CN117062945A

CN117062945A - Reactor and growth device

Info

Publication number: CN117062945A
Application number: CN202080108140.4A
Authority: CN
Inventors: 刘南柳; 张浩东; 申健
Original assignee: Huawei Technologies Co Ltd; Dongguan Institute of Opto Electronics Peking University
Current assignee: Huawei Technologies Co Ltd; Dongguan Institute of Opto Electronics Peking University
Priority date: 2020-12-24
Filing date: 2020-12-24
Publication date: 2023-11-14
Also published as: WO2022133943A1

Abstract

The embodiment of the application provides a reactor and a growth device, wherein a reaction chamber is arranged in the reactor body, an air inlet and an air outlet are respectively arranged on two opposite side walls on the reactor body, the air inlet and the air outlet are communicated with the reaction chamber, the reaction chamber is divided into a first chamber and a second chamber, the air inlet comprises a first air inlet and a second air inlet, the first air inlet and the air outlet are respectively communicated with the first chamber, the second air inlet is communicated with the second chamber, a plurality of flow control holes for communicating the first chamber with the second chamber are arranged between the first chamber and the second chamber, and the reaction conversion rate of reaction gas and a metal source can be improved, so that the growth rate of crystals can be improved.

Description

Reactor and growth device

Technical Field

The embodiment of the application relates to the technical field of semiconductors, in particular to a reactor and a growth device.

Background

In the development of semiconductor science and technology, vapor phase epitaxy plays an important role. Vapor phase epitaxy is a single crystal thin layer growth method, which is to deposit a semiconductor material on a single crystal wafer in a vapor phase state, so that it grows a single crystal layer with a desirable thickness and resistivity along the crystal axis direction of the single crystal wafer. Typically, prior to vapor phase epitaxial growth of a single crystal layer, for example, prior to vapor phase epitaxial growth of a group iii wide band gap nitride semiconductor material, a halide gas or halogen gas is reacted with a group iii metal source in a reactor to form a metal-containing precursor, which is then transported to the substrate surface by a carrier gas (e.g., nitrogen or hydrogen) and reacted with ammonia to form the nitride semiconductor material.

In the prior art, when a halide gas or a halogen gas is reacted with a group iii metal source in a reactor to generate a metal-containing precursor, the reactor is generally a cylindrical reactor, the cylindrical reactor comprises an air inlet pipe, a cylindrical container and an air outlet pipe, the air inlet pipe comprises an air inlet connecting pipe and a spiral spray pipe, the spiral spray pipe is positioned in the cylindrical container, the reaction gas (such as the halide gas or the halogen gas) is introduced into the cylindrical container from the air inlet pipe and then reacts with the metal on the surface layer of the metal source in the cylindrical container, and then the resultant (the metal-containing precursor) after the reaction and the unreacted gas are output from the cylindrical container through the air outlet pipe.

However, with the above-described reactor, the reaction conversion rate of the reaction gas with the metal source is low, resulting in a low crystal growth rate.

Disclosure of Invention

The embodiment of the application provides a reactor and a growth device, which can improve the reaction conversion rate of reaction gas and a metal source, thereby improving the growth rate of crystals.

According to a first aspect of the present application, there is provided a reactor comprising at least: a reactor body; the reactor comprises a reactor body, a reaction chamber, a gas inlet and a gas outlet, wherein the reactor body is internally provided with the reaction chamber, and the two opposite side walls of the reactor body are respectively provided with the gas inlet and the gas outlet which are communicated with the reaction chamber; the reaction chamber is divided into a first chamber and a second chamber, the air inlet comprises a first air inlet and a second air inlet, the first air inlet and the air outlet are respectively communicated with the first chamber, and the second air inlet is communicated with the second chamber; and a plurality of flow control holes are arranged between the first chamber and the second chamber so as to communicate the first chamber with the second chamber.

According to the reactor provided by the embodiment of the application, the different air inlets are arranged on the reactor body, the first air inlet is communicated with the first cavity, the second air inlet is communicated with the second cavity, and the first cavity and the second cavity are communicated through the plurality of flow control holes, so that gas entering the second cavity through the second air inlet can flow into the first cavity through the plurality of flow control holes Kong Penru to form a compact gas curtain layer, and the reaction gas entering the first cavity through the second air inlet can be caused to fully contact with a metal source in the first cavity, so that the reaction conversion efficiency of the reaction gas and the metal source can be effectively improved, and the growth rate of crystals can be improved to a certain extent.

In one possible implementation, the second chamber is located above the first chamber. In this way, when the gas entering the second chamber from the second gas inlet passes through the plurality of flow control holes Kong Penru and flows into the first chamber, a gas curtain layer from top to bottom can be formed, the gas in the second chamber is sprayed into the first chamber from top to bottom through the plurality of flow control holes, and a larger impact can be generated on the reaction gas entering the first chamber through the second gas inlet, so that the reaction gas can be fully contacted with the metal source in the first chamber.

In one possible implementation manner, a first baffle is disposed between the first chamber and the second chamber, and a plurality of flow control holes are formed in the first baffle so as to communicate the first chamber with the second chamber. Through set up first baffle between first cavity and second cavity, can separate the reaction chamber and put into two cavities, through having a plurality of on first baffle accuse flow hole, can communicate first cavity and second cavity, simple process easily realizes.

In one possible implementation manner, a plurality of the flow control holes are uniformly and alternately distributed on the first baffle plate; or, the plurality of flow control holes are distributed on the first baffle at intervals, and the density of the flow control holes is gradually increased from one end of the first baffle close to the air inlet to one end of the first baffle close to the air outlet; or, the plurality of flow control holes are distributed on the first baffle at intervals, and the density of the flow control holes is gradually reduced from one end of the first baffle, which is close to the air inlet, to one end of the first baffle, which is close to the air outlet.

In this way, a gas curtain can be relatively uniformly formed when the gas in the second chamber passes through the plurality of flow control Kong Penru in the first chamber, thereby causing the gas in the second chamber to uniformly impinge on the reactant gas entering the first chamber through the second inlet. Alternatively, when the gas in the second chamber passes through the plurality of flow control Kong Penru and flows through the first chamber, the gas in the second chamber forms a denser gas curtain layer in a direction from one end of the first baffle close to the gas inlet to one end of the first baffle close to the gas outlet, thereby generating denser and denser impact on the reaction gas entering the first chamber through the second gas inlet. Alternatively, when the gas in the second chamber passes through the plurality of flow control Kong Penru and flows through the first chamber, the gas in the second chamber forms a denser gas curtain layer in a direction from one end of the first baffle close to the gas outlet to one end of the first baffle close to the gas inlet, thereby generating denser and denser impact on the reaction gas entering the first chamber through the second gas inlet. Or, the specific distribution mode of the plurality of flow control holes on the first baffle plate can be flexibly set according to the requirements of practical application scenes.

In one possible implementation, the diameter of the flow control holes is 50nm-500um.

In one possible implementation, the diameter of the flow control hole is 20um-80um. The diameter of the flow control hole is smaller, so that when gas entering the second chamber passes through the first chambers of the flow control Kong Penru, a relatively compact gas curtain layer is formed, and the reaction gas can be in contact with the metal source in the first chambers more fully.

In one possible implementation, a distance between two adjacent flow control holes in the plurality of flow control holes is 1-3mm. The distance between two adjacent control flow holes in the plurality of control flow holes is set to be smaller, the interval between the two adjacent control flow holes can be reduced, and when gas entering the second chamber passes through the first chamber of the plurality of control flow Kong Penru, a more compact gas curtain layer is formed, so that the reaction gas can be in contact with a metal source in the first chamber more fully.

In one possible implementation, each of the flow control holes is formed with an extension extending toward one side of the first chamber. Through the extension that is formed with the extension in the one side of every accuse circulation hole towards first cavity, can form spout formula structure in the position department of every accuse circulation hole, when the gas in the second cavity gets into first cavity through this spout formula structure, can produce bigger impact to the reaction gas in the first cavity to make the reaction gas more fully contact with the metal source in the first cavity.

In one possible implementation, the cross-sectional shape of the extension is the same as the shape of the flow control hole.

In one possible implementation, the extension has an extension length of 1-3mm.

In one possible implementation, a second baffle is disposed between the reaction chamber and the gas outlet; one end of the second baffle is connected with the lower bottom wall of the reactor body, and a first gap is formed between the other end of the second baffle and the upper bottom wall of the reactor body.

Through being provided with the second baffle between reaction chamber and gas outlet, the one end of second baffle links to each other with the lower diapire of reactor body, forms first clearance between the last diapire of second baffle, and the reaction gas of partial incomplete reaction in the first cavity and the metal source steam in the first cavity are after meetting the second baffle, are blockked the return by the second baffle and form the vortex, and like this, the reaction gas of partial incomplete reaction in the first cavity and the metal source steam in the first cavity can more fully contact the reaction, and the gaseous rethread first clearance after the reaction flows out reaction chamber.

In a possible implementation manner, the reaction chamber further has at least one channel therein, an inlet of the channel is communicated with the first chamber, and an outlet of the channel is communicated with the air outlet.

Through having at least one passageway in the reaction chamber, the entry of passageway is linked together with first cavity, and the export of passageway is linked together with the gas outlet, can increase the circulation route in the reaction chamber, like this, the partial incomplete reaction's of first cavity reacting gas and the metal source steam in the first cavity can further take place the reaction in the passageway to effectively improve the reaction conversion efficiency of reacting gas and metal source, improve the growth rate of crystal to a certain extent.

In one possible implementation, there are two said channels within the reaction chamber; an inlet of a first channel of the two channels is communicated with the first chamber, an outlet of the first channel is communicated with an inlet of a second channel of the two channels, and an outlet of the second channel is communicated with the air outlet; and the inlet of the first channel and the outlet of the second channel are positioned on the same side of the reactor body.

Through having two passageways in the reaction chamber, the entry and the first cavity intercommunication of first passageway, the export of first passageway is linked together with the entry of second passageway, the export and the gas outlet intercommunication of second passageway, and the entry of first passageway is located the same side of reactor body with the export of second passageway, can further increase the circulation route in the reaction chamber, and can save the occupation space of first passageway and second passageway in the reaction chamber.

In one possible implementation, a choke structure is disposed in at least one of the channels; the channel has a first side wall, a second side wall, an upper bottom wall, and a lower bottom wall; the choke structure is fixedly connected with any one, any two or any three of the first side wall, the second side wall, the upper bottom wall and the lower bottom wall, and a second gap is formed between the choke structure and at least one of the first side wall, the second side wall, the upper bottom wall and the lower bottom wall.

Through being provided with the choked flow structure in at least one passageway, the reaction gas of partial incomplete reaction in the first cavity and the metal source steam in the first cavity are after getting into the passageway, are blocked by the choked flow structure and form the vortex, can effectively prevent the escape of incomplete reaction's reaction gas and metal source steam for the reaction gas of partial incomplete reaction in the first cavity and metal source steam can more fully react, and the gas that the abundant reaction after-produced flows out the reaction chamber through the second clearance again, thereby ensure conversion rate and crystal growth speed.

In one possible implementation, the choke structure includes: at least one fluid barrier; the flow blocking body is fixedly connected with one of the upper bottom wall and the lower bottom wall of the channel, and the second gap is formed between the flow blocking body and the other of the upper bottom wall and the lower bottom wall of the channel.

By arranging one or more baffle bodies in at least one channel, the baffle bodies are fixedly connected with one of the upper bottom wall and the lower bottom wall of the channel, and a second gap is formed between the baffle bodies and the other of the upper bottom wall and the lower bottom wall of the channel, so that after the partially incompletely reacted reaction gas in the first chamber and the metal source steam in the first chamber enter the channel, the partially incompletely reacted reaction gas and the metal source steam are blocked to form vortex flow due to the fact that the baffle bodies are fixedly connected with one of the upper bottom wall and the lower bottom wall of the channel, escape of the incompletely reacted reaction gas and the metal source steam can be effectively prevented, the partially incompletely reacted reaction gas and the metal source steam in the first chamber can be fully reacted, and then the gas generated after the full reaction flows out of the reaction chamber through the second gap formed between the baffle bodies and the other of the upper bottom wall and the lower bottom wall of the channel, and the conversion rate and the crystal growth speed are ensured.

In one possible implementation, the number of flow blocking bodies is a plurality; the plurality of flow blocking bodies are distributed at intervals along the extending direction of the channel. The quantity of the fluid in the channel is increased to further block the incompletely reacted reaction gas and the metal source steam, so that the incompletely reacted reaction gas and the metal source steam can be more effectively prevented from escaping, and the incompletely reacted reaction gas and the metal source steam in the first chamber can be further and fully reacted.

In one possible implementation, the blocking body is a columnar structure.

In one possible implementation, the blocking body is a spiral structure. By arranging the fluid in a spiral structure, the contact area between the outer surface of the choke body and the gas can be increased, and thus, the choke body can play a better role in blocking the gas.

In one possible embodiment, the axial direction of the blocking body is perpendicular to the direction of extension of the channel. In this way, the blocking effect of the blocking body on the gas in the passage can be further increased.

In one possible implementation, the reactor is a group III metal source reactor.

In one possible implementation, the reactor is a gallium-source reactor.

In one possible implementation, the reaction chamber of the reactor body has liquid gallium therein.

In one possible implementation, the gas introduced into the first gas inlet of the reactor is a halide gas or a halogen gas.

In one possible implementation manner, when the gas introduced into the first gas inlet of the reactor is halide gas or halogen gas, the material of the reactor is quartz or corundum. Quartz or corundum is resistant to high temperatures and to corrosion by halide gases or halogen gases, so that the reactor is prevented from being destroyed without being resistant to high temperatures or from being corroded by halide gases or halogen gases.

In one possible implementation manner, the gas introduced into the second gas inlet of the reactor is any one or more of hydrogen, argon and nitrogen.

A second aspect of an embodiment of the present application provides a growth apparatus, including at least: a growth apparatus and a reactor as described in any one of the above; wherein the outlet of the reactor is in communication with the inlet of the growth apparatus.

The growth device at least comprises growth equipment and a reactor, wherein an outlet of the reactor is communicated with an inlet of the growth equipment, different air inlets are arranged on a reactor body, a first air inlet is communicated with a first cavity, a second air inlet is communicated with a second cavity, and the first cavity and the second cavity are communicated through a plurality of flow control holes, so that gas entering the second cavity through the second air inlet can flow into the first cavity through a plurality of flow control Kong Penru to form a compact gas curtain layer, and the reaction gas entering the first cavity through the second air inlet can be fully contacted with a metal source in the first cavity, so that the reaction conversion efficiency of the reaction gas and the metal source can be effectively improved. The gas generated in the reactor enters the inlet of the growth device from the gas outlet and further reacts with substances in the growth device to generate crystals, and the reaction conversion efficiency of the reactor is improved, so that the growth rate of the crystals in the growth device can be improved to a certain extent.

These and other aspects, implementations, and advantages of the exemplary embodiments will become apparent from the following description of the embodiments, taken in conjunction with the accompanying drawings. It is to be understood that the specification and drawings are solely for purposes of illustration and not as a definition of the limits of the embodiments of the application, for which reference should be made to the appended claims. Additional aspects and advantages of embodiments of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of embodiments of the application. Furthermore, the aspects and advantages of the embodiments of the application may be realized and attained by means of the instrumentalities and combinations particularly pointed out in the appended claims.

Drawings

FIG. 1 is a schematic view of a reactor according to an embodiment of the present application;

FIG. 2 is a schematic view of a reactor according to an embodiment of the present application;

FIG. 3 is a schematic view of a reactor according to an embodiment of the present application;

FIG. 4 is a schematic view of a reactor according to an embodiment of the present application;

FIG. 5 is a schematic view of a reactor according to an embodiment of the present application;

FIG. 6 is a schematic view of a reactor according to an embodiment of the present application;

FIG. 7 is a schematic view of a reactor according to an embodiment of the present application;

FIG. 8 is a schematic view of the operation of a reactor according to an embodiment of the present application.

Reference numerals illustrate:

a 100-reactor; 1-a reactor body; 10-a reaction chamber; 101-a first chamber; 102-a second chamber; 103-a flow control hole; 1031-an extension; 104-a first baffle; 105-channel; 1051-first channel; 1052-second channel; 106-a choke structure; 1061-blocking fluid; 107-second gap; 20-air inlet; 201-a first air inlet; 202-a second air inlet; 30-an air outlet; 40-a second baffle; 50-a first gap; 11-a lower bottom wall of the reactor body; 12-an upper bottom wall of the reactor body.

Detailed Description

The terminology used in the description of the embodiments of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application, as will be described in detail with reference to the accompanying drawings.

Group iii wide bandgap nitride semiconductor materials, such as gallium nitride (GaN) and aluminum nitride (AlN), have great application prospects in short wavelength optoelectronic devices and high frequency high power electronic devices, whereas vapor phase epitaxy is the primary method of epitaxial growth of group iii nitride semiconductor materials and device fabrication thereof. Among them, the halide vapor phase epitaxy (Hydride Vapor Phase Epitaxy, HVPE) technology has become the mainstream technology for preparing GaN single crystal substrates at present due to its characteristics of fast growth rate, simple process, etc. In HVPE technology, a halide gas or halogen gas (e.g., hydrogen chloride or chlorine) is reacted with a group iii metal source (e.g., gallium or aluminum metal) in a reactor to produce a metal-containing precursor (e.g., gallium chloride or aluminum chloride), which is then transported by a carrier gas (e.g., nitrogen or hydrogen) to a substrate surface within a growth apparatus to react with ammonia within the growth apparatus to produce a nitride semiconductor material. In the HVPE system, the contact reaction time of the reactive source gas and the metal source is directly related to the effective utilization rate of the source gas, the growth rate of the GaN single crystal material and the epitaxial quality of the crystal.

In the current horizontal HVPE system structure, taking a group iii metal source as an example of gallium, a gallium boat of a metal reactor is generally of a simple semi-cylindrical structure, and comprises an air inlet pipe, a cylindrical container and an air outlet pipe, wherein the air inlet pipe comprises an air inlet connecting pipe and a spiral spray pipe, the spiral spray pipe is positioned in the cylindrical container, halide gas or halogen gas is introduced into the cylindrical container from the air inlet pipe and then reacts with metal on the surface layer of the gallium source in the cylindrical container, and then a product (such as gallium chloride) after the reaction and unreacted complete gas are output from the air outlet pipe to the cylindrical container. However, the gallium boat adopting the metal reactor is easy to cause the problem that the halide gas or the halogen gas and the metal gallium source steam are not completely reacted and directly enter the reaction cavity, the reaction conversion rate of the reaction gas and the metal gallium source is low, so that the crystal growth rate is difficult to improve, and meanwhile, unreacted halide can corrode crystal materials to interfere with the crystal growth, thereby causing serious negative effects on the crystal quality of the materials.

Based on this, the embodiment of the application provides a reactor, by arranging different air inlets on the reactor body, wherein the first air inlet is communicated with the first chamber, the second air inlet is communicated with the second chamber, and the first chamber and the second chamber are communicated through a plurality of flow control holes, so that the gas entering the second chamber through the second air inlet can flow into the first chamber through a plurality of flow control holes Kong Penru to form a compact gas curtain layer, the reaction gas entering the first chamber through the second air inlet can be caused to fully contact with the metal source in the first chamber, thereby effectively improving the reaction conversion efficiency of the reaction gas and the metal source, improving the growth rate of crystals to a certain extent, and avoiding the problems that unreacted reaction gas can corrode crystal materials to interfere with crystal growth and seriously negatively affect the crystal quality of the materials.

The specific structure of the reactor will be described with reference to the accompanying drawings.

Example 1

Referring to fig. 1, an embodiment of the present application provides a reactor 100, and the reactor 100 may include at least: the reactor body 1, wherein, the inside of reactor body 1 has reaction chamber 10, and is equipped with air inlet 20 and gas outlet 30 respectively on the opposite two lateral walls on the reactor body 1, and air inlet 20 and gas outlet 30 all communicate with reaction chamber 10.

Specifically, the reaction chamber 10 is partitioned into a first chamber 101 and a second chamber 102, the gas inlet 20 includes a first gas inlet 201 and a second gas inlet 202, the first gas inlet 201 and the gas outlet 30 are respectively communicated with the first chamber 101, the second gas inlet 202 is communicated with the second chamber 102, and a plurality of flow control holes 103 are provided between the first chamber 101 and the second chamber 102 to communicate the first chamber 101 and the second chamber 102.

In this way, the gas entering the second chamber 102 through the second gas inlet 202 can be sprayed into the first chamber 101 through the plurality of flow control holes 103 to form a compact gas curtain layer, so that the reaction gas entering the first chamber 101 through the second gas inlet 202 can be fully contacted with the metal source in the first chamber 101, the contact probability and the contact time of the reaction gas and the metal source are increased, the reaction conversion efficiency of the reaction gas and the metal source can be effectively improved, and the growth rate of crystals is further improved to a certain extent. Moreover, the problem of fluctuation of conversion rate and supply amount caused by gradual decrease of the metal source liquid level along with reaction consumption can be solved by injecting the plurality of flow control holes 103 into the first chamber 101, and the reactor 100 provided by the embodiment of the application can still ensure the contact reaction between the reaction gas and the metal source under the condition that the metal source liquid level decreases, so that the process stability can be ensured.

In an embodiment of the present application, as shown in fig. 1, the second chamber 102 may be located above the first chamber 101. In this way, when the gas entering the second chamber 102 from the second gas inlet 202 is injected into the first chamber 101 through the plurality of flow control holes 103, a gas curtain layer can be formed from top to bottom, and the gas in the second chamber 102 is injected into the first chamber 101 from top to bottom through the plurality of flow control holes 103, so that a larger impact can be generated on the reaction gas entering the first chamber 101 through the second gas inlet 202, and the reaction gas can be more fully contacted with the metal source in the first chamber 101.

A first baffle 104 may be disposed between the first chamber 101 and the second chamber 102, and the first baffle 104 may have a plurality of flow control holes 103 formed therein to communicate the first chamber 101 with the second chamber 102. By providing the first baffle 104 between the first chamber 101 and the second chamber 102, the reaction chamber 10 can be partitioned into two chambers, and by providing the first baffle 104 with a plurality of flow control holes 103, the first chamber 101 and the second chamber 102 can be communicated, and the process is simple and easy to realize.

The specific distribution manner of the plurality of flow control holes 103 on the first baffle 104 includes, but is not limited to, the following several possible implementations:

One possible implementation is: the plurality of flow control holes 103 are uniformly spaced apart on the first baffle 104. In this way, when the gas in the second chamber 102 is injected into the first chamber 101 through the plurality of flow control holes 103, a gas curtain layer can be formed relatively uniformly, so that the gas in the second chamber 102 uniformly impacts the reaction gas entering the first chamber 101 through the second gas inlet 202.

Another possible implementation is: the plurality of flow control holes 103 are distributed on the first baffle 104 at intervals, and the density of the flow control holes 103 is gradually increased from one end of the first baffle 104 close to the air inlet 20 to one end of the first baffle 104 close to the air outlet 30. In this way, when the gas in the second chamber 102 is injected into the first chamber 101 through the plurality of flow control holes 103, the gas in the second chamber 102 forms a denser gas curtain layer in a direction from one end of the first baffle 104 near the gas inlet 20 to one end of the first baffle 104 near the gas outlet 30, thereby generating denser impact on the reaction gas entering the first chamber 101 through the second gas inlet 202.

Yet another possible implementation is: the plurality of flow control holes 103 are distributed on the first baffle 104 at intervals, and the density of the flow control holes 103 is gradually reduced from one end of the first baffle 104 close to the air inlet 20 to one end of the first baffle 104 close to the air outlet 30. In this way, when the gas in the second chamber 102 is injected into the first chamber 101 through the plurality of flow control holes 103, the gas in the second chamber 102 forms a denser gas curtain layer in a direction from one end of the first baffle 104 near the gas outlet 30 to one end of the first baffle 104 near the gas inlet 20, thereby generating denser impact on the reaction gas entering the first chamber 101 through the second gas inlet 202.

Of course, in the embodiment of the present application, the specific distribution manner of the plurality of flow control holes 103 on the first baffle 104 may be flexibly set, for example, graded distribution, according to the air flow control requirement in the actual application scenario. The embodiments of the present application are not limited thereto nor to the examples described above.

In the embodiment of the present application, the diameter of the flow control hole 103 may be 50nm to 500um. It should be noted that, the numerical values and numerical ranges referred to in the present application are approximate values, and may have a certain range of errors due to the influence of the manufacturing process, and those errors may be considered to be negligible by those skilled in the art.

Further, the diameter of the flow control hole 103 may be 20um to 80um. For example, the diameter of the flow control hole 103 may be 30um, 50um, 70um, or the like, which is not limited by the embodiment of the present application, and is not limited to the above example. The diameter of the flow control holes 103 is smaller, so that when gas entering the second chamber 102 is sprayed into the first chamber 101 through the flow control holes 103, a relatively compact gas curtain layer is formed, and the reaction gas can be in contact with a metal source in the first chamber 101 more fully.

In addition, referring to fig. 1, a distance L1 between adjacent two of the plurality of flow control holes 103 may be 1 to 3mm. For example, the distance L1 between two adjacent flow control holes 103 may be 1.5mm, 2.0mm, 2.5mm, or the like, which is not limited by the embodiment of the present application, and is not limited to the above example. The distance between two adjacent control flow holes 103 of the plurality of control flow holes 103 is set smaller, so that the interval between the two adjacent control flow holes 103 can be reduced, and when the gas entering the second chamber 102 is sprayed into the first chamber 101 through the plurality of control flow holes 103, a more compact gas curtain layer is formed, so that the reaction gas can be fully contacted with the metal source in the first chamber 101.

It should be noted that, the shape of the flow control hole 103 may be circular, conical, square, or the like, which is not limited in the embodiment of the present application, and is not limited to the above example.

In the embodiment of the present application, the side of each flow control hole 103 facing the first chamber 101 may be further extended with an extension portion 1031. By forming the extension portion 1031 extending toward one side of the first chamber 101 at each flow control hole 103, a spout structure can be formed at the position of each flow control hole 103, and when the gas in the second chamber 102 enters the first chamber 101 through the spout structure, a greater impact can be generated on the reaction gas in the first chamber 101, so that the reaction gas can be more sufficiently contacted with the metal source in the first chamber 101. In addition, the cross-sectional shape of the extension portion 1031 may be the same as the shape of the flow control hole 103. That is, when the shape of the flow control hole 103 is circular, the cross-sectional shape of the extension 1031 may be circular.

The extension 1031 may have an extension length of 1-3mm. For example, the extension length of the extension portion 1031 may be 1.5mm, 2.0mm, 2.5mm, or the like, which is not limited by the embodiment of the present application, and is not limited to the above example.

Referring to fig. 2, a second baffle 40 may be further provided between the reaction chamber 10 and the gas outlet 30, wherein one end of the second baffle 40 is connected to the lower bottom wall 11 of the reactor body, and a first gap 50 is formed between the other end of the second baffle 40 and the upper bottom wall 12 of the reactor body. In this way, after the partially incompletely reacted reaction gas in the first chamber 101 and the metal source vapor in the first chamber 101 meet the second baffle 40, the reaction gas is blocked by the second baffle 40 to return to form a vortex, and the residence time of the reaction gas in the reactor body 1 is prolonged. The partial incompletely reacted reaction gas in the first chamber 101 and the metal source steam in the first chamber 101 can be fully contacted and reacted, and the gas generated by the reaction flows out of the reaction chamber 10 through the first gap 50.

In addition, by setting the second baffle 40 and combining with the regulation and control of the partial pressure and flow rate of the gas (the gas entering through the second gas inlet 202), the flow direction and flow field of the reaction gas (the gas entering through the first gas inlet 201) can be effectively changed, the mixing of the unreacted reaction gas and the metal source steam into the reaction precursor (i.e. the gas generated by the reaction of the reaction gas and the metal source steam) is effectively prevented, the conversion efficiency of the reaction gas into the metal precursor is greatly reduced, so that the stability of the conversion efficiency of the metal precursor can be realized, and the large-scale production is facilitated.

In one possible implementation, as shown in fig. 3, the reaction chamber 10 may further have at least one channel 105 therein, wherein an inlet of the channel 105 communicates with the first chamber 101 and an outlet of the channel 105 communicates with the gas outlet 30. In this way, the flow path within the reaction chamber 10 can be increased, further increasing the chance of contact between the reactant gas and the metal source vapor. The reaction gas partially incompletely reacted in the first chamber 101 and the metal source steam in the first chamber 101 can further react in the channel 105, so that the reaction conversion efficiency of the reaction gas and the metal source is effectively improved, and the growth rate, the growth quality and the product yield of crystals are improved to a certain extent.

Referring to fig. 4, the reaction chamber 10 may have two channels 105 therein. Wherein the inlet of a first channel 1051 of the two channels 105 is in communication with the first chamber 101, the outlet of the first channel 1051 is in communication with the inlet of a second channel 1052 of the two channels 105, the outlet of the second channel 1052 is in communication with the air outlet 30, and the inlet of the first channel 1051 is located on the same side of the reactor body 1 as the outlet of the second channel 1052. By having two channels 105 within the reaction chamber 10, the flow path within the reaction chamber 10 can be further increased, and since the inlet of the first channel 1051 and the outlet of the second channel 1052 are located on the same side of the reactor body 1, the occupation space of the first channel 1051 and the second channel 1052 within the reaction chamber 10 can also be saved to some extent.

In an embodiment of the present application, as shown in fig. 5, a flow blocking structure 106 may be further disposed in at least one channel 105, where the channel 105 has a first side wall, a second side wall, an upper bottom wall, and a lower bottom wall, the flow blocking structure 106 is fixedly connected to any one, any two, or any three of the first side wall, the second side wall, the upper bottom wall, and the lower bottom wall, and a second gap 107 is formed between the flow blocking structure 106 and at least one of the first side wall, the second side wall, the upper bottom wall, and the lower bottom wall. By providing the flow blocking structure 106 in at least one channel 105, a certain obstacle can be formed to the flow of the gas, the contact time of the reaction gas and the metal source is increased again, and the conversion efficiency of the metal precursor and the epitaxial growth quality of the crystal are improved.

Specifically, after the partially incompletely reacted reaction gas in the first chamber 101 and the metal source steam in the first chamber 101 enter the channel 105, the gas is blocked by the flow blocking structure 106 to form vortex, so that the gas can be prevented from flowing rapidly in the channel 105, the incompletely reacted reaction gas and the metal source steam can be effectively prevented from escaping, the partially incompletely reacted reaction gas and the metal source steam in the first chamber 101 can fully react again, and the gas generated after the full reaction flows out of the reaction chamber 10 through the second gap 107, so that the conversion rate and the crystal growth speed are ensured.

It will be appreciated that in the embodiment of the present application, the flow blocking structure 106 may be disposed only in the first channel 1051, the flow blocking structure 106 may be disposed only in the second channel 1052, and the flow blocking structure 106 may be disposed in both the first channel 1051 and the second channel 1052. Illustratively, as shown in fig. 6, the flow blocking structure 106 is disposed in both the first channel 1051 and the second channel 1052, thereby providing a better flow blocking effect.

In addition, the flow blocking structure 106 may be disposed at other positions in the reaction chamber 10 than the channels 105 (the first channel 1051 and the second channel 1052) to provide a flow blocking effect.

With continued reference to fig. 5 or 6, the flow blocking structure 106 may include: at least one flow blocking body 1061, wherein the flow blocking body 1061 may be fixedly coupled to one of the upper and lower bottom walls of the channel 105, and the flow blocking body 1061 may form a second gap 107 with the other of the upper and lower bottom walls of the channel 105. In this way, after the partially incompletely reacted reaction gas in the first chamber 101 and the metal source vapor in the first chamber 101 enter the channel 105, since the flow blocking body 1061 is fixedly connected with one of the upper bottom wall and the lower bottom wall of the channel 105, the partially incompletely reacted reaction gas and the metal source vapor are blocked to form a vortex, so that the escape of the partially incompletely reacted reaction gas and the metal source vapor can be effectively prevented, the partially incompletely reacted reaction gas and the metal source vapor in the first chamber 101 can be more fully reacted, and then the gas generated after the fully reaction flows out of the reaction chamber 10 through the second gap 107 formed between the flow blocking body 1061 and the other of the upper bottom wall and the lower bottom wall of the channel 105, thereby ensuring the conversion rate and the crystal growth speed.

As an alternative embodiment, the number of the flow blocking bodies 1061 may be plural, and the plurality of flow blocking bodies 1061 may be spaced apart along the extending direction of the passage 105. By increasing the amount of the internal resistance fluid 1061 in the channel 105, the reaction gas and the metal source vapor which are not fully reacted can be further blocked, so that the escape of the reaction gas and the metal source vapor which are not fully reacted in the first chamber 101 can be more effectively prevented, and the reaction gas and the metal source vapor which are not fully reacted can be further fully reacted.

It will be appreciated that in embodiments of the present application, the specific configuration of the flow blocking body 1061 includes, but is not limited to, the following several possible implementations:

one possible implementation is: the baffle 1061 has a columnar structure. For example, the flow blocking body 1061 may be a cylindrical structure (see fig. 5) or a prismatic structure (see fig. 7), which is not limited by the embodiment of the present application, and is not limited to the above examples.

Another possible implementation is: the baffle 1061 has a tapered structure. For example, the flow resistor 1061 may be a cone structure.

Yet another possible implementation is: the flow blocking body 1061 has a spiral structure. By arranging the fluid in a spiral structure, the contact area between the outer surface of the flow blocking body 1061 and the gas can be increased, and thus, the flow blocking body 1061 can perform a better blocking function on the gas.

Of course, in other possible implementations, the flow blocking body 1061 may also be a labyrinth-like rotating structure, and the specific arrangement of the labyrinth-like rotating structure is not limited by the embodiment of the present application, and is not limited to the above examples. Moreover, the shape of the reactor 100 is not limited in this embodiment, and the reactor 100 may be designed into a desired shape according to the connection or spatial arrangement of the reactor 100 and the external growth device, for example, the reactor 100 may be a cylinder, a cube, a cuboid, or the like. And, the volume of the reactor 100, the space of each chamber and the volume ratio thereof can be flexibly set according to the actual process requirements, which is not limited in the embodiment of the present application.

In addition, as an alternative embodiment, the axial direction of the flow blocking body 1061 may be perpendicular to the direction of extension of the channel 105. In this way, the blocking effect of the blocking body 1061 on the gas in the passage 105 can be further increased. Of course, in other embodiments, the axial direction of the flow blocking body 1061 may be parallel to the extending direction of the channel 105, or the angle formed between the axial direction of the flow blocking body 1061 and the extending direction of the channel 105 may be less than 90 degrees, i.e., the axial direction of the flow blocking body 1061 may be disposed obliquely with respect to the extending direction of the channel 105.

In addition, in the embodiment of the application, the metal source injection operation is simple, and the maintenance cost is reduced to a certain extent. That is, the metal source can be injected through the reaction gas inlet (i.e., the first gas inlet 201), and compared with the operation of taking out the quartz boat for injection or adopting pipeline injection in the prior art, the method has the advantages of high efficiency and convenience.

Example two

On the basis of the first embodiment, the embodiment of the present application provides a reactor 100, and the reactor 100 may be a group III metal source reactor. The metal source in the metal source reactor may be a group III metal.

In the embodiment of the present application, the gas introduced into the first gas inlet 201 of the group III metal source reactor may be a halide gas or a halogen gas. Wherein the halide gas may be any one or more of hydrogen chloride (HCl), hydrogen bromide (HBr) or Hydrogen Iodide (HI), and the halogen gas may be chlorine (Cl) ₂ ) Bromine gas (Br) ₂ ) Or iodine gas (I) ₂ ) Any one or more of the following. The gas introduced into the second gas inlet 202 of the group III metal source reactor may be any one or more of hydrogen, argon and nitrogen, for example, the gas introduced into the second gas inlet 202 may be a hydrogen-argon mixed gas.

It should be noted that, when the gas introduced into the first gas inlet 201 of the reactor 100 is a halide gas or a halogen gas, the material of the reactor 100 may be quartz or corundum. The material of the reactor 100 is not limited in the embodiment of the present application, so long as the reactor can resist high temperature and corrosion of halide gas or halogen gas, i.e., the reactor 100 can be prevented from being damaged or corroded by halide gas or halogen gas without being resistant to high temperature.

In one possible implementation, the quartz may be high purity quartz, among others.

In addition, the III-metal source reactor can be a gallium source reactor, and the gallium source is reversedThe reactor body 1 of the reactor has liquid gallium inside the reaction chamber 10. In operation, the gallium source reactor is operated with reference to FIG. 8, and a halide gas (HCl, HBr or HI) or a halogen gas (Cl ₂ 、Br ₂ Or I ₂ ) Enters the first chamber 101 from the first gas inlet 201 and reacts with the liquid gallium in the first chamber 101 to generate gallium halide gas (e.g., gallium chloride, gallium bromide, or gallium iodide). After the hydrogen, argon or nitrogen gas enters the first chamber 102 from the second air inlet 202 and is fully gathered in the second chamber 102, the hydrogen, argon or nitrogen gas is sprayed into the first chamber 101 through the flow control holes 103, a compact gas curtain layer is formed above the first chamber 101 (i.e. above the liquid level of the metal source in the first chamber 101), so that halide gas or halogen gas can be fully contacted with liquid gallium in the first chamber 101, and the reaction conversion efficiency of the halide gas or halogen gas and the liquid gallium can be effectively improved.

In addition, in the direction that the halide gas or halogen gas flows from the side, close to the first gas inlet 201, in the first chamber 101 to the side, away from the first gas inlet 201, in the process, after the halide gas or halogen gas which is partially not fully reacted and gallium metal vapor in the first chamber 101 meet the second baffle 40, the halide gas or halogen gas is blocked by the second baffle 40 to return to form a vortex, so that the partially not fully reacted halide gas or halogen gas in the first chamber 101 can be fully contacted and reacted with the gallium metal vapor, and the gas generated after the reaction flows out through the first gap 50.

After the gallium halide gas, the residual incompletely reacted halide gas or the halogen gas generated by the reaction and the gallium metal vapor in the first chamber 101 enter the first channel 1051 and the second channel 1052 in sequence from the first chamber 101, vortex is blocked by the blocking body 1061, the incompletely reacted halide gas or the halogen gas and the gallium metal vapor can be effectively prevented from escaping, the incompletely reacted halide gas or the halogen gas and the gallium metal vapor in the first chamber 101 can be fully reacted, and then the gas generated by the fully reaction flows out of the channel 105 through the second gap 107 and then flows out of the gallium source reactor through the gas outlet 30, so that the reaction conversion rate of the halide gas or the halogen gas and the gallium metal vapor is ensured.

Furthermore, it should be noted that in other embodiments, the reactor 100 includes, but is not limited to, a group III metal source reactor, i.e., the reactor 100 may also be a group I metal source reactor or a group II metal source reactor. The embodiments of the present application are not limited thereto nor to the examples described above.

Example III

The embodiment of the application provides a growth device, which at least comprises: a growth apparatus and a reactor 100 as in the first or second embodiment described above. Wherein the outlet of the reactor 100 is in communication with the inlet of the growth apparatus.

In the embodiment of the present application, the outlet of the reactor 100 may be connected to the outlet 30 of the reactor 100, or the outlet 30 of the reactor 100 may be the outlet of the reactor 100.

Wherein, taking the gas outlet 30 of the reactor 100 as the outlet of the reactor 100, the reactor 100 is a gallium source reactor, for example, the growth device is provided with a substrate, and the growth device can be provided with ammonia (NH) ₃ ) After the gallium halide gas (such as gallium chloride, gallium bromide or gallium iodide) flowing out of the gas outlet 30 of the reactor 100 enters the growth apparatus from the inlet of the growth apparatus, the gas enters the growth apparatus together with NH in the growth apparatus ₃ A reaction occurs to form a nitride semiconductor material (e.g., gaN single crystal material) on the substrate surface.

According to the growth device provided by the embodiment of the application, the growth device at least comprises growth equipment and a reactor 100, wherein the outlet of the reactor 100 is communicated with the inlet of the growth equipment, the first air inlet 201 is communicated with the first chamber 101, the second air inlet 202 is communicated with the second chamber 102 by arranging different air inlets 20 on the reactor body 1, and the first chamber 101 and the second chamber 102 are communicated through a plurality of flow control holes 103, so that the gas entering the second chamber 102 through the second air inlet 202 can be sprayed into the first chamber 101 through the plurality of flow control holes 103 to form a compact gas curtain layer, and the reaction gas entering the first chamber 101 through the second air inlet 202 can be enabled to be fully contacted with a metal source in the first chamber 101, thereby effectively improving the reaction conversion efficiency of the reaction gas and the metal source. The gas generated in the reactor 100 enters the inlet of the growth device from the gas outlet 30 to further react with substances in the growth device to generate crystals, and the reaction conversion efficiency of the reactor 100 is improved, so that the problem that the reaction gas does not completely react in the reactor and then enters the growth device can be avoided, and the growth rate of the crystals in the growth device, the quality stability and consistency of the crystals can be improved to a certain extent, and the mass production of epitaxial monocrystalline materials can be realized.

It will be appreciated that increasing the growth rate of crystals within the growth apparatus may reduce the cost of the process for growing crystals. By increasing the conversion rate of the reaction gas (halide gas or halogen gas) to gallium halide gas (e.g., gallium chloride, gallium bromide, or gallium iodide), an increase in the crystal growth rate can be achieved, thereby reducing the growth time and the manufacturing cost of the substrate.

The quality stability and consistency of crystals in a growth device can be improved by avoiding incomplete reaction of reaction gas in a reactor and subsequent entry of the reaction gas into growth equipment. By avoiding the mixing of the reaction gas and the metal source steam into the growth device along with the gallium halide gas, parasitic reaction and polycrystal growth in the growth device can be inhibited, and the problem that unreacted reaction gas can corrode crystal materials to interfere with crystal growth after entering the growth device and cause serious negative influence on the crystal quality of the materials is avoided, so that the quality stability and consistency of crystals in the growth device can be improved.

In describing embodiments of the present application, it should be noted that, unless explicitly stated or limited otherwise, the terms "mounted," "connected," and "coupled" should be construed broadly, and may be, for example, fixedly coupled, indirectly coupled through an intermediary, in communication between two elements, or in an interaction relationship between two elements. The specific meaning of the above terms in the embodiments of the present application will be understood by those of ordinary skill in the art according to specific circumstances.

The embodiments of the application may be implemented or realized in any number of ways, including as a matter of course, such that the apparatus or elements recited in the claims are not necessarily oriented or configured to operate in any particular manner. In the description of the embodiments of the present application, the meaning of "a plurality" is two or more unless specifically stated otherwise.

The terms first, second, third, fourth and the like in the description and in the claims and in the above-described figures, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that embodiments of the application described herein may be implemented, for example, in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the embodiments of the present application, and are not limited thereto; although embodiments of the present application have been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.

Claims

A reactor, comprising at least:

a reactor body;

the reactor comprises a reactor body, a reaction chamber, a gas inlet and a gas outlet, wherein the reactor body is internally provided with the reaction chamber, and the two opposite side walls of the reactor body are respectively provided with the gas inlet and the gas outlet which are communicated with the reaction chamber;

the reaction chamber is divided into a first chamber and a second chamber, the air inlet comprises a first air inlet and a second air inlet, the first air inlet and the air outlet are respectively communicated with the first chamber, and the second air inlet is communicated with the second chamber;

And a plurality of flow control holes are arranged between the first chamber and the second chamber so as to communicate the first chamber with the second chamber.
The reactor of claim 1, wherein the second chamber is located above the first chamber.
The reactor according to claim 1 or 2, wherein a first baffle plate is provided between the first chamber and the second chamber, and the first baffle plate has a plurality of flow control holes thereon to communicate the first chamber with the second chamber.
A reactor according to claim 3, wherein a plurality of said flow control holes are uniformly spaced on said first baffle plate;

or, the plurality of flow control holes are distributed on the first baffle at intervals, and the density of the flow control holes is gradually increased from one end of the first baffle close to the air inlet to one end of the first baffle close to the air outlet;

or, the plurality of flow control holes are distributed on the first baffle at intervals, and the density of the flow control holes is gradually reduced from one end of the first baffle, which is close to the air inlet, to one end of the first baffle, which is close to the air outlet.
The reactor according to claim 3 or 4, wherein the diameter of the flow control holes is 50nm-500um.
The reactor of claim 5, wherein the flow control holes have a diameter of 20um to 80um.
The reactor according to any one of claims 3 to 6, wherein a distance between adjacent two of the plurality of flow control holes is 1 to 3mm.
A reactor according to any one of claims 3 to 7, wherein each flow control aperture extends towards one side of the first chamber to form an extension.
The reactor of claim 8, wherein the extension has an extension length of 1-3mm.
The reactor according to any one of claims 1 to 9, wherein a second baffle is provided between the reaction chamber and the gas outlet;

one end of the second baffle is connected with the lower bottom wall of the reactor body, and a first gap is formed between the other end of the second baffle and the upper bottom wall of the reactor body.
The reactor of any one of claims 1-10, wherein the reaction chamber further has at least one passageway therein, an inlet of the passageway being in communication with the first chamber and an outlet of the passageway being in communication with the gas outlet.
The reactor of claim 11, wherein there are two of said channels within said reaction chamber;

an inlet of a first channel of the two channels is communicated with the first chamber, an outlet of the first channel is communicated with an inlet of a second channel of the two channels, and an outlet of the second channel is communicated with the air outlet;

and the inlet of the first channel and the outlet of the second channel are positioned on the same side of the reactor body.
Reactor according to claim 11 or 12, wherein at least one of said channels is provided with a flow blocking structure; the channel has a first side wall, a second side wall, an upper bottom wall, and a lower bottom wall;

the choke structure is fixedly connected with any one, any two or any three of the first side wall, the second side wall, the upper bottom wall and the lower bottom wall, and a second gap is formed between the choke structure and at least one of the first side wall, the second side wall, the upper bottom wall and the lower bottom wall.
The reactor of claim 13, wherein the flow blocking structure comprises: at least one fluid barrier;

The flow blocking body is fixedly connected with one of the upper bottom wall and the lower bottom wall of the channel, and the second gap is formed between the flow blocking body and the other of the upper bottom wall and the lower bottom wall of the channel.
The reactor of claim 14, wherein the number of flow-blocking bodies is a plurality; the plurality of flow blocking bodies are distributed at intervals along the extending direction of the channel.
A reactor according to claim 14 or 15, wherein the baffle is of columnar configuration.
A reactor according to claim 14 or 15, wherein the baffle is of helical configuration.
The reactor according to any one of claims 14-17, wherein the axial direction of the flow blocking body is perpendicular to the direction of extension of the channel.
The reactor according to any one of claims 1 to 18, wherein the reactor is a group III metal source reactor.
The reactor of claim 19, wherein the reactor is a gallium source reactor.
The reactor of claim 20, wherein said reaction chamber of said reactor body has liquid gallium therein.
The reactor according to any one of claims 19 to 21, wherein the gas introduced into the first inlet of the reactor is a halide gas or a halogen gas.
The reactor according to claim 22, wherein when the gas introduced into the first gas inlet of the reactor is a halide gas or a halogen gas, the material of the reactor is quartz or corundum.
The reactor of any one of claims 19-23, wherein the gas introduced into the second inlet of the reactor is any one or more of hydrogen, argon and nitrogen.
A growth device comprising at least: growth apparatus and reactor according to any one of the preceding claims 1-24; wherein the outlet of the reactor is in communication with the inlet of the growth apparatus.