WO2022130983A1

WO2022130983A1 - Electric power conversion device and elevator control panel

Info

Publication number: WO2022130983A1
Application number: PCT/JP2021/044123
Authority: WO
Inventors: 翔太佐藤; 雄太高橋; 淳史細川
Original assignee: 三菱電機株式会社
Priority date: 2020-12-15
Filing date: 2021-12-01
Publication date: 2022-06-23
Also published as: JPWO2022130983A1; CN116568622A

Abstract

In the present invention, the difference between the inductance of a first conductor unit (31) and the inductance of a second conductor unit (32) is equivalent to the difference between the inductance from the position in a first connection part (C1) at which a first terminal (T1) is connected to the position at which the first conductor unit (31) is connected and the inductance from the position in the first connection part (C1) at which the first terminal (T1) is connected to the position at which the second conductor unit (32) is connected. The second conductor unit (32) of a second electric power conversion circuit (12) is connected to the first connection part (C1) on the side of a first electric power conversion circuit (11) that is opposite from the first terminal (T1).

Description

Power converter and elevator control panel

This disclosure relates to a power conversion device and an elevator control panel.

Conventionally, there is a semiconductor element called a power semiconductor element. The power semiconductor element is, for example, a semiconductor element corresponding to a high voltage and a large current such as an insulated gate type bipolar transistor (IGBT: Insulated Gate Bipolar Transistor). In a power conversion device, a plurality of power semiconductor elements may be connected in parallel by a plurality of conductors. When the inductances of the plurality of conductors are different, it is difficult to pass a uniform current through the plurality of power semiconductor devices. When the current value of the current flowing through each of the plurality of power semiconductor elements is different, there is a high possibility that thermal destruction will occur in the power semiconductor element through which a large current flows. On the other hand, in order to suppress thermal destruction of a power semiconductor element, it is necessary to select the characteristics of the power semiconductor element. Further, it is necessary to use a power semiconductor element having a larger power capacity than necessary. Therefore, the manufacturing cost of the power conversion device may increase. In addition, the life may be biased among a plurality of power semiconductor devices.

The three-phase power conversion device (power conversion device) described in Japanese Patent No. 5557891 (Patent Document 1) includes a plurality of first semiconductor elements (first semiconductor module) and a plurality of second semiconductor elements (second semiconductor). A module), a first AC bus bar (first conductor unit), a second AC bus bar (second conductor unit), and an AC output terminal (first terminal). The AC output terminals are arranged at positions symmetrical with respect to each of the first bus bar and the second bus bar. Each of the first AC bus bar and the second AC bus bar has a shape symmetrical with respect to the AC output terminal. Each of the plurality of first semiconductor elements is connected to the first AC bus bar at a position symmetrical with respect to the AC output terminal. Each of the plurality of second semiconductor elements is connected to the second AC bus bar at a position symmetrical with respect to the AC output terminal. Therefore, the inductance from the AC output terminal to the plurality of first semiconductor elements and the inductance from the AC output terminal to the plurality of second semiconductor elements are equal.

Japanese Patent No. 5557891

However, in the power conversion device (three-phase power conversion device) described in the above publication, the first terminal (AC output terminal) is the first conductor unit (first AC bus bar) and the second conductor unit (second AC bus bar). ) Are arranged symmetrically with respect to each of them, so that the position where the first terminal is arranged is limited.

The present disclosure has been made in view of the above problems, and an object thereof is to make the inductance from the first terminal to the first semiconductor module equal to the inductance from the first terminal to the second semiconductor module, and the first terminal. It is an object of the present invention to provide a power conversion device and an elevator control panel that can suppress the limitation of the position where the module is arranged.

The power conversion device of the present disclosure includes a first terminal, a first connection portion, a first power conversion circuit, and a second power conversion circuit. The first connection portion is connected to the first terminal. The first power conversion circuit includes a first conductor unit and a first semiconductor module. The first conductor unit is connected to the first connecting portion. The first semiconductor module is connected to the first connection portion via the first conductor unit. The second power conversion circuit includes a second conductor unit and a second semiconductor module. The second conductor unit is connected to the first connecting portion. The second semiconductor module is connected to the first connection portion via the second conductor unit. The first semiconductor module and the second semiconductor module are electrically connected in parallel to the first terminal. The difference between the inductance of the first conductor unit and the inductance of the second conductor unit is the inductance from the position where the first terminal of the first connection part is connected to the position where the first conductor unit is connected and the inductance of the first connection part. It is equal to the difference from the inductance from the position where the first terminal is connected to the position where the second conductor unit is connected. The second conductor unit of the second power conversion circuit is connected to the first connection portion on the side opposite to the first terminal with respect to the first power conversion circuit.

According to the power conversion device of the present disclosure, the difference between the inductance of the first conductor unit and the inductance of the second conductor unit is that the first conductor unit is connected from the first position to which the first terminal of the first connection portion is connected. It is equal to the difference between the inductance to the second position and the inductance from the first position to which the first terminal of the first connection portion is connected to the third position to which the second conductor unit is connected. Therefore, the inductance of the first terminal to the first semiconductor module can be made equal to the inductance of the first terminal to the second semiconductor module. Further, the second conductor unit of the second power conversion circuit is connected to the first connection portion on the side opposite to the first terminal with respect to the first power conversion circuit. Therefore, the first terminal can be arranged at a position asymmetric with respect to the first semiconductor module of the first power conversion circuit and the second semiconductor module of the second power conversion circuit. Therefore, it is possible to prevent the position where the first terminal is arranged from being restricted.

It is a perspective view seen from the 1st connection part side which shows the structure of the power conversion apparatus which concerns on Embodiment 1. It is a perspective view schematically showing the structure of the 1st connection part and the 2nd connection part of the power conversion apparatus which concerns on Embodiment 1. FIG. It is a perspective view seen from the 1st power conversion circuit side which shows the structure of the power conversion apparatus which concerns on Embodiment 1. It is a perspective view seen from the 1st conductor unit side which shows the structure of the 1st power conversion circuit of the power conversion apparatus which concerns on Embodiment 1. It is a perspective view seen from the 1st semiconductor module side which shows the structure of the 1st power conversion circuit of the power conversion apparatus which concerns on Embodiment 1. It is a front view schematically showing the structure of the 1st conductor unit of the 1st power conversion circuit of the 1st power conversion apparatus which concerns on Embodiment 1. FIG. 6 is a cross-sectional view taken along the line VII-VII of FIG. It is a front view schematically showing the structure of the 3rd conductor unit of the 1st power conversion circuit of the power conversion apparatus which concerns on Embodiment 1. FIG. It is a bottom view schematically showing the structure of the 3rd conductor unit of the 1st power conversion circuit of the power conversion apparatus which concerns on Embodiment 1. FIG. It is a perspective view seen from the 2nd conductor unit side which shows the structure of the 2nd power conversion circuit of the power conversion apparatus which concerns on Embodiment 1. It is a perspective view seen from the 2nd semiconductor module side which shows the structure of the 2nd power conversion circuit of the power conversion apparatus which concerns on Embodiment 1. It is a front view schematically showing the structure of the 2nd conductor unit of the 2nd power conversion circuit of the power conversion apparatus which concerns on Embodiment 1. FIG. It is sectional drawing along the XIII-XIII line of FIG. It is a front view schematically showing the structure of the 4th conductor unit of the 2nd power conversion circuit of the power conversion apparatus which concerns on Embodiment 1. FIG. It is a bottom view schematically showing the structure of the 4th conductor unit of the 2nd power conversion circuit of the power conversion apparatus which concerns on Embodiment 1. FIG. It is a circuit diagram which shows schematic the structure of the power conversion apparatus which concerns on Embodiment 1. FIG. It is a perspective view which shows schematic structure of the cooler of the power conversion apparatus which concerns on Embodiment 1. FIG. It is a perspective view schematically showing the structure of the power conversion apparatus which concerns on Embodiment 2. FIG. It is a perspective view seen from the 5th conductor unit side which shows the structure of the 3rd power conversion circuit of the power conversion apparatus which concerns on Embodiment 2. It is a perspective view seen from the 5th semiconductor module side which schematically shows the structure of the 3rd power conversion circuit of the power conversion apparatus which concerns on Embodiment 2. FIG. It is a perspective view schematically showing the structure of the 1st connection part and the 2nd connection part of the power conversion apparatus which concerns on Embodiment 2. FIG. It is a front view schematically showing the structure of the 5th conductor unit of the 3rd power conversion circuit of the power conversion apparatus which concerns on Embodiment 2. FIG. 22 is a cross-sectional view taken along the line XXIII-XXIII of FIG. 22. It is a top view schematically showing the structure of the 6th conductor unit of the 3rd power conversion circuit of the power conversion apparatus which concerns on Embodiment 2. FIG. It is a bottom view schematically showing the structure of the 6th conductor unit of the 3rd power conversion circuit of the power conversion apparatus which concerns on Embodiment 2. FIG. It is a circuit diagram which shows schematic the structure of the power conversion apparatus which concerns on Embodiment 2. It is sectional drawing which shows schematic the structure of the elevator which concerns on Embodiment 3. FIG. It is a front view which shows schematically the structure of the elevator control panel which concerns on Embodiment 3, and does not show the 1st wiring part and the like. The configuration of the elevator control panel according to the third embodiment is schematically shown, and the first control board, the support plate, and the like are not shown in the front view. FIG. 8 is a cross-sectional view taken along the line XXX-XXX of FIG. 28. It is a perspective view schematically showing the structure of the power conversion apparatus which concerns on Embodiment 4. FIG. FIG. 3 is a cross-sectional view taken along the line XXXII-XXXII of FIG. 31. It is a rear view which shows schematic the structure of the power conversion apparatus which concerns on Embodiment 4. FIG. It is a perspective view schematically showing the structure of the power conversion apparatus which concerns on the modification of Embodiment 4.

Hereinafter, embodiments will be described with reference to the figures. In the following, the same or corresponding parts will be designated by the same reference numerals, and duplicate explanations will not be repeated.

Embodiment 1.
The configuration of the power conversion device 100 according to the first embodiment will be described with reference to FIGS. 1 to 17. The power conversion device 100 according to the present embodiment is configured as a three-phase power conversion device. Further, as will be described later, the three-phase power conversion device is applied to an elevator control panel used in an elevator. The power conversion device 100 includes a first terminal T1, a first connection portion C1, a first power conversion circuit 11, and a second power conversion circuit 12.

As shown in FIG. 1, the power conversion device 100 according to the present embodiment includes a second terminal T2, a second connection portion C2, a first capacitor board 61, a second capacitor board 62, and a first capacitor. It further includes a bus bar 71, a second condenser bus bar 72, and a cooler 8.

In the present embodiment, the first terminal T1 is configured as an input terminal. The second terminal T2 is arranged on the side opposite to the first terminal T1 with respect to the second power conversion circuit 12. The second terminal T2 is configured as an output terminal.

The first connection unit C1 is connected to the first terminal T1, the first power conversion circuit 11, and the second power conversion circuit 12. The first connection portion C1 is a common current path of the first power conversion circuit 11 and the second power conversion circuit 12. The first connection portion C1 is configured to supply the three-phase alternating current supplied from the main power supply PW to the first power conversion circuit 11 and the second power conversion circuit 12 via the reactor R and the first terminal T1. There is.

The second connection portion C2 is connected to the second terminal T2, the first power conversion circuit 11, and the second power conversion circuit 12. The second connection portion C2 is a common current path of the first power conversion circuit 11 and the second power conversion circuit 12. The second connection portion C2 is configured to supply the current converted by the first power conversion circuit 11 and the second power conversion circuit 12 to the prime mover M via the second terminal T2. The prime mover M is, for example, a motor.

In the present embodiment, the first connection portion C1 and the second connection portion C2 are, for example, bus bars. Each of the first connection portion C1 and the second connection portion C2 has a plate shape. Therefore, the first connection portion C1 and the second connection portion C2 can be manufactured by simple machining. In FIG. 1, each of the first connecting portion C1 and the second connecting portion C2 is composed of one member. Although not shown, each of the first connecting portion C1 and the second connecting portion C2 may be divided into a plurality of conductors. The material of the first connection portion C1 and the second connection portion C2 is a metal having high electric conductivity such as copper (Cu) and aluminum (Al).

More specifically, as shown in FIG. 2, the first connection portion C1 is provided with a first through hole TH1, a second through hole TH2, and a third through hole TH3. The second connection portion C2 is provided with a fourth through hole TH4, a fifth through hole TH5, and a sixth through hole TH6.

As shown in FIGS. 1 and 2, the first connection portion C1 is connected to the first terminal T1 by inserting the first terminal T1 into the first through hole TH1. The first connection portion C1 is fixed to the first power conversion circuit 11 by the first fixture F1 inserted into the second through hole TH2. The first connection portion C1 is fixed to the second power conversion circuit 12 by the second fixture F2 inserted into the third through hole TH3.

The second connection portion C2 is connected to the second terminal T2 by inserting the second terminal T2 into the fourth through hole TH4. The second connection portion C2 is fixed to the first power conversion circuit 11 by the third fixture F3 inserted into the fifth through hole TH5. The second connection portion C2 is fixed to the second power conversion circuit 12 by the fourth fixture F4 inserted into the sixth through hole TH6. The first fixture F1 to the fourth fixture F4 are configured as terminals. The first fixing tool F1 to the fourth fixing tool F4 are, for example, screws.

The first power conversion circuit 11 and the second power conversion circuit 12 are electrically connected in parallel to the first terminal T1 and the second terminal T2. The first power conversion circuit 11 and the second power conversion circuit 12 are arranged so as to face each other at intervals.

As shown in FIGS. 1 and 3, the first power conversion circuit 11 includes a first semiconductor module 21, a first conductor unit 31, and a first insulating layer 41. The second power conversion circuit 12 includes a second semiconductor module 22, a second conductor unit 32, and a second insulating layer 42. Since each of the first semiconductor module 21 and the second semiconductor module 22 is arranged on the opposite side of the cooler 8 from each of the first conductor unit 31 and the second conductor unit 32, FIG. 1 It cannot be seen from the viewpoint of.

As shown in FIG. 3, the second semiconductor module 22 may have a configuration common to that of the first semiconductor module 21. Further, the second insulating layer 42 may have a structure common to that of the first insulating layer 41. That is, the second power conversion circuit 12 may have the same configuration as the first power conversion circuit 11 except for the configuration of the second conductor unit 32.

The first semiconductor module 21 and the second semiconductor module 22 are electrically connected in parallel to the first terminal T1. Further, the first semiconductor module 21 and the second semiconductor module 22 are electrically connected in parallel to the second terminal T2. The detailed configuration of the first semiconductor module 21 and the second semiconductor module 22 will be described later. The first semiconductor module 21 is connected to the first connecting portion C1 via the first conductor unit 31. The second semiconductor module 22 is connected to the first connecting portion C1 via the second conductor unit 32.

As shown in FIG. 1, the first conductor unit 31 is connected to the first connecting portion C1. The first conductor unit 31 is connected to the first terminal T1 via the first connecting portion C1. The first conductor unit 31 is fixed to the first connection portion C1 by the first fixture F1.

The second conductor unit 32 is connected to the first connecting portion C1. The second conductor unit 32 is connected to the first terminal T1 via the first connecting portion C1. The second conductor unit 32 is fixed to the first connection portion C1 by the second fixture F2.

The second conductor unit 32 of the second power conversion circuit 12 is connected to the first connection portion C1 on the side opposite to the first terminal T1 with respect to the first power conversion circuit 11. Therefore, the length from the first position P1 to which the first terminal T1 of the first connecting portion C1 is connected to the third position P3 to which the second conductor unit 32 is connected is the first terminal of the first connecting portion C1. It is longer than the distance from the first position P1 to which T1 is connected to the second position P2 to which the first conductor unit 31 is connected. Further, the first conductor unit 31 and the second conductor unit 32 are arranged at positions asymmetric with respect to the first terminal T1.

As shown in FIGS. 1 and 2, in the present embodiment, the first position P1 to which the first terminal T1 of the first connection portion C1 is connected is the first of the outer edges of the first through hole TH1. 2 The position closest to the through hole TH2. Further, the second position P2 to which the first conductor unit 31 of the first connecting portion C1 is connected is the position closest to the first through hole TH1 among the outer edges of the second through hole TH2. Further, the third position P3 to which the second conductor unit 32 of the first connecting portion C1 is connected is the portion of the outer edge of the third through hole TH3 that is closest to the first through hole TH1.

As shown in FIG. 1, when the first terminal T1 is an input terminal, the second conductor unit 32 is connected to the first connection portion C1 on the downstream side of the current from the first power conversion circuit 11. Therefore, the inductance from the first position P1 to which the first terminal T1 of the first connecting portion C1 is connected to the third position P3 to which the second conductor unit 32 is connected is the first terminal T1 of the first connecting portion C1. Is larger than the inductance from the connected position to the second position P2 to which the first conductor unit 31 is connected.

Specifically, when the first terminal T1 is an input terminal, the current flowing through the first power conversion circuit 11 and the second power conversion circuit from the first position P1 to the second position P2 of the first connection portion C1. The current flowing through 12 is superimposed. Only the current flowing through the second power conversion circuit 12 flows from the second position P2 to the third position P3.

In the present embodiment, the inductance of the first conductor unit 31 becomes larger than the inductance of the second conductor unit 32, so that the inductance of the first connection portion C1 from the first position P1 to the third position P3 and the first connection are made. The difference from the inductance from the first position P1 to the second position P2 of the portion C1 is reduced. That is, the difference between the inductance of the first conductor unit 31 and the inductance of the second conductor unit 32 is that the first conductor unit 31 is connected from the first position P1 to which the first terminal T1 of the first connection portion C1 is connected. It is equal to the difference between the inductance to the second position P2 and the inductance from the first position P1 to which the first terminal T1 of the first connecting portion C1 is connected to the third position P3 to which the second conductor unit 32 is connected. In the present embodiment, the fact that the difference between the two inductances is equal also means that the two inductances are deviated by an error within a range of ± 10%.

In the present embodiment, the length of the first conductor unit 31 is longer than the length of the second conductor unit 32, so that the length from the first position P1 to the third position P3 of the first connecting portion C1 and the first one. The difference from the length of the connecting portion C1 from the first position P1 to the second position P2 is reduced. That is, the difference between the length of the first conductor unit 31 and the length of the second conductor unit 32 is that the first conductor unit 31 is connected from the first position P1 to which the first terminal T1 of the first connecting portion C1 is connected. It is equal to the difference between the length to the second position P2 and the length from the first position P1 to which the first terminal T1 of the first connecting portion C1 is connected to the third position P3 to which the second conductor unit 32 is connected. In the present embodiment, the fact that the difference between the two lengths is equal also means that the two lengths are deviated by an error within a range of ± 10%.

As shown in FIGS. 1 and 3, in the present embodiment, the first power conversion circuit 11 further includes a third semiconductor module 23, a third conductor unit 33, and a third insulating layer 43. .. The second power conversion circuit 12 further includes a fourth semiconductor module 24, a fourth conductor unit 34, and a fourth insulating layer 44.

The third semiconductor module 23 is connected to the first semiconductor module 21 via the first capacitor substrate 61. The fourth semiconductor module 24 is connected to the second semiconductor module 22 via the second capacitor substrate 62. The third semiconductor module 23 and the fourth semiconductor module 24 are electrically connected in parallel to the first terminal T1. The third semiconductor module 23 and the fourth semiconductor module 24 are electrically connected in parallel to the second terminal T2.

The third conductor unit 33 is connected to the first conductor unit 31 via the first semiconductor module 21. The third conductor unit 33 is connected to the first conductor unit 31 via the third semiconductor module 23, the first capacitor substrate 61, and the first semiconductor module 21.

The third conductor unit 33 is connected to the second connecting portion C2. The third conductor unit 33 is connected to the second terminal T2 via the second connecting portion C2. The third conductor unit 33 is fixed to the second connection portion C2 by the third fixture F3.

The fourth conductor unit 34 is connected to the second conductor unit 32 via the second semiconductor module 22. The fourth conductor unit 34 is connected to the second conductor unit 32 via the fourth semiconductor module 24, the second capacitor board 62, and the second semiconductor module 22.

The fourth conductor unit 34 is connected to the second connecting portion C2. The fourth conductor unit 34 is connected to the second terminal T2 via the second connecting portion C2. The fourth conductor unit 34 is fixed to the second connection portion C2 by the fourth fixture F4.

The third conductor unit 33 of the first power conversion circuit 11 is connected to the second connection portion C2 on the side opposite to the second terminal T2 with respect to the second power conversion circuit 12. When the first terminal T1 is an input terminal, the third conductor unit 33 is connected to the second connection portion C2 on the upstream side of the current from the fourth power conversion circuit 14.

The inductance from the 4th position P4 to which the 2nd terminal T2 of the 2nd connecting portion C2 is connected to the 5th position P5 to which the 3rd conductor unit 33 is connected is connected to the 2nd terminal T2 of the 2nd connecting portion C2. It is larger than the inductance from the 4th position P4 to the 6th position P6 to which the 4th conductor unit 34 is connected.

As shown in FIGS. 1 and 2, in the present embodiment, the fourth position P4 to which the second terminal T2 of the second connecting portion C2 is connected is the first of the outer edges of the fourth through hole TH4. 5 The position closest to the through hole TH5. Further, the fifth position P5 to which the third conductor unit 33 of the second connecting portion C2 is connected is the position closest to the fourth through hole TH4 among the outer edges of the fifth through hole TH5. Further, the sixth position P6 to which the fourth conductor unit 34 of the second connecting portion C2 is connected is the position closest to the fourth through hole TH4 among the outer edges of the sixth through hole TH6.

In the present embodiment, the inductance of the 4th conductor unit 34 becomes larger than the inductance of the 3rd conductor unit 33, so that the inductance from the 4th position P4 to the 5th position P5 of the 2nd connection portion C2 and the 2nd connection are made. The difference from the inductance from the fourth position P4 to the sixth position P6 of the portion C2 is reduced. That is, the difference between the inductance of the third conductor unit 33 and the inductance of the fourth conductor unit 34 is that the third conductor unit 33 is connected from the fourth position P4 to which the second terminal T2 of the second connecting portion C2 is connected. It is equal to the difference between the inductance up to the 5th position P5 and the inductance from the 4th position P4 to which the 2nd terminal T2 of the 2nd connection portion C2 is connected to the 6th position P6 to which the 4th conductor unit 34 is connected.

As shown in FIG. 1, in the present embodiment, the length from the fourth position P4 to the fifth position P5 of the second connection portion C2 is the length from the fourth position P4 to the sixth position P6 of the second connection portion C2. Longer than the length up to. In the present embodiment, the length of the fourth conductor unit 34 is longer than the length of the third conductor unit 33, so that the length from the fourth position P4 to the fifth position P5 of the second connecting portion C2 and the second The difference from the length of the connecting portion C2 from the fourth position P4 to the sixth position P6 is reduced. That is, the difference between the length of the third conductor unit 33 and the length of the fourth conductor unit 34 is that the third conductor unit 33 is connected from the fourth position P4 to which the second terminal T2 of the second connecting portion C2 is connected. It is equal to the difference between the length up to the fifth position P5 and the length from the fourth position P4 to which the second terminal T2 of the second connection portion C2 is connected to the sixth position P6 to which the fourth conductor unit 34 is connected.

The first conductor unit 31 is fixed to the cooler 8 via the first insulating layer 41. The second conductor unit 32 is fixed to the cooler 8 via the second insulating layer 42. The third conductor unit 33 is fixed to the cooler 8 via the third insulating layer 43. The fourth conductor unit 34 is fixed to the cooler 8 via the fourth insulating layer 44.

The material of the first insulating layer 41, the second insulating layer 42, the third insulating layer 43, and the fourth insulating layer 44 is, for example, a material having a polyphenylene sulfide (PPS) resin as a base material. The thermal conductivity of the materials of the first insulating layer 41, the second insulating layer 42, the third insulating layer 43, and the fourth insulating layer 44 is, for example, 1 W / mK or more and 5 W / mK or less. Further, each of the first insulating layer 41, the second insulating layer 42, the third insulating layer 43, and the fourth insulating layer 44 has a first conductor unit 31, a second conductor unit 32, a third conductor unit 33, and a fourth conductor. Each of the units 34 has an insulating performance capable of electrically insulating from the cooler 8.

Although not shown, each of the first insulating layer 41, the second insulating layer 42, the third insulating path and the fourth insulating layer 44, the first conductor unit 31, the second conductor unit 32, the third conductor unit 33 and the fourth conductor A thermal paste, a heat dissipation sheet, an adhesive, or the like may be inserted between each of the units 34. As a result, the contact thermal resistance is reduced, so that the heat dissipation is improved.

The first capacitor board 61 and the second capacitor board 62 are configured as, for example, smoothing capacitors. The first capacitor board 61 and the second capacitor board 62 include, for example, a printed circuit board and a plurality of electrolytic capacitors mounted in parallel on the printed circuit board. The first capacitor substrate 61 is fixed to the first semiconductor module 21 and the third semiconductor module 23, for example, by screwing. As a result, the first capacitor substrate 61 is electrically connected to the first semiconductor module 21 and the third semiconductor module 23. The second capacitor board 62 is fixed to the second semiconductor module 22 and the fourth semiconductor module 24, for example, by screwing. As a result, the second capacitor substrate 62 is electrically connected to the second semiconductor module 22 and the fourth semiconductor module 24.

Each of the first capacitor board 61 and the second capacitor board 62 includes a positive terminal and a negative terminal which are DC terminals for connecting to each other. The first capacitor bus bar 71 connects the positive terminal of the first capacitor board 61 and the positive terminal of the second capacitor board 62. The second capacitor bus bar 72 connects the negative terminal of the first capacitor board 61 and the negative terminal of the second capacitor board 62. As a result, the charge bias between the first power conversion circuit 11 and the second power conversion circuit 12 is leveled.

The fan F is configured to cool the cooler 8. A wind tunnel FT is provided on the side of the fan F. The wind tunnel FT is configured to guide the gas sucked or discharged by the fan F to the side opposite to the fan F. As a result, the first power conversion circuit 11 and the second power conversion circuit 12 can be cooled.

The cooler 8 includes a first cooling plate 811 and a second cooling plate 821. As shown in FIGS. 1 and 3, the first semiconductor module 21, the third semiconductor module 23, the first conductor unit 31, and the third conductor unit 33 are fixed to the first cooling plate 811 of the cooler 8. There is. A second semiconductor module 22, a fourth semiconductor module 24, a second conductor unit 32, and a fourth conductor unit 34 are fixed to the second cooling plate 821 of the cooler 8.

Although not shown, thermal paste or a heat dissipation sheet may be inserted between the cooler 8 and the first semiconductor module 21, the second semiconductor module 22, the third semiconductor module 23, and the fourth semiconductor module 24. The first semiconductor module 21, the second semiconductor module 22, the third semiconductor module 23, and the fourth semiconductor module 24 are fixed to the cooler 8 by sandwiching a thermal paste or a heat dissipation sheet (not shown).

Next, the configurations of the first conductor unit 31 to the fourth conductor unit 34 according to the first embodiment will be described in detail with reference to FIGS. 4 to 15. In the present embodiment, the first conductor unit 31 to the fourth conductor unit 34 are unitized. When a conductor unit is unitized, it means that the conductor unit is composed of a combination of a plurality of conductors. As will be described later, the plurality of conductors may be linear, curved, or bent.

As shown in FIGS. 4 to 7, the first conductor unit 31 of the first power conversion circuit 11 includes a plurality of first linear conductor portions 311, a plurality of first curved conductor portions 312, and a first bent conductor. It has a portion 313 and a first back conductor portion 314. The plurality of first linear conductor portions 311 are, for example, I-shaped. The plurality of first curved conductor portions 312 are longer than the plurality of first linear conductor portions 311. The plurality of first curved conductor portions 312 are, for example, U-shaped. The first connecting portion C1 is connected to the first bent conductor portion 313. The first bent conductor portion 313 is, for example, L-shaped. In FIG. 6, the number of the plurality of first linear conductor portions 311 and the number of the plurality of first curved conductor portions 312 are the same. The number of the plurality of first linear conductor portions 311 and the number of the plurality of first curved conductor portions 312 may be different. As shown in FIG. 7, the first back conductor portion 314 is arranged so as to sandwich the cooler 8. The first back conductor portion 314 is directly connected to the first semiconductor module 21. In the first conductor unit 31, the current flows in a meandering manner through the plurality of first curved conductor portions 312 and the plurality of first linear conductor portions 311.

As shown in FIG. 6, the plurality of first linear conductor portions 311 and the plurality of first curved conductor portions 312 are detachable from each other. In the present embodiment, the plurality of first linear conductor portions 311, the plurality of first curved conductor portions 312, the first bent conductor portion 313, and the first back surface conductor portion 314 are a plurality of first screws S1. Detachable from each other. Although not shown, the first insulating layer 41 is provided with a plurality of through holes through which each of the plurality of first screws S1 can penetrate. The first conductor unit 31 is fixed to the cooler 8 by a plurality of first screws S1. The first insulating layer 41 is fixed to the cooler 8 by a plurality of first insulating screws SS1.

As shown in FIG. 8, the third conductor unit 33 of the first power conversion circuit 11 has a plurality of third conductor portions 331, a third bent conductor portion 333, and a third back conductor portion 334. There is. The plurality of third conductor portions 331 are, for example, I-shaped (straight line). A second connecting portion C2 is connected to the third bent portion. The third bent conductor portion 333 is, for example, L-shaped. As shown in FIG. 9, the third back conductor portion 334 is arranged so as to sandwich the cooler 8. The third back conductor portion 334 is directly connected to the third semiconductor module 23.

As shown in FIG. 8, the plurality of third conductor portions 331 are detachable from each other. In the present embodiment, the third conductor portion 331, the third bent conductor portion 333, and the third back surface conductor portion 334 are detachable from each other by a plurality of third screws S3. Although not shown, the third insulating layer 43 is provided with a plurality of through holes through which each of the plurality of third screws S3 can penetrate. The third conductor unit 33 is fixed to the cooler 8 by a plurality of third screws S3. The third insulating layer 43 is fixed to the cooler 8 by a plurality of third insulating screws SS3.

As shown in FIGS. 10 to 13, the second conductor unit 32 has a plurality of second conductor portions 321, a second bent conductor portion 323, and a second back surface conductor portion 324. The plurality of second conductor portions 321 are, for example, I-shaped (straight line). A first connecting portion C1 is connected to the second bent portion. The second bent conductor portion 323 is, for example, L-shaped. As shown in FIG. 13, the second back conductor portion 324 is arranged so as to sandwich the cooler 8. The second back conductor portion 324 is directly connected to the second semiconductor module 22. Although not shown, the number of the second conductor units 32 included in the second conductor unit 32 may be one.

As shown in FIG. 12, the plurality of second conductor portions 321 are removable from each other. In the present embodiment, the second conductor portion 321 and the second bent conductor portion 323 and the second back surface conductor portion 324 are detachable from each other by a plurality of second screws S2. Although not shown, the second insulating layer 42 is provided with a plurality of through holes through which each of the plurality of second screws S2 can penetrate. The second conductor unit 32 is fixed to the cooler 8 by a plurality of second screws S2. The second insulating layer 42 is fixed to the cooler 8 by a plurality of second insulating screws SS2.

As shown in FIG. 14, the fourth conductor unit 34 includes a plurality of fourth linear conductor portions 341, a plurality of fourth curved conductor portions 342, a fourth bent conductor portion 343, and a fourth back surface conductor portion 344. And have. The plurality of fourth linear conductor portions 341 are, for example, I-shaped. The plurality of fourth curved conductor portions 342 are longer than the plurality of fourth linear conductor portions 341. The plurality of fourth curved conductor portions 342 are, for example, U-shaped. A second connecting portion C2 is connected to the fourth bent conductor portion 343. The fourth bent conductor portion 343 is, for example, L-shaped. As shown in FIG. 15, the fourth back conductor portion 344 is arranged so as to sandwich the cooler 8. The fourth back conductor portion 344 is directly connected to the fourth semiconductor module 24.

As shown in FIG. 14, the plurality of fourth linear conductor portions 341 and the plurality of fourth curved conductor portions 342 are removable from each other. In the present embodiment, the plurality of fourth linear conductor portions 341, the plurality of fourth curved conductor portions 342, the fourth bent conductor portion 343, and the fourth back surface conductor portion 344 are a plurality of fourth screws S4. Detachable from each other. Although not shown, the fourth insulating layer 44 is provided with a plurality of through holes through which each of the plurality of fourth screws S4 can penetrate. The fourth conductor unit 34 is fixed to the cooler 8 by a plurality of fourth screws S4. The fourth insulating layer 44 is fixed to the cooler 8 by a plurality of fourth insulating screws SS4.

As shown in FIGS. 4 and 10, the materials of the first conductor unit 31, the second conductor unit 32, the third conductor unit 33, and the fourth conductor unit 34 have a metal having high electric conductivity as a base material. is doing. The material of the first conductor unit 31, the second conductor unit 32, the third conductor unit 33, and the fourth conductor unit 34 is, for example, copper (Cu) or aluminum (Al). The thickness of the first conductor unit 31, the second conductor unit 32, the third conductor unit 33, and the fourth conductor unit 34 is, for example, 3.0 mm. Desirably, the thickness of each of the first conductor unit 31, the second conductor unit 32, the third conductor unit 33, and the fourth conductor unit 34 is uniform. Desirably, the widths of the first conductor unit 31, the second conductor unit 32, the third conductor unit 33, and the fourth conductor unit 34 are uniform. The first conductor unit 31, the second conductor unit 32, the third conductor unit 33, and the fourth conductor unit 34 are composed of plate-shaped members.

Next, the configuration of the power conversion device 100 according to the first embodiment as a three-phase power change device will be described in detail mainly with reference to FIGS. 1, 3, 6, 8, 12, and 14. ..

In the present embodiment, since the power conversion device 100 is configured as a three-phase power conversion circuit, the power conversion device 100 is electrically connected to each of the R phase, the S phase, and the T phase. Further, the power conversion device 100 is electrically connected to each of the U phase, the V phase, and the W phase. Each of the R phase, the S phase and the T phase is electrically connected to each of the U phase, the V phase and the W phase via the power conversion device 100.

As shown in FIG. 1, the first terminal T1 includes an R-phase first terminal portion T1R, an S-phase first terminal portion T1S, and a T-phase first terminal portion T1T. Each of the R phase first terminal portion T1R, the S phase first terminal portion T1S, and the T phase first terminal portion T1T is electrically connected to each of the R phase, the S phase, and the T phase.

The second terminal T2 includes a U-phase second terminal portion T2U, a V-phase second terminal portion T2V, and a W-phase second terminal portion T2W. Each of the U-phase second terminal portion T2U, the V-phase second terminal portion T2V, and the W-phase second terminal portion T2W is electrically connected to each of the U-phase, V-phase, and W-phase.

The first connection portion C1 includes an R phase first connection portion C1R, an S phase first connection portion C1S, and a T phase first connection portion C1T. Each of the R-phase first connection portion C1R, the S-phase first connection portion C1S, and the T-phase first connection portion C1T is connected to each of the R-phase first terminal portion T1R and the S-phase first terminal portion T1S, respectively. .. The R-phase first connection portion C1R, the S-phase first connection portion C1S, and the T-phase first connection portion C1T have the same shape.

The second connection portion C2 includes a U-phase second connection portion C2U, a V-phase second connection portion C2V, and a W-phase second connection portion C2W. Each of the U-phase second connection portion C2U, the V-phase second connection portion C2V, and the W-phase second connection portion C2W is connected to each of the U-phase second terminal portion T2U and the V-phase second terminal portion T2V, respectively. .. The U-phase second connection portion C2U, the V-phase second connection portion C2V, and the W-phase second connection portion C2W have the same shape as each other.

The first conductor unit 31 of the first power conversion circuit 11 includes an R-phase first conductor unit portion 31R, an S-phase first conductor unit portion 31S, and a T-phase first conductor unit portion 31T. Each of the R-phase first conductor unit portion 31R, the S-phase first conductor unit portion 31S, and the T-phase first conductor unit portion 31T has an R-phase first connection portion C1R, an S-phase first connection portion C1S, and a T-phase first. It is connected to each of the connection portions C1T.

As shown in FIG. 6, each of the R-phase first conductor unit portion 31R, the S-phase first conductor unit portion 31S, and the T-phase first conductor unit portion 31T has the above-mentioned plurality of first linear conductor portions 311. It has a plurality of first curved conductor portions 312, a first bent conductor portion 313, and a first back surface conductor portion 314. A plurality of first linear conductor portions 311 and a plurality of first curved conductor portions 312 of the R phase first conductor unit portion 31R, a plurality of first linear conductor portions 311 and a plurality of firsts of the S phase first conductor unit portion 31S. Each of the plurality of first linear conductor portions 311 and the plurality of first curved conductor portions 312 of the one curved conductor portion 312 and the T-phase first conductor unit portion 31T has the same shape as each other.

As shown in FIG. 3, the first semiconductor module 21 of the first power conversion circuit 11 includes an R-phase first semiconductor module section 21R, an S-phase first semiconductor module section 21S, and a T-phase first semiconductor module section 21T. I'm out. Each of the R-phase first semiconductor module section 21R, the S-phase first semiconductor module section 21S, and the T-phase first semiconductor module section 21T has an R-phase first conductor unit section 31R, an S-phase first conductor unit section 31S, and a T-phase. It is connected to each of the first conductor unit portions 31T.

The third conductor unit 33 of the first power conversion circuit 11 includes a U-phase third conductor unit 33U, a V-phase third conductor unit 33V, and a W-phase third conductor unit 33W. Each of the U-phase third conductor unit 33U, the V-phase third conductor unit 33V, and the W-phase third conductor unit 33W has a U-phase second connection portion C2U, a V-phase second connection portion C2V, and a W-phase second. It is connected to each of the connection portions C2W.

As shown in FIG. 8, each of the U-phase third conductor unit 33U, the V-phase third conductor unit 33V, and the W-phase third conductor unit 33W has the above-mentioned plurality of third conductor units 331 and the first. It has three bent conductor portions 333 and a third back surface conductor portion 334.

As shown in FIG. 3, the third semiconductor module 23 of the first power conversion circuit 11 includes a U-phase third semiconductor module section 23U, a V-phase third semiconductor module section 23V, and a W-phase third semiconductor module section 23W. I'm out. Each of the U-phase third semiconductor module section 23U, the V-phase third semiconductor module section 23V, and the W-phase third semiconductor module section 23W is connected to the R-phase first semiconductor module section 21R and the S-phase first via the first capacitor substrate 61. 1 It is connected to each of the semiconductor module section 21S and the T-phase first semiconductor module section 21T. Each of the U-phase third semiconductor module section 23U, the V-phase third semiconductor module section 23V, and the W-phase third semiconductor module section 23W is the U-phase third conductor unit section 33U, the V-phase third conductor unit section 33V, and the W-phase. It is connected to each of the third conductor unit portions 33W.

The second conductor unit 32 of the second power conversion circuit 12 includes an R-phase second conductor unit unit 32R, an S-phase second conductor unit unit 32S, and a T-phase second conductor unit unit 32T. Each of the R-phase second conductor unit portion 32R, the S-phase second conductor unit portion 32S, and the T-phase second conductor unit portion 32T has an R-phase first connection portion C1R, an S-phase first connection portion C1S, and a T-phase first. It is connected to each of the connection portions C1T.

The second semiconductor module 22 of the second power conversion circuit 12 includes an R-phase second semiconductor module unit 22R, an S-phase second semiconductor module unit 22S, and a T-phase second semiconductor module unit 22T. Each of the R-phase second semiconductor module unit 22R, the S-phase second semiconductor module unit 22S, and the T-phase second semiconductor module unit 22T has an R-phase second conductor unit unit 32R, an S-phase second conductor unit unit 32S, and a T-phase. It is connected to each of the second conductor unit portions 32T.

As shown in FIG. 12, each of the R-phase second conductor unit portion 32R, the S-phase second conductor unit portion 32S, and the T-phase second conductor unit portion 32T has the above-mentioned plurality of second conductor portions 321 and the first. It has two bent conductor portions 323 and a second back surface conductor portion 324.

The fourth conductor unit 34 of the second power conversion circuit 12 includes a U-phase fourth conductor unit portion 34U, a V-phase fourth conductor unit portion 34V, and a W-phase fourth conductor unit portion 34W. Each of the U-phase 4th conductor unit portion 34U, the V-phase 4th conductor unit portion 34V, and the W-phase 4th conductor unit portion 34W has a U-phase second connection portion C2U, a V-phase second connection portion C2V, and a W-phase second. It is connected to each of the connection portions C2W.

As shown in FIG. 14, each of the U-phase fourth conductor unit portion 34U, the V-phase fourth conductor unit portion 34V, and the W-phase fourth conductor unit portion 34W has the above-mentioned plurality of fourth linear conductor portions 341. It has a plurality of fourth curved conductor portions 342, a fourth bent conductor portion 343, and a fourth back surface conductor portion 344. A plurality of fourth linear conductor portions 341 and a plurality of fourth curved conductor portions 342 of the U-phase fourth conductor unit portion 34U, a plurality of fourth linear conductor portions 341 and a plurality of firsts of the V-phase fourth conductor unit portion 34V. Each of the plurality of fourth linear conductor portions 341 and the plurality of fourth curved conductor portions 342 of the four curved conductor portion 342 and the W phase fourth conductor unit portion 34W has the same shape as each other.

As shown in FIG. 3, the fourth semiconductor module 24 of the second power conversion circuit 12 includes a U-phase fourth semiconductor module section 24U, a V-phase fourth semiconductor module section 24V, and a W-phase fourth semiconductor module section 24W. I'm out. Each of the U-phase 4th semiconductor module section 24U, the V-phase 4th semiconductor module section 24V, and the W-phase 4th semiconductor module section 24W is connected to the R-phase second semiconductor module section 22R and the S-phase second via the second capacitor substrate 62. It is connected to each of the two semiconductor module portions 22S and the T-phase second semiconductor module portion 22T. The U-phase 4th semiconductor module unit 24U, the V-phase 4th semiconductor module unit 24V, and the W-phase 4th semiconductor module unit 24W are each U-phase 4th conductor unit unit 34U, V-phase 4th conductor unit unit 34V, and W-phase. It is connected to each of the fourth conductor unit portions 34W.

Next, the configuration and operation of the circuit of the power conversion device 100 according to the first embodiment will be described with reference to FIGS. 1 and 16. The power conversion device 100 is configured as a parallel circuit of the first power conversion circuit 11 and the second power conversion circuit 12.

As shown in FIG. 1, the power conversion device 100 according to the present embodiment is configured as a so-called multi-parallel circuit in which semiconductor elements electrically connected in parallel are further electrically connected in parallel. .. The first power conversion circuit 11 and the second power conversion circuit 12 are connected in parallel to the first terminal T1 and the second terminal T2.

As shown in FIG. 16, the R-phase first semiconductor module unit 21R of the first power conversion circuit 11 has two semiconductor elements SC connected in parallel to the first terminal T1. The R-phase second semiconductor module unit 22R has two semiconductor elements SC connected in parallel to the first terminal T1. The R-phase first semiconductor module unit 21R and the R-phase second semiconductor module unit 22R are connected in parallel to the first terminal T1.

The S-phase first semiconductor module unit 21S has two semiconductor elements SC connected in parallel to the first terminal T1. The S-phase second semiconductor module unit 22S has two semiconductor elements SC connected in parallel to the first terminal T1. The S-phase first semiconductor module unit 21S and the S-phase second semiconductor module unit 22S are connected in parallel to the first terminal T1.

The T-phase first semiconductor module unit 21T has two semiconductor elements SC connected in parallel to the first terminal T1. The T-phase second semiconductor module unit 22T has two semiconductor elements SC connected in parallel to the first terminal T1. The T-phase first semiconductor module unit 21T and the T-phase second semiconductor module unit 22T are connected in parallel to the first terminal T1.

The U-phase third semiconductor module unit 23U has two semiconductor elements SC connected in parallel to the second terminal T2. The U-phase fourth semiconductor module unit 24U has two semiconductor elements SC connected in parallel to the second terminal T2. The U-phase third semiconductor module unit 23U and the U-phase fourth semiconductor module unit 24U are connected in parallel to the second terminal T2.

The V-phase third semiconductor module unit 23V has two semiconductor elements SC connected in parallel to the second terminal T2. The V-phase fourth semiconductor module unit 24V has two semiconductor elements SC connected in parallel to the second terminal T2. The V-phase third semiconductor module unit 23V and the V-phase fourth semiconductor module unit 24V are connected in parallel to the second terminal T2.

The W-phase third semiconductor module unit 23W has two semiconductor elements SC connected in parallel to the second terminal T2. The W-phase fourth semiconductor module unit 24W has two semiconductor elements SC connected in parallel to the second terminal T2. The W-phase third semiconductor module unit 23W and the W-phase fourth semiconductor module unit 24W are connected in parallel to the second terminal T2.

From the above, the plurality of semiconductor element SCs of the first semiconductor module 21 and the second semiconductor module 22 according to the present embodiment are multi-parallelized.

The power conversion device 100 is configured to receive a three-phase alternating current from the main power supply PW. The three-phase alternating current flows through the reactor R to the power converter 100. The three-phase alternating current flows through each of the first power conversion circuit 11 and the second power conversion circuit 12. The waveform of the three-phase alternating current divided by each of the first power conversion circuit 11 and the second power conversion circuit 12 is converted. The three-phase AC current is converted into a direct current by each semiconductor element SC of the R-phase first semiconductor module section 21R, the S-phase first semiconductor module section 21S, and the T-phase first semiconductor module section 21T. That is, each semiconductor element SC of the R-phase first semiconductor module section 21R, the S-phase first semiconductor module section 21S, and the T-phase first semiconductor module section 21T is configured as a converter circuit. Further, the direct current is converted into an alternating current by each semiconductor element SC of the U-phase third semiconductor module unit 23U, the V-phase third semiconductor module unit 23V, and the W-phase third semiconductor module unit 23W. That is, each semiconductor element SC of the U-phase third semiconductor module section 23U, the V-phase third semiconductor module section 23V, and the W-phase third semiconductor module section 23W is configured as an inverter circuit. The currents converted by each of the first power conversion circuit 11 and the second power conversion circuit 12 merge. The combined current flows through the motor M.

Next, the configuration of the cooler 8 according to the first embodiment will be described in detail with reference to FIGS. 1 and 17. In FIG. 17, for convenience of explanation, the first power conversion circuit 11 and the second power conversion circuit 12 of the power conversion device 100 are not shown. As shown in FIG. 17, the cooler 8 further includes a plurality of first cooling pipes 812, a plurality of second cooling pipes 822, a plurality of first cooling fins 813 and a plurality of second cooling fins 823. The plurality of first cooling pipes 812 are partially embedded in the first cooling plate 811. Each of the plurality of first cooling pipes 812 projects from the inside to the outside of the first cooling plate 811. Each of the plurality of second cooling pipes 822 is partially embedded in the second cooling plate. Each of the plurality of second cooling pipes 822 projects from the inside of the second cooling plate 821 to the outside. Therefore, the heat transferred to the first cooling plate 811 and the second cooling plate 821 is efficiently transported by the plurality of first cooling pipes 812 and the second cooling pipe 822. Each of the plurality of first cooling pipes 812 and the plurality of second cooling pipes 822 is configured as a heat pipe. The inside of each of the plurality of first cooling pipes 812 and the plurality of second cooling pipes 822 is configured so that the refrigerant can flow.

As shown in FIGS. 1 and 17, the plurality of first cooling pipes 812 are configured to discharge the refrigerant from the third semiconductor module 23 side toward the first semiconductor module 21 side. The plurality of second cooling pipes 822 are configured to discharge the refrigerant from the fourth semiconductor module 24 side toward the second semiconductor module 22 side. In the present embodiment, the calorific value of the third semiconductor module 23 and the fourth semiconductor module 24 configured as the inverter is larger than the calorific value of the first semiconductor module 21 and the second semiconductor module 22 configured as the converter. Since the semiconductor module having a large calorific value is arranged on the upstream side of the cooling pipe, the semiconductor module having a large calorific value can be efficiently cooled by the refrigerant. Therefore, the cooler 8 can be miniaturized. Further, the number of the plurality of first cooling pipes 812 and the second cooling pipes 822 can be reduced. Therefore, the power conversion device 100 can be miniaturized and the manufacturing cost can be reduced.

Each of the plurality of first cooling fins 813 is fixed to the plurality of first cooling pipes 812 so as to intersect the plurality of first cooling pipes 812. Each of the plurality of first cooling fins 813 is thermally connected to the first cooling plate 811. Each of the plurality of second cooling fins 823 is fixed to the plurality of second cooling pipes 822 so as to intersect the plurality of second cooling pipes 822. Each of the plurality of second cooling fins 823 is thermally connected to the second cooling plate 821. Each of the plurality of first cooling fins 813 and the plurality of second cooling fins 823 are configured as heat radiation fins. Each of the plurality of first cooling fins 813 and the plurality of second cooling fins 823 are arranged inside the wind tunnel FT (see FIG. 5).

The material of the first cooling plate 811, the second cooling plate 821, the plurality of first cooling pipes 812, the plurality of second cooling pipes 822, the plurality of first cooling fins 813 and the plurality of second cooling fins 823 is, for example, aluminum. (Al).

Subsequently, the action and effect of the present embodiment will be described.
According to the power conversion device 100 according to the first embodiment, the difference between the inductance of the first conductor unit 31 and the inductance of the second conductor unit 32 is the first to which the first terminal T1 of the first connecting portion C1 is connected. The third position to which the second conductor unit 32 is connected from the first position P1 to which the inductance from the position P1 to the second position P2 to which the first conductor unit 31 is connected and the first terminal T1 of the first connection portion C1 are connected. Equal to the difference from the inductance up to position P3. Therefore, the inductance of the first terminal T1 to the first semiconductor module 21 and the inductance of the first terminal T1 to the second semiconductor module 22 can be made equal.

As shown in FIGS. 1 and 3, the second conductor unit 32 of the second power conversion circuit 12 is connected to the first connection portion C1 on the side opposite to the first terminal T1 with respect to the first power conversion circuit 11. Has been done. Therefore, the first terminal T1 can be arranged at a position asymmetric with respect to the first semiconductor module 21 of the first power conversion circuit 11 and the second semiconductor module 22 of the second power conversion circuit 12. Therefore, the first terminal T1 does not have to be arranged at a position symmetrical with respect to the first semiconductor module 21 of the first power conversion circuit 11 and the second semiconductor module 22 of the second power conversion circuit 12. Therefore, it is possible to prevent the position where the first terminal T1 is arranged from being restricted.

The operation and effect of the power conversion device 100 according to the present embodiment will be described in detail as compared with the power conversion device according to the comparative example. In the power conversion device according to the comparative example, the first terminal is arranged at a position symmetrical with respect to the first power conversion circuit and the second power conversion circuit. The power conversion device according to the comparative example includes the first semiconductor element to the fourth semiconductor element which are multi-parallelized as in the power conversion device 100 according to the present embodiment. The first semiconductor element and the second semiconductor element of the first semiconductor module are electrically connected in parallel with each other. Further, the third semiconductor element and the fourth semiconductor element of the second semiconductor module are electrically connected in parallel with each other.

In the power conversion device according to the comparative example, in order to make the inductances from the first terminal to the first semiconductor element to the fourth semiconductor element equal, the first terminal is the first semiconductor element and the second semiconductor element of the first semiconductor module. It should be placed in a position symmetrical to the relative. Further, it is necessary to arrange the first terminal at a position symmetrical with respect to the first semiconductor element and the second semiconductor element of the second semiconductor module. Further, it is necessary to arrange the first terminal at a position symmetrical with respect to the first semiconductor element of the first semiconductor module and the first semiconductor element of the second semiconductor module. Further, it is necessary to arrange the first terminal at a position symmetrical with respect to the second semiconductor element of the first semiconductor module and the second semiconductor element of the second semiconductor module. That is, if the first terminal is arranged at a position symmetric with respect to the first power conversion circuit and the second power conversion circuit, the first terminal is multiplex symmetric with respect to each of the first semiconductor element to the fourth semiconductor element. Need to be placed in. Therefore, the position where the first terminal is arranged is limited.

On the other hand, in the present embodiment, as shown in FIGS. 1 and 3, the second conductor unit 32 of the second power conversion circuit 12 has the first terminal T1 with respect to the first power conversion circuit 11. Is connected to the first connection portion C1 on the opposite side, so that the first terminal T1 is asymmetric with respect to the first semiconductor module 21 of the first power conversion circuit 11 and the second semiconductor module 22 of the second power conversion circuit 12. Can be placed in any position. Therefore, the first terminal T1 can be arranged at a position asymmetrical with respect to the plurality of semiconductor elements. Therefore, it is possible to prevent the position where the first terminal T1 is arranged from being restricted.

As shown in FIGS. 1 and 3, the difference between the length of the first conductor unit 31 and the length of the second conductor unit 32 is from the first position P1 to which the first terminal T1 of the first connecting portion C1 is connected. From the length to the second position P2 to which the first conductor unit 31 is connected and from the first position P1 to which the first terminal T1 of the first connection portion C1 is connected to the third position P3 to which the second conductor unit 32 is connected. Is equal to the difference from the length of. Therefore, by adjusting the lengths of the first conductor unit 31 and the second conductor unit 32, the inductance of the first terminal T1 to the first semiconductor module 21 and the inductance from the first terminal T1 to the second semiconductor module 22 can be obtained. Can be equal. Therefore, the inductance of the first terminal T1 to the first semiconductor module 21 and the inductance of the first terminal T1 to the second semiconductor module 22 can be easily equalized. Further, the impedance of the first terminal T1 to the first semiconductor module 21 and the impedance of the first terminal T1 to the second semiconductor module 22 can be easily equalized.

As shown in FIG. 6, the plurality of first linear conductor portions 311 and the plurality of first curved conductor portions 312 are detachable from each other. Therefore, the first conductor unit 31 can be composed of a plurality of first linear conductor portions 311 and a plurality of first curved conductor portions 312 which are detachable from each other. Therefore, it is easier to change the inductance and length of the first conductor unit 31 than when the first conductor unit 31 is composed of a single member. Therefore, the design of the first conductor unit 31 becomes easy. In addition, the productivity of the first conductor unit 31 is improved.

As shown in FIG. 8, the plurality of second conductor portions 321 are removable from each other. Therefore, the second conductor unit 32 can be configured by a plurality of second conductor portions 321 that can be attached to and detached from each other. Therefore, it is easier to change the inductance and length of the second conductor unit 32 than when the second conductor unit 32 is composed of a single member. Therefore, the design of the second conductor unit 32 becomes easy. In addition, the productivity of the second conductor unit 32 is improved.

As shown in FIG. 3, the first semiconductor module 21 and the first conductor unit 31 are fixed to the first cooling plate 811 of the cooler 8. Therefore, the first semiconductor module 21 and the first conductor unit 31 can be cooled by the first cooling plate 811.

As shown in FIG. 3, the second semiconductor module 22 and the second conductor unit 32 are fixed to the second cooling plate 821 of the cooler 8. Therefore, the second semiconductor module 22 and the second conductor unit 32 can be cooled by the second cooling plate 821.

As shown in FIGS. 1 and 3, the second terminal T2 is arranged on the side opposite to the first terminal T1 with respect to the second power conversion circuit 12. Therefore, the second terminal T2 can be arranged at a position asymmetric with respect to the first semiconductor module 21 of the first power conversion circuit 11 and the second semiconductor module 22 of the second power conversion circuit 12. Therefore, the second terminal T2 does not have to be arranged at a position symmetrical with respect to the first semiconductor module 21 of the first power conversion circuit 11 and the second semiconductor module 22 of the second power conversion circuit 12. Therefore, it is possible to prevent the position where the second terminal T2 is arranged from being restricted.

The difference between the inductance of the third conductor unit 33 and the inductance of the fourth conductor unit 34 is the fifth position to which the third conductor unit 33 is connected from the fourth position P4 to which the second terminal T2 of the second connecting portion C2 is connected. It is equal to the difference between the inductance up to the position P5 and the inductance from the 4th position P4 to which the 2nd terminal T2 of the 2nd connection portion C2 is connected to the 6th position P6 to which the 4th conductor unit 34 is connected. Therefore, the inductance of the second terminal T2 to the third semiconductor module 23 can be made equal to the inductance of the second terminal T2 to the fourth semiconductor module 24.

Since the inductance of the first terminal T1 to the first semiconductor module 21 and the inductance of the first terminal T1 to the second semiconductor module 22 can be made equal, the current value of the current flowing through the first semiconductor module 21 and the second semiconductor The current value of the current flowing through the module 22 can be equalized. As a result, abnormal heat generation of the first semiconductor module 21 and the second semiconductor module 22 can be suppressed. Further, it is possible to prevent the first semiconductor module 21 and the second semiconductor module 22 from becoming hot. Therefore, it is possible to prevent the product life of the power conversion device 100 from being shortened. Further, since it is possible to suppress excessive heat generation of the first semiconductor module 21 and the second semiconductor module 22, the cooler 8 can be miniaturized.

As shown in FIGS. 1 and 3, the first semiconductor module 21 and the first conductor unit 31 are fixed to the first cooling plate 811 of the cooler 8. Further, the second semiconductor module 22 and the second conductor unit 32 are fixed to the second cooling plate 821 of the cooler 8. Therefore, it is not necessary to provide a gap between each of the first conductor unit 31 and the second conductor unit 32 and each of the first cooling plate 811 and the second cooling plate 821.

If a gap is provided between each of the first conductor unit 31 and the second conductor unit 32 and each of the first cooling plate 811 and the second cooling plate 821, the first conductor unit 31 and the second conductor unit 32 are provided. Each of the above greatly blocks the air passage of the cooling gas flowing by the fan F. Therefore, the pressure loss of the cooling gas increases. Therefore, it is necessary to increase the fan F for sufficient cooling.

On the other hand, in the present embodiment, as shown in FIG. 1, between each of the first conductor unit 31 and the second conductor unit 32 and each of the first cooling plate 811 and the second cooling plate 821. It is not necessary to provide a gap for each. Therefore, it is possible to suppress an increase in the pressure loss of the cooling gas. Therefore, it is possible to suppress the increase in size of the fan F.

As shown in FIGS. 1 and 3, the first terminal T1 is arranged at a position symmetrical with respect to the first semiconductor module 21 of the first power conversion circuit 11 and the second semiconductor module 22 of the second power conversion circuit 12. Since it is not necessary, the first terminal T1 can be arranged on the side of the first power conversion circuit 11 and the second power conversion circuit 12.

If the first terminal T1 is arranged so as to protrude in front of the first power conversion circuit 11 and the second power conversion circuit 12, the main power supply PW is also in front of the first power conversion circuit 11 and the second power conversion circuit 12. Placed in. Therefore, the power conversion device 100 can be increased in size.

On the other hand, in the present embodiment, as shown in FIG. 1, since the first terminal T1 can be arranged on the side of the first power conversion circuit 11 and the second power conversion circuit 12, the main power supply The PW can also be arranged on the side of the first power conversion circuit 11 and the second power conversion circuit 12. Therefore, it is possible to suppress the increase in size of the power conversion device 100.

Embodiment 2.
Next, the configuration of the power conversion device 100 according to the second embodiment will be described with reference to FIGS. 18 to 26. The second embodiment has the same configuration and operation and effect as the first embodiment, unless otherwise specified. Therefore, the same components as those in the first embodiment are designated by the same reference numerals, and the description thereof will not be repeated.

As shown in FIG. 18, the power conversion device 100 according to the present embodiment further includes a third power conversion circuit 13 and a third capacitor board 63. The power conversion device 100 according to the present embodiment is different from the power conversion device 100 according to the first embodiment in that it has a capacity expanded by the third power conversion circuit 13. The first power conversion circuit 11, the second power conversion circuit 12, and the third power conversion circuit 13 include the first power conversion circuit 11, the third power conversion circuit 13, and the third power conversion circuit 13 from the first terminal T1 side toward the second terminal T2 side. The second power conversion circuit 12 is arranged in this order.

The third power conversion circuit 13 is arranged between the first power conversion circuit 11 and the second power conversion circuit 12. The third power conversion circuit 13 is connected to the first connection portion C1 between the first power conversion circuit 11 and the second power conversion circuit 12. The first power conversion circuit 11, the second power conversion circuit 12, and the third power conversion circuit 13 are electrically connected in parallel to the first terminal T1 and the second terminal T2.

As shown in FIGS. 19 and 20, the third power conversion circuit 13 includes the fifth semiconductor module 25, the sixth semiconductor module 26, the fifth conductor unit 35, the sixth conductor unit 36, and the fifth insulation. It includes a layer 45 and a sixth insulating layer 46.

As shown in FIG. 18, the fifth conductor unit 35 is connected to the first connecting portion C1. The sixth conductor unit 36 is connected to the second connecting portion C2.

As shown in FIGS. 18 and 20, the fifth semiconductor module 25 is connected to the first connection portion C1 via the fifth conductor unit 35. The fifth semiconductor module 25 is electrically connected to the first terminal T1 in parallel with the first semiconductor module 21 and the second semiconductor module 22.

The sixth semiconductor module 26 is connected to the fifth semiconductor module 25 via the third capacitor substrate 63. The sixth semiconductor module 26 is connected to the second connecting portion C2 via the sixth conductor unit 36. The sixth semiconductor module 26 is electrically connected to the second terminal T2 in parallel with the third semiconductor module 23 and the fourth semiconductor module 24.

The first semiconductor module 21 to the sixth semiconductor module 26 may be configured by a common semiconductor module. The first insulating layer 41 to the sixth insulating layer 46 may be composed of a common insulating layer. Therefore, as shown in FIGS. 4, 10 and 19, the first power conversion circuit 11, the second power conversion circuit 12, and the third power conversion circuit are the first conductor unit 31 to the sixth conductor unit 36. Except for the configuration, it may have a common structure.

As shown in FIG. 21, a seventh through hole TH7 is further provided in the first connection portion C1 according to the present embodiment. The second connection portion C2 is further provided with an eighth through hole TH8.

As shown in FIGS. 18 and 21, the first connection portion C1 is fixed to the third power conversion circuit 13 by the fifth fixture F5 inserted into the seventh through hole TH7. The second connection portion C2 is fixed to the third power conversion circuit 13 by the sixth fixture F6 inserted into the eighth through hole TH8.

When the first terminal T1 is an input terminal, the third power conversion circuit 13 has a first connection portion C1 on the downstream side of the current from the first power conversion circuit 11 and on the upstream side of the current from the second power conversion circuit 12. It is connected to the. Therefore, the length from the first position P1 to which the first terminal T1 of the first connecting portion C1 is connected to the seventh position P7 to which the fifth conductor unit 35 is connected is the first position of the first connecting portion C1. It is longer than the distance from P1 to the second position P2. Further, the length of the first connection portion C1 from the first position P1 to the third position P3 is longer than the distance from the first position P1 to the seventh position P7 of the first connection portion C1.

As shown in FIG. 21, in the present embodiment, the seventh position P7 to which the fifth conductor unit 35 of the first connecting portion C1 is connected is the first penetration of the outer edge of the seventh through hole TH7. It is the position closest to the hole TH1.

The inductance of the first connection portion C1 from the first position P1 to the seventh position P7 is larger than the inductance of the first connection portion C1 from the first position P1 to the second position P2. The inductance of the first connection portion C1 from the first position P1 to the third position P3 is larger than the inductance of the first connection portion C1 from the first position P1 to the seventh position P7.

In the present embodiment, the inductance of the first conductor unit 31 becomes larger than the inductance of the fifth conductor unit 35, so that the inductance of the first connection portion C1 from the first position P1 to the seventh position P7 and the first connection are made. The difference from the inductance from the first position P1 to the second position P2 of the portion C1 is reduced. That is, the difference between the inductance of the first conductor unit 31 and the inductance of the fifth conductor unit 35 is that the first conductor unit 31 is connected from the first position P1 to which the first terminal T1 of the first connection portion C1 is connected. It is equal to the difference between the inductance up to the second position P2 and the inductance from the first position P1 to which the first terminal T1 of the first connection portion C1 is connected to the seventh position P7 to which the fifth conductor unit 35 is connected.

Further, since the inductance of the fifth conductor unit 35 becomes larger than the inductance of the second conductor unit 32, the inductance from the first position P1 to the third position P3 of the first connecting portion C1 and the first of the first connecting portion C1. The difference from the inductance from the 1st position P1 to the 7th position P7 is reduced. That is, the difference between the inductance of the second conductor unit 32 and the inductance of the fifth conductor unit 35 is the third position where the second conductor unit 32 is connected from the position where the first terminal T1 of the first connecting portion C1 is connected. It is equal to the difference between the inductance up to P3 and the inductance from the position where the first terminal T1 of the first connection portion C1 is connected to the seventh position P7 to which the fifth conductor unit 35 is connected.

As shown in FIG. 18, in the present embodiment, the length of the fifth conductor unit 35 is longer than the length of the first conductor unit 31, so that the first positions P1 to the seventh of the first connecting portion C1 The difference between the length to the position P7 and the length from the first position P1 to the second position P2 of the first connecting portion C1 is reduced. That is, the difference between the length of the first conductor unit 31 and the length of the fifth conductor unit 35 is that the first conductor unit 31 is connected from the first position P1 to which the first terminal T1 of the first connecting portion C1 is connected. It is equal to the difference between the length to the second position P2 and the length from the first position P1 to which the first terminal T1 of the first connecting portion C1 is connected to the position to which the fifth conductor unit 35 is connected.

Further, since the length of the second conductor unit 32 is longer than the length of the fifth conductor unit 35, the length of the first connecting portion C1 from the first position P1 to the third position P3 and the length of the first connecting portion C1. The difference from the length from the first position P1 to the seventh position P7 is reduced. That is, the difference between the length of the second conductor unit 32 and the length of the fifth conductor unit 35 is the third position where the second conductor unit 32 is connected from the position where the first terminal T1 of the first connecting portion C1 is connected. It is equal to the difference between the length up to P3 and the length from the position where the first terminal T1 of the first connecting portion C1 is connected to the position where the fifth conductor unit 35 is connected.

The lengths of the first capacitor bus bar 71 and the second capacitor bus 72 are longer than when the power conversion device 100 does not include the third power conversion circuit 13 (see FIG. 1). Further, the output of the power conversion device 100 is, for example, 1.5 times larger than that in the case where the power conversion device 100 does not include the third power conversion circuit 13 (see FIG. 1). Therefore, the thickness and width of the first condenser bus bar 71 and the second condenser bus bar 72 are increased by that amount.

As shown in FIG. 22, the fifth conductor unit 35 includes a plurality of fifth linear conductor portions 351 and a plurality of fifth curved conductor portions 352, a fifth bent conductor portion 353, and a fifth back conductor portion 354. And have. The plurality of fifth linear conductor portions 351 are, for example, I-shaped. The plurality of fifth curved conductor portions 352 is longer than the plurality of fifth linear conductor portions 351. The plurality of fifth curved conductor portions 352 are, for example, U-shaped. The first connecting portion C1 is connected to the fifth bent conductor portion 353. The fifth bent conductor portion 353 is, for example, L-shaped. As shown in FIG. 23, the fifth back conductor portion 354 is arranged so as to sandwich the cooler 8. The fifth back conductor portion 354 is directly connected to the fifth semiconductor module 25. In the fifth conductor unit 35, the current flows in a meandering manner through the plurality of fifth curved conductor portions 352 and the plurality of fifth linear conductor portions 351.

As shown in FIG. 22, the plurality of fifth linear conductor portions 351 and the plurality of fifth curved conductor portions 352 are removable from each other. In the present embodiment, the plurality of fifth linear conductor portions 351 and the plurality of fifth curved conductor portions 352, the fifth bent conductor portion 353, and the fifth back surface conductor portion 354 are a plurality of fifth screws S5. Detachable from each other. Although not shown, the fifth insulating layer 45 is provided with a plurality of through holes through which each of the plurality of fifth screws S5 can penetrate. The fifth insulating layer 45 is fixed to the cooler 8 by the fifth insulating screw SS5.

As shown in FIG. 24, the sixth conductor unit 36 includes a plurality of sixth linear conductor portions 361, a plurality of sixth curved conductor portions 362, a sixth bent conductor portion 363, and a sixth back conductor portion 364. And have. The plurality of sixth linear conductor portions 361 are, for example, I-shaped. The plurality of sixth curved conductor portions 362 are longer than the plurality of sixth linear conductor portions 361. The plurality of sixth curved conductor portions 362 are, for example, U-shaped. A second connecting portion C2 is connected to the sixth bent conductor portion 363. The sixth bent conductor portion 363 is, for example, L-shaped. As shown in FIG. 25, the sixth back conductor portion 364 is arranged so as to sandwich the cooler 8. The sixth back conductor portion 364 is directly connected to the sixth semiconductor module 26. In the sixth conductor unit 36, the current flows in a meandering manner through the plurality of sixth curved conductor portions 362 and the plurality of sixth linear conductor portions 361.

As shown in FIG. 24, the plurality of sixth linear conductor portions 361 and the plurality of sixth curved conductor portions 362 are removable from each other. In the present embodiment, the plurality of sixth linear conductor portions 361, the plurality of sixth curved conductor portions 362, the sixth bent conductor portion 363, and the sixth back surface conductor portion 364 are a plurality of sixth screws S6. Detachable from each other. Although not shown, the sixth insulating layer 46 is provided with a plurality of through holes through which each of the plurality of sixth screws S6 can penetrate. The sixth insulating layer 46 is fixed to the cooler 8 by the sixth insulating screw SS6.

As shown in FIG. 26, the fifth semiconductor module 25 includes an R-phase fifth semiconductor module section 25R, an S-phase fifth semiconductor module section 25S, and a T-phase fifth semiconductor module section 25T. Each of the R-phase fifth semiconductor module unit 25R, the S-phase fifth semiconductor module unit 25S, and the T-phase fifth semiconductor module unit 25T is electrically connected to each of the R-phase, S-phase, and T-phase, respectively. .. Each of the R-phase fifth semiconductor module unit 25R, the S-phase fifth semiconductor module unit 25S, and the T-phase fifth semiconductor module unit 25T has two semiconductor elements SC electrically connected in parallel.

The sixth semiconductor module 26 includes a U-phase sixth semiconductor module section 26U, a V-phase sixth semiconductor module section 26V, and a W-phase sixth semiconductor module section 26W. Each of the U-phase 6th semiconductor module section 26U, the V-phase 6th semiconductor module section 26V, and the W-phase 6th semiconductor module section 26W is electrically connected to each of the U-phase, V-phase, and W-phase, respectively. .. Each of the U-phase 6th semiconductor module unit 26U, the V-phase 6th semiconductor module unit 26V, and the W-phase 6th semiconductor module unit 26W has two semiconductor element SCs electrically connected in parallel. Each of the U-phase 6th semiconductor module section 26U, the V-phase 6th semiconductor module section 26V, and the W-phase 6th semiconductor module section 26W is connected to the R-phase 5th semiconductor module section 25R and the S-phase second via the third capacitor substrate 63. It is electrically connected to the 5th semiconductor module section 25S and the T-phase 5th semiconductor module section 25T.

Although the case where the power conversion device 100 includes the third power conversion circuit 13 in the present embodiment has been described, the power conversion device 100 may further include the fourth power conversion circuit. That is, the power conversion device 100 may include four or more power conversion circuits.

Subsequently, the action and effect of the present embodiment will be described.
According to the power conversion device 100 according to the second embodiment, as shown in FIG. 18, the power conversion device 100 includes a third power conversion circuit 13. Therefore, the capacity of the power conversion device 100 can be increased by the third power conversion circuit 13 as compared with the case where the power conversion device 100 does not include the third power conversion circuit 13. For example, in a product having a wide output band such as an elevator, it is required to increase the capacity of the power conversion device 100. In the present embodiment, the capacity of the power conversion device 100 used for an elevator or the like can be increased. Therefore, the expandability of the product lineup using the power conversion device 100 according to the present embodiment is improved.

If the power conversion device 100 is individually commercialized in order to improve the expandability of the lineup, the number of processes such as design work and production control will increase. Therefore, the manufacturing cost of the product increases. The improvement of the expandability of the lineup is, for example, support for a wide range of capacities.

On the other hand, in the power conversion device 100 according to the present embodiment, as shown in FIGS. 1, 3, 18, and 20, the first power conversion circuit 11, the second power conversion circuit 12, and the third power conversion circuit 12 and the third. The first semiconductor module 21 to the sixth semiconductor module 26 of the power conversion circuit 13 are configured by a common semiconductor module. Further, the first insulating layer 41 to the fourth insulating layer 44 are composed of a common insulating layer. That is, as shown in FIGS. 4, 10 and 19, the first power conversion circuit 11 to the third power conversion circuit 13 have a common configuration except for the first conductor unit 31 to the sixth conductor unit 36. is doing. Therefore, the design of the power conversion device 100 can be changed only by changing the first connection portion C1, the second connection portion C2, and the first conductor unit 31 to the sixth conductor unit 36 of the power conversion circuit. Therefore, it is possible to reduce the increase in processes such as design work and production control. Therefore, it is possible to improve the expandability of the lineup and reduce the manufacturing cost at the same time. That is, it is possible to achieve both an increase in capacity and a reduction in manufacturing cost.

As shown in FIG. 18, the first connection portion C1 and the second connection portion C2 are connected to the first power conversion circuit 11 and the second power conversion circuit 12 by the first fixture F1 to the sixth fixture F6 which are screws. It is fixed. Further, the first condenser bus bar 71 and the second condenser bus bar 72 are fixed to the first power conversion circuit 11 to the third power conversion circuit 13 by screws. Therefore, the first power conversion circuit 11 to the third power conversion circuit 13 are separated from the first connection portion C1, the second connection portion C2, the first capacitor bus bar 71, and the second capacitor bus bar 72 only by removing the plurality of screws. Can be removed. Therefore, the interchangeability of the first power conversion circuit 11 to the third power conversion circuit 13 is improved. Further, in the present embodiment, the power conversion device 100 has consumables such as a semiconductor element and a capacitor. Therefore, replacement work may be carried out. Since the interchangeability of the first power conversion circuit 11 to the third power conversion circuit 13 is improved, the exchangeability of consumables is also improved. Further, since the screw heads of the plurality of screws are oriented in the same direction, the workability of the replacement work is improved. As a result, the working time of the replacement work can be reduced. Further, even when the number of power conversion circuits is increased, if the number of a plurality of screws is increased, the first connection portion C1, the second connection portion C2, the first capacitor bus bar 71, and the second capacitor bus bar 72 are other members. It is not necessary to use. Therefore, multi-parallelization is possible while maintaining improved workability.

Embodiment 3.
Next, the configuration of the elevator control panel 200 according to the third embodiment will be described with reference to FIGS. 27 to 30. Unless otherwise specified, the third embodiment has the same configuration and operation and effect as the second embodiment. Therefore, the same components as those in the second embodiment are designated by the same reference numerals, and the description thereof will not be repeated.

As shown in FIG. 20, the elevator control panel 200 is arranged in the machine room MR. Further, the elevator control panel 200 is required to be miniaturized. The elevator control panel 200 is configured to receive three-phase alternating current supplied from the main power supply PW of the building in which the elevator 300 is installed. Further, the elevator control panel 200 can form a current having a power waveform for driving the elevator hoist HM.

The elevator 300 includes an elevator control panel 200, a wiring W, a prime mover M, a car 301, a weight 302, and a wire rope 303. The elevator control panel 200 is an elevator control panel for controlling the hoisting machine HM of the elevator 300. The hoist HM includes a motor M (see FIG. 1). The elevator control panel 200 is installed in, for example, a machine room of a building or a facility. The height of the elevator control panel 200 is, for example, 2 m. The width of the elevator control panel 200 is, for example, 1 m. The depth of the elevator control panel 200 is, for example, 0.5 m.

The basket 301 and the weight 302 are connected to both ends of the wire rope 303, respectively. The wire rope 303 is connected to the hoisting machine HM. The hoisting machine HM is configured to raise and lower the car 301 by winding the wire rope 303.

As shown in FIGS. 28 and 29, the elevator control panel 200 according to the present embodiment includes a power conversion device 100 and wiring W. The wiring W includes the first wiring portion W1 to the seventh wiring portion W7. The elevator control panel 200 according to the present embodiment includes a reactor R, a first terminal block TS1, a second terminal block TS2, a housing 91, a support plate 92, a first control board 931 and a second control board 932, and a third control. It further includes a substrate 933, an electromagnetic contactor 94 and a noise filter 95. In FIG. 28, for convenience of explanation, the first wiring unit W1 to the seventh wiring unit W7 are not shown. Further, in FIG. 29, for convenience of explanation, the first control board 931 to the third control board 933 and the support plate 92 are not shown. In FIGS. 28 and 29, the door of the elevator control panel 200 is not shown for convenience of explanation.

As shown in FIG. 28, the housing 91 and the support plate 92 are made of, for example, sheet metal. The first control board 931 and the second control board 932 and the second control board 932 are configured to control the first power conversion circuit 11, the second power conversion circuit 12, and the third power conversion circuit 13, respectively.

As shown in FIGS. 27 and 29, the first terminal T1 of the power conversion device 100 is electrically connected to the hoisting machine HM of the elevator 300. The first terminal T1 of the power conversion device 100 is connected to the wiring W. The power conversion device 100 is electrically connected to the hoisting machine HM of the elevator 300 via the wiring W. The first wiring portion W1 to the seventh wiring portion W7 of the wiring W may be a cable or a bus bar. The second terminal T2 is connected to the second wiring portion W2. The first terminal block TS1 is connected to the main power supply PW by the third wiring unit W3. Further, the first terminal block TS1 is connected to the reactor R by the fourth wiring portion W4.

The reactor R is connected to the magnetic contactor 94 by the fifth wiring portion W5. The reactor R is configured to suppress the noise component generated in the current power conversion device 100 from flowing out to the main power supply PW.

The electromagnetic contactor 94 is connected to the power conversion device 100 by the first wiring unit W1. The magnetic contactor 94 is configured to temporarily cut off the power supply from the main power supply PW to the power conversion device 100.

The noise filter 95 is connected to the power conversion device 100 by the second wiring unit W2. The noise filter 95 is connected to the second terminal block TS2 by the seventh wiring unit W7. The noise filter 95 is configured to remove noise in the power waveform output from the power conversion device 100.

The first wiring unit W1 is connected to the first terminal block TS1 from the bottom side of the elevator control panel 200. The second wiring portion W2 is connected to the second terminal T2 from the bottom side of the elevator control panel 200. The first wiring portion W1 and the second wiring portion W2 are arranged so as to sandwich the reactor R. In the present embodiment, the first wiring portion W1 is arranged on the first terminal block TS1 side with respect to the reactor R. Further, the second wiring portion W2 is arranged on the second terminal block TS2 side with respect to the reactor R.

As shown in FIG. 30, the power conversion device 100, the first terminal block TS1, the second terminal block TS2, the noise filter 95, the reactor R, the electromagnetic contactor 94, and the support plate 92 are arranged inside the housing 91. ing. The power conversion device 100 and the support plate 92 are arranged on the upper side in the internal space of the housing 91. The first terminal block TS1, the second terminal block TS2, the noise filter 95, the reactor R, and the electromagnetic contactor 94 are mounted on the lower side in the internal space of the housing 91. The first control board 931 and the second control board 932 and the third control board 933 are arranged on the front side of the power conversion device 100. The first control board 931 and the second control board 932 and the third control board 933 are attached to the support plate 92.

Subsequently, the action and effect of the present embodiment will be described.
According to the elevator control panel 200 according to the present embodiment, as shown in FIG. 29, the elevator control panel 200 includes the power conversion device 100 according to any one of the first and second embodiments. Therefore, it is possible to prevent the position of the first terminal T1 from being restricted. Therefore, it is possible to suppress the limitation of the position of the first wiring portion W1 connected to the first terminal T1. As a result, it is possible to prevent the first wiring portion W1 from being connected to the first terminal T1 at a position where the first wiring portion W1 bends. That is, it is possible to prevent the first wiring portion W1 from being greatly bent. Therefore, it is possible to prevent the wiring path of the elevator control panel 200 from being significantly bent. As a result, the space in which the wiring of the elevator control panel 200 is arranged can be miniaturized, so that the elevator control panel 200 can be miniaturized. In addition, the manufacturing cost of the elevator control panel 200 can be reduced.

Embodiment 4.
Next, the configuration of the power conversion device 100 according to the fourth embodiment will be described with reference to FIGS. 31 to 33. Unless otherwise specified, the fourth embodiment has the same configuration and operation and effect as the first embodiment. Therefore, the same components as those in the first embodiment are designated by the same reference numerals, and the description thereof will not be repeated.

As shown in FIG. 31, the power conversion device 100 according to the fourth embodiment further includes a cooling device 80. The cooling device 80 includes a first cooling unit 83 and a second cooling unit 84. The number of the plurality of fans F is the same as the number of the plurality of cooling units. Each of the plurality of fans F is arranged so as to cool the first cooling unit 83 and the second cooling unit 84, respectively.

As shown in FIG. 32, the first cooling unit 83 has a first front plate 831, a first facing plate 832, a first side plate 833, and a plurality of first fins 834. The first semiconductor module 21 is fixed to the first front plate 831. The first facing plate 832 faces the first front plate 831. The first side plate 833 and the plurality of first fins 834 connect the first facing plate 832 to the first front plate 831. The first side plate 833 and the first fin 834 are adjacent to the first front plate 831 and the first facing plate 832. The first side plate 833 and the plurality of first fins 834 are sandwiched between the first front plate 831 and the first facing plate 832. The first side plate 833 may have the same shape as each of the plurality of first fins 834.

The plurality of first linear conductor portions 311 and the plurality of first curved conductor portions 312 are fixed to the first facing plate 832 and the first side plate 833. The plurality of first linear conductor portions 311 and the plurality of first curved conductor portions 312 are fixed to the first facing plate 832 and the first side plate 833 via the first insulating layer 41. The plurality of first linear conductor portions 311 and the plurality of first curved conductor portions 312 are fixed to the first cooling unit 83 over the first facing plate 832 and the first side plate 833.

The second cooling unit 84 has a second front plate 841, a second facing plate 842, a second side plate 843, and a plurality of second fins 844. The second semiconductor module 22 is fixed to the second front plate 841. The second facing plate 842 faces the second front plate 841. The second side plate 843 and the plurality of second fins 844 connect the second facing plate 842 to the second front plate 841. The second side plate 843 and the second fin 844 are adjacent to the second front plate 841 and the second facing plate 842. The second side plate 843 and the plurality of second fins 844 are sandwiched between the second front plate 841 and the second facing plate 842. The second side plate 843 may have the same shape as each of the plurality of second fins 844.

The plurality of second conductor portions 321 are fixed to the second facing plate 842 and the second side plate 843. The plurality of second conductor portions 321 are fixed to the second facing plate 842 and the second side plate 843 via the second insulating layer. The plurality of second conductor portions 321 are fixed to the second cooling unit 84 over the second facing plate 842 and the second side plate 843.

The first side plate 833, the plurality of first fins 834, the second side plate 843 and the plurality of second fins 844 may be manufactured, for example, by extrusion processing. The first side plate 833, the plurality of first fins 834, the second side plate 843, and the plurality of second fins 844 are made of, for example, aluminum (Al). As a result, the cooling device 80 can be manufactured at low cost.

As shown in FIGS. 31 and 33, the plurality of fans F are connected to the lower end of the cooling device 80. The plurality of fans F can forcibly remove the heat of the cooling device 80 by flowing air from the lower side between the plurality of fins of the cooling device 80 (first fin 834 and second fin 844). That is, the plurality of fans F can cool the cooling device 80 by forced air cooling. Thereby, it is possible to reduce the vertical dimension of the power conversion device 100 as compared with the first embodiment.

Next, the configuration of the power conversion device 100 according to the modified example of the fourth embodiment will be described with reference to FIG. 34.

As shown in FIG. 34, in the power conversion device 100 according to the modification of the fourth embodiment, the cooling device 80 further includes the third cooling unit 85 and the fourth cooling unit 86. The power conversion device 100 includes a first power conversion circuit 11, a second power conversion circuit 12, a third power conversion circuit 13, a fourth power conversion circuit 14, and a first semiconductor module 21 (see FIG. 32). It includes a second semiconductor module 22 (see FIG. 32), a third semiconductor module (not shown), and a fourth semiconductor module (not shown).

The first power conversion circuit 11, the first semiconductor module 21 (see FIG. 32), and the first cooling unit 83 constitute the first power conversion unit U1. The second power conversion circuit 12, the second semiconductor module 22 (see FIG. 32), and the second cooling unit 84 constitute the second power conversion unit U2. The third power conversion circuit 13, the third semiconductor module (not shown), and the third cooling unit 85 constitute the third power conversion unit U3. The fourth power conversion circuit 14, the fourth semiconductor module (not shown), and the fourth cooling unit 86 constitute the fourth power conversion unit U4.

The first power conversion unit U1, the second power conversion unit U2, the third power conversion unit U3, and the fourth power conversion unit U4 are electrically connected in parallel. In the present embodiment, the first power conversion unit U1 and the third power conversion unit U3 are arranged in the vertical direction. The vertical direction is the direction in which air flows by the fan F. The second power conversion unit U2 and the fourth power conversion unit U4 are arranged in the vertical direction. The second power conversion unit U2 and the fourth power conversion unit U4 are arranged in the horizontal direction so as to intersect the first power conversion unit U1 and the third power conversion unit U3 in the vertical direction. That is, the four power conversion units are arranged in a 2 × 2 matrix. The matrix is not limited to 2 × 2, and may be N × N (N is a natural number of 2 or more). By adjusting the length of each conductor unit, the inductance of each power conversion circuit is adjusted. As a result, the bias of the current in each power conversion circuit is suppressed.

Subsequently, the action and effect of the present embodiment will be described.
According to the power conversion device 100 according to the fourth embodiment, as shown in FIG. 32, the plurality of first linear conductor portions 311 and the plurality of first curved conductor portions 312 are the first facing plate 832 and the first. It is fixed to the side plate 833, and the plurality of second conductor portions 321 are fixed to the second facing plate 842 and the second side plate 843. Therefore, the plurality of first linear conductor portions 311 and the plurality of first curved conductor portions 312 are fixed to the two surfaces of the first cooling unit 83, and the plurality of second conductor portions 321 are second-cooled. It is fixed to the two sides of the unit 84. Therefore, the area where the first conductor unit 31 is fixed to the first cooling unit 83 can be larger than that when the first conductor unit 31 is fixed to only one surface of the first cooling unit. .. Further, the area where the second conductor unit 32 is fixed to the second cooling unit 84 can be made larger than the case where the second conductor unit 32 is fixed to only one surface of the second cooling unit. .. Therefore, it becomes easy to adjust the lengths of the first conductor unit 31 and the second conductor unit 32 on the fixed surface. In other words, the adjustment white of the first conductor unit 31 and the second conductor unit 32 can be increased. This makes it possible to improve the degree of freedom in designing the power conversion device 100 for adjusting the inductance.

The first power conversion unit U1 and the third power conversion unit U3 are arranged in the vertical direction, and the second power conversion unit U2 and the fourth power conversion unit U4 are arranged in the vertical direction. Therefore, by allowing air to flow in the vertical direction by the fan F, the configuration of the air passage through which the air flows can be simplified in the vertical direction, and space can be saved in the horizontal direction. Further, the number of fans F can be reduced as compared with the case where a plurality of power conversion units are not arranged in the vertical direction.

The embodiments disclosed this time should be considered to be exemplary in all respects and not restrictive. The scope of this disclosure is set forth by the claims rather than the description above and is intended to include all modifications within the meaning and scope of the claims.

11 1st power conversion circuit, 12 2nd power conversion circuit, 13 3rd power conversion circuit, 21 1st semiconductor module, 22 2nd semiconductor module, 23 3rd semiconductor module, 24 4th semiconductor module, 25 5th semiconductor module , 31 1st conductor unit, 32 2nd conductor unit, 33 3rd conductor unit, 34 4th conductor unit, 35 5th conductor unit, 100 power converter, 200 elevator control panel, 311 1st linear conductor part, 312 1st curved conductor part, 321 2nd conductor part, 811 1st cooling plate, 821 2nd cooling plate, C1 1st connection part, C2 2nd connection part, T1 1st terminal, T2 2nd terminal, W wiring.

Claims

1st terminal and
The first connection part connected to the first terminal and
A first power conversion circuit including a first conductor unit connected to the first connecting portion and a first semiconductor module connected to the first connecting portion via the first conductor unit.
A second power conversion circuit including a second conductor unit connected to the first connecting portion and a second semiconductor module connected to the first connecting portion via the second conductor unit is provided.
The first semiconductor module and the second semiconductor module are electrically connected in parallel to the first terminal.
The difference between the inductance of the first conductor unit and the inductance of the second conductor unit is the inductance from the position where the first terminal of the first connection portion is connected to the position where the first conductor unit is connected. Equal to the difference from the inductance from the position where the first terminal of the first connection portion is connected to the position where the second conductor unit is connected.
The second conductor unit of the second power conversion circuit is a power conversion device connected to the first connection portion on the side opposite to the first terminal with respect to the first power conversion circuit.
The difference between the length of the first conductor unit and the length of the second conductor unit is the length from the position where the first terminal of the first connection portion is connected to the position where the first conductor unit is connected. The power conversion device according to claim 1, which is equal to the difference in length from the position where the first terminal of the first connection portion is connected to the position where the second conductor unit is connected.
The first conductor unit has a plurality of first linear conductor portions and a plurality of first curved conductor portions longer than the plurality of first linear conductor portions.
The second conductor unit has a plurality of second conductor portions, and has a plurality of second conductor portions.
The plurality of first linear conductor portions and the plurality of first curved conductor portions are removable from each other.
The power conversion device according to claim 1 or 2, wherein the plurality of second conductor portions are detachable from each other.
Further equipped with a cooling device including a first cooling unit and a second cooling unit,
The first cooling unit is a first front plate to which the first semiconductor module is fixed, a first facing plate facing the first front plate, and a first connecting the first facing plate to the first front plate. Has a side plate,
The second cooling unit connects the second front plate to which the second semiconductor module is fixed, the second facing plate facing the second front plate, and the second facing plate to the second front plate. Has a side plate,
The plurality of first linear conductor portions and the plurality of first curved conductor portions are fixed to the first facing plate and the first side plate.
The power conversion device according to claim 3, wherein the plurality of second conductor portions are fixed to the second facing plate and the second side plate.
Further equipped with a cooler including a first cooling plate and a second cooling plate,
The first conductor unit and the first semiconductor module are fixed to the first cooling plate of the cooler.
The power conversion device according to any one of claims 1 to 3, wherein the second conductor unit and the second semiconductor module are fixed to the second cooling plate of the cooler.
A second terminal arranged on the side opposite to the first terminal with respect to the second power conversion circuit,
Further provided with a second connection portion connected to the second terminal,
The first power conversion circuit includes a third conductor unit connected to the first conductor unit and connected to the second connection portion via the first semiconductor module.
The second power conversion circuit includes a fourth conductor unit connected to and connected to the second conductor unit via the second semiconductor module.
The difference between the inductance of the third conductor unit and the inductance of the fourth conductor unit is the inductance from the position where the second terminal of the second connection portion is connected to the position where the third conductor unit is connected. Equal to the difference from the inductance from the position where the second terminal of the second connection portion is connected to the position where the fourth conductor unit is connected.
Any of claims 1 to 5, wherein the third conductor unit of the first power conversion circuit is connected to the second connection portion on the side opposite to the second terminal with respect to the second power conversion circuit. The power conversion device according to item 1.
The difference between the length of the third conductor unit and the length of the fourth conductor unit is the length from the position where the second terminal of the second connection portion is connected to the position where the third conductor unit is connected. The power conversion device according to claim 6, which is equal to the difference in length from the position where the second terminal is connected to the position where the fourth conductor unit is connected.
A third power conversion circuit connected to the first connection portion between the first power conversion circuit and the second power conversion circuit is further provided.
The third power conversion circuit includes a fifth conductor unit connected to the first connection portion and a fifth semiconductor module connected to the first connection portion via the fifth conductor unit.
The fifth semiconductor module is electrically connected to the first terminal in parallel with the first semiconductor module and the second semiconductor module.
The difference between the inductance of the first conductor unit and the inductance of the fifth conductor unit is the inductance from the position where the first terminal of the first connection portion is connected to the position where the first conductor unit is connected. Equal to the difference from the inductance from the position where the first terminal of the first connection portion is connected to the position where the fifth conductor unit is connected.
The difference between the inductance of the second conductor unit and the inductance of the fifth conductor unit is the inductance from the position where the first terminal of the first connection portion is connected to the position where the second conductor unit is connected. The power conversion according to any one of claims 1 to 7, which is equal to the difference from the inductance from the position where the first terminal of the first connection portion is connected to the position where the fifth conductor unit is connected. Device.
It is an elevator control panel for controlling the elevator hoisting machine.
The power conversion device according to any one of claims 1 to 8 is provided.
The first terminal of the power conversion device is an elevator control panel that is electrically connected to the hoisting machine of the elevator.