeline.
  • the polishing head spins at its center, and the lower end clamps the wafer through a ring (Retaining Ring); a polishing pad is provided on the polishing disc, as shown in Figures 1 and 2.
  • the working process is as follows: the polishing head spins and presses the wafer, the polishing disc drives the polishing pad to spin, and the fluid pipeline injects the polishing liquid, so that the wafer is ground and polished on the polishing pad by chemical and mechanical methods.
  • the pad organizer cleans the pad by its own motion along with deionized water.
  • Another chemical mechanical polishing apparatus includes a polishing head, a polishing disc, a pad organizer, a fluid conduit, and a linear transfer mechanism.
  • the polishing head spins with its center, and the lower end clamps the wafer through the clamping ring; the polishing pad is arranged on the periphery of the linear conveying structure.
  • the above two chemical mechanical polishing apparatuses have the following problems: 1) Both chemical mechanical polishing apparatuses clamp the face-down wafer by the polishing head, and grind the wafer by the rotation of the polishing head. However, in different radii of the wafer, due to the different linear and angular velocities, the grinding speed at the outer edge of the wafer is the largest, and the grinding speed at the center is the smallest, which is likely to cause poor grinding consistency from the center of the wafer to the edge. 2) Both chemical mechanical polishing equipments need to set an air flow channel in the polishing disc, so that during the polishing process, the polishing pad is lifted up by the upward air flow, so that the wafer is in close contact with the polishing pad.
  • the polishing pad organizer cleans the polishing pad by spinning and abutting the polishing pad, the contact area is small, the cleaning efficiency is low, and the cleaning effect consistency is poor.
  • the present invention proposes a linear polishing machine.
  • the invention provides a linear polishing machine, which includes a polishing disc for fixing a workpiece to be polished, a power mechanism located above the polishing disc, and a grinding pad drivingly connected with the power mechanism; the power mechanism is used to drive the grinding pad to make the grinding pad Direct contact and grinding of the part to be polished.
  • the grinding pad is in the shape of an endless belt;
  • the power mechanism includes a plurality of rollers; the plurality of rollers are all penetrated in the grinding pad, and the grinding pad is propped up cooperatively so as to be rotated by the respective rollers.
  • the grinding pad is driven to rotate in a matched manner, so that the workpiece to be polished is linearly polished through the rotation of the grinding pad.
  • the rollers are liftable rollers, which are used to exert downward force on the workpiece to be polished by means of the polishing pad.
  • the power mechanism further comprises a polishing pad organizer abutting against the polishing pad and used for cleaning the polishing pad;
  • the polishing pad organizer spans the polishing pad; the spanning direction of the polishing pad organizer is perpendicular to the driving direction of the polishing pad.
  • the power mechanism further comprises a frame, and a ring member mounted on the frame and used to cover the workpiece to be polished to prevent the workpiece to be polished from sliding.
  • the polishing disc is a horizontally movable mechanism for adjusting the position of the workpiece to be polished.
  • a lifting mechanism for lifting and lowering the workpiece to be polished is installed on the polishing disc.
  • a polishing head is also included; the polishing head includes the power mechanism and a polishing pad;
  • the linear polishing machine also includes an annular track; there are multiple polishing heads, and the multiple polishing heads are respectively directly or indirectly slidably mounted on the annular track;
  • a plurality of polishing discs are arranged, and the plurality of polishing discs are all arranged below the annular track.
  • a polishing head is also included; the polishing head includes the power mechanism and a polishing pad;
  • the linear polishing machine also includes a linear track; there are multiple polishing heads, and the multiple polishing heads are respectively directly or indirectly slidably mounted on the linear track;
  • a plurality of polishing discs are arranged, and the plurality of polishing discs are all arranged below the linear track.
  • the linear polishing machine is provided with at least two linear tracks.
  • the linear polishing machine of the invention can directly reduce the non-uniformity between the center and the edge of the workpiece to be polished, and can meet the high-density requirements of multiple polishing heads through the annular track and the linear track, and the multiple polishing heads can be flexibly arranged.
  • the polishing head can be equipped with hard abrasive pads, soft abrasive pads and brushes respectively to meet the needs of polishing schemes or processes.
  • the linear polishing machine of the present invention can be designed to be smaller than the conventional polishing machine.
  • the linear polishing machine of the invention has novel design and strong practicability.
  • Fig. 1 shows the structural representation of a kind of existing CMP equipment
  • FIG. 2 shows a schematic side view of the conventional CMP apparatus shown in FIG. 1 .
  • FIG. 3 shows a schematic structural diagram of a polishing head and a polishing disc of a linear polishing machine for chemical mechanical polishing (CMP);
  • FIG. 4 shows a schematic structural diagram of the linear polishing machine according to the first preferred embodiment of the present invention
  • FIG. 5 shows a schematic structural diagram of a linear polishing machine according to the second preferred embodiment of the present invention.
  • FIG. 6 shows a reference diagram of the use state of the polishing disk and the wafer robot of the linear polishing machine shown in FIGS. 4 and 5 .
  • FIG. 3 shows a schematic structural diagram of a polishing head and a polishing disc of a linear polishing machine used for chemical mechanical polishing CMP.
  • the linear polishing machine includes a polishing disk 200 for fixing the workpiece 100 to be polished, a power mechanism located above the polishing disk 200, and a polishing pad 330 connected to the power mechanism; the power mechanism is used to drive the polishing pad 330 to make the polishing pad 330 directly contacts and grinds the workpiece 100 to be polished.
  • the object to be polished 100 is a wafer to be polished.
  • the above-mentioned technical solution is a basic solution.
  • the polishing disc 200 is used to fix the workpiece 100 to be polished, and the polishing pad 330 directly contacts and grinds the workpiece 100 to be polished, so that the thickness of the workpiece 100 to be polished can be kept uniform.
  • the linear polishing machine further includes a polishing head 300; the polishing head 300 includes a power mechanism and a polishing pad 330;
  • the grinding pad 330 is in the shape of an endless belt; the power mechanism includes a plurality of rollers 320 that are parallel to each other; the plurality of rollers 320 are all penetrated in the grinding pad 330, and the grinding pad 330 is cooperatively stretched, and is used to cooperate with each other by rotating
  • the polishing pad 330 is driven to rotate, so that the workpiece 100 to be polished is linearly polished through the rotation of the polishing pad 330 .
  • the roller 320 is a roller that can be independently controlled to rise and fall, and is used to exert downward force on the object to be polished 100 through the abrasive pad 330 .
  • the polishing head 300 can be raised and lowered, so that the roller can be raised and lowered.
  • the power mechanism further includes a polishing pad organizer 340 arranged in parallel with the roller 320 and abutting with the polishing pad 330 for cleaning the polishing pad 330 .
  • the polishing pad organizer 340 spans the polishing pad 330 ; the spanning direction of the polishing pad organizer 340 is perpendicular to the driving direction of the polishing pad 330 .
  • the function of the polishing pad organizer 340 is to clean the polishing pad 330. By being perpendicular to the transmission direction of the polishing pad, it has the technical effects of high cleaning efficiency and good consistency.
  • the number of polishing pad organizers 340 may be one or more.
  • polishing pad organizer 340 is a rotating shaft with a cleaning part; the cleaning part is sleeved on the rotating shaft.
  • the power mechanism further includes a frame 360 and a ring member 310 mounted on the frame 360 and used to cover the workpiece 100 to be polished to prevent the workpiece 100 from sliding; a plurality of rollers 320 are respectively rotatably installed on the machine On the frame 360; the polishing pad organizer 340 is rotatably arranged on the frame 360.
  • the polishing disc 200 is a horizontally movable mechanism for adjusting the position of the workpiece 100 to be polished.
  • the fixing method of the workpiece to be polished 100 and the polishing disk 200 may be a suction cup method, or a receiving member may be provided on the polishing disk, and the receiving member includes a groove for accommodating the workpiece to be polished 100 .
  • the linear polishing machine further includes a first guide tube 400 for applying deionized water and/or chemical slurry to the polishing pad 330; wherein the chemical slurry may be abrasive and corrosive; in addition, the first guide There may be multiple tubes 400 .
  • the polishing head 300 further includes a second guide tube 350 mounted on the annular member 310 for applying deionized water to the member to be polished 100 .
  • FIG. 4 shows a schematic structural diagram of a linear polishing machine according to the first preferred embodiment of the present invention.
  • the linear polishing machine further includes an annular track 500; there are multiple polishing heads 300, and the multiple polishing heads 300 are directly or indirectly slidably mounted on the annular track 500 through respective racks 360 (not shown in the figure);
  • a plurality of polishing discs 200 are provided, and the plurality of polishing discs 200 are arranged below the annular track 500;
  • a plurality of polishing heads 300 slide on the annular track 500 respectively, so that the effect of polishing the workpiece 100 to be polished on the same polishing disc 200 by different polishing heads 300 can be achieved.
  • the linear polishing machine further includes a wafer robot 600 for moving the workpiece 100 to be polished.
  • FIG. 5 shows a schematic structural diagram of a linear polishing machine according to the second preferred embodiment of the present invention.
  • the linear polishing machine further includes a linear track 700; there are multiple polishing heads 300, and the multiple polishing heads 300 are directly or indirectly slidably mounted on the linear track 700 through their respective racks 360 (not shown in the figure);
  • a plurality of polishing discs 200 are provided, and the plurality of polishing discs 200 are arranged below the linear track 700;
  • a plurality of polishing heads 300 slide on the linear track 700 respectively, so that the effect of polishing the workpiece 100 to be polished on the same polishing disc 200 by different polishing heads 300 can be achieved.
  • the linear polishing machine includes a plurality of polishing heads 300
  • the polishing pads 330 can be of different types to meet the requirements of polishing and improve the processing capacity and efficiency of the equipment.
  • the linear polishing machine further includes a wafer robot 600 for moving the workpiece 100 to be polished.
  • a lifting mechanism 210 for lifting and lowering the workpiece 100 to be polished is installed on the polishing disc 200 .
  • the lift mechanism 210 includes a retractable support that can be embedded in the polishing disc 200 . When the wafer is fixed, the retractable support is retracted downward so that the backside of the wafer abuts the polishing pad 200 . When the wafer is removed, the retractable support extends upward to keep the wafer away from the polishing pad 200 for removal by the wafer robot 600 .
  • the machine of the chemical mechanical polishing equipment occupies an excessively large area, and the two chemical mechanical polishing equipment described in the background art need to ensure that the radius of the polishing disc and the grinding pad is much larger than the radius of the wafer, so that the Grinding effect can be achieved.
  • the technical solution of the present invention by fixing the workpiece 100 to be polished and the moving grinding pad 330, it is only necessary to ensure that the polishing disc can provide a support solution to fix the wafer, that is, this solution greatly reduces the occupied area of the polishing disc and saves space .
  • the linear polishing machine of the present invention can directly reduce the non-uniformity between the center and the edge of the workpiece to be polished, and can meet the high-density requirements of multiple polishing heads through the annular track and the linear track, and the multiple polishing heads can be flexibly arranged.
  • the polishing head can be equipped with hard abrasive pads, soft abrasive pads and brushes respectively to meet the needs of polishing schemes or processes.
  • the linear polishing machine of the present invention can be designed to be smaller than the conventional polishing machine.
  • the linear polishing machine of the invention has novel design and strong practicability.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A linear polishing machine, comprising: a polishing disc (200) for fixing a member (100) to be polished, a power mechanism located above the polishing disc (200), and a grinding pad (330) in transmission connection with the power mechanism; wherein the power mechanism is used for driving the grinding pad (330), so that the grinding pad (330) directly contacts and grinds said member (100). The linear polishing machine of the present invention has a novel design and high practicability.

Description

一种线性抛光机A linear polishing machine 技术领域technical field
本发明涉及晶圆抛光技术领域,尤其涉及一种线性抛光机。The invention relates to the technical field of wafer polishing, in particular to a linear polishing machine.
背景技术Background technique
化学机械抛光或平面化(CMP)是一种结合化学和机械力、用于表面平面化的过程。在CMP工艺中,配合研磨垫和环形件,使用了具有研磨性和腐蚀性的化学浆料;其中,研磨垫的直径通常大于待抛光件。Chemical mechanical polishing or planarization (CMP) is a process that combines chemical and mechanical forces for surface planarization. In the CMP process, an abrasive and corrosive chemical slurry is used in conjunction with the polishing pad and the ring; wherein, the diameter of the polishing pad is usually larger than that of the workpiece to be polished.
现有的化学机械抛光设备主要有两种,其中一种化学机械抛光设备包括抛光头、抛光盘、研磨垫整理器、流体管道。抛光头以其中心自旋,下端通过环形件(Retaining Ring)夹持晶圆;抛光盘上设有研磨垫,如图1和图2所示。工作过程为:抛光头自旋并下压晶圆,抛光盘带动研磨垫自旋,流体管道注入抛光液,以使晶圆在研磨垫上通过化学和机械两种方式进行研磨抛光。同时,研磨垫整理器通过其自身的运动以及去离子水清洗研磨垫。另一种化学机械抛光设备包括抛光头、抛光盘、研磨垫整理器、流体管道和线性传送机构。抛光头以其中心自旋,下端通过夹持环夹持晶圆;研磨垫设置在线性传送结构的外围。There are two main types of existing chemical mechanical polishing equipment. One of the chemical mechanical polishing equipment includes a polishing head, a polishing disc, a polishing pad organizer, and a fluid pipeline. The polishing head spins at its center, and the lower end clamps the wafer through a ring (Retaining Ring); a polishing pad is provided on the polishing disc, as shown in Figures 1 and 2. The working process is as follows: the polishing head spins and presses the wafer, the polishing disc drives the polishing pad to spin, and the fluid pipeline injects the polishing liquid, so that the wafer is ground and polished on the polishing pad by chemical and mechanical methods. At the same time, the pad organizer cleans the pad by its own motion along with deionized water. Another chemical mechanical polishing apparatus includes a polishing head, a polishing disc, a pad organizer, a fluid conduit, and a linear transfer mechanism. The polishing head spins with its center, and the lower end clamps the wafer through the clamping ring; the polishing pad is arranged on the periphery of the linear conveying structure.
技术问题technical problem
上述两种化学机械抛光设备均存在以下问题:1)两种化学机械抛光设备都是通过抛光头夹持正面朝下的晶圆,通过抛光头的旋转研磨晶圆。但是,在晶圆的不同半径区域中,由于线速度和角速度不同,晶圆外边缘的研磨速度最大,中心处研磨速度最小,容易造成晶圆中心处到边缘处的研磨一致性较差。2)两种化学机械抛光设备均需要在抛光盘中设置气流通道,以便在研磨过程中,通过向上的气流促使研磨垫向上抬动,以便晶圆与研磨垫紧密接触。但是,由于气流作用与研磨垫的向上压力难以保证一致性,晶圆和研磨垫并非完美接触,同样造成晶圆表面研磨一致性效果较差。3)在两种化学机械抛光设备中,研磨垫整理器通过自旋和抵接研磨垫进行研磨垫清理,接触面积小,清理效率低,且清理效果一致性差。The above two chemical mechanical polishing apparatuses have the following problems: 1) Both chemical mechanical polishing apparatuses clamp the face-down wafer by the polishing head, and grind the wafer by the rotation of the polishing head. However, in different radii of the wafer, due to the different linear and angular velocities, the grinding speed at the outer edge of the wafer is the largest, and the grinding speed at the center is the smallest, which is likely to cause poor grinding consistency from the center of the wafer to the edge. 2) Both chemical mechanical polishing equipments need to set an air flow channel in the polishing disc, so that during the polishing process, the polishing pad is lifted up by the upward air flow, so that the wafer is in close contact with the polishing pad. However, due to the air flow and the upward pressure of the polishing pad, it is difficult to ensure the consistency, and the wafer and the polishing pad are not in perfect contact, which also results in poor polishing consistency on the wafer surface. 3) In the two chemical mechanical polishing equipments, the polishing pad organizer cleans the polishing pad by spinning and abutting the polishing pad, the contact area is small, the cleaning efficiency is low, and the cleaning effect consistency is poor.
技术解决方案technical solutions
本发明针对上述技术问题,提出了一种线性抛光机。Aiming at the above technical problems, the present invention proposes a linear polishing machine.
本发明提出以下技术方案:The present invention proposes the following technical solutions:
本发明提出了一种线性抛光机,包括用于固定待抛光件的抛光盘、位于抛光盘上方的动力机构以及与动力机构传动连接的研磨垫;动力机构用于驱动研磨垫,以使研磨垫直接接触并研磨待抛光件。The invention provides a linear polishing machine, which includes a polishing disc for fixing a workpiece to be polished, a power mechanism located above the polishing disc, and a grinding pad drivingly connected with the power mechanism; the power mechanism is used to drive the grinding pad to make the grinding pad Direct contact and grinding of the part to be polished.
本发明上述的线性抛光机中,研磨垫呈环形带状;动力机构包括多个辊子;所述多个辊子均穿设在研磨垫中,配合地将该研磨垫撑开,用于通过各自转动配合地带动研磨垫转动,从而通过研磨垫的转动对待抛光件进行线性抛光。In the above-mentioned linear polishing machine of the present invention, the grinding pad is in the shape of an endless belt; the power mechanism includes a plurality of rollers; the plurality of rollers are all penetrated in the grinding pad, and the grinding pad is propped up cooperatively so as to be rotated by the respective rollers. The grinding pad is driven to rotate in a matched manner, so that the workpiece to be polished is linearly polished through the rotation of the grinding pad.
本发明上述的线性抛光机中,所述辊子为可升降辊子,用于借由研磨垫对待抛光件向下施加作用力。In the above-mentioned linear polishing machine of the present invention, the rollers are liftable rollers, which are used to exert downward force on the workpiece to be polished by means of the polishing pad.
本发明上述的线性抛光机中,动力机构还包括与研磨垫抵接、用于清理研磨垫的研磨垫整理器;In the above-mentioned linear polishing machine of the present invention, the power mechanism further comprises a polishing pad organizer abutting against the polishing pad and used for cleaning the polishing pad;
研磨垫整理器横跨研磨垫;研磨垫整理器的横跨方向与研磨垫的传动方向垂直。The polishing pad organizer spans the polishing pad; the spanning direction of the polishing pad organizer is perpendicular to the driving direction of the polishing pad.
本发明上述的线性抛光机中,动力机构还包括机架,以及安装在机架上、用于罩住待抛光件以防止待抛光件滑动的环形件。In the above-mentioned linear polishing machine of the present invention, the power mechanism further comprises a frame, and a ring member mounted on the frame and used to cover the workpiece to be polished to prevent the workpiece to be polished from sliding.
本发明上述的线性抛光机中,抛光盘为可水平运动机构,用于调整待抛光件的位置。In the above-mentioned linear polishing machine of the present invention, the polishing disc is a horizontally movable mechanism for adjusting the position of the workpiece to be polished.
本发明上述的线性抛光机中,抛光盘上安装有用于升降待抛光件的升降机构。In the above-mentioned linear polishing machine of the present invention, a lifting mechanism for lifting and lowering the workpiece to be polished is installed on the polishing disc.
本发明上述的线性抛光机中,还包括抛光头;所述抛光头包括所述动力机构和研磨垫;In the above-mentioned linear polishing machine of the present invention, a polishing head is also included; the polishing head includes the power mechanism and a polishing pad;
线性抛光机还包括环形轨道;抛光头有多个,多个抛光头分别直接或间接可滑动地安装在环形轨道上;The linear polishing machine also includes an annular track; there are multiple polishing heads, and the multiple polishing heads are respectively directly or indirectly slidably mounted on the annular track;
抛光盘设置有多个,多个抛光盘均设置在环形轨道的下方。A plurality of polishing discs are arranged, and the plurality of polishing discs are all arranged below the annular track.
本发明上述的线性抛光机中,还包括抛光头;所述抛光头包括所述动力机构和研磨垫;In the above-mentioned linear polishing machine of the present invention, a polishing head is also included; the polishing head includes the power mechanism and a polishing pad;
线性抛光机还包括直线轨道;抛光头有多个,多个抛光头分别直接或间接可滑动地安装在直线轨道上;The linear polishing machine also includes a linear track; there are multiple polishing heads, and the multiple polishing heads are respectively directly or indirectly slidably mounted on the linear track;
抛光盘设置有多个,多个抛光盘均设置在直线轨道的下方。A plurality of polishing discs are arranged, and the plurality of polishing discs are all arranged below the linear track.
本发明上述的线性抛光机中,所述线性抛光机设有至少两条直线轨道。In the above-mentioned linear polishing machine of the present invention, the linear polishing machine is provided with at least two linear tracks.
有益效果beneficial effect
本发明的线性抛光机可直接减小待抛光件中心和边缘之间的不均匀性,通过环形轨道和直线轨道可满足多台抛光头的高通度要求,多台抛光头可进行灵活排列,不同抛光头可分别配置硬研磨垫、软研磨垫以及刷,从而满足抛光方案或工艺的需要。同时,本发明的线性抛光机相比于传统抛光机可以设计地更小。本发明的线性抛光机设计新颖,实用性强。The linear polishing machine of the invention can directly reduce the non-uniformity between the center and the edge of the workpiece to be polished, and can meet the high-density requirements of multiple polishing heads through the annular track and the linear track, and the multiple polishing heads can be flexibly arranged. The polishing head can be equipped with hard abrasive pads, soft abrasive pads and brushes respectively to meet the needs of polishing schemes or processes. At the same time, the linear polishing machine of the present invention can be designed to be smaller than the conventional polishing machine. The linear polishing machine of the invention has novel design and strong practicability.
附图说明Description of drawings
下面结合附图对本发明进一步说明:Below in conjunction with accompanying drawing, the present invention is further described:
图1示出了一种现有CMP设备的结构示意图;Fig. 1 shows the structural representation of a kind of existing CMP equipment;
图2示出了图1所示的现有CMP设备的侧面示意图。FIG. 2 shows a schematic side view of the conventional CMP apparatus shown in FIG. 1 .
图3示出了一种用于化学机械抛光(CMP)的线性抛光机的抛光头和抛光盘的结构示意图;FIG. 3 shows a schematic structural diagram of a polishing head and a polishing disc of a linear polishing machine for chemical mechanical polishing (CMP);
图4示出了本发明第一优选实施例的线性抛光机的结构示意图;FIG. 4 shows a schematic structural diagram of the linear polishing machine according to the first preferred embodiment of the present invention;
图5示出了本发明第二优选实施例的线性抛光机的结构示意图;FIG. 5 shows a schematic structural diagram of a linear polishing machine according to the second preferred embodiment of the present invention;
图6示出了图4和图5中所示的线性抛光机的抛光盘和晶圆机器人的使用状态参考图。FIG. 6 shows a reference diagram of the use state of the polishing disk and the wafer robot of the linear polishing machine shown in FIGS. 4 and 5 .
具体实施方式Detailed ways
为了使得发明的技术方案、技术目的以及技术效果更为清楚,以使得本领域技术人员能够理解和实施本发明,下面将结合附图及具体实施例对本发明做进一步详细的描述。In order to make the technical solution, technical purpose and technical effect of the invention clearer, so that those skilled in the art can understand and implement the present invention, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments.
如图3所示,图3示出了一种用于化学机械抛光CMP的线性抛光机的抛光头和抛光盘的结构示意图。该线性抛光机,包括用于固定待抛光件100的抛光盘200、位于抛光盘200上方的动力机构以及与动力机构传动连接的研磨垫330;动力机构用于驱动研磨垫330,以使研磨垫330直接接触并研磨待抛光件100。As shown in FIG. 3 , FIG. 3 shows a schematic structural diagram of a polishing head and a polishing disc of a linear polishing machine used for chemical mechanical polishing CMP. The linear polishing machine includes a polishing disk 200 for fixing the workpiece 100 to be polished, a power mechanism located above the polishing disk 200, and a polishing pad 330 connected to the power mechanism; the power mechanism is used to drive the polishing pad 330 to make the polishing pad 330 directly contacts and grinds the workpiece 100 to be polished.
在本实施例中,待抛光件100为待抛光的晶圆。In this embodiment, the object to be polished 100 is a wafer to be polished.
上述技术方案为基础方案,通过抛光盘200固定待抛光件100,并通过研磨垫330直接接触并研磨待抛光件100,从而可以使待抛光件100厚度保持一定的均匀性。The above-mentioned technical solution is a basic solution. The polishing disc 200 is used to fix the workpiece 100 to be polished, and the polishing pad 330 directly contacts and grinds the workpiece 100 to be polished, so that the thickness of the workpiece 100 to be polished can be kept uniform.
进一步地,线性抛光机包括还包括抛光头300;抛光头300包括动力机构和研磨垫330;Further, the linear polishing machine further includes a polishing head 300; the polishing head 300 includes a power mechanism and a polishing pad 330;
研磨垫330呈环形带状;动力机构包括互相平行的多个辊子320;所述多个辊子320均穿设在研磨垫330中,配合地将该研磨垫330撑开,用于通过各自转动配合地带动研磨垫330转动,从而通过研磨垫330的转动对待抛光件100进行线性抛光。The grinding pad 330 is in the shape of an endless belt; the power mechanism includes a plurality of rollers 320 that are parallel to each other; the plurality of rollers 320 are all penetrated in the grinding pad 330, and the grinding pad 330 is cooperatively stretched, and is used to cooperate with each other by rotating The polishing pad 330 is driven to rotate, so that the workpiece 100 to be polished is linearly polished through the rotation of the polishing pad 330 .
其中,所述辊子320为可独立控制升降的辊子,用于借由研磨垫330对待抛光件100向下施加作用力。在本实施例中,抛光头300可升降,实现辊子可升降。Wherein, the roller 320 is a roller that can be independently controlled to rise and fall, and is used to exert downward force on the object to be polished 100 through the abrasive pad 330 . In this embodiment, the polishing head 300 can be raised and lowered, so that the roller can be raised and lowered.
进一步地,动力机构还包括与辊子320平行设置并与研磨垫330抵接、用于清理研磨垫330的研磨垫整理器340。研磨垫整理器340横跨研磨垫330;研磨垫整理器340的横跨方向与研磨垫330的传动方向垂直。研磨垫整理器340的作用为清理研磨垫330,通过与研磨垫的传动方向垂直,具有清理效率高,一致性好的技术效果。优选地,在本实施例中,研磨垫整理器340的数量可以为一个或多个。Further, the power mechanism further includes a polishing pad organizer 340 arranged in parallel with the roller 320 and abutting with the polishing pad 330 for cleaning the polishing pad 330 . The polishing pad organizer 340 spans the polishing pad 330 ; the spanning direction of the polishing pad organizer 340 is perpendicular to the driving direction of the polishing pad 330 . The function of the polishing pad organizer 340 is to clean the polishing pad 330. By being perpendicular to the transmission direction of the polishing pad, it has the technical effects of high cleaning efficiency and good consistency. Preferably, in this embodiment, the number of polishing pad organizers 340 may be one or more.
进一步地,研磨垫整理器340为带有清洁部的转轴;清洁部套设在转轴上。Further, the polishing pad organizer 340 is a rotating shaft with a cleaning part; the cleaning part is sleeved on the rotating shaft.
进一步地,动力机构还包括机架360,以及安装在机架360上、用于罩住待抛光件100以防止待抛光件100滑动的环形件310;多个辊子320分别可转动地安装在机架360上;研磨垫整理器340可转动地设置在机架360上。Further, the power mechanism further includes a frame 360 and a ring member 310 mounted on the frame 360 and used to cover the workpiece 100 to be polished to prevent the workpiece 100 from sliding; a plurality of rollers 320 are respectively rotatably installed on the machine On the frame 360; the polishing pad organizer 340 is rotatably arranged on the frame 360.
进一步地,抛光盘200为可水平运动机构,用于调整待抛光件100的位置。在这里,待抛光件100和抛光盘200的固定方式,可以采用吸盘方式,也可以在抛光盘上设置容纳件,所述容纳件包括用于容纳待抛光件100的凹槽。Further, the polishing disc 200 is a horizontally movable mechanism for adjusting the position of the workpiece 100 to be polished. Here, the fixing method of the workpiece to be polished 100 and the polishing disk 200 may be a suction cup method, or a receiving member may be provided on the polishing disk, and the receiving member includes a groove for accommodating the workpiece to be polished 100 .
进一步地,线性抛光机还包括用于向研磨垫330上施加去离子水和/或化学浆料的第一引导管400;其中,化学浆料可具有研磨性和腐蚀性;此外,第一引导管400可以有多个。Further, the linear polishing machine further includes a first guide tube 400 for applying deionized water and/or chemical slurry to the polishing pad 330; wherein the chemical slurry may be abrasive and corrosive; in addition, the first guide There may be multiple tubes 400 .
进一步地,抛光头300还包括安装在环形件310上,用于向待抛光件100上施加去离子水的第二引导管350。Further, the polishing head 300 further includes a second guide tube 350 mounted on the annular member 310 for applying deionized water to the member to be polished 100 .
如图4所示,图4示出了本发明第一优选实施例的线性抛光机的结构示意图。线性抛光机还包括环形轨道500;抛光头300有多个,多个抛光头300通过各自的机架360(图中未示出)直接或间接可滑动地安装在环形轨道500上;As shown in FIG. 4 , FIG. 4 shows a schematic structural diagram of a linear polishing machine according to the first preferred embodiment of the present invention. The linear polishing machine further includes an annular track 500; there are multiple polishing heads 300, and the multiple polishing heads 300 are directly or indirectly slidably mounted on the annular track 500 through respective racks 360 (not shown in the figure);
抛光盘200设置有多个,多个抛光盘200均设置在环形轨道500的下方;A plurality of polishing discs 200 are provided, and the plurality of polishing discs 200 are arranged below the annular track 500;
在图4中,多个抛光头300分别在环形轨道500上滑动,从而可实现不同的抛光头300对同一个抛光盘200上的待抛光件100进行抛光的效果。In FIG. 4 , a plurality of polishing heads 300 slide on the annular track 500 respectively, so that the effect of polishing the workpiece 100 to be polished on the same polishing disc 200 by different polishing heads 300 can be achieved.
进一步地,在本实施例中,线性抛光机还包括用于移动待抛光件100的晶圆机器人600。Further, in this embodiment, the linear polishing machine further includes a wafer robot 600 for moving the workpiece 100 to be polished.
如图5所示,图5示出了本发明第二优选实施例的线性抛光机的结构示意图。线性抛光机还包括直线轨道700;抛光头300有多个,多个抛光头300通过各自的机架360(图中未示出)直接或间接可滑动地安装在直线轨道700上;As shown in FIG. 5 , FIG. 5 shows a schematic structural diagram of a linear polishing machine according to the second preferred embodiment of the present invention. The linear polishing machine further includes a linear track 700; there are multiple polishing heads 300, and the multiple polishing heads 300 are directly or indirectly slidably mounted on the linear track 700 through their respective racks 360 (not shown in the figure);
抛光盘200设置有多个,多个抛光盘200均设置在直线轨道700的下方;A plurality of polishing discs 200 are provided, and the plurality of polishing discs 200 are arranged below the linear track 700;
在图5中,多个抛光头300分别在直线轨道700上滑动,从而可实现不同的抛光头300对同一个抛光盘200上的待抛光件100进行抛光的效果。In FIG. 5 , a plurality of polishing heads 300 slide on the linear track 700 respectively, so that the effect of polishing the workpiece 100 to be polished on the same polishing disc 200 by different polishing heads 300 can be achieved.
在现有技术方案中,采用多个抛光头组合的化学机械抛光设备经常出现因其中一个抛光头故障导致整机停产的事故,为了避免这种事故,直线轨道700可以有两条,防止某个抛光头出现宕机导致停产。可以理解,直线轨道(700)可以多于两条。In the prior art solution, the chemical mechanical polishing equipment using a combination of multiple polishing heads often has an accident that the whole machine is shut down due to the failure of one of the polishing heads. A downtime in the polishing head resulted in a production stoppage. It will be appreciated that there may be more than two linear tracks (700).
一般而言,现有技术中单个晶圆需要经过多种抛光工序,即采用不同研磨垫330,更换麻烦且耗时。在线性抛光机包括多个抛光头300的情形下,研磨垫330可以为不同类型,以满足研磨的需求,提高设备的处理能力和效率。Generally speaking, in the prior art, a single wafer needs to undergo various polishing processes, that is, using different polishing pads 330 , which is troublesome and time-consuming to replace. In the case where the linear polishing machine includes a plurality of polishing heads 300, the polishing pads 330 can be of different types to meet the requirements of polishing and improve the processing capacity and efficiency of the equipment.
在本实施例中,线性抛光机还包括用于移动待抛光件100的晶圆机器人600。In this embodiment, the linear polishing machine further includes a wafer robot 600 for moving the workpiece 100 to be polished.
进一步地,如图6所示,在本实施例中,进一步地,抛光盘200上安装有用于升降待抛光件100的升降机构210。升降机构210包括可内嵌在抛光盘200中的可伸缩支撑件。当固定晶圆时,可伸缩支撑件向下回缩,使晶圆背面抵接抛光盘200。当移出晶圆时,可伸缩支撑件向上伸出,使晶圆远离抛光盘200,以便晶圆机器人600移出。Further, as shown in FIG. 6 , in this embodiment, further, a lifting mechanism 210 for lifting and lowering the workpiece 100 to be polished is installed on the polishing disc 200 . The lift mechanism 210 includes a retractable support that can be embedded in the polishing disc 200 . When the wafer is fixed, the retractable support is retracted downward so that the backside of the wafer abuts the polishing pad 200 . When the wafer is removed, the retractable support extends upward to keep the wafer away from the polishing pad 200 for removal by the wafer robot 600 .
另外,在现有技术中,化学机械抛光设备的机台占地面积过大,背景技术中所述的两种化学机械抛光设备均需要保证抛光盘和研磨垫的半径远大于晶圆半径,方可实现研磨效果。而采用本发明的技术方案,通过固定待抛光件100和移动研磨垫330的方式,只需要保证抛光盘能够提供支撑方案固定晶圆即可,即本方案大大减少抛光盘的占用面积,节省空间。本发明的线性抛光机可直接减小待抛光件中心和边缘之间的不均匀性,通过环形轨道和直线轨道可满足多台抛光头的高通度要求,多台抛光头可进行灵活排列,不同抛光头可分别配置硬研磨垫、软研磨垫以及刷,从而满足抛光方案或工艺的需要。同时,本发明的线性抛光机相比于传统抛光机可以设计地更小。本发明的线性抛光机设计新颖,实用性强。In addition, in the prior art, the machine of the chemical mechanical polishing equipment occupies an excessively large area, and the two chemical mechanical polishing equipment described in the background art need to ensure that the radius of the polishing disc and the grinding pad is much larger than the radius of the wafer, so that the Grinding effect can be achieved. With the technical solution of the present invention, by fixing the workpiece 100 to be polished and the moving grinding pad 330, it is only necessary to ensure that the polishing disc can provide a support solution to fix the wafer, that is, this solution greatly reduces the occupied area of the polishing disc and saves space . The linear polishing machine of the present invention can directly reduce the non-uniformity between the center and the edge of the workpiece to be polished, and can meet the high-density requirements of multiple polishing heads through the annular track and the linear track, and the multiple polishing heads can be flexibly arranged. The polishing head can be equipped with hard abrasive pads, soft abrasive pads and brushes respectively to meet the needs of polishing schemes or processes. At the same time, the linear polishing machine of the present invention can be designed to be smaller than the conventional polishing machine. The linear polishing machine of the invention has novel design and strong practicability.
上面结合附图对本发明的实施例进行了描述,但是本发明并不局限于上述的具体实施方式,上述的具体实施方式仅仅是示意性的,而不是限制性的,本领域的普通技术人员在本发明的启示下,在不脱离本发明宗旨和权利要求所保护的范围情况下,还可做出很多形式,这些均属于本发明的保护之内。The embodiments of the present invention have been described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific embodiments, which are merely illustrative rather than restrictive. Under the inspiration of the present invention, without departing from the scope of protection of the present invention and the claims, many forms can be made, which all belong to the protection of the present invention.

Claims (10)

  1. 一种线性抛光机,其特征在于,包括用于固定待抛光件(100)的抛光盘(200)、位于抛光盘(200)上方的动力机构以及与动力机构传动连接的研磨垫(330);动力机构用于驱动研磨垫(330),以使研磨垫(330)直接接触并研磨待抛光件(100)。 A linear polishing machine, characterized in that it comprises a polishing disc (200) for fixing a workpiece (100) to be polished, a power mechanism located above the polishing disc (200), and a grinding pad (330) drivingly connected with the power mechanism; The power mechanism is used for driving the polishing pad (330), so that the polishing pad (330) directly contacts and grinds the workpiece (100) to be polished.
  2. 根据权利要求1所述的线性抛光机,其特征在于,研磨垫(330)呈环形带状;动力机构包括多个辊子(320);所述多个辊子(320)均穿设在研磨垫(330)中,配合地将该研磨垫(330)撑开,用于通过各自转动配合地带动研磨垫(330)转动,从而通过研磨垫(330)的转动对待抛光件(100)进行线性抛光。 The linear polishing machine according to claim 1, characterized in that, the grinding pad (330) is in the shape of an endless belt; the power mechanism comprises a plurality of rollers (320); 330), the grinding pad (330) is propped up cooperatively, so as to drive the grinding pad (330) to rotate through the respective rotation, so that the workpiece (100) to be polished is linearly polished by the rotation of the grinding pad (330).
  3. 根据权利要求2所述的线性抛光机,其特征在于,所述辊子(320)为可升降辊子,用于借由研磨垫(330)对待抛光件(100)向下施加作用力。 The linear polishing machine according to claim 2, characterized in that, the roller (320) is a liftable roller, and is used for exerting downward force on the object to be polished (100) by the abrasive pad (330).
  4. 根据权利要求1~3中任意一项所述的线性抛光机,其特征在于,动力机构还包括与研磨垫(330)抵接、用于清理研磨垫(330)的研磨垫整理器(340); The linear polishing machine according to any one of claims 1 to 3, wherein the power mechanism further comprises a polishing pad organizer (340) abutting against the polishing pad (330) and used for cleaning the polishing pad (330). ;
    研磨垫整理器(340)横跨研磨垫(330);研磨垫整理器(340)的横跨方向与研磨垫(330)的传动方向垂直。The polishing pad organizer (340) spans the polishing pad (330); the spanning direction of the polishing pad organizer (340) is perpendicular to the driving direction of the polishing pad (330).
  5. 根据权利要求1~3中任意一项所述的线性抛光机,其特征在于,动力机构还包括机架(360),以及安装在机架(360)上、用于罩住待抛光件(100)以防止待抛光件(100)滑动的环形件(310)。 The linear polishing machine according to any one of claims 1 to 3, wherein the power mechanism further comprises a frame (360), and is mounted on the frame (360) and used to cover the workpiece (100 to be polished) ) to prevent the sliding of the to-be-polished (100) ring (310).
  6. 根据权利要求1~3中任意一项所述的线性抛光机,其特征在于,抛光盘(200)为可水平运动机构,用于调整待抛光件(100)的位置。 The linear polishing machine according to any one of claims 1 to 3, characterized in that, the polishing disc (200) is a horizontally movable mechanism for adjusting the position of the workpiece (100) to be polished.
  7. 根据权利要求1~3中任意一项所述的线性抛光机,其特征在于,抛光盘(200)上安装有用于升降待抛光件(100)的升降机构(210)。The linear polishing machine according to any one of claims 1 to 3, characterized in that, a lifting mechanism (210) for lifting and lowering the workpiece (100) to be polished is installed on the polishing disc (200).
  8. 根据权利要求1~3中任意一项所述的线性抛光机,其特征在于,还包括抛光头(300);所述抛光头(300)包括所述动力机构和研磨垫(330); The linear polishing machine according to any one of claims 1 to 3, further comprising a polishing head (300); the polishing head (300) comprising the power mechanism and a grinding pad (330);
    线性抛光机还包括环形轨道(500);抛光头(300)有多个,多个抛光头(300)分别直接或间接可滑动地安装在环形轨道(500)上;The linear polishing machine further comprises an annular track (500); there are a plurality of polishing heads (300), and the plurality of polishing heads (300) are respectively directly or indirectly slidably mounted on the annular track (500);
    抛光盘(200)设置有多个,多个抛光盘(200)均设置在环形轨道(500)的下方。A plurality of polishing discs (200) are provided, and the plurality of polishing discs (200) are all arranged below the annular track (500).
  9. 根据权利要求1~3中任意一项所述的线性抛光机,其特征在于,还包括抛光头(300);所述抛光头(300)包括所述动力机构和研磨垫(330); The linear polishing machine according to any one of claims 1 to 3, further comprising a polishing head (300); the polishing head (300) comprising the power mechanism and a grinding pad (330);
    线性抛光机还包括直线轨道(700);抛光头(300)有多个,多个抛光头(300)分别直接或间接可滑动地安装在直线轨道(700)上;The linear polishing machine further includes a linear track (700); there are multiple polishing heads (300), and the multiple polishing heads (300) are respectively directly or indirectly slidably mounted on the linear track (700);
    抛光盘(200)设置有多个,多个抛光盘(200)均设置在直线轨道(700)的下方。A plurality of polishing discs (200) are provided, and the plurality of polishing discs (200) are all arranged below the linear track (700).
  10. 根据权利要求9所述的线性抛光机,其特征在于,所述线性抛光机设有至少两条直线轨道(700)。 The linear polishing machine according to claim 9, characterized in that, the linear polishing machine is provided with at least two linear tracks (700).
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