WO2022127178A1 - 一种薄膜太阳能电池 - Google Patents

一种薄膜太阳能电池 Download PDF

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WO2022127178A1
WO2022127178A1 PCT/CN2021/114795 CN2021114795W WO2022127178A1 WO 2022127178 A1 WO2022127178 A1 WO 2022127178A1 CN 2021114795 W CN2021114795 W CN 2021114795W WO 2022127178 A1 WO2022127178 A1 WO 2022127178A1
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WIPO (PCT)
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layer
groove
electrode layer
solar cell
positive electrode
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PCT/CN2021/114795
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English (en)
French (fr)
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董超
赵志国
秦校军
赵东明
熊继光
张赟
刘家梁
李新连
肖平
夏渊
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中国华能集团清洁能源技术研究院有限公司
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Priority to JP2021600193U priority Critical patent/JP3240825U/ja
Publication of WO2022127178A1 publication Critical patent/WO2022127178A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the utility model belongs to the field of solar cell devices, and relates to a thin film solar cell.
  • Solar energy is a clean energy source that directly utilizes sunlight.
  • Solar cells usually produced in thin film form, are mostly fabricated on large-sized conductive glass substrates, which are separated into effectively-sized interconnected single cells by a laser scribing process.
  • the classic method of laser scribing is to carry out laser scribing of different depths with certain positional regularity of P1, P2, and P3 on the cell substrate to realize the series connection between cells.
  • This method will inevitably cause direct contact between the positive and negative electrodes of the dead zone of the battery between the P1, P2, and P3 scribe lines, resulting in short-circuit heating in the dead zone of the battery, which will adversely affect the photoelectric conversion efficiency of the solar cell and the stability of the battery. That is, the classic laser engraving process will cause the existence of a dead zone of the battery, and the positive and negative electrodes of the active layer of the dead zone battery will directly contact, which will cause the dead zone battery to short-circuit and heat up.
  • the purpose of the present utility model is to overcome the shortcomings of the above-mentioned prior art, that the laser engraving process will cause the dead area of the battery and lead to short-circuit heating of the dead battery, and provide a thin-film solar cell.
  • a thin film solar cell comprises conductive glass, an absorption layer is arranged on the upper surface of the conductive glass, and a positive electrode layer and a negative electrode layer are respectively arranged on the upper and lower surfaces of the absorption layer;
  • the negative electrode layer is provided with a first scribed groove that communicates with the glass layer of the conductive glass, the first scribed groove is filled with an absorbing layer, and the upper surface of the absorption layer is provided with a second scribed groove that communicates with the negative electrode layer.
  • the bottom of the second line groove is located on the side of the top of the first line groove.
  • the upper surface of the absorption layer is provided with a positive electrode layer.
  • the third line groove, the third line groove is located on the side of the top of the second line groove.
  • the widths of the first groove, the second groove and the third groove are all 28-32 ⁇ m.
  • the first scribed groove, the second scribed groove and the third scribed groove are all obtained by laser scribed by a nanosecond laser.
  • the negative electrode layer is a conductive oxide layer or an electron transport layer
  • the positive electrode layer is a conductive oxide layer or a hole transport layer.
  • the absorption layer is a perovskite layer
  • the conductive glass is ITO glass or FTO glass.
  • the thickness of the absorption layer is 500-700 nm; the thickness of the positive electrode layer and the negative electrode layer are both 300-700 nm.
  • one end of the bottom of the second groove is connected to one end of the top of the first groove; and one end of the top of the second groove is connected to one end of the bottom of the third groove.
  • the utility model discloses a thin-film solar cell.
  • a negative electrode layer is provided with a first scribed groove communicated with conductive glass, the first scribed groove is filled with an absorption layer, and the upper surface of the first absorption layer is provided with a negative electrode.
  • the second scribed grooves are in the same layer, the bottom of the second scribed groove is located on the side of the top of the first scribed groove, the upper surface of the absorption layer is provided with a positive electrode layer, and the second scribed groove is filled with a positive electrode layer.
  • the electrode layer is provided with a third scribe line groove communicated with the absorption layer, and the third scribe line groove is located on the side of the top of the second scribe line groove.
  • the engraving angle of the P2 engraving line in the present invention By selecting the engraving angle of the P2 engraving line in the present invention, the direct contact between the adjacent sub-battery electrodes between P1, P2, and P3 is realized, and the direct contact between the positive and negative electrodes of the battery dead zone active layer in the classical engraving method is effectively removed. The problem of short circuit heating in the dead zone of the battery is avoided.
  • the conductive glass is selected from ITO glass or FTO glass, and the transparent conductive oxide is deposited on the glass, which can enhance the conductivity of the prepared battery.
  • FIG. 1 is a schematic diagram of the cross-sectional structure of the battery after the negative electrode layer is deposited on the conductive glass in the thin-film solar cell of the present invention
  • FIG. 2 is a schematic diagram of the cross-sectional structure of the thin-film solar cell of the present invention after laser P1 marking;
  • FIG. 3 is a schematic diagram of the cross-sectional structure of the cell after the absorption layer is deposited in the thin-film solar cell of the present invention
  • FIG. 4 is a schematic diagram of the cross-sectional structure of the thin-film solar cell of the present invention after laser P2 marking;
  • FIG. 5 is a schematic diagram of the cross-sectional structure of the battery after the deposition of the positive electrode layer in the thin-film solar cell of the present invention.
  • FIG. 6 is a schematic diagram of the cross-sectional structure of the thin-film solar cell of the present invention after laser P3.
  • Fig. 7 is the relative bitmap of the laser lens and the battery in the engraving process
  • 101-negative electrode layer 101-negative electrode layer; 102-conductive glass; 201-first groove; 301-absorbing layer; 401-second groove; 501-positive electrode layer; 601-third groove; 701- Laser lens.
  • a thin film solar cell includes conductive glass 102, an absorption layer 301 is provided on the upper surface of the conductive glass 102, a positive electrode layer 501 and a negative electrode layer 101 are respectively provided on the upper and lower surfaces of the absorption layer 301;
  • the bottom of the line groove 401 is located on the side of the top of the first line groove 201, the upper surface of the absorption layer 301 is provided with a positive electrode layer 501, the second line groove 401 is filled with a positive electrode layer 501, and the positive electrode layer is provided with and
  • the absorption layer 301 communicates with the third scribed groove 601 , and the third scribed groove 601 is located on the side of the top of the second scribed groove 401 .
  • One end of the bottom of the second groove 401 is connected to one end of the top of the first groove 201 ; one end of the top of the second groove 401 is connected to one end of the bottom of the third groove 601 .
  • the widths of the first scribed groove 201 , the second scribed groove 401 and the third scribed groove 601 are all 28-32 ⁇ m.
  • the first scribed grooves 201 , the second scribed grooves 401 and the third scribed grooves 601 are all obtained by laser scribed by a nanosecond laser.
  • the first engraving slot 201 and the third engraving slot 601 are both cuboid structures, the second engraving slot 401 is a parallelepiped structure, and in the second engraving slot 401, the vertical direction is inclined clockwise or counterclockwise by 30-75 Spend.
  • the negative electrode layer 101 is a conductive oxide layer or an electron transport layer; the positive electrode layer 501 is a conductive oxide layer or a hole transport layer.
  • the absorption layer 301 is made of copper indium gallium selenide, perovskite and cadmium telluride.
  • the conductive glass 102 is ITO glass or FTO glass.
  • the absorption layer 301 is a perovskite layer, and the thickness of the absorption layer 301 is 500 nm; the thickness of the positive electrode layer 501 and the negative electrode layer 101 are both 300 nm.
  • the thickness of the absorption layer 301 is 650 nm; the thickness of the positive electrode layer 501 and the negative electrode layer 101 are both 500 nm.
  • the thickness of the absorption layer 301 is 700 nm; the thickness of the positive electrode layer 501 and the negative electrode layer 101 are both 700 nm.
  • the thickness of the absorption layer 301 is 510 nm; the thickness of the positive electrode layer 501 and the negative electrode layer 101 are both 690 nm.
  • the thickness of the absorption layer 301 is 505 nm; the thickness of the positive electrode layer 501 and the negative electrode layer 101 are both 310 nm.
  • the thickness of the absorption layer 301 is 690 nm; the thickness of the positive electrode layer 501 and the negative electrode layer 101 are both 560 nm.
  • the laser marking method of the above-mentioned thin film solar cell comprises the following steps:
  • S1 As shown in FIG. 1 , deposit the negative electrode layer 101 on the conductive glass 102 , and then carry out laser P1 engraving on the negative electrode layer 101 , and engrave the conductive glass 102 from the negative electrode layer 101 , and form several A first scribe groove 201 for dividing the negative electrode layer 101, as shown in FIG. 2; while the laser P1 scribes the line, a Mask point is marked on the edge of the conductive glass 102 to locate the position of the subsequent scribe;
  • One end of the bottom of the second groove 401 is connected to one end of the top of the first groove 201 ; one end of the top of the second groove 401 is connected to one end of the bottom of the third groove 601 .
  • the pulse duration is 0.1 to 100 nanoseconds;
  • the laser scribing method of the present invention is to scribe the solar cell structure to form a monolithic integrated photovoltaic module. a solar cell.
  • a nanosecond laser that is, a laser with a pulse frequency in the nanosecond range, the laser is used to locate the laser's precise position and angle to achieve precise tilt processing of the laser P2 scribe line.
  • the width of the second engraving groove 401 by estimating the distance between the first engraving groove 201 and the third engraving groove 601, and by measuring the thickness of the absorption layer 301 and The distance between the first scribed groove 201 and the third scribed groove 601 determines the inclination angle of the second scribed groove 401 .
  • the distance between the scribe lines of the first scribe line groove 201 and the second scribe line groove 401 should be controlled between 30-35 microns, In this way, the distance between the first line groove 201 , the second line groove 401 and the third line groove 601 is about 100 nanometers.
  • the absorption layer used in this embodiment is a perovskite layer, and the perovskite layer
  • the thickness of the laser is in the range of 500-700 nanometers, which puts forward higher requirements for the positioning accuracy and stability of the laser.
  • the position of the laser lens 701 during the scribing process operation As shown in FIG. 7 , the position of the laser lens 701 during the scribing process operation. Through the precise positioning of the laser mask point and the precise control of the laser inclination angle, the P2 marking can achieve the marking effect as shown in Figure 6.
  • a charge transport electrode layer is prepared on the battery absorption layer, and the electrode layer is generally composed of deposited metal or a combination of a charge transport layer and a metal layer.
  • the position of the engraved line of P3 should be determined according to the pre-determined distance between P1 and P3.
  • the width of the scribe line of P3 is also about 30 microns, which ensures that the metal electrodes can be separated by the scribe line of P3, and at the same time minimizes the ineffective area of the battery.
  • the thin film solar cell can be any one of perovskite cells, amorphous silicon cells, copper indium gallium selenide cells, cadmium telluride cells, and the like.
  • the absorption layer is the layer that converts photons in light into electrons.
  • the absorption layer includes copper indium gallium selenide CIGS, perovskite, cadmium telluride and the like.
  • the absorber layer is the perovskite layer; for amorphous silicon cells, the basic components of the absorber layer are amorphous silicon compounds, also known as a-Si and amorphous silicon; for copper indium gallium selenide cells, the absorber layer
  • the direct band gap compound semiconductor material composed of copper, indium, selenium and other metal elements is mixed with CIS and CuGaSe2 in any proportion to form CuIn 1-x Ga x Se 2 .
  • the absorber layer is mainly composed of a combination of p-type CdTe and n-type CdS.
  • Transparent conductive oxide is a thin film material with high transmittance and low resistivity in the visible light spectral range (380nm ⁇ 780nm).
  • TCO materials mainly include oxides such as CdO, In 2 O 3 , SnO 2 and ZnO and their corresponding compound multi-component compound semiconductor materials.
  • the electron transport layer and the hole transport layer are mainly for perovskite cells.
  • the electron transport layer is generally made of SnO 2 , FTO and other materials
  • the hole transport layer is generally made of nickel oxide, spiroOMeTAD° and other materials, with a thickness of tens of nanometers.
  • the thin film solar cell also includes a negative electrode layer on one side of the absorber layer for extracting electrons in the absorber layer, and the composition can be a transparent conductive oxide layer TCO or TCO and an electron transport layer.
  • the solar cell also includes a positive electrode layer on the other side of the absorber layer for extracting holes in the absorber layer, and the composition can be a transparent conductive oxide layer TCO, a conductive metal layer or a group of TCO and hole transport layers.
  • the approximate thickness of the positive electrode layer and the negative electrode layer is generally several tens of nanometers, and the positive and negative electrode layers are generally composed of metal batteries or transparent conductive oxides.
  • the thickness of the conductive glass is generally 1 to 3 mm, and the conductive layer is generally tens of nanometers to more than 200 nanometers.

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Abstract

一种薄膜太阳能电池，属于太阳能电池器件领域。负电极层(101)上开设有与导电玻璃(102)层相通的第一刻线槽(201)，第一刻线槽(201)内填充有吸收层(301)，吸收层(301)上表面开设有与负电极层(101)相通的第二刻线槽(401)，第二刻线槽(401)的底部位于第一刻线槽(201)顶部的侧边，吸收层(301)上表面设有正电极层(501)，第二刻线槽(401)内填充有正电极层(501)，正电极层(501)上开设有与吸收层(301)相通的第三刻线槽(601)，第三刻线槽(601)位于第二刻线槽(401)顶部的侧边。通过选取P2刻线的刻线角度实现了P1、P2、P3间相邻子电池电极的直接接触，有效去除了经典刻线方法中电池死区活性层正负电极的直接接触，有效避免了电池死区短路发热的问题。

Description

一种薄膜太阳能电池 技术领域
本实用新型属于太阳能电池器件领域，涉及一种薄膜太阳能电池。
背景技术
太阳能是直接利用太阳光照的清洁能源，在化石能源日益枯竭以及自然环境不断恶化的今天，世界各国愈加重视太阳能的使用，不断提高太阳能发电在整个发电系统的占比。通常以薄膜形式生产的太阳能电池大部分是在大尺寸的导电玻璃基底上制备而成，通过激光刻线工艺分离成有效尺寸的互连单体电池。激光划线的经典方法是在电池衬底上进行P1、P2、P3有一定位置规律的不同深度的激光划线来实现电池间的串联。该方法不可避免的会造成P1、P2、P3刻线间电池死区正负极直接接触，导致电池死区短路发热，会对太阳能电池的光电转换效率以及电池的稳定性造成不利影响。即经典的激光刻线工艺会造成电池死区的存在，死区电池活性层正负电极直接接触，会导致死区电池短路发热。
实用新型内容
本实用新型的目的在于克服上述现有技术中，激光刻线工艺会引起电池死区并导致死去电池短路发热缺点，提供一种薄膜太阳能电池。
为了达到上述目的，本实用新型采用以下技术方案予以实现：
一种薄膜太阳能电池，包括导电玻璃，导电玻璃上表面设有吸收层，吸收层的上下表面分别设有正电极层和负电极层；
负电极层上开设有与导电玻璃的玻璃层相通的第一刻线槽，第一刻线槽内填充有吸收层，吸收层上表面开设有与负电极层相通的第二刻线槽，第二刻线槽的底部位于第一刻线槽顶部的侧边，吸收层上表面设有正电极层，第二刻线槽内填充有正电极层，正电极层上开设有与吸收层相通的第三刻线槽，第三刻线槽位于第二刻线槽顶部的侧边。
优选地，所述第一刻线槽、第二刻线槽和第三刻线槽的宽度均为28～32μm。
优选地，所述第一刻线槽、第二刻线槽和第三刻线槽均通过纳秒激光器进行激光刻线得到。
优选地，所述负电极层为导电氧化层或电子传输层；所述的正电极层为导电氧化层或空穴传输层。
优选地，所述吸收层为钙钛矿层，所述导电玻璃为ITO玻璃或FTO玻璃。
优选地，所述吸收层的厚度为500～700nm；所述正电极层和负电极层的厚度均为300～700nm。
优选地，所述第二刻线槽底部的一端与第一刻线槽顶部的一端连接；第二刻线槽顶部的一端与第三刻线槽底部的一端连接。
与现有技术相比，本实用新型具有以下有益效果：
本实用新型公开了一种薄膜太阳能电池，负电极层上开设有与导电玻璃相通的第一刻线槽，第一刻线槽内填充有吸收层，第一吸收层上表面开设有与负电极层相通的第二刻线槽，第二刻线槽的底部位于第一刻线槽顶部的侧边，吸收层上表面设有正电极层，第二刻线槽内填充有正电极层，正电极层上开设有与吸收层相通的第三刻线槽，第三刻线槽位于第二刻线槽顶部的侧边。通过本实用新型选取P2刻线的刻线角度实现了P1、P2、P3间相邻子电池电极的直接接触，有效去除了经典刻线方法中电池死区活性层正负电极的直接接触，有效避免了电池死区短路发热的问题。
进一步地，导电玻璃选用如ITO玻璃或FTO玻璃，这些玻璃上沉积有透明导电氧化物的玻璃，能够增强制备的电池的导电性。
附图说明
图1为本实用新型薄膜太阳能电池中的导电玻璃上沉积负电极层后的电池截面结构示意图；
图2为本实用新型薄膜太阳能电池中激光P1刻线后的电池截面结构示意图；
图3为本实用新型薄膜太阳能电池中吸收层沉积后的电池截面结构示意图；
图4为本实用新型薄膜太阳能电池中激光P2刻线后的电池截面结构示意图；
图5为本实用新型薄膜太阳能电池中正电极层沉积后的电池截面结构示意图；
图6为本实用新型薄膜太阳能电池中激光P3后的电池截面结构示意图。
图7为刻线工艺中激光镜头与电池的相对位图；
其中：101-负电极层；102-导电玻璃；201-第一刻线槽；301-吸收层；401-第二刻线槽；501-正电极层；601-第三刻线槽；701-激光镜头。
具体实施方式
这为了使本技术领域的人员更好地理解本实用新型方案，下面将结合本实用新型实施例中的附图，对本实用新型实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本实用新型一部分的实施例，而不是全部的实施例。基于本实用新型中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本实用新型保护的范围。
需要说明的是，本实用新型的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换，以便这里描述的本实用新型的实施例能够以除了在这里图示或描述的那些以外的顺序实施。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含，例如，包含了一系列步骤或单元的过程、方法、系统、产品或设备不必限于清楚地列出的那些步骤或单元，而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。
下面结合附图对本实用新型做进一步详细描述：
实施例1
一种薄膜太阳能电池，包括导电玻璃102，导电玻璃102上表面设有吸收层301，吸收层301的上下表面分别设有正电极层501和负电极层101；负电极层101上开设有与导电玻璃102相通的第一刻线槽201，第一刻线槽201内填充有吸收层301，第一吸收层301上表面开设有与负电极层101相通的第二刻线槽401，第二刻线槽401的底部位于第一刻线槽201顶部的侧边，吸收层301上表面设有正电极层501，第二刻线槽401内填充有正电极层501，正电极层上开设有与吸收层301相通的第三刻线槽601，第三刻线槽601位于第二刻线槽401顶部的侧边。第二刻线槽401底部的一端与第一刻线槽201顶部的一端连接；第二刻线槽401顶部的一端与第三刻线槽601底部的一端连接。
实施例2
除以下内容外，其余内容均与实施例1相同。
第一刻线槽201、第二刻线槽401和第三刻线槽601的宽度均为28～32μm。第一刻线槽201、第二刻线槽401和第三刻线槽601均通过纳秒激光器进行激光刻线得到。第一刻线槽201和第三刻线槽601均为长方体结构，第二刻线槽401为平行六面体结构，第二刻线槽401中，竖直方向沿顺时针或逆时针倾斜30～75度。
实施例3
除以下内容外，其余内容均与实施例1相同。
负电极层101为导电氧化层或电子传输层；所述的正电极层501为导电氧化层或空穴传输层。所述吸收层301由铜铟镓硒、钙钛矿和碲化镉制备而成。所述导电玻璃102为ITO玻璃或FTO玻璃。所述吸收层301为钙钛矿层，吸收层301的厚度为500nm；所述正电极层501和负电极层101的厚度均为300nm。
实施例4
除以下内容外，其余内容均与实施例1相同。
吸收层301的厚度为650nm；所述正电极层501和负电极层101的厚度均为500nm。
实施例5
除以下内容外，其余内容均与实施例1相同。
吸收层301的厚度为700nm；所述正电极层501和负电极层101的厚度均为700nm。
实施例6
除以下内容外，其余内容均与实施例1相同。
吸收层301的厚度为510nm；所述正电极层501和负电极层101的厚度均为690nm。
实施例7
除以下内容外，其余内容均与实施例1相同。
吸收层301的厚度为505nm；所述正电极层501和负电极层101的厚度均为310nm。
实施例8
除以下内容外，其余内容均与实施例1相同。
吸收层301的厚度为690nm；所述正电极层501和负电极层101的厚度均为560nm。
上述薄膜太阳能电池的激光刻线方法，包括如下步骤：
S1：如图1所示，在导电玻璃102上沉积负电极层101，然后对负电极层101进行激光P1刻线，由负电极层101刻至导电玻璃102，在负电极层101上形成若干个将负电极层101分割的第一刻线槽201，如图2所示；激光P1刻线的同时在导电玻璃102边缘标记Mask点，用来定位后续刻线的位置；
S2：如图3所示，在负电极层101和第一刻线槽201上沉积吸收层301，然后在吸收层301上进行激光P2刻线，由吸收层301刻至负电极层101，在吸收层301上形成若干个将吸收层301分割的第二刻线槽401，如图4所示；
S3：如图5所示，在吸收层301和第二刻线槽401上沉积正电极层501，然后在正电极层501上进行激光P3刻线，由正电极层501刻至吸收层301，在正电极层501上形成若干个将正电极层501分割的第三刻线槽601，如图6所示，得到薄膜太阳能电池。
所述第二刻线槽401底部的一端与第一刻线槽201顶部的一端连接；第二刻线槽401顶部的一端与第三刻线槽601底部的一端连接。激光刻线过程中，脉冲持续时间为0.1～100纳秒；
综上所述，本实用新型的激光刻线方法，是对太阳能电池结构进行刻线以形成单片集成光伏模块，刻线将太阳能板分离成个体太阳能电池后在以刻线方式形成互联的多个太阳能电池。利用纳秒激光器即脉冲频率在纳秒范围内的激光器，采用激光器通过激光器精确的位置、角度定位，实现激光P2刻线精准倾斜处理。
需要说明的是，在激光P2刻线前需通过预估第一刻线槽201和第三刻线槽601的间距来确定第二刻线槽401的宽度，并通过测算吸收层301的厚度及第一刻线槽201、第三刻线槽601的间距来确定第二刻线槽401的倾斜角度。一般为确保P2刻线后，正电极层的金属电极有足够的沉积空间与对电极接触，第一刻线槽201和第二刻线槽401刻线的间距要控制在30-35微米间，如此所述第一刻线槽201、第二刻线槽401和第三刻线槽601的间距在百纳米级左右，前提是本实施例采用的吸收层是钙钛矿层，而该钙钛矿层的厚度在500-700纳米范围，对激光器的定位精度及稳定度提出了更高的要求。
如图7所示，激光镜头701在刻线工艺操作中所处位置。通过激光器Mask点的精准定位以及激光器倾斜角度的精确控制，P2刻线可以达到如图6所示的刻线效果。P2刻线完成后，在电池吸收层上制备电荷传输电极层，该电极层一般由沉积的金属或者电荷传输层和金属层组合而成。P3刻线的刻线位置需按照事先确定的P1、P3间距来确定。P3的刻线宽度同样在30微米左右，在保证金属电极能够被P3刻线分隔开的同时又尽量减少电池的无效面积。
需要说明的是，薄膜太阳能电池可以是钙钛矿电池、非晶硅电池、铜铟镓硒电池、碲化镉电池等中的任何一种。吸收层是将光中的光子转化成电子的层。所述的吸收层包含铜铟镓硒CIGS、钙钛矿、碲化镉等。对于钙钛矿太阳能电池，吸收层为钙钛矿层；对于非晶硅电池，吸收层基本组成成分是非晶硅化合物，又称为a-Si和无定型硅；对于铜铟镓硒电池，吸收层由铜、铟、硒等金属元素组成的直接带隙化合物半导体材料，以CIS和CuGaSe2任意比例混合形成CuIn 1-xGa xSe 2。对于碲化镉电池，吸收层主要由p型的CdTe和n型的CdS组合而成。
透明导电氧化物(TCO)是一种在可见光光谱范围(380nm＜λ＜780nm)透过率很高且电阻率较低的薄膜材料。TCO材料主要有CdO、In 2O 3、SnO 2和ZnO等氧化物及其相应的复合多元化合物半导体材料。
电子传输层和空穴传输层主要针对钙钛矿电池来讲，电子传输层一般有SnO 2、FTO等材料，空穴传输层一般有氧化镍、spiroOMeTAD°等物质，厚度在几十纳米。
薄膜太阳能电池还包括位于吸收层一侧的负电极层，用于提取吸收层中的电子，成分可以是透明导电氧化层TCO或TCO和电子传输层组成。太阳能电池还包括位于吸收层另一侧的正电极层，用于提取吸收层中的空穴，成分可以是透明导电氧化层TCO、导电金属层或TCO和空穴传输层组。
正电极层和负电极层的大致厚度一般都在几十纳米，正负电极层一般有金属电池或透明导电氧化物组成。导电玻璃厚度主要一般在1到3毫米，其中的导电层一般在几十纳米到二百多纳米。
以上内容仅为说明本实用新型的技术思想，不能以此限定本实用新型的保护范围，凡是按照本实用新型提出的技术思想，在技术方案基础上所做的任何改动，均落入本实用新型权利要求书的保护范围之内。

Claims (9)

  1. 一种薄膜太阳能电池，其特征在于，包括导电玻璃(102)，导电玻璃(102)上表面设有吸收层(301)，吸收层(301)的上下表面分别设有正电极层(501)和负电极层(101)；
    负电极层(101)上开设有与导电玻璃(102)的玻璃层相通的第一刻线槽(201)，第一刻线槽(201)内填充有吸收层(301)，第一吸收层(301)上表面开设有与负电极层(101)相通的第二刻线槽(401)，第二刻线槽(401)的底部位于第一刻线槽(201)顶部的侧边，吸收层(301)上表面设有正电极层(501)，第二刻线槽(401)内填充有正电极层(501)，正电极层上开设有与吸收层(301)相通的第三刻线槽(601)，第三刻线槽(601)位于第二刻线槽(401)顶部的侧边。
  2. 根据权利要求1所述的薄膜太阳能电池，其特征在于，所述第一刻线槽(201)、第二刻线槽(401)和第三刻线槽(601)的宽度均为28～32μm。
  3. 根据权利要求1所述的薄膜太阳能电池，其特征在于，所述第二刻线槽(401)底部的一端与第一刻线槽(201)顶部的一端连接；第二刻线槽(401)顶部的一端与第三刻线槽(601)底部的一端连接。
  4. 根据权利要求1所述的薄膜太阳能电池，其特征在于，所述负电极层(101)为导电氧化层或电子传输层。
  5. 根据权利要求1所述的薄膜太阳能电池，其特征在于，所述的正电极层(501)为导电氧化层或空穴传输层。
  6. 根据权利要求1所述的薄膜太阳能电池，其特征在于，所述导电玻璃(102)为ITO玻璃或FTO玻璃。
  7. 根据权利要求1所述的薄膜太阳能电池，其特征在于，所述吸收层(301)为钙钛矿层。
  8. 根据权利要求1所述的薄膜太阳能电池，其特征在于，所述吸收层(301)的厚度为500～700nm；所述正电极层(501)和负电极层(101)的厚度均为300～700nm。
  9. 根据权利要求1所述的薄膜太阳能电池，其特征在于，所述第一刻线槽(201)、第二刻线槽(401)和第三刻线槽(601)均通过纳秒激光器进行激光刻线得到。
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