WO2022141798A1 - Read/write window calibration circuit and method, memory, and fpga chip - Google Patents

Read/write window calibration circuit and method, memory, and fpga chip Download PDF

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Publication number
WO2022141798A1
WO2022141798A1 PCT/CN2021/079686 CN2021079686W WO2022141798A1 WO 2022141798 A1 WO2022141798 A1 WO 2022141798A1 CN 2021079686 W CN2021079686 W CN 2021079686W WO 2022141798 A1 WO2022141798 A1 WO 2022141798A1
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WIPO (PCT)
Prior art keywords
read
window
write
circuit
calibration
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PCT/CN2021/079686
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French (fr)
Chinese (zh)
Inventor
潘超
张勇
温长清
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深圳市紫光同创电子有限公司
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Priority to JP2023528283A priority Critical patent/JP2023549200A/en
Publication of WO2022141798A1 publication Critical patent/WO2022141798A1/en

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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222Clock generating, synchronizing or distributing circuits within memory device
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers

Definitions

  • the present application relates to the technical field of integrated circuits, and in particular, to a read-write window calibration circuit and method, a memory, and an FPGA chip.
  • FPGA Field-Programmable Gate Array
  • Embodiments of the present application provide a read-write window calibration circuit and method, a memory, and an FPGA chip to solve the above problems.
  • a read-write window calibration circuit including a calibration verification circuit and a read-write control sequence generation circuit.
  • the calibration verification circuit is configured to verify whether the read data can pass the read window and the write data can pass the write window in the current clock cycle.
  • the read-write control timing generation circuit is configured to increase the read window when the read data cannot pass through the read window.
  • the read and write control timing generation circuit is further configured to increase the write window when the write data cannot pass through the write window.
  • the calibration verification circuit is further configured to obtain the operating frequency of the read-write window calibration circuit, and when the operating frequency is less than the preset frequency, controls the read-write control sequence generation circuit to reduce the read window and/or the write window, and at the next clock cycle, and repeatedly verify whether the read data can pass the read window and whether the write data can pass the write window.
  • a memory comprising a plurality of storage units and the read/write window calibration circuit described in the first aspect, where the read/write window calibration circuit is used to calibrate a read window and a write window of the storage unit.
  • an FPGA chip including the memory described in the second aspect.
  • a method for calibrating a read-write window comprising: a calibration verification circuit verifies, within a current clock cycle, whether read data can pass the read window and whether write data can pass the write window; when the read data cannot pass the read window When the read-write control sequence generation circuit is used to increase the read window; when the write data cannot pass the write window, the read-write control sequence generation circuit increases the write window; the calibration verification circuit obtains the operating frequency of the read-write window calibration circuit. When the frequency is set, the read and write control sequence generation circuit is controlled to reduce the read window and/or the write window, and in the next clock cycle, it is repeatedly verified whether the read data can pass the read window and whether the write data can pass the write window.
  • the read-write window calibration circuit includes a calibration verification circuit and a read-write control sequence generation circuit.
  • Use the calibration verification circuit to verify whether the read data can pass the read window and whether the write data can pass the write window; when the read data cannot pass the read window, the read window can be increased to make the read data pass through the read window as much as possible.
  • the write window can be increased to make the write data pass through the write window as much as possible; after that, due to the increase of the read window and/or the write window, the operating frequency of the read and write window calibration circuit is reduced.
  • the read window and/or the write window can be appropriately reduced, so that the read data can pass through the read window and the write data can pass through the write window, and the operating frequency meets the preset frequency, so that the read and write window calibration circuit can operate normally. At the working frequency, read and write data.
  • the above process can be automatically completed by the read-write window calibration circuit, which is convenient and reliable, and can improve user experience.
  • FIG. 1 is a circuit connection diagram of a read-write window calibration circuit provided by an embodiment of the present application
  • FIG. 2 is a working process diagram of a read-write window calibration circuit provided by an embodiment of the present application
  • FIG. 3 is a working process diagram of a read-write window calibration circuit provided by an embodiment of the present application.
  • FIG. 4 is a working process diagram of a read-write window calibration circuit provided by an embodiment of the present application.
  • FIG. 5 is a working process diagram of a read-write window calibration circuit provided by an embodiment of the present application.
  • FIG. 6 is a working process diagram of a read-write window calibration circuit provided by an embodiment of the present application.
  • FIG. 7 is a relationship diagram of each module of a memory provided by an embodiment of the present application.
  • FIG. 8 is a relationship diagram of each module of an FPGA chip provided by an embodiment of the present application.
  • FIG. 9 is a schematic flowchart of a read-write window calibration method provided by an embodiment of the present application.
  • 10000-FPGA chip 1000-memory; 100-read-write window calibration circuit; 10-calibration verification circuit; 20-read-write control sequence generation circuit; 30-status register; 40-environmental monitoring circuit; 50-read-write window configuration adjustment circuit; 60-configuration memory; 200-storage unit.
  • an embodiment of the present application provides a read-write window calibration circuit 100 , which includes a calibration verification circuit 10 and a read-write control sequence generation circuit 20 .
  • the calibration verification circuit 10 is configured to verify whether the read data can pass the read window and whether the write data can pass the write window in the current clock cycle.
  • the read/write control timing generation circuit 20 is configured to increase the read window when the read data cannot pass the read window, and to increase the write window when the write data cannot pass the write window.
  • the calibration verification circuit 10 is further configured to obtain the operating frequency of the read-write window calibration circuit 100, and when the operating frequency is less than the preset frequency, control the read-write control sequence generation circuit to reduce the read window and/or the write window, and at the next clock cycle, and repeatedly verify whether the read data can pass the read window and whether the write data can pass the write window.
  • the read-write window calibration circuit 100 may further include a status register 30 for storing the verification result of the calibration verification circuit 10 .
  • the read/write control sequence generation circuit 20 can send the Verify_en signal to the calibration verification circuit 10.
  • the Verify_en signal is at a high level, under the action of the Verify_en signal, The calibration verification circuit 10 starts to verify whether the read data can pass the read window and whether the write data can pass the write window.
  • the calibration verification circuit 10 can send the Adjust_en signal and the Adjust_rd signal to the read-write control sequence generation circuit 20.
  • the Read/write control timing generation circuit 20 is ready to work when receiving the Adjust_en signal, and when the read/write control timing generation circuit 20 receives the Adjust_rd signal, it starts to adjust the timing of the read window to increase the read window.
  • the calibration verification circuit 10 can send the Adjust_en signal and the Adjust_wr signal to the read and write control timing generation circuit 20.
  • the Read/write control sequence generation circuit 20 When the Adjust_en signal and the Adjust_wr signal When the level is high, the read/write control sequence generation circuit 20 is ready to work when receiving the Adjust_en signal, and when the read/write control sequence generation circuit 20 receives the Adjust_wr signal, it starts to adjust the timing of the write window and increase the write window.
  • the calibration verification circuit 10 receives the Freq_overflow signal, when the Freq_overflow signal is at a high level, the calibration verification circuit 10 can control the read and write control sequence generation circuit 20 to reduce the read window and/or the write window, and in the next clock cycle, repeatedly verify whether the read data can pass through. Whether the read window and write data can pass through the write window. If the read data can pass the read window and the write data can pass the write window, as shown in FIG. 3 , the output calibration is successful, and the verification is stopped.
  • the calibration verification circuit 10 sends the Verify_successed signal to the status register 30, and the status register 30 will verify the successful The state is stored; if the read data cannot pass through the read window, and/or the write data cannot pass through the write window, continue to increase the read window and/or the write window according to the process shown in FIG. 1 .
  • the Verify_en signal goes from high to low.
  • the calibration verification circuit 10 and the read-write control sequence generation circuit 20 both start to work under a high-level signal, which is related to the characteristics of the calibration verification circuit 10 and the read-write control sequence generation circuit 20.
  • a high-level signal which is related to the characteristics of the calibration verification circuit 10 and the read-write control sequence generation circuit 20.
  • the calibration verification circuit 10 can control the read and write control timing generation circuit 20 to reduce the read window and/or the write window, including:
  • the read/write control sequence generation circuit 20 increases the read window, and if the operating frequency is less than the preset frequency, the calibration verification circuit 10 can control the read/write control sequence generation circuit 20 to reduce the read window.
  • the width of the increased read window (the duration of the read window is increased) is greater than the width of the decreased read window.
  • the read/write control sequence generation circuit 20 increases the read window, and if the operating frequency is less than the preset frequency, the calibration verification circuit 10 can control the read/write control sequence generation circuit 20 to reduce the write window. Due to the current clock cycle, the write data can pass through the write window, but the read data cannot pass through the read window. Therefore, when the operating frequency is lower than the preset frequency due to the increase of the read window, the write window can be reduced, and the increase of the read window can be reduced. After that, the read data still fails to pass the read window.
  • the calibration verification circuit 10 may control the read/write control sequence generation circuit 20 to reduce the read window and write window. Wherein, the width of the increased read window is greater than the width of the decreased read window.
  • the calibration verification circuit 10 can control the read/write control sequence generation circuit 20 to reduce the write window.
  • the width of the increased write window (the duration of the write window is increased) is greater than the width of the decreased write window.
  • the calibration verification circuit 10 may control the read/write control sequence generation circuit 20 to reduce the read window. Due to the current clock cycle, the read data can pass through the read window, but the write data cannot pass through the write window. Therefore, when the operating frequency is lower than the preset frequency due to the increase of the write window, the read window can be reduced. The probability that the read data still fails to pass the write window.
  • the calibration verification circuit 10 can control the read/write control sequence generation circuit 20 to reduce the read window and write window. Wherein, the width of the increased write window is greater than the width of the decreased write window.
  • the adjustment gears of the read window and the write window can be stored in advance, and each gear is correspondingly increased or decreased by a certain width.
  • the adjustment gear of the read window is represented by RD_Pn
  • the adjustment gear of the write window is represented by WR_Pn
  • WR_P0 and RD_P0 are 000
  • WR_P1 and RD_P1 are 001
  • WR_P2 and RD_P2 is 010
  • WR_P3 and RD_P3 are 011
  • WR_P4 and RD_P4 are 100
  • WR_P5 and RD_P5 are 101
  • WR_P6 and RD_P6 are 110
  • WR_P7 and RD_P7 are 111.
  • the operating frequency (unit MHz) corresponding to the adjustment gear of the read window and the adjustment gear of the write window can be as follows:
  • one or more adjustment gears can be increased or decreased each time.
  • the adjustment gears for adjusting the read window and the write window can also be coded with other bits binary, and the adjustment gears can also be divided into more gears or less gears, which is not specifically limited in this application.
  • only one gear may be adjusted at a time when the read window and/or the write window is increased.
  • the initial gear position corresponding to the read window in the current clock cycle is RD_P4.
  • the read window can be adjusted to the timing corresponding to RD_P5. If the read window is RD_P5, the read data still cannot pass through the read window. Then adjust the read window to RD_P6.
  • the aforementioned solution includes: firstly increasing the read window, and then decreasing the read window because the operating frequency is lower than the preset frequency; or, first increasing the write window, and then decreasing the read window because the operating frequency is smaller than the preset frequency write window.
  • the number of gears adjusted when the read window or the write window is increased is greater than the number of gears adjusted when the read window or the write window is reduced.
  • the initial gear position corresponding to the read window in the current clock cycle is RD_P0.
  • the preset frequency may be the frequency of the read-write window calibration circuit 100 set by the user as required.
  • the preset frequency may also be the frequency of the FPGA chip set by the user as required.
  • the read/write control timing generation circuit 20 when the read/write control timing generation circuit 20 increases the read window, or increases the write window, or decreases the read window, or decreases the write window, it actually changes the read window or the timing of the write window.
  • the read and write window calibration circuit 100 may calibrate the read window and the write window one or more times until the calibration is successful or the calibration is in error.
  • the adjustment gear of the initial read window may be a non-minimum gear, that is, non-RD_P0
  • the adjustment gear of the initial write window may be a non-minimum gear, That is, not WR_P0.
  • the adjustment gear of the initial read window and the adjustment gear of the initial write window may be the maximum adjustment gear. If the adjustment gear of the initial read window and the initial write window is the maximum gear, the read data still fails to pass the read window, and/or the write data still fails to pass the write window, an output calibration error occurs.
  • the read data cannot pass through the read window, which means that all the read data cannot pass through the read window, or part of the read data cannot pass through the read window.
  • the write data cannot pass through the write window, which means that all the write data cannot pass through the write window, or part of the write data cannot pass through the write window.
  • the embodiment of the present application provides a read-write window calibration circuit 100 .
  • the read-write window calibration circuit 100 includes a calibration verification circuit 10 and a read-write control sequence generation circuit 20 .
  • Use the calibration verification circuit 10 to verify whether the read data can pass the read window and whether the write data can pass the write window; when the read data cannot pass the read window, the read window can be increased to make the read data pass through the read window as much as possible.
  • the write window can be increased to make the write data pass through the write window as much as possible; after that, due to the increase in the read window and/or the write window, the operating frequency of the read and write window calibration circuit 100 is reduced.
  • the read window and/or the write window can be appropriately reduced, so that the read data can pass through the read window and the write data can pass through the write window, and the operating frequency satisfies the preset frequency, so that the read and write window calibration circuit 100 Data can be read and written at normal operating frequency.
  • the above process can be automatically completed by the read-write window calibration circuit 100, which is convenient and reliable, and can improve user experience.
  • the calibration verification circuit 10 is also configured to repeatedly verify whether the read data can pass the read window and whether the write data can pass in the next clock cycle when the operating frequency is greater than or equal to the preset frequency. write window.
  • the read window and/or write window is increased, it is not yet certain whether the read data can pass the read window and the write data can pass the write window after the read window and/or write window is increased.
  • the operating frequency of the window calibration circuit 100 satisfies the preset frequency, and it is also possible to verify again whether the read data can pass the read window and whether the write data can pass the write window.
  • the calibration verification circuit 10 is also configured to determine the clock cycle before the current clock cycle when the verification read data cannot pass the read window within the current clock cycle, and the read-write control sequence is generated. Whether circuit 20 reduces the read window.
  • the calibration verification circuit 10 is further configured to control the read/write control sequence generation circuit 20 to increase the read window if the read/write control sequence generation circuit 20 does not reduce the read window in the clock cycle before the current clock cycle.
  • the calibration verification circuit 10 is also configured to output a calibration error in the clock cycle before the current clock cycle if the read-write control sequence generation circuit 20 has reduced the read window.
  • the read and write control sequence generation circuit 20 does not reduce the read window in the clock cycle before the current clock cycle, it means that the operating frequency in the clock cycle before the current clock cycle meets the preset frequency. If the data cannot pass through the read window, the read data can pass through the read window by increasing the read window. Otherwise, in the clock cycle before the current clock cycle, the over-read window may be reduced because the operating frequency is lower than the preset frequency. In this case, even if the read window is increased, the read window may increase, causing the operating frequency to be less than Preset frequency, therefore, without increasing the read window, directly output calibration error, simplifying logic steps.
  • the calibration verification circuit 10 is further configured to determine whether the read and write control sequence generation circuit 20 reduces the write time in the clock cycle before the current clock cycle when verifying that the write data cannot pass the write window within the current clock cycle. window.
  • the calibration verification circuit 10 is further configured to control the read/write control sequence generation circuit 20 to increase the write window if the read/write control sequence generation circuit 20 does not reduce the write window in the clock cycle before the current clock cycle.
  • the calibration verification circuit 10 is further configured to output a calibration error in the clock cycle before the current clock cycle if the read-write control sequence generation circuit has reduced the write window. Specifically, if the read and write control sequence generation circuit 20 does not reduce the read window in the clock cycle before the current clock cycle, it means that the clock cycle before the current clock cycle, the operating frequency meets the preset frequency, in this case, if the write If the data cannot pass through the write window, the write data can pass through the write window by increasing the write window. Otherwise, in the clock cycle before the current clock cycle, the overwrite window may be reduced because the operating frequency is lower than the preset frequency. In this case, even if the write window is increased, the operating frequency may be lower than the preset frequency again due to the increase in the write window. Set the frequency, therefore, without increasing the write window, the calibration error is directly output, and the logic steps are simplified.
  • the read window or the write window when it is verified that the read data cannot pass the read window and the write data cannot pass the write window, it may be determined whether the read window or the write window has been reduced in the clock cycle before the current clock cycle, and if the clock cycle has not been reduced
  • the read window or write window indicates that the operating frequency meets the preset frequency, and the read window or write window can be increased to allow the read data or write data to pass; if the read window or write window is reduced, it indicates the clock cycle before the current clock cycle , because the operating frequency is lower than the preset frequency, the over-read window or write window is reduced. In this case, even if the write window is increased, the read window or write window may increase, causing the operating frequency to be lower than the preset frequency again. Therefore, there is no need to Increase the read window or write window, directly output calibration errors, and simplify the logic steps.
  • the calibration verification circuit 10 is also configured to, when the operating frequency is less than the preset frequency, determine whether the read and write control sequence generation circuit 20 increases the read window in the clock cycle before the current clock cycle. and write window.
  • the calibration verification circuit 10 is further configured to determine whether the read window and/or the write window can be reduced if both the read window and the write window are not increased in a clock cycle before the current clock cycle.
  • the calibration verification circuit 10 is further configured to control the read and write control timing generation circuit to reduce the read window and/or the write window when the read window and/or the write window can be reduced.
  • the calibration verification circuit 10 is further configured to output a calibration error in the clock cycle before the current clock cycle if the read and write control sequence generation circuit has increased the read window and the write window.
  • the calibration verification circuit 10 receives the Freq_overflow signal, and the Freq_overflow signal is at a high level, and the calibration verification circuit 10 determines whether the read window and the write window are increased in the clock cycle before the current clock cycle. big.
  • both the read window and the write window are increased in the clock cycle before the current clock cycle, it means that in the previous clock cycle, because the read data cannot pass the read window and the write data cannot pass the write window, the read window and the write window are increased respectively.
  • Write window in this case, if the read window and/or write window is reduced in the current clock cycle, the read data may not pass the read window, and/or the write data may not pass the write window. Therefore, the direct output calibration Error, no longer reduce the read window and/or write window.
  • the calibration verification circuit 10 can determine whether the read window and/or the write window can be reduced, and if the read window and/or the write window can be reduced, the calibration verification circuit 10 controls the read and write control timing generation circuit 20 to reduce the read window and/or the write window ; If the read window and write window cannot be reduced, the output calibration is wrong.
  • neither the read window nor the write window is increased in a clock cycle prior to the current clock cycle, including: in a clock cycle prior to the current clock cycle, the read window is increased but the write window is not increased; or, In the clock cycle before the current clock cycle, the write window is increased, but the read window is not increased; or, in the clock cycle before the current clock cycle, neither the read window nor the write window is increased.
  • the calibration error can be output directly, simplifying the logic steps; if both the read window and the write window have not been enlarged, it can be determined whether the read window and/or the write window can be further reduced, and if so, reduce the read window and/or the write window. Or write windows, otherwise, the output calibration is wrong, simplifying the logic steps.
  • the read/write window calibration circuit 100 further includes an environment monitoring circuit 40 .
  • the environmental monitoring circuit 40 is configured to acquire the environmental monitoring signal, and send the environmental monitoring signal to the calibration verification circuit 10 when the environmental monitoring signal does not satisfy the preset signal.
  • the calibration verification circuit 10 is further configured to receive the environmental monitoring signal, and to verify whether the read data can pass the read window and whether the write data can pass the write window in a new clock cycle.
  • the environment monitoring signal may be the temperature and voltage of the current working environment of the read/write window calibration circuit 100
  • the preset signal may be the corresponding preset temperature and preset voltage
  • the environment monitoring signal can be sent to the calibration verification circuit 10, and the calibration verification circuit 10 can be used to verify whether the read data is The read window or the write window can be adjusted through the read window and whether the write data can pass through the write window.
  • the preset temperature may have a certain preset temperature range, and the temperature of the current working environment does not meet the preset temperature, including: the temperature of the current working environment is greater than the upper limit of the preset temperature range, or the temperature of the current working environment is lower than the preset temperature. Sets the lower limit of the temperature range.
  • the preset voltage may have a certain preset voltage range, and the voltage of the current working environment does not meet the preset voltage, including: the voltage of the current working environment is greater than the upper limit of the preset voltage range, or the voltage of the current working environment is less than the preset voltage range lower limit of .
  • the environment monitoring signal does not meet the preset signal, it may also be that the difference between the current working environment temperature and the previously measured ambient temperature exceeds the preset signal, or the current working environment voltage and the previously measured The difference in ambient voltage exceeds the preset signal.
  • the environment monitoring circuit 40 may include a temperature detection circuit, a voltage detection circuit, and a comparator.
  • the temperature detection circuit is used to detect the temperature of the current working environment
  • the voltage detection circuit is used to detect the voltage of the current environment
  • the comparator is used to detect the current environment.
  • the temperature of the current working environment is compared with the previously measured ambient temperature. If the difference between the two is greater than the preset signal, the environment monitoring signal does not meet the preset signal, or the comparator is used to compare the voltage of the current working environment with the previous one.
  • the ambient voltages measured once are compared, and if the difference between the two is greater than the preset signal, the environment monitoring signal does not meet the preset signal.
  • the timing of the read window and the write window may also be affected, or the transmission of read data or write data may be affected. Therefore, in the environment When the monitoring signal does not meet the preset signal, the environmental monitoring signal can be sent to the calibration verification circuit 10, and the calibration verification circuit 10 is used to verify whether the read data can pass the read window and whether the write data can pass the write window, and then the read window or write window can be verified. Make adjustments.
  • the read-write window calibration circuit further includes a user calibration circuit.
  • the user calibration circuit is configured to send the user calibration signal to the read-write control timing generation circuit 20 .
  • the read-write control timing generation circuit 20 is further configured to receive a user calibration signal, and adjust the read window and/or the write window according to the user calibration signal.
  • the foregoing embodiment describes an embodiment in which the read and write window calibration circuit 100 automatically adjusts the read window and the write window, but in this embodiment of the present application, the user can also manually adjust the read window and the write window.
  • the user can trigger the user calibration circuit to send the user calibration signals User_adjust_en and User_adjust_wrrd to the read/write control sequence generation circuit 20.
  • the read/write control sequence generation circuit 20 starts to work and adjusts according to User_adjust_wrrd Read window and/or write window.
  • the user calibration signal User_adjust_wrrd includes increasing the read window, increasing the write window, decreasing the read window, and decreasing the write window.
  • the calibration verification circuit 10 when the user sends a user calibration signal to the read/write control sequence generation circuit 20 through the user calibration circuit, the calibration verification circuit 10 also controls the read/write control sequence generation circuit 20 to adjust the read window and/or the write window, then The read-write control sequence generation circuit 20 adjusts the read window and/or the write window according to the user calibration signal sent by the user calibration circuit, or the read-write control sequence generation circuit 20 adjusts the read window and/or the write window according to the Adjust_en signal, the adjust_rd signal, and the Adjust_wr signal sent by the calibration verification circuit 10 Adjust the read window and/or write window.
  • the user can also manually adjust the read window and/or the write window according to his wishes.
  • the read/write window calibration circuit 100 further includes a read/write window configuration adjustment circuit 50 and a configuration memory 60 .
  • the read-write window configuration adjustment circuit 50 is configured to receive the adjustment signal sent by the calibration verification circuit 10 when the read data cannot pass the read window, and/or the write data cannot pass through the write window, and call the adjustment information according to the adjustment signal , the adjustment information is sent to the configuration memory 60 .
  • the configuration memory 60 is configured to receive the adjustment information, call the configuration information corresponding to the adjustment information, and send the configuration information to the read-write control sequence generation circuit 20 .
  • the read and write control timing generation circuit 20 is further configured to adjust the read window and/or the write window according to the configuration information.
  • the calibration verification circuit 10 sends an adjustment signal Adjust_en to the read and write window configuration adjustment circuit 50, when the adjustment signal Adjust_en is at a high level , the read-write window configuration adjustment circuit 50 works and calls the adjustment information, and then sends the adjustment information to the configuration memory 60; after the configuration memory 60 receives the adjustment information, it calls the configuration information corresponding to the adjustment information, and sends the configuration information to the read-write
  • the control timing generation circuit 20 is controlled, and the read and write control timing generation circuit 20 adjusts the timing of the read window and/or the write window according to the configuration information, so as to adjust the read window and/or the write window.
  • the adjustment information may be the adjustment gears of the read window and the write window.
  • the adjustment gear corresponding to the initial adjustment information of the read window is RD_P0.
  • the read/write window configuration adjustment circuit 50 receives the adjustment signal Adjust_en, It is determined that the adjustment gear corresponding to the adjusted adjustment information is RD_P1.
  • the configuration information may be information corresponding to the adjustment information for adjusting the timing of the read window and the write window.
  • the adjustment information may be stored in the read/write window configuration adjustment circuit 50 in advance, and the configuration information may be stored in the configuration memory 60 in advance.
  • the adjustment information when it is determined that the read data cannot pass the read window, and/or the write data cannot pass the write window, the adjustment information may be called from the read/write window configuration adjustment circuit 50, and the configuration may be called from the configuration memory 60. information, and then use the read/write control timing generation circuit 20 to adjust the timing of the read window and/or the write window according to the configuration information.
  • an embodiment of the present application further provides a memory 1000.
  • the memory 1000 includes a plurality of storage units 200 and the read-write window calibration circuit 100 described in any of the foregoing embodiments.
  • the read-write window calibration circuit 100 is used for calibration The read window and the write window of the storage unit 200 .
  • the memory cells 200 may correspond to the read/write window calibration circuits 100 one-to-one, and one read/write window calibration circuit 100 is used to calibrate the read window and the write window of one memory cell.
  • the memory cell 200 may include a read control circuit, a write control circuit, and a memory array.
  • the read control circuit and the storage array are turned on, and the read control circuit stores the read data into the storage array through the bit line;
  • the write control circuit conducts with the storage array, and the write control circuit stores the write data into the storage array through the bit line.
  • the storage array When the word line between the storage array and the calibration verification circuit 10 is at a high level, the storage array sends the stored read data and write data to the calibration verification circuit 10 through the bit line between the storage array and the calibration verification circuit 10 for calibration
  • the verification circuit 10 verifies whether the read data can pass through the read window and whether the write data can pass through the write window.
  • the memory may be a static random-access memory (Static Random-Access Memory, SRAM), and the plurality of storage units 200 of the SRAM are programmable block memory (Block RAM, BRAM for short).
  • SRAM static random-access memory
  • BRAM programmable block memory
  • an embodiment of the present application may further provide an FPGA chip 10000 including the memory 1000 described in any of the foregoing embodiments.
  • the FPGA chip 10000 may further include a logic circuit 2000 .
  • the logic circuit 200 can store data in the memory 1000 and can also retrieve data from the memory 1000 .
  • Embodiments of the present application provide an FPGA chip 10000.
  • FPGA chip 10000 For other explanations and beneficial effects, reference may be made to the foregoing embodiments, which will not be repeated here.
  • an embodiment of the present application provides a method for calibrating a read-write window, including:
  • the calibration verification circuit 10 verifies whether the read data can pass the read window and whether the write data can pass the write window in the current clock cycle.
  • the read-write control sequence generation circuit 20 increases the read window.
  • the calibration verification circuit 10 obtains the operating frequency of the read-write window calibration circuit, and when the operating frequency is less than the preset frequency, controls the read-write control sequence generation circuit 20 to reduce the read window and/or the write window, and repeats in the next clock cycle Verify that read data can pass the read window and write data can pass the write window.
  • step S140 may include controlling the read/write control sequence generation circuit 20 to reduce the write window when the operating frequency is less than the preset frequency.
  • step S140 may include controlling the read/write control sequence generation circuit 20 to reduce the read window when the operating frequency is less than the preset frequency.
  • the read-write window calibration method may further include: in the next clock cycle, repeatedly verifying whether the read data can pass the read window and whether the write data can pass Able to write through the window.
  • the read-write window calibration method may further include: determining a clock cycle before the current clock cycle, Whether the read-write control sequence generation circuit 20 reduces the read window; in the clock cycle before the current clock cycle, if the read-write control sequence generation circuit 20 does not reduce the read window, then the read-write control sequence generation circuit 20 is controlled to increase the read window; In the clock cycle before the current clock cycle, if the read-write control timing generation circuit 20 has reduced the read window, the output calibration is in error.
  • the read-write window calibration method may further include: determining a clock cycle before the current clock cycle, Whether the read-write control sequence generation circuit 20 reduces the write window; in the clock cycle before the current clock cycle, if the read-write control sequence generation circuit 20 does not reduce the write window, then the read-write control sequence generation circuit 20 is controlled to increase the write window; In the clock cycle before the current clock cycle, if the read-write control sequence generation circuit 20 has reduced the write window, the output calibration is in error.
  • the read-write window calibration method may further include: determining a clock cycle before the current clock cycle, whether the read-write control sequence generation circuit 20 is Increase the read window and the write window; in the clock cycle before the current clock cycle, if both the read window and the write window are not increased, determine whether the read window and/or the write window can be reduced; During the read window and/or the write window, control the read/write control sequence generation circuit 20 to reduce the read window and/or write; in the clock cycle before the current clock cycle, if the read/write control sequence generation circuit 20 has increased the read window and the write window, the output calibration error.

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  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

The embodiments of the present application relate to the technical field of integrated circuits. Provided are a read/write window calibration circuit and method, a memory and an FPGA chip. A read window and a write window can be automatically adjusted, such that in cases where the working frequency of the read/write window calibration circuit satisfies a preset frequency, read data can pass through the read window, and write data can pass through the write window. The read/write window calibration circuit comprises: a calibration verification circuit which verifies, within a current clock period, whether read data and write data can pass through a write window and a read window; a read/write control timing generation circuit which increases the read window when the read data cannot pass through the read window, and increases the write window when the write data cannot pass through the write window; and a calibration verification circuit which acquires the working frequency of the read/write window calibration circuit, and when the working frequency is less than a preset frequency, controls the read/write control timing generation circuit to decrease the read window and/or the write window, and repeatedly verifies, within a next clock period, whether the read data can pass through the read window and whether the write data can pass through the write window.

Description

读写窗口校准电路及方法、存储器、FPGA芯片Read-write window calibration circuit and method, memory, FPGA chip
交叉引用cross reference
本申请要求2020年12月31日递交的发明名称为“读写窗口校准电路及方法、存储器、FPGA芯片”的申请号2020116337909的在先申请优先权,上述在先申请的内容以引入的方式并入本文本中。This application claims the priority of the prior application with the title of "Reading and Writing Window Calibration Circuit and Method, Memory, FPGA Chip" filed on December 31, 2020, and the priority of the prior application No. 2020116337909, the contents of the aforementioned prior application are incorporated by reference into this text.
技术领域technical field
本申请涉及集成电路技术领域,尤其涉及一种读写窗口校准电路及方法、存储器、FPGA芯片。The present application relates to the technical field of integrated circuits, and in particular, to a read-write window calibration circuit and method, a memory, and an FPGA chip.
背景技术Background technique
现场可编程门阵列(Field-Programmable Gate Array,简称FPGA)包含大量的存储器,存储器的每个存储单元的读和写都是在单个时钟周期内完成的。Field-Programmable Gate Array (FPGA) contains a large amount of memory, and the reading and writing of each storage unit of the memory are completed in a single clock cycle.
随着FPGA芯片的规模达到千万门级以后,工艺漂移和制造缺陷风险也越来越高,经常出现存储单元的读/写窗口与读/写数据失配的问题,从而导致读、写功能失效,影响整颗FPGA芯片的功能实现。As the scale of FPGA chips reaches tens of millions of gates, the risk of process drift and manufacturing defects is also getting higher and higher, and the problem of mismatch between the read/write window of the memory cell and the read/write data often occurs, resulting in read and write functions. Failure, affecting the functional realization of the entire FPGA chip.
发明内容SUMMARY OF THE INVENTION
本申请实施例提供了一种读写窗口校准电路及方法、存储器、FPGA芯片,以解决上述问题。Embodiments of the present application provide a read-write window calibration circuit and method, a memory, and an FPGA chip to solve the above problems.
第一方面,提供一种读写窗口校准电路,包括校准验证电路和读写控制时序生成电路。校准验证电路,被配置为在当前时钟周期内,验证读数据是否能通过读窗口、写数据是否能通过写窗口。读写控制时序生成电路,被配置为当读数据不能通过读窗口时,增大读窗口。读写控制时序生成电路,还被配置为当写数据不能通过写窗口时,增大写窗口。校准验证电路,还被配置为获取读写窗口校准电路的工作频率,当工作频率小于预设频率时,控制读写控制时序生成电路减小读窗口和/或所述写窗口,并在下一个时钟周期,重复验证读数据是否能通过读窗口、写数据是否能通过写窗口。In a first aspect, a read-write window calibration circuit is provided, including a calibration verification circuit and a read-write control sequence generation circuit. The calibration verification circuit is configured to verify whether the read data can pass the read window and the write data can pass the write window in the current clock cycle. The read-write control timing generation circuit is configured to increase the read window when the read data cannot pass through the read window. The read and write control timing generation circuit is further configured to increase the write window when the write data cannot pass through the write window. The calibration verification circuit is further configured to obtain the operating frequency of the read-write window calibration circuit, and when the operating frequency is less than the preset frequency, controls the read-write control sequence generation circuit to reduce the read window and/or the write window, and at the next clock cycle, and repeatedly verify whether the read data can pass the read window and whether the write data can pass the write window.
第二方面,提供一种存储器,包括多个存储单元以及第一方面所述的读写窗口校准电路,读写窗口校准电路用于校准存储单元的读窗口以及写窗口。In a second aspect, a memory is provided, comprising a plurality of storage units and the read/write window calibration circuit described in the first aspect, where the read/write window calibration circuit is used to calibrate a read window and a write window of the storage unit.
第三方面,提供一种FPGA芯片,包括第二方面所述的存储器。In a third aspect, an FPGA chip is provided, including the memory described in the second aspect.
第四方面,提供一种读写窗口校准方法,包括:校准验证电路在当前时钟周期内,验证读数据是否能通过读窗口、写数据是否能通过写窗口;当读数据不能通过所述读窗口时,读写控制时序生成电路增大读窗口;当写数据不能通过写窗口时,读写控制时序生成电路增大写窗口;校准验证电路获取读写窗口校准电路的工作频率,当工作频率小于预设频率时,控制读写控制时序生成电路减小读窗口和/或写窗口,并在下一个时钟周期,重复验证读数据是否能通过读窗口、写数据是否能通过写窗口。In a fourth aspect, a method for calibrating a read-write window is provided, comprising: a calibration verification circuit verifies, within a current clock cycle, whether read data can pass the read window and whether write data can pass the write window; when the read data cannot pass the read window When the read-write control sequence generation circuit is used to increase the read window; when the write data cannot pass the write window, the read-write control sequence generation circuit increases the write window; the calibration verification circuit obtains the operating frequency of the read-write window calibration circuit. When the frequency is set, the read and write control sequence generation circuit is controlled to reduce the read window and/or the write window, and in the next clock cycle, it is repeatedly verified whether the read data can pass the read window and whether the write data can pass the write window.
本申请实施例提供的读写窗口校准电路及方法、存储器、FPGA芯片中,读写窗口校准电路包括校准验证电路和读写控制时序生成电路。利用校准验证电路验证读数据是 否可以通过读窗口、写数据是否可以通过写窗口;当读数据不能通过读窗口时,可以增大读窗口,使读数据尽可能多地通过读窗口,当写数据不能通过写窗口时,可以增大写窗口,使写数据尽可能多地通过写窗口;之后,由于增大读窗口和/或写窗口,导致读写窗口校准电路的工作频率减小,若工作频率小于预设频率,可以适当减小读窗口和/或写窗口,使得读数据可以通过读窗口、写数据可以通过写窗口,且工作频率满足预设频率,从而使得读写窗口校准电路可以在正常工作频率下,读写数据。上述过程可以由读写窗口校准电路自动完成,方便且可靠,可以提高用户体验。In the read-write window calibration circuit and method, the memory, and the FPGA chip provided by the embodiments of the present application, the read-write window calibration circuit includes a calibration verification circuit and a read-write control sequence generation circuit. Use the calibration verification circuit to verify whether the read data can pass the read window and whether the write data can pass the write window; when the read data cannot pass the read window, the read window can be increased to make the read data pass through the read window as much as possible. When the write window cannot be passed, the write window can be increased to make the write data pass through the write window as much as possible; after that, due to the increase of the read window and/or the write window, the operating frequency of the read and write window calibration circuit is reduced. If the frequency is less than the preset frequency, the read window and/or the write window can be appropriately reduced, so that the read data can pass through the read window and the write data can pass through the write window, and the operating frequency meets the preset frequency, so that the read and write window calibration circuit can operate normally. At the working frequency, read and write data. The above process can be automatically completed by the read-write window calibration circuit, which is convenient and reliable, and can improve user experience.
附图说明Description of drawings
为了更清楚地说明本申请实施例的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,应当理解,以下附图仅示出了本申请的某些实施例,因此不应被看作是对范围的限定,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他相关的附图。In order to illustrate the technical solutions of the embodiments of the present application more clearly, the following drawings will briefly introduce the drawings that need to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore do not It should be regarded as a limitation of the scope, and for those of ordinary skill in the art, other related drawings can also be obtained according to these drawings without any creative effort.
图1为本申请实施例提供的读写窗口校准电路的电路连接关系图;1 is a circuit connection diagram of a read-write window calibration circuit provided by an embodiment of the present application;
图2为本申请实施例提供的读写窗口校准电路的工作过程图;2 is a working process diagram of a read-write window calibration circuit provided by an embodiment of the present application;
图3为本申请实施例提供的读写窗口校准电路的工作过程图;3 is a working process diagram of a read-write window calibration circuit provided by an embodiment of the present application;
图4为本申请实施例提供的读写窗口校准电路的工作过程图;4 is a working process diagram of a read-write window calibration circuit provided by an embodiment of the present application;
图5为本申请实施例提供的读写窗口校准电路的工作过程图;5 is a working process diagram of a read-write window calibration circuit provided by an embodiment of the present application;
图6为本申请实施例提供的读写窗口校准电路的工作过程图;6 is a working process diagram of a read-write window calibration circuit provided by an embodiment of the present application;
图7为本申请实施例提供的存储器各模块的关系图;FIG. 7 is a relationship diagram of each module of a memory provided by an embodiment of the present application;
图8为本申请实施例提供的FPGA芯片各模块的关系图;FIG. 8 is a relationship diagram of each module of an FPGA chip provided by an embodiment of the present application;
图9为本申请实施例提供的读写窗口校准方法的流程示意图。FIG. 9 is a schematic flowchart of a read-write window calibration method provided by an embodiment of the present application.
附图标记:Reference number:
10000-FPGA芯片;1000-存储器;100-读写窗口校准电路;10-校准验证电路;20-读写控制时序生成电路;30-状态寄存器;40-环境监测电路;50-读写窗口配置调整电路;60-配置存储器;200-存储单元。10000-FPGA chip; 1000-memory; 100-read-write window calibration circuit; 10-calibration verification circuit; 20-read-write control sequence generation circuit; 30-status register; 40-environmental monitoring circuit; 50-read-write window configuration adjustment circuit; 60-configuration memory; 200-storage unit.
具体实施方式Detailed ways
为使本申请实施例的目的、技术方案和优点更加清楚,下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本申请一部分实施例,而不是全部的实施例。通常在此处附图中描述和示出的本申请实施例的组件可以以各种不同的配置来布置和设计。需要说明的是,在不冲突的情况下,本申请的实施例中的特征可以相互结合。In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of the present application, but not all of the embodiments. The components of the embodiments of the present application generally described and illustrated in the drawings herein may be arranged and designed in a variety of different configurations. It should be noted that the features in the embodiments of the present application may be combined with each other under the condition of no conflict.
如图1所示,本申请实施例提供一种读写窗口校准电路100,包括校准验证电路10和读写控制时序生成电路20。As shown in FIG. 1 , an embodiment of the present application provides a read-write window calibration circuit 100 , which includes a calibration verification circuit 10 and a read-write control sequence generation circuit 20 .
校准验证电路10,被配置为在当前时钟周期内,验证读数据是否能通过读窗口、写数据是否能通过写窗口。读写控制时序生成电路20,被配置为当读数据不能通过读窗口时,增大读窗口,当写数据不能通过写窗口时,增大写窗口。校准验证电路10,还被配置为获取读写窗口校准电路100的工作频率,当工作频率小于预设频率时,控制读写控制时序生成电路减小读窗口和/或写窗口,并在下一个时钟周期,重复验证读数据是否能 通过读窗口、写数据是否能通过写窗口。The calibration verification circuit 10 is configured to verify whether the read data can pass the read window and whether the write data can pass the write window in the current clock cycle. The read/write control timing generation circuit 20 is configured to increase the read window when the read data cannot pass the read window, and to increase the write window when the write data cannot pass the write window. The calibration verification circuit 10 is further configured to obtain the operating frequency of the read-write window calibration circuit 100, and when the operating frequency is less than the preset frequency, control the read-write control sequence generation circuit to reduce the read window and/or the write window, and at the next clock cycle, and repeatedly verify whether the read data can pass the read window and whether the write data can pass the write window.
在此基础上,读写窗口校准电路100还可以包括状态寄存器30,状态寄存器30用于存储校准验证电路10验证的结果。On this basis, the read-write window calibration circuit 100 may further include a status register 30 for storing the verification result of the calibration verification circuit 10 .
具体的,如图1和图2所示,在配置编程完成后,读写控制时序生成电路20可以向校准验证电路10发送Verify_en信号,当Verify_en信号为高电平时,在Verify_en信号的作用下,校准验证电路10开始验证读数据是否能通过读窗口、写数据是否能通过写窗口。Specifically, as shown in FIG. 1 and FIG. 2 , after the configuration programming is completed, the read/write control sequence generation circuit 20 can send the Verify_en signal to the calibration verification circuit 10. When the Verify_en signal is at a high level, under the action of the Verify_en signal, The calibration verification circuit 10 starts to verify whether the read data can pass the read window and whether the write data can pass the write window.
当读数据不能通过读窗口时,说明读窗口过小,导致读数据不能完全通过读窗口,校准验证电路10可以向读写控制时序生成电路20发送Adjust_en信号和Adjust_rd信号,当Adjust_en信号和Adjust_rd信号为高电平时,读写控制时序生成电路20接收到Adjust_en信号时,准备工作,读写控制时序生成电路20接收到Adjust_rd信号时,开始调节读窗口的时序,增大读窗口。When the read data cannot pass through the read window, it means that the read window is too small, resulting in that the read data cannot completely pass through the read window. The calibration verification circuit 10 can send the Adjust_en signal and the Adjust_rd signal to the read-write control sequence generation circuit 20. When the Adjust_en signal and the Adjust_rd signal When the level is high, the read/write control timing generation circuit 20 is ready to work when receiving the Adjust_en signal, and when the read/write control timing generation circuit 20 receives the Adjust_rd signal, it starts to adjust the timing of the read window to increase the read window.
当写数据不能通过读窗口时,说明写窗口过小,导致写数据不能完全通过写窗口,校准验证电路10可以向读写控制时序生成电路20发送Adjust_en信号和Adjust_wr信号,当Adjust_en信号和Adjust_wr信号为高电平时,读写控制时序生成电路20接收到Adjust_en信号时,准备工作,读写控制时序生成电路20接收到Adjust_wr信号时,开始调节写窗口的时序,增大写窗口。When the write data cannot pass the read window, it means that the write window is too small, so that the write data cannot pass through the write window completely. The calibration verification circuit 10 can send the Adjust_en signal and the Adjust_wr signal to the read and write control timing generation circuit 20. When the Adjust_en signal and the Adjust_wr signal When the level is high, the read/write control sequence generation circuit 20 is ready to work when receiving the Adjust_en signal, and when the read/write control sequence generation circuit 20 receives the Adjust_wr signal, it starts to adjust the timing of the write window and increase the write window.
在增大读窗口和/或写窗口后,读窗口和/或写窗口所占的时间变长,导致读写窗口校准电路100的工作频率降低,当工作频率小于预设频率时,校准验证电路10接收到Freq_overflow信号,在Freq_overflow信号为高电平时,校准验证电路10可以控制读写控制时序生成电路20减小读窗口和/或写窗口,并在下一个时钟周期,重复验证读数据是否能通过读窗口、写数据是否能通过写窗口。若读数据能通过读窗口、且写数据能通过写窗口,则如图3所示,输出校准成功,并停止验证,校准验证电路10向状态寄存器30发送Verify_successed信号,状态寄存器30将验证成功的状态存储起来;若读数据不能通过读窗口,和/或,写数据不能通过写窗口,则按照图1所示的流程,继续增大读窗口和/或写窗口。当校准成功时,Verify_en信号从高电平变为低电平。After the read window and/or the write window is increased, the time occupied by the read window and/or the write window becomes longer, resulting in a decrease in the operating frequency of the read/write window calibration circuit 100. When the operating frequency is less than the preset frequency, the calibration verification circuit 10 receives the Freq_overflow signal, when the Freq_overflow signal is at a high level, the calibration verification circuit 10 can control the read and write control sequence generation circuit 20 to reduce the read window and/or the write window, and in the next clock cycle, repeatedly verify whether the read data can pass through. Whether the read window and write data can pass through the write window. If the read data can pass the read window and the write data can pass the write window, as shown in FIG. 3 , the output calibration is successful, and the verification is stopped. The calibration verification circuit 10 sends the Verify_successed signal to the status register 30, and the status register 30 will verify the successful The state is stored; if the read data cannot pass through the read window, and/or the write data cannot pass through the write window, continue to increase the read window and/or the write window according to the process shown in FIG. 1 . When the calibration is successful, the Verify_en signal goes from high to low.
上述过程中,校准验证电路10和读写控制时序生成电路20均在高电平的信号下开始工作,这与校准验证电路10和读写控制时序生成电路20的自身特性有关,当然,也可以更改校准验证电路10和读写控制时序生成电路20的特性,使校准验证电路10和读写控制时序生成电路20在接收到低电平的信号时工作,本申请实施例对此不作特殊限定,下文同样适用。In the above-mentioned process, the calibration verification circuit 10 and the read-write control sequence generation circuit 20 both start to work under a high-level signal, which is related to the characteristics of the calibration verification circuit 10 and the read-write control sequence generation circuit 20. Of course, it can also be The characteristics of the calibration verification circuit 10 and the read/write control sequence generation circuit 20 are changed, so that the calibration verification circuit 10 and the read/write control sequence generation circuit 20 work when receiving a low-level signal, which is not particularly limited in the embodiment of the present application. The same applies below.
在一些实施例中,当工作频率小于预设频率时,校准验证电路10可以控制读写控制时序生成电路20减小读窗口和/或写窗口,包括:In some embodiments, when the operating frequency is less than the preset frequency, the calibration verification circuit 10 can control the read and write control timing generation circuit 20 to reduce the read window and/or the write window, including:
在读数据不能通过读窗口时,读写控制时序生成电路20增大读窗口的情况下,若工作频率小于预设频率,则校准验证电路10可以控制读写控制时序生成电路20减小读窗口。其中,增大的读窗口的宽度(读窗口时长增大),大于减小的读窗口的宽度。When the read data cannot pass the read window, the read/write control sequence generation circuit 20 increases the read window, and if the operating frequency is less than the preset frequency, the calibration verification circuit 10 can control the read/write control sequence generation circuit 20 to reduce the read window. Wherein, the width of the increased read window (the duration of the read window is increased) is greater than the width of the decreased read window.
在读数据不能通过读窗口时,读写控制时序生成电路20增大读窗口的情况下,若工作频率小于预设频率,则校准验证电路10可以控制读写控制时序生成电路20减小写窗口。由于再当前时钟周期,写数据可以通过写窗口,而读数据不能通过读窗口,因此,在因增大读窗口而导致工作频率小于预设频率时,可以减小写窗口,降低增大读窗口后,读数据还是不能通过读窗口的几率。When the read data cannot pass the read window, the read/write control sequence generation circuit 20 increases the read window, and if the operating frequency is less than the preset frequency, the calibration verification circuit 10 can control the read/write control sequence generation circuit 20 to reduce the write window. Due to the current clock cycle, the write data can pass through the write window, but the read data cannot pass through the read window. Therefore, when the operating frequency is lower than the preset frequency due to the increase of the read window, the write window can be reduced, and the increase of the read window can be reduced. After that, the read data still fails to pass the read window.
在读数据不能通过读窗口时,读写控制时序生成电路20增大读窗口的情况下,若工作频率小于预设频率,则校准验证电路10可以控制读写控制时序生成电路20减小读窗口和写窗口。其中,增大的读窗口的宽度,大于减小的读窗口的宽度。When the read data cannot pass the read window, and the read/write control sequence generation circuit 20 increases the read window, if the operating frequency is less than the preset frequency, the calibration verification circuit 10 may control the read/write control sequence generation circuit 20 to reduce the read window and write window. Wherein, the width of the increased read window is greater than the width of the decreased read window.
在写数据不能通过写窗口时,读写控制时序生成电路20增大写窗口的情况下,若工作频率小于预设频率,则校准验证电路10可以控制读写控制时序生成电路20减小写窗口。其中,增大的写窗口的宽度(写窗口时长增大),大于减小的写窗口的宽度。When the write data cannot pass the write window and the read/write control sequence generation circuit 20 increases the write window, if the operating frequency is lower than the preset frequency, the calibration verification circuit 10 can control the read/write control sequence generation circuit 20 to reduce the write window. Wherein, the width of the increased write window (the duration of the write window is increased) is greater than the width of the decreased write window.
在写数据不能通过写窗口时,读写控制时序生成电路20增大写窗口的情况下,若工作频率小于预设频率,则校准验证电路10可以控制读写控制时序生成电路20减小读窗口。由于再当前时钟周期,读数据可以通过读窗口,而写数据不能通过写窗口,因此,在因增大写窗口而导致工作频率小于预设频率时,可以减小读窗口,降低增大写窗口后,读数据还是不能通过写窗口的几率。When the write data cannot pass the write window, and the read/write control sequence generation circuit 20 increases the write window, if the operating frequency is less than the preset frequency, the calibration verification circuit 10 may control the read/write control sequence generation circuit 20 to reduce the read window. Due to the current clock cycle, the read data can pass through the read window, but the write data cannot pass through the write window. Therefore, when the operating frequency is lower than the preset frequency due to the increase of the write window, the read window can be reduced. The probability that the read data still fails to pass the write window.
在写数据不能通过写窗口时,读写控制时序生成电路20增大写窗口的情况下,若工作频率小于预设频率,则校准验证电路10可以控制读写控制时序生成电路20减小读窗口和写窗口。其中,增大的写窗口的宽度,大于减小的写窗口的宽度。When the write data cannot pass through the write window, in the case where the read/write control sequence generation circuit 20 increases the write window, if the operating frequency is less than the preset frequency, the calibration verification circuit 10 can control the read/write control sequence generation circuit 20 to reduce the read window and write window. Wherein, the width of the increased write window is greater than the width of the decreased write window.
在一些实施例中,可以预先存储读窗口和写窗口的调节档位,每个档位对应增大或减小一定宽度。In some embodiments, the adjustment gears of the read window and the write window can be stored in advance, and each gear is correspondingly increased or decreased by a certain width.
示例的,假设调节档位以3位的二进制进行编码,读窗口的调节档位用RD_Pn表示,写窗口的调节档位用WR_Pn表示,WR_P0和RD_P0为000,WR_P1和RD_P1为001,WR_P2和RD_P2为010,WR_P3和RD_P3为011,WR_P4和RD_P4为100,WR_P5和RD_P5为101,WR_P6和RD_P6为110,WR_P7和RD_P7为111。读窗口的调节档位和写窗口的调节档位对应的工作频率(单位MHz)可以如下表:For example, assuming that the adjustment gear is coded in 3-bit binary, the adjustment gear of the read window is represented by RD_Pn, the adjustment gear of the write window is represented by WR_Pn, WR_P0 and RD_P0 are 000, WR_P1 and RD_P1 are 001, WR_P2 and RD_P2 is 010, WR_P3 and RD_P3 are 011, WR_P4 and RD_P4 are 100, WR_P5 and RD_P5 are 101, WR_P6 and RD_P6 are 110, and WR_P7 and RD_P7 are 111. The operating frequency (unit MHz) corresponding to the adjustment gear of the read window and the adjustment gear of the write window can be as follows:
   WR_P0WR_P0 WR_P1WR_P1 WR_P2WR_P2 WR_P3WR_P3 WR_P4WR_P4 WR_P5WR_P5 WR_P6WR_P6 WR_P7WR_P7
RD_P0RD_P0 600600 550550 500500 450450 400400 350350 320320 300300
RD_P1RD_P1 550550 500500 450450 400400 360360 320320 300300 280280
RD_P2RD_P2 500500 450450 400400 360360 330330 300300 280280 260260
RD_P3RD_P3 450450 400400 360360 330330 300300 280280 260260 240240
RD_P4RD_P4 400400 360360 330330 300300 280280 260260 240240 230230
RD_P5RD_P5 350350 330330 300300 280280 260260 240240 230230 220220
RD_P6RD_P6 320320 300300 280280 260260 240240 230230 220220 210210
RD_P7RD_P7 300300 280280 260260 240240 230230 220220 210210 200200
读写控制时序生成电路20在调节读窗口或写窗口时,每次可以增大或减小一个或多个调节档位。当然,调节读窗口和写窗口的调节档位也可以以其他位二进制进行编码,也可以将调节档位划分成更多档位或更少档位,本申请对此不作特殊限定。When the read-write control sequence generation circuit 20 adjusts the read window or the write window, one or more adjustment gears can be increased or decreased each time. Of course, the adjustment gears for adjusting the read window and the write window can also be coded with other bits binary, and the adjustment gears can also be divided into more gears or less gears, which is not specifically limited in this application.
在一些实施例中,为了防止工作频率过小,不能满足正常工作需求,在增大读窗口和/或写窗口时,一次可以仅调节一个档位。例如,读窗口在当前时钟周期对应的初始档位是RD_P4,在增大读窗口时,可以先将读窗口调节为RD_P5对应的时序,若读窗口为RD_P5时,读数据仍不能通过读窗口,则再将读窗口调节为RD_P6。In some embodiments, in order to prevent the operating frequency from being too low to meet normal operating requirements, only one gear may be adjusted at a time when the read window and/or the write window is increased. For example, the initial gear position corresponding to the read window in the current clock cycle is RD_P4. When increasing the read window, the read window can be adjusted to the timing corresponding to RD_P5. If the read window is RD_P5, the read data still cannot pass through the read window. Then adjust the read window to RD_P6.
在一些实施例中,前述方案包括:先增大读窗口,之后,因工作频率小于预设频率,减小读窗口;或者,先增大写窗口,之后,因工作频率小于预设频率,减小写窗口。在此情况下,增大读窗口或写窗口时调节的档位个数,多于减小读窗口或写窗口时调节的档位个数。In some embodiments, the aforementioned solution includes: firstly increasing the read window, and then decreasing the read window because the operating frequency is lower than the preset frequency; or, first increasing the write window, and then decreasing the read window because the operating frequency is smaller than the preset frequency write window. In this case, the number of gears adjusted when the read window or the write window is increased is greater than the number of gears adjusted when the read window or the write window is reduced.
示例的,读窗口在当前时钟周期对应的初始档位是RD_P0,在增大读窗口时,可以先将读窗口调节为RD_P2;之后,减小读窗口时,可以将读窗口从RD_P2调节到RD_P1。For example, the initial gear position corresponding to the read window in the current clock cycle is RD_P0. When increasing the read window, you can first adjust the read window to RD_P2; then, when reducing the read window, you can adjust the read window from RD_P2 to RD_P1. .
在一些实施例中,预设频率可以是用户根据需要设置的读写窗口校准电路100的频 率。当读写窗口校准电路100应用于FPGA芯片时,预设频率也可以是用户根据需要设置的FPGA芯片的频率。In some embodiments, the preset frequency may be the frequency of the read-write window calibration circuit 100 set by the user as required. When the read-write window calibration circuit 100 is applied to the FPGA chip, the preset frequency may also be the frequency of the FPGA chip set by the user as required.
在一些实施例中,读写控制时序生成电路20在增大读窗口、或增大写窗口、或减小读窗口、或减小写窗口时,实际是对读窗口或写窗口的时序进行更改。In some embodiments, when the read/write control timing generation circuit 20 increases the read window, or increases the write window, or decreases the read window, or decreases the write window, it actually changes the read window or the timing of the write window.
在一些实施例中,读写窗口校准电路100可以对读窗口和写窗口进行一次或多次校准,直至校准成功或者校准出错。In some embodiments, the read and write window calibration circuit 100 may calibrate the read window and the write window one or more times until the calibration is successful or the calibration is in error.
在一些实施例中,在第一次对读窗口和写窗口校准之前,初始读窗口的调节档位可以是非最小档位,即,非RD_P0,初始写窗口的调节档位可以是非最小档位,即,非WR_P0。In some embodiments, before calibrating the read window and the write window for the first time, the adjustment gear of the initial read window may be a non-minimum gear, that is, non-RD_P0, and the adjustment gear of the initial write window may be a non-minimum gear, That is, not WR_P0.
示例的,初始读窗口的调节档位和初始写窗口的调节档位可以是最大调节档位。若初始读窗口和初始写窗口的调节档位为最大档位时,读数据仍不能通过读窗口,和/或,写数据仍不能通过写窗口,则输出校准出错。For example, the adjustment gear of the initial read window and the adjustment gear of the initial write window may be the maximum adjustment gear. If the adjustment gear of the initial read window and the initial write window is the maximum gear, the read data still fails to pass the read window, and/or the write data still fails to pass the write window, an output calibration error occurs.
在一些实施例中,读数据不能通过读窗口,是指:读数据全部不能读窗口,或者,读数据部分不能通过读窗口。In some embodiments, the read data cannot pass through the read window, which means that all the read data cannot pass through the read window, or part of the read data cannot pass through the read window.
写数据不能通过写窗口,是指:写数据全部不能写窗口,或者,写数据部分不能通过写窗口。The write data cannot pass through the write window, which means that all the write data cannot pass through the write window, or part of the write data cannot pass through the write window.
本申请实施例提供一种读写窗口校准电路100,读写窗口校准电路100包括校准验证电路10和读写控制时序生成电路20。利用校准验证电路10验证读数据是否可以通过读窗口、写数据是否可以通过写窗口;当读数据不能通过读窗口时,可以增大读窗口,使读数据尽可能多地通过读窗口,当写数据不能通过写窗口时,可以增大写窗口,使写数据尽可能多地通过写窗口;之后,由于增大读窗口和/或写窗口,导致读写窗口校准电路100的工作频率减小,若工作频率小于预设频率,可以适当减小读窗口和/或写窗口,使得读数据可以通过读窗口、写数据可以通过写窗口,且工作频率满足预设频率,从而使得读写窗口校准电路100可以在正常工作频率下,读写数据。上述过程可以由读写窗口校准电路100自动完成,方便且可靠,可以提高用户体验。The embodiment of the present application provides a read-write window calibration circuit 100 . The read-write window calibration circuit 100 includes a calibration verification circuit 10 and a read-write control sequence generation circuit 20 . Use the calibration verification circuit 10 to verify whether the read data can pass the read window and whether the write data can pass the write window; when the read data cannot pass the read window, the read window can be increased to make the read data pass through the read window as much as possible. When the data cannot pass through the write window, the write window can be increased to make the write data pass through the write window as much as possible; after that, due to the increase in the read window and/or the write window, the operating frequency of the read and write window calibration circuit 100 is reduced. If the operating frequency is less than the preset frequency, the read window and/or the write window can be appropriately reduced, so that the read data can pass through the read window and the write data can pass through the write window, and the operating frequency satisfies the preset frequency, so that the read and write window calibration circuit 100 Data can be read and written at normal operating frequency. The above process can be automatically completed by the read-write window calibration circuit 100, which is convenient and reliable, and can improve user experience.
可选的,如图2所示,校准验证电路10,还被配置为当工作频率大于或等于预设频率时,在下一时钟周期,重复验证读数据是否能通过读窗口、写数据是否能通过写窗口。Optionally, as shown in FIG. 2 , the calibration verification circuit 10 is also configured to repeatedly verify whether the read data can pass the read window and whether the write data can pass in the next clock cycle when the operating frequency is greater than or equal to the preset frequency. write window.
即,由于增大了读窗口和/或写窗口,但尚不确定增大读窗口和/或写窗口后,读数据是否可以通过读窗口、写数据是否可以通过写窗口,因此,即使读写窗口校准电路100的工作频率满足预设频率,也可以再次验证读数据是否能通过读窗口、写数据是否能通过写窗口。That is, since the read window and/or write window is increased, it is not yet certain whether the read data can pass the read window and the write data can pass the write window after the read window and/or write window is increased. The operating frequency of the window calibration circuit 100 satisfies the preset frequency, and it is also possible to verify again whether the read data can pass the read window and whether the write data can pass the write window.
可选的,如图4所示,校准验证电路10,还被配置为当在当前时钟周期内,验证读数据不能通过读窗口时,确定在当前时钟周期之前的时钟周期,读写控制时序生成电路20是否减小读窗口。Optionally, as shown in FIG. 4 , the calibration verification circuit 10 is also configured to determine the clock cycle before the current clock cycle when the verification read data cannot pass the read window within the current clock cycle, and the read-write control sequence is generated. Whether circuit 20 reduces the read window.
校准验证电路10,还被配置为在当前时钟周期之前的时钟周期,若读写控制时序生成电路20未减小读窗口,则控制读写控制时序生成电路20增大读窗口。The calibration verification circuit 10 is further configured to control the read/write control sequence generation circuit 20 to increase the read window if the read/write control sequence generation circuit 20 does not reduce the read window in the clock cycle before the current clock cycle.
校准验证电路10,还被配置为在当前时钟周期之前的时钟周期,若读写控制时序生成电路20已减小读窗口,则输出校准出错。The calibration verification circuit 10 is also configured to output a calibration error in the clock cycle before the current clock cycle if the read-write control sequence generation circuit 20 has reduced the read window.
具体的,若在当前时钟周期之前的时钟周期,读写控制时序生成电路20未减小读窗口,说明在当前时钟周期之前的时钟周期,工作频率满足预设频率,在此情况下,若读数据不能通过读窗口,则可以通过增大读窗口,使读数据通过读窗口。否则,在当前时钟周期之前的时钟周期,可能因工作频率小于预设频率,减小过读窗口,在此情况下,即使增大读窗口,也可能因读窗口增大,导致工作频率再次小于预设频率,因此,无需增大读窗口,直接输出校准出错,简化逻辑步骤。Specifically, if the read and write control sequence generation circuit 20 does not reduce the read window in the clock cycle before the current clock cycle, it means that the operating frequency in the clock cycle before the current clock cycle meets the preset frequency. If the data cannot pass through the read window, the read data can pass through the read window by increasing the read window. Otherwise, in the clock cycle before the current clock cycle, the over-read window may be reduced because the operating frequency is lower than the preset frequency. In this case, even if the read window is increased, the read window may increase, causing the operating frequency to be less than Preset frequency, therefore, without increasing the read window, directly output calibration error, simplifying logic steps.
可选的,校准验证电路10,还被配置为当在当前时钟周期内,验证写数据不能通过 写窗口时,确定在当前时钟周期之前的时钟周期,读写控制时序生成电路20是否减小写窗口。Optionally, the calibration verification circuit 10 is further configured to determine whether the read and write control sequence generation circuit 20 reduces the write time in the clock cycle before the current clock cycle when verifying that the write data cannot pass the write window within the current clock cycle. window.
校准验证电路10,还被配置为在当前时钟周期之前的时钟周期,若读写控制时序生成电路20未减小写窗口,则控制读写控制时序生成电路20增大写窗口。The calibration verification circuit 10 is further configured to control the read/write control sequence generation circuit 20 to increase the write window if the read/write control sequence generation circuit 20 does not reduce the write window in the clock cycle before the current clock cycle.
校准验证电路10,还被配置为在当前时钟周期之前的时钟周期,若读写控制时序生成电路已减小写窗口,则输出校准出错。具体的,若在当前时钟周期之前的时钟周期,读写控制时序生成电路20未减小读窗口,说明在当前时钟周期之前的时钟周期,工作频率满足预设频率,在此情况下,若写数据不能通过写窗口,则可以通过增大写窗口,使写数据通过写窗口。否则,在当前时钟周期之前的时钟周期,可能因工作频率小于预设频率,减小过写窗口,在此情况下,即使增大写窗口,也可能因写窗口增大,导致工作频率再次小于预设频率,因此,无需增大写窗口,直接输出校准出错,简化逻辑步骤。The calibration verification circuit 10 is further configured to output a calibration error in the clock cycle before the current clock cycle if the read-write control sequence generation circuit has reduced the write window. Specifically, if the read and write control sequence generation circuit 20 does not reduce the read window in the clock cycle before the current clock cycle, it means that the clock cycle before the current clock cycle, the operating frequency meets the preset frequency, in this case, if the write If the data cannot pass through the write window, the write data can pass through the write window by increasing the write window. Otherwise, in the clock cycle before the current clock cycle, the overwrite window may be reduced because the operating frequency is lower than the preset frequency. In this case, even if the write window is increased, the operating frequency may be lower than the preset frequency again due to the increase in the write window. Set the frequency, therefore, without increasing the write window, the calibration error is directly output, and the logic steps are simplified.
本申请实施例中,在验证读数据不能通过读窗口、写数据不能通过写窗口时,可以先确定在当前时钟周期之前的时钟周期,是否减小过读窗口或写窗口,若未减小过读窗口或写窗口,说明工作频率满足预设频率,可以增大读窗口或写窗口,使得读数据或写数据通过;若减小过读窗口或写窗口,说明在当前时钟周期之前的时钟周期,因工作频率小于预设频率减小过读窗口或写窗口,在此情况下,即使增大写窗口,也可能因读窗口或写窗口增大,导致工作频率再次小于预设频率,因此,无需增大读窗口或写窗口,直接输出校准出错,简化逻辑步骤。In the embodiment of the present application, when it is verified that the read data cannot pass the read window and the write data cannot pass the write window, it may be determined whether the read window or the write window has been reduced in the clock cycle before the current clock cycle, and if the clock cycle has not been reduced The read window or write window indicates that the operating frequency meets the preset frequency, and the read window or write window can be increased to allow the read data or write data to pass; if the read window or write window is reduced, it indicates the clock cycle before the current clock cycle , because the operating frequency is lower than the preset frequency, the over-read window or write window is reduced. In this case, even if the write window is increased, the read window or write window may increase, causing the operating frequency to be lower than the preset frequency again. Therefore, there is no need to Increase the read window or write window, directly output calibration errors, and simplify the logic steps.
可选的,如图5所示,校准验证电路10,还被配置为当工作频率小于预设频率时,确定在当前时钟周期之前的时钟周期,读写控制时序生成电路20是否增大读窗口和写窗口。Optionally, as shown in FIG. 5 , the calibration verification circuit 10 is also configured to, when the operating frequency is less than the preset frequency, determine whether the read and write control sequence generation circuit 20 increases the read window in the clock cycle before the current clock cycle. and write window.
校准验证电路10,还被配置为在当前时钟周期之前的时钟周期,若读窗口和写窗口未均增大,则确定是否可以减小读窗口和/或写窗口。The calibration verification circuit 10 is further configured to determine whether the read window and/or the write window can be reduced if both the read window and the write window are not increased in a clock cycle before the current clock cycle.
校准验证电路10,还被配置为在可以减小读窗口和/或写窗口时,控制读写控制时序生成电路减小读窗口和/或写窗口。The calibration verification circuit 10 is further configured to control the read and write control timing generation circuit to reduce the read window and/or the write window when the read window and/or the write window can be reduced.
校准验证电路10,还被配置为在当前时钟周期之前的时钟周期,若读写控制时序生成电路已增大读窗口和写窗口,则输出校准出错。The calibration verification circuit 10 is further configured to output a calibration error in the clock cycle before the current clock cycle if the read and write control sequence generation circuit has increased the read window and the write window.
具体的,当工作频率小于预设频率时,校准验证电路10接收Freq_overflow信号,且Freq_overflow信号为高电平,校准验证电路10确定在当前时钟周期之前的时钟周期,读窗口和写窗口是否均增大。Specifically, when the operating frequency is less than the preset frequency, the calibration verification circuit 10 receives the Freq_overflow signal, and the Freq_overflow signal is at a high level, and the calibration verification circuit 10 determines whether the read window and the write window are increased in the clock cycle before the current clock cycle. big.
若在当前时钟周期之前的时钟周期,读窗口和写窗口均增大,则说明在之前的时钟周期,因读数据不能通过读窗口,且写数据不能通过写窗口,分别增大过读窗口和写窗口,在此情况下,若在当前时钟周期再减小读窗口和/或写窗口,又可能导致读数据不能通过读窗口,和/或,写数据不能通过写窗口,因此,直接输出校准出错,不再减小读窗口和/或写窗口。If both the read window and the write window are increased in the clock cycle before the current clock cycle, it means that in the previous clock cycle, because the read data cannot pass the read window and the write data cannot pass the write window, the read window and the write window are increased respectively. Write window, in this case, if the read window and/or write window is reduced in the current clock cycle, the read data may not pass the read window, and/or the write data may not pass the write window. Therefore, the direct output calibration Error, no longer reduce the read window and/or write window.
若在当前时钟周期之前的时钟周期,读窗口和写窗口并未都均增大,则说明在当前时钟周期,至少可以通过减小读窗口或写窗口,来增大工作频率,因此,校准验证电路10可以确定是否可以减小读窗口和/或写窗口,若可以减小读窗口和/或写窗口,则校准验证电路10控制读写控制时序生成电路20减小读窗口和/或写窗口;若不能减小读窗口和写窗口,则输出校准出错。If both the read window and the write window are not increased in the clock cycle before the current clock cycle, it means that in the current clock cycle, the operating frequency can at least be increased by reducing the read window or the write window. Therefore, the calibration verification The circuit 10 can determine whether the read window and/or the write window can be reduced, and if the read window and/or the write window can be reduced, the calibration verification circuit 10 controls the read and write control timing generation circuit 20 to reduce the read window and/or the write window ;If the read window and write window cannot be reduced, the output calibration is wrong.
在一些实施例中,在当前时钟周期之前的时钟周期,读窗口和写窗口未均增大,包括:在当前时钟周期之前的时钟周期,读窗口增大,但写窗口未增大;或者,在当前时钟周期之前的时钟周期,写窗口增大,但读窗口未增大;或者,在当前时钟周期之前的时钟周期,读窗口和写窗口均未增大。In some embodiments, neither the read window nor the write window is increased in a clock cycle prior to the current clock cycle, including: in a clock cycle prior to the current clock cycle, the read window is increased but the write window is not increased; or, In the clock cycle before the current clock cycle, the write window is increased, but the read window is not increased; or, in the clock cycle before the current clock cycle, neither the read window nor the write window is increased.
本申请实施例中,在确定工作频率小于预设频率时,还可以先确定在当前时钟周期之前的时钟周期,读窗口和写窗口是否都增大过,若读窗口和写窗口都增大过,则可以直接输出校准出错,简化逻辑步骤;若读窗口和写窗口并没有都增大过,可以确定是否可以进一步减小读窗口和/或写窗口,如果可以,则减小读窗口和/或写窗口,否则,输出校准出错,简化逻辑步骤。In the embodiment of the present application, when it is determined that the operating frequency is less than the preset frequency, it may also be determined whether the read window and the write window have both increased in the clock cycle before the current clock cycle, and if both the read window and the write window have increased , the calibration error can be output directly, simplifying the logic steps; if both the read window and the write window have not been enlarged, it can be determined whether the read window and/or the write window can be further reduced, and if so, reduce the read window and/or the write window. Or write windows, otherwise, the output calibration is wrong, simplifying the logic steps.
可选的,如图1和图6所示,读写窗口校准电路100还包括环境监测电路40。环境监测电路40,被配置为获取环境监测信号,并在环境监测信号不满足预设信号时,将环境监测信号发送至校准验证电路10。校准验证电路10,还被配置为接收环境监测信号,并在新的时钟周期验证读数据是否能通过读窗口、写数据是否能通过写窗口。Optionally, as shown in FIG. 1 and FIG. 6 , the read/write window calibration circuit 100 further includes an environment monitoring circuit 40 . The environmental monitoring circuit 40 is configured to acquire the environmental monitoring signal, and send the environmental monitoring signal to the calibration verification circuit 10 when the environmental monitoring signal does not satisfy the preset signal. The calibration verification circuit 10 is further configured to receive the environmental monitoring signal, and to verify whether the read data can pass the read window and whether the write data can pass the write window in a new clock cycle.
在一些实施例中,环境监测信号可以是读写窗口校准电路100当前工作环境的温度、电压等,预设信号可以是对应的预设温度和预设电压。In some embodiments, the environment monitoring signal may be the temperature and voltage of the current working environment of the read/write window calibration circuit 100, and the preset signal may be the corresponding preset temperature and preset voltage.
当当前工作环境的温度不满足预设温度,和/或,当前工作环境的电压不满足预设电压时,都可以将环境监测信号发送至校准验证电路10,利用校准验证电路10验证读数据是否能通过读窗口、写数据是否能通过写窗口,进而对读窗口或写窗口进行调节。When the temperature of the current working environment does not meet the preset temperature, and/or the voltage of the current working environment does not meet the preset voltage, the environment monitoring signal can be sent to the calibration verification circuit 10, and the calibration verification circuit 10 can be used to verify whether the read data is The read window or the write window can be adjusted through the read window and whether the write data can pass through the write window.
此处,预设温度可以具有一定的预设温度范围,当前工作环境的温度不满足预设温度,包括:当前工作环境的温度大于预设温度范围的上限,或者,当前工作环境的温度小于预设温度范围的下限。Here, the preset temperature may have a certain preset temperature range, and the temperature of the current working environment does not meet the preset temperature, including: the temperature of the current working environment is greater than the upper limit of the preset temperature range, or the temperature of the current working environment is lower than the preset temperature. Sets the lower limit of the temperature range.
预设电压可以具有一定的预设电压范围,当前工作环境的电压不满足预设电压,包括:当前工作环境的电压大于预设电压范围的上限,或者,当前工作环境的电压小于预设电压范围的下限。The preset voltage may have a certain preset voltage range, and the voltage of the current working environment does not meet the preset voltage, including: the voltage of the current working environment is greater than the upper limit of the preset voltage range, or the voltage of the current working environment is less than the preset voltage range lower limit of .
在一些实施例中,环境监测信号不满足预设信号,还可以是当前工作环境温度与前一次测得的环境温度的差值超出预设信号,或者,当前工作环境电压与前一次测得的环境电压的差值超出预设信号。In some embodiments, the environment monitoring signal does not meet the preset signal, it may also be that the difference between the current working environment temperature and the previously measured ambient temperature exceeds the preset signal, or the current working environment voltage and the previously measured The difference in ambient voltage exceeds the preset signal.
在此情况下,环境监测电路40可以包括温度检测电路、电压检测电路、以及比较器,温度检测电路用于检测当前工作环境的温度,电压检测电路用于检测当前环境的电压,比较器用于对当前工作环境的温度与前一次测得的环境温度进行比较,若二者的差值大于预设信号,则环境监测信号不满足预设信号,或者,比较器用于对当前工作环境的电压与前一次测得的环境电压进行比较,若二者的差值大于预设信号,则环境监测信号不满足预设信号。In this case, the environment monitoring circuit 40 may include a temperature detection circuit, a voltage detection circuit, and a comparator. The temperature detection circuit is used to detect the temperature of the current working environment, the voltage detection circuit is used to detect the voltage of the current environment, and the comparator is used to detect the current environment. The temperature of the current working environment is compared with the previously measured ambient temperature. If the difference between the two is greater than the preset signal, the environment monitoring signal does not meet the preset signal, or the comparator is used to compare the voltage of the current working environment with the previous one. The ambient voltages measured once are compared, and if the difference between the two is greater than the preset signal, the environment monitoring signal does not meet the preset signal.
本申请实施例中,读写窗口校准电路100当前工作环境的温度、电压等因素发生变化时,也可能影响读窗口和写窗口的时序,或者影响读数据或写数据的传输,因此,在环境监测信号不满足预设信号时,可以将环境监测信号发送至校准验证电路10,利用校准验证电路10验证读数据是否能通过读窗口、写数据是否能通过写窗口,进而对读窗口或写窗口进行调节。In the embodiment of the present application, when the temperature, voltage and other factors of the current working environment of the read-write window calibration circuit 100 change, the timing of the read window and the write window may also be affected, or the transmission of read data or write data may be affected. Therefore, in the environment When the monitoring signal does not meet the preset signal, the environmental monitoring signal can be sent to the calibration verification circuit 10, and the calibration verification circuit 10 is used to verify whether the read data can pass the read window and whether the write data can pass the write window, and then the read window or write window can be verified. Make adjustments.
可选的,如图1所示,读写窗口校准电路还包括用户校准电路。用户校准电路,被配置为将用户校准信号发送至读写控制时序生成电路20。读写控制时序生成电路20,还被配置为接收用户校准信号,并根据用户校准信号调节读窗口和/或写窗口。Optionally, as shown in FIG. 1 , the read-write window calibration circuit further includes a user calibration circuit. The user calibration circuit is configured to send the user calibration signal to the read-write control timing generation circuit 20 . The read-write control timing generation circuit 20 is further configured to receive a user calibration signal, and adjust the read window and/or the write window according to the user calibration signal.
具体的,前述实施例描述了读写窗口校准电路100自动调节读窗口和写窗口的实施例,而在本申请实施例中,用户还可以手动调节读窗口和写窗口。用户可以触发用户校准电路,以向读写控制时序生成电路20发送用户校准信号User_adjust_en和User_adjust_wrrd,当用户校准信号User_adjust_en和User_adjust_wrrd为高电平时,读写控制时序生成电路20开始工作,并根据User_adjust_wrrd调节读窗口和/或写窗口。Specifically, the foregoing embodiment describes an embodiment in which the read and write window calibration circuit 100 automatically adjusts the read window and the write window, but in this embodiment of the present application, the user can also manually adjust the read window and the write window. The user can trigger the user calibration circuit to send the user calibration signals User_adjust_en and User_adjust_wrrd to the read/write control sequence generation circuit 20. When the user calibration signals User_adjust_en and User_adjust_wrrd are at a high level, the read/write control sequence generation circuit 20 starts to work and adjusts according to User_adjust_wrrd Read window and/or write window.
其中,用户校准信号User_adjust_wrrd包括增大读窗口、增大写窗口、减小读窗口、减小写窗口。The user calibration signal User_adjust_wrrd includes increasing the read window, increasing the write window, decreasing the read window, and decreasing the write window.
在一些实施例中,当用户通过用户校准电路向读写控制时序生成电路20发送用户校准信号的同时,校准验证电路10也控制读写控制时序生成电路20调节读窗口和/或写窗口,则读写控制时序生成电路20根据用户校准电路发送的用户校准信号调节读窗口和/或写窗口,或者,读写控制时序生成电路20根据校准验证电路10发送的Adjust_en信号、djust_rd信号、以及Adjust_wr信号调节读窗口和/或写窗口。In some embodiments, when the user sends a user calibration signal to the read/write control sequence generation circuit 20 through the user calibration circuit, the calibration verification circuit 10 also controls the read/write control sequence generation circuit 20 to adjust the read window and/or the write window, then The read-write control sequence generation circuit 20 adjusts the read window and/or the write window according to the user calibration signal sent by the user calibration circuit, or the read-write control sequence generation circuit 20 adjusts the read window and/or the write window according to the Adjust_en signal, the adjust_rd signal, and the Adjust_wr signal sent by the calibration verification circuit 10 Adjust the read window and/or write window.
本申请实施例中,用户还可以根据意愿,手动调节读窗口和/或写窗口。In this embodiment of the present application, the user can also manually adjust the read window and/or the write window according to his wishes.
可选的,如图1所示,读写窗口校准电路100还包括读写窗口配置调整电路50以及配置存储器60。Optionally, as shown in FIG. 1 , the read/write window calibration circuit 100 further includes a read/write window configuration adjustment circuit 50 and a configuration memory 60 .
读写窗口配置调整电路50,被配置为当读数据不能通过所述读窗口,和/或,写数据不能通过写窗口时,接收校准验证电路10发送的调整信号,并根据调整信号调用调整信息,将调整信息发送至配置存储器60。The read-write window configuration adjustment circuit 50 is configured to receive the adjustment signal sent by the calibration verification circuit 10 when the read data cannot pass the read window, and/or the write data cannot pass through the write window, and call the adjustment information according to the adjustment signal , the adjustment information is sent to the configuration memory 60 .
配置存储器60,被配置为接收调整信息,并调用与调整信息对应的配置信息,并将配置信息发送至读写控制时序生成电路20。The configuration memory 60 is configured to receive the adjustment information, call the configuration information corresponding to the adjustment information, and send the configuration information to the read-write control sequence generation circuit 20 .
读写控制时序生成电路20,还被配置为根据配置信息调节读窗口和/或写窗口。The read and write control timing generation circuit 20 is further configured to adjust the read window and/or the write window according to the configuration information.
具体的,当读数据不能通过所述读窗口,和/或,写数据不能通过写窗口时,校准验证电路10向读写窗口配置调整电路50发送调整信号Adjust_en,当调整信号Adjust_en为高电平时,读写窗口配置调整电路50工作并调用调整信息,之后将调整信息发送至配置存储器60;配置存储器60接收到调整信息后,调用与调整信息对应的配置信息,并将配置信息发送至读写控制时序生成电路20,读写控制时序生成电路20根据配置信息调解读窗口和/或写窗口的时序,以调节读窗口和/或写窗口。Specifically, when the read data cannot pass the read window, and/or the write data cannot pass the write window, the calibration verification circuit 10 sends an adjustment signal Adjust_en to the read and write window configuration adjustment circuit 50, when the adjustment signal Adjust_en is at a high level , the read-write window configuration adjustment circuit 50 works and calls the adjustment information, and then sends the adjustment information to the configuration memory 60; after the configuration memory 60 receives the adjustment information, it calls the configuration information corresponding to the adjustment information, and sends the configuration information to the read-write The control timing generation circuit 20 is controlled, and the read and write control timing generation circuit 20 adjusts the timing of the read window and/or the write window according to the configuration information, so as to adjust the read window and/or the write window.
在一些实施例中,调整信息可以是读窗口和写窗口的调节档位,例如,读窗口的初始调整信息对应的调节档位为RD_P0,读写窗口配置调整电路50接收到调整信号Adjust_en后,确定调整后的调整信息对应的调节档位为RD_P1。In some embodiments, the adjustment information may be the adjustment gears of the read window and the write window. For example, the adjustment gear corresponding to the initial adjustment information of the read window is RD_P0. After the read/write window configuration adjustment circuit 50 receives the adjustment signal Adjust_en, It is determined that the adjustment gear corresponding to the adjusted adjustment information is RD_P1.
配置信息可以是与调整信息对应的、用于调节读窗口和写窗口的时序的信息。The configuration information may be information corresponding to the adjustment information for adjusting the timing of the read window and the write window.
其中,调整信息可以预先存储在读写窗口配置调整电路50中,配置信息可以预先存储在配置存储器60中。The adjustment information may be stored in the read/write window configuration adjustment circuit 50 in advance, and the configuration information may be stored in the configuration memory 60 in advance.
本申请实施例中,在确定读数据不能通过所述读窗口,和/或,写数据不能通过写窗口时,可以从读写窗口配置调整电路50中调用调整信息,从配置存储器60中调用配置信息,进而利用读写控制时序生成电路20根据配置信息调解读窗口和/或写窗口的时序。In this embodiment of the present application, when it is determined that the read data cannot pass the read window, and/or the write data cannot pass the write window, the adjustment information may be called from the read/write window configuration adjustment circuit 50, and the configuration may be called from the configuration memory 60. information, and then use the read/write control timing generation circuit 20 to adjust the timing of the read window and/or the write window according to the configuration information.
如图7所示,本申请实施例还提供一种存储器1000,存储器1000包括多个存储单元200以及前述任一实施例所述的读写窗口校准电路100,读写窗口校准电路100用于校准存储单元200的读窗口以及写窗口。As shown in FIG. 7 , an embodiment of the present application further provides a memory 1000. The memory 1000 includes a plurality of storage units 200 and the read-write window calibration circuit 100 described in any of the foregoing embodiments. The read-write window calibration circuit 100 is used for calibration The read window and the write window of the storage unit 200 .
在一些实施例中,存储单元200可以与读写窗口校准电路100一一对应,一个读写窗口校准电路100用于校准一个储单元的读窗口以及写窗口。In some embodiments, the memory cells 200 may correspond to the read/write window calibration circuits 100 one-to-one, and one read/write window calibration circuit 100 is used to calibrate the read window and the write window of one memory cell.
在一些实施例中,如图1所示,存储单元200可以包括读控制电路、写控制电路、以及存储阵列。In some embodiments, as shown in FIG. 1 , the memory cell 200 may include a read control circuit, a write control circuit, and a memory array.
在读控制电路与存储阵列之间的字线为高电平时,读控制电路与存储阵列导通,读控制电路通过位线将读数据存储到存储阵列中;当写控制电路与存储阵列之间的字线为高电平时,写控制电路与存储阵列导通,写控制电路通过位线将写数据存储到存储阵列中。When the word line between the read control circuit and the storage array is at a high level, the read control circuit and the storage array are turned on, and the read control circuit stores the read data into the storage array through the bit line; When the word line is at a high level, the write control circuit conducts with the storage array, and the write control circuit stores the write data into the storage array through the bit line.
在存储阵列与校准验证电路10之间的字线为高电平时,存储阵列通过存储阵列与校准验证电路10之间的位线将存储的读数据和写数据发送至校准验证电路10,供校准验证电路10验证读数据是否可以通过读窗口、写数据是否可以通过写窗口。When the word line between the storage array and the calibration verification circuit 10 is at a high level, the storage array sends the stored read data and write data to the calibration verification circuit 10 through the bit line between the storage array and the calibration verification circuit 10 for calibration The verification circuit 10 verifies whether the read data can pass through the read window and whether the write data can pass through the write window.
在一些实施例中,存储器可以是静态随机存取存储器(Static Random-Access Memory, SRAM),SRAM的多个存储单元200为可编程块存储(Block RAM,简称BRAM)。In some embodiments, the memory may be a static random-access memory (Static Random-Access Memory, SRAM), and the plurality of storage units 200 of the SRAM are programmable block memory (Block RAM, BRAM for short).
本申请实施例提供一种存储器1000,关于其他解释说明以及有益效果,可以参考前述实施例,在此不再赘述。An embodiment of the present application provides a memory 1000. For other explanations and beneficial effects, reference may be made to the foregoing embodiments, which will not be repeated here.
如图8所示,本申请实施例还可提供一种FPGA芯片10000,包括前述任一实施例所述的存储器1000。As shown in FIG. 8 , an embodiment of the present application may further provide an FPGA chip 10000 including the memory 1000 described in any of the foregoing embodiments.
在此基础上,FPGA芯片10000还可以包括逻辑电路2000。逻辑电路200可以将数据存储在存储器1000中,还可以从存储器1000中调取数据。On this basis, the FPGA chip 10000 may further include a logic circuit 2000 . The logic circuit 200 can store data in the memory 1000 and can also retrieve data from the memory 1000 .
本申请实施例提供一种FPGA芯片10000,关于其他解释说明以及有益效果,可以参考前述实施例,在此不再赘述。Embodiments of the present application provide an FPGA chip 10000. For other explanations and beneficial effects, reference may be made to the foregoing embodiments, which will not be repeated here.
如图9所示,本申请实施例提供一种读写窗口校准方法,包括:As shown in FIG. 9 , an embodiment of the present application provides a method for calibrating a read-write window, including:
S110、校准验证电路10在当前时钟周期内,验证读数据是否能通过读窗口、写数据是否能通过写窗口。S110, the calibration verification circuit 10 verifies whether the read data can pass the read window and whether the write data can pass the write window in the current clock cycle.
S120、当读数据不能通过读窗口时,读写控制时序生成电路20增大读窗口。S120. When the read data cannot pass through the read window, the read-write control sequence generation circuit 20 increases the read window.
S130、当写数据不能通过写窗口时,读写控制时序生成电路20增大写窗口。S130. When the write data cannot pass through the write window, the read/write control sequence generation circuit 20 increases the write window.
S140、校准验证电路10获取读写窗口校准电路的工作频率,当工作频率小于预设频率时,控制读写控制时序生成电路20减小读窗口和/或写窗口,并在下一个时钟周期,重复验证读数据是否能通过读窗口、写数据是否能通过写窗口。S140, the calibration verification circuit 10 obtains the operating frequency of the read-write window calibration circuit, and when the operating frequency is less than the preset frequency, controls the read-write control sequence generation circuit 20 to reduce the read window and/or the write window, and repeats in the next clock cycle Verify that read data can pass the read window and write data can pass the write window.
在此基础上,在步骤S120的情况下,步骤S140可以包括当工作频率小于预设频率时,控制读写控制时序生成电路20减小写窗口。On this basis, in the case of step S120, step S140 may include controlling the read/write control sequence generation circuit 20 to reduce the write window when the operating frequency is less than the preset frequency.
在步骤S130的情况下,步骤S140可以包括当工作频率小于预设频率时,控制读写控制时序生成电路20减小读窗口。In the case of step S130, step S140 may include controlling the read/write control sequence generation circuit 20 to reduce the read window when the operating frequency is less than the preset frequency.
当所述工作频率大于或等于所述预设频率时,在步骤S120和步骤S130之后,读写窗口校准方法还可以包括:在下一时钟周期,重复验证读数据是否能通过读窗口、写数据是否能通过写窗口。When the operating frequency is greater than or equal to the preset frequency, after steps S120 and S130, the read-write window calibration method may further include: in the next clock cycle, repeatedly verifying whether the read data can pass the read window and whether the write data can pass Able to write through the window.
在当前时钟周期内,验证所述读数据不能通过所述读窗口时,在步骤S110之后、步骤S120和步骤S130之前,读写窗口校准方法还可以包括:确定在当前时钟周期之前的时钟周期,读写控制时序生成电路20是否减小读窗口;在当前时钟周期之前的时钟周期,若读写控制时序生成电路20未减小读窗口,则控制读写控制时序生成电路20增大读窗口;在当前时钟周期之前的时钟周期,若读写控制时序生成电路20已减小读窗口,则输出校准出错。In the current clock cycle, when it is verified that the read data cannot pass the read window, after step S110 and before step S120 and step S130, the read-write window calibration method may further include: determining a clock cycle before the current clock cycle, Whether the read-write control sequence generation circuit 20 reduces the read window; in the clock cycle before the current clock cycle, if the read-write control sequence generation circuit 20 does not reduce the read window, then the read-write control sequence generation circuit 20 is controlled to increase the read window; In the clock cycle before the current clock cycle, if the read-write control timing generation circuit 20 has reduced the read window, the output calibration is in error.
在当前时钟周期内,验证所述写数据不能通过所述写窗口时,在步骤S110之后、步骤S120和步骤S130之前,读写窗口校准方法还可以包括:确定在当前时钟周期之前的时钟周期,读写控制时序生成电路20是否减小写窗口;在当前时钟周期之前的时钟周期,若读写控制时序生成电路20未减小写窗口,则控制读写控制时序生成电路20增大写窗口;在当前时钟周期之前的时钟周期,若读写控制时序生成电路20已减小写窗口,则输出校准出错。In the current clock cycle, when verifying that the write data cannot pass the write window, after step S110 and before step S120 and step S130, the read-write window calibration method may further include: determining a clock cycle before the current clock cycle, Whether the read-write control sequence generation circuit 20 reduces the write window; in the clock cycle before the current clock cycle, if the read-write control sequence generation circuit 20 does not reduce the write window, then the read-write control sequence generation circuit 20 is controlled to increase the write window; In the clock cycle before the current clock cycle, if the read-write control sequence generation circuit 20 has reduced the write window, the output calibration is in error.
当所述工作频率小于预设频率时,在步骤S120和步骤S130之后、步骤S140之前,读写窗口校准方法还可以包括:确定在当前时钟周期之前的时钟周期,读写控制时序生成电路20是否增大读窗口和写窗口;在当前时钟周期之前的时钟周期,若读窗口和写窗口未均增大,则确定是否可以减小所述读窗口和/或写窗口;在可以减小所述读窗口和/或所述写窗口时,控制读写控制时序生成电路20减小读窗口和/或写;在当前时钟周期之前的时钟周期,若读写控制时序生成电路20已增大读窗口和所述写窗口,则输出校准出错。When the operating frequency is less than the preset frequency, after step S120 and step S130 and before step S140, the read-write window calibration method may further include: determining a clock cycle before the current clock cycle, whether the read-write control sequence generation circuit 20 is Increase the read window and the write window; in the clock cycle before the current clock cycle, if both the read window and the write window are not increased, determine whether the read window and/or the write window can be reduced; During the read window and/or the write window, control the read/write control sequence generation circuit 20 to reduce the read window and/or write; in the clock cycle before the current clock cycle, if the read/write control sequence generation circuit 20 has increased the read window and the write window, the output calibration error.
在步骤S110之后、步骤S120和步骤S130之前,当读数据能通过读窗口、且写数 据能通过写窗口,输出校准成功。After step S110 and before step S120 and step S130, when the read data can pass the read window and the write data can pass the write window, the output calibration is successful.
对于本申请实施例的其他解释说明以及有益效果,可以参考前述实施例,在此不再赘述。For other explanations and beneficial effects of the embodiments of the present application, reference may be made to the foregoing embodiments, which will not be repeated here.
最后应说明的是:以上实施例仅用以说明本申请的技术方案,而非对其限制;尽管参照前述实施例对本申请进行了详细的说明,本领域的普通技术人员当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不驱使相应技术方案的本质脱离本申请各实施例技术方案的精神和范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, but not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand: it can still be Modifications are made to the technical solutions described in the foregoing embodiments, or some technical features thereof are equivalently replaced; and these modifications or replacements do not drive the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims (14)

  1. 一种读写窗口校准电路,其特征在于,包括:A read-write window calibration circuit, comprising:
    校准验证电路,被配置为在当前时钟周期内,验证读数据是否能通过读窗口、写数据是否能通过写窗口;The calibration verification circuit is configured to verify whether the read data can pass the read window and whether the write data can pass the write window within the current clock cycle;
    读写控制时序生成电路,被配置为当所述读数据不能通过所述读窗口时,增大所述读窗口;a read-write control sequence generation circuit, configured to increase the read window when the read data cannot pass through the read window;
    所述读写控制时序生成电路,还被配置为当写数据不能通过所述写窗口时,增大所述写窗口;The read-write control sequence generation circuit is further configured to increase the write window when the write data cannot pass through the write window;
    所述校准验证电路,还被配置为获取所述读写窗口校准电路的工作频率,当所述工作频率小于预设频率时,控制所述读写控制时序生成电路减小所述读窗口和/或所述写窗口,并在下一个时钟周期,重复验证所述读数据是否能通过所述读窗口、所述写数据是否能通过所述写窗口。The calibration verification circuit is further configured to obtain the operating frequency of the read-write window calibration circuit, and when the operating frequency is less than a preset frequency, control the read-write control sequence generation circuit to reduce the read window and/or or the write window, and in the next clock cycle, it is repeatedly verified whether the read data can pass through the read window and whether the write data can pass through the write window.
  2. 根据权利要求1所述的读写窗口校准电路,其特征在于,在所述读写控制时序生成电路,被配置为在所述读数据不能通过所述读窗口时,增大所述读窗口的情况下,所述校准验证电路,还被配置为当所述工作频率小于预设频率时,控制所述读写控制时序生成电路减小写窗口。The read/write window calibration circuit according to claim 1, wherein the read/write control timing generation circuit is configured to increase the read/write window when the read data cannot pass through the read window. In this case, the calibration verification circuit is further configured to control the read-write control sequence generation circuit to reduce the write window when the operating frequency is less than a preset frequency.
  3. 根据权利要求1所述的读写窗口校准电路,其特征在于,在所述读写控制时序生成电路,被配置为在所述读数据不能通过所述写窗口时,增大所述写窗口的情况下,所述校准验证电路,还被配置为当所述工作频率小于预设频率时,控制所述读写控制时序生成电路减小读窗口。The read-write window calibration circuit according to claim 1, wherein the read-write control timing generation circuit is configured to increase the write window when the read data cannot pass the write window. In this case, the calibration verification circuit is further configured to control the read-write control sequence generation circuit to reduce the read window when the operating frequency is less than a preset frequency.
  4. 根据权利要求1所述的读写窗口校准电路,其特征在于,The read-write window calibration circuit according to claim 1, wherein,
    所述校准验证电路,还被配置为当所述工作频率大于或等于所述预设频率时,在下一时钟周期,重复验证读数据是否能通过读窗口、写数据是否能通过写窗口。The calibration verification circuit is further configured to repeatedly verify whether the read data can pass the read window and whether the write data can pass the write window in the next clock cycle when the operating frequency is greater than or equal to the preset frequency.
  5. 根据权利要求1所述的读写窗口校准电路,其特征在于,The read-write window calibration circuit according to claim 1, wherein,
    所述校准验证电路,还被配置为当在当前时钟周期内,验证所述读数据不能通过所述读窗口时,确定在当前时钟周期之前的时钟周期,所述读写控制时序生成电路是否减小所述读窗口;The calibration verification circuit is further configured to determine whether the read-write control sequence generation circuit decrements the clock cycle before the current clock cycle when it is verified that the read data cannot pass the read window within the current clock cycle. Small said reading window;
    所述校准验证电路,还被配置为在当前时钟周期之前的时钟周期,若所述读写控制时序生成电路未减小所述读窗口,则控制所述读写控制时序生成电路增大所述读窗口;The calibration verification circuit is further configured to control the read-write control sequence generation circuit to increase the read window in the clock cycle before the current clock cycle if the read-write control sequence generation circuit does not reduce the read window. read window;
    所述校准验证电路,还被配置为在当前时钟周期之前的时钟周期,若所述读写控制时序生成电路已减小所述读窗口,则输出校准出错。The calibration verification circuit is further configured to output a calibration error in a clock cycle before the current clock cycle if the read-write control sequence generation circuit has reduced the read window.
  6. 根据权利要求1所述的读写窗口校准电路,其特征在于,The read-write window calibration circuit according to claim 1, wherein,
    所述校准验证电路,还被配置为当在当前时钟周期内,验证所述写数据不能通过所述写窗口时,确定在当前时钟周期之前的时钟周期,所述读写控制时序生成电路是否减小所述写窗口;The calibration verification circuit is further configured to determine whether the read-write control sequence generation circuit decrements the clock cycle before the current clock cycle when verifying that the write data cannot pass the write window within the current clock cycle. Small said writing window;
    所述校准验证电路,还被配置为在当前时钟周期之前的时钟周期,若所述读写控制 时序生成电路未减小所述写窗口,则控制所述读写控制时序生成电路增大所述写窗口;The calibration verification circuit is further configured to control the read-write control sequence generation circuit to increase the write window in the clock cycle before the current clock cycle if the read-write control sequence generation circuit does not reduce the write window. write window;
    所述校准验证电路,还被配置为在当前时钟周期之前的时钟周期,若所述读写控制时序生成电路已减小所述写窗口,则输出校准出错。The calibration verification circuit is further configured to output a calibration error in a clock cycle before the current clock cycle if the read-write control sequence generation circuit has reduced the write window.
  7. 根据权利要求1所述的读写窗口校准电路,其特征在于,The read-write window calibration circuit according to claim 1, wherein,
    所述校准验证电路,还被配置为当所述工作频率小于预设频率时,确定在当前时钟周期之前的时钟周期,所述读写控制时序生成电路是否增大所述读窗口和所述写窗口;The calibration verification circuit is further configured to, when the operating frequency is less than a preset frequency, determine whether the read-write control sequence generation circuit increases the read window and the write-in clock cycle before the current clock cycle. window;
    所述校准验证电路,还被配置为在当前时钟周期之前的时钟周期,若所述读窗口和所述写窗口未均增大,则确定是否可以减小所述读窗口和/或所述写窗口;The calibration verification circuit is further configured to determine whether the read window and/or the write window can be reduced if both the read window and the write window are not increased in a clock cycle before the current clock cycle window;
    所述校准验证电路,还被配置为在可以减小所述读窗口和/或所述写窗口时,控制所述读写控制时序生成电路减小所述读窗口和/或写;The calibration verification circuit is further configured to control the read-write control sequence generation circuit to reduce the read window and/or write when the read window and/or the write window can be reduced;
    所述校准验证电路,还被配置为在当前时钟周期之前的时钟周期,若所述读写控制时序生成电路已增大所述读窗口和所述写窗口,则输出校准出错。The calibration verification circuit is further configured to output a calibration error in a clock cycle before the current clock cycle if the read and write control sequence generation circuit has increased the read window and the write window.
  8. 根据权利要求1所述的读写窗口校准电路,其特征在于,The read-write window calibration circuit according to claim 1, wherein,
    所述校准验证电路,还被配置为当所述读数据能通过所述读窗口、且所述写数据能通过所述写窗口,输出校准成功。The calibration verification circuit is further configured to output a successful calibration when the read data can pass through the read window and the write data can pass through the write window.
  9. 根据权利要求1-8任一项所述的读写窗口校准电路,其特征在于,所述读写窗口校准电路还包括环境监测电路;The read-write window calibration circuit according to any one of claims 1-8, wherein the read-write window calibration circuit further comprises an environmental monitoring circuit;
    所述环境监测电路,被配置为获取环境监测信号,并在环境监测信号不满足预设信号时,将环境监测信号发送至所述校准验证电路;The environmental monitoring circuit is configured to acquire the environmental monitoring signal, and send the environmental monitoring signal to the calibration verification circuit when the environmental monitoring signal does not meet the preset signal;
    所述校准验证电路,还被配置为接收所述环境监测信号,并在新的时钟周期验证读数据是否能通过读窗口、写数据是否能通过写窗口。The calibration verification circuit is further configured to receive the environment monitoring signal, and to verify whether the read data can pass the read window and whether the write data can pass the write window in a new clock cycle.
  10. 根据权利要求1-8任一项所述的读写窗口校准电路,其特征在于,所述读写窗口校准电路还包括用户校准电路;The read-write window calibration circuit according to any one of claims 1-8, wherein the read-write window calibration circuit further comprises a user calibration circuit;
    所述用户校准电路,被配置为将用户校准信号发送至所述读写控制时序生成电路;the user calibration circuit, configured to send a user calibration signal to the read-write control sequence generation circuit;
    所述读写控制时序生成电路,还被配置为接收所述用户校准信号,并根据所述用户校准信号调节所述读窗口和/或所述写窗口。The read-write control timing generation circuit is further configured to receive the user calibration signal and adjust the read window and/or the write window according to the user calibration signal.
  11. 根据权利要求1-8任一项所述的读写窗口校准电路,其特征在于,所述读写窗口校准电路还包括读写窗口配置调整电路以及配置存储器;The read-write window calibration circuit according to any one of claims 1-8, wherein the read-write window calibration circuit further comprises a read-write window configuration adjustment circuit and a configuration memory;
    所述读写窗口配置调整电路,被配置为当所述读数据不能通过所述读窗口,和/或,所述写数据不能通过所述写窗口时,接收所述校准验证电路发送的调整信号,并根据所述调整信号调用调整信息,将所述调整信息发送至所述配置存储器;The read-write window configuration adjustment circuit is configured to receive an adjustment signal sent by the calibration verification circuit when the read data cannot pass through the read window, and/or when the write data cannot pass through the write window , and call adjustment information according to the adjustment signal, and send the adjustment information to the configuration memory;
    所述配置存储器,被配置为接收所述调整信息,并调用与所述调整信息对应的配置信息,并将所述配置信息发送至所述读写控制时序生成电路;The configuration memory is configured to receive the adjustment information, call the configuration information corresponding to the adjustment information, and send the configuration information to the read-write control sequence generation circuit;
    所述读写控制时序生成电路,还被配置为根据所述配置信息调节所述读窗口和/或所述写窗口。The read-write control timing generation circuit is further configured to adjust the read window and/or the write window according to the configuration information.
  12. 一种存储器,其特征在于,包括多个存储单元以及权利要求1-11所述的读写窗口校准电路,所述读写窗口校准电路用于校准所述存储单元的读窗口以及写窗口。A memory is characterized by comprising a plurality of storage units and the read-write window calibration circuit according to claims 1-11, wherein the read-write window calibration circuit is used for calibrating a read window and a write window of the storage unit.
  13. 一种FPGA芯片,其特征在于,包括权利要求12所述的存储器。An FPGA chip, characterized by comprising the memory of claim 12 .
  14. 一种读写窗口校准方法,其特征在于,包括:A read-write window calibration method, comprising:
    校准验证电路在当前时钟周期内,验证读数据是否能通过读窗口、写数据是否能通过写窗口;The calibration verification circuit verifies whether the read data can pass the read window and whether the write data can pass the write window within the current clock cycle;
    当所述读数据不能通过所述读窗口时,读写控制时序生成电路增大所述读窗口;When the read data cannot pass the read window, the read-write control sequence generation circuit increases the read window;
    当写数据不能通过所述写窗口时,所述读写控制时序生成电路增大所述写窗口;When the write data cannot pass the write window, the read-write control sequence generation circuit increases the write window;
    所述校准验证电路获取所述读写窗口校准电路的工作频率,当所述工作频率小于预设频率时,控制所述读写控制时序生成电路减小所述读窗口和/或所述写窗口,并在下一个时钟周期,重复验证所述读数据是否能通过所述读窗口、所述写数据是否能通过所述写窗口。The calibration verification circuit obtains the operating frequency of the read-write window calibration circuit, and when the operating frequency is less than a preset frequency, controls the read-write control sequence generation circuit to reduce the read window and/or the write window , and in the next clock cycle, it is repeatedly verified whether the read data can pass through the read window and whether the write data can pass through the write window.
PCT/CN2021/079686 2020-12-31 2021-03-09 Read/write window calibration circuit and method, memory, and fpga chip WO2022141798A1 (en)

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