WO2022133943A1

WO2022133943A1 - Reactor and growth device

Info

Publication number: WO2022133943A1
Application number: PCT/CN2020/139144
Authority: WO
Inventors: 刘南柳; 张浩东; 申健
Original assignee: 华为技术有限公司; 北京大学东莞光电研究院
Priority date: 2020-12-24
Filing date: 2020-12-24
Publication date: 2022-06-30
Also published as: CN117062945A

Abstract

Embodiments of the present application provide a reactor and a growth device. A reaction chamber is provided inside a reactor body; an air inlet and an air outlet are respectively provided on two opposite side walls of the reactor body; both the air inlet and the air outlet are communicated with the reaction chamber; the reaction chamber is divided into a first chamber and a second chamber; the air inlet comprises a first air inlet and a second air inlet; the first air inlet and the air outlet are separately communicated with the first chamber; the second air inlet is communicated with the second chamber; and a plurality of flow control through holes communicating the first chamber and the second chamber are formed between the first chamber and the second chamber, such that the reaction conversion rate of a reaction gas and a metal source can be improved, thereby improving the growth rate of crystals.

Description

Reactors and Growth Devices

technical field

The embodiments of the present application relate to the technical field of semiconductors, and in particular, to a reactor and a growth apparatus.

Background technique

In the development of semiconductor science and technology, vapor phase epitaxy has played an important role. Vapor phase epitaxy is a single crystal thin layer growth method, which refers to the deposition of semiconductor materials on a single wafer in a gas phase state, so that it grows a layer with a thickness and resistivity that meets the requirements along the crystallographic axis of the single wafer. single crystal layer. Usually, before the single crystal layer is grown by vapor phase epitaxy, for example, before the group III wide bandgap nitride semiconductor material is grown by vapor phase epitaxy, it is necessary to react halide gas or halogen gas with a group III metal source in a reactor to form a metal-containing material. The precursor, and then the metal-containing precursor, is transported by a carrier gas (eg, nitrogen or hydrogen) to the surface of the substrate to react with ammonia gas to form a nitride semiconductor material.

In the prior art, when a halide gas or a halogen gas and a Group III metal source are reacted in a reactor to generate a metal-containing precursor, the reactor used is generally a cylindrical reactor, and the cylindrical reactor includes: Air inlet pipe, cylinder container and gas outlet pipe, the air inlet pipe includes an air inlet connection pipe and a spiral nozzle, and the spiral nozzle is located in the cylindrical container, and the reaction gas (such as halide gas or halogen gas) is introduced from the gas inlet pipe After the cylindrical container, it reacts with the surface metal of the metal source in the cylindrical container, and then the reacted product (containing metal precursor) and the unreacted gas are output from the gas outlet pipe to the cylindrical container.

However, when the above reactor is used, the reaction conversion of the reaction gas and the metal source is low, resulting in a low growth rate of crystals.

SUMMARY OF THE INVENTION

The embodiments of the present application provide a reactor and a growth device, which can improve the reaction conversion rate of the reaction gas and the metal source, thereby improving the growth rate of crystals.

A first aspect of the embodiments of the present application provides a reactor, which at least includes: a reactor body; the reactor body has a reaction chamber inside, and two opposite side walls of the reactor body are respectively provided with inlets. an air port and an air outlet, both the air inlet and the air outlet communicate with the reaction chamber; the reaction chamber is divided into a first chamber and a second chamber, and the air inlet includes a first chamber an air inlet and a second air inlet, the first air inlet and the air outlet are respectively communicated with the first chamber, and the second air inlet is communicated with the second chamber; and A plurality of control flow holes are arranged between the first chamber and the second chamber to communicate the first chamber and the second chamber.

In the reactor provided by the embodiments of the present application, different air inlets are arranged on the reactor body, the first air inlet is communicated with the first chamber, the second air inlet is communicated with the second chamber, and the third air inlet is communicated with the second chamber. The first chamber and the second chamber are communicated through a plurality of control flow holes, so that the gas entering the second chamber through the second air inlet can be sprayed into the first chamber through the plurality of control flow holes, forming a dense The gas curtain layer can promote the reaction gas entering the first chamber through the second air inlet to fully contact with the metal source in the first chamber, thereby effectively improving the reaction conversion efficiency between the reaction gas and the metal source, and to a certain extent. crystal growth rate.

In a possible implementation, the second chamber is located above the first chamber. In this way, when the gas entering the second chamber from the second air inlet is sprayed into the first chamber through the plurality of control flow holes, an air curtain layer from top to bottom can be formed, and the gas in the second chamber passes through the plurality of control flow holes. The holes are sprayed into the first chamber from top to bottom, which can have a greater impact on the reaction gas entering the first chamber through the second air inlet, so that the reaction gas can more fully interact with the metal source in the first chamber touch.

In a possible implementation manner, a first baffle is arranged between the first chamber and the second chamber, and the first baffle is provided with a plurality of the flow control holes, so as to The first chamber is communicated with the second chamber. By arranging a first baffle between the first chamber and the second chamber, the reaction chamber can be partitioned into two chambers, and by having a plurality of the flow control holes on the first baffle, the The first chamber is communicated with the second chamber, and the process is simple and easy to realize.

In a possible implementation manner, a plurality of the control flow holes are evenly distributed on the first baffle plate; or, a plurality of the control flow holes are distributed on the first baffle plate at intervals, and the In the direction from the end of the first baffle plate close to the air inlet to the end of the first baffle plate close to the air outlet, the density of the control flow holes gradually increases; The control flow holes are distributed on the first baffle at intervals, and in a direction from an end of the first baffle close to the air inlet to an end of the first baffle close to the air outlet, the The density of the control flow holes gradually decreases.

In this way, when the gas in the second chamber is sprayed into the first chamber through the plurality of control flow holes, an air curtain layer can be formed relatively uniformly, so that the gas pair in the second chamber enters the first chamber through the second air inlet The reaction gas produces a uniform impact. Or, when the gas in the second chamber is sprayed into the first chamber through the plurality of control flow holes, in the direction from the end of the first baffle close to the air inlet to the end of the first baffle close to the air outlet, the second The gas in the chamber forms a denser and denser gas curtain, thereby producing increasingly denser impact on the reaction gas entering the first chamber through the second gas inlet. Alternatively, when the gas in the second chamber is sprayed into the first chamber through the plurality of control flow holes, in the direction from the end of the first baffle plate close to the air outlet to the end of the first baffle plate close to the air inlet The gas in the chamber forms a denser and denser gas curtain, thereby producing increasingly denser impact on the reaction gas entering the first chamber through the second gas inlet. Alternatively, the specific distribution mode of the plurality of control flow holes on the first baffle can also be flexibly set according to the requirements of the actual application scenario.

In a possible implementation manner, the diameter of the control flow hole is 50nm-500um.

In a possible implementation manner, the diameter of the control flow hole is 20um-80um. The diameter of the control flow hole is set to be small, so that when the gas entering the second chamber is sprayed into the first chamber through a plurality of control flow holes, a relatively dense air curtain layer is formed, so that the reaction gas can interact with the first chamber. The metal source in the room is more fully contacted.

In a possible implementation manner, the distance between two adjacent flow control holes in the plurality of control flow holes is 1-3 mm. By setting the distance between two adjacent control flow holes in the plurality of control flow holes to be small, the interval between the two adjacent control flow holes can be reduced, so that the gas entering the second chamber can pass through When the plurality of control flow holes are sprayed into the first chamber, a denser gas curtain layer is formed, so that the reaction gas can be more fully contacted with the metal source in the first chamber.

In a possible implementation manner, each of the flow control holes is formed with an extension extending from a side facing the first chamber. By forming an extension on the side of each control flow hole facing the first chamber, a spout-type structure can be formed at the position of each control flow hole, through which the gas in the second chamber enters the first chamber. When the chamber is used, a greater impact can be generated on the reaction gas in the first chamber, so that the reaction gas can more fully contact the metal source in the first chamber.

In a possible implementation manner, the cross-sectional shape of the extension portion is the same as the shape of the flow control hole.

In a possible implementation manner, the extension length of the extension portion is 1-3 mm.

In a possible implementation manner, a second baffle is arranged between the reaction chamber and the gas outlet; one end of the second baffle is connected to the lower bottom wall of the reactor body, and the A first gap is formed between the other end of the second baffle and the upper bottom wall of the reactor body.

A second baffle is arranged between the reaction chamber and the gas outlet, one end of the second baffle is connected to the lower bottom wall of the reactor body, and the other end of the second baffle is connected to the upper bottom wall of the reactor body A first gap is formed. Part of the incompletely reacted reaction gas in the first chamber and the metal source vapor in the first chamber are blocked by the second baffle and return to form a vortex after encountering the second baffle. Part of the incompletely reacted reaction gas in the chamber can contact and react more fully with the metal source steam in the first chamber, and the gas generated after the reaction flows out of the reaction chamber through the first gap.

In a possible implementation manner, the reaction chamber further has at least one channel, the inlet of the channel communicates with the first chamber, and the outlet of the channel communicates with the gas outlet.

By having at least one channel in the reaction chamber, the inlet of the channel is communicated with the first chamber, and the outlet of the channel is communicated with the gas outlet, so that the circulation path in the reaction chamber can be increased, so that the partially reacted incompletely reacted in the first chamber can be increased. The reaction gas and the metal source vapor in the first chamber can further react in the channel, thereby effectively improving the reaction conversion efficiency between the reaction gas and the metal source, and increasing the crystal growth rate to a certain extent.

In a possible implementation manner, the reaction chamber has two channels; the inlet of the first channel of the two channels is communicated with the first chamber, and the outlet of the first channel is connected to the first channel. The inlet of the second channel of the two channels is communicated with, and the outlet of the second channel is communicated with the gas outlet; and the inlet of the first channel and the outlet of the second channel are located in the reactor the same side of the body.

There are two channels in the reaction chamber, the inlet of the first channel is communicated with the first chamber, the outlet of the first channel is communicated with the inlet of the second channel, the outlet of the second channel is communicated with the gas outlet, and the outlet of the first channel is communicated with the gas outlet. The inlet and the outlet of the second channel are located on the same side of the reactor body, which can further increase the flow path in the reaction chamber and save the space occupied by the first channel and the second channel in the reaction chamber.

In a possible implementation, at least one of the channels is provided with a flow blocking structure; the channel has a first side wall, a second side wall, an upper bottom wall and a lower bottom wall; the flow blocking structure is related to all the flow blocking structures. Any one, any two or any three of the first side wall, the second side wall, the upper bottom wall and the lower bottom wall are fixedly connected, and the flow blocking structure is connected to the first side wall. A second gap is formed between at least one of the side wall, the second side wall, the upper bottom wall, and the lower bottom wall.

By arranging a blocking structure in at least one channel, the partially reacted reactive gas in the first chamber and the metal source vapor in the first chamber are blocked by the blocking structure to form a vortex after entering the channel, which can effectively prevent incomplete reaction. The escape of the reacted reactant gas and the metal source steam enables the partially reacted reactant gas and the metal source steam in the first chamber to react more fully, and the gas generated after the full reaction flows out of the reaction chamber through the second gap, thereby ensuring that conversion and crystal growth rate.

In a possible implementation manner, the bluff structure includes: at least one bluff body; the bluff body is fixedly connected to one of the upper bottom wall and the lower bottom wall of the channel, and the bluff body is connected to one of the upper bottom wall and the lower bottom wall of the channel. The second gap is formed between the other of the upper bottom wall and the lower bottom wall of the channel.

By arranging one or more bluff bodies in at least one channel, the bluff body is fixedly connected with one of the upper bottom wall and the lower bottom wall of the channel, and the bluff body is connected with the upper bottom wall and the lower bottom wall of the channel. A second gap is formed between the other, so that after the partially reacted reactant gas in the first chamber and the metal source vapor in the first chamber enter the channel, the upper bottom wall and the lower bottom wall of the channel are caused by the bluff body due to the bluff body. One of them is fixedly connected, and part of the incompletely reacted reactant gas and the metal source vapor are blocked to form a vortex, which can effectively prevent the incompletely reacted reactant gas and the metal source vapor from escaping, so that part of the incompletely reacted gas in the first chamber is prevented from escaping. The reaction gas and the metal source steam can react more fully, and then the gas generated after the sufficient reaction flows out of the reaction chamber through the second gap formed between the bluff body and the other one of the upper bottom wall and the lower bottom wall of the channel, thereby Ensure conversion rate and crystal growth rate.

In a possible implementation manner, the number of the bluff bodies is multiple; and the multiple bluff bodies are distributed at intervals along the extending direction of the channel. By increasing the number of blister fluids in the channel, it can further block the incompletely reacted reactant gas and the metal source vapor, and thus can more effectively prevent the incompletely reacted reactant gas and metal source vapor from escaping, so that the first cavity can be prevented from escaping. The incompletely reacted reaction gas in the chamber and the metal source steam can further fully react.

In a possible implementation manner, the bluff body is a columnar structure.

In a possible implementation manner, the bluff body is a helical structure. By arranging the fluid in a spiral structure, the contact area between the outer surface of the bluff body and the gas can be increased, so that the bluff body can play a better blocking effect on the gas.

In a possible implementation manner, the axial direction of the bluff body is perpendicular to the extending direction of the channel. In this way, the blocking effect of the bluff body on the gas in the channel can be further increased.

In a possible implementation manner, the reactor is a Group III metal source reactor.

In a possible implementation manner, the reactor is a gallium source reactor.

In a possible implementation manner, the reaction chamber of the reactor body has liquid gallium.

In a possible implementation manner, the gas introduced into the first gas inlet of the reactor is halide gas or halogen gas.

In a possible implementation manner, when the gas introduced into the first gas inlet of the reactor is halide gas or halogen gas, the material of the reactor is quartz or corundum. Quartz or corundum is resistant to high temperature and corrosion by halide gas or halogen gas, so that the reactor can be prevented from being damaged by high temperature resistance or corroded by halide gas or halogen gas.

In a possible implementation manner, the gas introduced into the second gas inlet of the reactor is any one or more of hydrogen, argon and nitrogen.

A second aspect of the embodiments of the present application provides a growth device, which at least includes: a growth device and any one of the above-mentioned reactors; wherein, an outlet of the reactor communicates with an inlet of the growth device.

The growth device provided by the embodiments of the present application includes at least a growth device and a reactor, and the outlet of the reactor is communicated with the inlet of the growth device. By setting different air inlets on the reactor body, the first air inlet It is communicated with the first chamber, the second air inlet is communicated with the second chamber, and the first chamber and the second chamber are communicated through a plurality of control flow holes, so that the air enters through the second air inlet. The gas in the second chamber can be sprayed into the first chamber through a plurality of control flow holes to form a dense air curtain layer, which can promote the reaction gas entering the first chamber through the second air inlet to interact with the metal in the first chamber. The source is in full contact, so that the reaction conversion efficiency between the reaction gas and the metal source can be effectively improved. The gas generated in the reactor enters the inlet of the growth device from the gas outlet and further reacts with the substances in the growth device to form crystals. Since the reaction conversion efficiency of the reactor is improved, the crystal quality in the growth device can also be improved to a certain extent. growth rate.

These and other aspects, implementations, and advantages of exemplary embodiments will become apparent from the embodiments described hereinafter, taken in conjunction with the accompanying drawings. However, it should be understood that the description and the accompanying drawings are only used for illustration and do not serve as a definition for the limitation of the embodiments of the present application. For details, please refer to the appended claims. Other aspects and advantages of the embodiments of the present application will be set forth in the following description, and in part will be apparent from the description, or learned by practice of the embodiments of the present application. Furthermore, the various aspects and advantages of the embodiments of the present application may be realized and attained by means of the instrumentalities and combinations particularly pointed out in the appended claims.

Description of drawings

1 is a schematic structural diagram of a reactor provided by an embodiment of the application;

2 is a schematic structural diagram of a reactor provided by an embodiment of the application;

3 is a schematic structural diagram of a reactor provided by an embodiment of the application;

4 is a schematic structural diagram of a reactor provided by an embodiment of the application;

5 is a schematic structural diagram of a reactor provided by an embodiment of the application;

6 is a schematic structural diagram of a reactor provided by an embodiment of the application;

7 is a schematic structural diagram of a reactor provided by an embodiment of the application;

FIG. 8 is a schematic diagram of a working process of a reactor provided by an embodiment of the application.

Description of reference numbers:

100-reactor; 1-reactor body; 10-reaction chamber; 101-first chamber; 102-second chamber; 103-control flow hole; 1031-extension; 104-first baffle plate; 105 - channel; 1051 - first channel; 1052 - second channel; 106 - choke structure; 1061 - choke body; 107 - second gap; 20 - air inlet; 201 - first air inlet; 202 - second 30-air outlet; 40-second baffle plate; 50-first gap; 11-lower bottom wall of the reactor body; 12-the upper bottom wall of the reactor body.

Detailed ways

The terms used in the embodiments of the present application are only used to explain the specific embodiments of the present application, and are not intended to limit the present application. The following will describe the embodiments of the embodiments of the present application in detail with reference to the accompanying drawings.

Group III wide-bandgap nitride semiconductor materials, such as gallium nitride (GaN) and aluminum nitride (AlN), have great application prospects in short-wavelength optoelectronic devices and high-frequency high-power electronic devices, and vapor phase epitaxy is the current epitaxy method. The main methods for the growth of III-nitride semiconductor materials and their device fabrication. Among them, halide vapor phase epitaxy (Hydride Vapor Phase Epitaxy, HVPE) technology has become the mainstream technology for the preparation of GaN single crystal substrates due to its fast growth rate and simple process. In HVPE technology, a halide gas or halogen gas (such as hydrogen chloride or chlorine) reacts with a Group III metal source (such as metal gallium or aluminum) in a reactor to form a metal-containing precursor (such as gallium chloride or aluminum chloride), Then, the surface of the substrate transported by the carrier gas (eg nitrogen or hydrogen) into the growth apparatus reacts with the ammonia gas in the growth apparatus to form a nitride semiconductor material. Among them, in the HVPE system, the contact reaction time between the reaction source gas and the metal source is directly related to the effective utilization rate of the source gas, the growth rate of the GaN single crystal material and the epitaxial quality of the crystal.

In the current horizontal HVPE system structure, taking the Group III metal source as metal gallium as an example, the metal reactor gallium boat is generally a simple semi-cylindrical structure, which includes an air inlet pipe, a cylindrical container and an air outlet pipe, and the air inlet pipe includes an inlet pipe. The gas connecting pipe and the spiral nozzle, and the spiral nozzle is located in the cylindrical container. After the halide gas or halogen gas is introduced into the cylindrical container from the air inlet pipe, it reacts with the surface metal of the metal gallium source in the cylindrical container. , and then the reacted product (eg gallium chloride) and unreacted gas are output from the gas outlet pipe to the cylindrical container. However, the use of this metal reactor gallium boat is prone to the problem that the halide gas or the halogen gas and the metal gallium source steam are not completely reacted and directly enter the reaction chamber, and the reaction conversion rate of the reaction gas and the metal gallium source is low, resulting in a crystal growth rate. It is difficult to improve, and at the same time, the unreacted halide will corrode the crystal material and interfere with the crystal growth, causing a serious negative impact on the crystal quality of the material.

Based on this, an embodiment of the present application provides a reactor. By setting different air inlets on the reactor body, the first air inlet is connected to the first chamber, and the second air inlet is connected to the second chamber. and the first chamber and the second chamber are communicated through a plurality of control flow holes, so that the gas entering the second chamber through the second air inlet can be sprayed into the first chamber through the plurality of control flow holes , forming a dense air curtain layer, which can promote the reaction gas entering the first chamber through the second air inlet to fully contact the metal source in the first chamber, thereby effectively improving the reaction conversion efficiency between the reaction gas and the metal source. To a certain extent, the growth rate of the crystal can be improved, and at the same time, the problem that the unreacted reaction gas can corrode the crystal material, interfere with the crystal growth, and cause a serious negative impact on the crystal quality of the material can be avoided.

The specific structure of the reactor will be described below with reference to the accompanying drawings.

Example 1

Referring to FIG. 1 , an embodiment of the present application provides a reactor 100 . The reactor 100 may at least include: a reactor body 1 , wherein the reactor body 1 has a reaction chamber 10 inside, and the reactor body 1 has a reaction chamber 10 . An air inlet 20 and an air outlet 30 are respectively provided on the two opposite side walls, and both the air inlet 20 and the air outlet 30 communicate with the reaction chamber 10 .

Specifically, the reaction chamber 10 is divided into a first chamber 101 and a second chamber 102, the gas inlet 20 includes a first gas inlet 201 and a second gas inlet 202, and the first gas inlet 201 and the gas outlet 30 are respectively communicated with the first chamber 101, the second air inlet 202 is communicated with the second chamber 102, and there are a plurality of control flow holes 103 between the first chamber 101 and the second chamber 102, so as to The chamber 101 and the second chamber 102 communicate.

In this way, the gas entering the second chamber 102 through the second air inlet 202 can be sprayed into the first chamber 101 through the plurality of control flow holes 103 to form a dense air curtain layer, which is urged to enter the first chamber 101 through the second air inlet 202 The reaction gas in the first chamber 101 can fully contact the metal source in the first chamber 101, which increases the contact probability and contact time between the reaction gas and the metal source, thereby effectively improving the reaction conversion efficiency between the reaction gas and the metal source, and further To a certain extent, the growth rate of the crystal is increased. Moreover, by spraying into the first chamber 101 through a plurality of control flow holes 103, the problem of the conversion rate and supply fluctuation caused by the gradual decrease of the metal source liquid level with the reaction consumption can be solved. The device 100 can still ensure the contact reaction between the reaction gas and the metal source even when the liquid level of the metal source drops, thereby ensuring process stability.

In this embodiment of the present application, as shown in FIG. 1 , the second chamber 102 may be located above the first chamber 101 . In this way, when the gas entering the second chamber 102 from the second air inlet 202 is sprayed into the first chamber 101 through the plurality of control flow holes 103 , a top-to-bottom air curtain can be formed. The gas is injected into the first chamber 101 from top to bottom through the plurality of control flow holes 103, which can have a greater impact on the reaction gas entering the first chamber 101 through the second air inlet 202, thereby making the reaction gas The metal source in the first chamber 101 can be more fully contacted.

A first baffle 104 may be disposed between the first chamber 101 and the second chamber 102 , and the first baffle 104 has a plurality of flow control holes 103 to communicate the first chamber 101 and the second chamber 102 . By arranging the first baffle 104 between the first chamber 101 and the second chamber 102, the reaction chamber 10 can be partitioned into two chambers, and the first baffle 104 can be provided with a plurality of flow control holes 103, the first chamber 101 and the second chamber 102 can be communicated, the process is simple, and the realization is easy.

The specific distribution of the plurality of control flow holes 103 on the first baffle 104 includes but is not limited to the following possible implementations:

A possible implementation is as follows: a plurality of control flow holes 103 are evenly spaced and distributed on the first baffle 104 . In this way, when the gas in the second chamber 102 is sprayed into the first chamber 101 through the plurality of control flow holes 103, the air curtain layer can be formed relatively uniformly, so that the gas pair in the second chamber 102 can pass through the second intake air. The reaction gas entering the first chamber 101 through the port 202 produces a uniform impact.

Another possible implementation is as follows: a plurality of control flow holes 103 are distributed on the first baffle 104 at intervals, from the end of the first baffle 104 close to the air inlet 20 to the end of the first baffle 104 close to the air outlet 30 In the direction of one end, the density of the control flow holes 103 gradually increases. In this way, when the gas in the second chamber 102 is sprayed into the first chamber 101 through the plurality of control flow holes 103 , from the end of the first baffle 104 close to the air inlet 20 to the first baffle 104 close to the air outlet In the direction of one end of 30 , the gas in the second chamber 102 forms a denser and denser gas curtain layer, thereby producing more and more dense impact on the reaction gas entering the first chamber 101 through the second gas inlet 202 .

Another possible implementation is as follows: a plurality of control flow holes 103 are distributed on the first baffle 104 at intervals, from the end of the first baffle 104 close to the air inlet 20 to the end of the first baffle 104 close to the air outlet 30 . In the direction of one end, the density of the control flow holes 103 gradually decreases. In this way, when the gas in the second chamber 102 is sprayed into the first chamber 101 through the plurality of control flow holes 103 , from the end of the first baffle 104 close to the air outlet 30 to the first baffle 104 close to the air inlet In the direction of one end of the chamber 20 , the gas in the second chamber 102 forms a denser and denser gas curtain layer, thereby producing more and more dense impact on the reaction gas entering the first chamber 101 through the second gas inlet 202 .

Of course, in the embodiment of the present application, the specific distribution mode of the plurality of control flow holes 103 on the first baffle 104 can also be flexibly set according to the requirements of airflow control in practical application scenarios, such as gradient distribution. This embodiment of the present application does not limit this, nor is it limited to the above examples.

In the embodiment of the present application, the diameter of the control flow hole 103 may be 50nm-500um. It should be noted here that the numerical values and numerical ranges involved in this application are approximate values, and there may be errors in a certain range due to the influence of the manufacturing process, and those skilled in the art can consider these errors to be ignored.

Further, the diameter of the control flow hole 103 may be 20um-80um. For example, the diameter of the flow control hole 103 may be 30 um, 50 um, or 70 um, etc., which is not limited in the embodiment of the present application, nor is it limited to the above examples. The diameter of the control flow hole 103 is set to be small, so that when the gas entering the second chamber 102 is sprayed into the first chamber 101 through the plurality of control flow holes 103, a relatively dense air curtain layer is formed, so that the reaction gas can be It is possible to make more sufficient contact with the metal source in the first chamber 101 .

In addition, as shown in FIG. 1 , the distance L1 between two adjacent control flow holes 103 in the plurality of control flow holes 103 may be 1-3 mm. For example, the distance L1 between two adjacent flow control holes 103 may be 1.5 mm, 2.0 mm, or 2.5 mm, etc., which is not limited in this embodiment of the present application, nor is it limited to the above examples. Setting the distance between two adjacent control flow holes 103 in the plurality of control flow holes 103 to be smaller can reduce the interval between two adjacent control flow holes 103 , so that the air entering the second chamber 102 can be reduced. When the gas is injected into the first chamber 101 through the plurality of control flow holes 103 , a denser gas curtain layer is formed, so that the reaction gas can more fully contact the metal source in the first chamber 101 .

It should be noted that the shape of the flow control hole 103 may be a circle, a cone, or a square, etc., which is not limited in the embodiments of the present application, nor is it limited to the above examples.

In the embodiment of the present application, the side of each flow control hole 103 facing the first chamber 101 may also be extended with an extension portion 1031 . By forming an extension portion 1031 on the side of each control flow hole 103 facing the first chamber 101 , a spout-type structure can be formed at the position of each control flow hole 103 , through which the gas in the second chamber 102 passes. When the spout-type structure enters the first chamber 101 , it can have a greater impact on the reaction gas in the first chamber 101 , so that the reaction gas can more fully contact the metal source in the first chamber 101 . In addition, the cross-sectional shape of the extension portion 1031 may be the same as that of the flow control hole 103 . That is, when the shape of the control flow hole 103 is circular, the cross-sectional shape of the extension portion 1031 may also be circular.

The extension length of the extension part 1031 may be 1-3 mm. For example, the extension length of the extension portion 1031 may be 1.5 mm, 2.0 mm, or 2.5 mm, etc., which is not limited in this embodiment of the present application, nor is it limited to the above examples.

Referring to FIG. 2 , a second baffle 40 may also be provided between the reaction chamber 10 and the gas outlet 30, wherein one end of the second baffle 40 is connected to the lower bottom wall 11 of the reactor body, and the second baffle A first gap 50 is formed between the other end of 40 and the upper bottom wall 12 of the reactor body. In this way, after the partially reacted reaction gas in the first chamber 101 and the metal source vapor in the first chamber 101 meet the second baffle 40, they are blocked by the second baffle 40 and return to form a vortex, which prolongs the Its residence time inside the reactor body 1 . Part of the incompletely reacted reaction gas in the first chamber 101 can contact and react more fully with the metal source vapor in the first chamber 101 , and the reacted gas flows out of the reaction chamber 10 through the first gap 50 .

In addition, by setting the second baffle 40 and combining with regulating and controlling the partial pressure and flow rate of the control gas (the gas entering the second gas inlet 202 ), the flow of the reaction gas (the gas entering the first gas inlet 201 ) can be effectively changed The direction and flow field effectively prevent the unreacted reaction gas and metal source steam from mixing into the reaction precursor (that is, the gas generated by the reaction between the reaction gas and the metal source steam), which greatly reduces the conversion efficiency of the reaction gas into the metal precursor. Thus, the stability of the conversion efficiency of the metal precursor can be achieved, and it is favorable for large-scale production.

In a possible implementation manner, as shown in FIG. 3 , the reaction chamber 10 may further have at least one channel 105 , wherein the inlet of the channel 105 is communicated with the first chamber 101 , and the outlet of the channel 105 is connected with the gas outlet 30 connected. In this way, the flow paths in the reaction chamber 10 can be increased, and the chance of contact between the reaction gas and the metal source vapor can be further increased. Part of the incompletely reacted reactive gas in the first chamber 101 and the metal source vapor in the first chamber 101 can further react in the channel 105, thereby effectively improving the reaction conversion efficiency between the reactive gas and the metal source, to a certain extent Improve crystal growth rate, growth quality and product yield.

Referring to FIG. 4 , the reaction chamber 10 may have two channels 105 therein. The inlet of the first channel 1051 of the two channels 105 is communicated with the first chamber 101 , the outlet of the first channel 1051 is communicated with the inlet of the second channel 1052 of the two channels 105 , and the outlet of the second channel 1052 It communicates with the gas outlet 30 , and the inlet of the first channel 1051 and the outlet of the second channel 1052 are located on the same side of the reactor body 1 . By having two channels 105 in the reaction chamber 10 , the flow path in the reaction chamber 10 can be further increased, and since the inlet of the first channel 1051 and the outlet of the second channel 1052 are located on the same side of the reactor body 1 , the flow path in the reaction chamber 10 can be further increased. The space occupied by the first channel 1051 and the second channel 1052 in the reaction chamber 10 is saved to a certain extent.

In the embodiment of the present application, as shown in FIG. 5 , at least one channel 105 may further be provided with a flow blocking structure 106, wherein the channel 105 has a first side wall, a second side wall, an upper bottom wall and a lower bottom wall, The flow blocking structure 106 is fixedly connected to any one, any two or any three of the first side wall, the second side wall, the upper bottom wall and the lower bottom wall. A second gap 107 is formed between at least one of the side wall, the upper bottom wall and the lower bottom wall. By disposing the flow blocking structure 106 in at least one channel 105, a certain obstacle can be formed to the flow of the gas, the contact time between the reaction gas and the metal source can be increased again, and the conversion efficiency of the metal precursor and the crystal epitaxial growth quality can be improved.

Specifically, after the partially reacted reactive gas in the first chamber 101 and the metal source vapor in the first chamber 101 enter the channel 105 , they are blocked by the blocking structure 106 to form a vortex, which can prevent the gas from flowing in the channel 105 . The rapid flow can effectively prevent the escape of the incompletely reacted reaction gas and the metal source steam, so that some of the incompletely reacted reaction gas and the metal source steam in the first chamber 101 can fully react again, and the fully reacted gas passes through the first chamber 101. The second gap 107 flows out of the reaction chamber 10, thereby ensuring the conversion rate and the crystal growth rate.

It can be understood that, in the embodiment of the present application, the flow blocking structure 106 may be provided only in the first channel 1051 , the flow blocking structure 106 may be provided only in the second channel 1052 , or the flow blocking structure 106 may be provided only in the second channel 1052 . Both the first channel 1051 and the second channel 1052 are provided with a flow blocking structure 106 . Exemplarily, as shown in FIG. 6 , both the first channel 1051 and the second channel 1052 are provided with a flow blocking structure 106 to achieve a better flow blocking effect.

In addition, it should be noted that the flow blocking structure 106 may also be disposed at other positions in the reaction chamber 10 except for the channel 105 (the first channel 1051 and the second channel 1052 ), so as to have a flow blocking effect.

Continuing to refer to FIG. 5 or FIG. 6 , the bluff structure 106 may include: at least one bluff body 1061 , wherein the bluff body 1061 may be fixedly connected with one of the upper bottom wall and the lower bottom wall of the channel 105 , and the bluff body 1061 The second gap 107 may be formed between 1061 and the other of the upper bottom wall and the lower bottom wall of the channel 105 . In this way, after the partially unreacted reactant gas in the first chamber 101 and the metal source vapor in the first chamber 101 enter the channel 105, due to the bluff body 1061 and the upper bottom wall and the lower bottom wall of the channel 105. One is fixedly connected, and part of the incompletely reacted reactant gas and the metal source vapor are blocked to form a vortex, which can effectively prevent the incompletely reacted reactant gas and the metal source vapor from escaping, so that some incompletely reacted reactions in the first chamber 101 are prevented. The gas and the metal source steam can react more fully, and then the gas generated after the sufficient reaction flows out of the reaction chamber through the second gap 107 formed between the bluff body 1061 and the other one of the upper bottom wall and the lower bottom wall of the channel 105 10, so as to ensure the conversion rate and crystal growth rate.

As an optional implementation manner, the number of the bluff bodies 1061 may be multiple, and the multiple bluff bodies 1061 are distributed at intervals along the extending direction of the channel 105 . By increasing the number of the bluff body 1061 in the channel 105, it can further block the incompletely reacted reactant gas and the metal source vapor, and thus can more effectively prevent the incompletely reacted reactant gas and the metal source vapor from escaping, so that the first The incompletely reacted reactant gas in a chamber 101 can further react sufficiently with the metal source vapor.

It can be understood that, in the embodiments of the present application, the specific structure of the bluff body 1061 includes but is not limited to the following possible implementations:

A possible implementation manner is: the bluff body 1061 is a columnar structure. For example, the bluff body 1061 may have a cylindrical structure (as shown in FIG. 5 ) or a prismatic structure (as shown in FIG. 7 ), which is not limited in this embodiment of the present application, nor is it limited to the above examples.

Another possible implementation is: the bluff body 1061 is a cone-shaped structure. For example, the bluff body 1061 may have a conical structure.

Another possible implementation manner is: the bluff body 1061 is a helical structure. By arranging the fluid in a helical structure, the contact area between the outer surface of the bluff body 1061 and the gas can be increased, so that the bluff body 1061 can play a better blocking effect on the gas.

Certainly, in some other possible implementation manners, the bluff body 1061 may also be a labyrinth-like rotating structure, and the embodiment of the present application does not limit the specific arrangement of the labyrinth-like rotating structure, nor is it limited to the above examples. Moreover, the embodiments of the present application do not limit the appearance and shape of the reactor 100. Specifically, the reactor 100 can be designed into a desired shape according to the connection between the reactor 100 and the external growth equipment or the spatial arrangement. For example, the reactor 100 can be a cylinder. body, cube or cuboid, etc. In addition, the volume of the reactor 100, the space of each chamber and the volume ratio thereof can also be flexibly set according to actual process requirements, which are not limited in the embodiments of the present application.

In addition, as an optional implementation manner, the axial direction of the bluff body 1061 may be perpendicular to the extending direction of the channel 105 . In this way, the blocking effect of the bluff body 1061 on the gas in the channel 105 can be further increased. Of course, in some other embodiments, the axial direction of the bluff body 1061 may also be parallel to the extension direction of the channel 105 , or the included angle formed between the axial direction of the bluff body 1061 and the extension direction of the channel 105 may be Less than 90 degrees, that is, the axial direction of the bluff body 1061 may be inclined with respect to the extending direction of the channel 105 .

In addition, in the embodiment of the present application, the metal source injection operation is simple, which is beneficial to reduce maintenance costs to a certain extent. That is, the metal source can be injected through the reaction gas inlet (ie, the first gas inlet 201 ), which has the advantages of high efficiency and convenience compared to the operation of taking out the quartz boat and injecting again or using pipeline injection in the prior art.

Embodiment 2

On the basis of the above-mentioned first embodiment, the embodiment of the present application provides a reactor 100, and the reactor 100 may be a group III metal source reactor. The metal source within the metal source reactor may be a Group III metal.

In the embodiment of the present application, the gas introduced into the first gas inlet 201 of the Group III metal source reactor may be a halide gas or a halogen gas. Wherein, the halide gas can be any one or more of hydrogen chloride (HCl), hydrogen bromide (HBr) or hydrogen iodide (HI), and the halogen gas can be chlorine (Cl ₂ ), bromine (Br ₂ ) or any one or more of iodine gas (I ₂ ). The gas introduced into the second gas inlet 202 of the Group III metal source reactor can be any one or more of hydrogen, argon and nitrogen, for example, the gas introduced into the second gas inlet 202 can be hydrogen Argon gas mixture.

It should be noted that, when the gas introduced into the first air inlet 201 of the reactor 100 is halide gas or halogen gas, the material of the reactor 100 may be quartz or corundum. The embodiment of the present application does not limit the material of the reactor 100, as long as it can resist high temperature and corrosion of halide gas or halogen gas, that is, it can prevent the reactor 100 from being damaged by high temperature resistance or being damaged by halide gas Or halogen gas corrosion can be.

Wherein, in a possible implementation manner, the quartz may be high-purity quartz.

In addition, the Group III metal source reactor may specifically be a gallium source reactor, and the reaction chamber 10 of the reactor body 1 of the gallium source reactor has liquid gallium in it. During the working process of the gallium source reactor, as shown in FIG. 8 , halide gas (HCl, HBr or HI) or halogen gas (Cl ₂ , Br ₂ or I ₂ ) enters the first chamber from the first gas inlet 201 The chamber 101 reacts with the liquid gallium in the first chamber 101 to generate a gallium halide gas (eg, gallium chloride, gallium bromide or gallium iodide). Hydrogen, argon or nitrogen gas enters the first chamber 102 from the second air inlet 202, and after the second chamber 102 is sufficiently gathered, the hydrogen, argon or nitrogen gas is injected into the first chamber 101 through the control flow hole 103, A dense gas curtain layer is formed above the first chamber 101 (that is, above the liquid level of the metal source in the first chamber 101 ), so that the halide gas or the halogen gas can be fully contacted with the liquid gallium in the first chamber 101 , Therefore, the conversion efficiency of the reaction between the halide gas or the halogen gas and the liquid gallium can be effectively improved.

In addition, the halide gas or halogen gas flows from the side close to the first gas inlet 201 in the first chamber 101 to the side away from the first gas inlet 201. During this process, some of the incompletely reacted After encountering the second baffle 40, the halide gas or the halogen gas and the metal gallium vapor in the first chamber 101 are blocked by the second baffle 40 and return to form a vortex, so that the first chamber 101 partially reacts incompletely The halide gas or halogen gas can be more fully contacted and reacted with the metal gallium vapor, and the gas generated by the reaction flows out through the first gap 50 .

After the reaction, the gallium halide gas, the remaining incompletely reacted halide gas or the halogen gas and the metal gallium vapor in the first chamber 101 enter the first channel 1051 and the second channel 1052 from the first chamber 101 in turn, and are The bluff body 1061 blocks the formation of eddy currents, which can effectively prevent the escape of incompletely reacted halide gas or halogen gas and metal gallium vapor, so that part of the incompletely reacted halide gas or halogen gas and metal gallium vapor in the first chamber 101 can be More fully reacted, and then the fully reacted gas flows out of the channel 105 through the second gap 107, and then flows out of the gallium source reactor through the gas outlet 30, thereby ensuring the reaction conversion rate of the halide gas or the halogen gas and liquid gallium.

In addition, it should be noted that in some other embodiments, the reactor 100 includes, but is not limited to, a group III metal source reactor, that is, the reactor 100 can also be a group I metal source reactor or a group II metal source reactor . This embodiment of the present application does not limit this, nor is it limited to the above examples.

Embodiment 3

An embodiment of the present application provides a growth apparatus, and the growth apparatus includes at least a growth device and the reactor 100 in the above-mentioned first or second embodiment. Wherein, the outlet of the reactor 100 is communicated with the inlet of the growth equipment.

It should be noted that, in the embodiments of the present application, the outlet of the reactor 100 may be communicated with the gas outlet 30 of the reactor 100 , or the gas outlet 30 of the reactor 100 may be used as the outlet of the reactor 100 .

The gas outlet ₃₀ of the reactor 100 is used as the outlet of the reactor 100, and the reactor 100 is a gallium source reactor as an example. After the gallium halide gas (eg, gallium chloride, gallium bromide or gallium iodide) flowing out of the gas outlet 30 of the device 100 enters the growth device from the inlet of the growth device, it reacts with NH ₃ in the growth device, and the surface of the substrate reacts with NH 3 . A nitride semiconductor material (eg, a GaN single crystal material) is formed.

The growth device provided in the embodiment of the present application includes at least a growth device and a reactor 100. The outlet of the reactor 100 is communicated with the inlet of the growth device. By setting different air inlets 20 on the reactor body 1, The first air inlet 201 communicates with the first chamber 101, the second air inlet 202 communicates with the second chamber 102, and a plurality of control flow holes pass between the first chamber 101 and the second chamber 102 103 is connected, so that the gas entering the second chamber 102 through the second air inlet 202 can be sprayed into the first chamber 101 through the plurality of control flow holes 103 to form a dense air curtain layer, which can promote the passage of the second air inlet The reaction gas entering the first chamber 101 through the port 202 can fully contact the metal source in the first chamber 101, thereby effectively improving the reaction conversion efficiency between the reaction gas and the metal source. The gas generated in the reactor 100 enters the inlet of the growth device from the gas outlet 30 and further reacts with the substances in the growth device to form crystals. Since the reaction conversion efficiency of the reactor 100 is improved, it can also be avoided that the reaction gas does not remain in the reactor. The problem of completely reacting and then entering the growth device can also improve the growth rate of the crystal in the growth device and the quality stability and consistency of the crystal to a certain extent, and realize the large-scale production of epitaxial single crystal materials.

It can be understood that increasing the growth rate of the crystal in the growth device can reduce the process cost of growing the crystal. By increasing the conversion rate of the reaction gas (halide gas or halogen gas) into a gallium halide gas (such as gallium chloride, gallium bromide or gallium iodide), it is possible to increase the crystal growth rate, thereby reducing the growth time and reducing the lining. Bottom preparation cost.

The quality stability and consistency of crystals in the growth device can be improved by preventing the reaction gas from not completely reacting in the reactor and then entering the growth device. By preventing the reaction gas and the metal source vapor from being mixed into the growth device with the gallium halide gas, parasitic reactions and polycrystalline growth in the growth device can be suppressed, and the unreacted reaction gas entering the growth device will corrode the crystal material and interfere with the crystal growth. The crystal quality of the material poses a problem of serious negative effects, so that the quality stability and consistency of the crystals within the growth apparatus can be improved.

In the description of the embodiments of the present application, it should be noted that, unless otherwise expressly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense, for example, it may be a fixed connection or a The indirect connection through an intermediate medium may be the internal communication of the two elements or the interaction relationship between the two elements. Those of ordinary skill in the art can understand the specific meanings of the above terms in the embodiments of the present application according to specific situations.

The devices or elements referred to in the embodiments of the present application or implied must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be construed as a limitation on the embodiments of the present application. In the description of the embodiments of the present application, "plurality" means two or more, unless otherwise precisely and specifically specified.

The terms "first", "second", "third", "fourth", etc. (if any) in the description and claims of the embodiments of the present application and the above-mentioned drawings are used to distinguish similar objects, while It is not necessary to describe a particular order or sequence. It is to be understood that data so used may be interchanged under appropriate circumstances such that embodiments of the embodiments of the application described herein can be implemented, for example, in sequences other than those illustrated or described herein. Furthermore, the terms "comprising" and "having" and any variations thereof, are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those expressly listed Rather, those steps or units may include other steps or units not expressly listed or inherent to these processes, methods, products or devices.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the embodiments of the present application, but not to limit them; It should be understood that: it is still possible to modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements to some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the embodiments of the present application The scope of the technical solutions of each embodiment.

Claims

A kind of reactor is characterized in that, at least comprises:

Reactor body;

The inside of the reactor body has a reaction chamber, and the two opposite side walls of the reactor body are respectively provided with an air inlet and an air outlet, and the air inlet and the air outlet are both connected with the The reaction chamber is connected;

The reaction chamber is divided into a first chamber and a second chamber, the air inlet includes a first air inlet and a second air inlet, the first air inlet and the air outlet are respectively connected with the the first chamber is in communication, and the second air inlet is in communication with the second chamber;

And there are a plurality of control flow holes between the first chamber and the second chamber, so as to communicate the first chamber and the second chamber.
The reactor of claim 1, wherein the second chamber is located above the first chamber.
The reactor according to claim 1 or 2, wherein a first baffle is arranged between the first chamber and the second chamber, and the first baffle has a plurality of the A control flow hole is provided to communicate the first chamber and the second chamber.
The reactor according to claim 3, wherein a plurality of the control flow holes are evenly distributed on the first baffle plate;

Alternatively, a plurality of the control flow holes are distributed on the first baffle at intervals, from an end of the first baffle close to the air inlet to an end of the first baffle close to the air outlet In the direction of , the density of the control flow holes gradually increases;

Alternatively, a plurality of the control flow holes are distributed on the first baffle at intervals, from an end of the first baffle close to the air inlet to an end of the first baffle close to the air outlet In the direction of , the density of the control flow holes gradually decreases.
The reactor according to claim 3 or 4, wherein the diameter of the control flow hole is 50nm-500um.
The reactor according to claim 5, wherein the diameter of the control flow hole is 20um-80um.
The reactor according to any one of claims 3-6, wherein the distance between two adjacent control flow holes in the plurality of control flow holes is 1-3 mm.
The reactor according to any one of claims 3-7, characterized in that, each of the flow control holes is formed with an extension portion extending from a side facing the first chamber.
The reactor according to claim 8, wherein the extension length of the extension portion is 1-3 mm.
The reactor according to any one of claims 1-9, wherein a second baffle is arranged between the reaction chamber and the gas outlet;

One end of the second baffle is connected to the lower bottom wall of the reactor body, and a first gap is formed between the other end of the second baffle and the upper bottom wall of the reactor body.
The reactor according to any one of claims 1-10, wherein the reaction chamber further has at least one channel, the inlet of the channel is communicated with the first chamber, and the outlet of the channel is connected to the first chamber. The air outlets are communicated.
The reactor of claim 11, wherein the reaction chamber has two of the channels;

The inlet of the first channel of the two channels is communicated with the first chamber, the outlet of the first channel is communicated with the inlet of the second channel of the two channels, and the outlet of the second channel is communicated with the inlet of the second channel. the outlet communicates with the air outlet;

And the inlet of the first channel and the outlet of the second channel are located on the same side of the reactor body.
The reactor according to claim 11 or 12, wherein at least one of the passages is provided with a blocking structure; the passage has a first side wall, a second side wall, an upper bottom wall and a lower bottom wall;

The flow blocking structure is fixedly connected to any one, any two or any three of the first side wall, the second side wall, the upper bottom wall and the lower bottom wall, and the blocking structure is A second gap is formed between the flow structure and at least one of the first side wall, the second side wall, the upper bottom wall, and the lower bottom wall.
The reactor according to claim 13, wherein the bluff structure comprises: at least one bluff body;

The bluff body is fixedly connected with one of the upper bottom wall and the lower bottom wall of the channel, and the bluff body is connected with the other one of the upper bottom wall and the lower bottom wall of the channel The second gap is formed therebetween.
The reactor according to claim 14, wherein the number of the bluff bodies is plural; and the plurality of the bluff bodies are distributed at intervals along the extending direction of the channel.
The reactor according to claim 14 or 15, wherein the bluff body is a columnar structure.
The reactor according to claim 14 or 15, wherein the bluff body is a helical structure.
The reactor according to any one of claims 14-17, wherein the axial direction of the bluff body is perpendicular to the extending direction of the channel.
The reactor according to any one of claims 1-18, wherein the reactor is a Group III metal source reactor.
The reactor of claim 19, wherein the reactor is a gallium source reactor.
The reactor of claim 20, wherein the reaction chamber of the reactor body contains liquid gallium.
The reactor according to any one of claims 19-21, wherein the gas introduced into the first gas inlet of the reactor is a halide gas or a halogen gas.
The reactor according to claim 22, wherein when the gas introduced into the first gas inlet of the reactor is halide gas or halogen gas, the material of the reactor is quartz or corundum .
The reactor according to any one of claims 19-23, wherein the gas introduced into the second gas inlet of the reactor is any one or more of hydrogen, argon and nitrogen.
A growth device, characterized in that it at least comprises: a growth device and the reactor according to any one of the above claims 1-24; wherein the outlet of the reactor communicates with the inlet of the growth device.