WO2022135366A1 - 磁控溅射设备 - Google Patents

磁控溅射设备 Download PDF

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Publication number
WO2022135366A1
WO2022135366A1 PCT/CN2021/139913 CN2021139913W WO2022135366A1 WO 2022135366 A1 WO2022135366 A1 WO 2022135366A1 CN 2021139913 W CN2021139913 W CN 2021139913W WO 2022135366 A1 WO2022135366 A1 WO 2022135366A1
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Prior art keywords
introduction
bias
power supply
insulating
process chamber
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PCT/CN2021/139913
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English (en)
French (fr)
Inventor
武树波
马迎功
师帅涛
许文学
郭冰亮
甄梓杨
张璐
崔亚欣
翟洪涛
Original Assignee
北京北方华创微电子装备有限公司
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Application filed by 北京北方华创微电子装备有限公司 filed Critical 北京北方华创微电子装备有限公司
Priority to US18/258,499 priority Critical patent/US20240068087A1/en
Priority to KR1020237021757A priority patent/KR102620632B1/ko
Priority to EP21909362.2A priority patent/EP4269649A4/en
Publication of WO2022135366A1 publication Critical patent/WO2022135366A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Definitions

  • the present invention relates to the technical field of semiconductor equipment, in particular, to a magnetron sputtering equipment.
  • the wafer In the semiconductor aluminum nitride (AlN) film deposition process, before the wafer (Wafer) is subjected to the aluminum nitride film deposition process, the wafer needs to be pre-cleaned to remove contaminants and impurities on the wafer. , to improve the adhesion between the wafer and the aluminum nitride film, and to improve the results of the deposition process of the aluminum nitride film, thereby improving the performance of the chip.
  • AlN semiconductor aluminum nitride
  • the pre-cleaning process is usually performed in a pre-cleaning chamber.
  • the wafer needs to be heated through the pre-cleaning chamber, and argon (Ar) or nitrogen (N 2 ) is introduced into the pre-cleaning chamber, and the pre-cleaning chamber is activated.
  • Argon or nitrogen in the chamber forms a plasma to bombard the wafer with the plasma to achieve pre-cleaning of the wafer.
  • the aluminum nitride film deposition process is usually carried out in a deposition chamber.
  • the wafer needs to be heated through the deposition chamber, and argon and nitrogen gas are introduced into the deposition chamber, and the argon and nitrogen gas in the deposition chamber are excited to form plasma.
  • the aluminum target is bombarded with argon ions to generate aluminum atoms, and aluminum nitride is formed by combining aluminum atoms with nitrogen atoms in nitrogen to deposit on the wafer, so as to realize the deposition of aluminum nitride film on the wafer.
  • the existing pre-cleaning process and AlN thin film deposition process are carried out in two different chambers, which results in high production and maintenance costs, and the wafer needs to be transferred between the two different chambers , resulting in a long process time and low equipment capacity.
  • the present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a magnetron sputtering equipment, which can reduce production and maintenance costs, and avoid wafer transfer between different process chambers, thereby Reduce process time and increase throughput.
  • a magnetron sputtering equipment which includes a process chamber, a bias power supply assembly and an excitation power supply assembly.
  • the process chamber is provided with a base assembly and a bias voltage introduction assembly.
  • the process The top of the chamber is provided with a target, wherein,
  • the base assembly is located at the bottom of the process chamber and is used for supporting the wafer carrier, driving the wafer carrier to move, and heating the wafer carrier;
  • the bias voltage introduction assembly is located on the base assembly for supporting the wafer carrier, and the bias voltage introduction assembly is in electrical contact with the wafer carrier;
  • the bias power supply component is electrically connected to the bias introduction component, and is used for applying a bias voltage to the wafer carrier through the bias introduction component;
  • the excitation power supply assembly is electrically connected to the target, and is used for applying excitation voltage to the target.
  • the bias voltage introduction component includes an insulating connector, a conductive member and a contact member, wherein the conductive member penetrates through the insulating connector, and two ends of the conductive member are respectively connected to the bias voltage a power supply assembly is electrically connected to the contact piece, and is used for guiding the bias voltage provided by the bias power supply assembly to the contact piece;
  • the insulating connector is arranged on the base assembly, and is used to electrically insulate the conductive member from the base assembly;
  • the contacts are in electrical contact with the wafer carrier for supporting the wafer carrier and introducing the bias voltage into the wafer carrier.
  • the contact piece is annular, and at least one opening is formed on the contact piece, and the opening is used for a transport piece for transporting the wafer to pass through.
  • the insulating connector includes a first insulator and a second insulator
  • the conductive member includes a first conductor and a second conductor, wherein the first insulator is horizontally disposed on the base assembly, and is connected to the base assembly.
  • the base assembly is insulated, and the second insulator is vertically arranged on the first insulator;
  • the first conductor is penetrated in the first insulator and protrudes from the first insulator to be electrically connected to the bias power supply assembly, and the second conductor is penetrated in the second insulator , and extend from the second insulator to be electrically connected to the first conductor and the contact piece respectively.
  • the first insulator includes a first insulating part and a second insulating part that are arranged in a cross, and the second insulator is vertically arranged on the second insulating part;
  • the first conductor includes a first conductive portion and a second conductive portion that are arranged in an intersecting manner and are electrically connected, wherein the first conductive portion passes through the first insulating portion and is separated from the first insulating portion.
  • the part protrudes out and is electrically connected to the bias power supply assembly; the second conductive part penetrates the second insulating part and is electrically connected to the second conductor.
  • the first insulator includes a first insulating connecting portion and a second insulating connecting portion, the first insulating connecting portion and the second insulating connecting portion are detachably connected, and the first insulating connecting portion is provided with a first accommodating groove, the second insulating connecting part is provided with a second accommodating groove corresponding to the first accommodating groove, the first accommodating groove and the second accommodating groove cooperate to form a accommodating space, the first accommodating groove
  • the electrical conductor is arranged in the accommodating space.
  • the second insulators there are a plurality of the second insulators, and the plurality of the second insulators are arranged on the first insulator at intervals; the number of the second conductors is the same as the number of the second insulators, and a plurality of The second conductors are passed through the plurality of second insulators in a one-to-one correspondence, and are electrically connected to different positions of the contact pieces.
  • the bias power supply assembly includes a bias power supply, a matcher and a radio frequency introduction, wherein the bias power supply is used to provide the bias voltage, the matcher is used to achieve impedance matching, and the radio frequency introduction
  • the sealing is arranged on the chamber wall of the process chamber, one end of the radio frequency introduction part is electrically connected with the bias voltage introduction component, and the other end of the radio frequency introduction part is connected to the bias voltage power supply through the matching device an electrical connection for introducing the bias voltage provided by the bias power supply into the bias voltage introduction component.
  • the radio frequency introduction member includes a radio frequency introduction structure and a radio frequency shielding structure, wherein the radio frequency shielding structure is sealed on the chamber wall of the process chamber, and a first insulating member is provided inside the radio frequency shielding structure.
  • the introduction structure is penetrated in the first insulating member and is sealedly connected with the radio frequency shielding structure.
  • One end of the radio frequency introduction structure is located in the process chamber and is electrically connected with the bias introduction component.
  • the other end of the introduction structure is located outside the process chamber and is electrically connected to the bias power supply.
  • the end of the radio frequency introduction structure located in the process chamber is sleeved with a second insulating member, and the radio frequency introduction structure is used for For introducing the bias voltage provided by the bias power supply into the bias voltage introduction component, the radio frequency shielding structure is used for shielding the bias voltage introduced by the radio frequency introduction structure.
  • the radio frequency introduction structure includes a first introduction part and a second introduction part
  • the first introduction part is sealedly connected to an end of the radio frequency shielding structure located outside the process chamber
  • the first introduction part is One end is connected to the bias power supply
  • the other end of the first introduction part extends into the first insulating member
  • the second introduction part is sealed with the end of the radio frequency shielding structure located in the process chamber
  • One end of the second introduction part is connected with the bias voltage introduction component
  • the other end of the second introduction part extends into the first insulating member, and is connected with the first introduction part
  • the first Two insulating parts are sleeved on one end of the second lead-in portion connected to the bias lead-in component.
  • the wafer carrier in the semiconductor pre-cleaning process, can be supported by the base assembly, and the wafer carrier can be driven to move to the pre-cleaning process position in the process chamber, and the wafer carrier can be heated
  • a bias voltage can be applied to the wafer carrier with the help of the bias voltage introduction component, so that the pre-cleaning process gas introduced into the process chamber can form plasma to the wafer carried on the wafer carrier. bombardment, so that the wafer can be subjected to a semiconductor pre-cleaning process.
  • the wafer carrier can be supported by the base assembly, and the wafer carrier can be driven to move in the process chamber to the film deposition process position, and
  • the wafer carrier is heated to the temperature of the thin film deposition process, and the excitation voltage can be applied to the target with the help of the excitation power supply assembly, so that the thin film deposition process gas introduced into the process chamber forms plasma and bombards the target material to generate target atoms and atoms.
  • the thin film deposition process gas is combined to form the to-be-deposited material, so that the semiconductor thin film deposition process can be performed on the wafer.
  • the magnetron sputtering equipment provided by the present invention, by combining the process chamber, the bias power supply assembly, the excitation power supply assembly, the base
  • the components, bias introduction components and targets are integrated together, and both the semiconductor pre-cleaning process and the semiconductor thin film deposition process can be performed in the same process chamber, which can reduce production and maintenance costs, and avoid wafers in different processes. Transfer between process chambers, reducing process time and increasing throughput.
  • FIG. 1 is a schematic structural diagram of a magnetron sputtering device provided by an embodiment of the present invention
  • FIG. 2 is a schematic three-dimensional structural diagram of a bias introduction component of a magnetron sputtering apparatus provided by an embodiment of the present invention
  • FIG. 3 is a schematic side view structure diagram of a bias voltage introduction assembly of a magnetron sputtering apparatus provided in an embodiment of the present invention
  • FIG. 4 is a schematic structural diagram of a bias power supply assembly of a magnetron sputtering apparatus provided by an embodiment of the present invention
  • this embodiment provides a magnetron sputtering equipment, including a process chamber 1 , a bias power supply assembly 3 and an excitation power supply assembly 5 , and the process chamber 1 is provided with a base assembly 6 and a bias voltage introduction Component 2, the top of the process chamber 1 is provided with a target 4, wherein the base assembly 6 is located at the bottom of the process chamber 1 for supporting the wafer carrier 7, driving the wafer carrier 7 to move, and heating the wafer The carrier 7; the bias introduction component 2 is located on the base component 6 for supporting the wafer carrier 7, and the bias introduction component 2 is in electrical contact with the wafer carrier 7; the bias power supply component 3 and the bias introduction component 2 is electrically connected, for loading a bias voltage to the wafer carrier 7 through the bias voltage introduction component 2;
  • the wafer carrier 7 in the semiconductor pre-cleaning process, can be supported by the base assembly 6, and the wafer carrier 7 can be driven to move to the pre-cleaning position in the process chamber 1, and
  • the wafer carrier 7 is heated to the temperature of the pre-cleaning process, and a bias voltage can be applied to the wafer carrier 7 with the help of the bias voltage introduction component 2, so that the pre-cleaning process gas introduced into the process chamber 1 forms a plasma which is borne on the wafer carrier 7.
  • the wafer on the wafer carrier 7 is bombarded, so that the wafer can be subjected to a semiconductor pre-cleaning process.
  • the wafer carrier 7 can be supported by the base assembly 6 and drive the wafer carrier 7. Move to the film deposition process position in the process chamber 1, and heat the wafer carrier 7 to the film deposition process temperature, and the excitation voltage can be applied to the target 4 by the excitation power supply assembly 5, so that the film passed into the process chamber 1
  • the deposition process gas forms plasma to bombard the target 4, and the atoms of the target material are combined with the thin film deposition process gas to form the to-be-deposited material, so that the semiconductor thin film deposition process can be performed on the wafer.
  • the magnetron sputtering provided in this embodiment Equipment by integrating process chamber 1, bias power supply assembly 3, excitation power supply assembly 5, base assembly 6, bias introduction assembly 2 and target 4, semiconductor pre-cleaning can be performed in the same process chamber 1 process, and semiconductor thin film deposition process, which can reduce production and maintenance costs, and avoid wafer transfer between different process chambers, thereby shortening process time and increasing throughput.
  • the magnetron sputtering equipment provided in this embodiment is used for the deposition process of aluminum nitride film as an example for illustration.
  • a semiconductor pre-cleaning process needs to be performed first.
  • a pre-cleaning process gas is introduced into the process chamber 1, and a manipulator (not shown in the figure) carries a wafer carrier 7 carrying a wafer (eg, a chip) into the process chamber 1, and removes the wafer.
  • the carrier 7 and the wafer are placed on the bias introduction assembly 2 and the base assembly 6 , the base assembly 6 and the bias introduction assembly 2 jointly support the wafer carrier 7 , and the bias introduction assembly 2 is arranged on the base assembly 6 , the base assembly 6 drives the bias voltage introduction assembly 2 and the wafer carrier 7 to move, moves the wafer carrier 7 to the pre-cleaning process position, and the base assembly 6 heats the wafer carrier 7 to the pre-cleaning process temperature, so that the load
  • the temperature of the wafer on the wafer carrier 7 reaches the temperature required for the pre-cleaning process, and the bias voltage provided by the bias power supply assembly 3 passes through the bias voltage that is electrically connected to the bias power supply assembly 3 and is in electrical contact with the wafer carrier 7 .
  • the pressure introduction assembly 2 is loaded on the wafer carrier 7, and the pre-cleaning process gas introduced into the process chamber 1 is excited to form plasma, so as to bombard the wafer with the plasma formed by the pre-cleaning process gas, thereby realizing the semiconductor Pre-cleaning process.
  • the aluminum nitride film deposition process is performed.
  • argon and nitrogen gas can be introduced into the process chamber 1 as the film deposition process gas, and the target material 4 can include aluminum
  • the target, the wafer carrier 7 carrying the wafer is still on the base assembly 6 and the bias introduction assembly 2, the base assembly 6 drives the support bias introduction assembly 2 and the wafer carrier 7 to move, and the wafer is carried
  • the member 7 is moved to the film deposition process position, and the base assembly 6 continues to heat the wafer carrier 7 until it reaches the film deposition process temperature, so that the temperature of the wafer carried on the wafer carrier 7 reaches the temperature required by the film deposition process.
  • the excitation power supply assembly 5 loads the excitation voltage to the aluminum target, so that the argon and nitrogen gas introduced into the process chamber 1 form plasma, and the aluminum target located at the top of the process chamber 1 is bombarded with argon ions to generate aluminum atoms , the aluminum atoms fall in the process chamber 1, and in the process, combine with nitrogen atoms to form aluminum nitride and deposit on the wafer, so as to realize the aluminum nitride film deposition process.
  • the wafer carrier 7 can be continuously heated, so that the temperature of the wafer carrier 7 reaches the film deposition temperature. process temperature, so that the change range of the heating power output by the base assembly 6 can be gentle, and there will be no frequent switching between low power and high power, so that the service life of the base assembly 6 can be prolonged, which can reduce Production and maintenance costs.
  • the pre-cleaning process gas may include argon or nitrogen, and the wafer carrier 7 may include a tray.
  • the process chamber 1 may be provided with an exhaust port 12 of the air inlet 11 , wherein the air inlet 11 may be provided on the side of the process chamber 1 ,
  • an exhaust port 12 may be provided at the bottom of the process chamber 1 for supplying gas out of the process chamber 1 .
  • the pre-cleaning process gas and the thin-film deposition process gas can enter the process chamber 1 through the gas inlet 11 , and the pre-cleaning process gas and the thin-film deposition process gas entering the process chamber 1 can be discharged from the process chamber 1 through the exhaust port 12 . discharge.
  • the excitation power supply assembly 5 may include a DC power supply, and the DC power supply is used to apply a DC voltage to the target material.
  • the bias voltage introduction component 2 may include an insulating connecting piece, a conducting piece 24 and a contact piece 21 , wherein the conducting piece 24 passes through the insulating connecting piece, And the two ends of the conductive member 24 are respectively electrically connected to the bias power supply assembly 3 and the contact member 21 for guiding the bias voltage provided by the bias power supply assembly 3 to the contact member 21;
  • the insulating connecting member is arranged on the base assembly 6 , used to electrically insulate the conductive member 24 from the base assembly 6 ;
  • the contact member 21 is in electrical contact with the wafer carrier 7 to support the wafer carrier 7 and introduce bias voltages into the wafer carrier 7 .
  • the contact piece 21 is in contact with the wafer carrier 7, and is electrically connected to the wafer carrier 7, and the conductive piece 24 passes through the insulating connection piece, And both ends of the conductive member 24 are electrically connected to the bias power supply assembly 3 and the contact member 21 respectively, and are used to guide the bias voltage provided by the bias power supply assembly 3 to the contact member 21, that is, the bias provided by the bias power supply assembly 3.
  • the voltage is first applied to the conductive member 24 , then conducted to the contact member 21 through the conductive member 24 , and then conducted to the wafer carrier 7 through the contact member 21 .
  • the insulating connector is arranged on the base assembly 6 to electrically insulate the conductive member 24 from the base assembly 6 to prevent the bias voltage conducted by the conductive member 24 from being conducted to the process chamber 1 through the base assembly 6, so that the The bias voltage conducted by the conductive member 24 can be smoothly conducted to the contact member 21 .
  • the contact piece 21 may be annular, and at least one opening is formed on the contact piece 21 , and the opening is used for the transmission piece for transferring the wafer to pass through. That is to say, the contact piece 21 may be composed of a plurality of arc-shaped sub-contact pieces distributed at intervals along the circumferential direction to form an annular contact piece as a whole, and the interval between two adjacent sub-contact pieces is the above-mentioned opening.
  • the wafer carrier 7 carrying the wafer can be transferred to the process chamber 1 by a transfer member such as a robot, and the opening on the contact member 21 is used for transfer by the robot or the like.
  • the workpiece passes through, so that the transfer member can move to the position below the wafer carrier 7, so as to avoid interference between the contact member 21 and the transfer member such as the manipulator, so that the transfer member such as the manipulator cannot transfer the wafer to the wafer carrier 7.
  • the ring-shaped contact member 21 is placed on the contact member 21 , so that the transfer member such as a manipulator can smoothly place the wafer and the wafer carrier 7 on the contact member 21 .
  • the above-mentioned insulating connector may include a first insulator 22 and a second insulator 23
  • the conductive member 24 may include a first conductor 241 and a second conductor 242
  • the first insulator 22 is horizontally arranged on the base assembly 6
  • the second insulator 23 is vertically arranged on the first insulator 22
  • the extension is electrically connected to the bias power supply assembly 3
  • the second conductor 242 penetrates through the second insulator 23 and extends from the second insulator 23 to be electrically connected to the first conductor 241 and the contact piece 21 respectively.
  • the first conductor 241 is electrically connected to the bias power supply assembly 3
  • the second conductor 242 is electrically connected to the first conductor 241 and the contact piece 21 respectively, and the bias voltage provided by the bias power supply assembly 3 is first applied to the first conductor 241 , and then conducted to the second conductor 242 through the first conductor 241 , and then conducted to the contact 21 through the second conductor 242 .
  • the above-mentioned first insulator 22 and second insulator 23 can electrically insulate the first conductor 241 and the second conductor 242 from the base assembly 6, and avoid the bias of conduction between the first conductor 241 and the second conductor 242.
  • the set voltage is conducted to the process chamber 1 through the base assembly 6, and the support and fixation of the first conductor 241, the second conductor 242 and the contact piece 21 can be realized, so as to ensure that these components can be stably fixed on the base on component 6.
  • both ends of the second electrical conductor 242 may be provided with external threads, and one of the two ends of the second electrical conductor 242 may be provided with a convex portion 2421 .
  • a conductor 241 may be provided with a hole with an internal thread, and the contact piece 21 may be provided with a through hole.
  • the lower surfaces of the second conductors 21 are abutted against each other, and the second conductor 242 and the contact piece 21 can be threadedly connected and electrically connected at the same time by screwing the nut with the external thread of the other end of the second conductor 242 .
  • the above-mentioned convex portion 2421 is used to support the contact piece 21 .
  • the first insulator 22 includes a first insulator portion 221 and a second insulator portion 222 arranged in a cross, and the second insulator 23 is vertically disposed on the second insulator portion 222;
  • the first conductive body 241 includes a first conductive part and a second conductive part (not shown in the figure) that are arranged crosswise and are electrically connected, wherein the first conductive part passes through the first conductive part along the extending direction of the first insulating part 221
  • the insulating portion 221 extends from the first insulating portion 221 and is electrically connected to the bias power supply assembly 3;
  • the conductors 242 are electrically connected.
  • the intersecting shapes of the first insulating portion 221 and the second insulating portion 222 match the intersecting shapes of the first conductive portions and the second conducting portions respectively passing through them. With this arrangement, the support stability of the bias voltage introduction assembly 2 can be further improved.
  • the first insulating portion 221 and the second insulating portion 222 are vertically intersected, that is, the first insulating portion 221 and the second insulating portion 222 are perpendicular to each other.
  • a conductive portion and a second conductive portion may be vertically intersected, but the included angle between the first insulating portion 221 and the second insulating portion 222 and the included angle between the first conducting portion and the second conducting portion are not the same limited.
  • first insulating portion 221 there is one first insulating portion 221 , two second insulating portions 222 , and the two second insulating portions 222 are parallel and spaced apart, and both are parallel to the first insulating portion 222 .
  • the insulating portions 221 are arranged crosswise, correspondingly, there are one first conducting portion and two second conducting portions, and the two second conducting portions are respectively pierced through the two second insulating portions along the extending direction of the second insulating portion 222 .
  • the first conductive portion is penetrated in the first insulating portion 221 along the extending direction of the first insulating portion 221, so as to further improve the support stability of the bias voltage introduction component 2, but the number of the second insulating portion 222 is the same. Not limited to this, there may also be one, three or more.
  • the number of the second conductive parts is the same as the number of the second insulating parts 222 , and they are provided in a one-to-one correspondence.
  • the first insulating body 22 may include a first insulating connecting portion 223 and a second insulating connecting portion 224 , and the first insulating connecting portion 223 and the second insulating connecting portion 224 are detachable
  • the first insulating connection part 223 is provided with a first accommodating groove
  • the second insulating connecting part 224 is provided with a second accommodating groove corresponding to the first accommodating groove
  • the first accommodating groove and the second accommodating groove cooperate to form an accommodating space
  • the first conductor 241 is provided in the accommodating space.
  • the first insulating connecting part 223 is divided into two parts, and the second insulating connecting part 224 is divided into two parts, wherein the first part of the first insulating connecting part 223 corresponds to the second insulating connecting part 223 .
  • the first part of the connecting part 224 is detachably connected to form the first insulating part 221 ; the second part of the first insulating connecting part 223 is correspondingly detachably connected to the second part of the second insulating connecting part 224 to form the second insulating part Section 222.
  • first part of the first insulating connection part 223 and the first part of the second insulating connection part 224 constitute the first part of the accommodating space
  • second part of the first insulating connection part 223 and the second part of the second insulating connection part 224 The interior of the two parts constitutes the first part of the above-mentioned accommodating space, and the first part and the second part of the accommodating space are communicated through the through holes correspondingly provided on the first insulating connecting part 223 and the second insulating connecting part 224 .
  • the first conductor 241 can be placed in the first receiving groove of the first insulating connecting part 223 (including the first part and the second part), and then the second insulating connecting part 224 (including the first part and the second part) is buckled on the first insulating connecting part 223, at this time, the second accommodating groove of the second insulating connecting part 224 and the first accommodating groove of the first insulating connecting part 223 are formed correspondingly In the accommodating space, the first conductor 241 is disposed in the accommodating space.
  • the way in which the first insulating connecting portion 223 and the second insulating connecting portion 224 are detachably connected specifically includes: the first insulating connecting portion 223 and the second insulating connecting portion 224 are snapped together, and then threaded through a threaded connecting piece such as a bolt. Through the through holes on the second insulating connecting part 224 and the first insulating connecting part 223, and screwing with the base assembly 6 to fix the first insulating connecting part 223 and the second insulating connecting part 224 on the base assembly 6 .
  • the second conductor 242 can be inserted into the second insulating part 222 and electrically connected with the first conductor 241, and then the second insulator 23 can be sheathed on the second conductor 242 , and finally the second conductor 242 is electrically connected to the contact piece 21 , thereby completing the installation of the bias voltage introduction assembly 2 .
  • the insulating connector may include a plurality of second insulators 23 , and the plurality of second insulators 23 are disposed on the first insulator 22 at intervals.
  • the conductive member 24 may A plurality of second conductors 242 are included, and the plurality of second conductors 242 are disposed in the plurality of second insulators 23 in one-to-one correspondence, and each second conductor 242 is electrically connected to the contact piece 21 .
  • the insulating connector may include four second insulators 23 , wherein two second insulators 23 are disposed on one of the second insulating parts 222 at intervals, and the other two The two insulators 23 are disposed on the other second insulating portion 222 at intervals.
  • one ends of the two second insulators 23 on the same second insulating portion 222 are respectively connected at positions close to both ends of the second insulating portion 222 , so that the second insulating portion 222 can be uniformly stressed.
  • the conductor 24 may include four second conductors 242 , which are provided in the four second insulators 23 in a one-to-one correspondence, wherein the two second conductors 242 are electrically connected to one of the sub-contacts of the contact 21 . connection, the other two second conductors 242 are electrically connected to another sub-contact, preferably, the two second conductors 242 that are electrically connected to the same sub-contact are respectively connected at positions close to both ends of the sub-contact , so that the sub-contact can be stably supported.
  • the respective numbers of the insulating connecting members and the second conductive members 24 are not limited thereto, and may also be two, three or more.
  • the bias power supply assembly 3 may include a bias power supply 31 , a matcher 33 and a radio frequency introduction part 32 , wherein the bias power supply 31 is used to provide a bias voltage, and the matching
  • the device 33 is used to achieve impedance matching, the RF lead-in 32 is sealed and arranged on the chamber wall of the process chamber 1, one end of the RF lead-in 32 is electrically connected to the bias voltage lead-in component 2, and the other end of the RF lead-in 32 passes through a matcher 33 is electrically connected to the bias power supply 31 for introducing the bias voltage provided by the bias power supply 31 into the bias introduction component 2 .
  • the bias power supply 31 and the matcher 33 are located outside the process chamber 1 , the bias voltage introduction component 2 is located in the process chamber 1 , and the radio frequency introduction member 32 is sealed on the chamber wall of the process chamber 1 , In order to ensure the sealing environment required by the process chamber 1, one end of the RF lead-in member 32 is electrically connected to the bias voltage lead-in component 2, and the other end is electrically connected to the bias voltage power supply 31 through the matching device 33, so as to connect the RF lead-in member 32 outside the process chamber 1.
  • the bias voltage provided by the bias power supply 31 is introduced into the bias voltage introduction component 2 located in the process chamber 1, that is, the bias voltage provided by the bias voltage power supply 31 is first loaded onto the RF lead-in 32 through the matcher 33, and then passed through the RF Lead-in 32 leads into bias lead-in assembly 2 .
  • the reflected power can be reduced as much as possible, so that enough bias voltage can be introduced into the bias voltage introduction component 2, so as to avoid the waste of the bias voltage, thereby improving the utilization rate of the bias voltage and shortening the process. time and increase productivity.
  • the bias power supply 31 may include a radio frequency power supply.
  • the radio frequency power supply is used to apply radio frequency voltage to the bias voltage introduction component 2 .
  • the radio frequency introduction member 32 may include a radio frequency introduction structure 321 and a radio frequency shielding structure 322, wherein the radio frequency shielding structure 322 is sealed and disposed on the chamber wall of the process chamber 1, A first insulating member 3222 is arranged inside, and the radio frequency introduction structure 321 is penetrated in the first insulating member 3222 and is sealedly connected with the radio frequency shielding structure 322.
  • the component 2 is electrically connected, the other end of the radio frequency introduction structure 321 is located outside the process chamber 1, and is electrically connected to the bias power supply 31, and the end of the radio frequency introduction structure 321 located in the process chamber 1 is sleeved with a second insulating member 3221,
  • the radio frequency introduction structure 321 is used for introducing the bias voltage provided by the bias power supply 31 into the bias voltage introduction component 2
  • the radio frequency shielding structure 322 is used for shielding the bias voltage introduced by the radio frequency introduction structure 321 .
  • the radio frequency shielding structure 322 is sealed on the chamber wall of the process chamber 1 , and the radio frequency introduction structure 321 is penetrated in the first insulating member 3222 and is sealedly connected with the radio frequency shielding structure 322 to ensure the sealing required by the process chamber 1
  • one end of the radio frequency introduction structure 321 is located in the process chamber 1 and is electrically connected to the bias voltage introduction component 2
  • the other end of the radio frequency introduction structure 321 is located outside the process chamber 1 and is electrically connected to the bias voltage power supply 31.
  • the bias voltage power supply 31 The provided bias voltage is first loaded onto the RF introduction structure 321 through the matcher 33, and then introduced into the bias voltage introduction component 2 through the RF introduction structure 321, so as to introduce the bias voltage provided by the bias power supply 31 located outside the process chamber 1 into the RF introduction structure 321.
  • the bias voltage introduction component 2 located in the process chamber 1, the radio frequency introduction structure 321 is penetrated in the first insulating member 3222 inside the radio frequency shielding structure 322, and one end of the radio frequency introduction structure 321 located in the process chamber 1 is sleeved with the first insulating member 3222.
  • Two insulating members 3221 to electrically insulate the RF introduction structure 321 from the chamber wall of the process chamber 1, so as to prevent the bias voltage introduced by the RF introduction structure 321 from being conducted to the chamber wall of the process chamber 1, and cannot be conducted to the chamber wall of the process chamber 1.
  • the bias voltage is introduced into the component 2 , so that the radio frequency introduction structure 321 can smoothly conduct the bias voltage to the bias voltage introduction component 2 .
  • the radio frequency shielding structure 322 is used to shield the bias voltage introduced by the radio frequency introduction structure 321 to prevent the bias voltage introduced by the radio frequency introduction structure 321 from diffusing into the process chamber 1 and causing interference to other devices in the process chamber 1, thereby avoiding
  • the bias voltage introduced by the RF introduction structure 321 interferes with the semiconductor pre-cleaning process and the semiconductor thin film deposition process.
  • the radio frequency introduction structure 321 may include a first introduction part 3211 and a second introduction part 3212 , wherein the first introduction part 3211 and the radio frequency shielding structure 322 are located in the process chamber 1
  • the outer ends are sealed and connected, one end of the first introduction part 3211 is connected to the bias power supply 31, the other end of the first introduction part 3211 extends into the first insulating member 3222, and the second introduction part 3212 and the radio frequency shielding structure 322 are located in the process
  • the ends in the chamber 1 are hermetically connected, one end of the second introduction portion 3212 is connected to the bias voltage introduction assembly 2, and the other end of the second introduction portion 3212 extends into the first insulating member 3222 and is connected to the first introduction portion 3211,
  • the second insulating member 3221 is sleeved on one end of the second lead-in portion 3212 connected to the bias lead-in component 2 .
  • the bias voltage provided by the bias power supply 31 is first loaded onto the first introduction part 3211 through the matcher 33 , then introduced into the second introduction part 3212 through the first introduction part 3211 , and then introduced into the bias introduction component 2 through the second introduction part 3212 .
  • the first introduction part 3211 is sealedly connected to the end of the RF shielding structure 322 located outside the process chamber 1
  • the second introduction part 3212 is sealed to the end of the RF shielding structure 322 located in the process chamber 1, so that the first introduction part 3211 and the second introduction part 3212 and the radio frequency shielding structure 322 are sealed, so as to ensure the sealing environment required by the process chamber 1 .
  • the first lead-in part 3211 and the second lead-in part 3212 are electrically insulated from the chamber wall of the process chamber 1 by means of the first insulator 3222 and the second insulator 3221 to avoid the first lead-in part
  • the bias voltage introduced by 3211 and the second introduction part 3212 is conducted to the chamber wall of the process chamber 1 .
  • the first introduction portion 3211 is provided with threaded holes
  • the second introduction portion 3212 is provided with external threads corresponding to the threaded holes on the first introduction portion 3211.
  • the threaded holes on the lead-in portion 3211 are screwed together, so that the first lead-in portion 3211 and the second lead-in portion 3212 are electrically connected.
  • the part of the second lead-in part 3212 sheathed with the second insulating part 3221 can be inserted into the process chamber 1 first, and at this time, a part of the second lead-in part 3212 is located in the process chamber 1
  • the second introduction part 3212 can be connected to the first conductor 241, and then the first insulating member 3222 can be sleeved on the part of the second introduction part 3212 outside the process chamber 1
  • the radio frequency shielding structure 322 is sleeved around the first insulating member 3222
  • the first introduction part 3211 is inserted into the radio frequency shielding structure 322, and is connected with the second introduction part 3212, and is connected with the radio frequency shielding structure 322. connection, so as to complete the installation of the RF lead-in 32 .
  • the first introduction part 3211 is provided with a through hole
  • the radio frequency shielding structure 322 is provided with a threaded hole corresponding to the through hole on the first introduction part 3211
  • a threaded connection such as a bolt is used to pass through the first introduction part 3211.
  • a through hole on the lead-in portion 3211 is threaded with the threaded hole on the RF shielding structure 322 , so that the first lead-in portion 3211 is connected to the RF shielding structure 322 .
  • the susceptor assembly 6 may include a susceptor body 63 , a heating lamp 61 and a power supply component 62 , wherein the susceptor body 63 is disposed at the bottom of the process chamber 1 , and the heating
  • the lamp 61 is located above the base body 63
  • the power supply component 62 is electrically connected to the heating lamp 61 for supplying power to the heating lamp 61 .
  • the heating lamp 61 is located below the wafer carrier 7 placed on the bias voltage introduction assembly 2 , and is used to emit infrared light to illuminate the wafer carrier 7 to heat the wafer carrier 7 .
  • the process chamber may further include a cooling member (not shown in the figure), and the cooling member may be provided in the base body 63 .
  • the heat generated by the base assembly 6 can be prevented from being radiated to the bottom of the process chamber 1 by means of the cooling component, so as to prevent the heat generated by the base assembly 6 from affecting the devices located at the bottom of the process chamber 1 .
  • the process chamber may further include a first reflection part 81 and a second reflection part 82 , wherein the first reflection part 81 is disposed on the base body 63 and located in the base body 63 .
  • the second reflecting member 82 is disposed on the base body 63 and surrounds the heating lamp 61 , and both the first reflecting member 81 and the second reflecting member 82 are used to reflect the infrared light generated by the heating lamp 61 Reflected towards the wafer carrier 7 .
  • the light generated by the heating lamp 61 is reflected to the wafer carrier 7 by the first reflecting member 81 and the second reflecting member 82 to improve the heating efficiency of the wafer by the base assembly 6 , thereby shortening the process time and improving the throughput.
  • the process chamber may further include a temperature measuring component 96 , the temperature measuring component 96 is disposed on the base body 63 and is in contact with the wafer carrier 7 for In the semiconductor pre-cleaning process and the semiconductor thin film deposition process, the temperature of the wafer carried on the wafer carrier 7 is checked by measuring the temperature of the wafer carrier 7 .
  • the process chamber may further include an insulating ring 91 , and the insulating ring 91 is sealed between the target material 4 and the process chamber 1 for connecting the target material 4 to the process chamber 1 .
  • the chambers 1 are sealed and electrically insulated.
  • the process chamber may further include an adapter member 92 , a first shield member 93 , a second shield member 94 and a shield ring 95 , wherein the adapter member 92 can be provided with Between the insulating ring 91 and the process chamber 1 , the first shielding member 93 is arranged on the adapter member 92 , the second shielding member 94 is arranged on the first shielding member 93 , the first shielding member 93 and the second shielding member 94 It is used to shield the inner wall of the process chamber 1 to prevent the inner wall of the process chamber 1 from being bombarded by the plasma in the semiconductor pre-cleaning process and the semiconductor thin film deposition process, and improve the stability and service life of the process chamber 1 .
  • the adapter part 92 By means of the adapter part 92, when the first shielding part 93 and the second shielding part 94 need to be maintained or replaced, only the adapter part 92 can be removed from the process chamber 1, and the first shielding part 93 and the The second shield member 94 is disassembled.
  • the component 94 can be stably disposed in the process chamber 1 , thereby facilitating maintenance or replacement of the first shielding component 93 and the second shielding component 94 .
  • the shielding ring 95 is overlapped on the first shielding member 93.
  • the base assembly 6 drives the bias introduction component 2 to support the wafer carrier 7 to be lower than the shielding ring 95. That is, during the semiconductor pre-cleaning process When the shielding ring 95 is overlapped on the first shielding member 93, during the semiconductor thin film deposition process, the base assembly 6 drives the bias introduction member 2 to support the wafer carrier 7 to be overlapped on the first shielding member 93.
  • the shadow ring 95 is lifted, that is, during the semiconductor thin film deposition process, the shadow ring 95 is overlapped on the annular edge portion of the wafer carrier 7 that does not carry the wafer, so as to avoid the annular edge of the wafer carrier 7 that does not carry the wafer Part of it is bombarded by plasma in the semiconductor thin film deposition process, increasing the service life of the wafer carrier 7 .
  • the magnetron sputtering equipment provided by the embodiment of the present invention integrates the process chamber, the bias power supply assembly, the excitation power supply assembly, the base assembly, the bias voltage introduction assembly and the target material, so that in the same process Both the semiconductor pre-cleaning process and the semiconductor thin film deposition process can be performed in the chamber, which can reduce production and maintenance costs, and avoid wafer transfer between different process chambers, thereby reducing process time and increasing throughput.

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Abstract

一种磁控溅射设备，包括工艺腔室(1)、偏压电源组件(3)和激励电源组件(5)，工艺腔室(1)中设置有基座组件(6)和偏压导入组件(2)，工艺腔室(1)的顶部设置有靶材(4)，其中，基座组件(6)位于工艺腔室(1)的底部，用于支撑晶圆承载件(7)，驱动晶圆承载件(7)移动，以及加热晶圆承载件(7)；偏压导入组件(2)位于基座组件(6)上，用于支撑晶圆承载件(7)，并且偏压导入组件(2)与晶圆承载件(7)电接触；偏压电源组件(3)与偏压导入组件(2)电连接，用于通过偏压导入组件(2)向晶圆承载件(7)加载偏置电压；激励电源组件(5)与靶材(4)电连接，用于向靶材(4)加载激励电压。该磁控溅射设备能够降低生产及维护成本，并避免晶圆在不同的工艺腔室(1)之间传输，从而缩短工艺时间并提高产能。

Description

磁控溅射设备 技术领域
本发明涉及半导体设备技术领域，具体地，涉及一种磁控溅射设备。
背景技术
在半导体氮化铝(AlN)薄膜沉积工艺过程中，在对晶圆(Wafer)进行氮化铝薄膜沉积工艺之前，需要先对晶圆进行预清洗工艺，以去除晶圆上的污染物和杂质，提高晶圆与氮化铝薄膜的粘附力，改善氮化铝薄膜沉积工艺结果，从而提升芯片性能。
预清洗工艺通常是在预清洗腔室中进行，需要通过预清洗腔室对晶圆进行加热，并向预清洗腔室内通入氩气(Ar)或氮气(N 2)，且激发预清洗腔室内的氩气或氮气形成等离子体，以借助等离子体对晶圆进行轰击，实现晶圆的预清洗。氮化铝薄膜沉积工艺通常是在沉积腔室中进行，需要通过沉积腔室对晶圆进行加热，并向沉积腔室内通入氩气和氮气，且激发沉积腔室内的氩气和氮气形成等离子体，以借助氩离子对铝靶材进行轰击产生铝原子，并通过铝原子与氮气中的氮原子结合形成氮化铝沉积至晶圆上，实现晶圆的氮化铝薄膜沉积。
现有的预清洗工艺和氮化铝薄膜沉积工艺是在两个不同的腔室中进行的，这就导致生产成本及维护成本较高，且晶圆需要在两个不同的腔室之间传输，导致整个工艺流程时间较长，设备产能较低。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种磁控溅射设备，其能够降低生产及维护成本，并避免晶圆在不同的工艺腔室之间 传输，从而缩短工艺时间并提高产能。
为实现本发明的目的而提供一种磁控溅射设备，包括工艺腔室、偏压电源组件和激励电源组件，所述工艺腔室中设置有基座组件和偏压导入组件，所述工艺腔室的顶部设置有靶材，其中，
所述基座组件位于所述工艺腔室的底部，用于支撑晶圆承载件，驱动所述晶圆承载件移动，以及加热所述晶圆承载件；
所述偏压导入组件位于所述基座组件上，用于支撑所述晶圆承载件，并且所述偏压导入组件与所述晶圆承载件电接触；
所述偏压电源组件与所述偏压导入组件电连接，用于通过所述偏压导入组件向所述晶圆承载件加载偏置电压；
所述激励电源组件与所述靶材电连接，用于向所述靶材加载激励电压。
优选的，所述偏压导入组件包括绝缘连接件、导电件和接触件，其中，所述导电件穿设在所述绝缘连接件中，且所述导电件的两端分别与所述偏压电源组件和所述接触件电连接，用于将所述偏压电源组件提供的所述偏置电压导向所述接触件；
所述绝缘连接件设置在所述基座组件上，用于将所述导电件与所述基座组件电绝缘；
所述接触件与所述晶圆承载件电接触，用于支撑所述晶圆承载件，并将所述偏置电压导入所述晶圆承载件。
优选的，所述接触件呈环状，且所述接触件上开设有至少一个开口，所述开口用于供传输晶圆的传输件穿过。
优选的，所述绝缘连接件包括第一绝缘体和第二绝缘体，所述导电件包括第一导电体和第二导电体，其中，所述第一绝缘体水平设置在所述基座组件上，与所述基座组件绝缘，所述第二绝缘体竖直设置在所述第一绝缘体上；
所述第一导电体穿设在所述第一绝缘体中，并自所述第一绝缘体伸出与 所述偏压电源组件电连接，所述第二导电体穿设在所述第二绝缘体中，并自所述第二绝缘体伸出分别与所述第一导电体和所述接触件电连接。
优选的，所述第一绝缘体包括交叉设置的第一绝缘部和第二绝缘部，所述第二绝缘体竖直设置在所述第二绝缘部上；
所述第一导电体包括交叉设置，且电连接的第一导电部和第二导电部，其中，所述第一导电部穿设在所述第一绝缘部中，且自所述第一绝缘部伸出与所述偏压电源组件电连接；所述第二导电部穿设在所述第二绝缘部中，且与所述第二导电体电连接。
优选的，所述第一绝缘体包括第一绝缘连接部和第二绝缘连接部，所述第一绝缘连接部和所述第二绝缘连接部可拆卸地连接，所述第一绝缘连接部设置有第一容纳槽，所述第二绝缘连接部设置有与所述第一容纳槽对应的第二容纳槽，所述第一容纳槽和所述第二容纳槽配合形成容纳空间，所述第一导电体设置在所述容纳空间中。
优选的，所述第二绝缘体为多个，多个所述第二绝缘体间隔设置在所述第一绝缘体上；所述第二导电体的数量与所述第二绝缘体的数量相同，且多个所述第二导电体一一对应地穿设在多个所述第二绝缘体中，并与所述接触件的不同位置电连接。
优选的，所述偏压电源组件包括偏压电源、匹配器和射频引入件，其中，所述偏压电源用于提供所述偏置电压，所述匹配器用实现阻抗匹配，所述射频引入件密封设置在所述工艺腔室的腔室壁上，所述射频引入件的一端与所述偏压导入组件电连接，所述射频引入件的另一端通过所述匹配器与所述偏压电源电连接，用于将所述偏压电源提供的所述偏置电压导入所述偏压导入组件。
优选的，所述射频引入件包括射频引入结构和射频屏蔽结构，其中，所述射频屏蔽结构密封设置在所述工艺腔室的腔室壁上，其内部设置有第一绝 缘件，所述射频引入结构穿设于所述第一绝缘件中，且与所述射频屏蔽结构密封连接，所述射频引入结构的一端位于所述工艺腔室内，与所述偏压导入组件电连接，所述射频引入结构的另一端位于所述工艺腔室外，与所述偏压电源电连接，所述射频引入结构的位于所述工艺腔室内的一端上套设有第二绝缘件，所述射频引入结构用于将所述偏压电源提供的所述偏置电压导入所述偏压导入组件，所述射频屏蔽结构用于屏蔽所述射频引入结构引入的所述偏置电压。
优选的，所述射频引入结构包括第一引入部和第二引入部，所述第一引入部与所述射频屏蔽结构位于所述工艺腔室外的端部密封连接，所述第一引入部的一端与所述偏压电源连接，所述第一引入部的另一端伸入所述第一绝缘件中，所述第二引入部与所述射频屏蔽结构位于所述工艺腔室内的端部密封连接，所述第二引入部的一端与所述偏压导入组件连接，所述第二引入部的另一端伸入所述第一绝缘件中，与所述第一引入部连接，所述第二绝缘件套设在所述第二引入部与所述偏压导入组件连接的一端上。
本发明具有以下有益效果：
本发明提供的磁控溅射设备，在半导体预清洗工艺中，借助基座组件可以支撑晶圆承载件，并驱动晶圆承载件在工艺腔室中移动至预清洗工艺位置，且加热晶圆承载件至预清洗工艺温度，借助偏压导入组件可以向晶圆承载件加载偏置电压，使通入至工艺腔室中的预清洗工艺气体形成等离子体对承载于晶圆承载件上的晶圆进行轰击，从而可以对晶圆进行半导体预清洗工艺，在半导体薄膜沉积工艺中，借助基座组件可以支撑晶圆承载件，并驱动晶圆承载件在工艺腔室中移动至薄膜沉积工艺位置，且加热晶圆承载件至薄膜沉积工艺温度，借助激励电源组件可以向靶材加载激励电压，使通入至工艺腔室中的薄膜沉积工艺气体形成等离子体对靶材进行轰击，产生靶材原子与薄膜沉积工艺气体结合形成待沉积物，从而可以对晶圆进行半导体薄膜沉积工 艺，可见，本发明提供的磁控溅射设备，通过将工艺腔室、偏压电源组件、激励电源组件、基座组件、偏压导入组件和靶材整合到一起，在同一工艺腔室中既可以进行半导体预清洗工艺，又可以进行半导体薄膜沉积工艺，从而能够降低生产及维护成本，并避免晶圆在不同的工艺腔室之间传输，从而缩短工艺时间并提高产能。
附图说明
图1为本发明实施例提供的磁控溅射设备的结构示意图；
图2为本发明实施例提供的磁控溅射设备的偏压导入组件的立体结构示意图；
图3本发明实施例提供的磁控溅射设备的偏压导入组件的侧视结构示意图；
图4本发明实施例提供的磁控溅射设备的偏压电源组件的结构示意图；
附图标记说明：
1-工艺腔室；11-进气口；12-排气口；2-偏压导入组件；21-接触件；22-第一绝缘体；221-第一绝缘部；222-第二绝缘部；223-第一绝缘连接部；224-第二绝缘连接部；23-第二绝缘体；24-导电件；241-第一导电体；242-第二导电体；2421-凸部；3-偏压电源组件；31-偏压电源；32-射频引入件；321-射频引入结构；3211-第一引入部；3212-第二引入部；322-射频屏蔽结构；3221-第二绝缘件；3222-第一绝缘件；33-匹配器；4-靶材；5-激励电源组件；6-基座组件；61-加热灯；62-供电部件；63-基座本体；7-晶圆承载件；81-第一反射部件；82-第二反射部件；91-绝缘环；92-转接部件；93-第一遮蔽部件；94-第二遮蔽部件；95-遮蔽环；96-测温部件。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来 对本发明提供的磁控溅射设备进行详细描述。
如图1所示，本实施例提供一种磁控溅射设备，包括工艺腔室1、偏压电源组件3和激励电源组件5，工艺腔室1中设置有基座组件6和偏压导入组件2，工艺腔室1的顶部设置有靶材4，其中，基座组件6位于工艺腔室1的底部，用于支撑晶圆承载件7，驱动晶圆承载件7移动，以及加热晶圆承载件7；偏压导入组件2位于基座组件6上，用于支撑晶圆承载件7，并且偏压导入组件2与晶圆承载件7电接触；偏压电源组件3与偏压导入组件2电连接，用于通过偏压导入组件2向晶圆承载件7加载偏置电压；激励电源组件5与靶材4电连接，用于向靶材4加载激励电压。
本实施例提供的磁控溅射设备，在半导体预清洗工艺中，借助基座组件6可以支撑晶圆承载件7，并驱动晶圆承载件7在工艺腔室1中移动至预清洗位置，且加热晶圆承载件7至预清洗工艺温度，借助偏压导入组件2可以向晶圆承载件7加载偏置电压，使通入至工艺腔室1中的预清洗工艺气体形成等离子体对承载于晶圆承载件7上的晶圆进行轰击，从而可以对晶圆进行半导体预清洗工艺，在半导体薄膜沉积工艺中，借助基座组件6可以支撑晶圆承载件7，并驱动晶圆承载件7在工艺腔室1中移动至薄膜沉积工艺位置，且加热晶圆承载件7至薄膜沉积工艺温度，借助激励电源组件5可以向靶材4加载激励电压，使通入至工艺腔室1中的薄膜沉积工艺气体形成等离子体对靶材4进行轰击，产生靶材原子与薄膜沉积工艺气体结合形成待沉积物，从而可以对晶圆进行半导体薄膜沉积工艺，可见，本实施例提供的磁控溅射设备，通过将工艺腔室1、偏压电源组件3、激励电源组件5、基座组件6、偏压导入组件2和靶材4整合到一起，在同一工艺腔室1既可以进行半导体预清洗工艺，又可以进行半导体薄膜沉积工艺，从而能够降低生产及维护成本，并避免晶圆在不同的工艺腔室之间传输，从而缩短工艺时间并提高产能。
如图1所示，以本实施例提供的磁控溅射设备进行氮化铝薄膜沉积工艺 为例进行说明，在进行氮化铝薄膜沉积工艺之前，需要先进行半导体预清洗工艺，在半导体预清洗工艺中，工艺腔室1中通入预清洗工艺气体，机械手(图中未示出)携带承载有晶圆(例如为芯片)的晶圆承载件7进入工艺腔室1，并将晶圆承载件7和晶圆置于偏压导入组件2以及基座组件6上，基座组件6和偏压导入组件2共同支撑晶圆承载件7，偏压导入组件2设置于基座组件6上，基座组件6驱动偏压导入组件2和晶圆承载件7移动，将晶圆承载件7移动至预清洗工艺位置，基座组件6加热晶圆承载件7至预清洗工艺温度，使承载于晶圆承载件7上的晶圆的温度达到预清洗工艺所需温度，偏压电源组件3提供的偏置电压通过与偏压电源组件3电连接并与晶圆承载件7电接触的偏压导入组件2加载至晶圆承载件7上，激发通入至工艺腔室1中的预清洗工艺气体形成等离子体，以借助预清洗工艺气体所形成等离子体对晶圆进行轰击，从而实现半导体预清洗工艺。
在半导体预清洗工艺结束后，再进行氮化铝薄膜沉积工艺，在氮化铝薄膜沉积工艺中，工艺腔室1中可以通入氩气和氮气作为薄膜沉积工艺气体，靶材4可以包括铝靶材，承载有晶圆的晶圆承载件7仍处于基座组件6和偏压导入组件2上，基座组件6驱动支撑偏压导入组件2和晶圆承载件7移动，将晶圆承载件7移动至薄膜沉积工艺位置，基座组件6持续加热晶圆承载件7，直至其达到薄膜沉积工艺温度，使承载于晶圆承载件7上的晶圆的温度达到薄膜沉积工艺所需温度，激励电源组件5向铝靶材加载激励电压，使通入至工艺腔室1中的氩气和氮气形成等离子体，借助氩离子对位于工艺腔室1顶部的铝靶材进行轰击产生铝原子，铝原子在工艺腔室1中下落，在此过程中与氮原子结合形成氮化铝沉积至晶圆上，从而实现氮化铝薄膜沉积工艺。
本实施例提供的磁控溅射设备，由于基座组件6在加热晶圆承载件7至预清洗工艺温度后，可以持续加热晶圆承载件7，使晶圆承载件7的温度达到薄膜沉积工艺温度，这样可以使基座组件6输出的加热功率的变化幅度平 缓，不会出现经常在低功率与高功率之间切换工作的情况，从而可以延长基座组件6的使用寿命，进而可以降低生产及维护成本。
在氮化铝薄膜沉积工艺的半导体预清洗工艺中，预清洗工艺气体可以包括氩气或氮气，晶圆承载件7可以包括托盘。
在一个可选的实施例中，如图1所示，工艺腔室1上可以设置有进气口11的排气口12，其中，进气口11可以设置在工艺腔室1的侧部，用于供气体进入工艺腔室1，排气口12可以设置在工艺腔室1的底部，用于供气体排出工艺腔室1。预清洗工艺气体和薄膜沉积工艺气体可以通过进气口11进入工艺腔室1中，进入工艺腔室1中的预清洗工艺气体和薄膜沉积工艺气体可以通过排气口12从工艺腔室1中排出。
在一个可选的实施例中，如图1所示，激励电源组件5可以包括直流电源，直流电源用于向靶材施加直流电压。
在一个可选的实施例中，如图2和图3所示，偏压导入组件2可以包括绝缘连接件、导电件24和接触件21，其中，导电件24穿设在绝缘连接件中，且该导电件24的两端分别与偏压电源组件3和接触件21电连接，用于将偏压电源组件3提供的偏置电压导向接触件21；绝缘连接件设置在基座组件6上，用于将导电件24与基座组件6电绝缘；接触件21与晶圆承载件7电接触，用于支撑晶圆承载件7，并将偏置电压导入晶圆承载件7。
在晶圆承载件7被置于偏压导入组件2上时，接触件21与晶圆承载件7接触，并与晶圆承载件7电导通，并且导电件24穿设在绝缘连接件中，且导电件24的两端分别与偏压电源组件3和接触件21电连接，用于将偏压电源组件3提供的偏置电压导向接触件21，即，偏压电源组件3提供的偏置电压首先加载至导电件24上，再通过导电件24传导至接触件21上，然后再通过接触件21传导至晶圆承载件7上。绝缘连接件设置在基座组件6上，用于将导电件24与基座组件6电绝缘，避免导电件24所导通的偏置电压通过基座 组件6导通至工艺腔室1，使导电件24所导通的偏置电压能够顺利地导通至接触件21上。
在一个可选的实施例中，如图2所示，接触件21可以呈环状，且接触件21上开设有至少一个开口，开口用于供传输晶圆的传输件穿过。也就是说，接触件21可以由多个圆弧状的子接触件沿圆周方向间隔分布，在整体上构成环状接触件，相邻的两个子接触件之间的间隔即为上述开口。例如，图2中示出的接触件21具有两个子接触件，二者相对于基座组件6的轴线对称设置，且这两个子接触件之间的两个间隔即为上述开口，均用于供传输晶圆的传输件穿过。
在半导体薄膜沉积工艺和半导体预清洗工艺中，承载有晶圆的晶圆承载件7可以通过机械手等传输件被传输至工艺腔室1中，接触件21上开设的开口用于供机械手等传输件穿过，使传输件能够移至晶圆承载件7下方的位置，从而可以避免接触件21与机械手等传输件之间发生干涉，导致机械手等传输件无法将晶圆和晶圆承载件7置于呈环状的接触件21上，从而使机械手等传输件能够顺利地将晶圆和晶圆承载件7置于接触件21上。
在一个可选的实施例中，如图2和图3所示，上述绝缘连接件可以包括第一绝缘体22和第二绝缘体23，导电件24可以包括第一导电体241和第二导电体242，其中，第一绝缘体22水平设置在基座组件6上，第二绝缘体23竖直设置在第一绝缘体22上；第一导电体241穿设在第一绝缘体22中，并自第一绝缘体22伸出与偏压电源组件3电连接，第二导电体242穿设在第二绝缘体23中，并自第二绝缘体23伸出分别与第一导电体241和接触件21电连接。
第一导电体241与偏压电源组件3电连接，第二导电体242分别与第一导电体241和接触件21电连接，偏压电源组件3提供的偏置电压首先加载至第一导电体241上，再通过第一导电体241传导至第二导电体242上，再通 过第二导电体242传导至接触件21上。
上述第一绝缘体22和第二绝缘体23既可以实现将第一导电体241和第二导电体242与基座组件6电绝缘，避免第一导电体241和第二导电体242所导通的偏置电压通过基座组件6导通至工艺腔室1，又可以实现对第一导电体241、第二导电体242和接触件21的支撑和固定，保证这些部件能够被稳固地固定在基座组件6上。
在一个可选的实施例中，如图3所示，第二导电体242的两端可以均设置有外螺纹，且第二导电体242的两端中的一端可以设置有凸部2421，第一导电体241上可以设置有具有内螺纹的孔，接触件21上可以设置有通孔，通过将第二导电体242的一端的外螺纹旋入第一导电体241上的具有内螺纹的孔中，以使第二导电体242和第一导电体241螺纹连接，同时电连接，通过将第二导电体242的另一端穿过接触件21上的通孔，并使凸部2421与接触件21的下表面相抵，再通过螺母与第二导电体242的另一端的外螺纹螺纹配合，可以使第二导电体242和接触件21螺纹连接，同时电连接。上述凸部2421用于支撑接触件21。
在一个可选的实施例中，如图2所示，第一绝缘体22包括交叉设置的第一绝缘部221和第二绝缘部222，第二绝缘体23竖直设置在第二绝缘部222上；第一导电体241包括交叉设置，且电连接的第一导电部和第二导电部(图中未示出)，其中，第一导电部沿第一绝缘部221的延伸方向穿设在第一绝缘部221中，且自第一绝缘部221伸出与偏压电源组件3电连接；第二导电部沿第二绝缘部222的延伸方向穿设在第二绝缘部222中，且与第二导电体242电连接。容易理解，上述第一绝缘部221和第二绝缘部222交叉设置的形状与分别穿设在二者中的第一导电部和第二导电部交叉设置的形状相匹配。这样设置，可以进一步提高偏压导入组件2的支撑稳定性。
在一个可选的实施例中，如图2所示，第一绝缘部221和第二绝缘部222 垂直交叉设置，即，第一绝缘部221和第二绝缘部222相互垂直，对应地，第一导电部和第二导电部可以垂直交叉设置，但是，第一绝缘部221和第二绝缘部222之间的夹角以及第一导电部和第二导电部之间的夹角并不以此为限。
在一个可选的实施例中，如图2所示，第一绝缘部221为一个，第二绝缘部222为两个，两个第二绝缘部222平行，且间隔设置，并均与第一绝缘部221交叉设置，对应地，上述第一导电部为一个，第二导电部为两个，两个第二导电部分别沿第二绝缘部222的延伸方向穿设于两个第二绝缘部222中，第一导电部沿第一绝缘部221的延伸方向穿设于第一绝缘部221中，这样可以进一步提高偏压导入组件2的支撑稳定性，但是，第二绝缘部222的数量均不以此为限，还可以为一个、三个或更多个，上述第二导电部的数量与第二绝缘部222的数量相同，且一一对应地设置。
在一个可选的实施例中，如图3所示，第一绝缘体22可以包括第一绝缘连接部223和第二绝缘连接部224，第一绝缘连接部223和第二绝缘连接部224可拆卸地连接，第一绝缘连接部223设置有第一容纳槽，第二绝缘连接部224设置有与第一容纳槽对应的第二容纳槽，第一容纳槽和第二容纳槽配合形成容纳空间，第一导电体241设置在容纳空间中。
如图2和图3所示，第一绝缘连接部223分为两个部分，第二绝缘连接部224分为两个部分，其中，第一绝缘连接部223的第一部分对应地与第二绝缘连接部224的第一部分可拆卸地连接，构成第一绝缘部221；第一绝缘连接部223的第二部分对应地与第二绝缘连接部224的第二部分可拆卸地连接，构成第二绝缘部222。并且，第一绝缘连接部223的第一部分与第二绝缘连接部224的第一部分的内部构成上述容纳空间的第一部分，第一绝缘连接部223的第二部分与第二绝缘连接部224的第二部分的内部构成上述容纳空间的第一部分，且容纳空间的第一部分和第二部分通过对应设置在第一绝 缘连接部223和第二绝缘连接部224上的通孔相连通。在安装第一绝缘体22时，可以先将第一导电体241置于上述第一绝缘连接部223(包含第一部分和第二部分)的第一容纳槽中，再将上述第二绝缘连接部224(包含第一部分和第二部分)扣合在第一绝缘连接部223上，此时，第二绝缘连接部224的第二容纳槽和第一绝缘连接部223的第一容纳槽相对应配合形成容纳空间，第一导电体241设置在容纳空间中。
可选的，第一绝缘连接部223和第二绝缘连接部224可拆卸地连接的方式具体包括：第一绝缘连接部223和第二绝缘连接部224卡接，再通过螺栓等螺纹连接件穿过第二绝缘连接部224和第一绝缘连接部223上的通孔，并与基座组件6螺纹连接，以将第一绝缘连接部223和第二绝缘连接部224固定在基座组件6上。
在将第一绝缘体22安装在基座组件6上之后，可以将第二导电体242插入第二绝缘部222并与第一导电体241电连接，再将第二绝缘体23套在第二导电体242周围，最后将第二导电体242与接触件21电连接，从而完成偏压导入组件2的安装。
在一个可选的实施例中，如图2所示，绝缘连接件可以包括多个第二绝缘体23，且多个第二绝缘体23间隔设置在第一绝缘体22上，对应地，导电件24可以包括多个第二导电体242，且多个第二导电体242一一对应地设置在多个第二绝缘体23中，每个第二导电体242均与接触件21电连接。通过设置多个第二绝缘体23，可以在不同的位置处对接触件21进行支撑，从而可以提高偏压导入组件2的支撑稳定性。
在一个可选的实施例中，如图2所示，绝缘连接件可以包括四个第二绝缘体23，其中两个第二绝缘体23间隔设置在其中一个第二绝缘部222上，另外两个第二绝缘体23间隔设置在另一个第二绝缘部222上。优选的，同一第二绝缘部222上的两个第二绝缘体23的一端分别连接在第二绝缘部222 的靠近两端的位置处，从而可以使第二绝缘部222受力均匀。对应地，导电件24可以包括四个第二导电体242，且一一对应地设置在四个第二绝缘体23中，其中两个第二导电体242与接触件21的其中一个子接触件电连接，另外两个第二导电体242与另一个子接触件电连接，优选的，与同一子接触件电连接的两个第二导电体242分别连接在该子接触件的靠近两端的位置处，从而可以稳定地支撑该子接触件。但是，绝缘连接件和第二导电件24各自的数量并不以此为限，还可以是两个，三个或者更多个。
在一个可选的实施例中，如图1所示，偏压电源组件3可以包括偏压电源31、匹配器33和射频引入件32，其中，偏压电源31用于提供偏置电压，匹配器33用于实现阻抗匹配，射频引入件32密封设置在工艺腔室1的腔室壁上，射频引入件32的一端与偏压导入组件2电连接，射频引入件32的另一端通过匹配器33与偏压电源31电连接，用于将偏压电源31提供的偏置电压导入偏压导入组件2。
如图1所示，偏压电源31和匹配器33位于工艺腔室1外，偏压导入组件2位于工艺腔室1内，射频引入件32密封设置在工艺腔室1的腔室壁上，以保证工艺腔室1所需的密封环境，射频引入件32的一端与偏压导入组件2电连接，另一端通过匹配器33与偏压电源31电连接，以将位于工艺腔室1外的偏压电源31提供的偏置电压导入位于工艺腔室1内的偏压导入组件2，即，偏压电源31提供的偏置电压首先经过匹配器33加载至射频引入件32上，再通过射频引入件32导入偏压导入组件2。
借助匹配器33进行阻抗匹配，可以尽可能地减小反射功率，以使足够的偏置电压导入偏压导入组件2，避免偏置电压的浪费，从而提高偏置电压的利用率，进而缩短工艺时间并提高产能。
在一个可选的实施例中，如图1所示，偏压电源31可以包括射频电源。射频电源用于向偏压导入组件2加载射频电压。
在一个可选的实施例中，如图4所示，射频引入件32可以包括射频引入结构321和射频屏蔽结构322，其中，射频屏蔽结构322密封设置在工艺腔室1的腔室壁上，其内部设置有第一绝缘件3222，射频引入结构321穿设于第一绝缘件3222中，且与射频屏蔽结构322密封连接，射频引入结构321的一端位于工艺腔室1内，与偏压导入组件2电连接，射频引入结构321的另一端位于工艺腔室1外，与偏压电源31电连接，射频引入结构321的位于工艺腔室1内的一端上套设有第二绝缘件3221，射频引入结构321用于将偏压电源31提供的偏置电压导入偏压导入组件2，射频屏蔽结构322用于屏蔽射频引入结构321引入的偏置电压。
射频屏蔽结构322密封设置在工艺腔室1的腔室壁上，射频引入结构321穿设于第一绝缘件3222中，且与射频屏蔽结构322密封连接，以保证工艺腔室1所需的密封环境，射频引入结构321的一端位于工艺腔室1内，与偏压导入组件2电连接，射频引入结构321的另一端位于工艺腔室1外，与偏压电源31电连接，偏压电源31提供的偏置电压首先经过匹配器33加载至射频引入结构321上，再通过射频引入结构321导入偏压导入组件2，以将位于工艺腔室1外的偏压电源31提供的偏置电压导入位于工艺腔室1内的偏压导入组件2，射频引入结构321穿设于射频屏蔽结构322内部的第一绝缘件3222中，射频引入结构321位于工艺腔室1内的一端上套设有第二绝缘件3221，以使射频引入结构321与工艺腔室1的腔室壁电绝缘，避免射频引入结构321引入的偏置电压被传导至工艺腔室1的腔室壁上，而无法传导至偏压导入组件2上，从而使射频引入结构321能够顺利地将偏置电压导通至偏压导入组件2上。射频屏蔽结构322用于屏蔽射频引入结构321引入的偏置电压，以避免射频引入结构321引入的偏置电压扩散至工艺腔室1内，对工艺腔室1内的其他器件造成干扰，从而避免射频引入结构321引入的偏置电压对半导体预清洗工艺和半导体薄膜沉积工艺造成干扰。
在一个可选的实施例中，如图4所示，射频引入结构321可以包括第一引入部3211和第二引入部3212，其中，第一引入部3211与射频屏蔽结构322位于工艺腔室1外的端部密封连接，第一引入部3211的一端与偏压电源31连接，第一引入部3211的另一端伸入第一绝缘件3222中，第二引入部3212与射频屏蔽结构322位于工艺腔室1内的端部密封连接，第二引入部3212的一端与偏压导入组件2连接，第二引入部3212的另一端伸入第一绝缘件3222中，与第一引入部3211连接，第二绝缘件3221套设在第二引入部3212与偏压导入组件2连接的一端上。
偏压电源31提供的偏置电压首先经过匹配器33加载至第一引入部3211上，再通过第一引入部3211导入第二引入部3212，再通过第二引入部3212导入偏压导入组件2。第一引入部3211与射频屏蔽结构322位于工艺腔室1外的端部密封连接，第二引入部3212与射频屏蔽结构322位于工艺腔室1内的端部密封连接，以使第一引入部3211和第二引入部3212与射频屏蔽结构322之间密封，从而保证工艺腔室1所需的密封环境。第一引入部3211的另一端伸入第一绝缘件3222中，第二引入部3212的另一端伸入第一绝缘件3222中，第二绝缘件3221套设在第二引入部3212与偏压导入组件2连接的一端上，以借助第一绝缘件3222和第二绝缘件3221使第一引入部3211和第二引入部3212与工艺腔室1的腔室壁电绝缘，避免第一引入部3211和第二引入部3212引入的偏置电压被传导至工艺腔室1的腔室壁上。
可选的，第一引入部3211上设置螺纹孔，第二引入部3212上设置与第一引入部3211上的螺纹孔对应的外螺纹，通过使第二引入部3212上的外螺纹与第一引入部3211上的螺纹孔螺纹配合，以使第一引入部3211与第二引入部3212电连接。
在安装射频引入件32时，可以先将套设有第二绝缘件3221的第二引入部3212的部分插入至工艺腔室1内，此时，第二引入部3212的一部分位于 工艺腔室1内，另一部分位于工艺腔室1外，之后可以将第二引入部3212与第一导电体241连接，再将第一绝缘件3222套设在第二引入部3212位于工艺腔室1外的部分的周围，再将射频屏蔽结构322套设在第一绝缘件3222的周围，最后将第一引入部3211插入至射频屏蔽结构322中，并与第二引入部3212连接，且与射频屏蔽结构322连接，从而完成射频引入件32的安装。
在一个可选的实施例中，第一引入部3211上设置通孔，射频屏蔽结构322上设置与第一引入部3211上的通孔对应的螺纹孔，通过例如螺栓等螺纹连接件穿过第一引入部3211上的通孔，并与射频屏蔽结构322上的螺纹孔螺纹配合，以使第一引入部3211与射频屏蔽结构322连接。
在一个可选的实施例中，如图1所示，基座组件6可以包括基座本体63、加热灯61和供电部件62，其中，基座本体63设置在工艺腔室1的底部，加热灯61位于基座本体63上方，供电部件62与加热灯61电连接，用于向加热灯61供电。加热灯61位于置于偏压导入组件2上的晶圆承载件7的下方，用于发出红外光照射晶圆承载件7，以加热晶圆承载件7。
在一个可选的实施例中，如图1所示，工艺腔室可以还包括冷却部件(图中未示出)，冷却部件可以设置在基座本体63中。
借助冷却部件可以避免基座组件6产生的热量向工艺腔室1的底部辐射，以避免基座组件6产生的热量对工艺腔室1位于底部的器件造成影响。
在一个可选的实施例中，如图1所示，工艺腔室还可以包括第一反射部件81和第二反射部件82，其中，第一反射部件81设置在基座本体63上，并位于加热灯61的下方，第二反射部件82设置在基座本体63上，并环绕在加热灯61的周围，第一反射部件81和第二反射部件82均用于将加热灯61产生的红外光反射向晶圆承载件7。借助第一反射部件81和第二反射部件82将加热灯61产生的光反射向晶圆承载件7，以提高基座组件6对晶圆的加热效率，从而缩短工艺时间并提高产能。
在一个可选的实施例中，如图1所示，工艺腔室可以还包括测温部件96，该测温部件96设置在基座本体63上，并与晶圆承载件7接触，用于在半导体预清洗工艺和半导体薄膜沉积工艺中通过对晶圆承载件7进行测温，以对承载于晶圆承载件7上的晶圆的温度进行检查。
在一个可选的实施例中，如图1所示，工艺腔室可以还包括绝缘环91，绝缘环91密封设置在靶材4与工艺腔室1之间，用于使靶材4与工艺腔室1之间密封并电绝缘。
在一个可选的实施例中，如图1所示，工艺腔室还可以包括转接部件92、第一遮蔽部件93、第二遮蔽部件94和遮蔽环95，其中，转接部件92可以设置在绝缘环91与工艺腔室1之间，第一遮蔽部件93设置在转接部件92上，第二遮蔽部件94设置在第一遮蔽部件93上，第一遮蔽部件93和第二遮蔽部件94用于对工艺腔室1的内壁进行遮蔽，以避免工艺腔室1的内壁被半导体预清洗工艺和和半导体薄膜沉积工艺中的等离子轰击，提高工艺腔室1的稳定性和使用寿命。借助转接部件92可以在需要对第一遮蔽部件93和第二遮蔽部件94进行维护或更换时，仅将转接部件92从工艺腔室1上拆下，就可以将第一遮蔽部件93和第二遮蔽部件94拆卸。在采用新的规格尺寸不同的第一遮蔽部件93和第二遮蔽部件94时，仅需更换与之配合对应的新的转接部件92，就能够使新的第一遮蔽部件93和第二遮蔽部件94能够稳定的设置在工艺腔室1内，从而便于第一遮蔽部件93和第二遮蔽部件94的维护或更换。
遮蔽环95搭接在第一遮蔽部件93上，在半导体预清洗工艺时，基座组件6驱动使偏压导入组件2支撑晶圆承载件7低于遮蔽环95，即，在半导体预清洗工艺时，遮蔽环95搭接在第一遮蔽部件93上，在半导体薄膜沉积工艺时，基座组件6驱动使偏压导入组件2支撑晶圆承载件7将搭接在第一遮蔽部件93上的遮蔽环95抬起，即，在半导体薄膜沉积工艺时，遮蔽环95 搭接在晶圆承载件7未承载晶圆的环形边缘部分上，以避免晶圆承载件7未承载晶圆的环形边缘部分被半导体薄膜沉积工艺中的等离子体轰击，提高晶圆承载件7的使用寿命。
综上所述，本发明实施例提供的磁控溅射设备，通过将工艺腔室、偏压电源组件、激励电源组件、基座组件、偏压导入组件和靶材整合到一起，在同一工艺腔室中既可以进行半导体预清洗工艺，又可以进行半导体薄膜沉积工艺，从而能够降低生产及维护成本，并避免晶圆在不同的工艺腔室之间传输，从而缩短工艺时间并提高产能。
可以解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (10)

  1. 一种磁控溅射设备，其特征在于，包括工艺腔室、偏压电源组件和激励电源组件，所述工艺腔室中设置有基座组件和偏压导入组件，所述工艺腔室的顶部设置有靶材，其中，
    所述基座组件位于所述工艺腔室的底部，用于支撑晶圆承载件，驱动所述晶圆承载件移动，以及加热所述晶圆承载件；
    所述偏压导入组件位于所述基座组件上，用于支撑所述晶圆承载件，并且所述偏压导入组件与所述晶圆承载件电接触；
    所述偏压电源组件与所述偏压导入组件电连接，用于通过所述偏压导入组件向所述晶圆承载件加载偏置电压；
    所述激励电源组件与所述靶材电连接，用于向所述靶材加载激励电压。
  2. 根据权利要求1所述的磁控溅射设备，其特征在于，所述偏压导入组件包括绝缘连接件、导电件和接触件，其中，所述导电件穿设在所述绝缘连接件中，且所述导电件的两端分别与所述偏压电源组件和所述接触件电连接，用于将所述偏压电源组件提供的所述偏置电压导向所述接触件；
    所述绝缘连接件设置在所述基座组件上，用于将所述导电件与所述基座组件电绝缘；
    所述接触件与所述晶圆承载件电接触，用于支撑所述晶圆承载件，并将所述偏置电压导入所述晶圆承载件。
  3. 根据权利要求2所述的磁控溅射设备，其特征在于，所述接触件呈环状，且所述接触件上开设有至少一个开口，所述开口用于供传输晶圆的传输件穿过。
  4. 根据权利要求2所述的磁控溅射设备，其特征在于，所述绝缘连接 件包括第一绝缘体和第二绝缘体，所述导电件包括第一导电体和第二导电体，其中，所述第一绝缘体水平设置在所述基座组件上，所述第二绝缘体竖直设置在所述第一绝缘体上；
    所述第一导电体穿设在所述第一绝缘体中，并自所述第一绝缘体伸出与所述偏压电源组件电连接，所述第二导电体穿设在所述第二绝缘体中，并自所述第二绝缘体伸出分别与所述第一导电体和所述接触件电连接。
  5. 根据权利要求4所述的磁控溅射设备，其特征在于，所述第一绝缘体包括交叉设置的第一绝缘部和第二绝缘部，所述第二绝缘体竖直设置在所述第二绝缘部上；
    所述第一导电体包括交叉设置，且电连接的第一导电部和第二导电部，其中，所述第一导电部穿设在所述第一绝缘部中，且自所述第一绝缘部伸出与所述偏压电源组件电连接；所述第二导电部穿设在所述第二绝缘部中，且与所述第二导电体电连接。
  6. 根据权利要求4所述的磁控溅射设备，其特征在于，所述第一绝缘体包括第一绝缘连接部和第二绝缘连接部，所述第一绝缘连接部和所述第二绝缘连接部可拆卸地连接，所述第一绝缘连接部设置有第一容纳槽，所述第二绝缘连接部设置有与所述第一容纳槽对应的第二容纳槽，所述第一容纳槽和所述第二容纳槽配合形成容纳空间，所述第一导电体设置在所述容纳空间中。
  7. 根据权利要求4所述的磁控溅射设备，其特征在于，所述第二绝缘体为多个，多个所述第二绝缘体间隔设置在所述第一绝缘体上；所述第二导电体的数量与所述第二绝缘体的数量相同，且多个所述第二导电体一一对应地穿设在多个所述第二绝缘体中，并与所述接触件的不同位置电连接。
  8. 根据权利要求1所述的磁控溅射设备，其特征在于，所述偏压电源组件包括偏压电源、匹配器和射频引入件，其中，所述偏压电源用于提供所述偏置电压，所述匹配器用实现阻抗匹配，所述射频引入件密封设置在所述工艺腔室的腔室壁上，所述射频引入件的一端与所述偏压导入组件电连接，所述射频引入件的另一端通过所述匹配器与所述偏压电源电连接，用于将所述偏压电源提供的所述偏置电压导入所述偏压导入组件。
  9. 根据权利要求8所述的磁控溅射设备，其特征在于，所述射频引入件包括射频引入结构和射频屏蔽结构，其中，所述射频屏蔽结构密封设置在所述工艺腔室的腔室壁上，其内部设置有第一绝缘件，所述射频引入结构穿设于所述第一绝缘件中，且与所述射频屏蔽结构密封连接，所述射频引入结构的一端位于所述工艺腔室内，与所述偏压导入组件电连接，所述射频引入结构的另一端位于所述工艺腔室外，与所述偏压电源电连接，所述射频引入结构的位于所述工艺腔室内的一端上套设有第二绝缘件，所述射频引入结构用于将所述偏压电源提供的所述偏置电压导入所述偏压导入组件，所述射频屏蔽结构用于屏蔽所述射频引入结构引入的所述偏置电压。
  10. 根据权利要求9所述的磁控溅射设备，其特征在于，所述射频引入结构包括第一引入部和第二引入部，所述第一引入部与所述射频屏蔽结构位于所述工艺腔室外的端部密封连接，所述第一引入部的一端与所述偏压电源连接，所述第一引入部的另一端伸入所述第一绝缘件中，所述第二引入部与所述射频屏蔽结构位于所述工艺腔室内的端部密封连接，所述第二引入部的一端与所述偏压导入组件连接，所述第二引入部的另一端伸入所述第一绝缘件中，与所述第一引入部连接，所述第二绝缘件套设在所述第二引入部与所述偏压导入组件连接的一端上。
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