WO2022143504A1

WO2022143504A1 - Radio frequency amplifier

Info

Publication number: WO2022143504A1
Application number: PCT/CN2021/141539
Authority: WO
Inventors: 杨茂清
Original assignee: 华为技术有限公司
Priority date: 2020-12-30
Filing date: 2021-12-27
Publication date: 2022-07-07
Also published as: CN114695332A

Abstract

The embodiments of the present application disclose a radio frequency amplifier for amplifying a radio frequency signal. The radio frequency amplifier in the embodiments of the present application comprises: an input module, configured to receive a first radio frequency signal; a die, configured to amplify the first radio frequency signal to obtain a second radio frequency signal; an output module, configured to output the second radio frequency signal; a lead frame, configured to bear an input pin and an output pin, the lead frame being a printed circuit board; and a first capacitor, configured to filter the second radio frequency signal, wherein the output module comprises a first metal frame layer, the output pin is located in the first metal frame layer, and the output pin is connected to the die by means of a first bonding wire, the length of the first bonding wire being less than a preset threshold, and the first capacitor and the first metal frame layer are connected by means of a second bonding wire. In the embodiments of the present application, the radio frequency amplifier enables the equivalent inductance to be relatively small, which ensures the performance of the video bandwidth (VBW), thereby improving the performance of the bandwidth.

Description

a radio frequency amplifier

This application claims the priority of the Chinese patent application with the application number 202011628114.2 and the invention titled "A Radio Frequency Amplifier" filed with the China Patent Office on December 30, 2020, the entire contents of which are incorporated into this application by reference.

technical field

The embodiments of the present application relate to the field of communication technologies, and in particular, to a radio frequency amplifier.

Background technique

RF power tube packaging refers to the assembly of a die (bare die) with RF power amplification function and other circuit components into a specific carrier to form a complete device.

Among the common RF power tube packages, the most common is the ceramic package, which is characterized by the use of ceramic materials to make a lead frame, and a first-level low-pass matching network is formed through the bonding wires and the die. And internally matched SLC capacitors parallel to the die and output pins, where the bond wire set is perpendicular to the long sides of the die and capacitors.

The bonding wire between the SLC capacitor and the output pin is too long, resulting in a larger equivalent inductance ld1 of the bonding wire, and the parallel resonance frequency of the parasitic capacitance Cds decreases, resulting in a degradation of the video bandwidth VBW performance, thus affecting the bandwidth. performance.

SUMMARY OF THE INVENTION

An embodiment of the present application provides a radio frequency amplifier. The radio frequency amplifier is made of a printed circuit board (PCB) material, so output pins can be set at the edge of the metal layer of the first frame, so it is used to connect the output pins and the die The first bonding wire is relatively short, so the equivalent inductance is small, which ensures the performance of the video bandwidth VBW, thereby improving the performance of the bandwidth.

A first aspect of the embodiments of the present application provides a radio frequency amplifier including:

an input module for receiving a first radio frequency signal, a die for amplifying the first radio frequency signal to obtain a second radio frequency signal, an output module for outputting a second radio frequency signal, a lead frame, the lead frame for carrying the input pins and output pins, the input pin is used to transmit the first radio frequency signal, the output pin is used to transmit the second radio frequency signal, the lead frame is a printed circuit board, the first capacitor, the first capacitor is used to transmit the second radio frequency signal The signal is filtered, the flange is used for conducting electricity, the output module includes a first frame metal layer, the output pins are located in the first frame metal layer, the output pins and the die are connected by a first bonding wire, and the first bonding wire The length of the first capacitor is less than a preset threshold, and the first capacitor and the first frame metal layer are connected by a second bonding wire.

In the embodiment of the present application, the RF amplifier is made of a PCB to form a lead frame, which has a lower cost than a lead frame made of ceramics. By reducing the length of the first bonding wire, matching within the RF amplifier can be achieved without reducing the VBW performance.

Based on the radio frequency amplifier of the first aspect, in a possible implementation manner, the first capacitor is located on the flange.

In the embodiment of the present application, the first capacitor is located on the flange, which improves the feasibility of the solution.

Based on the radio frequency amplifier of the first aspect, in a possible implementation manner, the radio frequency amplifier further includes: a second capacitor, the second capacitor is used to filter the second radio frequency signal, and the second capacitor and the first capacitor are located at the output pin On both sides of the , the second capacitor is located on the flange.

In the embodiment of the present application, the second capacitor is also located on the flange, which improves the feasibility of the solution.

Based on the radio frequency amplifier of the first aspect, in a possible implementation manner, the first capacitor is located on the lead frame, and the first capacitor and the lead frame are firmly connected.

In the embodiment of the present application, the first capacitor is located on the lead frame, which improves the feasibility of the solution.

Based on the radio frequency amplifier of the first aspect, in a possible implementation manner, the radio frequency amplifier further includes: a second capacitor, the second capacitor is used to filter the second radio frequency signal, the second capacitor is located on the lead frame, and the second capacitor is located on the lead frame. and the frame metal layer are connected by a third bonding wire.

In the embodiment of the present application, the second capacitor is also located on the lead frame, which improves the feasibility of the solution.

Based on the radio frequency amplifier of the first aspect, in a possible implementation manner, the bottoms of the first capacitor and the second capacitor are in contact with the flange through a via hole, the flange is grounded, and the first capacitor and the second capacitor are grounded in parallel.

In the embodiment of the present application, the first capacitor and the second capacitor are in contact with the flange through the via hole, so as to realize the parallel connection of grounding, which improves the practicability of the solution.

Based on the radio frequency amplifier of the first aspect, in a possible implementation manner, the bottoms of the first capacitor and the second capacitor are connected through a microstrip line, so that the first capacitor and the second capacitor are connected in series.

In the embodiment of the present application, the first capacitor and the second capacitor are connected in series, which improves the feasibility of the solution.

Based on the radio frequency amplifier of the first aspect, in a possible implementation manner, the radio frequency amplifier further includes: a third capacitor, where the third capacitor is used to filter the first radio frequency signal, the input module includes a second frame metal layer, and the input lead The feet are located in the second frame metal layer, and the third capacitor and the second frame metal layer are connected by a fourth bonding wire.

In the embodiment of the present application, the third capacitor and the second frame metal layer are connected by a fourth bonding wire, which improves the achievability of the solution.

Based on the radio frequency amplifier of the first aspect, in a possible implementation manner, the third capacitor is located on the flange.

In the embodiment of the present application, the third capacitor is located on the flange, which improves the feasibility of the solution.

Based on the radio frequency amplifier of the first aspect, in a possible implementation manner, the radio frequency amplifier further includes: a fourth capacitor, where the fourth capacitor is used to filter the first radio frequency signal, and the fourth capacitor and the third capacitor are located at the input pin On both sides, the fourth capacitor is located on the flange.

In the embodiment of the present application, the fourth capacitor is located on the flange, which improves the feasibility of the solution.

Based on the radio frequency amplifier of the first aspect, in a possible implementation manner, the third capacitor is located on the lead frame, and the third capacitor is firmly connected to the lead frame.

In the embodiment of the present application, the third capacitor is located on the lead frame, which improves the feasibility of the solution.

Based on the radio frequency amplifier of the first aspect, in a possible implementation manner, the radio frequency amplifier further includes: a fourth capacitor, where the fourth capacitor is used to filter the first radio frequency signal, the fourth capacitor is located on the lead frame, and the fourth capacitor is and the frame metal layer is connected by a fifth bonding wire.

In the embodiment of the present application, the fourth capacitor is located on the lead frame, which improves the feasibility of the solution.

As can be seen from the above technical solutions, the embodiments of the present application have the following advantages:

In the embodiment of the present application, the radio frequency amplifier is made of printed circuit board (PCB) material, so the output pins can be set at the edge of the metal layer of the first frame, so the first bonding wire used to connect the output pins and the die It is relatively short, so the equivalent inductance is small, which ensures the performance of the video bandwidth VBW, thereby improving the performance of the bandwidth.

Description of drawings

FIG. 1 is a schematic structural diagram of a radio frequency amplifier in the prior art provided by an embodiment of the present application;

FIG. 2 is a schematic structural diagram of another radio frequency amplifier in the prior art provided by an embodiment of the present application;

FIG. 3 is a typical low-pass output matching network in the prior art provided by the embodiment of the present application;

FIG. 4 is a typical matching network in a power tube in the prior art provided by the embodiment of the present application;

FIG. 5 is a schematic structural diagram of a radio frequency amplifier provided by an embodiment of the present application;

6 is a schematic diagram of a plane structure of a radio frequency amplifier provided by an embodiment of the present application;

FIG. 7 is another schematic structural diagram of a radio frequency amplifier provided by an embodiment of the present application;

FIG. 8 is another schematic plan structure diagram of the radio frequency amplifier provided by the embodiment of the present application.

Detailed ways

The embodiment of the present application provides a radio frequency amplifier, which makes the equivalent inductance smaller, ensures the performance of the video bandwidth VBW, and thus improves the performance of the bandwidth.

The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

Please refer to FIG. 1 , which is a radio frequency amplifier of the prior art provided by the embodiment of the present application.

As shown in FIG. 1 , it is a common traditional ceramic packaged RF amplifier, which includes a ceramic lead frame 101 , a protective cover 102 , a flange 103 , a bonding wire 104 , a package lead 105 , a power die 106 and a capacitor 107 . The ceramic lead frame 101 is a lead frame made of ceramic material, the ceramic lead frame 101 is mainly used to carry the package pins 105, and the ceramic lead frame 101 is an insulating dielectric material to avoid short-circuit connection between the pins 105 and the flange 103 . Package pins 105 are used to achieve electrical connections, ie, internal connections and external circuit connections. The protective cover 102 only protects the circuits and devices inside the package by the user, and has no function or requirement on electrical performance. The flange 103 is a metal carrier for carrying thermal conductivity and electrical conductivity. The bonding wires 104 are used to connect various devices, for example, the bonding wires 104 are used to connect the package pins 105 and the power die 106 . The power die 106 is used for power amplifying the radio frequency signal transmitted into the radio frequency amplifier.

Among them, for the connection of the RF path of the power die 106 circuit in the RF amplifier, this part of the connection also involves the design of impedance matching. and other devices form an impedance matching design.

As shown in FIG. 2, it is a typical radio frequency amplifier in the prior art. Among them, the dies are connected by bonding wires and other devices such as capacitors, the internal matching capacitors are parallel to the dies and the output pins, and the bonding wires are perpendicular to the long sides of the dies and the capacitors. FIG. 3 is a typical low-pass output matching network in the prior art. In the low-pass output matching network, a first-level low-pass matching network is formed by connecting the die and the capacitor to the output port, in which the equivalent inductance ld1 of the bonding wire is usually larger, and the parallel resonance frequency of the capacitor decreases. , resulting in radio frequency bandwidth (VBW) performance degradation, which affects bandwidth performance. More specifically, as shown in FIG. 4 , FIG. 4 is a typical matching network in the power tube in the prior art, and the matching network in the power tube includes the capacitor cg1 corresponding to the input port and the capacitor cd1 corresponding to the output port.

In addition, since the package form of the ceramic lead frame is fixed, the process of opening the ceramic lead frame is complicated, which affects the design flexibility of the matching network in the overall power tube.

Based on the above problems, the embodiments of the present application provide a radio frequency amplifier, which can ensure the radio frequency bandwidth (VBW) performance and at the same time improve the design flexibility of the matching network in the power tube.

For details, please refer to FIG. 5 , which is a schematic structural diagram of a radio frequency amplifier according to an embodiment of the present application.

As shown in FIG. 5 , the RF amplifier includes a printed circuit board (PCB) lead frame 201 , a flange 202 , an impulse noise monitor 203 , a power die 204 , an output pin 205 , and a first capacitor 206 . Among them, the pulse monitoring noise monitor 203, the power tube die 204 and the capacitor 206 are located on the flange 202, the power tube die 204 and the pulse monitor 203 are connected by bonding wires, and the two pulse monitors 203 are also connected by bonding wires connection, the power tube die 204 is then connected to the output pin through the first bonding wire, wherein the output pin is located in the first frame metal layer in the output module, and the first capacitor 206 and the first frame metal layer pass through the second frame metal layer. The bonding wire is connected, and the first capacitor 206 is used for filtering the second radio frequency signal. The radio frequency amplifier further includes an input module for receiving a first radio frequency signal. When the first radio frequency signal passes through the die, the die amplifies the first radio frequency signal to obtain a second radio frequency signal, and the output module is used for publishing the second radio frequency signal. radio frequency signal. The PCB lead frame is used to carry input pins and output pins, the input pins are used to transmit the first radio frequency signal, and the output pins are used to transmit the second radio frequency signal. The PCB lead frame is made of a printed circuit board.

Specifically, in the RF amplifier, since the PCB lead frame is made of PCB material, it is possible to flexibly open and design an internal matching network at any position on the PCB lead frame. Specifically, the first frame metal layer is arranged on the PCB lead frame. As shown in FIG. 5 , the first frame metal layer can be arranged close to the power die, so that the output pins can also be arranged away from The position of the power die is relatively close, so that the length of the first bonding wire between the output pin 205 and the die 204 is less than the preset threshold, the smaller the length of the first bonding wire, the smaller the corresponding ld1 , so it can ensure that the performance of the bandwidth is improved without reducing the performance of the video bandwidth VBW.

Specifically, in the radio frequency amplifier, the first capacitor can be adhered to the flange on the side of the output pin for output matching of the power tube, and the first capacitor and the first frame metal layer are bonded by a second bonding wire combined to realize the design of the internal matching network. In a possible implementation manner, the radio frequency amplifier may further include a second capacitor, which is also used to filter the second radio frequency signal, and the second capacitor and the first capacitor are located on both sides of the output pin. On the flange, that is, on the flanges on both sides of the first frame metal layer, a first capacitor and a second capacitor are respectively arranged, and the first capacitor and the second capacitor pass through the second bonding wire and the sixth bonding wire respectively. Connect with the first frame metal layer. The first capacitor and the second capacitor and the first frame metal layer are grounded in parallel or in series, which is not specifically limited this time.

It can be understood that in the actual application process, the positions of the first capacitor and the second capacitor can also be set on the flange on the same side of the output pin, and are bonded to the metal layer of the first frame in series or in parallel. This time there is no limit.

It should be noted that the radio frequency amplifier shown in FIG. 5 may also include more devices, and in practical application, there may be more devices. Specifically, the radio frequency amplifier may further include a third capacitor, and the third capacitor is used for filtering the first radio frequency signal. The input module also includes a second frame metal layer, the input module may include a second frame metal layer, the input pins are located in the second frame metal layer, and the third capacitor and the second frame metal layer are connected by a fourth bonding wire .

More specifically, because the PCB lead frame is made of PCB material, it is possible to flexibly open and design the matching network at any position on the PCB lead frame. The second frame metal layer is arranged on the PCB lead frame, and the second frame metal layer can be arranged at a position close to the input power die on the side of the input module, and the input power die is bonded to the input pin, thereby making The input pin can also be set closer to the power die, so that the length of the bonding wire between the input pin and the input power die is less than the preset threshold, so the corresponding lg1 is also smaller, so it can be It is guaranteed to improve the bandwidth performance without reducing the video bandwidth VBW performance.

In a possible implementation manner, the third capacitor can be adhered to the flange of the input pin measurement for input matching of the input power die, and the third capacitor and the second frame metal layer pass through the fourth bonding wire bonding to realize the design of the internal matching network. In a possible implementation manner, the radio frequency amplifier may further include a fourth capacitor, which is also used to filter the first radio frequency signal, and the fourth capacitor and the third capacitor are located on both sides of the output pin. On the flange, that is, on the flanges on both sides of the metal layer of the second frame, a fourth capacitor and a third capacitor are respectively arranged, and the third capacitor and the fourth capacitor pass through the fourth bonding wire and the sixth bonding wire respectively. Connect with the second frame metal layer. Wherein, the third capacitor and the fourth capacitor and the second frame metal layer are grounded in parallel or in series, which is not specifically limited this time.

It can be understood that in the actual application process, the positions of the third capacitor and the fourth capacitor can also be set on the flange on the same side of the input pin, and are bonded to the metal layer of the second frame in series or in parallel. This time there is no limit.

As shown in FIG. 6 , it is a schematic plan view of a radio frequency amplifier provided by an embodiment of the present application. The radio frequency amplifier includes a first capacitor 301 and a second capacitor 301 , an output pin 302 , and a die 303 . The functions and connection modes of each device in the specific radio frequency amplifier are similar to the functions and connection modes of each device of the radio frequency amplifier shown in the foregoing FIG. 5 , and details are not described herein again.

As shown in FIG. 7 , another schematic structural diagram of a radio frequency amplifier provided by an embodiment of the present application.

As shown in FIG. 7 , the RF amplifier includes a printed circuit board (PCB) lead frame 401 , a flange 402 , an impulse noise monitor 403 , a power die 404 , an output pin 405 , and a first capacitor 406 . Among them, the pulse monitoring noise monitor 403, the power tube die 404 are located on the flange 202, the first capacitor 406 is located on the PCB lead frame 401, the first capacitor 406 is firmly connected to the PCB lead frame 401, the power tube die 404 and The pulse monitors 403 are connected by bonding wires, the two pulse monitors 403 are also connected by bonding wires, and the power die 404 is connected with the output pins by the first bonding wires, wherein the output pins are located in the output module In the first frame metal layer, the first capacitor 406 and the first frame metal layer are connected by a second bonding wire, and the first capacitor 406 is used for filtering the second radio frequency signal. The radio frequency amplifier further includes an input module for receiving a first radio frequency signal. When the first radio frequency signal passes through the die, the die amplifies the first radio frequency signal to obtain a second radio frequency signal, and the output module is used for publishing the second radio frequency signal. radio frequency signal. The PCB lead frame is used to carry input pins and output pins, the input pins are used to transmit the first radio frequency signal, and the output pins are used to transmit the second radio frequency signal. The PCB lead frame is made of a printed circuit board.

Specifically, in the RF amplifier, since the PCB lead frame is made of PCB material, it is possible to flexibly open and design an internal matching network at any position on the PCB lead frame. Specifically, the first frame metal layer is arranged on the PCB lead frame. As shown in FIG. 7 , the first frame metal layer can be arranged close to the power die, so that the output pins can also be arranged away from The position of the power die is relatively close, so that the length of the first bonding wire between the output pin 405 and the die 404 is less than the preset threshold, the smaller the length of the first bonding wire, the smaller the corresponding ld1 , so it can ensure that the performance of the bandwidth is improved without reducing the performance of the video bandwidth VBW.

Specifically, in the RF amplifier, the first capacitor can be firmly connected to the PCB lead frame for power tube output matching, and the first capacitor and the metal layer of the first frame are bonded by a second bonding wire to achieve The design of the inner matching network. In a possible implementation manner, the radio frequency amplifier may further include a second capacitor, which is also used to filter the second radio frequency signal, and the second capacitor is firmly connected to the PCB lead frame, that is, in the first The PCB lead frames on both sides of the frame metal layer are respectively provided with a first capacitor and a second capacitor, and the first capacitor and the second capacitor are connected to the first frame metal layer through the second bonding wire and the third bonding wire respectively. connect. The first capacitor and the second capacitor are grounded in parallel or in series with the first frame metal layer. Specifically, the first capacitor and the second capacitor are in contact with the flange by drilling holes on the PCB lead frame, the flange is grounded again, and the first capacitor and the second capacitor are grounded in parallel. Alternatively, the first capacitor and the second capacitor are connected through a microstrip line, so that the first capacitor and the second capacitor are connected to ground in series.

It can be understood that in the actual application process, the positions of the first capacitor and the second capacitor can also be set on the same side of the PCB lead frame, and are bonded to the metal layer of the first frame in series or in parallel. Not limited.

It should be noted that the radio frequency amplifier shown in FIG. 7 may also include more devices, and in practical applications, there may be more devices. Specifically, the radio frequency amplifier may further include a third capacitor, and the third capacitor is used for filtering the first radio frequency signal. The input module also includes a second frame metal layer, the input module may include a second frame metal layer, the input pins are located in the second frame metal layer, and the third capacitor and the second frame metal layer are connected by a fourth bonding wire .

In a possible implementation manner, the third capacitor can be fastened on the PCB lead frame for input matching of the input power die, and the third capacitor and the metal layer of the second frame are bonded by a fourth bonding wire , to realize the design of the inner matching network. In a possible implementation manner, the radio frequency amplifier may further include a fourth capacitor, which is also used for filtering the first radio frequency signal, and the fourth capacitor is firmly connected to the PCB lead frame, that is, in the second The lead frames on both sides of the frame metal layer are respectively provided with a fourth capacitor and a third capacitor, and the third capacitor and the fourth capacitor are respectively connected with the second frame metal layer through the fourth bonding wire and the sixth bonding wire . The third capacitor and the fourth capacitor are grounded in parallel or in series with the metal layer of the second frame. Specifically, the third capacitor and the fourth capacitor are in contact with the flange by punching holes on the PCB lead frame. Then grounded, the third capacitor and the fourth capacitor are connected to ground in parallel. Alternatively, the third capacitor and the fourth capacitor are connected through a microstrip line, so that the third capacitor and the fourth capacitor are connected to ground in series.

It can be understood that, in the actual application process, the positions of the third capacitor and the fourth capacitor can also be set on the same side of the input pin on the PCB lead frame, and are bonded to the metal layer of the second frame in series or in parallel. This time there is no limit.

As shown in FIG. 8 , it is a schematic plan view of a radio frequency amplifier provided by an embodiment of the present application. The radio frequency amplifier includes a first capacitor 501 and a second capacitor 501 , an output pin 502 , and a die 503 . The functions and connection methods of each device in the specific radio frequency amplifier are similar to the functions and connection methods of each device of the radio frequency amplifier shown in the foregoing FIG. 7 , and details are not described herein again.

In the embodiment of the present application, the RF amplifier is made of a PCB to form a lead frame, which has a lower cost than a lead frame made of ceramics. By reducing the length of ld1, the matching in the RF amplifier can be achieved without reducing the VBW performance, and because of the characteristics of the PCB lead frame, the matching circuit design is more friendly, and the circuit integration is higher. Based on the process of PCB lead frame, combined with microstrip and micro-assembly design, the circuit design is more flexible, the harmonic control is better, the harmonic impedance coefficient is larger, the dispersion is more convergent, and the broadband efficiency drops less than the narrowband. . And under the PCB lead frame, the shape of the pins can be arbitrarily designed, and combined with the external circuit design, the overall performance, cost and circuit integration can be optimized.

The terms "first", "second" and the like in the description and claims of the present application and the above drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchanged under appropriate circumstances, and this is only a distinguishing manner adopted when describing objects with the same attributes in the embodiments of the present application. Furthermore, the terms "comprising" and "having" and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, product or device comprising a series of elements is not necessarily limited to those elements, but may include no explicit or other units inherent to these processes, methods, products, or devices.

The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. As used in the embodiments of this application, the singular forms "a," "" and "the" are intended to include the plural forms as well, unless the context clearly dictates otherwise. It should also be understood that, in the description of this application, unless otherwise specified, "/" indicates that the associated objects are in an "or" relationship, for example, A/B can indicate A or B; in this application, "and" "/or" is just an association relationship that describes an associated object, which means that there can be three kinds of relationships, for example, A and/or B, which can mean that A exists alone, A and B exist at the same time, and B exists alone. where A and B can be singular or plural.

Depending on the context, the words "if" or "if" as used herein may be interpreted as "at" or "when" or "in response to determining" or "in response to detecting." Similarly, the phrases "if determined" or "if detected (the stated condition or event)" can be interpreted as "when determined" or "in response to determining" or "when detected (the stated condition or event)," depending on the context )" or "in response to detection (a stated condition or event)".

As mentioned above, the above embodiments are only used to illustrate the technical solutions of the present application, but not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand: The technical solutions described in the embodiments are modified, or some technical features thereof are equivalently replaced; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

A radio frequency amplifier, characterized in that, comprising:

an input module for receiving the first radio frequency signal;

a die for amplifying the first radio frequency signal to obtain a second radio frequency signal;

an output module for outputting the second radio frequency signal;

a lead frame, the lead frame is used to carry input pins and output pins, the input pins are used to transmit the first radio frequency signal, the output pins are used to transmit the second radio frequency signal, the The lead frame is a printed circuit board;

a first capacitor, where the first capacitor is used to filter the second radio frequency signal;

Flange, for conducting electricity;

The output module includes a first frame metal layer, the output pins are located in the first frame metal layer, the output pins and the die are connected by a first bonding wire, and the first bonding The length of the wire is less than a preset threshold, and the first capacitor and the first frame metal layer are connected by a second bonding wire.
The radio frequency amplifier of claim 1, wherein the first capacitor is located on the flange.
The radio frequency amplifier according to claim 2, wherein the radio frequency amplifier further comprises:

A second capacitor, the second capacitor is used to filter the second radio frequency signal, the second capacitor and the first capacitor are located on both sides of the output pin, and the second capacitor is located on the on the flange.
The radio frequency amplifier according to claim 1, wherein the first capacitor is located on the lead frame, and the first capacitor is fastened to the lead frame.
The radio frequency amplifier according to claim 4, wherein the radio frequency amplifier further comprises:

A second capacitor, the second capacitor is used to filter the second radio frequency signal, the second capacitor is located on the lead frame, and the second capacitor and the frame metal layer pass through a third bonding wire connect.
The radio frequency amplifier according to claim 5, wherein the bottoms of the first capacitor and the second capacitor are in contact with the flange through a via hole, the flange is grounded, and the first capacitor and the The second capacitor is connected to ground in parallel.
The radio frequency amplifier according to claim 5, wherein the bottoms of the first capacitor and the second capacitor are connected by a microstrip line, so that the first capacitor and the second capacitor are connected in series.
The radio frequency amplifier according to any one of claims 1 to 7, wherein the radio frequency amplifier further comprises:

a third capacitor, where the third capacitor is used to filter the first radio frequency signal;

The input module includes a second frame metal layer, the input pins are located in the second frame metal layer, and the third capacitor and the second frame metal layer are connected by a fourth bonding wire.
The radio frequency amplifier according to claim 8, wherein the third capacitor is located on the flange.
The radio frequency amplifier according to claim 9, wherein the radio frequency amplifier further comprises:

a fourth capacitor, the fourth capacitor is used to filter the first radio frequency signal, the fourth capacitor and the third capacitor are located on both sides of the input pin, and the fourth capacitor is located on the on the flange.
The radio frequency amplifier according to claim 8, wherein the third capacitor is located on the lead frame, and the third capacitor is fastened to the lead frame.
The radio frequency amplifier according to claim 11, wherein the radio frequency amplifier further comprises:

a fourth capacitor, used for filtering the first radio frequency signal, the fourth capacitor is located on the lead frame, and the fourth capacitor and the frame metal layer pass through the fifth bonding wire connect.