WO2022130987A1 - Dispositif d'imagerie à semi-conducteur et son procédé de fabrication - Google Patents

Dispositif d'imagerie à semi-conducteur et son procédé de fabrication Download PDF

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Publication number
WO2022130987A1
WO2022130987A1 PCT/JP2021/044167 JP2021044167W WO2022130987A1 WO 2022130987 A1 WO2022130987 A1 WO 2022130987A1 JP 2021044167 W JP2021044167 W JP 2021044167W WO 2022130987 A1 WO2022130987 A1 WO 2022130987A1
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Prior art keywords
light
substrate
shielding film
groove
solid
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PCT/JP2021/044167
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English (en)
Japanese (ja)
Inventor
佳之 長濱
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ソニーセミコンダクタソリューションズ株式会社
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Publication of WO2022130987A1 publication Critical patent/WO2022130987A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures

Definitions

  • This disclosure relates to a solid-state image sensor and a method for manufacturing the same.
  • the solid-state image sensor includes a photoelectric conversion unit and a memory unit in the substrate
  • a groove is provided between the photoelectric conversion unit and the memory unit.
  • This groove may include a penetrating portion that penetrates the substrate and a non-penetrating portion that does not penetrate the substrate.
  • the penetrating portion is provided, for example, in order to prevent light from entering the memory portion.
  • the non-penetrating portion is provided, for example, to secure a path for transferring charges from the photoelectric conversion unit to the memory unit.
  • a light-shielding film is generally embedded in the penetrating portion and the non-penetrating portion.
  • the present disclosure provides a solid-state image sensor capable of forming a suitable light-shielding film and a method for manufacturing the same.
  • the solid-state imaging device on the first side surface of the present disclosure includes a substrate having a first surface opposite to the light incident surface, a second surface serving as the light incident surface, and a first surface provided in the substrate.
  • a first pixel having a photoelectric conversion unit and a first charge storage unit, and a second pixel having a second photoelectric conversion unit and a second charge storage unit provided in the substrate are adjacent to each other in the substrate.
  • the first light-shielding film provided between the second photoelectric conversion unit and the first charge storage unit, the multilayer wiring layer provided on the first surface side of the substrate, and the multilayer wiring layer. It is provided with a second light-shielding film that is provided and is in contact with the first light-shielding film.
  • the solid-state image sensor on the first side surface is provided on the second surface of the substrate, overlaps the first charge storage portion in a plan view, and is in contact with the first light-shielding film.
  • a light-shielding film may be further provided. As a result, for example, it is possible to suppress the formation of a gap between the first light-shielding film and the third light-shielding film, and it is possible to form a suitable light-shielding film.
  • the width of the first light-shielding film may be narrowed as it progresses from the first surface side to the second surface side. This makes it possible to form a first light-shielding film in the substrate from the first surface side of the substrate, for example.
  • the multilayer wiring layer includes an insulating layer provided on the first surface of the substrate, and the first light-shielding film is provided in the substrate and in the insulating layer. You may. Thereby, for example, by forming the first light-shielding film penetrating the substrate and the insulating layer, it is possible to suppress the formation of a gap between the first light-shielding film and the second light-shielding film.
  • the insulating film may function as a gate insulating film of a transistor.
  • the insulating film may function as a gate insulating film of a transistor.
  • the second light-shielding film may be in contact with the first light-shielding film and the electrode layer of the transistor.
  • the second light-shielding film by forming the second light-shielding film so as to cover the first light-shielding film and the electrode layer, it is possible to suppress the formation of a gap between the first light-shielding film and the second light-shielding film. ..
  • the first light-shielding film may be provided in the first groove penetrating the substrate. This makes it possible to form the first light-shielding film in the substrate, for example, by embedding the first light-shielding film in the first groove.
  • the width of the first groove may be narrowed as it progresses from the first surface side to the second surface side. This makes it possible to form a first groove in the substrate from the first surface side of the substrate, for example.
  • the third light-shielding film may be provided on the second surface of the substrate and in the second groove that does not penetrate the substrate. This makes it possible, for example, to prevent light from entering the charge storage unit from the photoelectric conversion unit by the first light-shielding film and the third light-shielding film.
  • the width of the second groove may be widened from the first surface side to the second surface side. This makes it possible to form, for example, a second groove in the substrate from the second surface side of the substrate.
  • the solid-state imaging device on the second side of the present disclosure includes a substrate having a first surface opposite to the light incident surface, a second surface serving as the light incident surface, and a first surface provided in the substrate. It penetrates the first pixel having a photoelectric conversion unit and a first charge storage unit, a second pixel having a second photoelectric conversion unit and a second charge storage unit provided in the substrate, and the substrate. A first groove provided between the adjacent second photoelectric conversion unit and the first charge storage unit, the first portion provided on the first surface side in the substrate, and the said.
  • a first groove including a second portion provided on the second surface side in the substrate, a first light-shielding film provided in the first portion, and a first light-shielding film provided on the first surface side of the substrate. It includes a multi-layer wiring layer and a second light-shielding film provided in the multi-layer wiring layer and in contact with the first light-shielding film. As a result, for example, it is possible to suppress the formation of a gap between the first light-shielding film and the second light-shielding film, and it is possible to form a suitable light-shielding film.
  • the width of the first portion becomes narrower from the first surface side to the second surface side, and the width of the second portion is from the first surface side. It may become wider as it goes to the second surface side. This makes it possible to form a first groove in the substrate from the first surface side and the second surface side of the substrate, for example.
  • the solid-state image sensor on the second side surface is provided on the second surface of the substrate and in the second portion, and is overlapped with the first charge storage portion in a plan view. May be further provided. This makes it possible, for example, to form a first light-shielding film in the first groove from the first surface side of the substrate and to form a third light-shielding film in the first groove from the second surface side of the substrate.
  • the third light-shielding film may be further provided in a second groove that does not penetrate the substrate. This makes it possible, for example, to prevent light from entering the charge storage unit from the photoelectric conversion unit by the first light-shielding film and the third light-shielding film.
  • the width of the second groove may become wider as it progresses from the first surface side to the second surface side. This makes it possible to form, for example, a second groove in the substrate from the second surface side of the substrate.
  • the first groove and the second groove may be connected to each other in the substrate. This makes it possible to suppress light from entering the charge storage portion from the gap between the first light-shielding film in the first groove and the third light-shielding film in the second groove, for example.
  • a substrate having a first surface opposite to the light incident surface and a second surface to be the light incident surface is prepared, and the substrate is provided in the substrate.
  • a first pixel having a first photoelectric conversion unit and a first charge storage unit is formed, a second pixel having a second photoelectric conversion unit and a second charge storage unit is formed in the substrate, and a second pixel having a second photoelectric conversion unit and a second charge storage unit is formed in the substrate.
  • a first light-shielding film is formed between the adjacent second photoelectric conversion unit and the first charge storage unit, a multilayer wiring layer is formed on the first surface side of the substrate, and the inside of the multilayer wiring layer is formed.
  • the method for manufacturing the solid-state image sensor on the third side surface further includes forming a first groove penetrating the substrate, and the first light-shielding film is the first from the first surface side of the substrate. It may be formed in one groove. This makes it possible to form the first light-shielding film in the substrate, for example, by embedding the first light-shielding film in the first groove.
  • a third light-shielding film that overlaps the first charge storage portion in a plan view and is in contact with the first light-shielding film is formed on the second surface of the substrate. It may further include forming. As a result, for example, it is possible to suppress the formation of a gap between the first light-shielding film and the third light-shielding film, and it is possible to form a suitable light-shielding film.
  • the method for manufacturing the solid-state imaging device on the third side surface further includes forming a second groove that does not penetrate the substrate, and the third light-shielding film is formed on the second surface of the substrate. Moreover, it may be formed in the second groove from the second surface side of the substrate. This makes it possible, for example, to prevent light from entering the charge storage unit from the photoelectric conversion unit by the first light-shielding film and the third light-shielding film.
  • FIG. 1 It is a top view which shows the specific example of the setting position of the image pickup part of FIG. It is a figure which shows an example of the schematic structure of an endoscopic surgery system. It is a block diagram which shows an example of the functional structure of a camera head and a CCU.
  • FIG. 1 is a block diagram showing a configuration of a solid-state image sensor according to the first embodiment.
  • the solid-state image sensor of FIG. 1 is a CMOS (Complementary Metal Oxide Semiconductor) type image sensor, which includes a pixel array region 2 having a plurality of pixels 1, a control circuit 3, a vertical drive circuit 4, and a plurality of column signal processes. It includes a circuit 5, a horizontal drive circuit 6, an output circuit 7, a plurality of vertical signal lines 8, and a horizontal signal line 9.
  • CMOS Complementary Metal Oxide Semiconductor
  • Each pixel 1 includes a photodiode that functions as a photoelectric conversion unit and a MOS transistor that functions as a pixel transistor.
  • Examples of pixel transistors are transfer transistors, reset transistors, amplification transistors, selection transistors, and the like. These pixel transistors may be shared by some pixels 1.
  • the pixel array area 2 has a plurality of pixels 1 arranged in a two-dimensional array.
  • the pixel array region 2 is an effective pixel region that receives light and performs photoelectric conversion to amplify and output the signal charge generated by the photoelectric conversion, and a black reference pixel that outputs optical black as a reference for the black level. Includes areas and.
  • the black reference pixel region is arranged on the outer peripheral portion of the effective pixel region.
  • the control circuit 3 generates various signals that serve as reference for the operation of the vertical drive circuit 4, the column signal processing circuit 5, the horizontal drive circuit 6, etc., based on the vertical sync signal, the horizontal sync signal, the master clock, and the like.
  • the signal generated by the control circuit 3 is, for example, a clock signal or a control signal, and is input to the vertical drive circuit 4, the column signal processing circuit 5, the horizontal drive circuit 6, and the like.
  • the vertical drive circuit 4 includes, for example, a shift register, and scans each pixel 1 in the pixel array area 2 in a row unit in the vertical direction.
  • the vertical drive circuit 4 further supplies a pixel signal based on the signal charge generated by each pixel 1 to the column signal processing circuit 5 through the vertical signal line 8.
  • the column signal processing circuit 5 is arranged, for example, for each column of the pixel 1 in the pixel array area 2, and the signal processing of the signal output from the pixel 1 for one row is based on the signal from the black reference pixel area. Do it for each row. Examples of this signal processing are denoising and signal amplification.
  • the horizontal drive circuit 6 includes, for example, a shift register, and supplies pixel signals from each column signal processing circuit 5 to the horizontal signal line 9.
  • the output circuit 7 performs signal processing on the signal supplied from each column signal processing circuit 5 through the horizontal signal line 9, and outputs the signal to which this signal processing has been performed.
  • FIG. 2 is a cross-sectional view showing the structure of the solid-state image sensor of the first embodiment.
  • FIG. 2 shows a vertical cross section of the pixel array region 2 of FIG. 1, specifically, shows a vertical cross section of three pixels 1 in the pixel array region 2.
  • These pixels 1 are examples of the first pixel and the second pixel of the present disclosure.
  • the solid-state imaging device of the present embodiment includes a substrate 11, a plurality of photoelectric conversion units 12, a p + type semiconductor region 13, an n-type semiconductor region 14, and a p-type semiconductor region 15 included in each photoelectric conversion unit 12. It includes a plurality of memory units 16, a p + type semiconductor region 17, an n ⁇ type semiconductor region 18, and a p-type semiconductor region 19 included in each memory unit 16, and another semiconductor region 20 in the substrate 11.
  • These photoelectric conversion units 12 are examples of the first photoelectric conversion unit and the second photoelectric conversion unit of the present disclosure.
  • these memory units 16 are examples of the first charge storage unit and the second charge storage unit of the present disclosure.
  • the solid-state image pickup device of the present embodiment further includes a plurality of grooves 21, an insulating film 22 and a light-shielding film 23 provided in each groove 21, and a plurality of grooves 24 (FIG. 2 shows one of them).
  • a first insulating film 25, a second insulating film 26, and a light-shielding film 27 provided in each groove 24 or the like, a flattening film 28, a plurality of color filters 29, and a plurality of on-chip lenses 30 are provided.
  • the groove 21 is an example of the first groove of the present disclosure
  • the groove 24 is an example of the second groove of the present disclosure.
  • the light-shielding film 23 is an example of the first light-shielding film of the present disclosure
  • the light-shielding film 27 is an example of the third light-shielding film of the present disclosure.
  • the solid-state imaging device of the present embodiment further includes an insulating layer 31 that functions as a gate insulating film, an interlayer insulating film 32, an electrode layer 33 that functions as a gate electrode, and a light-shielding film 34 provided in the vicinity of each groove 21.
  • a plurality of contact plugs 35, a plurality of wiring layers 36, 37, 38, 39, a plurality of via plugs 40, and a support substrate 41 are provided.
  • the light-shielding film 34 is an example of the second light-shielding film of the present disclosure.
  • the layer 42 including the insulating layer 31, the interlayer insulating film 32, the electrode layer 33, the light-shielding film 34, the contact plug 35, the wiring layers 36 to 39, and the via plug 40 is an example of the multilayer wiring layer of the present disclosure.
  • FIG. 2 shows the X-axis, Y-axis, and Z-axis that are perpendicular to each other.
  • the X and Y directions correspond to the horizontal direction (horizontal direction), and the Z direction corresponds to the vertical direction (vertical direction). Further, the + Z direction corresponds to the upward direction, and the ⁇ Z direction corresponds to the downward direction.
  • the ⁇ Z direction may or may not exactly coincide with the direction of gravity.
  • FIG. 3 is an enlarged cross-sectional view showing the structure of the solid-state image sensor of the first embodiment.
  • the substrate 11 is, for example, a semiconductor substrate such as a silicon (Si) substrate.
  • FIG. 2 shows the front surface S1 and the back surface S2 of the substrate 11.
  • the front surface S1 of the substrate 11 is a surface (lower surface) in the ⁇ Z direction of the substrate 11
  • the back surface S2 of the substrate 11 is a surface (upper surface) in the + Z direction of the substrate 11. Since the solid-state image sensor of this embodiment is a back-illuminated type, the back surface S2 of the substrate 11 is the light incident surface (light receiving surface) of the substrate 11.
  • the front surface S1 of the substrate 11 is an example of the first surface of the present disclosure
  • the back surface S2 of the substrate 11 is an example of the second surface of the present disclosure.
  • the photoelectric conversion unit 12 is provided in the substrate 11 for each pixel 1.
  • Each photoelectric conversion unit 12 includes a p + type semiconductor region 13 formed in the substrate 11 in order from the front surface S1 side to the back surface S2 side of the substrate 11, an n ⁇ type semiconductor region 14, and a p-type semiconductor region 15. ing.
  • a photodiode is realized by a pn junction between the p + type semiconductor region 13 and the n-type semiconductor region 14 and a pn junction between the n-type semiconductor region 14 and the p-type semiconductor region 15. And the photodiode converts light into a charge.
  • the photoelectric conversion unit 12 receives light from the back surface S2 side of the substrate 11, generates a signal charge according to the amount of the received light, and stores the generated signal charge in the n-type semiconductor region 14.
  • the memory unit 16 is also provided in the substrate 11 for each pixel 1.
  • Each memory unit 16 includes a p + type semiconductor region 17 formed in the substrate 11 in order from the front surface S1 side to the back surface S2 side of the substrate 11, an n ⁇ type semiconductor region 18, and a p-type semiconductor region 19. There is. However, the total thickness of the p + type semiconductor region 17, the n-type semiconductor region 18, and the p-type semiconductor region 19 in the Z direction is the Z of the p + type semiconductor region 13, the n-type semiconductor region 14, and the p-type semiconductor region 15. It is thinner than the total thickness in the direction.
  • the memory unit 16 in each pixel 1 accumulates the signal charge transferred from the photoelectric conversion unit 12 in the same pixel 1.
  • the other semiconductor region 20 in the substrate 11 includes, for example, a floating diffusion portion FD described later (see FIG. 16).
  • the groove 21 is provided in the substrate 11 and the insulating layer 31, and penetrates the substrate 11 and the insulating layer 31.
  • Each groove 21 is provided in the substrate 11 between the photoelectric conversion unit 12 and the memory unit 16 adjacent to each other.
  • Each groove 21 shown in FIG. 2 is provided between the photoelectric conversion unit 12 and the memory unit 16 in different pixels 1, but each groove 21 of the present embodiment has the photoelectric conversion unit 12 in the same pixel 1. It may be provided between the memory unit 16 and the memory unit 16.
  • the groove 21 is formed, for example, by forming a recess in the substrate 11 from the surface S1 side of the substrate 11 by dry etching. Therefore, the width of the groove 21 of the present embodiment in the X direction becomes narrower from the front surface S1 side to the back surface S2 side of the substrate.
  • the groove 21 of the present embodiment has a shape extending in the Y direction and the Z direction.
  • the insulating film 22 and the light-shielding film 23 are sequentially formed in each groove 21. Specifically, the insulating film 22 is formed on the side surface of the substrate 11 and the insulating layer 31 in each groove 21, and the light-shielding film 23 is embedded in each groove 21 via the insulating film 22.
  • the insulating film 22 is, for example, a silicon oxide film (SiO 2 film) formed by oxidizing the substrate 11 and the insulating layer 31.
  • the light-shielding film 23 is a film containing a metal element such as tungsten (W), aluminum (Al), or copper (Cu), and has an effect of blocking light.
  • the shape of the light-shielding film 23 of this embodiment is almost the same as the shape of the groove 21. Therefore, the width of the light-shielding film 23 of the present embodiment in the X direction becomes narrower from the front surface S1 side to the back surface S2 side of the substrate. Further, the light-shielding film 23 of the present embodiment has a shape extending in the Y direction and the Z direction.
  • the reference numeral W shown in FIG. 2 indicates the width of the light-shielding film 23 in the X direction.
  • the shapes of the groove 21, the insulating film 22, and the light-shielding film 23 are also shown in FIG. FIG.
  • FIG 3 shows, as an example of the width W of the light-shielding film 23, the width W1 of the light-shielding film 23 near the lower end of the light-shielding film 23 and the width W2 of the light-shielding film 23 near the upper end of the light-shielding film 23 (W2 ⁇ . W1).
  • the groove 24 is provided in the substrate 11 and does not penetrate the substrate 11. Each groove 24 is provided in the substrate 11 between the photoelectric conversion unit 12 and the memory unit 16 adjacent to each other.
  • the groove 24 shown in FIG. 2 is provided between the photoelectric conversion unit 12 and the memory unit 16 in the same pixel 1, but each groove 24 of the present embodiment has a photoelectric conversion unit 12 in different pixels 1. It may be provided between the memory unit 16 and the memory unit 16.
  • the groove 24 is formed, for example, by forming a recess in the substrate 11 from the back surface S2 side of the substrate 11 by dry etching. Therefore, the width of the groove 24 of the present embodiment in the X direction becomes wider from the front surface S1 side to the back surface S2 side of the substrate.
  • the groove 24 of the present embodiment has a shape extending in the Y direction and the Z direction. When forming the groove 24, for example, the groove 24 is formed from the back surface side S2 of the substrate 11 into the substrate 11 by the above-mentioned dry etching so as not to penetrate the substrate 11.
  • the first insulating film 25, the second insulating film 26, and the light-shielding film 27 are sequentially formed in the back surface S2 of the substrate 11 and in each groove 24 of the substrate 11. Specifically, the first insulating film 25 and the second insulating film 26 are sequentially formed on the side surface and the bottom surface of the substrate 11 in each groove 24, and the light-shielding film 27 is a first insulating film in each groove 24. It is embedded via the 25 and the second insulating film 26. Further, the first insulating film 25, the second insulating film 26, and the light-shielding film 27 are sequentially laminated on the back surface S2 of the substrate 11 outside the groove 24.
  • the first insulating film 25 and the second insulating film 26 have an opening on the light-shielding film 23, and the light-shielding film 27 is embedded in the opening. Therefore, the light-shielding film 27 is in contact with the light-shielding film 23 within this opening.
  • the shapes of the first insulating film 25, the second insulating film 26, and the light-shielding film 27 are also shown in FIG.
  • the first insulating film 25 is, for example, a fixed charge film having a negative fixed charge.
  • the fixed charge film has an effect of suppressing the generation of noise called dark current due to minute defects existing at the interface of the substrate 11.
  • the fixed charge film is, for example, an oxide film or a nitride film containing a metal element such as hafnium (Hf), aluminum (Al), zirconium (Zr), tantalum (Ta), or titanium (Ti).
  • the second insulating film 26 is, for example, a silicon oxide film (SiO 2 film), a silicon nitride film (SiN film), a silicon nitride film (SiON film), or a resin film.
  • the first insulating film 25 and the second insulating film 26 are formed by, for example, ALD (Atomic Layer Deposition).
  • the light-shielding film 27 is a film containing a metal element such as tungsten (W), aluminum (Al), or copper (Cu), and has an effect of blocking light.
  • the shape of the light-shielding film 27 in the groove 24 of the present embodiment is substantially the same as the shape of the groove 24. Therefore, the width of the light-shielding film 27 of the present embodiment in the X direction becomes wider from the front surface S1 side to the back surface S2 side of the substrate. Further, the light-shielding film 27 of the present embodiment has a shape extending in the Y direction and the Z direction. On the other hand, the light-shielding film 27 outside the groove 24 of the present embodiment is provided at a position where it overlaps with the memory unit 16 in a plan view.
  • the flattening film 28 is formed on the substrate 11 via a first insulating film 25, a second insulating film 26, and a light-shielding film 27 so as to cover the back surface S2 of the substrate 11, whereby the back surface S2 of the substrate 11 is formed.
  • the upper surface is flat.
  • the flattening film 28 is, for example, an organic film such as a resin film.
  • the color filter 29 has a function of transmitting light having a predetermined wavelength, and is formed on the flattening film 28 for each pixel 1.
  • the color filters 29 for red (R), green (G), and blue (B) are arranged above the photoelectric conversion unit 12 of the red, green, and blue pixels 1, respectively.
  • the color filter 29 for infrared light may be arranged above the photoelectric conversion unit 12 of the infrared light pixel 1. The light transmitted through each color filter 29 is incident on the photoelectric conversion unit 12 via the flattening film 28.
  • the on-chip lens 30 has a function of condensing incident light, and is formed on the color filter 29 for each pixel 1.
  • the light collected by each on-chip lens 30 is incident on the photoelectric conversion unit 12 via the color filter 29 and the flattening film 28.
  • Each on-chip lens 30 of the present embodiment is made of a material through which light is transmitted, and the on-chip lenses 37 are connected to each other via this material.
  • the insulating layer 31 is formed on the surface S1 of the substrate 11 and functions as a gate insulating film of each pixel transistor.
  • FIG. 2 shows a cross section of the gate insulating film of the transfer transistor TRY, which will be described later (see FIG. 16).
  • the insulating layer 31 is, for example, a laminated film including a first insulating film 31a, a second insulating film 31b, and a third insulating film 31c laminated in order on the surface S1 of the substrate 11.
  • the first insulating film 31a is, for example, a silicon oxide film (SiO 2 film).
  • the second insulating film 31b is, for example, a silicon nitride film (SiN film).
  • the third insulating film 31c is, for example, a silicon oxide film (SiO 2 film).
  • the interlayer insulating film 32 is formed on the surface S1 of the substrate 11 so as to cover the insulating layer 31, the electrode layer 33, and the light-shielding film 34.
  • the interlayer insulating film 32 is, for example, a laminated film including a silicon oxide film (SiO 2 film) and another insulating film.
  • the electrode layer 33 is formed on the surface S1 of the substrate 11 via the insulating layer 31, and functions as a gate electrode of each pixel transistor.
  • FIG. 2 shows a cross section of the gate electrode of the transfer transistor TRY, which will be described later (see FIG. 16).
  • the electrode layer 33 is, for example, a polysilicon layer or a metal layer.
  • the light-shielding film 34 is formed on the surface S1 of the substrate 11 via the insulating layer 31 and the electrode layer 33, and is in contact with the electrode layer 33. Further, since the light-shielding film 23 penetrates the insulating layer 31 as described above, the light-shielding film 34 is in contact with the light-shielding film 23 on the lower surface of the light-shielding film 23. As a result, the light-shielding film 34 of the present embodiment is electrically connected to the light-shielding film 27 via the light-shielding film 23.
  • the light-shielding film 34 is a film containing a metal element such as tungsten (W), aluminum (Al), or copper (Cu), and has an effect of blocking light.
  • the light-shielding film 34 is formed in a different process from the light-shielding film 23 as described later in the present embodiment, the light-shielding film 34 may be formed in the same process as the light-shielding film 23.
  • the light-shielding film 23 and the light-shielding film 34 in this case are also examples of the first and second light-shielding films of the present disclosure, respectively.
  • the light-shielding film 27 outside the substrate 11 is formed in the same process as the light-shielding film 27 inside the substrate 11 in the present embodiment, but may be formed in a different process from the light-shielding film 27 inside the substrate 11.
  • the light-shielding film 27 inside the substrate 11 and the light-shielding film 27 outside the substrate 11 in this case are also examples of the third light-shielding film of the present disclosure.
  • the wiring layers 36 to 39 are sequentially provided on the surface S1 of the substrate 11 to form a multi-layer wiring structure.
  • the wiring layers 36 to 39 are provided in the interlayer insulating film 32, and are arranged below the insulating layer 31, the electrode layer 33, and the light-shielding film 34.
  • the contact plug 35 electrically connects between the wiring layer 36 and the electrode layer 33, and between the wiring layer 36 and the light-shielding film 34.
  • the via plug 40 electrically connects between the wiring layers 36 to 39.
  • the multilayer wiring structure of the present embodiment includes four wiring layers 36 to 39, but may include three or less or five or more wiring layers. Each of the wiring layers 36 to 39 contains various wirings, and each pixel transistor is driven by using these wirings.
  • the support substrate 41 is provided on the surface S1 of the substrate 11 via an interlayer insulating film 32 or the like, and is provided to ensure the strength of the substrate 11.
  • the support substrate 41 is, for example, a semiconductor substrate such as a silicon (Si) substrate.
  • the layer 42 includes an insulating layer 31, an interlayer insulating film 32, an electrode layer 33, a light-shielding film 34, a contact plug 35, wiring layers 36 to 39, and a via plug 40.
  • the layer 42 of the present embodiment is a multi-layer wiring layer including a multi-layer wiring structure formed by the wiring layers 36 to 39.
  • the light incident on the on-chip lens 30 is collected by the on-chip lens 30, passes through the color filter 29, and is incident on the photoelectric conversion unit 12.
  • the photoelectric conversion unit 12 converts this light into an electric charge by photoelectric conversion to generate a signal charge.
  • the signal charge is output as a pixel signal via the vertical signal line 8 in the wiring layers 36 to 39.
  • FIG. 4 is a cross-sectional view showing the structure of the solid-state image sensor of the comparative example.
  • FIG. 4 shows a vertical cross section of the pixel array region 2 of FIG. 1, specifically, shows a vertical cross section of three pixels 1 in the pixel array region 2.
  • FIG. 5 is also referred to as appropriate.
  • FIG. 5 is an enlarged cross-sectional view showing the structure of the solid-state image sensor of this comparative example.
  • the groove 21 of this comparative example is formed in the substrate 11 from the back surface S2 side of the substrate 11 and is filled with the first insulating film 25, the second insulating film 26, and the light-shielding film 27. There is. Further, the groove 21 of this comparative example penetrates the substrate 11, but does not penetrate the insulating layer 31. Specifically, as shown in FIG. 5, the groove 21 of this comparative example reaches the second insulating film 31b but does not reach the third insulating film 31c, and as a result, the light-shielding film 34 Not in contact with.
  • the solid-state image sensor of the first embodiment is compared with the solid-state image sensor of this comparative example.
  • the solid-state image sensor is used between the portion where the SiN break occurs and the portion where the SiN break does not occur. Variations in white characteristics will occur.
  • the insulating film covering the side surface of the groove 21 of this comparative example is the first insulating film 25 and the second insulating film 26 formed by ALD, it is difficult to thin the insulating film covering the side surface of the groove 21. It becomes a problem. As a result, it becomes necessary to increase the size of the groove 21 and reduce the size of the photoelectric conversion unit 12, and the amount of saturation signal decreases.
  • the groove 21 of this comparative example penetrates the insulating layer 31, the following problems occur.
  • the groove 21 is formed in the substrate 11 from the back surface S2 side of the substrate 11.
  • the groove 21 penetrates the insulating layer 31 and reaches the light-shielding film 34, the light-shielding film 34 is exposed to the chemical solution when the inside of the groove 21 is treated with a chemical solution such as a thermal phosphoric acid aqueous solution. ..
  • a chemical solution such as a thermal phosphoric acid aqueous solution. ..
  • the groove 21 of this comparative example is formed so as not to penetrate the insulating layer 31.
  • the groove 21 of the present embodiment penetrates the substrate 11 and the insulating layer 31, as shown in FIGS. 2 and 3, the light-shielding film 23 in the groove 21 and the surface S1 of the substrate 11 are shielded from light. There is no gap between the film 34 and the film 34 where the light-shielding film does not exist. Therefore, it is possible to suppress the phenomenon that light enters the memory unit 16 through the gap. Further, since each groove 21 is formed so as to penetrate the second insulating film 31b, it is possible to suppress variations in white characteristics due to SiN break.
  • the insulating film covering the side surface of the groove 21 of the present embodiment is the insulating film 22 formed by oxidation, the insulating film covering the side surface of the groove 21 can be easily thinned. Further, since the first insulating film 25 and the second insulating film 26 of the present embodiment do not need to be formed in the groove 21, the first insulating film 25 and the second insulating film 26 do not consider the size of the groove 21. It is possible to adjust the film thickness of.
  • the groove 21 is formed in the substrate 11 from the surface S1 side of the substrate 11 before the light-shielding film 34 is formed on the surface S1 of the substrate 11. Therefore, when the inside of the groove 21 is treated with a chemical solution such as a hot phosphoric acid aqueous solution, the light-shielding film 34 does not yet exist, so that the light-shielding film 34 is not exposed to the chemical solution. This makes it possible to avoid the problem that the light-shielding film 34 is damaged by the chemical solution.
  • a chemical solution such as a hot phosphoric acid aqueous solution
  • the present embodiment it is possible to suppress the formation of a gap between the light-shielding film 23 and the light-shielding film 34, and it is possible to form a suitable light-shielding film.
  • 6 to 11 are cross-sectional views showing a method of manufacturing the solid-state image sensor of the first embodiment.
  • each groove 21 is formed in the substrate 11 from the surface S1 side of the substrate 11, and is formed between the photoelectric conversion unit 12 and the memory unit 16 adjacent to each other.
  • the groove 21 of the present embodiment is formed so as not to penetrate the substrate 11 in the step B of FIG.
  • the insulating film 51 is formed on the entire surface of the substrate 11 (A in FIG. 7). As a result, the insulating film 51 is formed in the surface S1 of the substrate 11 and in the groove 21 of the substrate 11.
  • the insulating film 51 is, for example, a silicon nitride film (SiN film).
  • the insulating film 51 of the present embodiment is formed to recover the crystal defect damage of the substrate 11.
  • the insulating film 51 is removed from the substrate 11 using a chemical solution such as a hot phosphoric acid aqueous solution, and then the insulating layer 31 is formed on the surface S1 of the substrate 11 (B in FIG. 7).
  • the insulating layer 31 is formed by forming the first insulating film 31a, the second insulating film 31b, and the third insulating film 31c in this order on the surface S1 of the substrate 11 (see FIG. 3).
  • the insulating layer 31 of the present embodiment is not formed in the groove 21, and a structure in which the groove 21 exists in the substrate 11 and the insulating layer 31 is realized.
  • the insulating film 22 and the light-shielding film 23 are sequentially formed in each groove 21 (A in FIG. 8). Specifically, an insulating film 22 is formed on the side surface and the bottom surface of each groove 21, and the light-shielding film 23 is embedded in each groove 21 via the insulating film 22.
  • the insulating film 22 is formed, for example, by oxidizing the side surface and the bottom surface of each groove 21. In this way, the light-shielding film 23 is formed between the photoelectric conversion unit 12 and the memory unit 16 adjacent to each other.
  • the electrode layer 33 is formed on the surface S1 of the substrate 11 via the insulating layer 31, and the light-shielding film 34 is formed on the surface S1 of the substrate 11 via the insulating layer 31 and the electrode layer 33 (B in FIG. 8). .. In this way, the transfer transistor TRY and other pixel transistors are formed on the surface S1 of the substrate 11 (see FIG. 16).
  • the light-shielding film 34 of the present embodiment is formed so as to be in contact with the electrode layer 33 and the light-shielding film 23.
  • the light-shielding film 23 is formed by the step shown in FIG. 8A
  • the light-shielding film 34 is formed by the step shown in FIG. 8B. Instead, both the light-shielding films 23 and 34 are formed. It may be formed after the electrode layer 33 is formed in the step shown in FIG. 8B.
  • the interlayer insulating film 32, the contact plug 35, the wiring layers 36 to 39, and the via plug 40 are formed on the surface S1 of the substrate 11 (A in FIG. 9).
  • the step shown in FIG. 9A is formed, for example, by alternately forming the interlayer insulating film 32 and the wiring layers 36 to 39 on the surface S1 of the substrate 11.
  • the substrate 11 is turned upside down (B in FIG. 9). As a result, the front surface S1 of the substrate 11 faces downward, and the back surface S2 of the substrate 11 faces upward.
  • the above-mentioned support substrate 41 may be adhered to the surface S1 of the substrate 11 via an interlayer insulating film 32 or the like immediately before the step shown in FIG. 9B is performed.
  • the substrate 11 is thinned from the back surface S2 (A in FIG. 10).
  • the back surface S2 of the substrate 11 is lowered to the groove 21, the insulating film 22 is removed from the bottom surface of the groove 21, and the light-shielding film 23 is exposed on the back surface S2 of the substrate 11.
  • the groove 21 and the light-shielding film 23 are processed into a shape that penetrates the substrate 11 and the insulating layer 31.
  • a plurality of grooves 24 are formed in the substrate 11 (B in FIG. 10).
  • B in FIG. 10 shows one of these plurality of grooves 24.
  • Each groove 24 is formed in the substrate 11 from the back surface S2 side of the substrate 11, and is formed between the photoelectric conversion unit 12 and the memory unit 16 adjacent to each other.
  • the groove 24 of the present embodiment is formed so as not to penetrate the substrate 11.
  • the first insulating film 25, the second insulating film 26, and the light-shielding film 27 are sequentially formed in the back surface S2 of the substrate 11 and in each groove 24 of the substrate 11 (A in FIG. 11). Specifically, the first insulating film 25 and the second insulating film 26 are sequentially formed on the side surface and the bottom surface of each groove 24, and a light-shielding film is formed in each groove 24 via the first insulating film 25 and the second insulating film 26. 27 is embedded. At the same time, the first insulating film 25, the second insulating film 26, and the light-shielding film 27 are sequentially laminated on the back surface S2 of the substrate 11 outside the groove 24. In this way, the light-shielding film 27 is formed between the photoelectric conversion unit 12 and the memory unit 16 adjacent to each other.
  • the first insulating film 25 and the second insulating film 26 are formed by, for example, ALD.
  • an opening penetrating the first insulating film 25 and the second insulating film 26 is formed on the light-shielding film 23 by etching, and the light-shielding film 23 is exposed in the opening, and then the second insulating film 23 is exposed.
  • a light-shielding film 27 is formed on the insulating film 26.
  • the light-shielding film 27 is formed so as to be in contact with the light-shielding film 23 within this opening.
  • the light-shielding film 27 inside the substrate 11 and the light-shielding film 27 outside the substrate 11 are formed in the same step, but instead, the step of forming the light-shielding film 27 inside the substrate 11 is executed. Therefore, the step of forming the light-shielding film 27 outside the substrate 11 may be executed thereafter.
  • a flattening film 28 is formed on the substrate 11 via the first insulating film 25, the second insulating film 26, and the light-shielding film 27 so as to cover the back surface S2 of the substrate 11 (B in FIG. 10). As a result, a flat surface is formed on the back surface S2 of the substrate 11.
  • the color filter 29 and the on-chip lens 30 shown in FIG. 2 are sequentially formed on the flattening film 28. In this way, the solid-state image sensor of the present embodiment is manufactured.
  • 12 to 15 are cross-sectional views showing a method of manufacturing a solid-state image sensor according to a modified example of the first embodiment. 12 to 15 will be described focusing on the differences from FIGS. 6 to 10, and the description of common points with FIGS. 6 to 10 will be omitted as appropriate.
  • the substrate 11 (A in FIG. 12).
  • the p + type semiconductor region 13, the n-type semiconductor region 14, and the p-type semiconductor region 15 of each photoelectric conversion unit 12, and the p + type semiconductor region 17, n-type semiconductor of each memory unit 16 A region 18, a p-type semiconductor region 19, another semiconductor region 20, and a first portion 21a of each groove 21 are formed (B in FIG. 12).
  • the first portion 21a of each groove 21 is formed in the substrate 11 from the surface S1 side of the substrate 11 and is formed between the photoelectric conversion unit 12 and the memory unit 16 adjacent to each other.
  • the first portion 21a of each groove 21 shown in FIG. 12B is formed so as not to penetrate the substrate 11 like each groove 21 shown in FIG. 6B, but from each groove 21 shown in FIG. 6B. Is also shallowly formed.
  • the first portion 21a is formed, for example, from the surface S1 side of the substrate 11 into the substrate 11 by dry etching. Therefore, the width of the first portion 21a in the X direction becomes narrower from the front surface S1 side to the back surface S2 side of the substrate 11.
  • the steps shown in FIGS. 7A and 7B are executed to form the insulating layer 31 on the surface S1 of the substrate 11, and then the insulating film 22 and the light-shielding film 23 are formed in the first portion 21a of each groove 21. It is formed in order (A in FIG. 13). Further, the electrode layer 33 is formed on the surface S1 of the substrate 11 via the insulating layer 31, and the light-shielding film 34 is formed on the surface S1 of the substrate 11 via the insulating layer 31 and the electrode layer 33 (A in FIG. 13). The light-shielding film 34 of this modification is formed so as to be in contact with the electrode layer 33 and the light-shielding film 23, similarly to the light-shielding film 34 of the first embodiment.
  • the light-shielding film 34 of this modification is formed in the first portion 21a of each groove 21, the width of the light-shielding film 34 in the X direction becomes narrower from the front surface S1 side to the back surface S2 side of the substrate 11. It has become.
  • the light-shielding films 23 and 34 of this modification are examples of the first and second light-shielding films of the present disclosure, respectively.
  • the substrate 11 is thinned from the back surface S2 (A in FIG. 14). As a result, the back surface S2 of the substrate 11 is lowered to some extent, but the first portion 21a of the groove 21 is not lowered.
  • a plurality of grooves 24 and a second portion 21b of each groove 21 are formed in the substrate 11 (B in FIG. 14). B in FIG. 14 shows one of these plurality of grooves 24.
  • Each groove 24 is formed in the substrate 11 from the back surface S2 side of the substrate 11, and is formed between the photoelectric conversion unit 12 and the memory unit 16 adjacent to each other.
  • the groove 24 of this modification is formed so as not to penetrate the substrate 11 like the groove 24 of the first embodiment.
  • the groove 24 is formed, for example, from the back surface S2 side of the substrate 11 into the substrate 11 by dry etching. Therefore, the width of the groove 24 in the X direction becomes wider from the front surface S1 side to the back surface S2 side of the substrate 11.
  • each groove 21 is formed in the substrate 11 from the back surface S2 side of the substrate 11, and is formed between the photoelectric conversion unit 12 and the memory unit 16 adjacent to each other.
  • the second portion 21b of each groove 21 of this modification is formed so as to reach the corresponding first portion 21a.
  • each groove 21 includes the first portion 21a and the second portion 21b, and is processed into a shape that penetrates the inside of the substrate 11 and the inside of the insulating layer 31.
  • the second portion 21b is formed, for example, from the back surface S2 side of the substrate 11 into the substrate 11 by dry etching. Therefore, the width of the second portion 21b in the X direction becomes wider from the front surface S1 side to the back surface S2 side of the substrate 11.
  • the groove 21 of this modification is formed at substantially the same position as the groove 21 of the first embodiment, but the shape of the side surface of each groove 21 of this modification is different from the side surface of each groove 21 of the first embodiment. It has a different shape.
  • the groove 24 and the second portion 21b of the groove 21 may be formed at the same time or in order, but it is desirable that the grooves 24 and the second portion 21b are formed at the same time.
  • the depth of the first portion 21a of the groove 21 may be set so that the depth of the groove 24 and the depth of the second portion 21b are the same. desirable.
  • the insulating film 22 may or may not be removed from the bottom surface of the first portion 21a of each groove 21.
  • the first insulating film 25, the second insulating film 26, and the light-shielding film 27 are placed in the back surface S2 of the substrate 11, in each groove 24 of the substrate 11, and in the second portion 21b of each groove 21 of the substrate 11. It is formed in order (A in FIG. 15). Specifically, the first insulating film 25 and the second insulating film 26 are sequentially formed on the side surfaces and the bottom surface of each groove 24 and each second portion 21b, and the first insulation is formed in each groove 24 and each second portion 21b.
  • the light-shielding film 27 is embedded via the film 25 and the second insulating film 26.
  • the first insulating film 25, the second insulating film 26, and the light-shielding film 27 are sequentially laminated on the back surface S2 of the substrate 11 outside the groove 24.
  • the light-shielding film 27 is formed between the photoelectric conversion unit 12 and the memory unit 16 adjacent to each other in the groove 24 or the second portion 21b. Since the light-shielding film 27 of this modification is formed in each groove 24 and in each second portion 21b, the width of the light-shielding film 27 in the substrate 11 in the X direction is widened in each groove 24 as well in each second portion 21b. Even inside, it becomes wider as it goes from the front surface S1 side of the substrate 11 to the back surface S2 side.
  • the light-shielding film 27 of this modification is an example of the third light-shielding film of the present disclosure.
  • the light-shielding film 27 is formed on the second insulating film 26 without forming the opening penetrating the first insulating film 25 and the second insulating film 26 on the light-shielding film 23.
  • the light-shielding film 27 is formed so as not to come into contact with the light-shielding film 23.
  • an opening penetrating the first insulating film 25 and the second insulating film 26 may be formed on the light-shielding film 23, and then the light-shielding film 27 may be formed on the second insulating film 26. This opening is formed so as to penetrate the first insulating film 25 and the second insulating film 26 formed on the bottom surface of the second portion 21b.
  • this opening is formed in the groove 21.
  • the insulating film 22 is removed from the bottom surface of the first portion 21b when the second portion 21b is formed or the opening is formed, the light-shielding film 27 is formed so as to be in contact with the light-shielding film 23.
  • the flattening film 28 is formed on the substrate 11 via the first insulating film 25, the second insulating film 26, and the light-shielding film 27 (B in FIG. 15). After that, the color filter 29 and the on-chip lens 30 shown in FIG. 2 are sequentially formed on the flattening film 28. In this way, the solid-state image sensor of this modification is manufactured.
  • FIG. 16 is a plan view showing the structure of the solid-state image sensor of the first embodiment.
  • FIG. 16 schematically shows the planar structure of the four pixels 1 in the pixel array 2 of FIG.
  • the photoelectric conversion unit 12 and the memory unit 16 in each pixel 1 are adjacent to each other in the X direction.
  • the groove 21 and the groove 24 of the present embodiment are provided between the photoelectric conversion unit 12 and the memory unit 16 in the same pixel 1 and between the photoelectric conversion unit 12 and the memory unit 16 in different pixels 1. .. This is the same as the groove 21 and the groove 24 shown in FIG. FIG. 2 shows an XZ cross section along the AA'line shown in FIG.
  • FIG. 16 shows the transfer transistors TRG, TRX, and TRG of each pixel 1, the transfer transistor (emission transistor) OFG shared between the pixels 1, the reset transistor RST, the amplification transistor AMP, the selection transistor SEL, and the dummy transistor (Dummy). ) And. These pixel transistors are provided on the surface S1 of the substrate 11.
  • FIG. 16 further shows a floating diffusion unit FD shared between pixels 1 and another diffusion unit OFD. These diffusion portions are provided in the semiconductor region 20 in the substrate 11.
  • the grooves 21 and the grooves 24 of the present embodiment are arranged on a plurality of straight lines extending in the Y direction, and the grooves 21 and the grooves 24 are alternately arranged on each straight line. Therefore, on each straight line, the groove 21 and the groove 24 are connected to each other in the substrate 11. Details of such grooves 21 and 24 will be described with reference to FIG.
  • the arrangement of the grooves 21 and 24 shown in FIG. 16 may be the solid-state image sensor of the first embodiment shown in FIGS. 6 to 11 or the solid-state image sensor of the modified example of the first embodiment shown in FIGS. 12 to 15. It is common.
  • FIG. 17 is a cross-sectional view showing the structure of the solid-state image sensor of the first embodiment (A in FIG. 17) and the structure of the solid-state image sensor of the modified example of the first embodiment (B in FIG. 17). 17A and B show a YZ cross section along the BB'line shown in FIG.
  • the groove 21 penetrates the substrate 11 and the insulating layer 31, and the insulating film 22 and the light-shielding film 23 are formed in each groove 21. Further, in A of FIG. 17, the groove 24 does not penetrate the substrate 11, and the first insulating film 25, the second insulating film 26, and the light-shielding film 27 are formed in each groove 24.
  • the groove 21 and the groove 24 shown in A of FIG. 17 are connected to each other in the substrate 11.
  • the insulating film 22, the first insulating film 25, and the second insulating film 26 are interposed between the light-shielding film 23 in the groove 21 and the light-shielding film 27 in the groove 24.
  • the light-shielding film 23 of the present embodiment is in contact with the light-shielding film 27 outside the groove 24, not with the light-shielding film 27 inside the groove 24 (see FIG. 2).
  • the groove 21 penetrates the substrate 11 and the insulating layer 31, but not only the region including the insulating film 22 and the light-shielding film 23, but also the first insulating film 25, the second insulating film 26, and the insulating film 26. It also includes a region including the light-shielding film 27.
  • the former region is the first portion 21a and the latter region is the second portion 21b.
  • B shows the latter region (second portion 21b) with a broken line.
  • the groove 24 does not penetrate the substrate 11, and the first insulating film 25, the second insulating film 26, and the light-shielding film 27 are formed in each groove 24.
  • the groove 21 and the groove 24 shown in FIG. 17B are connected to each other at the points indicated by the broken lines in the substrate 11.
  • the insulating film 22, the first insulating film 25, and the first insulating film 25 are between the light-shielding film 23 in the first portion 21a of the groove 21 and the light-shielding film 27 in the second portion 21b of the groove 21 and in the groove 24.
  • 2 Insulating film 26 is interposed.
  • the insulating film 22, the first insulating film 25, and the second insulating film 26 are not interposed between the light-shielding film 27 in the second portion 21b of the groove 21 and the light-shielding film 27 in the groove 24. ..
  • the structure shown in A of FIG. 17 has an advantage that the groove 21 does not need to be formed separately from the first portion 21a and the second portion 21b, and the groove 21 can be easily formed.
  • it is generally required to align the position of the groove 21 in the Y direction with the position of the groove 24 in the Y direction with high accuracy.
  • the structure shown in FIG. 17B has an advantage that such alignment is not required.
  • the light-shielding film 21 in the substrate 11 and the light-shielding film 34 on the surface S1 of the substrate 11 are formed so as to be in contact with each other. Therefore, according to the present embodiment and its modifications, it is possible to form a suitable light-shielding film, such as suppressing the formation of a gap between the light-shielding film 23 and the light-shielding film 34. ..
  • FIG. 18 is a block diagram showing a configuration example of an electronic device.
  • the electrical device shown in FIG. 18 is a camera 100.
  • the camera 100 includes an optical unit 101 including a lens group and the like, an image pickup device 102 which is a solid-state image pickup device of the first embodiment, a DSP (Digital Signal Processor) circuit 103 which is a camera signal processing circuit, a frame memory 104, and the like. It includes a display unit 105, a recording unit 106, an operation unit 107, and a power supply unit 108. Further, the DSP circuit 103, the frame memory 104, the display unit 105, the recording unit 106, the operation unit 107, and the power supply unit 108 are connected to each other via the bus line 109.
  • DSP Digital Signal Processor
  • the optical unit 101 takes in incident light (image light) from the subject and forms an image on the image pickup surface of the image pickup device 102.
  • the image pickup apparatus 102 converts the amount of incident light imaged on the image pickup surface by the optical unit 101 into an electric signal in pixel units, and outputs the light amount as a pixel signal.
  • the DSP circuit 103 performs signal processing on the pixel signal output by the image pickup device 102.
  • the frame memory 104 is a memory for storing one screen of a moving image or a still image captured by the image pickup apparatus 102.
  • the display unit 105 includes a panel-type display device such as a liquid crystal panel or an organic EL panel, and displays a moving image or a still image captured by the image pickup device 102.
  • the recording unit 106 records a moving image or a still image captured by the image pickup apparatus 102 on a recording medium such as a hard disk or a semiconductor memory.
  • the operation unit 107 issues operation commands for various functions of the camera 100 under the operation of the user.
  • the power supply unit 108 appropriately supplies various power sources that serve as operating power sources for the DSP circuit 103, the frame memory 104, the display unit 105, the recording unit 106, and the operation unit 107 to these supply targets.
  • the solid-state image sensor can be applied to various other products.
  • the solid-state imaging device may be mounted on various moving objects such as automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility, airplanes, drones, ships, and robots.
  • FIG. 19 is a block diagram showing a configuration example of a mobile control system.
  • the mobile control system shown in FIG. 19 is a vehicle control system 200.
  • the vehicle control system 200 includes a plurality of electronic control units connected via the communication network 201.
  • the vehicle control system 200 includes a drive system control unit 210, a body system control unit 220, an outside information detection unit 230, an in-vehicle information detection unit 240, and an integrated control unit 250.
  • FIG. 19 further shows a microcomputer 251, an audio image output unit 252, and an in-vehicle network I / F (Interface) 253 as components of the integrated control unit 250.
  • the drive system control unit 210 controls the operation of the device related to the drive system of the vehicle according to various programs.
  • the drive system control unit 210 includes a driving force generator for generating a driving force of a vehicle such as an internal combustion engine and a driving motor, a driving force transmission mechanism for transmitting the driving force to wheels, and a steering wheel of the vehicle. It functions as a control device such as a steering mechanism that adjusts the angle and a braking device that generates braking force for the vehicle.
  • the body system control unit 220 controls the operation of various devices mounted on the vehicle body according to various programs.
  • the body system control unit 220 functions as a control device such as a smart key system, a keyless entry system, a power window device, and various lamps (for example, a headlamp, a back lamp, a brake lamp, a winker, and a fog lamp).
  • a radio wave transmitted from a portable device that substitutes for a key or a signal of various switches may be input to the body system control unit 220.
  • the body system control unit 220 receives such radio wave or signal input and controls a vehicle door lock device, a power window device, a lamp, and the like.
  • the outside information detection unit 230 detects information outside the vehicle equipped with the vehicle control system 200.
  • an image pickup unit 231 is connected to the vehicle outside information detection unit 230.
  • the vehicle outside information detection unit 230 causes the image pickup unit 231 to capture an image of the outside of the vehicle, and receives the captured image from the image pickup unit 231.
  • the vehicle outside information detection unit 230 may perform object detection processing or distance detection processing such as a person, a vehicle, an obstacle, a sign, or a character on a road surface based on the received image.
  • the image pickup unit 231 is an optical sensor that receives light and outputs an electric signal according to the amount of the light received.
  • the image pickup unit 231 can output an electric signal as an image or can output it as distance measurement information.
  • the light received by the image pickup unit 231 may be visible light or invisible light such as infrared light.
  • the image pickup unit 231 includes the solid-state image pickup device of the first embodiment.
  • the in-vehicle information detection unit 240 detects information inside the vehicle equipped with the vehicle control system 200.
  • a driver state detection unit 241 that detects the state of the driver is connected to the in-vehicle information detection unit 240.
  • the driver state detection unit 241 includes a camera that images the driver, and the in-vehicle information detection unit 240 has a degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 241. May be calculated, or it may be determined whether or not the driver has fallen asleep.
  • This camera may include the solid-state image sensor of the first embodiment, and may be, for example, the camera 100 shown in FIG.
  • the microcomputer 251 calculates a control target value of the driving force generator, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the information detection unit 230 outside the vehicle or the information inside the vehicle 240, and controls the drive system.
  • a control command can be output to the unit 210.
  • the microcomputer 251 is a coordinated control for the purpose of realizing ADAS (Advanced Driver Assistance System) functions such as vehicle collision avoidance, impact mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, collision warning, and lane deviation warning. It can be performed.
  • ADAS Advanced Driver Assistance System
  • the microcomputer 251 controls the driving force generator, the steering mechanism, or the braking device based on the information around the vehicle acquired by the vehicle exterior information detection unit 230 or the vehicle interior information detection unit 240, thereby controlling the driver. It is possible to perform coordinated control for the purpose of automatic driving that runs autonomously without depending on the operation.
  • the microcomputer 251 can output a control command to the body system control unit 220 based on the information outside the vehicle acquired by the vehicle outside information detection unit 230.
  • the microcomputer 251 controls the headlamps according to the position of the preceding vehicle or the oncoming vehicle detected by the outside information detection unit 230, and performs cooperative control for the purpose of anti-glare such as switching the high beam to the low beam. It can be carried out.
  • the audio image output unit 252 transmits an output signal of at least one of audio and image to an output device capable of visually or audibly notifying the passenger of the vehicle or the outside of the vehicle.
  • an audio speaker 261, a display unit 262, and an instrument panel 263 are shown as such an output device.
  • the display unit 262 may include, for example, an onboard display or a head-up display.
  • FIG. 20 is a plan view showing a specific example of the set position of the image pickup unit 231 of FIG.
  • the vehicle 300 shown in FIG. 20 includes image pickup units 301, 302, 303, 304, and 305 as image pickup units 231.
  • the image pickup units 301, 302, 303, 304, and 305 are provided, for example, at positions such as the front nose, side mirrors, rear bumpers, back doors, and the upper part of the windshield in the vehicle interior of the vehicle 300.
  • the image pickup unit 301 provided in the front nose mainly acquires an image in front of the vehicle 300.
  • the image pickup unit 302 provided in the left side mirror and the image pickup section 303 provided in the right side mirror mainly acquire an image of the side of the vehicle 300.
  • the image pickup unit 304 provided on the rear bumper or the back door mainly acquires an image of the rear of the vehicle 300.
  • the image pickup unit 305 provided on the upper part of the windshield in the vehicle interior mainly acquires an image in front of the vehicle 300.
  • the image pickup unit 305 is used, for example, to detect a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.
  • FIG. 20 shows an example of the imaging range of the imaging units 301, 302, 303, 304 (hereinafter referred to as “imaging unit 301 to 304”).
  • the imaging range 311 indicates the imaging range of the imaging unit 301 provided on the front nose.
  • the image pickup range 312 indicates the image pickup range of the image pickup unit 302 provided on the left side mirror.
  • the image pickup range 313 indicates the image pickup range of the image pickup unit 303 provided on the right side mirror.
  • the image pickup range 314 indicates the image pickup range of the image pickup unit 304 provided on the rear bumper or the back door.
  • the imaging range 311, 312, 313, 314 will be referred to as "imaging range 311 to 314".
  • At least one of the image pickup units 301 to 304 may have a function of acquiring distance information.
  • at least one of the image pickup units 301 to 304 may be a stereo camera including a plurality of image pickup devices, or may be an image pickup device having pixels for phase difference detection.
  • the microcomputer 251 (FIG. 19) is based on the distance information obtained from the imaging units 301 to 304, the distance to each three-dimensional object within the imaging range 311 to 314, and the temporal change of this distance (vehicle 300). Relative velocity to) is calculated. Based on these calculation results, the microcomputer 251 is the closest three-dimensional object on the traveling path of the vehicle 300, and is a three-dimensional object traveling at a predetermined speed (for example, 0 km / h or more) in almost the same direction as the vehicle 300. , Can be extracted as a preceding vehicle.
  • a predetermined speed for example, 0 km / h or more
  • the microcomputer 251 can set an inter-vehicle distance to be secured in front of the preceding vehicle in advance, and can perform automatic brake control (including follow-up stop control), automatic acceleration control (including follow-up start control), and the like. As described above, according to this example, it is possible to perform coordinated control for the purpose of automatic driving or the like that autonomously travels without the operation of the driver.
  • the microcomputer 251 classifies three-dimensional object data related to a three-dimensional object into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, electric poles, and other three-dimensional objects based on the distance information obtained from the imaging units 301 to 304. It can be extracted and used for automatic avoidance of obstacles. For example, the microcomputer 251 distinguishes obstacles around the vehicle 300 into obstacles that can be seen by the driver of the vehicle 300 and obstacles that are difficult to see. Then, the microcomputer 251 determines the collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or higher than the set value and there is a possibility of collision, the microcomputer 251 is used via the audio speaker 261 or the display unit 262. By outputting an alarm to the driver and performing forced deceleration and avoidance steering via the drive system control unit 210, driving support for collision avoidance can be provided.
  • At least one of the image pickup units 301 to 304 may be an infrared camera that detects infrared rays.
  • the microcomputer 251 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured images of the imaging units 301 to 304. Such recognition of a pedestrian is, for example, whether or not the pedestrian is a pedestrian by performing a procedure for extracting feature points in the captured images of the image pickup units 301 to 304 as an infrared camera and a pattern matching process on a series of feature points showing the outline of the object. It is performed by the procedure for determining.
  • the audio image output unit 252 When the microcomputer 251 determines that a pedestrian is present in the captured images of the imaging units 301 to 304 and recognizes the pedestrian, the audio image output unit 252 has a square contour line for emphasizing the recognized pedestrian.
  • the display unit 262 is controlled so as to superimpose and display. Further, the audio image output unit 252 may control the display unit 262 so as to display an icon or the like indicating a pedestrian at a desired position.
  • FIG. 21 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technique according to the present disclosure (the present technique) can be applied.
  • FIG. 21 illustrates how the surgeon (doctor) 531 is performing surgery on patient 532 on patient bed 533 using the endoscopic surgery system 400.
  • the endoscopic surgery system 400 includes an endoscope 500, other surgical tools 510 such as an abdominal tube 511 and an energy treatment tool 512, and a support arm device 520 that supports the endoscope 500.
  • a cart 600 equipped with various devices for endoscopic surgery.
  • the endoscope 500 is composed of a lens barrel 501 in which a region having a predetermined length from the tip is inserted into the body cavity of the patient 532, and a camera head 502 connected to the base end of the lens barrel 501.
  • the endoscope 500 configured as a so-called rigid mirror having a rigid lens barrel 501 is shown, but the endoscope 500 may be configured as a so-called flexible mirror having a flexible lens barrel. good.
  • An opening in which an objective lens is fitted is provided at the tip of the lens barrel 501.
  • a light source device 603 is connected to the endoscope 500, and the light generated by the light source device 603 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 501, and is an objective. It is irradiated toward the observation target in the body cavity of the patient 532 through the lens.
  • the endoscope 500 may be a direct endoscope, a perspective mirror, or a side endoscope.
  • An optical system and an image sensor are provided inside the camera head 502, and the reflected light (observation light) from the observation target is focused on the image sensor by the optical system.
  • the observation light is photoelectrically converted by the image pickup device, and an electric signal corresponding to the observation light, that is, an image signal corresponding to the observation image is generated.
  • the image signal is transmitted as RAW data to the camera control unit (CCU: Camera Control Unit) 601.
  • the CCU 601 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), and the like, and comprehensively controls the operations of the endoscope 500 and the display device 602. Further, the CCU 601 receives an image signal from the camera head 502, and performs various image processing on the image signal for displaying an image based on the image signal, such as a development process (demosaic process).
  • a development process demosaic process
  • the display device 602 displays an image based on the image signal processed by the CCU 601 under the control of the CCU 601.
  • the light source device 603 is composed of, for example, a light source such as an LED (Light Emitting Diode), and supplies irradiation light for photographing an operating part or the like to the endoscope 500.
  • a light source such as an LED (Light Emitting Diode)
  • LED Light Emitting Diode
  • the input device 604 is an input interface for the endoscopic surgery system 11000.
  • the user can input various information and input instructions to the endoscopic surgery system 400 via the input device 604.
  • the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) by the endoscope 500.
  • the treatment tool control device 605 controls the drive of the energy treatment tool 512 for cauterizing tissue, incising, sealing a blood vessel, or the like.
  • the pneumoperitoneum device 606 gas in the body cavity through the pneumoperitoneum tube 511 in order to inflate the body cavity of the patient 532 for the purpose of securing the field of view by the endoscope 500 and securing the work space of the operator. Is sent.
  • the recorder 607 is a device capable of recording various information related to surgery.
  • the printer 608 is a device capable of printing various information related to surgery in various formats such as text, images, and graphs.
  • the light source device 603 that supplies the irradiation light to the endoscope 500 when photographing the surgical site can be composed of, for example, an LED, a laser light source, or a white light source composed of a combination thereof.
  • a white light source is configured by a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high accuracy. Therefore, the light source device 603 adjusts the white balance of the captured image. It can be carried out.
  • the laser light from each of the RGB laser light sources is irradiated to the observation target in a time-division manner, and the drive of the image sensor of the camera head 502 is controlled in synchronization with the irradiation timing to correspond to each of RGB. It is also possible to capture the image in a time-division manner. According to this method, a color image can be obtained without providing a color filter in the image pickup device.
  • the drive of the light source device 603 may be controlled so as to change the intensity of the output light at predetermined time intervals.
  • the drive of the image sensor of the camera head 502 in synchronization with the timing of the change of the light intensity to acquire an image in time division and synthesizing the image, so-called high dynamic without blackout and overexposure. Range images can be generated.
  • the light source device 603 may be configured to be able to supply light in a predetermined wavelength band corresponding to special light observation.
  • special light observation for example, by utilizing the wavelength dependence of light absorption in body tissue, the surface layer of the mucous membrane is irradiated with light in a narrower band than the irradiation light (that is, white light) during normal observation.
  • a so-called narrow band imaging is performed in which a predetermined tissue such as a blood vessel is photographed with high contrast.
  • fluorescence observation may be performed in which an image is obtained by fluorescence generated by irradiating with excitation light.
  • the body tissue is irradiated with excitation light to observe the fluorescence from the body tissue (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally injected into the body tissue and the body tissue is injected. It is possible to obtain a fluorescence image by irradiating the excitation light corresponding to the fluorescence wavelength of the reagent.
  • the light source device 603 may be configured to be capable of supplying narrowband light and / or excitation light corresponding to such special light observation.
  • FIG. 22 is a block diagram showing an example of the functional configuration of the camera head 502 and CCU601 shown in FIG. 21.
  • the camera head 502 includes a lens unit 701, an image pickup unit 702, a drive unit 703, a communication unit 704, and a camera head control unit 705.
  • the CCU 601 has a communication unit 711, an image processing unit 712, and a control unit 713.
  • the camera head 502 and the CCU 601 are communicably connected to each other by a transmission cable 700.
  • the lens unit 701 is an optical system provided at a connection portion with the lens barrel 501.
  • the observation light taken in from the tip of the lens barrel 501 is guided to the camera head 502 and incident on the lens unit 701.
  • the lens unit 701 is configured by combining a plurality of lenses including a zoom lens and a focus lens.
  • the image pickup unit 702 is composed of an image pickup element.
  • the image pickup element constituting the image pickup unit 702 may be one (so-called single plate type) or a plurality (so-called multi-plate type).
  • each image pickup element may generate an image signal corresponding to each of RGB, and a color image may be obtained by synthesizing them.
  • the image pickup unit 702 may be configured to have a pair of image pickup elements for acquiring image signals for the right eye and the left eye corresponding to 3D (Dimensional) display, respectively.
  • the 3D display enables the operator 531 to more accurately grasp the depth of the living tissue in the surgical site.
  • a plurality of lens units 701 may be provided corresponding to each image pickup element.
  • the image pickup unit 702 is, for example, the solid-state image pickup device of the first embodiment.
  • the image pickup unit 702 does not necessarily have to be provided on the camera head 502.
  • the image pickup unit 702 may be provided inside the lens barrel 501 immediately after the objective lens.
  • the drive unit 703 is composed of an actuator, and the zoom lens and the focus lens of the lens unit 701 are moved by a predetermined distance along the optical axis under the control of the camera head control unit 705. As a result, the magnification and focus of the image captured by the image pickup unit 702 can be adjusted as appropriate.
  • the communication unit 704 is configured by a communication device for transmitting and receiving various information to and from the CCU 601.
  • the communication unit 704 transmits the image signal obtained from the image pickup unit 702 as RAW data to the CCU 601 via the transmission cable 700.
  • the communication unit 704 receives a control signal for controlling the drive of the camera head 502 from the CCU 601 and supplies the control signal to the camera head control unit 705.
  • the control signal includes, for example, information to specify the frame rate of the captured image, information to specify the exposure value at the time of imaging, and / or information to specify the magnification and focus of the captured image. Contains information about the condition.
  • the image pickup conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 713 of the CCU 601 based on the acquired image signal. good.
  • the endoscope 500 is equipped with a so-called AE (Auto Exposure) function, an AF (Auto Focus) function, and an AWB (Auto White Balance) function.
  • the camera head control unit 705 controls the drive of the camera head 502 based on the control signal from the CCU 601 received via the communication unit 704.
  • the communication unit 711 is composed of a communication device for transmitting and receiving various information to and from the camera head 502.
  • the communication unit 711 receives an image signal transmitted from the camera head 502 via the transmission cable 700.
  • the communication unit 711 transmits a control signal for controlling the drive of the camera head 502 to the camera head 502.
  • Image signals and control signals can be transmitted by telecommunications, optical communication, or the like.
  • the image processing unit 712 performs various image processing on the image signal which is the RAW data transmitted from the camera head 502.
  • the control unit 713 performs various controls related to the imaging of the surgical site and the like by the endoscope 500 and the display of the captured image obtained by the imaging of the surgical site and the like. For example, the control unit 713 generates a control signal for controlling the drive of the camera head 502.
  • control unit 713 causes the display device 602 to display an image captured by the surgical unit or the like based on the image signal processed by the image processing unit 712.
  • the control unit 713 may recognize various objects in the captured image by using various image recognition techniques.
  • the control unit 713 detects a surgical tool such as forceps, a specific biological part, bleeding, mist when using the energy treatment tool 512, etc. by detecting the shape, color, etc. of the edge of the object included in the captured image. Can be recognized.
  • the control unit 713 displays the captured image on the display device 602
  • the control unit 713 may superimpose and display various surgical support information on the image of the surgical unit by using the recognition result. By superimposing and displaying the surgery support information and presenting it to the surgeon 531 it is possible to reduce the burden on the surgeon 531 and to ensure that the surgeon 531 can proceed with the surgery.
  • the transmission cable 700 connecting the camera head 502 and the CCU 601 is an electric signal cable compatible with electric signal communication, an optical fiber compatible with optical communication, or a composite cable thereof.
  • the communication is performed by wire using the transmission cable 700, but the communication between the camera head 502 and the CCU 601 may be performed wirelessly.
  • a substrate having a first surface that is opposite to the light incident surface and a second surface that is the light incident surface.
  • a first pixel having a first photoelectric conversion unit and a first charge storage unit provided in the substrate, and A second pixel having a second photoelectric conversion unit and a second charge storage unit provided in the substrate, and A first light-shielding film provided between the second photoelectric conversion unit and the first charge storage unit adjacent to each other in the substrate.
  • a multilayer wiring layer provided on the first surface side of the substrate, and A second light-shielding film provided in the multilayer wiring layer and in contact with the first light-shielding film, and A solid-state image sensor.
  • the multilayer wiring layer includes an insulating layer provided on the first surface of the substrate.
  • a substrate having a first surface that is opposite to the light incident surface and a second surface that is the light incident surface.
  • a first pixel having a first photoelectric conversion unit and a first charge storage unit provided in the substrate, and A second pixel having a second photoelectric conversion unit and a second charge storage unit provided in the substrate, and A first groove that penetrates the substrate and is provided between the adjacent second photoelectric conversion unit and the first charge storage unit, and is provided on the first surface side in the substrate.
  • a first groove including a first portion and a second portion provided on the second surface side in the substrate.
  • the width of the first portion becomes narrower from the first surface side to the second surface side.
  • the width of the second portion becomes wider from the first surface side to the second surface side.
  • a substrate having a first surface opposite to the light incident surface and a second surface to be the light incident surface is prepared.
  • a first pixel having a first photoelectric conversion unit and a first charge storage unit is formed in the substrate.
  • a second pixel having a second photoelectric conversion unit and a second charge storage unit is formed in the substrate.
  • a first light-shielding film is formed between the adjacent second photoelectric conversion unit and the first charge storage unit.
  • a multilayer wiring layer is formed on the first surface side of the substrate, and the multilayer wiring layer is formed.
  • a second light-shielding film in contact with the first light-shielding film is formed in the multilayer wiring layer.
  • Pixel 2 Pixel array area 3: Control circuit, 4: Vertical drive circuit, 5: Column signal processing circuit, 6: Horizontal drive circuit, 7: Output circuit, 8: Vertical signal line, 9: Horizontal signal line, 11: Substrate, 12: Photoelectric conversion unit, 13: p + type semiconductor region, 14: n-type semiconductor region, 15: p-type semiconductor area, 16: memory unit, 17: p + type semiconductor area, 18: n-type semiconductor region, 19: p-type semiconductor region, 20: other semiconductor region, 21: groove, 21a: first part, 21b: second part, 22: insulating film, 23: light-shielding film, 24: groove, 25: first insulating film, 26: second insulating film, 27: light-shielding film, 28: Flattening film, 29: Color filter, 30: On-chip lens, 31: Insulation layer, 31a: First insulating film, 31b: Second insulating film, 31c: Third insulating film, 32: interlayer insulating film, 32:

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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Abstract

[Problème] Fournir un dispositif d'imagerie à semi-conducteur qui permet la formation d'un film de protection contre la lumière approprié, et un procédé de fabrication du dispositif d'imagerie à semi-conducteur. [Solution] Dispositif d'imagerie à semi-conducteur comprenant : un substrat qui a une première surface qui est la surface inverse à une surface incidente de lumière, et une seconde surface qui est une surface incidente de lumière ; un premier pixel qui a une première partie de stockage de charge et une première partie de conversion photoélectrique placées dans le substrat ; un second pixel qui a une seconde partie de stockage de charge et une seconde partie de conversion photoélectrique placées dans le substrat ; un premier film de protection contre la lumière qui est placé dans le substrat entre la seconde partie de conversion photoélectrique adjacente et la première partie de stockage de charge ; une couche de câblage multicouche qui est placée sur le premier côté de surface du substrat ; et un second film de protection contre la lumière qui est placé dans la couche de câblage multicouche et qui est en contact avec le premier film de protection contre la lumière.
PCT/JP2021/044167 2020-12-15 2021-12-01 Dispositif d'imagerie à semi-conducteur et son procédé de fabrication WO2022130987A1 (fr)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013065688A (ja) * 2011-09-16 2013-04-11 Sony Corp 固体撮像素子および製造方法、並びに電子機器
JP2018148116A (ja) * 2017-03-08 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、および電子機器
JP2018160485A (ja) * 2017-03-22 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
JP2018198272A (ja) * 2017-05-24 2018-12-13 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
WO2019130820A1 (fr) * 2017-12-26 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 Élément d'imagerie et dispositif d'imagerie
JP2020181947A (ja) * 2019-04-26 2020-11-05 キヤノン株式会社 光電変換装置、撮像システム、および、移動体

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013065688A (ja) * 2011-09-16 2013-04-11 Sony Corp 固体撮像素子および製造方法、並びに電子機器
JP2018148116A (ja) * 2017-03-08 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、および電子機器
JP2018160485A (ja) * 2017-03-22 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
JP2018198272A (ja) * 2017-05-24 2018-12-13 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
WO2019130820A1 (fr) * 2017-12-26 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 Élément d'imagerie et dispositif d'imagerie
JP2020181947A (ja) * 2019-04-26 2020-11-05 キヤノン株式会社 光電変換装置、撮像システム、および、移動体

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