WO2022142995A1 - 一种碳化硅光伏器件 - Google Patents

一种碳化硅光伏器件 Download PDF

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WO2022142995A1
WO2022142995A1 PCT/CN2021/135077 CN2021135077W WO2022142995A1 WO 2022142995 A1 WO2022142995 A1 WO 2022142995A1 CN 2021135077 W CN2021135077 W CN 2021135077W WO 2022142995 A1 WO2022142995 A1 WO 2022142995A1
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silicon carbide
photovoltaic device
passivation layer
substrate
electrode
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French (fr)
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吴兆
徐琛
李子峰
靳金玲
解俊杰
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Longi Green Energy Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1226—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/488—Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/60—Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations

Definitions

  • the present disclosure belongs to the field of photovoltaic technology, and relates to a silicon carbide photovoltaic device.
  • Photovoltaic technology as one of the most potential renewable energy sources, has been used more and more widely. Continuously improving the efficiency of photovoltaic devices is one of the important means to reduce the cost of photovoltaic power generation.
  • the photovoltaic devices on the market are mainly crystalline silicon devices. Due to the limitations of the characteristics of crystalline silicon materials, the efficiency limit of crystalline silicon photovoltaic devices is about 30%, and the current maximum efficiency of monocrystalline silicon solar cells has reached 26.7%. Not much space.
  • Intermediate band photovoltaic devices can achieve photoelectric conversion efficiency beyond that of crystalline silicon photovoltaic devices, and the theoretical efficiency limit of intermediate band materials exceeds 60%, which has greater development and application prospects in the long run.
  • Intermediate band materials are usually point-like or layered materials such as quantum dots and superlattices, but such materials have the disadvantages of high internal defect density and difficult preparation, and the material complexity is high, the body region is high, and the output of photogenerated current is difficult. .
  • silicon carbide intermediate zone material has stable material structure, stable intermediate zone structure, and low defect density in the bulk region, which is conducive to the transport of photogenerated carriers and can achieve high photoelectric conversion efficiency.
  • the middle-band photovoltaic device works under the condition of concentrating light, which is beneficial to obtain high efficiency closer to the efficiency limit.
  • the area of the photoelectric conversion unit required by the concentrating device is small, which is beneficial to control the overall cost.
  • high concentrating conditions can easily lead to an increase in device temperature, which in turn leads to unstable device output and a decrease in photoelectric conversion efficiency; and under high concentrating conditions, the photo-generated carrier concentration of the device is high, and the current carrier caused by imperfect device surface passivation The power loss due to sub-recombination is higher than that of non-concentrating devices, thus requiring better surface passivation.
  • the thermal conductivity of the existing interface passivation materials is poor, which will lead to high thermal resistance on the back surface, resulting in uneven temperature of the device and affecting the efficiency of the device.
  • the present disclosure proposes a photovoltaic device and a concentrating device that use full silicon carbide material in addition to the electrode and the front functional layer, and utilizes the high thermal conductivity of the silicon carbide material to eliminate the difference between back passivation and back thermal resistance. Paradoxically, while obtaining higher device efficiency, higher device thermal conductivity can be obtained.
  • a silicon carbide photovoltaic device comprising a silicon carbide substrate and a passivation layer; the silicon carbide substrate including a silicon carbide light absorbing material having an intermediate band; the passivation layer is located on the silicon carbide One side surface of the substrate includes intrinsic silicon carbide.
  • silicon carbide light absorbing material including an intermediate band is used as the silicon carbide substrate, mainly for two reasons.
  • silicon carbide is a bulk material with few bulk defects, a relatively stable intermediate band structure, and high photoelectric conversion efficiency.
  • silicon carbide material not only has high photoelectric conversion efficiency, but also has excellent thermal conductivity, which can timely and effectively dissipate a large amount of heat generated when working with high concentration multiples.
  • the existing high-efficiency photovoltaic devices suitable for high-power concentration are usually stacked photovoltaic devices.
  • the device layer structure is complex, and there are many interfaces. The thermal conductivity and thermal expansion coefficient of different layers of materials will lead to poor heat dissipation and device structure when the temperature is high. At the same time, the thermal conductivity of the materials used in the existing laminated device is not high, which is not conducive to the overall heat dissipation of the device.
  • the intermediate band photovoltaic device can obtain high photoelectric conversion efficiency under the condition of concentrating light, especially suitable for high power (concentration magnification greater than 100) and ultra-high concentrating system (concentration magnification greater than 1000).
  • Layer devices usually require three pn junctions and more than a dozen layers to improve the conversion efficiency.
  • Intermediate-band devices require an absorption layer and an additional layer to achieve high conversion efficiency of stacked devices. The heat and heat dissipation have become an urgent problem to be solved.
  • the inventor of the present disclosure has a long-term research experience on intermediate-band photovoltaic devices.
  • the passivation layer is composed of intrinsic silicon carbide.
  • the thickness of the passivation layer is greater than or equal to 2 nm. Passivation layer thickness less than 2nm will affect passivation and insulating properties.
  • the intrinsic silicon carbide has a crystal structure, which may be polycrystalline, microcrystalline or single crystal, and the crystal structure includes a cubic structure or a hexagonal structure.
  • Crystalline intrinsic silicon carbide has a regular microstructure, better heat dissipation performance than amorphous intrinsic silicon carbide, and better contact with crystal specific interfaces, so it is a more preferred material.
  • the cubic structure is cubic 3C
  • the hexagonal structure is hexagonal 6H or 4H.
  • the silicon carbide photovoltaic device further includes a front electrode and a back electrode; the back electrode is a full back metal electrode.
  • the full-back metal electrode is combined with the above-mentioned structure of the silicon carbide substrate and the passivation layer, so that the heat generated during the operation of the device can be dissipated more efficiently.
  • the full back metal can be connected to an external heat sink or used as a hot end of other heat utilization devices, which further improves the heat dissipation performance or facilitates the utilization of heat energy.
  • a side of the full-back metal electrode facing the silicon carbide substrate includes a metal alloy or a composite material of metal and carbon material, and the full-back metal electrode faces away from the silicon carbide substrate One side includes copper.
  • the metal alloy includes an alloy formed by two or more of aluminum, silver, copper, tin, indium, gallium, zinc, alkali metals, and alkaline earth metals; and the carbon material includes a graphite-like material alkene, graphdiyne-like.
  • the side of the full back metal electrode facing the silicon carbide substrate is silver, and the side of the full back metal electrode facing away from the silicon carbide substrate is copper.
  • the selection of the above materials can further improve the thermal conductivity of the all-back metal electrode.
  • the passivation layer has openings in the passivation layer, and the back electrode forms electrical contact with the silicon carbide substrate through the openings in the passivation layer.
  • a silicon carbide concentrating photovoltaic device includes the above-mentioned silicon carbide photovoltaic device, and the silicon carbide photovoltaic device further includes a concentrating system, and the concentrating multiple of the concentrating system is different less than 50.
  • the condensing multiple of the light concentrating system is greater than 100. It is precisely because the silicon carbide photovoltaic device provided in this paper has both high energy conversion efficiency and good heat dissipation performance, which makes it particularly suitable for working under high concentration multiples.
  • the full silicon carbide structure in this paper refers to the silicon carbide base layer (absorption layer) and the back thermal passivation layer are both silicon carbide materials, and the two have an anchoring relationship and cannot be replaced with other materials.
  • the silicon carbide base layer has high thermal conductivity and high photoelectric conversion potential;
  • the back thermal passivation layer is made of intrinsic silicon carbide material, which has high thermal conductivity and can reduce the overall thermal resistance of the device.
  • the contact interface between the intrinsic silicon carbide and the silicon carbide absorber layer can achieve better interface atom matching, and can achieve a good chemical passivation effect.
  • full-back metal electrodes Compared with other electrodes, full-back metal electrodes have higher thermal conductivity.
  • the full back metal electrode includes copper material with high thermal conductivity, which has better thermal conductivity. Therefore, the combination of the above two with the full-back metal electrode can achieve high thermal conductivity of the device as a whole, so that the device can maintain a reasonable operating temperature and stabilize the device output under the condition of high light concentration.
  • FIG. 1 is a schematic structural diagram of a silicon carbide photovoltaic device provided by an embodiment of the present disclosure.
  • FIG. 2 is a schematic structural diagram of a silicon carbide photovoltaic device according to another embodiment of the present disclosure.
  • FIG. 1 is a schematic structural diagram of a silicon carbide photovoltaic device provided by an embodiment of the present disclosure.
  • the silicon carbide photovoltaic device includes a silicon carbide substrate 10 and a passivation layer 4 , a back electrode 3 , a front functional layer 5 , and a front electrode 2 .
  • a silicon carbide wafer is first provided as the silicon carbide substrate 10 , a silicon carbide light absorption layer with an intermediate band is formed in the silicon carbide substrate 10 by means of ion implantation and doping, and then a passivation layer 4 is formed on the silicon carbide substrate 10 .
  • the material used in the passivation layer 4 is an intrinsic hexagonal silicon carbide material, which is generated by a vapor phase epitaxy deposition process and has a thickness of 50 nm; lattice structure openings (that is, passivation layer openings 41) are set on it by means of laser openings. , so as to realize the electrical contact between the back electrode 3 and the silicon carbide substrate 10 .
  • the back electrode 3 is a composite structure. First, the silver electrode is printed, and then the back of the silver electrode is covered with a polished copper full back electrode and then sintered. The copper electrode is used as an external output electrode and a heat dissipation structure for downward heat dissipation.
  • the front functional layer 5 is a stacked structure of silicon oxide, aluminum oxide, and silicon nitride, wherein silicon oxide is a chemical passivation layer, and aluminum oxide and silicon nitride are field passivation layers. Linear grooves are provided on the front functional layer 5 by a laser groove process.
  • the front electrode 2 is arranged on the front functional layer 5 by a process of sintering after screen printing, and the front electrode 2 is electrically connected to the silicon carbide substrate 10 through the above-mentioned linear slotting (or called front functional layer opening/front functional layer slotting). touch.
  • the silicon carbide substrate 10 further includes a first thin layer 12, a second thin layer 13, and a silicon carbide substrate body 11 located between the first thin layer 12 and the second thin layer 13 (the silicon carbide substrate body 11 is the silicon carbide substrate). Other parts except the first thin layer 12 and the second thin layer 13).
  • the silicon carbide base body 11 is composed of cubic silicon carbide, with a thickness of 100 ⁇ m, p-type doping, and a doping concentration of 1 ⁇ 10 14 cm ⁇ 3 ; the silicon carbide base body 11 has intermediate band doping, using nickel element It is an intermediate band doping element, and the nickel element is doped by a doping process of ion implantation and then annealing.
  • the first thin layer 12 is heavily doped p-type silicon carbide, which is doped in-situ by ion implantation followed by annealing, and the doping concentration is in the order of 1 ⁇ 10 15 cm ⁇ 3 to 1 ⁇ 10 16 cm ⁇ 3 .
  • the second thin layer 13 is heavily doped n-type silicon carbide, which adopts the vapor phase epitaxy deposition process, and the doping concentration is in the order of 1 ⁇ 10 15 cm -3 -1 ⁇ 10 16 cm -3 ; the silicon carbide base body 11 , the second The thin layer 13 forms a pn junction.
  • FIG. 2 is a schematic structural diagram of a silicon carbide photovoltaic device provided by an embodiment of the present disclosure.
  • the silicon carbide photovoltaic device includes a silicon carbide substrate 10 in direct contact with a passivation layer 4 , a back electrode 3 , a front functional layer 5 , and a front electrode 2 .
  • the silicon carbide base 10 is formed first, and then the passivation layer 4 is formed on the silicon carbide base 10 .
  • the material used in the passivation layer 4 is an intrinsic cubic silicon carbide material, which is generated by a post-deposition crystallization process and has a thickness of 30 nm; lattice structure openings (that is, the passivation layer openings 41) are set on it by means of laser openings. ) to achieve electrical contact with the silicon carbide substrate 10 .
  • An embodiment of the post-deposition crystallization process is that the amorphous intrinsic silicon carbide can be deposited by vacuum sputtering first, and then annealed and crystallized in an inert gas atmosphere in the temperature range of 900-1500°C;
  • the back electrode 3 is a composite structure. First, the aluminum electrode is printed, and then the back is covered with a polished copper full back electrode and then sintered. The copper electrode is used as an external output electrode and a heat dissipation structure for downward heat dissipation.
  • the front functional layer 5 is a laminated structure of silicon oxide, aluminum oxide, and silicon nitride, wherein silicon oxide is a chemical passivation layer, aluminum oxide and silicon nitride are field passivation layers, and simultaneously serve as a surface anti-reflection film. Linear grooves are provided on the front functional layer 5 by a laser groove process.
  • the front electrode 2 is arranged on the front functional layer 5 by a process of sintering after screen printing, and the front electrode 2 is electrically connected to the silicon carbide substrate 10 through the above-mentioned linear slotting (or called front functional layer opening/front functional layer slotting). touch.
  • the silicon carbide base 10 further includes a first contact area 14, a second contact area 15, and a silicon carbide base body 11 located between the first contact area 14 and the second contact area 15 (the silicon carbide base body 11 is the silicon carbide base body 11). Other parts except the first contact area 14 and the second contact area 15).
  • the silicon carbide base body 11 is cubic silicon carbide with a thickness of 80 ⁇ m.
  • the silicon carbide base body 11 has n-type doping, the doping concentration is 1 ⁇ 10 14 cm -3 level, the lower surface is p-type doping, and the doping concentration is 1 ⁇ 10 14 cm -3 magnitude; the silicon carbide base body 11 is provided with intermediate band doping, and nickel element is used as the intermediate band doping element.
  • the first contact region 14 is heavily doped n-type silicon carbide, and the corresponding position of the front electrode 2 is doped in-situ by an ion implantation process, and the doping concentration is 1 ⁇ 10 15 cm -3 -1 ⁇ 10 16 cm -3 magnitude. Since the first contact region 14 is formed by in-situ doping using an ion implantation process, it can be seen from FIG. 2 that the shape of the first contact region 14 is a semi-spherical shape. According to the specific operation of the ion implantation process.
  • the second contact region 15 is heavily doped p-type silicon carbide, and the contact position between the back electrode 3 and the absorber layer 10 is doped in-situ by ion implantation, and the doping concentration is 1 ⁇ 10 15 cm ⁇ 3 -1 ⁇ 10 16 cm -3 magnitude. Since the second contact region 15 is formed by in-situ doping using an ion implantation process, it can be seen from FIG. 2 that the shape of the second contact region 15 is a semi-spherical shape. According to the specific operation of the ion implantation process.

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Abstract

一种碳化硅光伏器件，所述碳化硅光伏器件包括碳化硅基体和钝化层；所述碳化硅基体包括具有中间带的碳化硅光吸收材料；所述钝化层位于所述碳化硅基体的一侧表面，包括本征碳化硅。本发明提供的上述碳化硅光伏器件除电极与正面功能层外，采用全碳化硅材料，利用碳化硅材料的高导热系数，消除了背面钝化与背面热阻的矛盾，在获得较高器件效率的同时，可以获得较高的器件导热效率。

Description

一种碳化硅光伏器件
相关申请的交叉引用
本申请要求在2020年12月29日提交中国专利局、申请号为202011602490.4、名称为“一种碳化硅光伏器件”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开属于光伏技术领域，涉及一种碳化硅光伏器件。
背景技术
光伏技术作为最有潜力的可再生能源之一，得到越来越广泛的应用，持续提高光伏器件效率是降低光伏发电成本的重要手段之一。
目前市场上的光伏器件以晶体硅器件为主，受晶体硅材料自身特性的限制，晶体硅光伏器件的效率极限约为30％，且目前单晶硅太阳电池最高效率已经达到26.7％，剩余提升空间不大。
中间带光伏器件可以实现超越晶硅光伏器件的光电转换效率，中间带材料的理论效率极限超过60％，长远来看具备更大的发展和应用前景。
中间带材料通常是量子点、超晶格等点状或层状材料，但是此类材料存在内部缺陷密度大、制备困难等缺点，且材料复杂程度较高，体区复合高，光生电流输出困难。
概述
碳化硅中间带材料作为体相中间带材料，材料结构稳定，中间带结构稳定，体区缺陷密度低，有利于光生载流子的传输，可以获得较高的光电转换效率。
中间带光伏器件在聚光条件下工作有利于获得更加接近效率极限的高效率，同时聚光器件所需光电转换单元面积较小，有利于控制整体成本。但是，高倍聚光条件容易导致器件温度升高，进而导致器件输出不稳定，光电转换效率下降；且高倍聚光条件下器件光生载流子浓度较高，器件表面钝化 不完善导致的载流子复合造成的功率损失比非聚光器件更高，因此需要较好的表面钝化。
然而，现有的界面钝化材料导热性能较差，会导致背面热阻较高，造成器件温度不均匀，影响器件效率。
基于以上认知，本公开提出一种除电极与正面功能层外，采用全碳化硅材料的光伏器件和聚光器件，利用碳化硅材料的高导热系数，消除了背面钝化与背面热阻的矛盾，在获得较高器件效率的同时，可以获得较高的器件导热效率。
本文提供一种碳化硅光伏器件，所述碳化硅光伏器件包括碳化硅基体和钝化层；所述碳化硅基体包括具有中间带的碳化硅光吸收材料；所述钝化层位于所述碳化硅基体的一侧表面，包括本征碳化硅。
本文采用包括具有中间带的碳化硅光吸收材料作为碳化硅基体，主要有两方面的理由。其一，相对于其他的中间带材料而言，碳化硅是块体材料，块体缺陷少，中间带结构较为稳定，光电转换效率高。其二，碳化硅材料在具有高的光电转换效率的同时，还具备优异的导热性能，能够将高聚光倍数工作时产生的大量热及时、有效地散发出去。现有的适用于高倍聚光的高效率光伏器件通常为叠层光伏器件，器件层结构复杂，界面多，不同层材料的导热系数与热膨胀系数不同会导致散热不佳及温度较高时器件结构的失效；同时，现有的叠层器件所用材料导热系数均不高，不利于器件整体的散热。
本文选择本征碳化硅作为钝化层，则有更多的考虑。首先，中间带光伏器件在聚光条件下可以获得较高的光电转换效率，尤其适用于高倍(聚光倍率大于100)及超高倍聚光系统(聚光倍率大于1000)，现有技术中叠层器件通常需要三个pn结、超过十几层结构来提高转换效率，中间带器件需要一个吸收层和附加层即可达到叠层器件的高转换效率，而高聚光倍数工作状态下，会产生大量的热，散热成了一个亟待解决的问题。本公开的发明人对于中间带光伏器件有长时间的研究经验，将聚光倍数提高时，由于碳化硅基体的高导热系数，常规钝化层如氧化硅、氮化硅、氧化铝等(对其进行了各种调整，包括厚度、制备条件等，结果都不尽人意)均不能与其配合获得低界面热阻及整体高导热系数与稳定性。非掺杂的本征晶体碳化硅，由于具有与吸收层(碳化硅基体)类似的结构，两者接触界面可以实现很好的原子匹 配，且本征晶体层不参与载流子传导，可以实现较好的表面化学钝化，相对于其他钝化层材料而言，界面热阻将会明显减小。正是基于这一认识，发明人提出上述技术方案，在碳化硅基体和钝化层中同时采用碳化硅材料，在保证了高的转换效率的同时，很好地解决了器件散热的问题。
根据本公开的一种实施方式，例如，所述钝化层由本征碳化硅构成。
根据本公开的一种实施方式，例如，所述钝化层的厚度大于或等于2nm。钝化层厚度小于2nm会影响钝化和绝缘性能。
根据本公开的一种实施方式，例如，所述本征碳化硅具有晶体结构，所述晶体结构可以为多晶、微晶或单晶，所述晶体结构包括立方结构或六方结构。晶体结构的本征碳化硅具有规律的微观结构，散热性能较非晶态的本征碳化硅更好，与晶体具体界面接触更好，因而是更优选的材料。
根据本公开的一种实施方式，例如，所述立方结构为立方3C，所述六方结构为六方6H或4H。
根据本公开的一种实施方式，例如，所述碳化硅光伏器件还包括正面电极和背面电极；所述背面电极为全背金属电极。与其他材料和结构的电极相比，全背金属电极具有更好的导热性能。全背金属电极与上述碳化硅基体和钝化层的结构结合在一起，可以更加高效地将器件工作时产生的热散发出去。此外，全背金属可以连接外部散热器或作为其他热利用器件的热端，进一步提高散热性能或有利于热能的利用。
根据本公开的一种实施方式，例如，所述全背金属电极朝向所述碳化硅基体的一侧包括金属合金或者金属与碳材料的复合材料，所述全背金属电极背离所述碳化硅基体的一侧包括铜。
根据本公开的一种实施方式，例如，所述金属合金包括铝、银、铜、锡、铟、镓、锌、碱金属、碱土金属中两种以上形成的合金；所述碳材料包括类石墨烯、类石墨炔。
根据本公开的一种实施方式，例如，所述全背金属电极朝向所述碳化硅基体的一侧为银，所述全背金属电极背离所述碳化硅基体的一侧为铜。上述材料的选择可以进一步改善全背金属电极的导热性能。
根据本公开的一种实施方式，例如，所述钝化层具有钝化层开孔，所述背面电极通过所述钝化层开孔与所述碳化硅基体形成电接触。
本文还提供一种碳化硅聚光光伏器件，所述聚光光伏器件包括如上所述的碳化硅光伏器件，所述碳化硅光伏器件还包括聚光系统，所述聚光系统的聚光倍数不小于50。
根据本公开的一种实施方式，例如，所述聚光系统的聚光倍数大于100。正是由于本文提供的碳化硅光伏器件同时具备高的能量转换效率和良好的散热性能，使得其特别适于在高聚光倍数下工作。
本公开的技术方案具备以下优良的技术效果。
本文全碳化硅结构指的是碳化硅基体层(吸收层)与背面导热钝化层均为碳化硅材料，二者具备锚定关系，不能替换为其他材料。碳化硅基体层具备高导热效率，同时具备高光电转换潜力；背面导热钝化层采用本征碳化硅材料，具备高导热效率，可以降低器件整体热阻。同时，本征碳化硅与碳化硅吸收层接触界面可以实现较好的界面原子匹配，可以实现良好的化学钝化效果。
全背金属电极相对于其他电极来说，具有更高的导热系数。特别是，全背金属电极包括导热系数高的铜材料，导热性能更佳。因此，上述二者与全背金属电极配合，可以实现器件整体的高导热效率，使得该器件可以在高倍聚光条件下保持合理的工作温度，稳定器件输出。
附图简述
此处所说明的附图用来提供对本公开的进一步理解，构成本公开的一部分，本公开的示意性实施例及其说明用于解释本公开，并不构成对本公开的不当限定。在附图中：
图1为本公开实施例提供的一种碳化硅光伏器件结构示意图；并且
图2为本公开另一实施例提供的一种碳化硅光伏器件结构示意图。
详细描述
下面结合附图更详细地描述本公开的实施方式。可以理解的是，此处所描述的具体实施例仅仅用于解释相关公开，而非对该公开的限定。另外还需要说明的是，为了便于描述，附图中仅示出了与公开相关的部分。
需要说明的是，在不冲突的情况下，本公开中的实施例及实施例中的特 征可以相互组合。下面将参考附图并结合实施例来详细说明本公开。
实施例1
图1是本公开实施例提供的一种碳化硅光伏器件结构示意图。如图1所示，碳化硅光伏器件包括碳化硅基体10和钝化层4、背面电极3、正面功能层5、以及正面电极2。
其中，首先提供碳化硅晶片作为碳化硅基体10，通过离子注入掺杂等方式在碳化硅基体10中形成具有中间带的碳化硅光吸收层，然后在碳化硅基体10之上形成钝化层4。
钝化层4所采用的材料为本征六方碳化硅材料，采用气相外延沉积工艺生成，厚度为50nm；其上通过激光开孔的方式设置点阵结构开孔(即钝化层开孔41)，以实现背面电极3与碳化硅基体10的电学接触。
钝化层4的一面与碳化硅基体10相接触，另一面通过丝网印刷后烧结的方式生成背面电极3。背面电极3为复合结构，首先印刷银电极，后在银电极背面覆盖抛光铜全背电极后烧结，铜电极作为对外输出电极，同时作为向下散热的散热结构。
碳化硅基体10的一面与钝化层4相接触，另一面沉积正面功能层5。正面功能层5为氧化硅、氧化铝、氮化硅叠层结构，其中氧化硅为化学钝化层，氧化铝、氮化硅为场钝化层。在正面功能层5上通过激光开槽工艺设置线状开槽。在正面功能层5上通过丝网印刷后烧结的工艺设置正面电极2，正面电极2通过上述线状开槽(或者称正面功能层开孔/正面功能层开槽)与碳化硅基体10产生电学接触。
碳化硅基体10进一步包括第一薄层12、第二薄层13以及位于所述第一薄层12和第二薄层13之间的碳化硅基体主体11(碳化硅基体主体11即碳化硅基体除第一薄层12和第二薄层13之外的其他部分)。碳化硅基体主体11由立方碳化硅构成，厚度为100μm，具备p型掺杂，掺杂浓度为1×10 14cm -3量级；碳化硅基体主体11中具备中间带掺杂，采用镍元素为中间带掺杂元素，镍元素掺杂采用离子注入后退火的掺杂工艺。
第一薄层12为重掺杂p型碳化硅，采用离子注入后退火的工艺进行原位掺杂，掺杂浓度为1×10 15cm -3-1×10 16cm -3量级。
第二薄层13为重掺杂n型碳化硅，采用气相外延沉积工艺，掺杂浓度 为1×10 15cm -3-1×10 16cm -3量级；碳化硅基体主体11、第二薄层13构成pn结。
实施例2
图2是本公开实施例提供的一种碳化硅光伏器件结构示意图。如图2所示，碳化硅光伏器件包括直接接触的碳化硅基体10和钝化层4、背面电极3、正面功能层5、以及正面电极2。
其中，先形成碳化硅基体10，然后再在碳化硅基体10之上形成钝化层4。
钝化层4所采用的材料为本征立方碳化硅材料，采用沉积后晶化工艺生成，厚度为30nm；其上通过激光开孔的方式设置点阵结构开孔(即钝化层开孔41)，以实现与碳化硅基体10的电学接触。沉积后晶化工艺一种实施方式为，可以先采用真空溅射的方法沉积非晶本征碳化硅，后在900-1500℃温度范围内惰性气体氛围退火晶化；
钝化层4的一面与碳化硅基体10相接触，另一面通过丝网印刷后烧结的方式生成背面电极3。背面电极3为复合结构，首先印刷铝电极，后在背面覆盖抛光铜全背电极后烧结，铜电极作为对外输出电极，同时作为向下散热的散热结构。
碳化硅基体10的一面与钝化层4相接触，另一面沉积正面功能层5。正面功能层5为氧化硅、氧化铝、氮化硅叠层结构，其中氧化硅为化学钝化层，氧化铝、氮化硅为场钝化层，同时作为表面减反射薄膜。在正面功能层5上通过激光开槽工艺设置线状开槽。在正面功能层5上通过丝网印刷后烧结的工艺设置正面电极2，正面电极2通过上述线状开槽(或者称正面功能层开孔/正面功能层开槽)与碳化硅基体10产生电学接触。
碳化硅基体10进一步包括第一接触区域14、第二接触区域15以及位于所述第一接触区域14、第二接触区域15之间的碳化硅基体主体11(碳化硅基体主体11即碳化硅基体除第一接触区域14、第二接触区域15之外的其他部分)。碳化硅基体主体11为立方碳化硅，厚度80μm，碳化硅基体主体11具备n型掺杂，掺杂浓度为1×10 14cm -3量级，下表面为p型掺杂，掺杂浓度为1×10 14cm -3量级；碳化硅基体主体11中具备中间带掺杂，采用镍元素为中间带掺杂元素。
第一接触区域14为重掺杂n型碳化硅，在正面电极2的对应位置采用离子注入工艺进行原位掺杂，掺杂浓度为1×10 15cm -3-1×10 16cm -3量级。由于采用离子注入工艺进行原位掺杂形成第一接触区域14，由图2可见，第一接触区域14的形状为类半球形。根据离子注入工艺的具体操作。
第二接触区域15为重掺杂p型碳化硅，在背面电极3与吸收层10接触位置采用离子注入工艺进行原位掺杂，掺杂浓度为1×10 15cm -3-1×10 16cm -3量级。由于采用离子注入工艺进行原位掺杂形成第二接触区域15，由图2可见，第二接触区域15的形状为类半球形。根据离子注入工艺的具体操作。
在上述实施方式的描述中，具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (13)

  1. 一种碳化硅光伏器件其特征在于，所述碳化硅光伏器件包括碳化硅基体和钝化层；
    所述碳化硅基体包括具有中间带的碳化硅光吸收材料；
    所述钝化层位于所述碳化硅基体的一侧表面，包括本征碳化硅。
  2. 根据权利要求1所述的碳化硅光伏器件，其特征在于，所述钝化层由本征晶体碳化硅构成。
  3. 根据权利要求2所述的碳化硅光伏器件，其特征在于，所述晶体碳化硅可以为多晶、微晶或单晶。
  4. 根据权利要求2所述的碳化硅光伏器件，其特征在于，所述钝化层的厚度大于或等于2nm。
  5. 根据权利要求2-4任一项所述的碳化硅光伏器件，其特征在于，所述本征碳化硅具有晶体结构，所述晶体结构包括立方结构或六方结构。
  6. 根据权利要求5所述的碳化硅光伏器件，其特征在于，所述立方结构为立方3C，所述六方结构为六方6H或4H。
  7. 根据权利要求1所述的碳化硅光伏器件，其特征在于，所述碳化硅光伏器件还包括正面电极和背面电极；所述背面电极为全背金属电极。
  8. 根据权利要求7所述的碳化硅光伏器件，其特征在于，所述全背金属电极朝向所述碳化硅基体的一侧包括金属合金或者金属与碳材料的复合材料，所述全背金属电极背离所述碳化硅基体的一侧包括铜。
  9. 根据权利要求8所述的碳化硅光伏器件，其特征在于，所述金属合金包括铝、银、铜、锡、铟、镓、锌、碱金属、碱土金属中两种以上形成的合金；所述碳材料包括类石墨烯、类石墨炔。
  10. 根据权利要求7所述的碳化硅光伏器件，其特征在于，所述全背金属电极朝向所述碳化硅基体的一侧为银，所述全背金属电极背离所述碳化硅基体的一侧为铜。
  11. 根据权利要求7-10任一项所述的碳化硅光伏器件，其特征在于，所述钝化层具有钝化层开孔，所述背面电极通过所述钝化层开孔与所述碳化硅基体形成电接触。
  12. 一种碳化硅聚光光伏器件，其特征在于，所述聚光光伏器件包括权利要求1-11任一项所述的碳化硅光伏器件，所述碳化硅光伏器件还包括聚光系统，所述聚光系统的聚光倍数不小于50。
  13. 根据权利要求12所述的碳化硅聚光光伏器件，其特征在于，所述聚光系统的聚光倍数大于100。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118738174A (zh) * 2024-06-28 2024-10-01 牟华琪 一种多晶型碳化硅光伏电池及多晶型碳化硅基板制造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115347061B (zh) * 2022-08-17 2025-02-07 上海航天电子通讯设备研究所 一种异面正对圆电极高耐压碳化硅光导开关

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1032267A (zh) * 1987-08-19 1989-04-05 能源变换设备有限公司 具有一个空间调制本征层的薄膜太阳能电池
CN101820006A (zh) * 2009-07-20 2010-09-01 湖南共创光伏科技有限公司 高转化率硅基单结多叠层pin薄膜太阳能电池及其制造方法
CN103700576A (zh) * 2013-12-17 2014-04-02 西安文理学院 一种自组装形成尺寸可控的硅纳米晶薄膜的制备方法
CN110212037A (zh) * 2019-04-17 2019-09-06 天津爱旭太阳能科技有限公司 选择性增强正面钝化的perc太阳能电池及其制备方法
CN110246923A (zh) * 2019-06-29 2019-09-17 深圳黑晶光电科技有限公司 一种串联型钙钛矿/同质结硅叠层太阳能电池及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6475889B1 (en) * 2000-04-11 2002-11-05 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
US20090250108A1 (en) * 2008-04-02 2009-10-08 Applied Materials, Inc. Silicon carbide for crystalline silicon solar cell surface passivation
CN102569508B (zh) * 2011-12-29 2014-10-22 中山大学 一种纳米线阵列结构薄膜太阳能光伏电池及其制备方法
KR101379221B1 (ko) * 2012-06-29 2014-04-07 한밭대학교 산학협력단 태양전지용 ＳｉＣｘ 패시베이션 박막 형성방법 및 이에 의해 제조되는 패시베이션 박막을 구비한 태양전지
DE102014205350B4 (de) * 2014-03-21 2021-09-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photoaktives Halbleiterbauelement sowie Verfahren zum Herstellen eines photoaktiven Halbleiterbauelementes
CN104409553B (zh) * 2014-11-04 2017-09-08 中国科学院半导体研究所 碳化硅中间带太阳电池及其制备方法
CN110444313A (zh) * 2018-06-08 2019-11-12 吉林大学 一种基于碳化硅PN结型β辐射伏特效应核电池
CN109243659B (zh) * 2018-10-08 2020-01-07 山西大同大学 一种基于碳化硅材料的微型核电池及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1032267A (zh) * 1987-08-19 1989-04-05 能源变换设备有限公司 具有一个空间调制本征层的薄膜太阳能电池
CN101820006A (zh) * 2009-07-20 2010-09-01 湖南共创光伏科技有限公司 高转化率硅基单结多叠层pin薄膜太阳能电池及其制造方法
CN103700576A (zh) * 2013-12-17 2014-04-02 西安文理学院 一种自组装形成尺寸可控的硅纳米晶薄膜的制备方法
CN110212037A (zh) * 2019-04-17 2019-09-06 天津爱旭太阳能科技有限公司 选择性增强正面钝化的perc太阳能电池及其制备方法
CN110246923A (zh) * 2019-06-29 2019-09-17 深圳黑晶光电科技有限公司 一种串联型钙钛矿/同质结硅叠层太阳能电池及其制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118738174A (zh) * 2024-06-28 2024-10-01 牟华琪 一种多晶型碳化硅光伏电池及多晶型碳化硅基板制造方法

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